Electrical device

Abstract

To increase the versatility of a power supply device.SOLUTION: A power supply device includes a power storage device and a power supply device. The power storage device includes data that identifies the power storage device. The power storage device includes a power storage body, a switch that controls whether to supply the power supplied from the power supply device to the power storage body, and a control circuit with a function of controlling a conductive state of the switch in accordance with a control signal input from the power supply device. The power supply device includes a signal processing circuit with functions of identifying the power storage device by the data input from the power storage device, generating the control signal, and outputting the control signal to the power storage device.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to objects (products, machines, manufactures, compositions (including matter in a position), and methods (processes, including simple methods and production methods). In particular, one aspect of the present invention relates to a power storage system, a power storage device, a semiconductor device, a display device, a light-emitting device, or other electrical equipment, or a manufacturing method thereof. In particular, one aspect of the present invention relates to a power storage system, a power storage device, a semiconductor device, a display device, a light-emitting device, or other electrical equipment having an oxide semiconductor, or a manufacturing method thereof.

Background Art

[0002] In recent years, power storage devices have been mounted on various electrical equipment such as mobile terminals typified by mobile phones and smartphones, power tools, and electric vehicles.

[0003] The power storage device has a secondary battery such as a lithium-ion battery that can store electricity by charging and can be repeatedly used.

[0004] In such electrical equipment equipped with a power storage device, for example, the power storage device can be charged by connecting to a power supply device (for example, Patent Document 1).

[0005] Furthermore, in such electrical equipment equipped with the power storage device, the power storage device can be charged without physically connecting to the power supply device by wirelessly supplying power from the power supply device (for example, Patent Document 2). As such a power supply method, for example, Patent Document 2 discloses a power supply method by electromagnetic induction and magnetic field resonance.

[0006] ​​​​​​​​​​​In the power supply methods described in Patent Document 1 and Patent Document 2, the power storage device can be charged by using a power supply device that conforms to the specifications of the power storage device.

Prior Art Documents

Patent Documents

[0007]

Patent Document 1

Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0008] In one aspect of the present invention, one of the problems is to enhance the versatility of the power supply device.

[0009] Alternatively, in one aspect of the present invention, one of the problems is to enhance the versatility of the power storage system using the power supply device.

[0010] Alternatively, in one aspect of the present invention, one of the problems is to reduce the power consumption of the power storage device.

[0011] Alternatively, in one aspect of the present invention, one of the problems is to improve the reliability of the power storage device.

[0012] Alternatively, in one aspect of the present invention, one of the problems is to provide a novel power storage device. Or, in one aspect of the present invention, one of the problems is to provide a good power storage device.

[0013] One aspect of the present invention aims to provide a semiconductor device with a low off-current. Alternatively, one aspect of the present invention aims to provide a semiconductor device with low power consumption. Alternatively, one aspect of the present invention aims to provide a semiconductor device using a transparent semiconductor layer. Or, one aspect of the present invention aims to provide a semiconductor device with low power consumption. Alternatively, one aspect of the present invention aims to provide a semiconductor device using a transparent semiconductor layer. Or, one aspect of the present invention aims to provide a semiconductor device using a transparent semiconductor layer. Or,​​ One aspect of the disclosure aims to provide a semiconductor device using a highly reliable semiconductor layer.

[0014] In particular, one aspect of the present invention may be able to solve at least one of the problems described above. Note that one aspect of the present invention does not necessarily have to solve all of these problems. Other problems will become apparent from the descriptions in the specification, drawings, claims, etc., and it is possible to extract these other problems from the descriptions in the specification, drawings, claims, etc.

Means for Solving the Problems

[0015] In one aspect of the present invention, for example, it may utilize at least one of a power storage device and a power supply device.

[0016] In one aspect of the present invention, by optimizing the charging conditions of a power storage device using data for identifying the power storage device (also referred to as identification data), for example, it is possible to charge a plurality of power storage devices with different specifications by a power supply device, thereby improving versatility.

[0017] Note that, in this specification, the data for identifying a power storage device includes the specifications of the power storage device such as the mechanical characteristics and electrical characteristics of the power storage device, and the internal information of the power storage device such as the degree of progress of deterioration and the remaining amount of stored electrical energy. Examples of the information of the power storage device include, for example, the average voltage of the power storage device, the capacity of the power storage device, the energy density of the power storage device, the resistance of the power storage device, the output power of the power storage device, the cycle characteristics of the power storage device, the temperature of the power storage device, the operating temperature range of the power storage device, the allowable charging current of the power storage device, etc. Or, as the information of the power storage device, the manufacturing manufacturer of the power storage device It may include the serial number of the power storage device, the weight of the power storage device, the size of the power storage device, etc. Note that the identification data may be used as individual identification data.

[0018] One aspect of the present invention has a power storage device and a power supply device. The power storage device has data for identifying the power storage device. The power storage device includes a power storage body, a switch for controlling whether to supply the power supplied from the power supply device to the power storage body, and a control circuit having a function of controlling the conduction state of the switch according to a control signal input from the power supply device. The power supply device has a signal processing circuit having a function of identifying the power storage device based on the data input from the power storage device, generating a control signal, and outputting the control signal to the power storage device. It is a power storage system. A power storage device according to one aspect of the present invention includes a power receiving circuit, a data communication circuit, a power storage body, a first transistor provided between the power receiving circuit and the power storage body, and a control circuit electrically connected to the gate of the first transistor and the power storage body. The control circuit includes a processor electrically connected to the gate of the first transistor, a memory electrically connected to the processor, and a controller electrically connected to the processor and the memory. The memory has data for identifying the power storage device. The processor has a register. The register has a first storage circuit for holding data during a period when power is supplied from the power storage body to the processor, and a second storage circuit for holding data during a period when the supply of power to the processor from the power storage body stops. The second storage circuit has a second transistor for controlling writing and holding of data. The second transistor is a power storage device in which the off-current per 1 μm of channel width is 100 zA or less. Whether to supply the power supplied from the power supply device to the power storage body The conduction state of the switch is controlled according to the control signal input from the power supply device Based on the input data, identify the power storage device, generate a control signal, and output it to the power storage device It is a power storage system with a signal processing circuit.

[0019] A power storage device according to one aspect of the present invention includes a power receiving circuit, a data communication circuit, a power storage body, a first transistor provided between the power receiving circuit and the power storage body, and a control circuit electrically connected to the gate of the first transistor and the power storage body. A first transistor provided between the power receiving circuit and the power storage body The control circuit is electrically connected to the gate of the first transistor A processor electrically connected to the gate of the first transistor, a memory electrically connected to the processor, and a controller electrically connected to the processor and the memory The memory has data for identifying the power storage device The processor has a register A first storage circuit for holding data during a period when power is supplied from the power storage body to the processor A second storage circuit for holding data during a period when the supply of power to the processor from the power storage body stops The second storage circuit has a second transistor for controlling writing and holding of data The second transistor is a power storage device in which the off-current per 1 μm of channel width is 100 zA or less It is a power storage device.

Advantages of the Invention

[0020] According to one aspect of the present invention, the versatility of a power supply device or a power storage system using the power supply device can be enhanced. This can be achieved.

[0021] According to one aspect of the present invention, the power consumption of the power storage device can be reduced.

[0022] According to one aspect of the present invention, the reliability of the power storage device can be improved.

Brief Description of the Drawings

[0023]

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Embodiments for Carrying Out the Invention

[0024] Hereinafter, embodiments will be described with reference to the drawings. However, the embodiments can be implemented in many different ways, and it is easy for those skilled in the art to make various changes to the form and details without departing from the spirit and its scope. Therefore, the present invention is not limited to the description of the embodiments shown below. In the configurations described below, the same reference numerals are used to indicate the same parts among different drawings, and detailed descriptions of the same parts or parts having the same functions are omitted.

[0025] Note that the content described in one embodiment (even part of the content) can be applied, combined, or replaced with the content described in another part (even part of the content) in the same embodiment, and / or the content described in one or more other embodiments (even part of the content). That is, combinations, replacements, etc. can be made.

[0026] Note that the content described in the embodiments refers to the content described using various figures in each embodiment, or the content described using the text described in the specification.

[0027] Note that the figure (even a part thereof) described in one embodiment can be combined with another part of that figure, another figure (even a part thereof) described in that embodiment, and / or one or more figures (even a part thereof) described in one or more other embodiments to form even more figures.

[0028] Note that in this specification and the like, for all terminals of active elements (such as transistors and diodes), passive elements ( capacitive elements, resistive elements, etc.), etc., even if the connection destination is not specified, a person skilled in the art may be able to constitute one aspect of the invention. That is, even if the connection destination is not specified, one aspect of the invention may be clear and it may be possible to determine that it is described in this specification and the like. In particular, when there are multiple connection destinations for a terminal, it is not necessary to limit the connection destination of that terminal to a specific location. Therefore, for some terminals of active elements (such as transistors and diodes ), passive elements (such as capacitive elements and resistive elements), etc., it may be possible to constitute one aspect of the invention by specifying the connection destination.

[0029] Note that for content not defined in the drawings or text in the specification, an invention can be constituted by excluding that content. Or, for a certain value, when a numerical range indicated by an upper limit value and a lower limit value, etc. is described, the invention can be defined by arbitrarily narrowing the numerical range or excluding one point within the numerical range to exclude a part of the numerical range. By these means, for example, the prior art can be avoided. It can be defined that the prior art does not fall within the technical scope of the present invention.

[0030] In addition, in this specification and the like, for a certain circuit, if at least the connection destination is specified, a person skilled in the art may be able to specify the invention. Or, for a certain circuit, if at least the function is specified, a person skilled in the art may be able to specify the invention. That is, if the function is specified, one aspect of the invention is clear and it may be possible to determine that it is described in this specification and the like. Therefore, for a certain circuit, even if the function is not specified, if the connection destination is specified, it is disclosed as one aspect of the invention and can constitute one aspect of the invention. Or, for a certain circuit, even if the connection destination is not specified, if the function is specified, it is disclosed as one aspect of the invention and can constitute one aspect of the invention. That is, if the function is specified, one aspect of the invention is clear and it may be possible to determine that it is described in this specification and the like. Therefore, for a certain circuit, even if the function is not specified, if the connection destination is specified, it is disclosed as one aspect of the invention and can constitute one aspect of the invention. Or, for a certain circuit, even if the connection destination is not specified, if the function is specified, it is disclosed as one aspect of the invention and can constitute one aspect of the invention. destination is specified, it is disclosed as one aspect of the invention and can constitute one aspect of the invention. Or, for a certain circuit, even if the connection destination is not specified, if the function is specified, it is disclosed as one aspect of the invention and can constitute one aspect of the invention. destination is specified, it is disclosed as one aspect of the invention and can constitute one aspect of the invention. Or, for a certain circuit, even if the connection destination is not specified, if the function is specified, it is disclosed as one aspect of the invention and can constitute one aspect of the invention. destination is specified, it is disclosed as one aspect of the invention and can constitute one aspect of the invention. Or, for a certain circuit, even if the connection destination is not specified, if the function is specified, it is disclosed as one aspect of the invention and can constitute one aspect of the invention. is possible.

[0031] Also, ordinal numbers such as first and second are attached to avoid confusion of components, and the number of each component is not limited to the ordinal number. is not limited to the ordinal number.

[0032] (Embodiment 1) FIG. 1(A) is a diagram showing a configuration example of a power storage system. The power storage system shown in FIG. 1(A) includes a device 100 and a device 200.

[0033] Power is supplied to the device 100 from the device 200. Note that power may be supplied to the device 100 from another power source. The device 100 has a function of being able to input and output signals. The device 10 0 may have a function of being able to receive power wirelessly. In this case, the device 10 0 may be used as a power receiving device. Or the device 100 may have a function of being able to store power. 0 may be used as a power receiving device. Or the device 100 may have a function of being able to store power. This is also acceptable. In this case, the device 100 may be used as a power storage device. Note that the device 100 may have a function of receiving power wirelessly and a function of storing power. In this case, the device 100 may be used as a power receiving device, a power storage device, or a semiconductor device. The device 100 may be provided with a protection circuit having a function of preventing the destruction of the device 100 due to overcharging and over-discharging.

[0034] The device 100 has data 110. The data 110 is data for identifying the device 100. For example, a memory may be provided in the device 100, and the data 110 may be stored in the memory. Note that the data 110 may be used as identification data.

[0035] Power is supplied to the device 200 from an external power source 240 (see FIG. 4). As the external power source, for example, a commercial power source may be used. The device 200 has a function of supplying power to the device 100. The device 200 has a function of inputting and outputting signals. The device 200 may have a function of wirelessly transmitting power. In this case, the device 200 may be used as a power transmission device. Alternatively, the device 200 may have a function of supplying power to a power storage device. In this case, the device 200 may be used as a power supply device. Note that the device 200 may have a function of wirelessly transmitting power and a function of supplying power to a power storage device. In this case, the device 200 may be used as a power transmission device, a power supply device, or a semiconductor device.

[0036] In the power storage system shown in FIG. 1(A), power can be supplied from the device 200 to the device 100 wirelessly. In the power storage system shown in FIG. 1(A), the device 200 and the device 1 ​​It can transmit and receive signals with 0. Therefore, signals can be transmitted and received between the device 200 and the device 100 without contact. Moreover, it is not limited to this. As shown in Fig. 1(B), by connecting the device 100 to the device 200, power may be supplied from the device 200 to the device 100. Or, by connecting the device 100 to the device 200, signals may be transmitted and received between the device 200 and the device 100. When power or signals are supplied wirelessly, for example, radio waves in the 13.56 MHz band can be used. Moreover, it is not limited to this. For example, radio waves in the 135 kHz band, 433 MHz band, 952 MHz band, 2.45 GHz band, etc. may be used.

[0037] Furthermore, when power is supplied wirelessly, for example, methods such as electromagnetic induction method, electric field resonance method, magnetic field resonance method, or microwave method can be used. Note that "connection" includes cases where they are electrically connected, functionally connected, and directly connected. Furthermore, the connection relationship of each component shown in the embodiment is not limited only to the connection relationship shown in the figure or the text.

[0038] For example, when two objects are electrically connected, another element capable of electrical connection (for example, a switch, transistor, inductor, resistance element, diode, display element, light-emitting element, load, etc.) may be provided between the two objects.

[0039] When two objects are functionally connected, another circuit capable of functional connection (for example, a logic circuit (inverter, NAND circuit, NOR circuit, etc.), a signal conversion circuit (DA conversion circuit etc.)) may be provided between the two objects.

[0040]

[0041] ​​​​​​, an AD conversion circuit, a gamma correction circuit, etc.), or a potential level conversion circuit (a power supply circuit (a boost circuit , a buck circuit, etc.), or a level shifter circuit, etc.), a voltage source, a current source, a switching circuit, an amplification circuit (an operational amplifier, a differential amplifier circuit, a source follower circuit, a buffer circuit, etc.), a signal generation circuit, a memory circuit, or a control circuit, etc.) may be provided between two objects.

[0042] Note that the switch can be in a conductive state (on state) or a non-conductive state (off state), and has a function of controlling whether to allow current to flow or not, or a function of selecting and switching the path through which the current flows. For example, the switch has a function of selecting and switching whether to allow current to flow through a first path or a second path.

[0043] Next, a configuration example of the apparatus 100 will be described with reference to the circuit diagrams of FIGS. 2(A) and 2(B). .

[0044] The power storage element 111 has a power storage function. The power storage element 111 has a pair of terminals. One of the pair of terminals is connected to the terminal b of the apparatus 100 via, for example, transistors 131, 132, and 170, and the other is connected to the terminal d. Further, the power storage element 1 11 may be provided with two or more terminals, and the power storage element 111 may be charged by supplying power from an external power source via the terminals.

[0045] Examples of the power storage element 111 include, in addition to a lithium ion battery, a lead storage battery, a lithium ion polymer secondary battery, a nickel metal hydride storage battery, a nickel cadmium storage battery, a nickel iron storage battery, a nickel zinc storage battery, a silver oxide-zinc storage battery, etc. secondary batteries, a redox flow battery, a zinc · Liquid circulation type secondary batteries such as chlorine batteries and zinc bromine batteries, aluminum-air batteries, air-zinc batteries, mechanical charge type secondary batteries such as air-iron batteries, sodium-sulfur batteries, lithium secondary batteries of the high-temperature operation type such as iron sulfide batteries can be used. Note that it is not limited to this, and for example, a lithium-ion capacitor or the like may be used to configure the power storage body 111.

[0046] One of the source and drain of the transistor 132 is connected to the power storage body 111, and the other is connected to one of the source and drain of the transistor 131. The transistors 131 and transistor 132 have a function of being able to control the charge and discharge of the power storage body 111. The transistors 131 and transistor 132 can have, for example, a function as a protection switch for preventing overcharging and over-discharging of the power storage body 111. Alternatively, the transistors 1 31 and transistor 132 can have a function of being able to adjust the current flowing through the power storage body 111 and the circuit 113. A circuit having the transistors 131 and transistor 132 may be used as a protection circuit for controlling the charge and discharge of the power storage body 111. Note that the transistors 131 and transistor 132 may also be used as a switch. By configuring a switch using the transistors 131 and transistor 13 2, when the switch is turned off, the current flowing through the parasitic diodes generated in the transistors 131 and transistor 132 can be reduced. Note that it is not limited to the configuration shown in FIGS. 2(A) and 2(B), and for example, one transistor or three or more transistors may be used. Also, instead of the transistors 131 and transistor 132, a bipolar transistor, a diode, or a diode may be used. Note that it is not limited to the configuration shown in FIGS. 2(A) and 2(B), and for example, one transistor or three or more transistors may be used. Also, instead of the transistors 131 and transistor 132, a bipolar transistor, a diode, or a diode may be used. Instead of the transistors 131 and transistor 132, a bipolar transistor, a diode, or A logic circuit or the like combining these may also be used.

[0047] The potentials of the gates of transistor 131 and transistor 132 are controlled by, for example, circuit 113. It is controlled.

[0048] Circuit 113 has a function capable of controlling the conduction states of, for example, transistor 131, transistor 132, transistor 150, and transistor 170. Circuit 113 has a function capable of monitoring the charge state of the power storage body 111. Note that circuit 113 may be a control circuit. Alternatively, circuit 113 may be a microcomputer, an FPGA (Field Programmable Gate Array), or a CPU (Central Processing Unit).

[0049] Circuit 113 has, for example, a memory, a processor, and a controller. In the memory, for example, data 110 is stored. The processor has a function capable of generating a control signal based on data 110. The controller has a function capable of controlling the memory and the processor. Note that the memory may store, for example, program data necessary for driving the processor. As the program data, for example, program data for causing the processor to control the potentials of the gates of transistor 131, transistor 132, transistor 150, and transistor 170 in response to a data signal input from circuit 142 can be mentioned. 170 can be mentioned. There is.

[0050] Circuit 141 has an antenna 114, a circuit 115, and a circuit 116. Circuit 141 has a function capable of wirelessly receiving power. Note that circuit 141 may be a power receiving circuit. It may also be possible.

[0051] In addition, the antenna 114 may be used as an antenna circuit. At this time, the antenna circuit has an antenna and a capacitor. and a capacitor.

[0052] The circuit 115 has a function of rectifying the alternating current generated by receiving radio waves via the antenna 114. The circuit 115 may be used as a rectifier circuit. Note that the circuit 115 does not necessarily have to be provided. The circuit 115 has a function of rectifying the alternating current generated by receiving radio waves via the antenna 114. The circuit 115 may be used as a rectifier circuit. Note that the circuit 115 does not necessarily have to be provided. The circuit 115 has a function of rectifying the alternating current generated by receiving radio waves via the antenna 114. The circuit 115 may be used as a rectifier circuit. Note that the circuit 115 does not necessarily have to be provided.

[0053] The circuit 116 has a function of smoothing the alternating current rectified by the circuit 115. The circuit 116 may be used as a regulator.

