Semiconductor manufacturing device and control method thereof

Abstract

To provide a device capable of suppressing cracks in a semiconductor chip during die bonding.SOLUTION: A semiconductor manufacturing device comprises a first chip bonder and a second chip bonder. The first chip bonder comprises a first holding unit (10), a first shaft (20), a first drive unit (70) which drives the first shaft, and a first pressure sensor (60) which detects a first pressure with which the first drive unit presses a semiconductor chip against a bonding target via the first shaft. The second chip bonder comprises a second holding unit, a second shaft, a second drive unit which drives the second shaft, and a second pressure sensor which detects a second pressure with which the second drive unit presses a semiconductor chip against a bonding target via the second shaft. A storage unit (90) stores a first set value for the first pressure and a second set value for the second pressure. A control unit (80) controls the first chip bonder such that the first pressure is set to the first set value, and controls the second chip bonder such that the second pressure is set to the second set value.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present embodiment relates to a semiconductor manufacturing apparatus and a control method thereof. [Background technology]

[0002] When semiconductor manufacturing equipment such as die bonding equipment bonds semiconductor chips onto a wiring substrate, it is common for multiple semiconductor chips to be stacked on the substrate. When bonding multiple semiconductor chips while shifting them in a stepped manner, the upper semiconductor chips stacked on top of each other overhang the semiconductor chips below them. In this case, a load is applied to the overhanging portions of the semiconductor chips, which can cause the semiconductor chips to crack. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2012-69627 [Patent Document 2] U.S. Patent Publication No. 2005 / 0139307 [Patent Document 3] U.S. Patent Publication No. 2017 / 0154865 [Patent Document 4] U.S. Patent Publication No. 2005 / 0196897 [Patent Document 5] U.S. Patent Publication No. 2020 / 0176414 [Patent Document 6] U.S. Patent Publication No. 2022 / 0336281 Summary of the Invention [Problem to be solved by the invention]

[0004] A semiconductor manufacturing apparatus and a control method thereof are provided that can suppress cracks in semiconductor chips during a die bonding process. [Means for solving the problem]

[0005] The semiconductor manufacturing apparatus according to this embodiment includes a first chip bonder and a second chip bonder. The first chip bonder includes a first holding unit capable of holding a first semiconductor chip, a first shaft supporting the first holding unit, a first drive unit driving the first shaft in a first direction from the first semiconductor chip toward the bonding target, and a first pressure sensor detecting a first pressure applied by the first drive unit to press the first semiconductor chip against the bonding target via the first shaft. The second chip bonder includes a second holding unit capable of holding the first semiconductor chip, a second shaft supporting the second holding unit, a second drive unit driving the second shaft in the first direction, and a second pressure sensor detecting a second pressure applied by the second drive unit to press the first semiconductor chip against the bonding target via the second shaft. The memory unit stores a first set value for the first pressure and a second set value for the second pressure. The control unit controls the first chip bonder to set the first pressure to a first set value, and controls the second chip bonder to set the second pressure to a second set value. [Brief explanation of the drawings]

[0006] [Figure 1] FIG. 1 is a diagram showing an example of the configuration of a die bonding apparatus according to a first embodiment. [Figure 2] FIG. 1 is a plan view showing an example of the configuration of a chip bonder according to a first embodiment. [Figure 3] 10 is a graph showing the relationship between the pressing force and bonding time of each chip bonder. [Figure 4] FIG. 3 is a flowchart showing an example of the operation of the die bonding apparatus according to the first embodiment. [Figure 5] FIG. 10 is a flowchart showing an example of abnormality determination by a control unit. [Figure 6] FIG. 10 is a diagram showing an example of the configuration of a die bonding apparatus according to a second embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0007] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. The present invention is not limited to the embodiment. The drawings are schematic or conceptual. In the specification and drawings, the same elements are designated by the same reference numerals.

