Nitride structure and semiconductor device

Abstract

To provide a nitride structure and a semiconductor device, capable of improving characteristics.SOLUTION: According to an embodiment, a nitride structure includes a first stacked body, a second stacked body, and an intermediate layer provided between the first stacked body and the second stacked body in a first direction. The first stacked body includes a plurality of first films and a plurality of second films. The second stacked body includes a plurality of third film and a plurality of fourth films. The first stacked body includes a plurality of pits. A part of the intermediate layer is provided in the plurality of pits. The second stacked body does not include the pits, or a second density of the pits in the second stacked body is lower than a first density of the plurality of pits in the first stacked body.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] Embodiments of the present invention relate to a nitride structure and a semiconductor device.

Background Art

[0002] For example, in a semiconductor device based on a nitride semiconductor, improvement in characteristics is desired.

Prior Art Document

Patent Document

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] Embodiments of the present invention provide a nitride structure and a semiconductor device capable of improving characteristics.

Means for Solving the Problems

[0005] According to an embodiment of the present invention, the nitride structure includes a first laminate, a second laminate, and an intermediate layer containing Al z1 Ga 1-z1 N (0 ≦ z1 ≦ 1) provided between the first laminate and the second laminate in a first direction. The first laminate includes a plurality of first films containing Al x1 Ga 1-x1 N (0 < x1 ≦ 1), and a plurality of second films containing Al x2 Ga 1-x2 N (0 ≦ x2 < 1, x2 < x1). One of the plurality of first films is provided between one of the plurality of second films and another one of the plurality of second films in the first direction. One of the plurality of second films is provided between one of the plurality of first films and another one of the plurality of first films in the first direction. The second laminate includes Al x3 Ga 1-x3A plurality of third films including N(0 < x3 ≤ 1), and Al x4 Ga 1-x4 A plurality of fourth films including N(0 ≤ x4 < 1, x4 < x3), are included. One of the plurality of third films is provided between one of the plurality of fourth films and another one of the plurality of fourth films in the first direction. One of the plurality of fourth films is provided between one of the plurality of third films and another one of the plurality of third films in the first direction. The first laminate includes a plurality of pits. A part of the intermediate layer is provided in the plurality of pits. The second laminate does not include pits. Or, a second density of pits in the second laminate is lower than a first density of the plurality of pits in the first laminate.

Brief Description of the Drawings

[0006] [Figure 1] FIG. 1 is a schematic cross-sectional view illustrating a nitride structure according to the first embodiment. [Diagram 2] FIG. 2 is a schematic cross-sectional view illustrating a nitride structure according to the first embodiment. [Diagram 3] FIG. 3 is a schematic cross-sectional view illustrating a semiconductor device according to the second embodiment. [Figure 4] FIG. 4 is a schematic cross-sectional view illustrating a semiconductor device according to the second embodiment.

Embodiments for Carrying Out the Invention

[0007] Hereinafter, each embodiment of the present invention will be described with reference to the drawings. The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the ratio of the sizes between parts, etc. are not necessarily the same as the actual ones. Even when representing the same part, there are cases where the dimensions and ratios are represented differently in the drawings. In the present specification and each figure, the same reference numerals are given to the same elements as those described above with respect to the previously presented figures, and the detailed description will be omitted as appropriate.

[0008] (First Embodiment) FIG. 1 is a schematic cross-sectional view illustrating a nitride structure according to the first embodiment. As shown in FIG. 1, a nitride structure 210 according to the embodiment includes a first laminate 60A, a second laminate 60B, and an intermediate layer 65. The intermediate layer 65 is provided between the first laminate 60A and the second laminate 60B in a first direction D1.

[0009] The first direction D1 is the Z-axis direction. One direction perpendicular to the Z-axis direction is the X-axis direction. A direction perpendicular to the Z-axis direction and the X-axis direction is the Y-axis direction. The first laminate 60A, the second laminate 60B, and the intermediate layer 65 are in a layered form along the X-Y plane.

