Large-area and high-density plasma processing chamber for flat panel display
The lid assembly for a process chamber, with its advanced gas distribution and plasma generation systems, addresses the challenge of film thickness uniformity across large substrates by enabling independent control of plasma density and gas distribution.
Patent Information
- Application Number
- JP2025018163
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- Filing Date
- 2025-02-06
- Publication Date
- 2025-06-03
AI Technical Summary
Existing process chambers face challenges in achieving film thickness uniformity across large substrates, particularly due to the structural limitations of dielectric materials in inductively coupled plasma systems.
A lid assembly for a process chamber is designed to independently control plasma density and gas distribution, featuring a gas distribution assembly with diffuser plates and dielectric plates, and a plasma generation system with coils and dielectric plates to manage pressure and plasma energy distribution.
This solution enhances film thickness uniformity across large substrates by allowing independent control of plasma density and gas distribution, effectively addressing the structural limitations of traditional systems.
Smart Images

Figure 2025084773000001_ABST
Abstract
Description
Technical Field
[0001]
[0001] Embodiments of the present disclosure generally relate to process chambers such as plasma enhanced chemical vapor deposition (PECVD) chambers. In particular, embodiments of the present disclosure relate to a lid assembly for a process chamber.
Background Art
[0002]
[0002] In the manufacture of solar panels and flat panel displays, numerous processes are employed to deposit thin films on substrates such as semiconductor substrates, solar panel substrates, and liquid crystal display (LCD) and / or organic light emitting diode (OLED) substrates to form electronic devices on the substrates. Deposition is generally achieved by introducing a precursor gas into a chamber having a substrate disposed on a temperature-controlled substrate support. The precursor gas is typically introduced through a gas distribution plate disposed near the top of the chamber. The precursor gas within the chamber may be energized (e.g., excited) into a plasma by applying RF power from one or more radio frequency (RF) sources coupled to the chamber to a conductive showerhead disposed within the chamber. The excited gas reacts to form a layer of material on the surface of the substrate disposed on the temperature-controlled substrate support.
[0003]
[0003] The size of the substrate for forming an electronic device is, today, usually greater than 1 square meter in surface area. It is difficult to achieve film thickness uniformity across these substrates. Film thickness uniformity becomes even more difficult as the size of the substrate increases. Traditionally, plasmas are generated in a conventional chamber for ionizing gas atoms and generating radicals of the deposition gas. They are useful for depositing a film layer on a substrate of this size using a capacitively coupled electrode configuration. Recently, there has been interest in inductively coupled plasma configurations, which have historically been used in depositions on round substrates or wafers, for use in deposition processes for these large substrates. However, inductive coupling utilizes a dielectric material as a structural support component. These dielectric materials do not have the structural strength to withstand the structural loads that occur due to the presence of atmospheric pressure on one side of the large area structural portion of the chamber on the atmosphere side and reduced pressure conditions on the other side, as is used in conventional chambers for these larger substrates. Thus, inductively coupled plasma systems are being developed for plasma processes on large area substrates. However, the process uniformity, for example, the uniformity of the deposition thickness across a large substrate, does not become as desired.
[0004]
[0004] Accordingly, what is needed in the art is a chamber lid assembly for use with large area substrates configured to improve film thickness uniformity across the entire deposition surface of the substrate.
SUMMARY OF THE INVENTION
[0005]
[0005] Embodiments described herein provide a lid plate of a chamber for independently controlling the plasma density and gas distribution within the internal space of the chamber. In one embodiment, the lid assembly includes a gas distribution assembly including a plurality of diffuser plates, a portion of the diffuser plates being separated by a dielectric plate, and each of the plurality of diffuser plates including a groove formed in a first plane and one or more orifice holes formed between the plane of the groove and a second plane opposite the first plane.
