Display device

Abstract

To provide a display device which is capable of performing improved touch sensing.SOLUTION: A display device of an example includes a plurality of sub pixels disposed on a substrate, and a plurality of touch units disposed on the substrate. Each sub pixel can include a driving transistor, a light emitting element, and a pixel electrode connecting the driving transistor and the light emitting element. Each touch unit can include a touch sensing transistor and a touch electrode connected to the touch sensing transistor, where the pixel electrode and the touch electrode are disposed on the same layer. Accordingly, the pixel electrode and the touch electrode are disposed on the substrate to sense the touch by a self-capacitance manner.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] [Cross - Reference to Related Applications] This application claims priority to Korean Patent Application No. 10 - 2022 - 0111928, filed with the Korean Intellectual Property Office on September 5, 2022, the disclosure of which is hereby incorporated by reference in its entirety into this application.

[0002] This specification relates to a display device, and more particularly, to a display device capable of touch sensing and using LEDs (Light Emitting Diodes).

Background Art

[0003] Display devices used in computer monitors, TVs, mobile phones, etc. include organic light - emitting display devices (OLEDs) that emit light by themselves and liquid crystal display devices (LCDs) that require a separate light source.

[0004] The application range of display devices can be diversified and expanded not only to computer monitors and TVs but also to personal mobile devices. As a result, research is underway on display devices that have a reduced volume and weight while having a large display area.

[0005] In recent years, display devices including LEDs have attracted attention as next - generation display devices. Since LEDs are made of inorganic materials rather than organic materials, they are excellent in reliability and have a longer lifespan compared to liquid crystal display devices and organic light - emitting display devices.

[0006] In addition, LEDs not only have a fast lighting speed but also are excellent in luminous efficiency, have strong impact resistance and excellent stability, and can display high - brightness images.

Summary of the Invention

Problems to be Solved by the Invention

[0007] The problem to be solved by this specification is to provide a display device capable of improved touch sensing.

[0008] Another problem to be solved by this specification is to provide a display device that simplifies the structure of the touch part by using the assembly wiring as touch sensing wiring.

[0009] Another problem to be solved by this specification is to provide a display device that simplifies the structure of the touch part by using any one of a plurality of wirings for driving sub-pixels as touch sensing wiring.

[0010] Another problem to be solved by this specification is to provide a display device capable of simultaneously driving sub-pixels and a touch part.

[0011] Another problem to be solved by this specification is to provide a display device capable of driving sub-pixels and a touch part in a time-division manner.

[0012] The problems of this specification are not limited to the problems mentioned above, and other problems not mentioned will be clearly understood by those skilled in the art from the following description.

Means for Solving the Problems

[0013] The display device according to an embodiment of this specification includes a plurality of sub-pixels disposed on a substrate, each including a driving transistor, a light-emitting element, and a pixel electrode connecting the driving transistor and the light-emitting element, and a plurality of touch parts disposed on the substrate, each including a touch sensing transistor and a touch electrode connected to the touch sensing transistor. The pixel electrode and the touch electrode are disposed in the same layer. Therefore, the touch electrode can be disposed on the substrate together with the pixel electrode to sense touch in a self-capacitance method.

[0014] The display device according to another embodiment of the present specification includes a display panel in which a plurality of sub-pixels and a plurality of touch portions are arranged, and a touch driving unit that provides a touch driving signal to the plurality of touch portions. The plurality of sub-pixels and the plurality of touch portions are arranged in different rows from each other. Therefore, a plurality of touch portions can be arranged inside the display panel to sense touch in an in-cell method.

[0015] Specific matters of other embodiments are included in the detailed description and the drawings.

[0016] According to an embodiment of the present disclosure, a touch portion can be formed inside the display panel to sense touch input.

[0017] According to an embodiment of the present disclosure, one of the assembly wirings for self-assembling the light-emitting element can be used as a touch sensing wiring to simplify the structure of the touch portion.

[0018] According to an embodiment of the present disclosure, one of the wirings for driving the sub-pixels can be used as a touch sensing wiring to simplify the structure of the touch portion.

[0019] According to an embodiment of the present disclosure, the sub-pixels and the touch portion can be driven simultaneously.

[0020] According to an embodiment of the present disclosure, the sub-pixels and the touch portion can be driven in a time-division manner.

[0021] The effects of one or more embodiments of the present disclosure are not limited to the contents exemplified above, and more various effects are included in this specification.

Brief Description of the Drawings

[0022]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

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Figure 10

Figure 11

Figure 12

Mode for Carrying Out the Invention

[0023] The advantages, features, and methods for achieving them of the present specification will become clear by referring to the embodiments described in detail below together with the accompanying drawings. However, the present specification is not limited to the embodiments disclosed below, and is embodied in various different forms. Merely, these embodiments are provided so that the disclosure of the present specification becomes complete and that those having ordinary knowledge in the technical field to which the present specification pertains are fully informed of the scope of the invention. The present specification is only defined by the scope of the claims.

[0024] The shapes, areas, ratios, angles, numbers, etc. disclosed in the drawings for explaining the embodiments of this specification are exemplary, so this specification is not limited to the matters illustrated. Throughout the specification, the same reference numerals refer to the same components. Also, in explaining this specification, if it is determined that a detailed description of related known technologies may obscure the gist of this specification, the detailed description may be omitted. When terms such as "including", "having", "containing", etc. are used in this specification, unless "only" is used, other parts may be added. When a component is expressed in the singular, it may include the case of including a plurality, unless otherwise explicitly stated.

[0025] In interpreting a component, it is interpreted as including an error range even without a separate explicit description.

[0026] When it is an explanation of a positional relationship, for example, when the positional relationship between two parts is described such as "on ~", "above ~", "below ~", "next to ~", etc., unless "immediately" or "directly" is used, one or more other parts may be located between the two parts.

[0027] An element or layer referred to as "on" another element or layer may include either the case where there is another layer or another element immediately above the other element or where there is an intervening layer or element in the middle.

[0028] Also, first, second, etc. are used to describe various components, but these components are not limited by these terms. These terms are merely used to distinguish one component from another component and do not define an order or sequence. Therefore, the first component referred to below may be the second component within the technical idea of this specification.

[0029] Throughout the specification, the same reference numerals refer to the same components.

[0030] The areas and thicknesses of the respective components shown in the drawings are shown for the convenience of explanation, and this specification is not necessarily limited to the areas and thicknesses of the shown components.

[0031] The respective features of the various embodiments of this specification can be partially or wholly combined or combined with each other, enabling various linkages and drives technically, and each embodiment may be implemented independently of each other or may be implemented together in a related relationship. Also, the term "exemplary" may be used interchangeably with the term "example" and may have the same or similar meaning as "example".

[0032] In the following, this specification will be described with reference to the drawings. All the components of each display device according to all the embodiments of the present disclosure are operably coupled and configured.

[0033] FIG. 1 is a schematic configuration diagram of a display device according to an embodiment of this specification. In FIG. 1, for the convenience of explanation, among the various components of the display device 100, the display panel PN, the gate driving unit GD, the data driving unit DD, the touch driving unit TD, and the timing controller TC are shown.

[0034] Referring to FIG. 1, the display device 100 includes a display panel PN including a plurality of sub-pixels SP, a gate driving unit GD and a data driving unit DD that supply various signals to the display panel PN, a timing controller TC that controls the gate driving unit GD and the data driving unit DD, and a touch driving unit TD for sensing touch input.

[0035] The display panel PN is a configuration for displaying an image to the user and includes a plurality of sub-pixels SP. In the display panel PN, a plurality of scan lines SL and a plurality of data lines DL intersect with each other, and each of the plurality of sub-pixels SP is connected to the scan line SL and the data line DL. In addition, each of the plurality of sub-pixels SP may be connected to a high-potential power supply line, a low-potential power supply line, a reference line, etc.

[0036] The plurality of sub-pixels SP are the minimum units that make up the screen, and each of the plurality of sub-pixels SP may include a light-emitting element and a pixel circuit for driving it. The plurality of light-emitting elements may be differently defined depending on the type of the display panel PN. For example, when the display panel PN is an inorganic light-emitting display panel, the light-emitting element may be an LED (Light-emitting Diode) or a micro LED (Micro Light-emitting Diode).

[0037] The gate driver GD supplies a plurality of scan signals SCAN to a plurality of scan lines SL according to a plurality of gate control signals GCS provided from the timing controller TC. In FIG. 1, one gate driver GD is shown as being disposed at a distance on one side of the display panel PN, but the number and arrangement of the gate drivers GD are not limited thereto.

[0038] The data driver DD converts the video data RGB input from the timing controller TC into a data voltage Vdata using a reference gamma voltage according to a plurality of data control signals DCS provided from the timing controller TC. The data driver DD can supply the converted data voltage Vdata to a plurality of data lines DL.

[0039] The timing controller TC aligns the video data RGB input from the outside and supplies it to the data driver DD. The timing controller TC may generate a gate control signal GCS and a data control signal DCS using a synchronization signal input from the outside, for example, a dot clock signal, a data enable signal, a horizontal / vertical synchronization signal. Then, the timing controller TC can supply the generated gate control signal GCS and data control signal DCS to the gate driver GD and the data driver DD respectively to control the gate driver GD and the data driver DD.

[0040] The touch driving unit TD drives the touch unit during the touch sensing period based on a touch enable signal input from the timing controller TC or an external configuration. The touch driving unit TD can supply a touch driving signal to a plurality of touch electrodes of the touch unit through the touch sensing wiring Sen during the touch sensing period to sense a touch input.

