Substrate processing device, and method of producing article

Abstract

To provide a technique advantageous for improving the uniformity of the drying speed.SOLUTION: The substrate processing device comprises a container having an exhaust port and defining an internal space for a substrate to be disposed therein and a cover disposed inside the container to face the main surface of the substrate disposed inside the container. The cover comprises a first flow path communicating a first space and a second space, and a second flow path positioned farther from the exhaust port relative to the first flow path, and communicating the first space and the second space. The first flow path includes a first flow path end on the first space side and a second flow path end on the second space side. The second flow path includes a third flow path end on the first space side and a fourth flow path end on the second space side.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present disclosure relates to substrate processing.

Background Art

[0002] When manufacturing an article such as a panel (organic EL panel) having an OLED (Organic Light Emitting Diode) which is an organic EL (Electro Luminescence) element, a method of applying a solution film to a desired location on a substrate using an inkjet device is known. The solution film is a film composed of a solution containing a solute and a solvent. By drying the solution film applied on the substrate, a film (layer) is formed on the substrate. For drying the solution film, a reduced-pressure drying device which is a substrate processing device is used.

[0003] Patent Document 1 discloses a drying chamber including a mask having a plurality of vapor permeation regions and a plurality of vapor barrier regions. Each of the plurality of vapor permeation regions is, for example, an opening.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] From the viewpoint of the uniformity of the film thickness, it is required that the drying rate of the solvent disposed on the main surface of the substrate is uniform in the in-plane direction along the main surface of the substrate. The drying rate is also affected by the position of the exhaust port of the container with respect to the flow path of the solvent vapor such as an opening.

[0006] Therefore, the present disclosure provides a technique advantageous for improving the uniformity of the drying rate.

Means for Solving the Problems

[0007] One aspect of the present disclosure includes a container having an exhaust port and defining an internal space in which a substrate is disposed, and a cover disposed inside the container so as to face a main surface of the substrate disposed inside the container. The cover has a first flow path that communicates a first space on the substrate side with respect to the cover and a second space on the side opposite to the substrate with respect to the cover, and a second flow path that is located farther from the exhaust port than the first flow path and communicates the first space and the second space. The first flow path includes a first flow path end on the first space side and a second flow path end on the second space side, and the second flow path includes a third flow path end on the first space side and a fourth flow path end on the second space side. The substrate processing apparatus is characterized by the above.

Advantages of the Invention

[0008] According to the present disclosure, a technique advantageous for improving the uniformity of the drying speed is provided.

Brief Description of the Drawings

[0009]

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Embodiments for Carrying Out the Invention

[0010] Hereinafter, exemplary embodiments of the present disclosure will be described in detail with reference to the drawings. In each figure, the same members are denoted by the same reference numerals, and overlapping explanations are omitted. In the following embodiments, the directions are indicated by an XYZ coordinate system which is an orthogonal coordinate system. In the XYZ coordinate system, the XY plane is a horizontal plane, the Z direction is the vertical direction, and the minus direction of the Z axis is the vertical direction (gravity direction).

[0011] <First Embodiment> FIG. 1 and FIG. 2 are schematic cross-sectional views showing the configuration of a vacuum drying apparatus 100 which is an example of a substrate processing apparatus according to the first embodiment. In FIG. 1, a cross-section of the vacuum drying apparatus 100 along a virtual plane PL1 shown in FIG. 2 is illustrated. The virtual plane PL1 is a virtual plane parallel to the YZ plane. In FIG. 2, a cross-section of the vacuum drying apparatus 100 along a virtual plane parallel to the XY plane is illustrated.

[0012] The vacuum drying apparatus 100 is used in a part of the process of manufacturing an organic EL panel having an OLED which is an organic EL element. That is, the vacuum drying apparatus 100 forms an organic film on the substrate S by performing a drying process for drying the solution film F applied to the substrate S.

[0013] The solution film F is composed of, for example, a solution (liquid) containing a solute and a solvent for forming an organic film. The solvent contained in the solution film F preferably has a property that evaporation is promoted in a reduced pressure environment lower than atmospheric pressure (1 atm). The evaporation of the solvent is preferably promoted, for example, at a temperature higher than room temperature (25°C).

[0014] The solvent is preferably an organic solvent. The solvent contains at least one organic solvent. Examples of the organic solvent include N,N-dimethylformamide, N,N-dimethylacetamide, N-methylpyrrolidone, 1,3-dimethyl-2-imidazolidinone, diethylene glycol monomethyl ether, cyclohexanone, N,N-dimethylisobutyramide, N-methylformamide, N-methylacetamide, N-diethylformamide, cyclohexanol, ethylene glycol, ethylene glycol diglycidyl ether, 1,3-octylene glycol, diethylene glycol, dipropylene glycol, triethylene glycol, tripropylene glycol, 1,3-butanediol, 1,4-butanediol, propylene glycol, hexylene glycol, propylene glycol monomethyl ether, ethylene glycol monobutyl ether, diethylene glycol diethyl ether, diethylene glycol dimethyl ether, ethylene glycol monoethyl ether acetate, ethylene glycol monobutyl ether acetate, dipropylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, diethylene glycol monoethyl ether, diacetone alcohol, γ-butyrolactone, ethyl lactate, N-hexyl acetate, ethyl cellosolve acetate, cyclohexylbenzene, and the like.

[0015] The organic film is an organic layer, for example, any one of a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, or an electron injection layer of an OLED. The manufacture of the organic EL element includes a step of forming each of the organic films of the hole injection layer, the hole transport layer, the light-emitting layer, the electron transport layer, and the electron injection layer on the substrate S. The solution film F is applied to necessary portions on the substrate S by a coating device before the substrate S is carried into the vacuum drying device 100.

[0016] The vacuum drying apparatus 100 includes a container 10, a decompression mechanism 30 that decompresses the inside of the container 10, and a substrate holding unit 20 that is disposed inside the container 10 and can hold a substrate S. The substrate S is disposed on the upper surface of the substrate holding unit 20. Further, the vacuum drying apparatus 100 includes a cover unit 400 disposed at a position surrounding the substrate S held by the substrate holding unit 20 inside the container 10. The cover unit 400 is disposed at a position that does not contact the substrate S held by the substrate holding unit 20 inside the container 10.

[0017] The container 10 can be an airtight container. The pressure of the external environment of the container 10 is atmospheric pressure, for example, 1 atm. The container 10 is a member that defines an internal space SP0 which is a drying chamber where the substrate S is transported. The internal space SP0 includes a space SP2 surrounded by the cover unit 400 and a space SP1 other than the space SP2. In the first embodiment, the space SP2 is a space surrounded by the substrate holding unit 20 and the cover unit 400.

[0018] The space SP2 is a space on the substrate S side with respect to the cover 40, and the space SP1 is a space on the side opposite to the substrate S with respect to the cover 40. The space SP2 is an example of a first space, and the space SP1 is an example of a second space.

[0019] The space SP2 inside the cover unit 400 and the space SP1 outside the cover unit 400 communicate with each other, but are adjusted so that the pressure distribution in the space SP2 becomes as uniform as possible by surrounding the substrate S with the cover unit 400.

[0020] Further, the vacuum drying apparatus 100 includes a gate valve 12 provided in the container 10. The substrate S coated with the solution film F to be subjected to the drying process is carried into the internal space SP0 from the external space (for example, another container) of the container 10 through the gate valve 12. Further, the substrate S that has undergone the drying process is carried out from the internal space SP0 to the external space (for example, another container) through the gate valve 12.

[0021] The loading and unloading of the substrate S with respect to the container 10 are performed by a transfer robot RB, which is an example of a transfer device placed outside the container 10. The transfer robot RB performs the loading of the substrate S onto the substrate holding unit 20 and the unloading of the substrate S from the substrate holding unit 20 in response to a command from a control device 90 described later, for example. At that time, the substrate S can be transferred through the gate valve 12 on the transfer route and the slit opening 46 of the surrounding wall 41.

[0022] The slit opening 46 can be closed by a shutter 47 except when the substrate S is being transferred. The shutter 47 is a mechanical shutter and can be a part of the cover unit 400 that defines the space SP2. When the substrate S is being loaded, it can be transferred from the external space through the gate valve 12 and the slit opening 46 via the space SP1 to the space SP2. When the substrate S that has undergone the drying process is being unloaded, it can be transferred from the space SP2 via the space SP1 to the external space through the slit opening 46 and the gate valve 12. Note that the vacuum drying device 100 may include a lifting mechanism (not shown) that raises and lowers the cover unit 400 when loading the substrate S onto the substrate holding unit 20 and unloading the substrate S from the substrate holding unit 20, instead of the slit opening 46 and the shutter 47.

[0023] At least one exhaust port, and in the first embodiment, a plurality of exhaust ports 21 to 24 are formed in the upper part of the side wall of the container 10. In FIG. 1, the exhaust ports 21 and 22 are shown. An exhaust duct is connected to each of the exhaust ports 21 to 24, and by operating the decompression mechanism 30, the gas in the internal space SP0 of the container 10 can be exhausted through the exhaust duct, and the internal space SP0 of the container 10 can be decompressed. The decompression mechanism 30 includes at least one pump, for example, a plurality of pumps. The plurality of pumps includes at least one of, for example, a dry pump and a diaphragm vacuum pump. Also, the plurality of pumps may include at least one of, for example, a turbo molecular pump, a cryopump, a soap solution pump, an oil diffusion pump, a mechanical booster pump, an ejector pump, and an oil rotary vacuum pump.

