Schottky barrier diode

Abstract

To provide a Schottky barrier diode capable of achieving high withstand voltage using gallium oxide and increasing peak serge reverse power capacity.SOLUTION: A Schottky barrier diode 1 includes: an n-type semiconductor layer 10 composed of a Ga2O3 based material; Schottky barrier metal 20; a p-type semiconductor part 30 in contact with the outer periphery of the Schottky barrier metal 20; an n-type semiconductor area 40 formed in the n-type semiconductor layer 10 so as to be in contact with the p-type semiconductor part 30 and having an impurity concentration higher than that of the n-type semiconductor layer 10; and a first high resistance semiconductor area 50 having a resistance higher than that of the n-type semiconductor layer 10. The Schottky barrier diode 1 can achieve high withstand voltage using gallium oxide and increase peak serge reverse power capacity since holes caused by avalanche breakdown generated in a pn junction are absorbed into the p-type semiconductor part 30.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a Schottky barrier diode. [Background technology]

[0002] In recent years, gallium oxide (Ga2O3) has attracted attention as a semiconductor material. Because gallium oxide has a very high critical electric field value, semiconductor devices using gallium oxide have the potential to be semiconductor devices with high breakdown voltage.

[0003] However, gallium oxide cannot currently be made into an electrically active p-type semiconductor because (1) shallow acceptor levels cannot be formed, (2) the effective mass of holes is extremely heavy and the mobility is almost zero, and (3) holes are self-trapped by polarons.

[0004] For this reason, when a Schottky barrier diode is manufactured as a semiconductor device using gallium oxide, holes will have no escape route when an avalanche breakdown occurs, making it difficult to obtain sufficient peak surge reverse power resistance.

[0005] 7, a Schottky barrier diode 901 according to the comparative example includes an n-type semiconductor layer 910 made of an n-type Ga2O3-based material, a Schottky barrier metal 920 disposed on the surface of the n-type semiconductor layer 910 so as to be in contact with the n-type semiconductor layer 910, a high-resistance semiconductor region 950 made of an n-type Ga2O3-based material and in contact with the outer periphery of the Schottky barrier metal 920, and an n-type substrate layer 960 having an impurity concentration higher than that of the n-type semiconductor layer 910.

[0006] It is also known to form a p-type semiconductor layer in contact with the outer periphery of the Schottky barrier metal (see, for example, Patent Document 1). As shown in Fig. 8, a conventional Schottky barrier diode 902 includes an n-type semiconductor layer 910, a Schottky barrier metal 920, a p-type semiconductor layer 930 formed in the n-type semiconductor layer 910 and in contact with the outer periphery of the Schottky barrier metal 920, and an n-type substrate layer 960.

[0007] It is believed that the above-described structure can achieve the electric field relaxation at the end of the Schottky barrier metal. [Prior art documents] [Patent documents]

[0008] [Patent Document 1] Japanese Patent Publication No. 2022-65153 Summary of the Invention [Problem to be solved by the invention]

[0009] However, when a high-resistance semiconductor region is formed in contact with the outer periphery of the Schottky barrier metal, as in the Schottky barrier diode 901 according to the comparative example, it is difficult to achieve low-resistance contact with the Schottky barrier metal because the high-resistance semiconductor region is n-type. For this reason, holes generated by avalanche breakdown pile up in the high-resistance semiconductor region, and it is thought that sufficient peak surge reverse power resistance cannot be obtained.

[0010] Furthermore, even if a p-type semiconductor layer is formed in contact with the outer periphery of the Schottky barrier metal, as in the conventional Schottky barrier diode 902, it is believed that sufficient peak surge reverse power resistance cannot be obtained. This is because the critical electric field of gallium oxide is extremely large, and the leakage current due to thermionic emission and thermionic field emission increases with increasing applied reverse bias.

