Organic device, manufacturing method thereof, display device, photoelectric conversion device, electronic equipment, illumination device and mobile body

Abstract

To provide a technique advantageous in suppressing lowering of image quality due to color mixture.SOLUTION: An organic device comprises: a reflection film arranged on a substrate; a first insulation film covering the reflection film; a plurality of lower electrodes arranged on the first insulation film; a second insulation film covering a peripheral part of each of the plurality of lower electrodes and the first insulation film between the plurality of lower electrodes; an organic function film covering the plurality of lower electrodes and the second insulation film; and an upper electrode arranged on the organic function film. The reflection film includes a first reflection part for a first pixel and a second reflection part for a second pixel. When a thickness of the first insulation film disposed on a central part of the first reflection part is referred to as T1, a thickness of the first insulation film disposed on a central part of the second reflection part is referred to as T2, a level difference of a surface of the first insulation film on the first reflection part is referred to as ΔT1, and a level difference of the surface of the first insulation film on the second reflection part is referred to as ΔT2, relations of T1>T2 and ΔT1<ΔT2 are satisfied.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to an organic device, a manufacturing method thereof, a display device, a photoelectric conversion device, an electronic device, a lighting device, and a mobile object. [Background technology]

[0002] Organic devices having an organic functional layer containing an organic compound, such as a light-emitting device having an organic electroluminescence (hereinafter referred to as organic EL) film, are known. Patent Document 1 describes an electro-optical device configured to obtain a desired luminescent color for each of the B, G, and R pixels by transmitting light emitted from an organic EL element through a color filter. In this electro-optical device, an optical resonance structure is constructed between a power line that functions as a reflective layer for each of the B, G, and R pixels and an opposing electrode, and light emission with enhanced brightness is obtained at the resonance wavelength corresponding to each of the B, G, and R luminescent colors. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 2017-107887 Summary of the Invention [Problem to be solved by the invention]

[0004] In the electro-optical device described in Patent Document 1, there is a large difference in the pixel edge structure between pixels of different colors. Therefore, in the electro-optical device described in Patent Document 1, the leakage current between adjacent pixels may vary greatly depending on the color combination of the adjacent pixels, which is disadvantageous in terms of suppressing degradation of image quality due to color mixing, for example.

[0005] An object of the present invention is to provide an advantageous technique for suppressing degradation of image quality due to leakage current between pixels. [Means for solving the problem]

[0006] One aspect of the present invention relates to an organic device comprising: a reflective film disposed on a substrate; a first insulating film covering the reflective film; a plurality of lower electrodes disposed on the first insulating film; a second insulating film covering the peripheral portions of each of the plurality of lower electrodes and the first insulating film between the plurality of lower electrodes; an organic functional film covering the plurality of lower electrodes and the second insulating film; and an upper electrode disposed on the organic functional film, wherein the reflective film includes a first reflective portion for a first pixel and a second reflective portion for a second pixel, and wherein when a thickness of the first insulating film disposed on a central portion of the first reflective portion is T1, a thickness of the first insulating film disposed on a central portion of the second reflective portion is T2, a step of the surface of the first insulating film above the first reflective portion is ΔT1, and a step of the surface of the first insulating film above the second reflective portion is ΔT2, T1>T2 and ΔT1<ΔT2 are satisfied. [Effects of the Invention]

[0007] According to the present invention, an advantageous technique is provided for suppressing degradation of image quality due to leakage current between pixels. [Brief explanation of the drawings]

[0008] [Figure 1] FIG. 1 is a schematic view showing a cross-sectional structure of an organic device according to a first embodiment. [Figure 2] FIG. 4 is a schematic diagram showing a cross-sectional structure of an organic device according to a modified example of the first embodiment. [Figure 3] 2A to 2C are views showing a method for manufacturing an organic device according to the first embodiment. [Figure 4] 2A to 2C are views showing a method for manufacturing an organic device according to the first embodiment. [Figure 5] FIG. 6 is a schematic view showing a cross-sectional structure of an organic device according to a second embodiment. [Figure 6] 5A to 5C are views showing a method for manufacturing an organic device according to a second embodiment. [Figure 7] 5A to 5C are views showing a method for manufacturing an organic device according to a second embodiment. [Figure 8] FIG. 10 is a plan view schematically showing an organic device according to a third embodiment. [Figure 9]FIG. 10 is a diagram schematically showing a cross-sectional structure of an organic device according to a third embodiment. [Figure 10] FIG. 10 is a schematic plan view of an organic device according to a fourth embodiment. [Figure 11] FIG. 10 is a diagram schematically showing a cross-sectional structure of an organic device according to a fourth embodiment. [Figure 12] FIG. 10 is a diagram schematically showing a cross-sectional structure of an organic device according to a fifth embodiment. [Figure 13] FIG. 1 is a schematic diagram illustrating an example of a display device. [Figure 14] FIG. 1 is a schematic diagram illustrating an example of a display device. [Figure 15] FIG. 1 is a schematic diagram illustrating an example of a display device. [Figure 16] 1A and 1B are schematic diagrams illustrating examples of a lighting device and a moving object. [Figure 17] FIG. DETAILED DESCRIPTION OF THE INVENTION

[0009] Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. Note that the following embodiments do not limit the scope of the invention claimed. Although multiple features are described in the embodiments, not all of these multiple features are necessarily essential to the invention, and multiple features may be combined arbitrarily. Furthermore, in the accompanying drawings, the same reference numerals are used to designate the same or similar components, and redundant explanations will be omitted.

[0010] FIG. 1 schematically shows the cross-sectional structure of the organic device 1 of the first embodiment. FIG. 2 schematically shows the cross-sectional structure of the organic device 1 of a modified example of the first embodiment. The organic device 1 includes a first pixel 201r, a second pixel 201g, and a third pixel 201b. The first pixel 201r, the second pixel 201g, and the third pixel 201b are pixels that have different structures of the optical adjustment film 114 described below. The first pixel 201r, the second pixel 201g, and the third pixel 201b are pixels that emit different colors of light from the organic device 1 to the outside. The first pixel 201r emits red (R) light, the second pixel 201g emits green (G) light, and the third pixel 201b emits blue (B) light. The organic device 1 may have a plurality of first pixels 201r, a plurality of second pixels 201g, and a plurality of third pixels 201b. When the first pixel 201r, the second pixel 201g, and the third pixel 201b are arranged as schematically shown in Fig. 6, the cross-sectional structures of Fig. 1 and Fig. 2 may correspond to the cross section taken along line CC' in Fig. 6. In Fig. 6, R, G, and B correspond to the first pixel 201r, the second pixel 201g, and the third pixel 201b, respectively.

[0011] The organic device 1 may include a substrate such as a semiconductor substrate 101. A MOS transistor for driving a light-emitting element (organic EL element) and an element isolation region 102 (e.g., STI) may be disposed on the semiconductor substrate 101. The MOS transistor may include a gate electrode 103 and a source / drain region 104. A first interlayer insulating film 105 may be disposed on the semiconductor substrate 101, and a first wiring layer 107 may be disposed on the first interlayer insulating film 105. The gate electrode 103 and the source / drain region 104 may be electrically connected to any of the first wiring patterns of the first wiring layer 107 via first conductive plugs 106. The first interlayer insulating film 105 may be, for example, a BPSG film formed by thermal CVD or a SiO2 film formed by plasma CVD. The first wiring layer pattern of the first wiring layer 107 may be, for example, an AlCu film having a barrier metal such as Ti / TiN. The first conductive plug 106 can be, for example, a W plug having a barrier metal such as Ti / TiN.

[0012] A second interlayer insulating film 108 may be disposed on the first wiring layer 107, and multiple reflective portions (reflective films) 110 may be disposed on the second interlayer insulating film 108. The first wiring pattern of the first wiring layer 107 and the corresponding reflective portions 110 may be electrically connected via second conductive plugs 109. The second interlayer insulating film 108 may be, for example, SiO2 formed by plasma CVD. The multiple reflective portions 110 may be made of any reflective material. The material of the multiple reflective portions 110 is preferably a highly reflective material such as Al, Ag, or Pt, or may be an alloy containing these. In particular, Al or an alloy containing Al as a main component is preferable because it facilitates high definition. Furthermore, a laminated structure may be used, and the second interlayer insulating film 108 may be an AlCu film having a barrier metal such as Ti / TiN between it and the second interlayer insulating film 108. The second conductive plug 109 may be, for example, a W film having a barrier metal such as Ti / TiN. The multiple reflective portions 110 may be disposed in the wiring layer.

[0013] An optical adjustment film 114 may be disposed so as to cover the multiple reflective portions 110. The optical adjustment film 114 may include a first film 111, a second film 112 disposed (laminated) on the first film 111, and a third film 113 disposed (laminated) on the second film 112. However, the optical adjustment film 114 may include a portion configured of a laminated film of the first film 111, the second film 112, and the third film 113, a portion configured of a laminated film of the second film 112 and the third film 113, and a portion configured of a single layer film made of the third film 113. The optical adjustment film 114, or the first film 111, the second film 112, and the third film 113, are light-transmitting insulating films and may be configured of, for example, a SiO2 film, a SiN film, or a SiON film. In a region where both the first film 111 and the second film 112 are present, the second film 112 is disposed on the first film 111. In a region where all of the first film 111, the second film 112, and the third film 113 are present, the third film 113 is disposed on the second film 112, and the second film 112 is disposed on the first film 111.

