Cleaning equipment, imprinting equipment, cleaning method and method for manufacturing article

Abstract

To provide cleaning equipment that is advantageous for cleaning an original plate used to transfer patterns onto a substrate.SOLUTION: It is characterized that cleaning equipment for an original plate used to form patterns on imprint material on a substrate comprises: a stage that holds the original plate; a plasma irradiation section that irradiates plasma; a drive section that changes the position of at least one of the stage and the plasma irradiation section; and a control section that controls the plasma irradiation section and the drive section to start the plasma irradiation when the original plate is not located in the irradiation direction of the plasma irradiation section.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to a cleaning device, an imprint device, a cleaning method, and a method for manufacturing an article.

Background Art

[0002] With the increasing demand for miniaturization of semiconductor devices, in addition to conventional photolithography technology, imprint technology that forms a fine pattern of resin on a substrate by molding uncured resin (imprint material) on the substrate with a mold has attracted attention. In imprint technology, a nanostructure on the order of nanometers can be formed on the substrate.

[0003] In an imprint device, first, resin is supplied (coated) to an imprint area on a substrate, and light is irradiated in a state where the uncured resin on the substrate is in contact with the mold to cure the resin, and the mold is separated from the cured resin to form a pattern on the substrate.

[0004] In an imprint device, since the mold is brought into contact with the resin on the substrate, a cured product of the resin may remain on the mold. When an imprint process is performed with a cured product of the resin remaining on the mold, the remaining resin is directly transferred, and defects or the like occur in the pattern formed on the substrate. Therefore, the mold needs to be cleaned regularly.

[0005] Patent Document 1 discloses a technique for removing foreign matter by plasma. Patent Document 2 discloses a technique for providing a cleaning device for cleaning a member to be cleaned by plasma in an exposure device. Patent Document 3 discloses a technique for arranging the centers of an exhaust opening, a heat radiation opening of a heater, a plasma irradiation opening, and a gas discharge opening in a plasma head in a line to remove foreign matter attached to a substrate by plasma.

Prior Art Documents

Patent Documents

[0006]

Patent Document 1

Patent Document 2

Patent Document 3

Summary of the Invention

Problems to be Solved by the Invention

[0007] However, in conventional cleaning devices, there is a problem that minute particles generated from the electrodes or dielectrics constituting the plasma irradiation unit adhere to the surface of the substrate to be cleaned or the components of the cleaning device at the start of plasma irradiation. Therefore, an object of the present invention is to provide a cleaning device that is advantageous for cleaning a mold (master) used when transferring a pattern onto a substrate.

Means for Solving the Problems

[0008] The cleaning device of the present invention is a cleaning device for a mold (master) used for forming a pattern on an imprint material on a substrate, comprising a stage for holding the master, a plasma irradiation unit for irradiating plasma, a drive unit for changing the position of at least one of the stage and the plasma irradiation unit, and a control unit for controlling the plasma irradiation unit and the drive unit so as to start the plasma irradiation in a state where the mold (master) is not positioned in the irradiation direction of the plasma irradiation unit.

Effects of the Invention

[0009] According to the present invention, it is possible to provide a cleaning device that is advantageous for cleaning a mold (master) used when transferring a pattern onto a substrate.

Brief Description of the Drawings

[0010]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Mode for Carrying Out the Invention

[0011] Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings. In each figure, the same members or elements are denoted by the same reference numerals, and redundant descriptions are omitted. In the present embodiment, an example in which the present invention is applied to a mold (mold, original plate) used in an imprint device for forming a pattern on an imprint material on a substrate will be described, but the present invention may also be applied to a mask (original plate) used in an exposure device that projects and transfers a pattern onto a substrate. Thus, in the present invention, the original plate includes a mold used in an imprint device and a mask used in an exposure device.

[0012] <First Embodiment> FIG. 1 is a schematic diagram showing the configuration of a cleaning device 100 according to the first embodiment. In the following figures, in a plane parallel to the surface of the mold, the directions perpendicular to each other are defined as the X direction and the Y direction, and the direction perpendicular to the X direction and the Y direction (the direction perpendicular to the surface of the mold) is defined as the Z direction for explanation. The cleaning device 100 includes a mold stage 21 that holds the mold 1, a heating unit 2, a heat radiation unit 3 of the heating unit 2, and a plasma head 4. The heating unit 2 is held and driven by a drive mechanism 5.

