Semiconductor processing device

Abstract

To provide a semiconductor processing device that is made lower in cost and also can prevent an adverse effect of heat on a seal material and a valve body.SOLUTION: A high temperature-tolerant vacuum gate valve 50 used for a semiconductor processing device 10 having a space part 12 where an object to be processed is processed, has: a valve box 54 which has a passing port 52 through which the object to be processed passes; a valve body 56 which can open and close the passing port 52; a seal material 62 which is provided in the valve body 56, and is pressed against the valve box 54 when the valve body 56 closes the passing port 52 to keep the space part 12 airtight; and a drive source 76 which drives the valve body 56, the drive source 76 consists of a ball screw 78 and a motor 80, and the valve body 56 opens and closes the passing port 52 by converting the drive force of the motor 80 into linear motion by the ball screw 78.SELECTED DRAWING: Figure 27

Description

Technical Field

[0001] The present invention relates to a high-temperature-resistant vacuum isolation valve used in a semiconductor processing apparatus, a semiconductor processing apparatus including the high-temperature-resistant vacuum isolation valve, and a method for blocking radiant heat of the high-temperature-resistant vacuum isolation valve.

Background Art

[0002] As a conventional vacuum heat treatment apparatus, for example, in each apparatus such as a vacuum annealing furnace, a high-temperature oxidation furnace, a high-temperature CVD furnace, and an epitaxial growth furnace, when a workpiece such as a silicon substrate is transferred from an atmospheric pressure environment into the processing chamber, in order not to contaminate the inside of the processing chamber, a load lock chamber is provided, and in a vacuum preparation chamber such as the load lock chamber, a process of evacuating or replacing with an inert atmosphere such as nitrogen gas to remove residual moisture and the like adhering to the workpiece is required. For this reason, for example, between the atmospheric pressure environment and the load lock chamber, and between the load lock chamber and the processing chamber, an isolation valve for partitioning the atmospheric pressure and the vacuum is provided.

[0003] Here, in semiconductor manufacturing using substrate materials such as silicon, GaN, and SiC, there are heat treatment, oxidation, nitridation, film formation, and etching process steps that span several hundred steps, and many of them are steps performed in a vacuum environment or an airtight environment. In the atmospheric pressure step, if impurities containing oxygen and moisture remain on the surface of the processing chamber and the workpiece, it may affect the process characteristics. Therefore, it is necessary to remove impurities from the surface of the workpiece inside a vacuum preparation chamber such as the load lock chamber. In this case, isolation valves are respectively installed between the atmospheric pressure environment side and the load lock chamber, and between the load lock chamber and the processing chamber, and the inside of the vacuum preparation chamber such as the load lock chamber is evacuated from the atmospheric pressure to the vacuum to remove moisture and the like remaining on the surface of the workpiece.

[0004] As shown in Patent Document 1, when a transfer chamber for transferring a workpiece from a load lock chamber to a plurality of processing chambers using a vacuum robot is connected, a large number of gate valves are required. Depending on the usage conditions of the gate valve, the atmosphere is affected by the pressure difference, environmental temperature, and in the case of CVD or etching, the type of material gas, resulting in film formation, erosion, etc. As a result, there are problems such as a yield loss in the product and a reduction in the product life of the gate valve. In order to prevent these problems, in addition to the pressure difference between atmospheric pressure and vacuum and heat leakage to the outside of the processing chamber, the gate valve requires technical measures to eliminate minute foreign matters.

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

Patent Document 2

Patent Document 3

Patent Document 4

Patent Document 5

Patent Document 6

Patent Document 7

Patent Document 8

Summary of the Invention

Problems to be Solved by the Invention

[0006] Incidentally, since the interior of the processing chamber reaches a high temperature of 800 to 2000°C, the heat energy received by the partition valve that partitions the processing chamber directly heats the valve body and the sealing material that constitute the partition valve. As a result, the sealing material with a low melting point melts, disappears or evaporates. Furthermore, depending on the material of the valve body, the valve body itself may deform or melt.

[0007] Therefore, in view of the above circumstances, an object of the present invention is to provide a semiconductor processing apparatus that can be realized at a low cost and can prevent adverse effects of heat on the sealing material and the valve body.

Means for Solving the Problems

[0008] A first invention is a semiconductor processing apparatus having a space portion for performing heat treatment on an object to be processed, a carry-out port through which the object to be processed can pass is formed in the space portion, a high-temperature resistant vacuum partition valve is provided at the carry-out port, the high-temperature resistant vacuum partition valve includes a valve box having a passage port through which the object to be processed passes, a valve body capable of opening and closing the passage port, a sealing material provided on the valve body and pressing against the valve box to maintain the airtightness of the space portion when the valve body closes the passage port, and a drive source for driving the valve body, the drive source is composed of a ball screw and a motor, the driving force of the motor is converted into a linear motion by the ball screw to open and close the passage port, a first radiant heat shielding portion that reflects radiant heat from the space portion is provided at a portion of the valve box where the sealing material abuts, a second radiant heat shielding portion that reflects radiant heat from the space portion is provided on the surface side of the valve body facing the space portion.

[0009] The first radiant heat shielding portion may be any of a metal film, an optical film, or opaque quartz that reflects the radiant heat.

[0010] The second radiant heat shielding portion may be any of a metal film, an optical film, or opaque quartz that reflects the radiant heat.

[0011] The second radiant heat shielding portion may be provided on a reflector that covers at least a part of the valve body and reflects the radiant heat.

Advantages of the Invention

[0012] According to the present invention, adverse effects of heat on the sealing material and the valve body can be prevented. In addition, since the driving of the valve body can be realized by using a ball screw and a motor, the cost of the device can be reduced.

Brief Description of the Drawings

[0013]

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Embodiments for Carrying Out the Invention

[0014] A high-temperature resistant vacuum isolation valve used in a semiconductor processing apparatus according to an embodiment of the present invention and a method for shielding radiant heat of the high-temperature resistant vacuum isolation valve will be described with reference to the drawings.

