Semiconductor device

Abstract

To provide a semiconductor device that can be miniaturized.SOLUTION: A semiconductor device A1 includes a first semiconductor element 1, a first lead 2, a second lead 3 conductively joined to a second electrode 12, and a sealing resin 4. The first element body 10 includes a first inclined surface portion 101. The first lead 2 includes a first joint portion 21 conductively joined to a first electrode 11, a first terminal portion 22 having a first terminal surface 221 located on the second side z2 in the first direction with respect to the first joint portion 21 and a first side x1 in the second direction x perpendicular to the first direction z and exposed from the sealing resin 4 to the second side z2 in the first direction z, an extension portion 23 extending to the first side x1 in the second direction x with respect to the first joint portion 21, and a connecting portion 24 connected to the first terminal portion 22 and the extension portion 23. The second lead 3 has a second terminal surface 31 exposed from the sealing resin 4 to the second side z2 in the first direction z.SELECTED DRAWING: Figure 6

Description

Technical Field

[0001] The present disclosure relates to a semiconductor device.

Background Art

[0002] Patent Document 1 discloses an example of a conventional semiconductor device. The semiconductor device disclosed in this document includes a semiconductor element, leads, connection leads, and a sealing resin. The connection leads are conductively joined to the semiconductor element. The connection leads are bent so as to be separated from the semiconductor element in the thickness direction.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

[0004] [Summary] The sealing resin covers the bent connection leads. For this reason, the dimensional size of the semiconductor device in the thickness direction is increased.

[0005] The present disclosure has been conceived under the above circumstances, and an object thereof is to provide a semiconductor device capable of achieving miniaturization.

[0006] The semiconductor device provided by the present disclosure includes a first semiconductor element having a first element body, a first electrode located on a first side in a first direction, and a second electrode located on a second side in the first direction, a first lead conductively joined to the first electrode by a conductive joining material, a second lead conductively joined to the second electrode, the first semiconductor element, and a part of each of the first lead and the second lead, and a sealing resin covering them. The first element body is a part where the cross-sectional area perpendicular to the first direction becomes smaller as it is located closer to the first side in the first direction, and includes a first inclined surface portion surrounding the first electrode when viewed in the first direction. The first lead includes a first joint portion conductively joined to the first electrode, a first terminal portion located on a first side in a second direction that is the second side in the first direction with respect to the first joint portion and perpendicular to the first direction and exposed from the sealing resin to the second side in the first direction, an extending portion extending to the x1 side in the second direction with respect to the first joint portion, and a connecting portion connecting the first terminal portion and the extending portion. The second lead has a second terminal surface exposed from the sealing resin to the second side in the first direction.

[0007] Other features and advantages of the present disclosure will become clearer from the following detailed description with reference to the accompanying drawings.

Brief Description of the Drawings

[0008]

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[0009] [Detailed Description] Hereinafter, preferred embodiments of the present disclosure will be specifically described with reference to the drawings.

[0010] In the present disclosure, terms such as "first", "second", "third", etc. are used only for identification purposes and are not intended to assign an order to those objects.

[0011] In the present disclosure, "a certain object A is formed on a certain object B" and "a certain object A is formed above a certain object B" include, unless otherwise specified, "a certain object A is directly formed on a certain object B" and "a certain object A is formed on a certain object B with another object intervening between the certain object A and the certain object B". Similarly, "a certain object A is arranged on a certain object B" and "a certain object A is arranged above a certain object B" include, unless otherwise specified, "a certain object A is directly arranged on a certain object B" and "a certain object A is arranged on a certain object B with another object intervening between the certain object A and the certain object B". Similarly, "a certain object A is located above a certain object B" includes, unless otherwise specified, "a certain object A is in contact with a certain object B and a certain object A is located above a certain object B" and "a certain object A is located above a certain object B with another object intervening between the certain object A and the certain object B". Further, "a certain object A overlaps a certain object B when viewed in a certain direction" includes, unless otherwise specified, "a certain object A completely overlaps a certain object B" and "a certain object A partially overlaps a certain object B". Also, in the present disclosure, "a certain surface A faces a direction B (one side or the other side)" is not limited to the case where the angle of the surface A with respect to the direction B is 90°, and includes the case where the surface A is inclined with respect to the direction B.

[0012] FIGS. 1 to 8 show a semiconductor device according to the first embodiment of the present disclosure. The semiconductor device A1 of the present embodiment includes a first semiconductor element 1, a first lead 2, a second lead 3, and a sealing resin 4.