[0010] The intermediate layer 65 contains Al z1 Ga 1-z1 N (0 ≦ z1 ≦ 1). In one example, the composition ratio z1 is 0 or more and 0.30 or less. The composition ratio z1 may be 0 or more and 0.05 or less. The intermediate layer 65 may contain, for example, GaN. The intermediate layer 65 may not contain, for example, impurities that impart conductivity.

[0011] The first laminate 60A includes a plurality of first films 61 and a plurality of second films 62. For example, the plurality of first films 61 are arranged along the first direction D1. For example, the plurality of second films 62 are arranged along the first direction D1. The plurality of first films 61 contain Al x1 Ga 1-x1 N (0 <x1 ≦ 1). The plurality of second films 62 contain Al x2 Ga 1-x2 N (0 ≦ x2 <1, x2 <x1). In one example, the plurality of first films 61 may be AlN films. The plurality of second films 62 may be AlGaN films.

[0012] One of the plurality of first films 61 is provided between one of the plurality of second films 62 and another one of the plurality of second films 62 in the first direction D1. One of the plurality of second films 62 is provided between one of the plurality of first films 61 and another one of the plurality of first films 61 in the first direction D1. For example, the first film 61 and the second film 62 may be alternately arranged along the first direction D1. The first laminate 60A is, for example, a superlattice layer.

[0013] The second laminate 60B includes a plurality of third films 63 and a plurality of fourth films 64. For example, the plurality of third films 63 are arranged along the first direction D1. For example, the plurality of fourth films 64 are arranged along the first direction D1. The plurality of third films 63 contain Al x3 Ga 1-x3 N (0 < x3 ≤ 1). The plurality of fourth films 64 contain Al x4 Ga 1-x4 N (0 ≤ x4 < 1, x4 < x3). In one example, the plurality of third films 63 may be AlN films. The plurality of fourth films 64 may be AlGaN films.

[0014] One of the plurality of third films 63 is provided between one of the plurality of fourth films 64 and another one of the plurality of fourth films 64 in the first direction D1. One of the plurality of fourth films 64 is provided between one of the plurality of third films 63 and another one of the plurality of third films 63 in the first direction D1. For example, the third films 63 and the fourth films 64 may be arranged alternately along the first direction D1. The second laminate 60B is, for example, a superlattice layer.

[0015] As shown in FIG. 1, the first laminate 60A includes a plurality of pits 60p. A part of the intermediate layer 65 is provided in the plurality of pits 60p. The plurality of pits 60p are filled by the intermediate layer 65. The intermediate layer 65 includes a surface facing the second laminate 60B. This surface may be substantially flat.

[0016] In an embodiment, the second laminate 60B does not include pits. Or, the second density of the pits in the second laminate 60B is lower than the first density of the plurality of pits 60p in the first laminate 60A. With such a configuration, good crystallinity is obtained in the second laminate 60B. According to the embodiment, a nitride structure capable of improving characteristics can be obtained.

[0017] As shown in FIG. 1, the first stack 60A includes a plurality of dislocations DD1. At least two of the plurality of dislocations DD1 are merged in one of the plurality of pits 60p. This reduces the density of the dislocations DD1. For example, the second dislocation density in the second stack 60B is lower than the first dislocation density in the first stack 60A.

[0018] In the embodiment, a plurality of pits 60p are intentionally introduced in the first stack 60A. The direction of dislocations DD1 included in the first stack 60A changes in the pits 60p. The change in direction causes the plurality of dislocations DD1 to merge. As a result, the dislocation density can be reduced.

[0019] For example, the first stacked body 60A may be formed under conditions that make it easy to form the multiple pits 60p. For example, when forming the first stacked body 60A, the V / III ratio of the source gas is set low, so that the multiple pits 60p are easily formed. For example, the temperature when forming the first stacked body 60A may be set low. This makes it easy to form the multiple pits 60p. The formation of the multiple pits 60p can reduce the dislocation density.

[0020] On the other hand, the second stack 60B, which has a reduced dislocation density, may be formed under conditions that make it difficult for the multiple pits 60p to be formed, resulting in a highly flat surface.

