Semiconductor device

Abstract

To improve the position accuracy of control lead frames in a semiconductor device.SOLUTION: A semiconductor device (1) comprises: a semiconductor chip (11); a main current lead frame (37) having a main die pad (37a) where the semiconductor chip (11) is disposed; a control element (21) connected to the semiconductor chip (11) via a first control wire (W1); and a control lead frame (40) having a control die pad (41a) where the control element (21) is disposed. The control lead frame (40) includes a first frame (41) having the control die pad (41a) and a second frame (42) connected to the control element (21) via a second control wire (W2). The first frame (41) further includes bent sections (41c, 41d, 41e) which are bent so that the control die pad (41a) is located downward of the second frame (42) in the thickness direction (Z direction) of the semiconductor chip (11).SELECTED DRAWING: Figure 3

Description

[Technical field]

[0001] The present invention relates to a semiconductor device comprising a main current lead frame having a main die pad on which a semiconductor chip is arranged, and a control lead frame having a control die pad on which a control element is arranged. [Background technology]

[0002] As a semiconductor device used in a power conversion device, there is a semiconductor device in which a control die pad of a control lead frame on which a control element is arranged is located above a main die pad of a main current lead frame on which a semiconductor chip is arranged. In such a semiconductor device, the semiconductor chip, the control element, the lead frame, etc. are connected to each other by wiring and sealed with a sealing resin (for example, see Patent Documents 1 to 5). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2014-99547 A [Patent Document 2] JP 2016-129257 A [Patent Document 3] JP 2019-87565 A [Patent Document 4] JP 2008-186889 A [Patent Document 5] JP 2000-196002 A Summary of the Invention [Problem to be solved by the invention]

[0004] In order to suppress deformation of the control wiring during resin molding by reducing the difference in height between the control die pad and the main die pad, the control lead frame may be provided with a bent portion that makes the height of the control die pad lower than the portion extending from the sealing resin. However, since the width of each of the separated frames of the control lead frame is narrow, bending the control lead frame deteriorates the positional accuracy of each frame.

[0005] An object of the present invention is to provide a semiconductor device capable of improving the positional accuracy of a control lead frame. [Means for solving the problem]

[0006] A semiconductor device in one embodiment comprises a semiconductor chip, a main current lead frame having a main die pad on which the semiconductor chip is arranged, a control element connected to the semiconductor chip via a first control wiring, and a control lead frame having a control die pad on which the control element is arranged, the control lead frame having a first frame having the control die pad and a second frame connected to the control element via a second control wiring, and the first frame further has a bent portion bent so that the control die pad is positioned lower than the second frame in the thickness direction of the semiconductor chip. Effect of the Invention

[0007] According to the above aspect, the positional accuracy of the control lead frame can be improved. [Brief description of the drawings]

[0008] [Figure 1] 1 is a plan view showing a semiconductor device according to an embodiment; [Diagram 2] 1 is a right side view showing an internal structure of a semiconductor device according to an embodiment; [Diagram 3] FIG. 2 is a cross-sectional view taken along line III-III of FIG. [Figure 4]FIG. 4 is a plan view for explaining a flow rate (s / L) corresponding to a loop height of a first control wiring in one embodiment. [Diagram 5] 1 is a graph showing the relationship between the loop height and the flow rate (deformation rate) of a control wiring in one embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] Hereinafter, a semiconductor device according to an embodiment of the present invention will be described in detail with reference to the drawings. Note that the X, Y, and Z axes in each of the drawings are shown for the purpose of defining the directions in the semiconductor device 1 shown as an example. The X, Y, and Z axes are mutually orthogonal and form a right-handed system. In the following description, the Z direction, which is the thickness direction of the semiconductor chips 11 to 14, is the up-down direction. These directions are terms used for convenience of description, and the corresponding relationship with each of the X, Y, and Z directions may change depending on the mounting posture of the semiconductor device 1, etc. For example, in this specification, the surface facing the positive side of the Z direction (+Z direction) of the members constituting the semiconductor device 1 is called the top surface, the surface facing the negative side of the Z direction (-Z direction) is called the bottom surface, the surface facing the negative side of the Y direction (-Y direction) is called the front surface, and the four surfaces facing both sides of the X direction and both sides of the Y direction including the front surface are called side surfaces. In addition, in this specification, a plan view means a case where the top surface of the semiconductor device 1 is viewed from the negative side of the Z direction.

