Semiconductor device

Abstract

To provide a semiconductor device that can improve the adhesion between a lead and sealing resin.SOLUTION: A semiconductor device A10 includes a lead 10 having a main surface 101A facing a thickness direction, a semiconductor element mounted on the main surface 101A, and sealing resin provided in contact with the main surface 101A and covering the semiconductor element. In the lead 10, a plurality of grooves 20 depressed from the main surface 101A and separated from each other are formed. The grooves 20 are apart from the periphery of the main surface 101A. The grooves 20 include a plurality of first grooves 21 and a plurality of second grooves 22 arranged along a first direction x that is orthogonal to the thickness direction. Each of the first grooves 21 and each of the second grooves 22 are linear extending in the direction that is orthogonal to the thickness direction. In the first direction x, at least two of the first grooves 21 and at least two of the second grooves 22 are disposed alternately.SELECTED DRAWING: Figure 11

Description

[Technical Field]

[0001] The present disclosure relates to a semiconductor device including leads and a sealing resin. [Background technology]

[0002] Patent Document 1 discloses an example of a semiconductor device comprising a first lead including a first pad having a pad main surface, a semiconductor element mounted on the pad main surface, and a sealing resin in contact with the pad main surface and covering the semiconductor element. The semiconductor element is conductively bonded to the first pad via a bonding layer. The semiconductor device further comprises a second lead including a second pad, and a wire (first bonding wire) conductively bonded to the semiconductor element and the second pad. The second pad and the wire are covered with the sealing resin. As a result, in this semiconductor device, the semiconductor element and components involved in the conductive path of the semiconductor element are protected from external factors by the sealing resin.

[0003] When the semiconductor device disclosed in Patent Document 1 is used, heat is generated from the semiconductor element. This generates thermal strain in the first pad, generating shear stress at the interface between the pad's main surface and the encapsulating resin. If the shear stress becomes excessively concentrated, the encapsulating resin may peel off from the pad's main surface and cracks may occur in the bonding layer between the pad's main surface and the semiconductor element. Furthermore, due to the influence of heat conducted from the semiconductor element to the wire, shear stress also occurs at the bonding interface between the second pad and the wire. This may cause pitting corrosion in the wire. Therefore, it is necessary to prevent peeling of the encapsulating resin and defects in the bonding layer and wire by improving the adhesion between the first and second pads and the encapsulating resin. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Laid-Open No. 2017-174951 Summary of the Invention [Problem to be solved by the invention]

[0005] In view of the above circumstances, an object of the present disclosure is to provide a semiconductor device that can improve the adhesion between the leads and the sealing resin. [Means for solving the problem]

[0006] The semiconductor device provided by the present disclosure comprises a lead having a main surface facing in the thickness direction, a semiconductor element mounted on the main surface, and a sealing resin that contacts the main surface and covers the semiconductor element, and the lead has a plurality of grooves formed therein that are recessed from the main surface and positioned apart from each other, and the plurality of grooves are positioned away from the periphery of the main surface. [Effects of the Invention]

[0007] According to the semiconductor device according to the present disclosure, it is possible to improve the adhesion between the leads and the sealing resin.

[0008] Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings. [Brief explanation of the drawings]

[0009] [Figure 1] FIG. 1 is a perspective view of a semiconductor device according to a first embodiment of the present disclosure. [Figure 2] FIG. 2 is a plan view of the semiconductor device shown in FIG. [Figure 3] FIG. 3 is a plan view corresponding to FIG. 2, seen through the sealing resin. [Figure 4] FIG. 4 is a bottom view of the semiconductor device shown in FIG. [Figure 5] FIG. 5 is a front view of the semiconductor device shown in FIG. [Figure 6] FIG. 6 is a cross-sectional view taken along line VI-VI in FIG. [Figure 7] FIG. 7 is a cross-sectional view taken along line VII-VII in FIG. [Figure 8] FIG. 8 is a partially enlarged view of the semiconductor element and its vicinity shown in FIG. [Figure 9] FIG. 9 is a partially enlarged view of the semiconductor element and its vicinity shown in FIG. [Figure 10] FIG. 10 is a partially enlarged view of the covering portion of the terminal (first terminal) shown in FIG. 6 and its vicinity. [Figure 11] FIG. 11 is a partially enlarged view of the lead shown in FIG. [Figure 12] FIG. 12 is a cross-sectional view taken along line XII-XII in FIG. [Figure 13] FIG. 13 is a partially enlarged plan view of a modification of the semiconductor device shown in FIG. 1, seen through the sealing resin. [Figure 14] FIG. 14 is a partially enlarged plan view of the semiconductor device according to the second embodiment of the present disclosure, seen through the sealing resin. [Figure 15] FIG. 15 is a partially enlarged plan view of a modification of the semiconductor device shown in FIG. 14, seen through the sealing resin. [Figure 16] FIG. 16 is a partially enlarged plan view of the semiconductor device according to the third embodiment of the present disclosure, seen through the sealing resin. [Figure 17] FIG. 17 is a partially enlarged plan view of a modification of the semiconductor device shown in FIG. 16, seen through the sealing resin. DETAILED DESCRIPTION OF THE INVENTION

[0010] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present disclosure will be described with reference to the accompanying drawings.

[0011] [First embodiment] A semiconductor device A10 according to a first embodiment of the present disclosure will be described with reference to FIGS. 1 to 12. The semiconductor device A10 is used in electronic devices equipped with a power conversion circuit, such as a DC-DC converter. The semiconductor device A10 includes leads 10, a semiconductor element 30, a first bonding layer 39, a plurality of conductive members 40, and a sealing resin 50. For ease of understanding, FIGS. 3, 8, and 11 show the sealing resin 50 through which light is transmitted. In FIG. 3, the transmitted sealing resin 50 is indicated by an imaginary line (double-dashed line).

