Organic compound and light-emitting device

Abstract

To provide a novel organic compound and a light-emitting device using the organic compound.SOLUTION: An organic compound has a benzofuropyrimidine skeleton or a benzothienopyrimidine skeleton, a first substituent, and a second substituent. The first substituent represents a carbazole skeleton. The second substituent represents any of a carbazole skeleton, a dibenzofuran skeleton, a tetraphenylsilane skeleton, or a triphenylene skeleton. The first substituent is bonded to a pyrimidine ring of the benzofuropyrimidine skeleton or the benzothienopyrimidine skeleton. The second substituent is bonded to a benzene ring of the benzofuropyrimidine skeleton or the benzothienopyrimidine skeleton.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] One aspect of the present invention relates to an organic compound, an organic semiconductor device, a light-emitting device, a photodiode sensor, a display module, a lighting module, a display device, an electronic device, a lighting device, and an electronic device. Note that one aspect of the present invention is not limited to the above technical field. The technical field of one aspect of the invention disclosed in this specification or the like relates to an object, a method, or a manufacturing method. Alternatively, one aspect of the present invention relates to a process, a machine, a manufacture, or a composition of matter. Therefore, more specifically, examples of the technical field of one aspect of the present invention disclosed in this specification include semiconductor devices, display devices, liquid crystal display devices, lighting devices, power storage devices, storage devices, imaging devices, their driving methods, or their manufacturing methods.

Background Art

[0002] A light-emitting device (also referred to as an organic EL device) having an organic compound as a light-emitting substance between a pair of electrodes has characteristics such as being thin, lightweight, having a high-speed response, and being driven at a low voltage, and thus development of displays applying this device has been underway. When a voltage is applied to this light-emitting device, electrons and holes injected from the electrodes recombine, whereby the light-emitting substance becomes excited, and light is emitted when the excited state returns to the ground state. Note that as types of excited states, there are a singlet excited state (S * ) and a triplet excited state (T * ), and light emission from the singlet excited state is called fluorescence, and light emission from the triplet excited state is called phosphorescence. Further, the statistical generation ratio of these in the light-emitting device is considered to be S * :T * = 1:3.

[0003] In addition, among the above light-emitting substances, a compound capable of converting the energy in the singlet excited state into light emission is called a fluorescent compound (fluorescent material), and a compound capable of converting the energy in the triplet excited state into light emission is called a phosphorescent compound (phosphorescent material).

[0004] Therefore, when based on the above production ratios, the theoretical limits of the internal quantum efficiency (the ratio of photons generated with respect to the injected carriers) in the light-emitting devices using the above respective light-emitting materials are 25% for the case of using a fluorescent material and 75% for the case of using a phosphorescent material.

[0005] Also, since these light-emitting devices can form a light-emitting layer continuously in two dimensions, light emission in a planar shape can be obtained. This is a characteristic that is difficult to obtain with point light sources typified by incandescent bulbs and LEDs, or line light sources typified by fluorescent lamps, and thus it also has high utility value as a planar light source applicable to lighting and the like.

[0006] Regarding such light-emitting devices, in order to improve their element characteristics, material development, improvement of element structures, etc. are being carried out. For example, in Patent Document 1, a light-emitting device using a novel anthracene derivative as a host material to form a light-emitting element with high luminous efficiency is disclosed.

Prior Art Documents

Patent Documents

[0007]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0008] One aspect of the present invention aims to provide a novel organic compound. Another aspect of the present invention aims to provide an organic compound that can be used in a light-emitting device. Further, in one aspect of the present invention, it is an object to provide a light-emitting device with high luminous efficiency. Alternatively, in one aspect of the present invention, it is an object to provide a light-emitting device with high color purity. Alternatively, in one aspect of the present invention, it is an object to provide a light-emitting device with good reliability. Alternatively, it is an object to provide any one of a display device, an electronic device, and a lighting device with low power consumption. Alternatively, it is an object to provide any one of a display device, an electronic device, and a lighting device with high reliability. Alternatively, it is an object to provide any one of a display device, an electronic device, and a lighting device with high color purity.

[0009] The present invention only needs to solve any one of the above-mentioned problems.

Means for Solving the Problems

[0010] One aspect of the present invention is an organic compound having a benzofuropyrimidine skeleton or a benzothienopyrimidine skeleton, a first substituent, and a second substituent, wherein the first substituent represents a carbazole skeleton, and the second substituent represents any one of a carbazole skeleton, a dibenzofuran skeleton, a tetraphenylsilane skeleton, or a triphenylene skeleton. The first substituent is bonded to the pyrimidine ring of the benzofuropyrimidine skeleton or the benzothienopyrimidine skeleton, and the second substituent is bonded to the benzene ring of the benzofuropyrimidine skeleton or the benzothienopyrimidine skeleton.

[0011] In addition, one aspect of the present invention is an organic compound having a benzofuro[3,2-d]pyrimidine skeleton or a benzothieno[3,2-d]pyrimidine skeleton, a first substituent, and a second substituent, wherein the first substituent represents a carbazole skeleton, and the second substituent represents any one of a carbazole skeleton, a dibenzofuran skeleton, a tetraphenylsilane skeleton, or a triphenylene skeleton. The first substituent is bonded to the 4-position of the benzofuro[3,2-d]pyrimidine skeleton or the 4-position of the benzothieno[3,2-d]pyrimidine skeleton, and the second substituent is bonded to the 8-position of the benzofuro[3,2-d]pyrimidine skeleton or the 8-position of the benzothieno[3,2-d]pyrimidine skeleton.

[0012] In addition, one aspect of the present invention is an organic compound represented by the general formula (G1).

[0013]

Chemical formula

[0014] In the above formula, R 1 to R 8 each independently represents hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, or a substituted or unsubstituted cycloalkyl group having 3 to 6 carbon atoms. R 9 to R 11 each independently represents hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 6 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms. X represents an oxygen atom or a sulfur atom, and A1 represents any one of the substituents represented by the following general formulas (A-1) to (A-5).

[0015]

Chemical formula

[0016] In the above formula, R 12 to R 57Each independently represents hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 6 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms.

[0017] In the above organic compound, the lowest triplet excitation energy (T1) level is 2.95 eV or less and 2.75 eV or more.

[0018] Another aspect of the present invention is an organic compound represented by structural formula (100), structural formula (101), structural formula (102), or structural formula (103).

[0019]

Chemical formula

[0020] Another aspect of the present invention is a light-emitting device having a first electrode, a second electrode, and a light-emitting layer between the first electrode and the second electrode. The light-emitting layer has a first organic compound, a second organic compound, and a light-emitting substance that exhibits blue color. The second organic compound has a benzofuro[3,2-d]pyrimidine skeleton or a benzothieno[3,2-d]pyrimidine skeleton, a first substituent, and a second substituent. The first substituent represents a carbazole skeleton, and the second substituent represents any one of a carbazole skeleton, a dibenzofuran skeleton, a tetraphenylsilane skeleton, or a triphenylene skeleton. The first substituent is bonded to the 4-position of the benzofuro[3,2-d]pyrimidine skeleton or the 4-position of the benzothieno[3,2-d]pyrimidine skeleton, and the second substituent is bonded to the 8-position of the benzofuro[3,2-d]pyrimidine skeleton or the 8-position of the benzothieno[3,2-d]pyrimidine skeleton. The absolute value of the difference between the HOMO level of the first organic compound and the LUMO level of the second organic compound is 2.78 eV or more and 2.85 eV or less.

[0021] Also, one aspect of the present invention is a light-emitting device having a first electrode, a second electrode, and a light-emitting layer between the first electrode and the second electrode, the light-emitting layer having a first organic compound, a second organic compound represented by the general formula (G1), and a light-emitting substance exhibiting blue color, and the absolute value of the difference between the HOMO level of the first organic compound and the LUMO level of the second organic compound being 2.78 eV or more and 2.85 eV or less.

[0022]

Chemical formula

[0023] In the above formula, R 1 to R 8 each independently represents hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 6 carbon atoms, X represents an oxygen atom or a sulfur atom, and A1 represents any one of the substituents represented by the following general formulas (A-1) to (A-5).

[0024]

Chemical formula

[0025] In the above formula, R 12 to R 57 each independently represents hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 6 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms.

[0026] Also, one aspect of the present invention is a light-emitting device having an organic compound represented by the structural formula (100), the structural formula (101), the structural formula (102), or the structural formula (103).

[0027]

Chemical formula

[0028] In the above light-emitting device, the first organic compound and the second organic compound are a combination capable of forming an exciplex.

[0029] In the above light-emitting device, the emission spectrum of the light-emitting substance is a light-emitting device that is 400 nm or more and less than 490 nm.

[0030] In the above light-emitting device, the light-emitting substance is a light-emitting device capable of obtaining phosphorescent emission.

[0031] In the above light-emitting device, the light-emitting layer is a light-emitting device having a fluorescent sensitizing material.

[0032] Alternatively, another aspect of the present invention is a display device including the light-emitting device described in any of the above.

[0033] Alternatively, another aspect of the present invention is an electronic device including the above light-emitting device, a sensor, an operation button, a speaker, or a microphone.

[0034] Alternatively, another aspect of the present invention is a lighting device including the above light-emitting device and a housing.

Advantages of the Invention

[0035] According to one aspect of the present invention, a novel organic compound can be provided. Further, according to one aspect of the present invention, an organic compound that can be used in a light-emitting device can be provided. Further, in one aspect of the present invention, a light-emitting device with high luminous efficiency can be provided. Alternatively, in one aspect of the present invention, a light-emitting device with high color purity can be provided. Alternatively, in one aspect of the present invention, a light-emitting device with good reliability can be provided. Alternatively, any one of a display device, an electronic device, and a lighting device with low power consumption can be provided. Alternatively, any one of a display device, an electronic device, and a lighting device with high reliability can be provided. Alternatively, any one of a display device, an electronic device, and a lighting device with high color purity can be provided.

[0036] Note that the description of these effects does not preclude the existence of other effects. Note that one aspect of the present invention does not necessarily have to have all of these effects. Note that other effects will be apparent from the description in the specification, drawings, claims, etc., and it is possible to extract these other effects from the description in the specification, drawings, claims, etc.

Brief Description of the Drawings

[0037]

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Embodiments for Carrying Out the Invention

[0038] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and those skilled in the art can easily understand that the form and details can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited to the description of the embodiments shown below.

[0039] In this specification and the like, a device manufactured using a metal mask or an FMM (fine metal mask, high-definition metal mask) may be referred to as a device having an MM (metal mask) structure. Also, in this specification and the like, a device manufactured without using a metal mask or an FMM may be referred to as a device having an MML (metal maskless) structure.

[0040] (Embodiment 1) In this embodiment, an organic compound which is an aspect of the present invention will be described.

[0041] <Examples of Organic Compounds> An organic compound according to one embodiment of the present invention has a benzofuropyrimidine skeleton or a benzothienopyrimidine skeleton, a first substituent, and a second substituent. The first substituent represents a carbazole skeleton, and the second substituent represents any one of a carbazole skeleton, a dibenzofuran skeleton, a tetraphenylsilane skeleton, or a triphenylene skeleton. The first substituent is bonded to the pyrimidine ring of the benzofuropyrimidine skeleton or the benzothienopyrimidine skeleton, and the second substituent is an organic compound bonded to the benzene ring of the benzofuropyrimidine skeleton or the benzothienopyrimidine skeleton.

[0042] In particular, the benzofuropyrimidine skeleton or the benzothienopyrimidine skeleton is preferably a benzofuro[3,2-d]pyrimidine skeleton or a benzothieno[3,2-d]pyrimidine skeleton. Since the skeleton has a high triplet excitation energy level (T1 level) and a high electron transporting property, it is optimal as a material used for a light-emitting device in the blue region.

[0043] Therefore, an organic compound according to another embodiment of the present invention has a benzofuro[3,2-d]pyrimidine skeleton or a benzothieno[3,2-d]pyrimidine skeleton, a first substituent, and a second substituent. The first substituent represents a carbazole skeleton, and the second substituent represents any one of a carbazole skeleton, a dibenzofuran skeleton, a tetraphenylsilane skeleton, or a triphenylene skeleton. The first substituent is bonded to the 4-position of the benzofuro[3,2-d]pyrimidine skeleton or the benzothieno[3,2-d]pyrimidine skeleton, and the second substituent is an organic compound bonded to the 8-position of the benzofuro[3,2-d]pyrimidine skeleton or the benzothieno[3,2-d]pyrimidine skeleton.

[0044] In addition, by having a carbazole skeleton at the 4-position of the benzofuro[3,2-d]pyrimidine skeleton or benzothieno[3,2-d]pyrimidine skeleton, the spread of conjugation can be suppressed, and an appropriate LUMO (Lowest Unoccupied Molecular Orbital) level can be maintained. Moreover, while maintaining a high triplet excitation energy level (T1 level), the thermal properties can be improved and the stability of the molecule can be enhanced.

[0045] Also, by having a substituent at the 8-position of the benzofuro[3,2-d]pyrimidine skeleton or benzothieno[3,2-d]pyrimidine skeleton, while maintaining a high triplet excitation energy level (T1 level), the thermal properties can be improved and the stability of the molecule can be enhanced.

[0046] Furthermore, the organic compound according to one embodiment of the present invention has a lowest triplet excitation energy (T1) level of 2.95 eV or less and 2.75 eV or more.

[0047] Regarding the lowest triplet excitation energy (T1) of an organic compound, a tangent may be drawn at the value where the slope on the short-wavelength side of the peak in the phosphorescence spectrum is maximum, and the energy at the intersection of the tangent with the horizontal axis (wavelength) or the baseline may be defined as the T1 level (see, for example, Daisaku TANAKA et al., "Ultra High Efficiency Green Organic Light-Emitting Devices", Japanese Journal of Applied Physics, Vol. 46, No. 1, 2007, pp. L10-L12). As another method, when the ν = 0 → ν = 0 transition (0 → 0 band) between the vibrational levels of the ground state and the excited state is clearly observed in the phosphorescence spectrum, the T1 level can also be calculated using the 0 → 0 band. (Nicholas J. Turro, V. Ramamurthy, J.C. Scaiano, "MODERN MOLECULAR PHOTOCHEMISTRY OF ORGANIC MOLECULES", UNIVERSITY SCIENCE BOOKS, published on February 10, 2010, pp. 204-208). When comparing levels, the comparison shall be made for levels calculated by the same method.

[0048] In this specification, the lowest triplet excitation energy level (T1 level) may be calculated by measuring the emission spectrum (phosphorescence spectrum) at a measurement temperature of 10 K using a thin film formed by depositing 50 nm of the sample on a quartz substrate. The measurement may be performed using a microscopic PL apparatus LabRAM HR-PL (manufactured by Horiba, Ltd.) and using a He-Cd laser (325 nm) as the excitation light. The emission end may be calculated from the intersection of the tangent drawn at the value where the slope on the short-wavelength side of the peak (or shoulder peak) observed at the shortest wavelength of the emission spectrum (phosphorescence spectrum) is maximum with the horizontal axis (wavelength) or the baseline.

[0049] ≪Example 1 of Organic Compound≫ One aspect of the present invention is an organic compound represented by the general formula (G1).

[0050] [Chemical formula]

[0051] However, R 1 to R 8 each independently represents hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 6 carbon atoms, R 9 to R 11 each independently represents hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 6 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, X represents an oxygen atom or a sulfur atom, and A1 represents any one of the substituents represented by the following general formulas (A-1) to (A-5).

[0052] [Chemical formula]

[0053] However, R 12 to R 57 each independently represents hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 6 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms.

[0054] Specific examples of the alkyl group having 1 to 6 carbon atoms include methyl group, ethyl group, propyl group, isopropyl group, butyl group, sec-butyl group, isobutyl group, tert-butyl group, pentyl group, isopentyl group, sec-pentyl group, tert-pentyl group, neopentyl group, hexyl group, isohexyl group, 3-methylpentyl group, 2-methylpentyl group, 2-ethylbutyl group, 1,2-dimethylbutyl group, 2,3-dimethylbutyl group, and the like.

[0055] Specific examples of the cycloalkyl group having 3 to 6 carbon atoms include, for example, cyclopropyl group, cyclobutyl group, cyclopentyl group, cyclohexyl group, cycloheptyl group, cyclooctyl group, cyclononanil group, cyclodecyl group, cyclododecyl group. Also, examples of the cycloalkyl group having 4 to 10 carbon atoms and having a crosslinked structure include bicyclobutyl group, noradamantyl group, adamantyl group, norbornanyl group, and tetrahydrodicyclopentadienyl group.

[0056] Specific examples of the aryl group having 6 to 30 carbon atoms include, for example, phenyl group, tolyl group, xylyl group, biphenyl group, indenyl group, naphthyl group, fluorenyl group, spirofluorenyl group, phenanthrenyl group, and triphenylenyl group.

[0057] Specific examples of the heteroaryl group having 1 to 30 carbon atoms include, for example, groups having a triazine ring, pyrimidine ring, pyridine ring, phenanthroline ring, carbazole ring, dibenzofuran ring, dibenzothiophene ring, benzonaphthofuran ring, benzonaphthothiophene ring, indolocarbazole ring, benzofluorocarbazole ring, benzothienocarbazole ring, indenocarbazole ring, and dibenzocarbazole ring.

[0058] In the general formula (G1) and the general formulas (A-1) to (A-5), hydrogen may be appropriately replaced with deuterium.

[0059] <Specific examples> Next, specific examples of the organic compound which is one embodiment of the present invention and has the structure represented by the general formula (G1) are shown below.

[0060]

Chemical formula

[0061]

Chemical formula

[0062] The organic compounds represented by the above structural formulas (100) to (114) and the above structural formulas (200) to (214) are examples of the organic compounds represented by the above general formula (G1), but the organic compounds of one aspect of the present invention are not limited thereto.

[0063] <Synthesis method of organic compound> Hereinafter, a method for synthesizing the organic compound represented by the general formula (G1) will be described. As the method for synthesizing the organic compound, various reactions can be applied.

[0064]

Chemical formula

[0065] Note that the organic compound represented by the above general formula (G1) can be obtained by reacting a dihalogen compound (B1) containing a benzofuro[3,2-d]pyrimidine skeleton or a benzothieno[3,2-d]pyrimidine skeleton with a carbazole compound (B2) as shown in the following synthesis scheme (S-1), and then reacting the intermediate (B3) with the boronic acid compound (B4) of A1.

[0066]

Chemical formula

[0067] In the above general formula (B1), X represents an oxygen atom or a sulfur atom, and Y1 and Y2 represent a halogen. Also, R 1 to R 8 each independently represents hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, or a substituted or unsubstituted cycloalkyl group having 3 to 6 carbon atoms, and R 9 to R 11Each independently represents hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 6 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, and A1 represents any of the substituents represented by general formula (A-1) to general formula (A-5). Further, Q represents boric acid, a boronic acid ester, a cyclic triol borate salt, or the like. In addition to the lithium salt, potassium salts and sodium salts may be used as the cyclic triol borate salt.

[0068]

Chemical formula

[0069] Examples of the palladium catalyst that can be used in the coupling reaction represented by the above synthesis scheme (S-1) include palladium(II) acetate, tetrakis(triphenylphosphine)palladium(0), bis(triphenylphosphine)palladium(II) dichloride, allylpalladium(II) chloride (dimer), and the like.

[0070] Examples of the ligand of the above palladium catalyst include di(1-adamantyl)-n-butylphosphine, (±)-2,2'-bis(diphenylphosphino)-1,1'-binaphthyl, tri(o-tolyl)phosphine, triphenylphosphine, tricyclohexylphosphine, di-tert-butyl(2,2-diphenyl-1-methyl-1-cyclopropyl)phosphine, and the like.

[0071] Examples of the base that can be used in the coupling reaction represented by the above synthesis scheme (S-1) include organic bases such as potassium tert-butoxide, and inorganic bases such as potassium carbonate, sodium carbonate, and tripotassium phosphate.

[0072] In the coupling reaction represented by the above synthesis scheme (S-1), solvents that can be used include toluene, xylene, mesitylene, benzene, tetrahydrofuran, dioxane, diethylene glycol dimethyl ether, and the like. However, the solvents that can be used are not limited to these.

[0073] In addition, the reaction carried out in the above synthesis scheme (S-1) is not limited to the Suzuki-Miyaura reaction or the Buchwald-Hartwig reaction. Other reactions such as the Migita-Kosugi-Stille coupling reaction using an organotin compound, the coupling reaction using a Grignard reagent, the Ullmann reaction using copper or a copper compound, and nucleophilic substitution reactions can also be used.

[0074] In addition, the above compounds (B1), (B2), and (B4) have various types and can be synthesized.

[0075] The organic compound of one aspect of the present invention can be synthesized as described above, but the present invention is not limited thereto, and it may be synthesized by other synthesis methods.

[0076] This embodiment can be arbitrarily combined and used with other embodiments and examples.

[0077] (Embodiment 2) In this embodiment, the configuration of a light-emitting device using the organic compound shown in Embodiment 1 will be described.

[0078] Displays (organic EL displays) using organic EL elements (hereinafter also referred to as light-emitting devices) as display elements have been in practical use for a long time. In order to achieve full-color display, such displays usually include pixels that emit light of at least three colors: red, green, and blue.

[0079] For each pixel, a light-emitting device is provided for each emission color. In a Side by Side type, so-called painted type display, each light-emitting device has a different light-emitting substance according to the emission color of the corresponding pixel.

[0080] Here, in an organic EL device with current excitation, the generation probabilities of the singlet excited state and the triplet excited state are 1:3. It is known that the theoretical limit of the internal quantum efficiency of a light-emitting device using a fluorescent material that can only use the singlet excited state for light emission is 25%. On the other hand, since a phosphorescent material can convert the singlet excited state to the triplet excited state by intersystem crossing, a light-emitting device showing a theoretical internal quantum efficiency of 100% can be realized, and a light-emitting device with higher luminous efficiency than a fluorescent material can be obtained.

[0081] Also, when using an organic compound (also called a host material) for dispersing a light-emitting substance in the light-emitting layer, the host material needs to be a substance having a triplet excited energy level and a singlet excited energy level higher than the triplet excited energy level and the singlet excited energy level of the light-emitting substance (also called a guest material). On the other hand, since the blue emission energy is higher than that of red or green, the host material for dispersing a blue light-emitting substance is required to have a triplet excited energy level and a singlet excited energy level higher than those of red or green devices. Therefore, the range of material selection is narrow, and it is difficult to obtain a material with good performance.

[0082] One aspect of the present invention provides a light-emitting device using a phosphorescent material as a light-emitting substance and using the organic compound described in Embodiment 1 as a host material. The configuration of the light-emitting device according to one aspect of the present invention will be described below.

[0083] <Configuration example of the light-emitting device> FIG. 1(A) is a schematic cross-sectional view of a light-emitting device 10 according to an aspect of the present invention. The light-emitting device 10 has a pair of electrodes (a first electrode 101 and a second electrode 102), and has an organic compound layer 103 provided between the pair of electrodes. The organic compound layer 103 has at least a light-emitting layer 113.

[0084] In addition, the organic compound layer 103 shown in FIG. 1(A) has functional layers such as a hole injection layer 111, a hole transport layer 112, an electron transport layer 114, and an electron injection layer 115 in addition to the light-emitting layer 113.

[0085] In the present embodiment, among the pair of electrodes, the first electrode 101 is described as an anode and the second electrode 102 is described as a cathode. However, the configuration of the light-emitting device 10 is not limited to this. That is, the first electrode 101 may be a cathode, the second electrode 102 may be an anode, and the lamination of each layer between the electrodes may be in the reverse order. That is, from the anode side, the hole injection layer 111, the hole transport layer 112, the light-emitting layer 113, the electron transport layer 114, and the electron injection layer 115 may be laminated in this order.

[0086] Note that the configuration of the organic compound layer 103 is not limited to the configuration shown in FIG. 1(A), and may be a configuration having at least one selected from the hole injection layer 111, the hole transport layer 112, the electron transport layer 114, and the electron injection layer 115. Alternatively, the organic compound layer 103 may be configured to have a functional layer having a function such as reducing a hole or electron injection barrier, improving hole or electron transportability, inhibiting hole or electron transportability, or suppressing a quenching phenomenon by an electrode. Note that each functional layer may be a single layer or a configuration in which a plurality of layers are laminated.

[0087] FIG. 1(B) is a schematic cross-sectional view showing an example of the light-emitting layer 113 shown in FIG. 1(A). The light-emitting layer 113 shown in FIG. 1(B) has a host material 118 (organic compound 118_1 and organic compound 118_2) and a guest material 119 (light-emitting substance).

[0088] As the guest material 119, a light-emitting organic compound may be used, and it is preferable that the light-emitting organic compound be a substance capable of emitting phosphorescence (hereinafter also referred to as a phosphorescent compound).

[0089] In the light-emitting layer 113, the host material 118 is present in the largest amount by weight, and the guest material 119 is dispersed in the host material 118. As described above, it is preferable that the lowest triplet excitation energy level (T1 level) of the host material 118 (organic compound 118_1 and organic compound 118_2) in the light-emitting layer 113 be higher than the T1 level of the guest material 119 in the light-emitting layer 113.

[0090] Specifically, for example, when a phosphorescent compound exhibiting blue color is used as the guest material 119, it is preferable that the lowest triplet excitation energy level (T1 level) of at least the organic compound 118_1 be 2.75 eV or more and 2.95 eV or less.

[0091] In addition, it is preferable that the host material 118 (organic compound 118_1 and organic compound 118_2) in the light-emitting layer 113 form an exciplex (also referred to as an exciplex, exiplex, or Exciplex). The exciplex is an excited state composed of two or more substances, and in the case of photoexcitation, it is formed by the interaction of one substance in the excited state with the other substance in the ground state.

[0092] Specifically, for example, when a phosphorescent compound exhibiting blue color is used as the guest material 119, if the absolute value of the difference between the LUMO level of the organic compound 118_1 and the HOMO level of the organic compound 118_2 is 2.70 eV or less, it is difficult to form an exciplex in which the emission spectrum (PL spectrum) overlaps with the absorption spectrum of the guest material 119. Also, when the LUMO level of the organic compound 118_1 is too low, an exciplex with a small energy is formed between the HOMO level of the guest material 119 and the LUMO level of the organic compound 118_1, and the emission spectrum may be broadened.

[0093] Therefore, by reducing the intermolecular interaction between the organic compound 118_1 and the guest material 119, a sharp emission spectrum can be obtained.

[0094] Therefore, the lowest triplet excitation energy level (T1 level) of the organic compound 118_1 is 2.75 eV or more and 2.95 eV or less, and the absolute value of the difference between the LUMO level of the organic compound 118_1 and the HOMO level of the organic compound 118_2 is 2.75 eV or more and 2.85 eV or less, preferably 2.78 eV or more and 2.85 eV or less. By configuring the light-emitting device in this way, a light-emitting device that exhibits good blue color can be provided.

[0095] An organic compound having a benzofuro[3,2-d]pyrimidine skeleton or a benzothieno[3,2-d]pyrimidine skeleton, a first substituent, and a second substituent, which is one aspect of the present invention described in Embodiment 1, wherein the first substituent represents a carbazole skeleton, and the second substituent represents any of a carbazole skeleton, a dibenzofuran skeleton, a tetraphenylsilane skeleton, or a triphenylene skeleton, the first substituent is bonded to the 4-position of the benzofuro[3,2-d]pyrimidine skeleton or the benzothieno[3,2-d]pyrimidine skeleton, and the second substituent is bonded to the 8-position of the benzofuro[3,2-d]pyrimidine skeleton or the benzothieno[3,2-d]pyrimidine skeleton can be used as the organic compound 118_1.

[0096] In particular, in the organic compound represented by the general formula (G1), by making the 2-position of the benzofuro[3,2-d]pyrimidine skeleton or the benzothieno[3,2-d]pyrimidine skeleton hydrogen, it is possible to suppress the increase in the bulkiness of the organic compound. Therefore, it becomes easier to interact with the organic compound 118_2, and the formation of an exciplex becomes easier.

[0097] In addition, in the organic compound represented by the general formula (G1), by having a substituent at the 8-position of the benzofuro[3,2-d]pyrimidine skeleton or the benzothieno[3,2-d]pyrimidine skeleton, while maintaining a high triplet excitation energy level (T1 level), the thermal properties can be improved and the stability of the molecule can be enhanced, so that the reliability of the light-emitting device can be increased.

[0098] <Basic Structure of Light-Emitting Device> Hereinafter, the basic structure of a more detailed light-emitting device will be described with reference to FIGS. 2(A) to 2(E). FIG. 2(A) shows a light-emitting device having a structure (single structure) with an organic compound layer (also referred to as an EL layer) containing a light-emitting layer between a pair of electrodes. Specifically, it has a structure in which an organic compound layer 103 is sandwiched between a first electrode 101 and a second electrode 102.

[0099] Further, FIG. 2(B) shows a light-emitting device having a stacked structure (tandem structure) with a plurality of (two layers in FIG. 2(B)) organic compound layers (103a, 103b) between a pair of electrodes and having a charge generation layer 106 between the organic compound layers. The tandem structure light-emitting device can realize a highly efficient light-emitting device without changing the current amount.

[0100] The charge generation layer 106 has a function of injecting electrons into one organic compound layer (103a or 103b) and injecting holes into the other organic compound layer (103b or 103a) when a potential difference is generated between the first electrode 101 and the second electrode 102. Therefore, in FIG. 2(B), when a voltage is applied to the first electrode 101 so that the potential is higher than that of the second electrode 102, electrons are injected from the charge generation layer 106 into the organic compound layer 103a, and holes are injected into the organic compound layer 103b.

[0101] Note that the charge generation layer 106 preferably has light transmittance with respect to visible light (specifically, the transmittance of visible light with respect to the charge generation layer 106 is 40% or more) from the viewpoint of light extraction efficiency. In addition, the charge generation layer 106 can function even with a lower conductivity than that of the first electrode 101 and the second electrode 102.