[0010] In addition, the aspect ratios and the size relationships between the components in each drawing are merely schematic and do not necessarily correspond to the relationships in the actually manufactured semiconductor device 1, etc. Also, the shapes of the same components may differ between different drawings.

[0011] In the following description, a device applied to a power conversion device such as an inverter device for an industrial or vehicle-mounted motor will be given as an example of the semiconductor device 1 according to the present embodiment. Therefore, in the following description, detailed descriptions of configurations, functions, operations, assembly methods, etc. that are the same as or similar to those of known semiconductor devices will be omitted.

[0012] Fig. 1 is a plan view showing the semiconductor device 1. Fig. 2 is a right side view showing the internal structure of the semiconductor device 1. Fig. 3 is a cross-sectional view taken along line III-III in Fig. 1. In Fig. 1, the sealing resin 60 is indicated by a two-dot chain line (imaginary line).

[0013] 1, the semiconductor device 1 includes a plurality of semiconductor chips 11-14, a plurality of control elements 21, 22, a main current lead frame 30, a control lead frame 40, a plurality of electronic components 51-53, a sealing resin 60, and an insulating sheet 70. The semiconductor device 1 also includes a plurality of first control wiring W1, second control wiring W2, third control wiring W3, and main current wiring W4.

[0014] The semiconductor chips 11 to 14 are each composed of, for example, an RC (Reverse Conducting)-IGBT element that integrates an IGBT (Insulated Gate Bipolar Transistor) element, which is a switching element, and a diode element such as an FWD (Free Wheeling Diode) element connected in reverse parallel to the switching element. Instead of each of the semiconductor chips 11 to 14, a semiconductor chip having a switching element and a semiconductor chip having a diode element may be provided separately.

[0015] A first main electrode (not shown) is provided on the lower surfaces of the semiconductor chips 11 to 14. A second main electrode and a control electrode (gate electrode) (not shown) are provided on the upper surfaces of the semiconductor chips 11 to 14. When the switching elements of the semiconductor chips 11 to 14 are IGBT elements, the first main electrode on the lower surface is called a collector electrode, and the second main electrode on the upper surface is called an emitter electrode.

[0016] The semiconductor chips 11-14 are arranged in a line in the X direction, for example, six pieces, each consisting of three semiconductor chips 11 and semiconductor chips 12-14. All three semiconductor chips 11 constituting the upper arm are arranged on a single main die pad 37a of a main current lead frame 37 described later. The three semiconductor chips 12-14 constituting the lower arm are arranged on main die pads 34a, 35a, 36a of different main current lead frames 34-36. The first main electrodes on the lower surfaces of the semiconductor chips 11-14 may be joined to the main die pads 34a, 35a, 36a, 37a by a conductive bonding material such as solder.

[0017] The second main electrodes and control electrodes on the upper surfaces of the three semiconductor chips 11 constituting the upper arm are connected to a common control element 21 via first control wiring W1. The three semiconductor chips 11 are also connected on their upper surfaces via main current wiring W4 to main current lead frames 34-36 that are different from the main current lead frame 37 having the main die pad 37a on which these semiconductor chips 11 are arranged. Note that connection in this specification includes electrical connection, and therefore includes indirect joining (fixing) via other members in addition to direct joining (fixing).

[0018] The control electrodes on the upper surfaces of the semiconductor chips 12-14 constituting the lower arm are connected via a first control wiring W1 to a common control element 22. In addition, the semiconductor chips 12-14 are connected on their upper surfaces to main current lead frames 31-33 via main current wiring W4.

[0019] The control element 21 is, for example, a High Voltage Integrated Circuit (HVIC), and the control element 22 is, for example, a Low Voltage Integrated Circuit (LVIC). It is desirable that the control elements 21 and 22 have a sensor function for detecting environmental information such as temperature, and a protection circuit function for operating based on the detection result of the environmental information.

[0020] The control elements 21 and 22 are arranged side by side in the X direction on control die pads 41a and 41b provided on a single first frame 41 of the control lead frame 40. The lower surfaces of the control elements 21 and 22 may be joined to the control die pads 41a and 41b by a conductive joining material such as solder.