[0008] (First embodiment) 1 is a diagram showing an example of the configuration of a die bonding apparatus according to a first embodiment. The die bonding apparatus 1 stacks, for example, semiconductor chips CH1 to CH3 on a substrate SUB while shifting them in the X direction. As a result, the semiconductor chips CH1 to CH3 are stacked in a staircase pattern on the substrate SUB. The semiconductor chips CH1 to CH3 and the substrate SUB are bonded together with adhesives B1 to B3.

[0009] The die bonding apparatus 1 includes chip bonders CBa_1 to CBa_3, CBb_1 to CBb_3, and CBc_1 to CBc_3, a control unit 80, a storage unit 90, a display 100, and a pump 110.

[0010] The chip bonders CBa_1 to CBa_3, CBb_1 to CBb_3, and CBc_1 to CBc_3 have the same configuration. Therefore, here, the configuration of the chip bonder CBa_1 will be described, and descriptions of the configurations of the chip bonders CBa_2, CBa_3, CBb_1 to CBb_3, and CBc_1 to CBc_3 will be omitted.

[0011] The chip bonder CBa_1 includes a bonding tool 10, a shaft 20, a head shaft 30, a pressure pipe 35, a cylinder side wall 40, a cylinder head 50, a pressure sensor 60, and a pump 70.

[0012] The bonding tool 10 serving as a holder is configured to be able to hold the semiconductor chips CH1 to CH3 by suction. For example, the bonding tool 10 includes a tool body 12 having a holding surface Fh that holds the semiconductor chips CH1 to CH3, and a flexible suction cover 11 that covers the holding surface Fh of the tool body 12. The tool body 12 is made of a rigid material such as metal or ceramic. The suction cover 11 is made of a flexible resin material such as rubber or silicone. The bonding tool 10 may also be made entirely of ceramic.

[0013] Holes (not shown) are provided in the suction cover 11 and the tool body 12 for suctioning the semiconductor chips CH1 to CH3. The pump 110 sucks air through the holes, and the semiconductor chips CH1 to CH3 are suctioned to the suction cover 11 by negative pressure. That is, the bonding tool 10 suctions the semiconductor chips CH1 to CH3 by means of a vacuum chuck. The bonding tool 10 may also suction the semiconductor chips CH1 to CH3 by means of an electromagnetic chuck.

[0014] The shaft 20 is connected between the head shaft 30 and the tool body 12 and supports the bonding tool 10. The shaft 20 is provided at the center of the tool body 12 in a plan view seen from the Z direction, and presses the bonding tool 10 approximately evenly in the −Z direction.

[0015] The head shaft 30 is connected to one end of the shaft 20 and slides on the inner surface of the cylinder side wall 40. Because the shaft 20 presses the bonding tool 10 almost evenly, the head shaft 30 can move within the cylinder side wall 40 in the Z direction while remaining almost parallel to the surface of the substrate SUB.

[0016] The pressurizing pipe 35 is connected between the head shaft 30 and the pump 70. The pump 70 sends gas into the pressurizing pipe 35, thereby pressing the head shaft 30 and the shaft 20 in the -Z direction with air pressure. This allows the bonding tool 10 to press the semiconductor chips CH1 to CH3 in the -Z direction, allowing them to be stacked on the substrate SUB.

[0017] The cylinder head 50 closes the internal space of the cylinder side wall 40. The shaft 20, the head shaft 30, the pressurizing pipe 35, the cylinder side wall 40 and the cylinder head 50 are made of a metal material such as tungsten.

[0018] The pressure sensor 60 is provided in the pressure pipe 35 and detects the pressure (hereinafter also referred to as pressing force) with which the bonding tool 10 presses the semiconductor chips CH1 to CH3 against the substrate SUB. The pressure sensor 60 may be, for example, a piezoelectric element type sensor using a piezoelectric element or a resistive film type sensor using a strain gauge.

