Composite device

Abstract

To provide a composite device high in security level, and a composite device capable of suitably suppressing unauthorized use.SOLUTION: A composite device includes a control part, a detection part, an authentication part and a storage part. The detection part has a function for detecting a touch operation and a function for acquiring information on a first fingerprint by finger touch; the authentication part has a function for authenticating a user; the storage part has a function for holding information on a second fingerprint preregistered; and the control part has a function for transferring a system to an unlocked state when the authentication part authenticates the user and a function for checking the first fingerprint information acquired by the detection part with the second fingerprint information when the detection part detects touch operation to transfer the system to a locked state when these do not match.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] One aspect of the present invention relates to an electronic device. One aspect of the present invention relates to an authentication method. The present invention relates to a display device. One aspect of the present invention relates to a program.

[0002] Note that one aspect of the present invention is not limited to the above technical field. The technical field of one aspect of the present invention disclosed in this specification and the like includes semiconductor devices, display devices, light-emitting devices, power storage devices, storage devices , electronic devices, lighting devices, input devices, input / output devices, their driving methods, or their manufacturing methods, as an example. A semiconductor device refers to all devices that can function by utilizing semiconductor characteristics.

Background Art

[0003] In recent years, information terminal devices such as mobile phones such as smartphones, tablet-type information terminals, and notebook PCs (personal computers) have become widely popular. Such information terminal devices often contain personal information and the like, and various authentication technologies have been developed to prevent unauthorized use.

[0004] For example, Patent Document 1 discloses an electronic device provided with a fingerprint sensor in a push button switch section.

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0006] One aspect of the present invention is to provide a composite device with a high security level as one of the problems. Or, it is one of the problems to provide a composite device that can preferably suppress unauthorized use. Or, it is one of the problems to provide a novel composite device.

[0007] Note that the description of these problems does not prevent the existence of other problems. Note that one aspect of the present invention does not need to solve all of these problems. Note that other problems can be extracted from the descriptions in the specification, drawings, claims, etc. One aspect of the present invention is not required to solve all of these problems. Other problems can be extracted from the descriptions in the specification, drawings, claims, etc. It is possible to extract other problems from the descriptions in the specification, drawings, claims, etc.

Means for Solving the Problems

[0008] One aspect of the present invention is a composite device having a control unit, a detection unit, an authentication unit, and a storage unit. The detection unit has a function of detecting a touch operation and a function of acquiring first fingerprint information of the touched finger. The authentication unit has a function of executing user authentication processing. The storage unit has a function of holding second fingerprint information registered in advance. The control unit has a function of shifting the system to an unlocked state when the authentication unit authenticates the user, and when the detection unit detects a touch operation, collating the first fingerprint information acquired by the detection unit with the second fingerprint information, and shifting the system to a locked state when they do not match. The authentication unit has a function of executing user authentication processing. The storage unit has a function of holding second fingerprint information registered in advance. The control unit has a function of shifting the system to an unlocked state when the authentication unit authenticates the user, and when the detection unit detects a touch operation, collating the first fingerprint information acquired by the detection unit with the second fingerprint information, and shifting the system to a locked state when they do not match. The authentication unit has a function of executing user authentication processing. The storage unit has a function of holding second fingerprint information registered in advance. The control unit has a function of shifting the system to an unlocked state when the authentication unit authenticates the user, and when the detection unit detects a touch operation, collating the first fingerprint information acquired by the detection unit with the second fingerprint information, and shifting the system to a locked state when they do not match. The authentication unit has a function of executing user authentication processing. The storage unit has a function of holding second fingerprint information registered in advance. The control unit has a function of shifting the system to an unlocked state when the authentication unit authenticates the user, and when the detection unit detects a touch operation, collating the first fingerprint information acquired by the detection unit with the second fingerprint information, and shifting the system to a locked state when they do not match. The authentication unit has a function of executing user authentication processing. The storage unit has a function of holding second fingerprint information registered in advance. The control unit has a function of shifting the system to an unlocked state when the authentication unit authenticates the user, and when the detection unit detects a touch operation, collating the first fingerprint information acquired by the detection unit with the second fingerprint information, and shifting the system to a locked state when they do not match. The authentication unit has a function of executing user authentication processing. The storage unit has a function of holding second fingerprint information registered in advance. The control unit has a function of shifting the system to an unlocked state when the authentication unit authenticates the user, and when the detection unit detects a touch operation, collating the first fingerprint information acquired by the detection unit with the second fingerprint information, and shifting the system to a locked state when they do not match.

[0009] Also, another aspect of the present invention is a composite device having a control unit, a display unit, an authentication unit, and a storage unit. The display unit has a function of displaying an image on the screen, a function of detecting a touch operation on the screen, and a function of acquiring first fingerprint information of the finger touching the screen. The display unit has a function of displaying an image on the screen, a function of detecting a touch operation on the screen, and a function of acquiring first fingerprint information of the finger touching the screen. It has a function of executing user authentication processing. The storage unit holds pre-registered second fingerprint information. When the authentication unit authenticates the user, the control unit has a function of shifting the system to an unlocked state, and when the display unit detects a touch operation, the control unit collates the first fingerprint information acquired by the display unit with the second fingerprint information, and when they do not match, it has a function of shifting the system to a locked state.

[0010] Also, in the above, the display unit preferably has a plurality of pixels. At this time, the pixel preferably has a light-emitting element and a light-receiving element, and the light-emitting element and the light-receiving element are preferably provided on the same plane.

[0011] Also, in the above, the light-emitting element preferably has a stacked structure in which a first electrode, a light-emitting layer, and a common electrode are stacked. Also, the light-receiving element preferably has a stacked structure in which a second electrode, an active layer, and a common electrode are stacked. At this time, the light-emitting layer and the active layer preferably contain different organic compounds from each other. Also, the first electrode and the second electrode are provided spaced apart on the same plane, and the common electrode is preferably provided so as to cover the light-emitting layer and the active layer.

[0012] Alternatively, in the above, the light-emitting element preferably has a stacked structure in which a first electrode, a common layer, a light-emitting layer, and a common electrode are stacked. Also, the light-receiving element preferably has a stacked structure in which a second electrode, a common layer, an active layer, and a common electrode are stacked. At this time the light-emitting layer and the active layer preferably contain different organic compounds from each other. Also the first electrode and the second electrode are provided spaced apart on the same plane, and the common electrode is provided It is provided to cover the active layer, and the common layer is preferably provided to cover the first electrode and the second electrode. Preferably.

[0013] Also, in the above, the light-emitting element preferably has a function of emitting visible light, and the light-receiving element preferably has a function of receiving the visible light emitted by the light-emitting element. Preferably.

[0014] Alternatively, in the above, the light-emitting element preferably has a function of emitting infrared light, and the light-receiving element preferably has a function of receiving the infrared light emitted by the light-emitting element. Preferably.

[0015] Another aspect of the present invention is a program for causing a composite device having a control unit, a detection unit, and an authentication unit to execute. Here, the detection unit has a function of detecting a touch operation and a function of acquiring first fingerprint information of the touched finger. The program of one aspect of the present invention has the following steps. When the authentication unit executes user authentication and is authenticated, the system proceeds to a state where the lock is released. When the detection unit detects a touch operation, it acquires first fingerprint information. The control unit collates the first fingerprint information with second fingerprint information registered in advance. When the first fingerprint information and the second fingerprint information match, the control unit executes processing according to the touch operation. When the first fingerprint information and the second fingerprint information do not match, the control unit shifts the system to a locked state. Preferably. Preferably. Preferably. Preferably. Preferably. Preferably. Preferably. Preferably. Preferably.

Advantages of the Invention

[0016] According to one aspect of the present invention, a composite device with a high security level can be provided. Also, a composite device that can preferably suppress unauthorized use can be provided. Or, a novel composite device Preferably. can provide.

[0017] Note that the description of these effects does not prevent the existence of other effects. Note that one aspect of the present invention does not necessarily have to have all of these effects. Note that other effects can be extracted from the description in the specification, drawings, claims, etc.

Brief Description of the Drawings

[0018]

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Mode for Carrying Out the Invention

[0019] Hereinafter, embodiments will be described with reference to the drawings. However, the embodiments can be implemented in many different modes, and it will be easily understood by those skilled in the art that the form and details can be variously changed without departing from the spirit and its scope. Therefore, the present invention is not to be construed as being limited to the contents described in the following embodiments.

[0020] In the configuration of the invention described below, the same parts or parts having the same functions are commonly used with the same reference numerals among different drawings, and the repeated description thereof is omitted. Also, when referring to the same functions, the hatch patterns may be the same and may not be particularly labeled.

[0021] In each of the drawings described in this specification, the sizes of the respective components, the thicknesses of the layers, or the regions may be exaggerated for clarity. Therefore, it is not necessarily limited to that scale.

[0022] Note that ordinal numbers such as "first" and "second" in this specification are used to avoid confusion of components ​The number is not a numerical limitation.

[0023] (Embodiment 1) In this embodiment, a composite device according to one embodiment of the present invention and a method for operating the composite device will be described. We will explain about this.

[0024] In the drawings attached to this specification, the components are classified by function and are separated into blocks independent of each other. Although the block diagram is shown as a block, the actual components are completely separated by function. It is difficult to do so, and one component may be involved in multiple functions, or one function may be involved in multiple components. It may be possible to achieve this simply.

[0025] The composite device according to one embodiment of the present invention includes a screen (also called a touch panel) and a touch pad. and a function for acquiring a fingerprint of a finger that touches the input means of the user and performing user authentication processing using the fingerprint. Each time a user touches the screen or touchpad to operate the device, This allows for extremely high security levels in devices. It is possible.

[0026] On the other hand, for devices that only use a password as an authentication method, If a password or other information is obtained illegally, a malicious user may use the device fraudulently. Furthermore, even if biometric authentication such as fingerprint authentication or face authentication is used alone, it is difficult to identify the true identity of the user. You can unlock the device without being noticed, even when you are sleeping. There is a problem that

[0027] In the multi-function device according to one aspect of the present invention, authentication processing is performed each time an operation is performed using the screen or touchpad. Since management is carried out, even if the device is unlocked by an improper method or various systems are logged in, the device immediately enters a locked state, making it impossible for malicious users to use the device. Even if this occurs, the device can immediately enter a locked state, preventing malicious users from using the device.

[0028] Hereinafter, a more specific configuration example of the composite device according to an aspect of the present invention will be described with reference to the drawings.

[0029] [Configuration Example of Composite Device] FIG. 1 shows a block diagram of a device 10 according to an aspect of the present invention. The device 10 includes a control unit 11, a display unit 12, an authentication unit 13, and a storage unit 14. The display unit 12 includes a detection unit 21. The device 10 can be used as an electronic device such as an information terminal device, for example.

[0030] The authentication unit 13 has a function of executing user authentication processing. After executing the user authentication processing, the authentication unit 13 can output the result to the control unit 11.

[0031] Examples of authentication methods applicable to the authentication unit 13 include authentication methods using user input such as password input or pattern input, or authentication methods using user biometric information such as fingerprint authentication, vein authentication, voiceprint authentication, face authentication, and iris authentication (also referred to as biometric authentication ). ) and the like.

[0032] The display unit 12 has a function of displaying an image, a function of detecting a touch, and a function of acquiring fingerprint information of a finger touching the screen or the like. Here, an example is shown in which the display unit 12 includes a detection unit 21. The detection unit 21 has the functions of detecting a touch and among the above functions of the display unit 12. ​​​​This is the part responsible for the function of acquiring fingerprint information. The display unit 12 can also be referred to as a touch panel with a fingerprint information acquisition function.

[0033] The detection unit 21 has a function of outputting the position information of the finger touched on the screen to the control unit 11. In addition, the detection unit 21 has a function of capturing the fingerprint of the finger that touched the screen and outputting the image information as fingerprint information to the control unit 11.

[0034] Preferably, the display unit 12 can acquire the fingerprint information of the touched finger at any position on the screen. That is, it is preferable that the range where the touch sensor functions on the screen coincides with or is approximately the same as the range where fingerprint information can be acquired.

[0035] The storage unit 14 has a function of holding the fingerprint information of the pre-registered user. The storage unit 14 can output the fingerprint information to the control unit 11 in response to the request of the control unit 11.

[0036] Preferably, the storage unit 14 holds the fingerprint information of all the fingers used by the user for screen operations. For example, it can hold the fingerprint information of two fingers, the index finger of the user's right hand and the index finger of the left hand. In addition, preferably, it holds the fingerprint information of one or more of the middle finger, ring finger, little finger, and thumb.

[0037] In the user authentication executed by the authentication unit 13, when the control unit 11 is authenticated, it has a function of transitioning the system from the locked state to the unlocked state.

[0038] In addition, when the detection unit 21 detects a touch operation, the control unit 11 sends a finger ​​​​​​​​​​It has a function of requesting acquisition of fingerprint information. And the control unit 11 has a function of collating the fingerprint information input from the detection unit 21 with the fingerprint information registered in advance. When the control unit 11 determines that these two pieces of fingerprint information match, it executes processing according to the user's touch operation. On the other hand, when the control unit 11 determines that the two pieces of fingerprint information do not match, it shifts the system from the unlocked state to the locked state. As a method of fingerprint authentication executed by the control unit 11, for example, a template matching method or a pattern matching method that compares two images and uses their similarity can be used. Also, fingerprint authentication processing may be executed by inference using machine learning. At this time, it is preferably performed by inference using a neural network in particular. Also, the control unit 11 can function as, for example, a central processing unit (CPU: Central Processing Unit). The control unit 11 interprets and executes instructions from various programs by a processor to perform various data processing and program control. Programs that can be executed by the processor may be stored in the memory area of the processor or in the storage unit 14. [Operation example of device 10] Hereinafter, an example of the operation of the above device 10 will be described. FIG. 2 is a flowchart related to the operation of the device 10. The flowchart shown in FIG. 2 has steps S0 to S9.

[0039]

[0040]

[0041]

[0042] ​​​​​​​​​​​​​​First, in step S0, the operation is started. For example, when the power of the electronic device incorporating device 10 is turned on, a physical button is pressed, the user touches the display unit 12, or it is detected that the posture of the electronic device has changed significantly, the operation is started. At this time, the system of device 10 is in a locked state (also referred to as a logged-out state or a logged-off state).

[0043] In step S1, the acquisition of authentication information necessary for the authentication process of the authentication unit 13 is performed.

[0044] In step S2, the authentication unit 13 performs user authentication processing based on the above authentication information. If authenticated, the process proceeds to step S3. If not authenticated, the system returns to step S1 again while maintaining the locked state.

[0045] In step S3, the control unit 11 shifts the system to a state where the lock is released (also referred to as a logged-in state).

[0046] In step S4, the detection unit 21 detects a touch operation. If a touch is detected, the process proceeds to step S5. If no touch operation is performed, the system waits while maintaining the unlocked state until a touch operation is performed (returns to step S4 again).

[0047] Note that in step S4, if no touch operation is performed for a certain period, the control unit 11 may shift the system to a locked state. At this time, it may also proceed to step S1.

[0048] ​​​​​​​In step S5, the detection unit 21 acquires fingerprint information. The detection unit 21 outputs the acquired fingerprint information to the control unit 11.

[0049] In step S6, the control unit 11 executes fingerprint authentication processing. Specifically, the control unit compares the fingerprint information stored in the storage unit 14 with the fingerprint information acquired by the detection unit 21 to determine whether they match. If authentication is successful (when it is determined that the two fingerprint information match), the process proceeds to step S7. On the other hand, if authentication fails (when it is determined that the two fingerprint information do not match), the process proceeds to step S8.

[0050] In step S7, the control unit 11 executes processing based on the touch operation detected in step S4. Examples of touch operations include tap, long tap, swipe, pinch in, pinch out, flick, drag, and other operations.

[0051] After executing the processing in step S7, the process returns to step S4 and waits until a touch operation is performed again.

[0052] In step S8, the system transitions to a locked state. As a result, the user operating the electronic device can no longer use the electronic device. Or, the available functions are restricted.

[0053] In step S9, the operation ends. In step S9, the power may be turned off, the system may be shut down, or the process may return to step S1 while maintaining the locked state ( or logout state) of the system.

[0054] ​This concludes the description of the flowchart shown in FIG.

[0055] The processing method, operation method, and operation method executed by the composite device according to one aspect of the present invention are The display method and the like can be written as a program. The processing method, operation method, operation method, display method, etc. executed by the device 10, etc. are described. The program described above is stored in a non-transitory storage medium and is executed by the control unit 11 of the device 10. The above-mentioned operations can be read and executed by a computing device or the like. A program for executing the method, etc. by hardware, and a program storing the program The non-transitory storage medium is an aspect of the present invention.

[0056] [Variations] In the above example, the display unit 12 includes the detection unit 21. However, the display unit 12 and the detection unit 21 may be provided separately. The device 10A shown in FIG. 3 is an example in which the detection unit 21 is not included in the display unit 12. is doing.