[0021] As described above, the control element 21 is connected to the three semiconductor chips 11 via two first control wirings W1, and the control element 22 is connected to the semiconductor chips 12 to 14 via one first control wiring W1. As an example, the control element 21 has an upper surface electrode connected to the component die pads 43a of the seven second frames 42 and three third frames 43 of the control lead frame 40 via the second control wiring W2. The control element 22 has an upper surface electrode connected to the seven second frames 42 via the second control wiring W2.

[0022] The main current lead frame 30 has seven frames (referred to individually as main current lead frames 31-37). The main current lead frames 31-37 function as output circuit sections. The main current lead frames 31-37 are arranged in the X direction in the order of the symbols 31-37, from the main current lead frame 31 located most negative in the X direction to the main current lead frame 37 located most positive in the X direction.

[0023] The main current lead frames 34-37 having the main die pads 34a, 35a, 36a, 37a extend from the main die pads 34a-37a in the negative Y direction (an example of a first direction) away from the control die pads 41a, 41b, thereby extending from the sealing resin 60 and functioning as main current terminals. Note that the main current lead frames 34-37 extend from the main die pads 34a-37a in the negative Y direction while bending toward the positive X direction, but in this case too, they can be said to extend in the negative Y direction. The main current lead frames 31-33 also extend in the negative Y direction and extend from the sealing resin 60, functioning as main current terminals.

[0024] As shown in FIG. 2, the main current lead frames 34 to 37 (only the main current lead frame 37 is shown in FIG. 2) have bent portions 34b, 35b, 36b, and 37b that are bent downward in the Z direction (the thickness direction of the semiconductor chip 11) so that the main die pads 34a to 37a contact the upper surface of the insulating sheet 70 described later.

[0025] As described above, the control lead frame 40 shown in FIG. 1 has a first frame 41, a plurality of second frames 42, and three third frames 43. Each of the frames 41 to 43 functions as a control circuit section. The first frame 41 has control die pads 41a and 41b positioned at a distance from each other in the X direction, and extends on both sides in the X direction away from the control die pads 41a and 41b, and then extends to the positive side in the Y direction (an example of a second direction opposite to the first direction) away from the main die pads 34a to 37a. The three third frames 43 have component die pads 43a on which electronic components 51, 52, and 53 are arranged.

[0026] The first frame 41 has three bent portions 41c, 41d, and 41e that are bent so that the control die pads 41a and 41b are located lower in the Z direction than the second frame 42 and the third frame 43 (component die pad 43a). The two bent portions 41c and 41d are provided on both sides in the X direction (one example of a third direction side and a fourth direction side that are perpendicular to the first direction and the second direction and opposite to each other) of the control die pads 41a and 41b of the first frame 41. The control die pads 41a and 41b are located at the same height in the Z direction by being sandwiched between the bent portions 41c and 41d. Note that even in this case, the bent portions 41c and 41d may be positioned shifted toward the positive side in the Y direction from the control die pads 41a and 41b. The bent portion 41e is provided on the positive side in the Y direction from the control die pads 41a and 41b. The height at which the bent portions 41c, 41d, 41e make the control die pads 41a, 41b lower than the portion of the first frame 41 extending from the sealing resin 60 may be equal to or smaller than the plate thickness of the first frame 41.

[0027] The control lead frame 40 (all of the first frame 41, second frame 42, and third frame 43) extends from the sealing resin 60 in the positive Y direction and functions as a control terminal. As shown in Fig. 2, with the lower surface of the sealing resin 60 as a reference, a height H2 at which the control lead frame 40 extends from the sealing resin 60 is desirably the same height in the Z direction as a height H1 at which the main current lead frame 30 (main current lead frames 31 to 37) extends from the sealing resin 60. Note that even if the same height is intended, the height may vary slightly due to the influence of tolerances, etc., so it can be said that the heights are the same even if there is a difference between the heights H1 and H2 of about the thickness of the main current lead frame 30 or the control lead frame 40, for example.

[0028] The main current lead frame 30 and the control lead frame 40 are formed, for example, by processing a single metal flat plate having a wiring pattern, such as etching or punching. The main current lead frame 30 and the control lead frame 40 are preferably made of a metal material such as copper, a copper alloy, an aluminum alloy, or an iron alloy.

[0029] The bent portions 34b to 37b of the main current lead frame 30 and the bent portions 41c to 41e of the control lead frame 40 are formed by, for example, press working. Note that these bent portions 34b to 37b and the bent portions 41c to 41e may be curved without being angular as long as they are bent by changing the extending direction.

