Method for manufacturing display device

Abstract

To provide a thinner display device including a touch sensor, a thinner display device with higher display quality, a method for manufacturing a display device with high mass productivity, or a display device with high reliability.SOLUTION: A multilayer substrate in which a sufficiently thin substrate and a relatively thick support substrate are stacked on each other is used as a substrate. Of the multilayer substrate, one surface of the thinner substrate is provided with a layer including a touch sensor, and one surface of the other substrate is provided with a layer including a display element. After two sets of such multilayer substrates are attached to each other so that the touch sensor and the display element face each other, the support substrate and the thin substrate are separated from each other in each multilayer substrate.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a display device for displaying images. [Background technology]

[0002] In recent years, mobile phones, smartphones, personal computers, tablet devices, and portable Various portable electronic devices such as game consoles and portable music players are becoming increasingly popular. As an interface for such portable electronic devices, By providing a touch sensor, electronic devices that can be operated more intuitively are realized.

[0003] The display typically uses organic EL (Electro Luminescence) elements. Light-emitting devices, liquid crystal display devices, electronic paper that displays by electrophoresis, etc. can be applied.

[0004] For example, the basic structure of an organic EL element is a layer containing a light-emitting organic compound between a pair of electrodes. By applying a voltage to this element, light is emitted from the light-emitting organic compound. A display device using such an organic EL element is called a liquid crystal display device. Since it does not require a backlight, which was previously required in some devices, it is thin, lightweight, has high contrast, and consumes less power. For example, an example of a display device using an organic EL element is This is disclosed in reference 1.

[0005] In addition, there are two types of touch sensors, the resistive type and the capacitive type. Various methods are known, such as a surface acoustic wave method and an infrared method. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] Japanese Patent Application Laid-Open No. 2002-324673 Summary of the Invention [Problem to be solved by the invention]

[0007] Portable electronic devices are becoming lighter and smaller in size to increase their portability and convenience. To achieve this, the individual components that make up electronic devices are being made thinner and smaller. For example, one of the components that make up electronic devices is a display device.

[0008] Here, in the case of a display device in which a touch sensor and a display unit are stacked, the total thickness is made sufficiently thin. For example, when manufacturing a touch sensor or a display, it is necessary to use relatively thick By creating touch sensors and display elements on a thin substrate and then polishing the backside of the substrate, Although it is possible to make the display device thinner, the yield is low due to the polishing process after the element is fabricated. In addition, when forming elements directly on a thin substrate, the amount of bending of the substrate The substrates are difficult to transport due to their large size. In addition, the substrates may break during transportation or processing. What problems will arise?

[0009] In addition, a substrate with a color filter is placed over the display element, and a display with high display quality is achieved. Even when a thin substrate is used as the substrate, the above-mentioned bending of the substrate, etc. Due to this, it is difficult to align the color filter and the display element with high precision. However, there has been a problem in that it is difficult to achieve both high display quality and a slim display device.

[0010] The present invention has been made under such a technical background. Another object of the present invention is to reduce the thickness of a display device including the sensor. Another object of the present invention is to reduce the thickness of a display device that can be mass-produced. Another object is to provide a manufacturing method thereof. This is one of the challenges. [Means for solving the problem]

[0011] In order to solve the above problems, the structure of a substrate used in manufacturing a touch sensor and a display element is The substrate is a laminated substrate in which a sufficiently thin substrate and a relatively thick support substrate are laminated. A layer having a touch sensor is provided on one surface of the thinnest substrate of the laminated substrate. A layer including a display element is provided on one surface of the thinner substrate among the different laminated substrates. Then, after bonding the two sets of laminated substrates together so that the touch sensor and the display element face each other, In each laminated substrate, the support substrate and the thin substrate may be separated.

[0012] That is, in a method for manufacturing a display device according to one embodiment of the present invention, a first support substrate is fixed to the first support substrate. a first substrate on a surface not facing the first support substrate, the first substrate having an element layer including a light emitting element provided thereon; A color filter layer is formed on a surface of the substrate that is not facing the third support substrate. The third substrate is attached to the first substrate by a first adhesive layer so that the element layer and the color filter layer face each other. a step of peeling the third substrate from the third support substrate after bonding; a first support substrate, the first surface of which is fixed to the second support substrate, and a sensor layer is provided on the surface of the second support substrate that does not face the second support substrate; The second substrate is bonded to the second substrate with a second adhesive layer so that the element layer and the sensor layer face each other. a step of peeling the second substrate from the second support substrate; and a step of peeling the first substrate from the first support substrate. and forming a first substrate, a second substrate, and a third substrate on the first substrate. A glass substrate having a thickness of 0 μm or more and 200 μm or less is used, and a first support substrate, a second support substrate, The third support substrate is made of a material thicker than the glass substrate.

[0013] By using such a manufacturing method, a touch sensor can be provided and the total thickness can be made extremely thin. The display device can be manufactured with a high yield. When the substrate and the first substrate on which the display element is provided are bonded together, a support substrate is provided for each. This allows two substrates to be bonded together with high alignment accuracy.

[0014] Furthermore, three sheets each having a touch sensor, a display element, and a color filter layer are provided. As a result, a display device with a sufficiently thin total thickness and improved display quality is obtained. It can be manufactured with a high yield. In addition, the third substrate on which the color filter layer is provided is When the first substrate and the second substrate on which the display element is provided are bonded together, a support substrate is provided for each of them. This prevents misalignment of the color filters and pixels, allowing for high alignment of the two substrates. Therefore, it is possible to bond the images with extremely high resolution (for example, 300 ppi or more). Preferably, the pixel density is 400 ppi or more, more preferably 500 ppi or more, and An extremely thin display device can be realized.

[0015] In addition, a manufacturing method of a display device according to another embodiment of the present invention is a method for manufacturing a display device in which a first support substrate is fixed to the first support substrate, a first substrate on a surface not facing the first support substrate, the first substrate having an element layer including a light emitting element provided thereon; A color filter layer is formed on a surface of the substrate that is not facing the third support substrate. The third substrate is attached to the first substrate by a first adhesive layer so that the element layer and the color filter layer face each other. a step of peeling the third substrate from the third support substrate after bonding; a first support substrate, the first surface of which is fixed to the second support substrate, and a sensor layer is provided on the surface of the second support substrate that does not face the second support substrate; The second substrate is bonded to the second substrate by a second adhesive layer so that the color filter layer and the sensor layer face each other. and then peeling the second substrate from the second support substrate. and peeling the first substrate, the second substrate, and the third substrate from each other. A glass substrate having a thickness of 10 μm or more and 200 μm or less is used, and a first support substrate, a second The support substrate and the third support substrate are made of a material thicker than the glass substrate.

[0016] By using such a manufacturing method, a touch sensor can be provided on the opposite side of the display side of the display device. A display device having a small total thickness and provided with the touch sensor can be manufactured with a high yield. By providing the sensor on the opposite side of the display, the user can perform input operations without blocking the display with their fingers, etc. This allows you to play games that require touch input, and movies and other video content. This is suitable for electronic devices that can play back content.

[0017] In addition, a manufacturing method of a display device according to another embodiment of the present invention is a method for manufacturing a display device in which a first support substrate is fixed to the first support substrate, a first substrate on a surface not facing the first support substrate, the first substrate having an element layer including a light emitting element provided thereon; The sensor layer and the color filter are fixed on a second support substrate and are disposed on a surface that does not face the second support substrate. The second substrate on which the filter layer is laminated is placed so that the element layer and the sensor layer face each other. a step of adhering the first substrate and the second substrate using an adhesive layer; and a step of adhering the first substrate to the second substrate. and a step of peeling the first substrate from the first support substrate; and a step of peeling the second substrate from the second support substrate. Furthermore, the first substrate and the second substrate have a thickness of 10 μm or more and 200 μm or less. The lower glass substrate is used, and the first support substrate and the second support substrate are made of a material thicker than the glass substrate. A substrate is used.

[0018] By using this manufacturing method, it is possible to fabricate a touch sensor and a color filter on a single substrate. Since the substrates can be stacked, the number of substrates can be reduced, resulting in a display device with a thinner overall thickness. In addition, when the substrate and the substrate on which the display element is provided are bonded together, a support may be used. The two substrates can be bonded together with high alignment accuracy. This makes it possible to realize a display device having high-definition pixels.

[0019] In the above, the glass substrate is fixed by being in close contact with the base material, and the glass substrate and It is preferable that each of the substrates has a surface roughness of 2 nm or less on the bonding surface.

[0020] Alternatively, in the above, a resin containing an organic compound or a silicon compound is provided on a substrate, and the resin It is preferable that the glass substrate is fixed to the base material by being in close contact with the glass substrate. .

[0021] By using such a laminated substrate, the support substrate and the substrate can be used as a display element, a touch sensor, It will not peel off during the manufacturing process of color filters, etc., and the peeling process is easy. Peeling can be easily performed.

[0022] In addition, the display device of one embodiment of the present invention includes a first substrate provided with an element layer including a light-emitting element, and a second substrate on which a sensor layer is provided, and the first substrate and the second substrate are connected to each other. The first substrate and the sensor layer are bonded to each other by an adhesive layer so as to face each other. The first and second substrates are both glass substrates having a thickness of 10 μm or more and 200 μm or less. A first conductive film is provided on the substrate, and a second conductive film is provided on the second substrate, the second conductive film being electrically connected to the sensor layer. The first conductive film and the second conductive film are electrically connected via a conductive connector. is connected to.

[0023] By adopting such a configuration, the total thickness of the display device equipped with the touch sensor can be made extremely thin. Furthermore, it is possible to connect an external FPC etc. to exchange signals with the touch sensor. By providing the external connection electrodes on the substrate on which the display element is formed, the external connection of the touch sensor can be The external connection electrodes of the display unit including the display element and the external connection electrodes of the display unit are both provided on one side of the display device. Therefore, the area required for connecting the FPC can be reduced. When such a display device is applied to an electronic device, the area occupied by the display device inside the electronic device can be reduced. This allows for greater freedom in the design of electronic devices.

[0024] In the display device, the second substrate has a color filter layer superposed on the sensor layer. It is preferable that a stator is provided.

[0025] In this way, a color filter is provided on the substrate on which the touch sensor is provided. This allows the color filter to be provided without increasing the thickness. Therefore, a display device with an extremely thin overall thickness and improved display quality can be realized.

[0026] In the display device, the adhesive layer surrounds the light-emitting element and is disposed between the connector and the light-emitting element. The first conductive film and the second conductive film are electrically connected outside the area surrounded by the adhesive layer. It is preferable to have a configuration in which they are connected.

[0027] In this way, the adhesive layer is provided so as to surround the light emitting element, and the touch sensor is provided in the outer area. By providing the connection part, impurities from the member including the connector provided at the connection part are emitted. Since it is possible to prevent the intrusion into the area where the element is provided, a highly reliable display device can be achieved. It can be placed.

[0028] In any of the above display devices, the adhesive layer preferably contains a glass material.

[0029] As an adhesive layer, a material containing a glass material, such as powdered glass (also called frit glass) This type of material effectively prevents moisture and gas from passing through. This effectively suppresses the deterioration of the light-emitting element, resulting in a highly reliable display device. This makes it possible to achieve this position.

[0030] In any of the above display devices, the element layer may include a transistor electrically connected to the light-emitting element. a semiconductor in which a channel of the transistor is formed includes an oxide semiconductor; It is preferable to set the following.

[0031] Transistors that use oxide semiconductors can relatively easily achieve high field-effect mobility. Therefore, the transistor size can be made smaller than when using amorphous silicon, for example. This is preferable because it can improve the aperture ratio and achieve high definition. As mentioned above, impurities such as these can change the electrical properties of the film, so By placing the transistor on the inner side and using a material containing glass for the adhesive layer, Therefore, a more reliable display device can be realized.

[0032] In any of the above display devices, a layer electrically connected to the element layer is provided on the first substrate. A first connection terminal and a second connection terminal electrically connected to the first conductive film are connected to the second substrate. The first and second connection terminals are electrically connected to each other and are provided at positions where they do not overlap. and a reinforcing member is provided in contact with the FPC and the second substrate. It is preferable.

[0033] In this way, by reinforcing the area between the FPC and the second substrate with a reinforcing material, Even if a very thin substrate is used, the mechanical strength of the substrate is relatively low during subsequent handling. This prevents cracks from occurring in the substrate in this area, resulting in a highly reliable display device. can.

