Method for manufacturing joined body

Abstract

To provide a method for manufacturing a joined body, capable of easily and reliably joining a first member and a second member.SOLUTION: A method for manufacturing a joined body 1 includes: a first step in which a glass layer 6 is disposed between a first member 4 and a second member 5; and a second step in which, after the first step, the first member 4 and the second member 5 are joined by melting the glass layer 6 by irradiation with laser light L. In the second step, the second member 5 is supported by a support part 7, and the irradiation with the laser light L is performed in a state in which a low heat conduction layer 9 having a thermal conductivity lower than the thermal conductivity of the second member 5 is in contact with the second member 5 from the side opposite to the glass layer 6 with respect to the second member 5 in the thickness direction of the glass layer 6.SELECTED DRAWING: Figure 4

Description

[Technical Field]

[0001] The present invention relates to a method for producing a bonded body. [Background technology]

[0002] A method for manufacturing a bonded body is known in which a glass layer disposed between a first member and a second member is irradiated with laser light to melt the glass layer, thereby bonding the first member and the second member (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2017-212251 Summary of the Invention [Problem to be solved by the invention]

[0004] However, in the manufacturing method of the bonded body as described above, for example, when a second member is placed on a metal mounting table and a first member is placed on the second member via a glass layer, and laser light is irradiated in this state, the bond between the first member and the second member may become unstable.

[0005] Therefore, an object of the present invention is to provide a method for manufacturing a bonded body that can easily and reliably bond a first member and a second member. [Means for solving the problem]

[0006] The method for manufacturing a joined body of the present invention is [1] "a method for manufacturing a joined body comprising: a first step of arranging a glass layer between a first member and a second member; and a second step of, after the first step, joining the first member and the second member by melting the glass layer by irradiating laser light, wherein in the second step, the second member is supported by a support portion, and the irradiation of the laser light is carried out in a state where a low thermal conductivity region having a thermal conductivity lower than that of the second member is in contact with the second member from the opposite side of the glass layer in the thickness direction of the glass layer."

[0007] In the method for manufacturing a bonded body described in [1] above, the second member is supported by a support, and laser light is irradiated in a state in which a low-thermal-conductivity region having a thermal conductivity lower than that of the second member is in contact with the second member from the opposite side of the glass layer in the thickness direction of the glass layer. This makes it more difficult for heat to diffuse from the laser-irradiated region and its vicinity in the second member than when such a low-thermal-conductivity region is not in contact with the second member, and therefore the glass layer can be melted in a state in which the second member is sufficiently heated in the laser-irradiated region and its vicinity. Therefore, the method for manufacturing a bonded body described in [1] above can easily and reliably bond the first member and the second member.

[0008] The method for manufacturing a joined body of the present invention may be [2] "the method for manufacturing a joined body according to the above [1], wherein the second member is made of ceramics." According to the method for manufacturing a joined body according to [2], even when the second member is made of ceramics, the glass layer can be melted in the laser light irradiated region and its vicinity while the second member is sufficiently heated.

[0009] The method for manufacturing a bonded body of the present invention may be [3] "the method for manufacturing a bonded body according to the above [1] or [2], wherein the second member has a bottom wall and a side wall that faces the bottom wall and defines an opening, and in the first step, the glass layer is disposed between the first member and the side wall with the first member covering the opening." According to the method for manufacturing a bonded body according to [3], even when the second member has a bottom wall and a side wall, the glass layer can be melted in the laser light irradiated region and its vicinity while the second member is sufficiently heated.

[0010] The method for manufacturing a bonded body of the present invention may be [4] "a method for manufacturing a bonded body according to any one of [1] to [3] above, wherein the supporting member is disposed on the opposite side of the second member from the glass layer in the thickness direction of the glass layer, and the low thermal conductivity region is made of silicone and is disposed between the supporting member and the second member." According to the method for manufacturing a bonded body according to [4], the low thermal conductivity region made of silicone is disposed between the supporting member and the second member, thereby suppressing heat loss from the second member to the supporting member regardless of the material of the supporting member. This allows the second member to be sufficiently heated in the laser light irradiation region and its vicinity to melt the glass layer. Furthermore, when the first member is pressed against the second member, the low thermal conductivity region made of silicone deforms, thereby enabling the first member, the second member, and the glass layer to be in uniform contact with each other regardless of location.

[0011] The manufacturing method of the bonded body of the present invention may be [5] "the manufacturing method of the bonded body according to any one of the above [1] to [4], wherein in the second step, the irradiation of the laser light is carried out in a state in which the first member is pressed toward the second member by a pressing part." According to the manufacturing method of the bonded body according to [5], it is possible to improve the stability of the bond between the first member and the second member.

[0012] The method for manufacturing a bonded body of the present invention may be [6] "the method for manufacturing a bonded body according to the above [5], wherein the pressing portion is transparent to the laser light." According to the method for manufacturing a bonded body according to [6], the laser light can be irradiated through the pressing portion.