[0014] In the first embodiment, the first pixel 201r has an optical adjustment film 114r on the reflective portion 110 for the first pixel 201r, and the optical adjustment film 114r is composed of a stacked film of a first film 111, a second film 112, and a third film 113. The optical adjustment film 114r has a portion composed of the stacked film of the first film 111, the second film 112, and the third film 113 in the peripheral portion of the reflective portion 110 for the first pixel 201r. The optical adjustment film 114r has a portion composed of the stacked film of the first film 111, the second film 112, and the third film 113 in the central portion of the reflective portion 110 for the first pixel 201r. The thickness of the optical adjustment film 114r in the central portion of the reflective portion 110 for the first pixel 201r is Tr. The optical adjustment film 114r of the first pixel 201r has a step ΔTr on its surface (upper surface). Here, the step difference ΔTr may be 0. That is, the step difference Tr is 0 or more. In the examples of FIGS. 1 and 2, the step difference ΔTr is 0 and is not shown. It is preferable that the film thickness of the optical adjustment film 114r located in the center of the reflective section 110 is approximately the same as that of the optical adjustment film 114r located in the peripheral section of the reflective section 110. In this specification, the center of a certain member (e.g., a reflective section, a lower electrode) means, in a plan view (top view), a range of D / 3 from the center of gravity of the member, where D is the distance from the center of gravity to the edge of the member. Furthermore, the peripheral section of the member means a range of D / 8 from the edge of the member toward the center of gravity of the member.

[0015] In the first embodiment, the second pixel 201g has an optical adjustment film 114g. The optical adjustment film 114g has a portion composed of a stacked film of a first film 111, a second film 112, and a third film 113 in the peripheral portion of the reflective portion 110 for the second pixel 201g. The optical adjustment film 114g also has a portion composed of a stacked film of the second film 112 and the third film 113 in the central portion of the reflective portion 110 for the second pixel 201g. The thickness of the optical adjustment film 114g in the central portion of the reflective portion 110 for the second pixel 201g is Tg. The optical adjustment film 114g of the second pixel 201g has a step ΔTg on its surface (upper surface) due to the difference in thickness between the peripheral portion and the central portion. Here, ΔTg is greater than 0. It is preferable that the optical adjustment film 114g located in the center of the reflecting section 110 has a smaller film thickness than the optical adjustment film 114g located in the peripheral part of the reflecting section 110.

[0016] In the first embodiment, the third pixel 201b has an optical adjustment film 114b. The optical adjustment film 114b has a portion configured as a stacked film of the first film 111, the second film 112, and the third film 113 in the peripheral portion of the reflective portion 110 for the third pixel 201b. The optical adjustment film 114b also has a portion configured as a single-layer film made of the third film 113 in the central portion of the reflective portion 110 for the third pixel 201b. The thickness of the optical adjustment film 114b in the central portion of the reflective portion 110 for the third pixel 201b is Tb. The optical adjustment film 114b of the third pixel 201b has a step ΔTb on its surface (upper surface) due to the difference in thickness between the peripheral portion and the central portion. Here, ΔTb is greater than 0. Note that the optical adjustment film 114b located in the central portion of the reflective portion 110 preferably has a smaller thickness than the optical adjustment film 114b located in the peripheral portion of the reflective portion 110.

[0017] Here, it is preferable that Tr>Tg and ΔTr<ΔTg are satisfied. This means reducing the difference in thickness between the optical adjustment film 114r in the peripheral portion of the reflective portion 110 for the first pixel 201r and the optical adjustment film 114g in the peripheral portion of the reflective portion 110 for the second pixel 201g. This configuration means that it is possible to reduce the difference in magnitude of the leakage current between the first pixel 201r and other pixels (the second pixel 201g and the third pixel 201b) and the leakage current between the second pixel 201g and other pixels (the first pixel 201r and the third pixel 201b). Therefore, this configuration is advantageous for keeping the leakage current between the first pixel 201r and other pixels and the leakage current between the second pixel 201g and other pixels at constant values, and as a result, is advantageous for keeping the leakage current between pixels at a constant value. Furthermore, such a configuration is advantageous for making the leakage current between the lower electrode 115 and the upper electrode 120 equal between the first pixel 201r and the second pixel 201g, and is effective for suppressing degradation of image quality due to color mixing. In particular, it is preferable that the thickness of the optical adjustment film 114r in the peripheral part of the reflective part 110 for the first pixel 201r is approximately the same as the thickness of at least a part of the optical adjustment film 114g in the peripheral part of the reflective part 110 for the second pixel 201g.

[0018] Alternatively, it is preferable that Tg > Tb and ΔTg < ΔTb are satisfied. This means reducing the difference in thickness between the optical adjustment film 114g in the peripheral portion of the reflective portion 110 for the second pixel 201g and the optical adjustment film 114b in the peripheral portion of the reflective portion 110 for the third pixel 201b. This configuration means that it is possible to reduce the difference in magnitude of the leakage current between the second pixel 201g and other pixels (the first pixel 201r, the third pixel 201b) and the leakage current between the third pixel 201b and other pixels (the first pixel 201r, the second pixel 201g). Therefore, this configuration is advantageous for keeping the leakage current between the second pixel 201g and other pixels and the leakage current between the third pixel 201b and other pixels at constant values, and as a result, is advantageous for keeping the leakage current between pixels at a constant value. Furthermore, such a configuration is advantageous for making the leakage current between the lower electrode 115 and the upper electrode 120 equal between the second pixel 201g and the third pixel 201b, and is effective for suppressing degradation of image quality due to color mixing. In particular, it is preferable that the thickness of the optical adjustment film 114g in the peripheral part of the reflective part 110 for the second pixel 201g is approximately the same as the thickness of at least a part of the optical adjustment film 114b in the peripheral part of the reflective part 110 for the second pixel 201b.

[0019] Furthermore, it is preferable that Tr>Tg>Tb and ΔTr<ΔTg<ΔTb are satisfied. This means that the difference in thickness between the optical adjustment films 114r, 114g, and 114b in the peripheral portions of the reflective portion 110 for the first pixel 201r, the second pixel 201g, and the third pixel 201b is reduced. This configuration reduces the difference in the magnitude of leakage current between the first pixel 201r, the second pixel 201g, and the third pixel 201b. Therefore, this configuration is advantageous for keeping the leakage current between the pixels at a constant value. This configuration is also advantageous for making the leakage current between the lower electrode 115 and the upper electrode 120 equal in the first pixel 201r, the second pixel 201g, and the third pixel 201b, and is effective for suppressing degradation of image quality due to color mixing. In particular, it is preferable that the thicknesses of at least a portion of the optical adjustment film 114r, the optical adjustment film 114g, and the optical adjustment film 114b in the peripheral parts of the reflective part 110 for each of the first pixel 201r, the second pixel 201g, and the third pixel 201b are approximately the same. Furthermore, it is preferable that the thicknesses of the optical adjustment film 114r, the optical adjustment film 114g, and the optical adjustment film 114b in the peripheral parts of the reflective part 110 for each of the first pixel 201r, the second pixel 201g, and the third pixel 201b, and at least a portion of the optical adjustment film 114r located in the center of the reflective part 110 of the first pixel 201r are approximately the same.

[0020] A plurality of lower electrodes 115 may be disposed on the optical adjustment films 114 (114r, 114g, 114b). The plurality of lower electrodes 115 may be made of a transparent material, such as indium tin oxide (ITO) or indium zinc oxide (IZO). In the first embodiment shown in FIG. 1, each lower electrode 115 extends to an opening 116 (contact hole) provided in the optical adjustment film 114, and each lower electrode 115 is electrically connected to the peripheral portion of the reflector 110 disposed thereunder through the opening 116. In the modified example shown in FIG. 2, each lower electrode 115 is electrically connected to the peripheral portion of the reflector 110 disposed thereunder by a plug 117 penetrating the optical adjustment film 114. The plug 117 may be, for example, a W plug having a barrier metal such as Ti / TiN.

[0021] The organic device 1 may further include an insulating film 118 covering the peripheral portions of each of the plurality of lower electrodes 115 and the optical adjustment film 114 between the plurality of lower electrodes 115. The lower electrode 115 may have a central portion and a peripheral portion surrounding it, and the central portion and the peripheral portion may have different thicknesses, with the central portion being thinner than the peripheral portion. The peripheral portion may be a region of the lower electrode 115 that is covered with the insulating film 118. The lower electrode 115 may have a step along the optical adjustment layer 114. The step of the optical adjustment layer 114 may have a portion that is inclined with respect to the substrate. The insulating film 118 may be, for example, a SiO2 film formed by plasma CVD. The insulating film 118 is arranged to electrically insulate the plurality of lower electrodes 115 from each other.

[0022] An organic functional film 119 may be disposed on the insulating film 118. The organic functional film 119 includes at least an organic light-emitting material layer and may also include, for example, a charge transport layer, a charge blocking layer, etc. The organic functional film 119 may be disposed continuously in the first pixel 201r and the second pixel 202g. Disposed continuously can mean that the organic functional film is connected, that the organic functional film is disposed across the first pixel, or that one organic functional film is shared by the first pixel and the second pixel. The organic functional film 119 may also be disposed continuously in the third pixel 203b in addition to the first pixel and the second pixel. An upper electrode 120 may be disposed on the organic functional film 119. The upper electrode 120 may be made of a transparent material so as to transmit light generated in the organic functional film 119 without blocking it. The upper electrode 120 may be made of a thin film of, for example, gold, platinum, silver, aluminum, chromium, magnesium, or an alloy thereof. A sealing film 121 may be disposed on the upper electrode 120. The sealing film 121 is a film for preventing moisture from penetrating into the semiconductor substrate 101, the organic functional film 119, and the upper electrode 120, and may be composed of, for example, a SiN film formed by plasma CVD. A color filter layer 122 may be disposed on the sealing film 121. The color filter layer 122 may include a color filter 122r for the first pixel 201r, a color filter 122g for the second pixel 201g, and a color filter 123b for the third pixel 201b. Microlenses (not shown) may be provided above or below the color filter layer 122. The microlenses may be provided to improve light-emitting efficiency.