[0013] Type 1 is used, for example, in an imprint apparatus that forms a pattern of an imprint material on a substrate. On one surface side of Type 1, a pattern portion 6 with an uneven pattern for shaping the imprint material supplied onto the substrate is formed in a three-dimensional shape. The pattern portion 6 is also called a mesa and is formed on a convex portion of several tens of μm to several hundreds of μm so that other than the pattern portion 6 of Type 1 does not contact the substrate during pressing. For this reason, a cured product of the imprint material tends to remain at the end of the pattern portion 6 called the mesa edge, and the cured product of the imprint material may accumulate when the imprint process is repeated.

[0014] In the central portion on the side opposite to the pattern portion 6 of Type 1 of the present embodiment, a core-out portion 7 (depression) bored in a cylindrical shape is formed. The core-out portion 7 is formed in a region corresponding to the uneven pattern portion 6, and more specifically, is a depression with an area wider than the uneven pattern portion 6.

[0015] The heat radiation portion 3 of the heating portion 2 is composed of, for example, a far-infrared heater. In an imprint apparatus adopting a photo-curing method, quartz is used as the material of Type 1 and has a transmittance of 90% or more for light with a wavelength of 0.2 μm to 2 μm. Since quartz has a low transmittance and easily absorbs heat in the irradiation region of far-infrared rays with a wavelength of 3 μm or more, it can be heated efficiently. The radicals generated in the plasma 8 irradiated from the plasma head 4 can increase the temperature of the pattern portion 6, thereby accelerating the reaction rate between the radicals and the cured product of the imprint material and increasing the cleaning efficiency of the pattern portion 6.

[0016] In order to prevent the particles contained in the gas generated by the chemical reaction of the plasma 8 from reattaching to the pattern portion 6, it is desirable to keep the temperature of the pattern portion 6 high. Therefore, the heat radiation portion 3 is disposed directly above the pattern portion 6, and it is desirable that the size of the heat radiation portion 3 be the same as or larger than the size of the pattern portion 6. When the mold 1 is conveyed into the cleaning apparatus 100 and mounted on the mold stage 21, the heating portion 2 is lifted in the Z direction by the drive mechanism 5 and retracted so as not to contact the mold 1. After the mold 1 is mounted on the mold stage 21, the heating portion 2 is lowered in the Z direction, the heat radiation portion 3 is disposed in the core-out portion 7 of the mold 1, and the distance between the lower surface of the heat radiation portion 3 and the bottom surface of the core-out portion 7 may be controlled by a control unit (not shown) so as to preferably be between 0.1 mm and 2 mm.

[0017] FIG. 2 is a top view of the cleaning apparatus of FIG. 1. The heating portion 2 is disposed substantially at the center of the core-out portion 7 of the mold 1 and is held by the drive mechanism 5. The heating portion 2 is smaller than the recessed shape of the core-out portion 7 and can be driven so that the lower surface of the heat radiation portion 3 is close to the bottom surface of the core-out portion 7. A measuring instrument (not shown) for measuring the position and shape of the mold 1 and the core-out portion 7 may be provided.

[0018] Returning to FIG. 1, the plasma 8 irradiated from the plasma head 4 is, for example, an atmospheric pressure plasma 8 generated in atmospheric pressure using a high-frequency power source. By using an atmospheric pressure plasma, it is possible to reduce costs. When the periphery of the plasma 8 is air, various gas-phase reactions occur, resulting in uneven cleaning of the pattern portion 6. In order to suppress the occurrence of unevenness, it is desirable to purge the periphery of the plasma 8 with an inert gas.

[0019] The purge gas passes through the gas flow path 9 and is discharged from the purge gas discharge opening 10. The purge gas flows over the upper surface of the plasma head 4, passes through the plasma irradiation portion 13, and is recovered from the gas exhaust opening 11 through the gas flow path 12. The harmful gas components of the purge gas may be treated with a decontamination device (not shown).

[0020] An electrode 14 is provided in the plasma irradiation unit 13, and plasma 8 is generated by applying a high-frequency voltage to the electrode 14. A first gas for generating the plasma 8 and a second gas containing a reactant are supplied through the gas flow path 15. The first gas and the second gas are recovered from the gas exhaust opening 11 through the gas flow path 12. The electrode 14 may have a parallel plate type structure covered with a dielectric or a torch type of cylindrical structure, but is not limited thereto, and any structure that can generate the plasma 8 may be used. The plasma head 4 may be provided with one plasma irradiation unit 13 for irradiating the plasma 8, or may be provided with a plurality of them.

