Vibrating element and manufacturing method thereof

Abstract

PURPOSE: To provide a vibrating element and a manufacturing method thereof which are able to reduce cracks at cutting edges, thereby improving reliability.SOLUTION: The manufacturing method of the vibrating element includes the following steps. A quartz wafer is provided which has a first surface and a second surface opposite to the first surface. A first etching process is performed on the quartz wafer to form multiple inverted mesa portions, where the inverted mesa portions have a first thickness. The quartz wafer is singulated to form multiple vibrating elements. Each of the vibrating elements includes one of the inverted mesa portions. A second etching process is performed on the vibrating elements to form chamfers at edges of the vibrating elements.SELECTED DRAWING: Figure 1L

Description

Technical Field

[0001] The present invention relates to a chip and a method for manufacturing the same, and more particularly, to a vibrating piece and a method for manufacturing the same.

Background Art

[0002] A crystal oscillator is an electronic component for generating a vibration frequency. With the trend of miniaturization and thinning of electronic products, the size of the crystal oscillator has been continuously reduced. However, in the cutting process of the crystal oscillator, cracks exceeding 5 micrometers are likely to occur in the cutting edge portion, and the crystal oscillator is likely to be damaged when an external force is applied, which affects the reliability of the crystal oscillator.

Summary of the Invention

Problems to be Solved by the Invention

[0003] Improving the reliability of the crystal oscillator has become an issue to be solved currently. The present invention provides a vibrating piece and a method for manufacturing the same that can reduce cracks at the cutting edge and improve reliability.

Means for Solving the Problems

[0004] The method for manufacturing a vibrating piece of the present invention includes the following steps. Provide a crystal wafer. The crystal wafer has a first surface and a second surface facing the first surface. Perform a first etching process on the crystal wafer to form a plurality of inverted mesa portions. The plurality of inverted mesa portions have a first thickness. Singularize the crystal wafer to form a plurality of vibrating pieces. Each of the plurality of vibrating pieces includes one of the plurality of inverted mesa portions. Perform a second etching process on the plurality of vibrating pieces to form a chamfered structure at the edges of the plurality of vibrating pieces.

[0005] In one embodiment of the present invention, the above-described second etching process is an isotropic etching process.

[0006] In one embodiment of the present invention, after performing the second etching process on the plurality of vibrating pieces described above, the plurality of reverse mesa portions have a third thickness, and the third thickness is smaller than the first thickness.

[0007] In one embodiment of the present invention, the ratio of the above-described third thickness to the first thickness is less than 0.9.

[0008] In one embodiment of the present invention, the step of performing the first etching process on the above-described quartz wafer includes the following steps. A first recess is formed on the first surface of the quartz wafer. A second recess is formed on the second surface of the quartz wafer. The first recess corresponds to the second recess.

[0009] In one embodiment of the present invention, the above-described manufacturing method further includes the step of forming a mask layer on the first surface and the second surface of the quartz wafer. The mask layer includes a plurality of openings, and the positions of the plurality of openings define the positions of the plurality of reverse mesa portions. The step of performing the first etching process on the quartz wafer includes the step of immersing the quartz wafer in an etching solution to remove the portions of the quartz wafer not covered by the mask layer.

[0010] In one embodiment of the present invention, the step of forming the plurality of openings in the above-described mask layer includes the steps of forming a patterned photoresist layer on the mask layer, using the patterned photoresist layer as a mask to remove the mask layer not covered by the patterned photoresist layer to form a plurality of openings and expose a part of the first surface and the second surface of the quartz wafer, and removing the patterned photoresist layer.

[0011] In one embodiment of the present invention, the step of singulating the above-described quartz wafer includes the steps of defining dividing grooves in the quartz wafer using a laser and dividing the quartz wafer along the dividing grooves into a plurality of vibrating pieces using wet etching.

[0012] The vibrating piece of the present invention includes an inverse mesa portion and a peripheral portion. The peripheral portion surrounds the inverse mesa portion from the side, and the thickness of the inverse mesa portion is smaller than that of the peripheral portion. The peripheral portion has at least one chamfer structure between the top surface or the bottom surface and the outer surface.

