Photoelectric conversion device and method for manufacturing the same

Abstract

To provide a technique to facilitate a process of forming an opening that penetrates a semiconductor substrate from the back side, in a photoelectric conversion device having a pad opening reaching an electrode pad through the semiconductor substrate and a through electrode connected to wiring through the semiconductor substrate, and a method for manufacturing the same.SOLUTION: A method for manufacturing a photoelectric conversion device includes the steps of: forming a photoelectric conversion part on a first substrate; forming first wiring on a first surface side of the first substrate; forming a pinning layer on a second surface of the first substrate to be a light receiving surface of the photoelectric conversion part; forming a first opening in the pinning layer; forming an insulating layer on the pinning layer and in the first opening; and forming a second opening penetrating the insulating layer and first substrate to reach the first wiring, in an area inside the first opening in plan view.SELECTED DRAWING: Figure 3

Description

[Technical Field]

[0001] The present invention relates to a photoelectric conversion device and a method for manufacturing the same. [Background technology]

[0002] In photoelectric conversion devices such as solid-state imaging devices, a so-called back-illuminated structure has been proposed in which a driving circuit is formed on the front side of a semiconductor substrate and the back side is used as the light-receiving surface in order to improve photoelectric conversion efficiency and sensitivity to incident light. Also proposed is a stacked photoelectric conversion device in which a circuit board on which a driving circuit is formed is prepared separately from a semiconductor substrate on which a photoelectric conversion unit is provided, and the circuit board is attached to the surface of the semiconductor substrate opposite the light-receiving surface. These photoelectric conversion devices may have openings that penetrate the semiconductor substrate on which the photoelectric conversion unit is provided and reach electrode pads on the front side of the semiconductor substrate or wiring on the circuit board. Patent Document 1 discloses a solid-state imaging device having pad openings that penetrate the semiconductor substrate from the light-receiving surface side to reach electrode pads, and through-electrodes that penetrate the semiconductor substrate from the light-receiving surface side to connect to wiring, and a method for manufacturing the same. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2013-084763 Summary of the Invention [Problem to be solved by the invention]

[0004] However, in the above-described conventional solid-state imaging device and its manufacturing method, problems may occur due to the process of forming an opening that penetrates the semiconductor substrate.

[0005] An object of the present invention is to provide a technology for facilitating the process of forming an opening that penetrates a semiconductor substrate in a photoelectric conversion device having a pad opening that penetrates a semiconductor substrate to reach an electrode pad, or a through electrode that penetrates a semiconductor substrate and is connected to wiring. [Means for solving the problem]

[0006] According to one disclosure of the present specification, there is provided a method for manufacturing a photoelectric conversion device, comprising the steps of: forming a photoelectric conversion section on a first substrate; forming a first wiring on the first surface side of the first substrate; forming a pinning layer on a second surface of the first substrate, which is the light-receiving surface of the photoelectric conversion section; forming a first opening in the pinning layer; forming an insulating layer on the pinning layer and within the first opening; and forming a second opening in a region inside the first opening in a planar view, the second opening penetrating the insulating layer and the first substrate and reaching the first wiring.

[0007] Furthermore, according to another disclosure of this specification, there is provided a photoelectric conversion device having a first substrate having a first surface and a second surface and provided with a photoelectric conversion section with the second surface as a light-receiving surface, a first wiring provided on the first surface side of the first substrate, a pinning layer provided on the second surface of the first substrate and having a first opening, an insulating layer provided on the pinning layer and within the first opening, and a second opening provided in a region inside the first opening in a planar view, penetrating the insulating layer and the first substrate to reach the first wiring. [Effects of the Invention]

[0008] According to the present invention, in a photoelectric conversion device having a pad opening that penetrates a semiconductor substrate to reach an electrode pad or a through electrode that penetrates a semiconductor substrate to be connected to wiring, and in a method for manufacturing the same, the process of forming an opening that penetrates a semiconductor substrate from the back surface side can be facilitated. [Brief explanation of the drawings]

[0009] [Figure 1] 1 is a block diagram showing a schematic configuration of a photoelectric conversion device according to a first embodiment. [Figure 2] 1 is a schematic diagram illustrating an example of the configuration of a photoelectric conversion device according to a first embodiment. [Figure 3]1 is a schematic cross-sectional view showing the structure of a photoelectric conversion device according to a first embodiment. [Figure 4] 2 is a plan view of the periphery of a pad opening in the photoelectric conversion device according to the first embodiment. FIG. [Figure 5] 3A to 3C are cross-sectional views (part 1) illustrating steps in a method for manufacturing the photoelectric conversion device according to the first embodiment. [Figure 6] 5A to 5C are cross-sectional views (part 2) illustrating the steps of the method for manufacturing the photoelectric conversion device according to the first embodiment. [Figure 7] 5A to 5C are cross-sectional views (part 3) illustrating the steps of the method for manufacturing the photoelectric conversion device according to the first embodiment. [Figure 8] 4A to 4C are cross-sectional views (part 4) illustrating the steps of the method for manufacturing the photoelectric conversion device according to the first embodiment. [Figure 9] 5A to 5C are cross-sectional views (part 5) illustrating the steps of the method for manufacturing the photoelectric conversion device according to the first embodiment. [Figure 10] 6A to 6C are cross-sectional views illustrating the steps of the method for manufacturing the photoelectric conversion device according to the first embodiment. [Figure 11] 7A to 7C are cross-sectional views (part 7) illustrating the steps of the method for manufacturing the photoelectric conversion device according to the first embodiment. [Figure 12] 8A to 8C are cross-sectional views (part 8) illustrating the steps of the method for manufacturing the photoelectric conversion device according to the first embodiment. [Figure 13] FIG. 4 is a schematic cross-sectional view showing the structure of a photoelectric conversion device according to a second embodiment. [Figure 14] 10A to 10C are cross-sectional views (part 1) illustrating steps in a method for manufacturing a photoelectric conversion device according to a second embodiment. [Figure 15] 10A to 10C are cross-sectional views (part 2) illustrating the steps of the method for manufacturing the photoelectric conversion device according to the second embodiment. [Figure 16] FIG. 10 is a schematic cross-sectional view showing the structure of a photoelectric conversion device according to a third embodiment. [Figure 17] FIG. 10 is a plan view of the periphery of a pad opening in a photoelectric conversion device according to a third embodiment. [Figure 18] FIG. 10 is a block diagram showing a schematic configuration of a photoelectric conversion system according to a fourth embodiment. [Figure 19]FIG. 10 is a diagram illustrating an example of the configuration of a photoelectric conversion system and a moving object according to a fifth embodiment. [Figure 20] FIG. 13 is a block diagram showing a schematic configuration of a device according to a sixth embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0010] [First embodiment] A photoelectric conversion device according to a first embodiment of the present invention will be described with reference to Figs. 1 to 4. Fig. 1 is a block diagram showing a schematic configuration of a photoelectric conversion device according to this embodiment. Fig. 2 is a perspective view showing an example of the configuration of a photoelectric conversion device according to this embodiment. Fig. 3 is a schematic cross-sectional view showing the structure of a photoelectric conversion device according to this embodiment. Fig. 4 is a plan view of the periphery of a pad opening of a photoelectric conversion device according to this embodiment.

[0011] The photoelectric conversion device 100 according to this embodiment may include, for example, as shown in FIG. 1, a pixel region 10, a vertical scanning circuit section 20, a readout circuit section 30, a horizontal scanning circuit section 40, a signal processing circuit section 50, an output circuit section 60, and a control circuit section 70.