[0034] In this specification, the term "display device" refers to an image display device having a plurality of pixels. In addition, connectors, such as FPC (Flexible Printed Circuit) cuit) or TCP (Tape Carrier Package) is attached. modules with a printed wiring board at the end of the TCP, or modules with pixel-shaped The IC (integrated circuit) is directly mounted on the substrate using the COG (Chip On Glass) method. The module mounted on the display device is also included in the display device. [Effects of the Invention]

[0035] According to the present invention, the thickness of a display device equipped with a touch sensor can be reduced. The thickness of the display device having the increased level can be reduced. Alternatively, the display device can be manufactured with high mass productivity. Alternatively, a highly reliable display device can be provided. [Brief explanation of the drawings]

[0036] [Figure 1] 1A to 1C illustrate an example of a manufacturing method of a display device according to one embodiment of the present invention. [Figure 2] 1A to 1C illustrate an example of a manufacturing method of a display device according to one embodiment of the present invention. [Figure 3] 1A to 1C illustrate an example of a manufacturing method of a display device according to one embodiment of the present invention. [Figure 4] 1A to 1C illustrate an example of a manufacturing method of a display device according to one embodiment of the present invention. [Figure 5] 1A to 1C illustrate a structural example of a display device according to one embodiment of the present invention. [Figure 6] 1A to 1C illustrate a structural example of a display device according to one embodiment of the present invention. [Figure 7] 1A to 1C illustrate a structural example of a display device according to one embodiment of the present invention. [Figure 8] 1A to 1C illustrate a structural example of a light-emitting element according to one embodiment of the present invention. [Figure 9] 1A to 1C illustrate examples of electronic devices to which a display device according to one embodiment of the present invention is applied. DETAILED DESCRIPTION OF THE INVENTION

[0037] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. The present invention is not limited to the above embodiments, and various changes and modifications may be made in form and detail without departing from the spirit and scope of the present invention. Therefore, the present invention is based on the following embodiments. It should be noted that the following description of the invention is not intended to be limiting. Therefore, the same reference numerals are used in common between different drawings for the same parts or parts having similar functions. , and a repeated explanation thereof will be omitted.

[0038] In each figure described in this specification, the size, layer thickness, or area of each component is The figures may be exaggerated for clarity and are not necessarily limited to that scale. stomach.

[0039] In addition, in this specification, "electrically connected" means "something that has some kind of electrical effect." This includes cases where the device is connected via a "of" is not subject to any particular restrictions as long as it allows the transmission and reception of electrical signals between connected objects. For example, "things that have some kind of electrical action" include electrodes, wiring, and transistors. switching elements such as capacitors, resistors, coils, capacitors, and other elements with various functions This includes children, etc.

[0040] (Embodiment 1) In this embodiment, a structural example of a display device according to one embodiment of the present invention and a manufacturing method thereof will be described. The description will be made with reference to the drawings.

[0041] [Production method example 1] First, a laminated substrate is prepared in which a first substrate 101 is laminated on a first support substrate 102.

[0042] The first substrate 101 has an insulating surface with a thickness of 10 μm or more and 200 μm or less. The first substrate 101 is made of a glass material, an organic resin material, or a gold material. Conductive materials including metals or alloys can be used.

[0043] It is preferable to use a glass material for the first substrate 101. This makes it relatively easy to fabricate large substrates with extremely flat surfaces and uniform thicknesses. Such glass substrates can be manufactured using a float method, an overflow method, or the like. It can be made by

[0044] When the first substrate 101 is the substrate on the display surface side, a light-transmitting substrate is used. In the case of the substrate on the opposite side to the display surface, a non-transparent substrate may be used. Since conductive materials also have high thermal conductivity, for example, if a conductive substrate is used as the first substrate, The heat dissipation property is improved with respect to heat generated when the elements in the element layer 103 described later are driven. When a conductive substrate is used, the surface on which the element layer 103 is to be formed is insulated. It is preferable to keep

[0045] The first support substrate 102 is made of a base material that is at least thicker than the first substrate 101. The thickness of the support substrate 102 is determined so that the substrate can be easily transported during the fabrication of the element layer 103, which will be described later. For ease of use, it is preferable to determine the thickness of the first substrate 101 in consideration of the thickness. The total thickness of the first support substrate 102 and the first substrate 101 stacked together is If the thickness is set to the same as the thickness of the substrate that can be processed in the machine (or production line, manufacturing line), Specifically, the total thickness of the first support substrate 102 and the first substrate 101 (when an adhesive is used) If so, the thickness of the material (including the thickness of the material itself) should be greater than 0.4 mm and less than 2.0 mm, preferably 0. The thickness of the support substrate is set to be 5 mm or more and 1.0 mm or less.

[0046] The material of the first support substrate 102 may be a glass material, an organic resin material, or a metal or alloy. Conductive materials containing gold can be used. Preferably, glass material is used. Glass By using this material, the flatness of the bonding surface with the first substrate 101 can be increased. This can improve the adhesion between them.

[0047] The first support substrate 102 and the first substrate 101 are fixed by being in close contact with each other. Therefore, in the manufacturing process of the element layer 103, This prevents unintentional peeling and allows for easy peeling in the subsequent peeling step. .

[0048] When the first support substrate 102 and the first substrate 101 are fixed in close contact with each other, The surface roughness in the arithmetic mean roughness is set to 5 nm or less, preferably 2 nm or less. By bringing the two extremely flat surfaces into close contact with each other, the first support substrate 102 and the first substrate 1 01 and can be fixed.

[0049] In addition, when peeling the first support substrate 102 from the first substrate 101, a physical force is not applied. The peeling can be achieved by applying the force perpendicular to the surface. By providing a region with a relatively large surface roughness on the surface of one of the substrates at the end of the substrate, This makes it easier to peel off.

[0050] When the first support substrate 102 and the first substrate 101 are fixed together with a peelable adhesive, It is preferable to use a resin containing an organic compound or a silicon compound as the adhesive. When a glass material is used for the support substrate 102 and the first substrate 101, a siloxane bond is used. It is preferable to use a resin that

[0051] When the first support substrate 102 and the first substrate 101 are fixed together, first, After applying the resin diluted with a solvent to the surface, the solvent is evaporated and the resin is hardened. The first substrate 101 can be fixed by being pressed against it. When the first support substrate 102 and the first substrate 101 are peeled off, the first support substrate 102 and the first substrate 101 are peeled off in a direction perpendicular to the contact surface. By applying force, the first adhesive layer can be easily peeled off. By forming a resin on the support substrate 102 side, the resin remains on the first substrate 101 after peeling. This can prevent this from happening.

[0052] In this embodiment, the first support substrate 102 and the first substrate 101 are made of glass. A substrate is used.

[0053] Next, the element layer 103 is formed on the surface of the first substrate 101 opposite to the first support substrate 102. (Figure 1(A)).

[0054] The element layer 103 has a plurality of pixels each including at least a display element. In the case of a Trick type display device, the pixel may include a transistor and a capacitance element. In addition, the element layer 103 is provided with a driving circuit (a gate driving circuit, a source driving circuit) for driving pixels. The element layer 103 may further include wirings and electrodes.

[0055] Display elements include organic EL elements, liquid crystal elements, and electrophoretic display elements. can be used.

[0056] The element layer 103 can be fabricated by various methods. For example, In the case of an active matrix display device to which the above is applied, The gate electrode (and wiring) that make up the transistor, the gate insulating layer, the semiconductor layer, and the source electrode and drain electrodes (and wiring), and a first electrode, a light emitting layer, and a second electrode are formed on the upper layer via an insulating layer. A layer containing a conductive organic compound and a second electrode are laminated in this order to electrically connect the transistor. An optical element is formed.

[0057] Next, a laminated substrate is prepared in which the second substrate 111 is fixed onto the second support substrate 112. Here, the laminated substrate may have the same structure as that described above.

[0058] Next, the sensor layer 11 is formed on the surface of the second substrate 111 opposite to the second support substrate 112. 3 is formed (FIG. 1(B)). Here, as the sensor element that the sensor layer 113 has, A case where a capacitive touch sensor of this type is used will be described.

[0059] The sensor layer 113 includes a first sensor electrode 114, a second sensor electrode 115, and a first sensor electrode 116. The first sensor electrode 114 and the second sensor electrode 115 are insulated from each other by an insulating layer 116. The second sensor electrode 115 is provided in a striped pattern in one direction. A plurality of the first sensor electrodes 114 are provided in a stripe pattern that intersects with the first sensor electrodes 114. The first sensor electrode 114 and the second sensor electrode 115 do not necessarily have to be arranged perpendicular to each other. The angle may be less than 90 degrees.

[0060] The insulating layer 116 is used to insulate the first sensor electrode 114 from the second sensor electrode 115. The insulating layer 116 is sandwiched between the two electrodes. Although the structure in which the electrode 114 is covered is shown, the first sensor electrode 114 and the second sensor The insulating layer 116 may be provided only at the intersection of the electrodes 115 .

[0061] When the sensor layer 113 is provided on the display surface side, the first sensor electrode 114 and the second sensor It is preferable to use a light-transmitting conductive material for the electrode 115. It is preferable to use a light-transmitting insulating material.

[0062] The order of forming the element layer 103 and the sensor layer 113 does not matter, and they may be formed separately. Just do it.

[0063] Next, the laminated substrate of the first support substrate 102 and the first substrate 101 and the second support substrate 1 The laminated substrate of the first substrate 12 and the second substrate 111 is arranged so that the element layer 103 and the sensor layer 113 face each other. The first substrate 101 and the second substrate 111 are bonded together by an adhesive layer 104 (see FIG. 1(C)).

[0064] The adhesive layer 104 is made of a curable resin such as a thermosetting resin, a photocurable resin, or a two-liquid mixed curable resin. The resin can be used on either the first substrate 101 or the second substrate 111. The resin is applied to the first substrate 101 and the second substrate 111 in a state where the resin is in close contact with the first substrate 101 and the second substrate 111. By hardening the adhesive, the two substrates can be bonded together.

[0065] Alternatively, a glass material made of low-melting glass can be used as the adhesive layer 104. In this case, either the first substrate 101 or the second substrate 111 is coated with glass powder (frit). A paste containing a binder is applied to the surface, and the paste is then heat-treated to remove the binder. The glass layer is then formed by fusing the frit material together. With the other substrate in close contact, the glass layer is melted and solidified by irradiation with laser light, etc. By this, the first substrate 101 and the second substrate 111 are bonded to each other by a glass layer (also called a glass body). In particular, when an organic EL element is used as the display element, such adhesion is possible. It is preferable to use a glass material that is difficult for impurities such as moisture to pass through.

[0066] After the first substrate 101 and the second substrate 111 are bonded together, the first support substrate 102 and the second The support substrates 112 are then peeled off (FIG. 1(D)).

[0067] Here, the first support substrate 102 is peeled off, and then the second support substrate 112 is peeled off. This article explains:

[0068] First, the surface of the second support substrate 112 on which the second substrate 111 is not provided is attached to the suction stage. Then, the starting point of peeling is formed between the first support substrate 102 and the first substrate 101. For example, at the edge of the first support substrate 102 or the first substrate 101, two By inserting a sharp tool such as a blade into the boundary between two substrates, it can be used as a starting point for peeling. Alternatively, a liquid with low surface tension (such as alcohol or water) may be dropped onto the edge. The starting point of peeling may be formed by penetrating the boundary between the two substrates.

[0069] Next, a gentle physical force is applied from the starting point of the peeling in a direction approximately perpendicular to the adhesion surface. This allows the first support substrate 102 to be easily peeled off without being damaged. At this time, for example, tape or the like is attached to the first support substrate 102, and the tape is oriented in the above direction. The peeling may be performed by pulling, or by pulling a hook-shaped member onto the edge of the first support substrate 102. Alternatively, a member capable of being vacuum-adsorbed may be attached to the rear surface of the first support substrate 102. The adhesive may be attached to a surface and then peeled off.

[0070] Furthermore, static electricity is generated during the peeling process, and the first substrate 101 or the second substrate 111 becomes charged. If the first substrate 101 or the second substrate 111 is charged, the element layer 103 and the circuits and elements in the sensor layer 113 are subject to electrostatic discharge (ESD). There is a risk of destruction due to tic discharge. Conductive liquid (e.g., ionic liquid or water containing ions such as carbonated water) is used at the starting point of peeling. The liquid is always present on the peeling interface between the first support substrate 102 and the first substrate 101. It is preferable to peel off the film while it is still in contact with the surface. Alternatively, use an ionizer or similar device to reduce the ESD Peeling may be performed while suppressing the generation of the particles.

[0071] Subsequently, the second support substrate 112 is peeled off. At this time, the element layer 10 of the first substrate 101 is peeled off. The surface on which 3 is not formed is fixed on an adsorption stage or the like, and the second supporting substrate is attached in the same manner as above. The plate 112 and the second substrate 111 are peeled off.

[0072] In this example, the first support substrate 102 was peeled off, and then the second support substrate 112 was peeled off. For example, after peeling off the second support substrate 112, the first support substrate 113 is peeled off. 102 may be peeled off.

[0073] Through the above steps, the display device 100 having a touch sensor and an extremely thin total thickness can be manufactured. It can be produced with a high yield (Figure 1(E)).