[0006]
[0006] In another embodiment, the lid plate includes a gas distribution assembly including a plurality of diffuser plates, a portion of the plurality of diffuser plates being separated by a plurality of dielectric plates and a plurality of separator plates, and each of the plurality of diffuser plates including a groove formed in a first surface and one or more orifice holes formed between the surface of the groove and a second surface opposite the first surface.
[0007]
[0007] In yet another embodiment, the lid plate includes a gas distribution assembly including a plurality of diffuser plates, the plurality of diffuser plates including a plurality of inner diffuser plates and outer diffuser plates on both sides of the plurality of inner diffuser plates, the plurality of inner diffuser plates being separated by one or more dielectric plates and a plurality of separator plates, and each of the plurality of diffuser plates including a groove formed in a first surface and one or more orifice holes formed between the surface of the groove and a second surface opposite the first surface.
[0008]
[0008] To enable a more detailed understanding of the features of the present disclosure described above, a more specific description of the present disclosure briefly summarized above is obtained by referring to the embodiments, some of which are illustrated in the accompanying drawings. However, it should be noted that the accompanying drawings show only exemplary embodiments and should not be considered as limiting the scope of the present disclosure, and other equally valid embodiments may be permitted.
Brief Description of the Drawings
[0009]
Figure 1
[0009] It is a schematic cross-sectional view of a chamber according to an embodiment.
Figure 2
[0010] It is a schematic cross-sectional view of a plate according to an embodiment.
Figure 3A
[0011] It is a schematic perspective view of a plate according to an embodiment.
Figure 3B
[0012] It is a negative perspective view of a plate according to an embodiment.
Figure 4
[0013] It is a schematic bottom view of a plate according to an embodiment.
Figure 5
[0014] It is a schematic bottom view of an embodiment of a lid plate.
Figure 6A
[0015] It is a cross-sectional view of the lid plate of FIG. 5.
Figure 6B
Figure 7
[0016] It is an enlarged cross-sectional view of the lid plate from FIG. 6A.
Figure 8
[0017] It is a plan view of the back side of the diffuser plate.
Figure 9A
[0018] It is a cross-sectional view from FIG. 8 showing various configurations of the diffuser plate.
Figure 9B
Figure 9C
Figure 10
[0019] It is a schematic bottom view of another embodiment of the lid plate.
Mode for Carrying Out the Invention
[0010]
[0020] For ease of understanding, the same reference numerals are used to denote the same elements common to the figures whenever possible. The elements and features of one embodiment are considered to be beneficially incorporated into other embodiments without further description.
[0011]
[0021] The embodiments described herein provide a lid assembly for a chamber to independently control plasma density and gas distribution within the interior space of the chamber. The lid assembly includes a plasma generation system and a gas distribution assembly. The plasma generation system includes a plurality of dielectric plates having a bottom surface oriented towards a reduced pressure and a top surface operable to be oriented towards an atmospheric pressure. One or more coils are disposed on or above the plurality of dielectric plates. The gas distribution assembly includes a first diffuser and a second diffuser. The first diffuser includes a plurality of first channels that intersect a plurality of second channels of the second diffuser.
[0012]
[0022] FIG. 1 is a schematic cross-sectional view of a chamber 100, such as a PECVD chamber, that can benefit from the embodiments described herein. Suitable chambers can be obtained from Applied Materials, Inc., in Santa Clara, Calif. It should be understood that the systems described below are exemplary chambers and that other chambers, including chambers from other manufacturers, may be used or modified to implement aspects of the present disclosure. Chamber 100 includes a chamber body 104, a lid assembly 106, and a substrate support assembly 108. Lid assembly 106 is disposed at the upper end of chamber body 104.
[0013]
[0023] The substrate support assembly 108 is at least partially disposed within the internal space of the chamber body 104. The substrate support assembly 108 includes a substrate support 110 and a shaft 112. The substrate support 110 has a support surface 118 for supporting the substrate 102. In one embodiment that can be combined with other embodiments described herein, the substrate 102 is a large-area substrate such as a substrate having a surface area of about 1 square meter or more. However, the substrate 102 is not limited to any particular size or shape. In one aspect, the term "substrate" refers to any polygonal, square, rectangular, curved, or other non-circular workpiece, such as a glass or polymer substrate used in the manufacture of flat panel displays.