[0021] Generally, the pits 60p are recognized as crystal defects, and the aim is to suppress the formation of the pits 60p. In contrast, in the embodiment, the effect of reducing dislocations in the multiple pits 60p in the first stack 60A is utilized. The multiple pits 60p are filled and flattened by the intermediate layer 65. Furthermore, the second stack 60B is formed on the intermediate layer 65 with reduced dislocations under conditions that make it difficult for the pits 60p to be formed. As a result, low dislocation density and high flatness are obtained in the second stack 60B.

[0022] For example, the second density of the plurality of pits 60p in the second stack 60B may be equal to or less than 0.5 times the first density of the plurality of pits 60p in the first stack 60A.

[0023] For example, the second dislocation density in the second stack 60B is not more than 0.5 times the first dislocation density in the first stack 60A.

[0024] 1, the intermediate layer thickness t5 of the intermediate layer 65 along the first direction D1 is thicker than the first thickness t1 of one of the multiple first films 61. The intermediate layer thickness t5 is thicker than the second thickness t2 of one of the multiple second films 62. The intermediate layer thickness t5 is thicker than the third thickness t3 of one of the multiple third films 63. The intermediate layer thickness t5 is thicker than the fourth thickness t4 of one of the multiple fourth films 64.

[0025] For example, the intermediate layer thickness t5 may be 10 times or more and 300 times or less than the first thickness t1. The intermediate layer thickness t5 may be 2 times or more and 60 times or less than the second thickness t2. The intermediate layer thickness t5 may be 10 times or more and 300 times or less than the third thickness t3. The intermediate layer thickness t5 may be 2 times or more and 60 times or less than the fourth thickness t4.

[0026] For example, the composition ratio x1 is 0.7 or more and 1.0 or less. In this case, the first thickness t1 may be 3 nm or more and 5 nm or less. For example, the composition ratio x2 is 0.10 or more and 0.50 or less. In this case, the second thickness t2 may be 5 nm or more and 25 nm or less. For example, the composition ratio x3 is 0.7 or more and 1.0 or less. In this case, the third thickness t3 may be 3 nm or more and 5 nm or less. For example, the composition ratio x4 is 0.0 or more and 0.30 or less. In this case, the fourth thickness t4 may be 5 nm or more and 25 nm or less.

[0027] The thickness t60A (see FIG. 1) of the first stack 60A may be, for example, 100 nm or more and 1000 nm or less. The number of the first films 61 may be, for example, 5 or more and 125 or less.

[0028] The thickness t60B (see FIG. 1) of the second stack 60B may be, for example, 600 nm or more and 3500 nm or less. The number of the multiple third films 63 may be, for example, 20 or more and 435 or less.

[0029] In an embodiment, the carbon concentration in the first laminate 60A may be higher than the carbon concentration in the second laminate 60B. For example, the first laminate 60A is formed under conditions where the carbon concentration becomes high (for example, V / III ratio or temperature). Thereby, crystal defects such as pits 60p are likely to be formed. In the crystal defect, the direction of the dislocation changes, and the dislocation density can be reduced.

[0030] In an embodiment, the carbon concentration in the first laminate 60A may be 2 times or more and 10 times or less the carbon concentration in the second laminate 60B. The dislocation density can be effectively suppressed.

[0031] In an embodiment, the carbon concentration in the intermediate layer 65 may be 2 times or more and 50 times or less the carbon concentration in the second laminate 60B. For example, high flatness can be obtained. For example, high pressure resistance can be easily obtained.

[0032] FIG. 2 is a schematic cross-sectional view illustrating a nitride structure according to the first embodiment. As shown in FIG. 2, the nitride structure 210 according to the embodiment may include a substrate 60, a first nitride layer 66, and a second nitride layer 67 in addition to the first laminate 60A, the second laminate 60B, and the intermediate layer 65.

[0033] The substrate 60 may be, for example, a silicon substrate or the like. The first nitride layer 66 contains Al y1 Ga 1-y1 N (0 <y1 ≦ 1). The second nitride layer 67 contains Al y2 Ga 1-y2 N (0 <y2 <1, y2 <y1). The first nitride layer 66 is provided between the substrate 60 and the first laminate 60A. The second nitride layer 67 is provided between the first nitride layer 66 and the first laminate 60A.

