Light emitting device, image forming apparatus, display, photoelectric conversion device, electronic apparatus, illumination device, movable body, and wearable device

Abstract

To provide a technique advantageous for reducing leakage current.SOLUTION: A light emitting device has a plurality of organic EL elements arranged on a substrate, and the light emitting device has an insulating film that, of lower electrodes of the plurality of organic EL elements, insulates from each other lower electrodes adjacent to each other. The insulating film has a groove between the lower electrodes adjacent to each other. A surface of the groove has two wall surfaces that face each other, and a bottom face located between the two wall surfaces. The bottom face includes a convex surface that projects in a direction separating from the substrate, and in a direction in which the two wall surfaces face each other, the width of the convex surface is 1 / 3 or more of the shortest distance between the two wall surfaces.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to a light-emitting device, an image forming device, a display device, a photoelectric conversion device, an electronic device, a lighting device, a moving body, and a wearable device.

Background Art

[0002] In recent years, the pixel density of display devices using organic EL (Electro Luminescence) elements has been increasing. Along with this, a leakage current across pixels is likely to occur through an organic layer provided in common for a plurality of pixels. When a leakage current occurs, for example, a non-light-emitting pixel may slightly emit light due to the influence from a light-emitting pixel, causing color mixing and a decrease in luminous efficiency.

[0003] Patent Document 1 describes that, in order to reduce the leakage current across pixels, by forming grooves in an insulating layer that separates the anode electrodes of organic EL elements, the resistance of the organic layer inside the grooves is made thin.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] Even if grooves are formed in the insulating layer between pixels, in a configuration where the bottom surface of the grooves is flat, the resistance value of the organic layer between pixels does not become sufficiently small, and a leakage current may occur.

[0006] An object of the present invention is to provide a technology advantageous for reducing leakage current.

Means for Solving the Problems

[0007] One aspect of the present invention relates to a light-emitting device having a plurality of organic EL elements disposed on a substrate. The light-emitting device has an insulating film that insulates adjacent lower electrodes among the lower electrodes of the plurality of organic EL elements from each other. The insulating film has a groove between the adjacent lower electrodes. The surface of the groove includes two opposing wall surfaces and a bottom surface located between the two wall surfaces. The bottom surface includes a convex surface protruding in a direction away from the substrate. In a direction in which the two wall surfaces face each other, the width of the convex surface is 1 / 3 or more of the shortest distance between the two wall surfaces.

Advantages of the Invention

[0008] According to the present invention, a technique advantageous for reducing leakage current is provided.

Brief Description of the Drawings

[0009]

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Embodiments for Carrying Out the Invention

[0010] Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. Note that the following embodiments do not limit the invention according to the claims. Although a plurality of features are described in the embodiments, not all of these plurality of features are essential to the invention, and the plurality of features may be arbitrarily combined. Further, in the accompanying drawings, the same or similar configurations are given the same reference numerals, and redundant descriptions are omitted.

[0011] FIG. 1(a) is a schematic cross-sectional view showing one side of the light-emitting device 1 according to an embodiment. FIG. 1(b) is a schematic cross-sectional view showing the other side of the light-emitting device 1 according to an embodiment. The light-emitting device 1 has a plurality of organic EL elements (not shown) disposed on a substrate (not shown). The light-emitting device 1 has an insulating film 120 that insulates adjacent lower electrodes 130 among the lower electrodes 130 of the plurality of organic EL elements from each other. The insulating film 120 has a groove T between adjacent lower electrodes 130. The surface of the groove T may include two opposing wall surfaces WS and a bottom surface BS located between the two wall surfaces WS. The bottom surface BS may include a convex surface CS protruding in a direction away from the substrate (not shown). The convex surface CS has a finite radius of curvature, and the center of curvature is located in a region below the bottom surface BS (on the substrate SUB side). The bottom surface BS may include a non-convex surface NCS between the two wall surfaces WS and the convex surface CS. As schematically shown in FIGS. 1(a) and 1(b), in the direction in which the two wall surfaces WS face each other, the width WC of the convex surface CS is preferably 1 / 3 or more of the shortest distance DT between the two wall surfaces WS. In FIG. 1(a), WC = DT. Alternatively, in the direction in which the two wall surfaces WS face each other, the width WN of the non-convex surface NCS is preferably smaller than the width WC of the convex surface CS. FIG. 1(a) shows an example where WN = 0. The non-convex surface NCS may be, for example, a flat surface. The example schematically shown in FIG. 1(a) may be understood as an example in which the non-convex surface NCS is minimized or an example in which the non-convex surface NSC is removed. The bottom surface BS may be understood to have a convex surface CS in a region including its central portion and a peripheral portion PP outside the central portion.

[0012] As will be described in detail later, the insulating film 120 may be an optical adjustment film. The optical adjustment film may have a thickness corresponding to the color (wavelength range) of the light generated by the pixel. The insulating film 120 is formed, for example, by a plasma CVD method and is, for example, a silicon oxide film. The lower electrode 130 is formed, for example, by a sputtering method and is a transparent electrode such as an indium tin oxide (ITO film) or an indium zinc oxide (IZO film).

