Electronic device

Abstract

To provide a novel touch panel excellent in convenience or reliability, a novel information processing apparatus excellent in convenience or reliability, and also a novel touch panel, a novel information processing apparatus, or a novel semiconductor apparatus.SOLUTION: A touch panel comprises: a sensing element C(g,h) comprising a first conductive film C1(g) and a second conductive film C2(h); and a display element comprising a third conductive film arranged such that an electric field can be applied between the first conductive film C1(g) and the third conductive film, wherein the electric field controls a layer containing a liquid crystal material and the orientation of the liquid crystal material contained in the layer containing the liquid crystal material.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] One aspect of the present invention relates to a touch panel, an information processing apparatus, or a semiconductor device.

[0002] Note that one aspect of the present invention is not limited to the above technical field. The technical field of one aspect disclosed in this specification or the like relates to an article, a method, or a manufacturing method. Or, one aspect of the present invention relates to a process, a machine, a manufacture, or a composition (composition of matter). Therefore, more specifically, examples of the technical field of one aspect of the present invention disclosed in this specification include a semiconductor device, a display device, a light-emitting device, a power storage device, a storage device, their driving methods, or their manufacturing methods.

Background Art

[0003] As an example of an optical touch panel, an imaging panel including a plurality of display pixels capable of displaying information and a photoelectric conversion element extending therebetween is known (Patent Document 1).

[0004] In addition to the optical type, a display device (or display module) equipped with a touch sensor as a position input means has been put into practical use. A display device (or display module) equipped with a touch sensor may be called a touch panel, a touch screen, or the like (hereinafter, this may also be simply referred to as a "touch panel"). Note that a member having no display device and consisting only of a touch sensor may also be called a touch panel. Or, a display device equipped with a touch sensor is also called a display device with a touch sensor. ) In some cases, it is also simply referred to as a "touch panel"). Note that a member having no display device and consisting only of a touch sensor may also be called a touch panel. Or, a display device equipped with a touch sensor is also called a display device with a touch sensor. ​​​It may also be called a touch panel with a display device or a display module, etc. Also when a touch sensor is incorporated inside the display device, it is an in-cell type touch sensor (or a display device with an in-cell type touch sensor), or an on-cell type touch sensor (also a display device with an on-cell type touch sensor) etc. may also be called. The in-cell type touch sensor uses, for example, the electrodes used in liquid crystal elements as electrodes for the touch sensor as well as. On the other hand, the on-cell type touch sensor has, for example, electrodes for the touch sensor formed on the upper side of the counter substrate (the side where the display element is not provided). For example , as mobile information terminals equipped with these touch panels etc., there are smartphones, tablet terminals etc. (Patent Documents 2 and 3).

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

Patent Document 2

Patent Document 3

Summary of the Invention

Problems to be Solved by the Invention

[0006] One aspect of the present invention aims to provide a novel touch panel excellent in convenience or reliability. Or, one of the problems is to provide a novel information processing device excellent in convenience or reliability. Or, a novel touch panel, a novel information processing device, a novel display device ​​One of the problems is to provide a novel light-emitting device or a novel semiconductor device.

[0007] Note that the description of these problems does not prevent the existence of other problems. One aspect of the present invention does not necessarily have to solve all of these problems. Note that other problems will become apparent from the description in the specification, drawings, claims, etc., and it is possible to extract these other problems from the description in the specification, drawings, claims, etc.

Means for Solving the Problems

[0008] (1) One aspect of the present invention is a touch panel having a base material, a display element, and a detection element. The base material has translucency, the display element has a region overlapping with the base material, and the detection element is disposed between the display element and the base material.

[0009] In addition, the display element has a function of displaying on the side where the base material is located, and the detection element has a function of detecting an object that is in close proximity to or in contact with the side where the base material is located.

[0010] In addition, the detection element includes a first conductive film, a second conductive film between the first conductive film and the base material, and an insulating film between the first conductive film and the second conductive film.

[0011] (2) Also, one aspect of the present invention is a touch panel in which the above-described display element includes a layer containing a liquid crystal material and a third conductive film. The third conductive film is disposed so as to be able to apply an electric field for controlling the alignment of the liquid crystal material contained in the layer containing the liquid crystal material between the first conductive film.

[0012] The touch panel according to one aspect of the present invention described above includes a detection element including a first conductive film and a second conductive film. A child, a layer containing a liquid crystal material, and an electric field for controlling the alignment of the liquid crystal material contained in the layer containing the liquid crystal material are provided with a third conductive film arranged so as to be able to be applied between the first conductive film. A display element including a third conductive film is configured to include a display element. As a result, the conductive film included in the detection element can be used for the display element. As a result, a novel touch panel excellent in convenience or reliability can be provided.

[0013] (3) Further, one aspect of the present invention is the above touch panel having a transistor. And the third conductive film is electrically connected to the source electrode or the drain electrode of the transistor. (3) Also, one aspect of the present invention is the above touch panel having a transistor. And the third conductive film is electrically connected to the source electrode or the drain electrode of the transistor. The third conductive film is electrically connected to the source electrode or the drain electrode of the transistor.

[0014] (4) Also, one aspect of the present invention is a touch panel in which the transistor includes a semiconductor film, and the insulating film includes a region sandwiched between a layer containing a liquid crystal material and the semiconductor film. The insulating film includes a region sandwiched between a layer containing a liquid crystal material and the semiconductor film.

[0015] (5) Also, one aspect of the present invention is the above touch panel having a scanning line and a signal line. The scanning line is electrically connected to the gate electrode of the transistor, and the signal line is electrically connected to the source electrode or the drain electrode of the transistor. The scanning line is electrically connected to the gate electrode of the transistor, and the signal line is electrically connected to the source electrode or the drain electrode of the transistor.

[0016] Also, it has a plurality of transistors electrically connected to the scanning line and a plurality of transistors electrically connected to the signal line. The first conductive film or the second conductive film includes an opening overlapping the scanning line or the signal line. The first conductive film or the second conductive film includes an opening overlapping the scanning line or the signal line.

[0017] The touch panel according to one aspect of the present invention has a scanning line electrically connected to a transistor and a signal line electrically connected to the transistor, and an opening overlapping the scanning line or the signal line. The touch panel according to one aspect of the present invention has a scanning line electrically connected to a transistor and a signal line electrically connected to the transistor, and an opening overlapping the scanning line or the signal line. It is configured to include a first conductive film or a second conductive film having the same. Thereby, the area of the region where the scanning line or the signal line of the first conductive film or the second conductive film overlaps is reduced, and the capacitance parasitic on the scanning line or the signal line can be reduced. As a result, a novel touch panel excellent in convenience or reliability can be provided. The area of the region where the scanning line or the signal line of the film overlaps is reduced, and the capacitance parasitic on the scanning line or the signal line can be reduced. As a result, a novel touch panel excellent in convenience or reliability can be provided.

[0018] (6) Further, one aspect of the present invention is the touch panel described above, in which the semiconductor film of the transistor contains indium, gallium, zinc, and oxygen.

[0019] (7) Further, one aspect of the present invention is the touch panel described above, in which the second conductive film of the detection element contains indium, gallium, zinc, and oxygen.

[0020] The touch panel according to one aspect of the present invention includes a transistor having a semiconductor film containing indium, gallium, zinc, and oxygen, and a detection element having a second conductive film containing indium, gallium, zinc, and oxygen. Thereby, a film containing indium, gallium, zinc, and oxygen can be formed in the same process. Further, the film containing indium, gallium, zinc, and oxygen formed in the same process can be used for the semiconductor film or the second conductive film. As a result, a novel touch panel excellent in convenience or reliability can be provided. The touch panel according to one aspect of the present invention includes a transistor having a semiconductor film containing indium, gallium, zinc, and oxygen, and a detection element having a second conductive film containing indium, gallium, zinc, and oxygen. Thereby, a film containing indium, gallium, zinc, and oxygen can be formed in the same process. Further, the film containing indium, gallium, zinc, and oxygen formed in the same process can be used for the semiconductor film or the second conductive film. As a result, a novel touch panel excellent in convenience or reliability can be provided. Thereby, a film containing indium, gallium, zinc, and oxygen can be formed in the same process. Further, the film containing indium, gallium, zinc, and oxygen formed in the same process can be used for the semiconductor film or the second conductive film. As a result, a novel touch panel excellent in convenience or reliability can be provided. Thereby, a film containing indium, gallium, zinc, and oxygen can be formed in the same process. Further, the film containing indium, gallium, zinc, and oxygen formed in the same process can be used for the semiconductor film or the second conductive film. As a result, a novel touch panel excellent in convenience or reliability can be provided. The film containing indium, gallium, zinc, and oxygen formed in the same process can be used for the semiconductor film or the second conductive film. As a result, a novel touch panel excellent in convenience or reliability can be provided. As a result, a novel touch panel excellent in convenience or reliability can be provided.

[0021] (8) Further, one aspect of the present invention is an information processing device having an arithmetic unit and the touch panel described above. The arithmetic unit has a function of supplying position information, image information, and control information, and the touch panel has a function of supplying position information and a function of being supplied with image information and control information. The arithmetic unit has a function of supplying position information, image information, and control information, and the touch panel has a function of supplying position information and a function of being supplied with image information and control information. The arithmetic unit has a function of supplying position information, image information, and control information, and the touch panel has a function of supplying position information and a function of being supplied with image information and control information. ​​​​​

[0022] Further, the touch panel includes a display unit that displays image information and an input unit that supplies position information. The input unit has a function of detecting the position of the pointer and supplying position information determined based on the position. to provide.

[0023] Further, the arithmetic unit has a function of determining the moving speed of the pointer based on the position information. The arithmetic unit has a function of determining the contrast or brightness of the image information based on the moving speed of the pointer. to provide.

[0024] The information processing apparatus according to one aspect of the present invention includes a touch panel that supplies position information and is supplied with image information, and an arithmetic unit that is supplied with position information and supplies image information. The arithmetic unit determines the contrast or brightness of the image information based on the moving speed of the pointer. Thereby, when moving the display position of the image information, the burden on the user's eyes can be reduced, and a display that is easy on the user's eyes can be provided. As a result, a novel information processing apparatus excellent in convenience or reliability can be provided. In the drawings attached to this specification, the components are classified according to function and shown as independent blocks. However, it is difficult to completely separate the actual components according to function, and one component may be related to multiple functions.

[0025] In this specification, the source and drain of a transistor are interchanged depending on the polarity of the transistor and the level of the potential applied to each terminal. Generally, in an n-channel type transistor, the terminal to which a low potential is applied is called the source, and the terminal to which a high potential is applied is called the drain.

[0026] In this specification, the source and drain of a transistor are interchanged depending on the polarity of the transistor and the level of the potential applied to each terminal. Generally, in an n-channel type transistor, the terminal to which a low potential is applied is called the source, and the terminal to which a high potential is applied is called the drain. The terminal to which a low potential is applied is called the drain in an n-channel transistor. In a p-channel transistor, the terminal to which a low potential is applied is called the drain, and the terminal to which a high potential is applied is called the source. In this specification, for the sake of convenience, when explaining the connection relationship of transistors, it is assumed that the source and the drain are fixed, but in reality, the naming of the source and the drain is interchanged according to the above potential relationship. In this specification, for the sake of convenience, when explaining the connection relationship of transistors, it is assumed that the source and the drain are fixed, but in reality, the naming of the source and the drain is interchanged according to the above potential relationship. In this specification, for the sake of convenience, when explaining the connection relationship of transistors, it is assumed that the source and the drain are fixed, but in reality, the naming of the source and the drain is interchanged according to the above potential relationship. In this specification, for the sake of convenience, when explaining the connection relationship of transistors, it is assumed that the source and the drain are fixed, but in reality, the naming of the source and the drain is interchanged according to the above potential relationship. In this specification, for the sake of convenience, when explaining the connection relationship of transistors, it is assumed that the source and the drain are fixed, but in reality, the naming of the source and the drain is interchanged according to the above potential relationship.

[0027] In this specification, the source of a transistor means a source region that is a part of a semiconductor film functioning as an active layer, or a source electrode connected to the semiconductor film. Similarly, the drain of a transistor means a drain region that is a part of the semiconductor film, or a drain electrode connected to the semiconductor film. Also, the gate means a gate electrode. In this specification, the source of a transistor means a source region that is a part of a semiconductor film functioning as an active layer, or a source electrode connected to the semiconductor film. Similarly, the drain of a transistor means a drain region that is a part of the semiconductor film, or a drain electrode connected to the semiconductor film. Also, the gate means a gate electrode. In this specification, the source of a transistor means a source region that is a part of a semiconductor film functioning as an active layer, or a source electrode connected to the semiconductor film. Similarly, the drain of a transistor means a drain region that is a part of the semiconductor film, or a drain electrode connected to the semiconductor film. Also, the gate means a gate electrode. In this specification, the source of a transistor means a source region that is a part of a semiconductor film functioning as an active layer, or a source electrode connected to the semiconductor film. Similarly, the drain of a transistor means a drain region that is a part of the semiconductor film, or a drain electrode connected to the semiconductor film. Also, the gate means a gate electrode.

[0028] In this specification, the state in which transistors are connected in series means, for example, a state in which only one of the source or drain of the first transistor is connected to only one of the source or drain of the second transistor. Also, the state in which transistors are connected in parallel means a state in which one of the source or drain of the first transistor is connected to one of the source or drain of the second transistor, and the other of the source or drain of the first transistor is connected to the other of the source or drain of the second transistor. In this specification, the state in which transistors are connected in series means, for example, a state in which only one of the source or drain of the first transistor is connected to only one of the source or drain of the second transistor. Also, the state in which transistors are connected in parallel means a state in which one of the source or drain of the first transistor is connected to one of the source or drain of the second transistor, and the other of the source or drain of the first transistor is connected to the other of the source or drain of the second transistor. In this specification, the state in which transistors are connected in series means, for example, a state in which only one of the source or drain of the first transistor is connected to only one of the source or drain of the second transistor. Also, the state in which transistors are connected in parallel means a state in which one of the source or drain of the first transistor is connected to one of the source or drain of the second transistor, and the other of the source or drain of the first transistor is connected to the other of the source or drain of the second transistor. In this specification, the state in which transistors are connected in series means, for example, a state in which only one of the source or drain of the first transistor is connected to only one of the source or drain of the second transistor. Also, the state in which transistors are connected in parallel means a state in which one of the source or drain of the first transistor is connected to one of the source or drain of the second transistor, and the other of the source or drain of the first transistor is connected to the other of the source or drain of the second transistor. In this specification, the state in which transistors are connected in series means, for example, a state in which only one of the source or drain of the first transistor is connected to only one of the source or drain of the second transistor. Also, the state in which transistors are connected in parallel means a state in which one of the source or drain of the first transistor is connected to one of the source or drain of the second transistor, and the other of the source or drain of the first transistor is connected to the other of the source or drain of the second transistor. In this specification, the state in which transistors are connected in series means, for example, a state in which only one of the source or drain of the first transistor is connected to only one of the source or drain of the second transistor. Also, the state in which transistors are connected in parallel means a state in which one of the source or drain of the first transistor is connected to one of the source or drain of the second transistor, and the other of the source or drain of the first transistor is connected to the other of the source or drain of the second transistor. In this specification, the state in which transistors are connected in series means, for example, a state in which only one of the source or drain of the first transistor is connected to only one of the source or drain of the second transistor. Also, the state in which transistors are connected in parallel means a state in which one of the source or drain of the first transistor is connected to one of the source or drain of the second transistor, and the other of the source or drain of the first transistor is connected to the other of the source or drain of the second transistor.

[0029] In this specification, "connection" means electrical connection, corresponding to a state where current, voltage, or potential can be supplied or transmitted. Therefore, the connected state means a directly connected state. In this specification, "connection" means electrical connection, corresponding to a state where current, voltage, or potential can be supplied or transmitted. Therefore, the connected state means a directly connected state. It does not necessarily mean the state, but rather that current, voltage, or potential is connected indirectly via circuit elements such as wiring, resistors, diodes, transistors, etc. so that it can be supplied or transmitted. This also includes the state of being indirectly connected. In this specification, even when components that are independent on the circuit diagram are connected, in reality, for example, when a part of the wiring functions as an electrode, one conductive film may have the functions of multiple components. In this specification, connection includes such a case where one conductive film has the functions of multiple components.

[0030] Also, in this specification, when one of the first electrode or the second electrode of a transistor refers to the source electrode and the other refers to the drain electrode.

Advantages of the Invention

[0031]

[0031] According to one aspect of the present invention, a novel touch panel excellent in convenience or reliability can be provided. Or, a novel information processing device excellent in convenience or reliability can be provided. Or, a novel touch panel, a novel information processing device, or a novel semiconductor device can be provided. Note that the description of these effects does not prevent the existence of other effects. Note that one aspect of the present invention does not necessarily have all of these effects. Note that other effects will be obvious from the description in the specification, drawings, claims, etc., and it is possible to extract these other effects from the description in the specification, drawings, claims, etc.

Brief Description of the Drawings

[0032]

[0033]

[0034] ​​​​​​​​

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Embodiments for Carrying Out the Invention

[0035] A touch panel according to one aspect of the present invention includes a detection element including a first conductive film and a second conductive film, and a display element including a layer containing a liquid crystal material and a third conductive film arranged so as to be able to apply an electric field for controlling the alignment of the liquid crystal material contained in the layer containing the liquid crystal material between the first conductive film. The detection element includes a conductive film provided in the display element. As a result, a novel touch panel excellent in convenience or reliability can be provided.

[0036] Thereby, the conductive film included in the detection element can be used for the display element. As a result, a novel touch panel excellent in convenience or reliability can be provided.

[0037] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and those skilled in the art can easily understand that the form and details can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention is not construed as being limited to the description of the embodiments shown below. In the configuration of the invention described below, the same reference numerals are commonly used between different drawings for the same part or parts having the same function, and the repeated description thereof will be omitted. In the configuration of the invention described below, the same reference numerals are commonly used between different drawings for the same part or parts having the same function, and the repeated description thereof will be omitted.

[0038] (Embodiment 1) ​​​​​​In the present embodiment, the configuration of the touch panel according to an aspect of the present invention will be described with reference to FIGS. 1 to 5. In this specification, variables taking values of one or more integers may be used as symbols. For example, (p) including a variable p taking a value of one or more integers may be used as part of a symbol for specifying any one of up to p constituent elements. Further, for example, (m, n) including variables m and n taking values of one or more integers may be used as part of a symbol for specifying any one of up to m×n constituent elements. While explaining, variables taking values of one or more integers may be used as symbols. For example, (p) including a variable p taking a value of one or more integers may be used as part of a symbol for specifying any one of up to p constituent elements. Further, for example, (m, n) including variables m and n taking values of one or more integers may be used as part of a symbol for specifying any one of up to m×n constituent elements. When taking values of one or more integers, variables may be used as symbols. For example, (p) including a variable p taking a value of one or more integers may be used as part of a symbol for specifying any one of up to p constituent elements. Further, for example, (m, n) including variables m and n taking values of one or more integers may be used as part of a symbol for specifying any one of up to m×n constituent elements. When taking values of one or more integers, variables may be used as symbols. For example, (p) including a variable p taking a value of one or more integers may be used as part of a symbol for specifying any one of up to p constituent elements. Further, for example, (m, n) including variables m and n taking values of one or more integers may be used as part of a symbol for specifying any one of up to m×n constituent elements. When taking values of one or more integers, variables may be used as symbols. For example, (p) including a variable p taking a value of one or more integers may be used as part of a symbol for specifying any one of up to p constituent elements. Further, for example, (m, n) including variables m and n taking values of one or more integers may be used as part of a symbol for specifying any one of up to m×n constituent elements. When taking values of one or more integers, variables may be used as symbols. For example, (p) including a variable p taking a value of one or more integers may be used as part of a symbol for specifying any one of up to p constituent elements. Further, for example, (m, n) including variables m and n taking values of one or more integers may be used as part of a symbol for specifying any one of up to m×n constituent elements.

[0039] FIG. 1 is a diagram for explaining the configuration of a touch panel 700 according to an aspect of the present invention. FIG. 1(A) is a block diagram for explaining the configuration of a touch panel 700 according to an aspect of the present invention, and FIG. 1(B) is a schematic diagram for explaining the arrangement of the detection element C(g, h) shown in FIG. 1(A) and the pixel 702(i, j) overlapping with the detection element C(g, h). FIG. 1 is a diagram for explaining the configuration of a touch panel 700 according to an aspect of the present invention. FIG. 1(A) is a block diagram for explaining the configuration of a touch panel 700 according to an aspect of the present invention, and FIG. 1(B) is a schematic diagram for explaining the arrangement of the detection element C(g, h) shown in FIG. 1(A) and the pixel 702(i, j) overlapping with the detection element C(g, h). FIG. 1 is a diagram for explaining the configuration of a touch panel 700 according to an aspect of the present invention. FIG. 1(A) is a block diagram for explaining the configuration of a touch panel 700 according to an aspect of the present invention, and FIG. 1(B) is a schematic diagram for explaining the arrangement of the detection element C(g, h) shown in FIG. 1(A) and the pixel 702(i, j) overlapping with the detection element C(g, h). FIG. 1 is a diagram for explaining the configuration of a touch panel 700 according to an aspect of the present invention. FIG. 1(A) is a block diagram for explaining the configuration of a touch panel 700 according to an aspect of the present invention, and FIG. 1(B) is a schematic diagram for explaining the arrangement of the detection element C(g, h) shown in FIG. 1(A) and the pixel 702(i, j) overlapping with the detection element C(g, h).

[0040] FIG. 2 is a diagram for explaining the configuration of the detection element C(g, h) of the touch panel 700 according to an aspect of the present invention shown in FIG. 1. FIG. 2(A) is a top view of the detection element C(g, h) according to an aspect of the present invention, and FIG. 2(B) is a cross-sectional view of the detection element C(g, h) and the pixel 702(i, j) along the cutting line W1 - W2 shown in FIG. 2(A). FIG. 2 is a diagram for explaining the configuration of the detection element C(g, h) of the touch panel 700 according to an aspect of the present invention shown in FIG. 1. FIG. 2(A) is a top view of the detection element C(g, h) according to an aspect of the present invention, and FIG. 2(B) is a cross-sectional view of the detection element C(g, h) and the pixel 702(i, j) along the cutting line W1 - W2 shown in FIG. 2(A). FIG. 2 is a diagram for explaining the configuration of the detection element C(g, h) of the touch panel 700 according to an aspect of the present invention shown in FIG. 1. FIG. 2(A) is a top view of the detection element C(g, h) according to an aspect of the present invention, and FIG. 2(B) is a cross-sectional view of the detection element C(g, h) and the pixel 702(i, j) along the cutting line W1 - W2 shown in FIG. 2(A). FIG. 2 is a diagram for explaining the configuration of the detection element C(g, h) of the touch panel 700 according to an aspect of the present invention shown in FIG. 1. FIG. 2(A) is a top view of the detection element C(g, h) according to an aspect of the present invention, and FIG. 2(B) is a cross-sectional view of the detection element C(g, h) and the pixel 702(i, j) along the cutting line W1 - W2 shown in FIG. 2(A).

[0041] FIG. 3 is a diagram for explaining the configuration of the detection element C(g, h) of the touch panel 700 according to an aspect of the present invention. FIG. 3(A) is a top view of the second conductive film C2(h) of the detection element C(g, h), FIG. 3(B) is a top view of the first conductive film C1(g) of the detection element C(g, h), and FIG. 3(C) is a top view of the third conductive film 751 of the touch panel 700 according to an aspect of the present invention. FIG. 3 is a diagram for explaining the configuration of the detection element C(g, h) of the touch panel 700 according to an aspect of the present invention. FIG. 3(A) is a top view of the second conductive film C2(h) of the detection element C(g, h), FIG. 3(B) is a top view of the first conductive film C1(g) of the detection element C(g, h), and FIG. 3(C) is a top view of the third conductive film 751 of the touch panel 700 according to an aspect of the present invention. FIG. 3 is a diagram for explaining the configuration of the detection element C(g, h) of the touch panel 700 according to an aspect of the present invention. FIG. 3(A) is a top view of the second conductive film C2(h) of the detection element C(g, h), FIG. 3(B) is a top view of the first conductive film C1(g) of the detection element C(g, h), and FIG. 3(C) is a top view of the third conductive film 751 of the touch panel 700 according to an aspect of the present invention. FIG. 3 is a diagram for explaining the configuration of the detection element C(g, h) of the touch panel 700 according to an aspect of the present invention. FIG. 3(A) is a top view of the second conductive film C2(h) of the detection element C(g, h), FIG. 3(B) is a top view of the first conductive film C1(g) of the detection element C(g, h), and FIG. 3(C) is a top view of the third conductive film 751 of the touch panel 700 according to an aspect of the present invention.

[0042] FIG. 4 is a diagram for explaining the configuration of the touch panel 700 according to an aspect of the present invention. FIG. 4(A) is a bottom view of the touch panel 700 according to an aspect of the present invention, and FIG. 4(B) is a bottom view of the pixel 702(i,j) of the touch panel 700 according to an aspect of the present invention. FIG. 4(A) is a bottom view of the touch panel 700 according to an aspect of the present invention, and FIG. 4(B) is a bottom view of the pixel 702(i,j) of the touch panel 700 according to an aspect of the present invention. FIG. 4(A) is a bottom view of the touch panel 700 according to an aspect of the present invention, and FIG. 4(B) is a bottom view of the pixel 702(i,j) of the touch panel 700 according to an aspect of the present invention.

[0043] FIG. 5 is a diagram for explaining the configuration of the touch panel 700 according to an aspect of the present invention. FIG. 5(A) is a cross-sectional view of the touch panel 700 according to an aspect of the present invention taken along the cutting lines X1-X2, X3-X4, and X5-X6 shown in FIG. 4(A). Further, FIG. 5(B) is a cross-sectional view for explaining the details of the transistor MD shown in FIG. 5(A), FIG. 5(C) is a cross-sectional view for explaining the details of the transistor MA shown in FIG. 5(A), and FIG. 5(D) is a cross-sectional view for explaining a modification example of a part of the configuration shown in FIG. 5(A). FIG. 5(A) is a cross-sectional view of the touch panel 700 according to an aspect of the present invention taken along the cutting lines X1-X2, X3-X4, and X5-X6 shown in FIG. 4(A). Further, FIG. 5(B) is a cross-sectional view for explaining the details of the transistor MD shown in FIG. 5(A), FIG. 5(C) is a cross-sectional view for explaining the details of the transistor MA shown in FIG. 5(A), and FIG. 5(D) is a cross-sectional view for explaining a modification example of a part of the configuration shown in FIG. 5(A). FIG. 5(A) is a cross-sectional view of the touch panel 700 according to an aspect of the present invention taken along the cutting lines X1-X2, X3-X4, and X5-X6 shown in FIG. 4(A). Further, FIG. 5(B) is a cross-sectional view for explaining the details of the transistor MD shown in FIG. 5(A), FIG. 5(C) is a cross-sectional view for explaining the details of the transistor MA shown in FIG. 5(A), and FIG. 5(D) is a cross-sectional view for explaining a modification example of a part of the configuration shown in FIG. 5(A). FIG. 5(A) is a cross-sectional view of the touch panel 700 according to an aspect of the present invention taken along the cutting lines X1-X2, X3-X4, and X5-X6 shown in FIG. 4(A). Further, FIG. 5(B) is a cross-sectional view for explaining the details of the transistor MD shown in FIG. 5(A), FIG. 5(C) is a cross-sectional view for explaining the details of the transistor MA shown in FIG. 5(A), and FIG. 5(D) is a cross-sectional view for explaining a modification example of a part of the configuration shown in FIG. 5(A). FIG. 5(A) is a cross-sectional view of the touch panel 700 according to an aspect of the present invention taken along the cutting lines X1-X2, X3-X4, and X5-X6 shown in FIG. 4(A). Further, FIG. 5(B) is a cross-sectional view for explaining the details of the transistor MD shown in FIG. 5(A), FIG. 5(C) is a cross-sectional view for explaining the details of the transistor MA shown in FIG. 5(A), and FIG. 5(D) is a cross-sectional view for explaining a modification example of a part of the configuration shown in FIG. 5(A). FIG. 5(A) is a cross-sectional view of the touch panel 700 according to an aspect of the present invention taken along the cutting lines X1-X2, X3-X4, and X5-X6 shown in FIG. 4(A). Further, FIG. 5(B) is a cross-sectional view for explaining the details of the transistor MD shown in FIG. 5(A), FIG. 5(C) is a cross-sectional view for explaining the details of the transistor MA shown in FIG. 5(A), and FIG. 5(D) is a cross-sectional view for explaining a modification example of a part of the configuration shown in FIG. 5(A).

[0044] <Configuration Example of Touch Panel 700> The touch panel 700 described in the present embodiment includes a base material 710, pixels 702(i,j), a display element 750, and a detection element C(g,h) (see FIG. 5). The touch panel 700 described in the present embodiment includes a base material 710, pixels 702(i,j), a display element 750, and a detection element C(g,h) (see FIG. 5).

[0045] The base material 710 has translucency, the display element 750 has a region overlapping the base material 710, and the detection element C(g,h) is disposed between the display element 750 and the base material 710. The base material 710 has translucency, the display element 750 has a region overlapping the base material 710, and the detection element C(g,h) is disposed between the display element 750 and the base material 710.

[0046] The pixel 702(i,j) includes a display element 750.

