Light-emission device

Abstract

To provide a display apparatus that has a function of emitting visible light and infrared light and a function of detecting light.SOLUTION: There is provided a display apparatus in which a display part has a first light-emitting device, a second light-emitting device, and a light-receiving device. The first light-emitting device emits both visible light and infrared light, and the second light-emitting device emits visible light. The light-receiving device has a function of absorbing at least a part of the visible light and the infrared light. The first light-emitting device has a first pixel electrode, a first light-emitting layer, a second light-emitting layer, and a common electrode. The second light-emitting device has a second pixel electrode, a third light-emitting layer, and a common electrode. The light-receiving device has a third pixel electrode, an active layer, and a common electrode. The first light-emitting layer has a light-emitting material that emits the infrared light. The second and third light-emitting layers have light-emitting materials that emit visible light with wavelengths different from each other. The active layer has an organic compound.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] One embodiment of the present invention relates to a light-emitting device, a light-emitting device, a light-emitting module, an electronic device, and a lighting device. One embodiment of the present invention relates to a display device, a display module, and an electronic device. One aspect relates to a display device having a light receiving device and a light emitting device.

[0002] Note that one embodiment of the present invention is not limited to the above technical field. Examples of the semiconductor device include a semiconductor device, a display device, a light-emitting device, a power storage device, a memory device, an electronic device, a lighting device, Input devices (e.g., touch sensors), input / output devices (e.g., touch panels), etc. These driving methods or manufacturing methods can be cited as examples. [Background technology]

[0003] In recent years, display devices are expected to be used in a variety of applications. For example, the use of large display devices Examples include home television equipment (also called televisions or television receivers), digital Digital Signage, PID (Public Identification Number) c Information Display) and other mobile information terminals. As a result, development of smartphones and tablet devices equipped with touch panels is underway.

[0004] As a display device, for example, a light-emitting device having a light-emitting device (also called a light-emitting element) has been developed. Electroluminescence (hereinafter referred to as Light-emitting devices (EL devices or EL elements) that utilize the EL phenomenon are thin films. It is easy to reduce the weight of the mold, it can respond quickly to input signals, and it uses a low-voltage DC power supply. It has features such as being drivable and is applied to display devices. A flexible light-emitting device using an organic EL device (also called an organic EL element) is disclosed. It has been done.

[0005] In addition, image sensors are used in a variety of applications, including personal authentication, defect analysis, medical diagnosis, and security-related applications. Image sensors use different wavelengths of light sources depending on the application. Image sensors detect light from a wide range of wavelengths, including visible light, short wavelength light such as X-rays, and near-infrared light. Light of various wavelengths is used, including light of long wavelengths.

[0006] Light-emitting devices are also being considered for use as light sources for the image sensors described above. [Prior art documents] [Patent documents]

[0007] [Patent Document 1] Japanese Patent Application Laid-Open No. 2014-197522 Summary of the Invention [Problem to be solved by the invention]

[0008] One aspect of the present invention is to provide a light-emitting device that can emit visible light and infrared light. An object of one embodiment of the present invention is to provide a highly convenient light-emitting device. An object of one embodiment of the present invention is to provide a multifunctional light-emitting device. An object of one embodiment is to provide a novel light-emitting device.

[0009] An object of one embodiment of the present invention is to provide a display device having a light detection function. One aspect of the present invention provides a display device having a function of emitting visible light and infrared light and a function of detecting light. An object of one embodiment of the present invention is to provide a highly convenient display device. An object of one embodiment of the present invention is to provide a multifunctional display device. An object of one embodiment of the present invention is to provide a novel display device.

[0010] Note that the description of these problems does not preclude the existence of other problems. It is not necessary to solve all of these problems. From the description of the section, it is possible to extract other issues. [Means for solving the problem]

[0011] One embodiment of the present invention is a light-emitting device including a first light-emitting device and a second light-emitting device. The first light-emitting device includes a first pixel electrode, a first light-emitting layer, a second light-emitting layer, and a common electrode. The first light-emitting layer and the second light-emitting layer are respectively connected to the first pixel electrode and the common electrode. The second light-emitting device is located between the second pixel electrode, the third light-emitting layer, and the common electrode. The third light-emitting layer is located between the second pixel electrode and the common electrode. The light emitting layer includes a light emitting material that emits infrared light. The second light emitting layer and the third light emitting layer each include It has luminescent materials that emit visible light of different wavelengths.

[0012] For example, the first pixel electrode has a function of reflecting visible light and infrared light, and the common electrode has a function of reflecting visible light and infrared light. and infrared light, and the second light-emitting layer has a light-emitting material that emits blue light. Preferably, the first light-emitting layer is located between the first pixel electrode and the second light-emitting layer. That is, when the light emitted from the first light-emitting device is extracted to the common electrode side, the first light-emitting layer is , preferably located between the first pixel electrode and the second light-emitting layer.

[0013] The first light-emitting layer has a peak wavelength λ a The second light-emitting layer emits light with a peak wavelength λ b emits light of In this case, the light-emitting region of the first light-emitting layer is located at an optical distance λ from the first pixel electrode. a / 4 or its The light-emitting region of the second light-emitting layer is preferably located in the vicinity of the first pixel electrode. Distance is 3λ b It is preferably located at or near / 4.

[0014] The first light-emitting device further comprises one or both of a hole transport layer and an electron transport layer. It is preferable that the first light-emitting layer has a peak wavelength λ a The second light-emitting layer emits light with a peak wavelength λ b When the hole transport layer emits light of wavelength λ b The ordinary refractive index for light with wavelength λ a In the light of The refractive index of the electron transport layer is preferably 0.1 or more higher than the refractive index of ordinary light at wavelength λ b The ordinary refractive index for light with wavelength λ a is 0.1 or more higher than the ordinary refractive index for light It is preferable.

[0015] For example, the first pixel electrode has a function of transmitting visible light and infrared light, and the common electrode has a function of transmitting visible light and infrared light. and infrared light, and the second light-emitting layer has a light-emitting material that emits blue light. Preferably, the second light-emitting layer is located between the first pixel electrode and the first light-emitting layer. That is, when the light emitted from the first light-emitting device is extracted to the first pixel electrode side, the light emitted from the second light-emitting device is extracted to the first pixel electrode side. The optical layer is preferably located between the first pixel electrode and the first light-emitting layer.

[0016] The first light-emitting layer has a peak wavelength λ a The second light-emitting layer emits light having a peak wavelength λ b Emits light In this case, the light emitting region of the first light emitting layer is located at an optical distance of 3λ from the first pixel electrode. a / 4Also is preferably located in the vicinity thereof, and the light emitting region of the second light emitting layer is The optical distance is λ b It is preferably located at or near / 4.

[0017] Preferably, the first light-emitting device has the function of emitting both visible light and infrared light; The second light-emitting device preferably has the function of emitting visible light.

[0018] The first light-emitting device has a charge generating layer located between a first light-emitting layer and a second light-emitting layer. It is preferable that

[0019] The first light-emitting device and the second light-emitting device each have a micro-optical resonator structure. The micro-optical resonator structure of the first light-emitting device preferably emits red, green, or blue light. It is preferable that the second light-emitting device has a configuration that enhances both color light and infrared light. The micro-optical resonator structure preferably has a configuration that enhances red, green, or blue light. It's nice.

[0020] The light-emitting device according to one embodiment of the present invention preferably further includes a third light-emitting device. The third light-emitting device has a third pixel electrode, a first light-emitting layer, a second light-emitting layer, and a common electrode. The first light-emitting device and the third light-emitting device each have a micro-optical resonator structure. The micro-optical resonator structure of the first light-emitting device preferably enhances infrared light. The micro-optical resonator structure of the third light-emitting device preferably has red, green Preferably, the configuration is such that the light emitted from the light source is intensified in a color or blue.

[0021] The first light-emitting device and the second light-emitting device preferably further include a common layer. The common layer is formed in a region between the first pixel electrode and the common electrode and in a region between the second pixel electrode and the common electrode. and a region located between the electrode.

[0022] One embodiment of the present invention is a light-emitting device including a first electrode, a first light-emitting layer, a second light-emitting layer, and a second electrode, The light-emitting device has the function of emitting both infrared light and visible light. The two light-emitting layers are each located between a first electrode and a second electrode. The first light-emitting layer is The first light-emitting layer contains a light-emitting material that emits infrared light. The second light-emitting layer contains a light-emitting material that emits visible light.

[0023] The first electrode has a function of reflecting visible light and infrared light, and the second electrode has a function of absorbing visible light and infrared light. When the first light-emitting layer has a light-transmitting function, the first light-emitting layer is located between the first electrode and the second light-emitting layer. In this case, it is preferable that the second light-emitting layer contains a light-emitting material that emits blue light. is preferred.

[0024] The first light-emitting layer has a peak wavelength λ a The second light-emitting layer emits light having a peak wavelength λ b Emits light In this case, the light emitting region of the first light emitting layer is located at an optical distance λ from the first electrode. a / 4 or its The light emitting region of the second light emitting layer is preferably located in the vicinity of the first electrode. is 3λ bIt is preferably located at or near / 4.

[0025] The light-emitting device according to one embodiment of the present invention further comprises one or both of a hole transport layer and an electron transport layer. It is preferable that the first light-emitting layer has a peak wavelength λ a The second light-emitting layer emits a peak light. wavelength λ b When the hole transport layer emits light of wavelength λ b The ordinary refractive index for light of wavelength λ a The refractive index of the electron transport layer is preferably at least 0.1 higher than the refractive index of the electron transport layer. is the wavelength λ b The ordinary refractive index for light with wavelength λ a 0.1 times the ordinary refractive index for light It is preferable that the value is greater than or equal to 1000.

[0026] The first electrode has a function of reflecting visible light and infrared light, and the second electrode has a function of absorbing visible light and infrared light. When the second light-emitting layer has a light-transmitting function, the second light-emitting layer is located between the first electrode and the first light-emitting layer. It is preferable that

[0027] The light-emitting device according to one embodiment of the present invention further includes a first light-emitting layer and a second light-emitting layer. It is preferred that the charge generating layer has a charge generating layer.

[0028] A light-emitting device according to one embodiment of the present invention emits both red, green, or blue light and infrared light. It is preferable to have a micro-optical resonator structure with a configuration that enhances the resonant wavelength.

[0029] One embodiment of the present invention is a light-emitting device including a light-emitting device having any of the above structures in a light-emitting portion.

[0030] One embodiment of the present invention is a display device including a first light-emitting device, a second light-emitting device, and a light-receiving device. The first light-emitting device emits both visible light and infrared light. The second light-emitting device has a function of emitting visible light. The light-receiving device has a function of The first light-emitting device has a function of absorbing at least a part of visible light and infrared light. The pixel electrode includes a first pixel electrode, a first light-emitting layer, a second light-emitting layer, and a common electrode. The first and second light-emitting layers are respectively located between the first pixel electrode and the common electrode. The optical device includes a second pixel electrode, a third light-emitting layer, and a common electrode. , located between the second pixel electrode and the common electrode. The light-receiving device is connected to the third pixel electrode, the active The active layer is located between the third pixel electrode and the common electrode. The first light-emitting layer contains a light-emitting material that emits infrared light. The second and third light-emitting layers contain a light-emitting material that emits infrared light. The active layer contains an organic compound.

[0031] One embodiment of the present invention is a display device including a first light-emitting device, a second light-emitting device, and a light-receiving device. The first light-emitting device emits both visible light and infrared light. The second light-emitting device has a function of emitting visible light. The light-receiving device has a function of The first light-emitting device has a function of absorbing at least a part of visible light and infrared light. , a first pixel electrode, a common layer, a first light-emitting layer, a second light-emitting layer, and a common electrode. The first light-emitting layer and the second light-emitting layer are each located between the first pixel electrode and the common electrode. The second light-emitting device has a second pixel electrode, a common layer, a third light-emitting layer, and a common electrode. The third light-emitting layer is located between the second pixel electrode and the common electrode. The active layer is connected to the third pixel electrode, a common layer, an active layer, and a common electrode. The first light-emitting layer is located between the electrode and the second light-emitting layer. The first light-emitting layer has a light-emitting material that emits infrared light. The first and third light-emitting layers each contain light-emitting materials that emit visible light at different wavelengths. The common layer includes an organic compound. The common layer includes a region located between the first pixel electrode and the common electrode. a region located between the second pixel electrode and the common electrode, and a region located between the third pixel electrode and the common electrode; and a region located at

[0032] A preferred configuration of the first light-emitting device and the second light-emitting device of the display device is The configuration is similar to that of the first light-emitting device and the second light-emitting device included in the optical device.

[0033] Preferably, the display unit further comprises a third light-emitting device. The first light-emitting device has a fourth pixel electrode, a first light-emitting layer, a second light-emitting layer, and a common electrode. Preferably, the first light-emitting device and the third light-emitting device each have a micro-optical resonator structure. The micro-optical resonator structure of the first light-emitting device is preferably configured to intensify infrared light. Preferably, the micro-optical resonator structure of the third light-emitting device emits red, green, or blue light. It is preferable that the configuration is such that the above-mentioned

[0034] The display unit preferably further includes a lens. The lens has a portion overlapping with the light receiving device. The light transmitted through the lens is incident on the light receiving device.

[0035] The display section preferably further includes a partition wall. The partition wall is formed between the edge of the first pixel electrode and the edge of the second pixel electrode. It is preferable that the end of the first pixel electrode and the end of the third pixel electrode are covered. The first pixel electrode and the second pixel electrode are electrically insulated from each other by the partition wall. Preferably, the partition absorbs at least a portion of the light emitted by the first light-emitting device. It is preferable that the function be

[0036] The display unit preferably further includes a colored layer. The colored layer is formed on a portion of the display unit that contacts the side surface of the partition wall. The colored layer preferably has a color filter or a black matrix. It is preferable.

[0037] The display unit is preferably flexible.

[0038] One embodiment of the present invention is a flexible display device including a light-emitting device or a display device having any of the above structures. Printed circuit board (Flexible Printed Circuit, hereafter referred to as FPC) Connectors such as TCP (Tape Carrier Package) Installed module or COG (Chip On Glass) type or Modules with integrated circuits (ICs) mounted using COF (Chip On Film) methods, etc. In this specification and the like, a module having a light-emitting device is referred to as a light-emitting module. A module having a display device is sometimes called a display module. .

[0039] One aspect of the present invention is a device including the above module, an antenna, a battery, a housing, a camera, and a speaker. , a microphone, and an operation button. [Effects of the Invention]

[0040] According to one embodiment of the present invention, a light-emitting device that can emit visible light and infrared light can be provided. According to one embodiment of the present invention, a highly convenient light-emitting device can be provided. According to one embodiment of the present invention, a novel light-emitting device can be provided.

[0041] According to one embodiment of the present invention, a display device having a light detection function can be provided. This makes it possible to provide a display device that has the function of emitting visible light and infrared light and the function of detecting light. According to one embodiment of the present invention, a highly convenient display device can be provided. According to one embodiment of the present invention, a novel display device can be provided.

[0042] The description of these effects does not preclude the existence of other effects. However, it is not necessary to have all of these effects. , it is possible to extract effects other than these. [Brief explanation of the drawings]

[0043] [Figure 1] 1A to 1F are cross-sectional views showing an example of a light emitting device. [Figure 2] 2A to 2E are top views showing examples of pixels. [Figure 3] 3A to 3D are diagrams illustrating the layered structure of the light-emitting device. [Figure 4] 4A to 4D are diagrams illustrating the layered structure of the light-emitting device. [Figure 5] 5A to 5D are diagrams illustrating the positional relationship of the light emitting regions. [Figure 6] Figures 6A and 6B are cross-sectional views showing an example of a light-emitting device, Figures 6C and 6D are top views showing an example of a pixel, and Figure 6E is a diagram illustrating the layered structure of a light-emitting device. [Figure 7] 7A to 7C are cross-sectional views showing an example of a light emitting device. [Figure 8] 8A to 8C are cross-sectional views showing an example of a light emitting device. [Figure 9] FIG. 9 is a perspective view showing an example of a light emitting device. [Figure 10] 10A and 10B are cross-sectional views showing an example of a light emitting device. [Figure 11] 11A is a cross-sectional view showing an example of a light-emitting device, and FIG. 11B is a cross-sectional view showing an example of a transistor. [Figure 12] 12A to 12D are cross-sectional views showing an example of a display device. [Figure 13] 13A to 13E are top views showing examples of pixels. [Figure 14] 14A to 14C are cross-sectional views showing an example of a display device. [Figure 15] 15A to 15C are cross-sectional views showing an example of a display device. [Figure 16] FIG. 16 is a cross-sectional view showing an example of a display device. [Figure 17] 17A and 17B are cross-sectional views showing an example of a display device. [Figure 18] 18A is a cross-sectional view illustrating an example of a display device, and FIG. 18B is a cross-sectional view illustrating an example of a transistor. [Figure 19] FIG. 19 is a cross-sectional view showing an example of a display device. [Figure 20] 20A and 20B are circuit diagrams showing examples of pixel circuits. [Figure 21] 21A and 21B are diagrams showing an example of an electronic device. [Figure 22] 22A to 22D are diagrams showing examples of electronic devices. [Figure 23] 23A to 23F are diagrams showing examples of electronic devices. [Figure 24] 24A to 24D are diagrams showing a light-emitting device according to an embodiment. [Figure 25] FIG. 25 is a diagram showing the emission spectrum used in the calculation of Example 1. [Figure 26] FIG. 26 is a diagram showing an emission spectrum that is a calculation result of Example 1. [Figure 27] FIG. 27 is a diagram showing the CIE1931 chromaticity coordinates that are the calculation results of Example 1. [Figure 28] FIG. 28 is a diagram showing the refractive index used in the calculation of Example 1. [Figure 29] FIG. 29 is a diagram showing the emission spectrum used in the calculation of Example 2. [Figure 30] FIG. 30 is a diagram showing an emission spectrum that is a calculation result of Example 2. [Figure 31] FIG. 31 is a diagram showing an emission spectrum obtained as a result of calculation in Example 2. In FIG. [Figure 32] FIG. 32 is a diagram showing the CIE1931 chromaticity coordinates that are the calculation results of Example 2. [Figure 33] FIG. 33 is a diagram showing the CIE1931 chromaticity coordinates that are the calculation results of Example 2. [Figure 34] FIG. 34 is a diagram showing the emission spectrum used in the calculation of Example 3. [Figure 35] FIG. 35 is a diagram showing an emission spectrum obtained as a result of calculation in Example 3. [Figure 36] FIG. 36 is a diagram showing the CIE1931 chromaticity coordinates that are the calculation results of Example 3. DETAILED DESCRIPTION OF THE INVENTION

[0044] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. The present invention is not limited to the above embodiments, and various changes and modifications may be made in the form and details thereof without departing from the spirit and scope of the present invention. It will be readily understood by those skilled in the art that the present invention can be achieved by the following embodiments. It should not be construed as being limited to the contents described.

[0045] In the configuration of the invention described below, the same parts or parts having similar functions are designated by the same reference numerals. The same reference numerals are used in common among different drawings, and the repeated explanations thereof will be omitted. When referring to a function, the hatch pattern may be the same and no particular symbol may be added.

[0046] In addition, the position, size, range, etc. of each component shown in the drawings are not necessarily the same as in reality for ease of understanding. Therefore, the disclosed invention may not necessarily represent the position, size, range, etc. Furthermore, the present invention is not limited to the position, size, range, etc. disclosed in the drawings.

[0047] The words "film" and "layer" may be used interchangeably depending on the situation. For example, the term "conductive layer" can be used interchangeably with the term "conductive film." Alternatively, for example, the term "insulating film" can be changed to " The term "insulating layer" may be changed to "insulating layer."

[0048] (Embodiment 1) In this embodiment, a light-emitting device according to one embodiment of the present invention will be described with reference to FIGS.

[0049] A light-emitting device according to one embodiment of the present invention includes a light-emitting device that emits visible light and infrared light, and a light-emitting device that emits visible light. The visible light is a light emitting device having a wavelength of 400 nm or more and less than 750 nm. Examples of infrared light include near-infrared light, such as red, green, and blue light. An example of the light source is external light, specifically light with a wavelength of 750 nm or more and 1300 nm or less.

[0050] A light-emitting device according to one embodiment of the present invention includes a first light-emitting device and a second light-emitting device. The first light-emitting device includes a first pixel electrode, a first light-emitting layer, a second light-emitting layer, and a common electrode. The first light-emitting layer and the second light-emitting layer are respectively connected to the first pixel electrode and the common electrode. The second light-emitting device includes a second pixel electrode, a third light-emitting layer, and a common electrode. The third light-emitting layer is located between the second pixel electrode and the common electrode. The first light-emitting layer The second light-emitting layer and the third light-emitting layer each have a different light-emitting material that emits infrared light. The light-emitting material has a wavelength that is visible.

[0051] The light-emitting material of the first light-emitting layer has a maximum peak wavelength (which can also be said to be the wavelength with the highest peak intensity). It is preferable that the second light-emitting layer and the second light-emitting layer emit light having a wavelength of 750 nm or more and 1300 nm or less. The third light-emitting layer has a light-emitting material having a maximum peak wavelength of 400 nm or more and 750 nm or less. It is preferable that the wavelength of the light emitted is equal to or less than the peak wavelength. Even in this case, it can be rephrased as the maximum peak wavelength.

[0052] The light-emitting device of one embodiment of the present invention may include a sensor (for example, an image sensor or an optical touch sensor). The light-emitting device according to one embodiment of the present invention can be used as a light source for visible light and infrared light. Since it can emit both visible light and infrared light, it can be used as a sensor. It can be combined with both visible light and infrared light sensors, making it highly convenient. It can also be used as a light source for sensors that use other light sources, improving the functionality of the sensors. Furthermore, the light-emitting device of one embodiment of the present invention can emit visible light. It can be used as a display device.

[0053] In the light-emitting device according to one embodiment of the present invention, one subpixel emits both visible light and infrared light. For example, three LEDs each emitting red, green, or blue light can be used. Any of the sub-pixels may be configured to emit infrared light. By also serving as a sub-pixel that emits infrared light, there is no need to provide a separate sub-pixel that emits infrared light. Therefore, the light emitting device can be made to emit visible light and infrared light without increasing the number of sub-pixels in one pixel. This can prevent a decrease in the aperture ratio of the pixel, The luminous efficiency of the light emitting device can be improved.

[0054] Furthermore, the light-emitting device of one embodiment of the present invention includes a light-emitting device that emits visible light and infrared light, and a light-emitting device that emits visible light. The light-emitting device that emits light can have layers with a common configuration. The light emitting device can be given the function of emitting infrared light without significantly increasing the manufacturing cost. For example, at least one of a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer , a light-emitting device that emits visible light and infrared light, and a light-emitting device that emits visible light, The configuration can be as follows.

[0055] 1A to 1F show cross-sectional views of a light-emitting device according to one embodiment of the present invention.

[0056] Light emitting devices 40A to 40F shown in FIGS. 1A to 1F emit red (R) light, It is configured to emit green (G) light, blue (B) light, and infrared (IR) light.

[0057] The light emitting devices 40A to 40F emit any one of red light, green light, and blue light. The light-emitting device is configured to emit one light and also infrared light.

[0058] The light-emitting device according to one embodiment of the present invention emits light in a direction opposite to the substrate on which the light-emitting device is formed. top-emission type, which emits light toward the substrate on which the light-emitting device is formed; and bottom-emission type, which emits light toward the substrate on which the light-emitting device is formed. It can be either a one-emission type or a dual-emission type that emits light from both sides. .

[0059] 1A to 1F show a light emitting device in which the light emitting device emits light toward the substrate 152 side.

[0060] The light emitting device 40A shown in FIG. 1A includes a light emitting device 47R between a substrate 151 and a substrate 152. , light emitting device 47G, and light emitting device 47B.

[0061] The light emitting device 40B shown in FIG. 1B has the same configuration as the light emitting device 40A, but also has a substrate 151 and a substrate 15 Between them is a layer 45 which contains a transistor.

[0062] In the light emitting device 40A and the light emitting device 40B, the light emitting device 47R emits red (R) light and The light-emitting device 47G can emit both green (G) and infrared (IR) light. The light-emitting device 47B can emit blue (B) light.

[0063] The light emitting device 40C shown in FIG. 1C includes a light emitting device 47R between a substrate 151 and a substrate 152. , light emitting device 47G, and light emitting device 47B.

[0064] The light emitting device 40D shown in FIG. 1D has the same configuration as the light emitting device 40C, but also has a substrate 151 and a substrate 15 Between them is a layer 45 which contains a transistor.

[0065] In the light emitting devices 40C and 40D, the light emitting device 47G emits green (G) light. The light-emitting device 47R can emit both red (R) and infrared (IR) light. The light-emitting device 47B can emit blue (B) light.

[0066] The light emitting device 40E shown in FIG. 1E includes a light emitting device 47R between a substrate 151 and a substrate 152. , light emitting device 47G, and light emitting device 47B.

[0067] The light emitting device 40F shown in FIG. 1F has the same configuration as the light emitting device 40E, but also has a substrate 151 and a substrate 15 Between them is a layer 45 which contains a transistor.

[0068] In the light emitting devices 40E and 40F, the light emitting device 47B emits blue (B) light and The light-emitting device 47R can emit both red (R) and infrared (IR) light. The light-emitting device 47G can emit green (G) light.

[0069] The transistor-containing layer 45 includes a plurality of transistors. The layer 45 includes a transistor that is electrically connected to the light emitting device.

[0070] The maximum peak wavelength (first peak wavelength) in the visible light region of the emission spectrum of the light-emitting device 47B The wavelength (also referred to as the wavelength) can be, for example, 400 nm or more and 480 nm or less.

[0071] The maximum peak wavelength (second peak wavelength) in the visible light region of the emission spectrum of the light-emitting device 47R (also referred to as "optical wavelength") can be, for example, equal to or greater than 580 nm and less than 750 nm.

[0072] The maximum peak wavelength (third peak wavelength) in the visible light region of the emission spectrum of light-emitting device 47G The peak wavelength (also referred to as the peak wavelength) can be a wavelength between the first and second peak wavelengths. For example, the third peak wavelength can be equal to or greater than 480 nm and less than 580 nm.

[0073] The maximum peak wavelength (fourth peak) in the infrared region of the emission spectrum of a light-emitting device that emits infrared light The wavelength (also referred to as the fourth peak wavelength) can be longer than the second peak wavelength. The peak wavelength can be 750 nm or more and 1300 nm or less.

[0074] [Pixels] 2A to 2E show examples of pixel configurations.

[0075] A light-emitting device according to one embodiment of the present invention has a plurality of pixels arranged in a matrix. A pixel has one or more sub-pixels. One sub-pixel has one light-emitting device. For example, For example, a pixel may have three sub-pixels (three colors of R, G, and B, or yellow (Y), cyan (C), and magenta (M), or a structure with four sub-pixels (R, G, , B, and white (W), or four colors (R, G, B, Y, etc.) can be applied.

[0076] In the light-emitting device according to one aspect of the present invention, at least one of the sub-pixels constituting a pixel is irradiated with visible light. Additionally, it is configured to emit infrared light.

[0077] The pixels shown in FIGS. 2A to 2C are each composed of three colors: red (R), green (G), and blue (B). The red (R) subpixel emits infrared light (IR). 2B is a configuration in which the green (G) subpixel emits infrared light (IR). FIG. 2C shows a configuration in which the blue (B) subpixel emits infrared light (IR).

[0078] The pixels shown in FIGS. 2D and 2E are red (R), green (G), blue (B), and white (W). 2D and 2E show four subpixels (four light-emitting devices) for red (R ) emits infrared light (IR), but is not limited to this and may be used for sub-pixels of other colors. FIG. 2D shows a configuration in which four sub-pixels are arranged in a horizontal row. Figure 2E shows an example in which four sub-pixels are arranged in a 2x2 matrix. be.

[0079] [Light-emitting device configuration] The configuration of a light-emitting device included in a light-emitting device according to one embodiment of the present invention will be described below with reference to FIGS. This article explains:

[0080] In this specification and the like, unless otherwise specified, elements (light-emitting devices, light-emitting layers, etc.) Even when explaining a configuration that has multiple elements, when explaining matters common to each element For example, the light-emitting layer 193R and the light-emitting layer 193G, etc. When describing matters common to the above, the layer may be referred to as the light-emitting layer 193.

[0081] The light emitting devices shown in FIGS. 3A to 3D and 4A to 4D each include a transistor on a substrate 151. A light emitting device 47R emitting red (R) light and a light emitting device 47R emitting green ( a light-emitting device 47G that emits light of color G, and a light-emitting device 47B that emits light of color B. At least one of the three light-emitting devices has the function of emitting infrared light. 3A to 3D and 4A to 4D, the light emitting devices that emit infrared light are indicated by the symbols Add (IR) to.

[0082] Each color light emitting device includes a pixel electrode 191, a common electrode 115, and at least one light emitting element. The pixel electrode 191 is provided for each light-emitting device. The common electrode 115 The pixel electrode 191 and the common electrode 115 are used in common for a plurality of light-emitting devices. Each of the light-emitting units may have a single layer structure or a laminated structure. It also has one light-emitting layer 193 .

[0083] 3A-3D and 4A-4D, the light emitting device is formed on a substrate 151, The light emitting device is a top-emission type light emitting device that emits light toward the common electrode 115. The common electrode 115 is an electrode that is transparent to visible light and infrared light (also called a transparent electrode). , or an electrode that is transparent and reflective to visible light and infrared light (semi-transparent and semi-reflective electrode) The pixel electrode 191 is an electrode ( It is preferable that the electrode is a reflecting electrode.

[0084] The light-emitting device has one light-emitting unit between the pixel electrode 191 and the common electrode 115. It may have a single structure or a tandem structure having a plurality of light-emitting units. .

[0085] Light-emitting devices that emit visible light but not infrared light have a single structure, which makes them easy to manufacture. A light-emitting device that emits both visible light and infrared light is also a single structure. In addition, a light-emitting device that emits both visible light and infrared light can be The tandem structure has the advantages of making it easier to optimize the optical path and increasing the emission intensity. Yes, and preferable.

[0086] 3A to 3D show examples in which the light-emitting device for each color has a single structure.

[0087] 3A and 3B show a configuration in which the light-emitting device 47B (IR) emits blue light and infrared light. do.

[0088] The light-emitting device 47R shown in FIG. 3A has a buffer between the pixel electrode 191 and the common electrode 115. The light-emitting layer 192R, the light-emitting layer 193R, and the buffer layer 194R are arranged in this order. 3R has a luminescent material that emits red light.

[0089] The light-emitting device 47G shown in FIG. 3A has a buffer between the pixel electrode 191 and the common electrode 115. The light-emitting layer 192G, the light-emitting layer 193G, and the buffer layer 194G are arranged in this order. The 3G has a luminescent material that emits green light.

[0090] The light-emitting device 47B (IR) shown in FIG. 3A has a pixel electrode 191 and a common electrode 115. , the buffer layer 192B, the light-emitting layer 193N, the light-emitting layer 193B, and the buffer layer 194B. The light-emitting layer 193N has a light-emitting material that emits infrared light. The light-emitting layer 193B has , which has a light-emitting material that emits blue light.