[0102] Further, FIG. 2(C) shows the laminated structure of the organic compound layer 103 of the light-emitting device which is one aspect of the present invention. However, in this case, it is assumed that the first electrode 101 functions as an anode and the second electrode 102 functions as a cathode. The organic compound layer 103 has a structure in which a hole injection layer 111, a hole transport layer 112, a light-emitting layer 113, an electron transport layer 114, and an electron injection layer 115 are sequentially laminated on the first electrode 101. Note that the light-emitting layer 113 may have a structure in which a plurality of light-emitting layers having different emission colors are laminated. For example, a light-emitting layer containing a light-emitting substance exhibiting red, a light-emitting layer containing a light-emitting substance exhibiting green, and a light-emitting layer containing a light-emitting substance exhibiting blue may be laminated, or may be laminated via a layer having a carrier transporting property. Alternatively, a combination of a light-emitting layer containing a light-emitting substance emitting yellow and a light-emitting layer containing a light-emitting substance exhibiting blue may be used. However, the laminated structure of the light-emitting layer 113 is not limited to the above. For example, the light-emitting layer 113 may have a structure in which a plurality of light-emitting layers having the same emission color are laminated. For example, a first light-emitting layer containing a light-emitting substance exhibiting blue and a second light-emitting layer containing a light-emitting substance exhibiting blue may be laminated, or may be laminated via a layer having a carrier transporting property. In the case of a structure in which a plurality of light-emitting layers having the same emission color are laminated, the reliability may be improved as compared with a single-layer structure. Further, even in the case of having a plurality of light-emitting layers as in the tandem structure shown in FIG. 2(B), each light-emitting layer has a structure in which the above-mentioned layers are sequentially laminated from the anode side. Further, when the first electrode 101 is a cathode and the second electrode 102 is an anode, the lamination order of the organic compound layer 103 is reversed. Specifically, 111 on the first electrode 101 which is a cathode has a structure in which 111 is an electron injection layer, 112 is an electron transport layer, 113 is a light-emitting layer, 114 is a hole transport layer, and 115 is a hole injection layer.

[0103] The light-emitting layer 113 included in the organic compound layers (103, 103a, 103b) has a light-emitting substance and a plurality of substances appropriately combined, respectively, and can be configured to obtain fluorescence emission or phosphorescence emission that exhibits a desired emission color. Further, the light-emitting layer 113 may have a laminated structure with different emission colors. In this case, different materials may be used for the light-emitting substance and other substances used in each of the laminated light-emitting layers. Also, a configuration may be adopted in which different emission colors can be obtained from the plurality of organic compound layers (103a, 103b) shown in FIG. 2(B). In this case as well, different materials may be used for the light-emitting substance and other substances used in each light-emitting layer.

[0104] Further, in the light-emitting device which is one aspect of the present invention, for example, by using the first electrode 101 shown in FIG. 2(C) as a reflective electrode, the second electrode 102 as a semi-transmissive / semi-reflective electrode, and adopting a microcavity structure, the light emission obtained from the light-emitting layer 113 included in the organic compound layer 103 can be resonated between both electrodes, and the light emission emitted from the second electrode 102 can be enhanced. Therefore, it is easy to achieve high definition. Also, since it is possible to enhance the emission intensity in the front direction of a specific wavelength, power consumption can be reduced.

[0105] When the first electrode 101 of the light-emitting device is a reflective electrode having a laminated structure of a conductive material having reflectivity and a conductive material having translucency (transparent conductive film), optical adjustment can be performed by controlling the film thickness of the transparent conductive film. Specifically, it is preferable to adjust so that the optical distance (product of film thickness and refractive index) between the first electrode 101 and the second electrode 102 becomes mλ / 2 (where m is an integer of 1 or more) or in the vicinity thereof with respect to the wavelength λ of the light obtained from the light-emitting layer 113.

[0106] In addition, in order to amplify the desired light (wavelength: λ) obtained from the light-emitting layer 113, the optical distance from the first electrode 101 to the region (light-emitting region) where the desired light of the light-emitting layer 113 is obtained, and the optical distance from the second electrode 102 to the region (light-emitting region) where the desired light of the light-emitting layer 113 is obtained are each preferably adjusted to be (2m'+1)λ / 4 (where m' is an integer of 1 or more) or in the vicinity thereof. Here, the light-emitting region refers to the recombination region of holes and electrons in the light-emitting layer 113.

[0107] By performing such optical adjustment, the spectrum of specific monochromatic light obtained from the light-emitting layer 113 can be narrowed, and light emission with good color purity can be obtained.

[0108] However, in the above case, the optical distance between the first electrode 101 and the second electrode 102 can strictly be said to be the total thickness from the reflection region in the first electrode 101 to the reflection region in the second electrode 102. However, since it is difficult to strictly determine the reflection regions in the first electrode 101 and the second electrode 102, it is assumed that any positions of the first electrode 101 and the second electrode 102 are reflection regions, and it is considered that the above-described effects can be sufficiently obtained. Further, the optical distance between the first electrode 101 and the light-emitting layer from which the desired light is obtained can strictly be said to be the optical distance between the reflection region in the first electrode 101 and the light-emitting region in the light-emitting layer from which the desired light is obtained. However, since it is difficult to strictly determine the reflection region in the first electrode 101 and the light-emitting region in the light-emitting layer from which the desired light is obtained, it is assumed that any position of the first electrode 101 is the reflection region and any position of the light-emitting layer from which the desired light is obtained is the light-emitting region, and it is considered that the above-described effects can be sufficiently obtained.

[0109] The light-emitting device shown in FIG. 2(D) is a light-emitting device having a tandem structure. By adopting the tandem structure, a light-emitting device capable of high-brightness light emission can be obtained. In addition, compared with a single structure, the tandem structure can reduce the current required to obtain the same luminance, so that the reliability can be improved. Further, the power consumption can be reduced.

[0110] The light-emitting device shown in Fig. 2(E) is an example of the tandem-structured light-emitting device shown in Fig. 2(B). As shown in the figure, it has a structure in which three organic compound layers (103a, 103b, 103c) are stacked with charge generation layers (106a, 106b) interposed therebetween. Each of the three organic compound layers (103a, 103b, 103c) has a light-emitting layer (113a, 113b, 113c), and the emission colors of the respective light-emitting layers can be freely combined. For example, the light-emitting layer 113a can be blue, the light-emitting layer 113b can be any of red, green, or yellow, and the light-emitting layer 113c can be blue. However, the light-emitting layer 113a can also be red, the light-emitting layer 113b can be any of blue, green, or yellow, and the light-emitting layer 113c can be red.

[0111] In the light-emitting device which is one aspect of the present invention described above, at least one of the first electrode 101 and the second electrode 102 is an electrode having translucency (such as a transparent electrode, a semi-transmissive / semi-reflective electrode, etc.). When the electrode having translucency is a transparent electrode, the transmittance of visible light of the transparent electrode is 40% or more. Also, in the case of a semi-transmissive / semi-reflective electrode, the reflectance of visible light of the semi-transmissive / semi-reflective electrode is 20% or more and 80% or less, preferably 40% or more and 70% or less. Also, these electrodes preferably have a resistivity of 1×10 -2 Ω·cm or less.

[0112] Also, in the light-emitting device which is one aspect of the present invention described above, when one of the first electrode 101 and the second electrode 102 is an electrode having reflectivity (reflective electrode), the reflectance of visible light of the electrode having reflectivity is 40% or more and 100% or less, preferably 70% or more and 100% or less. Also, this electrode preferably has a resistivity of 1×10 -2 Ω·cm or less.

[0113] <Specific structure of the light-emitting device> Next, the specific structure of the light-emitting device according to one aspect of the present invention will be described. Here, the description will be made using FIG. 2(D) having a tandem structure. Note that the composition of the organic compound layer for the single-structure light-emitting devices shown in FIGS. 2(A) and 2(C) is the same. When the light-emitting device shown in FIG. 2(D) has a microcavity structure, the first electrode 101 is formed as a reflective electrode, and the second electrode 102 is formed as a semi-transmissive / semi-reflective electrode. Therefore, a desired electrode material can be used singly or in plurality and formed by being single-layered or laminated. Note that the second electrode 102 is formed by appropriately selecting a material after forming the organic compound layer 103b.

[0114] <Materials of the light-emitting device> ≪Light-emitting layer≫ The light-emitting layers (113, 113a, 113b) are layers containing a light-emitting substance. Note that as the light-emitting substance that can be used for the light-emitting layers (113, 113a, 113b), substances that exhibit light-emitting colors such as blue, purple, blue-violet, green, yellow-green, yellow, orange, and red can be appropriately used. In addition, when there are a plurality of light-emitting layers, a configuration in which different light-emitting colors are exhibited by using different light-emitting substances for each light-emitting layer (for example, white light emission obtained by combining light-emitting colors in a complementary color relationship) can be employed. Furthermore, one light-emitting layer may have a laminated structure having different light-emitting substances.

[0115] In addition, the light-emitting layers (113, 113a, 113b) may have one or more kinds of organic compounds (host materials, etc.) in addition to the light-emitting substance (guest material).

[0116] Specifically, as the light-emitting layer 113, the structure described with reference to FIG. 1(B) of Embodiment 1 can be used. In the light-emitting layer 113, the host material 118 is present in the largest amount by weight ratio, and the guest material 119 (phosphorescent compound) is dispersed in the host material 118. It is preferable that the T1 level of the host material 118 (organic compound 118_1 and organic compound 118_2) of the light-emitting layer 113 is higher than the T1 level of the guest material (guest material 119) of the light-emitting layer 113.

[0117] As the organic compound 118_1, a material with higher electron transportability than hole transportability can be used, and it is preferably a material having an electron mobility of 1×10 -6 cm 2 / Vs or more. As a material that easily accepts electrons (a material having electron transportability), compounds having a π-electron deficient heteroaromatic ring skeleton such as nitrogen-containing heteroaromatic compounds, and zinc or aluminum-based metal complexes can be used. Examples of compounds having a π-electron deficient heteroaromatic ring skeleton include compounds such as oxadiazole derivatives, triazole derivatives, benzimidazole derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, phenanthroline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, and triazine derivatives. Examples of zinc or aluminum-based metal complexes include metal complexes having a quinoline ligand, a benzoquinoline ligand, an oxazole ligand, or a thiazole ligand.

[0118] Specifically, for example, metal complexes having a quinoline skeleton or a benzoquinoline skeleton such as tris(8-quinolinolato)aluminum(III) (abbreviation: Alq), tris(4-methyl-8-quinolinolato)aluminum(III) (abbreviation: Almq3), bis(10-hydroxybenzo[h]quinolinato)beryllium(II) (abbreviation: BeBq2), bis(2-methyl-8-quinolinolato)(4-phenylphenolato)aluminum(III) (abbreviation: BAlq), bis(8-quinolinolato)zinc(II) (abbreviation: Znq), etc. can be mentioned. In addition, other metal complexes having oxazole-based or thiazole-based ligands such as bis[2-(2-benzoxazolyl)phenolato]zinc(II) (abbreviation: ZnPBO), bis[2-(2-benzothiazolyl)phenolato]zinc(II) (abbreviation: ZnBTZ), etc. can also be used. Furthermore, in addition to metal complexes, 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviation: PBD), 1,3-bis[5-(p-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]benzene (abbreviation: OXD-7), 9-[4-(5-phenyl-1,3,4-oxadiazol-2-yl)phenyl]-9H-carbazole (abbreviation: CO11), 3-(4-biphenylyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole (abbreviation: TAZ), 9-[4-(4,5-diphenyl-4H-1,2,4-triazol-3-yl)phenyl]-9H-carbazole (abbreviation: CzTAZ1), 2,2’,2’’-(1,3,5-benzenetriyl)tris(1-phenyl-1H-benzimidazole) (abbreviation: TPBI), 2-[3-(dibenzothiophen-4-yl)phenyl]-1-phenyl-1H-benzimidazole (abbreviation: mDBTBIm-II), heterocyclic compounds such as bathophenanthroline (abbreviation: BPhen), bathocuproine (abbreviation: BCP), etc., 2-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTPDBq-II), 2-[3’-(dibenzothiophen-4-yl)biphenyl-3-yl]dibenzo[f,h]Quinoxaline (abbreviation: 2mDBTBPDBq-II), 2-[3’-(9H-carbazol-9-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mCzBPDBq), 2-[4-(3,6-diphenyl-9H-carbazol-9-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2CzPDBq-III), 7-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 7mDBTPDBq-II), and 6-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 6mDBTPDBq-II), 2-[3-(3,9’-bi-9H-carbazol-9-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2mCzCzPDBq), 4,6-bis[3-(phenanthren-9-yl)phenyl]pyrimidine (abbreviation: 4,6mPnP2Pm), 4,6-bis[3-(dibenzothiophen-4-yl)phenyl]pyrimidine (abbreviation: 4,6mDBTP2Pm-II), 4,6-bis[3-(9H-carbazol-9-yl)phenyl]pyrimidine (abbreviation: 4,6mCzP2Pm), and other heterocyclic compounds having a diazine skeleton, 2-{4-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn) and other heterocyclic compounds having a triazine skeleton, 3,5-bis[3-(9H-carbazol-9-yl)phenyl]pyridine (abbreviation: 35DCzPPy), 1,3,5-tri[3-(3-pyridyl)phenyl]benzene (abbreviation: TmPyPB) and other heterocyclic compounds having a pyridine skeleton, 4,4’-bis(5-methylbenzoxazol-2-yl)stilbene (abbreviation: BzOs) and other heteroaromatic compounds can also be used. Among the above-mentioned heterocyclic compounds, heterocyclic compounds having a triazine skeleton, a diazine (pyrimidine, pyrazine, pyridazine) skeleton, or a pyridine skeleton are stable and have good reliability and are preferred. In addition, the heterocyclic compounds having such a skeleton have high electron transport properties and also contribute to reducing the driving voltage. Also, poly(2,5-pyridinediyl) (abbreviation: PPy), poly[(9,9-dihexylfluorene-2,7-diyl)-co-(pyridine-3,It is also possible to use polymer compounds such as poly[(9,9-dioctylfluorene-2,7-diyl)] (abbreviation: PF-Py), poly[(9,9-dioctylfluorene-2,7-diyl)-co-(2,2'-bipyridine-6,6'-diyl)] (abbreviation: PF-BPy). The substances described here mainly have an electron mobility of 1×10, -6 cm 2 / Vs or higher. As long as the substance has higher electron transportability than holes, substances other than the above can also be used.

[0119] For example, as the organic compound 118_1, organic compounds represented by the following structural formulas (400) to (415) can be used.

[0120]

Chemical formula

[0121]

Chemical formula

[0122] As the organic compound 118_2, a combination capable of forming an exciplex with the organic compound 118_1 is preferable. Specifically, it preferably has a highly donor-like skeleton such as a π-electron excess type heteroaromatic ring skeleton or an aromatic amine skeleton. Examples of the compound having a π-electron excess type heteroaromatic ring skeleton include heteroaromatic compounds such as dibenzothiophene derivatives, dibenzofuran derivatives, and carbazole derivatives. In this case, it is preferable to select the organic compound 118_1, the organic compound 118_2, and the guest material 119 (phosphorescent compound) such that the emission peak of the exciplex formed by the organic compound 118_1 and the organic compound 118_2 overlaps with the absorption band of the triplet MLCT (Metal to Ligand Charge Transfer) transition of the guest material 119 (phosphorescent compound), more specifically, the absorption band located at the longest wavelength. Thereby, a light-emitting device with a dramatically improved luminous efficiency can be obtained. However, when a thermally activated delayed fluorescence material is used instead of the phosphorescent compound, the absorption band located at the longest wavelength is preferably a singlet absorption band.

[0123] In addition, as the organic compound 118_2, the following hole transporting materials can be used.

[0124] As the hole transporting material, a material with higher hole transportability than electrons can be used, and it is preferably a material having a hole mobility of 1×10 -6 cm 2 / Vs or more. Specifically, aromatic amines, carbazole derivatives, aromatic hydrocarbons, stilbene derivatives, etc. can be used. Further, the hole transporting material may be a polymer compound.

[0125] As these materials with high hole-transporting properties, specifically, as aromatic amine compounds, N,N'-di(p-tolyl)-N,N'-diphenyl-p-phenylenediamine (abbreviation: DTDPPA), 4,4'-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation: DPAB), N,N'-bis[4-bis(3-methylphenyl)aminophenyl]-N,N'-diphenyl-4,4'-diaminobiphenyl (abbreviation: DNTPD), 1,3,5-tris[N-(4-diphenylaminophenyl)-N-phenylamino]benzene (abbreviation: DPA3B), etc. can be mentioned.

[0126] Also, as carbazole derivatives, specifically, 3-[N-(4-diphenylaminophenyl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzDPA1), 3,6-bis[N-(4-diphenylaminophenyl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzDPA2), 3,6-bis[N-(4-diphenylaminophenyl)-N-(1-naphthyl)amino]-9-phenylcarbazole (abbreviation: PCzTPN2), 3-[N-(9-phenylcarbazol-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA1), 3,6-bis[N-(9-phenylcarbazol-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA2), 3-[N-(1-naphthyl)-N-(9-phenylcarbazol-3-yl)amino]-9-phenylcarbazole (abbreviation: PCzPCN1), etc. can be mentioned.

[0127] Also, as carbazole derivatives, among others, 4,4'-di(9H-carbazol-9-yl)biphenyl (abbreviation: CBP), 1,3,5-tris[4-(N-carbazolyl)phenyl]benzene (abbreviation: TCPB), 9-[4-(10-phenyl-9-anthracenyl)phenyl]-9H-carbazole (abbreviation: CzPA), 1,4-bis[4-(N-carbazolyl)phenyl]-2,3,5,6-tetraphenylbenzene, etc. can be used.

[0128] Examples of the aromatic hydrocarbon include 2-tert-butyl-9,10-di(2-naphthyl)anthracene (abbreviation: t-BuDNA), 2-tert-butyl-9,10-di(1-naphthyl)anthracene, 9,10-bis(3,5-diphenylphenyl)anthracene (abbreviation: DPPA), 2-tert-butyl-9,10-bis(4-phenylphenyl)anthracene (abbreviation: t-BuDBA), 9,10-di(2-naphthyl)anthracene (abbreviation: DNA), 9,10-diphenylanthracene (abbreviation: DPAnth), 2-tert-butylanthracene (abbreviation: t-BuAnth), 9,10-bis(4-methyl-1-naphthyl)anthracene (abbreviation: DMNA), 2-tert-butyl-9,10-bis[2-(1-naphthyl)phenyl]anthracene, 9,10-bis[2-(1-naphthyl)phenyl]anthracene, 2,3,6,7-tetramethyl-9,10-di(1-naphthyl)anthracene, 2,3,6,7-tetramethyl-9,10-di(2-naphthyl)anthracene, 9,9'-bianthryl, 10,10'-diphenyl-9,9'-bianthryl, 10,10'-bis(2-phenylphenyl)-9,9'-bianthryl, 10,10'-bis[(2,3,4,5,6-pentaphenyl)phenyl]-9,9'-bianthryl, anthracene, tetracene, rubrene, perylene, 2,5,8,11-tetra(tert-butyl)perylene, etc. In addition, pentacene, coronene, etc. can also be used. Thus, it is more preferable to use an aromatic hydrocarbon having a hole mobility of 1×10 -6 cm 2 / Vs or more and having 14 or more and 42 or less carbon atoms.

[0129] Note that the aromatic hydrocarbon may have a vinyl skeleton. Examples of the aromatic hydrocarbon having a vinyl skeleton include 4,4'-bis(2,2-diphenylvinyl)biphenyl (abbreviation: DPVBi), 9,10-bis[4-(2,2-diphenylvinyl)phenyl]anthracene (abbreviation: DPVPA), etc.

[0130] In addition, high molecular compounds such as poly(N-vinylcarbazole) (abbreviation: PVK), poly(4-vinyltriphenylamine) (abbreviation: PVTPA), poly[N-(4-{N’-[4-(4-diphenylamino)phenyl]phenyl-N’-phenylamino}phenyl)methacrylamide] (abbreviation: PTPDMA), or poly[N,N’-bis(4-butylphenyl)-N,N’-bis(phenyl)benzidine] (abbreviation: Poly-TPD) can also be used.

[0131] Furthermore, examples of materials with high hole transport properties include 4,4'-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviation: NPB or α-NPD), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-4,4'-diaminobiphenyl (abbreviation: TPD), 4,4',4''-tris(carbazol-9-yl)triphenylamine (abbreviation: TCTA), 4,4',4''-tris[N-(1-naphthyl)-N-phenylamino]triphenylamine (abbreviation: 1'-TNATA), 4,4',4''-tris(N,N-diphenylamino)triphenylamine (abbreviation: TDATA), 4,4',4''-tris[N-(3-methylphenyl)-N-phenylamino]triphenylamine (abbreviation: m-MTDATA), N,N'-bis(9,9'-spirobi[9H-fluorene]-2-yl)-N,N'-diphenyl-4,4'-diaminobiphenyl (abbreviation: BSPB), 4-phenyl-4'-(9-phenylfluorene-9-yl)triphenylamine (abbreviation: BPAFLP), 4-phenyl-3'-(9-phenylfluorene-9-yl)triphenylamine (abbreviation: mBPAFLP), N-(9,9-dimethyl-9H-fluorene-2-yl)-N-{9,9-dimethyl-2-[N'-phenyl-N'-(9,9-dimethyl-9H-fluorene-2-yl)amino]-9H-fluorene-7-yl}phenylamine (abbreviation: DFLADFL), N-(9,9-dimethyl-2-diphenylamino-9H-fluorene-7-yl)diphenylamine (abbreviation: DPNF), N-(9,9-spirobi[9H-fluorene]-2-yl)-N,N'N'-triphenyl-1,4-phenylenediamine (abbreviation: DPASF), 4-phenyl-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBA1BP), 4,4'-diphenyl-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBBi1BP), 4-(1-naphthyl)-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBANB), 4,4'-bis(1-naphthyl)-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBNBB), 4-phenyldiphenyl-(9-phenyl-9H-carbazol-3-yl)amine (abbreviation: PCA1BP), N,N'-bis(9-phenylcarbazol-3-yl)-N,N'-diphenylbenzene-1,3-diamine (abbreviation: PCA2B), N,N',N''-triphenyl-N,N',N''-tris(9-phenylcarbazol-3-yl)benzene-1,3,5-triamine (abbreviation: PCA3B), N-(9,9-diphenyl-9H-fluoren-2-yl)-N,9-diphenyl-9H-carbazol-3-amine (abbreviation: PCAFLP(2)), N-(9,9-diphenyl-9H-fluoren-2-yl)-N,9-diphenyl-9H-carbazol-2-amine (abbreviation: PCAFLP(2)-02), N-(biphenyl-4-yl)-N-(9,9-dimethyl-9H-fluoren-2-yl)-9-phenyl-9H-carbazol-3-amine (abbreviation: PCBiF), N-(biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9-dimethyl-9H-fluoren-2-amine (abbreviation: PCBBiF), 9,9-dimethyl-N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]fluorene-2-amine (abbreviation: PCBAF), N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9'-spirobi[9H-fluorene]-2-amine (abbreviation: PCBASF), N-(9,9-spirobi[9H-fluorene]-2-yl)-N,9-diphenylcarbazol-3-amine (abbreviation: PCASF), N,N'-diphenyl-N,N'-bis(4-diphenylaminophenyl)spirobi[9H-fluorene]-2,7-diamine (abbreviation: DPA2SF), N-[4-(9H-carbazol-9-yl)phenyl]-N-(4-phenyl)phenylaniline (abbreviation: YGA1BP), N,N'-bis[4-(carbazol-9-yl)phenyl]-N,N'-diphenyl-9,9-dimethylfluorene-2,Aromatic amine compounds such as 7-diamine (abbreviation: YGA2F) can be used. In addition, 3-[4-(1-naphthyl)phenyl]-9-phenyl-9H-carbazole (abbreviation: PCPN), 9-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]phenanthrene (abbreviation: PCPPn), 3,3’-bis(9-phenyl-9H-carbazole) (abbreviation: PCCP), 1,3-bis(N-carbazolyl)benzene (abbreviation: mCP), 3,6-bis(3,5-diphenylphenyl)-9-phenylcarbazole (abbreviation: CzTP), 9’-phenyl-9’H-9,3’:6’,9’’-tercarbazole (abbreviation: PhCzGI), 2,8-di(9H-carbazol-9-yl)dibenzothiophene (abbreviation: Cz2DBT), 4-{3-[3-(9-phenyl-9H-fluoren-9-yl)phenyl]phenyl}dibenzofuran (abbreviation: mmDBFFLBi-II), 4,4’,4’’-(benzene-1,3,5-triyl)tri(dibenzofuran) (abbreviation: DBF3P-II), 4,4’,4’’-(benzene-1,3,5-triyl)tri(dibenzothiophene) (abbreviation: DBT3P-II), 2,8-diphenyl-4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]dibenzothiophene (abbreviation: DBTFLP-III), 4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]-6-phenyldibenzothiophene (abbreviation: DBTFLP-IV), 4-[3-(triphenylene-2-yl)phenyl]dibenzothiophene (abbreviation: mDBTPTp-II) and other amine compounds, carbazole compounds, thiophene compounds, furan compounds, fluorene compounds, triphenylene compounds, phenanthrene compounds, etc. can be used. Among the above-mentioned compounds, compounds having a pyrrole skeleton, a furan skeleton, a thiophene skeleton, and an aromatic amine skeleton are stable and have good reliability, and are preferable. In addition, the compounds having such a skeleton have high hole transportability and also contribute to reducing the driving voltage.,

[0132] Examples of the guest material 119 (phosphorescent compound) include iridium, rhodium, or platinum-based organometallic complexes, or metal complexes. Among them, as the metal complex, a platinum complex is preferable. Further examples include platinum complexes having a nitrogen-containing heterocyclic carbene. Also, an organoiridium complex, for example, an iridium-based orthometalated complex may be used. Examples of the ligand for orthometalation include 4H-triazole ligand, 1H-triazole ligand, imidazole ligand, pyridine ligand, pyrimidine ligand, pyrazine ligand, or isoquinoline ligand, etc.

[0133] Also, as the guest material 119 (phosphorescent compound), it is preferable to select the organic compound 118_1, the organic compound 118_2, and the guest material 119 (phosphorescent compound) such that the guest material 119 has a LUMO (Lowest Unoccupied Molecular Orbital) level higher than that of the organic compound 118_1 and a HOMO (Highest Occupied Molecular Orbital) level lower than that of the organic compound 118_2. Thereby, a light-emitting device with high luminous efficiency and capable of being driven at a low voltage can be obtained.

[0134] Also, as the guest material 119 (phosphorescent compound), it is preferable to select the organic compound 118_1, the organic compound 118_2, and the guest material 119 (phosphorescent compound) such that the guest material 119 has a LUMO level higher than that of the organic compound 118_1 and a HOMO level higher than that of the organic compound 118_2. Thereby, a light-emitting device with high luminous efficiency and capable of being driven at a low voltage can be obtained.

[0135] Further, as the guest material 119 (phosphorescent compound), it is preferable to select the organic compound 118_1 and the guest material 119 (phosphorescent compound) such that the energy difference between the LUMO level of the organic compound 118_1 and the HOMO level of the guest material 119 (phosphorescent compound) is equal to or greater than the energy calculated from the absorption edge located at the longest wavelength among the absorption edges in the absorption spectrum of the guest material 119 (phosphorescent compound). Thereby, a light-emitting device with high luminous efficiency and driven at a low voltage can be obtained.

[0136] Note that the absorption edge located at the longest wavelength in the absorption spectrum can be obtained by measuring the absorption spectrum of the target substance in a thin film state or a thin film obtained by doping the target substance in a matrix material, and using a Tauc plot assuming direct transition. Alternatively, the absorption spectrum of a solution of the target substance can be measured, a tangent can be drawn at the half-value on the long wavelength side of the peak or shoulder peak observed at the longest wavelength of the absorption spectrum, and the absorption edge can be calculated from the intersection of the tangent with the horizontal axis (wavelength) or the baseline. The solvent for the solution is not particularly limited, but relatively low-polarity solvents such as toluene and chloroform are preferred.

[0137] Note that the values of the HOMO level and the LUMO level used in this specification can be obtained by electrochemical measurement. Representative examples of electrochemical measurement include cyclic voltammetry (CV) measurement, differential pulse voltammetry (DPV) measurement, and the like.

[0138] In cyclic voltammetry (CV) measurement, the values (E) of the HOMO level and the LUMO level can be calculated based on the oxidation peak potential (E pa ) and the reduction peak potential (E pc ) obtained by changing the potential of the working electrode with respect to the reference electrode. In the measurement, the HOMO level is obtained from the positive potential scan, and the LUMO level is obtained from the negative potential scan. Also, the scan rate in the measurement is set to 0.1 V / s.

[0139] The specific calculation procedures for the HOMO level and the LUMO level will be described. From the oxidation peak potential (E pa ) and the reduction peak potential (E pc ) obtained from the cyclic voltammogram of the material, the standard redox potential (E o ) (=(E pa + E pc ) / 2) is determined, and by subtracting it from the potential energy (E x ) of the reference electrode with respect to the vacuum level, the values (E) of the HOMO level and the LUMO level (= Ex - Eo) can be determined respectively.

[0140] Note that the above shows the case where a reversible redox wave is obtained. When an irreversible redox wave is obtained, for the calculation of the HOMO level, a value obtained by subtracting a certain value (0.1 eV) from the oxidation peak potential (E pa ) is assumed to be the reduction peak potential (E pc ), and the standard redox potential (E o ) is determined to one decimal place. Also, for the calculation of the LUMO level, a value obtained by adding a certain value (0.1 eV) to the reduction peak potential (E pc ) is assumed to be the oxidation peak potential (E pa ), and the standard redox potential (E o ) is determined to one decimal place.

[0141] Examples of substances having an emission peak in the blue or green wavelength region include organometallic iridium complexes having a 4H-triazole skeleton such as tris{2-[5-(2-methylphenyl)-4-(2,6-dimethylphenyl)-4H-1,2,4-triazol-3-yl-κN2]phenyl-κC}iridium(III) (abbreviation: Ir(mpptz-dmp)3), tris(5-methyl-3,4-diphenyl-4H-1,2,4-triazolato)iridium(III) (abbreviation: Ir(Mptz)3), tris[4-(3-biphenyl)-5-isopropyl-3-phenyl-4H-1,2,4-triazolato]iridium(III) (abbreviation: Ir(iPrptz-3b)3), tris[3-(5-biphenyl)-5-isopropyl-4-phenyl-4H-1,2,4-triazolato]iridium(III) (abbreviation: Ir(iPr5btz)3); organometallic iridium complexes having a 1H-triazole skeleton such as tris[3-methyl-1-(2-methylphenyl)-5-phenyl-1H-1,2,4-triazolato]iridium(III) (abbreviation: Ir(Mptz1-mp)3), tris(1-methyl-5-phenyl-3-propyl-1H-1,2,4-triazolato)iridium(III) (abbreviation: Ir(Prptz1-Me)3); organometallic iridium complexes having an imidazole skeleton such as fac-tris[1-(2,6-diisopropylphenyl)-2-phenyl-1H-imidazole]iridium(III) (abbreviation: Ir(iPrpim)3), tris[3-(2,6-dimethylphenyl)-7-methylimidazo[1,2-f]phenanthridinato]iridium(III) (abbreviation: Ir(dmpimpt-Me)3); bis[2-(4’,6’-difluorophenyl)pyridinato-N,C 2’ iridium(III) tetrakis(1-pyrazolyl)borate (abbreviation: FIr6), bis[2-(4’,6’-difluorophenyl)pyridinato-N,C 2’ iridium(III) picolinate (abbreviation: FIrpic), bis{2-[3’,5’-bis(trifluoromethyl)phenyl]pyridinato-N,C 2’}Iridium(III) picolinate (abbreviation: Ir(CF3ppy)2(pic)), bis[2-(4’,6’-difluorophenyl)pyridinato-N,C 2’ Organometallic iridium complexes having a phenylpyridine derivative having an electron-withdrawing group such as iridium(III) acetylacetonate (abbreviation: FIr(acac)) as a ligand, (2-{3-[3-(3,5-di-tert-butylphenyl)benzimidazol-1-yl-2-ylidene-κC2]phenoxy-κC2}-9-(4-tert-butyl-2-pyridinyl-κN)carbazole-2,1-diyl-κC1)platinum(II) (abbreviation: PtON-TBBI) and the like. Among the above, organometallic iridium complexes or organoplatinum complexes having a nitrogen-containing five-membered heterocyclic skeleton such as a 4H-triazole skeleton, a 1H-triazole skeleton and an imidazole skeleton have high triplet excitation energy and are particularly preferable because of their excellent reliability or luminescence efficiency.

