Display device

Abstract

To provide a display device having high light efficiency.SOLUTION: The present invention relates to a display device, which may include: a backplane; a light source on the backplane; a quantum dot pattern on the light source; a transparent pattern arranged on the light source apart from the quantum dot pattern in a first direction parallel with a top surface of the backplane; and a reflection pattern between the quantum dot pattern and the transparent pattern.SELECTED DRAWING: Figure 4A

Description

[Technical Field]

[0001] The present invention relates to a display device including a quantum dot pattern. [Background technology]

[0002] As the information society develops, the demand for displays to display information is increasing, and various displays such as liquid crystal displays (LCDs), e-paper (electronic paper), organic light-emitting displays (OLEDs), and microdisplays have been developed and put to use.

[0003] Recently, research into quantum dot displays, which have higher color purity than OLEDs and are solution processable, has been actively conducted. Summary of the Invention [Problem to be solved by the invention]

[0004] One technical problem that the present invention aims to solve is to provide a display device with high light efficiency.

[0005] One technical problem that the present invention aims to solve is to provide a display device with high color reproduction capabilities.

[0006] One technical problem that the present invention aims to solve is to provide a display device having a high resolution. [Means for solving the problem]

[0007] A display device according to some embodiments of the present invention may include a backplane, a light source on the backplane, a quantum dot pattern on the light source, a transparent pattern disposed on the light source and spaced apart from the quantum dot pattern in a first direction parallel to the top surface of the backplane, and a reflective pattern between the quantum dot pattern and the transparent pattern.

[0008] According to some embodiments, the transparent pattern may include at least one of an inorganic thin film, an organic thin film, an organic-inorganic composite thin film, or a combination thereof.

[0009] According to some embodiments, the quantum dot pattern can include quantum dots, which can include at least one of a II-VI compound, a III-V compound, a IV-VI compound, a I-III-VI compound, a Group IV element, or a Group IV compound, or a combination thereof.

[0010] According to some embodiments, the reflective pattern may include at least one of a single elemental metal, a metal alloy, a transition metal oxide, a metal nitride, or an inorganic thin film, or a combination thereof.

[0011] According to some embodiments, the light source may be a blue light source.

[0012] According to some embodiments, the light source may be a blue-green light source.

[0013] According to some embodiments, the display device may further include a scattering pattern on the transparent pattern and a color filter on the quantum dot pattern.

[0014] According to some embodiments, the scattering pattern can include a scattering agent, which can include at least one of titanium oxide (TiO2), zinc oxide (ZnO), tin oxide (SnO), silicon oxide (SiO), nickel oxide (NiO), magnesium oxide (MgO), zirconium oxide (ZrO2), barium titanate (BaTiO3), silicon carbide (SiC), boron nitride (BN), aluminum nitride (AlN), gallium nitride (GaN), zinc sulfide (ZnS), copper chloride (CuCl), strontium titanate (SrTiO3), or lithium niobate (LiNbO3), or a combination thereof.

[0015] According to some embodiments, the display device may further include a blue color filter on the transparent pattern, a green color filter on the transparent pattern, and a red color filter on the quantum dot pattern.

[0016] According to some embodiments, the quantum dot patterns and the transparent patterns may be provided in a plurality of numbers, and the quantum dot patterns and the transparent patterns may be alternately arranged in the first direction.

[0017] According to some embodiments, the width of the upper surface of the transparent pattern in the first direction may be equal to or greater than the width of the lower surface.

[0018] According to some embodiments, the quantum dot pattern may have a width of a lower surface in the first direction that is equal to or greater than a width of an upper surface.

[0019] According to some embodiments, the quantum dot patterns may be provided in a plurality and spaced apart from one another, and may be arranged in a zigzag pattern on a diagonal line between the first direction and a second direction perpendicular to the first direction.

[0020] A display device according to some embodiments of the present invention may include a backplane and a plurality of pixels on the backplane. Each of the plurality of pixels may include a first subpixel and a second subpixel. The first subpixel may include a quantum dot pattern on the backplane, a reflective pattern surrounding the sides of the quantum dot pattern, and a first color filter on the quantum dot pattern. The second subpixel may include a transparent pattern on the backplane. The quantum dot pattern and the transparent pattern may be spaced apart from each other via the reflective pattern.

[0021] According to some embodiments, the second sub-pixel may further include a scattering pattern on the transparent pattern.

[0022] According to some embodiments, the second sub-pixel may further include a second color filter on the transparent pattern, and the first color filter and the second color filter may have different colors.

[0023] A display device according to some embodiments of the present invention may include a backplane, a light source on the backplane, a quantum dot pattern on the light source, a transparent pattern disposed on the light source and spaced apart from the quantum dot pattern in a first direction parallel to an upper surface of the backplane, and a reflective pattern between the quantum dot pattern and the transparent pattern. The quantum dot patterns may be provided in a plurality of patterns, spaced apart from each other, and arranged in a zigzag pattern on a diagonal line between the first direction and a second direction perpendicular to the first direction. The reflective patterns may be provided in a plurality of patterns, spaced apart from each other, and arranged in a zigzag pattern on the diagonal line. The transparent patterns may be provided in a plurality of patterns, with their bottom surfaces connected to each other and their top surfaces arranged in a zigzag pattern on the diagonal line.

[0024] According to some embodiments, the quantum dot patterns and the transparent patterns may be alternately arranged in the first direction and the second direction.

[0025] According to some embodiments, the display device may further include a scattering pattern on the transparent pattern and a color filter on the quantum dot pattern. The quantum dot pattern may include a green quantum dot pattern and a red quantum dot pattern. The color filter may include a green color filter and a red color filter.

[0026] According to some embodiments, the display device may further include a first color filter on the transparent pattern and a second color filter on the quantum dot pattern, and the first and second color filters may have different colors. [Effects of the Invention]

[0027] The display device according to the present invention can exhibit high light efficiency, high color reproduction, and high resolution through the quantum dot pattern, transparent pattern, and reflective pattern.

[0028] The method for manufacturing a display device according to the present invention can manufacture a display device exhibiting high light efficiency, high color reproducibility, and high resolution by forming a transparent pattern and then forming a reflective pattern. [Brief explanation of the drawings]