[0030] The electronic components 51 to 53 are, for example, bootstrap diodes. The electronic components 51 to 53 may be other components such as passive elements, such as thermistors, capacitors, and resistors. The electronic components 51 to 53 may be bonded to the component die pads 43a of the third frame 43 with a conductive bonding material, such as solder. The electronic components 51 to 53 are connected to the second frame 42 via third control wiring W3.

[0031] The sealing resin 60 has a rectangular parallelepiped shape that is longer in the X and Y directions than in the Z direction, and seals the semiconductor chips 11-14, the control elements 21 and 22, the electronic components 51-53, the first to third control wirings W1-W3, the main current wiring W4, and the like. As shown in FIG. 1, recesses 61 that are U-shaped (semicircular) in plan view are provided on the side surface of the sealing resin 60 on the positive side in the X direction and the side surface on the negative side in the X direction. These recesses 61 can be called grooves that penetrate the sealing resin 60 in the Z direction. For example, the recesses 61 are used to insert bolts that attach the semiconductor device 1 to a cooler such as a cooling fin that is disposed under the semiconductor device 1. The sealing resin 60 is, for example, a thermosetting resin such as an epoxy resin, and is preferably molded by transfer molding.

[0032] As described above, the main current lead frame 30 extends from the sealing resin 60 on the negative side in the Y direction, and the control lead frame 40 extends on the positive side in the Y direction. The sealing resin 60 is injected from an injection gate into a space between upper and lower molds (not shown) at the same height in the Z direction as the height at which the main current lead frames 31 to 37 extend. As shown by the arrows in FIG. 1 indicating the resin injection direction D, the sealing resin 60 is injected from six places between the main current lead frames 31 to 37. That is, the sealing resin 60 is injected from the side surface (front surface) from which the main current lead frames 31 to 37 extend. This side surface is the negative surface of the sealing resin 60 in the Y direction, but it does not have to be a single plane, and may be a multiple plane surface or a curved surface.

[0033] The injected portion of the sealing resin 60 can be identified as the injected portion by, for example, cutting the injected sealing resin 60 after it has hardened. The semiconductor device 1 may be inserted into the mold with the exception of the sealing resin 60, and the main current lead frame 30 and the control lead frame 40 may extend from the sealing resin 60. That is, before the sealing resin 60 is injected (before insertion into the mold), the semiconductor chips 11-14, the control elements 21, 22, and the electronic components 51-53 may be arranged on the main current lead frame 30 or the control lead frame 40, the first to third control wirings W1-W3 and the main current wiring W4 may be wired, and the insulating sheet 70 may be attached to the lower surfaces of the main die pads 34a-37a of the main current lead frames 34-37. The insulating sheet 70 may be in a semi-hardened state before the injection of the sealing resin 60, and may be thermally hardened together with the sealing resin 60 to be attached to the lower surfaces of the main die pads 34a-37a.

[0034] 2, the insulating sheet 70 has a lower surface that is flush with the lower surface of the sealing resin 60, and the lower surface is exposed to the outside of the sealing resin 60. The insulating sheet 70 may be formed, for example, in a rectangular shape in a plan view that is larger in both the X direction and the Y direction than the four main die pads 34a-37a to be attached. Note that the control die pad 41a (control lead frame 40) is located above the main die pads 34a-37a in the Z direction, and therefore the insulating sheet 70 does not contact the control lead frame 40.

[0035] The insulating sheet 70 is preferably formed from a material that not only provides insulation for the main die pads 34a-37a but also has excellent heat dissipation properties in order to conduct heat generated from the semiconductor chips 11-14 to a cooler disposed below the insulating sheet 70. Therefore, the insulating sheet 70 can also be called a heat dissipation sheet. The insulating sheet 70 can also be called an insulating plate, insulating substrate, heat dissipation plate, heat dissipation substrate, etc. The insulating sheet 70 is made of, for example, epoxy resin, etc.

[0036] Incidentally, the wire diameter of the first to third control wires W1 to W3 is, for example, about 15 to 50 μm, which is, for example, about one tenth the wire diameter of the main current wire W4. Therefore, the rigidity of the first to third control wires W1 to W3 is significantly lower than that of the main current wire W4, and they are easily deformed by the resin flow during transfer molding of the sealing resin 60. If the first to third control wires W1 to W3 are deformed in this way, it may cause a short circuit between different potentials, a decrease in bonding strength due to deformation (open), etc.

