Through electrode substrate and semiconductor device

Abstract

To provide a through electrode substrate that facilitates formation of a conductor inside a through hole.SOLUTION: A through electrode substrate according to an embodiment of the present disclosure includes: a substrate which has a through hole that passes through from a first surface to a second surface and has a diameter that does not have a minimum value inside the hole; and a conductor that is disposed inside the through hole. The through hole satisfies the condition in which the total value of inclination angles (where angles expanding toward a side of the first surface are defined as positive inclination angles) of an inner surface with respect to the central axis of the through hole at positions at distances 6.25%, 18.75%, 31.25%, 43.75%, 56.25%, 68.75%, 81.25%, and 93.75% from the first surface among sections between the first surface and the second surface is 8.0° or more, and the inclination angles of an inner surface with respect to the central axis of the through hole at positions at distances 43.75%, 56.25% and 81.25% among sections between the first surface and the second surface become smaller in order.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present disclosure relates to a through-electrode substrate.

Background Art

[0002] In recent years, a three-dimensional mounting technology in which semiconductor circuit substrates on which integrated circuits are formed are vertically stacked has been used. In such a mounting technology, a substrate on which through electrodes are formed is used. Such a substrate is sometimes referred to as an interposer. The through electrodes are formed by disposing a conductor in through holes formed in the substrate. For high integration, miniaturization of the through holes is necessary. For example, Patent Documents 1 and 2 disclose a technique of irradiating a glass substrate with a laser in order to form fine through holes.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0004] According to the techniques disclosed in Patent Documents 1 and 2 above, while the through holes can be miniaturized, the aspect ratio increases. When the aspect ratio increases, it becomes difficult to form a conductor inside the through holes.

[0005] An object of an embodiment of the present disclosure is to easily form a conductor inside a through hole.

Means for Solving the Problems

[0006] According to an embodiment of the present disclosure, a substrate including a through hole having no minimum diameter inside the through hole from a first surface to a second surface, and a conductor formed in the through hole are provided. The through hole satisfies the condition that the total value of the inclination angles of the inner surface with respect to the central axis of the through hole at positions of 6.25%, 18.75%, 31.25%, 43.75%, 56.25%, 68.75%, 81.25%, and 93.75% of the distance from the first surface in the section from the first surface to the second surface (the angle at which the first surface side expands is defined as a positive inclination angle) is 8.0° or more, and the inclination angles of the inner surface with respect to the central axis of the through hole at positions of 43.75%, 56.25%, and 81.25% of the distance in the section from the first surface to the second surface decrease in order. A through electrode substrate is provided.

[0007] According to an embodiment of the present disclosure, a substrate including a through hole having a minimum diameter inside the through hole from a first surface to a second surface, and a conductor formed in the through hole are provided. The through hole satisfies the condition that the total value of the inclination angles of the inner surface with respect to the central axis of the through hole at positions of 6.25%, 18.75%, 31.25%, and 43.75% of the distance from the first surface in the section from the first surface to the second surface (the angle at which the first surface side expands is defined as a positive inclination angle) is 4.0° or more, and the total value of the inclination angles of the inner surface with respect to the central axis of the through hole at positions of 56.25%, 68.75%, 81.25%, and 93.75% of the distance from the first surface is -4.0° or less, and the inclination angles of the inner surface with respect to the central axis of the through hole at positions of 18.75%, 43.75%, 56.25%, and 81.25% of the distance from the first surface in the section from the first surface to the second surface decrease in order. A through electrode substrate is provided.

[0008] The conductor includes a first metal layer and a second metal layer. The first metal layer is disposed between the second metal layer and the substrate, and at least a part of the first metal layer may be disposed on both the first surface and the second surface.

[0009] At least a part of the first metal layer disposed on the first surface and the second surface may be connected to the first metal layer disposed inside the through hole.

[0010] The substrate may be a glass substrate.

[0011] The conductor may include a first metal layer disposed on the substrate and a second metal layer disposed on the first metal layer.

[0012] The aspect ratio of the through hole may be 4 or more.

[0013] According to an embodiment of the present disclosure, there is provided a semiconductor device including the through electrode substrate described above and a semiconductor circuit substrate electrically connected to the conductor of the through electrode substrate.

Advantages of the Invention

[0014] According to an embodiment of the present disclosure, a conductor can be easily formed inside a through hole.

Brief Description of the Drawings

[0015]

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Embodiments for Carrying Out the Invention

[0016] Hereinafter, the through - electrode substrate according to each embodiment of the present disclosure will be described in detail with reference to the drawings. Note that each of the embodiments shown below is an example of an embodiment of the present invention, and the present invention is not construed as being limited to these embodiments. In the drawings referred to in this embodiment, the same parts or parts having the same or similar functions are denoted by the same reference numerals or similar reference numerals (reference numerals with A, B, etc. added after the numbers), and repeated explanations may be omitted. Also, the dimensional ratios in the drawings may be different from the actual ratios for convenience of explanation, or a part of the configuration may be omitted from the drawings.