[0091] As will be described in detail later, in the light-emitting device 47B(IR), the light-emitting layer 193N is larger than the light-emitting layer 19 It is preferable that the pixel electrode 191 is located closer to the reflective electrode (pixel electrode 191 in FIG. 3A) than to the pixel electrode 191 in FIG. 3B. A light-emitting layer 193N is provided between the reflective electrode and the light-emitting layer 193B. By separating them, the efficiency of extracting blue light can be increased.

[0092] The light-emitting unit includes a layer other than the light-emitting layer 193, which is made of a material having a high hole injection property, a material having a high hole transport property, and a materials with low electron transportability, hole blocking materials, materials with high electron injection properties, or It further has a layer containing a polar substance (a substance with high electron transport property and hole transport property) or the like. These layers may be configured differently for each color light-emitting device.

[0093] For example, in the light-emitting device of each color, a The buffer layer 192 may have one or both of a hole injection layer and a hole transport layer. In addition, for example, in the light emitting device of each color, the light emitting layer 193 and the common electrode 1 The buffer layer 194 provided between the first and second electrodes 15 and 19 is an electron transport layer and an electron injection layer. It is preferable to have one or both of the buffer layers 192R, 192G, 192B, and 19 Each of 4R, 194G, and 194B may have a single layer structure or a laminated structure. stomach.

[0094] The light emitting device shown in FIG. 3B does not have the buffer layers 192R, 192G, and 192B, but has a common layer 1 12, and does not have the buffer layers 194R, 194G, and 194B, but has a common layer 11 3A in that it has a light emitting device 4.

[0095] The common layer 112 preferably includes one or both of a hole injection layer and a hole transport layer. The common layer 114 preferably includes one or both of an electron transport layer and an electron injection layer. Each of the common layers 112 and 114 may have a single layer structure or a laminated structure.

[0096] At least some of the layers other than the light-emitting layer 193 are configured in common to the light-emitting devices of each color. This is preferable because it reduces the manufacturing process of the light emitting device.

[0097] 3C and 3D show a configuration in which the light-emitting device 47R(IR) emits red light and infrared light. do.

[0098] The light-emitting device 47R(IR) shown in FIGS. 3C and 3D has a pixel electrode 191 and a common electrode 115. Between them, a common layer 112, a buffer layer 192R, a light-emitting layer 193R, a light-emitting layer 193N, a buffer layer 192R, a buffer layer 192 ... The light-emitting layer 193R has a red light-emitting layer 193R and a common layer 114. The light-emitting layer 193N includes a light-emitting material that emits infrared light.

[0099] The light-emitting device 47R(IR) shown in FIG. 3C has a pixel electrode 191 and a light-emitting layer 193N. On the other hand, the light-emitting device 47R(IR) shown in FIG. The light-emitting layer 193N is disposed between the light-emitting layer 191 and the light-emitting layer 193R. There is no particular limitation on the stacking order of 3N.

[0100] The light-emitting device 47G shown in FIGS. 3C and 3D has a pixel electrode 191 and a common electrode 115. , the common layer 112, the buffer layer 192G, the light-emitting layer 193G, the buffer layer 194G, and the common The light-emitting layer 193G includes, in order, a layer 114. The light-emitting layer 193G includes a light-emitting material that emits green light.

[0101] The light-emitting device 47B shown in FIGS. 3C and 3D has a pixel electrode 191 and a common electrode 115. , the common layer 112, the buffer layer 192B, the light-emitting layer 193B, the buffer layer 194B, and the common The light-emitting layer 193B includes, in order, a light-emitting material that emits blue light.

[0102] As shown in FIGS. 3C and 3D, the light-emitting devices for each color are formed by a part of the layers other than the light-emitting layer 193 (i.e., The buffer layer is made for each color, and the other part (common layer) is used in common. As described above, by making some of the layers other than the light-emitting layer 193 a common configuration for the light-emitting devices of each color, This is preferable because it can reduce the manufacturing process of the light-emitting device. layers 192R, 192G, 192B, 194R, 194G, 194B and common layer 112, Some of the layers 114 may not be present.

[0103] For example, in FIGS. 3C and 3D, the common layer 112 includes a hole injection layer and the buffer layer 192 R, 192G, and 192B have hole transport layers, and buffer layers 194R, 194G, and 194B Preferably, the common layer 114 has an electron transport layer and the common layer 115 has an electron injection layer.

[0104] 4A to 4C show a light-emitting device that emits infrared light and has a tandem structure. This is an example of a single structure.

[0105] FIG. 4A shows a structure similar to that of FIG. 3A in that it has an intermediate layer 198 between light-emitting layer 193N and light-emitting layer 193B. Similarly, FIG. 4B shows a structure in which an intermediate layer 198 is provided between light-emitting layer 193N and light-emitting layer 193B. 3B in that it has a layer between the light-emitting layer 193N and the light-emitting layer 193R. 3C in that it has an intermediate layer 198 therein.

[0106] The intermediate layer 198 has at least a charge generating layer. The charge generating layer is disposed between the two light emitting units. When a voltage is applied between a pair of electrodes, the charge generating layer generates a light emitting layer. It has the function of injecting electrons into one light-emitting unit and holes into the other light-emitting unit. The intermediate layer 198 is made of a material having a high hole injection property, a material having a high hole transport property, a hole blocking material, A layer containing a substance having a high electron transporting property, a substance having a high electron injecting property, or a bipolar substance It may further have:

[0107] A light-emitting layer that emits infrared light (light-emitting layer 193N) and a light-emitting layer that emits visible light (light-emitting layer 193B, A single structure having a light-emitting layer 193G or a light-emitting layer 193R in one light-emitting unit. In this structure, the excitons are shared between the two light-emitting layers, resulting in lower emission intensities of visible and infrared light. As shown in FIGS. 4A to 4C, a light-emitting unit having a light-emitting layer 193N and a light-emitting unit having a light-emitting layer 19 The light-emitting device has a tandem structure in which the light-emitting unit having the light-emitting layer 3B or the light-emitting layer 193R is separated. By applying this to a semiconductor laser, the emission intensity of visible light and infrared light can be increased.

[0108] Even when a tandem structure is applied to a light-emitting device that emits both visible light and infrared light, the light emission Some of the layers other than the layer may have a common structure with other light-emitting devices.

[0109] For example, the light-emitting device 47B(IR) shown in FIG. 4B has a pixel electrode 191 and a lower light-emitting layer 1 93N, and a common layer 112 is provided between the common electrode 115 and the upper light-emitting layer 193B. The common layer 112 and the common layer 114 are common to other light-emitting devices. is.

[0110] 4C, the light-emitting device 47R(IR) has a pixel electrode 191 and a lower light-emitting layer 19 3N, a common layer 112 and a buffer layer 192R are provided between the common electrode 115 and the upper light-emitting The common layer 112 and the buffer layer 194R are disposed between the common layer 112 and the layer 193B. The through layer 114 has a structure common to other light-emitting devices, and includes a buffer layer 192R and a buffer Layer 194R is configured to be separate from other light-emitting devices.

[0111] 4D has a buffer layer 116 on the common electrode 115. The buffer layer 116 is made of an organic film, a semiconductor film, an inorganic insulating film, or the like. The light emitting device shown in FIG. 4D is configured such that light emitted from the light emitting device is guided to the buffer layer 116 side. Since the buffer layer 116 is configured to transmit visible light and infrared light, This is preferable because it suppresses light absorption by the buffer layer 116 and As an organic film, it can be used in light-emitting devices. materials with high hole injection properties, materials with high hole transport properties, hole blocking materials, electron transport materials Examples of such a layer include a layer containing a material with high conductivity, a material with high electron injection properties, or a bipolar material. The semiconductor film may be a semiconductor film that transmits visible light and infrared light. The buffer layer 116 is a passivation layer. This prevents impurities such as moisture from entering the light-emitting device. Furthermore, when the common electrode 115 has a function of reflecting visible light and infrared light, By providing the buffer layer 116, the light energy generated by the surface plasmon in the common electrode 115 is This can reduce energy loss.

[0112] A light-emitting device preferably has a micro-optical resonator (microcavity) structure. Therefore, one of the pair of electrodes of the light-emitting device is preferably resistant to visible light and infrared light. It is preferable to have an electrode having transmissive and reflective properties (semi-transmissive and semi-reflective electrode). It is preferable that the light emitting device has an electrode (reflective electrode) that is reflective to visible light and infrared light. stomach.

[0113] The light transmittance of the transparent electrode is 40% or more. Visible light (light with wavelengths of 400 nm or more and less than 750 nm) and near-infrared light (light with wavelengths of 750 nm or more and less than 13 It is preferable to use an electrode having a transmittance of 40% or more for each of the wavelengths (light of 100 nm or less). The reflectance of the semi-transmissive and semi-reflective electrodes for visible light and near-infrared light is 10% or more and 95% or less. % or less, preferably 30% to 80%. The ratio is 40% or more and 100% or less, preferably 70% or more and 100% or less. The resistivity of these electrodes is 1×10 -2 Ωcm or less is preferable.

[0114] In the following, a reflective electrode is used for the pixel electrode 191, and a semi-transmissive / semi-reflective electrode is used for the common electrode 115. This section explains the case of a top-emission light-emitting device, which is a light-emitting device with a By having a closed cavity structure, light emitted from the light-emitting layer 193 is resonated between both electrodes. This allows the light transmitted through the common electrode 115 to be intensified.

[0115] The light-emitting device is configured to emit light toward the pixel electrode 191 (bottom emission type). Specifically, a reflective electrode is used for the common electrode 115, and the pixel electrode 19 1 is provided with an electrode that transmits visible light and infrared light (also called a transparent electrode) or a semi-transparent / semi-reflective electrode. By using this, light can be emitted to the pixel electrode 191 side.

[0116] The material and film thickness of the pair of electrodes of the light-emitting devices of each color can be the same. This makes it possible to reduce the manufacturing cost of the light emitting device and simplify the manufacturing process.

[0117] The light-emitting devices are formed with different configurations for each color. A light-emitting device 47 emitting red light R, the light emitting unit is set so that the optical distance between the pair of electrodes is an optical distance that intensifies red light emission. It is preferable to adjust the film thickness of the knit. Similarly, a light-emitting device 47G that emits green light In this case, the light emitting unit is arranged so that the optical distance between the pair of electrodes is an optical distance that enhances green light emission. It is preferable to adjust the thickness of the blue light emitting device 47B. In this case, the light emitting unit is arranged so that the optical distance between the pair of electrodes is an optical distance that intensifies blue light emission. Furthermore, in a light-emitting device that emits infrared light, it is preferable to adjust the film thickness of the It is preferable that the optical distance between the pair of electrodes is an optical distance that also enhances infrared light emission. In a light-emitting device that emits both visible and infrared light, the visible light (red, green, or blue) and the red It is preferable to adjust the film thickness of the light emitting unit so that the optical distance is such that both the external light and the external light are intensified. In addition, when the semi-transmissive / semi-reflective electrode has a laminated structure of a reflective electrode and a transparent electrode, The optical distance between the electrodes refers to the optical distance between a pair of reflecting electrodes.

[0118] Specifically, for the wavelength λ of light obtained from the light emitting layer 193, the pixel electrode 191 and the common electrode Adjust the optical distance from 115 to nλ / 2 (n is a natural number) or close to it. is preferred.

[0119] In this specification, the wavelength λ of the light obtained from the light emitting layer 193 is determined by the peak of the light emitting layer 193. In this specification and the like, the wavelength may be a peak wavelength (particularly, a maximum peak wavelength). The vicinity of the length X means a range within ±20 nm of X, preferably within ±10 nm of X.

[0120] In a microcavity structure, the optical distance between a pair of electrodes (including the phase shift due to reflection) For example, the optical distance can be increased by dividing a multiple of the wavelength by an integer. If the distance is 500 nm, (500 × 2 / 1 =) 1000 nm, (500 × 2 / 2 =) 50 0nm, (500×2 / 3=) 333nm, (500×2 / 4=) 250nm, etc. Alternatively, if the optical path length is 500 nm, (500× 3 / 1=)1500nm, (500×3 / 2=)750nm, (500×3 / 3=)50 It is also possible to extract intensified light of wavelengths such as 0nm, (500×3 / 4=) 375nm, etc.

[0121] Therefore, by adopting an optical distance that is a common multiple of visible light and infrared light, Both external and internal light can be extracted efficiently.

[0122] Here, several standard values have been established as indicators of quality in full-color display. For example, in devices such as displays, printers, digital cameras, and scanners, An international standard color space established by the IEC (International Electrotechnical Commission) to unify the differences in color reproduction between The sRGB standard is widely established as the standard for color space. National Television System Committee of the Republic of The NTSC standard is a color gamut standard for analog television created by the NTSC (National Television Standards Committee) DCI-P3 (Digital Cinema Interchange Standard), the international standard for distributing digital movies (cinema), Ital Cinema Initiatives) standard, high-definition UH defined by NHK DTV (Ultra High Definition Television, Super Recommendation ITU-R BT.2020 (hereinafter referred to as BT.2020) and other standards. Since the wavelengths of R, G, and B are fixed, infrared light can be extracted along with visible light. The wavelength of the light is limited.

[0123] For example, the wavelengths of light corresponding to R, G, and B specified in BT.2020 and their nth order light ( (n is a natural number) are shown in Table 1.

[0124] [Table 1]

[0125] As can be seen from Table 1, the microcavity structure allows for R, G, and B values as specified in BT.2020. It is possible to estimate the wavelength of infrared light that can be extracted by strengthening it with either of the If n is too large, the light extraction efficiency decreases, so n is preferably 1 or more and 3 or less. It is particularly preferable that n is 1 or 2. Therefore, for R, G, and B, n=2, The corresponding wavelengths are 934nm, 1064nm, 1260nm, and R, G n = 3 in 2. The wavelengths of 798nm, 945nm, etc. are intensely mixed with either R, G, or B light. It can be seen that the infrared light can be extracted quickly.

[0126] Based on the above, it is necessary to decide which color of nth order light to apply depending on the wavelength of the infrared light you want to extract. It is preferable to appropriately determine the value.

[0127] In addition, in order to increase the light extraction efficiency of a light-emitting device, it is necessary to consider not only the optical distance between a pair of electrodes but also the between the region of the light-emitting layer 193 where desired light is obtained (light-emitting region) and the electrode where reflection occurs. The optical distance between the pixel electrode 191 and the light-emitting area is also important. 2m'+1)λ / 4 or its vicinity, and the optical distance between the common electrode 115 and the light-emitting region is (2M+1)λ / 4 or its vicinity (m' and M are 0 or (n=m'+M+1), light can be extracted efficiently. The light-emitting region refers to a region where holes and electrons recombine in the light-emitting layer.

[0128] Figures 5A and 5B show an example of applying the secondary light (n=2) of visible light. In other words, the infrared light wave The length λi is twice the wavelength λv of visible light. The optical distance between a pair of electrodes is λi / 2 As shown in Figures 5A and 5B, when applying the secondary light of visible light, There are two preferable combinations of the positions of the light emitting region and the infrared light emitting region.

[0129] In FIG. 5A, the optical distance between the pixel electrode 191 and the visible light emitting region EM(V) is λv / 4, and the optical distance between the common electrode 115 and the visible light emitting region EM(V) is 3λv / 4, and the optical distance between the pixel electrode 191 and the infrared light emitting region EM(IR) is λi / 4, and the optical distance between the common electrode 115 and the infrared light emitting region EM(IR) is λi / Here is an example where the value is 4.

[0130] In FIG. 5B, the optical distance between the pixel electrode 191 and the visible light emitting region EM(V) is 3λv / 4, and the optical distance between the common electrode 115 and the visible light emitting region EM(V) is λv / 4, and the optical distance between the pixel electrode 191 and the infrared light emitting region EM(IR) is λi / 4, and the optical distance between the common electrode 115 and the infrared light emitting region EM(IR) is λi / Here is an example where the value is 4.

[0131] Here, a specific metal film (for example, a metal film containing a noble metal such as silver) is used as the reflective electrode. When used, surface plasmon resonance (SPR) This can cause a decrease in light extraction efficiency due to the influence of the surface of the metal film. At or near the plasmon resonance point, light resonates with the plasmon vibration inherent to the metal, and the wavelength corresponding to this vibration is generated. This is because the optical distance between the reflective electrode and the light-emitting region of the light-emitting layer is This phenomenon is more likely to occur when the wavelengths are closer to each other. It is also more likely to occur in light-emitting devices that emit blue light.

[0132] Therefore, in the top-emission type blue light-emitting device 47B, the pixel The optical distance from the electrode 191 to the light-emitting region of the light-emitting layer 193B is (2m'+1)λ / 4(m' is a natural number) or its vicinity.

[0133] That is, a top-emitting light-emitting device 47B (I) that emits blue light and infrared light In the case of R), it is preferable to apply the configuration shown in FIG. 5B. The configuration of FIG. 5B is the same as the configuration of FIG. 5A. Compared with the structure, the light from the pixel electrode 191 (reflective electrode) to the light-emitting region of the blue light-emitting layer 193B Since the optical distance can be increased, the effect of surface plasmon resonance can be suppressed, and light extraction can be improved. This can increase efficiency.

[0134] In the light-emitting device 47B(IR) shown in FIGS. 3A, 3B, 4A, and 4B, the pixel electrode 19 The light emitting layer 193B is provided on the light emitting layer 193N. The light emitting layer 193N emits blue light having a wavelength shorter than that of infrared light. By separating B from the pixel electrode 191 (reflective electrode), the blue light extraction efficiency can be increased. This can be done.

[0135] On the other hand, in the case of a bottom emission type light emitting device, a reflective electrode is used as the common electrode 115. Therefore, in a bottom-emission blue light-emitting device, the common electrode The optical distance from 115 to the light-emitting region of the light-emitting layer 193B is (2M+1)λ / 4 (M is a natural number). ) or its vicinity.

[0136] That is, in the case of a bottom-emitting light-emitting device that emits blue light and infrared light, It is preferable to apply the configuration shown in FIG. 5A. The configuration in FIG. 5A has a common feature compared to the configuration in FIG. 5B. The optical distance from the conductive electrode 115 (reflective electrode) to the light-emitting region of the blue light-emitting layer 193B is increased. This suppresses the effect of surface plasmon resonance and increases light extraction efficiency. It is possible.

[0137] In the case of a bottom-emitting light-emitting device that emits blue light and infrared light, for example, The light emitting layer 193N is located closer to the reflective electrode (common electrode 115) than the light emitting layer 193B. It is preferable to provide a light-emitting layer 193N between the reflective electrode and the light-emitting layer 193B. By separating the light emitting layer 193B from the blue light, the extraction efficiency of the blue light can be increased.

[0138] In addition, light-emitting devices 47R (IR) that emit red light and infrared light or green light and infrared light In the case of the light-emitting device 47G(IR) that emits light, either the configuration of FIG. 5A or FIG. 5B can be applied. Depending on the wavelength, for the reasons described above, it may be preferable to change the direction of light extraction. The configuration may vary.

[0139] By performing such optical adjustment, the spectrum of a specific monochromatic light obtained from the light-emitting layer 193 can be adjusted. This narrows the line width of the light emitting device, allowing for light emission with good color purity. This can suppress a decrease in light emission efficiency and reduce the power consumption of the light emitting device.

[0140] Strictly speaking, the optical distance between the pixel electrode 191 and the common electrode 115 is The reflection coefficient is the product of the distance from the reflecting surface at the common electrode 115 to the reflecting surface at the common electrode 115 and the refractive index. However, the pixel electrode 191 and the common electrode 115 It is difficult to precisely determine the reflective surface and phase shift in the pixel electrode. 191 and the common electrode 115 are assumed to be reflection surfaces, and an arbitrary phase shift is assumed. This is sufficient to obtain the above-mentioned effects.

[0141] Similarly, strictly speaking, the optical distance between the pixel electrode 191 and the light-emitting region is The phase shift caused by reflection is the product of the refractive index and the distance from the reflecting surface to the light-emitting region in the light-emitting layer. However, the reflecting surface and the phase shifter in the pixel electrode 191 It is difficult to precisely determine the size of the light-emitting region in the light-emitting layer. Assuming that an arbitrary position of the element electrode 191 is a reflective surface and an arbitrary phase shift is assumed, an arbitrary position of the light-emitting layer is It is assumed that the above-mentioned effect can be sufficiently obtained by assuming that the position is a light emitting region.

[0142] For example, the light-emitting region of the light-emitting layer 193 is formed on the surface on the pixel electrode 191 side and the surface on the common electrode 115 side. It can be assumed to be a surface, or the center of the light-emitting layer 193, or the like.

[0143] In addition, the light-emitting device 47B (IR) has an optical distance between a pair of electrodes that is equal to the blue light of the light-emitting layer 193B. The wavelength is adjusted to be half the wavelength of the infrared light emitted from the light-emitting layer 193N. In the light-emitting device 47R, it is preferable that the optical distance between the pair of electrodes is It is preferable to adjust the wavelength of the light emitted from the light source 47G to half that of the red light. The optical distance between the pair of electrodes is adjusted to be half the wavelength of the green light emitted from the light-emitting layer 193G. With such a configuration, it is possible to increase the light extraction efficiency of each color. can.

[0144] In a light-emitting device having three light-emitting devices of R, G, and B, the light between a pair of R and G electrodes The optical distance between the pair of electrodes in B is half the wavelength of each color, and the optical distance between the pair of electrodes in B is the wavelength of blue. To manufacture such a device, it is necessary to create layers other than the light-emitting layer for R, G, and B, which reduces productivity. In addition, when layers other than the light-emitting layer are used in common for R, G, and B, the efficiency of blue light emission is improved. From the above viewpoint, the layer provided in common to the three colors is thick, and the optical distance between each pair of electrodes for each of the three colors is It becomes the wavelength of the color.

[0145] On the other hand, in one embodiment of the present invention, a light emitting device that emits blue light is configured to emit infrared light. In order to adjust the optical distance between the pair of electrodes to the wavelength of blue light, Therefore, the thickness of the light-emitting unit can be adjusted. There is no need to thicken layers that are also used with optical devices. This allows for high productivity and The optical distance between the pair of electrodes is half the wavelength of each color, and the optical distance between the pair of electrodes of B is blue. They can be made to be any wavelength of color.

[0146] Figures 5C and 5D show an example of applying the third order light (n=3) of visible light. The wavelength λi of infrared light is The optical distance between a pair of electrodes is λi = 3λv / 2. As shown in Figures 5C and 5D, when applying the third-order light of visible light, There are six preferable combinations of positions of the light emitting region and the infrared light emitting region.

[0147] In FIG. 5C, the optical distance between the pixel electrode 191 and the infrared light emitting region EM(IR) is λi / 4, and the optical distance between the common electrode 115 and the infrared light emitting region EM(IR) is 3λ Here is an example where it is i / 4:

[0148] In FIG. 5D, the optical distance between the pixel electrode 191 and the infrared light emitting region EM(IR) is 3λ i / 4, and the optical distance between the common electrode 115 and the infrared light emitting region EM(IR) is λ Here is an example where it is i / 4:

[0149] The position (a) of the visible light emitting region shown in FIGS. 5C and 5D is the pixel electrode 191 and the visible light emitting region. The optical distance between the common electrode 115 and the visible light emitting region EM(V) is λv / 4. The optical distance between the laser beam and the laser beam EM(V) is 5λv / 4.

[0150] The position (b) of the visible light emitting region shown in FIGS. 5C and 5D is the pixel electrode 191 and the visible light emitting region. The optical distance between the common electrode 115 and the region EM(V) is 3λv / 4. The optical distance between the region EM(V) is 3λv / 4.

[0151] The position (c) of the visible light emitting region shown in FIGS. 5C and 5D is the pixel electrode 191 and the visible light emitting region. The optical distance between the common electrode 115 and the region EM(V) is 5λv / 4. The optical distance between the region EM(V) is λv / 4.

[0152] In the case of a tandem structure, the light-emitting layer that emits visible light and the light-emitting layer that emits infrared light are spaced apart. Therefore, in FIG. 5C, the positions (b) and (c) of the visible light emitting region are preferred. In FIG. 5D, the positions (a) and (b) of the visible light emitting region are preferable.

[0153] In the case of a single structure, the light-emitting layer that emits visible light and the light-emitting layer that emits infrared light must be close to each other. Therefore, in FIG. 5C, the position (a) of the visible light emitting region is preferable, and in FIG. 5D, Position (c) of the visible light emitting region is preferred.

[0154] In addition, the refractive index of the organic film that constitutes the light-emitting device is wavelength-dependent. By utilizing this property, infrared light of a desired wavelength can be extracted.

[0155] In the wavelength range from visible light to infrared light, the refractive index of organic films tends to be low. As the refractive index decreases, the optical path length changes depending on the color even with the same film thickness, and the longer the wavelength of light, the longer the optical path length. The distance becomes shorter. In particular, there is a large difference in refractive index between the wavelengths of blue light and infrared light. For example, when applying the secondary light of blue light, the wavelength of the infrared light that can be extracted is The wavelength dependence of the refractive index of the organic film can be used to extract the light. The wavelength of infrared light can be controlled. If the film has anisotropy of the refractive index, It is preferable to control the wavelength of the extracted infrared light by utilizing the refractive index value.

[0156] For example, the hole transport layer of the light emitting device has an ordinary refractive index of λv for visible light. is preferably greater than the ordinary refractive index for light of infrared wavelength λi by 0.1 or more, It is more preferable that the electron transport layer of the light emitting device is larger than 0.2. The ordinary refractive index for light with a wavelength λv is higher than the ordinary refractive index for infrared light with a wavelength λi. It is preferable that the ratio is 0.1 or more, and more preferably 0.2 or more. Therefore, the peak wavelength of the extracted infrared light can be shifted to the shorter wavelength side.

[0157] [Variations] 6A and 6B are cross-sectional views of a light-emitting device according to one embodiment of the present invention.

[0158] The light emitting devices 40G and 40H shown in FIGS. 6A and 6B respectively emit red (R) light. , green (G) light, blue (B) light, and infrared (IR) light are emitted.

[0159] The light emitting device 40G and the light emitting device 40H are light emitting devices that extract red light, green light, and blue light. In addition to the optical device, a light emitting device for extracting infrared light is also provided.

[0160] The light emitting device 40G shown in FIG. 6A includes a light emitting device 47R between a substrate 151 and a substrate 152. , light emitting device 47G, light emitting device 47B, and light emitting device 47N.

[0161] Light emitting device 40H shown in FIG. 6B has the same configuration as light emitting device 40G, but also has a substrate 151 and a substrate 15 Between them is a layer 45 which contains a transistor.

[0162] In the light emitting devices 40G and 40H, the light emitting device 47R emits red (R) light. The light-emitting device 47G can emit green (G) light. The light emitting device 47B can emit blue (B) light, and the light emitting device 47N can emit infrared light ( It can emit IR.

[0163] 6C and 6D show examples of pixel configurations. The pixels shown in FIGS. 6C and 6D are red, It has four sub-pixels (four light-emitting devices) for red (R), green (G), blue (B), and infrared light. FIG. 6C shows an example in which four sub-pixels are arranged in a horizontal row, and FIG. 6D shows an example in which four sub-pixels are arranged in a horizontal row. This is an example in which four sub-pixels are arranged in a trix shape.

[0164] FIG. 6E illustrates a structural example of a light-emitting device included in a light-emitting device of one embodiment of the present invention.

[0165] The light emitting device shown in FIG. 6E is a light emitting device in which a red light emitting element is formed on a substrate 151 via a layer 45 having a transistor. a light-emitting device 47R that emits red (R) light, a light-emitting device 47G that emits green (G) light, A light emitting device 47B that emits blue (B) light, a light emitting device 47 that emits infrared (IR) light Has N.

[0166] A light-emitting device 47R that emits red light and a light-emitting device 47N that emits infrared light, as shown in FIG. 6E. In this case, the light-emitting device 47R and the light-emitting device 47B can have the same structure between the pair of electrodes. The optical device 47N is configured to emit both red light and infrared light. In the case of the device 47N, the red light is blocked by the filter 141a provided on the common electrode 115. In the light-emitting device 47R, the common electrode 11 The filter 141b provided on the lens 5 blocks infrared light, and only red light is taken out. It is served.

[0167] In addition, both the light-emitting device 47R and the light-emitting device 47N have the light-emitting layer 193R and the light-emitting layer 193R. 93N, and the light emitting unit is provided so that only red or infrared light is extracted. The film thickness may be adjusted.

[0168] As described above, the structure common to light-emitting devices that emit visible light and light-emitting devices that emit infrared light is By applying this composition, it is possible to fabricate a sub-pixel that emits infrared light without significantly increasing the manufacturing process of the light-emitting device. A material can be provided.

[0169] The structure of a light-emitting device according to one embodiment of the present invention will be described below with reference to FIGS. In the following, we will focus on the light-emitting devices that emit G and B light among the three light-emitting devices for R, G, and B. The structure of the light emitting device that emits R light is the same as that of the light emitting device that emits G light. It can be the same as the

[0170] [Light-emitting device 30A] FIG. 7A shows a cross-sectional view of light emitting device 30A.

[0171] The light emitting apparatus 30A includes a light emitting device 190B and a light emitting device 190G. The light emitting device 190B has a function of emitting blue light 21B and infrared light 21N. 90G has the function of emitting green light 21G.

[0172] The light-emitting device 190B includes a pixel electrode 191, a buffer layer 192B, a light-emitting layer 193B, and a light-emitting The layer 193N, the buffer layer 194B, and the common electrode 115 are included. Although the light-emitting layer 193B and the light-emitting layer 193N are described as one layer, the light-emitting layer 193B and the light-emitting layer 193N are preferably separate layers. Light-emitting device 190B is a top-emitting type. Therefore, as described above, the light-emitting layer 193N is provided between the pixel electrode 191 and the light-emitting layer 193B. It is preferable that:

[0173] The light-emitting device 190G includes a pixel electrode 191, a buffer layer 192G, a light-emitting layer 193G, a buffer layer 194G, a buffer layer 195G, a buffer layer 196G, a buffer layer 197G, a buffer layer 198G, a buffer layer 199G, a buffer layer 191G, a buffer layer 192G, a buffer layer 193G, a buffer layer 194 The layer 194G includes a common electrode 115.

[0174] Pixel electrode 191, buffer layer 192B, buffer layer 192G, light-emitting layer 193B, light-emitting layer 1 93N, a light-emitting layer 193G, a buffer layer 194B, a buffer layer 194G, and a common electrode 11 5 may each have a single layer structure or a laminated structure.

[0175] The pixel electrode 191 is located on the insulating layer 214. can be formed using the same material and the same process.

[0176] The light emitting device 30A has a configuration in which layers other than the light emitting layer of the light emitting device are also made separately for each color. Specifically, the light emitting device 190B and the light emitting device 190G have a pair of electrodes ( An example in which there is no common layer between the pixel electrode 191 and the common electrode 115 is shown.

