Semiconductor manufacturing apparatus and method of manufacturing semiconductor device

Abstract

To provide a semiconductor manufacturing apparatus capable of easily separating a semiconductor wafer from a stage.SOLUTION: A semiconductor manufacturing apparatus comprises a stage which includes a vacuum suction region that fixes a semiconductor wafer that has a protective part and is irradiated with laser light, and a hard-type non-adhesive material that is provided on a side in contact with the protective part of the semiconductor wafer, and on which the semiconductor wafer is placed so that the protective part is in contact. When the radius of the semiconductor wafer is d mm, the width of a foaming region being a region where the protective part foams is b mm, and the width of a deterioration region which is a region where the hard-type non-adhesive material deteriorates is c mm, the vacuum suction region is contained within a circle concentric with the semiconductor wafer, having a radius of {d-(b+c)} / d times the radius of the semiconductor wafer. Thus, the semiconductor wafer can be easily separated from the stage.SELECTED DRAWING: Figure 4

Description

[Technical Field]

[0001] The present disclosure relates to a semiconductor manufacturing apparatus for performing heat treatment and a method for manufacturing a semiconductor device. [Background technology]

[0002] Prior art discloses a stage having multiple suction ports opening on the top surface and multiple through holes extending from the top surface to the bottom surface, each of which houses a lift pin (for example, Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Publication No. 2023-034622 Summary of the Invention [Problem to be solved by the invention]

[0004] However, when a semiconductor wafer is placed on the stage and heat treatment is performed, the protective part in contact with the stage foams and sticks to the stage, making it difficult to remove the semiconductor wafer from the stage after heat treatment.

[0005] The present disclosure has been made to solve the above-mentioned problems, and has an object to provide a semiconductor manufacturing apparatus that can easily separate a semiconductor wafer from a stage. [Means for solving the problem]

[0006] The semiconductor manufacturing apparatus according to the present disclosure has a protective part, a vacuum suction area for fixing a semiconductor wafer to be irradiated with laser light, and a hard non-adhesive material provided on the side of the semiconductor wafer that comes into contact with the protective part, and is equipped with a stage on which the semiconductor wafer is placed so that the protective part comes into contact with the stage, and where the radius of the semiconductor wafer is d mm, the width of the foaming area where the protective part foams is b mm, and the width of the degradation area where the hard non-adhesive material deteriorates is cm mm, the vacuum suction area has a radius {d-(b+c)} / d times the radius of the semiconductor wafer and is contained within a circle that is centered on the semiconductor wafer.

[0007] Furthermore, the method for manufacturing a semiconductor device according to the present disclosure includes a protective portion forming step of forming a protective portion on a semiconductor wafer, a placing step of placing the semiconductor wafer on a stage having a hard non-adhesive material and a vacuum suction region contained within a circle having a radius {d-(b+c)} / d times the radius of the semiconductor wafer and a center concentric with that of the semiconductor wafer, where d mm is the radius of the semiconductor wafer, b mm is the width of the foamed region where the protective portion foams, and cm mm is the width of the deteriorated region where the hard non-adhesive material deteriorates, so that the protective portion is in contact with the hard non-adhesive material, a heat treatment step of performing heat treatment by irradiating the semiconductor wafer with laser light from the side opposite to the side in contact with the stage, and a lifting step of moving lift pins provided on the stage to separate the semiconductor wafer from the stage. [Effects of the Invention]

[0008] According to the semiconductor manufacturing apparatus of the present disclosure, the semiconductor wafer can be easily separated from the stage. Also, according to the semiconductor device manufacturing method of the present disclosure, the semiconductor wafer can be easily separated from the stage. [Brief explanation of the drawings]

[0009] [Figure 1] 1 is a top view of a semiconductor manufacturing apparatus according to a first embodiment of the present disclosure. [Figure 2] 1 is a cross-sectional view of a semiconductor manufacturing apparatus and a semiconductor wafer according to a first embodiment of the present disclosure. [Figure 3]1 is a cross-sectional view of a semiconductor manufacturing apparatus and a semiconductor wafer according to a first embodiment of the present disclosure. [Figure 4] 1 is a cross-sectional view of a semiconductor manufacturing apparatus and a semiconductor wafer according to a first embodiment of the present disclosure. [Figure 5] FIG. 2 is a diagram illustrating a vacuum suction region of the semiconductor manufacturing apparatus according to the first embodiment of the present disclosure. [Figure 6] FIG. 2 is a diagram illustrating a vacuum suction region of the semiconductor manufacturing apparatus according to the first embodiment of the present disclosure. [Figure 7] 1 is a configuration diagram of a semiconductor manufacturing apparatus according to a first embodiment of the present disclosure. [Figure 8] 2A to 2C are diagrams illustrating a method for manufacturing a semiconductor device according to a first embodiment of the present disclosure. DETAILED DESCRIPTION OF THE INVENTION

[0010] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. Note that the drawings are schematic, and the relative sizes and positions shown in different drawings are not necessarily limited to those described and may be changed as appropriate. In the following description, similar components are denoted by the same reference numerals, and their names and functions are assumed to be the same or similar. Therefore, detailed descriptions thereof may be omitted.

[0011] Embodiment 1 A semiconductor manufacturing apparatus 101 according to the first embodiment will be described with reference to Figures 1 to 7. Figure 1 is a top view of the semiconductor manufacturing apparatus 101 according to the first embodiment.