[0012] In describing the semiconductor device A10, for convenience, the thickness direction of the lead 10 will be referred to as the "thickness direction z." The direction perpendicular to the thickness direction z will be referred to as the "first direction x." The direction perpendicular to both the thickness direction z and the first direction x will be referred to as the "second direction y." When viewed along the thickness direction z, the first direction x corresponds to the longitudinal direction of the semiconductor device A10. When viewed along the thickness direction z, the second direction y corresponds to the lateral direction of the semiconductor device A10.

[0013] 3, 6, and 7, the lead 10 is a conductive member that carries the semiconductor element 30 and forms part of the conductive path between the semiconductor element 30 and a wiring board on which the semiconductor device A10 is mounted. In the semiconductor device A10, the lead 10 includes a die pad 11 and a plurality of terminals 12 that are positioned apart from each other.

[0014] As shown in FIGS. 6 and 7, the die pad 11 and the multiple terminals 12 include a substrate 101 and a metal layer 102. The substrate 101 forms a major portion of the lead 10 and is obtained from the same lead frame. The lead frame is made of copper (Cu) or a copper alloy. Therefore, the composition of the substrate 101 includes copper. The substrate 101 has a main surface 101A facing one side in the thickness direction z. The metal layer 102 is stacked on the main surface 101A. The thickness of the metal layer 102 is thinner than the thickness of the substrate 101. The composition of the metal layer 102 includes silver (Ag). Alternatively, the composition of the metal layer 102 may include nickel (Ni).

[0015] As shown in FIGS. 3 and 7 , the die pad 11 has a pad portion 111 and a terminal portion 112. The pad portion 111 includes a substrate 101 and a first metal layer 102A. The substrate 101 of the pad portion 111 has a first main surface 111A, a back surface 111B, and a through hole 111C. The first main surface 111A is included in the main surface 101A. The back surface 111B faces the opposite side to the first main surface 111A in the thickness direction z. The back surface 111B is plated with, for example, tin (Sn). The through hole 111C penetrates the pad portion 111 from the first main surface 111A to the back surface 111B in the thickness direction z. The through hole 111C has a circular shape when viewed along the thickness direction z. The first metal layer 102A is stacked on the first main surface 111A. The first metal layer 102A is included in the metal layer 102. As shown in FIG. 6, the thickness T of the base material 101 of the pad portion 111 is the maximum thickness t max Thicker than.

[0016] 3 and 7, the terminal portion 112 includes a portion extending in the first direction x and is connected to the base material 101 of the pad portion 111. Therefore, the pad portion 111 and the terminal portion 112 are electrically connected to each other. A portion of the terminal portion 112 is covered with the sealing resin 50. The portion of the terminal portion 112 covered with the sealing resin 50 is bent when viewed in the second direction y. The surface of the portion of the terminal portion 112 exposed from the sealing resin 50 is tin-plated.

[0017] As shown in FIGS. 3, 6, and 7, the semiconductor element 30 is mounted on the first main surface 111A of the pad portion 111 of the die pad 11. In the semiconductor device A10, the semiconductor element 30 is an n-channel, vertically structured metal-oxide-semiconductor field-effect transistor (MOSFET). The semiconductor element 30 includes a compound semiconductor substrate. The compound semiconductor substrate is primarily made of silicon carbide (SiC). Alternatively, silicon (Si) may be used as the primary material of the compound semiconductor substrate. In the semiconductor device A10, the area of ​​the semiconductor element 30 is 40% or less of the area of ​​the first main surface 111A when viewed along the thickness direction z. The semiconductor element 30 is not limited to a MOSFET. The semiconductor element 30 may be another transistor such as an insulated gate bipolar transistor (IGBT). Furthermore, the semiconductor element 30 may be an LSI or a diode. The semiconductor element 30 has a first electrode 31 , a second electrode 32 and a third electrode 33 .

[0018] 8 and 9, the first electrode 31 is provided on the side of the pad portion 111 of the die pad 11 facing the first main surface 111A in the thickness direction z. A current corresponding to the power converted by the semiconductor element 30 flows through the first electrode 31. In other words, the first electrode 31 corresponds to the source of the semiconductor element 30.

[0019] 9, the second electrode 32 is provided on the opposite side to the first electrode 31 in the thickness direction z. The second electrode 32 faces the first main surface 111A of the pad portion 111 of the die pad 11. A current corresponding to the power before being converted by the semiconductor element 30 flows through the second electrode 32. In other words, the second electrode 32 corresponds to the drain of the semiconductor element 30.

[0020] 8, the third electrode 33 is provided on the same side as the first electrode 31 in the thickness direction z, and is located away from the first electrode 31. A gate voltage for driving the semiconductor element 30 is applied to the third electrode 33. In other words, the third electrode 33 corresponds to the gate of the semiconductor element 30. When viewed along the thickness direction z, the area of ​​the third electrode 33 is smaller than the area of ​​the first electrode 31.

[0021] As shown in FIG. 9 , the first bonding layer 39 is interposed between the first main surface 111A of the pad portion 111 of the die pad 11 and the second electrode 32 of the semiconductor element 30. The first bonding layer 39 is in contact with the first metal layer 102A of the pad portion 111 and the second electrode 32. The first bonding layer 39 is located on the first metal layer 102A. The first bonding layer 39 contains a metal element. The metal element is, for example, tin. The first bonding layer 39 is, for example, solder. The second electrode 32 is conductively bonded to the pad portion 111 via the first bonding layer 39. Therefore, the terminal portion 112 of the die pad 11 corresponds to the drain terminal of the semiconductor device A10.