[0013] In one embodiment of the present invention, the included angle between the above-mentioned at least one chamfer structure and the top surface or the bottom surface is between 95 degrees and 125 degrees.

[0014] In one embodiment of the present invention, the edge of the above-mentioned peripheral portion has a notch.

[0015] In one embodiment of the present invention, the depth of the above-mentioned notch is smaller than 4 micrometers.

[0016] In one embodiment of the present invention, the above-mentioned at least one chamfer structure includes a first chamfer structure and a second chamfer structure, which are respectively located on the peripheral portions on both opposite sides of the inverse mesa portion. Here, the first chamfer structure is an inclined surface connecting between the bottom surface and the outer surface of the peripheral portion, and the second chamfer structure is an inclined surface connecting between the top surface and the outer surface of the peripheral portion.

Advantages of the Invention

[0017] As described above, since the vibrating piece of the present invention forms the inverse mesa portion by two etching processes, while forming the inverse mesa portion having a predetermined thickness, by modifying the edge of the vibrating piece, the occurrence of cracks can be reduced, and the possibility of being damaged by the impact of an external force can be reduced, thereby improving its reliability.

Brief Description of the Drawings

[0018]

Figure 1A

Figure 1B

Figure 1C

Figure 1D

Figure 1E

Figure 1F

Figure 1G

Figure 1H

Figure 1I

Figure 1J

Figure 1K

Figure 1L

Figure 2

Figure 3

Embodiments for Carrying Out the Invention

[0019] Hereinafter, exemplary embodiments of the present invention will be fully described with reference to the drawings. However, since the present invention can be implemented in many different ways, it should not be limited to only the embodiments described in the text. In the drawings, for clarity, the sizes and thicknesses of each region, part, and layer may not be drawn based on actual proportions.

[0020] Directional terms mentioned in this document, such as "up", "down", "front", "rear", "left", "right", etc., are based on the directions of the accompanying drawings. Therefore, the directional terms used are for the purpose of explanation and not for limiting the present invention.

[0021] In the following embodiments, the same or similar components are denoted by the same or similar reference numerals, and the description thereof is omitted. Also, the features of different embodiments can be combined with each other when there is no contradiction, and any simple equivalent changes and modifications based on this specification or the claims are all included within the scope of this patent.

[0022] It should be understood that terms such as "first", "second", "third", etc. can be used in this document to describe various components, parts, regions, layers, and / or portions, but these components, parts, regions, layers, and / or portions should not be limited by these terms. These terms are used to distinguish one component, part, region, layer, or portion from another component, part, region, layer, or portion. Therefore, the first component, part, region, layer, or portion discussed below can be referred to as the second component, part, region, layer, or portion without departing from the teachings of this document.

[0023] Figures 1A to 1L are cross-sectional views of a method for manufacturing a vibrating piece according to one embodiment of the present invention.

[0024] Referring to Figure 1A, a quartz wafer 100 is provided. The quartz wafer 100 has a first surface 100a and a second surface 100b facing the first surface 100a. In some embodiments, the quartz wafer 100 may have a single crystal structure.

[0025] Next, a mask layer 110 is formed on the first surface 100a and the second surface 100b of the quartz wafer 100. In some embodiments, the mask layer 110 includes a metal material, for example, gold, chromium, nickel, copper, or other suitable metal materials. In some embodiments, the mask layer 110 can be formed by chemical vapor deposition, physical vapor deposition, or other suitable methods.

[0026] Referring to FIG. 1B, a photoresist layer 120 is formed on the mask layer 110. In some embodiments, the photoresist layer 120 can be formed by spin coating, chemical vapor deposition, physical vapor deposition, or other suitable methods.

[0027] Referring to FIG. 1C, a photomask (not shown) is used as a mask to expose and develop the photoresist layer 120, forming a patterned photoresist layer 120'. The patterned photoresist layer 120' can define an inverse mesa portion IM that will be etched later.