[0012] As shown in FIG. 1, semiconductor manufacturing apparatus 101 according to this embodiment includes a stage 1 and lift pins 2. A semiconductor wafer, which will be described later, is placed on the upper surface of stage 1. With stage 1 as a reference, the side on which the semiconductor wafer is placed is referred to as the upper surface. In FIG. 1, the front side of the paper is the upper surface. A surface different from the upper surface, i.e., the side opposite the upper surface, is referred to as the lower surface. The direction penetrating the upper and lower surfaces is referred to as the thickness direction. Surfaces other than the upper and lower surfaces are referred to as side surfaces. The same applies to the following explanations.

[0013] The stage 1 includes a suction hole 3, a through-hole 4, and an end portion 5. A semiconductor wafer, which will be described later, is placed on the stage 1. The stage 1 is, for example, circular. The stage 1 does not have to be circular, and may be, for example, rectangular or a polygonal shape other than a rectangular. The stage 1 may also be elliptical or may have a shape combining a plurality of curves and straight lines. The stage 1 is made of, for example, quartz. The stage 1 may also be made of glass.

[0014] The stage 1 includes suction holes 3. The suction holes 3 are provided, for example, in the center of the stage 1. The suction holes 3 are holes opened in the top surface of the stage 1. For example, a plurality of suction holes 3 are provided. For example, the plurality of suction holes 3 are arranged circumferentially. For example, the circumference on which the plurality of suction holes 3 are provided has the center of the stage 1 as its center. For example, the suction holes 3 are arranged side by side on the circumference of a plurality of concentric circles. Note that the suction holes 3 do not have to be arranged side by side on the circumference.

[0015] The area where the semiconductor wafer 6 is sucked and fixed to the stage 1 is referred to as the vacuum suction area. Inside the vacuum suction area, suction holes 3 for fixing the semiconductor wafer 6 to the stage 1 are provided. The vacuum suction area is, for example, the inside of a circle that has the same center as the stage 1. In FIG. 1, the vacuum suction area is shown as the inside of circle A. Note that the vacuum suction area does not have to be circular.

[0016] The stage 1 includes a through-hole 4. The through-hole 4 is provided, for example, in the center of the stage 1. For example, a plurality of through-holes 4 are provided. For example, four through-holes 4 are provided. The plurality of through-holes 4 are arranged, for example, on a circumference. For example, the through-hole 4 is provided closer to the end 5 of the stage 1 than the central suction hole 3 among the plurality of suction holes 3 provided in the stage 1.

[0017] The semiconductor manufacturing apparatus 101 includes lift pins 2. The lift pins 2 are provided, for example, in the center of the stage 1. For example, a plurality of lift pins 2 are provided. For example, four lift pins 2 are provided. The lift pins 2 are housed in each of the through holes 4. The lift pins 2 move up and down within the through holes 4. That is, the lift pins 2 move in the thickness direction within the through holes 4. The lift pins 2 are connected, for example, to a drive unit (not shown), and move up and down within the through holes 4.

[0018] 2 is a cross-sectional view of semiconductor manufacturing apparatus 101 and semiconductor wafer 6 according to embodiment 1. As shown in Fig. 2, semiconductor wafer 6 is placed on the upper surface of stage 1. In Fig. 2, the upper side of the paper is the upper surface, and the lower side of the paper is the lower surface.

[0019] The semiconductor wafer 6 includes a protective portion 7. The protective portion 7 is provided on the underside of the semiconductor wafer 6. The semiconductor wafer 6 is placed on the upper surface of the stage 1 with the protective portion 7 provided on its underside. The protective portion 7 contacts the stage 1. The semiconductor wafer 6 is placed on the stage 1 so that the protective portion 7 contacts the stage 1.

[0020] The protective portion 7 protects the semiconductor wafer 6. The protective portion 7 also insulates the semiconductor wafer 6 from the stage 1. The protective portion 7 is formed of, for example, resin. Note that the protective portion 7 may be formed of a material other than resin as long as it has insulating properties. For example, the protective portion 7 may be heat-resistant tape or the like having insulating properties.

[0021] As shown in FIG. 2, the stage 1 includes a hard non-adhesive material 8. The hard non-adhesive material 8 is provided on the upper surface of the stage 1. The hard non-adhesive material 8 is provided on the side of the semiconductor wafer 6 that comes into contact with the protective portion 7. The hard non-adhesive material 8 is provided over the entire upper surface of the stage 1. Note that the hard non-adhesive material 8 may be provided only on the upper surface of the stage 1, particularly on the side closer to the edge 5 of the stage 1 than the vacuum suction area.

[0022] The hard non-adhesive material 8 is applied to the stage 1, for example. The hard non-adhesive material 8 is made of, for example, a material containing silicon and oxygen. The hard non-adhesive material 8 is mainly composed of silicon and oxygen, for example. Note that the hard non-adhesive material 8 may contain elements other than silicon and oxygen.

[0023] The suction holes 3 include, for example, one opening 31 and the other opening 32. One opening 31 is provided in the upper surface of the stage 1. The other opening 32 is provided in the lower surface of the stage 1. As shown in FIG. 2 , the suction holes 3 are provided, for example, so as to penetrate from the upper surface to the lower surface of the stage 1. Note that the suction holes 3 may be provided so as to connect with other suction holes 3 inside the stage 1. That is, a plurality of one openings 31 may be provided, and the number of the other openings 32 may be smaller than that of the one opening. The other openings 32 may be provided on a side surface of the stage 1, or in an area of the upper surface of the stage 1 on which the semiconductor wafer 6 is not placed.

