Package structure, device, and method of forming the same

Abstract

To provide a package structure including a sound-producing cell with a high yield rate and high performance.SOLUTION: A package structure includes a cover and a cell disposed in the cover. The cell includes a membrane, an actuating layer, and an anchor structure. The membrane includes a first membrane subpart and a second membrane subpart, where the first membrane subpart and the second membrane subpart are opposite to each other in the top view. The actuating layer is disposed on the first membrane subpart and the second membrane subpart in the top view direction. The membrane is anchored by the anchor structure. The first membrane subpart includes a first anchored edge which is fully or partially anchored, and edges of the first membrane subpart other than the first anchored edge are not anchored. The second membrane subpart includes a second anchored edge which is fully or partially anchored, and edges of the second membrane subpart other than the second anchored edge are not anchored.SELECTED DRAWING: Figure 21

Description

Technical Field

[0001] The present invention relates to a package structure, an apparatus, and a method for forming the same, and more particularly, to a package structure including a high yield rate and / or high performance sound generation cells, an apparatus including the package structure, a method for forming the package structure, and a method for forming the apparatus.

Background Art

[0002] Micro sound generation devices such as MEMS (Micro Electro Mechanical System) micro speakers have been rapidly developed in recent years because they can be used in various electronic devices due to their small size. For example, an MEMS micro speaker can use a thin film piezoelectric material as an actuator formed by at least one semiconductor process and a silicon-containing layer as a film. In order to make the micro speaker more widely used, the industry is working on designing a high yield rate and high performance micro speaker.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Patent Document 2

Patent Document 3

Patent Document 4

Patent Document 5

Summary of the Invention

Means for Solving the Problems

[0004] Accordingly, the main object of the present invention is to provide a package structure including a sound generation cell having a specific slit design and / or a specific recess design for enhancing yield and performance, and to provide a method for forming this package structure. The present invention provides an apparatus including this package structure, and also provides a method for forming this apparatus.

[0005] One embodiment of the present invention provides a package structure including a cover and a cell disposed within the cover. The cell includes a membrane, an active layer, and an anchor structure. The membrane includes a first membrane sub-part and a second membrane sub-part, and the first membrane sub-part and the second membrane sub-part are opposite to each other when viewed in the top view direction, and the first membrane sub-part and the second membrane sub-part are opposite to each other in a first direction perpendicular to the top view direction. The active layer is disposed on the first membrane sub-part and the second membrane sub-part in the top view direction. The membrane is fixed by the anchor structure. The first membrane sub-part includes a first fixed end that is completely or partially connected to the anchor structure in order to be completely or partially fixed by the anchor structure, and the end of the first membrane sub-part other than the first fixed end is not fixed. The second membrane sub-part includes a second fixed end that is completely or partially connected to the anchor structure in order to be completely or partially fixed by the anchor structure, and the end of the second membrane sub-part other than the second fixed end is not fixed.

[0006] Another embodiment of the present invention provides an apparatus including a housing and the above-described package structure.

[0007] Another embodiment of the present invention provides a method for forming a package structure. The forming method includes performing a manufacturing method to manufacture a cell and disposing the cell within a cover. The manufacturing method of the cell includes providing a wafer including a first layer and a second layer, and patterning the first layer of the wafer to form at least one trench line. The first layer includes a film fixed by an anchor structure of the cell, and at least one slit is formed in the film and penetrates the film by the at least one trench line. The film includes a first film sub-part and a second film sub-part, the first film sub-part and the second film sub-part are opposite to each other when viewed along the top view direction, and the first film sub-part and the second film sub-part are opposite to each other in a first direction perpendicular to the top view direction. The first film sub-part includes a first fixed end that is completely or partially connected to the anchor structure so as to be completely or partially fixed by the anchor structure, and the end of the first film sub-part other than the first fixed end is not fixed. The second film sub-part includes a second fixed end that is completely or partially connected to the anchor structure so as to be completely or partially fixed by the anchor structure, and the end of the second film sub-part other than the second fixed end is not fixed.

[0008] Another embodiment of the present invention provides a method for forming an apparatus. The forming method includes forming a package structure by the above forming method and assembling the package structure to an apparatus including a housing via a surface mounting technique.

[0009] These and other objects of the present invention will become unmistakably clear to those skilled in the art after reading the following detailed description of the preferred embodiments shown in various figures and drawings.

Brief Description of the Drawings

[0010]

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DETAILED DESCRIPTION OF THE INVENTION

[0011] To provide those skilled in the art with a better understanding of the present invention, preferred embodiments and general material or range parameters of the main components are detailed in the following description. These preferred embodiments of the present invention are shown in the accompanying drawings with numbered elements to detail their content and the effects to be achieved. It should be noted that the drawings are simplified schematic diagrams, and the material and parameter ranges of the main components are examples based on current technology to provide a clearer description of the basic structure, implementation, or operation method of the present invention, showing only the components and combinations related to the present invention. The components may actually be more complex, and the ranges of parameters or materials used may evolve according to future technological advancements. In addition, for ease of explanation, the components shown in the drawings may not represent their actual numbers, shapes, and dimensions, and the details may be adjusted according to the design requirements.

[0012] In the following description and claims, the terms "comprising", "including", and "having" are used in an open-ended form and should be interpreted to mean "including, but not limited to". Therefore, when the terms "comprising", "including", and / or "having" are used in the description of the present invention, the presence of corresponding features, regions, steps, operations, and / or components may be cited, but is not limited to the presence of one or more corresponding features, regions, steps, operations, and / or components.

[0013] In the following description and claims, when "Component B1 is formed by / from C1", C1 is present in the formation of Component B1 or C1 is used in the formation of Component B1, and the presence and use of one or more other features, regions, steps, operations, and / or components in the formation of Component B1 are not excluded.

[0014] Hereinafter, the term "horizontal direction" generally means a direction parallel to the horizontal plane, the term "horizontal plane" generally means a plane parallel to the X and Y directions in the drawing, the terms "vertical direction" and "top view direction" generally mean directions parallel to the Z direction in the drawing, and the X, Y, and Z directions are perpendicular to each other. Hereinafter, the terms "top view" and "bottom view" generally mean visual results along the vertical direction, and the term "side view" generally means a visual result along the horizontal direction.

[0015] In the following description and claims, the term "substantially" generally means that a small deviation may or may not exist. For example, the terms "substantially parallel" and "substantially along" mean that the angle between two components is at or below a specific angular threshold, such as 10 degrees, 5 degrees, 3 degrees, or 1 degree. For example, the term "substantially aligned" means that the deviation between two components can be at or below a specific difference threshold, such as 2 μm or 1 μm. For example, the term "substantially the same" means that the deviation is within 10% of a given value or range, or within 5%, 3%, 2%, 1%, or 0.5% of a given value or range.

[0016] The terms first, second, third, etc. may be used to describe various components, but such components are not limited by such terms. Such terms are used only to distinguish one component from another in the specification, and if not otherwise described in the specification, such terms have no relation to the order of manufacture. The same terms may also be used in the claims, and with respect to the order in which elements are recited, the terms first, second, third, etc. may be used. Thus, in the following description, the first component may be the second component in the claims.

[0017] Note that the technical features in the different embodiments described below can be replaced, recombined, or mixed with each other to form other embodiments without departing from the spirit of the present invention.

[0018] In the present invention, the sound generation cell can perform acoustic conversion that converts a signal (e.g., an electrical signal or other suitable type of signal) into a sound wave. In some embodiments, the sound generation cell can be a component within a sound generation device, a speaker, a micro speaker, or other suitable device for converting an electrical signal into a sound wave, without limitation. Note that the operation of the sound generation cell means that acoustic conversion is performed by the sound generation cell (e.g., the sound wave is generated by operating the sound generation cell with an electrical drive signal).

[0019] In the use of the sound generation cell, the sound generation cell can be disposed on a base. The base can be hard or flexible, and the base can include silicon, germanium, glass, plastic, quartz, sapphire, metal, polymers (e.g., polyimide (PI), polyethylene terephthalate (PET)), any other suitable material, or a combination thereof. As an example, the base can be a circuit board including a laminate (e.g., a copper-clad laminate, CCL), a land grid array (LGA) substrate, or any other suitable substrate including a conductive material, without limitation. Note that the normal direction of the base can be parallel to the Z direction in the drawing.

[0020] Referring to FIGS. 1 and 2, FIG. 1 is a schematic top view showing a sound generation cell according to a first embodiment of the present invention, and FIG. 2 is an enlarged schematic view showing the structure of region R1 in FIG. 1. As shown in FIG. 1, the sound generation cell 100 includes a membrane 110 and at least one anchor structure 120 outside the membrane 110, and the membrane 110 is connected to the anchor structure 120 so as to be fixed by the anchor structure 120. For example, the membrane 110 can be surrounded by the anchor structure 120, without limitation.

[0021] In the operation of the sound generation cell 100, the membrane 110 can be actuated to move. In this embodiment, the membrane 110 is actuated and can be moved in the upward and downward directions, although not limited thereto. In the present invention, the terms "move upward" and "move downward" indicate that the membrane 110 moves substantially along the direction Z. During the operation of the sound generation cell 100, the anchor structure 120 can be fixed. That is, the anchor structure 120 can be a fixed end (or fixed edge) with respect to the membrane 110 during the operation of the sound generation cell 100.

[0022] The shape of the membrane 110 can be designed based on requirements. In some embodiments, the shape of the membrane 110 can be, although not limited to, a polygon (i.e., a rectangle or a chamfered rectangle), a shape with curved ends, or other suitable shapes. For example, the shape of the membrane 110 shown in FIG. 1 can be a chamfered rectangle, but is not limited to such a configuration.

[0023] The membrane 110 and the anchor structure 120 can include any suitable material. In some embodiments, the membrane 110 and the anchor structure 120 can individually include, although not limited to, silicon (e.g., single-crystalline silicon or polycrystalline silicon), silicon compounds (e.g., silicon carbide or silicon oxide), germanium, germanium compounds (e.g., gallium nitride or gallium arsenide, etc.), gallium, gallium compounds, or combinations thereof. The materials of the membrane 110 and the anchor structure 120 can be the same or different.

[0024] In the present invention, the membrane 110 may include a plurality of sub-parts. As shown in FIG. 1, the membrane 110 includes a first membrane sub-part 112 and a second membrane sub-part 114, and the first membrane sub-part 112 and the second membrane sub-part 114 are opposite to each other when viewed from above (that is, the first membrane sub-part 112 and the second membrane sub-part 114 are opposite to each other in a horizontal direction (for example, the direction Y) perpendicular to the top view direction (that is, the direction Z)). Only one end of the first membrane sub-part 112 is fixed by being connected to the anchor structure 120, and only one end of the second membrane sub-part 114 is fixed by being connected to the anchor structure 120. The other ends of the first membrane sub-part 112 and the second membrane sub-part 114 are not fixed and are not connected to the anchor structure 120 (hereinafter, these ends are referred to as "non-fixed ends"). That is, in FIG. 1, the first fixed end 112a of the first membrane sub-part 112 is the only fixed end of the first membrane sub-part 112, and the second fixed end 114a of the second membrane sub-part 114 is the only fixed end of the second membrane sub-part 114. The first membrane sub-part 112 is directly connected to the anchor structure 120 only through the first fixed end 112a, and the second membrane sub-part 114 is directly connected to the anchor structure 120 only through the second fixed end 114a. In the present invention, the first fixed end 112a and the second fixed end 114a may be completely or partially fixed. For example, in the embodiment shown in FIG. 1, the first fixed end 112a and the second fixed end 114a are completely fixed.

