Semiconductor light-emitting device, display device, lighting device, and method for manufacturing semiconductor light-emitting device

Abstract

To provide a semiconductor light-emitting device, a display device and a lighting device each comprising the semiconductor light-emitting device, and a method for manufacturing the semiconductor light-emitting device, in which the light extraction efficiency of light emitted from a light-emitting element can be improved.SOLUTION: A semiconductor light-emitting device 1 comprises a light-emitting element sealed in a sealing member 4. The sealing member 4 contains a sealing resin 5 and surface-modified metal oxide particles 6. The sealing member 4 does not contain phosphor particles. The scattering at the wavelength of 450 nm is 40% or more when the sealing member 4 is a cured body with a thickness of 1 mm.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a semiconductor light-emitting device, a display device and a lighting fixture including the semiconductor light-emitting device, and a method for manufacturing the semiconductor light-emitting device. [Background technology]

[0002] Light-emitting diodes (LEDs) are widely used as light sources, offering advantages such as compact size, long life, and low-voltage operation. The LED chip (light-emitting element) in an LED package is generally sealed with a sealing material containing resin to prevent contact with deterioration factors present in the external environment, such as oxygen and moisture. Therefore, the light emitted from the LED chip passes through the sealing material and is emitted toward the outside. Therefore, in order to increase the luminous flux emitted from the LED package, it is important to efficiently extract the light emitted from the LED chip to the outside of the LED package.

[0003] Patent Document 1 proposes a composition containing surface-modified inorganic oxide particles and a silicone resin component and having a specific viscosity as an encapsulating material for improving the extraction efficiency of light emitted from an LED chip, and it has been confirmed that this composition improves the luminous efficiency of a light-emitting device containing a phosphor. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Publication No. 2020-002305 Summary of the Invention [Problem to be solved by the invention]

[0005] In order to improve the extraction efficiency of light emitted from an LED package, various studies have been conducted on encapsulating materials that contain inorganic fillers with a diffusing effect, phosphor particles, and resin components. However, there has been insufficient research into using inorganic fillers to improve the light extraction efficiency of LED packages that do not contain phosphor particles.

[0006] The present invention has been made in consideration of the above circumstances, and aims to provide a semiconductor light-emitting device that can increase the extraction efficiency of light emitted from a light-emitting element, a display device and lighting fixture that include a semiconductor light-emitting device, and a method for manufacturing a semiconductor light-emitting device. [Means for solving the problem]

[0007] The present invention has the following aspects. [1] A semiconductor light-emitting device having a light-emitting element sealed in a sealing member, the sealing member includes a sealing resin and surface-modified metal oxide particles; the sealing member does not contain phosphor particles, The semiconductor light emitting device has a scattering component of 40% or more at a wavelength of 450 nm when the sealing member is cured to a thickness of 1 mm. [2] The semiconductor light-emitting device according to [1], wherein the refractive index of the metal oxide particles contained in the surface-modified metal oxide particles is 1.7 or more. [3] The semiconductor light-emitting device according to [1] or [2], wherein the average primary particle size of the metal oxide particles contained in the surface-modified metal oxide particles is 3 nm or more and 20 nm or less. [4] The semiconductor light-emitting device according to any one of [1] to [3], wherein the surface modifier contained in the surface-modified metal oxide particles is at least one of a silane compound and a silicone compound. [5] A display device comprising the semiconductor light emitting device according to any one of [1] to [4]. [6] A lighting fixture comprising the semiconductor light emitting device according to any one of [1] to [4]. [7] A method for manufacturing a semiconductor light-emitting device according to any one of [1] to [4], a step of applying a sealing material containing surface-modified metal oxide particles and a sealing resin onto a light-emitting element, curing the sealing material to form a sealing member, and sealing the light-emitting element with the sealing member; No solvent is added during the mixing process of the sealing material, The method for producing a semiconductor light-emitting device, wherein the total content of the surface-modified metal oxide particles and the sealing resin in the sealing material is 99 parts by mass or more. [Effects of the Invention]

[0008] According to the present invention, it is possible to provide a semiconductor light-emitting device that can increase the extraction efficiency of light emitted from a light-emitting element, a display device and lighting fixture that include a semiconductor light-emitting device, and a method for manufacturing a semiconductor light-emitting device. [Brief explanation of the drawings]

[0009] [Figure 1] 1 is a schematic cross-sectional view showing an example of a semiconductor light emitting device according to an embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0010] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A semiconductor light emitting device, a lighting fixture, a display device, and a method for manufacturing a semiconductor light emitting device according to an embodiment of the present invention will be described. It should be noted that the present embodiment is specifically described to provide a better understanding of the gist of the invention, and does not limit the present invention unless otherwise specified. Amounts, numbers, types, ratios, configurations, positions, orders, ratios, etc. may be omitted, added, substituted, or changed within the scope of the gist of the present invention.

[0011] (Semiconductor light-emitting device) FIG. 1 is a schematic cross-sectional view showing an example of a semiconductor light emitting device according to this embodiment. The size of each component in the drawings has been appropriately exaggerated for ease of explanation and does not represent the actual dimensions or ratios between components. In this specification and drawings, components having substantially the same functional configuration are designated by the same reference numerals, and redundant explanations will be omitted. As shown in FIG. 1, the semiconductor light-emitting device 1 of this embodiment includes a substrate 2, a light-emitting element (LED chip) 3, and a sealing member 4. The substrate 2 has a recess 21. The light-emitting element 3 is disposed on a bottom surface 21a of the recess 21 of the substrate 2. The light-emitting element 3 is covered in the recess 21 by the sealing member 4 and is sealed in the sealing member 4. The sealing member 4 contains a sealing resin 5 and surface-modified metal oxide particles 6. The sealing member 4 does not contain phosphor particles. In the semiconductor light-emitting device 1 of this embodiment, when the sealing member 4 is a cured product having a thickness of 1 mm, the scattering component at a wavelength of 450 nm is 40% or more.

[0012] In this embodiment, the "scattered portion" refers to the value obtained by subtracting the linear transmittance (%) from the integrated transmittance (%). The integrated transmittance refers to the transmittance measured using an integrating sphere in a spectrophotometer. The linear transmittance refers to the transmittance measured using a spectrophotometer without using an integrating sphere. In this embodiment, the sealing member 4 not containing phosphor particles means that the sealing member 4 does not contain phosphor particles and does not include a layer containing phosphor particles that is separate from the sealing member 4. In other words, this means that the semiconductor light emitting device 1 does not contain phosphor particles anywhere.