[0041] The touch unit is configured to include a plurality of touch electrodes for detecting a touch input. The touch unit is disposed on the display panel PN and can detect a touch input on the display panel PN. The plurality of touch electrodes can be connected to the touch sensing wiring Sen and the touch driving unit TD to sense a touch input. At this time, depending on the arrangement method of the touch electrodes, an add-on type in which a separate touch unit is manufactured and attached to the display panel PN, an on-cell type in which the touch unit is directly formed on the display panel PN, an in-cell type in which the touch unit is built into the display panel PN, etc. can be adopted.

[0042] Also, the touch unit can sense a touch in a mutual-capacitance method or a self-capacitance method. For example, in the case of the mutual-capacitance method, the touch unit can include a driving touch electrode to which a touch driving signal is applied and a sensing touch electrode from which a touch sensing signal is detected and which forms a capacitance with the driving touch electrode. Then, a touch can be sensed based on a change in capacitance between the driving touch electrode and the sensing touch electrode. In the case of the self-capacitance method, the touch unit can be composed of a plurality of touch electrodes each of which functions as both a driving touch electrode and a sensing touch electrode. Then, a touch driving signal is applied to the touch electrode, and a touch input can be sensed based on a change in capacitance of the touch electrode due to the presence or absence of a touch.

[0043] In the following, the touch part of the display device 100 according to an embodiment of the present specification is of an in-cell type in which touch electrodes are built into the display panel PN, and will be described as a self-capacitance type that measures a change in capacitance with one touch electrode to sense a touch.

[0044] In the following, the plurality of sub-pixels SP and the touch part of the display panel PN of the display device 100 according to an embodiment of the present specification will be described in more detail.

[0045] FIG. 2 is a circuit diagram of the sub-pixel and the touch part of the display device according to an embodiment of the present specification. The sub-pixel and the touch part of FIG. 2 can be used in the display device of FIG. 1 or any other display device of the present disclosure.

[0046] Referring to FIG. 2, each of the plurality of sub-pixels SP includes a first transistor T1, a second transistor T2, a third transistor T3, a storage capacitor Cst, and one or more light-emitting elements LED, and the touch part TU includes a touch sensing transistor ST, a touch electrode TE, and a touch capacitor Cf.

[0047] Referring to FIG. 2, the first transistor T1, the second transistor T2, and the third transistor T3 of each of the plurality of sub-pixels SP include a gate electrode, a source electrode, and a drain electrode. The first transistor T1, the second transistor T2, and the third transistor T3 can be P-type thin-film transistors or N-type thin-film transistors. For example, in a P-type thin-film transistor, holes move from the source electrode to the drain electrode, so current can flow from the source electrode to the drain electrode. In an N-type thin-film transistor, electrons move from the source electrode to the drain electrode, so current can flow from the drain electrode to the source electrode. In the following, it will be described on the assumption that the first transistor T1, the second transistor T2, and the third transistor T3 are N-type thin-film transistors in which current flows from the drain electrode to the source electrode, but it is not limited thereto.

[0048] The first transistor T1 is a transistor that transmits a data voltage Vdata to the gate electrode of the second transistor T2. The first transistor T1 includes a gate electrode connected to the first scan wiring SL1, a drain electrode connected to the data wiring DL, and a source electrode connected to the gate electrode of the second transistor T2. The first transistor T1 can be turned on by a signal from the first scan wiring SL1, and the data voltage Vdata from the data wiring DL can be transmitted to the gate electrode of the second transistor T2 through the turned-on first transistor T1. Therefore, the first transistor T1 can be referred to as a switching transistor.

[0049] The second transistor T2 is a transistor that supplies a drive current to the light-emitting element LED. The second transistor T2 includes a gate electrode connected to the first transistor T1, a drain electrode connected to the high-potential power supply wiring VDD, and a source electrode connected to the light-emitting element LED. The second transistor T2 can be turned on to control the drive current flowing through the light-emitting element LED. Therefore, the second transistor T2 that controls the drive current can be referred to as a drive transistor.

[0050] The third transistor T3 is a transistor for compensating the threshold voltage of the second transistor T2. The third transistor T3 is connected between the source electrode of the second transistor T2 and the reference wiring RL. The third transistor T3 includes a gate electrode connected to the first scan wiring SL1, a source electrode and a drain electrode respectively connected to the source electrode of the second transistor T2 and the reference wiring RL. One of the source electrode and the drain electrode of the third transistor T3 is connected to a node between the second drive transistor T2 and the light-emitting element LED, and the other one of the source electrode and the drain electrode of the third transistor T3 is connected to the reference wiring RL. The third transistor T3 can be turned on to transmit a reference voltage to the source electrode of the second transistor T2 to sense the threshold voltage of the second transistor T2. Therefore, the third transistor T3 that senses the characteristics of the second transistor T2 can be referred to as a sensing transistor.

[0051] The storage capacitor Cst can store the potential difference between the gate electrode and the source electrode of the second transistor T2 while the light-emitting element LED emits light, so that a constant current can be supplied to the light-emitting element LED. The storage capacitor Cst includes a plurality of capacitor electrodes. Some electrodes of the storage capacitor Cst can be connected to the gate electrode of the second transistor T2, and the remaining electrodes can be connected to the source electrode of the second transistor T2.

[0052] One or more light-emitting elements LED are arranged in each sub-pixel SP. The plurality of light-emitting elements LED are elements that emit light by current. The light-emitting element LED can include a light-emitting element LED that emits red light, green light, blue light, etc., and various hues of light including white can be realized by combinations thereof. Also, various hues of light can be realized by using a light-emitting element LED that emits light of a specific hue and a light conversion member that converts light from the light-emitting element LED into light of another hue. The light-emitting element LED is connected between the second transistor T2 and the low-potential power supply wiring VSS, and can emit light by receiving a driving current from the second transistor T2.

[0053] On the other hand, the plurality of light-emitting elements LED arranged in one sub-pixel SP can be connected in parallel. For example, one electrode of each of the plurality of light-emitting elements LED can be connected to the source electrode of the same second transistor T2, and the other electrodes can be connected to the same low-potential power supply wiring VSS.

[0054] A touch unit TU can be arranged on the display panel PN together with a plurality of sub-pixels SP. The touch unit TU can be arranged adjacent to the plurality of sub-pixels SP. As described above, the touch unit TU is configured in an in-cell method built inside the display panel PN, whereby the plurality of sub-pixels SP and the touch unit TU inside the display panel PN can be arranged adjacent to each other. The touch unit TU includes a touch sensing transistor ST and a touch capacitor Cf.

[0055] The touch sensing transistor ST can be turned on to transmit the voltage of the touch electrode TE to the touch sensing wiring Sen. The touch sensing transistor ST can be connected between the touch sensing wiring Sen and the touch electrode TE. And the touch sensing transistor ST can be connected to a scan wiring SL different from the transistors T1 and T3 of the sub-pixel SP and can be independently turned on. The touch sensing transistor ST includes a gate electrode connected to the second scan wiring SL2, a source electrode connected to the touch sensing wiring Sen, and a drain electrode connected between the touch electrode TE. The touch sensing transistor ST is turned on by the scan signal SCAN of the second scan wiring SL2 and can transmit a touch drive signal to the touch electrode TE. And the touch drive unit TD can sense the voltage varied by the touch capacitor Cf formed between the touch electrode TE and the external input FNG through the touch sensing transistor ST and the touch sensing wiring Sen. Therefore, the touch drive unit TD can sense the touch input by detecting the capacitance change of the touch electrode TE, for example, the voltage change amount, through the touch sensing wiring Sen, and can sense the touch coordinates based on the touch sensing wiring Sen and the second scan wiring SL2.

[0056] The touch capacitor Cf is a capacitor formed between the touch electrode TE and the external input FNG. The voltage between the touch electrode TE and the external input FNG changes according to the external input FNG and can be stored in the touch capacitor Cf. The charge stored in the touch capacitor Cf can vary depending on the presence or absence of the external input FNG and the distance between the external input FNG and the touch electrode TE, and the touch drive unit TD can detect the charge change to sense the touch input and the touch coordinates.

[0057] On the other hand, in FIG. 2, it is shown that one touch portion TU is arranged adjacent to one sub-pixel SP, but it may be arranged such that one touch portion TU is adjacent to a plurality of sub-pixels SP, and is not limited thereto.

[0058] Hereinafter, with reference to FIGS. 3 to 6, an example of the structure of the display panel PN of the display device 100 according to an embodiment of the present specification will be described in detail.

[0059] FIG. 3 is an enlarged plan view of the display panel of the display device according to an embodiment of the present specification. FIG. 4 is a cross-sectional view taken along A-A' and B-B' of FIG. 3. FIG. 5 is a cross-sectional view taken along A-A' and C-C' of FIG. 3. FIG. 6 is a cross-sectional view taken along D-D' of FIG. 3. Specifically, FIGS. 4 and 5 are cross-sectional views of a plurality of sub-pixels SP. FIG. 6 is a cross-sectional view of the touch portion TU.

[0060] Referring to FIG. 3, a plurality of sub-pixels SP are arranged on the display panel PN, and the touch portion TU is arranged adjacent to the plurality of sub-pixels SP. The plurality of sub-pixels SP can be arranged in a plurality of rows and a plurality of columns, and the touch portion TU can also be arranged in a plurality of rows and a plurality of columns. The row in which the touch portion TU is arranged can be arranged between the rows in which the plurality of sub-pixels SP are arranged. For example, the plurality of sub-pixels SP and the touch portion TU can be arranged alternately in the column direction. And one touch portion TU can have a width corresponding to one or more sub-pixels SP. For example, one touch portion TU can be arranged in a side region of the first sub-pixel SP1, the second sub-pixel SP2, and the third sub-pixel SP3 in the column direction. And one touch portion TU can have a width corresponding to three sub-pixels SP. However, the design of the touch portion TU and the sub-pixels SP shown in FIG. 3 is exemplary, and the arrangement and area of the touch portion TU and the sub-pixels SP can be designed in various ways and are not limited thereto.