[0054] The transistor 150 is provided, for example, between the power storage body 111 and the circuit 141. One of the source and drain of the transistor 150 is connected to the circuit 116, and the other is connected to the other of the source and drain of the transistor 131. The transistor 150 has a function of controlling whether to charge the power storage body 111 with the power received by the circuit 141. In addition, the transistor 150 may be used as a switch. The transistor 150 is provided, for example, between the power storage body 111 and the circuit 141. One of the source and drain of the transistor 150 is connected to the circuit 116, and the other is connected to the other of the source and drain of the transistor 131. The transistor 150 has a function of controlling whether to charge the power storage body 111 with the power received by the circuit 141. In addition, the transistor 150 may be used as a switch. The transistor 150 is provided, for example, between the power storage body 111 and the circuit 141. One of the source and drain of the transistor 150 is connected to the circuit 116, and the other is connected to the other of the source and drain of the transistor 131. The transistor 150 has a function of controlling whether to charge the power storage body 111 with the power received by the circuit 141. In addition, the transistor 150 may be used as a switch. The transistor 150 is provided, for example, between the power storage body 111 and the circuit 141. One of the source and drain of the transistor 150 is connected to the circuit 116, and the other is connected to the other of the source and drain of the transistor 131. The transistor 150 has a function of controlling whether to charge the power storage body 111 with the power received by the circuit 141. In addition, the transistor 150 may be used as a switch. The transistor 150 is provided, for example, between the power storage body 111 and the circuit 141. One of the source and drain of the transistor 150 is connected to the circuit 116, and the other is connected to the other of the source and drain of the transistor 131. The transistor 150 has a function of controlling whether to charge the power storage body 111 with the power received by the circuit 141. In addition, the transistor 150 may be used as a switch.

[0055] The potential of the gate of the transistor 150 is controlled by, for example, the circuit 113. Note that the present invention is not limited to the configurations shown in FIGS. 2(A) and 2(B). For example, a plurality of transistors may be used. (A) and 2(B). For example, a plurality of transistors may be used. Instead of the transistor 150, a bipolar transistor, a diode, or a logic circuit combining these may be used. Instead of the transistor 150, a bipolar transistor, a diode, or a logic circuit combining these may be used.

[0056] The circuit 142 includes an antenna 118 and a circuit 119. The circuit 142 is a data signal It has the function of being able to transmit and receive. Note that circuit 142 may be used as a transceiver circuit. Or Circuit 142 may be used as a data communication circuit.

[0057] Note that antenna 118 may be used as an antenna circuit. At this time, the antenna circuit has an antenna and capacitance.

[0058] Note that instead of antenna 114 and antenna 118, one antenna may be connected to circuit 115 and circuit 119.

[0059] Circuit 119 has the function of being able to generate a data signal from the radio wave received via antenna 118. Circuit 119 may have functional circuits such as a rectifier circuit, a demodulation circuit, and a modulation circuit, for example. Or, functional circuits such as an analog baseband circuit and a digital baseband circuit may be provided in circuit 119. Or, circuit 119 may have an interface. Circuit 119 may be used as a signal generation circuit.

[0060] As the radio wave, a carrier wave may be used. A carrier wave is an AC signal also called a carrier, and the exchange of data signals is performed using the carrier wave. Note that the radio wave received from the outside also includes a modulated radio wave (modulated wave).

[0061] Circuit 119 has, for example, as shown in FIG. 3, circuit 191, interface 192, circuit 193, and circuit 194.

[0062] Circuit 191 has the function of demodulating the received radio wave and extracting data. Note that circuit 1 91 may be used as a demodulation circuit.

[0063] ​​​​Interface 192 has the function of controlling the input and output of signals between circuit 119 and circuit 113. Note that it is not always necessary to provide interface 192.

[0064] Circuit 193 has the function of modulating the signal input via interface 192. Note that circuit 193 may also be used as a modulation circuit.

[0065] Circuit 194 has the function of amplifying the voltage of the modulated signal and adjusting the signal. Note that circuit 194 may also be used as an amplification circuit.

[0066] Circuit 121 has the function of smoothing the voltage output from power storage element 111. Circuit 121 may also be used as a regulator. Note that it is not always necessary to provide circuit 121.

[0067] Transistor 170 is provided between load 143 and power storage element 111, for example, as shown in FIG. 2 (B), via transistors 131 and 132. One of the source and drain of transistor 17 0 is connected to the other of the source and drain of transistor 131. Transistor 170 has the function of controlling the supply (discharge) of power from power storage element 111 to the load. Note that transistor 170 may also be used as a switch.

[0068] The potential of the gate of transistor 170 is controlled by circuit 113. Note that it is not limited to the configurations shown in FIGS. 2(A) and 2(B), and for example, a plurality of transistors may be used.

[0069] Device 100 has the function of outputting power supply voltage V1 via terminals a and d. Terminal a may be given, for example, potential Va. Terminal d may be given, for example, potential Vd. Good. For example, the potential Va may be set to a potential higher than the potential Vd. The device 100 has a function of outputting the power supply voltage V2 via the terminal b and the terminal d. For example, a potential Vb may be applied to the terminal b . For example, the potential Vb may be set to a potential higher than the potential Vd.

[0070] A control signal for controlling, for example, the circuit 113 can be input to the terminal c. For example, the number of terminals c corresponding to the number of control signals is provided. As the control signal, for example, an I 2 C standard bus signal or the like can be used.

[0071] The above is a configuration example of the device 100 shown in FIGS. 2(A) and 2(B).

[0072] Next, a configuration example of the device 200 will be described with reference to FIGS. 4(A) and 4(B).

[0073] The circuit 211 has a function of being able to identify the input data 110. Further, the circuit 211 has a function of generating and outputting a signal based on the data 110. Note that the circuit 211 may be a signal processing circuit.

[0074] The circuit 211 includes, for example, a memory, a processor, and a controller. The memory may store, for example program data necessary for driving the processor. Examples of the program data include program data for causing the processor to adjust the amount of power according to the identification data and the like.

[0075] The circuit 230 includes an antenna 212, a circuit 213, a circuit 214, and a circuit 215. The circuit 230 has a function of generating a data signal from the radio wave received via the antenna 212 and ​It has capabilities. Note that circuit 230 may be used as a transceiver circuit. Or, circuit 230 may be used as a data communication circuit.

[0076] Note that antenna 212 may be used as an antenna circuit. At this time, the antenna circuit has an antenna and a capacitor.

[0077] Circuit 213 is connected to antenna 212. Circuit 213 has a function of demodulating radio waves received via antenna 212, for example, and extracting a data signal. The data of the extracted data signal includes, for example, data 110. Note that circuit 213 may be used as a demodulation circuit.

[0078] Circuit 214 is connected to circuit 211. Circuit 214 has a function of modulating a signal input from circuit 211, for example. Note that circuit 214 may be used as a modulation circuit.

[0079] As the modulation method, for example, an amplitude modulation method, a frequency modulation method, a phase modulation method, etc. may be used.

[0080] Circuit 215 has a function of amplifying a modulated data signal and adjusting the data signal, for example. Circuit 215 may be used as an amplifier circuit. Note that it is not always necessary to provide circuit 215.

[0081] Circuit 231 has circuit 221, circuit 222, and antenna 223. Circuit 231 may be used as a power supply circuit. Or circuit 231 may be used as a power transmission circuit. Note that as shown in FIG. 4(B), sensor 235 may be provided in device 200. Sensor 235 measures displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness ​​​​​​​​​​​temperature, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared rays It has a function capable of measuring. Thus, for example, using the sensor 235, the apparatus 10 can also determine the presence or absence of 0.

[0082] The circuit 221 has a function capable of oscillating an alternating current wave for supplying power, for example. The circuit 22 1 may be used as an oscillation circuit.

[0083] The circuit 222 has a function capable of amplifying and adjusting an alternating current wave, for example. The circuit 222 may be used as an amplification circuit Note that the circuit 222 does not necessarily have to be provided.

[0084] The alternating current wave is output as a radio wave via the antenna 223. Note that the antenna 223 may be used as an antenna circuit At this time, the antenna circuit has an antenna and a capacitor.

[0085] Power may be supplied to the apparatus 200 from, for example, a commercial power supply or the like.

[0086] Next, as an example of a driving method of the power storage system according to the present embodiment, an example of a driving method of the power storage system shown in FIG. 1(A) will be described with reference to the flowchart of FIG. 5. Note that the configuration of the apparatus 100 is assumed to be the configuration shown in FIG. 2(B), and the configuration of the apparatus 200 is assumed to be the configuration shown in FIG. 4(A).

[0087] In the example of the driving method of the power storage system shown in FIG. 1(A), as step S1, a confirmation signal is transmitted from the apparatus 200 to the apparatus 100 using a radio wave. For example, it is preferable to transmit the confirmation signal about once every few seconds

[0088] Next, as step S2, the apparatus 100 receives the confirmation signal.

[0089] ​​​​At this time, the circuit 119 included in the circuit 142 extracts a confirmation signal, and the confirmation signal is output to the circuit 113.

[0090] Next, as step S3, the apparatus 100 generates a response signal corresponding to the received confirmation signal and transmits it to the apparatus 200.

[0091] At this time, based on the data of the confirmation signal, the circuit 113 reads out necessary program data from the memory and causes the processor to execute to generate a response signal. The response signal also includes the data 110 for identifying the apparatus 100.

[0092] As a response method by signals between the apparatus 100 and the apparatus 200, for example, a method compliant with standards such as ISO15693, ISO14443, etc. can be used. Or, a method compliant with a standard such as NFC (Near Field Communication) can be used. Examples of the NFC standard include NFCIP-1 (ISO18092).

[0093] Note that the position of the apparatus 100 may be detected using the response signal. For example, by using the circuit 211 to determine the distance of the apparatus 100 from the response signal, the position of the apparatus 100 can be detected.

[0094] Furthermore, a radio wave including the response signal generated by the circuit 142 is transmitted to the apparatus 200.

[0095] Next, as step S4, the apparatus 200 receives the response signal and identifies the data 110 included in the received response signal.

[0096] For example, the circuit 230 extracts the response signal from the received radio wave and extracts the extracted response signal to the circuit 2 ​​​​​​​​​​Output to 11.

[0097] Circuit 211 identifies device 100 from the data 110 included in the input response signal. For example, data for identifying device 100 is stored in advance in a memory, and can be identified by comparing this data with data 110. Further, as step S5, it is determined whether charging of the power storage body 111 is necessary and possible. For the power storage body 111, determine whether charging is necessary and possible.

[0098] If it is determined that charging is unnecessary or impossible, the operation of circuit 231 is stopped. For example, using the controller of circuit 211, the supply of the power supply voltage to circuit 231 is stopped, and thus the operation of circuit 231 can be stopped.

[0099] If it is determined that charging is necessary and possible, as step S6, power transmission from device 200 to device 10 0 is started.

[0100] Note that even if it is determined that charging is necessary, the charge stored in the power storage body 111 is not zero, and it is preferable that charges necessary for the operation of device 100, such as the power for operating circuit 113, are stored in the power storage body 111.

[0101] At this time, the operation of circuit 231 is started, and by transmitting alternating current to device 100, power is supplied to device 1 00.

[0102] Note that according to the data for identifying device 100, for example, by changing the frequency or amplitude of the transmitted alternating current, the amount of power supplied to device 100 can be optimized. For example, the power supply time can be adjusted according to the capacity of the power storage body 111 of device 10 0. Further, the circuit By controlling the conversion efficiency of the amplified alternating current, the frequency of the transmitted alternating current or amplitude can be changed.

[0103] Next, as step S7, start the power reception of device 100 and start charging the power storage body 111. For example, device 100 can perform power reception using a method such as electromagnetic induction, electric field resonance, magnetic field resonance, or microwave method.

[0104] The power supplied from device 200 is adjusted by circuit 141. Further, circuit 113 turns on transistor 131, transistor 132, and transistor 150. As a result, the power storage body 111 is charged.

[0105] Next, as step S8, determine whether the voltage Vbt of the power storage body 111 has become equal to or higher than the reference voltage Vref due to charging. For example, circuit 113 can compare the voltage Vbt and the reference voltage Vref.

[0106] If it is determined that the voltage Vbt is less than the reference voltage Vref, continue charging the power storage body 111.

[0107] On the other hand, if it is determined that the voltage Vbt is equal to or higher than the reference voltage Vref, circuit 113 turns off transistor 150 and transmits an electric wave including a stop signal to device 200 via circuit 142 as step S9. Note that when it is determined that the voltage Vbt is equal to or higher than the reference voltage Vref, transistor 131 and transistor 132 may be turned off. Thereby, overcharging of the power storage body 111 can be prevented.

[0108] Note that even if the voltage Vbt is less than the reference voltage Vref, for example, if the user forcibly operates device 1 There may be a case where it is desired to end the charging of the power storage body 111 by disconnecting from 00. In that case, for example, the sensor 2 detects the position of the device 100 by 35, and when the value of the position data of the device 100 exceeds the threshold value the operation of the circuit 231 may be stopped by the circuit 211. Or, for example, while power is being supplied, if the device 200 sends a confirmation signal to the device 100 and there is no response signal from the device 100, the circuit 211 may stop the operation of the circuit 231.

[0109] Next, when the device 200 receives a radio wave having a stop signal as step S10, the circuit 21 extracts the stop signal at 3, and the circuit 213 outputs the extracted stop signal to the circuit 211.

[0110] When the stop signal is input, the circuit 211 stops the operation of the circuit 231. For example, by using the controller of the circuit 2 11 to stop the supply of the power supply voltage to the circuit 231, the operation of the circuit 231 can be stopped. In this way, by stopping the operation of the circuit 231 during the period when it is not necessary, the power consumption can be reduced.

[0111] Thereafter, if necessary, by turning on the transistor 131, the transistor 132, and the transistor 17 0, the power supply voltage V1 can be output via the terminals a and d, and power can be supplied from the power storage body 111 to the load. Or, by turning on the transistor 131, the transistor 13 2, and the transistor 170, the power supply voltage V2 can be output via the terminals b and d, and power can be supplied from the power storage body 111 to the load.

[0112] The above is the description of an example of the driving method of the power storage system.

[0113] As described with reference to FIGS. 1 to 5, in an example of the power storage system according to the present embodiment, by identifying the device 100 by the device 200 using identification data, charging can be performed under the most suitable conditions for each device 100. Therefore, for example, regardless of the specifications of the device 100, charging can be performed. In the conventional power storage device, for example, the specifications are individually set for each portable terminal, and when the specifications are different, it is necessary to prepare different power supply devices. For example, if connectors for connecting power supply cables are different, other power supply devices cannot be used. Therefore, when having a plurality of portable terminals with different specifications, the user needs several power supply devices, which is inconvenient. In the present embodiment, for example, since it is not necessary to change the device 200 according to the specifications of the device 100, the versatility can be increased. By identifying the device 100 by the device 200 using identification data, charging can be performed under the most suitable conditions for each device 100. Therefore, for example, regardless of the specifications of the device 100, charging can be performed. In the conventional power storage device, for example, the specifications are individually set for each portable terminal, and when the specifications are different, it is necessary to prepare different power supply devices. For example, if connectors for connecting power supply cables are different, other power supply devices cannot be used. Therefore, when having a plurality of portable terminals with different specifications, the user needs several power supply devices, which is inconvenient. In the present embodiment, for example, since it is not necessary to change the device 200 according to the specifications of the device 100, the versatility can be increased. In the conventional power storage device, for example, the specifications are individually set for each portable terminal, and when the specifications are different, it is necessary to prepare different power supply devices. For example, if connectors for connecting power supply cables are different, other power supply devices cannot be used. Therefore, when having a plurality of portable terminals with different specifications, the user needs several power supply devices, which is inconvenient. In the present embodiment, for example, since it is not necessary to change the device 200 according to the specifications of the device 100, the versatility can be increased. In the conventional power storage device, for example, the specifications are individually set for each portable terminal, and when the specifications are different, it is necessary to prepare different power supply devices. For example, if connectors for connecting power supply cables are different, other power supply devices cannot be used. Therefore, when having a plurality of portable terminals with different specifications, the user needs several power supply devices, which is inconvenient. In the present embodiment, for example, since it is not necessary to change the device 200 according to the specifications of the device 100, the versatility can be increased. In the conventional power storage device, for example, the specifications are individually set for each portable terminal, and when the specifications are different, it is necessary to prepare different power supply devices. For example, if connectors for connecting power supply cables are different, other power supply devices cannot be used.

[0114] Although an example of identifying the device 100 by the device 200 using identification data has been shown, one aspect of the embodiment of the present invention is not limited to this. In some cases, or depending on the situation, it may not be necessary to use identification data. Or, in some cases, or depending on the situation, it may not be necessary to identify the device 100 by the device 200. Although an example of identifying the device 100 by the device 200 using identification data has been shown, one aspect of the embodiment of the present invention is not limited to this. In some cases, or depending on the situation, it may not be necessary to use identification data. Or, in some cases, or depending on the situation, it may not be necessary to identify the device 100 by the device 200. Although an example of identifying the device 100 by the device 200 using identification data has been shown, one aspect of the embodiment of the present invention is not limited to this. In some cases, or depending on the situation, it may not be necessary to use identification data. Or, in some cases, or depending on the situation, it may not be necessary to identify the device 100 by the device 200. Although an example of identifying the device 100 by the device 200 using identification data has been shown, one aspect of the embodiment of the present invention is not limited to this. In some cases, or depending on the situation, it may not be necessary to use identification data. Or, in some cases, or depending on the situation, it may not be necessary to identify the device 100 by the device 200.

[0115] (Embodiment 2) In the present embodiment, a configuration example of the circuit 113 will be described with reference to FIG. 6.

[0116] The circuit 113 includes a processor 710, a bus bridge 711, a RAM (Random Access Memory) 712, a memory interface 713, a controller 720, an interrupt controller 721, an I / O interface (input / output interface) 722, and a power gate unit 730. an interrupt controller 721, an I / O interface (input / output interface) 722, and a power gate unit 730. an interrupt controller 721, an I / O interface (input / output interface) 722, and a power gate unit 730.

[0117] Furthermore, circuit 113 includes a crystal oscillator circuit 741, a timer circuit 745, an I / O interface 746, an I / O port 750, a comparator 751, an I / O interface 752 , bus lines 761, 762, 763, and a data bus line 76 4. Furthermore, circuit 113 has at least connection terminals 77 0 to 776 as connection parts to external devices. Each of the connection terminals 770 to 776 represents a terminal group consisting of one terminal or a plurality of terminals. An oscillator 742 having a crystal resonator 743 is connected to circuit 113 via connection terminals 772 and 773.

[0118] The processor 710 has a register 785 and is connected to bus lines 76 1 to 763 and the data bus line 764 via a bus bridge 711.

[0119] The memory 712 is a storage device that can function as the main memory of the processor 710 , and for example, a random access memory is used. The memory 712 stores instructions executed by the processor 71 0, data necessary for the execution of the instructions, and data produced by the processing of the processor 710. Data is written to and read from the memory 712 according to the instructions of the processor 710. Note that the data 110 shown in FIG. 1 may be stored in the memory 712.

[0120] In circuit 113, power supply to the memory 712 is cut off in the low power consumption mode. Therefore, the memory 712 is preferably composed of a memory that can hold data even when no power is supplied.

[0121] The memory interface 713 is an input / output interface with an external storage device. Under the instruction of the processor 710, data is written to and read from an external storage device connected to the connection terminal 776 via the memory interface 713.

[0122] The clock generation circuit 715 is a circuit that generates a clock signal MCLK (hereinafter also simply referred to as "MCLK") used by the processor 710 and has an RC oscillator or the like. MCLK is also output to the controller 720 and the interrupt controller 721.

[0123] The controller 720 is a circuit that performs control processing for the entire circuit 113. For example, it can control a bus and a memory map, perform power control of the circuit 113, and control the clock generation circuit 715 and the crystal oscillation circuit 741.

[0124] The connection terminal 770 is a terminal for inputting an external interrupt signal. An unmaskable interrupt signal NMI is input to the controller 720 via the connection terminal 770. When an unmaskable interrupt signal NMI is input to the controller 72 0, the controller 720 immediately outputs the unmaskable interrupt signal NMI to the processor 710 and causes the processor 710 to execute interrupt processing.

[0125] In addition, an interrupt signal INT is input to the interrupt controller 721 via the connection terminal 770. Interrupt signals (T0IRQ , P0IRQ, C0IRQ) from peripheral circuits are also input to the interrupt controller 721 without passing through the bus (761 to 764).

[0126] ​​​​​The interrupt controller 721 has a function of assigning priorities to interrupt requests. When the interrupt controller 721 detects an interrupt signal, it determines whether the interrupt request is valid. If it is a valid interrupt request, it outputs an interrupt signal INT to the controller 720.