[0012] The pixel region 10 has a plurality of pixels 12 arranged in a matrix across a plurality of rows and a plurality of columns. Each pixel 12 has a photoelectric conversion element such as a photodiode, and outputs a pixel signal corresponding to the amount of incident light. The number of rows and columns of the pixel array arranged in the pixel region 10 is not particularly limited. In addition to effective pixels that output pixel signals corresponding to the amount of incident light, the pixel region may also include optical black pixels whose photoelectric conversion units are shielded from light, dummy pixels that do not output signals, and the like.

[0013] In each row of the pixel array that constitutes the pixel region 10, a control line 14 is arranged extending in a first direction (the horizontal direction in FIG. 1). Each of the control lines 14 is connected to the pixels 12 aligned in the first direction and serves as a signal line common to these pixels 12. The first direction in which the control lines 14 extend is sometimes referred to as the row direction or horizontal direction. The control lines 14 are connected to a vertical scanning circuit unit 20. The control lines 14 in each row may include multiple signal lines.

[0014] In each column of the pixel array constituting the pixel region 10, an output line 16 is arranged, extending in a second direction (vertical direction in FIG. 1) intersecting the first direction. The output line 16 in each column is connected to the pixels 12 aligned in the second direction, and serves as a common signal line for these pixels 12. The second direction in which the output lines 16 extend is sometimes referred to as the column direction or vertical direction. The output line 16 is connected to a readout circuit unit 30.

[0015] The vertical scanning circuit unit 20 has a function of receiving control signals from the control circuit unit 70, generating control signals for driving the pixels 12, and outputting them to the pixels 12 via the control lines 14. The vertical scanning circuit unit 20 may use logic circuits such as a shift register or an address decoder. The vertical scanning circuit unit 20 sequentially drives the pixels 12 in the pixel region 10 row by row by sequentially outputting control signals to the control lines 14 of each row. The signals read out from the pixels 12 row by row are input in parallel to the readout circuit unit 30 via output lines 16 arranged in each column of the pixel region 10.

[0016] The readout circuit unit 30 performs predetermined signal processing on pixel signals output from the pixels 12 via the output lines 16, and serves to store the processed pixel signals in memory for each column. Examples of signal processing performed by the readout circuit unit 30 include amplification and AD conversion.

[0017] The horizontal scanning circuit unit 40 receives control signals from the control circuit unit 70, generates control signals for reading out pixel signals from the memory of each column of the readout circuit unit 30, and outputs the control signals to the readout circuit unit 30. The horizontal scanning circuit unit 40 sequentially outputs control signals to the memory of each column of the readout circuit unit 30, causing the pixel signals held therein to be sequentially output to the signal processing circuit unit 50. The horizontal scanning circuit unit 40 may include logic circuits such as a shift register and an address decoder.

[0018] The signal processing circuit unit 50 has a role of performing predetermined signal processing on the signal output from the readout circuit unit 30. Examples of processing performed by the signal processing circuit unit 50 include amplification processing and digital correlated double sampling (CDS) processing.

[0019] The output circuit unit 60 serves to output the signal processed by the signal processing circuit unit 50 to the outside of the photoelectric conversion device 100. The external interface circuit included in the output circuit unit 60 is not particularly limited. For example, a SerDes (SERializer / DESerializer) transmission circuit can be applied to the external interface circuit. The SerDes transmission circuit is, for example, an LVDS (Low Voltage Differential Signaling) circuit or an SLVS (Scalable Low Voltage Signaling) circuit.

[0020] The control circuit unit 70 has a role of supplying control signals that control the operations and timings of the vertical scanning circuit unit 20, the readout circuit unit 30, and the horizontal scanning circuit unit 40. Note that all of these control signals do not necessarily have to be supplied from the control circuit unit 90, and at least some of these control signals may be supplied from outside the photoelectric conversion device 100.

[0021] The photoelectric conversion device 100 of this embodiment may be configured such that all of the above-described functional blocks are arranged on a single substrate, or may be configured as a stacked photoelectric conversion device in which the above-described functional blocks are separately formed on multiple substrates and these substrates are bonded together and electrically connected. In this embodiment, for example, as shown in FIG. 2, the photoelectric conversion device 100 is configured by stacking and bonding two substrates (a first substrate 110 and a second substrate 150). However, the number of substrates constituting the photoelectric conversion device 100 is not necessarily limited to two, and may be three or more.

[0022] Of the above-mentioned functional blocks, for example, the plurality of pixels 12 constituting the pixel region 10 can be arranged on the first substrate 110. Of the above-mentioned functional blocks, for example, functional blocks other than the plurality of pixels 12 in the pixel region 10 can be arranged on the second substrate 150. By arranging the pixels 12 and other components on separate substrates, it is possible to achieve miniaturization and high functionality of the photoelectric conversion device 100 without sacrificing the light receiving area of ​​the pixels 12.

[0023] A plurality of electrode pads 160 for electrical connection between the photoelectric conversion device 100 and an external power supply or other devices are provided on the periphery of the second substrate 150. Pad openings 192 for exposing the electrode pads 160 when the first substrate 110 is stacked on the second substrate 150 are provided on the first substrate 110 and the second substrate 150. In this case, electrical connection to the electrode pads 160 from outside is made via these pad openings 192.

[0024] Next, a more detailed structure of the photoelectric conversion device 100 according to this embodiment will be described with reference to FIGS.

[0025] As shown in FIG. 3 , the photoelectric conversion device 100 includes a first substrate 110 and a second substrate 150. The first substrate 110 includes a semiconductor substrate 112 having a first surface 114 and a second surface 116, and a wiring structure layer 148 provided on the first surface 114. The first surface 114 is the front surface of the semiconductor substrate 112 on which predetermined elements such as transistors and photodiodes are provided. The second substrate 150 includes a semiconductor substrate 152 having a first surface 154 and a second surface 156, and a wiring structure layer 172 provided on the first surface 154. The first surface 154 is the front surface of the semiconductor substrate 152 on which predetermined elements such as transistors are provided. The first substrate 110 and the second substrate 150 are bonded face-to-face so that the first surface 114 and the first surface 154 face each other. The interface between wiring structure layer 148 and wiring structure layer 172 is a bonding surface 174 between first substrate 110 and second substrate 150 .

[0026] The semiconductor substrate 112 is formed by thinning a semiconductor substrate made of, for example, single-crystal silicon. The semiconductor substrate 112 may be provided with a plurality of pixels 12 constituting the pixel region 10. Each of the plurality of pixels 12 includes a photoelectric conversion element such as a photodiode and a transistor for controlling the exposure period of the photoelectric conversion element and the readout of a signal based on the charge generated by the photoelectric conversion element. These elements are provided on the first surface 114 of the semiconductor substrate 112. FIG. 3 shows, as an example of an element constituting the pixel 12, a transistor having a gate electrode 122 and impurity regions 124 serving as source / drain regions. The semiconductor substrate 112 is also provided with isolation structures 118 and 120. The isolation structure 118 serves to isolate elements from each other. The isolation structure 120 is provided integrally with the isolation structure 118 so as to penetrate the semiconductor substrate 112 and serves to isolate the element formation region of the semiconductor substrate 112 from the outside.

[0027] A wiring structure layer 148 is provided on the first surface 114 of the semiconductor substrate 112, and includes multiple wiring layers disposed within an insulating layer. FIG. 3 illustrates the wiring structure layer 148 as a multilayer wiring including six wiring layers. The first to fifth wiring layers from the semiconductor substrate 112 side include wiring 132. The topmost (sixth) wiring layer, which is the farthest from the semiconductor substrate 112, includes wiring 146. The first-layer wiring 132 is connected to the semiconductor substrate 112 and the gate electrode 122 via contact vias 130. The wiring 132 on different levels and the wiring 132 and the wiring 146 are electrically connected to each other via wiring vias 134. The number of wiring layers constituting the wiring structure layer 148 is not limited to six and can be increased or decreased as appropriate. The wiring 132 and the wiring 146 can be formed of a conductive film mainly made of a metal material such as copper or aluminum. The top surface of the wiring structure layer 148 is formed by the insulating layer 142 and the wiring 146. This uppermost surface becomes the bonding surface 174 with the second substrate 150.