[0017] <First Embodiment> [Configuration of Through - Electrode Substrate] FIG. 1 is a diagram for explaining a cross - sectional structure of a through - electrode substrate according to the first embodiment of the present disclosure. The through - electrode substrate 10 includes a glass substrate 100 and wiring layers 210 and 220. The wiring layer 210 is disposed on the first surface 101 side of the glass substrate 100. The wiring layer 220 is disposed on the second surface 102 side of the glass substrate 100. The glass substrate 100 includes a through - hole 150 that penetrates from the first surface 101 to the second surface 102. The through - electrode 50 is a conductor disposed inside the through - hole 150, on a part of the first surface 101 side of the glass substrate 100, and on a part of the second surface 102 side of the glass substrate 100. The through - electrode 50 electrically connects the first surface 101 side and the second surface 102 side of the glass substrate 100. The wiring layer 210 includes a conductive layer 212 and an insulating layer 215. The wiring layer 220 includes a conductive layer 222 and an insulating layer 225. The conductive layer 212 and the conductive layer 222 are electrically connected via the through - electrode 50. Note that at least one or both of the wiring layer 210 and the wiring layer 220 may not exist.

[0018] In FIG. 1, the shape of the through - hole 150 is shown as a cylindrical shape, but actually, the inner surface of the through - hole 150 has a complex shape. The same applies to the descriptions of FIGS. 2 to 8. Note that specific shapes of the through - hole 150 are exemplified by the shapes shown in FIGS. 9, 10, 22, 23, and 24, which will be described later.

[0019] [Manufacturing Method of Through - Electrode Substrate] Next, a method for manufacturing the through - electrode substrate 10 will be described with reference to FIGS. 2 to 8. First, a process of forming a through - hole 150 in the glass substrate 100 will be described.

[0020] FIG. 2 is a diagram for explaining a method for manufacturing a through - electrode substrate according to the first embodiment of the present disclosure. FIG. 3 is a diagram for explaining a method for manufacturing a through - electrode substrate (formation of a through - hole) following FIG. 2. First, a glass substrate 100 is prepared (FIG. 2). The thickness of the glass substrate 100 is 400 μm in this example. Instead of the glass substrate 100, a substrate formed of other inorganic materials such as a quartz substrate, a silicon wafer, or a ceramic may be used, or a substrate formed of an organic material such as a resin substrate may be used. When a conductive substrate such as a silicon wafer is used, in a state where a through - hole is formed, the surface of the substrate including the inner surface of the through - hole is covered with an insulator so that the through - electrode and the substrate are not electrically connected.

[0021] Subsequently, a through - hole 150 is formed in the glass substrate 100 (FIG. 3). The through - hole 150 is formed such that the inner surface has any one of the shapes shown in FIGS. 9, 10, 20, 21, and 22 as described above. In this example, the shape of the through - hole 150 satisfies either of the following first condition and second condition.

[0022] (First condition) The first condition is the conditions shown in (1) and (2) below. (1) Inside the through - hole 150, the diameter Sd does not have a minimum value. (2) The sum of the inclination angles of a plurality of measurement points on the inner surface of the through - hole 150 is 8.0° or more. Here, the plurality of measurement points are positions at distances of 6.25%, 18.75%, 31.25%, 43.75%, 56.25%, 68.75%, 81.25%, and 93.75% from the first surface 101 in the section from the first surface 101 to the second surface 102 (a total of 8 points).

[0023] (Second condition) The second condition is the conditions shown in (3), (4), and (5) below. (3) The diameter Sd has a minimum value inside the through hole 150. (4) The first total value of the inclination angles of a plurality of first measurement points on the inner surface of the through hole 150 is 4.0° or more. (5) The second total value of the inclination angles of a plurality of second measurement points on the inner surface of the through hole 150 is -4.0° or less. Here, the plurality of first measurement points are the positions at 6.25%, 18.75%, 31.25%, and 43.75% of the distance from the first surface 101 in the section from the first surface 101 to the second surface 102 (a total of 4 points). The plurality of second measurement points are the positions at 56.25%, 68.75%, 81.25%, and 93.75% of the distance from the first surface 101 in the section from the first surface 101 to the second surface 102 (a total of 4 points).

[0024] The definitions of the above terms will be described. The inside of the through hole 150 indicates the space between the first surface 101 and the second surface 102 of the glass substrate 100 in the through hole 150. The diameter Sd of the through hole 150 indicates the distance from the central axis to the inner surface in the cross-sectional shape perpendicular to the central axis of the through hole 150. The diameter Sd changes according to the position of the cross-section perpendicular to the central axis. In this example, the cross-sectional shape is a circle. Therefore, the diameter Sd corresponds to the radius. Also, the central axis is located at the center of the circle. Further, in this example, the central axis of the through hole 150 is perpendicular to the first surface 101 and the second surface 102. The inclination angle is the inclination angle of the inner surface with respect to the central axis of the through hole 150. The inclination angle at which the first surface 101 side expands is set as a positive value.