[0127] Also, the interrupt controller 721 is connected to the bus line 761 and the data bus line 764 via the I / O interface 722.

[0128] When the interrupt signal INT is input, the controller 720 outputs the interrupt signal INT to the processor 710 and causes the processor 710 to execute an interrupt process.

[0129] Also, the interrupt signal T0IRQ may be directly input to the controller 720 without passing through the interrupt controller 721. When the interrupt signal T0IRQ is input, the controller 720 outputs a non-maskable interrupt signal NMI to the processor 710 and causes the processor 710 to execute an interrupt process.

[0130] Thus, for example, a sensor may be provided in the device 100 to detect a change in the voltage of the power storage body 111 or a change in the distance between the device 100 and the device 200, and an interrupt process may be executed according to the detection result.

[0131] The register 780 of the controller 720 is provided inside the controller 720, and the register 786 of the interrupt controller 721 is provided in the I / O interface 722. .

[0132] Next, the peripheral circuits included in circuit 113 will be described. Circuit 113 includes, as peripheral circuits, a timer circuit 745, an I / O port 750, and a comparator 751. These peripheral circuits are an example, and necessary circuits can be provided according to the electrical equipment in which circuit 113 is used.

[0133] Timer circuit 745 has a function of measuring time using a clock signal TCLK ( hereinafter also simply referred to as "TCLK") output from clock generation circuit 740. Also, clock generation circuit 715 outputs an interrupt signal T0IRQ to controller 720 and interrupt controller 721 at determined time intervals. Timer circuit 745 is connected to bus line 761 and data bus line 764 via an I / O interface 746.

[0134] TCLK is a clock signal having a frequency lower than that of MCLK. For example, if the frequency of MCLK is on the order of several MHz (e.g., 8 MHz), TCLK is on the order of several tens of kHz (e.g., 32 kHz). Clock generation circuit 740 includes a crystal oscillation circuit 741 built in circuit 113 and an oscillator 742 connected to connection terminals 772 and 773. A crystal oscillator 743 is used as the oscillator of oscillator 742. Note that by configuring clock generation circuit 740 with a CR oscillator or the like, all modules of clock generation circuit 740 can be built in circuit 113.

[0135] I / O port 750 is an interface for inputting and outputting information with an external device connected via connection terminal 774, and is a digital signal input / output interface. For example, ​​​​​​​​​​If so, the I / O port 750 is connected to the circuit 119 via the connection terminal 774, and is connected to the transistor 131 via the connection terminal 7 74, connected to the transistor 13 2 via the connection terminal 774, connected to the transistor 150 via the connection terminal 774, and the connection terminal 774 is connected to the transistor 170 via the connection terminal 774, and is connected to the power storage element 111 via the connection terminal 774 For example, the I / O port 750 outputs an interrupt signal P0IRQ to the interrupt controller 721 according to the input digital signal. Note that a plurality of connection terminals 774 are provided and are connected to the transistor 150 via the circuit 119, the transistor 131, the transistor 132, and the connection terminal 774, and are connected to the transistor 170 via the connection terminal 774, and are connected to the power storage element 111 via the connection terminal 774 and are connected to the transistor 170 via the connection terminal 774, and are connected to the power storage element 111 via the connection terminal 774 The comparator 751 can compare, for example, the potential (or

[0136] current) of the analog signal input from the connection terminal 775 with the potential (or current) of the reference signal, and can generate a digital signal with a value of 0 or 1. Further, when the value of this digital signal is 1, the comparator 751 can generate an interrupt signal C0IRQ. The interrupt signal C0IRQ is output to the interrupt controller 7 21. Further, the comparator 751 can compare, for example, a signal indicating the voltage Vbt of the power storage element 111 input via the connection terminal 774 with a signal indicating the reference voltage Vref and can also perform the comparison. The I / O port 750 and the comparator 751 are connected to the bus line 761 and the data bus line 764 via a common I / O interface 752. Here, there is a circuit that can be shared by the I / O interfaces of each of the I / O port 750 and the comparator 751

[0137] ​​​​ Therefore, it is configured with one I / O interface 752, but the I / O ports 750, The I / O interfaces of the comparator 751 can also be provided separately.

[0138] Also, the registers of the peripheral circuits are provided in the corresponding input / output interfaces. The register 787 of the timer circuit 745 is provided in the I / O interface 746, and the registers 783 of the I / O port 750 and the register 784 of the comparator 751 are provided in the I / O interface 752, respectively. The register 787 of the timer circuit 745 is provided in the I / O interface 746, and the registers 783 of the I / O port 750 and the register 784 of the comparator 751 are provided in the I / O interface 752, respectively. The register 783 of the I / O port 750 and the register 784 of the comparator 751 are provided in the I / O interface 752, respectively. / O interface 752.

[0139] The circuit 113 has a power gate unit 730 for cutting off the power supply to the internal circuit. By supplying power only to the circuits necessary for operation by the power gate unit 730, the power consumption of the entire circuit 113 can be reduced. By supplying power only to the circuits necessary for operation by the power gate unit 730, the power consumption of the entire circuit 113 can be reduced. The power consumption of the entire circuit 113 can be reduced.

[0140] As shown in FIG. 6, the circuits of the units 701, 702, 703, and 704 surrounded by the broken line in the circuit 113 are connected to the connection terminal 771 via the power gate unit 730. The connection terminal 771 is connected to, for example, the power storage body 111. The connection terminal 771 is connected to, for example, the power storage body 111. The circuits of the units 701, 702, 703, and 704 surrounded by the broken line in the circuit 113 are connected to the connection terminal 771 via the power gate unit 730.

[0141] In this embodiment, the unit 701 includes the timer circuit 745 and the I / O interface 746, the unit 702 includes the I / O port 750, the comparator 751, and the I / O interface 752, the unit 703 includes the interrupt controller 721 and the I / O interface 722, and the unit 704 includes the processor 710, the memory 712, the bus bridge 711, and the memory interface 713. In this embodiment, the unit 701 includes the timer circuit 745 and the I / O interface 746, the unit 702 includes the I / O port 750, the comparator 751, and the I / O interface 752, the unit 703 includes the interrupt controller 721 and the I / O interface 722, and the unit 704 includes the processor 710, the memory 712, the bus bridge 711, and the memory interface 713. The unit 702 includes the I / O port 750, the comparator 751, and the I / O interface 752, the unit 703 includes the interrupt controller 721 and the I / O interface 722, and the unit 704 includes the processor 710, the memory 712, the bus bridge 711, and the memory interface 713. The unit 703 includes the interrupt controller 721 and the I / O interface 722, and the unit 704 includes the processor 710, the memory 712, the bus bridge 711, and the memory interface 713. The unit 704 includes the processor 710, the memory 712, the bus bridge 711, and the memory interface 713.

[0142] The power gate unit 730 is controlled by the controller 720. The power gate uni t 730 has switches 731 and 732 for cutting off the supply of the power voltage to units 701 to 704. As the power voltage at this time, for example, the voltage of the power storage body 11 1 or the like can be used.

[0143] The on / off states of switches 731 and 732 are controlled by the controller 720. Specifically, the controller 720 outputs a signal for turning off some or all of the switches of the power gate unit 7 30 according to the request of the processor 710 (stopping the power supply). Further, the controller 720 outputs a signal for turning on the switches of the power gate unit 7 30 by triggering a non-maskable interrupt signal NMI or an interrupt signal T0IRQ from the timer circuit 745 (starting the power supply).

[0144] In FIG. 6, the power gate unit 730 is shown to be configured with two switches (switches 731 and s witches 732), but the present invention is not limited to this, and the number of switches necessary for power cut-off may be provided.

[0145] Also, in the present embodiment, the switch 731 is provided so that the power supply to the unit 701 can be independently controlled, and the switch 732 is provided so that the power supply to the units 702 to 704 can be independently controlled. However, the present invention is not limited to such a power supply path. For example, a switch different from the switch 732 may be provided so that the power supply to the memory 712 can be independently controlled. Also, a plurality of switches may be provided for one circuit.

[0146] Also, the controller 720 is constantly supplied with the power voltage from the connection terminal 771 without going through the power gate unit 730. Also, in order to reduce the influence of noise, the oscillation circuit of the clock generation circuit 715 and the crystal oscillation circuit 741 are each supplied with a power potential from an external power supply circuit different from the power supply circuit of the power voltage.

[0147] By providing the controller 720, the power gate unit 730, etc., the circuit 11 3 can be operated in three types of operation modes. The first operation mode is the normal operation mode, in which all circuits of the circuit 113 are in an active state. Here, the first operation mode is called the "Active mode".

[0148] In the first operation mode, for example, generation of a response signal based on a confirmation signal from the device 200 shown in the first embodiment is performed.

[0149] The second and third operation modes are low power consumption modes, in which some circuits are made active. In the second operation mode, the controller 720, the timer circuit 745 and its related circuits (crystal oscillation circuit 741, I / O interface 746) are active. In the third operation mode, only the controller 720 is active. Here, the second operation mode is called the "Noff1 mode", and the third operation mode is called the "Noff2 mode". In the Noff1 mode, the controller 720 and a part of the peripheral circuits ( circuits necessary for timer operation) operate, and in the Noff2 mode, only the controller 720 is operating.

[0150] Note that the oscillator of the clock generation circuit 715 and the crystal oscillator circuit 741 are not related to the operation mode, and power is always supplied. To deactivate the clock generation circuit 715 and the crystal oscillator circuit 741, an enable signal is input from the controller 720 or externally, and the oscillation of the clock generation circuit 715 and the crystal oscillator circuit 741 is stopped. Also, in the Noff1 and Noff2 modes, since the power supply is cut off by the power gate unit 730, the I / O port 750 and the I / O interface 752 become non-Active. However, in order to operate the external device connected to the connection terminal 774 normally, power is supplied to a part of the I / O port 750 and the I / O interface 752. Specifically, it is the output buffer of the I / O port 750 and the register 783 for the I / O port 750. In the Noff1 and Noff2 modes, the data transmission function between the I / O interface 752 and the external device and the interrupt signal generation function, which are the substantial functions of the I / O port 750, are stopped. Also, similarly for the I / O interface 752, the communication function is stopped.

[0151] In addition, in the Noff1 and Noff2 modes, since the power supply is cut off by the power gate unit 730, the I / O port 750 and the I / O interface 752 become non-Active. However, in order to operate the external device connected to the connection terminal 774 normally, power is supplied to a part of the I / O port 750 and the I / O interface 752. Specifically, it is the output buffer of the I / O port 750 and the register 783 for the I / O port 750. In the Noff1 and Noff2 modes, the data transmission function between the I / O interface 752 and the external device and the interrupt signal generation function, which are the substantial functions of the I / O port 750, are stopped. Also, similarly for the I / O interface 752, the communication function is stopped. Note that in this specification, a circuit being non-active includes not only the state where the power supply is cut off and the circuit has stopped, but also the state where the main functions in the Active mode (normal operation mode) have stopped, or the state where the circuit is operating with lower power consumption than the Active mode. With the above configuration, for example, when the user forcibly terminates the charging operation of the device 100, the switch of the power gate unit 730 is controlled according to the request of the processor 710. Note that in this specification, a circuit being non-active includes not only the state where the power supply is cut off and the circuit has stopped, but also the state where the main functions in the Active mode (normal operation mode) have stopped, or the state where the circuit is operating with lower power consumption than the Active mode. With the above configuration, for example, when the user forcibly terminates the charging operation of the device 100, the switch of the power gate unit 730 is controlled according to the request of the processor 710. Note that in this specification, a circuit being non-active includes not only the state where the power supply is cut off and the circuit has stopped, but also the state where the main functions in the Active mode (normal operation mode) have stopped, or the state where the circuit is operating with lower power consumption than the Active mode.

[0152] Note that in this specification, a circuit being non-active includes not only the state where the power supply is cut off and the circuit has stopped, but also the state where the main functions in the Active mode (normal operation mode) have stopped, or the state where the circuit is operating with lower power consumption than the Active mode. With the above configuration, for example, when the user forcibly terminates the charging operation of the device 100, the switch of the power gate unit 730 is controlled according to the request of the processor 710. Note that in this specification, a circuit being non-active includes not only the state where the power supply is cut off and the circuit has stopped, but also the state where the main functions in the Active mode (normal operation mode) have stopped, or the state where the circuit is operating with lower power consumption than the Active mode.

[0153] With the above configuration, for example, when the user forcibly terminates the charging operation of the device 100, the switch of the power gate unit 730 is controlled according to the request of the processor 710. Note that in this specification, a circuit being non-active includes not only the state where the power supply is cut off and the circuit has stopped, but also the state where the main functions in the Active mode (normal operation mode) have stopped, or the state where the circuit is operating with lower power consumption than the Active mode. ​​​Outputs a signal to turn off some or all of it, and switches to the Noff1 and Noff2 modes, and can also stop supplying power to unnecessary circuit blocks. It can also stop supplying power to unnecessary circuit blocks.

[0154] Furthermore, a configuration example of a register applicable to each circuit block will be described with reference to FIG. 7. 。

[0155] The register shown in FIG. 7(A) includes a memory circuit 651, a memory circuit 652, and a selector 653. , and has.

[0156] A reset signal RST, a clock signal CLK, and a data signal D are input to the memory circuit 651. The memory circuit 651 has a function of holding the data of the data signal D input according to the clock signal CLK and outputting it as a data signal Q. As the memory circuit 651, for example, a register such as a buffer register or a general-purpose register can be configured. Or, As the memory circuit 651, a cache memory composed of, for example, SRAM (Static Random Access Memory) can also be provided. These registers and cache memories can store data in the memory circuit 652. For example, a register such as a buffer register or a general-purpose register can be configured. Or, As the memory circuit 651, a cache memory composed of SRAM (Static Random Access Memory) can also be provided. These registers and cache memories can store data in the memory circuit 652. These registers and cache memories can store data in the memory circuit 652.

[0157] A write control signal WE, a read control signal RD, and a data signal are input to the memory circuit 652. The write control signal WE, the read control signal RD, etc. may be input via, for example, terminal c. The write control signal WE, the read control signal RD, etc. may be input via, for example, terminal c.

[0158] The memory circuit 652 has a function of storing the data of the input data signal according to the write control signal WE and outputting the stored data as a data signal according to the read control signal RD. The memory circuit 652 has a function of storing the data of the input data signal according to the write control signal WE and outputting the stored data as a data signal according to the read control signal RD. function.

[0159] Selector 653 selects the data signal D or the data signal output from the memory circuit 652 according to the read control signal RD and inputs it to the memory circuit 651.

[0160] The memory circuit 652 is provided with a transistor 631 and a capacitor element 632.

[0161] The transistor 631 is an n-channel transistor and has a function as a selection transistor. One of the source and drain of the transistor 631 is connected to the output terminal of the memory circuit 651. Further, the back gate of the transistor 631 is supplied with a power supply potential. The transistor 631 has a function of controlling the holding of the data signal output from the memory circuit 651 according to the write control signal WE.

[0162] As the transistor 631, for example, a transistor with a low off-current may be applied. As the transistor with a low off-current, for example, a transistor having a channel formation region containing an oxide semiconductor having a wider bandgap than silicon and the channel formation region being substantially i-type can be applied.

[0163] For example, by removing impurities such as hydrogen or water as much as possible and supplying oxygen to reduce oxygen vacancies as much as possible, the transistor including the above oxide semiconductor can be manufactured. At this time, in the channel formation region, the amount of hydrogen, which is called a donor impurity in the measurement value of secondary ion mass spectrometry (SIMS), is reduced to 1×10 19 / cm 3 or less, preferably 1×10 18 / cm 3 or less. is preferred. The off-current of the transistor 631 is 1×1 per 1 μm channel width at 25°C 0 -19 A (100 zA) or less. More preferably 1×10 -22 A (100 yA) or less. The lower the off-current of the transistor, the better, but the lower limit of the off-current of the transistor is estimated to be about 1×10 A / μm. -30

[0164] As the above-mentioned oxide semiconductor, for example, In-based metal oxide, Zn-based metal oxide, In-Zn-based metal oxide, or In-Ga-Zn-based metal oxide can be applied.

[0165] One of the pair of electrodes of the capacitor element 632 is connected to the other of the source and drain of the transistor 631, and the power supply potential VSS is supplied to the other. The capacitor element 632 has a function of holding charges based on the data of the data to be stored. Since the off-current of the transistor 631 is extremely low, the charges of the capacitor element 632 are held even when the supply of the power supply voltage is stopped, and the data is held.

[0166] The transistor 633 is a p-channel transistor. The power supply potential VDD is supplied to one of the source and drain of the transistor 633, and the read control signal RD is input to the gate.

[0167] The transistor 634 is an n-channel transistor. One of the source and drain of the transistor 634 is connected to the other of the source and drain of the transistor 633, and the read control signal RD is input to the gate.

[0168] ​​​​​​Transistor 635 is an n-channel transistor. One of the source and drain of transistor 635 is connected to the other of the source and drain of transistor 634, and the other of the source and drain is supplied with the power supply potential VSS.

[0169] The input terminal of inverter 636 is connected to the other of the source and drain of transistor 633. Also, the output terminal of inverter 636 is connected to the input terminal of selector 653.

[0170] One of the pair of electrodes of capacitor element 637 is connected to the input terminal of inverter 636, and the other is supplied with the power supply potential VSS. Capacitor element 637 has a function of holding electric charges based on the data of the data signal input to inverter 636.

[0171] Note that the present invention is not limited to the above. For example, a phase change memory (also referred to as PRAM (Phase-change RAM) or PCM (Phase Change Memory)), a resistance change type memory (also referred to as ReRAM (Resistance RAM)), a magnetoresistive memory (also referred to as MRAM (Magnetoresistive RAM)), etc. may be used to configure the storage circuit 652. For example, as the MRAM, an MRAM using a magnetic tunnel junction element (also referred to as an MT J (Magnetic Tunnel Junction) element) can be applied.

[0172] Next, an example of a method for driving a register shown in Fig. 7(A) will be described.

[0173] First, during the normal operation period, the power supply voltage that becomes power, the reset signal RST, the clock signal ​​​​CLK is in the state supplied to the register. At this time, the selector 653 outputs the data of the data signal D to the storage circuit 651. The storage circuit 651 holds the data of the input data signal D according to the clock signal CLK . At this time, the transistor 633 is turned on by the read control signal RD, and the transistor 634 is turned off.

[0174] Next, in the backup period immediately before stopping the power supply voltage, according to the pulse of the write control signal WE, the transistor 631 is turned on, and the data of the data signal D is stored in the storage circuit 652, and the transistor 631 is turned off. Then, the supply of the clock signal CLK to the register is stopped, and further, the supply of the reset signal RST to the register is stopped. When the transistor 631 is in the on state, a positive power supply potential may be supplied to the back gate of the transistor 631. At this time, the transistor 633 is turned on by the read control signal RD, and the transistor 634 is turned off.

[0175] Next, in the power supply stop period, the supply of the power supply voltage to the register is stopped. At this time, since the off-current of the transistor 631 of the storage circuit 652 is low, the stored data is retained. Note that by supplying the ground potential GND instead of the power supply potential VDD, it can be regarded as stopping the supply of the power supply voltage. For example, the ground potential is supplied via the terminal d shown in FIG. 2(A). When the transistor 631 is in the off state, a negative power supply potential may be supplied to the back gate of the transistor 631 to maintain the off state of the transistor 631.

[0176] ​​​​​​​​​​​​​Next, in the recovery period immediately before returning to the normal operation period, the power supply voltage to the register is resumed, then the supply of the clock signal CLK is resumed, and then the supply of the reset signal RST is resumed. At this time, the wiring to which the clock signal CLK is supplied is set to the power supply voltage VDD, and then the supply of the clock signal CLK is resumed. Further, according to the pulse of the read control signal RD, the transistor 633 is turned off, the transistor 63 4 is turned on, and the data signal of the value stored in the memory circuit 652 is output to the selector 653. The selector 653 outputs the above data signal to the memory circuit 651 according to the pulse of the read control signal RD. Thereby, the memory circuit 651 can be restored to the state immediately before the power-off period.

[0177] Thereafter, in the normal operation period, the normal operation of the memory circuit 651 is performed again.

[0178] The above is an example of the driving method of the register shown in FIG. 7(A).

[0179] Note that the register is not limited to the configuration shown in FIG. 7(A).