[0037] In particular, as shown in FIG. 3, the first control wiring W1 connecting between the semiconductor chip 11 and the control element 21 (similarly between the semiconductor chips 12 to 14 and the control element 22) is separated in the height direction (Z direction) by the semiconductor chip 11 being located lower than the control element 21 in the Z direction, so that the loop height H3 of the first control wiring W1 becomes high and the effective wiring length becomes long. Therefore, the first control wiring W1 is particularly prone to deformation due to a strong load, and is prone to deterioration in manufacturability and quality. In particular, the sealing resin 60 injected in the resin injection direction D during transfer molding branches into an upward flow direction D1 in the Z direction of the control element 21 and a downward flow direction D2 in the Z direction of the control element 21, so that the height of the control element 21 in the Z direction becomes higher, and the higher the loop height H3, the more likely the sealing resin 60 will flow in the downward flow direction D2. Therefore, the first control wiring W1 extending so as to cross the flow direction D2 is more likely to deform.

[0038] 4, the first control wiring W1 having a length L in plan view is deformed by flowing in the positive Y direction due to the resin flow during transfer molding of the sealing resin 60, and this flow is referred to as the deformed first control wiring W1a (shown by the dashed line). The flow rate s / L [%], which is expressed by the flow amount s, which is the maximum length of the first control wiring W1 and the first control wiring W1a in the direction perpendicular to the first control wiring W1 in plan view, and the above-mentioned length L, varies depending on the loop height H3 of the first control wiring W1 shown in FIG.

[0039] As shown in FIG. 5, the flow rate s / L, which was about 37% on average when the loop height H3 was 1960 μm, decreased to about 27% on average when the loop height H3 was 1830 μm. As described above, the lower the loop height H3, the more the deformation of the first control wiring W1 can be suppressed. Therefore, as described above, the first frame 41 of the control lead frame 40 has the bent portions 41c, 41d, and 41e, and the control die pads 41a and 41b are positioned downward in the Z direction so as to approach the height of the main die pads 34a to 37a of the main current lead frame 30, which is effective in terms of lowering the loop height H3 and suppressing the deformation of the first control wiring W1. In addition, by suppressing the deformation of the first control wiring W1 and the like, it is possible to avoid the wiring from becoming thick, and therefore it is also possible to prevent the semiconductor chip 11 and the control elements 21 and 22 having many bond pads from becoming large, the cost increase, and the reliability decrease of the semiconductor device 1 (for example, peeling due to an increase in the stress of the sealing resin 60). Furthermore, if the control die pads 41a, 41b are lowered to the same height in the Z direction as the main die pads 34a to 37a, the cost will increase due to the larger size of the insulating sheet 70, wiring (e.g., ultrasonic bonding) of the first to third control wirings W1 to W3 will become difficult, and bending processing of the control lead frame 40 will become difficult.

[0040] The control lead frame 40 is, for example, composed of many frames 41 to 43 that are separated from each other, such as one first frame 41, 14 second frames 42, and three third frames 43. Therefore, each of the frames 41 to 43 has a narrow width perpendicular to the extension direction in a plan view. Therefore, if all the frames 41 to 43 are bent, the positional accuracy of each of the frames 41 to 43 will deteriorate, and for example, the distance between the frames will become too close to each other, causing a short circuit, or the frames will be enlarged in order to ensure the distance between them.

[0041] Therefore, while the first frame 41 has the bent portions 41c, 41d, and 41e, it is preferable that the second frame 42 and the third frame 43 do not have any bent portions at least inside the sealing resin 60.

[0042] In addition, the control elements 21 and 22 arranged on the control die pads 41a and 41b of the first frame 41 are connected to the second frame 42 and the third frame 43 via the second control wiring W2. Therefore, by lowering the height of the control die pads 41a and 41b of the first frame 41 in the Z direction and bringing the height of the upper surfaces of the control elements 21 and 22 closer to the height of the upper surfaces of the second frame 42 and the third frame 43, the loop height of the second control wiring W2 can be lowered similarly to the loop height H3 of the first control wiring W1 described above, and thus deformation of the second control wiring W2 can also be suppressed. In this way, it is effective to lower the height of the control die pads 41a and 41b in the Z direction in the control lead frame 40.