[0025] The through-hole 150 that satisfies the first condition is formed by irradiating the glass substrate 100 with a laser under predetermined conditions. The through-hole 150 that satisfies the second condition is formed by performing an etching process on the glass substrate 100 with a predetermined etching solution after irradiating the glass substrate 100 with a laser under predetermined conditions. The maximum value of the diameter Sd is about 35 μm to 45 μm. As described above, the thickness of the glass substrate 100 is 400 μm. Therefore, the aspect ratio (the ratio of the length of the through-hole 150 (the thickness of the glass substrate 100) to the diameter of the through-hole 150 (the maximum value of the diameter Sd × 2)) is about 5. It is desirable that the above-described first condition or second condition be applied when the through-hole 150 has an aspect ratio of 4 or more. For the through-hole 150 that satisfies any condition, the detailed processing conditions will be described in each of the following embodiments.

[0026] Subsequently, the process of forming the through electrode 50 in the through-hole 150 will be described.

[0027] FIG. 4 is a diagram for explaining a method of manufacturing a through electrode substrate (formation of a first metal layer) following FIG. 3. FIG. 5 is a diagram for explaining a method of manufacturing a through electrode substrate (formation of a first metal layer) following FIG. 4. FIG. 6 is a diagram for explaining a method of manufacturing a through electrode substrate (formation of a second metal layer) following FIG. 5. FIG. 7 is a diagram for explaining a method of manufacturing a through electrode substrate (formation of a through electrode) following FIG. 6.

[0028] A first metal layer 51 is formed on the glass substrate 100 in which the through-hole 150 is formed. The first metal layer 51 has a function as a seed layer for an electrolytic plating process. The first metal layer 51 is Ti. Note that the first metal layer 51 may be any metal that functions as a seed layer for an electrolytic plating process, and may be, for example, a metal containing Cu, Ni, Cr, Ti, W, or the like.

[0029] First, the first metal layer 51 is formed by sputtering from the first surface 101 side of the glass substrate 100 (FIG. 4). In this example, while rotating the glass substrate 100, the first metal layer 51 is deposited by sputtering from the first surface 101 side. The rotation axis of the glass substrate 100 is inclined with respect to the normal of the first surface 101. The inclination angle of the rotation axis is desirably 0° or more and 20° or less, and is 10° in this example. Note that the normal of the surface of the target used for sputtering is parallel to this rotation axis.

[0030] At this point, the first metal layer 51 is formed on the first surface 101 side but not on the second surface 102 side. Also, the first metal layer 51 is formed on a part of the inner surface of the through hole 150 on the first surface 101 side but not on a part of the second surface 102 side. Therefore, the first metal layer 51 is deposited by sputtering from the second surface 102 side of the glass substrate 100 (FIG. 5). By this process, the surface of the glass substrate 100 is covered with the first metal layer 51. On the first surface 101 (and the second surface 102), the first metal layer 51 is desirably deposited to have a thickness of 0.1 μm or more and 3 μm or less, and is deposited with a thickness of 1.5 μm in this example. The first metal layer 51 deposited on the inner surface of the through hole 150 is thinner than the first metal layer 51 deposited on the first surface 101.

[0031] Subsequently, using the first metal layer 51 as a seed layer, the second metal layer 52 is grown by electrolytic plating. Before the electrolytic plating process, a mask is formed of an insulator such as a resist in the region where the second metal layer 52 is not to be grown, and the mask is removed after the second metal layer 52 is grown (FIG. 6). In this way, since the second metal layer 52 does not grow in the portion where the mask is formed, the first metal layer 51 is exposed in the region where the mask is removed.

[0032] The second metal layer 52 is Cu. Note that the second metal layer 52 may be a metal including Au, Ag, Pt, Al, Ni, Cr, Sn, etc. In this example, the second metal layer 52 is formed to have a film thickness such that it does not fill the inside of the through hole 150. Regarding the space in the through hole 150 formed by not being filled, a gas may be present, or it may be filled with an insulator such as resin, or it may be filled with a conductor such as another metal. Note that the second metal layer 52 may be formed to have a film thickness such that it fills the inside of the through hole 150.

[0033] Subsequently, with the second metal layer 52 as a mask, the exposed first metal layer 51 is etched, and a through electrode 50 is formed (FIG. 7). Note that the through electrode 50 has a laminated structure of the first metal layer 51 and the second metal layer 52, but in each figure, this laminated structure is collectively described without distinction.

[0034] As the aspect ratio of the through hole 150 increases, there may be a case where the first metal layer 51 is not formed on a part of the inner surface of the through hole 150. If there is a region where the first metal layer 51 is not formed, a region where the second metal layer 52 is not formed occurs in the electrolytic plating process in the next step. As a result, a defect occurs in that conduction between the first surface 101 side and the second surface 102 side cannot be achieved.

[0035] On the other hand, since the shape of the through hole 150 satisfies the first condition or the second condition described above, the first metal layer 51 is formed over substantially the entire inner surface of the through hole 150. Thereby, since it becomes difficult for the second metal layer 52 to be separated inside the through hole 150, a through electrode 50 that realizes conduction between the first surface 101 side and the second surface 102 side can be formed.

