Emitter and device including the same

Abstract

To provide an emitter capable of maintaining high reliability even during long-term operation, and a device equipped with the emitter.SOLUTION: An emitter according to the present disclosure includes first and second heaters which generate heat when current is passed through them, an electron source made of a first material which is heated by the first and second heaters and emits electrons, and intermediate members which are interposed between the first and second heaters and the electron source, respectively, and which are made of a second material having a lower thermal conductivity than the first material.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present disclosure relates to an emitter that emits electrons and a device including the same. [Background technology]

[0002] Emitters that emit electrons are used, for example, in electron microscopes and semiconductor inspection devices. The emitter includes an electron source and a heater that heats the electron source to a temperature at which the electron source emits electrons. Patent Document 1 discloses an electron source in which an electron emitting material (chip) made of a rare earth hexaboride is sandwiched between a pair of heating elements, and the heating elements are sandwiched between a pair of conductive supports. In this electron source, an insulating coating is formed on the regions of the heating elements that are not in contact with the electron emitting material and the conductive supports. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2006-12496 A Summary of the Invention [Problem to be solved by the invention]

[0004] When the chip of the electron source disclosed in Patent Document 1 was actually operated for a long time, deposition of hexaboride was observed in the vicinity of the contact with the conductive support of the heater. It is presumed that the hexaboride evaporated from the chip cannot be re-evaporated and is deposited in this region because the temperature of the vicinity of the contact with the conductive support of the heater drops due to heat conduction to the conductive support (see FIG. 5(b)). FIG. 5(b) is a vertical cross-sectional view showing a state in which the material constituting the electron source 11 is deposited in the vicinity of the heaters 15a and 15b. Deposition material D is attached to cover the upper surfaces of the conductive supports 17a and 17b and, continuously thereto, a part of the upper surfaces of the heaters 15a and 15b. The arrows in FIG. 5(a) and FIG. 5(b) indicate the current when electricity is applied. When deposition material D is not attached, electricity flows stably to the heaters 15a and 15b as shown in FIG. 5(a). In contrast, when deposition material D adheres as shown in Fig. 5(b), deposition material D inhibits a stable flow of electricity in heaters 15a and 15b. In the invention described in Patent Document 1, an insulating coating is formed on a predetermined region of the heating element to suppress a decrease in reliability caused by deposition of hexaboride.

[0005] The present disclosure provides an emitter that can maintain high reliability even during long-term operation, and a device including the emitter. [Means for solving the problem]

[0006] One aspect of the present disclosure provides an emitter, the emitter including first and second heaters which generate heat when energized, an electron source made of a first material which is heated by the first and second heaters and emits electrons, and intermediate members which are interposed between the first and second heaters and the electron source, respectively, and made of a second material having a thermal conductivity lower than that of the first material.

[0007] In the emitter according to the present disclosure, an intermediate member (second material) having a lower thermal conductivity than the electron source (first material) is provided between the electron source and the heater. This configuration allows the heater to be operated at a higher temperature than when no intermediate member is provided. This makes it possible to suppress the material constituting the electron source from being evaporated in the vicinity of the heater, thereby suppressing the resulting deterioration in the performance of the emitter. Therefore, the emitter according to the present disclosure can operate stably for a long period of time. The thermal conductivity of the intermediate member is preferably 100 W / m·K or less. The thermal conductivity in the present disclosure means a value at 20°C measured in accordance with the method described in JIS R1611.

[0008] The emitter according to the present disclosure is based on the concept of preventing efficient heating of the electron source by the heater to some extent, while suppressing deposition of the material constituting the electron source near the heater (for example, a pair of conductive posts that sandwich the heater) using excess heat from the heater. To effectively achieve this, it is preferable that the intermediate member has a certain volume and is disposed between the electron source and the heater. In other words, it is preferable that the length of the shortest path of the intermediate member taken from the heater to the electron source is 100 μm or more.