[0019] The pump 70 serving as the driving unit is an air pump that drives the shaft 20 with gas pressure via the pressure pipe 35. Under the control of the control unit 80, the pump 70 drives the shaft 20 in the -Z direction from the semiconductor chips CH1 to CH3 toward the substrate SUB and the semiconductor chips CH1 and CH2 below them. At this time, the bonding tool 10 presses the semiconductor chips CH1 to CH3 against the substrate SUB or the semiconductor chips CH1 and CH2 with a predetermined pressure. This causes the semiconductor chips CH1 to CH3 to be stacked on and bonded to the substrate SUB.

[0020] The control unit 80 receives the pressure detected by the pressure sensor 60 and controls the pumps 70 and 110. The memory unit 90 pre-stores a set value of the pressing force of the bonding tool 10 (hereinafter also referred to as the pressure set value). The control unit 80 obtains the pressure set value from the memory unit 90 and controls the pump 70 so that the pressing force of the bonding tool 10 is equal to this pressure set value.

[0021] The storage unit 90 may have a threshold value that is slightly lower than the pressure setting value. In this case, the control unit 80 can automatically determine that an abnormality has occurred if the pressure falls below the threshold value while pressing the semiconductor chips CH1 to CH3.

[0022] The display 100 displays the pressure setting value and the time-dependent change in the pressing force detected by the pressure sensor 60. This allows the operator to determine that an abnormality has occurred if the pressing force temporarily drops.

[0023] In this way, the control unit 80 may automatically determine whether an abnormality has occurred, or the operator may determine whether an abnormality has occurred by referring to the change in pressure over time on the display 100.

[0024] An abnormality occurs when, for example, one of the semiconductor chips CH1 to CH3 is damaged while the semiconductor chips CH1 to CH3 are being pressed. More specifically, the semiconductor chip CH2 is stacked with a displacement in the X direction relative to the semiconductor chip CH1. The semiconductor chip CH3 is stacked with a displacement in the X direction relative to the semiconductor chips CH1 and CH2. In this case, a space is created between the semiconductor chips CH2 and CH3 and the substrate SUB. Therefore, when the chip bonders CBa_1 to CBc_3 press the semiconductor chips CH2 and CH3 with excessive pressure in the -Z direction, the overhang portions OH of the semiconductor chips CH2 and CH3 are bent in the -Z direction, which may cause the semiconductor chips CH2 and CH3 to crack. The control unit 80 or an operator determines the occurrence of such an abnormality.

[0025] Fig. 2 is a plan view showing an example of the configuration of the chip bonder according to the first embodiment, as viewed from the Z direction, of the chip bonders CBa_1 to CBa_3, CBb_1 to CBb_3, and CBc_1 to CBc_3 (hereinafter collectively referred to as CBa_1 to CBc_3) in Fig. 1.

[0026] The die bonding apparatus 1 according to this embodiment is equipped with nine chip bonders CBa_1 to CBc_3. The chip bonders CBa_1 to CBc_3 suck up the chip surface Fch of one semiconductor chip (any of CH1 to CH3) at a time and bond it onto the substrate SUB or another semiconductor chip CH1, CH2. The chip surface Fch is the surface of the semiconductor chip CH1 to CH3 held by the holding surface Fh of the bonding tool 10.

[0027] As described above, the chip bonders CBa_1 to CBc_3 have the same configuration.

[0028] The chip bonders CBa_1 to CBc_3 are arranged approximately evenly with respect to the chip surfaces Fch of the semiconductor chips CH1 to CH3. Therefore, the chip bonders CBa_1 to CBc_3 can press the substrate SUB or the other semiconductor chips CH1, CH2 approximately evenly with approximately the same pressing force. Furthermore, the multiple shafts 20 are connected to the centers of the chip bonders CBa_1 to CBc_3, respectively, and press the centers of the chip bonders CBa_1 to CBc_3 approximately evenly in the -Z direction.