[0014]
[0024] The substrate support 110 typically includes a heating element (not shown). The substrate support 110 is movably disposed within the internal space of the chamber body 104 by a shaft 112 that extends through the chamber body 104. In that case, the shaft 112 is connected to a substrate support drive system 114. The substrate support drive system 114 moves the substrate support 110 between a lifted processing position (shown) and a lowered position that facilitates the transfer of substrates into and out of the internal space of the chamber body 104 through an opening 116 formed through the chamber body 104. In one embodiment that can be combined with other embodiments described herein, the substrate support drive system 114 rotates the shaft 112 and the substrate support 110.
[0015]
[0025] The lid assembly 106 includes a lid plate 122 disposed at the upper end of the chamber body 104. The lid plate 122 includes a gas distribution assembly 124 and a plasma generation system 126. The gas distribution assembly 124 includes one or more first diffuser inlets 130 of a first diffuser 128 disposed within the lid plate 122. In one embodiment that may be combined with other embodiments described herein, the lid plate 122 includes an aluminum-containing material. In one embodiment that may be combined with other embodiments described herein, the gas distribution assembly 124 includes one or more second diffuser inlets (shown in FIGS. 3A and 3B) coupled to a second diffuser 136 disposed within the lid plate 122. The one or more first diffuser inlets 130 are connectable to a first gas source 134. Each of the one or more first diffuser inlets 130 is in fluid communication with a first channel (shown in FIG. 3B) of the first diffuser 128. The one or more second diffuser inlets (shown in FIGS. 3A and 3B) are connectable to a second gas source 138. Each of the one or more second diffuser inlets (shown in FIGS. 3A and 3B) is in fluid communication with a second channel (shown in FIG. 3B) of the second diffuser 136. In some embodiments, the gas provided by the first gas source 134 is the same as the gas provided by the second gas source 138.
[0016]
[0026] The first diffuser 128 supplies one or more first gases from the first gas source 134 to the processing region 120 between the lower surface 160 of the lid plate 122 and the substrate support 110. The one or more first gases are provided to the processing region 120 through a plurality of first holes (shown in FIG. 4) of each first channel (shown in FIG. 3B) of the first diffuser 128. A flow controller 141, such as a mass flow control (MFC) device, is disposed between each of the one or more first diffuser inlets 130 and the first gas source 134 to control the flow rate of the first gas from the first gas source 134 to each first channel (shown in FIG. 3B), and thus provides independent control of the first gas flow within the processing region 120. One or more second gases are provided to the processing region 120 through a plurality of second holes (shown in FIG. 4) of each second channel (shown in FIG. 3B) of the second diffuser 136. The flow controller 141 is disposed between each of the one or more second diffuser inlets (shown in FIGS. 3A and 3B) and the second gas source 138 to control the flow rate of the second gas from the second gas source 138 to each second channel (shown in FIG. 3B), and thus provides independent control of the second gas flow within the processing region 120. A pump 155 is in fluid communication with the processing region 120. The pump 155 is operable to control the pressure within the processing region 120 and to discharge gases and by-products from the processing region 120. In one embodiment, each of the first gas and the second gas is the same gas.