[0015] [Overall Configuration of Semiconductor Processing Apparatus] As shown in FIG. 1, the semiconductor processing apparatus 10 is an apparatus for accommodating a workpiece (for example, a silicon substrate, a semiconductor wafer, or a silicon wafer; not shown) in a space portion 12 formed inside the apparatus and heating the workpiece to perform heat treatment. The semiconductor processing apparatus 10 includes a base portion 14 on which the workpiece is placed, a lid portion 16 that covers the base portion 14 from above, and a peripheral wall portion 18 that surrounds the periphery of the base portion 14 and the lid portion 16. The space portion 12 surrounded by the base portion 14, the lid portion 16, and the peripheral wall portion 18 becomes an airtight space capable of blocking the workpiece from the atmosphere during heat treatment. In other words, the semiconductor processing apparatus 10 is also referred to as a heat treatment chamber. Further, the space portion 12 is also referred to as a processing space portion.

[0016] As shown in FIG. 2, the lid portion 16 includes a lid portion main body 20 and a heating source 22 disposed on the inner surface side of the lid portion main body 20. The heating source 22 is composed of a member that transmits light, for example, a halogen heater, and specifically, a quartz heater is used. As long as it is a member that transmits light, in addition to quartz, it may be composed of a glass-based, sapphire ceramic material, an acrylic resin, a plastic resin, a crystal material such as magnesium fluoride or calcium fluoride. Hereinafter, the quartz heater 22H will be described as an example of the heating source 22. In this case, the semiconductor processing apparatus 10 is referred to as a halogen heater container.

[0017] As shown in FIGS. 3 and 4, since the workpiece is formed in a disk shape in plan view, the quartz heater 22H is preferably formed in a circular and annular shape in plan view.

[0018] Here, the quartz heater 22H has a gap portion 24 that is partially discontinuous along the circumferential direction in plan view. This gap portion 24 is a non-light emitting portion 24N. For example, in the quartz heater shown in FIG. 4, four non-light emitting portions 24N are formed along the circumference, but the number is not limited to four.

[0019] Here, the quartz heater 22H has a plurality of circular and annular quartz heaters with different diameters arranged along the radial direction. In the quartz heater 22H with this arrangement structure, although there are a plurality of non-light-emitting portions 24N on a straight line along the radial direction, between the adjacent non-light-emitting portions 24N along the radial direction, a light-emitting portion 25B (see FIG. 4) of the quartz heater 22H is interposed. Note that the light-emitting portion 25B refers to a portion where the quartz tube of the quartz heater 22H exists.

[0020] As shown in FIG. 1, a reflection processing plate 26 is provided on the inner surface side of the lid body 20. By the reflection processing plate 26, the radiant heat emitted from the quartz heater 22H is reflected, avoiding heat transfer to the inside of the lid body 20. Thereby, heat damage due to fixed conduction heat to the lid body 20 can be prevented. It is not limited to the reflection processing plate 26, and a reflection processing film may be formed by coating the inner surface of the lid body 20.

[0021] Inside the lid body 20, a coolant flow path 28 for flowing a coolant is formed. By flowing the coolant through the coolant flow path 28, the entire lid portion 16 is cooled.

[0022] [Heating source holding mechanism] Next, a heating source holding mechanism used in the semiconductor processing apparatus will be described.

[0023] As shown in FIGS. 1 and 2, the quartz heater 22H is held by the lid portion 16. The lid portion 16 is formed with a mounting flange 30 extending in the vertical direction (gravity direction). Therefore, a recess 32 surrounded by the inner surface of the lid portion 16 and the mounting flange 30 is formed in the lid portion 16. The quartz heater 22H is located in this recess 32. Note that the reflection processing plate 26 is provided from the inner surface of the lid portion 16 to the mounting flange 30 and reflects radiant heat.

[0024] As shown in FIG. 5, the quartz heater 22H is composed of a first heater portion 23A extending in the horizontal direction and a second heater portion 23B connected to the first heater portion 23A and extending in the vertical direction (gravity direction). A through hole 34 penetrating in the thickness direction is formed in the lid body 20, and the second heater portion 23B of the quartz heater 22H is inserted into the through hole 34. For example, the second heater portion 23B is formed by bending perpendicularly to the first heater portion 23A, but they may be formed as separate members and connected to each other.

[0025] Therefore, as shown in FIGS. 3 and 4, the adjacent quartz heaters 22H in the circumferential direction are discontinuous at the portion of the second heater portion 23B, and a non-light emitting portion 24N is formed. Also, the separation distance between the first heater portions 23A of the adjacent quartz heaters 22H in the circumferential direction can be set to a minimum distance T (see FIG. 5), minimizing the non-light emitting portion 24N and avoiding an increase in the size of the semiconductor processing apparatus 10.

[0026] The second heater portion 23B of the quartz heater 22H is formed as a non-heating portion, for example.

[0027] As shown in FIG. 5, an airtight member 36 is disposed on the inner peripheral surface of the through hole 34 penetrating in the thickness direction of the lid body 20. The airtight member 36 holds the quartz heater 22H by pressing against the second heater portion 23B of the quartz heater 22H. The airtight member 36 is an elastic member, for example, and is composed of an O-ring. The O-ring is formed of an elastomer material. As the elastomer material, for example, bind rubber or fluororubber is used.

[0028] On the inner peripheral surface of the through hole 34, a compression ring 38 for pressing against the airtight member 36 and a retaining flange 40 for fixing the compression ring 38 to the lid body 20 are provided. Thereby, the airtight member 36 is fixed to the inner peripheral surface of the through hole 34.

[0029] On the upper side (atmospheric side) of the lid portion 16, a current introduction portion 42 that is connected to the second heater portion 23B of the quartz heater 22H protrudes. A voltage is applied to the current introduction portion 42, the first heater portion 23A of the quartz heater 22H generates heat, and the object to be processed is heated. Since the current introduction portion 42 is exposed to the atmospheric side, there is no heat transfer to the current introduction portion 42, and no technical problems due to heat generation occur.

[0030] [Radiation heat shielding treatment of the heat source holding mechanism] Next, a radiation heat shielding treatment for the heat source holding mechanism used in the semiconductor processing apparatus 10 will be described.