[0013] The method for manufacturing a bonded body of the present invention may be [7] "the method for manufacturing a bonded body according to any one of the above [1] to [6], wherein in the second step, a package accommodating a semiconductor element placed on the second member is formed by the first member and the second member bonded to each other via the glass layer, the support portion includes a mounting table on which the second member is placed, the mounting table has a contact surface that comes into contact with the second member, and the thermal conductivity of the mounting table is higher than the thermal conductivity of the second member." According to the method for manufacturing a bonded body according to [7], heat can be dissipated from a portion of the second member near the semiconductor element to the mounting table, and therefore a package accommodating a semiconductor element can be easily and reliably formed while suppressing thermal effects on the semiconductor element.

[0014] The method for manufacturing a bonded body of the present invention may be [8] "the method for manufacturing a bonded body according to the above [7], wherein the contact surface includes at least a part of the semiconductor element when viewed from the thickness direction of the glass layer." According to the method for manufacturing a bonded body according to [8], it is possible to reliably suppress thermal influence on the semiconductor element.

[0015] The method for manufacturing a bonded body of the present invention may be [9] "the method for manufacturing a bonded body according to the above [8], wherein the contact surface includes the entire semiconductor element when viewed from the thickness direction of the glass layer." According to the method for manufacturing a bonded body according to [9], it is possible to more reliably suppress thermal effects on the semiconductor element.

[0016] The method for manufacturing a bonded body of the present invention may be

[10] "the method for manufacturing a bonded body according to any one of the above [7] to [9], in which, when viewed from the thickness direction of the glass layer, the shortest distance between the contact surface and the glass layer is greater than the width of the glass layer." According to the method for manufacturing a bonded body according to

[10] , it is possible to prevent heat from escaping from the laser light irradiated region and its vicinity to the mounting table via the second member, and therefore it is possible to melt the glass layer in the laser light irradiated region and its vicinity with the second member sufficiently heated.

[0017] The method for manufacturing a bonded body of the present invention may be

[11] "the method for manufacturing a bonded body according to any one of the above [7] to

[10] , wherein the mounting table is provided with a cooling part." According to the method for manufacturing a bonded body according to

[11] , heat can be reliably dissipated from the portion of the second member near the semiconductor element to the mounting table, thereby reliably suppressing thermal effects on the semiconductor element. [Effects of the Invention]

[0018] According to the present invention, it is possible to provide a method for manufacturing a bonded body that can easily and reliably bond a first member and a second member. [Brief explanation of the drawings]

[0019] [Figure 1] FIG. 2 is a longitudinal sectional view of the bonded body according to the embodiment. [Figure 2] FIG. 2 is a cross-sectional view of the bonded body taken along line II-II shown in FIG. [Figure 3] 2 is a vertical cross-sectional view illustrating a first example of a method for manufacturing the bonded body shown in FIG. 1. FIG. [Figure 4] 2 is a vertical cross-sectional view illustrating a first example of a method for manufacturing the bonded body shown in FIG. 1. FIG. [Figure 5] 1. FIG. 4 is a vertical cross-sectional view illustrating a second example of a method for manufacturing the bonded body shown in FIG. [Figure 6] 1. FIG. 4 is a cross-sectional view illustrating a second example of a method for manufacturing the bonded body shown in FIG. [Figure 7] 1. FIG. 4 is a vertical cross-sectional view illustrating a second example of a method for manufacturing the bonded body shown in FIG. [Figure 8] 10A to 10D are longitudinal cross-sectional views illustrating third and fourth examples of the method for manufacturing a bonded body according to other embodiments. DETAILED DESCRIPTION OF THE INVENTION

[0020] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In each drawing, the same or corresponding parts are designated by the same reference numerals, and redundant explanations will be omitted. [Construction of the zygote]

[0021] 1 and 2, the bonded body 1 includes a package 2 and a semiconductor element 3. The package 2 is composed of a first member 4, a second member 5, and a glass layer 6. The package 2 houses the semiconductor element 3, which is a light emitting element or a light receiving element.

[0022] The second member 5 is made of ceramics. The second member 5 has a cylindrical shape with a bottom and a height direction along the Z-axis. Specifically, the second member 5 has a bottom wall 51 and a side wall 52. The bottom wall 51 has a rectangular plate shape with a thickness direction along the Z-axis. The side wall 52 has a rectangular cylindrical shape with a height direction along the Z-axis. The side wall 52 includes a pair of side walls 53 and 54 facing each other in the X-axis direction and a pair of side walls 55 and 56 facing each other in the Y-axis direction. The side wall 52 defines an opening 5a facing the bottom wall 51 in the Z-axis direction. The semiconductor element 3 is disposed on a bottom surface 5b of the second member 5 (i.e., the surface of the bottom wall 51 on the opening 5a side).