[0180] For example, the register shown in FIG. 7(B) has no transistors 633, 634, inverter 636, and capacitive element 637 compared to the configuration of the register shown in FIG. 7(A), and has a selector 654. For the same parts as those of the register shown in FIG. 7(A), the description of the register shown in FIG. 7 (A) is appropriately incorporated. (A) is appropriately incorporated.

[0181] At this time, one of the source and drain of the transistor 635 is connected to the input terminal element of the selector 653.

[0182] ​Further, selector 654 selects the power supply potential VS that becomes data or the data signal output from the memory circuit 651 according to the write control signal WE2 and inputs it to the memory circuit 652. .

[0183] Next, an example of a register driving method shown in FIG. 7(B) will be described.

[0184] First, during the normal operation period, the power supply voltage, the reset signal RST, and the clock signal CLK are supplied to the register. At this time, selector 653 outputs the data of the data signal D to the memory circuit 651. The memory circuit 651 holds the data of the input data signal D according to the clock signal CLK. Further, according to the write control signal WE2, selector 654 outputs the power supply potential VSS to the memory circuit 652. In the memory circuit 652, transistor 631 is turned on according to the pulse of the write control signal WE, and the power supply potential VSS is stored as data in the memory circuit 652.

[0185] Next, during the backup period immediately before stopping the power supply voltage, according to the write control signal WE2, selector 654 causes one of the output terminal of the memory circuit 651 and the source and drain of transistor 631 to be in a conductive state instead of supplying the power supply potential VSS. Further, transistor 631 is turned on according to the pulse of the write control signal WE, and the data of the data signal D is stored in the memory circuit 652, and transistor 631 is turned off. At this time, the data in the memory circuit 652 is rewritten only when the potential of the data signal D is the same value as the power supply potential VDD. Further, the supply of the clock signal CLK to the register is stopped, and the supply of the reset signal RST to the register is stopped. Note that when transistor 631 is in the on state ​​​​​​​​​​​​​​ A positive power supply potential may be supplied to the back gate of the transistor 631 .

[0186] Next, during the power supply stop period, the supply of the power supply voltage to the register is stopped. In the memory circuit 652, the off-state current of the transistor 631 is low, so that the data value is maintained. By supplying the ground potential GND instead of the power supply potential VDD, It can also be considered that the voltage supply is stopped. When the transistor 631 is in an off state, a negative power supply potential is supplied to the back gate of the transistor 631. The transistor may be kept in an off state by using a resistor.

[0187] Next, during the recovery period just before returning to the normal operation period, Then, the supply of the clock signal CLK is resumed, and then the supply of the reset signal CLK is resumed. The supply of RST is resumed. At this time, the wiring through which the clock signal CLK is supplied is set to the power supply potential. The selector 653 is set to VDD and then the supply of the clock signal CLK is resumed. A value according to the data stored in the memory circuit 652 is read in response to a pulse of the read control signal RD. The data signal is output to the memory circuit 651. This causes the state immediately before the power supply interruption period to be stored. The circuit 651 can be restored.

[0188] After that, during the normal operation period, the memory circuit 651 performs normal operation again.

[0189] The above is an example of the method for driving the register shown in FIG.

[0190] By using the configuration shown in FIG. 7B, the power supply potential VSS during the backup period Since it is possible to eliminate the writing of data, the operation can be speeded up.

[0191] When the above register is used as registers 784 to 787, when shifting from the Active mode to the Nof f1, Noff2 modes, prior to power-off, the data in the storage circuits 651 of registers 784 to 78 7 is written into the storage circuit 652, and the data in the storage circuit 651 is reset to the initial value, and the power is turned off.

[0192] Also, when returning from the Noff1 or Noff2 mode to Active, when the power supply to registers 7 84 to 787 is resumed, first, the data in the storage circuit 651 is reset to the initial value. Then, the data in the storage circuit 652 is written into the storage circuit 651.

[0193] Therefore, even in the low power consumption mode, the data necessary for the processing of circuit 113 is held in registers 784 to 787, so that circuit 113 can be immediately returned from the low power consumption mode to the Active mode. Therefore, the power consumption of apparatus 100 can be reduced. It can be done.

[0194] (Embodiment 3) In this embodiment, an example of the memory 712 shown in FIG. 6 will be described as an example of the memory device.

[0195] A configuration example of the memory device according to this embodiment will be described.

[0196] An example of the memory cell array will be described with reference to FIG. 8.

[0197] The memory cell array shown in FIG. 8 includes a plurality of memory cells (storage circuits) 4 00 arranged in I rows and J columns, wirings BL_1 to BL_J, wirings WL_1 to WL_I, and wirings CL_1 to It has CL_I and a wiring SL to which a potential of a predetermined value is supplied.

[0198] In the memory cell array shown in FIG. 8, a memory cell 400 (memory cell 400 (M, N)) at the M-th row (where M is a natural number of 1 or more and I or less) and N-th column (where N is a natural number of 1 or more and J or less) includes a transistor 411 (M, N), a transistor 412 (M, N), and a capacitor element 413 (M, N ).

[0199] Also, one of the source and drain of the transistor 411 (M, N) is connected to the wiring BL_N. Furthermore, the gate of the transistor 411 (M, N) is connected to the wiring WL_M. Note that the potential of the back gate of the transistor 411 ( M, N) may be held for a certain period by a circuit using a diode and a capacitor.

[0200] And the transistor 411 (M, N) is an n-channel transistor and is a selection transistor that controls writing and holding of data.

[0201] Also, as the transistor 411 (M, N), a transistor with a low off-current can be used.

[0202] The transistor 412 is a p-channel transistor. One of the source and drain of the transistor 412 (M, N ) is connected to the wiring BL_N, and the other of the source and drain is connected to the wiring SL. Also, the gate of the transistor 412 (M, N) is connected to the other of the source and drain of the transistor 411 (M, N).

[0203] The transistor 412 (M, N) is an output transistor that sets the potential of the data to be output. It has the following functions.

[0204] One of the pair of electrodes of the capacitance element 413(M,N) is connected to the other of the source and drain of the transistor 411(M,N), and the other is connected to the wiring CL_M. The other of the pair of electrodes of the capacitance element 413(M,N) is connected to the other of the source and drain of the transistor 411(M,N), and the other is connected to the wiring CL_M.

[0205] The capacitance element 413(M,N) functions as a holding capacitance for holding data.

[0206] The above is the description of the configuration example of the memory cell array shown in FIG. 8.

[0207] Next, an example of the driving method of the memory having the memory cell array of FIG. 8 will be described. Here, as an example, the case where data is sequentially written into the memory cells 400 in the M-th row and then the written data is read out will be described, but it is not limited thereto.

[0208] First, when writing data into the memory cells 400 in the M-th row, the potential of the wiring WL_M is set to VH and the potentials of all other wirings WL_other are set to VL.

[0209] Note that VH is a potential (e.g., power supply potential VDD) greater than the reference potential (e.g., power supply potential VSS), and VL is a potential equal to or lower than the reference potential. and VL is a potential equal to or lower than the reference potential.

[0210] At this time, in each of the memory cells 400 in the M-th row, the transistor 411 is turned on and the potential of one of the pair of electrodes of the capacitance element 413 becomes equal to the potential of each wiring BL. becomes equal to the potential of each wiring BL.

[0211] Thereafter, the transistor 411 is turned off, the gate of the transistor 412 becomes floating and the potential of the gate of the transistor 412 is held.

[0212] By performing the above operation every time, data can be written to all memory cells 400. It is possible.

[0213] Also, when reading data from the memory cells 400 in the M-th row, the potential of all the wiring WLs is set to VL, the wiring CL_M is set to VL, and the potential of all the other wiring CL_others is set to VH. to do. to do.

[0214] Note that in the memory cell 400 in the M-th row, the resistance value between the source and the drain of the transistor 412 is determined according to the voltage of the gate of the transistor 412. Also, a potential of a value corresponding to the current flowing between the source and the drain of the transistor 412 can be read as data from the memory cell 400. of the transistor 412 is determined according to the voltage of the gate of the transistor 412. Also, a potential of a value corresponding to the current flowing between the source and the drain of the transistor 412 can be read as data from the memory cell 400. 12 can be read as data from the memory cell 400. 00.

[0215] Furthermore, by repeating the above operation every time, data can be read from all the memory cells 400. The above is the description of an example of the driving method of the memory. This is the end of the description of the example of the driving method of the memory.

[0216] (Embodiment 4) In this embodiment, a structural example of the circuit included in the apparatus 100 will be described with reference to FIG. 9. Examples of the circuit include, for example, circuit 113, circuit 115, circuit 116, circuit 119, circuit 121, and the like. Examples of the circuit include, for example, circuit 113, circuit 115, circuit 116, circuit 119, circuit 121, and the like. and the like.

[0217] The apparatus 100 shown in FIG. 9(A) has a structure in which a transistor 801 including silicon in a channel formation region and a transistor 802 including an oxide semiconductor in a channel formation region are stacked, and a plurality of wiring layers are further stacked on the transistor 802. and a transistor 802 including an oxide semiconductor in a channel formation region are stacked, and a plurality of wiring layers are further stacked on the transistor 802. It is a structure in which a plurality of wiring layers are stacked on the transistor 802.

[0218] The transistor 801 is provided on a semiconductor substrate having a buried insulating layer.

[0219] Transistor 802 includes a conductive layer 811a embedded in an insulating layer, and on the conductive layer 811a an insulating layer 814 provided, an oxide semiconductor layer 813 that overlaps the conductive layer 811a with the insulating layer 814 interposed therebetween, conductive layers 815a and 815b connected to the oxide semiconductor layer 813, an insulating layer 816 provided on the oxide semiconductor layer 813, the conductive layers 815a and 815b, and a conductive layer 818 that overlaps the oxide semiconductor layer 813 with the insulating layer 816 interposed therebetween. At this time, the conductive layer 811a has a function as a back gate electrode. The insulating layer 814 has a function as a gate insulating layer. The oxide semiconductor layer 813 has a function as a channel formation layer. The conductive layers 815a and 815b have a function as a source electrode or a drain electrode. The insulating layer 816 has a function as a gate insulating layer. The conductive layer 818 has a function as a gate electrode.

[0220] The insulating layer 814 preferably has a function of blocking impurities such as hydrogen. For example, an aluminum oxide layer, a silicon nitride layer, etc. have a function of blocking hydrogen. In the configuration shown in FIG. 9(A), since the oxide semiconductor layer 813 is surrounded by the insulating layers 814 and 816, diffusion of impurities such as hydrogen from the outside (e.g., transistor 801) into the transistor 802 is suppressed.

[0221] Furthermore, the conductive layer 815a is connected to a conductive layer 811b formed of the same conductive film as the conductive layer 811a through an opening provided to penetrate the insulating layer 814, and the conductive layer 811b is connected to the gate electrode of the transistor 801.

[0222] Furthermore, on top of the transistor 802, wiring layers 822, 824, and 826 are sequentially stacked. The wiring layer 822 is connected to the conductive layer 815b by a wiring layer 821 embedded in an insulating layer. The wiring layer 824 is connected to the wiring layer 822 by a wiring layer 823 embedded in an insulating layer. The wiring layer 826 is connected to the wiring layer 824 by a wiring layer 825 embedded in an insulating layer. For example, the wiring layer 826 may be used as an external connection terminal.

[0223] Furthermore, the structure shown in FIG. 9(B) is a structure in which the transistor 801 and the transistor 802 are stacked, and a plurality of wiring layers stacked between the transistor 801 and the transistor 802 are provided. Furthermore, in FIG. 9(B), the terminal portion 803 is also shown.

[0224] On top of the transistor 801, wiring layers 831a, 833a, and 835a are sequentially stacked. The wiring layer 831a is connected to the gate electrode of the transistor 801. The wiring layer 8 33a is connected to the wiring layer 831a by a wiring layer 832a embedded in an insulating layer. The wiring layer 835a is connected to the wiring layer 833a by a wiring layer 834a embedded in an insulating layer.

[0225] Furthermore, the conductive layer 815a is connected to a conductive layer 811b formed of the same conductive film as the conductive layer 811a at an opening provided through the insulating layer 814. The conductive layer 811b is connected to the wiring layer 835a by a wiring layer 836a embedded in an insulating layer. a and the conductive layer 811b is connected to the wiring layer 835a by a wiring layer 836a embedded in an insulating layer.

[0226] Furthermore, on top of the transistor 802, a wiring layer 838a is stacked. The wiring layer 838a is connected to the conductive layer 815b by a wiring layer 837a embedded in an insulating layer.

[0227] Also, on the terminal portion 803, there are provided a wiring layer 831 formed of the same conductive film as the wiring layer 831a, a wiring layer 833b formed of the same conductive film as the wiring layer 833a, a wiring layer 835b formed of the same conductive film as the wiring layer 835a, a conductive layer 811c formed of the same conductive film as the conductive layer 811a, a conductive layer 815c formed of the same conductive film as the conductive layer 815a, a wiring layer 837b formed of the same conductive film as the wiring layer 837a, and a wiring layer 838b formed of the same conductive film as the wiring layer 838a, which are laminated in this order. The wiring layer 833b is embedded in the insulating layer and connected to the wiring layer 831b by a wiring layer 832b formed of the same conductive film as the wiring layer 832a. The wiring layer 835b is embedded in the insulating layer and connected to the wiring layer 833b by a wiring layer 834b formed of the same conductive film as the wiring layer 834a. The conductive layer 811c is embedded in the insulating layer and connected to the wiring layer 835b by a wiring layer 836b formed of the same conductive film as the wiring layer 836a. The conductive layer 815c is connected to the conductive layer 811c at an opening provided through the insulating layer 814. The wiring layer 838b is embedded in the insulating layer and connected to the conductive layer 815c by a wiring layer 837b formed of the same conductive film as the wiring layer 837a. For example, the wiring layer 838b may be used as an external connection terminal. a conductive layer 815c formed of the same conductive film as the conductive layer 815a, a wiring layer 837b formed of the same conductive film as the wiring layer 837a, and a wiring layer 838b formed of the same conductive film as the wiring layer 838a, which are laminated in this order. The wiring layer 833b is embedded in the insulating layer and connected to the wiring layer 831b by a wiring layer 832b formed of the same conductive film as the wiring layer 832a. The wiring layer 835b is embedded in the insulating layer and connected to the wiring layer 833b by a wiring layer 834b formed of the same conductive film as the wiring layer 834a. The conductive layer 811c is embedded in the insulating layer and connected to the wiring layer 835b by a wiring layer 836b formed of the same conductive film as the wiring layer 836a. The conductive layer 815c is connected to the conductive layer 811c at an opening provided through the insulating layer 814. The wiring layer 838b is embedded in the insulating layer and connected to the conductive layer 815c by a wiring layer 837b formed of the same conductive film as the wiring layer 837a. For example, the wiring layer 838b may be used as an external connection terminal. a wiring layer 837b formed of the same conductive film as the wiring layer 837a, and a wiring layer 838b formed of the same conductive film as the wiring layer 838a, which are laminated in this order. The wiring layer 833b is embedded in the insulating layer and connected to the wiring layer 831b by a wiring layer 832b formed of the same conductive film as the wiring layer 832a. The wiring layer 835b is embedded in the insulating layer and connected to the wiring layer 833b by a wiring layer 834b formed of the same conductive film as the wiring layer 834a. The conductive layer 811c is embedded in the insulating layer and connected to the wiring layer 835b by a wiring layer 836b formed of the same conductive film as the wiring layer 836a. The conductive layer 815c is connected to the conductive layer 811c at an opening provided through the insulating layer 814. The wiring layer 838b is embedded in the insulating layer and connected to the conductive layer 815c by a wiring layer 837b formed of the same conductive film as the wiring layer 837a. For example, the wiring layer 838b may be used as an external connection terminal. a wiring layer 837b formed of the same conductive film as the wiring layer 837a, and a wiring layer 838b formed of the same conductive film as the wiring layer 838a, which are laminated in this order. The wiring layer 833b is embedded in the insulating layer and connected to the wiring layer 831b by a wiring layer 832b formed of the same conductive film as the wiring layer 832a. The wiring layer 835b is embedded in the insulating layer and connected to the wiring layer 833b by a wiring layer 834b formed of the same conductive film as the wiring layer 834a. The conductive layer 811c is embedded in the insulating layer and connected to the wiring layer 835b by a wiring layer 836b formed of the same conductive film as the wiring layer 836a. The conductive layer 815c is connected to the conductive layer 811c at an opening provided through the insulating layer 814. The wiring layer 838b is embedded in the insulating layer and connected to the conductive layer 815c by a wiring layer 837b formed of the same conductive film as the wiring layer 837a. For example, the wiring layer 838b may be used as an external connection terminal. b is embedded in the insulating layer and connected to the wiring layer 831b by a wiring layer 832b formed of the same conductive film as the wiring layer 832a. The wiring layer 835b is embedded in the insulating layer and connected to the wiring layer 833b by a wiring layer 834b formed of the same conductive film as the wiring layer 834a. The conductive layer 811c is embedded in the insulating layer and connected to the wiring layer 835b by a wiring layer 836b formed of the same conductive film as the wiring layer 836a. The conductive layer 815c is connected to the conductive layer 811c at an opening provided through the insulating layer 814. The wiring layer 838b is embedded in the insulating layer and connected to the conductive layer 815c by a wiring layer 837b formed of the same conductive film as the wiring layer 837a. For example, the wiring layer 838b may be used as an external connection terminal. The conductive layer 815c is connected to the conductive layer 811c at an opening provided through the insulating layer 814. The wiring layer 838b is embedded in the insulating layer and connected to the conductive layer 815c by a wiring layer 837b formed of the same conductive film as the wiring layer 837a. For example, the wiring layer 838b may be used as an external connection terminal. The wiring layer 838b is embedded in the insulating layer and connected to the conductive layer 815c by a wiring layer 837b formed of the same conductive film as the wiring layer 837a. For example, the wiring layer 838b may be used as an external connection terminal. For example, the wiring layer 838b may be used as an external connection terminal.

[0228] Furthermore, each component will be described.

[0229] As the conductive layers 811a to 811c, the conductive layer 818, the wiring layers 831a to 838a, the wiring layers 831b to 838b, for example, molybdenum, titanium, chromium, Layers containing metal materials such as tantalum, magnesium, silver, tungsten, aluminum, copper, neodymium, ruthenium, or scandium can be applied. Also, as the conductive layers 811a to 811c, 818, and the wiring layers 831a to 838a, 831b to 838b, metal oxides or the like can be used.

[0230] As each insulating layer including the insulating layers 814 and 816, for example, a silicon oxide layer, a silicon nitride layer, a silicon oxynitride layer, a silicon nitride oxide layer, an aluminum oxide layer, an aluminum nitride layer, an aluminum oxynitride layer, an aluminum nitride oxide layer, a hafnium oxide layer, a gallium oxide layer, etc. can be used. For example, as the insulating layers 814 and 816, a silicon oxide layer or a silicon oxynitride layer or the like can be used. The above insulating layer may contain halogen. Note that the insulating layers 814 and 816 do not necessarily have to be provided.

[0231] As the oxide semiconductor layer 813, for example, In-based metal oxides, Zn-based metal oxides, In-Zn-based metal oxides, or In-Ga-Zn-based metal oxides or the like can be applied. The oxide semiconductor layer may have, for example, a non-single crystal. The non-single crystal has, for example, CAAC (C Axis Aligned Crystal), polycrystal, microcrystal, or amorphous. The amorphous has a higher density of defect levels than the microcrystal and CAAC. Also, the microcrystal has a higher density of defect levels than CAAC. Note that an oxide semiconductor having CAAC is called CAAC-OS (C Axis Aligned Crystalline Oxide Semiconductor). The oxide semiconductor layer may have, for example, CAAC-OS. CAAC-OS is, for example, It has an oxide semiconductor with a c-axis orientation, and the a-axis and / or b-axis are not macroscopically aligned.

[0232] Further, instead of some or all of the Ga contained in the In-Ga-Zn-based metal oxide, a metal oxide containing other metal elements may be used. As the other metal elements, for example, a metal element capable of bonding with more oxygen atoms than gallium may be used. For example, titanium, zirconium, hafnium, germanium, and any one or more of the elements of tin may be used. Further, as the other metal elements, lanthanum, cerium, praseodymium, neodymium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, and any one or more of the elements of lutetium may be used. These metal elements have a function as a stabilizer. Note that the addition amount of these metal elements is an amount that enables the metal oxide to function as a semiconductor. By using a metal element capable of bonding with more oxygen atoms than gallium and further supplying oxygen to the metal oxide, the oxygen defects in the metal oxide can be reduced.

