Film for forming singulated body

Abstract

To provide a film for forming a singulated body, which is singulated to be formed into a plurality of singulated bodies.SOLUTION: A film for forming a singulated body according to the present disclosure, which is singulated to be formed into a plurality of singulated bodies, has a multilayer structure that comprises a first thermosetting resin layer, a second thermosetting resin layer, and an intermediate layer arranged between the first and second thermosetting resin layers. The intermediate layer is higher in rigidity than the first and second thermosetting resin layers.SELECTED DRAWING: Figure 14

Description

Technical Field

[0001] The present disclosure relates to a method for manufacturing a semiconductor device having a dolmen structure including a substrate, a first chip disposed on the substrate, a plurality of support pieces disposed on the substrate and around the first chip, and a second chip supported by the plurality of support pieces and disposed to cover the first chip. The present disclosure also relates to a method for manufacturing a support piece used in the manufacture of a semiconductor device having a dolmen structure. Note that a dolmen is a type of stone tomb and includes a plurality of support stones and a plate-shaped rock placed thereon. In a semiconductor device having a dolmen structure, the support piece corresponds to the "support stone" and the second chip corresponds to the "plate-shaped rock".

Background Art

[0002] In recent years, in the field of semiconductor devices, high integration, miniaturization, and high speed have been demanded. As one aspect of semiconductor devices, a structure in which a semiconductor chip is stacked on a controller chip disposed on a substrate has attracted attention. For example, Patent Document 1 discloses a semiconductor die assembly including a controller die and a memory die supported by a support member on the controller die. It can be said that the semiconductor assembly 100 illustrated in FIG. 1A of Patent Document 1 has a dolmen structure. That is, the semiconductor assembly 100 includes a package substrate 102, a controller die 103 disposed on its surface, memory dies 106a and 106b disposed above the controller die 103, and support members 130a and 130b that support the memory die 106a.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] Patent Document 1 discloses that a semiconductor material such as silicon can be used as a support member (support piece), and more specifically, a fragment of a semiconductor material obtained by dicing a semiconductor wafer can be used (see

[0012] ,

[0014] of Patent Document 1 and FIG. 2). To manufacture a support piece for a dormen structure using a semiconductor wafer, the following steps are generally required, similar to the manufacture of ordinary semiconductor chips. (1) Step of attaching a back grind tape to a semiconductor wafer (2) Step of back grinding a semiconductor wafer (3) Step of attaching a film having an adhesive layer and an adhesive agent layer (dicing / die bonding integrated film) to a dicing ring and the semiconductor wafer after back grinding disposed therein (4) Step of peeling off the back grind tape from the semiconductor wafer (5) Step of singulating the semiconductor wafer (6) Step of picking up a support piece composed of a laminate of a semiconductor chip and an adhesive piece from the adhesive layer

[0005] The present disclosure provides a method for manufacturing a support piece that can efficiently manufacture a support piece used in the manufacture of a semiconductor device having a dormen structure and can contribute to an improvement in the production efficiency of the semiconductor device. Further, the present disclosure provides a method for efficiently manufacturing a semiconductor device having a dormen structure using the above support piece.

Means for Solving the Problems

[0006] One aspect of the present disclosure relates to a method for manufacturing a support piece used in the manufacture of a semiconductor device having a dormen structure.

[0007] The first aspect of the manufacturing method according to the present disclosure includes the following steps. (A) Step of preparing a laminated film including a base film, an adhesive layer, and a film for forming a support piece in this order (B) Step of forming a plurality of support pieces on the surface of the adhesive layer by singulating the film for forming a support piece (C) Step of picking up the support piece in a state where the support piece is pushed up from the side of the base film by a plurality of needles The film for forming the support piece is any one of the following films. · Film made of a thermosetting resin layer · Film made of a layer obtained by curing at least a part of the thermosetting resin layer · Multilayer film having a thermosetting resin layer and a resin layer having higher rigidity than the thermosetting resin layer · Multilayer film having a thermosetting resin layer and a metal layer having higher rigidity than the thermosetting resin layer

[0008] The second aspect of the manufacturing method according to the present disclosure includes the following steps. (A) Step of preparing a laminated film including a base film, an adhesive layer, and a film for forming a support piece in this order (B) Step of forming a plurality of support pieces on the surface of the adhesive layer by separating the film for forming the support piece into individual pieces (C) Step of picking up the support piece in a state where the support piece is pushed up from the side of the base film by a member having a flat tip surface The film for forming the support piece is any one of the following films. · Film made of a thermosetting resin layer · Film made of a layer obtained by curing at least a part of the thermosetting resin layer · Multilayer film having a thermosetting resin layer and a resin layer having higher rigidity than the thermosetting resin layer · Multilayer film having a thermosetting resin layer and a metal layer having higher rigidity than the thermosetting resin layer

[0009] In the present disclosure, the resin layer included in the film for forming the support piece is, for example, a polyimide layer. The resin layer is made of a material different from, for example, the thermosetting resin layer. The metal layer included in the film for forming the support piece is, for example, a copper layer or an aluminum layer. Note that the rigidity of the thermosetting resin layer after thermosetting may be lower or higher than the rigidity of the resin layer or the metal layer. Rigidity means the ability of an object to withstand breakage against bending or twisting.

[0010] In the manufacturing method according to the present disclosure, a support piece obtained by fragmenting a support piece forming film is used. Thereby, compared with the conventional manufacturing method using a fragment of a semiconductor material obtained by dicing a semiconductor wafer as a support piece, the process of manufacturing the support piece can be simplified. That is, conventionally, the above steps (1) to (6) were required, but since the support piece forming film does not include a semiconductor wafer, steps (1), (2), and (4) related to back grinding of the semiconductor wafer can be omitted. In addition, since an expensive semiconductor wafer is not used compared with a resin material, the cost can also be reduced. Note that since the thermosetting resin layer has adhesiveness to other members (for example, a substrate), it is not necessary to separately provide an adhesive layer or the like on the support piece.

[0011] According to the study by the present inventors, the pick-up property of the support piece from the adhesive layer depends on the ease of peeling at the interface between the support piece and the adhesive layer (hereinafter referred to as "interface peeling") and the ease of peeling of the edge of the support piece from the adhesive layer (hereinafter referred to as "edge peeling"). In the step (C) of the manufacturing method according to the first aspect, by pushing up the support piece with a plurality of needles, interface peeling between the support piece and the adhesive layer is likely to occur, and excellent pick-up property of the support piece from the adhesive layer can be achieved.

