Magnetic sensor device

Abstract

To provide a magnetic sensor device in which a uniform magnetic field can be applied to a magnetic sensor by a magnetic field generator.SOLUTION: A magnetic field generator 3 is configured so as to generate a magnetic field to be applied to a magnetic sensor 2. The conductor layer 30 of the magnetic field generator 3 includes a first end 30a, a second end 30b, multiple main wires 31, a first sub wire 32, and a second sub wire 33. The first sub wire 32 includes multiple first routes extending from the first end 30a to each of the multiple main wires 31 through multiple first connection parts. The second sub wire 33 includes multiple second routes extending from the second end 30b to each of the multiple main wires 31 through multiple second connection parts. The number of the multiple first connection parts is the same in the arbitrary two-first routes. The number of the multiple second connection parts is the same in the arbitrary two-second routes.SELECTED DRAWING: Figure 9

Description

[Technical field]

[0001] The present invention relates to a magnetic sensor device comprising a magnetic field generator. [Background technology]

[0002] In recent years, magnetic sensors have been used for various purposes. A known magnetic sensor is one that uses a spin-valve magnetoresistance effect element. The spin-valve magnetoresistance effect element has a magnetization pinned layer having a magnetization whose direction is fixed, a free layer having a magnetization whose direction can be changed according to the direction of an applied magnetic field, and a gap layer disposed between the magnetization pinned layer and the free layer.

[0003] In a spin-valve magnetoresistance effect element, the resistance value changes according to the angle that the magnetization direction of the free layer makes with respect to the magnetization direction of the magnetization fixed layer, with the resistance value being minimum when this angle is 0° and maximum when the angle is 180°. In order to improve the detection accuracy of the magnetic sensor, it is preferable to align the magnetization direction of the free layer before using the magnetic sensor.

[0004] Patent Document 1 discloses a current detector and a magnetic field detector. Each of the current detector and the magnetic field detector includes a magnetoresistance effect element and a coil. In these devices, a magnetic field is generated around the coil by supplying a current to the coil. The generated magnetic field is used to orient the magnetization direction of the magnetization free layer of the magnetoresistance effect element in a predetermined direction. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Patent Publication No. 2021-92527 Summary of the Invention [Problem to be solved by the invention]

[0006] The magnetic sensor is composed of a plurality of magnetoresistance effect elements. When a magnetic field is applied to the plurality of magnetoresistance effect elements by using a magnetic field generator such as a coil, it is preferable that a uniform magnetic field is applied to each of the plurality of magnetoresistance effect elements. To achieve this, it is preferable that the current density in the conductor constituting the magnetic field generator is uniform.

[0007] The present invention has been made in consideration of such problems, and its object is to provide a magnetic sensor device that includes a magnetic sensor and a magnetic field generator, in which the magnetic field generator can apply a uniform magnetic field to the magnetic sensor. [Means for solving the problem]

[0008] The magnetic sensor device of the present invention includes a magnetic sensor and a magnetic field generator configured to generate a magnetic field to be applied to the magnetic sensor. The magnetic field generator of the present invention is configured to generate a magnetic field for testing to be applied to the magnetic sensor. The magnetic field generator includes a conductor layer made of a conductive material. The conductor layer includes a first end, a second end, and a plurality of main wirings for generating a magnetic field, the main wirings being provided between the first end and the second end and separated from each other, a first sub-wiring that electrically connects the first end to the plurality of main wirings, and a second sub-wiring that electrically connects the second end to the plurality of main wirings.

[0009] The first sub-wiring includes a plurality of first paths extending from a first end to each of the plurality of main wirings. The second sub-wiring includes a plurality of second paths extending from a second end to each of the plurality of main wirings. Each of the plurality of first paths passes through a plurality of first coupling parts from which the first sub-wiring branches. Each of the plurality of second paths passes through a plurality of second coupling parts from which the second sub-wiring branches. Any two of the plurality of first paths pass through the same number of the plurality of first coupling parts. Any two of the plurality of second paths pass through the same number of the plurality of second coupling parts. Effect of the Invention

[0010] In the magnetic sensor device and the magnetic field generator of the present invention, any two of the first paths have the same number of first coupling parts, and any two of the second paths have the same number of second coupling parts, so that the present invention has the advantage that the magnetic field generator can apply a uniform magnetic field to the magnetic sensor. [Brief description of the drawings]

[0011] [Figure 1] 1 is a perspective view showing a magnetic sensor system according to a first embodiment of the present invention. [Diagram 2] 1 is a perspective view showing a magnetic sensor device according to a first embodiment of the present invention. [Diagram 3] FIG. 1 is a functional block diagram showing a configuration of a magnetic sensor device according to a first embodiment of the present invention. [Figure 4] 1 is a circuit diagram showing a circuit configuration of a magnetic sensor according to a first embodiment of the present invention. [Diagram 5] FIG. 2 is a perspective view showing a part of one resistor portion in the first embodiment of the present invention. [Figure 6] 1 is a perspective view showing a magnetoresistive effect element according to a first embodiment of the present invention. [Figure 7] FIG. 1 is a plan view showing a first electronic component according to a first embodiment of the present invention. [Figure 8] 1 is a cross-sectional view showing a first electronic component according to a first embodiment of the present invention. [Figure 9] FIG. 2 is a plan view showing a first conductor layer in the first embodiment of the present invention. [Figure 10] FIG. 4 is a plan view showing a second conductor layer in the first embodiment of the present invention. [Figure 11] 2 is an enlarged plan view showing a portion of a conductor layer in the first embodiment of the present invention. FIG. [Figure 12] 5 is an enlarged plan view showing another part of the conductor layer in the first embodiment of the present invention. FIG. [Figure 13]FIG. 11 is a plan view showing a conductor layer of a first modified example of the first embodiment of the present invention. [Figure 14] FIG. 11 is a plan view showing a conductor layer of a second modified example of the first embodiment of the present invention. [Figure 15] FIG. 13 is a plan view showing a conductor layer of a third modified example of the first embodiment of the present invention. [Figure 16] FIG. 4 is a cross-sectional view showing an electronic component according to a second embodiment of the present invention. [Figure 17] FIG. 11 is a circuit diagram showing a circuit configuration of a magnetic sensor according to a third embodiment of the present invention. [Figure 18] FIG. 13 is a plan view showing a portion of a first conductor layer in a third embodiment of the present invention. [Figure 19] FIG. 13 is a plan view showing a portion of a second conductor layer in a third embodiment of the present invention. [Figure 20] FIG. 11 is a plan view showing an electronic component according to a fourth embodiment of the present invention. [Figure 21] FIG. 13 is a perspective view showing a configuration of a current sensor system according to a fifth embodiment of the present invention. [Figure 22] FIG. 13 is a cross-sectional view showing a magnetic sensor device according to a fifth embodiment of the present invention. [Figure 23] FIG. 13 is a block diagram showing a configuration of a current sensor system according to a fifth embodiment of the present invention. [Figure 24] FIG. 13 is a circuit diagram showing a circuit configuration of a magnetic sensor according to a fifth embodiment of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0012] [First embodiment] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. First, a schematic configuration of a magnetic sensor system including a magnetic sensor device according to a first embodiment of the present invention will be described with reference to FIG. 1. FIG. 1 is a perspective view showing a magnetic sensor system 100 according to the present embodiment. The magnetic sensor system 100 according to the present embodiment includes a magnetic sensor device 1 according to the present embodiment and a magnetic field generator 101. The magnetic field generator 101 generates a target magnetic field MF, which is a magnetic field to be detected by the magnetic sensor device 1.

[0013] The magnetic field generator 101 in this embodiment is a cylindrical magnet. The magnetic field generator 101 has a north pole and a south pole arranged symmetrically about a virtual plane including the central axis of the cylinder. The magnetic field generator 101 rotates about the central axis of the cylinder. As a result, the direction of the target magnetic field MF generated by the magnetic field generator 101 rotates about a rotation axis C including the central axis of the cylinder.

[0014] The magnetic sensor device 1 is disposed at a position where it can detect a target magnetic field MF at a predetermined reference position PR. The reference position PR may be on the rotation axis C. In the following description, it is assumed that the reference position PR is on the rotation axis C. The magnetic sensor device 1 detects a target magnetic field MF generated by the magnetic field generator 101 and generates at least one detection signal. The at least one detection signal corresponds to the relative position of the magnetic field generator 101 with respect to the magnetic sensor device 1, in particular the rotational position of the magnetic field generator 101.

[0015] Here, a virtual plane parallel to one end face of the magnetic field generator 101 and including the reference position PR is referred to as a reference plane. In this reference plane, the direction of the target magnetic field MF rotates around the reference position PR. The reference direction is located in the reference plane and intersects with the reference position PR. In the following description, the direction of the target magnetic field MF at the reference position PR refers to a direction located in the reference plane. The magnetic sensor device 1 is configured to generate an angle detection value θs that corresponds to the direction of the target magnetic field MF at the reference position PR.

[0016] Next, the configuration of the magnetic sensor device 1 will be described with reference to Fig. 2 and Fig. 3. Fig. 2 is a perspective view showing the magnetic sensor device 1. Fig. 3 is a functional block diagram showing the configuration of the magnetic sensor device 1. As shown in Fig. 2 and Fig. 3, the magnetic sensor device 1 includes a magnetic sensor 2 configured to detect a target magnetic field MF (see Fig. 1) and generate at least one detection signal, a magnetic field generator 3 configured to generate a magnetic field to be applied to the magnetic sensor 2, and a processor 4 configured to generate an angle detection value θs based on the at least one detection signal. The processor 4 is formed, for example, by an application specific integrated circuit (ASIC).

[0017] In this embodiment, the magnetic field generator 3 and the processor 4 are configured to be integrated into one electronic component. The magnetic sensor 2 is configured to be an electronic component separate from the magnetic field generator 3 and the processor 4. Hereinafter, the electronic component including the magnetic sensor 2 will be referred to as a first electronic component 5, and the electronic component including the magnetic field generator 3 and the processor 4 will be referred to as a second electronic component 6. The magnetic sensor device 1 includes the first electronic component 5 and the second electronic component 6.

[0018] Each of the first and second electronic components 5, 6 has the form of a rectangular parallelepiped chip. The first electronic component 5 has an upper surface 5a and a lower surface 5b located opposite each other, and four side surfaces connecting the upper surface 5a and the lower surface 5b. The second electronic component 6 includes an upper surface 6a and a lower surface 6b located opposite each other, and four side surfaces connecting the upper surface 6a and the lower surface 6b. The first electronic component 5 is mounted on the upper surface 6a of the second electronic component 6 with the lower surface 5b of the first electronic component 5 facing the upper surface 6a of the second electronic component 6. The first electronic component 5 is bonded to the second electronic component 6 by, for example, an adhesive.

[0019] In the second electronic component 6, the magnetic field generator 3 is stacked on the processor 4. When the first electronic component 5 is mounted on the second electronic component 6, the magnetic field generator 3 is disposed between the magnetic sensor 2 and the processor 4.

[0020] Here, the X direction, Y direction, and Z direction are defined as shown in FIG. 2. The X direction, Y direction, and Z direction are mutually orthogonal. In this embodiment, the direction perpendicular to the upper surface 5a of the first electronic component 5 and from the lower surface 5b toward the upper surface 5a of the first electronic component 5 is defined as the Z direction. The direction opposite to the X direction is defined as the -X direction, the direction opposite to the Y direction is defined as the -Y direction, and the direction opposite to the Z direction is defined as the -Z direction. It can be said that the magnetic sensor 2 and the magnetic field generator 3 are stacked in a direction parallel to the Z direction.