[0022] As shown in FIG. 3 , the multiple terminals 12 are electrically connected to the semiconductor element 30. The multiple terminals 12 have a covered portion 121 and an exposed portion 122. The covered portion 121 is covered with the sealing resin 50. The covered portion 121 includes a base material 101 and a second metal layer 102B. The base material 101 of the covered portion 121 has a second main surface 121A. The second main surface 121A is included in the main surface 101A. The second metal layer 102B is stacked on the second main surface 121A. The second metal layer 102B is included in the metal layer 102. When viewed along the thickness direction z, the area of ​​the second metal layer 102B is smaller than the area of ​​the first metal layer 102A of the pad portion 111 of the die pad 11. The exposed portion 122 is connected to the base material 101 of the covered portion 121 and is exposed from the sealing resin 50. The exposed portion 122 extends from the covered portion 121 in the first direction x toward a side away from the pad portion 111 of the die pad 11. The surface of the exposed portion 122 is plated with, for example, tin.

[0023] 3, in the semiconductor device A10, the multiple terminals 12 include a first terminal 12A and a second terminal 12B. The first terminal 12A extends along the first direction x and is located adjacent to the terminal portion 112 of the die pad 11 in the second direction y. The first terminal 12A is electrically connected to the first electrode 31 of the semiconductor element 30. Therefore, the first terminal 12A corresponds to the source terminal of the semiconductor device A10.

[0024] 3, the second terminal 12B extends along the first direction x and is located on the opposite side of the first terminal 12A in the second direction y, with the terminal portion 112 of the die pad 11 sandwiched therebetween. The second terminal 12B is electrically connected to the third electrode 33 of the semiconductor element 30. Therefore, the second terminal 12B corresponds to the gate terminal of the semiconductor device A10.

[0025] 5, in the semiconductor device A10, the height h of the portion of the terminal portion 112 of the die pad 11 exposed from the sealing resin 50, the exposed portion 122 of the first terminal 12A, and the exposed portion 122 of the second terminal 12B are all equal. When viewed along the second direction y, a portion of the terminal portion 112 overlaps the exposed portion 122 of the first terminal 12A and the exposed portion 122 of the second terminal 12B.

[0026] As shown in FIGS. 3, 11, and 12, a plurality of grooves 20 are formed in the lead 10 (die pad 11 and a plurality of terminals 12). The grooves 20 are recessed from the main surface 101A (first main surface 111A and second main surface 121A) of the substrate 101 and are spaced apart from one another. As shown in FIGS. 3, 6, and 7, the grooves 20 are located away from the periphery 101B of the main surface 101A. The grooves 20 are formed by laser processing the main surface 101A. In FIG. 3, the portion of the lead 10 in which the grooves 20 are formed is indicated by a region of multiple straight lines.

[0027] As shown in FIG. 11, the multiple grooves 20 include multiple first grooves 21 and multiple second grooves 22. The multiple first grooves 21 and multiple second grooves 22 are arranged along a first direction x. The multiple first grooves 21 and multiple second grooves 22 are linear and extend in a direction perpendicular to the thickness direction z. As a result, the multiple first grooves 21 and multiple second grooves 22 form a dashed line when viewed along the thickness direction z. In FIG. 11, the multiple second grooves 22 are indicated by multiple dotted regions.

[0028] 11 , in the semiconductor device A10, the multiple first grooves 21 and the multiple second grooves 22 extend in the first direction x. The multiple second grooves 22 are located adjacent to the multiple first grooves 21 in the second direction y. In the first direction x, at least a portion of any of the multiple second grooves 22 is located between two of the multiple first grooves 21 that are adjacent to each other in the first direction x. The length L2 of each of the multiple second grooves 22 is longer than the length L1 of each of the multiple first grooves 21.

[0029] 3, in the pad portion 111 of the die pad 11 of the lead 10, the grooves 20 surround the first bonding layer 39 and the first metal layer 102A when viewed along the thickness direction z. Furthermore, in the covering portions 121 of the terminals 12 of the lead 10, the grooves 20 surround the second metal layer 102B when viewed along the thickness direction z.

[0030] 3, the plurality of conductive members 40 are conductively joined to the semiconductor element 30 and the plurality of terminals 12. This establishes mutual conduction between the semiconductor element 30 and the plurality of terminals 12. The plurality of conductive members 40 include a first member 41 and a second member 42.

[0031] As shown in FIGS. 3, 9, and 10, the first member 41 is electrically connected to the first electrode 31 of the semiconductor element 30 and the second metal layer 102B of the coating 121 of the first terminal 12A. This electrically connects the first terminal 12A to the first electrode 31. The first member 41 contains copper. In the semiconductor device A10, the first member 41 is a metal clip. The first member 41 is electrically connected to the first electrode 31 and the second metal layer 102B via a second bonding layer 49. The second bonding layer 49 contains a metal element. The metal element is, for example, tin. The second bonding layer 49 is, for example, solder. As shown in FIG. 9, the thickness t2 of the second bonding layer 49 is smaller than the thickness t1 of the first bonding layer 39. Alternatively, the first member 41 may be a wire. In this case, the first member 41 is formed by wire bonding, eliminating the need for the second bonding layer 49.