[0013] Conventionally, semiconductor light-emitting devices can emit white light by sealing a blue light-emitting element with a sealing member containing phosphor particles. Such sealing members containing phosphor particles are also used with an inorganic scattering agent. A sealing member containing both an inorganic scattering agent and phosphor particles increases the amount of blue light irradiated per phosphor particle due to the scattering effect of the inorganic scattering agent, allowing the amount of expensive phosphor particles contained in the sealing member to be reduced. The present inventors have conducted extensive research into ways to enhance the scattering effect of inorganic scattering agents on phosphor particles, and as a result have found that in color LEDs such as blue semiconductor light-emitting devices that do not contain phosphor particles in the sealing member, the light extraction efficiency can be improved by using surface-modified metal oxide particles to adjust the amount of scattering at a wavelength of 450 nm in the sealing member.

[0014] The sealing member 4 does not contain phosphor particles, but has surface-modified metal oxide particles 6 dispersed therein. Typically, when a sealing member contains surface-modified metal oxide particles, the transparency of the sealing member decreases, thereby reducing the light extraction efficiency. In semiconductor light-emitting devices containing phosphor particles, the surface-modified metal oxide particles can scatter light emitted from the light-emitting element, thereby reducing the amount of expensive phosphor particles. Therefore, in semiconductor light-emitting devices that do not contain phosphor particles, there is no need to scatter light emitted from the light-emitting element. Therefore, the present inventors believed that in semiconductor light-emitting devices that do not contain phosphor particles, the inclusion of surface-modified metal oxide particles, which reduces the transparency of the sealing member, would reduce the light extraction efficiency, and therefore surface-modified metal oxide particles were not necessary. However, the present inventors have discovered the surprising effect of improving the light extraction efficiency in color LEDs such as blue light-emitting devices that do not contain phosphor particles by adjusting the scattering component of the sealing member at a wavelength of 450 nm using surface-modified metal oxide particles.

[0015] The details of this mechanism are thought to be as follows. When the sealing member 4 does not contain surface-modified metal oxide particles 6, the light emitted from the light-emitting element 3 spreads throughout the recess 21 to fill the recess 21, and the light that strikes the wall surface 21b of the recess 21 is absorbed by the wall surface 21b of the recess 21 or is reflected by the wall surface 21b of the recess 21 and emitted from the upper surface 2a side of the substrate 2. At this time, the light is absorbed by the wall surface 21b of the recess 21, resulting in a decrease in the light extraction efficiency. However, by incorporating surface-treated metal oxide particles 6 into the sealing member 4 so as to achieve a predetermined light scattering, diffusion of light in the planar direction of the substrate 2 is suppressed. As a result, the light emitted from the light-emitting element 3 is suppressed from being absorbed by the wall surface 21b of the recess 21, the loss of light emitted from the light-emitting element 3 is suppressed, and more light is emitted from the upper surface 2a side of the substrate 2. Therefore, the semiconductor light-emitting device 1 of this embodiment can improve the light extraction efficiency in a semiconductor light-emitting device that does not contain phosphor particles.

[0016] (Surface modified metal oxide particles) The surface-modified metal oxide particles 6 in this embodiment are metal oxide particles whose surfaces have been modified with a surface modifying material, and are not particularly limited as long as they can be mixed with the above-mentioned sealing resin and can improve the brightness of the semiconductor light-emitting device 1. The term "metal oxide particles surface-modified with a surface-modifying material" refers to a case where the surface-modifying material contacts or bonds with the metal oxide particles through an interaction or reaction between them. Examples of contact include physical adsorption. Examples of bonding include ionic bonding, hydrogen bonding, and covalent bonding.

[0017] In this embodiment, the content of the surface-modified metal oxide particles 6 in the sealing member 4 is not particularly limited as long as the scattering amount can be adjusted to a desired value, and may be, for example, 0.01% by mass or more and 10% by mass or less, 0.1% by mass or more and 9% by mass or less, 1% by mass or more and 8% by mass or less, or 3% by mass or more and 8% by mass or less.

[0018] The surface-modified metal oxide particles 6 in this embodiment preferably have a particle diameter D50 (hereinafter sometimes abbreviated as "D50") when the cumulative volume percentage of the dry particle size distribution is 50% of 0.1 μm or more and 1.30 μm or less, more preferably 0.3 μm or more and 1.29 μm or less, even more preferably 0.5 μm or more and 1.28 μm or less, and particularly preferably 0.8 μm or more and 1.27 μm or less. When D50 is in the above range, excessive aggregation of the surface-modified metal oxide particles 6 can be suppressed in the sealing member 4. As a result, the light emitted from the light-emitting element 3 can be scattered to such an extent that the scattered portion at a wavelength of 450 nm is 40% or more.

[0019] The D50 refers to the value at which the cumulative volume percentage is 50% when the volume particle size distribution of the surface-modified metal oxide particles 6 is measured in a dry state using a laser diffraction particle size analyzer. A specific example of the laser diffraction particle size analyzer is a laser diffraction particle size analyzer (model: Mastersizer 3000, manufactured by Malvern).

[0020] The dispersed particle diameter of the surface-modified metal oxide particles 6 in the sealing member 4 may be, for example, 0.05 μm to 2 μm, 0.07 μm to 1.5 μm, 0.09 μm to 1.3 μm, or 0.1 μm to 1 μm. Here, the dispersed particle diameter of the surface-modified metal oxide particles 6 means the secondary particle diameter (aggregated particle diameter) when the particles are aggregated together. The dispersed particle diameter of the surface-modified metal oxide particles 6 in the sealing member 4 can be measured by observing a sample obtained by cutting the cured product into thin pieces under an electron microscope. However, because it is difficult to observe all of the surface-modified metal oxide particles 6 in the sealing member 4, it is difficult to uniquely define the particle diameter of the surface-modified metal oxide particles 6 in the sealing member 4. Furthermore, even if the primary particle diameter is approximately the same, the light transmittance will differ if the degree of aggregation between particles differs. Therefore, it is difficult to accurately measure the dispersed particle diameter of the surface-modified metal oxide particles 6 in the sealing member 4. Therefore, it is difficult to identify the characteristics of the sealing member 4 of this embodiment based on the dispersed particle diameter of the surface-modified metal oxide particles 6.

[0021] The D50 of the surface-modified metal oxide particles 6 is measured with a dry particle size distribution analyzer, and is therefore the average particle size observed in a state that includes aggregations of the surface-modified metal oxide particles 6. Therefore, when the surface-modified metal oxide particles 6 in the sealing member 4 are observed with an electron microscope, surface-modified metal oxide particles having a dispersed particle size smaller than the D50 are observed.