[0177] The light-emitting device 190B and the light-emitting device 190G have two pixel electrodes 19 on an insulating layer 214. 1 is formed using the same material and the same process, and a buffer layer 192B is formed on one pixel electrode 191. , the light-emitting layer 193N, the light-emitting layer 193B, and the buffer layer 194B are formed, and the other pixel electrode After forming a buffer layer 192G, a light-emitting layer 193G, and a buffer layer 194G on the substrate 191, , two pixel electrodes 191, a buffer layer 192B, a light-emitting layer 193N, a light-emitting layer 193B, a buffer layer The light-emitting layer 194B, the buffer layer 192G, the light-emitting layer 193G, and the buffer layer 194G are covered with the The common electrode 115 can be formed as shown in FIG. 193N, a stacked structure of a light-emitting layer 193B, and a buffer layer 194B, and a buffer layer 192G The order in which the stacked structure of the light-emitting layer 193G and the buffer layer 194G is formed is not particularly limited. For example, buffer layer 192B, light-emitting layer 193N, light-emitting layer 193B, and buffer layer 194B After forming the above, a buffer layer 192G, a light-emitting layer 193G, and a buffer layer 194G are fabricated. Conversely, the buffer layer 192B, the light-emitting layer 193N, the light-emitting layer 193B, and the buffer Before forming the light emitting layer 194B, the buffer layer 192G, the light emitting layer 193G, and the buffer layer 194B are formed. In addition, the buffer layer 192B, the buffer layer 192G, the light-emitting layer 19 The films may be formed alternately in the order of 3N, etc.

[0178] The buffer layer 192B and the buffer layer 192G may be, for example, a hole injection layer and a hole transport layer. One or both of the layers can be formed.

[0179] The light-emitting layer 193B and the light-emitting layer 193N are connected to the pixel electrode 191 via the buffer layer 192B. The light-emitting layer 193B and the light-emitting layer 193N are connected to a common electrode via a buffer layer 194B. The light-emitting layer 193B includes a light-emitting material that emits blue light. N has a luminescent material that emits infrared light.

[0180] The light-emitting layer 193G overlaps with the pixel electrode 191 via the buffer layer 192G. The light-emitting layer 193G overlaps the common electrode 115 via a buffer layer 194G. It has a luminescent material that emits colored light.

[0181] The buffer layer 194B and the buffer layer 194G may be, for example, an electron injection layer and an electron transport layer. One or both of the layers can be formed.

[0182] The common electrode 115 is formed by the buffer layer 192B, the light-emitting layer 193B, the light-emitting layer 193N, and the buffer layer 192C. The common electrode 115 has a portion overlapping with the pixel electrode 191 via the layer 194B. , the pixel electrode 1 through the buffer layer 192G, the light-emitting layer 193G, and the buffer layer 194G. 91. The common electrode 115 is connected to the light-emitting device 190B and the light-emitting device 190C. This is a layer commonly used in 90G.

[0183] The light emitting device 30A includes a light emitting device 190 between a pair of substrates (substrate 151 and substrate 152). B, light-emitting device 190G, transistor 42, etc.

[0184] It is preferable that a light-shielding layer BM is provided on the surface of the substrate 152 facing the substrate 151. The light-shielding layer BM is , and has openings at positions overlapping with the light-emitting devices.

[0185] As shown in FIG. 7B, the light-shielding layer BM may not be provided.

[0186] The light-shielding layer BM may be made of a material that blocks light emitted from the light-emitting device 190. The light-shielding layer BM preferably absorbs visible light. For example, the light-shielding layer BM may be made of a metal material. Or, black using a resin material containing a pigment (carbon black, etc.) or a dye. The light-shielding layer BM can be formed with a red color filter, a green color filter, and a The transparent electrode may have a laminated structure of a black filter and a blue color filter.

[0187] In the light-emitting device 190 of each color, a line is formed between the pixel electrode 191 and the common electrode 115. The buffer layer 192, the light-emitting layer 193, and the buffer layer 194 located therebetween may also be called an EL layer. Cut.

[0188] The pixel electrode 191 preferably has a function of reflecting visible light and infrared light. The end of the common electrode 91 is covered by a partition wall 216. The common electrode 115 is transparent to visible light and infrared light. The light-emitting device 190 has a function of transmitting light between the pixel electrode 191 and the common electrode 115. It is an electroluminescent device that emits light toward the substrate 152 side by applying a voltage (light 21B , light 21G, infrared light 21N).

[0189] The pixel electrode 191 is connected to the transistor 42 through an opening provided in the insulating layer 214. The edge of the pixel electrode 191 is electrically connected to the source or drain. The transistor 42 has a function of controlling the driving of the light emitting device 190. do.

[0190] The light emitting device 190 is preferably covered by a protective layer 195. In FIG. The protective layer 195 is provided on the common electrode 115 in contact therewith. The light emitting device 190 is prevented from being contaminated by impurities such as water, and the light emitting device 190 is illuminated with a high-quality light. In addition, the adhesive layer 142 can improve the reliability of the protective layer 195 and the substrate 152. The protective layer 195 has a buffer layer 116 or is a buffer layer. Alternatively, the protective layer 195 may have the function of the common electrode 115. The buffer layer 116 may be provided therebetween.

[0191] As shown in FIG. 7B, the light-emitting device 190 does not necessarily have to have a protective layer. In 7B, the common electrode 115 and the substrate 152 are bonded together by the adhesive layer 142. .

[0192] [Light-emitting device 30B] FIG. 7B shows a cross-sectional view of light emitting device 30B. Description of the same configuration as that of the light emitting device described above may be omitted.

[0193] The light emitting device 30B does not have the buffer layer 192B and the buffer layer 192G, and has the common layer 112 The light emitting device 30A differs from the light emitting device 30A in that it has the following.

[0194] The common layer 112 is located on the pixel electrode 191. The common layer 112 is located on the light-emitting device 190B. and light-emitting device 190G.

[0195] The common layer 112 may be, for example, a hole injection layer or a hole transport layer. The common layer 112 may have a single layer structure or a laminated structure.

[0196] At least a part of the layers other than the light-emitting layer has a common configuration regardless of the color of the light-emitting device. This is preferable because it can reduce the number of steps for manufacturing the light emitting device.

[0197] [Light-emitting device 30C] FIG. 7C shows a cross-sectional view of light emitting device 30C.

[0198] The light emitting device 30C does not have the buffer layer 194B and the buffer layer 194G, and has the common layer 114 The light emitting device 30A differs from the light emitting device 30A in that it has the following.

[0199] The common layer 114 is formed on the partition wall 216, the light-emitting layer 193B, the light-emitting layer 193N, and the light-emitting layer 19 Common layer 114 is located on light-emitting device 190B and light-emitting device 190G. This is a commonly used layer.

[0200] The common layer 114 may be, for example, an electron injection layer or an electron transport layer. The common layer 114 may have a single layer structure or a laminated structure.

[0201] At least a part of the layers other than the light-emitting layer has a common configuration regardless of the color of the light-emitting device. This is preferable because it can reduce the number of steps for manufacturing the light emitting device.

[0202] [Light-emitting device 30D] FIG. 8A shows a cross-sectional view of light emitting device 30D.

[0203] The light emitting device 30D includes a buffer layer 192B, a buffer layer 192G, a buffer layer 194B, and The light-emitting device does not have the buffer layer 194G, but has the common layer 112 and the common layer 114. Different from 30A.

[0204] All layers other than the light-emitting layer have a common configuration regardless of the color of the light-emitting device. This is preferable because it can further reduce the manufacturing steps.

[0205] [Light-emitting device 30E] FIG. 8B shows a cross-sectional view of light emitting device 30E.

[0206] Light-emitting device 30E has intermediate layer 198 between light-emitting layer 193N and light-emitting layer 193B. That is, the light emitting device 190B of the light emitting device 30D is a single The light-emitting device 190B of the light-emitting device 30E has a tandem structure. In addition, the light-emitting device 190G that does not emit infrared light preferably has a single structure. .

[0207] If the light emitting device that emits visible light and infrared light has a single structure, the productivity of the light emitting device will be improved. Furthermore, when the light-emitting device that emits visible light and infrared light has a tandem structure, This is preferable because it has advantages such as making it easier to optimize the optical path and increasing the emission intensity.

[0208] [Light Emitting Device 30F] FIG. 8C shows a cross-sectional view of light emitting device 30F.

[0209] The light emitting device 30F shown in FIG. 8C does not have the substrate 151 and the substrate 152, but has the substrate 153 and the substrate The light emitting device 30 differs from the light emitting device 30A in that it has a layer 154, an adhesive layer 155, and an insulating layer 212.

[0210] The substrate 153 and the insulating layer 212 are bonded together by an adhesive layer 155. The protective layer 195 is bonded to the substrate 190 by an adhesive layer 142 .

[0211] The light emitting device 30F includes an insulating layer 212, a transistor 42, and a light emitting device 44 formed on a fabrication substrate. The structure is fabricated by transposing the vise 190 and the like onto the substrate 153. The light emitting device 30 and the substrate 154 are preferably flexible. For example, the substrate 153 and the substrate 154 each have: It is preferable to use a resin.

[0212] The substrates 153 and 154 are made of polyethylene terephthalate (PET). Polyester resins such as polyethylene naphthalate (PEN), polyacrylonitrile resins Oil, acrylic resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resin (nylon, ara) amide, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamide Imide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, poly Propylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, cellulose Nanofibers or the like can be used. Alternatively, glass having a thickness sufficient to provide flexibility may be used.

[0213] A film with high optical isotropy may be used for the substrate of the light-emitting device of this embodiment mode. Triacetyl cellulose (TAC, cellulose triacetate) is an example of a film with high optical isotropy. acetate film, cycloolefin polymer (COP) film, cyclo Examples include olefin copolymer (COC) films and acrylic films.

[0214] The following describes in more detail the configuration of a light-emitting device according to one embodiment of the present invention with reference to FIGS. 9 to 11. I will explain.

[0215] [Light-emitting device 200A] FIG. 9 shows a perspective view of the light emitting device 200A, and FIG. 10A shows a cross-sectional view of the light emitting device 200A. vinegar.

[0216] The light emitting device 200A has a structure in which a substrate 152 and a substrate 151 are bonded together. 1 shows the substrate 152 clearly in dashed lines.

[0217] The light emitting device 200A includes a light emitting portion 163, a circuit 164, wiring 165, etc. 1 shows an example in which an IC (integrated circuit) 173 and an FPC 172 are mounted on the device 200A. Therefore, the configuration shown in FIG. 9 is a light emitting module having a light emitting device 200A, an IC, and an FPC. It can also be called a joule.

[0218] The circuit 164 can be, for example, a scanning line driver circuit.

[0219] The wiring 165 has a function of supplying signals and power to the light-emitting portion 163 and the circuit 164. The signals and power are transmitted from the outside via the FPC 172 or from the IC 173 to the wiring 165. is entered.

[0220] In Figure 9, the COG (Chip On Glass) method or COF (Chip on This shows an example in which an IC 173 is mounted on a substrate 151 using a film method or the like. 3 can be an IC having a scanning line driver circuit or a signal line driver circuit, for example. The light emitting device 200A and the light emitting module may be configured without an IC. C may be mounted on the FPC using the COF method or the like.

[0221] FIG. 10A shows a part of the area including the FPC 172, the circuit 1, and the light emitting device 200A shown in FIG. 64, a part of the area including the light emitting portion 163, and a part of the area including the end portion. An example of a cross section of each cut is shown.

[0222] The light emitting device 200A shown in FIG. 10A includes a transistor 20 between a substrate 151 and a substrate 152. 1, transistor 206, transistor 207, light-emitting device 190B, light-emitting device 1 90G, a protective layer 195, etc.

[0223] The substrate 151 and the substrate 152 are bonded together via an adhesive layer 142. Light-emitting device 190B A solid sealing structure or a hollow sealing structure can be applied to seal the light emitting device 190G. In FIG. 10A, a substrate 151, an adhesive layer 142, and a space 143 surrounded by the substrate 152 are , filled with inert gas (nitrogen, argon, etc.), and a hollow sealed structure is applied. The adhesive layer 142 may be provided over the light-emitting device 190. 1. A space 143 surrounded by the adhesive layer 142 and the substrate 152 is filled with a resin different from the adhesive layer 142. May be filled with fat.

[0224] The light-emitting device 190B is made up of, from the insulating layer 214 side, a pixel electrode 191B, a common layer 112, and a light-emitting layer 193N, a light-emitting layer 193B, a common layer 114, and a common electrode 115 are laminated in this order. The pixel electrode 191B is connected to the transistor through an opening provided in the insulating layer 214. The transistor 206 is connected to the conductive layer 222b of the light-emitting device. It has the function of controlling the drive of the sensor 190B.

[0225] The light-emitting device 190G is made up of, from the insulating layer 214 side, a pixel electrode 191G, a common layer 112, and a light-emitting layer 193G, the common layer 114, and the common electrode 115 are stacked in this order. The electrode 191G is connected to the gate electrode 191G of the transistor 207 through an opening provided in the insulating layer 214. The transistor 207 is connected to the conductive layer 222b. It has the function of controlling the above.

[0226] The end of the pixel electrode 191B and the end of the pixel electrode 191G are covered with a partition wall 216. The pixel electrode 191B and the pixel electrode 191G contain a material that reflects visible light and infrared light. The common electrode 115 includes a material that is transparent to visible and infrared light.

[0227] The light emitted by the light emitting device 190 is emitted toward the substrate 152. It is preferable to use a material that is highly transparent to infrared light.

[0228] The pixel electrode 191B and the pixel electrode 191G can be manufactured using the same material and in the same process. The common layer 112, the common layer 114, and the common electrode 115 are connected to the light-emitting device 190B. The light emitting device 190B and the light emitting device 190G are both used. G can have at least a part of the configuration other than the light-emitting layer in common. This allows the light emitting device 200A to be endowed with the ability to emit infrared light without significantly increasing the number of manufacturing steps. It is possible.

[0229] The light emitting device 190 is covered by a protective layer 195. The protective layer 195 prevents light from emitting. The intrusion of impurities such as water into the device 190 is suppressed, and the reliability of the light-emitting device 190 is improved. can be increased.

[0230] In a region 228 near the end of the light emitting device 200A, an insulating layer 214 is formed through an opening in the insulating layer 214. It is preferable that the insulating layer 215 and the protective layer 195 contact each other. It is preferable that the inorganic insulating film and the inorganic insulating film of the protective layer 195 are in contact with each other. This prevents impurities from entering the light-emitting section 163 from the outside through the organic insulating film. Therefore, the reliability of the light emitting device 200A can be improved.

[0231] 10B shows an example in which the protective layer 195 has a three-layer structure. The inorganic insulating layer 195a on the common electrode 115 and the organic insulating layer 19 on the inorganic insulating layer 195a are 5b and an inorganic insulating layer 195c on the organic insulating layer 195b.

[0232] The end of the inorganic insulating layer 195a and the end of the inorganic insulating layer 195c are closer to each other than the end of the organic insulating layer 195b. The inorganic insulating layer 195a extends outward and contacts the insulating layer 214( The insulating layer 215 (inorganic insulating layer) is in contact with the insulating layer 215 through the opening in the insulating layer 215. Layer 215 and protective layer 195 can surround light emitting device 190, thereby preventing light emitting device This can improve the reliability of the 190.

[0233] In this way, the protective layer 195 may have a laminated structure of an organic insulating film and an inorganic insulating film. In this case, it is preferable that the end of the inorganic insulating film extends further outward than the end of the organic insulating film.

[0234] A light-shielding layer BM is provided on the surface of the substrate 152 facing the substrate 151. It has an opening at a position overlapping with the device 190 .

[0235] The transistor 201, the transistor 206, and the transistor 207 are all connected to the substrate 1. These transistors are fabricated using the same materials and processes. It can be manufactured.

[0236] On the substrate 151, an insulating layer 211, an insulating layer 213, an insulating layer 215, and an insulating layer 214 are formed. The insulating layer 211 has a portion serving as a gate insulating layer for each transistor. A part of the insulating layer 213 functions as a gate insulating layer for each transistor. An insulating layer 215 is provided over the transistor. An insulating layer 214 is provided over the transistor. The number of gate insulating layers and the number of transistors are determined by the number of gate insulating layers. The number of insulating layers covering the star is not limited, and each may be a single layer or two or more layers.

[0237] At least one insulating layer covering the transistor is made of a material that is resistant to the diffusion of impurities such as water and hydrogen. It is preferable to use a material such that the insulating layer can function as a barrier layer. This structure effectively prevents impurities from diffusing into the transistor from the outside. This can effectively suppress the occurrence of light, thereby improving the reliability of the light emitting device.

[0238] The insulating layers 211, 213, and 215 are each made of an inorganic insulating film. As the inorganic insulating film, for example, a silicon nitride film or a silicon oxynitride film is preferable. , silicon oxide film, silicon nitride oxide film, aluminum oxide film, aluminum nitride film, etc. Inorganic insulating films such as hafnium oxide film, yttrium oxide film, and oxide film can be used. Zirconium oxide film, gallium oxide film, tantalum oxide film, magnesium oxide film, lanthanum oxide film Alternatively, a silicon oxide film, a cerium oxide film, a neodymium oxide film, or the like may be used. The above layers may be used in a laminated state.

[0239] Here, organic insulating films often have lower barrier properties than inorganic insulating films. The insulating film preferably has an opening near the end of the light emitting device 200A. It is possible to prevent impurities from entering from the end of the optical device 200A through the organic insulating film. Alternatively, the organic insulating film may be arranged so that the edge of the organic insulating film is located inside the edge of the light emitting device 200A. An insulating film may be formed so that the organic insulating film is not exposed at the end of the light emitting device 200A.

[0240] An organic insulating film is suitable for the insulating layer 214 that functions as a planarizing layer. Materials that can be used include acrylic resin, polyimide resin, epoxy resin, polyamide resin, resin, polyimide amide resin, siloxane resin, benzocyclobutene resin, phenol resins, and precursors of these resins.

[0241] In the region 228 shown in FIG. 10A, an opening is formed in the insulating layer 214. Even when an organic insulating film is used for the insulating layer 214, the light emitting portion can be exposed from the outside through the insulating layer 214. Therefore, the reliability of the light emitting device 200A can be improved. It can be increased.

[0242] The transistor 201, the transistor 206, and the transistor 207 function as gates. a conductive layer 221 serving as a gate insulating layer; an insulating layer 211 serving as a source and drain insulating layer; the conductive layer 222a and the conductive layer 222b, the semiconductor layer 231, and the gate insulating layer The insulating layer 213 functions as a gate, and the conductive layer 223 functions as a gate. The same hatching pattern is applied to multiple layers obtained by processing the same conductive film. The insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231. The insulating layer 213 is located between the conductive layer 221 and the semiconductor layer 231. It is located between the conductive layer 223 and the semiconductor layer 231 .

[0243] The structure of the transistor included in the light-emitting device of this embodiment is not particularly limited. Uses a staggered transistor, a staggered transistor, an inverted staggered transistor, etc. In addition, either a top-gate type or a bottom-gate type transistor structure can be used. Alternatively, gates may be provided above and below the semiconductor layer where the channel is formed. Good too.

[0244] The transistor 201, the transistor 206, and the transistor 207 have channels. The structure in which the semiconductor layer formed by the gate is sandwiched between two gates is applied. Alternatively, the transistors may be driven by supplying the same signal to these. One of the two gates is given a potential to control the threshold voltage, and the other is given a potential to drive the The threshold voltage of the transistor may be controlled by applying a potential.

[0245] The crystallinity of the semiconductor material used in the transistor is not particularly limited. A semiconductor with crystallinity (microcrystalline semiconductor, polycrystalline semiconductor, single crystal semiconductor, or semiconductor with a partially crystalline region) If a semiconductor having crystallinity is used, This is preferable because it can suppress deterioration of the resistor characteristics.

[0246] The semiconductor layer of the transistor preferably contains a metal oxide (also called an oxide semiconductor). Alternatively, the semiconductor layer of the transistor may contain silicon. are amorphous silicon, crystalline silicon (low-temperature polysilicon, single-crystal silicon, etc.) ) etc.

[0247] The semiconductor layer may be made of, for example, indium and M (M is gallium, aluminum, silicon, fluorine, etc.). Uron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, gel Al, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, one or more selected from the group consisting of tantalum, tungsten, and magnesium), zinc, In particular, M is aluminum, gallium, yttrium, and sulphur. It is preferable that the organic solvent is one or more selected from the group consisting of:

[0248] In particular, the semiconductor layer contains indium (In), gallium (Ga), and zinc (Zn). It is preferable to use IGZO (Indium Zirconate Oxide).

[0249] When the semiconductor layer is an In-M-Zn oxide, a film of the In-M-Zn oxide is formed. In the sputtering target, the atomic ratio of In is preferably equal to or greater than the atomic ratio of M. The atomic ratio of the metal elements in such a sputtering target is In:M:Zn= 1:1:1, In:M:Zn=1:1:1.2, In:M:Zn=2:1:3, In:M :Zn=3:1:2, In:M:Zn=4:2:3, In:M:Zn=4:2:4.1, In:M:Zn=5:1:6, In:M:Zn=5:1:7, In:M:Zn=5:1: 8, In:M:Zn=6:1:6, In:M:Zn=5:2:5, etc.

[0250] When a target containing polycrystalline oxide is used as a sputtering target, the crystal This is preferable because it is easy to form a semiconductor layer having a high atomic property. The atomic ratio is the sum of the atomic ratio of the metal elements contained in the sputtering target. For example, if the composition of the sputtering target used for the semiconductor layer is I When the atomic ratio is n:Ga:Zn=4:2:4.1, the composition of the semiconductor layer is I The atomic ratio may be close to n:Ga:Zn=4:2:3.

[0251] When the atomic ratio is described as In:Ga:Zn=4:2:3 or in the vicinity, the ratio of In When the atomic ratio is 4, the atomic ratio of Ga is 1 or more and 3 or less, and the atomic ratio of Zn is 2 or more. Also, the atomic ratio of In:Ga:Zn=5:1:6 or When describing it as being close to the atomic ratio of Ga, when the atomic ratio of In is 5, the atomic ratio of Ga is 0.1. The atomic ratio of Zn is greater than or equal to 5 and less than or equal to 7. When describing that the numerical ratio is In:Ga:Zn=1:1:1 or close to it, When the atomic ratio is 1, the atomic ratio of Ga is greater than 0.1 and less than 2, and the atomic ratio of Zn is This includes cases where the ratio is greater than 0.1 and less than or equal to 2.

[0252] The transistors in the circuit 164 and the transistors in the light-emitting section 163 have the same structure. The circuit 164 may have a plurality of transistors, or may have a different structure. The structures may all be the same, or there may be two or more types. The structures of the plurality of transistors may all be the same, or there may be two or more types.

[0253] A connection portion 204 is provided in the area of the substrate 151 where the substrate 152 does not overlap. In the portion 204, the wiring 165 is electrically connected to the FPC 172 via the conductive layer 166 and the connection layer 242. The upper surface of the connection portion 204 is electrically connected to the pixel electrode 191B and the pixel electrode 191G. The conductive layer 166 obtained by processing the same conductive film is exposed. 4 and the FPC 172 can be electrically connected via a connection layer 242.

[0254] Various optical members can be arranged on the outside of the substrate 152. Examples of optical members include a polarizing plate. Examples of the optical film include a retardation plate, a light diffusion layer (such as a diffusion film), an anti-reflection layer, and a light collecting film. The outside of the substrate 152 is coated with an anti-static film to prevent dust from adhering, It is equipped with a water-repellent film that protects the surface, a hard coating that prevents scratches from occurring during use, and an impact absorbing layer. It may be placed.

[0255] The substrates 151 and 152 are made of glass, quartz, ceramic, sapphire, resin, etc. The substrate 151 and the substrate 152 may be made of a flexible material. This can increase the flexibility of the light emitting device.

[0256] The adhesive layer may be a photo-curable adhesive such as an ultraviolet curable adhesive, a reaction-curable adhesive, or a heat-curable adhesive. Various curing adhesives such as elastomeric adhesives and anaerobic adhesives can be used. epoxy resin, acrylic resin, silicone resin, phenolic resin, polyimide resin, imide Resin, PVC (Polyvinyl Chloride) Resin, PVB (Polyvinyl Butyral) Resin, EV A (ethylene vinyl acetate) resins, etc. In particular, epoxy resins, etc., which have high moisture permeability, A material with low viscosity is preferable. Two-component resin may also be used. An adhesive sheet or the like may also be used. It's fine.

[0257] The connection layer 242 is made of an anisotropic conductive film (ACF). Conductive Film), Anisotropic Conductive Paste (ACP) Conductive Paste) can be used.

[0258] The light emitting device 190 may be a top-emitting type, a bottom-emitting type, a dual-emitting type, or a The electrode on the light extraction side is made of a conductive film that transmits visible light and infrared light. In addition, a conductive film that reflects visible light and infrared light is used for the electrode on the side where light is not extracted. It is preferable that

[0259] Light-emitting device 190B emits infrared (IR) and blue (B) light. Light-emitting device 190B has at least light-emitting layer 193B and light-emitting layer 193N. The light-emitting device 190G has at least a light-emitting layer 193G. The light-emitting device 190 includes layers other than the light-emitting layer 193, such as a material with high hole injection properties, a material with high transport properties, a hole blocking material, a material with high electron transport properties, a material with high electron injection properties, Alternatively, the common layer 112 may further include a layer containing a bipolar material. It is preferable that the layer has one or both of a hole injection layer and a hole transport layer. For example, The layer 114 preferably has one or both of an electron transport layer and an electron injection layer.

[0260] The common layer 112, the light-emitting layer 193, and the common layer 114 contain low-molecular-weight compounds and high-molecular-weight compounds. The common layer 112 and the light-emitting layer 1 may contain an inorganic compound. The layers constituting the common layer 114 and the layer 93 are formed by deposition (including vacuum deposition), transfer, respectively. The film can be formed by a method such as a printing method, an ink jet method, or a coating method.

[0261] The light-emitting layer 193 may contain an inorganic compound such as quantum dots as a light-emitting material.

[0262] In addition to the gate, source, and drain of the transistor, various wiring and electrical wiring that make up the light-emitting device are also Materials that can be used for the conductive layers such as electrodes include aluminum, titanium, chromium, and nickel. Nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten These materials include metals such as tungsten, as well as alloys that contain these metals as their main components. The film containing the compound can be used as a single layer or as a laminate structure.

[0263] Examples of the light-transmitting conductive material include indium oxide, indium tin oxide, and indium tin oxide. Conductive oxides such as gallium zinc oxide, zinc oxide, zinc oxide containing gallium, or graphite Alternatively, gold, silver, platinum, magnesium, nickel, tungsten, Metallic materials such as nickel, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium Alternatively, an alloy material containing the metal material can be used. Alternatively, a nitride of the metal material (e.g., For example, titanium nitride) may be used. When using a material, it is preferable to make it thin enough to have light-transmitting properties. For example, a laminated film of an alloy of silver and magnesium and an indium alloy can be used as the conductive layer. It is preferable to use a laminated film of tungsten oxide or the like, since this can increase the conductivity. These include conductive layers such as various wirings and electrodes that constitute the light-emitting device, and conductive layers that the light-emitting device has. The conductive layer can also be used as a pixel electrode or a common electrode.

[0264] Examples of insulating materials that can be used for each insulating layer include acrylic resin and epoxy resin. Resins such as silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, oxide Examples of the insulating material include inorganic insulating materials such as aluminum.

[0265] [Light-emitting device 200B] FIG. 11A shows a cross-sectional view of light emitting device 200B.

[0266] The light emitting device 200B differs from the light emitting device 200A in the structure of the transistors.

[0267] The light emitting device 200B includes a transistor 202, a transistor 208, and a transistor 21. 0.

[0268] Transistor 202, transistor 208, and transistor 210 function as gates. a conductive layer 221 serving as a gate insulating layer, an insulating layer 211 serving as a gate insulating layer, and a channel forming region 23 a semiconductor layer having a pair of low resistance regions 231n, one of the pair of low resistance regions 231n; a conductive layer 222a connected to the other of the pair of low resistance regions 231n; , an insulating layer 225 functioning as a gate insulating layer, a conductive layer 223 functioning as a gate, and The insulating layer 211 covers the conductive layer 223. The insulating layer 211 is connected to the conductive layer 221 and the channel. The insulating layer 225 is located between the conductive layer 223 and the channel forming region 231i. It is located between area 231i.

[0269] The conductive layer 222a and the conductive layer 222b are provided on the insulating layer 225 and the insulating layer 215, respectively. The conductive layer 222a and the conductive layer 222b are connected to the low resistance region 231n through the opening. One of the b functions as a source and the other functions as a drain.

[0270] The pixel electrode 191B of the light-emitting device 190B is connected to the transistor 21 through the conductive layer 222b. 0 is electrically connected to one of the pair of low resistance regions 231n.

[0271] The pixel electrode 191G of the light-emitting device 190G is connected to the transistor 20 via the conductive layer 222b. 8 is electrically connected to one of the pair of low resistance regions 231n.

[0272] 11A shows an example in which the insulating layer 225 covers the top and side surfaces of the semiconductor layer. In this case, the insulating layer 225 overlaps with the channel forming region 231i of the semiconductor layer 231, forming a low resistance region. For example, the insulating layer 225 may be processed using the conductive layer 223 as a mask. 11B, the insulating layer 225 and the conductive layer 223 are formed. An insulating layer 215 is provided to cover the conductive layer 222a and the conductive layer 222b. The conductive layer 222b is connected to the low resistance region 231n. An overlying insulating layer 218 may be provided.

[0273] Furthermore, the light emitting device 200B does not have the substrate 151 and the substrate 152, but has the substrate 153 and the substrate 155. 4, the light emitting device 200 differs from the light emitting device 200A in that it has an adhesive layer 155 and an insulating layer 212.

[0274] The substrate 153 and the insulating layer 212 are bonded together by an adhesive layer 155. The protective layer 195 is bonded to the substrate 190 by an adhesive layer 142 .

[0275] The light emitting device 200B includes an insulating layer 212, a transistor 202, and a transistor 204 formed on a fabrication substrate. The transistor 208, the transistor 210, and the light emitting device 190 are printed on the substrate 153. The substrate 153 and the substrate 154 are each flexible. This can improve the flexibility of the light emitting device 200B.

[0276] The insulating layer 212 can be used for the insulating layer 211, the insulating layer 213, and the insulating layer 215. An inorganic insulating film such as

[0277] In the light emitting device 200B, the protective layer 195 and the substrate 154 are bonded together by the adhesive layer 142. The adhesive layer 142 is provided overlying the light emitting device 190, as shown in FIG. In A, a solid sealing structure is applied to the light emitting device.

[0278] [Metal oxides] Metal oxides applicable to the semiconductor layer will be described below.

[0279] In this specification and the like, metal oxides containing nitrogen are also referred to as metal oxides. Nitrogen-containing metal oxides are also called metal oxynitrides (met). For example, zinc oxynitride (ZnON) Any nitrogen-containing metal oxide may be used for the semiconductor layer.

[0280] In this specification and the like, CAAC (c-axis aligned crystal ), and CAC (Cloud-Aligned Composite) CAAC represents an example of a crystal structure, and CAC represents an example of a function or material configuration.

[0281] For example, the semiconductor layer is made of CAC (Cloud-Aligned Composite)-O S (Oxide Semiconductor) can be used.

[0282] CAC-OS or CAC-metal oxide is a material that has the function of conductivity in some parts. The material has an insulating function in part and a semiconductor function in the whole. Note that CAC-OS or CAC-metal oxide is used as a semiconductor for transistors. When used in a layer, the conductive function is to allow electrons (or holes) to flow as carriers. The insulating function is to prevent the flow of electrons, which act as carriers. By making the functions of the two complementary to each other, the switching function (On / Off) is realized. CAC-OS or CAC-metal oxide is given the function of In CAC-OS or CAC-metal oxide, By separating the functions, the functionality of both can be maximized.

