Substrate processing apparatus, method for manufacturing semiconductor device and program

By calculating the difference between film thickness and etching amount, the apparatus accurately determines the replacement timing of processing containers, addressing over-etching issues and enhancing operational efficiency.

JP2025107033APending Publication Date: 2025-07-17KOKUSAI DENKI KK
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Patent Information

Application Number
JP2024000739
Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
Filing Date
2024-01-05
Publication Date
2025-07-17

AI Technical Summary

Technical Problem

Existing substrate processing apparatuses face challenges in accurately determining the replacement time of processing chambers due to over-etching concerns, often leading to inefficient cleaning processes.

Method used

A control unit calculates the difference between a lifetime cumulative film thickness value and a cumulative etching amount to determine the optimal replacement timing of processing containers, using threshold values to notify operators of caution or warning states.

Benefits of technology

This method allows for precise timing of processing container replacements, extending their usage period and reducing over-etching risks, thereby improving operational efficiency and reducing downtime.

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Abstract

To provide technology that enables accurate determination of replacement timing of processing containers.SOLUTION: A substrate processing apparatus comprises: a processing container for processing a substrate; and a control unit configured to calculate the difference between the lifetime cumulative film thickness value, which is the cumulative value of the thickness of the deposits adhering to the inside of a processing container due to the processing of the substrate, and the cumulative etching amount estimated from the cleaning process to remove the deposits and determine the replacement timing of the processing container based on the difference.SELECTED DRAWING: Figure 9
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Description

Technical Field

[0001] The present disclosure relates to a substrate processing apparatus, a method for manufacturing a semiconductor device, and a program.

Background Art

[0002] As a substrate processing apparatus for processing a substrate, there is known one having a processing chamber and a support for supporting the substrate in multiple stages, and performing a film forming process on the substrate with the support inserted into the processing chamber (see, for example, Patent Document 1). In such a substrate processing apparatus, when the film forming process on the substrate is repeated, a film may accumulate on the processing chamber and the support. In this case, cleaning is performed to remove the accumulated film from both the processing chamber and the support.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] In recent years, a substrate processing apparatus has been developed that improves throughput by preparing a plurality of supports for one processing chamber and transferring a substrate to another support while processing the substrate supported by a certain support in the processing chamber. As described above, when operating a plurality of supports for one processing chamber, the plurality of supports may be continuously cleaned. In this case, since the processing chamber is cleaned for each support, there is a concern that the processing chamber may be over-etched. Although over-etching is repeated, the replacement time of the processing chamber is advanced, but the replacement time of the processing chamber is often determined by the number of cleaning processes, and there is room for improvement.

[0005] The present disclosure provides a technique capable of accurately grasping the replacement time of the processing chamber.

Means for Solving the Problem

[0006] According to one aspect of the present disclosure, a processing container for processing a substrate; a control unit configured to calculate a difference between a lifetime cumulative film thickness value that is a cumulative value of the thickness of deposits attached to the inside of the processing container by the processing of the substrate and a cumulative etching amount estimated from a cleaning process for removing the deposits, and to determine the replacement timing of the processing container based on the difference; A technique including the above is provided.

Advantages of the Invention

[0007] According to the present disclosure, it becomes possible to accurately grasp the replacement timing of the processing container.

Brief Description of the Drawings

[0008]

Figure 1

Figure 2

Figure 3

Figure 4A

Figure 4B

Figure 5

Figure 6

Figure 7

Figure 8

Figure 9

Figure 10

Embodiments for Carrying Out the Invention

[0009] Hereinafter, embodiments according to the present disclosure will be described with reference to the drawings. Note that the drawings used in the following description are all schematic, and the dimensional relationships of the elements on the drawings, the ratios of the elements, etc. do not necessarily match the actual ones. Also, the dimensional relationships of the elements and the ratios of the elements do not necessarily match among the plurality of drawings.

[0010] (1) Configuration of the substrate processing apparatus The schematic configuration of a substrate processing apparatus according to an embodiment of the present disclosure will be described with reference to FIGS. 1 and 2. FIG. 1 is a cross-sectional view showing a schematic configuration example of a substrate processing apparatus according to the present technology. FIG. 2 is a longitudinal sectional view showing a schematic configuration example of a substrate processing apparatus according to an embodiment of the present disclosure, and is also a sectional view along arrow 2X-2X in FIG. 1.

[0011] In FIGS. 1 and 2, a substrate processing apparatus 100 to which the technology of the present disclosure is applied is shown. The substrate processing apparatus 100 is an apparatus for processing a substrate S. The substrate processing apparatus 100 includes a transfer chamber 140, a reactor 200, a transfer chamber 270, and a controller 400.

[0012] <Transfer chamber 140> The transfer chamber 140 is a room for transferring the substrate S. The transfer chamber 140 is constituted by a housing 142.

[0013] The transfer chamber 140 is configured to communicate with the transfer chamber 270. Specifically, the transfer chamber 140 communicates through the loading / unloading port 144 provided in the housing 272 that constitutes the transfer chamber 270. The loading / unloading port 144 is used as a passage for loading the substrate S from the transfer chamber 140 into the transfer chamber 270 or unloading the substrate S from the transfer chamber 270 into the transfer chamber 140. The loading / unloading port 144 is opened and closed by a gate valve 146 attached to the housing 272.

[0014] A transfer robot 150 for transferring (conveying) the substrate S is installed in the transfer chamber 140. The transfer robot 150 has an arm 152 equipped with an end effector. The transfer robot 150 is configured to be able to move up and down and rotate while maintaining the airtightness of the transfer chamber 140 by a lifting device (not shown) and a rotating device (not shown).

[0015] The transfer robot 150 receives the substrate S before being processed by the reactor 200 from a device outside the transfer chamber 140 and loads the received substrate S into the transfer chamber 270. Also, the transfer robot 150 unloads the substrate S after being processed by the reactor 200 from the transfer chamber 270 and delivers the unloaded substrate S to a device outside the transfer chamber 140. In this embodiment, the substrate S before being processed by the reactor 200 is referred to as an unprocessed substrate S.

[0016] <Reactor 200> The reactor 200 is a chamber capable of processing the substrate S. The reactor 200 is, for example, a chamber that performs processes such as forming a thin film on the surface of the substrate S.

[0017] The reactor 200 includes a processing chamber 210. Note that the processing chamber 210 is located above the transfer chamber 270. Here, the term "above" refers to the upper direction in the vertical direction. Also, when referring to "below", it refers to the lower direction in the vertical direction. Also, the vertical direction in this embodiment is the same direction as the up and down direction of the substrate processing apparatus 100. Hereinafter, the upper and lower directions in the vertical direction will be simply referred to as "above" and "below" for brevity.

[0018] The processing chamber 210 is a room capable of performing substrate processing including a process of heating the substrate S. This processing chamber 210 is mainly composed of a reaction tube 212 as an example of a processing container. In addition, a plurality of boats 240 are individually transported into the processing chamber 210 for substrate processing. In other words, the processing chamber 210 performs substrate processing while replacing a plurality of boats 240.

[0019] On the outer peripheral side of the reaction tube 212, a heater 214 is disposed as a heating unit for heating the boat 240 and the substrate S supported by the boat 240 via the reaction tube 212. The heater 214 is spaced apart from the outer peripheral wall of the reaction tube 212. In the present embodiment, a resistance heater is used as the heater 214. Note that, as long as the heater 214 can heat the boat 240 and the substrate S supported by the boat 240, a heater other than the resistance heater may be used.