[0013] FIG. 1 is a perspective view showing a semiconductor device A1. FIG. 2 is a plan view showing the semiconductor device A1. FIG. 3 is a front view showing the semiconductor device A1. FIG. 4 is a bottom view showing the semiconductor device A1. FIG. 5 is a right side view showing the semiconductor device A1. FIG. 6 is a cross-sectional view taken along line VI-VI of FIG. 2. FIG. 7 is a cross-sectional view taken along line VII-VII of FIG. 2. FIG. 8 is a partial bottom view showing the first lead 2 of the semiconductor device A1.

[0014] In these figures, one side of the first direction z is defined as the first side z1, and the other side is defined as the second side z2. A direction orthogonal to the first direction z is defined as the second direction x. One side of the second direction x is defined as the first side x1, and the other side is defined as the second side x2. A direction orthogonal to the first direction z and the second direction x is defined as the third direction y. One side of the third direction y is defined as the first side y1, and the other side is defined as the second side y2.

[0015] The size of the semiconductor device A1 is not limited in any way. By way of example, the dimension in the first direction z may be 0.90 mm or more and 1.00 mm or less, the dimension in the second direction x may be 2.30 mm or more and 2.70 mm or less, and the dimension in the third direction y may be 1.20 mm or more and 1.40 mm or less.

[0016] The first semiconductor element 1 is an element that exhibits the electrical function of the semiconductor device A1. The type of the first semiconductor element 1 is not particularly limited. In the present embodiment, the first semiconductor element 1 may be a diode. The first semiconductor element 1 has a first element body 10, a first electrode 11, and a second electrode 12. The size and shape of the first semiconductor element 1 are not limited in any way. For example, when viewed in the first direction z, it is a rectangular shape with a side length of 0.24 mm or more and 0.28 mm or less.

[0017] The first element body 10 is, for example, a rectangular plate shape when viewed in the first direction z. The first element body 10 contains a semiconductor material. The semiconductor material is not limited in any way and is, for example, Si (silicon), SiC (silicon carbide), and GaN (gallium nitride). In the present embodiment, the first element body 10 contains Si (silicon).

[0018] The first electrode 11 is located on the first side z1 in the first direction z of the first element body 10. The second electrode 12 is located on the second side z2 in the first direction z of the first element body 10. In the present embodiment, the first electrode 11 may be an anode electrode, and the second electrode 12 may be a cathode electrode.

[0019] As shown in FIGS. 1 to 3 and FIGS. 5 to 7, the first element body 10 has a first inclined surface portion 101. The first inclined surface portion 101 is a portion where the cross-sectional area perpendicular to the first direction z becomes smaller as it is located closer to the first side z1 in the first direction z. The first inclined surface portion 101 surrounds the first electrode 11 when viewed in the first direction z. In the illustrated example, the first inclined surface portion 101 includes a concave curved surface. The first semiconductor element 1 having the first inclined surface portion 101 may be referred to as a mesa-type diode.

[0020] The first lead 2 is electrically connected to the first electrode 11 and may function as an anode terminal in the present embodiment. The first lead 2 may include a metal such as Cu (copper), Ni (nickel), Fe (iron), or an alloy thereof. The first lead 2 may be entirely composed of only one member or may be composed of a plurality of members. In the illustrated example, the first lead 2 is composed of only one plate-like member. The thickness of the first lead 2 is, for example, 0.14 mm or more and 0.16 mm or less. As shown in FIGS. 1 to 8, the first lead 2 includes a first joint portion 21, a first terminal portion 22, an extending portion 23, and a connecting portion 24.

[0021] The first joint portion 21 is a portion electrically connected to the first electrode 11. In the illustrated example, the first joint portion 21 is a flat plate-like portion along the second direction x and the third direction y. In the present embodiment, the first joint portion 21 is electrically connected to the first electrode 11 by a conductive bonding material 19. The conductive bonding material 19 may be, for example, solder, silver paste, and sintered silver bonding material. In the present embodiment, the conductive bonding material 19 is solder.

[0022] The first terminal portion 22 is located on the second side z2 in the first direction z with respect to the first joint portion 21 and on the first side x1 in the second direction x. In the illustrated example, the first terminal portion 22 is a flat plate-like portion along the second direction x and the third direction y.

[0023] The first terminal portion 22 has a first terminal surface 221. The first terminal surface 221 is exposed on the second side z2 in the first direction z from the encapsulating resin 4 and can be used as a mounting terminal when mounting the semiconductor device A1 on a mounting substrate (not shown) or the like. The first terminal surface 221 is located on the second side z2 in the first direction z from the first semiconductor element 1. The first terminal portion 22 may be located on the second side z2 in the first direction z from the first semiconductor element 1.

[0024] A first metal layer 29 may be provided at a portion of the first terminal portion 22 that is exposed from the encapsulating resin 4. The first metal layer 29 is a layer containing a metal such as Sn (tin), Ni (nickel), or an alloy thereof, and is formed, for example, by plating.