[0012] The manufacturing method according to the second aspect is based on the findings obtained by the present inventors from the following phenomenon. That is, for example, even after forming a plurality of support pieces on the surface of an ultraviolet-curing type adhesive layer and then reducing the adhesive force of the adhesive layer by ultraviolet irradiation, a phenomenon occurs in which sufficient pick-up property cannot be achieved in the pick-up process of the support pieces. To improve this, the present inventors examined the type of lifting device used in the pick-up process. As a result, it was found that a lifting device provided with a member having a flat tip surface is effective in improving the peelability of the edge of the support piece. By lifting the support piece from the side of the base film with a flat tip surface, it is possible to suppress the formation of marks caused by lifting on the support piece compared to the case of lifting the support piece with a plurality of needles, and it is possible to efficiently peel the edge of the support piece from the adhesive layer. The situation where the edge of the support piece is difficult to peel occurs not only when an ultraviolet-curing type adhesive layer is employed, but also when a pressure-sensitive type adhesive layer is employed. For example, when the film for forming the support piece is separated into individual pieces, or when a part of the base film beyond the film for forming the support piece and the adhesive layer is also cut.

[0013] When the film for forming the support piece is a film made of a thermosetting resin layer or a film made of a layer obtained by curing at least a part of the thermosetting resin layer, from the viewpoint of achieving even better pick-up performance, the step (B) may include, in this order, a step of forming a cut up to the middle in the thickness direction of the film for forming the support piece, and a step of fragmenting the cooled film for forming the support piece by expansion. On the other hand, when the film for forming the support piece is a multilayer film having a thermosetting resin layer and a resin layer or a metal layer having higher rigidity than the thermosetting resin layer, from the same viewpoint, in the laminated film prepared in the step (A), a thermosetting resin layer is positioned between the resin layer or the metal layer and the adhesive layer, and the step (B) may include, in this order, a step of cutting the resin layer or the metal layer of the film for forming the support piece and forming a cut up to the middle in the thickness direction of the thermosetting resin layer, and a step of fragmenting the cooled film for forming the support piece by expansion. In the step (B), after half-cutting the thermosetting resin layer and then fragmenting the thermosetting resin layer by cool expansion, the edge of the adhesive piece does not enter the adhesive layer, so that even higher pick-up performance can be achieved.

[0014] One aspect of the present disclosure relates to a method for manufacturing a semiconductor device having a dolmen structure. This manufacturing method includes the following steps. (D) A step of disposing a first chip on a substrate (E) A step of disposing a plurality of support pieces manufactured by the manufacturing method according to the present disclosure around the first chip or around the region where the first chip is to be disposed on the substrate (F) A step of preparing an adhesive piece-attached chip including a second chip and an adhesive piece provided on one surface of the second chip (G) A step of constructing a dolmen structure by disposing the adhesive piece-attached chip on the surfaces of the plurality of support pieces

[0015] (D) process and (E) process may be carried out in either order. When (D) process is carried out first, in (E) process, a plurality of support pieces may be arranged on the substrate around the first chip. On the other hand, when (E) process is carried out first, in (E) process, a plurality of support pieces are arranged on the substrate around the region where the first chip is to be arranged, and then, in (D) process, the first chip may be arranged in the said region.

Effect of the Invention

[0016] According to the present disclosure, a method for manufacturing support pieces used in the manufacture of a semiconductor device having a dormen structure can be efficiently manufactured, and a method for manufacturing support pieces that can contribute to the improvement of the production efficiency of semiconductor devices is provided. Further, according to the present disclosure, a method for efficiently manufacturing a semiconductor device having a dormen structure using the said support pieces is provided.

Brief Description of the Drawings

[0017]

Figure 1

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Figure 8

Figure 9

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Figure 14

Figure 15

Embodiments for Carrying out the Invention

[0018] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. However, the present invention is not limited to the following embodiments. In this specification, “(meth)acrylic acid” means acrylic acid or methacrylic acid, and “(meth)acrylate” means acrylate or the corresponding methacrylate. “A or B” means that either A or B may be included, or both may be included.

[0019] In this specification, the term “layer” includes, in addition to a structure formed over the entire surface when observed in a plan view, a structure formed partially. Also, in this specification, the term “step” includes not only an independent step but also a step in a case where it cannot be clearly distinguished from other steps as long as the intended action of the step is achieved. Also, a numerical range indicated using “~” indicates a range including the numerical values described before and after “~” as the minimum value and the maximum value, respectively.

[0020] In this specification, the content of each component in the composition means the total amount of the plurality of substances present in the composition that correspond to each component in the composition, unless otherwise specified when there are a plurality of substances corresponding to each component in the composition. Also, exemplary materials may be used alone or in combination of two or more, unless otherwise specified. Also, in the numerical ranges described stepwise in this specification, the upper limit value or the lower limit value of a numerical range at a certain step may be replaced with the upper limit value or the lower limit value of a numerical range at another step. Also, in the numerical ranges described in this specification, the upper limit value or the lower limit value of the numerical range may be replaced with the value shown in the examples.

[0021] (Semiconductor device) FIG. 1 is a cross-sectional view schematically showing an example of a semiconductor device having a dorn structure. The semiconductor device 100 shown in this figure includes a substrate 10, a chip T1 (first chip) disposed on the surface of the substrate 10, a plurality of support pieces Dc disposed on the surface of the substrate 10 and around the chip T1, a chip T2 (second chip) disposed above the chip T1, an adhesive piece Tc sandwiched between the chip T2 and the plurality of support pieces Dc, chips T3 and T4 stacked on the chip T2, a plurality of wires w electrically connecting electrodes (not shown) on the surface of the substrate 10 and the chips T1 to T4, respectively, and a sealing material 50 filled in a gap between the chip T1 and the chip T2.

[0022] In the present embodiment, a dorn structure is formed on the substrate 10 by the plurality of support pieces Dc, the chip T2, and the adhesive piece Tc located between the support piece Dc and the chip T2. The chip T1 is separated from the adhesive piece Tc. By appropriately setting the thickness of the support piece Dc, a space for the wire w connecting the upper surface of the chip T1 and the substrate 10 can be secured. Since the chip T1 is separated from the adhesive piece Tc, a short circuit of the wire w caused by the upper portion of the wire w connected to the chip T1 contacting the chip T2 can be prevented. Further, since there is no need to embed a wire in the adhesive piece Tc in contact with the chip T2, there is an advantage that the adhesive piece Tc can be made thin.

[0023] As shown in FIG. 1, the adhesive piece Tc between the chip T1 and the chip T2 covers the area of the chip T2 facing the chip T1 and continuously extends from the area to the peripheral side of the chip T2. That is, one adhesive piece Tc covers the area of the chip T2 and is interposed between the chip T2 and the plurality of support pieces to bond them. Note that FIG. 1 illustrates a mode in which the adhesive piece Tc is provided to cover the entire one surface (lower surface) of the chip T2. However, since the adhesive piece Tc may shrink during the manufacturing process of the semiconductor device 100, it is sufficient that the entire one surface (lower surface) of the chip T2 is substantially covered. For example, there may be a portion of the periphery of the chip T2 that is not covered by the adhesive piece Tc. The lower surface of the chip T2 in FIG. 1 corresponds to the back surface of the chip. In recent years, the back surface of the chip often has irregularities. By covering substantially the entire back surface of the chip T2 with the adhesive piece Tc, the occurrence of cracks or fractures in the chip T2 can be suppressed.