[0028] Referring to FIG. 1D, using the patterned photoresist layer 120' as a mask, by removing the mask layer 110 not covered by the patterned photoresist layer 120', a plurality of openings OP are formed, exposing a part of the first surface 100a and the second surface 100b of the quartz wafer 100. For example, wet etching can be used to immerse the obtained structure in an etching solution having a high etching selectivity with respect to the mask layer 110 to remove the mask layer 110 not covered by the patterned photoresist layer 120'. However, the present invention is not limited thereto, and other suitable methods can be utilized to remove the mask layer 110 not covered by the patterned photoresist layer 120'.

[0029] Referring to FIG. 1E, the patterned photoresist layer 120' is removed. In some embodiments, the patterned photoresist layer 120' can be removed by an ashing process, a wet etching process, a dry etching process, a chemical mechanical polishing process, or other suitable methods.

[0030] Referring to FIG. 1F, the mask layer 110 is used as a mask to perform a first etching process on the quartz wafer 100 to form a plurality of inverted mesa portions 102. The unetched portion of the quartz wafer 100 is also referred to as the peripheral portion 104. The inverted mesa portion 102 has a first thickness H1, the peripheral portion 104 has a second thickness H2, and the first thickness H1 is smaller than the second thickness H2. In some embodiments, the ratio of the first thickness H1 to the second thickness H2 is between about 0.45 and 0.65.

[0031] In some embodiments, the first etching process is a wet etching process. For example, by immersing the quartz wafer 100 in an etching solution and selectively removing the portion of the quartz wafer 100 not covered by the mask layer 110 of the quartz wafer 100, a first recess R1 is formed in the first surface 100a of the quartz wafer 100 within the inverted mesa portion IM, and a second recess R2 is formed in the second surface 100b of the quartz wafer 100. The first recess R1 and the second recess R2 correspond to each other. In some embodiments, the depth of the first recess R1 is substantially the same as the depth of the second recess R2, but the present invention is not limited thereto. In some embodiments, the etching solution used in the first etching process may be an etching solution having high etching selectivity with respect to the quartz wafer 100.

[0032] In some embodiments, since the etching rate of the quartz wafer 100 is relatively fast in the growth direction of its crystal lattice, the portion under the mask layer 110 of the quartz wafer 100 is also etched. For example, in FIG. 1F, the left side of the first recess R1 extends below the mask layer 110, so the left and right sides of the first recess R1 are asymmetric with respect to each other. On the other hand, the right side of the second recess R2 extends below the mask layer 110, so the left and right sides of the second recess R2 are asymmetric with respect to each other. In some embodiments, the bottom surface and the side wall of the first recess R1 form an included angle φ1 and an included angle φ2, and the included angle φ1 and the included angle φ2 have different angles. For example, the angle of the included angle φ1 is larger than the angle of the included angle φ2. In some embodiments, the bottom surface and the side wall of the second recess R2 form an included angle φ3 and an included angle φ4, and the included angle φ3 and the included angle φ4 have different angles. For example, the angle of the included angle φ4 is larger than the angle of the included angle φ3.

[0033] After the first etching process is performed on the quartz wafer 100, the reverse mesa portion 102 is first formed. The reverse mesa portion 102 at this time is not the predetermined thickness that the final vibrating piece wants to achieve. The first thickness H1 of the reverse mesa portion 102 may be between 1.1 times and 1.5 times the predetermined thickness of the vibrating piece.

[0034] Referring to FIG. 1G, the mask layer 110 is removed. In some embodiments, the mask layer 110 can be removed by a wet etching process, a dry etching process, a chemical mechanical polishing process, or other suitable methods.