[0020] The upper end of the reaction tube 212 is closed. At the lower end of the reaction tube 212, a flange portion 212a protruding radially inward of the reaction tube 212 is provided. The center of the flange portion 212a is open to form a furnace port 212b. The boat 240 moves between the processing chamber 210 and the transfer chamber 270 through the furnace port 212b.

[0021] The reaction tube 212 is configured to be able to accommodate the boat 240 that supports the substrate S. Note that, among the internal space of the reaction tube 212, the region where the boat 240 that supports the substrate S is accommodated is called a processing region, and the section that constitutes the processing region is called the processing chamber 210.

[0022] The reaction tube 212 is provided with a plurality of nozzles 220. These nozzles 220 penetrate the peripheral wall of the reaction tube 212 and extend upward from below. A plurality of gas holes (not shown) are provided in each nozzle 220 at intervals in the extending direction. The gas supplied from the gas holes of the nozzle 220 is supplied to the substrate S supported by the boat 240 in the processing chamber 210.

[0023] The nozzle 220 is provided for each gas type, for example. In this embodiment, as an example, two nozzles 220a and 220b are used. Each nozzle 220 is arranged so as not to overlap in the horizontal direction.

[0024] As shown in FIG. 2, the first gas is supplied from the first gas supply unit 222 to the nozzle 220a. That is, the first gas supply unit 222 is configured to supply the first gas to the nozzle 220a. The first gas supply unit 222 includes a gas supply pipe 222a, a mass flow controller (flow control unit) MFC 222c, and a valve 222d which is an on-off valve. In the gas supply pipe 222a, a first gas source 222b, an MFC 222c, and a valve 222d are provided in this order from the upstream direction. The gas supply pipe 222a is configured to communicate with the nozzle 220a. The first gas supply unit 222 may include the first gas source 222b.

[0025] The first gas source 222b is a source of a first gas containing a first element (also referred to as "first element-containing gas").

[0026] Also, as shown in FIG. 2, the cleaning gas is supplied from the first cleaning gas supply unit 223 to the nozzle 220a. That is, the first cleaning gas supply unit 223 is configured to supply the cleaning gas to the nozzle 220a. The first cleaning gas supply unit 223 includes a gas supply pipe 223a, an MFC 223c, and a valve 223d. In the gas supply pipe 223a, a first cleaning gas source 223b, an MFC 223c, and a valve 223d are provided in this order from the upstream direction. The gas supply pipe 223a is connected to a portion on the downstream side of the valve 222d of the gas supply pipe 222a. This gas supply pipe 223a is configured to communicate with the nozzle 220a via the gas supply pipe 222a. The first cleaning gas supply unit 223 may include the first cleaning gas source 223b.

[0027] The first cleaning gas source 223b is a cleaning gas source.

[0028] As shown in FIG. 2, a second gas is supplied to the nozzle 220b from the second gas supply unit 224. That is, the second gas supply unit 224 is configured to supply the second gas to the nozzle 220b. The second gas supply unit 224 includes a gas supply pipe 224a, an MFC 224c, and a valve 224d. In the gas supply pipe 224a, a second gas source 224b, an MFC 224c, and a valve 224d are provided in order from the upstream direction. The gas supply pipe 224a is configured to communicate with the nozzle 220b. The second gas source 224b may be included in the second gas supply unit.

[0029] The second gas source 224b is a source of a second gas containing a second element (hereinafter also referred to as "second element-containing gas"). The second element-containing gas is one of the process gases. Note that the second element-containing gas may be considered as a reaction gas or a reforming gas.

[0030] Also, as shown in FIG. 2, a cleaning gas is supplied to the nozzle 220b from the second cleaning gas supply unit 225. That is, the second cleaning gas supply unit 225 is configured to supply the cleaning gas to the nozzle 220b. The second cleaning gas supply unit 225 includes a gas supply pipe 225a, an MFC 225c, and a valve 225d. In the gas supply pipe 225a, a second cleaning gas source 225b, an MFC 225c, and a valve 225d are provided in order from the upstream direction. The gas supply pipe 225a is connected to a portion of the gas supply pipe 224a on the downstream side of the valve 224d. This gas supply pipe 225a is configured to communicate with the nozzle 220b via the gas supply pipe 224a. The second cleaning gas supply unit 225 may include the second cleaning gas source 225b.

[0031] The second cleaning gas source 225b is a source of a cleaning gas containing fluorine. Note that the second cleaning gas source 225b of the present embodiment is a cleaning gas having the same properties as the first cleaning gas source 223b.

[0032] In this embodiment, the number of nozzles 220 is two, but the present disclosure is not limited to this configuration. The number of nozzles 220 may be set to three or more according to the content of substrate processing. For example, a dedicated nozzle may be provided for supplying cleaning gas, or a dedicated nozzle may be provided for supplying inert gas.

[0033] As shown in FIG. 2, an exhaust section 230 is connected to the reaction tube 212. The exhaust section 230 performs vacuum exhaust so that the pressure inside the reaction tube 212 becomes a predetermined pressure (degree of vacuum). The exhaust section 230 includes an exhaust pipe 230a, a valve 230b, and an APC (Auto Pressure Controller) valve 230c as a pressure regulator (pressure regulating section). The exhaust section 230 may include a vacuum pump (not shown) connected downstream of the exhaust pipe 230a. The exhaust pipe 230a communicates with the inside of the reaction tube 212. A vacuum pump is connected to this exhaust pipe 230a via the valve 230b and the valve 230c. Further, the exhaust section 230 may be provided with a pressure detection section 230d having a function of detecting the pressure inside the reaction tube 212. The pressure inside the reaction tube 212 is adjusted by the cooperation of the above-described gas supply section and the exhaust section 230. When adjusting the pressure, for example, the pressure value detected by the pressure detection section 230d may be adjusted so as to become a predetermined value.

[0034] <Transfer chamber 270> As shown in FIG. 2, the transfer chamber 270 is a room for transferring the boat 240 and the substrate S to the reactor 200. In the transfer chamber 270, the substrate S can also be transferred by the transfer robot 150 in the transfer chamber 140 via the loading / unloading port 144. Although details will be described later, in the transfer chamber 270, the boat 240 supporting the substrate S is switched and transferred to the reactor 200. The transfer chamber 270 includes a plurality of boats 240, a revolving section 260, and a cooling section 290.

[0035] The transfer chamber 270 is located below the processing chamber 210 and is configured to communicate with the processing chamber 210. Specifically, the lower end of the reaction tube 212 is connected to the upper part (ceiling part) of the housing 272 that constitutes the transfer chamber 270. The transfer chamber 270 communicates with the inside of the reaction tube 212 through the furnace opening 212b.

[0036] An inlet / outlet 144 for loading and unloading the substrate S is provided on the side wall of the housing 272. The inlet / outlet 144 is opened and closed by a gate valve 146. In the transfer chamber 270, the substrate S is placed (loaded) on the boat 240 by the transfer robot 150 through the inlet / outlet 144, or the substrate S is taken out from the boat 240 by the transfer robot 150.