[0283] In addition, CAC-OS or CAC-metal oxide has a conductive region and an insulating region. The conductive region has the above-mentioned conductive function, and the insulating region has the above-mentioned insulating function. In addition, the conductive region and the insulating region are formed at the nanoparticle level in the material. The conductive and insulating regions may be separated by a thin film. In addition, the conductive area may be observed as a cloud-like connected area with a blurred periphery. This may be the case.

[0284] In addition, in CAC-OS or CAC-metal oxide, the conductive region and the insulating region are The peripheral region is 0.5 nm to 10 nm, preferably 0.5 nm to 3 nm. The following sizes may be dispersed in the material:

[0285] In addition, CAC-OS or CAC-metal oxide has different band gaps. For example, CAC-OS or CAC-metal oxidized de is a component with a wide gap due to the insulating region and a component with a narrow gap due to the conductive region. In this configuration, when carriers flow, In the narrow gap component, carriers mainly flow. The component having a wide gap acts complementary to the component having a narrow gap. Carriers also flow into the wide-gap component in conjunction with the component with a wide gap. AC-OS or CAC-metal oxide is placed in the channel formation region of the transistor. When used, the transistor has a high current driving force in the on state, i.e., a large on-current. Furthermore, high field-effect mobility can be obtained.

[0286] That is, CAC-OS or CAC-metal oxide is a matrix composite material. (matrix composite), or metal matrix composite It can also be called a matrix composite.

[0287] Oxide semiconductors (metal oxides) are divided into single-crystal oxide semiconductors and other non-single-crystal oxide semiconductors. As a non-single-crystal oxide semiconductor, for example, CAAC-OS (ca xis aligned crystalline oxide semiconductor tor), polycrystalline oxide semiconductor, nc-OS (nanocrystalline oxide de semiconductor), pseudo-amorphous oxide semiconductor (a-like OS: amorphous-like oxide semiconductor), and amorphous and oxide semiconductors.

[0288] CAAC-OS has a c-axis orientation and multiple nanocrystals are connected in the ab-plane direction. The crystal structure has distortion. The distortion is the area where multiple nanocrystals are connected. In the region, the lattice arrangement is changed between a region with a uniform lattice arrangement and another region with a uniform lattice arrangement. Indicates the point where the direction is changing.

[0289] Nanocrystals are basically hexagonal, but they are not limited to regular hexagonal shapes and may be non-regular hexagonal. In addition, the distortion may have a lattice arrangement such as a pentagon or a heptagon. In CAAC-OS, clear grain boundaries are observed even near the strain. It is difficult to confirm the grain boundary due to the distortion of the lattice arrangement. This is because the CAAC-OS has a high SiO2 content in the ab-plane direction. The oxygen atoms are not densely packed, and the bond distance between atoms changes due to the substitution of metal elements. This is because distortion can be tolerated by, for example, adjusting the distortion.

[0290] The CAAC-OS also includes a layer containing indium and oxygen (hereinafter referred to as an In layer) and an element M , zinc, and oxygen layers (hereinafter referred to as (M, Zn) layers) are stacked. It is also called a layered structure. Indium and element M are mutually substitutable. When the element M in the (M,Zn) layer is replaced with indium, the (In,M,Zn) layer and Also, when indium in the In layer is replaced with element M, the (In,M) layer It can also be expressed as:

[0291] CAAC-OS is a metal oxide with high crystallinity. Since it is difficult to identify grain boundaries, the decrease in electron mobility caused by grain boundaries is unlikely to occur. In addition, the crystallinity of metal oxides can be reduced by the incorporation of impurities or the generation of defects. Therefore, CAAC-OS has impurities and defects (oxygen vacancies (V O :oxygen va It can also be said to be a metal oxide with low levels of cations such as cations. Metal oxides with OS have stable physical properties. Metal oxides are heat resistant and highly reliable.

[0292] nc-OS is a material that can be used in microscopic areas (e.g., areas between 1 nm and 10 nm, especially areas between 1 nm and 3 nm). The nc-OS has periodic atomic arrangement in the nanometer range (nm or less). There is no regularity in the crystal orientation between the crystals. Therefore, no orientation is observed throughout the film. Therefore, depending on the analysis method, nc-OS may be distinguished from a-like OS or amorphous oxide semiconductor. It may be difficult to distinguish between the two.

[0293] Indium gallium oxide, a type of metal oxide containing indium, gallium, and zinc, is In the case of IGZO, the nanocrystals mentioned above provide a stable structure. In particular, IGZO tends to have difficulty growing crystals in the atmosphere. Small crystals (e.g., crystals of a few mm or a few cm) are more likely to be formed than large crystals (here, crystals of a few mm or a few cm). , the nanocrystals mentioned above) may be structurally more stable.

[0294] The a-like OS is a metal oxide semiconductor with a structure between the nc-OS and amorphous oxide semiconductor. A-like OS has voids or low density areas. The e-OS has lower crystallinity than the nc-OS and CAAC-OS.

[0295] Oxide semiconductors (metal oxides) have a variety of structures, each with different properties. The oxide semiconductor of one embodiment of the present invention is an amorphous oxide semiconductor, a polycrystalline oxide semiconductor, an a-lik The crystalline structure may have two or more of e-OS, nc-OS, and CAAC-OS.

[0296] The metal oxide film functioning as a semiconductor layer is heated by either an inert gas or an oxygen gas. The metal oxide film can be formed by using both of the oxygen flow rate ratio and the oxygen flow rate ratio. However, in order to obtain a transistor with high field effect mobility, In this case, the oxygen flow rate ratio (oxygen partial pressure) during the deposition of the metal oxide film is 0% or more and 3% or less. 0% or less is preferable, 5% or more and 30% or less is more preferable, and 7% or more and 15% or less is even more preferable. preferable.

[0297] The metal oxide preferably has an energy gap of 2 eV or more, and more preferably 2.5 eV or more. It is more preferable that the energy is 3 eV or more, and even more preferable that the energy is 3 eV or more. By using metal oxides with a wide energy gap, the off-state current of transistors can be reduced. This can be done.

[0298] The substrate temperature during the deposition of the metal oxide film is preferably 350°C or less, and is preferably between room temperature and 200°C. The substrate temperature during the formation of the metal oxide film is more preferably from room temperature to 130° C. If the temperature is room temperature, productivity can be increased, which is preferable.

[0299] The metal oxide film can be formed by sputtering. The D method, PECVD method, thermal CVD method, ALD method, vacuum deposition method, etc. may also be used.

[0300] As described above, the light emitting device of the present embodiment includes a light emitting device that emits visible light and infrared light, The light emitting device of the present embodiment emits visible light and infrared light. Since it can emit both visible light and infrared light, it can be used for sensors that use visible light as a light source and infrared light as a light source. The sensor uses both visible light and infrared light as a light source. It can be used in any situation and is highly convenient.

[0301] In the light emitting device of this embodiment, one sub-pixel emits both visible light and infrared light. Therefore, it is possible to increase the number of sub-pixels in one pixel without increasing the number of sub-pixels. The optical device may be configured to emit both visible light and infrared light. The light-emitting device that emits infrared light and the light-emitting device that emits visible light have layers with a common configuration. Therefore, it is possible to significantly change the pixel layout of the light-emitting device and to change the manufacturing process. The light-emitting device can be equipped with the function of emitting infrared light without a significant increase in cost. .

[0302] This embodiment mode can be combined with other embodiment modes as appropriate. In the case where multiple configuration examples are shown in one embodiment, the configuration examples may be combined as appropriate. It is possible to do this.

[0303] (Embodiment 2) In this embodiment, a display device according to one embodiment of the present invention will be described with reference to FIGS. 12 to 19. .

[0304] A display device according to one embodiment of the present invention includes a light-emitting device that emits visible light and infrared light, and a display device that emits a light-emitting device that emits visible light and infrared light. A light-emitting device that emits visible light and a light-receiving device that detects at least some of the visible light and infrared light. Visible light includes light with a wavelength of 400 nm or more and less than 750 nm. Examples of infrared light include red, green, and blue light. Examples of infrared light include near-infrared light. Specifically, light having a wavelength of 750 nm or more and 1300 nm or less is included.

[0305] A display device according to one embodiment of the present invention includes a first light-emitting device, a second light-emitting device, and a The first light-emitting device has a function of emitting both visible light and infrared light. The second light-emitting device has a function of emitting visible light. The light-receiving device has a function of emitting visible light. The first light-emitting device has a function of absorbing at least a part of the light and the infrared light. The pixel electrode includes a first light-emitting layer, a second light-emitting layer, and a common electrode. The second light-emitting layers are respectively located between the first pixel electrodes and the common electrode. The device has a second pixel electrode, a third light-emitting layer, and a common electrode. The light-receiving device is located between the second pixel electrode and the common electrode. The light-receiving device includes a third pixel electrode, an active layer, and a common electrode. The active layer is located between the third pixel electrode and the common electrode. The light-emitting layer includes a light-emitting material that emits infrared light. The second light-emitting layer and the third light-emitting layer each include The active layer includes light-emitting materials that emit visible light of different wavelengths. The active layer includes an organic compound.

[0306] A display device according to one embodiment of the present invention displays an image using visible light emitted from a light-emitting device. Specifically, light-emitting devices are arranged in a matrix on the display unit. An image can be displayed on the display unit.

[0307] Furthermore, in the display device according to one embodiment of the present invention, the light-emitting device may be a sensor (e.g., an image sensor). The present invention can be used as a light source for a variety of devices, including a touch sensor and an optical touch sensor. The device can emit both visible and infrared light, so it is suitable for sensors that use visible light as a light source. It can be combined with either a sensor that uses infrared light as a light source or a sensor that uses infrared light as a light source, making it highly convenient. It can also be used as a light source for sensors that use both visible light and infrared light as light sources. The functionality of the sensor can be improved.

[0308] In addition, in the display device according to one embodiment of the present invention, one sub-pixel emits both visible light and infrared light. For example, three LEDs each emitting red, green, or blue light can be used. Any of the sub-pixels may be configured to emit infrared light. By also serving as a sub-pixel that emits infrared light, there is no need to provide a separate sub-pixel that emits infrared light. Therefore, the display device can receive visible light and infrared light without increasing the number of sub-pixels that one pixel has. This can prevent a decrease in the aperture ratio of the pixel, and the display device The light extraction efficiency can be improved.

[0309] In addition, the display unit has light receiving devices arranged in a matrix. The light receiving device detects either or both of visible light and infrared light. The light receiving section can be used as an image sensor or a touch sensor. By detecting light with the light receiving section, it is possible to capture an image or to detect the proximity of an object (such as a finger or pen). It is possible to detect contact or touch.

[0310] The display device according to one embodiment of the present invention includes a light receiving device and a light emitting device. Therefore, it is possible to provide a light receiving section and a display device separately. This eliminates the need for a light source and reduces the number of components in the electronic device.

[0311] In the display device of one embodiment of the present invention, light emitted from a light-emitting device included in a display portion is reflected by an object. When the light is reflected, the light-receiving device can detect the reflected light, allowing for imaging, touch (and more) even in dark places. is capable of proximity detection.

[0312] Furthermore, the display device of one embodiment of the present invention includes a light-emitting device that emits visible light and infrared light, a light-emitting device that emits visible light, and a light-emitting device that emits infrared light. The three devices, the light-emitting device that emits light, and the light-receiving device, have layers with a common configuration. Therefore, it is possible to provide a display device that emits infrared light without significantly increasing the number of manufacturing steps. It is possible to add functions and incorporate a light-receiving device. For example, a hole injection layer, a positive electrode, At least one of the hole transport layer, electron transport layer, and electron injection layer was the same in the three devices. It is possible to make it into a single configuration.

[0313] The layers that are common to the light-receiving device and the light-emitting device have different functions depending on whether they are light-emitting devices or receiving devices. In this specification, the function of the light emitting device may be different from that of the light emitting device. Components are named based on their function. For example, a hole injection layer is a layer that It functions as an injection layer in a light-receiving device and as a hole transport layer in a light-receiving device. The doping layer functions as an electron injection layer in a light-emitting device and an electron transport layer in a light-receiving device. The hole transport layer functions as a positive hole transport layer in both the light-emitting device and the light-receiving device. Similarly, electron transport layers function as hole transport layers in both light-emitting and light-receiving devices. It functions as an electron transport layer in the

[0314] The light-emitting device described in Embodiment 1 can be used in a display device according to one embodiment of the present invention. The configuration and features of the light emitting device of the display device of this embodiment are the same as those of the first embodiment. Therefore, detailed explanations may be omitted.

[0315] When the light receiving device is used as an image sensor, the display device of the present embodiment is can be used to capture an image.

[0316] For example, using an image sensor to acquire data such as fingerprints, palm prints, or irises. That is, the display device of this embodiment can incorporate a biometric authentication sensor. By incorporating a biometric authentication sensor into the display device, it is possible to install a biometric authentication sensor separately from the display device. Compared to when a switch is provided, the number of parts in the electronic device can be reduced, and the electronic device can be made smaller and lighter. It is possible to do this.

[0317] In addition, the image sensor is used to measure the user's facial expression, eye movement, or changes in pupil diameter. By analyzing this data, the user's physical and mental information can be obtained. Based on this information, the display and / or audio output contents can be changed. By doing so, for example, it will be possible to develop devices for VR (Virtual Reality) and AR (Au Devices for Enhanced Reality or Mixed Reality ) devices, it is possible to ensure that users can use the devices safely.

[0318] In addition, when the light receiving device is used as a touch sensor, the display device of the present embodiment The chair can be used to detect the proximity or contact of an object.

[0319] As the light receiving device, for example, a pn-type or pin-type photodiode is used. The light-receiving device is a photoelectric converter that detects the light incident on the device and generates an electric charge. It functions as a photoelectric conversion device, and the amount of charge generated is determined by the amount of incident light.

[0320] In particular, an organic photodiode having a layer containing an organic compound is used as the light receiving device. The organic photodiode can be easily made thin, lightweight, and large in area. Furthermore, since there is a high degree of freedom in shape and design, it can be applied to a variety of display devices.

[0321] In one embodiment of the present invention, an organic EL device is used as the light-emitting device, and a An organic photodiode is used. The organic photodiode has the same structure as an organic EL device. Therefore, it is possible to incorporate a light-receiving device into a display device without significantly increasing the manufacturing process. For example, the active layer of a light-receiving device and the light-emitting layer of a light-emitting device can be integrated. The other layers can be made to have the same structure for the light-emitting device and the light-receiving device. can.

[0322] 12A to 12D show cross-sectional views of a display device according to one embodiment of the present invention.

[0323] The display device 50A shown in FIG. 12A has a light receiving device between a substrate 151 and a substrate 152. and layer 57 having a light emitting device.

[0324] A display device 50B shown in FIG. 12B has a light receiving device between a substrate 151 and a substrate 152. layer 53 having a transistor; layer 55 having a light-emitting device; and layer 57 having a light-emitting device. .

[0325] The display device 50A and the display device 50B emit red (R) light from the layer 57 having the light-emitting device. The LED emits light in the form of green (G) light, blue (B) light, and infrared (IR) light.

[0326] The structure of the layer 57 having the light-emitting device can be referred to the structure of the light-emitting device of the first embodiment. That is, the light emitting device included in the light emitting device of the first embodiment can be It can be used for the layer 57.

[0327] The transistor-containing layer 55 includes a first transistor and a second transistor. Preferably, the first transistor is electrically connected to the light receiving device. The transistor is electrically connected to the light emitting device.

[0328] The layer 53 having the light receiving device may be configured to detect visible light, infrared light, or The sensor can be configured to detect both visible light and infrared light. The wavelength of light detected by the optical device can be determined.

[0329] The display device according to one embodiment of the present invention has a function of detecting an object such as a finger that is in contact with the display device. For example, as shown in FIG. 12C, in layer 57 having a light-emitting device, The light emitted by the light emitting device is reflected by the finger 52 that is in contact with the display device 50B, and is received. The light-receiving device in the device-containing layer 53 detects the reflected light. It is possible to detect that a finger 52 has come into contact with the display device 50B.

[0330] The display device according to one embodiment of the present invention is located adjacent to the display device 50B (as shown in FIG. 12D). The sensor may have the ability to detect or capture an object (without contact).

[0331] [Pixels] 13A to 13E show an example of a pixel.

[0332] A display device according to one embodiment of the present invention has a plurality of pixels arranged in a matrix. A pixel has one or more sub-pixels. One sub-pixel has one light-emitting device. For example, For example, a pixel may have three sub-pixels (three colors of R, G, and B, or yellow (Y), cyan (C), and magenta (M), or a structure with four sub-pixels (R, G, , B, and white (W), or four colors (R, G, B, Y, etc.) can be applied.

[0333] In the display device according to one aspect of the present invention, at least one of the sub-pixels constituting a pixel is irradiated with visible light. Additionally, it is configured to emit infrared light.

[0334] Furthermore, the pixel has a light receiving device. The light receiving device is provided in every pixel. Alternatively, one pixel may have a plurality of light receiving devices. It may have.

[0335] The pixel shown in FIGS. 13A to 13D has three sub-pixels (three light-emitting devices) of R, G, and B. 13A and 13D show that the red (R) sub-pixel receives infrared light. In FIG. 13B, the green (G) subpixel emits infrared light (IR). FIG. 13C shows a configuration in which the blue (B) subpixel emits infrared light (IR). be.

[0336] 13A to 13C show a 2×2 matrix of three sub-pixels and a light receiving device PD. FIG. 13D shows an example in which three sub-pixels and a light receiving device PD are arranged in one horizontal row. This is an example of the layout.

[0337] The pixel shown in FIG. 13E has four sub-pixels (four light-emitting devices) of R, G, B, and W, and a light-receiving The device has a device PD.

[0338] 13D and 13E show a configuration in which the red (R) subpixel emits infrared light (IR), The present invention is not limited to this, and the sub-pixels of other colors may be configured to emit infrared light.

[0339] The structure of a display device according to one embodiment of the present invention will be described below with reference to FIGS. 14 to 19. In the following, we will refer to the light-emitting devices that emit G and B light among the three light-emitting devices of R, G, and B. The structure of the light emitting device that emits R light is the same as that of the light emitting device that emits G light. It can be the same as a chair.

[0340] [Display device 10A] FIG. 14A shows a cross-sectional view of the display device 10A.

[0341] The display device 10A includes a light receiving device 110, a light emitting device 190B, and a light emitting device 19 The light receiving device 110 has a function of detecting infrared light 21N. The light emitting device 190B has a function of emitting blue light 21B and infrared light 21N. 90G has the function of emitting green light 21G.

[0342] The light receiving device 110 may have a function to detect not only infrared light but also visible light. Furthermore, the light emitting device that emits the infrared light 21N is not limited to the light emitting device 190B. At least one of the light emitting devices that emit visible light (e.g., red, green, blue, etc.) is connected to an infrared It can be configured to have a function of emitting light 21N.

[0343] The light-emitting device 190B includes a pixel electrode 191, a buffer layer 192B, a light-emitting layer 193B, and a light-emitting The layer 193N, the buffer layer 194B, and the common electrode 115 are included. Although the light-emitting layer 193B and the light-emitting layer 193N are described as one layer, the light-emitting layer 193B and the light-emitting layer 193 N are separate layers. Since light-emitting device 190B is a top-emitting type, As explained in the first embodiment, the light-emitting layer 193N is provided between the pixel electrode 191 and the light-emitting layer 193B. It is preferable that

[0344] The light-emitting device 190G includes a pixel electrode 191, a buffer layer 192G, a light-emitting layer 193G, a buffer layer 194G, a buffer layer 195G, a buffer layer 196G, a buffer layer 197G, a buffer layer 198G, a buffer layer 199G, a buffer layer 191G, a buffer layer 192G, a buffer layer 193G, a buffer layer 194 The layer 194G includes a common electrode 115.

[0345] The light receiving device 110 includes a pixel electrode 181, a buffer layer 182, an active layer 183, and a buffer layer 184 and a common electrode 115.

[0346] Pixel electrode 181, buffer layer 182, buffer layer 192B, buffer layer 192G, active layer 183, light-emitting layer 193B, light-emitting layer 193N, light-emitting layer 193G, buffer layer 184, buffer The insulating layer 194B, the buffer layer 194G, and the common electrode 115 each have a single-layer structure. It may have a laminated structure.

[0347] The pixel electrode 181 and the pixel electrode 191 are located on the insulating layer 214. The element electrodes 191 can be formed using the same material and in the same process.

[0348] The display device 10A has an active layer 183 of the light receiving device 110 and an active layer 184 of the light emitting device 190. In addition to the light-emitting layer 193, other layers (buffer layers) are also separately fabricated. Specifically, the light receiving device 110, the light emitting device 190B, and the light emitting device 190G are A common layer is provided between the pair of electrodes (pixel electrode 181 or pixel electrode 191 and common electrode 115). Here is an example of what not to do.

[0349] The light receiving device 110 and the light emitting device 190 are formed by forming a pixel electrode 181 and a pixel electrode 182 on an insulating layer 214. The pixel electrode 181 and the buffer layer 18 are formed from the same material and in the same process. 2, an active layer 183 and a buffer layer 184 are formed, and the buffer layer 19 is formed on the pixel electrode 191. 2, after forming the light-emitting layer 193 and the buffer layer 194, the pixel electrode 181 and the pixel electrode 19 1, buffer layer 182, buffer layer 192, active layer 183, light-emitting layer 193, buffer layer 1 The common electrode 115 can be formed to cover the insulating layer 84 and the buffer layer 194 . The stacked structure of the buffer layer 182, the active layer 183, and the buffer layer 184 and the buffer The order in which the layer 192, the light-emitting layer 193, and the buffer layer 194 are formed is not particularly limited. For example, after the buffer layer 182, the active layer 183, and the buffer layer 184 are formed, A buffer layer 192, a light-emitting layer 193, and a buffer layer 194 may be fabricated. Before the formation of the silicon layer 182, the active layer 183, and the buffer layer 184, a buffer layer 192, The light-emitting layer 193 and the buffer layer 194 may be formed. The layer 192B, the buffer layer 192G, the active layer 183, the light-emitting layer 193N, etc. are alternately arranged in this order. Alternatively, a film may be formed on the surface of the substrate.

[0350] As the buffer layer 182, for example, a hole transport layer can be formed. The buffer layer 192B and the buffer layer 192G may be, for example, a hole injection layer or a hole transport layer. can form both.

[0351] The active layer 183 overlaps with the pixel electrode 181 via the buffer layer 182. The active layer 183 overlaps with the common electrode 115 via the buffer layer 184. Specifically, the active layer 183 includes an organic EL element, which is included in the light-emitting layer 193 of the light-emitting device 190. The compound has a different organic compound.

[0352] The light-emitting layer 193B and the light-emitting layer 193N are connected to the pixel electrode 191 via the buffer layer 192B. The light-emitting layer 193B and the light-emitting layer 193N are connected to a common electrode via a buffer layer 194B. The light-emitting layer 193B includes a light-emitting material that emits blue light. N has a luminescent material that emits infrared light.

[0353] The light-emitting layer 193G overlaps with the pixel electrode 191 via the buffer layer 192G. The light-emitting layer 193G overlaps the common electrode 115 via a buffer layer 194G. It has a luminescent material that emits colored light.

[0354] As the buffer layer 184, for example, an electron transport layer can be formed. The buffer layer 194B and the buffer layer 194G may be, for example, an electron injection layer or an electron transport layer. can form both.

[0355] The common electrode 115 is connected to the buffer layer 182, the active layer 183, and the buffer layer 184 via the buffer layer 182, the active layer 183, and the buffer layer 184. The common electrode 115 has a portion overlapping with the pixel electrode 181. The common electrode 115 also has a buffer layer 192B, The pixel electrode 181 is connected to the light-emitting layer 193B, the light-emitting layer 193N, and the buffer layer 194B via the light-emitting layer 193B. Furthermore, the common electrode 115 has an overlapping portion. , and has a portion overlapping with the pixel electrode 191 via the buffer layer 194G. 15 is common to the light receiving device 110, the light emitting device 190B, and the light emitting device 190G. This is the layer used in

[0356] In the display device of this embodiment, an organic compound is used for the active layer 183 of the light receiving device 110. The light receiving device 110 is a light emitting device 190 (EL device) between a pair of electrodes. It can be manufactured by simply changing at least a part of the configuration. The light receiving device 110 can be built into the part.

[0357] The display device 10A includes a pair of substrates (substrate 151 and substrate 152) and a light receiving device 110 disposed between the substrates. , light emitting device 190B, light emitting device 190G, transistor 41, and transistor It has 42 etc.

[0358] In the light receiving device 110, the pixel electrodes 181 and the common electrode 115 are located between the pixel electrodes 181 and the common electrode 115. The buffer layer 182, the active layer 183, and the buffer layer 184 are organic layers (containing organic compounds). The pixel electrode 181 has the function of reflecting visible light and infrared light. The edge of the pixel electrode 181 is preferably covered by a partition wall 216. 15 has the function of transmitting visible light and infrared light.

[0359] The light receiving device 110 has a function of detecting light. Specifically, the light receiving device 110 , a photoelectric conversion unit that receives light 22 incident from outside the display device 10A and converts it into an electrical signal; The light 22 is light emitted from the light-emitting device 190 and reflected by an object. The light 22 may also be incident on the light receiving device 110 via a lens, which will be described later. stomach.

[0360] It is preferable to provide a light-shielding layer BM on the surface of the substrate 152 facing the substrate 151. , and has openings at positions overlapping the light receiving device 110 and the light emitting device 190. By providing the light-shielding layer BM, it is possible to control the range in which the light-receiving device 110 detects light. can.

[0361] Here, the light emitted by the light emitting device 190 is reflected by the object and received by the light receiving device 110. However, the light emitted from the light emitting device 190 is reflected within the display device 10A and is detected by the object. The light may be incident on the light receiving device 110 without passing through an object. For example, when the light-shielding layer BM is not provided, the influence of stray light can be suppressed. The light 23a emitted by the light emitting device 190 is reflected by the substrate 152, and the reflected light 23b is received. The light blocking layer BM blocks the reflected light 23b from entering the device 110. This can reduce noise and prevent light from entering the light receiving device 110. The sensitivity of the sensor using the sensor 110 can be improved.

[0362] In the light-emitting device 190, the pixel electrodes 191 and the common electrode 115 are located between the pixel electrodes 191 and the common electrode 115. The buffer layer 192, the light-emitting layer 193, and the buffer layer 194 can also be called an EL layer. The pixel electrode 191 preferably has a function of reflecting visible light and infrared light. The end of the electrode 191 is covered by a partition wall 216. The common electrode 115 is electrically insulated from one another by a partition wall 216. It has the function of transmitting light.

[0363] The light emitting device 190B has a function of emitting visible light and infrared light. The device 190B applies a voltage between the pixel electrode 191 and the common electrode 115. Electroluminescence that emits visible light (blue light 21B) and infrared light (infrared light 21N) to the plate 152 side It is a device.

[0364] The light-emitting device 190G has a function of emitting visible light. 0G is a voltage applied between the pixel electrode 191 and the common electrode 115, It is an electroluminescent device that emits visible light (green light 21G).

[0365] The light-emitting layer 193 is preferably formed so as not to overlap the light-receiving region of the light-receiving device 110. This makes it possible to prevent the light emitting layer 193 from absorbing the light 22, and The amount of light irradiated onto the object 10 can be increased.

[0366] The pixel electrode 181 is connected to the transistor 41 through an opening provided in the insulating layer 214. The edge of the pixel electrode 181 is electrically connected to the source or drain. It is covered with

[0367] The pixel electrode 191 is connected to the transistor 42 through an opening provided in the insulating layer 214. The edge of the pixel electrode 191 is electrically connected to the source or drain. The transistor 42 has a function of controlling the driving of the light emitting device 190. do.

[0368] The transistors 41 and 42 are connected to the same layer (substrate 151 in FIG. 14A). is doing.

[0369] At least a part of the circuit electrically connected to the light receiving device 110 is connected to the light emitting device 190. It is preferable that the circuit be formed from the same material and in the same process as the circuit to which it is electrically connected. This makes it possible to reduce the thickness of the display device compared to when the two circuits are formed separately. Furthermore, the manufacturing process can be simplified.

[0370] The light receiving device 110 and the light emitting device 190 are each covered with a protective layer 195. In FIG. 14A, the protective layer 195 is provided on and in contact with the common electrode 115. By providing the protective layer 195, the light-receiving device 110 and the light-emitting device 190 are protected from water and other The intrusion of impurities is suppressed, and the reliability of the light receiving device 110 and the light emitting device 190 is improved. In addition, the adhesive layer 142 can improve the adhesion between the protective layer 195 and the substrate 152. It's pasted together.

[0371] As shown in FIG. 14B, a protective layer is formed on the light receiving device 110 and the light emitting device 190. In FIG. 14B, the adhesive layer 142 connects the common electrode 115 and the substrate. 152 is pasted together.

[0372] [Display device 10B] FIG. 14B shows a cross-sectional view of the display device 10B. Description of the same configuration as the display device described above may be omitted.

[0373] The display device 10B includes a buffer layer 182, a buffer layer 192B, and a buffer layer 192G. The display device 10A differs from the display device 10A in that it does not have a common layer 112 but has a common layer 112.

[0374] The common layer 112 is located on the pixel electrode 181 and the pixel electrode 191. The common layer 112 is The light receiving device 110, the light emitting device 190B, and the light emitting device 190G are commonly used. This is the layer that can be

[0375] The common layer 112 may be, for example, a hole injection layer or a hole transport layer. The common layer 112 may have a single layer structure or a laminated structure.

[0376] At least some of the layers other than the active layer and the light-emitting layer are alternately formed between the light-receiving device and the light-emitting device. By using a common structure for all the display devices, the number of manufacturing steps of the display device can be reduced, which is preferable.

[0377] [Display device 10C] FIG. 14C shows a cross-sectional view of the display device 10C.

[0378] The display device 10C includes a buffer layer 184, a buffer layer 194B, and a buffer layer 194G. The display device 10A differs from the display device 10A in that it does not have a common layer 114 but has a common layer 114.

[0379] The common layer 114 is formed on the partition wall 216, the active layer 183, the light-emitting layer 193B, and the light-emitting layer 193N. The common layer 114 is located on the light-receiving device 110, the light-emitting device 193G, and the light-emitting layer 193G. This layer is commonly used in the light emitting device 190B and the light emitting device 190G.

[0380] The common layer 114 may be, for example, an electron injection layer or an electron transport layer. The common layer 114 may have a single layer structure or a laminated structure.

[0381] At least some of the layers other than the active layer and the light-emitting layer are alternately formed between the light-receiving device and the light-emitting device. By using a common structure for all the display devices, the number of manufacturing steps of the display device can be reduced, which is preferable.

[0382] [Display device 10D] FIG. 15A shows a cross-sectional view of the display device 10D.

[0383] The display device 10D includes a buffer layer 182, a buffer layer 192B, a buffer layer 192G, and a buffer layer 192C. The common layer 112 and the buffer layer 194B and the buffer layer 194G are not included. The display device 10 differs from the display device 10A in that it has a common layer 114.

[0384] In the display device of this embodiment, an organic compound is used for the active layer 183 of the light receiving device 110. The light-receiving device 110 is configured such that the layers other than the active layer 183 are the same as the light-emitting device 190 (EL device ) can be made to have a common structure with the active layer. By simply adding a step of depositing the layer 183, the light-receiving device can be formed in parallel with the formation of the light-emitting device 190. The light-emitting device 190 and the light-receiving device 110 can also be formed. Therefore, the number of manufacturing steps can be reduced significantly. The light receiving device 110 can be built into the display device.