[0028] The semiconductor substrate 152 is a semiconductor substrate made of, for example, single crystal silicon. As described above, the semiconductor substrate 152 may be provided with driving circuits such as the vertical scanning circuit unit 20, readout circuit unit 30, horizontal scanning circuit unit 40, signal processing circuit unit 50, output circuit unit 60, and control circuit unit 70. Elements constituting these circuits are provided on the first surface 154 side of the semiconductor substrate 152. In FIG. 3, these elements are not shown to simplify the drawing.

[0029] A wiring structure layer 172 is provided on the first surface 154 of the semiconductor substrate 152, and the wiring structure layer 172 is made up of multiple wiring layers disposed within an insulating layer. For simplicity of illustration, FIG. 3 shows only the wiring layer including the electrode pad 160 and the uppermost wiring layer including the wiring 170 among the wiring layers constituting the wiring structure layer 172. The number of wiring layers constituting the wiring structure layer 172 is not particularly limited. Wirings at different levels are electrically connected to each other via wiring vias 168. The wiring 170 and the electrode pad 160 may be made of a conductive film mainly made of a metal material such as copper or aluminum. The uppermost surface of the wiring structure layer 172 is made up of the insulating layer 166 and the wiring 170. This uppermost surface serves as a bonding surface 174 with the first substrate 110.

[0030] A pinning layer 176, an insulating layer 180, a light-shielding film 182, a planarization layer 184, an insulating layer 186, and a microlens 188 are provided on the second surface 116 of the semiconductor substrate 112 in this order. The pinning layer 176 serves to suppress dark current through defects (interface states) in the surface portion of the semiconductor substrate 112 and may be made of, for example, aluminum oxide (Al2O3) or tantalum oxide (Ta2O5). The light-shielding film 182 has an opening in a portion corresponding to the pixel region 10. The light-shielding film 182 may be electrically connected to the semiconductor substrate 112 through a wiring via (not shown). If necessary, a trench pattern may be formed in the planarization layer 184 to form a light-shielding portion that separates pixels. Light detected by the photoelectric conversion element of the pixel 12 is incident on the second surface 116 side of the semiconductor substrate 112 via the microlens 188. That is, the photoelectric conversion device 100 of this embodiment is a back-illuminated photoelectric conversion device in which the back surface (second surface 116) of the semiconductor substrate 112 serves as a light-receiving surface. For convenience, the laminated structure from the insulating layer 180 to the microlenses 188 may be referred to as an optical structure layer 190 in this specification. The optical structure layer 190 may further include other optical members such as a color filter.

[0031] In a plan view, a pad opening 192 is provided in the arrangement region of the electrode pad 160, penetrating the insulating layer 186, the planarizing layer 184, the insulating layer 180, the semiconductor substrate 112, the wiring structure layer 148, and a portion of the wiring structure layer 172 to reach the electrode pad 160. The pinning layer 176 also has an opening 178 in the arrangement region of the electrode pad 160. FIG. 4 is a plan view in which the electrode pad 160, the pad opening 192, the pinning layer 176, and the opening 178 are projected onto a plane parallel to the second surface 116 of the semiconductor substrate 112. As shown in FIG. 4, the pinning layer 176 has an opening 178 with an opening width larger than that of the pad opening 192. In a plan view, the pad opening 192 is located inside the opening 178. In other words, the pinning layer 176 is not exposed to the inner wall portion of the pad opening 192. In this specification, the term "planar view" refers to a view from the normal direction of the semiconductor substrates 112 and 152.

[0032] Next, a method for manufacturing the photoelectric conversion device according to this embodiment will be described with reference to Figures 5 to 12. Figures 5 to 12 are cross-sectional views showing the steps in the method for manufacturing the photoelectric conversion device according to this embodiment.

[0033] First, a semiconductor substrate 112 having a first surface 114 and a second surface 116' is prepared as the base material of the first substrate 110. Then, an isolation structure 118 for isolating elements is formed on the first surface 114 side of the semiconductor substrate 112 by, for example, STI (Shallow Trench Isolation). Furthermore, as necessary, an isolation structure 120 for isolating an element formation region of the semiconductor substrate 112 from the outside is formed by, for example, DTI (Deep Trench Isolation). The isolation structure 120 is arranged so as to surround the pad opening 192 and the element formation region of the semiconductor substrate 112 in a plan view.

[0034] Next, predetermined elements constituting the pixel region 10, such as photodiodes as photoelectric conversion units and pixel transistors, are formed in the active region of the semiconductor substrate 112 defined by the isolation structures 118 (FIG. 5(a)). FIG. 5(a) shows, as an example of these elements, a transistor having a gate electrode 122 and impurity regions 124 that become source / drain regions.

[0035] Next, interlayer insulating layers and wiring layers are repeatedly formed on the first surface 114 of the semiconductor substrate 112 on which the isolation structures 118, 120 and predetermined elements are provided, thereby forming a multilayer wiring layer including, for example, five wiring layers ( FIG. 5( b)). The wiring 132 constituting each wiring layer may be made of, for example, copper (Cu) or aluminum (Al). The interlayer insulating layer may be formed of a laminated film including an insulating layer 126 made of, for example, silicon carbide and an insulating layer 128 made of, for example, silicon oxide. When the wiring 132 is made of, for example, copper, the insulating layer 126 may function as a diffusion barrier film that prevents copper diffusion. The first-layer wiring 132 may be electrically connected to the semiconductor substrate 112 and the gate electrode 122 through contact vias 130. The first to fifth wiring layers may be electrically connected to each other through wiring vias 134.

[0036] Next, an interlayer insulating layer and a sixth wiring layer are formed on the interlayer insulating layer on which the fifth wiring layer 132 is disposed. The wiring 146 constituting the sixth wiring layer may be made of, for example, copper. The interlayer insulating layer may be formed of a laminated film including an insulating layer 136 made of, for example, silicon carbide, an insulating layer 138 made of, for example, silicon oxide, an insulating layer 140 made of, for example, silicon nitride, and an insulating layer 142 made of, for example, silicon oxide. The insulating layer 142 may function as a protective film to prevent the infiltration of moisture and the like. The insulating layer 142, together with the wiring 146, forms a joint with the second substrate 150. For this purpose, the top surface of the first substrate 110 is composed of the insulating layer 142 and the wiring 146. The wiring 146 may be electrically connected to the underlying wiring layer through wiring vias 144.

[0037] In this way, a wiring structure layer 148 including a total of six wiring layers is formed on the first surface 114 of the semiconductor substrate 112 (FIG. 5(c)). Note that although FIG. 5(c) illustrates the wiring structure layer 148 including six wiring layers, the number of wiring layers constituting the wiring structure layer 148 is not limited to six and can be increased or decreased as appropriate.

[0038] Separately from the first substrate 110, a semiconductor substrate 152 having a first surface 154 and a second surface 156 is prepared as a base material for the second substrate 150. Then, an insulating layer 158 is formed on the first surface 154 side of the semiconductor substrate 152. The insulating layer 158 is provided with elements (not shown) that constitute a predetermined circuit and a wiring layer including an electrode pad 160 (FIG. 6(a)). Note that while FIG. 6(a) shows only the insulating layer 158 and one wiring layer disposed therein, the insulating layer 158 may include two or more wiring layers. Also, although FIG. 6(a) assumes that the electrode pad 160 is formed by the uppermost wiring layer of the wiring layers disposed on the insulating layer 158, the electrode pad 160 does not necessarily have to be formed by the uppermost wiring layer.