[0011] The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide a Schottky barrier diode that can achieve a high breakdown voltage using gallium oxide and can increase the peak surge reverse power withstand capability. [Means for solving the problem]

[0012] The Schottky barrier diode of the present invention is characterized by comprising: an n-type semiconductor layer made of an n-type Ga2O3-based material; a Schottky barrier metal disposed on a surface of the n-type semiconductor layer so as to be in contact with the n-type semiconductor layer; a p-type semiconductor portion in contact with the outer periphery of the Schottky barrier metal; an n-type semiconductor region made of an n-type Ga2O3-based material and formed in the n-type semiconductor layer so as to be in contact with the p-type semiconductor portion and having a higher impurity concentration than the n-type semiconductor layer; and a first high-resistance semiconductor region made of an n-type Ga2O3-based material and formed on the outer periphery of a contact surface between the p-type semiconductor portion and the n-type semiconductor region and having a higher resistance than the n-type semiconductor layer. [Effects of the Invention]

[0013] According to the Schottky barrier diode of the present invention, since it has an n-type semiconductor layer made of a Ga2O3-based material, it is possible to realize a high breakdown voltage using gallium oxide.

[0014] The Schottky barrier diode of the present invention also includes a p-type semiconductor portion in contact with the outer periphery of the Schottky barrier metal; an n-type semiconductor region made of an n-type Ga2O3-based material and formed within the n-type semiconductor layer so as to be in contact with the p-type semiconductor portion and having a higher impurity concentration than the n-type semiconductor layer; and a first high-resistance semiconductor region made of an n-type Ga2O3-based material and formed on the outer periphery of the interface between the p-type semiconductor portion and the n-type semiconductor region and having a higher resistance than the n-type semiconductor layer. Therefore, with the Schottky barrier diode of the present invention, a p-n junction is formed between the p-type semiconductor portion and the n-type semiconductor region, and the first high-resistance semiconductor region alleviates the electric field at the periphery of the p-n junction. Therefore, in the Schottky barrier diode of the present invention, avalanche breakdown occurs near the center of this p-n junction. Holes generated by avalanche breakdown are absorbed into the p-type semiconductor portion without being locally piled up, and therefore the Schottky barrier diode of the present invention can achieve a high peak surge reverse power resistance.

[0015] That is, the Schottky barrier diode of the present invention can achieve a high breakdown voltage by using gallium oxide, and is a Schottky barrier diode that can increase the peak surge reverse power withstand capability. [Brief explanation of the drawings]

[0016] [Figure 1] 1 is a longitudinal cross-sectional view of a Schottky barrier diode 1 according to embodiment 1. Note that Fig. 1 is a schematic diagram and does not necessarily accurately depict the size, shape, etc. of each component shown. The same applies to each drawing showing the structure of a Schottky barrier diode, which will be described later. [Figure 2]2 is a graph schematically showing an electric field profile when a reverse bias voltage is applied to the Schottky barrier diode 1 according to the embodiment 1. The vertical axis of the graph in Fig. 2 represents the electric field strength, and the horizontal axis represents the depth from the top surface (the surface of the Schottky barrier metal 20). Note that the division indicated by the symbol BO1 in Fig. 2 represents the boundary between the p-type semiconductor section 30 and the n-type semiconductor region 40, the division indicated by the symbol BO2 represents the boundary between the n-type semiconductor region 40 and the n-type semiconductor layer 10, and the division indicated by the symbol BO3 represents the boundary between the n-type semiconductor layer 10 and the n-type substrate layer 60. [Figure 3] FIG. 10 is a vertical cross-sectional view of a Schottky barrier diode 2 according to a second embodiment. [Figure 4] 4 is a graph schematically showing an electric field profile when a reverse bias voltage is applied to the Schottky barrier diode 2 according to the second embodiment. The vertical axis of the graph in Fig. 4 represents the electric field strength, and the horizontal axis represents the depth from the top surface. Note that the division indicated by the symbol BO1 in Fig. 4 represents the boundary between the p-type semiconductor portion 32 and the n-type semiconductor region 40, the division indicated by the symbol BO2 represents the boundary between the n-type semiconductor region 40 and the n-type semiconductor layer 10, and the division indicated by the symbol BO3 represents the boundary between the n-type semiconductor layer 10 and the n-type substrate layer 60. [Figure 5] FIG. 10 is a vertical cross-sectional view of a Schottky barrier diode 3 according to a first modification. [Figure 6] FIG. 10 is a vertical cross-sectional view of a Schottky barrier diode 4 according to a second modification. [Figure 7] FIG. 9 is a vertical cross-sectional view of a Schottky barrier diode 901 according to a comparative example. [Figure 8] FIG. 9 is a longitudinal cross-sectional view of a conventional Schottky barrier diode 902. DETAILED DESCRIPTION OF THE INVENTION

[0017] The Schottky barrier diode of the present invention will be described below based on the embodiments shown in the drawings. In each embodiment described below, components having the exact same or substantially the same functions will be designated by common reference numerals in each embodiment, even if their shapes are slightly different, and descriptions already given may be omitted. The embodiments described below do not limit the invention according to the claims. Furthermore, not all of the elements and combinations thereof described in each embodiment are necessarily essential to the solution of the present invention.