[0024] The substrate 10 may be an organic substrate or a metal substrate such as a lead frame. From the viewpoint of suppressing the warpage of the semiconductor device 100, the thickness of the substrate 10 is, for example, 90 to 300 μm, and may be 90 to 210 μm.

[0025] The chip T1 is, for example, a controller chip, and is bonded to the substrate 10 by the adhesive piece T1c and electrically connected to the substrate 10 by the wire w. The shape of the chip T1 in plan view is, for example, rectangular (square or rectangular). The length of one side of the chip T1 is, for example, 5 mm or less, and may be 2 to 5 mm or 1 to 5 mm. The thickness of the chip T1 is, for example, 10 to 150 μm, and may be 20 to 100 μm.

[0026] Chip T2 is, for example, a memory chip and is adhered onto a support piece Dc via an adhesive piece Tc. In plan view, chip T2 has a larger size than chip T1. The shape of chip T2 in plan view is, for example, rectangular (square or rectangle). The length of one side of chip T2 is, for example, 20 mm or less, and may be 4 - 20 mm or 4 - 12 mm. The thickness of chip T2 is, for example, 10 - 170 μm, and may be 20 - 120 μm. Note that chips T3 and T4 are also, for example, memory chips and are adhered onto chip T2 via adhesive piece Tc. The length of one side of chips T3 and T4 may be the same as that of chip T2, and the thickness of chips T3 and T4 may also be the same as that of chip T2.

[0027] Support piece Dc serves as a spacer that forms a space around chip T1. Support piece Dc is made of a cured product of a thermosetting resin composition. As shown in FIG. 2(a), two support pieces Dc (shape: rectangle) may be arranged at positions separated from both sides of chip T1, or as shown in FIG. 2(b), one support piece Dc (shape: square, a total of 4 pieces) may be arranged at positions corresponding to the corners of chip T1. The length of one side of support piece Dc in plan view is, for example, 20 mm or less, and may be 1 - 20 mm or 1 - 12 mm. The thickness (height) of support piece Dc is, for example, 10 - 180 μm, and may be 20 - 120 μm.

[0028] <First Embodiment> (Manufacturing Method of Support Piece) The manufacturing method of the support piece according to this embodiment includes the following steps. (A) Preparing a support piece forming laminated film 20 (hereinafter, sometimes referred to as "laminated film 20") that includes a base film 1, an adhesive layer 2 having a first surface f1 facing the base film 1 and a second surface f2 on the opposite side thereof, and a support piece forming film D disposed so as to cover the central portion of the second surface f2 of the adhesive layer 2 in this order (see FIGS. 3(a) and 3(b)) (B) Forming a plurality of support pieces on the second surface f2 of the adhesive layer 2 by individualizing the support piece forming film D (see FIG. 5(b)) (C) Step of picking up support piece Da in a state where the support piece is pushed up from the side of the base film by a plurality of needles N (see Fig. 6(b)) Note that the support piece Dc shown in Fig. 1 is after the thermosetting resin composition has cured. On the other hand, the support piece Da is in a state before the thermosetting resin composition is completely cured.

[0029] [Step (A)] The laminated film 20 includes a base film 1, an adhesive layer 2, and a support piece forming film D. The base film 1 is, for example, a polyethylene terephthalate film (PET film) or a polyolefin film. As the base film 1, a film having heat shrinkability may be used. The adhesive layer 2 has a first surface f1 facing the base film 1 and a second surface f2 on the opposite side thereof. The adhesive layer 2 is formed in a circular shape by punching or the like (see Fig. 3(a)). The adhesive layer 2 is made of a pressure-sensitive adhesive. Note that the adhesive layer 2 may or may not contain a resin having a carbon-carbon double bond with photoreactivity. For example, the adhesive layer 2 may have its adhesiveness in a predetermined region reduced by irradiating ultraviolet rays to the region, or for example, a resin having a carbon-carbon double bond with photoreactivity may remain.

[0030] The support piece forming film D is formed in a circular shape by punching or the like and has a diameter smaller than that of the adhesive layer 2 (see Fig. 3(a)). The support piece forming film D is made of a thermosetting resin composition. The thermosetting resin composition constituting the support piece forming film D can be in a fully cured product (C stage) state through a semi-cured (B stage) state by subsequent curing treatment. The thermosetting resin composition includes an epoxy resin, a curing agent, and an elastomer (for example, an acrylic resin), and further includes an inorganic filler, a curing accelerator, etc. as required. Details of the thermosetting resin composition constituting the support piece forming film D will be described later.

[0031] The laminated film 20 can be produced, for example, by laminating a first laminated film having a base film 1 and an adhesive layer 2 on its surface and a second laminated film having a cover film 3 and a film D for forming support pieces on its surface (see FIG. 4). The first laminated film is obtained through a process of forming an adhesive layer on the surface of the base film 1 by coating and a process of processing the adhesive layer into a predetermined shape (for example, circular) by punching or the like. The second laminated film is obtained through a process of forming a film for forming support pieces on the surface of the cover film 3 (for example, a PET film or a polyethylene film) by coating and a process of processing the film for forming support pieces into a predetermined shape (for example, circular) by punching or the like. When using the laminated film 20, the cover film 3 is peeled off at an appropriate timing.

[0032] [(B) Process] As shown in FIG. 5(a), a dicing ring DR is attached to the laminated film 20. That is, the dicing ring DR is attached to the peripheral region 2a of the adhesive layer 2 so that the film D for forming support pieces is disposed inside the dicing ring DR. The film D for forming support pieces is diced into individual pieces (see FIG. 5(b)). Thereby, a large number of support pieces Da are obtained from the film D for forming support pieces. Then, as shown in FIG. 5(c), tension is applied to the base film 1 by pushing up the inner region 1a of the dicing ring DR in the base film 1 with a ring R. Thereby, the interval between adjacent support pieces Da can be widened. It is preferable that the cut for individualization is formed up to the outer edge of the film D for forming support pieces. The diameter of the film D for forming support pieces may be, for example, 300 to 310 mm or 300 to 305 mm. The shape of the film D for forming support pieces in plan view is not limited to the circular shape shown in FIG. 3(a) and may be rectangular (square or rectangular).

[0033] When a film having heat shrinkability is used as the base film 1, after the step (B), the inner region 1a of the dicing ring DR in the base film 1 may be heated to shrink the inner region 1a. FIG. 6(a) is a cross-sectional view schematically showing a state in which the inner region 1a is heated by the blow of the heater H. By shrinking the inner region 1a annularly to apply tension to the base film 1, it is possible to maintain a state in which the interval between adjacent support pieces Da is widened. Thereby, the occurrence of pickup errors can be further suppressed, and the visibility of the support piece Da in the pickup process can be improved.