[0057] The detection unit 21 of the device 10A may be, for example, a touchpad that does not have an image display function. Examples include:

[0058] Alternatively, the device 10A may be a device that displays an image on a display unit 12 that does not have a function of acquiring fingerprint information. The input means may be configured to have two detectors 21 each having a display function. As the detection unit 21, a touch panel with a fingerprint information acquisition function is used, and a separate The display unit 12 may be provided as an image display means.

[0059] [Specific example] Specific examples of electronic devices to which the composite device according to one embodiment of the present invention is applied are described below. Explain.

[0060] Figure 4A schematically shows an electronic device 30 and a finger 25 operating the electronic device 30. The electronic device 30 has a display unit 31. The electronic device 30 is a portable information terminal device that functions as, for example, a smartphone.

[0061] In Figure 4A, the fingertip of the finger 25 is touching the display unit 31. At this time, the display unit 31 can obtain the fingerprint information 26 of the finger 25.

[0062] Figure 4B shows the fingerprint information 26 obtained by the display unit 31 and the fingerprint information 27 of the user previously registered in the electronic device 30. In Figure 4B, it is determined that the fingerprint information 26 and the fingerprint information 27 match. That is, since the authentication of the user using the electronic device 30 is completed, the user can perform operations such as moving the icon image 35 by a drag operation as shown in Figure 4A.

[0063] Figure 4C shows a state where a finger 25X of a user not registered in the electronic device 30 is trying to operate the electronic device 30. As shown in Figure 4D, since the fingerprint information 26 X of the finger 25X does not match the previously registered fingerprint information 27, the user authentication is not performed.

[0064] In Figure 4C, the electronic device 30 is in a locked state (or logged out state) so that the user cannot use it. Therefore, even if an operation of moving the icon image 35 with the finger 25X is performed, it is in a state where it does not react (does not accept the operation). Also at this time, as shown in Figure 4C, information 36 indicating that the electronic device 30 is in a locked state is displayed on the display unit 31. ​​​​​​​​​It may be displayed.

[0065] FIG. 5A shows an electronic device 40 to which a composite device according to one aspect of the present invention is applied. The electronic device 40 functions as a notebook personal computer.

[0066] The electronic device 40 includes a display unit 41, an input unit 42, a plurality of input keys 43, a housing 44, a housing 45 , a hinge portion 46, and the like. The display unit 41 is provided in the housing 44. The input unit 42 and the input key -43 are provided in the housing 45. The housing 44 and the housing 45 are connected by the hinge portion 46 .

[0067] The input unit 42 functions as a touch pad. The input unit 42 has a function of acquiring position information where the fingertip of the finger 25 touches and fingerprint information of the fingertip.

[0068] When a touch panel is applied to the display unit 41, it preferably has a function of acquiring fingerprint information .

[0069] FIG. 5B shows an electronic device 40A to which a flexible display is applied to the display unit 41A . The display unit 41A is provided across the housing 44 and the housing 45. Accordingly , seamless display can be performed across the two housings.

[0070] The display unit 41A has a function of displaying an image, a function of acquiring position information where the fingertip of the finger 25 touches , and a function of acquiring fingerprint information of the fingertip.

[0071] FIG. 5C shows an electronic device 40B in which display units are provided in each of two housings. A display unit 41B is provided in the housing 44. A display unit 41C is provided in the housing 45.

[0072] At least one of, preferably both of, the display units 41B and 41C displays an image and has a function of acquiring position information of the position touched by the fingertip of the finger 25 and a function of acquiring fingerprint information of the fingertip.

[0073] The above is the description of the specific example.

[0074] This embodiment can be implemented in appropriate combination with at least some of the other embodiments described in this specification.

[0075] (Embodiment 2) In this embodiment, a display device that can be used for the display unit of the composite device according to one aspect of the present invention will be described. The display device exemplified below includes a light-emitting element and a light-receiving element. The display device has a function of displaying an image, a function of performing position detection using reflected light from a detection target, and a function of imaging a fingerprint or the like using reflected light from a detection target. The display device exemplified below can also be said to have a function as a touch panel and a function as a fingerprint sensor.

[0076] A display device according to one aspect of the present invention includes a light-emitting element (light-emitting device) that emits first light and a light-receiving element (light-receiving device) that receives the first light. The light-receiving element is preferably a photoelectric conversion element. As the first light, visible light or infrared light can be used. When infrared light is used as the first light, in addition to the light-emitting element that emits the first light, a configuration can be adopted that includes a light-emitting element that emits visible light.

[0077] Further, the display device has a pair of substrates (also referred to as a first substrate and a second substrate). The light-emitting element ​​​​​​​The light-emitting element and the light-receiving element are disposed between a first substrate and a second substrate. The first substrate is located on the display surface side, and the second substrate is located on the side opposite to the display surface side.

[0078] The visible light emitted from the light-emitting element is emitted to the outside through the first substrate. By having a plurality of such light-emitting elements arranged in a matrix, the display device can display an image. be able to.

[0079] In addition, the first light emitted from the light-emitting element reaches the surface of the first substrate. Here, when an object touches the surface of the first substrate, the first light is scattered at the interface between the first substrate and the object, and a part of the scattered light is incident on the light-receiving element. When the light-receiving element receives the first light, it can convert it into an electrical signal corresponding to the intensity and output it. By having a plurality of light-receiving elements arranged in a matrix, the display device can detect the position information, shape, etc. of the object touching the first substrate. That is, the display device can function as an image sensor panel, a touch sensor panel, etc. a part of the scattered light is incident on the light-receiving element. When the light-receiving element receives the first light, it can convert it into an electrical signal corresponding to the intensity and output it. By having a plurality of light-receiving elements arranged in a matrix, the display device can detect the position information, shape, etc. of the object touching the first substrate. That is, the display device can function as an image sensor panel, a touch sensor panel, etc. In addition, the first light emitted from the light-emitting element reaches the surface of the first substrate. Here, when an object touches the surface of the first substrate, the first light is scattered at the interface between the first substrate and the object, and a part of the scattered light is incident on the light-receiving element. When the light-receiving element receives the first light, it can convert it into an electrical signal corresponding to the intensity and output it. By having a plurality of light-receiving elements arranged in a matrix, the display device can detect the position information, shape, etc. of the object touching the first substrate. That is, the display device can function as an image sensor panel, a touch sensor panel, etc. In addition, the first light emitted from the light-emitting element reaches the surface of the first substrate. Here, when an object touches the surface of the first substrate, the first light is scattered at the interface between the first substrate and the object, and ]a part of the scattered light is incident on the light-receiving element. When the light-receiving element receives the first light, it can convert it into an electrical signal corresponding to the intensity and output it. By having a plurality of light-receiving elements arranged in a matrix, the display device can detect the position information, shape, etc. of the object touching the first substrate. That is, the display device can function as an image sensor panel, a touch sensor panel, etc.

[0080] Even when the object does not touch the surface of the first substrate, the first light transmitted through the first substrate is reflected or scattered on the object surface, and the reflected light or scattered light is incident on the light-receiving element through the first substrate. Therefore, the display device can also be used as a non-contact touch sensor panel (also referred to as a near-touch panel). Even when the object does not touch the surface of the first substrate, the first light transmitted through the first substrate is reflected or scattered on the object surface, and the reflected light or scattered light is incident on the light-receiving element through the first substrate. Therefore, the display device can also be used as a non-contact touch sensor panel (also referred to as a near-touch panel). Even when the object does not touch the surface of the first substrate, the first light transmitted through the first substrate is reflected or scattered on the object surface, and the reflected light or scattered light is incident on the light-receiving element through the first substrate. Therefore, the display device can also be used as a non-contact touch sensor panel (also referred to as a near-touch panel). Even when the object does not touch the surface of the first substrate, the first light transmitted through the first substrate is reflected or scattered on the object surface, and the reflected light or scattered light is incident on the light-receiving element through the first substrate. Therefore, the display device can also be used as a non-contact touch sensor panel (also referred to as a near-touch panel).

[0081] When visible light is used as the first light, the first light used for image display can be used as the light source of the touch sensor. At this time, the light-emitting element functions as a display element and light When visible light is used as the first light, the first light used for image display can be used as the light source of the touch sensor. At this time, the light-emitting element functions as a display element and light In order to also serve as a source, the configuration of the display device can be simplified. On the other hand, when using infrared light as the first light, since it is not visible to the user, imaging or sensing by the light receiving element can be performed without degrading the visibility of the display image.

[0082] When using infrared light as the first light, it preferably contains infrared light, preferably near-infrared light. In particular, near-infrared light having one or more peaks in the range of 700 nm or more and 2500 nm or less in wavelength can be preferably used. In particular, by using light having one or more peaks in the range of 750 nm or more and 1000 nm or less in wavelength, the range of material selection for the active layer of the light receiving element is widened, which is preferable.

[0083] By touching the surface of the display device with a fingertip, the shape of the fingerprint can be imaged. A fingerprint has concave and convex portions. When a finger touches the light guide plate, the first light is easily scattered at the convex portions of the fingerprint that touch the surface of the first substrate. Therefore, the intensity of the scattered light incident on the light receiving element that overlaps with the convex portion of the fingerprint is large, and the intensity of the scattered light incident on the light receiving element that overlaps with the concave portion is small. Accordingly, the fingerprint can be imaged. A device having the display device according to one aspect of the present invention can perform fingerprint authentication, which is one type of biometric authentication, using the imaged fingerprint image.

[0084] In addition, the display device can also image blood vessels such as fingers and hands, particularly veins. For example, light having a wavelength of 760 nm and in the vicinity thereof is not absorbed by reduced hemoglobin in the vein, so by receiving the reflected light from the palm or finger of the hand with the light receiving element and imaging it, the position of the vein can be detected. A device having the display device according to one aspect of the present invention can use the imaged vein image ​​​​​​It is possible to perform vein authentication, which is a type of biometric authentication, by using this.

[0085] In addition, a device having the display device according to one aspect of the present invention can also perform touch sensing, fingerprint authentication and vein authentication simultaneously. As a result, it is possible to execute biometric authentication with a high security level at low cost without increasing the number of components.

[0086] The light receiving element is preferably an element capable of receiving both visible light and infrared light. At this time it is preferable to have both a light emitting element that emits infrared light and a light emitting element that emits visible light as the light emitting element. As a result, by receiving the reflected light reflected by the user's finger using visible light with the light receiving element, the shape of the fingerprint can be imaged. Furthermore, the shape of the vein can be imaged using infrared light. As a result, both fingerprint authentication and vein authentication can be executed with one display device. Also, fingerprint imaging and vein imaging may be executed at different timings or simultaneously. By performing fingerprint imaging and vein imaging simultaneously, it is possible to obtain image data including both fingerprint shape information and vein shape information, and more accurate biometric authentication can be realized.

[0087] In addition, the display device according to one aspect of the present invention may have a function of detecting the health state of the user For example, by utilizing the fact that the reflectance and transmittance with respect to visible light and infrared light change according to changes in the oxygen saturation in the blood, and obtaining the time modulation of the oxygen saturation, it becomes possible to measure the heart rate. Also, the glucose concentration in the dermis, the triglyceride concentration in the blood, etc. can also be measured by infrared light or visible light. The display device according to one aspect of the present invention ​ A device having a setting can obtain information that serves as an indicator of the user's health status and can be used as a healthcare device.

[0088] In addition, the first substrate can be a sealing substrate for sealing the light-emitting element, a protective film, or the like. Also, a resin layer for bonding these may be provided between the first substrate and the second substrate.

[0089] Here, for the light-emitting element, it is preferable to use an EL element such as an OLED (Organic Light Emitting Diode) or a QLED (Quantum-dot Light Emitting D iode). Examples of the light-emitting substance of the EL element include a substance that emits fluorescence (fluorescent material), a substance that emits phosphorescence (phosphorescent material), an inorganic compound (quantum dot material, etc.), a substance that exhibits thermally activated delayed fluorescence (thermally activated delayed fluorescence: TADF) material and the like. Also, as the light-emitting element, an LED such as a micro LED (Light Emitti ng Diode) can also be used.

[0090] As the light-receiving element, for example, a pn-type or pin-type photodiode can be used. The light-receiving element functions as a photoelectric conversion element that detects the light incident on the light-receiving element and generates electric charges. The amount of electric charges generated by the photoelectric conversion element is determined according to the amount of incident light. In particular, it is preferable to use an organic photodiode having a layer containing an organic compound as the light-receiving element. The organic photodiode is easy to thin, lighten, and increase in area, and Due to its high degree of freedom in shape and design, it can be applied to various display devices.

[0091] The light-emitting element can have, for example, a stacked structure including a light-emitting layer between a pair of electrodes. Also the light-receiving element can have a stacked structure including an active layer between a pair of electrodes. For the active layer of the light-receiving element a semiconductor material can be used. For example, an inorganic semiconductor material such as silicon can be used.

[0092] Also, it is preferable to use an organic compound for the active layer of the light-receiving element. At this time, it is preferable to provide one of the electrodes (also referred to as a pixel electrode) of the light-emitting element and the light-receiving element on the same surface. Further it is more preferable that the other electrode of the light-emitting element and the light-receiving element is an electrode formed by a continuous single conductive layer ( also referred to as a common electrode). Furthermore, it is more preferable that the light-emitting element and the light-receiving element have a common layer. Thereby, the manufacturing process when manufacturing the light-emitting element and the light-receiving element can be simplified, the manufacturing cost can be reduced, and the manufacturing yield can be improved can be achieved.

[0093] Hereinafter, more specific examples will be described with reference to the drawings.

[0094] [Configuration Example 1 of Display Panel] [Configuration Example 1-1] FIG. 6A shows a schematic diagram of a display panel 50. The display panel 50 includes a substrate 51, a substrate 52, a light-receiving element 53, a light-emitting element 57R, a light-emitting element 57G, a light-emitting element 57B, a functional layer 55, etc.

[0095] The light-emitting elements 57R, 57G, 57B, and the light-receiving element 53 are provided between the substrate 51 and the substrate 52.

[0096] ​​The light-emitting elements 57R, 57G, and 57B emit red (R), green (G ), or blue (B) light, respectively.

[0097] The display panel 50 has a plurality of pixels arranged in a matrix. One pixel has 1 or more sub-pixels. One sub-pixel has one light-emitting element. For example, the pixel may have a configuration with 3 sub-pixels (3 colors of R, G, B, or 3 colors of yellow (Y), cyan (C), and magenta (M), etc.), or a configuration with 4 sub-pixels (4 colors of R, G, B, white (W), or 4 colors of R, G, B, Y, etc.) can be applied. Furthermore, the pixel has a light-receiving element 53. The light-receiving element 53 may be provided in all pixels, or may be provided in some pixels. Also, one pixel may have a plurality of light-receiving elements 53.

[0098] FIG. 6A shows a state where the finger 60 touches the surface of the substrate 52. Part of the light emitted by the light-emitting element 57G is reflected or scattered at the contact portion between the substrate 52 and the finger 60. Then, part of the reflected light or scattered light is incident on the light-receiving element 53, whereby it can be detected that the finger 60 has touched the substrate 52. That is, the display panel 50 can function as a touch panel.

[0099] The functional layer 55 has a circuit for driving the light-emitting elements 57R, 57G, and 57B, and a circuit for driving the light-receiving element 53. Switches, transistors, capacitors, wirings, etc. are provided in the functional layer 55. Note that when driving the light-emitting elements 57R, 57G, and 57B , and the light-receiving element 53 in a passive matrix method, a configuration without providing switches or transistors may also be used.

[0100] The display panel 50 may have a function of detecting the fingerprint of the finger 60. FIG. 6B schematically shows an enlarged view of the contact portion in a state where the finger 60 touches the substrate 52. Also, FIG. 6B shows the light emitting elements 57 and the light receiving elements 53 arranged alternately. The finger 60 has a fingerprint formed by concave portions and convex portions. Therefore, as shown in FIG. 6B, the convex portions of the fingerprint touch the substrate 52, and scattered light (indicated by the broken line arrow) is generated at these contact surfaces.

[0101] The intensity distribution of the scattered light scattered at the contact surface between the finger 60 and the substrate 52 is such that the intensity in the direction perpendicular to the contact surface is the highest, and the intensity distribution becomes lower as the angle in the oblique direction becomes larger. Therefore, the intensity of the light received by the light receiving element 53 located directly below the contact surface (overlapping the contact surface) becomes the highest. Also, among the scattered light, the light with a scattering angle of a predetermined angle or more is totally reflected on the other surface of the substrate 52 (the surface opposite to the contact surface) and does not pass to the light receiving element 53 side. Therefore, a clear fingerprint shape can be imaged. The intensity distribution of the scattered light scattered at the contact surface between the finger 60 and the substrate 52 is such that the intensity in the direction perpendicular to the contact surface is the highest, and the intensity distribution becomes lower as the angle in the oblique direction becomes larger. Therefore, the intensity of the light received by the light receiving element 53 located directly below the contact surface (overlapping the contact surface) becomes the highest. Also, among the scattered light, the light with a scattering angle of a predetermined angle or more is totally reflected on the other surface of the substrate 52 (the surface opposite to the contact surface) and does not pass to the light receiving element 53 side. Therefore, a clear fingerprint shape can be imaged. occurs.