[0039] Next, an interlayer insulating layer and a wiring layer disposed therein are formed on the insulating layer 158 on which the wiring layer including the electrode pads 160 is disposed. The wiring 170 constituting the wiring layer may be made of, for example, copper. The interlayer insulating layer may be formed of a laminated film including an insulating layer 162 made of, for example, silicon oxide, an insulating layer 164 made of, for example, silicon nitride, and an insulating layer 166 made of, for example, silicon oxide. The insulating layer 164 may function as a protective film to prevent the infiltration of moisture and the like. The insulating layer 166, together with the wiring 170, forms a joint with the first substrate 110. For this purpose, the top surface of the second substrate 150 is composed of the insulating layer 166 and the wiring 170. The wiring 170 may be electrically connected to the underlying wiring layer through wiring vias 168.

[0040] In this manner, a wiring structure layer 172 including the electrode pads 160 and the wiring 170 is formed on the first surface 154 of the semiconductor substrate 152 (FIG. 6(b)).

[0041] Next, the first substrate 110 and second substrate 150 manufactured in this manner are bonded face-to-face using a substrate bonding technique so that the first surface 114 of the semiconductor substrate 112 faces the first surface 154 of the semiconductor substrate 152. As a result, at the bonding surface 174 between the first substrate 110 and the second substrate 150, the insulating layer 142 and the insulating layer 166 come into contact, and the wiring 146 and the wiring 170 come into contact, and the first substrate 110 and the second substrate 150 are physically and electrically bonded together.

[0042] Next, the semiconductor substrate 112 is thinned by polishing from the second surface 116′ side by, for example, a chemical mechanical polishing (CMP) method. The surface exposed by polishing the second surface 116′ of the semiconductor substrate 112 is the new second surface 116. It is desirable to thin the semiconductor substrate 112 until the second surface 116 reaches the isolation structure 120.

[0043] Next, a pinning layer 176 made of, for example, an aluminum oxide film and / or a tantalum oxide film is formed on the second surface 116 of the semiconductor substrate 112 by, for example, sputtering or CVD (FIG. 7).

[0044] Next, the pinning layer 176 is patterned using photolithography and etching techniques to form an opening 178 in a portion corresponding to a region (shown by a dotted line in FIG. 8) where the pad opening 192 is to be formed (FIG. 8). At this time, the opening width of the opening 178 is made larger than that of the pad opening 192, taking into consideration the tolerance for misalignment when the pad opening 192 is formed, so that the entire pad opening 192 is located inside the opening 178 even when the pad opening 192 is misaligned to the maximum.

[0045] Although Figure 8 illustrates an example in which etching of the opening 178 is stopped at the surface (second surface 116) of the semiconductor substrate 112, etching of the opening 178 may be continued until at least a portion of the semiconductor substrate 112 is removed.

[0046] Next, an insulating material such as silicon oxide is deposited by, for example, CVD, and then the surface is planarized by, for example, CMP, to form an insulating layer 180 made of silicon oxide or the like (FIG. 9).

[0047] Next, a light-shielding material, for example, a metal material such as aluminum is deposited by, for example, sputtering, and then patterned using photolithography and etching techniques to form a light-shielding film 182 (FIG. 10).

[0048] Next, an insulating material such as silicon oxide is deposited by, for example, CVD, and the surface is planarized by, for example, CMP, to form a planarization layer 184 made of silicon oxide. Next, an insulating material such as silicon oxide is deposited by, for example, CVD, to form an insulating layer 186 made of silicon oxide. Next, a microlens 188 is formed on the insulating layer 186 (FIG. 11).

[0049] Next, photoresist (not shown) having an opening in a region where the pad opening 192 is to be formed is formed by photolithography. Next, using this photoresist as a mask, the insulating layer 186, the planarizing layer 184, the insulating layer 180, the wiring structure layer 148, and a portion of the wiring structure layer 172 are etched in order to form the pad opening 192 reaching the electrode pad 160. At this time, the region where the pad opening 192 is to be formed is located inside the opening 178 of the pinning layer 176, and therefore there is no need to remove the pinning layer 176 in the process of forming the pad opening 192. Thereafter, the photoresist used as the mask is removed, thereby completing the photoelectric conversion device of this embodiment ( FIG. 11 ).

[0050] In this embodiment, before forming the pad opening 192, the opening 178 is formed in advance in the pinning layer 176. This is to solve the following problems that may occur when opening the pad opening 192.

[0051] The first problem is that the etching selectivity between the photoresist used to form the pad opening 192 and the pinning layer 176 is small, so the photoresist may be lost when the pinning layer 176 is etched during the process of forming the pad opening 192. If the photoresist is lost, the opening area of ​​the pad opening 192 may become larger than the opening area in the resist pattern. Furthermore, the opening shape may deviate from the expected shape, resulting in etching of areas that should not have been etched. To avoid these problems, the photoresist must be made thicker. However, thickening the photoresist increases the aspect ratio of the photoresist, especially between the pad openings 192, which may cause the photoresist to collapse.

[0052] The second problem is that if the pinning layer 176 is etched during the process of forming the pad opening 192, deposit components generated during etching of the pinning layer 176 and deposit components generated during etching of the planarization layer 184 will be mixed, making peeling and removal difficult in a later process. To avoid this, it is necessary to perform a peeling and removal step after etching of the planarization layer 184 is completed. However, since the peeling and removal step also removes the photoresist, it is necessary to form a new photoresist for etching the pad opening 192 in the peeling and removal step. This can result in disadvantages such as an increase in the number of steps and a decrease in alignment accuracy during patterning.

[0053] The third problem is that when the pinning layer 176 is etched during the process of forming the pad opening 192, the side surfaces of the pinning layer 176 are inclined during selective opening by dry etching, and the opening area of ​​the pad opening 192 becomes smaller than the opening area on the resist pattern.

[0054] In this regard, in the present embodiment, the opening 178 is formed in advance in the pinning layer 176 before the pad opening 192 is formed, and therefore these problems do not occur. Therefore, according to the present embodiment, the photoresist used in forming the pad opening 192 can be made thinner, and the peeling process in the subsequent process is also facilitated. Avoiding the third problem is particularly effective when the opening area of ​​the pad opening 192 is reduced.

[0055] Thus, according to this embodiment, in a photoelectric conversion device having a pad opening that penetrates a semiconductor substrate and reaches an electrode pad, the process of forming an opening that penetrates the semiconductor substrate from the back surface side can be simplified.

[0056] [Second embodiment] A photoelectric conversion device according to a second embodiment of the present invention and a manufacturing method thereof will be described with reference to Figs. 13 to 15. Components similar to those in the photoelectric conversion device according to the first embodiment are given the same reference numerals, and descriptions thereof will be omitted or simplified. Fig. 13 is a schematic cross-sectional view showing the structure of the photoelectric conversion device according to this embodiment. Figs. 14 and 15 are cross-sectional views showing steps in a manufacturing method for the photoelectric conversion device according to this embodiment.

[0057] In the first embodiment, a structure and a manufacturing method suitable for forming the pad opening 192 of a stacked-type photoelectric conversion device were described, but the same structure and manufacturing method can also be applied to a through electrode. In this embodiment, an example of application to a stacked-type photoelectric conversion device having a through electrode is shown.