[0023] The ceramic constituting the second member 5 is ceramic that is absorptive of the laser light L described below, or ceramic that contains an additive that is absorptive of the laser light L described below. An example of the ceramic that is absorptive of the laser light L is aluminum nitride. An example of the ceramic that contains an additive that is absorptive of the laser light L is aluminum oxide that contains, as an additive, a simple metal oxide such as iron oxide, copper oxide, or chromium oxide, or a mixture or composite of multiple metal oxides.

[0024] The first member 4 is made of glass. The first member 4 is shaped like a rectangular plate with its thickness direction in the Z-axis direction. The first member 4 is disposed on the side wall 52 and covers the opening 5a. The outer edge region of the surface 4a of the first member 4 faces the end face 52a of the side wall 52 in the Z-axis direction. If the semiconductor element 3 is a light-emitting element, light emitted from the semiconductor element 3 passes through the first member 4 and is emitted to the outside of the package 2. If the semiconductor element 3 is a light-receiving element, light that passes through the first member 4 and enters the package 2 is incident on the semiconductor element 3.

[0025] The glass layer 6 is disposed between the first member 4 and the side wall 52. Specifically, the glass layer 6 is disposed between the outer edge region of the surface 4a of the first member 4 and the end face 52a of the side wall 52. When viewed from the Z-axis direction, which is the thickness direction of the glass layer 6, the glass layer 6 extends in the shape of a rectangular frame. The glass layer 6 bonds the first member 4 and the side wall 52 together, and hermetically seals the region between the first member 4 and the side wall 52. The material of the glass layer 6 is, for example, low-melting-point glass (vanadium phosphate glass, lead borate glass, etc.).

[0026] In this embodiment, the heat capacity of the second member 5 is greater than the heat capacity of the first member 4, and the thermal conductivity of the second member 5 is greater than the thermal conductivity of the first member 4. The heat capacity of the first member 4 is the heat capacity of the "portion joined to the second member 5 via the glass layer 6 and integrally formed from the same material." Similarly, the heat capacity of the second member 5 is the heat capacity of the "portion joined to the first member 4 via the glass layer 6 and integrally formed from the same material." Furthermore, the thermal conductivity of the first member 4 is the thermal conductivity of the "portion joined to the second member 5 via the glass layer 6 and integrally formed from the same material." Similarly, the thermal conductivity of the second member 5 is the thermal conductivity of the "portion joined to the first member 4 via the glass layer 6 and integrally formed from the same material." [First example of a method for manufacturing a bonded body]

[0027] A first example of a method for manufacturing the bonded body 1 described above will be described. First, as shown in FIGS. 3A and 3B, a low thermal conductive layer (low thermal conductive region) 9 is disposed on a mounting table 71, which is a support 7. Furthermore, a second member 5 having a semiconductor element 3 disposed on its bottom surface 5b, a first member 4 having a glass layer 6 fixed on its front surface 4a, and a pressing portion 8 are disposed on the low thermal conductive layer 9 in this order. As a result, the glass layer 6 is disposed between the first member 4 and the second member 5 (first step). Specifically, with the first member 4 covering the opening 5a, the glass layer 6 is disposed between the first member 4 and the sidewall 52. The pressing portion 8 is a plate-shaped member made of glass and is transparent to the laser light L. The low thermal conductive layer 9 is a plate-shaped member made of silicone and has a thermal conductivity lower than that of the second member 5. The low thermal conductive layer 9 is in contact with the second member 5. The mounting table 71 is a plate-shaped member made of metal, and has a thermal conductivity higher than that of the second member 5 and a thermal capacity higher than that of the second member 5. The mounting table 71 is spaced apart from the second member 5.

[0028] In the first step, the second member 5 is placed on the mounting table 71 via the low thermal conductive layer 9, whereby the second member 5 is supported by the support part 7, and the low thermal conductive layer 9 comes into contact with the second member 5 from the side opposite the glass layer 6 with respect to the second member 5 in the Z-axis direction. In other words, the second member 5 is placed on the mounting table 71 via the low thermal conductive layer 9, whereby the support part 7 is placed on the side opposite the glass layer 6 with respect to the second member 5 in the Z-axis direction, and the low thermal conductive layer 9 is placed between the support part 7 and the second member 5. Here, "the second member 5 is supported by the support part 7" means that the second member 5 is supported by the support part 7 without the first member 4 being interposed between the support part 7 and the second member 5 (other members such as the low thermal conductive layer 9 may be interposed).

[0029] The fixing (pre-firing) of the glass layer 6 on the surface 4a of the first component 4 is, for example, performed as follows. First, a powdered glass frit (glass powder) made of low-melting-point glass, an organic solvent such as amyl acetate, and a binder resin such as acrylic are kneaded together to prepare a frit paste containing these. Next, a paste layer is formed on the surface 4a of the first component 4 by applying the frit paste. Next, the organic solvent is removed from the paste layer by drying, and further, the binder is gasified and the glass frit is melted by irradiation with laser light or heating in a furnace, thereby fixing the glass layer 6 on the surface 4a of the first component 4.