[0009] The electrical resistivity of the intermediate member is preferably sufficiently smaller than that of the heater. The electrical resistivity of the intermediate member is preferably 300 μΩ·m or less. When this value is 300 μΩ·m or less, excessive heating of the intermediate member due to energization can be suppressed. The electrical resistivity of the heater is preferably 500 μΩ·m or more. When this value is 500 μΩ·m or more, the heater can be made to generate sufficient heat when energized. The electrical resistivity in this disclosure means a value at 20°C measured in accordance with the method described in JIS R7222.

[0010] It is preferable that the intermediate member covers the surfaces of the electron source other than the electron emission surface. By covering the surfaces of the electron source other than the electron emission surface with the intermediate member, the intermediate member can trap the evaporant of the electron source when current is applied. That is, it is possible to suppress at least the evaporant of the material of the electron source from diffusing in the direction of the heater. Therefore, it is possible to further suppress the deterioration of the performance of the emitter caused by the evaporation of the material constituting the electron source.

[0011] One aspect of the present disclosure provides an apparatus including the emitter. Examples of the apparatus including the emitter include an electron microscope, a semiconductor manufacturing apparatus, an inspection apparatus, and a processing apparatus. Effect of the Invention

[0012] According to the present disclosure, there is provided an emitter capable of maintaining high reliability even during long-term operation, and a device including the emitter. [Brief description of the drawings]

[0013] [Figure 1] FIG. 1(a) is a longitudinal sectional view diagrammatically illustrating a first embodiment of an emitter according to the present disclosure, and FIG. 1(b) is a transverse sectional view of the emitter shown in FIG. 1(a). [Diagram 2] FIG. 2(a) is a longitudinal sectional view diagrammatically illustrating a second embodiment of an emitter according to the present disclosure, and FIG. 2(b) is a transverse sectional view of the emitter shown in FIG. 2(a). [Diagram 3] FIG. 3(a) is a vertical cross-sectional view illustrating a schematic diagram of a third embodiment of an emitter according to the present disclosure, and FIG. 3(b) is a top view of the emitter illustrated in FIG. 3(a). [Figure 4] FIG. 4 is a thermographic camera image showing the top surface temperature of the emitter according to the embodiment. [Diagram 5] FIG. 5(a) is a vertical cross-sectional view showing a schematic diagram of an emitter according to a comparative example, and FIG. 5(b) is a vertical cross-sectional view showing a schematic diagram of a state in which a material constituting an electron source (lanthanum boride) is evaporated near the heater of the emitter shown in FIG. 5(a). DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0014] Hereinafter, an embodiment of the present disclosure will be described with reference to the drawings. In the following description, the same elements or elements having the same functions will be designated by the same reference numerals, and duplicated descriptions will be omitted. Note that the present invention is not limited to the following embodiment.

[0015] First Embodiment FIG. 1(a) is a vertical cross-sectional view showing an emitter according to the first embodiment, and FIG. 1(b) is a horizontal cross-sectional view of the emitter shown in FIG. 1(a). The emitter 10 shown in these figures includes an electron source 1, a pair of heaters 5a, 5b (first and second heaters) that generate heat when energized, intermediate members 2a, 2b arranged between the electron source 1 and the heaters 5a, 5b, and a pair of conductive posts 7a, 7b arranged to sandwich these components. The electron source 1 is made of a material (first material) that emits electrons when heated. The intermediate members 2a, 2b are made of a material (second material) that has a lower thermal conductivity than the material constituting the electron source 1. The heaters 5a, 5b are for heating the electron source 1. The pair of conductive posts 7a, 7b are for holding the electron source 1 and the like and for energizing the heaters 5a, 5b. Examples of devices that include the emitter 10 include electron microscopes, semiconductor manufacturing devices, inspection devices, and processing devices. Each component of the emitter 10 will be described below.