[0142] In addition, examples of substances having an emission peak in the green or yellow wavelength region include tris(4-methyl-6-phenylpyrimidinato)iridium(III) (abbreviation: Ir(mppm)3), tris(4-t-butyl-6-phenylpyrimidinato)iridium(III) (abbreviation: Ir(tBuppm)3), (acetylacetonato)bis(6-methyl-4-phenylpyrimidinato)iridium(III) (abbreviation: Ir(mppm)2(acac)), (acetylacetonato)bis(6-tert-butyl-4-phenylpyrimidinato)iridium(III) (abbreviation: Ir(tBuppm)2(acac)), (acetylacetonato)bis[4-(2-norbornyl)-6-phenylpyrimidinato]iridium(III) (abbreviation: Ir(nbppm)2(acac)), (acetylacetonato)bis[5-methyl-6-(2-methylphenyl)-4-phenylpyrimidinato]iridium(III) (abbreviation: Ir(mpmppm)2(acac)), (acetylacetonato)bis{4,6-dimethyl-2-[6-(2,6-dimethylphenyl)-4-pyrimidinyl-κN3]phenyl-κC}iridium(III) (abbreviation: Ir(dmppm-dmp)2(acac)), (acetylacetonato)bis(4,6-diphenylpyrimidinato)iridium(III) (abbreviation: Ir(dppm)2(acac)), organometallic iridium complexes having a pyrimidine skeleton such as these, (acetylacetonato)bis(3,5-dimethyl-2-phenylpyrazinato)iridium(III) (abbreviation: Ir(mppr-Me)2(acac)), (acetylacetonato)bis(5-isopropyl-3-methyl-2-phenylpyrazinato)iridium(III) (abbreviation: Ir(mppr-iPr)2(acac)), organometallic iridium complexes having a pyrazine skeleton such as these, tris(2-phenylpyridinato-N,C 2’ )iridium(III) (abbreviation: Ir(ppy)3), bis(2-phenylpyridinato-N,C 2’)Iridium(III) acetylacetonate (abbreviation: Ir(ppy)2(acac)), bis(benzo[h]quinolinato)iridium(III) acetylacetonate (abbreviation: Ir(bzq)2(acac)), tris(benzo[h]quinolinato)iridium(III) (abbreviation: Ir(bzq)3), tris(2-phenylquinolinato-N,C 2’ )iridium(III) (abbreviation: Ir(pq)3), bis(2-phenylquinolinato-N,C 2’ )Organometallic iridium complexes having a pyridine skeleton such as iridium(III) acetylacetonate (abbreviation: Ir(pq)2(acac)), bis(2,4-diphenyl-1,3-oxazolato-N,C 2’ )iridium(III) acetylacetonate (abbreviation: Ir(dpo)2(acac)), bis{2-[4’-(perfluorophenyl)phenyl]pyridinato-N,C 2’}iridium(III) acetylacetonate (abbreviation: Ir(p-PF-ph)2(acac)), bis(2-phenylbenzothiazolato-N,C 2’ )iridium(III) acetylacetonate (abbreviation: Ir(bt)2(acac)), etc. In addition to organometallic iridium complexes, rare earth metal complexes such as tris(acetylacetonato)(monophenanthroline)terbium(III) (abbreviation: Tb(acac)3(Phen)) are included. Among the above, organometallic iridium complexes having a pyrimidine skeleton are particularly preferred because of their outstanding reliability or luminescence efficiency.

[0143] In addition, examples of substances having an emission peak in the yellow or red wavelength region include organometallic iridium complexes having a pyrimidine skeleton such as (diisobutyrylmethanato)bis[4,6-bis(3-methylphenyl)pyrimidinato]iridium(III) (abbreviation: Ir(5mdppm)2(dibm)), bis[4,6-bis(3-methylphenyl)pyrimidinato](dipivaloylmethanato)iridium(III) (abbreviation: Ir(5mdppm)2(dpm)), bis[4,6-di(naphthalen-1-yl)pyrimidinato](dipivaloylmethanato)iridium(III) (abbreviation: Ir(d1npm)2(dpm)), organometallic iridium complexes having a pyrazine skeleton such as (acetylacetonato)bis(2,3,5-triphenylpyrazinato)iridium(III) (abbreviation: Ir(tppr)2(acac)), bis(2,3,5-triphenylpyrazinato)(dipivaloylmethanato)iridium(III) (abbreviation: Ir(tppr)2(dpm)), (acetylacetonato)bis[2,3-bis(4-fluorophenyl)quinoxalinato]iridium(III) (abbreviation: Ir(Fdpq)2(acac)), tris(1-phenylisoquinolinato-N,C 2’ )iridium(III) (abbreviation: Ir(piq)3), bis(1-phenylisoquinolinato-N,C 2’ )iridium(III) acetylacetonate (abbreviation: Ir(piq)2(acac)), and other organometallic iridium complexes having a pyridine skeleton, platinum complexes such as platinum(II) 2,3,7,8,12,13,17,18-octaethyl-21H,23H-porphyrin (abbreviation: PtOEP), rare earth metal complexes such as tris(1,3-diphenyl-1,3-propanedionato)(monophenanthroline)europium(III) (abbreviation: Eu(DBM)3(Phen)), tris[1-(2-thenoyl)-3,3,3-trifluoroacetonato](monophenanthroline)europium(III) (abbreviation: Eu(TTA)3(Phen)). Among those described above, organometallic iridium complexes having a pyrimidine skeleton are particularly preferred because of their outstanding reliability or luminescence efficiency. In addition, organometallic iridium complexes having a pyrazine skeleton can obtain red luminescence with good chromaticity.

[0144] As the light-emitting substance contained in the light-emitting layer 113, any material capable of converting triplet excitation energy into light emission may be used. Examples of materials capable of converting triplet excitation energy into light emission include, in addition to phosphorescent compounds, thermally activated delayed fluorescence (TADF) materials. Therefore, the part described as a phosphorescent compound may be read as a thermally activated delayed fluorescence material. Note that a thermally activated delayed fluorescence material is a material having a small energy difference between the triplet excitation energy level and the singlet excitation energy level and having a function of converting energy from the triplet excited state to the singlet excited state by reverse intersystem crossing. Therefore, upconversion (reverse intersystem crossing) from the triplet excited state to the singlet excited state is possible with a small amount of thermal energy, and efficient light emission (fluorescence) from the singlet excited state can be exhibited. Further, as conditions for efficiently obtaining thermally activated delayed fluorescence, the energy difference between the triplet excitation energy level and the singlet excitation energy level is preferably greater than 0 eV and 0.2 eV or less, more preferably greater than 0 eV and 0.1 eV or less.

[0145] When the thermally activated delayed fluorescence material is composed of one type of material, for example, the following materials can be used.

[0146] First, derivatives such as fullerenes, acridine derivatives such as proflavine, and eosin can be mentioned. Further, metal-containing porphyrins containing magnesium (Mg), zinc (Zn), cadmium (Cd), tin (Sn), platinum (Pt), indium (In), or palladium (Pd) etc. can be mentioned. Examples of the metal-containing porphyrin include protoporphyrin-tin fluoride complex (SnF2(Proto IX)), mesoporphyrin-tin fluoride complex (SnF2(Meso IX)), hematoporphyrin-tin fluoride complex (SnF2(Hemato IX)), coproporphyrin tetramethyl ester-tin fluoride complex (SnF2(Copro III-4Me)), octaethylporphyrin-tin fluoride complex (SnF2(OEP)), etioporphyrin-tin fluoride complex (SnF2(Etio I)), octaethylporphyrin-platinum chloride complex (PtCl2OEP), etc.

[0147] In addition, as a thermally activated delayed fluorescence material composed of a single type of material, a heterocyclic compound having a π-electron rich heterocyclic aromatic ring and a π-electron deficient heterocyclic aromatic ring can also be used. Specifically, 2-(biphenyl-4-yl)-4,6-bis(12-phenylindolo[2,3-a]carbazol-11-yl)-1,3,5-triazine (abbreviation: PIC-TRZ), 2-{4-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn), 2-[4-(10H-phenoxazine-10-yl)phenyl]-4,6-diphenyl-1,3,5-triazine (abbreviation: PXZ-TRZ), 3-[4-(5-phenyl-5,10-dihydrophenazin-10-yl)phenyl]-4,5-diphenyl-1,2,4-triazole (abbreviation: PPZ-3TPT), 3-(9,9-dimethyl-9H-acridin-10-yl)-9H-xanthen-9-one (abbreviation: ACRXTN), bis[4-(9,9-dimethyl-9,10-dihydroacridine)phenyl]sulfone (abbreviation: DMAC-DPS), 10-phenyl-10H,10’H-spiro[acridine-9,9’-anthracene]-10’-one (abbreviation: ACRSA), etc. can be mentioned. Since the heterocyclic compound has a π-electron rich heterocyclic aromatic ring and a π-electron deficient heterocyclic aromatic ring, it has high electron transportability and hole transportability, which is preferable. Among them, among the skeletons having a π-electron deficient heterocyclic aromatic ring, a diazine skeleton (pyrimidine skeleton, pyrazine skeleton, pyridazine skeleton), or a triazine skeleton is preferable because it is stable and has good reliability. Also, among the skeletons having a π-electron rich heterocyclic aromatic ring, an acridine skeleton, a phenoxazine skeleton, a thiophene skeleton, a furan skeleton, and a pyrrole skeleton are preferable because they are stable and have good reliability, and it is preferable to have any one or more selected from among these skeletons. Note that as the pyrrole skeleton, an indole skeleton, a carbazole skeleton, and a 3-(9-phenyl-9H-carbazol-3-yl)-9H-carbazole skeleton are particularly preferable.In addition, a substance in which a π-electron rich heteroaromatic ring and a π-electron deficient heteroaromatic ring are directly bonded is particularly preferable because both the donor property of the π-electron rich heteroaromatic ring and the acceptor property of the π-electron deficient heteroaromatic ring are strong, and the difference between the singlet excitation energy level and the triplet excitation energy level becomes small.

[0148] For example, as the light-emitting substance, an organic compound represented by the following structural formulas (500) to (511) can be used.

[0149]

Chemical formula

[0150] Note that the light-emitting layer 113 can also be composed of two or more layers. For example, when the first light-emitting layer and the second light-emitting layer are laminated in order from the hole transport layer side to form the light-emitting layer 113, a substance having hole transport properties is used as the host material of the first light-emitting layer, and a substance having electron transport properties is used as the host material of the second light-emitting layer. In addition, the light-emitting substances of the first light-emitting layer and the second light-emitting layer may be the same material or different materials, and may be materials having a function of emitting the same color light or materials having a function of emitting different emission colors. By using light-emitting substances having functions of emitting different emission colors in the two light-emitting layers, a plurality of emissions can be obtained simultaneously. In particular, it is preferable to select the light-emitting substances used in each light-emitting layer so that white light is obtained by the emissions presented by the two light-emitting layers.

[0151] Also, the light-emitting layer 113 may have a material other than the host material 118 and the guest material 119.

[0152] For example, a substance that exhibits fluorescence (fluorescent substance) can be further used in the light-emitting layer. In this case, light emission occurs when the excitation energy of the phosphorescent substance moves to the fluorescent substance in the light-emitting layer. Since the transition from the singlet excited state to the singlet ground state is allowed for the fluorescent substance, the excitation lifetime (luminescence lifetime) is shorter than that of the phosphorescent substance. Therefore, by further using a fluorescent substance in the light-emitting layer, a light-emitting device with stable and good reliability can be fabricated.

[0153] Examples of the fluorescent substance include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, naphthalene derivatives, and the like. A fluorescent substance whose singlet excitation energy level and triplet excitation energy level are lower than the triplet excitation energy level of the phosphorescent substance can be used.

[0154] Specific examples include 5,6-bis[4-(10-phenyl-9-anthryl)phenyl]-2,2'-bipyridine (abbreviation: PAP2BPy), 5,6-bis[4'-(10-phenyl-9-anthryl)biphenyl-4-yl]-2,2'-bipyridine (abbreviation: PAPP2BPy), N,N'-diphenyl-N,N'-bis[4-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene-1,6-diamine (abbreviation: 1,6FLPAPrn), N,N'-bis(3-methylphenyl)-N,N'-bis[3-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene-1,6-diamine (abbreviation: 1,6mMemFLPAPrn), N,N'-bis[4-(9H-carbazol-9-yl)phenyl]-N,N'-diphenylstilbene-4,4'-diamine (abbreviation: YGA2S), 4-(9H-carbazol-9-yl)-4'-(10-phenyl-9-anthryl)triphenylamine (abbreviation: YGAPA), 4-(9H-carbazol-9-yl)-4'-(9,10-diphenyl-2-anthryl)triphenylamine (abbreviation: 2YGAPPA), N,9-diphenyl-N-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole-3-amine (abbreviation: PCAPA), perylene, 2,5,8,11-tetra-tert-butylperylene (abbreviation: TBP), 4-(10-phenyl-9-anthryl)-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBAPA), N,N''-(2-tert-butylanthracene-9,10-diyl-di-4,1-phenylene)bis(N,N',N'-triphenyl-1,4-phenylenediamine) (abbreviation: DPABPA), N,N,N',N',N'',N'',N''',N''' -octaphenyldibenzo[g,p]chrysene-2,7,10,15-tetraamine (abbreviation: DBC1), coumarin 30, N,N'-diphenyl-N,N'-(1,6-pyrene-diyl)bis[(6-phenylbenzo[b]naphtho[1,2-d]furan)-8-amine] (abbreviation: 1,6BnfAPrn-03), N,N'-diphenyl-N,N'-bis(9-phenyl-9H-carbazol-2-yl)naphtho[2,3-b;6,7-b’]bisbenzofuran-3,10-diamine (abbreviation: 3,10PCA2Nbf(IV)-02), 3,10-bis[N-(dibenzofuran-3-yl)-N-phenylamino]naphtho[2,3-b;6,7-b’]bisbenzofuran (abbreviation: 3,10FrA2Nbf(IV)-02), etc. can be mentioned.;

[0155] In addition, 5,9-diphenyl-5,9-diaza-13b-boranaphtho[3,2,1-de]anthracene (abbreviation: DABNA1), 9-[(1,1’-diphenyl)-3-yl]-N,N,5,11-tetraphenyl-5,9-dihydro-5,9-diaza-13b-boranaphtho(3,2,1-de)anthracene-3-amine (abbreviation: DABNA2), 2,12-di(tert-butyl)-5,9-di(4-tert-butylphenyl)-N,N-diphenyl-5H,9H-[1,4]benzazaborino[2,3,4-kl]phenazaborine-7-amine (abbreviation: DPhA-tBu4DABNA), 2,12-di(tert-butyl)-N,N,5,9-tetra(4-tert-butylphenyl)-5H,9H-[1,4]benzazaborino[2,3,4-kl]phenazaborine-7-amine (abbreviation: tBuDPhA-tBu4DABNA), 2,12-di(tert-butyl)-5,9-di(4-tert-butylphenyl)-7-methyl-5H,9H-[1,4]benzazaborino[2,3,4-kl]phenazaborine (abbreviation: Me-tBu4DABNA), N7,N7,N13,N13,5,9,11,15-octaphenyl-5H,9H,11H,15H-[1,4]benzazaborino[2,3,4-kl][1,4]benzazaborino[4’,3’,2’:4,5][1,4]benzazaborino[3,2-b]phenazaborine-7,13-diamine (abbreviation: ν-DABNA), 2-(4-tert-butylphenyl)benzo[5,6]indolo[3,2,1-jk]benzo[b]carbazole (abbreviation: tBuPBibc) and other condensed heteroaromatic compounds containing nitrogen and boron, especially compounds having a diaza-boranaphtho-anthracene skeleton can be preferably used because they can obtain blue light emission with a narrow emission spectrum width and good color purity.

[0156] In addition to these, 9,10,11-tris[3,6-bis(1,1-dimethylethyl)-9H-carbazol-9-yl]-2,5,15,18-tetrakis(1,1-dimethylethyl)indolo[3,2,1-de]indolo[3’,2’,1’:8,1][1,4]benzazaborino[2,3,4-kl]phenazaborine (abbreviation: BBCz-G), 9,11-bis[3,6-bis(1,1-dimethylethyl)-9H-carbazol-9-yl]-2,5,15,18-tetrakis(1,1-dimethylethyl)indolo[3,2,1-de]indolo[3’,2’,1’:8,1][1,4]benzazaborino[2,3,4-kl]phenazaborine (abbreviation: BBCz-Y), etc. can be preferably used.

[0157] In addition, as the light-emitting material contained in the light-emitting layer, a thermally activated delayed fluorescence (TADF) material can be used. As the thermally activated delayed fluorescence material, a heterocyclic compound having a π-electron rich heteroaromatic ring and a π-electron deficient heteroaromatic ring can be used. Specific examples include 2-(biphenyl-4-yl)-4,6-bis(12-phenylindolo[2,3-a]carbazol-11-yl)-1,3,5-triazine (abbreviation: PIC-TRZ), 2-{4-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn), 2-[4-(10H-phenoxazin-10-yl)phenyl]-4,6-diphenyl-1,3,5-triazine (abbreviation: PXZ-TRZ), 3-[4-(5-phenyl-5,10-dihydrophenazin-10-yl)phenyl]-4,5-diphenyl-1,2,4-triazole (abbreviation: PPZ-3TPT), 3-(9,9-dimethyl-9H-acridin-10-yl)-9H-xanthen-9-one (abbreviation: ACRXTN), bis[4-(9,9-dimethyl-9,10-dihydroacridin)phenyl]sulfone (abbreviation: DMAC-DPS), 10-phenyl-10H,10’H-spiro[acridine-9,9’-anthracene]-10’-one (abbreviation: ACRSA), and the like. Since the heterocyclic compound has a π-electron rich heteroaromatic ring and a π-electron deficient heteroaromatic ring, it has high electron transportability and hole transportability, which is preferable. Among them, among the skeletons having a π-electron deficient heteroaromatic ring, a diazine skeleton (pyrimidine skeleton, pyrazine skeleton, pyridazine skeleton), or a triazine skeleton is preferable because it is stable and has good reliability. Also, among the skeletons having a π-electron rich heteroaromatic ring, an acridine skeleton, a phenoxazine skeleton, a thiophene skeleton, a furan skeleton, and a pyrrole skeleton are preferable because they are stable and have good reliability, and it is preferable to have any one or more selected from among these skeletons. Note that as the pyrrole skeleton, an indole skeleton, a carbazole skeleton, and a 3-(9-phenyl-9H-carbazol-3-yl)-9H-carbazole skeleton are particularly preferable.In addition, a substance in which a π-electron-rich heteroaromatic ring and a π-electron-deficient heteroaromatic ring are directly bonded is particularly preferable because both the donor property of the π-electron-rich heteroaromatic ring and the acceptor property of the π-electron-deficient heteroaromatic ring are strong, and the difference between the singlet excitation energy level and the triplet excitation energy level becomes small. Further, the compound having the above-described diaza-borananaphtho-anthracene skeleton also has a function as a thermally activated delayed fluorescence material and is suitable because blue light emission with good color purity can be obtained.

[0158] Alternatively, instead of the phosphorescent substance, a thermally activated delayed fluorescence material may be used. A thermally activated delayed fluorescence material is a material having a small difference between the triplet excitation energy level and the singlet excitation energy level and having a function of converting energy from the triplet excited state to the singlet excited state by reverse intersystem crossing. Therefore, up-conversion (reverse intersystem crossing) from the triplet excited state to the singlet excited state is possible with a small amount of thermal energy, and light emission (fluorescence) from the singlet excited state can be efficiently exhibited. Further, as conditions for efficiently obtaining thermally activated delayed fluorescence, the energy difference between the triplet excitation energy level and the singlet excitation energy level is preferably greater than 0 eV and 0.2 eV or less, more preferably greater than 0 eV and 0.1 eV or less.

[0159] Note that the light-emitting layer 113 can be formed by a method such as a vapor deposition method (including a vacuum vapor deposition method), an inkjet method, a coating method, or a gravure printing method. Further, in addition to the materials described above, it may have an inorganic compound such as a quantum dot or a polymer compound (oligomer, dendrimer, polymer, etc.).

[0160] ≪Hole injection layer≫ The hole injection layers (111, 111a, 111b) are layers that inject holes from the first electrode 101, which is an anode, and the charge generation layers (106, 106a, 106b) into the organic compound layers (103, 103a, 103b), and are layers containing an organic acceptor material and a material with high hole injection properties.

[0161] The positive hole injection layer (111, 111a, 111b) has a function of promoting hole injection by reducing the hole injection barrier from one of a pair of electrodes (the first electrode 101 or the second electrode 102), and is formed by, for example, transition metal oxides, phthalocyanine derivatives, or aromatic amines. Examples of the transition metal oxides include molybdenum oxides, vanadium oxides, ruthenium oxides, tungsten oxides, and manganese oxides. Examples of the phthalocyanine derivatives include phthalocyanine and metal phthalocyanines. Examples of the aromatic amines include benzidine derivatives and phenylenediamine derivatives. High molecular compounds such as polythiophene or polyaniline can also be used, and for example, poly(ethylenedioxythiophene) / polystyrene sulfonic acid, which is self-doped polythiophene, is a typical example thereof.

[0162] As the positive hole injection layer (111, 111a, 111b), a layer having a composite material of a hole transporting material and a material showing electron accepting properties with respect to the hole transporting material can also be used. Alternatively, a laminate of a layer containing a material showing electron accepting properties and a layer containing a hole transporting material may be used. Charge transfer is possible between these materials in a steady state or in the presence of an electric field. Examples of the material showing electron accepting properties include organic acceptors such as quinodimethane derivatives, chloranil derivatives, or hexaazatriphenylene derivatives. Specifically, compounds having an electron withdrawing group (halogen group or cyano group) such as 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviation: F4-TCNQ), chloranil, and 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (abbreviation: HAT-CN) can be mentioned. Further, transition metal oxides, for example, oxides of metals from Group 4 to Group 8 can be used. Specifically, vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, and rhenium oxide can be mentioned. Among them, molybdenum oxide is preferable because it is stable in the air, has low hygroscopicity, and is easy to handle.

[0163] As the hole transporting material, a material with higher hole transporting property than electrons can be used, and it is preferably a material having a hole mobility of 1 × 10 -6 cm 2 / Vs or more. Specifically, aromatic amines, carbazole derivatives, aromatic hydrocarbons, stilbene derivatives, etc., which were exemplified as hole transporting materials that can be used for the light emitting layer 113, can be used. Further, the hole transporting material may be a polymer compound.

[0164] ≪Hole Transporting Layer≫ The hole transporting layer (112, 112a, 112b) is a layer containing a hole transporting material, and the hole transporting materials exemplified as the materials for the hole injecting layer (111, 111a, 111b) can be used. Since the hole transporting layer (112, 112a, 112b) has a function of transporting the holes injected into the hole injecting layer (111, 111a, 111b) to the light emitting layer (113, 113a, 113b), it preferably has the same or a similar HOMO level as the HOMO level of the hole injecting layer (111, 111a, 111b).

[0165] Also, it is preferably a substance having a hole mobility of 1 × 10 -6 cm 2 / Vs or more. However, as long as it is a substance with higher hole transporting property than electrons, substances other than these may be used. Note that the layer containing a substance with high hole transporting property may be not only a single layer, but also two or more layers of the layers made of the above substances laminated.

[0166] ≪Electron Transporting Layer≫ The electron transporting layer (114, 114a, 114b) has a function of transporting the electrons injected from the other of the pair of electrodes (the first electrode 101 or the second electrode 102) through the electron injecting layer (115, 115a, 115b) to the light emitting layer 113. As the electron transporting material, a material with higher electron transporting property than holes can be used, and it is 1 × 10 -6 cm 2It is preferably a material having an electron mobility of / Vs or more. As a compound that easily accepts electrons (a material having electron transporting properties), a compound having a π-electron deficient heteroaromatic ring skeleton such as a nitrogen-containing heteroaromatic compound, or a metal complex can be used. Specifically, metal complexes having a quinoline ligand, a benzoquinoline ligand, an oxazole ligand, or a thiazole ligand, which can be used as an electron transporting material for the light emitting layer 113, can be mentioned. In addition, oxadiazole derivatives, triazole derivatives, benzimidazole derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, phenanthroline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, triazine derivatives, etc. can be mentioned. Also, a substance having an electron mobility of 1×10 -6 cm 2 / Vs or more is preferably used. As long as the substance has higher electron transporting properties than holes, substances other than those described above may be used as the electron transport layer. Also, the electron transport layer (114, 114a, 114b) may be not only a single layer, but also two or more layers of the above substances laminated.

[0167] Also, a layer for controlling the movement of electron carriers may be provided between the electron transport layer (114, 114a, 114b) and the light emitting layer (113, 113a, 113b). This is a layer in which a small amount of a substance having high electron trapping properties is added to a material having high electron transporting properties as described above, and by suppressing the movement of electron carriers, it becomes possible to adjust the carrier balance. Such a configuration has a great effect in suppressing problems (for example, a decrease in device lifetime) caused by electrons passing through the light emitting layer.

[0168] ≪Electron injection layer≫ The electron injection layers (115, 115a, 115b) have a function of promoting electron injection by reducing the electron injection barrier from the second electrode 102. For example, Group 1 metals, Group 2 metals, or their oxides, halides, carbonates, etc. can be used. Also, a composite material of the electron transporting material shown above and a material showing electron donating properties can be used. Examples of the material showing electron donating properties include Group 1 metals, Group 2 metals, or their oxides. Specifically, lithium fluoride (LiF), sodium fluoride (NaF), cesium fluoride (CsF), calcium fluoride (CaF2), lithium oxide (LiO x ) and other alkali metals, alkaline earth metals, or their compounds can be used. Also, rare earth metal compounds such as erbium fluoride (ErF3) can be used. Further, electrides may be used for the electron injection layer 115. Examples of the electride include substances obtained by adding electrons at a high concentration to a mixed oxide of calcium and aluminum. Also, substances that can be used in the electron transport layers (114, 114a, 114b) may be used for the electron injection layers (115, 115a, 115b).

[0169] Further, a composite material formed by mixing an organic compound and an electron donor may be used for the electron injection layers (115, 115a, 115b). Since electrons are generated in the organic compound by the electron donor, such a composite material is excellent in electron injection property and electron transport property. In this case, the organic compound is preferably a material excellent in transporting the generated electrons. Specifically, for example, the substances (such as metal complexes or heteroaromatic compounds) constituting the above-described electron transport layer 114 can be used. Any material that exhibits electron-donating properties with respect to the organic compound may be used as the electron donor. Specifically, an alkali metal, an alkaline earth metal, or a rare earth metal is preferable, and examples include lithium, sodium, cesium, magnesium, calcium, erbium, ytterbium, and the like. Also, an alkali metal oxide or an alkaline earth metal oxide is preferable, and examples include lithium oxide, calcium oxide, barium oxide, and the like. Further, a Lewis base such as magnesium oxide can also be used. Also, an organic compound such as tetrathiafulvalene (abbreviation: TTF) can also be used.

[0170] Note that the above-described light-emitting layer, hole injection layer, hole transport layer, electron transport layer, and electron injection layer can be formed by methods such as vapor deposition (including vacuum vapor deposition), inkjet method, coating method, gravure printing, and the like. In addition to the above-described materials, inorganic compounds such as quantum dots or polymer compounds (such as oligomers, dendrimers, polymers, etc.) may be used for the above-described light-emitting layer, hole injection layer, hole transport layer, electron transport layer, and electron injection layer.

[0171] Note that as the quantum dots, colloidal quantum dots, alloy-type quantum dots, core-shell type quantum dots, core-type quantum dots, etc. may be used. Also, quantum dots containing element groups of Group 2 and Group 16, Group 13 and Group 15, Group 13 and Group 17, Group 11 and Group 17, or Group 14 and Group 15 may be used. Alternatively, quantum dots having elements such as cadmium (Cd), selenium (Se), zinc (Zn), sulfur (S), phosphorus (P), indium (In), tellurium (Te), lead (Pb), gallium (Ga), arsenic (As), aluminum (Al), etc. may be used.

[0172] ≪Pair of Electrodes≫ The first electrode 101 and the second electrode 102 have the function as the anode or cathode of the light-emitting device. The first electrode 101 and the second electrode 102 can be formed using a metal, an alloy, a conductive compound, a mixture thereof, a laminate, or the like.

[0173] It is preferable that one of the first electrode 101 or the second electrode 102 is formed of a conductive material having a function of reflecting light. Examples of the conductive material include aluminum (Al) or an alloy containing Al. Examples of the alloy containing Al include an alloy containing Al and L (L represents one or more of titanium (Ti), neodymium (Nd), nickel (Ni), and lanthanum (La)), such as an alloy containing Al and Ti, or an alloy containing Al, Ni, and La. Aluminum has a low resistance value and a high light reflectance. In addition, since aluminum is abundant in the earth's crust and inexpensive, the manufacturing cost of the light-emitting device using aluminum can be reduced. Further, silver (Ag) or an alloy containing Ag and N (N represents one or more of yttrium (Y), Nd, magnesium (Mg), ytterbium (Yb), Al, Ti, gallium (Ga), zinc (Zn), indium (In), tungsten (W), manganese (Mn), tin (Sn), iron (Fe), Ni, copper (Cu), palladium (Pd), iridium (Ir), or gold (Au)) can also be used. Examples of the alloy containing silver include an alloy containing silver, palladium, and copper, an alloy containing silver and copper, an alloy containing silver and magnesium, an alloy containing silver and nickel, an alloy containing silver and gold, an alloy containing silver and ytterbium, and the like. In addition, transition metals such as tungsten, chromium (Cr), molybdenum (Mo), copper, and titanium can be used.