[0031] As shown in FIG. 7, in the vicinity of the quartz heater 22H, that is, at a position on the optical path where the light from the quartz heater 22H can irradiate the airtight member 36, a radiation heat shielding portion for shielding radiation heat is provided. For example, a radiation heat shielding portion for shielding radiation heat is provided at the contact portion between the outer surface of the quartz heater 22H and the airtight member 36. In other words, a metal film (metal reflection film) X1 as a radiation heat shielding portion is applied to the outer surface of the second heater portion 23B of the quartz heater 22H. The metal film X1 is composed of aluminum, aluminum alloy, silver, gold, nickel, etc., which have a high heat reflectivity and are difficult to absorb heat, either alone or by mixing any material. The radiation heat from the first heater portion 23A of the quartz heater 22H is reflected by the metal film X1, and heat transfer to the inside of the second heater portion 23B can be prevented. Therefore, the second heater portion 23B maintains its function as a non-heating portion.

[0032] In addition to the configuration in which the metal film (metal reflection film) X1 is applied to the outer surface of the second heater portion 23B of the quartz heater 22H, for example, the metal film X1 can be formed as a separate member and covered or wound around the outer surface of the second heater portion 23B of the quartz heater 22H.

[0033] As another embodiment, an optical film (optical filter film, infrared filter film, not shown) as a radiant heat shielding portion is applied to the outer surface of the second heater portion 23B of the quartz heater 22H. The radiant heat from the quartz heater 22H is reflected by the optical film, preventing heat transfer to the inside of the second heater portion 23B. Therefore, the second heater portion 23B maintains its function as a non-heating portion. As the optical film, for example, frosted glass, a material that diffusely reflects on quartz, a metal that is foamed to scatter light and changes the refractive index to prevent light transmission may be used.

[0034] Note that, as an alternative to the configuration of applying an infrared filter film (optical filter film) to the surface of the second heater portion 23B of the quartz heater 22H, for example, an infrared filter film can be formed as a separate member and placed over or wound around the surface of the second heater portion 23B of the quartz heater 22H.

[0035] As another embodiment, as shown in FIG. 8, the material of the second heater portion 23B of the quartz heater 22H is made of opaque quartz X2, the material of the first heater portion 23A is made of transparent quartz, and the ends of the opaque quartz X2 and the ends of the transparent quartz may be fused and connected. Although the connection portion between the end of the opaque quartz X2 and the end of the transparent quartz becomes transparent quartz, a radiant heat shielding portion can be formed in the second heater portion 23B. Thereby, the second heater portion 23B maintains its function as a non-heating portion.

[0036] Note that, as an alternative to configuring the material of the second heater portion 23B of the quartz heater 22H with opaque quartz X2, for example, a radiant heat reflecting member formed of opaque quartz X2 as a separate member can be made and placed over or wound around the outer surface of the second heater portion 23B of the quartz heater 22H.

[0037] Next, the operation of the radiant heat shielding process for the heat source holding mechanism used in the semiconductor processing apparatus 10 will be described.

[0038] As shown in FIGS. 5 to 8, in a configuration where the second heater portion 23B of the quartz heater 22H is inserted into the through hole 34 of the lid body 20 and the airtight member 36 contacts and holds the second heater portion 23B, the heating energy generated in the first heater portion 23A of the quartz heater 22H (see the arrow in FIG. 6) thermally propagates toward the second heater portion 23B, and the temperature of the second heater portion 23B becomes high. At this time, the heating energy also thermally propagates to the airtight member 36 that is in contact with the second heater portion 23B, and the temperature of the airtight member 36 becomes high.

[0039] Specifically, generally in quartz, heat energy can be radiated in the range of visible light from 400 nm to infrared light of 2700 nm. However, it has the property of transmitting in the radial direction (pipe cross-section direction) of the quartz tube centered on the heat source and also in the axial direction of the quartz tube. For this reason, in a configuration where the quartz heater 22H is supported vertically (in the direction of gravity) by the airtight member 36, the airtight member 36 is affected by the heat of visible light to infrared rays transmitted through the wall of the quartz tube. For this reason, the heating energy also thermally propagates to the airtight member 36 that is in contact with the second heater portion 23B and becomes hot. When this temperature reaches or exceeds the heat-resistant temperature of the airtight member 36, the airtight member 36 melts or burns out.

[0040] For these reasons, in the heat treatment in the semiconductor processing apparatus 10, the airtight member 36 becomes extremely hot, so that the airtight member 36 melts or carbonizes, and further its elasticity deteriorates. For this reason, a gap may be formed between the quartz heater 22H and the through hole 34 of the lid body 20, and there is a technical problem that heat escapes to the outside from the gap. When heat leakage to the outside occurs, the heat treatment of the object to be processed becomes insufficient, which causes defects. Also, when the airtight member 36 melts, the holding force for holding the quartz heater 22H becomes weak, and there is also a possibility that the quartz heater 22H may fall.

[0041] Therefore, in this embodiment, as shown in FIG. 7, a metal film (metal reflection film) X1 as a radiant heat shielding portion is applied to the outer surface of the second heater portion 23B of the quartz heater 22H. For this reason, since the heating energy generated in the first heater portion 23A of the quartz heater 22H is blocked by the metal film X1, heat is not conducted to the second heater portion 23B. Thereby, it is possible to prevent the temperature of the second heater portion 23B from becoming high. As a result, it is also possible to avoid the temperature of the airtight member 36 in contact with the second heater portion 23B from becoming high, and deterioration of the airtight member 36 can be prevented.

[0042] Since deterioration of the airtight member 36 can be prevented, the holding force of the second heater portion 23B by the airtight member 36 can be ensured. For this reason, heat leakage to the outside and dropping of the quartz heater 22H can be prevented.

[0043] Further, even in a configuration in which an infrared filter film (optical filter film) as a radiant heat shielding portion is applied to the outer surface of the second heater portion 23B of the quartz heater 22H using a metal, a dielectric material, or the like, the same operation can be obtained.

[0044] As shown in FIG. 8, even when the material of the second heater portion 23B of the quartz heater 22H is formed of opaque quartz X2, the same operation can be obtained.

[0045] [High-temperature resistant vacuum valve and radiant heat shielding method for high-temperature resistant vacuum valve] Next, the details of the configuration of the high-temperature resistant vacuum valve attached to the semiconductor processing apparatus and the radiant heat shielding method for the high-temperature resistant vacuum valve will be described. The high-temperature resistant vacuum valve and the radiant heat shielding method for the high-temperature resistant vacuum valve are mainly divided into three embodiments. Hereinafter, they will be described separately as a first embodiment, a second embodiment, and a third embodiment.