[0021] Hereinafter, the position at the end of the Z direction from the reference position will be referred to as "above", and the position on the opposite side of the reference position from "above" will be referred to as "below". Furthermore, with regard to the components of the magnetic sensor device 1, the surface located at the end in the Z direction will be referred to as the "top surface", and the surface located at the end in the -Z direction will be referred to as the "bottom surface". Furthermore, the expression "when viewed from the Z direction" means that the object is viewed from a position away in the Z direction.

[0022] The first electronic component 5 has a plurality of first pads (electrode pads) provided on an upper surface 5a. The second electronic component 6 has a plurality of second pads (electrode pads) provided on an upper surface 6a. In the magnetic sensor device 1, two corresponding pads of the plurality of first pads and the plurality of second pads are connected to each other by a bonding wire.

[0023] The magnetic sensor 2 includes a first detection circuit 10 and a second detection circuit 20. The first and second detection circuits 10, 20 are connected to the processor 4 via a plurality of first pads, a plurality of second pads, and a plurality of bonding wires.

[0024] Each of the first and second detection circuits 10 and 20 includes a plurality of magnetic detection elements. In this embodiment, the plurality of magnetic detection elements are particularly a plurality of magnetoresistance effect elements. Hereinafter, the magnetoresistance effect elements will be referred to as MR elements.

[0025] The first detection circuit 10 detects a component of the target magnetic field MF in a first direction and generates at least one first detection signal corresponding to this component. The second detection circuit 20 detects a component of the target magnetic field MF in a second direction and generates at least one second detection signal corresponding to this component. In this embodiment, the first direction is parallel to the X direction and the second direction is parallel to the Y direction.

[0026] The processor 4 is configured to generate an angle detection value θs based on the at least one first detection signal and the at least one second detection signal.

[0027] The magnetic field generator 3 is configured to generate a first magnetic field and a second magnetic field. A driving current for generating the first magnetic field and the second magnetic field is supplied to the magnetic field generator 3 from the processor 4. The driving current may be a direct current or an alternating current. When a direct current is supplied to the magnetic field generator 3, the direction and intensity of each of the first and second magnetic fields are constant. When an alternating current is supplied to the magnetic field generator 3, the direction and intensity of each of the first and second magnetic fields change periodically.

[0028] The first magnetic field includes a first magnetic field component that is applied to the first detection circuit 10. The second magnetic field includes a second magnetic field component that is applied to the second detection circuit 20. The direction of the first magnetic field component is parallel to the first direction, i.e., the X direction or the -X direction. The direction of the second magnetic field component is parallel to the second direction, i.e., the Y direction or the -Y direction. The operation of the magnetic field generator 3 is controlled by, for example, the processor 4.

[0029] The first magnetic field is used, for example, to measure the sensitivity of the first detection circuit 10. Specifically, the sensitivity of the first detection circuit 10 is measured, for example, by measuring the magnitude of at least one first detection signal while changing the intensity of the first magnetic field. The second magnetic field is used, for example, to measure the sensitivity of the second detection circuit 20. Specifically, the sensitivity of the second detection circuit 20 is measured, for example, by measuring the magnitude of at least one second detection signal while changing the intensity of the second magnetic field.

[0030] Next, the circuit configuration of the magnetic sensor 2 will be described with reference to Fig. 4. Fig. 4 is a circuit diagram showing the circuit configuration of the magnetic sensor 2.

[0031] The first detection circuit 10 includes four resistors R11, R12, R13, and R14, a power supply port V1, a ground port G1, and two output ports E11 and E12. The resistor R11 is provided between the power supply port V1 and the output port E11. The resistor R12 is provided between the output port E11 and the ground port G1. The resistor R13 is provided between the output port E12 and the ground port G1. The resistor R14 is provided between the power supply port V1 and the output port E12. A voltage or current of a predetermined magnitude is applied to the power supply port V1. The ground port G1 is connected to ground.

[0032] The second detection circuit 20 includes four resistors R21, R22, R23, and R24, a power supply port V2, a ground port G2, and two output ports E21 and E22. The resistor R21 is provided between the power supply port V2 and the output port E21. The resistor R22 is provided between the output port E21 and the ground port G2. The resistor R23 is provided between the output port E22 and the ground port G2. The resistor R24 ​​is provided between the power supply port V2 and the output port E22. A voltage or current of a predetermined magnitude is applied to the power supply port V2. The ground port G2 is connected to the ground.

[0033] Here, the resistor sections R11 to R14, R21 to R24 will be described with reference to Fig. 5 and Fig. 6. Each of the resistor sections R11 to R14, R21 to R24 includes a plurality of MR elements 50. Fig. 5 is a perspective view showing a part of one of the resistor sections R21 to R24. Fig. 6 is a perspective view showing the MR element 50.

[0034] Each of the resistor sections R11 to R14, R21 to R24 further includes a plurality of lower electrodes 61 and a plurality of upper electrodes 62. Each of the lower electrodes 61 has an elongated shape. A gap is formed between two lower electrodes 61 adjacent in the longitudinal direction of the lower electrodes 61. As shown in FIG. 5, an MR element 50 is disposed near both ends in the longitudinal direction on the upper surface of the lower electrode 61. A plurality of upper electrodes 62 are disposed on the plurality of MR elements 50. Each of the upper electrodes 62 has an elongated shape and is disposed on two lower electrodes 61 adjacent in the longitudinal direction of the lower electrode 61 to electrically connect the two adjacent MR elements 50. With this configuration, each of the resistor sections R11 to R14, R21 to R24 includes a plurality of MR elements 50 connected in series by the plurality of lower electrodes 61 and the plurality of upper electrodes 62.

[0035] In this embodiment, each of the multiple MR elements 50 is a spin-valve type MR element. This spin-valve type MR element includes a magnetization pinned layer 52 having a magnetization whose direction is fixed, a free layer 54 having a magnetization whose direction can be changed according to the direction of the target magnetic field MF, and a gap layer 53 disposed between the magnetization pinned layer 52 and the free layer 54. The spin-valve type MR element may be a TMR (tunnel magnetoresistance) element or a GMR (giant magnetoresistance) element. In the TMR element, the gap layer 53 is a tunnel barrier layer. In the GMR element, the gap layer 53 is a non-magnetic conductive layer. In the spin-valve type MR element, the resistance value changes according to the angle that the magnetization direction of the free layer 54 makes with respect to the magnetization direction of the magnetization pinned layer 52. When this angle is 0°, the resistance value is the minimum value, and when the angle is 180°, the resistance value is the maximum value. In each MR element 50 , the free layer 54 has shape anisotropy such that the direction of easy magnetization is perpendicular to the direction of magnetization of the magnetization fixed layer 52 .

[0036] The MR element 50 further includes an antiferromagnetic layer 51. The antiferromagnetic layer 51, the magnetization pinned layer 52, the gap layer 53, and the free layer 54 are laminated in this order from the lower electrode 61 side. The arrangement of the layers 51 to 54 in the MR element 50 may be upside down from the arrangement shown in FIG. 6. The antiferromagnetic layer 51 is made of an antiferromagnetic material, and generates exchange coupling with the magnetization pinned layer 52 to fix the magnetization direction of the magnetization pinned layer 52. The magnetization pinned layer 52 may be a so-called self-pinned type pinned layer (synthetic ferri pinned layer, SFP layer). The self-pinned type pinned layer has a laminated ferri structure in which a ferromagnetic layer, a nonmagnetic intermediate layer, and a ferromagnetic layer are laminated, and the two ferromagnetic layers are antiferromagnetically coupled. When the magnetization pinned layer 52 is a self-pinned type pinned layer, the antiferromagnetic layer 51 may be omitted.

[0037] In Fig. 4, the filled arrows represent the magnetization direction of the magnetization fixed layer 52 in each of the resistor units R11 to R14 and R21 to R24. In the example shown in Fig. 4, the magnetization direction of the magnetization fixed layer 52 in each of the resistor units R11 and R13 is the X direction. The magnetization direction of the magnetization fixed layer 52 in each of the resistor units R12 and R14 is the -X direction. The free layer 54 in each of the resistor units R11 to R14 has shape anisotropy in which the magnetization easy axis direction is parallel to the Y direction.

[0038] The magnetization direction of the magnetization fixed layer 52 in each of the resistor units R21 and R23 is the Y direction. The magnetization direction of the magnetization fixed layer 52 in each of the resistor units R22 and R24 is the -Y direction. The free layer 54 in each of the resistor units R21 to R24 has shape anisotropy in which the magnetization easy axis direction is parallel to the X direction.

[0039] In the first detection circuit 10, the potential of the connection point of the resistors R11 and R12, i.e., the potential of the output port E11, and the potential of the connection point of the resistors R13 and R14, i.e., the potential of the output port E12, change according to the intensity of the component of the target magnetic field MF in the first direction (parallel to the X-direction). The first detection circuit 10 may generate a signal corresponding to the potential of the output port E11 and a signal corresponding to the potential of the output port E12 as the first detection signal. Alternatively, the first detection circuit 10 may generate a signal corresponding to the potential difference between the output ports E11 and E12 as the first detection signal. In this case, the first detection circuit 10 may further include a differential amplifier (differential detector) that outputs a signal corresponding to the potential difference between the output ports E11 and E12 as the first detection signal.

[0040] In the second detection circuit 20, the potential of the connection point of the resistors R21 and R22, i.e., the potential of the output port E21, and the potential of the connection point of the resistors R23 and R24, i.e., the potential of the output port E22, change according to the intensity of the component of the target magnetic field MF in the second direction (parallel to the Y direction). The second detection circuit 20 may generate a signal corresponding to the potential of the output port E21 and a signal corresponding to the potential of the output port E22 as the second detection signal. Alternatively, the second detection circuit 20 may generate a signal corresponding to the potential difference between the output ports E21 and E22 as the second detection signal. In this case, the second detection circuit 20 may further include a differential amplifier that outputs a signal corresponding to the potential difference between the output ports E21 and E22 as the second detection signal.

[0041] Here, a method for generating the angle detection value θs will be described. First, a case will be described in which the first detection circuit 10 generates a signal corresponding to the potential of the output port E11 and a signal corresponding to the potential of the output port E12 as first detection signals, and the second detection circuit 20 generates a signal corresponding to the potential of the output port E21 and a signal corresponding to the potential of the output port E22 as second detection signals. The processor 4 first generates a first signal S1 by a calculation including finding a difference between the two first detection signals, and generates a second signal S2 by a calculation including finding a difference between the two second detection signals. The processor 4 may be configured to be able to correct the amplitude, phase, and offset of each of the first and second signals S1 and S2.

[0042] The processor 4 then calculates the angle detection value θs within a range of 0° or more and less than 360°, for example, by the following formula (1): "atan" represents arc tangent.

[0043] θs=atan(S2 / S1) …(1)

[0044] Next, a case will be described in which the first detection circuit 10 generates a signal corresponding to the potential difference between the output ports E11 and E12 as the first detection signal, and the second detection circuit 20 generates a signal corresponding to the potential difference between the output ports E21 and E22 as the second detection signal. In this case, the processor 4 acquires a signal corresponding to the first detection signal as the first signal S1, and acquires a signal corresponding to the second detection signal as the second signal S2. The processor 4 may acquire the first and second detection signals as the first and second signals S1 and S2, or may acquire two signals obtained by correcting at least one of the amplitude, phase, and offset of the first and second detection signals as the first and second signals S1 and S2. The processor 4 then calculates an angle detection value θs within a range of 0° or more and less than 360° by using the formula (1).