[0025] As shown in FIG. 1, the membrane 110 has a plurality of slits SL, and the membrane 110 may be divided into sub-parts by the slits SL. In the present invention, the slits SL may have at least one linear pattern, at least one curved pattern, or a combination thereof, and the width of the slits SL must be small enough. For example, the width of the slits SL may be in the range of 1 μm to 5 μm, although not limited.

[0026] In FIGS. 1 and 2, the membrane 110 may have a first slit SL1, at least one second slit SL2, and at least one third slit SL3. The first slit SL1 is formed between the first membrane sub-part 112 and the second membrane sub-part 114. The second slit SL2 is formed between the first membrane sub-part 112 and the anchor structure 120. The third slit SL3 is formed between the second membrane sub-part 114 and the anchor structure 120. The end of the second slit SL2 may be located in the corner region CR of the membrane 110 (shown in FIG. 2), and the end of the third slit SL3 may be located in another corner region CR of the membrane 110. For example, in FIG. 1, the membrane 110 may have one linear first slit SL1, two second slits SL2, and two third slits SL3. The first membrane sub-part 112 may be between the two second slits SL2 when viewed from above, and the second membrane sub-part 114 may be between the two third slits SL3 when viewed from above, but it is not limited to such a configuration.

[0027] In FIG. 1, the free ends of each sub-part can be obtained by the slit SL. Regarding the first membrane sub-part 112, the first free end 112n1 on the opposite side of the first fixed end 112a when viewed from above is defined by the first slit SL1, and the second free end 112n2 adjacent to the first fixed end 112a is defined by the second slit SL2. Regarding the second membrane sub-part 114, the third free end 114n3 on the opposite side of the second fixed end 114a when viewed from above is defined by the first slit SL1, and the fourth free end 114n4 adjacent to the second fixed end 114a may be defined by the third slit SL3.

[0028] In the present invention, the shape of the sub-parts of the membrane 110 may be designed based on requirements, and the shape of the sub-parts of the membrane 110 can be a polygon (i.e., a rectangle), a shape with curved ends, or other suitable shapes. For example, in FIG. 1, the shape of the first membrane sub-part 112 and the shape of the second membrane sub-part 114 are substantially rectangular, and the first membrane sub-part 112 and the second membrane sub-part 114 may substantially coincide, but are not limited thereto. Therefore, in FIG. 1, the second non-fixed end 112n2 may be adjacent to and between the first non-fixed end 112n1 and the first fixed end 112a, and the fourth non-fixed end 114n4 may be adjacent to and between the third non-fixed end 114n3 and the second fixed end 114a, but is not limited to such a configuration. In FIG. 1, the second slit SL2 and the third slit SL3 are connected to the first slit SL1. For example, the first slit SL1 can be connected between two second slits SL2 and between two third slits SL3, but is not limited thereto.

[0029] Since the shape of the first membrane sub-part 112 and the shape of the second membrane sub-part 114 can be substantially rectangular, the first fixed end 112a, the first non-fixed end 112n1, the second fixed end 114a, and the third non-fixed end 114n3 are substantially parallel to each other, have substantially the same length, and the second non-fixed end 112n2 and the fourth non-fixed end 114n4 are substantially parallel to each other (i.e., parallel to the direction X) and can have substantially the same length. That is, the first slit SL1 defining the first non-fixed end 112n1 and the third non-fixed end 114n3 is parallel to the first fixed end 112a and the second fixed end 114a.

[0030] In some embodiments, in FIG. 1, the second slit SL2 and the third slit SL3 can be connected such that the second slit SL2 and the third slit SL3 are combined to form a long straight slit, but are not limited to such a configuration.

[0031] As shown in FIG. 1, the first fixed end 112a of the first membrane sub-part 112 is one of the ends of the membrane 110, and the second fixed end 114a of the second membrane sub-part 114 is another end of the ends of the membrane 110. The second non-fixed end 112n2 of the first membrane sub-part 112 may or may not be one of the ends of the membrane 110, and the fourth non-fixed end 114n4 of the second membrane sub-part 114 may or may not be one of the ends of the membrane 110. For example, in FIG. 1, when viewed from above, the second slit SL2 is between the first membrane sub-part 112 and one of the ends of the membrane 110, and when viewed from above, the third slit SL3 is between the second membrane sub-part 114 and one of the ends of the membrane 110. Thus, the second non-fixed end 112n2 of the first membrane sub-part 112 may not be the end of the membrane 110, and the fourth non-fixed end 114n4 of the second membrane sub-part 114 may not be the end of the membrane 110, but the configuration is not limited to this.

[0032] Note that the slit SL may release the residual stress of the membrane 110, and the residual stress may occur during the manufacturing process of the membrane 110 or originally exist in the membrane 110.

[0033] The sound generation cell 100 may include an actuating layer 130 disposed on the membrane 110 in the Z direction and configured to actuate the membrane 110. In some embodiments, as shown in FIG. 1, the actuating layer 130 may not completely overlap the membrane 110 when viewed from above. For example, in FIG. 1, the actuating layer 130 is disposed on the first membrane sub-part 112 and the second membrane sub-part 114, and the actuating layer 130 may overlap a part of the first membrane sub-part 112 and a part of the second membrane sub-part 114 when viewed from above. Optionally, in FIG. 1, the actuating layer 130 is disposed on and overlaps the anchor structure 120, and the actuating layer 130 may overlap the fixed end of the sub-part of the membrane 110, but the configuration is not limited to this.

[0034] As shown in FIG. 1, in order to enhance the reliability of the slit SL and the actuating layer 130, when viewed from above, a distance may exist between the actuating layer 130 and the slit SL, but the configuration is not limited to this.

[0035] The actuating layer 130 may include an actuator having a monotonic electromechanical conversion function with respect to the movement of the membrane 110 along the direction Z. In some embodiments, the actuating layer 130 may include, but is not limited to, a piezoelectric actuator, an electrostatic actuator, a nanoscale electrostatic drive (NED) actuator, an electromagnetic actuator, or any other suitable actuator. For example, in one embodiment, the actuating layer 130 may include a piezoelectric actuator, which may include two electrodes, a piezoelectric material layer (e.g., lead zirconate titanate, PZT) disposed between the electrodes, etc., and the piezoelectric material layer may actuate the membrane 110 based on a drive signal (e.g., a drive voltage) received by the electrodes, but is not limited to such a configuration. For example, in another embodiment, the actuating layer 130 may include an electromagnetic actuator (e.g., a planar coil), and the electromagnetic actuator may actuate the membrane 110 based on a received drive signal (e.g., a drive current) and a magnetic field (i.e., the membrane 110 may be actuated by an electromagnetic force), but is not limited to such a configuration. For example, in yet another embodiment, the actuating layer 130 may include an electrostatic actuator (e.g., a conductive plate) or an NED actuator, and the electrostatic actuator or the NED actuator may actuate the membrane 110 based on a received drive signal and an electrostatic field (i.e., the membrane 110 may be actuated by an electrostatic force), but is not limited to such a configuration.

[0036] The membrane 110 is actuated by the actuating layer 130 to move along the direction Z, thereby performing acoustic conversion. That is, a sub-part of the membrane 110 is actuated to perform up and down movement so that acoustic conversion is performed. Note that sound waves are generated by the movement of the membrane 110 actuated by the actuating layer 130, and the movement of the membrane 110 is related to the sound pressure level (SPL) of the sound waves.

[0037] When the sub - part moves vertically, an opening in the Z - direction is formed and can be adjacent to all non - fixed ends. For example, in the operation of the sound - generating cell 100, a central opening is formed between the first non - fixed end 112n1 of the first membrane sub - part 112 and the third non - fixed end 114n3 of the second membrane sub - part 114, and side openings can be formed between the second non - fixed end 112n2 of the first membrane sub - part 112 and the anchor structure 120 and between the fourth non - fixed end 114n4 of the second membrane sub - part 114 and the anchor structure 120, respectively.

[0038] The sub - parts of the membrane 110 move along the same direction or opposite directions based on requirements. In some embodiments, the first membrane sub - part 112 and the second membrane sub - part 114 can move vertically in synchronization in the Z - direction (i.e., the first membrane sub - part 112 and the second membrane sub - part 114 can be actuated to move in the same direction) to avoid forming a large central opening between the first membrane sub - part 112 and the second membrane sub - part 114, but is not limited to such a configuration.

[0039] The actuation layer 130 can actuate the membrane 110 to generate sound waves based on the received drive signal. The sound waves correspond to the input audio signal, and the drive signal applied to the actuation layer 130 corresponds to (is related to) the input audio signal.

[0040] Note that the short side of the sound - generating cell 100 (or the membrane 110) is advantageous for obtaining a higher resonance frequency, and the long side of the sound - generating cell 100 (or the membrane 110) can be advantageous for increasing the SPL. That is, a sound - generating cell 100 (or a membrane 110) with a large aspect ratio, which is the ratio of the length of the long side to the length of the short side, can achieve both a higher resonance frequency and a larger SPL compared to a cell with a small aspect ratio. The aspect ratio of the sound - generating cell 100 (or the membrane 110) can depend on practical requirements. For example, to enhance the performance of the sound - generating cell 100, the aspect ratio of the sound - generating cell 100 (or the membrane 110) may be greater than 2, but is not limited to such a configuration.

[0041] Hereinafter, the details of the manufacturing method of the sound generation cell 100 will be further exemplified and described. In the following manufacturing method, the active layer 130 of the sound generation cell 100 may include, for example, a piezoelectric actuator, but is not limited to such a configuration. The active layer 130 of the sound generation cell 100 can include any suitable type of actuator.

[0042] In the following manufacturing method, the formation process may include atomic layer deposition (ALD), chemical vapor deposition (CVD), and other suitable processes or combinations thereof. The patterning process may include photolithography, an etching process, any other suitable process, or combinations thereof.

[0043] Referring to FIGS. 3 to 8, FIGS. 3 to 8 are schematic diagrams showing the structures in different steps of the manufacturing method of the sound generation cell according to an embodiment of the present invention. In this embodiment, the sound generation cell 100 can be manufactured by at least one semiconductor process so as to be, but not limited to, a MEMS chip. As shown in FIG. 3, a wafer WF is prepared, and the wafer includes a first layer WL1 and a second layer WL2, and may optionally include an insulating layer WL3 between the first layer WL1 and the second layer WL2.

[0044] The first layer WL1, the insulating layer WL3, and the second layer WL2 can each include any suitable material so that the wafer WF becomes any suitable type. For example, the first layer WL1 and the second layer WL2 can each include, but are not limited to, silicon (e.g., single-crystalline silicon or polycrystalline silicon), silicon compounds (e.g., silicon carbide, silicon oxide), germanium compounds, gallium, gallium compounds (e.g., gallium nitride, gallium arsenide), or combinations thereof. In some embodiments, the first layer WL1 may include single-crystalline silicon so that the wafer WF becomes a silicon-on-insulator (SOI) wafer, but is not limited to such a configuration. For example, the insulating layer WL3 can include, but is not limited to, an oxide such as silicon oxide (e.g., silicon dioxide). The thicknesses of the first layer WL1, the insulating layer WL3, and the second layer WL2 can be individually adjusted based on requirements.