[0022] Here, we simulated the effect of adding particles with a refractive index of 1.77 as the surface-modified metal oxide particles 6 to an LED package to see how the brightness of the LED package improved depending on the particle size. As a result, the simulation confirmed that the brightness of the LED package improved when the particle diameter was 2 μm or less. Note that the particles with a refractive index of 1.77 were assumed to be surface-modified aluminum oxide particles.

[0023] The surface-modified metal oxide particles 6 preferably have a hydroxyl group treatment rate on the surface of the metal oxide particles of 98.1 mass % or more. In this specification, the "hydroxyl group treatment rate" refers to a numerical value indicating the proportion of hydroxyl groups that have been surface-modified with a surface modifying material, i.e., hydroxyl groups that have been bonded to a silane compound, among all hydroxyl groups present on the surface of metal oxide particles. The "hydroxyl group treatment rate" is measured using a red dye that absorbs light at a wavelength of around 545 nm and is represented by the following chemical formula (1):

[0024] [ka]

[0025] The red pigment of the above chemical formula (1) can be produced by the following method. A mixed solution is prepared by mixing 1 mmol of 2,2'-dihydroxyazobenzene, 1 mmol of diphenyltin(IV) oxide as a metal source, and 30 mL of acetone. Next, this mixture is stirred at 70°C for 3 hours to carry out a dehydration reaction, and diphenyltin oxide is coordinated with 2,2'-dihydroxyazobenzene. The mixture after the dehydration reaction is filtered, the filtrate is recovered, and the solvent is distilled off from the recovered filtrate to obtain the red pigment represented by the above chemical formula (1).

[0026] The red dye represented by the above chemical formula (1) selectively adsorbs to hydroxyl groups present on the surface of metal oxide particles and does not react with hydroxyl groups of water, alcohol, etc. Therefore, the amount of hydroxyl groups contained in metal oxide particles and surface-modified metal oxide particles can be qualitatively and quantitatively evaluated without being affected by moisture. That is, the degree of hydrophobicity of the surface of metal oxide particles can be determined by examining the amount of red dye adsorbed to metal oxide particles before surface modification and the amount of red dye adsorbed to surface-modified metal oxide particles. In other words, the higher the treatment rate of hydroxyl groups on the surface of metal oxide particles, the more hydrophobic the hydroxyl groups present on the surface of the metal oxide particles have been surface-modified and made hydrophobic.

[0027] Specifically, the hydroxyl group treatment rate (%) on the surface of the metal oxide particles with the red dye can be measured by the following method. 250 nmol (0.12 mg) of the red pigment represented by the above chemical formula (1) was dissolved in toluene to make 5 mL, and 5 × 10 -5 Solution C1 for mol / L evaluation is obtained. The absorbance C2 of solution C1 at a wavelength of 545 nm is measured.

[0028] x g of metal oxide particles before surface modification is added to the above-mentioned solution C1 for evaluation, and the mixture is stirred and mixed at 60°C for 4 hours to prepare a mixed solution. x is approximately 4 × 10 -3 The metal oxide particles are removed from this mixture by centrifugation to obtain a mixture A1 for evaluation. The absorbance A2 of this mixture A1 at a wavelength of 545 nm is measured. Add y g of the surface-modified metal oxide particles to be measured to the evaluation solution C1, and stir and mix at 60°C for 4 hours to prepare a mixed solution. y is approximately 4 × 10 -3 The surface-modified metal oxide particles are removed from this mixture by centrifugation to obtain a mixture B1 for evaluation. The absorbance B2 of this mixture B1 at a wavelength of 545 nm is measured.

[0029] From the following formula (1), the adsorption amount (mol / m) of the red dye onto the metal oxide particles before surface modification is calculated. 2 ) is calculated. Adsorption amount A3=((A2-C2) / C2)×250×10 -9 (mol) / x(g) (1) From the following formula (2), the adsorption amount (mol / m 2 ) is calculated. Adsorption amount B3 = ((B2 - C2) / C2) × 250 × 10 -9 (mol) / y(g) (2) In the above formulas (1) and (2), a decrease in absorbance means that the dye is adsorbed, so the amount of adsorption of the red dye is calculated based on the idea that the rate of decrease in absorbance can be converted to the rate of dye adsorption.

[0030] The hydroxyl group treatment rate on the surface of the metal oxide particles can be calculated by the following formula (3). Hydroxyl group treatment rate (%) = 100 - (B3 / A3 × 100) (3)

[0031] (metal oxide particles) The metal oxide particles in this embodiment scatter the light emitted from the light emitting element 3 in the sealing member 4 . The metal oxide particles are not particularly limited as long as they can scatter light emitted from the light-emitting element 3, and may be, for example, metal oxide particles with a refractive index of 1.3 or more, 1.7 or more, or 2.0 or more. If the refractive index of the metal oxide particles is too high, it may be difficult to adjust the amount of scattering. Therefore, the upper limit of the refractive index of the metal oxide particles is preferably 3.0 or less, and more preferably 2.5 or less. From the viewpoint of adjusting the amount of scattering of the sealing member 4, the refractive index of the metal oxide particles in this embodiment is preferably 1.7 or more and 2.2 or less, and more preferably 1.7 or more and 2.0 or less.

[0032] The refractive index of metal oxide particles may be measured using theoretical values listed in various handbooks or han- dbooks or values measured using a refractometer or spectroscopic ellipsometer. For example, the refractive index of aluminum oxide is approximately 1.8, and the refractive index of zirconium oxide is approximately 2.1. Furthermore, it is preferable that the refractive index of the surface-modified metal oxide particles be the same as that before surface modification. However, if the refractive index of the silane compound used is low or if the amount of surface modification with the silane compound is large, the refractive index may be lower than that of the metal oxide particles before surface modification.

[0033] The average primary particle diameter of the metal oxide particles can be selected arbitrarily, but is preferably 3 nm to 200 nm, more preferably 5 nm to 170 nm, and even more preferably 10 nm to 100 nm. The average primary particle diameter of the metal oxide particles may be 5 nm to 20 nm, 5 nm to 25 nm, 50 nm to 120 nm, or 50 nm to 150 nm, as needed. Having the average primary particle diameter of the metal oxide particles within the above range is preferable because it facilitates control of the scattering characteristics of the sealing member 4 at a wavelength of 450 nm.