[0045] Next, the configuration of the first electronic component 5 will be described with reference to Fig. 7 and Fig. 8. Fig. 7 is a plan view showing the first electronic component 5. Fig. 8 is a cross-sectional view showing the first electronic component 5.

[0046] 7, a rectangular region marked with a reference symbol A10 indicates a region in which a plurality of MR elements 50 constituting the resistor units R11 to R14 of the first detection circuit 10 are arranged. A rectangular region marked with a reference symbol A20 indicates a region in which a plurality of MR elements 50 constituting the resistor units R21 to R24 of the second detection circuit 20 are arranged. In the example shown in FIG. 7, the regions A10 and A20 are arranged in this order in the X direction. The regions A10 and A20 may be arranged in the Y direction. Alternatively, at least one of the regions A10 and A20 may include a plurality of partial regions arranged at positions separated from each other.

[0047] Here, the MR elements 50 constituting the resistor section R11 to R14 of the first detection circuit 10 are denoted by reference numeral 50A, the lower electrodes 61 connected to the MR elements 50A are denoted by reference numeral 61A, and the upper electrodes 62 connected to the MR elements 50A are denoted by reference numeral 62A. The MR elements 50 constituting the resistor section R21 to R24 of the second detection circuit 20 are denoted by reference numeral 50B, the lower electrodes 61 connected to the MR elements 50B are denoted by reference numeral 61B, and the upper electrodes 62 connected to the MR elements 50B are denoted by reference numeral 62B. The first electronic component 5 includes the MR elements 50A, the MR elements 50B, the lower electrodes 61A, the lower electrodes 61B, the upper electrodes 62A, and the upper electrodes 62B.

[0048] The first electronic component 5 further includes a substrate 41 and insulating layers 42, 43, 44, 45, and 46. The insulating layer 42 is disposed on the substrate 41. The lower electrodes 61A and the lower electrodes 61B are disposed on the insulating layer 42. The insulating layer 43 is disposed on the insulating layer 42 around the lower electrodes 61A and around the lower electrodes 61B. The MR elements 50A are disposed on the lower electrodes 61A. The MR elements 50B are disposed on the lower electrodes 61B. The insulating layer 44 is disposed on the insulating layer 43, the lower electrodes 61A, and the lower electrodes 61B around the MR elements 50A and around the MR elements 50B.

[0049] The multiple upper electrodes 62A are disposed on the insulating layer 44 and the multiple MR elements 50A. The multiple upper electrodes 62B are disposed on the insulating layer 44 and the multiple MR elements 50B. The insulating layer 45 is disposed on the insulating layer 44 around the multiple upper electrodes 62A and around the multiple upper electrodes 62B. The insulating layer 46 is disposed on the insulating layer 45, the multiple upper electrodes 62A, and the multiple upper electrodes 62B.

[0050] Next, the magnetic field generator 3 will be described with reference to Figures 9 and 10. Figure 9 is a plan view showing a first conductor layer in the present embodiment. Figure 10 is a plan view showing a second conductor layer in the present embodiment.

[0051] The magnetic field generator 3 includes a first conductor layer 30A and a second conductor layer 30B each made of a conductive material such as Cu, Au, or Al. The first conductor layer 30A is configured to generate a first magnetic field including a first magnetic field component applied to the first detection circuit 10. The second conductor layer 30B is configured to generate a second magnetic field including a second magnetic field component applied to the second detection circuit 20.

[0052] 9, the first conductor layer 30A includes a first end 30Aa, a second end 30Ab, a plurality of main wirings 31A provided between the first end 30Aa and the second end 30Ab and separated from each other, a first sub-wiring 32A electrically connecting the first end 30Aa and the plurality of main wirings 31A, and a second sub-wiring 33A electrically connecting the second end 30Ab and the plurality of main wirings 31A. The first end 30Aa and the second end 30Ab are each connected to the processor 4 (see FIG. 3).

[0053] The region A10 in which the multiple MR elements 50A constituting the resistor parts R11 to R14 of the first detection circuit 10 are arranged overlaps with the multiple main wirings 31A when viewed from the Z direction. Moreover, the region A10 is arranged between the first sub-wiring 32A and the second sub-wiring 33A when viewed from the Z direction. That is, the multiple MR elements 50A are arranged between the first sub-wiring 32A and the second sub-wiring 33A when viewed from the Z direction. In the region A10, the intensity of the first magnetic field component is the same or approximately the same. Therefore, the intensity of the first magnetic field component applied to each of the multiple MR elements 50A is the same or approximately the same.

[0054] The multiple main wirings 31A are for generating a first magnetic field. In this embodiment, each of the multiple main wirings 31A extends in a direction parallel to the Y direction. The first end 30Aa is disposed ahead of the multiple main wirings 31A in the Y direction. The second end 30Ab is disposed ahead of the multiple main wirings 31A in the -Y direction. When a current flows through the first conductor layer 30A from the first end 30Aa to the second end 30Ab, the direction of the current flowing through each of the multiple main wirings 31A becomes the -Y direction, and a first magnetic field including a magnetic field component in the -X direction as a first magnetic field component is generated. When a current flows through the first conductor layer 30A from the second end 30Ab to the first end 30Aa, the direction of the current flowing through each of the multiple main wirings 31A becomes the Y direction, and a first magnetic field including a magnetic field component in the X direction as a first magnetic field component is generated.

[0055] 10, the second conductor layer 30B includes a first end 30Ba, a second end 30Bb, a plurality of main wirings 31B provided between the first end 30Ba and the second end 30Bb and separated from each other, a first sub-wiring 32B electrically connecting the first end 30Ba and the plurality of main wirings 31B, and a second sub-wiring 33B electrically connecting the second end 30Bb and the plurality of main wirings 31B. The first end 30Ba and the second end 30Bb are each connected to the processor 4 (see FIG. 3).

[0056] The region A20 in which the multiple MR elements 50B constituting the resistor parts R21 to R24 of the second detection circuit 20 are arranged overlaps with the multiple main wirings 31B when viewed from the Z direction. Moreover, the region A20 is arranged between the first sub-wiring 32B and the second sub-wiring 33B when viewed from the Z direction. That is, the multiple MR elements 50B are arranged between the first sub-wiring 32B and the second sub-wiring 33B when viewed from the Z direction. In the region A20, the intensity of the second magnetic field component is the same or approximately the same. Therefore, the intensity of the second magnetic field component applied to each of the multiple MR elements 50B is the same or approximately the same.

[0057] The multiple main wirings 31B are for generating a second magnetic field. In this embodiment, each of the multiple main wirings 31B extends in a direction parallel to the X direction. The first end 30Ba is disposed ahead of the multiple main wirings 31A in the -X direction. The second end 30Bb is disposed ahead of the multiple main wirings 31A in the X direction. When a current flows from the first end 30Ba to the second end 30Bb in the second conductor layer 30B, the direction of the current flowing through each of the multiple main wirings 31B becomes the X direction, and a second magnetic field including a magnetic field component in the -Y direction as the second magnetic field component is generated. When a current flows from the second end 30Bb to the first end 30Ba in the second conductor layer 30B, the direction of the current flowing through each of the multiple main wirings 31B becomes the -X direction, and a second magnetic field including a magnetic field component in the Y direction as the second magnetic field component is generated.

[0058] Here, an arbitrary conductor layer among the first and second conductor layers 30A and 30B is represented by adding the reference symbol 30. A first end of the conductor layer 30 corresponding to the first end 30Aa or the first end 30Ba is represented by adding the reference symbol 30a. A second end of the conductor layer 30 corresponding to the second end 30Ab or the second end 30Bb is represented by adding the reference symbol 30b. A plurality of main wirings of the conductor layer 30 corresponding to the plurality of main wirings 31A or the plurality of main wirings 31B is represented by adding the reference symbol 31. A first sub-wiring of the conductor layer 30 corresponding to the first sub-wiring 32A or the first sub-wiring 32B is represented by adding the reference symbol 32. A second sub-wiring of the conductor layer 30 corresponding to the second sub-wiring 33A or the second sub-wiring 33B is represented by adding the reference symbol 33.

[0059] The configuration of the conductor layer 30 will be described in detail below with reference to Fig. 11 and Fig. 12. Fig. 11 is a plan view showing a part of the conductor layer 30. Fig. 12 is a plan view showing another part of the conductor layer 30. In the following description, the extension direction means the extension direction of each of the multiple main wirings 31.

[0060] In the example shown in FIG. 11 and FIG. 12, the conductor layer 30 includes eight main wirings 311, 312, 313, 314, 315, 316, 317, and 318 as the multiple main wirings 31. The main wirings 311, 312, 313, 314, 315, 316, 317, and 318 are arranged in this order in a direction perpendicular to the extending direction. Here, any one of the main wirings 311 to 318 is referred to as a first main wiring, and the two main wirings adjacent to both sides of the first main wiring are referred to as a second main wiring and a third main wiring. The distance between the first main wiring and the second main wiring and the distance between the first main wiring and the third main wiring may be the same.

[0061] First, features related to the first sub-wiring 32 will be described. The first sub-wiring 32 includes a plurality of first paths extending from the first end 30a to each of the plurality of main wirings 31. Each of the plurality of first paths passes through a plurality of first coupling parts from which the first sub-wiring 32 branches. The number of the plurality of first coupling parts passed through by each of any two first paths among the plurality of first paths is the same. In particular, in this embodiment, the number of the plurality of first coupling parts passed through by each of all the first paths is the same.

[0062] 11, the first sub-wiring 32 includes a plurality of wiring portions 3200, 3201, 3202, 3203, 3204, 3205, 3206, 3207, 3208, 3209, 3210, 3211, 3212, 3213, and 3214, and a plurality of first coupling portions 3221, 3222, 3223, 3224, 3225, 3226, and 3227. The first sub-wiring 32 is configured by electrically connecting the plurality of wiring portions 3200 to 3214 by the plurality of first coupling portions 3221 to 3227.

[0063] The wiring portions 3200, 3201, and 3202 are connected to a first coupling portion 3221. The wiring portions 3201, 3203, and 3204 are connected to a first coupling portion 3222. The wiring portions 3202, 3205, and 3206 are connected to a first coupling portion 3223. The wiring portions 3203, 3207, and 3208 are connected to a first coupling portion 3224. The wiring portions 3204, 3209, and 3210 are connected to a first coupling portion 3225. The wiring portions 3205, 3211, and 3212 are connected to a first coupling portion 3226. The wiring portions 3206, 3213, and 3214 are connected to a first coupling portion 3227.

[0064] The wiring portion 3200 is connected to the first end 30a. The wiring portion 3207 is connected to the main wiring 311. The wiring portion 3208 is connected to the main wiring 312. The wiring portion 3209 is connected to the main wiring 313. The wiring portion 3210 is connected to the main wiring 314. The wiring portion 3211 is connected to the main wiring 315. The wiring portion 3212 is connected to the main wiring 316. The wiring portion 3213 is connected to the main wiring 317. The wiring portion 3214 is connected to the main wiring 318.

[0065] 11, the path from the first end 30a to the main wiring 311 and the path from the first end 30a to the main wiring 312 pass through the first coupling parts 3221, 3222, and 3224. The path from the first end 30a to the main wiring 313 and the path from the first end 30a to the main wiring 314 pass through the first coupling parts 3221, 3222, and 3225. The path from the first end 30a to the main wiring 315 and the path from the first end 30a to the main wiring 316 pass through the first coupling parts 3221, 3223, and 3226. The path from the first end 30a to the main wiring 317 and the path from the first end 30a to the main wiring 318 pass through the first coupling parts 3221, 3223, and 3227.