[0030] After the first step, as shown in FIG. 4 , the glass layer 6 is melted by irradiation with laser light L, thereby bonding the first member 4 and the second member 5 (second step). The laser light L is irradiated while the first member 4 is pressed against the second member 5 by the pressing unit 8, the second member 5 is supported by the support unit 7, and the low thermal conductive layer 9 is in contact with the second member 5 from the side opposite the glass layer 6 in the Z-axis direction. At this time, the laser light L is scanned on the glass layer 6 by a galvanometer mirror (not shown) so that the optical axis A of the laser light L moves relatively along the glass layer 6. The laser light L passes through the pressing unit 8 and the first member 4 and is incident on the second member 5 and the glass layer 6. The first member 4 and the second member 5 are bonded by a chemical reaction between the glass layer 6 and the second member 5 made of ceramic when the glass layer 6 melts and resolidifies. At this time, a portion of the first member 4 made of glass along the glass layer 6 may melt and resolidify. In the second step described above, the package 2 (see FIG. 1) that houses the semiconductor element 3 is formed by the first member 4 and the second member 5 that are joined together via the glass layer 6, and the joined body 1 is manufactured. [Actions and Effects of the First Example of the Joint Manufacturing Method]

[0031] In the first example of the manufacturing method for the joined body 1, the second member 5 is supported by the support 7, and the laser light L is irradiated in a state in which the low thermal conductive layer 9 is in contact with the second member 5 from the side opposite to the glass layer 6 with respect to the second member 5 in the Z-axis direction. This makes it difficult for heat to diffuse from the region irradiated with the laser light L and its vicinity in the second member 5, so that the glass layer 6 can be melted in a state in which the second member 5 is sufficiently heated in the region irradiated with the laser light L and its vicinity. Therefore, according to the first example of the manufacturing method for the joined body 1, the first member 4 and the second member 5 can be easily and reliably joined.

[0032] If the laser beam L is irradiated in a state in which the low thermal conductive layer 9 is not in contact with the second member 5 from the side opposite the glass layer 6 with respect to the second member 5 in the Z-axis direction, heat is likely to escape from the region irradiated with the laser beam L and its vicinity to the mounting table 71, making it difficult for the temperature of the second member 5 to increase in the region irradiated with the laser beam L and its vicinity. If the temperature of the second member 5 is unlikely to increase in the region irradiated with the laser beam L and its vicinity, the wettability of the glass layer 6 to the second member 5 made of ceramics is poor, making it difficult to reliably bond the first member 4 and the second member 5. In contrast, in the first example of the manufacturing method for the bonded body 1 described above, the second member 5 is supported by the support 7, and the laser beam L is irradiated in a state in which the low thermal conductive layer 9 is in contact with the second member 5 from the side opposite the glass layer 6 with respect to the second member 5 in the Z-axis direction. Therefore, heat is unlikely to escape from the region irradiated with the laser beam L and its vicinity to the mounting table 71, making it difficult for the temperature of the second member 5 to increase in the region irradiated with the laser beam L and its vicinity. Therefore, the second member 5 can be heated to a high temperature in the irradiation region R of the laser light L and its vicinity, promoting a chemical reaction at the interface between the second member 5 and the glass layer 6 and improving the joining speed and joining quality between the first member 4 and the second member 5 made of ceramic. In particular, because the glass layer 6 overlaps with the low thermal conductivity layer 9 when viewed from the Z-axis direction, it is possible to effectively prevent heat from escaping from the irradiation region R of the laser light L and its vicinity to the mounting table 71.

[0033] It is also conceivable to metallize each of the first member 4 and the second member 5 and then join the first member 4 and the second member 5 via AuSn solder. However, the metallization step increases the number of steps, and the solder contains Au, which increases costs. Another conceivable method is to place the first member 4 and the second member 5, with the glass layer 6 disposed between them, in a furnace and heat them in the furnace to melt the glass layer 6. However, because the melting point of the glass layer 6 is much higher than that of the AuSn solder (at least about 360°C), heating in the furnace may damage the semiconductor element 3. The first example of the manufacturing method for the joined body 1 described above solves these problems.

[0034] In the first example of the manufacturing method of the joined body 1, the second member 5 is made of ceramic. As a result, even when the second member 5 is made of ceramic, the glass layer 6 can be melted in a state where the second member 5 is sufficiently heated in the region irradiated with the laser light L and its vicinity. In other words, although the wettability of the glass layer 6 to the second member 5 made of ceramic is poor, the second member 5 can be heated to a high temperature in the region R irradiated with the laser light L and its vicinity, which promotes a chemical reaction at the interface between the second member 5 and the glass layer 6 and improves the joining speed and joining quality between the first member 4 and the second member 5 made of ceramic.