[0017]
[0027] The plasma generation system 126 includes one or more cavities 140 arranged in parallel within the lid plate 122. Each of the one or more cavities 140 includes recesses (shown in FIGS. 2 to 4) for a plurality of dielectric plates 150. Each of the one or more cavities 140 includes one or more coils 142 disposed on or above the plurality of dielectric plates 150. The plurality of dielectric plates 150 provide a physical barrier having a structural strength to withstand the structural loads generated by the presence of atmospheric pressure within the one or more cavities 140 and the presence of reduced pressure within the internal space of the chamber body 104. Each of the plurality of dielectric plates 150 includes a lower surface 151 and an upper surface 153 directed opposite the lower surface 151. The lower surface 151 is directed toward (i.e., towards) the processing region 120. Thereby, the lower surface 151 of each of the dielectric plates 150 is exposed to a first pressure within the processing region 120 such as reduced pressure. The upper surface 153 is directed opposite to (i.e., away from) the processing region 120. Thereby, the upper surface 153 of each of the dielectric plates 150 is exposed to a second pressure outside the processing region 120 such as atmospheric pressure. In one embodiment that can be combined with other embodiments described herein, the first pressure and the second pressure are different.
[0018]
[0028] In one embodiment that can be combined with other embodiments described herein, the dielectric plate is aluminum oxide (Al 2 O 3 )), aluminum nitride (AlN), quartz, zirconium dioxide (ZrO 2) contains at least one of zirconium nitride (ZrN) and a glass material. Each coil 142 has an electrical input terminal 144 connected to a power supply 152 and an electrical output terminal 146 connected to ground 154. In one embodiment that can be combined with other embodiments described herein, each coil 142 is connected to the power supply 152 via a matching box 148 having a matching circuit for adjusting electrical characteristics such as the impedance of the coil 142. Each coil 142 is configured to generate an electromagnetic field that supplies energy to at least one of one or more first gases and a second gas into an inductively coupled plasma. By independently connecting each coil 142 of each of the one or more cavities 140 to a respective power supply 152, independent control of the power level and frequency provided to each coil 142 becomes possible. With independent control of the power level and frequency provided to each coil 142, the density of the inductively coupled plasma can be independently controlled within the process zones 156a, 156b, 156c, 156d (collectively referred to as the process zone 156) corresponding to each coil 142. A controller 158 is coupled to the chamber 100 and is configured to control aspects of the chamber 100 during processing.
[0019]
[0029] FIG. 2 is a schematic cross-sectional view of the lid plate 122. FIG. 2 shows one or more first diffuser inlets 130 of a first diffuser 128 of the gas distribution assembly 124, as well as one or more cavities 140, each coil 142, each electrical input terminal 144, each electrical output terminal 146, and a recess 201 for a plurality of dielectric plates 150 of the plasma generation system 126. In one embodiment that can be combined with other embodiments described herein, the lid assembly 106 includes a heat exchange system that includes a plurality of fluid channels (shown in FIG. 3B) that can be coupled to a heat exchanger (not shown). A heat exchanger, such as a cooler, is in fluid communication with each fluid channel via a fluid inlet 202 and a fluid outlet 204 of the plurality of fluid channels (shown in FIG. 3B). Thereby, the lid plate 122 is maintained at a predetermined temperature. Each coil 142 has one or more turns.
[0020]
[0030] FIG. 3A is a schematic perspective view of a lid plate 122 without a plurality of dielectric plates 150 and each coil 142. FIG. 3B is a negative perspective view of the lid plate 122 without a plurality of dielectric plates 150 and coils 142. The lid plate 122 includes a plurality of first channels 302. Each of the first channels 302 is disposed or formed within the lid plate 122. Each of the plurality of first channels 302 is disposed adjacent to one of the recesses 201. Each of the recesses 201 is between two adjacent first channels 302 disposed within the lid plate 122. Each of the first channels 302 is in fluid communication with at least one of the first diffuser inlets 130 of one or more first diffuser inlets 130.