[0034] The first nitride layer 66 and the second nitride layer 67 are, for example, buffer layers. For example, the first nitride layer 66 may include AlN. The first nitride layer 66 may be in contact with the substrate 60. The second nitride layer 67 may be, for example, an AlGaN layer. By providing a buffer layer, it is easy to obtain a high quality crystal.

[0035] The nitride structure 210 may include a semiconductor member 10M. The semiconductor member 10M may include, for example, Ga and N. The semiconductor member 10M may include, for example, a GaN layer and an AlGaN layer. The GaN layer is provided between the second stacked body 60B and the AlGaN layer.

[0036] Second embodiment FIG. 3 is a schematic cross-sectional view illustrating the semiconductor device according to the second embodiment. As shown in FIG. 3, the semiconductor device 110 according to the embodiment includes the nitride structure 210 according to the first embodiment, a semiconductor member 10M, a first electrode 51, a second electrode 52, and a third electrode 53.

[0037] The semiconductor member 10M is Al α1 Ga 1-α1 A first semiconductor layer 10 containing N (0≦α1<1) and Al α2 Ga 1-α2 and a second semiconductor layer 20 containing N (0<α2≦1, α1<α2). The composition ratio α1 is, for example, 0 or more and 0.15 or less. The first semiconductor layer 10 may be, for example, a GaN layer. The composition ratio α2 is, for example, more than 0.15 and 0.3 or less. The second semiconductor layer 20 may be, for example, an AlGaN layer.

[0038] The first semiconductor layer 10 is provided between the second stacked body 60B and the second semiconductor layer 20. The semiconductor member 10M may further include a nitride layer. The nitride layer is provided between the second stacked body 60B and the first semiconductor layer 10. The nitride layer is, for example, a GaN layer. The carbon concentration in the nitride layer is higher than the carbon concentration in the first semiconductor layer 10. The nitride layer is provided as necessary, and may be omitted.

[0039] A second direction D2 from the first electrode 51 to the second electrode 52 intersects with the first direction D1. The second direction D2 may be, for example, the X-axis direction. The position of the third electrode 53 in the second direction D2 is between the position of the first electrode 51 in the second direction D2 and the position of the second electrode 52 in the second direction D2.

[0040] The second semiconductor layer 20 includes a first semiconductor portion 21 and a second semiconductor portion 22. The direction from the first semiconductor portion 21 to the second semiconductor portion 22 is along a second direction D2. The first electrode 51 is electrically connected to the first semiconductor portion 21. The second electrode 52 is electrically connected to the second semiconductor portion 22.

[0041] The current flowing between the first electrode 51 and the second electrode 52 is controlled by the potential of the third electrode 53. The potential of the third electrode 53 may be, for example, a potential based on the potential of the first electrode 51. The first electrode 51 functions as, for example, a source electrode. The second electrode 52 functions as a drain electrode. The third electrode 53 functions as a gate electrode. The semiconductor device 110 is, for example, a transistor.

[0042] The first semiconductor layer 10 includes a region facing the second semiconductor layer 20. A carrier region is formed in this region. The carrier region is, for example, a two-dimensional electron gas. The semiconductor device 110 is, for example, a HEMT (High Electron Mobility Transistor).

[0043] The semiconductor device 110 includes a nitride structure 210 according to the first embodiment. In the semiconductor device 110, good crystallinity can be obtained. For example, a low dislocation density can be obtained.

[0044] 3, in this example, at least a portion of the third electrode 53 is provided between the first semiconductor portion 21 and the second semiconductor portion 22 in the second direction D2. The third electrode 53 is, for example, a recessed gate electrode.

[0045] For example, the first semiconductor layer 10 includes a first partial region 10a, a second partial region 10b, a third partial region 10c, a fourth partial region 10d, and a fifth partial region 10e. The direction from the first partial region 10a to the first electrode 51 is along the first direction D1. The direction from the second partial region 10b to the second electrode 52 is along the first direction D1. The direction from the third partial region 10c to the third electrode 53 is along the first direction D1.