[0035] In the first example of the manufacturing method of the bonded body 1, the second member 5 has a bottom wall 51 and a side wall 52, and the first member 4 covers the opening 5a of the second member 5, and the glass layer 6 is disposed between the first member 4 and the side wall 52. This makes it possible to melt the glass layer 6 in the irradiation region of the laser light L and its vicinity while sufficiently heating the second member 5, even when the second member 5 has the bottom wall 51 and the side wall 52 (i.e., when the second member 5 has a complex shape).

[0036] In a first example of the method for manufacturing the bonded body 1, the supporting part 7 is disposed on the opposite side of the second member 5 from the glass layer 6 in the Z-axis direction, and a low thermal conductive layer 9 made of silicone is disposed between the supporting part 7 and the second member 5. This makes it possible to suppress heat loss from the second member 5 to the supporting part 7 regardless of the material of the supporting part 7, and to melt the glass layer 6 in a state where the second member 5 is sufficiently heated in the region irradiated with the laser light L and in the vicinity thereof. Furthermore, when the first member 4 is pressed against the second member 5, the low thermal conductive layer 9 made of silicone deforms, making it possible to make the contact state between the first member 4, the second member 5, and the glass layer 6 uniform regardless of location.

[0037] In the first example of the method for manufacturing the bonded body 1, the laser light L is irradiated in a state in which the first member 4 is pressed against the second member 5 by the pressing unit 8. This can improve the stability of the bond between the first member 4 and the second member 5.

[0038] In the first example of the method for manufacturing the bonded body 1, the pressing portion 8 is transparent to the laser light L. This allows the laser light L to be irradiated through the pressing portion 8.

[0039] In the first example of the method for manufacturing the bonded body 1, the package 2 that houses the semiconductor element 3 is formed by a first member 4 and a second member 5 that are bonded to each other via a glass layer 6. This makes it possible to easily and reliably form the package 2 that houses the semiconductor element 3 while suppressing thermal effects on the semiconductor element 3.

[0040] In particular, the package 2 that houses the semiconductor element 3 may require airtight sealing to ensure long-term reliability. Furthermore, if the semiconductor element 3 is a light-emitting element, the semiconductor element 3 itself generates heat, and therefore the package 2 that houses the semiconductor element 3 may require high heat dissipation properties. Under these circumstances, the first example of the manufacturing method for the bonded body 1, which can easily and reliably form the package 2 in which the second member 5 is made of ceramic, is extremely effective.

[0041] In a first example of the method for manufacturing the bonded body 1, the glass layer 6 is fixed to the first member 4, and then the glass layer 6 is disposed between the first member 4 and the second member 5 (first step). Then, the glass layer 6 is melted by irradiation with laser light L, thereby bonding the first member 4 and the second member 5 (second step). When the wettability of the glass layer 6 to the first member 4 is better than the wettability of the glass layer 6 to the second member 5 made of ceramic, such as when the first member 4 is made of glass, it is effective to fix the glass layer 6 to the first member 4. Furthermore, when the shape of the first member 4 is simpler than the shape of the second member 5, such as when the shape of the first member 4 is plate-like, it is effective to fix the glass layer 6 to the first member 4. [Second example of manufacturing method for bonded body]

[0042] A second example of a method for manufacturing the bonded body 1 described above will be described. First, as shown in FIG. 5A, a mounting table 71 having a main body portion 711 and a protrusion portion 712, a cooling portion 72, and a low thermal conductive layer 9 having an opening formed therein are prepared. The main body portion 711 is a plate-shaped portion whose thickness direction is in the Z-axis direction. The protrusion portion 712 is a platform-shaped portion whose height direction is in the Z-axis direction and is disposed on one side of the main body portion 711 in the Z-axis direction. The main body portion 711 and the protrusion portion 712 are integrally formed from metal and have a thermal conductivity higher than that of the second member 5 and a heat capacity higher than that of the second member 5. The cooling portion 72 is provided on the mounting table 71 and removes heat from the mounting table 71. Specifically, the cooling portion 72 is disposed on the other side of the mounting table 71 in the Z-axis direction. The cooling portion 72 is thermally connected to the main body portion 711. As an example, the cooling unit 72 is a cooling structure such as a cooling fin, or a cooling element such as a Peltier element. The low thermal conductive layer 9 is a plate-shaped member made of silicone, and has a thermal conductivity lower than that of the second member 5. The low thermal conductive layer 9 is disposed on the surface of the main body 711 (the surface on one side in the Z-axis direction) with the protrusions 712 disposed in the openings of the low thermal conductive layer 9. Contact surfaces 71a, which are the top surfaces of the protrusions 712, are exposed to the outside from the openings of the low thermal conductive layer 9. The thickness of the low thermal conductive layer 9 is greater than the height of the protrusions 712, and therefore the contact surfaces 71a are located within the openings of the low thermal conductive layer 9.

