Electronic device and airflow generating package

Abstract

To provide an electronic device with improved heat dissipation.SOLUTION: An electronic device includes an operating component, a heat conduction component, and an airflow generating package. The operating component generates heat during operation. The heat conduction component is configured to conduct heat emitted by the operating component, and the operating component is disposed on the heat conduction component. The airflow generating package is disposed at the edge of the electronic device. The airflow generating package includes a membrane structure, which includes a pair of flaps, and the pair of flaps includes a first flap and a second flap. The flap pair operates at ultrasonic speed to generate airflow. The heat conduction component extends toward the airflow generating package so that the airflow generated by the airflow generating package flows through the heat conduction component and dissipates the heat emitted from the operating component via the heat conduction component.SELECTED DRAWING: Figure 11

Description

Technical Field

[0001] This application relates to an electronic device and an airflow generating package, and more particularly to an electronic device and an airflow generating package with improved heat dissipation performance.

Background Art

[0002] In recent years, the thermal management of devices has a great impact on the performance of components within the device, and the performance of the device is highly related to thermal management. For example, an electronic device (such as a smartphone or a tablet), which is a type of device, requires more complex operations with the trend of being thinner, so the power consumption of the battery is also increasing. On the other hand, the demand for AI (Artificial Intelligence) computing is increasing rapidly, and thermal management is essential for AI computing performance. Therefore, the importance of thermal management for the future viability of electronic devices (such as palm-sized electronic devices, servers in data centers) is increasing.

[0003] Therefore, to improve the performance of the device, it is necessary to improve thermal management (such as heat dissipation).

Summary of the Invention

[0004] Therefore, a first object of the present invention is to provide an electronic device with improved heat dissipation performance due to the presence of components configured to generate a plurality of air pulses. Further, the present invention provides a related airflow generating package. Further, the present invention provides a semiconductor device which is a type of the above electronic device.

[0005] One embodiment of the present invention provides an electronic device including an operating component, a heat conduction component, and an airflow generation package. The operating component generates heat during operation. The heat conduction component is configured to conduct the heat generated by the operating component, and the operating component is disposed on the heat conduction component. The airflow generation package is disposed by an edge of the electronic device. The airflow generation package includes a membrane structure, the membrane structure includes a flap pair, and the flap pair includes a first flap and a second flap. The flap pair operates at an ultrasonic rate to generate an airflow. The heat conduction component extends toward the airflow generation package such that the airflow generated by the airflow generation package flows through the heat conduction component and dissipates the heat emitted from the operating component through the heat conduction component.

[0006] One embodiment of the present invention provides an airflow generation package including a base and a membrane structure. The membrane structure is disposed on the base and operates at an ultrasonic rate such that the airflow generation package generates an airflow. An air flow path is formed in the base, and the airflow flows through the air flow path. The flow direction of the airflow in the air flow path is perpendicular to the normal direction of the membrane structure.

[0007] One embodiment of the present invention provides an airflow generation package including a membrane structure and a coating structure. The membrane structure operates at an ultrasonic rate such that the airflow generation package generates an airflow. A plurality of protrusions are disposed on the coating structure to enhance heat dissipation when the airflow generated by the membrane structure flows.

[0008] One embodiment of the present invention provides an airflow generation package including a housing, a membrane structure, and a chamber. The membrane structure is disposed in the housing and operates at an ultrasonic rate such that the airflow generation package generates an airflow. The chamber is formed at a side of the membrane structure. An air opening is formed in a side wall of the housing.

[0009] These and other objects of the present invention will become apparent to those skilled in the art after reading the following detailed description of the preferred embodiments shown in the various figures and drawings.

Brief Description of the Drawings

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DETAILED DESCRIPTION OF THE INVENTION

[0011] To provide a better understanding of the present invention to those skilled in the art, preferred embodiments of the main components and typical materials or ranges of parameters are detailed in the following description. These preferred embodiments of the present invention are shown in the accompanying drawings together with numbered elements in order to explain in detail the content and effects to be achieved. Note that the drawings are simplified schematic diagrams, and since the materials and parameter ranges of the main components are described based on current technology, only the components and combinations related to the present invention are shown in order to provide a clearer description of the basic structure, implementation or operation method of the present invention. The components are actually more complex, and the ranges of parameters or materials used may evolve according to the progress of future technology. In addition, for ease of explanation, the components shown in the drawings may not represent their actual number, shape and dimensions. Details can be adjusted according to the design requirements.

[0012] In the following description and claims, the terms "comprising", "consisting of" and "having" are used in an open-ended sense and should be interpreted to mean "including but not limited to". Therefore, when the terms "comprising", "consisting of" and / or "having" are used in the description of the present invention, it is indicated that the corresponding features, regions, steps, operations and / or components exist, but are not limited to the existence of one or more corresponding features, regions, steps, operations and / or components.

[0013] In the following description and claims, when an element or layer is referred to as being "connected to" another element or layer, it may be directly connected to the other element or layer or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly connected to" another element or layer, no intervening elements or layers are present.

[0014] In the following description and claims, when "component A1 is formed by B1", B1 is present in the formation of component A1 or B1 is used in the formation of component A1, and the presence and use of one or more other features, regions, steps, operations, and / or components are not excluded in the formation of component A1.

[0015] In the following description and claims, the term "chamber" generally means an object having an empty space inside itself. In the following description and claims, the term "void" means an empty space within an object. For example, the void of a chamber is the empty space that exists within the chamber, and the chamber is the shell of this void.

[0016] In the following description and claims, the term "substantially" generally means that small deviations may or may not be present. For example, the terms "substantially parallel" and "substantially along" mean that the angle between two components can be less than a specific angle threshold, e.g., 10 degrees, 5 degrees, 3 degrees. For example, the term "substantially aligned" means that the deviation between two components can be less than a specific deviation threshold, e.g., 2 μm or 1 μm. For example, the term "substantially the same" means that the deviation is, e.g., within 10% of a predetermined value or range, or within 5%, 3%, 2%, 1%, or 0.5% of a predetermined value or range.

[0017] In this specification and the claims, the term "horizontal direction" generally means a direction parallel to the horizontal plane, and the term "horizontal plane" generally means a plane parallel to the directions X and Y in the drawing (i.e., the directions X and Y of the present invention can be regarded as horizontal directions), the terms "vertical direction" and "upper surface direction" generally mean directions parallel to the direction Z in the drawing and perpendicular to the horizontal direction, and the directions X, Y, and Z are perpendicular to each other. In this specification and the claims, the term "top view" generally means an observation result seen along the vertical direction. In this specification and the claims, the term "cross-sectional view" generally means a structure cut along the vertical direction and seen along the horizontal direction.

[0018] The terms first, second, third, etc. may be used to describe various components, but such components are not limited by such terms. Such terms are used only to distinguish the components in the specification from other components, and when not described in the specification, such terms have nothing to do with the manufacturing order. Although the same terms may not be used in the claims, instead, the terms first, second, third, etc. may be used with respect to the order in which the elements are claimed. Therefore, in the following description, the first component may be the second component in the claims.

[0019] It should be noted that the technical features in different embodiments described below can be replaced, recombined, or combined with each other to form other embodiments without departing from the spirit of the present invention. That is, the technical features described in the embodiments can be mixed or combined in various ways as long as there is no contradiction between them.

[0020] In the present invention, the airflow generating component is configured to generate an airflow, and heat dissipation is implemented and / or improved by the airflow caused by the airflow generating component. In the present invention, the airflow generating component may be designed based on requirements, and the airflow generating component can be formed by any suitable method. Below, some embodiments of the airflow generating component will be described.

[0021] For example, the airflow generating component may be an airflow generating chip, and the airflow generating chip may be formed by a semiconductor manufacturing process. For example, the airflow generating chip may be a MEMS chip including a microelectromechanical system (MEMS) structure, but is not limited thereto.

[0022] Referring to FIGS. 1 and 2, FIG. 1 is a schematic cross-sectional view showing an airflow generating chip according to an embodiment of the present invention, and FIG. 2 is a schematic cross-sectional view showing a common mode operation and a differential mode operation of the airflow generating chip according to an embodiment of the present invention. The airflow generating chip AFC shown in FIG. 1 is in an intermediate state S1. As shown in FIGS. 1 and 2, the airflow generating chip AFC is configured to generate an airflow. In some embodiments, the airflow generating chip AFC may be configured to generate a plurality of air pulses, the airflow may be composed of air pulses, and the airflow generating chip AFC may generate air pulses at any suitable pulse rate. For example, the airflow generating chip AFC may generate air pulses at an ultrasonic (pulse) rate higher than the maximum audible frequency of humans (e.g., 16 kHz, 20 kHz, 22 kHz) so that a user cannot hear the operation of the airflow generating chip AFC configured to generate the airflow and / or air pulses, but is not limited thereto.

[0023] As shown in FIG. 1, the airflow generating chip AFC may include at least one anchor structure AR and at least one membrane structure FS fixed by / on the anchor structure AR. The anchor structure AR may be disposed outside the membrane structure FS. The membrane structure FS and the anchor structure AR may include any suitable material. In some embodiments, the membrane structure FS and the anchor structure AR may individually include silicon (e.g., single crystal silicon or polycrystalline silicon), silicon compounds (e.g., silicon carbide, silicon oxide), germanium, germanium compounds, gallium, gallium compounds (e.g., gallium nitride or gallium arsenide), other suitable materials, or combinations thereof, but are not limited thereto. In some embodiments, the membrane structure FS and the anchor structure AR may have the same material.

[0024] In the operation of the airflow generation chip AFC, the membrane structure FS may be actuated to have an operation, and the anchor structure AR may be fixed. That is, the anchor structure AR may be a fixed end (or fixed edge) with respect to the membrane structure FS during the operation of the airflow generation chip AFC. In some embodiments, the membrane structure FS may be actuated to move up and down, but is not limited thereto. In the present invention, the terms "move up" and "move down" mean that the membrane structure FS moves substantially along the direction Z. Further, "upward" means the direction Z (i.e., the +Z direction), and "downward" may mean the direction opposite to the direction Z (i.e., the -Z direction). That is, the operating direction of the membrane structure FS is parallel to the direction Z.

[0025] As shown in FIG. 1, the membrane structure FS of the airflow generation chip AFC includes at least one slit SL, and the membrane structure FS is divided into a plurality of flaps FL by the slit SL (i.e., the flaps FL are separated from each other by the slit SL, and the slit SL may be the boundary of the flaps FL). The number of flaps FL can be designed based on requirements. For example, as shown in FIG. 1, the membrane structure FS is divided into a first flap FL1 and a second flap FL2 by the slit SL, the first flap FL1 and the second flap FL2 are arranged opposite to each other, and at least one slit SL may be between the first flap FL1 and the second flap FL2. Note that the first flap FL1 and the second flap FL2 that are opposite to each other may form a flap pair FP in the membrane structure FS.