[0023] An electric signal is sent from the MOS transistor formed on the semiconductor substrate 101 to each lower electrode 115, causing the organic functional film 119 to generate light. The light emitted from the organic functional film 119 toward the semiconductor substrate 101 is reflected by the reflective portion 110. The light emitted from the organic functional film 119 toward the upper electrode 120 and the light reflected by the reflective portion 110 resonate and are amplified at wavelengths corresponding to the thicknesses Tr, Tg, and Tb of the optical adjustment film 114 at the center of the reflective portion 110 for each of the pixels 201r, 201g, and 201b. The light amplified in this manner is emitted through the color filters 122r, 122g, and 122b.

[0024] The thicknesses Tr, Tg, and Tb of the optical adjustment film 114 at the center of the reflective portion 110 for each of the pixels 201r, 201g, and 201b are determined in consideration of the light amplification effect. Meanwhile, the step differences ΔTr, ΔTg, and ΔTb can be determined so that the leakage current between pixels is kept within a constant value. For example, the step differences ΔTr, ΔTg, and ΔTb can be determined so that the thicknesses of the optical adjustment film 114 at the peripheral portions of the reflective portion 110 for each of the pixels 201r, 201g, and 201b are equal to each other.

[0025] Here, Tr, Tg, and Tb can be replaced with T1, T2, and T3, and ΔTr, ΔTg, and ΔTb can be replaced with ΔT1, ΔT2, and ΔT3, and it is desirable that T1>T2>T3 and ΔT1<ΔT2<ΔT3 be satisfied. Alternatively, Tr and Tg can be replaced with T1 and T2, and ΔTr and ΔTg can be replaced with ΔT1 and ΔT2, and it is desirable that T1>T2 and ΔT1<ΔT2 be satisfied. Alternatively, Tg and Tb can be replaced with T1 and T2, and ΔTg and ΔTb can be replaced with ΔT1 and ΔT2, and it is desirable that T1>T2 and ΔT1<ΔT2 be satisfied. Furthermore, in this embodiment, the thicknesses Tr, Tg, and Tb of the optical adjustment film 114 at the center of the reflective section 110 for the red, green, and blue light-emitting pixels respectively satisfy the relationship Tr>Tg>Tb, and the step differences ΔTr, ΔTg, and ΔTb satisfy ΔTr<ΔTg<ΔTb. However, the relationship between the sizes depending on the emitted colors is not limited to the above relationship. For example, the following relationship is possible.

[0026] Relationship A: Tr>Tb>Tg, ΔTr<ΔTb<ΔTg Relationship B: Tg>Tr>Tb, ΔTg<ΔTr<ΔTb Relationship C: Tg>Tb>Tr, ΔTg<ΔTb<ΔTr Relationship D: Tb>Tr>Tg, ΔTb<ΔTr<ΔTg Relationship E: Tb>Tg>Tr, ΔTb<ΔTg<ΔTr

[0027] Hereinafter, a manufacturing method of the organic device 1 of the first embodiment will be described with reference to FIGS. 3 and 4. Note that a description of the steps up to the formation of the conductive plug 109 will be omitted. First, in the step shown in FIG. 3(a), an AlCu film (e.g., an Al film with 0.5 (atm %) of Cu added) is formed by, for example, a sputtering method on the second interlayer insulating film 108 on which the conductive plug 109 has been formed. Thereafter, the AlCu film is patterned by a photolithography step and a dry etching step to form a plurality of reflective portions 110. Next, in the step shown in FIG. 3(b), a first film 111a made of, for example, a SiO2 film is formed by, for example, a plasma CVD method. Thereafter, in the step shown in FIG. 3(c), for example, a portion of the first film 111a located above the center of the reflective portion 110 of the second pixel 201g is removed by a photolithography step and a dry etching step to form the first film 111b. Next, in the step shown in Fig. 3(d), a second film 112a made of, for example, an SiO2 film is formed by plasma CVD. Next, in the step shown in Fig. 4(e), portions of the first film 11b and the second film 112a located above the central portion of the reflective portion 110 of the third pixel 201b are opened by photolithography and dry etching. This forms the first film 111 and the second film 112.

[0028] 4(f), a third film 113 made of, for example, an SiO2 film is deposited by plasma CVD, thereby forming an optical adjustment film 114 made of the first film 111, the second film 112, and the third film 113. The optical adjustment film 114 includes a first optical adjustment film 114r for the first pixel 201r, a second optical adjustment film 114g for the second pixel 201g, and a third optical adjustment film 114b for the third pixel 201b. The first optical adjustment film 114r has a thickness Tr and a step difference ΔTr, the second optical adjustment film 114g has a thickness Tg and a step difference ΔTg, and the third optical adjustment film 114b has a thickness Tb and a step difference ΔTb. 3 and 4, the thicknesses of the optical adjustment films 114r, 114g, and 114b at the central portions of the reflective portions 110 for the first pixel 201r, the second pixel 201g, and the third pixel 201b can be easily controlled with high precision. In this case, since the thickness of the optical adjustment film 114 can be controlled with high precision, it is possible to control optical characteristics such as the luminous efficiency and chromaticity of the luminescent pixels with high precision. Alternatively, there is a method for controlling the thicknesses of the optical adjustment films 114r, 114g, and 114b at the central portions of the reflective portions 110 for the first pixel 201r, the second pixel 201g, and the third pixel 201b by controlling the etching time. However, it is difficult to control the thicknesses with high precision using such a method for controlling the thicknesses by controlling the etching time.

[0029] Next, in the step shown in FIG. 4(g), openings 116 (contact holes) are formed in the optical adjustment film 114 by photolithography and dry etching. Then, an electrode film, such as an ITO film or an IZO film, is formed by sputtering, and the electrode film is patterned by photolithography and dry etching to form multiple lower electrodes 115. This manufacturing method allows the edges of the photoresist pattern for forming the openings 116 and the lower electrodes 115 to be positioned in areas where the height difference between the pixels 201r, 201g, and 201b is small (peripheral areas of the pixels). This reduces processing errors in the openings 116 and the lower electrodes 115 between the pixels 201r, 201g, and 201b. In particular, it is preferable to position at least a portion of the end of the lower electrode 115 so that it overlaps the peripheral areas of the reflecting portions 110 of each pixel in a planar view.

[0030] 4(h), a SiO film is formed by, for example, a plasma CVD method so as to cover the peripheral portions of each of the plurality of lower electrodes 115 and the optical adjustment film 114 between the plurality of lower electrodes 115. The SiO film is then patterned by a photolithography process and a dry etching process to form an insulating film 118. The insulating film 118 can also reduce processing errors between the pixels 201r, 201g, and 201b.

[0031] Next, although not shown, for example, an organic functional film 119 and an upper electrode 120 are formed in this order by vacuum deposition using a deposition mask, and then a sealing film 121 is formed by, for example, CVD. Thereafter, a color filter layer 122 can be formed by photolithography. Furthermore, microlenses may be formed above or below the color filter layer to improve light emission efficiency.

[0032] FIG. 5 schematically illustrates the cross-sectional structure of an organic device 1 according to the second embodiment. Details not specifically mentioned in the second embodiment may be consistent with those of the first embodiment. In the second embodiment, instead of the multiple reflective portions 110 of the first embodiment, multiple reflective portions 301 are disposed on the second interlayer insulating film 108. An anti-reflection electrode 302 is disposed on each reflective portion 301 so as to contact the reflective portion 301. Each reflective portion 301 and the anti-reflection electrode 302 are electrically connected. Each reflective portion 301 may be formed, for example, of an AlCu film having a barrier metal such as Ti / TiN. The anti-reflection electrode 302 may be formed, for example, of a layer containing at least a portion of TiN, Ti, W, Co, Ta, or TaN, or may have a laminated structure of these. The thickness of the anti-reflection electrode 302 is preferably approximately 1 to 200 nm. The anti-reflection electrode can be formed by known techniques such as sputtering or vapor deposition.

[0033] An optical adjustment film 306 may be disposed so as to cover the multiple reflective portions 301 and the multiple antireflection electrodes 302. The optical adjustment film 306 may include a portion configured as a stacked film of a first film 303, a second film 304, and a third film 305, a portion configured as a stacked film of the second film 304 and the third film 305, and a portion configured as a single layer film made of the third film 305. The optical adjustment film 306 or the first film 303, the second film 304, and the third film 305 may be configured as, for example, a SiO2 film. Optical adjustment films 306r, 306g, and 306b with different film thicknesses are formed by providing openings in a portion of the interlayer insulating film material and a portion of the antireflection electrode material on the reflective portions 301 of the first pixel 201r, the second pixel 201g, and the third pixel 201b. If the respective film thicknesses are Tr, Tg, and Tb, and the step film thicknesses formed by the openings are ΔTr, ΔTg, and ΔTb, the relationship between the film thickness and the step film thickness is Tr>Tg>Tb, ΔTr<ΔTg<ΔTr. Furthermore, it is preferable that the member constituting the anti-reflection electrode 302 is present in at least a part of the periphery of the reflective portion 301, and it is particularly preferable that it is formed so as to surround the reflective portion 301. The thickness of the reflective portion may be different between the central portion and the peripheral portion, and the thickness of the central portion may be smaller than the peripheral portion.