[0037] A boat elevator 274 is provided in the transfer chamber 270. This boat elevator 274 is a device capable of raising and lowering the boat 240. This boat elevator 274 has a lid 276 that supports the boat 240. The boat 240 moves between the transfer chamber 270 and the processing chamber 210 as the lid 276 rises and falls. The lid 276 is a member that closes the furnace opening 212b. An O-ring as a sealing member may be provided on the lower surface of the flange portion 212a of the reaction tube 212 or the upper surface of the lid 276. When the O-ring is provided, when the boat 240 is set at a predetermined position in the processing chamber 210, the O-ring is crushed and deformed between the flange portion 212a and the lid 276. Thereby, the inside of the reaction tube 212 is kept more airtight. Also, a heater may be provided on the lid 276. By providing a heater on the lid 276, it becomes possible to maintain the same temperature between the substrate S disposed below the boat 240 and the substrate S disposed above.

[0038] On the lid body 276, a boat support portion 278 for supporting the boat 240 is provided. This boat support portion 278 has a rotation shaft 278a and a rotation mechanism 278b. The rotation shaft 278a extends in the vertical direction. The bottom plate portion 244 of the boat 240 is connected to the upper end portion of the rotation shaft 278a. When the rotation shaft 278a rotates with the bottom plate portion 244 of the boat 240 connected to the upper end portion of the rotation shaft 278a, the boat 240 rotates with respect to the lid body 276. For example, the boat 240 accommodated in the processing chamber 210 rotates due to the rotation of the rotation shaft 278a. Also, the rotation mechanism 278b is fixed to the lid body 276. The rotation mechanism 278b rotatably supports the rotation shaft 278a.

[0039] The boat elevator 274 moves the lid body 276 downward and receives the boat 240 from the boat support portion 262 on the revolving portion 260 at the upper end portion of the rotation shaft 278a. When the boat elevator 274 receives the boat 240, it raises the lid body 276. Then, it accommodates the boat 240 in the processing chamber 210. Also, after the substrate processing of the substrate S in the processing chamber 210 is completed, the boat elevator 274 lowers the lid body 276 and takes out the boat 240 from the processing chamber 210. Then, it delivers the boat 240 from the rotation shaft 278a on the lid body 276 to the boat support portion 262 on the revolving portion 260.

[0040] An exhaust portion 280 is connected to the transfer chamber 270. The exhaust portion 280 is a device for vacuum exhausting so that the pressure in the transfer chamber 270 becomes a predetermined pressure (vacuum degree). The exhaust portion 280 is composed of an exhaust pipe 280a, a valve 280b, and an APC valve 280c. Note that a vacuum pump (not shown) may be included in the exhaust portion 280. The exhaust pipe 280a communicates with the transfer chamber 270. A vacuum pump is connected to this exhaust pipe 280a via the valve 280b and the valve 280c. Also, a pressure detection portion 280d having a function of detecting the pressure in the transfer chamber 270 may be provided in the exhaust portion 280.

[0041] The boat 240 is a support tool capable of supporting the substrate S. The boat 240 is configured to be able to support at least one substrate S. When supporting a plurality of substrates S, it is configured to support the substrates S with a space in the vertical direction. This boat 240 includes a top plate portion 242, a bottom plate portion 244, and a support portion 246. The support portion 246 is located between the top plate portion 242 and the bottom plate portion 244. Also, the support portion 246 includes a plurality of placement portions (not shown) that enable a plurality of substrates S to be supported with a space in the vertical direction. In other words, the support portion 246 can support a plurality of substrates S in multiple stages in the vertical direction by a plurality of placement portions. In this embodiment, as an example, three boats 240 are used, and the boat A is defined as the boat 240a, the boat B is defined as the boat 240b, and the boat C is defined as 240c. When the boat 240 is described in this embodiment, it may indicate any one or all of the boats 240a, 240b, and 240c.

[0042] As shown in FIG. 1, the revolving portion 260 is a device capable of revolving the boat 240. The revolving portion 260 includes a boat support portion 262, a revolving table 264, a revolving shaft 266, and a revolving mechanism 268.

[0043] The boat support part 262 is a part that supports the boat 240. A plurality of boat support parts 262 are provided on the revolving table 264. Specifically, they are provided at intervals in the rotation direction of the revolving table 264. In this embodiment, as an example, three boat support parts 262 are provided on the revolving table 264. The boat support part 262 has a boat support part 262a corresponding to the boat 240a, a boat support part 262b for the boat 240b, and a boat support part 262c for the boat 240c, respectively. Also, when the boat support part 262 is described in this embodiment, it may indicate any one or all of the boat support part 262a, the boat support part 262b, and the boat support part 262c. Further, the boat support part 262 has a rotation shaft 263 and a rotation mechanism 265. The rotation shaft 263 extends vertically from the revolving table 264. The upper end of this rotation shaft 263 is removably connected to the bottom plate part 244 of the boat 240. When the rotation shaft 263 rotates with the bottom plate part 244 connected to the upper end of the rotation shaft 263, the boat 240 rotates with respect to the revolving table 264. For example, when transferring the substrate S by the transfer robot 150, the boat 240 can be rotated to adjust the orientation of the boat 240. The rotation mechanism 265 is fixed to the revolving table 264 and rotatably supports the rotation shaft 263.

[0044] The plurality of boat support parts 262 are respectively provided on the upper surface of the revolving table 264. A revolving shaft 266 is connected to the central part of the revolving table 264. When the revolving shaft 266 rotates, the revolving table 264 rotates. Due to the rotation of the revolving table 264, the boat support part 262 revolves around the revolving shaft 266.

[0045] The revolving shaft 266 is connected to the revolving table 264. This revolving shaft 266 extends vertically and penetrates the bottom wall of the transfer chamber 270. The revolving shaft 266 rotates the revolving table 264 and revolves the boat support part 262 by the rotational force from the revolving mechanism 268. The revolving mechanism 268 is controlled by the controller 400.

[0046] The revolving mechanism 268 is provided on the lower surface of the bottom wall of the transfer chamber 270 and rotatably supports the revolving shaft 266. For example, by revolving the revolving table 264, the boat 240 can be moved from a position adjacent to the loading / unloading port 144 to a position below the processing chamber 210. Specifically, when moving to the next area, the revolving table 264 is rotated so that the boat is revolved by about 120 degrees according to the situation.

[0047] A plurality of cooling units 290 are provided on the revolving table 264 corresponding to the plurality of boats 240. For example, a cooling unit 290a is provided for the boat 240a described later, a cooling unit 290b is provided for the boat 240b described later, and a cooling unit 290c is provided for the boat 240c described later.

[0048] Also, as shown in FIG. 1, the transfer chamber 270 has a first area A1, a second area A2, and a third area A3 within the area above the revolving section 260.

[0049] The first area A1 is an area where the boat 240 can be moved between the revolving section 260 and the boat elevator 274. Specifically, in the first area A1, the boat 240 is moved between the boat support portion 262 of the revolving section 260 and the boat support portion 278 of the boat elevator 274. This first area A1 is arranged below the processing chamber 210.

[0050] The second area A2 is an area where the boat 240 and the substrate S after the heat treatment can be made to wait. Also, the second area A2 is an area where the boat 240 and the substrate S after the heat treatment can be cooled. Specifically, in the second area A2, an inert gas is sent from the cooling unit 290 toward the boat 240 and the substrate S after the heat treatment. Thereby, the substrate S after the heat treatment is cooled. The second area A2 is arranged downstream in the rotation direction of the first area A1 when the revolving section 260 rotates clockwise (rightward).

[0051] The third area A3 is adjacent to the transfer chamber 140 and is an area where the substrate S can be transferred between the transfer chamber 140. Specifically, the transfer robot 150 delivers the unprocessed substrate S to the boat 240 located in the third area A3, or receives the processed substrate S from the boat 240 located in the third area A3. In this way, the substrate S is transferred between the third area A3 and the transfer chamber 140. In the third area A3, the boat 240 is arranged at a position facing the loading / unloading port 144, and the transfer robot 150 is configured to be able to transfer the substrate S.