[0043] Next, as shown in FIGS. 5A and 5B, the second member 5 having the semiconductor element 3 disposed on its bottom surface 5b, the first member 4 having the glass layer 6 fixed on its surface 4a, and the pressing unit 8 are disposed in this order on the low thermal conductive layer 9. As a result, the glass layer 6 is disposed between the first member 4 and the second member 5 (first step). Specifically, with the first member 4 covering the opening 5a, the glass layer 6 is disposed between the first member 4 and the side wall 52. Next, as shown in FIG. 5B, the pressing unit 8 presses the first member 4 toward the second member 5, compressing the low thermal conductive layer 9, and the mounting base 71 together with the low thermal conductive layer 9 contacts the second member 5. Specifically, the surface of the low thermal conductive layer 9 opposite the main body 711 and the contact surface 71a of the mounting base 71 contact the surface of the bottom wall 51 of the second member 5 opposite the bottom surface 5b.

[0044] In the first step, the second member 5 is placed on the mounting table 71 via the low thermal conductive layer 9, whereby the second member 5 is supported by the support part 7, and the low thermal conductive layer 9 comes into contact with the second member 5 from the side opposite the glass layer 6 with respect to the second member 5 in the Z-axis direction. In other words, by placing the second member 5 on the mounting table 71 via the low thermal conductive layer 9, the support part 7 is placed on the side opposite the glass layer 6 with respect to the second member 5 in the Z-axis direction, and the low thermal conductive layer 9 is placed between the support part 7 and the second member 5.

[0045] 6, the contact surface 71a includes the entire semiconductor element 3 when viewed from the Z-axis direction. In other words, when viewed from the Z-axis direction, the outer edge of the semiconductor element 3 is located inside the outer edge of the contact surface 71a. When viewed from the Z-axis direction, the shortest distance D between the contact surface 71a and the glass layer 6 is greater than the width W of the glass layer 6. Note that the width W of the glass layer 6 may be the average width of the entire glass layer 6.

[0046] After the first step, as shown in FIG. 7 , the glass layer 6 is melted by irradiation with laser light L, thereby bonding the first member 4 and the second member 5 (second step). The laser light L is irradiated in a state in which the first member 4 is pressed against the second member 5 by the pressing unit 8, the second member 5 is supported by the support unit 7, the low thermal conductive layer 9 is in contact with the second member 5 from the side opposite the glass layer 6 relative to the second member 5 in the Z-axis direction, and the mounting table 71 is in contact with the second member 5 at the contact surface 71a. At this time, the laser light L is scanned on the glass layer 6 by a galvanometer mirror (not shown) so that the optical axis A of the laser light L moves relatively along the glass layer 6. The laser light L passes through the pressing unit 8 and the first member 4 and is incident on the second member 5 and the glass layer 6. Bonding of the first member 4 and the second member 5 is achieved by a chemical reaction between the glass layer 6 and the second member 5 made of ceramics when the glass layer 6 melts and resolidifies. At this time, the portion of the first member 4 made of glass along the glass layer 6 may melt and re-solidify. In the second step described above, the package 2 (see FIG. 1) that houses the semiconductor element 3 is formed by the first member 4 and the second member 5 that are joined together via the glass layer 6, and the joined body 1 is manufactured. [Actions and Effects of the Second Example of the Method for Manufacturing a Bonded Body]

[0047] According to the second example of the method for manufacturing the bonded body 1, the first member 4 and the second member 5 can be easily and reliably bonded together for the same reasons as in the first example of the method for manufacturing the bonded body 1. In addition, according to the second example of the method for manufacturing the bonded body 1, the same actions and effects as in the first example of the method for manufacturing the bonded body 1 can be achieved.

[0048] In the second example of the manufacturing method for the bonded body 1, the mounting base 71 of the support portion 7 has a contact surface 71a that comes into contact with the second member 5, and the thermal conductivity of the mounting base 71 is greater than that of the second member 5. This allows heat to dissipate from a portion of the second member 5 near the semiconductor element 3 to the mounting base 71, thereby making it possible to easily and reliably form the package 2 that houses the semiconductor element 3 while suppressing thermal effects on the semiconductor element 3. In particular, when viewed from the Z-axis direction, the glass layer 6 overlaps the low thermal conductive layer 9 but does not overlap the contact surface 71a. This makes it possible to prevent heat from escaping from the irradiated area of ​​the laser light L and its vicinity to the contact surface 71a in a linear manner.

[0049] In the second example of the method for manufacturing the bonded body 1, the contact surface 71a of the mounting table 71 includes the entire semiconductor element 3 when viewed from the Z-axis direction. This makes it possible to more reliably suppress the thermal influence on the semiconductor element 3.

