Electronic apparatus

Abstract

To provide an electronic apparatus with excellent portability, or an electronic apparatus with excellent perspicuity.SOLUTION: In an electronic apparatus, a display portion including a light-emitting element is formed on a flexible film. By rotating a hinge to bend the display portion, the size of the electronic apparatus can be reduced. In the electronic apparatus with the reduced size, the display portion is provided so as to cover a housing and regions capable of display are provided on a front surface, side surfaces, and a back surface of the electronic apparatus. Moreover, the display portion can be developed.SELECTED DRAWING: Figure 3

Description

Technical Field

[0001] One aspect of the present invention relates to a display device. In particular, it relates to a display device that has flexibility and can be curved. Further, one aspect of the present invention relates to an electronic device including the display device.

[0002] Note that one aspect of the present invention is not limited to the above technical field. The technical field of one aspect of the invention disclosed in this specification or the like relates to an article, a method, or a manufacturing method. Or, one aspect of the present invention relates to a process, a machine, a manufacture, or a composition (composition of matter). Therefore, more specifically, examples of the technical field of one aspect of the present invention disclosed in this specification include semiconductor devices, display devices, light-emitting devices, lighting devices, power storage devices, memory devices, their driving methods, or their manufacturing methods.

[0003]

Background Art

[0003] In recent years, display devices are expected to be applied to various uses and are becoming more diversified. For example, display devices used in electronic devices for portable use are required to be thin, lightweight, or difficult to break. Also, new uses that have not existed before are being demanded.

[0004]

[0005]

Prior Art Documents

Patent Documents

[0005] [Patent Document 1] JP 2003-174153 A Summary of the Invention [Problem to be solved by the invention]

[0006] In recent years, the amount of information displayed has increased by enlarging the display area of ​​the display device, and the display list On the other hand, for mobile device applications, the display devices are becoming larger. This reduces portability. It has been difficult to achieve both high speed and high portability.

[0007] An object of one embodiment of the present invention is to provide an electronic device with excellent portability. It is an object of the present invention to provide an electronic device with excellent visibility. It is an object of the present invention to provide a novel display device or electronic device. One of the goals of the project is to

[0008] The description of these problems does not preclude the existence of other problems. It is not necessary to solve all of these problems. Problems other than those mentioned above are not necessarily solved. It will become clear from the description of the specification, etc., and problems other than those mentioned above will not be identified from the description of the specification, etc. It is possible to extract [Means for solving the problem]

[0009] One embodiment of the present invention is a display unit having a light-emitting element over a flexible film, A fixed first support, two hinges at both ends of the first support, and a hinge between the first support and the first support. The second support and the third support are sandwiched between the first cover and the second support, and the second support is a first cover that hides the end of the display unit. It has a part, and the angle formed by the second support and the first support changes due to the rotation of the hinge. The first It is an electronic device in which the end portion that was hidden by the cover portion is exposed and the area of the display portion becomes wider.

[0010] In the above configuration, the width a of the end portion that was hidden by the first cover portion is such that the second support is at the hinge wider than the product of the radius of curvature r and π in the region where the display portion is bent by the rotation. This specification discloses an electronic device in which display portions are provided on the front surface, side surfaces, and back surface, and the total thickness can be made about twice the radius of curvature r. Therefore, when reducing the thickness of the electronic device, it is preferable to reduce the radius of curvature r, and the radius of curvature r is 10 mm or less, preferably 5 mm or less.

[0011] Also, in the above configuration, due to the rotation of the hinge, the flexible film has a mechanism of sliding on the surface of the second support. Also, due to the rotation of the other hinge, the flexible film has a mechanism of sliding on the surface of the third support.

[0012] Also, another configuration includes a display portion having a light-emitting element on the flexible film, a first support fixed to the central portion of the display portion, two hinges at both ends of the first support, a second support and a third support sandwiching the first support, the second support has a first cover portion overlapping with the first end portion of the display portion, the third support has a second cover portion overlapping with the second end portion of the display portion, the angle formed by the second support and the first support changes due to the rotation of the hinge, a part of the display portion overlapping with the hinge is bent, the area of the first end portion of the display portion overlapping with the first cover portion is reduced, and the angle formed by the third support and the first support changes due to the rotation of the hinge. The hinge and a part of the display unit that overlaps with the second cover unit are bent, and the part of the display unit that overlaps with the second cover unit is bent. The electronic device has a reduced area at the second end of the part.

[0013] Another feature is the configuration in which the display can be folded by rotating the hinge to make it smaller. The configuration includes a first region, a second region adjacent to the first region, and a second region adjacent to the first region. a third region adjacent to the second region; a fourth region adjacent to the second region; and a fifth region adjacent to the third region. The electronic device is provided with a display unit having a display area, and the display unit is formed on the same flexible film. the second region being a first side of the electronic device and the third region being a second side of the electronic device. The fourth region overlaps with the first region, and the fifth region overlaps with the first region. The fourth and fifth regions are electronic devices that do not overlap.

[0014] In a compact electronic device, the display unit is provided so as to encase the housing, and the display unit is disposed on the surface of the electronic device. The display area is on the front, side, and back. It is possible. Effect of the Invention

[0015] It is possible to provide an electronic device with excellent portability. Or, it is possible to provide an electronic device with excellent visibility. Alternatively, it is possible to provide a highly reliable electronic device, or a novel display device. or electronic devices. The description of these effects does not preclude the existence of other effects. It is to be noted that one embodiment of the present invention does not necessarily have all of these effects. Effects other than those mentioned above will be obvious from the description, drawings, claims, etc. It is not possible to extract any other effects from the description, drawings, claims, etc. is possible.

Brief Description of the Drawings

[0016]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

Figure 9

Figure 10

Figure 11

Figure 12

Embodiments for Carrying Out the Invention

[0017] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and various changes can be made to its form and details without departing from the spirit and scope of the present invention, which can be easily understood by those skilled in the art. Therefore, the present invention is not to be construed as being limited to the description of the

[0018] In the configuration of the invention described below, for the same part or parts having similar functions, the same reference numerals are commonly used among different drawings, and repeated explanations thereof are omitted. Also, when referring to similar functions, the hatching patterns may be the same and may not be particularly labeled.

[0019] Note that in each drawing described in this specification, the size of each component, the thickness of each layer, or the area may be exaggerated for clarity. Therefore, it is not necessarily limited to that scale.

[0020] Note that ordinal numbers such as "first", "second", etc. in this specification and the like are attached to avoid confusion of components and do not numerically limit them.

[0021] Note that in this specification and the like, that surface A is parallel to surface B means that the angle formed by the normal line of surface A and the normal line of surface B is in the state of -20° or more and 20° or less. Also, in this specification and the like, that surface C is perpendicular to surface B means that the angle formed by the normal line of surface C and the normal line of surface B is in the state of 70° or more and 110° or less. Also, in this specification and the like, that line C is perpendicular to surface B means that the angle formed by line C and the normal line of surface B is in the state of -20° or more and 20° or less. Also, in this specification and the like that line C is parallel to surface B means that the angle formed by line C and the normal line of surface B is in the state of 70° or more and 110° or less.

[0022] (Embodiment 1) In this embodiment, a configuration example of an electronic device according to an aspect of the present invention will be described with reference to the drawings.

[0023] FIG. 1(A) shows a part of the configuration of the electronic device 200 shown in this configuration example (display panel, support, hinge ​​​It is a perspective view showing (something). The electronic device 200 includes a display unit 201, a support 202a, a support 202b, a support 202c, and hinges 203a and 203b.

[0024] The support 202a and the support 202b are connected by the hinge 203a. The support 2 02a and the support 202b can rotate relative to each other about the rotation axis 211a of the hinge 203a. In the configuration example shown in Fig. 1(A), it is possible to rotate by an angle of 90° or more about the rotation axis 211a from the state where the support 202a and the support 202 b are horizontal.

[0025] Here, the rotation axis 211a of the hinge 203a is a straight line that coincides with the rotation axis of the rotation mechanism of the hinge 203a. For example, as shown in Fig. 1(B), when the hinge 203a has a mechanism that rotates about the axis 211c of a physical object (such as a mandrel), the straight line that coincides with the extension direction of the axis is defined as the rotation axis 211a. Fig. 1(A) is a perspective view from the display surface side, while Fig. 1(B) is a perspective view from the side opposite to the display surface. (such as a mandrel) rotates about the axis 211c, the straight line that coincides with the extension direction of the axis is taken as the rotation axis 211a. Fig. 1(A) is a perspective view from the display surface side, while Fig. 1(B) is a perspective view from the side opposite to the display surface.

[0026] The support 202a and the support 202c are connected by the hinge 203b. The support 2 02a and the support 202c can rotate relative to each other about the rotation axis 211b of the hinge 203b. In the configuration example shown in Fig. 1(A), it is possible to rotate by an angle of 90° or more about the rotation axis 211b from the state where the support 202a and the support 202 c are horizontal.

[0027] The display unit 201 has a display surface on which an image or the like that the user can view is displayed. In this specification ​​​​​In the like, the display surface refers to the surface on the side where an image or the like is displayed among the surfaces of the display panel.

[0028] At least a part of the display unit 201 has flexibility. Therefore, it is possible to reversibly deform the display unit 201 from a state where the display surface is flat to a state having a curved surface. The display unit 201 only needs to have at least flexibility in the part that deforms as the relative positions of the two supports change, and the other parts do not necessarily have to have flexibility.

[0029] A part of the display unit 201 is supported by and fixed to the support 202b. On the other hand , the display unit 201 is supported by but not fixed to the supports 202a and 202c, and is a frame having cover parts 202d and 202e that overlap the periphery of the display panel . The cover parts 202d and 202e serve to hide a part of the display area, the display drive circuit, the connection part with the FPC, etc.

[0030] The electronic device 200 according to one aspect of the present invention has a configuration in which the flexible display unit 201 is supported by three supports. The display unit 201 can be deformed by bending or the like . For example, the display unit 201 can be bent at two locations so that the display surface faces the outside of the curved surface . When bent near the rotation axis 211a, a mechanism is provided in which the support 202a and the display unit 201 slide . Also, when bent at the rotation axis 211b, a mechanism is provided in which the support 202c and the display unit 201 slide. By using such a support method, for example, when the display unit 201 is in a flat state, that is, when the display unit is bent at two locations from FIG. 2(C) to be miniaturized, that is, when the supports are relatively rotated in FIG. 2(A), the aberration generated in the display unit 201 The sliding action compensates for this, and damage to the display unit 201 can be prevented. As shown in (B), the display unit 201 can be made smaller by bending it at two points. As shown in FIG. 2A, an electronic device 200 according to one embodiment of the present invention has a display portion 201 folded. When unfolded as shown in Figure 2(C), it has a wide, seamless surface. The display area provides excellent visibility of the display.

[0031] 2(A), 2(B), and 2(C) are also diagrams showing one example of the configuration of the electronic device 200 shown in this configuration example. 2(A), 2(B), and 2(C) are perspective views showing the display panel, the support, and the hinge. In FIG. 2(C), the hinge is illustrated so that each component can be easily understood. In order to prioritize the design of the device 200, the hinge may be stored inside the housing so that it is less visible. Figure 2(B) shows the folded screen when viewed from the opposite side to the main display surface. In order to maintain the state shown in FIG. It is also possible to bring it into contact with 02c and fix them together using a magnet or the like.

[0032] In addition, when fixing the display unit 201 to each support, the display unit 201 and each support may be fixed by, for example, adhesive or screws. or a method of mechanically fixing the display unit 201 by sandwiching it between members.

[0033] FIG. 3A is a schematic cross-sectional view of the electronic device 200 when unfolded. FIG. 2 is a schematic cross-sectional view of the electronic device in a compact state in which a display unit 201 of the electronic device is bent at two points. In order to make each component easier to understand, the hinge is illustrated large. The radius of curvature r is 5 mm or less, which is a sufficiently small value compared to the width L.

[0034] Among the display unit 201, the first region that overlaps with the housing 207 of the electronic device 200 and overlaps with the support 202b is the main display region, and the portion of the width L of the first region is not bent.

[0035] Among the display unit 201, there are two portions (second regions) that can be bent, and the width of each of the second regions is πr. Also, the width of the region (third region) that can be bent and located on the back side of the first region is width D respectively, and it is a region that is not fixed and slides.

[0036] Also, the width of the fourth region that overlaps with the cover portions 202d and 202e of the supports 202a and 202c is width a respectively. This width a has a relationship of the formula a > πr. As shown in FIGS. 3(A) and 3(B), since there is a fourth region hidden by the cover portions 202d and 202e of the supports 202a and 202c, the exposed area of the display unit 201 shown in FIG. 3(B) when folded is wider than when unfolded.

[0037] Also, FIG. 4(A) shows the relationship of the widths of the respective regions when unfolded. The portion of the width a of the fourth region can also be a displayable region. When unfolded, it overlaps with the cover portions 202d and 202e and the display cannot be seen, but when the display unit is folded, it can be used as a display region on the back side. The periphery of the single flexible film on which the display unit and the like are formed is indicated by a chain line 209. As shown in FIG. 4(A), the periphery of the flexible film is designed to be hidden by the cover portions 202d and 202e, and the frame portions 202f and 202g. The frame portions 202f and 202g may be constituted by a part of the supports 202a, 202b, and 202c, or may be provided separately. The frame portions 20 may be constituted by a part of the supports 202a, 202b, and 202c, or may be provided separately. ​The distance W between 2f and the frame portion 202g is determined as the length of one side of the display portion 201. When the electronic device is unfolded, the display area of the display portion 201 is a rectangle with one side being W and the other side being (L + 2πr + 2D). For example, when the aspect ratio of the display area is 9:16, it is sufficient to make W:(L + 2πr + 2D) = 9:16 when unfolded. Also, when the hinge of the electronic device is rotated to be miniaturized, the area of the display area is a rectangle with one side being W and the other side being L, which is the first region, and two second regions adjacent to this region with a curved surface, one side being W and the other side being πr, and two third regions with one side being W and the other side being D. The total area is the sum of these areas.