[0174] In addition, the light emitted from the light-emitting layer is extracted through one or both of the first electrode 101 and the second electrode 102. Therefore, at least one of the first electrode 101 and the second electrode 102 is preferably formed of a conductive material having a function of transmitting light. As the conductive material, the transmittance of visible light is 40% or more and 100% or less, preferably 60% or more and 100% or less, and its resistivity is 1×10 -2 Ω·cm or less.

[0175] In addition, the first electrode 101 and the second electrode 102 may be formed of a conductive material having a function of transmitting light and a function of reflecting light. As the conductive material, the reflectance of visible light is 20% or more and 80% or less, preferably 40% or more and 70% or less, and its resistivity is 1×10 -2 Ω·cm or less. For example, it can be formed by using one or more of a conductive metal, alloy, conductive compound, etc. Specifically, for example, indium tin oxide (Indium Tin Oxide, hereinafter ITO), indium tin oxide containing silicon or silicon oxide (abbreviation: ITSO), indium zinc oxide, indium tin oxide containing titanium, indium titanate, and metal oxides such as indium oxide containing tungsten oxide and zinc oxide can be used. In addition, a metal thin film having a light-transmitting degree (preferably a thickness of 1 nm or more and 30 nm or less) can be used. As the metal, for example, Ag can be used. As the alloy, alloys such as Ag and Al, Ag and Mg, Ag and Au, Ag and Yb can be used.

[0176] In addition, in this specification and the like, the material having the function of transmitting light may be any material having the function of transmitting visible light and having conductivity. For example, in addition to the oxide conductor typified by ITO as described above, it includes an oxide semiconductor or an organic conductor containing an organic substance. Examples of the organic conductor containing an organic substance include a composite material formed by mixing an organic compound and an electron donor, a composite material formed by mixing an organic compound and an electron acceptor, and the like. Further, an inorganic carbon-based material such as graphene may be used. The resistivity of the material is preferably 1×10 5 Ω·cm or less, more preferably 1×10 4 Ω·cm or less.

[0177] Further, one or both of the first electrode 101 and the second electrode 102 may be formed by laminating a plurality of the above materials.

[0178] In addition, in order to improve the light extraction efficiency, a material having a higher refractive index than the electrode may be formed in contact with the electrode having the function of transmitting light. Such a material may be any material having the function of transmitting visible light, and may or may not have conductivity. For example, in addition to the oxide conductor as described above, an oxide semiconductor and an organic substance are included. Examples of the organic substance include the materials exemplified for the light-emitting layer, the hole injection layer, the hole transport layer, the electron transport layer, or the electron injection layer. Further, an inorganic carbon-based material or a metal thin film through which light can pass may be used, and a plurality of layers of several nm to several tens of nm may be laminated.

[0179] When the first electrode 101 or the second electrode 102 has the function of a cathode, it preferably has a material with a small work function (3.8 eV or less). For example, elements belonging to Group 1 or Group 2 of the periodic table (alkali metals such as lithium, sodium, cesium, alkaline earth metals such as calcium, strontium, magnesium, etc.), alloys containing these elements (for example, Ag and Mg, Al and Li), rare earth metals such as europium (Eu), Yb, alloys containing these rare earth metals, aluminum, alloys containing silver, etc. can be used.

[0180] Also, when using the first electrode 101 or the second electrode 102 as the anode, it is preferable to use a material with a large work function (4.0 eV or more).

[0181] Also, the first electrode 101 and the second electrode 102 may be a laminate of a conductive material having a function of reflecting light and a conductive material having a function of transmitting light. In that case, the first electrode 101 and the second electrode 102 are preferable because they can have a function of adjusting the optical distance so as to resonate the desired light from each light-emitting layer and enhance the light of that wavelength.

[0182] As the film formation method of the first electrode 101 and the second electrode 102, a sputtering method, an evaporation method, a printing method, a coating method, an MBE (Molecular Beam Epitaxy) method, a CVD method, a pulsed laser deposition method, an ALD (Atomic Layer Deposition) method, etc. can be appropriately used.

[0183] ≪Charge Generation Layer≫ The charge generation layer 106 has a function of injecting electrons into the organic compound layer 103a and injecting holes into the organic compound layer 103b when a voltage is applied between the first electrode (anode) 101 and the second electrode (cathode) 102. Note that the charge generation layer 106 may be a configuration in which an electron acceptor is added to a hole-transporting material (also referred to as a P-type layer), or a configuration in which an electron donor is added to an electron-transporting material (also referred to as an electron injection buffer layer). Also, both of these configurations may be laminated. Furthermore, an electron relay layer may be provided between the P-type layer and the electron injection buffer layer. By forming the charge generation layer 106 using the materials described above, it is possible to suppress an increase in the driving voltage when an organic compound layer including a light-emitting layer is laminated.

[0184] In the charge generation layer 106, when a configuration (P-type layer) is adopted in which an electron acceptor is added to a hole transporting material that is an organic compound, as the hole transporting material, the materials shown in this embodiment can be used. As the electron acceptor, 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviation: F4-TCNQ), chloranil, etc. can be mentioned. Further, metal oxides belonging to Groups 4 to 8 in the periodic table of elements can be mentioned. Specifically, vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, rhenium oxide, etc. can be mentioned. In addition, the acceptor materials described above may be used. Further, it may be used as a mixed film formed by mixing the materials constituting the P-type layer, or single films containing the respective materials may be laminated.

[0185] Also, in the charge generation layer 106, when a configuration (electron injection buffer layer) is adopted in which an electron donor is added to an electron transporting material, as the electron transporting material, the materials shown in this embodiment can be used. As the electron donor, an alkali metal, an alkaline earth metal, a rare earth metal, a metal belonging to Group 2 or Group 13 in the periodic table of elements, and their oxides and carbonates can be used. Specifically, it is preferable to use lithium (Li), cesium (Cs), magnesium (Mg), calcium (Ca), ytterbium (Yb), indium (In), lithium oxide (Li2O), cesium carbonate, etc. Further, an organic compound such as tetrathianaphthacene may be used as the electron donor.

[0186] When an electron relay layer is provided between the P-type layer and the electron injection buffer layer in the charge generation layer 106, the electron relay layer contains at least a substance having electron transporting properties and has a function of preventing the interaction between the electron injection buffer layer and the P-type layer and smoothly transferring electrons. The LUMO level of the substance having electron transporting properties contained in the electron relay layer is preferably between the LUMO level of the acceptor substance in the P-type layer and the LUMO level of the substance having electron transporting properties contained in the electron transport layer in contact with the charge generation layer 106. The specific energy level of the LUMO level in the substance having electron transporting properties used for the electron relay layer is preferably -5.0 eV or more, more preferably -5.0 eV or more and -3.0 eV or less. In addition, as the substance having electron transporting properties used for the electron relay layer, it is preferable to use a phthalocyanine-based material or a metal complex having a metal-oxygen bond and an aromatic ligand.

[0187] In addition, in FIG. 2(D), a configuration in which two organic compound layers 103 are laminated is shown, but a laminated structure of an organic compound layer including three or more light-emitting layers may be adopted by providing a charge generation layer between different light-emitting layers.

[0188] <<Cap Layer>> Although not shown in FIGS. 2(A) to 2(E), a cap layer may be provided on the second electrode 102 of the light-emitting device. For example, a material having a high refractive index can be used for the cap layer. By providing the cap layer on the second electrode 102, the light extraction efficiency of the light emitted from the second electrode 102 can be improved.

[0189] Specific examples of materials that can be used for the cap layer include 5,5'-diphenyl-2,2'-di-5H-[1]benzothieno[3,2-c]carbazole (abbreviation: BisBTc), 4,4',4''-(benzene-1,3,5-triyl)tri(dibenzothiophene) (abbreviation: DBT3P-II), etc. In addition, the organic compounds described in Embodiment 1 can be used.

[0190] <<Substrate>> Moreover, the light-emitting device according to one aspect of the present invention may be fabricated on a substrate made of glass, plastic, or the like. As for the order of fabrication on the substrate, it may be laminated in order from the first electrode 101 side or from the second electrode 102 side.

[0191] In addition, as the substrate on which the light-emitting device according to one aspect of the present invention can be formed, for example, glass, quartz, plastic, or the like can be used. A flexible substrate may also be used. A flexible substrate is a substrate that can be bent (flexible), and examples thereof include plastic substrates made of polycarbonate or polyarylate. Further, a film, an inorganic vapor deposition film, or the like can also be used. As long as it functions as a support in the manufacturing process of the light-emitting device and the optical element, other materials may be used. Alternatively, it may have a function of protecting the light-emitting device and the optical element.

[0192] For example, in this specification and the like, a light-emitting device can be formed using various substrates. The type of the substrate is not particularly limited. As an example of the substrate, there are a semiconductor substrate (e.g., a single-crystalline substrate such as a silicon substrate), an SOI substrate, a glass substrate, a quartz substrate, a plastic substrate, a metal substrate, a stainless-steel substrate, a substrate having a stainless-steel foil, a tungsten substrate, a substrate having a tungsten foil, a flexible substrate, a laminated film, a cellulose nanofiber (CNF) containing a fibrous material, paper, or a base film. As an example of the glass substrate, there are barium borosilicate glass, aluminoborosilicate glass, or soda-lime glass. Examples of the flexible substrate, the laminated film, the base film, etc. include the following. For example, there are plastics typified by polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyethersulfone (PES), and polytetrafluoroethylene (PTFE). Or, as an example, there is an acrylic resin. Or, as an example, there are polypropylene, polyester, polyvinyl fluoride, or polyvinyl chloride. Or, as an example, there are resins such as polyamide, polyimide, aramid, or epoxy, an inorganic vapor deposition film, or papers.

[0193] Further, as the substrate, a flexible substrate may be used, and a light-emitting device may be directly formed on the flexible substrate. Or, a release layer may be provided between the substrate and the light-emitting device. The release layer can be used to separate from the substrate after partially or completely completing the light-emitting device thereon and transfer it to another substrate. At that time, the light-emitting device can also be transferred to a substrate with poor heat resistance or a flexible substrate. Note that, for the above-mentioned release layer, for example, a configuration of a laminated structure of an inorganic film of a tungsten film and a silicon oxide film, and a configuration in which a resin film such as polyimide is formed on the substrate can be used.

[0194] That is, a light-emitting device may be formed using a certain substrate, and then the light-emitting device may be transferred to another substrate and disposed on the other substrate. As an example of the substrate to which the light-emitting device is transferred, in addition to the substrates described above, there are cellophane substrates, stone substrates, wood substrates, cloth substrates (including natural fibers (silk, cotton, linen), synthetic fibers (nylon, polyurethane, polyester), or recycled fibers (acetate, cupra, rayon, recycled polyester), etc.), leather substrates, or rubber substrates. By using these substrates, a light-emitting device that is difficult to break, a light-emitting device with high heat resistance, a light-emitting device with reduced weight, or a light-emitting device with reduced thickness can be obtained.

[0195] Further, for example, a field effect transistor (FET) may be formed on the substrate described above, and a light-emitting device may be fabricated on an electrode electrically connected to the FET. Thereby, an active matrix type display device that controls the driving of the light-emitting device by the FET can be fabricated.

[0196] In addition, in this embodiment, one aspect of the present invention has been described. Or, in other embodiments, one aspect of the present invention is described. However, one aspect of the present invention is not limited to these. That is, in this embodiment and other embodiments, since various aspects of the invention are described, one aspect of the present invention is not limited to a specific aspect. For example, as one aspect of the present invention, an example when applied to a light-emitting device has been shown, but one aspect of the present invention is not limited to this. For example, in some cases or depending on the situation, one aspect of the present invention may not be applied to a light-emitting device. Or, for example, in one aspect of the present invention, it has a first organic compound, a second organic compound, and a guest material having a function capable of converting triplet excitation energy into light emission, and the LUMO level of the first organic compound is lower than the LUMO level of the second organic compound, and the HOMO level of the first organic compound is lower than the HOMO level of the second organic compound. An example of this case has been shown, but one aspect of the present invention is not limited to this. In some cases or depending on the situation, in one aspect of the present invention, for example, the LUMO level of the first organic compound may not be lower than the LUMO level of the second organic compound. Or, the HOMO level of the first organic compound may not be lower than the HOMO level of the second organic compound. Or, for example, in one aspect of the present invention, an example in which the first organic compound and the second organic compound form an exciplex has been shown, but one aspect of the present invention is not limited to this. In some cases or depending on the situation, in one aspect of the present invention, for example, the first organic compound and the second organic compound may not form an exciplex. Or, for example, in one aspect of the present invention, an example in which the LUMO level of the guest material is higher than the LUMO level of the first organic compound and the HOMO level of the guest material is lower than the HOMO level of the second organic compound has been shown, but one aspect of the present invention is not limited to this. In some cases or depending on the situation, in one aspect of the present invention, for example, the LUMO level of the guest material may not be higher than the LUMO level of the first organic compound. Or, the HOMO level of the guest material may not be lower than the HOMO level of the second organic compound.

[0197] As described above, the configuration shown in the present embodiment can be used in appropriate combination with the configuration shown in other embodiments.

[0198] (Embodiment 3) As illustrated in FIGS. 3(A) and 3(B), a plurality of light-emitting devices 130 are formed on the insulating layer 175 to constitute a display device. In the present embodiment, a display device according to an aspect of the present invention will be described in detail.

[0199] The display device 100 has a pixel portion 177 in which a plurality of pixels 178 are arranged in a matrix. The pixel 178 has a sub-pixel 110R, a sub-pixel 110G, and a sub-pixel 110B.

[0200] In this specification and the like, for example, when describing matters common to the sub-pixel 110R, the sub-pixel 110G, and the sub-pixel 110B, they may be described by referring to them as the sub-pixel 110. For other components distinguished by alphabets, when describing matters common to them, symbols omitting the alphabets may be used for the description.

[0201] The sub-pixel 110R exhibits red light, the sub-pixel 110G exhibits green light, and the sub-pixel 110B exhibits blue light. Thereby, an image can be displayed on the pixel portion 177. In the present embodiment, three-color sub-pixels of red (R), green (G), and blue (B) are described as an example, but other combinations of sub-pixels of different colors may also be used. Also, the number of sub-pixels is not limited to three, and may be four or more. Examples of four sub-pixels include four-color sub-pixels of R, G, B, and white (W), four-color sub-pixels of R, G, B, and Y, and four sub-pixels of R, G, B, and infrared light (IR).

[0202] In this specification and the like, the row direction may be referred to as the X direction, and the column direction may be referred to as the Y direction. The X direction and the Y direction intersect, for example, perpendicularly.

[0203] In FIG. 3(A), an example is shown in which sub-pixels of different colors are arranged side by side in the X direction, and sub-pixels of the same color are arranged side by side in the Y direction. Note that sub-pixels of different colors may be arranged side by side in the Y direction, and sub-pixels of the same color may be arranged side by side in the X direction.

[0204] Outside the pixel portion 177, a connection portion 140 may be provided, and a region 141 may be provided. The region 141 is provided between the pixel portion 177 and the connection portion 140. An organic compound layer 103 is provided in the region 141. Also, a conductive layer 151C is provided in the connection portion 140.

[0205] In FIG. 3(A), an example is shown in which the region 141 and the connection portion 140 are located on the right side of the pixel portion 177, but the positions of the region 141 and the connection portion 140 are not particularly limited. Also, the region 141 and the connection portion 140 may be singular or plural.

[0206] FIG. 3(B) is an example of a cross-sectional view between the dashed-dotted line A1 - A2 in FIG. 3(A). As shown in FIG. 3(A), the display device 100 includes an insulating layer 171, a conductive layer 172 on the insulating layer 171, an insulating layer 173 on the insulating layer 171 and on the conductive layer 172, an insulating layer 174 on the insulating layer 173, and an insulating layer 175 on the insulating layer 174. The insulating layer 171 is provided on a substrate (not shown). Openings reaching the conductive layer 172 are provided in the insulating layer 175, the insulating layer 174, and the insulating layer 173, and plugs 176 are provided so as to fill the openings.

[0207] In the pixel portion 177, a light-emitting device 130 is provided on the insulating layer 175 and the plug 176. Also, a protective layer 131 is provided so as to cover the light-emitting device 130. The substrate 120 is bonded by a resin layer 122 on the protective layer 131. Also, it is preferable that an inorganic insulating layer 125 and an insulating layer 127 on the inorganic insulating layer 125 are provided between adjacent light-emitting devices 130.

[0208] In FIG. 3(B), a plurality of cross-sections of the inorganic insulating layer 125 and the insulating layer 127 are shown. However, when the display device 100 is viewed from above, it is preferable that the inorganic insulating layer 125 and the insulating layer 127 are each connected into one. That is, the insulating layer 127 is preferably an insulating layer having an opening on the first electrode.

[0209] In FIG. 3(B), light-emitting devices 130R, 130G, and 130B are shown as the light-emitting device 130. The light-emitting devices 130R, 130G, and 130B are assumed to exhibit mutually different emission colors. For example, the light-emitting device 130R can emit red light, the light-emitting device 130G can emit green light, and the light-emitting device 130B can emit blue light. Also, the light-emitting device 130R, the light-emitting device 130G, or the light-emitting device 130B may emit other visible light or infrared light.

[0210] The display device according to one aspect of the present invention can be a top emission type that emits light in a direction opposite to the substrate on which, for example, the light-emitting device is formed. Note that the display device according to one aspect of the present invention may be a bottom emission type.

[0211] Examples of the light-emitting substance included in the light-emitting device 130 include organic compounds or organometallic complexes such as substances that emit fluorescence (fluorescent materials), substances that emit phosphorescence (phosphorescent materials), and substances that exhibit thermally activated delayed fluorescence (thermally activated delayed fluorescence (TADF) materials). Inorganic compounds such as quantum dots may also be used.

[0212] The light-emitting device 130R has a configuration as shown in Embodiment 1. It has a first electrode (pixel electrode) composed of a conductive layer 151R and a conductive layer 152R, an organic compound layer 103R on the first electrode, a common layer 104 on the organic compound layer 103R, and a second electrode (common electrode) 102 on the common layer. Note that the common layer 104 may or may not be provided, but it is preferable to provide it because it can reduce damage to the organic compound layer 103R during processing. When the common layer 104 is provided, the common layer 104 is preferably an electron injection layer. Also, when the common layer 104 is provided, the laminated structure of the organic compound layer 103R and the common layer 104 corresponds to the organic compound layer 103 in Embodiment 2.

[0213] The light-emitting device 130G has a configuration as shown in Embodiment 1. It has a first electrode (pixel electrode) composed of a conductive layer 151G and a conductive layer 152G, an organic compound layer 103G on the first electrode, a common layer 104 on the organic compound layer 103G, and a second electrode (common electrode) 102 on the common layer. Note that the common layer 104 may or may not be provided, but it is preferable to provide it because it can reduce damage to the organic compound layer 103G during processing. When the common layer 104 is provided, the common layer 104 is preferably an electron injection layer. Also, when the common layer 104 is provided, the laminated structure of the organic compound layer 103G and the common layer 104 corresponds to the organic compound layer 103 in Embodiment 2.

[0214] The light-emitting device 130B has the configuration as shown in Embodiment 1. It has a first electrode (pixel electrode) composed of a conductive layer 151B and a conductive layer 152B, an organic compound layer 103B on the first electrode, a common layer 104 on the organic compound layer 103B, and a second electrode (common electrode) 102 on the common layer. Note that the common layer 104 may or may not be provided, but it is preferable to provide it because it can reduce damage to the organic compound layer 103B during processing. When the common layer 104 is provided, the common layer 104 is preferably an electron injection layer. Also, when the common layer 104 is provided, the laminated structure of the organic compound layer 103B and the common layer 104 corresponds to the organic compound layer 103 in Embodiment 2.

[0215] Of the pixel electrode and the common electrode included in the light-emitting device, one functions as an anode and the other functions as a cathode. Hereinafter, unless otherwise specified, it will be described assuming that the pixel electrode functions as an anode and the common electrode functions as a cathode.

[0216] The organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B are independent in island shapes for each sub-pixel or for each emission color. By providing the organic compound layer 103 in an island shape for each light-emitting device 130, the leakage current between adjacent light-emitting devices 130 can be suppressed even in a high-definition display device. Thereby, crosstalk can be prevented, and a display device with extremely high contrast can be realized. In particular, a display device with high current efficiency at low luminance can be realized.

[0217] The island-shaped organic compound layer 103 is formed by forming an EL film and processing the EL film using a lithography method.

[0218] In addition, in the display device according to one aspect of the present invention, it is preferable that the first electrode (pixel electrode) of the light-emitting device has a stacked structure. For example, in the example shown in FIG. 3(B), the first electrode of the light-emitting device 130 has a stacked structure of a conductive layer 151 and a conductive layer 152. For example, when the display device 100 is a top emission type and the pixel electrode of the light-emitting device 130 functions as an anode, the conductive layer 151 is preferably a layer having a high reflectance for visible light, and the conductive layer 152 is preferably a layer having, for example, visible light transmissivity and a large work function. When the display device 100 is a top emission type, the higher the reflectance of the pixel electrode for visible light, the higher the extraction efficiency of the light emitted from the organic compound layer 103 can be. Further, when the pixel electrode functions as an anode, the larger the work function of the pixel electrode, the easier the injection of holes into the organic compound layer 103 becomes. From the above, by forming the pixel electrode of the light-emitting device 130 into a stacked structure of a conductive layer 151 having a high reflectance for visible light and a conductive layer 152 having a large work function, the light-emitting device 130 can be made into a light-emitting device having high light extraction efficiency and low driving voltage.

[0219] When the conductive layer 151 is a layer having a high reflectance for visible light, the reflectance of the conductive layer 151 for visible light is preferably, for example, 40% or more and 100% or less, or 70% or more and 100% or less. Further, when the conductive layer 152 is an electrode having visible light transmissivity, the transmittance for visible light is preferably, for example, 40% or more.

[0220] Here, when the pixel electrode has a stacked structure composed of a plurality of layers, for example, the pixel electrode may be deteriorated due to a reaction between the plurality of layers. For example, when the film formed after the formation of the pixel electrode is removed by a wet etching method, galvanic corrosion may occur due to the chemical solution coming into contact with the pixel electrode.

[0221] Therefore, in the display device 100 of the present embodiment, an insulating layer 156 is formed on the side surfaces of the conductive layer 151 and the conductive layer 152. Thereby, even when removing the film formed after forming the pixel electrode having, for example, the conductive layer 151 and the conductive layer 152 by the wet etching method, it is possible to suppress the chemical solution from contacting the conductive layer 151. Therefore, for example, the occurrence of galvanic corrosion on the pixel electrode can be suppressed. Thus, since the display device 100 can be manufactured by a method with a high yield, it can be made into a low-cost display device. In addition, since it is possible to suppress the occurrence of defects in the display device 100, the display device 100 can be made into a highly reliable display device.

[0222] As the conductive layer 151, for example, a metal material can be used. Specifically, for example, metals such as aluminum (Al), titanium (Ti), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), gallium (Ga), zinc (Zn), indium (In), tin (Sn), molybdenum (Mo), tantalum (Ta), tungsten (W), palladium (Pd), gold (Au), platinum (Pt), silver (Ag), yttrium (Y), neodymium (Nd), etc., and alloys containing these appropriately combined can also be used.

[0223] As the conductive layer 152, an oxide having any one or more selected from indium, tin, zinc, gallium, titanium, aluminum, and silicon can be used. For example, indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide containing gallium, titanium oxide, indium zinc oxide containing gallium, indium zinc oxide containing aluminum, indium tin oxide containing silicon, and indium zinc oxide containing silicon, etc., any one or more of the conductive oxides containing them are preferably used. In particular, indium tin oxide containing silicon has a large work function, for example, the work function is 4.0 eV or more, so it can be suitably used as the conductive layer 152.

[0224] The conductive layer 151 may have a laminated structure of a plurality of layers having different materials, and the conductive layer 152 may also have a laminated structure of a plurality of layers having different materials. In this case, the conductive layer 151 may have a layer using a material that can be used for the conductive layer 152 such as a conductive oxide, and the conductive layer 152 may also have a layer using a material that can be used for the conductive layer 151 such as a metal material. For example, when the conductive layer 151 has a laminated structure of two or more layers, the layer in contact with the conductive layer 152 can be a layer using a material that can be used for the conductive layer 152.

[0225] Note that the end portion of the insulating layer 156 may have a tapered shape. Specifically, by having the end portion of the insulating layer 156 have a tapered shape with a taper angle of less than 90°, the covering property of the structure provided along the side surface of the insulating layer 156 can be enhanced.

[0226] FIG. 4(A) shows a diagram in the case where the conductive layer 151 has a laminated structure of a plurality of layers containing different materials. As shown in FIG. 4(A), the conductive layer 151 has a configuration including a conductive layer 151a, a conductive layer 151b on the conductive layer 151a, and a conductive layer 151c on the conductive layer 151b. That is, the conductive layer 151 shown in FIG. 4(A) has a three-layer laminated structure. Thus, when the conductive layer 151 has a laminated structure of a plurality of layers, the reflectance of at least one of the layers constituting the conductive layer 151 with respect to visible light may be made higher than the reflectance of the conductive layer 152 with respect to visible light.

[0227] In the example shown in FIG. 4(A), the conductive layer 151b is configured to be sandwiched between the conductive layer 151a and the conductive layer 151c. It is preferable to use a material that is less likely to deteriorate than the conductive layer 151b for the conductive layer 151a and the conductive layer 151c. For example, for the conductive layer 151a, a material that is less likely to cause migration due to contact with the insulating layer 175 than the conductive layer 151b can be used. Also, for the conductive layer 151c, a material that is less likely to oxidize than the conductive layer 151b and has a lower electrical resistivity of the oxide than the oxide of the material used for the conductive layer 151b can be used.

[0228] As described above, by configuring the conductive layer 151b to be sandwiched between the conductive layer 151a and the conductive layer 151c, the range of material selection for the conductive layer 151b can be widened. As a result, for example, the conductive layer 151b can be made into a layer having a higher reflectance for visible light than at least one of the conductive layer 151a and the conductive layer 151c. For example, aluminum can be used as the conductive layer 151b. Note that an alloy containing aluminum may be used for the conductive layer 151b. Further, as the conductive layer 151a, titanium, which has a lower reflectance for visible light compared to aluminum but is less likely to cause migration than aluminum even when in contact with the insulating layer 175, can be used. Furthermore, as the conductive layer 151c, titanium, which has a lower reflectance for visible light compared to aluminum but is less likely to be oxidized than aluminum and has an electrical resistivity of the oxide lower than that of aluminum oxide, can be used.

[0229] Also, silver or an alloy containing silver may be used as the conductive layer 151c. Silver has the property of having a higher reflectance for visible light than titanium. Furthermore, silver has the property of being less likely to be oxidized than aluminum and the electrical resistivity of silver oxide is lower than that of aluminum oxide. As described above, when silver or an alloy containing silver is used as the conductive layer 151c, the reflectance of the conductive layer 151 for visible light can be suitably increased while suppressing an increase in the electrical resistance of the pixel electrode due to oxidation of the conductive layer 151b. Here, as the alloy containing silver, for example, an alloy of silver, palladium, and copper (also denoted as Ag-Pd-Cu, APC) can be applied. Note that when silver or an alloy containing silver is used as the conductive layer 151c and aluminum is used as the conductive layer 151b, the reflectance of the conductive layer 151c for visible light can be made higher than the reflectance of the conductive layer 151b for visible light. Here, silver or an alloy containing silver may be used as the conductive layer 151b. Also, silver or an alloy containing silver may be used as the conductive layer 151a.

[0230] On the one hand, the film using titanium is superior in processability by etching to the film using silver. Therefore, by using titanium as the conductive layer 151c, the conductive layer 151c can be easily formed. Note that the film using aluminum is also superior in processability by etching to the film using silver.

[0231] As described above, by forming the conductive layer 151 into a laminated structure of a plurality of layers, the characteristics of the display device can be improved. For example, the display device 100 can be made into a display device with high light extraction efficiency and high reliability.

[0232] Here, when a microcavity structure is applied to the light-emitting device 130, if silver, which is a material with a high reflectance for visible light, or an alloy containing silver is used as the conductive layer 151c, the light extraction efficiency of the display device 100 can be suitably increased.

[0233] As described above, the side surface of the conductive layer 151 preferably has a tapered shape. Specifically, the side surface of the conductive layer 151 preferably has a tapered shape with a taper angle of less than 90°. For example, in the conductive layer 151 having the configuration shown in FIG. 4(A), at least one side surface of the conductive layer 151a, the conductive layer 151b, and the conductive layer 151c preferably has a tapered shape.

[0234] The conductive layer 151 shown in FIG. 4(A) can be formed using a lithography method. Specifically, first, a conductive film to be the conductive layer 151a, a conductive film to be the conductive layer 151b, and a conductive film to be the conductive layer 151c are formed in sequence. Next, a resist mask is formed on the conductive film to be the conductive layer 151c. Then, the conductive film in the region not overlapping with the resist mask is removed using, for example, an etching method. Here, by processing the conductive film under conditions where the resist mask is likely to recede (shrink) as compared with the case where the conductive layer 151 is formed so that the side surface does not have a tapered shape, that is, the side surface is perpendicular, the side surface of the conductive layer 151 can be made into a tapered shape.

[0235] Here, when the conductive film is processed under conditions where the resist mask is likely to recede (shrink), the conductive film may be more likely to be processed in the horizontal direction. That is, the etch anisotropy may be higher than when forming the conductive layer 151 so that the side surface is vertical.

[0236] Also, when the conductive layer 151 has a laminated structure of a plurality of layers made of different materials, the ease of horizontal processing may be different between the plurality of layers. For example, the ease of horizontal processing may be different between the conductive layer 151a, the conductive layer 151b, and the conductive layer 151c.

[0237] In this case, as shown in FIG. 4(A) after processing the conductive film, the side surface of the conductive layer 151b may be located inside the side surfaces of the conductive layer 151a and the conductive layer 151c, forming a protruding portion. As a result, the covering property of the conductive layer 152 with respect to the conductive layer 151 may decrease, and there may be a risk of step discontinuity in the conductive layer 152.