[0035] Referring to FIGS. 1H and 1I, a quartz wafer 100 is singulated to form a plurality of vibrating pieces 100A. Each of the plurality of vibrating pieces 100A includes one of a plurality of inverse mesa portions 102. Specifically described, in FIG. 1H, a laser 200 is used to define a dividing groove 100' in the quartz wafer 100. The quartz wafer 100 can be divided into a plurality of vibrating pieces 100A along the dividing groove 100'. The path scanned by the laser 200 on the quartz wafer 100 is the path of the dividing groove 100'. Since the laser 200 has high energy, the laser-treated quartz wafer 100 (i.e., the dividing groove 100') can be altered. For example, it can be changed to a twin crystal structure to make the property of the dividing groove 100' different from that of the non-laser-treated quartz wafer 100.

[0036] Thereafter, in FIG. 1I, the quartz wafer 100 is divided into a plurality of vibrating pieces 100A along the dividing groove 100' by selectively etching the dividing groove 100' using wet etching. Since the property of the dividing groove 100' is different from that of the non-laser-treated quartz wafer 100, the quartz wafer 100 can be divided into a plurality of vibrating pieces 100A by selecting an etching solution having an appropriate etching selectivity ratio to etch the dividing groove 100'. For example, this etching solution can include ammonium hydrogen fluoride or other appropriate etching solutions.

[0037] Referring to FIG. 1J, the frequency of the inverse mesa portion 102 of the vibrating piece 100A is measured, and the time of a subsequent etching process required to reach a predetermined frequency is calculated. For example, the frequency of the inverse mesa portion 102 of the vibrating piece 100A is measured using a space charge measurement system 210, and then, based on the difference between the obtained frequency and the desired frequency, the time of a subsequent etching process required to obtain an inverse mesa portion 102 having a predetermined thickness can be calculated.

[0038] Referring to FIGS. 1K and 1L, a second etching process is performed on the vibrating piece 100A to etch the reverse mesa portion 102 until it reaches a predetermined thickness, and a chamfer structure 106 is formed on the edge of the vibrating piece 100A to modify the edge of the vibrating piece 100A and reduce the occurrence of cracks. In FIG. 1K, for clarity, the contour of the vibrating piece 100A before the second etching process is shown by a dashed line, and the contour of the vibrating piece 100A after the second etching process is shown by a solid line.

[0039] In some embodiments, the second etching process is an isotropic etching process such as, for example, a wet etching process. Accordingly, all surfaces of the vibrating piece 100A are etched to form a reverse mesa portion 102 having a third thickness H3 and a peripheral portion 104 having a fourth thickness H4. Here, the third thickness H3 is smaller than the first thickness H1, and the fourth thickness H4 is smaller than the second thickness H2. In some embodiments, the ratio of the third thickness H3 to the first thickness H1 is less than 0.9, or less than 0.88. In some embodiments, the ratio of the third thickness H3 to the first thickness H1 is between 0.8 and 0.9. In this way, the vibrating piece 100A can achieve the effect of modifying the edge by the second etching process, and at the same time, can achieve a predetermined thickness of the reverse mesa portion 102.

[0040] In some embodiments, since the vibrating piece 100A has a relatively high etching rate in the crystal lattice growth direction, the edge of the vibrating piece 100A can easily form the chamfered structure 106 in the crystal lattice growth direction, and the first recess R1 and the second recess R2 are etched more in the crystal lattice growth direction. For example, in FIG. 1L, the peripheral portion 104 includes a first portion 1041 and a second portion 1042, which are respectively located on the opposite sides of the reverse mesa portion 102. The first recess R1 is etched more in the direction of the first portion 1041 (compared with the direction of the second portion 1042), and the second recess R2 is etched more in the direction of the second portion 1042 (compared with the direction of the first portion 1041). Therefore, the left and right sides of the first recess R1 are asymmetric with each other, and the left and right sides of the second recess R2 are also asymmetric with each other. On the other hand, the vibrating piece 100A includes two chamfered structures (for example, a first chamfered structure 106a and a second chamfered structure 106b), which are respectively located between the bottom surface 104b and the outer surface 104c of the first portion 1041 of the peripheral portion 104, and between the top surface 104a and the outer surface 104c of the second portion 1042. In some embodiments, there is no chamfered structure between the top surface 104a and the outer surface 104c of the first portion 1041 of the peripheral portion 104, and there is also no chamfered structure between the bottom surface 104b and the outer surface 104c of the second portion 1042 of the peripheral portion 104. That is, between the top surface 104a and the outer surface 104c of the first portion 1041 of the peripheral portion 104, they are basically perpendicular to each other, and between the bottom surface 104b and the outer surface 104c of the second portion 1042 of the peripheral portion 104, they are also basically perpendicular to each other. However, the present invention is not limited thereto. In other embodiments, there may be a chamfered structure between the top surface 104a and the outer surface 104c of the first portion 1041 of the peripheral portion 104, and between the bottom surface 104b and the outer surface 104c of the second portion 1042 of the peripheral portion 104.