[0047] The display element 750 has a function of displaying on the side where the base material 710 is located. For example, a backlight can be arranged on the side of the base material 770 so as to emit light from the base material 770 toward the base material 710, and display can be performed (see FIG. 2(B)). The display element 750 has a function of displaying on the side where the base material 710 is located. For example, a backlight can be arranged on the side of the base material 770 so as to emit light from the base material 770 toward the base material 710, and display can be performed (see FIG. 2(B)). The display element 750 has a function of displaying on the side where the base material 710 is located. For example, a backlight can be arranged on the side of the base material 770 so as to emit light from the base material 770 toward the base material 710, and display can be performed (see FIG. 2(B)).

[0048] The detection element C(g,h) has a function of detecting an object that is close to or in contact with the side where the base material 710 is located. It includes this (refer to Fig. 2(B)).

[0049] The detection element C(g,h) includes a first conductive film C1(g), a second conductive film C2(h) between the first conductive film C1(g) and the base material 710, and an insulating film 721B between the first conductive film C1(g) and the second conductive film C2(h). It includes this (refer to Fig. 2(B)). It includes this (refer to Fig. 2(B)).

[0050] Also, the display element 750 of the touch panel 700 includes a layer 753 containing a liquid crystal material, and a third conductive film 751 arranged so that an electric field for controlling the alignment of the liquid crystal material contained in the layer 753 containing the liquid crystal material can be applied between the third conductive film 751 and the first conductive film C1(g). It includes this (refer to Fig. 2(B)). It includes this (refer to Fig. 2(B)).

[0051] The touch panel 700 described in this embodiment includes a detection element C(g,h) having a first conductive film C1(g) and a second conductive film C2(h), and a display element 750 having a layer 753 containing a liquid crystal material and a third conductive film 751 arranged so that an electric field for controlling the alignment of the liquid crystal material contained in the layer 753 containing the liquid crystal material can be applied between the third conductive film 751 and the first conductive film C1(g). It includes this (refer to Fig. 2(B)). It includes this (refer to Fig. 2(B)). It includes this (refer to Fig. 2(B)). Thus, the conductive film included in the detection element can be used for the display element. As a result, a novel touch panel excellent in convenience or reliability can be provided. It includes this (refer to Fig. 2(B)). It includes this (refer to Fig. 2(B)).

[0052] Also, the touch panel 700 has a transistor MA that is electrically connected to the display element 750. And the third conductive film 751 is electrically connected to the source electrode or drain electrode of the transistor MA. It includes this (refer to Fig. 2(B)). It includes this (refer to Fig. 2(B)).

[0053] Further, the transistor MA of the touch panel 700 includes a semiconductor film 718. And the insu lation film 721B includes a region sandwiched between the layer 753 containing a liquid crystal material and the semiconductor film 718 (see Fig. 5(C)).

[0054] Also, the touch panel 700 has a scanning line G(i) electrically connected to the transistor MA, a signal line S(j) electrically connected to the transistor MA, a plurality of transistors electrically connected to the scanning line G(i), and a plurality of transistors electrically connected to the signal line S(j) (see Fig. 2(A)). Specifically, the conductive film 704 functioning as the gate electrode of the transistor MA is electrically connected to the scanning line G(i), and the conductive film 712B functioning as the source electrode or the drain electrode is electrically connected to the signal line S(j) (see Fig. 5(C)).

[0055] The first conductive film C1(g) or the second conductive film C2(h) has an opening overlapping the scanning line G(i) or the signal line S(j) (see Fig. 3(A) or Fig. 3(B)).

[0056] The touch panel 700 described in this embodiment includes a scanning line G(i) electrically connected to the transistor MA, a signal line S(j) electrically connected to the transistor, and a first conductive film C1(g) or a second conductive film C2(h) having an opening overlapping the scanning line S(j) or the signal line G(i). Thereby, the area of the region where the scanning line or the signal line of the first conductive film or the second conductive film overlaps can be reduced, and the capacitance parasitic on the scanning line or the signal line can be reduced. As a result, a novel touch panel excellent in convenience or reliability can be provided. ​​​​​​​​​​​​​​

[0057] Further, the semiconductor film 718 of the touch panel 700 contains indium, gallium, zinc, and oxygen. It contains.

[0058] Further, the second conductive film C2(h) of the touch panel 700 contains indium, gallium, zinc, and oxygen.

[0059] The touch panel 700 described in this embodiment includes a transistor MA having a semiconductor film 718 containing indium, gallium, zinc, and oxygen, and a detection element C(g,h) having a second conductive film C2(h) containing indium, gallium, zinc, and oxygen. It is configured to include. As a result, a film containing indium, gallium, zinc, and oxygen can be formed in the same process. Further, a film containing indium, gallium, zinc, and oxygen formed in the same process can be used as a semiconductor film or a second conductive film. As a result, a novel touch panel excellent in convenience or reliability can be provided. Thereby, a film containing indium, gallium, zinc, and oxygen can be formed in the same process. In addition, a film containing indium, gallium, zinc, and oxygen formed in the same process can be used as a semiconductor film or a second conductive film. As a result, a novel touch panel excellent in convenience or reliability can be provided. element can be used. As a result, a novel touch panel excellent in convenience or reliability can be provided. In addition to the above configuration, the touch panel 700 can have a driving circuit GD or a driving circuit SD (see FIG. 1(A)).

[0060] In addition to the above configuration, the touch panel 700 can have a driving circuit GD or a driving circuit SD. (See FIG. 1(A)).

[0061] The driving circuit GD is electrically connected to the scanning line G(i) and has a function of supplying, for example, a selection signal. The driving circuit SD is electrically connected to the signal line S(j) and has a function of supplying, for example, an image signal. In addition, for example, a transistor MD can be used for the driving circuit GD. A semiconductor film that can be formed in the same process as the transistor MA can be used for the transistor MD. (See FIG. 5).

[0062] Further, the touch panel 700 can have an oscillation circuit OSC or a detection circuit DC (see Fig. 1(A)).

[0063] The oscillation circuit OSC is electrically connected to the first conductive film C1(g) and has a function of supplying a driving signal including, for example, a rectangular wave or the like Further, the detection circuit DC is electrically connected to the second conductive film C2(h) and has a function of detecting the potential of the second conductive film C2(h) that changes based on, for example, the magnitude of the driving signal and the electric field blocked by an object approaching the input / output panel and supplying a detection signal (see Fig. 1(A)). Further, the touch panel 700 can have p first conductive films (see Fig. 1(A)). Further, it can have q second conductive films. Note that p and q are integers of 1 or more, g is an integer of 1 or more and p or less, and h is an integer of 1 or more and q or less

[0064] Further, the touch panel 700 can have p first conductive films (see Fig. 1(A)). Further, it can have q second conductive films. Note that p and q are integers of 1 or more, g is an integer of 1 or more and p or less, and h is an integer of 1 or more and q or less Further, the touch panel 700 can have p first conductive films (see Fig. 1(A)). Further, it can have q second conductive films. Note that p and q are integers of 1 or more, g is an integer of 1 or more and p or less, and h is an integer of 1 or more and q or less Further, the touch panel 700 can have p first conductive films (see Fig. 1(A)). Further, it can have q second conductive films. Note that p and q are integers of 1 or more, g is an integer of 1 or more and p or less, and h is an integer of 1 or more and q or less

[0065] Further, the touch panel 700 can have detection elements arranged in a matrix of p rows and q columns. Note that the detection element C(g, h) includes the first conductive film C1(g) in the g-th row and the second conductive film C2(h) in the h-th column (see Fig. 1(A)).

[0066] Further, the touch panel 700 can have m scanning lines. Further, it can have n signal lines. Note that m and n are integers of 1 or more, i is an integer of 1 or more and m or less, and j is an integer of 1 or more and n or less Further, the touch panel 700 can have m scanning lines. Further, it can have n signal lines. Note that m and n are integers of 1 or more, i is an integer of 1 or more and m or less, and j is an integer of 1 or more and n or less Further, the touch panel 700 can have m scanning lines. Further, it can have n signal lines. Note that m and n are integers of 1 or more, i is an integer of 1 or more and m or less, and j is an integer of 1 or more and n or less

[0067] Further, the touch panel 700 can have display elements arranged in a matrix of m rows and n columns. Note that the pixel 702(i, j) includes a display element 750. Further, the pixel 702(i, j) includes Further, the touch panel 700 can have display elements arranged in a matrix of m rows and n columns. Note that the pixel 702(i, j) includes a display element 750. Further, the pixel 702(i, j) includes It is electrically connected to the scanning line G(i) in the i-th row and electrically connected to the signal line S(j) in the j-th column. It can be.

[0068] Further, the touch panel 700 can have one or more pixels including a region overlapping the detection element. For example, it can have a pixel 702(i,j) overlapping the detection element C(g,h) and other pixels (see FIGS. 1(B) and 2(B)). See FIGS. 1(B) and 2(B).

[0069] Further, the touch panel 700 can have a plurality of scanning lines arranged along the first conductive film C1(g). For example, it can have a scanning line G(i - 1) and a scanning line G(i) arranged along the first conductive film C1(g) (see FIG. 2(A)). Note that another conductive film may be electrically connected to the first conductive film C1(g). For example, it can be connected to the conductive film 704S (see FIG. 5(D)). Thereby, the electrical resistance can be reduced. For example, the first conductive film C1(g) may be connected to the conductive film 704S (see FIG. 5(D)). Thereby, the electrical resistance can be reduced. Thereby, the electrical resistance can be reduced. Thereby, the electrical resistance can be reduced.

[0070] Further, the touch panel 700 can have a plurality of signal lines arranged along the second conductive film. For example, it can have signal lines S(j) to S(j + 9) arranged along the second conductive film C2(h) (see FIG. 2(A)). For example, it can have signal lines S(j) to S(j + 9) arranged along the second conductive film C2(h) (see FIG. 2(A)).

[0071] Further, the touch panel 700 can have a first conductive film C1(g) having an opening. For example, a conductive film having an opening overlapping the scanning line G(i - 1) and an opening overlapping the scanning line G(i) can be used as the first conductive film C1(g) (see FIG. 3(B)). For example, a conductive film having an opening overlapping the scanning line G(i - 1) and an opening overlapping the scanning line G(i) can be used as the first conductive film C1(g) (see FIG. 3(B)).

[0072] Further, the touch panel 700 can have a second conductive film having an opening. For example, For example, a conductive film having an opening overlapping the signal line S(j) through an opening overlapping the signal line S(j+9) The film can be used for the second conductive film C2(h) (see FIG. 3(A)).

[0073] In addition, the touch panel 700 has a liquid crystal layer 753 that is oriented in a direction intersecting the thickness direction of the layer 753 containing a liquid crystal material. The third conductive film 751 is disposed so as to apply an electric field (also called a lateral electric field). For example, a comb-shaped third conductive film having an area overlapping the first conductive film C1(g) can be formed. 751 can be used (see Figs. 2(A), 2(B), 3(B) and 3(C)). Alternatively, an electric field (also called a vertical electric field) is applied in the thickness direction of the layer 753 containing the liquid crystal material. A third conductive film 751 disposed so as to add a second conductive film can be used.

[0074] Hereinafter, each element constituting the touch panel according to one embodiment of the present invention will be described. These components cannot be clearly separated, and one component may be part of another or may be part of another. May include:

[0075] For example, the first conductive film C1(g) is a part of the sensing element C(g,h) and also serves as a display element. It is also part of Child 750.

[0076] The touch panel 700 includes a base material 770 having an area overlapping the base material 710, and a 0 and a sealing material 730 having a function of bonding the substrate 770 to each other. As a result, for example, the area surrounded by the base material 710, the base material 770, and the sealing material 730 is A display element 750 may be provided.

[0077] The touch panel 700 also has a structure KB between the base material 710 and the base material 770. It is possible to provide a predetermined interval between the base material 710 and the base material 770. It can be done.

[0078] Further, the touch panel 700 can have a colored film CF including a region overlapping with the display element 750. Further, it can have a light-shielding film BM including an opening in a region overlapping with the display element 750. It can be done.

[0079] Further, the touch panel 700 can have an insulating film 7 71 between the colored film CF and the layer 753 containing the liquid crystal material. Further, an insulating film 771 can be provided between the light-shielding film BM and the layer 753 containing the liquid crystal material. This can flatten the unevenness caused by the thickness of the colored film CF, or suppress the diffusion of impurities from the colored film CF or the light-shielding film BM to the layer 753 containing the liquid crystal material. or It can suppress the diffusion of impurities.

[0080] Further, the touch panel 700 can have an alignment film AF1 between the layer 753 containing the liquid crystal material and the base material 710. Further, an alignment film AF2 can be provided between the layer 753 containing the liquid crystal material and the base material 770. It can be done.

[0081] Further, the touch panel 700 can have an optical film 710P or an optical film 770P. For example, the optical film 710P can be disposed so as to sandwich the base material 710 between the layer 753 containing the liquid crystal material. Or, the optical film 770P can be disposed so as to sandwich the base material 770 between the layer 753 containing the liquid crystal material. For example, a polarizing plate can be used for the optical film 710P and the optical film 770P. Using the polarizing plate, the other polarization direction is set to a predetermined direction with respect to one polarization direction.

[0082] For example, a polarizing plate can be used for the optical film 710P and the optical film 770P. Using the polarizing plate, the other polarization direction is set to a predetermined direction with respect to one polarization direction.​​ Specifically, two linear polarizing plates are arranged in a crossed Nicol relationship. It can be used.

[0083] The touch panel 700 also includes an area that overlaps with the semiconductor film 718 of the transistor MD. For example, the conductive film 724 may be formed in the same process as the first conductive film C1(g). The conductive film 724 can be formed using a material that can be formed using a conductive film (see FIG. 5B).

[0084] The touch panel 700 also includes an insulating film 701 between the transistor MA and the substrate 710. In addition, an insulating film may be provided between the layer 753 containing a liquid crystal material and the semiconductor film 718. 721B or an insulating film 728. Also, the insulating film 721B and the semiconductor Between the films 718 there may be an insulating film 721A.

[0085] For example, the insulating film 701 has a function of suppressing the diffusion of impurities from the substrate 710 to the transistor MA. The insulating film 721B or the insulating film 721A has a function of preventing diffusion of impurities into the semiconductor film 718. It has a suppression function.

[0086] For example, the insulating film 728 may have a step due to the structure of the transistor MA or the like overlapping with the insulating film 728. It has the function of flattening the difference.

[0087] In addition, the touch panel 700 has an insulating film 706 between the conductive film 704 and the semiconductor film 718. For example, the insulating film 706 can function as a gate insulating film.

[0088] The touch panel 700 is electrically connected to the display element 750 or the sensing element C(g, h). 7. The wiring 711 may be connected to the

[0089] Further, the touch panel 700 can have a terminal 719 that is electrically connected to the wiring 711. For example, a flexible printed circuit board FPC can be electrically connected to the terminal 719 using a conductive member ACF.

[0090] 《Configuration》 The touch panel 700 has a base material 710, a display element 750, or a detection element C(g,h).

[0091] Further, the touch panel 700 includes a first conductive film C1(g), a second conductive film C2(h), an insulating film 721B, a layer 753 containing a liquid crystal material, or a third conductive film 751.

[0092] Further, the touch panel 700 includes a transistor MA, a semiconductor film 718, a scanning line G(i), or a signal line S(j).

[0093] Further, the touch panel 700 can have an oscillation circuit OSC, a detection circuit DC, a drive circuit GD, or a drive circuit SD.

[0094] 《Base Material 710》 A material having light transmissivity can be used for the base material 710.

[0095] A material having heat resistance sufficient to withstand heat treatment during the manufacturing process can be used for the base material 710.

[0096] For example, a glass substrate with a large area such as the 6th generation (1500 mm × 1850 mm), 7th generation (1870 mm × 2200 mm), 8th generation (2200 mm × 2400 mm), 9th generation (2400 mm × 2800 mm), 10th generation (2950 mm × 3400 mm), etc. can be used as the base material 710. Thereby, a large-sized display device can be manufactured.​​​​​​​​

[0097] It is possible to use an organic material, an inorganic material, or a composite material such as a composite of an organic material and an inorganic material for the base material 710. For example, it is possible to use an inorganic material such as glass, ceramics, or metal for the base material 710. It is possible.

[0098] Specifically, it is possible to use non-alkali glass, soda-lime glass, potash glass, crystal glass, quartz, or sapphire, etc. for the base material 710. Specifically, a material containing an inorganic oxide film, an inorganic nitride film, or an inorganic oxynitride film, etc. can be used for the base material 710. For example, a material containing silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, etc. can be used for the base material 710. Stainless steel or aluminum, etc. can be used for the base material 710. For example, a single crystal semiconductor substrate made of silicon or silicon carbide, a polycrystalline semiconductor substrate, a compound semiconductor substrate such as silicon germanium, an SOI substrate, etc. can be used for the base material 710. This enables a semiconductor element to be formed on the base material 710. can be used for the base material 710.

[0099] For example, it is possible to use an organic material such as resin, resin film, or plastic for the base material 710. Specifically, it is possible to use a resin film or resin plate such as polyester, polyolefin, polyamide, polyimide, polycarbonate, or acrylic resin for the base material 710. It is possible.

[0100] For example, it is possible to use a composite material in which a metal plate, a thin glass plate, or a film of an inorganic material, etc. is bonded to a resin film, etc. for the base material 710. For example, fibrous or particulate metal, glass etc. can be used for the base material 710. It is possible.

[0101] For example, it is possible to use a composite material in which a film of a metal plate, a thin glass plate, or an inorganic material, etc. is laminated on a resin film, etc. for the base material 710. For example, fibrous or particulate metal, glass etc. A composite material in which glass or an inorganic material or the like is dispersed in a resin film can be used for the base material 710. For example, a composite material in which fibrous or particulate resin or organic material or the like is dispersed in an inorganic material can be used for the base material 710.

[0102] Also, a single-layer material or a material in which a plurality of layers are laminated can be used for the base material 710. For example, a material in which an insulating film or the like that prevents diffusion of impurities contained in the base material is laminated can be used for the base material 710. Specifically, a material in which one or a plurality of films selected from a silicon oxide layer, a silicon nitride layer, or a silicon oxynitride layer or the like that prevents diffusion of impurities contained in glass and glass is laminated can be used for the base material 710. Or, a material in which a silicon oxide film, a silicon nitride film, or a silicon oxynitride film or the like that prevents diffusion of impurities that permeate through the resin can be used for the base material 710.

[0103] Specifically, a resin film such as polyester, polyolefin, polyamide, polyimide, polycarbonate or acrylic resin, a resin plate, or a laminate or the like can be used for the base material 710.

[0104] Specifically, a material containing a resin having a siloxane bond such as polyester, polyolefin, polyamide (nylon, aramid, etc.), polyimide, polycarbonate or acrylic resin, urethane resin, epoxy resin or silicone can be used for the base material 710. Or, a film, plate or laminate or the like containing one or a plurality of resins selected from these can be used for the base material 710.

[0105] Specifically, polyethylene terephthalate (PET), polyethylene naphthalate (PE N), polyethersulfone (PES), acrylic, etc. can be used for the base material 710. It is possible.

[0106] In addition, a method of directly forming a transistor, a capacitive element, etc. on the base material 710 can be used. Also, for example, a transistor or a capacitive element, etc. is formed on a substrate for the process having heat resistance against the heat applied during the manufacturing process, and the formed transistor or capacitive element, etc. is transferred to the base material 710. A method can be used.

[0107] 《Base material 770》 A material selected from the materials that can be used for the base material 710 can be used for the base material 770. It is possible.

[0108] 《Conductive film 704, conductive film 712A, conductive film 712B, wiring 711, terminal 719》 A material having conductivity can be used for the conductive film 704, the conductive film 712A, the conductive film 712B, the wiring 711, or the terminal 719.

[0109] For example, an inorganic conductive material, an organic conductive material, a metal, or a conductive ceramic, etc. can be used for the conductive film 704, the conductive film 712A, the conductive film 712B, the wiring 711, or the terminal 719. It is possible.

[0110] Specifically, a metal element selected from aluminum, gold, platinum, silver, copper, chromium, tantalum, titanium, molybdenum , tungsten, nickel, iron, cobalt, palladium, or manganese, etc. can be used for the conductive film 704, the conductive film 712A, the conductive film 712B, the wiring 711, or the terminal 7 19. Or, an alloy containing the above-mentioned metal elements, etc. can be used for the conductive film 704 , can be used for the conductive film 712A, the conductive film 712B, the wiring 711, or the terminal 719 . In particular, an alloy of copper and manganese is suitable for microfabrication using a wet etching method.

[0111] Specifically, a two-layer structure in which a titanium film is laminated on an aluminum film, a titanium film is laminated on a titanium nitride film, a two-layer structure in which a tungsten film is laminated on a titanium nitride film, a two-layer structure in which a tungsten film is laminated on a tantalum nitride film or a tungsten nitride film, a titanium film, and an aluminum film is laminated on the titanium film, and a titanium film is further formed thereon, a three-layer structure such as this can be used for the conductive film 704, the conductive film 712A, the conductive film 712B, the wiring 711, or the terminal 719. etc. can be used for the conductive film 704, the conductive film 712A, the conductive film 712B, the wiring 711, or the terminal 719.

[0112] Specifically, conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide added with gallium, etc. can be used for the conductive film 704, the conductive film 712A, the conductive film 712B, the wiring 711, or the terminal 719.

[0113] Specifically, a film containing graphene or graphite can be used for the conductive film 704, the conductive film 712A, the conductive film 712B, the wiring 711, or the terminal 719.

[0114] For example, a film containing graphene oxide is formed, and by reducing the film containing graphene oxide, a film containing graphene can be formed. Examples of the reduction method include heating methods and methods using reducing agents.

[0115] Specifically, conductive polymers can be used for the conductive film 704, the conductive film 712A, the conductive film 712B, the wiring 71 1, or the terminal 719.

[0116] "Scanning Line G(i), Signal Line S(j)" A material having conductivity can be used for the scanning line G(i) or the signal line S(j). For example the material that can be used for the wiring 711 can be used for the scanning line G(i) or the signal line S(j). It can be used.

[0117] "Detection Element C(g,h)" The detection element C(g,h) has a function of detecting the magnitude of an electric field, capacitance, illuminance, magnetic force, radio wave, pressure, etc., and supplying a signal based on the detected physical quantity.

[0118] For example, a capacitive element, a photoelectric conversion element, a magnetic detection element, a piezoelectric element, a resonator, etc. can be used for the detection element C (g,h).

[0119] For example, a detection element having a function of supplying a signal that changes based on a change in the magnitude of an electric field blocked by an object close to the input / output panel can be used for the detection element C(g,h). Specifically the mutual capacitance method or the self-capacitance method can be used.

[0120] For example, a capacitive element including a first conductive film C1(g) and a second conductive film C2(h) can be used for the detection element C (g,h).

[0121] When an object such as a finger having a dielectric constant larger than that of the atmosphere approaches the second conductive film C2(h) in the atmosphere, the magnitude of the electric field blocked by the finger changes. Based on this change in the magnitude of the electric field a signal can be supplied.

[0122] Specifically, a driving signal is supplied to the first conductive film C1(g), and the potential of the second conductive film C2(h) that changes based on the driving signal and the capacitance is detected and used for the detection signal. ​​​​ It is possible.

[0123] 《First conductive film C1(g)》 A material having conductivity can be used for the first conductive film C1(g). For example, for the wiring 71 The material that can be used for 1 can be used for the first conductive film C1(g).

[0124] Specifically, a material having conductivity and translucency can be used for the first conductive film C1(g). It is possible. For example, conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide lead, and zinc oxide added with gallium can be used. Thereby a uniform electric field can be supplied without blocking the display of the display element 750.

[0125] 《Second conductive film C2(h)》 A material having conductivity can be used for the second conductive film C2(h). For example, conductivity and a material having translucency can be used for the second conductive film C2(h). Specifically, a conductive oxide or an oxide semiconductor can be used. For example, indium, gallium a material containing zinc and oxygen can be used.

[0126] For example, an oxide semiconductor whose conductivity is enhanced by using a method for controlling the resistivity of the oxide semiconductor, formed in the same process as the semiconductor film 718, can be used for the second conductive film C2(h). Thereby, the second conductive film C2(h) can be manufactured using a simple process. It is possible.

[0127] Note that, at the end of this embodiment, the method for controlling the resistivity of the oxide semiconductor will be described in detail.

[0128] "Insulating Films 701, 706, 721A, 721B, 728, and 771" "Insulating Film 771" For example, an insulating inorganic material, an insulating organic material, or an insulating composite material containing an inorganic material and an organic material can be used for insulating film 701, insulating film 706, insulating film 721A, insulating film 721B, insulating film 7 28, or insulating film 771. "

[0129] Specifically, an inorganic oxide film, an inorganic nitride film, an inorganic oxynitride film, or a laminated material formed by laminating a plurality of these can be used for insulating film 701, insulating film 706, insulating film 721A, insulating film 721B, insulating film 728, or insulating film 771. For example, a silicon oxide film , a silicon nitride film, an oxynitride film, or a laminated material formed by laminating a plurality of these can be used. "

[0130] Specifically, a polyester, a polyolefin, a polyamide, a polyimide, a polycarbonate , a polysiloxane, an acrylic resin, or the like, or a laminated material or a composite material formed by laminating a plurality of resins selected from these can be used for insulating film 721A, insulating film 721B, insulating film 728, insulating film 771. Further, a photosensitive material may be used for formation. "

[0131] For example, a polyimide, an epoxy resin, an acrylic resin, or the like can be used for insulating film 771. "

[0132] For example, an insulating film containing hydrogen can be used for insulating film 721B. Specifically, a material that can be used in a method for controlling the resistivity of an oxide semiconductor by providing it in contact with the oxide semiconductor can be used for insulating film 721B. "

[0133] For example, it is provided in contact with an oxide semiconductor formed in the same process as the semiconductor film 718. As a result, a material for diffusing hydrogen can be used for the insulating film 721B.

[0134] Note that, at the end of this embodiment, a method for controlling the resistivity of the oxide semiconductor will be described in detail.

[0135] 《Display element 750》 For example, a display element having a function of controlling light reflection or transmission can be used for the display element 750. For example, a configuration in which a liquid crystal element and a polarizing plate are combined or a shutter-type MEMS display element or the like can be used.

[0136] Specifically, a liquid crystal element that can be driven using driving methods such as the IPS (In-Plane-Switching) mode, TN (Twisted Nematic) mode, FFS (Fringe Field Switching) mode, ASM (Axially Symmetric aligned Micro-cell) mode, OCB (Optically Compensated Birefringence) mode, FLC (Ferroelectric Liquid Crystal) mode, AFLC (AntiFerroelectric Liquid id Crystal) mode can be used. refringence) mode, FLC (Ferroelectric Liquid Crystal) mode, AFLC (AntiFerroelectric Liqu id Crystal) mode, etc. can be used for the display element 750. Also, for example, a liquid crystal element that can be driven using driving methods such as the vertical alignment (VA) mode, specifically, the MVA (Multi-Domain Vertical Alignment) mode, PVA (Patterned Ve

[0137] rtical Alignment) mode, ASV mode, etc. can be used for the display element 750. Vertical Alignment) mode, PVA (Patterned Ve rtical Alignment) mode, ASV mode, etc. can be used to drive the display element 750.

[0138] For example, a layer 753 containing a liquid crystal material, arranged so that an electric field can be applied to control the alignment of the liquid crystal material. The first conductive film C1(g) and the third conductive film 751 disposed on the display element 750 are used. This can be done.

[0139] Layer 753 containing liquid crystal material For example, thermotropic liquid crystal, low molecular weight liquid crystal, polymer liquid crystal, polymer dispersed liquid crystal, ferroelectric Liquid crystal, antiferroelectric liquid crystal, etc. can be used. These liquid crystal materials can be used in the form of a colloidal liquid crystal, depending on the conditions. The phases shown are steric, smectic, cubic, chiral nematic, and isotropic. Alternatively, a liquid crystal material exhibiting a blue phase can be used. It can be used for layer 753.

[0140] Third conductive film 751 The third conductive film 751 can be formed using a conductive material.

[0141] For example, a material that can be used for the wiring 711 can be used for the third conductive film 751. Specifically, a light-transmitting material can be used for the third conductive film 751. For example, the third conductive film 751 can have a comb-like shape.

[0142] "Transistor MA" For example, a bottom gate type or a top gate type transistor is used as the transistor MA. There can be.

[0143] For example, compared to a transistor that uses amorphous silicon as the semiconductor film, A transistor with a small leakage current in the OFF state can be used for the transistor MA. That is, a transistor using an oxide semiconductor for the semiconductor film 718 can be used as the transistor M A.

[0144] As a result, the time during which the pixel circuit can hold the image signal can be made longer compared to a pixel circuit using a transistor with an amorphous silicon semiconductor film . Specifically, while suppressing the occurrence of flicker, the selection signal can be supplied at a frequency of less than 30 Hz, preferably less than 1 Hz, more preferably less than once per minute. As a result, the fatigue accumulated by the user of the information processing device can be reduced. Also, the power consumption associated with driving can be reduced.

[0145] The transistor MA includes a semiconductor film 718 and a conductive film 704 in a region overlapping the semiconductor film 718 (see FIG. 5(B)). The transistor MA also includes a conductive film 712A and a conductive film 712B.

[0146] Note that the conductive film 704 functions as a gate electrode, and the insulating film 706 functions as a gate insulating film . The conductive film 712A has one of the functions of a source electrode or a drain electrode , and the conductive film 712B has the other of the functions of a source electrode or a drain electrode.