[0036] FIG. 8 is a diagram for explaining a method of manufacturing a through-electrode substrate (formation of wiring layers) following FIG. 7. When the through-electrode 50 is formed on the glass substrate 100, subsequently, the wiring layer 210 is formed on the first surface 101 side of the glass substrate 100. The wiring layer 210 is realized, for example, by forming an insulating layer 215 having contact holes and then forming a conductive layer 212. The insulating layer 215 is formed, for example, by a photosensitive dry film resist. A dry film resist is formed on the glass substrate 100, exposed in a predetermined pattern, and developed to form contact holes. The conductive layer 212 may be formed using an electrolytic plating process, similar to the through-electrode 50 described above, or may be formed by vapor deposition using a sputtering method or the like. By repeatedly forming the insulating layer 215 and the conductive layer 212, a wiring layer 210 having a multilayer structure is formed.

[0037] Subsequently, when the wiring layer 220 is formed on the second surface 102 side of the glass substrate 100, the structure shown in FIG. 1 is realized. The above is the explanation of the method of manufacturing the through-electrode substrate 10.

[0038] <Example> [Shape of through-hole (without minimum value of diameter Sd)] The shape of the through-hole 150 and the manufacturing method for realizing this shape will be described. First, the shape in which the diameter Sd has no minimum value inside the through-hole 150 will be described. Here, the first example (shape A) and the second example (shape B) will be described.

[0039] FIG. 9 is a diagram for explaining an example of the shape of the through hole (Shape A) in the first embodiment of the present disclosure. The diameter Sd of the through hole 150A shown in FIG. 9 is the largest on the first surface 101 side, decreases as it goes toward the second surface 102 side, and is the smallest on the second surface 102 side. In FIG. 9, the central axis CA of the through hole 150A corresponds to the center of the circle that appears when the through hole 150A is cut by a plane parallel to the first surface 101. Therefore, the distance from the central axis CA to the inner surface of the through hole 150A (the radius of the circle) corresponds to the diameter Sd. The inclination angle TA is the angle of the inner surface with respect to the central axis CA. In FIG. 9, the angle between the inclination SS of the inner surface at 175 μm (43.75%) from the first surface 101 and the central axis CA is illustrated as the inclination angle TA.

[0040] FIG. 10 is a diagram for explaining an example of the shape of the through hole (Shape B) in the second embodiment of the present disclosure. The diameter Sd of the through hole 150B shown in FIG. 10 is smaller on the second surface 102 side than on the first surface 101 side, and increases once and then decreases as it goes from the first surface 101 side to the second surface 102 side. That is, inside the through hole, the diameter Sd has a maximum value. The position where the diameter Sd becomes the maximum value exists on the first surface 101 side rather than at the central position between the first surface 101 and the second surface 102.

[0041] The through holes of Shape A and Shape B were fabricated using the apparatus for irradiating a laser disclosed in Patent Document 1 (International Publication No. WO2010 / 087483) described above. The irradiation of the excimer laser light was adjusted for the irradiation fluence on the processing surface of the glass substrate 100 every 50 μm. By adjusting the irradiation fluence in this way, the shape of the formed through hole was controlled.

[0042] [First Embodiment and First Comparative Example] Regarding various shapes of the through-hole 150A on the premise of Shape A, the influence on the formation of the first metal layer 51 was evaluated. Here, through-holes of Shapes A1 to A3 were formed as the first embodiment. Further, through-holes of Shapes A4 and A5 were formed as the first comparative example. The relationship between the depth Fd and the irradiation fluence (and the number of shots) for each shape is as shown in Table 1 below. Note that the depth Fd corresponds to the distance from the first surface 101. Therefore, a depth Fd = 0 μm corresponds to the first surface 101, and a depth Fd = 400 μm corresponds to the second surface 102.

[0043]

Table 1

[0044] FIG. 11 is a diagram for explaining the shape characteristics of the through-hole in the first embodiment (Shape A1) of the present disclosure. FIG. 12 is a diagram for explaining the shape characteristics of the through-hole in the first embodiment (Shape A2) of the present disclosure. FIG. 13 is a diagram for explaining the shape characteristics of the through-hole in the first embodiment (Shape A3) of the present disclosure. FIG. 14 is a diagram for explaining the shape characteristics of the through-hole in the first comparative example (Shape A4) of the present disclosure. FIG. 15 is a diagram for explaining the shape characteristics of the through-hole in the first comparative example (Shape A5) of the present disclosure. The shape characteristics of the through-holes shown in FIGS. 11 to 15 are the relationships between the depth Fd and the diameter Sd, and between the depth Fd and the inclination angle TA. Note that the measurement positions of the inclination angle TA are at positions of distances of 6.25% (25 μm), 18.75% (75 μm), 31.25% (125 μm), 43.75% (175 μm), 56.25% (225 μm), 68.75% (275 μm), 81.25% (325 μm), and 93.75% (375 μm) from the first surface 101 in the section from the first surface 101 to the second surface 102 (a total of 8 points).