[0034] [(Step (C))] As shown in FIG. 6(b), the support piece Da is pushed up by a pushing-up device including a plurality of needles N. As the pushing-up device, for example, DB-830plus+ (trade name) manufactured by FASFORD TECHNOLOGY can be used. By pushing up the support piece Da from the side of the base film 1 with a plurality of needles N, a local pressing force can be applied to the interface between the adhesive layer 2 and the support piece Da (see FIG. 7). Thereby, the interface peeling between the two can proceed efficiently, and excellent pick-up performance can be achieved. Note that the tip of the needle N may be rounded or flat from the viewpoint of suppressing the formation of marks due to the pushing-up remaining on the support piece Da.

[0035] The pushed-up support piece Da is sucked and picked up by the suction collet C. As the suction collet C, for example, RUBBER TIP RHAH-CA010005001 (trade name) manufactured by MICRO-MECHANICS can be used. Note that the curing reaction of the thermosetting resin may be advanced by heating the film D for forming the support piece before dicing or the support piece Da before pushing up. By appropriately curing the support piece Da when picking up, even better pick-up performance can be achieved.

[0036] (Method for manufacturing a semiconductor device) A method for manufacturing the semiconductor device 100 will be described. The manufacturing method according to the present embodiment includes the following steps. (D) Step of arranging the first chip T1 on the substrate 10 (E) Step of arranging a plurality of support pieces Da around the first chip T1 on the substrate 10 (see Fig. 8) (F) Step of preparing the chip T2a with an adhesive piece, which includes the second chip T2 and the adhesive piece Ta provided on one surface of the second chip T2 (see Fig. 9) (G) Step of constructing the dorman structure by arranging the chip T2a with an adhesive piece on the surfaces of the plurality of support pieces Dc (see Fig. 10) (H) Step of sealing the gap between the chip T1 and the chip T2 with the sealing material 50 (see Fig. 1)

[0037] [(D) Process] (D) The process is a process of arranging the first chip T1 on the substrate 10. For example, first, the chip T1 is arranged at a predetermined position on the substrate 10 via the adhesive layer T1c. Then, the chip T1 is electrically connected to the substrate 10 by the wire w. (D) The process may be performed before the (E) process, and may also be before the (A) process, between the (A) process and the (B) process, between the (B) process and the (C) process, or between the (C) process and the (E) process.

[0038] [(E) Process] (E) The process is a process of arranging a plurality of support pieces Da around the first chip T1 on the substrate 10. Through this process, the structure 30 shown in Fig. 8 is fabricated. The structure 30 includes the substrate 10, the chip T1 arranged on its surface, and a plurality of support pieces Da. The arrangement of the support pieces Da may be performed by a crimping process. The crimping process is preferably performed at a condition of, for example, 80 - 180 °C and 0.01 - 0.50 MPa for 0.5 - 3.0 seconds. Note that the support pieces Da may be completely cured to become the support pieces Dc at the time of the (E) process, or may not be completely cured at this time. It is preferable that the support pieces Da are completely cured to become the support pieces Dc before the start of the (G) process.

[0039] [(F) Process] (F) step is a step of preparing an adhesive-attached chip T2a shown in FIG. 9. The adhesive-attached chip T2a includes a chip T2 and an adhesive piece Ta provided on one surface thereof. The adhesive-attached chip T2a can be obtained, for example, by using a semiconductor wafer and a dicing and die bonding integrated film through a dicing process and a pickup process.

[0040] [(G) step] (G) step is a step of disposing the adhesive-attached chip T2a above the chip T1 so that the adhesive piece Ta contacts the upper surfaces of the plurality of support pieces Dc. Specifically, the chip T2 is pressure-bonded to the upper surfaces of the support pieces Dc via the adhesive piece Ta. This pressure-bonding treatment is preferably carried out, for example, under the conditions of 80 to 180 °C and 0.01 to 0.50 MPa for 0.5 to 3.0 seconds. Next, the adhesive piece Ta is cured by heating. This curing treatment is preferably carried out, for example, under the conditions of 60 to 175 °C and 0.01 to 1.0 MPa for 5 minutes or more. Thereby, the adhesive piece Ta is cured to become an adhesive piece Tc. Through this step, a dolmen structure is constructed on the substrate 10 (see FIG. 10). Since the chip T1 is separated from the adhesive-attached chip T2a, it is possible to prevent a short circuit of the wire w caused by the upper part of the wire w contacting the chip T2. In addition, since there is no need to embed a wire in the adhesive piece Ta that contacts the chip T2, there is an advantage that the adhesive piece Ta can be made thinner.

[0041] (After the (G) step and before the (H) step, a chip T3 is disposed on the chip T2 via an adhesive piece, and further, a chip T4 is disposed on the chip T3 via an adhesive piece. The adhesive piece may be the same thermosetting resin composition as the above-described adhesive piece Ta and becomes an adhesive piece Tc by heat curing (see FIG. 1). On the other hand, the chips T2, T3, and T4 and the substrate 10 are electrically connected to each other by wires w. Note that the number of chips laminated above the chip T1 is not limited to three in this embodiment and may be set as appropriate.

[0042] [(H) step] (Step (H) is a step of sealing the gap between the chip T1 and the chip T2 with the sealing material 50. Through this step, the semiconductor device 100 shown in FIG. 1 is completed.)

[0043] (Thermosetting resin composition constituting the support piece forming film) The thermosetting resin composition constituting the support piece forming film D includes, as described above, an epoxy resin, a curing agent, and an elastomer, and further includes an inorganic filler, a curing accelerator, etc. as necessary. According to the study by the present inventors, it is preferable that the support piece Da and the cured support piece Dc have the following characteristics.) ·Characteristic 1: It is difficult for displacement to occur when the support piece Da is thermocompression-bonded to a predetermined position of the substrate 10 (the melt viscosity of the support piece Da at 120°C is, for example, 4300 to 50000 Pa·s or 5000 to 40000 Pa·s.) ·Characteristic 2: The support piece Dc exhibits stress relaxation properties within the semiconductor device 100 (the thermosetting resin composition contains an elastomer (rubber component).) ·Characteristic 3: The adhesive strength with the adhesive piece Tc of the chip with the adhesive piece is sufficiently high (the die shear strength of the support piece Dc with respect to the adhesive piece Tc is, for example, 2.0 to 7.0 Mpa or 3.0 to 6.0 Mpa.) ·Characteristic 4: The shrinkage rate associated with curing is sufficiently small.) ·Characteristic 5: The visibility of the support piece Da by the camera in the pickup process is good (the thermosetting resin composition contains, for example, a coloring agent.) ·Characteristic 6: The support piece Dc has sufficient mechanical strength.)