[0041] Based on the above, the manufacturing of the vibrating piece 100A of the present embodiment can be almost completed. The reverse mesa portion 102 of the vibrating piece 100A is formed by two etching processes. In the first etching process, the reverse mesa portion 102 is first formed, and then, in the second etching process, the edge of the vibrating piece 100A is modified, and at the same time, the reverse mesa portion 102 is etched until it reaches the required thickness, so that the occurrence of cracks can be reduced, thereby improving the reliability of the vibrating piece 100A.

[0042] FIG. 2 is a top view of the vibrating piece in FIG. 1L. FIG. 1L may be a cross-sectional view taken along line A-A' of FIG. 2. Specifically described, FIG. 1L is a cross-sectional view taken along the short side direction D1 of the vibrating piece 100A.

[0043] Referring to FIGS. 1L and 2, the vibrating piece 100A includes a reverse mesa portion 102 and a peripheral portion 104. The peripheral portion 104 surrounds the reverse mesa portion 102 from the side, and the thickness of the reverse mesa portion 102 (i.e., the third thickness H3) is smaller than the thickness of the peripheral portion (i.e., the fourth thickness H4). The peripheral portion 104 has at least one chamfer structure 106 between the top surface 104a or the bottom surface 104b and the outer surface 104c.

[0044] In some embodiments, the thickness of the reverse mesa portion 102 (i.e., the third thickness H3) is between 5 micrometers and 20 micrometers, but the present invention is not limited thereto, and the thickness of the reverse mesa portion 102 can be adjusted according to actual needs.

[0045] The peripheral portion 104 can include a first portion 1041, a second portion 1042, a third portion 1043, and a fourth portion 1044 respectively connected to the periphery of the inverted mesa portion 102. The first portion 1041 faces the second portion 1042, and the third portion 1043 faces the fourth portion 1044. For example, in FIG. 2, the first portion 1041 is located on the left side of the inverted mesa portion 102, the second portion 1042 is located on the right side of the inverted mesa portion 102, the third portion 1043 is located on the upper side of the inverted mesa portion 102, and the fourth portion 1044 is located on the lower side of the inverted mesa portion 102. In some embodiments, the width of the fourth portion 1044 is wider than the widths of the first portion 1041, the second portion 1042, and the third portion 1043, and functions as a connection portion with other components in a subsequent package structure. (The width of the first portion 1041 refers to the distance between the edge of the first portion 1041 as viewed from a plan view and the edge of the inverted mesa portion 102 closest to the first portion 1041. The width of the second portion 1042 refers to the distance between the edge of the second portion 1042 as viewed from a plan view and the edge of the inverted mesa portion 102 closest to the second portion 1042. The width of the third portion 1043 refers to the distance between the edge of the third portion 1043 as viewed from a plan view and the edge of the inverted mesa portion 102 closest to the third portion 1043. The width of the fourth portion 1044 refers to the distance between the edge of the fourth portion 1044 as viewed from a plan view and the edge of the inverted mesa portion 102 closest to the fourth portion 1044.)