[0045] In the through-holes 150A having the shapes A1 to A5, the through electrodes 50 were formed by the method described in the above first embodiment. The cross-sections of the through electrodes 50 of each shape were observed, and it was evaluated whether or not the first metal layer 51 was formed over the entire inner surface of the through-hole 150A. If there was no region where the first metal layer 51 was not formed, it was judged as good (OK), and if there was a region where the first metal layer 51 was not formed, it was judged as defective (NG). Since the first metal layer 51 is very thin, the second metal layer 52 was formed by electrolytic plating, and by observing the state of the second metal layer 52, it was indirectly evaluated whether or not the first metal layer 51 was formed.

[0046] As a result, it was determined that the shapes A1, A2, and A3 were good, and the shapes A4 and A5 were defective.

[0047] [Second Embodiment and Second Comparative Example] Regarding various shapes of the through-hole 150B based on the shape B, the influence on the formation of the first metal layer 51 was evaluated. Here, through-holes having the shapes B1 and B2 were formed as the second embodiment. Further, through-holes having the shapes B3 and B4 were formed as the second comparative example. The relationship between the depth Fd and the irradiation fluence (and the number of shots) for each shape is as shown in Table 2 below.

[0048] [Table 2]

[0049] FIG. 16 is a diagram for explaining the shape characteristics of the through-hole in the second embodiment (shape B1) of the present disclosure. FIG. 17 is a diagram for explaining the shape characteristics of the through-hole in the second embodiment (shape B2) of the present disclosure. FIG. 18 is a diagram for explaining the shape characteristics of the through-hole in the second comparative example (shape B3) of the present disclosure. FIG. 19 is a diagram for explaining the shape characteristics of the through-hole in the second comparative example (shape B4) of the present disclosure. The shape characteristics of the through-holes shown in FIGS. 16 to 19 are the relationships between the depth Fd and the diameter Sd, and between the depth Fd and the inclination angle TA. The evaluation method was the same as described above, and it was evaluated whether or not the first metal layer 51 was formed over the entire inner surface of the through-hole 150B.

[0050] As a result, it was determined that the shapes B1 and B2 were good, and the shapes B3 and B4 were defective.

[0051] [Relationship between evaluation results and inclination angle (without minimum value of diameter Sd)] From the evaluation results of the above-described first embodiment, first comparative example, second embodiment, and second comparative example, it was found that a good evaluation result can be obtained when the total value TSA of the inclination angles TA satisfies a predetermined condition. The total inclination angle value TSA is a value obtained by summing the eight inclination angles TA. The relationship between the total inclination angle value TSA for each shape and the evaluation result is shown in Table 3 below.

[0052] [Table 3]

[0053] As shown in Table 3, when the total inclination angle value TSA at the eight measurement points is 8° or more, the evaluation result is good. This indicates that the through hole 150 described above has a shape that satisfies the "first condition".

[0054] [Shape of through hole (with minimum value of diameter Sd)] A shape in which the diameter Sd has a minimum value inside the through hole 150 will be described. Here, the third embodiment (shape C), the fourth embodiment (shape D), and the fifth embodiment (shape E) will be described.

[0055] FIG. 20 is a diagram for explaining a shape example (shape C) of a through hole in the third embodiment of the present disclosure. The diameter Sd of the through hole 150C shown in FIG. 20 is the largest on the first surface 101 side and the second surface 102 side, and has a minimum value near the center inside the through hole. The vicinity of the center is a position where the depth Fd is between 43.75% (175 μm) and 56.25% (225 μm), and is approximately at the 50% (200 μm) position.

[0056] FIG. 21 is a diagram for explaining an example of the shape of the through-hole (Shape D) in the fourth embodiment of the present disclosure. The diameter Sd of the through-hole 150D shown in FIG. 21 has a minimum value near the center inside the through-hole, and has a maximum value at an intermediate position between the first surface 101 and the vicinity of the center and at an intermediate position between the second surface 102 and the vicinity of the center.

[0057] FIG. 22 is a diagram for explaining an example of the shape of the through-hole (Shape E) in the fifth embodiment of the present disclosure. The diameter Sd of the through-hole 150E shown in FIG. 22 has a maximum value on the first surface 101 side and the second surface 102 side, and has a minimum value at an intermediate position between the first surface 101 and the vicinity of the center and at an intermediate position between the second surface 102 and the vicinity of the center. Note that, except for the diameter Sd at the first surface 101 and the diameter Sd at the second surface 102, the diameter Sd has a maximum value near the center.

[0058] The through-holes of Shape C, Shape D, and Shape E were fabricated using the apparatus for irradiating a laser and the etching apparatus disclosed in Patent Document 2 (Japanese Patent Application Laid-Open No. 2014-501686) described above. Specifically, a damage region is formed inside the glass substrate 100 by irradiating a UV laser beam using the Nd:KGW laser apparatus described in the above document. At this time, the laser beam irradiation from the first surface 101 side of the glass substrate 100 and the laser beam irradiation from the second surface 102 side were performed in order. The conditions are the same for the laser beam irradiation from either surface side.

[0059] After the laser beam irradiation on both surfaces was completed, an etching treatment was performed for 10 minutes in an ultrasonic bath using an etching solution (aqueous solution of HF (20% by volume) + HNO3 (10% by volume)) at 35° C., thereby dissolving the damage region of the glass substrate 100.