[0050] In the second example of the method for manufacturing the bonded body 1, when viewed from the Z-axis direction, the shortest distance D between the contact surface 71a and the glass layer 6 is larger than the width W of the glass layer 6. This makes it possible to suppress heat from escaping from the region irradiated with the laser light L and its vicinity to the mounting table 71 via the second member 5, and therefore makes it possible to melt the glass layer 6 in the region irradiated with the laser light L and its vicinity while the second member 5 is sufficiently heated.

[0051] In the second example of the method for manufacturing the bonded body 1, a cooling unit 72 is provided on the mounting table 71. This allows heat to be reliably dissipated from the portion of the second member 5 near the semiconductor element 3 to the mounting table 71, thereby reliably suppressing the thermal influence on the semiconductor element 3. [Variations]

[0052] The present invention is not limited to the above-described embodiment. For example, the material of the first member 4 is not limited to glass. As an example, the material of the first member 4 may be ceramic or metal. The shape of the first member 4 is not limited to a rectangular plate with its thickness direction in the Z-axis direction. The material of the second member 5 is not limited to ceramic. As an example, the material of the second member 5 may be glass or metal. The shape of the second member 5 is not limited to a bottomed cylindrical shape with its height direction in the Z-axis direction. The heat capacity of the second member 5 may be smaller than that of the first member 4. The thermal conductivity of the second member 5 may be smaller than that of the first member 4. The shape of the glass layer 6 when viewed in the Z-axis direction, which is the thickness direction of the glass layer 6, is not limited to a rectangular frame shape. The glass layer 6 may be fixed to the second member 5 before being disposed between the first member 4 and the second member 5.

[0053] Other shapes of the first member 4 and the second member 5 will be described. As shown in FIGS. 8(a) and 8(b), the first member 4 is cap-shaped with its height direction aligned in the Z-axis direction. Specifically, the first member 4 has a top wall 41 and a side wall 42. The top wall 41 is shaped like a rectangular plate with its thickness direction aligned in the Z-axis direction. The side wall 42 is shaped like a rectangular cylinder with its height direction aligned in the Z-axis direction. The side wall 42 defines an opening facing the top wall 41 in the Z-axis direction. The second member 5 is shaped like a rectangular plate with its thickness direction aligned in the Z-axis direction. The second member 5 covers the opening of the first member 4 with the outer edge region of the surface 5c of the second member 5 facing the end face 42a of the side wall 42 in the Z-axis direction.

[0054] 8(a) and 8(b), the semiconductor element 3 is disposed on the surface 5c of the second member 5. The glass layer 6 is disposed between the side wall 42 and the second member 5. Specifically, the glass layer 6 is disposed between the end surface 42a of the side wall 42 and the outer edge region of the surface 5c of the second member 5. When viewed from the Z-axis direction, which is the thickness direction of the glass layer 6, the glass layer 6 extends in the shape of a rectangular frame.

[0055] A third example of a method for manufacturing the bonded body 1 in which the first member 4 has a cap-like shape and the second member 5 has a plate-like shape will be described. First, as shown in FIG. 8(a), a low thermal conductive layer 9 is placed on a mounting table 71, which is a support 7. Furthermore, a second member 5 having a semiconductor element 3 placed on a surface 5c, a first member 4 having a glass layer 6 fixed to an end surface 42a, and a pressing unit 8 are placed in this order on the low thermal conductive layer 9. Next, the first member 4 is pressed against the second member 5 by the pressing unit 8, the second member 5 is supported by the support 7, and the low thermal conductive layer 9 is in contact with the second member 5 from the side opposite the glass layer 6 in the Z-axis direction. Laser light L is then irradiated. In this case, too, the first member 4 and the second member 5 can be easily and reliably bonded together for the same reasons as in the first example of the method for manufacturing the bonded body 1.

[0056] A fourth example of a method for manufacturing the bonded body 1 in which the first member 4 has a cap-like shape and the second member 5 has a plate-like shape will be described. First, as shown in FIG. 8B, a mounting table 71 having a main body 711 and a protrusion 712, a cooling unit 72, and a low thermal conductive layer 9 having an opening formed therein are prepared. Next, a second member 5 having a semiconductor element 3 disposed on a surface 5c thereof, a first member 4 having a glass layer 6 fixed to an end surface 42a thereof, and a pressing unit 8 are placed in this order on the low thermal conductive layer 9. Next, the first member 4 is pressed against the second member 5 by the pressing unit 8, the second member 5 is supported by the support unit 7, the low thermal conductive layer 9 is in contact with the second member 5 from the side opposite the glass layer 6 in the Z-axis direction with respect to the second member 5, and the mounting table 71 is in contact with the second member 5 at the contact surface 71a. Laser light L is then irradiated. In this case as well, for the same reasons as in the first example of the method for manufacturing the bonded body 1, the first member 4 and the second member 5 can be bonded easily and reliably.