[0046] In some embodiments, the chamfer structure 106 is, for example, an inclined surface connected to the top surface 104a or the bottom surface 104b and the outer surface 104c of the peripheral portion 104. Specifically, in FIG. 1L, the vibrating piece 100A includes two chamfer structures (for example, the first chamfer structure 106a and the second chamfer structure 106b) respectively located at the peripheral portions 104 (for example, the first portion 1041 and the second portion 1042) on both opposite sides of the reverse mesa portion 102. The first chamfer structure 106a is, for example, an inclined surface connecting between the bottom surface 104b and the outer surface 104c of the first portion 1041 of the peripheral portion 104, and the first chamfer structure 106a and the bottom surface 104b of the first portion 1041 have an included angle θ1. The second chamfer structure 106b is, for example, an inclined surface connecting between the top surface 104a and the outer surface 104c of the second portion 1042 of the peripheral portion 104, and the second chamfer structure 106b and the top surface 104a of the second portion 1042 have an included angle θ2. In some embodiments, the included angle θ1 and the included angle θ2 may each be between 95 degrees and 125 degrees. In this way, the possibility of cracks occurring at the edge of the vibrating piece 100A can be reduced.

[0047] In some embodiments, the top surface 104a and the outer surface 104c of the first portion 1041 have an included angle θ3, and the included angle θ1 is basically larger than the included angle θ3. The bottom surface 104b and the outer surface 104c of the second portion 1042 have an included angle θ4, and the included angle θ2 is basically larger than the included angle θ4.

[0048] In some embodiments, the top surface 104a and the outer surface 104c of the first portion 1041 are basically vertically connected, and the bottom surface 104b and the outer surface 104c of the second portion 1042 are basically vertically connected. In some embodiments, the included angle θ3 and the included angle θ4 may each be between 85 degrees and 115 degrees, but the present invention is not limited thereto.

[0049] In some embodiments, after performing the above manufacturing process, as shown in FIG. 1L, the bottom surface and the side wall of the first recess R1 form an included angle φ1' and an included angle φ2' that face each other in the short side direction D1, and the angle of the included angle φ1' is larger than the angle of the included angle φ2'. The bottom surface and the side wall of the second recess R2 form an included angle φ3' and an included angle φ4' that face each other in the short side direction D1, and the angle of the included angle φ4' is larger than the angle of the included angle φ3'. In some embodiments, the included angle φ1' and the included angle φ4' may each be between 140 degrees and 170 degrees, but the present invention is not limited thereto. In some embodiments, the included angle φ2' and the included angle φ3' may each be between 92 degrees and 112 degrees, but the present invention is not limited thereto. In some embodiments, the included angle φ1' and the included angle φ3' are respectively located on both sides of the reverse mesa portion 102 and face each other. On the other hand, the included angle φ2' and the included angle φ4' are respectively located on both sides of the reverse mesa portion 102 and face each other.

[0050] In some embodiments, as shown in FIG. 3, the third portion 1043 and the fourth portion 1044 of the peripheral portion 104 basically do not have a chamfered structure (see the cross-sectional view of FIG. 3). That is, the top surface 104a and the bottom surface 104b of the third portion 1043 and the fourth portion 1044 are basically perpendicularly connected to the outer surface 104c respectively, but the present invention is not limited thereto.

[0051] In some embodiments, as shown in FIG. 2, the edge L1 of the first portion 1041 and / or the edge L2 of the second portion 1042 of the peripheral portion 104 can have a notch v. In some embodiments, the depth h of the notch v is less than 4 micrometers. Therefore, even if the vibrating piece 100A is subjected to an external force impact, it can be within its stress tolerance range, so the possibility of damage can be reduced. In this specification, the depth h of the notch v refers to the vertical distance between the tip of the notch v and the edge where the notch v exists. In FIG. 2, only one notch v is exemplarily shown on the edge L2 of the second portion 1042, but the present invention is not limited thereto. The edge L1 of the first portion 1041 and the edge L2 of the second portion 1042 may each have one or more notches v.