[0060] Among the above processes, by adjusting the irradiation conditions of the laser beam, the shape of the damaged region formed on the glass substrate 100 was adjusted. When the shape of the damaged region changes, the shape of the through hole also changes accordingly. The irradiation conditions are the entrance aperture diameter (aperture diameter on the surface of the glass substrate 100), the intermediate aperture diameter (aperture diameter near the center of the glass substrate 100 (200 μm from the surface)), and the irradiation time. The entrance aperture diameter and the intermediate aperture diameter are adjusted by changing the lens NA and the focal position.

[0061] [Third Embodiment and Third Comparative Example] Regarding various shapes of the through hole 150C based on Shape C, the influence on the formation of the first metal layer 51 was evaluated. Here, through holes of Shapes C1, C2, and C3 were formed as the third embodiment. Also, a through hole of Shape C4 was formed as the third comparative example. The irradiation conditions for each shape are as shown in Table 4 below.

[0062] [Table 4]

[0063] FIG. 23 is a diagram for explaining the shape characteristics of the through hole in the third embodiment (Shape C1) of the present disclosure. FIG. 24 is a diagram for explaining the shape characteristics of the through hole in the third embodiment (Shape C2) of the present disclosure. FIG. 25 is a diagram for explaining the shape characteristics of the through hole in the third embodiment (Shape C3) of the present disclosure. FIG. 26 is a diagram for explaining the shape characteristics of the through hole in the third comparative example (Shape C4) of the present disclosure. The shape characteristics of the through holes shown in FIGS. 23 to 26 are the relationships between the depth Fd and the diameter Sd, and between the depth Fd and the inclination angle TA. The evaluation method was to evaluate whether the first metal layer 51 was formed on the entire inner surface of the through hole 150C in the same manner as described above.

[0064] As a result, it was determined that Shapes C1, C2, and C3 were good, and Shape C4 was bad.

[0065] [Fourth Embodiment and Fourth Comparative Example] Regarding various shapes of the through-hole 150D based on the shape D, the influence on the formation of the first metal layer 51 was evaluated. Here, through-holes with shapes D1 and D2 were formed as the fourth embodiment. Further, through-holes with shapes D3 and D4 were formed as the fourth comparative example. The irradiation conditions for each shape are as shown in Table 5 below.

[0066]

Table 5

[0067] FIG. 27 is a diagram for explaining the shape characteristics of the through-hole in the fourth embodiment (shape D1) of the present disclosure. FIG. 28 is a diagram for explaining the shape characteristics of the through-hole in the fourth embodiment (shape D2) of the present disclosure. FIG. 29 is a diagram for explaining the shape characteristics of the through-hole in the fourth comparative example (shape D3) of the present disclosure. FIG. 30 is a diagram for explaining the shape characteristics of the through-hole in the fourth comparative example (shape D4) of the present disclosure. The shape characteristics of the through-holes shown in FIGS. 27 to 30 are the relationships between the depth Fd and the diameter Sd, and between the depth Fd and the inclination angle TA. The evaluation method was to evaluate whether the first metal layer 51 was formed on the entire inner surface of the through-hole 150D in the same manner as described above.

[0068] As a result, it was determined that shapes D1 and D2 were good, and shapes D3 and D4 were bad.

[0069] [Fifth Embodiment] Regarding various shapes of the through-hole 150E based on the shape E, the influence on the formation of the first metal layer 51 was evaluated. Here, a through-hole with shape E1 was formed as the E embodiment. The irradiation conditions for this shape are as shown in Table 6 below.

[0070]

Table 6

[0071] FIG. 31 is a diagram for explaining the shape characteristics of the through hole in the fifth embodiment (shape E1) of the present disclosure. The shape characteristics of the through hole shown in FIG. 31 are the relationship between the depth Fd and the diameter Sd, and the relationship between the depth Fd and the inclination angle TA. The evaluation method was the same as described above, and it was evaluated whether the first metal layer 51 was formed on the entire inner surface of the through hole 150E.

[0072] As a result, the shape E1 was determined to be good.

[0073] [Relationship between evaluation result and inclination angle (with minimum value of diameter Sd)] From the evaluation results of the above-described third embodiment, third comparative example, fourth embodiment, fourth comparative example, and fifth embodiment, it was found that a good evaluation result can be obtained when the total value TSA of the inclination angle TA satisfies a predetermined condition. The total inclination angle value TSA is the value obtained by summing the four inclination angles TA. The relationship between the total inclination angle value TSA for each shape and the evaluation result is shown in Table 7 below. The measurement positions of the inclination angle TA are four points at positions of distances of 6.25% (25 μm), 18.75% (75 μm), 31.25% (125 μm), and 43.75% (175 μm) from the first surface 101 in the section from the first surface 101 to the second surface 102.