[0032] 3 and 8, the second member 42 is electrically connected to the third electrode 33 of the semiconductor element 30 and the second metal layer 102B of the covering portion 121 of the second terminal 12B. This electrically connects the second terminal 12B to the third electrode 33. The second member 42 is a wire. The second member 42 is formed by wire bonding. The composition of the second member 42 includes aluminum (Al).

[0033] The differences between the first member 41 and the second member 42 will be described below. The Young's modulus (elastic modulus) of the second member 42 is smaller than that of the first member 41. As described above, this is because the composition of the first member 41 contains copper and the composition of the second member 42 contains aluminum. Therefore, the linear expansion coefficient of the second member 42 is larger than that of the first member 41. In addition, the thermal conductivity of the second member 42 is smaller than that of the first member 41. Furthermore, as shown in FIG. 8, the width B of the first member 41 is larger than the width (diameter) D of the second member 42.

[0034] As shown in FIGS. 6 and 7 , the sealing resin 50 covers the semiconductor element 30, the plurality of conductive members 40, and portions of the die pad 11 and the plurality of terminals 12. The sealing resin 50 contacts the main surface 101A of the base material 101 of the lead 10. The sealing resin 50 has electrical insulating properties. The sealing resin 50 is made of a material containing, for example, black epoxy resin. The sealing resin 50 has a top surface 51, a bottom surface 52, a pair of first side surfaces 53, a pair of second side surfaces 54, a pair of openings 55, and a mounting hole 56.

[0035] 6 and 7, the top surface 51 faces the same side as the first main surface 111A of the pad portion 111 of the die pad 11 in the thickness direction z. As shown in FIGS. 5 to 7, the bottom surface 52 faces the opposite side to the top surface 51 in the thickness direction z. The back surface 111B of the pad portion 111 is exposed from the bottom surface 52.

[0036] 2 and 4, the pair of first side surfaces 53 are spaced apart from each other in the first direction x. The pair of first side surfaces 53 are connected to the top surface 51 and the bottom surface 52. As shown in FIG. 5, a part of the terminal portion 112 of the die pad 11 and exposed portions 122 of the first terminals 12A and the second terminals 12B are exposed from one of the pair of first side surfaces 53.

[0037] As shown in FIGS. 2, 4, and 5, the pair of second side surfaces 54 are spaced apart from each other in the second direction y. The pair of second side surfaces 54 are connected to the top surface 51 and the bottom surface 52. As shown in FIG. 2, the pair of openings 55 are spaced apart from each other in the second direction y. Each of the pair of openings 55 is recessed inward into the sealing resin 50 from the top surface 51 and one of the pair of second side surfaces 54. The first main surface 111A of the pad portion 111 of the die pad 11 is exposed through the pair of openings 55. As shown in FIGS. 2, 4, and 7, the mounting hole 56 penetrates the sealing resin 50 from the top surface 51 to the bottom surface 52 in the thickness direction z. When viewed along the thickness direction z, the mounting hole 56 is contained within the through hole 111C of the pad portion 111 of the die pad 11. The inner circumferential surface of the pad portion 111, which defines the through hole 111C, is covered with the sealing resin 50. As a result, the maximum dimension of the attachment hole 56 is smaller than the dimension of the through hole 111C when viewed along the thickness direction z.

[0038] <Modification of the first embodiment> Next, a semiconductor device A11, which is a modified example of the semiconductor device A10, will be described with reference to Fig. 13. Here, the position in Fig. 13 is the same as the position in Fig. 11. As in Fig. 11, Fig. 13 also shows a view through the sealing resin 50, and the multiple second grooves 22 are shown as multiple dotted regions.

[0039] The semiconductor device A11 differs from the semiconductor device A10 in the configuration of the plurality of second grooves 22 among the plurality of grooves 20. As shown in Fig. 13 , when viewed along the second direction y, both sides of any of the plurality of second grooves 22 in the first direction x overlap with two of the plurality of first grooves 21 that are adjacent to each other in the first direction x. This configuration is obtained by setting the length L2 of each of the plurality of second grooves 22 to be longer than the length L2 in the case of the semiconductor device A10.

[0040] Next, the effects of the semiconductor device A10 will be described.

[0041] The semiconductor device A10 includes a lead 10 having a principal surface 101A, a semiconductor element 30 mounted on the principal surface 101A, and a sealing resin 50 in contact with the principal surface 101A and covering the semiconductor element 30. The lead 10 has a plurality of grooves 20 formed therein that are recessed from the principal surface 101A and spaced apart from one another. The grooves 20 are located away from a periphery 101B of the principal surface 101A. As a result, when the sealing resin 50 in contact with the principal surface 101A sinks into the grooves 20, an anchoring effect is exerted on the sealing resin 50. This increases the bonding strength of the sealing resin 50 to the principal surface 101A. Therefore, the semiconductor device A10 makes it possible to improve the adhesion between the lead 10 and the sealing resin 50.

[0042] The multiple grooves 20 include multiple first grooves 21 and multiple second grooves 22 arranged along the first direction x. The multiple first grooves 21 and multiple second grooves 22 are linear and extend in a direction perpendicular to the thickness direction z. As a result, the multiple first grooves 21 and multiple second grooves 22 are configured as dashed lines, which makes it possible to reduce the length of the multiple grooves 20 per unit area of ​​the main surface 101A of the lead 10. Therefore, according to the semiconductor device A10, it is possible to improve the adhesion between the lead 10 and the sealing resin 50 while reducing the laser processing time for forming the multiple grooves 20.