[0102] As shown in FIG. 6B, the intensity distribution of the scattered light scattered at the contact surface between the finger 60 and the substrate 52 is such that the intensity in the direction perpendicular to the contact surface is the highest, and the intensity distribution becomes lower as the angle in the oblique direction becomes larger. Therefore, the intensity of the light received by the light receiving element 53 located directly below the contact surface (overlapping the contact surface) becomes the highest. Also, among the scattered light, the light with a scattering angle of a predetermined angle or more is totally reflected on the other surface of the substrate 52 (the surface opposite to the contact surface) and does not pass to the light receiving element 53 side. Therefore, a clear fingerprint shape can be imaged. is the highest, and the intensity distribution becomes lower as the angle in the oblique direction becomes larger. Therefore, the intensity of the light received by the light receiving element 53 located directly below the contact surface (overlapping the contact surface) becomes the highest. Also, among the scattered light, the light with a scattering angle of a predetermined angle or more is totally reflected on the other surface of the substrate 52 (the surface opposite to the contact surface) and does not pass to the light receiving element 53 side. Therefore, a clear fingerprint shape can be imaged. is the highest, and the intensity distribution becomes lower as the angle in the oblique direction becomes larger. Therefore, the intensity of the light received by the light receiving element 53 located directly below the contact surface (overlapping the contact surface) becomes the highest. Also, among the scattered light, the light with a scattering angle of a predetermined angle or more is totally reflected on the other surface of the substrate 52 (the surface opposite to the contact surface) and does not pass to the light receiving element 53 side. Therefore, a clear fingerprint shape can be imaged. 3 becomes the highest. Also, among the scattered light, the light with a scattering angle of a predetermined angle or more is totally reflected on the other surface of the substrate 52 (the surface opposite to the contact surface) and does not pass to the light receiving element 53 side. Therefore, a clear fingerprint shape can be imaged. is totally reflected on the other surface of the substrate 52 (the surface opposite to the contact surface) and does not pass to the light receiving element 53 side. Therefore, a clear fingerprint shape can be imaged. By setting the arrangement interval of the light receiving elements 53 to be smaller than the distance between two convex portions of the fingerprint, preferably smaller than the distance between an adjacent concave portion and convex portion, a clear fingerprint image can be obtained.

[0103] Since the distance between the concave and convex portions of a human fingerprint is approximately 200 μm, for example, the arrangement interval of the light receiving elements 53 is 400 μm or less, preferably 200 μm or less, more preferably 150 μm or less By setting the arrangement interval of the light receiving elements 53 to be smaller than the distance between two convex portions of the fingerprint, preferably smaller than the distance between an adjacent concave portion and convex portion, a clear fingerprint image can be obtained. Since the distance between the concave and convex portions of a human fingerprint is approximately 200 μm, for example, the arrangement interval of the light receiving elements 53 is 400 μm or less, preferably 200 μm or less, more preferably 150 μm or less , more preferably 100 μm or less, even more preferably 50 μm or less, and 1 μm or more , preferably 10 μm or more, more preferably 20 μm or more. is the highest, and the intensity distribution becomes lower as the angle in the oblique direction becomes larger. Therefore, the intensity of the light received by the light receiving element 53 located directly below the contact surface (overlapping the contact surface) becomes the highest. Also, among the scattered light, the light with a scattering angle of a predetermined angle or more is totally reflected on the other surface of the substrate 52 (the surface opposite to the contact surface) and does not pass to the light receiving element 53 side. Therefore, a clear fingerprint shape can be imaged.

[0104] An example of an image of a fingerprint captured by the display panel 50 is shown in FIG. 6C. In FIG. 6C, within the imaging range 63 the outline of the finger 60 is indicated by a dashed line, and the outline of the contact portion 61 is indicated by a one-dot chain line. Within the contact portion 61 due to the difference in the amount of light incident on the light receiving element 53, a fingerprint 62 with high contrast can be captured.

[0105] The display panel 50 can also function as a touch panel or a tablet. In FIG. 6D, the state where the tip of the stylus 65 is in contact with the substrate 52 and is being slid in the direction of the dashed arrow is shown.

[0106] As shown in FIG. 6D, the scattered light scattered at the contact surface between the tip of the stylus 65 and the substrate 52 is incident on the light receiving element 53 located in the portion overlapping the contact surface, so that the position of the tip of the stylus 65 can be detected with high precision.

[0107] FIG. 6E shows an example of the locus 66 of the stylus 65 detected by the display panel 50. The display panel 50 can detect the position of a detected object such as the stylus 65 with high positional accuracy Therefore, in a drawing application or the like, it is also possible to perform high-definition drawing. Also, unlike the case of using a capacitive touch sensor or an electromagnetic induction type touch pen, since the position of a detected object with high insulation can be detected, regardless of the material of the tip portion of the stylus 65 various writing utensils (for example, a pen, a glass pen, a feather pen, etc.) can be used.

[0108] Here, FIGS. 6F to 6H show an example of a pixel applicable to the display panel 50.

[0109] The pixels shown in FIGS. 6F and 6G each have a red (R) light-emitting element 57R, a green (G) light-emitting element 57G, a blue (B) light-emitting element 57B, and a light-receiving element 53. Each pixel has a pixel circuit for driving the light-emitting element 57R, the light-emitting element 57G, the light-emitting element 57B, and the light-receiving element 53, respectively.

[0110] FIG. 6F shows an example in which three light-emitting elements and one light-receiving element are arranged in a 2×2 matrix. FIG. 6G shows an example in which three light-emitting elements are arranged in a row, and a horizontally long one light-receiving element 53 is arranged below them.

[0111] The pixel shown in FIG. 6H is an example having a white (W) light-emitting element 57W. Here, four light-emitting elements are arranged in a row, and a light-receiving element 53 is arranged below them.

[0112] Note that the configuration of the pixel is not limited to the above, and various arrangement methods can be adopted.

[0113] 〔Configuration Example 1-2〕 Hereinafter, an example of a configuration including a light-emitting element that exhibits visible light, a light-emitting element that exhibits infrared light, and a light-receiving element will be described.

[0114] The display panel 50A shown in FIG. 7A has a light-emitting element 57IR in addition to the configuration exemplified in FIG. 6A. The light-emitting element 57IR is a light-emitting element that emits infrared light IR. At this time, it is preferable to use, as the light-receiving element 53, an element that can receive at least the infrared light IR emitted by the light-emitting element 57IR. Further, it is more preferable to use, as the light-receiving element 53, an element that can receive both visible light and infrared light.

[0115] ​​​​As shown in Fig. 7A, when a finger 60 touches the substrate 52, infrared light IR emitted from the light-emitting element 57IR is reflected or scattered by the finger 60, and a part of the reflected light or scattered light is incident on the light-receiving element 53, thereby enabling the acquisition of the position information of the finger 60.

[0116] Figs. 7B to 7D show an example of a pixel applicable to the display panel 50A.

[0117] Fig. 7B shows an example in which three light-emitting elements are arranged in a row, and below them, the light-emitting element 57IR and the light-receiving element 53 are arranged side by side horizontally. Also, Fig. 6C shows an example in which four light-emitting elements including the light-emitting element 57IR are arranged in a row, and below them, the light-receiving element 53 is arranged .

[0118] Fig. 7C shows an example in which three light-emitting elements and a light-receiving element 53 are arranged in four directions centered on the light-emitting element 57IR.

[0119] In the pixels shown in Figs. 7B to 7D, the light-emitting elements among themselves and the light-emitting elements and the light-receiving element can be exchanged with each other.

[0120] The above is the description of Configuration Example 2.

[0121] [Configuration Example 2 of Display Panel] [Configuration Example 2-1] Fig. 8A shows a schematic cross-sectional view of the display panel 100A.

[0122] The display panel 100A has a light-receiving element 110 and a light-emitting element 190. The light-receiving element 11 0 has a pixel electrode 111, a common layer 112, an active layer 113, a common layer 114, and a common electrode 115 . The light-emitting element 190 has a pixel electrode 191, a common layer 112, a light-emitting layer 193, a common layer 1 ​14. and has a common electrode 115.

[0123] The pixel electrode 111, the pixel electrode 191, the common layer 112, the active layer 113, the light-emitting layer 193, and the common layer 114 and the common electrode 115 may each have a single-layer structure or a laminated structure.

[0124] The pixel electrode 111 and the pixel electrode 191 are located on the insulating layer 214. The pixel electrode 111 and the pixel electrode 191 can be formed of the same material and in the same process.

[0125] The common layer 112 is located on the pixel electrode 111 and the pixel electrode 191. The common layer 112 is a layer commonly used for the light-receiving element 110 and the light-emitting element 190.

[0126] The active layer 113 overlaps with the pixel electrode 111 via the common layer 112. The light-emitting layer 193 overlaps with the pixel electrode 191 via the common layer 112. The active layer 113 contains a first organic compound, and the light-emitting layer 193 contains a second organic compound different from the first organic compound.

[0127] The common layer 114 is located on the common layer 112, the active layer 113, and the light-emitting layer 193. The common layer 114 is a layer commonly used for the light-receiving element 110 and the light-emitting element 190.

[0128] The common electrode 115 has a portion that overlaps with the pixel electrode 111 via the common layer 112, the active layer 113, and the common layer 114. Also, the common electrode 115 has a portion that overlaps with the pixel electrode 191 via the common layer 112, the light-emitting layer 193 and the common layer 114. The common electrode 115 is a layer commonly used for the light-receiving element 110 and the light-emitting element 190.

[0129] ​In the display panel of the present embodiment, an organic compound is used for the active layer 113 of the light receiving element 110. . The light receiving element 110 can have the same structure as the light emitting element 190 (EL element) for the layers other than the active layer 113. . Therefore, by simply adding a step of forming the active layer 113 to the manufacturing process of the light emitting element 190, the light receiving element 110 can be formed in parallel with the formation of the light emitting element 190. . Further, the light emitting element 190 and the light receiving element 110 can be formed on the same substrate. . Therefore, the light receiving element 110 can be incorporated into the display panel without significantly increasing the manufacturing process. . .

[0130] In the display panel 100A, an example is shown in which the light receiving element 110 and the light emitting element 190 have the same structure except that the active layer 113 of the light receiving element 110 and the light emitting layer 193 of the light emitting element 190 are made separately. . However, the structures of the light receiving element 110 and the light emitting element 190 are not limited to this. The light receiving element 110 and the light emitting element 190 may have layers that are made separately from each other in addition to the active layer 113 and the light emitting layer 193 (see the display panels 100D, 100E, and 100F described later). . . The light receiving element 110 and the light emitting element 190 preferably have one or more layers that are commonly used (common layers). . This makes it possible to incorporate the light receiving element 110 into the display panel without significantly increasing the manufacturing process. . . .

[0131] The display panel 100A has a light receiving element 110, a light emitting element 190, a transistor 131, a transistor 132, etc. between a pair of substrates (substrate 151 and substrate 152). .

[0132] In the light receiving element 110, it is located between the pixel electrode 111 and the common electrode 115, respectively. The common layer 112, the active layer 113, and the common layer 114 can also be referred to as organic layers (layers containing organic compounds). The pixel electrode 111 preferably has a function of reflecting visible light. The end portion of the pixel electrode 111 is covered by the partition wall 216. The common electrode 115 has a function of transmitting visible light.

[0133] The light receiving element 110 has a function of detecting light. Specifically, the light receiving element 110 is a photoelectric conversion element that receives the light 122 incident from the outside through the substrate 152 and converts it into an electrical signal.

[0134] A light shielding layer BM is provided on the surface of the substrate 152 on the side of the substrate 151. The light shielding layer BM has openings at positions overlapping the light receiving element 110 and at positions overlapping the light emitting element 190. By providing the light shielding layer BM, the range in which the light receiving element 110 detects light can be controlled.

[0135] As the light shielding layer BM, a material that blocks the light emitted from the light emitting element can be used. The light shielding layer BM preferably absorbs visible light. As the light shielding layer BM, for example, a black matrix can be formed using a metal material, or a resin material containing a pigment (such as carbon black) or a dye. The light shielding layer BM may have a laminated structure of a red color filter, a green color filter, and a blue color filter.

[0136] Here, a part of the light emitted from the light emitting element 190 may be reflected inside the display panel 100A and incident on the light receiving element 110. The light shielding layer BM can suppress the influence of such stray light. For example, when the light shielding layer BM is not provided, the light emitted from the light emitting element 190 123a is reflected by the substrate 152, and the reflected light 123b is incident on the light receiving element 110. By providing the light shielding layer BM, the incidence of the reflected light 123b on the light receiving element 110 can be suppressed. Thereby, noise can be reduced and the sensitivity of the sensor using the light receiving element 110 can be enhanced.

[0137] In the light emitting element 190, the common layer 112, the light emitting layer 193, and the common layer 114, which are respectively located between the pixel electrode 191 and the common electrode 115, can also be referred to as an EL layer. The pixel electrode 191 preferably has a function of reflecting visible light. The end portion of the pixel electrode 191 is covered by the partition wall 216. The pixel electrode 111 and the pixel electrode 191 are electrically insulated from each other by the partition wall 216. The common electrode 115 has a function of transmitting visible light.

[0138] The light emitting element 190 has a function of emitting visible light. Specifically, the light emitting element 190 is an electroluminescent element that emits light 121 toward the substrate 152 side by applying a voltage between the pixel electrode 191 and the common electrode 115.

[0139] The light emitting layer 193 is preferably formed so as not to overlap with the light receiving region of the light receiving element 110. Thereby, absorption of the light 122 by the light emitting layer 193 can be suppressed, and the amount of light irradiated to the light receiving element 110 can be increased.

[0140] The pixel electrode 111 is electrically connected to the source or drain of the transistor 131 through an opening provided in the insulating layer 214. The end portion of the pixel electrode 111 is covered by the partition wall 216.

[0141] ​​​​​​​​​​​The pixel electrode 191 is electrically connected to the source or drain of the transistor 132 through an opening provided in the insulating layer 214. The end of the pixel electrode 191 is covered by the partition wall 216. The transistor 132 has a function of controlling the driving of the light-emitting element 190. The transistor 131 and the transistor 132 are in contact with each other on the same layer (substrate 151 in FIG. 8A). At least a part of the circuit electrically connected to the light-receiving element 110 is preferably formed of the same material and in the same process as the circuit electrically connected to the light-emitting element 190. This can reduce the thickness of the display panel and simplify the manufacturing process compared to the case where the two circuits are formed separately. Preferably, the light-receiving element 110 and the light-emitting element 190 are each covered by the protective layer 195. In FIG. 8A, the protective layer 195 is provided in contact with the common electrode 115. By providing the protective layer 195, it is possible to suppress the entry of impurities such as water into the light-receiving element 110 and the light-emitting element 190 and improve the reliability of the light-receiving element 110 and the light-emitting element 190. Also, the protective layer 195 and the substrate 152 are bonded together by the adhesive layer 142.

[0142] As shown in FIG. 9A, it is not necessary to have a protective layer on the light-receiving element 110 and the light-emitting element 190. In FIG. 9A, the common electrode 115 and the substrate 152 are bonded together by the adhesive layer 142. As shown in FIG. 9B, a configuration without the light-shielding layer BM may also be used.

[0143] At least a part of the circuit electrically connected to the light-receiving element 110 is preferably formed of the same material and in the same process as the circuit electrically connected to the light-emitting element 190. This can reduce the thickness of the display panel and simplify the manufacturing process compared to the case where the two circuits are formed separately. Preferably, the light-receiving element 110 and the light-emitting element 190 are each covered by the protective layer 195. In FIG. 8A, the protective layer 195 is provided in contact with the common electrode 115. By providing the protective layer 195, it is possible to suppress the entry of impurities such as water into the light-receiving element 110 and the light-emitting element 190 and improve the reliability of the light-receiving element 110 and the light-emitting element 190. Also, the protective layer 195 and the substrate 152 are bonded together by the adhesive layer 142. Preferably, the light-receiving element 110 and the light-emitting element 190 are each covered by the protective layer 195. In FIG. 8A, the protective layer 195 is provided in contact with the common electrode 115. By providing the protective layer 195, it is possible to suppress the entry of impurities such as water into the light-receiving element 110 and the light-emitting element 190 and improve the reliability of the light-receiving element 110 and the light-emitting element 190. Also, the protective layer 195 and the substrate 152 are bonded together by the adhesive layer 142. Preferably, the light-receiving element 110 and the light-emitting element 190 are each covered by the protective layer 195. In FIG. 8A, the protective layer 195 is provided in contact with the common electrode 115. By providing the protective layer 195, it is possible to suppress the entry of impurities such as water into the light-receiving element 110 and the light-emitting element 190 and improve the reliability of the light-receiving element 110 and the light-emitting element 190. Also, the protective layer 195 and the substrate 152 are bonded together by the adhesive layer 142.