[0147] 《Semiconductor film 718》 For example, a semiconductor containing a Group 4 element can be used for the semiconductor film 718. Specifically, a semiconductor containing silicon can be used for the semiconductor film 718. For example, single crystal silicon , polysilicon, microcrystalline silicon, or amorphous silicon can be used for the semiconductor film 718 .

[0148] For example, an oxide semiconductor can be used for the semiconductor film 718. Specifically, an oxide semiconductor containing indium or an oxide semiconductor containing indium, gallium, and zinc can be used for the semiconductor film.

[0149] For example, a compound semiconductor can be used for the semiconductor film 718. Specifically, a semiconductor containing gallium arsenide can be used for the semiconductor film 718.

[0150] For example, an organic semiconductor can be used for the semiconductor film 718. Specifically, an organic semiconductor containing polyacenes or graphene can be used for the semiconductor film 718.

[0151] 《Drive Circuit GD》 Various sequential circuits such as a shift register can be used for the drive circuit GD. For example , a transistor MD, a capacitive element, etc. can be used for the drive circuit GD.

[0152] For example, a transistor having a semiconductor film formed in the same process as the semiconductor film 718 included in the transistor MA can be used.

[0153] Specifically, a transistor having the same configuration as the transistor MA can be used for the transistor MD. Or, a transistor having a configuration different from that of the transistor MA can be used for the transistor MD.

[0154] Specifically, a transistor having a conductive film 724 in a region overlapping with the conductive film 704 having the function of the first gate electrode can be used for the transistor MD.

[0155] The transistor MD has a stacked film in which the insulating film 721A and the insulating film 721B are stacked as a conductive film​ It is provided between 724 and the semiconductor film 718.

[0156] For example, the conductive film 724 is electrically connected to a wiring that supplies the same potential as the potential supplied to the conductive film 704. to connect.

[0157] 《Drive circuit SD》 For example, an integrated circuit can be used as the drive circuit SD. Specifically, an integrated circuit formed on a silicon substrate can be used. It can be used.

[0158] For example, the drive circuit SD can be mounted using the COG (Chip on glass) method. Specifically, it can be mounted on a pad electrically connected to the signal line S(j) using an anisotropic conductive film. It can be done.

[0159] 《Oscillation circuit OSC》 The oscillation circuit OSC has functions such as supplying one or more signals to one or more first conductive films selected from the first conductive films C1(1) to C1(p) (see FIG. 1(A)). (See FIG. 1(A)). (See FIG. 1(A)).

[0160] 《Detection circuit DC》 The detection circuit DC has functions such as separating and amplifying one or more signals received by one or more second conductive films selected from the second conductive films C2(1) to C2(q). It has functions such as separating and amplifying one or more signals received by one or more second conductive films selected from the second conductive films C2(1) to C2(q). It is provided with.

[0161] 《Sealing material 730》 For example, an inorganic material, an organic material, or a composite material of an inorganic material and an organic material can be used as the sealing material 730. It can be used.

[0162] For example, an organic material such as a heat - fusible resin or a curable resin can be used as the sealing material 730. It can be used.

[0163] For example, organic materials such as reaction-curing adhesives, photo-curing adhesives, thermosetting adhesives, and / or anaerobic adhesives can be used as the encapsulant 730.

[0164] Specifically, adhesives containing epoxy resins, acrylic resins, silicone resins, phenolic resins, polyimide resins, imide resins, PVC (polyvinyl chloride) resins, PVB (polyvinyl butyral) resins, EVA (ethylene vinyl acetate) resins, etc. can be used as the encapsulant 730.

[0165] 《Colored film CF》 Materials that transmit light of a predetermined color can be used for the colored film CF. Thereby, for example, the colored film CF can be used as a color filter.

[0166] For example, materials that transmit blue light, materials that transmit green light, materials that transmit red light, materials that transmit yellow light, or materials that transmit white light, etc. can be used for the colored film CF.

[0167] 《Light-shielding film BM》 Materials that prevent light transmission can be used for the light-shielding film BM. Thereby, for example, the light-shielding film BM can be used as a black matrix.

[0168] 《Structural body KB》 For example, organic materials, inorganic materials, or composite materials of organic and inorganic materials can be used for the structural body KB. Thereby, a predetermined interval can be provided between the components sandwiching the structural body KB.

[0169] Specifically, polyester, polyolefin, polyamide, polyimide, polycarbonate ​​​​​​​​​​For example, silicone, polyacrylic resin, or a composite material of a plurality of resins selected from these can be used for the structure KB. Further, it may be formed using a photosensitive material. For example, polyimide or the like can be used for the alignment film AF1 or the alignment film AF2. Specifically, an alignment film formed by using a rubbing process or an optical alignment technique so as to be aligned in a predetermined direction can be used.

[0170] 《Alignment films AF1 and AF2》

[0171] 《Optical films 710P and 770P》 For example, a polarizing plate, a retardation plate, a diffusion film, an antireflection film, a condenser film, or the like can be used for the optical film 710P or the optical film 770P. Alternatively, a polarizing plate containing a dichroic dye can be used for the optical film 710P.

[0172] In addition, an antistatic film that suppresses the adhesion of dust, a water-repellent film that makes it difficult for dirt to adhere, a hard coat film that suppresses the occurrence of scratches during use, and the like can be used for the optical film 710P.

[0173] <Configuration example of the touch panel 700B> Another configuration of the touch panel according to an aspect of the present invention will be described with reference to FIG. 6.

[0174] FIG. 6 is a diagram for explaining the configuration of the touch panel 700B according to an aspect of the present invention. FIG. 6(A) is a cross-sectional view of the touch panel 700 according to an aspect of the present invention taken along the cutting lines X1-X2, X3-X4, and X5-X6 shown in FIG. 4(A). Further, FIG. 6(B) is a cross-sectional view for explaining the details of the transistor MDB shown in FIG. 6(A).

[0175] ​​​​​​​​​​​ Note that the touch panel 700B has a conductive film 724B instead of the conductive film 724 (see Fig. 6 (B)), and has a second conductive film C2B(h) instead of the second conductive film C2(h) ( see Fig. 6(A)), which is different from the touch panel 700 described with reference to Fig. 5. Here the different configurations will be described in detail, and for parts where the same configurations can be used, the above description will be incorporated by reference.

[0176] The touch panel 700B described in this embodiment includes a conductive film 724B between the insulating films 721A and 721B and includes a second conductive film C2B between the insulating films 721A and 721B. The conductive film 724B and the second conductive film C2B contain a conductive oxide (see Fig. 6(A) or Fig. 6(B)).

[0177] 《Conductive film 724B, second conductive film C2B(h)》 Specifically, an oxide semiconductor with enhanced conductivity obtained by using a method for controlling the resistivity of an oxide semiconductor can be used for the conductive film 724B and the second conductive film C2B(h). Specifically, conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, an oxide containing indium, gallium, and zinc, zinc oxide, and zinc oxide added with gallium can be used for the conductive film 724B and the second conductive film C2B(h).

[0178] For example, an oxide semiconductor can be used for the conductive film 724B, and a material for diffusing hydrogen can be used for the insulating film 721B provided in contact with the conductive film 724B and the second conductive film C2B(h). This can reduce the resistivity of the conductive film 724B and the second conductive film C2B(h).

[0179]

[0180] Note that at the end of this embodiment mode, a method for controlling the resistivity of the oxide semiconductor will be described in detail.

[0181] <Configuration example of touch panel 700C> Another configuration of the touch panel according to an aspect of the present invention will be described with reference to FIG. 7.

[0182] FIG. 7 is a diagram for explaining the configuration of a touch panel 700C according to an aspect of the present invention. FIG. 7(A) is a cross-sectional view of a touch panel 700 according to an aspect of the present invention taken along the cutting lines X1-X2, X3-X4, and X5-X6 shown in FIG. 4(A). Further, FIG. 7(B) is a cross-sectional view for explaining the details of the transistor MDC shown in FIG. 6(A).

[0183] Note that the touch panel 700C has a top-gate type transistor MC replaced with a bottom-gate type transistor MA, a top-gate type transistor MDC replaced with a bottom-gate type transistor MD, and a second conductive film C2C(h) replaced with a second conductive film C 2(h) (see FIG. 7(A)), which is different from the touch panel 700 described with reference to FIG. 5. Here, different configurations will be described in detail, and parts where the same configurations can be used shall be incorporated by reference to the above description.

[0184] 《Transistor MC, Transistor MDC》 The transistor MDC includes a conductive film 704 having a region overlapping with the insulating film 701C, and a semiconductor film 718 having a region disposed between the insulating film 7 01C and the conductive film 704. Note that the conductive film 704 has the function of a gate electrode (see FIG. 7(B)).

[0185] ​The semiconductor film 718 includes a first region 718A and a second region 718B that do not overlap with the conductive film 704, and a third region 718C that overlaps with the conductive film 704 between the first region 718A and the second region 718B. The transistor MDC includes an insulating film 706 between the third region 718C and the conductive film 704. Note that the insulating film 706 has a function of a gate insulating film. The first region 718A and the second region 718B have a lower resistivity than the third region 718C and have a function of a source region or a drain region.

[0186] Note that, for example, the first region 718A and the second region 718B can be formed in the semiconductor film 718 by using a method for controlling the resistivity of an oxide semiconductor, which will be described in detail at the end of this embodiment. Specifically, plasma processing using a gas containing a rare gas can be applied.

[0187]

[0188]

[0189]

[0190]

[0191]

[0192] The transistor MDC includes a conductive film 712A in contact with the first region 718A and a conductive film 712B in contact with the second region 718B. The conductive film 712A and the conductive film 712B have a function of a source electrode or a drain electrode.

[0191]

[0192] A transistor formed in the same process as the transistor MDC can be used as the transistor MC.

[0192] 《Second Conductive Film C2C(h)》 For example, the same process as that for the first region 718A and the second region 718B of the semiconductor film can be used for the oxide semiconductor formed thereby. As a result, the second conductive film C2C(h) can be formed using a simple process.

[0193] <Configuration example of touch panel 700D> Another configuration of the touch panel according to one aspect of the present invention will be described with reference to FIG. 8.

[0194] FIG. 8 is a diagram for explaining the configuration of a touch panel 700D according to one aspect of the present invention. FIG. 8(A) is a cross-sectional view of the touch panel 700 according to one aspect of the present invention taken along the cutting lines X1-X2, X3-X4, and X5-X6 shown in FIG. 4(A). Further, FIGS. 8(B), 8(C), and 8(D) are cross-sectional views for explaining modified examples of some configurations shown in FIG. 8(A).

[0195] Note that the touch panel 700D is different from the touch panel 700C described with reference to FIG. 7 in that it has an insulating film 728B between the layer 753 containing the liquid crystal material and the insulating film 728A, has the first conductive film C1D(g) instead of the first conductive film C1(g), and has the second conductive film C2D(h) instead of the second conductive film C2C(h). Here, different configurations will be described in detail, and parts where the same configurations can be used will be incorporated by reference to the above description.

[0196] <<Insulating film 728A>> For example, materials that can be used for the insulating film 728 can be used for the insulating film 728A. .

[0197] <<Insulating film 728B>> The touch panel 700D has an insulating film 728 between the layer 753 containing the liquid crystal material and the insulating film 728A. It has B.

[0198] For example, the material that can be used for the insulating film 728 can be used for the insulating film 728B. .

[0199] 《First Conductive Film C1D(g)》 The touch panel 700D has a first conductive film C1 D(g) between the insulating film 728A and the insulating film 728B.

[0200] For example, a conductive film having an opening in a region overlapping with the third conductive film 751 having a comb-like shape can be used for the first conductive film C1D(g).

[0201] For example, a material having conductivity can be used for the first conductive film C1D(g). For example , the material that can be used for the wiring 711 can be used for the first conductive film C1D(g).

[0202] Specifically, a material having conductivity and translucency can be used for the first conductive film C1D(g). For example, conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, and zinc oxide added with gallium can be used. Thereby , a uniform electric field can be supplied without blocking the display of the display element 750.

[0203] 《Second Conductive Film C2D(h)》 A material having conductivity can be used for the second conductive film C2D(h). For example, for the wiring 7 11, the material that can be used can be used for the second conductive film C2D(h).

[0204] Specifically, a material having conductivity and translucency can be used for the second conductive film C2D(h). ​​​can be achieved. For example, conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide added with gallium, etc. can be used. As a result, a uniform electric field can be supplied without blocking the display of the display element 750.

[0205] By the way, a conductive film having a shape overlapping the opening of the third conductive film 751 and the third conductive film 751 can be used as the first conductive film C1D(g) (see FIG. 8(B)).

[0206] Alternatively, a conductive film having a shape that can be disposed in the opening of the third conductive film 751 can be used as the first conductive film C1D(g) (see FIG. 8(C)).

[0207] Alternatively, a conductive film having a shape overlapping the opening of the first conductive film C1D(g) and the first conductive film C1D(g) can be used as the third conductive film 751 (see FIG. 8(D)).

[0208] <Configuration Example of Touch Panel 700E> Another configuration of the touch panel according to an aspect of the present invention will be described with reference to FIG. 24.

[0209] FIG. 24 is a diagram for explaining the configuration of a touch panel 700E according to an aspect of the present invention. FIG. 24(A ) is a cross-sectional view of a touch panel 700 according to an aspect of the present invention taken along the cutting lines X1-X2, X3-X4, X5-X6 shown in FIG. 4(A). Further, FIG. 24(B) is a cross-sectional view for explaining the details of the transistor MDE shown in FIG. 24(A).

[0210] Note that the touch panel 700E has a channel protection type transistor ME replaced with a channel etch type transistor MA, and a channel protection type transistor MDE replaced with a channel The points of having instead of the etched transistor MD, having a colored film CF between the first conductive film C1(g) and the third conductive film 751, and having a light-shielding film BM between the layer 753 containing the liquid crystal material and the substrate 710 (see Fig. 24(A)) are different from the touch panel 700 described with reference to Fig. 5. Here, different configurations will be described in detail, and for parts where the same configurations can be used, the above description will be incorporated by reference. The point of having a colored film CF between the first conductive film C1(g) and the third conductive film 751, and having a light-shielding film BM between the layer 753 containing the liquid crystal material and the substrate 710 (see Fig. 24(A)) is different from the touch panel 700 described with reference to Fig. 5. Here, different configurations will be described in detail, and for parts where the same configurations can be used, the above description will be incorporated by reference. The points of having instead of the etched transistor MD, having a colored film CF between the first conductive film C1(g) and the third conductive film 751, and having a light-shielding film BM between the layer 753 containing the liquid crystal material and the substrate 710 (see Fig. 24(A)) are different from the touch panel 700 described with reference to Fig. 5. Here, different configurations will be described in detail, and for parts where the same configurations can be used, the above description will be incorporated by reference. The points of having instead of the etched transistor MD, having a colored film CF between the first conductive film C1(g) and the third conductive film 751, and having a light-shielding film BM between the layer 753 containing the liquid crystal material and the substrate 710 (see Fig. 24(A)) are different from the touch panel 700 described with reference to Fig. 5. Here, different configurations will be described in detail, and for parts where the same configurations can be used, the above description will be incorporated by reference. The points of having instead of the etched transistor MD, having a colored film CF between the first conductive film C1(g) and the third conductive film 751, and having a light-shielding film BM between the layer 753 containing the liquid crystal material and the substrate 710 (see Fig. 24(A)) are different from the touch panel 700 described with reference to Fig. 5. Here, different configurations will be described in detail, and for parts where the same configurations can be used, the above description will be incorporated by reference.

[0211] 《Transistor ME, Transistor MDE》 Channel-protective transistors can be used for transistor ME and transistor MDE. For example, transistor MDE includes an insulating film 721A disposed to sandwich a semiconductor film 718 between an insulating film 106 that functions as a gate insulating film (see Fig. 24(B)). Channel-protective transistors can be used for transistor ME and transistor MDE. For example, transistor MDE includes an insulating film 721A disposed to sandwich a semiconductor film 718 between an insulating film 106 that functions as a gate insulating film (see Fig. 24(B)). Channel-protective transistors can be used for transistor ME and transistor MDE. For example, transistor MDE includes an insulating film 721A disposed to sandwich a semiconductor film 718 between an insulating film 106 that functions as a gate insulating film (see Fig. 24(B)). Channel-protective transistors can be used for transistor ME and transistor MDE. For example, transistor MDE includes an insulating film 721A disposed to sandwich a semiconductor film 718 between an insulating film 106 that functions as a gate insulating film (see Fig. 24(B)).

[0212] <Method for Controlling the Resistivity of an Oxide Semiconductor> A method for controlling the resistivity of a film containing an oxide semiconductor will be described.

[0213] A film containing an oxide semiconductor having a predetermined resistivity can be used for the second conductive film C2(h) (see Fig. 5(A)), the second conductive film C2B(h) and the conductive film 724B (see Figs. 6(A) and 6(B)), or the second conductive film C2C(h), the first region 718A, and the second region 718B (see Figs. 7(A) and 7(B)). A film containing an oxide semiconductor having a predetermined resistivity can be used for the second conductive film C2(h) (see Fig. 5(A)), the second conductive film C2B(h) and the conductive film 724B (see Figs. 6(A) and 6(B)), or the second conductive film C2C(h), the first region 718A, and the second region 718B (see Figs. 7(A) and 7(B)). A film containing an oxide semiconductor having a predetermined resistivity can be used for the second conductive film C2(h) (see Fig. 5(A)), the second conductive film C2B(h) and the conductive film 724B (see Figs. 6(A) and 6(B)), or the second conductive film C2C(h), the first region 718A, and the second region 718B (see Figs. 7(A) and 7(B)). A film containing an oxide semiconductor having a predetermined resistivity can be used for the second conductive film C2(h) (see Fig. 5(A)), the second conductive film C2B(h) and the conductive film 724B (see Figs. 6(A) and 6(B)), or the second conductive film C2C(h), the first region 718A, and the second region 718B (see Figs. 7(A) and 7(B)).

[0214] For example, a method for controlling the concentration of impurities such as hydrogen and water contained in the oxide semiconductor film and / or oxygen vacancies in the film can be used as a method for controlling the resistivity of the oxide semiconductor. For example, a method for controlling the concentration of impurities such as hydrogen and water contained in the oxide semiconductor film and / or oxygen vacancies in the film can be used as a method for controlling the resistivity of the oxide semiconductor.

[0215] Specifically, plasma treatment can be used in a method for increasing and / or reducing the impurity concentration of hydrogen, water, etc. and / or oxygen vacancies in the film. or reducing it.

[0216] Specifically, plasma treatment performed using a gas containing one or more selected from among rare gases (He, Ne, Ar, Kr, Xe), hydrogen, boron, phosphorus, and nitrogen can be applied. For example, plasma treatment in an Ar atmosphere, plasma treatment in a mixed gas atmosphere of Ar and hydrogen, plasma treatment in an ammonia atmosphere, plasma treatment in a mixed gas atmosphere of Ar and ammonia , or plasma treatment in a nitrogen atmosphere, etc. can be applied. Thereby, an oxide semiconductor film having a high carrier density and a low resistivity can be obtained. , and a low resistivity can be obtained. oxide semiconductor film.

[0217] Alternatively, hydrogen, boron, phosphorus, or nitrogen can be implanted into the oxide semiconductor film using an ion implantation method, an ion doping method, a plasma immersion ion implantation method, etc. to obtain an oxide semiconductor film having a low resistivity.

[0218] Alternatively, a method of forming an insulating film containing hydrogen in contact with the oxide semiconductor film and diffusing hydrogen from the insulating film into the oxide semiconductor film can be used. Thereby, the carrier density of the oxide semiconductor film can be increased and the resistivity can be lowered.

[0219] For example, by forming an insulating film having a hydrogen concentration in the film of 1 × 10 22 atoms / cm 3 or more in contact with the oxide semiconductor film, hydrogen can be effectively incorporated into the oxide semiconductor film. Specifically, it can be used for an insulating film formed in contact with the oxide semiconductor film, such as a silicon nitride film.

[0220] Hydrogen contained in the oxide semiconductor film reacts with oxygen bonded to metal atoms to form water, and oxygen vacancies are formed in the lattice from which oxygen has desorbed (or the portion from which oxygen has desorbed). When hydrogen enters these oxygen vacancies, electrons, which are carriers, may be generated. Also, a part of the hydrogen may bond with oxygen bonded to metal atoms, generating electrons that are carriers. As a result, an oxide semiconductor film with a high carrier density and a low resistivity can be obtained. Specifically, the hydrogen concentration obtained by secondary ion mass spectrometry (SIMS) is 8×10

[0221] or more, preferably 1×10 19 or more, more preferably 5×10 20 atoms / cm 3 or more. Such an oxide semiconductor is suitably used for the second conductive film C2(h) (see Fig. 5(A)), the second conductive film C2B(h), and 20 the conductive film 724B (see Figs. 6(A) and 6(B)) or the second conductive film C2C(h), the first region 718A and the second region 718B (see Figs. 7(A) and 7(B)). On the other hand, an oxide semiconductor with a high resistivity can be used for the semiconductor film in which the channel of the transistor is formed.

[0222] For example, an insulating film containing oxygen, that is, an insulating film capable of releasing oxygen, is formed in contact with the oxide semiconductor, and oxygen is supplied from the insulating film to the oxide semiconductor film to fill oxygen vacancies in the film or at the interface.

[0223] As a result, an oxide semiconductor film with a high resistivity can be obtained.

[0224] ​​​​​ For example, a silicon oxide film or a silicon oxynitride film can be used for an insulating film capable of releasing oxygen.

[0225] An oxide semiconductor film in which oxygen deficiency is compensated and the hydrogen concentration is reduced can be said to be a highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor film. Here, substantially intrinsic means that the carrier density of the oxide semiconductor film is less than 8×10 carriers / cm 11 3 preferably less than 1×10 11 / cm 3 more preferably less than 1×10 10 carriers / cm 3 An oxide semiconductor film that is highly purified intrinsic or substantially highly purified intrinsic has few carrier generation sources, so the carrier density can be lowered. Also, an oxide semiconductor film that is highly purified intrinsic or substantially highly purified intrinsic has a low defect level density, so the trap level density can be reduced.

[0226] 6 -13

[0227] A transistor using the above-described oxide semiconductor film that is highly purified intrinsic or substantially highly purified intrinsic in the channel region has small fluctuations in electrical characteristics and is a highly reliable transistor.

[0228] Specifically, secondary ion mass spectrometry (SIMS) The hydrogen concentration obtained by spectrometry was 2×10 20 atoms / c m 3 Less than or equal to 5×10 19 atoms / cm 3 Less than or equal to 1×10 1 9 atoms / cm 3 Below, 5 x 10 18 atoms / cm 3 Less than 1 x 10 18 atoms / cm 3 Less than or equal to 5×10 17 atoms / cm 3 Below, More preferably, 1×10 16 atoms / cm 3 The following oxide semiconductor is used as a transistor: The present invention can be suitably used for a semiconductor in which a channel of a transistor is formed.

[0229] Note that the transistor MDB includes the semiconductor film 718 and has a higher hydrogen concentration and and / or an oxide semiconductor film having a large amount of oxygen vacancies and low resistivity is used as the conductive film 724B. (See Figure 6(B)).

[0230] Alternatively, the hydrogen concentration in the conductive film 724B is twice as high as the hydrogen concentration in the semiconductor film 718. times or more, preferably 10 times or more.

[0231] The resistivity of the conductive film 724B is 1×10 -8 more than 1×1 0 -1 It is less than double.

[0232] Specifically, the resistivity of the conductive film 724B is 1×10 -3above 1×10 Ωcm 4 less than Ωcm, preferably, above 1×10 -3 Ωcm and less than 1×10 -1 Ωcm.

[0233] Note that this embodiment can be appropriately combined with other embodiments shown in this specification. .

[0234] (Embodiment 2) In this embodiment, a method for driving a touch panel according to an aspect of the present invention will be described with reference to FIGS. 2, 9, and 10.

[0235] FIG. 2 is a diagram for explaining the configuration of the detection element C(g, h) of the touch panel 700 according to an aspect of the present invention shown in FIG. 1. FIG. 2(A) is a top view of the detection element C(g, h) according to an aspect of the present invention, and FIG. 2(B) is a cross-sectional view of the detection element C(g, h) and the pixel 702(i, j) along the cutting line W1-W2 shown in FIG. 2(A).

[0236] FIG. 9 is a flowchart for explaining a method for driving a touch panel according to an aspect of the present invention. FIG. 10 is a timing chart for explaining a method for driving a touch panel according to an aspect of the present invention.

[0237] <Example of Touch Panel Driving Method> The method for driving a touch panel described in this embodiment has the following two steps (see FIG. 9).

[0238] In the first step, a selection signal is electrically connected to the gate electrode of a transistor electrically connected to the third conductive film 751 having a region overlapping with the first conductive film C1(g) and supplied to the scanning line in a predetermined order (see FIG. 9(U1)).

[0239] For example, during period R1, the selection signal GOUT[i-2] is supplied to the scanning line G(i-2), the selection signal GOUT[i-1] is supplied to the scanning line G(i-1), the selection signal GOUT[i] is supplied to the scanning line G( i), and the selection signal GOUT[i+1] is supplied to the scanning line G(i+1) in a predetermined order ( see FIG. 10).

[0240] In the second step, a driving signal is supplied to the first conductive film C1(g), and a change in the potential of the second conductive film having a region overlapping with the first conductive film C1(g) is acquired as a detection signal (see FIG. 9(U2)).

[0241] For example, during period R2, changes in the potentials of the second conductive films C2(1) to C2(q) are acquired as detection signals.

[0242] The touch panel driving method described in this embodiment includes a first step of supplying a selection signal to a scanning line that is electrically connected to a gate electrode of a transistor whose source electrode or drain electrode is electrically connected to a third conductive film 751 having a region overlapping with the first conductive film C1(g ), and a second step of supplying a driving signal to the first conductive film C1(g) during a period when the selection signal is not supplied. By supplying the driving signal to the first conductive film C1(g) while avoiding the period during which the transistor is in the conductive state, the image signal can be surely supplied to the third conductive film 751. Also, a potential of the second conductive film that changes based on the driving signal and the magnitude of the electric field blocked by something close to the input / output panel can be acquired as a detection signal. As a result, a novel touch panel driving method excellent in convenience or reliability can be provided.

[0243] By supplying the driving signal to the first conductive film C1(g) while avoiding the period during which the transistor is in the conductive state, the image signal can be surely supplied to the third conductive film 751. Also, a potential of the second conductive film that changes based on the driving signal and the magnitude of the electric field blocked by something close to the input / output panel can be acquired as a detection signal. As a result, a novel touch panel driving method excellent in convenience or reliability can be provided. or reliability can be provided.

[0244] Note that after all the selection signals GOUT[1] to GOUT[n] are supplied to the predetermined scanning lines G (1) to G(n) (for example, after the period R3), the driving signals COM[1] to COM[p] may be supplied to the predetermined first conductive films C1(1) to C1( p). In other words, during the vertical blanking period R4, the driving signals COM[1] to COM[p] may be supplied to the predetermined first conductive films C1(1) to C1(p).

[0245] Note that this embodiment can be appropriately combined with other embodiments described in this specification .

[0246] (Embodiment 3) In this embodiment, the configuration of the transistor that can be used for a touch panel according to an aspect of the present invention will be described with reference to FIG. 11.

[0247] <Configuration example of semiconductor device> FIG. 11(A) is a top view of the transistor 100, and FIG. 11(C) corresponds to a cross-sectional view of the cut surface between the cut lines X1-X2 shown in FIG. 11(A), and FIG. 11(D) corresponds to a cross-sectional view of the cut surface between the cut lines Y1-Y2 shown in FIG. 11(A ). Note that in FIG. 11(A ), in order to avoid complexity, some of the components of the transistor 100 (such as the insulating film that functions as a gate insulating film) are omitted in the illustration. Also, the direction of the cut line X1-X2 may be referred to as the channel length direction, and the direction of the cut line Y1-Y2 may be referred to as the channel width direction. Note that in the top view of the transistor, as in FIG. 11(A) in the following drawings, some of the components may be omitted in the illustration. ​​​​​​

[0248] Note that the transistor 100 can be used for the touch panel described in Embodiment 1. 。

[0249] For example, when the transistor 100 is used as the transistor MA, the substrate 102 is replaced with the base material 71 0 and the laminated material of the insulating film 701, the conductive film 104 is replaced with the conductive film 704, the laminated film of the insulating film 106 and the insulating film 107 is replaced with 706, the oxide semiconductor film 108 is replaced with the semiconductor film 718, and the conductive film 112a is replaced with the conductive film 712A, the conductive film 112b is replaced with the conductive film 712B, and the laminated film of the insulating film 114 and the insulating film 116 is replaced with the insulating film 721A, and the insulating film 118 is replaced with the insulating film 721B, respectively. can be read.

[0250] The transistor 100 includes a conductive film 104 that functions as a gate electrode on the substrate 102, the substrate 102 and the insulating film 106 on the conductive film 104, the insulating film 107 on the insulating film 106, the insulating film 107 and an oxide semiconductor film 108 on the insulating film 107, a source electrode that is electrically connected to the oxide semiconductor film 108 and functions as a source electrode, and a drain electrode that is electrically connected to the oxide semiconductor film 108 and functions as a drain electrode. Further, on the transistor 100, more specifically, insulating films 114, 116, and insulating film 118 are provided on the conductive films 112a, 112b, and the oxide semiconductor film 108. The insulating films 114, 116, 118 have a function as a protective insulating film of the transistor 100.