[0034] The average primary particle diameter of metal oxide particles can be measured by any method. For example, it can be measured by observation with a transmission electron microscope. For example, a predetermined number of metal oxide particles, for example, 100 particles, are selected from a transmission electron microscope image using a transmission electron microscope. The longest straight line segment (maximum major axis) of each of these metal oxide particles is then measured, and the arithmetic average of these measurements is calculated to determine the average primary particle diameter of the metal oxide particles.

[0035] Here, when metal oxide particles are aggregated together, the aggregate particle size of the aggregates is not measured, but the maximum major axis of a predetermined number of metal oxide particles (primary particles) constituting the aggregates is measured and used as the average primary particle size.

[0036] Examples of metal oxide particles in this embodiment include silicon oxide particles, zirconium oxide particles, aluminum oxide particles, titanium oxide particles, zinc oxide particles, iron oxide particles, copper oxide particles, tin oxide particles, cerium oxide particles, tantalum oxide particles, niobium oxide particles, tungsten oxide particles, europium oxide particles, yttrium oxide particles, molybdenum oxide particles, indium oxide particles, antimony oxide particles, germanium oxide particles, lead oxide particles, bismuth oxide particles, and hafnium oxide particles, as well as potassium titanate particles, barium titanate particles, strontium titanate particles, potassium niobate particles, and lithium niobate particles. At least one selected from the group consisting of particles, calcium tungstate particles, yttria-stabilized zirconia particles, alumina-stabilized zirconia particles, calcia-stabilized zirconia particles, magnesia-stabilized zirconia particles, scandia-stabilized zirconia particles, hafnia-stabilized zirconia particles, ytterbia-stabilized zirconia particles, ceria-stabilized zirconia particles, indium-stabilized zirconia particles, strontium-stabilized zirconia particles, samarium oxide-stabilized zirconia particles, gadolinium oxide-stabilized zirconia particles, antimony-doped tin oxide particles, and indium-doped tin oxide particles is preferably used. Among the above, from the viewpoint of improving transparency and compatibility (affinity) with the encapsulating resin (resin component), the metal oxide particles preferably include at least one selected from the group consisting of zirconium oxide particles, aluminum oxide particles, and titanium oxide particles, and more preferably at least one of zirconium oxide particles and aluminum oxide particles is used. Aluminum oxide particles are even more preferably used because they allow for easy adjustment of the scattering component.

[0037] (Surface modification material) The surface modifying material in this embodiment is not particularly limited as long as it can modify the surfaces of the metal oxide particles and enable the metal oxide particles to be dispersed in the sealing member 4 . As such a surface modification material, it is preferable to use a silane compound or a silicone compound represented by the following general formula (2). R 1 Si(OR2 )3···(2) (R 1 is an alkyl group having 1 to 18 carbon atoms, a fluoroalkyl group, or a phenyl group, R 2 represents an alkyl group having 1 to 4 carbon atoms.

[0038] Specifically, examples of silane compounds used for the surface treatment include methyltrimethoxysilane, methyltriethoxysilane, methyltrippropoxysilane, methyltributoxysilane, ethyltrimethoxysilane, ethyltriethoxysilane, ethyltrippropoxysilane, ethyltributoxysilane, n-propyltrimethoxysilane, n-propyltriethoxysilane, n-propyltrippropoxysilane, n-propyltributoxysilane, isopropyltrimethoxysilane, isopropyltriethoxysilane, and isopropyltriethoxysilane. Examples of suitable silanes include n-octyltrimethoxysilane, n-octyltriethoxysilane (triethoxycaprylylsilane), n-octadecyltrimethoxysilane, trifluoropropyltrimethoxysilane, perfluorooctyltriethoxysilane, tridecafluorooctyltriethoxysilane, and vinyltrimethoxysilane.

[0039] Among these silane compounds, methyltrimethoxysilane, methyltriethoxysilane, methyltrippropoxysilane, methyltributoxysilane, ethyltrimethoxysilane, ethyltriethoxysilane, ethyltrippropoxysilane, ethyltributoxysilane, n-propyltrimethoxysilane, n-propyltriethoxysilane, n-propyltrippropoxysilane, n-propyltributoxysilane, isopropyltrimethoxysilane, isopropyltriethoxysilane, isopropyltrippropoxysilane, isopropyltributoxysilane, n-octyltrimethoxysilane, and n-octyltriethoxysilane are preferred, with n-propyltriethoxysilane and octyltriethoxysilane being more preferred. When using a highly heat-resistant methyl-based silicone resin, n-propyltriethoxysilane is even more preferred.

[0040] These silane compounds may be used alone or in combination of two or more. From the viewpoint of reducing the cost of the light-emitting device, a simpler configuration is preferable, and it is preferred to use only one silane compound.

[0041] The content of the silane compound relative to the metal oxide particles may be adjusted taking into consideration the compatibility with the sealing resin described below. To avoid a decrease in the refractive index of the surface-modified metal oxide particles, the content of the silane compound is preferably low. For example, the content of the silane compound relative to 100 parts by mass of the metal oxide particles is preferably 10 parts by mass to 40 parts by mass, more preferably 11% by mass to 28% by mass, even more preferably 12% by mass to 27% by mass, and even more preferably 15% by mass to 25% by mass.

[0042] The surface-modified metal oxide particles in this embodiment may be surface-modified with a surface-modifying material other than a silane compound or a silicone compound, as long as the object of the present invention is not impaired. As a surface modification material other than a silane compound or a silicone compound, for example, a fatty acid containing a carbon-carbon unsaturated bond can be contained. Note that a silane compound and a silicone compound may be used in combination. Silicone compounds have a relatively large molecular weight and contribute to improving affinity with the sealing resin described below. By using a silane coupling agent and a silicone compound in combination, the dispersion stability of metal oxide particles in the sealing member is further improved. On the other hand, from the viewpoint of adjusting the amount of scattering at a wavelength of 450 nm and reducing the cost of the semiconductor light-emitting device, it is preferable that the surface-modified metal oxide particles of the present embodiment are surface-modified only with the silane compound of the present embodiment. In particular, surface-modified metal oxide particles are preferred that are surface-treated with 10 to 25 parts by mass of one type of alkylalkoxysilane compound per 100 parts by mass of metal oxide particles. The alkylalkoxysilane compound preferably has an alkyl group with 1 to 10 carbon atoms, and more preferably 2 to 9 carbon atoms. Such a simple configuration and the use of surface-treated metal oxide particles that have been subjected to a surface treatment make it possible to mix the surface-treated metal oxide particles with the sealing resin without using a solvent.