[0025] As shown in FIGS. 1 to 5, the first terminal portion 22 may have a first thin portion 225. The first thin portion 225 is located on the first side z1 in the first direction z from the first terminal surface 221 and has a smaller thickness in the first direction z than other portions of the first terminal portion 22. In the illustrated example, the first terminal portion 22 has two first thin portions 225. The two first thin portions 225 are located apart from each other on both sides in the third direction y of the first terminal portion 22.

[0026] The extending portion 23 is a portion that extends to the first side x1 in the second direction x with respect to the first joint portion 21. As shown in FIG. 6, when viewed in the third direction y, the extending portion 23 has the same position in the first direction z as the portion of the first joint portion 21 that is located on the most first side z1 in the first direction z, and a portion that is located on the second side z2 with respect to the portion of the first joint portion 21 that is located on the most first side z1 in the first direction z. That is, the extending portion 23 does not protrude to the first side z1 in the first direction z from the first joint portion 21. In the illustrated example, the extending portion 23 is a flat plate-like portion along the second direction x and the third direction y as a whole. As in the illustrated example, the extending portion 23 may be configured such that all of it overlaps the first joint portion 21 when viewed in the second direction x.

[0027] The extending portion 23 may have a recess 231. The recess 231 is recessed on the first side z1 in the first direction z. The number, specific shape, size, etc. of the recess 231 are not limited at all. The recess 231 may be located on the first side x1 in the second direction x with respect to the first electrode 11 and the conductive bonding material 19. A part of the conductive bonding material 19 may be located within the recess 231.

[0028] As shown in FIG. 8, in the illustrated example, the recess 231 has a shape extending in the third direction y, for example, a groove shape. The cross-sectional shape of the recess 231 perpendicular to the third direction y is not limited at all, and in the illustrated example, it may be V-shaped. Such a recess 231 can be formed, for example, by pressing a mold against a metal plate member that becomes the material of the first lead 2. The recess 231 may be in contact with both ends of the extending portion 23 in the third direction y. That is, the dimension of the recess 231 in the third direction y may be the same as the dimension of the extending portion 23 in the third direction y.

[0029] As shown in FIG. 6, in the illustrated example, at least a part of the recess 231 overlaps the first inclined surface 101 when viewed in the first direction z. The recess 231 may entirely overlap the first inclined surface 101 when viewed in the first direction z.

[0030] The connecting portion 24 is connected to the first terminal portion 22 and the extending portion 23. The specific shape of the connecting portion 24 is not limited at all, and it may be a shape inclined with respect to the first direction z as shown in FIG. 6. The connecting portion 24 may have, for example, a through hole 241. The through hole 241 penetrates the connecting portion 24.

[0031] The second lead 3 is electrically connected to the second electrode 12, and in this embodiment, it is electrically connected and joined to the second electrode 12 by the conductive bonding material 19. In this embodiment, the second lead 3 can function as a cathode terminal. The second lead 3 may contain, for example, a metal such as Cu (copper), Ni (nickel), Fe (iron), or an alloy thereof. The second lead 3 may be entirely composed of only one member, or may be composed of a plurality of members. In the illustrated example, the second lead 3 is composed of only one plate-like member. The thickness of the second lead 3 is, for example, 0.14 mm or more and 0.16 mm or less. The thickness of the second lead 3 may be the same as or different from the thickness of the first lead 2. In the illustrated example, the second lead 3 is a flat plate-like member along the second direction x and the third direction y as a whole.

[0032] As shown in FIGS. 4, 6, and 7, the second lead 3 includes a second terminal surface 31. The second terminal surface 31 is exposed from the sealing resin 4 to the second side z2 in the first direction z, and can be used as a mounting terminal when mounting the semiconductor device A1 on a mounting substrate (not shown) or the like. The second terminal surface 31 may be in the same position as the first terminal surface 221 in the first direction z.

[0033] A second metal layer 39 may be provided at a portion of the second lead 3 that is exposed from the sealing resin 4. The second metal layer 39 is, for example, a layer containing a metal such as Sn (tin), Ni (nickel), or an alloy thereof, and is formed, for example, by plating.

[0034] As shown in FIGS. 1 to 4, FIG. 6 and FIG. 7, the second lead 3 may have a second thin portion 35. The second thin portion 35 is located on the first side z1 in the first direction z from the second terminal surface 31, and has a smaller thickness in the first direction z than other portions of the second lead 3. In the illustrated example, the second lead 3 has one second thin portion 35. As shown in FIG. 4, this second thin portion 35 may be located on both sides of the first side x1 in the second direction x and the third direction y of the second terminal surface 31 when viewed in the first direction z.