[0251] Further, the oxide semiconductor film 108 includes a first oxide semiconductor film 108a on the side of the conductive film 104 that functions as a gate electrode, and a second oxide semiconductor film 108 on the first oxide semiconductor film 108a It has b. Also, the insulating films 106 and 107 are the gates of the transistor 100 have the function as an insulating film.

[0252] As the oxide semiconductor film 108, In-M (where M represents Ti, Ga, Sn, Y, Zr, La, Ce, Nd, or Hf) oxide, In-M-Zn oxide can be used. In particular, it is preferable to use In-M-Zn oxide as the oxide semiconductor film 108.

[0253] Also, the first oxide semiconductor film 108a has a first region where the atomic ratio of In is larger than the atomic ratio of M. Also, the second oxide semiconductor film 108b has a second region where the atomic ratio of In is smaller than that of the first oxide semiconductor film 108a . Also, the second region has a portion thinner than the first region.

[0254] By having a first region in the first oxide semiconductor film 108a where the atomic ratio of In is larger than the atomic ratio of M the field-effect mobility (simply referred to as mobility or μFE in some cases) of the transistor 100 can be increased. Specifically, the field-effect mobility of the transistor 100 can exceed 10 cm / Vs. 2

[0255] For example, by using the transistor with the above high field-effect mobility as a gate driver (in particular, a demultiplexer connected to the output terminal of the shift register included in the gate driver) a semiconductor device or a display device with a narrow frame width (also referred to as a narrow-frame) can be provided.

[0256] On the other hand, the first oxide semiconductor having a first region where the atomic ratio of In is larger than the atomic ratio of M ​​​​By using the film 108a, the electrical characteristics of the transistor 100 are likely to vary when irradiated with light. . However, in the semiconductor device according to one aspect of the present invention, a second oxide semiconductor film 108b is formed on the first oxide semiconductor film 108 a. Also, the film thickness of the channel region of the second oxide semiconductor film 1 08b is smaller than the film thickness of the first oxide semiconductor film 108a.

[0257] Further, since the second oxide semiconductor film 108b has a second region with a smaller atomic ratio of In than the first oxide semiconductor film 108a, Eg becomes larger than that of the first oxide semiconductor film 108a . Therefore, the oxide semiconductor film 108 having a stacked structure of the first oxide semiconductor film 108a and the second oxide semiconductor film 108 b has higher resistance to the photo negative bias stress test. By using the oxide semiconductor film having the above configuration, the light absorption yield of the oxide semiconductor film 108 during light irradiation can be reduced. Therefore, fluctuations in the electrical characteristics of the transistor 100 during light irradiation can be suppressed. Also, in the semiconductor device according to one aspect of the present invention, due to the configuration in which the insulating film 114 or the insulating film 116 contains excess oxygen, fluctuations in the electrical characteristics of the transistor 100 during light irradiation can be further suppressed.

[0258] Here, the oxide semiconductor film 108 will be described in detail with reference to FIG. 11(B). FIG. 11(B) is an enlarged cross-sectional view of the vicinity of the oxide semiconductor film 108 of the cross-section of the transistor 100 shown using FIG. 11(C). Since the insulating film 114 or the insulating film 116 has a configuration containing excess oxygen, fluctuations in the electrical characteristics of the transistor 100 during light irradiation can be further suppressed.

[0259] Here, the oxide semiconductor film 108 will be described in detail with reference to FIG. 11(B).

[0260] FIG. 11(B) is an enlarged cross-sectional view of the vicinity of the oxide semiconductor film 108 of the cross-section of the transistor 100 shown using FIG. 11(C).

[0261] In FIG. 11B, the thickness of the first oxide semiconductor film 108a is t1. The thicknesses of the compound semiconductor film 108b are indicated as t2-1 and t2-2, respectively. Since the second oxide semiconductor film 108b is provided over the first oxide semiconductor film 108a, During the formation of the conductive films 112a and 112b, the first oxide semiconductor film 108a is etched. Therefore, the first oxide semiconductor is not exposed to etching gas or etching solution. The thickness of the second oxide film 108a is either not reduced or is very small. In the conductive film 108b, the second oxide The portions of the semiconductor film 108b that do not overlap with the conductive films 112a and 112b are etched to form recesses. That is, the conductive films 112a and 112b of the second oxide semiconductor film 108b are The thickness of the overlapping region is t2-1. The thickness of the region not overlapping with 112b is t2-2.

[0262] The relationship between the thicknesses of the first oxide semiconductor film 108a and the second oxide semiconductor film 108b is t2- It is preferable that t1>t1>t2-2. By making such a film thickness relationship, high A transistor having a high field effect mobility and a small variation in threshold voltage when irradiated with light. It is possible to make it a star.

[0263] In addition, when oxygen vacancies are formed in the oxide semiconductor film 108 of the transistor 100, Therefore, the oxide semiconductor tends to have a normally-on characteristic. To reduce oxygen vacancies in the film 108, particularly in the first oxide semiconductor film 108a. is also important for obtaining stable transistor characteristics. Therefore, in the configuration of the transistor according to one aspect of the present invention, by introducing excess oxygen into the insulating film on the oxide semiconductor film 108, here, the insulating film 114 and / or the insulating film 116 on the oxide semiconductor film 108, oxygen is moved from the insulating film 114 and / or the insulating film 116 into the oxide semiconductor film 108 to fill the oxygen vacancies in the oxide semiconductor film 108, particularly in the first oxide semiconductor film 108a. In the configuration of the transistor, it is characterized in that. In the configuration of the transistor, by introducing excess oxygen into the insulating film 114 and / or the insulating film 116 on the oxide semiconductor film 108, oxygen is moved from the insulating film 114 and / or the insulating film 116 into the oxide semiconductor film 108 to fill the oxygen vacancies in the oxide semiconductor film 108, particularly in the first oxide semiconductor film 108a. In the configuration of the transistor, by introducing excess oxygen into the insulating film 114 and / or the insulating film 116 on the oxide semiconductor film 108, oxygen is moved from the insulating film 114 and / or the insulating film 116 into the oxide semiconductor film 108 to fill the oxygen vacancies in the oxide semiconductor film 108, particularly in the first oxide semiconductor film 108a. In the configuration of the transistor, by introducing excess oxygen into the insulating film 114 and / or the insulating film 116 on the oxide semiconductor film 108, oxygen is moved from the insulating film 114 and / or the insulating film 116 into the oxide semiconductor film 108 to fill the oxygen vacancies in the oxide semiconductor film 108, particularly in the first oxide semiconductor film 108a. is characterized in that.

[0264] Note that, as the insulating films 114 and 116, it is more preferable to have a region containing oxygen in excess of the stoichiometric composition (oxygen-excess region). In other words, the insulating films 114 and 116 are insulating films capable of releasing oxygen. To provide an oxygen-excess region in the insulating films 114 and 116, for example, oxygen is introduced into the insulating films 114 and 116 after film formation to form an oxygen-excess region. As a method for introducing oxygen, an ion implantation method, an ion doping method, a plasma immersion ion implantation method, a plasma treatment, or the like can be used. Note that, as the insulating films 114 and 116, it is more preferable to have a region containing oxygen in excess of the stoichiometric composition (oxygen-excess region). In other words, the insulating films 114 and 116 are insulating films capable of releasing oxygen. To provide an oxygen-excess region in the insulating films 114 and 116, for example, oxygen is introduced into the insulating films 114 and 116 after film formation to form an oxygen-excess region. As a method for introducing oxygen, an ion implantation method, an ion doping method, a plasma immersion ion implantation method, a plasma treatment, or the like can be used. Note that, as the insulating films 114 and 116, it is more preferable to have a region containing oxygen in excess of the stoichiometric composition (oxygen-excess region). In other words, the insulating films 114 and 116 are insulating films capable of releasing oxygen. To provide an oxygen-excess region in the insulating films 114 and 116, for example, oxygen is introduced into the insulating films 114 and 116 after film formation to form an oxygen-excess region. As a method for introducing oxygen, an ion implantation method, an ion doping method, a plasma immersion ion implantation method, a plasma treatment, or the like can be used. Note that, as the insulating films 114 and 116, it is more preferable to have a region containing oxygen in excess of the stoichiometric composition (oxygen-excess region). In other words, the insulating films 114 and 116 are insulating films capable of releasing oxygen. To provide an oxygen-excess region in the insulating films 114 and 116, for example, oxygen is introduced into the insulating films 114 and 116 after film formation to form an oxygen-excess region. As a method for introducing oxygen, an ion implantation method, an ion doping method, a plasma immersion ion implantation method, a plasma treatment, or the like can be used. Note that, as the insulating films 114 and 116, it is more preferable to have a region containing oxygen in excess of the stoichiometric composition (oxygen-excess region). In other words, the insulating films 114 and 116 are insulating films capable of releasing oxygen. To provide an oxygen-excess region in the insulating films 114 and 116, for example, oxygen is introduced into the insulating films 114 and 116 after film formation to form an oxygen-excess region. As a method for introducing oxygen, an ion implantation method, an ion doping method, a plasma immersion ion implantation method, a plasma treatment, or the like can be used. Note that, as the insulating films 114 and 116, it is more preferable to have a region containing oxygen in excess of the stoichiometric composition (oxygen-excess region). In other words, the insulating films 114 and 116 are insulating films capable of releasing oxygen. To provide an oxygen-excess region in the insulating films 114 and 116, for example, oxygen is introduced into the insulating films 114 and 116 after film formation to form an oxygen-excess region. As a method for introducing oxygen, an ion implantation method, an ion doping method, a plasma immersion ion implantation method, a plasma treatment, or the like can be used.

[0265] Also, in order to fill the oxygen vacancies in the first oxide semiconductor film 108a, it is preferable to reduce the film thickness in the vicinity of the channel region of the second oxide semiconductor film 108b. Therefore, the relationship of t2 - 2 < t1 may be satisfied. For example, the film thickness in the vicinity of the channel region of the second oxide semiconductor film 108b is preferably 1 nm or more and 20 nm or less, more preferably 3 nm or more and 10 nm or less. Also, in order to fill the oxygen vacancies in the first oxide semiconductor film 108a, it is preferable to reduce the film thickness in the vicinity of the channel region of the second oxide semiconductor film 108b. Therefore, the relationship of t2 - 2 < t1 may be satisfied. For example, the film thickness in the vicinity of the channel region of the second oxide semiconductor film 108b is preferably 1 nm or more and 20 nm or less, more preferably 3 nm or more and 10 nm or less. Also, in order to fill the oxygen vacancies in the first oxide semiconductor film 108a, it is preferable to reduce the film thickness in the vicinity of the channel region of the second oxide semiconductor film 108b. Therefore, the relationship of t2 - 2 < t1 may be satisfied. For example, the film thickness in the vicinity of the channel region of the second oxide semiconductor film 108b is preferably 1 nm or more and 20 nm or less, more preferably 3 nm or more and 10 nm or less. Also, in order to fill the oxygen vacancies in the first oxide semiconductor film 108a, it is preferable to reduce the film thickness in the vicinity of the channel region of the second oxide semiconductor film 108b. Therefore, the relationship of t2 - 2 < t1 may be satisfied. For example, the film thickness in the vicinity of the channel region of the second oxide semiconductor film 108b is preferably 1 nm or more and 20 nm or less, more preferably 3 nm or more and 10 nm or less. Also, in order to fill the oxygen vacancies in the first oxide semiconductor film 108a, it is preferable to reduce the film thickness in the vicinity of the channel region of the second oxide semiconductor film 108b. Therefore, the relationship of t2 - 2 < t1 may be satisfied. For example, the film thickness in the vicinity of the channel region of the second oxide semiconductor film 108b is preferably 1 nm or more and 20 nm or less, more preferably 3 nm or more and 10 nm or less.

[0266] Hereinafter, other components included in the semiconductor device of the present embodiment will be described in detail. Hereinafter, other components included in the semiconductor device of the present embodiment will be described in detail.

[0267] "Substrate" There are no major restrictions on the material of the substrate 102, etc., but at least it must have heat resistance to withstand subsequent heat treatment. For example, a glass substrate, a ceramic substrate, a quartz substrate, a sapphire substrate, etc. may be used as the substrate 102. Also, a single crystal semiconductor substrate made of silicon or silicon carbide, a polycrystalline semiconductor substrate, a compound semiconductor substrate such as silicon germanium, an SOI substrate, etc. can also be applied, and a semiconductor element provided on these substrates may be used as the substrate 102. When using a glass substrate as the substrate 102, large-sized display devices can be manufactured by using large-area substrates such as the 6th generation (1500 mm × 1850 mm), 7th generation (1870 mm × 2200 mm), 8th generation (2200 mm × 2400 mm), 9th generation (2400 mm × 2800 mm), 10th generation (2950 mm × 3400 mm), etc. In addition, a flexible substrate may be used as the substrate 102, and the transistor 100 may be formed directly on the flexible substrate. Or, a release layer may be provided between the substrate 102 and the transistor 100. The release layer can be used to separate from the substrate 102 after partially or completely completing a semiconductor device thereon and transfer it to another substrate. At that time, the transistor 100 can also be transferred to a substrate with poor heat resistance or a flexible substrate. "Conductive Films Functioning as Gate Electrodes, Source Electrodes, and Drain Electrodes" As the conductive film 104 functioning as a gate electrode, the conductive film 112a functioning as a source electrode, and the conductive film 112b functioning as a drain electrode, chromium (Cr), copper (Cu ), etc.

[0268] Moreover, a flexible substrate may be used as the substrate 102, and the transistor 100 may be formed directly on the flexible substrate. Or, a release layer may be provided between the substrate 102 and the transistor 100. The release layer can be used to separate from the substrate 102 after partially or completely completing a semiconductor device thereon and transfer it to another substrate. At that time, the transistor 100 can also be transferred to a substrate with poor heat resistance or a flexible substrate. The release layer can be used to separate from the substrate 102 after partially or completely completing a semiconductor device thereon and transfer it to another substrate. At that time, the transistor 100 can also be transferred to a substrate with poor heat resistance or a flexible substrate. When the release layer is used, after partially or completely completing a semiconductor device thereon, it can be separated from the substrate 102 and transferred to another substrate. At this time, the transistor 100 can also be transferred to a substrate with poor heat resistance or a flexible substrate. When the release layer is used, after partially or completely completing a semiconductor device thereon, it can be separated from the substrate 102 and transferred to another substrate. At this time, the transistor 100 can also be transferred to a substrate with poor heat resistance or a flexible substrate.

[0269] "Conductive Films Functioning as Gate Electrodes, Source Electrodes, and Drain Electrodes" As the conductive film 104 functioning as a gate electrode, the conductive film 112a functioning as a source electrode, and the conductive film 112b functioning as a drain electrode, chromium (Cr), copper (Cu ), etc. ) Aluminum (Al), gold (Au), silver (Ag), zinc (Zn), molybdenum (Mo ), tantalum (Ta), titanium (Ti), tungsten (W), manganese (Mn), nick el (Ni), iron (Fe), cobalt (Co), or an alloy containing the above-mentioned meta l elements, or an alloy obtained by combining the above-mentioned metal elements, etc. can be used to form each of them .

[0270] Also, the conductive films 104, 112a, and 112b may have a single-layer structure or a laminated structure of two or more layers . For example, a single-layer structure of an aluminum film containing silicon, a two-layer structure in which a titanium film is laminated on an aluminum film, a two-layer structure in which a titanium film is laminated on a titanium nitride film, a two-layer structure in which a tungsten film is laminated on a titanium nitride film, a two-layer structure in which a tungsten film is laminated on a tantalum nitride film or a tungsten nitride film, a three-layer structure in which a titanium film and an aluminum film are laminated on the titanium film and a titanium film is further formed thereon, etc. There are also. Also, an alloy film or a nitride film obtained by combining one or more selected from titanium, tantalum, tungsten, molybdenum, chromium, neodymium, and scandium with aluminum may be used . . . . In addition, one or more selected from titanium, tantalum, tungsten, molybdenum, chromium, neodymium, and scandium are combined .

[0271] Also, for the conductive films 104, 112a, and 112b, indium tin oxide, indium oxide containing tungsten oxide , indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide , indium tin oxide containing titanium oxide, indium zinc oxide , indium tin oxide added with silicon oxide, etc., a conductive material having translucency can be applied .

[0272] Also, for the conductive films 104, 112a, and 112b, a Cu-X alloy film (X is Mn, Ni, C r, Fe, Co, Mo, Ta, or Ti) may be applied. Using a Cu-X alloy film makes it possible to process in a wet etching process, thus suppressing the manufacturing cost to be possible.

[0273] 《Insulating Films Functioning as Gate Insulating Films》 As the insulating films 106 and 107 functioning as the gate insulating film of the transistor 100, by plasma enhanced chemical vapor deposition (PECVD), sputtering method, etc., silicon oxide films, silicon oxynitride films, silicon nitride oxide films, silicon nitride films, aluminum oxide films, hafnium oxide films, yttrium oxide films, zirconium oxide films, gallium oxide films, tantalum oxide films, magnesium oxide films, lanthanum oxide films, cerium oxide films, and neodymium oxide films including one or more kinds can be used respectively. Note that, without forming a stacked structure of the insulating films 106 and 107, a single-layer insulating film selected from the above materials, or an insulating film of three or more layers may be used.

[0274] Also, the insulating film 106 has a function as a blocking film that suppresses oxygen permeation. For example, when supplying excessive oxygen into the insulating films 107, 114, 116 and / or the oxide semiconductor film 108, the insulating film 106 can suppress oxygen permeation.

[0275] Note that the insulating film 107 in contact with the oxide semiconductor film 108 functioning as the channel region of the transistor 100 is preferably an oxide insulating film, and more preferably has a region (oxygen-excess region) containing oxygen in excess of the stoichiometric composition. In other words, the insulating film 10 ​​7 is an insulating film capable of releasing oxygen. To provide an oxygen-excess region in the insulating film 107, for example, the insulating film 107 may be formed in an oxygen atmosphere. Alternatively, oxygen may be introduced into the insulating film 107 after film formation to form an oxygen-excess region. As a method for introducing oxygen, an ion implantation method, an ion doping method, a plasma immersion ion implantation method, a plasma treatment, or the like can be used. When forming the insulating film 107, for example, it may be formed in an oxygen atmosphere. Or, oxygen may be introduced into the formed insulating film 107 to form an oxygen-excess region. As a method for introducing oxygen, an ion implantation method, an ion doping method, a plasma immersion ion implantation method, a plasma treatment, or the like can be used.

[0276] In addition, when hafnium oxide is used as the insulating film 107, the following effects can be obtained. Hafnium oxide has a higher relative permittivity than silicon oxide or silicon oxynitride. Therefore, since the film thickness can be made larger compared to the case of using silicon oxide, the leakage current due to the tunnel current can be reduced. That is, a transistor with a small off-current can be realized. Furthermore, hafnium oxide having a crystal structure has a higher relative permittivity than hafnium oxide having an amorphous structure. Therefore, in order to obtain a transistor with a small off-current, it is preferable to use hafnium oxide having a crystal structure. Examples of the crystal structure include monoclinic and cubic systems. However, one aspect of the present invention is not limited thereto. Hafnium oxide has a higher relative permittivity than silicon oxide or silicon oxynitride. Therefore, since the film thickness can be made larger compared to the case of using silicon oxide, the leakage current due to the tunnel current can be reduced. That is, a transistor with a small off-current can be realized. Furthermore, hafnium oxide having a crystal structure has a higher relative permittivity than hafnium oxide having an amorphous structure. Therefore, in order to obtain a transistor with a small off-current, it is preferable to use hafnium oxide having a crystal structure. Examples of the crystal structure include monoclinic and cubic systems. However, one aspect of the present invention is not limited thereto. Examples of the crystal structure include monoclinic and cubic systems. However, one aspect of the present invention is not limited thereto. That is, a transistor with a small off-current can be realized. Furthermore, hafnium oxide having a crystal structure has a higher relative permittivity than hafnium oxide having an amorphous structure. Therefore, in order to obtain a transistor with a small off-current, it is preferable to use hafnium oxide having a crystal structure. Examples of the crystal structure include monoclinic and cubic systems. However, one aspect of the present invention is not limited thereto.

[0277] In this embodiment, a silicon nitride film is formed as the insulating film 106, and a silicon oxide film is formed as the insulating film 107. The silicon nitride film has a higher relative permittivity than the silicon oxide film, and since the film thickness required to obtain the same capacitance as the silicon oxide film is large, including the silicon nitride film as the gate insulating film of the transistor 150 can physically thicken the insulating film. Therefore, a decrease in the breakdown voltage of the insulating film of the transistor 100 can be suppressed, and further insulation By including the silicon nitride film as the gate insulating film of the transistor 150, the insulating film can be physically thickened. Therefore, a decrease in the breakdown voltage of the insulating film of the transistor 100 can be suppressed, and further The breakdown voltage can be improved to suppress the electrostatic breakdown of the transistor 100.

[0278] 《Oxide semiconductor film》 As the oxide semiconductor film 108, the materials shown above can be used.

[0279] When the oxide semiconductor film 108 is an In-M-Zn oxide, the In-M-Zn oxide is formed into a film For this purpose, the atomic ratio of the metal elements of the sputtering target used is preferably In≧M and Zn≧M. As such an atomic ratio of the metal elements of the sputtering target, In:M:Zn = 1:1:1, In:M:Zn = 1:1:1.2, In:M:Zn = 2:1:3, In:M:Zn = 3:1:2, In:M:Zn = 4:2:4.1 are preferred.

[0280] Also, when the oxide semiconductor film 108 is an In-M-Zn oxide, it is preferable to use a target containing polycrystalline In-M-Zn oxide as the sputtering target. By using a target containing polycrystalline In-M-Zn oxide, it becomes easier to form the oxide semiconductor film 108 having crystallinity. Note that the atomic ratio of the formed oxide semiconductor film 108 includes a variation of plus or minus 40% of the atomic ratio of the metal elements contained in the above sputtering target as an error. For example, when a target having an atomic ratio of In:Ga:Zn = 4:2:4.1 is used as the sputtering target, the atomic ratio of the formed oxide semiconductor film 108 may be in the vicinity of In:Ga:Zn = 4:2:3.

[0281] For example, as the first oxide semiconductor film 108a, In:M:Zn = 2:1:3 described above It may be formed using sputtering targets with In:M:Zn = 3:1:2, In:M:Zn = 4:2:4.1, etc. Also, as the second oxide semiconductor film 108b, the above-mentioned may be formed using In:M:Zn = 1:1:1, In:M:Zn = 1:1:1.2, etc. Note that the atomic ratio of the metal elements of the sputtering target used for the second oxide semiconductor film 108b does not necessarily need to satisfy In≥M and Zn≥M, and a composition satisfying In≥M and Zn<M may also be used. Specifically, examples include In:M:Zn = 1:3:2, etc.

[0282] Also, the oxide semiconductor film 108 has an energy gap of 2 eV or more, preferably 2.5 eV or more, more preferably 3 eV or more. By using such an oxide semiconductor with a wide energy gap, the off-current of the transistor 100 can be reduced. In particular, for the first oxide semiconductor film 108a, an oxide semiconductor film with an energy gap of 2 eV or more, preferably 2 eV or more and 3.0 eV or less is used, and for the second oxide semiconductor film 108b, using an oxide semiconductor film with an energy gap of 2.5 eV or more and 3.5 eV or less is preferable. Also, it is preferable that the energy gap of the second oxide semiconductor film 108b is larger than that of the first oxide semiconductor film 108a.

[0283] Also, the thicknesses of the first oxide semiconductor film 108a and the second oxide semiconductor film 108b are each 3 nm or more and 200 nm or less, preferably 3 nm or more and 100 nm or less, more preferably 3 nm or more and 50 nm or less. It is preferable to satisfy the above-described film thickness relationship.

[0284] Also, as the second oxide semiconductor film 108b, an oxide semiconductor film with a low carrier density is used​​​​​​​ exist. For example, the second oxide semiconductor film 108b has a carrier density of 1×10 17 per cm 3 or less, preferably 1×10 15 per cm 3 or less, more preferably 1×10 13 per c m 3 or less, even more preferably 1×10 11 per cm 3 or less.

[0285] Note that the present invention is not limited to these, and those having an appropriate composition may be used according to the semiconductor characteristics and electrical characteristics (field effect mobility, threshold voltage, etc.) of the required transistor. Further, in order to obtain the semiconductor characteristics of the required transistor, it is preferable that the carrier density, impurity concentration, defect density, atomic number ratio of metal element to oxygen, interatomic distance, density, etc. of the first oxide semiconductor film 108a and the second oxide semiconductor film 108b are appropriate.

[0286] Note that as the first oxide semiconductor film 108a and the second oxide semiconductor film 108b, by using oxide semiconductor films having low impurity concentrations and low defect level densities respectively, it is preferable that transistors having further excellent electrical characteristics can be fabricated. Here, those having low impurity concentrations and low defect level densities (few oxygen deficiencies) are called high-purity intrinsic or substantially high-purity intrinsic. An oxide semiconductor film that is high-purity intrinsic or substantially high-purity intrinsic has few carrier generation sources, so that the carrier density can be lowered. Therefore, a transistor in which a channel region is formed in the oxide semiconductor film is less likely to have an electrical characteristic in which the threshold voltage becomes negative (also called normally-on). Further, high-purity intrinsic or substantially high Since the purity of the intrinsic oxide semiconductor film is low, the density of defect states is also low. In addition, a highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor film may be formed by The current is extremely small, and the channel width is 1×10 6 μm and the channel length L is 10 μm. However, the voltage between the source and drain electrodes (drain voltage) is in the range of 1V to 10V. The off-state current is below the measurement limit of the semiconductor parameter analyzer, that is, 1×10 -13 It is possible to obtain a characteristic of A or less.

[0287] Therefore, the high-purity intrinsic or substantially high-purity intrinsic oxide semiconductor film has a channel region. The transistors in which this region is formed have small fluctuations in electrical characteristics and are highly reliable. Note that charges trapped in the trap states of the oxide semiconductor film can be dissipated. It takes a long time for the charge to reach the target, and it may behave as if it were a fixed charge. A transistor in which a channel region is formed in an oxide semiconductor film with a high density of trap states has The characteristics may become unstable. Impurities include hydrogen, nitrogen, alkali metals, or arsenic. Alkaline earth metals, etc.

[0288] Hydrogen contained in the oxide semiconductor film reacts with oxygen that is bonded to metal atoms to become water. Oxygen vacancies are formed in the lattice from which oxygen has been removed (or in the portion from which oxygen has been removed). When hydrogen enters, electrons, which act as carriers, may be generated. Also, some of the hydrogen may be converted to gold. It can combine with oxygen, which is a carrier of electrons, to produce a A transistor using an oxide semiconductor film containing hydrogen is likely to be normally on. Therefore, it is preferable that the hydrogen in the oxide semiconductor film 108 is reduced as much as possible. Specifically, in the oxide semiconductor film 108, the hydrogen concentration obtained by SIMS analysis is 2×10 20 atoms / cm 3 or less, preferably 5×10 19 atoms / cm 3 or less, more preferably 1×10 19 atoms / cm 3 or less, 5×10 18 atoms / cm 3 or less, preferably 1×10 18 atoms / cm 3 or less, more preferably 5×10 17 atoms / cm 3 or less, even more preferably 1×10 16 atoms / cm 3 or less, and so on.

[0289] In addition, it is preferable that the first oxide semiconductor film 108a has a portion with a lower hydrogen concentration than the second oxide semiconductor film 108b. Since the first oxide semiconductor film 108a has a portion with a lower hydrogen concentration than the second oxide semiconductor film 108b, a highly reliable semiconductor device can be obtained. semiconductor film 108b, a highly reliable semiconductor device can be obtained.

[0290] In addition, if silicon or carbon, which is one of the Group 14 elements, is contained in the first oxide semiconductor film 108a, oxygen deficiency increases in the first oxide semiconductor film 108a and it becomes n-type. Therefore, the concentration of silicon or carbon in the first oxide semiconductor film 108a and the concentration of silicon or carbon near the interface with the first oxide semiconductor film 108a (the concentration obtained by SIMS analysis) are 2×10 atoms / cm or less, preferably 2×10 18 atoms / cm 3 or less, preferably 2×1017 ato ms / cm 3 Shall be as follows.

[0291] Further, in the first oxide semiconductor film 108a, the concentration of an alkali metal or an alkaline earth metal obtained by SIMS analysis is 1 × 10 18 atoms / cm 3 or less, preferably 2 × 10 16 atoms / cm 3 or less. When an alkali metal and an alkaline earth metal combine with an oxide semiconductor, carriers may be generated, and the off-current of the transistor may increase. Therefore, it is preferable to reduce the concentration of the alkali metal or the alkaline earth metal in the first oxide semiconductor film 108a.

[0292] Further, when nitrogen is contained in the first oxide semiconductor film 108a, electrons as carriers are generated, the carrier density increases, and it is likely to be n-type. As a result, a transistor using an oxide semiconductor film containing nitrogen is likely to have normally-on characteristics. Therefore, in the oxide semiconductor film, it is preferable that nitrogen is reduced as much as possible. For example, the nitrogen concentration obtained by SIMS analysis is 5 × 10 atoms / cm 18 or less. 3 It is preferably made as follows.

[0293] Further, the first oxide semiconductor film 108a and the second oxide semiconductor film 108b may each have a non-single crystal structure. The non-single crystal structure includes, for example, CAAC-OS (C Axially Aligned Crystalline Oxide Semiconducto r), polycrystalline structure, microcrystalline structure, or amorphous structure described later. In the non-single crystal structure, amorphous r) The quality structure has the highest density of defect levels, and CAAC-OS has the lowest density of defect levels.