[0013] The trench T can be formed by sequentially forming an insulating material film for forming the insulating film 120 and a conductive material film for forming the lower electrode 130, and then processing the conductive material film and the insulating film material film by a photolithography process and a dry etching process. This dry etching process can be carried out under conditions of less etchant. As a result, the etching rate increases because the consumption of the etchant is less closer to the resist mask, and the etching rate decreases because the consumption of the etchant is more farther from the resist mask. As a result, the peripheral portion in the trench T is etched more than the central portion in the trench T, and a trench T having a structure schematically shown in FIGS. 1(a) and 1(b) is obtained. The conditions of less etchant can be obtained by reducing the pressure in the chamber where the dry etching is performed or reducing the flow rate of the etching gas.

[0014] The trench T having the convex surface CS on the bottom surface BS can also be understood as having a structure in which a thin valley V exists in the peripheral portion PP or the non-convex surface NCS on the bottom surface BS. The valley V can be formed along each of the two wall surfaces WS. These valleys V can be regarded as thin concave patterns. These valleys V are advantageous for forming a structure in which at least one organic layer, particularly a light-emitting layer, among the plurality of organic layers formed on the trench T, and a hole injection layer, a hole transport layer, etc. disposed between the light-emitting layer and the insulating film 120 are interrupted or thinned in the valley V. Thereby, the electrical resistance of the organic film between adjacent pixels (organic EL elements) increases, and the leakage current between adjacent pixels is reduced. On the other hand, among the plurality of organic layers, an organic layer closer to the upper electrode, for example, an electron transport layer, an electron injection layer, a charge generation layer, etc. that can be disposed on the light-emitting layer, has better continuity than the organic layer that can be disposed between the light-emitting layer and the insulating film 120, and the interruption can be eliminated or reduced. Also, for the upper electrode, the continuity is improved and the interruption is eliminated.

[0015] It is not easy to form the above-mentioned thin concave pattern by means of a normal photolithography process and a dry etching process. In an organic EL display device, a step structure such as a bank structure can be formed between organic EL elements without using CMP. In such a case where there is such a step structure, for example, an organic layer can be laminated on the step structure to flatten the surface, an insulating film can be formed thereon, and a resist pattern can be formed thereon by a photolithography process. And it may be possible to obtain a thin concave pattern by performing etching using this resist pattern as an etching mask. However, since such a process requires a large number of steps, there are concerns about production stability.

[0016] FIG. 1(c) is a cross-sectional view schematically showing the structure of a light-emitting device 1 having an insulating layer 140, an organic film (organic functional film) 200, and an upper electrode 300 laminated on the structure schematically shown in FIG. 1(a). The insulating layer 140 is formed, for example, by a plasma CVD method and is, for example, a silicon oxide film. The organic film 200 includes at least a light-emitting layer, and may further include, for example, a charge injection layer (hole injection layer, electron injection layer), a charge transport layer (hole transport layer, electron transport layer), a charge blocking layer, etc. The upper electrode 300 is desirably a thin-film transparent material so as to emit light upward without blocking the light generated in the organic film 200, and is formed, for example, of a thin film of gold, platinum, silver, aluminum, chromium, magnesium, or an alloy thereof.

[0017] The organic film 200 may include a low-resistance layer 210 and a light-emitting layer 220 on one side surface. The low-resistance layer 210 and the light-emitting layer 220 are each formed of an organic material. The resistance value of the low-resistance layer 210 is lower than the resistance value of the light-emitting layer 220. The low-resistance layer 210 may include at least one layer of a hole injection layer, a hole transport layer, and a charge generation layer. The light-emitting layer 220 generates light when current flows through the light-emitting layer 220. In the example of FIG. 1(c), the organic film 200 has one low-resistance layer 210 and one light-emitting layer 220. Instead of this, the organic film 200 may include a light-emitting layer for each of a plurality of emission colors and may be configured to emit white light.

[0018] The organic film 200 can be formed so as to enter the valley V. When the low-resistance layer 210 is formed by vapor deposition, the thickness of the low-resistance layer 210 may become thin or interrupted in the valley V or in the vicinity thereof. In the example of FIG. 1(c), the low-resistance layer 210 is interrupted in the valley V. When the low-resistance layer 210 becomes thin in this way, the resistance value becomes high at that portion. As a result, the current flowing from the individual lower electrodes 130 to the low-resistance layer 210 is restricted in the valley V. Thereby, the leakage current between the adjacent organic EL elements can be reduced.

[0019] Hereinafter, a method for manufacturing the light-emitting device 1 will be described with reference to FIGS. 2 to 9. FIGS. 2 to 9 show regions where three types of pixels (organic EL elements) 401, 402, and 403 that generate light in different wavelength ranges are formed. The method for manufacturing the light-emitting device 1 exemplified below includes steps A to H.

[0020] FIG. 2 schematically shows the state after process A. In process A, after forming a material layer for forming a reflective layer 101 and a material layer for forming a barrier layer 111 on a substrate SUB such as a semiconductor substrate, these are patterned to form the reflective layer 101 and the barrier layer 111 for pixels 401, 402, and 403. This patterning may include a photolithography process and a dry etching process. Although not described in FIG. 2, transistors, wirings, etc. are formed on the substrate SUB. The reflective layer 101 can be, for example, an AlCu film formed by sputtering. The barrier layer 111 can be, for example, a Ti / TiN film formed by film deposition by sputtering. The wiring layer (not shown) formed on the substrate 001 and the reflective layer 101 may be electrically connected via a conductive plug or the like so that the reflective layer 101 is used as part of a wiring pattern. The reflective layer 101 reflects the light generated in the organic film (light-emitting layer) formed later so that the light is extracted upward. The barrier layer 111 can function as a barrier metal for the reflective layer 101. Also, the barrier layer 111 can function as an intermediate layer for conducting the reflective layer 101 and the lower electrode formed later, that is, as a layer for reducing the conduction failure between the reflective layer 101 and the lower electrode. Further, the barrier layer 111 can function to suppress the reflection between pixels by providing a barrier layer with low reflectivity between pixels and perform resonance and amplification only in the pixel portion to provide good image quality.