[0074] Note that for the through holes of shapes C, D, and E, the first surface 101 side and the second surface 102 side are symmetric with respect to the center (50%, 200 μm) of the through hole. Therefore, when the measurement positions of the inclination angle TA are four points at positions of distances of 56.25% (225 μm), 68.75% (275 μm), 81.25% (325 μm), and 93.75% (375 μm) from the first surface 101 in the section from the first surface 101 to the second surface 102, the total inclination angle value TSA becomes a value with the positive and negative reversed.

[0075]

Table 7

[0076] As shown in Table 6, when the total tilt angle value TSA at four measurement points (positions at distances of 6.25% (25 μm), 18.75% (75 μm), 31.25% (125 μm), and 43.75% (175 μm) from the first surface 101 in the interval from the first surface 101 to the second surface 102) is 4° or more, the evaluation result is good. At this time, as a result, when the total tilt angle value TSA at four measurement points (positions at distances of 56.25% (225 μm), 68.75% (275 μm), 81.25% (325 μm), and 93.75% (375 μm) from the first surface 101 in the interval from the first surface 101 to the second surface 102) is -4° or less, the evaluation result is good. This indicates that the through hole 150 described above has a shape that satisfies the "second condition".

[0077] <Second Embodiment> In the second embodiment, a semiconductor device manufactured using the through - electrode substrate 10 in the first embodiment will be described.

[0078] FIG. 32 is a diagram showing a semiconductor device according to the second embodiment of the present invention. The semiconductor device 1000 has three stacked through - electrode substrates 10 (10 - 1, 10 - 2, 10 - 3) and is connected to the LSI substrate 70. The through - electrode substrate 10 - 1 has, for example, semiconductor elements such as DRAM, and also has connection terminals 81 - 1, 82 - 1 formed of conductive layers 212, 222, etc. These through - electrode substrates 10 (10 - 1, 10 - 2, 10 - 3) do not have to be made of the glass substrate 100, and some of the through - electrode substrates 10 may be made of substrates of materials different from those of other through - electrode substrates 10. The connection terminal 81 - 1 is connected to the connection terminal 80 of the LSI substrate 70 via a bump 90 - 1. The connection terminal 82 - 1 is connected to the connection terminal 81 - 2 of the through - electrode substrate 10 - 2 via a bump 90 - 2. The connection terminal 82 - 2 of the through - electrode substrate 10 - 2 and the connection terminal 83 - 1 of the through - electrode substrate 10 - 3 are also connected via a bump 90 - 3. The bumps 90 (90 - 1, 90 - 2, 90 - 3) are made of, for example, metals such as indium, copper, and gold.

[0079] In the case of laminating the through - electrode substrate 10, it is not limited to three layers, and it may be two layers or even four or more layers. Also, the connection between the through - electrode substrate 10 and another substrate is not limited to being by bumps, and other bonding techniques such as eutectic bonding may be used. Further, polyimide, epoxy resin, etc. may be applied and fired so that the through - electrode substrate 10 and another substrate are adhered.

[0080] FIG. 33 is a diagram showing another example of a semiconductor device according to the second embodiment of the present invention. The semiconductor device 1000 shown in FIG. 33 has a laminated structure in which semiconductor circuit boards (semiconductor chips) 71 - 1, 71 - 2 such as MEMS devices, CPUs, memories, etc. and a through - electrode substrate 10 are laminated, and is connected to an LSI substrate 70.

[0081] The through - electrode substrate 10 is disposed between the semiconductor circuit board 71 - 1 and the semiconductor circuit board 71 - 2 and is connected to each via bumps 90 - 1, 90 - 2. The semiconductor circuit board 71 - 1 is placed on the LSI substrate 70. The LSI substrate 70 and the semiconductor circuit board 71 - 2 are connected by a wire 95. In this example, the through - electrode substrate 10 is used as an interposer for three - dimensional mounting by laminating a plurality of semiconductor circuit boards. By connecting the through - electrode substrate 10 to a plurality of semiconductor circuit boards having different functions respectively, a multi - functional semiconductor device can be realized. For example, by using the semiconductor circuit board 71 - 1 as a three - axis acceleration sensor and the semiconductor circuit board 71 - 2 as a two - axis magnetic sensor, a semiconductor device that realizes a five - axis motion sensor in one module can be realized.

[0082] When the semiconductor circuit board is a sensor formed by a MEMS device or the like, the sensing result may be output by an analog signal. In this case, a low - pass filter, an amplifier, etc. may also be formed on the semiconductor circuit board or the through - electrode substrate 10.

[0083] FIG. 34 is a diagram showing another example of a semiconductor device according to the fifth embodiment of the present invention. The above two examples (FIGS. 32 and 33) were three-dimensional implementations, but in this example, it is an example applied to a 2.5-dimensional implementation. In the example shown in FIG. 34, six through-electrode substrates 10 (10-1 to 10-6) are laminated and connected to the LSI substrate 70. However, not only are all the through-electrode substrates 10 laminated and arranged, but they are also arranged side by side in the in-plane direction of the substrate.