[0043] In the semiconductor device A10, the second grooves 22 are located adjacent to the first grooves 21 in the second direction y. The first grooves 21 and the second grooves 22 extend in the first direction x. In the first direction x, at least a portion of any of the second grooves 22 is located between two adjacent first grooves 21 among the first grooves 21. This allows the grooves 20 to resist shear stress from multiple directions that is transmitted to the interface between the main surface 101A of the lead 10 and the sealing resin 50. Therefore, it is possible to further increase the bonding strength of the sealing resin 50 to the main surface 101A while shortening the laser processing time for forming the grooves 20.

[0044] In the semiconductor device A11, when viewed along the second direction y, both sides in the first direction x of any of the plurality of second grooves 22 overlap with two adjacent first grooves 21 among the plurality of first grooves 21. This enables the plurality of grooves 20 to more firmly resist the shear stress in the second direction y that is transmitted to the interface between the main surface 101A of the lead 10 and the sealing resin 50.

[0045] The semiconductor device A10 further includes a conductive member 40 (first member 41) conductively bonded to a first electrode 31 of the semiconductor element 30 and a terminal 12 (first terminal 12A) that is an element of the lead 10. The terminal 12 includes a base 101 having a second main surface 121A and a metal layer 102 (second metal layer 102B) laminated on the second main surface 121A. The second main surface 121A is included in the main surface 101A on which the multiple grooves 20 are to be formed. The conductive member 40 is conductively bonded to the metal layer 102. The formation of the multiple grooves 20 improves adhesion between the base 101 of the terminal 12 and the sealing resin 50, thereby reducing shear stress transmitted to the bonding interface between the metal layer 102 and the conductive member 40. This prevents pitting corrosion of the conductive member 40. Furthermore, when the conductive member 40 is conductively joined to the metal layer 102 in the manufacture of the semiconductor device A10, the metal layer 102 has the effect of reducing the impact transmitted to the base material 101 due to the conductive joining.

[0046] The semiconductor device A10 further includes a bonding layer (first bonding layer 39) interposed between the first main surface 111A of the die pad 11 (pad portion 111) and the semiconductor element 30. The die pad 11 is one element of the lead 10. The first main surface 111A is included in the main surface 101A on which the plurality of grooves 20 are to be formed. When the formation of the plurality of grooves 20 improves the adhesion between the die pad 11 and the sealing resin 50, the shear stress transmitted to the interface between the first main surface 111A and the sealing resin 50 is less likely to reach the bonding layer. This makes it possible to prevent cracks from occurring in the bonding layer.

[0047] In the above case, it is preferable that the plurality of grooves 20 surround the bonding layer when viewed along the thickness direction z. This effectively reduces the shear stress that reaches the bonding layer from the interface between the first main surface 111A of the die pad 11 and the sealing resin 50. Furthermore, when bonding the semiconductor element 30 to the die pad 11 in the manufacture of the semiconductor device A10, the plurality of grooves 20 can prevent the bonding layer (if the bonding layer is solder) melted by reflow from excessively spreading over the first main surface 111A. This prevents the bonding layer from adhering to the terminals 12, thereby preventing short circuits between the die pad 11 and the terminals 12. Furthermore, it is possible to suppress misalignment of the semiconductor element 30 with respect to the first main surface 111A caused by the melted bonding layer.

[0048] When viewed along the thickness direction z, the multiple grooves 20 surround the first metal layer 102A stacked on the first main surface 111A of the die pad 11. The bonding layer is located on the first metal layer 102A. This improves the wettability of the bonding layer (if the bonding layer is solder) to the die pad 11 when bonding the semiconductor element 30 to the die pad 11 in the manufacture of the semiconductor device A10, while preventing the bonding layer from spreading over the first main surface 111A.

[0049] The thickness t1 of the first bonding layer 39 is greater than the thickness t2 of the second bonding layer 49. As a result, when the semiconductor device A10 is in use, heat generated from the semiconductor element 30 is more likely to be conducted to the die pad 11, which has a larger volume than each of the plurality of conductive members 40. This improves the heat dissipation performance of the semiconductor device A10.

[0050] The composition of the base material 101 of the lead 10 includes copper. Furthermore, the thickness T of the base material 101 of the pad portion 111 of the die pad 11 is set to be equal to or smaller than the maximum thickness t max This makes it possible to improve the efficiency of heat conduction in the direction perpendicular to the thickness direction z while improving the thermal conductivity of the pad portion 111. This contributes to improving the heat dissipation performance of the die pad 11.

[0051] The base material 101 of the pad portion 111 has a back surface 111B facing the opposite side to the first main surface 111A in the thickness direction z. The back surface 111B is exposed from the bottom surface 52 of the sealing resin 50. This allows the sealing resin 50 to protect the semiconductor element 30 and the conductive member 40 from external factors, while preventing a decrease in the heat dissipation performance of the semiconductor device A10.

[0052] Second Embodiment A semiconductor device A20 according to a second embodiment of the present disclosure will be described with reference to FIG. 14. In this figure, elements that are the same as or similar to those of the semiconductor device A10 described above are given the same reference numerals, and duplicated explanations will be omitted. Here, the position in FIG. 13 is the same as the position in FIG. 11, which shows the semiconductor device A10. As in FIG. 11, FIG. 13 also shows a view through the sealing resin 50, and multiple second grooves 22 are shown as multiple dotted regions.

[0053] The semiconductor device A20 differs from the semiconductor device A10 in the configuration of the plurality of grooves 20 described above.