[0061] Referring to FIGS. 3 to 5, the plurality of sub-pixels SP include a first sub-pixel SP1, a second sub-pixel SP2, and a third sub-pixel SP3. Each of the first sub-pixel SP1, the second sub-pixel SP2, and the third sub-pixel SP3 includes a light-emitting element LED and a circuit and can emit light independently. For example, the first sub-pixel SP1 may be a red sub-pixel SP, the second sub-pixel SP2 may be a green sub-pixel SP, and the third sub-pixel SP3 may be a blue sub-pixel SP, but it is not limited thereto.

[0062] The display panel PN includes a substrate 110, a buffer layer 111, a gate insulating layer 112, an interlayer insulating layer 113, a first passivation layer 114, a first planarization layer 115, a second passivation layer 116, a third passivation layer 117, an adhesive layer 119, and a second planarization layer 118.

[0063] First, the substrate 110 is configured to support various components included in the display device 100 and may be made of an insulating material. For example, the substrate 110 may be made of glass, resin, or the like. Also, the substrate 110 may include a polymer or plastic and may be made of a flexible material.

[0064] A high potential power supply line VDD, a plurality of data lines DL, a reference line RL, a light shielding layer LS, and a first capacitor electrode SC1 are disposed on the substrate 110.

[0065] The high potential power supply line VDD is a line that transmits a high potential power supply voltage to each of the plurality of sub-pixels SP. The plurality of high potential power supply lines VDD can transmit the high potential power supply voltage to the drain electrodes of the second transistors T2 of each of the plurality of sub-pixels SP. The high potential power supply line VDD may extend along the column direction among the plurality of sub-pixels SP. For example, the high potential power supply line VDD may be disposed along the column direction between the first sub-pixel SP1 and the third sub-pixel SP3. And the high potential power supply line VDD may be electrically connected to the drain electrodes of the second transistors T2 of each of the plurality of sub-pixels SP disposed in the row direction through an auxiliary high potential power supply line VDDA described later.

[0066] The plurality of data wirings DL are wirings that transmit a data voltage Vdata to each of the plurality of sub-pixels SP. The plurality of data wirings DL can be connected to the first transistors T1 of each of the plurality of sub-pixels SP. The plurality of data wirings DL can extend along the column direction among the plurality of sub-pixels SP. For example, the data wiring DL extending in the column direction between the first sub-pixel SP1 and the high-potential power supply wiring VDD can transmit the data voltage Vdata to the first sub-pixel SP1, and the data wiring DL disposed between the first sub-pixel SP1 and the second sub-pixel SP2 can transmit the data voltage Vdata to the second sub-pixel SP2, and the data wiring DL disposed between the third sub-pixel SP3 and the high-potential power supply wiring VDD can transmit the data voltage Vdata to the third sub-pixel SP3.

[0067] The reference wiring RL is a wiring that transmits a reference voltage to each of the plurality of sub-pixels SP. The reference wiring RL can be connected to the third transistors T3 of each of the plurality of sub-pixels SP. The reference wiring RL can extend along the column direction among the plurality of sub-pixels SP. For example, the reference wiring RL can extend along the column direction between the second sub-pixel SP2 and the third sub-pixel SP3. And the third drain electrodes DE3 of the third transistors T3 of the first sub-pixel SP1, the second sub-pixel SP2, and the third sub-pixel SP3 adjacent to the reference wiring RL can extend in the row direction and be electrically connected to the reference wiring RL.

[0068] A light-shielding layer LS is disposed on the substrate 110 in each of the plurality of sub-pixels SP. The light-shielding layer LS can block light incident on the transistors below the substrate 110 to minimize leakage current. For example, the light-shielding layer LS can block light incident on the second active layer ACT2 of the second transistor T2 which is a driving transistor.

[0069] A first capacitor electrode SC1 is disposed on the substrate 110 in each of the plurality of sub-pixels SP. The first capacitor electrode SC1 can form a storage capacitor Cst together with other capacitor electrodes. The first capacitor electrode SC1 can be formed integrally with the light-shielding layer LS.

[0070] A buffer layer 111 is disposed on a high-potential power supply wiring VDD, a plurality of data wirings DL, a reference wiring RL, a light-shielding layer LS, and a first capacitor electrode SC1. The buffer layer 111 can reduce the penetration of moisture or impurities through the substrate 110. The buffer layer 111 can be composed of, for example, a single layer or a multilayer of silicon oxide (SiOx) or silicon nitride (SiNx), but is not limited thereto. However, the buffer layer 111 may be omitted depending on the type of the substrate 110 or the type of the transistor, and is not limited thereto.

[0071] A first transistor T1, a second transistor T2, and a third transistor T3 are disposed on the buffer layer 111 in each of the plurality of sub-pixels SP.

[0072] First, a first transistor T1 is disposed in each of the plurality of sub-pixels SP. The first transistor T1 includes a first active layer ACT1, a first gate electrode GE1, a first source electrode SE1, and a first drain electrode DE1.

[0073] The first active layer ACT1 is disposed on the buffer layer 111. The first active layer ACT1 can be made of a semiconductor material such as an oxide semiconductor, amorphous silicon, or polysilicon, but is not limited thereto.

[0074] A gate insulating layer 112 is disposed on the first active layer ACT1. The gate insulating layer 112 is an insulating layer for insulating the first active layer ACT1 and the first gate electrode GE1, and can be composed of a single layer or a multilayer of silicon oxide (SiOx) or silicon nitride (SiNx), but is not limited thereto.

[0075] The first gate electrode GE1 is disposed on the gate insulating layer 112. The first gate electrode GE1 can be electrically connected to the first scan wiring SL1. The first gate electrode GE1 can be composed of a conductive material, for example, copper (Cu), aluminum (Al), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or an alloy thereof, but is not limited thereto.

[0076] An interlayer insulating layer 113 is disposed on the first gate electrode GE1. Contact holes for connecting the first source electrode SE1 and the first drain electrode DE1 to the first active layer ACT1 are formed in the interlayer insulating layer 113, respectively. The interlayer insulating layer 113 is an insulating layer for protecting the structure below the interlayer insulating layer 113, and may be composed of a single layer or a multilayer of silicon oxide (SiOx) or silicon nitride (SiNx), but is not limited thereto.

[0077] A first source electrode SE1 and a first drain electrode DE1 electrically connected to the first active layer ACT1 are disposed on the interlayer insulating layer 113. The first drain electrode DE1 may be connected to the data wiring DL and the first active layer ACT1, and the first source electrode SE1 may be connected to the first active layer ACT1 and the second gate electrode GE2 of the second transistor T2. The first source electrode SE1 and the first drain electrode DE1 may be composed of a conductive material, for example, copper (Cu), aluminum (Al), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or an alloy thereof, but is not limited thereto.

[0078] A second transistor T2 is disposed in each of the plurality of sub-pixels SP. The second transistor T2 includes a second active layer ACT2, a second gate electrode GE2, a second source electrode SE2, and a second drain electrode DE2.

[0079] The second active layer ACT2 is disposed on the buffer layer 111. The second active layer ACT2 may be made of a semiconductor material such as an oxide semiconductor, amorphous silicon, or polysilicon, but is not limited thereto.

[0080] A gate insulating layer 112 is disposed on the second active layer ACT2, and a second gate electrode GE2 is disposed on the gate insulating layer 112. The second gate electrode GE2 can be electrically connected to the first source electrode SE1 of the first transistor T1. The second gate electrode GE2 can be composed of, but is not limited to, a conductive material such as copper (Cu), aluminum (Al), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or an alloy thereof.

[0081] An interlayer insulating layer 113 is disposed on the second gate electrode GE2, and a second source electrode SE2 and a second drain electrode DE2 that are electrically connected to the second active layer ACT2 are disposed on the interlayer insulating layer 113. The second drain electrode DE2 can be electrically connected to the second active layer ACT2 and a high-potential power supply wiring VDD, and the second source electrode SE2 can be electrically connected to the second active layer ACT2 and a light-emitting element LED. The second source electrode SE2 and the second drain electrode DE2 can be composed of, but are not limited to, a conductive material such as copper (Cu), aluminum (Al), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or an alloy thereof.

[0082] A third transistor T3 is disposed in each of the plurality of sub-pixels SP. The third transistor T3 includes a third active layer ACT3, a third gate electrode GE3, a third source electrode SE3, and a third drain electrode DE3.

[0083] A third active layer ACT3 is disposed on the buffer layer 111. The third active layer ACT3 can be made of, but is not limited to, a semiconductor material such as an oxide semiconductor, amorphous silicon, or polysilicon.

[0084] A gate insulating layer 112 is disposed on the third active layer ACT3, and a third gate electrode GE3 is disposed on the gate insulating layer 112. The third gate electrode GE3 can be electrically connected to the first scan wiring SL1. The third gate electrode GE3 can be composed of a conductive material, for example, copper (Cu), aluminum (Al), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or an alloy thereof, but is not limited thereto.

[0085] An interlayer insulating layer 113 is disposed on the third gate electrode GE3, and a third source electrode SE3 and a third drain electrode DE3 that are electrically connected to the third active layer ACT3 are disposed on the interlayer insulating layer 113. The third drain electrode DE3 can be electrically connected to the third active layer ACT3 and the reference wiring RL, and the third source electrode SE3 can be electrically connected to the third active layer ACT3 and the second source electrode SE2 of the second transistor T2. The third source electrode SE3 and the third drain electrode DE3 can be composed of a conductive material, for example, copper (Cu), aluminum (Al), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or an alloy thereof, but is not limited thereto.

[0086] A second capacitor electrode SC2 is disposed on the gate insulating layer 112. The second capacitor electrode SC2 is one of the electrodes forming the storage capacitor Cst and can be disposed so as to overlap the first capacitor electrode SC1. The second capacitor electrode SC2 can be integrally formed with the second gate electrode GE2 of the second transistor T2 and can be electrically connected to the second gate electrode GE2. The first capacitor electrode SC1 and the second capacitor electrode SC2 can be disposed apart from each other with the buffer layer 111 and the gate insulating layer 112 interposed therebetween.