[0029] On the other hand, the chip bonders CBa_1 to CBc_3 according to this embodiment are divided into a plurality of units (for example, nine units), each of which can independently press the semiconductor chips CH1 to CH3 with a different pressing force. In this case, pressure set values ​​and threshold values ​​are set for each of the chip bonders CBa_1 to CBc_3 and stored in the storage unit 90. The control unit 80 controls the chip bonders CBa_1 to CBc_3 so that the pressing forces of the bonding tools 10 of each of the chip bonders CBa_1 to CBc_3 are set to the corresponding pressure set values.

[0030] For example, at the overhang portions OH of the semiconductor chips CH2 and CH3 in FIG. 1, it is desirable that the chip bonders CBb_1 to CBb_3 press the semiconductor chips CH1 to CH3 with a lower pressing force than the chip bonders CBa_1 to CBa_3. It is desirable that the chip bonders CBc_1 to CBc_3 press the semiconductor chips CH1 to CH3 with a lower pressing force than the chip bonders CBb_1 to CBb_3. Therefore, for example, when bonding the semiconductor chip CH3 onto the semiconductor chip CH2, the pressure setting values ​​and thresholds of the chip bonders CBb_1 to CBb_3 are set lower than those of the chip bonders CBa_1 to CBa_3. The pressure setting values ​​and thresholds of the chip bonders CBc_1 to CBc_3 are set lower than those of the chip bonders CBb_1 to CBb_3. This makes it possible to suppress cracks in the semiconductor chips CH2 and CH3.

[0031] If the chip bonders CBa_1 to CBc_3 are configured as a single chip bonder, that single chip bonder will press the entire chip surface Fch of the semiconductor chip with a uniform pressing force. In this case, the semiconductor chip is more likely to crack in the overhanging portion of the semiconductor chip. Alternatively, if the pressing force is kept low to prevent the semiconductor chip from cracking, the chip bonder will not be able to sufficiently bond the semiconductor chip.

[0032] In contrast, in this embodiment, the chip bonder is divided into multiple (for example, nine) chip bonders CBa_1 to CBc_3, and the multiple chip bonders CBa_1 to CBc_3 bond the semiconductor chips CH1 to CH3 one by one onto the substrate SUB or onto other semiconductor chips CH1, CH2. At this time, as described above, the chip bonders CBa_1 to CBc_3 independently press the semiconductor chips CH1 to CH3 with pressure setting values ​​corresponding to each. This allows the chip bonders CBa_1 to CBc_3 to press the semiconductor chips CH1 to CH3 with different pressing forces. In other words, the chip bonders CBa_1 to CBc_3 can press the chip surfaces Fch of the semiconductor chips CH1 to CH3 with partially different pressing forces.

[0033] For example, when bonding the semiconductor chip CH1 to the substrate SUB, the chip bonders CBa_1 to CBc_3 press the semiconductor chip CH1 onto the substrate SUB approximately evenly with approximately equal pressing forces. When bonding the semiconductor chip CH2 to the semiconductor chip CH1, the chip bonders CBa_1 to CBa_3 and CBb_1 to CBb_3 press the semiconductor chip CH2 onto the semiconductor chip CH1 with approximately equal pressing forces, and the chip bonders CBc_1 to CBc_3 press the semiconductor chip CH2 with a pressing force that is lower than the pressing forces of the chip bonders CBa_1 to CBa_3 and CBb_1 to CBb_3. When bonding the semiconductor chip CH3 to the semiconductor chip CH2, the chip bonders CBa_1 to CBa_3 press the semiconductor chip CH3 to the semiconductor chip CH2 with approximately equal pressing forces, and the chip bonders CBb_1 to CBb_3 and CBc_1 to CBc_3 press the semiconductor chip CH3 with pressing forces that are lower than the pressing forces of the chip bonders CBa_1 to CBa_3. This allows the chip bonders CBa_1 to CBc_3 to sufficiently bond the semiconductor chips CH1 to CH3 while suppressing cracks in the semiconductor chips CH1 to CH3.