[0034] A lower electrode 307 is disposed on the optical adjustment film 306. The lower electrode 307 is preferably made of a transparent material, such as indium tin oxide (ITO) or indium zinc oxide (IZO). An opening 308 is provided in the optical adjustment film 306, and the anti-reflection electrode 302 and the lower electrode 307 are electrically connected through the opening 308. If the reflective portion 301 is made of AlCu and the lower electrode 307 is made of a material containing oxygen, direct contact between the reflective portion 301 and the lower electrode 307 may result in the formation of aluminum oxide, which may cause poor electrical conduction. Therefore, electrical connection between the reflective portion 301 and the lower electrode 307 via the anti-reflection electrode 302 made of TiN or other material that does not readily react with oxygen can prevent poor electrical conduction. As in the first embodiment, an insulating film 118, an organic functional film 119, an upper electrode 120, a sealing film 121, and a color filter 122 may be disposed on the lower electrode 307.

[0035] In the second embodiment, the first pixel 201r has an optical adjustment film 306r on the reflective portion 301, and the optical adjustment film 306r is composed of a stacked film of a first film 303, a second film 304, and a third film 305. The optical adjustment film 306r has a portion composed of the stacked film of the first film 303, the second film 304, and the third film 305 in the peripheral portion of the reflective portion 301 for the first pixel 201r. The optical adjustment film 306r also has a portion composed of the stacked film of the first film 303, the second film 304, and the third film 305 in the central portion of the reflective portion 301 for the first pixel 201r. The thickness of the optical adjustment film 306r in the central portion of the reflective portion 301 for the first pixel 201r is Tr. The optical adjustment film 306r of the first pixel 201r has a step ΔTr on its surface (upper surface). Here, the step ΔTr is greater than 0. Furthermore, it is preferable that the step between the upper surface of the central portion of the reflective portion 301 of the first pixel 201r and the upper surface of the anti-reflection electrode 302 be approximately the same as the step ΔTr.

[0036] In the second embodiment, the second pixel 201g has an optical adjustment film 306g. The optical adjustment film 306g has a portion composed of a stacked film of a first film 303, a second film 304, and a third film 305 in the peripheral portion of the reflective portion 301 for the second pixel 201g. The optical adjustment film 306g also has a portion composed of a stacked film of a second film 112 and a third film 113 in the central portion of the reflective portion 301 for the second pixel 201g. The thickness of the optical adjustment film 306g in the central portion of the reflective portion 301 for the second pixel 201g is Tg. The optical adjustment film 306g of the second pixel 201g has a step ΔTg on its surface (upper surface) due to the difference in thickness between the peripheral portion and the central portion and the thickness of the anti-reflection electrode. Here, ΔTg is greater than 0.

[0037] In the second embodiment, the third pixel 201b has an optical adjustment film 306b. The optical adjustment film 306b has a portion configured as a stacked film of a first film 303, a second film 304, and a third film 305 in the peripheral portion of the reflective portion 301 for the third pixel 201b. The optical adjustment film 306b also has a portion configured as a single-layer film made of the third film 305 in the central portion of the reflective portion 301 for the third pixel 201b. The thickness of the optical adjustment film 306b in the central portion of the reflective portion 301 for the third pixel 201b is Tb. The optical adjustment film 306b of the third pixel 201b has a step ΔTb on its surface (upper surface) due to the difference in thickness between the peripheral portion and the central portion and the thickness of the anti-reflection electrode. Here, ΔTb is greater than 0.

[0038] Here, it is preferable that Tr>Tg and ΔTr<ΔTg are satisfied. This means reducing the difference between the thickness of the optical adjustment film 306r in the peripheral portion of the reflective portion 301 for the first pixel 201r and the thickness of the optical adjustment film 306g in the peripheral portion of the reflective portion 301 for the second pixel 201g. This configuration means that it is possible to reduce the difference between the magnitude of the leakage current between the first pixel 201r and other pixels (the second pixel 201g and the third pixel 201b) and the magnitude of the leakage current between the second pixel 201g and other pixels (the first pixel 201r and the third pixel 201b). Therefore, this configuration is advantageous for keeping the leakage current between the first pixel 201r and other pixels and the leakage current between the second pixel 201g and other pixels at constant values, and as a result, is advantageous for keeping the leakage current between pixels at a constant value. Furthermore, such a configuration is advantageous for making the leakage current between the lower electrode 307 and the upper electrode 120 equal between the first pixel 201r and the second pixel 201g, and is effective for suppressing degradation of image quality due to color mixing. In particular, it is preferable that the thickness of the optical adjustment film 306r in the peripheral part of the reflective part 301 for the first pixel 201r is approximately the same as the thickness of at least a part of the optical adjustment film 306g in the peripheral part of the reflective part 301 for the second pixel 201g.

[0039] Alternatively, it is preferable that Tg > Tb and ΔTg < ΔTb are satisfied. This means reducing the difference in thickness between the optical adjustment film 306g in the peripheral portion of the reflective portion 301 for the second pixel 201g and the optical adjustment film 306b in the peripheral portion of the reflective portion 301 for the third pixel 201b. This configuration means that it is possible to reduce the difference in magnitude of the leakage current between the second pixel 201g and other pixels (the first pixel 201r, the third pixel 201b) and the leakage current between the third pixel 201b and other pixels (the first pixel 201r, the second pixel 201g). Therefore, this configuration is advantageous for keeping the leakage current between the second pixel 201g and other pixels and the leakage current between the third pixel 201b and other pixels at constant values, and as a result, is advantageous for keeping the leakage current between pixels at a constant value. Furthermore, such a configuration is advantageous for making the leakage current between the lower electrode 307 and the upper electrode 120 equal between the second pixel 201g and the third pixel 201b, and is effective for suppressing degradation of image quality due to color mixing. In particular, it is preferable that the thickness of the optical adjustment film 306g in the peripheral part of the reflective part 301 for the first pixel 201g is approximately the same as the thickness of at least a part of the optical adjustment film 306b in the peripheral part of the reflective part 301 for the second pixel 201b.

[0040] Furthermore, it is preferable that Tr>Tg>Tb and ΔTr<ΔTg<ΔTb are satisfied. This means that the difference in thickness between the optical adjustment films 306r, 306g, and 306b in the peripheral portions of the reflective portion 110 for the first pixel 201r, the second pixel 201g, and the third pixel 201b is reduced. This configuration reduces the difference in the magnitude of leakage current between the first pixel 201r, the second pixel 201g, and the third pixel 201b. Therefore, this configuration is advantageous for keeping the leakage current between the pixels at a constant value. This configuration is also advantageous for making the leakage current between the lower electrode 307 and the upper electrode 120 equal in the first pixel 201r, the second pixel 201g, and the third pixel 201b, and is effective for suppressing degradation of image quality due to color mixing. In particular, it is preferable that the thicknesses of at least parts of the optical adjustment film 306r, the optical adjustment film 306g, and the optical adjustment film 306b in the peripheral parts of the reflective part 301 for each of the first pixel 201r, the second pixel 201g, and the third pixel 201b are approximately the same. Furthermore, it is preferable that the thicknesses of the optical adjustment film 114r, the optical adjustment film 114g, and the optical adjustment film 114b in the peripheral parts of the reflective part 110 for each of the first pixel 201r, the second pixel 201g, and the third pixel 201b, and at least parts of the optical adjustment film 114r located in the center of the reflective part 110 of the first pixel 201r are approximately the same.

[0041] Furthermore, in this embodiment, the thicknesses Tr, Tg, and Tb of the optical adjustment film 306 at the center of the reflective section 301 for each of the red, green, and blue light-emitting pixels are in the relationship Tr>Tg>Tb, and the step differences ΔTr, ΔTg, and ΔTb are in the relationship ΔTr<ΔTg<ΔTb. However, the size relationships depending on the emitted color are not limited to the above relationships. For example, the following relationships are possible:

[0042] Relationship A: Tr>Tb>Tg, ΔTr<ΔTb<ΔTg Relationship B: Tg>Tr>Tb, ΔTg<ΔTr<ΔTb Relationship C: Tg>Tb>Tr, ΔTg<ΔTb<ΔTr Relationship D: Tb>Tr>Tg, ΔTb<ΔTr<ΔTg Relationship E: Tb>Tg>Tr, ΔTb<ΔTg<ΔTr

[0043] A method for manufacturing the organic device 1 according to the second embodiment will be described below with reference to FIGS. 6 and 7. The description of the steps up to the formation of the conductive plug 109 will be omitted. First, in the step shown in FIG. 6(a), an AlCu film (e.g., an Al film containing 0.5 atm % Cu) and a TiN film (anti-reflective film) are formed by, for example, a sputtering method on the second interlayer insulating film 108 on which the conductive plug 109 has been formed. Then, the stacked film of the AlCu film and the TiN film is patterned by a photolithography step and a dry etching step to form a plurality of stacked bodies each including a reflective portion 301 and an anti-reflective electrode 302a. At this time, in the exposure step of the photolithography step, the anti-reflective electrode 302a suppresses reflected waves from the AlCu film, thereby enabling the formation of fine reflective portions 301.

[0044] Next, in the process shown in FIG. 6(b), the antireflection electrode 302a in the center of the reflective portion 301 of each first pixel 201r is removed by photolithography and dry etching, thereby forming multiple antireflection electrodes 302b. Next, in the process shown in FIG. 6(c), a first film 303a made of, for example, a SiO2 film is formed by plasma CVD. Next, in the process shown in FIG. 6(d), portions of the first film 303a and the antireflection electrode 302a located above the center of the reflective portion 301 of the second pixel 201g are removed by photolithography and dry etching, thereby forming the antireflection electrode 302c and the first film 303b.