[0046] The position of the fourth partial region 10d in the second direction D2 is between the position of the first partial region 10a in the second direction D2 and the position of the third partial region 10c in the second direction D2. The position of the fifth partial region 10e in the second direction D2 is between the position of the third partial region 10c in the second direction D2 and the position of the second partial region 10b in the second direction D2.

[0047] The direction from the fourth partial region 10d to the first semiconductor portion 21 is along the first direction D1. The direction from the fifth partial region 10e to the second semiconductor portion 22 is along the first direction D1. In this example, a part of the third electrode 53 is between the fourth partial region 10d and the fifth partial region 10e in the second direction D2. A high threshold voltage is obtained. For example, a normally-off operation is obtained.

[0048] 3, the semiconductor device 110 may further include a first insulating member 41. The first insulating member 41 includes a first insulating portion 41p. The first insulating portion 41p is provided between the third electrode 53 and the semiconductor member 10M. The first insulating portion 41p functions as, for example, a gate insulating film.

[0049] FIG. 4 is a schematic cross-sectional view illustrating the semiconductor device according to the second embodiment. 4, the semiconductor device 111 according to the embodiment includes the nitride structure 210 according to the first embodiment, a semiconductor member 10M, a first electrode 51, a second electrode 52, and a third electrode 53. In the semiconductor device 111, the third electrode 53 does not overlap with the second semiconductor layer 20 in the second direction D2. Except for this, the configuration of the semiconductor device 111 may be similar to that of the semiconductor device 110.

[0050] The semiconductor device 111 can obtain, for example, a normal-on operation. In the semiconductor device 111, the first insulating member 41 may be omitted. For example, it can be used as a high-frequency switching element.

[0051] In the embodiment, information regarding the shape of the nitride region, etc. is obtained, for example, by electron microscope observation. Information regarding the composition and element concentration in the nitride region is obtained, for example, by EDX (Energy Dispersive X-ray Spectroscopy), or SIMS (Secondary Ion Mass Spectrometry), etc. Information regarding the composition in the nitride region may be obtained, for example, by inverse lattice space mapping.

[0052] The embodiment may include the following technical solutions. (Technical solution 1) A first laminate, A second laminate, An intermediate layer provided between the first laminate and the second laminate in the first direction and containing Al z1 Ga 1-z1 N (0 ≦ z1 ≦ 1), and comprising, The first laminate comprises a plurality of first films containing Al x1 Ga 1-x1 N (0 < x1 ≦ 1), a plurality of second films containing Al x2 Ga 1-x2 N (0 ≦ x2 < 1, x2 < x1), and including, One of the plurality of first films is provided between one of the plurality of second films and another one of the plurality of second films in the first direction, One of the plurality of second films is provided between one of the plurality of first films and another one of the plurality of first films in the first direction, The second laminate comprises a plurality of third films containing Al x3 Ga 1-x3 N (0 < x3 ≦ 1), Alx4 Ga 1-x4 A plurality of fourth films containing N(0 ≦ x4 < 1, x4 < x3), including, One of the plurality of third films is provided between one of the plurality of fourth films and another one of the plurality of fourth films in the first direction. One of the plurality of fourth films is provided between one of the plurality of third films and another one of the plurality of third films in the first direction. The first laminate includes a plurality of pits. A part of the intermediate layer is provided in the plurality of pits. The second laminate is a nitride structure that does not include pits or the second density of pits in the second laminate is lower than the first density of the plurality of pits in the first laminate.

[0053] (Technical solution 2) The nitride structure according to Technical solution 1, wherein the second density is 0.5 times or less of the first density.

[0054] (Technical solution 3) The nitride structure according to Technical solution 1 or 2, wherein the second dislocation density in the second laminate is lower than the first dislocation density in the first laminate.

[0055] (Technical solution 4) The intermediate layer thickness along the first direction of the intermediate layer is thicker than the first thickness of one of the plurality of first films. The intermediate layer thickness is thicker than the second thickness of one of the plurality of second films. The intermediate layer thickness is thicker than the third thickness of one of the plurality of third films. The nitride structure according to any one of Technical solutions 1 to 3, wherein the intermediate layer thickness is thicker than the fourth thickness of one of the plurality of fourth films.