[0016] (electron source) The electron source 1 is made of a first material (electron emission material) having electron emission properties. The tip 1a of the electron source 1 is formed into a cone shape, and electrons are emitted from the tip 1a. In this embodiment, the electron source 1 is exposed on each of the side surfaces 10a and 10b of the emitter 10.

[0017] In this embodiment, the shape of the electron source 1 other than the tip 1a is a quadrangular prism (see Figs. 1(a) and 1(b)). The length of the electron source 1 is, for example, 0.1 to 2 mm, and may be 0.2 to 1.5 mm or 0.2 to 1 mm. A length of 0.1 mm or more tends to improve handling, and a length of 2 mm or less tends to provide uniform heating. The cross-sectional shape of the quadrangular prism part of the electron source 1 is approximately square. The length of the side is, for example, 0.02 to 1 mm, and may be 0.05 to 0.5 mm or 0.05 to 0.15 mm.

[0018] Examples of electron emitting materials include rare earth borides such as lanthanum boride (LaB6) and cerium boride (CeB6); high melting point metals such as tungsten, tantalum, and hafnium, as well as their oxides, carbides, and nitrides; and precious metal-rare earth alloys such as iridium cerium.

[0019] From the viewpoints of electron emission characteristics, strength, and workability, the electron emission material constituting the electron source 1 is preferably a rare earth boride. When the electron source 1 is made of a rare earth boride, the electron source 1 is likely to emit electrons. <100> It is preferable that the electron source 1 is a single crystal processed so that its orientation coincides with the electron emission direction. The electron source 1 can be formed into a desired shape by electric discharge machining or the like. The side surface of the electron source 1 is preferably a (100) crystal plane, since it is believed that this slows down the evaporation rate.

[0020] The material constituting the electron source 1 has a higher thermal conductivity than the material constituting the intermediate members 2a and 2b. The thermal conductivity of the material constituting the electron source 1 is preferably 5 W / m·K or more, and more preferably 10 W / m·K or more. When the thermal conductivity of this material is 5 W / m·K or more, the entire electron source 1 tends to be heated sufficiently uniformly by the heat from the heaters 5a and 5b. The upper limit of the thermal conductivity of this material is, for example, 200 W / m·K. The thermal conductivities of several materials are shown below. Lanthanum boride (LaB6): 60W / m K Tungsten: 177W / mK

[0021] Thermal conductivity value T of electron source 1 E is the thermal conductivity value T of the intermediate members 2a and 2b. I It is preferable that the thermal conductivity value T I The thermal conductivity value T of electron source 1 E The ratio (T E / T I ) is, for example, 7 to 13, and may be 8 to 12 or 10 to 11. When this ratio is within these ranges, the temperature of the heaters 5a and 5b during energization can be appropriately increased. The temperature of the heaters 5a and 5b during energization can be, for example, 150 to 250° C. higher than the temperature of the electron source 1. This can prevent the material constituting the electron source 1 from being evaporated in the vicinity of the heaters 5a and 5b.

[0022] (Intermediate parts) The intermediate members 2a and 2b are disposed so as to contact a pair of surfaces 1b and 1c of the electron source 1 and cover these surfaces (see FIG. 1(b)). The intermediate members 2a and 2b are exposed to the side surfaces 10a and 10b of the emitter 10, respectively. It is preferable that the length of the shortest path of the intermediate member taken from the heater toward the electron source is 100 μm or more. That is, in this embodiment, the thickness of the intermediate member 2a (the distance between the electron source 1 and the heater 5a) is preferably 100 μm or more, and may be 100 to 1000 μm or 300 to 800 μm.