[0045] In FIG. 3, a compensation oxide layer CPS may optionally be formed on the upper side of the wafer WF, where the upper side is above the upper surface WL1a of the first layer WL1 opposite to the second layer WL2, and the first layer WL1 is between the compensation oxide layer CPS and the second layer WL2. The material of the oxide contained in the compensation oxide layer CPS and the thickness of the compensation oxide layer CPS can be designed based on requirements.

[0046] In FIG. 3, a first conductive layer CT1 and an active material AM are sequentially formed on the upper side of the wafer WF (on the first layer WL1), and the first conductive layer CT1 may be between the active material AM and the first layer WL1. In some embodiments, the first conductive layer CT1 may be in contact with the active material AM.

[0047] The first conductive layer CT1 includes any suitable conductive material, and the active material AM may include any suitable material. In some embodiments, the first conductive layer CT1 includes a metal (such as platinum), and the active material AM may include a piezoelectric material, but is not limited to such a configuration. For example, the piezoelectric material may include, but is not limited to, a lead zirconate titanate (PZT) material, etc. Furthermore, the thicknesses of the first conductive layer CT1 and the active material AM can be individually adjusted based on requirements.

[0048] Next, in FIG. 3, the active material AM, the first conductive layer CT1, and the compensation oxide layer CPS can be sequentially patterned.

[0049] As shown in FIG. 4, a separation insulating layer SIL can be formed on the active material AM and patterned. The thickness and the material of the separation insulating layer SIL can be designed based on requirements. For example, the material of the separation insulating layer SIL can be, but is not limited to, an oxide.

[0050] As shown in FIG. 4, a second conductive layer CT2 is formed on the actuating material AM and the separation insulating layer SIL, and then the second conductive layer CT2 can be patterned. The thickness of the second conductive layer CT2 and the material of the second conductive layer CT2 can be designed based on requirements. For example, the second conductive layer CT2 can include, but is not limited to, a metal (such as platinum). For example, the second conductive layer CT2 can be in contact with the actuating material AM.

[0051] The actuating material AM, the first conductive layer CT1, and the second conductive layer CT2 can be sub-layers within the actuating layer 130 of the sound generation cell 100 such that the actuating layer 130 includes a piezoelectric actuator having two electrodes and the actuating material AM is between the two electrodes (for example, the first conductive layer CT1 and the second conductive layer CT2 function as the first electrode and the second electrode, respectively, in the actuating layer 130).

[0052] In FIG. 4, the separation insulating layer SIL can be configured to separate at least a part of the first conductive layer CT1 from at least a part of the second conductive layer CT2.

[0053] As shown in FIG. 5, the first layer WL1 of the wafer WF can be patterned to form the trench line TL. In FIG. 5, the trench line TL is the part where the first layer WL1 is removed. That is, the trench line TL is between two parts of the first layer WL1.

[0054] As shown in FIG. 6, the wafer WF is disposed on the substrate SB and the adhesive layer AL, and the adhesive layer AL is adhered between the substrate SB and the first layer WL1 of the wafer WF. In FIG. 6, the actuating layer 130 is between the wafer WF and the substrate SB. By this step, the first layer WL1 of the wafer WF and the structure above the wafer WF (that is, the structure above the upper surface WL1a of the wafer WF) can be protected in subsequent steps.

[0055] As shown in FIG. 7, the second layer WL2 of the wafer WF can be patterned such that the second layer WL2 forms an anchor structure 120 and the first layer WL1 forms a film 110 fixed to the anchor structure 120. Specifically, the second layer WL2 of the wafer WF has a first portion and a second portion, the first portion of the second layer WL2 is removed, and the second portion of the second layer WL2 can form the anchor structure 120. Since the first portion of the second layer WL2 is removed, the first layer WL1 forms the film 110, and the film 110 corresponds to the removed first portion of the second layer WL2 when viewed from above. For example, the first portion of the second layer WL2 can be removed by a reactive ion etching (DRIE) process, although not limited thereto. Note that sub-parts of the film 110 (e.g., the first film sub-part 112 and the second film sub-part 114) are determined when patterning the first layer WL1 of the wafer WF to form the trench line TL.

[0056] Optionally, in FIG. 7, since there is an insulating layer WL3 of the wafer WF, after patterning the second layer WL2 of the wafer WF, a part of the insulating layer WL3 corresponding to the first portion of the second layer WL2 can be removed such that the first layer WL1 forms the film 110, but the configuration is not limited thereto.

[0057] Furthermore, in FIG. 7, the second portion of the second layer WL2, the portion of the insulating layer WL3 overlapping the second portion of the second layer WL2, and the portion of the first layer WL1 overlapping the second portion of the second layer WL2 can be combined to function as the anchor structure 120.

[0058] As shown in FIG. 8, the manufacturing of the sound generation cell 100 is completed by removing the substrate SB and the adhesive layer AL by an appropriate process. For example, the substrate SB and the adhesive layer AL can be removed by a peeling process, although not limited thereto.

[0059] In FIG. 8, since the first portion of the second layer WL2 is removed to form the film 110 included in the first layer WL1, a slit SL is formed in the film 110 by the trench line TL and penetrates the film. Since the slit SL is formed by the trench line TL, the width of the trench line TL can be designed based on the requirements of the slit SL. For example, the width of the trench line TL, although not limited, can be 5 μm or less, 3 μm or less, or 2 μm or less so that the slit SL has a desired width.

[0060] The sound generation cell and the method for manufacturing the same according to the present invention are not limited to the above-described embodiments. Other embodiments of the present invention will be described below. For ease of comparison, the same reference numerals are assigned to the same components below. The following description relates to the differences between the embodiments, and repeated descriptions of overlapping parts will not be given.

[0061] Referring to FIGS. 9 and 10, FIG. 9 is a schematic top view showing a sound generation cell according to a second embodiment of the present invention, and FIG. 10 is an enlarged schematic view showing the structure of the region R2 in FIG. 9. As shown in FIGS. 9 and 10, the difference between the present embodiment and the first embodiment is that the sound generation cell 200 of the present embodiment includes a recessed structure RS disposed at the corners of the sound generation cell 200 and outside the film 110, and the recessed structure RS is directly connected to the slit section SLs in the corner region CR of the film 110. In the embodiment shown in FIG. 9, the sound generation cell 200 may include, although not limited to, four recessed structures RS disposed at the four corners of the sound generation cell 200 and outside the film 110.

[0062] The slit section SLs in the corner region CR may be the slit SL connected to the second slit SL2 or the third slit SL3, or the slit section SLs in the corner region CR may be a part of the second slit SL2 or a part of the third slit SL3. The slit section SLs may have a curved pattern, a linear pattern, or a combination thereof. For example, in FIG. 10, the slit section SLs are connected between the end of the second slit SL2 located in the corner region CR and the recessed structure RS, and the slit section SLs may have, although not limited to, a curved pattern.

[0063] As shown in FIGS. 9 and 10, the recessed structure RS can be formed on the anchor structure 120 and at the corners of the sound generation cell 200. For example, the sound generation cell 200 has a first layer WL1 and a second layer WL2 disposed under the first layer WL1 (e.g., FIG. 8), a part of the first layer WL1 is configured to function as the membrane 110 (i.e., the first layer WL1 may include the membrane 110), another part of the first layer WL1 surrounds the membrane 110 and is combined with the second layer WL2 to form the anchor structure 120, the slit sections SLs in the corner region CR of the membrane 110 pass through the first layer WL1, the recessed structure RS passes through the first layer WL1, and may have a bottom belonging to the anchor structure 120 (e.g., the second layer WL2), but is not limited to such a configuration. In this case, regarding the manufacturing method of the sound generation cell 200, the slit SL and the recessed structure RS of the membrane 110 can be patterned (etched) by the same process (the same etching process).

[0064] As shown in FIGS. 9 and 10, the recessed structure RS may have a curved pattern, and the curved pattern of the recessed structure RS can be designed based on requirements. For example, in FIG. 10, the slit sections SLs in the corner region CR and the recessed structure RS can be combined to form a semi-circular arc pattern, but is not limited to such a configuration.

[0065] The presence of the curved recessed structure RS connected to the slit sections SLs located in the corner region CR can increase the success rate of the manufacturing process of the sound generation cell 200, so the yield rate of the sound generation cell 200 is increased. Specifically, in the process of removing the substrate SB and the adhesive layer AL (e.g., the peeling process), due to the presence of the curved recessed structure RS connected to the slit sections SLs located in the corner region CR, the stress concentration position is changed from the corner region CR of the membrane 110 (e.g., the end of the slit SL) to the recessed structure RS, and the stress applied to the recessed structure RS can be dispersed, so the damage to the membrane 110 in this process can be reduced. Further, since the recessed structure RS has a curved pattern, the stress applied to the recessed structure RS can be effectively dispersed in this process, so the damage to the recessed structure RS is reduced and the success rate of the manufacturing process of the sound generation cell 200 is increased.

[0066] Referring to FIG. 11, FIG. 11 is a schematic top view showing a sound generation cell according to a third embodiment of the present invention. As shown in FIG. 11, the difference between this embodiment and the first embodiment is that the membrane 110 of the sound generation cell 300 of this embodiment includes a latch structure 310. Under the condition that the first membrane sub-part 112 and the second membrane sub-part 114 move along the direction Z (that is, the normal direction of the base on which the membrane 110 is disposed), the latch structure 310 is configured to move the first membrane sub-part 112 along the direction Z when the moving distance of the first membrane sub-part 112 along the direction Z and the moving distance of the second membrane sub-part 114 along the direction Z are greater than a threshold value. And the second membrane sub-part 114 can be locked. That is, the latch structure 310 is configured to limit the moving distances of the first membrane sub-part 112 and the second membrane sub-part 114.

[0067] Since there is only one fixed end in the sub-part of the membrane 110, the sub-part of the membrane 110 is easily broken and may be damaged in the manufacturing process. In this embodiment, the presence of the latch structure 310 increases the success rate of manufacturing the membrane 110 and the yield rate of the sound generation cell 300. Specifically, in the process of removing the substrate SB and the adhesive layer AL (for example, the peeling process), the displacement of the first membrane sub-part 112 in the direction Z and the displacement of the second membrane sub-part 114 are caused by the adhesive force of the adhesive layer AL. In this case, when the first membrane sub-part 112 and the second membrane sub-part 114 move along the direction Z with a displacement exceeding the threshold value, the latch structure 310 locks the first membrane sub-part 112 and the second membrane sub-part 114 to limit the movement of the first membrane sub-part 112 and the second membrane sub-part 114, and provides a restoring force for the first membrane sub-part 112 and the second membrane sub-part 114 to reduce the damage of the membrane 110.

[0068] The latch structure 310 may have any suitable design based on requirements. In this embodiment, the latch structure 310 shown in FIG. 11 may be formed by slits SL. For example, in FIG. 11, the latch structure 310 is formed by two first slits SL1 and three fourth slits SL4 and SL4'. The first slits SL1 and the fourth slits SL4 and SL4' are between the first membrane sub-part 112 and the second membrane sub-part 114, and the three fourth slits SL4 and SL4' may be connected between the two first slits SL1. In FIG. 11, the first slits SL1 may be parallel to each other, but are not limited to such a configuration. In FIG. 11, the fourth slit SL4' extending along the direction X is connected between the two fourth slits SL4 extending along the direction Y, and the fourth slit SL4 extending along the direction Y may be connected between the fourth slit SL4' extending along the direction X and the first slit SL1 extending along the direction X, but is not limited to such a configuration.