[0044] [Epoxy resin] The epoxy resin is not particularly limited as long as it cures to have an adhesive effect. Bifunctional epoxy resins such as bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, novolac type epoxy resins such as phenol novolac type epoxy resin, cresol novolac type epoxy resin, etc. can be used. Also, generally known ones such as polyfunctional epoxy resins, glycidylamine type epoxy resins, heterocyclic ring-containing epoxy resins or alicyclic epoxy resins can be applied. These may be used alone or in combination of two or more.

[0045] [Hardener] Examples of the hardener include phenolic resins, ester compounds, aromatic amines, aliphatic amines and acid anhydrides. Among these, from the viewpoint of achieving high die shear strength, phenolic resins are preferred. Examples of commercially available phenolic resins include LF-4871 (trade name, BPA novolac type phenolic resin) manufactured by DIC Corporation, HE-100C-30 (trade name, phenylalkyl type phenolic resin) manufactured by Air Water Inc., Phenolite KA and TD series manufactured by DIC Corporation, Mirex XLC-series and XL-series (e.g., Mirex XLC-LL) manufactured by Mitsui Chemicals, Inc., HE series (e.g., HE100C-30) manufactured by Air Water Inc., MEHC-7800 series (e.g., MEHC-7800-4S) manufactured by Meiwa Kasei Co., Ltd., JDPP series manufactured by JEF Chemical Co., Ltd. These may be used alone or in combination of two or more.

[0046] From the viewpoint of achieving high die shear strength, the compounding amounts of the epoxy resin and the phenolic resin are preferably such that the equivalent ratio of the epoxy equivalent and the hydroxyl equivalent is 0.6 to 1.5, more preferably 0.7 to 1.4, and even more preferably 0.8 to 1.3, respectively. When the compounding ratio is within the above range, it is easy to achieve both high curability and fluidity at a sufficiently high level.

[0047] [Elastomer] Examples of the elastomer include acrylic resin, polyester resin, polyamide resin, polyimide resin, silicone resin, polybutadiene, acrylonitrile, epoxy-modified polybutadiene, maleic anhydride-modified polybutadiene, phenol-modified polybutadiene, and carboxy-modified acrylonitrile.

[0048] From the viewpoint of achieving high die shear strength, an acrylic resin is preferred as the elastomer. Further, an acrylic resin such as an epoxy group-containing (meth)acrylic copolymer obtained by polymerizing a functional monomer having an epoxy group or a glycidyl group such as glycidyl acrylate or glycidyl methacrylate as a crosslinkable functional group is more preferred. Among acrylic resins, an epoxy group-containing (meth)acrylic acid ester copolymer and an epoxy group-containing acrylic rubber are preferred, and an epoxy group-containing acrylic rubber is more preferred. The epoxy group-containing acrylic rubber is a rubber having an epoxy group, mainly composed of a copolymer of butyl acrylate and acrylonitrile, a copolymer of ethyl acrylate and acrylonitrile, etc. Note that the acrylic resin may have crosslinkable functional groups such as alcoholic or phenolic hydroxyl groups and carboxyl groups in addition to the epoxy group.

[0049] Commercially available products of acrylic resin include SG-70L, SG-708-6, WS-023 EK30, SG-280 EK23, SG-P3 solvent-changed product (trade name, acrylic rubber, weight average molecular weight: 800,000, Tg: 12 °C, solvent is cyclohexanone) manufactured by Nagase ChemteX Corporation, etc.

[0050] The glass transition temperature (Tg) of the acrylic resin is preferably -50 to 50°C, more preferably -30 to 30°C, from the viewpoint of achieving high die shear strength. The weight average molecular weight (Mw) of the acrylic resin is preferably 100,000 to 3,000,000, more preferably 500,000 to 2,000,000, from the viewpoint of achieving high die shear strength. Here, Mw means a value measured by gel permeation chromatography (GPC) and converted using a calibration curve with standard polystyrene. Note that by using an acrylic resin with a narrow molecular weight distribution, it tends to be possible to form a highly elastic adhesive sheet.

[0051] The amount of the acrylic resin contained in the thermosetting resin composition is preferably 10 to 200 parts by mass, more preferably 20 to 100 parts by mass, with respect to 100 parts by mass in total of the epoxy resin and the epoxy resin curing agent, from the viewpoint of achieving high die shear strength.

[0052] [Inorganic filler] Examples of the inorganic filler include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, boron nitride, crystalline silica, and amorphous silica. These may be used alone or in combination of two or more.

[0053] The average particle size of the inorganic filler is preferably 0.005 μm to 1.0 μm, more preferably 0.05 to 0.5 μm, from the viewpoint of achieving high die shear strength. The surface of the inorganic filler is preferably chemically modified, from the viewpoint of achieving high die shear strength. Examples of materials suitable for chemically modifying the surface include silane coupling agents. Examples of the types of functional groups of the silane coupling agent include vinyl group, acryloyl group, epoxy group, mercapto group, amino group, diamino group, alkoxy group, and ethoxy group.

[0054] From the viewpoint of achieving high die shear strength, the content of the inorganic filler is preferably 20 to 200 parts by mass, more preferably 30 to 100 parts by mass, based on 100 parts by mass of the resin component of the thermosetting resin composition.

[0055] [Curing accelerator] Examples of the curing accelerator include imidazoles and their derivatives, organic phosphorus compounds, secondary amines, tertiary amines, and quaternary ammonium salts. From the viewpoint of achieving high die shear strength, imidazole-based compounds are preferred. Examples of imidazoles include 2-methylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole, and the like. These may be used alone or in combination of two or more.

[0056] From the viewpoint of achieving high die shear strength, the content of the curing accelerator in the thermosetting resin composition is preferably 0.04 to 3 parts by mass, more preferably 0.04 to 0.2 parts by mass, based on 100 parts by mass of the total of the epoxy resin and the epoxy resin curing agent.

[0057] <Second Embodiment> A second embodiment of the method for manufacturing the support piece Da will be described. In the first embodiment, in the step (C), an aspect of using a plurality of needles was exemplified, but instead of the plurality of needles, a member having a flat tip surface may be used. Hereinafter, the differences mainly from the first embodiment will be described.

[0058] The adhesive layer 2 in this embodiment is made of an ultraviolet-curing adhesive. That is, the adhesive layer 2 has the property that its adhesiveness decreases when irradiated with ultraviolet rays. In this case, as shown in FIG. 5(b), after obtaining a number of support pieces Da by dicing the support-piece forming film D, the adhesive layer 2 is irradiated with ultraviolet rays. Thereby, the adhesive force between the adhesive layer 2 and the support piece Da is decreased. After the ultraviolet irradiation, the tension is applied to the base film 1 using the ring R and the heater H to widen the interval between the adjacent support pieces Da (see FIGS. 5(c) and 6(a)).