[0038] Also, FIG. 4(B) shows a cross-sectional schematic view when the electronic device is cut along the axis 211c and the rotation axis 211a.

[0039] Note that various electronic components such as a battery, a printed wiring board on which various ICs such as an image processing circuit, an arithmetic unit, and a drive circuit are mounted, a wireless receiver, a wireless transmitter, a wireless power receiver, and an acceleration sensor are appropriately incorporated into the housing 207, so that the electronic device 200 can function as a mobile terminal, a portable image playback device, a portable lighting device, etc. Also, various input / output terminals including a camera, a speaker, a power supply terminal, a signal supply terminal, etc., and various sensors including an optical sensor, operation buttons, etc. may be incorporated into the housing 207.

[0040] Also, the thickness of the display portion 201 is 5 μm or more and 2000 μm or less, preferably 5 μm or more and 10 00 μm or less, more preferably 10 μm or more and 500 μm or less, and even more preferably 20 mm ​​​​It is preferably 300 μm or less. The thinner the display unit 201 is, the smaller the minimum radius of curvature that can be tolerated, and it becomes possible to make the electronic device 200 thinner.

[0041] Also, when the display unit 201 is too thin and lacks mechanical strength, at least a sheet or the like having flexibility may be attached to at least the curved portion of the display unit 201 to compensate for the strength. For example , in addition to elastic bodies such as hard rubber, metals such as plastic and aluminum, alloys such as stainless steel and titanium alloy, and rubbers such as silicone rubber can be used. It is preferable to use a material with lower flexibility than the display unit 201 for the sheet. Also, when the sheet does not have light transmittance, it may be disposed on the back side of the display unit 201 or in a region outside the display surface. A sheet having an opening in a portion overlapping the display surface may be disposed on the display surface side, and the display panel may be sandwiched between two sheets. sheets.

[0042] In the state where the two supports are folded, that is, in the state where the curved portion of the display unit 201 is curved with the smallest radius of curvature , the radius of curvature r is set to be 0.1 mm or more and 20 mm or less, preferably 0.5 mm or more and 15 mm or less, more preferably 1 mm or more and 10 mm or less, and preferably, typically, it is set to be 4 mm or less.

[0043] Here, the radius of curvature r at the curved portion of the display unit 201 refers to the smallest value among the radii of curvature of the curved display surface.

[0044] (Embodiment 2) In this embodiment, a configuration example and a manufacturing method example of a light-emitting panel applicable to the display panel of an electronic device according to an aspect of the present invention will be described. ​​

[0045] <Specific Example 1> FIG. 5(A) shows a plan view of the light-emitting panel, and FIG. 5(C) shows an example of a cross-sectional view between the dashed-dotted lines A1 - A2 in FIG. 5(A). The light-emitting panel shown in Specific Example 1 is a top-emission type light-emitting panel using a color filter method. In this embodiment, the light-emitting panel may have a configuration in which, for example, one color is represented by three sub-pixels of R (red), G (green), and B (blue), or a configuration in which one color is represented by four sub-pixels of R (red), G (green), B (blue), and W (white), etc. There is no particular limitation on the color elements, and colors other than RGBW may be used. For example, it may be composed of yellow, cyan, magenta, etc.

[0046] The light-emitting panel shown in FIG. 5(A) includes a light-emitting part 804, a driving circuit part 806, and an FPC (Flexible Printed Circuit) 808. The light-emitting elements and transistors included in the light-emitting part 804 and the driving circuit part 806 are encapsulated by a substrate 801, a substrate 803, and a sealing layer 823.

[0047] The light-emitting panel shown in FIG. 5(C) includes a substrate 801, an adhesive layer 811, an insulating layer 813, a plurality of transistors, a conductive layer 857, an insulating layer 815, an insulating layer 817, a plurality of light-emitting elements, an insulating layer 821, a sealing layer 823, an overcoat 849, a coloring layer 845, a light-shielding layer 847, an insulating layer 843, an adhesive layer 841, and a substrate 803. The sealing layer 823, the overcoat 849, the insulating layer 843, the adhesive layer 841, and the substrate 803 are transmissive to visible light.

[0048] The light-emitting part 804 has transistors on the substrate 801 via the adhesive layer 811 and the insulating layer 813. It has a transistor 820 and a light-emitting element 830. The light-emitting element 830 has a lower electrode 83 1 on the insulating layer 817, an EL layer 833 on the lower electrode 831, and an upper electrode 835 on the EL layer 833. The lower electrode 831 is electrically connected to the source electrode or drain electrode of the transistor 820. The end of the lower electrode 831 is covered with the insulating layer 821. The lower electrode 831 preferably reflects visible light. The upper electrode 835 transmits visible light.

[0049] In addition, the light-emitting portion 804 has a coloring layer 845 that overlaps the light-emitting element 830 and a light-shielding layer 847 that overlaps the insulating layer 821. The coloring layer 845 and the light-shielding layer 847 are covered with an overcoat 849. The space between the light-emitting element 830 and the overcoat 849 is filled with a sealing layer 823.

[0050] The insulating layer 815 has the effect of suppressing the diffusion of impurities into the semiconductor constituting the transistor. In addition, it is preferable to select an insulating layer for the insulating layer 817 that has a planarizing function to reduce surface irregularities caused by the transistor.

[0051] The drive circuit portion 806 has a plurality of transistors on the substrate 801 via the adhesive layer 811 and the insulating layer 813. In FIG. 5(C), one of the transistors included in the drive circuit portion 806 is shown.

[0052] The insulating layer 813 and the substrate 801 are bonded together by the adhesive layer 811. Also, the insulating layer 843 and the substrate 803 are bonded together by the adhesive layer 841. Using a film with low water permeability for the insulating layer 813 or the insulating layer 843 can suppress the intrusion of impurities such as water into the light-emitting element 830 and the transistor 820, which is preferable because it improves the reliability of the light-emitting panel. ​

[0053] The conductive layer 857 is electrically connected to an external input terminal that transmits an external signal (such as a video signal, a clock signal, a start signal, or a reset signal) or a potential to the drive circuit unit 806. Here, an example in which an FPC 808 is provided as the external input terminal is shown. In order to prevent an increase in the number of processes, it is preferable that the conductive layer 857 be formed of the same material and in the same process as the electrodes and wirings used in the light-emitting portion and the drive circuit unit. Here, an example in which the conductive layer 857 is formed of the same material and in the same process as the electrode constituting the transistor 820 is shown. In the light-emitting panel shown in FIG. 5(C), the connector 825 is located on the substrate 803. The connector 825 is connected to the conductive layer 857 through openings provided in the substrate 803, the adhesive layer 841, the insulating layer 843, the sealing layer 823, the insulating layer 817, and the insulating layer 815. Also, the connector 825 is connected to the FPC 808. The FPC 808 and the conductive layer 857 are electrically connected through the connector 825. When the conductive layer 857 and the substrate 803 overlap, the substrate 803 is opened (or a substrate having an opening is used) so that the conductive layer 857, the connector 825, and the FPC 808 can be electrically connected. In the light-emitting panel shown in FIG. 5(C), the connector 825 is located on the substrate 803. The connector 825 is connected to the conductive layer 857 through openings provided in the substrate 803, the adhesive layer 841, the insulating layer 843, the sealing layer 823, the insulating layer 817, and the insulating layer 815. Also, the connector 825 is connected to the FPC 808. The FPC 808 and the conductive layer 857 are electrically connected through the connector 825. When the conductive layer 857 and the substrate 803 overlap, the substrate 803 is opened (or a substrate having an opening is used) so that the conductive layer 857, the connector 825, and the FPC 808 can be electrically connected. In the light-emitting panel shown in FIG. 5(C), the connector 825 is located on the substrate 803. The connector 825 is connected to the conductive layer 857 through openings provided in the substrate 803, the adhesive layer 841, the insulating layer 843, the sealing layer 823, the insulating layer 817, and the insulating layer 815. Also, the connector 825 is connected to the FPC 808. The FPC 808 and the conductive layer 857 are electrically connected through the connector 825. When the conductive layer 857 and the substrate 803 overlap, the substrate 803 is opened (or a substrate having an opening is used) so that the conductive layer 857, the connector 825, and the FPC 808 can be electrically connected. In the light-emitting panel shown in FIG. 5(C), the connector 825 is located on the substrate 803. The connector 825 is connected to the conductive layer 857 through openings provided in the substrate 803, the adhesive layer 841, the insulating layer 843, the sealing layer 823, the insulating layer 817, and the insulating layer 815. Also, the connector 825 is connected to the FPC 808. The FPC 808 and the conductive layer 857 are electrically connected through the connector 825. When the conductive layer 857 and the substrate 803 overlap, the substrate 803 is opened (or a substrate having an opening is used) so that the conductive layer 857, the connector 825, and the FPC 808 can be electrically connected.

[0054] In the light-emitting panel shown in FIG. 5(C), the connector 825 is located on the substrate 803. The connector 825 is connected to the conductive layer 857 through openings provided in the substrate 803, the adhesive layer 841, the insulating layer 843, the sealing layer 823, the insulating layer 817, and the insulating layer 815. Also, the connector 825 is connected to the FPC 808. The FPC 808 and the conductive layer 857 are electrically connected through the connector 825. When the conductive layer 857 and the substrate 803 overlap, the substrate 803 is opened (or a substrate having an opening is used) so that the conductive layer 857, the connector 825, and the FPC 808 can be electrically connected. In the light-emitting panel shown in FIG. 5(C), the connector 825 is located on the substrate 803. The connector 825 is connected to the conductive layer 857 through openings provided in the substrate 803, the adhesive layer 841, the insulating layer 843, the sealing layer 823, the insulating layer 817, and the insulating layer 815. Also, the connector 825 is connected to the FPC 808. The FPC 808 and the conductive layer 857 are electrically connected through the connector 825. When the conductive layer 857 and the substrate 803 overlap, the substrate 803 is opened (or a substrate having an opening is used) so that the conductive layer 857, the connector 825, and the FPC 808 can be electrically connected. In the light-emitting panel shown in FIG. 5(C), the connector 825 is located on the substrate 803. The connector 825 is connected to the conductive layer 857 through openings provided in the substrate 803, the adhesive layer 841, the insulating layer 843, the sealing layer 823, the insulating layer 817, and the insulating layer 815. Also, the connector 825 is connected to the FPC 808. The FPC 808 and the conductive layer 857 are electrically connected through the connector 825. When the conductive layer 857 and the substrate 803 overlap, the substrate 803 is opened (or a substrate having an opening is used) so that the conductive layer 857, the connector 825, and the FPC 808 can be electrically connected. In the light-emitting panel shown in FIG. 5(C), the connector 825 is located on the substrate 803. The connector 825 is connected to the conductive layer 857 through openings provided in the substrate 803, the adhesive layer 841, the insulating layer 843, the sealing layer 823, the insulating layer 817, and the insulating layer 815. Also, the connector 825 is connected to the FPC 808. The FPC 808 and the conductive layer 857 are electrically connected through the connector 825. When the conductive layer 857 and the substrate 803 overlap, the substrate 803 is opened (or a substrate having an opening is used) so that the conductive layer 857, the connector 825, and the FPC 808 can be electrically connected. In the light-emitting panel shown in FIG. 5(C), the connector 825 is located on the substrate 803. The connector 825 is connected to the conductive layer 857 through openings provided in the substrate 803, the adhesive layer 841, the insulating layer 843, the sealing layer 823, the insulating layer 817, and the insulating layer 815. Also, the connector 825 is connected to the FPC 808. The FPC 808 and the conductive layer 857 are electrically connected through the connector 825. When the conductive layer 857 and the substrate 803 overlap, the substrate 803 is opened (or a substrate having an opening is used) so that the conductive layer 857, the connector 825, and the FPC 808 can be electrically connected. In the light-emitting panel shown in FIG. 5(C), the connector 825 is located on the substrate 803. The connector 825 is connected to the conductive layer 857 through openings provided in the substrate 803, the adhesive layer 841, the insulating layer 843, the sealing layer 823, the insulating layer 817, and the insulating layer 815. Also, the connector 825 is connected to the FPC 808. The FPC 808 and the conductive layer 857 are electrically connected through the connector 825. When the conductive layer 857 and the substrate 803 overlap, the substrate 803 is opened (or a substrate having an opening is used) so that the conductive layer 857, the connector 825, and the FPC 808 can be electrically connected. In the light-emitting panel shown in FIG. 5(C), the connector 825 is located on the substrate 803. The connector 825 is connected to the conductive layer 857 through openings provided in the substrate 803, the adhesive layer 841, the insulating layer 843, the sealing layer 823, the insulating layer 817, and the insulating layer 815. Also, the connector 825 is connected to the FPC 808. The FPC 808 and the conductive layer 857 are electrically connected through the connector 825. When the conductive layer 857 and the substrate 803 overlap, the substrate 803 is opened (or a substrate having an opening is used) so that the conductive layer 857, the connector 825, and the FPC 808 can be electrically connected.