[0021] At least one of the mold stage 21 holding the mold 1 and the plasma head 4 has a configuration in which it can move relatively in the XY plane by a driving unit (not shown), and the relative positional relationship between the mold 1 and the plasma head 4 can be changed. When the range irradiated by the plasma 8 on the mold 1 is narrow with respect to the region of the pattern portion 6, at least one of the mold stage 21 holding the mold 1 and the plasma head 4 moves in the XY plane, so that the entire pattern portion 6 can be cleaned.

[0022] Further, the degree of contamination due to the adhesion of foreign matter to the pattern portion 6 may be detected by a detection mechanism (not shown) or the like, and at least one of the mold stage 21 and the plasma head 4 may be driven while changing the moving speed and the moving range according to the degree of contamination. The movement on the XY plane may be a movement of only one axis or a two-axis movement. Further, cleaning may be performed only on the portion where foreign matter has adhered within the pattern portion 6 to shorten the cleaning time. Alternatively, cleaning may be performed on the foreign matter adhering to the mold 1 including the pattern portion 6.

[0023] The heating unit 2 held by the drive mechanism 5 may be driven in the Z direction so as not to contact the side surface of the core out portion 7 in accordance with the drive of the mold stage 21. Alternatively, the drive mechanism 5 may be moved in the XY plane in accordance with the movement of the mold stage 21.

[0024] According to the present embodiment, even when the irradiation range of the plasma 8 is narrow with respect to the pattern portion 6, foreign substances such as an imprint material deposited on the mold 1 can be efficiently removed while changing the relative positional relationship between the mold 1 and the plasma head 4. Further, according to the present embodiment, foreign substances such as an imprint material deposited on the mold 1 can be efficiently removed by irradiating the plasma 8 while maintaining the temperature of the pattern portion 6 at a high temperature.

[0025] At the start of irradiation of the plasma 8, in the case of a method of generating plasma by arc discharge of the electrode 14, electrode material is discharged as particles from the surface of the electrode 14 together with the plasma 8 from the plasma irradiation portion 13 by the arc discharge. Further, in the case of dielectric barrier discharge, the dielectric material is discharged as particles from the plasma irradiation portion 13 together with the plasma 8. Therefore, when the irradiation of the plasma 8 is started in a state where the plasma irradiation portion 13 is located below the mold 1 (the mold 1 is located in the plasma irradiation direction), there is a risk that particles of the electrode material or dielectric material discharged together with the plasma 8 will adhere to the mold 1.

[0026] In the cleaning apparatus of the present embodiment, in order to prevent adhesion of particles of the electrode material or dielectric material to the mold 1, the irradiation of the plasma 8 is started in a state where the lower surface 22 (other than the original plate) of the mold stage 21 is located above the plasma irradiation portion 13.

[0027] The cleaning method of the present embodiment will be described in order with reference to the flowchart of FIG. 3. The control unit (not shown) moves (changes) the relative positions of the mold stage 21 and the plasma irradiation portion 13 so that the plasma irradiation direction of the plasma irradiation portion 13 faces a position other than the mold 1 (step S101, pre-irradiation step). With the plasma irradiation direction of the plasma irradiation portion 13 facing a position other than the mold 1, the irradiation of the plasma 8 by the plasma irradiation portion 13 is started (step S102, irradiation start step).

[0028] Wait for a certain period of time to elapse from the start of the irradiation of the plasma 8 by the plasma irradiation unit 13. With the plasma 8 being irradiated, at least one of the mold stage 21 and the plasma head 4 is moved in the XY plane by the drive unit so that the pattern portion 6 and the plasma irradiation unit 13 overlap in the XY plane. That is, the relative positions of the mold stage 21 and the plasma head 4 are changed so that the plasma irradiation direction becomes a position facing the pattern portion 6 (step S103, movement step).

[0029] With the plasma irradiation direction facing the pattern portion 6, irradiate the plasma 8 to clean the pattern portion 6 of mold 1 (step S104, irradiation step). By starting the cleaning of mold 1 in this way, when starting the irradiation of the plasma 8 that generates a large amount of particles, since the plasma head 4 is not positioned under the pattern portion 6, it is possible to prevent particles from adhering to the pattern portion 6.