[0056] (Technical solution 5) The nitride structure according to Technical solution 4, wherein the intermediate layer thickness is 10 times or more and 300 times or less of the first thickness.

[0057] (Technical proposal 6) The nitride structure according to Technical Proposal 4, wherein the thickness of the intermediate layer is between 2 and 60 times the second thickness.

[0058] (Technical proposal 7) The nitride structure according to Technical Proposal 4, wherein the thickness of the intermediate layer is 10 times or more and 300 times or less than the third thickness.

[0059] (Technical proposal 8) The nitride structure according to Technical Proposal 4, wherein the thickness of the intermediate layer is between 2 and 60 times the fourth thickness.

[0060] (Technical proposal 9) The x1 is equal to or greater than 0.7 and equal to or less than 1.0, and the first thickness is equal to or greater than 3 nm and equal to or less than 5 nm, The x2 is equal to or greater than 0.1 and equal to or less than 0.5, and the second thickness is equal to or greater than 5 nm and equal to or less than 25 nm, The x3 is equal to or greater than 0.7 and equal to or less than 1.0, and the third thickness is equal to or greater than 3 nm and equal to or less than 5 nm, The nitride structure according to any one of Technical Schemes 4 to 8, wherein x4 is 0.0 or more and 0.3 or less, and the fourth thickness is 5 nm or more and 25 nm or less.

[0061] (Technical proposal 10) The nitride structure according to any one of Technical Schemes 1 to 9, wherein z1 is 0 or more and 0.05 or less.

[0062] (Technical proposal 11) the first stack includes a plurality of dislocations; 11. The nitride structure according to any one of Technical Schemes 1 to 10, wherein at least two of the plurality of dislocations coalesce within one of the plurality of pits.

[0063] (Technical proposal 12) The nitride structure according to any one of Technical Schemes 1 to 11, wherein the first stacked body has a higher carbon concentration than the second stacked body.

[0064] (Technical proposal 13) The nitride structure according to any one of Technical Solutions 1 to 12, wherein the carbon concentration in the first laminate is at least twice and at most ten times the carbon concentration in the second laminate.

[0065] (Technical Solution 14) A first laminate, A second laminate, An intermediate layer containing Al z1 Ga 1-z1 N (0 ≦ z1 ≦ 1) provided between the first laminate and the second laminate in the first direction, comprising The first laminate contains a plurality of first films containing Al x1 Ga 1-x1 N (0 < x1 ≦ 1), contains a plurality of second films containing Al x2 Ga 1-x2 N (0 ≦ x2 < 1, x2 < x1), including One of the plurality of first films is provided between one of the plurality of second films and another one of the plurality of second films in the first direction, One of the plurality of second films is provided between one of the plurality of first films and another one of the plurality of first films in the first direction, The second laminate contains a plurality of third films containing Al x3 Ga 1-x3 N (0 < x3 ≦ 1), contains a plurality of fourth films containing Al x4 Ga 1-x4 N (0 ≦ x4 < 1, x4 < x3), including One of the plurality of third films is provided between one of the plurality of fourth films and another one of the plurality of fourth films in the first direction, One of the plurality of fourth films is provided between one of the plurality of third films and another one of the plurality of third films in the first direction, The nitride structure in which the carbon concentration in the first laminate is higher than the carbon concentration in the second laminate.

[0066] (Technical Solution 15) The nitride structure according to Technical Solution 14, wherein the carbon concentration in the first laminate is at least twice and at most ten times the carbon concentration in the second laminate.

[0067] (Technical Solution 16) A substrate, Al y1 Ga 1-y1 A first nitride layer containing N(0 < y1 ≤ 1), Al y2 Ga 1-y2 A second nitride layer containing N(0 < y2 < 1, y2 < y1), further comprising, the first nitride layer is provided between the substrate and the first laminate, the nitride structure according to any one of Technical Solutions 1 to 15, wherein the second nitride layer is provided between the first nitride layer and the first laminate.

[0068] (Technical Solution 17) The nitride structure according to Technical Solution 16, wherein the first nitride layer contains AlN and is in contact with the substrate.