[0046] [First Embodiment] The high-temperature resistant vacuum valve and the radiant heat shielding method for the high-temperature resistant vacuum valve according to the first embodiment have a configuration in which a reflector is provided in the high-temperature resistant vacuum valve. The "reflector" is also referred to as a radiation shield (hereinafter the same).

[0047] As shown in FIG. 9, a high-temperature-resistant vacuum isolation valve 50 is provided in the semiconductor processing apparatus 10. The high-temperature-resistant vacuum isolation valve 50 is preferably disposed on the atmospheric pressure environment side of the semiconductor processing apparatus 10. Specifically, an outlet 11 through which the object to be processed can pass is formed in the side wall of the semiconductor processing apparatus 10. The high-temperature-resistant vacuum isolation valve 50 is provided so as to communicate with the outlet 11.

[0048] The high-temperature-resistant vacuum isolation valve 50 includes a valve box 54 having a passage port 52 communicating with the outlet 11, a valve body 56 capable of opening and closing the passage port 52 of the valve box 54, and a sealing material 62 provided at the tip of the valve body 56 and pressing against an inner wall 60 located on the outer cylinder 58 of the valve box 54 when the valve body 56 closes (shuts) the passage port 52 of the valve box 54.

[0049] The outer cylinder 58 constitutes at least a part of the valve box 54. The inner wall 60 constitutes at least a part of the outer cylinder 58.

[0050] The sealing material 62 is made of, for example, an elastomer material, rubber, etc. The sealing material 62 may be made of the same material as other sealing materials used in general semiconductor manufacturing apparatuses.

[0051] Inside the valve body 56 shown in FIGS. 10 to 14, a cooling mechanism is not arranged, and a refrigerant such as cooling water does not flow (circulate). This reduces the possibility of the refrigerant such as cooling water leaking and entering the space portion 12 of the semiconductor processing apparatus 10 to zero.

[0052] Here, as shown in FIG. 9, in the space portion 12 of the semiconductor processing apparatus 10, the temperature reaches 800 to 2000 ° C. during the processing of the object to be processed. Therefore, the thermal energy received by the high-temperature-resistant vacuum isolation valve 50 that partitions the space portion 12 directly heats the valve body 56 and the sealing material 62 that constitute the high-temperature-resistant vacuum isolation valve 50. As a result, the sealing material 62 with a low melting point melts, disappears or evaporates. Furthermore, depending on the material of the valve body 56, the valve body may deform and melt. In the present embodiment, these technical problems can be solved.

[0053] As shown in FIG. 10, the valve box 54 is provided with a retraction portion 64 for the valve body 56 to retract. The retraction portion 64 is, for example, a space portion in which the valve body 56 is housed. When the passage port 52 of the valve box 54 is opened (released), the valve body 56 is in a state of being located in the retraction portion 64. On the other hand, when the passage port 52 of the valve box 54 is closed, the valve body 56 is sent out from the retraction portion 64 and is in a state of being located so as to block the passage port 52. Further, when the valve body 56 moves to a position where it blocks the passage port 52, the sealing material 62 is pressed against the inner wall 60 of the outer cylinder 58 of the valve box 54 and is in an elastically deformed state. Thereby, the airtightness of the space portion 12 is realized.

[0054] Note that, although not shown, a drive source for driving the valve body 56 is a motor, a cylinder (air or hydraulic pressure), or the like.

[0055] A recess 66 is formed on the surface of the valve body 56 exposed on the space portion 12 side in a side view (see FIG. 10). Further, a reflecting plate 68 as a radiant heat blocking portion for reflecting radiant heat is disposed so as to cover the recess 66 of the valve body 56. For this reason, the reflecting plate 68 covers at least a part of the surface of the valve body 56 exposed on the space portion side.

[0056] A recess 66 is located between the valve body 56 and the reflecting plate 68, and a predetermined gap 70 is formed. This gap 70 is preferably set to a depth such that when the valve body 56 blocks the passage port 52 as shown in FIG. 10(A), the separation distance between the valve body 56 and the reflecting plate 68 is, for example, 1 mm or more. Further, as shown in FIG. 10(B), when the valve body 56 opens the passage port 52, an interval may be provided such that the separation distance between the valve body 56 and the reflecting plate 68 is, for example, 1 mm or more, or there may be no interval.

[0057] As shown in Fig. 10(B), when the valve body 56 is housed in the retracted portion 64, the reflector 68 enters the gap 70 of the recess 66. As a result, the valve body 56 can be housed in the retracted portion 64 without the reflector 68 interfering with a part of the valve box 54. On the other hand, as shown in Fig. 10(A), when the valve body 56 exits from the retracted portion 64 and blocks the passage port 52, the sealing material 62 is pressed against the inner wall 60 of the outer cylinder 58 of the valve box 54, and the space portion 12 (see Fig. 9) is sealed. In this state, a predetermined gap 70 is formed between the reflector 68 and the valve body 56.

[0058] Although not shown in the figure, a mechanism or structure for the reflector 68 to enter the gap 70 of the recess 66 may use, for example, a link mechanism or a slide mechanism.

[0059] The valve body 56, the reflector 68, the link mechanism (not shown), and the slide mechanism (not shown) are preferably formed of a metal, a ceramic material, or other materials having a high melting point that can withstand the processing temperature of the object to be processed. These materials mean materials having a melting point higher than the heating temperature of the heating source 22. Materials used for the partition valve provided in the conventional semiconductor processing apparatus can be used.

[0060] When the reflector 68 is formed of a ceramic material, for example, it is preferable to perform polishing or the like on the ceramic material to increase the reflectivity.

[0061] As a result, when the processing of the object to be processed is being executed, as shown in Fig. 10(A), the valve body 56 closes the passage port 52 and the space portion 12 is in a sealed state. However, the thermal energy from the heating source 22 is reflected by the reflector 68 even when irradiated on the reflector 68, and it is difficult to transfer heat to the valve body 56 side. In particular, since a gap 70 is formed between the reflector 68 and the valve body 56, the heat received by the reflector 68 is difficult to be transferred to the valve body 56 side due to the gap 70, and the heat is diffused in the process of passing through the gap 70 by the air flow.