[0024] One opening 31 of the suction hole 3 is provided so as to contact the protective portion 7 of the semiconductor wafer 6. The other opening 32 of the suction hole 3 is connected to, for example, a vacuum pump (not shown). When the vacuum pump is driven, air is removed from the suction hole 3, and the semiconductor wafer 6 is sucked onto the stage 1. That is, by providing the suction hole 3 and removing the air from inside the suction hole 3, the stage 1 can hold the semiconductor wafer 6. That is, the semiconductor manufacturing apparatus 101 has a vacuum suction area, so that the semiconductor wafer 6 can be fixed to the stage 1.

[0025] The through holes 4 are holes that penetrate the stage 1 from the top surface to the bottom surface. Lift pins 2 are housed in the through holes 4. The lift pins 2 are provided so as to penetrate the stage 1 from the top surface to the bottom surface. The lift pins 2 are provided to be housed in the through holes 4. The lift pins 2 are connected, for example, to a drive device (not shown) on the bottom surface side. The lift pins 2 can be moved up and down by the drive device.

[0026] 3 is a side view of semiconductor manufacturing apparatus 101 and semiconductor wafer 6 according to embodiment 1. Fig. 3 shows a state in which lift pins 2 are moved upward from the state shown in Fig. 2.

[0027] By moving the lift pins 2 upward, the semiconductor manufacturing equipment 101 lifts the semiconductor wafer 6 That is, by moving the lift pins 2 upward, the semiconductor manufacturing apparatus 101 can move the semiconductor wafer 6 away from the stage 1. That is, the lift pins 2 move the semiconductor wafer 6 in a direction away from the stage 1.

[0028] FIG. 4 is a cross-sectional view of semiconductor manufacturing apparatus 101 and semiconductor wafer 6 according to embodiment 1. FIG. 4 shows a portion of stage 1 and semiconductor wafer 6. O shown in FIG. 4 is the center of semiconductor wafer 6. FIG. 4 is a diagram showing a cross section including center O of semiconductor wafer 6. FIG. 4 shows the stage 1 from its center to edge 5. The region where semiconductor wafer 6 is attracted to stage 1 is the vacuum suction region. It is preferable that the center of stage 1 and the center of semiconductor wafer 6 coincide with each other.

[0029] The arrows in FIG. 4 schematically indicate the direction in which laser light emitted from a laser device, which will be described later, is irradiated. The laser light is irradiated from the top surface of the semiconductor wafer 6. That is, the laser light is irradiated from the side opposite to the side where the semiconductor wafer 6 contacts the stage 1. The laser light is also irradiated from the side opposite to the side where the protective portion 7 of the semiconductor wafer 6 is provided. The laser light is irradiated onto the entire top surface of the semiconductor wafer 6. The semiconductor wafer 6 is heat-treated by being irradiated with the laser light. That is, the semiconductor wafer 6 is laser-annealed.

[0030] The bubble forming region B is a region where there is a high possibility that the protective portion 7 of the semiconductor wafer 6 will bubble. When the laser annealing process is performed, the temperature of the semiconductor wafer 6 reaches approximately 1200°C. When the temperature of the semiconductor wafer 6 reaches approximately 1200°C, there is a possibility that the protective portion 7 will bubble. Furthermore, if the temperature of the semiconductor wafer 6 is higher than approximately 1200°C, there is an even higher possibility that the protective portion 7 will bubble.

[0031] Furthermore, even when the temperature of the semiconductor wafer 6 is less than about 1200°C, if the size of the semiconductor wafer 6 in the thickness direction is small, heat is easily transferred to the protective portion 7, and there is a high possibility that the protective portion 7 will foam. The smaller the size of the semiconductor wafer 6 in the thickness direction, the more likely foaming will occur in the protective portion 7. For example, when the size of the semiconductor wafer 6 in the thickness direction is 60 μm or less, foaming of the protective portion 7 is more likely to occur.

[0032] Furthermore, if the laser light intensity is such that the temperature of the semiconductor wafer 6 rises to approximately 1200°C, there is a possibility that bubbles will form in the protective portion 7. Furthermore, since the temperature of the semiconductor wafer 6 during laser annealing tends to rise as the laser light intensity increases, if the laser light intensity is greater than the intensity that would raise the temperature of the semiconductor wafer 6 to approximately 1200°C, there is an even greater possibility that bubbles will form in the protective portion 7.

[0033] In the vacuum suction region, the stage 1 and the semiconductor wafer 6 are in close contact with each other. In addition, for example, a cooling device (not shown) is provided on the underside of the stage 1. Therefore, since the stage 1 and the semiconductor wafer 6 are in close contact with each other in the vacuum suction region, the semiconductor wafer 6 is easily cooled.

[0034] On the other hand, around the vacuum suction area, the stage 1 and the semiconductor wafer 6 are not in close contact with each other, making it difficult to cool the semiconductor wafer 6. Also, around the vacuum suction area, the stage 1 and the semiconductor wafer 6 are close to each other, making it easy for heat to build up between the stage 1 and the semiconductor wafer 6. Therefore, foaming of the protective part 7 is particularly likely to occur around the vacuum suction area. The area where foaming of the protective part 7 is particularly likely to occur is the foaming area B.