[0058] As shown in FIG. 13 , the photoelectric conversion device 100 according to this embodiment is similar to the photoelectric conversion device of the first embodiment in that the first substrate 110 and the second substrate 150 are bonded face-to-face. A wiring structure layer 230 is provided on the second surface 116 of the semiconductor substrate 112 via a pinning layer 176. The wiring structure layer 230 includes an insulating layer 232, a wiring layer including wiring 234 disposed in the insulating layer 232, an insulating layer 244 disposed on the insulating layer 232, and a wiring layer including wiring 248 disposed in the insulating layer 244. The wiring 234 and the wiring 248 are electrically connected via a wiring via 246. An optical structure layer 190 (not shown in FIG. 13 ) may be provided on the wiring structure layer 230.

[0059] Bonding surface 174 between first substrate 110 and second substrate 150 is formed by the bond between insulating layer 142 provided on the top surface of wiring structure layer 148 and insulating layer 166 provided on the top surface of wiring structure layer 172. In other words, wiring 170 in the top layer of wiring structure layer 172 does not form bonding surface 174.

[0060] The wiring 170 and the wiring 248 are electrically connected via a through electrode 242 provided to penetrate the insulating layer 232, the first substrate 110, and the insulating layer 166, and a wiring via 246. The through electrode 242 and the first substrate 110 are insulated from each other by an insulating layer 238 provided on the inner wall of the opening 236 in which the through electrode 242 is arranged.

[0061] When providing the through electrode 242 as in the photovoltaic conversion device 100 of this embodiment, the opening 236 in which the through electrode 242 is disposed is provided so as to penetrate the stack including the pinning layer 176, similar to the pad opening 192 of the first embodiment. That is, the opening 236 is formed by forming the pinning layer 176 and the insulating layer 232 on the second surface 116 of the first substrate 110, and then sequentially etching the components up to the wiring 170. Therefore, if etching of the pinning layer 176 is included in this series of etching steps, the same problem as described in the first embodiment may occur. Therefore, also in this embodiment, after forming the pinning layer 176 and before forming the insulating layer 232, an opening 178 is formed in advance in the region of the pinning layer 176 where the opening 236 is to be formed.

[0062] 14 and 15 correspond to cross-sectional views of processes subsequent to the process corresponding to Fig. 7 of the first embodiment. First, a pinning layer 176 made of, for example, an aluminum oxide film and / or a tantalum oxide film is formed by, for example, sputtering or CVD on the second surface 116 of the semiconductor substrate 112 exposed by polishing.

[0063] Next, the pinning layer 176 is patterned using photolithography and etching techniques to form an opening 178 in a portion corresponding to a region where the opening 236 is to be formed. At this time, the opening width of the opening 178 is made larger than that of the opening 236, taking into consideration the tolerance for misalignment when the opening 236 is formed, so that the entire opening 236 is located inside the opening 178 even when the maximum misalignment occurs in the opening 236.

[0064] Next, an insulating material such as silicon oxide is deposited by, for example, CVD, and then the surface is planarized by, for example, CMP, to form an insulating layer 232 made of silicon oxide, etc. Furthermore, if necessary, a wiring layer is formed in the insulating layer 232.

[0065] Next, photoresist (not shown) having an opening in a region where opening 236 is to be formed is formed by photolithography. Next, using this photoresist as a mask, insulating layer 232, first substrate 110, and insulating layer 166 are etched in order to form opening 236 that reaches wiring 170. At this time, the region where opening 236 is to be formed is located inside opening 178 of pinning layer 176, and therefore there is no need to remove pinning layer 176 in the process of forming opening 236. Thereafter, the photoresist used as the mask is removed ( FIG. 14 ).

[0066] Next, an insulating material such as silicon oxide is deposited by, for example, CVD, and then the surface is planarized by, for example, CMP, and the opening 236 is filled with an insulating layer 238 made of silicon oxide or the like.

[0067] Next, the insulating layer 238 is patterned using photolithography and etching techniques to form an opening 240 in the insulating layer 238 that reaches the wiring 170. At this time, the opening 240 is provided so as to penetrate through the central part of the insulating layer 238 in a plan view, and the insulating layer 238 remains on the inner wall part of the opening 236.

[0068] Next, a conductive material such as polycrystalline silicon or metal is deposited by, for example, sputtering or CVD, and then the surface is planarized by, for example, CMP, to form a through electrode 242 embedded in the opening 240 (FIG. 15).

[0069] Next, an insulating material such as silicon oxide is deposited by, for example, CVD to form an insulating layer 244 made of silicon oxide or the like.

[0070] Next, using, for example, a damascene method, a wiring layer having wiring 248 connected to the through electrodes 242 and wiring 234 through wiring vias 246 is formed in the insulating layer 244 (see FIG. 13).

[0071] By forming the opening 178 in the pinning layer 176 in advance, in the step of forming the opening 236, the opening 236 that reaches the wiring 170 can be formed without etching the pinning layer 176, as shown in Fig. 14. Therefore, also in the photoelectric conversion device 100 of this embodiment, the photoresist used to form the opening 236 can be made thin, and a peeling process in a later step becomes easier. Furthermore, the opening area of ​​the opening 236 can be easily reduced.

[0072] Thus, according to this embodiment, in a photoelectric conversion device having a through electrode that penetrates a semiconductor substrate and is connected to wiring, the process of forming an opening that penetrates the semiconductor substrate from the back surface side can be simplified.

[0073] [Third embodiment] A photoelectric conversion device according to a third embodiment of the present invention will be described with reference to Figs. 16 and 17. Components similar to those of the photoelectric conversion device according to the first or second embodiment are given the same reference numerals, and descriptions thereof will be omitted or simplified. Fig. 16 is a schematic cross-sectional view showing the structure of the photoelectric conversion device according to this embodiment. Fig. 17 is a plan view of the periphery of the pad opening of the photoelectric conversion device according to this embodiment.

[0074] The photoelectric conversion device 100 according to this embodiment is similar to the photoelectric conversion device according to the first embodiment except for the size of the opening 178 provided in the pinning layer 176. That is, in the first embodiment, as shown in Figures 3 and 4, the opening 178 is arranged so that the opening 178 is located more inward than the isolation structures 118, 120 surrounding the pad opening 192 in plan view. In contrast, in this embodiment, as shown in Figures 16 and 17, the opening 178 is arranged so that the isolation structures 118, 120 surrounding the pad opening 192 are located more inward than the opening 178 in plan view.

[0075] By arranging the isolation structures 118, 120 surrounding the pad opening 192 inside the opening 178, a portion of the pixel region 10 on the second surface 116 of the semiconductor substrate 112 is covered with the insulating layer 180 instead of the pinning layer 176. In this case, for example, by using a hydrogen occlusion film for the insulating layer 180, hydrogen is supplied to the semiconductor substrate 112 from the portion where the insulating layer 180 and the second surface 116 contact, and hydrogen is terminated on dangling bonds at the interface of the semiconductor substrate 112. This reduces the interface state density of the semiconductor substrate 112, and is expected to improve the signal quality of the photoelectric conversion device.

[0076] As described above, according to this embodiment, in a photoelectric conversion device having a pad opening that penetrates a semiconductor substrate and reaches an electrode pad, the process of forming the opening that penetrates the semiconductor substrate from the back surface side can be simplified, and the signal quality of the photoelectric conversion device can be improved.

[0077] [Fourth embodiment] A photoelectric conversion system according to a fourth embodiment of the present invention will be described with reference to Fig. 18. Fig. 18 is a block diagram showing a schematic configuration of the photoelectric conversion system according to this embodiment.