[0021] FIG. 3 schematically shows the state after process B. In process B, an insulating layer 121 is formed. The insulating layer 121 is formed by, for example, plasma CVD and can be, for example, a silicon oxide film. Process B can be omitted. However, performing process B is advantageous for making the film configuration common among pixels 401, 402, and 403 when dry-etching the insulating layer, the barrier layer, and the reflective layer in this order to form a reflective surface in a later process, thereby stabilizing the manufacturing process.

[0022] FIG. 4 schematically shows the state after process C. In process C, after forming an opening for the reflective surface through a photolithography process and a dry etching process on the film structure for pixel 401, an insulating layer 122 is formed. In the opening formation process in process C, the insulating layer 121, the barrier layer 111, and the reflective layer 101 are etched in this order. The wall surface of the formed opening may be perpendicular to the upper surface of the substrate SUB or may have a taper. The insulating layer 122 is formed, for example, by plasma CVD method and is, for example, a silicon oxide film. Let the thickness of the insulating layer 122 be T2. T2 can be, for example, about 60 nm.

[0023] FIG. 5 schematically shows the state after process D. In process D, after forming an opening for the reflective surface through a photolithography process and a dry etching process on the film structure for pixel 402, an insulating layer 123 is formed. In the opening formation process in process D, the insulating layer 122, the insulating layer 121, the barrier layer 111, and the reflective layer 101 are etched in this order. The wall surface of the formed opening may be perpendicular to the upper surface of the substrate SUB or may have a taper. The insulating layer 123 is formed, for example, by plasma CVD method and is, for example, a silicon oxide film. Let the thickness of the insulating layer 123 be T3. T3 can be, for example, about 60 nm.

[0024] FIG. 6 schematically shows the state after process E. In process E, after forming an opening for the reflective surface through a photolithography process and a dry etching process on the film structure for pixel 403, an insulating layer 124 is formed. In the opening formation process in process E, the insulating layer 123, the insulating layer 122, the insulating layer 121, the barrier layer 111, and the reflective layer 101 are etched in this order. The wall surface of the formed opening may be perpendicular to the upper surface of the substrate SUB or may have a taper. The insulating layer 124 is formed, for example, by plasma CVD method and is, for example, a silicon oxide film. Let the thickness of the insulating layer 124 be T4. T4 can be, for example, about 110 nm.

[0025] The thickness T401 (the first thickness) of the optical adjustment layer of pixel 401 is T2 + T3 + T4, the thickness T402 (the second thickness) of the optical adjustment layer of pixel 402 is T3 + T4, and the thickness T403 (the third thickness) of the optical adjustment layer of pixel 403 is T4. In this way, three types of optical adjustment layers with different thicknesses can be formed. Here, T401 > T402 > T403. In the same way, two types or four or more types of optical adjustment layers can be formed.

[0026] In the above method, it is not necessary to control the thickness of the optical adjustment layer by etching or the like, and it becomes possible to control it by the thickness at the time of forming each insulating layer. Therefore, an optical adjustment layer having a thickness suitable for the optical resonance of each pixel can be stably obtained.

[0027] FIG. 7 schematically shows the state after process F. In process F, after forming a material layer for the lower electrode 130, this is patterned to form the lower electrodes 130 for pixels 401, 402, and 403. This patterning may include a photolithography process and a dry etching process. The lower electrode 130 is formed of, for example, indium tin oxide (ITO) or indium zinc oxide (IZO), and the material layer for the lower electrode 131 is formed by, for example, sputtering. Let the thickness of the lower electrode 130 be Tt.

[0028] As dry etching conditions for forming the lower electrode 130, when conditions with less etchant are used, a characteristic structure as schematically shown in Fig. 1(a) or Fig. 1(b) can be obtained. This is because the etching rate increases where it is closer to the resist mask formed by the photolithography process since the consumption of the etchant is less there, and the etching rate decreases where it is farther from the resist mask since the consumption of the etchant is more there. The conditions with less etchant can be obtained by reducing the pressure in the chamber where dry etching is performed or by reducing the flow rate of the etching gas. The advantages provided by the structure schematically shown in Fig. 1(a) or Fig. 1(b) are as described above. Although not shown in Fig. 7, contact holes and conductive plugs filled therein are also formed to electrically connect the wiring layer and the lower electrode 130.

[0029] Here, referring to Figs. 1(a) to (c), the insulating film 120 may include a bank-shaped insulator 50 disposed in the region between adjacent reflection layers 101. The bank-shaped insulator 50 may include the peripheral portions in adjacent reflection layers 101, an insulating layer 121 disposed between adjacent reflection layers 101, and an insulating layer 122 covering the insulating layer 121. Further, the insulating film 120 may include an insulating layer 123 (first insulating layer) covering each reflection layer 101 of a plurality of organic EL elements and an insulating layer 124 (second insulating layer) covering the insulating layer 123. The insulating layer 123 (first insulating layer) includes a convex portion 51 disposed to cover the insulator 50, and the insulating layer 124 (second insulating layer) may have a groove T on the convex portion 51.