[0035] The second lead 3 may have a groove portion 33. The groove portion 33 is recessed on the second side z2 in the first direction z and has a shape extending in the third direction y. The groove portion 33 is located on the second side x2 in the second direction x with respect to the first semiconductor element 1. In the illustrated example, the second lead 3 may have two groove portions 33. The two groove portions 33 are arranged side by side in the second direction x.

[0036] The encapsulating resin 4 covers the first semiconductor element 1 and parts of the first lead 2 and the second lead 3. The encapsulating resin 4 contains an insulating resin, for example, an epoxy resin.

[0037] The encapsulating resin 4 has a first resin surface 41, a second resin surface 42, a third resin surface 43, a fourth resin surface 44, a fifth resin surface 45 and a sixth resin surface 46. The first resin surface 41 is a surface facing the first side z1 in the first direction z. The second resin surface 42 is a surface facing the second side z2 in the first direction z. The third resin surface 43 is a surface facing the first side x1 in the second direction x. The fourth resin surface 44 is a surface facing the second side x2 in the second direction x. The fifth resin surface 45 is a surface facing the first side y1 in the third direction y. The sixth resin surface 46 is a surface facing the second side y2 in the third direction y.

[0038] The first resin surface 41 and the second resin surface 42 may be surfaces orthogonal to the first direction z, or may be surfaces inclined with respect to the first direction z. The third resin surface 43 and the fourth resin surface 44 may be surfaces orthogonal to the second direction x, or may be surfaces inclined with respect to the first direction z. The fifth resin surface 45 and the sixth resin surface 46 may be surfaces orthogonal to the third direction y, or may be surfaces inclined with respect to the first direction z. The first resin surface 41, the second resin surface 42, the third resin surface 43, the fourth resin surface 44, the fifth resin surface 45, and the sixth resin surface 46 can be various surfaces such as a flat surface, a bending surface, and a curved surface.

[0039] In the present embodiment, the first terminal surface 221 and the second terminal surface 31 are exposed from the second resin surface 42 to the second side z2 in the first direction z. When the first metal layer 29 and the second metal layer 39 are provided, the first terminal surface 221 and the second terminal surface 31 may be configured such that the first metal layer 29 and the second metal layer 39 protrude from the second resin surface 42 to the second side z2 in the first direction z.

[0040] The first terminal portion 22 may protrude from the third resin surface 43 to the first side x1 in the second direction x. The second lead 3 may protrude from the fourth resin surface 44 to the second side x2 in the second direction x.

[0041] Next, the operation of the semiconductor device A1 will be described.

[0042] According to the present embodiment, the extending portion 23 is a portion that extends to the first side x1 in the second direction x with respect to the first joint portion 21. The extending portion 23 does not protrude to the first side z1 in the first direction z from the first joint portion 21. Therefore, it is possible to reduce the size of the sealing resin 4 covering the first lead 2 in the first direction z, and the semiconductor device A1 can be miniaturized. Since the first semiconductor element 1 has the first inclined surface portion 101, mechanical interference or unintentional short circuit between the first element body 10 and the extending portion 23 can be avoided.

[0043] Since the extending portion 23 has the recess 231, it is possible to prevent the molten conductive bonding material 19 from unintentionally spreading from the first joint portion 21 to the extending portion 23 in the manufacturing method of the semiconductor device A1.

[0044] Since the recess 231 overlaps with the first inclined surface portion 101 when viewed in the first direction z, it is possible to avoid the dimension of the first lead 2 in the second direction x from becoming excessively large by providing the recess 231. When the recess 231 overlaps with the first inclined surface portion 101 when viewed in the first direction z, the recess 231 is closer to the first electrode 11. Therefore, the molten conductive bonding material 19 can be retained in a region closer to the first electrode 11.

[0045] Since the through hole 241 is provided in the connecting portion 24, it is possible to smoothly spread the liquid resin material in the mold when forming the sealing resin 4.

[0046] The first thin portion 225 and the second thin portion 35 can enhance the bonding force between the first lead 2 and the second lead 3 and the sealing resin 4. The groove portion 33 can prevent the conductive bonding material 19 from spreading excessively from the second electrode 12.

[0047] Figs. 9 to 21 show modified examples and other embodiments of the present disclosure. In these figures, the same or similar elements as those in the above embodiment are denoted by the same reference numerals as those in the above embodiment. Also, the configurations of the respective parts in each modified example and each embodiment can be appropriately combined with each other within a range that does not cause a technical contradiction.

[0048] Figs. 9 to 16 show other examples of the recess 231 of the extending portion 23.

[0049] In the example shown in Fig. 9, the recess 231 is a groove extending in the third direction y and does not contact both ends of the extending portion 23 in the third direction y. That is, the dimension of the recess 231 in the third direction y is smaller than the dimension of the extending portion 23 in the third direction y.