[0233] As the conductive layers 815a to 815c, for example, layers containing metal materials such as molybdenum, titanium, chromium, tantalum, magnesium, silver, tungsten, aluminum, copper, neodymium, ruthenium, or scandium can be applied. Also, metal oxides or the like may be used as the conductive layers 815a to 815c.

[0234] As shown in FIG. 9, in an example of the apparatus 100 according to the present embodiment, by stacking different transistors, the circuit area can be reduced.

[0235] Note that the structure of the device 200 is not limited to this, and may be the above structure.

[0236] (Embodiment 5) In this embodiment, an example of the structure of the device 100 will be described with reference to FIGS. 10 to 17.

[0237] FIGS. 10(A) and 10(B) are diagrams showing the external views of the device 100. The device 100 has a circuit board 900 and a power storage body 913. A label 910 is attached to the power storage body 913. Furthermore, as shown in FIG. 10(B), the device 100 has a terminal 951 and a terminal 95 2, and has an antenna 914 and an antenna 915 on the back of the label 910.

[0238] The circuit board 900 has a terminal 911 and a circuit 912. The terminal 911 is connected to the terminal 951 , the terminal 952, the antenna 914, the antenna 915, and the circuit 912. Note that a plurality of terminals 911 may be provided, and each of the plurality of terminals 911 may be used as a control signal input terminal, a power supply terminal or the like.

[0239] The circuit 912 has, for example, the circuits 113, 115, 116, 11 9, 121, the transistors 131, 132, 150, and 170 shown in FIG. 2(A). The circuit 912 may be provided on the back surface of the circuit board 900. Note that the antenna 914 corresponds to the antenna 114, and the antenna 915 corresponds to the antenna 118. Note that the antennas 914 and 915 are not limited to a coil shape , and may be, for example, linear or plate-shaped. Also, antennas such as planar antennas, aperture antennas, traveling wave antennas, EH antennas, magnetic field antennas, and dielectric antennas may be used. Or ​ Antenna 914 or antenna 915 may be a flat conductor. This flat conductor can function as one of the conductors for electric field coupling. That is, as one of the two conductors of the capacitor, antenna 914 or antenna 915 may be made to function. Thereby, power can be exchanged not only by electromagnetic fields and magnetic fields but also by an electric field.

[0240] The power storage body 913 corresponds to the power storage body 111 shown in FIG. 2(A).

[0241] The line width of antenna 914 is preferably larger than the line width of antenna 915. Thereby, the amount of power received by antenna 914 can be increased.

[0242] The device 100 has a layer 916 between the antennas 914 and 915 and the power storage body 913. The layer 916 can function, for example, to prevent shielding of the electromagnetic field with respect to the power storage body 913. As the layer 916, for example, a magnetic material can be used. The layer 916 may be a shielding layer.

[0243] Note that the structure of the device 100 is not limited to that shown in FIG. 10.

[0244] For example, as shown in FIGS. 11(A-1) and 11(A-2), antennas may be provided on each of a pair of opposing surfaces of the power storage body 913 shown in FIGS. 10(A) and 10(B). FIG. 11(A-1) is an external view seen from one side direction of the pair of surfaces, and FIG. 11(A-2) is an external view seen from the other side direction of the pair of surfaces. Note that for the same parts as those of the device 100 shown in FIGS. 10(A) and 10(B), the same reference numerals are used as those shown in FIGS. 10(A) and 10(B). -2). 10(B). ​​The description of the device 100 can be appropriately incorporated as needed.

[0245] As shown in Fig. 11(A-1), an antenna 914 is provided with a layer 916 sandwiched between one of the pair of surfaces of the power storage body 913. As shown in Fig. 11(A-2), an antenna 915 is provided with a layer 917 sandwiched between the other of the pair of surfaces of the power storage body 913. The layer 917 has a function that can prevent shielding of the electromagnetic field with respect to the power storage body 913, for example. As the layer 917, a magnetic body can be used, for example. The layer 917 may be a shielding layer. By adopting the above structure, the sizes of both the antenna 914 and the antenna 915 can be increased.

[0246]

[0247] Alternatively, as shown in Figs. 11(B-1) and 11(B-2), another antenna may be provided on each of a pair of opposing surfaces of the power storage body 913 shown in Figs. 10(A) and 10(B). Fig. 11(B-1) is an external view seen from one side direction of the pair of surfaces, and Fig. 11(B-2) is an external view seen from the other side direction of the pair of surfaces. For the same parts as those of the device 100 shown in Figs. 10(A) and 10(B), the description of the device 100 shown in Figs. 10(A) and 10(B) can be appropriately incorporated as needed.

[0248] As shown in Fig. 11(B-1), an antenna 914 and an antenna 915 are provided with a layer 916 sandwiched between one of the pair of surfaces of the power storage body 913. As shown in Fig. 11(B-2), an antenna 918 is provided with a layer 917 sandwiched between the other of the pair of surfaces of the power storage body 913. The antenna 918 has a function that can perform data communication with an external device, for example. ​​​​​​​​​​​For example, an antenna having a shape applicable to antenna 914 and antenna 915 may be applied. The communication method between the device 100 and other devices via the antenna 918 is NF C, etc., to apply a response method that can be used between the device 100 and the device 200. can be done.

[0249] 12A, the power storage unit 913 shown in FIG. A display device 920 may be provided. The display device 920 is connected to the terminal 911 via the terminal 919. The label 910 is not provided on the portion where the display device 920 is provided. The same parts as those of the device 100 shown in FIG. 10(A) and FIG. 10(B) are as follows: The description of the device 100 shown in Figures 10(A) and 10(B) can be used as appropriate.

[0250] The display device 920 displays, for example, an image indicating whether charging is in progress, an image indicating the amount of stored power, etc. The display device 920 may be, for example, an electronic paper, a liquid crystal display device, an electrophotographic display device, or the like. For example, an electroluminescence (EL) display device can be used. By using the par, the power consumption of the display device 920 can be reduced.

[0251] 12B, the power storage unit 913 shown in FIG. A sensor 921 may be provided. The sensor 921 is electrically connected to the terminal 911 via a terminal 922. The sensor 921 may be provided on the back side of the label 910. The same parts as those of the device 100 shown in FIG. 10(A) and FIG. 10(B) are shown in FIG. The description of the device 100 shown in FIG. 10(B) can be used as appropriate.

[0252] As the sensor 921, for example, a sensor applicable to the sensor 235 can be used. . Therefore, the sensor 921 may be used as the sensor 235. By providing the sensor 921, for example, data (such as temperature) indicating the environment where the device 100 is placed can be detected and stored in the memory in the circuit 912.

[0253] Furthermore, a structural example of the power storage body 913 will be described with reference to FIGS. 13 and 14.

[0254] The power storage body 913 shown in FIG. 13(A) has a wound body 950 provided with a terminal 951 and a terminal 952 inside a housing 930. The wound body 950 is impregnated with an electrolytic solution inside the housing 930. The terminal 952 is in contact with the housing 930, and the terminal 951 is not in contact with the housing 930 by using an insulating material or the like. In FIG. 13(A), for convenience, the housing 930 is shown separately, but actually, the wound body 950 is covered by the housing 930, and the terminals 951 and 952 extend outside the housing 930. As the housing 930, a metal material (such as aluminum) or a resin material can be used.

[0255] Note that, as shown in FIG. 13(B), the housing 930 shown in FIG. 13(A) may be formed of a plurality of materials. For example, the power storage body 913 shown in FIG. 13(B) has a housing 930a and a housing 93 0b bonded together, and a wound body 95 0 is provided in the region surrounded by the housing 930a and the housing 930b.

[0256] As the housing 930a, an insulating material such as an organic resin can be used. In particular, by using a material such as an organic resin on the surface where the antenna is formed, the electric field with respect to the power storage body 913 Shielding can be suppressed. If the shielding of the electric field by the housing 930a is small, antennas such as the antenna 914 and the antenna 915 may be provided inside the housing 930. As for the housing 930b, for example, a metal material can be used.

[0257] Furthermore, the structure of the winding body 950 is shown in FIG. 14. The winding body 950 includes a negative electrode 931, a positive electrode 932, and a separator 933. The winding body 950 is a wound body in which the negative electrode 931 and the positive electrode 932 overlap and are laminated with the separator 933 interposed therebetween, and the laminated sheet is wound. The negative electrode 931 is connected to the terminal 911 shown in FIG. 10 through one of the terminals 951 and 952. The positive electrode 932 is connected to the terminal 911 shown in FIG. 10 through the other of the terminals 951 and 952.

[0258]

[0259] Furthermore, each component will be described.

[0260] An example of the negative electrode 931 will be described with reference to FIG. 15.

[0261] As shown in FIG. 15(A), the negative electrode 931 includes a negative electrode current collector 961 and a negative electrode active material layer 962 provided on both sides or one side (the case of both sides is shown in the figure) of the negative electrode current collector 961.

[0262] The negative electrode current collector 961 is made of a highly conductive material that does not alloy with carrier ions such as lithium. For example, stainless steel, iron, copper, nickel, or titanium can be used. Also, the negative electrode current collector 961 can appropriately use shapes such as foil, plate (sheet), net, punching metal, expanded metal, etc. The negative electrode current collector It is preferable to use one with a thickness of 10 μm or more and 30 μm or less for 961.

[0263] The negative electrode active material layer 962 is provided on one or both sides of the negative electrode current collector 961. The negative electrode active material layer 9 As 962, in addition to lithium metal, graphite, which is a common carbon material in the field of electricity storage, can be used. Graphite includes soft carbon and hard carbon as low-crystalline carbon, and as high-crystalline carbon, natural graphite, kish graphite, pyrolytic carbon, liquid crystal pitch-based carbon fiber, mesocarbon microbeads (MCMB), liquid crystal pitch, petroleum or coal-based coke, etc. can be used.

[0264] In addition to the above materials, alloy-based materials capable of performing charge and discharge reactions through alloying and dealloying reactions with carrier ions can be used as the negative electrode active material. When the carrier ion is a lithium ion, as the alloy-based material, for example, a material containing at least one of Mg, Ca, Al, Si, Ge, Sn, Pb, As, Sb, Bi, Ag, Au, Zn, Cd, Hg, and In, etc. can be used.

[0265] For example, the surface of the negative electrode active material may be coated with an oxide film such as a metal or silicon. By coating the surface of the negative electrode active material with the above oxide film, the formation of a solid electrolyte interface (also referred to as a Solid Electrolyte Interphase) film can be suppressed, and the generation of irreversible capacity can be suppressed.

[0266] In this embodiment, a conductive assistant and a binder are added to the above materials, mixed, and fired to prepare the negative electrode active material layer 962 for use.

[0267] Using FIG. 15(B), the negative electrode active material layer 962 will be described. FIG. 15(B) is a cross-section of a part of the negative electrode active material layer 9 62. The negative electrode active material layer 962 includes the above electrode material, a conductive assistant 97 4, and a binder (not shown).

[0268] The conductive assistant 974 has a function of improving the conductivity between the granular negative electrode active materials 973 and between the granular negative electrode active materials 973 and the negative electrode current collector 9 61. For example, it is preferable to add the conductive assistant 97 4 to the negative electrode active material layer 962. As the conductive assistant 974, a material with a large specific surface area is desirable , and acetylene black (AB) etc. can be applied. Also, carbon materials such as carbon nanotubes, graphene , and fullerenes may be applied as the conductive assistant 974. Note that the case of using graphene as an example will be described later.

[0269] Also, the binder may be any material that binds the negative electrode active material, the conductive assistant, and the current collector. As the binder, for example, resin materials such as polyvinylidene fluoride (pVdF), vinylidene fluoride - hexa fluoropropylene copolymer, vinylidene fluoride - tetrafluoroethylene copolymer, styrene - butadiene copolymer rubber, polytetrafluoroethylene, polypropylene , polyethylene, and polyimide can be used.

[0270] The negative electrode 931 is manufactured as follows. First, the electrode material is mixed in a solvent such as NMP (N - methylpyrrolidone) in which a vinylidene fluoride - based polymer such as polyvinylidene fluoride is dissolved to form a slurry.

[0271] Next, the slurry is applied to one or both sides of the negative electrode current collector 961 and dried. The application When the process is carried out on both sides of the negative electrode current collector 961, the negative electrode active material layer 962 is formed on both sides simultaneously or one side at a time. After that, rolling is performed using a roll press, and the negative electrode 931 is manufactured .

[0272] Next, an example in which graphene is used as a conductive assistant added to the negative electrode active material layer 962 will be described with reference to FIGS. 15(C) and 15(D).

[0273] Here, in this specification, graphene includes single-layer graphene or multi-layer graphene of 2 layers or more and 100 layers or less. Single-layer graphene refers to a sheet of a one-atom layer of carbon molecules having π bonds. Also, graphene oxide refers to a compound in which the above-mentioned graphene is oxidized. When graphene is formed by reducing graphene oxide, not all of the oxygen contained in graphene oxide is desorbed, and some oxygen remains in the graphene. When oxygen is contained in the graphene, the proportion of oxygen is 2 atomic% or more and 20 atomic% or less, preferably 3 atomic% or more and 15 atomic% or less of the entire graphene when measured by XPS (X-ray Photoelectron Spectroscopy).

[0274] FIG. 15(C) is a plan view of a part of the negative electrode active material layer 962 using graphene. The negative electrode active material layer 962 is composed of granular negative electrode active material 973 and graphene 975 that covers a plurality of granular negative electrode active materials 973 and in which the granular negative electrode active materials 973 are packed inside. Regarding the binder not shown, it may be added, but when the graphene 975 is contained to such an extent that it functions sufficiently as a binder by adhering to each other, it is not always necessary to add a binder. ​​​​​​​​​​​It is not necessary to add an underlayer. The negative electrode active material layer 962 in plan view is composed of a plurality of negative electrode active materials 973 whose surfaces are covered with different graphene 975. In some parts, granular negative electrode active material 9 73 may be exposed.

[0275] Figure 15(D) is a cross-sectional view of a part of the negative electrode active material layer 962 in Figure 15(C). Granular negative electrode active material 973 and graphene 975 covering the granular negative electrode active material 973 in plan view of the negative electrode active material layer 962 are shown. In the cross-sectional view, graphene 975 is observed linearly. The same graphene or a plurality of graphenes overlap a plurality of granular negative electrode active materials 9 73, or a plurality of granular negative electrode active materials 973 are included in the same graphene or a plurality of graphenes. Note that graphene 975 is in a bag shape, and inside it there may be a plurality of granular negative electrode active materials included. Also, graphene 975 has a partially open portion, and in this region, granular negative electrode active material 973 may be exposed. In addition, as the thickness of the negative electrode active material layer 962, it is preferable to select a desired thickness between 20 μm and 150 μm.

[0276] In addition, the negative electrode active material layer 962 may be pre-doped with lithium. As a method of pre-doping lithium, a lithium layer may be formed on the surface of the negative electrode active material layer 962 by sputtering. Or, by providing a lithium foil on the surface of the negative electrode active material layer 96

[0277] 2, the negative electrode active material layer 96 2 can be pre-doped with lithium. In addition, in the granular negative electrode active material 973, the volume expands due to the occlusion of carrier ions.

[0278] There is something. Therefore, due to charge and discharge, the negative electrode active material layer becomes brittle, and a part of the negative electrode active material layer collapses, resulting in a decrease in the reliability of the power storage device such as cycle characteristics.

[0279] However, even if the volume of the negative electrode active material increases or decreases due to charge and discharge, when the graphene 975 covers the periphery of the granular negative electrode active material 973, the graphene 975 can prevent the dispersion of the negative electrode active material and the collapse of the negative electrode active material layer. That is, the graphene 975 has a function of maintaining the bonding between the negative electrode active materials even when the volume of the negative electrode active material increases or decreases with charge and discharge. In other words, when forming the negative electrode active material layer 962, it is not necessary to use a binder, and in the negative electrode active material layer 962 of a certain weight (certain volume), it is possible to increase the amount of the negative electrode active material. Therefore, the charge and discharge capacity per electrode weight (electrode volume) can be increased. Consequently, the charge and discharge capacity per electrode weight (electrode volume) can be increased. Therefore, the charge and discharge capacity per electrode weight (electrode volume) can be increased.

[0280] In addition, the graphene 975 has conductivity and also functions as a conductive aid because it is in contact with a plurality of granular negative electrode active materials 973. That is, when forming the negative electrode active material layer 962, it is not necessary to use a conductive aid, and in the negative electrode active material layer 962 of a certain weight (certain volume), it is possible to increase the amount of the negative electrode active material. Therefore, the charge and discharge capacity per electrode weight (electrode volume) can be increased. Therefore, the charge and discharge capacity per electrode weight (electrode volume) can be increased.

[0281] In addition, the graphene 975 can improve the conductivity of the negative electrode 931 because it efficiently and sufficiently forms an electron conduction path in the negative electrode active material layer 962.

[0282] Note that the graphene 975 also functions as a negative electrode active material capable of intercalating and deintercalating carrier ions, so the charging capacity of the negative electrode 931 can be improved. Therefore, the charging capacity of the negative electrode 931 can be improved. ​

[0283] Note that the above graphene may be used as a positive electrode active material.

[0284] Next, a method for manufacturing the negative electrode active material layer 962 shown in FIGS. 15(C) and 15(D) will be described. as follows.

[0285] First, knead using an electrode material and a dispersion liquid containing graphene oxide to form a slurry.

[0286] Next, apply the above slurry onto the negative electrode current collector 961. Next, perform vacuum drying for a certain period of time to remove the solvent from the slurry coated on the negative electrode current collector 961. After that, perform rolling processing using a roll press machine.

[0287] Thereafter, graphene 975 is generated by electrochemical reduction of graphene oxide using electrical energy or thermal reduction of graphene oxide by heat treatment. In particular, when performing electrochemical reduction treatment, compared with the graphene formed by heat treatment, the ratio of carbon atoms having π bonds increases, so that highly conductive graphene 975 can be formed. By the above steps, a negative electrode active material layer 962 using graphene as a conductive assistant can be formed on one or both sides of the negative electrode current collector 961, and the negative electrode 931 can be manufactured.

[0288] Next, the positive electrode 932 will be described with reference to FIG. 16.

[0289] FIG. 16(A) is a cross-sectional view of the positive electrode 932. The positive electrode 932 has a positive electrode active material layer 982 formed on the positive electrode current collector 981.

[0290] The positive electrode current collector 981 includes stainless steel, gold, platinum, zinc, iron, copper, aluminum, titanium, etc. ​​Metals, alloys thereof, and other highly conductive materials can be used. Also, silicon Elements such as silicon, titanium, neodymium, scandium, molybdenum, etc. that improve heat resistance can be added and aluminum alloys containing them can be used. Also, it may be formed of a metal element that reacts with silicon to form a silicide . Examples of metal elements that react with silicon to form a silicide include zirconium, titanium, hafnium, vanadium, niobium, tantalum, chromium , molybdenum, tungsten, cobalt, nickel, etc. The positive electrode current collector 981 can be appropriately used in the form of foil, plate (sheet), net, punched metal, expanded metal, etc .

[0291] The positive electrode active material layer 982 may contain, in addition to the positive electrode active material, a conductive assistant and a binder .

[0292] Examples of the positive electrode active material of the positive electrode active material layer 982 include LiFeO 2 , LiCoO 2 , LiNiO 2 , LiMn 2 O 4 , V 2 O 5 , Cr 2 O 5 , MnO 2 , etc. Compounds can be used as materials .

[0293] Alternatively, lithium-containing composite phosphates (general formula LiMPO 4 (M is one or more of Fe(II), Mn(I I), Co(II), Ni(II))) can be used. Representative examples of the general formula LiMP O 4 include LiFePO 4 , LiNiPO 4 , LiCoPO 4 , LiMnP O 4 、LiFe a Ni b PO 4 、LiFe a Co b PO 4 、LiFe a Mn b PO 4 、L iNi a Co b PO 4 、LiNi a Mn b PO 4 (a + b is less than or equal to 1, 0 < a < 1, 0 < b <1), LiFe c Ni d Co e PO 4 、LiFe c Ni d Mn e PO 4 、LiNi c C o d Mn e PO 4 (c + d + e is less than or equal to 1, 0 < c < 1, 0 < d < 1, 0 < e < 1), Li Fe f Ni g Co h Mn i PO 4 (f + g + h + i is less than or equal to 1, 0 < f < 1, 0 < g < 1, 0 < h < 1, 0 < i < 1), etc., lithium compounds can be used as the active material.