[0024] The reduced-pressure drying apparatus 100 further includes a temperature control unit 70. The temperature control unit 70 controls the temperature of the substrate S or the solution film F on the substrate S by controlling the temperature of the substrate holding unit 20. The temperature control unit 70 may typically include a heater that heats the substrate holding unit 20. The temperature control unit 70 may also include a cooler that cools the substrate holding unit 20. The temperature control unit 70 controls the temperature of the substrate holding unit 20 by performing at least one of heating and cooling on the substrate holding unit 20.

[0025] The temperature control unit 70 controls the multiple regions of the substrate holding unit 20 to the same temperature or different temperatures so that the substrate S has a uniform temperature distribution. Preferably, the temperature control unit 70 controls the temperature difference between the multiple regions of the substrate S held on the substrate holding unit 20 to within 10°C. More preferably, the temperature control unit 70 controls the temperature difference between the multiple regions of the substrate S held on the substrate holding unit 20 to within 5°C. The temperature control unit 70 controls the temperature of the substrate holding unit 20 so that the temperature of the substrate S becomes a predetermined temperature within the range of 0°C to 100°C. By heating the substrate holding unit 20, the drying speed of the solution film F coated on the substrate S can be improved.

[0026] The cover unit 400 is disposed on the substrate holder 20. The cover unit 400 is primarily made of metal. Suitable metals include stainless steel and aluminum. Suitable stainless steel is, for example, austenitic stainless steel containing 0.045% or less of phosphorus and 0.030% or less of sulfur (i.e., stainless steel designated as SUS304 in the Japanese Industrial Standards (JIS)).

[0027] The cover unit 400 includes an enclosure wall 41 and a cover 40. The cover 40 may be configured integrally with the enclosure wall 41, or may be a separate body from the enclosure wall 41.

[0028] The surrounding wall 41 is an example of a side wall member. The surrounding wall 41 is a member that surrounds the outer periphery of the substrate S. Further, the surrounding wall 41 is a member that supports the cover 40, is placed or fixed on the substrate holding portion 20, and is disposed at a position where it can face the side surface SS of the substrate S disposed on the substrate holding portion 20. Note that the surrounding wall 41 may be placed on another member.

[0029] The cover 40 is disposed at a position facing the main surface MS of the substrate S conveyed onto the substrate holding portion 20 in a direction perpendicular to the upper surface of the substrate holding portion 20, that is, the Z direction. Specifically, the cover 40 is disposed at a position facing the solution film F applied on the main surface MS of the substrate S in the Z direction. The cover 40 is disposed on the surrounding wall 41. The upper surface of the substrate holding portion 20 and the main surface MS of the substrate S are parallel to each other.

[0030] Further, the vacuum drying apparatus 100 includes a gas introduction portion 51 that introduces an inert gas into the space SP1, and a gas introduction portion 52 that introduces an inert gas into the space SP2. The gas introduction portions 51 and 52 are preferably flexible tubes, for example. A valve 53 is disposed in the gas introduction portion 51. Further, a valve 54 is disposed in the gas introduction portion 52.

[0031] The gas introduction portion 51 is provided so as to penetrate the container 10 and is configured to supply an inert gas to the space SP1. The gas introduction portion 52 is provided so as to penetrate the container 10 and the surrounding wall 41 of the cover unit 400 and is configured to supply an inert gas to the space SP2.

[0032] The inert gas is, for example, nitrogen. In the first embodiment, the gas supplied from each of the gas introduction portions 51 and 52 into the interior of the container 10 is preferably an inert gas, but a gas having a composition different from that of the solvent of the solution film F may be a gas other than the inert gas, for example, clean dry air.

[0033] The pressure in the internal space SP0 of the container 10, particularly the pressure in the space SP1, is adjusted by supplying gas to the space SP1 via the gas inlet 51. The pressure in the internal space SP0 of the container 10, particularly the pressure in the space SP2, is adjusted by supplying gas to the space SP2 via the gas inlet 52.

[0034] The reduced-pressure drying apparatus 100 may further include a gas analyzer 60 that detects a specific gas in the space SP2. The gas analyzer 60 is an example of a gas analysis unit. The gas in the space SP2 is introduced into a gas inlet of the gas analyzer 60 via a connecting member 62. The gas analyzer 60 is, for example, a residual gas analyzer (RGA) such as a mass spectrometer. The specific gas detected by the gas analyzer 60 is solvent vapor (gas) evaporating from the solution film F on the substrate S. The connecting member 62 may be a flexible tube, for example, a glass fiber tube, or a bellows.

[0035] The connecting member 62 has a first end 621 and a second end 622, the first end 621 being connected to the gas inlet of the gas analyzer 60, and the second end 622 being positioned to protrude from the inner surface of the cover unit 400 into the space SP2.

[0036] The cover 40 has a plurality of flow paths 42. Each flow path 42 is a through hole that connects the space SP1 and the space SP2. That is, each of the plurality of flow paths 42 is defined by the cover 40. The shape of the flow path 42 may be a circular cross section or a strip-shaped cross section such as a slit.

[0037] The aperture area per unit area in the cover 40 is referred to as the aperture ratio. The cover 40 has the areas of the respective flow paths 42 adjusted such that the aperture ratio near the outer periphery of the substrate S is smaller than the aperture ratio near the center of the substrate S. For example, in the cover 40, the aperture ratio of the portion facing the center of the substrate S may be defined to be 40 to 70%, and the aperture ratio of the portion facing the outer periphery of the substrate S may be defined to be 20 to 50%. As a means for adjusting the aperture ratio, the size of each flow path 42 may be changed while keeping the number of flow paths 42 per unit area constant, or the number of flow paths 42 per unit area may be changed. Also, the surrounding wall 41 may be configured to communicate the space SP1 and the space SP2. For example, flow paths may also be formed in the surrounding wall 41.

[0038] Further, the vacuum drying apparatus 100 further includes a control device 90 that controls each part of the entire apparatus. The control device 90 is an example of a control unit. The control device 90 is configured by, for example, a computer. The control device 90 includes a CPU which is an example of a processor, a RAM which is a temporary storage device, a ROM and an SSD which are non-temporary storage devices (recording media), an I / O which is an interface, and the like. A control program for causing the CPU of the control device 90 to execute the control of each part of the entire apparatus in the manufacturing process described later is stored in the non-temporary storage device.

[0039] The control device 90 controls the opening and closing of the gate valve 12 and the shutter 47. Also, the control device 90 controls the pressure inside the container 10 by controlling the decompression mechanism 30. Also, the control device 90 controls the supply and stop of gas to the inside of the container 10 and the gas flow rate by controlling the valves 53 and 54.

[0040] Note that the control device 90 may be configured by, in addition to the above-described configuration, a PLD (abbreviation for Programmable Logic Device) such as an FPGA (abbreviation for Field Programmable Gate Array), an ASIC (abbreviation for Application Specific Integrated Circuit), a general-purpose or dedicated computer in which a program is incorporated, or a combination of all or part of these.

[0041] Among the multiple steps in the method for manufacturing an organic EL panel, which is an example of an article, some steps, including a drying step (drying treatment), will be described below. A solution film F is applied to a required location on the main surface MS of the substrate S by a coating device such as an inkjet device. Then, the substrate S with the solution film F applied thereto is carried into the space SP2 inside the cover unit 400 by a transfer robot RB. Then, under the control of the control device 90, a drying treatment is performed to dry the solution film F on the substrate S, i.e., to evaporate the solvent in the solution film F. The drying treatment may include multiple drying steps. In each drying step, the control device 90 controls the pressure inside the container 10, i.e., the pressure in the internal space SP0, by controlling the decompression mechanism 30.

[0042] 3 is a flowchart of the method for manufacturing an article according to the first embodiment. In step S1, the control device 90 controls the transfer robot RB to carry the substrate S coated with the solution film F into the substrate holder 20 disposed inside the container 10. As a result, the substrate S is placed on the substrate holder 20. Next, in step S2, the control device 90 moves the shutter 47 to the closed position.

[0043] Next, in step S3, the control device 90 executes each drying process of the drying process. The drying process of step S3 will be specifically described below. FIG. 4 is a graph showing an example of pressure control in the drying process according to the first embodiment. The horizontal axis in FIG. 4 represents time, and the vertical axis represents the pressure in the internal space SP0. The pressure in the internal space SP0 of the container 10 can be detected by a pressure gauge (not shown). In the example of FIG. 4, the multiple drying processes are four drying processes D11 to D14, but the number of drying processes is not limited to four.

[0044] First, the control device 90 controls the decompression mechanism 30 so that the pressure in the internal space SP0 of the container 10 decreases from atmospheric pressure to the first pressure P1 (drying step D11). As a result, the inside of the container 10 is decompressed to the first pressure P1. The drying step D11 is a step in the process of decompressing from atmospheric pressure to the first pressure P1. The first pressure P1 is a pressure lower than atmospheric pressure and higher than the vapor pressure of the solvent. Then, after the pressure in the internal space SP0 reaches the first pressure P1, the control device 90 controls the decompression mechanism 30 so that the pressure in the internal space SP0 is maintained at the first pressure P1 for the first period of time (drying step D12).