[0045] Next, in the step shown in FIG. 6(e), a second film 304a made of, for example, a SiO2 film is deposited by plasma CVD. Next, in the step shown in FIG. 7(f), portions of the anti-reflection electrode 302, the first film 303b, and the second film 304a located above the center of the reflective portion 301 of the third pixel 201b are removed by photolithography and dry etching. This results in the anti-reflection electrode 302, the first film 303, and the second film 304. Next, in the step shown in FIG. 7(g), a third film 305 made of, for example, a SiO2 film is deposited by plasma CVD, thereby forming an optical adjustment film 306 made of the first film 303, the second film 304, and the third film 305.

[0046] The optical adjustment film 306 includes a first optical adjustment film 306r for the first pixel 201r, a second optical adjustment film 306g for the second pixel 201g, and a third optical adjustment film 306b for the third pixel 201b. The first optical adjustment film 306r has a thickness Tr and a step ΔTr, the second optical adjustment film 306g has a thickness Tg and a step ΔTg, and the third optical adjustment film 306b has a thickness Tb and a step ΔTb. According to the method shown in FIGS. 6 and 7, the thicknesses of the optical adjustment films 306r, 306g, and 306b at the centers of the reflective portions 110 for the first pixel 201r, the second pixel 201g, and the third pixel 201b, respectively, can be easily controlled with high precision. In this case, since the thickness of the optical adjustment film 114 can be controlled with high precision, optical characteristics such as the luminous efficiency and chromaticity of the luminescent pixels can be controlled with high precision. Alternatively, there is a method for controlling the thickness of the optical adjustment films 306r, 306g, and 306b at the center of the reflective section 110 for the first pixel 201r, the second pixel 201g, and the third pixel 201b, respectively, by adjusting the etching time. However, with such a method for controlling the thickness by adjusting the etching time, it is difficult to control the thickness with high precision.

[0047] Next, in the step shown in FIG. 7(h), openings 308 (contact holes) are formed in the optical adjustment film 114 by photolithography and dry etching. Then, an electrode film, such as an ITO film or an IZO film, is formed by sputtering, and the electrode film is patterned by photolithography and dry etching to form multiple lower electrodes 307. This manufacturing method allows the edges of the photoresist pattern for forming the openings 308 and the lower electrodes 307 to be positioned in areas where the height difference between the pixels 201r, 201g, and 201b is small (peripheral areas of the pixels). This reduces processing errors in the openings 308 and the lower electrodes 307 between the pixels 201r, 201g, and 201b. In particular, it is preferable to position at least a portion of the edge of the lower electrode 307 so that it overlaps with the anti-reflection electrode 302 in the peripheral area of the reflective portion 110 of each pixel in a planar view.

[0048] Next, in the step shown in FIG. 7(i), a SiO film is formed, for example, by plasma CVD, to cover the peripheries of each of the lower electrodes 307 and the optical adjustment film 306 between the lower electrodes 307. The SiO film is then patterned using photolithography and dry etching to form the insulating film 118. The insulating film 118 can also reduce processing errors between the pixels 201r, 201g, and 201b. Next, although not shown, an organic functional film 119 and an upper electrode 120 are sequentially formed by vacuum deposition using a deposition mask. Then, for example, a sealing film 121 is formed by CVD, and then a color filter layer 122 is formed by photolithography. Microlenses may also be formed above or below the color filter layer.

[0049] FIG. 8 is a schematic plan view of an organic device according to the third embodiment. FIG. 9(a) is a schematic cross-sectional view taken along line A-A' in FIG. 8. FIG. 9(b) is a schematic cross-sectional view taken along line B-B' in FIG. 8. Details not mentioned in the third embodiment may conform to the first or second embodiment. In the third embodiment, a third wiring layer including a reflective film 402 and a wiring pattern 401 is disposed on the second interlayer insulating film 108. The first pixel 201r, the second pixel 201b, and the third pixel 201b each include a lower electrode 403. Each lower electrode 403 may have, for example, a hexagonal shape, but may also have another polygonal shape or a shape other than a polygon. The third wiring layer, on which the reflective film 402 and the wiring pattern 401 are disposed, is a wiring layer for electrically connecting the lower electrode 403 to a wiring layer (not shown) below it. The reflective film 402 and the wiring pattern 401 are electrically insulated from each other. As shown in FIG. 9(b), the reflective film 402 is a conductor provided in common to a plurality of pixels including the first pixel 201r, the second pixel 201b, and the third pixel 201b. The reflective film 402 is not divided between pixels but extends across a plurality of pixels in the pixel array region of the organic device. Even in this configuration, the reflective film 402 can be considered to include a plurality of reflective portions corresponding to the plurality of lower electrodes 403, respectively. Furthermore, the central portion of the reflective portion for each pixel can be considered to be the portion overlapping the central portion of the lower electrode 403 arranged thereon, and the peripheral portion of the reflective portion for each pixel can be considered to be the portion overlapping the peripheral portion of the lower electrode 403 arranged thereon.

[0050] An optical adjustment film 404 according to the first or second embodiment is disposed on the reflective film 402 and the wiring pattern 401. A lower electrode 403 may be disposed on the optical adjustment film 404. The lower electrode 403 and the wiring pattern 401 of the third wiring layer may be electrically connected through an opening 405 provided in the optical adjustment film 404.

[0051] In the third embodiment, the potential of the reflective film 402 can be set arbitrarily. In particular, it is preferable that the potential of the reflective film 402 is set so that the potential difference between the upper electrode and the reflective film 402 is lower than the light emission threshold voltage of the organic light emitting element (the threshold voltage at which the organic functional film operates). When the reflective film 402 and the wiring pattern 401 of a certain pixel are electrically connected due to manufacturing variations, the potential of the wiring pattern 401 becomes the same as the potential of the reflective film 402. Because the wiring pattern 401 and the lower electrode 403 are at the same potential, when the potential difference between the reflective film 402 and the upper electrode is set to be equal to or lower than the light emission threshold voltage of the organic light emitting element, the pixel where the reflective film 402 and the lower electrode 403 are electrically connected does not emit light, and therefore no major pixel defect occurs.

[0052] FIG. 10 shows the planar arrangement of the third wiring layer of the fourth embodiment. FIG. 11(a) schematically illustrates the cross-sectional structure along line D-D' in FIG. 10. FIG. 11(b) schematically illustrates the cross-sectional structure along line E-E' in FIG. 10. Details not mentioned in the fourth embodiment may conform to the first to third embodiments. In the fourth embodiment, a third wiring layer including a reflective film 504 and a wiring pattern 503 is disposed on the second interlayer insulating film 108. The first pixel 201r, the second pixel 201b, and the third pixel 201b each include a lower electrode 509. Each lower electrode 509 may have, for example, a hexagonal shape, but may also have other polygonal shapes or shapes other than polygonal. The pixel arrangement can be any arrangement, such as a stripe arrangement, a delta arrangement, a Bayer arrangement, or a Pentile arrangement. The delta arrangement is particularly preferable because it is easy to arrange circular microlenses. The third wiring layer, on which the reflective film 504 and the wiring pattern 503 are arranged, is a wiring layer for electrically connecting the lower electrode 509 to the wiring layer below it. The reflective film 504 and the wiring pattern 503 are electrically insulated by removing the conductive material 502 on the reflective material 501 in the third wiring layer. As shown in FIG. 11(a), the wiring pattern 503 is configured by laminating the conductive material 502 on the reflective material 501. The reflective material 501 may be reflective and conductive, and is preferably a highly reflective material such as Al, Ag, or Pt. Furthermore, it may be an alloy containing these materials or may have a laminated structure. An alloy containing Al is particularly preferred. The conductive material 502 may be conductive, and is preferably a material that is stable in contact with the reflective material 501 and the lower electrode 509. Furthermore, the conductive material 502 preferably has low reflectivity, and preferably contains TiN or Ti. The thickness of the conductive material 502 is preferably approximately 1 to 100 nm.

[0053] As shown in FIG. 11(b), the reflective film 504 is a conductor provided in common to multiple pixels, including the first pixel 201r, the second pixel 201b, and the third pixel 201b, and is composed of a reflective material 501 and a conductive material 502. The reflective film 504 is not divided between pixels but extends across multiple pixels in the pixel array region of the organic device. Even in this configuration, the reflective film 504 can be considered to include multiple reflective portions corresponding to the multiple lower electrodes 403. Furthermore, the central portion of the reflective portion for each pixel can be considered to be the portion overlapping the central portion of the lower electrode 403 arranged thereon in a planar view, and the peripheral portion of the reflective portion for each pixel can be considered to be the portion overlapping the peripheral portion of the lower electrode 403 arranged thereon in a planar view. In the reflective film 504, the conductive material 502 is removed from the reflective portion, exposing the reflective material 501. Furthermore, the conductive material 502 is provided in at least a portion of the peripheral portion of the reflective portion. In particular, it is preferable that the conductive material 502 is provided in the peripheral portion of the reflective portion so as to surround the central portion of the reflective portion. Furthermore, it is preferable that the conductive material 502 is also provided between the first pixel 201r, the second pixel 201b, and the third pixel 201b. By using a material with a lower reflectance than the reflective material 501 for the conductive material 502 provided in the peripheral portion of the reflective portion, it is possible to reduce stray light and improve contrast.