[0021]
[0031] In one embodiment that can be combined with other embodiments described herein, the lid plate 122 includes a plurality of second channels 304 disposed or formed within the lid plate 122. Each of the second channels 304 of the plurality of second channels 304 is disposed between two adjacent cavities 140 of one or more cavities 140. Each of the second channels 304 is in fluid communication with at least one of the second diffusers of one or more second diffuser inlets 306 formed within the lid plate 122. In another embodiment that can be combined with other embodiments described herein, the lid plate 122 includes a plurality of fluid channels 308 of a heat exchange system that can be coupled to a heat exchanger (not shown). A heat exchanger, such as a cooler, is in fluid communication with the plurality of fluid channels 308 via a fluid inlet 202 and a fluid outlet 204. The plurality of fluid channels 308 are disposed adjacent to one or more cavities 140 and the recesses outside the recess 201.
[0022]
[0032] Figure 4 is a schematic bottom view of the lid plate 122. As shown in Figure 4, each of the first channels 302 intersects each of the second channels 304. In one embodiment that can be combined with other embodiments described herein, each of the first channels 302 is orthogonal to each of the second channels 304. Each of the dielectric plates 150 is disposed adjacent to the first channels 302 and adjacent to at least one of the second channels 304. Each of the plurality of first channels 302 includes a plurality of first holes 402 extending through the lid plate 122. The flow controller 141 controls the flow rate of the first gas from the first gas source 134 through the plurality of first holes 402. By controlling the flow rate of the first gas, independent control of the first gas flow in the first zones 406a, 406b, 406c, 406d, 406e, 406f, 406g, 406h, 406i (collectively referred to as the first zone 406) of the processing region 120 corresponding to each of the plurality of first channels 302 is provided. In one embodiment having a second diffuser 136 that can be combined with other embodiments described herein, each of the plurality of second channels 304 includes a plurality of second holes 404 extending through the lid plate 122. The flow controller 141 controls the flow rate of the second gas from the second gas source 138 through the plurality of second holes 404. By controlling the flow rate of the second gas, the second gas flow in the second zones 408a, 408b, 408c (collectively referred to as the second zone 408) of the processing region 120 corresponding to each of the plurality of second channels 304 can be independently controlled.
[0023]
[0033] Figure 5 is a schematic bottom view of one embodiment of the lid plate 122. The lid plate 122 of Figure 5 schematically shows the structure of the bottom surface 160 of the lid plate 122. Although the first zone 406 and the second zone 408 are not shown, the lid plate 122 may include one or more zones as described above.
[0024]
[0034] The lid plate 122 includes a plurality of diffuser plates shown as an outer diffuser plate 500 and an inner diffuser plate 505. Each of the inner diffuser plates 505 is separated by and / or disposed between a dielectric plate 150 and / or a separation plate 510. Each of the outer diffuser plates 500 has a dielectric plate 150 and one or more separation plates 510 on one side thereof.
[0025]
[0035] Each of the outer diffuser plate 500, the inner diffuser plate 505, and the separation plate 510 may be made of a conductive material such as aluminum.
[0026]
[0036] In this embodiment, each of the separation plate 510, and the outer diffuser plate 500 and the inner diffuser plate 505 includes a plurality of fasteners 515 and 520, respectively. Each of the fasteners 515 and 520 may be made of a ceramic material or a metal material. Each of the outer diffuser plate 500 and the inner diffuser plate 505 may be integral (i.e., a one-piece structure), or each of the outer diffuser plate 500 and the inner diffuser plate 505 may include a plurality of components. Similarly, the dielectric plate 150 may include a single piece of material or a plurality of plates. In embodiments where the dielectric plate 150 is a plurality of plates, each of the dielectric plates 150 may be coupled to the lid plate 122 using a fastener (not shown), and / or may be coupled to the separation plate 510 and / or the outer diffuser plate 500 and the inner diffuser plate 505.
[0027]
[0037] Each of the outer diffuser plate 500 and the inner diffuser plate 505 includes one or more orifice holes 525 (e.g., the first hole 402). Each of the one or more orifice holes 525 is in fluid communication with a corresponding one of the first channels 302 (also shown in FIG. 3B). In some embodiments, each of the separation plates 510 includes one or more orifice holes 530 (e.g., the second hole 404). Each of the one or more orifice holes 530 of the separation plate 510 is in fluid communication with a corresponding one of the second channels 304 (also shown in FIG. 3B).