[0035] When the protective part 7 foams, the protective part 7 tends to stick to the stage 1. When the foamed protective part 7 sticks to the stage 1, it becomes difficult to separate the semiconductor wafer 6 from the stage 1. In the past, when the semiconductor wafer stuck to the stage, the semiconductor wafer would not separate from the stage when being separated from the stage after heat treatment, and instead only a portion of the semiconductor wafer would separate from the stage, causing a "lopsided" state, which could result in damage to the semiconductor wafer.

[0036] Furthermore, if the semiconductor wafer sticks to the stage, when the semiconductor wafer is removed from the stage after heat treatment, the semiconductor wafer does not separate from the stage, resulting in a one-sided lift in which only a portion of the semiconductor wafer separates from the stage. This can prevent the semiconductor wafer from being properly handed over to the transport device that transports the semiconductor wafer, which can cause the transport device to stop.

[0037] The hard non-adhesive material 8 can reduce the possibility of the semiconductor wafer 6 sticking to the stage 1 when the protective part 7 foams. In other words, by providing the hard non-adhesive material 8, the semiconductor manufacturing apparatus 101 can reduce the possibility of the semiconductor wafer 6 sticking to the stage 1, thereby reducing the possibility of the semiconductor wafer 6 being damaged and the possibility of the transport device being stopped. By providing the hard non-adhesive material 8 particularly around the vacuum suction area of the protective part 7 where foaming is likely to occur, the semiconductor manufacturing apparatus 101 can further reduce the possibility of the semiconductor wafer 6 sticking to the stage 1 when the protective part 7 foams.

[0038] The deterioration area C is an area where the hard non-adhesive material 8 provided on the stage 1 is likely to deteriorate. The hard non-adhesive material 8 is susceptible to heat, and therefore may be deteriorated by heat treatment. In other words, the non-adhesive properties may be reduced. In particular, the area near the end 5 of the stage 1 is more likely to be exposed to laser light, and therefore the hard non-adhesive material 8 is more likely to deteriorate.

[0039] If the hard non-adhesive material 8 deteriorates or the protective portion 7 foams, the effect of reducing the sticking of the semiconductor wafer 6 to the stage 1 decreases, and the possibility of the semiconductor wafer 6 sticking to the stage 1 increases.

[0040] 4, in the semiconductor manufacturing apparatus 101 of this embodiment, the foaming region B is provided in an area that does not overlap with the deterioration region C. Since the foaming region B does not overlap with the deterioration region C, foaming of the protective portion 7 does not occur in the deterioration region C, and the possibility of the semiconductor wafer 6 sticking to the stage 1 can be reduced. In other words, the semiconductor wafer 6 can be easily separated from the stage 1. This reduces the possibility of the semiconductor wafer 6 being damaged and the possibility of the transfer device being stopped.

[0041] 5 is a diagram illustrating the vacuum suction region of semiconductor manufacturing apparatus 101 according to embodiment 1. FIG. 5 schematically shows the surface where stage 1 and semiconductor wafer 6 come into contact. In FIG. 5, circles A, D, E, and F are concentric circles with center O. The radius of circle A is a, the radius of circle D is d, the radius of circle E is e, and the radius of circle F is f. The vacuum suction region is defined as the inside of circle A. The direction toward center O is defined as the inside, and the direction away from center O is defined as the outside.

[0042] Foaming region B occurs around the vacuum suction region. Foaming region B occurs in a region approximately 20 mm from the vacuum suction region. The width of foaming region B where foaming of protective section 7 occurs is designated as b. In FIG. 5, the vacuum suction region is inside circle A, so foaming region B is the region surrounded by the line indicating the circumference of circle E, which has a radius b larger than circle A, and the line indicating the circumference of circle A. Foaming region B is, for example, a circular region that occurs outside the vacuum suction region.

[0043] Degradation area C occurs in a portion extending approximately 20 mm inward from the outer periphery of semiconductor wafer 6. The width of degradation area C, where degradation of hard non-adhesive material 8 occurs, is defined as c. If semiconductor wafer 6 is a circle with radius d that overlaps circle D, in FIG. 5 , degradation area C is the area surrounded by the line indicating the circumference of circle F, which is a circle with a radius c smaller than circle D, and the line indicating the circumference of circle D. Degradation area C is, for example, an annular area that occurs inside the outer periphery of semiconductor wafer 6.

[0044] Because foaming of the protective portion 7 is likely to occur around the vacuum suction area, the foaming area B is determined by the vacuum suction area. In other words, if the position of the vacuum suction area changes, the position of the foaming area B also changes. In other words, the position of the vacuum suction area can be adjusted by adjusting the position of the vacuum suction area. If the vacuum suction area is small relative to the semiconductor wafer 6, as shown in FIG. 5, the foaming area B and the deterioration area C do not overlap, so foaming of the protective portion 7 does not occur in the deterioration area C, reducing the possibility of the semiconductor wafer 6 sticking to the stage 1. In other words, the semiconductor wafer 6 can be easily separated from the stage 1. This reduces the possibility of the semiconductor wafer 6 being damaged and the transfer device being stopped.

[0045] Fig. 6 is a diagram illustrating the vacuum suction region of semiconductor manufacturing apparatus 101 according to embodiment 1. Fig. 6 schematically shows the surface where stage 1 and semiconductor wafer 6 come into contact. In Fig. 6, circles D, F, and G are concentric circles with center O. Also, the radius of circle D is d, the radius of circle F is f, and the radius of circle G is g.