[0045] That is, in the drying step D12, the control device 90 controls the exhaust amount of the gas of the decompression mechanism 30 and the introduction amount of the gas of the gas introduction part 51 so as to be the first pressure P1 higher than the vapor pressure of the solvent. The pressure inside the container 10 can be determined by adjusting the balance between the exhaust amount of the gas by the decompression mechanism 30 and the supply amount of the inert gas. Note that not limited to the drying step D12, in any of the other drying steps D11, D13, D14, for example, in the drying step D14, an inert gas may be supplied from the gas introduction part 51 to the space SP1.

[0046] In order to uniformly adjust the pressure distribution around the substrate S, that is, in order to uniformly adjust the evaporation rate of the solvent of the solution film F on the substrate S, in the first embodiment, the substrate S is surrounded by the cover unit 400. When the solvent evaporates from the solution film F, the vapor of the solvent temporarily stays in the space SP2 surrounded by the cover unit 400. Then, through the flow path 42, the vapor of the solvent flows from the space SP2 to the space SP1. The vapor that has flowed into the space SP1 is exhausted by the decompression mechanism 30 through the exhaust duct connected to the exhaust ports 21 to 24 of the container 10.

[0047] In the drying process D12, the pressure in the space SP2 is maintained at the first pressure P1, so that the solution film F dries uniformly. That is, the solution film F can be dried so that the film thickness of the solution film F becomes uniform. Therefore, the surface of the solution film F can be made flat. In addition, a plurality of flow paths 42 are formed in the cover unit 400. In the drying process D12, the size and number of the flow paths 42 are adjusted so that the pressure distribution in the space SP2 becomes uniform while maintaining the pressure in the space SP2 at a predetermined pressure. For this reason, the pressure in the space SP2 is finely adjusted, and the solution film F can be dried more effectively uniformly. The shape of the solution film F is approximately determined by the drying process D12.

[0048] After the elapse of the first time, that is, after the first process, the control device 90 controls the exhaust amount of the gas of the decompression mechanism 30 and the introduction amount of the gas of the gas introduction part 52 so that the pressure in the internal space SP0 of the container 10 drops from the first pressure P1 to the second pressure P2 (drying process D13). Thereby, the inside of the container 10 is decompressed to the second pressure P2. The drying process D13 is a process in the process of decompressing from the first pressure P1 to the second pressure P2. The second pressure P2 is a pressure lower than the first pressure P1 and lower than the vapor pressure of the solvent. Then, after the pressure inside the container 10 reaches the second pressure P2, the control device 90 controls the exhaust amount of the gas of the decompression mechanism 30 and the introduction amount of the gas of the gas introduction part 52 so that the pressure in the internal space SP0 is maintained at the second pressure P2 for the second time (drying process D14).

[0049] The gas introduction part 52 can maintain the pressure in the space SP2 at the second pressure by supplying an inert gas even in a state where the decompression mechanism 30 is operating in the drying process D14. That is, the pressure inside the container 10 can be determined by adjusting the balance between the exhaust amount of the gas by the decompression mechanism 30 and the supply amount of the inert gas. In addition, the inert gas output from the gas introduction part 52 can also function as a means for discharging the solvent vapor staying in the space SP2. Note that the gas introduction part 51 may supply an inert gas to the space SP1 in the drying process D14.

[0050] After the drying process D13, the solution film F on the substrate S is further dried while reducing the pressure inside the container 10 to the second pressure P2. In particular, in the drying process D14, the solution film F on the substrate S is further dried while maintaining the pressure in the internal space SP0 at the second pressure P2. Thereby, the drying time of the solution film F can be shortened.

[0051] In step S4, the control device 90 determines whether all the drying processes have ended, that is, whether the drying process has ended. Whether each drying process has ended is determined based on a preset processing time. Note that whether each drying process has ended may be determined based on the output value of the gas analyzer 60. Further, when the drying process includes a plurality of drying processes, the control device 90 may perform the determination process in step S4 after the start of the last drying process among the plurality of drying processes.

[0052] If step S4 is YES, that is, if the drying process has ended, the control device 90 executes the next step S5. If step S4 is NO, that is, if the drying process has not ended, the control device 90 returns to the process of step S3 again and continues the drying process.

[0053] In step S5, the control device 90 moves the shutter 47 to the open position, and in step S6, controls the transfer robot RB so that the substrate S held by the substrate holding unit 20 is carried out of the container 10.

[0054] FIG. 5 is a schematic cross-sectional view showing the positional relationship between the three flow paths 421, 422, 423 of the cover 40 of the first embodiment and the exhaust port 22 of the container 10. In FIG. 5, among the plurality of flow paths 42, three flow paths 421 to 423 intersecting the virtual plane PL1 are shown. That is, FIG. 5 shows a cross-section along the virtual plane PL1 of a part of the configuration of the vacuum drying apparatus 100. Each of the flow paths 421 to 423 is a flow path that communicates the space SP1 and the space SP2. The flow path 421 is an example of the first flow path, the flow path 422 is an example of the second flow path, and the flow path 423 is an example of the third flow path. The flow paths 421 to 423 are arranged adjacent to each other in the Y direction.

[0055] 2, in the first embodiment, three flow paths 421 to 423 are arranged near the exhaust ports 21 to 24 in correspondence with each other. The arrangement and configuration of the three flow paths 421 to 423 for the exhaust ports 21 to 24 are the same, and the following describes the three flow paths 421 to 423 arranged in correspondence with the exhaust port 22.

[0056] The cover 40 includes a flat plate member 401, a cylindrical member 411 protruding from the plate member 401 toward the space SP1, a cylindrical member 412 protruding from the plate member 401 toward the space SP1, and a cylindrical member 413 protruding from the plate member 401 toward the space SP1. A flow path 421 is defined by an opening in the plate member 401 and the cylindrical member 411 connected to the opening. A flow path 422 is defined by an opening in the plate member 401 and the cylindrical member 412 connected to the opening. A flow path 423 is defined by an opening in the plate member 401 and the cylindrical member 413 connected to the opening. The cylindrical member 411 is an example of a first cylindrical member, the cylindrical member 412 is an example of a second cylindrical member, and the cylindrical member 413 is an example of a third cylindrical member.

[0057] Of the three flow paths 421 to 423, the flow path 421 is closest to the exhaust port 22. In the first embodiment, the flow path 421 is closest to the exhaust port 22 of all the flow paths 42 included in the cover 40.

[0058] Furthermore, comparing the distance from each of the three flow paths 421 to 423 to the exhaust port 22, the flow path 422 is farther from the exhaust port 22 than the flow path 421 and closer to the exhaust port 22 than the flow path 423.

[0059] Furthermore, comparing the distance from each of the three flow paths 421 to 423 to the exhaust port 22, the flow path 423 is located farther from the exhaust port 22 than the flow paths 421 and 422. That is, the flow path 423 is located farthest from the exhaust port 22 among the three flow paths 421 to 423.

[0060] The flow path 421 includes a flow path end E1 on the space SP2 side and a flow path end E2 on the space SP1 side. The flow path 422 includes a flow path end E3 on the space SP2 side and a flow path end E4 on the space SP1 side. The flow path 423 includes a flow path end E5 on the space SP2 side and a flow path end E6 on the space SP1 side. The flow path end E1 is an example of a first flow path end, the flow path end E2 is an example of a second flow path end, the flow path end E3 is an example of a third flow path end, the flow path end E4 is an example of a fourth flow path end, the flow path end E5 is an example of a fifth flow path end, and the flow path end E6 is an example of a sixth flow path end. Note that the imaginary plane PL1 is an imaginary plane parallel to the YZ plane, intersecting the center of the flow path end E1 and the center of the flow path end E3. The imaginary plane PL1 intersects with the flow path 423. That is, the flow paths 421 to 423 are arranged at intervals from one another in the Y direction. In the first embodiment, the imaginary plane PL1 intersects with the center of the flow path end E5 of the flow path 423. The imaginary plane PL1 also intersects with the exhaust port 22.

[0061] Here, the cover of Comparative Example 1 will be described. Fig. 11 is a schematic cross-sectional view showing the positional relationship between three flow paths 421X, 422X, and 423X of the cover 40X of Comparative Example 1 and the exhaust port 22 of the container 10. The cover 40X of Comparative Example 1 is a flat plate member, and has a plurality of flow paths formed therein. Fig. 11 shows three of the plurality of flow paths: 421X, 422X, and 423X. The flow paths 421X, 422X, and 423X are arranged in this order in a direction away from the exhaust port 22.

[0062] In the drying steps D11 to D14, the solvent vapor evaporated from the solution film F on the substrate S flows out from the space SP2 to the space SP1 through the flow paths 421X to 423X. Since the flow path 421X is closest to the exhaust port 22, the flow rate of the solvent vapor passing through the flow path 421X is larger than the flow rates of the solvent vapor passing through the other flow paths 422X and 423X. Therefore, in the space SP2, the concentration of the solvent vapor near the flow path 422X becomes higher than the concentration of the solvent vapor near the flow path 421X. Also, the flow rate of the solvent vapor passing through the flow path 422X is larger than the flow rate of the solvent vapor passing through the flow path 423X. Therefore, in the space SP2, the concentration of the solvent vapor near the flow path 423X becomes higher than the concentration of the solvent vapor near the flow path 422X. Thus, in the solution film F disposed on the main surface MS of the substrate S, the evaporation amount of the solvent in the portion facing the flow path 423X becomes smaller than each of the evaporation amount of the solvent in the portion facing the flow path 421X and the evaporation amount of the solvent in the portion facing the flow path 422X. In this way, in Comparative Example 1, there is a possibility that the evaporation amount of the solvent in the solution film F becomes non-uniform, and there is a possibility that the thickness of the formed film becomes non-uniform.