[0062] Here, the recess 66 formed in the valve body 56 is not limited to only one surface of the valve body 56. For example, as shown in FIG. 11, there may also be a structure in which the recess 66 is formed on both surfaces of one side and the other side of the valve body 56. Specifically, when the space for heat-treating the object to be processed is provided on both the one side and the other side of the valve body 56, heat energy from the space 70 is irradiated onto both the one side and the other side of the valve body 56. In this configuration, the recesses 66 are formed on both surfaces of one side and the other side of the valve body 56, and the reflecting plates 68 covering the respective recesses 66 are installed. When the valve body 56 blocks the passage port 52, a predetermined gap 70 is formed between the one surface of the valve body 56 and the reflecting plate 68. Also, if a predetermined gap 70 is formed between the other surface of the valve body 56 and the reflecting plate 68, the heat energy from the space 12 can be blocked by the reflecting plate 68, and the valve body 56 can be prevented from being irradiated with heat energy.

[0063] In addition, a configuration in which the recess 66 is not formed on the surface of the valve body 56 can also be adopted. For example, as shown in FIG. 12, the reflecting plate 68 is disposed on the surface of the valve body 56 exposed on the side of the space 12, and the reflecting plate 68 is fixed to the valve body 56 side by the arm member 72. The arm member 72 is preferably formed of a metal, a ceramic material, or other material having a melting point higher than the temperature of the heat source 22.

[0064] In the configuration where the reflecting plate 68 is fixed to the valve body 56 side by the arm member 72, even when the valve body 56 is housed in the retracted portion 64, the reflecting plate 68 does not approach the valve body side. Even when the valve body 56 blocks the passage port 52, the separation distance between the valve body 56 and the reflecting plate 68 does not change. Therefore, a mechanism for moving the reflecting plate 68 to change the separation distance between the reflecting plate 68 and the valve body 56 becomes unnecessary, and the number of parts can be reduced. Along with this, the durability of the valve body 56 increases and the maintenance efficiency improves.

[0065] As shown in FIG. 13, arm members 72 may be provided on both the one side and the other side of the valve body 56, and the reflecting plates 68 may be disposed on both sides.

[0066] As described above, by reflecting the radiant heat with the reflector 68, the temperature rise of the valve body 56 can be suppressed, and the temperature of the valve body 56 can be controlled to be equal to or lower than the melting point of the sealing material 62. Further, the heat transfer effect from the valve body 56 to the sealing material 62 disposed at the tip of the valve body 56 is weakened, and the temperature rise of the sealing material 62 is suppressed. As a result, the temperature of the sealing material 62 becomes equal to or lower than the melting point, and it is possible to prevent the sealing material 62 from melting or disappearing.

[0067] Next, a configuration (improved example) for further improving the radiant heat blocking function for the valve body will be described.

[0068] As shown in FIGS. 14 to 17, a reflector 68 is disposed near the valve body 56, and a metal film (metal reflection film) X1 as a radiant heat blocking portion for reflecting radiant heat is applied to the surface exposed on the space portion 12 side of the reflector 68. The metal film X1 is made of aluminum, aluminum alloy, silver, gold, nickel, etc., which have a high heat reflectivity and are difficult to absorb heat, either alone or by mixing any material. The radiant heat from the space portion 12 is reflected by the metal film X1, and heat transfer to the reflector 68 can be prevented.

[0069] In addition to the configuration in which the metal film (metal reflection film) X1 is applied to the reflector 68, for example, the metal film X1 can be formed as a separate member and covered or wound around the outer surface of the reflector 68.

[0070] Also, as another embodiment, an optical film (optical filter film, infrared filter film) X3 as a radiant heat blocking portion for reflecting radiant heat is applied to the outer surface of the reflector 68. The radiant heat from the space portion 12 is reflected by the optical film X3, and heat transfer to the reflector 68 can be prevented. As the optical film X3, for example, cloudy glass, a material that diffusely reflects quartz, a metal that is foamed to scatter light and changes the refractive index to prevent light transmission may be used.

[0071] Note that, as an alternative to the configuration in which an infrared filter film (optical filter film) is applied to the surface of the reflector 68, for example, it is also possible to form the infrared filter film as a separate member and cover or wind it around the surface of the reflector 68.

[0072] Furthermore, as another embodiment, at least a part of the material of the reflector 68 may be made of opaque quartz X2. Thereby, a radiant heat shielding portion can be formed on the reflector 68.

[0073] Note that, as an alternative to configuring at least a part of the material of the reflector 68 with opaque quartz X2, for example, it is also possible to create a radiant heat reflecting member formed of opaque quartz X2 as a separate member and cover or wind the radiant heat reflecting member around the outer surface of the reflector 68.

[0074] The effects of the metal film, optical film, and opaque quartz applied to the surface of the reflector 68 are the same radiant heat shielding effects as the effects described in the form in which these are applied to the heat source 22 (as described above), so the description is omitted here.

[0075] [Second Embodiment] The high-temperature resistant vacuum valve of the second embodiment and the radiant heat shielding method of the high-temperature resistant vacuum valve have a configuration in which a refrigerant flows (circulates) inside the high-temperature resistant vacuum valve. Note that components overlapping with those of the first embodiment are denoted by the same reference numerals, and the description thereof is appropriately omitted.

[0076] As shown in FIG. 18, inside the valve body 56, a flow path 74 through which a refrigerant such as cooling water flows is arranged. Similarly, flow paths 74 through which a refrigerant such as cooling water flows are also arranged in the outer cylinder 58 of the valve box 54 and the storage wall 76 near the retracted portion. By the refrigerant flowing (circulating) through the flow path 74, the valve body 56 and the valve box 54 are cooled and maintained at a temperature below the melting point of the sealing material 62.

[0077] The refrigerant is, for example, cooling water.

[0078] As shown in FIG. 19, a metal film (metal reflection film) X1 as a radiant heat shielding part for reflecting radiant heat is applied to the exposed surface of the valve body 56 that is exposed to the space part 12. The metal film X1 is made of aluminum, aluminum alloy, silver, gold, nickel, etc., which have a high heat reflectivity and are difficult to absorb heat, either alone or by mixing any materials. The metal film X1 can reflect the radiant heat from the space part 12 and prevent heat transfer to the valve body 56.

[0079] In addition to the configuration of applying the metal film (metal reflection film) X1 to the valve body 56, for example, it is also possible to form the metal film X1 as a separate member and attach it to the exposed surface of the valve body 56.