[0294] 《Insulating Film Functioning as a Protective Insulating Film for a Transistor》 The insulating films 114 and 116 have a function of supplying oxygen to the oxide semiconductor film 108. Also, the insulating film 118 has a function as a protective insulating film for the transistor 100. Also, the insulating film 114 and 116 contain oxygen. Also, the insulating film 114 is an insulating film that can permeate oxygen. Note that the insulating film 114 also functions as a damage relaxation film for the oxide semiconductor film 108 when forming the insulating film 116 formed later.

[0295] As the insulating film 114, silicon oxide, silicon oxynitride, etc. with a thickness of 5 nm or more and 150 nm or less, preferably 5 nm or more and 50 nm or less can be used.

[0296] Also, the insulating film 114 preferably has a small amount of defects. Typically, by ESR measurement, the spin density of the signal appearing at g = 2.001 derived from the dangling bonds of silicon is 3×10 17 spins / cm 3 or less. This is because if the defect density contained in the insulating film 114 is high, oxygen will bind to the defects, and the oxygen permeation amount in the insulating film 114 will decrease.

[0297] Note that in the insulating film 114, all the oxygen that enters the insulating film 114 from the outside does not move outside the insulating film 114, and there is also oxygen remaining in the insulating film 114. Also, when oxygen enters the insulating film 114, the oxygen contained in the insulating film 114 moves outside the insulating film 114, and thus oxygen movement may occur in the insulating film 114. Oxygen permeates through the insulating film 114. ​ When an oxide insulating film that can be formed is formed, oxygen that is released from the insulating film 116 and provided on the insulating film 114 can be moved to the oxide semiconductor film 108 through the insulating film 114.

[0298] In addition, the insulating film 114 can be formed using an oxide insulating film having a low density of levels caused by nitrogen oxides. Note that the density of levels caused by the nitrogen oxides may be formed between the energy (Ev_os) at the upper end of the valence band of the oxide semiconductor film and the energy (Ec_os) at the lower end of the conduction band of the oxide semiconductor film. As the oxide insulating film, a silicon oxynitride film with a small amount of nitrogen oxide emission or an aluminum oxynitride film with a small amount of nitrogen oxide emission can be used.

[0299] Note that a silicon oxynitride film with a small amount of nitrogen oxide emission is a film in which the ammonia emission amount is larger than the nitrogen oxide emission amount in the temperature-programmed desorption gas analysis method. Typically, the ammonia emission amount is 1×10 18 3 19 3 or more and 5×10

[0300] x It may be wrapped. As a result, since the trapped electrons stay near the interface between the insulating film 114 and the oxide semiconductor film 108, the threshold voltage of the transistor is shifted in the positive direction.

[0301] Also, nitrogen oxides react with ammonia and oxygen in the heat treatment. The nitrogen oxides contained in the insulating film 114 react with the ammonia contained in the insulating film 116 in the heat treatment, so the nitrogen oxides contained in the insulating film 114 are reduced. Therefore, electrons are less likely to be trapped at the interface between the insulating film 114 and the oxide semiconductor film 108.

[0302] By using the above oxide insulating film as the insulating film 114, it is possible to reduce the shift of the threshold voltage of the transistor and reduce the variation in the electrical characteristics of the transistor.

[0303] Note that by heat treatment in the manufacturing process of the transistor, typically heat treatment at 300 °C or higher and less than 350 °C, the insulating film 114 has a first signal with a g value of 2.037 or more and 2.039 or less, a second signal with a g value of 2.001 or more and 2.003 or less, and a third signal with a g value of 1.964 or more and 1.966 or less in the spectrum obtained by measurement with an ESR of 100 K or less. Note that the split widths of the first signal and the second signal, and the split widths of the second signal and the third signal are about 5 mT in the X-band ESR measurement. Also, the sum of the spin densities of the first signal with a g value of 2.037 or more and 2.039 or less, the second signal with a g value of 2.001 or more and 2.003 or less, and the third signal with a g value of 1.964 or more and 1.966 or less is 1×10 18 spins / cm3 is less than , typically 1×10 17 spins / cm 3 or more and 1×10 18 spins / cm 3 less than .

[0304] In addition, in the ESR spectrum below 100K, the first signal with a g value of 2.037 or more and 2.039 or less, the second signal with a g value of 2.001 or more and 2.003 or less, and the g value of 1. The third signal of 964 or more and 1.966 or less corresponds to the signal caused by nitrogen oxides (NO , where x is greater than 0 x and 2 or less, preferably 1 or more and 2 or less). Representative examples of nitrogen oxides include nitric oxide, nitrogen dioxide, etc. That is, the first signal with a g value of 2.037 or more and 2.039 or less, the second signal with a g value of 2.001 or more and 2.003 or less, and the third signal with a g value of 1 .964 or more and 1.966 or less, the lower the total spin density of the third signal, the lower the content of nitrogen oxides contained in the oxide insulating film can be said. .964 or more and 1.966 or less, the lower the total spin density of the third signal, the lower the content of nitrogen oxides contained in the oxide insulating film can be said.

[0305] In addition, the above oxide insulating film has a nitrogen concentration measured by SIMS of 6×10 20 atoms / cm 3 or less.

[0306] The surface temperature of the film is 220°C or more and 350°C or less, and by using the PE CVD method using silane and dinitrogen monoxide to form the above oxide insulating film, a dense and high-hardness film can be formed.

[0307] The insulating film 116 is formed using an oxide insulating film containing more oxygen than oxygen satisfying the stoichiometric composition. An oxide insulating film containing more oxygen than oxygen satisfying the stoichiometric composition is added ​ Heat causes some of the oxygen to be released. Acids that contain more oxygen than is required for the stoichiometric composition The oxide insulating film had a desorption of 1.0×10 oxygen atoms in terms of oxygen atoms, as determined by TDS analysis. 19 atoms / cm 3 More than 3.0×10 20 atoms / cm 3 Acid that is greater than or equal to The surface temperature of the film in the above TDS is 100°C or higher and 700°C or higher. °C or lower, or in the range of 100°C to 500°C.

[0308] The insulating film 116 has a thickness of 30 nm to 500 nm, preferably 50 nm to 400 nm. Silicon oxide, silicon oxynitride, etc. having a thickness of 00 nm or less can be used.

[0309] In addition, it is preferable that the insulating film 116 has a small amount of defects. Typically, the insulating film 116 has a small amount of defects as determined by ESR measurement. , the spin density of the signal at g=2.001 originating from silicon dangling bonds is 1.5×10 18 spins / cm 3 Less than or even 1×10 18 spins / cm 3 Below Note that the insulating film 116 is preferably made of an oxide semiconductor material as compared with the insulating film 114. Since it is separated from the film 108 , it may have a higher defect density than the insulating film 114 .

[0310] In addition, the insulating films 114 and 116 can be made of the same material. In some cases, the interface between the insulating film 114 and the insulating film 116 cannot be clearly seen. In this embodiment, the interface between the insulating film 114 and the insulating film 116 is shown by a dashed line. In the embodiment, the two-layer structure of the insulating film 114 and the insulating film 116 has been described. It is not limited to this, and for example, it may be a single-layer structure of the insulating film 114.

[0311] The insulating film 118 contains nitrogen. Also, the insulating film 118 contains nitrogen and silicon. Also, the insulating film 118 has a function of blocking oxygen, hydrogen, water, alkali metals, alkaline earth metals, etc. By providing the insulating film 118, the diffusion of oxygen from the oxide semiconductor film 108 to the outside, the diffusion of oxygen contained in the insulating films 114 and 116 to the outside, and the entry of hydrogen, water, etc. from the outside into the oxide semiconductor film 108 can be prevented. As the insulating film 118, for example, a nitride insulating film can be used. Examples of the nitride insulating film include silicon nitride, silicon oxynitride, aluminum nitride, aluminum oxynitride, etc. Note that instead of the nitride insulating film having a blocking effect on oxygen, hydrogen, water, alkali metals, alkaline earth metals, etc., an oxide insulating film having a blocking effect on oxygen, hydrogen, water, etc. may be provided. Examples of the oxide insulating film having a blocking effect on oxygen, hydrogen, water, etc. include aluminum oxide, aluminum oxynitride, gallium oxide, gallium oxynitride, yttrium oxide, yttrium oxynitride, hafnium oxide, hafnium oxynitride, etc.

[0312] Note that various films such as the conductive film, insulating film, and oxide semiconductor film described above can be formed by a sputtering method or a PECVD method, but they may also be formed by other methods, for example, a thermal CVD (Chemical Vapor Deposition) method. Examples of the thermal CVD method include the MOCVD (Metal Organic Chemical Vapor Deposition) method and the ALD (Atomic Layer Deposition) method. The method may also be used.

[0313] Since the thermal CVD method is a film-forming method that does not use plasma, it has the advantage that defects are not generated due to plasma damage. to be.

[0314] In the thermal CVD method, the source gas and the oxidant are simultaneously fed into the chamber, and the inside of the chamber is set to atmospheric pressure or under reduced pressure, and the reaction is carried out near or on the substrate to deposit on the substrate to form a film. It may be performed. to be.

[0315] In addition, in the ALD method, the inside of the chamber is set to atmospheric pressure or under reduced pressure, and the source gas for the reaction is sequentially introduced into the chamber, and film formation may be performed by repeating the order of the gas introduction. For example, by switching each switching valve (also called a high-speed valve), two or more types of source gases are sequentially supplied to the chamber, and an inert gas (such as argon or nitrogen) is introduced simultaneously or after the first source gas so that the plurality of types of source gases do not mix, and the second source gas is introduced. When an inert gas is introduced simultaneously, the inert gas becomes a carrier gas, and an inert gas may also be introduced simultaneously when the second source gas is introduced. Also, instead of introducing an inert gas, after exhausting the first source gas by vacuum evacuation, the second source gas may be introduced. The first source gas is adsorbed on the surface of the substrate to form a first layer, and reacts with the second source gas introduced later, and the second layer is laminated on the first layer to form a thin film. By repeating this gas introduction sequence a plurality of times until the desired thickness is reached while controlling the sequence, a thin film with excellent step coverage can be formed. Since the thickness of the thin film can be adjusted by the number of times the gas introduction sequence is repeated, precise film thickness adjustment is possible, and fine chamber, and the film formation may be performed by repeating the order of the gas introduction. For example, by switching each switching valve (also called a high-speed valve), two or more types of source gases are sequentially supplied to the chamber, and an inert gas (such as argon or nitrogen) is introduced simultaneously or after the first source gas so that the plurality of types of source gases do not mix, and the second source gas is introduced. When an inert gas is introduced simultaneously, the inert gas becomes a carrier gas, and an inert gas may also be introduced simultaneously when the second source gas is introduced. Also, instead of introducing an inert gas, after exhausting the first source gas by vacuum evacuation, the second source gas may be introduced. The first source gas is adsorbed on the surface of the substrate to form a first layer, and reacts with the second source gas introduced later, and the second layer is laminated on the first layer to form a thin film. By repeating this gas introduction sequence a plurality of times until the desired thickness is reached while controlling the sequence, a thin film with excellent step coverage can be formed. Since the thickness of the thin film can be adjusted by the number of times the gas introduction sequence is repeated, precise film thickness adjustment is possible, and fine source gases are sequentially supplied to the chamber, and an inert gas (such as argon or nitrogen) is introduced simultaneously or after the first source gas so that the plurality of types of source gases do not mix, and the second source gas is introduced. When an inert gas is introduced simultaneously, the inert gas becomes a carrier gas, and an inert gas may also be introduced simultaneously when the second source gas is introduced. Also, instead of introducing an inert gas, after exhausting the first source gas by vacuum evacuation, the second source gas may be introduced. The first source gas is adsorbed on the surface of the substrate to form a first layer, and reacts with the second source gas introduced later, and the second layer is laminated on the first layer to form a thin film. By repeating this gas introduction sequence a plurality of times until the desired thickness is reached while controlling the sequence, a thin film with excellent step coverage can be formed. Since the thickness of the thin film can be adjusted by the number of times the gas introduction sequence is repeated, precise film thickness adjustment is possible, and fine source gas and an inert gas (such as argon or nitrogen) are introduced simultaneously or after the first source gas so that the plurality of types of source gases do not mix, and the second source gas is introduced. When an inert gas is introduced simultaneously, the inert gas becomes a carrier gas, and an inert gas may also be introduced simultaneously when the second source gas is introduced. Also, instead of introducing an inert gas, after exhausting the first source gas by vacuum evacuation, the second source gas may be introduced. The first source gas is adsorbed on the surface of the substrate to form a first layer, and reacts with the second source gas introduced later, and the second layer is laminated on the first layer to form a thin film. By repeating this gas introduction sequence a plurality of times until the desired thickness is reached while controlling the sequence, a thin film with excellent step coverage can be formed. Since the thickness of the thin film can be adjusted by the number of times the gas introduction sequence is repeated, precise film thickness adjustment is possible, and fine source gas and an inert gas (such as argon or nitrogen) are introduced simultaneously or after the first source gas so that the plurality of types of source gases do not mix, and the second source gas is introduced. When an inert gas is introduced simultaneously, the inert gas becomes a carrier gas, and an inert gas may also be introduced simultaneously when the second source gas is introduced. Also, instead of introducing an inert gas, after exhausting the first source gas by vacuum evacuation, the second source gas may be introduced. The first source gas is adsorbed on the surface of the substrate to form a first layer, and reacts with the second source gas introduced later, and the second layer is laminated on the first layer to form a thin film. By repeating this gas introduction sequence a plurality of times until the desired thickness is reached while controlling the sequence, a thin film with excellent step coverage can be formed. Since the thickness of the thin film can be adjusted by the number of times the gas introduction sequence is repeated, precise film thickness adjustment is possible, and fine source gas and an inert gas (such as argon or nitrogen) are introduced simultaneously or after the first source gas so that the plurality of types of source gases do not mix, and the second source gas is introduced. When an inert gas is introduced simultaneously, the inert gas becomes a carrier gas, and an inert gas may also be introduced simultaneously when the second source gas is introduced. Also, instead of introducing an inert gas, after exhausting the first source gas by vacuum evacuation, the second source gas may be introduced. The first source gas is adsorbed on the surface of the substrate to form a first layer, and reacts with the second source gas introduced later, and the second layer is laminated on the first layer to form a thin film. By repeating this gas introduction sequence a plurality of times until the desired thickness is reached while controlling the sequence, a thin film with excellent step coverage can be formed. Since the thickness of the thin film can be adjusted by the number of times the gas introduction sequence is repeated, precise film thickness adjustment is possible, and fine source gas and an inert gas (such as argon or nitrogen) are introduced simultaneously or after the first source gas so that the plurality of types of source gases do not mix, and the second source gas is introduced. When an inert gas is introduced simultaneously, the inert gas becomes a carrier gas, and an inert gas may also be introduced simultaneously when the second source gas is introduced. Also, instead of introducing an inert gas, after exhausting the first source gas by vacuum evacuation, the second source gas may be introduced. The first source gas is adsorbed on the surface of the substrate to form a first layer, and reacts with the second source gas introduced later, and the second layer is laminated on the first layer to form a thin film. By repeating this gas introduction sequence a plurality of times until the desired thickness is reached while controlling the sequence, a thin film with excellent step coverage can be formed. Since the thickness of the thin film can be adjusted by the number of times the gas introduction sequence is repeated, precise film thickness adjustment is possible, and fine source gas and an inert gas (such as argon or nitrogen) are introduced simultaneously or after the first source gas so that the plurality of types of source gases do not mix, and the second source gas is introduced. When an inert gas is introduced simultaneously, the inert gas becomes a carrier gas, and an inert gas may also be introduced simultaneously when the second source gas is introduced. Also, instead of introducing an inert gas, after exhausting the first source gas by vacuum evacuation, the second source gas may be introduced. The first source gas is adsorbed on the surface of the substrate to form a first layer, and reacts with the second source gas introduced later, and the second layer is laminated on the first layer to form a thin film. By repeating this gas introduction sequence a plurality of times until the desired thickness is reached while controlling the sequence, a thin film with excellent step coverage can be formed. Since the thickness of the thin film can be adjusted by the number of times the gas introduction sequence is repeated, precise film thickness adjustment is possible, and fine source gas and an inert gas (such as argon or nitrogen) are introduced simultaneously or after the first source gas so that the plurality of types of source gases do not mix, and the second source gas is introduced. When an inert gas is introduced simultaneously, the inert gas becomes a carrier gas, and an inert gas may also be introduced simultaneously when the second source gas is introduced. Also, instead of introducing an inert gas, after exhausting the first source gas by vacuum evacuation, the second source gas may be introduced. The first source gas is adsorbed on the surface of the substrate to form a first layer, and reacts with the second source gas introduced later, and the second layer is laminated on the first layer to form a thin film. By repeating this gas introduction sequence a plurality of times until the desired thickness is reached while controlling the sequence, a thin film with excellent step coverage can be formed. Since the thickness of the thin film can be adjusted by the number of times the gas introduction sequence is repeated, precise film thickness adjustment is possible, and fine source gas and an inert gas (such as argon or nitrogen) are introduced simultaneously or after the first source gas so that the plurality of types of source gases do not mix, and the second source gas is introduced. When an inert gas is introduced simultaneously, the inert gas becomes a carrier gas, and an inert gas may also be introduced simultaneously when the second source gas is introduced. Also, instead of introducing an inert gas, after exhausting the first source gas by vacuum evacuation, the second source gas may be introduced. The first source gas is adsorbed on the surface of the substrate to form a first layer, and reacts with the second source gas introduced later, and the second layer is laminated on the first layer to form a thin film. By repeating this gas introduction sequence a plurality of times until the desired thickness is reached while controlling the sequence, a thin film with excellent step coverage can be formed. Since the thickness of the thin film can be adjusted by the number of times the gas introduction sequence is repeated, precise film thickness adjustment is possible, and fine source gas and an inert gas (such as argon or nitrogen) are introduced simultaneously or after the first source gas so that the plurality of types of source gases do not mix, and the second source gas is introduced. When an inert gas is introduced simultaneously, the inert gas becomes a carrier gas, and an inert gas may also be introduced simultaneously when the second source gas is introduced. Also, instead of introducing an inert gas, after exhausting the first source gas by vacuum evacuation, the second source gas may be introduced. The first source gas is adsorbed on the surface of the substrate to form a first layer, and reacts with the second source gas introduced later, and the second layer is laminated on the first layer to form a thin film. By repeating this gas introduction sequence a plurality of times until the desired thickness is reached while controlling the sequence, a thin film with excellent step coverage can be formed. Since the thickness of the thin film can be adjusted by the number of times the gas introduction sequence is repeated, precise film thickness adjustment is possible, and fine source gas and an inert gas (such as argon or nitrogen) are introduced simultaneously or after the first source gas so that the plurality of types of source gases do not mix, and the second source gas is introduced. When an inert gas is introduced simultaneously, the inert gas becomes a carrier gas, and an inert gas may also be introduced simultaneously when the second source gas is introduced. Also, instead of introducing an inert gas, after exhausting the first source gas by vacuum evacuation, the second source gas may be introduced. The first source gas is adsorbed on the surface of the substrate to form a first layer, and reacts with the second source gas introduced later, and the second layer is laminated on the first layer to form a thin film. By repeating this gas introduction sequence a plurality of times until the desired thickness is reached while controlling the sequence, a thin film with excellent step coverage can be formed. Since the thickness of the thin film can be adjusted by the number of times the gas introduction sequence is repeated, precise film thickness adjustment is possible, and fine source gas and an inert gas (such as argon or nitrogen) are introduced simultaneously or after the first source gas so that the plurality of types of source gases do not mix, and the second source gas is introduced. When an inert gas is introduced simultaneously, the inert gas becomes a carrier gas, and an inert gas may also be introduced simultaneously when the second source gas is introduced. Also, instead of introducing an inert gas, after exhausting the first source gas by vacuum evacuation, the second source gas may be introduced. The first source gas is adsorbed on the surface of the substrate to form a first layer, and reacts with the second source gas introduced later, and the second layer is laminated on the first layer to form a thin film. By repeating this gas introduction sequence a plurality of times until the desired thickness is reached while controlling the sequence, a thin film with excellent step coverage can be formed. Since the thickness of the thin film can be adjusted by the number of times the gas introduction sequence is repeated, precise film thickness adjustment is possible, and fine This is suitable for fabricating FETs with high

[0316] Thermal CVD methods such as MOCVD and ALD can be used to form the conductive film, insulating film, and oxide semiconductor of the above-mentioned embodiment. It is possible to form various films such as conductor films and metal oxide films. For example, In-Ga-ZnO When forming a film, trimethylindium, trimethylgallium, and dimethylzinc are used. The chemical formula for trimethylindium is In(CH3)3. The chemical formula for trimethylgallium is Ga(CH3)3. The chemical formula for dimethylzinc is , Zn(CH3)2. In addition, the combination is not limited to these, and trimethylgallium is also usable. Triethylgallium (chemical formula Ga(C2H5)3) can be used instead of gallium. Diethylzinc (chemical formula Zn(C2H5)2) can be used instead of diethylzinc.

[0317] For example, when forming a hafnium oxide film using a deposition system that uses ALD, the solvent and Liquids containing hafnium precursor compounds (hafnium alkoxides, tetrakisdimethylamine, etc.) The raw material gas is vaporized hafnium amide (TDMAH, etc.) and oxidized Two types of gases are used: tetrakisdimethylamide hafnium (TDA) and ozone (O3). The chemical formula for nium is Hf[N(CH3)2]4. Other materials include tetrahydrofuran. Examples include kis(ethylmethylamido)hafnium.

[0318] For example, when forming an aluminum oxide film using a film forming apparatus that uses ALD, a solvent and a liquid containing an aluminum precursor compound (e.g., trimethylaluminum (TMA)) Two types of gases are used: the oxidized raw gas and H2O as an oxidizing agent. The chemical formula of aluminum is Al(CH3)3. As other material liquids, there are tris(dimethylamide)aluminum, triisobutylaluminum, aluminum tris(2,2,6,6-tetramethyl-3,5-heptanedionate), etc. When forming a silicon oxide film by a film-forming apparatus using ALD, for example, hexachlorosilane is adsorbed on the film-forming surface, chlorine contained in the adsorbate is removed, and radicals of an oxidizing gas (O2, nitrous oxide) are supplied to react with the adsorbate. When forming a tungsten film by a film-forming apparatus using ALD, for example, WF6 gas and B2H6 gas are sequentially introduced repeatedly to form an initial tungsten film, and then WF6 gas and H2 gas are introduced to form a tungsten film. Instead of B2H6 gas, SiH4 gas may be used.

[0319] For example, when forming an indium gallium zinc oxide film, an oxide semiconductor film, by a film-forming apparatus using ALD, In(CH3)3 gas and O3 gas are sequentially introduced repeatedly to form an In-O layer, and then Ga(CH3)3 gas and O3 gas are used to form a GaO layer, and then ZnO gas and O3 gas are used to form a ZnO layer. The order of these layers is not limited to this example. Also, these gases may be mixed to form a mixed compound layer such as an In-Ga-O layer, an In-Zn-O layer, or a Ga-Zn-O layer. Instead of O3 gas, H2O gas obtained by bubbling with an inert gas such as Ar may be used, but it is preferable to use O3 gas that does not contain H. Also, instead of In(CH3)3 gas, In(C2 When forming a silicon oxide film by a film-forming apparatus using ALD, for example, hexachlorosilane is adsorbed on the film-forming surface, chlorine contained in the adsorbate is removed, and radicals of an oxidizing gas (O2, nitrous oxide) are supplied to react with the adsorbate. When forming a tungsten film by a film-forming apparatus using ALD, for example, WF6 gas and B2H6 gas are sequentially introduced repeatedly to form an initial tungsten film, and then WF6 gas and H2 gas are introduced to form a tungsten film. Instead of B2H6 gas, SiH4 gas may be used.

[0320] For example, when forming a tungsten film by a film-forming apparatus using ALD, WF6 gas and B2H6 gas are sequentially introduced repeatedly to form an initial tungsten film, and then WF6 gas and H2 gas are introduced to form a tungsten film. Instead of B2H6 gas, SiH4 gas may be used. For example, when forming a tungsten film by a film-forming apparatus using ALD, WF6 gas and B2H6 gas are sequentially introduced repeatedly to form an initial tungsten film, and then WF6 gas and H2 gas are introduced to form a tungsten film. Instead of B2H6 gas, SiH4 gas may be used. For example, when forming a tungsten film by a film-forming apparatus using ALD, WF6 gas and B2H6 gas are sequentially introduced repeatedly to form an initial tungsten film, and then WF6 gas and H2 gas are introduced to form a tungsten film. Instead of B2H6 gas, SiH4 gas may be used. For example, when forming a tungsten film by a film-forming apparatus using ALD, WF6 gas and B2H6 gas are sequentially introduced repeatedly to form an initial tungsten film, and then WF6 gas and H2 gas are introduced to form a tungsten film. Instead of B2H6 gas, SiH4 gas may be used.

[0321] For example, when forming an oxide semiconductor film, such as an In-Ga-ZnO film, by a film-forming apparatus using ALD, In(CH3)3 gas and O3 gas are sequentially introduced repeatedly to form an In-O layer, and then Ga(CH3)3 gas and O3 gas are used to form a GaO layer, and then ZnO gas and O3 gas are used to form a ZnO layer. The order of these layers is not limited to this example. Also, these gases may be mixed to form a mixed compound layer such as an In-Ga-O layer, an In-Zn-O layer, or a Ga-Zn-O layer. Instead of O3 gas, H2O gas obtained by bubbling with an inert gas such as Ar may be used, but it is preferable to use O3 gas that does not contain H. Also, instead of In(CH3)3 gas, In(C2 For example, when forming an oxide semiconductor film, such as an In-Ga-ZnO film, by a film-forming apparatus using ALD, In(CH3)3 gas and O3 gas are sequentially introduced repeatedly to form an In-O layer, and then Ga(CH3)3 gas and O3 gas are used to form a GaO layer, and then ZnO gas and O3 gas are used to form a ZnO layer. The order of these layers is not limited to this example. Also, these gases may be mixed to form a mixed compound layer such as an In-Ga-O layer, an In-Zn-O layer, or a Ga-Zn-O layer. Instead of O3 gas, H2O gas obtained by bubbling with an inert gas such as Ar may be used, but it is preferable to use O3 gas that does not contain H. Also, instead of In(CH3)3 gas, In(C2 For example, when forming an oxide semiconductor film, such as an In-Ga-ZnO film, by a film-forming apparatus using ALD, In(CH3)3 gas and O3 gas are sequentially introduced repeatedly to form an In-O layer, and then Ga(CH3)3 gas and O3 gas are used to form a GaO layer, and then ZnO gas and O3 gas are used to form a ZnO layer. The order of these layers is not limited to this example. Also, these gases may be mixed to form a mixed compound layer such as an In-Ga-O layer, an In-Zn-O layer, or a Ga-Zn-O layer. Instead of O3 gas, H2O gas obtained by bubbling with an inert gas such as Ar may be used, but it is preferable to use O3 gas that does not contain H. Also, instead of In(CH3)3 gas, In(C2 For example, when forming an oxide semiconductor film, such as an In-Ga-ZnO film, by a film-forming apparatus using ALD, In(CH3)3 gas and O3 gas are sequentially introduced repeatedly to form an In-O layer, and then Ga(CH3)3 gas and O3 gas are used to form a GaO layer, and then ZnO gas and O3 gas are used to form a ZnO layer. The order of these layers is not limited to this example. Also, these gases may be mixed to form a mixed compound layer such as an In-Ga-O layer, an In-Zn-O layer, or a Ga-Zn-O layer. Instead of O3 gas, H2O gas obtained by bubbling with an inert gas such as Ar may be used, but it is preferable to use O3 gas that does not contain H. Also, instead of In(CH3)3 gas, In(C2 For example, when forming an oxide semiconductor film, such as an In-Ga-ZnO film, by a film-forming apparatus using ALD, In(CH3)3 gas and O3 gas are sequentially introduced repeatedly to form an In-O layer, and then Ga(CH3)3 gas and O3 gas are used to form a GaO layer, and then ZnO gas and O3 gas are used to form a ZnO layer. The order of these layers is not limited to this example. Also, these gases may be mixed to form a mixed compound layer such as an In-Ga-O layer, an In-Zn-O layer, or a Ga-Zn-O layer. Instead of O3 gas, H2O gas obtained by bubbling with an inert gas such as Ar may be used, but it is preferable to use O3 gas that does not contain H. Also, instead of In(CH3)3 gas, In(C2 For example, when forming an oxide semiconductor film, such as an In-Ga-ZnO film, by a film-forming apparatus using ALD, In(CH3)3 gas and O3 gas are sequentially introduced repeatedly to form an In-O layer, and then Ga(CH3)3 gas and O3 gas are used to form a GaO layer, and then ZnO gas and O3 gas are used to form a ZnO layer. The order of these layers is not limited to this example. Also, these gases may be mixed to form a mixed compound layer such as an In-Ga-O layer, an In-Zn-O layer, or a Ga-Zn-O layer. Instead of O3 gas, H2O gas obtained by bubbling with an inert gas such as Ar may be used, but it is preferable to use O3 gas that does not contain H. Also, instead of In(CH3)3 gas, In(C2 For example, when forming an oxide semiconductor film, such as an In-Ga-ZnO film, by a film-forming apparatus using ALD, In(CH3)3 gas and O3 gas are sequentially introduced repeatedly to form an In-O layer, and then Ga(CH3)3 gas and O3 gas are used to form a GaO layer, and then ZnO gas and O3 gas are used to form a ZnO layer. The order of these layers is not limited to this example. Also, these gases may be mixed to form a mixed compound layer such as an In-Ga-O layer, an In-Zn-O layer, or a Ga-Zn-O layer. Instead of O3 gas, H2O gas obtained by bubbling with an inert gas such as Ar may be used, but it is preferable to use O3 gas that does not contain H. Also, instead of In(CH3)3 gas, In(C2 For example, when forming an oxide semiconductor film, such as an In-Ga-ZnO film, by a film-forming apparatus using ALD, In(CH3)3 gas and O3 gas are sequentially introduced repeatedly to form an In-O layer, and then Ga(CH3)3 gas and O3 gas are used to form a GaO layer, and then ZnO gas and O3 gas are used to form a ZnO layer. The order of these layers is not limited to this example. Also, these gases may be mixed to form a mixed compound layer such as an In-Ga-O layer, an In-Zn-O layer, or a Ga-Zn-O layer. Instead of O3 gas, H2O gas obtained by bubbling with an inert gas such as Ar may be used, but it is preferable to use O3 gas that does not contain H. Also, instead of In(CH3)3 gas, In(C2 H5)3 gas may be used. Further, instead of Ga(CH3)3 gas, Ga(C2H5) 3 gas may be used. Further, Zn(CH3)2 gas may be used.