[0385] In the display device 10D, the active layer 183 of the light-receiving device 110 and the light-emitting layer 190 of the light-emitting device 190 are The light receiving device 110 and the light emitting device 190 have the same structure except for the layer 193. However, the configuration of the light receiving device 110 and the light emitting device 190 is not limited to this. The light receiving device 110 and the light emitting device 190 are formed by an active layer 183 and a light emitting layer 193. In addition, the display device 10A, 10B, and the display device 20A may have layers that are made separately. 10C). The light receiving device 110 and the light emitting device 190 share a common layer (see common layer). It is preferable that the film has one or more layers. This allows the number of manufacturing steps to be reduced significantly. The light receiving device 110 can be built into the display device.

[0386] [Display device 10E] FIG. 15B shows a cross-sectional view of the display device 10E.

[0387] The display device 10E shown in FIG. 15B has a lens 149 in addition to the configuration of the display device 10A. .

[0388] The display device of this embodiment may have a lens 149. The lens 149 is a light receiving device. In the display device 10E, the lens 149 is disposed at a position overlapping the vice 110. The lens 149 of the display device 10E is provided on the substrate 151 side. Alternatively, the lens 149 may have a convex surface facing the substrate 152.

[0389] When both the light-shielding layer BM and the lens 149 are formed on the same surface of the substrate 152, the order of formation does not matter. FIG. 15B shows an example in which the lens 149 is formed first, but the light-shielding layer BM may be formed first. In Figure 15B, the edge of the lens 149 is covered with a light-shielding layer BM.

[0390] The display device 10E is configured such that light 22 enters the light receiving device 110 via a lens 149. When the lens 149 is provided, the light receiving device 1 is more reflective than when the lens 149 is not provided. The imaging range of the light receiving device 10 can be narrowed, and the imaging range of the light receiving device 110 overlaps with that of the adjacent light receiving device 110. This allows for capturing clear images with less blur. If the imaging range of the device 110 is the same, the imaging range with the lens 149 is different from the imaging range without the lens 149. In FIG. 15B, the size of the pinhole (the light-shielding layer overlapping the light-receiving device 110) is smaller than that in the case where the pinhole is not overlapped. Therefore, the lens 149 By having this, the amount of light incident on the light receiving device 110 can be increased.

[0391] In addition, a lens 149 having a convex surface on the substrate 152 side is provided in contact with the upper surface of the protective layer 195. Furthermore, a lens array may be provided on the display surface side of the substrate 152 (the side opposite to the surface on the substrate 151 side). The lenses of the lens array may be provided at positions overlapping the light receiving device 110. It is preferable that a light-shielding layer BM is provided on the surface of the substrate 152 facing the substrate 151.

[0392] The method for forming the lenses used in the display device of this embodiment is to form the lenses on the substrate or the light receiving device. A lens such as a microlens may be formed directly on the substrate, or a separately manufactured microlens may be formed on the substrate. A lens array such as a lens array may be attached to the substrate.

[0393] [Display device 10F] FIG. 15C shows a cross-sectional view of the display device 10F.

[0394] The display device 10F shown in FIG. 15C does not have the substrate 151, the substrate 152, and the partition wall 216. The substrate 153, the substrate 154, the adhesive layer 155, the insulating layer 212, and the partition wall 217 are included. This is different from the display device 10D.

[0395] The substrate 153 and the insulating layer 212 are bonded together by an adhesive layer 155. The protective layer 195 is bonded to the substrate 190 by an adhesive layer 142 .

[0396] The display device 10F includes an insulating layer 212, a transistor 41, and a transistor The star 42, the light receiving device 110, the light emitting device 190, etc. are transposed onto the substrate 153. The substrate 153 and the substrate 154 are each flexible. This makes it possible to improve the flexibility of the display device 10F. For example, It is preferable to use resin for the substrate 153 and the substrate 154. A film having high optical isotropy may be used for the substrate of the display device of this form.

[0397] The partition 217 preferably absorbs light emitted by the light-emitting device. For example, a black matrix can be formed using a resin material containing a pigment or a dye. In addition, by using a brown resist material, the partition wall 217 can be formed with a colored insulating layer. It can be achieved.

[0398] The light emitted by the light-emitting device 190 is reflected by the substrate 152 and the partition wall 217, and the reflected light is received. The light emitted by the light-emitting device 190 may be incident on the partition wall 21. 7 and is reflected by a transistor or wiring, etc., and the reflected light is received by the light receiving device 11 The light is absorbed by the partition wall 217, and such reflected light This can prevent the light from being incident on the light receiving device 110. The sensitivity of a sensor using device 110 can be increased.

[0399] The partition 217 preferably absorbs at least the wavelength of light detected by the light receiving device 110. For example, the light receiving device 110 receives green light 21G emitted from the light emitting device 190G. For detection, the partition 217 preferably absorbs at least green light. If the partition wall 217 has a red color filter, it can absorb and reflect green light. This can prevent light from entering the light receiving device 110.

[0400] In addition, a light-absorbing active material is provided in contact with one or both of the upper and side surfaces of the partition wall 216 through which light passes. A color layer may be provided. The color layer preferably absorbs the light emitted by the light-emitting device. As the color layer, for example, a black matrix is formed using a resin material containing a pigment or a dye. In addition, by using a brown resist material, it is possible to form an effective colored insulating layer. A color layer can be configured.

[0401] The colored layer preferably absorbs at least the wavelength of light that the light receiving device 110 detects. For example, the light receiving device 110 detects green light 21G emitted from the light emitting device 190G. In this case, it is preferable that the colored layer absorbs at least green light. The red color filter can absorb the green light, and the reflected light can be transmitted to the light receiving device. This can prevent light from entering the chair 110.

[0402] The colored layer absorbs stray light generated in the display device 10F, and the light incident on the light receiving device 110 is This reduces the amount of stray light that enters the optical receiver 110. The sensitivity of the sensor can be increased.

[0403] In the display device of this embodiment, the colored layer is a light receiving device 110 and a light emitting device 190. As a result, light incident from the light emitting device 190 to the light receiving device 110 is disposed between the light emitting device 190 and the light receiving device 110. This can suppress stray light.

[0404] Hereinafter, a more detailed configuration of a display device according to one embodiment of the present invention will be described with reference to FIGS. 16 to 19. and explain.

[0405] [Display device 100A] 16 shows a cross-sectional view of the display device 100A. The display device 100A is the same as the display device shown in FIG. The light emitting unit 163 of the optical device 200A is replaced with a display unit 162. In this case, as shown in FIG. The configuration shown in FIG. 1 is a display module having a display device 100A, an IC, and an FPC. It is also possible.

[0406] FIG. 16 shows a part of the area including the FPC 172 and an area including the circuit 164 of the display device 100A. A part of the area including the display unit 162 and a part of the area including the end portion are cut out. An example of the cross section is shown below.

[0407] The display device 100A shown in FIG. 16 includes a transistor 201 between a substrate 151 and a substrate 152. , transistor 205, transistor 206, transistor 207, light emitting device 190 B, a light-emitting device 190G, a light-receiving device 110, etc.

[0408] The substrate 152 and the insulating layer 214 are bonded together via an adhesive layer 142. B, the light emitting device 190G and the light receiving device 110 are sealed using a solid sealing structure or a In FIG. 16, a substrate 152, an adhesive layer 142, and an insulating layer 21 are provided. The space 143 surrounded by the 4 is filled with an inert gas (such as nitrogen or argon) and is hollow. The adhesive layer 142 is formed on the light emitting device 190B and the light emitting device 190C. 0G, and the light receiving device 110. The space 143 surrounded by the layer 142 and the insulating layer 214 is filled with a resin different from that of the adhesive layer 142. You may fill it.

[0409] The light-emitting device 190B is made up of, from the insulating layer 214 side, a pixel electrode 191B, a common layer 112, and a light-emitting layer 193N, a light-emitting layer 193B, a common layer 114, and a common electrode 115 are laminated in this order. The pixel electrode 191B is connected to the transistor through an opening provided in the insulating layer 214. The transistor 206 is connected to the conductive layer 222b of the light-emitting device. It has the function of controlling the drive of the sensor 190B.

[0410] The light-emitting device 190G is made up of, from the insulating layer 214 side, a pixel electrode 191G, a common layer 112, and a light-emitting layer 193G, the common layer 114, and the common electrode 115 are stacked in this order. The electrode 191G is connected to the gate electrode 191G of the transistor 207 through an opening provided in the insulating layer 214. The transistor 207 is connected to the conductive layer 222b. It has the function of controlling the above.

[0411] The end of the pixel electrode 191B and the end of the pixel electrode 191G are covered with a partition wall 216. The pixel electrode 191B and the pixel electrode 191G contain a material that reflects visible light and infrared light. The common electrode 115 includes a material that is transparent to visible and infrared light.

[0412] The light receiving device 110 is made up of a pixel electrode 181, a common layer 112, an active layer 18, and a 3, a common layer 114, and a common electrode 115 are laminated in this order. The conductive layer 212 of the transistor 205 is connected to the insulating layer 214 through an opening formed in the insulating layer 214. The end of the pixel electrode 181 is covered with a partition wall 216. The pixel electrode 181 includes a material that reflects visible light and infrared light, and the common electrode 115 includes a material that reflects visible light and infrared light. It includes materials that are transparent to visible and infrared light.

[0413] The light emitted from the light emitting device 190 is emitted to the substrate 152 side. Light is incident on the substrate 152 through the space 143. It is preferable to use a material that is highly transparent to infrared light.

[0414] The pixel electrode 181 and the pixel electrode 191 can be manufactured using the same material and the same process. The common layer 112, the common layer 114, and the common electrode 115 are connected to the light-receiving device 110 and the light-emitting device. The light receiving device 110 and the light emitting device 190 are both active The layers 183 and 193 may have the same structure except for the different structures. This allows the light receiving device 110 to be incorporated into the display device 100A without significantly increasing the number of manufacturing steps. It can be stored.

[0415] A light-shielding layer BM is provided on the surface of the substrate 152 facing the substrate 151. The light-shielding film 110 has openings at positions overlapping with the light-emitting device 110 and the light-emitting device 190. By providing the layer BM, the range in which the light-receiving device 110 detects light can be controlled. Furthermore, by providing the light-shielding layer BM, light can be transmitted from the light-emitting device 190 to the light-receiving device 190 without passing through an object. Therefore, the noise is small and the sensitivity is high. High-performance sensors can be realized.

[0416] Transistor 201, transistor 205, transistor 206, and transistor 20 7 are all formed on a substrate 151. These transistors are made of the same material and The same process can be used to manufacture the same.

[0417] On the substrate 151, an insulating layer 211, an insulating layer 213, an insulating layer 215, and an insulating layer 214 are formed. The insulating layer 211 has a portion serving as a gate insulating layer for each transistor. A part of the insulating layer 213 functions as a gate insulating layer for each transistor. An insulating layer 215 is provided over the transistor. An insulating layer 214 is provided over the transistor. The number of gate insulating layers and the number of transistors are determined by the number of gate insulating layers. The number of insulating layers covering the star is not limited, and each may be a single layer or two or more layers.

[0418] At least one insulating layer covering the transistor is made of a material that is resistant to the diffusion of impurities such as water and hydrogen. It is preferable to use a material such that the insulating layer can function as a barrier layer. This structure effectively prevents impurities from diffusing into the transistor from the outside. This effectively suppresses the noise and improves the reliability of the display device.

[0419] The insulating layers 211, 213, and 215 are each made of an inorganic insulating film. It is preferable that

[0420] Here, organic insulating films often have lower barrier properties than inorganic insulating films. The insulating film preferably has an opening near the edge of the display device 100A. Therefore, it is possible to prevent impurities from entering from the end of the display device 100A through the organic insulating film. Alternatively, the organic insulating film may be arranged so that the edge of the organic insulating film is located inside the edge of the display device 100A. An insulating film may be formed so that the organic insulating film is not exposed at the edge of the display device 100A.

[0421] An organic insulating film is suitable for the insulating layer 214 that functions as a planarizing layer. At 228, an opening is formed in the insulating layer 214. This allows the insulating layer 214 to have an organic insulating layer. Even when an insulating film is used, impurities may enter the display unit 162 from the outside through the insulating layer 214. Therefore, the reliability of the display device 100A can be improved. .

[0422] The structure of the transistors in the display device 100A is the same as that in the light-emitting device 200A (FIG. 10A). Since the structure of the transistor is similar to that of the conventional transistor, detailed description thereof will be omitted.

[0423] The structure of the transistor included in the display device of this embodiment is not particularly limited. The display device may include, for example, a transistor that can be used in the light-emitting device described in the first embodiment. A transistor can be applied.

[0424] A connection portion 204 is provided in the area of the substrate 151 where the substrate 152 does not overlap. In the portion 204, the wiring 165 is electrically connected to the FPC 172 via the conductive layer 166 and the connection layer 242. The upper surface of the connection portion 204 is made of the same conductive film as the pixel electrode 191. The resulting conductive layer 166 is exposed. This allows the connection portion 204 and the FPC 172 to be connected. Electrical connection can be made via interconnect layer 242.

[0425] Various optical members can be arranged on the outside of the substrate 152. Examples of optical members include a polarizing plate. Examples of the optical film include a retardation plate, a light diffusion layer (such as a diffusion film), an anti-reflection layer, and a light collecting film. The outside of the substrate 152 is coated with an anti-static film to prevent dust from adhering, It is equipped with a water-repellent film that protects the surface, a hard coating that prevents scratches from occurring during use, and an impact absorbing layer. It may be placed.

[0426] The materials that can be used for each component of the display device are the same as those described in Embodiment 1. Materials that can be used for each component of a light-emitting device can be applied. Cut.

[0427] The light emitting device 190 may be a top-emitting type, a bottom-emitting type, a dual-emitting type, or a The electrode on the light extraction side is made of a conductive film that transmits visible light and infrared light. In addition, a conductive film that reflects visible light and infrared light is used for the electrode on the side where light is not extracted. It is preferable that

[0428] Light-emitting device 190B emits infrared (IR) and blue (B) light. Light-emitting device 190B has at least light-emitting layer 193B and light-emitting layer 193N. The light-emitting device 190G has at least a light-emitting layer 193G. The light-emitting device 190 includes layers other than the light-emitting layer 193, such as a material with high hole injection properties, a material with high transport properties, a hole blocking material, a material with high electron transport properties, a material with high electron injection properties, Alternatively, the common layer 112 may further include a layer containing a bipolar material. It is preferable that the layer has one or both of a hole injection layer and a hole transport layer. For example, The layer 114 preferably has one or both of an electron transport layer and an electron injection layer.

[0429] The common layer 112, the light-emitting layer 193, and the common layer 114 contain low-molecular-weight compounds and high-molecular-weight compounds. The common layer 112 and the light-emitting layer 1 may contain an inorganic compound. The layers constituting the common layer 114 and the layer 93 are formed by deposition (including vacuum deposition), transfer, respectively. The film can be formed by a method such as a printing method, an ink jet method, or a coating method.

[0430] The light-emitting layer 193 may contain an inorganic compound such as quantum dots as a light-emitting material.

[0431] The active layer 183 of the light-receiving device 110 includes a semiconductor, such as silicon. Examples of the semiconductor include inorganic semiconductors and organic semiconductors containing organic compounds. An example in which an organic semiconductor is used as the semiconductor in the active layer is shown below. The light-emitting layer 193 of the light-emitting device 190 and the active layer 183 of the light-receiving device 110 are formed in the same layer. This is preferable because it can be formed by a method (for example, a vacuum deposition method) and the manufacturing equipment can be shared. stomach.

[0432] The active layer 183 is made of an n-type semiconductor material, such as fullerene (e.g., C 60 , C 70 etc. ) or its derivatives. As a p-type semiconductor material, copper(II) phthalocyanine (Copper(II) phthalocyanine (CuPc) and tetraphenyldibenzoperiflanthene Tetraphenyldibenzoperiflanthene (DBP) and other Examples of suitable semiconductor materials include electron donating organic semiconductor materials.

[0433] For example, the active layer 183 is preferably formed by co-evaporating an n-type semiconductor and a p-type semiconductor. .

[0434] [Display device 100B] FIG. 17A shows a cross-sectional view of the display device 100B.

[0435] The display device 100B is mainly different from the display device 100 in that it has a lens 149 and a protective layer 195. Different from A.

[0436] By providing a protective layer 195 that covers the light receiving device 110 and the light emitting device 190, The device 110 and the light-emitting device 190 are prevented from being penetrated by impurities such as water. This can improve the reliability of the device 110 and the light emitting device 190.

[0437] In a region 228 near the edge of the display device 100B, an insulating layer 214 is formed through an opening in the insulating layer 214. It is preferable that the insulating layer 215 and the protective layer 195 contact each other. It is preferable that the inorganic insulating film and the inorganic insulating film of the protective layer 195 are in contact with each other. This prevents impurities from entering the display section 162 from the outside via the organic insulating film. Therefore, the reliability of the display device 100B can be improved.

[0438] 17B shows an example in which the protective layer 195 has a three-layer structure. The inorganic insulating layer 195a on the common electrode 115 and the organic insulating layer 19 on the inorganic insulating layer 195a are 5b and an inorganic insulating layer 195c on the organic insulating layer 195b.

[0439] The end of the inorganic insulating layer 195a and the end of the inorganic insulating layer 195c are closer to each other than the end of the organic insulating layer 195b. The inorganic insulating layer 195a extends outward and contacts the insulating layer 214( The insulating layer 215 (inorganic insulating layer) is in contact with the insulating layer 215 through the opening in the insulating layer 215. The layer 215 and the protective layer 195 may enclose the light receiving device 110 and the light emitting device 190. Therefore, the reliability of the light receiving device 110 and the light emitting device 190 can be improved. .

[0440] In this way, the protective layer 195 may have a laminated structure of an organic insulating film and an inorganic insulating film. In this case, it is preferable that the end of the inorganic insulating film extends further outward than the end of the organic insulating film.

[0441] A lens 149 is provided on the surface of the substrate 152 facing the substrate 151. The light receiving area of the light receiving device 110 overlaps with the lens 149. It is also preferable that the light-receiving device 110 does not overlap with the light-emitting layer 193. This can increase the sensitivity and accuracy of the sensor.

[0442] The lens 149 preferably has a refractive index of 1.3 or more and 2.5 or less. The insulating layer can be formed using at least one of an inorganic material and an organic material. A material containing oil can be used for the lens 149. Also, a material containing at least an oxide and a sulfide can be used. Materials including either can be used for the lens 149.

[0443] Specifically, resins containing chlorine, bromine, or iodine, resins containing heavy metal atoms, and resins containing aromatic rings Resin containing sulfur or resin containing sulfur can be used for the lens 149. The lens 149 can be made of a material containing nanoparticles of a material with a higher refractive index than resin. Titanium oxide or zirconium oxide can be used for the nanoparticles.

[0444] Also, cerium oxide, hafnium oxide, lanthanum oxide, magnesium oxide, niobium oxide, Tantalum oxide, titanium oxide, yttrium oxide, zinc oxide, oxides containing indium and tin The lens 149 may be made of a material such as an oxide containing indium, gallium, and zinc. Alternatively, zinc sulfide or the like can be used for the lens 149.

[0445] In the display device 100B, the protective layer 195 and the substrate 152 are bonded together by the adhesive layer 142. The adhesive layer 142 adheres to the light-receiving device 110 and the light-emitting device 190, respectively. The display device 100B has a solid sealing structure.

[0446] [Display device 100C] FIG. 18A shows a cross-sectional view of the display device 100C.

[0447] The display device 100C differs from the display device 100B in the structure of the transistors.

[0448] The display device 100C includes a transistor 202, a transistor 209, and a It has a transistor 210.

[0449] The structure of the transistors in the display device 100C is the same as that in the light-emitting device 200B (FIG. 11A). Since the structure of the transistor is similar to that of the conventional transistor, detailed description thereof will be omitted.

[0450] 18A shows an example in which the insulating layer 225 covers the top and side surfaces of the semiconductor layer. In this case, the insulating layer 225 overlaps with the channel forming region 231i of the semiconductor layer 231, forming a low resistance region. For example, the insulating layer 225 may be processed using the conductive layer 223 as a mask. 18B, the insulating layer 225 and the conductive layer 223 are formed. An insulating layer 215 is provided to cover the conductive layer 222a and the conductive layer 222b. The conductive layer 222b is connected to the low resistance region 231n. An overlying insulating layer 218 may be provided.

[0451] [Display device 100D] FIG. 19 shows a cross-sectional view of the display device 100D.

[0452] The display device 100D differs from the display device 100C in that it has a colored layer 148a.

[0453] The colored layer 148a has a portion that contacts the upper surface of the pixel electrode 181 of the light receiving device 110, and a portion that contacts the side surface of the partition wall 216.

[0454] The colored layer 148a absorbs stray light generated in the display device 100D, thereby reducing the amount of light emitted from the light-receiving device 11. This reduces the amount of stray light incident on the light receiving device 11. The sensitivity of the sensor using 0 can be increased.

[0455] The display device 100D does not have the substrate 151 and the substrate 152, but has the substrate 153 and the substrate 15 4, adhesive layer 155 and insulating layer 212 are included, which is different from display device 100C.

[0456] The substrate 153 and the insulating layer 212 are bonded together by an adhesive layer 155. The protective layer 195 is bonded to the substrate 190 by an adhesive layer 142 .

[0457] The display device 100D includes an insulating layer 212, a transistor 202, and a transistor 304 formed on a fabrication substrate. a transistor 209, a transistor 210, a light receiving device 110, and a light emitting device 190, etc. The substrate 153 and the substrate 154 are fabricated by transposing the substrate 153 onto the substrate 154. , and each of them preferably have flexibility. This allows the display device 100D to have flexibility. It can be increased.

[0458] The insulating layer 212 can be used for the insulating layer 211, the insulating layer 213, and the insulating layer 215. An inorganic insulating film such as

[0459] The display device 100C does not have a lens 149, and the display device 100D does not have a lens 149. 1 shows an example in which a lens 149 is provided. The lens 149 can be provided as appropriate depending on the application of the sensor. This can be done.

[0460] As described above, the display device of the present embodiment has a light-emitting device that emits visible light and infrared light in the display portion. a light emitting device that emits visible light, and a light detecting device that detects at least a portion of the visible light and the infrared light. The display unit has a function of displaying an image and a function of detecting light. This allows for a sensor to be provided outside the display unit or the display device. In comparison, the electronic device can be made smaller and lighter. By combining it with an external sensor, it is possible to realize electronic devices with even more functions. Cut.

[0461] The light-receiving device has at least one layer other than the active layer that is shared with the light-emitting device (EL device). Furthermore, the light receiving device can be configured such that all layers other than the active layer are For example, it can be used in the manufacture of a light-emitting device. By simply adding the process of forming an active layer to the manufacturing process, it is possible to simultaneously fabricate a light-emitting device and a light-receiving device. The light-receiving device and the light-emitting device can be formed on a single substrate together with the pixel electrodes. The light-receiving electrode and the conductive electrode can be formed using the same material and in the same process. a circuit electrically connected to the device; and a circuit electrically connected to the light emitting device. By using the same material and manufacturing process, the manufacturing process of the display device can be simplified. Thus, it is possible to create a highly convenient display device with a built-in light-receiving device without using complicated processes. It can be manufactured.

[0462] This embodiment mode can be combined with other embodiment modes as appropriate.

[0463] (Embodiment 3) In this embodiment, materials that can be used for the light-emitting device of one embodiment of the present invention will be described. explain.

[0464] <Electrode> The materials for forming the pair of electrodes of the light-emitting device include metals, alloys, electrically conductive compounds, and In-Sn oxide (IT) and mixtures thereof can be used as appropriate. O), In-Si-Sn oxide (also called ITSO), In-Zn oxide, In -W-Zn oxide. Other examples include aluminum (Al), titanium (Ti), chromium (Cr) Cobalt (Cr), Manganese (Mn), Iron (Fe), Cobalt (Co), Nickel (Ni), Copper (Cu), Gallium (Ga), Zinc (Zn), Indium (In), Tin (Sn), Molybdenum (Mo) Butan (Mo), Tantalum (Ta), Tungsten (W), Palladium (Pd), Gold (A u), platinum (Pt), silver (Ag), yttrium (Y), neodymium (Nd), and other metals, Also, alloys containing these in appropriate combinations can be used. Elements belonging to Group 1 or 2 of the periodic table (e.g., lithium (Li), cesium ( Cs), calcium (Ca), strontium (Sr), europium (Eu), Rare earth metals such as terbium (Yb) and alloys containing these in appropriate combinations, graphene etc. can be used.

[0465] When a light-emitting device having a microcavity structure is fabricated, the reflective electrode and the semi-transparent electrode are Therefore, a single layer of a desired conductive material is used. Alternatively, the electrodes can be formed by laminating layers. The electrodes can be fabricated by sputtering or vacuum deposition. can be used.

[0466] <Hole injection layer and hole transport layer> The hole injection layer is a layer that injects holes from the anode to the light-emitting unit, and is made of a material with high hole injection properties. It is a layer containing

[0467] Materials with high hole injection properties include molybdenum oxide, vanadium oxide, and ruthenium oxide. transition metal oxides such as tungsten oxide and manganese oxide, phthalocyanine (abbreviation: Phthalocyanine compounds such as H2Pc and copper phthalocyanine (abbreviated as CuPc) are used. You can be there.

[0468] As a material with high hole injection properties, 4,4',4''-tris(N,N-diphenylamino) ) triphenylamine (abbreviation: TDATA), 4,4',4''-tris[N-(3-methylphenyl) (N-phenylamino)triphenylamine (abbreviation: MTDATA), 4 ,4'-Bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl DPAB, 4,4'-bis(N-{4-[N'-(3-methylphenyl)- N'-phenylamino]phenyl}-N-phenylamino)biphenyl (abbreviated as DNTP D), 1,3,5-tris[N-(4-diphenylaminophenyl)-N-phenylamino] 3-[N-(9-phenylcarbazol-3-yl)benzene (abbreviation: DPA3B) )-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA1), 3, 6-Bis[N-(9-phenylcarbazol-3-yl)-N-phenylamino]-9- Phenylcarbazole (abbreviation: PCzPCA2), 3-[N-(1-naphthyl)-N-( 9-phenylcarbazol-3-yl)amino]-9-phenylcarbazole (abbreviation: P Aromatic amine compounds such as CzPCN1) can be used.

[0469] Materials with high hole injection properties include poly(N-vinylcarbazole) (abbreviated as PVK), poly(N-vinylcarbazole) and poly(vinylcarbazole). Poly(4-vinyltriphenylamine) (abbreviation: PVTPA), poly[N-(4-{N'- [4-(4-diphenylamino)phenyl]phenyl-N'-phenylamino}phenyl ) methacrylamide] (abbreviation: PTPDMA), poly[N,N'-bis(4-butylphenyl ether)] N,N'-bis(phenyl)benzidine (abbreviation: Poly-TPD) Alternatively, poly(3,4-ethylenedioxythiophene) / poly(styrene PEDOT / PSS), polyaniline / poly(styrene sulfonic acid) It is also possible to use a polymer compound to which an acid such as (PAni / PSS) has been added.

[0470] Materials with high hole injection properties include hole transport materials and acceptor materials (electron acceptor materials). In this case, a composite material containing an acceptor material can be used. Electrons are extracted from the conductive material, generating holes in the hole injection layer, which are then transported to the light-emitting layer via the hole transport layer. The hole injection layer contains a hole transport material and an acceptor material. Alternatively, the layer may be formed of a single layer of a composite material containing a hole transporting material and an acceptor material. Each of these layers may be formed by laminating different layers.

[0471] The hole transport layer is a layer that transports holes injected from the anode by the hole injection layer to the light emitting layer. The hole transport layer is a layer containing a hole transport material. In particular, a material having a HOMO level that is the same as or close to the HOMO level of the hole injection layer is used. It is preferable.

[0472] Acceptor materials used in the hole injection layer include those of Groups 4 to 8 of the periodic table. Specifically, molybdenum oxide, vanadium oxide, tungsten oxide, manganese oxide, niobium oxide, tantalum oxide, chromium oxide, tungsten oxide, manganese oxide Among them, molybdenum oxide is particularly stable in the atmosphere and has low hygroscopicity. Other examples include quinodimethane derivatives, chloranil derivatives, and hexyl Organic acceptors such as sazatriphenylene derivatives can be used. (Halogens and cyano groups) include 7,7,8,8-tetracyano-2, 3,5,6-tetrafluoroquinodimethane (abbreviation: F4-TCNQ), chloranil, 2, 3,6,7,10,11-Hexacyano-1,4,5,8,9,12-hexaazatrif Phenylene (abbreviation: HAT-CN), 1,3,4,5,7,8-hexafluorotetraphenyl Nonaphthoquinodimethane (abbreviation: F6-TCNNQ) and the like. Compounds such as AT-CN in which an electron-withdrawing group is bonded to a condensed aromatic ring containing multiple heteroatoms is thermally stable and is preferred. Also, electron-withdrawing groups (especially halogen groups such as fluoro groups) [3] Radialene derivatives having a cyano group or a cyclohexyl group are preferred because of their high electron-accepting properties. Specifically, α,α',α''-1,2,3-cyclopropanetriylidenetris[4- cyano-2,3,5,6-tetrafluorobenzeneacetonitrile], α,α',α'' -1,2,3-cyclopropanetriylidenetris[2,6-dichloro-3,5-difluoro 4-(trifluoromethyl)benzeneacetonitrile], α,α',α''-1, 2,3-Cyclopropanetriylidenetris[2,3,4,5,6-pentafluorobenzoate] diacetonitrile] and the like.

[0473] The hole transporting material used in the hole injection layer and the hole transport layer is 10 -6 cm 2 / Vs or more It is preferable that the material has a hole mobility of 1000 or more. If desired, other materials may also be used.

[0474] As the hole transport material, π-electron-rich heteroaromatic compounds (e.g., carbazole derivatives, Thiophene derivatives, furan derivatives, etc.) and aromatic amines (compounds with an aromatic amine skeleton) Materials with high hole transport properties such as ZnO, ZnS, and ZnO are preferred.

[0475] Carbazole derivatives (compounds with a carbazole skeleton) include bicarbazole derivatives (e.g., 3,3'-bicarbazole derivatives), aromatic amines having a carbazolyl group etc.

[0476] Specific examples of bicarbazole derivatives (for example, 3,3'-bicarbazole derivatives) include: is 3,3'-bis(9-phenyl-9H-carbazole) (abbreviation: PCCP), 9,9 '-Bis(1,1'-biphenyl-4-yl)-3,3'-bi-9H-carbazole, 9 ,9'-Bis(1,1'-biphenyl-3-yl)-3,3'-bi-9H-carbazole , 9-(1,1'-biphenyl-3-yl)-9'-(1,1'-biphenyl-4-yl) )-9H,9'H-3,3'-bicarbazole (abbreviation: mBPCCBP), 9-(2-naphthalene butyl)-9'-phenyl-9H,9'H-3,3'-bicarbazole (abbreviation: βNCC P) and others.