[0054] 14 , the multiple first grooves 21 extend in a first direction x. The multiple second grooves 22 extend in a second direction y. When viewed along the second direction y, any one of the multiple second grooves 22 overlaps any one of the multiple first grooves 21. The length L2 of each of the multiple second grooves 22 is shorter than the length L1 of each of the multiple first grooves 21.

[0055] <Modification of the second embodiment> Next, a semiconductor device A21, which is a modified example of the semiconductor device A20, will be described with reference to Fig. 15. Here, the position in Fig. 15 is the same as the position in Fig. 14. As in Fig. 14, Fig. 15 also shows the view through the sealing resin 50, and the multiple second grooves 22 are shown as multiple dotted regions.

[0056] The semiconductor device A21 differs from the semiconductor device A20 in the configuration of the second grooves 22 among the grooves 20. As shown in Fig. 15 , in the first direction x, any one of the second grooves 22 is located between two first grooves 21 adjacent to each other in the first direction x among the first grooves 21.

[0057] Next, the effects of the semiconductor device A20 will be described.

[0058] The semiconductor device A20 includes a lead 10 having a main surface 101A, a semiconductor element 30 mounted on the main surface 101A, and a sealing resin 50 that contacts the main surface 101A and covers the semiconductor element 30. The lead 10 has a plurality of grooves 20 formed therein that are recessed from the main surface 101A and spaced apart from one another. The plurality of grooves 20 are located away from a periphery 101B of the main surface 101A. Therefore, the semiconductor device A20 also makes it possible to improve the adhesion between the lead 10 and the sealing resin 50.

[0059] In the semiconductor device A20, the multiple grooves 20 also include multiple first grooves 21 and multiple second grooves 22 arranged along the first direction x. The multiple first grooves 21 and multiple second grooves 22 are linear and extend in a direction perpendicular to the thickness direction z. Therefore, the semiconductor device A20 also makes it possible to improve the adhesion between the lead 10 and the sealing resin 50 while shortening the laser processing time for forming the multiple grooves 20.

[0060] In the semiconductor device A20, the second grooves 22 are located adjacent to the first grooves 21 in the second direction y. The first grooves 21 extend in the first direction x. The second grooves 22 extend in the second direction y. This allows the grooves 20 to resist shear stress from multiple directions that is transmitted to the interface between the main surface 101A of the lead 10 and the sealing resin 50. Furthermore, the length of the grooves 20 per unit area of ​​the main surface 101A can be made shorter than in the semiconductor device A10. Therefore, the semiconductor device A20 can further reduce the laser processing time for forming the grooves 20 while further increasing the bonding strength of the sealing resin 50 to the main surface 101A.

[0061] In the semiconductor device A21, any one of the plurality of second grooves 22 is located between two adjacent first grooves 21 among the plurality of first grooves 21 in the first direction x. This allows the distance between two adjacent first grooves 21 among the plurality of first grooves 21 in the first direction x to be set longer. Therefore, the extension of the plurality of grooves 20 per unit area of ​​the main surface 101A of the lead 10 can be further reduced compared to the case of the semiconductor device A20.

[0062] In the semiconductor device A20, the length L2 of each of the multiple second grooves 22 is shorter than the length L1 of each of the multiple first grooves 21. This configuration prevents the distance between two adjacent first grooves 21 in the second direction y from increasing excessively, thereby ensuring an increase in the bonding strength of the lead 10 to the main surface 101A.

[0063] Furthermore, since the semiconductor device A20 has the same configuration as the semiconductor device A10, the semiconductor device A20 also achieves the same effects as those of the configuration.

[0064] Third Embodiment A semiconductor device A30 according to a third embodiment of the present disclosure will be described with reference to FIG. 16. In this figure, elements that are the same as or similar to those of the semiconductor device A10 described above are given the same reference numerals, and redundant description will be omitted. Here, the position in FIG. 16 is the same as the position in FIG. 11, which shows the semiconductor device A10. As in FIG. 11, FIG. 16 also shows a view through the sealing resin 50, and multiple second grooves 22 are shown as multiple dotted regions.

[0065] The semiconductor device A30 differs from the semiconductor device A10 in the configuration of the plurality of grooves 20 described above.

[0066] 16, the multiple first grooves 21 extend in a first direction x. The multiple second grooves 22 extend in a second direction y. Any one of the multiple second grooves 22 is located between two adjacent first grooves 21 among the multiple first grooves 21.

[0067] <Modification of the third embodiment> Next, a semiconductor device A31, which is a modified example of the semiconductor device A30, will be described with reference to Fig. 17. Here, the position in Fig. 17 is the same as the position in Fig. 16. As in Fig. 16, Fig. 17 also shows the view through the sealing resin 50, and the multiple second grooves 22 are shown as multiple dotted regions.

[0068] The semiconductor device A31 differs from the semiconductor device A30 in the configuration of the multiple grooves 20. As shown in FIG. 17 , the multiple grooves 20 include multiple third grooves 23. The multiple third grooves 23 are arranged along the first direction x and are located adjacent to the multiple first grooves 21 in the second direction y. The multiple third grooves 23 extend in the first direction x. Any of the multiple second grooves 22 is located between two of the multiple third grooves 23 that are adjacent to each other in the first direction x. In other words, both sides of any of the multiple second grooves 22 in the second direction y are sandwiched between two first grooves 21 that are adjacent to each other in the first direction x and two third grooves 23 that are adjacent to each other in the first direction x.

[0069] Next, the effects of the semiconductor device A30 will be described.