[0074] The display device 100 includes a first substrate 101 and a second substrate 111 bonded together by an adhesive layer 104. The first substrate 101 is laminated with the second substrate 102. The second substrate 101 is laminated with the first substrate 102. The second substrate 101 is laminated with the second substrate 102. The first substrate 101 is laminated with the second substrate 102. The sensor layer 113 including the sensor element formed on the substrate 111 is provided facing the substrate 111. Furthermore, the first substrate 101 and the second substrate 111 have a thickness of 10 μm or more and 200 μm or less. It is characterized by its extremely thinness of less than 100 mm.

[0075] The second substrate 111 on which the touch sensor is provided and the first substrate 112 on which the display element is provided are also connected. Since the display device 100 can be constructed with two plates 101, the total thickness of the display device 100 can be Furthermore, the second substrate 111 and the first substrate 101 are bonded together. When the two substrates are bonded together, a support substrate is provided for each, allowing for highly accurate alignment. can be combined.

[0076] In addition, since the total thickness of the display device 100 is extremely thin, it is possible to provide flexibility. Therefore, electronic devices having curved displays and displays that can be bent can be used. Electronic devices and the like can also be realized.

[0077] This concludes the description of this example of the manufacturing method.

[0078] [Production method example 2] Hereinafter, a method for manufacturing a display device different from the above-described manufacturing method example 1 will be described. Specifically, a display device including a color filter will be described. The explanation of the overlapping parts will be omitted or simplified.

[0079] First, in the same manner as in the manufacturing method example 1, a first substrate 101 fixed to a first support substrate 102 The element layer 103 is formed on the second substrate 11 fixed to the second support substrate 112. The sensor layer 113 is formed on the substrate 1.

[0080] Next, a color filter layer is formed on the third substrate 121 fixed to the third support substrate 122. 123 (Figure 2(A)).

[0081] The third support substrate 122 has the same structure as the first support substrate 102. The same structure as the first substrate 101 can be used for the substrate 121 .

[0082] The color filter layer 123 includes a red color filter 124, a green color filter 125, The blue color filter 126 is provided in the element layer 103. The color filters are arranged corresponding to the pixels. A black matrix 12 is also provided between each color filter. 7. In addition, each color filter and black matrix 127 may be A covering overcoat may be provided.

[0083] Each color filter and black matrix 127 are made of an appropriate material and method. If the pixels are highly precise, they can be formed using photolithography. It is preferable that:

[0084] Also, on the third substrate 121, a positioning film is formed for later bonding with the first substrate 101. It is preferable to form a marker for use in the above-mentioned color filter or blue. It may be formed simultaneously with the rack matrix 127 or may be formed separately.

[0085] The formation of the element layer 103, the formation of the sensor layer 113, and the formation of the color filter layer 123 The order of formation does not matter, and each may be formed separately.

[0086] Next, the laminated substrate of the first support substrate 102 and the first substrate 101 and the third support substrate 1 The stacked substrate of the second substrate 22 and the third substrate 121 is arranged such that the element layer 103 and the color filter layer 123 face each other. The first substrate 101 and the third substrate 121 are bonded together by an adhesive layer 104. Can.

[0087] At this time, the first substrate 101 is connected to the first support substrate 102, and the third substrate 121 is connected to the third support substrate 103. Since the elements can be attached to the support substrate 122 in a fixed state, The positioning of each pixel of the color filter layer 103 and each color filter of the color filter layer 123 can be performed with high precision. Therefore, the first substrate 101 and the third substrate 121 can be formed with extremely thin Even if a thin substrate is used, a display device with high-definition pixels can be realized.

[0088] Next, the third support substrate 122 is peeled off from the third substrate 121 (FIG. 2(B)). The support substrate 122 may be peeled off in the same manner as in the above-described Manufacturing Method Example 1.

[0089] Next, a second support substrate 112 and a second substrate 111 on which a sensor layer 113 is provided are laminated. The substrate is attached to the rear surface of the third substrate 121 (the surface opposite to the surface on which the color filter layer 123 is provided). The sensor layer 113 is bonded to the first substrate 10 using the adhesive layer 105. The first substrate is bonded to the second substrate so that the surface on which the element layer 103 is formed faces the first substrate.

[0090] The adhesive layer 105 may have the same structure as the adhesive layer 104. Alternatively, the adhesive layer 105 may be a sheet having adhesive properties on both sides. When the adhesive layer 105 is provided so as to overlap the pixel, a light-transmitting material is used for the adhesive layer 105 .

[0091] Thereafter, the first substrate 101 and the first support substrate 102 are bonded together, and the second substrate 111 and the second support substrate 102 are bonded together. The support substrate 112 is then peeled off (FIG. 2(C)). This can be done in the same way as in Example 1.

[0092] Through the above process, a display device with a touch sensor and a color filter and an extremely thin overall thickness can be produced. A device 110 can be fabricated (Figure 2(D)).

[0093] The display device 110 includes a first substrate 101 and a third substrate 121 bonded together by an adhesive layer 104. The first substrate 101 is laminated with the second substrate 102. The second substrate 101 is laminated with the first substrate 102. The second substrate 101 is laminated with the second substrate 102. The first substrate 101 is laminated with the second substrate 102. The color filter layer 123 formed on the third substrate 121 is provided opposite to the color filter layer 123. Furthermore, the surface of the third substrate 121 on which the color filter layer 123 is not provided and the sensor layer 11 The second substrate 111 and the third substrate 121 on which the sensor layer 113 is provided are arranged so as to face each other. The first substrate 101 and the second substrate 11 are bonded together by an adhesive layer 105. The first and third substrates 121 are each extremely thin, having a thickness of 10 μm or more and 200 μm or less. It is characterized by the following.

[0094] The display device 110 having such a configuration includes a color filter layer 123, The touch sensor also improves the color purity of the display, allowing for higher quality images to be displayed. It is provided on the display surface side of the device 110.

[0095] Furthermore, by using such a manufacturing method, touch sensors, display elements, and color filters can be manufactured. Even if three substrates with filters are stacked, the total thickness is sufficient. A thin display device can be manufactured with a high yield. The third substrate 121 provided with the display element is bonded to the first substrate 101 provided with the display element. Since a support substrate is provided for each pixel, there is no misalignment between the color filter and the pixel. This allows the two substrates to be bonded together with high alignment accuracy. High resolution (for example, 300 ppi or more, preferably 400 ppi or more, more preferably 5 It is possible to realize a display device 110 having pixels of 000 ppi or more and having an extremely thin total thickness.

[0096] In addition, since the total thickness of the display device 110 is extremely thin, it is possible to make it flexible. Therefore, electronic devices having curved displays and displays that can be bent can be used. Electronic devices and the like can also be realized.

[0097] This concludes the description of this example of the manufacturing method.

[0098] [Variation 1] A method for manufacturing a display device that is partially different from the above-described Manufacturing Method Example 2 will be described below. Here, explanations of parts that overlap with those described above will be omitted or will be explained in a simplified manner.

[0099] First, following the manufacturing method example 2, a laminated substrate of a first support substrate 102 and a first substrate 101 is prepared. The laminated substrate of the third support substrate 122 and the third substrate 121 is formed by the device layer 103 and the color filter. The first substrate 101 and the third substrate 123 are arranged so as to face each other, and the adhesive layer 104 is used to bond the first substrate 101 and the third substrate 123 to each other. Paste 121 together.

[0100] Next, the first support substrate 102 and the first substrate 101 are peeled off (FIG. 3(A)). The support substrate 102 may be peeled off in the same manner as in the first manufacturing method.

[0101] Next, a second support substrate 112 and a second substrate 111 on which a sensor layer 113 is provided are laminated. The substrate is formed by attaching an adhesive layer 10 to the rear surface of the first substrate 101 (the surface on which the element layer 103 is not formed). At this time, the sensor layer 113 is bonded to the color filter of the third substrate 121. The laminate is bonded so that the surface on which the insulating layer 123 is formed faces the substrate.

[0102] The adhesive layer 105 may be made of the material exemplified in the above-mentioned manufacturing method example 2. The layer 113 is provided on the surface opposite to the display surface, so the adhesive layer 105 overlaps the pixel. Even when provided, the material used for the adhesive layer 105 does not need to have light-transmitting properties.

[0103] Thereafter, the second substrate 111 and the second support substrate 112 are bonded together, and the third substrate 121 and the third support substrate 112 are bonded together. The support substrate 122 is then peeled off (FIG. 3(B)). This can be done in the same way as in Example 1.

[0104] Through the above process, a very thin board with a touch sensor on the opposite side of the display surface is produced. A display device 120 can be manufactured (FIG. 3C).

[0105] The display device 120 includes a first substrate 101 and a third substrate 121 bonded together by an adhesive layer 104. The first substrate 101 is laminated with the second substrate 102. The second substrate 101 is laminated with the first substrate 102. The second substrate 101 is laminated with the second substrate 102. The first substrate 101 is laminated with the second substrate 102. The color filter layer 123 formed on the third substrate 121 is provided opposite to the color filter layer 123. Furthermore, the surface of the first substrate 101 on which the element layer 103 is not provided faces the sensor layer 113. The second substrate 111 on which the sensor layer 113 is provided and the first substrate 101 are bonded together by an adhesive layer 112. 05. Furthermore, the first substrate 101, the second substrate 111, and The third substrate 121 is extremely thin, having a thickness of 10 μm or more and 200 μm or less. It is characterized by:

[0106] The display device 120 having such a configuration includes a color filter layer 123, The touch sensor also improves the color purity of the display, allowing for higher quality images to be displayed. The touch sensor is provided on the opposite side of the display surface of the device 120. By doing so, the user can perform input operations without blocking the display with an input means such as a finger. Therefore, it is possible to play games that require touch input according to the displayed image, and to play movies and other content. It is suitable for electronic devices capable of reproducing image content.

[0107] In addition, since the total thickness of the display device 120 is extremely thin, it is possible to make it flexible. Therefore, electronic devices having curved displays and displays that can be bent can be used. Electronic devices and the like can also be realized.

[0108] This concludes the description of this modified example.

[0109] [Production method example 3] In this manufacturing method example, an example of a manufacturing method of a display device different from the above manufacturing method example will be described.

[0110] First, following the example of the manufacturing method 1, a first substrate 101 is fixed to a first support substrate 102. The element layer 103 is formed.

[0111] Next, a sensor layer 113 and a substrate 114 are formed on the second substrate 111 fixed to the second support substrate 112. The color filter layer 123 is formed by laminating layers (FIG. 4(A)).

[0112] First, following the manufacturing method example 1, a second substrate 111 is fixed to a second support substrate 112. , the sensor layer 113 is formed.

[0113] Subsequently, an insulating layer 128 is formed on the sensor layer 113 to cover the second sensor electrode 115 .

[0114] The insulating layer 128 may be made of an organic material or an inorganic material that is light-transmitting and insulating. The insulating layer 128 can be formed by various methods. The step shape of the first sensor electrode 114 and the second sensor electrode 115 of the sensor layer 113 is effectively covered. In this way, the surface of the insulating layer 128 can be made relatively flat, so that the color filters to be formed later can be formed easily. This is preferable because it can suppress variations in thickness and improve the display quality of the display device. .

[0115] Subsequently, the color filter layer 123 is formed on the insulating layer 128. 3 can be formed in the same manner as in Example 2 of the manufacturing method.

[0116] Next, the laminated substrate of the first support substrate 102 and the first substrate 101 and the second support substrate 1 The laminated substrate of the first substrate 12 and the second substrate 111 is arranged such that the element layer 103 and the color filter layer 123 face each other. The first substrate 101 and the second substrate 111 are bonded together by an adhesive layer 104. (Figure 4(B)).

[0117] At this time, the first substrate 101 is attached to the first support substrate 102, and the second substrate 111 is attached to the second support substrate 112. Since the elements can be attached to the support substrate 112 in a fixed state, The positioning of each pixel of the color filter layer 103 and each color filter of the color filter layer 123 can be performed with high precision. Therefore, the first substrate 101 and the second substrate 111 can be formed with extremely thin Even if a thin substrate is used, a display device with high-definition pixels can be realized.

[0118] Next, the first substrate 101 and the first support substrate 102 are bonded together, and the second substrate 111 and the second support substrate 102 are bonded together. The support substrate 112 is then peeled off (FIG. 4(C)). This can be done in the same way as in Example 1.

[0119] Through the above steps, a display device having a touch sensor and a color filter and a thinner overall thickness can be produced. Then, the position 130 can be fabricated (FIG. 4(D)).

[0120] The display device 130 includes a first substrate 101 and a second substrate 111 bonded together by an adhesive layer 104. The first substrate 101 is laminated with the second substrate 102. The second substrate 101 is laminated with the first substrate 102. The second substrate 101 is laminated with the second substrate 102. The first substrate 101 is laminated with the second substrate 102. The sensor layer 113 and the color filter layer 123 are stacked on the second substrate 111. Furthermore, the first substrate 101 and the second substrate 111 are respectively It is characterized by its extremely thin thickness of 10 μm or more and 200 μm or less.