[0066] Thus, in the example shown in Fig. 11, the number of the plurality of first coupling parts through which each of any two of the plurality of first paths passes is 3. Particularly in the example shown in Fig. 11, the number of the plurality of first coupling parts through which each of the plurality of first paths passes is all three.

[0067] Moreover, the plurality of first coupling portions 3221-3227 includes at least one specific coupling portion to which three wiring portions among the plurality of wiring portions 3200-3214 are electrically connected. Particularly in this embodiment, the plurality of first coupling portions 3221-3227 are all the above-mentioned specific coupling portions.

[0068] Here, in each of the first paths, attention is focused on two first coupling parts connected via one wiring portion. It is preferable that the distance between the two first coupling parts in the extension direction is equal to or greater than the width of the one wiring portion multiplied by the square root of 2.

[0069] Next, features related to the second sub-wiring 33 will be described. The number of the second coupling parts through which each of any two of the second paths passes is the same. In particular, in this embodiment, the number of the second coupling parts through which each of the second paths passes is the same.

[0070] 12, the second sub-wiring 33 includes a plurality of wiring portions 3300, 3301, 3302, 3303, 3304, 3305, 3306, 3307, 3308, 3309, 3310, 3311, 3312, 3313, and 3314, and a plurality of second coupling portions 3321, 3322, 3323, 3324, 3325, 3326, and 3327. The second sub-wiring 33 is configured by electrically connecting the plurality of wiring portions 3300 to 3314 by the plurality of second coupling portions 3321 to 3327.

[0071] The wiring portions 3300, 3301, and 3302 are connected to a second connecting portion 3321. The wiring portions 3301, 3303, and 3304 are connected to a second connecting portion 3322. The wiring portions 3302, 3305, and 3306 are connected to a second connecting portion 3323. The wiring portions 3303, 3307, and 3308 are connected to a second connecting portion 3324. The wiring portions 3304, 3309, and 3310 are connected to a second connecting portion 3325. The wiring portions 3305, 3311, and 3312 are connected to a second connecting portion 3326. The wiring portions 3306, 3313, and 3314 are connected to a second connecting portion 3327.

[0072] The wiring portion 3300 is connected to the second end 30b. The wiring portion 3307 is connected to the main wiring 311. The wiring portion 3308 is connected to the main wiring 312. The wiring portion 3309 is connected to the main wiring 313. The wiring portion 3310 is connected to the main wiring 314. The wiring portion 3311 is connected to the main wiring 315. The wiring portion 3312 is connected to the main wiring 316. The wiring portion 3313 is connected to the main wiring 317. The wiring portion 3314 is connected to the main wiring 318.

[0073] 12, the path from the second end 30b to the main wiring 311 and the path from the second end 30b to the main wiring 312 pass through the second coupling parts 3321, 3322, and 3324. The path from the second end 30b to the main wiring 313 and the path from the second end 30b to the main wiring 314 pass through the second coupling parts 3321, 3322, and 3325. The path from the second end 30b to the main wiring 315 and the path from the second end 30b to the main wiring 316 pass through the second coupling parts 3321, 3323, and 3326. The path from the second end 30b to the main wiring 317 and the path from the second end 30b to the main wiring 318 pass through the second coupling parts 3321, 3323, and 3327.

[0074] Thus, in the example shown in Fig. 12, the number of the plurality of second coupling parts through which each of any two second paths among the plurality of second paths passes is 3. Particularly in the example shown in Fig. 12, the number of the plurality of second coupling parts through which each of the plurality of second paths passes is all three.

[0075] Moreover, the plurality of second coupling portions 3321-3327 includes at least one specific coupling portion to which three wiring portions among the plurality of wiring portions 3300-3314 are electrically connected. Particularly in this embodiment, the plurality of second coupling portions 3321-3327 are all the above-mentioned specific coupling portions.

[0076] Here, in each of the second paths, attention is focused on two second coupling parts connected via one wiring portion. It is preferable that the distance between the two second coupling parts in the extension direction is equal to or greater than the width of the one wiring portion multiplied by the square root of 2.

[0077] Next, the number of the plurality of first coupling parts and the number of the plurality of second coupling parts will be described. Here, the number of the plurality of main wirings 31 is n. The total number of the plurality of first coupling parts and the number of the plurality of second coupling parts is 2(n-1). In the example shown in Fig. 11 and Fig. 12, the number of the main wirings 311-318 is 8, and the total number of the plurality of first coupling parts 3221-3227 and the number of the plurality of second coupling parts 3321-3327 is 14.

[0078] Next, the shape of the conductor layer 30 will be described. The conductor layer 30 preferably has a symmetric shape with respect to a virtual plane that intersects with the first end 30a and the second end 30b. In the example shown in Fig. 11, the multiple main wirings 31 have symmetric shapes with respect to the virtual plane, and the first sub-wirings 32 and the second sub-wirings 33 each have a symmetric shape with respect to the virtual plane.

[0079] The cross-sectional shape of each of the multiple main wirings 31 may be rectangular. The cross-sectional shape of each of the multiple wiring portions of the first sub-wiring 31 may be rectangular. The cross-sectional shape of each of the multiple wiring portions of the second sub-wiring 32 may be rectangular.

[0080] Next, the operation and effect of the magnetic sensor device 1 according to the present embodiment will be described. In the magnetic sensor device 1 according to the present embodiment, the number of the multiple first coupling parts through which each of two arbitrary first paths among the multiple first paths passes is the same. As a result, according to the present embodiment, the current density in the two arbitrary first paths can be made uniform compared to the case where the number of the multiple first coupling parts through which each of the arbitrary two first paths passes is different. Similarly, in the present embodiment, the number of the multiple second coupling parts through which each of the arbitrary two second paths among the multiple second paths passes is the same. As a result, according to the present embodiment, the current density in the two arbitrary second paths can be made uniform compared to the case where the number of the multiple second coupling parts through which each of the arbitrary two second paths passes is different.

[0081] Furthermore, according to this embodiment, by connecting one of the two first paths and one of the two second paths to the same main wiring 31, and connecting the other of the two first paths and the other of the two second paths to the same other main wiring, the current density in each of these two main wirings 31 can be made uniform.

[0082] In particular, in the present embodiment, the number of the plurality of first connection parts through which each of the plurality of first paths passes is the same, and the number of the plurality of second connection parts through which each of the plurality of second paths passes is the same. Thus, according to the present embodiment, the current density in each of the plurality of main wirings 31 can be made uniform. As a result, according to the present embodiment, the intensity of the magnetic field generated from each of the plurality of main wirings 31 can be made uniform. As a result, according to the present embodiment, the intensity of the first magnetic field component applied to the plurality of MR elements 50A constituting the resistance parts R11 to R14 of the first detection circuit 10 of the magnetic sensor 2 can be made uniform, and the intensity of the second magnetic field component applied to the plurality of MR elements 50B constituting the resistance parts R21 to R24 of the second detection circuit 20 of the magnetic sensor 2 can be made uniform.

[0083] Further, in the present embodiment, each of the plurality of main wirings 31 has a shape that is long in one direction, and has one end closest to the first end 30a and the other end closest to the second end 30b. According to the present embodiment, by making the number of the plurality of first connection parts through which each of the plurality of first paths passes the same, and making the number of the plurality of second connection parts through which each of the plurality of second paths passes the same, the lengths of each of the plurality of first paths can be made the same, and the lengths of each of the plurality of second paths can be made the same. Thus, according to the present embodiment, the potential difference between one end and the other end of each of the plurality of main wirings 31 can be made the same. Also by this, according to the present embodiment, the intensity of the first magnetic field component can be made uniform, and the intensity of the second magnetic field component can be made uniform.

[0084] Further, according to the present embodiment, after making the lengths of each of the plurality of main wirings 31 the same, by making the lengths of each of the plurality of first paths the same and making the lengths of each of the plurality of second paths the same, the lengths of each of the plurality of paths from the first end 30a to the second end 30b via the first sub-wiring 32, the plurality of main wirings 31, and the second sub-wiring 33 can be made the same. Also by this, according to the present embodiment, the intensity of the first magnetic field component can be made uniform, and the intensity of the second magnetic field component can be made uniform.

[0085] Furthermore, according to this embodiment, the cross-sectional areas of the main wirings 31 are all the same, the cross-sectional areas of the wiring parts 3200-3214 of the first sub-wiring 32 are all the same, the cross-sectional areas of the wiring parts 3300-3314 of the second sub-wiring 33 are all the same, and then the lengths of the paths are all the same, so that the resistance values ​​of the paths can all be made the same. This also makes it possible to make the strength of the first magnetic field component uniform, and to make the strength of the second magnetic field component uniform.

[0086] [Variations] Next, modified examples of the conductor layer 30 of the magnetic field generator 3 in the present embodiment will be described. First, a conductor layer of a first modified example will be described with reference to FIG. 13. FIG. 13 is a plan view showing a conductor layer 30C of the first modified example. The conductor layer 30C includes a first end 30Ca, a second end 30Cb, a plurality of main wirings 31C provided between the first end 30Ca and the second end 30Cb and separated from each other, a first sub-wiring 32C electrically connecting the first end 30Ca and the plurality of main wirings 31C, and a second sub-wiring 33C electrically connecting the second end 30Cb and the plurality of main wirings 31C.

[0087] The first sub-wiring 32C includes a plurality of first paths extending from the first end 30Ca to each of the plurality of main wirings 31C. Each of the plurality of first paths passes through a plurality of first coupling parts from which the first sub-wiring 32C branches. The number of the plurality of first paths passing through each of the plurality of first coupling parts is four.

[0088] The second sub-wiring 33C includes a plurality of second paths extending from the second end 30Cb to each of the plurality of main wirings 31C. Each of the plurality of second paths passes through a plurality of second coupling parts from which the second sub-wiring 33C branches. The number of the plurality of second coupling parts through which each of the plurality of second paths passes is four.

[0089] In the conductor layer 30C of the first modification, the number of the main wirings 31C is 16, and the total number of the first coupling portions and the second coupling portions is 30.

[0090] Next, the conductor layer of the second modification will be described with reference to Fig. 14. Fig. 14 is a plan view showing a conductor layer 30D of the second modification. The conductor layer 30D includes a first end 30Da, a second end 30Db, a plurality of main wirings 31D provided between the first end 30Da and the second end 30Db and separated from each other, a first sub-wiring 32D electrically connecting the first end 30Da and the plurality of main wirings 31D, and a second sub-wiring 33D electrically connecting the second end 30Db and the plurality of main wirings 31D.

[0091] The first sub-wiring 32D includes a plurality of first paths extending from the first end 30Da to each of the plurality of main wirings 31D. Each of the plurality of first paths passes through a plurality of first coupling parts from which the first sub-wiring 32D branches. The number of the plurality of first paths passing through each of the plurality of first coupling parts is two. The plurality of first paths include four first paths having a first length, two first paths having a second length shorter than the first length, two first paths having a third length shorter than the second length, and one first path having a fourth length shorter than the third length.

[0092] The second sub-wiring 33D includes a plurality of second paths extending from the second end 30Db to each of the plurality of main wirings 31D. Each of the plurality of second paths passes through a plurality of second coupling parts from which the second sub-wiring 33D branches. The number of the plurality of second paths passing through each of the plurality of second coupling parts is two. The plurality of second paths include four second paths having a fifth length, two second paths having a sixth length shorter than the fifth length, two second paths having a seventh length shorter than the sixth length, and one second path having an eighth length shorter than the seventh length.