[0322] Note that this embodiment can be appropriately combined with other embodiments described in this specification .

[0323] (Embodiment 4) In this embodiment, the configuration of the transistor that can be used for the touch panel according to one aspect of the present invention will be described with reference to FIG. 12.

[0324] <Configuration example of semiconductor device> FIG. 12(A) is a top view of the transistor 100, and FIG. 12(B) corresponds to a cross-sectional view of the cut surface between the cut lines X1-X2 shown in FIG. 12(A). FIG. 12(C) corresponds to a cross-sectional view of the cut surface between the cut lines Y1-Y2 shown in FIG. 12(A ). Note that in FIG. 12(A), in order to avoid complexity, some of the components of the transistor 100 (such as the insulating film that functions as a gate insulating film) are omitted from the illustration. Also, the direction of the cut line X1-X2 may be referred to as the channel length direction, and the direction of the cut line Y1-Y2 may be referred to as the channel width direction. Note that in the top view of the transistor, as in FIG. 12(A) in the following drawings, some of the components may be omitted from the illustration.

[0325]

[0326] Note that the transistor 100 can be used for the touch panel described in Embodiment 1. .

[0326] For example, when the transistor 100 is used as the transistor MDB, the substrate 102 is the laminated material of the base material 7 10 and the insulating film 701, the conductive film 104 is the conductive film 704, and the insulating film 106 and The laminated film of the calling insulating film 107 is read as the laminated film 706, the oxide semiconductor film 108 is read as the semiconductor film 718, the conductive film 112a is read as the conductive film 712A, the conductive film 112b is read as the conductive film 712B, the insulating film 114 and the laminated film of the insulating film 116 is read as the insulating film 721A, the insulating film 118 is read as the insulating film 721B, the conductive film 120b is read as the conductive film 724B, respectively.

[0327] The transistor 100 includes a conductive film 104 that functions as a first gate electrode on a substrate 102, an insulating film 106 on the substrate 102 and the conductive film 104, an insulating film 107 on the insulating film 106, an oxide semiconductor film 108 on the insulating film 107, a conductive film 112a that functions as a source electrode electrically connected to the oxide semiconductor film 108, a conductive film 112b that functions as a drain electrode electrically connected to the oxide semiconductor film 108, insulating films 114 and 116 on the oxide semiconductor film 108, the conductive films 112 a, and 112b, a conductive film 120a provided on the insulating film 116 and electrically connected to the conductive film 112b, a conductive film 120b on the insulating film 116, and an insulating film 118 on the insulating film 116 and the conductive films 120a and 120b.

[0328] In addition, in the transistor 100, the insulating films 106 and 107 function as the first gate insulating film of the transistor 100, the insulating films 114 and 116 function as the second gate insulating film of the transistor 100, and the insulating film 118 functions as the protection insulating film of the transistor 100. In this specification and the like, the insulating films 106 and 107 are referred to as the first insulating film, the insulating films 114 and 116 are referred to as the second insulating film, and the insulating film 118 is referred to as the third insulating film, respectively. There may be cases where they are respectively called.

[0329] Note that the conductive film 120b can be used as a second gate electrode of the transistor 100.

[0330] In addition, when the transistor 100 is used in a pixel portion of a display panel, the conductive film 120a is It can be used for electrodes of elements, etc.

[0331] In addition, the oxide semiconductor film 108 is formed by oxidizing the conductive film 104 functioning as the first gate electrode. and an oxide semiconductor film 108c on the oxide semiconductor film 108b. The oxide semiconductor film 108b and the oxide semiconductor film 108c are each composed of In and M (M is A). l, Ga, Y, or Sn) and Zn.

[0332] For example, in the oxide semiconductor film 108b, a region in which the atomic ratio of In is larger than the atomic ratio of M is The oxide semiconductor film 108c preferably has the following structure: It is preferable that the number of In atoms is smaller than that of the In-type semiconductor layer.

[0333] The oxide semiconductor film 108b has a region in which the atomic ratio of In is higher than the atomic ratio of M. , the field effect mobility (sometimes simply referred to as mobility, or μFE) of the transistor 100 Specifically, the field effect mobility of the transistor 100 can be increased to 10 cm 2 / Vs, and more preferably the field effect mobility of the transistor 100 is greater than 30 cm 2 / Vs can be exceeded.

[0334] For example, the above-mentioned high field effect mobility transistor is connected to a gate driver that generates a gate signal. A demultiplexer connected to the output terminal of a shift register of a gate driver (especially By using it for a (also referred to as a narrow frame) semiconductor device or display device with a narrow frame width it is possible to provide.

[0335] On the other hand, when the oxide semiconductor film 108b has a region where the atomic ratio of In is larger than the atomic ratio of M the electrical characteristics of the transistor 100 tend to fluctuate during light irradiation. However, in the semiconductor device according to one aspect of the present invention, an oxide semiconductor film 1 08c is formed on the oxide semiconductor film 108b. Further, since the oxide semiconductor film 108c has a region where the atomic ratio of In is smaller than that of the oxide semiconductor film 108b, Eg becomes larger than that of the oxide semiconductor film 108b Therefore, the oxide semiconductor film 108 having a stacked structure of the oxide semiconductor film 108b and the oxide semiconductor film 108c can enhance the resistance to the photo negative bias stress test

[0336] In addition, impurities such as hydrogen or moisture mixed into the channel region of the oxide semiconductor film 108, particularly the oxide semiconductor film 108b, are a problem because they affect the transistor characteristics. Therefore, in the channel region of the oxide semiconductor film 108b, it is preferable that there are fewer impurities such as hydrogen or moisture Further, oxygen deficiency formed in the channel region of the oxide semiconductor film 108b is a problem because it affects the transistor characteristics. For example, when oxygen deficiency is formed in the channel region of the oxide semiconductor film 108b, hydrogen binds to the oxygen deficiency to become a carrier supply source When a carrier supply source is generated in the channel region of the oxide semiconductor film 108b, fluctuations in the electrical characteristics of the transistor 100 having the oxide semiconductor film 108b occur, typically a shift in the threshold voltage Therefore, in the channel of the oxide semiconductor film 108b ​​​​​​​​In the field, it is more preferable that the oxygen deficiency is less.

[0337] Therefore, in one aspect of the present invention, the insulating film in contact with the oxide semiconductor film 108, specifically the insulating film 107 formed below the oxide semiconductor film 108, and the insulating films 114 and 116 formed above the oxide semiconductor film 108 are configured to contain excess oxygen. The insulating film 107 and the insulating films 114 and 116 transfer oxygen or excess oxygen to the oxide semiconductor film 108 so that it is possible to reduce the oxygen deficiency in the oxide semiconductor film. Therefore, the electrical characteristics of the transistor 100, particularly the variation of the transistor 100 under light irradiation, can be suppressed.

[0338] Also, in one aspect of the present invention, in order to contain excess oxygen in the insulating film 107 and the insulating films 114 and 116, a manufacturing method with no increase or extremely little increase in the manufacturing process is used. Therefore, it is possible to increase the yield of the transistor 100.

[0339] Specifically, in the step of forming the oxide semiconductor film 108b, by using the sputtering method and forming the oxide semiconductor film 108b in an atmosphere containing oxygen gas, oxygen or excess oxygen is added to the insulating film 107 which becomes the surface to be formed of the oxide semiconductor film 108b.

[0340] Also, in the step of forming the conductive films 120a and 120b, by using the sputtering method and forming the conductive films 120a and 120b in an atmosphere containing oxygen gas, oxygen or excess oxygen is added to the insulating film 116 which becomes the surface to be formed of the conductive films 120a and 120b. Note that when adding oxygen or excess oxygen to the insulating film 116, the insulating film 1 located below the insulating film 116 Oxygen or excess oxygen may be added to the oxide semiconductor film 14 and the oxide semiconductor film 108 in some cases.

[0341] <Oxide conductor> Next, the oxide conductor will be described. The conductive films 120a and 120b serve as protective films that suppress the release of oxygen from the insulating films 114 and 116. The conductive films 120a and 120b function as a film in the step of forming the insulating film 118. Before the step of forming the insulating film 118, the insulating film 118 functions as a semiconductor. The conductive films 120a and 120b function as conductors.

[0342] In order for the conductive films 120a and 120b to function as conductors, b, and hydrogen is added to the oxygen vacancy from the insulating film 118. As a result, the conductive films 120a and 120b become highly conductive. The conductive films 120a and 120b that have been made conductive are each called oxide conductors. In general, oxide semiconductors have a large energy gap and are therefore highly resistant to visible light. On the other hand, an oxide conductor is an oxide semiconductor having a donor level near the conduction band. Therefore, the oxide conductor is less affected by absorption due to donor levels and The light-transmitting property of the oxide semiconductor is comparable to that of an oxide semiconductor.

[0343] <Components of Semiconductor Device> The components included in the semiconductor device of this embodiment will be described in detail below.

[0344] The following materials may be the same as those described in the third embodiment. can.

[0345] It is possible to use the material that can be used for the substrate 102 described in Embodiment 3 for the substrate 102. In addition, it is possible to use the material that can be used for the insulating films 106 and 107 described in Embodiment 3 for the insulating films 106 and 107.

[0346] In addition, the material that can be used for the conductive film functioning as the gate electrode, source electrode, and drain electrode described in Embodiment 3 can be used for the conductive film functioning as the first gate electrode, source electrode, and drain electrode.

[0347] 《Oxide Semiconductor Film》 As the oxide semiconductor film 108, the materials shown above can be used.

[0348] When the oxide semiconductor film 108b is an In-M-Zn oxide, the atomic ratio of the metal elements of the sputtering target used for forming the In-M-Zn oxide preferably satisfies In>M. As such an atomic ratio of the metal elements of the sputtering target, In:M:Zn = 2:1:3, In:M:Zn = 3:1:2, In:M:Zn = 4:2:4, etc. can be mentioned.

[0349] In addition, when the oxide semiconductor film 108c is an In-M-Zn oxide, the atomic ratio of the metal elements of the sputtering target used for forming the In-M-Zn oxide preferably satisfies In≤M. As such an atomic ratio of the metal elements of the sputtering target, In:M:Zn = 1:1:1, In:M:Zn = 1:1:1.2, In:M:Zn = 1:3:2, In:M:Zn = 1:3:4, In:M:Zn = 1:3:6, etc. can be mentioned.

[0350] In addition, when the oxide semiconductor film 108b and the oxide semiconductor film 108c are an In-M-Zn oxide, In this case, the sputtering target is a target containing polycrystalline In-M-Zn oxide. It is preferable to use a target containing polycrystalline In-M-Zn oxide. Therefore, the oxide semiconductor film 108b and the oxide semiconductor film 108c having crystallinity can be easily formed. Note that the atomic ratio of the oxide semiconductor film 108b to the oxide semiconductor film 108c to be formed is The error is the atomic ratio of the metal elements contained in the sputtering target. For example, the oxide semiconductor film 108b is sputtered. When the atomic ratio of In:Ga:Zn=4:2:4.1 is used as the target, the film is formed. When the atomic ratio of the oxide semiconductor film 108b is approximately In:Ga:Zn=4:2:3, There is a match.

[0351] The oxide semiconductor film 108 has an energy gap of 2 eV or more, preferably 2.5 eV or more. V or more, and more preferably 3 eV or more. By using a compound semiconductor, the off-state current of the transistor 100 can be reduced. In addition, the oxide semiconductor film 108b has an energy gap of 2 eV or more, preferably 2 eV or more. The oxide semiconductor film 108c has an energy It is preferable to use an oxide semiconductor film having a gap of 2.5 eV or more and 3.5 eV or less. In addition, the energy gap of the oxide semiconductor film 108c is larger than that of the oxide semiconductor film 108b. It is preferable to do so.

[0352] The oxide semiconductor film 108b and the oxide semiconductor film 108c each have a thickness of 3 nm. 200 nm or less, preferably 3 nm or more and 100 nm or less, more preferably 3 nm or more and 50 nm or less.

[0353] In addition, as the oxide semiconductor film 108c, an oxide semiconductor film with a low carrier density is used. For example, the second oxide semiconductor film 108c has a carrier density of 1×10 17 per cm 3 or less , preferably 1×10 15 per cm 3 or less, more preferably 1×10 13 per cm 3 or less , still more preferably 1×10 11 per cm 3 or less.

[0354] Note that the present invention is not limited to these, and an appropriate composition may be used according to the required semiconductor characteristics and electrical characteristics (field effect mobility, threshold voltage, etc.) of the transistor. Further, in order to obtain the required semiconductor characteristics of the transistor, the carrier density, impurity concentration, defect density, atomic number ratio of metal element to oxygen, atomic spacing distance, density, etc. of the oxide semiconductor film 108b and the oxide semiconductor film 108c are preferably made appropriate.

[0355] Note that as the oxide semiconductor film 108b and the oxide semiconductor film 108c, an oxide semiconductor film with a low impurity concentration and a low defect level density is preferably used to fabricate a transistor having more excellent electrical characteristics . Here, a low impurity concentration and a low defect level density (less oxygen deficiency) are referred to as high-purity intrinsic or substantially high-purity intrinsic. An oxide semiconductor film that is high-purity intrinsic or substantially high-purity intrinsic has few carrier generation sources , and thus the carrier density can be lowered. Therefore, a channel is formed in the oxide semiconductor film. ​​ The transistors in which the regions are formed rarely have electrical characteristics (also called normally-on) in which the threshold voltage becomes negative. In addition, since the oxide semiconductor film having high-purity intrinsic or substantially high-purity intrinsic properties has a low density of defect levels, the trap level density may also be low. In addition, the oxide semiconductor film having high-purity intrinsic or substantially high-purity intrinsic properties has an extremely small off-current, and even in an element having a channel width of 1×10 μm and a channel length L of 10 μm, when the voltage between the source electrode and the drain electrode (drain voltage) is in the range of 1 V to 10 V, the off-current is below the measurement limit of the semiconductor parameter analyzer, that is, 1×10 A or less. 6 μm and a channel length L of 10 μm, even when the voltage between the source electrode and the drain electrode (drain voltage) is in the range of 1 V to 10 V, the off-current is below the measurement limit of the semiconductor parameter analyzer, that is, 1×10 μm and a channel length L of 10 μm, even when the voltage between the source electrode and the drain electrode (drain voltage) is in the range of 1 V to 10 V, the off-current is below the measurement limit of the semiconductor parameter analyzer, that is, 1×10 A or less. -13 A or less. Such characteristics can be obtained.

[0356] Therefore, the transistors in which the channel regions are formed in the above-described high-purity intrinsic or substantially high-purity intrinsic oxide semiconductor film can be transistors with small fluctuations in electrical characteristics and high reliability. Note that the charges trapped in the trap levels of the oxide semiconductor film may take a long time to disappear and may behave like fixed charges. Therefore, the transistors in which the channel regions are formed in the oxide semiconductor film having a high trap level density may have unstable electrical characteristics. Examples of the impurities include hydrogen, nitrogen, alkali metals, or alkaline earth metals. Therefore, the transistors in which the channel regions are formed in the above-described high-purity intrinsic or substantially high-purity intrinsic oxide semiconductor film can be transistors with small fluctuations in electrical characteristics and high reliability. Note that the charges trapped in the trap levels of the oxide semiconductor film may take a long time to disappear and may behave like fixed charges. Therefore, the transistors in which the channel regions are formed in the oxide semiconductor film having a high trap level density may have unstable electrical characteristics. Examples of the impurities include hydrogen, nitrogen, alkali metals, or alkaline earth metals. Therefore, the transistors in which the channel regions are formed in the above-described high-purity intrinsic or substantially high-purity intrinsic oxide semiconductor film can be transistors with small fluctuations in electrical characteristics and high reliability. Note that the charges trapped in the trap levels of the oxide semiconductor film may take a long time to disappear and may behave like fixed charges. Therefore, the transistors in which the channel regions are formed in the oxide semiconductor film having a high trap level density may have unstable electrical characteristics. Examples of the impurities include hydrogen, nitrogen, alkali metals, or alkaline earth metals. Therefore, the transistors in which the channel regions are formed in the above-described high-purity intrinsic or substantially high-purity intrinsic oxide semiconductor film can be transistors with small fluctuations in electrical characteristics and high reliability. Note that the charges trapped in the trap levels of the oxide semiconductor film may take a long time to disappear and may behave like fixed charges. Therefore, the transistors in which the channel regions are formed in the oxide semiconductor film having a high trap level density may have unstable electrical characteristics. Examples of the impurities include hydrogen, nitrogen, alkali metals, or alkaline earth metals. Therefore, the transistors in which the channel regions are formed in the above-described high-purity intrinsic or substantially high-purity intrinsic oxide semiconductor film can be transistors with small fluctuations in electrical characteristics and high reliability. Note that the charges trapped in the trap levels of the oxide semiconductor film may take a long time to disappear and may behave like fixed charges. Therefore, the transistors in which the channel regions are formed in the oxide semiconductor film having a high trap level density may have unstable electrical characteristics. Examples of the impurities include hydrogen, nitrogen, alkali metals, or alkaline earth metals. Therefore, the transistors in which the channel regions are formed in the above-described high-purity intrinsic or substantially high-purity intrinsic oxide semiconductor film can be transistors with small fluctuations in electrical characteristics and high reliability. Note that the charges trapped in the trap levels of the oxide semiconductor film may take a long time to disappear and may behave like fixed charges. Therefore, the transistors in which the channel regions are formed in the oxide semiconductor film having a high trap level density may have unstable electrical characteristics. Examples of the impurities include hydrogen, nitrogen, alkali metals, or alkaline earth metals. Therefore, the transistors in which the channel regions are formed in the above-described high-purity intrinsic or substantially high-purity intrinsic oxide semiconductor film can be transistors with small fluctuations in electrical characteristics and high reliability. Note that the charges trapped in the trap levels of the oxide semiconductor film may take a long time to disappear and may behave like fixed charges. Therefore, the transistors in which the channel regions are formed in the oxide semiconductor film having a high trap level density may have unstable electrical characteristics. Examples of the impurities include hydrogen, nitrogen, alkali metals, or alkaline earth metals.

[0357] The hydrogen contained in the oxide semiconductor film reacts with the oxygen that binds to the metal atoms to form water, and at the same time, oxygen vacancies are formed in the lattice from which oxygen has desorbed (or the portion from which oxygen has desorbed). When hydrogen enters the oxygen vacancies, carriers such as electrons may be generated. Also, a part of the hydrogen may be metal The hydrogen contained in the oxide semiconductor film reacts with the oxygen that binds to the metal atoms to form water, and at the same time, oxygen vacancies are formed in the lattice from which oxygen has desorbed (or the portion from which oxygen has desorbed). When hydrogen enters the oxygen vacancies, carriers such as electrons may be generated. Also, a part of the hydrogen may be metal The hydrogen contained in the oxide semiconductor film reacts with the oxygen that binds to the metal atoms to form water, and at the same time, oxygen vacancies are formed in the lattice from which oxygen has desorbed (or the portion from which oxygen has desorbed). When hydrogen enters the oxygen vacancies, carriers such as electrons may be generated. Also, a part of the hydrogen may be metal It may combine with oxygen bonded to a metal atom to generate electrons as carriers. Therefore, A transistor using an oxide semiconductor film containing hydrogen tends to have normally-on characteristics and is likely to turn on. For this reason, it is preferable that the hydrogen in the oxide semiconductor film 108 be reduced as much as possible. Specifically, in the oxide semiconductor film 108, the hydrogen concentration obtained by SIMS analysis is 2×10 20 atoms / cm 3 or less, preferably 5×10 19 atoms / cm 3 or less, more preferably 1×10 19 atoms / cm 3 or less, 5×10 18 atoms / cm 3 or less, preferably 1×10 18 atoms / cm 3 or less, more preferably 5×10 17 atoms / cm 3 or less, still more preferably 1×10 16 atoms / cm 3 or less, and so on.

[0358] Also, it is preferable that the oxide semiconductor film 108b has a region with a lower hydrogen concentration than the oxide semiconductor film 108c. By having a region with a lower hydrogen concentration in the oxide semiconductor film 108b than in the oxide semiconductor film 108c, a highly reliable semiconductor device can be obtained. When the oxide semiconductor film 108b contains silicon or carbon, which is one of the Group 14 elements, oxygen vacancies increase in the oxide semiconductor film 108b, resulting in n-type conversion. For this reason, the concentration of silicon or carbon in the oxide semiconductor film 108b and the oxide semiconductor film 108

[0359] In addition, when the oxide semiconductor film 108b contains silicon or carbon, which is one of the Group 14 elements, oxygen vacancies increase in the oxide semiconductor film 108b, resulting in n-type conversion. For this reason, the concentration of silicon or carbon in the oxide semiconductor film 108b and the oxide semiconductor film 108 ​The concentration of silicon and carbon in the vicinity of the interface with b (the concentration obtained by SIMS analysis) is 2×1 0 18 atoms / cm 3 Hereinafter, preferably 2×10 17 atoms / cm 3 or less .

[0360] Further, in the oxide semiconductor film 108b, the concentration of alkali metal or alkaline earth metal obtained by SIMS analysis is 1×10 Hereinafter, preferably 2×1 18 atoms / cm 3 or less. Alkali metals and alkaline earth metals may generate carriers when combined with the oxide semiconductor, and the off-current of the transistor may increase 0 16 atoms / cm 3 or less. Therefore, it is preferable to reduce the concentration of alkali metal or alkaline earth metal in the oxide semiconductor film 108b . When combined with the oxide semiconductor, carriers may be generated, and the off-current of the transistor may increase . Therefore, it is preferable to reduce the concentration of alkali metal or alkaline earth metal in the oxide semiconductor film 108b .

[0361] Further, when nitrogen is contained in the oxide semiconductor film 108b, electrons as carriers are generated, the carrier density increases, and it is likely to be n-type. As a result, a transistor using an oxide semiconductor film containing nitrogen is likely to have normally-on characteristics. Therefore, in the oxide semiconductor film , it is preferable that nitrogen is reduced as much as possible. For example, the nitrogen concentration obtained by SIMS analysis is 5×10 . Hereinafter, preferably 5×10 atoms / cm 18 or less 3 .

[0362] Further, the oxide semiconductor film 108b and the oxide semiconductor film 108c may each have a non-single crystal structure . The non-single crystal structure is, for example, CAAC-OS (C Axis Alig ned Crystalline Oxide Semiconductor), polycrystalline It includes a structure, a microcrystalline structure, or an amorphous structure. In the non-single crystal structure, the amorphous structure has the highest defect level density, and CAAC-OS has the lowest defect level density.

[0363] 《Insulating Film Functioning as the Second Gate Insulating Film》 The insulating films 114 and 116 function as the second gate insulating film of the transistor 100. Also, the insulating films 114 and 116 have a function of supplying oxygen to the oxide semiconductor film 108. That is, the insulating films 114 and 116 contain oxygen. Further, the insulating film 114 is an insulating film that can permeate oxygen. Note that the insulating film 114 also functions as a damage relaxation film for the oxide semiconductor film 108 when forming the later-formed insulating film 116.

[0364] For example, the insulating films 114 and 116 described in Embodiment 3 can be used as the insulating films 114 and 116.

[0365] 《Oxide Semiconductor Film Functioning as a Conductive Film and Oxide Semiconductor Film Functioning as the Second Gate Electrode》 The same material as the oxide semiconductor film 108 described above can be used for the conductive film 120a functioning as a conductive film and the conductive film 120b functioning as the second gate electrode.

[0366] That is, the conductive film 120a functioning as a conductive film and the conductive film 120b functioning as the second gate electrode have the metal elements contained in the oxide semiconductor film 108 (oxide semiconductor film 108b and oxide semiconductor film 108c). For example, the conductive film 120b functioning as the second gate electrode and the oxide semiconductor film 108 (oxide semiconductor film 108b and oxide semiconductor film 10 ​​​​​​By configuring <8c> and <8c> to have the same metal element, it becomes possible to suppress the manufacturing cost. It becomes possible.

[0367] For example, as the conductive film 120a that functions as a conductive film and the conductive film 120b that functions as the second gate electrode, in the case of an In-M-Zn oxide, the atomic ratio of the metal elements of the sputtering target used for forming the In-M-Zn oxide preferably satisfies In ≧ M. As such atomic ratios of the metal elements of the sputtering target, examples include In:M:Zn = 2:1:3, In:M:Zn = 3:1:2, In:M:Zn = 4:2:4.1. For forming the In-M-Zn oxide, the atomic ratio of the metal elements of the sputtering target used preferably satisfies In ≧ M. As such atomic ratios of the metal elements of the sputtering target, examples include In: M:Zn = 2:1:3, In:M:Zn = 3:1:2, In:M:Zn = 4:2:4.1 and the like.

[0368] Also, the structure of the conductive film 120a that functions as a conductive film and the conductive film 120b that functions as the second gate electrode can be a single-layer structure or a laminated structure of two or more layers. In addition, when the conductive films 120a and 120b have a laminated structure, it is not limited to the composition of the above sputtering target. In addition, when the conductive films 120a and 120b have a laminated structure, it is not limited to the composition of the above sputtering target. It is not limited to the composition of the above sputtering target.

[0369] 《Insulating Film That Functions as a Protective Insulating Film of a Transistor》 The insulating film 118 functions as a protective insulating film of the transistor 100.

[0370] The insulating film 118 has either one or both of hydrogen and nitrogen. Or, the insulating film 11 8 has nitrogen and silicon. Also, the insulating film 118 has a function of blocking oxygen, hydrogen, water, alkali metals, alkaline earth metals, etc. By providing the insulating film 118, it is possible to prevent the diffusion of oxygen from the oxide semiconductor film 108 to the outside, the diffusion of oxygen contained in the insulating films 114 and 116 to the outside, and the entry of hydrogen, water, etc. from the outside into the oxide semiconductor film 108. By providing the insulating film 118, it is possible to prevent the diffusion of oxygen from the oxide semiconductor film 108 to the outside, the diffusion of oxygen contained in the insulating films 114 and 116 to the outside, and the entry of hydrogen, water, etc. from the outside into the oxide semiconductor film 108. It is possible to prevent the diffusion of oxygen from the oxide semiconductor film 108 to the outside, the diffusion of oxygen contained in the insulating films 114 and 116 to the outside, and the entry of hydrogen, water, etc. from the outside into the oxide semiconductor film 108. It is possible to prevent the entry of hydrogen, water, etc. from the outside into the oxide semiconductor film 108.

[0371] Further, the insulating film 118 has a function of supplying either or both of hydrogen and nitrogen to a conductive film 120a that functions as a conductive film and a conductive film 120b that functions as a second gate electrode. In particular, as the insulating film 118, it is preferable that it contains hydrogen and has a function of supplying the hydrogen to the conductive films 120a and 120b. When hydrogen is supplied from the insulating film 118 to the conductive films 120a and 120b, the conductive films 120a and 120b have a function as conductors. As the insulating film 118, for example, a nitride insulating film can be used. Examples of the nitride insulating film include silicon nitride, silicon oxynitride, aluminum nitride, aluminum oxynitride, and the like. Note that various films such as the conductive film, insulating film, and oxide semiconductor film described above can be formed by a sputtering method or a PECVD method, but they may also be formed by other methods, for example, a thermal CVD (Chemical Vapor Deposition) method. Examples of the thermal CVD method include the MOCVD (Metal Organic Chemical Vapor Deposition) method and the ALD (Atomic Layer Deposition) method. Since the thermal CVD method is a film formation method that does not use plasma, it has the advantage that defects are not generated due to plasma damage.

[0372] In the thermal CVD method, a source gas and an oxidizing agent are simultaneously fed into the chamber, the inside of the chamber is set to atmospheric pressure or reduced pressure, and a reaction is caused near or on the substrate to deposit on the substrate, thereby forming a film.

[0373]

[0374]

[0375] ​ It may also be possible.