[0034] In the above embodiment, nine chip bonders are provided. However, the number of chip bonders is not limited. For example, if n chip bonders (n is a positive integer) are provided, the nth chip bonder (not shown) has a configuration similar to that of chip bonder CBa_1, and includes the bonding tool 10, shaft 20, head shaft 30, pressure pipe 35, cylinder side wall 40, cylinder head 50, pressure sensor 60, and pump 70 shown in FIG. 1.

[0035] The first to n-th chip bonders suck the chip surface Fch of one semiconductor chip CH1 to CH3 at a time and bond it onto the substrate SUB or another semiconductor chip CH1, CH2. The first to n-th chip bonders are arranged approximately evenly relative to the chip surfaces Fch of the semiconductor chips CH1 to CH3. The first to n-th chip bonders can independently press the semiconductor chips CH1 to CH3 with different pressing forces. Pressure setting values ​​and thresholds are set for each of the first to n-th chip bonders and stored in the memory unit 90. As a result, the first to n-th chip bonders independently press the semiconductor chips CH1 to CH3 with pressing forces based on their respective pressure setting values. Therefore, the first to n-th chip bonders can sufficiently bond the semiconductor chips CH1 to CH3 while suppressing cracks in the semiconductor chips CH1 to CH3. In this way, the effects of this embodiment can be obtained even when the chip bonders are divided into n units.

[0036] Fig. 3 is a graph showing the relationship between the pressing force of each chip bonder and the bonding time. The operator can refer to this graph on the display 100. Fig. 4 is a flow diagram showing an example of the operation of the die bonding apparatus according to the first embodiment. Abnormality detection by the die bonding apparatus 1 and its operation will be described with reference to Figs. 3 and 4.

[0037] As shown in FIG. 3, when pressing the semiconductor chips CH1 to CH3, the pressure setting values ​​of the chip bonders CBa_1 to CBa_3 are set to a relatively high Pa. For example, when pressing the semiconductor chip CH3, the pressure setting values ​​of the chip bonders CBb_1 to CBb_3 are set to Pb, which is lower than Pa. The pressure setting values ​​of the chip bonders CBc_1 to CBc_3 are set to Pc, which is lower than Pa and Pb. The pressure setting value Pc is approximately 0. The pressure setting values ​​Pa, Pb, and Pc are set based on the pressing force measured in advance using a test semiconductor chip (not shown) having the same structure as the semiconductor chips CH1 to CH3. The set pressure setting values ​​Pa, Pb, and Pc are stored in advance in the memory unit 90.

[0038] 4, in the bonding step, first, the chip bonders CBa_1 to CBb_3 suck the semiconductor chip CH3 and bring the semiconductor chip CH3 into contact with the semiconductor chips CH1 and CH2 stacked on the substrate SUB (S10). Note that in step S10, the chip bonders CBa_1 to CBc_3 may suck the semiconductor chip CH3 and bring it into contact with the semiconductor chips CH1 and CH2.

[0039] Next, the control unit 80 controls the chip bonders CBa_1 to CBa_3 so that the pressing forces of the chip bonders CBa_1 to CBa_3 approach the pressure set value Pa (NO in S20 and S30). The control unit 80 controls the chip bonders CBb_1 to CBb_3 so that the pressing forces of the chip bonders CBb_1 to CBb_3 approach the pressure set value Pb. The control unit 80 controls the chip bonders CBc_1 to CBc_3 so that the pressing forces of the chip bonders CBc_1 to CBc_3 approach the pressure set value Pc. When the pressure set value Pc is 0, the chip bonders CBc_1 to CBc_3 do not press the semiconductor chip CH3.