[0063] In the first embodiment, as shown in FIG. 5, a region A1 linearly extending from the flow path end E2 to the space SP1 along the flow path 421 and a region A2 linearly extending from the flow path end E4 to the space SP1 along the flow path 422 intersect. The region A1 is an example of the first region, and the region A2 is an example of the second region.

[0064] Further, in the first embodiment, at least one of the direction D1 along the flow path 421 from the flow path end E2 toward the space SP1 and the direction D2 along the flow path 422 from the flow path end E4 toward the space SP1 is inclined with respect to the direction D0 orthogonal to the main surface MS so as to go in a direction in which the downstream sides of the direction D1 and the direction D2 approach each other. The direction D0 is also the positive direction of the Z axis and the normal direction of the main surface MS. The direction D1 is an example of the first direction. The direction D2 is an example of the second direction. The direction D1 and the direction D2 are directions intersecting each other. The direction D1 and the direction D2 are also the outflow directions of the solvent vapor. The direction D1 is also the direction along the region A1, and the direction D2 is also the direction along the region A2.

[0065] In drying steps D11 to D14, the solvent vapor evaporated from the solution film F on the substrate S flows out from the space SP2 to the space SP1 through the respective flow paths 421 and 422. In the first embodiment, at least one of the direction D1 along the flow path 421 and the direction D2 along the flow path 422 is inclined with respect to the direction D0, so that the downstream side of the direction D1 and the downstream side of the direction D2 are closer to each other. Thereby, the region A1 and the region A2 intersect.

[0066] The solvent vapor flowing out from the flow path end E2 of the flow path 421 to the space SP1 easily flows along the region A1, and the solvent vapor flowing out from the flow path end E4 of the flow path 422 to the space SP1 easily flows along the region A2. Therefore, the solvent vapor flowing out from the flow path end E2 of the flow path 421 and the solvent vapor flowing out from the flow path end E4 of the flow path 422 are likely to collide in the space SP1. Thereby, the flow of the solvent vapor flowing out from the flow path end E2 of the flow path 421 to the space SP1 and the flow of the solvent vapor flowing out from the flow path end E4 of the flow path 422 to the space SP1 are obstructed from each other.

[0067] Since the flows of the solvent vapor are obstructed from each other, the flow rate of the solvent vapor flowing out from the flow path 421 to the space SP1 becomes smaller than the flow rate of the solvent vapor flowing out from the flow path 421X of Comparative Example 1 to the space SP1, and the flow rate of the solvent vapor flowing out from the flow path 422 to the space SP1 becomes smaller than the flow rate of the solvent vapor flowing out from the flow path 422X of Comparative Example 1 to the space SP1. That is, the flow rates of the solvent vapor flowing out from the flow paths 421 and 422 to the space SP1 are adjusted. Thereby, the difference in the flow rates of the solvent vapor flowing out from each flow path 42 to the space SP1 becomes smaller, and in the in-plane direction along the main surface MS, the difference in the drying rate of the solution film F becomes smaller. Therefore, the uniformity of the drying rate of the solution film F is improved, and the quality of the formed film is improved.

[0068] Although it is preferable that the region A1 and the region A2 intersect, as long as the direction D1 and the direction D2 are inclined with respect to the direction D0 so as to go in the direction in which the downstream side of the direction D1 and the downstream side of the direction D2 approach each other, the region A1 and the region A2 may be separated.

[0069] In the first embodiment, both the direction D1 and the direction D2 are inclined with respect to the direction D0. Thus, since both the directions D1 and D2 are inclined with respect to the direction D0 which is the normal direction perpendicular to the main surface MS of the substrate S, the flow rate of the solvent vapor passing through each of the flow paths 421 and 422 is effectively adjusted, the drying rate of the solution film F becomes uniform in the in-plane direction of the main surface MS, and the quality of the formed film is further improved.

[0070] In the first embodiment, it is preferable that the direction D1 is inclined with respect to the direction D0 such that the downstream side of the direction D1 faces away from the exhaust port 22. That is, the direction D1 points in the direction away from the exhaust port 22 as viewed in the direction D0. Thereby, the conductance of the solvent vapor from the flow path 421 to the exhaust port 22 is reduced. That is, the conductance of the flow path 421 becomes smaller than the conductance of the flow path 422, the flow rate of the solvent vapor passing through the flow path 421 is effectively adjusted, the drying rate of the solution film F becomes uniform in the in-plane direction of the main surface MS, and the quality of the formed film is further improved.

[0071] Also, it is preferable that the direction D2 is inclined with respect to the direction D0 such that the downstream side of the direction D2 faces toward the exhaust port 22. That is, the direction D2 points in the direction approaching the exhaust port 22 as viewed in the direction D0. Thereby, the flow of the solvent vapor flowing out from the flow path end E2 of the flow path 421 into the space SP1 and the flow of the solvent vapor flowing out from the flow path end E4 of the flow path 422 into the space SP1 effectively interfere with each other.

[0072] In the first embodiment, the direction D3 from the channel end E6 toward the space SP1 along the channel 423 is also inclined with respect to the direction D0 orthogonal to the main surface MS such that the downstream side in the direction D3 is toward the exhaust port 22. That is, the direction D3 points in the direction approaching the exhaust port 22 when viewed in the direction D0. The direction D3 is an example of the third direction. The direction D3 is also the outflow direction of the solvent vapor. Note that the direction D3 is also the direction along the region A3. Thus, in the first embodiment, the region A1 linearly extending from the channel end E2 to the space SP1 along the channel 421 and the region A3 linearly extending from the channel end E6 to the space SP1 along the channel 423 intersect. The region A3 is an example of the third region.

[0073] Since the direction D3 is inclined with respect to the direction D0 toward the exhaust port 22 in this way, the channel 423 is adjusted so that the solvent vapor easily flows, the flow rate of the solvent vapor passing through each channel 42 becomes uniform, the drying rate of the solution film F becomes uniform in the in-plane direction of the main surface MS, and the quality of the formed film is further improved.

[0074] Here, FIG. 2 schematically shows with arrows the directions of the respective channels 42 viewed in the negative direction of the Z axis. The plurality of channels 42 are sorted into channels corresponding to each of the exhaust ports 21 to 24. Fifteen channels 42 in three rows and five columns correspond to the exhaust port 22. It is preferable that the directions of each of the fifteen channels 42 face the direction orthogonal to the concentric circles centered on the exhaust port 22.

[0075] The flow path 421 includes a partial flow path F1 including the flow path end E1 and a partial flow path F2 including the flow path end E2. The partial flow path F1 is a flow path extending along the direction D0, and the partial flow path F2 is a flow path extending along the direction D1. That is, the direction D1 is the direction along the partial flow path F2. The partial flow path F1 is an example of the first partial flow path. The partial flow path F2 is an example of the second partial flow path. Thus, the partial flow path F2 is bent with respect to the partial flow path F1. The partial flow path F2 is inclined with respect to the partial flow path F1 in a direction away from the exhaust port 22. With the configuration of the flow path 421 as described above, the flow rate of the solvent vapor flowing out from the flow path end E2 of the flow path 421 is effectively adjusted, and the quality of the formed film is further improved.

[0076] The flow path 422 includes a partial flow path F3 including the flow path end E3 and a partial flow path F4 including the flow path end E4. The partial flow path F3 is a flow path extending along the direction D0, and the partial flow path F4 is a flow path extending along the direction D2. That is, the direction D2 is the direction along the partial flow path F4. The partial flow path F3 is an example of the third partial flow path. The partial flow path F4 is an example of the fourth partial flow path. Thus, the partial flow path F4 is bent with respect to the partial flow path F3. The partial flow path F4 is inclined with respect to the partial flow path F3 in a direction approaching the exhaust port 22. With the configuration of the flow path 422 as described above, the flow rate of the solvent vapor flowing out from the flow path end E4 of the flow path 422 is effectively adjusted, the drying rate of the solution film F becomes more uniform, and the quality of the formed film is further improved.

[0077] The flow path 423 includes a partial flow path F5 including a flow path end E5 and a partial flow path F6 including a flow path end E6. The partial flow path F5 is a flow path extending along the direction D0, and the partial flow path F6 is a flow path extending along the direction D3. That is, the direction D3 is the direction along the partial flow path F6. The partial flow path F5 is an example of a fifth partial flow path. The partial flow path F6 is an example of a sixth partial flow path. Thus, the partial flow path F6 is bent with respect to the partial flow path F5. The partial flow path F6 is inclined with respect to the partial flow path F5 in a direction approaching the exhaust port 22. With the configuration of the flow path 423 as described above, the flow rate of the solvent vapor flowing out from the flow path end E6 of the flow path 423 is effectively adjusted, the drying rate of the solution film F becomes more uniform, and the quality of the formed film is further improved.