[0238] Therefore, it is preferable to provide the insulating layer 156 as shown in FIG. 4(A). FIG. 4(A) shows an example in which the insulating layer 156 is provided on the conductive layer 151a so as to have a region overlapping the side surface of the conductive layer 151b. Thereby, the occurrence of step discontinuity or thinning of the conductive layer 152 due to the protruding portion can be suppressed, and connection failure or an increase in driving voltage can be suppressed.

[0239] In FIG. 4(A), a structure in which the side surface of the conductive layer 151b is entirely covered by the insulating layer 156 is illustrated, but a part of the side surface of the conductive layer 151b may not be covered by the insulating layer 156. Similarly, in the pixel electrode having the configuration shown hereinafter, a part of the side surface of the conductive layer 151b may not be covered by the insulating layer 156.

[0240] When the conductive layer 151 has the configuration shown in FIG. 4(A), the conductive layer 152 is provided to cover the conductive layer 151a, the conductive layer 151b, the conductive layer 151c, and the insulating layer 156 and to be electrically connected to the conductive layer 151a, the conductive layer 151b, and the conductive layer 151c. Thereby, even when, for example, a film formed after the formation of the conductive layer 152 is removed by a wet etching method, it is possible to prevent the chemical solution from coming into contact with any of the conductive layer 151a, the conductive layer 151b, and the conductive layer 151c. Therefore, the occurrence of corrosion can be suppressed in any of the conductive layer 151a, the conductive layer 151b, and the conductive layer 151c. Therefore, the display device 100 can be manufactured by a method with a high yield. In addition, the occurrence of defects is suppressed, and the display device 100 can be a highly reliable display device.

[0241] Here, as shown in FIG. 4(A), the insulating layer 156 preferably has a curved surface. Thereby, for example, the occurrence of steps in the conductive layer 152 covering the insulating layer 156 can be suppressed as compared with the case where the side surface of the insulating layer 156 is perpendicular (parallel to the Z direction). Further, even when the insulating layer 156 has a tapered shape on the side surface, specifically, a tapered shape with a taper angle of less than 90°, the occurrence of steps in the conductive layer 152 covering the insulating layer 156 can be suppressed as compared with the case where the side surface of the insulating layer 156 is perpendicular. From the above, the display device 100 can be manufactured by a method with a high yield. In addition, the occurrence of defects is suppressed, and the display device 100 can be a highly reliable display device.

[0242] Note that in FIG. 4(A), a configuration is shown in which the side surface of the conductive layer 151b is located inside the side surfaces of the conductive layer 151a and the conductive layer 151c, but one aspect of the present invention is not limited to this. For example, the side surface of the conductive layer 151b may be located outside the side surface of the conductive layer 151a. Also, the side surface of the conductive layer 151b may be located outside the side surface of the conductive layer 151c.

[0243] Figures 4(B) to 4(D) show other configurations of the first electrode 101. Figure 4(B) shows a configuration in which, in the first electrode 101 of Figure 4(A), the insulating layer 156 covers not only the side surface of the conductive layer 151b but also the side surfaces of the conductive layer 151a, the conductive layer 151b, and the conductive layer 151c.

[0244] Figure 4(C) shows a configuration in which the insulating layer 156 is not provided in the first electrode 101 of Figure 4(A).

[0245] Figure 4(D) shows a configuration in which, in the first electrode 101 of Figure 4(A), the conductive layer 151 does not have a stacked structure and the conductive layer 152 has a stacked structure.

[0246] The conductive layer 152a is a layer having, for example, higher adhesion to the conductive layer 152b than the insulating layer 175. As the conductive layer 152a, for example, an oxide containing any one or more selected from indium, tin, zinc, gallium, titanium, aluminum, and silicon can be used. For example, indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide containing gallium, titanium oxide, indium titanium oxide, zinc titanate, aluminum zinc oxide, indium zinc oxide containing gallium, indium zinc oxide containing aluminum, indium tin oxide containing silicon, and indium zinc oxide containing silicon, etc., any one or more of the conductive oxides can be preferably used. Thus, peeling of the conductive layer 152b can be suppressed. Also, the conductive layer 152b can be configured not to be in contact with the insulating layer 175.

[0247] The conductive layer 152b is a layer with a higher reflectance for visible light (for example, the reflectance for light of a predetermined wavelength within the range of 400 nm or more and less than 750 nm) than the conductive layer 151, the conductive layer 152a, and the conductive layer 152c. The reflectance of the conductive layer 152b for visible light can be, for example, 70% or more and 100% or less, preferably 80% or more and 100% or less, and more preferably 90% or more and 100% or less. Also, as the conductive layer 152b, a material with a higher reflectance for visible light than aluminum can be used. Specifically, as the conductive layer 152b, for example, silver or an alloy containing silver can be used. Examples of the alloy containing silver include an alloy of silver, palladium, and copper (APC). As described above, the display device 100 can be made into a display device with high light extraction efficiency. Note that a metal other than silver may be used as the conductive layer 152b.

[0248] When the conductive layer 151 and the conductive layer 152 function as anodes, the conductive layer 152c is preferably a layer with a large work function. The conductive layer 152c is, for example, a layer with a larger work function than the conductive layer 152b. As the conductive layer 152c, for example, the same material as that used for the conductive layer 152a can be used. For example, a configuration can be adopted in which the same type of material is used for the conductive layer 152a and the conductive layer 152c. For example, when indium tin oxide is used for the conductive layer 152a, indium tin oxide can also be used for the conductive layer 152c.

[0249] Note that when the conductive layer 151 and the conductive layer 152 function as cathodes, the conductive layer 152c is preferably a layer with a small work function. The conductive layer 152c is, for example, a layer with a smaller work function than the conductive layer 152b.

[0250] Further, the conductive layer 152c is preferably a layer having a high transmittance for visible light (for example, the transmittance for light of a predetermined wavelength within the range of 400 nm or more and less than 750 nm). For example, the transmittance of the conductive layer 152c for visible light is preferably higher than the transmittance of the conductive layer 151 and the conductive layer 152b for visible light. For example, the transmittance of the conductive layer 152c for visible light can be 60% or more and 100% or less, preferably 70% or more and 100% or less, and more preferably 80% or more and 100% or less. As described above, among the light emitted from the organic compound layer 103, the light absorbed by the conductive layer 152c can be reduced. Further, as described above, the conductive layer 152b under the conductive layer 152c can be a layer having a high reflectance for visible light. Therefore, the display device 100 can be a display device with high light extraction efficiency.

[0251] Subsequently, an example of a method for manufacturing the display device 100 having the configuration shown in FIG. 3(A) will be described with reference to FIGS. 5 to 10. The light-emitting device included in the display device 100 has an organic layer formed by a manufacturing process including a treatment using water. By using the organic compound of one aspect of the present invention for the organic layer of the light-emitting device included in the display device of one aspect of the present invention, even when manufactured by a manufacturing method including a treatment using water, problems such as dissolution of the layer containing the organic compound and penetration of the chemical solution into the layer using the organic compound can be prevented, and a light-emitting device with good characteristics can be provided.

[0252] [Example of manufacturing method] The thin films (insulating films, semiconductor films, conductive films, etc.) constituting the display device can be formed using a sputtering method, a chemical vapor deposition (CVD) method, a vacuum evaporation method, a pulsed laser deposition (PLD) method, an ALD method, or the like. As the CVD method, there are a plasma enhanced chemical vapor deposition (PECVD) method and a thermal CVD method. Further, one of the thermal CVD methods is a metal organic chemical vapor deposition (MOCVD) method.

[0253] In addition, thin films (such as insulating films, semiconductor films, and conductive films) constituting the display device can be formed by wet film formation methods such as spin coating, dipping, spray coating, inkjet, dispensing, screen printing, offset printing, doctor blade method, slit coating, roll coating, curtain coating, or knife coating.

[0254] In particular, for the fabrication of light-emitting devices, vacuum processes such as vapor deposition and solution processes such as spin coating and inkjet can be used. Examples of vapor deposition methods include physical vapor deposition (PVD) methods such as sputtering, ion plating, ion beam evaporation, molecular beam epitaxy, and vacuum evaporation, and chemical vapor deposition (CVD) methods. In particular, for functional layers (such as hole injection layers, hole transport layers, hole blocking layers, light-emitting layers, electron blocking layers, electron transport layers, and electron injection layers) included in organic compound layers, they can be formed by methods such as vapor deposition (such as vacuum evaporation), coating methods (such as dip coating, die coating, bar coating, spin coating, spray coating), and printing methods (such as inkjet, screen (stencil printing), offset (lithographic printing), flexo (letterpress printing), gravure, or microcontact printing).

[0255] When processing the thin films constituting the display device, for example, it can be processed using a lithography method. Alternatively, the thin film may be processed by a nanoimprint method, sandblasting method, lift-off method, etc. Also, island-shaped thin films may be directly formed by a film formation method using a shielding mask such as a metal mask.

[0256] As the lithography method, for example, a photolithography method can be used. Typically, there are the following two representative photolithography methods. One is a method of forming a resist mask on the thin film to be processed, processing the thin film by, for example, etching, and then removing the resist mask. The other is a method of forming a photosensitive thin film and then performing exposure and development to process the thin film into a desired shape.

[0257] In photolithography, the light used for exposure can be, for example, i-line (wavelength 365 nm), g-line (wavelength 436 nm), h-line (wavelength 405 nm), or a mixture of these. In addition, ultraviolet light, KrF laser light, ArF laser light, etc. can also be used. Further, exposure may be performed by immersion lithography technology. Also, as the light used for exposure, extreme ultraviolet (EUV) light or X-rays may be used. Instead of the light used for exposure, an electron beam can also be used. Using extreme ultraviolet light, X-rays, or an electron beam is preferable because extremely fine processing becomes possible. Note that when performing exposure by scanning a beam such as an electron beam, a photomask is not required.

[0258] For etching the thin film, a dry etching method, a wet etching method, a sandblasting method, or the like can be used.

[0259] First, as shown in FIG. 5(A), an insulating layer 171 is formed on a substrate (not shown). Subsequently, a conductive layer 172 and a conductive layer 179 are formed on the insulating layer 171, and an insulating layer 173 is formed on the insulating layer 171 so as to cover the conductive layer 172 and the conductive layer 179. Subsequently, an insulating layer 174 is formed on the insulating layer 173, and an insulating layer 175 is formed on the insulating layer 174.

[0260] As the substrate, a substrate having heat resistance sufficient to withstand at least subsequent heat treatment can be used. When using an insulating substrate as the substrate, a glass substrate, a quartz substrate, a sapphire substrate, a ceramic substrate, an organic resin substrate, or the like can be used. In addition, a single crystal semiconductor substrate made of silicon or silicon carbide, a polycrystalline semiconductor substrate, a compound semiconductor substrate such as silicon germanium, a semiconductor substrate such as an SOI substrate can be used.

[0261] Subsequently, as shown in FIG. 5(A), openings reaching the conductive layer 172 are formed in the insulating layer 175, the insulating layer 174, and the insulating layer 173. Subsequently, plugs 176 are formed so as to fill the openings.

[0262] Subsequently, as shown in FIG. 5(A), a conductive film 151f, which will later become the conductive layers 151R, 151G, 151B, and 151C, is formed on the plug 176 and on the insulating layer 175. For forming the conductive film 151f, for example, a sputtering method or a vacuum evaporation method can be used. Also, as the conductive film 151f, for example, a metal material can be used.

[0263] Subsequently, as shown in FIG. 5(A), a conductive film 152f, which will later become the conductive layers 152R, 152G, 152B, and 152C, is formed on the conductive film 151f. For forming the conductive film 152f, for example, a sputtering method or a vacuum evaporation method can be used. Also, as the conductive film 152f, for example, a conductive oxide can be used. Or, a laminated structure of a film using a metal material and a film using a conductive oxide on the said film can be applied as the conductive film 152f. For example, a laminated structure of a film using titanium, silver, or an alloy containing silver and a film using a conductive oxide on the said film can be applied as the conductive film 152f.

[0264] Also, for forming the conductive film 152f, an ALD method can be used. In this case, as the conductive film 152f, an oxide having any one or more selected from indium, tin, zinc, gallium, titanium, aluminum, and silicon can be used. In this case, the introduction of a precursor (generally sometimes called a precursor or a metal precursor, etc.), the purge of the said precursor, the introduction of an oxidizing agent (generally sometimes called a reactant, a reactant, or a non-metal precursor, etc.), and the purge of the said oxidizing agent are taken as one cycle, and by repeating the said cycle, the conductive film 152f can be formed. Here, when forming an oxide film containing a plurality of metals such as indium tin oxide as the conductive film 152f, the metal composition can be controlled by varying the number of cycles for each type of precursor.

[0265] For example, when forming an indium tin oxide film as the conductive film 152f, after introducing a precursor containing indium, the precursor is purged and an oxidizing agent is introduced to form an In-O film. Next, after introducing a precursor containing tin, the precursor is purged and an oxidizing agent is introduced to form a Sn-O film. Here, by making the number of cycles of In-O film formation larger than the number of cycles of Sn-O film formation, the number of indium atoms contained in the conductive film 152f can be made larger than the number of tin atoms.

[0266] Also, for example, when forming a zinc oxide film as the conductive film 152f, a Zn-O film is formed by the above procedure. Also, for example, when forming an aluminum zinc oxide film as the conductive film 152f, a Zn-O film and an Al-O film are each formed by the above procedure. Also, for example, when forming a titanium oxide film as the conductive film 152f, a Ti-O film is formed by the above procedure. Also, for example, when forming an indium tin oxide film containing silicon as the conductive film 152f, an In-O film, a Sn-O film, and a Si-O film are formed by the above procedure. Also, for example, when forming a zinc oxide film containing gallium, a Ga-O film and a Zn-O film are formed by the above procedure.

[0267] As a precursor containing indium, for example, triethylindium, trimethylindium, or [1,1,1-trimethyl-N-(trimethylsilyl)amide]-indium can be used. As a precursor containing tin, for example, tin chloride, or tetrakis(dimethylamide)tin can be used. As a precursor containing zinc, for example, diethylzinc, or dimethylzinc can be used. As a precursor containing gallium, for example, triethylgallium can be used. As a precursor containing titanium, for example, titanium chloride, tetrakis(dimethylamide)titanium, or titanium tetra-isopropyl can be used. As a precursor containing aluminum, for example, aluminum chloride, or trimethylaluminum can be used. As a precursor containing silicon, trisilylamine, bis(diethylamino)silane, tris(dimethylamino)silane, bis(tert-butylamino)silane, or bis(ethylmethylamino)silane can be used. Further, as the oxidizing agent, water vapor, oxygen plasma, or ozone gas can be used.

[0268] Subsequently, as shown in FIG. 5(A), a resist mask 191 is formed on the conductive film 151f and the conductive film 152f. The resist mask 191 can be formed by applying a photosensitive material (photoresist) and performing exposure and development.

[0269] Subsequently, as shown in FIG. 5(B), for example, the conductive film 151f and the conductive film 152f in a region that does not overlap with the resist mask 191 are removed using, for example, an etching method, specifically, for example, a dry etching method, to form a pixel electrode having a conductive layer 151 and a conductive layer 152. When the conductive film 151f includes a layer using a conductive oxide such as indium tin oxide, the layer may be removed using a wet etching method. Thereby, the conductive layer 151 and the conductive layer 152 are formed. When a part of the conductive film 151f is removed by a dry etching method, for example, a recess may be formed in a region that does not overlap with the conductive layer 151 of the insulating layer 175.

[0270] Note that after processing the conductive film 152f using a lithography method to form the conductive layer 152R, the conductive layer 152G, the conductive layer 152B, and the conductive layer 152C, the conductive film 151f may be processed using the conductive layer 152R, the conductive layer 152G, the conductive layer 152B, and the conductive layer 152C as masks. Specifically, for example, after forming a resist mask, a part of the conductive film 152f is removed by an etching method. The conductive film 152f can be removed, for example, by a wet etching method. Note that the conductive film 152f may be removed by a dry etching method. Thereafter, the conductive film 151f may be removed by a wet etching method.

[0271] Here, it is preferable to perform a hydrophobization treatment on the conductive layer 152. In the hydrophobization treatment, the surface to be treated can be changed from hydrophilic to hydrophobic, or the hydrophobicity of the surface to be treated can be enhanced. By performing the hydrophobization treatment on the conductive layer 152, the adhesion between the conductive layer 152 and the organic compound layer 103 formed in a later step can be enhanced, and film peeling can be suppressed. Note that the hydrophobization treatment may not be performed.

[0272] Subsequently, as shown in FIG. 5(C), the resist mask 191 is removed. The resist mask 191 can be removed, for example, by ashing using oxygen plasma. Alternatively, oxygen gas and a Group 18 element such as CF4, C4F8, SF6, CHF3, Cl2, H2O, BCl3, or He may be used. Alternatively, the resist mask 191 may be removed by wet etching.

[0273] Subsequently, as shown in FIG. 5(D), an insulating film 156f that will later become the insulating layer 156R, the insulating layer 156G, the insulating layer 156B, and the insulating layer 156C is formed on the conductive layer 151R and the conductive layer 152R, on the conductive layer 151G and the conductive layer 152G, on the conductive layer 151B and the conductive layer 152B, on the conductive layer 151C and the conductive layer 152C, and on the insulating layer 175. For the formation of the insulating film 156f, for example, a CVD method, an ALD method, a sputtering method, or a vacuum evaporation method can be used.

[0274] For the insulating film 156f, an inorganic material can be used. As the insulating film 156f, for example, an inorganic insulating film such as an oxide insulating film, a nitride insulating film, an oxynitride insulating film, or a nitroxide insulating film can be used. For example, as the insulating film 156f, an oxide insulating film, a nitride insulating film, an oxynitride insulating film, or a nitroxide insulating film containing silicon can be used. For example, silicon oxynitride can be used as the insulating film 156f.

[0275] Subsequently, as shown in FIG. 5(E), by processing the insulating film 156f, an insulating layer 156R, an insulating layer 156G, an insulating layer 156B, and an insulating layer 156C are formed. For example, by performing etching substantially uniformly on the upper surface of the insulating film 156f, the insulating layer 156 can be formed. Such uniform etching and planarization is also referred to as etch-back processing. Note that the insulating layer 156 may be formed using a lithography method.

[0276] Subsequently, as shown in FIG. 6(A), an organic compound film 103Rf that will later become the organic compound layer 103R is formed on the conductive layer 152R, on the conductive layer 152G, on the conductive layer 152B, on the insulating layer 156R, on the insulating layer 156G, on the insulating layer 156B, and on the insulating layer 175.

[0277] As shown in FIG. 6(A), the organic compound film 103Rf is not formed on the conductive layer 152C. For example, by using a mask (also referred to as an area mask or a rough metal mask, etc., distinguished from a fine metal mask) for defining the film formation area, the organic compound film 103Rf can be formed only in a desired region. By adopting a film formation process using an area mask and a processing process using a resist mask, a light-emitting device can be manufactured with a relatively simple process.

[0278] The organic compound film 103Rf can be formed, for example, by a vapor deposition method, specifically, a vacuum vapor deposition method. Further, the organic compound film 103Rf may be formed by a method such as a transfer method, a printing method, an inkjet method, or a coating method.

[0279] Subsequently, as shown in FIG. 6(A), a sacrificial film 158Rf that will later become the sacrificial layer 158R and a mask film 159Rf that will later become the mask layer 159R are sequentially formed on the organic compound film 103Rf, on the conductive layer 152C, and on the insulating layer 175.

[0280] In this embodiment, an example of forming a mask film with a two-layer structure of a sacrificial film 158Rf and a mask film 159Rf is shown. However, the mask film may have a single-layer structure or a laminated structure of three or more layers.

[0281] By providing a sacrificial layer on the organic compound film 103Rf, damage to the organic compound film 103Rf during the manufacturing process of the display device can be reduced, and the reliability of the light-emitting device can be enhanced.

[0282] For the sacrificial film 158Rf, a film with high resistance to the processing conditions of the organic compound film 103Rf is used. Specifically, a film with a large etching selectivity ratio with respect to the organic compound film 103Rf is used. For the mask film 159Rf, a film with a large etching selectivity ratio with respect to the sacrificial film 158Rf is used.

[0283] Also, the sacrificial film 158Rf and the mask film 159Rf are formed at a temperature lower than the heat-resistant temperature of the organic compound film 103Rf. As the substrate temperature when forming the sacrificial film 158Rf and the mask film 159Rf, typically, they are each 200°C or lower, preferably 150°C or lower, more preferably 120°C or lower, still more preferably 100°C or lower, and even more preferably 80°C or lower.

[0284] It is preferable to use a film that can be removed by a wet etching method for the sacrificial film 158Rf and the mask film 159Rf. By using the wet etching method, damage to the organic compound film 103Rf during the processing of the sacrificial film 158Rf and the mask film 159Rf can be reduced compared to the case of using a dry etching method.

[0285] For the formation of the sacrificial film 158Rf and the mask film 159Rf, for example, a sputtering method, an ALD method (thermal ALD method, PEALD method), a CVD method, or a vacuum evaporation method can be used. Also, the above-described wet film formation method may be used.

[0286] Note that the sacrificial film 158Rf formed in contact with the organic compound film 103Rf is preferably formed using a formation method that causes less damage to the organic compound film 103Rf than the mask film 159Rf. For example, it is preferable to form the sacrificial film 158Rf using an ALD method or a vacuum evaporation method rather than a sputtering method.

[0287] As the sacrificial film 158Rf and the mask film 159Rf, one or more of, for example, a metal film, an alloy film, a metal oxide film, a semiconductor film, an organic insulating film, and an inorganic insulating film can be used respectively.

[0288] For the sacrificial film 158Rf and the mask film 159Rf, respectively, for example, metal materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, titanium, aluminum, yttrium, zirconium, and tantalum, or alloy materials containing the metal materials can be used. In particular, it is preferable to use a low melting point material such as aluminum or silver. By using a metal material capable of shielding ultraviolet rays for one or both of the sacrificial film 158Rf and the mask film 159Rf, irradiation of the organic compound film 103Rf with ultraviolet rays can be suppressed, and deterioration of the organic compound film 103Rf can be suppressed, which is preferable.

[0289] Also, for the sacrificial film 158Rf and the mask film 159Rf, respectively, metal oxides such as In-Ga-Zn oxide, indium oxide, In-Zn oxide, In-Sn oxide, indium titanate (In-Ti oxide), indium tin zinc oxide (In-Sn-Zn oxide), indium titanium zinc oxide (In-Ti-Zn oxide), indium gallium tin zinc oxide (In-Ga-Sn-Zn oxide), and indium tin oxide containing silicon can be used.

[0290] Note that instead of the above-mentioned gallium, an element M (M is one or more selected from aluminum, silicon, boron, yttrium, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, or magnesium) may be used.

[0291] Also, as the sacrificial film and the mask film, it is preferable to use a film containing a material having light-shielding properties against light, particularly ultraviolet light. As the material having light-shielding properties, various materials such as a metal, an insulator, a semiconductor, and a semimetal having light-shielding properties against ultraviolet light can be used. However, since a part or all of the sacrificial film and the mask film are removed in a later process, it is preferably a film that can be processed by etching, and particularly preferably has good processability.

[0292] As the sacrificial film and the mask film, for example, semiconductor materials such as silicon or germanium are preferable because they have high affinity with the semiconductor manufacturing process. Alternatively, oxides or nitrides of the above semiconductor materials can be used. Alternatively, non-metal materials such as carbon or their compounds can be used. Alternatively, metals such as titanium, tantalum, tungsten, chromium, aluminum, or alloys containing one or more of these can be mentioned. Alternatively, oxides containing the above metals such as titanium oxide or chromium oxide, or nitrides such as titanium nitride, chromium nitride, or tantalum nitride can be used.

[0293] By using a film containing a material having light-shielding properties against ultraviolet light for the sacrificial film and the mask film, for example, it is possible to suppress the irradiation of ultraviolet light to the organic compound layer in the exposure process. By suppressing the damage of the organic compound layer by ultraviolet light, the reliability of the light-emitting device can be improved.

[0294] Note that the film containing a material having light-shielding properties against ultraviolet light can also exhibit the same effect when used as the material of the inorganic insulating film 125f described later.

[0295] In addition, various inorganic insulating films can be used as the sacrificial film 158Rf and the mask film 159Rf, respectively. In particular, the oxide insulating film is preferable because it has higher adhesion to the organic compound film 103Rf than the nitride insulating film. For example, inorganic insulating materials such as aluminum oxide, hafnium oxide, and silicon oxide can be used for the sacrificial film 158Rf and the mask film 159Rf, respectively. As the sacrificial film 158Rf and the mask film 159Rf, for example, an aluminum oxide film can be formed using the ALD method. Using the ALD method is preferable because damage to the substrate (especially the organic compound layer) can be reduced.

[0296] For example, as the sacrificial film 158Rf, an inorganic insulating film (e.g., an aluminum oxide film) formed using the ALD method can be used, and as the mask film 159Rf, an inorganic film (e.g., an In-Ga-Zn oxide film, an aluminum film, or a tungsten film) formed using the sputtering method can be used.

[0297] Note that the same inorganic insulating film can be used for both the sacrificial film 158Rf and the inorganic insulating layer 125 formed later. For example, an aluminum oxide film formed using the ALD method can be used for both the sacrificial film 158Rf and the inorganic insulating layer 125. Here, the same film formation conditions may be applied to the sacrificial film 158Rf and the inorganic insulating layer 125, or different film formation conditions may be applied to each other. For example, by forming the sacrificial film 158Rf under the same conditions as the inorganic insulating layer 125, the sacrificial film 158Rf can be made into an insulating layer with high barrier properties against at least one of water and oxygen. On the other hand, since the sacrificial film 158Rf is a layer that is mostly or entirely removed in a later process, it is preferably easy to process. For this reason, the sacrificial film 158Rf is preferably formed under conditions of a lower substrate temperature during film formation than the inorganic insulating layer 125.

[0298] One or both of the sacrificial film 158Rf and the mask film 159Rf may be made of an organic material. For example, as the organic material, a material that can be dissolved in a solvent that is chemically stable with respect to at least the film located at the top of the organic compound film 103Rf may be used. In particular, a material that can be dissolved in water or alcohol can be preferably used. When forming a film of such a material, it is preferable to perform a heat treatment for evaporating the solvent after coating in a wet film-forming method in a state of being dissolved in a solvent such as water or alcohol. At this time, by performing the heat treatment under a reduced pressure atmosphere, the solvent can be removed at a low temperature and in a short time, so that thermal damage to the organic compound film 103Rf can be reduced, which is preferable.

[0299] For the sacrificial film 158Rf and the mask film 159Rf, organic resins such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinyl pyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, alcohol-soluble polyamide resin, or fluororesin such as perfluoropolymer may be used respectively.

[0300] For example, as the sacrificial film 158Rf, an organic film (for example, a PVA film) formed by using either a vapor deposition method or the above-described wet film-forming method can be used, and as the mask film 159Rf, an inorganic film (for example, a silicon nitride film) formed by using a sputtering method can be used.

[0301] Subsequently, as shown in FIG. 6(A), a resist mask 190R is formed on the mask film 159Rf. The resist mask 190R can be formed by applying a photosensitive material (photoresist) and performing exposure and development.

[0302] The resist mask 190R may be produced using either a positive resist material or a negative resist material.

[0303] The resist mask 190R is provided at a position overlapping the conductive layer 152R. The resist mask 190R is preferably also provided at a position overlapping the conductive layer 152C. Thereby, it is possible to suppress the conductive layer 152C from being damaged during the manufacturing process of the display device. Note that the resist mask 190R may not be provided on the conductive layer 152C. Further, as shown in the cross-sectional view between B1 and B2 in FIG. 6(A), the resist mask 190R is preferably provided so as to cover from the end of the organic compound film 103Rf to the end of the conductive layer 152C (the end on the organic compound film 103Rf side).

[0304] Subsequently, as shown in FIG. 6(B), using the resist mask 190R, a part of the mask film 159Rf is removed to form the mask layer 159R. The mask layer 159R remains on the conductive layer 152R and on the conductive layer 152C. Thereafter, the resist mask 190R is removed. Subsequently, using the mask layer 159R as a mask (also referred to as a hard mask), a part of the sacrificial film 158Rf is removed to form the sacrificial layer 158R.

[0305] The sacrificial film 158Rf and the mask film 159Rf can each be processed by a wet etching method or a dry etching method. The processing of the sacrificial film 158Rf and the mask film 159Rf is preferably performed by isotropic etching.

[0306] By using the wet etching method, the damage applied to the organic compound film 103Rf during the processing of the sacrificial film 158Rf and the mask film 159Rf can be reduced as compared with the case of using the dry etching method. When using the wet etching method, for example, it is preferable to use a chemical solution using a developer, an aqueous solution of tetramethylammonium hydroxide (TMAH), dilute hydrofluoric acid, oxalic acid, phosphoric acid, acetic acid, nitric acid, or a mixed liquid thereof.

[0307] In the processing of the mask film 159Rf, since the organic compound film 103Rf is not exposed, the range of selection of the processing method is wider than that of the processing of the sacrificial film 158Rf. Specifically, when oxygen-containing gas is used as the etching gas during the processing of the mask film 159Rf, the deterioration of the organic compound film 103Rf can be more effectively suppressed.

[0308] In addition, when the dry etching method is used in the processing of the sacrificial film 158Rf, the deterioration of the organic compound film 103Rf can be suppressed by not using oxygen-containing gas as the etching gas. When the dry etching method is used, for example, it is preferable to use a gas containing a Group 18 element such as CF4, C4F8, SF6, CHF3, Cl2, H2O, BCl3, or He as the etching gas.

[0309] For example, when an aluminum oxide film formed by the ALD method is used as the sacrificial film 158Rf, a part of the sacrificial film 158Rf can be removed by the dry etching method using CHF3 and He, or CHF3, He, and CH4. When an In-Ga-Zn oxide film formed by the sputtering method is used as the mask film 159Rf, a part of the mask film 159Rf can be removed by the wet etching method using diluted phosphoric acid. Alternatively, a part of the mask film 159Rf may be removed by the dry etching method using CH4 and Ar. Alternatively, a part of the mask film 159Rf can be removed by the wet etching method using diluted phosphoric acid. When a tungsten film formed by the sputtering method is used as the mask film 159Rf, a part of the mask film 159Rf can be removed by the dry etching method using SF6, CF4 and O2, or CF4, Cl2 and O2.