[0069] (Technical Solution 18) The nitride structure according to any one of Technical Solutions 1 to 17, a semiconductor member, a first electrode, a second electrode, a third electrode, comprising, the semiconductor member is Al α1 Ga 1-α1 a first semiconductor layer containing N(0 ≤ α1 < 1), Al α2 Ga 1-α2 a second semiconductor layer containing N(0 < α2 ≤ 1, α1 < α2), including, the first semiconductor layer is provided between the second laminate and the second semiconductor layer, the second direction from the first electrode to the second electrode intersects the first direction, a position of the third electrode in the second direction is between a position of the first electrode in the second direction and a position of the second electrode in the second direction, the second semiconductor layer includes a first semiconductor portion and a second semiconductor portion; a direction from the first semiconductor portion to the second semiconductor portion is along the second direction; the first electrode is electrically connected to the first semiconductor portion; The second electrode is electrically connected to the second semiconductor portion.

[0070] (Technical proposal 19) Further comprising a first insulating member including a first insulating portion; A semiconductor device as described in Technical Proposal 18, wherein the first insulating portion is provided between the third electrode and the semiconductor member.

[0071] (Technical proposal 20) The semiconductor device described in Technical Proposal 18 or 19, wherein at least a portion of the third electrode is provided between the first semiconductor portion and the second semiconductor portion in the second direction.

[0072] According to the embodiment, it is possible to provide a nitride structure and a semiconductor device capable of improving characteristics.

[0073] In this specification, "electrically connected" includes a state in which multiple conductors are in physical contact with each other and a current flows between the multiple conductors. "Electrically connected" includes a state in which a conductor is inserted between multiple conductors and a current flows between the multiple conductors.

[0074] The above describes the embodiments of the present invention with reference to specific examples. However, the present invention is not limited to these specific examples. For example, the specific configurations of the elements, such as the nitride region and the substrate, contained in the nitride structure are included in the scope of the present invention as long as a person skilled in the art can carry out the present invention in the same manner and obtain the same effects by appropriately selecting them from the known range.

[0075] Furthermore, any combination of two or more elements of each of the specific examples, within the scope of technical feasibility, is also included within the scope of the present invention as long as it includes the gist of the present invention.

[0076] In addition, all nitride structures and semiconductor devices that can be implemented by a person skilled in the art by appropriately modifying the design based on the nitride structures and semiconductor devices described above as the embodiments of the present invention also belong to the scope of the present invention as long as they include the gist of the present invention.

[0077] In addition, within the scope of the concept of the present invention, a person skilled in the art may conceive of various modifications and alterations, and these modifications and alterations are also considered to fall within the scope of the present invention.

[0078] Although some embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included in the scope and spirit of the invention, and are included in the scope of the invention and its equivalents described in the claims. [Explanation of symbols]

[0079] 10, 20: first and second semiconductor layers, 10M: semiconductor member, 10a-10e: first to fifth partial regions, 21, 22: first and second semiconductor portions, 41: first insulating member, 41p: first insulating portion, 51-53: first to third electrodes, 60: base, 60A, 60B: first and second stacked bodies, 60p: pits, 61-64: first to fourth films, 65: intermediate layer, 66, 67: first and second nitride layers, 110, 111: semiconductor device, 210: nitride structure, D1, D2: first and second directions, DD1: dislocation, t1-t4: first to fourth thicknesses, t5: intermediate layer thickness, t60A, t60B: thickness

Claims

1. A first laminate; A second laminate; An Al layer is provided between the first stack and the second stack in the first direction. ｚ１ G １－ｚ１ N (0≦z1≦1), and Equipped with The first laminate is A ｘ１ G １－ｘ１ A plurality of first films including N (0<x1≦1); A ｘ２ G １－ｘ２ A plurality of second films including N (0≦x2<1, x2<x1); Including, one of the plurality of first films is provided between one of the plurality of second films and another one of the plurality of second films in the first direction; the one of the plurality of second films is provided between the one of the plurality of first films and another one of the plurality of first films in the first direction; The second laminate is A ｘ３ G １－ｘ３ A plurality of third films including N (0<x3≦1); A ｘ４ G １－ｘ４ N (0≦x4<1, x4<x3), Including, one of the plurality of third films is provided between one of the plurality of fourth films and another one of the plurality of fourth films in the first direction; the one of the plurality of fourth films is provided between the one of the plurality of third films and another one of the plurality of third films in the first direction; the first laminate includes a plurality of pits; a portion of the intermediate layer is provided within the plurality of pits; The second stack is free of pits or a second density of pits in the second stack is lower than a first density of the plurality of pits in the first stack.