[0069] As shown in FIG. 11, the latch structure 310 includes a first latch component 312 and a second latch component 314. The first latch component 312 is a part of the first membrane sub-part 112 (equally, the first latch component 312 may belong to the first membrane sub-part 112), and the second latch component 314 may be a part of the second membrane sub-part 114 (equally, the second latch component 314 may belong to the second membrane sub-part 114). In FIG. 11, the first latch component 312 is disposed between the second latch component 314 of the second membrane sub-part 114 and another part of the second membrane sub-part 114, and the second latch component 314 may be disposed between the first latch component 312 of the first membrane sub-part 112 and another part of the first membrane sub-part 112. For example, in FIG. 11, the length direction of the first latch component 312 and the length direction of the second latch component 314 may be substantially parallel to the direction X, but are not limited to such a configuration.

[0070] When the first membrane sub - part 112 and the second membrane sub - part 114 move along the direction Z with a displacement greater than the threshold value, the first latch component 312 buckles onto the second latch component 314, locking the first membrane sub - part 112 and the second membrane sub - part 114. Note that the width of the slit SL and the size of the latch component are related to the buckling effect of the latch structure 310.

[0071] Referring to FIG. 12, FIG. 12 is a schematic top view showing a sound - generating cell according to a fourth embodiment of the present invention. As shown in FIG. 12, the difference between this embodiment and the first embodiment is that the membrane 110 of the sound - generating cell 400 in this embodiment includes at least one spring connected between sub - parts of the membrane 110, and the number of springs can be designed based on requirements. In FIG. 12, the membrane 110 may include a first spring SPR1 directly connected between the first membrane sub - part 112 and the second membrane sub - part 114.

[0072] Due to the presence of the first spring SPR1, the success rate of manufacturing the membrane 110 can be increased, and the yield rate of the sound - generating cell 400 can be increased. Specifically, in the process of removing the substrate SB and the adhesive layer AL, the displacement of the first membrane sub - part 112 and the displacement of the second membrane sub - part 114 along the direction Z are caused by the adhesive force of the adhesive layer AL. When the first membrane sub - part 112 and the second membrane sub - part 114 move along the direction Z with a large displacement, the first spring SPR1 restricts the movement of the first membrane sub - part 112 and the second membrane sub - part 114, and by applying a restoring force to the first membrane sub - part 112 and the second membrane sub - part 114, the damage to the membrane 110 can be reduced.

[0073] The spring may have an appropriate design based on requirements. As shown in FIG. 12, the first spring SPR1 may be formed by a slit SL. In the present embodiment, the first spring SPR1 shown in FIG. 12 is formed by two first slits SL1 and two fifth slits SL5, and the fifth slit SL5 is connected to the first slit SL1, and the fifth slit SL5 may have a curved pattern. For example, the fifth slit SL5 may include a hook-shaped curved pattern, and one end of the fifth slit SL5 is not connected to another slit SL, but is not limited to such a configuration. For example, the first slits SL1 may be parallel to each other, but are not limited to such a configuration.

[0074] When the membrane 110 moves, the stress caused by the deformation of the membrane 110 may be applied to the spring. In FIG. 12, since the fifth slit SL5 includes a curved pattern (i.e., a hook-shaped curved pattern), the effect of stress concentration is reduced, and the damage to the membrane 110 and the first spring SPR1 is reduced, so the yield rate of the sound generation cell 400 may be increased.

[0075] In addition, as shown in FIG. 12, the connection direction from the first spring SPR1 to the first membrane sub-part 112 may be different from the connection direction from the first spring SPR1 to the second membrane sub-part 114. For example, in FIG. 12, the connection direction from the first spring SPR1 to the first membrane sub-part 112 may be opposite to the connection direction from the first spring SPR1 to the second membrane sub-part 114, but is not limited to such a configuration. For example, in FIG. 12, the first spring SPR1 may be substantially in the shape of an I, but is not limited to such a configuration.

[0076] Referring to FIG. 13, FIG. 13 is a schematic top view showing a sound generation cell according to a fifth embodiment of the present invention. As shown in FIG. 13, the difference between this embodiment and the fourth embodiment lies in the design of the first spring SPR1. In FIG. 13, the first spring SPR1 of the membrane 110 of the sound generation cell 500 is formed by two second slits SL1, two fifth slits SL5 and a sixth slit SL6. The two fifth slits SL5 are connected to the same first slit SL1, the sixth slit SL6 is connected to another first slit SL1, the fifth slit SL5 has two curved patterns and one straight pattern, the sixth slit SL6 is between the two fifth slits SL5 and may have a curved pattern. For example, the fifth slit SL5 may include a hook-shaped curved pattern, and one end of the fifth slit SL5 is not connected to other slits SL, but is not limited to such a configuration.

[0077] In addition, in the first spring SPR1 shown in FIG. 13, the connection direction from the first spring SPR1 to the first membrane sub-part 112 may be the same as the connection direction from the first spring SPR1 to the second membrane sub-part 114, but is not limited to such a configuration. For example, in FIG. 13, the first spring SPR1 may be substantially U-shaped, but is not limited to such a configuration. With this design, the size of the central opening between the first membrane sub-part 112 and the second membrane sub-part 114 is reduced, and air leakage in the operation of the sound generation cell 500 can be reduced.

[0078] When the membrane 110 moves, the stress caused by the deformation of the membrane 110 can be applied to the spring. In FIG. 13, due to the design of the U-shaped first spring SPR1 with curved slits SL, the effect of stress concentration is reduced, and damage to the membrane 110 and the first spring SPR1 is reduced, so the yield rate of the sound generation cell 500 can be increased.

[0079] Referring to FIGS. 14 and 15, FIG. 14 is a schematic top view showing a sound generation cell according to a sixth embodiment of the present invention, and FIG. 15 is an enlarged schematic view showing the structure of region R3 in FIG. 14. As shown in FIGS. 14 and 15, the difference between this embodiment and the first embodiment is that the membrane 110 of the sound generation cell 600 of this embodiment further includes a third membrane sub-part 116 and a fourth membrane sub-part 118. The third membrane sub-part 116 and the fourth membrane sub-part 118 are arranged between the first membrane sub-part 112 and the second membrane sub-part 114 when viewed from above, and the third membrane sub-part 116 and the fourth membrane sub-part 118 can be on opposite sides of each other when viewed from above. That is, the third membrane sub-part 116 is arranged on the first side (e.g., the left side) of the sound generation cell 600 between the first membrane sub-part 112 and the second membrane sub-part 114 when viewed from above, and the fourth membrane sub-part 118 is arranged on the second side (e.g., the right side) of the sound generation cell 600 between the first membrane sub-part 112 and the second membrane sub-part 114 when viewed from above, and the first side and the second side of the sound generation cell 600 can be opposite to each other when viewed from above.

[0080] In FIG. 14, only one end of the third membrane sub-part 116 is fixed by being connected to the anchor structure 120, and only one end of the fourth membrane sub-part 118 is fixed by being connected to the anchor structure 120. The other ends of the third membrane sub-part 116 and the fourth membrane sub-part 118 are not fixed and may not be connected to the anchor structure 120. That is, the third fixed end 116a of the third membrane sub-part 116 is the only fixed end of the third membrane sub-part 116, and the fourth fixed end 118a of the fourth membrane sub-part 118 is the only fixed end of the fourth membrane sub-part 118. The third membrane sub-part 116 is directly connected to the anchor structure 120 only through the third fixed end 116a, and the fourth membrane sub-part 118 can be directly connected to the anchor structure 120 only through the fourth fixed end 118a.

[0081] In FIG. 14, one second slit SL2 is disposed between the first membrane sub-part 112 and the third membrane sub-part 116 to define a second non-fixed end 112n2 of the first membrane sub-part 112 and a fifth non-fixed end 116n5 of the third membrane sub-part 116. Another second slit SL2 is disposed between the first membrane sub-part 112 and the fourth membrane sub-part 118 to define another second non-fixed end 112n2 of the first membrane sub-part 112 and a sixth non-fixed end 118n6 of the fourth membrane sub-part 118. One third slit SL3 is disposed between the second membrane sub-part 114 and the third membrane sub-part 116 to define a fourth non-fixed end 114n4 of the second membrane sub-part 114 and another fifth non-fixed end 116n5 of the third membrane sub-part 116. Another third slit SL3 is between the second membrane sub-part 114 and the fourth membrane sub-part 118 and may define another fourth non-fixed end 114n4 of the second membrane sub-part 114 and another sixth non-fixed end 118n6 of the fourth membrane sub-part 118. In some embodiments, the fifth non-fixed end 116n5 of the third membrane sub-part 116 may be adjacent to the third fixed end 116a of the third membrane sub-part 116, and the sixth non-fixed end 118n6 of the fourth membrane sub-part 118 may be adjacent to the fourth fixed end 118a of the fourth membrane sub-part 118, but is not limited to such a configuration.

[0082] As shown in FIG. 14, the shape of the first membrane sub-part 112 and the shape of the second membrane sub-part 114 are substantially trapezoidal, the shape of the third membrane sub-part 116 and the shape of the fourth membrane sub-part 118 are substantially triangular, the first membrane sub-part 112 and the second membrane sub-part 114 may substantially coincide, and the third membrane sub-part 116 and the fourth membrane sub-part 118 may substantially coincide, but is not limited to such a configuration.

[0083] During the operation of the sound generation cell 600, there are side openings respectively between the first membrane sub-part 112 and the third membrane sub-part 116, between the second membrane sub-part 114 and the third membrane sub-part 116, between the first membrane sub-part 112 and the fourth membrane sub-part 118, and between the second membrane sub-part 114 and the fourth membrane sub-part 118. The size of the side openings is relative to the low-frequency roll-off (LFRO) effect in the frequency response of the sound generation cell 600. At low frequencies, a strong LFRO effect can cause a distinct SPL drop of the sound wave.

[0084] Specifically, for the side openings of the sound generation cell 600, the low-frequency acoustic resistance may be

[0085]

Number

[0086] According to the above formula, when d (i.e., the maximum size of the side opening in the Z direction) is reduced, the acoustic resistance at low frequencies increases. In the first embodiment shown in FIG. 1, for the first membrane sub-part 112, the maximum size of the side opening in the Z direction is the maximum distance between the second non-fixed end 112n2 in the Z direction and the anchor structure 120. In the sixth embodiment shown in FIG. 14, for the first membrane sub-part 112, the maximum size of the side opening in the Z direction is the maximum distance between the second non-fixed end 112n2 of the first membrane sub-part 112 and the fifth non-fixed end 116n5 (or the sixth non-fixed end 118n6 of the fourth membrane sub-part 118) of the third membrane sub-part 116 in the Z direction. In the sixth embodiment shown in FIG. 14, since the third membrane sub-part and the fourth membrane sub-part exist, by controlling the third membrane sub-part 116 and the fourth membrane sub-part 118 to approach the first membrane sub-part 112 and the second membrane sub-part 114 in the Z direction during the operation of the sound generation cell 112, d shown in the above formula can be reduced. That is, in FIG. 14, the third membrane sub-part 116 is configured to reduce sound leakage on the first side (left side) of the sound generation cell 600, and the fourth membrane sub-part 118 is configured to reduce sound leakage on the second side (right side) of the sound generation cell.