[0040] When the pressing force of the chip bonders CBa_1 to CBa_3 reaches the pressure set value Pa (YES in S30), the control unit 80 performs feedback control to maintain the pressing force of the chip bonders CBa_1 to CBa_3 at the pressure set value Pa (S40). When the pressing force of the chip bonders CBa_1 to CBa_3 reaches the pressure set value Pb, the control unit 80 performs feedback control to maintain the pressing force of the chip bonders CBb_1 to CBb_3 at the pressure set value Pb. When the pressing force of the chip bonders CBc_1 to CBc_3 reaches the pressure set value Pc, the control unit 80 performs feedback control to maintain the pressing force of the chip bonders CBc_1 to CBc_3 at the pressure set value Pc. If the pressure set value Pc is 0, the chip bonders CBc_1 to CBc_3 maintain the pressing force at 0.

[0041] Here, it is assumed that the pressing force of the chip bonders CBb_1 to CBb_3 causes cracks in the overhang portions OH of the semiconductor chips CH2 and CH3. In this case, it is considered that the pressing force of the chip bonders CBb_1 to CBb_3 transiently decreases. For example, the crack pressure C1 in FIG. 3 is a transient pressure decrease that occurs when the pressing force of the chip bonders CBb_1 to CBb_3 is increased. The crack pressure C2 is a transient pressure change, i.e., a pressure decrease, that occurs after the pressing force of the chip bonders CBb_1 to CBb_3 reaches the pressure setting value Pb. The pressure sensor 60 detects the pressing force of the chip bonders CBa_1 to CBc_3, and the display 100 can display the change in pressing force over time as shown in FIG. 3 (S50). The display 100 separately displays the change in pressing force over time for each of the chip bonders CBa_1 to CBc_3.

[0042] The operator refers to the change in pressure over time on the display 100, and if crack pressure C1 or C2 is occurring, determines that cracks have occurred in the semiconductor chips CH2 and CH3 (S60).

[0043] According to this embodiment, the chip bonder is divided into multiple (e.g., nine) chip bonders. Therefore, when a crack occurs in the semiconductor chips CH2 and CH3, the crack can be easily determined by detecting a change in the pressing force of some of the chip bonders CBb_1 to CBb_3 among the multiple chip bonders CBa_1 to CBc_3. For example, when a crack occurs in the semiconductor chips CH2 and CH3, the pressing force of the chip bonders CBb_1 to CBb_3 appears as crack pressure C1 or C2 in FIG. 3. This allows the operator to refer to the change in pressing force over time on the display 100 and easily determine that an abnormality such as a crack has occurred in the semiconductor chips CH2 and CH3 when crack pressure C1 or C2 is generated.

[0044] According to this embodiment, the control unit 80 may automatically determine an abnormality by setting thresholds Ptha and Pthb. For example, as shown in FIG. 3, the threshold Ptha is set to a value lower than the pressure setting value Pa by a predetermined value. The threshold Pthb is set to a value lower than the pressure setting value Pb by a predetermined value. Furthermore, for the period in which the pressure increases from the start of bonding until the pressure setting values ​​Pa and Pb are reached, the thresholds Ptha and Pthb may be set to values ​​lower than the pressure measured in advance using a test semiconductor chip by a predetermined value. The thresholds Ptha and Pthb are pre-stored in the storage unit 90. Note that, since the pressure setting value Pc is 0, thresholds for the chip bonders CBc_1 to CBc_3 are not set here.

[0045] 5 is a flow chart showing an example of abnormality determination by the control unit. The basic bonding operation may be the same as the operation shown in FIG.

[0046] The control unit 80 determines that an abnormality has occurred (S60) when the pressing force of the chip bonders CBa_1 to CBa_3 falls below a threshold value Ptha (YES in S70) while pressing the semiconductor chips CH1 to CH3 (S20 or S40). Alternatively, the control unit 80 determines that an abnormality has occurred when the pressing force of the chip bonders CBb_1 to CBb_3 falls below a threshold value Pthb while pressing the semiconductor chips CH1 to CH3.