[0144] Preferably, the light-receiving element 110 and the light-emitting element 190 are each covered by the protective layer 195. In FIG. 8A, the protective layer 195 is provided in contact with the common electrode 115. By providing the protective layer 195, it is possible to suppress the entry of impurities such as water into the light-receiving element 110 and the light-emitting element 190 and improve the reliability of the light-receiving element 110 and the light-emitting element 190. Also, the protective layer 195 and the substrate 152 are bonded together by the adhesive layer 142. Preferably, the light-receiving element 110 and the light-emitting element 190 are each covered by the protective layer 195. In FIG. 8A, the protective layer 195 is provided in contact with the common electrode 115. By providing the protective layer 195, it is possible to suppress the entry of impurities such as water into the light-receiving element 110 and the light-emitting element 190 and improve the reliability of the light-receiving element 110 and the light-emitting element 190. Also, the protective layer 195 and the substrate 152 are bonded together by the adhesive layer 142. By providing the protective layer 195, it is possible to suppress the entry of impurities such as water into the light-receiving element 110 and the light-emitting element 190 and improve the reliability of the light-receiving element 110 and the light-emitting element 190. By providing the protective layer 195, it is possible to suppress the entry of impurities such as water into the light-receiving element 110 and the light-emitting element 190 and improve the reliability of the light-receiving element 110 and the light-emitting element 190. Also, the protective layer 195 and the substrate 152 are bonded together by the adhesive layer 142.

[0145] As shown in FIG. 9A, it is not necessary to have a protective layer on the light-receiving element 110 and the light-emitting element 190. In FIG. 9A, the common electrode 115 and the substrate 152 are bonded together by the adhesive layer 142. As shown in FIG. 9A, it is not necessary to have a protective layer on the light-receiving element 110 and the light-emitting element 190. In FIG. 9A, the common electrode 115 and the substrate 152 are bonded together by the adhesive layer 142. As shown in FIG. 9A, it is not necessary to have a protective layer on the light-receiving element 110 and the light-emitting element 190. In FIG. 9A, the common electrode 115 and the substrate 152 are bonded together by the adhesive layer 142.

[0146] As shown in FIG. 9B, a configuration without the light-shielding layer BM may also be used. Since the light-receiving area of the optical element 110 can be increased, the sensitivity of the sensor can be further enhanced.

[0147] 〔Configuration Example 2-2〕 FIG. 8B shows a cross-sectional view of the display panel 100B. In the following description of the display panel, the description of the same configuration as the previously described display panel may be omitted.

[0148] The display panel 100B shown in FIG. 8B has a lens 149 in addition to the configuration of the display panel 100A.

[0149] The lens 149 is provided at a position overlapping the light-receiving element 110. In the display panel 100B the lens 149 is provided in contact with the substrate 152. The lens 149 included in the display panel 100B is a convex lens having a convex surface on the substrate 151 side. Note that a convex lens having a convex surface on the substrate 152 side may be disposed in a region overlapping the light-receiving element 110.

[0150] When both the light-shielding layer BM and the lens 149 are formed on the same surface of the substrate 152, the formation order does not matter. FIG. 8B shows an example in which the lens 149 is formed first, but the light-shielding layer BM may be formed first instead. In FIG. 8B, the end portion of the lens 149 is covered by the light-shielding layer BM.

[0151] The display panel 100B is configured such that light 122 enters the light-receiving element 110 through the lens 149. Having the lens 149 can increase the amount of light 122 incident on the light-receiving element 110 compared to the case where the lens 149 is not provided. As a result, the sensitivity of the light-receiving element 110 can be enhanced.

[0152] As a method for forming the lens used in the display panel of the present embodiment, on the substrate or on the light-receiving element A lens such as a microlens may be directly formed thereon, or a lens array such as a separately fabricated microlens array may be bonded to the substrate. array may be bonded to the substrate.

[0153] 〔Configuration Example 2-3〕 FIG. 8C shows a schematic cross-sectional view of the display panel 100C. The display panel 100C does not have the substrate 151, the substrate 152, and the partition wall 216, and is different from the display panel 100A in that it has the substrate 153, the substrate 154, the adhesive layer 155, the insulating layer 212, and the partition wall 217. 1, the substrate 152, and the partition wall 216, and is different from the display panel 100A in that it has the substrate 153, the substrate 154, the adhesive layer 155, the insulating layer 212, and the partition wall 217. The substrate 153 and the insulating layer 212 are bonded together by an adhesive layer 155. The substrate 154 and the protective layer 195 are bonded together by an adhesive layer 142.

[0154] The display panel 100C is configured by transferring an insulating layer 212, a transistor 131, a transistor 132, a light receiving element 110, a light emitting element 190, etc., formed on a fabrication substrate, onto the substrate 153. The substrate 153 and the substrate 154 preferably each have flexibility. This can enhance the flexibility of the display panel 100C. For example, it is preferable to use resin for the substrate 153 and the substrate 154, respectively. The substrate 154 and the protective layer 195 are bonded together by an adhesive layer 142.

[0155] The display panel 100C is configured by transferring an insulating layer 212, a transistor 131, a transistor 132, a light receiving element 110, a light emitting element 190, etc., formed on a fabrication substrate, onto the substrate 153. The substrate 153 and the substrate 154 preferably each have flexibility. This can enhance the flexibility of the display panel 100C. For example, it is preferable to use resin for the substrate 153 and the substrate 154, respectively. The display panel 100C is configured by transferring an insulating layer 212, a transistor 131, a transistor 132, a light receiving element 110, a light emitting element 190, etc., formed on a fabrication substrate, onto the substrate 153. The substrate 153 and the substrate 154 preferably each have flexibility. This can enhance the flexibility of the display panel 100C. For example, it is preferable to use resin for the substrate 153 and the substrate 154, respectively. The substrate 153 and the substrate 154 preferably each have flexibility. This can enhance the flexibility of the display panel 100C. For example, it is preferable to use resin for the substrate 153 and the substrate 154, respectively. The substrate 153 and the substrate 154 preferably each have flexibility. This can enhance the flexibility of the display panel 100C. For example, it is preferable to use resin for the substrate 153 and the substrate 154, respectively. ... For example, it is preferable to use resin for the substrate 153 and the substrate 154, respectively.

[0156] As the substrate 153 and the substrate 154, polyester resins such as polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyacrylonitrile resin, acrylic resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resin (nylon, aramid, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamine resin, etc. can be used. resin, acrylic resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resin (nylon, aramid, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamine resin, etc. can be used. resin, etc. can be used. Dimide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, poly propylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, cellulose nanofibers, etc. can be used. Glass with a thickness sufficient to have flexibility may be used for one or both of the substrates 153 and 154.

[0157] For the substrate of the display panel of the present embodiment, a film with high optical isotropy may be used. Examples of the film with high optical isotropy include triacetyl cellulose (TAC, also referred to as cellulose triacetate) film, cycloolefin polymer (COP) film, cycloolefin copolymer (COC) film, and acrylic film.

[0158] The partition wall 217 preferably absorbs the light emitted by the light-emitting element. As the partition wall 217, for example, a resin material containing a pigment or a dye can be used to form a black matrix. Alternatively, the partition wall 217 can be constituted by a colored insulating layer by using a brown resist material.

[0159] The light 123c emitted by the light-emitting element 190 may be reflected by the substrate 152 and the partition wall 217, and the reflected light 123d may enter the light-receiving element 110. In addition, the light 123c may pass through the partition wall 217 and be reflected by a transistor, wiring, etc., and the reflected light may enter the light-receiving element 110. By absorbing the light 123c by the partition wall 217, the entry of the reflected light 123d into the light-receiving element 110 can be suppressed. Thereby, noise can be reduced and the sensitivity of the sensor using the light-receiving element 110 can be increased.

[0160] The partition wall 217 preferably absorbs at least the wavelength of the light detected by the light receiving element 110. For example, when the light receiving element 110 detects the red light emitted by the light emitting element 190, the partition wall 217 preferably absorbs at least red light. For example, if the partition wall 217 has a blue color filter, it can absorb the red light 123c and suppress the reflection light 123d from entering the light receiving element 110.

[0161] 〔Configuration Example 2-4〕 In the above, an example in which the light emitting element and the light receiving element have two common layers has been shown, but the present invention is not limited to this. Hereinafter, examples in which the configuration of the common layer is different will be described.

[0162] FIG. 10A shows a schematic cross-sectional view of the display panel 100D. The display panel 100D is different from the display panel 10 0A in that it does not have the common layer 114 and has the buffer layer 184 and the buffer layer 194. The buffer layer 184 and the buffer layer 194 may each have a single-layer structure or a laminated structure.

[0163] In the display panel 100D, the light receiving element 110 includes a pixel electrode 111, a common layer 112, an active layer 113, a buffer layer 184, and a common electrode 115. Further, in the display panel 100 D, the light emitting element 190 includes a pixel electrode 191, a common layer 112, a light emitting layer 193, a buffer layer 194, and a common electrode 115.

[0164] In the display panel 100D, an example is shown in which the buffer layer 184 between the common electrode 115 and the active layer 113 and the buffer layer 194 between the common electrode 115 and the light emitting layer 193 are separately formed. As the buffer layer 184 and the buffer layer 194, for example, one of an electron injection layer and an electron transport layer Either one or both can be formed.

[0165] FIG. 10B shows a schematic cross-sectional view of the display panel 100E. The display panel 100E does not have the common layer 112 and is different from the display panel 10 0A in that it has the buffer layer 182 and the buffer layer 192. The buffer layer 182 and the buffer layer 192 may each be a single-layer structure or a laminated structure.

[0166] In the display panel 100E, the light-receiving element 110 has a pixel electrode 111, a buffer layer 182 , an active layer 113, a common layer 114, and a common electrode 115. Also, in the display panel 100 E, the light-emitting element 190 has a pixel electrode 191, a buffer layer 192, a light-emitting layer 193, a co mmon layer 114, and a common electrode 115.

[0167] In the display panel 100E, an example is shown in which the buffer layer 182 between the pixel electrode 111 and the active layer 113 is separated from the buffer layer 192 between the pixel electrode 191 and the light-emitting layer 193. As the buffer layer 182 and the buffer layer 192, for example, one or both of a hole injection layer and a hole transport layer can be formed. As the buffer layer 182 and the buffer layer 192, for example, one or both of a hole injection layer and a hole transport layer can be formed. Either one or both can be formed.

[0168] FIG. 10C shows a schematic cross-sectional view of the display panel 100F. The display panel 100F does not have the common layer 112 and the common layer 114 and is different from the display panel 100A in that it has the buffer layer 182, the buffer layer 184, the buffer layer 1 92, and the buffer layer 194.

[0169] In the display panel 100F, the light-receiving element 110 has a pixel electrode 111, a buffer layer 182 , an active layer 113, a buffer layer 184, and a common electrode 115. Also, in the display panel 1 In 00F, the light-emitting element 190 includes a pixel electrode 191, a buffer layer 192, and a light-emitting layer 193. It also includes a buffer layer 194 and a common electrode 115.

[0170] In the fabrication of the light-receiving element 110 and the light-emitting element 190, not only the active layer 113 and the light-emitting layer 193 are formed separately, but other layers can also be formed separately. That is, they can be fabricated separately.

[0171] In the display panel 100F, an example is shown where there is no common layer between the pair of electrodes (the pixel electrode 111 or the pixel electrode 191 and the common electrode 115) formed by the light-receiving element 110 and the light-emitting element 190. That is, an example is shown in which there is no common layer between the pair of electrodes (the pixel electrode 111 or the pixel electrode 191 and the common electrode 115) formed by the light-receiving element 110 and the light-emitting element 190. The light-receiving element 110 and the light-emitting element 190 included in the display panel 100F are fabricated by forming the pixel electrode 111 and the pixel electrode 191 of the same material and in the same process on the insulating layer 214, and then forming a buffer layer 182, an active layer 113, and a buffer layer 184 on the pixel electrode 111, and forming a buffer layer 192, a light-emitting layer 193, and a buffer layer 194 on the pixel electrode 191 respectively. After that, the common electrode 115 is formed so as to cover the buffer layer 184, the buffer layer 194, etc. The light-receiving element 110 and the light-emitting element 190 included in the display panel 100F are fabricated by forming the pixel electrode 111 and the pixel electrode 191 of the same material and in the same process on the insulating layer 214, and then forming a buffer layer 182, an active layer 113, and a buffer layer 184 on the pixel electrode 111, and forming a buffer layer 192, a light-emitting layer 193, and a buffer layer 194 on the pixel electrode 191 respectively. After that, the common electrode 115 is formed so as to cover the buffer layer 184, the buffer layer 194, etc. On the pixel electrode 111, a buffer layer 182, an active layer 113, and a buffer layer 184 are formed, and on the pixel electrode 191, a buffer layer 192, a light-emitting layer 193, and a buffer layer 194 are formed respectively. Then, the common electrode 115 is formed to cover the buffer layer 184, the buffer layer 194, etc. On the pixel electrode 111, a buffer layer 182, an active layer 113, and a buffer layer 184 are formed, and on the pixel electrode 191, a buffer layer 192, a light-emitting layer 193, and a buffer layer 194 are formed respectively. Then, the common electrode 115 is formed to cover the buffer layer 184, the buffer layer 194, etc. Thereafter, the common electrode 115 is formed to cover the buffer layer 184, the buffer layer 194, etc. Thereby, it can be fabricated.

[0172] Note that the manufacturing order of the stacked structure of the buffer layer 182, the active layer 113, and the buffer layer 184 and the stacked structure of the buffer layer 192, the light-emitting layer 193, and the buffer layer 194 is not particularly limited. For example, after forming the buffer layer 182, the active layer 113, and the buffer layer 184, the buffer layer 192, the light-emitting layer 193, and the buffer layer 194 may be formed. Conversely, before forming the buffer layer 182, the active layer 113, and the buffer layer 184, the buffer layer 192, the light-emitting layer 193, and the buffer layer 194 may be formed. Also, they may be alternately formed in the order of the buffer layer 182, the buffer layer 192, the active layer 113, the light-emitting layer 193, etc. For example, after depositing the buffer layer 182, the active layer 113, and the buffer layer 184, the buffer layer 192, the light-emitting layer 193, and the buffer layer 194 may be deposited. Conversely, before depositing the buffer layer 182, the active layer 113, and the buffer layer 184, the buffer layer 192, the light-emitting layer 193, and the buffer layer 194 may be deposited. Also, they may be alternately deposited in the order of the buffer layer 182, the buffer layer 192, the active layer 113, the light-emitting layer 193, etc. Conversely, before depositing the buffer layer 182, the active layer 113, and the buffer layer 184, the buffer layer 192, the light-emitting layer 193, and the buffer layer 194 may be deposited. Before depositing the buffer layer 182, the active layer 113, and the buffer layer 184, the buffer layer 192, the light-emitting layer 193, and the buffer layer 194 may be deposited. Also, they may be alternately deposited in the order of the buffer layer 182, the buffer layer 192, the active layer 113, the light-emitting layer 193, etc. That is, they may be alternately deposited in the order of the buffer layer 182, the buffer layer 192, the active layer 113, the light-emitting layer 193, etc.

[0173] [Example configuration 3 of the display panel] Hereinafter, a more specific configuration example of the display panel will be described.

[0174] [Configuration example 3-1] FIG. 11 shows a perspective view of the display panel 200A.

[0175] The display panel 200A has a configuration in which a substrate 151 and a substrate 152 are bonded together. In FIG. 1, the substrate 152 is shown by a broken line.

[0176] The display panel 200A has a display unit 162, a circuit 164, a wiring 165, etc. In FIG. 11 shows an example in which an IC (integrated circuit) 173 and an FPC 172 are mounted on the display panel 200A Therefore, the configuration shown in FIG. 11 can also be referred to as a display module having a display panel 200A, an IC, and an FPC

[0177] As the circuit 164, a scanning line driving circuit can be used.

[0178] The wiring 165 has a function of supplying signals and power to the display unit 162 and the circuit 164. The signals and power are input from the outside via the FPC 172 or are input to the wiring 165 from the IC 173

[0179] In FIG. 11, an example in which an IC 173 is provided on the substrate 151 by a COG (Chip On Glass) method or a COF (Chip On Film) method, etc. is shown. I C173 can be an IC having, for example, a scanning line driving circuit and a signal line driving circuit, etc. Also the display panel 200A and the display module may have a configuration without an IC. Also ​​​The IC may be mounted on the FPC by a COF method or the like.

[0180] FIG. 12 shows an example of a cross-section when a part of the region including the FPC 172, a part of the region including the circuit 164, a part of the region including the display unit 162, and a part of the region including the end portion of the display panel 200A shown in FIG. 11 are each cut. FIG. 12 shows an example of a cross-section when a part of the region including the FPC 172, a part of the region including the circuit 164, a part of the region including the display unit 162, and a part of the region including the end portion of the display panel 200A shown in FIG. 11 are each cut. FIG. 12 shows an example of a cross-section when a part of the region including the FPC 172, a part of the region including the circuit 164, a part of the region including the display unit 162, and a part of the region including the end portion of the display panel 200A shown in FIG. 11 are each cut.