[0477] Specific examples of aromatic amines having a carbazolyl group include 4-phenyl-4'-(9 -phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBA1B P), N-(4-biphenyl)-N-(9,9-dimethyl-9H-fluoren-2-yl )-9-phenyl-9H-carbazol-3-amine (abbreviation: PCBiF), N-(1, 1'-biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazole-3- [(phenyl)-9,9-dimethyl-9H-fluoren-2-amine (abbreviation: PCBB iF), 4,4'-diphenyl-4''-(9-phenyl-9H-carbazole-3-yl) 1-naphthyl)triphenylamine (abbreviation: PCBBi1BP), 4-(1-naphthyl)-4'-( 9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBAN) B), 4,4'-di(1-naphthyl)-4''-(9-phenyl-9H-carbazole- 3-yl)triphenylamine (abbreviation: PCBNBB), 4-phenyldiphenyl-(9 -phenyl-9H-carbazol-3-yl)amine (abbreviation: PCA1BP), N,N' -bis(9-phenylcarbazol-3-yl)-N,N'-diphenylbenzene-1, 3-Diamine (abbreviation: PCA2B), N,N',N''-triphenyl-N,N',N' '-Tris(9-phenylcarbazol-3-yl)benzene-1,3,5-triamine (abbreviation: PCA3B), 9,9-dimethyl-N-phenyl-N-[4-(9-phenyl- 9H-carbazol-3-yl)phenyl]fluoren-2-amine (abbreviation: PCBAF ), N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl] [Il]spiro-9,9'-bifluoren-2-amine (abbreviation: PCBASF), PCzPC A1, PCzPCA2, PCzPCN1, 3-[N-(4-diphenylaminophenyl) -N-phenylamino]-9-phenylcarbazole (abbreviation: PCzDPA1), 3,6 -Bis[N-(4-diphenylaminophenyl)-N-phenylamino]-9-phenyl Carbazole (abbreviation: PCzDPA2), 3,6-bis[N-(4-diphenylamino) [phenyl]-N-(1-naphthyl)amino]-9-phenylcarbazole (abbreviation: PCzT PN2), 2-[N-(9-phenylcarbazol-3-yl)-N-phenylamino] Spiro-9,9'-bifluorene (abbreviation: PCASF), N-[4-(9H-carbazol- [N-(4-phenyl)phenyl]-N-(4-phenyl)phenylaniline (abbreviation: YGA1B P), N,N'-bis[4-(carbazol-9-yl)phenyl]-N,N'-diphenyl Nyl-9,9-dimethylfluorene-2,7-diamine (abbreviation: YGA2F), 4,4' ,4''-tris(carbazol-9-yl)triphenylamine (abbreviation: TCTA) Examples include:

[0478] In addition to the above, the carbazole derivatives include 3-[4-(9-phenanthryl)-phenanthroline]- 3-[4-(1-naphthyl)]-9-phenyl-9H-carbazole (abbreviation: PCPPn), 1,3-Phenyl)-phenyl]-9-phenyl-9H-carbazole (abbreviation: PCPN) -bis(N-carbazolyl)benzene (abbreviation: mCP), 4,4'-di(N-carbazolyl) Biphenyl (abbreviation: CBP), 3,6-bis(3,5-diphenylphenyl)-9- Phenylcarbazole (abbreviation: CzTP), 1,3,5-tris[4-(N-carbazolyl) 9-[4-(10-phenyl-9-anthracene]phenyl)benzene (abbreviation: TCPB), (racenyl)phenyl]-9H-carbazole (abbreviation: CzPA), and the like.

[0479] Thiophene derivatives (compounds with a thiophene skeleton) and furan derivatives (compounds with a furan skeleton) Specifically, the compound (which is a compound that yl)tri(dibenzothiophene) (abbreviation: DBT3P-II), 2,8-diphenyl- 4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]dibenzothiophene DBTFLP-III, 4-[4-(9-phenyl-9H-fluorene-9 -yl)phenyl]-6-phenyldibenzothiophene (abbreviation: DBTFLP-IV) Which compound has a thiophene skeleton, 4,4',4''-(benzene-1,3,5-trimethylsilyl) 4-[3-[3-(9-furanyl)tri(dibenzofuran)(abbreviation: DBF3P-II) (phenyl-9H-fluoren-9-yl)phenyl]phenyl}dibenzofuran (abbreviation: m mDBFFLBi-II) and others.

[0480] Specific examples of aromatic amines include 4,4'-bis[N-(1-naphthyl)-N-phenyl]amine and 4,4'-bis[N-(1-naphthyl)-N-phenyl]amine. N,N'-bis(3-methylamino)biphenyl (abbreviation: NPB or α-NPD) (1,1'-biphenyl)-N,N'-diphenyl-[1,1'-biphenyl]-4,4'-diamine (abbreviation: TPD), 4,4'-bis[N-(spiro-9,9'-bifluoren-2-yl )-N-phenylamino]biphenyl (abbreviation: BSPB), 4-phenyl-4'-(9- (phenylfluoren-9-yl)triphenylamine (abbreviation: BPAFLP), 4-phenyl mBP AFLP), N-(9,9-dimethyl-9H-fluoren-2-yl)-N-{9,9- Dimethyl-2-[N'-phenyl-N'-(9,9-dimethyl-9H-fluorene-2- yl)amino]-9H-fluoren-7-yl}phenylamine (abbreviation: DFLADFL ), N-(9,9-dimethyl-2-diphenylamino-9H-fluoren-7-yl)di Phenylamine (abbreviation: DPNF), 2-[N-(4-diphenylaminophenyl)-N -phenylamino]spiro-9,9'-bifluorene (abbreviation: DPASF), 2,7-bi Spiro-9,9'-[N-(4-diphenylaminophenyl)-N-phenylamino]spiro Bifluorene (abbreviation: DPA2SF), 4,4',4''-tris[N-(1-naphthyl )-N-phenylamino]triphenylamine (abbreviation: 1-TNATA), TDATA, m-MTDATA, N,N'-di(p-tolyl)-N,N'-diphenyl-p-phenylene Examples include diphenylamine (abbreviation: DTDPPA), DPAB, DNTPD, and DPA3B. .

[0481] Hole transport materials include PVK, PVTPA, PTPDMA, and Poly-TPD. Polymer compounds can also be used.

[0482] The hole transport material is not limited to the above, and may be one or a combination of various known materials. The compound can be used in combination in the hole injection layer and the hole transport layer.

[0483] <Light-emitting layer> The light-emitting layer is a layer containing a light-emitting substance. The light-emitting layer may contain one or more light-emitting substances. The luminescent materials are blue, purple, blue-purple, green, yellow-green, yellow, orange, and red. In addition, as the light-emitting material, a material that emits near-infrared light is used. can also be used.

[0484] The light-emitting layer contains one or more organic compounds (host materials) in addition to the light-emitting material (guest material). The one or more organic compounds may include the following: One or both of a hole transporting material and an electron transporting material described in the embodiment mode may be used. In addition, a bipolar material may be used as one or more organic compounds. stomach.

[0485] The light-emitting material that can be used in the light-emitting layer is not particularly limited, and can be any light-emitting material having a singlet excitation energy of 1000 .mu.m or more. Luminescent materials that emit light in the visible or near-infrared region, or triplet excitation energy It is possible to use a luminescent material that converts the light emitted from the fluorescent material into light in the visible or near infrared region.

[0486] Luminescent materials that convert singlet excitation energy into light include fluorescent materials. Examples thereof include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, and the like. Olene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives , dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives Pyrene derivatives are particularly well known for their The photon yield is high, which is preferable. Specific examples of pyrene derivatives include N,N'-bis(3- methylphenyl)-N,N'-bis[3-(9-phenyl-9H-fluoren-9-yl )phenyl]pyrene-1,6-diamine (abbreviation: 1,6mMemFLPAPrn), N, N'-diphenyl-N,N'-bis[4-(9-phenyl-9H-fluoren-9-yl] )phenyl]pyrene-1,6-diamine (abbreviation: 1,6FLPAPrn), N,N'-biphenyl N,N'-diphenylpyrene-1,6-diamine (abbreviation) Name: 1,6FrAPrn), N,N'-bis(dibenzothiophen-2-yl)-N,N '-Diphenylpyrene-1,6-diamine (abbreviation: 1,6ThAPrn), N,N'-( Pyrene-1,6-diyl)bis[(N-phenylbenzo[b]naphtho[1,2-d]fura N,N'-(pyrene-1,6-diamine) (abbreviation: 1,6BnfAPrn), yl)bis[(N-phenylbenzo[b]naphtho[1,2-d]furan)-8-amine] (abbreviation: 1,6BnfAPrn-02), N,N'-(pyren-1,6-diyl)bis[ (6,N-diphenylbenzo[b]naphtho[1,2-d]furan)-8-amine] (abbreviation :1,6BnfAPrn-03).

[0487] In addition, 5,6-bis[4-(10-phenyl-9-anthryl)phenyl]-2, 2'-Bipyridine (abbreviation: PAP2BPy), 5,6-bis[4'-(10-phenyl- 9-anthryl)biphenyl-4-yl]-2,2'-bipyridine (abbreviation: PAPP2B Py), N,N'-bis[4-(9H-carbazol-9-yl)phenyl]-N,N' -Diphenylstilbene-4,4'-diamine (abbreviation: YGA2S), 4-(9H-cal (bazol-9-yl)-4'-(10-phenyl-9-anthryl)triphenylamine (Abbreviation: YGAPA), 4-(9H-carbazol-9-yl)-4'-(9,10-di N,9-diphenyl-2-anthryl)triphenylamine (abbreviation: 2YGAPPA) Phenyl-N-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazo PCAPA, 4-(10-phenyl-9-anthryl)-4 '-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PC BAPA), 4-[4-(10-phenyl-9-anthryl)phenyl]-4'-(9- Phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBAPBA ), perylene, 2,5,8,11-tetra(tert-butyl)perylene (abbreviation: TBP ), N,N''-(2-tert-butylanthracene-9,10-diyldi-4,1- phenylene)bis[N,N',N'-triphenyl-1,4-phenylenediamine](abbreviation Name: DPABPA), N,9-diphenyl-N-[4-(9,10-diphenyl-2-a N-(2-phenyl-9H-carbazol-3-amine (abbreviation: 2PCAPPA), -[4-(9,10-diphenyl-2-anthryl)phenyl]-N,N',N'-tri Phenyl-1,4-phenylenediamine (abbreviation: 2DPAPPA) and the like can be used. do.

[0488] Examples of luminescent materials that convert triplet excitation energy into luminescence include phosphorescent materials (phosphors and thermally activated delayed fluorescence (TDF). Examples include TADF (Triaxially Associated Delayed Fluorescence) materials.

[0489] Examples of phosphorescent materials include those with a 4H-triazole skeleton, a 1H-triazole skeleton, and an imidazoline skeleton. Organometallic complexes having a zole skeleton, a pyrimidine skeleton, a pyrazine skeleton, or a pyridine skeleton (especially iridium complexes), and the use of phenylpyridine derivatives with electron-withdrawing groups as ligands. Examples include organic metal complexes (particularly iridium complexes), platinum complexes, and rare earth metal complexes.

[0490] It has a blue or green color and the peak wavelength of the emission spectrum is between 450 nm and 570 nm. Some phosphorescent materials include the following:

[0491] For example, tris{2-[5-(2-methylphenyl)-4-(2,6-dimethylphenyl )-4H-1,2,4-triazol-3-yl-κN 2 ]phenyl-κC}iridium (III) (abbreviation: [Ir(mpptz-dmp)3]), tris(5-methyl-3,4 -diphenyl-4H-1,2,4-triazolato)iridium(III) (abbreviation: [Ir (Mptz)3]), tris[4-(3-biphenyl)-5-isopropyl-3-phenyl [Ir(iPrp)] tz-3b)3]), tris[3-(5-biphenyl)-5-isopropyl-4-phenyl [Ir(iPr5 btz)3]), organometallic complexes with a 4H-triazole skeleton, such as tris[3- Methyl-1-(2-methylphenyl)-5-phenyl-1H-1,2,4-triazolato ]iridium(III) (abbreviation: [Ir(Mptz1-mp)3]), tris(1-methyl Iridium(II) I) (abbreviation: [Ir(Prtz1-Me)3]) Organometallic complexes containing fac-tris[1-(2,6-diisopropylphenyl)-2-phenyl]propanol [phenyl-1H-imidazole]iridium(III) (abbreviation: [Ir(iPrpmi)3 ]), tris[3-(2,6-dimethylphenyl)-7-methylimidazo[1,2-f] [Ir(dmpimpt-Me)3 organometallic complexes with imidazole skeletons, such as bis[2-(4',6'-difluoromethyl] (O-phenyl)pyridinato-N,C 2’ ]iridium(III) tetrakis(1-pyrazoline) aryl)borate (abbreviation: FIr6), bis[2-(4',6'-difluorophenyl)pi Lysinato-N,C 2’ ] Iridium(III) picolinate (abbreviation: FIrpic), bis{2-[3',5'-bis(trifluoromethyl)phenyl]pyridinato-N,C 2’ }Iridium(III) picolinate (abbreviation: [Ir(CF3ppy)2(pic)]) , bis[2-(4',6'-difluorophenyl)pyridinato-N,C 2’ ]iridium (III) Acetylacetonate (abbreviation: FIr(acac)) Examples of suitable organometallic complexes include those having phenylpyridine derivatives as ligands.

[0492] It is green or yellow and the peak wavelength of the emission spectrum is between 495 nm and 590 nm. Some phosphorescent materials include the following:

[0493] For example, tris(4-methyl-6-phenylpyrimidinato)iridium(III) (abbreviation :[Ir(mppm)3]), tris(4-t-butyl-6-phenylpyrimidinato)i Lithium(III) (abbreviation: [Ir(tBuppm)3]), (acetylacetonato)bis(trimethylsilyl) Bis(6-methyl-4-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(m ppm)2(acac)]), (acetylacetonato)bis(6-tert-butyl-4 -phenylpyrimidinato)iridium(III) (abbreviation: [Ir(tBuppm)2(a cac)]), (acetylacetonato)bis[6-(2-norbornyl)-4-phenyl [Pyrimidinato]iridium(III) (abbreviation: [Ir(nbppm)2(acac)]) , (acetylacetonato)bis[5-methyl-6-(2-methylphenyl)-4-phenyl [Ir(mpmppm)2(acac) ]), (acetylacetonato)bis{4,6-dimethyl-2-[6-(2,6-dimethyl (phenyl)-4-pyrimidinyl-κN 3 ]phenyl-κC}iridium(III) (abbreviation :[Ir(dmppm-dmp)2(acac)]), (acetylacetonato)bis(4 ,6-diphenylpyrimidinato)iridium(III) (abbreviation: [Ir(dppm)2( organometallic iridium complexes with pyrimidine skeletons, such as (acetyl acac)] cetonato)bis(3,5-dimethyl-2-phenylpyrazinato)iridium(III)( Abbreviation: [Ir(mppr-Me)2(acac)]), (acetylacetonato)bis(5 -isopropyl-3-methyl-2-phenylpyrazinato)iridium(III) (abbreviation: Organometallic pyrazine skeletons such as [Ir(mppr-iPr)2(acac)] Iridium complex, tris(2-phenylpyridinato-N,C 2’ ) Iridium(III) (abbreviation: [Ir(ppy)3]), bis(2-phenylpyridinato-N,C 2’ ) Iriji Ir(III) acetylacetonate (abbreviation: [Ir(ppy)2(acac)]), (benzo[h]quinolinato)iridium(III) acetylacetonate (abbreviation: [I r(bzq)2(acac)]), tris(benzo[h]quinolinato)iridium(II I) (abbreviation: [Ir(bzq)3]), tris(2-phenylquinolinato-N,C 2’ ) Iridium(III) (abbreviation: [Ir(pq)3]), bis(2-phenylquinolinato- N,C 2’ ) Iridium(III) acetylacetonate (abbreviation: [Ir(pq)2(a cac)]), [2-(4-phenyl-2-pyridinyl-κN)phenyl-κC]bis[ 2-(2-pyridinyl-κN)phenyl-κC]iridium(III) (abbreviation: [Ir( ppy)2(4dppy)]), bis[2-(2-pyridinyl-κN)phenyl-κC] [2-(4-methyl-5-phenyl-2-pyridinyl-κN)phenyl-κC] Organometallic iridium complexes with pyridine skeletons, bis(2,4-diphenyl-1,3-o Xazolato-N,C 2’ ) Iridium(III) acetylacetonate (abbreviation: [Ir( dpo)2(acac)]), bis{2-[4'-(perfluorophenyl)phenyl] Pyridinato-N,C 2’}Iridium(III) acetylacetonate (abbreviation: [Ir( p-PF-ph)2(acac)]), bis(2-phenylbenzothiazolato-N,C 2 ’ ) Iridium(III) acetylacetonate (abbreviation: [Ir(bt)2(acac) ]), as well as organometallic complexes such as tris(acetylacetonato)(monophenanthroline) Rare earth metals such as terbium(III) (abbreviated as [Tb(acac)3(Phen)]) Examples include complexes of the aryl group.

[0494] Yellow or red, with a peak wavelength of 570 nm or more and 750 nm or less in the emission spectrum. Some phosphorescent materials include the following:

[0495] For example, (diisobutyrylmethanato)bis[4,6-bis(3-methylphenyl)pyrimidinyl] dinato]iridium(III) (abbreviation: [Ir(5mdppm)2(dibm)]), bis[4,6-bis(3-methylphenyl)pyrimidinato](dipivaloylmethanato)yl Ir(5mdppm)2(dpm)], bis[4,6-di (Naphthalen-1-yl)pyrimidinato](dipivaloylmethanato)iridium(III) ) (abbreviation: [Ir(d1npm)2(dpm)]), tris(4-t-butyl-6-phenyl) Nylpyrimidinato)iridium(III) (abbreviation: [Ir(tBuppm)3]) A novel organometallic complex with a pyrimidine skeleton, (acetylacetonato)bis(2,3,5-trimethylsilyl) Triphenylpyrazinate)iridium(III) (abbreviation: [Ir(tppr)2(acac )]), bis(2,3,5-triphenylpyrazinato)(dipivaloylmethanato)iridine Ir(tppr)2(dpm) -2-[3-(3,5-dimethylphenyl)-5-phenyl-2-pyrazinyl-κN]fu phenyl-κC}(2,6-dimethyl-3,5-heptanedionato-κ 2 O,O') Iriji Ir(III) (abbreviation: [Ir(dmdppr-P)2(dibm)]), bis{4,6 -dimethyl-2-[5-(4-cyano-2,6-dimethylphenyl)-3-(3,5-di methylphenyl)-2-pyrazinyl-κN]phenyl-κC}(2,2,6,6-tetra ... Methyl-3,5-heptanedionate-κ 2 O,O')iridium(III) (abbreviation: [I r(dmdppr-dmCP)2(dpm)]), (acetylacetonato)bis[2-methyl Thiyl-3-phenylquinoxalinato-N,C 2’ ]Iridium(III) (abbreviation: [Ir (mpq)2(acac)]), (acetylacetonato)bis(2,3-diphenylquinoline Xalinato-N,C 2’ ) Iridium(III) (abbreviation: [Ir(dpq)2(acac )]), (acetylacetonato)bis[2,3-bis(4-fluorophenyl)quinoxa [Ir(Fdpq)2(acac)]), bis{ 4,6-dimethyl-2-[5-(5-cyano-2-methylphenyl)-3-(3,5-di methylphenyl)-2-pyrazinyl-κN]phenyl-κC}(2,2,6,6-tetra ... Methyl-3,5-heptanedionate-κ 2 O,O')iridium(III) (abbreviation: [I Organometallic compounds with pyrazine skeletons such as r(dmdppr-m5CP)2(dpm)] complexes and tris(1-phenylisoquinolinato-N,C 2’ ) Iridium (III) (abbreviation Name: [Ir(piq)3]), bis(1-phenylisoquinolinato-N,C 2’ ) Iriji Ir(III) acetylacetonate (abbreviation: [Ir(piq)2(acac)]), bis[4,6-dimethyl-2-(2-quinolinyl-κN)phenyl-κC](2,4-pentaerythroyl) Tandione-κ 2 O,O') Iridium(III) and other organic compounds with a pyridine skeleton Metal complex, 2,3,7,8,12,13,17,18-octaethyl-21H,23H- Platinum complexes such as porphyrin platinum(II) (abbreviation: [PtOEP]), tris(1,3 -diphenyl-1,3-propanedionato)(monophenanthroline)europium(I II) (abbreviation: [Eu(DBM)3(Phen)]), tris[1-(2-thenoyl)- 3,3,3-Trifluoroacetonato](monophenanthroline)europium(III) ) (abbreviation: [Eu(TTA)3(Phen)])

[0496] The organic compounds used in the light-emitting layer (host material, assist material, etc.) are Select one or more materials that have an energy gap larger than the energy gap. It can be used as such.

[0497] When the luminescent material used in the luminescent layer is a fluorescent material, the organic compound used in combination with the luminescent material As a substance, the energy level of the singlet excited state is large, and the energy level of the triplet excited state is large. It is preferable to use organic compounds with low molecular weight.

[0498] Although some of the above examples overlap, preferred combinations with luminescent materials (fluorescent materials, phosphorescent materials) From this viewpoint, specific examples of organic compounds are shown below.

[0499] When the luminescent material is a fluorescent material, an organic compound that can be used in combination with the luminescent material Examples include anthracene derivatives, tetracene derivatives, phenanthrene derivatives, and pyrene derivatives. condensed polycyclic aromatic compounds such as chrysene derivatives, dibenzo[g,p]chrysene derivatives, etc. It can be obtained.

[0500] Specific examples of organic compounds (host materials) used in combination with fluorescent materials include 9-phenyl 3-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole ( Abbreviation: PCzPA), 3,6-diphenyl-9-[4-(10-phenyl-9-anthracene Diphenyl)phenyl]-9H-carbazole (abbreviation: DPCzPA), PCPN, 9,10-diphenyl Phenylanthracene (abbreviation: DPAnth), N,N-diphenyl-9-[4-(10 -phenyl-9-anthryl)phenyl]-9H-carbazol-3-amine (abbreviation: C zA1PA), 4-(10-phenyl-9-anthryl)triphenylamine (abbreviation: D PhPA), 4-(9H-carbazol-9-yl)-4'-(10-phenyl-9-a N,9-diphenyl-N-[4- (10-phenyl-9-anthryl)phenyl]-9H-carbazol-3-amine (abbreviation Name: PCAPA), N,9-diphenyl-N-{4-[4-(10-phenyl-9-an tolyl)phenyl]phenyl}-9H-carbazol-3-amine (abbreviation: PCAPBA ), N-(9,10-diphenyl-2-anthryl)-N,9-diphenyl-9H-chlor 2PCAPA, 6,12-dimethoxy-5,11-diphenyl- Phenilchrysen, N,N,N',N',N'',N'',N''',N'''-Octav Phenyldibenzo[g,p]chrysene-2,7,10,15-tetraamine (abbreviation: DBC 1), CzPA, 7-[4-(10-phenyl-9-anthryl)phenyl]-7H-di Benzo[c,g]carbazole (abbreviation: cgDBCzPA), 6-[3-(9,10-di (phenyl-2-anthryl)phenyl]-benzo[b]naphtho[1,2-d]furan (abbreviation Name: 2mBnfPPA), 9-phenyl-10-{4-(9-phenyl-9H-fluorene 9,1-phenyl-4'-yl)-biphenyl-4'-yl}anthracene (abbreviation: FLPPA), 0-Bis(3,5-diphenylphenyl)anthracene (abbreviation: DPPA), 9,10- Di(2-naphthyl)anthracene (abbreviation: DNA), 2-tert-butyl-9,10- Di(2-naphthyl)anthracene (abbreviated as t-BuDNA), 9,9'-bianthryl ( abbreviation: BANT), 9,9'-(stilbene-3,3'-diyl)diphenanthrene (abbreviation DPNS), 9,9'-(stilbene-4,4'-diyl)diphenanthrene (abbreviation :DPNS2), 1,3,5-tri(1-pyrenyl)benzene (abbreviation:TPB3), 5, 12-diphenyltetracene, 5,12-bis(biphenyl-2-yl)tetracene, etc. Examples include:

[0501] When the luminescent substance is a phosphorescent material, the organic compound used in combination with the luminescent substance is The triplet excitation energy (energy difference between the ground state and the triplet excited state) of the optical substance is three times higher than the An organic compound with a large doublet excitation energy may be selected.

[0502] A plurality of organic compounds (e.g., a first host material and a second host material) are mixed together to form an exciplex. When using a resist material (or assist material, etc.) in combination with a light-emitting substance, It is preferable to use a mixture of a plurality of organic compounds with a phosphorescent material (particularly an organometallic complex).

[0503] By using this structure, the energy transfer from the exciplex to the luminescent material, Ex Using TET (Exciplex-Triplet Energy Transfer) It is possible to efficiently obtain light emission with high excitation power. A compound that easily forms an electron-transporting complex and easily accepts holes (hole transport material) is preferable. It is particularly preferable to combine it with a compound that readily accepts electrons (electron transporting material). Specific examples of the hole transporting material and the electron transporting material are the materials shown in this embodiment. This configuration allows the light-emitting device to simultaneously achieve high efficiency, low voltage, and long life. This can be achieved.

[0504] Organic compounds that can be used in combination with a light-emitting substance when the light-emitting substance is a phosphorescent material Examples of the compounds include aromatic amines, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, and the like. Orchid derivatives, zinc and aluminum metal complexes, oxadiazole derivatives, triazoles Derivatives, benzimidazole derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives , pyrimidine derivatives, triazine derivatives, pyridine derivatives, bipyridine derivatives, phenane Examples include thoroline derivatives.

[0505] Among the above, aromatic amines (aromatic amine skeletons) which are organic compounds with high hole transport properties are compounds having the formula (III), carbazole derivatives, dibenzothiophene derivatives (thiophene derivatives) ), and specific examples of dibenzofuran derivatives (furan derivatives) include the above-mentioned hole transporting Specific examples of materials include the same as those mentioned above.

[0506] Specific examples of zinc and aluminum metal complexes, which are organic compounds with high electron transport properties, include: , tris(8-quinolinolato)aluminum(III) (abbreviation: Alq), tris(4- Methyl-8-quinolinolato)aluminum(III) (abbreviation: Almq3), bis(10 -hydroxybenzo[h]quinolinato)beryllium(II) (abbreviation: BeBq2), bis (2-methyl-8-quinolinolato)(4-phenylphenolato)aluminum(III) (abbreviation: BAlq), bis(8-quinolinolato)zinc(II) (abbreviation: Znq), etc. Examples of the metal complex include a metal complex having a quinoline skeleton or a benzoquinoline skeleton.

[0507] In addition, bis[2-(2-benzoxazolyl)phenolato]zinc(II) (abbreviation: Zn PBO), bis[2-(2-benzothiazolyl)phenolato]zinc(II) (abbreviation: Zn Metal complexes with oxazole or thiazole ligands such as BTZ can also be used. can be done.

[0508] Oxadiazole derivatives, triazole derivatives, and benzyl alcohols, which are organic compounds with high electron transport properties, Benzoimidazole derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, phenanthroline Specific examples of the thoroline derivatives include 2-(4-biphenylyl)-5-(4-tert-butanoyl)- 1,3-bis[5-(phenyl)-1,3,4-oxadiazole (abbreviation: PBD) (p-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]benzene OXD-7, 9-[4-(5-phenyl-1,3,4-oxadiazole- 2-yl)phenyl]-9H-carbazole (abbreviation: CO11), 3-(4-biphenylyl) (4-tert-butylphenyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazolium (abbreviation: TAZ), 3-(4-tert-butylphenyl)-4-(4-ethylphenyl) p-EtTAZ , 2,2',2''-(1,3,5-benzenetriyl)tris(1-phenyl-1H- benzimidazole) (abbreviation: TPBI), 2-[3-(dibenzothiophen-4-yl )phenyl]-1-phenyl-1H-benzimidazole (abbreviation: mDBTBIm-II ), 4,4'-bis(5-methylbenzoxazol-2-yl)stilbene (abbreviation: B zOs, bathophenanthroline (abbreviated as Bphen), bathocuproine (abbreviated as BCP) ), 2,9-bis(naphthalen-2-yl)-4,7-diphenyl-1,10-phenane thoroline (abbreviation: NBphen), 2-[3-(dibenzothiophen-4-yl)phenyl] 1]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTPDBq-II), 2-[3' -(Dibenzothiophen-4-yl)biphenyl-3-yl]dibenzo[f,h]quinoxazone Sarin (abbreviation: 2mDBTBPDBq-II), 2-[3'-(9H-carbazole-9 -yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviated as 2mCzBP DBq), 2-[4-(3,6-diphenyl-9H-carbazol-9-yl)phenyl ]dibenzo[f,h]quinoxaline (abbreviation: 2CzPDBq-III), 7-[3-(dibenzo[f,h]quinoxaline benzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 7m DBTPDBq-II), and 6-[3-(dibenzothiophen-4-yl)phenyl] Dibenzo[f,h]quinoxaline (abbreviation: 6mDBTPDBq-II) .

[0509] Heterocyclic compounds with diazine skeletons and triazine skeletons, which are organic compounds with high electron transport properties, Specific examples of heterocyclic compounds having a pyridine skeleton include 4,6 -Bis[3-(phenanthrene-9-yl)phenyl]pyrimidine (abbreviation: 4,6mPn P2Pm), 4,6-bis[3-(4-dibenzothienyl)phenyl]pyrimidine (abbreviation :4,6mDBTP2Pm-II), 4,6-bis[3-(9H-carbazole-9-yl)] 2-[4-[3-(N-phenyl)phenyl]pyrimidine (abbreviation: 4,6mCzP2Pm), (phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl} -4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn), 9-[3 -(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl]-9'-phenyl mPCCzPTzn-02, 3,5-trimethyl-2,3'-bi-9H-carbazole (abbreviation: mPCCzPTzn-02), -Bis[3-(9H-carbazol-9-yl)phenyl]pyridine (abbreviation: 35DCz PPy), 1,3,5-tri[3-(3-pyridyl)phenyl]benzene (abbreviation: TmP yPB) and others.

[0510] An organic compound with high electron transport properties is poly(2,5-pyridinediyl) (abbreviated as PPy ), poly[(9,9-dihexylfluorene-2,7-diyl)-co-(pyridine-3 ,5-diyl)] (abbreviation: PF-Py), poly[(9,9-dioctylfluorene-2, 7-diyl)-co-(2,2'-bipyridine-6,6'-diyl)] (abbreviation: PF-B Polymer compounds such as Py can also be used.

[0511] TADF materials are materials that convert triplet excited states into singlet excited states using a small amount of thermal energy. It is possible to convert the electrons into electrons (reverse intersystem crossing) and efficiently emit light (fluorescence) from the singlet excited state. In addition, the conditions for efficiently obtaining thermally activated delayed fluorescence are three The energy difference between the doublet excitation level and the singlet excitation level is 0 eV or more and 0.2 eV or less, preferably The delayed fluorescence in TADF materials is between 0 eV and 0.1 eV. The light is an emission that has a spectrum similar to that of normal fluorescence, but has a significantly longer lifespan. The lifespan of -6 seconds or more, preferably 10 -3 More than a second.