[0046] The hard non-adhesive material 8 deteriorates in a deterioration region C of width c from the outer periphery toward the inside of the semiconductor wafer 6. In other words, the deterioration region C is an area surrounded by a line indicating the circumference of a circle F, which has a radius smaller than that of the circle D by c, and a line indicating the circumference of the circle D.

[0047] Protective portion 7 foams from the outer periphery of the vacuum suction area outward in foaming area B with width b. If foaming area B is generated just inside deterioration area C, foaming area B will be the area surrounded by the line indicating the circumference of circle F and the line indicating the circumference of circle G, which has a radius smaller than circle F by b.

[0048] To prevent the bubble region B and the deterioration region C from overlapping, the vacuum suction region should be contained within a circle G with a radius g = {d - (b + c)}. That is, the vacuum suction region should be contained within a circle whose radius is {d - (b + c)} / d times the radius of the semiconductor wafer 6 and whose center is the same as that of the semiconductor wafer 6. The vacuum suction region should have an area sufficient to fix the semiconductor wafer 6 to the stage 1. That is, the vacuum suction region should have a radius that is {d - (b + c)} / d times the radius of the semiconductor wafer 6 and an area large enough to fix the semiconductor wafer 6 to the stage 1.

[0049] In this embodiment, semiconductor wafers of any size can be used. For example, when a 12-inch semiconductor wafer is used, assuming d = 150 mm, b = 20 mm, and c = 20 mm, the vacuum suction area should be contained within a circle whose radius is 11 / 15 times the radius of the semiconductor wafer and whose center is the same as the semiconductor wafer.

[0050] Furthermore, when an 8-inch semiconductor wafer is used, assuming d = 100 mm, b = 20 mm, and c = 20 mm, the vacuum suction area should be contained within a circle whose radius is 3 / 5 times the radius of the semiconductor wafer and whose center is the same as the semiconductor wafer.

[0051] Furthermore, when using a 6-inch semiconductor wafer, assuming d = 75 mm, b = 20 mm, and c = 20 mm, the vacuum suction area should be contained within a circle that has a radius 7 / 15 times the radius of the semiconductor wafer and is centered on the semiconductor wafer.

[0052] By placing the vacuum suction region within a circle whose radius is {d-(b+c)} / d times the radius of the semiconductor wafer 6 and whose center is the same as that of the semiconductor wafer 6, the bubble region B can be brought closer to the center of the stage 1, and therefore the bubble region B and the deterioration region C can be prevented from overlapping. In other words, bubble formation in the protective portion 7 can be prevented in the deterioration region C. This reduces the possibility that the semiconductor wafer 6 will stick to the stage 1, and the semiconductor wafer 6 can be easily separated from the stage 1. This reduces the possibility that the semiconductor wafer 6 will be damaged and that the transport device will stop.

[0053] Furthermore, by placing the vacuum suction region within a circle having a radius {d-(b+c)} / d times the radius of the semiconductor wafer 6 and having the same center as the semiconductor wafer 6, the foaming region B can be brought closer to the center of the stage 1. Therefore, even if the semiconductor wafer 6 were to stick to the stage 1 in the foaming region B, the foaming region B will occur near the lift pins 2 provided in the center of the stage 1, making it easy to separate the semiconductor wafer 6 from the stage 1.

[0054] 7 is a configuration diagram of semiconductor manufacturing apparatus 101 according to embodiment 1. Semiconductor manufacturing apparatus 101 includes a stage 1 and a laser device. The laser device includes a first laser oscillator 51, a second laser oscillator 52, a splitter 53, a first measuring member 54, a chamber 55, a profiler 56, a photodirector 57, a mirror 61, a mirror 62, a mirror 63, a mirror 64, a mirror 65, and a mirror 66.

[0055] The first laser oscillator 51 and the second laser oscillator 52 output laser light. The laser light output from the first laser oscillator 51 is reflected by mirrors 61 and 62 and reaches the splitter 53. The laser light output from the second laser oscillator 52 is reflected by mirrors 63 and 64 and reaches the splitter 53. The splitter 53 superimposes the laser light output from the first laser oscillator 51 and the laser light output from the second laser oscillator 52. The splitter 53 also splits the superimposed laser light into two directions.

[0056] The laser light superimposed by splitter 53 is split into two directions by splitter 53. One of the split laser lights reaches first measurement member 54. The other of the split laser lights reaches mirror 65 and is further split into two directions.

[0057] One of the laser beams split into two directions by mirror 65 reaches chamber 55. Stage 1 is provided inside chamber 55. A semiconductor wafer 6 is placed on the top surface of stage 1. The laser beam that has reached chamber 55 is irradiated onto semiconductor wafer 6 provided on the top surface of stage 1.

[0058] The other of the laser beams split into two directions by mirror 65 is further split into two directions by mirror 66. One of the laser beams split into two directions by mirror 66 reaches profiler 56, which is the second measurement member. The other of the laser beams split into two directions by mirror 66 reaches photodirector 57.

[0059] The first laser oscillator 51 and the second laser oscillator 52 output pulsed laser beams with a time difference. The first laser oscillator 51 and the second laser oscillator 52 output pulsed laser beams with a wavelength of, for example, 300 to 600 nm. The pulsed laser beams output from the first laser oscillator 51 and the second laser oscillator 52 are, for example, second harmonics of an Nd:YLF laser with a wavelength of 572 nm. The number of laser oscillators does not have to be two. Only one laser oscillator may be provided, or three or more laser oscillators may be provided.