[0087] Next, a plurality of scan wirings SL including the first scan wiring SL1 and the second scan wiring SL2, an auxiliary high-potential power supply wiring VDDA, and a third capacitor electrode SC3 are disposed on the interlayer insulating layer 113.

[0088] The first scan wiring SL1 and the second scan wiring SL2 are wirings for transmitting a scan signal SCAN to each of a plurality of sub-pixels SP. The first scan wiring SL1 can extend in a row direction across the plurality of sub-pixels SP. The second scan wiring SL2 can extend in a row direction across the touch portion TU. The first scan wiring SL1 can be electrically connected to a first gate electrode GE1 of a first transistor T1 and a third gate electrode GE3 of a third transistor T3 of each of the plurality of sub-pixels SP. The second scan wiring SL2 can be electrically connected to a sensing gate electrode GES of a touch sensing transistor ST of the touch portion TU.

[0089] An auxiliary high-potential power supply wiring VDDA is disposed on the interlayer insulating layer 113. The auxiliary high-potential power supply wiring VDDA can extend in a row direction and be disposed across the plurality of sub-pixels SP. The auxiliary high-potential power supply wiring VDDA can electrically connect a second drain electrode DE2 of a second transistor T2 of each of the plurality of sub-pixels SP disposed along a row direction and a high-potential power supply wiring VDD extending in a column direction.

[0090] A third capacitor electrode SC3 is disposed on the interlayer insulating layer 113. The third capacitor electrode SC3 is an electrode for forming a storage capacitor Cst and can be disposed so as to overlap the first capacitor electrode SC1 and the second capacitor. The third capacitor electrode SC3 can be formed integrally with a second source electrode SE2 of the second transistor T2 and be electrically connected to the second source electrode SE2. Then, the second source electrode SE2 can also be electrically connected to the first capacitor electrode SC1 through a contact hole formed in the interlayer insulating layer 113 and the buffer layer 111. Therefore, the first capacitor electrode SC1 and the third capacitor electrode SC3 can be electrically connected to the second source electrode SE2 of the second transistor T2.

[0091] Therefore, the storage capacitor Cst is formed on the substrate 110, including a first capacitor electrode SC1 formed and connected to the second source electrode SE2, a second capacitor electrode SC2 formed on the buffer layer 111 and the gate insulating layer 112 and connected to the second gate electrode GE2, and a third capacitor electrode SC3 formed on the interlayer insulating layer 113 and connected to the second source electrode SE2, and can store the voltage between the second gate electrode GE2 and the second source electrode SE2 of the second transistor T2.

[0092] A first passivation layer 114 is disposed on the first transistor T1, the second transistor T2, the third transistor T3, and the storage capacitor Cst. The first passivation layer 114 is an insulating layer for protecting the structure below the first passivation layer 114, and may be composed of a single layer or multiple layers of silicon oxide (SiOx) or silicon nitride (SiNx), but is not limited thereto.

[0093] A first planarization layer 115 is disposed on the first passivation layer 114. The first planarization layer 115 can planarize the upper part of the substrate 110 on which the plurality of transistors T1, T2, T3, ST, and the storage capacitor Cst are disposed. The first planarization layer 115 may be composed of a single layer or multiple layers, and may be made of, for example, photoresist or acrylic-based organic substances, but is not limited thereto.

[0094] A second passivation layer 116 is disposed on the first planarization layer 115. The second passivation layer 116 is an insulating layer for protecting the structure below the second passivation layer 116, and may be composed of a single layer or multiple layers of silicon oxide (SiOx) or silicon nitride (SiNx), but is not limited thereto.

[0095] A connection electrode 120, a plurality of low-potential power supply wirings VSS, and touch sensing wirings Sen are disposed on the second passivation layer 116.

[0096] First, a connection electrode 120 is disposed on each of a plurality of sub-pixels SP. The connection electrode 120 is an electrode that electrically connects the second transistor T2 and the pixel electrode PE. The connection electrode 120 can be electrically connected to the second source electrode SE2 and the third capacitor electrode SC3 through contact holes formed in the second passivation layer 116, the first planarization layer 115, and the first passivation layer 114.

[0097] The connection electrode 120 may have a multilayer structure including a first connection layer 120a and a second connection layer 120b. The first connection layer 120a is disposed on the second passivation layer 116, and the second connection layer 120b covering the first connection layer 120a is disposed. The second connection layer 120b can be disposed so as to surround all of the upper surface and the side surface of the first connection layer 120a. The second connection layer 120b is made of a material more resistant to corrosion than the first connection layer 120a, and can minimize a short circuit defect due to migration between wirings adjacent to the first connection layer 120a during the manufacture of the display device 100. For example, the first connection layer 120a may be made of a conductive material such as copper (Cu) and chromium (Cr), and the second connection layer 120b may be made of molybdenum (Mo), molybdenum titanium (MoTi), etc., but is not limited thereto.

[0098] A plurality of low-potential power supply wirings VSS are disposed on the second passivation layer 116. The plurality of low-potential power supply wirings VSS are wirings that transmit a low-potential power supply voltage to the light-emitting element LED. The plurality of low-potential power supply wirings VSS can extend in the column direction in each of the plurality of sub-pixels SP. For example, one low-potential power supply wiring VSS may be disposed on the first sub-pixel SP1, and a pair of low-potential power supply wirings VSS spaced apart from each other at a certain interval therebetween may be disposed on the second sub-pixel SP2 and the third sub-pixel SP3.

[0099] Each of the plurality of low-potential power supply wirings VSS includes a first conductive layer VSSa and a first clad layer VSSb. The first conductive layer VSSa is disposed on the second passivation layer 116, and the first clad layer VSSb that covers all of the upper surface and side surfaces of the first conductive layer VSSa is disposed on the first conductive layer VSSa. For example, the first conductive layer VSSa can be made of a conductive material such as copper (Cu) and chromium (Cr). And the first clad layer VSSb can be made of a material more resistant to corrosion than the first conductive layer VSSa, for example, molybdenum (Mo), molybdenum titanium (MoTi), etc., but is not limited thereto.

[0100] The touch sensing wiring Sen is disposed on the second passivation layer 116. The touch sensing wiring Sen is connected to the touch sensing transistor ST to transmit a touch drive signal and is a wiring for detecting a change in capacitance of the touch capacitor Cf. The touch sensing wiring Sen can extend in the column direction in any one of the plurality of sub-pixels SP. For example, the touch sensing wiring Sen can extend in the column direction at a certain interval from the low-potential power supply wiring VSS in the first sub-pixel SP1.

[0101] The touch sensing wiring Sen includes a second conductive layer Sena and a second clad layer Senb. The second conductive layer Sena is disposed on the second passivation layer 116, and the second clad layer Senb that covers all of the upper surface and side surfaces of the second conductive layer Sena is disposed on the second conductive layer Sena. For example, the second conductive layer Sena can be made of a conductive material such as copper (Cu) and chromium (Cr). And the second clad layer Senb can be made of a material more resistant to corrosion than the second conductive layer Sena, for example, molybdenum (Mo), molybdenum titanium (MoTi), etc., but is not limited thereto.

[0102] A third passivation layer 117 is disposed on the connection electrode 120, the low potential power supply wiring VSS, and the touch sensing wiring Sen. The third passivation layer 117 is an insulating layer for protecting the structure below the third passivation layer 117, and may be composed of a single layer or a multi-layer of silicon oxide (SiOx) or silicon nitride (SiNx), but is not limited thereto.

[0103] Next, a light emitting element LED is disposed on the third passivation layer 117. The light emitting element LED includes a first light emitting element 130 and a second light emitting element 140. For example, the first light emitting element 130 may be disposed in the first sub-pixel SP1 among the plurality of sub-pixels SP, and the second light emitting element 140 may be disposed in the second sub-pixel SP2 and the third sub-pixel SP3 among the plurality of sub-pixels SP. However, the type of the light emitting element LED is exemplary, and only one of the first light emitting element 130 or the second light emitting element 140 may be used as the light emitting element LED, or other types of light emitting element LEDs may be used, and the present invention is not limited thereto. Also, in FIGS. 4 and 5, for convenience of explanation, it is shown that one light emitting element LED is disposed in each of the plurality of sub-pixels SP, but a plurality of light emitting element LEDs may be disposed in each of the plurality of sub-pixels SP, and the present invention is not limited thereto.

[0104] Referring to FIG. 4, the first light emitting element 130 among the plurality of light emitting element LEDs includes a first semiconductor layer 131, a light emitting layer 132, a second semiconductor layer 133, a first electrode 134, a second electrode 135, and a sealing layer 136.

[0105] A first semiconductor layer 131 is disposed on a third passivation layer 117, and a second semiconductor layer 133 is disposed on the first semiconductor layer 131. The first semiconductor layer 131 and the second semiconductor layer 133 may be layers formed by doping a specific substance with n-type and p-type impurities. For example, the first semiconductor layer 131 and the second semiconductor layer 133 may be layers doped with p-type or n-type impurities in a substance such as gallium nitride (GaN), indium aluminum phosphide (InAlP), gallium arsenide (GaAs), etc. And the p-type impurity substance used here may be any one of magnesium (Mg), zinc (Zn), beryllium (Be), etc., and the n-type impurity substance used here may be any one of silicon (Si), germanium (Ge), tin (Sn), etc., but is not limited thereto.