[0026] In FIG. 1, the flap FL of the membrane structure FS has at least one fixed edge (or fixed end) fixed to the anchor structure AR and at least one free edge (or free end) that is not permanently fixed to any component within the airflow generation chip AFC, and the fixed edge and the free edge of each flap FL can be designed based on requirements. For example (as shown in FIG. 1), the slit SL defines one free edge of the first flap FL1 and one free edge of the second flap FL2, and this free edge of the first flap FL1 is opposite to the fixed edge of the first flap FL1, and this free edge of the second flap FL2 may be opposite to the fixed edge of the second flap FL2, but is not limited thereto.

[0027] In the present invention, the number of slits SL included in the membrane structure FS may be adjusted based on requirements, the slit SL may be disposed at any appropriate position of the membrane structure FS, and may have any appropriate upper surface pattern. For example, the slit SL may be a straight slit, a curved slit, a combination of straight slits, a combination of curved slits, or a combination of straight slits and curved slits.

[0028] The airflow generation chip AFC may include an actuator AT configured to operate the membrane structure FS to generate an airflow and / or an air pulse. The actuator AT may be disposed at any appropriate position, and the position of the actuator AT may be related to the operating method of the actuator AT. For example, in FIG. 1, the actuator AT may overlap the membrane structure FS in the direction Z, but is not limited thereto. For example, in FIG. 1, the actuator AT may be disposed on the membrane structure FS, but is not limited thereto. For example, in FIG. 1, the actuator AT may contact the membrane structure FS, but is not limited thereto.

[0029] As shown in FIG. 1, the actuator AT may include a plurality of operating portions disposed on a plurality of flaps FL of the membrane structure FS. For example (as shown in FIG. 1), the actuator AT includes a first operating portion AT1 disposed on the first flap FL1 and a second operating portion AT2 disposed on the second flap FL2.

[0030] Actuator AT has a monotonic electromechanical conversion function with respect to the movement of the membrane structure FS along the direction Z. In some embodiments, actuator AT may include, but is not limited to, a piezoelectric actuator, an electrostatic actuator, a nanoscope electrostatic drive (NED) actuator, an electromagnetic actuator, or any other suitable actuator. For example, in one embodiment, actuator AT may include a piezoelectric actuator, and the piezoelectric actuator may include, for example, two electrodes and a piezoelectric material layer (e.g., lead zirconate titanate, PZT) disposed between those electrodes. The piezoelectric material layer may operate the membrane structure FS based on a drive signal (e.g., a drive voltage and / or a drive voltage difference between two electrodes) received by the electrodes, although not limited thereto. For example, in another embodiment, actuator AT may include an electromagnetic actuator (e.g., a planar coil). The electromagnetic actuator may operate the membrane structure FS based on a received drive signal (e.g., a drive current) and a magnetic field (i.e., the membrane structure FS may be operated by an electromagnetic force), although not limited thereto. For example, in yet another embodiment, actuator AT may include an electrostatic actuator (such as a conductive plate) or an NED actuator. The electrostatic actuator or the NED actuator may operate the membrane structure FS based on a received drive signal (e.g., a drive voltage) and a static magnetic field (i.e., the membrane structure FS may be operated by an electrostatic force), although not limited thereto. Hereinafter, actuator AT may be, for example, a piezoelectric actuator.

[0031] For example, when the airflow generation chip AFC is a MEMS chip, the membrane structure FS, the anchor structure AR, and the actuator AT are MEMS structures within the MEMS chip, although not limited thereto. Further, since the airflow generation chip AFC generates an airflow and / or an air pulse by operating the membrane structure FS via the actuator AT, the airflow generation chip AFC may be, although not limited thereto, a fanless blower.

[0032] In the present invention, the membrane structure FS (flap FL) is actuated / controlled to be moved upward and downward by the actuator AT so that the vent opening OPV related to the slit SL is formed / opened and closed (i.e., the membrane structure FS is configured to form / open and close the vent opening OPV). The vent opening OPV is formed between the both side walls of the slit SL (i.e., the vent opening OPV is formed between the first flap FL1 and the second flap FL2). That is, the vent opening OPV is formed by the slit SL. In the condition where the "vent opening OPV is closed / sealed", it is difficult for air to pass through the space between the two opposing side walls of the slit SL, which means that the flow resistance of the vent opening OPV is large or greater than the threshold value. In the condition where the "vent opening OPV is formed / opened", air can easily pass through the space between the both side walls of the slit SL, which means that the flow resistance of the vent opening OPV is small or less than the threshold value.

[0033] In the present invention, the airflow generation chip AFC can generate an airflow and / or an air pulse by any suitable airflow generation method. For example, the airflow generation method related to FIGS. 1 and 2 will be described below. This airflow generation method generates an airflow and / or an air pulse by changing the state of the vent opening OPV and changing the air pressure on both sides of the membrane structure FS.

[0034] As shown in FIG. 1, in the intermediate state S1 of the airflow generation chip AFC, the membrane structure FS (flap pair FP) is actuated and maintained in a first posture that is substantially horizontal in a cross-sectional view, so that the vent opening OPV can be temporarily closed (or temporarily sealed) to make it difficult for air to pass through the space between the both side walls of the slit SL. In FIG. 1, the both side walls of the slit SL (i.e., the free edges of the first flap FL1 and the free edges of the second flap FL2) partially or completely overlap in the horizontal direction (the gap of the slit SL is shown in FIG. 1) to close the vent opening OPV and have a greater flow resistance.

[0035] In FIG. 1, since the size of the gap GP of the slit SL (or the width of the slit SL) needs to be sufficiently small, the airflow passing through the gap GP (i.e., the narrow channel) can be significantly attenuated by the viscous force / resistance along the wall of the airflow path known as the boundary layer effect in the field of fluid mechanics. Therefore, the airflow flowing through the gap GP in the intermediate state S1 is very small or negligible. That is, when the airflow generation chip AFC is in the intermediate state S1, the vent opening OPV is closed and further sealed. The size of the gap GP of the slit SL (or the width of the slit SL) can be designed based on requirements. For example, the size of the gap GP of the slit SL (or the width of the slit SL) can be, but is not limited to, 5 μm or less, 3 μm or less, 2 μm or less, or 1 μm to 2 μm. Note that the size of the vent opening OPV in the intermediate state S1 is equal to the size of the gap GP.

[0036] In FIG. 2, the membrane structure FS (flap pair FP) may be actuated to perform a common mode operation S2 in which the first flap FL1 and the second flap FL2 are simultaneously actuated to move in the same direction. For example, the first flap FL1 and the second flap FL2 may be simultaneously actuated to move upward or downward. For example, at the end of the common mode operation S2, the distance between the first flap FL1 and the first position and the distance between the second flap FL2 and the first position are the same.

[0037] As shown in FIG. 2, when the membrane structure FS (flap pair FP) is actuated to perform the common mode operation S2, the vent opening OPV may be temporarily closed (or temporarily sealed) so that air flow between the two opposing side walls of the slit SL becomes difficult. In FIG. 2, the two opposing side walls of the slit SL (i.e., the free edges of the first flap FL1 and the second flap FL2) overlap partially or entirely in the horizontal direction to close the vent opening OPV and increase the flow resistance.

[0038] When operating the membrane structure FS (flap pair FP) to perform the common mode operation S2, the vent opening OPV is temporarily closed, resulting in a greater flow resistance, so the air pressures on both sides of the membrane structure FS are different and a pressure fluctuation occurs. That is, the membrane structure FS (flap pair FP) performs the common mode operation S2 to form a pressure fluctuation.

[0039] In FIG. 2, the membrane structure FS (flap pair FP) can be operated so that the first flap FL1 and the second flap FL2 are simultaneously operated and moved in opposite directions to perform the differential mode operation S3. For example, (as shown in FIG. 2) the first flap FL1 can be operated to move downward, and the second flap FL2 can be operated to move upward, or the first flap FL1 can be operated to move upward, and the second flap FL2 can be operated to move downward. For example, at the end of the differential mode operation S3, the distance between the first flap FL1 and the first position is the same as the distance between the second flap FL2 and the first position.

[0040] As shown in FIG. 2, when operating the membrane structure FS (flap pair FP) to perform the differential mode operation S3, the vent opening OPV may be temporarily opened so that air can easily pass through the space between the two opposing side walls of the slit SL. In FIG. 2, the two opposing side walls of the slit SL (i.e., the free edges of the first flap FL1 and the second flap FL2) are arranged so as not to overlap in the horizontal direction, and the vent opening OPV is opened to reduce the flow resistance.

[0041] When operating the membrane structure FS (flap pair FP) to perform the differential mode operation S3, if there is a pressure fluctuation between both sides of the membrane structure FS, due to this pressure fluctuation and the reduction in the flow resistance of the vent opening OPV, air can flow naturally through the vent opening OPV to generate an air current and / or an air pulse.

[0042] Therefore, the airflow generation method of this embodiment can generate an airflow and / or an air pulse by operating the membrane structure FS (flap pair FP) to perform the common mode operation S2 and the differential mode operation S3. For example, one period of the airflow generation method of this embodiment may include four steps, although not limited thereto. The first step of the airflow generation method may be to operate the membrane structure FS (flap pair FP) to perform the common mode operation S2 so that there is a pressure fluctuation between both sides of the membrane structure FS. The second step of the airflow generation method may be to operate the membrane structure FS (flap pair FP) to restore the intermediate state S1. The third step of the airflow generation method may be to operate the membrane structure FS (flap pair FP) to perform the differential mode operation S3, and due to this pressure fluctuation and the reduction of the flow resistance of the vent opening OPV, air naturally passes through the vent opening OPV to generate an airflow and / or an air pulse. The fourth step of the airflow generation method may be to operate the membrane structure FS (flap pair FP) to restore the intermediate state S1. By repeating the cycle of the airflow generation method of this embodiment, air pulses can continuously form an airflow.