[0029] [Figure 1] 1 is a plan view of a display device according to some embodiments of the present invention; [Figure 2A] FIG. 2 is a plan view of region A in FIG. [Figure 2B] FIG. 2 is a plan view of region A in FIG. [Figure 2C] FIG. 2 is a plan view of region A in FIG. [Figure 3] FIG. 2 is a plan view of the pixel in FIG. [Figure 4A] FIG. 4 is a cross-sectional view taken along line AA' in FIG. [Figure 4B] FIG. 4 is a cross-sectional view taken along line BB' in FIG. [Figure 5A] 1 is a plan view of a pixel that may be included in a display device according to some embodiments of the invention. [Figure 5B] 1 is a plan view of a pixel that may be included in a display device according to some embodiments of the invention. [Figure 5C] 1 is a plan view of a pixel that may be included in a display device according to some embodiments of the invention. [Figure 6] 1 is a plan view of a display device according to some embodiments of the present invention; [Figure 7] FIG. 7 is a plan view of the pixel in FIG. [Figure 8A] FIG. 1 illustrates a method for manufacturing a display device according to some embodiments of the present invention. [Figure 8B] FIG. 1 illustrates a method for manufacturing a display device according to some embodiments of the present invention. [Figure 9A] FIG. 1 illustrates a method for manufacturing a display device according to some embodiments of the present invention. [Figure 9B] FIG. 1 illustrates a method for manufacturing a display device according to some embodiments of the present invention. [Figure 10A] FIG. 1 illustrates a method for manufacturing a display device according to some embodiments of the present invention. [Figure 10B] FIG. 1 illustrates a method for manufacturing a display device according to some embodiments of the present invention. [Figure 11A] FIG. 1 illustrates a method for manufacturing a display device according to some embodiments of the present invention. [Figure 11B] FIG. 1 illustrates a method for manufacturing a display device according to some embodiments of the present invention. [Figure 12A] FIG. 1 illustrates a method for manufacturing a display device according to some embodiments of the present invention. [Figure 12B] FIG. 1 illustrates a method for manufacturing a display device according to some embodiments of the present invention. [Figure 13A] FIG. 1 illustrates a method for manufacturing a display device according to some embodiments of the present invention. [Figure 13B] FIG. 1 illustrates a method for manufacturing a display device according to some embodiments of the present invention. [Figure 14] 1 is a plan view of a display device according to some embodiments of the present invention; [Figure 15A] FIG. 15 is a plan view of region B in FIG. [Figure 15B] FIG. 15 is a plan view of region B in FIG. [Figure 15C] FIG. 15 is a plan view of region B in FIG. [Figure 16] FIG. 15 is a plan view of the pixel in FIG. [Figure 17A] FIG. 17 is a cross-sectional view taken along line AA' in FIG. [Figure 17B] FIG. 17 is a cross-sectional view taken along line BB' in FIG. [Figure 18A] 1 is a plan view of a pixel included in a display device according to some embodiments of the present invention. [Figure 18B] 1 is a plan view of a pixel included in a display device according to some embodiments of the present invention. [Figure 18C] 1 is a plan view of a pixel included in a display device according to some embodiments of the present invention. [Figure 19] 1 is a plan view of a display device according to some embodiments of the present invention; [Figure 20] FIG. 20 is a plan view of the pixel in FIG. [Figure 21A] FIG. 14 illustrates a method for manufacturing a display device according to some embodiments of the present invention. [Figure 21B] FIG. 14 illustrates a method for manufacturing a display device according to some embodiments of the present invention. [Figure 22A] FIG. 14 illustrates a method for manufacturing a display device according to some embodiments of the present invention. [Figure 22B] FIG. 14 illustrates a method for manufacturing a display device according to some embodiments of the present invention. [Figure 23A] FIG. 14 illustrates a method for manufacturing a display device according to some embodiments of the present invention. [Figure 23B] FIG. 14 illustrates a method for manufacturing a display device according to some embodiments of the present invention. [Figure 24A] FIG. 14 illustrates a method for manufacturing a display device according to some embodiments of the present invention. [Figure 24B]FIG. 14 illustrates a method for manufacturing a display device according to some embodiments of the present invention. [Figure 25A] FIG. 14 illustrates a method for manufacturing a display device according to some embodiments of the present invention. [Figure 25B] FIG. 14 illustrates a method for manufacturing a display device according to some embodiments of the present invention. [Figure 26A] FIG. 14 illustrates a method for manufacturing a display device according to some embodiments of the present invention. [Figure 26B] FIG. 14 illustrates a method for manufacturing a display device according to some embodiments of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0030] In order to fully understand the configuration and effects of the present invention, preferred embodiments of the present invention will be described with reference to the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, and can be embodied in various forms and can undergo various modifications. The description of the present embodiments is provided merely to complete the disclosure of the present invention and to fully convey the scope of the invention to those skilled in the art to which the present invention pertains. In the accompanying drawings, the dimensions of the components are shown larger than they actually are for the convenience of explanation, and the proportions of each component may be exaggerated or reduced.

[0031] Like reference numbers throughout the specification refer to substantially like elements.

[0032] In the following description, if not related to the core configuration of the present invention, detailed description of configurations and functions known in the technical field of the present invention may be omitted. The meanings of terms used in this specification should be understood as follows.

[0033] The shapes, sizes, ratios, angles, numbers, etc. disclosed in the drawings of the present invention are merely examples, and the present invention is not limited to the illustrated matters.

[0034] Furthermore, in describing the present invention, if it is determined that a detailed description of related prior art may unnecessarily obscure the gist of the present invention, the detailed description will be omitted.

[0035] When the terms "comprise," "have," "belong to," etc. are used in this specification, other parts may be added unless "only" is used. When an element is expressed in the singular, it also includes the plural unless otherwise expressly stated.

[0036] When interpreting elements, it is understood that a margin of error is included even if there is no other explicit description.

[0037] When describing a positional relationship, for example, when the positional relationship between two parts is described as 'above', 'on top of', 'below', 'to the side', etc., one or more other parts may be located between the two parts unless 'directly' or 'immediately' is used.

[0038] When describing a temporal relationship, for example, when the temporal precedence relationship is described using terms such as 'then', 'after', 'following', 'next', 'before', etc., it can also include cases where the relationship is not consecutive, unless 'immediately' or 'directly' is used.

[0039] Although terms such as "first," "second," etc. are used to describe various components, these components are not limited by these terms. These terms are used merely to distinguish one component from another. Therefore, a first component referred to below may be a second component within the technical concept of the present invention.

[0040] The term "at least one" should be understood to include all combinations that can be presented from one or more of the associated items. For example, "at least one of the first, second, and third items" means not only each of the first, second, and third items, but also all combinations of the first, second, and third items that can be presented from two or more of the first, second, and third items.

[0041] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0042] [Display device] Figure 1 is a plan view of a display device according to some embodiments of the present invention. Figures 2A to 2C are plan views of region A in Figure 1. Figure 3 is a plan view of a pixel in Figure 1. Figure 4A is a cross-sectional view taken along line A-A' in Figure 3. Figure 4B is a cross-sectional view taken along line B-B' in Figure 3.

[0043] 1 to 4B, a display device 1000 may be provided according to some embodiments of the present invention.

[0044] The display device 1000 may include a backplane 100 and pixels 1 a on the backplane 100 .

[0045] The backplane 100 may include silicon and / or glass. The backplane 100 may include a transistor. The backplane 100 may extend in a first direction D1 and a second direction D2 perpendicular to the first direction D1. The backplane 100 may control the brightness of a light source, which will be described later.

[0046] Pixels may be provided on a backplane 100. Referring to FIG. 1, a display device 1000 according to some embodiments of the present invention may include a first pixel 1a as a pixel. Although the first pixel 1a is illustrated as a square, it is not limited thereto. A plurality of first pixels 1a may be provided.

[0047] The first pixel 1a can include subpixels 11, 12, 13, and 14. A plurality of the subpixels 11, 12, and 13 can be provided on the backplane 100. The subpixels 11, 12, 13, and 14 can be square in plan view. Each of the pixels 1 can include four subpixels 11, 12, 13, and 14 arranged in a 2x2 grid pattern.

[0048] The first pixel 1a may include one first subpixel 11, one second subpixel 12, one third subpixel 13, and one fourth subpixel 14. The first subpixel 11 may be a blue subpixel. The second subpixel 12 may be a green subpixel. The third subpixel 13 may be a red subpixel. The fourth subpixel 14 may be a blue subpixel and may have substantially the same configuration as the first subpixel 11. The fourth subpixel 14 may share a driving circuit with the first subpixel 11.

[0049] The first sub-pixel 11 may be adjacent to both the second sub-pixel 12 and the third sub-pixel 13. The fourth sub-pixel 14 may be adjacent to both the second sub-pixel 12 and the third sub-pixel 13. That is, the first sub-pixel 11 and the fourth sub-pixel 14 may be arranged diagonally between the first direction D1 and the second direction D2. The arrangement of the sub-pixels 11, 12, 13, and 14 in the first pixel 1a is not limited to that shown in FIG. 3, and other embodiments will be described later.

[0050] 3, in a plan view, the first sub-pixel 11 may have a first length L1 in the first direction D1 and a second length L2 in the second direction D2. The second sub-pixel 12 may have a third length L3 in the first direction D1 and a second length L2 in the second direction D2. The third sub-pixel 13 may have a first length L1 in the first direction D1 and a fourth length L4 in the second direction D2. The fourth sub-pixel 14 may have a third length L3 in the first direction D1 and a fourth length L4 in the second direction D2.

[0051] A center point, which is a junction of the boundaries of each of the sub-pixels 11, 12, 13, and 14, may be provided within the first pixel 1a. For example, in the case of the first pixel 1a, the center point may be the same as the center of the first pixel 1a or may be provided at the lower right end thereof. That is, for example, the first length L1 may be the same as or greater than the third length L3, and the second length L2 may be the same as or greater than the fourth length L4. The pixels that the display device 1000 can include are not limited to the first pixel 1a of FIG. 3, and other embodiments will be described later.