[0043] In the present embodiment described above, the semiconductor device 1 includes the semiconductor chips 11-14, the main current lead frames 34-37 having the main die pads 34a-37a on which the semiconductor chips 11-14 are arranged, the control elements 21, 22 connected to the semiconductor chips 11-14 via the first control wiring W1, and the control lead frame 40 having the control die pads 41a, 41b on which the control elements 21, 22 are arranged. The control lead frame 40 includes a first frame 41 having the control die pads 41a, 41b, and a second frame 42 connected to the control elements 21, 22 via the second control wiring W2. The first frame 41 further includes bent portions 41c, 41d, 41e that are bent so that the control die pads 41a, 41b are located lower than the second frame 42 in the thickness direction (Z direction) of the semiconductor chips 11-14.

[0044] In this way, by providing the bent portions 41c to 41e so that the control die pads 41a and 41b of the first frame 41 are located lower than the second frame 42 in the Z direction, the number of frames to be bent can be reduced compared to the embodiment in which not only the control die pad 41a but also the second frame 42 are bent downward in the Z direction. In particular, the number of second frames 42 connected to the control elements 21 and 22 via the second control wiring W2 is large, and each of the second frames 42 is narrow and densely arranged. Therefore, if these second frames 42 are also bent downward in the Z direction, the positional accuracy of the second frames 42 and therefore the positional accuracy of the control lead frame 40 will deteriorate. Therefore, according to this embodiment, the positional accuracy of the control lead frame 40 can be improved. In addition, by improving the positional accuracy of the control lead frame 40, it is possible to prevent the distance between two adjacent second frames 42, between the second frame 42 and the first frame 41, etc. from becoming too close to each other, causing a short circuit, or to prevent the control lead frame 40 and the semiconductor device 1 from becoming large in size in order to ensure the distance.

[0045] Furthermore, by positioning the control die pads 41a, 41b lower than the second frame 42 in the Z direction, the height of the upper surface of the control elements 21, 22 can be brought closer to the height of the upper surface of the second frame 42, thereby making it possible to reduce the loop height of the second control wiring W2 connecting the control elements 21, 22 and the second frame 42. This makes it possible to suppress deformation of the second control wiring W2 due to resin flow during transfer molding of the sealing resin 60, etc., with a simple configuration. In addition, since the height of the control elements 21, 22 can be brought closer to the semiconductor chips 11 to 14, the detection accuracy of environmental information such as temperature detected by the control elements 21, 22 can also be improved.

[0046] In addition, in this embodiment, the control die pads 41a, 41b of the control lead frame 40 are located higher than the main die pads 34a to 37a of the main current lead frame 30 in the Z direction.

[0047] Therefore, by bending the first frame 41 so that the control die pads 41a, 41b are positioned lower in the Z direction than the second frame 42 as described above, the difference in height between the control elements 21, 22 and the semiconductor chips 11-14 can be reduced, and thus the loop height H3 of the first control wiring W1 connecting the control elements 21, 22 and the semiconductor chips 11-14 can be reduced. Furthermore, during transfer molding of the sealing resin 60, the sealing resin 60 becomes less likely to flow below the first frame 41 (the flow rate of the sealing resin 60 decreases), and deformation of the first control wiring W1 due to the resin flow can be suppressed with a simple configuration.

[0048] In this embodiment, the main current lead frames 34-37 extend from the main die pad 34a to the negative side in the Y direction (an example of a first direction) away from the control die pads 41a, 41b. The first frame 41 extends from the control die pads 41a, 41b to the positive side in the Y direction (an example of a second direction opposite to the first direction). The bent portions 41c, 41d are provided on both sides in the X direction (an example of a third direction side and a fourth direction side perpendicular to the first direction and opposite to each other) of the first frame 41 relative to the control die pads 41a, 41b.

[0049] As a result, the region extending in the X direction between the control die pads 41a, 41b and the bent portions 41c, 41d is also located below the second frame 42, making it difficult for the sealing resin 60 to flow below the first frame 41. Therefore, deformation of the first control wiring W1 can be suppressed with a simple configuration.