[0121] The display device 130 having such a configuration has a sensor layer 113 and a color filter on one substrate. Since the layers 123 are stacked, the display device 130 can be constructed using two substrates. Therefore, the total thickness of the display device 130 can be reduced. The filter can be formed directly on the touch sensor, and can also be attached to the two substrates when they are bonded together. The substrate is fixed to the support substrate, so the touch sensor, color filter, and touch sensor The relative positions of the color filter and the pixel, and the color filter and the pixel can be aligned with high precision. This makes it possible to realize a display device equipped with extremely high-definition pixels and an extremely high-precision touch sensor.

[0122] In addition, since the total thickness of the display device 130 is extremely thin, it is possible to make it flexible. Therefore, electronic devices having curved displays and displays that can be bent can be used. Electronic devices and the like can also be realized.

[0123] This concludes the description of this example of the manufacturing method.

[0124] The display device exemplified in this embodiment is provided with a touch sensor, and the total thickness thereof is sufficiently reduced. According to the manufacturing method of the display device exemplified in this embodiment, the total thickness Therefore, a display device with sufficiently reduced noise can be manufactured with high mass productivity and high yield.

[0125] In the manufacturing method of the display device exemplified in this embodiment mode, an element layer, a sensor layer, and a The process of forming the element layer and the color filter layer has also been described. It is also possible to use a laminated substrate provided with a sensor layer and a color filter layer. For example, a laminated substrate on which an element layer is provided in advance and a laminated substrate on which a sensor layer is provided in advance are used. Manufacturing a display device using the plate is also one embodiment of the present invention. A laminated substrate with a color filter layer already provided, or a substrate with a sensor layer and a color filter layer already provided In another embodiment of the present invention, a display device is manufactured using a laminated substrate in which the above-mentioned elements are stacked. do.

[0126] This embodiment may be implemented in appropriate combination with other embodiment modes described in this specification. This can be done.

[0127] (Embodiment 2) In this embodiment mode, a display device that can be manufactured by the manufacturing method of the display device described in Embodiment Mode 1 will be described. A more specific configuration example of the device will be described below. The description of the parts will be omitted or simplified.

[0128] [Configuration example] FIG. 5A is a perspective schematic diagram of a display device 200 exemplified in this configuration example. For clarity, only representative components are shown.

[0129] The display device 200 includes a display unit 20 sandwiched between a first substrate 101 and a second substrate 111. 1 and a touch sensor 202. An FPC 204 is attached to the first substrate 101. It is being used.

[0130] FIG. 5(B) is a schematic diagram showing the first substrate 101 and the second substrate 111 in FIG. 5(A) in an expanded state. A schematic diagram is shown.

[0131] The first substrate 101 includes a display unit 201 and a plurality of wirings electrically connected to the display unit 201. 206, and a plurality of wirings electrically connected to the touch sensor 202 via the contact portion 203. The wiring 206 and the wiring 207 are connected to the first substrate 1. 01, and some of these are connected to FPC 204 in that area. The external connection electrode 205 is configured for electrical connection.

[0132] The display unit 201 includes a pixel unit 211 having a plurality of pixels, a source driver circuit 212, and a gate driver circuit 213. 5B, the pixel portion 211 is sandwiched between the source driver circuit 212 and the pixel driver circuit 213. The pixel section 211 is connected to the source driver circuit 212. Alternatively, the light source 10 may be arranged along one side of the light source 10.

[0133] Display elements applicable to the pixel section 211 of the display section 201 include organic EL elements, liquid crystal elements, and the like. In addition, various display elements can be used, such as display elements that display by electrophoresis. can.

[0134] The second substrate 111 is provided with a touch sensor 202. , are provided on the surface of the second substrate 111 facing the first substrate 101. For clarity, the touch sensor 2 provided on the rear surface side (the back side of the paper) of the second substrate 111 is The O2 electrode is shown by a solid line.

[0135] The touch sensor 202 shown in FIG. 5B is an example of a projected capacitive touch sensor. The touch sensor 202 has a first sensor electrode 114 and a second sensor electrode 115. .

[0136] The first sensor electrode 114 and the second sensor electrode 115 are provided on the first substrate 101. The first wiring 207 is electrically connected to the first contact 203. The FPC 204 attached to the first substrate 101 is connected to the terminals provided on the second substrate 111. The contact sensor 202 can be driven. , which will be explained later.

[0137] Here, the shapes of the first sensor electrode 114 and the second sensor electrode 115 are as shown in FIG. As shown in (B), multiple quadrilaterals are connected in one direction. The area of the intersection between the first sensor electrode 114 and the second sensor electrode 115 is minimized. It is preferable to arrange the electrodes in this way. The area of the region that is not covered can be reduced, and the difference in transmittance caused by the presence or absence of the electrode Therefore, unevenness in the brightness of the light transmitted through the first substrate 111 can be suppressed.

[0138] The shapes of the first sensor electrode 114 and the second sensor electrode 115 are not limited to these. For example, the first sensor electrodes 114 may be arranged with as few gaps as possible. The second sensor electrode 115 on the upper layer is arranged so as not to overlap with the first sensor electrode 114. In this case, two adjacent ones of the plurality of electrodes may be spaced apart so that there is an area free of the electrodes. If a dummy electrode electrically insulated from the second sensor electrodes 115 is provided between the second sensor electrodes 115, This is preferable because the area of the region with different transmittances can be reduced.

[0139] In this way, the FPC 204 and the like for exchanging signals with the touch sensor 202 are connected. By providing the external connection electrodes on the first substrate 101 side on which the display section 201 is formed, The external connection electrodes of both the touch sensor and the display unit 201 are provided on one side of the display device 200. Therefore, the area required for connecting the FPC 204 can be reduced. Furthermore, as shown in Figure 5, by devising the wiring layout, it is possible to use only one FPC204. Such a display device 200 can be applied to an electronic device. This reduces the area occupied by the display device 200 inside the electronic device, which improves the design of the electronic device. It can increase the degree of freedom.

[0140] [Cross-section example 1] An example of a cross-sectional configuration of a display device 200 in which an organic EL element is applied to a display section 201 will be described below. and explain.

[0141] FIG. 6 shows the FPC 204 and the gate drive circuit in the display device 200 shown in FIG. 5(A). A cutting line AB cutting the area including the wiring 213 and a cutting line AB cutting the area including the pixel portion 211 are shown. When cutting along the cutting line EF that cuts the area including the line CD and the contact portion 203, FIG.

[0142] The first substrate 101 and the second substrate 111 are bonded together at their peripheries by an adhesive layer 104. In addition, the area surrounded by the first substrate 101, the second substrate 111, and the adhesive layer 104 At least a pixel portion 211 is provided in the area.

[0143] 6, the gate drive circuit 213 includes n-channel transistors 231 The example shown has a circuit that combines a gate driver circuit and a transistor 232. The configuration of the circuit 213 is not limited to this, and may be an n-channel transistor and a p-channel transistor. Various CMOS circuits combining p-channel transistors The same applies to the source driver circuit 212. In this configuration example, the gate drive circuit 213 and the solder pads 214 are disposed on the insulating surface on which the display unit 201 is formed. The figure shows the configuration of a driver-integrated display device in which a source driver circuit 212 is formed, but the display unit 20 Apart from the insulating surface on which the gate driver circuit 213 and the source driver circuit 212 are formed, For example, a drive circuit IC may be mounted using the COG method. Alternatively, a flexible printed circuit (FPC) on which a driver circuit IC is mounted using the COF method may be used. may be implemented.

[0144] FIG. 6 shows a cross-sectional structure of one pixel as an example of the pixel section 211. A switching transistor 233, a current control transistor 234, and A first electrode is electrically connected to one electrode (source electrode or drain electrode) of the transistor 234. An insulating layer 235 is provided to cover the end of the first electrode layer 221. A spacer 236 is formed on the edge layer 235 in an area overlapping with a black matrix 242, which will be described later. By providing a plurality of spacers 236 in the pixel section 211, the first substrate 10 Since the distance between the first substrate 1 and the second substrate 111 does not become closer than necessary, a highly reliable display device can be achieved. It can be said that:

[0145] It is preferable to use an organic resin material for the spacer 236, as it can be formed thick. The spacer 236 can be formed by using a positive or negative photosensitive resin. When a light-shielding material is used, light that is coming around from the light-emitting element 220 of the adjacent pixel is blocked. Color mixing between adjacent pixels can be suppressed.

[0146] The transistors included in the pixel section 211, the source driving circuit 212, and the gate driving circuit 213 are The structure of the transistor is not particularly limited. For example, it may be a staggered transistor or an inverted staggered transistor. The transistor may be a top gate type or a bottom gate type. The semiconductor material used for the transistor may be any of the following: For example, semiconductor materials such as silicon and germanium may be used, or indium, gallium, etc. Alternatively, an oxide semiconductor containing at least one of aluminum and zinc may be used.

[0147] The crystallinity of the semiconductor used in the transistor is not particularly limited. crystalline semiconductors (microcrystalline semiconductors, polycrystalline semiconductors, single-crystal semiconductors, or partially crystalline semiconductors) When a semiconductor having crystallinity is used, the This is preferable because it suppresses deterioration of the transistor characteristics.

[0148] As oxide semiconductors containing at least one of indium, gallium, and zinc, Typical examples include In-Ga-Zn-O metal oxides. When an oxide semiconductor with a wide gap and low carrier density is used, the leakage current during off-state The oxide semiconductor is preferably an oxide semiconductor having a low conductivity, because the oxide semiconductor can be suppressed. explain.

[0149] The light emitting element 220 is made up of a first electrode layer 221, a second electrode layer 223, and a dielectric film sandwiched between them. It has an EL layer 222. The light emitting element 220 will be described below.

[0150] In the light emitting element 220, the electrode layer provided on the light emitting side has a A material having light-transmitting properties is used.

[0151] Examples of light-transmitting materials include indium oxide, indium tin oxide, and indium zinc. Conductive oxides such as lead oxide, zinc oxide, and zinc oxide doped with gallium can be used. Alternatively, graphene may be used. Gold, silver, platinum, magnesium, nickel, Ru, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, or titanium Metallic materials such as those mentioned above, or alloy materials containing those metallic materials can be used. Nitrides of materials (for example, titanium nitride) may also be used. When using a material such as a silicon dioxide film or a nitride thereof, it is sufficient to make the material thin enough to have light-transmitting properties. A laminated film of the above materials can be used as the conductive layer. For example, an alloy of silver and magnesium By using a laminated film of indium tin oxide and silicon dioxide, the conductivity can be increased. Desirable.

[0152] Such an electrode layer is formed by a vapor deposition method, a sputtering method, or the like. Using a discharge method such as ink jet printing, a printing method such as screen printing, or a plating method It can be formed.

[0153] In addition, when the above-described conductive oxide having light-transmitting properties is formed by a sputtering method, When the conductive oxide is formed in an atmosphere containing argon and oxygen, the light transmittance is improved. It is possible.

[0154] When a conductive oxide film is formed on the EL layer 222, argon gas having a reduced oxygen concentration is used. a first conductive oxide film formed under an atmosphere containing argon and oxygen; By forming a laminated film of the deposited second conductive oxide film, damage to the EL layer 222 due to film formation can be reduced. Here, it is particularly preferable to use the first conductive oxide film. It is preferable that the purity of the argon gas used is high, for example, that the dew point is -70°C or less, preferably - It is preferable to use argon gas at 100°C or less.

[0155] The electrode layer provided on the side opposite to the light emitting side is made of a material that is reflective to the emitted light. .

[0156] Examples of materials that have light reflectivity include aluminum, gold, platinum, silver, nickel, and titanium. Metallic materials such as tin, chromium, molybdenum, iron, cobalt, copper, or palladium, and the like An alloy material containing a metal material can be used. Lanthanum, neodymium, germanium, etc. may be added to the material. Examples of alloy materials include: Aluminum and titanium alloy, aluminum and nickel alloy, aluminum and neodymium Alloys containing aluminum (aluminum alloys), such as silver and copper alloys, silver and para Examples include alloys containing silver, such as an alloy of zinc and copper, and an alloy of silver and magnesium. The alloy containing copper is preferable because it has high heat resistance. By stacking a metal oxide film or a metal oxide film, oxidation of the aluminum-containing film can be suppressed. As a metal material or metal oxide material provided in contact with the aluminum-containing film, Examples of the transparent material include titanium and titanium oxide. A film made of a metal material may be laminated. For example, a laminated film of silver and indium tin oxide, A laminated film of an alloy of silver and magnesium and indium tin oxide can be used.

[0157] Such an electrode layer is formed by a vapor deposition method, a sputtering method, or the like. Using a discharge method such as ink jet printing, a printing method such as screen printing, or a plating method It can be formed.