[0052] In the present embodiment, as shown in FIG. 1, for convenience, the first area A1, the second area A2, and the third area A3 are respectively areas with an equal angle (120 degrees) centered on the rotation axis of the revolving unit 260. That is, the sizes of the first area A1, the second area A2, and the third area A3 are set to be the same. The present disclosure is not limited to this configuration. The size of each area may be set as appropriate. Also, a new area may be set separately from the first area A1, the second area A2, and the third area A3.

[0053] <Controller> Next, the controller 400 will be described with reference to FIG. 3. The controller 400 controls the operations of each part of the substrate processing apparatus 100.

[0054] The controller 400 is configured as a computer including a control unit 409 having a CPU (Central Processing Unit) 401 and a RAM (Random Access Memory) 402, a storage unit 403 as a storage device, and an I / O port 404. The RAM 402, the storage unit 403, and the I / O port 404 are configured to be able to exchange data with the CPU 401 via an internal bus 405.

[0055] Further, as shown in FIG. 3, the control unit 409 may include a calculation unit 407 that performs calculations in the substrate processing apparatus 100, and a determination unit 408 that selects each operation in the substrate processing apparatus 100. Also, the calculation in the substrate processing apparatus 100 may be performed by one of the functions of the CPU 401, and the selection of each operation in the substrate processing apparatus 100 may be performed by one of the functions of the CPU 401. That is, the calculation unit 407 and the determination unit 408 may be configured by the functions of the CPU 401.

[0056] The CPU 401 is configured to read and execute a control program from the storage unit 403, and read a process recipe from the storage unit 403 in response to an input of an operation command from the operation unit 423 as an input / output device. Then, the CPU 401 is configured to be able to control, for example, the opening and closing operation of the gate valve 146, the on / off control of each pump, the flow rate adjustment operation of the MFC, the opening and closing operation of the valve, etc., in accordance with the content of the read process recipe. Note that the operation unit 423 is connected to a display unit 424 such as a display capable of displaying the processing state of the substrate S via the internal bus 405. The operation unit 423 may also be directly connected to the display unit 424. When the operation unit 423 is a touch panel having the function of the display unit 424, the display unit 424 may be omitted.

[0057] The storage unit 403 is composed of, for example, a flash memory, an HDD (Hard Disk Drive), etc. In the storage unit 403, a recipe 410 composed of a process recipe or the like in which the procedure and conditions of substrate processing are described, a control program 411 for controlling the operation of the substrate processing apparatus 100, processing container information 412 in which information regarding the reaction tube 212 is stored, support tool information 413 in which information regarding the boat 240 is stored, etc. are stored so as to be readable.

[0058] As shown in FIG. 4A, the processing container information 412 may include a lifetime cumulative film thickness value RLT, which is the cumulative value of the thickness of a film (an example of a deposit) attached to the inside of the reaction tube 212 by the processing of the substrate S, and a cumulative etching amount REA estimated from a cleaning process performed to remove the attached film. Here, the lifetime cumulative film thickness value RLT is the cumulative film thickness value from the start of use of the reaction tube 212, and is a value that is not subtracted during the period when deposits remain in the reaction tube 212. Note that the film thickness value to be attached is obtained from the type of processing gas used for the processing of the substrate S and the time of substrate processing. The film thickness value may also be obtained for several patterns through experiments and stored in the storage unit 403. The cumulative etching amount REA is the cumulative etching amount estimated from the cleaning process from the start of use of the reaction tube 212, and is a value that is not subtracted during the process. Note that the etching amount is obtained from the type of cleaning gas and the time of the cleaning process. The etching amount may also be obtained for several patterns through experiments and stored in the storage unit 403.

[0059] Further, the processing container information 412 may include threshold information of the reaction tube 212. The threshold information may include a threshold RT1 for determining a caution state of the reaction tube 212 and a threshold RT2 for determining a warning state of the reaction tube 212. The caution state of the reaction tube 212 is the state from the initial stage to the middle stage at the time of replacement of the reaction tube 212, and indicates a state in which preparation for the replacement reaction tube 212 should be made. On the other hand, the warning state of the reaction tube 212 is the state from the middle stage to the final stage at the time of replacement of the reaction tube 212, and indicates a state in which the reaction tube 212 should be replaced immediately.

[0060] The support tool information 413 may include, as shown in FIG. 4B, a cumulative film thickness value BCT that is the cumulative value of the thickness of a film (an example of a deposit) attached to the boat 240 by the processing of the substrate S, and the number of cleaning processes N (hereinafter, appropriately referred to as the "number of cleaning times N") performed to remove the attached film. The support tool information 413 may include threshold value information for the boat 240. The threshold value information may include cleaning information for the boat 240 and replacement information for the boat 240. The cleaning information for the boat 240 may include a threshold value BT1 for determining the start time of the cleaning process for the boat 240. The replacement information for the boat 240 may include a threshold value BT2 for determining a caution state regarding the replacement of the boat 240 and a threshold value BT3 for determining a warning state regarding the replacement of the boat 240. The support tool information 413 is stored in the storage unit 403 for each boat 240.

[0061] In the present embodiment, the threshold value information included in the processing chamber information 412 is set using the operation unit 423. Similarly, the threshold value information included in the support tool information 413 is set using the operation unit 423. Note that the present disclosure is not limited to this, and each threshold value information may be set in advance.

[0062] Note that the process recipe is a combination that causes the controller 400 to execute each procedure in the substrate processing step described later so as to obtain a predetermined result, and functions as a program.

[0063] Hereinafter, this process recipe, control program, etc. are collectively referred to simply as a program. Note that when the term "program" is used in this specification, it may include only the process recipe alone, only the control program alone, or both of them. Further, the RAM 402 is configured as a memory area (work area) that temporarily holds programs, data, etc. read by the CPU 401.

[0064] The I / O port 404 is connected to each component such as the gate valve 146, each pressure regulator, each pump, and the heater control unit. Further, a network transceiver 421 is provided which is connected to the host device 420 via a network.

[0065] Note that the controller 400 can be configured by, for example, installing a program in a computer using an external storage device 422 that stores the above-described program. Examples of the external storage device 422 include magnetic disks such as hard disks, optical disks such as DVDs, magneto-optical disks such as MOs, and semiconductor memories such as USB memories. Further, the means for supplying a program to the computer is not limited to the case of supplying via the external storage device 422. For example, communication means such as the Internet or a dedicated line may be used to supply the program without passing through the external storage device 422. Note that the storage unit 403 and the external storage device 422 are configured as a computer-readable recording medium. Hereinafter, these are collectively referred to simply as a recording medium. Note that, in this specification, when the term "recording medium" is used, it may include only the storage unit 403 alone, only the external storage device 422 alone, or both of them.

[0066] The control unit 409 of the controller 400 is configured to calculate a difference D between a lifetime cumulative film thickness value RLT, which is a cumulative value of the thickness of the film attached to the inside of the reaction tube 212 by the processing of the substrate S, and a cumulative etching amount REA estimated from a cleaning process for removing the attached film, and to be able to determine the replacement timing of the reaction tube 212 based on the difference D. Specifically, as described above, the control unit 409 of the present embodiment includes a CPU 401, a RAM 402, a calculation unit 407 that calculates the difference D, and a determination unit 408 that determines the replacement timing of the reaction tube 212 based on the difference D.