[0054] An optical adjustment film 508 conforming to the optical adjustment film of any of the first to third embodiments is disposed on the reflective film 504 and the wiring pattern 503. A plurality of lower electrodes 509 may be disposed on the optical adjustment film 508. The organic device 1 may further include an insulating film 510 that covers the peripheral portions of each of the plurality of lower electrodes 509 and the optical adjustment film 508 between the plurality of lower electrodes 509. The insulating film 510 corresponds to the insulating film 118 in the first embodiment. The lower electrode 509 and the wiring pattern 503 of the third wiring layer may be electrically connected through an opening 511 provided in the optical adjustment film 508. Because the reflective film 504 and the plurality of wiring patterns 503 disposed on the third wiring layer are electrically insulated, the plurality of wiring patterns and the corresponding plurality of lower electrodes 509 can be electrically connected.

[0055] In the fourth embodiment, the potential of the reflective film 504 can be set arbitrarily. In particular, it is preferable that the potential difference between the reflective film 504 and the upper electrode be set to a value equal to or lower than the light emission threshold voltage of the organic light-emitting element. When the reflective film 504 and the wiring pattern 503 of a certain pixel are electrically connected due to manufacturing variations, the potential of the wiring pattern 503 becomes the same as the potential of the reflective film 504. When the potential difference between the reflective film 504 and the upper electrode is set to a value equal to or lower than the light emission threshold voltage of the organic light-emitting element, the pixel electrically connected to the reflective film 504 does not emit light, and therefore no major pixel defect occurs.

[0056] FIG. 12 is a schematic cross-sectional view of an organic device according to a fifth embodiment. Details not mentioned in the fifth embodiment may conform to those of the first to fourth embodiments. In the fifth embodiment, a gap 520 is provided between a reflective film 504 and a wiring pattern 503. By providing the gap 520, it is possible to improve the insulation between the reflective film 504 and the wiring pattern 503, which are formed in the same layer. In particular, when the reflective film 504 and the wiring pattern 503 have different potentials, improving the insulation between the reflective film 504 and the wiring pattern 503 can suppress the generation of leakage current between the reflective film 504 and the wiring pattern 503. In particular, it is preferable that the gap 520 be provided so as to surround the periphery of the wiring pattern. It is preferable that the gap 520 be filled with a vacuum or an inert gas. Furthermore, when the reflective film is provided so as to be electrically isolated for each pixel, it is preferable that the gap 520 be provided between the reflective film for each pixel. Furthermore, the gap 520 can be formed by any method. For example, it is possible to form the void 520 by etching the optical adjustment film 508 in a groove shape. As another method, it is possible to form the void 502 by forming the reflective film 504 or the wiring pattern 503 of the third wiring layer by etching, and then forming the optical adjustment film 508 by a film formation method with relatively isotropic growth. Furthermore, it is preferable that the upper part of the void 502 be covered with an insulating film, and it is more preferable that it be covered with the optical adjustment film 508.

[0057] Modifications of the above embodiments will be described below. An organic EL element (organic light-emitting element) has a structure in which an anode, an organic compound layer (organic functional film), and a cathode are arranged on a substrate. A protective layer, a color filter, etc. may be provided on the cathode. When a color filter is provided, a planarizing layer may be provided between the protective layer and the color filter. The planarizing layer can be made of acrylic resin, etc.

[0058] Examples of the substrate include quartz, glass, silicon wafer, resin, and metal. Furthermore, the substrate may be provided with switching elements such as transistors and wiring, and an insulating layer thereon. The insulating layer may be made of any material, as long as it can form contact holes to ensure electrical continuity between the anode 2 and the wiring and can ensure insulation from unconnected wiring. For example, resins such as polyimide, silicon oxide, silicon nitride, etc. can be used.

[0059] A pair of electrodes can be used. The pair of electrodes may be an anode and a cathode. When an electric field is applied in the direction in which the organic light-emitting element emits light, the electrode with the higher potential is the anode, and the other is the cathode. It can also be said that the electrode that supplies holes to the light-emitting layer is the anode, and the electrode that supplies electrons is the cathode. In this case, the lower electrode may be an anode and the upper electrode may be a cathode, or the lower electrode may be a cathode and the upper electrode may be an anode. The lower electrode and the upper electrode may be translucent, and may also be reflective or absorbing.

[0060] The material for the anode should have as high a work function as possible. For example, simple metals such as gold, platinum, silver, copper, nickel, palladium, cobalt, selenium, vanadium, and tungsten, mixtures containing these metals, and alloys combining these metals can be used. Metal oxides such as tin oxide, zinc oxide, indium oxide, indium tin oxide (ITO), and zinc indium oxide can also be used. Furthermore, conductive polymers such as polyaniline, polypyrrole, and polythiophene can also be used.

[0061] These electrode materials may be used alone or in combination of two or more. The anode may be composed of one layer or multiple layers.

[0062] When the electrode is used as a reflective film, for example, chromium, aluminum, silver, titanium, tungsten, molybdenum, or an alloy or laminate thereof can be used. When used as a transparent electrode, a transparent conductive oxide layer such as indium tin oxide (ITO) or indium zinc oxide can be used, but is not limited to these. Photolithography can be used to form the electrode.

[0063] On the other hand, materials with a low work function are preferred for the cathode. Examples include alkali metals such as lithium, alkaline earth metals such as calcium, and metals such as aluminum, titanium, manganese, silver, lead, and chromium, as well as mixtures containing these metals. Alternatively, alloys combining these metals can be used. For example, magnesium-silver, aluminum-lithium, aluminum-magnesium, silver-copper, and zinc-silver can be used. Metal oxides such as indium tin oxide (ITO) can also be used. These electrode materials can be used alone or in combination. The cathode can have either a single-layer or multi-layer structure. Among these, silver is preferred, and a silver alloy is even more preferred to suppress silver aggregation. The alloy ratio is not critical as long as silver aggregation can be suppressed. For example, a 1:1 ratio is acceptable.

[0064] The method for forming the cathode is not particularly limited, but may be a vapor deposition heating method, a direct current or alternating current sputtering method, etc. The direct current or alternating current sputtering method is more preferable because it provides good film coverage and is easy to reduce resistance.

[0065] A protective layer may be provided on the upper electrode. For example, by adhering glass with a moisture absorbent on the cathode, it is possible to prevent water and other substances from penetrating the organic compound layer, thereby preventing display defects. In another embodiment, a passivation film such as silicon nitride may be provided on the cathode to prevent water and other substances from penetrating the organic EL layer. For example, after forming the cathode, the device may be transported to another chamber without breaking the vacuum, and a 2 μm-thick silicon nitride film may be formed by CVD to serve as a protective layer. A protective layer may also be provided using atomic layer deposition (ALD) after the CVD film formation.

[0066] A color filter may be provided on the protective layer. For example, a color filter taking into consideration the size of the organic light-emitting element may be provided on a separate substrate and then bonded to the substrate on which the organic light-emitting element is provided, or a color filter may be patterned on the protective layer described above using photolithography technology. The color filter may be made of a polymer. Furthermore, microlenses may be formed on or below the color filter layer.

[0067] A planarizing layer may be provided between the color filter and the protective layer. The planarizing layer may be made of an organic compound, and may be either a low molecular weight or a high molecular weight, but is preferably a high molecular weight.

[0068] The planarizing layer may be provided above or below the color filter, and may be made of the same or different materials, such as polyvinyl carbazole resin, polycarbonate resin, polyester resin, ABS resin, acrylic resin, polyimide resin, phenol resin, epoxy resin, silicone resin, and urea resin.

[0069] A counter substrate may be provided on the planarization layer. The counter substrate is called a counter substrate because it is provided at a position corresponding to the aforementioned substrate. The counter substrate may be made of the same material as the aforementioned substrate.

[0070] The organic compound layers (hole injection layer, hole transport layer, electron blocking layer, light emitting layer, hole blocking layer, electron transport layer, electron injection layer, etc.) constituting the organic light emitting device according to one embodiment of the present invention are formed by the method shown below.

[0071] The organic compound layer constituting the organic light-emitting device according to one embodiment of the present invention can be formed by dry processes such as vacuum deposition, ionization deposition, sputtering, plasma, etc. Alternatively to the dry process, a wet process can be used in which the compound is dissolved in an appropriate solvent and a layer is formed by a known coating method (for example, spin coating, dipping, casting, LB method, inkjet method, etc.).

[0072] Here, when a layer is formed by a vacuum deposition method or a solution coating method, crystallization is unlikely to occur and the layer has excellent stability over time. When a film is formed by a coating method, the film can be formed by combining with an appropriate binder resin.

[0073] Examples of the binder resin include polyvinyl carbazole resin, polycarbonate resin, polyester resin, ABS resin, acrylic resin, polyimide resin, phenol resin, epoxy resin, silicone resin, urea resin, etc. The above are examples, and the binder resin is not limited to these.

[0074] These binder resins may be used singly or in combination as homopolymers or copolymers, and may further contain known additives such as plasticizers, antioxidants, and ultraviolet absorbers, if necessary.

[0075] The following describes exemplary uses of organic devices. Organic devices can be used as components of display devices and lighting devices. Other uses include exposure light sources for electrophotographic image forming devices, backlights for liquid crystal display devices, and light-emitting devices with a white light source and a color filter.

[0076] The display device may be an image information processing device that has an image input unit that inputs image information from an area CCD, a linear CCD, a memory card, etc., has an information processing unit that processes the input information, and displays the input image on the display unit.

[0077] The display unit of the imaging device or inkjet printer may have a touch panel function. The driving method of this touch panel function may be an infrared method, a capacitance method, a resistive film method, or an electromagnetic induction method, and is not particularly limited. The display device may also be used in the display unit of a multifunction printer.

[0078] Next, the display device according to this embodiment will be described with reference to the drawings.