[0078] The photoelectric conversion device 100 described in the first to third embodiments can be applied to various photoelectric conversion systems. Examples of applicable photoelectric conversion systems include digital still cameras, digital camcorders, surveillance cameras, copiers, fax machines, mobile phones, vehicle-mounted cameras, and observation satellites. Camera modules equipped with an optical system such as a lens and an imaging device are also included in the photoelectric conversion system. Fig. 18 illustrates a block diagram of a digital still camera as an example of such systems.

[0079] 18 includes an imaging device 201, a lens 202 that forms an optical image of a subject on the imaging device 201, an aperture 204 that adjusts the amount of light passing through the lens 202, and a barrier 206 that protects the lens 202. The lens 202 and the aperture 204 form an optical system that focuses light on the imaging device 201. The imaging device 201 is the photoelectric conversion device 100 described in any one of the first to third embodiments, and converts the optical image formed by the lens 202 into image data.

[0080] The photoelectric conversion system 200 also includes a signal processing unit 208 that processes an output signal output from the imaging device 201. The signal processing unit 208 generates image data from a digital signal output by the imaging device 201. The signal processing unit 208 also performs various corrections and compressions as necessary and outputs the image data. The imaging device 201 may include an AD conversion unit that generates a digital signal to be processed by the signal processing unit 208. The AD conversion unit may be formed in a semiconductor layer (semiconductor substrate) on which the photoelectric conversion unit of the imaging device 201 is formed, or may be formed in a semiconductor layer different from the semiconductor layer on which the photoelectric conversion unit of the imaging device 201 is formed. The signal processing unit 208 may also be formed in the same semiconductor layer as the imaging device 201.

[0081] The photoelectric conversion system 200 further includes a memory unit 210 for temporarily storing image data, and an external interface unit (external I / F unit) 212 for communicating with an external computer or the like. The photoelectric conversion system 200 further includes a recording medium 214 such as a semiconductor memory for recording or reading out imaging data, and a recording medium control interface unit (recording medium control I / F unit) 216 for recording or reading out imaging data from the recording medium 214. The recording medium 214 may be built into the photoelectric conversion system 200 or may be detachable.

[0082] Furthermore, the photoelectric conversion system 200 has an overall control / calculation unit 218 that performs various calculations and controls the entire digital still camera, and a timing generation unit 220 that outputs various timing signals to the image capture device 201 and the signal processing unit 208. Here, timing signals and the like may be input from outside, and the photoelectric conversion system 200 only needs to have at least the image capture device 201 and the signal processing unit 208 that processes the output signal output from the image capture device 201.

[0083] The imaging device 201 outputs an imaging signal to the signal processing unit 208. The signal processing unit 208 performs predetermined signal processing on the imaging signal output from the imaging device 201 and outputs image data. The signal processing unit 208 generates an image using the imaging signal.

[0084] As described above, according to this embodiment, a photoelectric conversion system can be realized to which the photoelectric conversion device 100 according to the first to third embodiments is applied.

[0085] [Fifth embodiment] A photoelectric conversion system and a moving object according to a fifth embodiment of the present invention will be described with reference to Fig. 19. Fig. 19 is a diagram showing the configuration of the photoelectric conversion system and a moving object according to this embodiment.

[0086] FIG. 19(a) shows an example of a photoelectric conversion system related to an in-vehicle camera. The photoelectric conversion system 300 includes an image capture device 310. The image capture device 310 is the photoelectric conversion device 100 described in any one of the first to third embodiments. The photoelectric conversion system 300 includes an image processing unit 312 that performs image processing on multiple pieces of image data acquired by the image capture device 310, and a parallax acquisition unit 314 that calculates parallax (phase difference between parallax images) from the multiple pieces of image data acquired by the image capture device 310. The photoelectric conversion system 300 also includes a distance acquisition unit 316 that calculates the distance to an object based on the calculated parallax, and a collision determination unit 318 that determines whether or not there is a possibility of a collision based on the calculated distance. Here, the parallax acquisition unit 314 and the distance acquisition unit 316 are examples of distance information acquisition means that acquire information about the distance to the object. That is, the distance information is information related to the parallax, the defocus amount, the distance to the object, etc. The collision determination unit 318 may determine the possibility of a collision using any of this distance information. The distance information acquisition means may be realized by dedicated hardware, a software module, a field programmable gate array (FPGA), an application specific integrated circuit (ASIC), or a combination thereof.

[0087] The photoelectric conversion system 300 is connected to a vehicle information acquisition device 320 and can acquire vehicle information such as vehicle speed, yaw rate, and steering angle. The photoelectric conversion system 300 is also connected to a control ECU 330, which is a control device that outputs a control signal to generate a braking force for the vehicle based on the determination result of the collision determination unit 318. The photoelectric conversion system 300 is also connected to an alarm device 340 that issues an alarm to the driver based on the determination result of the collision determination unit 318. For example, if the determination result of the collision determination unit 318 indicates a high possibility of a collision, the control ECU 330 performs vehicle control to avoid the collision and mitigate damage by applying the brakes, releasing the accelerator, suppressing engine output, etc. The alarm device 340 warns the user by sounding an alarm, displaying alarm information on a screen such as a car navigation system, or vibrating the seat belt or steering wheel.

[0088] In this embodiment, the surroundings of the vehicle, for example, the front or rear, are imaged by the photoelectric conversion system 300. Fig. 19(b) shows the photoelectric conversion system when imaging the area in front of the vehicle (imaging range 350). The vehicle information acquisition device 320 sends instructions to the photoelectric conversion system 300 or the imaging device 310. This configuration can further improve the accuracy of distance measurement.

[0089] Although the above describes an example of control to prevent collision with other vehicles, the present invention can also be applied to control of automatic driving by following other vehicles, and control of automatic driving to prevent deviation from a lane. Furthermore, the photoelectric conversion system is not limited to vehicles such as the subject vehicle, but can be applied to moving bodies (moving devices) such as ships, aircraft, and industrial robots. In addition, the present invention can be applied not only to moving bodies but also to a wide range of devices that use object recognition, such as intelligent transport systems (ITS).

[0090] [Sixth embodiment] A device according to a sixth embodiment of the present invention will be described with reference to Fig. 20. Fig. 20 is a block diagram showing a schematic configuration of the device according to this embodiment.

[0091] FIG. 20 is a schematic diagram showing equipment EQP including a photoelectric conversion device APR. The photoelectric conversion device APR has the functions of the photoelectric conversion device 100 of any of the first to third embodiments. All or part of the photoelectric conversion device APR is a semiconductor device IC. The photoelectric conversion device APR of this example can be used, for example, as an image sensor, an AF (Auto Focus) sensor, a photometry sensor, or a distance measurement sensor. The semiconductor device IC has a pixel area PX in which pixel circuits PXC, each including a photoelectric conversion unit, are arranged in a matrix. The semiconductor device IC can have a peripheral area PR around the pixel area PX. Circuits other than pixel circuits can be arranged in the peripheral area PR.

[0092] The photoelectric conversion device APR may have a structure (chip stacking structure) in which a first semiconductor chip provided with a plurality of photoelectric conversion units and a second semiconductor chip provided with peripheral circuits are stacked. The peripheral circuits in the second semiconductor chip may be column circuits corresponding to the pixel columns of the first semiconductor chip. The peripheral circuits in the second semiconductor chip may also be matrix circuits corresponding to the pixels or pixel blocks of the first semiconductor chip. The first and second semiconductor chips may be connected by through-silicon vias (TSVs), inter-chip wiring formed by direct bonding of a conductor such as copper, connection by microbumps between chips, connection by wire bonding, or the like.

[0093] The photoelectric conversion device APR may include, in addition to the semiconductor device IC, a package PKG that houses the semiconductor device IC. The package PKG may include a base to which the semiconductor device IC is fixed, a cover such as glass that faces the semiconductor device IC, and connecting members such as bonding wires or bumps that connect terminals provided on the base to terminals provided on the semiconductor device IC.