[0376] Also, in the ALD method, the inside of the chamber is set to atmospheric pressure or reduced pressure, and the raw material gas for the reaction is sequentially introduced into the chamber, and film formation may be performed by repeating the order of gas introduction. For example, by switching each switching valve (also called a high-speed valve), two or more types of raw material gases are sequentially supplied to the chamber, and an inert gas (such as argon or nitrogen) is introduced simultaneously with or after the first raw material gas so that the plurality of types of raw material gases do not mix, and the second raw material gas is introduced. When an inert gas is introduced simultaneously, the inert gas becomes a carrier gas, and an inert gas may also be introduced simultaneously when the second raw material gas is introduced. Alternatively, after discharging the first raw material gas by vacuum exhaust instead of introducing an inert gas, the second raw material gas may be introduced. The first raw material gas adsorbs on the surface of the substrate to form the first layer, and reacts with the second raw material gas introduced later, so that the second layer is laminated on the first layer, forming a thin film. By repeating this gas introduction sequence multiple times until the desired thickness is reached while controlling the gas introduction sequence, a thin film with excellent step coverage can be formed. Since the thickness of the thin film can be adjusted by the number of times the gas introduction sequence is repeated, precise film thickness adjustment is possible, which is suitable for manufacturing fine FETs.

[0377] Thermal CVD methods such as the MOCVD method and the ALD method can form various films such as the conductive film, insulating film, oxide semiconductor film, and metal oxide film of the above-described embodiment. For example, when forming an In-Ga-ZnO film, trimethylindium, trimethylgallium, and dimethylzinc are used. The chemical formula of trimethylindium is In(CH3)3. Also, the t The chemical formula of trimethylgallium is Ga(CH3)3. Also, the chemical formula of dimethylzinc is , Zn(CH3)2. Further, without being limited to these combinations, triethylgallium (chemical formula Ga(C2H5)3) can also be used instead of trimethylgallium, and diethylzinc (chemical formula Zn(C2H5)2) can also be used instead of dimethylzinc.

[0378] For example, when forming a hafnium oxide film by a film forming apparatus using ALD, a raw material gas obtained by vaporizing a liquid containing a solvent and a hafnium precursor compound (hafnium alkoxide, hafnium amide such as tetrakis(dimethylamido)hafnium (TDMAH), etc.) and two types of gases, ozone (O3) as an oxidizing agent, are used. The chemical formula of tetrakis(dimethylamido)hafnium is Hf[N(CH3)2]4. Also, as other material liquids, there are tetrakis(ethylmethylamido)hafnium, etc. For example, when forming an aluminum oxide film by a film forming apparatus using ALD, a raw material gas obtained by vaporizing a liquid containing a solvent and an aluminum precursor compound (such as trimethylaluminum (TMA)) and two types of gases, H2O as an oxidizing agent, are used. The chemical formula of trimethylaluminum is Al(CH3)3. Also, as other material liquids, there are tris(dimethylamido)aluminum, triisobutylaluminum, aluminum tris(2,2,6,6-tetramethyl-3,5-heptanedionate), etc. For example, when forming a silicon oxide film by a film forming apparatus using ALD, hexa agent, are used. The chemical formula of tetrakis(dimethylamido)hafnium is Hf[N(CH3)2]4. Also, as other material liquids, there are tetrakis(ethylmethylamido)hafnium, etc. For example, when forming an aluminum oxide film by a film forming apparatus using ALD, a raw material gas obtained by vaporizing a liquid containing a solvent and an aluminum precursor compound (such as trimethylaluminum (TMA)) and two types of gases, H2O as an oxidizing agent, are used. The chemical formula of trimethylaluminum is Al(CH3)3. Also, as other material liquids, there are tris(dimethylamido)aluminum, triisobutylaluminum, aluminum tris(2,2,6,6-tetramethyl-3,5-heptanedionate), etc. For example, when forming a silicon oxide film by a film forming apparatus using ALD, hexa

[0379] For example, when forming an aluminum oxide film by a film forming apparatus using ALD, a raw material gas obtained by vaporizing a liquid containing a solvent and an aluminum precursor compound (such as trimethylaluminum (TMA)) and two types of gases, H2O as an oxidizing agent, are used. The chemical formula of trimethylaluminum is Al(CH3)3. Also, as other material liquids, there are tris(dimethylamido)aluminum, triisobutylaluminum, aluminum tris(2,2,6,6-tetramethyl-3,5-heptanedionate), etc. For example, when forming an aluminum oxide film by a film forming apparatus using ALD, a raw material gas obtained by vaporizing a liquid containing a solvent and an aluminum precursor compound (such as trimethylaluminum (TMA)) and two types of gases, H2O as an oxidizing agent, are used. The chemical formula of trimethylaluminum is Al(CH3)3. Also, as other material liquids, there are tris(dimethylamido)aluminum, triisobutylaluminum, aluminum tris(2,2,6,6-tetramethyl-3,5-heptanedionate), etc. For example, when forming an aluminum oxide film by a film forming apparatus using ALD, a raw material gas obtained by vaporizing a liquid containing a solvent and an aluminum precursor compound (such as trimethylaluminum (TMA)) and two types of gases, H2O as an oxidizing agent, are used. The chemical formula of trimethylaluminum is Al(CH3)3. Also, as other material liquids, there are tris(dimethylamido)aluminum, triisobutylaluminum, aluminum tris(2,2,6,6-tetramethyl-3,5-heptanedionate), etc. For example, when forming an aluminum oxide film by a film forming apparatus using ALD, a raw material gas obtained by vaporizing a liquid containing a solvent and an aluminum precursor compound (such as trimethylaluminum (TMA)) and two types of gases, H2O as an oxidizing agent, are used. The chemical formula of trimethylaluminum is Al(CH3)3. Also, as other material liquids, there are tris(dimethylamido)aluminum, triisobutylaluminum, aluminum tris(2,2,6,6-tetramethyl-3,5-heptanedionate), etc. For example, when forming an aluminum oxide film by a film forming apparatus using ALD, a raw material gas obtained by vaporizing a liquid containing a solvent and an aluminum precursor compound (such as trimethylaluminum (TMA)) and two types of gases, H2O as an oxidizing agent, are used. The chemical formula of trimethylaluminum is Al(CH3)3. Also, as other material liquids, there are tris(dimethylamido)aluminum, triisobutylaluminum, aluminum tris(2,2,6,6-tetramethyl-3,5-heptanedionate), etc. For example, when forming an aluminum oxide film by a film forming apparatus using ALD, a raw material gas obtained by vaporizing a liquid containing a solvent and an aluminum precursor compound (such as trimethylaluminum (TMA)) and two types of gases, H2O as an oxidizing agent, are used. The chemical formula of trimethylaluminum is Al(CH3)3. Also, as other material liquids, there are tris(dimethylamido)aluminum, triisobutylaluminum, aluminum tris(2,2,6,6-tetramethyl-3,5-heptanedionate), etc.

[0380] For example, when forming a silicon oxide film by a film forming apparatus using ALD, hexa Adsorb silane on the film-forming surface, remove chlorine contained in the adsorbed substance, and supply radicals of an oxidizing gas (O2 , nitrous oxide) to react with the adsorbed substance.

[0381] For example, when forming a tungsten film using a film-forming apparatus that utilizes ALD, WF6 gas and B2H6 gas are sequentially introduced repeatedly to form an initial tungsten film, and then WF6 gas and H2 gas are sequentially introduced repeatedly to form a tungsten film. Note that SiH4 gas may be used instead of B2H6 gas.

[0382] For example, when forming an oxide semiconductor film, such as an In-Ga-ZnO film using a film-forming apparatus that utilizes ALD, In(CH3)3 gas and O3 gas are sequentially introduced repeatedly to form an In-O layer, and then Ga(CH3)3 gas and O3 gas are sequentially introduced repeatedly to form a GaO layer , and then Zn(CH3)2 gas and O3 gas are sequentially introduced repeatedly to form a ZnO layer . Note that the order of these layers is not limited to this example. Also, these gases can be mixed to form a mixed compound layer such as an In-Ga-O layer, an In-Zn-O layer, or a Ga-Zn-O layer as well. Note that H2O gas obtained by bubbling with an inert gas such as Ar instead of O3 gas may be used, but it is preferable to use O3 gas that does not contain H. Also, instead of In(CH3 )3 gas, In(C2H5)3 gas may be used. Also, instead of Ga(CH3)3 gas , Ga(C2H5)3 gas may be used. Also, Zn(CH3)2 gas may be used .

[0383] Note that this embodiment can be appropriately combined with other embodiments shown in this specification .

[0384] (Embodiment 5) In this embodiment, the configuration of the information processing apparatus according to an aspect of the present invention will be described with reference to FIGS. 13 to 16.

[0385] FIG. 13(A) is a block diagram for explaining the configuration of the information processing apparatus 200. FIG. 13(B) is a projection view for explaining an example of the external appearance of the information processing apparatus 200.

[0386] FIG. 14(A) is a block diagram for explaining the configuration of the display unit 230. FIG. 14(B) is a block diagram for explaining the configuration of the display unit 230B. FIG. 14(C) is a circuit diagram for explaining the configuration of the pixel 232(i,j)

[0387] <Configuration Example of Information Processing Apparatus> The information processing apparatus 200 described in this embodiment includes an arithmetic unit 210 and an input / output unit 220 (see FIG. 13(A)).

[0388] The arithmetic unit 210 is provided with the function of being supplied with the position information P1 and supplying the image information V and the control information.

[0389] The input / output unit 220 is provided with the function of supplying the position information P1, and is supplied with the image information V and the control information.

[0390] The input / output unit 220 includes a display unit 230 for displaying the image information V and an input unit 240 for supplying the position information P1. Note that the touch panel includes the display unit 230 and the input unit 240.

[0391] Further, the display unit 230 includes a display element and a pixel circuit for driving the display element.

[0392] ​​​​​​The input unit 240 has a function of detecting the position of the pointer and providing position information P1 based on the detected position.

[0393] The arithmetic unit 210 has a function of determining the moving speed of the pointer etc. based on the position information P1.

[0394] The arithmetic unit 210 has a function of determining the contrast or brightness of the image information V based on the moving speed etc.

[0395] Thereby, it is possible to reduce the burden on the user's eyes when moving the display position of the image information, and it is possible to perform a display that is gentle on the user's eyes. As a result, it is possible to provide a novel information processing apparatus excellent in convenience or reliability.

[0396] <Configuration> One aspect of the present invention includes an arithmetic unit 210 or an input / output unit 220.

[0397] 《Arithmetic Unit 210》 The arithmetic unit 210 includes an arithmetic section 211 and a storage section 212. It also includes a transmission path 214 and an input / output interface 215 (see Fig. 13(A)).

[0398] 《Arithmetic Section 211》 The arithmetic section 211 has a function of executing a program, for example.

[0399] For example, the CPU described in Embodiment 6 can be used as the arithmetic section 211. Thereby, power consumption can be reduced.

[0400] 《Storage Section 212》 The storage section 212 has a function of storing, for example, a program executed by the arithmetic section 211, initial information, setting information, or an image etc.

[0401] Specifically, a transistor including a hard disk, a flash memory, or an oxide semiconductor or the like can be used for the storage unit 212.

[0402] 《Input / Output Interface 215, Transmission Line 214》 The input / output interface 215 includes terminals or wirings and has a function of supplying information and being supplied with information. For example, it can be electrically connected to the transmission line 214. Also, it can be electrically connected to the input / output device 220.

[0403] The transmission line 214 includes a wiring and has a function of supplying information and being supplied with information. For example, it can be electrically connected to the input / output interface 215. Also, it can be electrically connected to the arithmetic unit 211, the storage unit 212, or the input / output interface 215.

[0404] 《Input / Output Device 220》 The input / output device 220 includes a display unit 230, an input unit 240, a detection unit 250, or a communication unit 290. For example, the touch panel described in Embodiment 1 can be used for the input / output device 220.

[0405] 《Display Unit 230》 The display unit 230 has a display area 231, a drive circuit GD, and a drive circuit SD (see FIG. 4(A) of FIG. 1).

[0406] The display area 231 includes one or more pixels 232(i,j), a scanning line G(i) electrically connected to the pixels 232(i,j) arranged in the row direction, and a signal line S(j) electrically connected to the pixels 232(i,j) arranged in the column direction intersecting the row direction. Note that ​​​​​​​​​, i is an integer greater than or equal to 1 and less than or equal to m, j is an integer greater than or equal to 1 and less than or equal to n, and m and n are integers greater than or equal to 1 and are integers

[0407] Note that the pixel 232(i, j) is electrically connected to the scanning line G(i), the signal line S(j), and the wiring VCOM (see FIG. 14(C)).

[0408] Also, the display unit 230 can have a plurality of drive circuits. For example, the display unit 230B can have a drive circuit GDA and a drive circuit GDB (see FIG. 14(B)).

[0409] 《Drive Circuit GD》 The drive circuit GD has a function of supplying a selection signal based on control information.

[0410] For example, based on control information, it has a function of supplying a selection signal to one scanning line at a frequency of 30 Hz or more, preferably 60 Hz or more. Thereby, a moving image can be smoothly displayed

[0411] For example, based on control information, it has a function of supplying a selection signal to one scanning line at a frequency of less than 30 Hz, preferably less than 1 Hz, more preferably less than once per minute. Thereby, a still image can be displayed with flicker suppressed

[0412] Also, for example, when a plurality of drive circuits are provided, the frequency at which the drive circuit GDA supplies a selection signal and the frequency at which the drive circuit GDB supplies a selection signal can be made different. Specifically in a region where a moving image is smoothly displayed, a selection signal can be supplied at a higher frequency than in a region where a still image is displayed with flicker suppressed

[0413] 《Drive Circuit SD》​​​​​​ The drive circuit SD has a function of supplying an image signal based on the image information V.

[0414] 《Pixel 232(i,j)》 The pixel 232(i,j) includes a display element 235LC. Further, it includes a pixel circuit for driving the display element 235LC (see Fig. 14(C)).

[0415] 《Display element 235LC》 For example, a display element having a function of controlling light transmission can be used as the display element 235LC. Specifically, a polarizing plate and a liquid crystal element or a shutter-type MEMS display element, etc. can be used as the display element 235LC.

[0416] For example, a liquid crystal element driven by a driving method such as an IPS (In-Plane-Switching) mode or an FFS (Fringe Field Switching) mode can be used as the display element.

[0417] Also, an MVA (Multi-Domain Vertical Alignment) mode, an EVA (Electrically tilted Vertical Alignment) mode, a PVA (Patterned Vertical Alignment) mode, a CPA (Continuous Pinwheel Alignment)) mode, an ASV (Advanced Super-View) mode, a PSA (Polymer Sustained Alignment) mode, a UV A(Ultra Violet induced Multi-domain Vertical Al ignment) mode, etc. can be used. 2 A(Ultra Violet induced Multi-domain Vertical Al ​​​​​​Alignment mode, FPA (Field induced Photo-reac tive Alignment) mode, TBA (Transverse Bend A lignment) mode, SFR (Super-Fast Responce) mode and other driving methods can be used to drive a liquid crystal element that can be used as a display element .

[0418] Or, TN (Twisted Nematic) mode, FLC (Ferroelec tric Liquid Crystal) mode, AFLC (AntiFerroel ectric Liquid Crystal) mode, ASM (Axially Sy mmetric aligned Micro-cell) mode, OCB (Optic ally Compensated Birefringence) mode and other driving methods can be used to drive a liquid crystal element that can be used as a display element. The liquid crystal element has a layer containing a liquid crystal material and electrodes arranged so that an electric field for controlling the alignment of the liquid crystal material can be applied. For example, an electric field in a direction intersecting the thickness direction (also referred to as the longitudinal direction) of the layer containing the liquid crystal material can be used as the electric field for controlling the alignment of the liquid crystal material

[0419] For example, thermotropic liquid crystals, low molecular liquid crystals, polymer liquid crystals, polymer dispersed liquid crystals, ferroelectric liquid crystals or antiferroelectric liquid crystals, etc. can be used for the layer containing the liquid crystal material. Also, depending on the conditions, liquid crystals showing phases such as cholesteric phase, smectic phase, cubic phase, chiral nematic phase, etc can be used for the layer containing the liquid crystal material. Or, liquid crystals showing a blue phase can be used for the layer containing the liquid crystal material. .

[0420] For example, thermotropic liquid crystals, low molecular liquid crystals, polymer liquid crystals, polymer dispersed liquid crystals, ferroelectric liquid crystals or antiferroelectric liquid crystals, etc. can be used for the layer containing the liquid crystal material. Also, depending on the conditions, liquid crystals showing phases such as cholesteric phase, smectic phase, cubic phase, chiral nematic phase, etc can be used for the layer containing the liquid crystal material. Or, liquid crystals showing a blue phase can be used for the layer containing the liquid crystal material. Or, liquid crystals showing a blue phase The liquid crystal can be used for a layer containing a liquid crystal material.

[0421] 《Pixel Circuit》 A circuit corresponding to a display element can be used for the pixel circuit.

[0422] For example, a pixel circuit that is electrically connected to a scanning line G(i), a signal line S(j), and a wiring VCOM and has a function of driving a display element 235LC will be described (see Fig. 14(C)). )

[0423] A switch, a capacitive element, etc. can be used for the pixel circuit. Also, for example, a transistor, a diode, a resistive element, a capacitive element, or an inductor can be used.

[0424] For example, one or more transistors can be used as the switch. Alternatively, a plurality of transistors connected in parallel, a plurality of transistors connected in series, or a plurality of transistors connected in a combination of series and parallel can be used for one switch.

[0425] For example, a capacitive element may be formed using one electrode of a first display element 235LC and a conductive film having a region overlapping the first electrode.

[0426] For example, the pixel circuit has a transistor whose gate electrode is electrically connected to the scanning line G(i), and whose first electrode is electrically connected to the signal line S(j) and functions as a switch SW. Also, it has a display element 235LC in which one electrode is electrically connected to the second electrode of the transistor, and the other electrode is electrically connected to the wiring VCOM. Also, it has a capacitive element C in which the first electrode is electrically connected to the second electrode of the transistor, and the second electrode is electrically connected to the wiring VCOM. ​​

[0427] "Transistor" For example, a semiconductor film that can be formed in the same process can be used for the transistors of the drive circuit and the pixel circuit.

[0428] For example, a bottom-gate type transistor or a top-gate type transistor can be used.

[0429] By the way, for example, the manufacturing line of a bottom-gate type transistor using amorphous silicon as a semiconductor can be easily modified to the manufacturing line of a bottom-gate type transistor using an oxide semiconductor as a semiconductor. Also, for example, the manufacturing line of a top-gate type using polysilicon as a semiconductor can be easily modified to the manufacturing line of a top-gate type transistor using an oxide semiconductor as a semiconductor.

[0430] For example, a transistor using a semiconductor containing a Group 4 element can be used. Specifically, a semiconductor containing silicon can be used for the semiconductor film. For example, a transistor using single crystal silicon, polysilicon, microcrystalline silicon, or amorphous silicon, etc. for the semiconductor film can be used.

[0431] Note that the temperature required for manufacturing a transistor using polysilicon as a semiconductor is lower than that for a transistor using single crystal silicon as a semiconductor.

[0432] Also, the field-effect mobility of a transistor using polysilicon as a semiconductor is higher than that of a transistor using amorphous silicon as a semiconductor. Thereby, the aperture ratio of the pixel is improved. It is possible. In addition, pixels provided with extremely high fineness, a gate drive circuit, and a source drive circuit can be formed on the same substrate. As a result, the number of components constituting the electronic device can be reduced.

[0433] Also, the reliability of a transistor using polysilicon as a semiconductor is superior to that of a transistor using amorphous silicon as a semiconductor.

[0434] For example, a transistor using an oxide semiconductor can be utilized. Specifically, an oxide semiconductor containing indium or an oxide semiconductor containing indium, gallium, and zinc can be used for the semiconductor film.

[0435] For example, a transistor in which the leakage current in the off state is smaller than that of a transistor using amorphous silicon for the semiconductor film can be used. Specifically, a transistor using an oxide semiconductor for the semiconductor film can be used.

[0436] Thereby, the time for which the pixel circuit can hold an image signal can be made longer than the time that a pixel circuit using a transistor using amorphous silicon for the semiconductor film can hold. Specifically, while suppressing the occurrence of flicker, a selection signal can be supplied at a frequency of less than 30 Hz, preferably less than 1 Hz, more preferably less than once per minute. As a result, the fatigue accumulated by the user of the information processing apparatus can be reduced. Also, the power consumption

[0437] associated with driving can be reduced. A semiconductor containing gallium arsenide can be used for the semiconductor film.

[0438] For example, a transistor using an organic semiconductor can be utilized. Specifically, a poly organic semiconductor containing arylamines or graphene can be used for the semiconductor film.

[0439] 《Input unit 240》 Various human interfaces and the like can be used for the input unit 240 (see Fig. 13 (A)).

[0440] For example, a keyboard, a mouse, a touch sensor, a microphone, or a camera, etc. can be used for the input unit 240 It is possible to use a touch sensor having a region overlapping with the display unit 230. An input / output device including the display unit 230 and a touch sensor having a region overlapping with the display unit 230 can be referred to as a touch panel.

[0441] For example, the user can use the finger touching the touch panel as a pointer to make various gestures (such as tap, drag, swipe, pinch-in, etc.).

[0442] For example, the arithmetic unit 210 analyzes information such as the position or trajectory of a finger contacting the touch panel, and when the analysis result satisfies a predetermined condition, it can be assumed that a specific gesture is supplied. As a result, the user can supply a predetermined operation command associated with a predetermined gesture in advance using the gesture.

[0443] For example, the user can supply a "scroll command" for changing the display position of the image information using a gesture of moving a finger contacting the touch panel along the touch panel. ​​​​​

[0444] "Detection unit 250" The detection unit 250 is provided with a function of detecting the surrounding state and acquiring information P2.

[0445] For example, a camera, an acceleration sensor, an azimuth sensor, a pressure sensor, a temperature sensor, a humidity sensor, an illumination sensor, or a GPS (Global Positioning System) signal receiving circuit, etc. can be used for the detection unit 250.

[0446] "Communication unit 290" The communication unit 290 is provided with a function of supplying information to a network and acquiring information from the network.

[0447] "Program" With reference to FIGS. 15 and 16, one aspect of the present invention will be described using the program of one aspect of the present invention.

[0448] FIG. 15(A) is a flowchart for explaining the main processing of the program of one aspect of the present invention, and FIG. 15(B) is a flowchart for explaining the interrupt processing.

[0449] FIG. 16 is a schematic diagram for explaining a method of displaying image information on the display unit 230.

[0450] The program of one aspect of the present invention is a program having the following steps (see FIG. 15(A )).

[0451] In the first step, the settings are initialized. (See FIG. 15(A)(S1))

[0452] For example, predetermined image information and a second mode can be used for the initial settings.

[0453] For example, a still image can be used as the predetermined image information. Or, a mode in which a selection signal is supplied at a frequency of less than 30 Hz, preferably less than 1 Hz, more preferably less than once per minute can be used for the second mode. For example, a mode in which a selection signal is supplied at a frequency of less than 30 Hz, preferably less than 1 Hz, more preferably less than once per minute can be used for the second mode. For example, a mode in which a selection signal is supplied at a frequency of less than 30 Hz, preferably less than 1 Hz, more preferably less than once per minute can be used for the second mode.

[0454] In the second step, interrupt processing is permitted (see FIG. 15(A)(S2)). Note that the arithmetic unit for which interrupt processing has been permitted can perform interrupt processing in parallel with the main processing. The arithmetic unit that has returned from the interrupt processing to the main processing can reflect the result obtained by the interrupt processing in the main processing. In the second step, interrupt processing is permitted (see FIG. 15(A)(S2)). Note that the arithmetic unit for which interrupt processing has been permitted can perform interrupt processing in parallel with the main processing. The arithmetic unit that has returned from the interrupt processing to the main processing can reflect the result obtained by the interrupt processing in the main processing. In the second step, interrupt processing is permitted (see FIG. 15(A)(S2)). Note that the arithmetic unit for which interrupt processing has been permitted can perform interrupt processing in parallel with the main processing. The arithmetic unit that has returned from the interrupt processing to the main processing can reflect the result obtained by the interrupt processing in the main processing. In the second step, interrupt processing is permitted (see FIG. 15(A)(S2)). Note that the arithmetic unit for which interrupt processing has been permitted can perform interrupt processing in parallel with the main processing. The arithmetic unit that has returned from the interrupt processing to the main processing can reflect the result obtained by the interrupt processing in the main processing.

[0455] When the value of the counter is the initial value, the arithmetic unit may be made to perform interrupt processing, and when returning from the interrupt processing, the counter may be set to a value other than the initial value. Thereby, interrupt processing can always be performed after the program is started. When the value of the counter is the initial value, the arithmetic unit may be made to perform interrupt processing, and when returning from the interrupt processing, the counter may be set to a value other than the initial value. Thereby, interrupt processing can always be performed after the program is started. When the value of the counter is the initial value, the arithmetic unit may be made to perform interrupt processing, and when returning from the interrupt processing, the counter may be set to a value other than the initial value. Thereby, interrupt processing can always be performed after the program is started.

[0456] In the third step, the image information selected in the first step or the interrupt processing is displayed in a predetermined mode (see FIG. 15(A)(S3)). In the third step, the image information selected in the first step or the interrupt processing is displayed in a predetermined mode (see FIG. 15(A)(S3)).

[0457] For example, based on the initial settings, predetermined image information is displayed in the second mode.

[0458] Specifically, the predetermined image information is displayed using a mode in which a selection signal is supplied to one scanning line at a frequency of less than 30 Hz, preferably less than 1 Hz, more preferably less than once per minute. Specifically, the predetermined image information is displayed using a mode in which a selection signal is supplied to one scanning line at a frequency of less than 30 Hz, preferably less than 1 Hz, more preferably less than once per minute.

[0459] For example, a selection signal is supplied at time T1, and the first image information PIC1 is displayed on the display unit 230 (see FIG. 16). Also, for example, a selection signal is supplied at time T2 one second later, and predetermined image information is displayed. For example, a selection signal is supplied at time T1, and the first image information PIC1 is displayed on the display unit 230 (see FIG. 16). Also, for example, a selection signal is supplied at time T2 one second later, and predetermined image information is displayed. For example, a selection signal is supplied at time T1, and the first image information PIC1 is displayed on the display unit 230 (see FIG. 16). Also, for example, a selection signal is supplied at time T2 one second later, and predetermined image information is displayed.

[0460] Or, when a predetermined event is not supplied in the interrupt process, the second mode displays one piece of image information.

[0461] For example, a selection signal is supplied at time T5, and the fourth piece of image information PIC4 is displayed on the display unit 230. Also, for example, a selection signal is supplied at time T6 one second later, and the same piece of image information is displayed. Note that the period from time T5 to time T6 can be made the same as the period from time T1 to time T2.

[0462] For example, in the interrupt process, when a predetermined event is supplied, the first mode displays predetermined image information.

[0463] Specifically, in the interrupt process, when an event associated with a "page turning instruction" is supplied, a mode in which a selection signal is supplied to one scanning line at a frequency of 30 Hz or more, preferably 60 Hz or more, is used to switch the display from one piece of image information being displayed to another piece of image information.

[0464] Or, in the interrupt process, when an event associated with a "scroll instruction" is supplied, a mode in which a selection signal is supplied to one scanning line at a frequency of 30 Hz or more, preferably 60 Hz or more, is used to display the second piece of image information PIC2 including a part of the first piece of image information PIC1 being displayed and a part continuous thereto.

[0465] As a result, for example, a moving image in which an image is gradually switched along with a "page turning instruction" can be smoothly displayed. Or, a moving image in which an image gradually moves along with a "scroll instruction" can be smoothly displayed. ​​​​​​​

[0466] Specifically, at time T3 after an event associated with a "scroll command" is supplied a selection signal is supplied, and a second image information PIC2 with its display position and the like changed is displayed (see FIG. 16 reference). Also, a selection signal is supplied at time T4, and a third image information PIC3 with its display position and the like further changed is displayed. Note that the period from time T2 to time T3, the period from time T3 to time T 4, and the period from time T4 to time T5 are shorter than the period from time T1 to time T2 .

[0467] In the fourth step, if an end command is supplied, proceed to the fifth step; if no end command is supplied, select to proceed to the third step (see FIG. 15(A)(S4) reference).

[0468] Note that, for example, in an interrupt process, an end command can be supplied

[0469] In the fifth step, end (see FIG. 15(A)(S5) reference).

[0470] The interrupt process includes the following sixth step to ninth step (see FIG. 15(B) reference) .

[0471] In the sixth step, if a predetermined event is supplied within a predetermined period, proceed to the seventh step; if no predetermined event is supplied, decide to proceed to the eighth step (see FIG. 15(B)(S6) reference).

[0472] For example, it can be used as a condition whether a predetermined event is supplied within a predetermined period Specifically, it is 5 seconds or less, 1 second or less, or preferably 0.5 seconds or less, preferably 0.1 seconds or less and greater than 0 A period longer than seconds can be set as a predetermined period.

[0473] Also, for example, an event associated with an end command can be included in a predetermined event.

[0474] In the seventh step, change the mode. Specifically, if the first mode was selected select the second mode, and if the second mode was selected, select the first mode (see Fig. 15(B)(S7)).

[0475] In the eighth step, end the interrupt process (see Fig. 15(B)(S8)).

[0476] 《Predetermined Event》 Various events can be associated with various commands.

[0477] For example, a "page turning command" to switch the display from one displayed image information to another, moving the display position of a displayed part of one image information and displaying another part that is continuous with the part There are "scroll commands" and the like.

[0478] For example, events such as "click" and "drag" supplied using a pointing device such as a mouse, and events such as "tap", "drag" or "swipe" supplied to a touch panel using a finger or the like as a pointer can be used.

[0479] For example, the position of a slider pointed to by a pointer, the speed of a swipe, the speed of a drag, etc. can be used to provide arguments for commands associated with a predetermined event.