[0310] The resist mask 190R can be removed in the same manner as the resist mask 191. For example, it can be removed by ashing using oxygen plasma. Alternatively, oxygen gas and a Group 18 element such as CF4, C4F8, SF6, CHF3, Cl2, H2O, BCl3, or He may be used. Alternatively, the resist mask 190R may be removed by wet etching. At this time, since the sacrificial film 158Rf is located on the outermost surface and the organic compound film 103Rf is not exposed, damage to the organic compound film 103Rf can be suppressed in the process of removing the resist mask 190R. In addition, the range of selection of the method for removing the resist mask 190R can be widened.

[0311] Subsequently, as shown in FIG. 6(B), the organic compound film 103Rf is processed to form the organic compound layer 103R. For example, the mask layer 159R and the sacrificial layer 158R are used as a hard mask to remove a part of the organic compound film 103Rf to form the organic compound layer 103R.

[0312] As a result, as shown in FIG. 6(B), a stacked structure of the organic compound layer 103R, the sacrificial layer 158R, and the mask layer 159R remains on the conductive layer 152R. Also, the conductive layer 152G and the conductive layer 152B are exposed.

[0313] FIG. 6(B) shows an example in which the end portion of the organic compound layer 103R is located inside the end portion of the conductive layer 152R. With such a configuration, miniaturization of the pixel is possible, and a high-definition display can be created. Although not shown in FIG. 6(B), depending on the above etching process, a recess may be formed in a region of the insulating layer 175 that does not overlap with the organic compound layer 103R.

[0314] As described above, it is preferable that the resist mask 190R is provided so as to cover from the end of the organic compound layer 103R to the end of the conductive layer 152C (the end on the organic compound layer 103R side) between the dashed-dotted lines B1 - B2. Thereby, as shown in FIG. 6(B), the sacrificial layer 158R and the mask layer 159R are provided so as to cover from the end of the organic compound layer 103R to the end of the conductive layer 152C (the end on the organic compound layer 103R side) between the dashed-dotted lines B1 - B2. Therefore, for example, between the dashed-dotted lines B1 - B2, it is possible to suppress the exposure of the insulating layer 175. Thereby, it is possible to prevent a part of the insulating layer 175, the insulating layer 174, and the insulating layer 173 from being removed by etching or the like and the conductive layer 179 from being exposed. For this reason, it is possible to suppress the conductive layer 179 from being electrically connected to other conductive layers unintentionally. For example, it is possible to suppress a short circuit between the conductive layer 179 and the common electrode 155 formed in a later process.

[0315] The processing of the organic compound film 103Rf is preferably performed by anisotropic etching. In particular, anisotropic dry etching is preferable. Alternatively, wet etching may be used.

[0316] When using the dry etching method, by not using a gas containing oxygen as the etching gas, deterioration of the organic compound film 103Rf can be suppressed.

[0317] Further, a gas containing oxygen may be used as the etching gas. Since the etching gas contains oxygen, the etching rate can be increased. Therefore, etching can be performed under low-power conditions while maintaining the etching rate at a sufficient speed. For this reason, damage to the organic compound film 103Rf can be suppressed. Furthermore, problems such as adhesion of reaction products generated during etching can be suppressed.

[0318] When using a dry etching method, for example, it is preferable to use a gas containing one or more of H2, CF4, C4F8, SF6, CHF3, Cl2, H2O, BCl3, or Group 18 elements such as He and Ar as the etching gas. Alternatively, it is preferable to use a gas containing one or more of these and a gas containing oxygen as the etching gas. Alternatively, oxygen gas may be used as the etching gas. Specifically, for example, a gas containing H2 and Ar, or a gas containing CF4 and He can be used as the etching gas. Also, for example, a gas containing CF4, He, and oxygen can be used as the etching gas. Also, for example, a gas containing H2 and Ar and a gas containing oxygen can be used as the etching gas.

[0319] As described above, in one aspect of the present invention, a resist mask 190R is formed on the mask film 159Rf, and a part of the mask film 159Rf is removed using the resist mask 190R to form the mask layer 159R. Then, using the mask layer 159R as a hard mask, a part of the organic compound film 103Rf is removed to form the organic compound layer 103R. Therefore, it can be said that the organic compound layer 103R is formed by processing the organic compound film 103Rf using a lithography method. Note that a part of the organic compound film 103Rf may be removed using the resist mask 190R. Then, the resist mask 190R may be removed.

[0320] Next, for example, it is preferable to perform a hydrophobization treatment on the conductive layer 152G. When processing the organic compound film 103Rf, for example, the surface state of the conductive layer 152G may change to hydrophilic. By performing a hydrophobization treatment on the conductive layer 152G, for example, the adhesion between the conductive layer 152G and a layer formed in a later process (here, the organic compound layer 103G) can be enhanced, and film peeling can be suppressed. Note that the hydrophobization treatment may not be performed.

[0321] Subsequently, as shown in Fig. 7(A), an organic compound film 103Gf that will later become the organic compound layer 103G is formed on the conductive layer 152G, on the conductive layer 152B, on the insulating layer 156R, on the insulating layer 156G, on the insulating layer 156B, on the mask layer 159R, and on the insulating layer 175.

[0322] The organic compound film 103Gf can be formed by the same method as that used for forming the organic compound film 103Rf. Also, the organic compound film 103Gf can have the same configuration as the organic compound film 103Rf.

[0323] Subsequently, as shown in Fig. 7(A), on the organic compound film 103Gf and on the mask layer 159R, a sacrificial film 158Gf that will later become the sacrificial layer 158G and a mask film 159Gf that will later become the mask layer 159G are sequentially formed. Then, a resist mask 190G is formed. The materials and formation methods of the sacrificial film 158Gf and the mask film 159Gf are the same as the conditions applicable to the sacrificial film 158Rf and the mask film 159Rf. The materials and formation methods of the resist mask 190G are the same as the conditions applicable to the resist mask 190R.

[0324] The resist mask 190G is provided at a position overlapping the conductive layer 152G.

[0325] Subsequently, as shown in Fig. 7(B), using the resist mask 190G, a part of the mask film 159Gf is removed to form the mask layer 159G. The mask layer 159G remains on the conductive layer 152G. Then, the resist mask 190G is removed. Subsequently, using the mask layer 159G as a mask, a part of the sacrificial film 158Gf is removed to form the sacrificial layer 158G. Subsequently, the organic compound film 103Gf is processed to form the organic compound layer 103G. For example, using the mask layer 159G and the sacrificial layer 158G as hard masks, a part of the organic compound film 103Gf is removed to form the organic compound layer 103G.

[0326] As a result, as shown in FIG. 7(B), a laminated structure of the organic compound layer 103G, the sacrificial layer 158G, and the mask layer 159G remains on the conductive layer 152G. Also, the mask layer 159R and the conductive layer 152B are exposed.

[0327] Next, for example, it is preferable to perform a hydrophobization treatment on the conductive layer 152B. When processing the organic compound film 103Gf, for example, the surface state of the conductive layer 152B may change to hydrophilic. By performing a hydrophobization treatment on the conductive layer 152B, for example, the adhesion between the conductive layer 152B and a layer formed in a subsequent process (here, the organic compound layer 103B) can be enhanced, and film peeling can be suppressed. Note that the hydrophobization treatment may not be performed.

[0328] Subsequently, as shown in FIG. 7(C), an organic compound film 103Bf that will later become the organic compound layer 103B is formed on the conductive layer 152B, on the mask layer 159R, on the insulating layer 156R, on the insulating layer 156G, on the insulating layer 156B, on the mask layer 159G, and on the insulating layer 175.

[0329] The organic compound film 103Bf can be formed by the same method as the method used to form the organic compound film 103Rf. Also, the organic compound film 103Bf can have the same configuration as the organic compound film 103Rf.

[0330] Subsequently, as shown in FIG. 7(C), a sacrificial film 158Bf that will later become the sacrificial layer 158B and a mask film 159Bf that will later become the mask layer 159B are sequentially formed on the organic compound film 103Bf and on the mask layer 159R. Thereafter, a resist mask 190B is formed. The materials and formation methods of the sacrificial film 158Bf and the mask film 159Bf are the same as the conditions applicable to the sacrificial film 158Rf and the mask film 159Rf. The materials and formation methods of the resist mask 190B are the same as the conditions applicable to the resist mask 190R.

[0331] The resist mask 190B is provided at a position overlapping the conductive layer 152B.

[0332] Subsequently, as shown in FIG. 7(D), using the resist mask 190B, a part of the mask film 159Bf is removed to form the mask layer 159B. The mask layer 159B remains on the conductive layer 152B. Thereafter, the resist mask 190B is removed. Subsequently, using the mask layer 159B as a mask, a part of the sacrificial film 158Bf is removed to form the sacrificial layer 158B. Subsequently, the organic compound film 103Bf is processed to form the organic compound layer 103B. For example, using the mask layer 159B and the sacrificial layer 158B as hard masks, a part of the organic compound film 103Bf is removed to form the organic compound layer 103B.

[0333] As a result, as shown in FIG. 7(D), a stacked structure of the organic compound layer 103B, the sacrificial layer 158B, and the mask layer 159B remains on the conductive layer 152B. Also, the mask layer 159R and the mask layer 159G are exposed.

[0334] Note that the side surfaces of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B are preferably perpendicular or substantially perpendicular to the formation surface. For example, the angle formed by the formation surface and these side surfaces is preferably 60 degrees or more and 90 degrees or less.

[0335] As described above, the distance between two adjacent ones of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B formed using the lithography method can be narrowed to 8 μm or less, 5 μm or less, 3 μm or less, 2 μm or less, or 1 μm or less. Here, the distance can be defined, for example, as the distance between two opposing end portions of two adjacent ones among the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B. By narrowing the distance between the island-shaped organic compound layers in this way, a display device having high definition and a large aperture ratio can be provided. Also, the distance between the first electrodes between adjacent light-emitting devices can be narrowed and can be, for example, 10 μm or less, 8 μm or less, 5 μm or less, 3 μm or less, 2 μm or less. Note that the distance between the first electrodes between adjacent light-emitting devices is preferably 2 μm or more and 5 μm or less.

[0336] Subsequently, as shown in FIG. 8(A), it is preferable to remove the mask layer 159R, the mask layer 159G, and the mask layer 159B. Depending on subsequent processes, the sacrificial layer 158R, the sacrificial layer 158G, the sacrificial layer 158B, the mask layer 159R, the mask layer 159G, and the mask layer 159B may remain in the display device. By removing the mask layer 159R, the mask layer 159G, and the mask layer 159B at this stage, it is possible to suppress the remaining of the mask layer 159R, the mask layer 159G, and the mask layer 159B in the display device. For example, when a conductive material is used for the mask layer 159R, the mask layer 159G, and the mask layer 159B, by removing the mask layer 159R, the mask layer 159G, and the mask layer 159B in advance, it is possible to suppress the generation of leakage current and the formation of capacitance due to the remaining mask layer 159R, the mask layer 159G, and the mask layer 159B.

[0337] In the present embodiment, the case of removing the mask layer 159R, the mask layer 159G, and the mask layer 159B is taken as an example for explanation, but the mask layer 159R, the mask layer 159G, and the mask layer 159B may not be removed. For example, when the mask layer 159R, the mask layer 159G, and the mask layer 159B contain a material having light-shielding properties with respect to ultraviolet rays as described above, it is preferable to proceed to the next step without removing them, thereby protecting the organic compound layer from ultraviolet rays.

[0338] For the mask layer removal process, the same method as the mask film processing process can be used. In particular, by using the wet etching method, compared with the case of using the dry etching method, when removing the mask layer, the damage to the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B can be reduced.

[0339] Alternatively, the mask layer may be removed by dissolving it in a solvent such as water or alcohol. Examples of alcohol include ethyl alcohol, methyl alcohol, isopropyl alcohol (IPA), or glycerin.

[0340] After removing the mask layer, a drying process may be performed to remove water contained in the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B, as well as water adsorbed on the surfaces of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B. For example, heat treatment can be performed under an inert gas atmosphere or a reduced pressure atmosphere. The heat treatment can be carried out at a temperature of 50°C or higher and 200°C or lower as the substrate temperature, preferably 60°C or higher and 150°C or lower, more preferably 70°C or higher and 120°C or lower. Setting a reduced pressure atmosphere is preferable because drying can be achieved at a lower temperature.

[0341] Subsequently, as shown in FIG. 8(B), an inorganic insulating film 125f that will later become the inorganic insulating layer 125 is formed so as to cover the organic compound layer 103R, the organic compound layer 103G, the organic compound layer 103B, the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B.

[0342] As described later, an insulating film 127f that will later become the insulating layer 127 is formed in contact with the upper surface of the inorganic insulating film 125f. For this reason, it is preferable that the upper surface of the inorganic insulating film 125f has high affinity for the material used for the insulating film (for example, a photosensitive resin composition containing an acrylic resin). In order to improve the affinity, it is preferable to perform surface treatment to hydrophobize (or increase the hydrophobicity of) the upper surface of the inorganic insulating film 125f. For example, it is preferable to perform treatment using a silylating agent such as hexamethyldisilazane (HMDS). By hydrophobizing the upper surface of the inorganic insulating film 125f in this way, the insulating film 127f can be formed with good adhesion. Note that, as the surface treatment, the aforementioned hydrophobization treatment may be performed.

[0343] Subsequently, as shown in FIG. 8(C), an insulating film 127f that will later become the insulating layer 127 is formed on the inorganic insulating film 125f.

[0344] The inorganic insulating film 125f and the insulating film 127f are preferably formed by a forming method that causes little damage to the organic compound layers 103R, 103G, and 103B. In particular, since the inorganic insulating film 125f is formed in contact with the side surfaces of the organic compound layers 103R, 103G, and 103B, it is preferably formed by a forming method that causes less damage to the organic compound layers 103R, 103G, and 103B than the insulating film 127f.

[0345] Also, the inorganic insulating film 125f and the insulating film 127f are each formed at a temperature lower than the heat resistance temperature of the organic compound layers 103R, 103G, and 103B. Further, by increasing the substrate temperature during the formation of the inorganic insulating film 125f, even if the film thickness is thin, a film with a low impurity concentration and high barrier properties against at least one of water and oxygen can be obtained.

[0346] The substrate temperature when forming the inorganic insulating film 125f and the insulating film 127f is preferably 60°C or higher, 80°C or higher, 100°C or higher, or 120°C or higher, and 200°C or lower, 180°C or lower, 160°C or lower, 150°C or lower, or 140°C or lower, respectively.

[0347] As the inorganic insulating film 125f, it is preferable to form an insulating film with a thickness of 3 nm or more, 5 nm or more, or 10 nm or more, and 200 nm or less, 150 nm or less, 100 nm or less, or 50 nm or less within the above range of the substrate temperature.

[0348] The inorganic insulating film 125f is preferably formed using, for example, the ALD method. Using the ALD method is preferable because film formation damage can be reduced and a film with high coating properties can be formed. As the inorganic insulating film 125f, it is preferable to form an aluminum oxide film using, for example, the ALD method.

[0349] In addition, the inorganic insulating film 125f may be formed using a sputtering method, a CVD method, or a PECVD method, which have a higher film formation rate than the ALD method. Thereby, a highly reliable display device can be manufactured with high productivity.

[0350] The insulating film 127f is preferably formed using the above-described wet film formation method. The insulating film 127f is preferably formed using a photosensitive material, for example, by spin coating, and more specifically, is preferably formed using a photosensitive resin composition containing an acrylic resin.

[0351] The insulating film 127f is preferably formed using a resin composition having, for example, a polymer, an acid generator, and a solvent. The polymer is formed using one or more monomers and has a structure in which one or more structural units (also referred to as constituent units) are repeated regularly or irregularly. As the acid generator, one or both of a compound that generates an acid upon irradiation with light and a compound that generates an acid upon heating can be used. The resin composition may further have one or more of a photosensitizer, a sensitizer, a catalyst, an adhesion aid, a surfactant, and an antioxidant.

[0352] Further, it is preferable to perform a heat treatment (also referred to as pre-baking) after the formation of the insulating film 127f. The heat treatment is performed at a temperature lower than the heat resistance temperature of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B. The substrate temperature during the heat treatment is preferably 50°C or higher and 200°C or lower, more preferably 60°C or higher and 150°C or lower, and even more preferably 70°C or higher and 120°C or lower. Thereby, the solvent contained in the insulating film 127f can be removed.

[0353] Subsequently, exposure is performed to make a part of the insulating film 127f sensitive to visible light or ultraviolet light. Here, when a positive photosensitive resin composition containing an acrylic resin is used for the insulating film 127f, visible light or ultraviolet light is irradiated onto the regions where the insulating layer 127 will not be formed in the subsequent process. The insulating layer 127 is formed in the region sandwiched between any two of the conductive layers 152R, 152G, and 152B, and around the conductive layer 152C. Therefore, visible light or ultraviolet light is irradiated onto the conductive layer 152R, the conductive layer 152G, the conductive layer 152B, and the conductive layer 152C. Note that when a negative photosensitive material is used for the insulating film 127f, visible light or ultraviolet light is irradiated onto the regions where the insulating layer 127 will be formed.

[0354] The width of the insulating layer 127 to be formed later can be controlled by the exposure region on the insulating film 127f. In the present embodiment, processing is performed such that the insulating layer 127 has a portion overlapping with the upper surface of the conductive layer 151.

[0355] The light used for exposure preferably includes i-line (wavelength 365 nm). Further, the light used for exposure may include at least one of g-line (wavelength 436 nm) and h-line (wavelength 405 nm).

[0356] Here, by providing an oxygen barrier insulating layer (for example, an aluminum oxide film, etc.) as one or both of the sacrificial layers 158 (sacrificial layers 158R, 158G, and 158B) and the inorganic insulating film 125f, the diffusion of oxygen into the organic compound layers 103R, 103G, and 103B can be reduced. When the organic compound layer is irradiated with light (visible light or ultraviolet light), the organic compounds contained in the organic compound layer may be excited, and the reaction with oxygen contained in the atmosphere may be promoted. More specifically, in an atmosphere containing oxygen, when the organic compound layer is irradiated with light (visible light or ultraviolet light), oxygen may bind to the organic compounds contained in the organic compound layer. By providing the sacrificial layer 158 and the inorganic insulating film 125f on the island-shaped organic compound layer, the binding of oxygen in the atmosphere to the organic compounds contained in the organic compound layer can be reduced.

[0357] Subsequently, as shown in FIG. 9(A), development is performed to remove the exposed area of the insulating film 127f and form the insulating layer 127a. The insulating layer 127a is formed in a region sandwiched between any two of the conductive layer 152R, the conductive layer 152G, and the conductive layer 152B, and in a region surrounding the conductive layer 152C. Here, when an acrylic resin is used for the insulating film 127f, an alkaline solution can be used as the developer, for example, TMAH can be used.

[0358] Subsequently, residues (so-called scum) during development may be removed. For example, the residues can be removed by performing ashing using oxygen plasma.

[0359] Note that etching may be performed to adjust the height of the surface of the insulating layer 127a. The insulating layer 127a may be processed, for example, by ashing using oxygen plasma. Also, even when a non-photosensitive material is used for the insulating film 127f, for example, the height of the surface of the insulating film 127f can be adjusted by such ashing.

[0360] Subsequently, as shown in FIG. 9(B), an etching process is performed using the insulating layer 127a as a mask to remove a part of the inorganic insulating film 125f and reduce the film thickness of a part of the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B. As a result, an inorganic insulating layer 125 is formed under the insulating layer 127a. Also, the surfaces of the portions where the film thicknesses of the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B are thin are exposed. Hereinafter, the etching process using the insulating layer 127a as a mask may be referred to as the first etching process.

[0361] The first etching process can be performed by dry etching or wet etching. Note that when the inorganic insulating film 125f is formed using the same material as the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B, it is preferable because the first etching process can be performed in a batch.

[0362] By performing etching using the insulating layer 127a having a tapered shape on its side surface as a mask, the side surfaces of the inorganic insulating layer 125 and the upper end portions of the side surfaces of the sacrificial layers 158R, 158G, and 158B can be made into a tapered shape relatively easily.

[0363] When performing dry etching, it is preferable to use a chlorine-based gas. As the chlorine-based gas, Cl2, BCl3, SiCl4, CCl4, etc. can be used alone or in combination of two or more gases. Further, oxygen gas, hydrogen gas, helium gas, argon gas, etc. can be appropriately added to the above chlorine-based gas, either alone or in combination of two or more gases. By using dry etching, regions with a thin film thickness of the sacrificial layers 158R, 158G, and 158B can be formed with good in-plane uniformity.

[0364] As the dry etching apparatus, a dry etching apparatus having a high-density plasma source can be used. As the dry etching apparatus having a high-density plasma source, for example, an inductively coupled plasma (ICP) etching apparatus can be used. Alternatively, a capacitively coupled plasma (CCP) etching apparatus having parallel plate electrodes can be used. The capacitively coupled plasma etching apparatus having parallel plate electrodes may be configured to apply a high-frequency voltage to one of the parallel plate electrodes. Alternatively, it may be configured to apply a plurality of different high-frequency voltages to one of the parallel plate electrodes. Alternatively, it may be configured to apply high-frequency voltages of the same frequency to each of the parallel plate electrodes. Alternatively, it may be configured to apply high-frequency voltages of different frequencies to each of the parallel plate electrodes.

[0365] Further, when performing dry etching, by-products generated by dry etching may deposit on the upper surface and side surfaces of the insulating layer 127a, etc. For this reason, components contained in the etching gas, components contained in the inorganic insulating film 125f, components contained in the sacrificial layers 158R, 158G, and 158B, etc. may be contained in the insulating layer 127 after the display device is completed.

[0366] Also, it is preferable to perform the first etching process by wet etching. By using the wet etching method, the damage applied to the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B can be reduced as compared with the case of using the dry etching method. For example, wet etching can be performed using an alkaline solution. For example, TMAH, which is an alkaline solution, can be used for wet etching of an aluminum oxide film. In this case, wet etching can be performed by a paddle method. In addition, when the inorganic insulating film 125f is formed using the same materials as the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B, it is preferable because the above etching process can be performed collectively.

[0367] In the first etching process, the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B are not completely removed, and the etching process is stopped in a state where the film thickness is reduced. In this way, by leaving the corresponding sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B on the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B, it is possible to prevent the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B from being damaged in the subsequent process.

[0368] Subsequently, it is preferable to expose the entire substrate and irradiate the insulating layer 127a with visible light or ultraviolet light. The energy density of the exposure is preferably greater than 0 mJ / cm 2 and less than or equal to 800 mJ / cm 2 more preferably greater than 0 mJ / cm 2 and less than or equal to 500 mJ / cm 2 Performing such exposure after development may improve the transparency of the insulating layer 127a. Also, in a subsequent process, the substrate temperature required for the heat treatment to deform the insulating layer 127a into a tapered shape may be reduced.

[0369] Here, as the sacrificial layers 158R, 158G, and 158B, the presence of a barrier insulating layer against oxygen (e.g., an aluminum oxide film or the like) can reduce the diffusion of oxygen into the organic compound layers 103R, 103G, and 103B. When the organic compound layer is irradiated with light (visible light or ultraviolet light), the organic compound contained in the organic compound layer may be excited, and the reaction with oxygen contained in the atmosphere may be promoted. More specifically, when the organic compound layer is irradiated with light (visible light or ultraviolet light) in an atmosphere containing oxygen, oxygen may bind to the organic compound contained in the organic compound layer. By providing the sacrificial layers 158R, 158G, and 158B on the island-shaped organic compound layer, it is possible to reduce the binding of oxygen in the atmosphere to the organic compound contained in the organic compound layer.

[0370] Subsequently, a heat treatment (also referred to as post-baking) is performed. By performing the heat treatment, the insulating layer 127a can be deformed into an insulating layer 127 having a tapered shape on the side surface (FIG. 9(C)). The heat treatment is performed at a temperature lower than the heat resistance temperature of the organic compound layer. The heat treatment can be performed at a substrate temperature of 50°C or higher and 200°C or lower, preferably 60°C or higher and 150°C or lower, more preferably 70°C or higher and 130°C or lower. The heating atmosphere may be an air atmosphere or an inert gas atmosphere. Also, the heating atmosphere may be an atmospheric pressure atmosphere or a reduced pressure atmosphere. In the heat treatment of this step, it is preferable to increase the substrate temperature compared to the heat treatment (pre-baking) after the formation of the insulating film 127f. Thereby, the adhesion between the insulating layer 127 and the inorganic insulating layer 125 can be improved, and the corrosion resistance of the insulating layer 127 can also be improved.

[0371] In the first etching process, by not completely removing the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B, but leaving the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B in a state where their film thicknesses are reduced, it is possible to prevent the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B from being damaged and deteriorated in the heat treatment. Therefore, the reliability of the light-emitting device can be improved.

[0372] Depending on the material of the insulating layer 127 and the temperature, time, and atmosphere of the post-baking, a concave curved surface shape may be formed on the side surface of the insulating layer 127. For example, under the post-baking conditions, the higher the temperature or the longer the time, the more likely the shape of the insulating layer 127 is to change, and a concave curved surface shape may be formed.

[0373] Subsequently, as shown in FIG. 10(A), an etching process is performed using the insulating layer 127 as a mask to remove a part of the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B. Note that a part of the inorganic insulating layer 125 may also be removed. As a result, openings are formed in each of the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B, and the upper surfaces of the organic compound layer 103R, the organic compound layer 103G, the organic compound layer 103B, and the conductive layer 152C are exposed. Hereinafter, the etching process using the insulating layer 127 as a mask may be referred to as the second etching process.

[0374] The end portion of the inorganic insulating layer 125 is covered with the insulating layer 127. In addition, FIG. 10(A) shows an example in which the insulating layer 127 covers a part of the end portion of the sacrificial layer 158G (specifically, the tapered portion formed by the first etching process), and the tapered portion formed by the second etching process is exposed.

[0375] If the first etching process is not performed and the inorganic insulating layer 125 and the mask layer are etched all at once after post-baking, side etching may cause the inorganic insulating layer 125 and the mask layer under the end of the insulating layer 127 to disappear, forming a cavity. Due to this cavity, unevenness may occur on the surface where the common electrode 155 is formed, and the common electrode 155 is likely to have steps. Even if the inorganic insulating layer 125 and the mask layer are side-etched in the first etching process to form a cavity, the insulating layer 127 can fill the cavity by performing post-baking thereafter. Then, in the second etching process, since the mask layer with a smaller thickness is etched, the amount of side etching is small, making it difficult to form a cavity, and even if a cavity is formed, it can be extremely small. Therefore, the surface where the common electrode 155 is formed can be made flatter.

[0376] Note that the insulating layer 127 may cover the entire end of the sacrificial layer 158G. For example, the end of the insulating layer 127 may sag and cover the end of the sacrificial layer 158G. Also, for example, the end of the insulating layer 127 may be in contact with the upper surface of at least one of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B. As described above, when the developed insulating layer 127a is not exposed, the shape of the insulating layer 127 may easily change.

[0377] The second etching process is performed by wet etching. By using the wet etching method, the damage to the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B can be reduced compared to the case of using the dry etching method. Wet etching can be performed using, for example, an alkaline solution such as TMAH.

[0378] On the other hand, when performing the second etching process using a wet etching method, for example, due to the problem of adhesion between the organic compound layer 103 and other layers, if there are gaps at the interfaces between the organic compound layer 103 and the sacrificial layer 158, between the organic compound layer 103 and the inorganic insulating layer 125, and between the organic compound layer 103 and the insulating layer 175, the chemical solution used in the second etching process may penetrate into these gaps and the chemical solution may come into contact with the pixel electrode. Here, when the chemical solution comes into contact with both the conductive layer 151 and the conductive layer 152, the conductive layer with a lower natural potential among the conductive layer 151 and the conductive layer 152 may be corroded by galvanic corrosion. For example, when aluminum is used as the conductive layer 151 and indium tin oxide is used as the conductive layer 152, the conductive layer 152 may be corroded. From the above, the yield of the display device may decrease. Also, the reliability of the display device may decrease.

[0379] As described above, by forming the insulating layer 156 so as to have a region overlapping with the side surface of the conductive layer 151 and forming the insulating layer 156 so as to cover the side surface of the conductive layer 151 and the side surface of the conductive layer 152, it is possible to prevent the step break of the inorganic insulating layer 125. Therefore, for example, in the second etching process, it is possible to prevent the chemical solution from coming into contact with the underlying structure such as the conductive layer 151. Thereby, corrosion of the pixel electrode can be prevented.

[0380] As described above, by providing the insulating layer 127, the inorganic insulating layer 125, the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B, it is possible to suppress the occurrence of connection failures due to the divided portions and the increase in electrical resistance due to the locally thin film thickness portions in the common electrode 155 between the respective light emitting devices. Thereby, the display device according to one aspect of the present invention can improve the display quality.

[0381] After exposing a part of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B, a heat treatment is further performed. By this heat treatment, water contained in each organic compound layer, water adsorbed on the surface of each organic compound layer, etc. can be removed. Further, the shape of the insulating layer 127 may change due to the heat treatment. Specifically, the insulating layer 127 may spread so as to cover at least one of the end portions of the inorganic insulating layer 125, the end portions of the sacrificial layers 158R, 158G, and 158B, and the upper surfaces of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B.

[0382] If the temperature of the heat treatment is too low, water contained in each organic compound layer, water adsorbed on the surface of each organic compound layer, etc. cannot be sufficiently removed. Further, if the temperature of the heat treatment is too high, deterioration of the organic compound layer 103 and excessive change in the shape of the insulating layer 127 may occur. Therefore, the heat treatment is preferably performed at a temperature higher than the temperature at which water desorbs from the organic compound layer 103 and lower than the glass transition temperature of the organic compound contained in the organic compound layer 103, and preferably lower than the glass transition temperature of the organic compound contained on the upper surface of the organic compound layer 103. Specifically, it is preferably performed at a temperature of 80°C or higher and 130°C or lower, more preferably 90°C or higher and 120°C or lower, still more preferably 100°C or higher and 120°C or lower, and even more preferably 100°C or higher and 110°C or lower as the substrate temperature. The heating atmosphere may be an air atmosphere or an inert gas atmosphere. Further, the heating atmosphere may be an atmospheric pressure atmosphere or a reduced pressure atmosphere, but a reduced pressure atmosphere is preferable so that the water desorbed from the organic compound layer 103 does not re-adsorb.

[0383] By the heat treatment, water contained in each organic compound layer, water adsorbed on the surface of each organic compound layer, etc. can be sufficiently removed without causing deterioration of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B and excessive change in the shape of the insulating layer 127. Thereby, a decrease in the characteristics of the light-emitting device can be prevented.

[0384] Subsequently, as shown in FIG. 10(B), a common layer 104 and a common electrode 155 are formed on the organic compound layer 103R, on the organic compound layer 103G, on the organic compound layer 103B, on the conductive layer 152C, and on the insulating layer 127. The common layer 104 and the common electrode 155 can be formed by methods such as a sputtering method or a vacuum evaporation method. The common layer 104 may be formed by an evaporation method and the common electrode 155 may be formed by a sputtering method.