[0030] FIG. 8 schematically shows the state after process G. In process G, after forming a material film for the insulating layer 140, this is patterned to expose the lower electrode 130 of each pixel. This patterning may include a photolithography process and a dry etching process. The insulating layer 140 is formed of, for example, a silicon oxide film, and the material film for the insulating layer 140 is formed by, for example, plasma CVD method. The lower electrodes 130 between pixels are electrically separated by the insulating layer 141.

[0031] FIG. 9 schematically shows the state after process H. In process H, the organic film 201 and the upper electrode 300 are formed. The organic film 201 includes at least a light emitting layer, and may further include, for example, a charge injection layer (hole injection layer, electron injection layer), a charge transport layer (hole transport layer, electron transport layer), a charge blocking layer, etc. The upper electrode 300 is preferably a thin film of a transparent material so as to emit light upward without blocking the light generated in the organic film 200, and is formed of, for example, a thin film of gold, platinum, silver, aluminum, chromium, magnesium or an alloy thereof.

[0032] In order to emit light upward without blocking the light emitted from the organic film 200, the upper electrode 300 is preferably formed of a thin film of a transparent material, and is formed of, for example, a thin film of gold, platinum, silver, aluminum, chromium, magnesium or an alloy thereof.

[0033] As described above, by going through processes A to H, a microcavity structure having three thicknesses (T401 + Tt, T402 + Tt, T403 + Tt) suitable for light in the wavelength range to be enhanced can be obtained. With this structure, the light generated in the light emitting layer of the organic film 200 and emitted downward is reflected by the reflective layer 101. Then, resonance and amplification are performed by an optical adjustment layer having a thickness suitable for the wavelength range to be enhanced in the microcavity structure. After process H, a sealing layer, a color filter layer, etc. may be appropriately formed on the upper electrode 300.

[0034] According to the above manufacturing method, the leakage current between pixels can be reduced through the organic film 200.

[0035] Examples of applications in which the light-emitting device 1 is applied to an image forming apparatus, a display device, a photoelectric conversion device, an electronic device, a lighting device, a moving body, and a wearable device will be exemplarily described below.

[0036] FIG. 10 is a schematic diagram showing an example of a display device 100 using the light-emitting device 1. The display device 1000 may include a touch panel 1003, a display panel 1005, a frame 1006, a circuit board SUB7, and a battery 1008 between an upper cover 1001 and a lower cover 1009. The touch panel 1003 and the display panel 1005 are connected to flexible printed circuits FPC1002 and 1004. Active elements such as transistors are arranged on the circuit board SUB7. The battery 1008 may not be provided if the display device 1000 is not a portable device, or even if it is a portable device, it does not have to be provided at this position. The light-emitting device 1 can be applied to the display panel 1005. A plurality of pixels arranged to form a pixel region of the light-emitting device 1 functioning as the display panel 1005 are connected to and operate with active elements such as transistors arranged on the circuit board SUB7.

[0037] The display device 1000 shown in FIG. 10 may be used for a display unit of a photoelectric conversion device (which may also be called an imaging device) having an optical unit having a plurality of lenses and an imaging element that receives light that has passed through the optical unit and photoelectrically converts it into an electrical signal. The photoelectric conversion device may have a display unit that displays information acquired by the imaging element. Further, the display unit may be a display unit exposed to the outside of the photoelectric conversion device or a display unit disposed in a viewfinder. The photoelectric conversion device may be a digital camera or a digital video camera.

[0038] FIG. 11(a) is a schematic diagram showing an example of a photoelectric conversion device using the light-emitting device 1 of the present embodiment. The photoelectric conversion device 1100 may include a viewfinder 1101, a rear display 1102, an operation unit 1103, and a housing 1104. The photoelectric conversion device 1100 may also be referred to as an imaging device. The light-emitting device 1 of the present embodiment may be applied to the viewfinder 1101 and the rear display 1102 which are display units. In this case, the pixel region of the light-emitting device 1 may display not only the image to be captured but also environmental information, imaging instructions, and the like. The environmental information may include the intensity of external light, the direction of external light, the speed at which the subject moves, the possibility that the subject is shielded by an obstacle, and the like.

[0039] The photoelectric conversion device 1100 has an optical unit (not shown). The optical unit has a plurality of lenses and forms an image on a photoelectric conversion element (not shown) housed in the housing 1104 that receives the light that has passed through the optical unit. The plurality of lenses can adjust the focus by adjusting their relative positions. This operation can also be performed automatically.

[0040] The light-emitting device 1 may be applied to the display unit of an electronic device. In that case, it may have both a display function and an operation function. Examples of the portable terminal include mobile phones such as smartphones, tablets, and head-mounted displays.

[0041] FIG. 11(b) is a schematic diagram showing an example of an electronic device using the light-emitting device 1 of the present embodiment. The electronic device 1200 includes a display unit 1201, an operation unit 1202, and a housing 1203. The housing 1203 may include a circuit, a printed circuit board having the circuit, a battery, and a communication unit. The operation unit 1202 may be a button or a reaction unit using a touch panel method. The operation unit 1202 may be a biometric recognition unit that recognizes a fingerprint to unlock the device or perform other operations. A portable device having a communication unit may also be referred to as a communication device. The light-emitting device 1 of the present embodiment may be applied to the display unit 1201.