[0043] (silicone compounds) The silicone compound can be arbitrarily selected, and examples thereof include alkoxy group-containing phenyl silicone, dimethyl silicone, methylphenyl silicone, methylhydrogen silicone, methylphenylhydrogen silicone, diphenylhydrogen silicone, alkoxy-terminated phenyl silicone, alkoxy-terminated methylphenyl silicone, alkoxy group-containing methylphenyl silicone, alkoxy group-containing dimethyl silicone, alkoxy-terminated trimethyl-terminated (methyl group-terminated) dimethyl silicone, and alkoxy group-containing phenyl silicone, etc. These silicone compounds may be used alone or in combination of two or more. The silicone compound may be a monomer, an oligomer, or a resin (polymer). It is preferable to use a monomer or an oligomer because they are easy to modify the surface.

[0044] Among the above, from the viewpoint of ease of reaction and high hydrophobicity, preferred silicone compounds include alkoxy group-containing phenyl silicone, dimethyl silicone, methylphenyl silicone, alkoxy-terminated phenyl silicone, alkoxy-terminated methylphenyl silicone, alkoxy group-containing methylphenyl silicone, alkoxy group-containing dimethyl silicone, alkoxy-terminated trimethyl-terminated (methyl group-terminated) dimethyl silicone, and alkoxy group-containing phenyl silicone. At least one compound selected from the group consisting of these compounds may be included. More preferably, the silicone compound includes at least one compound selected from the group consisting of methoxy group-containing phenyl silicone, dimethyl silicone, and methoxy group-containing dimethyl silicone. It is preferable to use a silicone compound having a functional group ratio close to that of the sealing resin.

[0045] The content of the silicone compound can be selected arbitrarily and is not particularly limited. For example, the content of the silicone compound relative to 100 parts by mass of the metal oxide particles is preferably 5 parts by mass or more and 500 parts by mass or less, more preferably 10 parts by mass or more and 400 parts by mass or less, and even more preferably 10 parts by mass or more and 300 parts by mass or less. If necessary, the content of the silicone compound may be 5 parts by mass or more and 200 parts by mass or less, or 10 parts by mass or more and 150 parts by mass or less. This allows a sufficient amount of silicone compound to adhere to the surface of the metal oxide particles, improving the dispersion stability of the metal oxide particles and improving their dispersibility in the encapsulating resin. Furthermore, the amount of free silicone compound can be reduced, thereby suppressing undesired aggregation of the metal oxide particles in the encapsulating resin.

[0046] (Sealing resin) The sealing resin 5 is the main component of the sealing member 4 in this embodiment. In this embodiment, a sealing material containing the sealing resin 5 and surface-treated metal oxide particles 6 is cured to form the sealing member 4, and the light-emitting element 3 is sealed with the sealing member 4. As a result, deterioration factors from the external environment, such as moisture and oxygen, are prevented from reaching the light-emitting element 3. In this embodiment, the cured sealing resin 5 is basically transparent, and can transmit light emitted from the light-emitting element 3.

[0047] The content of the sealing resin 5 in the sealing member 4 is not particularly limited as long as it can seal the light emitting element 3, and can be the remainder of other components. The content of the sealing resin 5 in the total mass (100 mass%) of the sealing member 4 may be, for example, 90 mass% or more and 99.99 mass% or less, 91 mass% or more and 99.9 mass% or less, 92 mass% or more and 99 mass% or less, or 93 mass% or more and 98 mass% or less.

[0048] Such sealing resin 5 is not particularly limited as long as it can be used as a sealing material. As the sealing resin 5, for example, resins such as silicone resins and epoxy resins may be used alone or in combination of two or more. As the silicone resin, a phenyl-based silicone resin or a methyl-based silicone resin may be used. From the viewpoint of durability, a methyl-based silicone resin is particularly preferred.

[0049] The above-mentioned methyl silicone resin may refer to, for example, a main skeleton having a siloxane bond in which silicon and oxygen are alternately bonded, and most of the functional groups bonded to Si atoms, for example, 60% or more, preferably 80% or more, are methyl groups.However, the above-mentioned methyl silicone resin is not limited to this example. As the methyl-based silicone resin, for example, dimethyl silicone resin, methyl phenyl silicone resin, etc. can be used.

[0050] The content of the methyl-based silicone resin in the total mass (100% by mass) of the sealing resin 5 may be adjusted according to the desired properties and is not particularly limited. For example, it may be 100% by mass, or 20% to 80% by mass, 30% to 70% by mass, or 40% to 60% by mass. Increasing the content of the methyl-based silicone resin improves the durability of the sealing member 4.

[0051] The structure of the sealing resin 5 in this embodiment may be a two-dimensional chain structure, a three-dimensional network structure, or a cage structure. The sealing resin 5 may be in a cured polymer state when used as the sealing member 4. In the sealing material, the sealing resin 5 may be in a pre-cured state, i.e., a precursor. Therefore, the sealing resin present in the sealing material may be, for example, a monomer, an oligomer, or a polymer.

[0052] The sealing resin 5 may be of an addition reaction type, a condensation reaction type, or a radical polymerization reaction type. The viscosity of the sealing resin at 25°C measured in accordance with JIS Z 8803:2011 is, for example, preferably 10 mPa·s or more and 100,000 mPa·s or less, more preferably 100 mPa·s or more and 10,000 mPa·s or less, and even more preferably 1,000 mPa·s or more and 7,000 mPa·s or less.

[0053] The thickness and shape of the sealing member 4 can be adjusted appropriately depending on the desired application and properties, and are not particularly limited.

[0054] (light-emitting element) Examples of the light-emitting element 3 include a light-emitting diode (LED) and an organic light-emitting diode (OLED). The sealing member 4 of this embodiment is particularly suitable for sealing a light-emitting diode. The semiconductor light-emitting device 1 of this embodiment is preferably a semiconductor light-emitting device using a blue LED chip, a red LED chip, and a green LED chip.

[0055] According to the semiconductor light-emitting device 1 of this embodiment, the sealing member 4 contains surface-modified metal oxide particles 5, but does not contain phosphor particles, and the scattering component at a wavelength of 450 nm is 40% or more, so that the extraction efficiency of light emitted from the light-emitting element 3 is excellent.