[0106] A part of the first semiconductor layer 131 may be disposed to protrude outside the second semiconductor layer 133. The upper surface of the first semiconductor layer 131 may consist of a portion that overlaps the lower surface of the second semiconductor layer 133 and a portion disposed outside the lower surface of the second semiconductor layer 133. However, the sizes and shapes of the first semiconductor layer 131 and the second semiconductor layer 133 can be variously deformed and are not limited thereto.

[0107] A light-emitting layer 132 is disposed between the first semiconductor layer 131 and the second semiconductor layer 133. The light-emitting layer 132 can receive supply of holes and electrons from the first semiconductor layer 131 and the second semiconductor layer 133 and emit light. The light-emitting layer 132 may be formed in a single-layer or multi-quantum well (MQW) structure, and may be made of, for example, indium gallium nitride (InGaN) or gallium nitride (GaN), etc., but is not limited thereto.

[0108] A first electrode 134 is disposed to surround the lower surface and side surfaces of the first semiconductor layer 131. The first electrode 134 is an electrode for electrically connecting the first light-emitting element 130 and the low-potential power supply wiring VSS. The first electrode 134 can be formed of a conductive material, such as a transparent conductive material like ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide), or an opaque conductive material like titanium (Ti), gold (Au), silver (Ag), copper (Cu), or an alloy thereof, but is not limited thereto.

[0109] A second electrode 135 is disposed on the upper surface of the second semiconductor layer 133. The second electrode 135 is an electrode for electrically connecting the pixel electrode PE, which will be described later, and the second semiconductor layer 133. The second electrode 135 can be formed of a conductive material, such as a transparent conductive material like ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide), but is not limited thereto.

[0110] A sealing layer 136 is disposed to surround at least a part of the first semiconductor layer 131, the light-emitting layer 132, the second semiconductor layer 133, the first electrode 134, and the second electrode 135. The sealing layer 136 is made of an insulating material and can protect the first semiconductor layer 131, the light-emitting layer 132, and the second semiconductor layer 133. The sealing layer 136 can be disposed to cover the light-emitting layer 132, a part of the side surface of the first semiconductor layer 131 adjacent to the light-emitting layer 132, and a part of the side surface of the second semiconductor layer 133 adjacent to the light-emitting layer 132. The first electrode 134 and the second electrode 135 can be exposed from the sealing layer 136, and the contact electrode CE and the pixel electrode PE, which are formed later, can be electrically connected to the first electrode 134 and the second electrode 135.

[0111] Referring to FIG. 5, the second light-emitting element 140 includes a first semiconductor layer 141, a light-emitting layer 142, a second semiconductor layer 143, a first electrode 144, a second electrode 145, and a sealing layer 146. The first semiconductor layer 141, the light-emitting layer 142, the second semiconductor layer 143, the second electrode 145, and the sealing layer 146 of the second light-emitting element 140 may be substantially the same as the first semiconductor layer 131, the light-emitting layer 132, the second semiconductor layer 133, the second electrode 135, and the sealing layer 136 of the first light-emitting element 130. However, the second light-emitting element 140 is different only in the structure of the first electrode 144 compared with the first light-emitting element 130, and the other configurations are substantially the same.

[0112] The first electrode 144 of the second light-emitting element 140 is disposed so as to be in contact with only the lower surface of the first semiconductor layer 141. Compared with the first light-emitting element 130 in which the first electrode 134 covers both the lower surface and the side surface of the first semiconductor layer 131, in the second light-emitting element 140, since the first electrode 144 is disposed only on the lower surface of the first semiconductor layer 141, the side surface of the first semiconductor layer 141 of the second light-emitting element 140 can be exposed from the first electrode 144. Therefore, the contact electrode CE can be in contact with the side surface of the first semiconductor layer 141 and the side surface of the first electrode 144 and be electrically connected to the second light-emitting element 140.

[0113] On the other hand, the light-emitting element LED can be transferred onto the substrate 110 in various ways. For example, a plurality of assembled wirings that form an electric field on the substrate 110 can be arranged to directly self-assemble the light-emitting element LED onto the substrate 110. In this case, during the manufacture of the display device 100, in the first sub-pixel SP1, the low-potential power supply wiring VSS and the touch-sensing wiring Sen that are spaced apart from each other at a certain interval therebetween can be used as the assembled wirings, and in the second sub-pixel SP2 and the third sub-pixel SP3, a pair of low-potential power supply wirings VSS that are spaced apart from each other at a certain interval therebetween can be used as the assembled wirings.

[0114] Specifically, during the manufacturing of the display device 100, the light-emitting elements LED can be self-assembled in a state where the low-potential power supply wiring VSS and the touch-sensing wiring Sen, which function as a plurality of assembly wirings, and the third passivation layer 117 covering the upper part thereof are formed. The substrate 110 formed up to the third passivation layer 117 and the light-emitting elements LED are placed in a chamber where a fluid is formed, and an alternating voltage can be applied to the assembly wiring to form an electric field. Due to such an electric field, the light-emitting elements LED can be dielectrically polarized and have a polarity. The dielectrically polarized light-emitting elements LED can be moved to a predetermined position (i.e., a predetermined position within each sub-pixel) fixed by dielectrophoresis (DEP), for example, by an electric field formed by an alternating voltage. Therefore, a plurality of light-emitting elements LED can be fixed in the region between a pair of assembly wirings using dielectrophoresis. For example, in the first sub-pixel SP1, the light-emitting elements LED can be self-assembled in the region between the touch-sensing wiring Sen and the low-potential power supply wiring VSS, and in the second sub-pixel SP2 and the third sub-pixel SP3, the light-emitting elements LED can be self-assembled in the region between a pair of low-potential power supply wirings VSS. Therefore, when using the self-assembly method as described above, the process of precisely aligning the light-emitting elements LED can be omitted, and the light-emitting elements LED can be more simply transferred onto the substrate 110.

[0115] On the other hand, during the manufacturing process of the display device 100, the light-emitting elements LED can be self-assembled in a state where an organic layer having an opening is formed on the third passivation layer 117. The opening of the organic layer can correspond to the region where the light-emitting elements LED are to be self-assembled. Therefore, in the region between the plurality of low-potential power supply wirings VSS and the touch-sensing wiring Sen arranged along the column direction, the light-emitting elements LED can be self-assembled only in the opening of the organic layer. And when the self-assembly of the light-emitting elements LED is completed, such an organic layer can be removed, and other components such as the second planarization layer 118 and the pixel electrode PE can be formed.

[0116] On the one hand, in this specification, it has been described that the touch sensing wiring Sen can be used as an assembly wiring together with the low potential power supply wiring VSS. However, a separate assembly wiring may be arranged, and the touch sensing wiring Sen may be arranged in another layer. For example, a separate assembly wiring may be arranged instead of the touch sensing wiring Sen, and the touch sensing wiring Sen may be arranged on any one of the upper parts of the substrate 110, the buffer layer 111, the gate insulating layer 112, the interlayer insulating layer 113, the first passivation layer 114, the first planarization layer 115, and the second passivation layer 116. For example, the touch sensing wiring Sen may extend in the column direction on the gate insulating layer 112 and be electrically connected to the touch sensing transistors ST of the plurality of touch portions TU.

[0117] In addition, the light emitting element LED may be arranged on the substrate 110 by a transfer method using a temporary substrate on which a plurality of assembly wirings are formed in addition to the self-assembly method described above. For example, after self-assembling the light emitting element LED on a temporary substrate 110 on which a plurality of assembly wirings are formed, the temporary substrate can be positioned above the substrate 110 and the light emitting element LED self-assembled on the temporary substrate can be transferred to the substrate 110. A plurality of assembly wirings for forming an electric field may be formed on the temporary substrate, and the light emitting element LED can be self-assembled on the temporary substrate by the electric field of the assembly wiring. Then, with the temporary substrate arranged to face the substrate 110, the temporary substrate can be irradiated with a laser or the like to transfer the light emitting element LED from the temporary substrate to the substrate 110 side.

[0118] Next, referring to FIGS. 4 and 5, an adhesive layer 119 is disposed between the light-emitting element LED and the third passivation layer 117. The adhesive layer 119 can be an organic film that temporarily fixes the light-emitting element LED during the self-assembly process of the light-emitting element LED. During the manufacture of the display device 100, if an organic film covering the light-emitting element LED is formed, a part of the organic film is filled in the space between the light-emitting element LED and the third passivation layer 117, and the light-emitting element LED can be temporarily fixed on the third passivation layer 117. Thereafter, even if the organic film is removed, a part of the organic film that has penetrated below the light-emitting element LED may remain without being removed and become the adhesive layer 119. The adhesive layer 119 can be made of an organic substance, for example, a photoresist or an acrylic-based organic substance, but is not limited thereto.

[0119] A contact electrode CE is disposed on the side surface of the light-emitting element LED. The contact electrode CE is an electrode for electrically connecting the light-emitting element LED and the low-potential power supply wiring VSS. The contact electrode CE can be electrically connected to the low-potential power supply wiring VSS through a contact hole formed in the third passivation layer 117. And the contact electrode CE is disposed so as to surround at least a part of the side surfaces of the first semiconductor layers 131 and 141 and the first electrodes 134 and 144 of the light-emitting element LED, and can electrically connect the first semiconductor layers 131 and 141 and the first electrodes 134 and 144 to the low-potential power supply wiring VSS.

[0120] At this time, referring to FIG. 4, no contact hole is formed in the third passivation layer 117 covering the touch sensing wiring Sen, and it is possible to prevent the light-emitting element LED from being connected to the touch sensing wiring Sen.

[0121] On the other hand, in FIG. 4, it is shown that the contact electrode CE is formed on the contact hole of the third passivation layer 117 where the low-potential power supply wiring VSS is exposed, and is disposed so as to cover only a part of the first light-emitting element 130 adjacent to the contact hole, but the contact electrode CE may be disposed so as to surround the entire lower side surface of the first light-emitting element 130, and is not limited thereto.