[0052] The first sub-pixel 11 and the fourth sub-pixel 14 may each include a lower electrode 210, an insulating pattern 220, a first light source 310, an upper electrode 230, an intermediate layer 410, a transparent pattern 510, and a scattering pattern 610.

[0053] The second sub-pixel 12 may include a lower electrode 210 , an insulating pattern 220 , a first light source 310 , an upper electrode 230 , an intermediate layer 410 , a first quantum dot pattern 520 , a reflective pattern 540 , and a first color filter 620 .

[0054] The third sub-pixel 13 may include a lower electrode 210 , an insulating pattern 220 , a first light source 310 , an upper electrode 230 , an intermediate layer 410 , a second quantum dot pattern 530 , a reflective pattern 540 , and a second color filter 630 .

[0055] A bottom electrode 210 may be provided on the backplane 100. A plurality of bottom electrodes 210 may be provided within the first pixel 1a. Each of the sub-pixels 11, 12, 13, and 14 may include one bottom electrode 210. The bottom electrode 210 may serve to reflect light from the first light source 310 upward. The bottom electrode 210 may be, for example, a positive electrode.

[0056] The lower electrode 210 may include an electrode material. The electrode material may include a metal, for example, at least one of silver (Ag), aluminum (Al), molybdenum (Mo), cobalt (Co), copper (Cu), gold (Au), platinum (Pt), tungsten (W), chromium (Cr), magnesium (Mg), or lithium (Li), or a combination thereof.

[0057] The lower electrode 210 may further include a transparent conductive material, which can improve the charge injection characteristics and light efficiency of the lower electrode 210. The transparent conductive material may include at least one of a transition metal oxide, a metal nitride, indium tin oxide, aluminum doped zinc oxide, or a combination thereof.

[0058] The transition metal oxide may include, for example, at least one of molybdenum oxide (MoO), vanadium oxide (VO), tungsten oxide (WO), nickel oxide (NiO), or rhenium oxide (ReO), or a combination thereof. The metal nitride may include, for example, titanium nitride (TiN).

[0059] The lower electrode 210 may further include at least one of a conductive polymer, copper iodide, copper thiocyanate, a graphene thin film, or a combination thereof. The conductive polymer may include at least one of polypyrrole, polyaniline, polythiophene, polysodium allyloxy hydroxypropyl sulfonate, or a combination thereof.

[0060] An insulating pattern 220 may be provided on the backplane 100. The insulating pattern 220 may cover the side surfaces of the bottom electrodes 210. The insulating pattern 220 may cover a portion of the top surface of the bottom electrodes 210. The insulating pattern 220 may be interposed between the bottom electrodes 210.

[0061] The insulating pattern 220 may include at least one of an inorganic thin film, an organic thin film, an organic-inorganic composite thin film, or a combination thereof. The thickness of the insulating pattern 220 in the third direction D3, which is perpendicular to the first direction D1 and the second direction D2, may be 10 to 3,000 nm. When the insulating pattern 220 is an inorganic thin film, the thickness of the insulating pattern 220 in the third direction D3 may be 10 to 500 nm. When the insulating pattern 220 is an organic thin film or an organic-inorganic composite thin film, the thickness of the insulating pattern 220 in the third direction D3 may be 100 to 3,000 nm.

[0062] The inorganic thin film may include, but is not limited to, at least one of silicon oxide (SiO), silicon nitride (SiN), silicon oxynitride (SiON), aluminum oxide (AlO), or hafnium oxide (HfO), or a combination thereof. Examples of the organic thin film include, but are not limited to, at least one of polyvinyl chloride (PVC) resin, vinyl acetate (VA) resin, polystyrene (PS) resin, polyamide (PA) resin, polyimide (PI) resin, methacrylic acid (MAA) resin, melamine resin, polyurethane (PU) resin, polyethylene resin, ethylene vinyl copolymer (EVC) resin, polypropylene (PP), polyester resin, acrylic resin, nylon, polycarbonate (PC) resin, cellulose, or a combination thereof. The organic-inorganic composite thin film may include, but is not limited to, at least one of hexamethyldisiloxane, polysilazane, polysiloxane, polysilsesquioxane, or a combination thereof.

[0063] A first light source 310 may be provided on the lower electrode 210. An upper electrode 230 may be provided on the first light source 310. The first light source 310 may be a blue light source.

[0064] For example, the first light source 310 may include a hole injection layer, a hole transport layer, a color emitting layer, an electron transport layer, and an electron injection layer. For example, the color emitting layer may be a blue emitting layer. The first light source 310 may further include a charge generation layer. The lower electrode 210, the first light source 310, and the upper electrode 230 may form a color organic light emitting diode (OLED), for example, a blue organic light emitting diode. The upper electrode 230 may serve to transmit light emitted from the first light source 310.

[0065] The electrode material may include a metal, for example, at least one of silver (Ag), aluminum (Al), molybdenum (Mo), cobalt (Co), copper (Cu), gold (Au), platinum (Pt), tungsten (W), chromium (Cr), magnesium (Mg), or lithium (Li), or a combination thereof. The upper electrode 230 may include an electrode material. The upper electrode 230 may be, for example, a negative electrode.

[0066] The upper electrode 230 may further include a transparent conductive material, which can improve the charge injection characteristics and light efficiency of the upper electrode 230. The transparent conductive material may include at least one of a transition metal oxide, a metal nitride, indium tin oxide, aluminum doped zinc oxide, or a combination thereof.

[0067] The transition metal oxide may include, for example, molybdenum oxide (MoO), vanadium oxide (VO), tungsten oxide (WO), nickel oxide (NiO), rhenium oxide (ReO), or a combination thereof. The metal nitride may include, for example, titanium nitride (TiN).

[0068] The upper electrode 230 may further include at least one of a conductive polymer, copper iodide, copper thiocyanate, a graphene thin film, or a combination thereof. The conductive polymer may include at least one of polypyrrole, polyaniline, polythiophene, polysodium allyloxy hydroxypropyl sulfonate, or a combination thereof.

[0069] An intermediate layer 410 may be provided on the upper electrode 230. The intermediate layer 410 may include at least one of an inorganic thin film, an organic thin film, an organic-inorganic composite thin film, or a combination thereof. The intermediate layer 410 may have a single-layer structure or a multi-layer structure. The inorganic thin film may include, for example, but is not limited to, at least one of silicon oxide (SiO), silicon nitride (SiN), silicon oxynitride (SiON), aluminum oxide (AlO), hafnium oxide (HfO), or a combination thereof. Examples of the organic thin film include, but are not limited to, at least one of polyvinyl chloride (PVC) resin, vinyl acetate (VA) resin, polystyrene (PS) resin, polyamide (PA) resin, polyimide (PI) resin, methacrylic acid (MAA) resin, melamine resin, polyurethane (PU) resin, polyethylene resin, ethylene vinyl copolymer (EVC) resin, polypropylene (PP), polyester resin, acrylic resin, nylon, polycarbonate (PC) resin, cellulose, or a combination thereof. The organic-inorganic composite thin film may include, but is not limited to, at least one of hexamethyldisiloxane, polysilazane, polysiloxane, polysilsesquioxane, or a combination thereof.

[0070] A transparent pattern 510 may be provided on the intermediate layer 410. Specifically, the transparent pattern 510 may be provided on the intermediate layer 410 of the first sub-pixel 11 and the fourth sub-pixel 14.

[0071] A plurality of transparent patterns 510 may be provided, and each of the plurality of transparent patterns 510 may be in contact with or connected to one another. In a plan view, the transparent patterns 510 may be arranged in a zigzag pattern in a diagonal direction between the first direction D1 and the second direction D2. The width of the lower surface 510L of the transparent pattern 510 in the first direction D1 or the second direction D2 may be the same as or greater than the width of the upper surface 510U. The thickness of the transparent pattern 510 in the third direction D3 may be 1 μm to 20 μm.