[0079] FIG. 13 is a schematic diagram illustrating an example of a display device according to this embodiment. The display device 1000 may include a touch panel 1003, a display panel 1005, a frame 1006, a circuit board 1007, and a battery 1008 between an upper cover 1001 and a lower cover 1009. The touch panel 1003 and the display panel 1005 are connected by flexible printed circuits FPCs 1002 and 1004. Transistors are printed on the circuit board 1007. The battery 1008 may not be provided if the display device is not a portable device, and may be provided in a different position even if the display device is a portable device. The display panel 1005 may be formed of an organic device 1.

[0080] The display device according to this embodiment may be used as a display unit of a photoelectric conversion device having an optical unit with multiple lenses and an image sensor that receives light that has passed through the optical unit. The photoelectric conversion device may have a display unit that displays information acquired by the image sensor. Alternatively, information may be acquired using information acquired by the image sensor, and the display unit may display information different from that information. The display unit may be a display unit exposed to the outside of the photoelectric conversion device, or a display unit disposed within the viewfinder. The photoelectric conversion device may be a digital camera or a digital video camera.

[0081] 14(a) is a schematic diagram showing an example of a photoelectric conversion device according to this embodiment. The photoelectric conversion device 1100 may include a viewfinder 1101, a rear display 1102, an operation unit 1103, and a housing 1104. The viewfinder 1101 may include a display device according to this embodiment. In this case, the display device may display not only an image to be captured, but also environmental information, imaging instructions, and the like. The environmental information may include the intensity of external light, the direction of external light, the speed at which the subject is moving, the possibility that the subject will be blocked by an obstruction, and the like.

[0082] Since the optimum timing for capturing an image is very short, it is better to display information as soon as possible. Therefore, it is preferable to use a display device using the organic light-emitting element of the present invention. This is because the organic light-emitting element has a fast response speed. A display device using an organic light-emitting element can be used more preferably than a liquid crystal display device, which requires a high display speed.

[0083] The photoelectric conversion device 1100 has an optical section (not shown). The optical section has multiple lenses, which form an image on an image sensor housed in a housing 1104. The focus of the multiple lenses can be adjusted by adjusting their relative positions. This operation can also be performed automatically.

[0084] The display device according to this embodiment may have color filters having red, green, and blue colors, which may be arranged in a delta arrangement.

[0085] The display device according to the present embodiment may be used as a display unit of a mobile terminal. In this case, the display device may have both a display function and an operation function. Examples of the mobile terminal include a mobile phone such as a smartphone, a tablet, and a head-mounted display.

[0086] FIG. 14(b) is a schematic diagram showing another example of an electronic device according to this embodiment. The electronic device 1200 has a display unit 1201, an operation unit 1202, and a housing 1203. The housing 1203 may have a circuit, a printed circuit board having the circuit, a battery, and a communication unit. The operation unit 1202 may be a button or a touch panel type reaction unit. The operation unit may be a biometric recognition unit that recognizes a fingerprint to perform operations such as unlocking. An electronic device having a communication unit can also be called a communication device.

[0087] FIG. 15 is a schematic diagram illustrating an example of a display device according to this embodiment. FIG. 15(a) illustrates a display device such as a television monitor or a PC monitor. The display device 1300 has a frame 1301 and a display unit 1302. The display unit 1302 may include a light-emitting device according to this embodiment. The display device 1300 has a base 1303 that supports the frame 1301 and the display unit 1302. The base 1303 is not limited to the form shown in FIG. 15(a). The lower side of the frame 1301 may also serve as the base. The frame 1301 and the display unit 1302 may be curved. The radius of curvature may be 5000 mm or more and 6000 mm or less.

[0088] FIG. 15(b) is a schematic diagram illustrating another example of a display device according to this embodiment. The display device 1310 in FIG. 15(b) is configured to be bendable, and is a so-called foldable display device. The display device 1310 has a first display unit 1311, a second display unit 1312, a housing 1313, and a bending point 1314. The first display unit 1311 and the second display unit 1312 may include a light-emitting device according to this embodiment. The first display unit 1311 and the second display unit 1312 may be a single, seamless display unit. The first display unit 1311 and the second display unit 1312 can be separated by the bending point. The first display unit 1311 and the second display unit 1312 may each display different images, or the first and second display units may display a single image.

[0089] FIG. 16(a) is a schematic diagram showing an example of a lighting device according to this embodiment. The lighting device 1400 may include a housing 1401, a light source 1402, a circuit board 1403, an optical film 1404, and a light diffusion unit 1405. The light source may include an organic light-emitting element according to this embodiment. The optical filter may be a filter that improves the color rendering of the light source. The light diffusion unit can effectively diffuse light from the light source, such as for illumination, and deliver the light over a wide area. The optical filter and the light diffusion unit may be provided on the light output side of the lighting. If necessary, a cover may be provided on the outermost part.

[0090] The lighting device is, for example, a device for illuminating a room. The lighting device may emit white, daylight white, or any other color from blue to red. It may have a dimming circuit for dimming these colors. The lighting device may have the organic light-emitting element of the present invention and a power supply circuit connected thereto. The power supply circuit is a circuit for converting AC voltage to DC voltage. Furthermore, white has a color temperature of 4200K, and daylight white has a color temperature of 5000K. The lighting device may have a color filter.

[0091] The lighting device according to this embodiment may also include a heat dissipation unit, which dissipates heat from within the device to the outside, and may be made of a material such as a metal with a high specific heat capacity or liquid silicon.

[0092] 16(b) is a schematic diagram of an automobile, which is an example of a moving body according to this embodiment. The automobile has tail lamps, which are an example of lighting fixtures. The automobile 1500 has tail lamps 1501, and may be configured to turn on the tail lamps when braking or the like is performed.

[0093] A tail lamp 1501 may include an organic light-emitting element according to this embodiment. The tail lamp may include a protective member for protecting the organic EL element. The protective member may be made of any material as long as it has a certain degree of strength and is transparent, but it is preferably made of polycarbonate or the like. Polycarbonate may be mixed with a furandicarboxylic acid derivative, an acrylonitrile derivative, or the like.

[0094] An automobile 1500 may have a body 1503 and a window 1502 attached thereto. The window may be a transparent display as long as it is not a window for checking the front and rear of the automobile. The transparent display may have an organic light-emitting element according to this embodiment. In this case, constituent materials of the electrodes and the like of the organic light-emitting element are made of transparent materials.

[0095] The moving body according to this embodiment may be a ship, an aircraft, a drone, or the like. The moving body may have a body and a lighting device provided on the body. The lighting device may emit light to indicate the position of the body. The lighting device has the organic light-emitting element according to this embodiment.

[0096] As described above, by using a device using the organic light-emitting element according to this embodiment, it is possible to provide a stable display with good image quality even over a long period of time.

[0097] 17 shows an application example of a display device according to an embodiment of the present invention. The display device according to an embodiment of the present invention can be applied to information display devices such as a camera viewfinder, a head-mounted display, and smart glasses.

[0098] 17(a) is a schematic diagram of an example used as a viewfinder for an imaging device such as a camera. Display light 7 and infrared light 8 are emitted from the display device 1, and the display light and infrared light pass through the same optical member 22 to reach the user's eyeball 6. The infrared light reflected by the user's eyeball 6 is converted into electrical information by an imaging device 23 having an imaging element, and the line of sight is detected based on that information. Instead of providing an imaging device, an imaging element may be provided on the insulating layer of the display device 1, and the display device may be used as a display imaging device.

[0099] 17(b) shows an example of an imaging device such as a camera. The imaging device 24 has a viewfinder 25, a display 26, an operation unit 27, and a housing 28. The display device in FIG. 17(a) is provided in the viewfinder 25.

[0100] 17(a) shows an example in which the display light 7 and the infrared light 8 pass through the same optical member 22, but separate optical members may be provided for the display light and the infrared light. Also, instead of providing an imaging device, an imaging element may be provided on the substrate of the display device 1 and used as a display imaging device. The detected line-of-sight information can be used to control the display device and various devices connected to the display device, such as for camera focus control, display image resolution control, and as a substitute for button operation.

[0101] A display device according to an embodiment of the present invention may have an imaging device having a light receiving element, and may control the image displayed on the display device based on information about the user's line of sight from the imaging device.

[0102] Specifically, the display device determines a first field of view area where the user gazes and a second field of view area other than the first field of view area based on the line-of-sight information. The first field of view area and the second field of view area may be determined by a control device of the display device, or may be determined by an external control device and received. In the display area of the display device, the display resolution of the first field of view area may be controlled to be higher than the display resolution of the second field of view area. In other words, the resolution of the second field of view area may be lower than that of the first field of view area.

[0103] The display area includes a first display area and a second display area different from the first display area, and a high-priority area is determined from the first display area and the second display area based on line-of-sight information. The first field of view area and the second field of view area may be determined by a control device of the display device, or may be determined by an external control device and received. The resolution of the high-priority area may be controlled to be higher than the resolution of areas other than the high-priority area. In other words, the resolution of an area with a relatively low priority may be lowered.

[0104] Note that AI may be used to determine the first field of view area and areas with high priority. The AI may be a model configured to estimate the angle of gaze and the distance to an object in the line of sight from an image of the eyeball, using as training data an image of the eyeball and the direction in which the eyeball in the image was actually looking. The AI program may be included in the display device, the imaging device, or an external device. If included in an external device, it is transmitted to the display device via communication.

[0105] When display control is performed based on visual recognition detection, the smart glasses can be preferably applied to smart glasses that further include an imaging device for capturing images of the outside world. The smart glasses can display captured external information in real time.