[0047] 3, if a crack pressure C1 occurs due to a transient decrease in pressing force while the chip bonders CBb_1 to CBb_3 are applying pressure (S20), the control unit 80 determines that an abnormality has occurred (S60) because the crack pressure C1 is below the threshold value Pthb. Even if a crack pressure C2 occurs while the chip bonders CBb_1 to CBb_3 are feedback-controlling the pressing force (S40), the control unit 80 determines that an abnormality has occurred (S60) because the crack pressure C2 is below the threshold value Pthb. In this way, the control unit 80 can automatically determine an abnormality based on changes in the pressing force over time.

[0048] If it is determined that an abnormality has occurred, the control unit 80 causes the display 100 to display an alarm informing the user of the occurrence of the abnormality.

[0049] Incidentally, step S70 may be executed in step S50 of FIG.

[0050] As described above, according to this embodiment, the operator may determine whether an abnormality has occurred by referring to the display 100, but the control unit 80 may also automatically determine whether an abnormality has occurred based on the threshold values ​​Ptha and Pthb.

[0051] (Second embodiment) 6 is a diagram showing an example of the configuration of a die bonding apparatus according to the second embodiment. Here, the configuration of the chip bonder CBa_1 will be described, and descriptions of the configurations of the chip bonders CBa_2, CBa_3, CBb_1 to CBb_3, and CBc_1 to CBc_3 will be omitted.

[0052] In the chip bonder CBa_1 according to the second embodiment, the shaft 20 includes a shaft portion 21 connected to the bonding tool 10 and a shaft portion 22 provided on the pump 70 side. The head shaft 30 includes a head portion 31 provided on the shaft portion 21 side and a head portion 32 provided on the shaft portion 22 side. Furthermore, the chip bonder CBa_1 further includes a pressure sensor 120 provided between the head portion 31 and the head portion 32, i.e., between the shaft portion 21 and the shaft portion 22.

[0053] The shaft portion 21 is connected between the bonding tool 10 and the head portion 31. The shaft portion 22 is connected between the head portion 32 and the pressurizing tube 35. The shaft portions 21 and 22 are provided at the center of the tool body 12 in a plan view seen from the Z direction, and are both arranged so as to press the bonding tool 10 approximately evenly in the -Z direction. The pressurizing tube 35 applies pressure to the shaft portion 22, thereby pressing the semiconductor chips CH1 to CH3 via the head portions 31 and 32 and the shaft portion 21.

[0054] The head portion 31 is connected to the upper end of the shaft portion 21. The head portion 32 is connected to the lower end of the shaft portion 22. The head portions 31 and 32 face each other. The pressure sensor 120 is provided between the head portions 31 and 32, i.e., between the shaft portions 21 and 22, at a position intersecting the central axes of the shaft portions 21 and 22.

[0055] The pressure sensor 120 is provided between the head portion 31 and the head portion 32, and detects the pressure between the head portion 31 and the head portion 32. This allows the pressure sensor 120 to detect the pressing force with which the pump 70 presses the semiconductor chips CH1 to CH3 via the shaft 20 and the head shaft 30. The pressure sensor 120 may be, for example, a piezoelectric element type sensor using a piezoelectric element, or a resistive film type sensor using a strain gauge.

[0056] Other configurations of the chip bonder CBa_1 according to the second embodiment may be the same as those of the chip bonder CBa_1 according to the first embodiment.

[0057] Furthermore, the other configurations of the die bonding apparatus 1 according to the second embodiment may be the same as those of the first embodiment.

[0058] In the second embodiment, the control unit 80 receives pressure detected not only by the pressure sensor 60 but also by the pressure sensor 120. The control unit 80 may cause the display 100 to display the pressure from the pressure sensor 120 instead of or in addition to the pressure from the pressure sensor 60. Furthermore, the control unit 80 may automatically determine the occurrence of an abnormality using the pressure from the pressure sensor 120 instead of or in addition to the pressure from the pressure sensor 60.