[0070] The semiconductor device A30 includes a lead 10 having a principal surface 101A, a semiconductor element 30 mounted on the principal surface 101A, and a sealing resin 50 that contacts the principal surface 101A and covers the semiconductor element 30. The lead 10 has a plurality of grooves 20 formed therein that are recessed from the principal surface 101A and spaced apart from one another. The plurality of grooves 20 are located away from a periphery 101B of the principal surface 101A. Therefore, the semiconductor device A30 also makes it possible to improve the adhesion between the lead 10 and the sealing resin 50.

[0071] In the semiconductor device A30, the multiple grooves 20 also include multiple first grooves 21 and multiple second grooves 22 arranged along the first direction x. The multiple first grooves 21 and multiple second grooves 22 are linear and extend in a direction perpendicular to the thickness direction z. Therefore, the semiconductor device A30 also makes it possible to improve the adhesion between the lead 10 and the sealing resin 50 while shortening the laser processing time for forming the multiple grooves 20.

[0072] In the semiconductor device A30, the multiple first grooves 21 extend in the first direction x. The multiple second grooves 22 extend in the second direction y. Any of the multiple second grooves 22 is located between two adjacent first grooves 21 among the multiple first grooves 21. This allows the multiple grooves 20 to resist shear stress from multiple directions transmitted to the interface between the main surface 101A of the lead 10 and the sealing resin 50. Furthermore, the length of the multiple grooves 20 per unit area of ​​the main surface 101A can be shortened compared to the semiconductor device A10. Therefore, according to the semiconductor device A30, it is possible to further reduce the laser processing time for forming the multiple grooves 20 while further increasing the bonding strength of the sealing resin 50 to the main surface 101A.

[0073] In the semiconductor device A31, the multiple grooves 20 are arranged along the first direction x and include multiple third grooves 23 located adjacent to the multiple first grooves 21 in the second direction y. The multiple third grooves 23 extend in the first direction x. Any one of the multiple second grooves 22 is located between two adjacent third grooves 23 among the multiple third grooves 23. This enables the multiple grooves 20 to more strongly resist shear stress in the first direction x that is transmitted to the interface between the main surface 101A of the lead 10 and the sealing resin 50.

[0074] Furthermore, since the semiconductor device A30 has the same configuration as the semiconductor device A10, the semiconductor device A30 also achieves the same effects as those of the configuration.

[0075] The present disclosure is not limited to the above-described embodiment, and the specific configuration of each part of the present disclosure can be freely modified in various ways.

[0076] The technical configurations of the semiconductor device and the method for manufacturing the semiconductor device provided by the present disclosure are additionally noted below. [Appendix 1] a lead having a main surface facing in a thickness direction; a semiconductor element mounted on the main surface; a sealing resin that contacts the main surface and covers the semiconductor element, The lead has a plurality of grooves formed therein that are recessed from the main surface and spaced apart from one another; The semiconductor device, wherein the plurality of grooves are located away from the periphery of the main surface. [Appendix 2] the plurality of grooves include a plurality of first grooves and a plurality of second grooves arranged along a first direction that is a direction perpendicular to the thickness direction, 2. The semiconductor device according to claim 1, wherein the first grooves and the second grooves are linear and extend in a direction perpendicular to the thickness direction. [Appendix 3] 3. The semiconductor device according to claim 2, wherein the second grooves are located adjacent to the first grooves in a second direction perpendicular to the thickness direction and the first direction. [Appendix 4] the plurality of first grooves and the plurality of second grooves extend in the first direction, 4. The semiconductor device according to claim 3, wherein at least a portion of any of the plurality of second grooves is located between two adjacent first grooves of the plurality of first grooves in the first direction. [Appendix 5] The semiconductor device described in Appendix 4, wherein, when viewed along the second direction, both sides of any of the plurality of second grooves in the first direction overlap with two adjacent first grooves among the plurality of first grooves. [Appendix 6] 6. The semiconductor device according to claim 4, wherein the length of each of the second grooves is longer than the length of each of the first grooves. [Appendix 7] the plurality of first grooves extend in the first direction, 4. The semiconductor device according to claim 3, wherein the second grooves extend in the second direction. [Appendix 8] 8. The semiconductor device according to claim 7, wherein any one of the second grooves is located between two adjacent first grooves of the first grooves in the first direction. [Appendix 9] 9. The semiconductor device according to claim 7, wherein the length of each of the second grooves is shorter than the length of each of the first grooves. [Appendix 10] the plurality of first grooves extend in the first direction, the plurality of second grooves extend in a second direction perpendicular to the thickness direction and the first direction, 3. The semiconductor device according to claim 2, wherein any one of the second grooves is located between two adjacent first grooves among the first grooves. [Appendix 11] the plurality of grooves are arranged along the first direction and include a plurality of third grooves located adjacent to the plurality of first grooves in the second direction, the plurality of third grooves extend in the first direction, 11. The semiconductor device according to claim 10, wherein any one of the second grooves is located between two adjacent third grooves among the third grooves. [Appendix 12] the lead includes a die pad and a terminal spaced apart from each other; the main surface includes a first main surface included in the die pad and a second main surface included in the terminal, the semiconductor element is mounted on the first main surface, 12. The semiconductor device according to claim 1, wherein the terminal is electrically connected to the semiconductor element. [Appendix 13] the semiconductor element has a first electrode provided on a side toward which the first main surface faces in the thickness direction, 13. The semiconductor device according to claim 12, further comprising a conductive member conductively joined to the first electrode and the terminal. [Appendix 14] the terminal includes a substrate having the second main surface and a metal layer laminated on the second main surface; 14. The semiconductor device according to claim 13, wherein the conductive member is conductively joined to the metal layer. [Appendix 15] a bonding layer interposed between the first main surface and the semiconductor element, 15. The semiconductor device according to claim 13, wherein the bonding layer contains a metal element. [Appendix 16] the semiconductor element has a second electrode provided on the opposite side to the first electrode in the thickness direction, 16. The semiconductor device according to claim 15, wherein the second electrode is conductively joined to the die pad via the joining layer. [Appendix 17] 17. The semiconductor device according to claim 15, wherein the plurality of grooves surround the bonding layer when viewed along the thickness direction. [Explanation of symbols]