[0018] [Embodiment 1] 1. Configuration of Schottky barrier diode 1 according to embodiment 1 As shown in Fig. 1, the Schottky barrier diode 1 according to the first embodiment includes an n-type semiconductor layer 10, a Schottky barrier metal 20, a p-type semiconductor section 30, an n-type semiconductor region 40, a first high-resistance semiconductor region 50, a second high-resistance semiconductor region 52, and an n-type substrate layer 60. Note that the Schottky barrier diode 1 shown in Fig. 1 is illustrated mainly with respect to components important to the present invention. Therefore, the Schottky barrier diode 1 may include components other than those described above (for example, a cathode electrode in ohmic contact with the n-type substrate layer 60, etc.). Each component will be described below.

[0019] The n-type semiconductor layer 10 is made of an n-type Ga2O3-based material. The n-type semiconductor layer 10 is, for example, an epitaxial layer formed on the upper surface of the n-type substrate layer 60. The n-type semiconductor layer 10 contains donor impurities such as Si and Sn.

[0020] In this specification, when a component is described as "made of... material," it does not mean that the component is made of only the pure material, but that it may contain trace amounts of impurities (donors, etc.).

[0021] The Schottky barrier metal 20 is disposed on the surface of the n-type semiconductor layer 10 so as to be in contact with the n-type semiconductor layer 10. The junction between the Schottky barrier metal 20 and the n-type semiconductor layer 10 is a Schottky junction. Any material can be used to form the Schottky barrier metal 20, as long as it forms a Schottky junction with the n-type semiconductor layer 10. The Schottky barrier metal 20 may also be made of a composite (e.g., a laminate) of different metals. The Schottky barrier metal 20 may be used as an anode electrode as it is.

[0022] The p-type semiconductor section 30 contacts the outer periphery of the Schottky barrier metal 20. The p-type semiconductor section 30 in the first embodiment is disposed on the surface of the n-type semiconductor layer 10. The p-type semiconductor section 30 is preferably made of, for example, a NiO-based material, a CuO-based material, a CuO-based material, or a SnO-based material (p-type oxide semiconductor material). The p-type semiconductor section 30 can be formed, for example, by a method such as depositing a p-type oxide semiconductor material on the surface of the n-type semiconductor layer 10.

[0023] The n-type semiconductor region 40 is made of an n-type Ga2O3-based material and is formed in the n-type semiconductor layer 10 so as to be in contact with the p-type semiconductor portion 30. The n-type semiconductor region 40 has a higher impurity concentration than the n-type semiconductor layer 10. The n-type semiconductor region 40 can be formed by implanting impurities into a specific region of the n-type semiconductor layer 10. The n-type semiconductor region 40 can also be formed by forming a groove (trench) in a specific region of the n-type semiconductor layer 10 and depositing a Ga2O3-based material having an impurity concentration higher than that of the n-type semiconductor layer 10 in the groove.

[0024] A pn junction is formed between the p-type semiconductor portion 30 and the n-type semiconductor region 40.

[0025] The first high-resistance semiconductor region 50 is made of an n-type Ga2O3-based material and is formed on the outer periphery of the contact surface between the p-type semiconductor section 30 and the n-type semiconductor region 40. The first high-resistance semiconductor region 50 has a higher resistance than the n-type semiconductor layer 10. In the Schottky barrier diode 1, the first high-resistance semiconductor region 50 protrudes from the outer periphery of the n-type semiconductor region 40 to the outside of the n-type semiconductor region 40. The first high-resistance semiconductor region 50 can be formed, for example, by implanting impurities (e.g., N2 or Mg) that impart high resistance into a specific region of the n-type semiconductor region 40. Alternatively, the first high-resistance semiconductor region 50 can be formed by forming a trench in a specific region of the n-type semiconductor region 40 and depositing a Ga2O3-based material having a higher resistance than the n-type semiconductor layer 10 in the trench.