[0072] The transparent pattern 510 may be transparent, and thus the transparent pattern 510 may emit light of a specific wavelength emitted from the first light source 310 as it is.

[0073] The transparent pattern 510 may include at least one of an inorganic thin film, an organic thin film, an organic-inorganic composite thin film, or a combination thereof. The transparent pattern 510 may have a single-layer structure or a multi-layer structure. The inorganic thin film may include, but is not limited to, at least one of silicon oxide (SiO), silicon nitride (SiN), silicon oxynitride (SiON), aluminum oxide (AlO), hafnium oxide (HfO), or a combination thereof. Examples of the organic thin film include, but are not limited to, at least one of polyvinyl chloride (PVC) resin, vinyl acetate (VA) resin, polystyrene (PS) resin, polyamide (PA) resin, polyimide (PI) resin, methacrylic acid (MAA) resin, melamine resin, polyurethane (PU) resin, polyethylene resin, ethylene vinyl copolymer (EVC) resin, polypropylene (PP), polyester resin, acrylic resin, nylon, polycarbonate (PC) resin, cellulose, or a combination thereof. The organic-inorganic composite thin film may include, but is not limited to, at least one of hexamethyldisiloxane, polysilazane, polysiloxane, polysilsesquioxane, or a combination thereof.

[0074] Quantum dot patterns 520 and 530 may be provided on the intermediate layer 410. A plurality of quantum dot patterns 520 and 530 may be provided and may be spaced apart from each other. Specifically, a first quantum dot pattern 520 may be provided in the second sub-pixel 12, and a second quantum dot pattern 530 may be provided in the third sub-pixel 13. The first quantum dot pattern 520 may be a green quantum dot pattern, and the second quantum dot pattern 530 may be a red quantum dot pattern.

[0075] Each of the quantum dot patterns 520, 530 may be spaced apart from the transparent pattern 510 in the first direction D1 or the second direction D2. In a plan view, the quantum dot patterns 520, 530 may be alternately arranged with the transparent pattern 510 in the first direction D1 or the second direction D2. In a plan view, the first quantum dot pattern 520 and the second quantum dot pattern 530 may be arranged in a zigzag pattern in a diagonal direction between the first direction D1 and the second direction D2. The width of the upper surface 520U, 530U of the quantum dot patterns 520, 530 in the first direction D1 or the second direction D2 may be equal to or greater than the width of the lower surface 520L, 530L.

[0076] Each of the first and second quantum dot patterns 520 and 530 can include quantum dots. The quantum dots included in the first quantum dot pattern 520 can convert the wavelength of light emitted from the first light source 310 to a green light wavelength. The quantum dots included in the second quantum dot pattern 530 can convert the wavelength of light emitted from the first light source 310 to a red light wavelength. The color to which the quantum dots convert the wavelength of light emitted from the first light source 310 can vary depending on the size of the quantum dots.

[0077] The quantum dots can include at least one of a II-VI compound, a III-V compound, a IV-VI compound, a I-III-VI compound, a Group IV element, or a Group IV compound, or a combination thereof.

[0078] The II-VI compound can include at least one of a II-VI binary compound, a II-VI ternary compound, or a II-VI quaternary compound, or a combination thereof. The II-VI binary compound can include at least one of CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe, MgSe, or MgS, or a combination thereof. The II-VI ternary compound can include at least one of CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, or MgZnS, or a combination thereof. The II-VI tetraelement compound can include at least one of HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, or HgZnSTe, or combinations thereof.

[0079] The III-V compound may include at least one of a III-V binary compound, a III-V ternary compound, or a III-V quaternary compound, or a combination thereof. The III-V binary compound may include at least one of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, or InSb, or a combination thereof. The III-V ternary compound may include at least one of GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNPs, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNPs, InNAs, InNSb, InPAs, InPSb, or GaAlNPs, or a combination thereof. The III-V quaternary compound can include at least one of GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, or InAlPSb, or a combination thereof.

[0080] The IV-VI compound can include at least one of a IV-VI binary compound, a IV-VI ternary compound, or a IV-VI quaternary compound, or a combination thereof. The IV-VI binary compound can include at least one of SnS, SnSe, SnTe, PbS, PbSe, or PbTe, or a combination thereof. The IV-VI ternary compound can include at least one of SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, or SnPbTe, or a combination thereof. The IV-VI quaternary compound can include at least one of SnPbSSe, SnPbSeTe, or SnPbSTe, or a combination thereof.

[0081] The I-III-VI compound may include at least one of a I-III-VI ternary compound, a I-III-VI quaternary compound, or a combination thereof. The I-III-VI ternary compound may include at least one of AgInS, AgInSe, AgInTe, CuInS, CuInSe, or CuInTe, or a combination thereof. The I-III-VI quaternary compound may include at least one of AgInSeS, AgInSeTe, AgInGaS, AgInGaSe, CuInSeS, CuInSeTe, CuInGaS, or CuInGaSe, or a combination thereof.

[0082] The group IV element can include at least one of C, Si, or Ge, or a combination thereof. The group IV compound can include at least one of SiC, or SiGe, or a combination thereof.

[0083] The quantum dot may include a core, which may include at least one of the compounds described above, i.e., a II-VI compound, a III-V compound, a IV-VI compound, a I-III-VI compound, a Group IV element, or a Group IV compound, or a combination thereof. The quantum dot may further include a shell, for example.

[0084] A reflective pattern 540 may be provided on the intermediate layer 410. The reflective pattern 540 may be interposed between the transparent pattern 510 and the quantum dot patterns 520 and 530. The reflective pattern 540 may cover the side of the transparent pattern 510. The reflective pattern 540 may cover the side of the quantum dot patterns 520 and 530.

[0085] The reflective pattern 540 may include at least one of a metal element, a metal alloy, a transition metal oxide, a metal nitride, or an inorganic thin film, or a combination thereof. For example, the metal element may include at least one of Ag, Al, Mo, Co, W, Ti, Cu, Ta, Ni, Pt, Nb, Cr, Mg, Li, Sc, Ce, Gd, Sm, V, or Fe, or a combination thereof. Examples of metal alloys include Al / Cr, Al / Co, Al / Cu, Al / Mg, Al / Ni, Al / Sc, Al / Si / Cu, Al / Si, Al / Ti, Al / Ce, Ce / Gd, Ce / Sm, Co / Ni / Cr, Cu / Ge, Cu / In, Cu / Zn, Fe / Mn, Mn / Cu, Mn / Ni, Ni / Cr / Al, Si / Cr / Si, Ni / Zr, Sc / Al, Sn / Zn, Ti / Al / V, or Zn / Sn, or combinations thereof. Examples of transition metal oxides include molybdenum oxide (MoOx), vanadium oxide (VOx), tungsten oxide (WOx), nickel oxide (NiOx), or rhenium oxide (ReOx), or combinations thereof. Examples of metal nitrides include titanium nitride (TiN). The inorganic thin film may include, for example, at least one of silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy), aluminum oxide (AlOx), hafnium oxide (HfOx), or hexamethyldisiloxane, or a combination thereof.

[0086] A scattering pattern 610 may be provided on the transparent pattern 510. A plurality of scattering patterns 610 may be provided within the first pixel 1a. Specifically, the scattering patterns 610 may be provided on the transparent patterns 510 of the first sub-pixel 11 and the fourth sub-pixel 14. That is, the scattering patterns 610 may be arranged in a zigzag pattern in a diagonal direction between the first direction D1 and the second direction D2.

[0087] The scattering pattern 610 may include a scattering agent. The scattering agent may include at least one of titanium oxide (TiO), zinc oxide (ZnO), tin oxide (SnO), silicon oxide (SiO), nickel oxide (NiO), magnesium oxide (MgO), zirconium oxide (ZrO), barium titanate (BaTiO), silicon carbide (SiC), boron nitride (BN), aluminum nitride (AlN), gallium nitride (GaN), zinc sulfide (ZnS), copper chloride (CuCl), strontium titanate (SrTiO), or lithium niobate (LiNbO), or a combination thereof. The scattering agent may include particles of the aforementioned compounds, and the particle diameter may be 10 nm to 700 nm, or 100 nm to 300 nm. The scattering pattern 610 may change the distribution of the backlight emitted by the first light source 310, ultimately increasing the light extraction efficiency and improving the brightness of the display device 1000.