[0042] Figs. 12(a) and 12(b) are schematic diagrams showing an example of a display device using the light-emitting device 1 of the present embodiment. Fig. 11(a) is a display device such as a TV monitor or a PC monitor. The display device 1300 has a frame 1301 and a display unit 1302. The light-emitting device 1 of the present embodiment can be applied to the display unit 1302. The display device 1300 may have a base 1303 that supports the frame 1301 and the display unit 1302. The base 1303 is not limited to the form of Fig. 12(a). For example, the lower side of the frame 1301 may also serve as the base 1303. Further, the frame 1301 and the display unit 1302 may be curved. The radius of curvature may be 5000 mm or more and 6000 mm or less.

[0043] Fig. 12(b) is a schematic diagram showing another example of a display device using the light-emitting device 1 of the present embodiment. The display device 1310 in Fig. 12(b) is configured to be foldable and is a so-called foldable display device. The display device 1310 has a first display unit 1311, a second display unit 1312, a housing 1313, and a bending point 1314. The light-emitting device 1 of the present embodiment can be applied to the first display unit 1311 and the second display unit 1312. The first display unit 1311 and the second display unit 1312 may be a single seamless display device. The first display unit 1311 and the second display unit 1312 can be separated at the bending point. The first display unit 1311 and the second display unit 1312 may display different images, or may display a single image with the first display unit and the second display unit.

[0044] FIG. 13(a) is a schematic diagram showing an example of a lighting device using the light-emitting device 1 of the present embodiment. The lighting device 1400 may include a housing 1401, a light source 1402, a circuit board 1403, an optical film 1404, and a light diffusing portion 1405. The light-emitting device 1 of the present embodiment can be applied to the light source 1402. The optical film 1404 may be a filter that improves the color rendering property of the light source. The light diffusing portion 1405 can effectively diffuse the light of the light source, such as lighting up, and deliver the light to a wide range. If necessary, a cover may be provided on the outermost side. The lighting device 1400 may have both the optical film 1404 and the light diffusing portion 1405, or may have only one of them.

[0045] The lighting device 1400 is, for example, a device for lighting an interior. The lighting device 1400 may emit any color from white, warm white, to other colors from blue to red. It may have a dimming circuit for dimming them. The lighting device 1400 may have a power supply circuit connected to the light-emitting device 1 that functions as the light source 1402. The power supply circuit is a circuit that converts an AC voltage into a DC voltage. Also, white has a color temperature of 4200K and warm white has a color temperature of 5000K. Further, the lighting device 1400 may have a color filter. Also, the lighting device 1400 may have a heat radiating portion. The heat radiating portion releases the heat inside the device to the outside of the device, and examples include metals with high specific heat and liquid silicone.

[0046] FIG. 13(b) is a schematic diagram of an automobile having a tail lamp, which is an example of a vehicle lamp using the light-emitting device 1 of the present embodiment. The automobile 1500 has a tail lamp 1501, and may be configured to light up the tail lamp 1501 when a braking operation or the like is performed. The light-emitting device 1 of the present embodiment may be used as a head lamp as a vehicle lamp. An automobile is an example of a moving body, and the moving body may be a ship, a drone, an aircraft, a railway vehicle, an industrial robot, or the like. The moving body may have a body and a lamp provided thereon. The lamp may notify the current position of the body.

[0047] The light-emitting device 1 of the present embodiment can be applied to the tail lamp 1501. The tail lamp 1501 may have a protective member that protects the light-emitting device 1 functioning as the tail lamp 1501. The protective member has a certain degree of high strength and may be made of any material as long as it is transparent, and may be composed of polycarbonate or the like. Further, the protective member may be mixed with a phthalic acid derivative, an acrylonitrile derivative, or the like in the polycarbonate.

[0048] The automobile 1500 may have a vehicle body 1503 and a window 1502 attached thereto. The window may be a window for checking the front and rear of the automobile, or may be a transparent display such as a head-up display. The light-emitting device 1 of the present embodiment may be used for the transparent display. In this case, the constituent materials such as the electrodes of the light-emitting device 1 are made of transparent members.

[0049] With reference to FIGS. 14(a) and 14(b), a further application example of the light-emitting device 1 of the present embodiment will be described. The light-emitting device 1 can be applied to a system that can be worn as a wearable device such as smart glass, a head-mounted display (HMD), or smart contact. The imaging display device used in such an application example has an imaging device capable of photoelectrically converting visible light and a light-emitting device capable of emitting visible light.

[0050] FIG. 14(a) illustrates glasses 1600 (smart glass) according to one application example. An imaging device 1602 such as a CMOS sensor or a SPAD is provided on the front surface side of the lens 1601 of the glasses 1600. Further, the light-emitting device 1 of the present embodiment is provided on the back surface side of the lens 1601.

[0051] The glasses 1600 further include a control device 1603. The control device 1603 functions as a power source that supplies power to the imaging device 1602 and the light-emitting device 1 according to each embodiment. Further, the control device 1603 controls the operations of the imaging device 1602 and the light-emitting device 1. An optical system for condensing light onto the imaging device 1602 is formed on the lens 1601.