[0028]
[0038] FIGS. 6A and 6B are cross-sectional views of the lid plate 122 from FIG. 5. In FIG. 6A, a portion of the outer diffuser plate 505 and the inner diffuser plate 500 is shown together with a portion of the separation plate 510 therebetween. In FIG. 6B, one of the inner plates 505 is shown along its longitudinal direction.
[0029]
[0039] FIG. 7 is an enlarged cross-sectional view of the lid plate 122 from FIG. 6A. One of the inner diffuser plates 505, as well as a portion of two separation plates 510, is shown. The inner diffuser plate 505 includes a groove 700 that is in fluid communication with one of the plurality of first channels 302 and one or more orifice holes 525. Although not shown, the other of the inner diffuser plates 505 may be similarly configured. In addition, the outer diffuser plate 500 includes the groove 700 and one or more orifice holes 525.
[0030]
[0040] The inner diffuser plate 505 is coupled to the body 705 of the lid plate 122 by fasteners 520. Each fastener 520 is disposed within respective dish holes 710 on both sides of the groove 700 and one or more orifice holes 525. Similarly, the separation plate 510 is coupled to the body 705 by a fastener 715 (only one is shown). The fastener 715 is disposed within a dish hole 720. The fasteners 715 and 520 extend within their respective dish holes to the (lower) surface 725A of the separation plate 510 and the (lower) surface 725B of the inner diffuser plate 505. The surfaces 725A and 725B are planar or flat. Thereby, those surfaces are coplanar with each other. Additionally, the extensions of the fasteners 715 and 520 within their respective dish holes present a flat or planar lower surface (i.e., no protrusions or depressions). Thereby, more uniform plasma formation is promoted. Although not shown, each of the dielectric plates 150 (i.e., the lower surface 151) is also coplanar with the surface 725B.
[0031]
[0041] The groove 700 and the first channel 302 are fluidly sealed by an elastomeric seal 730 disposed within a groove 735 formed within the body 705. The elastomeric seal 730 is sized to surround the groove 700 and the first channel 302. The elastomeric seal 730 may be an elongated O-ring. The elastomeric seal 730 is compressed against a sealing surface 740 of the inner diffuser plate 505. The sealing surface 740 is smoother than the remainder of the surface 725B and the back surface 745, as well as the other outer surfaces of the inner diffuser plate 505. In some embodiments, the sealing surface 740 includes a surface finish of about 16 (root mean square (RMS)) or 16 microinches (average surface roughness (Ra)).
[0032]
[0042] FIG. 8 is a plan view of the back surface 745 of a diffuser plate 800. The diffuser plate 800 may be one of the outer diffuser plates 500 or one of the inner diffuser plates 505.
[0033]
[0043] The diffuser plate 800 includes a length 805 that is longer than the length or width of a substrate (not shown). In one embodiment, the length 805 is from about 5 feet to about 6 feet or longer. The sealing surface 740 is shown surrounding the groove 700. Additionally, a plurality of holes 810 are disposed along the length 805 of the diffuser plate 800. Each hole 810 is adapted to receive a fastener 520 (shown in FIG. 7). The holes 810 are formed between the edge 815 of the diffuser plate 800 and the sealing surface 740. Each fastener 520 is a screw or bolt having a tool interface such as a hex head or a recessed interface that can be used with a driver that can be used with a screwdriver, a hex key, a bit commercially available under TORX®.
[0034]
[0044] The orifice holes 525 are not shown in this drawing but are formed in the groove 700 at each of a plurality of orifice positions 825. The length 820 indicates the positions where the orifice holes 525 start and end along the groove 700. The length 820 is shorter than the length 805. The orifice positions 825 are positioned within the range of the length 820. The orifice positions 825 may be equally pitched or unequally pitched along the length 820. The pitch between the orifice positions 825 may be from about 0.25 inches to about 1 inch.