[0122] Next, a second planarization layer 118 is disposed on the light-emitting element LED and the contact electrode CE. The second planarization layer 118 can planarize the upper portion of the substrate 110 on which the light-emitting element LED is disposed, and can fix the light-emitting element LED on the substrate 110 together with the adhesive layer 119. The second planarization layer 118 can be configured as a single layer or a multi-layer, and can be made of, for example, a photoresist or an acrylic-based organic substance, but is not limited thereto.

[0123] A pixel electrode PE is disposed on the second planarization layer 118. The pixel electrode PE is an electrode for electrically connecting a plurality of light-emitting elements LED and the connection electrode 120. The pixel electrode PE can be electrically connected to the light-emitting element LED, the connection electrode 120, and the second transistor T2 through a contact hole formed in the second planarization layer 118. Therefore, the second electrodes 135, 145 of the light-emitting element LED, the connection electrode 120, and the second source electrode SE2 of the second transistor T2 can be electrically connected to each other through the pixel electrode PE. The pixel electrode PE can be made of a conductive material, for example, a transparent conductive material such as ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide), but is not limited thereto.

[0124] Referring to both FIGS. 3 and 6, the touch portion TU includes a touch sensing transistor ST, an auxiliary drain electrode DESA, a touch sensing wiring Sen, and a touch electrode TE.

[0125] A touch sensing transistor ST is disposed on the substrate 110 and the buffer layer 111. The touch sensing transistor ST includes a sensing active layer ACTS, a sensing gate electrode GES, a sensing source electrode SES, and a sensing drain electrode DES.

[0126] A sensing active layer ACTS is disposed on the buffer layer 111. The sensing active layer ACTS can be made of a semiconductor material such as an oxide semiconductor, amorphous silicon, or polysilicon, but is not limited thereto.

[0127] A gate insulating layer 112 is disposed on the sensing active layer ACTS, and a sensing gate electrode GES is disposed on the gate insulating layer 112. The sensing gate electrode GES can be electrically connected to the second scan wiring SL2. The sensing gate electrode GES can be composed of a conductive material, for example, copper (Cu), aluminum (Al), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or an alloy thereof, but is not limited thereto.

[0128] An interlayer insulating layer 113 is disposed on the sensing gate electrode GES, and a sensing source electrode SES and a sensing drain electrode DES that are electrically connected to the sensing active layer ACTS are disposed on the interlayer insulating layer 113. The sensing drain electrode DES can be electrically connected to the sensing active layer ACTS and the touch electrode TE, and the sensing source electrode SES can be electrically connected to the sensing active layer ACTS and the touch sensing wiring Sen. The sensing source electrode SES and the sensing drain electrode DES can be composed of a conductive material, for example, copper (Cu), aluminum (Al), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or an alloy thereof, but is not limited thereto.

[0129] On the other hand, an auxiliary drain electrode DESA can be further disposed to electrically connect the sensing drain electrode DES and the touch electrode TE. The auxiliary drain electrode DESA includes a first auxiliary drain electrode DESA1, a second auxiliary drain electrode DESA2, and a third auxiliary drain electrode DESA3.

[0130] The first auxiliary drain electrode DESA1 is disposed on the buffer layer 111 and the gate insulating layer 112. The first auxiliary drain electrode DESA1 can be electrically connected to the sensing drain electrode DES through a contact hole formed in the interlayer insulating layer 113.

[0131] The second auxiliary drain electrode DESA2 is disposed on the interlayer insulating layer 113. The second auxiliary drain electrode DESA2 can be electrically connected to the first auxiliary drain electrode DESA1 through a contact hole formed in the interlayer insulating layer 113.

[0132] The third auxiliary drain electrode DESA3 is disposed on the second passivation layer 116. The third auxiliary drain electrode DESA3 can be electrically connected to the second auxiliary drain electrode DESA2 through contact holes formed in the second passivation layer 116, the first planarization layer 115, and the first passivation layer 114. The third auxiliary drain electrode DESA3 includes a first drain electrode layer DESA3a and a second drain electrode layer DESA3b. The first drain electrode layer DESA3a is disposed on the second passivation layer 116, and the second drain electrode layer DESA3b covering the first drain electrode layer DESA3a is disposed on the first drain electrode layer DESA3a. For example, the first drain electrode layer DESA3a can be made of a conductive material such as copper (Cu) and chromium (Cr). And the second drain electrode layer DESA3b can be made of a material more resistant to corrosion than the first drain electrode layer DESA3a, for example, molybdenum (Mo), molybdenum titanium (MoTi), etc., but is not limited thereto.

[0133] The touch sensing wiring Sen is disposed on the second passivation layer 116. The touch sensing wiring Sen can extend in the column direction in any one of a plurality of sub-pixels SP. For example, the touch sensing wiring Sen can extend in the column direction with a certain interval from the low potential power supply wiring VSS in the first sub-pixel SP1.

[0134] The touch sensing wiring Sen includes a second conductive layer Sena and a second cladding layer Senb. The second conductive layer Sena is disposed on the second passivation layer 116, and the second cladding layer Senb that covers the side and top surfaces of the second conductive layer Sena is disposed on the second conductive layer Sena. The second conductive layer Sena can be electrically connected to the sensing source electrode SES of the touch sensing transistor ST through contact holes formed in the second passivation layer 116, the first planarization layer 115, and the first passivation layer 114. For example, the second conductive layer Sena can be made of a conductive material such as copper (Cu) and chromium (Cr). And the second cladding layer Senb can be made of a material more resistant to corrosion than the second conductive layer Sena, such as molybdenum (Mo), molybdenum titanium (MoTi), etc., but is not limited thereto.

[0135] The touch electrode TE is disposed on the second planarization layer 118. The touch electrode TE can be electrically connected to the auxiliary drain electrode DESA through contact holes formed in the second planarization layer 118 and the third passivation layer 117. Therefore, the touch electrode TE can be electrically connected to the touch sensing transistor ST through the auxiliary drain electrode DESA. The touch electrode TE can be disposed in the same material and the same layer as the pixel electrode PE. The touch electrode TE can be composed of a conductive material, such as a transparent conductive material such as ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide), etc., but is not limited thereto.

[0136] When an external input FNG is sensed at the location where the touch electrode TE is located, the external input FNG and the touch electrode TE can form a touch capacitor Cf, and the capacitance of the touch electrode TE can be determined. Therefore, the touch driving unit TD can detect the presence or absence and coordinates of the external input FNG based on the change amount of the capacitance of the touch electrode TE in the touch unit TU.

[0137] On the other hand, since the touch unit TU and the sub-pixel SP are connected to different wirings and driven, the touch unit TU and the sub-pixel SP can be driven independently. Therefore, during one frame period, the touch unit TU can be freely driven without separating the driving periods of the touch unit TU and the sub-pixel SP.

[0138] Hereinafter, with reference to FIGS. 7 and 8, the display period and the touch sensing period will be described.

[0139] In particular, FIG. 7 is a timing diagram showing an example of signals input to the sub-pixel and the touch unit of the display device according to an embodiment of the present specification. FIG. 8 is a graph showing an example of the amount of voltage change of the touch unit depending on the presence or absence of an external input in the display device according to an embodiment of the present specification.

[0140] Referring to FIG. 7, in the display device 100 according to an embodiment of the present specification, since the plurality of sub-pixels SP and the touch unit TU are driven by different wirings, the sub-pixel SP and the touch unit TU can be driven simultaneously during one frame period. For example, since the sub-pixel SP is connected to the first scan wiring SL1, the data wiring DL, the reference wiring RL, the high potential power supply wiring VDD, and the low potential power supply wiring VSS, and the touch unit TU is connected to the second scan wiring SL2 and the touch sensing wiring Sen, the sub-pixel SP and the touch unit TU can be driven simultaneously. During one frame period, without separately dividing the display period and the touch sensing period, the touch unit TU can be freely driven when the sub-pixel SP is driven.

[0141] During one frame period, at the first time point t1, a scan signal SCAN is output to the first scan wiring SL1, and a data voltage Vdata can be input to the sub-pixel SP. At the first time point t1, the first transistor T1 is turned on by the high-level scan signal SCAN and can transmit the data voltage Vdata to the second gate electrode GE2. Therefore, the second transistor T2 can supply a driving current to the light-emitting element LED based on the data voltage Vdata input to the second gate electrode GE2.

[0142] While driving the sub-pixel SP, a touch driving signal can be continuously output to the touch sensing wiring Sen. During one frame period, the touch driving signal output to the touch sensing wiring Sen is supplied to the touch sensing transistor ST and the touch electrode TE to sense the external input FNG. For example, the touch driving signal of the touch sensing wiring Sen can be transmitted to the touch electrode TE through the touch sensing transistor ST turned on at the second time point t2.

[0143] Specifically, referring to FIG. 8, the external input FNG can be sensed based on the voltage change amount of the touch electrode TE sensed through the touch sensing wiring Sen by the touch driving unit TD. The touch driving signal can be transmitted to the touch electrode TE by the touch sensing transistor ST turned on at the second time point t2, and a touch capacitor Cf can be formed between the external input FNG and the touch electrode TE. Then, the voltage change amount of the touch electrode TE sensed by the touch driving unit TD through the touch sensing wiring Sen can change according to the capacitance of the touch capacitor Cf. For example, the amplitude of the voltage of the touch electrode TE can increase when the external input FNG is present compared to when there is no external input FNG. Therefore, the peak voltage can change depending on the presence or absence of the external input FNG, and the external input FNG can be sensed based on the voltage change amount ΔV of such a peak voltage.

[0144] On the other hand, in the display panel PN, the touch portions TU are arranged in a plurality of rows. Such a plurality of rows can be divided into several groups and sequentially driven for each group to sense touch. For example, during a certain period, the touch portions TU of rows 1 to n can be driven simultaneously to sense touch, and during the next period, the touch portions TU of rows n + 1 to 2n can be driven simultaneously to sense touch. Therefore, the touch sensing sensitivity can be improved by driving the touch portions TU of a plurality of rows simultaneously.