[0158] The EL layer 222 is a layer containing at least a light-emitting organic compound (hereinafter also referred to as a light-emitting layer). It may be composed of a single layer or a plurality of layers laminated together. The structure is composed of, from the anode side, a hole injection layer, a hole transport layer, a light emitting layer, and an electron transport layer. An example of the structure is a laminate of a layer, an electron injection layer, and an electron injection layer. These layers do not necessarily have to be provided in the EL layer 222. Specifically, a plurality of light-emitting layers may be stacked in the EL layer 222. Alternatively, a hole injection layer may be provided on the electron injection layer. Other components such as an electron relay layer can be added as needed. For example, two or more light-emitting layers having complementary colors may be stacked. By laminating these, white light can be emitted.

[0159] The EL layer 222 is formed by a vacuum deposition method or a discharge method such as an inkjet method or a dispense method. The conductive layer can be formed by a coating method such as spin coating, or a printing method.

[0160] In this embodiment, a reflective material is used for the first electrode layer 221, and a reflective material is used for the second electrode layer 222. A light-transmitting material is used for the layer 223. Therefore, the light-emitting element 220 is a top-emission type. It is a (top emission type) light emitting element, and the light is emitted from the second substrate 111 side when viewed from the light emitting element. is ejected.

[0161] The above is the description of the light emitting element 220.

[0162] On the first substrate 101, an insulating layer 237 is provided in contact with the upper surface of the first substrate 101, and a transistor an insulating layer 238 that functions as a gate insulating layer for the transistor; and an insulating layer 239 that covers the transistor. and an insulating layer 241 is provided.

[0163] The insulating layer 237 is provided for the purpose of suppressing the diffusion of impurities contained in the first substrate 101. The insulating layer 238 and the insulating layer 239 in contact with the semiconductor layer of the transistor It is preferable to use a material that suppresses the diffusion of impurities that promotes deterioration of the capacitor. The layers may include, for example, semiconductors such as silicon, or oxides or nitrides of metals such as aluminum. In addition, a laminated film of such an inorganic insulating material, or an oxynitride can be used. A laminated film of an inorganic insulating material and an organic insulating material may be used. 9 may not be provided if not required.

[0164] The insulating layer 241 is a flat layer that covers steps due to transistors and wiring provided in the lower layer. The insulating layer 241 is made of an organic resin material such as polyimide or acrylic. In addition, if it is possible to improve the flatness, an inorganic insulating material may be used. stomach.

[0165] Here, the layer including the transistor and the light-emitting element 220 corresponds to the element layer 103. In this example, the stacked structure from the top surface of the insulating layer 237 to the second electrode layer 223 is called the element layer. Let's say it's 103.

[0166] On the surface of the second substrate 111 facing the light emitting element 220, a first sensor electrode 114 and an insulating The layer 116 and the second sensor electrode 115 are provided, and these layers are stacked to form the sensor electrode of the first embodiment. This corresponds to the sensor layer 113.

[0167] The first sensor electrode 114 and the second sensor electrode 115 are connected to a light emitting element 220. For example, a material that can be used for the light-emitting element 220 described above is used. A light-transmitting conductive material can be used.

[0168] The insulating layer 116 insulates the first sensor electrode 114 from the second sensor electrode 115. The insulating layer 116 is made of a material that transmits light emitted from the light-emitting element 220. For example, An inorganic insulating material, an organic insulating material, or a laminated film of these can be used.

[0169] As shown in FIGS. 5 and 6, the first sensor electrode 114 and the second sensor electrode 115 is an area overlapping not only the pixel section 211 but also the source driving circuit 212 and the gate driving circuit 213. It may be provided up to.

[0170] In addition, at least in the region overlapping with the pixel section 211, the first sensor electrode 114 and the second sensor electrode 115 are An insulating layer 128 is provided to cover the sensor electrode 115. Furthermore, the insulating layer 128 A black matrix 242 and a color filter 243 are provided on the surface facing the element 220. It is being done.

[0171] The insulating layer 128 protects the second sensor electrode 115 and also serves to insulate the adjacent second sensor electrodes 115. 15, and can be surely insulated from them. The step shape of the first sensor electrode 114 and the second sensor electrode 115 is effectively covered. It is preferable to use a material with high insulating properties. For example, the same material as the insulating layer 241 is used. By flattening the surface of the edge layer 128, the thickness of the color filter 243 can be made uniform. Therefore, the display quality of the display device can be improved.

[0172] The color filter 243 is provided to adjust the color of light emitted from the light emitting element 220 and to enhance color purity. For example, in the case of using a white light emitting element to form a full color display device, In this case, multiple pixels with different color filters are used. A three-color filter of green (G), blue (B), or yellow (Y) may be used. It is also possible to add white (W) to the R, G, and B (and Y) colors. It is also possible to use four (or five) colors.

[0173] In addition, a black matrix 242 is provided between adjacent color filters 243. The black matrix 242 blocks light from leaking from the light emitting element 220 of an adjacent pixel. The black matrix 242 prevents adjacent pixels from emitting different colors. It may be arranged only between adjacent pixels and not between pixels of the same color. The end of the filter 243 is arranged to overlap with the black matrix 242, thereby reducing light leakage. The black matrix 242 prevents light emitted from the light emitting element 220. A light-shielding material can be used, and the material can be formed using a metal material or an organic resin material containing a pigment. As shown in FIG. 6, the black matrix 242 is connected to the gate drive circuit If the light emitting element 213 is provided in an area other than the pixel portion 211, unintended light leakage due to guided light etc. This is preferable because it can be suppressed.

[0174] In addition, an overcoat is provided to cover the color filter 243 and the black matrix 242. The overcoat protects the color filter 243 and the black matrix 242. In addition to preventing the diffusion of impurities contained in these materials, the overcoat A material that transmits light emitted from the element 220 is used, and an inorganic insulating material or an organic insulating material can be used. can.

[0175] The first substrate 101 and the second substrate 111 are bonded together by an adhesive layer 104. In this example, the first substrate 101 and the second substrate 111 are made of glass material, and the adhesive layer 104 is made of The glass material made of low melting point glass is used. The layer 104 effectively prevents impurities from entering the interior, which can cause deterioration of the light emitting element 220 and transistors. Since the noise can be effectively suppressed, a highly reliable display device can be obtained.

[0176] In particular, when an oxide semiconductor is used as a semiconductor for a transistor, As will be explained, when impurities such as hydrogen are contained in an oxide semiconductor film, the threshold voltage of a transistor increases. Therefore, the area where the transistor is provided The area is made up of a first substrate 101, a second substrate 111, and an adhesive layer 104, all of which are made of glass material. Sealing the device is extremely effective in preventing the intrusion of impurity elements, including hydrogen.

[0177] In the contact portion 203, a wiring 207 is provided on the first substrate 101, and a wiring 207 and a wiring The wiring 207 is connected to the source electrode of the transistor and the The electrode 244 is formed by processing the same conductive film as the drain electrode. The insulating layer 239 is formed by processing the same conductive film as the first electrode layer 221. The insulating layer 241 is electrically connected to the wiring 207 through an opening provided in the insulating layer 241. In this way, the wiring 207 and the electrode 244 provided in the contact portion 203 are connected to the transistor and the light emitting element. The conductive film used to form the element 220 is processed to form the element 220, thereby increasing the number of steps. This is preferable because the contact portion 203 can be easily formed without any need for a metal layer.

[0178] On the other hand, on the second substrate 111 side, the second sensor electrode 115 is extended to the contact portion 203. The contact portion 203 is provided so that its surface is exposed. Although not shown, the same applies to the contact portion of the first sensor electrode 114.

[0179] Furthermore, the contact portion 203 is provided with a resin layer 246 in which conductive particles 245 are dispersed. The conductive particles 245 in the resin layer 246 are conductive to both the second sensor electrode 115 and the electrode 244. By contacting the second sensor electrode 115 with the wiring 207, the second sensor electrode 115 is electrically connected to the wiring 207. do.

[0180] The conductive particles 245 are particles of organic resin or silica coated with a metal material. Nickel or gold is preferable as the metal material because it can reduce contact resistance. In addition, particles coated with two or more metal materials in layers, such as nickel coated with gold, are also available. It is preferable to use a child.

[0181] The resin layer 246 in which the conductive particles 245 can be dispersed can be made of a thermosetting organic resin, a photosensitive resin, or the like. It is preferred to use a curable organic resin, such as a curable organic resin.

[0182] The conductive particles 245 sandwiched between the second sensor electrode 115 and the electrode 244 are moved vertically. It is preferable that the shape is deformed by the pressure. , the contact area between the conductive particles 245 and the second sensor electrode 115 or electrode 244 is increased. Therefore, it is possible to securely establish electrical connections. The cross-sectional shape of the conductive particles 245 is shown as an ellipse having a major axis perpendicular to the substrate. However, in many cases, the cross section is circular or elongated in a direction parallel to the substrate. The shape is an ellipse with axial components.

[0183] 6, an adhesive layer 211 is formed to surround the pixel portion 211 including at least the light emitting element 220. 104 is provided, and a contact portion 203 is provided outside the adhesive layer 104. In particular, when a glass material is used as the adhesive layer 104, the contact portion 2 By providing the adhesive layer 103 on the outer side of the adhesive layer 104, the organic resin used in the contact portion 203 The diffusion of impurities such as water contained in the adhesive layer 104 to the inner region can be suppressed. This is preferable because it can be done easily.

[0184] As shown in FIG. 6, the area sealed by the adhesive layer 104 and the area outside this area are The layer that is provided across the area is made of a material that is permeable to water and hydrogen, such as an organic material. By adopting such a configuration, it is possible to effectively prevent the intrusion of water and hydrogen from the outside. This can effectively suppress the noise, thereby realizing a highly reliable display device.

[0185] When a curable resin is used as the adhesive layer 104, the adhesive layer 104 and the resin layer 246 The adhesive layer 104 is provided so as to overlap the contact portion 203, and the contact portion 2 Conductive particles 245 may be dispersed in the area overlapping with the electrode 03. In this case, the contact portion 203 does not need to be disposed outside the adhesive layer 104, so that the display device In this case, it is preferable to disperse a desiccant in the adhesive layer 104. For example, alkaline earth metal oxides (calcium oxide, barium oxide, etc.) are preferred. Other desiccants include substances that adsorb moisture by chemical adsorption. However, even if a substance that adsorbs moisture by physical adsorption, such as zeolite or silica gel, is used, good.

[0186] The wiring 206 is provided so as to extend outward from the area sealed by the adhesive layer 104. The wiring is electrically connected to the port driving circuit 213 (or the source driving circuit 212). A part of the end of the external connection electrode 206 forms the external connection electrode 205. 05 is a conductive film used for the source electrode or drain electrode of a transistor, The gate electrode is formed by stacking conductive films. By configuring the external connection electrodes 205 with This is preferable because it can increase the mechanical strength.

[0187] A connection layer 208 is provided in contact with the external connection electrode 205, and F The PC 204 is electrically connected to the external connection electrode 205. Anisotropic Conductive Film (ACF) ) and Anisotropic Conductive Paste (ACP) Paste) can be used.

[0188] Although not shown here, the wiring 207 is provided up to the edge of the first substrate 101. A part of the end of the electrode 205 constitutes an external connection electrode 205 and is electrically connected to the FPC 204 .

[0189] The ends of the wiring 206, wiring 207, and external connection electrode 205 are arranged so that their surfaces are not exposed. Covering the surface with an insulating layer is preferable because it can prevent problems such as surface oxidation and short circuits. At this time, the insulating layer covering the wiring 206, the wiring 207, and the external connection electrode 205 is formed in the pixel section 21. If the insulating layer is formed by processing the same film as any of the insulating layers constituting the insulating layer 1, the number of steps is increased. This is preferable because it can be formed without causing any damage.

[0190] 6, the FPC 204 and the second substrate 11 are connected between the FPC 204 and the adhesive layer 104. In this configuration example, a reinforcing member 209 is provided so as to contact both the first substrate 10 and the second substrate 10. An extremely thin glass substrate is used as the FPC 204 and the adhesive layer 104. Its mechanical strength is relatively low. Therefore, when incorporating a display device into an electronic device, FPC20 If mechanical force is applied to the area near the part, cracks may occur in that area. Therefore, by providing the reinforcing material 209 in this way, the area between the FPC 204 and the adhesive layer 104 The mechanical strength of the display device can be increased, and a highly reliable display device can be realized.

[0191] It is preferable to use an organic resin material as the reinforcing material 209. For example, a thermosetting organic Resin, photo-curable organic resin, two-component mixed curable organic resin, etc. You can be there.

[0192] The reinforcing material 209 may also be provided on the back surface of the first substrate 101. The substrate 101 is reinforced on both sides with the reinforcing material 209, thereby further increasing the mechanical strength. This makes it possible to prevent damage to a display device having an extremely thin total thickness.

[0193] This is the explanation of the cross-sectional structure example. By adopting this structure, the total thickness is extremely Therefore, a highly reliable display device that is thin and has excellent mechanical strength can be realized.