[0294] Or, a lithium - containing complex silicate such as the general formula Li (2-j) MSiO 4 (M is one or more of Fe(II), Mn(II), Co(I I), Ni(II), 0 ≦ j ≦ 2), etc., can be used. For the general formula Li (2-j) MSiO 4 Typical examples include Li (2-j) FeSi O 4 、Li (2-j) NiSiO4 , Li (2-j) CoSiO 4 , Li (2-j) Mn SiO 4 , Li (2-j) Fe k Ni l SiO 4 , Li (2-j) Fe k Co l SiO 4 , Li (2-j) Fe k Mn l SiO 4 , Li (2-j) Ni k Co l SiO 4 , Li ( 2-j) Ni k Mn l SiO 4 (k + l is 1 or less, 0 < k < 1, 0 < l < 1), Li (2 -j) Fe m Ni n Co q SiO 4 , Li (2-j) Fe m Ni n Mn q SiO 4 , Li (2-j) Ni m Co n Mn q SiO 4 (m + n + q is 1 or less, 0 < m < 1, 0 < n < 1 , 0 < q < 1), Li (2-j) Fe r Ni s Co t Mn u SiO 4 (r + s + t + u is 1 or less, 0 < r < 1, 0 < s < 1, 0 < t < 1, 0 < u < 1) etc. can be used as materials .

[0295] In addition, when the carrier ions are alkali metal ions other than lithium ions or alkaline earth metal ions, as the positive electrode active material layer 982, in the above lithium compound, lithium-containing composite phosphate, and lithium-containing composite silicate, instead of lithium, an alkali metal (for example, sodium, potassium, etc.) or an alkaline earth metal (for example, calcium, strontium, barium, beryllium, magnesium, etc.) may be used. In the case of a positive electrode active material layer 982, the above lithium compound, lithium-containing composite phosphate, and lithium-containing composite silicate may be used with an alkali metal ( for example, sodium, potassium, etc.) or an alkaline earth metal (for example, calcium, strontium ium, barium, beryllium, magnesium, etc.) substituted for lithium. Also, the positive electrode active material layer 982 is not limited to being formed directly in contact with the positive electrode current collector 981.

[0296] A functional layer such as an adhesion layer for improving the adhesion between the positive electrode current collector 981 and the positive electrode active material layer 982, a flattening layer for alleviating the uneven shape of the surface of the positive electrode current collector 981, a heat dissipation layer for heat dissipation, or a stress relaxation layer for relaxing the stress of the positive electrode current collector 981 or the positive electrode active material layer 982 may be formed using a conductive material such as a metal. Between the positive electrode current collector 981 and the positive electrode active material layer 982, a functional layer such as an adhesion layer for improving the adhesion between the positive electrode current collector 981 and the positive electrode active material layer 98 2, a flattening layer for alleviating the uneven shape of the surface of the positive electrode current collector 981, a heat dissipation layer for heat dissipation, or a stress relaxation layer for relaxing the stress of the positive electrode current collector 981 or the positive electrode active material layer 982 may be formed using a conductive material such as a metal. Figure 16(B) is a plan view of the positive electrode active material layer 982. As the positive electrode active material layer 982, particulate positive electrode active material 983 capable of occluding and releasing carrier ions is used. Also, an example containing graphene 984 in which a plurality of the positive electrode active materials 983 are covered and the positive electrode active materials 983 are packed inside is shown. Different graphene 984 covers the surfaces of the plurality of positive electrode active materials 983. Also, in part, the positive electrode active material 983 may be exposed. The particle size of the positive electrode active material 983 is preferably 20 nm or more and 100 nm or less. Since electrons move inside the positive electrode active material 983, it is preferable that the particle size of the positive electrode active material 983 is smaller.

[0297] Figure 16(B) is a plan view of the positive electrode active material layer 982. As the positive electrode active material layer 982, particulate positive electrode active material 983 capable of occluding and releasing carrier ions is used. Also, an example containing graphene 984 in which a plurality of the positive electrode active materials 983 are covered and the positive electrode active materials 983 are packed inside is shown. Different graphene 984 covers the surfaces of the plurality of positive electrode active materials 983. Also, in part, the positive electrode active material 983 may be exposed. Figure 16(B) is a plan view of the positive electrode active material layer 982. As the positive electrode active material layer 982, particulate positive electrode active material 983 capable of occluding and releasing carrier ions is used. Also, an example containing graphene 984 in which a plurality of the positive electrode active materials 983 are covered and the positive electrode active materials 983 are packed inside is shown. Different graphene 984 covers the surfaces of the plurality of positive electrode active materials 983. Also, in part, the positive electrode active material 983 may be exposed. Figure 16(B) is a plan view of the positive electrode active material layer 982. As the positive electrode active material layer 982, particulate positive electrode active material 983 capable of occluding and releasing carrier ions is used. Also, an example containing graphene 984 in which a plurality of the positive electrode active materials 983 are covered and the positive electrode active materials 983 are packed inside is shown. Different graphene 984 covers the surfaces of the plurality of positive electrode active materials 983. Also, in part, the positive electrode active material 983 may be exposed. Figure 16(B) is a plan view of the positive electrode active material layer 982. As the positive electrode active material layer 982, particulate positive electrode active material 983 capable of occluding and releasing carrier ions is used. Also, an example containing graphene 984 in which a plurality of the positive electrode active materials 983 are covered and the positive electrode active materials 983 are packed inside is shown. Different graphene 984 covers the surfaces of the plurality of positive electrode active materials 983. Also, in part, the positive electrode active material 983 may be exposed. Figure 16(B) is a plan view of the positive electrode active material layer 982. As the positive electrode active material layer 982, particulate positive electrode active material 983 capable of occluding and releasing carrier ions is used. Also, an example containing graphene 984 in which a plurality of the positive electrode active materials 983 are covered and the positive electrode active materials 983 are packed inside is shown. Different graphene 984 covers the surfaces of the plurality of positive electrode active materials 983. Also, in part, the positive electrode active material 983 may be exposed.

[0298] The particle size of the positive electrode active material 983 is preferably 20 nm or more and 100 nm or less. Since electrons move inside the positive electrode active material 983, it is preferable that the particle size of the positive electrode active material 983 is smaller. Since electrons move inside the positive electrode active material 983, it is preferable that the particle size of the positive electrode active material 983 is smaller.

[0299] ​Even if the surface of the positive electrode active material 983 is not coated with a graphite layer, sufficient characteristics can be obtained. However, it is more preferable to use both the positive electrode active material coated with the graphite layer and graphene because current flows. Figure 16(C) is a cross-sectional view of a part of the positive electrode active material layer 982 in Figure 16(B). It has a positive electrode active material 983 and graphene 984 covering the positive electrode active material 983. Graphene 984 is observed linearly in the cross-sectional view. A plurality of positive electrode active materials 983 are provided so as to be sandwiched between the same graphene 984 or a plurality of graphenes 984. Note that graphene 984 is in a bag shape and may enclose a plurality of positive electrode active materials 983 inside. Also, there may be a case where a part of the positive electrode active material is exposed without being covered by graphene. The thickness of the positive electrode active material layer 982 is selected to be a desired thickness between 20 μm and 100 μm. It is preferable to appropriately adjust the thickness of the positive electrode active material layer 982 so that cracks and peeling do not occur.

[0300] Even if the surface of the positive electrode active material 983 is not coated with a graphite layer, sufficient characteristics can be obtained. However, it is more preferable to use both the positive electrode active material coated with the graphite layer and graphene because current flows. Figure 16(C) is a cross-sectional view of a part of the positive electrode active material layer 982 in Figure 16(B). It has a positive electrode active material 983 and graphene 984 covering the positive electrode active material 983. Graphene 984 is observed linearly in the cross-sectional view. A plurality of positive electrode active materials 983 are provided so as to be sandwiched between the same graphene 984 or a plurality of graphenes 984. Note that graphene 984 is in a bag shape and may enclose a plurality of positive electrode active materials 983 inside. Also, there may be a case where a part of the positive electrode active material is exposed without being covered by graphene. Figure 16(C) is a cross-sectional view of a part of the positive electrode active material layer 982 in Figure 16(B). It has a positive electrode active material 983 and graphene 984 covering the positive electrode active material 983. Graphene 984 is observed linearly in the cross-sectional view. A plurality of positive electrode active materials 983 are provided so as to be sandwiched between the same graphene 984 or a plurality of graphenes 984. Note that graphene 984 is in a bag shape and may enclose a plurality of positive electrode active materials 983 inside. Also, there may be a case where a part of the positive electrode active material is exposed without being covered by graphene. Figure 16(C) is a cross-sectional view of a part of the positive electrode active material layer 982 in Figure 16(B). It has a positive electrode active material 983 and graphene 984 covering the positive electrode active material 983. Graphene 984 is observed linearly in the cross-sectional view. A plurality of positive electrode active materials 983 are provided so as to be sandwiched between the same graphene 984 or a plurality of graphenes 984. Note that graphene 984 is in a bag shape and may enclose a plurality of positive electrode active materials 983 inside. Also, there may be a case where a part of the positive electrode active material is exposed without being covered by graphene. Figure 16(C) is a cross-sectional view of a part of the positive electrode active material layer 982 in Figure 16(B). It has a positive electrode active material 983 and graphene 984 covering the positive electrode active material 983. Graphene 984 is observed linearly in the cross-sectional view. A plurality of positive electrode active materials 983 are provided so as to be sandwiched between the same graphene 984 or a plurality of graphenes 984. Note that graphene 984 is in a bag shape and may enclose a plurality of positive electrode active materials 983 inside. Also, there may be a case where a part of the positive electrode active material is exposed without being covered by graphene. Figure 16(C) is a cross-sectional view of a part of the positive electrode active material layer 982 in Figure 16(B). It has a positive electrode active material 983 and graphene 984 covering the positive electrode active material 983. Graphene 984 is observed linearly in the cross-sectional view. A plurality of positive electrode active materials 983 are provided so as to be sandwiched between the same graphene 984 or a plurality of graphenes 984. Note that graphene 984 is in a bag shape and may enclose a plurality of positive electrode active materials 983 inside. Also, there may be a case where a part of the positive electrode active material is exposed without being covered by graphene.

[0301] The thickness of the positive electrode active material layer 982 is selected to be a desired thickness between 20 μm and 100 μm. It is preferable to appropriately adjust the thickness of the positive electrode active material layer 982 so that cracks and peeling do not occur. The thickness of the positive electrode active material layer 982 is selected to be a desired thickness between 20 μm and 100 μm. It is preferable to appropriately adjust the thickness of the positive electrode active material layer 982 so that cracks and peeling do not occur. The thickness of the positive electrode active material layer 982 is selected to be a desired thickness between 20 μm and 100 μm. It is preferable to appropriately adjust the thickness of the positive electrode active material layer 982 so that cracks and peeling do not occur.

[0302] The positive electrode active material layer 982 may have a known conductive aid such as acetylene black particles that are 0.1 times or more and 10 times or less the volume of graphene or carbon nanofibers having a one-dimensional spread. The positive electrode active material layer 982 may have a known conductive aid such as acetylene black particles that are 0.1 times or more and 10 times or less the volume of graphene or carbon nanofibers having a one-dimensional spread. The positive electrode active material layer 982 may have a known conductive aid such as acetylene black particles that are 0.1 times or more and 10 times or less the volume of graphene or carbon nanofibers having a one-dimensional spread.

[0303] Depending on the material of the positive electrode active material, there are some that expand in volume due to the occlusion of ions serving as carriers. For this reason, due to charge and discharge, the positive electrode active material layer becomes brittle, and a part of the positive electrode active material layer collapses, resulting in a decrease in the reliability of the power storage device. However, when the positive electrode active material is charged Depending on the material of the positive electrode active material, there are some that expand in volume due to the occlusion of ions serving as carriers. For this reason, due to charge and discharge, the positive electrode active material layer becomes brittle, and a part of the positive electrode active material layer collapses, resulting in a decrease in the reliability of the power storage device. However, when the positive electrode active material is charged Depending on the material of the positive electrode active material, there are some that expand in volume due to the occlusion of ions serving as carriers. For this reason, due to charge and discharge, the positive electrode active material layer becomes brittle, and a part of the positive electrode active material layer collapses, resulting in a decrease in the reliability of the power storage device. However, when the positive electrode active material is charged Even if the volume increases or decreases due to discharge, the graphene covers the surrounding area, so the graphene acts as a positive electrode active material. In other words, graphene can prevent the dispersion of the electrolyte and the collapse of the positive electrode active material layer. Even if the volume of the positive electrode active material increases or decreases due to the change in the volume of the positive electrode active material, the positive electrode active material has a function of maintaining the bond between the positive electrode active materials. This makes it possible to improve the reliability of the electricity storage unit.

[0304] In addition, graphene 984 is in contact with multiple positive electrode active materials and also functions as a conductive additive. In addition, it has a function of retaining a positive electrode active material capable of absorbing and releasing carrier ions. Therefore, there is no need to mix a binder into the positive electrode active material layer, and the amount of positive electrode active material per positive electrode active material layer is It is possible to increase the discharge capacity of the electricity storage device.

[0305] Next, a method for producing the positive electrode active material layer 982 will be described.

[0306] First, a slurry containing particulate positive electrode active material and graphene oxide is formed. After the slurry is applied onto the dielectric body 981, a reduction process is performed by heating in a reducing atmosphere. The positive electrode active material is baked, and oxygen contained in the graphene oxide is removed, resulting in the graphene Note that not all of the oxygen contained in graphene oxide is released, and some of the oxygen remains in the graphene. The graphene oxide remains in the graphene. Hereinafter, this will be referred to as thermal reduction. Reduction by chemical reaction using a reducing agent such as hydrazine is not limited to this. (Hereinafter referred to as chemical reduction.) A potential is applied to the electrode in the electrolyte so that graphene oxide is reduced. Reduction methods other than thermal reduction, such as electrochemical reduction using a Through the above steps, a positive electrode active material layer 982 is formed on a positive electrode current collector 981. This can be achieved. As a result, the conductivity of the positive electrode active material layer 982 is increased.

[0307] Since graphene oxide contains oxygen, it is negatively charged in a polar solvent. As a result, graphene oxide disperses in the polar solvent. Therefore, the positive electrode active material contained in the slurry is less likely to aggregate, and an increase in the particle size of the positive electrode active material due to aggregation can be reduced. For this reason, the movement of electrons in the positive electrode active material becomes easier, and the conductivity of the positive electrode active material layer can be increased.

[0308] In addition, a carbon layer or the like may be formed on the surface of the positive electrode active material particles.

[0309] As the separator 933, cellulose (paper), or an insulator such as polypropylene or polyethylene provided with pores can be used.

[0310] In addition, the negative electrode 931, the positive electrode 932, and the separator 933 are impregnated with an electrolytic solution. As the electrolyte contained in the electrolytic solution, a material containing carrier ions is used. When lithium is used as the carrier ion, lithium salts such as LiClO , LiAsF 4 , LiBF 6 , LiPF 4 , Li 6 (C ( 2 F 5 SO 2 ) 2 N can be used.

[0311] In addition, when the carrier ion is an alkali metal ion other than lithium ion or an alkaline earth metal ion, as the electrolyte, in the above lithium salt, instead of lithium, an alkali metal (for example, sodium, potassium, etc.), an alkaline earth metal (for example, calcium, etc.) is used. ​​Strontium, barium, beryllium, magnesium, etc.) may also be used.

[0312] As the solvent for the electrolyte, a material capable of transporting carrier ions is used. The solvent is preferably an aprotic organic solvent. Representative examples of the aprotic organic solvent include , Ethylene carbonate (EC), Propylene carbonate, Dimethyl carbonate, Di Ethyl carbonate (DEC), γ-butyrolactone, acetonitrile, dimethoxyethane tetrahydrofuran, and the like, and one or more of these can be used.

[0313] In addition, by using a polymer material that gels as a solvent for the electrolyte, safety against leakage, etc. is improved. The safety of the lithium-ion battery is improved. In addition, the lithium-ion battery can be made thinner and lighter. Representative examples of polymeric materials include silicone gel, acrylic gel, and acrylonitrile gel. , polyethylene oxide, polypropylene oxide, fluorine-based polymers, etc.

[0314] In addition, a flame-retardant and non-volatile ionic liquid (room-temperature molten salt) was used as the solvent for the electrolyte. By using multiple batteries, the internal temperature of the lithium-ion battery can be prevented from rising due to internal short circuits or overcharging. Even if the temperature rises, it can prevent lithium-ion batteries from exploding or catching fire.

[0315] In addition, instead of the electrolyte, solid electrolytes containing inorganic materials such as sulfides and oxides, and P A solid electrolyte containing a polymer material such as EO (polyethylene oxide) can be used. When a solid electrolyte is used, the separator is not required. Since the device can be integrated into one body, there is no risk of leakage, and safety is improved dramatically.

[0316] Note that the configuration of the power storage body 913 is not limited to the configuration shown in FIG. 10. For a laminated power storage body 913, an example will be described with reference to FIG. 17.

[0317] The laminated power storage body 913 shown in FIG. 17 includes a positive electrode current collector 991 and a positive electrode active material layer 992 a positive electrode 993 having, a separator 997, a negative electrode current collector 994 and a negative electrode active material layer 995 a negative electrode 996 having are laminated, enclosed in an exterior body 999, and a battery in which an electrolytic solution 998 is injected exists. In FIG. 17, the power storage body 913 shows a structure in which a sheet-like positive electrode 993 and a negative electrode 996 are stacked one by one However, in order to increase the battery capacity, it is preferable to wind the above laminated structure or seal after stacking a plurality of sheets. In particular, when the form of a lithium ion battery is made into a laminated type, since the battery has flexibility, it is suitable for applications that require flexibility.

[0318] In the laminated power storage body 913 shown in FIG. 17, the positive electrode current collector 991 and the negative electrode current collector 9 94 also serve as terminals for obtaining electrical contact with the outside. Therefore, a part of the positive electrode current collector 99 1 and the negative electrode current collector 994 are arranged so as to be exposed to the outside from the exterior body 999.

[0319] In the laminated power storage body 913, the exterior body 999 is, for example, a film made of a material such as polyethylene, polypropylene ylene, polycarbonate, ionomer, polyamide, etc., and a metal thin film excellent in flexibility such as aluminum minium, stainless steel, copper, nickel, etc. is provided, and further on the metal A laminated film having a three-layer structure in which an insulating synthetic resin film such as a polyamide-based resin or a polyester-based resin is provided as the outer surface of the exterior body is provided on the thin film. By making such a three-layer structure ​​​Thereby, permeation of the electrolytic solution and gas is blocked, insulation is ensured, and at the same time, it has electrolyte resistance. To do.

[0320] Note that it is not limited to the laminate type, and for example, it may be a coin type or a square type.

[0321] Furthermore, a lithium-ion capacitor may be used for the power storage body 913.