[0088] Color filters 620 and 630 may be provided on the quantum dot patterns 520 and 530. Specifically, a first color filter 620 may be provided on the first quantum dot pattern 520 of the second sub-pixel 12, and a second color filter 630 may be provided on the second quantum dot pattern 530 of the third sub-pixel 13. The first color filter 620 may be a green color filter. That is, the first color filter 620 may selectively transmit green light. The second color filter 630 may be a red color filter. That is, the second color filter 630 may selectively transmit red light. The first color filter 620 and the second color filter 630 absorb undesired light that is not absorbed by the first quantum dot pattern 520 and the second quantum dot pattern 530, thereby improving the color reproduction ratio of the display device 1000.

[0089] Hereinafter, pixels having other configurations that may be included in the display device 1000 according to some embodiments of the present invention will be described.

[0090] 5A to 5C are plan views of pixels that may be included in display devices according to some embodiments of the invention.

[0091] The first pixel 1a of FIG. 5A includes the same sub-pixels 11, 12, 13, and 14 as the sub-pixels 11, 12, 13, and 14 included in the first pixel 1a of FIGS. 1 and 3, but the second length L2 may be smaller than the fourth length L4.

[0092] The first pixel 1a of FIG. 5B includes the same sub-pixels 11, 12, 13, and 14 as the sub-pixels 11, 12, 13, and 14 included in the first pixel 1a of FIGS. 1 and 3, but the first length L1 may be smaller than the third length L3.

[0093] The first pixel 1a of FIG. 5C includes the same sub-pixels 11, 12, 13, and 14 as the sub-pixels 11, 12, 13, and 14 included in the first pixel 1a of FIGS. 1 and 3, but the first length L1 may be smaller than the third length L3, and the second length L2 may be smaller than the fourth length L4.

[0094] The center point may vary depending on the luminous efficiency of the first light source 310 and the luminous efficiency of the quantum dot pattern 520. The relationship between the first length L1 and the third length L3 and the relationship between the second length L2 and the fourth length L4 may be independent.

[0095] The display device 1000 according to the present invention can have high color gamut by preventing color mixing through the reflective pattern 540 interposed between the transparent pattern 510 and the quantum dot patterns 520 and 530. The provision of color filters 620 and 630 on the quantum dot patterns 520 and 530 contributes to high color gamut. The provision of a plurality of transparent patterns 510 in a zigzag pattern along a diagonal line between the first direction D1 and the second direction D2 can improve process convenience. Furthermore, high light efficiency can be achieved by adjusting the lengths L1, L2, L3, and L4 of the sub-pixels 11, 12, 13, and 14 in the first direction D1 and / or the second direction D2 according to the light emission efficiency of the first light source 310 and the light conversion efficiency of the quantum dot patterns 520 and 530.

[0096] 6 is a plan view of a display device according to some embodiments of the present invention, and FIG. 7 is a plan view of a pixel of FIG.

[0097] 6 and 7, a display device 1100 according to some embodiments of the present invention may be provided. The display device 1100 may include a plurality of second pixels 1b.

[0098] The second pixel 1b may include the same subpixels 11, 12, 13, and 14 as the first pixel 1a. The arrangement of the subpixels in the second pixel 1b may be different from that in the first pixel 1a. Referring to FIG. 7, the first subpixel 11 and the second subpixel 12 may be adjacent to each other in the second direction D2, and the first subpixel 11 and the third subpixel 13 may be adjacent to each other in the first direction D1.

[0099] [Display device manufacturing method] Hereinafter, a method for manufacturing a display device according to some embodiments of the present invention will be described.

[0100] FIG. 8A illustrates a method for manufacturing the display device of FIG. 1 according to some embodiments of the present invention.

[0101] A method for manufacturing a display device 1000 according to some embodiments of the present invention may include forming a backplane 100 (S11), forming a first light source 310 on the backplane 100 (S12), forming a barrier layer (not shown) on the first light source 310 (S13), etching at least a portion of the barrier layer (not shown) to form a transparent pattern 510 (S14), forming a first trench T1 by forming the transparent pattern 510, and forming a reflective pattern 540 surrounding a side of the transparent pattern 510 (S15), forming a second trench T2 by forming the reflective pattern 540, and filling the second trench T2 with a quantum dot material to form quantum dot patterns 520 and 530 (S16), forming a scattering pattern 610 on the transparent pattern 510 (S17), and forming color filters 620 and 630 on the quantum dot patterns 520 and 530 (S18).

[0102] FIG. 8B illustrates a method for manufacturing the display device of FIG. 1 according to some embodiments of the present invention.

[0103] 8B together with FIG. 8A, forming scattering pattern 610 on transparent pattern 510 (S17) and forming color filters 620 and 630 on quantum dot patterns 520 and 530 (S18) can be performed in any order. That is, color filters 620 and 630 may be formed after scattering pattern 610 is formed as shown in FIG. 6A, or scattering pattern 610 may be formed after color filters 620 and 630 are formed as shown in FIG. 6B.

[0104] 9A to 13B illustrate a method for manufacturing the display device of FIG. 1 according to some embodiments of the present invention.

[0105] 9A and 9B, a backplane 100 can be formed. The backplane 100 can be formed through a complementary metal oxide semiconductor (CMOS) process and / or a thin film transistor (TFT) process.

[0106] A bottom electrode 210 may be formed on the backplane 100. The bottom electrode 210 may be formed by a sputtering process, a thermal deposition process, a chemical vapor deposition (CVD) process, an atomic layer deposition (ALD) process, a spin coating process, a bar coating process, a blade coating process, plating, a slit coating process, a slot die coating process, and / or a printing process.

[0107] An insulating pattern 220 may be formed on the backplane 100. The insulating pattern 220 may be interposed between the lower electrodes 210. For example, forming the insulating pattern 220 may include forming an insulating layer (not shown) and selectively etching the insulating layer (not shown).

[0108] A first light source 310 may be formed on the lower electrode 210. Forming the first light source 310 may include sequentially forming a hole injection layer, a hole transport layer, a color emitting layer, an electron transport layer, and an electron injection layer. The first light source 310 may be formed, for example, through a thermal evaporation process.

[0109] The upper electrode 230 may be formed on the first light source 310. The upper electrode 230 may be formed by a sputtering process, a thermal deposition process, a chemical vapor deposition (CVD) process, an atomic layer deposition (ALD) process, a spin coating process, a bar coating process, a blade coating process, a plating process, a slit coating process, a slot die coating process, and / or a printing process.

[0110] An intermediate layer 410 may be formed on the upper electrode 230. Forming the intermediate layer 410 may include depositing at least one material selected from the group consisting of the inorganic thin film, the organic thin film, and the organic-inorganic composite thin film.

[0111] 10A and 10B, a barrier layer 511 may be formed on the intermediate layer 410. The barrier layer 511 may cover an upper surface of the intermediate layer 410. Forming the barrier layer 511 may include depositing at least one material selected from the group consisting of the inorganic thin film, the organic thin film, and the organic-inorganic composite thin film.

[0112] 11A and 11B, at least a portion of the barrier rib layer 511 may be removed to form a transparent pattern 510.

[0113] A plurality of transparent patterns 510 may be provided. A first trench T1 may be formed between the transparent patterns 510. The first trench T1 may expose the top surface of the intermediate layer 410. The width of the first trench T1 in the first direction D1 or the second direction D2 may be constant or may become narrower as it approaches the backplane 100.

[0114] Removing at least a portion of the barrier layer 511 may include, for example, etching a portion of the barrier layer 511 and / or developing a portion of the barrier layer 511.

[0115] 12A and 12B, a reflective pattern 540 may be formed on a side surface of a transparent pattern 510. The reflective pattern 540 may cover the side surface of the transparent pattern 510.