[0194] [Cross-section example 2] An example of a cross-sectional configuration of a display device 200 in which a liquid crystal element is applied to a display section 201 will be described below. The explanation of the parts that overlap with the above will be omitted or simplified. .

[0195] FIG. 7 is a schematic cross-sectional view of a display device exemplified in this configuration example. In comparison with the configuration illustrated in the above-described cross-sectional configuration example 1, the configuration of the pixel section 211 and the adhesive layer 104 is are different in different respects.

[0196] The pixel unit 211 is applied with an IPS (In-Plane-Switching) mode. The liquid crystal element 250 is formed by an electric field generated in the horizontal direction relative to the substrate surface. This controls the alignment of the liquid crystal.

[0197] The pixel portion 211 includes at least one switching transistor 256 and a In addition, the source electrode or the drain electrode of the transistor 256 is electrically connected to the A comb-shaped first electrode layer 251 is provided on the insulating layer 241. The second electrode layer 253 having a shape is provided on the same plane as the first electrode layer 251 so as to be insulated from the first electrode layer 251. It is being done.

[0198] At least one of the first electrode layer 251 and the second electrode layer 253 is provided with the above-mentioned light-transmitting conductive material. When a light-transmitting conductive material is used for both of these electrode layers, the pixel opening This is preferable because it can increase the efficiency.

[0199] In FIG. 7, the first electrode layer 251 and the second electrode layer 253 are shown with different hatches to distinguish them from each other. Although the patterns are clearly shown using the same conductive film, they can be formed by processing the same conductive film. is preferred.

[0200] In the pixel section 211, a color filter is formed on the second substrate 111 in the same manner as in the above-described cross-sectional configuration example 1. 7, a color filter 243 and a black matrix 242 are provided. An overcoat 255 is provided to cover the black matrix 242 and the transparent substrate 243. By providing the bar coat 255, the color filter 243 and the black matrix 24 2, the diffusion of impurities such as pigments contained in the liquid crystal 252 into the liquid crystal 252 can be suppressed.

[0201] Furthermore, a spacer is formed in the area where the overcoat 255 overlaps with the black matrix 242. The spacer 254 is provided with the spacer 23 in the cross-sectional configuration example 1. In this example, the spacer 254 is attached to the second substrate 6. Although the structure is such that it is provided on the 111 side, it may also be such that it is provided on the first substrate 101 side.

[0202] In addition, at least in the region where the first electrode layer 251 and the second electrode layer 253 are provided, The liquid crystal 252 is sealed in the first electrode layer 251, the second electrode layer 253, The liquid crystal element 250 is composed of the liquid crystal 252 .

[0203] By applying a voltage between the first electrode layer 251 and the second electrode layer 253, An electric field is generated, and the orientation of the liquid crystal 252 is controlled by the electric field. Images can be displayed by controlling the polarization of light from the backlight on a pixel-by-pixel basis. Cut.

[0204] An alignment film for controlling the alignment of the liquid crystal 252 may be provided on the surface in contact with the liquid crystal 252. The alignment film is made of a light-transmitting material. A polarizing plate is provided on the outer surface of the second substrate 111 when viewed from the liquid crystal element 250. The light from the backlight may be input from the side of the display device using the above.

[0205] In this configuration example, a color filter is provided in the area overlapping with the liquid crystal element 250. A full-color image display can be achieved by using a white light-emitting backlight. Multiple light-emitting diodes (LEDs) with different emitting colors were used as Diode) to perform time division display method (field sequential drive method) When the time-division display method is used, there is no need to provide a color filter. In addition, sub-pixels that emit light of R (red), G (green), and B (blue) may be provided. This allows for an improvement in the pixel aperture ratio and an increase in the number of pixels per unit area. It has advantages such as being able to

[0206] The liquid crystal 252 may be a thermotropic liquid crystal, a low molecular weight liquid crystal, a high molecular weight liquid crystal, a ferroelectric liquid crystal, Antiferroelectric liquid crystals can be used. In addition, when liquid crystals that exhibit a blue phase are used, the orientation This is preferable because no film is required and a wide viewing angle can be obtained.

[0207] In this configuration example, the liquid crystal element 250 to which the IPS mode is applied will be described. The structure of the crystal element is not limited to this, and other types include TN (Twisted Nematic) mode, FFS (Fringe Field Switching) mode, ASM (A xially Symmetric aligned Micro-cell) mode, OCB(Optically Compensated Birefringence) mode, FLC (Ferroelectric Liquid Crystal) mode , AFLC (AntiFerroelectric Liquid Crystal) model A card or the like can be used.

[0208] Here, it is preferable to apply the IPS mode or FFS mode to the liquid crystal element 250. A liquid crystal element to which such a mode is applied needs to have an electrode disposed on the second substrate 111 side. Therefore, the electrodes of the touch sensor provided on the second substrate 111 side and the electrodes of the liquid crystal element This suppresses the effect of parasitic capacitance that occurs between the .

[0209] In this configuration example, the resin layer 2 used in the contact portion 203 illustrated in the above-mentioned cross-sectional configuration example 1 is The adhesive layer 104 is made of the same material as the adhesive layer 46. A curable organic resin is used as the adhesive layer 4, and the adhesive layer 104 is set so as to overlap the contact portion 203. Furthermore, conductive particles 245 are dispersed in the area overlapping the contact portion 203. With this configuration, a display device with a narrow frame can be realized.

[0210] As shown in FIG. 7, layers to which organic materials are applied, such as the insulating layer 241 and the insulating layer 128, However, a pixel section 211 and a gate driving circuit 213 (and a source driving circuit 212) are provided. The area where the adhesive layer 104 is provided is not continuous with the area where the adhesive layer 104 is provided, and the edge between these areas is It is preferable that the insulating layer is processed into an island shape so that the insulating layer is formed in an island shape. Even when an organic resin is used for the adhesive layer 104, the insulating layer 241, the insulating layer 128, etc. This can prevent impurities such as moisture from diffusing into the liquid crystal element 250 and the transistors.

[0211] This concludes the explanation of this example of the configuration. Therefore, a highly reliable display device that is thin and has excellent mechanical strength can be realized.

[0212] This embodiment may be implemented in appropriate combination with other embodiment modes described in this specification. This can be done.

[0213] (Embodiment 3) In this embodiment, a structural example of a light-emitting element that can be applied to a light-emitting device of one embodiment of the present invention will be described. , will be explained with reference to the drawings.

[0214] The light-emitting element exemplified in this embodiment has a first electrode layer, a second electrode layer, and a second electrode layer. A layer containing a light-emitting organic compound (hereinafter referred to as an EL layer) is provided between the first electrode layer and the second electrode layer. Either the electrode layer or the second electrode layer functions as an anode, and the other functions as a cathode. The EL layer is provided between the first electrode layer and the second electrode layer. The material may be selected appropriately depending on the material of the electrode layer. An example of the configuration of the light-emitting device is shown below. It goes without saying that the configuration of the light emitting element is not limited to this.

[0215] <Configuration example 1 of light-emitting element> An example of the configuration of a light-emitting element is shown in Fig. 8(A). The light-emitting element shown in Fig. 8(A) has an anode 110 An EL layer including a light-emitting unit 1103 is sandwiched between the cathode 1102 and the cathode 1102 .

[0216] When a voltage higher than the threshold voltage of the light-emitting element is applied between the anode 1101 and the cathode 1102, Holes are injected into the EL layer from the anode 1101 side, and electrons are injected from the cathode 1102 side. The injected electrons and holes recombine in the EL layer, causing the luminescent material contained in the EL layer to emit light. do.

[0217] In this specification, a layer having one region where electrons and holes injected from both ends recombine. Alternatively, the laminated body is called a light-emitting unit. It can be said that there is one.

[0218] The light-emitting unit 1103 may include at least one light-emitting layer containing a light-emitting material. The layer other than the light-emitting layer may be a laminated layer. Substances with high hole injection properties, substances with high hole transport properties, substances with poor hole transport properties (blocking ) materials, materials with high electron transport properties, materials with high electron injection properties, and materials with bipolar properties (electron and A layer containing a substance having a high hole transporting property can be given as an example.

[0219] An example of a specific configuration of the light-emitting unit 1103 is shown in FIG. The optical unit 1103 includes a hole injection layer 1113, a hole transport layer 1114, a light emitting layer 1115, and an electron transport layer 1116. A electron transport layer 1116 and an electron injection layer 1117 are laminated in this order from the anode 1101 side. There are.

[0220] <Configuration example 2 of light-emitting element> Another example of the structure of the light-emitting element is shown in FIG. An EL layer including a light-emitting unit 1103 is sandwiched between a cathode 1101 and a cathode 1102. Furthermore, an intermediate layer 1104 is provided between the cathode 1102 and the light-emitting unit 1103. The light-emitting unit 1103 of the light-emitting element configuration example 2 includes the light-emitting element configuration example 1 described above. The same configuration as the light-emitting unit included in 1 can be applied. Please refer to the description in Example 1.

[0221] The intermediate layer 1104 is formed to include at least a charge generating region. For example, the first charge generation region 1104c may be laminated with a layer other than the first charge generation region 1104a. The electron relay layer 1104b and the electron injection buffer 1104a are arranged in this order from the cathode 1102 side. A laminated structure can be applied.

[0222] The behavior of electrons and holes in the intermediate layer 1104 will be explained. When a voltage higher than the threshold voltage of the light-emitting element is applied during time t02, the first charge generation region 110 In 4c, holes and electrons are generated, the holes move to the cathode 1102, and the electrons move to the electron relay layer The electron relay layer 1104b has high electron transport properties and moves to the first charge generation region 1104b. The electrons generated in the region 1104c are quickly transferred to the electron injection buffer 1104a. The injection buffer 1104a reduces the barrier for injecting electrons into the light-emitting unit 1103, Therefore, the electron injection efficiency into the first charge generation region 1104c is increased. The generated electrons pass through the electron relay layer 1104b and the electron injection buffer 1104a and are transported to the light-emitting unit. It is injected into the LUMO level of unit 1103.

[0223] The electron relay layer 1104b is electrically connected to the material constituting the first charge generating region 1104c. The substances that make up the molecule injection buffer 1104a react at the interface, damaging each other's functions. This can prevent interactions such as thawing.

[0224] The range of materials that can be used for the cathode of the light-emitting device of Configuration Example 2 is wider than that of the cathode of Configuration Example 1. The range of materials that can be used for the cathode in Example 2 is wider than that of the cathode in Example 2. This is because the intermediate layer only needs to receive the generated holes, and a material with a relatively large work function can be used. be.

[0225] <Configuration example 3 of light-emitting element> Another example of the configuration of the light-emitting element is shown in FIG. The device has an EL layer in which two light-emitting units are provided between an electrode 1101 and a cathode 1102 . Furthermore, there is a middle light emitting element between the first light emitting unit 1103a and the second light emitting unit 1103b. An interlayer 1104 is provided.

[0226] The number of light-emitting units provided between the anode and the cathode is not limited to two. The light emitting element shown as an example has a structure in which a plurality of light emitting units 1103 are stacked, that is, a so-called tandem type. It has the structure of a light-emitting element. However, for example, it is possible to form n layers (n is a natural number of 2 or more) between an anode and a cathode. When the light emitting unit 1103 is provided, the mth (m is a natural number, 1 or more and (n-1) or less) and an intermediate layer 1104 is provided between the (m+1)-th light-emitting unit and the (m+2)-th light-emitting unit. The configuration is to provide:

[0227] In addition, the light-emitting unit 1103 of the light-emitting element configuration example 3 includes the light-emitting element configuration example 1101 described above. The same configuration as that of Example 1 can be applied, and the intermediate layer 11 of Example 3 of the light-emitting device can also be applied. 04, the same configuration as in the above-mentioned configuration example 2 of the light-emitting element can be applied. For this, the description of Configuration Example 1 of the light-emitting element or Configuration Example 2 of the light-emitting element can be referred to.

[0228] Explain the behavior of electrons and holes in the intermediate layer 1104 provided between the light-emitting units. A voltage higher than the threshold voltage of the light-emitting element is applied between the anode 1101 and the cathode 1102. When this occurs, holes and electrons are generated in the intermediate layer 1104, and the holes are transferred to the emitter electrode 1103 provided on the cathode 1102 side. The electrons move to the light unit, and the electrons move to the light-emitting unit provided on the anode 1101 side. The holes injected into the light-emitting unit on the cathode side recombine with the electrons injected from the cathode side. The luminescent material contained in the luminescent unit emits light. The electrons injected into the light-emitting unit recombine with the holes injected from the anode side and are contained in the light-emitting unit. Therefore, the holes and electrons generated in the intermediate layer 1104 Each of these leads to light emission in a different light-emitting unit.

[0229] By providing the light-emitting units in contact with each other, the same structure as the intermediate layer is formed between them. In this case, the light emitting units can be provided in contact with each other. When a charge generation region is formed on one surface of the intermediate layer, the charge generation region is Since they function as light-emitting regions, the light-emitting units can be provided in contact with each other.