[0093] In the conductor layer 30D of the second modification, the number of the main wirings 31D is nine, and the total number of the first coupling portions and the second coupling portions is eight.

[0094] Next, a conductor layer of a third modified example will be described with reference to Fig. 15. Fig. 15 is a plan view showing a conductor layer 30E of a third modified example. The conductor layer 30E includes a first end 30Ea, a second end 30Eb, a plurality of main wirings 31E provided between the first end 30Ea and the second end 30Eb and separated from each other, a first sub-wiring 32E electrically connecting the first end 30Ea and the plurality of main wirings 31E, and a second sub-wiring 33E electrically connecting the second end 30Eb and the plurality of main wirings 31E.

[0095] The first sub-wiring 32E includes a plurality of first paths extending from the first end 30Ea to each of the plurality of main wirings 31E. Each of the plurality of first paths passes through a plurality of first coupling parts from which the first sub-wiring 32E branches. The number of the plurality of first coupling parts through which each of the plurality of first paths passes is three. The plurality of first paths include eight first paths having a first length, four first paths having a second length shorter than the first length, four first paths having a third length shorter than the second length, two first paths having a fourth length shorter than the third length, and one first path having a fifth length shorter than the fourth length.

[0096] The second sub-wiring 33E includes a plurality of second paths extending from the second end 30Eb to each of the plurality of main wirings 31E. Each of the plurality of second paths passes through a plurality of second coupling parts from which the second sub-wiring 33E branches. The number of the plurality of second coupling parts through which each of the plurality of second paths passes is three. The plurality of second paths include eight second paths having a sixth length, four second paths having a seventh length shorter than the sixth length, four second paths having an eighth length shorter than the seventh length, two second paths having a ninth length shorter than the eighth length, and one second path having a tenth length shorter than the ninth length.

[0097] In the conductor layer 30E of the second modification, the number of the main wirings 31E is 19, and the total number of the first coupling portions and the second coupling portions is 22.

[0098] [Second embodiment] Next, a second embodiment of the present invention will be described. First, differences between the configuration of the magnetic sensor device 1 according to this embodiment and the first embodiment will be briefly described. In this embodiment, the magnetic sensor 2 and the magnetic field generator 3 are integrated into one electronic component, and the processor 4 is configured to be an electronic component separate from the magnetic sensor 2 and the magnetic field generator 3. Hereinafter, an electronic component including the magnetic sensor 2 and the magnetic field generator 3 will be referred to as electronic component 105. Like the first electronic component 5 or the second electronic component 6 in the first embodiment, the electronic component 105 has the form of a rectangular parallelepiped chip.

[0099] Next, the structure of electronic component 105 will be described with reference to Fig. 16. Fig. 16 is a cross-sectional view showing electronic component 105.

[0100] The magnetic field generator 3 includes two first conductor layers 130A1 and 130A2 each made of a conductive material, instead of the first conductor layer 30A in the first embodiment. The shape of each of the first conductor layers 130A1 and 130A2 is similar to that of the first conductor layer 30A. The first conductor layers 130A1 and 130A2 are configured to generate a first magnetic field including a first magnetic field component applied to the first detection circuit 10 of the magnetic sensor 2. The first conductor layers 130A1 and 130A2 are connected in series or in parallel.

[0101] Moreover, the magnetic field generator 3 includes two second conductor layers 130B1 and 130B2 each made of a conductive material, instead of the second conductor layer 30B in the first embodiment. The shape of each of the second conductor layers 130B1 and 130B2 is similar to that of the second conductor layer 30B. The second conductor layers 130B1 and 130B2 are configured to generate a second magnetic field including a second magnetic field component applied to the second detection circuit 20 of the magnetic sensor 2. The second conductor layers 130B1 and 130B2 are connected in series or in parallel.

[0102] The electronic component 105 further includes a substrate 141 and insulating layers 142, 143, 144, 145, 146, 147, 148, 149, and 150. The insulating layer 142 is disposed on the substrate 141. The first conductor layer 130A1 and the second conductor layer 130B1 are disposed on the insulating layer 142. The insulating layer 143 is disposed on the insulating layer 142 around the first conductor layer 130A1 and the second conductor layer 130B1. The insulating layer 144 is disposed on the first conductor layer 130A1, the second conductor layer 130B1, and the insulating layer 143.

[0103] As described in the first embodiment, the first detection circuit 10 of the magnetic sensor 2 includes a plurality of MR elements 50A, a plurality of lower electrodes 61A, and a plurality of upper electrodes 62A. The second detection circuit 20 of the magnetic sensor 2 includes a plurality of MR elements 50B, a plurality of lower electrodes 61B, and a plurality of upper electrodes 62B. The plurality of lower electrodes 61A and the plurality of lower electrodes 61B are arranged on the insulating layer 144. The insulating layer 145 is arranged around the plurality of lower electrodes 61A and around the plurality of lower electrodes 61B on the insulating layer 144. The plurality of MR elements 50A are arranged on the plurality of lower electrodes 61A. The plurality of MR elements 50B are arranged on the plurality of lower electrodes 61B. The insulating layer 146 is arranged around the plurality of MR elements 50A and around the plurality of MR elements 50B on the plurality of lower electrodes 61A, the plurality of lower electrodes 61B, and the insulating layer 145.

[0104] The multiple upper electrodes 62A are disposed on the multiple MR elements 50A and the insulating layer 146. The multiple upper electrodes 62B are disposed on the multiple MR elements 50B and the insulating layer 146. The insulating layer 147 is disposed on the insulating layer 146 around the multiple upper electrodes 62A and around the multiple upper electrodes 62B.

[0105] The insulating layer 148 is disposed on the plurality of upper electrodes 62A, the plurality of upper electrodes 62B, and the insulating layer 147. The first conductor layer 130A2 and the second conductor layer 130B2 are disposed on the insulating layer 148. The insulating layer 149 is disposed on the insulating layer 148 around the first conductor layer 130A2 and the second conductor layer 130B2. The insulating layer 150 is disposed on the first conductor layer 130A2, the second conductor layer 130B2, and the insulating layer 149.

[0106] In the present embodiment, the multiple MR elements 50A of the first detection circuit 10 are disposed between the first conductor layer 130A1 and the first conductor layer 130A2. The magnetic field generator 3 may include only one of the first conductor layer 130A1 and the first conductor layer 130A2.

[0107] In the present embodiment, the multiple MR elements 50B of the second detection circuit 20 are disposed between the second conductor layer 130B1 and the second conductor layer 130B2. The magnetic field generator 3 may include only one of the second conductor layers 130B1 and 130B2.

[0108] Other configurations, operations, and effects of the present embodiment are similar to those of the first embodiment.

[0109] [Third embodiment] Next, a third embodiment of the present invention will be described. First, differences in the configuration of the magnetic sensor device 1 according to this embodiment from the first embodiment will be briefly described. The magnetic sensor device 1 according to this embodiment includes a magnetic sensor 202 instead of the magnetic sensor 2 in the first embodiment. The first electronic component 5 (see FIG. 2) includes the magnetic sensor 202. The magnetic sensor 202 includes a first detection circuit 210 and a second detection circuit 220.

[0110] The first detection circuit 210 includes a plurality of MR elements 50A, a plurality of lower electrodes 61A, and a plurality of upper electrodes 62A, similar to the first detection circuit 10 in the first embodiment. The second detection circuit 220 includes a plurality of MR elements 50B, a plurality of lower electrodes 61B, and a plurality of upper electrodes 62B, similar to the second detection circuit 20 in the first embodiment.

[0111] The magnetic sensor device 1 according to this embodiment detects geomagnetism as a target magnetic field. The first detection circuit 210 detects a component of the geomagnetism in a first direction and generates at least one first detection signal corresponding to this component. The second detection circuit 220 detects a component of the geomagnetism in a second direction and generates at least one second detection signal corresponding to this component. In this embodiment, the first direction is parallel to the X direction, and the second direction is parallel to the Y direction.

[0112] The first and second detection circuits 210, 220 are connected to a processor 4 (see FIG. 3). The processor 4 is configured to generate a detection value corresponding to the intensity of a component of the geomagnetic field in a first direction and a detection value corresponding to the intensity of a component of the geomagnetic field in a second direction based on the at least one first detection signal and the at least one second detection signal.

[0113] Next, the circuit configuration of the magnetic sensor 202 will be described with reference to Fig. 17. Fig. 17 is a circuit diagram showing the circuit configuration of the magnetic sensor 202.

[0114] The configuration of the first detection circuit 210 is basically the same as the configuration of the first detection circuit 10 in the first embodiment shown in Fig. 4. The first detection circuit 210 includes four resistance units R11, R12, R13, and R14. Each of the resistance units R11 to R14 includes a plurality of MR elements 50A.

[0115] The configuration of the second detection circuit 220 is basically the same as the configuration of the second detection circuit 20 in the first embodiment shown in Fig. 4. The second detection circuit 220 includes four resistance units R21, R22, R23, and R24. Each of the resistance units R21 to R24 includes a plurality of MR elements 50B.

[0116] As described in the first embodiment, each of the MR elements 50A and the MR elements 50B includes a magnetization fixed layer 52 and a free layer 54 (see FIG. 6). In FIG. 17, the solid arrows represent the magnetization direction of the magnetization fixed layer 52 in each of the resistance units R11 to R14 and R21 to R24. The magnetization direction of the magnetization fixed layer 52 in each of the resistance units R11 to R14 and R21 to R24 is the same as the direction shown in FIG. 4 in the first embodiment.

[0117] In Fig. 17, the open arrows represent the magnetization direction of the free layer 54 when no target magnetic field (external magnetic field) is applied to the first and second detection circuits 210, 220. The free layer 54 in each of the resistor units R11 to R14 has shape anisotropy in which the magnetization easy axis direction is parallel to the Y direction. In the example shown in Fig. 17, the magnetization direction of the free layer 54 in each of the resistor units R11, R12 is the Y direction when no target magnetic field (external magnetic field) is applied to the first detection circuit 210. The magnetization direction of the free layer 54 in each of the resistor units R13, R14 is the -Y direction in the above case.

[0118] The magnetization easy axis direction of the free layer 54 in each of the resistor parts R21 to R24 has shape anisotropy in which the magnetization easy axis direction is parallel to the X direction. In the example shown in Fig. 17, the magnetization direction of the free layer 54 in each of the resistor parts R21 and R22 is the X direction when a target magnetic field (external magnetic field) is not applied to the second detection circuit 220. The magnetization direction of the free layer 54 in each of the resistor parts R23 and R24 is the -X direction in the above case.

[0119] Next, the configuration of the magnetic field generator 3 in the present embodiment will be described. In the present embodiment, the magnetic field generator 3 includes a first conductor layer 230A and a second conductor layer 230B each made of a conductive material, instead of the first and second conductor layers 30A, 30B in the first embodiment.

[0120] First, the configuration of the first conductor layer 230A will be described. The first conductor layer 230A is configured to generate a first magnetic field including a first magnetic field component that is applied to a portion of each of the first and second detection circuits 210 and 220.

[0121] The first conductor layer 230A has a structure similar to that of the first conductor layer 30A in the first embodiment. That is, the first conductor layer 230A includes a first end, a second end, a plurality of main wirings 231A provided between the first end and the second end and separated from each other, a first sub-wiring that electrically connects the first end and the plurality of main wirings 231A, and a second sub-wiring that electrically connects the second end and the plurality of main wirings 231A. The first end and the second end are each connected to the processor 4 (see FIG. 3).