[0181] The display panel 200A shown in FIG. 12 has a transistor 201, a transistor 205, a transistor 206, a light-emitting element 190, a light-receiving element 110, etc. between the substrate 151 and the substrate 152. The display panel 200A shown in FIG. 12 has a transistor 201, a transistor 205, a transistor 206, a light-emitting element 190, a light-receiving element 110, etc. between the substrate 151 and the substrate 152. The display panel 200A shown in FIG. 12 has a transistor 201, a transistor 205, a transistor 206, a light-emitting element 190, a light-receiving element 110, etc. between the substrate 151 and the substrate 152.

[0182] The substrate 152 and the insulating layer 214 are adhered via an adhesive layer 142. For the encapsulation of the light-emitting element 190 and the light-receiving element 110, a solid encapsulation structure or a hollow encapsulation structure can be applied. In FIG. 12, the space 143 surrounded by the substrate 152, the adhesive layer 142, and the insulating layer 214 is filled with an inert gas (such as nitrogen or argon), and a hollow encapsulation structure is applied. The adhesive layer 142 may be provided so as to overlap with the light-emitting element 190. Also, the space 143 surrounded by the substrate 152, the adhesive layer 142, and the insulating layer 214 may be filled with a resin different from the adhesive layer 142. For the encapsulation of the light-emitting element 190 and the light-receiving element 110, a solid encapsulation structure or a hollow encapsulation structure can be applied. In FIG. 12, the space 143 surrounded by the substrate 152, the adhesive layer 142, and the insulating layer 214 is filled with an inert gas (such as nitrogen or argon), and a hollow encapsulation structure is applied. The adhesive layer 142 may be provided so as to overlap with the light-emitting element 190. Also, the space 143 surrounded by the substrate 152, the adhesive layer 142, and the insulating layer 214 may be filled with a resin different from the adhesive layer 142. In FIG. 12, the space 143 surrounded by the substrate 152, the adhesive layer 142, and the insulating layer 214 is filled with an inert gas (such as nitrogen or argon), and a hollow encapsulation structure is applied. The adhesive layer 142 may be provided so as to overlap with the light-emitting element 190. Also, the space 143 surrounded by the substrate 152, the adhesive layer 142, and the insulating layer 214 may be filled with a resin different from the adhesive layer 142. In FIG. 12, the space 143 surrounded by the substrate 152, the adhesive layer 142, and the insulating layer 214 is filled with an inert gas (such as nitrogen or argon), and a hollow encapsulation structure is applied. The adhesive layer 142 may be provided so as to overlap with the light-emitting element 190. Also, the space 143 surrounded by the substrate 152, the adhesive layer 142, and the insulating layer 214 may be filled with a resin different from the adhesive layer 142. The adhesive layer 142 may be provided so as to overlap with the light-emitting element 190. Also, the space 143 surrounded by the substrate 152, the adhesive layer 142, and the insulating layer 214 may be filled with a resin different from the adhesive layer 142. The adhesive layer 142 may be provided so as to overlap with the light-emitting element 190. Also, the space 143 surrounded by the substrate 152, the adhesive layer 142, and the insulating layer 214 may be filled with a resin different from the adhesive layer 142. The adhesive layer 142 may be provided so as to overlap with the light-emitting element 190. Also, the space 143 surrounded by the substrate 152, the adhesive layer 142, and the insulating layer 214 may be filled with a resin different from the adhesive layer 142.

[0183] The light-emitting element 190 has a stacked structure in which a pixel electrode 191, a common layer 112, a light-emitting layer 193, a common layer 114, and a common electrode 115 are stacked in this order from the insulating layer 214 side. The pixel electrode 191 is connected to a conductive layer 222b of the transistor 206 through an opening provided in the insulating layer 214. The transistor 206 has a function of controlling the driving of the light-emitting element 190. The end portion of the pixel electrode 191 is covered by a partition wall 216. The pixel electrode ...... The light-emitting element 190 has a stacked structure in which a pixel electrode 191, a common layer 112, a light-emitting layer 193, a common layer 114, and a common electrode 115 are stacked in this order from the insulating layer 214 side. The pixel electrode 191 is connected to a conductive layer 222b of the transistor 206 through an opening provided in the insulating layer 214. The transistor 206 has a function of controlling the driving of the light-emitting element 190. The end portion of the pixel electrode 191 is covered by a partition wall 216. The pixel electrode ...... The light-emitting element 190 has a stacked structure in which a pixel electrode 191, a common layer 112, a light-emitting layer 193, a common layer 114, and a common electrode 115 are stacked in this order from the insulating layer 214 side. The pixel electrode 191 is connected to a conductive layer 222b of the transistor 206 through an opening provided in the insulating layer 214. The transistor 206 has a function of controlling the driving of the light-emitting element 190. The end portion of the pixel electrode 191 is covered by a partition wall 216. The pixel electrode ...... The pixel electrode 191 is connected to a conductive layer 222b of the transistor 206 through an opening provided in the insulating layer 214. The transistor 206 has a function of controlling the driving of the light-emitting element 190. The end portion of the pixel electrode 191 is covered by a partition wall 216. The pixel electrode ...... The pixel electrode 191 is connected to a conductive layer 222b of the transistor 206 through an opening provided in the insulating layer 214. The transistor 206 has a function of controlling the driving of the light-emitting element 190. The end portion of the pixel electrode 191 is covered by a partition wall 216. The pixel electrode ...... The material includes a material that reflects visible light, and the common electrode 115 includes a material that transmits visible light.

[0184] The light receiving element 110 has a stacked structure in which a pixel electrode 111, a common layer 112, an active layer 113 , a common layer 114, and a common electrode 115 are stacked in this order from the side of the insulating layer 214. The pixel electrode 11 1 is electrically connected to a conductive layer 22 2b included in the transistor 205 through an opening provided in the insulating layer 214. The end of the pixel electrode 111 is covered by the partition wall 216 . The pixel electrode 111 includes a material that reflects visible light, and the common electrode 115 includes a material that transmits visible light .

[0185] The light emitted by the light emitting element 190 is emitted toward the substrate 152 side. Further, light enters the light receiving element 110 through the substrate 152 and the space 143. It is preferable to use a material having high transmittance with respect to visible light for the substrate 152.

[0186] The pixel electrode 111 and the pixel electrode 191 can be manufactured using the same material and the same process . The common layer 112, the common layer 114, and the common electrode 115 are used for both the light receiving element 110 and the light emitting element 1 90. The light receiving element 110 and the light emitting element 190 can have the same configuration except that the configurations of the active layer 113 and the light emitting layer 193 are different. As a result, the light receiving element 110 can be incorporated into the display panel 100A without significantly increasing the manufacturing process .

[0187] A light shielding layer BM is provided on the surface of the substrate 152 on the side of the substrate 151. The light shielding layer BM has openings at positions overlapping the light receiving element 110 and positions overlapping the light emitting element 190. The light shielding layer BM By providing the shielding member, it is possible to control the range in which the light receiving element 110 detects light. By providing the optical layer BM, light from the light emitting element 190 is allowed to directly enter the light receiving element 110. Therefore, a sensor with low noise and high sensitivity can be realized.

[0188] The transistor 201, the transistor 205, and the transistor 206 are all substrate These transistors are formed on the same substrate 151 using the same material and process. It can be made.

[0189] On the substrate 151, an insulating layer 211, an insulating layer 213, an insulating layer 215, and an insulating layer 214 are formed. The insulating layer 211 is provided in this order. A part of the insulating layer 211 serves as a gate insulating layer for each transistor. The insulating layer 213 has a portion that functions as a gate insulating layer for each transistor. An insulating layer 215 is provided over the transistor. The gate insulating layer is formed to cover the gate electrode and has a function as a planarization layer. The number of insulating layers covering the transistor is not limited, and each may be a single layer or two or more layers. .

[0190] At least one insulating layer covering the transistor is designed to prevent impurities such as water and hydrogen from diffusing. It is preferable to use a material that can function as a barrier layer. This structure effectively prevents impurities from diffusing into the transistor from the outside. This can effectively suppress the noise and improve the reliability of the display device.

[0191] The insulating layer 211, the insulating layer 213, and the insulating layer 215 are each made of an inorganic insulating film. It is preferable to be present. As the inorganic insulating film, for example, a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon nitride oxide film, an aluminum oxide film, an aluminum nitride film, etc. Any inorganic insulating film can be used. Also, a hafnium oxide film, a yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, a neodymium oxide film, etc. may be used. Also, the above-mentioned insulating films may be stacked and used in two or more layers.

[0192] Here, the organic insulating film often has lower barrier properties than the inorganic insulating film. Therefore, the organic insulating film preferably has an opening near the end of the display panel 200A. Thereby it is possible to suppress the diffusion of impurities from the end of the display panel 200A through the organic insulating film. Alternatively, the organic insulating film may be formed such that the end of the organic insulating film is located inside the end of the display panel 200A, so that the organic insulating film is not exposed at the end of the display panel 200A.

[0193] An organic insulating film is suitable for the insulating layer 214 that functions as a planarization layer. Materials that can be used for the organic insulating film include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimide amide resin, siloxane resin, benzocyclobutene-based resin, phenol resin, and precursors of these resins, etc.

[0194] In the region 228 shown in FIG. 12, an opening is formed in the insulating layer 214. Thereby, even when an organic insulating film is used for the insulating layer 214, it is possible to suppress the diffusion of impurities from the outside to the display unit 162 through the insulating layer 214. Therefore, the reliability of the display panel 200A ​​​ can be enhanced.

[0195] Transistors 201, 205, and 206 have a conductive layer 221 that functions as a gate, an insulating layer 211 that functions as a gate insulating layer, conductive layers 222a and 222b that function as a source and a drain, a semiconductor layer 231, an insulating layer 213 that functions as a gate insulating layer, and a conductive layer 223 that functions as a gate. Here , a plurality of layers obtained by processing the same conductive film are given the same hatching pattern . The insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231. The insulating layer 213 is located between the conductive layer 223 and the semiconductor layer 231. . The insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231. The insulating layer 213 is located between the conductive layer 223 and the semiconductor layer 231.

[0196] The structure of the transistor included in the display panel of the present embodiment is not particularly limited. For example, a planar transistor, a staggered transistor, an inverse staggered transistor, etc. can be used . Also, either a top gate type or a bottom gate type transistor structure may be used. Alternatively, gates may be provided above and below the semiconductor layer in which the channel is formed .

[0197] In transistors 201, 205, and 206, a configuration is applied in which a semiconductor layer in which a channel is formed is sandwiched between two gates. By connecting the two gates and supplying the same signal thereto, the transistor may be driven. Or , among the two gates, a potential for controlling the threshold voltage may be applied to one, and a potential for driving may be applied to the other to control the threshold voltage of the transistor .

[0198] ​The crystallinity of the semiconductor material used for the transistor is not particularly limited, and an amorphous semiconductor, a single crystal semiconductor, or a semiconductor having crystallinity other than a single crystal (microcrystalline semiconductor, polycrystalline semiconductor or a semiconductor having a crystalline region in part) may be used. It is preferable to use a single crystal semiconductor or a semiconductor having crystallinity because deterioration of transistor characteristics can be suppressed.

[0199] The semiconductor layer of the transistor preferably has a metal oxide (also referred to as an oxide semiconductor). Alternatively, the semiconductor layer of the transistor may contain silicon. As the silicon, there may be mentioned amorphous silicon, crystalline silicon (such as low-temperature polysilicon, single crystal silicon and the like).

[0200] The semiconductor layer contains, for example, indium and one or more kinds (M) selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, lithium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium, and zinc, and preferably has them. In particular, M is preferably one or more kinds selected from aluminum, gallium, yttrium, and tin.

[0201] In particular, as the semiconductor layer, it is preferable to use an oxide containing indium (In), gallium (Ga), and zinc (Zn) (also referred to as IGZO).

[0202] When the semiconductor layer is an In-M-Zn oxide, the sputtering target used for forming the In-M-Zn oxide preferably has an atomic ratio of In equal to or more than the atomic ratio of M. Yes. As the atomic ratio of the metal elements in such a sputtering target, In:M:Zn = 1:1:1, In:M:Zn = 1:1:1.2, In:M:Zn = 2:1:3, In: M:Zn = 3:1:2, In:M:Zn = 4:2:3, In:M:Zn = 4:2:4.1 、In:M:Zn = 5:1:3, In:M:Zn = 5:1:6, In:M:Zn = 5:1 :7, In:M:Zn = 5:1:8, In:M:Zn = 6:1:6, In:M:Zn = 5 :2:5 and the like can be mentioned.

[0203] As the sputtering target, it is preferable to use a target containing polycrystalline oxide because it is easy to form a semiconductor layer having crystallinity. Note that the atomic ratio of the semiconductor layer to be formed includes a fluctuation of plus or minus 40% of the atomic ratio of the metal elements contained in the above sputtering target. For example, when the composition of the sputtering target used for the semiconductor layer is In:Ga:Zn = 4:2:4.1 [atomic ratio], the composition of the semiconductor layer to be formed may be in the vicinity of In:Ga:Zn = 4:2:3 [atomic ratio]. When the atomic ratio is described as In:Ga:Zn = 4:2:3 or in the vicinity thereof, when In is 4, it includes the case where Ga is 1 or more and 3 or less, and Zn is 2 or more and 4 or less. Also, when the atomic ratio is described as In:Ga:Zn = 5:1:6 or in the vicinity thereof, when I n is 5, it includes the case where Ga is greater than 0.1 and 2 or less, and Zn is 5 or more and 7 or less.

[0204] When the atomic ratio is described as In:Ga:Zn = 1:1:1 or in the vicinity thereof, when In is 1, it includes the case where Ga is greater than 0.1 and 2 or less, and Zn is 0. 1 and greater than 2 or less. When the atomic ratio is described as In:Ga:Zn = 5:1:6 or in the vicinity thereof, when In is 5, it includes the case where Ga is greater than 0.1 and 2 or less, and Zn is 5 or more and 7 or less. When the atomic ratio is described as In:Ga:Zn = 1:1:1 or in the vicinity thereof, when In is 1, it includes the case where Ga is greater than 0.1 and 2 or less, and Zn is 0. 1 and greater than 2 or less. 1 and greater than 2 or less.

[0205] The transistors included in circuit 164 and the transistors included in display unit 162 may have the same structure or may have different structures. The structures of the plurality of transistors included in circuit 164 may all be the same or there may be two or more types. Similarly, the structures of the plurality of transistors included in display unit 162 may all be the same or there may be two or more types. There may be, or there may be different. The structures of the plurality of transistors included in circuit 164 may all be the same or there may be two or more types. There may be, or there may be different. The structures of the plurality of transistors included in circuit 164 may all be the same or there may be two or more types. Similarly, the structures of the plurality of transistors included in display unit 162 may all be the same or there may be two or more types. There may be, or there may be different. The structures of the plurality of transistors included in circuit 164 may all be the same or there may be two or more types. Similarly, the structures of the plurality of transistors included in display unit 162 may all be the same or there may be two or more types.

[0206] A connection portion 204 is provided in a region of substrate 151 where substrate 152 does not overlap. In connection portion 204, wiring 165 is electrically connected to FPC 172 via conductive layer 166 and connection layer 242. The upper surface of connection portion 204 has conductive layer 166 exposed, which is obtained by processing the same conductive film as pixel electrode 191. Thereby, connection portion 204 and FPC 172 can be electrically connected via connection layer 242. A connection portion 204 is provided in a region of substrate 151 where substrate 152 does not overlap. In connection portion 204, wiring 165 is electrically connected to FPC 172 via conductive layer 166 and connection layer 242. A connection portion 204 is provided in a region of substrate 151 where substrate 152 does not overlap. In connection portion 204, wiring 165 is electrically connected to FPC 172 via conductive layer 166 and connection layer 242. The upper surface of connection portion 204 has conductive layer 166 exposed, which is obtained by processing the same conductive film as pixel electrode 191. A connection portion 204 is provided in a region of substrate 151 where substrate 152 does not overlap. In connection portion 204, wiring 165 is electrically connected to FPC 172 via conductive layer 166 and connection layer 242. The upper surface of connection portion 204 has conductive layer 166 exposed, which is obtained by processing the same conductive film as pixel electrode 191. Thereby, connection portion 204 and FPC 172 can be electrically connected via connection layer 242. A connection portion 204 is provided in a region of substrate 151 where substrate 152 does not overlap. In connection portion 204, wiring 165 is electrically connected to FPC 172 via conductive layer 166 and connection layer 242. The upper surface of connection portion 204 has conductive layer 166 exposed, which is obtained by processing the same conductive film as pixel electrode 191. Thereby, connection portion 204 and FPC 172 can be electrically connected via connection layer 242.