[0067] The determination unit 408 determines the replacement timing of the reaction tube 212 by comparing a preset threshold value with the difference D. Specifically, the determination unit 408 compares the threshold value RT1 indicating the attention state of the replacement timing in the reaction tube 212 with the difference D, and determines that the reaction tube 212 has reached the replacement timing when the difference D is equal to or greater than the threshold value RT1. Then, the control unit 409 notifies the determination result by the determination unit 408. Specifically, when it is determined by the determination unit 408 that the reaction tube 212 is at the replacement timing, the control unit 409 causes the display unit 424 capable of displaying the processing state of the substrate S to display a display indicating the replacement of the reaction tube 212 on the display unit 424 (see FIG. 10).

[0068] Further, the determination unit 408 compares the threshold value RT2 indicating the warning state of the replacement timing in the reaction tube 212 with the difference D, and determines that the reaction tube 212 has reached the timing when it should be immediately replaced when the difference D is equal to or greater than the threshold value RT2. Then, the control unit 409 notifies the determination result by the determination unit 408. Specifically, when it is determined by the determination unit 408 that the reaction tube 212 is at the replacement timing, the control unit 409 causes the display unit 424 capable of displaying the processing state of the substrate S to display a display indicating the replacement of the reaction tube 212 on the display unit 424 (see FIG. 10).

[0069] Further, the control unit 409 controls the display indicating the replacement of the reaction tube 212 to be different before and after the difference D exceeds the threshold value. Specifically, when the difference D becomes equal to or greater than the threshold value RT1, the control unit 409 controls the display unit 424 to change the color of the attention display indicating the replacement timing of the reaction tube 212. Also, when the difference D becomes equal to or greater than the threshold value RT2, the control unit 409 returns the color of the attention display indicating the replacement timing to the original color, and controls the display unit 424 to change the color of the warning display indicating the replacement timing of the reaction tube 212 (see FIG. 10).

[0070] In this embodiment, as an example, the determination unit 408 determines the caution state or warning state of the replacement time by comparing the difference D between the lifetime cumulative film thickness value RLT and the cumulative etching amount REA with the threshold value RT1 indicating the caution state at the replacement time or the threshold value RT2 indicating the warning state at the replacement time. However, the present disclosure is not limited to this configuration. For example, the storage unit 403 stores the cumulative value of the over-etching amount when the reaction tube 212 is over-etched by the cleaning process, and the determination unit 408 compares the cumulative value of the over-etching amount stored in the storage unit 403 with the threshold value to determine the presence or absence of the caution state or warning state at the replacement time. Also, for example, the storage unit 403 stores the number of over-etching times instead of the over-etching amount, and the determination unit 408 compares the number of over-etching times with the threshold value to determine the presence or absence of the caution state or warning state at the replacement time.

[0071] In this embodiment, as an example, the determination result by the determination unit 408 is displayed on the display unit 424. However, the present disclosure is not limited to this configuration. For example, while displaying on the display unit 424, the replacement time may be notified by voice or the like. Also, it may be notified via a communication line.

[0072] Also, the controller 400 having the control unit 409 may control to perform the cleaning process with the boat 240 carried into the reaction tube 212. Also, the control unit 409 may control to perform the cleaning process in a state where the boat 240 does not support the substrate S. In this case, the boat 240 and the reaction tube 212 can be cleaned simultaneously. Note that the present disclosure is not limited to this configuration, and the control unit 409 may control to perform the cleaning process in a state where the boat 240 is carried out from the reaction tube 212. In this case, only the reaction tube 212 can be cleaned.

[0073] When the reaction tube 212 is replaced, the control unit 409 controls the storage unit 403 to clear (zero-clear) the lifetime cumulative film thickness value RLT and the cumulative etching amount REA of the reaction tube 212, respectively. Further, when the reaction tube 212 is over-etched by the cleaning process, the control unit 409 may control to clear (zero-clear) the lifetime cumulative film thickness value RLT and the cumulative etching amount REA, respectively, because there is no residue of the deposit on the reaction tube 212.

[0074] Further, the determination unit 408 may determine the replacement timing of the boat 240 based on the number of times N that the cleaning process is performed on the boat 240. The determination unit 408 determines the replacement timing of the boat 240 by comparing a preset threshold value with the number of times N. Specifically, the determination unit 408 compares the threshold value BT2 indicating the caution state of the replacement timing in the boat 240 with the number of times N, and determines that the boat 204 has reached the replacement timing when the number of times N is equal to or greater than the threshold value RT1. Then, the control unit 409 notifies the determination result by the determination unit 408. Specifically, when the determination unit 408 determines that the boat 240 is at the replacement timing, the control unit 409 causes the display unit 424 to display a display indicating the replacement of the boat 240 on the display unit 424 (see FIG. 10).

[0075] Further, the determination unit 408 compares the threshold value BT3 indicating the warning state of the replacement timing in the boat 240 with the number of times N, and determines that the boat 240 has reached the time when it should be immediately replaced when the number of times N is equal to or greater than the threshold value BT3. Then, the control unit 409 notifies the determination result by the determination unit 408. Specifically, when the determination unit 408 determines that the boat 240 is at the replacement timing, the control unit 409 causes the display unit 424 capable of displaying the processing state of the substrate S to display a display indicating the replacement of the boat 240 on the display unit 424 (see FIG. 10).

[0076] Further, when the boat 240 is replaced, the control unit 409 controls the storage unit 403 to clear (zero-clear) the cumulative film thickness value BCT and the number of cleaning times N of the replaced boat 240, respectively.

[0077] (2) Substrate Processing Step Next, the substrate processing step will be described with reference to FIGS. 5 and 6. As one step of the substrate processing apparatus, a step of processing the substrate S using the substrate processing apparatus 100 having the above-described configuration will be described. In the following description, the operations of the respective parts constituting the substrate processing apparatus 100 are controlled by the controller 400.

[0078] First, as shown in FIG. 5, the substrate S is transferred from the transfer chamber 140 to the boat 240a in the third area A3 of the transfer chamber 270 using the transfer robot 150. Here, the substrate S transferred to the boat 240a is denoted by reference numeral S1 for convenience.

[0079] Next, by the rotation of the revolving unit 260 (clockwise rotation in FIG. 5), the boat 240a supporting the substrate S1 revolves from the third area A3 to the first area A1, and the boat 240b not supporting the substrate (appropriately referred to as the "empty boat 240") revolves from the second area A2 to the third area A3. Here, the next substrate S (the second substrate) is transferred from the transfer chamber 140 to the empty boat 240b that has moved to the third area A3 using the transfer robot 150.

[0080] When the boat 240a supporting the substrate S1 moves to the first area A1, this boat 240a rises while being supported by the boat elevator 274. Then, the boat 240a is accommodated in the processing chamber 210. That is, the boat 240a located in the first area A1 is carried into the processing chamber 210.

[0081] The boat 240a accommodated in the processing chamber 210 is heat-treated. That is, the first gas and the second gas are supplied to the substrate S1 supported by the boat 240a, and a film is formed by substrate processing including heat treatment. In this way, substrate processing is performed on the substrate S1 (step S200 shown in FIG. 6).

[0082] When the heat treatment of the substrate S is completed, the pressure between the processing chamber 210 and the transfer chamber 270 is adjusted, and the boat 240a is carried out from the processing chamber 210 by the boat elevator 274. The boat 240a carried out from the processing chamber 210 is delivered to the boat support portion 262a on the first area A1 of the revolving portion 260.