[0059] In the step (C) of this embodiment, as shown in FIG. 11, the support piece Da is pushed up by a pushing-up device including a member P having a flat tip surface F. As the pushing-up device, for example, DB-830plus+ (trade name) manufactured by FASFORD TECHNOLOGY can be used. Note that the support piece Da may be pushed up using the three-stage pushing-up device shown in FIGS. 12(a) to 12(c). The three-stage pushing-up device includes a first cylindrical member P1, a second cylindrical member P2 housed therein, and a member P housed therein. All of these tip surfaces F1, F2, and F are flat, and are flush in a state where the tip surface F1 of the first cylindrical member P1 is in contact with the base film 1 (see FIG. 12(a)). Then, the support piece Da is further pushed up by the second cylindrical member P2 protruding from the first cylindrical member P1 (see FIG. 12(b)). Next, the central portion of the support piece Da is further pushed up by the member P protruding from the second cylindrical member P2 (see FIG. 12(c)). By pushing up the support piece Da from the side of the base film 1 with such a flat surface, the edge of the support piece Da can be efficiently peeled off from the adhesive layer 2, and thereby excellent pick-up property can be achieved.

[0060] The method of pushing up the support piece Da by the three-stage pushing-up device is not limited to the above. For example, first, the support piece Da is pushed up through the base material film 1 with the front end surfaces F1, F2, and F flush. Then, after lowering the first cylindrical member P1, the second cylindrical member P2 may be lowered. According to this method, it is possible to pick up the support piece Da with a relatively low push-up. Note that the number of stages of the pushing-up device is not limited to three stages, and at least two stages are sufficient. That is, the multi-stage pushing-up device may include a cylindrical member and a columnar member P accommodated therein, as long as these are independently driven in the vertical direction.

[0061] <Third Embodiment> Hereinafter, a third embodiment of the method for manufacturing the support piece Da will be described. In the above embodiment, the case where the support piece Da is formed by completely cutting the support piece forming film D was exemplified. However, in the step (B), after the support piece forming film D is half-cut, the base material film 1 may be cooled and expanded to form the support piece Da. Hereinafter, the differences from the above embodiment will be mainly described.

[0062] After attaching the dicing ring DR to the laminated film 20 (see Fig. 5(a)), as shown in Fig. 13(a), a cut G is formed up to the middle in the thickness direction of the support piece forming film D. Thereby, a laminated film 25 having the half-cut support piece forming film D is obtained. The cut G may be formed by, for example, a blade or a laser. The depth of the cut G may be 25 to 50, or may be 30 to 40, assuming the thickness of the support piece forming film D is 100. The cut G is formed in a grid pattern (see Fig. 13(b)). Note that the pattern of the cut G is not limited to the grid pattern, and any pattern corresponding to the shape of the support piece Da is acceptable.

[0063] Thereafter, for example, by performing cool expansion under temperature conditions of -15 to 0°C, the film D for forming support pieces is individualized. Thereby, a large number of support pieces Da are obtained from the film D for forming support pieces. Tension may be applied to the base film 1 by pushing up the inner region 1a of the dicing ring DR in the base film 1 with the ring R (see Fig. 5(c)). In the step (B), after the film D for forming support pieces is half-cut, the film D for forming support pieces is individualized by cool expansion, so that the edges of the support pieces Da do not enter the adhesive layer 2, and excellent pick-up properties can be achieved.

[0064] As described above, the embodiments of the present disclosure have been described in detail, but the present invention is not limited to the above embodiments. For example, in the above first embodiment, the laminated film 20 having the pressure-sensitive adhesive layer 2 is exemplified, but the adhesive layer 2 may be an ultraviolet curable type. When the adhesive layer 2 according to the third embodiment is of the ultraviolet curable type, as described above, since the edges of the support pieces Da do not enter the adhesive layer 2, excellent pick-up properties can be achieved even when the adhesive layer 2 is cured by ultraviolet irradiation.

[0065] In the above second embodiment, the laminated film 20 having the ultraviolet curable adhesive layer 2 is exemplified, but the adhesive layer 2 may be of the pressure-sensitive type. Note that the pressure-sensitive adhesive layer may or may not contain a resin having a carbon-carbon double bond having photoreactivity. For example, the adhesive layer may be one in which the adhesiveness of a predetermined region thereof is reduced by irradiating the region with ultraviolet light, and for example, a resin having a carbon-carbon double bond having photoreactivity may remain.

[0066] In the above-described embodiment, as shown in FIG. 3(b), the laminated film 20 for forming a support piece including the film D for forming a support piece made of a thermosetting resin layer was exemplified. However, the laminated film for forming a support piece may be made of a layer obtained by curing at least a part of the thermosetting resin layer. Further, the laminated film for forming a support piece may include a multilayer film having a thermosetting resin layer and a resin layer or a metal layer having higher rigidity than the thermosetting resin layer. The laminated film 20A for forming a support piece shown in FIG. 14(a) has a two-layer film D2 (film for forming a support piece) having a thermosetting resin layer 5 and a resin layer 6 having higher rigidity than the thermosetting resin layer. That is, in the laminated film 20A for forming a support piece, the thermosetting resin layer 5 is disposed between the adhesive layer 2 and the outermost resin layer 6. The thermosetting resin layer 5 is made of the thermosetting resin composition constituting the film D for forming a support piece according to the first embodiment. The thickness of the resin layer 6 is, for example, 5 to 100 μm, and may be 10 to 90 μm or 20 to 80 μm. The resin layer 6 is, for example, a polyimide layer.

[0067] The laminated film 20B for forming a support piece shown in FIG. 14(b) has a three-layer film D3 (film for forming a support piece) having a resin layer 6 having higher rigidity than the thermosetting resin layer and two thermosetting resin layers 5a and 5b sandwiching the resin layer 6. In the laminated film 20B for forming a support piece, the three-layer film D3 is disposed on the surface of the adhesive layer 2.

[0068] Similar to the first embodiment, the two-layer film D2 may be completely cut by, for example, a blade or a laser, or similar to the third embodiment, after being half-cut, it may be fragmented by cool expansion. FIG. 15(a) is a cross-sectional view schematically showing the state where the two-layer film D2 is half-cut. As shown in FIG. 15(a), the resin layer 6 of the two-layer film D2 may be cut and a cut G may be formed up to the middle in the thickness direction of the thermosetting resin layer 5. Thereby, a laminated film 25A having the half-cut two-layer film D2 is obtained. A plurality of resin pieces 6p are formed by fragmenting the resin layer 6. When the thickness of the thermosetting resin layer 5 is 100, the cut G may cut the thermosetting resin layer 5 with a thickness of 10 to 75 (more preferably 25 to 50).

[0069] Similar to the first and second embodiments, the three-layer film D3 may be completely cut by, for example, a blade or a laser, or similar to the third embodiment, after being half-cut, it may be fragmented by cool expansion. FIG. 15(b) is a cross-sectional view schematically showing the state where the three-layer film D3 is half-cut. As shown in FIG. 15(b), the thermosetting resin layer 5a and the resin layer 6 of the three-layer film D3 may be cut and a cut G may be formed up to the middle in the thickness direction of the thermosetting resin layer 5b. Thereby, a laminated film 25B having the half-cut three-layer film D3 is obtained. A plurality of adhesive pieces 5p are formed by fragmenting the thermosetting resin layer 5a, and a plurality of resin pieces 6p are formed by fragmenting the resin layer 6. When the thickness of the thermosetting resin layer 5b is 100, the cut G may cut the thermosetting resin layer 5b with a thickness of 10 to 75 (more preferably 25 to 50).