2. The nitride structure of claim 1 , wherein a second dislocation density in the second stack is lower than a first dislocation density in the first stack.

3. an intermediate layer thickness along the first direction of the intermediate layer is greater than a first thickness of the one of the plurality of first films; the intermediate layer thickness is greater than a second thickness of the one of the plurality of second films; the intermediate layer thickness is greater than a third thickness of the one of the plurality of third films; The nitride structure of claim 1 , wherein said intermediate layer thickness is greater than a fourth thickness of said one of said plurality of fourth films.

4. The x1 is equal to or greater than 0.7 and equal to or less than 1.0, and the first thickness is equal to or greater than 3 nm and equal to or less than 5 nm, The x2 is equal to or greater than 0.1 and equal to or less than 0.5, and the second thickness is equal to or greater than 5 nm and equal to or less than 25 nm, The x3 is equal to or greater than 0.7 and equal to or less than 1.0, and the third thickness is equal to or greater than 3 nm and equal to or less than 5 nm, 4. The nitride structure of claim 3, wherein x4 is greater than or equal to 0.0 and less than or equal to 0.3, and the fourth thickness is greater than or equal to 5 nm and less than or equal to 25 nm.

5. The nitride structure according to claim 1 , wherein z1 is equal to or greater than 0 and equal to or less than 0.

05.

6. the first stack includes a plurality of dislocations; The nitride structure of any one of claims 1 to 5, wherein at least two of said plurality of dislocations coalesce within one of said plurality of pits.

7. The nitride structure of claim 1 , wherein a concentration of carbon in the first stack is higher than a concentration of carbon in the second stack.

8. A first laminate; A second laminate; and An Al layer is provided between the first stack and the second stack in the first direction. ｚ１ G １－ｚ１ N (0≦z1≦1), and Equipped with The first laminate is A ｘ１ G １－ｘ１ A plurality of first films including N (0<x1≦1); A ｘ２ G １－ｘ２ A plurality of second films including N (0≦x2<1, x2<x1); Including, one of the plurality of first films is provided between one of the plurality of second films and another one of the plurality of second films in the first direction; the one of the plurality of second films is provided between the one of the plurality of first films and another one of the plurality of first films in the first direction; The second laminate is A ｘ３ G １－ｘ３ A plurality of third films including N (0<x3≦1); A ｘ４ G １－ｘ４ N (0≦x4<1, x4<x3), Including, one of the plurality of third films is provided between one of the plurality of fourth films and another one of the plurality of fourth films in the first direction; the one of the plurality of fourth films is provided between the one of the plurality of third films and another one of the plurality of third films in the first direction; A nitride structure, wherein a concentration of carbon in the first stack is higher than a concentration of carbon in the second stack.

9. The nitride structure according to claim 8 , wherein the carbon concentration in the first stack is not less than two times and not more than ten times the carbon concentration in the second stack.

10. The nitride structure of claim 1 ; A semiconductor member; A first electrode; A second electrode; A third electrode; Equipped with The semiconductor member is A α１ G １－α１ A first semiconductor layer including N (0≦α1<1); A α２ G １－α２ A second semiconductor layer including N (0<α2≦1, α1<α2); Including, the first semiconductor layer is provided between the second stacked body and the second semiconductor layer, a second direction from the first electrode to the second electrode intersects with the first direction; a position of the third electrode in the second direction is between a position of the first electrode in the second direction and a position of the second electrode in the second direction, the second semiconductor layer includes a first semiconductor portion and a second semiconductor portion; a direction from the first semiconductor portion to the second semiconductor portion is along the second direction; the first electrode is electrically connected to the first semiconductor portion; The second electrode is electrically connected to the second semiconductor portion.

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