[0094] The equipment EQP may further include at least one of an optical device OPT, a control device CTRL, a processing device PRCS, a display device DSPL, a memory device MMRY, and a mechanical device MCHN. The optical device OPT corresponds to the photoelectric conversion device APR as a photoelectric conversion device, and is, for example, a lens, a shutter, or a mirror. The control device CTRL controls the photoelectric conversion device APR and is, for example, a semiconductor device such as an ASIC. The processing device PRCS processes signals output from the photoelectric conversion device APR and constitutes an AFE (analog front end) or a DFE (digital front end). The processing device PRCS is a semiconductor device such as a CPU (central processing unit) or an ASIC (application-specific integrated circuit). The display device DSPL is an EL display device or a liquid crystal display device that displays information (images) obtained by the photoelectric conversion device APR. The memory device MMRY is a magnetic device or a semiconductor device that stores information (images) obtained by the photoelectric conversion device APR. The memory device MMRY is a volatile memory such as an SRAM or a DRAM, or a non-volatile memory such as a flash memory or a hard disk drive. The mechanical device MCHN has a moving part or a propulsion part such as a motor or an engine. The device EQP displays the signal output from the photoelectric conversion device APR on a display device DSPL and transmits the signal to the outside using a communication device (not shown) provided in the device EQP. For this purpose, the device EQP preferably further includes a memory device MMRY and a processing device PRCS in addition to the memory circuit unit and arithmetic circuit unit provided in the photoelectric conversion device APR.

[0095] The device EQP shown in FIG. 20 can be an electronic device such as an information terminal with a photographing function (e.g., a smartphone or a wearable device) or a camera (e.g., an interchangeable lens camera, a compact camera, a video camera, or a surveillance camera). The mechanical device MCHN in the camera can drive components of the optical device OPT for zooming, focusing, and shutter operation. The device EQP can also be transportation equipment (moving object) such as a vehicle, a ship, or an aircraft. The device EQP can also be medical equipment such as an endoscope or a CT scanner.

[0096] The mechanical device MCHN in the transportation equipment can be used as a moving device. The device EQP as a transportation equipment is suitable for transporting the photoelectric conversion device APR and for assisting and / or automating driving (piloting) using a photographing function. The processing device PRCS for assisting and / or automating driving (piloting) can perform processing to operate the mechanical device MCHN as a moving device based on information obtained by the photoelectric conversion device APR.

[0097] The photoelectric conversion device APR according to this embodiment can provide high value to its designer, manufacturer, seller, purchaser, and / or user. Therefore, if the photoelectric conversion device APR is installed in a device EQP, the value of the device EQP can also be increased. Therefore, when manufacturing and selling the device EQP, deciding to install the photoelectric conversion device APR according to this embodiment in the device EQP is advantageous in increasing the value of the device EQP.

[0098] [Modified embodiment] The present invention is not limited to the above-described embodiment, and various modifications are possible.

[0099] For example, an example in which part of the configuration of any one of the embodiments is added to another embodiment, or an example in which part of the configuration of another embodiment is substituted therefor, is also an embodiment of the present invention.

[0100] Furthermore, although the first to third embodiments show examples in which the present invention is applied to a back-illuminated photoelectric conversion device, the present invention can be widely applied to photoelectric conversion devices having an opening provided via a pinning layer.

[0101] Furthermore, in the first to third embodiments, a stacked photoelectric conversion device in which a substrate on which pixels are provided and a substrate on which a drive circuit are provided are stacked is shown, but the configuration of the substrates constituting the photoelectric conversion device is not limited to the examples of the above embodiments. For example, the second substrate 150 may be used as a support substrate, and all of the functional blocks constituting the photoelectric conversion device may be disposed on the first substrate 110. Furthermore, a stacked photoelectric conversion device may be configured in which three or more substrates are stacked.

[0102] Furthermore, in the first to third embodiments, examples have been shown in which the wiring 170 to which the electrode pads 160 and the through electrodes 242 are connected is arranged on the side of the second substrate 150, but the wiring to which the electrode pads and the through electrodes are connected may also be arranged on the side of the first substrate 110 (wiring structure layer 148).

[0103] Furthermore, the photoelectric conversion systems shown in the fourth and fifth embodiments are examples of photoelectric conversion systems to which the photoelectric conversion device of the present invention can be applied, and photoelectric conversion systems to which the photoelectric conversion device of the present invention can be applied are not limited to the configurations shown in Figures 18 and 19(a).

[0104] It should be noted that the above-described embodiments are merely examples of specific embodiments for carrying out the present invention, and the technical scope of the present invention should not be construed as being limited by these embodiments. In other words, the present invention can be carried out in various forms without departing from its technical concept or main features.

[0105] The disclosure of the above embodiment includes the following configurations and methods. (Method 1) forming a photoelectric conversion portion on a first substrate; forming a first wiring on a first surface side of the first substrate; forming a pinning layer on a second surface of the first substrate, which serves as a light-receiving surface of the photoelectric conversion unit; forming a first opening in the pinning layer; forming an insulating layer over the pinning layer and in the first opening; forming a second opening portion that penetrates the insulating layer and the first substrate and reaches the first wiring in a region inside the first opening portion in a plan view; A method for manufacturing a photoelectric conversion device, comprising: (Method 2) the first wiring is an electrode pad, The second opening is a pad opening that reaches the electrode pad. 2. The method for producing a photoelectric conversion device according to method 1, (Method 3) forming a through electrode in the second opening, the through electrode being insulated from the first substrate and electrically connected to the first wiring; forming a second wiring electrically connected to the through electrode on the insulating layer; The method for producing a photoelectric conversion device according to Method 1, further comprising: (Method 4) The method further includes forming a first wiring structure layer on the first surface side of the first substrate. 4. The method for producing a photoelectric conversion device according to any one of Methods 1 to 3. (Method 5) The step of forming the first wiring structure layer includes the step of forming the first wiring. Method 5. The method for producing a photoelectric conversion device according to method 4. (Method 6) The method further includes a step of bonding a second substrate having a second wiring structure layer to the first surface side of the first substrate. 5. The method for producing a photoelectric conversion device according to any one of methods 1 to 4. (Method 7) The step of forming the second wiring structure layer includes the step of forming the first wiring. Method 6. The method for producing a photoelectric conversion device according to Method 6. (Method 8) forming an isolation structure on the first substrate; The isolation structure is disposed so as to surround the first opening in a plan view. 8. The method for producing a photoelectric conversion device according to any one of Methods 1 to 7. (Method 9) The isolation structure is disposed so as to surround the second opening in a plan view. Method 9. The method for producing a photoelectric conversion device according to method 8. (Method 10) The separation structure is disposed inside the second opening in a plan view. Method 9. The method for producing a photoelectric conversion device according to method 8. (Configuration 1) a first substrate having a first surface and a second surface, the first substrate having a photoelectric conversion unit with the second surface as a light receiving surface; a first wiring provided on the first surface side of the first substrate; a pinning layer disposed on the second surface of the first substrate and having a first opening; an insulating layer disposed on the pinning layer and in the first opening; a second opening provided in an area inside the first opening in a plan view, penetrating the insulating layer and the first substrate to reach the first wiring; A photoelectric conversion device comprising: (Configuration 2) The pinning layer is not exposed to the second opening. 2. The photoelectric conversion device according to configuration 1, (Configuration 3) the first wiring is an electrode pad, The second opening is a pad opening that reaches the electrode pad. 3. The photoelectric conversion device according to configuration 1 or 2. (Configuration 4) a through electrode provided in the second opening, insulated from the first substrate, and electrically connected to the first wiring; a second wiring provided on the insulating layer and electrically connected to the through electrode; 3. The photoelectric conversion device according to configuration 1 or 2, further comprising: (Configuration 5) The first substrate further includes a first wiring structure layer provided on the first surface side. 5. The photoelectric conversion device according to any one of configurations 1 to 4. (Configuration 6) The first wiring structure layer includes the first wiring. 6. The photoelectric conversion device according to configuration 5. (Configuration 7) The second substrate further includes a second wiring structure layer bonded to the first surface side of the first substrate. 6. The photoelectric conversion device according to any one of configurations 1 to 5. (Configuration 8) The second wiring structure layer includes the first wiring. 8. The photoelectric conversion device according to configuration 7. (Configuration 9) further comprising an isolation structure provided on the first substrate; The isolation structure is disposed so as to surround the first opening in a plan view. 9. The photoelectric conversion device according to any one of configurations 1 to 8. (Configuration 10) The separation structure is disposed so as to surround the second opening in a plan view. 10. The photoelectric conversion device according to configuration 9, (Configuration 11) The separation structure is disposed inside the second opening in a plan view. 10. The photoelectric conversion device according to configuration 9, (Configuration 12) The pinning layer includes an aluminum oxide film and / or a tantalum oxide film. 12. The photoelectric conversion device according to any one of configurations 1 to 11. (Configuration 13) The photoelectric conversion device according to any one of configurations 1 to 11, a signal processing device that processes a signal output from the photoelectric conversion device; A photoelectric conversion system comprising: (Configuration 14) A mobile object, The photoelectric conversion device according to any one of configurations 1 to 11, a distance information acquisition means for acquiring distance information to an object from a parallax image based on a signal from the photoelectric conversion device; a control means for controlling the moving object based on the distance information; A moving object characterized by having: (Configuration 15) The photoelectric conversion device according to any one of configurations 1 to 11, an optical device corresponding to the photoelectric conversion device; a control device that controls the photoelectric conversion device; a processing device that processes a signal output from the photoelectric conversion device; a mechanical device controlled based on the information obtained by the photoelectric conversion device; a display device that displays information obtained by the photoelectric conversion device; and a storage device that stores information obtained by the photoelectric conversion device; An apparatus characterized by comprising: [Explanation of symbols]