[0043] The frequency of the cycle may be designed based on the pulse repetition number of the air pulse, and the frequency of the cycle can be synchronized with the pulse repetition number of the air pulse. In the present invention, that the frequency / repetition number is synchronized with another frequency / repetition number generally means that this frequency / repetition number is a rational number (i.e., N / M, where N and M represent integers) multiplied by this other frequency / repetition number. In some embodiments, the frequency of the cycle can be the same as the pulse repetition number of the air pulse. In some embodiments, the membrane structure FS (flap pair FP) performs the common mode operation S2 to form an air pressure fluctuation at a pressure fluctuation frequency synchronized with the frequency of the cycle, and the membrane structure FS (flap pair FP) performs the differential mode operation S3 to form the vent opening OPV at an opening ratio synchronized with the pressure fluctuation frequency and the frequency of the cycle. For example, the frequency of the cycle, the pulse repetition number of the air pulse, the pressure fluctuation frequency, and the opening ratio are the same. For example, when the airflow generation chip AFC generates air pulses at an ultrasonic rate, the pressure fluctuation frequency and the opening ratio are synchronized with this ultrasonic rate.

[0044] The direction of the airflow and the flow of the air pulse is determined by the direction of the common mode operation S2 performed by the membrane structure FS (flap pair FP). When the membrane structure FS (flap pair FP) is actuated to be moved upward (or downward) to perform only one type of common mode operation S2 in the first step of several cycles, since the types of air pressure fluctuations in the first step of these cycles are the same, the direction of the flow of the air pulses (third step) generated in these cycles is the same. Therefore, the airflow generation chip AFC generates a single-ended (SE) air pulse or an SE raker air pulse. Also, the air pulse may be asymmetric.

[0045] In the present invention, the waveform of the SE air pulse or the waveform of the SE raker air pulse means (substantially) unipolar with respect to a specific level. For example, the SE air pulse or the SE raker air pulse may mean a waveform that is (substantially) unipolar with respect to the ambient pressure (e.g., 1 ATM). That is, the SE air pulse or the SE raker air pulse constitutes a net air movement or a net airflow in a single direction.

[0046] The airflow generation method of the present invention is not limited to the above. In one period of the airflow generation method, the number of steps and the order of the operating operations of the membrane structure FS (flap pair FP) can be designed based on requirements.

[0047] In another aspect, for any common mode operation S2 of the flap pair FP, a pair of acoustic pressure waves, one in one space of the membrane structure FS and one in the space on the opposite side of the membrane structure FS, are generated. These two acoustic pressure waves are of the same magnitude but opposite in polarity. As a result, when the vent opening OPV is opened, the air pressure differences of the two air volumes near the vent opening OPV are neutralized with each other. Therefore, when the timing at which the differential mode operation S3 reaches its peak (i.e., the timing at which the vent opening OPV is maximized) coincides with the acceleration timing at which the common mode operation S2 reaches its peak, the acoustic pressure that should be generated by the common mode operation S2 is suppressed / removed by the opening of the vent opening OPV, and the magnitudes of the two acoustic pressures are the same but the polarities are opposite, and are automatically neutralized between the two acoustic pressures on both sides of the membrane structure FS. This means that when the vent opening OPV is opened, the airflow generation chip AFC generates (substantially) a net zero air pressure. Therefore, when the opening period of the vent opening OPV overlaps with one of the (two) polarities of the acceleration of the common mode operation S2 of the flap pair FP, the airflow generation chip AFC generates an SE air pulse or an SE racer air pulse.

[0048] Furthermore, by matching the opening timing of the vent opening OPV with the acceleration timing of the common mode operation S2 of the flap pair FP, the airflow generation chip AFC can generate an asymmetric air pulse.

[0049] In some embodiments, the membrane structure FS (flap pair FP) can be actuated to perform the common mode operation S2 and the differential mode operation S3 simultaneously, without limitation. In some embodiments, without limitation, another portion may be included such that the common mode operation S2 and the differential mode operation S3 are performed simultaneously by the membrane structure FS.

[0050] In the present invention, the actuator AT can receive any suitable signal to operate the membrane structure FS. In some embodiments, the membrane structure FS is operated by a modulation drive signal SM to perform a common mode operation S2 to form a pressure fluctuation, and the membrane structure FS is operated by a demodulation drive signal SV to perform a differential mode operation S3 to form a vent opening OPV. Both the modulation drive signal SM and the demodulation drive signal SV are related to the output amplitude of the air pulse.

[0051] Furthermore, the modulation frequency of the modulation drive signal SM and the demodulation frequency of the demodulation drive signal SV are related to the pulse repetition number of the air pulse. For example, the modulation frequency and the demodulation frequency can be synchronized with the pulse repetition number of the air pulse so that, although not limited, the modulation frequency and the demodulation frequency can be synchronized with the pressure fluctuation frequency of the pressure fluctuation, the opening ratio of the vent opening OPV, and the frequency of the period.

[0052] In some embodiments, the actuator AT can receive the modulation drive signal SM and the demodulation drive signal SV at different timings, although not limited. In some embodiments, the actuator AT includes, although not limited, a plurality of parts in a top view, one part can receive the modulation drive signal SM, and another part can receive the demodulation drive signal SV. In some embodiments, the actuator AT includes, although not limited, a first electrode and a second electrode, the first electrode can receive the modulation drive signal SM, and the second electrode can receive the demodulation drive signal SV.

[0053] Furthermore, by controlling the modulation drive signal SM and / or the demodulation drive signal SV, the flow direction of the air flow (air pulse) generated by the air flow generation chip AFC may be made reversible. For details, reference may be made to US Patent Application No. 18 / 624105, where the description is omitted here for the sake of brevity.

[0054] (A) An airflow generating MEMS device, i.e., an airflow generating chip AFC (e.g., structure, drive signal SM / SV, and operation), and details of their design / operation principles can be found in U.S. Patent No. 11,943,585, U.S. Application No. 18 / 321,757, and U.S. Application No. 18 / 624,105 filed by the same applicant. Therefore, the contents of these U.S. patents and U.S. applications are incorporated herein by reference.

[0055] In some embodiments of the present invention, the airflow generating component may be the above-mentioned airflow generating chip AFC or the airflow generating component may be a component including the above-mentioned airflow generating chip AFC. For example, the airflow generating component may be, but is not limited to, a semiconductor component provided with the above-mentioned airflow generating chip AFC, an airflow generating package provided with the above-mentioned airflow generating chip AFC, or other components provided with the above-mentioned airflow generating chip AFC. Some embodiments of the semiconductor component SC provided with the above-mentioned airflow generating chip AFC are shown in FIGS. 3 and 4, and some embodiments of the airflow generating package PG having the above-mentioned airflow generating chip AFC are shown in FIGS. 5 to 10, but the semiconductor component and the airflow generating package are not limited by the following embodiments.

[0056] That is, the airflow generating chip AFC may be applied to the present application or any embodiment described below (e.g., airflow generating package, semiconductor device, electronic device), and the features and characteristics of the airflow generating chip AFC are included in the embodiments of the present application. Note that a semiconductor device is a type of electronic device, and the semiconductor device may be a semiconductor component provided with the above-mentioned airflow generating chip AFC or may include an airflow generating package provided with the above-mentioned airflow generating chip AFC.

[0057] Referring to FIG. 3, FIG. 3 is a schematic cross-sectional view showing a semiconductor component including an airflow generation chip according to an embodiment of the present invention. As shown in FIG. 3, the semiconductor component SC1 including the above airflow generation chip AFC can be formed by a semiconductor manufacturing process. For example, the semiconductor component SC1 can be, but is not limited to, a 2.5-dimensional (2.5D) integrated circuit or a 3-dimensional (3D) integrated circuit (e.g., the semiconductor component SC1 shown in FIG. 3 is a 2.5D integrated circuit). For example, a semiconductor device including the semiconductor component SC1 can be or can be disposed within a 2.5D semiconductor package, a 3D semiconductor package, or a CoWoS (Chip-on-Wafer-on-SuBstrate) package.

[0058] In the semiconductor component SC1 shown in FIG. 3, the airflow generation chip AFC can be disposed on the base BSS of the semiconductor component SC1. The base BSS of the semiconductor component SC1 can be a chip or an interposer (e.g., a wafer layer). For example, the base BSS can include silicon, germanium, any other suitable semiconductor material, or a combination thereof. In FIG. 3, the base BSS can be, but is not limited to, an interposer (e.g., a silicon interposer), and a conductive structure CV (e.g., a through-silicon via (TSV)) can be disposed within the base BSS and configured to be electrically connected between two electronic elements disposed on both sides of the base BSS.

[0059] In FIG. 3, the base BSS can have an upper surface parallel to the directions X and Y (i.e., the upper surface of the base BSS can be a horizontal plane), and the normal direction of the upper surface of the base BSS can be parallel to the direction Z.

[0060] The semiconductor component SC1 may be disposed on the base BSS and further include at least one chip CP adjacent to the airflow generating chip AFC. In FIG. 3, the semiconductor component SC1 includes, without limitation, four chips CP1, CP2, CP3, and CP4, where chips CP1 and CP3 are disposed on the base BSS, chip CP2 is disposed (stacked) on chip C1, and is electrically connected to chip CP1 via at least one connection structure CM (e.g., solder or conductive ball), and chip CP4 is disposed (stacked) on chip C3 and may be electrically connected to chip CP3 via at least one connection structure CM (e.g., solder or conductive ball). Note that the airflow generating chip AFC can be used to dissipate the heat generated by the chip CP. Note that this connection structure CM such as solder or conductive ball has a heat conduction effect (i.e., the conductive ball can also be called a heat conductive ball), so it can dissipate heat and enhance the heat dissipation effect of the semiconductor component SC1.

[0061] In the present invention, the semiconductor component SC1 includes at least one first air opening OPS1 and at least one second air opening OPS2, and the airflow generated by the airflow generating chip AFC passes through the first air opening OPS1 and the second air opening OPS2. The airflow flows into the semiconductor component SC1 through the first air opening OPS1 or the second air opening OPS2 (i.e., one of the first air opening OPS1 and the second air opening OPS2 can be an airflow inlet), and the airflow can flow out of the semiconductor component SC1 through the first air opening OPS1 or the second air opening OPS2 (i.e., the other of the first air opening OPS1 and the second air opening OPS2 can be an airflow outlet). In some embodiments, since the direction of the airflow (air pulse) generated by the airflow generating chip AFC is reversible, when the airflow (air pulse) is reversed, the airflow inlet and the airflow outlet are interchanged.

[0062] The first air opening OPS1 and the second air opening OPS2 are designed based on requirements, and the number of the first air opening OPS1 and the number of the second air opening OPS2 can be designed based on requirements. For example, in FIG. 3, the semiconductor component SC1 may include, but is not limited to, one first air opening OPS1 and one second air opening OPS2. The base BSS has a first air opening OPS1 that overlaps with the airflow generating chip AFC (that is, the first air opening OPS1 is formed at the bottom of the airflow generating chip AFC), and the vent opening OPV (that is, the slit SL) of the airflow generating chip AFC may be the second air opening OPS2 (that is, the second air opening OPS2 is formed at the top of the airflow generating chip AFC).