[0230] The light-emitting element configuration examples 1 to 3 can be used in combination with each other. For example, Alternatively, an intermediate layer may be provided between the cathode and the light-emitting unit of the third exemplary configuration of the light-emitting element.

[0231] In addition, by using multiple luminescent materials with different luminescent colors, the width of the emission spectrum can be expanded. For example, white light can be obtained by using a luminescent material. The layer is configured to have at least two layers containing the color components, and each layer exhibits a color that is complementary to the other. A specific complementary color relationship is, for example, blue and yellow. , or blue-green and red, etc.

[0232] Furthermore, when white light emission with good color rendering is desired, the emission spectrum should extend to the entire visible light range. For example, one light-emitting element may have a layer that emits blue light and a layer that emits green light. The light emitting layer may include a layer that emits light and a layer that emits red light.

[0233] This embodiment may be implemented in appropriate combination with other embodiment modes described in this specification. This can be done.

[0234] (Fourth embodiment) It can be suitably used in a region where a channel of the transistor exemplified in the above embodiment is formed. An example of a semiconductor that can be used is described below.

[0235] Oxide semiconductors have a large energy gap of 3.0 eV or more, making them suitable for The oxide semiconductor film obtained by processing under suitable conditions and sufficiently reducing the carrier density is applied. In a transistor with this structure, the leakage current between the source and drain in the off state (off current) can be made extremely low compared to conventional silicon-based transistors. .

[0236] As applicable oxide semiconductors, at least indium (In) or zinc (Zn ) is preferably contained. In particular, it is preferably contained In and Zn. As a stabilizer to reduce the variation in the electrical characteristics of transistors using In addition to these, gallium (Ga), tin (Sn), hafnium (Hf), zirconium (Zr ), titanium (Ti), scandium (Sc), yttrium (Y), lanthanides (e.g. For example, one selected from cerium (Ce), neodymium (Nd), and gadolinium (Gd), Alternatively, it is preferable that a plurality of types are contained.

[0237] For example, oxide semiconductors include indium oxide, tin oxide, zinc oxide, and oxides of binary metals. oxides such as In-Zn oxides, Sn-Zn oxides, Al-Zn oxides, and Zn-Mg oxides, Sn-Mg oxides, In-Mg oxides, In-Ga oxides, ternary metals In-Ga-Zn oxide (also written as IGZO), In-Al-Zn oxides, In-Sn-Zn oxides, Sn-Ga-Zn oxides, Al-Ga-Zn oxides Oxides, Sn-Al-Zn oxides, In-Hf-Zn oxides, In-Zr-Zn oxides oxides, In-Ti-Zn oxides, In-Sc-Zn oxides, In-Y-Zn oxides , In-La-Zn oxide, In-Ce-Zn oxide, In-Pr-Zn oxide, In-Nd-Zn oxide, In-Sm-Zn oxide, In-Eu-Zn oxide, I n-Gd-Zn oxide, In-Tb-Zn oxide, In-Dy-Zn oxide, In -Ho-Zn oxide, In-Er-Zn oxide, In-Tm-Zn oxide, In- Yb-Zn oxide, In-Lu-Zn oxide, and quaternary metal oxide In-Sn -Ga-Zn oxide, In-Hf-Ga-Zn oxide, In-Al-Ga-Zn oxide oxides, In-Sn-Al-Zn oxides, In-Sn-Hf-Zn oxides, In-Hf -Al-Zn oxides can be used.

[0238] Here, the In-Ga-Zn oxide is an oxide having In, Ga, and Zn as its main components. The ratio of In, Ga, and Zn does not matter. The metal elements may be included.

[0239] In addition, as an oxide semiconductor, InMO3(ZnO) m (m>0 and m is not an integer ) may be used, where M is selected from Ga, Fe, Mn and Co. The stabilizer element may be one or more metal elements, or the stabilizer element may be one or more metal elements. In addition, as an oxide semiconductor, In2SnO5(ZnO) n (n>0 and n is an integer ) may also be used.

[0240] For example, In:Ga:Zn=1:1:1, In:Ga:Zn=3:1:2, or I In-Ga-Zn oxides with an atomic ratio of n:Ga:Zn=2:1:3 and other oxides with similar compositions It is preferable to use an oxide.

[0241] The oxide semiconductor film may be single-crystal or non-single-crystal. In the latter case, it may be amorphous or polycrystalline. It may be crystalline. It may also be a structure containing a crystalline portion in an amorphous state, or a non-amorphous structure. Face is also fine.

[0242] Preferably, the oxide semiconductor film is CAAC-OS (C Axis Aligned C The film is a crystalline oxide semiconductor.

[0243] The CAAC-OS film will be described below.

[0244] The crystals in the CAAC-OS film are small enough to fit inside a cube with sides of less than 100 nm. In addition, transmission electron microscopes (TEM) The observation image using a ron microscope shows the crystalline part in the CAAC-OS film. The boundary between the grain and the crystalline part is not clear. Therefore, the grain boundary (also called the grain boundary) cannot be confirmed in the CAAC-OS film. Therefore, the decrease in electron mobility caused by the above phenomenon is suppressed.

[0245] The crystal part included in the CAAC-OS film has a c-axis that is normal to the surface on which the CAAC-OS film is formed. The three planes are aligned parallel to the normal vector of the wall or surface and perpendicular to the ab plane. It has a square or hexagonal atomic arrangement, and the metal atoms are layered or arranged in a direction perpendicular to the c-axis. In the crystal structure, metal atoms and oxygen atoms are arranged in layers. The orientation of the b-axis may be different. The range of 80° to 100° is also included. This also includes the range of -10° to 10°.

[0246] In the CAAC-OS film, the distribution of the crystal parts may not be uniform. In the process of forming the AC-OS film, when crystals are grown from the surface side of the oxide semiconductor film, The proportion of crystalline parts near the surface may be higher than that near the formation surface. By adding impurities to the AAC-OS film, the crystallization of the crystalline part in the impurity-doped region is enhanced. The crystallinity may also decrease.

[0247] The c-axis of the crystalline part in the CAAC-OS film is the normal vector of the surface on which the CAAC-OS film is formed. The shape of the CAAC-OS film (the shape of the film) is Depending on the cross-sectional shape of the surface or the cross-sectional shape of the surface, they may face in different directions. The c-axis direction of the crystalline part is the normal vector of the surface on which the CAAC-OS film is formed. The direction of the crystal is parallel to the normal vector of the crystal or the surface. Alternatively, it is formed by carrying out a crystallization treatment such as a heat treatment after the film formation.

[0248] When a CAAC-OS film is used as the oxide semiconductor film, the CAAC-OS film is formed. There are three ways to do this.

[0249] First, the oxide semiconductor film is formed at a film formation temperature of 100° C. or higher and 450° C. or lower. The c-axis of the crystal part included in the oxide semiconductor film is aligned with the normal vector of the surface where the film is formed or the This is a method for forming crystals aligned in a direction parallel to the normal vector.

[0250] The second method is to deposit a thin oxide semiconductor film and then heat treat it at a temperature between 200°C and 700°C. By performing the treatment, the c-axis of the crystal part included in the oxide semiconductor film is aligned with the normal vector of the surface where the film is formed. Alternatively, it is a method of forming crystals aligned in a direction parallel to the normal vector of the surface.

[0251] The third method is to deposit a thin oxide semiconductor film on the first layer and then heat it at a temperature between 200°C and 700°C. Then, a second oxide semiconductor film is formed. The c-axis of the crystal part to be formed is parallel to the normal vector of the surface on which it is formed or the normal vector of the surface. This is a method for forming uniform crystal parts.

[0252] The electrical characteristics of a transistor using a CAAC-OS film change when irradiated with visible or ultraviolet light. Therefore, the transistor has high reliability.

[0253] In addition, the CAAC-OS film can be formed by sputtering a polycrystalline oxide semiconductor target. It is preferable to use the sputtering target and form a film by sputtering. When ions collide with the sputtering target, the crystalline regions in the sputtering target form ab-plane Plate-shaped or pellet-shaped sputtered particles cleaved from the ab plane In this case, the plate-shaped or pellet-shaped sputtering particles may peel off. The molecules reach the deposition surface while maintaining their crystalline state, forming a CAAC-OS film. It is possible.

[0254] In addition, the following conditions are preferably applied to form the CAAC-OS film.

[0255] By reducing the amount of impurities mixed in during film formation, it is possible to prevent the crystal state from being destroyed by impurities. For example, the concentration of impurities (hydrogen, water, carbon dioxide, nitrogen, etc.) present in the film formation chamber can be In addition, the impurity concentration in the deposition gas can be reduced. A deposition gas having a temperature of −80° C. or lower, preferably −100° C. or lower is used.

[0256] In addition, by increasing the heating temperature of the surface to be film-formed (for example, the substrate heating temperature) during film formation, Specifically, the temperature of the surface on which the film is to be formed is The temperature is set to 100°C or higher and 740°C or lower, preferably 200°C or higher and 500°C or lower. By increasing the temperature of the surface during film formation, flat or pellet-shaped sputtering particles When the electrons reach the surface on which the film is to be formed, migration occurs on the surface on which the film is to be formed, and sputtering occurs. The flat surface of the particle adheres to the surface to be coated.

[0257] In addition, by increasing the oxygen ratio in the deposition gas and optimizing the power, plasma damage during deposition can be reduced. The oxygen ratio in the film forming gas is 30% by volume or more, preferably 100% by volume or more. Expressed as volume %.

[0258] As an example of a sputtering target, an In-Ga-Zn-O compound target is used. The details are shown below.

[0259] InO X powder, GaO Y Powder and ZnO Z The powders are mixed in a specified number of moles and pressurized. After that, it is heat-treated at a temperature between 1000℃ and 1500℃ to form polycrystalline In-G The target is a-Zn-O compound, where X, Y, and Z are any positive numbers. The predetermined mole ratio is, for example, InO X powder, GaO Y Powder and ZnO Z The powder, 1:1:1, 1:1:2, 1:3:2, 2:1:3, 2:2:1, 3:1:1, 3:1: Can be 2, 3:1:4, 4:2:3, 8:4:3, or any value close to these. The type of powder and the molar ratio of the powder to be mixed depend on the sputtering temperature to be prepared. You can change it as needed depending on the target.

[0260] This concludes the description of the CAAC-OS film.

[0261] Furthermore, when a large amount of hydrogen is contained in the oxide semiconductor film, hydrogen is bonded to the oxide semiconductor. As a result, some of the hydrogen atoms become donors, generating electrons as carriers. The threshold voltage of the transistor is shifted in the negative direction. In this case, the hydrogen concentration is 5×10 18 atoms / cm 3 Less than 1 x 10 18 atoms / cm 3 Less than or equal to 5 × 10 17 atoms / cm 3 Below, more good Preferably 1 x 10 16 atoms / cm 3 It is desirable that the oxide semiconductor The hydrogen concentration in the film was measured by secondary ion mass spectrometry (SIMS). It is measured by mass spectrometry.

[0262] After the oxide semiconductor film is formed, a dehydration treatment (dehydrogenation treatment) is performed to form the oxide semiconductor film. The hydrogen or water is removed from the fuel to make it highly purified and remove as few impurities as possible. In order to compensate for the oxygen vacancies increased by the dehydrogenation treatment, oxygen is added to the oxide semiconductor film. In this specification and the like, treatment for supplying oxygen to the oxide semiconductor film is preferably performed. The case where oxygen is supplied to the oxide semiconductor film is sometimes referred to as oxygen-adding treatment. When the amount is greater than the stoichiometric composition, it is sometimes referred to as a hyperoxygenation treatment.

[0263] In this way, the oxide semiconductor film is dehydrated by dehydration treatment (dehydrogenation treatment). By removing oxygen and filling the oxygen vacancies through oxygen addition treatment, the i-type (intrinsic) or In such an oxide semiconductor film, the oxide semiconductor film can be made to be as close to i-type as possible. In the case of , there are very few carriers derived from the donor (close to zero), and the carrier concentration is 1 × 1 0 14 / cm 3 Less than 1 x 10 12 / cm 3 less than 1×10 11 / cm 3 less than 1.45 × 10 10 / cm 3 It will be less than.

[0264] In this way, the hydrogen concentration is sufficiently reduced and highly purified, and sufficient oxygen is supplied. The oxide semiconductor film has a reduced defect level in the energy gap caused by oxygen vacancies. For example, a transistor with a channel length of 1 μm can achieve excellent off-state current characteristics. The off-state current per 1 μm of channel width at room temperature (25°C) is 100 yA ( 1yA (yoctoampere) is 1 x 10 -24 A) or less, preferably 10 yA or less Also, at 85°C, 100zA / μm (1zA (zeptoampere) is 1×10 -21 A ) or less, preferably 10 ... By using an oxide semiconductor film that is essentially i-type, a transistor with excellent off-state current characteristics can be obtained. You can get a star.