[0083] The boat 240a carried out from the processing chamber 210 revolves and moves from the first area A1 to the second area A2 by the rotation of the revolving portion 260. The boat 240a that has moved to the second area A2 is cooled by the inert gas sent from the cooling unit 290a. That is, the substrate S1 supported by the boat 240a is cooled by the inert gas.

[0084] Next, due to the substrate processing of the substrate S1, the film thickness of the film adhering to the used boat 240a increases, so the cumulative film thickness value BCT1a of this boat 240a is updated (step S210).

[0085] Also, due to the substrate processing of the substrate S1, the film thickness of the film adhering to the inner surface of the reaction tube 212 increases, so the lifetime cumulative film thickness value RLT of the reaction tube 212 is updated (step S220). Note that the order of step S210 and step S220 may be interchanged.

[0086] Next, a cleaning timing determination process for the boat 240 (here, the boat 240a) is performed (step S230). The cleaning timing determination process for the boat 240 will be described later.

[0087] Also, an exchange timing determination process for the boat 240 (here, the boat 240a) is performed (step S240). The exchange timing determination process for the boat 240 will be described later.

[0088] Also, an exchange timing determination process for the reaction tube 212 is performed (step S250). The exchange timing determination process for the reaction tube 212 will be described later. Note that the order of step S230, step S240, and step S250 may be interchanged.

[0089] In addition, step S210, step S220, step S230, step S240, and step S250 may be executed during the substrate processing.

[0090] In this way, the substrate processing step of the substrate S1 is completed. When the substrate processing of the substrate S1 is completed, the boat 240b that supports the second substrate S is accommodated in the processing chamber 210, and the above steps S200 to S250 are repeated.

[0091] (3) Cleaning timing determination processing step Next, the cleaning timing determination processing step will be described with reference to FIG. 7. As one step of the substrate processing apparatus, a step of determining the cleaning timing for the boat 240 of the substrate processing apparatus 100 having the above-described configuration will be described. In the present embodiment, when performing the cleaning process, the boat 240 is accommodated in the reaction tube 212 and the cleaning process is performed. Therefore, the reaction tube 212 is also cleaned together with the boat 240. In the following description, the operations of each part constituting the substrate processing apparatus 100 are controlled by the controller 400. In addition, the following description will be made using boat A (boat 240a) as an example of the boat 240 for processing the substrate. The same applies when the substrate is processed in boat B (boat 240b) and boat C (boat 240c) which are not described below.

[0092] First, when the substrate processing (step S200) of the substrate S1 is completed in the substrate processing step, the cumulative film thickness value BCT1a of the boat 240a used for the substrate processing is updated in step S210. Then, the cleaning timing determination process for the boat 240a used for the substrate processing is performed in step S230. Specifically, the threshold value BT1a for cleaning start determination is acquired in step S231 shown in FIG. 7.

[0093] Next, in step S232, the cumulative film thickness value BCT1a is compared with the threshold value BT1a. If the cumulative film thickness value BCT1a is greater than or equal to the threshold value BT1a, it is determined that the cleaning time has been reached, and the process proceeds to step S233. On the other hand, if the cumulative film thickness value BCT1a is less than the threshold value BT1a, it is determined that the cleaning start time has not been reached, and the process proceeds to the next process without performing the cleaning process. Here, the next process mentioned here is the determination process for the replacement time of the boat 240a (step S240).

[0094] In step S233, the cleaning process of the boat 240a is performed. Specifically, an empty boat 240a that does not support the substrate S is carried into the reaction tube 212 and the cleaning process is performed. Here, if the boat 240a immediately after the substrate process is determined to be the cleaning process target, before the next substrate process is performed in the reaction tube 212, all the substrates S are discharged from the boat 240a, the boat 240a is emptied, and then it is carried into the processing chamber 210. Then, according to a predetermined procedure, the cleaning process is performed on the boat 240a and the reaction tube 212 using the cleaning gas. When the cleaning process is completed, the process proceeds to step S234.

[0095] In step S234, the cleaning count N of the boat (hereinafter appropriately referred to as the "cleaned boat") 240a that has undergone the cleaning process is updated. Also, the cumulative film thickness value BCT1a of the cleaned boat 240a is cleared (zero-cleared). After the end of step S234, the process proceeds to the next process. Here, the next process mentioned here is the determination process for the replacement time of the boat 240a (step S240).

[0096] (4) Support tool replacement time determination process Next, the support tool replacement timing determination process will be described with reference to FIG. 8. As one process of the substrate processing apparatus, a process for determining the replacement timing of the boat 240 of the substrate processing apparatus 100 having the above-described configuration will be described. In the following description, the operations of each part constituting the substrate processing apparatus 100 are controlled by the controller 400. Further, as an example of the boat 240 for processing the substrate, the following description will be made using boat A (boat 240a). The same applies to the case where the substrate is processed in boat B (boat 240b) and boat C (boat 240c) which are not described below.

[0097] When the cleaning timing determination process (step S230) of the boat 240a in the substrate processing step is completed, the support tool replacement timing determination process is executed as step S240. First, a threshold value BT2a for support tool replacement determination is acquired in step S241 shown in FIG. 8.

[0098] Next, in step S242, the cleaning count N of the boat 240a is compared with the threshold value BT2a. If the cleaning count N is equal to or greater than the threshold value BT2a, it is determined that the boat 240a has reached the time when it should be immediately replaced, and the process proceeds to step S243. On the other hand, if the cleaning count N is less than the threshold value BT2a, the process proceeds to step S245.

[0099] Next, in step S243, a warning is issued to immediately replace the boat 240a. Specifically, a display prompting the replacement of the boat 240a is performed on the display unit 424.

[0100] Next, in step S244, the substrate processing using the boat 240a to be replaced is restricted. Note that this restriction of the substrate processing continues until the boat 240a is replaced. After the completion of step S244, the process proceeds to the next process. Here, the next process refers to the reaction tube 212 replacement timing determination process (step S250).

[0101] Next, in step S245, the cleaning count N of the boat 240a is compared with the threshold value BT3a. If the cleaning count N is equal to or greater than the threshold value BT3a, it is determined that the time has come to replace the boat 240a, and the process proceeds to step S246. On the other hand, if the cleaning count N is less than the threshold value BT3a, it is determined that the time to replace the boat 240a has not yet arrived, and the support replacement time determination process ends.

[0102] Next, in step S246, a notice is issued to replace the boat 240a. Specifically, a display prompting the replacement of the boat 240a is made on the display unit 424. After the end of step S246, the process proceeds to the next process. Here, the next process refers to the reaction tube 212 replacement time determination process (step S250).

[0103] (5) Process vessel replacement time determination process Next, the process vessel replacement time determination process will be described with reference to FIG. 9. As one step of the substrate processing apparatus, a process for determining the replacement time of the reaction tube 212 of the substrate processing apparatus 100 having the above-described configuration will be described. In the following description, the operations of each part constituting the substrate processing apparatus 100 are controlled by the controller 400.

[0104] When the boat 240a replacement time determination process (step S240) in the substrate processing step ends, the process vessel replacement time determination process is executed as step S250. First, in step S251 shown in FIG. 9, the lifetime cumulative film thickness value RLT of the reaction tube 212 is acquired.

[0105] Next, in step S252, the cumulative etching amount REA is acquired. Note that steps S251 and S252 may be interchanged.