[0207] Various optical members can be arranged outside substrate 152. Examples of the optical members include a polarizing plate, a retardation plate, a light diffusion layer (such as a diffusion film), an antireflection layer, and a condensing film. Also, outside substrate 152, an antistatic film for suppressing dust adhesion, a water-repellent film for making it difficult for dirt to adhere, a hard coat film for suppressing the occurrence of scratches during use, a shock absorption layer, etc. may be arranged. Various optical members can be arranged outside substrate 152. Examples of the optical members include a polarizing plate, a retardation plate, a light diffusion layer (such as a diffusion film), an antireflection layer, and a condensing film. Various optical members can be arranged outside substrate 152. Examples of the optical members include a polarizing plate, a retardation plate, a light diffusion layer (such as a diffusion film), an antireflection layer, and a condensing film. Also, outside substrate 152, an antistatic film for suppressing dust adhesion, a water-repellent film for making it difficult for dirt to adhere, a hard coat film for suppressing the occurrence of scratches during use, a shock absorption layer, etc. may be arranged. Various optical members can be arranged outside substrate 152. Examples of the optical members include a polarizing plate, a retardation plate, a light diffusion layer (such as a diffusion film), an antireflection layer, and a condensing film. Also, outside substrate 152, an antistatic film for suppressing dust adhesion, a water-repellent film for making it difficult for dirt to adhere, a hard coat film for suppressing the occurrence of scratches during use, a shock absorption layer, etc. may be arranged. Various optical members can be arranged outside substrate 152. Examples of the optical members include a polarizing plate, a retardation plate, a light diffusion layer (such as a diffusion film), an antireflection layer, and a condensing film. Also, outside substrate 152, an antistatic film for suppressing dust adhesion, a water-repellent film for making it difficult for dirt to adhere, a hard coat film for suppressing the occurrence of scratches during use, a shock absorption layer, etc. may be arranged.

[0208] For substrate 151 and substrate 152, glass, quartz, ceramic, sapphire, resin, etc. can be used respectively. Using a flexible material for substrate 151 and substrate 152 can enhance the flexibility of the display panel. For substrate 151 and substrate 152, glass, quartz, ceramic, sapphire, resin, etc. can be used respectively. Using a flexible material for substrate 151 and substrate 152 can enhance the flexibility of the display panel. For substrate 151 and substrate 152, glass, quartz, ceramic, sapphire, resin, etc. can be used respectively. Using a flexible material for substrate 151 and substrate 152 can enhance the flexibility of the display panel.

[0209] Examples of the adhesive layer include photocurable adhesives such as ultraviolet curable adhesives, reaction curable adhesives, and thermosetting adhesives Various curable adhesives such as agents and anaerobic adhesives can be used. These adhesives include epoxy resins, acrylic resins, silicone resins, phenolic resins, polyimide resins, imi d resins, PVC (polyvinyl chloride) resins, PVB (polyvinyl butyral) resins, E VA (ethylene vinyl acetate) resins and the like. In particular, materials with low moisture permeability such as epoxy resins are preferred. Also, a two-component mixed resin may be used. Also, an adhesive sheet or the like may be used. used.

[0210] As the connection layer 242, an anisotropic conductive film (ACF: Anisotropic Co nductive Film), an anisotropic conductive paste (ACP: Anisotropic Conductive Paste) and the like can be used.

[0211] The light-emitting element 190 includes a top emission type, a bottom emission type, a dual emission tion type and the like. For the electrode on the side where light is extracted, a conductive film that transmits visible light is used. Also for the electrode on the side where light is not extracted, it is preferable to use a conductive film that reflects visible light.

[0212] The light-emitting element 190 has at least a light-emitting layer 193. The light-emitting element 190, as layers other than the light-emitting layer 193, includes a substance with high hole injection property, a substance with high hole transport property, a hole blocking material, an electric rode transport substance with high property, a substance with high electron injection property, or a bipolar substance (substance with high electron transport property and high hole transport property) and the like, and may further have a layer containing such substances. For example, the common layer 112 preferably has one or both of a hole injection layer and a hole transport layer. For example, the common layer 114 preferably has one or both of an electron transport layer and an electron injection layer. 114 preferably has one or both of an electron transport layer and an electron injection layer.

[0213] For the common layer 112, the light-emitting layer 193, and the common layer 114, either a low-molecular compound or a high-molecular compound can be used, and they may contain an inorganic compound. The layers constituting the common layer 112, the light-emitting layer 193, and the common layer 114 can be formed by methods such as vapor deposition (including vacuum vapor deposition), transfer printing, printing, inkjet printing, coating, etc. The light-emitting layer 193 may have an inorganic compound such as a quantum dot as a light-emitting material. The active layer 113 of the light-receiving element 110 contains a semiconductor. Examples of the semiconductor include inorganic semiconductors such as silicon, and organic semiconductors containing organic compounds. In this embodiment, an example of using an organic semiconductor as the semiconductor included in the active layer is shown. By using an organic semiconductor, the light-emitting layer 193 of the light-emitting element 190 and the active layer 113 of the light-receiving element 110 can be formed by the same method (for example, vacuum vapor deposition), and it is preferable because the manufacturing apparatus can be shared. Examples of the material of the n-type semiconductor included in the active layer 113 include electron-accepting organic semiconductor materials such as fullerenes (for example, C

[0214] , C

[0215] etc.) or derivatives thereof. Examples of the material of the p-type semiconductor included in the active layer 113 include electron-donating organic semiconductor materials such as copper(II) phthalocyanine (Copper(II ) phthalocyanine; CuPc), tetraphenyldibenzoperiflanthene (Tetraphenyldibenzoperiflanthene; DBP), zinc phthalocyanine (Zinc Phthalocyanine; ZnPc), etc. By using an organic semiconductor, the light-emitting layer 193 of the light-emitting element 190 and the active layer 113 of the light-receiving element 110 can be formed by the same method (for example, vacuum vapor deposition), and it is preferable because the manufacturing apparatus can be shared. For the common layer 112, the light-emitting layer 193, and the common layer 114, either a low-molecular compound or a high-molecular compound can be used, and they may contain an inorganic compound. The layers constituting the common layer 112, the light-emitting layer 193, and the common layer 114 can be formed by methods such as vapor deposition (including vacuum vapor deposition), transfer printing, printing, inkjet printing, coating, etc. The light-emitting layer 193 may have an inorganic compound such as a quantum dot as a light-emitting material.

[0216] Examples of the material of the n-type semiconductor included in the active layer 113 include electron-accepting organic semiconductor materials such as fullerenes (for example, C 60 , C 70 etc.) or derivatives thereof. Examples of the material of the p-type semiconductor included in the active layer 113 include electron-donating organic semiconductor materials such as copper(II) phthalocyanine (Copper(II ) phthalocyanine; CuPc), tetraphenyldibenzoperiflanthene (Tetraphenyldibenzoperiflanthene; DBP), zinc phthalocyanine (Zinc Phthalocyanine; ZnPc), etc. ) phthalocyanine; CuPc), tetraphenyldibenzoperiflanthene (Tetraphenyldibenzoperiflanthene; DBP), zinc phthalocyanine (Zinc Phthalocyanine; ZnPc), etc. Examples of the material of the n-type semiconductor included in the active layer 113 include electron-accepting organic semiconductor materials such as fullerenes (for example, C Examples of the material of the p-type semiconductor included in the active layer 113 include electron-donating organic semiconductor materials such as copper(II) phthalocyanine (Copper(II ) phthalocyanine; CuPc), tetraphenyldibenzoperiflanthene (Tetraphenyldibenzoperiflanthene; DBP), zinc phthalocyanine (Zinc Phthalocyanine; ZnPc), etc.

[0217] For example, it is preferable to form the active layer 113 by co-evaporating an n-type semiconductor and a p-type semiconductor. Preferably.

[0218] In addition to the gate, source, and drain of the transistor, materials that can be used for conductive layers such as various wirings and electrodes constituting the display panel include aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten, etc. metals, as well as alloys mainly composed of the metals. Films containing these materials can be used as single layers or in a laminated structure. Moreover, as the conductive material having translucency, indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide containing gallium, etc. conductive oxides or graphene can be used. Or, metal materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium, and alloy materials containing the metal materials can be used. Or, nitrides of the metal materials (for example, titanium nitride) can also be used. When using metal materials, alloy materials (or their nitrides), it is preferable to make them thin enough to have translucency. Also, laminated films of the above materials can be used as conductive layers. For example, using a laminated film of an alloy of silver and magnesium and indium tin oxide is preferable because it can enhance conductivity. These can also be used for conductive layers such as various wirings and electrodes constituting the display panel, and conductive layers (conductive layers functioning as pixel electrodes and common electrodes) of the display elements.

[0219] Moreover, as the conductive material having translucency, indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide containing gallium, etc. conductive oxides or graphene can be used. Or, metal materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium, and alloy materials containing the metal materials can be used. Or, nitrides of the metal materials (for example, titanium nitride) can also be used. When using metal materials, alloy materials (or their nitrides), it is preferable to make them thin enough to have translucency. Also, laminated films of the above materials can be used as conductive layers. For example, using a laminated film of an alloy of silver and magnesium and indium tin oxide is preferable because it can enhance conductivity. These can also be used for conductive layers such as various wirings and electrodes constituting the display panel, and conductive layers (conductive layers functioning as pixel electrodes and common electrodes) of the display elements. These can also be used for conductive layers such as various wirings and electrodes constituting the display panel, and conductive layers (conductive layers functioning as pixel electrodes and common electrodes) of the display elements. Moreover, as the conductive material having translucency, indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide containing gallium, etc. conductive oxides or graphene can be used. Or, metal materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium, and alloy materials containing the metal materials can be used. Or, nitrides of the metal materials (for example, titanium nitride) can also be used. When using metal materials, alloy materials (or their nitrides), it is preferable to make them thin enough to have translucency. Also, laminated films of the above materials can be used as conductive layers. For example, using a laminated film of an alloy of silver and magnesium and indium tin oxide is preferable because it can enhance conductivity. These can also be used for conductive layers such as various wirings and electrodes constituting the display panel, and conductive layers (conductive layers functioning as pixel electrodes and common electrodes) of the display elements. These can also be used for conductive layers such as various wirings and electrodes constituting the display panel, and conductive layers (conductive layers functioning as pixel electrodes and common electrodes) of the display elements. These can also be used for conductive layers such as various wirings and electrodes constituting the display panel, and conductive layers (conductive layers functioning as pixel electrodes and common electrodes) of the display elements. These can also be used for conductive layers such as various wirings and electrodes constituting the display panel, and conductive layers (conductive layers functioning as pixel electrodes and common electrodes) of the display elements. These can also be used for conductive layers such as various wirings and electrodes constituting the display panel, and conductive layers (conductive layers functioning as pixel electrodes and common electrodes) of the display elements.

[0220] Examples of insulating materials that can be used for each insulating layer include, for example, resins such as acrylic resin and epoxy resin, and inorganic insulating materials such as silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, and aluminum oxide. resins such as silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, and aluminum oxide. Examples of inorganic insulating materials include silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, and aluminum oxide.

[0221] [Configuration Example 3-2] FIG. 13A shows a cross-sectional view of the display panel 200B. The display panel 200B mainly differs from the display panel 200A in that it has the lens 149 and the protective layer 195. The display panel 200B mainly differs from the display panel 200A in that it has the lens 149 and the protective layer 195.

[0222] By providing the protective layer 195 that covers the light receiving element 110 and the light emitting element 190, diffusion of impurities such as water into the light receiving element 110 and the light emitting element 190 can be suppressed, and the reliability of the light receiving element 110 and the light emitting element 190 can be enhanced. By providing the protective layer 195 that covers the light receiving element 110 and the light emitting element 190, diffusion of impurities such as water into the light receiving element 110 and the light emitting element 190 can be suppressed, and the reliability of the light receiving element 110 and the light emitting element 190 can be enhanced. diffusion of impurities such as water into the light receiving element 110 and the light emitting element 190 can be suppressed, and the reliability of the light receiving element 110 and the light emitting element 190 can be enhanced.

[0223] In the region 228 near the end of the display panel 200B, it is preferable that the insulating layer 215 and the protective layer 195 are in contact with each other through the opening of the insulating layer 214. In particular, it is preferable that the inorganic insulating film of the insulating layer 215 and the inorganic insulating film of the protective layer 195 are in contact with each other. This can suppress the diffusion of impurities from the outside to the display unit 162 through the organic insulating film. Therefore, the reliability of the display panel 200B can be enhanced. In the region 228 near the end of the display panel 200B, it is preferable that the insulating layer 215 and the protective layer 195 are in contact with each other through the opening of the insulating layer 214. In particular, it is preferable that the inorganic insulating film of the insulating layer 215 and the inorganic insulating film of the protective layer 195 are in contact with each other. This can suppress the diffusion of impurities from the outside to the display unit 162 through the organic insulating film. Therefore, the reliability of the display panel 200B can be enhanced. This can suppress the diffusion of impurities from the outside to the display unit 162 through the organic insulating film. Therefore, the reliability of the display panel 200B can be enhanced. This can suppress the diffusion of impurities from the outside to the display unit 162 through the organic insulating film. Therefore, the reliability of the display panel 200B can be enhanced. This can suppress the diffusion of impurities from the outside to the display unit 162 through the organic insulating film. Therefore, the reliability of the display panel 200B can be enhanced.

[0224] FIG. 13B shows an example in which the protective layer 195 has a three-layer structure. In FIG. 13B, the protective layer 195 has an inorganic insulating layer 195a on the common electrode 115, an organic insulating layer 195b on the inorganic insulating layer 195a, and an inorganic insulating layer 195c on the organic insulating layer 195b. an organic insulating layer 195b on the inorganic insulating layer 195a, and an inorganic insulating layer 195c on the organic insulating layer 195b. The protective layer 195 has an inorganic insulating layer 195a on the common electrode 115, an organic insulating layer 195b on the inorganic insulating layer 195a, and an inorganic insulating layer 195c on the organic insulating layer 195b.

[0225] The end of the inorganic insulating layer 195a and the end of the inorganic insulating layer 195c are at the end of the organic insulating layer 195b. extends outwardly beyond them and are in contact with each other. And the inorganic insulating layer 195a is in contact with the insulating layer 215 (organic insulating layer) through an opening of the insulating layer 215 (inorganic insulating layer). Thereby, the insulating layer 215 and the protective layer 195 can surround the light receiving element 110 and the light emitting element 190 so that the reliability of the light receiving element 110 and the light emitting element 190 can be improved.

[0226] Thus, the protective layer 195 may have a laminated structure of an organic insulating film and an inorganic insulating film. At this time, it is preferable to extend the end of the inorganic insulating film outwardly beyond the end of the organic insulating film .

[0227] A lens 149 is provided on the surface of the substrate 152 on the side of the substrate 151. The lens 149 has a convex surface on the side of the substrate 151. The light receiving area of the light receiving element 110 preferably overlaps with the lens 149 and does not overlap with the light emitting layer 193. Thereby, the sensitivity and accuracy of the sensor using the light receiving element 110 can be improved.

[0228] The lens 149 preferably has a refractive index of 1.3 or more and 2 .5 or less with respect to the wavelength of the light received by the light receiving element 110. The lens 149 can be formed using at least one of an inorganic material and an organic material . For example, a material containing a resin can be used for the lens 149 . Also, a material containing at least one of an oxide and a sulfide can be used for the lens 149 .

[0229] Specifically, a resin containing chlorine, bromine, or iodine, a resin containing a heavy metal atom, a resin containing an aromatic ring , a resin containing sulfur, etc. can be used for the lens 149. Or, a material containing a resin and nanoparticles of a material having a higher refractive index than the resin can be used for the lens 149 ​​ Titanium oxide or zirconium oxide can be used as nanoparticles.

[0230] In addition, cerium oxide, hafnium oxide, lanthanum oxide, magnesium oxide, niobium oxide , tantalum oxide, titanium oxide, yttrium oxide, zinc oxide, oxides containing indium and tin , or oxides containing indium, gallium, and zinc can be used for the lens 149. Or, zinc sulfide or the like can be used for the lens 149.

[0231] In the display panel 200B, the protective layer 195 and the substrate 152 are bonded by the adhesive layer 142. The adhesive layer 142 is provided so as to overlap with the light receiving element 110 and the light emitting element 190, respectively, and a solid sealing structure is applied to the display panel 200B.

[0232] 〔Configuration Example 3-3〕 FIG. 14A shows a cross-sectional view of the display panel 200C. The display panel 200C is mainly different from the display panel 200B in that the structure of the transistor is different and that it does not have the light shielding layer BM and the lens 149.

[0233] The display panel 200C has transistors 208, 209, and 210 on the substrate 151.

[0234] The transistors 208, 209, and 210 have a semiconductor layer that functions as a gate and includes a conductive layer 221, an insulating layer 211 that functions as a gate insulating layer, a channel formation region 231i, and a pair of low-resistance regions 231n, a conductive layer 222a connected to one of the pair of low-resistance regions 231n, and a conductive layer 222 connected to the other of the pair of low-resistance regions 231n. b. It has an insulating layer 225 that functions as a gate insulating layer, a conductive layer 223 that functions as a gate, and an insulating layer 215 that covers the conductive layer 223. The insulating layer 211 is located between the conductive layer 221 and the channel formation region 231i. The insulating layer 225 is located between the conductive layer 223 and the channel formation region 231i. The conductive layers 222a and 222b are each connected to the low-resistance region 231n through openings provided in the insulating layer 225 and the insulating layer 215. One of the conductive layers 222a and 222b functions as a source, and the other functions as a drain. The pixel electrode 191 of the light-emitting element 190 is electrically connected to one of a pair of low-resistance regions 231n of the transistor 208 through the conductive layer 222b. The pixel electrode 111 of the light-receiving element 110 is electrically connected to the other of a pair of low-resistance regions 231n of the transistor 209 through the conductive layer 222b.