[0060] Next, a method for manufacturing a semiconductor device will be described. Fig. 8 is a flowchart showing the method for manufacturing a semiconductor device according to the first embodiment. First, a semiconductor element forming step (ST1) is performed in which semiconductor elements are formed on a semiconductor wafer 6. In the semiconductor element forming step, an ion implantation step is performed in which impurity ions are implanted from the surface that will become the upper or lower surface of the semiconductor wafer 6. The semiconductor elements formed on the semiconductor wafer 6 are power semiconductors. Power semiconductors are, for example, diode elements, switching elements, etc.

[0061] For example, silicon can be used to form the semiconductor wafer 6. Alternatively, wide bandgap semiconductors having a wider bandgap than silicon, such as silicon, silicon carbide, a material containing gallium nitride, a material containing gallium oxide, and diamond, can also be used to form the semiconductor wafer 6.

[0062] Next, a protective portion forming step (ST2) is performed to form a protective portion 7 on the surface of the semiconductor wafer 6 in order to protect the surface of the semiconductor wafer 6. The protective portion 7 is formed of, for example, resin. Note that the protective portion 7 may be formed of a material other than resin as long as it has insulating properties.

[0063] Next, a placing step (ST3) is performed in which the semiconductor wafer 6 is placed on the upper surface of the stage 1 of the semiconductor manufacturing equipment 101. When placing the semiconductor wafer 6 on the upper surface of the stage 1, the semiconductor wafer 6 is placed on the stage 1 so that the protective portion 7 of the semiconductor wafer 6 faces the stage 1 side.

[0064] Next, a heat treatment step (ST3) is performed in which the semiconductor wafer 6 is irradiated with laser light output from a laser device of the semiconductor manufacturing equipment 101. The heat treatment performed in ST3 is, in particular, a laser annealing process. In the heat treatment step, the impurity ions implanted in the semiconductor wafer 6 are activated.

[0065] The heat treatment step needs to be performed at high power. High power is, for example, 1 W or more. Performing heat treatment at high power increases the possibility of bubbles forming in the protective portion 7, but by using the semiconductor manufacturing apparatus 101 according to this embodiment, it is possible to prevent the semiconductor wafer 6 from sticking to the stage 1. By preventing the semiconductor wafer 6 from sticking to the stage 1, it becomes easier to separate the semiconductor wafer 6 from the stage 1, and the productivity of semiconductor devices is improved.

[0066] In addition, when the semiconductor wafer 6 formed of a wide band gap semiconductor such as SiC is heat-treated, the laser annealing is performed at a higher temperature than that of silicon. The temperature of the semiconductor wafer 6 reaches approximately 1200°C. When the temperature of the semiconductor wafer 6 reaches approximately 1200°C, there is a possibility that the protective portion 7 will foam, but by using the semiconductor manufacturing apparatus 101 according to this embodiment, it is possible to prevent the semiconductor wafer 6 from sticking to the stage 1. By preventing the semiconductor wafer 6 from sticking to the stage 1, it becomes easier to separate the semiconductor wafer 6 from the stage 1, and the productivity of the semiconductor device is improved.

[0067] In the heat treatment step (ST3), the laser beam can be irradiated onto the semiconductor wafer 6 at an angle smaller than 90°. By irradiating the semiconductor wafer 6 with the laser beam at an angle smaller than 90°, it is possible to prevent the laser device from being damaged by the laser beam reflected by the semiconductor wafer 6. Irradiating the semiconductor wafer 6 at an angle smaller than 90° means, for example, irradiating the semiconductor wafer 6 with the laser beam at an angle of about 80 to 89°. In other words, the laser beam is irradiated onto the semiconductor wafer 6 while tilted by about 1 to 10°.

[0068] Furthermore, in the heat treatment step (ST3), the laser light can be irradiated perpendicularly to the semiconductor wafer 6. By irradiating the semiconductor wafer 6 with the laser light perpendicularly, it is possible to prevent the laser light from being directly irradiated onto the hard non-adhesive material 8 of the stage 1. This makes it possible to prevent the hard non-adhesive material 8 from deteriorating. This makes it possible to prevent the semiconductor wafer 6 from sticking to the stage 1, making it easier to separate the semiconductor wafer 6 from the stage 1. Note that irradiating the semiconductor wafer 6 perpendicularly does not have to be at an angle of exactly 90° to the semiconductor wafer 6, as long as the angle is such that deterioration of the hard non-adhesive material 8 can be prevented.

[0069] The surface of the stage 1 that contacts the semiconductor wafer 6 may be smaller than the surface of the semiconductor wafer 6 that contacts the stage 1. By making the surface of the stage 1 that contacts the semiconductor wafer 6 smaller than the surface of the semiconductor wafer 6 that contacts the stage 1, it is possible to prevent the hard non-adhesive material 8 from being directly irradiated with laser light. This makes it possible to prevent deterioration of the hard non-adhesive material 8. This makes it possible to prevent the semiconductor wafer 6 from sticking to the stage 1, making it easier to separate the semiconductor wafer 6 from the stage 1.

[0070] Next, a lift step (ST4) is performed in which the lift pins 2 are raised from the lower surface side to the upper surface side of the stage 1 to separate the semiconductor wafer 6 from the stage 1. In the lift step (ST4), the semiconductor manufacturing equipment 101 can lift the semiconductor wafer 6 all at once.