[0078] In the direction D0, it is preferable that the height H1 of the flow path end E2 with respect to the main surface MS is higher than the height H2 of the flow path end E4 with respect to the main surface MS. Thereby, since the solvent vapor flowing out from the flow path end E2 of the flow path 421 collides with the solvent vapor flowing out from the flow path 422 in the vicinity of the flow path end E2, the flow rate of the solvent vapor flowing out from the flow path end E2 of the flow path 421 is more effectively adjusted.

[0079] Also, in the direction D0, it is preferable that the height H3 of the flow path end E6 with respect to the main surface MS is higher than the height H2 of the flow path end E4 with respect to the main surface MS, and also, in the direction D0, it is preferable that the height H3 of the flow path end E6 with respect to the main surface MS is higher than the height H1 of the flow path end E2 with respect to the main surface MS. That is, H2 < H1 < H3. With the above configuration, the flow rate of the solvent vapor flowing out from the flow path 423 into the space SP1 becomes larger than the flow rate of the solvent vapor flowing out from the flow path 423X of Comparative Example 1 into the space SP1, the flow rate of the solvent vapor passing through each flow path 42 becomes uniform, the drying rate of the solution film F becomes more uniform, and the quality of the formed film is further improved.

[0080] As described above, according to the first embodiment, the flow rate of the solvent vapor flowing out from each flow path 42 of the cover 40 into the space SP1 becomes uniform, the partial pressure of the solvent vapor near the main surface MS of the substrate S becomes uniform, and the evaporation rate of the solvent becomes uniform. Therefore, the drying rate of the solution film F becomes uniform in the in-plane direction of the main surface MS, and the quality of the formed film is improved.

[0081] <Modification of the first embodiment> Modifications of the first embodiment will be described below. Fig. 6(a) is an explanatory diagram of a modification of the first embodiment. Fig. 6(b) is an explanatory diagram of another modification of the first embodiment. In the first embodiment, the case where both the flow path 421 and the flow path 422 are curved has been described, but this is not limited to this. As shown in Fig. 6(a), the flow path 421 may be a straight flow path, or as shown in Fig. 6(b), the flow path 422 may be a straight flow path.

[0082] In the modified example shown in Fig. 6(a), the direction D1 is the same as the direction D0, but may be inclined with respect to the direction D0. In the modified example shown in Fig. 6(b), the direction D2 is the same as the direction D0, but may be inclined with respect to the direction D0. In addition, both the flow paths 421 and 422 may be straight flow paths, and at least one of the directions D1 and D2 may be inclined with respect to the direction D0.

[0083] Second Embodiment The second embodiment will be described. Below, elements with the same reference symbols as those in the first embodiment will have substantially the same configurations and functions as those described in the first embodiment unless otherwise specified, and differences from the first embodiment will be mainly described.

[0084] 7 is a schematic cross-sectional view of a portion of the configuration of a reduced-pressure drying apparatus according to the second embodiment. In the second embodiment, the cover 40 is a curved plate member. A plurality of flow paths 42 are defined in the cover 40, which is a plate member. Each flow path 42 is a through-hole that linearly penetrates the cover 40, which is a plate member, in the thickness direction.

[0085] Fig. 8 is a schematic cross-sectional view showing the positional relationship between three flow paths 421, 422, and 423 of the cover 40 of the second embodiment and the exhaust port 22 of the container 10. Of the multiple flow paths 42, three flow paths 421 to 423 that intersect with the imaginary plane PL1 are shown in Fig. 8. The flow paths 421 to 423 of the second embodiment are straight flow paths.

[0086] In the second embodiment, the channels 421 to 423 have different heights H1 to H3 and directions D1 to D3 from each other due to the curved cover 40. The relationship of the directions D1 to D3 and the relationship of the heights H1 to H3 are as described in the first embodiment.

[0087] Also in the second embodiment, similar to the first embodiment, an area A1 linearly extended from the channel end E2 to the space SP1 along the channel 421 and an area A2 linearly extended from the channel end E4 to the space SP1 along the channel 422 intersect. Further, an area A1 linearly extended from the channel end E2 to the space SP1 along the channel 421 and an area A3 linearly extended from the channel end E6 to the space SP1 along the channel 423 intersect.

[0088] As described above, according to the second embodiment, since the cover 40 is formed of a curved plate member, at least one of the directions D1 and D2 is inclined with respect to the direction D0 orthogonal to the main surface MS so that the downstream sides of the directions D1 and D2 approach each other, similar to the first embodiment. Thereby, the flow of the solvent vapor flowing out from the channel end E2 of the channel 421 and the flow of the solvent vapor flowing out from the channel end E4 of the channel 422 interfere with each other, and the difference in the flow rate of the solvent vapor flowing out from each channel 42 becomes small, and in the in-plane direction along the main surface MS, the difference in the drying rate of the solution film F becomes small. Therefore, the uniformity of the drying rate of the solution film F is improved, and the quality of the formed film is improved. Thus, even when the cover 40 is formed of a curved plate member, the same effect of improving the film quality as in the first embodiment is obtained.

[0089] <Third Embodiment> The third embodiment will be described. Hereinafter, elements denoted by the same reference numerals as those in the first embodiment have substantially the same configuration and operation as those described in the first embodiment unless otherwise specified, and the parts different from the first embodiment will be mainly described.

[0090] FIG. 9 is a schematic cross-sectional view of a partial configuration of the vacuum drying apparatus according to the third embodiment. In the third embodiment, the cover 40 has a plurality of plate members 401 laminated on each other in the Z direction. A plurality of flow paths 42 are defined in the cover 40. Each of the plurality of flow paths 42 is composed of through holes defined by at least two of the plurality of plate members 401.

[0091] FIG. 10 is a schematic cross-sectional view showing the positional relationship between the three flow paths 421, 422, and 423 of the cover 40 of the third embodiment and the exhaust port 22 of the container 10. In FIG. 10, three flow paths 421 to 423 that intersect the virtual plane PL1 are shown among the plurality of flow paths 42.

[0092] Also in the third embodiment, similar to the first embodiment, a region A1 linearly extending from the flow path end E2 to the space SP1 along the flow path 421 and a region A2 linearly extending from the flow path end E4 to the space SP1 along the flow path 422 intersect. Further, a region A1 linearly extending from the flow path end E2 to the space SP1 along the flow path 421 and a region A3 linearly extending from the flow path end E6 to the space SP1 along the flow path 423 intersect. Also in the flow paths 421 to 423 of the third embodiment, the directions D1 to D3 are different from each other. The relationship of the directions D1 to D3 is as described in the first embodiment.

[0093] In the third embodiment, in the direction D0, the height H1 of the flow path end E2 with respect to the main surface MS is the same as the height H2 of the flow path end E4 with respect to the main surface MS. Also, in the direction D0, the height H3 of the flow path end E6 with respect to the main surface MS is higher than the height H2 of the flow path end E4 with respect to the main surface MS. Also, in the direction D0, the height H3 of the flow path end E6 with respect to the main surface MS is higher than the height H1 of the flow path end E2 with respect to the main surface MS. That is, H1 = H2 < H3. Thus, H1 = H2 may be satisfied.

[0094] As described above, according to the third embodiment, similar to the first embodiment, at least one of the directions D1 and D2 is inclined with respect to the direction D0 perpendicular to the main surface MS so that the downstream side of the direction D1 and the downstream side of the direction D2 approach each other. This prevents the flow of solvent vapor flowing out from the flow channel end E2 of the flow channel 421 and the flow of solvent vapor flowing out from the flow channel end E4 of the flow channel 422 from each other, reducing the difference in flow rate of the solvent vapor flowing out of each flow channel 42 and reducing the difference in the drying speed of the solution film F in the in-plane direction along the main surface MS. This improves the uniformity of the drying speed of the solution film F and the quality of the formed film. Thus, even if the cover 40 is composed of multiple plate members 401, the effect of improving film quality is achieved, similar to the first embodiment.

[0095] Although the plate members 401 have been described as being flat plate members, the present invention is not limited to this and may be curved plate members.

[0096] <Fourth embodiment> The fourth embodiment will be described. In the following, elements with the same reference symbols as those in the first embodiment will have substantially the same configurations and functions as those described in the first embodiment unless otherwise specified, and differences from the first embodiment will be mainly described.

[0097] 12 is a schematic cross-sectional view showing the configuration of a reduced-pressure drying apparatus 100A, which is an example of a substrate processing apparatus according to the fourth embodiment. In the fourth embodiment, the cover unit 400 includes a cover 40, cylindrical members 411 and 412, and a partition plate 45.

[0098] Fig. 13(a) is a schematic plan view of a portion of the configuration of a reduced-pressure drying apparatus 100A according to the fourth embodiment. Fig. 13(b) is a schematic cross-sectional view of a portion of the configuration of a reduced-pressure drying apparatus 100A according to the fourth embodiment. Specifically, Fig. 13(a) is a view of the cover unit 400 and the members surrounding the cover unit 400 along the XY plane, viewed in the negative direction of the Z axis. Fig. 13(b) is a view of the cross section of the cover unit 400 and the members surrounding the cover unit 400 along the YZ plane, viewed in the negative direction of the X axis.