[0080] Also, as another embodiment, an optical film (optical filter film, infrared filter film) X3 as a radiant heat shielding part for reflecting radiant heat is applied to the exposed surface of the valve body 56. The optical film X3 can reflect the radiant heat from the space part 12 and prevent heat transfer to the valve body 56. As the optical film X3, for example, cloudy glass, a material that diffusely reflects on quartz, a metal that is foamed to cause light scattering and changes the refractive index to prevent light transmission may be used.

[0081] In addition to the configuration of applying the infrared filter film (optical filter film) to the exposed surface of the valve body 56, for example, it is also possible to form the infrared filter film as a separate member and attach it to the exposed surface of the valve body 56.

[0082] Furthermore, as another embodiment, at least a part of the material of the exposed surface of the valve body 56 may be composed of opaque quartz X2. Thereby, a radiant heat shielding part can be formed on the exposed surface of the valve body 56.

[0083] In addition to the configuration of composing at least a part of the material of the exposed surface of the valve body 56 with opaque quartz X2, for example, it is also possible to make a radiant heat reflecting member formed of opaque quartz X2 as a separate member and attach the radiant heat reflecting member to the exposed surface of the valve body 56.

[0084] Also, similarly, on the inner wall 60 of the outer cylinder 58 of the valve box 62 where the sealing material 62 abuts, a metal film (metal reflection film) X1 as a radiant heat shielding portion for reflecting radiant heat is applied. The metal film X1 is made of aluminum, aluminum alloy, silver, gold, nickel, etc., which have a high heat reflectivity and are difficult to absorb heat, either alone or by mixing any materials. The metal film X1 reflects the radiant heat from the space portion 12 and can prevent heat transfer to the outer cylinder 58.

[0085] In addition, as an alternative to the configuration of applying the metal film (metal reflection film) X1 to the outer cylinder 58, for example, the metal film X1 can be formed as a separate member and attached to the portion of the inner wall 60 of the outer cylinder 58 of the valve box 54 where the sealing material 62 abuts.

[0086] Also, on the inner wall 60 of the outer cylinder 58 of the valve box 54 where the sealing material 62 abuts, an optical film (optical filter film, infrared filter film) X3 as a radiant heat shielding portion for reflecting radiant heat is applied. The optical film X3 reflects the radiant heat from the space portion 12 and can prevent heat transfer to the outer cylinder 58. As the optical film X3, for example, cloudy glass, a material that diffusely reflects on quartz, a metal that is foamed to scatter light and changes the refractive index to prevent light transmission may be used.

[0087] In addition, as an alternative to the configuration of applying the infrared filter film (optical filter film) to the portion of the inner wall 60 of the outer cylinder 58 of the valve box 54 where the sealing material 62 abuts, for example, the infrared filter film can be formed as a separate member and attached to the portion of the inner wall 60 of the outer cylinder 58 of the valve box 54 where the sealing material 62 abuts.

[0088] Furthermore, as another embodiment, at least a part of the material of the portion of the inner wall 60 of the outer cylinder 58 of the valve box 54 where the sealing material 62 abuts may be made of opaque quartz X2. Thereby, a radiant heat shielding portion can be formed at the portion of the inner wall 60 of the outer cylinder 58 of the valve box 54 where the sealing material 62 abuts.

[0089] In addition to configuring at least a part of the material of the inner wall 60 of the outer cylinder 58 of the valve box 54 where the sealing material 62 abuts with the opaque quartz X2, for example, a radiation heat reflecting member formed of the opaque quartz X2 as a separate member can be made, and the radiation heat reflecting member can be attached to the inner wall 60 of the outer cylinder 58 of the valve box 54 where the sealing material 62 abuts.

[0090] As described above, the temperature of the part where the sealing material 62 contacts the valve body 56 and the outer cylinder 58 of the valve box 54 can be controlled to be equal to or lower than the melting point of the sealing material 62. In other words, the heat transfer effect from the valve body 56 and the outer cylinder to the sealing material 62 disposed at the tip of the valve body 56 becomes weak, and the temperature rise of the sealing material 62 is suppressed. As a result, the temperature of the sealing material 62 becomes equal to or lower than the melting point, and it is possible to prevent the sealing material 62 from melting or disappearing.

[0091] Note that even in a configuration where no flow path 74 through which a refrigerant such as cooling water flows is arranged in the valve body 56 and the valve box 54, a radiation heat blocking portion that reflects radiation heat may be formed in the valve body 56 and the valve box 54.

[0092] Even in a configuration where no radiation heat blocking portion that reflects radiation heat is formed in the valve body 56 and the valve box 54, a configuration in which a flow path 74 through which a refrigerant such as cooling water flows is arranged in the valve body 56 and the valve box 54 may be adopted.

[0093] Further, the sealing material 62 may contain a metal (not shown). By including a metal in the sealing material 62, the thermal conductivity of the sealing material 62 itself is improved. In particular, since the material forming the sealing material 62 contains a metal, when the sealing material 62 contacts the inner wall 60 of the outer cylinder 58 of the valve box 54, the thermal conductivity between the sealing material 62 and the outer cylinder 58 of the valve box 54 and between the sealing material 62 and the valve body 56 becomes high, and the amount of heat accumulated in the sealing material 62 can be quickly transferred to the valve box 54 and the valve body 56. In addition, in a configuration where the metal is exposed on the surface of the sealing material 62, heat dissipation from the sealing material 62 to the air proceeds smoothly due to the effect of so-called cooling fins. As a result, the temperature of the sealing material 62 can be maintained below the melting point, so that the sealing material 62 does not melt or disappear.

[0094] [Third Embodiment] The high-temperature-resistant vacuum isolation valve of the third embodiment and the method for blocking radiant heat of the high-temperature-resistant vacuum isolation valve employ a drive source for realizing low cost. In addition, a configuration including a reflector plate in the high-temperature-resistant vacuum isolation valve, a configuration including a radiant heat shielding portion, and a configuration in which a refrigerant flows (circulates) inside the high-temperature-resistant vacuum isolation valve are also appropriately provided. The same components as those in the configurations of the first embodiment and the second embodiment are denoted by the same reference numerals, and the description thereof is omitted as appropriate.