[0035]
[0045] FIGS. 9A - 9C are cross-sectional views from FIG. 8 showing various configurations of the diffuser plate 800. In particular, FIGS. 9A - 9C show variations in the profile of the groove 700 and / or the orifice holes 525.
[0036]
[0046] In FIG. 9A, a diffuser plate 900A is shown, including a groove 700 having a semi-circular profile. Additionally, three orifice holes 525 are shown to be formed between a first surface 905 and a surface 910 of the groove 700. The surface 910 of the groove 700 is a radius surface or a curved surface. Although three orifice holes 525 are illustrated, the number of orifice holes may be one to five or more at each of the orifice positions 825 shown in FIG. 8.
[0037]
[0047] The orifice holes 525 shown in FIG. 9A include a central orifice hole 915 and two outer orifice holes 920. The diameter of the central orifice hole 915 and the diameter of the outer orifice holes 920 may be the same or different. The diameter of some or all of the central orifice hole 915 and the outer orifice holes 920 may be from about 0.008 inches to about 0.04 inches. The lengths of the outer orifice holes 920 may be the same or substantially equal. On the other hand, the length of the central orifice hole 915 is shorter than that of the outer orifice holes 920.
[0038]
[0048] The central orifice hole 915 is provided along an axis 925 at an angle of about 90 degrees from the first surface 905. The outer orifice holes 920 are formed at an acute angle 930 from the axis 925. The acute angle 930 may be from about 20 degrees to about 50 degrees from the axis 925, for example, from about 35 degrees to about 45 degrees, for example, about 40 degrees.
[0039]
[0049] Although not shown, other orifice holes 525 (FIG. 8) at other orifice positions 825 along a length 820 may be the same as or different from the central orifice hole 915 and the outer orifice holes 920 shown in FIG. 9A. Additionally, the surface 910 may be constant along a length 805 (FIG. 8). However, the surface 910 may be different along the length 805. For example, the groove 700 may be deeper at the central portion of the diffuser plate 800 and shallower at the end portion of the diffuser plate 800 along the length 805.
[0040]
[0050] Figure 9B shows a diffuser plate 900B that is substantially the same as the diffuser plate 900A shown in Figure 9A, except for the following exceptions. The groove 700 has a square profile, and the outer orifice hole 920 includes a flared portion 935. The flared portion 935 connects the outer orifice hole 920 to the surface 910 of the groove 700. The groove 700 includes two side surfaces 940 that extend at an angle perpendicular to the surface 910.
[0041]
[0051] Figure 9C shows a diffuser plate 900C that is substantially the same as the diffuser plate 900A shown in Figure 9A, except for the following exceptions. The diffuser plate 900C includes a single orifice hole 945 at the orifice position 825. The configuration of the diffuser plate 900C can be beneficially utilized as the outer diffuser plate 500 shown in Figure 5. The single orifice hole 945 may be angled at an acute angle 930 and can direct gas towards the center of the substrate 102 (shown in Figure 1).
[0042]
[0052] Figure 10 is a schematic bottom view of another embodiment of the lid plate 122. The outer diffuser plate 500 and the inner diffuser plate 505 are shown as a single integral piece in other drawings, but the lid plate 122 shown in Figure 10 includes a plurality of divided diffuser plates. They are shown as a first plurality of outer diffuser plates 1000 and a second plurality of inner diffuser plates 1005. The first plurality of outer diffuser plates 1000 and the second plurality of inner diffuser plates 1005 are arranged in a plurality of rows 1010. Each row 1010 is substantially parallel to the other rows 1010.