[0026] The second high-resistance semiconductor region 52 is made of an n-type Ga2O3-based material, and is formed on the inner periphery side of the contact surface between the p-type semiconductor section 30 and the n-type semiconductor region 40. The second high-resistance semiconductor region 52 has a higher resistance than the n-type semiconductor layer 10. In the Schottky barrier diode 1, the second high-resistance semiconductor region 52 protrudes from the inner periphery of the n-type semiconductor region 40 to the outside of the n-type semiconductor region 40. The method for forming the second high-resistance semiconductor region 52 is the same as that for the first high-resistance semiconductor region 50, and therefore a description thereof will be omitted.

[0027] The first high-resistance semiconductor region 50 and the second high-resistance semiconductor region 52 are spaced apart. In other words, the p-type semiconductor portion 30 and the n-type semiconductor region 40 are in direct contact (junction) between the first high-resistance semiconductor region 50 and the second high-resistance semiconductor region 52.

[0028] The n-type substrate layer 60 has a higher impurity concentration than the n-type semiconductor layer 10. The n-type substrate layer 60 is a substrate layer used when the Schottky barrier diode 1 is manufactured.

[0029] Here, the electric field strength when a reverse bias voltage is applied to the Schottky barrier diode 1 will be briefly described using the graph in Fig. 2. The graph indicated by symbol A1 in Fig. 2 (shown as a solid line) is a graph showing the relationship between the electric field strength and depth in the portion indicated by dashed line A1-A1' in Fig. 1 (the portion passing through the Schottky barrier metal 20, the n-type semiconductor layer 10, and the n-type substrate layer 60). The graph indicated by symbol B1 in Fig. 2 (shown as a dashed line) is a graph showing the relationship between the electric field strength and depth in the portion indicated by dashed line B1-B1' in Fig. 1 (the portion passing through the Schottky barrier metal 20, the p-type semiconductor portion 30, the n-type semiconductor region 40, the n-type semiconductor layer 10, and the n-type substrate layer 60).

[0030] As shown in FIG. 2, when a reverse bias voltage is applied, the electric field strength at the interface between the p-type semiconductor portion 30 and the n-type semiconductor region 40 (graph B1) is higher than that at the interface between the Schottky barrier metal 20 and the n-type semiconductor layer 10 (graph A1). This is due to the p-n junction between the p-type semiconductor portion 30 and the n-type semiconductor region 40, which determines the breakdown voltage. As a result, an avalanche breakdown occurs between the p-type semiconductor portion 30 and the n-type semiconductor region 40, and the generated holes are absorbed into the p-type semiconductor portion 30 without being locally piled up. Furthermore, because the Schottky barrier diode 1 includes the first high-resistance semiconductor region 50 and the second high-resistance semiconductor region 52, the electric field at the end of the p-n junction is relaxed, and avalanche breakdown occurs near the center of the junction between the p-type semiconductor portion 30 and the n-type semiconductor region 40.

[0031] 2. Effects of the Schottky Barrier Diode 1 According to the First Embodiment The effects of the Schottky barrier diode 1 according to the first embodiment will be described below.

[0032] The Schottky barrier diode 1 according to the first embodiment includes the n-type semiconductor layer 10 made of a Ga2O3-based material, and therefore can achieve a high breakdown voltage using gallium oxide.

[0033] The Schottky barrier diode 1 according to the first embodiment includes a p-type semiconductor section 30, an n-type semiconductor region 40, and a first high-resistance semiconductor region 50. Therefore, in the Schottky barrier diode 1 according to the first embodiment, a p-n junction is formed between the p-type semiconductor section 30 and the n-type semiconductor region 40, and the first high-resistance semiconductor region 50 reduces the electric field at the periphery of the p-n junction. Therefore, in the Schottky barrier diode 1 according to the first embodiment, avalanche breakdown occurs near the center of this p-n junction. Holes generated by the avalanche breakdown are absorbed into the p-type semiconductor section 30 without being locally piled up, and therefore the Schottky barrier diode 1 according to the first embodiment can have a high peak surge reverse power resistance.

[0034] That is, the Schottky barrier diode 1 according to the first embodiment is a Schottky barrier diode that can achieve a high breakdown voltage by using gallium oxide and can also increase the peak surge reverse power withstand capability.