[0122] When viewed from the Z direction, the first conductor layer 230A is disposed so as to overlap with a portion of each of the first and second detection circuits 210, 220. The arrangement of the first conductor layer 230A will be described below with reference to Fig. 18. Fig. 18 is a plan view showing a portion of the first conductor layer 230A.

[0123] 18, a rectangular area marked with a reference symbol A211 indicates an area in which a plurality of MR elements 50A constituting the resistor section R11 of the first detection circuit 210 are arranged. A rectangular area marked with a reference symbol A212 indicates an area in which a plurality of MR elements 50A constituting the resistor section R12 of the first detection circuit 210 are arranged. A rectangular area marked with a reference symbol A221 indicates an area in which a plurality of MR elements 50B constituting the resistor section R21 of the second detection circuit 220 are arranged. A rectangular area marked with a reference symbol A222 indicates an area in which a plurality of MR elements 50B constituting the resistor section R22 of the second detection circuit 220 are arranged.

[0124] As shown in FIG. 18, the region A221 is disposed ahead of the region A211 in the X direction. The regions A212 and A222 are disposed ahead of the regions A211 and A221 in the -Y direction, respectively. The regions A211, A212, A221, and A222 overlap with a plurality of main wirings 231A when viewed from the Z direction. Moreover, the regions A211, A212, A221, and A222 are disposed between the first sub-wiring and the second sub-wiring when viewed from the Z direction. Note that the arrangement of the regions A211, A212, A221, and A222 is not limited to the example shown in FIG. 18.

[0125] Here, as shown in FIG. 18, the U direction and the V direction are defined as follows. The U direction is a direction rotated from the X direction toward the -Y direction. The V direction is a direction rotated from the Y direction toward the X direction. In particular, in this embodiment, the U direction is a direction rotated by α from the X direction toward the -Y direction, and the V direction is a direction rotated by α from the Y direction toward the X direction. Here, α is an angle larger than 0° and smaller than 90°. In one example, α is 45°. Also, the direction opposite to the U direction is the -U direction, and the direction opposite to the V direction is the -V direction.

[0126] The multiple main wirings 231A are for generating a first magnetic field. In the example shown in FIG. 18, each of the multiple main wirings 231A extends in a direction parallel to the U direction. The first end is disposed ahead of the multiple main wirings 231A in the U direction. The second end is disposed ahead of the multiple main wirings 231A in the -U direction. When a current is passed through the first conductor layer 230A from the first end to the second end, the direction of the current flowing through each of the multiple main wirings 231A becomes the -U direction, and a first magnetic field including a magnetic field component in the V direction as a first magnetic field component is generated.

[0127] Next, the configuration of the second conductor layer 230B will be described. The second conductor layer 230B is configured to generate a second magnetic field including a second magnetic field component applied to the other part of each of the first and second detection circuits 210 and 220.

[0128] The second conductor layer 230B has a structure similar to that of the second conductor layer 30B in the first embodiment. That is, the second conductor layer 230B includes a first end, a second end, a plurality of main wirings 231B provided between the first end and the second end and separated from each other, a first sub-wiring that electrically connects the first end and the plurality of main wirings 231B, and a second sub-wiring that electrically connects the second end and the plurality of main wirings 231B. The first end and the second end are each connected to the processor 4 (see FIG. 3).

[0129] The second conductor layer 230B is disposed so as to overlap a portion of each of the first and second detection circuits 210, 220 when viewed from the Z direction. The arrangement of the second conductor layer 230B will be described below with reference to Fig. 19. Fig. 19 is a plan view showing a portion of the second conductor layer 230B.

[0130] 19, a rectangular area marked with a reference symbol A213 indicates an area in which a plurality of MR elements 50A constituting the resistor unit R13 of the first detection circuit 210 are arranged. A rectangular area marked with a reference symbol A214 indicates an area in which a plurality of MR elements 50A constituting the resistor unit R14 of the first detection circuit 210 are arranged. A rectangular area marked with a reference symbol A223 indicates an area in which a plurality of MR elements 50B constituting the resistor unit R23 of the second detection circuit 220 are arranged. A rectangular area marked with a reference symbol A224 indicates an area in which a plurality of MR elements 50B constituting the resistor unit R24 of the second detection circuit 220 are arranged.

[0131] As shown in FIG. 19, the region A223 is disposed ahead of the region A213 in the X direction. The regions A214 and A224 are disposed ahead of the regions A213 and A223 in the -Y direction, respectively. The regions A213, A214, A223, and A224 overlap with the main wirings 231B when viewed from the Z direction. The regions A213, A214, A223, and A224 are disposed between the first sub-wiring and the second sub-wiring when viewed from the Z direction. The arrangement of the regions A213, A214, A223, and A224 is not limited to the example shown in FIG. 19.

[0132] The multiple main wirings 231B are for generating a second magnetic field. In the example shown in FIG. 19, each of the multiple main wirings 231B extends in a direction parallel to the U direction. The first end is disposed ahead of the multiple main wirings 231B in the -U direction. The second end is disposed ahead of the multiple main wirings 231B in the U direction. When a current is passed through the second conductor layer 230B from the first end to the second end, the direction of the current flowing through each of the multiple main wirings 231B becomes the U direction, and a second magnetic field including a magnetic field component in the -V direction as the second magnetic field component is generated.

[0133] Next, the operation and effects of the magnetic sensor device 1 in the present embodiment will be described. Each free layer 54 of the plurality of MR elements 50A constituting the resistance parts R11 to R14 of the first detection circuit 210 has shape anisotropy in which the direction of the magnetization easy axis is parallel to the Y direction. When no target magnetic field (external magnetic field) is applied to the first detection circuit 210, the magnetization direction of the free layer 54 in each of the resistance parts R11 and R12 is the Y direction. However, due to a noise magnetic field such as a disturbance magnetic field, the magnetization direction of the free layer 54 in each of the resistance parts R11 and R12 may become the -Y direction. In this case, when the first magnetic field is generated by the first conductor layer 230A of the magnetic field generator 3 and a magnetic field component in the V direction is temporarily applied to each of the resistance parts R11 and R12, the magnetization direction of the free layer 54 also becomes the V direction. After that, when the generation of the first magnetic field is stopped, the magnetization direction of the free layer 54 in each of the resistance parts R11 and R12 becomes the Y direction.

[0134] Similarly, when no target magnetic field (disturbance magnetic field) is applied to the first detection circuit 210, the magnetization direction of the free layer 54 in each of the resistance parts R13 and R14 is the -Y direction. However, due to an external magnetic field, the magnetization direction of the free layer 54 in each of the resistance parts R13 and R14 may become the Y direction. In this case, when the second magnetic field is generated by the second conductor layer 230B of the magnetic field generator 3 and a magnetic field component in the -V direction is temporarily applied to each of the resistance parts R13 and R14, the magnetization direction of the free layer 54 also becomes the -V direction. After that, when the generation of the second magnetic field is stopped, the magnetization direction of the free layer 54 in each of the resistance parts R13 and R14 becomes the -Y direction.

[0135] As described above, the magnetic field generator 3 in the present embodiment is used to align the magnetization direction of the free layer 54 in each of the resistance parts R11 to R14 in a predetermined direction (Y direction or -Y direction), that is, to set or reset the magnetization direction of the free layer 54.

[0136] The above description of the resistor units R11 to R14 of the first detection circuit 210 also applies to the resistor units R21 to R24 of the second detection circuit 220. The magnetic field generator 3 in this embodiment is used to align the magnetization direction of the free layer 54 in each of the resistor units R21 and R22 in the X direction, and to align the magnetization direction of the free layer 54 in each of the resistor units R23 and R24 in the -X direction.

[0137] Other configurations, operations, and effects of the present embodiment are similar to those of the first embodiment.

[0138] [Fourth embodiment] Next, a fourth embodiment of the present invention will be described. First, differences in the configuration of the magnetic sensor device 1 according to this embodiment from the third embodiment will be briefly described. In this embodiment, the magnetic sensor 202 and the magnetic field generator 3 are configured to be integrated into one electronic component, and the processor 4 is configured to be an electronic component separate from the magnetic sensor 202 and the magnetic field generator 3. Hereinafter, an electronic component including the magnetic sensor 202 and the magnetic field generator 3 will be referred to as the electronic component 205. The electronic component 205 has the form of a rectangular parallelepiped chip, similar to the first electronic component 5 or the second electronic component 6 in the first embodiment.

[0139] Next, the structure of electronic component 205 will be described with reference to Fig. 20. Fig. 20 is a cross-sectional view showing electronic component 205.

[0140] The magnetic field generator 3 includes two first conductor layers 330A1 and 330A2 each made of a conductive material, instead of the first conductor layer 230A in the third embodiment. The shape of each of the first conductor layers 330A1 and 330A2 is similar to that of the first conductor layer 230A. The first conductor layers 330A1 and 330A2 are configured to generate a first magnetic field including a first magnetic field component applied to a portion of each of the first and second detection circuits 210 and 220 of the magnetic sensor 202. The first conductor layers 330A1 and 330A2 are connected in series or in parallel.

[0141] In addition, the magnetic field generator 3 includes two second conductor layers 330B1 and 330B2 each made of a conductive material, instead of the second conductor layer 230B in the third embodiment. The shape of each of the second conductor layers 330B1 and 330B2 is the same as the shape of the second conductor layer 230B. The second conductor layers 330B1 and 330B2 are configured to generate a second magnetic field including a second magnetic field component applied to the other parts of the first and second detection circuits 210 and 220 of the magnetic sensor 202, respectively. The second conductor layers 330B1 and 330B2 are connected in series or in parallel.

[0142] The electronic component 205 includes a substrate 341 and insulating layers 342, 343, 344, 345, 346, 347, 348, 349, and 350. The insulating layer 342 is disposed on the substrate 341. The first conductor layer 330A1 and the second conductor layer 330B1 are disposed on the insulating layer 342. The insulating layer 343 is disposed around the first conductor layer 330A1 and around the second conductor layer 330B1 on the insulating layer 342. The insulating layer 344 is disposed on the first conductor layer 330A1, the second conductor layer 330B1, and the insulating layer 343.

[0143] As described in the third embodiment, the first detection circuit 210 of the magnetic sensor 202 includes a plurality of MR elements 50A, a plurality of lower electrodes 61A, and a plurality of upper electrodes 62A. The second detection circuit 220 of the magnetic sensor 202 includes a plurality of MR elements 50B, a plurality of lower electrodes 61B, and a plurality of upper electrodes 62B. The plurality of lower electrodes 61A and the plurality of lower electrodes 61B are disposed on the insulating layer 344. The insulating layer 345 is disposed around the plurality of lower electrodes 61A and around the plurality of lower electrodes 61B on the insulating layer 344. The plurality of MR elements 50A are disposed on the plurality of lower electrodes 61A. The plurality of MR elements 50B are disposed on the plurality of lower electrodes 61B. The insulating layer 346 is disposed around the plurality of MR elements 50A and around the plurality of MR elements 50B on the plurality of lower electrodes 61A, the plurality of lower electrodes 61B, and the insulating layer 345.

[0144] The multiple upper electrodes 62A are disposed on the multiple MR elements 50A and the insulating layer 346. The multiple upper electrodes 62B are disposed on the multiple MR elements 50B and the insulating layer 346. The insulating layer 347 is disposed on the insulating layer 346 around the multiple upper electrodes 62A and around the multiple upper electrodes 62B.

[0145] The insulating layer 348 is disposed on the plurality of upper electrodes 62A, the plurality of upper electrodes 62B, and the insulating layer 347. The first conductor layer 330A2 and the second conductor layer 330B2 are disposed on the insulating layer 348. The insulating layer 349 is disposed on the insulating layer 348 around the first conductor layer 330A2 and the second conductor layer 330B2. The insulating layer 350 is disposed on the first conductor layer 330A2, the second conductor layer 330B2, and the insulating layer 349.