[0055] In Specific Example 1, an insulating layer 813, a transistor 820, and a light-emitting element 830 are fabricated on a highly heat-resistant fabrication substrate, the fabrication substrate is peeled off, and the insulating layer 813, the transistor 820, and the light-emitting element 830 are transferred onto the substrate 801 using the adhesive layer 811, thereby showing a light-emitting panel that can be fabricated. Also, in Specific Example 1, an insulating layer 843, a coloring layer 845, and a light-shielding layer 847 are fabricated on a highly heat-resistant fabrication substrate, the fabrication substrate is peeled off, and the insulating layer 843, the coloring layer 845, and the light-shielding layer 847 are transferred onto the substrate 803 using the adhesive layer 841. In Specific Example 1, an insulating layer 813, a transistor 820, and a light-emitting element 830 are fabricated on a highly heat-resistant fabrication substrate, the fabrication substrate is peeled off, and the insulating layer 813, the transistor 820, and the light-emitting element 830 are transferred onto the substrate 801 using the adhesive layer 811, thereby showing a light-emitting panel that can be fabricated. Also, in Specific Example 1, an insulating layer 843, a coloring layer 845, and a light-shielding layer 847 are fabricated on a highly heat-resistant fabrication substrate, the fabrication substrate is peeled off, and the insulating layer 843, the coloring layer 845, and the light-shielding layer 847 are transferred onto the substrate 803 using the adhesive layer 841. In Specific Example 1, an insulating layer 813, a transistor 820, and a light-emitting element 830 are fabricated on a highly heat-resistant fabrication substrate, the fabrication substrate is peeled off, and the insulating layer 813, the transistor 820, and the light-emitting element 830 are transferred onto the substrate 801 using the adhesive layer 811, thereby showing a light-emitting panel that can be fabricated. Also, in Specific Example 1, an insulating layer 843, a coloring layer 845, and a light-shielding layer 847 are fabricated on a highly heat-resistant fabrication substrate, the fabrication substrate is peeled off, and the insulating layer 843, the coloring layer 845, and the light-shielding layer 847 are transferred onto the substrate 803 using the adhesive layer 841. In Specific Example 1, an insulating layer 813, a transistor 820, and a light-emitting element 830 are fabricated on a highly heat-resistant fabrication substrate, the fabrication substrate is peeled off, and the insulating layer 813, the transistor 820, and the light-emitting element 830 are transferred onto the substrate 801 using the adhesive layer 811, thereby showing a light-emitting panel that can be fabricated. Also, in Specific Example 1, an insulating layer 843, a coloring layer 845, and a light-shielding layer 847 are fabricated on a highly heat-resistant fabrication substrate, the fabrication substrate is peeled off, and the insulating layer 843, the coloring layer 845, and the light-shielding layer 847 are transferred onto the substrate 803 using the adhesive layer 841. In Specific Example 1, an insulating layer 813, a transistor 820, and a light-emitting element 830 are fabricated on a highly heat-resistant fabrication substrate, the fabrication substrate is peeled off, and the insulating layer 813, the transistor 820, and the light-emitting element 830 are transferred onto the substrate 801 using the adhesive layer 811, thereby showing a light-emitting panel that can be fabricated. Also, in Specific Example 1, an insulating layer 843, a coloring layer 845, and a light-shielding layer 847 are fabricated on a highly heat-resistant fabrication substrate, the fabrication substrate is peeled off, and the insulating layer 843, the coloring layer 845, and the light-shielding layer 847 are transferred onto the substrate 803 using the adhesive layer 841. A light-emitting panel that can be manufactured by transposing an insulating layer 843, a coloring layer 845, and a light-shielding layer 847 is shown.

[0056] When a material with low heat resistance (such as resin) is used for the substrate, it is difficult to apply high temperature to the substrate during the manufacturing process, so there are limitations on the conditions for manufacturing transistors and insulating layers on the substrate. Also, when a material with high water permeability (such as resin) is used for the substrate, it is preferable to apply high temperature to form a film with low water permeability. In the manufacturing method of this embodiment, since transistors and the like can be manufactured on a manufacturing substrate with high heat resistance, high temperature can be applied to form highly reliable transistors and a film with sufficiently low water permeability. And by transposing them onto the substrate 801 or the substrate 803, a highly reliable light-emitting panel can be manufactured. Thereby, in one aspect of the present invention, a lightweight or thin and highly reliable light-emitting panel can be realized. Details of the manufacturing method will be described later.

[0057] <Specific Example 2> A plan view of the light-emitting panel is shown in FIG. 5(B), and an example of a cross-sectional view between the dashed-dotted lines A3 - A4 in FIG. 5(B) is shown in FIG. 5(D). The light-emitting panel shown in Specific Example 2 is a top-emission type light-emitting panel using a color filter method, which is different from Specific Example 1. Here, only the points different from Specific Example 1 will be described in detail, and the points common to Specific Example 1 will be omitted from the description.

[0058] The light-emitting panel shown in FIG. 5(D) is different from the light-emitting panel shown in FIG. 5(C) in the following points.

[0059] The light-emitting panel shown in FIG. 5(D) has a spacer 827 on the insulating layer 821. By providing the spacer 827, the distance between the substrate 801 and the substrate 803 can be adjusted.

[0060] In addition, in the light-emitting panel shown in FIG. 5(D), the sizes of the substrates 801 and 803 are different. The connection body 825 is located on the insulating layer 843 and does not overlap with the substrate 803. The connection body 825 is electrically connected to the conductive layer 857 through openings provided in the insulating layer 843, the sealing layer 823, the insulating layer 817, and the insulating layer 815. Since there is no need to provide an opening in the substrate 803, the material of the substrate 803 is not restricted.

[0061] <Specific Example 3> FIG. 6(A) shows a plan view of a light-emitting panel, and FIG. 6(C) shows an example of a cross-sectional view between the dashed-dotted lines A5-A6 in FIG. 6(A). The light-emitting panel shown in Specific Example 3 is a top-emission type light-emitting panel using a painting method.

[0062] The light-emitting panel shown in FIG. 6(A) includes a light-emitting portion 804, a drive circuit portion 806, and an FPC 808. The light-emitting elements and transistors included in the light-emitting portion 804 and the drive circuit portion 806 are sealed by the substrate 80 1, the substrate 803, the frame-shaped sealing layer 824, and the sealing layer 823.

[0063] The light-emitting panel shown in FIG. 6(C) includes a substrate 801, an adhesive layer 811, an insulating layer 813, a plurality of transistors, a conductive layer 857, an insulating layer 815, an insulating layer 817, a plurality of light-emitting elements, an insulating layer 82 1, a sealing layer 823, a frame-shaped sealing layer 824, and a substrate 803. The sealing layer 823 and the substrate 803 transmit visible light.

[0064] The frame-shaped sealing layer 824 is preferably a layer having a higher gas barrier property than the sealing layer 823. Thereby, it is possible to suppress moisture and oxygen from entering the light-emitting panel from the outside. Therefore, ​​​​​​​​Thus, a highly reliable light-emitting panel can be realized. Further, the sealing layer 824 and the sealing layer 823 have a waterproof and dustproof effect.

[0065] In Specific Example 3, the light emitted from the light-emitting element 830 is extracted from the light-emitting panel through the sealing layer 823. Therefore, it is preferable that the sealing layer 823 has higher translucency than the frame-shaped sealing layer 824. Further, it is preferable that the sealing layer 823 has a higher refractive index than the frame-shaped sealing layer 824. Further, it is preferable that the sealing layer 823 has a smaller volume shrinkage during curing than the frame-shaped sealing layer 824.

[0066] The light-emitting portion 804 has a transistor 820 and a light-emitting element 830 on the substrate 801 through an adhesive layer 811 and an insulating layer 813. The light-emitting element 830 has a lower electrode 83 1 on the insulating layer 817, an EL layer 833 on the lower electrode 831, and an upper electrode 835 on the EL layer 833. The lower electrode 831 is electrically connected to the source electrode or the drain electrode of the transistor 820. The end portion of the lower electrode 831 is covered with the insulating layer 821. The lower electrode 831 preferably reflects visible light. The upper electrode 835 transmits visible light.

[0067] The drive circuit portion 806 has a plurality of transistors on the substrate 801 through an adhesive layer 811 and an insulating layer 813. In FIG. 6(C), one of the transistors included in the drive circuit portion 806 is shown.

[0068] The insulating layer 813 and the substrate 801 are bonded together by an adhesive layer 811. When a film with low water permeability is used for the insulating layer 813, it is possible to suppress the intrusion of impurities such as water into the light-emitting element 830 and the transistor 820, which is preferable because the reliability of the light-emitting panel is improved. ​

[0069] The conductive layer 857 is electrically connected to an external input terminal that transmits an external signal or potential to the drive circuit unit 806. Here, an example in which an FPC 808 is provided as the external input terminal is shown. Also, here, an example is shown in which the conductive layer 857 is made of the same material as the electrodes constituting the transistor 820 and is fabricated in the same process. In the light-emitting panel shown in FIG. 6(C), the connector 825 is located on the substrate 803. The connector 825 is connected to the conductive layer 857 through openings provided in the substrate 803, the sealing layer 823, the insulating layer 817, and the insulating layer 815. Also, the connector 825 is connected to the FPC 808. The FPC 808 and the conductive layer 857 are electrically connected through the connector 825.

[0070]

[0071] In Specific Example 3, an insulating layer 813, a transistor 820, and a light-emitting element 830 are fabricated on a highly heat-resistant fabrication substrate, the fabrication substrate is peeled off, and the insulating layer 813, the transistor 820, and the light-emitting element 830 are transferred onto the substrate 801 using the adhesive layer 811, thereby showing a light-emitting panel that can be fabricated. Since transistors and the like can be fabricated on a highly heat-resistant fabrication substrate, a highly reliable transistor and a film with sufficiently low water permeability can be formed by applying high temperature. Then, by transferring them onto the substrate 801, a highly reliable light-emitting panel can be fabricated. Thus, in one aspect of the present invention, a lightweight or thin and highly reliable light-emitting panel can be realized.

[0072] <Specific Example 4> FIG. 6(B) shows a plan view of the light-emitting panel, and between the dashed-dotted lines A7 - A8 in FIG. 6(B) An example of a cross-sectional view is shown in Fig. 6(D). The light-emitting panel shown in Specific Example 4 is a bottom-emission type light-emitting panel using the color filter method.

[0073] The light-emitting panel shown in Fig. 6(D) includes a substrate 801, an adhesive layer 811, an insulating layer 813, a plurality of transistors, a conductive layer 857, an insulating layer 815, a coloring layer 845, an insulating layer 817a, an insulating layer 81 7b, a conductive layer 816, a plurality of light-emitting elements, an insulating layer 821, a sealing layer 823, and a substrate 803. The substrate 801, the adhesive layer 811, the insulating layer 813, the insulating layer 815, the insulating layer 817a, and the insulating layer 817b transmit visible light.

[0074] The light-emitting portion 804 has a transistor 820, a transistor 822, and a light-emitting element 830 on the substrate 801 via the adhesive layer 811 and the insulating layer 813. The light-emitting element 830 includes a lower electrode 831 on the insulating layer 817, an EL layer 833 on the lower electrode 831, and an upper electrode 835 on the EL layer 833. The lower electrode 831 is electrically connected to the source electrode or the drain electrode of the transistor 820. The end portion of the lower electrode 831 is covered with the insulating layer 821. It is preferable that the upper electrode 835 reflects visible light. The lower electrode 831 transmits visible light. The position where the coloring layer 845 overlapping the light-emitting element 830 is provided is not particularly limited, and for example, it may be provided between the insulating layer 817a and the insulating layer 817b, between the insulating layer 815 and the insulating layer 817a, etc.

[0075] The drive circuit portion 806 has a plurality of transistors on the substrate 801 via the adhesive layer 811 and the insulating layer 813. In Fig. 6(C), two transistors among the transistors included in the drive circuit portion 806 are shown.

[0076] ​​​​​​​​ The insulating layer 813 and the substrate 801 are bonded together by an adhesive layer 811. The insulating layer 813 If a film with low water permeability is used for the insulating layer 813, impurities such as water can be prevented from entering the light-emitting element 830, the transistors 820 and 822, which is preferable because the reliability of the light-emitting panel is improved.

[0077] The conductive layer 857 is electrically connected to an external input terminal that transmits an external signal or potential to the drive circuit section 806. Here, an example in which an FPC 808 is provided as the external input terminal is shown. Also, here, an example in which the conductive layer 857 is formed of the same material and in the same process as the conductive layer 816 is shown.

[0078] In Specific Example 4, the insulating layer 813, the transistors 820, the light-emitting element 830, etc. are fabricated on a fabrication substrate with high heat resistance, the fabrication substrate is peeled off, and the insulating layer 813, the transistors 820, the light-emitting element 830, etc. are transposed onto the substrate 801 using the adhesive layer 811, thereby fabricating a light-emitting panel. Since transistors and the like can be fabricated on a fabrication substrate with high heat resistance, high temperatures can be applied to form highly reliable transistors and a film with sufficiently low water permeability. Then, by transposing them onto the substrate 801, a highly reliable light-emitting panel can be fabricated. Thus, in one aspect of the present invention, a lightweight or thin and highly reliable light-emitting panel can be realized.

[0079] <Specific Example 5> FIG. 6(E) shows an example of a light-emitting panel different from Specific Examples 1, 2, 3, and 4.

[0080] The light-emitting panel shown in FIG. 6(E) includes a substrate 801, an adhesive layer 811, an insulating layer 813, a conductive layer 814, a conductive layer 857a, a conductive layer 857b, a light-emitting element 830, an insulating layer 821, and a sealing layer 823. ​ and has a substrate 803.