[0077] A10, A20, A30: Semiconductor device 10: Lead 101: Base material 101A: Main surface 101B: Periphery 102: Metal layer 102A: 1st metal layer 102B: Second metal layer 11: Die pad 111: Pad section 111A: 1st main surface 111B: Back side 111C: Through hole 112:Terminal section 12: Terminal 12A: First terminal 12B: Second terminal 121: Covering part 121A: Second main surface 122:Exposed part 20: Groove 21: 1st groove 22:Second groove 23: Third groove 30: Semiconductor element 31: 1st electrode 32:Second electrode 33: Third electrode 39: 1st bonding layer 40: Conductive material 41: First member 42: Second member 49:Second bonding layer 50: Sealing resin 51:Top surface 52: Bottom 53:1st side 54:Second side 55:Aperture 56: Mounting hole L1, L2: length z: thickness direction x: 1st direction y: Second direction

Claims

1. a lead having a main surface facing one side in a thickness direction; a semiconductor element mounted on the main surface; a sealing resin in contact with the main surface and covering the semiconductor element, The lead has a plurality of grooves recessed from the main surface and spaced apart from one another, the plurality of grooves are spaced from the periphery of the main surface; the plurality of grooves include a plurality of first grooves and a plurality of second grooves arranged along a first direction perpendicular to the thickness direction, each of the plurality of first grooves and each of the plurality of second grooves are linear and extend in a direction perpendicular to the thickness direction; At least two of the plurality of first grooves and at least two of the plurality of second grooves are alternately arranged in the first direction.

2. a lead having a main surface facing one side in a thickness direction; a semiconductor element mounted on the main surface; a sealing resin in contact with the main surface and covering the semiconductor element, The lead has a plurality of grooves recessed from the main surface and spaced apart from one another, the plurality of grooves are spaced from the periphery of the main surface; the plurality of grooves include a plurality of first grooves and a plurality of second grooves arranged along a first direction perpendicular to the thickness direction, each of the plurality of first grooves and each of the plurality of second grooves are linear and extend in a direction perpendicular to the thickness direction; At least two of the plurality of first grooves and at least two of the plurality of second grooves are alternately arranged in a second direction perpendicular to each of the thickness direction and the first direction.

3. each of the plurality of first grooves and each of the plurality of second grooves extends in the first direction; 3 . The semiconductor device according to claim 1 , wherein at least a portion of any one of the plurality of second grooves is located between two adjacent first grooves of the plurality of first grooves in the first direction.

4. 3 . The semiconductor device according to claim 2 , wherein, when viewed in the second direction, both sides of any one of the plurality of second grooves in the first direction overlap with two adjacent first grooves among the plurality of first grooves.

5. 5. The semiconductor device according to claim 3, wherein the length of each of the plurality of second grooves is longer than the length of each of the plurality of first grooves.

6. Each of the plurality of first grooves extends in the first direction, The semiconductor device according to claim 2 , wherein each of said plurality of second grooves extends in said second direction.

7. 7. The semiconductor device according to claim 6, wherein any one of the plurality of second grooves is located between two adjacent first grooves of the plurality of first grooves in the first direction.

8. 8. The semiconductor device according to claim 6, wherein a length of each of said second grooves is shorter than a length of each of said first grooves.

9. Each of the plurality of first grooves extends in the first direction, each of the plurality of second grooves extends in a second direction perpendicular to both the thickness direction and the first direction; The semiconductor device according to claim 1 , wherein any one of the plurality of second grooves is located between two adjacent first grooves of the plurality of first grooves.

10. the plurality of grooves are arranged along the first direction and include a plurality of third grooves located adjacent to the plurality of first grooves in the second direction; Each of the plurality of third grooves extends in the first direction, The semiconductor device according to claim 9 , wherein any one of the plurality of second grooves is located between two adjacent third grooves of the plurality of third grooves.

11. the lead includes a die pad and a terminal spaced apart from each other; the main surface includes a first main surface included in the die pad and a second main surface included in the terminal, the semiconductor element is mounted on the first main surface, 11. The semiconductor device according to claim 1, wherein the terminal is electrically connected to the semiconductor element.

12. Further comprising a conductive member, the semiconductor element has a first electrode provided on a side toward which the first main surface faces in the thickness direction, The semiconductor device according to claim 11 , wherein the conductive member is conductively joined to each of the first electrode and the terminal.

13. the terminal includes a substrate having the second main surface and a metal layer laminated on the second main surface; The semiconductor device according to claim 12 , wherein the conductive member is conductively joined to the metal layer.

14. a bonding layer interposed between the first main surface and the semiconductor element; The semiconductor device according to claim 12 or 13, wherein the bonding layer contains a metal element.

15. the semiconductor element has a second electrode provided on the opposite side to the first electrode in the thickness direction, The semiconductor device according to claim 14 , wherein the second electrode is electrically connected to the die pad via the bonding layer.

16. The semiconductor device according to claim 14 , wherein the plurality of grooves surround the bonding layer when viewed in the thickness direction.

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