[0087] The sound generation cell 600 may include at least one appropriate structure to increase the acoustic resistance at low frequencies by reducing d (i.e., the maximum size of the side opening in the Z direction). In this embodiment, due to this appropriate structure, during the operation of the sound generation cell 600, the fifth non-fixed end 116n5 of the third membrane sub-part 116 approaches the second non-fixed end 112n2 of the first membrane sub-part 112 and the fourth non-fixed end 114n4 of the second membrane sub-part 114 in the Z direction, respectively, and the sixth non-fixed end 118n6 of the fourth membrane sub-part 118 may approach the second non-fixed end 112n2 of the first membrane sub-part 112 and the fourth non-fixed end 114n4 of the second membrane sub-part 114 in the Z direction, respectively. Therefore, during the operation of the sound generation cell 600, the size of the side opening can be reduced, so the acoustic resistance at low frequencies is increased, and the LFRO effect in the frequency response of the sound generation cell 600 is reduced.

[0088] For example, to reduce d, the membrane 110 may include at least one spring connected between these sub-parts of the membrane 110 such that the free ends of the sub-parts move closer to each other in the Z direction during the operation of the sound generation cell 600. As shown in FIG. 14, the membrane 110 may include at least one second spring SPR2 and at least one third spring SPR3. The second spring SPR2 may be directly connected between the first membrane sub-part 112 and the third membrane sub-part 116 or directly connected between the first membrane sub-part 112 and the fourth membrane sub-part 118. The third spring SPR3 may be directly connected between the second membrane sub-part 114 and the third membrane sub-part 116 or directly connected between the second membrane sub-part 114 and the fourth membrane sub-part 118. In FIG. 14, the membrane 110 includes two second springs SPR2 and two third springs SPR3. The two second springs SPR2 are respectively connected between the first membrane sub-part 112 and the third membrane sub-part 116 and between the first membrane sub-part 112 and the fourth membrane sub-part 118. The two third springs SPR3 may be respectively connected between the second membrane sub-part 114 and the third membrane sub-part 116 and between the second membrane sub-part 114 and the fourth membrane sub-part 118, but is not limited to such a configuration. Note that the second spring SPR2 and the third spring SPR3 are formed by slits SL (for example, slits SL other than the first slit SL1, the second slit SL2, and the third slit SL3).

[0089] In addition, in one spring shown in FIG. 14, the connection direction of this spring to one sub-part may be the same as the connection direction of this spring to another sub-part, but is not limited to such a configuration. For example, in FIG. 14, the spring may be substantially U-shaped, but is not limited to such a shape. For example, the U-shape of the spring may have a large curvature, but is not limited to such a configuration. With this design, to reduce the size of the side opening between the two sub-parts (i.e., d decreases), the air leakage during the operation of the sound generation cell 600 is reduced, so the LFRO effect in the frequency response of the sound generation cell 600 is reduced.

[0090] For example, in order to reduce d, the actuating layer 130 can be disposed on the first membrane sub-part 112, the second membrane sub-part 114, the third membrane sub-part 116, and the fourth membrane sub-part 118. During the operation of the sound generation cell 600, the actuating layer 130 can actuate these sub-parts to move along the direction Z such that the free ends of these sub-parts approach each other in the direction Z.

[0091] Furthermore, in the region R3 shown in FIG. 15, the sound generation cell 600 may include a recess structure RS outside the membrane 110. The recess structure RS is directly connected to the slit sections SLs within the corner region CR of the membrane 110, and the recess structure RS may have a curved pattern (for example, the recess structure RS may have a semi-circular arc pattern). For example, in FIG. 15, the slit section SLs is connected between the end of the second slit SL2 located within the corner region CR and the recess structure RS. The slit section SLs may have a linear pattern, but is not limited to such a configuration. The presence of the curved recess structure RS connected to the slit section SLs located within the corner region CR can increase the success rate of the manufacturing process of the sound generation cell 600 and can increase the yield rate of the sound generation cell 600.

[0092] Referring to FIG. 16, FIG. 16 is a schematic top view showing a sound generation cell according to the seventh embodiment of the present invention. As shown in FIG. 16, the difference between this embodiment and the sixth embodiment lies in the design of the spring. In the sound generation cell 700 shown in FIG. 16, a fifth slit SL5 including a hook-shaped curved pattern and a linear pattern is individually connected to the first slit SL1, the second slit SL2, or the third slit SL3. The second spring SPR2 and the third spring SPR3 can be formed by the first slit SL1, the second slit SL2, the third slit SL3, and the fifth slit SL5, but is not limited to such a configuration. Furthermore, in FIG. 16, the spring can be substantially V-shaped, but is not limited to such a configuration.

[0093] Referring to FIG. 17, FIG. 17 is a schematic top view showing a sound generation cell according to an eighth embodiment of the present invention. As shown in FIG. 17, the difference between this embodiment and the sixth embodiment is that the slit SL of the membrane 110 of the sound generation cell 800 further includes at least one side slit SLi formed in the third membrane sub-part 116 and / or the fourth membrane sub-part 118.

[0094] Due to the presence of the side slit SLi, the structural strength of the third membrane sub-part 116 and the fourth membrane sub-part 118 may be weakened. Therefore, the second spring SPR2 and the third spring SPR3 can pull the third membrane sub-part 116 and the fourth membrane sub-part 118 during the operation of the sound generation cell 800, so that their non-fixed ends are close to the non-fixed ends of the first membrane sub-part 112 and the second membrane sub-part 114 in the direction Z.

[0095] On the other hand, compared with the structure without the side slit SLi, the membrane 110 of this embodiment forms a plurality of small openings during the operation of the sound generation cell 800 instead of one original large opening that can be formed between the two non-fixed ends of the sub-parts. At least one small opening is formed between the two non-fixed ends, and at least one small opening can be formed by the side slit SLi. That is, the d of the original large opening changes to a plurality of d' of the small openings, and d' is smaller than d. For example, according to the above formula, assuming that one original large opening is replaced by three small openings and the d of the original large opening is three times larger than the d' of the small opening, the acoustic resistance of the three small openings will be nine times larger than the acoustic resistance of the original large opening. Therefore, this design can increase the low-frequency acoustic resistance.

[0096] As shown in FIG. 17, the second spring SPR2 can be formed by the first slit SL1, the second slit SL2, the fifth slit SL5, and the side slit SLi, and the third spring SPR3 can be formed by the first slit SL1, the third slit SL3, the fifth slit SL5, and the side slit SLi, but it is not limited to such a configuration.

[0097] In some embodiments, as shown in FIG. 17, the active layer 130 is disposed on the first membrane sub-part 112 and the second membrane sub-part 114, and the active layer 130 is not disposed on the third membrane sub-part 116 and the fourth membrane sub-part 118 (i.e., the active layer is not disposed on the third membrane sub-part 116 and the fourth membrane sub-part 118), but is not limited to such a configuration.

[0098] Furthermore, in FIG. 17, the membrane 110 may optionally include a first spring SPR1 directly connected between the first membrane sub-part 112 and the second membrane sub-part 114. For example, the first spring SPR1 shown in FIG. 17 may be formed by two first slits SL1 and two fifth slits SL5, but is not limited to such a configuration.

[0099] Referring to FIGS. 18 and 19, FIG. 18 is a schematic top view showing a sound generation cell according to a ninth embodiment of the present invention, FIG. 19 is a schematic side view showing a sound generation cell according to a ninth embodiment of the present invention, FIGS. 18 and 19 show only the first membrane sub-part 112, and the design of the second membrane sub-part 114 may be the same as the design of the first membrane sub-part 112. As shown in FIG. 18, the difference between this embodiment and the first embodiment lies in the design of the fixed end of the sub-part of the membrane 110. In the sound generation cell 900 of this embodiment, the fixed end of the sub-part of the membrane 110 is partially fixed, and the fixed end includes at least one fixed part and at least one non-fixed part. The fixed part of the fixed end is fixed, and the non-fixed part of the fixed end is not fixed. For example, in FIG. 18, the first fixed end 112a of the first membrane sub-part 112 that is partially fixed may include two fixed parts AP and one non-fixed part NP between the two fixed parts AP, but is not limited to such a configuration. The non-fixed part NP of the first fixed end 112a moves in the direction of Z when the sound generation cell 900 is operated (i.e., when the first membrane sub-part 112 is actuated), and by increasing the deformation of the membrane 110, the SPL of the sound wave generated by the sound generation cell 900 is increased.

[0100] To make the fixed end have a fixed part AP and a non-fixed part NP, the slit SL of the membrane 110 may include at least one inner slit. In this embodiment, the first membrane sub-part 112 has at least one first inner slit SLn1 and at least one second inner slit SLn2. The non-fixed part NP of the first fixed end 112a is defined by the first inner slit SLn1. Since the second inner slit SLn2 is connected to the first inner slit SLn1, the first fixed end 112a has a fixed part AP and a non-fixed part NP. That is, the first inner slit SLn1 is parallel to the first fixed end 112a and is between the first membrane sub-part 112 and the anchor structure 120. The second inner slit SLn2 is not parallel to the first fixed end 112a. For example, in FIG. 18, the first membrane sub-part 112 has one first slit SL1 and two second slits SL2, and the second inner slit SLn2 may be a linear slit perpendicular to the first fixed end 112a, but is not limited to such a configuration. For example, the second inner slit SLn2 extends from the first fixed end 112a toward the first slit SL1, and the second inner slit SLn2 is not connected to the first slit SL1.

[0101] Optionally, the first inner slit SLn1 that defines the non-fixed part NP of the first fixed end 112a may be connected between two slits SL. For example, in FIG. 18, the first inner slit SLn1 may be connected between two second inner slits SLn2 such that the fixed part AP and the non-fixed part NP of the first fixed end 112a are divided by the second inner slit SLn2, but is not limited to such a configuration.

[0102] Optionally, in FIG. 18, the first inner slit SLn1 and the second inner slit SLn2 may be separated from the first slit SL1, the second slit SL2, and the third slit SL3, but are not limited to such a configuration.

[0103] As shown in FIG. 18, the first membrane sub-part 112 can be divided into a plurality of parts by the inner slit SL. For example, in FIG. 18, the first membrane sub-part 112 is divided into three parts 912p1, 912p2, 912p3. 912p1 and 912p are between the second slit SL2 and the second inner slit SLn2, and the part 912p2 can be between the two second inner slits SLn2. For example, in FIG. 18, the parts 912p1 and 912p3 may have a fixed portion AP of the first fixed end 112a so as to be fixed by the anchor structure 120. For example, in FIG. 18, the part 912p2 may have a non-fixed portion NP of the first fixed end 112a so that during the operation of the sound generation cell 900, the part 912p2 moves along the direction Z with a large displacement (compared to the parts 912p1 and 912p3). Therefore, the SPL of the sound wave generated by the sound generation cell 900 can be increased.

[0104] As shown in FIG. 18, the actuating layer 130 may include three parts respectively arranged in the three parts 912p1, 912p2 and 912p3 of the first membrane sub-part 112 to actuate the first membrane sub-part 112.