[0071] Furthermore, in the lift step (ST4), the semiconductor manufacturing apparatus 101 can raise the lift pins 2 in stages over multiple steps. For example, the semiconductor manufacturing apparatus 101 can raise the lift pins 2 by 0.5 mm, stop the raising for 5 seconds, and then raise the lift pins 2 by 0.5 mm again after stopping the raising for 5 seconds. The raising and stopping of the lift pins 2 can be repeated any number of times. By raising the lift pins 2 in stages over multiple steps, even if the semiconductor wafer 6 sticks to the stage 1, the semiconductor wafer 6 can be gradually peeled off from the stage 1. This makes it possible to prevent damage to the semiconductor wafer 6.

[0072] Furthermore, the semiconductor manufacturing apparatus 101 can slow down the speed at which the lift pins 2 rise compared to conventional techniques. By slowing down the speed at which the lift pins 2 rise compared to conventional techniques, even if the semiconductor wafer 6 sticks to the stage 1, the semiconductor wafer 6 can be gradually peeled off from the stage 1. Therefore, damage to the semiconductor wafer 6 can be suppressed.

[0073] The semiconductor manufacturing apparatus 101 according to this embodiment has a protective part 7, a vacuum suction area for fixing the semiconductor wafer 6 to be irradiated with laser light, and a hard non-adhesive material 8 provided on the side of the semiconductor wafer 6 that comes into contact with the protective part 7, and is equipped with a stage 1 on which the semiconductor wafer 6 is placed so that the protective part 7 comes into contact. When the radius of the semiconductor wafer 6 is d mm, the width of the foaming area B where the protective part 7 foams is b mm, and the width of the degradation area C where the hard non-adhesive material 8 deteriorates is cmm, the vacuum suction area has a radius {d-(b+c)} / d times the radius of the semiconductor wafer 6 and is contained within a circle that is centered on the semiconductor wafer 6, and the semiconductor wafer 6 can be easily separated from the stage 1.

[0074] Furthermore, the method for manufacturing a semiconductor device according to this embodiment includes a protective portion forming step of forming a protective portion 7 on the semiconductor wafer 6, a placing step of placing the semiconductor wafer 6 on a stage having a hard non-adhesive material 8 and a vacuum suction region contained within a circle having a radius {d-(b+c)} / d times the radius of the semiconductor wafer 6 and a center concentric with that of the semiconductor wafer 6, where d mm is the radius of the semiconductor wafer 6, b mm is the width of a foaming region B where the protective portion 7 foams, and cm mm is the width of a degradation region C where the hard non-adhesive material 8 deteriorates, so that the protective portion 7 is in contact with the hard non-adhesive material 8, a heat treatment step of performing heat treatment by irradiating the semiconductor wafer 6 with laser light from the side opposite to the side in contact with the stage 1, and a lifting step of moving lift pins 2 provided on the stage 1 to separate the semiconductor wafer 6 from the stage 1, thereby making it possible to easily separate the semiconductor wafer 6 from the stage 1.

[0075] In the above-described embodiments, the materials, materials, dimensions, shapes, relative positions, and implementation conditions of each component may be described. However, these are merely examples in all respects and are not intended to limit the scope of each embodiment. Therefore, countless variations not exemplified are contemplated within the scope of each embodiment. For example, these include modifying, adding, or omitting any component, and even extracting at least one component from at least one embodiment and combining it with a component from another embodiment.

[0076] The above describes in detail preferred embodiments, but the present invention is not limited to the above-described embodiments, and various modifications and substitutions can be made to the above-described embodiments without departing from the scope of the claims.

[0077] Various aspects of the present disclosure are summarized below as appendices.