[0059] When using both the pressure forces detected by the pressure sensors 60 and 120, the control unit 80 may use the average value of the pressure forces from the pressure sensors 60 and 120. This improves the reliability of abnormality determination.

[0060] When the pressure sensor 120 is used instead of the pressure sensor 60, the pressure sensor 60 may be omitted.

[0061] The operation of the die bonding apparatus 1 according to the second embodiment differs from that of the first embodiment in that the pressing force from the pressure sensor 120 is used to determine whether an abnormality has occurred. However, other operations of the second embodiment may be the same as those of the first embodiment. Therefore, the second embodiment can achieve the same effects as those of the first embodiment.

[0062] Although several embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These embodiments can be implemented in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included within the scope and spirit of the invention, as well as within the scope of the invention described in the claims and their equivalents. [Explanation of symbols]

[0063] 1 Die bonding equipment 10 Bonding Tools 20 shaft 30 Head shaft 35 Pressure pipe 40 Cylinder side wall 50 cylinder head 60 Pressure Sensor 70 Pump 80 Control Unit 90 Memory section 100 displays 110 Pump CBa_1~CBc_3 Chip Bonder

Claims

1. a first chip bonder comprising: a first holding unit capable of holding a first semiconductor chip; a first shaft supporting the first holding unit; a first driving unit driving the first shaft in a first direction from the first semiconductor chip toward a bonding target; and a first pressure sensor detecting a first pressure applied by the first driving unit to press the first semiconductor chip against the bonding target via the first shaft; a second chip bonder including a second holding portion capable of holding the first semiconductor chip, a second shaft supporting the second holding portion, a second driving portion driving the second shaft in the first direction, and a second pressure sensor detecting a second pressure applied by the second driving portion to press the first semiconductor chip against the bonding target via the second shaft; a storage unit that stores a first set value of the first pressure and a second set value of the second pressure; and A semiconductor manufacturing apparatus comprising: a control unit that controls the first chip bonder to set the first pressure to the first set value, and controls the second chip bonder to set the second pressure to the second set value.

2. 2. The semiconductor manufacturing apparatus according to claim 1, wherein the first and second driving units are pumps that drive the first and second shafts by gas pressure, respectively.

3. the first shaft includes a first portion connected to the first holding portion and a second portion provided on a side of the first driving portion, the second shaft includes a third portion connected to the second holding portion and a fourth portion provided on a side of the second driving portion, the first pressure sensor is provided between the first portion and the second portion; 3. The semiconductor manufacturing apparatus according to claim 1, wherein the second pressure sensor is provided between the third portion and the fourth portion.

4. the first shaft includes a first portion connected to the first holding portion and a second portion provided on a side of the first driving portion, the second shaft includes a third portion connected to the second holding portion and a fourth portion provided on a side of the second driving portion, the first chip bonder further includes a third pressure sensor provided between the first portion and the second portion and configured to detect a third pressure between the first portion and the second portion; 3. The semiconductor manufacturing apparatus according to claim 1, wherein the second chip bonder further comprises a fourth pressure sensor provided between the third portion and the fourth portion and configured to detect a fourth pressure between the third portion and the fourth portion.

5. a first chip bonder including a first holding portion capable of holding a first semiconductor chip, a first shaft supporting the first holding portion, and a first pressure sensor detecting a first pressure that presses the first semiconductor chip against a bonding target; a second chip bonder including a second holding portion capable of holding the first semiconductor chip, a second shaft supporting the second holding portion, and a second pressure sensor detecting a second pressure that presses the first semiconductor chip against the bonding target; and A method for controlling a semiconductor manufacturing apparatus including a control unit that controls the first and second pressures, A method for controlling a semiconductor manufacturing apparatus, comprising: controlling the first chip bonder to set the first pressure to the first set value based on a first set value of the first pressure; and controlling the second chip bonder to set the second pressure to the second set value based on a second set value of the second pressure.

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