[0035] The Schottky barrier diode 1 according to the first embodiment further includes a second high-resistance semiconductor region 52 made of an n-type Ga2O3-based material, formed on the inner periphery of the contact surface between the p-type semiconductor section 30 and the n-type semiconductor region 40, and having a higher resistance than the n-type semiconductor layer 10. In the Schottky barrier diode 1 according to the first embodiment, the first high-resistance semiconductor region 50 and the second high-resistance semiconductor region are spaced apart. Therefore, the Schottky barrier diode 1 can relax the electric field at both the inner and outer periphery edges of the p-n junction, and can reliably cause avalanche breakdown to occur near the center of the p-n junction.

[0036] Furthermore, in the Schottky barrier diode 1 according to the first embodiment, the p-type semiconductor section 30 is disposed on the surface of the n-type semiconductor layer 10, and therefore, it is possible to dispose the p-type semiconductor section 30 without performing processes such as forming a groove.

[0037] Furthermore, according to the Schottky barrier diode 1 of embodiment 1, when the p-type semiconductor portion 30 is made of a NiO-based material, a CuO-based material, a CuO-based material, or a SnO-based material, a good pn junction can be formed between the p-type semiconductor portion 30 and the n-type semiconductor region 40 made of a GaO-based material.

[0038] [Embodiment 2] The Schottky barrier diode 2 according to the second embodiment basically has the same configuration as the Schottky barrier diode 1 according to the first embodiment, but the position of the p-type semiconductor portion is different. That is, in the Schottky barrier diode 2, the p-type semiconductor portion 32 is disposed in the n-type semiconductor region 40, as shown in Fig. 3. The p-type semiconductor portion 32 can be formed by forming a groove (trench) in a specific region of the n-type semiconductor region 40 and depositing a p-type semiconductor (p-type oxide semiconductor material) in the groove.

[0039] Here, the electric field strength when a reverse bias voltage is applied to the Schottky barrier diode 2 will be briefly described using the graph in Fig. 4. The graph indicated by symbol A2 in Fig. 4 (shown as a solid line) is a graph showing the relationship between the electric field strength and depth in the portion shown by dashed line A2-A2' in Fig. 3. The graph indicated by symbol B2 in Fig. 4 (shown as a dashed line) is a graph showing the relationship between the electric field strength and depth in the portion shown by dashed line B2-B2' in Fig. 3 (the portion passing through the Schottky barrier metal 20 → p-type semiconductor portion 32 → n-type semiconductor region 40 → n-type semiconductor layer 10 → n-type substrate layer 60).

[0040] As shown in FIG. 4, when a reverse bias voltage is applied, the electric field strength at the interface between the p-type semiconductor portion 32 and the n-type semiconductor region 40 (graph B2) is higher than that at the interface between the Schottky barrier metal 20 and the n-type semiconductor layer 10 (graph A2). This is due to the p-n junction between the p-type semiconductor portion 32 and the n-type semiconductor region 40, which determines the breakdown voltage. As a result, an avalanche breakdown occurs between the p-type semiconductor portion 32 and the n-type semiconductor region 40, and the generated holes are absorbed into the p-type semiconductor portion 32 without being locally piled up. Furthermore, because the Schottky barrier diode 2 includes the first high-resistance semiconductor region 50 and the second high-resistance semiconductor region 52, the electric field at the end of the p-n junction is relaxed, and avalanche breakdown occurs near the center of the junction between the p-type semiconductor portion 32 and the n-type semiconductor region 40.

[0041] The Schottky barrier diode 2 according to the second embodiment differs in the position of the p-type semiconductor portion, but includes an n-type semiconductor layer 10 made of a Ga2O3-based material, and also includes a p-type semiconductor portion 32, an n-type semiconductor region 40, and a first high-resistance semiconductor region 50. Therefore, like the Schottky barrier diode 1 according to the first embodiment, the Schottky barrier diode 2 is capable of achieving a high breakdown voltage using gallium oxide and is also capable of increasing the peak surge reverse power withstand capability.

[0042] Furthermore, in the Schottky barrier diode 2 according to the second embodiment, the p-type semiconductor portion 32 is disposed in the n-type semiconductor region 40, and therefore the surface of the n-type semiconductor layer 10 can be flattened.

[0043] Although the present invention has been described based on the above-mentioned embodiments, the present invention is not limited to the above-mentioned embodiments. The present invention can be embodied in various forms without departing from the spirit of the present invention, and for example, the following modifications are also possible.

[0044] (1) The position, shape, size, etc. of each component element described in the above embodiment are merely examples and may be changed within the scope that does not impair the effects of the present invention.