[0070] The laminated films 20A and 20B for forming support pieces include a resin layer 6 having higher rigidity than the thermosetting resin layer 5, so that excellent pick-up properties can be achieved without performing the thermosetting treatment of the thermosetting resin layer 5 after being fragmented by dicing.

[0071] In the laminated films 20A and 20B for forming the support pieces, instead of the resin layer 6, a metal layer (for example, a copper layer or an aluminum layer) higher than the thermosetting resin layer may be employed. The thickness of the metal layer is, for example, 5 to 100 μm, and may be 10 to 90 μm or 20 to 80 μm. Since the laminated films 20A and 20B for forming the support pieces contain a metal layer, in addition to excellent pick-up properties, excellent visibility of the support pieces can be achieved in the pick-up process due to the optical contrast between the resin material and the metal material. When the laminated films 20A and 20B for forming the support pieces have a metal layer, due to the malleability of the metal, the edges of the metal pieces (the metal layer is fragmented) are likely to enter the adhesive layer 2. When the adhesive layer 2 is a pressure-sensitive type, since the step of curing the adhesive layer 2 by ultraviolet irradiation is not carried out between the fragmentation step and the pick-up step, excellent pick-up properties can be achieved even if the edges of the metal pieces enter the adhesive layer 2.

Example

[0072] Hereinafter, the present disclosure will be described by way of examples, but the present invention is not limited to these examples.

[0073] (Preparation of Varnish A) Varnish A for the film for forming the support piece was prepared using the following materials. · Epoxy resin 1: YDCN-700-10: (trade name, manufactured by Nippon Steel & Sumikin Chemical Co., Ltd., cresol novolak type epoxy resin, solid at 25°C) 5.4 parts by mass · Epoxy resin 2: YDF-8170C: (trade name, manufactured by Nippon Steel & Sumikin Chemical Co., Ltd., liquid bisphenol F type epoxy resin, liquid at 25°C) 16.2 parts by mass · Phenolic resin (hardening agent): LF-4871: (trade name, manufactured by DIC Corporation, BPA novolak type phenolic resin) 13.3 parts by mass · Inorganic filler: SC2050-HLG: (trade name, manufactured by Admatechs Co., Ltd., silica filler dispersion liquid, average particle size 0.50 μm) 49.8 parts by mass · Elastomer: SG-P3 Solvent-Modified Product (trade name, manufactured by Nagase ChemteX Corporation, acrylic rubber, weight average molecular weight: 800,000, Tg: 12 °C, solvent is cyclohexanone) 14.9 parts by mass · Coupling Agent 1: A-189: (trade name, manufactured by GE Toshiba Corporation, γ-mercaptopropyltrimethoxysilane) 0.1 part by mass · Coupling Agent 2: A-1160: (trade name, manufactured by GE Toshiba Corporation, γ-ureidopropyltriethoxysilane) 0.3 part by mass · Curing Accelerator: Curezol 2PZ-CN: (trade name, manufactured by Shikoku Chemicals Corporation, 1-cyanoethyl-2-phenylimidazole) 0.05 part by mass · Solvent: Cyclohexane

[0074] (Preparation of Varnish B) Varnish B for the film for forming the support piece was prepared using the following materials. · Epoxy Resin: YDCN-700-10: (trade name, manufactured by Nippon Steel & Sumikin Chemical Co., Ltd., cresol novolak type epoxy resin, solid at 25 °C) 13.2 parts by mass · Phenolic Resin (Hardening Agent): HE-100C-30: (trade name, manufactured by Air Water Incorporated, phenylalkyl type phenolic resin) 11.0 parts by mass · Inorganic Filler: Aerosil R972: (trade name, manufactured by Nippon Aerosil Co., Ltd., silica, average particle diameter 0.016 μm) 7.8 parts by mass · Elastomer: SG-P3 Solvent-Modified Product (trade name, manufactured by Nagase ChemteX Corporation, acrylic rubber, weight average molecular weight: 800,000, Tg: 12 °C, solvent is cyclohexanone) 66.4 parts by mass · Coupling Agent 1: A-189: (trade name, manufactured by GE Toshiba Corporation, γ-mercaptopropyltrimethoxysilane) 0.4 part by mass · Coupling Agent 2: A-1160: (trade name, manufactured by GE Toshiba Corporation, γ-ureidopropyltriethoxysilane) 1.15 parts by mass · Curing Accelerator: Curezol 2PZ-CN: (trade name, manufactured by Shikoku Chemicals Corporation, 1-cyanoethyl-2-phenylimidazole) 0.03 part by mass · Solvent: Cyclohexane

[0075] <Example 1A> As described above, cyclohexanone was used as the solvent, and the solid content ratio of varnish A was adjusted to 40% by mass. Varnish A was filtered through a 100-mesh filter and degassed under vacuum. As the film for applying varnish A, a polyethylene terephthalate (PET) film (thickness: 38 μm) subjected to a release treatment was prepared. The degassed varnish A was applied onto the surface of the PET film subjected to the release treatment. The applied varnish A was dried by heating in two steps: at 90°C for 5 minutes and then at 140°C for 5 minutes. Thus, a thermosetting resin layer A in a B-stage state (semi-cured state) was formed on the surface of the PET film.

[0076] A laminated film having a pressure-sensitive adhesive layer was produced by the following procedure. As the adhesive, an acrylic copolymer using 2-ethylhexyl acrylate and methyl methacrylate as main monomers and hydroxyethyl acrylate and acrylic acid as functional group monomers was obtained by solution polymerization. The weight average molecular weight of the synthesized acrylic copolymer was 400,000, and the glass transition point was -38°C. An adhesive solution was prepared by blending 10 parts by mass of a polyfunctional isocyanate crosslinking agent (product name: Mycote NY730-T, manufactured by Mitsubishi Chemical Corporation) with 100 parts by mass of this acrylic copolymer, and the solution was applied and dried on a surface-release-treated polyethylene terephthalate (thickness: 25 μm) so that the adhesive thickness during drying was 10 μm. Further, a 100-μm polyolefin substrate made of polypropylene / vinyl acetate / polypropylene was laminated onto the adhesive surface. This adhesive film was left at room temperature for 2 weeks for sufficient aging to obtain a dicing tape.

[0077] The thermosetting resin layer A with a thickness of 50 μm was heated at 110°C for 1 hour and then at 130°C for 3 hours to be cured, thereby obtaining a cured resin layer A. The cured resin layer A was laminated onto the adhesive layer of the above dicing tape using a rubber roll on a hot plate at 70°C. Through this process, a laminate of a film for forming a support piece and a dicing tape was obtained.