[0052] FIG. 14(b) illustrates glasses 1610 (smart glasses) according to one application example. The glasses 1610 include a control device 1612, and a imaging device corresponding to the imaging device 1602 and the light emitting device 1 are mounted on the control device 1612. An imaging device within the control device 1612 and an optical system for projecting the light emitted from the light emitting device 1 are formed in the lens 1611, and an image is projected onto the lens 1611. The control device 1612 functions as a power supply for supplying power to the imaging device and the light emitting device 1, and controls the operations of the imaging device and the light emitting device 1. The control device 1612 may have a gaze detection unit for detecting the wearer's gaze. Infrared rays may be used for gaze detection. The infrared light emitting unit emits infrared light to the eyeball of the user who is gazing at the display image. An imaging image of the eyeball is obtained by detecting the reflected light of the emitted infrared light from the eyeball by an imaging unit having a light receiving element. By having a reducing means for reducing the light from the infrared light emitting unit to the display unit in a plan view, a decrease in image quality is reduced.

[0053] The user's gaze with respect to the display image is detected from the imaging image of the eyeball obtained by imaging infrared light. Any known method can be applied to gaze detection using the imaging image of the eyeball. As an example, a gaze detection method based on the Purkinje image by reflection of irradiation light on the cornea can be used.

[0054] More specifically, a gaze detection process based on the pupil corneal reflex method is performed. Using the pupil corneal reflex method, a gaze vector representing the orientation (rotation angle) of the eyeball is calculated based on the image of the pupil and the Purkinje image included in the imaging image of the eyeball, whereby the user's gaze is detected.

[0055] The light emitting device 1 according to the embodiment of the present disclosure may include an imaging device having a light receiving element, and may control a display image based on the user's gaze information from the imaging device.

[0056] Specifically, the light-emitting device 1 determines a first visual field region that the user gazes at and a second visual field region other than the first visual field region based on the line-of-sight information. The first visual field region and the second visual field region may be determined by the control device of the light-emitting device 1, or may be received from an external control device. In the display region of the light-emitting device 1, the display resolution of the first visual field region may be controlled to be higher than that of the second visual field region. That is, the resolution of the second visual field region may be made lower than that of the first visual field region.

[0057] Further, the display region has a first display region and a second display region different from the first display region, and based on the line-of-sight information, a region with a higher priority is determined from the first display region and the second display region. The first display region and the second display region may be determined by the control device of the light-emitting device 1, or may be received from an external control device. The resolution of the region with a higher priority may be controlled to be higher than that of the region other than the region with a higher priority. That is, the resolution of the region with a relatively lower priority may be made lower.

[0058] Note that AI may be used to determine the first visual field region or the region with a higher priority. AI may be a model configured to estimate the angle of the line of sight and the distance to the object at the tip of the line of sight from the eye image using the eye image and the direction in which the eye of the image is actually looking as teacher data. The AI program may be possessed by the light-emitting device 1, the imaging device, or an external device. When possessed by an external device, it is transmitted to the light-emitting device 1 via communication.

[0059] When performing display control based on visual recognition detection, it can be applied to smart glasses further having an imaging device for imaging the outside. The smart glasses can display the imaged external information in real time.

[0060] Figs. 15(a) to 15(c) are schematic diagrams showing an example of an image forming apparatus using the light-emitting device 1 of the present embodiment. The image forming apparatus 40 shown in Fig. 15(a) includes a photoreceptor 27, an exposure light source 28, a developing unit 31, a charging unit 30, a transferrer 32, a transport unit 33 (in the configuration of Fig. 15(a), a transport roller), and a fixing unit 35.

[0061] Light 29 is irradiated from the exposure light source 28, and an electrostatic latent image is formed on the surface of the photoreceptor 27. The light-emitting device 1 can be applied to this exposure light source 28. The developing unit 31 can function as a developing device that contains toner or the like as a developer and applies the developer to the exposed photoreceptor 27. The charging unit 30 charges the photoreceptor 27. The transferrer 32 transfers the developed image onto the recording medium 34. The conveying unit 33 conveys the recording medium 34. The recording medium 34 can be, for example, paper, film, or the like. The fixing unit 35 fixes the image formed on the recording medium.

[0062] FIGS. 15(b) and 15(c) are schematic diagrams showing a state in which a plurality of light-emitting portions 36 are arranged along the longitudinal direction on a long substrate as the exposure light source 28. The light-emitting device 1 can be applied to this light-emitting portion 36. That is, a plurality of pixels arranged to form a pixel array are arranged along the longitudinal direction of the substrate. The direction 37 is a direction parallel to the axis of the photoreceptor 27. This column direction is the same as the direction of the axis when the photoreceptor 27 rotates. This direction 37 can also be called the major axis direction of the photoreceptor 27.

[0063] FIG. 15(b) shows a form in which the light-emitting portion 36 is arranged along the major axis direction of the photoreceptor 27. FIG. 15(c) is a modification of the arrangement of the light-emitting portion 36 shown in FIG. 15(b), and is a form in which the light-emitting portions 36 are alternately arranged in the column direction in each of the first column and the second column. In the first column and the second column, the light-emitting portions 36 are arranged at different positions in the row direction. In the first column, a plurality of light-emitting portions 36 are arranged at intervals, and in the second column, the light-emitting portions 36 are arranged at positions corresponding to the gaps between the light-emitting portions 36 in the first column. Also, in the row direction, a plurality of light-emitting portions 36 are arranged at intervals. The arrangement of the light-emitting portions 36 shown in FIG. 15(c) can be described as, for example, a state of being arranged in a grid pattern, a state of being arranged in a staggered grid, or a checkered pattern.