[0081] The conductive layers 857a and 857b are external connection electrodes of the light-emitting panel and can be electrically connected to an FPC or the like. It can be electrically connected.

[0082] The light-emitting element 830 has a lower electrode 831, an EL layer 833, and an upper electrode 835. The end of the lower electrode 831 is covered with an insulating layer 821. The light-emitting element 830 is of a bottom emission type, a top emission type, or a dual emission type. The electrodes, the substrate, the insulating layer, etc. on the light extraction side are each transmissive to visible light. The conductive layer 814 is electrically connected to the lower electrode 831. The end of the lower electrode 831 is covered with an insulating layer 821. The light-emitting element 830 is of a bottom emission type, a top emission type, or a dual emission type. The electrodes, the substrate, the insulating layer, etc. on the light extraction side are each transmissive to visible light. The conductive layer 814 is electrically connected to the lower electrode 831. The substrate on the light extraction side may have, as a light extraction structure, a hemispherical lens, a microlens array, a film provided with a concavo-convex structure, a light diffusion film, etc. For example, the above lens or film can be adhered onto a resin substrate using an adhesive or the like having the same refractive index as that of the substrate or the lens or film to form a light extraction structure. The substrate on the light extraction side may have, as a light extraction structure, a hemispherical lens, a microlens array, a film provided with a concavo-convex structure, a light diffusion film, etc. For example, the above lens or film can be adhered onto a resin substrate using an adhesive or the like having the same refractive index as that of the substrate or the lens or film to form a light extraction structure. is electrically connected to the lower electrode 831.

[0083] The substrate on the light extraction side may have, as a light extraction structure, a hemispherical lens, a microlens array, a film provided with a concavo-convex structure, a light diffusion film, etc. For example, the above lens or film can be adhered onto a resin substrate using an adhesive or the like having the same refractive index as that of the substrate or the lens or film to form a light extraction structure. The substrate on the light extraction side may have, as a light extraction structure, a hemispherical lens, a microlens array, a film provided with a concavo-convex structure, a light diffusion film, etc. For example, the above lens or film can be adhered onto a resin substrate using an adhesive or the like having the same refractive index as that of the substrate or the lens or film to form a light extraction structure. The substrate on the light extraction side may have, as a light extraction structure, a hemispherical lens, a microlens array, a film provided with a concavo-convex structure, a light diffusion film, etc. For example, the above lens or film can be adhered onto a resin substrate using an adhesive or the like having the same refractive index as that of the substrate or the lens or film to form a light extraction structure. The substrate on the light extraction side may have, as a light extraction structure, a hemispherical lens, a microlens array, a film provided with a concavo-convex structure, a light diffusion film, etc. For example, the above lens or film can be adhered onto a resin substrate using an adhesive or the like having the same refractive index as that of the substrate or the lens or film to form a light extraction structure.

[0084] The conductive layer 814 is not necessarily provided, but it is preferably provided because it can suppress the voltage drop due to the resistance of the lower electrode 831. Also, for the same purpose, a conductive layer electrically connected to the upper electrode 835 may be provided on the insulating layer 821, on the EL layer 833, or on the upper electrode 835, etc. The conductive layer 814 is not necessarily provided, but it is preferably provided because it can suppress the voltage drop due to the resistance of the lower electrode 831. Also, for the same purpose, a conductive layer electrically connected to the upper electrode 835 may be provided on the insulating layer 821, on the EL layer 833, or on the upper electrode 835, etc. The conductive layer 814 is not necessarily provided, but it is preferably provided because it can suppress the voltage drop due to the resistance of the lower electrode 831. Also, for the same purpose, a conductive layer electrically connected to the upper electrode 835 may be provided on the insulating layer 821, on the EL layer 833, or on the upper electrode 835, etc. may be provided.

[0085] The conductive layer 814 is made of a material selected from copper, titanium, tantalum, tungsten, molybdenum, chromium, neodymium, scandium, nickel, aluminum or a material having these as main components. The conductive layer 814 is made of a material selected from copper, titanium, tantalum, tungsten, molybdenum, chromium, neodymium, scandium, nickel, aluminum or a material having these as main components. It can be formed as a single layer or laminated using an alloy material or the like. The film thickness of the conductive layer 814 is , for example, it can be 0.1 μm or more and 3 μm or less, preferably 0.1 μm or more and 0 .5 μm or less.

[0086] When using a paste (such as a silver paste) as the material of the conductive layer that is electrically connected to the upper electrode 835 , the metal constituting the conductive layer becomes granular and aggregates. Therefore, the surface of the conductive layer becomes rough and has many gaps, making it difficult for the EL layer 833 to completely cover the conductive layer, and it is preferable that the electrical connection between the upper electrode and the conductive layer becomes easy.

[0087] In Specific Example 5, an insulating layer 813, a light-emitting element 830, etc. are fabricated on a fabrication substrate with high heat resistance, the fabrication substrate is peeled off, and an insulating layer 813, a light-emitting element 83 0, etc. are transposed onto the substrate 801 using the adhesive layer 811. A light-emitting panel that can be fabricated by applying high temperature to form an insulating layer 813, etc. with sufficiently low water permeability and then transposing it to the substrate 801 is shown. In this way, in one aspect of the present invention, a lightweight or thin and highly reliable light-emitting panel can be realized.

[0088] (Embodiment 3) In this embodiment, the configuration of a bendable touch panel applicable to the display panel of an electronic device according to one aspect of the present invention will be described with reference to FIGS. 7, 8, and 9.

[0089] <Configuration Example 1> FIG. 7(A) is a top view of the touch panel. FIG. 7(B) is a cross-sectional view between the dashed line A-B and the dashed-dotted line C-D in FIG. 7(A). FIG. 7(C) is a cross-sectional view between the dashed-dotted line E-F in FIG. 7(A).

[0090] As shown in FIG. 7(A), the touch panel 390 has a display unit 301.

[0091] The display unit 301 includes a plurality of pixels 302 and a plurality of imaging pixels 308. The imaging pixel 308 can detect a finger or the like that touches the display unit 301. Thus, the imaging pixel 308 can be used to form a touch sensor.

[0092] The pixel 302 includes a plurality of sub-pixels (for example, sub-pixel 302R), and the sub-pixel includes a light-emitting element and a pixel circuit that can supply power to drive the light-emitting element.

[0093] The pixel circuit is electrically connected to a wiring that can supply a selection signal and a wiring that can supply an image signal.

[0094] Also, the touch panel 390 includes a scanning line driving circuit 303g(1) that can supply a selection signal to the pixel 302 and an image signal line driving circuit 303s(1) that can supply an image signal to the pixel 302.

[0095] The imaging pixel 308 includes a photoelectric conversion element and an imaging pixel circuit that drives the photoelectric conversion element.

[0096] The imaging pixel circuit is electrically connected to a wiring that can supply a control signal and a wiring that can supply a power supply potential.

[0097] Examples of the control signal include a signal that can select an imaging pixel circuit for reading a recorded imaging signal, a signal that can initialize the imaging pixel circuit, and a signal that can determine the time for which the imaging pixel circuit detects light.

[0098] ​​​​​​The touch panel 390 includes an imaging pixel driving circuit 303g(2) that can supply a control signal to the imaging pixels 308, and an imaging signal line driving circuit 303s(2) that reads out imaging signals. .

[0099] As shown in FIG. 7(B), the touch panel 390 has a substrate 510 and a substrate 570 facing the substrate 510.

[0100] Materials having flexibility can be suitably used for the substrate 510 and the substrate 570.

[0101] Materials with suppressed impurity transmission can be suitably used for the substrate 510 and the substrate 570. For example, materials with a water vapor transmission rate of 10 g / m -5 ·day or less, preferably 10 2 g / -6 g / m 2 ·day or less can be suitably used.

[0102] Materials with approximately equal linear expansion coefficients can be suitably used for the substrate 510 and the substrate 570. For example, materials with a linear expansion coefficient of 1×10 -3 / K or less, preferably 5×10 -5 / K or less, more preferably 1×10 -5 / K or less can be suitably used.

[0103] The substrate 510 is a laminate in which a base material 510b, an insulating layer 510a that prevents the diffusion of impurities into the light-emitting element, and an adhesive layer 510c that bonds the base material 510b and the insulating layer 510a are laminated. .

[0104] The substrate 570 is a laminate of a flexible substrate 570b, an insulating layer 570a that prevents the diffusion of impurities into the light-emitting element, and an adhesive layer 570c that bonds the flexible substrate 570b and the insulating layer 570a. ​

[0105] For example, materials containing resins having polyester, polyolefin, polyamide (nylon, aramid, etc.), poly imide, polycarbonate or acrylic, urethane, epoxy or siloxane bonds can be used for the adhesive layer.

[0106] The sealing layer 560 bonds the substrate 570 and the substrate 510 together. The sealing layer 560 has a refractive index greater than that of air. Also, when extracting light to the sealing layer 560 side, the sealing layer 560 has the function of optical bonding. The pixel circuit and the light-emitting element (e.g., the first light-emitting element 350R) are between the substrate 510 and the substrate 570.

[0107] The pixel 302 has sub-pixels 302R, 302G, and 302B (FIG. 7( C)). Also, the sub-pixel 302R includes a pixel circuit including the first light-emitting element 350R and a transistor 302t capable of supplying power to the first light-emitting element 350R (FIG. 7(B)).

[0108] For example, the sub-pixel 302R includes a pixel circuit including the first light-emitting element 350R and a transistor 302t capable of supplying power to the first light-emitting element 350R (FIG. 7(B)). Also, the light-emitting module 380R includes the first light-emitting element 350R and an optical element (e.g., a coloring layer 3 67R).

[0109] The light-emitting element 350R has a first lower electrode 351R, an upper electrode 352, and an EL layer 353 between the first lower electrode 351R and the upper electrode 352 (FIG. 7(C)).

[0110] The EL layer 353 includes a first EL layer 353a, a second EL layer 353b, and the first EL layer 3 It includes an intermediate layer 354 between 53a and the second EL layer 353b.

[0111] The light-emitting module 380R has a first coloring layer 367R on the substrate 570. The coloring layer may be any that transmits light having a specific wavelength, for example, one that selectively transmits light presenting red, green, blue, etc. Or, a region that transmits the light emitted by the light-emitting element as it is may be provided. For example, the light-emitting module 380R has a first light-emitting element 350R and a sealing layer 360 in contact with the first coloring layer 367R. The first coloring layer 367R is located at a position overlapping the first light-emitting element 350R. Thereby, a part of the light emitted by the light-emitting element 350R passes through the sealing layer 360 having the function of optical bonding and the first coloring layer 367R, and is emitted to the outside of the light-emitting module 380R as shown by the arrow in the figure.

[0112]

[0113]

[0114] The touch panel 390 has a light-shielding layer 367BM on the substrate 570. The light-shielding layer 367BM is provided so as to surround the coloring layer (for example, the first coloring layer 367R).

[0115] The touch panel 390 is provided with an antireflection layer 367p at a position overlapping the display unit 301. As the antireflection layer 367p, for example, a circularly polarized plate can be used.

[0116] The touch panel 390 includes an insulating layer 321. The insulating layer 321 covers the transistor 302t. Note that the insulating layer 321 can be used as a layer for flattening the unevenness caused by the pixel circuit. Also, it can suppress the diffusion of impurities to the transistor 302t, etc. ​​​​​​​​​​​The insulating layer with the layer that can be formed can be applied to the insulating layer 321.

[0117] The touch panel 390 has a light-emitting element (for example, the first light-emitting element 350R) on the insulating layer 321. It has.

[0118] The touch panel 390 has a partition wall 328 that overlaps the end of the first lower electrode 351R on the insulating layer 3 21. Further, a spacer 329 for controlling the distance between the substrate 510 and the substrate 570 is provided on the partition wall 328. It has.

[0119] The image signal line driving circuit 303s(1) includes a transistor 303t and a capacitor 303c. Note that the driving circuit can be formed on the same substrate in the same process as the pixel circuit. As shown in FIG. 7( B), the transistor 303t may have a second gate 304 on the insulating layer 321. The second gate 304 may be electrically connected to the gate of the transistor 303t, or different potentials may be applied to them. Further, if necessary, the second gate 304 may be provided in the transistor 308t, the transistor 302t, etc. It may be.

[0120] The imaging pixel 308 includes a photoelectric conversion element 308p and an imaging pixel circuit for detecting the light irradiated to the photoelectric conversion element 308p. Further, the imaging pixel circuit includes a transistor 308t. It includes. It includes.

[0121] For example, a pin-type photodiode can be used as the photoelectric conversion element 308p.

[0122] The touch panel 390 includes a wiring 311 that can supply signals, and a terminal 319 is provided on the wiring 311. Note that signals such as an image signal and a synchronization signal can be supplied. It is. The FPC 309(1) is electrically connected to the terminal 319. 1) may have a printed wiring board (PWB) attached.

[0123] The transistors formed in the same process are transistor 302t, transistor 303 t, transistor 308t, and the like.