[0105] In FIG. 19 showing a side view of the sound generation cell 900 during operation, during the operation of the sound generation cell 900, the part 912p2 moves along the direction Z with a large displacement (compared to the parts 912p1, 912p3), and the non-fixed portion NP of the first fixed end 112a can be higher than the fixed portion AP in the direction Z.

[0106] Referring to FIG. 20, FIG. 20 is a schematic top view showing a sound generation cell according to the tenth embodiment of the present invention. As shown in FIG. 20, the difference between this embodiment and the ninth embodiment lies in the design of the fixed end of the sub-part of the membrane 110. In the sound generation cell 900' shown in FIG. 20, the first fixed end 112a of the first membrane sub-part 112 may include two non-fixed parts NP and one fixed part AP between the two non-fixed parts NP, but is not limited to such a configuration. In FIG. 20, the first membrane sub-part 112 has two first inner slits SLn1 and two second inner slits SLn2, and the first inner slit SLn1 may be connected between the second inner slit SLn2 and the second inner slit SL2, but is not limited to such a configuration.

[0107] In FIG. 20, the portion 912p2 may have a fixed part AP of the first fixed end 112a so as to be fixed by the anchor structure 120. In FIG. 20, the portions 912p1 and 912p3 have non-fixed parts NP of the first fixed end 112a so that the portions 912p1 and 912p3 can move along the direction Z with a large displacement (compared to the part 912p2) during the operation of the sound generation cell 900', and thus the SPL of the sound wave generated by the sound generation cell 900' can be increased.

[0108] Hereinafter, the details of the package structure PKG of the sound generation cell SPC will be further exemplarily described. Note that the package structure PKG is not limited to the following exemplary embodiments, and the package structure PKG may have a sound generation cell SPC that is an embodiment not departing from the spirit of the present invention (for example, one of the above embodiments or a combination of the above embodiments).

[0109] Referring to FIGS. 21 to 23, FIG. 21 is a schematic diagram showing a package structure according to an embodiment of the present invention, FIG. 22 is a bottom view showing the package structure shown in FIG. 21, and FIG. 23 is a schematic cross-sectional view showing the package structure shown in FIG. 21. As shown in FIGS. 21 to 23, the package structure PKG of the sound generation cell SPC of the present invention includes a base BS, a cover HS disposed on the base BS, and the aforementioned sound generation cell SPC disposed within the cover HS, and the sound generation cell SPC is between the base BS and the cover HS.

[0110] The base BS may be rigid or flexible and may include any suitable material. For example, the base BS may include silicon, germanium, glass, plastic, quartz, sapphire, metal, polymer (e.g., PI, PET), any other suitable material, or a combination thereof. As an example, in FIGS. 21 to 23, the base BS may be a circuit board including a laminate (e.g., a copper-clad laminate, CCL), a land grid array (LGA) board, or any other suitable board including a conductive material, and the base BS may include one or more conductive components such as, but not limited to, connection traces, active components, passive components, and / or connection pads. For example, in FIG. 22, the base BS has at least one conductive layer CDB, the sound generation cell SPC and the conductive layer CDB are disposed on both sides of the base BS, the conductive layer CDB includes a plurality of conductive pads CPC and a conductive ring CRC, and the conductive pads CPC are configured to be electrically connected between the sound generation cell SPC and an external device of the package structure PKG.

[0111] The base BS may be substantially parallel to, but not limited to, the directions X and Y (i.e., the normal direction of the base BS may be substantially parallel to the direction Z). For example, in FIGS. 21 to 23, the base BS may be substantially parallel to, but not limited to, the membrane 110 of the sound generation cell SPC.

[0112] Cover HS includes an upper structure TS and at least one side wall SW, and the side wall SW is between the base BS and the upper structure TS. In some embodiments, the base BS and the upper structure TS may be substantially parallel to each other. For example, in FIGS. 21-23, without limitation, the upper structure TS may be substantially parallel to the directions X and Y (i.e., the normal direction of the upper structure TS may be substantially parallel to the direction Z), and the side wall SW may be substantially parallel to the direction Z. For example, in FIGS. 21-23, without limitation, the upper structure TS is substantially parallel to the membrane 110 of the sound generation cell SPC, and the side wall SW may surround the sound generation cell SPC.

[0113] The upper structure TS and the side wall SW may be rigid or flexible, and they may include any suitable material. For example, the upper structure TS and the side wall SW may individually include silicon, germanium, glass, plastic, quartz, sapphire, metal, polymer (e.g., PI, PET), any other suitable material, or a combination thereof. As an example, in FIGS. 21-23, without limitation, the upper structure TS and the side wall SW include metal and may form a one-piece structure (e.g., a cap).

[0114] As shown in FIGS. 21-23, the sound generation cell SPC is disposed on the base BS, and the cavity CV in the cover HS is divided by the membrane 110 of the sound generation cell SPC into two sub-cavities (i.e., the first sub-cavity CV1 and the second sub-cavity CV2), and the membrane 110 is between the two sub-cavities. The first sub-cavity CV1 is between the membrane 110 and the upper structure TS, and the second sub-cavity CV2 may be between the membrane 110 and the base BS.

[0115] Furthermore, in FIGS. 21 to 23, at least a first cover opening OP1 and at least a second cover opening OP2 are individually formed on a cover HS or a base BS, the first cover opening OP1 may be connected to a first sub-cavity CV1, and the second cover opening OP2 may be connected to a second sub-cavity CV2. For example, the first cover opening OP1 may be, but is not limited to, a sound outlet. For example, as shown in FIGS. 21 to 23, but not limited to, the first cover opening OP1 may be formed in an upper structure TS, and the second cover opening OP2 may be formed in the base BS.

[0116] The number of the first cover openings OP1, the arrangement of the first cover openings OP1, the number of the second cover openings OP2, and the arrangement of the second cover openings OP2 can be designed based on requirements.

[0117] In some embodiments, one first cover opening OP1 and / or one second cover opening OP2 may correspond to a region of a package structure PKG that generates the highest sound pressure level SPL from a sound generation cell SPC. For example (FIGS. 21 to 23), but not limited to, one first cover opening OP1 may be located at the center of an upper surface structure TS in a top view (or the center of a side wall SW in a side view) and / or one second cover opening OP2 may be located at the center of a base BS in a top view. For example, but not limited to, the first cover opening OP1 and / or the second cover opening OP2 may correspond to the center of a diaphragm 110 in a normal direction (i.e., direction Z) of the base BS. For example, each diaphragm 110 may correspond to at least the first cover opening OP1 and / or at least one second cover opening OP2.

[0118] For example (e.g., FIG. 27), when the cover HS includes a plurality of first cover openings OP1 (or a plurality of second cover openings OP2), the first cover openings OP1 (or the second cover openings OP2) can be arranged in a plurality of rows extending along a certain direction (e.g., direction X) and / or in a plurality of rows extending along another direction (e.g., direction Y), although not limited thereto. For example, when the cover HS includes a plurality of first cover openings OP1 (or a plurality of second cover openings OP2), the first cover openings OP1 (or the second cover openings OP2) can be arranged in an array, although not limited thereto.

[0119] The pattern of the first cover opening OP1 as viewed from above and the pattern of the second cover opening OP2 as viewed from above can be designed based on requirements. For example, the pattern of the cover opening as viewed from above can be a polygon (e.g., rectangle, hexagon, etc.), a circle, or other suitable shapes.

[0120] The size of the first cover opening OP1 and the size of the second cover opening OP2 are designed based on requirements. The smaller the size of the sound outlet (e.g., the first cover opening OP1), the greater the protection effect of the cover HS, and the larger the total area of the sound outlet (e.g., the first cover opening OP1), the smaller the acoustic resistance of the cover HS. Therefore, in some embodiments, in order to increase the protection effect of the cover HS and reduce the acoustic resistance, the size of the sound outlet (e.g., the first cover opening OP1) is made smaller as the number of sound outlets increases.

[0121] The sound generation cell SPC can use any suitable method to be electrically connected to an external device. For example, in FIGS. 21 to 23, the sound generation cell SPC can be electrically connected to an external device through a conductive component (e.g., connection pad CPC) of the base BS, although not limited thereto.

[0122] In the present invention, the sound generation cell SPC is electrically connected to the controller, the controller is configured to generate a drive signal, and the drive signal can be applied to the actuating layer 130 to operate the membrane 110. The controller can be arranged within the package structure PKG or outside the package structure PKG.

[0123] The method for forming the package structure PKG can be any suitable forming method. In the forming method of some embodiments, a cover HS and a base BS are provided, and the sound generation cell SPC can be manufactured by the above method. Then, the sound generation cell SPC can be arranged on the base BS and can be arranged within the cover HS. For example, but not limited to, the sound generation cell SPC can be arranged on the base BS before arranging the cover HS on the base BS. For example, but not limited to, before arranging the sound generation cell SPC on the base BS, a second cover opening OP2 can be formed in the base BS, and before arranging the sound generation cell SPC within the cover HS, a first cover opening OP1 can be formed in the cover HS.

[0124] Referring to FIG. 24, FIG. 24 is a schematic diagram showing a package structure according to an embodiment of the present invention. As shown in FIG. 24, the first cover opening OP1 may not be located at the center of the upper surface structure TS when viewed from the upper surface, for example, but not limited to. As shown in FIG. 24, the first cover opening OP1 may correspond to the center of the membrane 110 in the normal direction of the base BS (i.e., the direction Z), for example, but not limited to.

[0125] Referring to FIGS. 25 and 26, FIG. 25 is a schematic diagram showing a package structure according to an embodiment of the present invention, and FIG. 26 is a schematic cross-sectional view showing the package structure shown in FIG. 25. As shown in FIGS. 25 and 26, the first cover opening OP1 can be formed in the side wall SW of the cover HS, for example, but not limited to.

[0126] Referring to FIGS. 27 and 28, FIG. 27 is a schematic diagram showing a package structure according to an embodiment of the present invention, and FIG. 28 is a schematic cross-sectional view showing the package structure shown in FIG. 27. As shown in FIGS. 27 and 28, the upper structure TS (or side wall SW) of the cover HS of the package structure PKG has a plurality of first cover openings OP1, and the first cover openings OP1 may be small or extremely small. For example, the size of the first cover opening OP1, although not limited, may be 10%, 5%, 3% or 1% or less of the upper structure TS of the cover HS.

[0127] Since the upper structure TS has a plurality of first cover openings OP1 with small sizes, the upper structure TS of the present invention can provide a high physical protection effect for the sound generation cell SPC when the upper structure TS has low acoustic resistance. For example, although not limited, the upper structure TS of the present invention can protect the sound generation cell SPC during subsequent use of the package structure PKG (for example, the operation of the sound generation cell SPC, the process of arranging the package structure PKG in a device), so the yield rate of the package structure PKG and the yield rate of the device can be increased. Further, due to the presence of the upper structure TS having a plurality of first cover openings OP1, foreign objects (for example, dust, particles, sharp objects, etc.) are less likely to enter the package structure PKG.

[0128] In the first frequency response of the membrane 110 of the sound generation cell SPC before being arranged in the package structure PKG, the minimum resonance peak of the membrane 110 is generated at the first frequency (that is, the first frequency is the minimum resonance frequency of the membrane 110) and has the first peak value (that is, SPL). In the second frequency response of the membrane 110 of the sound generation cell SPC after being arranged in the package structure PKG, the minimum resonance peak of the membrane 110 is generated at the second frequency (that is, the second frequency is the minimum resonance frequency of the membrane 110) and has the second peak value (that is, SPL). In some embodiments, the first frequency is greater than the second frequency and / or the first peak value is greater than the second peak value.