[0145] Therefore, in the display device 100 according to an embodiment of the present specification, when forming the sub-pixel SP, it is possible to provide a display device 100 capable of touch sensing by forming the touch unit TU together. When forming the sub-pixel SP on the display panel PN, the configuration of the touch unit TU can be formed together in the same layer with the same material as the configuration of the sub-pixel SP, thereby realizing the touch unit TU. Specifically, at least a part of the touch sensing transistor ST can be formed together in the same layer with the same material as the first transistor T1, the second transistor T2, and the third transistor T3 of the sub-pixel SP. The touch sensing wiring Sen can be formed together in the same layer with the same material when forming the low potential power supply wiring VSS. And in the case of the touch electrode TE, it can be formed in the same layer and with the same material as the pixel electrode PE. Therefore, in the display device 100 according to an embodiment of the present specification, the touch unit TU can be formed inside the display panel PN without a separate additional process, and the display device 100 capable of touch sensing can be easily realized.

[0146] In the display device 100 according to an embodiment of the present specification, any one of the assembly wirings for self-assembling the light emitting element LED can be used as the touch sensing wiring Sen of the touch unit TU, so that the touch unit TU can be realized without adding a separate wiring. The light emitting element LED can be transferred onto the substrate 110 in various ways, and among them, the light emitting element LED can be easily self-assembled and aligned in a self-assembly method using the assembly wiring. The light emitting element LED can be self-assembled at a specific position by an electric field formed by a pair of assembly wirings. After the manufacture of the display device 100 is completed, the display device 100 can be driven by using the assembly wiring as the low potential power supply wiring VSS. And one of the pair of assembly wirings arranged for each sub-pixel SP is used as the low potential power supply wiring VSS, and the rest is used as the touch sensing wiring Sen, so that both the sub-pixel SP and the touch unit TU can be driven. Therefore, in the display device 100 according to an embodiment of the present specification, both the sub-pixel SP and the touch unit TU can be easily formed by using the assembly wiring.

[0147] In the display device 100 according to an embodiment of the present specification, the touch unit TU and the sub-pixel SP can be driven independently. The touch unit TU is connected to the touch sensing wiring Sen and the second scan wiring SL2 and driven. The sub-pixel SP can be connected to the first scan wiring SL1, the data wiring DL, the reference wiring RL, the low potential power supply wiring VSS, and the high potential power supply wiring VDD and driven. For example, the touch sensing transistor ST and the touch capacitor Cf of the touch unit TU, and the first transistor T1, the second transistor T2, the third transistor T3, the storage capacitor Cst, and the light emitting element LED of the sub-pixel SP can be connected to different wirings and driven. Therefore, the sub-pixel SP and the touch unit TU can be driven independently, and both of them can be driven simultaneously. For example, within one frame period, both the sub-pixel SP and the touch unit TU can be driven to display an image and at the same time touch can be sensed. Therefore, in the display device 100 according to an embodiment of the present specification, the touch unit TU and the sub-pixel SP can be connected to different wirings and the touch unit TU and the sub-pixel SP can be driven simultaneously.

[0148] FIG. 9 is a circuit diagram of a sub-pixel and a touch unit of a display device according to another embodiment of the present specification. FIG. 10 is an enlarged plan view of a display panel of a display device according to another embodiment of the present specification. FIG. 11 is a cross-sectional view taken along D-D' of FIG. 10. FIG. 12 is a timing diagram showing an example of signals input to the sub-pixel and the touch unit of a display device according to another embodiment of the present specification. The display device 900 in FIGS. 9 to 12 is substantially the same in other configurations as the display device 100 in FIGS. 1 to 10 except that the reference wiring RL is used instead of the touch sensing wiring Sen, so duplicate descriptions can be omitted or made concise.

[0149] Referring to FIG. 9, the touch sensing transistor ST of the touch unit TU is connected to the reference wiring RL. The sensing source electrode SES and the sensing drain electrode DES of the touch sensing transistor ST can be connected between the reference wiring RL and the touch electrode TE. Therefore, the reference wiring RL can be used for both driving the sub-pixel SP and the touch unit TU.

[0150] Referring to both FIGS. 10 and 11, a reference wiring RL is disposed on a substrate 110, and a buffer layer 111 is disposed on the reference wiring RL. A sensing active layer ACTS of a touch sensing transistor ST is disposed on the buffer layer 111, and a gate insulating layer 112 and a sensing gate electrode GES are disposed on the sensing active layer ACTS and the buffer layer 111.

[0151] Then, an interlayer insulating layer 113 is disposed on the sensing gate GES electrode, and a sensing source electrode SES, a sensing drain electrode DES, an auxiliary source electrode SESA, and an auxiliary drain electrode DESA of the touch sensing transistor ST are disposed on the interlayer insulating layer 113.

[0152] The sensing source electrode SES can be electrically connected to the reference wiring RL through the auxiliary source electrode SESA. Specifically, the auxiliary source electrode SESA includes a first auxiliary source electrode SESA1 and a second auxiliary source electrode SESA2. The first auxiliary source electrode SESA1 is disposed between the gate insulating layer 112 and the interlayer insulating layer 113 and can be connected to the sensing source electrode SES through a contact hole formed in the interlayer insulating layer 113. And the second auxiliary source electrode SESA2 is disposed on the interlayer insulating layer 113 and can be electrically connected to the first auxiliary source electrode SESA1 under the interlayer insulating layer 113 and the reference wiring RL under the interlayer insulating layer 113 and the buffer layer 111. Therefore, the sensing source electrode SES and the reference wiring RL can be electrically connected through the auxiliary source electrode SESA.

[0153] The sensing drain electrode DES can be electrically connected to the touch electrode TE through the auxiliary drain electrode DESA. The auxiliary drain electrode DESA is disposed on the second passivation layer 116 and includes a first drain electrode layer DESAa and a second drain electrode layer DESAb. The first drain electrode layer DESAa is disposed on the second passivation layer 116 and can be connected to the sensing drain electrode DES through contact holes formed in the second passivation layer 116, the first planarization layer 115, and the first passivation layer 114. And the second drain electrode layer DESAb is disposed to cover all the upper and side surfaces of the first drain electrode layer DESAa and can be connected to the touch electrode TE through contact holes formed in the third passivation layer 117 and the second planarization layer 118. Therefore, the sensing drain electrode DES and the touch electrode TE can be electrically connected through the auxiliary drain electrode DESA.

[0154] On the other hand, since the third transistor T3 of the sub-pixel SP and the touch sensing transistor ST of the touch unit TU share one reference wiring RL, the sub-pixel SP and the touch unit TU can be driven in different periods. For example, the display period when the sub-pixel SP is driven and the touch sensing period when the touch unit TU is driven can be driven in a time-division manner.

[0155] Specifically, referring to FIG. 12, at the first time point t1 during the display period, a turn-on level scan signal SCAN is applied to the first scan wiring SL1. The first transistor T1 is turned on by the scan signal SCAN of the first scan wiring SL1, and a data voltage Vdata is applied to the sub-pixel SP so that the sub-pixel SP can be driven. At this time, during the display period when the sub-pixel SP is driven, a reference voltage is supplied to the reference wiring RL so that the third transistor T3 can be normally driven.

[0156] Then, during the second time point t2 in the touch sensing period, a scan signal SCAN at the turn-on level is applied to the second scan wiring SL2. The touch sensing transistor ST is turned on by the scan signal SCAN of the second scan wiring SL2, and a touch drive signal is applied to the touch electrode TE so that the touch unit TU can be driven. Therefore, during the touch sensing period in which the touch unit TU is driven, a touch drive signal is supplied to the reference wiring RL so that the touch unit TU can be driven normally.

[0157] Therefore, a reference voltage can be applied to the reference wiring RL during the display period in which the third transistor T3 is turned on, and a touch drive signal can be applied to the reference wiring RL during the touch sensing period in which the touch sensing transistor ST is turned on.

[0158] In the display device 900 according to another embodiment of the present specification, the reference wiring RL of the sub-pixel SP can be used as the touch sensing wiring Sen to simplify the structure of the touch unit TU. In order to drive the touch unit TU, a touch drive signal is applied to the touch sensing transistor ST and the touch electrode TE, and a touch sensing wiring Sen for detecting a change in the capacitance of the touch electrode TE is required. However, in order to separately arrange the touch sensing wiring Sen, more design area is required, which may reduce the aperture ratio or make the structure of the display device more complicated. However, in the display device 900 according to another embodiment of the present specification, since the sub-pixel SP and the touch unit TU are driven sharing one reference wiring RL, the touch sensing wiring Sen can be removed and the structure of the display device can be simplified.

[0159] In addition, in the display device 900 according to another embodiment of the present specification, the display period and the touch sensing period are driven in a time-division manner, so that the sub-pixel SP and the touch unit TU can share one reference wiring RL. During the display period, the third transistor T3 can be turned on, and a reference voltage can be applied to the reference wiring RL to drive the sub-pixel SP. Then, during the touch sensing period, the touch sensing transistor ST can be turned on, and a touch driving signal can be applied to the reference wiring RL to drive the touch unit TU. Therefore, in the display device 900 according to another embodiment of the present specification, even if the sub-pixel SP and the touch unit TU share one reference wiring RL, since the display period and the touch sensing period are driven in different periods from each other, touch can be sensed while displaying an image.

[0160] The display devices according to various embodiments of the present specification can be described as follows.

[0161] A display device according to an embodiment of the present specification includes a plurality of sub-pixels disposed on a substrate, each including a driving transistor, a light-emitting element, and a pixel electrode connecting the driving transistor and the light-emitting element, and a plurality of touch units disposed on the substrate, each including a touch sensing transistor and a touch electrode connected to the touch sensing transistor, and the pixel electrode and the touch electrode are disposed in the same layer.