[0385] Subsequently, as shown in FIG. 10(C), a protective layer 131 is formed on the common electrode 155. The protective layer 131 can be formed by methods such as a vacuum evaporation method, a sputtering method, a CVD method, or an ALD method.

[0386] Subsequently, the display device can be manufactured by bonding the substrate 120 onto the protective layer 131 using the resin layer 122. As described above, in the method for manufacturing a display device according to an aspect of the present invention, the insulating layer 156 is provided on the side surfaces of the conductive layer 151 and the conductive layer 152. Thereby, the yield of the display device can be increased and the occurrence of defects can be suppressed.

[0387] As described above, in the method for manufacturing a display device according to an aspect of the present invention, the island-shaped organic compound layer 103R, the island-shaped organic compound layer 103G, and the island-shaped organic compound layer 103B are not formed using a fine metal mask, but are formed by processing after forming a film on one surface. Therefore, the island-shaped layers can be formed with a uniform thickness. Then, a high-definition display device or a display device with a high aperture ratio can be realized. Further, even when the fineness or aperture ratio is high and the distance between adjacent sub-pixels is extremely short, it is possible to suppress the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B from contacting each other in adjacent sub-pixels. Therefore, it is possible to suppress the occurrence of leakage current between sub-pixels. Thereby, crosstalk can be prevented and a display device with extremely high contrast can be realized. Also, a display device having a tandem type light-emitting device manufactured using a lithography method can provide a display device with good characteristics.

[0388] The configuration of this embodiment can be used in appropriate combination with the configurations of other embodiments.

[0389] (Embodiment 4) In this embodiment, a light-emitting device according to one aspect of the present invention will be described with reference to FIGS. 11(A) to 11(G) and FIGS. 12(A) to 12(I).

[0390] [Pixel layout] In this embodiment, mainly, a pixel layout different from that in FIG. 3(A) will be described. There is no particular limitation on the arrangement of sub-pixels, and various methods can be applied. Examples of the arrangement of sub-pixels include a stripe arrangement, an S-stripe arrangement, a matrix arrangement, a delta arrangement, a Bayer arrangement, and a pentile arrangement.

[0391] In this embodiment, the upper surface shape of the sub-pixel shown in the figure corresponds to the upper surface shape of the light-emitting region.

[0392] Examples of the upper surface shape of the sub-pixel include polygons such as triangles, quadrilaterals (including rectangles and squares), pentagons, shapes in which the corners of these polygons are rounded, ellipses, or circles.

[0393] Also, the circuit layout constituting the sub-pixel is not limited to the range of the sub-pixel shown in the figure and may be arranged outside thereof.

[0394] An S-stripe arrangement is applied to the pixel 178 shown in FIG. 11(A). The pixel 178 shown in FIG. 11(A) is composed of three sub-pixels: a sub-pixel 110R, a sub-pixel 110G, and a sub-pixel 110B.

[0395] The pixel 178 shown in FIG. 11(B) has a sub-pixel 110R having a substantially trapezoidal or substantially triangular shape with rounded corners, a sub-pixel 110G having a substantially trapezoidal or substantially triangular shape with rounded corners, and a sub-pixel 110B having an upper surface shape of a substantially square or substantially hexagonal shape with rounded corners. Also, the sub-pixel 110R has a larger light-emitting area than the sub-pixel 110G. Thus, the shape and size of each sub-pixel can be determined independently. For example, the size of a sub-pixel having a highly reliable light-emitting device can be made smaller.

[0396] In the pixels 124a and 124b shown in FIG. 11(C), a pentile arrangement is applied. FIG. 11(C) shows an example in which pixels 124a having sub-pixels 110R and sub-pixels 110G and pixels 124b having sub-pixels 110G and sub-pixels 110B are alternately arranged.

[0397] In the pixels 124a and 124b shown in FIGS. 11(D) to 11(F), a delta arrangement is applied. The pixel 124a has two sub-pixels (sub-pixel 110R and sub-pixel 110G) in the upper row (the first row) and one sub-pixel (sub-pixel 110B) in the lower row (the second row). The pixel 124b has one sub-pixel (sub-pixel 110B) in the upper row (the first row) and two sub-pixels (sub-pixel 110R and sub-pixel 110G) in the lower row (the second row).

[0398] FIG. 11(D) is an example in which each sub-pixel has an upper surface shape of a substantially square shape with rounded corners, FIG. 11(E) is an example in which each sub-pixel has a circular upper surface shape, and FIG. 11(F) is an example in which each sub-pixel has an upper surface shape of a substantially hexagonal shape with rounded corners.

[0399] In FIG. 11(F), each sub-pixel is arranged inside a densely arranged hexagonal region. Each sub-pixel is arranged so as to be surrounded by six sub-pixels when focusing on one of the sub-pixels. Also, the sub-pixels presenting the same color light are provided so as not to be adjacent to each other. For example, when focusing on the sub-pixel 110R, each sub-pixel is provided so that three sub-pixels 110G and three sub-pixels 110B are alternately arranged so as to surround it.

[0400] FIG. 11(G) shows an example in which sub-pixels of each color are arranged in a zigzag pattern. Specifically, in a top view, the positions of the upper sides of two sub-pixels arranged in the row direction (for example, sub-pixel 110R and sub-pixel 110G, or sub-pixel 110G and sub-pixel 110B) are shifted.

[0401] In each pixel shown in FIGS. 11(A) to 11(G), for example, it is preferable that sub-pixel 110R is a sub-pixel R that exhibits red light, sub-pixel 110G is a sub-pixel G that exhibits green light, and sub-pixel 110B is a sub-pixel B that exhibits blue light. Note that the configuration of the sub-pixels is not limited to this, and the color exhibited by the sub-pixels and their arrangement order can be determined as appropriate. For example, sub-pixel 110G may be a sub-pixel R that exhibits red light, and sub-pixel 110R may be a sub-pixel G that exhibits green light.

[0402] In the photolithography method, as the pattern to be processed becomes finer, the influence of light diffraction cannot be ignored, so the fidelity is impaired when transferring the pattern of the photomask by exposure, and it becomes difficult to process the resist mask into a desired shape. Therefore, even if the pattern of the photomask is rectangular, a pattern with rounded corners is likely to be formed. Accordingly, the upper surface shape of the sub-pixel may be a shape with rounded corners of a polygon, an elliptical shape, a circular shape, or the like.

[0403] Furthermore, in the method for manufacturing a light-emitting device according to one aspect of the present invention, an organic compound layer is processed into an island shape using a resist mask. The resist film formed on the organic compound layer needs to be cured at a temperature lower than the heat-resistant temperature of the organic compound layer. Therefore, depending on the heat-resistant temperature of the material of the organic compound layer and the curing temperature of the resist material, the curing of the resist film may be insufficient. A resist film with insufficient curing may take a shape deviated from the desired shape during processing. As a result, the upper surface shape of the organic compound layer may be a shape with rounded corners of a polygon, an elliptical shape, a circular shape, or the like. For example, when trying to form a resist mask with a square upper surface shape, a resist mask with a circular upper surface shape may be formed, and the upper surface shape of the organic compound layer may become circular.

[0404] In addition, in order to make the upper surface shape of the organic compound layer a desired shape, a technique (OPC (Optical Proximity Correction) technique) may be used to correct the mask pattern in advance so that the design pattern and the transfer pattern match. Specifically, in the OPC technique, for example, a correction pattern is added to the graphic corner part on the mask pattern.

[0405] As shown in FIGS. 12(A) to 12(I), the pixel can be configured to have four types of sub-pixels.

[0406] In the pixel 178 shown in FIGS. 12(A) to 12(C), a stripe arrangement is applied.

[0407] FIG. 12(A) is an example in which each sub-pixel has a rectangular upper surface shape, FIG. 12(B) is an example in which each sub-pixel has an upper surface shape formed by connecting two semi-circles and a rectangle, and FIG. 12(C) is an example in which each sub-pixel has an elliptical upper surface shape.

[0408] In the pixel 178 shown in FIGS. 12(D) to 12(F), a matrix arrangement is applied.

[0409] FIG. 12(D) is an example in which each sub-pixel has a square upper surface shape, FIG. 12(E) is an example in which each sub-pixel has an upper surface shape of a substantially square with rounded corners, and FIG. 12(F) is an example in which each sub-pixel has a circular upper surface shape.

[0410] In FIGS. 12(G) and 12(H), an example is shown in which one pixel 178 is composed of two rows and three columns.

[0411] The pixel 178 shown in FIG. 12(G) has three sub-pixels (sub-pixel 110R, sub-pixel 110G, and sub-pixel 110B) in the upper row (the first row) and one sub-pixel (sub-pixel 110W) in the lower row (the second row). In other words, the pixel 178 has sub-pixel 110R in the left column (the first column), sub-pixel 110G in the middle column (the second column), sub-pixel 110B in the right column (the third column), and further has sub-pixel 110W across these three columns.

[0412] The pixel 178 shown in FIG. 12(H) has three sub-pixels (sub-pixel 110R, sub-pixel 110G, and sub-pixel 110B) in the upper row (the first row) and three sub-pixels 110W in the lower row (the second row). In other words, the pixel 178 has sub-pixel 110R and sub-pixel 110W in the left column (the first column), sub-pixel 110G and sub-pixel 110W in the middle column (the second column), and sub-pixel 110B and sub-pixel 110W in the right column (the third column). As shown in FIG. 12(H), by adopting a configuration in which the arrangement of sub-pixels in the upper row and the lower row is made uniform, it becomes possible to efficiently remove, for example, dust that may occur in the manufacturing process. Therefore, a light-emitting device with high display quality can be provided.

[0413] In the pixel 178 shown in FIGS. 12(G) and 12(H), since the layout of sub-pixel 110R, sub-pixel 110G, and sub-pixel 110B is a stripe arrangement, the display quality can be improved.

[0414] FIG. 12(I) shows an example in which one pixel 178 is composed of three rows and two columns.

[0415] The pixel 178 shown in FIG. 12(I) has sub-pixel 110R in the upper row (the first row), sub-pixel 110G in the middle row (the second row), has sub-pixel 110B from the first row to the second row, and has one sub-pixel (sub-pixel 110W) in the lower row (the third row). In other words, the pixel 178 has sub-pixel 110R and sub-pixel 110G in the left column (the first column), has sub-pixel 110B in the right column (the second column), and further has sub-pixel 110W across these two columns.

[0416] In pixel 178 shown in FIG. 12(I), since the layout of sub-pixels 110R, 110G, and 110B is a so-called S stripe arrangement, the display quality can be improved.

[0417] The pixel 178 shown in FIGS. 12(A) to 12(I) is composed of four sub-pixels: sub-pixel 110R, sub-pixel 110G, sub-pixel 110B, and sub-pixel 110W. For example, sub-pixel 110R can be a sub-pixel that emits red light, sub-pixel 110G can be a sub-pixel that emits green light, sub-pixel 110B can be a sub-pixel that emits blue light, and sub-pixel 110W can be a sub-pixel that emits white light. Note that at least one of sub-pixel 110R, sub-pixel 110G, sub-pixel 110B, and sub-pixel 110W may be a sub-pixel that emits cyan light, a sub-pixel that emits magenta light, a sub-pixel that emits yellow light, or a sub-pixel that emits near-infrared light.

[0418] As described above, for a pixel configured of sub-pixels having a light-emitting device, various layouts can be applied to the light-emitting device according to one aspect of the present invention.

[0419] This embodiment can be appropriately combined with other embodiments or examples. Also, in this specification, when a plurality of configuration examples are shown in one embodiment, the configuration examples can be appropriately combined.

[0420] (Embodiment 5) In this embodiment, a display device according to one aspect of the present invention will be described.

[0421] The display device of this embodiment can be a high-definition display device. Therefore, the display device of this embodiment can be used, for example, in a display unit of an information terminal device (wearable device) such as a wristwatch type and a bracelet type, a VR device such as a head-mounted display (HMD), and a display unit of a wearable device that can be worn on the head such as a glasses-type AR device.

[0422] In addition, the display device of the present embodiment can be a high-resolution display device or a large-sized display device. Therefore, the display device of the present embodiment can be used, for example, in relatively large-screen electronic devices such as television devices, desktop or notebook personal computers, monitors for computers, digital signage, and large game machines such as pachinko machines, as well as in the display units of digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, portable information terminals, and audio playback devices.

[0423] [Display module] FIG. 13(A) shows a perspective view of the display module 280. The display module 280 includes a display device 100A and an FPC 290. Note that the display device included in the display module 280 is not limited to the display device 100A, and may be any one of the display devices 100B to 100E described later.

[0424] The display module 280 includes a substrate 291 and a substrate 292. The display module 280 includes a display unit 281. The display unit 281 is an area for displaying an image in the display module 280, and is an area where light from each pixel provided in a pixel unit 284 described later can be visually recognized.

[0425] FIG. 13(B) shows a perspective view schematically showing the configuration on the substrate 291 side. On the substrate 291, a circuit unit 282, a pixel circuit unit 283 on the circuit unit 282, and a pixel unit 284 on the pixel circuit unit 283 are laminated. In addition, a terminal unit 285 for connecting to the FPC 290 is provided in a portion that does not overlap with the pixel unit 284 on the substrate 291. The terminal unit 285 and the circuit unit 282 are electrically connected by a wiring unit 286 formed of a plurality of wirings.

[0426] The pixel unit 284 includes a plurality of pixels 284a arranged periodically. An enlarged view of one pixel 284a is shown on the right side of FIG. 13(B). Various configurations described in the previous embodiment can be applied to the pixel 284a.

[0427] The pixel circuit section 283 has a plurality of pixel circuits 283a arranged periodically.

[0428] One pixel circuit 283a is a circuit that controls the driving of a plurality of elements included in one pixel 284a.

[0429] The circuit section 282 has a circuit that drives each pixel circuit 283a of the pixel circuit section 283. For example, it preferably has one or both of a gate line driving circuit and a source line driving circuit. In addition, it may have at least one of an arithmetic circuit, a memory circuit, a power supply circuit, and the like.

[0430] The FPC 290 functions as a wiring for supplying a video signal, a power supply potential, or the like from the outside to the circuit section 282. An IC may be mounted on the FPC 290.

[0431] Since the display module 280 can be configured such that one or both of the pixel circuit section 283 and the circuit section 282 are laminated below the pixel section 284, the aperture ratio (effective display area ratio) of the display section 281 can be made extremely high.

[0432] Such a display module 280 is extremely high-definition, and thus can be suitably used for VR devices such as HMDs or glasses-type AR devices. For example, even in the case of a configuration in which the display section of the display module 280 is viewed through a lens, since the display module 280 has an extremely high-definition display section 281, pixels cannot be seen even when the display section is enlarged by the lens, and a display with a high sense of immersion can be performed. In addition, the display module 280 is not limited thereto, and can be suitably used for electronic devices having a relatively small display section.

[0433] [Display device 100A] The display device 100A shown in FIG. 14(A) has a substrate 301, a light-emitting device 130R, a light-emitting device 130G, a light-emitting device 130B, a capacitor 240, and a transistor 310.

[0434] The substrate 301 corresponds to the substrate 291 in FIGS. 13(A) and 13(B). The transistor 310 is a transistor having a channel formation region in the substrate 301. As the substrate 301, for example, a semiconductor substrate such as a single crystal silicon substrate can be used. The transistor 310 has a part of the substrate 301, a conductive layer 311, a low resistance region 312, an insulating layer 313, and an insulating layer 314. The conductive layer 311 functions as a gate electrode. The insulating layer 313 is located between the substrate 301 and the conductive layer 311 and functions as a gate insulating layer. The low resistance region 312 is a region in which the substrate 301 is doped with impurities and functions as a source or a drain. The insulating layer 314 is provided to cover the side surface of the conductive layer 311.

[0435] Also, an element isolation layer 315 is provided between two adjacent transistors 310 so as to be embedded in the substrate 301.

[0436] Also, an insulating layer 261 is provided to cover the transistor 310, and a capacitor 240 is provided on the insulating layer 261.

[0437] The capacitor 240 has a conductive layer 241, a conductive layer 245, and an insulating layer 243 located between them. The conductive layer 241 functions as one electrode of the capacitor 240, the conductive layer 245 functions as the other electrode of the capacitor 240, and the insulating layer 243 functions as a dielectric of the capacitor 240.

[0438] The conductive layer 241 is provided on the insulating layer 261 and is embedded in the insulating layer 254. The conductive layer 241 is electrically connected to one of the source or drain of the transistor 310 by a plug 271 embedded in the insulating layer 261. The insulating layer 243 is provided to cover the conductive layer 241. The conductive layer 245 is provided in a region overlapping the conductive layer 241 via the insulating layer 243.

[0439] Covering a capacity of 240, an insulating layer 255 is provided, an insulating layer 174 is provided on the insulating layer 255, and an insulating layer 175 is provided on the insulating layer 174. On the insulating layer 175, a light-emitting device 130R, a light-emitting device 130G, and a light-emitting device 130B are provided. An insulator is provided in a region between adjacent light-emitting devices.

[0440] An insulating layer 156R is provided so as to have a region overlapping with a side surface of the conductive layer 151R, an insulating layer 156G is provided so as to have a region overlapping with a side surface of the conductive layer 151G, and an insulating layer 156B is provided so as to have a region overlapping with a side surface of the conductive layer 151B. Also, a conductive layer 152R is provided so as to cover the conductive layer 151R and the insulating layer 156R, a conductive layer 152G is provided so as to cover the conductive layer 151G and the insulating layer 156G, and a conductive layer 152B is provided so as to cover the conductive layer 151B and the insulating layer 156B. A sacrificial layer 158R is located on the organic compound layer 103R, a sacrificial layer 158G is located on the organic compound layer 103G, and a sacrificial layer 158B is located on the organic compound layer 103B.

[0441] The conductive layer 151R, the conductive layer 151G, and the conductive layer 151B are electrically connected to one of the source or drain of the transistor 310 by a plug 256 embedded in the insulating layer 243, the insulating layer 255, the insulating layer 174, and the insulating layer 175, a conductive layer 241 embedded in the insulating layer 254, and a plug 271 embedded in the insulating layer 261. Various conductive materials can be used for the plug.

[0442] Also, a protective layer 131 is provided on the light-emitting device 130R, the light-emitting device 130G, and the light-emitting device 130B. On the protective layer 131, the substrate 120 is bonded by a resin layer 122. Details of the components from the light-emitting device 130 to the substrate 120 can be referred to in Embodiment 4. The substrate 120 corresponds to the substrate 292 in FIG. 13(A).

[0443] FIG. 14(B) is a modified example of the display device 100A shown in FIG. 14(A). The display device shown in FIG. 14(B) has a colored layer 132R, a colored layer 132G, and a colored layer 132B, and the light-emitting device 130 has a region overlapping with one of the colored layer 132R, the colored layer 132G, and the colored layer 132B. In the display device shown in FIG. 14(B), the light-emitting device 130 can emit, for example, white light. Also, for example, the colored layer 132R can transmit red light, the colored layer 132G can transmit green light, and the colored layer 132B can transmit blue light.

[0444] [Display device 100B] FIG. 15 shows a perspective view of the display device 100B, and FIG. 16 shows a cross-sectional view of the display device 100C.

[0445] The display device 100B has a configuration in which a substrate 352 and a substrate 351 are bonded together. In FIG. 15, the substrate 352 is shown by a broken line.

[0446] The display device 100B includes a pixel portion 177, a connection portion 140, a circuit 356, a wiring 355, etc. FIG. 15 shows an example in which an IC 354 and an FPC 353 are mounted on the display device 100B. Therefore, the configuration shown in FIG. 15 can also be referred to as a display module having the display device 100B, an IC (integrated circuit), and an FPC. Here, a display device in which a connector such as an FPC is attached to the substrate of the display device, or a display device in which an IC is mounted on the substrate is called a display module.

[0447] The connection portion 140 is provided outside the pixel portion 177. The connection portion 140 may be singular or plural. The connection portion 140 electrically connects the common electrode of the light-emitting device and the conductive layer, and can supply a potential to the common electrode.

[0448] As the circuit 356, for example, a scanning line driving circuit can be used.

[0449] The wiring 355 has a function of supplying signals and power to the pixel portion 177 and the circuit 356. The signals and power are input to the wiring 355 from the outside via the FPC 353 or from the IC 354.

[0450] FIG. 15 shows an example in which the IC 354 is provided on the substrate 351 by a COG (Chip On Glass) method, a COF (Chip on Film) method, or the like. As the IC 354, for example, an IC having a scanning line driving circuit, a signal line driving circuit, or the like can be applied. Note that the display device 100B and the display module may be configured not to include an IC. Further, the IC may be mounted on the FPC by, for example, a COF method.

[0451] FIG. 16 shows an example of a cross section when a part of the region including the FPC 353, a part of the circuit 356, a part of the pixel portion 177, a part of the connection portion 140, and a part of the region including the end portion of the display device 100B in FIG. 15 are each cut.

[0452] [Display device 100C] The display device 100C shown in FIG. 16 includes a transistor 201, a transistor 205, a light-emitting device 130R that emits red light, a light-emitting device 130G that emits green light, and a light-emitting device 130B that emits blue light, etc. between the substrate 351 and the substrate 352.

[0453] Details of the light-emitting device 130R, the light-emitting device 130G, and the light-emitting device 130B can be referred to in Embodiment 4.

[0454] The light-emitting device 130R includes a conductive layer 224R, a conductive layer 151R on the conductive layer 224R, and a conductive layer 152R on the conductive layer 151R. The light-emitting device 130G includes a conductive layer 224G, a conductive layer 151G on the conductive layer 224G, and a conductive layer 152G on the conductive layer 151G. The light-emitting device 130B includes a conductive layer 224B, a conductive layer 151B on the conductive layer 224B, and a conductive layer 152B on the conductive layer 151B.

[0455] The conductive layer 224R is connected to the conductive layer 222b of the transistor 205 through an opening provided in the insulating layer 214. The end of the conductive layer 151R is located outside the end of the conductive layer 224R. The insulating layer 156R is provided so as to have a region in contact with the side surface of the conductive layer 151R, and the conductive layer 152R is provided so as to cover the conductive layer 151R and the insulating layer 156R.

[0456] For the conductive layer 224G, the conductive layer 151G, the conductive layer 152G, the insulating layer 156G in the light-emitting device 130G, and the conductive layer 224B, the conductive layer 151B, the conductive layer 152B, the insulating layer 156B in the light-emitting device 130B, since they are the same as the conductive layer 224R, the conductive layer 151R, the conductive layer 152R, the insulating layer 156R in the light-emitting device 130R, detailed descriptions thereof are omitted.

[0457] Recesses are formed in the conductive layer 224R, the conductive layer 224G, and the conductive layer 224B so as to cover the openings provided in the insulating layer 214. The layer 128 is embedded in the recesses.

[0458] The layer 128 has a function of filling and planarizing the recesses of the conductive layer 224R, the conductive layer 224G, and the conductive layer 224B. On the conductive layer 224R, the conductive layer 224G, the conductive layer 224B, and the layer 128, the conductive layer 151R, the conductive layer 151G, and the conductive layer 151B that are electrically connected to the conductive layer 224R, the conductive layer 224G, and the conductive layer 224B are provided. Therefore, the region overlapping the recesses of the conductive layer 224R, the conductive layer 224G, and the conductive layer 224B can also be used as a light-emitting region, and the aperture ratio of the pixel can be increased.

[0459] The layer 128 may be an insulating layer or a conductive layer. Various inorganic insulating materials, organic insulating materials, and conductive materials can be appropriately used for the layer 128. In particular, the layer 128 is preferably formed using an insulating material, and particularly preferably formed using an organic insulating material. For example, the organic insulating material that can be used for the aforementioned insulating layer 127 can be applied to the layer 128.

[0460] A protective layer 131 is provided on the light-emitting device 130R, the light-emitting device 130G, and the light-emitting device 130B. The protective layer 131 and the substrate 352 are adhered via an adhesive layer 142. A light-shielding layer 157 is provided on the substrate 352. For encapsulating the light-emitting device 130, a solid encapsulation structure, a hollow encapsulation structure, or the like can be applied. In FIG. 16, the space between the substrate 352 and the substrate 351 is filled with the adhesive layer 142, and a solid encapsulation structure is applied. Alternatively, the space may be filled with an inert gas (such as nitrogen or argon), and a hollow encapsulation structure may be applied. At this time, the adhesive layer 142 may be provided so as not to overlap with the light-emitting device. Further, the space may be filled with a resin different from the adhesivelayer 142 provided in a frame shape.

[0461] In FIG. 16, an example is shown in which the connection part 140 has a conductive layer 224C obtained by processing the same conductive film as the conductive layer 224R, the conductive layer 224G, and the conductive layer 224B, a conductive layer 151C obtained by processing the same conductive film as the conductive layer 151R, the conductive layer 151G, and the conductive layer 151B, and a conductive layer 152C obtained by processing the same conductive film as the conductive layer 152R, the conductive layer 152G, and the conductive layer 152B. Further, in FIG. 16, an example is shown in which an insulating layer 156C is provided so as to have a region overlapping with the side surface of the conductive layer 151C.

[0462] The display device 100C is of a top emission type. The light emitted from the light-emitting device is emitted toward the substrate 352 side. It is preferable to use a material having high transmittance for visible light for the substrate 352. The pixel electrode contains a material that reflects visible light, and the counter electrode (common electrode 155) contains a material that transmits visible light.

[0463] On the substrate 351, an insulating layer 211, an insulating layer 213, an insulating layer 215, and an insulating layer 214 are provided in this order. A part of the insulating layer 211 functions as a gate insulating layer of each transistor. A part of the insulating layer 213 functions as a gate insulating layer of each transistor. The insulating layer 215 is provided to cover the transistor. The insulating layer 214 is provided to cover the transistor and has a function as a planarization layer. Note that the number of gate insulating layers and the number of insulating layers covering the transistor are not limited, and each may be a single layer or two or more layers.

[0464] As the insulating layer 211, the insulating layer 213, and the insulating layer 215, it is preferable to use an inorganic insulating film respectively.

[0465] An organic insulating layer is suitable for the insulating layer 214 that functions as a planarization layer.

[0466] The transistor 201 and the transistor 205 include a conductive layer 221 that functions as a gate, an insulating layer 211 that functions as a gate insulating layer, conductive layers 222a and 222b that function as a source and a drain, a semiconductor layer 231, an insulating layer 213 that functions as a gate insulating layer, and a conductive layer 223 that functions as a gate.

[0467] A connection portion 204 is provided in a region of the substrate 351 where the substrate 352 does not overlap. In the connection portion 204, a source electrode or a drain electrode of the transistor 201 is electrically connected to the FPC 353 via the conductive layer 166 and the connection layer 242. The conductive layer 166 is an example of a laminated structure of a conductive film obtained by processing the same conductive film as the conductive layer 224R, the conductive layer 224G, and the conductive layer 224B, a conductive film obtained by processing the same conductive film as the conductive layer 151R, the conductive layer 151G, and the conductive layer 151B, and a conductive film obtained by processing the same conductive film as the conductive layer 152R, the conductive layer 152G, and the conductive layer 152B. On the upper surface of the connection portion 204, the conductive layer 166 is exposed. Thereby, the connection portion 204 and the FPC 353 can be electrically connected via the connection layer 242.

[0468] It is preferable to provide a light-shielding layer 157 on the surface of the substrate 352 on the side of the substrate 351. The light-shielding layer 157 can be provided between adjacent light-emitting devices, at the connection portion 140, and in the circuit 356 and the like. In addition, various optical members can be arranged outside the substrate 352.

[0469] As the substrate 351 and the substrate 352, materials that can be used for the substrate 120 can be applied respectively.

[0470] As the adhesive layer 142, materials that can be used for the resin layer 122 can be applied.

[0471] As the connection layer 242, an anisotropic conductive film (ACF: Anisotropic Conductive Film), an anisotropic conductive paste (ACP: Anisotropic Conductive Paste), or the like can be used.

[0472] [Display device 100D] The display device 100D shown in FIG. 17 is mainly different from the display device 100C shown in FIG. 16 in that it is a bottom emission type display device.

[0473] The light emitted by the light-emitting device is emitted toward the substrate 351 side. It is preferable to use a material with high transmittance for visible light for the substrate 351. On the other hand, the light transmittance of the material used for the substrate 352 does not matter.

[0474] It is preferable to form a light-shielding layer 317 between the substrate 351 and the transistor 201 and between the substrate 351 and the transistor 205. In FIG. 17, an example is shown in which a light-shielding layer 317 is provided on the substrate 351, an insulating layer 153 is provided on the light-shielding layer 317, and transistors 201, 205, etc. are provided on the insulating layer 153.

[0475] The light-emitting device 130R has a conductive layer 112R, a conductive layer 126R on the conductive layer 112R, and a conductive layer 129R on the conductive layer 126R.

[0476] The light-emitting device 130B includes a conductive layer 112B, a conductive layer 126B on the conductive layer 112B, and a conductive layer 129B on the conductive layer 126B.

[0477] For the conductive layers 112R, 112B, 126R, 126B, 129R, and 129B, materials with high transparency to visible light are used respectively. It is preferable to use a material that reflects visible light for the second electrode 102.

[0478] Although the light-emitting device 130G is not shown in FIG. 17, the light-emitting device 130G is also provided.

[0479] Also, in FIG. 17 and the like, an example is shown in which the upper surface of the layer 128 has a flat portion, but the shape of the layer 128 is not particularly limited.

[0480] [Display device 100D2] The display device 100D2 shown in FIG. 18(A) is an example of a bottom emission type display device different from the display device 100D shown in FIG. 17. The display device 100D2 is different from the display device 100D in that it has an organic resin layer 180. In the figure, the reference numerals of the same components as those in FIG. 17 may be omitted, and the details thereof may be referred to the description of FIG. 17.

[0481] Also, FIG. 18(B) shows the top layout of the pixel 178 (pixel 178a and pixel 178b) having the sub-pixels 110 (sub-pixel 110R, sub-pixel 110G, sub-pixel 110B, sub-pixel 110W), and FIG. 18(C) shows a top view of the organic resin layer 180 in the region where the sub-pixels 110R and 110G included in the pixel 178 are formed. Note that the width between the light-shielding layers 317 is the width 110Rw in the light-emitting region of the sub-pixel 110R.