[0056] (Method of manufacturing a semiconductor light emitting device) A method for manufacturing a semiconductor light-emitting device according to one embodiment of the present invention is a method for manufacturing the semiconductor light-emitting device 1 of the present embodiment described above, and includes the steps of applying a sealing material containing surface-modified metal oxide particles 6 and a sealing resin 5 onto a light-emitting element 3, curing the sealing material to form a sealing member 4, and sealing the light-emitting element 3 with the sealing member 4. In the method for manufacturing a semiconductor light emitting device of this embodiment, no solvent is added in the process of mixing the sealing material. The total content of the surface-modified metal oxide particles 6 and the sealing resin 5 in the sealing material is 99 parts by mass or more.

[0057] The method for sealing the light emitting element 3 with the sealing member 4 obtained by curing the sealing material is not particularly limited, and the light emitting element 3 can be sealed in the same manner as with conventional sealing members. For example, the sealing material of this embodiment can be applied onto the light emitting element 3 using a dispenser or the like, and then the sealing material can be cured. Examples of the curing method include heat curing, electron beam curing, etc. More specifically, the sealing resin 5 in the sealing material of this embodiment is cured by an addition reaction or a polymerization reaction to obtain the sealing member 4.

[0058] (Method of manufacturing surface-modified metal oxide particles) The surface-modified metal oxide particles 6 are obtained by surface-modifying the metal oxide particles with the surface-modifying material. In this embodiment, a case where the silane compound is used as the surface-modifying material will be described. The silane compound may be hydrolyzed. The surface modification method may be a dry method or a wet method. From the viewpoint of reducing the cost of the semiconductor light-emitting device, it is preferable to perform the surface modification by a dry method, which has low manufacturing costs. In this embodiment, the "dry method" means that the surface treatment is performed in a state where the total amount of solvent, including the solvent contained in the hydrolyzed liquid, is present in the mixture in an amount of 0 mass % or more and 40 mass % or less during the surface treatment process.

[0059] In the present embodiment, when the surface treatment is performed by a dry method, a solvent that is miscible with the silane compound may be mixed. Examples of such solvents include alcohols such as methanol, ethanol, and isopropanol, as well as n-hexane, toluene, and xylene. When the surface treatment is performed by adding water, among these solvents, polar solvents such as alcohols that are highly compatible with water are preferably used.

[0060] The surface modification in this embodiment can be carried out using a general device capable of surface modification, such as a known stirrer, disperser, etc. Examples of such a device include a Henschel mixer, a super mixer, a colloid mill, a roll mill, an ultrasonic disperser, a high-pressure homogenizer, an ultimizer, a rotary mill, a planetary mill, a bead mill, and a sand mill.

[0061] To accelerate the surface modification reaction, the surface modification reaction may be carried out under heating. After the surface modification is carried out using the above-described apparatus, a heating step may be carried out to remove by-products, solvents, etc. and to accelerate the surface modification reaction. The heating temperature is not particularly limited as long as it is a temperature at which the polymerization reaction of the silane compound proceeds. The heating temperature is preferably, for example, 35°C or higher and 80°C or lower. The heating temperature may be 40°C or higher and 75°C or lower, 45°C or higher and 70°C or lower, or 50°C or higher and 65°C or lower. A heating temperature of 35°C or higher allows the polymerization reaction of the silane compound to proceed. On the other hand, a heating temperature of 80°C or lower can prevent aggregation of metal oxide particles due to a rapid reaction of the silane compound.

[0062] The heating time is not particularly limited and may be a time sufficient to remove by-products. The heating time may be, for example, 30 minutes or more, 1 hour or more, or 3 hours or more. From the viewpoint of reducing the cost of the semiconductor light-emitting device, a short heating time is preferable, preferably 12 hours or less, more preferably 10 hours or less, even more preferably 8 hours or less, and most preferably 6 hours or less. The heating time may be 4 hours or less, 3 hours or less, 2 hours or less, or 1 hour or less.

[0063] It is preferable to perform crushing after surface-modifying the metal oxide particles with a silane compound. The crushing step may be performed before or after the heating step. By performing the crushing step, the hydroxyl group treatment rate can be improved and the D50 can be easily adjusted to a desired size. The crushing step can be carried out using a crusher. Any crusher can be selected, and examples thereof include an atomizer, a hammer mill, a jet mill, an impeller mill, and a pin mill.

[0064] In this manner, the surface-modified metal oxide particles 6 can be produced. The surface-modified metal oxide particles 6 are not in the state of a dispersion containing a solvent, but are in the state of a solid consisting of only the surface-modified metal oxide particles 6.

[0065] (Method of manufacturing sealing member) The sealing member 4 can be obtained by applying a sealing material, which is a mixture of surface-modified metal oxide particles 6 and a sealing resin 5, onto the light-emitting element 3, and then curing the sealing material. In the process of mixing the sealing material in this embodiment, that is, in the process of mixing the surface-modified metal oxide particles 6 and the sealing resin 5, no solvent is added.

[0066] (Other ingredients) The sealing material of this embodiment may contain components other than those described above. For example, the sealing material of this embodiment may contain components other than those described above as needed, such as general additives such as dispersants, dispersion aids, antioxidants, flow control agents, thickeners, pH adjusters, preservatives, polymerization initiators, polymerization inhibitors, curing catalysts, and light diffusing agents. As the light diffusing agent, silica particles having an average particle size of 1 μm to 30 μm are preferably used.

[0067] According to the manufacturing method of the semiconductor light-emitting device of this embodiment, the light-emitting element is sealed with a sealing material containing solid surface-treated metal oxide particles that have been surface-treated by a dry method and a sealing resin, and phosphor particles or a layer containing phosphor particles are not formed, so that a semiconductor light-emitting device with excellent light extraction efficiency can be easily manufactured.

[0068] (Lighting equipment, display devices) The light emitting device of the present embodiment as described above can be used in, for example, a lighting fixture or a display device.Accordingly, one aspect of the present invention relates to a lighting fixture or a display device including the light emitting device of the present embodiment. Examples of lighting fixtures include general lighting devices such as indoor lights and outdoor lights, and lighting for switches of electronic devices such as mobile phones and office automation equipment. The lighting fixture of this embodiment includes the light emitting device of this embodiment, and therefore emits a larger luminous flux than conventional lighting fixtures even when using the same light emitting element, thereby making the surrounding environment brighter.

[0069] Examples of display devices include mobile phones, personal digital assistants, electronic dictionaries, digital cameras, computers, televisions, and peripheral devices thereof. The display device of this embodiment is equipped with the light-emitting device of this embodiment, and therefore, even if the same light-emitting element is used, the emitted luminous flux is greater than in the conventional case, and, for example, a clearer and brighter display can be produced. [Example]

[0070] The present invention will be described in more detail below with reference to examples and comparative examples. Note that the examples described below are merely examples of the present invention and are not intended to limit the present invention.