[0050] In addition, in this embodiment, the semiconductor device 1 further includes a sealing resin 60 that seals at least the semiconductor chips 11 to 14 and the control elements 21 and 22, and the main current lead frame 30 and the control lead frame 40 extend from the sealing resin 60 at the same heights H1 and H2 in the Z direction.

[0051] This makes it easier to process the main current lead frame 30 and the control lead frame 40 from a single flat metal plate, and improves the usability of the control terminals of the main current lead frame 30 and the control lead frame 40 extending from the sealing resin 60.

[0052] In this embodiment, the sealing resin 60 is injected from the side surface from which the main current lead frame 30 extends (for example, the front surface on the negative side in the Y direction).

[0053] As a result, the first to third control wirings W1 to W3, which have lower rigidity than the main current wiring W4, are located downstream in the resin injection direction D of the sealing resin 60, thereby suppressing deformation of the first to third control wirings W1 to W3.

[0054] In addition, in this embodiment, the semiconductor device 1 is provided with a plurality of control elements 21, 22, and the first frame 41 has a plurality of control die pads 41a, 41b on which the control elements 21, 22 are respectively arranged, and these plurality of control die pads 41a, 41b are located at the same height in the Z direction.

[0055] As a result, compared to a configuration in which only one of the control die pads 41a, 41b is positioned lower in the Z direction than the second frame 42, the sealing resin 60 is less likely to flow in the flow direction D2 that intersects the first control wiring W1 that connects the semiconductor chips 11-14 and the control elements 21, 22, and deformation of the first control wiring W1 can be suppressed with a simple configuration.

[0056] In the present embodiment, the control lead frame 40 has electronic components 51, 52, and 53 connected to the second frame 42 via the third control wiring W3, which are disposed on the component die pad 43a of the third frame 43. The control die pads 41a and 41b are located lower in the Z direction than the second frame 42 and the component die pad 43a.

[0057] This makes it possible to reduce the number of frames to be bent in the control lead frame 40, compared to a mode in which the third frame 43 is bent downward in the Z direction. This makes it possible to improve the positional accuracy of the third frame 43, thereby further improving the positional accuracy of the control lead frame 40. It is also possible to prevent short circuits caused by the second frame 42 and the third frame 43 becoming too close to each other, or to prevent the semiconductor device 1 from becoming larger in size in order to ensure the distance between them.

[0058] The semiconductor device of the present invention is not limited to the semiconductor device 1 according to the present embodiment, and may be modified, substituted, or altered in various ways without departing from the spirit of the technical idea. Furthermore, if the technical idea can be realized in a different way due to technological progress or a derived technology, the invention may be implemented using that method. Therefore, the claims cover all embodiments that may be included within the scope of the technical idea.

[0059] For example, the control die pads 41a, 41b of the control lead frame 40 may be located at the same height as or lower than the main die pads 34a to 37a of the main current lead frame 30 in the Z direction. The positions of the bent portions 41c to 41e of the control lead frame 40 may be other positions as long as at least one of the control die pads 41a, 41b can be bent so as to be located lower than the second frame 42 in the Z direction. A height H1 in the Z direction at which the main current lead frame 30 extends from the sealing resin 60 and a height H2 in the Z direction at which the control lead frame 40 extends from the sealing resin 60 may be different. The position at which the sealing resin 60 is injected is not limited to the side surface (front surface) of the sealing resin 60 from which the main current lead frames 31 to 37 extend. The control die pads 41a, 41b of the control lead frame 40 may be provided at different heights in the Z direction. Furthermore, the control die pads 41a, 41b only need to be positioned lower in the Z direction than the second frame 42, and may be positioned at the same height in the Z direction as or higher than the third frame 43 (for example, when the third frame 43 has a bent portion such that the component die pad 43a is positioned lower in the Z direction than the second frame 42).

[0060] Below, some of the inventions described in the specification and drawings of this application will be additionally described.

[0061] <Appendix 1> A semiconductor chip; a main current lead frame having a main die pad on which the semiconductor chip is disposed; A control element connected to the semiconductor chip via a first control wiring; a control lead frame having a control die pad on which the control element is disposed; the control lead frame includes a first frame having the control die pad and a second frame connected to the control element via a second control wiring; The first frame further has a bent portion that is bent so that the control die pad is located lower than the second frame in a thickness direction of the semiconductor chip. A semiconductor device comprising:

[0062] <Appendix 2> The control die pad is located above the main die pad in the thickness direction. 2. The semiconductor device according to claim 1 .