[0095] As shown in FIGS. 20 and 21, the high-temperature-resistant vacuum isolation valve 50 includes a valve box 54 having a through port 52 communicating with a carry-out port 11 (see FIG. 9), a valve body 56 capable of opening and closing the through port 52 of the valve box 54, a sealing material 62 provided at the tip of the valve body 56 and pressing against an inner wall 60 located on the outer cylinder 58 of the valve box 54 when the valve body 56 closes (closes) the through port 52 of the valve box 54, and a drive source 76 for driving the valve body 56 to open and close the through port 52.

[0096] The outer cylinder 58 constitutes at least a part of the valve box 54. The inner wall 60 constitutes at least a part of the outer cylinder 58.

[0097] The sealing material 62 is made of, for example, an elastomer material, rubber, or the like. The sealing material 62 may be made of the same material as other sealing materials used in general semiconductor manufacturing apparatuses.

[0098] Here, as the drive source 76, a ball screw 78 and a motor 80 are used. Conventionally, an air actuator has been used as the drive source for the valve body 56, but it was costly and unreasonable. Therefore, in the third embodiment, as described above, instead of an air actuator, a ball screw 78 and a motor 80 are employed as the drive source 76 for applying a driving force to the valve body 56. Here, the principle of a ball screw actuator 82 (see FIG. 29) is utilized.

[0099] The motor 80 can use motors such as a direct motor or a stepping motor. By converting the rotational driving force of the motor 80 into the linear motion of the ball screw 78, the linear motion of the valve body 56 is realized, enabling the opening and closing operation of the passage port 52.

[0100] As shown in FIG. 29, the ball screw actuator 82 includes a motor 80, a coupling 84 attached to the motor 80, a screw shaft 86 that is rotationally driven by the driving force of the motor 80, a nut (or housing) 88 that is arranged around the screw shaft and moves linearly, and a bearing 90 that rotatably supports the screw shaft 86.

[0101] When the ball screw actuator 82 is applied to this embodiment, as shown in FIGS. 20 and 21, for example, the motor 80 is fixed to the valve box 54. The screw shaft 86 extends linearly toward the inside of the passage port 52 through the coupling 84 connected to the motor 80. A bearing 88 is arranged inside the valve box 54 to enable the rotational driving of the screw shaft 86. A nut 88 is attached to the tip of the screw shaft 86. The nut 88 is fixed to the valve body 56. Further, a guide 92 for supporting the movement of the valve body 56 is arranged in the passage port 52. The present invention is not limited to these detailed configurations, and a conventional drive mechanism can be appropriately adopted as long as it can convert the rotational driving force of the motor 80 into linear motion by the ball screw 78.

[0102] In this embodiment, the ball screw 78 is composed of a screw shaft 86, a nut 88, a ball (not shown), etc.

[0103] As described above, according to the third embodiment, when the motor 80 rotates and drives, the screw shaft 86 rotates, and the valve body 56 moves linearly together with the nut 88. Thereby, the opening and closing operation of the passage port 52 by the valve body 56 becomes possible. As a result, compared with the case of using a conventional air actuator, the manufacturing cost of the high-temperature resistant vacuum partition valve 50 can be reduced.

[0104] Note that the sealing material 62 may contain a metal.

[0105] Next, an improved example for enhancing the radiation heat shielding effect of the high-temperature resistant vacuum isolation valve of the third embodiment will be described.

[0106] As shown in FIGS. 22 and 23, the surface side of the valve body 56 faces the space portion 12 side of the semiconductor processing apparatus 10 (see FIG. 9). A metal film (metal reflection film) X1 as a radiation heat shielding portion for reflecting radiation heat is applied to the surface side of the valve body 56. The metal film X1 is made of aluminum, aluminum alloy, silver, gold, nickel, etc., which have a high heat reflectivity and are difficult to absorb heat, either alone or by mixing any materials. The radiation heat from the space portion 12 is reflected by the metal film X1, and heat transfer to the valve body 56 can be prevented.

[0107] In addition to the configuration of applying the metal film (metal reflection film) X1 to the valve body 56, for example, the metal film X1 can also be formed as a separate member and covered or wound around the outer surface of the valve body 56.

[0108] Also, it is preferable to apply a metal film (metal reflection film) X1 to the inner wall 60 of the outer cylinder 56, in other words, the inner peripheral surface of the passage port 52, in the same manner.

[0109] Also, an optical film (optical filter film, infrared filter film) X3 as a radiation heat shielding portion for reflecting radiation heat may be applied to the outer surface of the valve body 56 instead of the metal film (metal reflection film) X1. The radiation heat from the space portion 12 is reflected by the optical film X3, and heat transfer to the valve body 56 can be prevented. As the optical film X3, for example, clouded glass, a material that diffusely reflects on quartz, a metal that is foamed to cause light scattering and changes the refractive index to prevent light transmission may be used.

[0110] In addition to the configuration of applying the infrared filter film (optical filter film) to the surface of the valve body 56, for example, the infrared filter film can also be formed as a separate member and covered or wound around the surface of the valve body 56.

[0111] Further, the outer surface of the valve body 56 may be made of opaque quartz X2 instead of the metal film (metal reflective film) X1. By forming at least a part of the material of the valve body 56 with opaque quartz X2, a radiant heat shielding portion can be formed on the valve body 56.

[0112] In addition to forming at least a part of the material of the valve body 56 with opaque quartz X2, for example, a radiant heat reflective member formed of opaque quartz X2 can be made as a separate member, and the outer surface of the valve body 56 can be covered or wound with the radiant heat reflective member.

[0113] The effects of the metal film, optical film, and opaque quartz applied to the surface of the valve body 56 are the same radiant heat shielding effects as the effects described in the form in which these are applied to the heat source 22 (as described above), so the description is omitted here.

[0114] As shown in FIGS. 24 and 25, on the surface of the valve body 56 exposed on the space portion 12 side, a reflector 68 as a radiant heat shielding portion that reflects radiant heat is disposed so as to cover the valve body 56 in a side view (see FIGS. 24 and 25). For this reason, the reflector 68 covers at least a part of the surface of the valve body 56 exposed on the space portion side.

[0115] The valve body 56 and the reflector 68 are preferably formed of a metal, ceramic material, or other material having a high melting point that can withstand the processing temperature of the object to be processed. These materials mean materials having a melting point higher than the heating temperature of the heat source 22. Materials used for the shut-off valve provided in the conventional semiconductor processing apparatus can be used.