[0071] [Example 1] (Preparation of surface-modified metal oxide particles) (i) Hydrolysis process 93.63 parts by mass of octyltriethoxysilane (trade name: KBE-3083, manufactured by Shin-Etsu Chemical Co., Ltd.), 6.09 parts by mass of water, and 0.28 parts by mass of hydrochloric acid (1N) were prepared. These were added to a container and mixed at room temperature for 1 hour to obtain a hydrolyzed liquid.

[0072] (ii) Surface modification process 64.08 parts by mass of aluminum oxide (Al2O3) particles A1 (manufactured by Baikowski, product name: CR125) having an average primary particle diameter of 12 nm, 14.01 parts by mass of the above hydrolyzed liquid, and 21.92 parts by mass of isopropyl alcohol were mixed. The resulting mixture was dried by heating at 80°C for 1 hour to obtain aluminum oxide particles surface-modified with a silane compound. The resulting aluminum oxide particles surface-modified with the silane compound were crushed for 30 seconds using a mixer (product name: Wonder Blender, manufactured by Osaka Chemical Co., Ltd.). The crushed surface-modified aluminum oxide particles were heated at 100° C. for 3 hours to obtain surface-modified aluminum oxide particles B1 of Example 1.

[0073] (Preparation of sealing material) Methylphenyl silicone resin (product name: KER-2500-A / B, manufactured by Shin-Etsu Chemical Co., Ltd.) as a sealing resin and the surface-modified aluminum oxide particles of Example 1 were mixed in a mass ratio of 99:1 to prepare the sealing material of Example 1.

[0074] (Preparation of hardened body for evaluation) The sealing material of Example 1 was filled into a Teflon (registered trademark) coated stainless steel container having a thickness of 1 mm so that the film thickness was 1 mm. The mixture was then heated at 100°C for 2 hours, and then at 150°C for 4 hours to obtain a cured product for evaluating optical properties. The thickness of the cured product taken out of the container was 1 mm.

[0075] (light transmittance) The cured product of Example 1 was removed from the container and the linear transmittance and integrated transmittance at wavelengths of 450 nm and 600 nm were measured using a spectrophotometer (model number: V-770, manufactured by JASCO Corporation). The integrated transmittance refers to the result measured using an integrating sphere. The scattered light component was calculated from the difference between the integrated transmittance and the linear transmittance. The results are shown in Table 1.

[0076] (LED package manufacturing) The brightness of the LED package to be sealed with the sealing material of Example 1 was measured by applying a voltage of 3 V and a current of 150 mA to the LED package using a total luminous flux measurement system (manufactured by Otsuka Electronics Co., Ltd.) and measuring the light intensity. That is, the brightness A of the optical element itself was measured.

[0077] The encapsulating material of Example 1 was filled into the LED lead frame to a thickness of 300 μm, and then kept at room temperature for 3 hours. Next, the sealing material was heated and cured to form a sealing member, and the LED package of Example 1 was obtained.

[0078] For the LED package of Example 1, brightness B was measured by applying a voltage of 3 V and a current of 150 mA to the LED package and measuring the light using a total luminous flux measurement system (manufactured by Otsuka Electronics Co., Ltd.). The improvement rate ((B-A) / A x 100) of the brightness B (lm) of the LED package of Example 1 relative to the brightness A (lm) of the optical element itself was calculated. As a result, the improvement rate of the brightness of the LED package of Example 1 was 2.53%. The results are shown in Table 1.

[0079] [Example 2] (Preparation of sealing material) A methylphenyl silicone resin (product name: KER-2500-A / B, manufactured by Shin-Etsu Chemical Co., Ltd.) was used as a sealing resin, and the surface-modified aluminum oxide particles of Example 1 were mixed in a mass ratio of 95:5 to prepare the sealing material of Example 2. A cured product of the sealing material of Example 2 was obtained and the light transmittance was measured in the same manner as in Example 1. The results are shown in Table 1.

[0080] (LED package manufacturing) An LED package of Example 2 was produced using the sealing material of Example 2 in the same manner as in Example 1. The improvement rate of brightness of the LED package of Example 2 measured in the same manner as in Example 1 is shown in Table 1.

[0081] [Example 3] (Preparation of sealing material) Methylphenyl silicone resin (product name: KER-2500-A / B, manufactured by Shin-Etsu Chemical Co., Ltd.) as a sealing resin and the surface-modified aluminum oxide particles of Example 1 were mixed in a mass ratio of 93:7 to prepare the sealing material of Example 3. A cured product of the sealing material of Example 3 was obtained and the light transmittance was measured in the same manner as in Example 1. The results are shown in Table 1.

[0082] (LED package manufacturing) An LED package of Example 3 was produced using the sealing material of Example 3 in the same manner as in Example 1. The improvement rate of brightness of the LED package of Example 3 measured in the same manner as in Example 1 is shown in Table 1.

[0083] [Example 4] (Preparation of surface-modified metal oxide particles) (i) Hydrolysis process 93.63 parts by mass of octyltriethoxysilane (trade name: KBE-3083, manufactured by Shin-Etsu Chemical Co., Ltd.), 6.09 parts by mass of water, and 0.28 parts by mass of hydrochloric acid (1N) were prepared. These were added to a container and mixed at room temperature for 1 hour to obtain a hydrolyzed liquid.

[0084] (ii) Surface modification process 64.0 parts by mass of zirconium oxide (ZrO2) particles C1 (manufactured by Sumitomo Osaka Cement Co., Ltd.) having an average primary particle diameter of 12 nm, 10.3 parts by mass of the above hydrolyzed liquid, and 25.7 parts by mass of isopropyl alcohol were mixed. The resulting mixture was dried by heating at 80°C for 1 hour to obtain zirconium oxide particles surface-modified with a silane compound. The obtained zirconium oxide particles surface-modified with a silane compound were crushed for 30 seconds using a mixer (product name: Wonder Blender, manufactured by Osaka Chemical Co., Ltd.). The crushed surface-modified zirconium oxide particles were heated at 100° C. for 3 hours to obtain surface-modified zirconium oxide particles D1 of Example 4.

[0085] A methylphenyl silicone resin (product name: KER-2500-A / B, manufactured by Shin-Etsu Chemical Co., Ltd.) was used as a sealing resin, and the surface-modified zirconium oxide particles of Example 4 were mixed in a mass ratio of 99:1 to prepare the sealing material of Example 4. A cured product of the sealing material of Example 4 was obtained and the light transmittance was measured in the same manner as in Example 1. The results are shown in Table 1.