[0023] The intermediate members 2a and 2b are made of a material (second material) having a lower thermal conductivity than the material constituting the electron source 1. The thermal conductivity of the material constituting the intermediate members 2a and 2b is, for example, 100 W / m·K or less, preferably 1 to 100 W / m·K, and more preferably 1 to 60 W / m·K. The lower limit of this value may be 2 W / m·K or 3 W / m·K. The upper limit of this value may be 45 W / m·K or 40 W / m·K. When the thermal conductivity of this material is 1 W / m·K or more, heat from the heaters 5a and 5b tends to be sufficiently transmitted to the electron source 1, while when the thermal conductivity is 100 W / m·K or less, a sufficient temperature difference tends to be generated between the heaters 5a and 5b and the electron source 1.

[0024] The material constituting the intermediate members 2a and 2b preferably contains a high melting point metal or its carbide, and preferably contains at least one of metallic tantalum, metallic titanium, metallic zirconium, metallic tungsten, metallic molybdenum, metallic rhenium, tantalum carbide, titanium carbide, and zirconium carbide. This material may also contain at least one of boron carbide and graphite (carbon material), or at least one of niobium, hafnium, and vanadium. As this material, glassy carbon (for example, Glassy Carbon (product name, manufactured by Rayho Manufacturing Co., Ltd.)) may be used. As this material, boron nitride may be used. The thermal conductivity of several materials is shown below. Metallic rhenium: 48W / mK Boron carbide: 35W / m K Graphite: 80~250W / mK Glassy carbon: 5.8 W / m K

[0025] The material constituting the intermediate members 2a, 2b is conductive. From the viewpoint of suppressing excessive heat generation of the intermediate members 2a, 2b due to energization, it is preferable that the material constituting the intermediate members 2a, 2b has a lower electrical resistivity than the material constituting the heaters 5a, 5b. The electrical resistivity of the material constituting the intermediate members 2a, 2b is preferably 300 μΩ·m or less, more preferably 100 μΩ·m or less. When the electrical resistivity of this material is 300 μΩ·m or less, it tends to be possible to suppress excessive heat generation of the intermediate members 2a, 2b due to energization. The lower limit of the electrical resistivity of this material is, for example, 0.1 μΩ·m, and may be 0.3 μΩ·m or 1.0 μΩ·m. The electrical resistivities of several materials are shown below. Metallic rhenium: 0.2μΩ·m Graphite: 5~15μΩ·m Glassy carbon: 42μΩ·m

[0026] (Heater) The heaters 5a and 5b are made of a material having high electrical resistivity and generate heat when electricity is applied. The electrical resistivity of the material constituting the heaters 5a and 5b is preferably 500 to 1000 μΩ·m, more preferably 600 to 900 μΩ·m. When the electrical resistivity of this material is 500 μΩ·m or more, the electron source 1 tends to be sufficiently heated when electricity is applied, while when the electrical resistivity is 1000 μΩ·m or less, electricity tends to be sufficiently applied. Examples of materials constituting the heaters 5a and 5b include pyrolytic graphite and hot-pressed carbon. The electrical resistivity (representative value) of pyrolytic graphite is 800 μΩ·m.

[0027] The electrical resistivity value R of the heaters 5a and 5b H is the electrical resistivity value R of the intermediate members 2a and 2b. I The electrical resistivity value R of the intermediate members 2a and 2b is preferably sufficiently larger than I The electrical resistivity value R of the heaters 5a and 5b H Ratio (R H / R I) is, for example, 12 to 20, and may be 13 to 19 or 14 to 18. When this ratio is 12 or more, the temperature of the heaters 5a and 5b during energization can be sufficiently increased, and deposition of the material constituting the electron source 1 in the vicinity of the heaters 5a and 5b tends to be suppressed. On the other hand, when this ratio is 20 or less, loss of power for heating the heaters 5a and 5b tends to be reduced.