[0106] 100...Photoelectric conversion device 110...First substrate 112,152...Semiconductor substrate 118,120…separation structure 148, 172...wiring structure layer 150...Second board 160...Electrode pad 132, 146, 170, 234, 248... Wiring 176...Pinning layer 178,236,240…Opening 192...Pad opening 242...Through electrode

Claims

1. forming a photoelectric conversion portion on a first substrate; forming a first wiring on a first surface side of the first substrate; forming a pinning layer on a second surface of the first substrate, which serves as a light-receiving surface of the photoelectric conversion unit; forming a first opening in the pinning layer; forming an insulating layer over the pinning layer and in the first opening; forming a second opening portion that penetrates the insulating layer and the first substrate and reaches the first wiring in a region inside the first opening portion in a plan view; A method for manufacturing a photoelectric conversion device, comprising:

2. the first wiring is an electrode pad, The second opening is a pad opening that reaches the electrode pad.

2. The method for manufacturing a photoelectric conversion device according to claim 1.

3. forming a through electrode in the second opening, the through electrode being insulated from the first substrate and electrically connected to the first wiring; forming a second wiring electrically connected to the through electrode on the insulating layer; 2. The method for manufacturing a photoelectric conversion device according to claim 1, further comprising:

4. The method further includes forming a first wiring structure layer on the first surface side of the first substrate.

4. The method for manufacturing a photoelectric conversion device according to claim 1.

5. The step of forming the first wiring structure layer includes the step of forming the first wiring.

5. The method for manufacturing a photoelectric conversion device according to claim 4.

6. The method further includes a step of bonding a second substrate having a second wiring structure layer to the first surface side of the first substrate.

4. The method for manufacturing a photoelectric conversion device according to claim 1.

7. The step of forming the second wiring structure layer includes the step of forming the first wiring.

7. The method for manufacturing a photoelectric conversion device according to claim 6.

8. forming an isolation structure on the first substrate; The isolation structure is disposed so as to surround the first opening in a plan view.

4. The method for manufacturing a photoelectric conversion device according to claim 1.

9. The isolation structure is disposed so as to surround the second opening in a plan view.

9. The method for manufacturing a photoelectric conversion device according to claim 8.

10. The separation structure is disposed inside the second opening in a plan view.

9. The method for manufacturing a photoelectric conversion device according to claim 8.

11. a first substrate having a first surface and a second surface, the first substrate having a photoelectric conversion unit with the second surface as a light receiving surface; a first wiring provided on the first surface side of the first substrate; a pinning layer disposed on the second surface of the first substrate and having a first opening; an insulating layer disposed on the pinning layer and in the first opening; a second opening provided in an inner region of the first opening in a plan view, penetrating the insulating layer and the first substrate to reach the first wiring; A photoelectric conversion device comprising:

12. The pinning layer is not exposed to the second opening.

12. The photoelectric conversion device according to claim 11.

13. the first wiring is an electrode pad, The second opening is a pad opening that reaches the electrode pad.

12. The photoelectric conversion device according to claim 11.

14. a through electrode provided in the second opening, insulated from the first substrate, and electrically connected to the first wiring; a second wiring provided on the insulating layer and electrically connected to the through electrode; 12. The photoelectric conversion device according to claim 11, further comprising:

15. The first substrate further includes a first wiring structure layer provided on the first surface side.

15. The photoelectric conversion device according to claim 11, wherein the first and second electrodes are electrically connected to each other.

16. The first wiring structure layer includes the first wiring.

16. The photoelectric conversion device according to claim 15.

17. The semiconductor device further includes a second substrate having a second wiring structure layer attached to the first surface side of the first substrate.

15. The photoelectric conversion device according to claim 11, wherein the first and second electrodes are electrically connected to each other.

18. The second wiring structure layer includes the first wiring.

18. The photoelectric conversion device according to claim 17.

19. further comprising an isolation structure provided on the first substrate; The isolation structure is disposed so as to surround the first opening in a plan view.

15. The photoelectric conversion device according to claim 11, wherein the first and second electrodes are electrically connected to each other.

20. The isolation structure is disposed so as to surround the second opening in a plan view.

20. The photoelectric conversion device according to claim 19.

21. The separation structure is disposed inside the second opening in a plan view.

20. The photoelectric conversion device according to claim 19.

22. The pinning layer includes an aluminum oxide film and / or a tantalum oxide film.

15. The photoelectric conversion device according to claim 11, wherein the first and second electrodes are electrically connected to each other.

23. The photoelectric conversion device according to any one of claims 11 to 14, a signal processing device that processes a signal output from the photoelectric conversion device; A photoelectric conversion system comprising:

24. A mobile object, The photoelectric conversion device according to any one of claims 11 to 14, a distance information acquisition means for acquiring distance information to an object from a parallax image based on a signal from the photoelectric conversion device; a control means for controlling the moving object based on the distance information; A moving object characterized by having:

25. The photoelectric conversion device according to any one of claims 11 to 14, an optical device corresponding to the photoelectric conversion device; a control device that controls the photoelectric conversion device; a processing device that processes a signal output from the photoelectric conversion device; a mechanical device controlled based on the information obtained by the photoelectric conversion device; a display device that displays information obtained by the photoelectric conversion device; and a storage device that stores information obtained by the photoelectric conversion device; An apparatus characterized by comprising:

Images