[0480] Specifically, determine the speed of turning the page used when executing the "page turning command", etc. Arguments such as those used when executing a "scroll command" and the speed at which the display position used for scrolling is moved, etc. can be specified. Arguments can be given to determine this.

[0481] Also, for example, the brightness, contrast, or color tone of the display may be changed according to the page turning speed or / and the scroll speed. Specifically, when the page turning speed or / and the scroll speed is faster than a predetermined speed, the display may be made darker in synchronization with the speed.

[0482] Or, when the page turning speed or / and the scroll speed is faster than a predetermined speed, the contrast may be decreased in synchronization with the speed. For example, a speed at which it is difficult to visually follow the displayed image can be used as the predetermined speed.

[0483] Also, a method of reducing the contrast by bringing the bright tone areas included in the image information closer to the dark tone can be used. For example, a method of reducing the contrast by bringing the dark tone areas included in the image information closer to the bright tone can be used.

[0484] Specifically, when the page turning speed or / and the scroll speed is faster than a predetermined speed, the display may be made to have a stronger yellow color or / and a weaker blue color in synchronization with the speed. This can be done.

[0485] Note that this embodiment can be appropriately combined with other embodiments shown in this specification. This can be done.

[0486] Also, a method of reducing the contrast by bringing the dark tone areas included in the image information closer to the bright tone can be used. This can be done.

[0487] Specifically, when the page turning speed or / and the scroll speed is faster than a predetermined speed, the display may be made to have a stronger yellow color or / and a weaker blue color in synchronization with the speed. Or, the display may be made to have a weaker blue color. This can be done.

[0488] Note that this embodiment can be appropriately combined with other embodiments shown in this specification. This can be done.

[0489] (Embodiment 6) In this embodiment, a semiconductor device (memory device) that can retain stored content even when power is not supplied and has no limit on the number of write operations, and a CPU including the same will be described. The CPU described in this embodiment can be used, for example, in the information processing device described in Embodiment 5.

[0490] <Memory Device> An example of a semiconductor device (memory device) that can retain stored content even when power is not supplied and has no limit on the number of write operations is shown in FIG. 17. Note that FIG. 17(B) is a circuit diagram representing FIG. 17(A).

[0491] The semiconductor device shown in FIGS. 17(A) and 17(B) includes transistors 3200 using a first semiconductor material, transistors 3300 using a second semiconductor material, and a capacitor element 3400.

[0492] The first semiconductor material and the second semiconductor material preferably have different energy gaps. For example, the first semiconductor material can be a semiconductor material other than an oxide semiconductor (such as silicon (including strained silicon), germanium, silicon germanium, silicon carbide, gallium arsenide, aluminum gallium arsenide, indium phosphide, gallium nitride, an organic semiconductor, etc.), and the second semiconductor material can be an oxide semiconductor. Transistors using single crystal silicon or the like as a material other than an oxide semiconductor are easy to operate at high speed. On the other hand, transistors using an oxide semiconductor have a low off-current.

[0493] In transistor 3300, a channel is formed in a semiconductor layer having an oxide semiconductor.​​​​​​​​​​​​​ It is a transistor. Since the off-current of transistor 3300 is small, by using this it is possible to hold the memory content over a long period of time. That is, it can be a semiconductor memory device that does not require a refresh operation or has an extremely low refresh operation frequency, so that the power consumption

[0494] can be sufficiently reduced. In FIG. 17(B), the first wiring 3001 is electrically connected to the source electrode of transistor 3200, and the second wiring 3002 is electrically connected to the drain electrode of transistor 3200. Also, the third wiring 3003 is electrically connected to one of the source electrode and the drain electrode of transistor 3300, and the fourth wiring 3004 is electrically connected to the gate electrode of transistor 3300. Then, the gate electrode of transistor 3200, and the other of the source electrode and the drain electrode of transistor 3300 are electrically connected to one of the electrodes of the

[0495] capacitor element 3400, and the fifth wiring 3005 is electrically connected to the other of the electrodes of the capacitor element 3400. In the semiconductor device shown in FIG. 17(A), by taking advantage of the feature that the potential

[0496] of the gate electrode of transistor 3200 can be held, information can be written, held, and read as follows. First, the potential of the fourth wiring 3004 is set to a potential at which transistor 3300 is turned on, and transistor 3300 is turned and is applied to the capacitance element 3400. That is, a predetermined charge is applied (written) to the gate of the transistor 3200. Here, it is assumed that either one of two different potential level charges (hereinafter referred to as Low level charge and High level charge) is applied. After that, the potential of the fourth wiring 3004 is set to a potential at which the transistor 3300 is turned off, and the transistor 3300 is turned off, so that the charge applied to the gate of the transistor 3200 is held (held). Since the off-current of the transistor 3300 is extremely small, the charge on the gate of the transistor 3200

[0497] is held for a long time. Next, the reading of information will be described. When a predetermined potential (constant potential) is applied to the first wiring 3001

[0498] and an appropriate potential (read potential) is applied to the fifth wiring 3005, the second wiring 3002 takes different potentials according to the amount of charge held on the gate of the transistor 3200. Generally, when the transistor 3200 is an n-channel type, the apparent threshold value Vth_H when a High level charge is applied to the gate electrode of the transistor 3200 is lower than the apparent threshold value Vth_L when a Low level charge is applied to the gate electrode of the transistor 3200. Here, the apparent threshold voltage refers to the potential of the fifth wiring 3005 required to turn the transistor 3200 into the "on state". Therefore, by setting the potential of the fifth wiring 3005 to a potential V0 between Vth_H and Vth_L, the charge applied to the gate of the transistor 3200 can be discriminated. Here, the apparent threshold voltage means the potential of the fifth wiring 3005 required to turn the transistor 3200 into the "on state". Therefore, by setting the potential of the fifth wiring 3005 to a potential V0 between Vth_H and Vth_L, the charge applied to the gate of the transistor 3200 can be discriminated. For example, in writing, when a high-level charge is applied, if the potential of the fifth wiring 3005 becomes V0 (> Vth_H), the transistor 3200 is in the "on state" When a low-level charge is applied, even if the potential of the fifth wiring 3005 is V0 (< Vth_L), the transistor 3200 remains in the "off state". Therefore, by determining the potential of the second wiring 3002, the stored information can be read .

[0499] When the memory cells are arranged and used in an array, it is necessary to be able to read only the information of the desired memory cell. For example, in a memory cell where the information is not read in this way , a potential such that the transistor 3200 is in the "off state" regardless of the potential applied to the gate electrode, that is, a potential smaller than Vth_H, is applied to the fifth wiring 3005 , so that only the information of the desired memory cell can be read. Or, in a memory cell where the information is not read , a potential such that the transistor 3200 is in the "on state" regardless of the potential applied to the gate electrode, that is, a potential larger than Vth_L, is applied to the fifth wiring 3005, so that only the information of the desired memory cell can be read.

[0500] .

[0500] The semiconductor device shown in Fig. 17(C) is different from Fig. 17(A ) in that the transistor 3200 is not provided. Also in this case, the writing and holding operations of information are possible by the same operation as above.

[0501] Next, the reading of the information of the semiconductor device shown in Fig. 17(C) will be described. The transistor When 3300 is turned on, the third wiring 3003 in a floating state and the capacitor element 3400 become conductive, and charges are redistributed between the third wiring 3003 and the capacitor element 3400. As a result , the potential of the third wiring 3003 changes. The amount of change in the potential of the third wiring 3003 depends on the potential of one of the electrodes of the capacitor element 3400 (or the charges stored in the capacitor element 3400) and takes different values.

[0502] For example, if the potential of one of the electrodes of the capacitor element 3400 is V, the capacitance of the capacitor element 3400 is C, the capacitance component of the third wiring 3003 is CB, and the potential of the third wiring 3003 before charge redistribution is VB0, then the potential of the third wiring 3003 after charge redistribution is (CB × VB0 + C × V) / (CB + C). Therefore, assuming that the potential of one of the electrodes of the capacitor element 3 400 takes two states of V1 and V0 (V1 > V0) as the state of the memory cell, when the potential V 1 is held, the potential of the third wiring 3003 (=(CB × VB0 + C × V1) / ( CB + C)) is higher than the potential of the third wiring 3003 when the potential V0 is held (=(CB × VB0 + C × V0) / (CB + C)). It can be seen that

[0503] And by comparing the potential of the third wiring 3003 with a predetermined potential, information can be read out.

[0504] In this case, a transistor in which the above first semiconductor material is applied to a drive circuit for driving the memory cell can be used, and a transistor in which the second semiconductor material is applied as the transistor 3300 can be stacked and provided on the drive circuit.

[0505] ​​​In the semiconductor device shown in this embodiment, an off-current transistor using an oxide semiconductor in the channel formation region is applied, so that the stored content can be retained for an extremely long period of time. That is, the refresh operation becomes unnecessary or the frequency of the refresh operation can be made extremely low, so that the power consumption can be sufficiently reduced. Also, even when there is no power supply (however, it is desirable that the potential is fixed), the stored content can be retained for a long time. Moreover, in the semiconductor device shown in this embodiment, a high voltage is not required for writing information, and there is no problem of electron degradation. For example, unlike a conventional non-volatile memory, it is not necessary to inject electrons into the floating gate or extract electrons from the floating gate, so that problems such as degradation of the gate insulating film do not occur at all. That is, in the semiconductor device shown in this embodiment, there is no limit to the number of rewritable times, which has been a problem in conventional non-volatile memories, and the reliability is dramatically improved.

[0506] Furthermore, since information is written depending on the on-state and off-state of the transistor, high-speed operation can be easily realized.

[0507]

[0508] <cpu> Next, a CPU including the above storage device will be described.

[0509] FIG. 18 is a block diagram showing a configuration example of a CPU including the above storage device.

[0510] The CPU shown in FIG. 18 has, on a substrate 1190, an ALU 1191 (ALU: Arithmetic logic unit, arithmetic circuit), an ALU controller 1192, an instruction decoder 1193, an interrupt controller 1194, a timing controller 1195, a register 1196, a register controller 1197, a bus interface 1 198 (Bus I / F), a rewritable ROM 1199, and a ROM interface 1189 (ROM I / F). The substrate 1190 uses a semiconductor substrate, an SOI substrate , a glass substrate, or the like. The ROM 1199 and the ROM interface 1189 may be provided on a separate chip. Of course, the CPU shown in FIG. 18 is merely an example showing a simplified configuration, and an actual CPU has various configurations depending on its application. For example, a configuration including the CPU or the arithmetic circuit shown in FIG. 18 as one core, and including a plurality of such cores, such that each core operates in parallel may be adopted. Also, the number of bits that the CPU can handle with its internal arithmetic circuit or data bus can be, for example, 8 bits, 16 bits, 32 bits, 64 bits, or the like.

[0511] Instructions input to the CPU via the bus interface 1198 are input to the instruction decoder 1193, decoded, and then sent to the ALU controller 1192, the inter rupt controller 1194, the register controller 1197, the timing controller It is input to 1195.

[0512] The ALU controller 1192, the interrupt controller 1194, the register controller 1197, and the timing controller 1195 perform various controls based on the decoded instruction. Specifically, the ALU controller 1192 generates signals for controlling the operation of the ALU 1191. Also, the interrupt controller 1194 determines and processes interrupt requests from external input / output devices and peripheral circuits during the execution of the CPU program according to their priorities and mask states. The register controller 1197 generates addresses for the register 1196 and reads from and writes to the register 1196 according to the state of the CPU.

[0513] 2, the instruction decoder 1193, the interrupt controller 1194, and the register controller 1197. For example, the timing controller 1195 includes an internal clock generation unit that generates an internal clock signal based on a reference clock signal and supplies the internal clock signal to the various circuits described above.

[0514] In the CPU shown in FIG. 18, a memory cell is provided in the register 1196.

[0515] In the CPU shown in FIG. 18, the register controller 1197 selects the holding operation in the register 1196 according to an instruction from the ALU 1191. That is, in the memory cell included in the register 1196, whether to hold data by a flip-flop or the capacity Select whether to hold data by an element. When holding data by a flip-flop is selected, a power supply voltage is supplied to the memory cell in register 1196 . When holding data in a capacitive element is selected, data is rewritten to the capacitive element, and the supply of the power supply voltage to the memory cell in register 1196 can be stopped .

[0516] FIG. 19 is an example of a circuit diagram of a memory element that can be used as register 1196. Memory element 1200 includes a circuit 1201 in which stored data is volatile when the power supply is cut off, a circuit 1202 in which stored data is non-volatile when the power supply is cut off, a switch 1203, a switch 1204, a logic element 1206, a capacitive element 1207, and a circuit 1220 having a selection function. Circuit 1202 includes a capacitive element 1208, a transistor 1209, and a transistor 1210 . Note that memory element 1200 may further include other elements such as a diode, a resistance element, and an inductor as required.

[0517] Here, the above-described memory device can be used for circuit 1202. When the supply of the power supply voltage to memory element 1200 is stopped, the gate of transistor 1209 in circuit 1202 is connected to ground potential (0 V), or a potential at which transistor 1209 is turned off continues to be input. For example, the gate of transistor 1209 is configured to be grounded via a load such as a resistor .

[0518] Switch 1203 is configured using a transistor 1213 of one conductivity type (for example, an n-channel type), and switch 1204 is of a conductivity type opposite to that of the one conductivity type (for example, a p-channel type) . ​​An example configured using the transistor 1214 is shown. Here, the first end of the switch 1203 corresponds to one of the source and drain of the transistor 1213, and the second terminal of the switch 1203 corresponds to the other of the source and drain of the transistor 1213. The switch 1203 is made conductive or non-conductive between the first terminal and the second terminal (that is, the on-state or off-state of the transistor 1213) by the control signal RD input to the gate of the transistor 1213. The first terminal of the switch 1204 corresponds to one of the source and drain of the transistor 1214, and the second terminal of the switch 1204 corresponds to the other of the source and drain of the transistor 1214. The switch 1204 is made conductive or non-conductive between the first terminal and the second terminal (that is, the on-state or off-state of the transistor 1214) by the control signal RD input to the gate of the transistor 1214.

[0519] One of the source and drain of the transistor 1209 is electrically connected to one of the pair of electrodes of the capacitive element 1208 and to the gate of the transistor 1210. Here, the connection part is designated as node M2. One of the source and drain of the transistor 1210 is electrically connected to a wiring (for example, a GND line) capable of supplying a low power supply potential, and the other is electrically connected to the first terminal of the switch 1 203 (one of the source and drain of the transistor 1213). The second terminal of the switch 1203 (the other of the source and drain of the transistor 1213) is electrically connected to the first terminal of the switch 1204 (one of the source and drain of the transistor 1214) . The second terminal of the switch 1204 (the source of the transistor 1214 ) The other (source and drain) is electrically connected to a wiring capable of supplying the power supply potential VDD The second terminal of the switch 1203 (the other of the source and drain of the transistor 1213) and the first terminal of the switch 1204 (one of the source and drain of the transistor 1214) and the input terminal of the logic element 1206 and one of the pair of electrodes of the capacitor element 1207 are electrically connected. Here, the connection part is taken as the node M1. The other of the pair of electrodes of the capacitor element 1207 can be configured to receive a constant potential. For example, it can be configured to receive a low power supply potential (such as GND) or a high power supply potential (such as VDD). The other of the pair of electrodes of the capacitor element 1207 is a wiring capable of supplying a low power supply potential (for example, a GND line) and is electrically connected. The other of the pair of electrodes of the capacitor element 1208 can be configured to receive a constant potential. For example, it can be configured to receive a low power supply potential (such as GND) or a high power supply potential (such as VDD). The other of the pair of electrodes of the capacitor element 1208 is a wiring capable of supplying a low power supply potential (for example, a GND line ) and is electrically connected.

[0520] Note that the capacitor elements 1207 and 1208 can also be omitted by positively using the parasitic capacitances of transistors and wirings, etc.

[0521] The control signal WE is input to the first gate (the first gate electrode) of the transistor 1209 The switches 1203 and 1204 are selected to be in a conductive state or a non-conductive state between the first terminal and the second terminal by a control signal RD different from the control signal WE, and one of the switches ​​When the first terminal and the second terminal of one switch are in a conductive state, the first terminal and the second terminal of the other switch are in a non-conductive state.

[0522] To the other side of the source and drain of the transistor 1209, a signal corresponding to the data held in the circuit 1201 is input. In FIG. 19, an example is shown in which the signal output from the circuit 1201 is input to the other side of the source and drain of the transistor 1209. The signal output from the second terminal (the other side of the source and drain of the transistor 1213) of the switch 1203 becomes an inverted signal whose logical value is inverted by the logic element 1206, and is input to the circuit 1201 via the circuit 1220. The signal output from the second terminal (the other side of the source and drain of the transistor 1213) of the switch 1203 becomes an inverted signal whose logical value is inverted by the logic element 1206, and is input to the circuit 1201 via the circuit 1220. is input to the circuit 1201.

[0523] Note that in FIG. 19, an example is shown in which the signal output from the second terminal (the other side of the source and drain of the transistor 1213) of the switch 1203 is input to the circuit 1201 via the logic element 1206 and the circuit 1220, but the present invention is not limited to this. The signal output from the second terminal (the other side of the source and drain of the transistor 1213) of the switch 1203 may be input to the circuit 1201 without having its logical value inverted. For example, when there is a node in the circuit 1201 that holds a signal whose logical value is inverted from the signal input from the input terminal, the signal output from the second terminal (the other side of the source and drain of the transistor 1213) of the switch 1203 can be input to the node. The signal output from the second terminal (the other side of the source and drain of the transistor 1213) of the switch 1203 may be input to the circuit 1201 without having its logical value inverted. For example, when there is a node in the circuit 1201 that holds a signal whose logical value is inverted from the signal input from the input terminal, the signal output from the second terminal (the other side of the source and drain of the transistor 1213) of the switch 1203 can be input to the node. Further, in FIG. 19, among the transistors used for the memory element 1200, transistors other than the transistor 1209 are formed of a layer or a substrate 119 made of a semiconductor other than an oxide semiconductor. can be input to the node.

[0524] Further, in FIG. 19, among the transistors used for the memory element 1200, transistors other than the transistor 1209 are formed of a layer or a substrate 119 made of a semiconductor other than an oxide semiconductor. is a semiconductor other than an oxide semiconductor. It can be a transistor in which a channel is formed at 0. For example, a silicon layer or It can be a transistor in which a channel is formed in a silicon substrate. Also, all the transistors used in the memory element 1200 can also be transistors in which the channel is formed of an oxide semiconductor film. Alternatively, the memory element 1200 may include transistors in which the channel is formed of an oxide semiconductor film, other than the transistor 1209, and the remaining transistors can also be transistors in which a channel is formed in a layer or substrate 1190 made of a semiconductor other than an oxide semiconductor. For example, the circuit 1201 in FIG. 19 can use a flip-flop circuit. Also, as the logic element 1206, for example, an inverter, a clocked inverter, or the like can be used.

[0525] In the semiconductor device shown in this embodiment, while no power supply voltage is supplied to the memory element 1200, the data stored in the circuit 1201 can be held by the capacitor element 1208 provided in the circuit 1202.

[0526] In the semiconductor device shown in this embodiment, while no power supply voltage is supplied to the memory element 1200, the data stored in the circuit 1201 can be held by the capacitor element 1208 provided in the circuit 1202.

[0527] Also, a transistor in which a channel is formed in an oxide semiconductor film has an extremely small off-current. For example, the off-current of a transistor in which a channel is formed in an oxide semiconductor film is significantly lower than the off-current of a transistor in which a channel is formed in crystalline silicon. Therefore, by using a transistor in which a channel is formed in an oxide semiconductor film as the transistor 1209, the signal held in the capacitor element 1208 is maintained for a long time even while no power supply voltage is supplied to the memory element 1200. Thus, the memory element 1200 is a power supply voltage 8 is retained for a long time. In this way, the memory element 1200 is a power supply voltage​​​ It is possible to retain the stored content (data) even while the supply of is stopped.

[0528] Also, by providing switches 1203 and 1204, a precharge operation is performed. Since it is a memory element characterized by this, after the restoration of the supply of the power supply voltage, the time until the circuit 1201 retains the original data again can be shortened.

[0529] Also, in the circuit 1202, the signal held by the capacitive element 1208 is input to the gate of the transistor 1210. Therefore, after the supply of the power supply voltage to the memory element 1200 is resumed, the signal held by the capacitive element 1208 can be converted into the state ( on state or off state) of the transistor 1210 and read out from the circuit 1202. Therefore, even if the potential corresponding to the signal held by the capacitive element 1208 fluctuates somewhat, the original signal can be accurately read out.

[0530] By using such a memory element 1200 in a memory device such as a register or a cache memory that the processor has, it is possible to prevent the loss of data in the memory device due to the stop of the supply of the power supply voltage. Also, after the supply of the power supply voltage is resumed, it is possible to return to the state before the stop of the power supply in a short time. Therefore, in the entire processor or one or a plurality of logic circuits that make up the processor, it is possible to stop the power supply even for a short time, so the power consumption can be suppressed.

[0531] In addition, in this embodiment, although the memory element 1200 has been described as an example used for the CPU, the memory element 1200 may be a DSP (Digital Signal Processor), a custom ​​LSIs such as a TAM LSI and a PLD (Programmable Logic Device), etc., and RF-ID (Radio Frequency Identification) can also be applied.

[0532] This embodiment can be implemented in appropriate combination with at least a part of other embodiments described in this specification.

[0533] (Embodiment 7) In this embodiment, a display module and an electronic device having a display device according to an aspect of the present invention will be described with reference to FIG. 20.

[0534] FIGS. 20(A) to 20(G) are diagrams showing electronic devices. These electronic devices include a housing 5000, a display unit 5001, a speaker 5003, an LED lamp 5004, operation keys 500 5 (including a power switch or an operation switch), connection terminals 5006, a sensor 5007 (capable of measuring force, displacement, position, speed, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor or infrared rays), a microphone 5008, etc.

[0535] FIG. 20(A) is a mobile computer, and in addition to the above-described components, it can have a switch 5009, an infrared port 5010, etc. FIG. 20(B) is a portable type image playback device (for example, a DVD playback device) provided with a recording medium, and in addition to the above-described components, it can have a second display unit 5002, a recording medium reading unit 5011, etc. FIG. 20(C) is goggles It is an L-shaped display, and in addition to what has been described above, it can have a second display unit 5002, a support unit 5012, earphones 5013, etc. FIG. 20(D) is a portable gaming machine, and in addition to what has been described above, it can have a recording medium reading unit 5011, etc. FIG. 20(E) is a digital camera with a television reception function, and in addition to what has been described above, it can have an antenna 5014, a shutter button 5015, an imaging unit 5016, etc. FIG. 20(F) is a portable gaming machine, and in addition to what has been described above, it can have a second display unit 5002, a recording medium reading unit 5011, etc. FIG. 20(G) is a portable television receiver, and in addition to what has been described above, it can have a charger 5017 capable of transmitting and receiving signals, etc. The electronic devices shown in FIGS. 20(A) to 20(G) can have various functions. For example,

[0536] functions such as displaying various information (still images, moving images, text images, etc.) on the display unit, touch panel function, function of displaying a calendar, date or time, etc., function of controlling processing by various software (programs), wireless communication function, function of connecting to various computer networks using the wireless communication function, function of transmitting or receiving various data using the wireless communication function, function of reading a program or data recorded on a recording medium and displaying it on the display unit, etc. Furthermore, in an electronic device having a plurality of display units, it can have a function of mainly displaying image information on one display unit and mainly displaying character information on another display unit, or a function of displaying a three-dimensional image by displaying an image considering parallax on a plurality of display units, etc. Furthermore, in an electronic device having an imaging unit, it can have a function of mainly displaying image information on one display unit and mainly displaying character information on another display unit, or a function of displaying a three-dimensional image by displaying an image considering parallax on a plurality of display units, etc. Furthermore, in an electronic device having an imaging unit, it can have functions such as the function of displaying various information (still images, moving images, text images, etc.) on the display unit, touch panel function, function of displaying a calendar, date or time, etc., function of controlling processing by various software (programs), function of reading a program or data recorded on a recording medium and displaying it on the display unit, etc. Furthermore, in an electronic device having a plurality of display units, it can have a function of mainly displaying image information on one display unit and mainly displaying character information on another display unit, or a function of displaying a three-dimensional image by displaying an image considering parallax on a plurality of display units, etc. Furthermore, in an electronic device having an imaging unit, It can have functions such as taking still images, taking videos, automatically or manually correcting the captured images, storing the captured images in a recording medium (external or built into the camera), displaying the captured images on a display unit, and so on. Note that the functions that the electronic device shown in FIGS. 20(A) to 20 (G) can have are not limited to these, and it can have various functions.

[0537] FIG. 20(H) is a smartwatch and has a housing 7302, a display panel 7304, operation buttons 7311, 7312, connection terminals 7313, a band 7321, a buckle 7322, and so on.

[0538] The display panel 7304 mounted on the housing 7302 that also serves as a bezel portion has a non-rectangular display area. Note that the display panel 7304 may also have a rectangular display area. The display panel 7304 can display an icon 7305 representing the time, other icons 7306, and so on.

[0539] Note that the smartwatch shown in FIG. 20(H) can have various functions. For example, it can have functions such as displaying various information (still images, videos, text images, etc.) on the display unit, a touch panel function, a function of displaying a calendar, date, or time, a function of controlling processing by various software (programs), a wireless communication function, a function of connecting to various computer networks using the wireless communication function, a function of transmitting or receiving various data using the wireless communication function, a function of reading a program or data recorded on a recording medium and displaying it on the display unit, and so on.

[0540] ​​​​​​​​​In addition, inside the housing 7302, there can be a speaker, a sensor (capable of measuring force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substances, voice, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, smell, or infrared rays), a microphone, etc. Note that the smartwatch can be manufactured by using a light-emitting element for its display panel 7304.

[0541] Note that this embodiment can be appropriately combined with other embodiments shown in this specification.

[0542] (Embodiment 8) In this embodiment, the configuration of the information processing apparatus according to one aspect of the present invention will be described with reference to FIG. 21.

[0543] FIG. 21 is a diagram for explaining the configuration of an information processing apparatus 200B according to one aspect of the present invention. FIG. 21(A) is a block diagram for explaining the configuration of the information processing apparatus 200B according to one aspect of the present invention, and FIG. 21(B) is a schematic diagram for explaining the state of the information processing apparatus 200B being operated.

[0544] <Configuration Example of Information Processing Apparatus> The information processing apparatus 200B described in this embodiment includes an arithmetic unit 210 that is supplied with position information P1 and supplies image information V, and an input / output device 220 that is supplied with position information P1 and supplies image information V (see FIG. 21(A)).

[0545] And the input / output device 220 includes a display unit 230 that displays image information V and an input unit 240 that supplies position information P1.

[0546] In addition, the input unit 240 has a function of detecting the position of the pointer 19 close to the area overlapping with the display unit 230, and has a function of determining the position information P1 based on the detected position of the pointer 19 (see Fig. 21(B)). In addition, the arithmetic unit 210 has a function of determining the first area 11 based on the position information P1, and has a function of generating the image information V whose luminance is suppressed more than that of other areas in the first area 11. (See Fig. 21(B)).

[0547] In addition, the arithmetic unit 210 has a function of determining the first area 11 in a circular shape based on the position information P1. In addition, the arithmetic unit 210 has a function of generating the image information V whose luminance is suppressed more than that of other areas in the first area 11. It has.

[0548] In addition, the arithmetic unit 210 determines the first area 11 in a circular shape based on the position information P1.

[0549] The information processing apparatus 200B described in this embodiment includes an input unit 240 having a function of supplying the position information P1 of the pointer 19, and an arithmetic unit 210 that determines the first area 11 based on the position information P1 of the pointer 19 and generates the image information V whose luminance is suppressed in the first area 11, and a display unit 230 that displays the image information V. As a result, an image with suppressed luminance can be displayed in the area where the pointer approaches. As a result, a new information processing apparatus excellent in convenience or reliability can be provided. In addition, the arithmetic unit 210 determines the first area 11 based on the position information P1 of the pointer 19, and generates the image information V whose luminance is suppressed in the first area 11. 0, and a display unit 230 that displays the image information V. As a result, an image with suppressed luminance can be displayed in the area where the pointer approaches. As a result, a new information processing apparatus excellent in convenience or reliability can be provided. 0, and a display unit 230 that displays the image information V. As a result, an image with suppressed luminance can be displayed in the area where the pointer approaches. As a result, a new information processing apparatus excellent in convenience or reliability can be provided. As a result, an image with suppressed luminance can be displayed in the area where the pointer approaches. As a result, a new information processing apparatus excellent in convenience or reliability can be provided. As a result, a new information processing apparatus excellent in convenience or reliability can be provided.

[0550] For example, when the information processing apparatus 200B is used in an education, digital signage, or smart television system, etc., when operating close to the display unit 230 so as to be clearly visible from a distance, the display may be made at a luminance that is too bright for the operator. For example, when the information processing apparatus 200B is used in an education, digital signage, or smart television system, etc., when operating close to the display unit 230 so as to be clearly visible from a distance, the display may be made at a luminance that is too bright for the operator. For example, when the information processing appa...

Claims

Claim 1 comprising a base material, a display element, and a detection element, wherein the base material has translucency, the display element has a region overlapping with the base material, the detection element is disposed between the display element and the base material, the display element has a function of displaying on the side where the base material is located, the detection element has a function of detecting an object approaching or contacting on the side where the base material is located, the detection element comprises a first conductive film, a second conductive film between the first conductive film and the base material, and an insulating film between the first conductive film and the second conductive film, and is a touch panel.

Images