[0028] Second Embodiment FIG. 2(a) is a vertical cross-sectional view showing a schematic diagram of an emitter according to the second embodiment, and FIG. 2(b) is a horizontal cross-sectional view of the emitter shown in FIG. 2(a). The emitter 20 shown in these figures is different from the emitter 10 according to the first embodiment in that the four side surfaces of the columnar part of the electron source 1 are covered with an intermediate member 2. That is, in the first embodiment, the intermediate member 2a is interposed between the electron source 1 and the heater 5a, and the intermediate member 2b is interposed between the electron source 1 and the heater 5b, whereas in this embodiment, the intermediate member 2 is interposed between the electron source 1 and the heaters 5a and 5b. By covering the four side surfaces of the columnar part of the electron source 1 with the intermediate member 2, the diffusion of the evaporated matter of the electron source can be suppressed, and the electron source can be heated uniformly. The material of the intermediate member 2 may be the same as the material of the intermediate members 2a and 2b according to the first embodiment.

[0029] <Third embodiment> Fig. 3(a) is a vertical cross-sectional view showing a schematic diagram of an emitter according to a third embodiment, and Fig. 3(b) is a horizontal cross-sectional view of the emitter shown in Fig. 3(a). In the emitter 30 shown in these figures, an intermediate member 3 is composed of a columnar portion 3a and a conical portion 3b. An opening 4 is provided at the tip of the conical portion 3b, and the electron source 1 is inserted into the opening 4. The surface at the tip of the electron source 1 is the electron emission surface 1f. The material of the intermediate member 3 may be the same as that of the intermediate members 2a and 2b according to the first embodiment.

[0030] In this embodiment, the shape of the electron source 1 is a quadrangular prism (see Figs. 3(a) and 3(b)). The length of the electron source 1 is, for example, 0.1 to 1 mm, and may be 0.2 to 0.6 mm or 0.3 mm. A length of 0.1 mm or more tends to improve handling, and a length of 1 mm or less tends to reduce the likelihood of cracks or the like. The cross-sectional shape of the electron source 1 is approximately square. The length of a side is, for example, 20 to 300 µm, and may be 50 to 150 µm, or 100 µm.

[0031] In this embodiment, the shape of the columnar portion 3a of the intermediate member 3 is a quadrangular columnar shape (see Figs. 3(a) and 3(b)). The cross-sectional shape of the columnar portion 3a is approximately square. The length of each side is, for example, 0.5 to 2 mm, and may be 0.6 to 1 mm, or 0.7 to 0.9 mm.

[0032] The surfaces of the electron source 1 other than the electron emission surface are covered with the intermediate member 3, so that the emission of electrons from surfaces other than the electron emission surface is suppressed. The tip of the electron source 1 may or may not protrude from the tip of the cone-shaped portion 3b of the intermediate member 3, but it is preferable that it does not protrude. Since the tip of the electron source 1 does not protrude from the intermediate member 3, the emission of unnecessary electrons, that is, the emission of electrons to the side, can be sufficiently suppressed. For example, in order to obtain a larger current of electrons, the tip of the electron source 1 is heated to a high temperature of about 1550°C and a high electric field of several kV is applied to the electron source 1. When such a high electric field is applied, excess electrons may be generated from other parts of the electron source than the tip. These excess electrons may reduce the brightness of the electron beam from the tip due to the space charge effect, or may cause unnecessary heating of the surrounding electrode parts. To prevent this, only the tip surface of the electron source 1 is exposed and the other surfaces are covered with the intermediate member 3, so that only a high-brightness electron beam from the tip can be obtained. The tip of the electron source 1 may be recessed with respect to the tip of the conical portion 3 b of the intermediate member 3 .

[0033] By covering the entire side surface of the electron source 1 with the intermediate member 3, it is possible to suppress the occurrence of a phenomenon called micro-discharge. That is, in thermionic emission, electrons are emitted by heating the electron source to a high temperature. When the electron-emitting material evaporates, it adheres to the surrounding electrode parts and becomes fibrous crystals called whiskers. When electric charges accumulate in these whiskers, micro-discharge is caused. Micro-discharge makes the electron beam unstable and reduces the performance of the device. By covering the entire side surface of the electron source 1 with the intermediate member 3, the sublimated electron-emitting material is trapped in the intermediate member 3, reducing the amount of adhesion to the surrounding electrode parts and making it difficult for micro-discharge to occur. Note that the intermediate member 3 does not have a gap in a part of the circumference, but covers the entire side surface of the electron source 1. Since the intermediate member 3 does not have a gap, it is possible to sufficiently suppress the emission of electrons to the side.