[0050] In the example shown in FIG. 10, the extending portion 23 has two recesses 231. The two recesses 231 both extend in the third direction y and are groove-shaped. The two recesses 231 are arranged side by side in the second direction x.

[0051] According to such an example, in the method for manufacturing the semiconductor device A1, it is possible to more reliably prevent the molten conductive bonding material 19 from unintentionally spreading from the first joint portion 21 to the first side x1 in the second direction x.

[0052] In the example shown in FIG. 11, the cross-sectional shape of the recess 231 perpendicular to the third direction y is a curved shape. Such a recess 231 can be formed, for example, by etching a metal member that becomes the material of the first lead 2.

[0053] In the examples shown in FIGS. 12 and 13, the extending portion 23 has a plurality of recesses 231. The plurality of recesses 231 are arranged side by side in the third direction y. Also with such a configuration, in the method for manufacturing the semiconductor device A1, it is possible to achieve the effect of preventing the molten conductive bonding material 19 from unintentionally spreading from the first joint portion 21 to the first side x1 in the second direction x.

[0054] In the example shown in FIG. 14, the extending portion 23 has a plurality of recesses 231. The arrangement of the plurality of recesses 231 is an arrangement in a plurality of rows. Also, in the illustrated example, the arrangement of the plurality of recesses 231 may be a so-called staggered arrangement. According to such an example, compared with an arrangement in a single row, it is possible to more reliably prevent the molten conductive bonding material 19 from spreading.

[0055] In the examples shown in FIGS. 15 and 16, the extending portion 23 has a plurality of recesses 231. The cross-sectional shape of the recess 231 is a two-step shape. As can be understood from this example, the cross-sectional shape of the recess 231 is not limited in any way.

[0056] FIGS. 17 and 18 show a semiconductor device according to the second embodiment of the present disclosure. In the semiconductor device A2 of the present embodiment, the first joint portion 21 has a rough surface portion 211.

[0057] The rough surface portion 211 is provided at a portion of the first joint portion 21 that faces the first electrode 11. The rough surface portion 211 is a portion having a rougher surface roughness than other portions of the first joint portion 21. The rough surface portion 211 can be formed by, for example, laser processing, shot blasting, or the like. The conductive bonding material 19 is in contact with the rough surface portion 211.

[0058] According to the present embodiment, in the method for manufacturing the semiconductor device A2, the melted conductive bonding material 19 spreads along the rough surface portion 211, and the behavior of protruding from the rough surface portion 211 is suppressed. Therefore, it is possible to prevent the conductive bonding material 19 from spreading unintentionally. Further, in the present disclosure, the first lead 2 may have a configuration in which the first joint portion 21 has the rough surface portion 211 and the extending portion 23 has the concave portion 231.

[0059] FIG. 19 shows a semiconductor device according to the third embodiment of the present disclosure. In the semiconductor device A3 of the present embodiment, the first joint portion 21 does not have the above-described rough surface portion 211. Further, the extending portion 23 does not have the above-described concave portion 231.

[0060] According to the present embodiment, miniaturization of the semiconductor device A3 can be achieved. As understood from the present embodiment, the semiconductor device of the present disclosure may have a configuration that does not have both the concave portion 231 and the rough surface portion 211.

[0061] FIGS. 20 and 21 show a semiconductor device according to the fourth embodiment of the present disclosure. The semiconductor device A4 of the present embodiment includes a first semiconductor element 1, a first lead 2, a second lead 3, a sealing resin 4, a second semiconductor element 5, and a third lead 6.

[0062] The second semiconductor element 5 is an element that exhibits the electrical function of the semiconductor device A4. The type of the second semiconductor element 5 is not particularly limited. In the present embodiment, the second semiconductor element 5 may be a diode. The second semiconductor element 5 includes a second element main body 50, a third electrode 51, and a fourth electrode 52. The size and shape of the second semiconductor element 5 are not limited at all. For example, when viewed in the first direction z, it is a rectangular shape with a side length of 0.24 mm or more and 0.28 mm or less. In the illustrated example, the second semiconductor element 5 is located on the first side y1 in the third direction y with respect to the first semiconductor element 1.

[0063] The second element main body 50 is, for example, a rectangular plate shape when viewed in the first direction z. The second element main body 50 contains a semiconductor material. The semiconductor material is not limited at all. For example, it is Si (silicon), SiC (silicon carbide), GaN (gallium nitride), etc. In the present embodiment, the second element main body 50 contains Si (silicon).

[0064] The third electrode 51 is located on the first side z1 in the first direction z of the second element main body 50. The fourth electrode 52 is located on the second side z2 in the first direction z of the second element main body 50. In the present embodiment, the third electrode 51 may be an anode electrode, and the fourth electrode 52 may be a cathode electrode.