[0265] The oxide semiconductor film may have a structure in which a plurality of oxide semiconductor films are stacked.

[0266] For example, the oxide semiconductor film may be divided into a first oxide semiconductor film, a second oxide semiconductor film, and a third oxide semiconductor film. The oxide semiconductor films may have different compositions. The semiconductor film and the third oxide semiconductor film are made of oxides of ternary metals, and the second oxide semiconductor film is made of The film may be made of a binary metal oxide, or may be made of a first oxide semiconductor film and a third oxide semiconductor film. A binary metal oxide is used for the conductive film, and a ternary metal oxide is used for the second oxide semiconductor film. It is also possible to do so.

[0267] In addition, a structure of a first oxide semiconductor film, a second oxide semiconductor film, and a third oxide semiconductor film For example, the first oxide semiconductor film and the third oxide semiconductor film may have the same constituent elements but different compositions. The atomic ratio of the oxide semiconductor film is In:Ga:Zn=1:1:1, and the second oxide semiconductor The atomic ratio of the film may be In:Ga:Zn=3:1:2. The atomic ratio of the second oxide semiconductor film and the third oxide semiconductor film is In:Ga:Zn=1:3:2. The atomic ratio of the oxide semiconductor film may be In:Ga:Zn=3:1:2.

[0268] In this case, the content ratio of In to Ga in the second oxide semiconductor film may be set to In>Ga. The content ratios of In and Ga in the first oxide semiconductor film and the third oxide semiconductor film are set to In≦Ga. It is recommended to do so.

[0269] In oxide semiconductors, the s orbitals of heavy metals mainly contribute to carrier conduction, and the inclusion of In Increasing the ratio tends to increase the overlap of s orbitals, so In>Ga The oxide with this composition has a higher mobility than the oxide with a composition of In≦Ga. In addition, the formation energy of oxygen vacancies in Ga is larger than that in In, so oxygen vacancies are less likely to occur. The oxides with a composition of In≦Ga have more stable characteristics than the oxides with a composition of In>Ga. To have sexuality.

[0270] Note that if a film (such as a gate insulating film) that is in contact with the oxide semiconductor film and is different from the oxide semiconductor film is used, ) is formed, impurities are introduced into the oxide semiconductor film from a film formed in contact with the oxide semiconductor film. If silicon or carbon diffuses into the oxide semiconductor film, This may adversely affect the electrical characteristics of the transistor.

[0271] However, as described above, when oxide semiconductor films are formed into a stacked structure, oxide semiconductors having high mobility are used. The second oxide semiconductor film (i.e., an oxide semiconductor film having a composition of In>Ga) It has less oxygen vacancies than the oxide semiconductor film and has stable characteristics. an oxide semiconductor film (that is, an oxide semiconductor film having a composition of In≦Ga. The oxide semiconductor film 1 corresponds to the first oxide semiconductor film and the third oxide semiconductor film. By using a structure in which the film in contact with the oxide semiconductor film having high mobility is not in contact with the oxide semiconductor film having high mobility, The adverse effects on the electrical characteristics of transistors caused by impurity diffusion (such as a decrease in mobility) Therefore, the mobility and reliability of the transistor can be improved. It becomes possible.

[0272] This embodiment may be implemented in appropriate combination with other embodiment modes described in this specification. This can be done.

[0273] (Embodiment 5) In this embodiment, an electronic device including a display device including a touch sensor according to one embodiment of the present invention will be described. An example of the device will be described with reference to FIG.

[0274] The electronic device shown in FIG. 9(A) is an example of a portable information terminal.

[0275] The electronic device shown in FIG. 9A includes a housing 1011 and a panel 10 provided in the housing 1011. 12, a button 1013, and a speaker 1014.

[0276] The housing 1011 is provided with a connection terminal for connecting to an external device and operation buttons. It may be possible.

[0277] The button 1013 is provided on the housing 1011. For example, the button 1013 may be a power button. If so, pressing the button 1013 controls whether the electronic device is turned on or not. It is possible.

[0278] The speaker 1014 is provided in the housing 1011. The speaker 1014 outputs sound. do.

[0279] A microphone may be provided in the housing 1011. By doing so, for example, the electronic device shown in FIG. 9(A) can function as a telephone. do.

[0280] The electronic device shown in FIG. 9(A) may be, for example, a telephone, an electronic book, a personal computer, and and functions as one or more gaming machines.

[0281] Here, a display device equipped with a touch sensor according to one embodiment of the present invention is applied to the panel 1012. It is possible.

[0282] The electronic device shown in FIG. 9(B) is an example of a foldable information terminal.

[0283] The electronic device shown in FIG. 9B includes a housing 1021a, a housing 1021b, and a housing 1021a. a panel 1022a provided on the housing 1021b, a panel 1022b provided on the housing 1021b, and a shaft a section 1023, a button 1024, a connection terminal 1025, a recording medium insertion section 1026, and a switch. It is equipped with a speaker 1027.

[0284] The housing 1021 a and the housing 1021 b are connected by a shaft portion 1023 .

[0285] The electronic device shown in FIG. 9B has a shaft 1023, and therefore the panel 1022a and the panel 1022b can be folded facing each other.

[0286] The button 1024 is provided on the housing 1021b. For example, a button 1024 having a function as a power button may be provided. Thus, by pressing the button 1024, the supply of power supply voltage to the electronic device can be controlled.

[0287] The connection terminal 1025 is provided on the housing 1021a. In addition, the connection terminal 1025 may be provided between the housing 1021a and the housing 1021b. A plurality of connection terminals 1025 may be provided on one or both of the terminals 021b. This is a terminal for connecting the electronic device shown in FIG. 1 to other devices.

[0288] The recording medium insertion section 1026 is provided in the housing 1021a. An insertion section 1026 may be provided. For example, a plurality of recording medium inserts may be provided on one or both of the housing 1021a and the housing 1021b. By inserting a card-type recording medium into the slot, the data on the card-type recording medium can be transferred to the electronic device. Data can be read from or written to the card-type recording medium within the electronic device.

[0289] The speaker 1027 is provided in the housing 1021b. The housing 1021a may be provided with a speaker 1027.

[0290] A microphone may be provided on the housing 1021a or the housing 1021b. By providing a microphone in the housing 1021b, the electronic device shown in FIG. 9B can be used as a It can function as a telephone.

[0291] The electronic device shown in FIG. 9(B) is, for example, a telephone, an electronic book, a personal computer, and and functions as one or more gaming machines.

[0292] Here, the touch sensor of one embodiment of the present invention is provided on the panel 1022a and the panel 1022b. A display device equipped with the same can be applied.

[0293] The electronic device shown in FIG. 9(C) is an example of a stationary information terminal. The child device includes a housing 1031, a panel 1032 provided on the housing 1031, and a button 103 3 and a speaker 1034.

[0294] A panel similar to the panel 1032 may be provided on the deck portion 1035 of the housing 1031. .

[0295] Furthermore, the housing 1031 is provided with a ticket output unit for outputting tickets, a coin input unit, a bill input unit, etc. may be provided.

[0296] The button 1033 is provided on the housing 1031. For example, the button 1033 may be a power button. In this case, by pressing the button 1033, the supply of power supply voltage to the electronic device can be controlled.

[0297] The speaker 1034 is provided in the housing 1031. The speaker 1034 outputs sound. To exert effort.

[0298] The electronic device shown in FIG. 9(C) is, for example, an automatic teller machine, a machine for ordering tickets, etc. Functions as an information communication terminal (also called a multimedia station) or a gaming machine It has.

[0299] Here, a display device including a touch sensor according to one embodiment of the present invention is applied to the panel 1032. It is possible.

[0300] FIG. 9(D) is an example of a stationary information terminal. The electronic device shown in FIG. 9(D) has a housing. 1041, a panel 1042 provided on the housing 1041, and a support for supporting the housing 1041. It includes a base 1043, a button 1044, a connection terminal 1045, and a speaker 1046. do.

[0301] In addition to the connection terminal 1045, the housing 1041 may have a connection terminal for connecting to an external device. A child may be provided.

[0302] The button 1044 is provided on the housing 1041. For example, the button 1044 may be a power button. In this case, by pressing the button 1044, the supply of power supply voltage to the electronic device can be controlled.

[0303] The connection terminal 1045 is provided on the housing 1041. The connection terminal 1045 is shown in FIG. For example, the connection terminal 1045 is a terminal for connecting the electronic device shown in FIG. When the electronic device shown in FIG. 9(D) is connected to a personal computer, An image corresponding to a data signal input from the computer can be displayed on the panel 1042. For example, the panel 1042 of the electronic device shown in FIG. 9(D) is connected to a panel of another electronic device. If it is larger, the image displayed on the other electronic device can be enlarged, and multiple people can use it at the same time. It becomes easier to see.

[0304] The speaker 1046 is provided in the housing 1041. The speaker 1046 outputs sound. To exert effort.

[0305] The electronic device shown in FIG. 9(D) is, for example, an output monitor, a personal computer, and a television. It functions as one or more of the vision devices.

[0306] Here, a display device equipped with a touch sensor according to one embodiment of the present invention is applied to the panel 1042. It is possible.

[0307] The above is a description of the example of the electronic device shown in FIG.

[0308] As described with reference to FIG. 9, the electronic device according to the present embodiment has a panel including one of the elements of the present invention. Therefore, the electronic device itself is lightweight. It has become lighter, smaller, and thinner.

[0309] In addition, the display device of one embodiment of the present invention can be made flexible because the total thickness thereof is extremely thin. Therefore, the electronic device described above may have a configuration including a panel with a curved surface. , and may also be configured with a bendable panel.

[0310] This embodiment may be implemented in appropriate combination with other embodiment modes described in this specification. This can be done. [Explanation of symbols]

[0311] 100 display device 101 Substrate 102 Support substrate 103 Element Layer 104 Adhesive layer 105 Adhesive layer 110 Display device 111 Substrate 112 Support substrate 113 Sensor Layer 114 Sensor Electrode 115 Sensor Electrode 116 Insulating Layer 120 Display device 121 PCB 122 Support substrate 123 Color filter layer 124 Red color filter 125 Green color filter 126 Blue color filter 127 Black Matrix 128 Insulating Layer 130 Display device 200 Display device 201 Display section 202 Touch Sensor 203 Contact part 204 FPC 205 External connection electrode 206 Wiring 207 Wiring 208 Connection Layer 209 Reinforcement 211 Pixel section 212 Source driver circuit 213 Gate drive circuit 220 Light-emitting element 221 Electrode layer 222 EL layer 223 Electrode layer 231 Transistor 232 transistors 233 Transistor 234 transistor 235 Insulating Layer 236 Spacer 237 Insulating Layer 238 Insulating Layer 239 Insulating Layer 241 Insulating Layer 242 Black Matrix 243 Color Filter 244 electrode 245 Conductive particles 246 Resin layer 250 Liquid Crystal Devices 251 Electrode layer 252 LCD 253 Electrode layer 254 Spacer 255 Overcoat 256 transistors 1011 Case 1012 Panel 1013 Button 1014 Speaker 1021a housing 1021b housing Panel 1022a 1022b Panel 1023 Shaft 1024 buttons 1025 connection terminal 1026 Recording medium insertion section 1027 Speaker 1031 Case 1032 Panel 1033 Button 1034 Speaker 1035 Deck section 1041 Housing 1042 Panel 1043 Support stand 1044 buttons 1045 connection terminal 1046 Speaker 1101 Anode 1102 Cathode 1103 Lighting unit 1103a Light-emitting unit 1103b Light-emitting unit 1104 Middle class 1104a Electron injection buffer 1104b Electronic Relay Layer 1104c Charge generation region 1113 Hole injection layer 1114 Hole transport layer 1115 Light-emitting layer 1116 Electron transport layer 1117 Electron injection layer

Claims

1. a step of bonding a first substrate, which is fixed on a first support substrate and has an element layer including a light-emitting element provided on a surface that does not face the first support substrate, to a second substrate, which is fixed on a second support substrate and has a sensor layer and a color filter layer stacked on a surface that does not face the second support substrate, using an adhesive layer so that the element layer and the sensor layer face each other; After bonding the first substrate and the second substrate, peeling the first support substrate between the first substrate and the first support substrate; and peeling the second support substrate between the second substrate and the second support substrate, The first substrate and the second substrate are glass substrates having a thickness of 10 μm or more and 200 μm or less, A method for manufacturing a display device, wherein the first supporting substrate and the second supporting substrate are made of a material thicker than the glass substrate.

2. In claim 1, the glass substrate is fixed by being in close contact with the base material, The method for manufacturing a display device, wherein the glass substrate and the base material each have a surface roughness of 2 nm or less at the contact surface.

3. In claim 1 or claim 2, a resin containing an organic compound or a silicon compound provided on the substrate; The method for manufacturing a display device, wherein the resin and the glass substrate are closely attached to each other, thereby fixing the glass substrate to the base material.

Images