[0063] <Appendix 3> the main current lead frame extends in a first direction away from the main die pad to the control die pad; the first frame extends from the control die pad in a second direction opposite to the first direction; The bent portions are provided on the first frame on a third direction side and a fourth direction side that are perpendicular to the first direction and the second direction and opposite to each other with respect to the control die pad. 3. The semiconductor device according to claim 1 or 2.

[0064] <Appendix 4> Further comprising a sealing resin that seals at least the semiconductor chip and the control element, The main current lead frame and the control lead frame extend from the sealing resin at the same height in the thickness direction. 4. The semiconductor device according to claim 1,

[0065] <Appendix 5> Further comprising a sealing resin that seals at least the semiconductor chip and the control element, The sealing resin is injected from the side surface from which the main current lead frame extends. 4. The semiconductor device according to claim 1,

[0066] <Appendix 6> A plurality of the control elements are provided, the first frame has a plurality of the control die pads, each of which has the control element disposed thereon; The control die pads are positioned at the same height in the thickness direction. 6. The semiconductor device according to claim 1,

[0067] <Appendix 7> the control lead frame further includes a third frame having a component die pad on which an electronic component connected to the second frame via a third control wiring is disposed; The control die pad is located lower than the second frame and the component die pad in the thickness direction. 7. The semiconductor device according to claim 1, [Industrial Applicability]

[0068] INDUSTRIAL APPLICABILITY As described above, the present invention has an effect of improving the positional accuracy of a control lead frame, and is particularly useful for inverter devices for industrial or electrical equipment. [Explanation of symbols]

[0069] 1 Semiconductor device 11, 12, 13, 14 Semiconductor chips 21,22 Control element 30(31~37) Main current lead frame 34a, 35a, 36a, 37a Main die pad 34b,35b,36b,37b Bent part 40 Control lead frame 41 1st Frame 41a, 41b Control die pad 41c,41d,41e Bent part 42 2nd Frame 43 3rd Frame 43a Component die pad 51, 52, 53 Electronic components 60 Sealing resin 61 Recess 70 Insulation sheet D Resin injection direction D1,D2 Flow direction W1 First control wiring W1a 1st control wiring (after transformation) W2 Second control wiring W3 3rd control wiring W4 Main current wiring

Claims

1. A semiconductor chip; a main current lead frame having a main die pad on which the semiconductor chip is disposed; A control element connected to the semiconductor chip via a first control wiring; a control lead frame having a control die pad on which the control element is disposed; the control lead frame includes a first frame having the control die pad and a second frame connected to the control element via a second control wiring; The first frame further has a bent portion that is bent so that the control die pad is located lower than the second frame in a thickness direction of the semiconductor chip. A semiconductor device comprising:

2. The control die pad is located above the main die pad in the thickness direction.

2. The semiconductor device according to claim 1.

3. the main current lead frame extends in a first direction away from the main die pad to the control die pad; the first frame extends from the control die pad in a second direction opposite to the first direction; The bent portions are provided on the first frame on a third direction side and a fourth direction side that are perpendicular to the first direction and the second direction and opposite to each other with respect to the control die pad.

3. The semiconductor device according to claim 1, wherein the first and second electrodes are electrically connected to each other.

4. Further comprising a sealing resin that seals at least the semiconductor chip and the control element, The main current lead frame and the control lead frame extend from the sealing resin at the same height in the thickness direction.

3. The semiconductor device according to claim 1, wherein the first and second electrodes are electrically connected to each other.

5. Further comprising a sealing resin that seals at least the semiconductor chip and the control element, The sealing resin is injected from the side surface from which the main current lead frame extends.

3. The semiconductor device according to claim 1, wherein the first and second electrodes are electrically connected to each other.

6. A plurality of the control elements are provided, the first frame has a plurality of control die pads on each of which the control element is disposed; The control die pads are positioned at the same height in the thickness direction.

3. The semiconductor device according to claim 1, wherein the first and second electrodes are electrically connected to each other.

7. the control lead frame further includes a third frame having a component die pad on which an electronic component connected to the second frame via a third control wiring is disposed; The control die pad is located lower than the second frame and the component die pad in the thickness direction.

3. The semiconductor device according to claim 1, wherein the first and second electrodes are electrically connected to each other.

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