[0078] (Appendix 1) a stage having a protective part, a vacuum suction area for fixing a semiconductor wafer to be irradiated with laser light, and a hard non-adhesive material provided on the side of the semiconductor wafer that comes into contact with the protective part, on which the semiconductor wafer is placed so that the protective part comes into contact; When the radius of the semiconductor wafer is d mm, the width of the foamed region where the protective portion foams is b mm, and the width of the deteriorated region where the hard non-adhesive material deteriorates is cm mm, the vacuum suction region has a radius that is {d-(b+c)} / d times the radius of the semiconductor wafer and is contained within a circle that is centered on the semiconductor wafer. Semiconductor manufacturing equipment. (Appendix 2) When the semiconductor wafer is 12 inches, the vacuum suction area is contained within a circle having a radius 11 / 15 times the radius of the semiconductor wafer and a center concentric with the semiconductor wafer. 2. The semiconductor manufacturing apparatus according to claim 1. (Appendix 3) When the semiconductor wafer is 8 inches, the vacuum suction area is contained within a circle having a radius 3 / 5 times the radius of the semiconductor wafer and a center concentric with the semiconductor wafer. 2. The semiconductor manufacturing apparatus according to claim 1. (Appendix 4) When the semiconductor wafer is 6 inches, the vacuum suction area is contained within a circle having a radius 7 / 15 times the radius of the semiconductor wafer and a center concentric with the semiconductor wafer. 2. The semiconductor manufacturing apparatus according to claim 1. (Appendix 5) the stage has suction holes for suctioning the semiconductor wafer; 5. The semiconductor manufacturing apparatus according to any one of claims 1 to 4. (Appendix 6) a surface of the stage in contact with the semiconductor wafer is smaller than a surface of the semiconductor wafer in contact with the stage; 6. The semiconductor device according to any one of claims 1 to 5. (Appendix 7) the stage includes, within the vacuum suction region, lift pins that move the semiconductor wafer in a direction away from the stage; 7. The semiconductor device according to claim 1. (Appendix 8) The hard non-stick material includes a material containing silicon and oxygen. The semiconductor manufacturing apparatus according to claim 1. 8. The semiconductor device according to any one of claims 1 to 7. (Appendix 9) The method further includes a laser device that irradiates the semiconductor wafer with the laser light. 9. The semiconductor device according to any one of claims 1 to 8. (Appendix 10) a protective portion forming step of forming a protective portion on the semiconductor wafer; a placing step of placing the semiconductor wafer on a stage having a hard non-adhesive material and a vacuum suction area that is contained within a circle having a radius {d-(b+c)} / d times the radius of the semiconductor wafer and a center concentric with that of the semiconductor wafer, where d mm is the radius of the semiconductor wafer, b mm is the width of a foamed area where the protective portion foams, and cm mm is the width of a deteriorated area where the hard non-adhesive material deteriorates; a heat treatment step of irradiating the semiconductor wafer with laser light from a side opposite to the side in contact with the stage; a lifting step of moving lift pins provided on the stage to separate the semiconductor wafer from the stage, Semiconductor device manufacturing method (Appendix 11) the stage has suction holes for suctioning the semiconductor wafer; 11. A method for manufacturing a semiconductor device according to claim 10. (Appendix 12) In the lifting step, the lift pins are raised in multiple steps. 12. A method for manufacturing a semiconductor device according to claim 10 or 11. (Appendix 13) In the heat treatment step, the laser light is irradiated perpendicularly to the semiconductor wafer. 13. A method for manufacturing a semiconductor device according to any one of claims 10 to 12. [Explanation of symbols]

[0079] 1 stage, 2 lift pin, 3 suction hole, 4 through hole, 5 end, 6 semiconductor wafer, 7 protective part, 8 hard non-adhesive material, 101 semiconductor manufacturing equipment

Claims

1. a stage having a protective part, a vacuum suction area for fixing a semiconductor wafer to be irradiated with laser light, and a hard non-adhesive material provided on the side of the semiconductor wafer that comes into contact with the protective part, on which the semiconductor wafer is placed so that the protective part comes into contact; When the radius of the semiconductor wafer is d mm, the width of the foamed region where the protective portion foams is b mm, and the width of the deteriorated region where the hard non-adhesive material deteriorates is cm mm, the vacuum suction region has a radius that is {d-(b+c)} / d times the radius of the semiconductor wafer and is contained within a circle that is concentric with the semiconductor wafer. Semiconductor manufacturing equipment.

2. When the semiconductor wafer is 12 inches, the vacuum suction area is contained within a circle having a radius 11 / 15 times the radius of the semiconductor wafer and a center concentric with the semiconductor wafer. The semiconductor manufacturing apparatus according to claim 1 .

3. When the semiconductor wafer is 8 inches, the vacuum suction area is contained within a circle having a radius 3 / 5 times the radius of the semiconductor wafer and a center concentric with the semiconductor wafer. The semiconductor manufacturing apparatus according to claim 1 .

4. When the semiconductor wafer is 6 inches, the vacuum suction area is contained within a circle having a radius 7 / 15 times the radius of the semiconductor wafer and a center concentric with the semiconductor wafer. The semiconductor manufacturing apparatus according to claim 1 .

5. the stage has suction holes for suctioning the semiconductor wafer; The semiconductor manufacturing apparatus according to claim 1 .

6. a surface of the stage in contact with the semiconductor wafer is smaller than a surface of the semiconductor wafer in contact with the stage; The semiconductor manufacturing apparatus according to claim 1 .

7. the stage includes, within the vacuum suction region, lift pins that move the semiconductor wafer in a direction away from the stage; The semiconductor manufacturing apparatus according to claim 1 .

8. The hard non-stick material includes a material containing silicon and oxygen. The semiconductor manufacturing apparatus according to claim 1 .

9. The method further includes a laser device that irradiates the semiconductor wafer with the laser light. The semiconductor manufacturing apparatus according to claim 1 .

10. a protective portion forming step of forming a protective portion on the semiconductor wafer; a placing step of placing the semiconductor wafer on a stage having a hard non-adhesive material and a vacuum suction area that is contained within a circle having a radius {d-(b+c)} / d times the radius of the semiconductor wafer and a center concentric with the semiconductor wafer, where d mm is the radius of the semiconductor wafer, b mm is the width of a foamed area where the protective portion foams, and cm mm is the width of a deteriorated area where the hard non-adhesive material deteriorates; a heat treatment step of irradiating the semiconductor wafer with laser light from a side opposite to the side in contact with the stage; a lifting step of moving lift pins provided on the stage to separate the semiconductor wafer from the stage, A method for manufacturing a semiconductor device.

11. the stage has suction holes for suctioning the semiconductor wafer; The method for manufacturing a semiconductor device according to claim 10.

12. In the lifting step, the lift pins are raised in multiple steps. The method for manufacturing a semiconductor device according to claim 10.

13. In the heat treatment step, the laser light is irradiated perpendicularly to the semiconductor wafer. The method for manufacturing a semiconductor device according to claim 10.

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