[0030] When the necessary cleaning is completed, while continuing the plasma irradiation, the relative positions of the mold stage 21 and the plasma irradiation unit 13 are moved by a drive unit (not shown) so that the plasma irradiation direction of the plasma irradiation unit 13 faces a position other than mold 1 (step S105, retraction step). When the plasma irradiation direction of the plasma irradiation unit 13 has moved to a state where it faces a position other than mold 1 (for example, a state facing the mold stage 21), stop the irradiation of the plasma 8 by the plasma irradiation unit 13 (step S106, irradiation end step).

[0031] As described above, in this embodiment, in step S101, after starting the irradiation of the plasma 8 and after a certain period of time has elapsed, the pattern portion 6 and the plasma head 4 are moved to a position where they face each other, and cleaning is started. On the other hand, particles emitted from the plasma head 4 may be detected, and after the particle detection amount becomes equal to or less than a threshold value, the pattern portion 6 and the plasma head 4 may be moved so as to face each other, and cleaning may be started. In that case, a port for collecting particles may be provided near the plasma head 4, and the number of particles in the plasma 8 may be measured by a particle counter through the port.

[0032] According to this embodiment, foreign substances such as imprint materials deposited on the type 1 can be efficiently removed without attaching the particles generated at the start of the irradiation of the plasma 8 to the pattern portion 6 of type 1.

[0033] <Second Embodiment> Next, the second embodiment will be described. Regarding the same configurations as those in the first embodiment in the second embodiment, the description will be omitted, and different configurations will be described. FIG. 4 is a schematic diagram showing the configuration of the cleaning apparatus 100 according to the second embodiment. The cleaning apparatus 100 of the second embodiment includes an exhaust opening 23 connected to an exhaust means (not shown) for exhausting and collecting particles on the lower surface 22 of the mold stage 21 that holds the type 1.

[0034] By the illustrated control unit, at the start of the irradiation of the plasma 8, the relative position between the plasma head 4 and the mold stage 21 is adjusted so that the plasma head 4 faces the exhaust opening 23 on the lower surface 22 of the mold stage 21. The irradiation of the plasma 8 is started with the plasma head 4 facing the exhaust opening 23, and the particles generated at the start of the irradiation of the plasma 8 can be collected by the airflow passing through the exhaust passage 24 without diffusing around.

[0035] After starting the irradiation of the plasma 8 and after a certain period of time has elapsed, while keeping the plasma 8 irradiated, at least one of the mold stage 21 and the plasma head 4 is moved in the XY plane to clean the pattern portion 6 of the mold 1.

[0036] Referring to the flowchart of FIG. 5, the cleaning method of the present embodiment will be described in order. The control unit (not shown) moves (changes) the relative positions of the mold stage 21 and the plasma irradiation unit 13 so that the plasma irradiation direction of the plasma irradiation unit 13 faces the exhaust opening 23 formed in the lower surface 22 of the mold stage 21 (step S201, pre-irradiation step). With the plasma irradiation direction of the plasma irradiation unit 13 facing the exhaust opening 23, the irradiation of the plasma 8 by the plasma irradiation unit 13 is started (step S202, irradiation start step).

[0037] Steps S103 to S106 in the flowchart of FIG. 5 are the same as those in the first embodiment described in FIG. 3, so the description here is omitted.

[0038] Also in the second embodiment, in step S201, after starting the irradiation of the plasma 8 and after a certain period of time has elapsed, it is moved to a position where the pattern portion 6 and the plasma head 4 face each other, and the cleaning is started. On the other hand, similar to the first embodiment, the particles emitted from the plasma head 4 are detected, and after the particle detection amount becomes equal to or less than the threshold value, the pattern portion 6 and the plasma head 4 are moved so as to face each other, and the cleaning may be started.

[0039] In the second embodiment, a branch (not shown) for collecting particles may be provided in the flow path of the exhaust flow path 24, and the number of particles may be measured by a particle counter (detection unit) (not shown) provided at the branch destination. With this configuration, at the start of the irradiation of the plasma 8, after the number of particles (detection result, number of particles) by the particle counter becomes equal to or less than the threshold value, it may be moved to the cleaning position and the cleaning may be started.