[0106] Next, in step S253, the difference D between the lifetime cumulative film thickness value RLT and the cumulative etching amount REA is calculated. Specifically, the value obtained by subtracting the cumulative etching amount REA from the lifetime cumulative film thickness value RLT is calculated by the calculation unit 407.

[0107] Next, in step S254, the threshold values RT1 and RT2 for the processing container replacement determination are acquired.

[0108] Next, in step S255, the difference D is compared with the threshold value RT1. When the difference D is equal to or greater than the threshold value RT1, it is determined that the reaction tube 212 has reached the time when it should be immediately replaced, and the process proceeds to step S256. On the other hand, when the difference D is less than the threshold value RT1, the process proceeds to step S258.

[0109] Next, in step S256, a warning is issued to immediately replace the reaction tube 212. Specifically, a display prompting the replacement of the reaction tube 212 is performed on the display unit 424.

[0110] Next, in step S257, the use of the reaction tube 212 is restricted. Note that this restriction of the reaction tube 212 continues until the reaction tube 212 is replaced. When step S257 ends, the determination process for the replacement timing of the reaction tube 212 ends.

[0111] Next, in step S258, the difference D is compared with the threshold value RT2. When the difference D is equal to or greater than the threshold value RT2, it is determined that the reaction tube 212 has reached the time when it should be replaced, and the process proceeds to step S259. On the other hand, when the difference D is less than the threshold value RT2, the determination process for the replacement timing of the reaction tube 212 ends.

[0112] Next, in step S259, a caution is issued to replace the reaction tube 212. Specifically, a display prompting the replacement of the boat 240a is performed on the display unit 424. When step S259 ends, the determination process for the replacement timing of the reaction tube 212 ends.

[0113] Next, the effects of the present embodiment will be described. In this embodiment, the control unit 409 is configured to calculate the difference D between the lifetime cumulative film thickness value RLT and the cumulative etching amount REA, and to be able to determine the replacement timing of the reaction tube 212 as the processing container based on the difference D. Thus, according to this embodiment, for example, compared with determining the replacement timing of the reaction tube 212 based on a preset number of uses of the reaction tube 212, it becomes possible to accurately grasp the replacement timing of the reaction tube 212. By accurately grasping the replacement timing of the reaction tube 212 in this way, for example, it becomes possible to delay the replacement timing of the reaction tube 212 and extend the usage period of the reaction tube 212.

[0114] In this embodiment, since the control unit 409 includes the calculation unit 407 and the determination unit 408, for example, compared with the case where the calculation unit 407 and the determination unit 408 are provided separately, the configuration of the control unit 409 can be simplified.

[0115] In this embodiment, the threshold value RT1 or the threshold value RT2 preset by the determination unit 408 is compared with the difference D to determine the replacement timing of the reaction tube 212, and the determination result by the determination unit 408 may be notified by the control unit 409. When a threshold value is set in this way to determine the replacement timing of the reaction tube 212 by the determination unit 408, it becomes possible to more accurately grasp the replacement timing of the reaction tube 212. Further, since the determination result by the determination unit 408 is notified, it becomes easier to grasp the replacement timing.

[0116] In this embodiment, the threshold value RT1 may indicate a caution state of the replacement timing in the reaction tube 212, that is, notify that the initial stage of the replacement timing of the reaction tube 212 has been reached as a caution. In this case, it becomes possible to prepare the reaction tube 212 for replacement in advance.

[0117] In this embodiment, the threshold value RT2 may indicate a warning state of the replacement timing in the reaction tube 212, that is, notify a warning that the middle stage of the replacement timing of the reaction tube 212 has been reached. In this case, it becomes possible to immediately replace the processing container prepared in the caution state, contributing to reducing the time of waiting for the replacement processing container.

[0118] In this embodiment, the control unit 409 may control the boat 240 to be carried into the reaction tube 212 in a state where the boat 240 supports the substrate S and process the substrate S. In this case, it becomes possible to process a plurality of substrates S simultaneously.

[0119] In this embodiment, the determination unit 408 may determine the replacement timing of the boat 240 based on the number of times N that the cleaning process has been performed on the boat 240, and the control unit 409 may notify the determination result by the determination unit 408. In this case, since the cleaning count N is used to obtain the replacement timing of the boat 240, the execution of substrate processing using the boat 240 in a state where it can no longer withstand substrate processing is restricted, and it becomes possible to suppress the occurrence of defective substrates due to damage to the boat 240.

[0120] In this embodiment, when the determination unit 408 determines that the reaction tube 212 is at the replacement timing, the control unit 409 may control the display unit 424 to display a display indicating the replacement of the reaction tube 212. In this case, by displaying on the display unit 424 that the reaction tube 212 is at the replacement timing, it becomes possible to make the operator recognize that the reaction tube 212 has reached the replacement timing, and the operator can prepare for the replacement of the next reaction tube 212.

[0121] In this embodiment, each threshold value may be settable using the operation unit 423. In this case, it becomes possible to set a threshold value according to individual conditions with the operation unit 423, and it becomes possible to extend the usable period of the reaction tube 212.

[0122] In this embodiment, the storage unit 403 may store at least the lifetime cumulative film thickness value RLT and the cumulative etching amount REA. In this case, since information for grasping the replacement timing of the reaction tube 212 is stored in the storage unit 403, even when the substrate processing apparatus 100 is restarted, various information is stored, and it becomes possible to perform work without collecting various information.

[0123] In this embodiment, the control unit 409 may control the display of the replacement timing of the reaction tube 212 displayed on the display unit 424 to be different before and after the difference D exceeds the threshold value BT1 and the threshold value BT2. In this case, by switching the display of caution and warning displayed on the display unit 424, the operator can accurately grasp the preparation and replacement timing of the reaction tube 212, so that it becomes possible to perform efficient preparation and replacement work of the reaction tube 212.

[0124] In this embodiment, the control unit 409 may control to perform a cleaning process in a state where the boat 240 is carried into the reaction tube 212. In this case, since the reaction tube 212 and the boat 240 are simultaneously cleaned, it becomes easy to manage the etching amount for the film adhering to the reaction tube 212 and the boat 240.

[0125] In this embodiment, the control unit 409 may control to perform a cleaning process in a state where the boat 240 does not support the substrate S. In this case, for example, it becomes possible to avoid the influence on the processed substrate S as compared with the case where the cleaning process is performed in a state where the boat 240 supports the substrate S.

[0126] In this embodiment, the control unit 409 may control to perform a cleaning process in a state where the boat 240 is carried out from the reaction tube 212. In this case, for example, as compared with the case where the cleaning process is performed in a state where the boat 240 is carried into the reaction tube 212, it becomes possible to perform etching only on the reaction tube 212 while avoiding the influence on the boat 240.

[0127] In this embodiment, when the reaction tube 212 is replaced, the storage unit 403 may be controlled by the control unit 409 so that the lifetime cumulative film thickness value RLT and the cumulative etching amount REA of the reaction tube 212 are each cleared (zero-cleared). In this case, by clearing the information of the reaction tube 212 before replacement stored in the storage unit 403, it becomes possible to correctly set the information of the reaction tube 212 after replacement. Also, when the reaction tube 212 is over-etched by the cleaning process, the storage unit 403 may be controlled by the control unit 409 so that the lifetime cumulative film thickness value RLT and the cumulative etching amount REA are each cleared (zero-cleared). The fact that the reaction tube 212 is over-etched means that the deposits adhering to the reaction tube 212 have disappeared, which is equivalent to the case where the reaction tube 212 is replaced. Therefore, when the reaction tube 212 is over-etched, by clearing the lifetime cumulative film thickness value RLT and the cumulative etching amount REA respectively, it becomes possible to correctly set the information of the reaction tube 212 after over-etching.