[0482] As shown in FIG. 18(A), the organic resin layer 180 is provided on the insulating layer 214. As shown in the region surrounded by the dashed-dotted line in FIG. 18(A) and FIG. 18(C), the organic resin layer 180 has concave portions 181 (concave portion 181a, concave portion 181b) having a curved surface in at least the region where sub-pixels are formed. Note that the concave portion 181 may be provided outside the light-emitting region like the concave portion 181c. By providing the concave portion 181c, light generated in the region overlapping with the light-shielding layer 317 or light that has traveled to the region overlapping with the light-shielding layer 317 is refracted and can be extracted from the light-emitting region, so that the light-emitting efficiency can be improved.

[0483] A plurality of the concave portions 181 may be formed in a matrix. The concave portion 181a and the concave portion 181b may be provided in contact with each other or may have a flat surface therebetween.

[0484] In FIG. 18, the upper surface shape of the concave portion is shown as a hexagon (FIG. 18(C)) and the cross-sectional shape is shown as a semi-circle (FIG. 18(A)), but other shapes may be used as necessary. For example, the upper surface shape of the concave portion may be a polygon such as a triangle, a quadrilateral (including a rectangle and a square), a pentagon, or the like, a shape in which the corners of these polygons are rounded, an ellipse, or a circle.

[0485] As the organic resin layer 180, an insulating layer having an organic material can be used. For example, as the organic resin layer 180, an acrylic resin, a polyimide resin, an epoxy resin, an imide resin, a polyamide resin, a polyimide amide resin, a silicone resin, a siloxane resin, a benzocyclobutene-based resin, a phenol resin, and precursors of these resins can be applied. Further, as the organic resin layer 180, an organic material such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinyl pyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin may be used.

[0486] In addition, a photosensitive resin can be used as the organic resin layer 180. A photoresist may be used as the photosensitive resin. As the photosensitive resin, a positive-type material or a negative-type material can be used.

[0487] The organic resin layer 180 may contain a material that absorbs visible light. For example, the organic resin layer 180 itself may be composed of a material that absorbs visible light, or the organic resin layer 180 may contain a pigment that absorbs visible light. As the organic resin layer 180, for example, a resin that can be used as a color filter that transmits red, blue, or green light and absorbs other light, or a resin that contains carbon black as a pigment and functions as a black matrix can be used.

[0488] In addition, a first electrode 101 (first electrodes 101R and 101W) is provided on the organic resin layer 180, and an organic compound layer 103 is provided on the first electrode 101. The ends of the first electrode 101 and the organic compound layer 103 may be covered with an insulating layer 127.

[0489] In addition, the first electrode 101 formed on the organic resin layer 180 has a recess along the recess of the organic resin layer 180. Further, the organic compound layer 103 formed on the first electrode 101 has a recess along the recess of the first electrode 101. Further, the common layer 104 formed on the organic compound layer 103 has a recess along the recess of the organic compound layer 103. Further, the second electrode 102 formed on the common layer 104 has a recess along the recess of the common layer 104. That is, the recesses of the organic resin layer 180, the first electrode 101, the organic compound layer 103, the common layer 104, and the second electrode 102 have a structure that overlaps each other.

[0490] In addition, a common layer 104 is provided on the organic compound layer 103 and the insulating layer 127, and a second electrode 102 is provided on the common layer 104. A protective layer 131 is provided on the second electrode 102, and the structure is bonded to the substrate 352 via an adhesive layer 142.

[0491] Note that, in FIG. 18(A), the light-emitting devices 130G and 130B are not illustrated, but the light-emitting devices 130G and 130B are also provided.

[0492] The light-emitting device according to one embodiment of the present invention having the organic resin layer 180 as described above contains the organic compound represented by the general formula (G1) in the organic compound layer 103 as described in Embodiment 1. Therefore, due to the effect of the organic resin layer 180 and the inseparable effect of the organic semiconductor device using the organic compound of the present application, an organic semiconductor device with high luminous efficiency can be provided, so that an organic semiconductor device with good reliability, low driving voltage, and low power consumption can be provided.

[0493] [Display device 100E] The display device 100E shown in FIG. 19 is a modified example of the display device 100C shown in FIG. 16, and is mainly different from the display device 100C in that it has a colored layer 132R, a colored layer 132G, and a colored layer 132B.

[0494] In the display device 100E, the light-emitting device 130 has a region overlapping with one of the colored layer 132R, the colored layer 132G, and the colored layer 132B. The colored layer 132R, the colored layer 132G, and the colored layer 132B can be provided on the surface of the substrate 351 on the side of the substrate 352. The ends of the colored layer 132R, the ends of the colored layer 132G, and the ends of the colored layer 132B can overlap with the light-shielding layer 157.

[0495] In the display device 100E, the light-emitting device 130 can emit, for example, white light. Also, for example, the colored layer 132R can transmit red light, the colored layer 132G can transmit green light, and the colored layer 132B can transmit blue light. Note that the display device 100E may be configured to provide the colored layer 132R, the colored layer 132G, and the colored layer 132B between the protective layer 131 and the adhesive layer 142.

[0496] [Display device 100E2] The display device 100E2 shown in FIG. 20(A) is a modified example of the display device 100E shown in FIG. 19, and has microlenses 182 on the coloring layer 132R, the coloring layer 132G, and the coloring layer 132B. In the figure, the reference numerals of the same components as those in FIG. 19 may be omitted, and the details thereof may be referred to the description of FIG. 19.

[0497] Further, FIG. 20(B) shows the top layout of the pixels 178 (pixels 178a and 178b) having the sub-pixels 110 (sub-pixel 110R, sub-pixel 110G, sub-pixel 110B), and FIG. 20(C) shows a top view of the microlenses 182 in the region where the sub-pixels 110R and 110G included in the pixel 178 are formed. Note that the region where the common electrode 155 is in contact with the organic compound layer 103 is the width 110Gw in the light-emitting region of the sub-pixel 110G.

[0498] In the display device 100E2 shown in FIG. 20(A), a planarization film 143 is provided on the protective layer 131, and the coloring layer 132R, the coloring layer 132G, and the coloring layer 132B are provided on the planarization film 143. A planarization film 144 is provided so as to cover the coloring layer 132R, the coloring layer 132G, and the coloring layer 132B. The microlenses 182 are provided on the planarization film 144.

[0499] Note that, as shown in FIG. 20(C), the microlenses 182 may be provided for each sub-pixel in the region where the sub-pixels are formed.

[0500] Note that, in FIG. 20(C), the top shape of the microlens 182 is shown as a hexagon, but it may be other shapes as required. For example, the top shape of the microlens 182 may be a polygon such as a triangle, a quadrilateral (including a rectangle and a square), a pentagon, a shape in which the corners of these polygons are rounded, an ellipse, or a circle.

[0501] The microlenses 182 can be formed using the same material as the organic resin layer 180.

[0502] The light-emitting device of one embodiment of the present invention having the microlens 182 as described above contains the organic compound represented by the general formula (G1) in the organic compound layer 103 as described in Embodiment 1. Therefore, due to the effect of the microlens 182 and the inseparable effect of the organic semiconductor device using the organic compound of the present application, an organic semiconductor device with high luminous efficiency can be provided, so that an organic semiconductor device that is reliable, has a low driving voltage, and low power consumption and is optimal for mobile displays can be provided.

[0503] This embodiment can be appropriately combined with other embodiments or examples. Also, in this specification, when a plurality of configuration examples are shown in one embodiment, the configuration examples can be appropriately combined.

[0504] (Embodiment 6) In this embodiment, an electronic device of one embodiment of the present invention will be described.

[0505] The electronic device of this embodiment has a light-emitting device of one embodiment of the present invention in the display unit. The light-emitting device of one embodiment of the present invention is highly reliable and is also easily miniaturized and has high resolution. Therefore, it can be used in the display units of various electronic devices.

[0506] Examples of the electronic device include, for example, television devices, desktop or notebook personal computers, monitors for computers, digital signage, large game machines such as pachinko machines, and other electronic devices with relatively large screens, as well as digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, portable information terminals, audio playback devices, and the like.

[0507] In particular, the light-emitting device according to one aspect of the present invention can enhance the definition and thus can be suitably used in an electronic device having a relatively small display unit. Examples of such electronic devices include wristwatch-type and bracelet-type information terminals (wearable devices), as well as VR devices such as head-mounted displays, glasses-type AR devices, and MR (Mixed Reality) devices, etc., wearable devices that can be worn on the head such as these.

[0508] The light-emitting device according to one aspect of the present invention preferably has an extremely high resolution such as HD (number of pixels 1280×720), FHD (number of pixels 1920×1080), WQHD (number of pixels 2560×1440), WQXGA (number of pixels 2560×1600), 4K (number of pixels 3840×2160), 8K (number of pixels 7680×4320). In particular, it is preferably 4K, 8K, or a resolution higher than that. Also, the pixel density (definition) in the light-emitting device according to one aspect of the present invention is preferably 100 ppi or more, preferably 300 ppi or more, more preferably 500 ppi or more, more preferably 1000 ppi or more, more preferably 2000 ppi or more, more preferably 3000 ppi or more, more preferably 5000 ppi or more, and even more preferably 7000 ppi or more. By using a light-emitting device having one or both of such high resolution and high definition, it becomes possible to further enhance the sense of presence and the sense of depth, etc. Also, there is no particular limitation on the screen ratio (aspect ratio) of the light-emitting device according to one aspect of the present invention. For example, the light-emitting device can support various screen ratios such as 1:1 (square), 4:3, 16:9, and 16:10.

[0509] The electronic device of the present embodiment may have a sensor (including a function of measuring force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared rays).

[0510] The electronic device of the present embodiment can have various functions. For example, it can have functions such as displaying various information (still images, videos, text images, etc.) on a display unit, a touch panel function, a function of displaying a calendar, date, or time, etc., a function of executing various software (programs), a wireless communication function, a function of reading programs or data recorded on a recording medium, etc.

[0511] An example of a wearable device that can be worn on the head will be described with reference to FIGS. 21(A) to 21(D). These wearable devices have at least one of a function of displaying AR content, a function of displaying VR content, a function of displaying SR (Substitutional Reality) content, and a function of displaying MR content. By having a function of displaying at least one content such as AR, VR, SR, and MR, it becomes possible to enhance the immersion feeling of the user.

[0512] The electronic device 700A shown in FIG. 21(A) and the electronic device 700B shown in FIG. 21(B) each have a pair of display panels 751, a pair of housings 721, a communication unit (not shown), a pair of mounting portions 723, a control unit (not shown), an imaging unit (not shown), a pair of optical members 753, a frame 757, and a pair of nose pads 758.

[0513] The light-emitting device of one aspect of the present invention can be applied to the display panel 751. Therefore, a highly reliable electronic device can be obtained.

[0514] The electronic device 700A and the electronic device 700B can each project the image displayed on the display panel 751 onto the display area 756 of the optical member 753. Since the optical member 753 has translucency, the user can see the image displayed in the display area superimposed on the transmitted image viewed through the optical member 753. Therefore, the electronic device 700A and the electronic device 700B are each an electronic device capable of AR display.

[0515] The electronic device 700A and the electronic device 700B may be provided with a camera capable of imaging the front as an imaging unit. Further, the electronic device 700A and the electronic device 700B may each be provided with an acceleration sensor such as a gyro sensor to detect the orientation of the user's head and display an image corresponding to the orientation in the display area 756.

[0516] The communication unit has a wireless communication device, and the wireless communication device can supply, for example, a video signal. In addition to or instead of the wireless communication device, a connector to which a cable for supplying a video signal and a power supply potential can be connected may be provided.

[0517] Also, the electronic device 700A and the electronic device 700B are provided with a battery, which can be charged by one or both of wireless and wired methods.

[0518] The housing 721 may be provided with a touch sensor module. The touch sensor module has a function of detecting that the outer surface of the housing 721 is touched. By the touch sensor module, a tap operation or a slide operation of the user can be detected, and various processes can be executed. For example, it is possible to execute processes such as pausing or resuming a video by a tap operation, and it is possible to execute a fast forward or rewind process by a slide operation. Also, by providing a touch sensor module on each of the two housings 721, the range of operations can be widened.

[0519] As the touch sensor module, various touch sensors can be applied. For example, various methods such as a capacitance method, a resistive film method, an infrared method, an electromagnetic induction method, a surface acoustic wave method, or an optical method can be adopted. In particular, it is preferable to apply a capacitance method or an optical method sensor to the touch sensor module.

[0520] When using an optical touch sensor, a photoelectric conversion device (also referred to as a photoelectric conversion element) can be used as a light receiving element. For the active layer of the photoelectric conversion device, one or both of an inorganic semiconductor and an organic semiconductor can be used.

[0521] The electronic device 800A shown in FIG. 21(C) and the electronic device 800B shown in FIG. 21(D) each include a pair of display units 820, a housing 821, a communication unit 822, a pair of mounting units 823, a control unit 824, a pair of imaging units 825, and a pair of lenses 832.

[0522] The light emitting device according to one aspect of the present invention can be applied to the display unit 820. Therefore, a highly reliable electronic device can be obtained.

[0523] The display unit 820 is provided at a position inside the housing 821 where it can be visually recognized through the lens 832. Also, by displaying different images on the pair of display units 820, three-dimensional display using parallax can be performed.

[0524] The electronic device 800A and the electronic device 800B can each be referred to as an electronic device for VR. A user wearing the electronic device 800A or the electronic device 800B can visually recognize the image displayed on the display unit 820 through the lens 832.

[0525] The electronic device 800A and the electronic device 800B preferably each have a mechanism capable of adjusting the left and right positions thereof so that the lens 832 and the display unit 820 are at optimal positions according to the position of the user's eyes. Also, it is preferable to have a mechanism for adjusting focus by changing the distance between the lens 832 and the display unit 820.

[0526] With the mounting part 823, the user can mount the electronic device 800A or the electronic device 800B on the head. Note that, for example, in FIG. 21(C), it is illustrated as having a shape like the temple of glasses (also referred to as a temple or the like), but it is not limited to this. The mounting part 823 only needs to be mountable by the user, and may have, for example, a helmet type or a band type shape.

[0527] The imaging unit 825 has a function of acquiring external information. The data acquired by the imaging unit 825 can be output to the display unit 820. An image sensor can be used for the imaging unit 825. Also, a plurality of cameras may be provided so as to be capable of corresponding to a plurality of viewing angles such as telephoto and wide angle.

[0528] Here, an example having the imaging unit 825 is shown, but a distance measuring sensor (hereinafter, also referred to as a detection unit) capable of measuring the distance to an object may be provided. That is, the imaging unit 825 is one aspect of the detection unit. As the detection unit, for example, an image sensor or a distance image sensor such as a lidar (Light Detection and Ranging) can be used. By using the image obtained by the camera and the image obtained by the distance image sensor, more information can be acquired and a more accurate gesture operation can be enabled.

[0529] The electronic device 800A may have a vibration mechanism that functions as a bone conduction earphone. For example, a configuration having the vibration mechanism can be applied to any one or more of the display unit 820, the housing 821, and the mounting part 823. Thereby, it is not necessary to separately provide an acoustic device such as headphones, earphones, or a speaker, and the user can enjoy video and audio just by wearing the electronic device 800A.

[0530] The electronic device 800A and the electronic device 800B may each have an input terminal. A video signal from a video output device or the like and a cable for supplying power for charging a battery provided in the electronic device can be connected to the input terminal.

[0531] An electronic device according to an aspect of the present invention may have a function of performing wireless communication with an earphone 750. The earphone 750 has a communication unit (not shown) and has a wireless communication function. The earphone 750 can receive information (for example, audio data) from the electronic device by the wireless communication function. For example, the electronic device 700A shown in FIG. 21(A) has a function of transmitting information to the earphone 750 by the wireless communication function. Further, for example, the electronic device 800A shown in FIG. 21(C) has a function of transmitting information to the earphone 750 by the wireless communication function.

[0532] Further, the electronic device may have an earphone unit. The electronic device 700B shown in FIG. 21(B) has an earphone unit 727. For example, the earphone unit 727 and the control unit can be configured to be wired-connected to each other. A part of the wiring connecting the earphone unit 727 and the control unit may be disposed inside the housing 721 or the mounting unit 723.

[0533] Similarly, the electronic device 800B shown in FIG. 21(D) has an earphone unit 827. For example, the earphone unit 827 and the control unit 824 can be configured to be wired-connected to each other. A part of the wiring connecting the earphone unit 827 and the control unit 824 may be disposed inside the housing 821 or the mounting unit 823. Further, the earphone unit 827 and the mounting unit 823 may have magnets. Thereby, the earphone unit 827 can be fixed to the mounting unit 823 by magnetic force, which is preferable because storage is easy.

[0534] Note that the electronic device may have an audio output terminal to which an earphone or a headset can be connected. Further, the electronic device may have one or both of an audio input terminal and an audio input mechanism. As the audio input mechanism, for example, a sound collecting device such as a microphone can be used. By providing the electronic device with an audio input mechanism, a so-called headset function may be given to the electronic device.

[0535] Thus, as the electronic device according to one aspect of the present invention, either a glasses type (such as electronic devices 700A and 700B) or a goggles type (such as electronic devices 800A and 800B) is suitable.

[0536] Also, the electronic device according to one aspect of the present invention can transmit information to earphones, either wired or wirelessly.

[0537] The electronic device 6500 shown in FIG. 22(A) is a portable information terminal that can be used as a smartphone.

[0538] The electronic device 6500 includes a housing 6501, a display unit 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, a light source 6508, etc. The display unit 6502 has a touch panel function.

[0539] The light-emitting device according to one aspect of the present invention can be applied to the display unit 6502. Thus, a highly reliable electronic device can be obtained.

[0540] FIG. 22(B) is a schematic cross-sectional view including the end portion on the microphone 6506 side of the housing 6501.

[0541] A protective member 6510 having translucency is provided on the display surface side of the housing 6501, and a display panel 6511, an optical member 6512, a touch sensor panel 6513, a printed circuit board 6517, a battery 6518, etc. are arranged in the space surrounded by the housing 6501 and the protective member 6510.

[0542] The display panel 6511, the optical member 6512, and the touch sensor panel 6513 are fixed to the protective member 6510 by an adhesive layer (not shown).

[0543] In a region outside the display unit 6502, a part of the display panel 6511 is folded back, and the FPC 6515 is connected to the folded part. The IC 6516 is mounted on the FPC 6515. The FPC 6515 is connected to a terminal provided on the printed circuit board 6517.

[0544] The light-emitting device according to an aspect of the present invention can be applied to the display panel 6511. Therefore, an extremely lightweight electronic device can be realized. Further, since the display panel 6511 is extremely thin, a large-capacity battery 6518 can be mounted while suppressing the thickness of the electronic device. Further, by folding back a part of the display panel 6511 and arranging a connection portion with the FPC 6515 on the back side of the pixel portion, a narrow-bezel electronic device can be realized.

[0545] FIG. 22(C) shows an example of a television device. In the television device 7100, a display unit 7000 is incorporated in a housing 7171. Here, a configuration in which the housing 7171 is supported by a stand 7173 is shown.

[0546] The light-emitting device according to an aspect of the present invention can be applied to the display unit 7000. Therefore, a highly reliable electronic device can be obtained.

[0547] The operation of the television device 7100 shown in FIG. 22(C) can be performed by an operation switch provided in the housing 7171 and a separate remote control operation unit 7151. Alternatively, the display unit 7000 may be provided with a touch sensor, and the television device 7100 may be operated by touching the display unit 7000 with a finger or the like. The remote control operation unit 7151 may have a display unit that displays information output from the remote control operation unit 7151. Channel and volume operations can be performed by operation keys or a touch panel provided in the remote control operation unit 7151, and the video displayed on the display unit 7000 can be operated.

[0548] Note that the television apparatus 7100 is configured to include a receiver, a modem, etc. The receiver can receive general television broadcasts. Also, by connecting to a communication network by wire or wirelessly via the modem, it is possible to perform one-way (from the sender to the receiver) or two-way (between the sender and the receiver, or between receivers, etc.) information communication.

[0549] FIG. 22(D) shows an example of a notebook personal computer. The notebook personal computer 7200 has a housing 7211, a keyboard 7212, a pointing device 7213, an external connection port 7214, etc. A display unit 7000 is incorporated in the housing 7211.

[0550] The light-emitting device according to one aspect of the present invention can be applied to the display unit 7000. Therefore, a highly reliable electronic device can be obtained.

[0551] FIGS. 22(E) and 22(F) show an example of digital signage.

[0552] The digital signage 7300 shown in FIG. 22(E) has a housing 7301, a display unit 7000, a speaker 7303, etc. Further, it can have an LED lamp, operation keys (including a power switch or operation switches), connection terminals, various sensors, a microphone, etc.

[0553] FIG. 22(F) shows a digital signage 7400 attached to a cylindrical pillar 7401. The digital signage 7400 has a display unit 7000 provided along the curved surface of the pillar 7401.

[0554] In FIGS. 22(E) and 22(F), the light-emitting device according to one aspect of the present invention can be applied to the display unit 7000. Therefore, a highly reliable electronic device can be obtained.

[0555] The larger the display unit 7000 is, the more information can be provided at one time. Also, the larger the display unit 7000 is, the more likely it is to catch people's eyes. For example, the advertising effect can be enhanced.

[0556] By applying a touch panel to the display unit 7000, not only can an image or video be displayed on the display unit 7000, but also the user can intuitively operate it, which is preferable. Also, when used for purposes such as providing route information or traffic information, etc., the usability by intuitive operation can be enhanced.

[0557] Also, as shown in FIGS. 22(E) and 22(F), it is preferable that the digital signage 7300 or the digital signage 7400 can be linked by wireless communication with an information terminal 7311 such as a smartphone or an information terminal 7411 held by the user. For example, the information of the advertisement displayed on the display unit 7000 can be displayed on the screen of the information terminal 7311 or the information terminal 7411. Also, by operating the information terminal 7311 or the information terminal 7411, the display on the display unit 7000 can be switched.

[0558] Also, a game can be executed on the digital signage 7300 or the digital signage 7400 using the screen of the information terminal 7311 or the information terminal 7411 as an operation means (controller). Thereby, an unspecified number of users can participate in the game and enjoy it at the same time.

[0559] The electronic device shown in FIGS. 23(A) to 23(G) includes a housing 9000, a display unit 9001, a speaker 9003, operation keys 9005 (including a power switch or an operation switch), connection terminals 9006, a sensor 9007 (including a function of measuring force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor or infrared rays), a microphone 9008, etc.

[0560] The electronic devices shown in FIGS. 23(A) to 23(G) have various functions. For example, it can have functions such as displaying various information (still images, moving images, text images, etc.) on a display unit, a touch panel function, a function of displaying a calendar, date, or time, etc., a function of controlling processing by various software (programs), a wireless communication function, a function of reading and processing programs or data recorded on a recording medium, and so on. Note that the functions of the electronic device are not limited to these, and it can have various functions. The electronic device may have a plurality of display units. Also, the electronic device may be provided with a camera or the like, and have functions such as taking a still image or a moving image and storing it in a recording medium (external or built into the camera), and displaying the taken image on the display unit, and so on.

[0561] Details of the electronic devices shown in FIGS. 23(A) to 23(G) will be described below.

[0562] FIG. 23(A) is a perspective view showing a portable information terminal 9171. The portable information terminal 9171 can be used as, for example, a smartphone. Note that the portable information terminal 9171 may be provided with a speaker 9003, a connection terminal 9006, or a sensor 9007, etc. Also, the portable information terminal 9171 can display character and image information on its plurality of surfaces. FIG. 23(A) shows an example in which three icons 9050 are displayed. Also, information 9051 indicated by a dashed rectangle can be displayed on another surface of the display unit 9001. Examples of the information 9051 include notifications of incoming calls such as e-mail, SNS, and phone calls, titles of e-mail or SNS, etc., sender names, dates, times, remaining battery levels, radio wave intensities, and so on. Or, icons 9050 or the like may be displayed at the position where the information 9051 is displayed.

[0563] FIG. 23(B) is a perspective view showing a portable information terminal 9172. The portable information terminal 9172 has a function of displaying information on three or more sides of a display unit 9001. Here, an example is shown in which information 9052, information 9053, and information 9054 are displayed on different sides respectively. For example, the user can also check the information 9053 displayed at a position where it can be observed from above the portable information terminal 9172 in a state where the portable information terminal 9172 is stored in the breast pocket of a piece of clothing. The user can check the display without taking the portable information terminal 9172 out of the pocket, and can, for example, determine whether to receive a call.

[0564] FIG. 23(C) is a perspective view showing a tablet terminal 9173. The tablet terminal 9173 can execute various applications such as, as an example, a mobile phone, an e-mail, text viewing and creation, music playback, Internet communication, and a computer game. The tablet terminal 9173 has a display unit 9001, a camera 9002, a microphone 9008, and a speaker 9003 on the front surface of a housing 9000, and has operation keys 9005 as operation buttons on the left side surface of the housing 9000 and connection terminals 9006 on the bottom surface.

[0565] FIG. 23(D) is a perspective view showing a wristwatch-type portable information terminal 9200. The portable information terminal 9200 can be used as, for example, a smartwatch (registered trademark). Further, the display surface of the display unit 9001 is provided to be curved, and display can be performed along the curved display surface. Further, the portable information terminal 9200 can also make a hands-free call by mutually communicating with, for example, a wirelessly communicable headset. Further, the portable information terminal 9200 can also mutually transmit data with other information terminals and perform charging by means of the connection terminals 9006. Note that the charging operation may be performed by wireless power supply.

[0566] Figs. 23(E) to 23(G) are perspective views showing the foldable portable information terminal 9201. Further, Fig. 23(E) shows the state where the portable information terminal 9201 is unfolded, Fig. 23(G) shows the folded state, and Fig. 23(F) is a perspective view of the state in the middle of changing from one of Fig. 23(E) and Fig. 23(G) to the other. The portable information terminal 9201 is excellent in portability in the folded state and excellent in the listability of display due to a wide display area without seams in the unfolded state. The display unit 9001 included in the portable information terminal 9201 is supported by three housings 9000 connected by a hinge 9055. For example, the display unit 9001 can be bent with a curvature radius of 0.1 mm or more and 150 mm or less.

[0567] This embodiment can be appropriately combined with other embodiments or examples. Further, in this specification, when a plurality of configuration examples are shown in one embodiment, the configuration examples can be appropriately combined.

Example

[0568] [Synthesis Example 1] In this synthesis example, a method for synthesizing 4,8-di(9H-carbazol-9-yl)-[1]benzofuro[3,2-d]pyrimidine (abbreviation: 4,8Cz2Bfpm), which is an organic compound represented by the structural formula (100), will be specifically described.

[0569]

Chem.

[0570] <Step 1: Synthesis of 4,8Cz2Bfpm> First, into a 200 mL three-necked flask, 2.4 g (10 mmol) of 4,8-dichloro[1]benzofuro[3,2-d]pyrimidine, 3.7 g (22 mmol) of 9H-carbazole, 1.9 g (20 mmol) of sodium tert-butoxide (...

Claims

1. A compound having a benzofuro[3,2-d]pyrimidine skeleton or a benzothieno[3,2-d]pyrimidine skeleton, a first substituent, and a second substituent, the first substituent represents a carbazole skeleton, the second substituent represents any one of a carbazole skeleton, a dibenzofuran skeleton, a tetraphenylsilane skeleton, and a triphenylene skeleton; the first substituent is bonded to the 4-position of the benzofuro[3,2-d]pyrimidine skeleton or the 4-position of the benzothieno[3,2-d]pyrimidine skeleton; The second substituent is an organic compound bonded to the 8-position of the benzofuro[3,2-d]pyrimidine skeleton or the 8-position of the benzothieno[3,2-d]pyrimidine skeleton.

2. An organic compound represented by general formula (G1): 【Chemistry 1】 (In the formula, R １ ~R ８ each independently represents hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, or a substituted or unsubstituted cycloalkyl group having 3 to 6 carbon atoms; R ９ ~R １１ each independently represents hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 6 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms; X represents an oxygen atom or a sulfur atom; A １ represents any one of the substituents represented by the following general formulas (A-1) to (A-5). 【Chemistry 2】 (In the formula, R １２ ~R ５７ each independently represents hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 6 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms.

3. In claim 1 or 2, The lowest triplet excitation energy (T １ ) an organic compound having an electron energy level of 2.95 eV or less and 2.75 eV or more.

4. An organic compound represented by structural formula (100), structural formula (101), structural formula (102), or structural formula (103). 【Chemistry 3】

5. a first electrode, a second electrode, and a light-emitting layer between the first electrode and the second electrode; the light-emitting layer includes a first organic compound, a second organic compound, and a blue light-emitting substance; the second organic compound has a benzofuro[3,2-d]pyrimidine skeleton or a benzothieno[3,2-d]pyrimidine skeleton, a first substituent, and a second substituent; the first substituent represents a carbazole skeleton, the second substituent represents any one of a carbazole skeleton, a dibenzofuran skeleton, a tetraphenylsilane skeleton, and a triphenylene skeleton; the first substituent is bonded to the 4-position of the benzofuro[3,2-d]pyrimidine skeleton or the 4-position of the benzothieno[3,2-d]pyrimidine skeleton; the second substituent is an organic compound bonded to the 8-position of the benzofuro[3,2-d]pyrimidine skeleton or the 8-position of the benzothieno[3,2-d]pyrimidine skeleton, A light-emitting device, wherein an absolute value of a difference between a HOMO level of the first organic compound and a LUMO level of the second organic compound is 2.78 eV or more and 2.85 eV or less.

6. a first electrode, a second electrode, and a light-emitting layer between the first electrode and the second electrode; the light-emitting layer contains a first organic compound, a second organic compound represented by General Formula (G1), and a blue light-emitting substance, A light-emitting device, wherein an absolute value of a difference between a HOMO level of the first organic compound and a LUMO level of the second organic compound is 2.78 eV or more and 2.85 eV or less. 【Chemistry 4】 (In the formula, R １ ~R ８ each independently represents hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, or a substituted or unsubstituted cycloalkyl group having 3 to 6 carbon atoms; X represents an oxygen atom or a sulfur atom; A １ represents any one of the substituents represented by the following general formulas (A-1) to (A-5). 【Chemistry 5】 (In the formula, R １２ ~R ５７ each independently represents hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 6 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms.

7. A light-emitting device having an organic compound represented by structural formula (100), structural formula (101), structural formula (102), or structural formula (103). 【Chemistry 6】

8. 8. The light-emitting device according to claim 6 or 7, wherein the first organic compound and the second organic compound are a combination that generates an exciplex.

9. 8. The light-emitting device according to claim 6 or 7, wherein the emission spectrum of the light-emitting substance is not less than 400 nm and less than 490 nm.

10. 8. The light-emitting device according to claim 6 or 7, wherein the luminescent material is a phosphorescent luminescent material.

11. 8. The light-emitting device of claim 6 or 7, wherein the light-emitting layer comprises a fluorescent sensitizing material.

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