[0235] FIG. 14A shows an example in which the insulating layer 225 covers the upper surface and side surface of the semiconductor layer. On the other hand, in the transistor 202 shown in FIG. 14B, an example is shown in which the insulating layer 225 overlaps the channel formation region 231i of the semiconductor layer 231 and does not overlap the low-resistance region 231n. For example, the structure shown in FIG. 14B can be fabricated by processing the insulating layer 225 using the conductive layer 223 as a mask. In FIG. 14B, the insulating layer 215 is provided to cover the insulating layer 225 and the conductive layer 223, and the conductive layers 222a and 222b are each connected to the low-resistance region 231n through the opening of the insulating layer 215. Further, an insulating layer 218 that covers the transistor may be provided.

[0236]

[0237]

[0238] ​

[0239] [Constitution Example 3-4] Fig. 15 shows a cross-sectional view of the display panel 200D. The display panel 200D is mainly different from the display panel 200C in that the configuration of the substrate is different.

[0240] The display panel 200D does not have the substrates 151 and 152, but has the substrate 153, the substrate 154 , the adhesive layer 155, and the insulating layer 212.

[0241] The substrate 153 and the insulating layer 212 are bonded together by the adhesive layer 155. The substrate 154 and the protective layer 195 are bonded together by the adhesive layer 142.

[0242] The display panel 200D is formed by transferring the insulating layer 212, the transistors 208, the transistors 209, the light receiving elements 110, the light emitting elements 190, etc. formed on the production substrate onto the substrate 153 . The substrates 153 and 154 preferably have flexibility respectively. Thereby, the flexibility of the display panel 200D can be enhanced.

[0243] As the insulating layer 212, an inorganic insulating film that can be used for the insulating layer 211, the insulating layer 213, and the insulating layer 215 can be used. Alternatively, the insulating layer 212 may be a laminated film of an organic insulating film and an inorganic insulating film. At this time, it is preferable that the film on the side of the transistor 209 is an inorganic insulating film .

[0244] The above is the description of the constitution example of the display panel.

[0245] [Regarding Metal Oxides] Hereinafter, metal oxides applicable to the semiconductor layer will be described.

[0246] ​​In addition, in this specification and the like, metal oxides containing nitrogen may also be collectively referred to as metal oxides (metal ox ide). Further, metal oxides containing nitrogen may be referred to as metal oxynitrides (me tal oxynitride). For example, metal oxides containing nitrogen such as zinc oxynitride (ZnON) may be used for the semiconductor layer.

[0247] In addition, in this specification and the like, there are cases where CAAC (c-axis aligned crysta l) and CAC (Cloud-Aligned Composite) are described. CAAC represents an example of a crystal structure, and CAC represents an example of the composition of a function or material .

[0248] For example, CAC (Cloud-Aligned Composite)- OS (Oxide Semiconductor) can be used for the semiconductor layer.

[0249] CAC-OS or CAC-metal oxide has a conductive function in part of the material and an insulating function in part of the material, and has a function as a semiconductor in the whole material . When CAC-OS or CAC-metal oxide is used for the semiconductor layer of a transistor, the conductive function is the function of flowing electrons (or holes) serving as carriers , and the insulating function is the function of not flowing electrons serving as carriers. By causing the conductive function and the insulating function to act complementarily, respectively, a switching function (On / Off function) can be imparted to CAC-OS or CAC-metal oxide . In CAC-OS or CAC-metal oxide, each ​​​​By separating the functions, the functions of both sides can be maximally enhanced.

[0250] Also, CAC-OS or CAC-metal oxide has a conductive region and an insulating region. The conductive region has the above-described conductive function, and the insulating region has the above-described insulating function. Also, in the material, the conductive region and the insulating region may be separated at the nanoparticle level. Also, the conductive region and the insulating region may be unevenly distributed in the material, respectively. Also, the conductive region may be observed to be blurred at the periphery and connected in a cloud shape.

[0251] Also, in CAC-OS or CAC-metal oxide, the conductive region and the insulating region may be dispersed in the material with sizes of 0.5 nm or more and 10 nm or less, preferably 0.5 nm or more and 3 nm or less, respectively.

[0252] Also, CAC-OS or CAC-metal oxide is composed of components having different band gaps. For example, CAC-OS or CAC-metal oxide is composed of a component having a wide band gap due to the insulating region and a component having a narrow band gap due to the conductive region. In this case of the configuration, when carriers flow, carriers mainly flow in the component having a narrow band gap. Also, the component having a narrow band gap acts complementarily to the component having a wide band gap, and carriers also flow in the component having a wide band gap in conjunction with the component having a narrow band gap. Therefore, when the above CAC-OS or CAC-metal oxide is used as the channel formation region of a transistor When used, in the on-state of the transistor, a high current driving force, that is, a large on-current , and a high field-effect mobility can be obtained.

[0253] That is, CAC-OS or CAC-metal oxide can also be referred to as a matrix composite material (matrix composite), or a metal matrix composite (metal matrix composite).

[0254] Oxide semiconductors (metal oxides) can be divided into single-crystalline oxide semiconductors and other non-single-crystalline oxide semiconductors. Examples of non-single-crystalline oxide semiconductors include CAAC-OS (c- axis aligned crystalline oxide semicondu ctor), polycrystalline oxide semiconductors, nc-OS (nanocrystalline ox ide semiconductor), pseudo-amorphous oxide semiconductors (a-like OS :amorphous-like oxide semiconductor), and non- crystalline oxide semiconductors, etc.

[0255] CAAC-OS has a c-axis orientation, and a plurality of nanocrystals are connected in the a-b plane direction, resulting in a crystal structure with strain. Note that strain refers to a location where the orientation of the lattice array changes between a region where the lattice array is aligned and another region where the lattice array is aligned in the region where the plurality of nanocrystals are connected.

[0256] Nanocrystals are based on hexagons, but are not limited to regular hexagons and may be non-regular hexagons. Also, in the strain, there may be cases where the lattice array has pentagons and heptagons, etc. Oh, in CAAC-OS, it is difficult to confirm distinct grain boundaries (also called grain boundaries) even in the vicinity of strain. That is, it can be seen that the formation of grain boundaries is suppressed by the strain of the lattice arrangement. This is because CAAC-OS has a non-dense arrangement of oxygen atoms in the a-b plane direction and the interatomic bond distance changes due to the substitution of metal elements, etc., so that it can tolerate strain. (Also called grain boundaries). That is, it can be seen that the formation of grain boundaries is suppressed by the strain of the lattice arrangement. This is because CAAC-OS has a non-dense arrangement of oxygen atoms in the a-b plane direction and the interatomic bond distance changes due to the substitution of metal elements, etc., so that it can tolerate strain. That is, it can be seen that the formation of grain boundaries is suppressed by the strain of the lattice arrangement. This is because CAAC-OS has a non-dense arrangement of oxygen atoms in the a-b plane direction and the interatomic bond distance changes due to the substitution of metal elements, etc., so that it can tolerate strain. That is, it can be seen that the formation of grain boundaries is suppressed by the strain of the lattice arrangement. This is because CAAC-OS has a non-dense arrangement of oxygen atoms in the a-b plane direction and the interatomic bond distance changes due to the substitution of metal elements, etc., so that it can tolerate strain.

[0257] In addition, CAAC-OS tends to have a layered crystal structure (also called a layered structure) in which a layer containing indium and oxygen (hereinafter referred to as the In layer) and a layer containing element M, zinc, and oxygen (hereinafter referred to as the (M,Zn) layer) are laminated. Note that indium and element M are mutually substitutable. When element M in the (M,Zn) layer is substituted with indium, it can also be represented as an (In,M,Zn) layer. Also, when indium in the In layer is substituted with element M, it can also be represented as an (In,M) layer. In addition, CAAC-OS tends to have a layered crystal structure (also called a layered structure) in which a layer containing indium and oxygen (hereinafter referred to as the In layer) and a layer containing element M, zinc, and oxygen (hereinafter referred to as the (M,Zn) layer) are laminated. Note that indium and element M are mutually substitutable. When element M in the (M,Zn) layer is substituted with indium, it can also be represented as an (In,M,Zn) layer. Also, when indium in the In layer is substituted with element M, it can also be represented as an (In,M) layer. In addition, CAAC-OS tends to have a layered crystal structure (also called a layered structure) in which a layer containing indium and oxygen (hereinafter referred to as the In layer) and a layer containing element M, zinc, and oxygen (hereinafter referred to as the (M,Zn) layer) are laminated. Note that indium and element M are mutually substitutable. When element M in the (M,Zn) layer is substituted with indium, it can also be represented as an (In,M,Zn) layer. Also, when indium in the In layer is substituted with element M, it can also be represented as an (In,M) layer. In addition, CAAC-OS tends to have a layered crystal structure (also called a layered structure) in which a layer containing indium and oxygen (hereinafter referred to as the In layer) and a layer containing element M, zinc, and oxygen (hereinafter referred to as the (M,Zn) layer) are laminated. Note that indium and element M are mutually substitutable. When element M in the (M,Zn) layer is substituted with indium, it can also be represented as an (In,M,Zn) layer. Also, when indium in the In layer is substituted with element M, it can also be represented as an (In,M) layer. In addition, CAAC-OS tends to have a layered crystal structure (also called a layered structure) in which a layer containing indium and oxygen (hereinafter referred to as the In layer) and a layer containing element M, zinc, and oxygen (hereinafter referred to as the (M,Zn) layer) are laminated. Note that indium and element M are mutually substitutable. When element M in the (M,Zn) layer is substituted with indium, it can also be represented as an (In,M,Zn) layer. Also, when indium in the In layer is substituted with element M, it can also be represented as an (In,M) layer. In addition, CAAC-OS tends to have a layered crystal structure (also called a layered structure) in which a layer containing indium and oxygen (hereinafter referred to as the In layer) and a layer containing element M, zinc, and oxygen (hereinafter referred to as the (M,Zn) layer) are laminated. Note that indium and element M are mutually substitutable. When element M in the (M,Zn) layer is substituted with indium, it can also be represented as an (In,M,Zn) layer. Also, when indium in the In layer is substituted with element M, it can also be represented as an (In,M) layer.

[0258] CAAC-OS is a highly crystalline metal oxide. On the other hand, since it is difficult to confirm distinct grain boundaries in CAAC-OS, it can be said that a decrease in electron mobility due to grain boundaries is less likely to occur. Also, the crystallinity of metal oxides may decrease due to the incorporation of impurities or the generation of defects, etc. Therefore, CAAC-OS can also be said to be a metal oxide with few impurities and defects (such as oxygen vacancies (also called oxygen vacancies).). Therefore, the physical properties of the metal oxide having CAAC-OS are stable. Therefore, the metal oxide having CAAC-OS is heat-resistant and highly reliable. CAAC-OS is a highly crystalline metal oxide. On the other hand, since it is difficult to confirm distinct grain boundaries in CAAC-OS, it can be said that a decrease in electron mobility due to grain boundaries is less likely to occur. Also, the crystallinity of metal oxides may decrease due to the incorporation of impurities or the generation of defects, etc. Therefore, CAAC-OS can also be said to be a metal oxide with few impurities and defects (such as oxygen vacancies (also called oxygen vacancies).). Therefore, the physical properties of the metal oxide having CAAC-OS are stable. Therefore, the metal oxide having CAAC-OS is heat-resistant and highly reliable. CAAC-OS is a highly crystalline metal oxide. On the other hand, since it is difficult to confirm distinct grain boundaries in CAAC-OS, it can be said that a decrease in electron mobility due to grain boundaries is less likely to occur. Also, the crystallinity of metal oxides may decrease due to the incorporation of impurities or the generation of defects, etc. Therefore, CAAC-OS can also be said to be a metal oxide with few impurities and defects (such as oxygen vacancies (also called oxygen vacancies).). Therefore, the physical properties of the metal oxide having CAAC-OS are stable. Therefore, the metal oxide having CAAC-OS is heat-resistant and highly reliable. CAAC-OS is a highly crystalline metal oxide. On the other hand, since it is difficult to confirm distinct grain boundaries in CAAC-OS, it can be said that a decrease in electron mobility due to grain boundaries is less likely to occur. Also, the crystallinity of metal oxides may decrease due to the incorporation of impurities or the generation of defects, etc. Therefore, CAAC-OS can also be said to be a metal oxide with few impurities and defects (such as oxygen vacancies (also called oxygen vacancies).). Therefore, the physical properties of the metal oxide having CAAC-OS are stable. Therefore, the metal oxide having CAAC-OS is heat-resistant and highly reliable. O : oxygen vacancy CAAC-OS is a highly crystalline metal oxide. On the other hand, since it is difficult to confirm distinct grain boundaries in CAAC-OS, it can be said that a decrease in electron mobility due to grain boundaries is less likely to occur. Also, the crystallinity of metal oxides may decrease due to the incorporation of impurities or the generation of defects, etc. Therefore, CAAC-OS can also be said to be a metal oxide with few impurities and defects (such as oxygen vacancies (also called oxygen vacancies).). Therefore, the physical properties of the metal oxide having CAAC-OS are stable. Therefore, the metal oxide having CAAC-OS is heat-resistant and highly reliable. CAAC-OS is a highly crystalline metal oxide. On the other hand, since it is difficult to confirm distinct grain boundaries in CAAC-OS, it can be said that a decrease in electron mobility due to grain boundaries is less likely to occur. Also, the crystallinity of metal oxides may decrease due to the incorporation of impurities or the generation of defects, etc. Therefore, CAAC-OS can also be said to be a metal oxide with few impurities and defects (such as oxygen vacancies (also called oxygen vacancies).). Therefore, the physical properties of the metal oxide having CAAC-OS are stable. Therefore, the metal oxide having CAAC-OS is heat-resistant and highly reliable. CAAC-OS is a highly crystalline metal oxide. On the other hand, since it is difficult to confirm distinct grain boundaries in CAAC-OS, it can be said that a decrease in electron mobility due to grain boundaries is less likely to occur. Also, the crystallinity of metal oxides may decrease due to the incorporation of impurities or the generation of defects, etc. Therefore, CAAC-OS can also be said to be a metal oxide with few impurities and defects (such as oxygen vacancies (also called oxygen vacancies).). Therefore, the physical properties of the metal oxide having CAAC-OS are stable. Therefore, the metal oxide having CAAC-OS is heat-resistant and highly reliable.

[0259] nc-OS has periodicity in the atomic arrangement in a minute region (for example, a region of 1 nm or more and 10 nm or less, particularly a region of 1 nm or more and 3 nm or less). Further, nc-OS has no regularity in the crystal orientation among different nano crystals. Therefore, no orientation is observed in the entire film. Thus, depending on the analysis method, nc-OS may not be distinguishable from a-like OS or an amorphous oxide semiconductor.

[0260] Note that indium-gallium-zinc oxide (hereinafter, IGZO), which is a kind of metal oxide having indium, gallium, and zinc, may have a stable structure by using the above-described nano crystals. In particular, since IGZO tends to be difficult to grow crystals in the air, a crystal smaller than a large crystal (here, a crystal of several mm or a crystal of several cm), for example, the above-described nano crystal, may be structurally more stable.

[0261] a-like OS is a metal oxide having a structure between nc-OS and an amorphous oxide semiconductor. a-like OS has a loose or low-density region. That is, a-li ke OS has lower crystallinity than nc-OS and CAAC-OS.

[0262] Oxide semiconductors (metal oxides) have various structures and each has different characteristics. The oxide semiconductor according to one embodiment of the present invention may have two or more of an amorphous oxide semiconductor, a polycrystalline oxide semiconductor, a-li ke OS, nc-OS, and CAAC-OS.

[0263] The metal oxide film functioning as a semiconductor layer can be formed using either or both of an inert gas and an oxygen gas. Note that the flow rate of oxygen during the formation of the metal oxide film ​ There is no particular limitation on the ratio (oxygen partial pressure). However, in order to obtain a transistor with high field-effect mobility in the case, the flow rate ratio (oxygen partial pressure) of oxygen during the formation of the metal oxide film is preferably 0% or more and 30% or less, more preferably 5% or more and 30% or less, and even more preferably 7% or more and 15% or less.

[0264] The metal oxide preferably has an energy gap of 2 eV or more, more preferably 2.5 eV or more, and even more preferably 3 eV or more. Thus, by using a metal oxide with a wide energy gap, the off-current of the transistor can be reduced.

[0265] The substrate temperature during the formation of the metal oxide film is preferably 350 °C or less, more preferably room temperature or more and 200 °C or less and even more preferably room temperature or more and 130 °C or less. When the substrate temperature during the formation of the metal oxide film is room temperature, productivity can be increased, which is preferable.

[0266] The metal oxide film can be formed by a sputtering method. In addition, for example, P LD method, PECVD method, thermal CVD method, ALD method, vacuum evaporation method, etc. may also be used.

[0267] The above is the description of the metal oxide.