[0128] In this embodiment, when the boat 240 is replaced, the storage unit 403 may be controlled by the control unit 409 so that the cumulative film thickness value BCT and the cleaning times N of the boat 240 are each cleared. In this case, by clearing the information of the boat 240 before replacement stored in the storage unit 403, it becomes possible to correctly set the information of the boat 240 after replacement.

[0129] (Other embodiments) In the foregoing embodiment, the apparatus is operated with the substrates S placed on all three boats 240, but the present disclosure is not limited to this configuration. Among the three boats 240, the apparatus may be operated with the substrates S placed on two of the boats 240, or the apparatus may be operated with the substrates S placed on one of the boats 240.

[0130] Also, as an example of the substrate processing apparatus 100, the case of using one set of the reactor 200 and the transfer chamber 270 has been described, but the present disclosure is not limited thereto. For example, a plurality of sets of the reactor 200 and the transfer chamber 270 may be connected to the transfer chamber 140. Also, a plurality of reactors 200 may be provided above the transfer chamber 270. In this case, substrate processing of the substrate S can be performed in parallel by a plurality of reactors 200. Also, the plurality of reactors 200 may be rooms for performing different substrate processes. In this case, after substrate processing is performed by the first reactor 200, another substrate process may be performed by the next reactor 200.

[0131] Also, the substrate processing apparatus 100 may selectively use the boats 240 depending on the type of film to be formed on the substrate S. That is, for the boat 240 with a high usage rate, since the progress of the deposited film is fast, the cleaning process is frequently performed. On the other hand, for the boat 240 with a low usage rate, since the progress of the film is slow, the cleaning process does not have to be frequently performed.

[0132] In the above-described aspect, an example of forming a film using a batch-type substrate processing apparatus that processes a plurality of substrates at a time has been described, but the present disclosure is not limited to the above-described aspect. For example, the present disclosure can also be suitably applied when forming a film using a single-wafer-type substrate processing apparatus that processes one or several substrates at a time. Also, in the above-described aspect, an example of forming a film using a substrate processing apparatus having a hot-wall type processing furnace has been described, but the present disclosure is not limited to the above-described aspect, and can also be suitably applied when forming a film using a substrate processing apparatus having a cold-wall type processing furnace.

[0133] Even when these substrate processing apparatuses are used, each process can be performed with the same processing procedures and processing conditions as those in the above-described aspect and modified examples, and the same effects as those in the above-described aspect and modified examples can be obtained.

Description of Reference Numerals

[0134] S Substrate, 100 Substrate processing apparatus, 212 Reaction tube (an example of a processing container), 409 Control Unit RLT Lifetime Cumulative Film Thickness Value REA Cumulative Etching Amount

Claims

1. A processing chamber for processing a substrate, a control unit configured to calculate a difference between a lifetime cumulative film thickness value, which is a cumulative value of the thickness of deposits adhering to the inside of the processing chamber by the processing of the substrate, and a cumulative etching amount estimated from a cleaning process for removing the deposits, and to determine a replacement timing of the processing chamber based on the difference, A substrate processing apparatus comprising the same.

2. The control unit includes a calculation unit that calculates the difference, and a determination unit that determines a replacement timing of the processing chamber based on the difference, The substrate processing apparatus according to claim 1, which has the above components.

3. The determination unit determines the replacement timing of the processing chamber by comparing a preset threshold value with the difference, and the control unit notifies a determination result by the determination unit. The substrate processing apparatus according to claim 2.

4. The threshold value indicates a caution state of the replacement timing in the processing chamber. The substrate processing apparatus according to claim 3.

5. The threshold value indicates a warning state of the replacement timing in the processing chamber. The substrate processing apparatus according to claim 3.

6. The substrate processing apparatus further includes a support tool for supporting the substrate, and the control unit is capable of controlling to carry the substrate into the processing chamber in a state where the substrate is supported by the support tool and process the substrate. The substrate processing apparatus according to claim 2.

7. The determination unit determines a replacement timing of the support tool based on the number of times the cleaning process is performed on the support tool, and the control unit notifies a determination result by the determination unit. The substrate processing apparatus according to claim 6.

8. The substrate processing apparatus further includes a display unit that displays a processing state of the substrate, and when the determination unit determines that the processing chamber is at a replacement timing, the control unit is capable of controlling to display a display indicating replacement of the processing chamber on the display unit. The substrate processing apparatus according to claim 3.

9. The substrate processing apparatus further includes an operation unit for setting the threshold value. The substrate processing apparatus according to claim 3.

10. The substrate processing apparatus further includes a storage unit that stores at least the lifetime cumulative film thickness value and the cumulative etching amount. The substrate processing apparatus according to claim 3.

11. The control unit is capable of controlling a display indicating replacement of the processing chamber to be different before and after the difference exceeds the threshold value. The substrate processing apparatus according to claim 8.

12. The control unit is capable of controlling to perform the cleaning process with the support tool carried into the processing chamber. The substrate processing apparatus according to claim 6.

13. The control unit is capable of controlling the cleaning process to be performed in a state where the support member does not support the substrate, The substrate processing apparatus according to claim 12.

14. The control unit is capable of controlling the cleaning process to be performed in a state where the support member is carried out of the processing container, The substrate processing apparatus according to claim 6.

15. Further comprising a storage unit for storing at least the lifetime cumulative film thickness value and the cumulative etching amount, The control unit is capable of controlling to clear the lifetime cumulative film thickness value and the cumulative etching amount of the processing container from the storage unit, respectively, The substrate processing apparatus according to claim 3.

16. When the processing container is replaced or when the difference obtained by subtracting the cumulative etching amount from the lifetime cumulative film thickness value becomes negative, the control unit is capable of controlling to clear the lifetime cumulative film thickness value and the cumulative etching amount from the storage unit, respectively. The substrate processing apparatus according to claim 15.

17. The determination unit determines the replacement timing of the processing container based on a value obtained by accumulating the difference values when the difference obtained by subtracting the cumulative etching amount from the lifetime cumulative film thickness value becomes negative. The substrate processing apparatus according to claim 3.

18. Further comprising a storage unit for storing at least the cumulative film thickness value of the deposit on the support member and the number of cleaning processes of the support member, When the support member is replaced, the control unit is capable of controlling to clear the cumulative film thickness value of the support member and the number of cleaning processes from the storage unit, respectively, The substrate processing apparatus according to claim 6.

19. A step of loading a substrate into a processing container and processing the substrate, and A step of calculating a difference between a lifetime cumulative film thickness value, which is a cumulative value of the thickness of deposits attached to the inside of the processing container by the processing of the substrate, and a cumulative etching amount estimated from a cleaning process for removing the deposits, and obtaining the replacement timing of the processing container based on the difference. A method for manufacturing a semiconductor device having.

20. A procedure for loading a substrate into a processing container and processing the substrate, and A procedure for calculating a difference between a lifetime cumulative film thickness value, which is a cumulative value of the thickness of deposits attached to the inside of the processing container by the processing of the substrate, and a cumulative etching amount estimated from a cleaning process for removing the deposits, and obtaining the replacement timing of the processing container based on the difference. A program to be executed by a computer on a substrate processing apparatus.

Citation Information

Patent Citations

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