[0162] According to another feature of the present specification, it may further include a low-potential power supply wiring disposed in each of the plurality of sub-pixels, and a touch sensing wiring disposed in any one of the plurality of sub-pixels and connected to the touch sensing transistor. In the first sub-pixel among the plurality of sub-pixels, the touch sensing wiring and the low-potential power supply wiring may be spaced apart from each other with a certain interval therebetween. In the second sub-pixel among the plurality of sub-pixels, a pair of low-potential power supply wirings may be spaced apart from each other with a certain interval therebetween.

[0163] According to another feature of the present specification, in a first sub-pixel among a plurality of sub-pixels, the light-emitting element can be disposed between a touch-sensing wiring and a low-potential power supply wiring, and in a second sub-pixel among the plurality of sub-pixels, the light-emitting element can be disposed between a pair of low-potential power supply wirings.

[0164] According to another feature of the present specification, the touch-sensing wiring and the low-potential power supply wiring can extend in one direction, and the plurality of sub-pixels and the plurality of touch portions can be alternately arranged in one direction.

[0165] According to another feature of the present specification, each of the plurality of sub-pixels can further include a pair of low-potential power supply wirings that are spaced apart from each other at a certain interval therebetween, and a reference wiring disposed between the plurality of sub-pixels, and the touch-sensing transistor can be connected between the reference wiring and the touch electrode.

[0166] According to another feature of the present specification, each of the plurality of sub-pixels can further include a sensing transistor in which one of a source electrode and a drain electrode is connected to a node between a driving transistor and a light-emitting element, and the other one of the source electrode and the drain electrode of the sensing transistor can be connected to the reference wiring.

[0167] According to another feature of the present specification, a touch driving signal can be applied to the reference wiring while the touch-sensing transistor is turned on, and a reference voltage can be applied to the reference wiring while the sensing transistor is turned on.

[0168] According to another feature of the present specification, at least a part of the touch-sensing transistor can be disposed in the same layer as the driving transistor.

[0169] A display device according to another embodiment of the present specification includes a display panel in which a plurality of sub-pixels and a plurality of touch portions are arranged, and a touch driving unit that provides a touch driving signal to the plurality of touch portions, and the plurality of sub-pixels and the plurality of touch portions are arranged in different rows from each other.

[0170] According to another feature of this specification, each of the plurality of sub-pixels may include a first transistor connected to a data wiring, a second transistor having a gate electrode connected to a source electrode of the first transistor, a third transistor connected between a source electrode of the second transistor and a reference wiring, and a light-emitting element connected to the source electrode of the second transistor.

[0171] According to still another feature of this specification, each of the plurality of touch portions may include a touch electrode forming an external input and a touch capacitor, and a touch sensing transistor connected to the touch electrode, and the touch sensing transistor may be connected to a scan wiring different from the first transistor and the third transistor.

[0172] According to still another feature of this specification, it may further include a touch sensing wiring connected between the touch sensing transistor and the touch driving unit, and during one frame period, at least a part of the display period for driving the sub-pixels and the touch sensing period for driving the touch portion may overlap with each other.

[0173] According to still another feature of this specification, the touch sensing transistor may be connected between the reference wiring and the touch electrode, and during one frame period, the display period for driving the sub-pixels and the touch sensing period for driving the touch portion may be different periods from each other.

[0174] The embodiments of this specification have been described in more detail with reference to the accompanying drawings above. However, this specification is not necessarily limited to such embodiments and can be variously modified and implemented within the scope that does not deviate from the technical idea of this specification. Therefore, the embodiments disclosed in this specification are not for limiting the technical idea of this specification but for explanation, and the scope of the technical idea of this specification is not limited by such embodiments. Therefore, it should be understood that the embodiments described above are exemplary in all aspects and not restrictive. The protection scope of this specification should be interpreted by the following claims, and all technical ideas within the equivalent scope should be interpreted as being included in the scope of rights of this specification.

Claims

1. A display device, the display device comprising: a plurality of sub-pixels arranged on a substrate, each of the plurality of sub-pixels including a driving transistor, a light-emitting element, and a pixel electrode coupling the driving transistor and the light-emitting element; and a plurality of touch units disposed on the substrate, each of the plurality of touch units including a touch sensing transistor and a touch electrode coupled to the touch sensing transistor; Including, The display device, wherein the pixel electrode and the touch electrode are disposed in the same layer.

2. A low potential power supply wiring arranged in each of the plurality of sub-pixels; and a touch sensing line disposed in any one of the plurality of sub-pixels and connected to the touch sensing transistor; In a first sub-pixel among the plurality of sub-pixels, the touch sensing line and the low potential power line are spaced apart from each other with a certain interval therebetween; The display device according to claim 1 , wherein in a second sub-pixel among the plurality of sub-pixels, a pair of low potential power supply wirings are arranged spaced apart from each other with a fixed interval therebetween.

3. In the first sub-pixel among the plurality of sub-pixels, the light-emitting element is disposed between the touch sensing wiring and the low potential power supply wiring; The display device according to claim 2 , wherein in the second sub-pixel among the plurality of sub-pixels, the light-emitting element is disposed between the pair of low potential power supply wirings.

4. The touch sensing wiring and the low potential power supply wiring extend in one direction, The display device according to claim 2 , wherein the sub-pixels and the touch portions are alternately arranged in the one direction.

5. A pair of low potential power supply wirings arranged at a certain interval between each of the sub-pixels; and Further comprising a reference line disposed between the plurality of sub-pixels; The display device of claim 1 , wherein the touch sensing transistor is coupled between the reference line and the touch electrode.

6. Each of the plurality of sub-pixels further includes a sensing transistor having a source electrode and a drain electrode, one of the source electrode and the drain electrode of the sensing transistor is connected to a node between the driving transistor and the light emitting device; The display device of claim 5 , wherein the other of the source electrode and the drain electrode of the sensing transistor is connected to the reference line.

7. While the touch sensing transistor is turned on, a touch driving signal is applied to the reference line; 7. The display device of claim 6, wherein a reference voltage is applied to the reference line while the sensing transistor is turned on.

8. The display device of claim 1 , wherein at least a portion of the touch sensing transistor is disposed in the same layer as the drive transistor.

9. A display device, the display device comprising: A display panel including a plurality of sub-pixels and a plurality of touch units; and a touch driver configured to provide touch drive signals to the plurality of touch units; Including, The plurality of sub-pixels and the plurality of touch portions are arranged in different rows.

10. Each of the plurality of sub-pixels is a first transistor coupled to the data line; a second transistor having a gate electrode connected to a source electrode of the first transistor; a third transistor coupled between the source electrode of the second transistor and a reference line; and The display device of claim 9 , comprising a light emitting element coupled to a source electrode of the second transistor.

11. Each of the plurality of touch units is A touch electrode that forms a touch capacitor with an external input; and a touch sensing transistor connected to the touch electrode; The display device of claim 10 , wherein the touch sensing transistor is connected to a different scan line from the first transistor and the third transistor.

12. a touch sensing wiring connected between the touch sensing transistor and the touch driver, The display device of claim 11 , wherein a display period for driving any of the plurality of sub-pixels and a touch sensing period for driving any of the plurality of touch units at least partially overlap each other during one frame period.

13. the touch sensing transistor is connected between the reference line and the touch electrode; The display device of claim 11 , wherein a display period for driving any of the plurality of sub-pixels and a touch sensing period for driving any of the plurality of touch units are different periods during one frame period.

14. A display device, the display device comprising: a plurality of sub-pixels arranged on a substrate, each of the plurality of sub-pixels including a driving transistor, a light-emitting element, and a pixel electrode coupling the driving transistor and the light-emitting element; and a plurality of touch units disposed on the substrate, each of the plurality of touch units including a touch sensing transistor and a touch sensing wiring coupled to the touch sensing transistor; Including, When the light-emitting elements are transferred to the sub-pixels, the touch sensing wiring is used as an assembly wiring.

15. The touch sensing line and the low potential power supply line are disposed in each of the plurality of sub-pixels, and the touch sensing line and the low potential power supply line are disposed at a predetermined interval therebetween and spaced apart from each other, When the light-emitting element is transferred to the plurality of sub-pixels, the touch sensing wiring and the low potential power supply wiring are used as assembly wiring. The display device according to claim 14.

16. a touch capacitor having a first touch electrode and a second touch electrode; The display device of claim 14 , wherein the first touch electrode is coupled to the touch sensing transistor and the second touch electrode is coupled to an external input.

17. Each of the plurality of sub-pixels further includes a sensing transistor having a source electrode and a drain electrode, one of the source electrode and the drain electrode of the sensing transistor is connected to a node between the driving transistor and the light emitting device; The display device of claim 14, wherein the other of the source electrode and the drain electrode of the sensing transistor is connected to a reference line.

18. While the touch sensing transistor is turned on, a touch driving signal is applied to the reference line; 18. The display device of claim 17, wherein a reference voltage is applied to the reference line while the sensing transistor is turned on.

19. A display device, the display device comprising: A plurality of sub-pixels arranged on a substrate, each of the plurality of sub-pixels including a driving transistor, a pair of low potential power supply wirings, a light emitting element, and a pixel electrode connecting the driving transistor and the light emitting element. Including, the pair of low potential power supply wirings are arranged at a constant interval therebetween and spaced apart from each other; When the light-emitting element is transferred onto a substrate, the pair of low potential power supply wirings are used as assembly wiring.

20. 20. The display device of claim 19, wherein the light emitting elements are dielectrically polarized, and an AC voltage is applied to the assembly wiring to form an electric field to align the light emitting elements with the plurality of sub-pixels, respectively.

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