[0268] This embodiment can be implemented in appropriate combination with at least a part of other embodiments described in this specification.

[0269] (Embodiment 3) In this embodiment, a display panel applicable to a system according to an aspect of the present invention will be described with reference to FIGS. 1 6A and 16B.

[0270] A display panel according to one aspect of the present invention includes a first pixel circuit having a light receiving element and a second pixel circuit having a light emitting element. The first pixel circuit and the second pixel circuit are each arranged in a matrix.

[0271] FIG. 16A shows an example of the first pixel circuit having a light receiving element, and FIG. 16B shows an example of the second pixel circuit having a light emitting element.

[0272] The pixel circuit PIX1 shown in FIG. 16A includes a light receiving element PD, transistors M1, M2, M3, M4, and a capacitive element C1. Here, an example using a photodiode as the light receiving element PD is shown.

[0273] The cathode of the light receiving element PD is electrically connected to the wiring V1, and the anode is electrically connected to one of the source or drain of the transistor M1. The gate of the transistor M1 is electrically connected to the wiring TX, and the other of the source or drain is electrically connected to one electrode of the capacitive element C1, one of the source or drain of the transistor M2, and the gate of the transistor M3. The gate of the transistor M2 is electrically connected to the wiring RES, and the other of the source or drain is electrically connected to the wiring V2. One of the source or drain of the transistor M3 is electrically connected to the wiring V3, and the other of the source or drain is electrically connected to one of the source or drain of the transistor M4. The gate of the transistor M4 is electrically connected to the wiring SE, and the other of the source or drain is electrically connected to the wiring OUT1.

[0274] Constant potentials are supplied to the wirings V1, V2, and V3, respectively. The light receiving element PD​​​​​​​​​​​​​ When driving it in reverse bias, a potential lower than the potential of wiring V1 is supplied to wiring V2. Transistor M2 is controlled by the signal supplied to wiring RES, and has a function of resetting the potential of the node connected to the gate of transistor M3 to the potential supplied to wiring V2. Transistor M1 is controlled by the signal supplied to wiring TX, and has a function of controlling the timing at which the potential of the above node changes according to the current flowing through light receiving element PD. Transistor M3 functions as an amplification transistor that outputs according to the potential of the above node. Transistor M4 is controlled by the signal supplied to wiring SE, and functions as a selection transistor for reading out the output according to the potential of the above node to an external circuit connected to wiring OUT1.

[0275] The pixel circuit PIX2 shown in FIG. 16B includes a light emitting element EL, transistors M5, transistors M6, transistor M7, and a capacitor element C2. Here, an example using a light emitting diode as the light emitting element EL is shown. In particular, it is preferable to use an organic EL element as the light emitting element EL.

[0276] One of the source or drain of transistor M5 is electrically connected to wiring VS, and the other of the source or drain is electrically connected to one electrode of capacitor element C2 and the gate of transistor M6. One of the source or drain of transistor M6 is electrically connected to wiring V4, and the other is electrically connected to the anode of light emitting element EL and one of the source or drain of transistor M7. The gate of transistor M7 is electrically connected to wiring MS, and the other of the source or drain is connected to wiring OUT2. ​ is electrically connected. The cathode of the light-emitting element EL is electrically connected to the wiring V5.

[0277] A constant potential is supplied to each of the wiring V4 and the wiring V5. The anode side of the light-emitting element EL can be set to a high potential, and the cathode side can be set to a potential lower than the anode side. The transistor M 5 is controlled by a signal supplied to the wiring VG and functions as a selection transistor for controlling the selection state of the pixel circuit PIX2. Also, the transistor M6 functions as a drive transistor that controls the current flowing through the light-emitting element EL according to the potential supplied to the gate thereof. When the transistor M5 is in the conductive state, the potential supplied to the wiring VS is supplied to the gate of the transistor M6, and the emission luminance of the light-emitting element EL can be controlled according to that potential. The transistor M7 is controlled by a signal supplied to the wiring MS and has a function of outputting the potential between the transistor M6 and the light-emitting element EL to the outside via the wiring OUT2.

[0278] Note that in the display panel of the present embodiment, an image may be displayed by causing the light-emitting element to emit light in a pulse shape. By shortening the driving time of the light-emitting element, it is possible to reduce the power consumption of the display panel and suppress heat generation. In particular, an organic EL element is suitable because it has excellent frequency characteristics. The frequency can be, for example, 1 kHz or more and 100 MHz or less.

[0279] Here, the transistors M1, M2, M3, and M4 included in the pixel circuit PIX1, and the transistors M5, M6, and M7 included in the pixel circuit PIX2 each have a semiconductor layer in which a channel is formed. ​​​​​​It is preferable to apply a transistor using a metal oxide (oxide semiconductor).

[0280] A transistor using a metal oxide having a wider bandgap and a smaller carrier density than silicon can achieve an extremely small off-current. Therefore, due to its small off-current, it is possible to hold the charge accumulated in the capacitive element connected in series with the transistor for a long period of time. Therefore, in particular, for the transistors M1, M2, and M5 connected in series to the capacitive element C1 or the capacitive element C2, it is preferable to use a transistor to which an oxide semiconductor is applied. Also, by using a transistor to which an oxide semiconductor is applied for other transistors as well, the manufacturing cost can be reduced.

[0281] In addition, for transistors M1 to M7, a transistor in which silicon is applied to the semiconductor in which the channel is formed can also be used. In particular, by using highly crystalline silicon such as single-crystalline silicon or polycrystalline silicon, a high field-effect mobility can be realized, which is preferable because faster operation becomes possible.

[0282] Also, among transistors M1 to M7, a configuration in which a transistor to which an oxide semiconductor is applied is used for one or more, and a transistor to which silicon is applied is used for the rest

[0283] In FIGS. 16A and 16B, the transistors are shown as n-channel type transistors, but p-channel type transistors can also be used.

[0284] ​​​​​​​​​The transistors included in pixel circuit PIX1 and the transistors included in pixel circuit PIX2 are preferably formed side by side on the same substrate. In particular, the transistors included in pixel circuit PIX1 and the transistors included in pixel circuit PIX2 are preferably configured to be mixed and periodically arranged within one region.

[0285] Also, it is preferable to provide one or more layers having one or both of a transistor and a capacitor element at a position overlapping with the light receiving element PD or the light emitting element EL. Thereby, the effective occupied area of each pixel

[0286] circuit can be reduced, and a high-definition light receiving portion or display portion can be realized.

[0287] (Embodiment 4) In this embodiment, an electronic device which is an aspect of the composite device of an aspect of the present invention will be described with reference to FIGS. 17 to

[0288] 19. The electronic device of this embodiment includes a display device which is an aspect of the present invention. Since the display device has a function of detecting light, biometric authentication can be performed on the display portion, and touch or near-touch can be detected. The electronic device of an aspect of the present

[0289] invention is an electronic device that is difficult to be misused and has an extremely high security level. In addition, the functionality and convenience of In addition to electronic devices having a relatively large screen such as large game machines, digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, portable information terminals, audio playback devices, and the like. Digital video cameras, digital photo frames, mobile phones, portable game machines, portable information Terminals, audio playback devices, and the like can be mentioned.

[0290] The electronic device of the present embodiment may have a sensor (a device having a function of measuring force, displacement, position, velocity, acceleration, angular velocity, rotation speed, Distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, Radiation, flow rate, humidity, gradient, vibration, odor or infrared rays). It may have.

[0291] The electronic device of the present embodiment can have various functions. For example, functions such as displaying various information ( Still images, moving images, text images, etc.) on the display unit, touch panel function, calendar Function of displaying the date or time, etc., function of executing various software (programs), wireless communication function, function of reading programs or data recorded on a recording medium, etc. It can have.

[0292] The electronic device 6500 shown in FIG. 17A is a portable information Terminal that can be used as a smartphone.

[0293] The electronic device 6500 includes a housing 6501, a display unit 6502, a power button 6503, a button 6 504, a speaker 6505, a microphone 6506, a camera 6507, and a light source 6508, etc. The display unit 6502 has a touch panel function.

[0294] The display device according to one aspect of the present invention can be applied to the display unit 6502.

[0295] ​FIG. 17B is a schematic cross-sectional view including the end portion on the microphone 6506 side of the housing 6501.

[0296] A protective member 6510 having translucency is provided on the display surface side of the housing 6501, and within the space surrounded by the housing 650 1 and the protective member 6510, a display panel 6511, an optical member 6512, a touch sensor panel 6513, a printed circuit board 6517, a battery 6518, etc. are arranged.

[0297] On the protective member 6510, the display panel 6511, the optical member 6512, and the touch sensor panel 6513 are fixed by an adhesive layer (not shown).

[0298] In a region outside the display unit 6502, a part of the display panel 6511 is folded back, and an FPC 6515 is connected to the folded-back portion. To the FPC 6515, an IC 6516 is mounted. The FPC 6515 is connected to a terminal provided on the printed circuit board 6517.

[0299] A flexible display according to an aspect of the present invention can be applied to the display panel 6511. Therefore, an extremely lightweight electronic device can be realized. Also, since the display panel 6511 is extremely thin, it is possible to mount a large-capacity battery 6518 while suppressing the thickness of the electronic device. Further, by folding back a part of the display panel 6511 and arranging the connection portion with the FPC 6515 on the back side of the pixel portion, a narrow bezel electronic device can be realized.

[0300] FIG. 18A shows an example of a television device. The television device 7100 has a display unit 7000 incorporated in a housing 710 1. Here, the housing 710 is supported by a stand 7103 ​​​​​​​It shows a configuration that supports 1.

[0301] The display device according to one aspect of the present invention can be applied to the display unit 7000.

[0302] The operation of the television device 7100 shown in FIG. 18A can be performed by operation switches provided in the housing 7101 or a separate remote control operation unit 7111. Alternatively, the display unit 7000 may be provided with a touch sensor, and the television device 7100 may be operated by touching the display unit 7000 with a finger or the like. The remote control operation unit 7111 may have a display unit that displays information output from the remote control operation unit 7111. The channel and volume can be operated by operation keys or a touch panel provided in the remote control operation unit 7111, and the video displayed on the display unit 7000 can be operated.

[0303] Note that the television device 7100 has a configuration including a receiver and a modem. The receiver can receive general television broadcasts. Also, by connecting to a wired or wireless communication network via a modem, one-way (from sender to receiver) or two-way (between sender and receiver, or between receivers) information communication is possible.

[0304] FIG. 18B shows an example of a notebook personal computer. The notebook personal computer 7200 has a housing 7211, a keyboard 7212, a pointing device 7213, an external connection port 7214, etc. The display unit 7000 is incorporated in the housing 7211.

[0305] The display device according to one aspect of the present invention can be applied to the display unit 7000.​​​​​​​​​​​​​

[0306] Figures 18C and 18D show an example of digital signage.

[0307] The digital signage 7300 shown in Figure 18C includes a housing 7301, a display unit 7000, and a speaker 7303, etc. Further, it can have an LED lamp, operation keys (including a power switch or an operation switch), connection terminals, various sensors, a microphone, etc. .

[0308] Figure 18D shows a digital signage 7400 attached to a cylindrical column 7401. The digital signage 7400 has a display unit 7000 provided along the curved surface of the column 7401. has.

[0309] In Figures 18C and 18(D), the display device according to an aspect of the present invention can be applied to the display unit 7000. can be applied.

[0310] The larger the display unit 7000, the more information can be provided at one time. Also, the larger the display unit 7000, the easier it is to catch people's eyes, for example, enhancing the advertising effect. can be achieved.

[0311] By applying a touch panel to the display unit 7000, not only can an image or video be displayed on the display unit 7000, but also the user can operate it intuitively, which is preferable. Also, when used for providing information such as route information or traffic information, the usability can be enhanced more by intuitive operation. than.

[0312] Also, as shown in Figures 18C and 18D, the digital signage 7300 or the digital The digital signage 7400 is preferably capable of wireless communication and cooperation with an information terminal device 7311 such as a smartphone owned by a user or an information terminal device 7411. For example, the information of the advertisement displayed on the display unit 7000 can be displayed on the screen of the information terminal device 7311 or the information terminal device 7411. Also, by operating the information terminal device 7311 or the information terminal device 7411, the display on the display unit 7000 can be switched.

[0313] In addition, a game can be executed on the digital signage 7300 or the digital signage 7400, using the screen of the information terminal device 7311 or the information terminal device 7411 as an operation means (controller). As a result, an unspecified number of users can participate in the game simultaneously and have fun.

[0314] The electronic device shown in FIGS. 19A to 19F includes a housing 9000, a display unit 9001, a speaker 9 003, operation keys 9005 (including a power switch or an operation switch), connection terminals 90 06, a sensor 9007 (having a function of measuring force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid , magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, inclination, vibration, odor or infrared rays), a microphone 9 008, etc.

[0315] The electronic device shown in FIGS. 19A to 19F has various functions. For example, functions such as displaying various information ( still images, moving images, text images, etc.) on the display unit, a touch panel function, a calendar displaying function, a function of displaying the date or time, a function of controlling processing by various software (programs), a wireless communication function, a program or data recorded on a recording medium ​ It can have functions such as reading and processing. Note that the functions of the electronic device are not limited to these, and it can have various functions. The electronic device may have a plurality of display units. Moreover, the electronic device may be provided with a camera or the like to capture still images or moving images and store them in a recording medium (external or built into the camera), and may have functions such as displaying the captured images on the display unit.

[0316] The details of the electronic device shown in FIGS. 19A to 19F will be described below.

[0317] FIG. 19A is a perspective view showing a portable information terminal 9101. The portable information terminal 9101 can be used as, for example, a smartphone. Note that the portable information terminal 9101 may be provided with a speaker 9003, connection terminals 9006, a sensor 9007, etc. Also, the portable information terminal 9101 can display character and image information on its multiple surfaces. FIG. 19A shows an example in which three icons 9050 are displayed. Also, information 9051 indicated by a dashed rectangle can be displayed on other surfaces of the display unit 9001. Examples of the information 9051 include notifications of incoming calls such as e-mails, SNS, and phone calls, titles, sender names, dates, times, remaining battery levels, antenna reception strengths, etc. of e-mails and SNS. Or, icons 9050 etc. may be displayed at the position where the information 9051 is displayed.

[0318] FIG. 19B is a perspective view showing a portable information terminal 9102. The portable information terminal 9102 has a function of displaying information on three or more surfaces of the display unit 9001. Here, an example is shown in which information 9052, information 9053, and information 9054 are respectively displayed on different surfaces. For example, for the user In a state where the portable information terminal 9102 is stored in the breast pocket of the clothing, the information 9053 displayed at a position observable from above the portable information terminal 9102 can also be confirmed. The user can check the display without taking out the portable information terminal 9102 from the pocket and can, for example, determine whether to answer a call or not.

[0319] FIG. 19C is a perspective view showing a wristwatch-type portable information terminal 9200. Also, the display unit 90 01 is provided with a curved display surface, and display can be performed along the curved display surface . Also, the portable information terminal 9200 can communicate hands-free by mutually communicating with, for example, a wirelessly communicable headset . Also, the portable information terminal 9200 can mutually transmit data with other information terminals or perform charging by means of the connection terminal 9006. Note that the charging operation may be performed by wireless power supply.

[0320] FIGS. 19D, 19E, and 19F are perspective views showing a foldable portable information terminal 9201 . Also, FIG. 19D shows a state where the portable information terminal 9201 is unfolded, FIG. 19F shows a folded state, and FIG. 19E is a perspective view of a state in the process of changing from one of FIG. 19D and FIG. 19F to the other . The portable information terminal 9201 is excellent in portability in the folded state and excellent in display comprehensibility due to a seamless wide display area in the unfolded state. The display unit 9001 included in the portable information terminal 9201 is supported by three housings 9000 connected by a hinge 9055 . For example, the display unit 9001 can be bent with a radius of curvature of 0.1 mm or more and 150 mm or less .

[0321] This embodiment can be appropriately combined with at least some of the other embodiments described in this specification​​ They can be implemented in combination.

Description of Reference Numerals

[0322] 10, 10A: Device, 11: Control Unit, 12: Display Unit, 13: Authentication Unit, 14: Memory Unit, 21: Detection Unit, 25, 25X: Finger, 26, 26X, 27: Fingerprint Information, 30: Electronic Device, 3 1: Display Unit, 35: Icon Image, 36: Information, 40, 40A, 40B: Electronic Devices, 41 , 41A, 41B, 41C: Display Units, 42: Input Unit, 43: Input Key, 44: Housing, 45 : Housing, 46: Hinge Portion

Claims

Claim 1 A composite device having a control unit, a detection unit, an authentication unit, and a storage unit, wherein the detection unit has a function of detecting a touch operation and a function of acquiring first fingerprint information of a touched finger, the authentication unit has a function of executing user authentication processing, the storage unit has a function of holding second fingerprint information registered in advance, and the control unit has a function of shifting the system to an unlocked state when the authentication unit authenticates a user, and has a function of collating the first fingerprint information acquired by the detection unit with the second fingerprint information when the detection unit detects a touch operation, and shifting the system to a locked state when they do not match. A composite device.

Images