[0099] The cover 40 is provided with a plurality of openings 47A and a plurality of openings 47B. The openings 47A and 47B may be round or linear, such as slits. The cover 40 may be separate from or integrated with the cylindrical members 411 and 412. In the fourth embodiment, the cover 40 is integrated with the cylindrical members 411 and 412. The diameters of the plurality of openings 47A may be larger toward the center of the range in which the openings are provided and may be smaller toward the outside. The diameters of the plurality of openings 47B may be larger toward the center of the range in which the openings are provided and may be smaller toward the outside.

[0100] The main surface MS of the substrate S includes a first printing region R1, a non-printing region R0, and a second printing region R2. The second printing region R2 is separated from the first printing region R1 by the non-printing region R0. A first solution film FA is provided in the first printing region R1, and a second solution film FB is provided in the second printing region R2. The first solution film FA is an example of a first liquid, and the second solution film FB is an example of a second liquid. The first solution film FA and the second solution film FB are preferably the same type of liquid, but may be different types of liquid. The first solution film FA and the second solution film FB are provided spaced apart from each other in the Y direction. The first solution film FA faces a plurality of openings 47A. The second solution film FB faces a plurality of openings 47B.

[0101] The partition plate 45 is provided so as to extend from the cover 40 toward the space SP2 side. The partition plate 45 is provided so as to separate the solution film FA and the solution film FB in the space SP2.

[0102] The reduced-pressure drying apparatus 100A may further include a lifting mechanism 80, which is an example of an opening / closing mechanism capable of opening and closing the space SP2. The cover unit 400 can be moved in the Z direction, which is the up-down direction, relative to the substrate holding part 20 by the lifting mechanism 80 via a connecting member (not shown). The lifting mechanism 80 can be used when transporting the substrate S to and from the substrate holding part 20. For example, the lifting mechanism 80 can move the cover unit 400 between a closed position where the cover unit 400 is placed on the substrate holding part 20 and an open position where the cover unit 400 is separated from the substrate holding part 20.

[0103] The cylindrical member 411 surrounds the plurality of openings 47A when viewed from the negative direction of the Z axis, and is provided to extend from the cover 40 toward the space SP1. The cylindrical member 412 surrounds the plurality of openings 47B when viewed from the negative direction of the Z axis, and is provided to extend from the cover 40 toward the space SP1.

[0104] The cylindrical member 411 defines a first flow path 421. The first flow path 421 has a first flow path end E1 on the space SP2 side and a second flow path end E2 on the space SP1 side. The cylindrical member 412 defines a second flow path 422. The second flow path 422 has a third flow path end E3 on the space SP2 side and a fourth flow path end E4 on the space SP1 side. In FIG. 12, the second flow path end E2 is located at a higher position than the fourth flow path end E4 in the space SP1.

[0105] The cylindrical members 411 and 412 are cylindrical members with a rectangular, circular, or elliptical cross-section in the XY direction. The surface of the cylindrical member 411 facing the opening 47A and the surface of the cylindrical member 412 facing the opening 47B are not sealed and are open. In order to ensure a distance sufficient for the solvent vapor passing through the second flow path end E2 and the fourth flow path end E4 to diffuse sufficiently within the cylindrical members 411 and 412, it is preferably 50 mm or more in height.

[0106] In the present embodiment, the conductance of the first flow path 421 defined in the cylindrical member 411 close to the exhaust port 21 is smaller than the conductance of the second flow path 422 defined in the cylindrical member 412 far from the exhaust port 21. Thus, the flow path end E2 is provided at a position closer to the exhaust port 21 than the flow path end E4, and the flow path end E2 is provided at a position higher than the flow path end E4. Thereby, compared with the case where the conductance of the first flow path 421 defined in the cylindrical member 411 is the same as the conductance of the second flow path 422 defined in the cylindrical member 412 far from the exhaust port 21, the speed of the solvent vapor passing through the cylindrical member 411 and the speed of the solvent vapor passing through the cylindrical member 412 approach each other.

[0107] FIG. 14(a) is a schematic diagram of a part of the vacuum drying apparatus according to Comparative Example 2. FIG. 14(b) is a schematic diagram of a part of the vacuum drying apparatus 100A according to the fourth embodiment. The cover unit 400Y of Comparative Example 2 shown in FIG. 14(a) is obtained by omitting the cylindrical members 411 and 412 from the cover unit 400 of the fourth embodiment. In each of FIGS. 14(a) and 14(b), the state of exhaust of the solvent vapor evaporated from the solution film in the drying step D11 and the drying step D12 in FIG. 4 is schematically illustrated.

[0108] In Comparative Example 2 shown in FIG. 14(a), solvent vapor evaporated from solution films FA and FB passes through multiple openings 47A and 47B and is exhausted to exhaust port 21. The exhaust speed vector of the solvent vapor passing through multiple openings 47A and 47B is indicated by arrow D, and the larger the arrow, the faster the exhaust speed. Of the multiple openings 47A and 47B, the solvent vapor that passes through an opening closer to exhaust port 21 is more likely to be exhausted to exhaust port 21, and the solvent vapor that passes through an opening farther from exhaust port 21 is more likely to be exhausted to exhaust port 21. As a result, the difference in the time it takes for these solvent vapors to reach exhaust port 21 causes variations in the film shape.

[0109] 14(b), the solvent vapor that has passed through the plurality of openings 47A is sufficiently diffused in the first flow path 421, which is the internal space of the cylindrical member 411, before being exhausted to the exhaust port 21. On the other hand, the solvent vapor that has passed through the plurality of openings 47B has a short diffusion time and is exhausted to the exhaust port 21 because the height of the cylindrical member 412 is lower than that of the cylindrical member 411. The cylindrical members 411 and 412 are at different distances to the exhaust port 21, and as a result, the difference in the exhaust speed of the solvent vapor is small. As a result, the difference in the arrival time of the solvent vapor evaporated from each of the solution films FA and FB at the exhaust port 21 is small, and therefore, variations in the film shape are less likely to occur.

[0110] <Modification of the Fourth Embodiment> 15 is a schematic cross-sectional view showing the configuration of a reduced-pressure drying apparatus 100B, which is an example of a substrate processing apparatus according to a modified example of the fourth embodiment. The reduced-pressure drying apparatus 100B, which is a modified example of the fourth embodiment, is configured by adding a throttle section 48 to the second flow path end E2 of the cylindrical member 411 in order to shorten the time it takes for the solvent vapor passing through the cylindrical member 411 to reach the exhaust port 21 and the time it takes for the solvent vapor passing through the cylindrical member 412 to reach the exhaust port 21. That is, in a plan view, i.e., in the Z direction, the second flow path end E2 is smaller than the fourth flow path end E4. In this way, the cross-sectional area in the XY plane of the flow path 421 defined by the cylindrical member 411 may vary depending on the Z direction.

[0111] Fifth Embodiment 16 is a schematic cross-sectional view showing the configuration of a reduced-pressure drying apparatus 100C, which is an example of a substrate processing apparatus according to a fifth embodiment. In the reduced-pressure drying apparatus 100C of the fifth embodiment, components similar to those of the reduced-pressure drying apparatus 100 are designated by the same reference numerals, and detailed descriptions thereof will be omitted. The container 10 of the fifth embodiment has an exhaust port 21A and an exhaust port 21B disposed at a position facing the exhaust port 21A in the Y direction. In the fifth embodiment, the cover unit 400 includes a cover 40, cylindrical members 411, 412, 413, and a partition plate 45.

[0112] The cover 40 is provided with a plurality of openings 47A, a plurality of openings 47B, and a plurality of openings 47C. The openings 47A, 47B, and 47C may be round or linear, such as slits. The cover 40 may be separate from or integral with the cylindrical members 411, 412, and 413. In the fifth embodiment, the cover 40 is integral with the cylindrical members 411, 412, and 413. The diameters of the plurality of openings 47A may be larger toward the center of the range in which the openings are provided and may be smaller toward the outside. The diameters of the plurality of openings 47B may be larger toward the center of the range in which the openings are provided and may be smaller toward the outside. The diameters of the plurality of openings 47C may be larger toward the center of the range in which the openings are provided and may be smaller toward the outside.

[0113] The main surface MS of the substrate S includes a first printing region R1, a non-printing region R0, a second printing region R2, a non-printing region R10, and a third printing region R3. The second printing region R2 is separated from the first printing region R1 by the non-printing region R0. The third printing region R3 is separated from the second printing region R2 by the non-printing region R10. A first solution film FA is provided in the first printing region R1, a second solution film FB is provided in the second printing region R2, and a third solution film FC is provided in the third printing region R3. The first solution film FA is an example of a first liquid, the second solution film FB is an example of a second liquid, and the third solution film FC is an example of a third liquid. The first solution film FA, the second solution film FB, and the third solution film FC are preferably the same type of liquid, but may be different types of liquid. The first solution film FA, the second solution film FB, and the third solution film FC are provided spaced apart from each other in the Y direction. The first solution film FA faces the plurality of openings 47A, the second solution film FB faces the plurality of openings 47B, and the third solution film FC faces the plurality of openings 47C.

[0114] The partition plate 45 is provided to extend from the cover 40 toward the space SP2. The partition plate 45 is provided to separate the solution film FA from the solution film FB in the space SP2, and is also provided to separate the solution film FB from the solution film FC in the space SP2.