[0322] The lithium-ion capacitor is a hybrid capacitor in which the negative electrode of a lithium-ion battery using a carbon material is combined with the positive electrode of an electric double layer capacitor (EDLC, abbreviated as Electric Double Layer Capacitor), and is an asymmetric capacitor in which the power storage principles of the positive electrode and the negative electrode are different. The positive electrode forms an electric double layer and performs charge and discharge by a physical action, while the negative electrode performs charge and discharge by a chemical action of lithium. By using a negative electrode in which lithium is previously occluded in a carbon material or the like that is the negative electrode active material, the energy density is dramatically improved compared to a conventional electric double layer capacitor using activated carbon as the negative electrode. ouble Layer Capacitor) and the negative electrode of a lithium-ion battery using a carbon material, and is a hybrid capacitor in which the power storage principles of the positive electrode and the negative electrode are different. The positive electrode forms an electric double layer and performs charge and discharge by a physical action, while the negative electrode performs charge and discharge by a chemical action of lithium. By using a negative electrode in which lithium is previously occluded in a carbon material or the like that is the negative electrode active material, the energy density is dramatically improved compared to a conventional electric double layer capacitor using activated carbon as the negative electrode. A hybrid capacitor in which the negative electrode of a lithium-ion battery using a carbon material is combined with the positive electrode of an electric double layer capacitor (EDLC, abbreviated as Electric Double Layer Capacitor), and is an asymmetric capacitor in which the power storage principles of the positive electrode and the negative electrode are different. The positive electrode forms an electric double layer and performs charge and discharge by a physical action, while the negative electrode performs charge and discharge by a chemical action of lithium. By using a negative electrode in which lithium is previously occluded in a carbon material or the like that is the negative electrode active material, the energy density is dramatically improved compared to a conventional electric double layer capacitor using activated carbon as the negative electrode. The positive electrode forms an electric double layer and performs charge and discharge by a physical action, while the negative electrode performs charge and discharge by a chemical action of lithium. In contrast, the negative electrode performs charge and discharge by the chemical action of lithium. By using a negative electrode in which lithium is previously occluded in a carbon material or the like that is the negative electrode active material, the energy density is dramatically improved compared to a conventional electric double layer capacitor using activated carbon as the negative electrode. By using a negative electrode in which lithium is previously occluded in a carbon material or the like that is the negative electrode active material, the energy density is dramatically improved compared to a conventional electric double layer capacitor using activated carbon as the negative electrode. Compared with a conventional electric double layer capacitor using activated carbon as the negative electrode, the energy density is dramatically improved.

[0323] For the lithium-ion capacitor, instead of the above positive electrode active material layer, a material that can reversibly support at least one of lithium ions and anions may be used. Examples of such materials include activated carbon, conductive polymers, polyacene-based organic semiconductors (PAS, abbreviated as PolyAcenic Semiconductor), and the like. For such a material, for example, activated carbon, conductive polymers, polyacene-based organic semiconductors (PAS, abbreviated as PolyAcenic Semiconductor), and the like can be mentioned. For example, activated carbon, conductive polymers, polyacene-based organic semiconductors (PAS, abbreviated as PolyAcenic Semiconductor), and the like. Semiconductor), etc. can be mentioned.

[0324] The lithium-ion capacitor has high charge and discharge efficiency, enables rapid charge and discharge, and has a long life with repeated use. The life with repeated use is also long.

[0325] Use the above negative electrode for the negative electrode of such a lithium-ion capacitor. Thereby, the initial non- It is possible to fabricate an electric storage device that suppresses the generation of reversible capacity and improves cycle characteristics. Moreover, it is possible to fabricate an electric storage device having excellent high-temperature characteristics.

[0326] (Embodiment 6) In this embodiment, an electric device will be described.

[0327] Here, the electric device refers to an industrial product including a part that operates by electric power. The electric device is not limited to consumer use such as home appliances, but broadly includes those for various applications such as business use, industrial use, and military use within this category.

[0328] Examples of electric devices to which the electric storage device according to one aspect of the present invention can be applied include, for example, display devices such as televisions and monitors, lighting devices, personal computers such as desktop and notebook types, word processors, image playback devices that play still images or moving images stored on any recording medium such as DVDs (Digital Versatile Discs), portable or stationary audio playback devices such as CD (Compact Disc) players and digital audio players, portable or stationary radio receivers, recording and playback devices such as tape recorders and IC recorders (voice recorders), headphone stereos, stereos, remote controllers, clocks such as table clocks and wall-mounted clocks, cordless telephone handsets, transceivers, mobile phones, car phones, portable or stationary game machines, pedometers, calculators, portable information terminals, electronic notebooks, electronic books, electronic translators, voice input devices such as microphones, photographic devices such as still cameras and video cameras, toys, electric shavers, electric toothbrushes, high-frequency heating devices such as microwave ovens, electric rice cookers, electric washing machines, vacuum cleaners, water heaters, fans, hair dryers, humidifiers, dehumidifiers, and air conditioners etc. washing machines, electric vacuum cleaners, water heaters, fans, hair dryers, humidifiers, dehumidifiers, and air conditioners Air conditioning equipment such as sodium, dishwashers, dish dryers, clothes dryers, futon dryers, electric refrigerators, electric freezers, electric refrigerator-freezers, DNA storage freezers, flashlights, power tools, smoke detectors, hearing aids, cardiac pacemakers, portable X-ray imaging devices, radiation measuring instruments, electric massagers, and health equipment and medical equipment such as dialysis devices. Furthermore, induction lamps, traffic lights, gas meters, measuring instruments such as water meters, belt conveyors, elevators, escalators, vending machines, automatic ticket machines, cash dispensers (abbreviation for CD. Cash Dispenser), and cash deposit and payment machines (abbreviation for ATM. Automated Teller Machine), digital signage (electronic billboards), industrial robots, wireless repeaters, base stations for mobile phones, power storage systems, secondary batteries for power leveling and smart grids, and other industrial equipment. In addition, moving bodies (transport bodies) propelled by electric motors using power from secondary batteries are also considered to be within the scope of electrical equipment. Examples of the above moving bodies include electric vehicles (EVs), hybrid vehicles (HEVs) equipped with both internal combustion engines and electric motors, plug-in hybrid vehicles (PHEVs), tracked vehicles obtained by changing the tires and wheels of these vehicles to endless tracks, motorized bicycles including electric assist bicycles, motorcycles, electric wheelchairs, electric carts, small or large ships, submarines, aircraft such as fixed-wing aircraft and rotary-wing aircraft, rockets, artificial satellites, space probes, and spacecraft.

[0329] Note that the above electrical equipment can use the power storage device according to one aspect of the present invention as a main power source to supply almost all of the power consumption. In addition, the above electrical equipment can be an uninterruptible power supply that can supply power to the electrical equipment when the supply Thus, the power storage device according to one aspect of the present invention can be used. Alternatively, the electrical device , in parallel with the supply of power from the main power supply or commercial power supply to the electrical device, can supply power to the electrical device using the power storage device according to one aspect of the present invention as an auxiliary power supply.

[0330] Here, as an example, a mobile terminal is shown in FIGS. 18(A) and 18(B). FIG. 18( A) is a view of the mobile terminal seen from the front, and FIG. 18(B) is a view of the mobile terminal seen from the back.

[0331] The mobile terminal 1100 shown in FIGS. 18(A) and 18(B) includes a housing 1111, a display unit 11 12, a power storage device 1113, and a power switch 1114.

[0332] The display unit 1112 can have a part as a touch panel area, and data can be input by touching the displayed operation keys. All areas of the display unit 1112 may be configured to have the function of a touch panel .

[0333] For the display unit 1112, for example, an electroluminescence (EL) display module , a liquid crystal display module can be used.

[0334] The power storage device 1113 is a cassette-type battery. The power storage device 1113 has a terminal 112 1. Note that the number of terminals 1121 is not particularly limited. By fitting the power storage device 1113 into the recess of the housing 11 11, the terminal 1121 is connected to the terminal 112 2 provided on the housing 1111. Thereby, power can be supplied from the power storage device 1113 to the circuit inside the housing 1111 . Note that after the power storage device 1113 is fitted into the recess of the housing 1111, the power storage device 111 ​3 may be exposed. Also, a lid may be provided on the power storage device 1113. Note that the power storage device 1113 is detachable from the mobile terminal 1100, but one aspect of the embodiment of the present invention is not limited to this. The user of the mobile terminal 1100 may not be able to remove the power storage device 1113. By fitting the power storage device 1113 into the recess of the housing 1111, the degree of freedom in arranging the internal components of the mobile terminal 1100 increases, and the mobile terminal 1100 can be made smaller and thinner. In such a case, the power storage device 111 3 can perform exchanges such as power while remaining inside the mobile terminal 1100. Note that, even when the power storage device 1113 is detachable from the mobile terminal 1100, the power storage device 1113 may perform exchanges such as power while remaining inside the mobile terminal 1100.

[0335] The mobile terminal shown in FIGS. 18(A) and 18(B) can have functions such as displaying various information (still images, moving images, text images, etc.), displaying a calendar, date or time, etc. on the display unit, a touch input function for touch input operation or editing of the information displayed on the display unit, and a function for controlling processing by various software (programs), etc.

[0336] Also, FIG. 19 is a block diagram of an example of a mobile terminal. The mobile terminal shown in FIG. 19 includes, for example, a wireless communication circuit 1131, an analog baseband circuit 1132, a digital baseband circuit 1 133, a power storage device 1134, a power supply circuit 1135, an application processor 1136, a display controller 1141, a memory 1142, a display 1143, a touch sensor It is composed of a touch sensor 1149, an audio circuit (such as a speaker and a microphone) 1147, and a keyboard 1148 which is one of the input means.

[0337] The power storage device 1134 corresponds to the power storage device 1113 shown in FIG. 18, and the other components correspond to the load.

[0338] The wireless communication circuit 1131 has a function of receiving, for example, radio waves including data. As the wireless communication circuit 1131, for example, an antenna or the like is used.

[0339] By providing the touch sensor 1149, the display unit 1144 on the display 1143 can be operated.

[0340] The display 1143 is composed of a display unit 1144, a source driver 1145, and a gate driver 1146. The operation of the display unit 1144 is controlled by the source driver 1145 and the gate driver 1146.

[0341] The application processor 1136 includes a CPU 1137, a digital signal processor (also referred to as DSP) 1138, and an interface (also referred to as IF) 1139.

[0342] Also, the memory 1142 is usually composed of SRAM or DRAM. However, by using the memory shown in FIG. 8, for example, the memory cost per bit can be reduced, and the power consumption of the memory 1142 can be reduced.

[0343] Furthermore, an operation example of the mobile terminal shown in FIG. 19 will be described.

[0344] First, an image is formed by a radio wave containing data or by the application processor 1136. The data stored in the memory 1142 is output to the display 1143 via the display controller 114 1, and the display 1143 displays an image corresponding to the input image data. As it is, if there is no change in the image, data is normally read from the memory 1142 at a period of 60 or more and 130H z or less, and the read data continues to be sent to the display controller 1141. When the user performs an operation to rewrite the screen the application processor 1136 forms a new image and stores the image in the memory 1142. During this period, image data is also regularly read from the memory 1142. When the me mory 1142 finishes storing new image data, in the next frame period on the display 1143, the data stored in the memory 1142 is read out, and the read data is output to the display 1143 via the display controller 1141. The display 1143 into which data is input displays an image corresponding to the input image data The above read operation continues until the next data is stored in the memory 1142. In this way, by writing and reading data in the memory 1142, the display 1143 performs a display operation.

[0345] FIGS. 20(A) and 20(B) are examples of power tools.

[0346] The power tool shown in FIG. 20(A) includes a housing 1211, a tip tool 1212, a trigger switch 1214, a power storage device 1216, and a detachable control switch 1217. Note that in the figure The electric power tool shown in FIG. 20(A) may be an electric drill. The tool may be an electric screwdriver.

[0347] The housing 1211 has a handle portion 1215 .

[0348] The tip tool 1212 may be, for example, a drill, a Phillips bit, or a flathead bit. The tip tool 1212 can be made detachable and can be used as a drill, a plastic, or a tool depending on the application. A straight bit or a minus bit may be appropriately selected and used.

[0349] In the electric power tool shown in FIG. 20(A), the power switch is turned on and the handle portion 1215 is By gripping the tool and turning on the trigger switch 1214, the tool tip 1212 is operated. It can be done.

[0350] The power storage device 1216 can be attached or detached by switching the attachment / detachment control switch 1217. The power storage device 1216 has a terminal similar to the mobile terminal shown in FIG. By connecting the terminal and a terminal provided on the housing 1211, the power storage device 1216 is The body 1211 can be powered.

[0351] The electric power tool shown in FIG. 20(B) includes a housing 1221, a blade 1222, and a trigger switch. The device has a switch 1224, a power storage device 1226, and a connection / disconnection control switch 1227. The power tool shown in 20(B) may be an electric cutter.

[0352] The housing 1221 has a handle portion 1225 .

[0353] In the electric power tool shown in FIG. 20(B), the handle portion 1225 is gripped and the trigger switch 122 is operated. By turning 4 on, the blade 1222 can be rotated to perform cutting operations and the like. This can be done.

[0354] The power storage device 1226 is detachable by switching the attachment / detachment control switch 1227. The power storage device 1226 has terminals similar to those of the mobile terminal shown in FIG. 18. By connecting the terminals of the power storage device 1226 to the terminals provided on the housing 1221, power can be supplied from the power storage device 1226 to the housing 1221.

[0355] Furthermore, an example of charging the above electrical equipment will be described with reference to FIG. 21.

[0356] In FIG. 21(A), an example is shown in which the mobile terminal 1100 shown in FIG. 18 is superimposed on the power supply device 1300. This is shown.

[0357] FIG. 21(B) is a view represented from the bottom surface direction of the mobile terminal. For example, in the case of electromagnetic induction, as shown in FIG. 21(B), by electromagnetic coupling between the antenna 1311 provided on the mobile terminal 1100 and the antenna 1312 provided on the power supply device 1300 to form a power transmission transformer, power can be supplied to the mobile terminal 1100.

[0358] In FIGS. 21(A) and 21(B), an example is shown in which the mobile terminal 1100 is superimposed on the power supply device 1300. However, as shown in FIG. 22, the power storage device 1113 may be removed from the mobile terminal 1100 and the power storage device 1113 may be superimposed on the power supply device 1300. That is, it may be.

[0359] Note that the configuration of the power supply device 1300 is not particularly limited. For example, by detecting the position of the mobile terminal 1100 and moving the antenna 1312 to superimpose it on the mobile terminal 1100 for charging A moving coil type may be used, or a multi-coil method may be applied in which a plurality of antennas 1312 are provided and superimposed on the mobile terminal 1100 for charging. For charging, an antenna 1312 that performs charging by superimposing multiple antennas 1312 on the mobile terminal 1100 may be applied, such as a multi-coil method.

[0360] The electrical device that can be charged by the power supply device 1300 is not limited to the above.

[0361] Fig. 23 shows the specific configuration of the above electrical device. In Fig. 23, the display device 1400 that can be supplied with power from the power supply device 1450 is an example of an electrical device using the power storage device 14 04 according to one aspect of the present invention. Specifically, the display device 1400 corresponds to a display device for receiving TV broadcasts and has a housing 1401, a display unit 1402, a speaker unit 1403, a power storage device 14 04, etc. The power storage device 1404 according to one aspect of the present invention is provided inside the housing 1401 The display device 1400 can be supplied with power from a commercial power supply or can use the power stored in the power storage device 1404. Therefore, even when power supply from the commercial power supply cannot be received due to a power outage or the like, the display device 1400 can be used by using the power storage device 1404 according to one aspect of the present invention as an uninterruptible power supply. The display unit 1402 may be a liquid crystal display device, a light-emitting device having a light-emitting element such as an organic EL element in each pixel, an electrophoretic display device, a DMD (Digital Micromirror Devi ce), a PDP (Plasma Display Panel), an FED (Field Emission Display), or other semiconductor display devices. In addition to being used for receiving TV broadcasts, the display device includes all display devices for information display, such as for personal computers and advertising displays. The display unit 1402 may be a liquid crystal display device, a light-emitting device having a light-emitting element such as an organic EL element in each pixel, an electrophoretic display device, a DMD (Digital Micromirror Device), a PDP (Plasma Display Panel), an FED (Field

[0362] The display unit 1402 may be a liquid crystal display device, a light-emitting device having a light-emitting element such as an organic EL element in each pixel, an electrophoretic display device, a DMD (Digital Micromirror Devi ce), a PDP (Plasma Display Panel), an FED (Field Emission Display), or other semiconductor display devices. For charging, an antenna 1312 that performs charging by superimposing multiple antennas 1312 on the mobile terminal 1100 may be applied, such as a multi-coil method.

[0363] In addition to being used for receiving TV broadcasts, the display device includes all display devices for information display, such as for personal computers and advertising displays. All display devices for information display are included.

[0364] In FIG. 23, a stationary lighting device 1410 capable of receiving power supply from a power supply device 1450 is an example of an electrical device using a power storage device 1413 according to an aspect of the present invention. . Specifically, the lighting device 1410 includes a housing 1411, a light source 1412, a power storage device 1413, etc. . Power is supplied to the power storage device 1413 from the power supply device 1450. In FIG. 23, the case where the power storage device 1413 is provided inside the ceiling 1414 where the housing 1411 and the light source 1412 are installed is illustrated, but the power storage device 1413 may be provided inside the housing 1411. The lighting device 1410 can receive power supply from a commercial power supply and can also use the power stored in the power storage device 1413. Therefore, even when power supply from the commercial power supply cannot be received due to a power outage or the like, by using the power storage device 1413 according to an aspect of the present invention as an uninterruptible power supply, the lighting device 1410 can be used.

[0365] Note that in FIG. 23, a stationary lighting device 1410 provided on the ceiling 1414 is illustrated, but the power storage device according to an aspect of the present invention can also be used for stationary lighting devices provided on, for example, side walls 1415, floors 1 416, windows 1417, etc., other than the ceiling 1414, and can also be used for desktop

[0366] type lighting devices and the like. Also, as the light source 1412, an artificial light source that artificially obtains light using power can be used. . Specifically, incandescent bulbs, discharge lamps such as fluorescent lamps, and light emitting elements such as LEDs and organic EL elements can be cited as examples of the above artificial light sources.

[0367] In FIG. 23, an indoor unit 1420 capable of receiving power supply from a power supply device 1450 and an outdoor unit 1424 of an air conditioner are an example of an electric device using a power storage device 142 3 according to one aspect of the present invention. Specifically, the indoor unit 1420 includes a housing 1421, an air outlet 1422, a power storage device 1423, and the like. In FIG. 23, the case where the power storage device 1423 is provided in the indoor unit 14 20 is illustrated, but the power storage device 1423 may be provided in the outdoor unit 1424 . Alternatively, the power storage device 14 23 may be provided in both the indoor unit 1420 and the outdoor unit 1424. The air conditioner can receive power supply from a commercial power supply , or can also use the power stored in the power storage device 1423. In particular, when the power storage device 1423 is provided in both the indoor unit 1420 and the outdoor unit 1424, even when power supply from the commercial power supply cannot be received due to a power outage or the like , by using the power storage device 1423 according to one aspect of the present invention as an uninterruptible power supply, the air conditioner can be used .

[0368] Note that in FIG. 23, a separate type air conditioner composed of an indoor unit and an outdoor unit is exemplified , but the power storage device according to one aspect of the present invention can also be used for an integrated type air conditioner having the functions of the indoor unit and the outdoor unit in one housing .

[0369] In FIG. 23, an electric refrigerator 1 430 capable of receiving power supply from a power supply device 1450 is an example of an electric device using a power storage device 1434 according to one aspect of the present invention. Specifically , the electric refrigerator 1430 includes a housing 1431, a refrigerator door 1432, a freezer door 14 33, a power storage device 1434, and the like. In FIG. 23, the case where the power storage device 1434 is in the housing 1431 It is provided inside. The electric refrigerator 1430 receives power supply from a commercial power source and can also use the power stored in the power storage device 1434. Therefore, even when power supply from the commercial power source cannot be received due to a power outage or the like, by using the power storage device 1434 according to an aspect of the present invention as an uninterruptible power supply, the electric refrigerator 1430 can be used. It can also use the power stored in the power storage device 1434. Thus, even when power supply from the commercial power source cannot be received due to a power outage or the like, by using the power storage device 1434 according to an aspect of the present invention as an uninterruptible power supply, the electric refrigerator 1430 can be used. When power supply from the commercial power source cannot be received due to a power outage or the like, by using the power storage device 1434 according to an aspect of the present invention as an uninterruptible power supply, the electric refrigerator 1430 can be used. By using the power storage device 1434 according to an aspect of the present invention as an uninterruptible power supply, the electric refrigerator 1430 can be used. It becomes possible.

[0370] In FIG. 23, the clock 1440 that can be supplied with power from the power supply device 1450 is an example of an electric device using the power storage device 1441 according to an aspect of the present invention. It is an example of an electric device using the power storage device 1441 according to an aspect of the present invention.

[0371] Among the above-described electric devices, high-frequency heating devices such as microwave ovens and electric rice cookers require high power in a short time. Therefore, by using the power storage device according to an aspect of the present invention as an auxiliary power supply to supplement the power that cannot be covered by the commercial power source, it is possible to prevent the breaker of the commercial power source from tripping when the electric device is used. High-frequency heating devices such as microwave ovens and electric rice cookers require high power in a short time. Therefore, by using the power storage device according to an aspect of the present invention as an auxiliary power supply to supplement the power that cannot be covered by the commercial power source, it is possible to prevent the breaker of the commercial power source from tripping when the electric device is used. By using the power storage device according to an aspect of the present invention as an auxiliary power supply to supplement the power that cannot be covered by the commercial power source, it is possible to prevent the breaker of the commercial power source from tripping when the electric device is used. When the electric device is used, it is possible to prevent the breaker of the commercial power source from tripping.