[0106] Alternatively, a first imaging device may have a light receiving element for receiving infrared light, and a second imaging device for capturing images of the outside world, which has a light receiving element different from that of the first imaging device. The imaging resolution of the second imaging device may be controlled based on the line-of-sight information of the user of the first imaging device. By lowering the imaging resolution of other areas compared to a prioritized area, the amount of information can be reduced. This reduces power consumption and display delay. The prioritized area may be the first imaging area, and an area with a lower priority than the first imaging area may be the second imaging area.

[0107] FIG. 17(c) is a schematic diagram showing an example of smart glasses. An imaging and display device 29, typified by smart glasses, has a control unit 30, a transparent display unit 31, and an external imaging unit (not shown). When applied to smart glasses, both the display device and the external imaging device can be controlled based on detected gaze information, thereby reducing power consumption and display delays. For example, by lowering the display and imaging resolution of areas of the display area other than the area the user is gazing at, the amount of information in both imaging and display can be reduced, thereby reducing power consumption and display delays.

[0108] As described above, according to one embodiment of the present invention, by reducing the visible light emitted by the infrared light-emitting element from leaking into adjacent pixels, it is possible to provide a display device in which degradation of display quality is reduced even when the device is miniaturized.

[0109] The invention is not limited to the above-described embodiments, and various changes and modifications can be made without departing from the spirit and scope of the invention. Accordingly, the following claims are appended to apprise the public of the scope of the invention. [Explanation of symbols]

[0110] 1: organic device, 110: reflective portion (reflective film), 301: reflective electrode (reflective film), 402: reflective film, 115: lower electrode, 307: lower electrode, 403: lower electrode, 114: optical adjustment film, 306: optical adjustment film, 404: optical adjustment film, 120: upper electrode, 201r: first pixel, 201g: second pixel, 201b: third pixel

Claims

1. An organic device comprising: a reflective film disposed on a substrate; a first insulating film covering the reflective film; a plurality of lower electrodes disposed on the first insulating film; a second insulating film covering peripheral portions of the plurality of lower electrodes and the first insulating film between the plurality of lower electrodes; an organic functional film covering the plurality of lower electrodes and the second insulating film; and an upper electrode disposed on the organic functional film, the reflective film includes a first reflective portion for a first pixel and a second reflective portion for a second pixel; When the thickness of the first insulating film disposed on the central part of the first reflecting portion is T1, the thickness of the first insulating film disposed on the central part of the second reflecting portion is T2, the step of the surface of the first insulating film on the first reflecting portion is ΔT1, and the step of the surface of the first insulating film on the second reflecting portion is ΔT2, T1>T2, ΔT1<ΔT2 are satisfied, An organic device characterized by:

2. the first insulating film includes a first film and a second film, the first film and the second film are disposed in the central portion of the first reflecting portion, and the first film is not disposed in the central portion of the second reflecting portion, but the second film is disposed therein; 2. The organic device according to claim 1 .

3. In a region where both the first film and the second film are present, the second film is disposed on the first film.

3. The organic device according to claim 2.

4. the reflective film further includes a third reflective portion for a third pixel, When the thickness of the first insulating film disposed on the central portion of the third reflecting portion is T3 and the step of the surface of the first insulating film on the third reflecting portion is ΔT3, T1>T2>T3, ΔT1<ΔT2<ΔT3 are satisfied, 2. The organic device according to claim 1 .

5. the first insulating film includes a first film, a second film, and a third film, the first film, the second film, and the third film are arranged in the central part of the first reflecting section, the first film is not arranged in the central part of the second reflecting section, but the second film and the third film are arranged, and the first film and the second film are not arranged in the central part of the third reflecting section, but the third film is arranged.

5. The organic device according to claim 4.

6. the reflective film includes a plurality of reflective portions including the first reflective portion and the second reflective portion, each of the plurality of reflective portions being disposed below a corresponding one of the plurality of lower electrodes; each of the plurality of lower electrodes and a corresponding one of the plurality of reflecting portions are electrically connected to each other; 6. The organic device according to claim 1, wherein the organic layer is a polycrystalline silicon layer.

7. each of the plurality of lower electrodes extends to an opening provided in the first insulating film, and each of the plurality of lower electrodes is electrically connected to a peripheral portion of a corresponding one of the plurality of reflecting portions at the opening; 7. The organic device according to claim 6.

8. each of the plurality of lower electrodes is electrically connected to a peripheral portion of a corresponding one of the plurality of reflecting portions by a first conductive plug penetrating the first insulating film; 7. The organic device according to claim 6.

9. a conductive layer is provided on the reflective film in a peripheral portion of the reflective section, and each of the plurality of lower electrodes is electrically connected to the conductive layer; 9. The organic device according to claim 6, wherein the organic layer is a silicon dioxide layer.

10. the conductive layer is made of a material having a lower reflectivity than the reflective film; 10. The organic device according to claim 9.

11. the reflective film is made of a conductor provided in common to the plurality of lower electrodes and is electrically insulated from the plurality of lower electrodes; 6. The organic device according to claim 1, wherein the organic layer is a polycrystalline silicon layer.

12. the plurality of lower electrodes are electrically connected to a wiring pattern provided adjacent to the reflective film, and the reflective film and the wiring pattern are insulated from each other.

12. The organic device of claim 11.

13. the wiring pattern is made of a conductive material having a reflectivity lower than that of the reflective film; 13. The organic device of claim 12.

14. the conductive material is formed on at least a portion of the reflective film in the peripheral portion of the reflective portion; 14. The organic device of claim 13.

15. the potential of the reflective film is set so that the potential difference between the upper electrode and the reflective film is lower than a threshold voltage at which the organic functional film operates; 15. The organic device according to claim 11, wherein the organic layer is a silicon dioxide layer.

16. There is an air gap between at least the first reflecting portion and the second reflecting portion.

11. The organic device according to claim 6, wherein the organic layer is a silicon dioxide layer.

17. a gap is provided between at least the reflective film and the wiring pattern; 15. The organic device according to claim 12, wherein the organic layer is a silicon dioxide layer.

18. forming a reflective film on a substrate; forming a first insulating film so as to cover the reflective film; forming a plurality of lower electrodes on the first insulating film; forming a second insulating film so as to cover the peripheral portions of each of the plurality of lower electrodes and the first insulating film between the plurality of lower electrodes; forming an organic functional film so as to cover the plurality of lower electrodes and the second insulating film; forming an upper electrode on the organic functional film; the reflective film includes a first reflective portion for a first pixel and a second reflective portion for a second pixel; In the step of forming the first insulating film, when the thickness of the first insulating film disposed on the central part of the first reflecting portion is T1, the thickness of the first insulating film disposed on the central part of the second reflecting portion is T2, a step of the surface of the first insulating film between the peripheral part and the central part of the first reflecting portion is ΔT1, and a step of the surface of the first insulating film between the peripheral part and the central part of the second reflecting portion is ΔT2, T1>T2, ΔT1<ΔT2 are satisfied, The first insulating film is formed as follows: A method for manufacturing an organic device comprising the steps of:

19. In the step of forming the first insulating film, the first insulating film is formed so that the first insulating film includes a first film and a second film, the first film and the second film are disposed in the central portion of the first reflecting portion, and the first film is not disposed in the central portion of the second reflecting portion, but the second film is disposed therein.

19. The method for manufacturing an organic device according to claim 18.

20. the reflective film further includes a third reflective portion for a third pixel, When the thickness of the first insulating film disposed on the central portion of the third reflecting portion is T3 and the step of the surface of the first insulating film between the peripheral portion and the central portion of the third reflecting portion is ΔT3, T1>T2>T3, ΔT1<ΔT2<ΔT3 are satisfied, 19. The method for manufacturing an organic device according to claim 18.

21. In the step of forming the first insulating film, the first insulating film is formed so that the first insulating film includes a first film, a second film, and a third film, the first film, the second film, and the third film are arranged in the central part of the first reflecting section, the first film is not arranged in the central part of the second reflecting section, but the second film and the third film are arranged, and the first film and the second film are not arranged in the central part of the third reflecting section, but the third film is arranged.

21. The method for manufacturing an organic device according to claim 20.

22. the reflective film includes a plurality of reflective portions including the first reflective portion and the second reflective portion, In the step of forming the reflective film, a plurality of reflective portions are formed so that one reflective portion is disposed under each of the plurality of lower electrodes; each of the plurality of lower electrodes and a corresponding one of the plurality of reflecting portions are electrically connected to each other; 22. The method for manufacturing an organic device according to claim 18.

23. each of the plurality of lower electrodes is electrically connected to a peripheral portion of a corresponding one of the plurality of reflecting portions through an opening provided in the first insulating film; 23. The method for manufacturing an organic device according to claim 22.

24. each of the plurality of lower electrodes is electrically connected to a peripheral portion of a corresponding one of the plurality of reflecting portions by a plug penetrating the first insulating film; 23. The method for manufacturing an organic device according to claim 22.

25. configured as a display device, 18. An organic device according to any one of claims 1 to 17.

26. An imaging device; and the organic device according to any one of claims 1 to 17 configured as a display device; The display image of the display device is controlled based on the user's line of sight information provided from the imaging device. A display and imaging device characterized by:

27. an optical unit having a plurality of lenses, an image pickup element that receives light that has passed through the optical unit, and a display unit that displays an image picked up by the image pickup element; The display unit includes the organic device according to claim 1 . A photoelectric conversion device characterized by:

28. 18. An electronic device comprising: a display unit including the organic device according to claim 1; a housing in which the display unit is provided; and a communication unit provided in the housing for communicating with an external device.

29. 18. A lighting device comprising: a light source including the organic device according to claim 1; and a light diffusion section or an optical film that transmits light emitted from the light source.

30. A moving body comprising: a lighting fixture having the organic device according to claim 1; and a body on which the lighting fixture is provided.

Images