[0115] The cylindrical member 411 surrounds the plurality of openings 47A when viewed in the negative direction of the Z axis, and is provided to extend from the cover 40 toward the space SP1. The cylindrical member 412 surrounds the plurality of openings 47B when viewed in the negative direction of the Z axis, and is provided to extend from the cover 40 toward the space SP1. The cylindrical member 413 surrounds the plurality of openings 47C when viewed in the negative direction of the Z axis, and is provided to extend from the cover 40 toward the space SP1.

[0116] The cylindrical member 411 defines a first flow path 421. The first flow path 421 has a first flow path end E1 on the space SP2 side and a second flow path end E2 on the space SP1 side. The cylindrical member 412 defines a second flow path 422. The second flow path 422 has a third flow path end E3 on the space SP2 side and a fourth flow path end E4 on the space SP1 side. The cylindrical member 413 defines a third flow path 423. The third flow path 423 has a fifth flow path end E5 on the space SP2 side and a sixth flow path end E6 on the space SP1 side. In the space SP1 shown in FIG. 16, the second flow path end E2 and the sixth flow path end E6 are located higher than the fourth flow path end E4.

[0117] Cylindrical members 411, 412, and 413 are cylindrical members whose cross sections in the X and Y directions are rectangular, circular, or elliptical. The surface of cylindrical member 411 facing opening 47A, the surface of cylindrical member 412 facing opening 47B, and the surface of cylindrical member 413 facing opening 47C are all open and not sealed. To ensure a distance that allows solvent vapor passing through second flow path end E2, fourth flow path end E4, and sixth flow path end E6 to sufficiently diffuse within cylindrical members 411, 412, and 413, the heights of these members are preferably 50 mm or greater.

[0118] In this embodiment, the flow path ends E2 and E6 are located closer to the exhaust ports 21A and 21B than the flow path end E4, and are located higher than the flow path end E4, so that the conductance of the first flow path 421 defined in the tubular member 411 close to the exhaust port 21A and the conductance of the third flow path 423 defined in the tubular member 413 close to the exhaust port 21B are smaller than the conductance of the second flow path 422 defined in the tubular member 412 farther from the exhaust ports 21A and 21B. As a result, the speed of solvent vapor passing through tubular members 411 and 413 becomes closer to the speed of solvent vapor passing through tubular member 412 compared to when the conductance of first flow path 421 defined in tubular member 411 and the conductance of third flow path 423 defined in tubular member 413 are the same as the conductance of second flow path 422 defined in tubular member 412 farther from exhaust ports 21A and 21B.

[0119] Therefore, the solvent vapor that passes through the plurality of openings 47A and the plurality of openings 47C diffuses sufficiently in the first flow path 421, which is the internal space of the cylindrical member 411, and the third flow path 423, which is the internal space of the cylindrical member 413, before being exhausted to the exhaust ports 21A and 21B. On the other hand, the solvent vapor that passes through the plurality of openings 47B diffuses quickly because the height of the cylindrical member 412 is lower than that of the cylindrical members 411 and 413, and is then exhausted to the exhaust port 21A or the exhaust port 21B. Because the cylindrical members 411, 412, and 413 are at different distances to the exhaust ports 21A and 21B, the difference in the exhaust speed of the solvent vapor is reduced. As a result, the difference in the arrival time of the solvent vapor evaporated from each of the solution films FA, FB, and FC at the exhaust ports 21A and 21B is reduced, reducing the likelihood of variations in film shape.

[0120] <Embodiments of manufacturing methods of articles> The method for manufacturing an article according to an embodiment of the present disclosure is suitable for manufacturing an article such as an organic light-emitting diode (OLED) panel using an inkjet printing device. The method for manufacturing an article according to this embodiment includes a step (coating step) of depositing or applying a solution film (a solution containing a solute and a solvent for forming an organic film) on a substrate by a printing method using an inkjet printing device or the like to obtain a coated substrate. The method also includes a step (drying step) of drying the solution film on the coated substrate using the above-mentioned reduced-pressure drying device to obtain a dry substrate on which a dry film has been formed. Furthermore, this manufacturing method includes other well-known steps (such as baking, cooling, dehumidification, dry cleaning, electrode formation, and sealing film formation). The method for manufacturing an article according to this embodiment is advantageous over conventional methods in at least one of the performance, quality, productivity, and production cost of the article.

[0121] The present disclosure is not limited to the above-described embodiments, and many modifications of the embodiments are possible within the technical concept of the present disclosure. For example, at least two of the above-described embodiments and modifications may be combined. Furthermore, the effects described in the present embodiments are merely a list of the most preferable effects resulting from the embodiments of the present disclosure, and the effects of the embodiments of the present disclosure are not limited to those described in the present embodiments.

[0122] In the above-described embodiment, the case where the three flow paths 421 to 423 are adjacent to each other in the Y direction has been described as an example, but the present invention is not limited thereto. For example, another flow path may be arranged between the flow path 421 and the flow path 422. Further, another flow path may be arranged between the flow path 422 and the flow path 423.

[0123] In the above-described embodiment, the case where the flow path 421 is the flow path closest to the exhaust port 22 among the plurality of flow paths 42 has been described as an example, but the present invention is not limited thereto. For example, among the plurality of flow paths 42, the flow path 421 may be the second closest flow path to the exhaust port 22, or the third closest flow path. That is, as long as the three flow paths selected from among the plurality of flow paths 42 are the flow paths 421, 422, and 423.

[0124] In the above-described embodiment, the case where the exhaust port 22 is formed in the side wall of the container 10 has been described as an example, but the present invention is not limited thereto. For example, the exhaust port 22 may be formed in the top plate of the container 10. The same applies to the exhaust ports 23 to 24. Further, the number of exhaust ports is not limited to four.

[0125] In addition, although the case where the liquid disposed on the substrate S is a solution film has been described, the present invention is not limited thereto. For example, the liquid disposed on the substrate S may be a liquid that does not contain a solute, that is, a solvent.

[0126] The disclosure of the above embodiments includes the following items.

[0127] (Item 1) A container having an exhaust port and defining an internal space in which a substrate is disposed, A cover disposed inside the container so as to face the main surface of the substrate disposed inside the container, The cover is A first flow path that communicates a first space on the substrate side with respect to the cover and a second space on the side opposite to the substrate with respect to the cover, a second flow path located farther from the exhaust port than the first flow path and connecting the first space and the second space, the first flow path includes a first flow path end on the side of the first space and a second flow path end on the side of the second space, the second flow path includes a third flow path end on the side of the first space and a fourth flow path end on the side of the second space, A substrate processing apparatus characterized by:

[0128] (Section 2) a first region extending linearly from the second flow path end to the second space along the first flow path and a second region extending linearly from the fourth flow path end to the second space along the second flow path intersect; Item 1. A substrate processing apparatus according to item 1.

[0129] (Section 3) At least one of a first direction from the second flow path end toward the second space along the first flow path and a second direction from the fourth flow path end toward the second space along the second flow path is inclined with respect to a direction perpendicular to the main surface. 3. The substrate processing apparatus according to item 2,

[0130] (Section 4) At least one of the first direction and the second direction is inclined with respect to a direction perpendicular to the main surface so that a downstream side in a first direction from the second flow path end toward the second space along the first flow path and a downstream side in a second direction from the fourth flow path end toward the second space along the second flow path approach each other. Item 1. A substrate processing apparatus according to item 1.

[0131] (Section 5) The first direction is inclined with respect to a direction perpendicular to the main surface so that a downstream side of the first direction faces a direction away from the exhaust port. 5. The substrate processing apparatus according to item 3 or 4,

[0132] (Section 6) the first flow path includes a first partial flow path including the first flow path end and a second partial flow path including the second flow path end, the first direction is a direction along the second partial flow path; Item 6. The substrate processing apparatus according to item 5,

[0133] (Section 7) The second direction is inclined with respect to a direction perpendicular to the main surface so that the downstream side of the second direction faces a direction approaching the exhaust port. 7. The substrate processing apparatus according to any one of items 3 to 6,

[0134] (Section 8) the second flow path includes a third partial flow path including the third flow path end and a fourth partial flow path including the fourth flow path end, the second direction is a direction along the fourth partial flow path. 8. The substrate processing apparatus according to item 7,

[0135] (Section 9) In a direction perpendicular to the main surface, the height of the second flow path end relative to the main surface is higher than the height of the fourth flow path end relative to the main surface. 9. The substrate processing apparatus according to any one of items 2 to 8, characterized in that:

[0136] (Section 10) the cover has a third flow path located farther from the exhaust port than the second flow path and connecting the first space and the second space, the third flow path includes a fifth flow path end on the first space side and a sixth flow path end on the second space side; 10. The substrate processing apparatus according to any one of items 2 to 9, characterized in that:

[0137] (Section 11) a third direction extending from the sixth flow path end toward the second space along the third flow path is inclined with respect to a direction perpendicular to the main surface so that a downstream side of the third direction faces a direction approaching the exhaust port; The substrate processing apparatus according to claim 10, characterized in that...

[0138] (Claim 12) The third flow path includes a fifth partial flow path including the fifth flow path end and a sixth partial flow path including the sixth flow path end. The third direction is a direction along the sixth partial flow path. The substrate processing apparatus according to claim 11, characterized in that...