[0065] The second element main body 50 has a second inclined surface portion 501. The second inclined surface portion 501 is a portion where the cross-sectional area perpendicular to the first direction z becomes smaller as it is located closer to the first side z1 in the first direction z. The second inclined surface portion 501 surrounds the third electrode 51 when viewed in the first direction z. In the illustrated example, the second inclined surface portion 501 includes a concave curved surface. The second semiconductor element 5 having the second inclined surface portion 501 may be referred to as a mesa-type diode.

[0066] The third lead 6 is electrically connected to the fourth electrode 52, and in this embodiment, it is electrically connected and joined to the fourth electrode 52 by a conductive joining material 59. The conductive joining material 59 may be, for example, solder, silver paste, a sintered silver joining material, etc. In this embodiment, the conductive joining material 59 is solder. In this embodiment, the third lead 6 can function as a cathode terminal. The third lead 6 may contain a metal such as Cu (copper), Ni (nickel), Fe (iron), or an alloy thereof. The third lead 6 may be entirely composed of only one member or may be composed of a plurality of members. In the illustrated example, the third lead 6 is composed of only one plate-like member. The thickness of the third lead 6 is, for example, 0.14 mm or more and 0.16 mm or less. The thickness of the third lead 6 may be the same as or different from the thickness of the second lead 3. In the illustrated example, the third lead 6 is a flat plate-like member along the second direction x and the third direction y as a whole. The third lead 6 may be located on the first side y1 of the third direction y with respect to the second lead 3.

[0067] The third lead 6 includes a third terminal surface 61. The third terminal surface 61 is exposed on the second side z2 in the first direction z from the sealing resin 4 and can be used as a mounting terminal when mounting the semiconductor device A4 on a mounting substrate (not shown) or the like. The third terminal surface 61 may be in the same position as the first terminal surface 221 and the second terminal surface 31 in the first direction z.

[0068] A third metal layer 69 may be provided at a portion of the third lead 6 that is exposed from the sealing resin 4. The third metal layer 69 is a layer containing a metal such as Sn (tin), Ni (nickel), or an alloy thereof, and is formed, for example, by plating.

[0069] The third lead 6 may have a third thin portion 65. The third thin portion 65 is located on the first side z1 in the first direction z from the third terminal surface 61, and has a thickness in the first direction z that is thinner than other portions of the third lead 6. In the illustrated example, the third lead 6 has one third thin portion 65. As shown in FIG. 21, this third thin portion 65 may be located on both sides in the first side x1 in the second direction x and the third direction y of the third terminal surface 61 when viewed in the first direction z.

[0070] The third lead 6 may have a groove portion 63. The groove portion 63 is recessed on the second side z2 in the first direction z and has a shape extending in the third direction y. The groove portion 63 is located on the second side x2 in the second direction x with respect to the second semiconductor element 5. In the illustrated example, the third lead 6 may have two groove portions 63. The two groove portions 63 are arranged side by side in the second direction x.

[0071] The first lead 2 of the present embodiment may have a first joint portion 21, a first terminal portion 22, an extension portion 23, a connection portion 24, and a second joint portion 25.

[0072] The second joint portion 25 is a portion conductively joined to the third electrode 51. In the illustrated example, the second joint portion 25 is a flat plate-shaped portion along the second direction x and the third direction y. In the present embodiment, the second joint portion 25 is conductively joined to the third electrode 51 by a conductive joining material 59. The second joint portion 25 may be located on the first side y1 in the third direction y with respect to the first joint portion 21.

[0073] The extension portion 23 is connected to the first joint portion 21, the second joint portion 25, and the connection portion 24. In FIG. 20, the boundaries between the first joint portion 21, the second joint portion 25, and the extension portion 23 are indicated by dashed-dotted lines.

[0074] The extension portion 23 may include a first portion 23a and a second portion 23b. The first portion 23a is a portion extending in the third direction y connected to the first joint portion 21 and the second joint portion 25. The second portion 23b is a portion extending in the second direction x connected to the first portion 23a and the connection portion 24. In FIG. 20, the boundary between the first portion 23a and the second portion 23b is indicated by a dashed-dotted line.

[0075] As shown in FIG. 21, the extending portion 23 may have two recesses 231. The two recesses 231 are located apart from each other in the third direction y. One recess 231 is close to the first joint portion 21, and the other recess 231 is close to the second joint portion 25.

[0076] According to this embodiment, the semiconductor device A4 can be miniaturized. The first semiconductor element 1 and the second semiconductor element 5 are electrically connected in parallel to each other. Both the first semiconductor element 1 and the second semiconductor element 5 are connected to the first lead 2 and are individually connected to the second lead 3 and the third lead 6. Thereby, the first semiconductor element 1 and the second semiconductor element 5 can be used individually.