[0040] The exhaust opening 23 may be provided only one on the mold stage 21, or a plurality of exhaust openings 23 may be provided on the mold stage 21. Further, the position where the exhaust opening is installed may be other than mold 1 (other than the original plate), and the exhaust opening alone may be independently installed at a position on the mold stage 21, or other members, or a position where the irradiation direction does not face mold 1. When a plurality of exhaust openings 23 are provided, after placing mold 1 on the mold stage 21, it is preferable to move the exhaust opening 23 closest to the plasma irradiation unit 13 to a position above the plasma irradiation unit 13 and start the irradiation of plasma 8. Thereby, the time until the start of cleaning can be shortened.

[0041] After moving the exhaust opening 23 so that it is located above the plasma irradiation unit 13 so as to be able to collect the particles generated at the end of the irradiation of plasma 8, the irradiation of plasma 8 may be terminated. Also, a second exhaust opening (not shown) may be provided on the opposite side of mold 1 with respect to the exhaust opening 23 used at the start of plasma irradiation.

[0042] Thereby, when cleaning is completed on the opposite side of the exhaust opening 23 with the plasma irradiation unit 13 sandwiching the pattern portion 6, after moving the second exhaust opening so that it is located above the plasma irradiation unit 13, the irradiation of plasma 8 can be terminated. By having the second exhaust opening, regardless of the position of the plasma irradiation unit 13 at the end of cleaning, the plasma irradiation unit 13 can be relatively moved quickly to the position of the exhaust opening to collect the particles generated at the end of the irradiation of plasma 8.

[0043] FIG. 6 shows a processing flow in the case of terminating the irradiation of plasma 8 after moving the exhaust opening so that it is located above the plasma irradiation unit 13 in the second embodiment. In the flowchart, steps S201, S202, S103, and S104 are the same as those in FIG. 5, so the description thereof is omitted. When the necessary cleaning is completed in step S104, while continuing the plasma irradiation, the relative positions of the mold stage 21 and the plasma irradiation unit 13 are moved by a drive unit (not shown) so that the plasma irradiation direction of the plasma irradiation unit 13 faces the exhaust opening (step S205, retraction step). Here, the exhaust opening may be the exhaust opening 23 that faced the plasma irradiation start, the second exhaust opening, or other exhaust openings.

[0044] Step S106 in the flowchart of FIG. 6 is the same as that in the first embodiment described in FIG. 3, so the description here is omitted.

[0045] According to this embodiment, foreign substances such as the imprint material deposited on the mold 1 can be efficiently removed without attaching particles generated at the start of the irradiation of the plasma 8 or particles generated at the end of the irradiation to the pattern portion 6 of the mold 1, the lower surface 22 of the mold stage 21, or the upper surface of the plasma head 4.

[0046] <Embodiment of Imprint Apparatus> As an application example of the present invention, the cleaning device 100 may be provided inside the imprint apparatus. FIG. 7 is a schematic diagram showing the configuration of an imprint apparatus 200 to which the cleaning device 100 is applied. The imprint apparatus 200 is an apparatus that forms a pattern of an imprint material on a substrate 202 using a mold 1. The imprint apparatus 200 includes a mold holding unit 201 that holds and moves the mold 1, a substrate stage 203 that holds and moves the substrate 202, a transport unit 204 that transports the mold 1, a recovery unit 205, and the cleaning device 100.

[0047] The recovery unit 205 recovers the gas generated when the cleaning device 100 cleans the mold 1, particularly the gas that inhibits the imprint process. However, when no gas that inhibits the imprint process is generated or when the cleaning device 100 is used in a form independent of the imprint apparatus 200, the recovery unit 205 is not necessarily an essential component.

[0048] The configuration of the cleaning device 100 according to this embodiment is the same as that of the above-described embodiment. Also, if there is a place in the imprint device 200 for storing a plurality of masters 1 and cleaning is possible there, imprint processing may be performed using other masters in parallel with the cleaning of the master 1. By providing the cleaning device 100 inside the imprint device 200, the distance for transporting the master 1 to the cleaning device 100 can be shortened, so that the cleaning processing time can be shortened.

[0049] <Embodiment of a method for manufacturing an article> A method for manufacturing a device (such as a semiconductor integrated circuit element or a liquid crystal display element) as an article includes a step of forming a pattern on a substrate 202 (wafer, glass plate, film-like substrate) using the above-described imprint device 200.