[0086] (LED package manufacturing) An LED package of Example 4 was produced using the sealing material of Example 4 in the same manner as in Example 1. The improvement rate of brightness of the LED package of Example 4 measured in the same manner as in Example 1 is shown in Table 1.

[0087] [Example 5] (Preparation of sealing material) A methylphenyl silicone resin (product name: KER-2500-A / B, manufactured by Shin-Etsu Chemical Co., Ltd.) was used as a sealing resin, and the surface-modified zirconium particles of Example 4 were mixed in a mass ratio of 97:3 to prepare the sealing material of Example 5. A cured product of the sealing material of Example 5 was obtained and the light transmittance was measured in the same manner as in Example 1. The results are shown in Table 1.

[0088] (LED package manufacturing) An LED package of Example 5 was produced using the sealing material of Example 5 in the same manner as in Example 1. The improvement rate of brightness of the LED package of Example 5, measured in the same manner as in Example 1, is shown in Table 1.

[0089] [Example 6] (Preparation of surface-modified metal oxide particles) 10.0 parts by mass of methoxy group-containing phenyl silicone resin (product name: KR217, manufactured by Shin-Etsu Chemical Co., Ltd.), 0.39 parts by mass of water, 0.04 parts by mass of hydrochloric acid (1N), aluminum oxide (Al2O3) particles A1 (manufactured by Baikowski, product name: CR125) with an average primary particle diameter of 12 nm, and 22.8 parts by mass of methanol were mixed. The resulting mixture was dried by heating at 80°C for 1 hour to obtain aluminum oxide particles surface-modified with a silicone compound. The obtained aluminum oxide particles surface-modified with a silicone compound were crushed for 30 seconds using a mixer (product name: Wonder Blender, manufactured by Osaka Chemical Co., Ltd.). The crushed surface-modified aluminum oxide particles were heated at 130° C. for 3 hours to obtain surface-modified aluminum oxide particles of Example 6.

[0090] Methylphenyl silicone resin (product name: KER-2500-A / B, manufactured by Shin-Etsu Chemical Co., Ltd.) as a sealing resin and the surface-modified aluminum oxide particles of Example 6 were mixed in a mass ratio of 95:5 to prepare the sealing material of Example 6. A cured product of the sealing material of Example 6 was obtained and the light transmittance was measured in the same manner as in Example 1. As a result, the linear transmittance at a wavelength of 450 nm was 0.2%, the integrated transmittance was 65.9%, and the scattered light amount was 65.7%.

[0091] (LED package manufacturing) An LED package of Example 6 was produced using the sealing material of Example 6 in the same manner as in Example 1. The improvement rate of brightness of the LED package of Example 6 measured in the same manner as in Example 1 was 6.8%.

[0092] [Comparative Example 1] (Making sealing materials and LED packages) 0.93 g of methylphenyl silicone resin (product name: KER-2500-A / B, manufactured by Shin-Etsu Chemical Co., Ltd.) as an encapsulating resin, 0.07 g of the surface-modified aluminum oxide particles of Example 1, and 0.32 g of phosphor particles (yttrium aluminum garnet: YAG) were mixed together to prepare an encapsulating material of Comparative Example 1 containing phosphor particles. An LED package of Comparative Example 1 was produced in the same manner as in Example 1, except that the sealing material of Comparative Example 1 was used instead of the sealing material of Example 1. The brightness improvement rate of this LED package was -2.05%. The results are shown in Table 1.

[0093] Comparative Example 2 (Preparation of sealing material) A methylphenyl silicone resin (product name: KER-2500-A / B, manufactured by Shin-Etsu Chemical Co., Ltd.) was used as a sealing resin, and the surface-modified zirconium oxide particles of Example 4 were mixed in a mass ratio of 95:5 to prepare a sealing material of Comparative Example 2. A cured product of the sealing material of Comparative Example 2 was obtained and its light transmittance was measured in the same manner as in Example 1. The results are shown in Table 1.

[0094] (LED package manufacturing) An LED package of Comparative Example 2 was produced using the sealing material of Comparative Example 2 in the same manner as in Example 1. The improvement rate of brightness of the LED package of Comparative Example 2, measured in the same manner as in Example 1, is shown in Table 1.

[0095] [Table 1]

[0096] From the results shown in Table 1, it was confirmed that in Examples 1 to 6, an LED package in which a light-emitting element is sealed with a sealing member that does not contain phosphor particles and has a scattering component of 40% or more at a wavelength of 450 nm when the sealing member is 1 mm thick is brighter than the light before sealing. Furthermore, by comparing Example 3 with Comparative Example 1, it was confirmed that the brightness of the LED package was improved when the sealing member did not contain phosphor particles. [Explanation of symbols]

[0097] 1. Semiconductor light-emitting device 2 boards 3 Light-emitting element 4 Sealing member 5 Sealing resin 6 Surface-modified metal oxide particles 21 Recess

Claims

1. A semiconductor light emitting device having a light emitting element sealed in a sealing member, the sealing member includes a sealing resin and surface-modified metal oxide particles; the sealing member does not contain phosphor particles, A semiconductor light emitting device, wherein the scattering component at a wavelength of 450 nm is 40% or more when the sealing member is a cured body having a thickness of 1 mm.

2. 2. The semiconductor light-emitting device according to claim 1, wherein the refractive index of the metal oxide particles contained in the surface-modified metal oxide particles is 1.7 or more.

3. 2. The semiconductor light-emitting device according to claim 1, wherein the average primary particle size of the metal oxide particles contained in the surface-modified metal oxide particles is 3 nm or more and 200 nm or less.

4. 2. The semiconductor light-emitting device according to claim 1, wherein the surface modifier contained in the surface-modified metal oxide particles is at least one of a silane compound and a silicone compound.

5. A display device comprising the semiconductor light emitting device according to any one of claims 1 to 4.

6. A lighting fixture comprising the semiconductor light emitting device according to any one of claims 1 to 4.

7. A method for manufacturing a semiconductor light emitting device according to any one of claims 1 to 4, comprising: a step of applying a sealing material containing surface-modified metal oxide particles and a sealing resin onto a light-emitting element, curing the sealing material to form a sealing member, and sealing the light-emitting element with the sealing member; No solvent is added during the mixing process of the sealing material, The method for manufacturing a semiconductor light-emitting device, wherein the total content of the surface-modified metal oxide particles and the sealing resin in the sealing material is 99 parts by mass or more.

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