[0052] FIG. 3 shows a cross-sectional view of a package structure according to one embodiment of the present invention. It should be noted that the embodiment of FIG. 3 incorporates the reference numerals and some of the content of the embodiment of FIG. 1L. The same or similar reference numerals are used to denote the same or similar components, and for the same technical content, the description is omitted. For the description of the omitted parts, reference can be made to the above-described embodiments, and thus it will not be repeated here. The vibrating piece 100A shown in FIG. 3 is a cross-sectional view taken along line B-B' of FIG. 2. That is, the vibrating piece 100A shown in FIG. 3 is a cross-sectional view taken along the long side direction D2 of the vibrating piece 100A. (The long side direction D2 and the short side direction D1 are perpendicular to each other.)

[0053] Referring to FIG. 3, the package structure 10 includes a vibrating piece 100A, a first electrode 130, a second electrode 140, a base 150, and an upper lid ............... 160. The vibrating piece 100A may be the vibrating piece 100A of FIG. 1L, and for the related content, reference can be made to the above description, and thus it will not be repeated here. The first electrode 130 and the second electrode 140 can be respectively installed on the opposing surfaces of the reverse mesa portion 102 of the vibrating piece 100A. For example, the first electrode 130 is located on the top surface of the reverse mesa portion 102, and the second electrode 140 is located on the bottom surface of the reverse mesa portion 102. The region of the reverse mesa portion 102 between the first electrode 130 and the second electrode 140 is the vibration region, and the thickness of the reverse mesa portion 102 can determine the vibration frequency of the vibration region. In some embodiments, the first electrode 130 and the second electrode 140 can respectively extend along the top surface and the bottom surface of the reverse mesa portion 102 to the peripheral portion 104 of the vibrating piece 100A. In some embodiments, the vibrating piece 100A, the first electrode 130, and the second electrode 140 can form a resonator or an oscillator.

[0054] Since the base 150 has an accommodation space 152, the vibrating piece 100A can be installed within the accommodation space 152. The upper lid 160 is installed on the base 150, covers the vibrating piece 100A, and seals the accommodation space 152. In some embodiments, the package structure 10 further includes a seal ring or an adhesive layer 170, which can seal the upper lid 160 and the base 150. In some embodiments, the vibrating piece 100A can be adhered to the base 150 via an adhesive 180 at a fourth portion 1044 of the peripheral portion 104 of the vibrating piece 100A. That is, the first portion 1041, the second portion 1042, and the third portion 1043 of the peripheral portion 104 of the vibrating piece 100A are basically in a floating state in the air. The adhesive 180 is, for example, a conductive adhesive, and connects the first electrode 130 and the second electrode 140 to corresponding pads (not shown) or circuits (not shown) within the base 150.

[0055] The package structure 10 shows one application method of the vibrating piece 100A. Since cracks at the edge of the vibrating piece 100A are reduced, the possibility of being damaged by the impact of an external force can be decreased, thereby improving the reliability of the package structure 10.

[0056] As described above, the vibrating piece of the present invention forms an inverted mesa portion through two etching processes. Therefore, while forming an inverted mesa portion with a predetermined thickness, by modifying the edge of the vibrating piece, the occurrence of cracks can be reduced, and the possibility of being damaged by the impact of an external force can be decreased, thereby improving its reliability.

[0057] Although the present invention has been disclosed according to the above embodiments, these do not limit the present invention. Those with ordinary knowledge in the relevant technical field can make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be defined by the scope of the following patent claims.

Industrial Applicability

[0058] The vibrating piece of the present application and its manufacturing method are suitable for related applications applied to resonators or oscillators.