[0078] <Example 2A> After heating the thermosetting resin layer A at 110°C for 1 hour, instead of heating it at 130°C for 3 hours, a laminate of the support piece forming film and the dicing tape was obtained in the same manner as in Example 1A, except that it was cured by heating at 110°C for 2 hours.

[0079] <Example 3A> A thermosetting resin layer B was formed on the surface of a PET film using varnish B instead of varnish A. Then, on a 70°C hot plate, the thermosetting resin layer B was bonded to the adhesive layer of the dicing tape with a rubber roll, and then a polyimide film (thickness 25 μm) was bonded to the thermosetting resin layer B with a rubber roll. Through this process, a laminate of the support piece forming film and the dicing tape was obtained.

[0080] The pick-up property of the support piece forming films of Examples 1A to 3A was evaluated. That is, a dicing ring was laminated on the dicing tape of the laminate according to Examples 1A to 3A under the condition of 70°C. The support piece forming film was diced into individual pieces under the condition of a height of 55 μm using a dicer. As a result, support pieces with a size of 10 mm × 10 mm were obtained. Then, the support pieces were picked up in a state of being expanded (expansion amount: 3 mm) with a die bonder. As a pushing-up jig, a pushing-up device (DB-830plus+(trade name) manufactured by FASFORD TECHNOLOGY) having nine needles was used, and the conditions were a pushing-up speed of 10 mm / second and a pushing-up height of 350 μm. For each example, when attempting to pick up six support pieces, in any of Examples 1A to 3A, all six support pieces could be picked up.

[0081] <Example 1B> A laminate of the support piece forming film and the dicing tape was obtained in the same manner as in Example 1A, except that a dicing tape having an ultraviolet curable adhesive layer was used instead of the pressure-sensitive adhesive layer.

[0082] A dicing tape having an ultraviolet-curable adhesive layer was produced by the following procedure. 83 parts by mass of 2-ethylhexyl acrylate, 15 parts by mass of 2-hydroxyethyl acrylate, and 2 parts by mass of methacrylic acid were used as raw materials, and ethyl acetate was used as a solvent to obtain a copolymer by solution radical polymerization. To this acrylic copolymer, 12 parts by mass of 2-methacryloyloxyethyl isocyanate was reacted to synthesize an ultraviolet-reactive acrylic copolymer having a carbon-carbon double bond. In the above reaction, 0.05 part of hydroquinone monomethyl ether was used as a polymerization inhibitor. When the weight average molecular weight of the synthesized acrylic copolymer was measured by GPC, it was 300,000 to 700,000. The acrylic copolymer thus obtained, 2.0 parts of a polyisocyanate compound (manufactured by Nippon Polyurethane Industry Co., Ltd., trade name: Coronate L) as a curing agent in terms of solid content, and 0.5 part of 1-hydroxycyclohexyl phenyl ketone as a photoinitiator were mixed to prepare an ultraviolet-curable adhesive solution. This ultraviolet-curable adhesive solution was applied and dried on a polyethylene terephthalate release film (thickness: 38 μm) so that the thickness after drying was 10 μm. Thereafter, a polyolefin film (thickness: 90 μm) having a corona discharge treatment on one side was laminated on the adhesive layer. The obtained laminated film was aged in a constant temperature bath at 40°C for 72 hours to obtain a dicing tape.

[0083] <Example 2B> A laminate of a film for forming a support piece and a dicing tape was obtained in the same manner as in Example 2A, except that a dicing tape having an ultraviolet-curable adhesive layer was used instead of the pressure-sensitive adhesive layer.

[0084] <Example 3B> A laminate of a film for forming a support piece and a dicing tape was obtained in the same manner as in Example 3A, except that a dicing tape having an ultraviolet-curable adhesive layer was used instead of the pressure-sensitive adhesive layer.

[0085] The pick-up property of the films for forming support pieces in Examples 1B to 3B was evaluated. That is, a dicing ring was laminated on the dicing tape of the laminate according to Examples 1B to 3B under the condition of 70°C. The film for forming support pieces was diced into individual pieces under the condition of a height of 55 μm using a dicer. As a result, support pieces with a size of 10 mm × 10 mm were obtained. An ultraviolet ray was irradiated from the dicing tape side to the adhesive layer of the support piece with a halogen lamp at 80 mW / cm 2 , 200 mJ / cm 2 . Then, the support piece was picked up in a state where it was expanded by a die bonder (expansion amount: 3 mm). As a pushing-up jig, a pushing-up device (DB-830plus+(trade name) manufactured by FASFORD TECHNOLOGY) having a tip portion with the configuration (three-stage type) shown in FIGS. 12(a) to 12(c) was used, and the conditions were a pushing-up speed of 10 mm / second and a pushing-up height of 1200 μm. For each example, when attempting to pick up 6 support pieces, in any of Examples 1B to 3B, all 6 support pieces could be picked up.

Industrial Applicability

[0086] According to the present disclosure, a method for manufacturing a support piece used in the manufacture of a semiconductor device having a dormen structure can be efficiently manufactured, and a method for manufacturing a support piece that can contribute to an improvement in the production efficiency of the semiconductor device is provided. Further, according to the present disclosure, a method for efficiently manufacturing a semiconductor device having a dormen structure using the above support piece is provided.

Description of Reference Numerals

[0087] 1…Base film, 1a…Inner region, 2…Adhesive layer, 2a…Peripheral region, 5, 5a, 5b…Thermosetting resin layer, 5p…Adhesive sheet, 6…Resin layer, 6p…Resin sheet, 10…Substrate, 20, 20A, 20B…Laminated film for forming support piece, 25, 25A, 25B…Laminated film, 50…Sealing material, 100…Semiconductor device, C…Suction collet, D…Film for forming support piece, D2…Two-layer film (film for forming support piece), D3…Three-layer film (film for forming support piece), Da…Support piece, Dc…Support piece (cured product), DR…Dicing ring, F, F1, F2…Tip surface, G…Cut, H…Heater, P…Member, P1…First cylindrical member, P2…Second cylindrical member, N…Needle, T1…First chip, T2…Second chip, T2a…Chip with adhesive sheet, Ta…Adhesive sheet, Tc…Adhesive sheet (cured product)

Claims

1. a first thermosetting resin layer, a second thermosetting resin layer, an intermediate layer disposed between the first and second thermosetting resin layers, having a multilayer structure comprising, wherein the intermediate layer has a higher rigidity than the first and second thermosetting resin layers, a film for forming fragmented bodies which becomes a plurality of fragmented bodies by being fragmented.

2. The film for forming fragmented bodies according to claim 1, wherein the intermediate layer is composed of a polyimide resin.

3. The film for forming fragmented bodies according to claim 1 or 2, wherein the thickness of the intermediate layer is 5 to 100 μm.

Images