[0124] In addition to the gate, source, and drain of the transistor, each element constituting the touch panel Materials that can be used for the seed wiring and electrodes include aluminum, titanium, chromium, and nickel. Nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, or tungsten The metals used are aluminum, etc., or alloys containing these metals as the main components, in a single-layer structure or a multi-layer structure. For example, a single layer structure of an aluminum film containing silicon, a titanium film on which an aluminum film is laminated, A two-layer structure with an aluminum film laminated on a tungsten film, a two-layer structure with a copper-magnesium film laminated on a tungsten film, - Two-layer structure with copper film laminated on aluminum alloy film, two-layer structure with copper film laminated on titanium film A two-layer structure in which a copper film is laminated on a tungsten film, a titanium film or titanium nitride film and its titanium nitride film are laminated on a tungsten film, An aluminum film or a copper film is laminated on the titanium film or the titanium nitride film, and then a titanium film or a copper film is laminated on the aluminum film or the copper film. A three-layer structure in which a titanium film or a titanium nitride film is formed, a molybdenum film or a molybdenum nitride film, and An aluminum film or a copper film is laminated on the molybdenum film or the molybdenum nitride film, and further There are three-layer structures, such as a molybdenum film or a molybdenum nitride film formed on the oxide film. A transparent conductive material containing indium, tin oxide, or zinc oxide may be used. The use of copper containing metal is preferable because it improves the controllability of the shape by etching.

[0125] <Configuration Example 2> Figures 8(A) and (B) are perspective views of the touch panel 505. For clarity, representative components are shown. Figure 9 is a cross-sectional view taken between the dashed-dotted lines X1-X2 shown in Figure 8(A).

[0126] The touch panel 505 includes a display unit 501 and a touch sensor 595 (Figure 8(B)). Further, the touch panel 505 has a substrate 510, a substrate 570, and a substrate 590. Note that the substrate 510, the substrate 570, and the substrate 590 all have flexibility.

[0127] The display unit 501 includes a substrate 510, a plurality of pixels on the substrate 510, and a plurality of wirings 511 capable of supplying signals to the pixels. The plurality of wirings 511 are routed to the outer peripheral portion of the substrate 510, and a part of them constitutes a terminal 519. The terminal 519 is electrically connected to the FPC 509(1 ).

[0128] The substrate 590 includes a touch sensor 595 and a plurality of wirings 598 electrically connected to the touch sensor 595. The plurality of wirings 598 are routed to the outer peripheral portion of the substrate 590, and a part of them constitutes a terminal. And the terminal is electrically connected to the FPC 509(2). Note that

[0129] in Figure 8(B), for clarity, the electrodes and wirings of the touch sensor 595 provided on the back side (substrate 510 side) of the substrate 590 are shown by solid lines.

[0130] As the touch sensor 595, for example, a capacitance type touch sensor can be applied. As the capacitance method, there are a surface capacitance method, a projected capacitance method, etc.

[0130] As the projected capacitance method, mainly due to the difference in the driving method, there are a self-capacitance method and a mutual-capacitance method. There is a door. Using the mutual capacitance method enables simultaneous multi-point detection, which is preferable.

[0131] Hereinafter, the case of applying a projection-type capacitance touch sensor will be described with reference to FIG. 8(B). using.

[0132] Note that various sensors capable of detecting the proximity or contact of a detection target such as a finger can be applied.

[0133] The projection-type capacitance touch sensor 595 has an electrode 591 and an electrode 592. The electrode 591 is electrically connected to any one of a plurality of wirings 598, and the electrode 592 is electrically connected to any one of the other of the plurality of wirings 598. connect.

[0134] As shown in FIGS. 8(A) and (B), the electrode 592 has a shape in which a plurality of quadrilaterals repeatedly arranged in one direction are connected at the corners.

[0135] The electrode 591 is quadrilateral and is repeatedly arranged in a direction intersecting the direction in which the electrode 592 extends. arranged.

[0136] The wiring 594 electrically connects two electrodes 591 sandwiching the electrode 592. At this time, a shape in which the area of the intersection portion of the electrode 592 and the wiring 594 is as small as possible is preferable. Thereby The area of the region where no electrode is provided can be reduced, and unevenness in transmittance can be reduced. As a result, the luminance unevenness of the light transmitted through the touch sensor 595 can be reduced. result.

[0137] Note that the shapes of the electrodes 591 and 592 are not limited to this, and various shapes can be adopted. For example a plurality of electrodes 591 are arranged so that gaps are not generated as much as possible, and the electrodes 5 are provided via an insulating layer. 92 may be provided in a plurality of spaced-apart configurations so as to create a region that does not overlap with the electrode 591. In this case, it is preferable to provide a dummy electrode that is electrically insulated from these between two adjacent electrodes 592, because it is possible to reduce the area of regions with different transmittance.

[0138] The touch sensor 595 includes a substrate 590, electrodes 591 arranged in a staggered pattern on the substrate 590, electrodes 592, an insulating layer 593 covering the electrodes 591 and the electrodes 592, and wiring 594 that electrically connects adjacent electrodes 591.

[0139] The adhesive layer 597 bonds the substrate 590 to the substrate 570 so that the touch sensor 595 overlaps the display unit 501.

[0140] The electrodes 591 and 592 are formed using a conductive material having translucency. As the conductive material having translucency, conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, and zinc oxide added with gallium can be used. In addition, a film containing graphene can also be used. The film containing graphene can be formed, for example, by reducing a film containing graphene oxide formed in a film shape. Examples of the reduction method include methods such as applying heat. After forming a conductive material having translucency on the substrate 590 by sputtering, unnecessary portions are removed by various patterning techniques such as photolithography to form the electrodes 591 and the electrodes 592.

[0141]

[0142] In addition, as the material used for the insulating layer 593, for example, resins such as acrylic and epoxy, ​​​​​​​In addition to the resin having a siloxane bond, inorganic insulating materials such as silicon oxide, silicon oxynitride, and aluminum oxide can also be used.

[0143] Further, an opening reaching the electrode 591 is provided in the insulating layer 593, and the wiring 594 electrically connects the adjacent electrodes 591. The translucent conductive material can increase the aperture ratio of the touch panel, so it can be suitably used for the wiring 594. Also, a material having higher conductivity than the electrodes 591 and 59 2 can be suitably used for the wiring 594 because it can reduce the electrical resistance.

[0144] One electrode 592 extends in one direction, and a plurality of electrodes 592 are provided in a stripe shape.

[0145] The wiring 594 is provided to intersect the electrode 592.

[0146] A pair of electrodes 591 are provided with one electrode 592 therebetween, and the wiring 594 electrically connects the pair of electrodes 591

[0147] Note that the plurality of electrodes 591 do not necessarily need to be arranged in a direction orthogonal to one electrode 592, and may be arranged at an angle less than 90 degrees.

[0148] One wiring 598 is electrically connected to the electrode 591 or the electrode 592. A part of the wiring 598 functions as a terminal. As the wiring 598, for example, metal materials such as aluminum, gold, platinum, silver , nickel, titanium, tungsten, chromium, molybdenum, iron, cobalt, copper, or palladium and the like, or alloy materials containing the metal materials can be used.

[0149] ​​​​​​In addition, an insulating layer covering the insulating layer 593 and the wiring 594 may be provided to protect the touch sensor 595. This can be done.

[0150] Also, the connection layer 599 electrically connects the wiring 598 and the FPC 509(2).

[0151] As the connection layer 599, various anisotropic conductive films (ACF: Anisotropic Conductive Film) or anisotropic conductive pastes (ACP: Anisotro pic Conductive Paste) can be used.

[0152] The adhesive layer 597 has translucency. For example, a thermosetting resin or an ultraviolet curable resin can be used for this purpose, and specifically, resins such as acrylic, urethane, epoxy, or resins having a siloxane bond can be used.

[0153] The display unit 501 includes a plurality of pixels arranged in a matrix. Each pixel includes a display element and a pixel circuit that drives the display element.

[0154] In this embodiment, the case where an organic EL element that emits white light is applied as the display element will be described. However, the display element is not limited to this. Instead of the organic EL element, a liquid crystal display element, electrochromic ink, electrofluid (registered trademark), or a display device using an electrophoretic element may be used. For example, organic EL elements having different emission colors may be applied to each sub-pixel so that the color of light emitted for each sub-pixel is different.

[0155] This can be done.

[0156] The substrate 510, the substrate 570, and the sealing layer 560 can have the same configuration as in Configuration Example 1.

[0157] The pixel includes a sub-pixel 502R, and the sub-pixel 502R includes a light-emitting module 580R.

[0158] The sub-pixel 502R includes a pixel circuit including a first light-emitting element 550R and a transistor 502t capable of supplying power to the first light-emitting element 550R. Also, the light-emitting module 580R includes a first light-emitting element 550R and an optical element (e.g., a coloring layer 567R).

[0159] The light-emitting element 550R has a lower electrode, an upper electrode, and an EL layer between the lower electrode and the upper electrode. .

[0160] The light-emitting module 580R has a first coloring layer 567R in the direction of extracting light.

[0161] Also, when the sealing layer 560 is provided on the light-extracting side, the sealing layer 560 is in contact with the first light-emitting element 550R and the first coloring layer 567R.

[0162] The first coloring layer 567R is located at a position overlapping the first light-emitting element 550R. As a result, a part of the light emitted by the light-emitting element 550R passes through the first coloring layer 567R and is emitted to the outside of the light-emitting module 580R in the direction of the arrow shown in the figure.

[0163] The display unit 501 has a light-shielding layer 567BM in the direction of emitting light. The light-shielding layer 567BM is provided so as to surround a coloring layer (e.g., the first coloring layer 567R).

[0164] The display unit 501 includes an antireflection layer 567p at a position overlapping the pixel. As the antireflection layer 567 p, for example, a circular polarizing plate can be used.

[0165] The display unit 501 includes an insulating film 521. The insulating film 521 covers the transistor 502t. It should be noted that the insulating film 521 can be used as a layer for flattening the unevenness caused by the pixel circuit. Moreover, a laminated film including a layer capable of suppressing the diffusion of impurities can be applied to the insulating film 521. Thereby, a decrease in the reliability of the transistor 502t or the like due to the diffusion of impurities can be suppressed.

[0166] The display unit 501 has a light-emitting element (for example, the first light-emitting element 550R) on the insulating film 521.

[0167] The display unit 501 has a partition wall 528 overlapping the end of the first lower electrode on the insulating film 521. Moreover, a spacer for controlling the distance between the substrate 510 and the substrate 570 is provided on the partition wall 528.

[0168] The scanning line driving circuit 503g(1) includes a transistor 503t and a capacitor 503c. In addition, the driving circuit can be formed on the same substrate in the same process as the pixel circuit.

[0169] The display unit 501 includes a wiring 511 capable of supplying a signal, and a terminal 519 is provided on the wiring 511. Note that an FPC509(1) capable of supplying signals such as an image signal and a synchronization signal is electrically connected to the terminal 519.

[0170] Note that a printed wiring board (PWB) may be attached to the FPC509(1).

[0171] The display unit 501 has wirings such as a scanning line, a signal line, and a power supply line. Various conductive films described above can be used for the wirings.

[0172] Note that various transistors can be applied to the display unit 501. A bottom gate type transistor The configuration in the case where the [[unknown]] is applied to the display unit 501 is illustrated in FIGS. 9(A) and (B).

[0173] For example, a semiconductor layer containing an oxide semiconductor, amorphous silicon, etc. can be applied to the transistors 502t and 503t illustrated in FIG. 9(A). It can be applied to the transistors 502t and 503t illustrated in FIG. 9(A).

[0174] For example, a semiconductor layer containing polycrystalline silicon crystallized by a process such as laser annealing can be applied to the transistors 502t and 503t illustrated in FIG. 9(B). It can be applied to the transistors 502t and 503t illustrated in FIG. 9(B).

[0175] Also, the configuration in the case where a top-gate type transistor is applied to the display unit 501 is illustrated in FIG. 9( C).

[0176] For example, a semiconductor layer containing a single crystal silicon film transferred from a polycrystalline silicon or single crystal silicon substrate, etc. can be applied to the transistors 502t and 50 3t illustrated in FIG. 9(C). It can be applied to the transistors 502t and 503t illustrated in FIG. 9(C).

[0177] Note that the present embodiment can be appropriately combined with other embodiments shown in this specification. It can be combined.

[0178] (Embodiment 4) In the present embodiment, the configuration of the input / output device according to one aspect of the present invention will be described with reference to FIGS. 10 and 11. It will be described while referring to FIGS. 10 and 11.

[0179] FIG. 10 is a projection view for explaining the configuration of the input / output device according to one aspect of the present invention.

[0180] FIG. 10(A) is a projection view of the input / output device 500 according to one aspect of the present invention, and FIG. 10(B) is a projection view for explaining the configuration of the detection unit 20U included in the input / output device 500.

[0181] FIG. 11 is a cross-sectional view for explaining the configuration of the input / output device 500 according to one aspect of the present invention.

[0182] FIG. 11(A) is a cross-sectional view taken along Z1-Z2 of the input / output device 500 according to one aspect of the present invention shown in FIG. 10. view.

[0183] Note that the input / output device 500 can also be referred to as a touch panel.

[0184] <Configuration Example 1 of Input / Output Device.> The input / output device 500 described in this embodiment includes a window portion 14 that transmits visible light, and a plurality of detection units 20U arranged in a matrix, a scanning line G1 that is electrically connected to the plurality of detection units 20U arranged in the row direction (indicated by an arrow R in the figure), a signal line DL that is electrically connected to the plurality of detection units 20U arranged in the column direction (indicated by an arrow C in the figure), and a flexible input device 100 including a flexible first substrate 16 that supports the detection units 20U, the scanning line G1, and the signal line DL. The input / output device 500 further includes a display unit 501 including a plurality of pixels 502 arranged in a matrix and overlapping the window portion 14 and a flexible second substrate 510 that supports the pixels 502 (see FIGS. 10(A) to 10(C)). view. (indicated by an arrow R in the figure), and a scanning line G1 that is electrically connected to the plurality of detection units 20U arranged in the row direction. (indicated by an arrow C in the figure), and a signal line DL that is electrically connected to the plurality of detection units 20U arranged in the column direction. electrically, and a flexible first substrate 16 that supports the detection units 20U, the scanning line G1, and the signal line DL. The input / output device 500 further includes a display unit 501 including a plurality of pixels 502 arranged in a matrix and overlapping the window portion 14 and a flexible second substrate 510 that supports the pixels 502 (see FIGS. 10(A) to 10(C)). view. (see FIGS. 10(A) to 10(C)). .