[0512] TADF materials include, for example, fullerenes and their derivatives, and acridines such as proflavine. Derivatives, eosin, etc. Also, magnesium (Mg), zinc (Zn), cadmium Cd, Sn, Pt, In, or Palladium Examples of metal-containing porphyrins include metal-containing porphyrins containing Pd, etc. For example, protoporphyrin-tin fluoride complex (abbreviation: SnF2(Proto IX)) , mesoporphyrin-tin fluoride complex (abbreviated as SnF2(Meso IX)), hematopoietin Hematoxyl tin fluoride complex (abbreviated as SnF2 (Hemato IX)), coproporf Fluorine tetramethyl ester-tin fluoride complex (abbreviation: SnF2(Copro III- 4Me), octaethylporphyrin-tin fluoride complex (abbreviation: SnF2(OEP)) , etioporphyrin-tin fluoride complex (abbreviation: SnF2(Etio I)), octaethene Examples include thylporphyrin-platinum chloride complex (abbreviation: PtCl2OEP).

[0513] In addition, 2-(biphenyl-4-yl)-4,6-bis(12-phenylindolo[ 2,3-a]carbazol-11-yl)-1,3,5-triazine (abbreviation: PIC-T RZ), PCCzPTzn, 2-[4-(10H-phenoxazin-10-yl)phenyl yl]-4,6-diphenyl-1,3,5-triazine (abbreviation: PXZ-TRZ), 3-[ 4-(5-phenyl-5,10-dihydrophenazin-10-yl)phenyl]-4,5 -diphenyl-1,2,4-triazole (abbreviation: PPZ-3TPT), 3-(9,9- Dimethyl-9H-acridin-10-yl)-9H-xanthen-9-one (abbreviation: AC RXTN), bis[4-(9,9-dimethyl-9,10-dihydroacridine)phenyl ] sulfone (abbreviation: DMAC-DPS), 10-phenyl-10H,10'H-spiro[ Acridine-9,9'-anthracene]-10'-one (abbreviation: ACRSA), etc. Heterocyclic compounds having a π-electron rich heteroaromatic ring and a π-electron deficient heteroaromatic ring can be used. In addition, substances in which a π-electron rich heteroaromatic ring and a π-electron deficient heteroaromatic ring are directly bonded are , the donor property of the π-electron rich heteroaromatic ring and the acceptor property of the π-electron deficient heteroaromatic ring are both This is particularly preferred because it increases the intensity of the excitation light and reduces the energy difference between the singlet and triplet excited states. It's nice.

[0514] When using a TADF material, it can also be used in combination with other organic compounds. In particular, it can be combined with the above-mentioned host material, hole transport material, and electron transport material.

[0515] In addition, the above materials can be used to form a light-emitting layer by combining them with low-molecular-weight materials or polymeric materials. In addition, a known method (such as vapor deposition, coating, or printing) can be used for film formation. It can be used as appropriate.

[0516] <Electron transport layer> The electron transport layer is a layer that transports electrons injected from the cathode by the electron injection layer to the light emitting layer. The electron transport layer is a layer containing an electron transporting material. The material is 1 x 10 -6 cm 2 A substance having an electron mobility of 1 / Vs or more is preferred. Any substance other than these can be used as long as it has a higher electron transporting property than a hole transporting property.

[0517] As the electron transporting material, metal complexes having a quinoline skeleton, Metal complexes, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, etc. , oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives conductors, thiazole derivatives, phenanthroline derivatives, quinoline derivatives with quinoline ligands Conductors, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives derivatives, bipyridine derivatives, pyrimidine derivatives, and other nitrogen-containing heteroaromatic compounds. A material having high electron transporting properties, such as a π-electron deficient heteroaromatic compound, can be used.

[0518] As specific examples of the electron transporting material, the materials shown above can be used.

[0519] <Electron injection layer> The electron injection layer is a layer containing a substance with high electron injection properties. (LiF), Cesium Fluoride (CsF), Calcium Fluoride (CaF2), Lithium Oxide Things (LiO x ) or alkaline earth metals, or their compounds. It is also possible to use rare earth metal compounds such as erbium fluoride (ErF3). An electride may also be used in the electron injection layer. For example, a material in which electrons are highly added to a mixed oxide of calcium and aluminum is The above-mentioned substances for forming the electron transport layer can also be used.

[0520] In addition, the electron injection layer may contain a composite material containing an electron transport material and a donor material (electron donor material). Such composite materials are formed by electron donors generating electrons in organic compounds. Therefore, it has excellent electron injection and electron transport properties. It is preferable that the material is excellent in transporting the generated electrons. Specifically, for example, the above-mentioned electron Electron transporting materials (metal complexes, heteroaromatic compounds, etc.) used in the transport layer can be used. The electron donor may be any substance that exhibits electron donating properties to organic compounds. The metals are preferably alkali metals, alkaline earth metals, or rare earth metals, and more preferably lithium, cesium, magnesium, or the like. Examples of the metals include magnesium, calcium, erbium, and ytterbium. Metal oxides and alkaline earth metal oxides are preferred, and lithium oxide, calcium oxide, Examples of the base include barium oxide. In addition, a Lewis base such as magnesium oxide can be used. It is also possible to use organic compounds such as tetrathiafulvalene (TTF). It is also possible.

[0521] <Charge generation layer> The charge generating layer is provided between the two light emitting units. The charge generating layer is provided between the anode and the cathode. When a voltage is applied, electrons are injected into one of the adjacent light-emitting units, and the other light-emitting unit It has the function of injecting holes into the gate.

[0522] The charge generation layer contains a hole transport material and an acceptor material (electron acceptor material). Alternatively, the layer may have a structure containing an electron transporting material and a donor material. By forming the charge generating layer, the increase in driving voltage when an EL layer is laminated can be prevented. It can be suppressed.

[0523] The hole transporting material, the acceptor material, the electron transporting material, and the donor material are The materials mentioned above can be used.

[0524] Note that the light-emitting device according to one embodiment of the present invention can be manufactured by a vacuum process such as evaporation or a spin-on method. Solution processes such as coating and inkjet printing can be used. In this case, sputtering, ion plating, ion beam deposition, molecular beam deposition, Physical vapor deposition (PVD) methods such as vacuum deposition and chemical vapor deposition (CVD) methods can be used. In particular, the functional layers included in the EL layer (hole injection layer, hole transport layer, light-emitting layer, electron transport layer, For the electron injection layer and charge generation layer, deposition methods (vacuum deposition, etc.), coating methods (dip coating, etc.) coating method, die coating method, bar coating method, spin coating method, spray coating method, etc.), printing method (Inkjet method, Screen (Stencil printing) method, Offset (Lithographic printing) method, Flexo (Relief printing) method, gravure method, microcontact method, etc.) can be done.

[0525] The materials of the functional layer and the charge generating layer constituting the light emitting device are not limited to the above-mentioned materials. For example, polymer compounds (oligomers, dendrimers, polymers) can be used as materials for the functional layer. mers, etc.), medium molecular weight compounds (compounds in the intermediate range between low molecular weight and high molecular weight: molecular weight 400 to 400 0), inorganic compounds (quantum dot materials, etc.), etc. may also be used. colloidal quantum dot materials, alloy quantum dot materials, core-shell quantum dot materials , core-type quantum dot materials, etc. can be used.

[0526] This embodiment mode can be combined with other embodiment modes and examples as appropriate.

[0527] (Fourth embodiment) In this embodiment, a display device of one embodiment of the present invention will be described with reference to FIGS.

[0528] A display device according to one embodiment of the present invention includes a first pixel circuit having a light-receiving device and a light-emitting device. and a second pixel circuit having a first pixel circuit and a second pixel circuit. They are arranged in a trix shape.

[0529] FIG. 20A shows an example of a first pixel circuit having a light-receiving device, and FIG. 20B shows an example of a first pixel circuit having a light-emitting device. 1 shows an example of a second pixel circuit having a

[0530] The pixel circuit PIX1 shown in FIG. 20A includes a light receiving device PD, a transistor M1, a transistor The photodiode includes a photodiode M2, a transistor M3, a transistor M4, and a capacitor C1. An example is shown in which a photodiode is used as the device PD.

[0531] The cathode of the light receiving device PD is electrically connected to the wiring V1, and the anode of the light receiving device PD is electrically connected to the wiring V2. The gate of the transistor M1 is electrically connected to either the source or the drain of the transistor M2. The other of the source and drain is electrically connected to one electrode of the capacitor C1. The source or drain of transistor M2 is electrically connected to the gate of transistor M3. The transistor M2 has a gate electrically connected to the wiring RES and a source or drain The other input is electrically connected to the wiring V2. One of the source and drain is electrically connected to the wiring V3, and the other of the source and drain is The gate of the transistor M4 is electrically connected to the wiring S E, and the other of the source or drain is electrically connected to the wiring OUT1.

[0532] A constant potential is supplied to the wiring V1, the wiring V2, and the wiring V3. When D is driven with a reverse bias, a potential lower than the potential of the wire V1 is applied to the wire V2. The transistor M2 is controlled by a signal supplied to the wiring RES. The potential of the node connected to the gate of the transistor M3 is reset to the potential supplied to the wiring V2. The transistor M1 is controlled by a signal supplied to the wiring TX. The function is to control the timing when the potential of the above nodes changes depending on the current flowing through the device PD. The transistor M3 serves as an amplifier transistor that outputs an output according to the potential of the node. The transistor M4 is controlled by a signal supplied to the wiring SE. A selection transistor is used to read out the output according to the potential of the board using an external circuit connected to wiring OUT1. It functions as a register.

[0533] The pixel circuit PIX2 shown in FIG. 20B includes a light-emitting device EL, a transistor M5, a transistor Here, the light emitting device EL is In particular, an example using an organic EL device as the light-emitting device EL is shown. It is preferable to use a vice.

[0534] The transistor M5 has a gate electrically connected to the wiring VG and a source or a drain is electrically connected to the wiring VS, and the other of the source or drain is connected to one electrode of the capacitance C2, and the gate of the transistor M6. One of the drains is electrically connected to the wiring V4, and the other is connected to the anode of the light-emitting device EL, Electrically connected to either the source or the drain of the transistor M7. The gate is electrically connected to the wiring MS, and the other of the source and drain is connected to the wiring OUT2. The cathode of the light-emitting device EL is electrically connected to the wiring V5.

[0535] A constant potential is supplied to the wiring V4 and the wiring V5. The cathode side can be set to a higher potential than the anode side, and the cathode side can be set to a lower potential than the anode side. M5 is controlled by a signal supplied to the wiring VG, and controls the selection state of the pixel circuit PIX2. The transistor M6 also functions as a select transistor for It functions as a driving transistor that controls the current flowing through the light-emitting device EL according to the potential applied to the When the transistor M5 is in a conducting state, the potential supplied to the wiring VS is The potential is supplied to the gate of M6, and the luminance of the light-emitting device EL is controlled according to the potential. The transistor M7 is controlled by a signal supplied to the wiring MS. The potential between M6 and the light emitting device EL is output to the outside via the wiring OUT2. do.

[0536] In the display device of this embodiment, the light emitting device emits light in a pulsed manner, thereby displaying an image. By shortening the driving time of the light emitting device, the power consumption of the display device can be reduced. In particular, organic EL devices have excellent frequency characteristics. The frequency is preferably between 1 kHz and 100 MHz, for example. can be done.

[0537] Here, the pixel circuit PIX1 has a transistor M1, a transistor M2, a transistor M3 and transistor M4, and transistor M5 and transistor M6 of pixel circuit PIX2. The transistor M6 and the transistor M7 each have a semiconductor layer in which a channel is formed. It is preferable to use a transistor using a metal oxide (oxide semiconductor).

[0538] A transistor using metal oxides with a wider band gap and lower carrier density than silicon The transistor can realize an extremely small off-state current. The charge stored in the capacitor connected in series with the transistor is maintained for a long period of time by the current. Therefore, it is possible to maintain the capacitance of the transistor connected in series to the capacitor C1 or the capacitor C2. The transistor M1, the transistor M2, and the transistor M5 are made of oxide semiconductors. It is preferable to use a transistor that has been oxidized. By using a transistor using a compound semiconductor, manufacturing costs can be reduced.

[0539] In addition, the transistors M1 to M7 have silicon as the semiconductor in which the channel is formed. In particular, transistors using single crystal silicon or polycrystalline silicon can also be used. By using highly crystalline silicon such as This is preferable because it allows for faster operation.

[0540] In addition, an oxide semiconductor is used for at least one of the transistors M1 to M7. In addition to using transistors, it is also possible to use silicon-based transistors. good.

[0541] In addition, in FIGS. 20A and 20B, the transistors are assumed to be n-channel transistors. Although shown, a p-channel transistor can also be used.

[0542] The transistors in the pixel circuit PIX1 and the transistors in the pixel circuit PIX2 are the same. It is preferable that they are formed side by side on one substrate. The transistors of the pixel circuit PIX1 and the transistors of the pixel circuit PIX2 are mixed and periodically arranged in one area. It is preferable to have a configuration in which the electrodes are arranged in a row.

[0543] In addition, a transistor and a capacitor are provided at a position overlapping the light receiving device PD or the light emitting device EL. It is preferable to provide one or more layers having one or both of the above. The effective area occupied by the circuit can be reduced, and a high-definition light receiving section or display section can be realized.

[0544] This embodiment mode can be combined with other embodiment modes as appropriate.

[0545] (Embodiment 5) In this embodiment, electronic devices of one embodiment of the present invention will be described with reference to FIGS. 21 to 23. do.

[0546] The electronic devices of this embodiment include the light-emitting device of one embodiment of the present invention. The light-emitting device of one embodiment of the present invention can be applied to the display portion. It is preferable that a light sensor be provided separately from the device. It has the function of emitting both infrared and infrared light, so it not only displays images on the display unit but also functions as a light sensor. It can emit light (visible light and / or infrared light) to be used as a light source for the laser. By combining optical devices and optical sensors, biometric authentication can be performed, or touch (and This allows for improved functionality and convenience of electronic devices. It is possible.

[0547] Alternatively, the electronic device of this embodiment includes the display device of one embodiment of the present invention. The display device of one embodiment of the present invention can be applied to a display portion of the device. The display device has a function of emitting both visible light and infrared light and a function of detecting light, Not only can the image be displayed on the display, but biometric authentication can also be performed, or touch (or even proximity) This will improve the functionality and convenience of electronic devices. can be done.

[0548] Examples of electronic devices include television sets, desktop or notebook PCs, etc. Personal computers, computer monitors, digital signage, pachinko machines, etc. In addition to electronic devices with relatively large screens such as large game consoles, digital cameras, Digital video cameras, digital photo frames, mobile phones, portable game consoles, portable information terminals Examples include audio equipment, sound reproduction devices, etc.

[0549] The electronic device of this embodiment includes sensors (force, displacement, position, velocity, acceleration, angular velocity, rotation speed, Distance, light, liquid, magnetism, temperature, chemicals, sound, time, hardness, electric field, current, voltage, power, radiation (including the ability to measure radiation, flow rate, humidity, gradient, vibration, odor or infrared) It may be possible.

[0550] The electronic device of this embodiment can have various functions. For example, Functions for displaying still images, videos, text images, etc. on the display, touch panel function, calendar - Functions to display date or time, etc., and to run various software (programs) Functions, wireless communication functions, and functions for reading programs or data recorded on recording media etc.

[0551] The electronic device 6500 shown in FIG. 21A is a portable information device that can be used as a smartphone. It is a terminal device.

[0552] The electronic device 6500 includes a housing 6501, a display unit 6502, a power button 6503, and a button 65 04, a speaker 6505, a microphone 6506, a camera 6507, and a light source 6508. The display unit 6502 has a touch panel function.

[0553] The light-emitting device or the display device of one embodiment of the present invention can be applied to the display portion 6502.

[0554] FIG. 21B is a schematic cross-sectional view including the end of the housing 6501 on the microphone 6506 side.

[0555] A light-transmitting protective member 6510 is provided on the display surface side of the housing 6501. A display panel 6511, an optical member 6512, a touch panel 6513, and a protective member 6510 are arranged in a space surrounded by the display panel 6511, the optical member 6512, and a touch panel 6513. The sensor panel 6513, printed circuit board 6517, battery 6518, etc. are arranged. .

[0556] The protective member 6510 includes a display panel 6511, an optical member 6512, and a touch sensor panel. The cable 6513 is fixed by an adhesive layer (not shown).

[0557] In the area outside the display portion 6502, a part of the display panel 6511 is folded back. The FPC6515 is connected to the folded part. C6516 is mounted on the FPC6515. connected to a child.

[0558] The display panel 6511 includes a flexible light-emitting device or a flexible Therefore, it is possible to realize an extremely lightweight electronic device. The display panel 6511 is extremely thin, so it can accommodate a large-capacity battery while keeping the thickness of the electronic device small. Also, a part of the display panel 6511 can be folded back to expose the pixels. By locating the connection part with the FPC6515 on the back side of the part, it is possible to realize electronic devices with narrow bezels. Cut.

[0559] An example of a television device is shown in Figure 22A. The television device 7100 has a housing 7101 The display unit 7000 is built into the housing 7101. This shows a configuration in which the above is supported.

[0560] The light-emitting device or the display device of one embodiment of the present invention can be applied to the display portion 7000.

[0561] The television device 7100 shown in FIG. 22A is operated by an operation switch provided on the housing 7101. Alternatively, it can be performed by a separate remote control device 7111. The television may be provided with a touch sensor, and the television can be operated by touching the display unit 7000 with a finger or the like. The remote control operator 7111 may operate the device 7100. The remote control unit 7111 may have a display unit that displays information output from the The channel and volume can be controlled using the operation keys or touch panel. The image displayed on the display unit 7000 can be manipulated.

[0562] The television device 7100 includes a receiver, a modem, and the like. It is also possible to receive general television broadcasts via wired or wireless connection via a modem. By connecting to a wired communication network, it can be transmitted in one direction (sender to receiver) or two directions. It is also possible to communicate information in two directions (between a sender and a receiver, or between receivers). do.

[0563] FIG. 22B shows an example of a notebook personal computer. The computer 7200 includes a housing 7211, a keyboard 7212, a pointing device 721 3, an external connection port 7214, etc. The display unit 7000 is incorporated in the housing 7211. are.

[0564] The light-emitting device or the display device of one embodiment of the present invention can be applied to the display portion 7000.

[0565] 22C and 22D show an example of digital signage.

[0566] The digital signage 7300 shown in FIG. 22C includes a housing 7301, a display unit 7000, and a screen. It also has an LED lamp, operation keys (power switch, or operation It may have a variety of functions, including a switch, connection terminals, various sensors, a microphone, etc.

[0567] FIG. 22D shows a digital signage 7400 attached to a cylindrical pole 7401. The digital signage 7400 has a display unit 7000 provided along the curved surface of a pillar 7401. do.

[0568] 22C and 22D, the display portion 7000 includes a light-emitting device or a display device according to one embodiment of the present invention. The device can be applied.

[0569] The larger the display unit 7000, the more information can be displayed at once. The wider the part 7000, the more noticeable it is, and for example, the more effective the advertisement. Cut.

[0570] By applying a touch panel to the display unit 7000, images or videos can be displayed on the display unit 7000. It is also preferable because it not only shows route information but also allows users to operate it intuitively. Or when used to provide information such as traffic information, intuitive operation is required. This can improve usability.

[0571] Also, as shown in FIGS. 22C and 22D, a digital signage 7300 or a digital signage The Ineji 7400 is an information terminal device 7311 such as a smartphone owned by the user or It is preferable that the display unit 7411 can be connected to the information terminal 7411 by wireless communication. The advertisement information displayed on 000 is displayed on the screen of the information terminal 7311 or the information terminal 7411. In addition, the information terminal 7311 or the information terminal 7411 can be operated. By doing so, the display on the display unit 7000 can be switched.

[0572] In addition, the digital signage 7300 or the digital signage 7400 is equipped with an information terminal 7 311 or the screen of the information terminal 7411 is used as a control means (controller) to play games. This allows an unspecified number of users to participate in the game at the same time and have fun. It can be done.

[0573] The electronic device shown in FIGS. 23A to 23F includes a housing 9000, a display unit 9001, a speaker 90 03, operation keys 9005 (including power switch or operation switch), connection terminal 900 6. Sensor 9007 (force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, Magnetic, temperature, chemical, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity (including functions to measure degree, tilt, vibration, smell or infrared), microphone 90 08, etc.

[0574] The electronic devices shown in FIGS. 23A to 23F have various functions. Functions for displaying still images, videos, text images, etc. on the display, touch panel function, calendar Functions such as displaying date or time, and processing by various software (programs) functions to control the processing, wireless communication functions, and programs or data recorded on the recording medium. The functions of electronic devices are not limited to these. The electronic device may have multiple display units. In addition, cameras and other devices can be installed in electronic devices to take still images and videos and store them on a recording medium (external or Even if the camera has functions such as saving the captured image to a computer (built into the camera) or displaying the captured image on the display, good.

[0575] The electronic device shown in FIGS. 23A to 23F will be described in detail below.

[0576] FIG. 23A is a perspective view showing a mobile information terminal 9101. The mobile information terminal 9101 is, for example, For example, the portable information terminal 9101 can be used as a smartphone. 9003, a connection terminal 9006, a sensor 9007, etc. may be provided. 101 can display text and image information on its multiple sides. 9 shows an example of displaying an icon 9050. Also, information 9051 shown in a dashed rectangle is displayed. It may also be displayed on another surface of the display unit 9001. An example of the information 9051 is an e-mail. Notifications of incoming emails, SNS, phone calls, etc., the subject of emails and SNS, the sender name, the date and time, The information includes the time, remaining battery power, and antenna reception strength. An icon 9050 or the like may be displayed at the position where the icon is displayed.

[0577] 23B is a perspective view showing a mobile information terminal 9102. The mobile information terminal 9102 has a display The information display unit 9001 has a function to display information on three or more sides of the information display unit 9001. 053, information 9054 are displayed on different sides. For example, the user , with the mobile information terminal 9102 stored in the breast pocket of the clothes, Users can also check the information 9053 displayed in a position that can be observed from above. The user can check the display without taking the mobile information terminal 9102 out of his pocket, and can, for example, receive a call. You can determine whether or not it is possible.

[0578] 23C is a perspective view showing a wristwatch-type mobile information terminal 9200. The display unit 9001 can be used as a smart watch, for example. The display surface is curved, and the display can be performed along the curved display surface. The portable information terminal 9200 communicates with a wireless headset, for example. The mobile information terminal 9200 also has a connection terminal 90 06 also allows data to be transmitted to and from other information terminals and for charging. The charging operation may be performed by wireless power supply.

[0579] 23D to 23F are perspective views showing a foldable mobile information terminal 9201. 23D shows the mobile information terminal 9201 in an unfolded state, FIG. 23F shows the mobile information terminal 9201 in a folded state, and FIG. 23E is a perspective view showing a state in the middle of changing from one of FIG. 23D and FIG. 23F to the other. The terminal 9201 is highly portable when folded and has a seamless, wide opening when unfolded. The display area provides excellent visibility of the display. , and is supported by three housings 9000 connected by hinges 9055. The indicator 9001 can be bent with a radius of curvature of 0.1 mm or more and 150 mm or less.

[0580] This embodiment mode can be combined with other embodiment modes and examples as appropriate. [Example]

[0581] In this example, a visible light emitting device that can be used in a light-emitting device or a display device of one embodiment of the present invention is described. The device structure of light-emitting devices that emit infrared light was investigated using software. The results will be explained below.

[0582] Specifically, in this example, a light-emitting device 4 emitting blue light and infrared light shown in FIG. 24A is used. The results of examining the device structure of 7B(IR) are explained below.

[0583] First, the actual measured values (refractive index n, extinction coefficient k, emission spectrum, etc.) were used for the calculation of this example. The structural formula of the organic compound is shown below.

[0584] [ka]

[0585] In this embodiment, an organic device simulator (semiconducting emitter) ive thin film optics simulator:setfos;sai Calculations were performed using a computer program (Vanette Systems Co., Ltd.).

[0586] In this calculation, the film thickness, refractive index n (actual measured value), and extinction coefficient of each layer constituting the light-emitting device are k (measured value), emission spectrum of the luminescent material (photoluminescence (PL) spectrum) The measured value and the position of the emission region are input, multiplied by the Purcell factor, and the exciton emission is calculated. The emission intensity and spectral waveform in the frontal direction were calculated, taking into account the modulation of the decay rate.

[0587] The refractive index n and extinction coefficient k of each layer were measured using a spectroscopic ellipsometer (J.A. Woolam, J.A. The measurement was performed using a quartz substrate (M-2000U manufactured by Pan Co., Ltd.). A film of about 50 nm thickness formed by vapor deposition was used.

[0588] The emission spectrum of the luminescent material was measured using a multi-channel spectrometer (Hamamatsu Photonics) as a visible light detector. Nix C10029-01), and a near-infrared spectroradiometer (SR-N IR (manufactured by Topcon), and ultraviolet emitting LED (NSCU033B manufactured by Nichia Corporation) as excitation light. ), UV U360 (Edmund Optics) as a bandpass filter, Ron Measurements were performed using an SCF-50S-42L (manufactured by Sigma Koki Co., Ltd.) as a pass filter.

[0589] For the measurement of visible light emission spectrum, 7-[4-(10-phenyl-9-aza- [c,g]carbazole (abbreviation: cgDBCzP A) and N,N'-bis(3-methylphenyl)-N,N'-bis[3-(9-phenyl- 9H-fluoren-9-yl)phenyl]pyrene-1,6-diamine (abbreviation: 1,6mM emFLPAPrn) by weight ratio of 1:0.03, and the film thickness was 50 nm by vacuum deposition. The film was formed by co-evaporation using

[0590] To measure the infrared emission spectrum, 2-[3'-(dibenzothiophene- 4-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBT BPDBq-II), N-(1,1'-biphenyl-4-yl)-N-[4-(9-phenyl)- (9H-carbazol-3-yl)phenyl]-9,9-dimethyl-9H-fluorene PCBBiF and bis{4,6-dimethyl-2-[3-( 3,5-Dimethylphenyl)-2-benzo[g]quinoxalinyl-κN]phenyl-κC }(2,2,6,6-tetramethyl-3,5-heptanedionato-κ 2 O,O') Iriji Ir(dmdpbq)2(dpm)]) in a weight ratio of 0.7:0 .3:0.1, film thickness 50nm was formed by co-evaporation using vacuum evaporation method The synthesis example of [Ir(dmdpbq)2(dpm)] will be described later in the Reference Examples. do.

[0591] The PL spectrum used in the calculation is shown in Figure 25. In Figure 25, the horizontal axis is the wavelength (unit: n m), and the vertical axis shows the energy-based normalized PL intensity (arbitrary units). The photon-based PL intensity is calculated by multiplying the energy-based PL intensity by the wavelength. It is possible.

[0592] The light-emitting region was assumed to be at the center of the light-emitting layer.

[0593] For both visible and infrared light, the luminescence quantum yield, exciton generation probability, and recombination probability are assumed to be 100%. In other words, the calculated external quantum efficiency (Lambertian assumption) is The light extraction efficiency calculated from the intensity assuming a Lambertian light distribution is shown.

[0594] The light-emitting device 47B (IR) used in this example shown in FIG. 24A has a charge in the intermediate layer 198. In the light-emitting device 47B(IR), the light-emitting layer 193N A light-emitting unit that emits blue light from light-emitting layer 193B on a light-emitting unit that emits infrared light from is provided.

[0595] As shown in FIG. 24A, the optical distance between the pixel electrode 191 and the light-emitting region of the light-emitting layer 193B is The optical distance between the common electrode 115 and the light-emitting region of the light-emitting layer 193B is about 3λB / 4. , λB / 4, and the optical distance between the pixel electrode 191 and the light-emitting region of the light-emitting layer 193N is , λi / 4, and the optical distance between the common electrode 115 and the light-emitting region of the light-emitting layer 193N is The initial value was set to about λi / 4, and calculations were performed.

[0596] In this embodiment, the wavelength λB of visible light is the wavelength of blue light ( The wavelength λi of the infrared light was assumed to be the secondary light of blue light (934 nm).

[0597] The device structure of the light-emitting device 47B (IR) used in this example is explained using Table 2. For the sake of simplicity, the hole injection layer, electron injection layer, and charge generation layer are omitted. Ta.

[0598] [Table 2]

[0599] The substrate 151 was assumed to be a glass substrate with a film thickness of 0.7 mm and a refractive index of 1.5.

[0600] The pixel electrode 191 is made of a silver (Ag) film having a thickness of 100 nm and a silicon oxide film having a thickness of 10 nm. A laminated structure of an indium tin oxide (ITSO) film and an indium tin oxide (ITSO) film was used.

[0601] The buffer layer 192B was assumed to be a hole transport layer and was made of PCBBiF. 2B is a layer used for optical adjustment, and the optimum film thickness was calculated.

[0602] The light-emitting layer 193N has a thickness of 40 nm and is made of 2mDBTBPDBq-II as a host material. was used.

[0603] As the intermediate layer 198, 2,9-bis(naphthalen-2-yl)-4,7-diphenyl-1 ,10-phenanthroline (abbreviation: NBphen) and a 10 nm thick 3-[4-(9- phenanthryl)-phenyl]-9-phenyl-9H-carbazole (abbreviation: PCPPn ) and a laminated structure of the intermediate layer 198. NBphen contained in the intermediate layer 198 is used for optical adjustment. The optimum film thickness was calculated.

[0604] For the light-emitting layer 193B, cgDBCzPA having a thickness of 25 nm was used as a host material.

[0605] The buffer layer 194B was assumed to be an electron transport layer and was made of NBphen. 4B is a layer used for optical adjustment, and the optimum film thickness was calculated.

[0606] The common electrode 115 was made of a silver film having a thickness of 15 nm.

[0607] The buffer layer 116 is made of 1,3,5-tri(dibenzothiophene-4- The compound used was phenyl)benzene (abbreviation: DBT3P-II).

[0608] The upper side of the buffer layer 116 (the side opposite to the side in contact with the common electrode 115) is air (refractive rate 1) was assumed.

[0609] Using the above conditions, the optimum device structure for the light-emitting device was calculated.

[0610] In the calculation, the external quantum efficiency of visible light (Lambertian assumption) is maximized for the entire light-emitting device. The optical path length and the thickness of the buffer layer 194B are calculated, and the entire light-emitting device is The external quantum efficiency (Lambertian) was measured at an optical path length of 100 nm and a thickness of 100 nm for the buffer layer 194B. The thickness of the PCBBiF of the buffer layer 192B and the thickness of the intermediate layer 192B are set to maximize the The film thickness of 98 NBPhen was determined.

[0611] Specifically, the film thickness of the NBPhen in the intermediate layer 198 is set once, and under that condition, visible light The PC of the buffer layer 192B is set to maximize the external quantum efficiency (Lambertian assumption) of The thickness of BBiF and the thickness of NBPhen in the buffer layer 194B were optimized. , the peak wavelength of the infrared light is fixed, and the external quantum efficiency (Lambertian assumption) is maximized. As shown in the figure, the thickness of the PCBBiF buffer layer 192B and the thickness of the NBPhen intermediate layer 198 are The film thickness was optimized.

[0612] As a result of calculation, as shown in Table 2, in the light-emitting device 47B(IR), the buffer layer 19 The thickness of PCBBiF in 2B is 63 nm, and the thickness of NBPhen in intermediate layer 198 is 5.6 nm. The thickness of the NBPhen layer of the buffer layer 194B was found to be 36 nm.