[0129] In the second frequency response of the membrane 110 of the sound generation cell SPC after being disposed in the package structure PKG, the second frequency (i.e., the minimum resonance frequency) and the second peak value (i.e., the peak value of the minimum resonance peak) decrease as the total area of the first cover opening OP1 decreases. In some embodiments, the difference between the first frequency and the second frequency can be 1000 Hz, 2000 Hz, 5000 Hz or other suitable values or more. Therefore, in the package structure PKG, the minimum resonance frequency of the membrane 110 and the peak value of the minimum resonance peak of the membrane 110 can be changed by adjusting the total area of the first cover opening OP1.

[0130] Hereinafter, the details of the apparatus APT including the above-described sound generation cell SPC will be further exemplarily described. The apparatus APT can be a headphone, an earphone, an earbud or other suitable sound generation device. Note that the apparatus APT is not limited to the following exemplary embodiments, and the sound generation cell SPC included in the apparatus APT can be an embodiment (for example, one of the above embodiments or a combination of the above embodiments) that does not deviate from the spirit of the present invention.

[0131] Referring to FIG. 29, FIG. 29 is a schematic cross-sectional view showing an apparatus according to an embodiment of the present invention. As shown in FIG. 29, the apparatus APT includes a housing OC, a package structure PKG of the sound generation cell SPC, and an apparatus base BS_AS, and the package structure PKG can be disposed on the apparatus base BS_AS and within the housing OC. Note that the package structure PKG of the sound generation cell SPC can be one of the above embodiments or a combination of the above embodiments.

[0132] The device base BS_AS can include silicon, germanium, glass, plastic, quartz, sapphire, metal, polymers (e.g., PI, PET), any other suitable material, or combinations thereof. As an example, in FIG. 29, the device base BS_AS is a circuit board including a laminate (e.g., a copper-clad laminate, CCL), a land grid array (LGA) substrate, or any other suitable substrate including a conductive material, and the device base BS_AS can include one or more conductive components such as, but not limited to, connection traces, active components, passive components, and / or connection pads.

[0133] As shown in FIG. 29, the device base BS_AS has at least one device base opening BS_ASp, and the second sub-cavity CV2 of the package structure PKG can be connected to the device base opening BS_ASp of the device base BS_AS through the second cover opening OP2 of the package structure PKG.

[0134] As shown in FIG. 29, the housing OC has at least one outlet opening OCp, and the first sub-cavity CV1 of the package structure PKG can be connected to the outside in front of the device APT through the first cover opening OP1 of the package structure PKG and the outlet opening OCp of the housing OC.

[0135] Optionally, the housing OC of the present embodiment can clamp the device base BS_AS and the package structure PKG (e.g., the housing OC can contact the side walls of the device base BS_AS and the side walls SW of the package structure PKG) to fix the device base BS_AS and the package structure PKG within the device APT and separate the first sub-cavity CV1 and the second sub-cavity CV2. Optionally, a gasket is further provided within the device APT, and the gasket is disposed between the package structure PKG and the housing OC and can surround the outlet opening OCp.

[0136] In FIG. 29, the package structure PKG may be assembled into the device APT via surface mounting technology. Through the surface mounting technology, a conductive adhesive layer CAL (including, for example, solder) is disposed between the device base BS_AS and the base BS of the package structure PKG, so that the package structure PKG can be disposed on the device base BS_AS.

[0137] In the present invention, since the surface mounting technology is performed, the package structure PKG including the sound generation cell SPC needs to be designed to withstand the maximum process temperature of the surface mounting technology. As a result, the package structure PKG has a heat-resistant temperature with an upper limit higher than the maximum process temperature of the surface mounting technology, so that damage to the package structure PKG does not occur, and the package structure PKG can maintain normal operation (that is, can normally generate sound waves) after the surface mounting technology is performed. In some embodiments, since the maximum process temperature of the surface mounting technology may be in the range of 240° C. to 250° C., the upper limit of the heat-resistant temperature of the package structure PKG is not limited, but may be higher than 240° C. or higher than 250° C. Further, in some embodiments, each material included in the package structure PKG has a heat-resistant temperature with an upper limit higher than the maximum process temperature of the surface mounting technology to ensure that the package structure PKG is not damaged during the surface mounting technology. For example, each material included in the package structure PKG has a heat-resistant temperature with an upper limit not limited to being higher than 240° C. or higher than 250° C.

[0138] The surface mounting technology will be described below. The following surface mounting technology is an example, and some steps are omitted for clarity of the description of the surface mounting technology.

[0139] In the process of surface mount technology, a device base BS_AS having at least one conductive pad BS_ASc, at least one conductive trace, and a device base opening BS_ASp is first provided, and the conductive pad BS_ASc and the device base opening BS_ASp can be formed before performing the surface mount technology. Next, a conductive adhesive layer CAL is disposed on the conductive pad BS_ASc of the device base BS_AS. For example, the conductive adhesive layer CAL can be printed on the device base BS_AS, although not limited thereto. Next, an electronic component such as a package structure PKG of a sound generation cell SPC is placed on the conductive adhesive layer CAL to contact the conductive adhesive layer CAL, and the conductive pad CPC of the package structure PKG contacts the conductive adhesive layer CAL. Next, a temperature rising step (for example, a reflow step) is performed to raise the process temperature so that the conductive adhesive layer CAL melts and adheres to the conductive pad BS_ASc of the device base BS_AS and the conductive pad CPC of the package structure PKG. As a result, by using the surface mount technology, the package structure PKG is disposed on the device base BS_AS and is electrically connected to the conductive pad BS_ASc via the conductive adhesive layer CAL.

[0140] In a conventional speaker or a conventional sound generation device, since some components (such as a rubber suspension and / or an adhesive adhered to a coil) cannot withstand the maximum process temperature of the surface mount technology, the surface mount technology cannot be used in the conventional speaker (or the conventional sound generation device). In contrast, in the present invention, since the package structure PKG is designed to withstand the maximum process temperature of the surface mount technology, damage to the package structure PKG does not occur, and the package structure PKG can operate normally after performing the surface mount technology. Further, since the surface mount technology is applied in the present invention, there is no need to perform a wire bonding method / process (a method / process using a conductive wire to electrically connect between an electronic component and the device base BS_AS), so that the lateral dimension of the device APT can be significantly reduced.

[0141] The method of forming the device APT can be any suitable forming method. In the method of forming the device APT according to some embodiments, the package structure PKG can be formed by the aforementioned method. Then, the package structure PKG can be assembled to the device APT including the housing OC via surface mounting technology. For example, the package structure PKG is arranged on the device base BS_AS of the device APT via surface mounting technology.

[0142] Referring to FIG. 30, FIG. 30 is a schematic diagram showing a device according to an embodiment of the present invention. As shown in FIG. 30, the device APT of this embodiment includes a package structure PKG of the sound generation cell SPC and two vent devices VD, all of which can be arranged within the housing OC.

[0143] The vent device VD is configured to form or close a vent. When the vent is formed, the internal cavity CVi of the device APT is connected to the surroundings of the device APT via the vent. As shown in FIG. 30, the vent device VD includes a vent substrate ST_V having at least one substrate opening OPV, a cover structure CS_V arranged on the vent substrate ST_V, and a film structure TF_V arranged between the vent substrate ST_V and the cover structure CS_V. The film structure TF_V is configured to operate so as to form or close the vent. The cover structure CS_V is configured to cover and protect the film structure TF_V and has at least one lid opening (not shown). When the vent is formed by the film structure TF_V, the airflow passes through the lid opening of the cover structure CS_V, the vent, and the substrate opening OPV of the vent substrate ST_V, and the internal cavity CVi of the device APT is connected to the surroundings of the device APT.

[0144] The vent device VD can be configured to suppress the occlusion effect during the operation of the sound generation cell SPC. The occlusion effect is caused by the sealed volume of the eustachian tube causing a large perceived sound pressure by the user (i.e., the listener). In some cases, the user performs certain actions (such as walking, jogging, conversation, eating, contact with the acoustic transducer, etc.) that generate bone conduction sounds, and the occlusion effect occurs while using the device APT filled in the user's eustachian tube. Due to the occlusion effect, the user will hear occlusion sounds, resulting in a decrease in the user's listening quality. In this embodiment, based on the occurrence or non-occurrence of the occlusion effect, the vent of the vent device VD can be formed or closed. When the occlusion effect occurs, the vent of the vent device VD is formed so that the volume of the ear canal is not sealed, thereby suppressing the occlusion effect. When the occlusion effect does not occur, the vent of the vent device VD is closed, enhancing the quality of the sound waves generated by the device APT. Therefore, due to the presence of the vent device VD, the performance and experience of the user using the device APT can be enhanced.

[0145] In the embodiment shown in FIG. 30, without limitation, the two vent devices VD can be arranged symmetrically. In one embodiment, the vent device VD can be a MEMS device or a package including a MEMS structure.

[0146] In one embodiment, the device APT further includes a sensing device, and the vent of the vent device VD is formed or closed based on the sensing result generated by the sensing device. For example, the sensing device can include a motion sensor, a force sensor, an optical sensor, an acceleration sensor, a pressure sensor, an altitude sensor, a proximity sensor, or a combination thereof.

[0147] The vent device VD, the package structure PKG, and the sensing device are coupled to a controller, and the controller can generate signals to control the vent device VD, the package structure PKG, and the sensing device.

[0148] Details or modifications of the venting device, the controller, and the sensing device are disclosed in U.S. Patent Application Nos. 17 / 344980, 17 / 344983, 17 / 842810, and 18 / 172346, the disclosures of which are hereby incorporated by reference in their entirety and form a part of this specification.

[0149] In the present invention, cells having functions different from those of the sound generation cell may also have the structure of any of the sound generation cells of the above embodiments or a structure combining the above embodiments. Therefore, the manufacturing method of this cell is called the manufacturing method of the above sound generation cell, the structure and formation method of the package structure including this cell are called the structure and formation method of the package structure of the above sound generation cell, and the structure and formation method of the device including this cell (or including the package structure including this cell) may be called the structure and formation method of the device including the above sound generation cell (or including the package structure including the sound generation cell).

[0150] In some embodiments, the cells disposed within the package structure of the present invention may have an acoustic function different from that of the sound generation cell. In some embodiments, the cells disposed within the package structure of the present invention may be vent cells within a venting device configured to suppress a blocking effect during the operation of the sound generation cell by forming or closing its vents. For example, in a modified embodiment of the device APT shown in FIG. 30, the venting device VD, which is a package structure, includes a vent cell including the above-described structure (i.e., one or a combination of the above embodiments shown in FIGS. 1 to 20). Therefore, the membrane design or the design of the membrane structure TF_V for the vent cell refers to one or a combination of the above embodiments shown in FIGS. 1 to 20 (e.g., FIG. 11), and the design of the cover structure CS_V may refer to one or a combination of the above embodiments shown in FIGS. 21 to 28 (e.g., FIGS. 21 to 23). Note that in this modified embodiment, the sound generation cell SPC may include the structure described in the present invention or other suitable structures.

[0151] In summary, according to the design of the sound generation cell or vent cell of the present invention, the sound generation cell or vent cell can achieve a higher resonance frequency, a larger SPL, a high through - yield rate and / or a low air leakage. Also, some cells having functions different from those of the sound generation cell can be called sound generation cells.