[0185] The detection unit 20U includes a detection element C that overlaps the window portion 14 and a detection circuit 19 that is electrically connected to the detection element C (see FIG. 10(B)). view.

[0186] The detection element C includes an insulating layer 23, a first electrode 21 and a second electrode 22 that sandwich the insulating layer 23. (see FIG. 11(A)).

[0187] The detection circuit 19 is supplied with a selection signal and generates a detection signal D based on a change in the capacitance of the detection element C. Supply ATA.

[0188] The scanning line G1 can supply a selection signal, and the signal line DL can supply a detection signal DATA. The detection circuit 19 is arranged so as to overlap the gaps between the plurality of window portions 14.

[0189] Also, the input / output device 500 described in this embodiment includes a coloring layer between the detection unit 20U and the pixel 502 that overlaps the window portion 14 of the detection unit 20U.

[0190] The input / output device 500 described in this embodiment includes a flexible input device 100 having a plurality of detection units 20U each having a window portion 14 that transmits visible light, and a flexible display unit 501 having a plurality of pixels 502 that overlap the window portion 14, and is configured to include a coloring layer between the window portion 14 and the pixel 502.

[0191] As a result, the input / output device can supply a detection signal based on a change in capacitance and position information of the detection unit that supplies the detection signal, display image information associated with the position information of the detection unit, and can be bent. As a result, a novel input / output device excellent in convenience or reliability can be provided.

[0192] Also, the input / output device 500 may include an FPC1 that is supplied with a signal supplied by the input device 100 and / or an FPC2 that supplies a signal including image information to the display unit 501.

[0193] Also, the input / output device 500 may include a protective layer 17p that prevents the occurrence of scratches and / or an antireflection layer 567p that weakens the intensity of external light reflected by the input / output device 500.

[0194] Further, the input / output device 500 includes a scanning line driving circuit that supplies a selection signal to the scanning lines of the display unit 501 503g, a wiring 511 that supplies signals, and a terminal 519 that is electrically connected to the FPC 2 and has.

[0195] Hereinafter, each element constituting the input / output device 500 will be described. Note that these configurations cannot be clearly separated, and there are cases where one configuration also serves as another configuration or includes a part of another configuration exists.

[0196] For example, the input device 100 having a colored layer at a position overlapping a plurality of window portions 14 is both the input device 10 0 and also a color filter.

[0197] Further, for example, the input / output device 500 in which the input device 100 is overlaid on the display unit 501 is both the input device 100 and also the display unit 501.

[0198] The input / output device 500 includes an input device 100 and a display unit 501 (see Fig. 10(A) ).

[0199] The input device 100 includes a plurality of detection units 20U and a flexible base material 16 that supports the detection units. For example, a plurality of detection units 20U are arranged on the flexible base material 16 in a matrix of 40 rows and 15 columns.

[0200] The window portion 14 transmits visible light.

[0201] A colored layer that transmits light of a predetermined color is provided at a position overlapping the window portion 14. For example, a colored layer CFB that transmits blue light, a colored layer CFG that transmits green light, or a colored layer CFR that transmits red light is provided (see Fig. 10(B)).

[0202] ​In addition to blue, green, and / or red, a colored layer that transmits white light or a colored layer that transmits yellow light, etc., a colored layer that transmits light of various colors can be provided. A colored layer that transmits light of various colors such as a colored layer that transmits yellow light or a colored layer that transmits white light can be provided in addition to blue, green, or / and red.

[0203] A metal material, a pigment, a dye, or the like can be used for the colored layer.

[0204] A light-shielding layer BM is provided so as to surround the window portion 14. The light-shielding layer BM is less likely to transmit light than the window portion 14. It is difficult to transmit light.

[0205] Carbon black, metal oxides, composite oxides containing a solid solution of multiple metal oxides, etc. can be used for the light-shielding layer BM. It can be used for the light-shielding layer BM.

[0206] A scanning line G1, a signal line DL, a wiring VPI, a wiring RES, and a wiring VRES and a detection circuit 19 are provided at a position overlapping the light-shielding layer BM.

[0207] In addition, a light-transmissive overcoat layer that covers the colored layer and the light-shielding layer BM can be provided. It can be provided.

[0208] The detection element C has a first electrode 21, a second electrode 22, and an insulating layer 23 between the first electrode 21 and the second electrode 22 (see FIG. 11(A)). It has an insulating layer 23 between the first electrode 21 and the second electrode 22 (see FIG. 11(A)).

[0209] The first electrode 21 is formed, for example, in an island shape so as to be separated from other regions. In particular, in order for the first electrode 21 not to be recognized by the user of the input / output device 500, a layer that can be manufactured in the same process as the first electrode 21 is preferably arranged close to the first electrode 21. More preferably, the number of window portions 14 arranged in the gap between the first electrode 21 and the layer arranged close to the first electrode 21 is preferably minimized. In particular, a configuration in which the window portion 14 is not arranged in the gap is preferred. Preferably, the number of window portions 14 arranged in the gap between the first electrode 21 and the layer arranged close to the first electrode 21 is minimized. In particular, a configuration in which the window portion 14 is not arranged in the gap is preferred. Preferably, the number of window portions 14 arranged in the gap between the first electrode 21 and the layer arranged close to the first electrode 21 is minimized. In particular, a configuration in which the window portion 14 is not arranged in the gap is preferred. A configuration in which the window portion 14 is not arranged in the gap is preferred.

[0210] Comprises a second electrode 22 so as to overlap with the first electrode 21, and an insulating layer 23 is provided between the first electrode 21 and the second electrode 22 therebetween.

[0211] For example, when an object having a dielectric constant different from that of the atmosphere approaches the first electrode 21 or the second electrode 22 of the detection element C placed in the atmosphere, the capacitance of the detection element C changes. Specifically, when any finger-like object approaches the detection element C, the capacitance of the detection element C changes. Thus, it can be used as a proximity detector. it can be used for a proximity detector.

[0212] For example, the capacitance of the deformable detection element C changes as it deforms.

[0213] Specifically, when a finger or the like touches the detection element C, the distance between the first electrode 21 and the second electrode 22 becomes narrower, and the capacitance of the detection element C increases. Thus, it can be used as a contact detector. it can be used for a contact detector.

[0214] Specifically, by bending the detection element C, the distance between the first electrode 21 and the second electrode 22 becomes narrower. Thus, the capacitance of the detection element C increases. Thus, it can be used as a bending detector. it can be used for a bending detector.

[0215] The first electrode 21 and the second electrode 22 contain a conductive material.

[0216] For example, an inorganic conductive material, an organic conductive material, a metal, or a conductive ceramic can be used for the first electrode 21 and the second electrode 22.

[0217] Specifically, aluminum, chromium, copper, tantalum, titanium, molybdenum, tungsten , a metal element selected from nickel, silver or manganese, an alloy containing the above-described metal element as a component, an alloy or an alloy combining the above-described metal elements can be used.

[0218] Alternatively, a conductive oxide such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, or zinc oxide added with gallium can be used.

[0219] Alternatively, graphene or graphite can be used. The film containing graphene can be formed, for example, by reducing a film containing graphene oxide formed in a film shape. As a reduction method, a method of applying heat or a method of using a reducing agent can be mentioned.

[0220] Alternatively, a conductive polymer can be used.

[0221] The detection circuit 19 includes, for example, transistors M1 to M3. Further, the detection circuit 1 9 includes wiring for supplying a power supply potential and a signal. For example, wiring VPI, wiring CS, scanning line G1, wiring RES, wiring VRES, and signal line DL, etc. are included. Note that the specific configuration of the detection circuit 19 will be described in detail in Embodiment 5.

[0222] Note that the detection circuit 19 may be disposed in a region that does not overlap with the window portion 14. For example, by disposing wiring in a region that does not overlap with the window portion 14, it is possible to easily visually recognize what is on one side of the detection unit 20U from the other side.

[0223] For example, transistors that can be formed in the same process can be used for transistors M1 to M3.

[0224] ​​​​​Transistor M1 has a semiconductor layer. For example, an element of Group 4, a compound semiconductor, or an oxide The semiconductor can be used for the semiconductor layer. Specifically, a semiconductor containing silicon, gallium A semiconductor containing arsenic or an oxide semiconductor containing indium can be applied, etc.

[0225] Note that the configuration of the transistor in which an oxide semiconductor is applied to the semiconductor layer will be described in detail in Embodiment 5. will be described in detail.

[0226] A material having conductivity can be applied to the wiring.

[0227] For example, an inorganic conductive material, an organic conductive material, a metal, or a conductive ceramic can be used for the wiring. Specifically, the same material as that which can be used for the first electrode 21 and the second electrode 22 can be applied. can be applied.

[0228] Metal materials such as aluminum, gold, platinum, silver, nickel, titanium, tungsten, chromium, molybdenum, iron, cobalt, copper, or palladium, and alloy materials containing the metal materials can be used for the scanning line G1, the signal line DL, the wiring VPI, the wiring RES, and the wiring VRES.

[0229] The film formed on the base material 16 may be processed to form the detection circuit 19 on the base material 16.

[0230] Alternatively, the detection circuit 19 formed on another base material may be transferred to the base material 16.

[0231] Note that the manufacturing method of the detection circuit will be described in detail in Embodiment 5.

[0232] An organic material, an inorganic material, or a composite material of an organic material and an inorganic material can be used for the flexible base material 16. can be used.

[0233] A material having a thickness of 5 μm or more and 2500 μm or less, preferably 5 μm or more and 680 μm or less, more preferably 5 μm or more and 170 or less, still more preferably 5 μm or more and 45 μm or less, still more preferably 5 μm or more and 45 μm or less, still more preferably 8 μm or more and 25 μm or less can be used for the base material 1 6.

[0234] In addition, a material with suppressed impurity permeation can be preferably used for the base material 16. For example, a material with a water vapor transmission rate of 10 -5 g / m 2 ·day or less, preferably 10 -6 g / m 2 ·day or less can be preferably used.

[0235] In addition, a material with approximately equal coefficient of linear expansion can be preferably used for the base material 16. For example, the coefficient of linear expansion is 1×10 -3 / K or less, preferably 5×10 -5 / K or less, more preferably 1× 10 -5 / K or less can be preferably used.

[0236] For example, organic materials such as resins, resin films, or plastic films can be used for the base material 16 .

[0237] For example, inorganic materials such as metal plates or thin glass plates with a thickness of 10 μm or more and 50 μm or less can be used for the base material 16.

[0238] For example, a composite material formed by laminating a metal plate, a thin glass plate, or a film of an inorganic material to a resin film using a resin layer can be used for the base material 16.

[0239] For example, fibrous or particulate metals, glasses, or inorganic materials can be used in resins or resin films The composite material dispersed therein can be used for the base material 16.

[0240] For example, a thermosetting resin or an ultraviolet curable resin can be used for the resin layer.

[0241] Specifically, a resin film or a resin plate such as polyester, polyolefin, polyamide, polyimide, polycarbonate or acrylic resin can be used.

[0242] Specifically, non-alkali glass, soda-lime glass, potassium glass or crystal glass etc. can be used.

[0243] Specifically, a metal oxide film, a metal nitride film or a metal oxynitride film etc. can be used thereof. For example, silicon oxide, silicon nitride, silicon oxynitride, alumina film etc. can be applied.

[0244] Specifically, SUS or aluminum etc. provided with an opening can be used.

[0245] Specifically, a resin having an acrylic, urethane, epoxy, or siloxane bond etc. can be used.

[0246] For example, a laminate in which a flexible base material 16b, a barrier film 16a for preventing diffusion of impurities, and a resin layer 16c for laminating the base material 16 b and the barrier film 16a are laminated can be preferably used for the base material 16 (see Fig. 11(A)). Specifically, a film containing a laminated material in which a 600 nm silicon oxynitride film and a 200 nm thick silicon nitride film are laminated can be used for the barrier film 16a.

[0247]

[0248] ​​Specifically, a silicon oxynitride film with a thickness of 600 nm, a silicon nitride film with a thickness of 200 nm, and a silicon oxynitride film with a thickness of 20 0 nm, a silicon nitride oxide film with a thickness of 140 nm, and a silicon oxynitride film with a thickness of 100 nm are used for the barrier film 16a in this order The film containing the laminated material can be used .

[0249] Resin films such as polyester, polyolefin, polyamide, polyimide, polycarbonate, or acrylic resin, resin plates, or laminates can be used for the base material 16b .

[0250] For example, materials containing resins such as polyester, polyolefin, polyamide (nylon, aramid, etc.), polyimide, polycarbonate, or acrylic, urethane, epoxy, or siloxane bonds can be used for the resin layer 16c .

[0251] A flexible protective base material 17 or / and a protective layer 17p can be provided. The flexible protective base material 17 or the protective layer 17p prevents the occurrence of scratches and protects the input device 100

[0252] For example, resin films such as polyester, polyolefin, polyamide, polyimide, polycarbonate, or acrylic resin, resin plates, or laminates can be used for the protective base material 17 .

[0253] For example, a hard coat layer or a ceramic coat layer can be used for the protective layer 17p . Specifically, a layer containing a UV-curable resin or aluminum oxide may be formed at a position overlapping the second electrode 22 .