[0084] In the example of FIG. 34, the through-electrode substrates 10-1 and 10-5 are connected on the LSI substrate 70, the through-electrode substrates 10-2 and 10-4 are connected on the through-electrode substrate 10-1, the through-electrode substrate 10-3 is connected on the through-electrode substrate 10-2, and the through-electrode substrate 10-6 is connected on the through-electrode substrate 10-5. Note that, as in the example shown in FIG. 33, such a 2.5-dimensional implementation is also possible even if the through-electrode substrate 10 is used as an interposer for connecting a plurality of semiconductor circuit substrates. For example, the through-electrode substrates 10-3, 10-4, 10-6, etc. may be replaced with semiconductor circuit substrates.

[0085] The semiconductor device 1000 manufactured as described above is mounted on various electric devices such as, for example, portable terminals (such as mobile phones, smartphones, and notebook personal computers), information processing devices (such as desktop personal computers, servers, and car navigation systems), and home appliances.

[0086] FIG. 35 is a diagram showing an electronic device using the semiconductor device according to the fifth embodiment of the present invention. The semiconductor device 1000 is mounted on various electric devices such as, for example, a portable terminal (such as a mobile phone, a smartphone, and a notebook personal computer), an information processing device (such as a desktop personal computer, a server, and a car navigation system), and a home appliance. Examples of the electric devices on which the semiconductor device 1000 is mounted are shown as a smartphone 500 and a notebook personal computer 600. These electric devices include a control unit 1100 configured by a CPU or the like that executes an application program to realize various functions. The various functions include a function of using an output signal from the semiconductor device 1000. Note that the semiconductor device 1000 may have the function of the control unit 1100.

Description of Reference Numerals

[0087] 10... Through-electrode substrate, 50... Through electrode, 51... First metal layer, 52... Second metal layer, 70... LSI substrate, 71... Semiconductor circuit substrate, 80, 81, 82... Connection terminals, 90... Bump, 95... Wire, 100... Glass substrate, 101... First surface, 102... Second surface, 150... Through hole, 210, 220... Wiring layer, 212, 222... Conductive layer, 215, 225... Insulating layer, 500... Smartphone, 600... Notebook personal computer, 1000... Semiconductor device, 1100... Control unit

Claims

1. a substrate including a through hole that penetrates from a first surface to a second surface and has a diameter that does not have a minimum value inside the hole; a conductor formed by filling the through hole; Equipped with The through hole satisfies the condition that the sum of the inclination angles (the angle at which the first surface side extends is defined as a positive inclination angle) of the inner surface with respect to the central axis of the through hole at positions at distances of 6.25%, 18.75%, 31.25%, 43.75%, 56.25%, 68.75%, 81.25%, and 93.75% from the first surface in the section from the first surface to the second surface is 11.71° or more, and the inclination angles of the inner surface with respect to the central axis of the through hole at positions at distances of 43.75%, 56.25%, and 81.25% in the section from the first surface to the second surface decrease in order.

2. A substrate including a through hole that penetrates from a first surface to a second surface and has a minimum diameter inside the hole; a conductor formed by filling the through hole; Equipped with The through hole satisfies the condition that the sum of the inclination angles (the angle at which the first surface side extends is defined as a positive inclination angle) of the inner surface with respect to the central axis of the through hole at positions at distances of 6.25%, 18.75%, 31.25%, and 43.75% from the first surface in the section from the first surface to the second surface is 11.71° or more, and the sum of the inclination angles of the inner surface with respect to the central axis of the through hole at positions at distances of 56.25%, 68.75%, 81.25%, and 93.75% from the first surface is -11.71° or less, and the inclination angles of the inner surface with respect to the central axis of the through hole at positions at distances of 18.75%, 43.75%, 56.25%, and 81.25% from the first surface in the section from the first surface to the second surface decrease in order.

3. The conductor includes a first metal layer and a second metal layer; the first metal layer is disposed between the second metal layer and the substrate; The through hole electrode substrate according to claim 1 , wherein the first metal layer is disposed on at least a portion of both the first surface and the second surface.

4. A through-hole electrode substrate as described in Claim 3, wherein at least a portion of the first metal layer arranged on the first surface and the second surface is connected to the first metal layer arranged inside the through hole.

5. A through-hole electrode substrate as described in claim 3 or claim 4, wherein the first metal layer arranged inside the through-hole is thinner than the first metal layers arranged on the first surface and the second surface.

6. A through-electrode substrate as described in any of claims 3 to 5, wherein the first metal layer arranged on the first surface and the second surface has a thickness of 0.1 μm or more and 3 μm or less.

7. A through-electrode substrate described in any one of claims 1 to 6, wherein the substrate is a glass substrate.

8. A through-electrode substrate described in any of claims 1 to 7, wherein the conductor includes a first metal layer arranged on the substrate and a second metal layer arranged on the first metal layer.

9. A through-electrode substrate described in any one of claims 1 to 8, wherein the aspect ratio of the through hole is 4 or more.

10. A through-electrode substrate as described in any one of claims 1 to 9, wherein the through-hole has a diameter that further has a maximum value inside the hole.

11. A through-hole electrode substrate according to any one of claims 1 to 10, a semiconductor circuit substrate electrically connected to the conductor of the through electrode substrate; A semiconductor device having:

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