Explanation of Reference Numerals

[0059] 10 Package structure 100 Quartz wafer 100’ Dividing groove 100a First surface 100b Second surface 100A Vibrating piece 102 Inverse mesa portion 104 Peripheral portion 104a Top surface 104b Bottom surface 104c Outer surface 106 Chamfered structure 106a First chamfered structure 106b Second chamfered structure 110 Mask layer 120 Photoresist layer 120’ Patterned photoresist layer 130 First electrode 140 Second electrode 150 Base 152 Accommodation space 160 Upper lid 170 Seal ring or adhesive layer 200 Laser 210 Space charge measurement system 1041 First part 1042 Second part 1043 Third part 1044 Fourth part h Depth v Notch A-A’, B-B’ lines H1 First thickness H2 Second thickness H3 Third thickness H4 Fourth thickness IM Inverse mesa portion L1, L2 Edges OP Opening R1 First recess R2 Second recess θ1, θ2, θ3, θ4, φ1, φ2, φ3, φ4, φ1’, φ2’, φ3’, φ4’ Included angles

Claims

1. Providing a quartz wafer, wherein the quartz wafer has a first surface and a second surface opposite to the first surface; Performing a first etching process on the quartz wafer to form a plurality of reverse mesa portions, wherein the plurality of reverse mesa portions have a first thickness; Slicing the quartz wafer to form a plurality of vibrating pieces, wherein each of the plurality of vibrating pieces includes one of the plurality of reverse mesa portions; Performing a second etching process on the plurality of vibrating pieces to form a chamfered structure at the edges of the plurality of vibrating pieces; A method for manufacturing a vibrating piece, comprising the above steps.

2. The method for manufacturing a vibrating piece according to claim 1, wherein the second etching process is an isotropic etching process.

3. The method for manufacturing a vibrating piece according to claim 1, wherein after performing the second etching process on the plurality of vibrating pieces, the plurality of reverse mesa portions have a third thickness, and the third thickness is smaller than the first thickness.

4. The method for manufacturing a vibrating piece according to claim 3, wherein the ratio of the third thickness to the first thickness is smaller than 0.

9.

5. The step of performing the first etching process on the quartz wafer includes: Forming a first recess on the first surface of the quartz wafer; Forming a second recess on the second surface of the quartz wafer; The method for manufacturing a vibrating piece according to claim 1, wherein the first recess corresponds to the second recess.

6. Further comprising the step of forming a mask layer on the first surface and the second surface of the quartz wafer, wherein the mask layer includes a plurality of openings, and the positions of the plurality of openings define the positions of the plurality of reverse mesa portions; The step of performing the first etching process on the quartz wafer includes: Immersing the quartz wafer in an etching solution to remove a portion of the quartz wafer that is not covered by the mask layer of the quartz wafer. The method for manufacturing a vibrating piece according to claim 1.

7. The step of forming the plurality of openings in the mask layer includes: Forming a patterned photoresist layer on the mask layer; Using the patterned photoresist layer as a mask to remove the mask layer that is not covered by the patterned photoresist layer, thereby forming the plurality of openings and exposing a part of the first surface and the second surface of the quartz wafer; Removing the patterned photoresist layer. The method for manufacturing a vibrating piece according to claim 6, which includes

8. The step of singulating the quartz wafer includes defining a dividing groove in the quartz wafer using a laser, and dividing the quartz wafer along the dividing groove into the plurality of vibrating pieces using wet etching, The method for manufacturing a vibrating piece according to claim 1, which includes

9. a reverse mesa portion, and a peripheral portion, wherein the peripheral portion surrounds the reverse mesa portion from the side, and the thickness of the reverse mesa portion is smaller than the thickness of the peripheral portion, A vibrating piece having at least one chamfer structure between the top surface or the bottom surface of the peripheral portion and the outer surface.

10. The vibrating piece according to claim 9, wherein the angle between the at least one chamfer structure and the top surface or the bottom surface is between 95 degrees and 125 degrees.

11. The vibrating piece according to claim 9, wherein the edge of the peripheral portion has a notch.

12. The vibrating piece according to claim 11, wherein the depth of the notch is smaller than 4 micrometers.

13. The at least one chamfer structure includes a first chamfer structure and a second chamfer structure respectively located on the peripheral portions on both opposite sides of the reverse mesa portion, the first chamfer structure is an inclined surface connecting between the bottom surface and the outer surface of the peripheral portion, and the second chamfer structure is an inclined surface connecting between the top surface and the outer surface of the peripheral portion. The vibrating piece according to claim 9.

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