[0050] Furthermore, the manufacturing method may include a step of etching the substrate 202 on which the pattern is formed. In addition, when manufacturing other articles such as a patterned medium (recording medium) or an optical element, the manufacturing method may include other processes for processing the substrate 202 on which the pattern is formed instead of etching.

[0051] The method for manufacturing an article according to this embodiment is advantageous in at least one of the performance, quality, productivity, and production cost of the article as compared with the conventional method.

[0052] <Other embodiments> As described above, the preferred embodiments of the present invention have been described. However, the present invention is not limited to these embodiments, and various modifications and changes are possible within the scope of the gist thereof.

[0053] The disclosure of this embodiment includes the following configurations and methods. (Configuration 1) A cleaning device for a master used for forming a pattern on an imprint material on a substrate, a stage for holding the master, A plasma irradiation unit that irradiates plasma, a drive unit that changes the position of at least one of the stage and the plasma irradiation unit, and a control unit that controls the plasma irradiation unit and the drive unit so as to start irradiation of the plasma in a state where the original plate is not positioned in the irradiation direction of the plasma irradiation unit. A cleaning device characterized by having. (Configuration 2) The control unit starts irradiation of the plasma in a state where the original plate is not positioned in the irradiation direction of the plasma irradiation unit, and controls the plasma irradiation unit and the drive unit so that the original plate is positioned in the irradiation direction in a state where the plasma is irradiated. The cleaning device according to Configuration 1, wherein the original plate is cleaned. (Configuration 3) It is provided with an exhaust opening provided outside the original plate, The control unit controls the plasma irradiation unit and the drive unit so as to start irradiation of the plasma in a state where the exhaust opening is positioned in the irradiation direction of the plasma irradiation unit. The cleaning device according to Configuration 1 or 2, characterized by the above. (Configuration 4) The control unit controls the plasma irradiation unit and the drive unit so as to end irradiation of the plasma in a state where the original plate is not in the irradiation direction. The cleaning device according to any one of Configurations 1 to 3, characterized by the above. (Configuration 5) It is provided with an exhaust opening provided outside the original plate, The control unit controls the plasma irradiation unit and the drive unit so as to end irradiation of the plasma in a state where the exhaust opening is positioned in the irradiation direction. The cleaning device according to any one of Configurations 1 to 4, characterized by the above. (Configuration 6) The exhaust opening is configured on the stage. The cleaning device according to Configuration 3 or 5, characterized by the above. (Configuration 7) The cleaning device according to Configuration 3, 5, or 6, characterized by having a plurality of the exhaust openings. (Configuration 8) The position where the irradiation of the plasma starts and the position where the irradiation of the plasma ends are arranged at positions facing each other with the original plate therebetween, the cleaning apparatus according to any one of Configurations 1 to 7. (Configuration 9) having a detection unit that detects particles in the plasma, The control unit starts control of the plasma irradiation unit and the drive unit so that the original plate is positioned in the irradiation direction in a state where the plasma is irradiated, based on a detection result of the detection unit after the irradiation of the plasma is started, the cleaning apparatus according to any one of Configurations 1 to 8. (Configuration 10) The detection unit is a particle counter that detects the number of particles in the plasma, When the number of particles detected by the detection unit after the irradiation of the plasma is started is equal to or less than a threshold value, the control unit controls the plasma irradiation unit and the drive unit so that the original plate is positioned in the irradiation direction by the plasma irradiation unit in a state where the plasma is irradiated, the cleaning apparatus according to Configuration 9. (Configuration 11) An imprint apparatus that forms a pattern on an imprint material on a substrate using a mold as the original plate, An imprint apparatus, comprising the cleaning apparatus according to any one of Configurations 1 to 10. (Method 1) A step of forming a pattern on a substrate using the imprint apparatus according to Configuration 11, and a step of processing the substrate on which the pattern has been formed in the step, and A method for manufacturing an article, characterized by manufacturing an article using the processed substrate. (Method 2) A method for cleaning an original plate used for forming a pattern on an imprint material on a substrate, a pre-irradiation step of driving at least one of a stage that holds the original plate and the plasma irradiation unit so that the original plate is not positioned in the irradiation direction of the plasma irradiation unit that irradiates plasma, After the pre-irradiation step, an irradiation start step of starting the irradiation of the plasma; After the irradiation start step, a movement step of driving at least one of the plasma irradiation unit and the original plate so that the original plate is positioned in the irradiation direction while the plasma is being irradiated; After the movement step, an irradiation step of irradiating the original plate with the plasma to clean the original plate, characterized in that the cleaning method has the irradiation step. (Method 3) After the irradiation step, a retraction step of driving at least one of the plasma irradiation unit and the original plate so that the original plate is not positioned in the irradiation direction while the plasma is being irradiated; After the retraction step, an irradiation end step of ending the irradiation of the plasma, characterized in that the cleaning method according to Method 2 has the irradiation end step.