[0613] Figure 26 shows the calculated EL spectrum of the light-emitting device 47B(IR). In Figure 26, the horizontal axis indicates wavelength (unit: nm), and the vertical axis indicates energy-based standard The luminescence intensity (arbitrary units) is shown.

[0614] As shown in Figure 26, the peak wavelength of visible light from the light-emitting device 47B (IR) is 460 nm. The peak wavelength of the infrared light was 880 nm. It was found that the wavelength was shorter than twice the wavelength (920 nm).

[0615] The calculated external quantum efficiency of the light-emitting device 47B(IR) for visible light (Lambertian The external quantum efficiency of infrared light (Lambertian assumption) was about 30%, which was a high value. The un-assumed value was also high at about 30%.

[0616] Figure 27 shows the CIE1931 chromaticity coordinates (xy chromaticity coordinates) of the light-emitting device obtained by calculation. Figure 27 also shows the chromaticity coordinates of the NTSC standard and the BT.2020 standard. As shown, the chromaticity (x, y) of the light-emitting device in the CIE 1931 chromaticity coordinates is ( 0.138, 0.050), and the values correspond to the NTSC standard and the BT.2020 standard. It was found to show.

[0617] As described above, in the light-emitting device obtained from the calculation of this example, the peak wavelength of the infrared light is It was found that the wavelength is shorter than twice the peak wavelength of visible light (920 nm). This is thought to be due to wavelength dependency.

[0618] Here, the wavelength dependence of the ordinary light refractive index of PCBBiF and NBPhen is shown in Figure 28. In FIG. 28, as a comparative example, 1,1-bis-(4-bis(4-methylphenyl)-amine The wavelength dependence of the ordinary refractive index of (2-phenyl)-cyclohexane (abbreviation: TAPC) is also shown.

[0619] To measure the refractive index, a film of approximately 50 nm thick was used, in which each material was deposited on a quartz substrate by vacuum deposition. Since the film had anisotropy in the refractive index, the ordinary refractive index was used when calculating the refractive index. The refractive index was separated into ordinary and extraordinary light. In the above calculation, ordinary light refractive index was used.

[0620] From Figure 28, the ordinary refractive index of PCBBiF for light with a wavelength of 460 nm is approximately 1.94. The refractive index of ordinary light for light with a wavelength of 880 nm is approximately 1.77, and the difference is approximately 0.17. In addition, the ordinary refractive index of NBPhen for light with a wavelength of 460 nm is approximately 1.97. The refractive index of ordinary light for light with a wavelength of 880 nm is approximately 1.80, and the difference is approximately 0.17. In this way, PCBBiF and NBPhen, whose film thicknesses were optimized in this example, It was found that the refractive index for infrared light is lower than that of The wavelength shifted to the short wavelength side, becoming shorter than twice the peak wavelength of visible light (920 nm). It is suggested.

[0621] On the other hand, the ordinary refractive index of TAPC, shown as a comparative example, for light with a wavelength of 460 nm is approximately 1. 72, and the ordinary refractive index for light with a wavelength of 880 nm is approximately 1.65, and the difference is approximately 0 It was .07.

[0622] Thus, it was confirmed that there is a difference in the wavelength dependence of the refractive index depending on the organic film. It was suggested that the peak wavelength of infrared light could be controlled by utilizing the wavelength dependence of the refractive index.

[0623] From the results of this example, it is clear that the light emitting device can extract both blue light and infrared light with high efficiency. The device structure of the device could be estimated. [Example]

[0624] In this example, a visible light emitting device that can be used in a light-emitting device or a display device of one embodiment of the present invention is described. The device structure of light-emitting devices that emit infrared light was investigated using software. The results will be explained below.

[0625] Specifically, in this embodiment, the light emitters emitting red light and infrared light shown in FIGS. 24B and 24C are The device structures of the device 47R(IR)a and the light-emitting device 47R(IR)b were investigated. The results of the study will be explained.

[0626] In this example, calculations were performed using the same organic device simulator as in Example 1.

[0627] In this calculation, the thickness, refractive index n, and extinction coefficient k of each layer constituting the light-emitting device, The actual measured values of the emission spectrum (photoluminescence (PL) spectrum) of the material, as well as the The position of the optical region is input and multiplied by the Purcell factor to consider the modulation of the radiative decay rate of the exciton. The emission intensity and spectral waveform in the front direction were calculated taking into account the above.

[0628] In this example, as will be described later, it is assumed that the wavelength of infrared light exceeds 1000 nm. Except for the film, the refractive index and extinction coefficient of each layer are measured in the wavelength range exceeding 1000 nm. Therefore, in this example, the refractive index of all layers other than the silver film is assumed to be n=1.8. I did the calculations.

[0629] For the measurement of visible light emission spectrum, 2mDBTBPDBq-II, PCB BiF and bis{2-[5-(2,6-dimethylphenyl)-3-(3,5-dimethylphenyl)- phenyl)-2-pyrazinyl-κN]-4,6-dimethylphenyl-κC}(2,2, 6,6-Tetramethyl-3,5-heptanedionato-κ 2 O,O') Iridium(III ) (abbreviation: [Ir(dmdppr-dmp)2(dpm)]) in a weight ratio of 0.8:0.2 : 0.05, the film was formed by co-evaporation using the vacuum evaporation method to a film thickness of 50 nm The other measurement conditions were the same as in Example 1.

[0630] The structural formula of [Ir(dmdppr-dmp)2(dpm)] is shown below.

[0631] [ka]

[0632] The infrared light emission spectrum shifts the visible light emission spectrum to the longer wavelength side by 655 nm. The spectra were used.

[0633] The photoluminescence (PL) spectrum used in the calculation is shown in Figure 29. The horizontal axis indicates the wavelength (unit: nm), and the vertical axis indicates the energy-based normalized PL intensity (arbitrarily Units).

[0634] The light-emitting region was assumed to be at the center of the light-emitting layer.

[0635] For both visible and infrared light, the luminescence quantum yield, exciton generation probability, and recombination probability are assumed to be 100%. Ta.

[0636] The light-emitting device 47R(IR)a and the light-emitting device 47R(IR)b used in this example are shown in FIGS. 24B and 24C. The device 47R(IR)b has a tandem structure with a charge generating layer in the intermediate layer 198. The two light emitting devices differ from each other in the stacking order of the light emitting layer 193N and the light emitting layer 193R.

[0637] In the light-emitting device 47R(IR)a shown in FIG. 24B, infrared light is emitted from the light-emitting layer 193N. On the light emitting unit, a light emitting unit that emits red light from light emitting layer 193R is provided.

[0638] As shown in FIG. 24B, the optical distance between the pixel electrode 191 and the light-emitting region of the light-emitting layer 193R is The optical distance between the common electrode 115 and the light-emitting region of the light-emitting layer 193R is about 3λR / 4. , λR / 4, and the optical distance between the pixel electrode 191 and the light-emitting region of the light-emitting layer 193N is , λi / 4, and the optical distance between the common electrode 115 and the light-emitting region of the light-emitting layer 193N is The initial value was set to about λi / 4, and calculations were performed.

[0639] In the light-emitting device 47R(IR)b shown in FIG. 24C, red light is emitted from the light-emitting layer 193R. A light emitting unit that emits infrared light from a light emitting layer 193N is provided on the light emitting unit.

[0640] As shown in FIG. 24C, the optical distance between the pixel electrode 191 and the light-emitting region of the light-emitting layer 193R is The optical distance between the common electrode 115 and the light-emitting region of the light-emitting layer 193R is about λR / 4. The optical distance between the pixel electrode 191 and the light-emitting region of the light-emitting layer 193N is about 3λR / 4. , λi / 4, and the optical distance between the common electrode 115 and the light-emitting region of the light-emitting layer 193N is The initial value was set to about λi / 4, and calculations were performed.

[0641] In this embodiment, the wavelength λR of visible light is the wavelength of red light ( 630 nm), and the wavelength λi of the infrared light is assumed to be the secondary light of the red light (1260 nm). .

[0642] The data of the light-emitting device 47R(IR)a and the light-emitting device 47R(IR)b used in this example are The vise structure will be explained using Tables 3 and 4.

[0643] For the sake of simplicity of calculation, the hole injection layer, the electron injection layer, and the charge generation layer are omitted.

[0644] [Table 3]

[0645] [Table 4]

[0646] The substrate 151 was assumed to be a glass substrate with a film thickness of 0.7 mm and a refractive index of 1.5.

[0647] The pixel electrode 191 is a 100 nm thick silver film and a 10 nm thick layer (assuming a transparent electrode). A laminated structure of

[0648] The buffer layer 192R is assumed to be a hole transport layer. The buffer layer 192R is used for optical adjustment. The optimum film thickness was calculated.

[0649] The light-emitting layer 193N and the light-emitting layer 193R each had a film thickness of 40 nm.

[0650] As the intermediate layer 198, a layer used for optical adjustment (assuming an electron transport layer) and a layer with a film thickness of 10 nm The intermediate layer 198 has a layer structure (assuming a hole transport layer) and a layer structure (assuming a hole transport layer) (assuming a hole transport layer). The optimum film thickness of the layer was calculated.

[0651] The buffer layer 194R is assumed to be an electron transport layer. The buffer layer 194R is used for optical adjustment. The optimum film thickness was calculated.

[0652] The common electrode 115 was made of a silver film having a thickness of 15 nm.

[0653] The buffer layer 116 was a layer with a film thickness of 70 nm.

[0654] The upper side of the buffer layer 116 (the side opposite to the side in contact with the common electrode 115) is air (refractive rate 1) was assumed.

[0655] Using the above conditions, the optimum device structure for the light-emitting device was calculated.

[0656] In the calculation, the external quantum efficiency of visible light (Lambertian assumption) is maximized for the entire light-emitting device. The optical path length and the thickness of the buffer layer 194R are calculated, and the entire light-emitting device is The external quantum efficiency of infrared light (λ) was measured at an optical path length of 100 nm and a thickness of 100 nm for the buffer layer 194R. The thickness and thickness of PCBBiF in the buffer layer 192R are set to maximize the The thickness of the NBPhen intermediate layer 198 was determined.

[0657] Specifically, the film thickness of the NBPhen in the intermediate layer 198 is set once, and under that condition, visible light The PC of the buffer layer 192R is used to maximize the external quantum efficiency (Lambertian assumption) of The thickness of BBiF and the thickness of NBPhen in the buffer layer 194R were optimized. , the peak wavelength of the infrared light is fixed, and the external quantum efficiency (Lambertian assumption) is maximized. As shown in the figure, the thickness of the PCBBiF buffer layer 192R and the thickness of the NBPhen intermediate layer 198 are The film thickness was optimized.

[0658] As a result of calculation, as shown in Table 3, in the light-emitting device 47R(IR)a, the buffer layer 1 The thickness of PCBBiF in 92R is 106nm, and the thickness of NBPhen in the intermediate layer 198 is 27nm. The thickness of the NBPhen buffer layer 194R was 58 nm. As shown in Table 4, in the light-emitting device 47R(IR)b, the PC of the buffer layer 192R The thickness of BBiF is 35 nm, the thickness of NBPhen in the intermediate layer 198 is 30 nm, and the thickness of the buffer layer The film thickness of 194R NBPhen was determined to be 127 nm.

[0659] 30 and 31 show the light-emitting device 47R(IR)a and the light-emitting device 47R(IR)a obtained by calculation. 30 and 31 show the emission (EL) spectrum of 47R(IR)b. The vertical axis indicates the wavelength (unit: nm), and the vertical axis indicates the energy-based normalized luminescence intensity (arbitrary unit). vinegar.

[0660] As shown in FIG. 30, the peak wavelength of visible light from the light-emitting device 47R(IR)a is 612 nm. The peak wavelength of the infrared light was 1272 nm. It was found that the value was close to twice the peak wavelength (1224 nm).

[0661] The calculated external quantum efficiency of the light-emitting device 47R(IR)a is The external quantum efficiency of infrared light (lumber assumption) was about 38%, which was a high value. The peak wavelength of infrared light is assumed to be cyan, which is about 90%, a high value. (1260 nm), the effect of the microcavity structure is It is believed that the light extraction efficiency has been significantly improved.

[0662] As shown in FIG. 31, the peak wavelength of visible light from the light-emitting device 47R(IR)b is 614 nm. The peak wavelength of the infrared light was 1274 nm. It was found that the value was close to twice the peak wavelength (1228 nm).

[0663] The calculated external quantum efficiency of the light-emitting device 47R(IR)b is The external quantum efficiency of infrared light (lumber assumption) was about 34%, which was a high value. The peak wavelength of infrared light is about 88%, which is a high value. (1260 nm), the effect of the microcavity structure is It is believed that the light extraction efficiency has been significantly improved.

[0664] 32 and 33 show the light-emitting device 47R(IR)a and the light-emitting device 47R(IR)a obtained by calculation. The CIE1931 chromaticity coordinates (xy chromaticity coordinates) of 47R(IR)b are shown in Figures 32 and 3. 3 also shows the chromaticity coordinates of the NTSC standard and the BT.2020 standard. As shown in Figure 32, The chromaticity (x, y) of the light-emitting device 47R(IR)a in the CIE1931 chromaticity coordinates is ( As shown in FIG. 33, the light-emitting device 47R (IR) The chromaticity (x,y) of b in the CIE1931 chromaticity coordinates is (0.662, 0.338). 32 and 33, the light-emitting device 47R(IR)a and the light-emitting device 47R (IR)b indicates values corresponding to both the NTSC standard and the BT.2020 standard. I found out.

[0665] From the results of this example, it can be seen that regardless of the lamination order of the red light emitting layer and the infrared light emitting layer, red light and Estimating the device structure of a light-emitting device that can extract both infrared and ultraviolet light with high efficiency I was able to do it. [Example]

[0666] In this example, a visible light emitting device that can be used in a light-emitting device or a display device of one embodiment of the present invention is described. The device structure of light-emitting devices that emit infrared light was investigated using software. The results will be explained below.

[0667] Specifically, in this embodiment, a light-emitting device 4 emitting red light and infrared light as shown in FIG. 24D is used. The results of examining the device structure of 7R(IR)c are explained below.

[0668] In this example, calculations were performed using the same organic device simulator as in Example 1.

[0669] In this calculation, the film thickness, refractive index n (actual measured value), and extinction coefficient of each layer constituting the light-emitting device are k (measured value), emission spectrum of the luminescent material (photoluminescence (PL) spectrum) The measured value and the position of the emission region are input, multiplied by the Purcell factor, and the exciton emission is calculated. The emission intensity and spectral waveform in the frontal direction were calculated, taking into account the modulation of the decay rate.

[0670] The refractive index n and extinction coefficient k of each layer were measured using a spectroscopic ellipsometer (J.A. Woolam, J.A. The measurement was performed using a quartz substrate (M-2000U manufactured by Pan Co., Ltd.). A film of about 50 nm thickness formed by vapor deposition was used.

[0671] For the measurement of visible light emission spectrum, 2mDBTBPDBq-II, PCB BiF, and bis{4,6-dimethyl-2-[5-(5-cyano-2-methylphenyl) -3-(3,5-dimethylphenyl)-2-pyrazinyl-κN]phenyl-κC}(2, 2,6,6-tetramethyl-3,5-heptanedionato-κ 2 O,O') Iridium (I II) (abbreviation: [Ir(dmdppr-mCP)(dpm)]) in a weight ratio of 0.8: The film was formed by co-evaporation using the vacuum evaporation method so that the ratio of the SiO2 to the SiO2 was 0.2:0.1 and the film thickness was 50 nm. The other measurement conditions were the same as in Example 1.

[0672] The structural formula of [Ir(dmdppr-m5CP)2(dpm)] is shown below.

[0673] [ka]

[0674] The emission spectrum of the infrared light used in this example is the same as that in Example 1.

[0675] The photoluminescence (PL) spectrum used in the calculation is shown in Figure 34. The horizontal axis indicates the wavelength (unit: nm), and the vertical axis indicates the energy-based normalized PL intensity (arbitrarily Units).

[0676] The light-emitting region was assumed to be at the center of the light-emitting layer.

[0677] For both visible and infrared light, the luminescence quantum yield, exciton generation probability, and recombination probability are assumed to be 100%. Ta.

[0678] The light-emitting device 47R(IR)c used in this example shown in FIG. 24D has an intermediate layer 198. It has a tandem structure with a load-generating layer.

[0679] In the light-emitting device 47R(IR)c shown in FIG. 24D, infrared light is emitted from the light-emitting layer 193N. On the light emitting unit, a light emitting unit that emits red light from light emitting layer 193R is provided.

[0680] As shown in FIG. 24D, the optical distance between the pixel electrode 191 and the light-emitting region of the light-emitting layer 193R is The optical distance between the common electrode 115 and the light-emitting region of the light-emitting layer 193R is about 5λR / 4. , λR / 4, and the optical distance between the pixel electrode 191 and the light-emitting region of the light-emitting layer 193N is , λi / 4, and the optical distance between the common electrode 115 and the light-emitting region of the light-emitting layer 193N is The initial value was set to about 3λi / 4, and calculations were performed.

[0681] In this embodiment, the wavelength λR of visible light is the wavelength of red light ( 630 nm), and the wavelength λi of the infrared light was assumed to be 945 nm.

[0682] The device structure of the light-emitting device 47R(IR)c used in this example is shown in Table 5. explain.

[0683] For the sake of simplicity of calculation, the hole injection layer, the electron injection layer, and the charge generation layer are omitted.

[0684] [Table 5]

[0685] The substrate 151 was assumed to be a glass substrate with a film thickness of 0.7 mm and a refractive index of 1.5.

[0686] The pixel electrode 191 is a laminate of a silver film with a thickness of 100 nm and an ITSO film with a thickness of 10 nm. structure was used.

[0687] The buffer layer 192R was assumed to be a hole transport layer and was made of PCBBiF. 2R is a layer used for optical adjustment, and the optimum film thickness was calculated.

[0688] The light-emitting layer 193N and the light-emitting layer 193R each have a thickness of 40 nm, and the host material is 2mDBTBPDBq-II was used.

[0689] The intermediate layer 198 is a laminated structure of NBphen and PCBBiF with a film thickness of 10 nm. The NBphen contained in the intermediate layer 198 is a layer used for optical adjustment, and calculations have shown that The optimum film thickness was determined.

[0690] The buffer layer 194R was assumed to be an electron transport layer and was made of NBphen. 4R is a layer used for optical adjustment, and the optimum film thickness was calculated.

[0691] The common electrode 115 was made of a silver film having a thickness of 15 nm.

[0692] The buffer layer 116 was made of DBT3P-II with a thickness of 70 nm.

[0693] The upper side of the buffer layer 116 (the side opposite to the side in contact with the common electrode 115) is air (refractive rate 1) was assumed.

[0694] Using the above conditions, the optimum device structure for the light-emitting device was calculated. The method is the same as in Example 2, so details are omitted.

[0695] As a result of calculation, as shown in Table 5, in the light-emitting device 47R(IR)c, the buffer layer 1 The thickness of PCBBiF in 92R is 99nm, and the thickness of NBPhen in intermediate layer 198 is 229nm. The thickness of the NBPhen layer in the buffer layer 194R was determined to be 60 nm.

[0696] Figure 35 shows the calculated EL spectrum of the light-emitting device 47R(IR)c. In FIG. 35, the horizontal axis indicates wavelength (unit: nm), and the vertical axis indicates energy-based standard. The calculated luminescence intensity (arbitrary units) is shown.

[0697] As shown in FIG. 35, the peak wavelength of visible light from the light-emitting device 47R(IR)c is 651 nm. The peak wavelength of the infrared light was 978 nm. It was found that the value was almost the same as 1.5 times the peak wavelength (977 nm).

[0698] The calculated external quantum efficiency of the light-emitting device 47R(IR)c is The external quantum efficiency of infrared light (lumber assumption) was about 27%, which was a high value. The cyanide assumption was also high at about 11%.

[0699] Figure 36 shows the calculated CIE 1931 chromaticity coordinates of the light-emitting device 47R(IR)c. (xy chromaticity coordinates). Figure 36 shows the chromaticity coordinates of the NTSC standard and the BT.2020 standard. As shown in Figure 36, the CIE 1931 chromaticity coordinates of the light-emitting device 47R(IR)c are The chromaticity (x, y) at the time of the light emission was (0.704, 0.285). The Vise 47R(IR)c indicates values corresponding to the NTSC standard and the BT.2020 standard. I found out that...

[0700] From the results of this example, it is clear that the light emitting device can extract both red light and infrared light with high efficiency. The device structure of the device could be estimated.

[0701] (Reference example) The bis{4,6-dimethyl-2-[3-(3,5-dimethylphenyl )-2-benzo[g]quinoxalinyl-κN]phenyl-κC}(2,2,6,6-tetrabenzo[g]quinoxalinyl-κN]phenyl-κC Trimethyl-3,5-heptanedionate-κ 2 O,O')iridium(III) (abbreviation: [ The synthesis method of [Ir(dmdpbq)2(dpm)]) will be specifically explained. The structure of (dmdpbq)2(dpm)] is shown below.

[0702] [ka]

[0703] Step 1: 2,3-bis-(3,5-dimethylphenyl)-2-benzo[g]quinoxazone Synthesis of Sarin (abbreviation: Hdmdpbq) First, in step 1, Hdmdpbq was synthesized. 3.20 g of benzil, 1.97 g of 2,3-diaminonaphthalene, 60 mL of ethanol, The contents were placed in a three-necked flask equipped with a reflux condenser, and after replacing the inside with nitrogen, the contents were stirred at 90°C for 7.5 hours. After a predetermined time had passed, the solvent was distilled off. The target product was obtained by HPLC (yellow solid, 3.73 g, yield 79%). The synthesis scheme for step 1 is shown in (a-1).

[0704] [ka]

[0705] Nuclear magnetic resonance spectroscopy of the yellow solid obtained in step 1 ( 1 The analysis results by H-NMR are shown below. The analysis results show that Hdmdpbq was obtained.

[0706] of the obtained material 1 The 1 H NMR data is shown below. 1 H-NMR.δ(CD2Cl2):2.28(s,12H),7.01(s,2H) ,7.16(s,4H),7.56-7.58(m,2H),8.11-8.13(m, 2H),8.74(s,2H).

[0707] Step 2: Di-μ-chloro-tetrakis{4,6-dimethyl-2-[3-(3,5- Dimethylphenyl)-2-benzo[g]quinoxalinyl-κN]phenyl-κC}diyl Synthesis of Ir(III) (abbreviation: [Ir(dmdpbq)2Cl]2) Next, in step 2, [Ir(dmdpbq)2Cl]2 was synthesized. 15 mL of ethanol, 5 mL of water, 1.81 g of Hdmdpbq obtained in step 1, and 0.66 g of iridium hydrate (IrCl3·H2O) (Furuya Metal Co., Ltd.) was placed in a The flask was then purged with argon. The reaction was carried out by irradiating the mixture with a 5 GHz (100 W) power for 2 hours. After the specified time had elapsed, the resulting residue was The product was filtered off under suction and washed with ethanol to obtain the target product (black solid, yield 1.76 g, 81%). The synthesis scheme for step 2 is shown in (a-2).

[0708] [ka]

[0709] Step 3: Synthesis of [Ir(dmdpbq)2(dpm)] In step 3, [Ir(dmdpbq)2(dpm)] was synthesized. 20 mL of ethanol, 1.75 mL of [Ir(dmdpbq)Cl] obtained in Step 2 g, dipivaloylmethane (abbreviation: Hdpm) 0.50 g, and sodium carbonate 0.95 g was placed in a recovery flask equipped with a reflux condenser, and the atmosphere in the flask was replaced with argon. The resulting residue was irradiated with microwaves (2.45 GHz, 100 W) for 3 hours. The solid was filtered under suction, washed with water and methanol, and the resulting solid was extracted with dichloromethane. After purification by silica gel column chromatography using dichloromethane and methyl The target product was obtained by recrystallization from a mixed solvent of ethanol and ethanol (dark green solid, yield 0.4%). 2g, yield 21%). 0.41g of the obtained dark green solid was subjected to the train sublimation method. The sublimation purification conditions were a pressure of 2.7 Pa and an argon gas flow rate of 10.5 mL. The dark green solid was heated at 300°C while flowing at a rate of 1 / min. After purification by sublimation, the dark green solid was collected. The synthesis scheme for step 3 is shown in (a-3).

[0710] [ka]

[0711] Nuclear magnetic resonance spectroscopy of the dark green solid obtained in step 3 ( 1 H-NMR) The analytical results show that [Ir(dmdpbq)2(dpm)] was obtained. It was.

[0712] 1 H-NMR.δ(CD2Cl2):0.75(s,18H),0.97(s,6H) ,2.01(s,6H),2.52(s,12H),4.86(s,1H),6.39( s,2H),7.15(s,2H),7.31(s,2H),7.44-7.51(m, 4H),7.80(d,2H),7.86(s,4H),8.04(d,2H),8.4 2(s,2H),8.58(s,2H). [Explanation of symbols]

[0713] C1: Capacitor, C2: Capacitor, M1: Transistor, M2: Transistor, M3: Transistor M4: transistor, M5: transistor, M6: transistor, M7: transistor OUT1: Wiring, OUT2: Wiring, PIX1: Pixel circuit, PIX2: Pixel circuit, V1 :Wiring, V2:Wiring, V3:Wiring, V4:Wiring, V5:Wiring, 10A:Display device, 10B :Display device, 10C:Display device, 10D:Display device, 10E:Display device, 10F:Display device 21B: Light, 21G: Light, 21N: Infrared light, 22: Light, 23a: Light, 23b: Reflected light , 30A: Light emitting device, 30B: Light emitting device, 30C: Light emitting device, 30D: Light emitting device, 30E : light emitting device, 30F: light emitting device, 40A: light emitting device, 40B: light emitting device, 40C: light emitting device 40D: Light emitting device, 40E: Light emitting device, 40F: Light emitting device, 40G: Light emitting device, 40 H: light-emitting device, 41: transistor, 42: transistor, 45: transistor layer, 47B: light-emitting device, 47G: light-emitting device, 47N: light-emitting device, 47R: light-emitting device Optical device, 50A: display device, 50B: display device, 52: finger, 53: light receiving device 55: Layer having a transistor; 57: Layer having a light-emitting device; 100A: Surface Display device, 100B: Display device, 100C: Display device, 100D: Display device, 110: Light receiving Device, 112: common layer, 114: common layer, 115: common electrode, 116: buffer layer, 141a: filter, 141b: filter, 142: adhesive layer, 143: space, 148a: Colored layer, 149: lens, 151: substrate, 152: substrate, 153: substrate, 154: substrate, 155: adhesive layer, 162: display section, 163: light-emitting section, 164: circuit, 165: wiring, 16 6: conductive layer, 172: FPC, 173: IC, 181: pixel electrode, 182: buffer layer, 183: active layer, 184: buffer layer, 190: light-emitting device, 190B: light-emitting device 190G: light emitting device, 191: pixel electrode, 191B: pixel electrode, 191G: pixel electrode pole, 192: buffer layer, 192B: buffer layer, 192G: buffer layer, 192R: buffer Buffer layer, 193: light-emitting layer, 193B: light-emitting layer, 193G: light-emitting layer, 193N: light-emitting layer, 193R: light-emitting layer, 194: buffer layer, 194B: buffer layer, 194G: buffer layer 194R: buffer layer, 195: protective layer, 195a: inorganic insulating layer, 195b: organic insulating layer layer, 195c: inorganic insulating layer, 198: intermediate layer, 200A: light emitting device, 200B: light emitting device , 201: transistor, 202: transistor, 204: connection part, 205: transistor 206: transistor, 207: transistor, 208: transistor, 209: Transistor, 210: transistor, 211: insulating layer, 212: insulating layer, 213: insulating layer , 214: insulating layer, 215: insulating layer, 216: partition wall, 217: partition wall, 218: insulating layer, 2 21: Conductive layer, 222a: Conductive layer, 222b: Conductive layer, 223: Conductive layer, 225: Insulating layer 228: region, 231: semiconductor layer, 231i: channel forming region, 231n: low resistance region area, 242: connection layer, 6500: electronic device, 6501: housing, 6502: display unit, 650 3: Power button, 6504: Button, 6505: Speaker, 6506: Microphone, 6507 : camera, 6508: light source, 6510: protective member, 6511: display panel, 6512: light Optical materials, 6513: Touch sensor panel, 6515: FPC, 6516: IC, 6517 : Printed circuit board, 6518: Battery, 7000: Display unit, 7100: Television device , 7101: Housing, 7103: Stand, 7111: Remote control unit, 7200: Notebook Type personal computer, 7211: Housing, 7212: Keyboard, 7213: Pointer 7214: External connection port, 7300: Digital signage, 730 1: Housing, 7303: Speaker, 7311: Information terminal, 7400: Digital signage ,7401: Pillar, 7411: Information terminal, 9000: Housing, 9001: Display unit, 9003 : Speaker, 9005: Operation keys, 9006: Connection terminal, 9007: Sensor, 9008: Micro...

Claims

1. a first electrode, a first light-emitting layer, a second light-emitting layer, and a second electrode; the first light-emitting layer and the second light-emitting layer are respectively located between the first electrode and the second electrode; the first light-emitting layer includes a light-emitting material that emits infrared light; the second light-emitting layer includes a light-emitting material that emits visible light; A light-emitting device that has the ability to emit both infrared and visible light.

2. In claim 1, the first electrode has a function of reflecting visible light and infrared light; the second electrode has a function of transmitting visible light and infrared light; The first light-emitting layer is located between the first electrode and the second light-emitting layer.

3. In claim 2, The second light-emitting layer comprises a light-emitting material that emits blue light.

4. In any one of claims 1 to 3, The first light-emitting layer has a peak wavelength λ ａ It emits light of The second light-emitting layer has a peak wavelength λ ｂ It emits light of The light emitting region of the first light emitting layer has an optical distance λ from the first electrode. ａ / 4 or nearby, The light emitting region of the second light emitting layer has an optical distance of 3λ from the first electrode. ｂ / 4 or nearby light emitting device.

5. In any one of claims 1 to 3, A hole transport layer is provided. The first light-emitting layer has a peak wavelength λ ａ It emits light of The second light-emitting layer has a peak wavelength λ ｂ It emits light of The hole transport layer has a wavelength λ ｂ The ordinary refractive index for light with wavelength λ ａ A light-emitting device having a refractive index that is 0.1 or more higher than the ordinary refractive index for light.

6. In any one of claims 1 to 3, an electron transport layer; The first light-emitting layer has a peak wavelength λ ａ It emits light of The second light-emitting layer has a peak wavelength λ ｂ It emits light of The electron transport layer is ｂ The ordinary refractive index for light with wavelength λ ａ A light-emitting device having a refractive index that is 0.1 or more higher than the ordinary refractive index for light.

7. In claim 1, the first electrode has a function of reflecting visible light and infrared light; the second electrode has a function of transmitting visible light and infrared light; the second light-emitting layer being located between the first electrode and the first light-emitting layer.

8. In any one of claims 1 to 7, a charge generating layer; The light-emitting device wherein the charge generating layer is located between the first light-emitting layer and the second light-emitting layer.

9. In any one of claims 1 to 8, A light-emitting device having a micro-optical resonator structure configured to enhance both red, green, or blue light and infrared light.

Images