[0254] The display unit 501 includes a plurality of pixels 502 arranged in a matrix (see Fig. 10(C))​​​ (Note).

[0255] For example, pixel 502 includes sub-pixels 502B, 502G, and 502R, and each sub-pixel includes a display element and a pixel circuit for driving the display element.

[0256] Note that sub-pixel 502B of pixel 502 is disposed at a position overlapping with color filter layer CFB, sub-pixel 50 2G is disposed at a position overlapping with color filter layer CFG, and sub-pixel 502R is disposed at a position overlapping with color filter layer CFR.

[0257] In this embodiment, a case where an organic electroluminescence element that emits white light is applied to a display element will be described, but the display element is not limited thereto.

[0258] For example, organic electroluminescence elements having different emission colors may be applied to each sub-pixel so that the color of light emitted from each sub-pixel is different.

[0259] In addition, in the display unit, an active matrix method in which a pixel has an active element or a passive matrix method in which a pixel does not have an active element can be used.

[0260] In the active matrix method, as the active element (active element, non-linear element), not only a transistor but also various active elements (active elements, non-linear elements) can be used. For example, MIM (Metal Insulator Metal) or TFT D (Thin Film Diode) etc. can also be used. Since these elements have fewer manufacturing steps, it is possible to reduce the manufacturing cost or improve the yield. Or, since these elements have a small element size, the aperture ratio can be improved, It is possible to achieve low power consumption and high brightness.

[0261] As something other than the active matrix method, it is also possible to use a passive matrix type that does not use active elements (active elements, non-linear elements). Since active elements (active elements, non-linear elements) are not used, the manufacturing process is few, so it is possible to reduce the manufacturing cost or improve the yield. Or, since active elements (active elements, non-linear elements) are not used, the aperture ratio can be improved, and low power consumption or high brightness can be achieved.

[0262] A flexible material can be used for the substrate 510. For example, the material that can be used for the base material 16 can be applied to the substrate 510.

[0263] For example, a laminate in which a flexible base material 510b, an insulating layer 510a that prevents diffusion of impurities, and an adhesive layer 510c that bonds the base material 510b and the insulating layer 510a are laminated can be suitably used for the substrate 510 (see Fig. 11(A)).

[0264] The sealing layer 560 bonds the base material 16 and the substrate 510. The sealing layer 560 has a refractive index greater than that of air. Also, when taking out light from the sealing layer 560 side, the sealing layer 560 has an optical bonding function.

[0265] The pixel circuit and the light-emitting element (for example, the light-emitting element 550R) are between the substrate 510 and the base material 16.

[0266] The sub-pixel 502R includes a light-emitting module 580R.

[0267] ​​​​​​​​​The subpixel 502R can supply power to the light-emitting element 550R and the light-emitting element 550R. The light emitting module 580R includes a pixel circuit including a transistor 502t that can emit light. It includes a light element 550R and an optical element (eg, a colored layer CFR).

[0268] The light-emitting element 550R includes a lower electrode, an upper electrode, and a light-emitting organic compound between the lower electrode and the upper electrode. The layer includes a material.

[0269] The light emitting module 580R has a colored layer CFR in the direction in which the light is extracted. Any material that transmits light having a certain wavelength, such as red, green, or blue light, may be used. In addition, the other sub-pixels may be provided with a colored layer. The light emitted by the light-emitting element is emitted without passing through the colored layer. This may be allowed.

[0270] In addition, when the sealing layer 560 is provided on the side from which light is extracted, the sealing layer 560 is It contacts 550R and the colored layer CFR.

[0271] The colored layer CFR is located so as to overlap the light emitting element 550R. A part of the emitted light is transmitted through the colored layer CFR and is emitted to the light emitting module 58 in the direction of the arrow shown in the figure. It is ejected outside 0R.

[0272] A light-shielding layer BM is provided so as to surround a colored layer (for example, colored layer CFR).

[0273] The pixel circuit includes an insulating film 521 that covers a transistor 502t. It can be used as a layer for flattening unevenness caused by pixel circuits. A laminated film including a layer capable of suppressing diffusion can be applied to the insulating film 521. As a result it is possible to suppress a decrease in the reliability of the transistor 502t or the like due to the diffusion of unexpected impurities.

[0274] A lower electrode is disposed on the insulating film 521, and a partition wall 528 is disposed on the insulating film 521 so as to overlap with an end portion of the lower electrode.

[0275] The lower electrode sandwiches a layer containing a light-emitting organic compound between the upper electrode to form a light-emitting element (for example the light-emitting element 550R). The pixel circuit supplies power to the light-emitting element.

[0276] Further, a spacer for controlling the distance between the base material 16 and the substrate 510 is provided on the partition wall 528.

[0277] The scanning line driving circuit 503g(1) includes a transistor 503t and a capacitor 503c. In addition a transistor that can be formed on the same substrate in the same process as the pixel circuit can be used for the driving circuit.

[0278] Various circuits that can convert the detection signal DATA supplied by the detection unit 20U and supply it to the FPC1 can be used for the converter CONV (see FIGS. 10(A) and 11(A)).

[0279] For example, the transistor M4 can be used for the converter CONV.

[0280] <Other configurations> The display unit 501 includes an antireflection layer 567p at a position overlapping the pixel. As the antireflection layer 567p for example, a circularly polarized plate can be used.

[0281] The display unit 501 includes a wiring 511 to which a signal can be supplied, and a terminal 519 is connected to the wiring 51 ​​​​1. In addition, F PC2 is electrically connected to terminal 519.

[0282] In addition, a printed wiring board (PWB) may be attached to the FPC 2.

[0283] The display unit 501 has wiring such as scanning lines, signal lines, and power lines. It can be used.

[0284] Specifically, aluminum, chromium, copper, tantalum, titanium, molybdenum, and tungsten , nickel, yttrium, zirconium, silver or manganese; Use an alloy containing the above-mentioned metal elements or an alloy combining the above-mentioned metal elements. In particular, aluminum, chromium, copper, tantalum, titanium, molybdenum, tantalum It is preferable that the alloy contains one or more elements selected from the group consisting of copper and manganese. Gold is suitable for microfabrication using wet etching techniques.

[0285] Specifically, a two-layer structure in which a titanium film is laminated on an aluminum film, a titanium nitride film on a titanium nitride film, Two-layer structure with a tungsten film laminated on a titanium nitride film, two-layer structure with a tungsten film laminated on a titanium nitride film, A two-layer structure in which a tungsten film is laminated on a titanium film or a tungsten nitride film, a titanium film, A three-layer structure in which an aluminum film is layered on the titanium film, and a titanium film is then formed on top of that. etc. can be used.

[0286] Specifically, titanium, tantalum, tungsten, molybdenum, chromium, etc. are deposited on an aluminum film. , neodymium, scandium, or a combination thereof. A stacked structure in which an alloy film or a nitride film is stacked can be used.

[0287] Alternatively, a light-transmissive conductive material containing indium oxide, tin oxide, or zinc oxide may also be used. Good.

[0288] <Modification Example of Display Unit> Various transistors can be applied to the display unit 501.

[0289] The configuration when applying a bottom-gate type transistor to the display unit 501 is illustrated in FIGS. 11(A) and 11(B).

[0290] For example, a semiconductor layer containing an oxide semiconductor, amorphous silicon, etc. can be applied to the transistors 502t and 503t illustrated in FIG. 11(A). Good.

[0291] For example, a semiconductor layer containing polycrystalline silicon crystallized by a process such as laser annealing can be applied to the transistors 502t and 503t illustrated in FIG. 11(B). Good.

[0292] The configuration when applying a top-gate type transistor to the display unit 501 is illustrated in FIG. 11(C). Good.

[0293] For example, a semiconductor layer containing a single-crystalline silicon film transferred from a polycrystalline silicon or single-crystalline silicon substrate, etc. can be applied to the transistors 502t and 503t illustrated in FIG. 11(C). Good.

[0294] Note that the present embodiment can be appropriately combined with other embodiments shown in this specification. Good.

[0295] (Embodiment 5) In the present embodiment, the configuration and driving method of a detection circuit that can be used in the detection unit of the input / output device according to one aspect of the present invention will be described with reference to FIG. 12.

[0296] FIG. 12 is a diagram for explaining the configuration and driving method of a detection circuit 19 and a converter CONV according to one aspect of the present invention.

[0297] FIG. 12(A) is a circuit diagram for explaining the configuration of a detection circuit 19 and a converter CONV according to one aspect of the present invention, and FIGS. 12(B-1) and 12(B-2) are timing charts for explaining the driving method.

[0298] The detection circuit 19 according to one aspect of the present invention includes a first transistor M1 whose gate is electrically connected to the first electrode 21 of the detection element C, and the first electrode is electrically connected to a wiring VPI that can supply, for example, a ground potential (see FIG. 12(A)).

[0299] Alternatively, it may be configured to include a second transistor M2 whose gate is electrically connected to a scanning line G1 that can supply a selection signal, the first electrode is electrically connected to the second electrode of the first transistor M1, and the second electrode is electrically connected to a signal line DL that can supply, for example, a detection signal DATA.

[0300] Alternatively, it may be configured to include a third transistor M3 whose gate is electrically connected to a wiring RES that can supply a reset signal, the first electrode is electrically connected to the first electrode 21 of the detection element C, and the second electrode is electrically connected to a wiring VRES that can supply, for example, a ground potential.

[0301] The capacitance of the detection element C changes, for example, when an object approaches the first electrode 21 or the second electrode 22, or when the distance between the first electrode 21 and the second electrode 22 changes. Accordingly, the detector 20 can supply a detection signal DATA based on the change in the capacitance of the detection element C.

[0302] In addition, the detector 20 includes a wiring CS that can supply a control signal for controlling the potential of the second electrode of the detection element C.

[0303] Note that a node where the first electrode 21 of the detection element C, the gate of the first transistor M1, and the first electrode of the third transistor are electrically connected is referred to as node A.

[0304] The wiring VRES and the wiring VPI can supply, for example, a ground potential, and the wiring VPO and the wiring BR can supply, for example, a high power supply potential.

[0305] In addition, the wiring RES can supply a reset signal, the scanning line G1 can supply a selection signal, and the wiring CS can supply a control signal for controlling the potential of the second electrode 22 of the detection element.

[0306] In addition, the signal line DL can supply the detection signal DATA, and the terminal OUT can supply a signal converted based on the detection signal DATA.

[0307] Note that various circuits that can convert the detection signal DATA and supply it to the terminal OUT can be used for the converter CONV. For example, by electrically connecting the converter CONV to the detection circuit 19, a source follower circuit or a current mirror circuit may be configured. ​​​​​​​​​​

[0308] Specifically, a source follower circuit can be configured using a converter CONV using transistor M4 (see FIG. 12(A)). Note that a transistor that can be fabricated in the same process as the first transistor M1 to the third transistor M3 may be used as transistor M4. Moreover, transistors M1 to M3 have a semiconductor layer. For example, an element of Group 4, a compound semiconductor, or an oxide semiconductor can be used for the semiconductor layer. Specifically, a semiconductor containing silicon, a semiconductor containing gallium arsenide, or an oxide semiconductor containing indium can be applied. Note that the configuration of a transistor using an oxide semiconductor for the semiconductor layer will be described in detail in Embodiment 5.

[0309]

[0310]

[0311] <Driving Method of Detection Circuit 19>The driving method of detection circuit 19 will be described. <First Step>In the first step, after turning on the third transistor, a reset signal that turns it off is supplied to the gate to set the potential of the first electrode of detection element C to a predetermined potential (see FIG. 12(B-1), period T1).

[0312] Specifically, the reset signal is supplied to wiring RES. The third transistor to which the reset signal is supplied sets the potential of node A to, for example, the ground potential (see FIG. 12(A)).

[0313] <Second Step>In the second step, a selection signal that turns on the second transistor M2 is supplied to the gate, and the second electrode of the first transistor is electrically connected to signal line DL. ​

[0314] Specifically, a selection signal is supplied to the scanning line G1. The second transistor M2 to which the selection signal is supplied electrically connects the second electrode of the first transistor to the signal line DL (see Fig. 12 (B-1) period T2).

[0315] 《The Third Step》In the third step, a control signal is supplied to the second electrode of the sensing element , and the potential that changes based on the control signal and the capacitance of the sensing element C is supplied to the gate of the first transistor M1.

[0316] Specifically, a rectangular control signal is supplied to the wiring CS. The sensing element C to which the rectangular control signal is supplied to the second electrode 22 raises the potential of the node A based on the capacitance of the sensing element C (see the second half of the period T2 in Fig. 12 (B-1)).

[0317] For example, when the sensing element is placed in the air, if something with a higher dielectric constant than the air is placed close to the second electrode 22 of the sensing element C, the capacitance of the sensing element C appears to increase .

[0318] As a result, the change in the potential of the node A caused by the rectangular control signal becomes smaller than when something with a higher dielectric constant than the air is not placed close by (see the solid line in Fig. 12 (B-2)) .

[0319] 《The Fourth Step》In the fourth step, the signal brought about by the change in the potential of the gate of the first transistor M1 is supplied to the signal line DL.

[0320] For example, the change in current brought about by the change in the potential of the gate of the first transistor M1 is supplied to the signal line D L. ​​

[0321] The converter CONV converts the change in the current flowing through the signal line DL into a change in voltage and supplies it.

[0322] 《Fifth Step》In the fifth step, a selection signal for turning off the second transistor is supplied to the gate.

[0323] Note that the content described in one embodiment (even part of the content) can be applied, combined, or replaced with the content described in another part (even part of the content) described in that embodiment, and / or the content described in one or more other embodiments (even part of the content).