[0116] The second trenches T2 may be formed by forming the reflective patterns 540. The second trenches T2 may expose the top surface of the intermediate layer 410. The second trenches T2 may be interposed between the transparent patterns 510 spaced apart from each other, and may be interposed between the reflective patterns 540 spaced apart from each other. The width of the second trenches T2 may be the same as or smaller than the width of the first trenches T1. The width of the second trenches T2 in the first direction D1 or the second direction D2 may be constant or narrower as they approach the backplane 100.

[0117] Forming the reflective pattern 540 may include, for example, forming a reflective layer (not shown) on the top surface of the transparent pattern 510, the side surfaces of the transparent pattern 510, and the top surface of the intermediate layer 410, and etching the reflective layer (not shown) formed on the top surface of the transparent pattern 510 and the top surface of the intermediate layer 410.

[0118] 13A and 13B, a first quantum dot pattern 520 may be formed on the intermediate layer 410 of the second sub-pixel 12. A second quantum dot pattern 530 may be formed on the intermediate layer 410 of the third sub-pixel 13. The first quantum dot pattern 520 and the second quantum dot pattern 530 may be formed regardless of the order in which they are formed.

[0119] Forming the first quantum dot pattern 520 may, for example, include selectively filling the second trench T2 of the second sub-pixel 12 with the quantum dot material. Selectively filling the second trench T2 of the second sub-pixel 12 with the quantum dot material may be performed, for example, through a photolithography process. Forming the second quantum dot pattern 530 may, for example, include selectively filling the second trench T2 of the third sub-pixel 13 with the quantum dot material. Selectively filling the second trench T2 of the third sub-pixel 13 with the quantum dot material may be performed, for example, through a photolithography process.

[0120] The quantum dot material may include quantum dots, the description of which is the same as that given above.

[0121] 4A and 4B, a scattering pattern 610 may be formed on a transparent pattern 510. A first color filter 620 may be formed on a first quantum dot pattern 520. A second color filter 630 may be formed on a second quantum dot pattern 530. The scattering pattern 610, the first color filter 620, and the second color filter 630 may be formed regardless of the order in which they are formed.

[0122] Forming the scattering pattern 610 may, for example, include selectively depositing the scattering pattern 610 on the transparent pattern 510. Forming the first color filter 620 may, for example, include selectively depositing the first color filter 620 on the first quantum dot pattern 520. Forming the second color filter 630 may, for example, include selectively depositing the second color filter 630 on the second quantum dot pattern 530. Forming the scattering pattern 610, forming the first color filter 620, and forming the second color filter 630 may, for example, be performed through a photolithography process.

[0123] The manufacturing method of the display devices 1000 and 1100 according to the present invention forms the transparent patterns 510 arranged in a zigzag pattern in the diagonal direction between the first direction D1 and the second direction D2, and then forms the reflective patterns 540, thereby preventing light from mixing and achieving a high color reproduction rate.

[0124] [Display device] Hereinafter, a display device according to another embodiment of the present invention will be described.

[0125] Figure 14 is a plan view of a display device according to some embodiments of the present invention. Figures 15A to 15C are plan views of region B of Figure 14. Figure 16 is a plan view of a pixel of Figure 14. Figure 17A is a cross-sectional view taken along line A-A' in Figure 16. Figure 17B is a cross-sectional view taken along line B-B' in Figure 16.

[0126] 14 to 17B, a display device 2000 may be provided according to some embodiments of the present invention.

[0127] The display device 2000 may include a backplane 100 and pixels 2 a on the backplane 100 .

[0128] Pixels may be provided on a backplane 100. Referring to Figure 14, a display device 2000 according to some embodiments of the present invention may include a third pixel 2a as a pixel. The third pixel 2a may include four sub-pixels 11, 12, 13, and 14 arranged in a 2x2 grid.

[0129] The third pixel 2a may include one fifth subpixel 21, one sixth subpixel 22, one seventh subpixel 23, and one eighth subpixel 24. The fifth subpixel 21 may be a red subpixel. The sixth subpixel 22 may be a green subpixel. The seventh subpixel 23 may be a blue subpixel. The eighth subpixel 24 may be a red subpixel and may have substantially the same configuration as the fifth subpixel 21. The eighth subpixel 24 may share a driving circuit with the fifth subpixel 21.

[0130] The fifth sub-pixel 21 may be adjacent to both the sixth sub-pixel 22 and the seventh sub-pixel 23. The eighth sub-pixel 24 may be adjacent to both the sixth sub-pixel 22 and the seventh sub-pixel 23. That is, the fifth sub-pixel 21 and the eighth sub-pixel 24 may be arranged diagonally between the first direction D1 and the second direction D2. The arrangement of the sub-pixels 21, 22, 23, and 24 in the third pixel 2a is not limited to that shown in FIG. 16 , and other embodiments will be described later.

[0131] In a plan view, the fifth subpixel 21 may have a fifth length L5 in the first direction D1 and a sixth length L6 in the second direction D2. The sixth subpixel 22 may have a seventh length L7 in the first direction D1 and a sixth length L6 in the second direction D2. The seventh subpixel 23 may have a fifth length L5 in the first direction D1 and an eighth length L8 in the second direction D2. The eighth subpixel 24 may have a seventh length L7 in the first direction D1 and an eighth length L8 in the second direction D2.

[0132] A center point, which is a junction of the boundaries of each of the sub-pixels 21, 22, 23, and 24, may be provided within the third pixel 2a. For example, in the case of the third pixel 1a, the center point may be the same as the center thereof or may be provided at the lower right end thereof. That is, for example, the fifth length L5 may be the same as or greater than the seventh length L7, and the sixth length L6 may be the same as or greater than the eighth length L8. The pixels that the display device 2000 can include are not limited to the third pixel 2a of FIG. 16 , and other embodiments will be described later.

[0133] The fifth sub-pixel 21 and the eighth sub-pixel 24 may include a lower electrode 210, an insulating pattern 220, a second light source 320, an upper electrode 230, an intermediate layer 410, a second quantum dot pattern 530, a reflective pattern 540, and a second color filter 630.

[0134] The sixth sub-pixel 22 may include a lower electrode 210 , an insulating pattern 220 , a second light source 320 , an upper electrode 230 , an intermediate layer 410 , a transparent pattern 510 , a reflective pattern 540 , and a first color filter 620 .

[0135] The seventh sub-pixel 23 may include a lower electrode 210 , an insulating pattern 220 , a second light source 320 , an upper electrode 230 , an intermediate layer 410 , a transparent pattern 510 , a reflective pattern 540 , and a third color filter 640 .

[0136] A backplane 100 may be provided, and a bottom electrode 210 and an insulating pattern 220 may be provided on the backplane 100 .

[0137] A second light source 320 may be provided on the lower electrode 210. An upper electrode 230 may be provided on the second light source 320. The second light source 320 may be a blue-green light source.

[0138] For example, the light source may include a hole injection layer, a hole transport layer, a color emitting layer, an electron transport layer, and an electron injection layer. For example, the color emitting layer may be a blue and green emitting layer. The light source 320 may further include a charge generation layer. The lower electrode 210, the light source 320, and the upper electrode 230 may form a color organic light emitting diode (OLED), for example, a blue and green organic light emitting diode.

[0139] An intermediate layer 410 may be provided on the upper electrode 230. A transparent pattern 510 may be provided on the intermediate layer 410. Specifically, the transparent pattern 510 may be provided on the intermediate layer 410 of the sixth sub-pixel 22 and the seventh sub-pixel 23. A plurality of transparent patterns 510 may be provided, and the transparent patterns 510 may contact or be connected to each other. In a plan view, the transparent patterns 510 may be arranged in a zigzag pattern in a diagonal direction between a first direction D1 and a second direction D2.

[0140] Quantum dot patterns 530 may be provided on the intermediate layer 410. A plurality of quantum dot patterns 530 may be provided and may be spaced apart from each other. Specifically, second quantum dot patterns 530 may be provided in the fifth and eighth sub-pixels 21 and 24, and the second quantum dot patterns 530 may be red quantum dot patterns. The quantum dots included in the second quantum dot patterns 530 may convert the wavelength of light emitted from the second light source 320 to the wavelength of red light. Each quantum dot pattern 530 may be spaced apart from the transparent pattern 510 in a first direction D1 or a second direction D2. In a plan view, the quantum dot patterns 530 may be arranged in a zigzag pattern diagonally from each other.