[0063] Also, the design of the first air opening OPS1 and the second air opening OPS2 may be related to the airflow path within the semiconductor component SC1. For example, the direction of the airflow passing through the first air opening OPS1 may be parallel or perpendicular to the direction of the airflow passing through the second air opening OPS2, but is not limited to this (for example, in FIG. 3, the direction of the airflow passing through the first air opening OPS1 may be parallel to the direction of the airflow passing through the second air opening OPS2).

[0064] Referring to FIG. 4, FIG. 4 is a schematic cross-sectional view showing a semiconductor component provided with an airflow generating chip according to another embodiment of the present invention. As shown in FIG. 4, the difference between this embodiment and the embodiment shown in FIG. 3 is the type of the semiconductor component SC2 in this embodiment. For example, in FIG. 4, the semiconductor component SC2 may be a three-dimensional integrated circuit, and the base BSS on which the airflow generating chip AFC is disposed (stacked) may be the chip CP and / or the interposer ITP. The airflow generating chip AFC may be electrically connected to the chip CP via at least one connection structure CM (for example, solder or conductive balls), but is not limited to this. In FIG. 4, the connection structure CM may be disposed between the airflow generating chip AFC and the chip CP.

[0065] Furthermore, the designs of the first air opening OPS1 and the second air opening OPS2 in this embodiment are different from those in the embodiment shown in FIG. 3. For example, in FIG. 4, the first air opening OPS1 exists between the chip CP (base BSS) and the airflow generation chip AFC, and may be a space formed by the connection structure CM (for example, the first air opening OPS1 is behind the connection structure CM in FIG. 4). The vent opening OPV (i.e., the slit SL) of the airflow generation chip AFC may be the second air opening OPS2. The direction of the airflow passing through the first air opening OPS1 is not limited, but may be perpendicular to the direction of the airflow passing through the second air opening OPS2. Similarly, the first air opening OPS1 is formed on the bottom surface of the airflow generation chip AFC, and the second air opening OPS2 is formed on the upper surface of the airflow generation chip AFC.

[0066] Referring to FIG. 5, FIG. 5 is a schematic cross-sectional view showing four designs of an airflow generation package including an airflow generation chip according to an embodiment of the present invention. Note that the airflow generation chip AFC can be directly mounted on the airflow generation package PG (as shown in FIG. 5), or the airflow generation chip AFC can be a chip of a semiconductor component SC (the 2.5D integrated circuit shown in FIG. 3 or the 3D integrated circuit shown in FIG. 4) mounted on the airflow generation package PG. The airflow generation package PG can be a type of semiconductor device.

[0067] In the present invention, the airflow generation package PG can be applied to any suitable package using any suitable method for mounting the airflow generation chip AFC or the semiconductor component SC together with the airflow generation chip AFC. For example, the airflow generation package PG can be applied to a chip scale package (CSP), a 2.5D semiconductor package, a 3D semiconductor package, a CoWoS package, a ball grid array package (BGA package), or other suitable packages. The structure of the airflow generation package PG and the components included in the airflow generation package PG can correspond to the type of the airflow generation package PG. For example (not shown), the airflow generation chip AFC can be arranged in a flip chip manner, although not limited thereto.

[0068] In the airflow generation package PG shown in FIG. 5, the airflow generation package PG includes a package housing PH in which an airflow generation chip AFC or a semiconductor component SC including the airflow generation chip AFC is disposed, and the airflow generation package PG is protected by the package housing PH. That is, the airflow generation chip AFC is mounted within the package housing PH. Note that within the package housing PH, there are a first cavity CY1 and a second cavity CY2 partitioned by a film structure FS of the airflow generation chip AFC.

[0069] As shown in FIG. 5, the package housing PH of the airflow generation package PG includes a base BSP, the airflow generation chip AFC is disposed on the base BSP, and the first cavity CY1 may exist between the base BSP and the film structure FS of the airflow generation chip AFC. The base BSP may be rigid or flexible, and the base BSP may include glass, plastic, quartz, sapphire, metal, polymer (e.g., polyimide (PI), polyethylene terephthalate (PET)), any other suitable material, or a combination thereof. As an example, the base BSP may be, but is not limited to, a circuit board including a laminate (e.g., a copper-clad laminate, CCL), a land grid array (LGA) substrate, or any other suitable substrate including a conductive material.

[0070] In FIG. 5, the base BSP may have an upper surface parallel to the directions X and Y (i.e., the upper surface of the base BSP may be a horizontal plane), and the normal direction of the upper surface of the base BSP may be parallel to the direction Z.

[0071] In the present invention, the airflow generation chip AFC or the semiconductor component SC including the airflow generation chip AFC can be electrically connected to the conductive element in the base BSP through at least one connection structure having a conductive material. The connection structure can be, but is not limited to, solder, a conductive ball (for example, the conductive ball is used in a BGA package), or other suitable structures. Note that since this connection structure such as solder or a conductive ball can have a heat conduction effect, it can assist in heat dissipation and enhance the heat dissipation effect of the airflow generation package PG.

[0072] As shown in FIG. 5, the package housing PH of the airflow generation package PG can include a covering structure CSV for covering and protecting the airflow generation chip AFC or the semiconductor component SC including the airflow generation chip AFC. A second cavity CY2 can exist between the covering structure CSV and the film structure FS of the airflow generation chip AFC. In FIG. 5, the covering structure CSV may be disposed on the base BSP, and the airflow generation chip AFC can be disposed between the base BSP and the covering structure CSV. For example, the covering structure CSV can include glass, plastic, quartz, sapphire, metal, polymer, any other suitable material, or a combination thereof (for example, the covering structure CSV shown in FIG. 5 can include metal) or the covering structure CSV can be a metal lid.

[0073] In FIG. 5, the covering structure CSV includes a top CSVt and at least one side wall CSVw, and the side wall CSVw is between the base BSP and the top CSVt. For example (as shown in FIG. 5), the covering structure CSV including the top CSVt and the side wall CSVw can be, but is not limited to, a one-piece structure (such as a cap). For example (as shown in FIG. 5), the base BSP and the top CSVt may be substantially parallel to each other, and the side wall CSVw can, but is not limited to, surround the airflow generation chip AFC.

[0074] In the present invention, the package housing PH of the airflow generation package PG may have a plurality of air openings OPP, and the airflow generated by the airflow generation chip AFC can pass through the air openings OPP. In some embodiments, the package housing PH may have at least one air opening OPP1 connected to the first cavity CY1 and at least one air opening OPP2 connected to the second cavity CY2. The airflow can flow into the airflow generation package PG through the air opening OPP1 or the air opening OPP2 (that is, one of the air opening OPP1 and the air opening OPP2 can be an airflow inlet), and the airflow can flow out of the airflow generation package PG through the air opening OPP1 or the air opening OPP2 (that is, the other of the air opening OPP1 and the air opening OPP2 can be an air outlet). In some embodiments, since the direction of the airflow (air pulse) generated by the airflow generation chip AFC is reversible, when the airflow (air pulse) is reversed, the airflow inlet and the airflow outlet are interchanged.

[0075] In some embodiments, the base BSP and the coating structure CSV may be made of the same material. That is, the base BSP can be regarded as part of the coating structure CSV or the coating structure CSV can be regarded as part of the base BSP. Both the base BSP and the coating structure CSV can be regarded as part of the package housing PH.

[0076] The air opening OPP can be formed on the upper surface, the bottom surface or the side wall of the package housing PH. In this embodiment, the air openings OPP1 and OPP2 are designed based on requirements, and the number of the air openings OPP1 and the number of the air openings OPP2 can be designed based on requirements. The design of the air openings OPP1 and OPP2 can be related to the airflow path in the airflow generation package PG. For example, the direction of the airflow passing through the air opening OPP1 can be parallel or perpendicular to the direction of the airflow passing through the air opening OPP2, although not limited. Hereinafter, four designs of the airflow generation package PG shown in FIG. 5 will be described.

[0077] In the first design DS1 of the airflow generation package PG shown in FIG. 5, although not limited, the base BSP has one air opening OPP1 overlapping the airflow generation chip AFC, the top CSVt of the covering structure CSV has one air opening OPP2, and the direction of the airflow passing through the air opening OPP1 can be configured to be parallel to the direction of the airflow passing through the air opening OPP2.

[0078] In the second design DS2 of the airflow generation package PG shown in FIG. 5, although not limited, the base BSP has one air opening OPP1 overlapping the airflow generation chip AFC, the side wall CSVw of the covering structure CSV has one air opening OPP2, and the direction of the airflow passing through the air opening OPP1 can be configured to be perpendicular to the direction of the airflow passing through the air opening OPP2.

[0079] In the third design DS3 of the airflow generation package PG shown in FIG. 5, although not limited, the side wall CSVw of the base BSP has an air opening OPP1, the airflow generation chip AFC (for example, the anchor structure AR of the airflow generation chip AFC) has an airflow path AL connected between the air opening OPP1 and the first cavity CY1, the top CSVt of the covering structure CSV has one air opening OPP2, and the direction of the airflow passing through the air opening OPP1 can be configured to be perpendicular to the direction of the airflow passing through the air opening OPP2. Note that during the operation of the airflow generation package PG, the airflow passes through the airflow path AL, and the flow direction of the airflow in the airflow path AL is perpendicular to the direction Z (for example, the normal direction of the base BSP or the normal direction of the film structure FS).

[0080] In the fourth design DS4 of the airflow generation package PG shown in FIG. 5, although not limited, the side surface of the base BSP has an air opening OPP1, the base BSP has an empty structure EP connected between the air opening OPP1 and the first cavity CY1, the top CSVt of the covering structure CSV has one air opening OPP2, and the direction of the airflow passing through the air opening OPP1 can be configured to be perpendicular to the direction of the airflow passing through the air opening OPP2. For example, the empty structure EP can be, although not limited to, an air passage (e.g., the structure shown in FIG. 6), a chamber (e.g., the structure shown in FIG. 7), or other suitable structures. Note that during the operation of the airflow generation package PG, the airflow passes through an air passage (i.e., a kind of empty structure EP), and the flow direction of the airflow in the air passage is perpendicular to the direction Z (e.g., the normal direction of the base BSP or the normal direction of the film structure FS). Note that during the operation of the airflow generation package PG, the airflow may or may not pass through a chamber (i.e., a kind of empty structure EP).

[0081] In the present invention, the airflow generation package PG is not limited to the above four designs shown in FIG. 5. FIGS. 6 to 10 show modified examples of the above four designs.