[0152] Those skilled in the art will readily notice that numerous modifications and changes can be made to the apparatus and methods while retaining the teachings of the present invention. Therefore, the above disclosure should be construed as being limited only by the content and scope of the appended claims.

Claims

1. A method for forming a package structure, comprising: performing a manufacturing method to manufacture cells, the manufacturing method comprising: providing a wafer including a first layer and a second layer; patterning the first layer of the wafer to form at least one trench line; placing the cells within a cover; wherein: the first layer includes a film fixed by an anchor structure of the cell, and at least one slit is formed in the film and penetrates the film by the at least one trench line; the film includes a first film sub-part and a second film sub-part, the first film sub-part and the second film sub-part are opposite to each other when viewed from a top view direction, and the first film sub-part and the second film sub-part are opposite to each other in a first direction perpendicular to the top view direction; the first film sub-part includes a first fixed end that is completely or partially connected to the anchor structure so as to be completely or partially fixed by the anchor structure, and ends of the first film sub-part other than the first fixed end are not fixed; the second film sub-part includes a second fixed end that is completely or partially connected to the anchor structure so as to be completely or partially fixed by the anchor structure, and ends of the second film sub-part other than the second fixed end are not fixed; a first ratio of the film is greater than 2, and the first ratio of the film is a ratio of a first length of a first side of the film to a second length of a second side of the film when viewed from a top view; The forming method.

2. further comprising forming a first cover opening in the cover before placing the cells within the cover, wherein the cover includes an upper structure and side walls, the upper structure is substantially parallel to the film, and the first cover opening is formed in the upper structure. The forming method according to claim 1.

3. further comprising forming a first cover opening in the cover before placing the cells within the cover, wherein the cover includes an upper structure and side walls, and the first cover opening is formed in the side walls. The forming method according to claim 1.

4. further comprising forming a plurality of first cover openings in the cover before placing the cells within the cover, The method of formation according to claim 1, wherein the cover includes an upper structure and side walls, the upper structure is substantially parallel to the film, and the first cover opening is formed in the upper structure.

5. The method of manufacturing the cell includes forming a recessed structure at the corner of the cell, and further includes the method of formation according to claim 1.

6. The method of manufacturing the cell includes forming a latch structure configured to limit the moving distances of the first film sub-part and the second film sub-part, and further includes wherein the moving distance is a distance along the normal direction of the base on which the cell is disposed, and the method of formation according to claim 1.

7. The method of manufacturing the cell includes forming a spring between the first film sub-part and the second film sub-part, and further includes the method of formation according to claim 1.

8. The method of manufacturing the cell includes patterning a first layer of the wafer such that the film further includes a third film sub-part and a fourth film sub-part, and further includes wherein the third film sub-part is configured to reduce acoustic leakage on a first side of the cell, and the fourth film sub-part is configured to reduce acoustic leakage on a second side of the cell, and the method of formation according to claim 1.

9. The method of manufacturing the cell includes forming at least one first inner slit and at least one second inner slit in the first film sub-part, and further includes wherein the first fixed end is partially fixed, the first fixed end includes at least one fixed part and at least one non-fixed part, at least one non-fixed part of the first fixed end is defined by the at least one first inner slit, and the at least one fixed part and the at least one non-fixed part are divided according to the at least one second inner slit, and the method of formation according to claim 1.

10. A method of forming a device, comprising forming a package structure by the method of formation according to claim 1, and assembling the package structure to the device including a housing via surface mount technology. The forming method includes.

11. A film including a first film sub-part and a second film sub-part, wherein the first film sub-part and the second film sub-part are opposite to each other, and an actuating layer disposed on the first film sub-part and the second film sub-part, and an acoustic generation cell including The first membrane sub-part includes a first fixed end that is completely or partially fixed, and the ends of the first membrane sub-part other than the first fixed end are not fixed. The second membrane sub-part includes a second fixed end that is completely or partially fixed, and the ends of the second membrane sub-part other than the second fixed end are not fixed. The first ratio of the membrane is greater than 2, and the first ratio of the membrane is the ratio of the first length of the first side of the membrane to the second length of the second side of the membrane, a sound generating cell.

12. The membrane is a first slit formed between the first membrane sub-part and the second membrane sub-part, the first non-fixed end of the first membrane sub-part being defined by the first slit, and when viewed from above, the first non-fixed end is on the opposite side of the first fixed end, the first slit; a second slit, the second non-fixed end of the first membrane sub-part being defined by the second slit, the second non-fixed end being adjacent to the first fixed end, the second slit; The sound generating cell according to claim 11, comprising.

13. The first non-fixed end of the first membrane sub-part and the third non-fixed end of the second membrane sub-part are defined by the first slit, and when viewed from above, the third non-fixed end of the second membrane sub-part is on the opposite side of the second fixed end of the second membrane sub-part. The sound generating cell according to claim 12.

14. A recessed structure disposed at the corner of the sound generating cell, the recessed structure being configured to disperse stress applied to the recessed structure during the peeling process. The sound generating cell according to claim 11.

15. The membrane includes a slit partition in a corner region, and the recessed structure is directly connected to the slit partition. The sound generating cell according to claim 14.

16. The recessed structure has a curved pattern. The sound generating cell according to claim 14.

17. Including four recessed structures disposed at the four corners of the sound generating cell, the four recessed structures being configured to disperse stress applied to the recessed structures during the peeling process. The sound generating cell according to claim 11.

18. The membrane includes a latch structure configured to limit the movement distance of the first membrane sub-part and the second membrane sub-part. The movement distance is the distance along the normal direction of the base on which the sound generating cell is disposed. The sound generating cell according to claim 11.

19. The latch structure includes a first latch component and a second latch component, the first latch component being part of the first membrane sub-part and the second latch component being part of the second membrane sub-part, the sound generating cell according to claim 18.

20. The membrane includes a first slit formed between the first membrane sub-part and the second membrane sub-part, and further includes, at least a part of the latch structure being formed by the first slit, the sound generating cell according to claim 18.

21. The membrane further includes a first spring directly connected between the first membrane sub-part and the second membrane sub-part, the sound generating cell according to claim 11.

22. The membrane includes at least one slit formed between the first membrane sub-part and the second membrane sub-part, and further includes, at least a part of the first spring being formed by the at least one slit, the sound generating cell according to claim 21.

23. One of the at least one slit includes a hook-shaped curved pattern, the sound generating cell according to claim 22.

24. The membrane includes a third membrane sub-part disposed between the first membrane sub-part and the second membrane sub-part on a first side of the sound generating cell when viewed from above, and includes, the third membrane sub-part being configured to reduce acoustic leakage on the first side of the sound generating cell, the third membrane sub-part including a fixed third fixed end, and an end of the third membrane sub-part other than the third fixed end not being fixed, the sound generating cell according to claim 11.

25. The membrane includes a fourth membrane sub-part disposed between the first membrane sub-part and the second membrane sub-part on a second side of the sound generating cell when viewed from above, and includes, the fourth membrane sub-part being configured to reduce acoustic leakage on the second side of the sound generating cell, the fourth membrane sub-part including a fixed fourth fixed end, and an end of the fourth membrane sub-part other than the fourth fixed end not being fixed, the sound generating cell according to claim 24.

26. The membrane A first slit formed between the first membrane sub-part and the second membrane sub-part, wherein a first non-fixed end of the first membrane sub-part is defined by the first slit, and the first non-fixed end is on the opposite side of the first fixed end, the first slit; A second slit formed between the first membrane sub-part and the third membrane sub-part, wherein a second non-fixed end of the first membrane sub-part and a fourth non-fixed end of the third membrane sub-part are defined by the second slit, the second non-fixed end of the first membrane sub-part is adjacent to the first fixed end of the first membrane sub-part, and the fourth non-fixed end of the third membrane sub-part is adjacent to the third fixed end of the third membrane sub-part, the sound generation cell according to claim 24. **Claim 27** The membrane is A second spring directly connected between the first membrane sub-part and the third membrane sub-part The sound generation cell according to claim 24, further comprising **Claim 28** The sound generation cell according to claim 24, wherein at least one side slit is formed in the third membrane sub-part and the working layer is not disposed in the third membrane sub-part. **Claim 29** The first fixed end is partially fixed The first fixed end includes at least one fixed part and at least one non-fixed part, the at least one fixed part is fixed, and the at least one non-fixed part is not fixed The at least one non-fixed part of the first fixed end moves in the direction of the normal of the base on which the sound generation cell is disposed when the first membrane sub-part is actuated, the sound generation cell according to claim 11. **Claim 30** The first membrane sub-part has at least one first inner slit and at least one second inner slit At least one non-fixed part of the first fixed end is defined by the at least one first inner slit The at least one second inner slit extends from the first fixed end towards the first slit The first slit is formed between the first membrane sub-part and the second membrane sub-part, and the non-fixed end of the first membrane sub-part is defined by the first slit, the sound generation cell according to claim 29. **Claim 31** The first membrane sub-part includes two second inner slits extending from the first fixed end towards the first slit The sound generation cell according to claim 30, wherein a part of the actuating layer is arranged between the two second inner slits.

32. The sound generation cell according to claim 30, wherein the at least one fixed part and the at least one non-fixed part are divided according to the at least one first inner slit.

33. A method of manufacturing a sound generation cell, comprising: providing a wafer including a first layer and a second layer; patterning the first layer of the wafer to form at least one trench line; placing the wafer on a substrate; wherein the first layer includes a membrane, and at least one slit is formed in and penetrates through the membrane by the at least one trench line; the membrane includes a first membrane sub-part and a second membrane sub-part, and the first membrane sub-part and the second membrane sub-part face each other; the first membrane sub-part includes a first fixed end that is completely or partially fixed, and an end of the first membrane sub-part other than the first fixed end is not fixed; the second membrane sub-part includes a second fixed end that is completely or partially fixed, and an end of the second membrane sub-part other than the second fixed end is not fixed; a first ratio of the membrane is greater than 2, and the first ratio of the membrane is a ratio of a first length of a first side of the membrane to a second length of a second side of the membrane; Manufacturing method.

34. further comprising forming a recess structure at a corner of the sound generation cell. The manufacturing method according to claim 33, further comprising.

35. further comprising forming a latch structure configured to limit a moving distance of the first membrane sub-part and the second membrane sub-part; wherein the moving distance is a distance along a normal direction of a base on which the sound generation cell is arranged. The manufacturing method according to claim 33.

36. further comprising forming a spring between the first membrane sub-part and the second membrane sub-part. The manufacturing method according to claim 33, further comprising.

37. further comprising patterning the first layer of the wafer such that the membrane further includes a third membrane sub-part and a fourth membrane sub-part; wherein the third membrane sub-part is configured to reduce acoustic leakage on a first side of the sound generation cell; the fourth membrane sub-part is configured to reduce acoustic leakage on a second side of the sound generation cell. The manufacturing method according to claim 33.

38. Forming at least one first inner slit and at least one second inner slit in the first film sub-part; further comprising; the first fixed end is partially fixed; the first fixed end includes at least one fixed portion and at least one non-fixed portion; at least one non-fixed portion of the first fixed end is defined by the at least one first inner slit; The manufacturing method according to claim 33, wherein the at least one fixed portion and the at least one non-fixed portion are divided according to the at least one second inner slit.

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