[0141] A reflective pattern 540 may be provided on the intermediate layer 410. The reflective pattern 540 may be interposed between the transparent pattern 510 and the quantum dot pattern 530. The reflective pattern 540 may cover the side of the transparent pattern 510. The reflective pattern 540 may cover the side of the quantum dot pattern 530.

[0142] Color filters 620 and 640 may be provided on the transparent pattern 510. Specifically, a first color filter 620 may be provided on the transparent pattern 510 of the sixth sub-pixel 22, and a third color filter 640 may be provided on the transparent pattern 510 of the seventh sub-pixel 23. The first color filter 620 may be a green color filter, and the third color filter 640 may be a blue color filter. That is, the first color filter 620 may absorb blue light from the blue-green light emitted from the second light source 320 and selectively transmit green light. The third color filter 640 may absorb green light from the blue-green light emitted from the second light source 320 and selectively transmit blue light.

[0143] A color filter 630 may be provided on the quantum dot pattern 530. Specifically, a second color filter 630 may be provided on the second quantum dot pattern 530, and the second color filter 630 may be a red color filter. That is, the second color filter 630 can selectively transmit red light. The second color filter 630 absorbs undesired light that is not absorbed by the second quantum dot pattern 530, thereby improving the color reproduction rate of the display device 2000.

[0144] The display device 2000 according to the present invention can have high color gamut by preventing color mixing of light through the reflective pattern 540 interposed between the transparent pattern 510 and the quantum dot pattern 530. The color filter 630 provided on the quantum dot pattern 530 can further contribute to high color gamut. The transparent patterns 510 are provided diagonally between the first direction D1 and the second direction D2, improving process convenience. Furthermore, the lengths L5, L6, L7, and L8 of the sub-pixels 21, 22, 23, and 24 in the first direction D1 and / or the second direction D2 can be adjusted according to the light emission efficiency of the light source 320 and the light conversion efficiency of the quantum dot pattern 530, thereby achieving high light efficiency.

[0145] Hereinafter, pixels having other configurations that may be included in the display device 2000 according to some embodiments of the present invention will be described.

[0146] 18A to 18C are plan views of pixels included in a display device according to some embodiments of the present invention.

[0147] The third pixel 2a of FIG. 18A includes the same sub-pixels 11, 12, 13, and 14 as the sub-pixels 11, 12, 13, and 14 included in the third pixel 2a of FIGS. 14 and 16, but the sixth length L6 may be shorter than the eighth length L8.

[0148] The third pixel 2a of FIG. 18B includes the same sub-pixels 11, 12, 13, and 14 as the sub-pixels 11, 12, 13, and 14 included in the third pixel 2a of FIGS. 14 and 16, but the fifth length L5 may be smaller than the seventh length L7.

[0149] The third pixel 3a of FIG. 18C includes the same sub-pixels 11, 12, 13, and 14 as the sub-pixels 11, 12, 13, and 14 included in the third pixel 2a of FIGS. 14 and 16, but the fifth length L5 may be smaller than the seventh length L7, and the sixth length L6 may be smaller than the eighth length L8.

[0150] The center point may vary depending on the luminous efficiency of the second light source 320 and the luminous efficiency of the quantum dot pattern 530. The magnitude relationship between the fifth length L5 and the seventh length L7 and the magnitude relationship between the sixth length L6 and the eighth length L8 may be independent.

[0151] The display device 2000 according to the present invention can have high color gamut by preventing color mixing through the reflective pattern 540 interposed between the transparent pattern 510 and the quantum dot pattern 530. The color filter 630 provided on the quantum dot pattern 530 contributes to high color gamut. The transparent patterns 510 are provided in a zigzag pattern along a diagonal line between the first direction D1 and the second direction D2, enhancing process convenience. Furthermore, the lengths L5, L6, L7, and L8 of the sub-pixels 11, 12, 13, and 14 in the first direction D1 and / or the second direction D2 can be adjusted according to the light emission efficiency of the second light source 320 and the light conversion efficiency of the quantum dot pattern 530, thereby achieving high light efficiency.

[0152] Figure 19 is a plan view of a display device according to some embodiments of the present invention, and Figure 20 is a plan view of a pixel of Figure 19.

[0153] 19 and 20, a display device 2100 according to some embodiments of the present invention may be provided. The display device 2100 may include a plurality of fourth pixels 2b.

[0154] The fourth pixel 2b may have the same subpixels 21, 22, 23, and 24 as the third pixel 2a. The arrangement of the subpixels in the fourth pixel 2b may be different from that in the third pixel 2a. Referring to FIG. 20, the fifth subpixel 21 and the sixth subpixel 22 may be adjacent to each other in the second direction D2, and the fifth subpixel 21 and the seventh subpixel 23 may be adjacent to each other in the first direction D1.

[0155] [Display device manufacturing method] Hereinafter, a method for manufacturing a display device according to some embodiments of the present invention will be described.

[0156] FIG. 21A illustrates a method for manufacturing the display device of FIG. 14 according to some embodiments of the present invention.

[0157] A method for manufacturing a display device 2000 according to some embodiments of the present invention may include forming a backplane 100 (S11), forming a second light source 320 on the backplane 100 (S'12), forming a barrier layer (not shown) on the second light source 320 (S'13), etching at least a portion of the barrier layer (not shown) to form a transparent pattern 510 (S'14), forming the transparent pattern 510 to form a third trench T3, and forming a reflective pattern 540 surrounding the side of the transparent pattern 510 (S'15), forming the reflective pattern 540 to form a fourth trench T4, and filling the fourth trench T4 with a quantum dot material to form a quantum dot pattern 530 (S'16), forming color filters 620 and 640 on the transparent pattern 510 (S19), and forming a color filter 630 on the quantum dot pattern 530 (S20).

[0158] FIG. 21B illustrates a method for manufacturing the display device of FIG. 14 according to some embodiments of the present invention.

[0159] 21B together with FIG. 21A, the formation of color filters 620 and 640 on transparent pattern 510 (S19) and the formation of color filter 630 on quantum dot pattern 530 (S20) can be performed in any order. That is, as shown in FIG. 21A, the second color filter 630 can be formed after the first and third color filters 620 and 640 are formed, or as shown in FIG. 21B, the first and third color filters 620 and 640 can be formed after the second color filter 630 is formed.

[0160] 22A to 26B illustrate a method for manufacturing the display device of FIG. 14 according to some embodiments of the present invention.

[0161] 22A and 22B, a backplane 100 may be formed. A lower electrode 210 may be formed on the backplane 100. An insulating pattern 220 may be formed on the backplane 100.

[0162] A second light source 320 may be formed on the lower electrode 210. Forming the second light source 320 may include sequentially forming a hole injection layer, a hole transport layer, a color emitting layer, an electron transport layer, and an electron injection layer. The second light source 320 may be formed through a thermal evaporation process.

[0163] The upper electrode 230 may be formed on the second light source 320. The intermediate layer 410 may be formed on the upper electrode 230.

[0164] 23A and 23B, a barrier layer 511 may be formed on the intermediate layer 410.

[0165] 24A and 24B, at least a portion of the barrier rib layer 511 may be removed to form a transparent pattern 510.

[0166] A plurality of transparent patterns 510 may be provided. Third trenches T3 may be formed between the transparent patterns 510. The third trenches T3 may expose the top surface of the intermediate layer 410. The width of the third trenches T3 in the first direction D1 or the second direction D2 may be constant or may become narrower as they approach the backplane 100.

[0167] Removing at least a portion of the barrier layer 511 may include, for example, etching at least a portion of the barrier layer 511 and / or developing at least a portion of the barrier layer 511.

[0168] 25A and 25B, a reflective pattern 540 may be formed on a side surface of a transparent pattern 510. The reflective pattern 540 may cover the side surface of the transparent pattern 510.