[0034] Although the embodiments of the present disclosure have been described in detail above, the present invention is not limited to the above embodiments. For example, in the above embodiments, an electron source having a columnar portion with a cross-sectional shape of approximately square has been exemplified, but the cross-sectional shape of the columnar portion may be an approximately polygonal shape other than an approximately square, for example, an approximately rectangular shape, an approximately rhombus shape, an approximately parallelogram shape, an approximately triangular shape (for example, an approximately equilateral triangle), or an approximately regular hexagon. The cross-sectional shape of the opening 4 in the third embodiment does not need to match the cross-sectional shape of the electron source, and may be, for example, an approximately circular shape, an approximately rhombus shape, an approximately parallelogram shape, an approximately triangular shape (for example, an approximately equilateral triangle), or an approximately regular hexagon. EXAMPLES

[0035] The present disclosure will be described below based on examples and comparative examples. Note that the present invention is not limited to the following examples.

[0036] (Example) An emitter with the same configuration as the emitter shown in Figure 1 was fabricated using the materials shown in Table 1. The length of the electron source was approximately 0.3 mm, and the length of one side of the columnar part was approximately 100 μm. The thickness of the intermediate member (the distance between the electron source and the heater) was 300 μm.

[0037] [Table 1]

[0038] When electricity was applied to the emitter under constant current control so that the temperature of the electron source became 1550°C, the temperature of the heater was 1768°C. Fig. 4 is a thermography camera image showing the upper surface temperature of the emitter according to the embodiment. According to the study by the present inventors, from the viewpoint of preventing deposition of lanthanum boride, when the electron source is heated to 1550°C, the temperature of the heater is preferably 1700 to 1800°C.

[0039] (Comparative Example) An emitter was fabricated with the same configuration as in the example except that no intermediate member was placed between the electron source and the heater (see FIG. 5(a)). When electricity was passed through the emitter under constant current control so that the temperature of the electron source was 1550°C, the temperature of the heater was 1634°C. [Industrial Applicability]

[0040] According to the present disclosure, there is provided an emitter capable of maintaining high reliability even during long-term operation, and a device including the emitter. [Explanation of symbols]

[0041] 1...electron source, 1f...electron emission surface, 2, 2a, 2b, 3...intermediate member, 5a, 5b...heater, 10, 20, 30...emitter.

Claims

1. First and second heaters that generate heat when energized; an electron source made of a first material that emits electrons when heated by the first and second heaters; an intermediate member interposed between the first heater and the electron source, and between the second heater and the electron source, the intermediate member being made of a second material having a thermal conductivity lower than that of the first material; An emitter comprising:

2. 2. The emitter according to claim 1, wherein a length of the shortest path taken by the intermediate member when traveling from the heater to the electron source is 100 μm or more.

3. The intermediate member has an electrical resistivity of 300 μΩ·m or less, 3. The emitter according to claim 1 or 2, wherein the heater has an electrical resistivity value of 500 μΩ·m or more.

4. An emitter according to any one of claims 1 to 3, wherein the second material is at least one material selected from carbon, boron carbide, boron nitride and rhenium.

5. An emitter according to any one of claims 1 to 3, wherein the second material is glassy carbon.

6. 6. The emitter according to claim 1, wherein the first material is a material selected from the group consisting of rare earth borides, refractory metals and their oxides, carbides and nitrides, and noble metal-rare earth alloys.

7. 7. The emitter according to claim 1, wherein the intermediate member covers a surface of the electron source other than the electron emission surface.

8. A device comprising an emitter according to any one of claims 1 to 7.

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