[0064] This specification and the drawings include the following disclosures. (Item 1) A light-emitting device having a plurality of organic EL elements arranged on a substrate, It has an insulating film that insulates adjacent lower electrodes among the lower electrodes of each of the plurality of organic EL elements from each other, the insulating film has a groove between the adjacent lower electrodes, the surface of the groove includes two opposing wall surfaces and a bottom surface located between the two wall surfaces, the bottom surface includes a convex surface protruding in a direction away from the substrate, and in a direction in which the two wall surfaces face each other, the width of the convex surface is 1 / 3 or more of the shortest distance between the two wall surfaces, A light-emitting device characterized by this. (Item 2) the bottom surface includes a non-convex surface between the two wall surfaces and the convex surface, and in a direction in which the two wall surfaces face each other, the width of the non-convex surface is smaller than the width of the convex surface, The light-emitting device according to item 1, characterized by this. (Item 3) It further includes an insulating layer covering the peripheral portion of the lower electrode and the groove, the plurality of organic EL elements include a plurality of organic layers covering the lower electrode and the insulating film, The light-emitting device according to item 1 or 2, characterized by this. (Item 4) In at least one organic layer of the plurality of organic layers, the thickness of the portion disposed on the peripheral portion of the bottom surface is thinner than the thickness of the portion disposed on the central portion of the bottom surface, The light-emitting device according to item 3, characterized by this. (Item 5) In at least one organic layer of the plurality of organic layers, the thickness of the portion disposed on the peripheral portion of the bottom surface is thinner than the thickness of the portion disposed on the convex surface, The light-emitting device according to item 3, characterized by this. (Item 6) Each of the plurality of organic EL elements includes an upper electrode, the plurality of organic layers include a light-emitting layer and a charge generation layer disposed between the light-emitting layer and the upper electrode, the at least one organic layer includes the charge generation layer, The light-emitting device according to item 4 or 5, characterized in that (Item 7) The difference between the thickness of the upper electrode on the peripheral portion and the thickness of the upper electrode on the central portion is smaller than the difference between the thickness of the charge generation layer on the peripheral portion and the thickness of the charge generation layer on the central portion. The light-emitting device according to item 6, characterized in that (Item 8) The lower electrode further includes an insulating layer covering the peripheral portion and the groove. The plurality of organic EL elements include a plurality of organic layers covering the lower electrode and the insulating film. For at least one of the plurality of organic layers, the thickness of the portion disposed on the non-convex surface of the bottom surface is thinner than the thickness of the portion disposed on the convex surface. The light-emitting device according to item 2, characterized in that (Item 9) Each of the plurality of organic EL elements includes an upper electrode. The plurality of organic layers include a light-emitting layer and a charge generation layer disposed between the light-emitting layer and the upper electrode. The at least one organic layer includes the charge generation layer. The light-emitting device according to item 8, characterized in that (Item 10) The difference between the thickness of the upper electrode on the non-convex surface and the thickness of the upper electrode on the convex surface is smaller than the difference between the thickness of the charge generation layer on the non-convex surface and the thickness of the charge generation layer on the convex surface. The light-emitting device according to item 9, characterized in that (Item 11) Each of the plurality of organic EL elements has a reflective layer disposed under the lower electrode, and the insulating film is disposed so as to cover the reflective layer of each of the plurality of organic EL elements and the region between the reflective layers adjacent to each other among the reflective layers of each of the plurality of organic EL elements. The light-emitting device according to any one of items 1 to 10, characterized in that (Item 12) The insulating film includes a bank-shaped insulator disposed in the region between the adjacent reflection layers, a first insulating layer covering the reflection layers of the plurality of organic EL elements and the insulator, and a second insulating layer covering the first insulating layer. The first insulating layer includes a convex portion disposed so as to cover the insulator, and the second insulating layer has the groove on the convex portion. The light-emitting device according to item 11, characterized in that. (Item 13) The plurality of organic EL elements include a first organic EL element in which the thickness of the insulating film between the reflection layer and the lower electrode is a first thickness, and a second organic EL element in which the thickness of the insulating film between the reflection layer and the lower electrode is a second thickness. The light-emitting device according to item 12, characterized in that. (Item 14) A photoreceptor, an exposure light source for exposing the photoreceptor, a developing device for applying a developer to the exposed photoreceptor, and a transfer device for transferring the image developed by the developing device to a recording medium. An image forming apparatus, characterized in that the exposure light source has the light-emitting device according to any one of items 1 to 13. (Item 15) A display device, characterized by having the light-emitting device according to any one of items 1 to 13 and an active element connected to the light-emitting device. (Item 16) An optical unit having a plurality of lenses, an imaging element that receives light that has passed through the optical unit, and a display unit that displays an image. The display unit displays an image captured by the imaging element and has the light-emitting device according to any one of items 1 to 13, and is characterized as a photoelectric conversion device. (Item 17) A housing provided with a display unit, and a communication unit provided in the housing and communicating with the outside. An electronic device, characterized in that the display unit has the light-emitting device according to any one of items 1 to 13. (Item 18) An illumination device having at least one of a light source, a light diffusing portion, and an optical film, The illumination device is characterized in that the light source has the light emitting device according to any one of Items 1 to 13. (Item 19) A moving body having a body and a lighting fixture provided on the body, The moving body is characterized in that the lighting fixture has the light emitting device according to any one of Items 1 to 13. (Item 20) A wearable device having a display device for displaying an image, The wearable device is characterized in that the display device has the light emitting device according to any one of Items 1 to 13.