[0082] In FIG. 6 showing a modified example of the fourth design DS4 of the airflow generation package PG1, the base BSP can be an air passage AL and has an empty structure EP connected between the air opening OPP1 and the first cavity CY1. Further, the top CSVt of the covering structure CSV can have, although not limited to, a plurality of air openings OPP2. Further, in FIG. 6, although not limited to, the airflow generation chip AFC can include a plurality of film structures FS to increase the airflow generated by the airflow generation chip AFC, and each film structure FS can include a plurality of flap pairs FP (in one film structure FS shown in FIG. 6, three flaps FL belonging to three different flap pairs FP are shown respectively).

[0083] In FIG. 6, the airflow generation package PG1 can be disposed on or in direct contact with the surface SF of a heat source or a heat sink to assist in the dissipation of the heat of the heat source / heat sink.

[0084] In FIG. 7 showing another modification example of the fourth design DS4 of the airflow generation package PG2, the base BSP may be a chamber CHB in order to increase the airflow generated by the airflow generation chip AFC, and may have an empty structure EP connected between the air opening OPP1 and the first cavity CY1. For example, the base BSP may be an integral structure or may be formed of a plurality of sub-structures (for example, a plurality of substrates). In FIG. 7, the empty structure EP (that is, the chamber) is formed on the side of the film structure FS, and the air opening OPP1 is formed on the side wall BSPw of the base BSP.

[0085] That is, the airflow generation package PG2 may have a larger back volume by the chamber CHB. By appropriately designing the size or dimensions of the chamber CHB, Helmholtz resonance (HHR) is formed in the chamber CHB (or in the back volume of the airflow generation package PG2), ultrasonic acoustic characteristics are obtained in the airflow generation package PG2, and it becomes more advantageous in generating airflow.

[0086] In FIG. 8 showing a modification example of the second design DS2 of the airflow generation package PG3, the airflow generation package PG3 has a plurality of airflow generation chips AFC1 and AFC2. The airflow generation chip AFC1 may be connected to the base BSP, and the airflow generation chip AFC2 may be connected to the covering structure CSV. For example, the airflow generation chips AFC1 and AFC2 may overlap in the direction Z (for example, the airflow generation chips AFC1 and AFC2 may be stacked on top of each other). In FIG. 8, the first cavity CY1_1 exists between the base BSP and the airflow generation chip AFC1, the first cavity CY1_2 exists between the covering structure CSV and the airflow generation chip AFC2, and the second cavity CY2 may exist between the two airflow generation chips AFC1 and AFC2.

[0087] As shown in FIG. 8, the package housing PH may have a plurality of air openings OPP1 connected to the first cavities CY1_1 and CY1_2, and at least one air opening OPP2 connected to the second cavity CY2. For example, in the airflow generation package PG3, but not limited thereto, the base BSP has one air opening OPP1 overlapping the airflow generation chip AFC1 and connected to the first cavity CY1_1, and the top CSVt of the covering structure CSV has another air opening OPP1 overlapping the airflow generation chip AFC2 and connected to the first cavity CY1_2. The two side walls CSVw of the covering structure CSV have two air openings OPP2 that are opposite to each other and connected to the second cavity CY2, and the direction of the airflow passing through the air opening OPP1 may be configured to be orthogonal to the direction of the airflow passing through the air opening OPP2.

[0088] In FIG. 8 showing a modification of the second design DS2 of the airflow generation package PG3’, but not limited thereto, compared with the airflow generation package PG3, the side wall CSVw of the covering structure CSV of the airflow generation package PG3’ may have one air opening OPP2.

[0089] In the airflow generation package PG3 (and its modifications) and the airflow generation package PG3’ (and its modifications), the side wall CSVw of the covering structure CSV may be the side wall of the package housing PH, and the top CSVt and the base BSP of the covering structure CSV may be the top and the bottom of the package housing PH, respectively.

[0090] In the airflow generation package PG3 (and its modifications) and the airflow generation package PG3’ (and its modifications), the flip-chip method may be used for the airflow generation chip AFC1 and / or the airflow generation chip AFC. For example, one of the airflow generation chips AFC1 and AFC2 may be arranged in the flip-chip method, but not limited thereto.

[0091] The configuration of FIG. 8 having two or more stacked airflow generation chips and useful for increasing the total air volume of the airflow generated by the airflow generation package is within the scope of the present application.

[0092] In FIG. 9 showing another modification of the second design DS2 of the airflow generation package PG4, the airflow generation package PG4 may have a plurality of package units PU1 and PU2 connected to each other. The package unit PU1 includes at least one airflow generation chip AFC (for example, two airflow generation chips AFC1 and AFC2 in FIG. 9), a base BSP1, and a coating structure CSV1. The package unit PU2 may include at least one airflow generation chip AFC (for example, two airflow generation chips AFC3 and AFC4 in FIG. 9), a base BSP2, and a coating structure CSV2. For example, but not limited to, the bases BSP1 and BSP2 are between the two coating structures CSV1 and CSV2, and the conductive elements in the base BSP1 may be electrically connected to the conductive elements in the base BSP2 via at least one connection structure CM having a conductive material (for example, solder or conductive balls). In FIG. 9, the airflow generation chips AFC1, AFC2, AFC3, and AFC4 may overlap in the direction Z, but are not limited to this.

[0093] As shown in FIG. 9, the package housing PH may have a plurality of air openings OPP1 connected to the first cavities CY1_1, CY1_2, CY1_3, and CY1_4, and a plurality of air openings OPP2 connected to the second cavities CY2_1 and CY2_2. For example, without limitation, one air opening OPP1 exists between the bases BSP1 and BSP2 and is connected to the first cavities CY1_1 and CY1_3 (this air opening OPP1 is formed by thinning the bases BSP1 and BSP2), the covering structure CSV1 overlaps the airflow generation chip AFC2 and has another air opening OPP1 connected to the first cavity CY1_2, the covering structure CSV2 overlaps the airflow generation chip AFC4 and has yet another air opening OPP1 connected to the first cavity CY1_4, the covering structure CSV1 has one air opening OPP2 connected to the second cavity CY2_1, the covering structure CSV2 has another air opening OPP2 connected to the second cavity CY2_2, and the direction of the airflow passing through one of the air openings OPP1 may be configured to be parallel or perpendicular to the direction of the airflow passing through the air opening OPP2. Therefore, in FIG. 9, since the number of the airflow generation chips AFC is increased, the airflow generated by the airflow generation chips AFC increases.

[0094] In FIG. 10, which shows yet another variant of the second design DS2 of the airflow generation package PG5, the airflow generation package PG5 may further include a heat dissipation structure TP connected to the covering structure CSV in order to enhance the heat dissipation effect by the airflow generation package PG5. In some embodiments, the heat dissipation structure TP may be disposed outside the covering structure CSV or inside the covering structure CSV (for example, the heat dissipation structure TP may be disposed outside the covering structure CSV in FIG. 10). For example, in FIG. 10, the heat dissipation structure TP may have, without limitation, a plurality of heat dissipation units dispersed on the covering structure CSV. In some embodiments, the heat dissipation structure TP and / or the heat dissipation units of the heat dissipation structure TP may be notches or protrusions (or projections) of the covering structure CSV (for example, the heat dissipation structure TP and the covering structure CSV may form an integral structure shown in FIG. 28) or the heat dissipation structure TP and / or the heat dissipation units of the heat dissipation structure TP may be adhered to the covering structure CSV (for example, the heat dissipation structure TP and / or the heat dissipation units of the heat dissipation structure TP may be a heat sink, a heat spreader, etc.).

[0095] In the present invention, an airflow generation component (for example, an airflow generation chip AFC, a semiconductor component SC including the airflow generation chip AFC, or an airflow generation package PG including the airflow generation chip AFC) is used in an apparatus DV, and the airflow generated by the airflow generation component (that is, the airflow generation chip AFC) may be configured to dissipate the heat generated by the components within the apparatus DV. Therefore, the heat dissipation of the apparatus DV can be improved by the airflow generated by the airflow generation component. For example, the apparatus DV may be an electronic device (such as a smartphone, a tablet, or other suitable electronic devices). Some embodiments of the apparatus DV including the airflow generation component are shown in FIGS. 11 to 17. The airflow generation components shown in FIGS. 11 to 17 are airflow generation packages PG including the airflow generation chip AFC, but the apparatus DV is not limited to the following embodiments.

[0096] Referring to FIG. 11, FIG. 11 is a schematic cross-sectional view showing an apparatus including a heat source and an airflow generation chip according to a first embodiment of the present invention. In FIG. 11, the airflow generation package PG shown in FIG. 11 may be a modified example belonging to the first design DS1 shown in FIG. 5, and is not limited thereto. The base BSP has one air opening OPP1, and the top CSVt of the covering structure CSV has a plurality of air openings OPP2, and the direction of the airflow passing through the air opening OPP1 may be configured to be parallel to the direction of the airflow passing through the air opening OPP2.

[0097] As shown in FIG. 11, the apparatus 100 includes a heat source (or operating component) 110, and the heat source (operating component) 110 generates heat during operation. The airflow generation package PG in the apparatus 100 is configured to generate an airflow to dissipate the heat generated by the heat source 110. In the present invention, the heat source 110 can be any suitable component that can generate heat during operation. For example, the heat source 110 may be an operating component formed by a semiconductor manufacturing process (i.e., the operating component may be called a heat-generating chip), and the operating component can be, but is not limited to, a chip, a 2.5D integrated circuit, or a 3D integrated circuit. For example, the operating component can be, but is not limited to, an application processor (AP), a central processing unit (CPU), a graphics processing unit (GPU), a tensor processing unit (TPU) that is generally an XPU, or a memory. For example, the normal direction of the upper surface of the heat source 110 can be parallel to the direction Z, but is not limited thereto.

[0098] In the present invention, the reference numeral "110" can be used to indicate a heat source, a heat-generating chip, and an operating component. The terms "heat source", "heat-generating chip", and "operating component" are used interchangeably.

[0099] As shown in FIG. 11, the apparatus 100 may include a heat conduction component 120 that is disposed adjacent to the heat source 110 and configured to conduct heat emitted by the heat source 110. For example, the heat source 110 may be connected to the heat conduction component 120 to enhance the heat dissipation effect (e.g., heat dissipation efficiency). The heat conduction component 120 may be any suitable component for conducting heat. For example, the heat conduction component 120 may include, but is not limited to, a heat sink, a heat spreader, a thermal interface material, an interposer, a heat pipe, a vapor chamber, other suitable components, or combinations thereof (e.g., the heat conduction component 120 shown in FIG. 11 may be a heat spreader).