Explanation of reference numerals

[0054] Type 1 (original plate) 13 Plasma irradiation unit 21 Stage 100 Cleaning device

Claims

1. A cleaning device for forming a pattern on an imprint material on a substrate, comprising: a stage for holding the master; a plasma irradiation unit for irradiating plasma; a drive unit for changing the position of at least one of the stage and the plasma irradiation unit; a control unit for controlling the plasma irradiation unit and the drive unit to start irradiation of the plasma in a state where the master is not positioned in the irradiation direction of the plasma irradiation unit.

2. The cleaning device according to claim 1, wherein the control unit starts irradiation of the plasma in a state where the master is not positioned in the irradiation direction of the plasma irradiation unit, and controls the plasma irradiation unit and the drive unit so that the master is positioned in the irradiation direction in a state where the plasma has been irradiated, thereby cleaning the master.

3. comprising an exhaust opening provided other than the master; The cleaning device according to claim 1, wherein the control unit controls the plasma irradiation unit and the drive unit to start irradiation of the plasma in a state where the exhaust opening is positioned in the irradiation direction of the plasma irradiation unit.

4. The cleaning device according to claim 1, wherein the control unit controls the plasma irradiation unit and the drive unit to end irradiation of the plasma in a state where the master is not in the irradiation direction.

5. comprising an exhaust opening provided other than the master; The cleaning device according to claim 1, wherein the control unit controls the plasma irradiation unit and the drive unit to end irradiation of the plasma in a state where the exhaust opening is positioned in the irradiation direction.

6. The cleaning device according to claim 3, wherein the exhaust opening is formed in the stage.

7. The cleaning device according to claim 3, having a plurality of the exhaust openings.

8. The cleaning device according to claim 1, wherein the position where irradiation of the plasma starts and the position where irradiation of the plasma ends are arranged at positions facing each other with the master therebetween.

9. having a detection unit for detecting particles in the plasma; The cleaning apparatus according to claim 1, wherein the control unit starts controlling the plasma irradiation unit and the drive unit so that the original plate is positioned in the irradiation direction in a state where the plasma is irradiated, based on the detection result of the detection unit after the start of the plasma irradiation.

10. The detection unit is a particle counter that detects the number of particles in the plasma, The cleaning apparatus according to claim 9, wherein the control unit controls the plasma irradiation unit and the drive unit so that the original plate is positioned in the irradiation direction by the plasma irradiation unit in a state where the plasma is irradiated, when the number of particles detected by the detection unit after the start of the plasma irradiation is equal to or less than a threshold value.

11. An imprint apparatus that forms a pattern on an imprint material on a substrate using a mold as an original plate, An imprint apparatus, comprising the cleaning apparatus according to any one of claims 1 to 10.

12. A step of forming a pattern on a substrate using the imprint apparatus according to claim 11, A step of processing the substrate on which the pattern is formed in the above step, and A method for manufacturing an article, characterized by manufacturing an article using the processed substrate.

13. A method for cleaning an original plate used for forming a pattern on an imprint material on a substrate, An irradiation pre-step of driving at least one of a stage that holds the original plate and the plasma irradiation unit so that the original plate is not positioned in the irradiation direction of the plasma irradiation unit that irradiates plasma, An irradiation start step of starting the irradiation of the plasma after the irradiation pre-step, A movement step of driving at least one of the plasma irradiation unit and the original plate so that the original plate is positioned in the irradiation direction in a state where the plasma is being irradiated after the irradiation start step, A cleaning method, comprising an irradiation step of irradiating the original plate with the plasma to clean the original plate after the movement step.

14. A retraction step of driving at least one of the plasma irradiation unit and the original plate so that the original plate is not positioned in the irradiation direction in a state where the plasma is being irradiated after the irradiation step, The cleaning method according to claim 13, further comprising an irradiation end step of ending the irradiation of the plasma after the retraction step.

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