[0077] The semiconductor device according to the present disclosure is not limited to the above-described embodiment. The specific configuration of each part of the semiconductor device according to the present disclosure can be freely designed in various ways.

[0078] [Appendix 1] A first semiconductor element (1) having a first element body (10), a first electrode (11) located on a first side (z1) in a first direction (z), and a second electrode (12) located on a second side (z2) in the first direction (z); A first lead (2) conductively joined to the first electrode (11) by a conductive joining material (19); A second lead (3) conductively joined to the second electrode (12); A sealing resin (4) covering the first semiconductor element (1) and parts of the first lead (2) and the second lead (3); The first element body (10) is a portion where the cross-sectional area perpendicular to the first direction (z) becomes smaller as it is located on the first side (z1) in the first direction (z), and includes a first inclined surface portion (101) surrounding the first electrode (11) when viewed in the first direction (z). The first lead (2) includes a first joint portion (21) electrically connected to the first electrode (11), a first terminal portion (22) located on the first side (x1) in the second direction (x) orthogonal to the first direction (z) on the second side in the first direction with respect to the first joint portion (21) and exposed from the sealing resin (4) to the second side (z2) in the first direction (z), an extension portion (23) extending to the first side in the second direction (x) with respect to the first joint portion (21), and a connection portion (24) connected to the first terminal portion (22) and the extension portion (23). The second lead (3) has a second terminal surface (31) exposed from the sealing resin (4) to the second side (z2) in the first direction (z). Semiconductor device (A1). [Appendix 2] The semiconductor device (A1) according to Appendix 1, wherein the extension portion (23) has a recess (231) recessed toward the first side (z1) in the first direction (z). [Appendix 3] The semiconductor device (A1) according to Appendix 2, wherein the recess (231) overlaps the first inclined surface (101) when viewed in the first direction (z). [Appendix 4] The semiconductor device (A1) according to Appendix 2 or 3, wherein the recess (231) has a shape extending in a third direction (y) orthogonal to the first direction (z) and the second direction (x). [Appendix 5] The semiconductor device (A1) according to Appendix 4, wherein the recess (231) contacts both ends of the extension portion (23) in the third direction (y). [Appendix 6] The semiconductor device (A1) according to Appendix 4 or 5, wherein the extension portion (23) includes a plurality of the recesses arranged in the second direction (x). [Appendix 7] The semiconductor device (A1) according to any one of Appendix 4 to 6, wherein a cross-sectional shape of the recess (231) orthogonal to the third direction (y) is V-shaped. [Appendix 8] The semiconductor device (A1) according to any one of Appendix 4 to 6, wherein a cross-sectional shape of the recess (231) orthogonal to the second direction (x) is a curved shape. [Appendix 9] The semiconductor device (A1) according to Appendix 2 or 3, wherein the extending portion (23) has a plurality of the recesses (231) arranged in a third direction (y) orthogonal to the first direction (z) and the second direction (x). [Appendix 10] The semiconductor device (A1) according to any one of Appendices 1 to 9, wherein the first joint portion (21) includes a rough surface portion (211) with which the conductive joint material (19) is in contact. [Appendix 11] The semiconductor device (A1) according to any one of Appendices 1 to 10, wherein the first terminal portion (22) protrudes from the sealing resin (4) on the first side (x1) in the second direction (x). [Appendix 12] The semiconductor device (A1) according to Appendix 11, wherein the second lead (3) protrudes from the sealing resin (4) on the second side (x2) in the second direction (x). [Appendix 13] The semiconductor device (A1) according to any one of Appendices 1 to 12, wherein the first terminal surface (221) and the second terminal surface (31) are at the same position in the first direction (z). [Appendix 14] The semiconductor device (A1) according to any one of Appendices 1 to 13, wherein the connecting portion (24) has a through hole (241). [Appendix 15] A second semiconductor element (5) that is positioned side by side with the first semiconductor element (1) in a third direction (y) orthogonal to the first direction (z) and the second direction (x), and includes a second element body (50), a third electrode (51) positioned on a first side (z1) in the first direction (z), and a fourth electrode (52) positioned on a second side (z2) in the first direction (z), and a third lead (6) conductively joined to the fourth electrode (52). The second element body (50) is a portion where the cross-sectional area is smaller as it is positioned closer to the first side (z1) in the first direction (z), and includes a second inclined surface portion (501) that surrounds the third electrode (51) when viewed in the first direction (z). The third lead (6) has a third terminal surface (61) exposed from the encapsulating resin (4) to the second side (z2) in the first direction (z). The first lead (2) includes a second joint portion (25) conductively joined to the third electrode (51) by a conductive joining material (19). The extending portion (23) is connected to the first joint portion (21) and the second joint portion (25), and is the semiconductor device (A1) described in Appendix 1.