[0057] In the second and fourth examples of the manufacturing method of the bonded body 1 described above, the contact surface 71a of the mounting table 71 may include a part of the semiconductor element 3 when viewed from the Z-axis direction. Even in this case, it is possible to reliably suppress the thermal influence on the semiconductor element 3. Note that even if the contact surface 71a of the mounting table 71 does not include the semiconductor element 3 when viewed from the Z-axis direction, it is possible to suppress the thermal influence on the semiconductor element 3 compared to when the contact surface 71a is not in contact with the second member 5.

[0058] In any of the above-described embodiments and examples, the low thermal conductive layer 9 is not limited to a plate-shaped member made of silicone. The material of the low thermal conductive layer 9 may be any material as long as it has a thermal conductivity lower than that of the second member 5, and the shape of the low thermal conductive layer 9 is arbitrary. In other words, instead of or together with the low thermal conductive layer 9, a low thermal conductive region (including an air region) may be in contact with the second member 5 from the side opposite to the glass layer 6 with respect to the second member 5 in the Z-axis direction.

[0059] In any of the above-described embodiments and examples, the support portion 7 is not limited to the mounting table 71. The support portion 7 may be anything that supports the second member 5, and may be anything that holds the second member 5, for example.

[0060] In any of the above-described embodiments and examples, the optical axis A of the laser light L may be moved relatively along the glass layer 6 by moving at least one of the “configuration on the side emitting the laser light L” and the mounting table 71.

[0061] The package 2 is not limited to one that houses a semiconductor element 3 that is a light-emitting element or a light-receiving element. The package 2 may also house other electronic components (for example, a MEMS device, a quartz oscillator, a spatial light modulation device, etc.). The first member 4 and the second member 5 do not have to constitute a package for housing any component. The first member 4 and the second member 5 may each have a plate-like shape.

[0062] The glass layer 6 does not have to be formed in a continuous frame shape. Even when the first member 4 and the second member 5 form a package, the glass layer 6 does not have to be formed in a continuous frame shape, and the package does not have to be airtightly sealed. The frit paste used to fix the glass layer 6 may or may not contain a laser light absorbing material such as iron oxide. [Explanation of symbols]

[0063] 1...bonded body, 2...package, 3...semiconductor element, 4...first member, 5...second member, 5a...opening, 6...glass layer, 7...support portion, 8...pressing portion, 9...low thermal conductivity layer (low thermal conductivity region), 51...bottom wall, 52...side wall, 71...mounting table, 71a...contact surface, 72...cooling portion, D...shortest distance, L...laser light, W...width.

Claims

1. a first step of disposing a glass layer between a first member and a second member; a second step of joining the first member and the second member by melting the glass layer by irradiating it with laser light after the first step, In the second step, the second member is supported by a support portion, and the laser light is irradiated in a state where a low thermal conductivity region having a thermal conductivity lower than the thermal conductivity of the second member is in contact with the second member from the opposite side of the glass layer in the thickness direction of the glass layer.

2. The method for manufacturing a bonded body according to claim 1 , wherein the second member is made of ceramics.

3. The second member has a bottom wall and a side wall opposing the bottom wall and defining an opening; The method for manufacturing a bonded body according to claim 1 , wherein in the first step, the glass layer is disposed between the first member and the side wall in a state where the first member covers the opening.

4. the support portion is disposed on an opposite side of the second member from the glass layer in the thickness direction of the glass layer, The method for manufacturing a bonded body according to claim 1 , wherein the low thermal conductivity region is made of silicone and is disposed between the support portion and the second member.

5. The method for manufacturing a bonded body according to claim 1 , wherein in the second step, the laser light is irradiated in a state in which the first member is pressed against the second member by a pressing portion.

6. The method for manufacturing a bonded body according to claim 5 , wherein the pressing portion is transparent to the laser light.

7. In the second step, a package is formed by the first member and the second member joined to each other via the glass layer, the package accommodating a semiconductor element disposed on the second member; the support portion includes a mounting table on which the second member is placed, the mounting table has a contact surface that comes into contact with the second member, The method for manufacturing a bonded body according to claim 1 , wherein the thermal conductivity of the mounting table is greater than the thermal conductivity of the second member.

8. The method for manufacturing a bonded body according to claim 7 , wherein the contact surface includes at least a part of the semiconductor element when viewed in the thickness direction of the glass layer.

9. The method for manufacturing a bonded body according to claim 8 , wherein the contact surface includes the entire semiconductor element when viewed in the thickness direction of the glass layer.

10. The method for manufacturing a joined body according to claim 7 , wherein the shortest distance between the contact surface and the glass layer is greater than a width of the glass layer when viewed in the thickness direction of the glass layer.

11. The method for manufacturing a bonded body according to claim 7 , wherein the mounting table is provided with a cooling section.

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