[0045] (2) In the drawings of the above-described embodiments and the modified examples described below, the boundaries of each component and region are depicted as straight lines, but the present invention is not limited to this. The boundaries of each component and region may be curved. Furthermore, the boundaries may represent the center between components where the impurity concentration or the like changes stepwise or gradually.

[0046] (3) The Schottky barrier diode 3 according to Modification 1 basically has the same configuration as the Schottky barrier diode 1 according to Embodiment 1, but does not include a second high-resistance semiconductor region, as shown in FIG. 5 . Basically, electric field relaxation on the outer periphery of the p-n junction is more important. Therefore, if avalanche breakdown occurs near the center of the junction between the p-type semiconductor portion and the n-type semiconductor region even without electric field relaxation on the inner periphery, the Schottky barrier diode of the present invention does not need to include a second high-resistance semiconductor region, as does the Schottky barrier diode 3 according to Modification 1. Although not shown, a Schottky barrier diode having a configuration similar to the Schottky barrier diode 2 according to Embodiment 2 may also not need to include a second high-resistance semiconductor region in some cases.

[0047] (4) The Schottky barrier diode 4 according to Modification 2 basically has the same configuration as the Schottky barrier diode 1 according to Embodiment 1, but as shown in Fig. 6, the first high-resistance semiconductor region 50b and the second high-resistance semiconductor region 52b do not protrude outside the n-type semiconductor region 40. Even with this configuration, the Schottky barrier diode 4 according to Modification 2 can achieve the same effects as the Schottky barrier diode 1 according to Embodiment 1.

[0048] Although not shown, in a Schottky barrier diode having a configuration similar to that of the Schottky barrier diode 2 according to embodiment 2, the first high-resistance semiconductor region and the second high-resistance semiconductor region may not protrude outside the n-type semiconductor region. Even in this case, the Schottky barrier diode can achieve the same effects as those of the Schottky barrier diode 2 according to embodiment 2.

[0049] Furthermore, although not shown, in a Schottky barrier diode having a configuration similar to that of the Schottky barrier diodes 1 and 2 according to embodiments 1 and 2, only one of the first high-resistance semiconductor region and the second high-resistance semiconductor region may protrude outside the n-type semiconductor region. Even in this case, the Schottky barrier diode can achieve the same effects as the Schottky barrier diode 1 according to embodiment 1 or the Schottky barrier diode 2 according to embodiment 2. [Explanation of symbols]

[0050] 1, 2, 3, 4... Schottky barrier diode, 10... n-type semiconductor layer, 20... Schottky barrier metal, 30, 32... p-type semiconductor portion, 40... n-type semiconductor region, 50, 50b... first high-resistance semiconductor region, 52, 52b... second high-resistance semiconductor region

Claims

1. n-type Ga ２ O ３ an n-type semiconductor layer made of a silicon-based material; a Schottky barrier metal disposed on a surface of the n-type semiconductor layer so as to be in contact with the n-type semiconductor layer; a p-type semiconductor portion in contact with the outer periphery of the Schottky barrier metal; n-type Ga ２ O ３ an n-type semiconductor region made of a silicon-based material, formed in the n-type semiconductor layer so as to be in contact with the p-type semiconductor portion, and having an impurity concentration higher than that of the n-type semiconductor layer; n-type Ga ２ O ３ a first high-resistance semiconductor region made of a silicon-based material, formed on the outer periphery of a contact surface between the p-type semiconductor portion and the n-type semiconductor region, and having a resistance higher than that of the n-type semiconductor layer.

2. n-type Ga ２ O ３ a second high-resistance semiconductor region made of a silicon-based material, formed on the inner periphery of a contact surface between the p-type semiconductor portion and the n-type semiconductor region, and having a resistance higher than that of the n-type semiconductor layer; 2. The Schottky barrier diode according to claim 1, wherein the first high-resistance semiconductor region and the second high-resistance semiconductor region are spaced apart from each other.

3. 2. The Schottky barrier diode according to claim 1, wherein the p-type semiconductor portion is disposed on a surface of the n-type semiconductor layer.

4. 2. The Schottky barrier diode according to claim 1, wherein the p-type semiconductor portion is disposed within the n-type semiconductor region.

5. The p-type semiconductor portion is made of a NiO-based material, a CuO-based material, or a Cu ２ 2. The Schottky barrier diode according to claim 1, wherein the Schottky barrier diode is made of an O-based material or an SnO-based material.

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