[0324] Note that the content described in the embodiments refers to the content described using various figures in each embodiment, or the content described using the text described in the specification.

[0325] Note that the figure (even part of it) described in one embodiment can be combined with another part of that figure, another figure (even part of it) described in that embodiment, and / or the figure (even part of it) described in one or more other embodiments to form more figures.

[0326] Note that for the content not defined in the drawings and text in the specification, one aspect of the invention excluding that content can be constituted. Or, for a certain value, when a numerical range indicated by an upper limit value and a lower limit value, etc. is described, by arbitrarily narrowing that range, or by excluding a point within that range, one aspect of the invention excluding part of that range can be defined. ​​​​​​​​​​​This can be done. By these, for example, it can be defined that the prior art is not within the technical scope of an aspect of the present invention. It can be defined that it does not fall within.

[0327] As a specific example, assume that a circuit diagram using first to fifth transistors is described in a certain circuit. In that case, it is possible to define that the circuit does not have a sixth transistor as an invention. Or, it is possible to define that the circuit does not have a capacitive element. Further, it is possible to configure an invention by defining that the circuit does not have a sixth transistor having a certain specific connection structure. Or, it is possible to configure an invention by defining that the circuit does not have a capacitive element having a certain specific connection structure. For example, it is possible to define an invention as not having a sixth transistor whose gate is connected to the gate of the third transistor. Or, for example, it is possible to define an invention as not having a capacitive element whose first electrode is connected to the gate of the third transistor. Or, it is possible to configure an invention by defining that the circuit does not have a capacitive element having a certain specific connection structure. For example, it is possible to define an invention as not having a sixth transistor whose gate is connected to the gate of the third transistor. Or, for example, it is possible to define an invention as not having a capacitive element whose first electrode is connected to the gate of the third transistor.

[0328] As another specific example, for a certain value, for example, assume that it is described that "it is preferable that a certain voltage is 3V or more and 10V or less". In that case, for example, it is possible to define an aspect of the invention as excluding the case where a certain voltage is -2V or more and 1V or less. Or, for example, it is possible to define an aspect of the invention as excluding the case where a certain voltage is 13V or more. Incidentally, for example, it is also possible to define the invention as the voltage being 5V or more and 8V or less. Incidentally, for example, it is also possible to define the invention as the voltage being approximately 9V. Or, for example, it is possible to define an aspect of the invention as excluding the case where a certain voltage is 13V or more. Incidentally, for example, it is also possible to define the invention as the voltage being 5V or more and 8V or less. ​​​​​​​There is. For example, although the voltage is 3V or more and 10V or less, it excludes the case where it is 9V. It is also possible to define the invention. Regarding a certain value, even if it is described as "such a range is preferred", "it is preferable to satisfy these", etc. A certain value is not limited by those descriptions. That is, even if it is described as "preferred", "preferable", etc. It is not necessarily limited by those descriptions.

[0329] As another specific example, regarding a certain value, for example, it is described that "a certain voltage is preferably 10V". In that case, for example, one aspect of the invention can be defined as excluding the case where a certain voltage is -2V or more and 1V or less. Or, for example, one aspect of the invention can be defined as excluding the case where a certain voltage is 13V or more.

[0330] As another specific example, regarding the property of a certain substance, for example, it is described that "a certain film is an insulating film". In that case, for example, one aspect of the invention can be defined as excluding the case where the insulating film is an organic insulating film. Or, for example, one aspect of the invention can be defined as excluding the case where the insulating film is an inorganic insulating film. Or, for example, one aspect of the invention can be defined as excluding the case where the film is a conductive film. Or, for example, one aspect of the invention can be defined as excluding the case where the film is a semiconductor film.

[0331] As another specific example, regarding a certain laminated structure, for example, it is described that "a certain film is provided between film A and film B". In that case, for example, if the film is a laminate of 4 layers or more. It is possible to define the invention as excluding the case where it is a layer film. Or, for example, excluding the case where a conductive film is provided between the A film and its film, it is possible to define the invention. .

[0332] Note that one aspect of the invention described in this specification and the like can be implemented by various people. However, its implementation may be carried out by multiple people. For example, in the case of a transmission and reception system, Company A may manufacture and sell a transmitter, and Company B may manufacture and sell a receiver. As another example, in the case of a light-emitting device having a transistor and a light-emitting element, the semiconductor device on which the transistor is formed is manufactured and sold by Company A. And Company B purchases the semiconductor device and forms a light-emitting element on the semiconductor device to complete it as a light-emitting device. There may be such a case.

[0333] In such a case, for either Company A or Company B, it is possible to configure an aspect of the invention that can claim patent infringement. That is, it is possible to configure an aspect of the invention that is only implemented by Company A, and as another aspect of the invention, it is possible to configure an aspect of the invention that is only implemented by Company B. Also, an aspect of the invention that can claim patent infringement against Company A or Company B is clear and can be determined to be described in this specification and the like. For example, in the case of a transmission and reception system, even if the description of only the transmitter or only the receiver is not in this specification and the like, it is possible to configure an aspect of the invention with only the transmitter, and it is possible to configure another aspect of the invention with only the receiver. Those aspects of the invention are clear and can be determined to be described in this specification and the like. As another example comes. For example, in the case of a transmission and reception system, even if the description of only the transmitter or only the receiver is not in this specification and the like, it is possible to configure an aspect of the invention with only the transmitter, and it is possible to configure another aspect of the invention with only the receiver. Those aspects of the invention are clear and can be determined to be described in this specification and the like. As another example it is possible to configure an aspect of the invention with only the transmitter, and it is possible to configure another aspect of the invention with only the receiver. Those aspects of the invention are clear and can be determined to be described in this specification and the like. As another example In the case of a light-emitting device having a transistor and a light-emitting element, even if there is no description of only the semiconductor device in which the transistor is formed or only the light-emitting device having the light-emitting element in this specification etc., one aspect of the invention can be configured by only the semiconductor device in which the transistor is formed, and one aspect of the invention can be configured by only the light-emitting device having the light-emitting element. It can be determined that one aspect of those inventions is clear and is described in this specification etc. In this specification etc., for all terminals of active elements (such as transistors and diodes), passive elements (such as capacitor elements and resistor elements), etc., even if the connection destination is not specified, those skilled in the art may be able to configure one aspect of the invention. That is, it can be said that one aspect of the invention is clear even without specifying the connection destination. And when the content where the connection destination is specified is described in this specification etc., it may be possible to determine that one aspect of the invention without specifying the connection destination is described in this specification etc. In particular, when there are multiple cases to consider for the connection destination of a terminal, it is not necessary to limit the connection destination of that terminal to a specific location. Therefore, for some terminals of active elements (such as transistors and diodes), passive elements (such as capacitor elements and resistor elements), etc., it may be possible to configure one aspect of the invention by specifying the connection destination.

[0334] In this specification etc., for a certain circuit, if at least the connection destination is specified, those skilled in the art may be able to specify the invention. Or, for a certain circuit, if at least

[0335] ​​​​​​​​​​​​​​​If the function is specified, those skilled in the art may be able to identify the invention. Thus, it can be said that if the function is specified, one aspect of the invention is clear. And if the function is specified, it may be possible to determine that one aspect of the invention is described in this specification or the like. Therefore, for a certain circuit, even if the function is not specified, if the connection destination is specified, it is disclosed as one aspect of the invention and can constitute one aspect of the invention. Or for a certain circuit, even if the connection destination is not specified, if the function is specified, it is disclosed as one aspect of the invention and can constitute one aspect of the invention.

[0336] In this specification or the like, in a certain embodiment, in the figure or text described, it is possible to take out a part of it to constitute one aspect of the invention. Therefore, when a figure or text describing a certain part is described, the content obtained by taking out a part of the figure or text is also disclosed as one aspect of the invention and can constitute one aspect of the invention. And it can be said that one aspect of the invention is clear. Therefore, for example, in a drawing or text in which one or more active elements (such as transistors, diodes), wirings, passive elements (such as capacitive elements, resistive elements), conductive layers, insulating layers, semiconductor layers, organic materials, inorganic materials, components, devices, operation methods, manufacturing methods, etc. are described, it is assumed that a part of it can be taken out to constitute one aspect of the invention. For example, from a circuit diagram composed of N (N is an integer) circuit elements (such as transistors, capacitive elements), M (M is an integer and M < N) circuit elements (such as transistors, capacitive It is possible to form an aspect. As another example, M (where M is an integer and M < N) layers are extracted from a cross-sectional view configured with N (where N is an integer) layers to form an aspect of the invention. It is possible to form an aspect. As another example, M (where M is an integer and M < N) elements are extracted from a flowchart configured with N (where N is an integer) elements to form an aspect of the invention. It is possible to form an aspect. As yet another example, some elements are arbitrarily extracted from a sentence described as "A has B, C, D, E, or F" to form an aspect of the invention such as "A has B and E", "A has E and F", "A has C, E, and F", or "A has B, C, D, and E". In addition, in this specification and the like, when at least one specific example is described in a figure or a sentence described in a certain embodiment, it is easily understood by those skilled in the art to derive the upper concept of the specific example. Therefore, when at least one specific example is described in a figure or a sentence described in a certain embodiment, the upper concept of the specific example is also disclosed as an aspect of the invention and can form an aspect of the invention. And it can be said that the aspect of the invention is clear. In addition, in this specification and the like, at least the content described in the figure (even a part of the figure) is disclosed as an aspect of the invention and can form an aspect of the invention. Therefore, for a certain content, if it is described in the figure, even if it is not described in the sentence, the content is disclosed as an aspect of the invention and forms an aspect of the invention.

[0337]

[0338] ​ It is possible to achieve. Similarly, for a figure obtained by extracting a part of a figure, it is also disclosed as one aspect of the invention and can constitute one aspect of the invention. And it can be said that one aspect of the invention is clear.

Explanation of Reference Signs

[0339] 1 FPC 2 FPC 14 Window portion 16 Base material 16a Barrier film 16b Base material 16c Resin layer 17 Protective base material 17p Protective layer 19 Detection circuit 20 Detector 20U Detection unit 21 Electrode 22 Electrode 23 Insulating layer 100 Input device 200 Electronic device 201 Display unit 202a Support 202b Support 202c Support 202d Cover portion 202e Cover portion 202f Frame portion 202g Frame portion 203a Hinge 203b Hinge 207 Housing 209 Chain line 211a Rotation axis 211b Rotation axis 211c Shaft 301 Display unit 302 Pixel 302B Sub-pixel 302G Sub-pixel 302R Sub-pixel 302t Transistor 303c Capacitance 303g(1) Scanning Line Driving Circuit 303g(2) Imaging Pixel Driving Circuit 303s(1) Image Signal Line Driving Circuit 303s(2) Imaging Signal Line Driving Circuit 303t Transistor 304 Gate 308 Imaging Pixel 308p Photoelectric Conversion Element 308t Transistor 309 FPC 311 Wiring 319 Terminal 321 Insulating Layer 328 Partition Wall 329 Spacer 350R Light Emitting Element 351R Lower Electrode 352 Upper Electrode 353 EL Layer 353a EL Layer 353b EL Layer 354 Intermediate Layer 360 Encapsulation Layer 367BM Light Shielding Layer 367p Antireflection Layer 367R Coloring Layer 380B Light Emitting Module 380G Light Emitting Module 380R Light Emitting Module 390 Touch Panel 500 Input / Output Device 501 Display Unit 502 Pixel 502B Sub-Pixel 502G Sub-Pixel 502R Sub-Pixel 502t Transistor 503c Capacitor 503g Scanning Line Driving Circuit 503t Transistor 505 Touch Panel 509 FPC 510 Substrate 510a Insulating Layer 510b Base Material 510c Adhesive layer 511 Wiring 519 Terminal 521 Insulating film 528 Partition wall 550R Light-emitting element 560 Encapsulation layer 567BM Light-shielding layer 567p Antireflection layer 567R Coloring layer 570 Substrate 570a Insulating layer 570b Flexible substrate 570c Adhesive layer 580R Light-emitting module 590 Substrate 591 Electrode 592 Electrode 593 Insulating layer 594 Wiring 595 Touch sensor 597 Adhesive layer 598 Wiring 599 Connection layer 801 Substrate 803 Substrate 804 Light-emitting part 806 Driving circuit part 808 FPC 811 Adhesive layer 813 Insulating layer 814 Conductive layer 815 Insulating layer 816 Conductive layer 817 Insulating layer 817a Insulating layer 817b Insulating layer 820 Transistor 821 Insulating layer 822 Transistor 823 Encapsulation layer 824 Encapsulation layer 825 Connector 827 Spacer 830 Light-emitting element 831 Lower electrode 833 EL layer 835 Upper electrode 841 Adhesive layer 843 Insulating layer 845 Coloring layer 847 Light-shielding layer 849 Overcoat 857 Conductive layer 857a Conductive layer 857b Conductive layer BR Wiring CFB Coloring layer CFG Coloring layer CFR Coloring layer CS Wiring G1 Scanning line M1 Transistor M2 Transistor M3 Transistor M4 Transistor RES Wiring OUT Terminal T1 Period T2 Period VPI Wiring VPO Wiring VRES Wiring

Claims

【Claim 1】 A display unit having a light-emitting element on a flexible film, a first support fixed to the central portion of the display unit, two hinges provided at both ends of the first support, a second support and a third support provided with the first support therebetween, and the second support has a first cover portion that hides an end portion of the display unit, the second support changes the angle formed with the first support by rotation of the hinge, an end portion that was hidden by the first cover portion is exposed, and the area of the display unit is widened, an electronic device.

Images