[0100] As shown in FIG. 11, the airflow generation package PG (i.e., the airflow generation component) may be disposed adjacent to the heat conduction component 120 such that heat emitted by the heat source 110 can be dissipated by the heat conduction component 120 and the airflow generated by the airflow generation package PG. In some embodiments, the airflow generation package PG may be disposed on or above the heat source 110 and / or the heat conduction component 120 such that the membrane structure FS of the airflow generation package PG can generate an airflow for dissipating heat from the heat source 110 and / or the heat conduction component 120. For example, in FIG. 11, the airflow generation package PG may be disposed so as to overlap, but is not limited to, on the heat conduction component 120. For example, in FIG. 11, the membrane structure FS of the airflow generation package PG may face the heat conduction component 120. For example, in FIG. 11, the coating structure CSV of the airflow generation package PG may be disposed, but is not limited to, between the heat conduction component 120 and the membrane structure FS. For example, in FIG. 11, the heat source 110 and the airflow generation package PG may be disposed on the same side of the heat conduction component 120.

[0101] In this embodiment, the heat generated by the heat source 110 is first conducted and dissipated by the heat conduction component 120, and then cold air flows into the device 100 by the airflow generated by the airflow generation package PG, and hot air flows out of the device 100 to dissipate the heat of the heat conduction component 120. In FIG. 11, the airflow generation package PG can be configured to dissipate some of the heat of the heat conduction component 120 that overlaps the airflow generation package PG, although not limited thereto.

[0102] As shown in FIG. 11, the device 100 includes an outer casing 130 in which a heat source 110, a heat conduction component 120, and an airflow generation package PG (i.e., an airflow generation component) are arranged, and the heat conduction component 120 and the airflow generation package PG can be protected by the outer casing 130. In FIG. 11, the outer casing 130 can be the outermost structure of the device 100.

[0103] In this embodiment, in order to enhance the heat dissipation effect of the heat conduction component 120, the heat conduction component 120 can be arranged in a wide range within the outer casing 130. Further, due to the presence of the heat conduction component 120, the design of the positions of the heat source 110 and the airflow generation package PG is flexible. For example, in FIG. 11, although not limited thereto, the heat source 110 and the airflow generation package PG are arranged in different regions within the outer casing 130 and do not overlap in the Z direction (for example, the heat source 110 and the airflow generation package PG can be separated by the spacer 140 in FIG. 11), and the heat generated by the heat source 110 can be dissipated by the airflow generation package PG through the heat conduction component 120. Note that the spacer 140 that separates the airflow generation package PG and the heat source 110 helps to prevent the airflow (direction) from becoming too diverse and enhances the efficiency and effect of heat dissipation. For example, in FIG. 11, the airflow generation package PG is arranged by (or adjacent to) the edge of the device 100, and the heat conduction component 120 can extend from the heat source 110 toward the airflow generation package PG such that the airflow generated by the airflow generation package PG flows through the heat conduction component 120.

[0104] In FIG. 11, the outer casing 130 may include at least one first casing opening 132 associated with the air opening OPP1 and at least one second casing opening 134 associated with the air opening OPP2. The airflow generated by the airflow generation chip AFC in the airflow generation package PG passes through the first casing opening 132 and the second casing opening 134. The airflow flows into the device 100 through the first casing opening 132 or the second casing opening 134 (i.e., one of the first casing opening 132 and the second casing opening 134 can be the airflow inlet of the device), and the airflow flows out of the device 100 through the first casing opening 132 or the second casing opening 134 (i.e., the other of the first casing opening 132 and the second casing opening 134 can be the airflow outlet of the device). The first casing opening 132 and the second casing opening 134 are arranged by the same edge or different edges of the device 100. Since the flow direction of the airflow generated by the airflow generation chip AFC in the airflow generation package PG is reversible, when the airflow is reversed, the airflow inlet of the device and the airflow outlet of the device are reversed.

[0105] In the first flow direction of the airflow in the device 100, the airflow passes through the first casing opening 132, the air opening OPP1, the membrane structure FS of the airflow generation chip AFC, the air opening OPP2, and the second casing opening 134 in sequence. In the second flow direction of the airflow in the device 100, the airflow passes through the second casing opening 134, the air opening OPP2, the membrane structure FS of the airflow generation chip AFC, the air opening OPP1, and the first casing opening 132 in sequence.

[0106] The first casing opening 132 and the second casing opening 134 are designed based on requirements. The number of the first casing openings 132 and the number of the second casing openings 134 are designed based on requirements. The design of the first casing opening 132 and the second casing opening 134 may be related to the airflow path within the apparatus 100. For example, the direction of the airflow passing through the first casing opening 132, although not limited, may be parallel or perpendicular to the direction of the airflow passing through the second casing opening 134 (in FIG. 11, the direction of the airflow passing through the first casing opening 132 may be parallel to the direction of the airflow passing through the second casing opening 134).

[0107] The direction of the airflow passing through the air opening OPP1, the direction of the airflow passing through the air opening OPP2, the direction of the airflow passing through the first casing opening 132, and the direction of the airflow passing through the second casing opening 134 can be designed based on requirements. For example, the direction of the airflow passing through the air opening OPP1 and the direction of the airflow passing through the air opening OPP2, although not limited, may be perpendicular to the direction of the airflow passing through the first casing opening 132 and the direction of the airflow passing through the second casing opening 134.

[0108] Referring to FIG. 12, FIG. 12 is a schematic cross-sectional view showing an apparatus including a heat source and an airflow generation chip according to a second embodiment of the present invention. The airflow generation package PG shown in FIG. 12 may be a modification belonging to the first design DS1 shown in FIG. 5. As shown in FIG. 12, the difference between this embodiment and the embodiment shown in FIG. 11 lies in the type of the heat conduction component 120 of the apparatus 200. In FIG. 12, the heat conduction component 120 may be a heat pipe or a vapor chamber, and a space 122 filled with a liquid and / or a gas exists within the heat conduction component 120.

[0109] As shown in FIG. 12, the difference between this embodiment and the embodiment shown in FIG. 11 is the position of the first casing opening 132. Therefore, the directions of the airflows passing through the air openings OPP1, OPP2, and the first casing opening 132 are not limited, but can be perpendicular to the direction of the airflow passing through the second casing opening 134.

[0110] Referring to FIG. 13, FIG. 13 is a schematic cross-sectional view showing an apparatus including a heat source and an airflow generation chip according to a third embodiment of the present invention. The airflow generation package PG shown in FIG. 13 may belong to the second design DS2 shown in FIG. 5. As shown in FIG. 13, the difference between this embodiment and the embodiment shown in FIG. 11 is the position of the heat source 110 of the apparatus 300. In FIG. 13, the heat source 110, the heat conduction component 120, and the airflow generation package PG (i.e., the airflow generation component) may overlap in the direction Z, and the heat conduction component 120 may be disposed between the heat source 110 and the airflow generation package PG in the direction Z. Further, in FIG. 13, the base BSP of the airflow generation package PG may be disposed between the heat conduction component 120 and the membrane structure FS, although not limited thereto.

[0111] Referring to FIG. 14, FIG. 14 is a schematic cross-sectional view showing an apparatus including a heat source and an airflow generation chip according to a fourth embodiment of the present invention. The airflow generation package PG shown in FIG. 14 may belong to the second design DS2 shown in FIG. 5. As shown in FIG. 14, the difference between this embodiment and the embodiment shown in FIG. 11 is that the heat conduction component 120 is connected to the covering structure CSV of the airflow generation package PG of the apparatus 400 so that the heat of the heat conduction component 120 is directly conducted to the airflow generation package PG. For example, the heat conduction component 120 may be adhered to the covering structure CSV of the airflow generation package PG via a material having a high thermal conductivity (not shown in FIG. 14) such as a thermal interface material (TIM). The thermal interface material (TIM) can be or include thermal grease, thermal gel, thermal pad, phase change material (PCM), phase change metal alloy (PCMA), and thermal conductive adhesive.

[0112] Referring to FIG. 15, FIG. 15 is a schematic cross-sectional view showing an apparatus including a heat source and an airflow generation chip according to a fifth embodiment of the present invention. The airflow generation package PG shown in FIG. 15 may belong to the second design DS2 shown in FIG. 5. As shown in FIG. 15, the difference between this embodiment and the embodiment shown in FIG. 14 lies in the position of the heat source 110 of the apparatus 500. In FIG. 15, the heat source 110, the heat conduction component 120, and the airflow generation package PG (i.e., the airflow generation component) may overlap in the Z direction, and the heat conduction component 120 may be disposed between the heat source 110 and the airflow generation package PG in the Z direction.

[0113] As shown in FIG. 15, the difference between this embodiment and the embodiment shown in FIG. 14 lies in the position of the first casing opening 132 of the apparatus 500. Therefore, although not limited, the directions of the airflow passing through the air opening OPP1, the airflow passing through the air opening OPP2, and the airflow passing through the first casing opening 132 may be perpendicular to the direction of the airflow passing through the second casing opening 134.

[0114] Referring to FIG. 16, FIG. 16 is a schematic cross-sectional view showing an apparatus including a heat source and an airflow generation chip according to a sixth embodiment of the present invention. The airflow generation package PG shown in FIG. 16 may belong to the second design DS2 shown in FIG. 5. As shown in FIG. 16, the difference between this embodiment and the embodiment shown in FIG. 15 is that the airflow generation package PG of the apparatus 600 has a heat dissipation structure TP connected to the covering structure CSV, and the heat dissipation structure TP is disposed inside the covering structure CSV to enhance the heat dissipation effect by the airflow generation package PG. For example, in FIG. 16, the heat dissipation structure TP may have a plurality of heat dissipation units dispersed on the covering structure CSV, although not limited.

[0115] Referring to FIG. 17, FIG. 17 is a schematic cross-sectional view showing an apparatus including a heat source and an airflow generation chip according to a seventh embodiment of the present invention. The airflow generation package PG shown in FIG. 17 may belong to the second design DS2 shown in FIG. 5. As shown in FIG. 17, the difference between this embodiment and the embodiment shown in FIG. 15 is the design of the heat conduction component 120 of the apparatus 700. In FIG. 17, the heat conduction component 120 may completely overlap the airflow generation package PG in the Z direction, and the heat source 110 may be connected to the coating structure CSV of the airflow generation package PG via the heat conduction component 120. For example, the heat conduction component 120 may include, but is not limited to, a heat sink, a heat spreader, a thermal interface material, an interposer, or a combination thereof. Further, in FIG. 17, the heat source 110 may be disposed on the substrate 710 (e.g., a circuit board) such that the heat source 110 is disposed between the substrate 710 and the heat conduction component 120.