[0146] In this embodiment, the multiple MR elements 50A of the resistor parts R11, R12 of the first detection circuit 210 and the multiple MR elements 50B of the resistor parts R21, R22 of the second detection circuit 220 are disposed between the first conductor layer 330A1 and the first conductor layer 330A2. Note that the magnetic field generator 3 may include only one of the first conductor layer 330A1 and the first conductor layer 330A2.

[0147] In this embodiment, the multiple MR elements 50A of the resistor parts R13, R14 of the first detection circuit 210 and the multiple MR elements 50B of the resistor parts R23, R24 of the second detection circuit 220 are disposed between the second conductor layer 330B1 and the second conductor layer 330B2. The magnetic field generator 3 may include only one of the second conductor layers 330B1 and 330B2.

[0148] Other configurations, operations, and effects of the present embodiment are similar to those of the third embodiment.

[0149] [Fifth embodiment] Next, a fifth embodiment of the present invention will be described. First, a configuration of a current sensor system including a magnetic sensor device according to this embodiment will be described with reference to FIG. 21. A magnetic sensor device 401 according to this embodiment is used as a current sensor device that detects the value of a current to be detected flowing through a conductor. FIG. 21 shows an example in which a conductor through which a current to be detected flows is a bus bar 405. The magnetic sensor device 401 is disposed near the bus bar 405. Hereinafter, the current to be detected is referred to as a target current Itg. A magnetic field 406 is generated around the bus bar 405 by the target current Itg. The magnetic sensor device 401 is disposed at a position where the magnetic field 406 is applied.

[0150] Next, the configuration of a magnetic sensor device 401 according to this embodiment will be described with reference to Fig. 22. Fig. 22 is a cross-sectional view showing the magnetic sensor device 401. The magnetic sensor device 401 is a magnetic balance type current sensor device. As shown in Fig. 22, the magnetic sensor device 401 includes a magnetic sensor 402 and a magnetic field generator 403. The magnetic sensor 402 and the magnetic field generator 403 are integrated by a plurality of insulating layers, which will be described later. The magnetic sensor device 401 is independent of the bus bar 405 (see Fig. 21).

[0151] Here, as shown in Fig. 21 and Fig. 22, the X-direction, Y-direction, and Z-direction in this embodiment are defined. The X-direction, Y-direction, and Z-direction are mutually perpendicular. In this embodiment, the direction in which the target current Itg shown in Fig. 21 flows is defined as the Y-direction.

[0152] Here, the magnetic field 406 generated by the target current Itg that can be detected by the magnetic sensor 402 is referred to as a first magnetic field H1. The magnetic field generator 403 is for generating a second magnetic field H2 that offsets the first magnetic field H1. The magnetic sensor 402 is configured to detect a composite magnetic field of the first magnetic field H1 and the second magnetic field H2 as a target magnetic field that is a magnetic field to be detected (detection target magnetic field). The magnetic sensor 402 is also configured to generate a magnetic field detection value S according to the intensity of the target magnetic field. The first magnetic field H1 and the second magnetic field H2 are shown in FIG. 23, which will be described later.

[0153] In this embodiment, the direction of the first magnetic field H1, the direction of the second magnetic field H2, and the direction of the target magnetic field are parallel to the X-direction. The configuration of the magnetic sensor 402 will be described in detail later.

[0154] The magnetic field generator 403 includes a first conductor layer 430L and a second conductor layer 430U, each of which is made of a conductive material. The first and second conductor layers 430L, 430U are configured to generate a second magnetic field H2. As shown in FIG. 22, when viewed from the Z direction, the first and second conductor layers 430L, 430U are arranged to overlap with the magnetic sensor 402. The first and second conductor layers 430L, 430U are connected in series or in parallel.

[0155] Each of the first and second conductor layers 430L, 430U has a structure similar to that of the first conductor layer 30A. That is, the first conductor layer 430L includes a first end, a second end, a plurality of main wirings 431L provided between the first end and the second end and separated from each other, a first sub-wiring that electrically connects the first end and the plurality of main wirings 431L, and a second sub-wiring that electrically connects the second end and the plurality of main wirings 431L. The second conductor layer 430U includes a first end, a second end, a plurality of main wirings 431U provided between the first end and the second end and separated from each other, a first sub-wiring 432U that electrically connects the first end and the plurality of main wirings 431U, and a second sub-wiring that electrically connects the second end and the plurality of main wirings 431U. 22 shows the shapes of the multiple main wirings 431L and the multiple main wirings 431U as the shapes of the first and second conductor layers 430L, 430U. Note that the main wirings 431L, 431U, the first sub-wiring 432U, and the second sub-wiring 433L are shown in FIG. 23, which will be described later.

[0156] 22, the magnetic sensor device 401 further includes a substrate 441 and insulating layers 442, 443, 444, 445, and 446. The insulating layer 442 is disposed on the substrate 441. The first conductor layer 430L is disposed on the insulating layer 442. The insulating layer 443 is disposed around the first conductor layer 430L on the insulating layer 442. The insulating layer 444 is disposed on the first conductor layer 430L and the insulating layer 443.

[0157] The magnetic sensor 402 is disposed on the insulating layer 444. The insulating layer 445 is disposed so as to cover the magnetic sensor 402 and the insulating layer 444. The second conductor layer 430U is disposed on the insulating layer 445. The insulating layer 446 is disposed so as to cover the second conductor layer 430U and the insulating layer 445.

[0158] Next, a circuit connected to the magnetic sensor device 401 will be described with reference to FIG. 23. The magnetic sensor device 401 and a circuit connected to the magnetic sensor device 401 constitute a current sensor system 400. FIG. 23 is a block diagram showing a configuration of the current sensor system 400. As shown in FIG. 23, the current sensor system 400 includes the magnetic sensor device 401, a feedback circuit 470, and a current detector 480. The feedback circuit 470 controls a feedback current for generating a second magnetic field H2 according to the magnetic field detection value S, and causes the feedback current to flow to the magnetic field generator 403. The current detector 480 generates a detection value of the feedback current flowing to the magnetic field generator 403. The current detector 480 is, for example, a resistor inserted in a current path of the feedback current. The potential difference between both ends of this resistor corresponds to the detection value of the feedback current. Hereinafter, the detection value of the feedback current generated by the current detector 480 is referred to as a current detection value. The current detection value is proportional to the value of the target current Itg. Therefore, the current detection value corresponds to the detection value of the target current Itg.

[0159] The feedback circuit 470 includes a control circuit 471. The control circuit 471 generates a feedback current controlled in response to the magnetic field detection value S, and supplies the feedback current to the magnetic field generator 403.

[0160] Next, the configuration of the magnetic sensor 402 will be described in detail. The magnetic sensor 402 includes a plurality of magnetic detection elements. The magnetic detection elements may be, for example, MR elements or Hall elements. The MR elements may be spin-valve MR elements or AMR (anisotropic magnetoresistance) elements. In particular, in this embodiment, the magnetic sensor 402 includes a plurality of spin-valve MR elements 50 as a plurality of magnetic detection elements. The configuration of each of the plurality of MR elements 50 is the same as that of the first embodiment. Each of the plurality of MR elements 50 includes the magnetization pinned layer 52, the gap layer 53, and the free layer 54 described in the first embodiment. Each of the plurality of MR elements 50 may further include the antiferromagnetic layer 51 described in the first embodiment.

[0161] 24 is a circuit diagram showing a circuit configuration of the magnetic sensor 402. The magnetic sensor 402 includes four resistors R411, R412, R413, and R414, a power supply port V41, a ground port G41, two output ports E41 and E42, and a difference detector 410. The resistor R411 is provided between the power supply port V41 and the output port E41. The resistor R412 is provided between the output port E41 and the ground port G41. The resistor R413 is provided between the output port E42 and the ground port G41. The resistor R414 is provided between the power supply port V41 and the output port E42. A voltage or current of a predetermined magnitude is applied to the power supply port V41. The ground port G41 is connected to the ground.

[0162] Each of the resistors R211 to R214 includes at least one MR element 50. In FIG. 24, the solid arrows represent the magnetization direction of the magnetization fixed layer 52 in each of the resistors R411 to R414. In the example shown in FIG. 24, the magnetization direction of the magnetization fixed layer 52 in each of the resistors R411 to R414 is set so that the magnetic sensing direction of the magnetic sensor 402 is parallel to the X direction. The magnetization direction of the magnetization fixed layer 52 in each of the resistors R411 and R413 is the X direction. The magnetization direction of the magnetization fixed layer 52 in each of the resistors R412 and R414 is the −X direction. The free layer 54 in each of the resistors R411 to R414 has shape anisotropy in which the magnetization easy axis direction is parallel to the Y direction.

[0163] A magnetic field 406 generated by the target current Itg and a magnetic field generated by a magnetic field generator 403 are applied to the magnetic sensor 402. The magnetic sensor 402 is disposed at a position where the directions of the two applied magnetic fields are opposite or nearly opposite to each other, and is disposed in a position where the magnetic sensing direction is parallel or nearly parallel to the directions of the two applied magnetic fields.

[0164] In this example, the component in the magnetic sensing direction of the magnetic field generated by the target current Itg and applied to the magnetic sensor 402 is the first magnetic field H1. Also, the component in the magnetic sensing direction of the magnetic field generated by the magnetic field generator 403 and applied to the magnetic sensor 402 is the second magnetic field H2.

[0165] In the magnetic sensor 402, the potential difference between the output ports E41 and E42 changes depending on the intensity of the target magnetic field. The differential detector 410 outputs a signal corresponding to the potential difference between the output ports E41 and E42 as a magnetic field detection value S. Note that the intensity of the target magnetic field, the potential difference between the output ports E41 and E42, and the magnetic field detection value S can be positive or negative depending on the magnitude relationship between the first magnetic field H1 and the second magnetic field H2.

[0166] Other configurations, operations, and effects of the present embodiment are similar to those of the first embodiment.

[0167] [Sixth embodiment] Next, a sixth embodiment of the present invention will be described. In this embodiment, a magnetic field generator is configured to generate a magnetic field for inspecting a magnetic sensor. The magnetic sensor to be inspected may be the magnetic sensor 2 in the first embodiment, the magnetic sensor 202 in the third embodiment, or the magnetic sensor 402 in the fifth embodiment.

[0168] The configuration of the magnetic field generator in this embodiment may be the same as the configuration of the magnetic field generator 3 in the first embodiment, or may be the same as the configuration of the magnetic field generator 3 in the third embodiment. The magnetic field generator is configured to generate a magnetic field to be detected by the magnetic sensor (target magnetic field) as a magnetic field for inspection.

[0169] The magnetic field generator in this embodiment is separate from the magnetic sensor, and is disposed in a position and orientation that allows the magnetic field for inspection to be applied to the magnetic sensor. When the magnetic sensor to be inspected is the magnetic sensor 2 in the first embodiment, the magnetic field generator 3 in the first embodiment may be provided in addition to the magnetic field generator in this embodiment. When the magnetic sensor to be inspected is the magnetic sensor 2 in the third embodiment, the magnetic field generator 3 in the third embodiment may be provided in addition to the magnetic field generator in this embodiment.

[0170] Other configurations, operations, and effects of the present embodiment are similar to those of the first, third, or fifth embodiment.