[0065] The invention is not limited to the above embodiments, and various changes and modifications are possible without departing from the spirit and scope of the invention. Therefore, claims are attached to disclose the scope of the invention.

Claims

1. A light-emitting device having a plurality of organic EL elements disposed on a substrate, having an insulating film that insulates adjacent lower electrodes among the lower electrodes of each of the plurality of organic EL elements from each other, the insulating film has a groove between the adjacent lower electrodes, the surface of the groove includes two opposing wall surfaces and a bottom surface located between the two wall surfaces, the bottom surface includes a convex surface protruding in a direction away from the substrate, and in a direction in which the two wall surfaces face each other, the width of the convex surface is 1 / 3 or more of the shortest distance between the two wall surfaces, A light-emitting device characterized by this.

2. the bottom surface includes a non-convex surface between the two wall surfaces and the convex surface, and in a direction in which the two wall surfaces face each other, the width of the non-convex surface is smaller than the width of the convex surface, The light-emitting device according to claim 1, characterized by this.

3. further including an insulating layer covering a peripheral portion of the lower electrode and the groove, the plurality of organic EL elements include a plurality of organic layers covering the lower electrode and the insulating film, The light-emitting device according to claim 1, characterized by this.

4. In at least one of the plurality of organic layers, the thickness of a portion disposed on a peripheral portion of the bottom surface is thinner than the thickness of a portion disposed on a central portion of the bottom surface, The light-emitting device according to claim 3, characterized by this.

5. In at least one of the plurality of organic layers, the thickness of a portion disposed on a peripheral portion of the bottom surface is thinner than the thickness of a portion disposed on the convex surface, The light-emitting device according to claim 3, characterized by this.

6. Each of the plurality of organic EL elements includes an upper electrode, The plurality of organic layers include a light-emitting layer and a charge generation layer disposed between the light-emitting layer and the upper electrode. The at least one organic layer includes the charge generation layer. The light-emitting device according to claim 4, characterized in that.

7. The difference between the thickness of the upper electrode on the peripheral portion and the thickness of the upper electrode on the central portion is smaller than the difference between the thickness of the charge generation layer on the peripheral portion and the thickness of the charge generation layer on the central portion. The light-emitting device according to claim 6, characterized in that.

8. The lower electrode further includes an insulating layer covering the peripheral portion and the groove. The plurality of organic EL elements include a plurality of organic layers covering the lower electrode and the insulating film. In at least one organic layer of the plurality of organic layers, the thickness of the portion disposed on the non-convex surface of the bottom surface is thinner than the thickness of the portion disposed on the convex surface. The light-emitting device according to claim 2, characterized in that.

9. Each of the plurality of organic EL elements includes an upper electrode. The plurality of organic layers include a light-emitting layer and a charge generation layer disposed between the light-emitting layer and the upper electrode. The at least one organic layer includes the charge generation layer. The light-emitting device according to claim 8, characterized in that.

10. The difference between the thickness of the upper electrode on the non-convex surface and the thickness of the upper electrode on the convex surface is smaller than the difference between the thickness of the charge generation layer on the non-convex surface and the thickness of the charge generation layer on the convex surface. The light-emitting device according to claim 9, characterized in that.

11. Each of the plurality of organic EL elements has a reflective layer disposed under the lower electrode, and the insulating film is disposed so as to cover the reflective layer of each of the plurality of organic EL elements and the region between the reflective layers adjacent to each other among the reflective layers of each of the plurality of organic EL elements. The light-emitting device according to claim 1, characterized in that.

12. The insulating film includes a bank-shaped insulator disposed in the region between the adjacent reflective layers, a first insulating layer covering the reflective layer of each of the plurality of organic EL elements and the insulator, and a second insulating layer covering the first insulating layer. The first insulating layer includes a convex portion disposed so as to cover the insulator, and the second insulating layer has the groove on the convex portion. The light-emitting device according to claim 11, characterized in that.

13. The plurality of organic EL elements include a first organic EL element having a first thickness of the insulating film between the reflective layer and the lower electrode, and a second organic EL element having a second thickness of the insulating film between the reflective layer and the lower electrode. The light-emitting device according to claim 12, characterized in that.

14. It has a photoreceptor, an exposure light source for exposing the photoreceptor, a developing device for applying a developer to the exposed photoreceptor, and a transfer device for transferring the image developed by the developing device to a recording medium. The image forming apparatus, characterized in that the exposure light source has the light-emitting device according to any one of claims 1 to 13.

15. The display device, characterized in that it has the light-emitting device according to any one of claims 1 to 13 and an active element connected to the light-emitting device.

16. It has an optical unit having a plurality of lenses, an imaging element that receives light that has passed through the optical unit, and a display unit that displays an image. The display unit displays an image captured by the imaging device, and is a photoelectric conversion device characterized by having the light-emitting device according to any one of claims 1 to 13.

17. It has a housing provided with a display unit and a communication unit provided in the housing for communicating with the outside. The display unit is an electronic device characterized by having the light-emitting device according to any one of claims 1 to 13.

18. An illumination device having at least one of a light source, a light diffusing unit, and an optical film. The light source is an illumination device characterized by having the light-emitting device according to any one of claims 1 to 13.

19. A moving body having a body and a lighting fixture provided on the body. The lighting fixture is a moving body characterized by having the light-emitting device according to any one of claims 1 to 13.

20. A wearable device having a display device for displaying an image. The display device is a wearable device characterized by having the light-emitting device according to any one of claims 1 to 13.

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