Explanation of symbols

[0079] A1,A2,A3,A4: Semiconductor device 1 : First semiconductor element 2 : First lead 3 : Second lead 4 : Encapsulating resin 5 : Second semiconductor element 6 : Third lead 10 : First element body 11 : First electrode 12 : Second electrode 19 : Conductive joining material 21 : First joint portion 22 : First terminal portion 23 : Extending portion 23a : First part 23b : Second part 24 : Connecting portion 25 : Second joint portion 29 : First metal layer 31 : Second terminal surface 33 : Groove portion 35 : Second thin portion 39 : Second metal layer 41 : First resin surface 42 : Second resin surface 43 : Third resin surface 44 : Fourth resin surface 45 : Fifth resin surface 46 : Sixth resin surface 50 : Second element body 51 : Third electrode 52 : Fourth electrode 59 : Conductive joining material 61: Third terminal surface 63: Groove portion 65: Third thin portion 69: Third metal layer 101: First inclined surface 211: Rough surface 221: First terminal surface 225: First thin portion 231: Concave portion 241: Through hole 501: Second inclined surface x: Second direction x1: First side x2: Second side y: Third direction y1: First side y2: Second side z: First direction z1: First side z2: Second side

Claims

1. A first semiconductor device having a first element body, a first electrode located on a first side in a first direction, and a second electrode located on a second side in the first direction; A first lead conductively joined to the first electrode by a conductive bonding material; A second lead conductively joined to the second electrode; A sealing resin covering the first semiconductor device, and parts of the first lead and the second lead; The first element body has a portion where the cross-sectional area perpendicular to the first direction becomes smaller as it is located closer to the first side in the first direction, and includes a first inclined surface portion surrounding the first electrode when viewed in the first direction; The first lead includes a first joint portion conductively joined to the first electrode, a first terminal portion located on a first side in a second direction perpendicular to the first direction and on the second side in the first direction with respect to the first joint portion and exposed from the sealing resin to the second side in the first direction, an extending portion extending to the first side in the second direction with respect to the first joint portion, and a connecting portion connecting the first terminal portion and the extending portion; The second lead has a second terminal surface exposed from the sealing resin to the second side in the first direction; A semiconductor device.

2. The semiconductor device according to claim 1, wherein the extending portion has a recess recessed toward the first side in the first direction.

3. The semiconductor device according to claim 2, wherein the recess overlaps the first inclined surface portion when viewed in the first direction.

4. The semiconductor device according to claim 2 or 3, wherein the recess extends in a third direction perpendicular to the first direction and the second direction.

5. The semiconductor device according to claim 4, wherein the recess is in contact with both ends of the extending portion in the third direction.

6. The semiconductor device according to claim 4, wherein the extending portion includes a plurality of the recesses arranged in the second direction.

7. The semiconductor device according to claim 4, wherein a cross-sectional shape of the recess perpendicular to the third direction is V-shaped.

8. The semiconductor device according to claim 4, wherein a cross-sectional shape of the recess perpendicular to the second direction is a curved shape.

9. The semiconductor device according to claim 2 or 3, wherein the extending portion has a plurality of the recesses arranged in a third direction perpendicular to the first direction and the second direction.

10. The semiconductor device according to claim 1, wherein the first joint portion includes a rough surface portion with which the conductive bonding material is in contact.

11. The semiconductor device according to claim 1, wherein the first terminal portion protrudes from the encapsulating resin on the first side in the second direction.

12. The semiconductor device according to claim 11, wherein the second lead protrudes from the encapsulating resin on the second side in the second direction.

13. The semiconductor device according to claim 1, wherein the first terminal surface and the second terminal surface are in the same position in the first direction.

14. The semiconductor device according to claim 1, wherein the connecting portion has a through hole.

15. A second semiconductor element that is positioned side by side with the first semiconductor element in a third direction orthogonal to the first direction and the second direction, and includes a second element body, a third electrode positioned on the first side in the first direction, and a fourth electrode positioned on the second side in the first direction; a third lead conductively joined to the fourth electrode; the second element body is a portion where the cross-sectional area perpendicular to the first direction becomes smaller as it is positioned closer to the first side in the first direction, and includes a second inclined surface portion that surrounds the third electrode when viewed in the first direction; the third lead has a third terminal surface exposed from the encapsulating resin on the second side in the first direction; the first lead includes a second joining portion conductively joined to the third electrode by a conductive joining material; The semiconductor device according to claim 1, wherein the extending portion is connected to the first joining portion and the second joining portion.

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