[0171] The present invention is not limited to the above-described embodiments, and various modifications are possible. For example, the magnetic sensor device of the present invention may be configured such that the magnetic sensor, the magnetic field generator, and the processor are separate electronic components.

[0172] In addition, the magnetic sensor device 1 of the first embodiment may be configured so that the first magnetic field component of the first magnetic field is applied to both the first detection circuit 10 and the second detection circuit 20, and so that the second magnetic field component of the second magnetic field is applied to both the first detection circuit 10 and the second detection circuit 20.

[0173] The magnetic sensor device 1 according to the third embodiment may be a part of a position detection device that detects the position of an object moving in a predetermined direction. In this case, the magnetic sensor device 1 may be configured to detect a magnetic field generated by a magnet configured to change its relative position together with the object.

[0174] As described above, the magnetic sensor device of the present invention includes a magnetic sensor and a magnetic field generator configured to generate a magnetic field applied to the magnetic sensor. The magnetic field generator includes a conductor layer made of a conductive material. The conductor layer includes a first end, a second end, and a plurality of main wirings for generating a magnetic field, the main wirings being provided between the first end and the second end and separated from each other, a first sub-wiring that electrically connects the first end to the plurality of main wirings, and a second sub-wiring that electrically connects the second end to the plurality of main wirings.

[0175] The first sub-wiring includes a plurality of first paths extending from a first end to each of the plurality of main wirings. The second sub-wiring includes a plurality of second paths extending from a second end to each of the plurality of main wirings. Each of the plurality of first paths passes through a plurality of first coupling parts from which the first sub-wiring branches. Each of the plurality of second paths passes through a plurality of second coupling parts from which the second sub-wiring branches. Any two of the plurality of first paths pass through the same number of the plurality of first coupling parts. Any two of the plurality of second paths pass through the same number of the plurality of second coupling parts.

[0176] In the magnetic sensor device of the present invention, the number of the first coupling parts through which each of the first paths passes may be the same, and the number of the second coupling parts through which each of the second paths passes may be the same.

[0177] In the magnetic sensor device of the present invention, each of the first sub-wiring and the second sub-wiring may be configured by electrically connecting a plurality of wiring portions that do not branch. Each of the plurality of first connecting portions and the plurality of second connecting portions may include at least one specific connecting portion in which three wiring portions among the plurality of wiring portions are electrically connected. Both the plurality of first connecting portions and the plurality of second connecting portions may be specific connecting portions.

[0178] In the magnetic sensor device of the present invention, the number of the main wirings may be n, and the sum of the number of the first coupling parts and the number of the second coupling parts may be 2(n-1).

[0179] The magnetic sensor device of the present invention may further include a first electronic component including a magnetic sensor and a second electronic component including a magnetic field generator, or may further include an electronic component including a magnetic sensor and a magnetic field generator.

[0180] In the magnetic sensor device of the present invention, the magnetic sensor and the magnetic field generator may be stacked in a first direction. The magnetic sensor may include a plurality of magnetic detection elements. When viewed from the first direction, the plurality of magnetic detection elements may be disposed between the first sub-wiring and the second sub-wiring in a second direction perpendicular to the first direction.

[0181] In the magnetic sensor device of the present invention, each of the main wirings may be elongated in one direction and have one end closest to the first end and the other end closest to the second end. The potential difference between the one end and the other end of each of the main wirings may be the same.

[0182] Also, in the magnetic sensor device of the present invention, the conductor layer may include a plurality of paths that extend from the first end, pass through the first sub-wiring, the plurality of main wirings, and the second sub-wiring, and reach the second end, and each of the plurality of paths has the same length.

[0183] Also, in the magnetic sensor device of the present invention, the conductor layer may include a plurality of paths that extend from the first end, pass through the first sub-wiring, the plurality of main wirings, and the second sub-wiring, and reach the second end, and each of the plurality of paths has the same resistance value.

[0184] Also, in the magnetic sensor device of the present invention, the conductor layer may have a symmetric shape centered on a virtual plane that intersects the first end and the second end.

[0185] Also, in the magnetic sensor device of the present invention, the plurality of main wirings may include a first main wiring, a second main wiring, and a third main wiring that are adjacent to both sides of the first main wiring. The distance between the first main wiring and the second main wiring and the distance between the first main wiring and the third main wiring may be the same.

[0186] Also, in the magnetic sensor device of the present invention, the magnetic field may be used for measuring the sensitivity of the magnetic sensor. Alternatively, in the magnetic sensor device of the present invention, the magnetic sensor may include a magnetoresistive effect element. The magnetoresistive effect element may include a magnetic layer having a magnetization whose direction can be changed. The magnetic field may be used to set or reset the direction of magnetization of the magnetic layer.

[0187] The magnetic field generator of the present invention is configured to generate a magnetic field for inspection applied to the magnetic sensor. The magnetic field generator includes a conductor layer made of a conductive material. The conductor layer includes a first end, a second end, and a plurality of main wirings for generating a magnetic field, the plurality of main wirings being provided between the first end and the second end and separated from each other, a first sub-wiring that electrically connects the first end and the plurality of main wirings, and a second sub-wiring that electrically connects the second end and the plurality of main wirings.

[0188] The first sub-wiring includes a plurality of first paths extending from a first end to each of the plurality of main wirings. The second sub-wiring includes a plurality of second paths extending from a second end to each of the plurality of main wirings. Each of the plurality of first paths passes through a plurality of first coupling parts from which the first sub-wiring branches. Each of the plurality of second paths passes through a plurality of second coupling parts from which the second sub-wiring branches. Any two of the plurality of first paths pass through the same number of the plurality of first coupling parts. Any two of the plurality of second paths pass through the same number of the plurality of second coupling parts. [Explanation of symbols]

[0189] 1...magnetic sensor device, 2...magnetic sensor, 3...magnetic field generator, 4...processor, 5...first electronic component, 6...second electronic component, 10...first detection circuit, 20...second detection circuit, 30...conductor layer, 30A...first conductor layer, 30B...second conductor layer, 31, 31A, 31B...main wiring, 32, 32A, 32B...first sub-wiring, 33, 33A, 33B...second sub-wiring, 41...substrate, 42 to 46...insulating layer, 50, 50A, 50B...MR element, 51...antiferromagnetic layer, 52...magnetization fixed layer, 53...gap layer, 54...free layer, 61, 61 A, 61B...lower electrode, 62, 62A, 62B...upper electrode, 100...magnetic sensor system, 101...magnetic field generator, 311-318...main wiring, 3200-3214...wiring portion, 3221-3227...first connecting portion, 3300-3314...wiring portion, 3321-3327...second connecting portion, A10, A20...area, C...rotation axis, E11, E12, E21, E22...output port, G1, G2...ground port, MF...target magnetic field, PR...reference position, R11-R14, R21-R24...resistance portion, V1, V2...power supply port.

Claims

1. A magnetic sensor; a magnetic field generator configured to generate a magnetic field applied to the magnetic sensor, the magnetic field generator includes a conductor layer made of a conductive material; The conductor layer is A first end; A second end; a plurality of main wirings for generating the magnetic field, the main wirings being provided between the first end and the second end and separated from each other; a first sub-wiring that electrically connects the first end and the plurality of main wirings; a second sub-wiring that electrically connects the second end and the plurality of main wirings; the first sub-wiring includes a plurality of first paths extending from the first end to each of the plurality of main wirings; the second sub-wiring includes a plurality of second paths extending from the second end to each of the plurality of main wirings; each of the plurality of first paths passes through a plurality of first coupling portions from which the first sub-wiring branches; each of the plurality of second paths passes through a plurality of second coupling portions from which the second sub-wiring branches; any two of the first paths have the same number of the first coupling portions; The magnetic sensor device according to claim 1, wherein any two of the second paths pass through the same number of the second coupling portions.

2. the number of the first connection portions through which each of the first paths passes is the same; 2. The magnetic sensor device according to claim 1, wherein the number of the second coupling portions through which each of the second paths passes is the same for all of the second paths.

3. each of the first sub-wiring and the second sub-wiring is configured by electrically connecting a plurality of wiring portions that do not branch; The magnetic sensor device according to claim 1, characterized in that each of the plurality of first connecting portions and the plurality of second connecting portions includes at least one specific connecting portion to which three wiring portions of the plurality of wiring portions are electrically connected.

4. 4. The magnetic sensor device according to claim 3, wherein the plurality of first connecting portions and the plurality of second connecting portions are the specific connecting portions.

5. The magnetic sensor device according to claim 1, characterized in that the number of the main wirings is n, and the sum of the number of the first connecting portions and the number of the second connecting portions is 2(n-1).

6. a first electronic component including the magnetic sensor; 2. The magnetic sensor device according to claim 1, further comprising a second electronic component including the magnetic field generator.

7. 2. The magnetic sensor device of claim 1, further comprising an electronic component including the magnetic sensor and the magnetic field generator.

8. the magnetic sensor and the magnetic field generator are stacked in a first direction; the magnetic sensor includes a plurality of magnetic detection elements; The magnetic sensor device according to claim 1, characterized in that the multiple magnetic detection elements are arranged between the first sub-wiring and the second sub-wiring in a second direction perpendicular to the first direction when viewed from the first direction.

9. Each of the plurality of main wirings has a shape that is long in one direction, and has one end closest to the first end and the other end closest to the second end, 2. The magnetic sensor device according to claim 1, wherein the potential difference between the one end and the other end of each of the plurality of main wirings is the same.

10. The magnetic sensor device according to claim 1, characterized in that the conductor layer includes a plurality of paths each having the same length, extending from the first end through the first sub-wiring, the plurality of main wirings and the second sub-wiring to the second end.

11. The magnetic sensor device according to claim 1, characterized in that the conductor layer includes a plurality of paths extending from the first end through the first sub-wiring, the plurality of main wirings and the second sub-wiring to the second end, each of the paths having the same resistance value.

12. 2. The magnetic sensor device according to claim 1, wherein the conductor layer has a shape that is symmetrical with respect to a virtual plane that intersects with the first end and the second end.

13. the plurality of main wirings include a first main wiring, and a second main wiring and a third main wiring adjacent to both sides of the first main wiring; 2. The magnetic sensor device according to claim 1, wherein a distance between the first main wiring and the second main wiring and a distance between the first main wiring and the third main wiring are the same.

14. 14. The magnetic sensor device according to claim 1, wherein the magnetic field is used to measure the sensitivity of the magnetic sensor.

15. the magnetic sensor includes a magnetoresistance effect element, The magnetoresistance effect element includes a magnetic layer having a magnetization whose direction can be changed, 14. The magnetic sensor device according to claim 1, wherein the magnetic field is used to set or reset the direction of the magnetization of the magnetic layer.

16. A magnetic field generator configured to generate a test magnetic field to be applied to a magnetic sensor, comprising: the magnetic field generator includes a conductor layer made of a conductive material; The conductor layer is A first end; A second end; a plurality of main wirings for generating the magnetic field, the main wirings being provided between the first end and the second end and separated from each other; a first sub-wiring that electrically connects the first end and the plurality of main wirings; a second sub-wiring that electrically connects the second end and the plurality of main wirings; the first sub-wiring includes a plurality of first paths extending from the first end to each of the plurality of main wirings; the second sub-wiring includes a plurality of second paths extending from the second end to each of the plurality of main wirings; each of the plurality of first paths passes through a plurality of first coupling portions from which the first sub-wiring branches; each of the plurality of second paths passes through a plurality of second coupling portions from which the second sub-wiring branches; any two of the first paths have the same number of the first coupling portions; A magnetic field generator, characterized in that any two of the plurality of second paths pass through the same number of the plurality of second connecting portions.

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