[0116] In the following, a miniaturized apparatus DV is provided. For example, the following apparatus DV may be a semiconductor device which is a kind of electronic device. The semiconductor device may be formed by a semiconductor manufacturing process (the semiconductor manufacturing process includes a packaging process), and the size of the semiconductor device may be the same as or similar to the size of the semiconductor package structure. Some embodiments of the apparatus DV which is a semiconductor device are shown in FIGS. 18 to 23, but the apparatus DV is not limited to the following embodiments.

[0117] Referring to FIG. 18, FIG. 18 is a schematic cross-sectional view showing an apparatus including a heat source and an airflow generation chip according to an eighth embodiment of the present invention. The airflow generation component may be an airflow generation package PG including an airflow generation chip AFC (see the above for details of the airflow generation package PG). In the apparatus 800 shown in FIG. 18, the airflow generation package PG including the airflow generation chip AFC is disposed on the heat source 110 and may overlap in the Z direction. Note that the apparatus 800 may be considered a type of semiconductor device in which the airflow generation chip AFC and the operating component (heat source 110) are manufactured via a semiconductor manufacturing process. The operating component (heat source 110) may be or may include an application processor (AP for a mobile device such as a smartphone or a tablet computer), a central processing unit (CPU), a graphics processing unit (GPU), a tensor processing unit (TPU), or a memory that generates heat during operation. The operating component may be considered a type of heat source 110.

[0118] Optionally, the apparatus 800 may include a heat conduction component 120 disposed between the airflow generation package PG and the heat source 110 to enhance the heat dissipation effect. For example, the heat conduction component 120 may include, but is not limited to, a heat sink, a heat spreader, a thermal interface material, an interposer, or a combination thereof. In some embodiments, the heat source 110 may be connected to the airflow generation package PG via the heat conduction component 120 (e.g., the heat source 110, the heat conduction component 120, and the airflow generation package PG (or the airflow generation chip AFC) may overlap in the Z direction). For example, the heat source 110 may be adhered to the airflow generation package PG via the heat conduction component 120, but is not limited thereto.

[0119] In FIG. 18, the device 800 may have at least one first device opening 802 and at least one second device opening 804. Further, an air flow path 806 is formed between the operating component (heat source 110) and the air flow generating chip AFC. The air flow generated by the air flow generating chip AFC of the air flow generating package PG passes through the air flow path 806, the first device opening 802, and the second device opening 804. The air flow flows into the device 800 through the first device opening 802 or the second device opening 804 (i.e., one of the first device opening 802 and the second device opening 804 may be the device air inlet), and the air flow flows out of the device 800 through the first device opening 802 or the second device opening 804 (i.e., the other of the first device opening 802 and the second device opening 804 may be the device air outlet), and can dissipate the heat emitted by the heat source 110 (operating component). Since the flow direction of the air flow generated by the air flow generating chip AFC of the air flow generating package PG is reversible, when the air flow is reversed, the device air inlet and the device air outlet are reversed.

[0120] For example, but not limited to, the first device opening 802 may be the air opening OPP1 of the package housing PH of the air flow generating package PG, and the second device opening 804 may be the air opening OPP2 of the package housing PH of the air flow generating package PG. For example, the first device opening 802 or the second device opening 804 is located between the air flow generating package PG and the heat source 110 and may not belong to the air flow generating package PG, but is not limited thereto.

[0121] An example of an apparatus 800' belonging to the design shown in FIG. 18 is shown in FIG. 19, and the airflow generation package PG shown in FIG. 19 is a variant belonging to the second design DS2 shown in FIG. 5. As shown in FIG. 19, the airflow generation chip AFC may include a plurality of membrane structures FS. For simplicity, in FIG. 19, the anchor structure AR within the airflow generation chip AFC is omitted. Additionally, the base BSP may have a plurality of air openings OPP1 that overlap with the membrane structure FS of the airflow generation chip AFC, the side wall CSVw of the covering structure CSV may have one air opening OPP2, and the direction of the airflow passing through the air opening OPP1 may be configured to be orthogonal to the direction of the airflow passing through the air opening OPP2. In FIG. 19, the first device opening 802 may be the air opening OPP1 of the airflow generation package PG, and the second device opening 804 may be the air opening OPP2 of the airflow generation package PG.

[0122] In FIG. 19, the covering structure CSV of the airflow generation package PG is located between the heat source 110 and the base BSP of the airflow generation package PG, and the heat source 110 may be connected to the covering structure CSV of the airflow generation package PG via a heat conduction component 120 (for example, the heat conduction component 120 may be in direct contact with the heat source 110 and the covering structure CSV).

[0123] Furthermore, the cavity surrounded by the covering structure CSV may form an air flow path 806'. That is, the air flow path 806' is formed between the operating component (heat source 110) and the airflow generation chip AFC. Similarly, the airflow generated by the airflow generation chip AFC flows through the air flow path 806' and the air openings OPP1 and OPP2, and dissipates the heat emitted by the operating component (heat source 110).

[0124] Referring to FIG. 20, FIG. 20 is a schematic cross-sectional view showing an apparatus including a heat source and an airflow generation chip according to a ninth embodiment of the present invention. The apparatus 900 is a semiconductor device that is an airflow generation package or a package. The airflow generation component is the airflow generation chip AFC. In FIG. 20, the apparatus 900, which is an airflow generation package, is similar to the second design DS2 of the airflow generation package PG shown in FIG. 5 (note that the apparatus 900 can be similar to any design and / or any example of the above-described airflow generation package PG). The base BSP has one air opening OPP1 overlapping the film structure FS of the airflow generation chip AFC, and the side wall CSVw of the covering structure CSV has one air opening OPP2.

[0125] The positions of the airflow generation chip AFC and the heat source 110 can be designed based on requirements. The airflow generation chip AFC can be arranged adjacent to the heat source 110 (that is, the airflow generation chip AFC can be above, below, or arranged by the heat source 110). For example, in FIG. 20, without limitation, the airflow generation chip AFC and the heat source 110 can be arranged on both sides of the base BSP, respectively, and the airflow generation chip AFC can be between the base BSP and the covering structure CSV. For example, the airflow generation chip AFC may not overlap the heat source 110 in the direction Z, without limitation.

[0126] Optionally, the device 900 (i.e., the package) may include a fin-type heat conduction component 120' (a type of heat conduction component 120) disposed at any suitable position to enhance the heat dissipation effect. For example, the fin-type heat conduction component 120' may include, but is not limited to, a heat sink. In some embodiments, the fin-type heat conduction component 120' is disposed on the heat source 110 to obtain the heat generated by the heat source 110 (e.g., the fin-type heat conduction component 120' may be connected to or in contact with the heat source 110), and the fin-type heat conduction component 120' may pass through the base BSP so that the heat of the fin-type heat conduction component 120' is dissipated by the airflow generated by the airflow generation chip AFC (e.g., the airflow flows through the fin-type heat conduction component 120' and is configured to dissipate heat from the heat source 110).

[0127] Note that the fin type means increasing the surface area to enhance heat dissipation, and the fin-type heat sink or heat conduction component is for illustrative purposes and is not limited thereto. The fin-type heat conduction component 120' may include any type of heat sink or heat conduction component with a non-smooth surface (e.g., a heat sink or heat conduction component with regular or irregular protrusions).

[0128] Referring to FIG. 21, FIG. 21 is a schematic cross-sectional view showing a device including a heat source and an airflow generation chip according to a tenth embodiment of the present invention. The device 1000 is a semiconductor device that is an airflow generation package or a package, and the airflow generation component is the airflow generation chip AFC. In the device 1000 (i.e., the package) shown in FIG. 21, the device 1000 is similar to the fourth design DS4 of the airflow generation package PG shown in FIG. 5. The side surface of the base BSP has a plurality of air openings OPP1, and the top CSVt of the covering structure CSV has one air opening OPP2.

[0129] Similar to the embodiment shown in FIG. 20, the airflow generation chip AFC and the heat source 110 are respectively arranged on both sides of the base BSP. The airflow generation chip AFC is between the base BSP and the coating structure CSV, and the fin-type heat conduction component 120' is arranged on the heat source 110 and can penetrate the base BSP.

[0130] In FIG. 21, the airflow generation chip AFC, the fin-type heat conduction component 120', and the heat source 110 may overlap in the Z direction, and the fin-type heat conduction component 120' can be arranged between the airflow generation chip AFC and the heat source 110. For example (as shown in FIG. 21), the fin-type heat conduction component 120' can be, but is not limited to, the wall of the hollow structure EP.

[0131] Referring to FIG. 22, FIG. 22 is a schematic cross-sectional view showing an apparatus including a heat source and an airflow generation chip AFC according to the 11th embodiment of the present invention. The apparatus 1100 is a semiconductor device that is an airflow generation package or a package, and the airflow generation component is the airflow generation chip AFC. In the apparatus 1100 (i.e., the package) shown in FIG. 22, the apparatus 1100 may include a plurality of airflow generation chips AFC1 and AFC2 arranged on the base BSP, and the airflow generation chip AFC1 can be arranged by the airflow generation chip AFC2. In FIG. 22, the base BSP may have an air opening OPP1 overlapping the airflow generation chip AFC1 and an air opening OPP2 overlapping the airflow generation chip AFC2, and the direction of the airflow passing through the air opening OPP1 can be configured to be parallel to the direction of the airflow passing through the air opening OPP2. Note that the flow direction of the airflow generated by the airflow generation chip AFC1 is opposite to the flow direction of the airflow generated by the airflow generation chip AFC2.

[0132] Similar to the embodiment shown in FIG. 20, the airflow generation chip AFC and the heat source 110 may be disposed on both sides of the base BSP, respectively. The airflow generation chip AFC may be disposed between the base BSP and the covering structure CSV. The fin-type heat conduction component 120' may be disposed on the heat source 110 and may pass through the base BSP. For example, the airflow generation chip AFC may, but is not limited to, not overlap with the heat source 110 in the direction Z.

[0133] In FIG. 22, the heat source 110 and the fin-type heat conduction component 120' may, but are not limited to, be disposed between the airflow generation chips AFC1 and AFC2 in the horizontal direction (e.g., the direction X). For example, but not limited to, the airflow generation chip AFC1 may be disposed on the first side of the fin-type heat conduction component 120' and configured to form an airflow inward, and the airflow generation chip AFC2 may be disposed on the second side of the fin-type heat conduction component 120' and configured to form an airflow outward.