[0116] When the reflector 68 is formed of a ceramic material, for example, it is preferable to perform polishing or the like on the ceramic material to increase the reflectivity.

[0117] Next, a method for shielding radiant heat with respect to the reflector 68 will be described.

[0118] As shown in FIGS. 24 and 25, a metal film (metal reflection film) X1 as a radiant heat shielding portion for reflecting radiant heat is applied to the surface of the reflector 68 that is exposed on the space portion 12 side. The metal film X1 is composed of aluminum, aluminum alloy, silver, gold, nickel, etc., which have a high heat reflectivity and are difficult to absorb heat, either alone or by mixing any materials. The metal film X1 reflects the radiant heat from the space portion 12 and can prevent heat transfer to the reflector 68.

[0119] In addition to the configuration in which the metal film (metal reflection film) X1 is applied to the reflector 68, for example, it is also possible to form the metal film X1 as a separate member and cover or wind it around the outer surface of the reflector 68.

[0120] Also, an optical film (optical filter film, infrared filter film) X3 as a radiant heat shielding portion for reflecting radiant heat may be applied to the outer surface of the reflector 68 instead of the metal film X1. The optical film X3 reflects the radiant heat from the space portion 12 and can prevent heat transfer to the reflector 68. As the optical film X3, for example, cloudy glass, a material that diffusely reflects on quartz, a metal that is foamed to scatter light, or a metal that changes the refractive index to prevent light transmission may be used.

[0121] In addition to the configuration in which the infrared filter film (optical filter film) is applied to the surface of the reflector 68, for example, it is also possible to form the infrared filter film as a separate member and cover or wind it around the surface of the reflector 68.

[0122] Furthermore, at least a part of the material of the reflector 68 may be composed of opaque quartz X2 instead of the metal film X1 on the outer surface of the reflector 68. Thereby, a radiant heat shielding portion can be formed on the reflector 68.

[0123] In addition to the configuration in which at least a part of the material of the reflector 68 is composed of opaque quartz X2, for example, it is also possible to make a radiant heat reflecting member formed of opaque quartz X2 as a separate member and cover or wind the radiant heat reflecting member around the outer surface of the reflector 68.

[0124] The effects of the metal film, optical film, and opaque quartz applied to the surface of the reflector 68 are the same as the radiation heat shielding effects described in the form in which they are applied to the heat source 22 (as described above), so the description is omitted here.

[0125] Next, a configuration in which a refrigerant is caused to flow (circulate) inside the high-temperature resistant vacuum shut-off valve 50 may be adopted.

[0126] As shown in FIGS. 26 to 28, a flow path 74 through which a refrigerant such as cooling water flows is arranged inside the valve body 56. Similarly, a flow path 74 through which a refrigerant such as cooling water flows is also arranged in the outer cylinder 58 of the valve box 54. By causing the refrigerant to flow through the flow path 74, the valve body 56 and the valve box 54 are cooled and maintained at a temperature below the melting point of the sealing material 62.

[0127] The refrigerant is, for example, cooling water.

[0128] According to the third embodiment, the high-temperature resistant vacuum shut-off valve 50 can be manufactured at low cost, and even when receiving heat (heat transfer effect) from the space portion 12 of the semiconductor processing apparatus 10 (see FIG. 9) due to the synergistic function of the radiation heat shielding portion and the refrigerant, the increase in the temperature of the high-temperature resistant vacuum shut-off valve 50 can be effectively suppressed.

[0129] Note that the ball screw 78 and the motor 80 employed as the drive source of the valve body 56 in the third embodiment may be applied as the drive source of the valve body 56 in the first and second embodiments.

[0130] Note that the above-described embodiment is merely an example embodying the technical idea of the present invention. The present invention is of course not limited to this embodiment, and includes all aspects using the technical idea of the present invention.

Explanation of Reference Numerals

[0131] 10 Semiconductor processing apparatus 11 Carry-out port 12 Space portion 14 Base portion 16 Cover part (support part) 18 Peripheral wall part 20 Cover part body 22 Heat source 22H Quartz heater 23A First heater part 23B Second heater part 24 Gap part 24N Non - light - emitting part 25B Light - emitting part 26 Reflection treatment plate 28 Coolant flow path 30 Mounting flange 32 Recess 34 Through - hole 36 Hermetic member 38 Compression ring 40 Suppressing flange 42 Current introduction part 50 High - temperature - resistant vacuum shut - off valve 52 Passage port 54 Valve box 56 Valve body 58 Outer cylinder 60 Inner wall 62 Sealing material 64 Retreating part 66 Recess 68 Reflector 70 Gap 72 Arm member 74 Flow path 76 Driving source 78 Ball screw 80 Motor 82 Ball screw actuator 84 Coupling 86 Screw shaft 88 Nut (housing) 90 Bearing 92 Guide X1 Metal film X2 Opaque quartz X3 Optical film

Claims

1. A semiconductor processing apparatus having a space for performing heat treatment on a workpiece, An outlet through which the object to be processed can pass is formed in the space, The discharge port is provided with a high-temperature compatible vacuum gate valve, The high-temperature compatible vacuum gate valve includes a valve body having a passage port through which the object to be treated passes, a valve body capable of opening and closing the passage port, a sealant provided on the valve body and pressing against the valve body when the valve body closes the passage port to maintain the space airtight, and a drive source for driving the valve body, The drive source is composed of a ball screw and a motor, The valve body opens and closes the passage port by converting the driving force of the motor into linear motion by the ball screw. A first radiation heat blocking portion that reflects radiant heat from the space portion is provided at a portion of the valve body with which the seal material abuts, the valve body having a surface facing the space, the surface being provided with a second radiant heat blocking portion for reflecting radiant heat from the space.

2. 2. The semiconductor processing apparatus according to claim 1, wherein the first radiant heat blocking portion is any one of a metal film, an optical film, and opaque quartz that reflects the radiant heat.

3. The semiconductor processing apparatus according to claim 1 , wherein the second radiant heat blocking portion is any one of a metal film, an optical film, and opaque quartz that reflects the radiant heat.

4. The semiconductor processing apparatus according to claim 1 , wherein the second radiant heat blocking portion is provided on a reflecting plate that covers at least a portion of the valve body and reflects the radiant heat.

5. The semiconductor processing apparatus of claim 4 , wherein the reflector is made of a ceramic material.

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