[0139] (Claim 13) In the direction perpendicular to the main surface, the height of the sixth flow path end with respect to the main surface is higher than the height of the fourth flow path end with respect to the main surface. The substrate processing apparatus according to any one of claims 10 to 12, characterized in that...

[0140] (Claim 14) In the direction perpendicular to the main surface, the height of the sixth flow path end with respect to the main surface is higher than the height of the second flow path end with respect to the main surface. The substrate processing apparatus according to any one of claims 10 to 13, characterized in that...

[0141] (Claim 15) A virtual plane that intersects the centers of the first flow path end and the third flow path end and is perpendicular to the main surface intersects the third flow path. The substrate processing apparatus according to any one of claims 10 to 14, characterized in that...

[0142] (Claim 16) The cover is a plate member, a first cylindrical member protruding from the plate member toward the second space, and a second cylindrical member protruding from the plate member toward the second space. The first flow path is defined by the plate member and the first cylindrical member. The second flow path is defined by the plate member and the second cylindrical member. The substrate processing apparatus according to any one of claims 1 to 15, characterized in that...

[0143] (Item 17) The cover includes a curved plate member, The first flow path and the second flow path are defined in the plate member, The substrate processing apparatus according to any one of Items 1 to 15, characterized in that.

[0144] (Item 18) The cover includes a plurality of laminated plate members, The first flow path and the second flow path are defined in the plurality of plate members, The substrate processing apparatus according to any one of Items 1 to 15, characterized in that.

[0145] (Item 19) The substrate has a first printing area where a first liquid is disposed, and a second printing area that is separated from the first printing area via a non-printing area and where a second liquid is disposed, The cover has a plurality of first openings disposed so as to face the first printing area, and a plurality of second openings disposed so as to face the second printing area, The first flow path is defined in a first cylindrical member surrounding the plurality of first openings, Compared with the first flow path and the second flow path, the first flow path is closer to the exhaust port than the second flow path, The second flow path is defined in a second cylindrical member surrounding the plurality of second openings, In the second space, the end of the second flow path is provided at a position higher than the end of the fourth flow path, The substrate processing apparatus according to Item 1, characterized in that.

[0146] (Item 20) The substrate has a first printing area where a first liquid is disposed, and a second printing area that is separated from the first printing area via a non-printing area and where a second liquid is disposed, The cover has a plurality of first openings disposed so as to face the first printing area, and a plurality of second openings disposed so as to face the second printing area, The first flow path is defined in a first cylindrical member surrounding the plurality of first openings, Comparing the first flow path and the second flow path, the first flow path is closer to the exhaust port than the second flow path. The second flow path is defined in a second cylindrical member surrounding the plurality of second openings. When viewed in plan view, the end of the second flow path is smaller than the end of the fourth flow path. The substrate processing apparatus according to claim 1 or 19, characterized in that.

[0147] (Item 21) A substrate processing method, comprising a step of drying a liquid disposed on the substrate using the substrate processing apparatus according to any one of claims 1 to 20.

[0148] (Item 22) A method for manufacturing an article, comprising a step of drying a liquid disposed on the substrate using the substrate processing apparatus according to any one of claims 1 to 20.

Explanation of reference numerals

[0149] A1... region (first region), A2... region (second region), D1... direction (first direction), D2... direction (second direction), E1... flow path end (first flow path end), E2... flow path end (second flow path end), E3... flow path end (third flow path end), E4... flow path end (fourth flow path end), MS... main surface, S... substrate, SP1... space (second space), SP2... space (first space), 10... container, 22... exhaust port, 40... cover, 100... vacuum drying apparatus (substrate processing apparatus), 421... flow path (first flow path), 422... flow path (second flow path)

Claims

1. A container having an exhaust port and defining an internal space in which a substrate is disposed, and a cover disposed inside the container so as to face a main surface of the substrate disposed inside the container, comprising: The cover is a first flow path that communicates a first space on the substrate side with respect to the cover and a second space on the side opposite to the substrate with respect to the cover; a second flow path that is located farther from the exhaust port than the first flow path and communicates the first space and the second space; The first flow path includes a first flow path end on the first space side and a second flow path end on the second space side, The second flow path includes a third flow path end on the first space side and a fourth flow path end on the second space side, A substrate processing apparatus, characterized in that.

2. A first region linearly extending from the second flow path end to the second space along the first flow path and a second region linearly extending from the fourth flow path end to the second space along the second flow path intersect; The substrate processing apparatus according to claim 1, characterized in that.

3. At least one of a first direction from the second flow path end toward the second space along the first flow path and a second direction from the fourth flow path end toward the second space along the second flow path is inclined with respect to a direction orthogonal to the main surface; The substrate processing apparatus according to claim 2, characterized in that.

4. At least one of the first direction and the second direction is inclined with respect to a direction orthogonal to the main surface such that the downstream sides of the first direction from the second flow path end toward the second space along the first flow path and the second direction from the fourth flow path end toward the second space along the second flow path face each other in a direction approaching each other; The substrate processing apparatus according to claim 1, characterized in that.

5. The first direction is inclined with respect to a direction orthogonal to the main surface such that the downstream side of the first direction moves away from the exhaust port; The substrate processing apparatus according to claim 3, characterized in that.

6. The first flow path includes a first partial flow path including the first flow path end and a second partial flow path including the second flow path end, The first direction is a direction along the second partial flow path, The substrate processing apparatus according to claim 5, characterized in that.

7. The second direction is inclined with respect to a direction orthogonal to the main surface such that the downstream side of the second direction approaches the exhaust port; The substrate processing apparatus according to claim 3, characterized in that.

8. The second flow path includes a third partial flow path including the third flow path end and a fourth partial flow path including the fourth flow path end, and the second direction is a direction along the fourth partial flow path. The substrate processing apparatus according to claim 7, characterized in that.

9. In a direction orthogonal to the main surface, the height of the second flow path end with respect to the main surface is higher than the height of the fourth flow path end with respect to the main surface. The substrate processing apparatus according to claim 2, characterized in that.

10. The cover is located farther from the exhaust port than the second flow path and has a third flow path that communicates the first space and the second space. The third flow path includes a fifth flow path end on the side of the first space and a sixth flow path end on the side of the second space. The substrate processing apparatus according to claim 2, characterized in that.

11. The third direction from the sixth flow path end toward the second space along the third flow path is inclined with respect to the direction orthogonal to the main surface such that the downstream side in the third direction faces the direction approaching the exhaust port. The substrate processing apparatus according to claim 10, characterized in that.

12. The third flow path includes a fifth partial flow path including the fifth flow path end and a sixth partial flow path including the sixth flow path end. The third direction is a direction along the sixth partial flow path. The substrate processing apparatus according to claim 11, characterized in that.

13. In a direction orthogonal to the main surface, the height of the sixth flow path end with respect to the main surface is higher than the height of the fourth flow path end with respect to the main surface. The substrate processing apparatus according to claim 10, characterized in that.

14. In a direction orthogonal to the main surface, the height of the sixth flow path end with respect to the main surface is higher than the height of the second flow path end with respect to the main surface. The substrate processing apparatus according to claim 10, characterized in that.

15. A virtual plane that intersects the center of the first flow path end and the center of the third flow path end and is orthogonal to the main surface intersects the third flow path. The substrate processing apparatus according to claim 10, characterized in that.

16. The cover includes a plate member, a first cylindrical member protruding from the plate member toward the second space side, and a second cylindrical member protruding from the plate member toward the second space side, and is provided with the first flow path is defined by the plate member and the first cylindrical member, and the second flow path is defined by the plate member and the second cylindrical member. The substrate processing apparatus according to claim 1, characterized in that.

17. The cover includes a curved plate member. The first flow path and the second flow path are defined in the plate member. The substrate processing apparatus according to claim 1, characterized in that.

18. The cover includes a plurality of laminated plate members. The first flow path and the second flow path are defined in the plurality of plate members. The substrate processing apparatus according to claim 1, characterized in that.

19. The substrate has a first printing area where a first liquid is disposed, and a second printing area that is separated from the first printing area via a non-printing area and where a second liquid is disposed. The cover has a plurality of first openings disposed to face the first printing area and a plurality of second openings disposed to face the second printing area. The first flow path is defined in a first cylindrical member surrounding the plurality of first openings. Compared with the first flow path and the second flow path, the first flow path is closer to the exhaust port than the second flow path. The second flow path is defined in a second cylindrical member surrounding the plurality of second openings. In the second space, the end of the second flow path is provided at a position higher than the end of the fourth flow path. The substrate processing apparatus according to claim 1, characterized in that.

20. The substrate has a first printing area where a first liquid is disposed, and a second printing area that is separated from the first printing area via a non-printing area and where a second liquid is disposed. The cover has a plurality of first openings disposed to face the first printing area and a plurality of second openings disposed to face the second printing area. The first flow path is defined in a first cylindrical member surrounding the plurality of first openings. Compared with the first flow path and the second flow path, the first flow path is closer to the exhaust port than the second flow path. The second flow path is defined in a second cylindrical member surrounding the plurality of second openings. When viewed in plan, the end of the second flow path is smaller than the end of the fourth flow path. The substrate processing apparatus according to claim 1, characterized in that.

21. A method for manufacturing an article, characterized by including a step of drying a liquid disposed on the substrate using the substrate processing apparatus according to any one of claims 1 to 20.

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