[0134] Referring to FIG. 23, FIG. 23 is a schematic cross-sectional view showing an apparatus including a heat source and an airflow generation chip according to a twelfth embodiment of the present invention. The apparatus 1200 is a semiconductor device that is an airflow generation package or a package. The airflow generation component is the airflow generation chip AFC. In the apparatus 1200 (i.e., the package) shown in FIG. 23, the apparatus 1200 may include a plurality of airflow generation chips AFC and a plurality of heat sources 110. The airflow generation chips AFC and the heat sources 110 may be disposed between the base BSP and the covering structure CSV. For example, in FIG. 23, the heat sources 110 may overlap in the direction Z (e.g., one heat source 110 may be stacked on another heat source 110 to form a 3D integrated circuit), and the airflow generation chips AFC may overlap in the direction Z (e.g., the airflow generation chip AFC1 may be stacked on the airflow generation chip AFC3, and the airflow generation chip AFC2 may be stacked on the airflow generation chip AFC4). In FIG. 23, the airflow generation chip AFC may, but is not limited to, overlap with the heat source 110 in the direction Z.

[0135] In FIG. 23, the heat source 110 and the fin-type heat conduction component 120' can be arranged between two adjacent airflow generating chips AFC in the horizontal direction (e.g., direction X), although not limited thereto. For example, although not limited, the stacked airflow generating chips AFC1 and AFC3 can be arranged on the first side of the fin-type heat conduction component 120', and the stacked airflow generating chips AFC2 and AFC4 can be arranged on the other side of the fin-type heat conduction component 120'. In FIG. 23, the fin-type heat conduction component 120' can be arranged on the heat source 110, although not limited thereto. In some embodiments, the conductive structure CV (e.g., TSV) connected to the heat source 110 may have a heat conduction effect, and the presence of the conductive structure CV can enhance the heat dissipation effect.

[0136] In some embodiments, the semiconductor device can be a semiconductor component SC including at least one airflow generating chip AFC and at least one heat source 110. For example, the semiconductor component SC2 in FIG. 4 can also be called a semiconductor device, and the chip CP in FIG. 4 can be the heat source 110.

[0137] In particular, the above embodiments are used to illustrate the concept of the present application. Those skilled in the art can make changes and modifications accordingly and are not limited to this specification. For example, FIG. 24 shows a schematic diagram of a (semiconductor) device 1300 according to an embodiment of the present application. Different from the previous embodiments, the semiconductor device 1300 includes a plurality of heat conduction balls CB (e.g., solder balls) and optionally includes a heat conduction component 120. The heat conduction balls CB are arranged between the airflow generating chip AFC and the operating component (heat source 110). Note that the heat conduction balls CB have not only electrical conductivity but also heat conductivity. The heat conduction balls CB can increase the surface area of the component to air and can be used to conduct the heat generated by the operating component (heat source 110). With the help of the airflow generated by the airflow generating chip AFC, the heat generated by the operating component (heat source 110) is effectively dissipated.

[0138] FIG. 25 shows another embodiment of the semiconductor device 1400 of the present application. In the semiconductor device 1400, the airflow generation chip AFC and / or the airflow generation package PG can be arranged by the operating component (heat source 110). The heat generated by the operating component (heat source 110) in (the semiconductor device 1400) can be conducted through the heat conduction component 120 and / or the heat conduction ball CB, and dissipated through the airflow generated by the airflow generation chip AFC and / or the airflow generation package PG. Note that the airflow generation package PG shown in FIG. 25 is, but not limited to, (top fining with an opening formed in the upper part of the coating structure). The airflow generation package PG of (side fining with an opening formed in the side wall of the coating structure) is also within the scope of the present application.

[0139] FIG. 26 shows another embodiment of the semiconductor device 1500 of the present application. The semiconductor device 1500 includes a plurality of airflow generation chips AFC and a plurality of operating components (heat sources 110), and the plurality of airflow generation chips AFC and the plurality of operating components (heat sources 110) are stacked. This means that the plurality of airflow generation chips AFC and the plurality of operating components (heat sources 110) (wholly or partially) overlap in the normal direction of the base BSP (or substrate). Further, the stacked airflow generation chips AFC and the operating components (heat sources 110) such as the semiconductor device 1500 can be applied / arranged by advanced packaging technologies such as 2.5D or 3D semiconductor packages or chip-on-wafer-on-substrate (CoWoS) packages.

[0140] In one embodiment, the airflow generation chip AFC shown in FIG. 26 may be further packaged into an airflow generation package (for example, PG), and the airflow generation package (for example, PG) is stacked with the operating component (heat source 110), which is also within the scope of the present application.

[0141] Figure 27 shows another embodiment of the apparatus 1110 of the present application. The apparatus 1110 includes an airflow generating chip AFC or an airflow generating package PG disposed adjacent to the heat sink 121. In the embodiment shown in Figure 27, the airflow generating chip AFC or the airflow generating package PG is disposed by the heat sink 121 to generate an airflow in order to dissipate the heat carried by the heat sink 121. In one embodiment, the heat sink 121 may be a fin-type heat sink and may be a type of fin-type heat conduction component. Different from the apparatus 1100, the fin-type heat conduction component is disposed outside the airflow generating package PG, which is also within the scope of the present application.

[0142] Figure 28 shows embodiments of two designs DSN1 and DSN2 of the coating structure 1600 of the present application. In one embodiment, the coating structure 1600 may be a metal lid for the airflow generating package of the present application. As shown in Figure 28, the coating structure 1600 includes a plurality of protrusions TPP disposed on the coating structure 1600 either on the outside (e.g., design DSN1) or inside (e.g., design DSN2) of the coating structure 1600. The protrusions TPP of the coating structure 1600 have the same function as the heat dissipation structure TP described above (increasing the surface area and enhancing the heat dissipation performance). The coating structure 1600 can be used to realize the (all types of) coating structure CSV for the airflow generating package of the present application.

[0143] In one embodiment, the protrusions TPP may be disposed on the outside and inside of the coating structure, which is also within the scope of the present application.

[0144] In summary, the heat dissipation performance of the apparatus is improved by the design of the heat conduction component of the present invention.

[0145] Those skilled in the art will readily understand that many changes and modifications can be made to the apparatus and method while maintaining the teachings of the present invention. Therefore, the above disclosure should be construed as being limited only by the appended claims.

Claims

1. An electronic device, comprising: An operating component that generates heat during operation; and A heat conduction component configured to conduct heat generated by the operating component, wherein the operating component is disposed on the heat conduction component; and An airflow generation package disposed by an edge of the electronic device; Wherein the airflow generation package includes a membrane structure, the membrane structure includes a flap pair, and the flap pair includes a first flap and a second flap; The flap pair operates at ultrasonic speed to generate an airflow; The heat conduction component extends toward the airflow generation package such that the airflow generated by the airflow generation package flows through the heat conduction component and dissipates heat emitted from the operating component through the heat conduction component.

2. The operating component and the airflow generation package are disposed on a side portion of the heat conduction component. The electronic device according to claim 1.

3. The operating component, the heat conduction component, and the airflow generation package overlap in an operating direction of the membrane structure. The electronic device according to claim 1.

4. The airflow generation package includes a base and a covering structure, the membrane structure is disposed between the base and the covering structure, and the covering structure is disposed between the heat conduction component and the membrane structure. The electronic device according to claim 1.

5. The heat conduction component is adhered to a covering structure of the airflow generation package. The electronic device according to claim 4.

6. The airflow generation package includes a covering structure and a heat dissipation structure, and the heat dissipation structure is distributed across the covering structure. The electronic device according to claim 1.

7. Further including an outer casing, The operating component, the heat conduction component, and the airflow generation package are disposed within the outer casing, The outer casing includes a first casing opening and a second casing opening, and the airflow generated by the airflow generation package passes through the first casing opening and the second casing opening. The electronic device according to claim 1.

8. ​ The airflow generation package generates an airflow through the first casing opening and the second casing opening, and the electronic device according to claim 7.

9. The electronic device according to claim 1, wherein the heat conduction component includes a heat sink or a heat spreader.

10. The electronic device according to claim 1, wherein the heat conduction component includes a thermal interface material.

11. The electronic device according to claim 1, wherein the heat conduction component includes an interposer.

12. The electronic device according to claim 1, wherein the heat conduction component includes a heat pipe or a vapor chamber.

13. The electronic device according to claim 1, wherein the flow direction of the airflow generated by the airflow generation package is reversible.

14. The electronic device according to claim 1, wherein the airflow generation package and the operation component are separated by a spacer.

15. The electronic device according to claim 1, wherein the airflow generation package includes a semiconductor chip manufactured through a semiconductor manufacturing process, and the semiconductor chip is a microelectromechanical system (MEMS) chip.

16. The electronic device according to claim 1, wherein the operation component includes an application processor (AP), a central processing unit (CPU), a graphics processing unit (GPU), a tensor processing unit (TPU), or a memory.

17. An airflow generation package, the airflow generation package includes a base, a film structure disposed on the base and operating at ultrasonic speed so that the airflow generation package generates an airflow, and includes an air flow path is formed in the base, and the airflow flows through the air flow path, The flow direction of the airflow in the air flow path is perpendicular to the normal direction of the film structure. The airflow generation package.

18. The airflow generation package according to claim 17, wherein the airflow generation package is disposed on or above a heat source or a heat conduction component, and the airflow generated by the film structure is for dissipating heat from the heat source or the heat conduction component.

19. The airflow generation package according to claim 17, wherein the film structure includes a flap pair, and the flap pair includes a first flap and a second flap.

20. An airflow generation package, the airflow generation package includes a membrane structure that operates at ultrasonic speed so that the airflow generation package generates an airflow, a covering structure on which a plurality of protrusions are arranged to enhance heat dissipation when the airflow generated by the membrane structure flows therethrough, an airflow generation package including the same.

21. The airflow generation package according to claim 20, wherein an air opening is formed in a side wall of the covering structure.

22. The airflow generation package according to claim 20, wherein the membrane structure includes a flap pair, and the flap pair includes a first flap and a second flap.

23. An airflow generation package, comprising: a housing; a membrane structure disposed within the housing and operating at ultrasonic speed so that the airflow generation package generates an airflow; a chamber formed at a side portion of the membrane structure; and including an airflow generation package, wherein an air opening is formed in a side wall of the housing.

24. The housing includes a base, the base includes the chamber, The airflow generation package according to claim 23, wherein the air opening is formed in a side wall of the base.

25. The airflow generation package according to claim 24, wherein Helmholtz resonance (HHR) is formed within the chamber.

26. including a first airflow generation chip and a second airflow generation chip, The airflow generation package according to claim 23, wherein the first airflow generation chip and the second airflow generation chip are stacked.

27. The airflow generation package according to claim 26, wherein one of the first airflow generation chip and the second airflow generation chip is arranged in a flip-chip manner.

28. The airflow generation package according to claim 23, wherein a first air opening is formed in a first side wall of the housing.

29. The airflow generation package according to claim 28, wherein a second air opening is formed in a second side wall of the housing.

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