[0372] Also, during the time when the electric device is not used, especially during the time when the ratio of the actually used power amount to the total power amount that can be supplied by the commercial power source supplier (referred to as the power utilization rate) is low, by storing power in the power storage device, it is possible to suppress an increase in the power utilization rate outside the above time zone. Among the total power amount that can be supplied by the commercial power source supplier, during the time when the ratio of the actually used power amount (referred to as the power utilization rate) is low, by storing power in the power storage device, it is possible to suppress an increase in the power utilization rate outside the above time zone. By storing power in the power storage device, it is possible to suppress an increase in the power utilization rate outside the above time zone. For example, in the case of the electric refrigerator 1430, at night when the temperature is low and the opening and closing of the refrigerator door 1432 and the freezer door 1433 are not performed, power is stored in the power storage device 1434. At night when the temperature is low and the opening and closing of the refrigerator door 1432 and the freezer door 1433 are not performed, power is stored in the power storage device 1434. And during the day when the temperature rises and the opening and closing of the refrigerator door 1432 and the freezer door 1433 are performed, by using the power storage device 1434 as an auxiliary power supply, the power utilization rate during the day can be kept low. During the day when the temperature rises and the opening and closing of the refrigerator door 1432 and the freezer door 1433 are performed, by using the power storage device 1434 as an auxiliary power supply, the power utilization rate during the day can be kept low. It can be suppressed low.

[0373] Furthermore, an example of a moving body, which is an example of an electric device, will be described with reference to FIG. 24.

[0374] The power storage device described in the previous embodiment can be used as a power storage device for control. The power storage device for control can be charged by external power supply by plug-in technology or non-contact power feeding. In addition, when the moving body is an electric railway vehicle, it can be charged by power supply from an overhead wire or a conductive rail.

[0375] FIGS. 24(A) and 24(B) show an example of an electric vehicle capable of receiving power supply from a power supply device 1590. In the electric vehicle 1580, a power storage device 1581 according to an aspect of the present invention is mounted. Power is supplied to the power storage device 1581 from the power supply device 1590, and the power of the power storage device 1581 is adjusted in output by a control circuit 1582 and supplied to a drive device 1583. The control circuit 1582 is controlled by a processing device 1584 having ROM, RAM, CPU, etc. (not shown). The drive device 1583 is configured by combining a DC motor or an AC motor alone, or a motor and an internal combustion engine. The processing device 1584 outputs a control signal to the control circuit 1582 based on input information such as operation information (acceleration, deceleration, stop, etc.) of the driver of the electric vehicle 1580 and information during traveling (information such as uphill and downhill, load information applied to the drive wheels, etc.). The control circuit 1582 adjusts the electric energy supplied from the power storage device 1581 according to the control signal of the processing device 1584 and controls the output of the drive device 1583. When an AC motor is mounted, although not shown, an inverter for converting DC to AC is also built in.

[0376] The drive device 1583 is configured by combining a DC motor or an AC motor alone, or a motor and an internal combustion engine. (Acceleration, deceleration, stop, etc.) and information during traveling (information such as uphill and downhill, load information applied to the drive wheels, etc.). Based on the input information, a control signal is output to the control circuit 1582. The control circuit 1 582 adjusts the electric energy supplied from the power storage device 1581 according to the control signal of the processing device 1584 and controls the output of the drive device 1583. When an AC motor is mounted although not shown, an inverter for converting DC to AC is also built in.

[0377] The power storage device 1581 can be charged by power supply from the power supply device 1590. The charging can be performed by converting it into a DC constant voltage having a constant voltage value via a conversion device such as an AC / DC converter. By mounting the power storage device according to one aspect of the present invention as the power storage device 1581, it is possible to contribute to increasing the capacity of the battery and the like, and to improve convenience.

[0378] As the power supply device described with reference to FIGS. 20 to 24, for example, the device 200 shown in Embodiment 1 can be applied.

[0379] As the power storage device described with reference to FIGS. 20 to 24, for example, the device 100 shown in Embodiment 1 can be applied.

[0380] Note that one power supply device 1450 can also supply power to a plurality of power storage devices. For example, the power supply device 1450 transmits a confirmation signal to each electric device using a wireless signal, and can supply power to each electric device in order according to the response signal from the electric device. At this time, each power storage device may have a collision prevention function (anti-collision function) so that each power storage device can respond to the radio wave received from the power supply device 1450 at different timings. For example, when each power storage device has different identification data, since it is possible to select a power storage device that responds based on the identification data, each power storage device can respond at different timings. Therefore, for example, when the power supply device 1450 has a plurality of oscillation circuits, it is also possible to supply power to a plurality of power storage devices in order by controlling each oscillation circuit. Also, it is possible to supply power to each power storage device simultaneously. ​​​​​​​​​​​​​​

[0381] As described above, the power storage device according to one aspect of the present invention can be applied to various electrical devices.

Example

[0382] In this example, an example of the power storage device will be described.

[0383] The power storage device according to this example is a coin-type power storage device.

[0384] In the production of the positive electrode, LiFePO particles with a carbon layer formed on the surface and NMP (N-methyl-pyrrolidone) were stirred and mixed at 2000 rpm for 3 minutes using a kneader. 4 Particles and NMP (N-methyl- Pyrrolidone) were stirred and mixed at 2000 rpm for 3 minutes using a kneader.

[0385] Next, ultrasonic vibration was applied for 3 minutes, and the stirring and mixing at 2000 rpm using a kneader were performed for 1 minute. This process was repeated 5 times.

[0386] Next, graphene oxide was added to the mixture, and stirring and mixing at 2000 rpm for 2 minutes using a kneader were performed 8 times. ·Mixing was performed 8 times.

[0387] Thereafter, pVdF (manufactured by Kureha Chemical Industry Co., Ltd.) was added as a binder, and stirring and mixing at 2000 rpm for 2 minutes using a kneader were performed once. m for 2 minutes were performed once.

[0388] Furthermore, the process of adding NMP and performing stirring and mixing at 2000 rpm for 2 minutes was repeated until the sample reached a viscosity suitable for coating. The process was repeated until the sample reached a viscosity suitable for coating.

[0389] Note that the mixing ratio of LiFePO particles with a carbon layer formed, graphene oxide, and pVdF was 9 4 1.4:0.6:8 (unit: wt%). 1.4:0.6:8 (unit: wt%).

[0390] A slurry was formed by the above process. Further, the slurry was coated onto an aluminum foil with a thickness of 20 μm using a coating device (applicator). At this time, the distance between the coating part of the coating device and the coating surface was set to 230 μm, and the coating speed was set to 10 mm / sec.

[0391] After the above sample was dried with hot air at a temperature of 80 °C for 40 minutes, pressing was performed using a roll press. Furthermore, it was heated at a temperature of 170 °C for 10 hours under a reduced-pressure atmosphere, and pressing was performed again. A positive electrode was fabricated by punching out a part of the obtained electrode. Note that the temperature of the roll of the press was set to 120 °C, and pressing was performed under the condition that the thickness of the positive electrode decreased by 20%. In the positive electrode, the thickness of the active material layer is 58 μm, the electrode density is 1.82 g / cm , the loading amount of LiFeP O 3 is about 9.7 mg / cm O 4 , and the single-electrode theoretical capacity is about 1.6 mAh / cm 2 . 2 There is.

[0392] The LiFePO 4 particles with a carbon layer formed on the surface are made of a material prepared using a solid-phase method. In the preparation of LiFePO 4 particles with a carbon layer formed on the surface, in a dry room environment (dew point -55 °C to -70 °C), raw materials such as Li CO 2 :FeC 3 O 2 ·2H 4 O: 2 NH H 4 PO 2 were weighed so that the molar ratio became 2:1:1. 4

[0393] Next, these were mixed and pulverized using a ball mill. The ball mill is a planetary rotation type ball mill. ​​​​A mill, using a 500 ml zirconia pot and a 300 g zirconia ball with a diameter of 3 mm, was used to process 150 g of the above raw materials at a rotational speed of 300 rpm for 2 hours. For mixing and grinding, 250 ml of acetone (manufactured by Kanto Chemical Co., Inc., containing 0.0 068% water based on the whole) was used as a solvent.

[0394] Next, in a dry room environment, using a hot plate, drying was carried out at 50 °C for 1 hour or more and 2 hours or less.

[0395] Thereafter, in the above dry room environment, using a vacuum dryer, drying was carried out in a vacuum of 0.1 MPa at 80 °C for 2 hours.

[0396] Next, using a muffle furnace, firing was carried out at 350 °C for 10 hours. At this time, the N 2 flow rate is 5 l / min.

[0397] Next, 10 wt% of glucose was weighed for the fired sample, and the fired sample and glucose were mixed and ground using a ball mill. Here, mixing and grinding were carried out using the same apparatus and method as in the above mixing and grinding process.

[0398] Next, in the above dry room environment, using a hot plate, drying was carried out at 50 °C for 1 hour or more and 2 hours or less.

[0399] Thereafter, in the above dry room environment, using a vacuum dryer, drying was carried out in a vacuum of 0.1 MPa at 80 °C for 2 hours.

[0400] Next, using a muffle furnace, firing was carried out at 600 °C for 10 hours.

[0401] Subsequently, in the above dry room environment, the aggregated active material particles were crushed using a ball mill. This crushing process was carried out under the same conditions as the above-mentioned mixing and grinding of the raw materials, except that the rotation speed was 20 0 rpm and the treatment time was 30 minutes.

[0402] Next, in the above dry room environment, drying was carried out at 50 °C for 1 hour or more and 2 hours or less using a hot plate.

[0403] Subsequently, in the above dry room environment, drying was carried out in a vacuum dryer at 0.1 MPa in a vacuum at a temperature of 17 5 °C for 2 hours.

[0404] Through the above steps, LiFePO particles with a carbon layer formed on the surface were produced. 4 The obtained LiFePO 4 primary particle diameter was 50 nm or more and 300 nm or less, and the secondary particle diameter was 2 μm or less.

[0405] Graphene oxide is a material produced using the Hummers method. In the production of graphene oxide, graphite, KMO and sulfuric acid are mixed to oxidize the graphite. Further 4 after washing with hydrochloric acid, it is dispersed in water and a part of the graphite is exfoliated using an ultrasonic cleaner. After that, the hydrochloric acid is removed, and water is removed using an evaporator and ethanol under reduced pressure. Further the obtained sample is crushed and dried using a dancing mill. Through the above steps, graphene oxide was produced. In the production of the negative electrode, MCMB with a silicon oxide layer formed on the surface of the particles, NMP, and pVdF were stirred and mixed at 2000 rpm for 5 minutes using a kneader. Note that with respect to MCMB

[0406] In the production of the negative electrode, MCMB with a silicon oxide layer formed on the surface of the particles, NMP, and pVdF were stirred and mixed at 2000 rpm for 5 minutes using a kneader. Note that with respect to MCMB The weight ratio of pVdF was set to 10 wt% (weight percent).

[0407] Furthermore, a step of adding NMP and stirring and mixing at 2000 rpm for 5 minutes was repeated until the sample reached a viscosity suitable for coating.

[0408] A slurry was formed through the above steps. Furthermore, the slurry was coated onto a copper foil with a thickness of 18 μm using a coating device (applicator). At this time, the distance between the coating part of the coating device and the coating surface was set to 230 μm, and the coating speed was set to 10 mm / sec.

[0409] After the above sample was dried with hot air at a temperature of 70 °C for 40 minutes, pressing was performed using a roll press. Furthermore, heating was performed at a temperature of 170 °C for 10 hours under a reduced-pressure atmosphere, and pressing was performed again. A negative electrode was fabricated by punching out a part of the obtained electrode. Note that the temperature of the roll of the press was set to 120 °C, and pressing was performed under the condition that the thickness of the positive electrode decreased by 20%. Note that in the negative electrode, the thickness of the active material layer was 89 μm, the electrode density was 1.42 g / cm 3 and the loading amount of MCMB was about 11.4 mg / cm 2 and the single-electrode theoretical capacity was about 4.2 mAh / cm 2

[0410] MCMB particles with a silicon oxide layer formed are materials produced using the sol-gel method. In the production of MCMB particles with a silicon oxide layer formed, silicon ethoxide, hydrochloric acid, and toluene were added and stirred to prepare a toluene solution of Si(OEt) 4 At this time, the amount of silicon ethoxide was determined so that the ratio of silicon oxide to be generated later would be 1 wt% (weight percent) with respect to MCMB. The mixing ratio of this solution was Si(OEt) ​​​​​​​​​​​​​4 was 3.14×10 ―4 mol, 1N hydrochloric acid was 2.91×10 ―4 mol, and toluene was 2 ml.

[0411] Next, in the above dry room environment, Si(OEt) 4 in the toluene solution, MCMB with an average particle size of 9 μm was added and stirred. After that, in a humid environment, the solution was maintained at 70 °C for 3 hours was maintained.

[0412] Next, using a muffle furnace, firing was performed at 500 °C for 3 hours in a nitrogen atmosphere.

[0413] Thereafter, by crushing the aggregated active material particles in a mortar, M CMB particles with a silicon oxide layer formed were produced.

[0414] Furthermore, using the above positive and negative electrodes, a coin-type cell of CR2032 type (diameter 20 mm, height 3.2 mm ) was produced. At this time, as the separator, polypyrene with a thickness of 25 μm was used. Also, as the electrolyte, ethylene carbonate (EC) and diethyl carbonate (DEC) were mixed at a volume ratio of 3:7, and lithium hexafluorophosphate was dissolved in the mixed solution at a concentration of 1 mol / liter to prepare an electrolyte and used. lithium (LiPF 6 ) was used.

[0415] Furthermore, the charge-discharge capacity of the produced coin-type cell was evaluated. In the evaluation, a constant current charge-discharge device ( TOSCAT-3100 manufactured by Toyo System) was used, the environmental temperature was 25 °C, the charge-discharge rate was 0 .2C (34 mA / g), the upper limit voltage was 4.0 V, and the lower limit voltage was 2.0 V to perform a charge-discharge test on the coin-type cell.

[0416] The results of the charge and discharge tests are shown in Fig. 25. Fig. 25 shows the capacity (mAh / g) on the horizontal axis and the voltage (V) on the vertical axis. Note that the number of samples for the charge and discharge evaluation is 3, and the respective results are shown by solid lines, dashed lines, and dotted lines.

[0417] From Fig. 25, it can be seen that the maximum values of the charge capacity and the discharge capacity of any of the samples are about 120 mAh / g. Therefore, it was confirmed that a power storage device can be configured using the above positive electrode and negative electrode.

Explanation of Signs

[0418] 100 Device 110 Data 111 Power storage body 113 Circuit 114 Antenna 115 Circuit 116 Circuit 118 Antenna 119 Circuit 121 Circuit 131 Transistor 132 Transistor 141 Circuit 142 Circuit 143 Load 150 Transistor 170 Transistor 191 Circuit 192 Interface 193 Circuit 194 Circuit 200 Device 211 Circuit 212 Antenna 213 Circuit 214 Circuit 215 Circuit 221 Circuit 222 Circuit 223 Antenna 230 Circuit 231 Circuit 235 Sensor ​240 External power supply 400 Memory cell 411 Transistor 412 Transistor 413 Capacitive element 631 Transistor 632 Capacitive element 633 Transistor 634 Transistor 635 Transistor 636 Inverter 637 Capacitive element 651 Memory circuit 652 Memory circuit 653 Selector 654 Selector 701 Unit 702 Unit 703 Unit 704 Unit 710 Processor 711 Bus bridge 712 Memory 713 Memory interface 715 Clock generation circuit 720 Controller 721 Controller 722 I / O interface 730 Power gate unit 731 Switch 732 Switch 740 Clock generation circuit 741 Crystal oscillation circuit 742 Oscillator 743 Crystal resonator 745 Timer circuit 746 I / O interface 750 I / O port 751 Comparator 752 I / O interface 761 Bus line 762 Bus line 763 Bus line 764 Data bus line 770 Connection Terminal 771 Connection Terminal 772 Connection Terminal 773 Connection Terminal 774 Connection Terminal 775 Connection Terminal 776 Connection Terminal 780 Register 783 Register 784 Register 785 Register 786 Register 787 Register 801 Transistor 802 Transistor 803 Terminal Section 811a Conductive Layer 811b Conductive Layer 811c Conductive Layer 813 Oxide Semiconductor Layer 814 Insulating Layer 815a Conductive Layer 815b Conductive Layer 815c Conductive Layer 816 Insulating Layer 818 Conductive Layer 821 Wiring Layer 822 Wiring Layer 823 Wiring Layer 824 Wiring Layer 825 Wiring Layer 826 Wiring Layer 831a Wiring Layer 831b Wiring Layer 832a Wiring Layer 832b Wiring Layer 833a Wiring Layer 833b Wiring Layer 834a Wiring Layer 834b Wiring Layer 835a Wiring Layer 835b Wiring Layer 836a Wiring Layer 836b Wiring Layer 837a Wiring Layer 837b Wiring Layer 838a Wiring Layer 838b Wiring Layer 900 Circuit board 910 Label 911 Terminal 912 Circuit 913 Power storage element 914 Antenna 915 Antenna 916 Layer 917 Layer 918 Antenna 919 Terminal 920 Display device 921 Sensor 922 Terminal 930 Housing 931 Negative electrode 932 Positive electrode 933 Separator 951 Terminal 952 Terminal 961 Negative electrode current collector 962 Negative electrode active material layer 973 Negative electrode active material 974 Conductive assistant 975 Graphene 981 Positive electrode current collector 982 Positive electrode active material layer 983 Positive electrode active material 984 Graphene 991 Positive electrode current collector 992 Positive electrode active material layer 993 Positive electrode 994 Negative electrode current collector 995 Negative electrode active material layer 996 Negative electrode 997 Separator 998 Electrolyte solution 999 Exterior body 1100 Mobile terminal 1111 Housing 1112 Display section 1113 Power storage device 1114 Power switch 1121 Terminal 1122 Terminal 1131 Wireless communication circuit 1132 Analog baseband circuit 1133 Digital Baseband Circuit 1134 Power Storage Device 1135 Power Supply Circuit 1136 Application Processor 1137 CPU 1141 Display Controller 1142 Memory 1143 Display 1144 Display Unit 1145 Source Driver 1146 Gate Driver 1148 Keyboard 1149 Touch Sensor 1211 Housing 1212 Tip Tool 1214 Trigger Switch 1215 Handle Part 1216 Power Storage Device 1217 Detachable Control Switch 1221 Housing 1222 Blade 1224 Trigger Switch 1225 Handle Part 1226 Power Storage Device 1227 Detachable Control Switch 1300 Power Feeding Device 1311 Antenna 1312 Antenna 1400 Display Device 1401 Housing 1402 Display Unit 1403 Speaker Unit 1404 Power Storage Device 1410 Lighting Device 1411 Housing 1412 Light Source 1413 Power Storage Device 1414 Ceiling 1415 Side Wall 1416 Floor 1417 Window 1420 Indoor Unit 1421 Housing 1422 Air Outlet 1423 Energy storage device 1424 Outdoor unit 1430 Electric refrigerator-freezer 1431 Housing 1432 Refrigerator door 1433 Freezer door 1434 Energy storage device 1440 Clock 1441 Energy storage device 1450 Power supply device 1580 Electric vehicle 1581 Energy storage device 1582 Control circuit 1583 Driving device 1584 Processing device 1590 Power supply device

Claims

[Claim 1] a receiving circuit having an antenna; A storage battery; A transistor; A control circuit, the power receiving circuit is electrically connected to one of the source and the drain of the transistor; the power storage body is electrically connected to the other of the source and drain of the transistor; a gate of the transistor electrically connected to the control circuit; The control circuit is electrically connected to the power storage unit, the transistor includes an oxide semiconductor layer, a first conductive layer provided above the oxide semiconductor layer and overlapping with the oxide semiconductor layer, and a second conductive layer provided below the oxide semiconductor layer and having a region overlapping with the oxide semiconductor layer.

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