[0043]
[0053] The first plurality of outer diffuser plates 1000 includes two or more diffuser segments 1015, and the second plurality of inner diffuser plates 1005 includes two or more diffuser segments 1020. Each of the diffuser segments 1015 and the diffuser segments 1020 may be constructed similarly to the diffuser plate 800 shown in FIG. 8 and the diffuser plates 900A-900C shown in FIGS. 9A-9C, except for having a shorter length. The shorter lengths of the outer diffuser plate 1000 and the inner diffuser plate 1005 can minimize the effects of their thermal expansion and thermal contraction. Additionally, the flow of gas through each of the diffuser segments 1015 and 1020 may be independently controlled.
[0044]
[0054] In summary, a chamber lid assembly is provided for independently controlling the plasma density and gas distribution within the internal space of a chamber. By independently controlling the power level and frequency provided to each coil, it becomes possible to independently control the density of the inductively coupled plasma within the process zone corresponding to each coil. By controlling the flow rate of the first gas, independent control of the first gas flow within the first zone of the processing region corresponding to each of the plurality of first channels is provided. By controlling the flow rate of the second gas, independent control of the second gas flow within the second zone of the processing region corresponding to each of the plurality of second channels is provided. In some embodiments, a uniform gas flow across the processing region may be desired. However, in other embodiments, the gas flow across the processing region may not be uniform. A non-uniform gas flow may be desired due to some (one or more) physical structure and / or geometric shape of the chamber.
[0045]
[0055] The above description is directed to embodiments of the present disclosure, but other and further embodiments of the present disclosure may be devised without departing from the basic scope of the present disclosure, and the scope of the present disclosure is defined by the following claims.
Claims
1. 1. A lid plate comprising a gas distribution assembly comprising a plurality of diffuser plates, A lid plate, wherein portions of the diffuser plates are separated by dielectric plates, and each of the plurality of diffuser plates includes a groove formed in a first surface and one or more orifice holes formed between a surface of the groove and a second surface opposite the first surface.
2. The lid plate of claim 1 , wherein the plurality of diffuser plates further comprises a plurality of inner diffuser plates and outer diffuser plates on either side of the inner diffuser plates.
3. The lid plate of claim 2 , wherein each of the plurality of inner diffuser plates includes a plurality of orifice locations along its length, each of the plurality of orifice locations having the one or more orifice holes.
4. The lid plate of claim 3 , wherein the outer diffuser plate includes a plurality of orifice locations along its length, each of the plurality of orifice locations having a single orifice hole.
5. The lid plate of claim 2 , wherein the one or more orifice holes include a central orifice hole and two outer orifice holes on either side of the central orifice hole.
6. The lid plate of claim 5 , wherein the two outer orifice holes are angled relative to the central orifice hole.
7. The lid plate of claim 1 , wherein the groove comprises a semi-circular profile.
8. The lid plate of claim 1 , wherein the groove comprises a rectangular profile.
9. The lid plate of claim 1 , wherein the groove includes a depth that varies along its length.
10. 1. A lid plate comprising a gas distribution assembly comprising a plurality of diffuser plates, portions of the plurality of diffuser plates being separated by a plurality of dielectric plates and a plurality of separation plates, each of the plurality of diffuser plates including a groove formed in a first surface and one or more orifice holes formed between a surface of the groove and a second surface opposite the first surface.
11. The lid plate of claim 10 , wherein each of the plurality of diffuser plates is oriented in a plurality of parallel rows and each of the plurality of separator plates is oriented in a plurality of columns.
12. The lid plate of claim 10 , wherein the groove comprises a semi-circular profile.
13. The lid plate of claim 10 , wherein the groove comprises a rectangular profile.
14. The lid plate of claim 10 , wherein the groove includes a depth that varies along its length.
15. 1. A lid plate comprising a gas distribution assembly comprising a plurality of diffuser plates, the plurality of diffuser plates comprising a plurality of inner diffuser plates and an outer diffuser plate on either side of the inner diffuser plates, the plurality of inner diffuser plates being separated by one or more dielectric plates and a plurality of separation plates, each of the plurality of diffuser plates including a groove formed in a first surface and one or more orifice holes formed between a surface of the groove and a second surface opposite the first surface.
Citation Information
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