[0169] The formation of the reflective pattern 540 may form a fourth trench T4. The fourth trench T4 may expose the top surface of the intermediate layer 410. The fourth trench T4 may be interposed between the transparent patterns 510 spaced apart, or may be interposed between the reflective patterns 540 spaced apart. The width of the fourth trench T4 may be the same as or smaller than the width of the third trench T3. The width of the fourth trench T4 in the first direction D1 or the second direction D2 may be constant or narrower as it approaches the backplane 100.

[0170] Forming the reflective pattern 540 may include, for example, forming a reflective layer (not shown) on the top surface of the transparent pattern 510, the side surfaces of the transparent pattern 510, and the top surface of the intermediate layer 410, and etching the reflective layer (not shown) formed on the top surface of the transparent pattern 510 and the top surface of the intermediate layer 410.

[0171] 26A and 26B, a second quantum dot pattern 530 may be formed on the intermediate layer 410 of the fifth sub-pixel 21 and the eighth sub-pixel 24.

[0172] For example, forming the second quantum dot pattern 530 may include selectively filling the fourth trenches T4 of the fifth sub-pixel 21 and the eighth sub-pixel 24 with quantum dots. Filling the fourth trenches T4 with quantum dots may include forming a quantum dot layer (not shown) on the top surface of the intermediate layer 410, the side surfaces of the reflective pattern 540, and the top surface of the transparent pattern 510, and etching the quantum dot layer (not shown). For example, etching the quantum dot layer (not shown) may include planarizing the quantum dot layer (not shown). Planarizing the quantum dot layer (not shown) may be performed until the top surface of the transparent pattern 510 is exposed.

[0173] 17A and 17B, color filters 620 and 640 may be formed on the transparent pattern 510. Specifically, the first color filter 620 may be formed on the transparent pattern 510 of the sixth sub-pixel 22. The third color filter 640 may be formed on the transparent pattern 510 of the seventh sub-pixel 23. The second color filter 630 may be formed on the second quantum dot pattern 530. The first color filter 620, the second color filter 630, and the third color filter 640 may be formed regardless of the order in which they are formed.

[0174] Forming the first color filter 620 may, for example, include selectively depositing the first color filter 620 on the transparent pattern 510 of the sixth sub-pixel 22. Forming the second color filter 630 may, for example, include selectively depositing the second color filter 630 on the quantum dot patterns 530 of the fifth sub-pixel 21 and the eighth sub-pixel 24. Forming the third color filter 640 may, for example, include selectively depositing the third color filter 640 on the transparent pattern 510 of the seventh sub-pixel 23. Forming the first color filter 620, forming the second color filter 630, and forming the third color filter 640 may, for example, be performed through a photolithography process.

[0175] The method for manufacturing the display device 2000 according to the present invention forms the transparent patterns 510 arranged in a zigzag pattern in the diagonal direction between the first direction D1 and the second direction D2, and then forms the reflective patterns 540, thereby preventing light color mixing and achieving a high color reproduction rate.

[0176] Although the present invention has been described above with reference to the accompanying drawings, it should be understood that the present invention may be embodied in other specific forms without changing the technical spirit or essential features thereof. Therefore, it should be understood that the above-described embodiments are illustrative in all respects and are not limiting. [Explanation of symbols]

[0177] 1a pixel 11, 12, 13, 14 subpixels 100 Backplane 210 Lower electrode 220 Insulation Pattern 230 Upper electrode 310 1st light source 410 Middle Class 510 Transparent Pattern 520, 530 quantum dot pattern 540 Reflective Pattern 610 Scattering Pattern 620,630 color filters

Claims

1. a backplane; a light source on the backplane; a quantum dot pattern on the light source; a transparent pattern disposed on the light source and spaced apart from the quantum dot pattern in a first direction parallel to an upper surface of the backplane; a reflective pattern between the quantum dot pattern and a transparent pattern.

2. The display device according to claim 1 , wherein the transparent pattern comprises at least one of an inorganic thin film, an organic thin film, an organic-inorganic composite thin film, or a combination thereof.

3. the quantum dot pattern includes quantum dots, 2. The display device of claim 1, wherein the quantum dots include at least one of a II-VI compound, a III-V compound, a IV-VI compound, a I-III-VI compound, a Group IV element, or a Group IV compound, or a combination thereof.

4. 2. The display device according to claim 1, wherein the reflective pattern comprises at least one of a single metal element, a metal alloy, a transition metal oxide, a metal nitride, an inorganic thin film, or a combination thereof.

5. The display device according to claim 1 , wherein the light source is a blue light source.

6. The display device according to claim 1 , wherein the light source is a blue-green light source.

7. a scattering pattern on the transparent pattern; The display device according to claim 1 , further comprising a color filter on the quantum dot pattern.

8. the scattering pattern comprises a scattering agent; The scattering agent is titanium oxide (TiO ２ ), zinc oxide (ZnO), tin oxide (SnO), silicon oxide (SiO), nickel oxide (NiO), magnesium oxide (MgO), zirconium oxide (ZrO ２ ), barium titanate (BaTiO ３ ), silicon carbide (SiC), boron nitride (BN), aluminum nitride (AlN), gallium nitride (GaN), zinc sulfide (ZnS), copper chloride (CuCl), strontium titanate (SrTiO ３ ), or lithium niobate (LiNbO ３ 8. The display device according to claim 7, comprising at least one of:

9. a blue color filter on the transparent pattern; a green color filter on the transparent pattern; The display device of claim 1 , further comprising: a red color filter on the quantum dot pattern.

10. The quantum dot pattern and the transparent pattern are provided in plural, The display device of claim 1 , wherein the quantum dot patterns and the transparent patterns are alternately arranged in the first direction.

11. The display device of claim 1 , wherein the width of the upper surface of the transparent pattern in the first direction is equal to or greater than the width of the lower surface.

12. The display device of claim 1 , wherein the quantum dot pattern has a width of a lower surface in the first direction that is equal to or greater than a width of an upper surface.

13. The quantum dot patterns are provided in a plurality and spaced apart from one another; The display device according to claim 1 , wherein the quantum dot patterns are arranged in a zigzag pattern on a diagonal line between the first direction and a second direction perpendicular to the first direction.

14. a backplane; a plurality of pixels on the backplane; Each of the plurality of pixels includes a first sub-pixel and a second sub-pixel, The first sub-pixel is a quantum dot pattern on the backplane; a reflective pattern surrounding the side of the quantum dot pattern; a first color filter on the quantum dot pattern; the second sub-pixel includes a transparent pattern on the backplane; The quantum dot pattern and the transparent pattern are spaced apart from each other via the reflective pattern.

15. The display device of claim 14 , wherein the second sub-pixel further comprises a scattering pattern on the transparent pattern.

16. the second sub-pixel further includes a second color filter on the transparent pattern; The display device of claim 14 , wherein the first color filter and the second color filter have different colors.

17. a backplane; a light source on the backplane; a quantum dot pattern on the light source; a transparent pattern disposed on the light source and spaced apart from the quantum dot pattern in a first direction parallel to an upper surface of the backplane; a reflective pattern between the quantum dot pattern and a transparent pattern, The quantum dot pattern is Provided in multiple locations, spaced apart, are arranged in a zigzag pattern on a diagonal line between the first direction and a second direction perpendicular to the first direction, The reflection pattern is Provided in multiple locations, spaced apart, are arranged in a zigzag pattern on the diagonal line, The transparent pattern is A plurality of the plates are provided, and the lower surfaces of the plates are connected to each other. A display device whose upper surface is arranged in a zigzag pattern on the diagonal line.

18. The display device of claim 17 , wherein the quantum dot patterns and the transparent patterns are alternately arranged in the first direction and the second direction.

19. a scattering pattern on the transparent pattern; a color filter on the quantum dot pattern; the quantum dot patterns include a green quantum dot pattern and a red quantum dot pattern; The display device of claim 17 , wherein the color filters include a green color filter and a red color filter.

20. a first color filter on the transparent pattern; a second color filter on the quantum dot pattern; The display device of claim 17 , wherein the first color filter and the second color filter have different colors.

Images