Substrate processing apparatus

Abstract

To provide a technology that can improve the gas supply efficiency between substrates.SOLUTION: A substrate processing apparatus according to one embodiment of the present disclosure comprises: a reaction tube; a gas inlet section for introducing gas into the reaction tube; a gas exhaust section for discharging gas introduced into the reaction tube; and a housing that internally accommodates the reaction tube, the gas inlet section, and the gas exhaust section, the gas inlet section comprises a gas inlet duct attached to the outer wall of the reaction tube, and the gas inlet duct extends upward beyond the top surface of the reaction tube and penetrates the housing.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present disclosure relates to a substrate processing apparatus. [Background technology]

[0002] A batch-type substrate processing apparatus that processes a plurality of substrates at once is known (see, for example, Patent Document 1). In the substrate processing apparatus described in Patent Document 1, a gas supply area is provided on the outer wall of a reaction tube. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] International Publication No. 2015 / 041376 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a technique that can improve the efficiency of supplying gas between substrates. [Means for solving the problem]

[0005] A substrate processing apparatus according to one aspect of the present disclosure includes a reaction tube, a gas inlet section that introduces gas into the reaction tube, a gas exhaust section that exhausts the gas introduced into the reaction tube, and a housing that houses the reaction tube, the gas inlet section, and the gas exhaust section, wherein the gas inlet section has a gas inlet duct attached to an outer wall of the reaction tube, and the gas inlet duct extends above an upper surface of the reaction tube and penetrates the housing. [Effects of the Invention]

[0006] According to the present disclosure, the efficiency of supplying gas between substrates can be improved. [Brief explanation of the drawings]

[0007] [Figure 1]FIG. 1 is a perspective view (1) showing a substrate processing apparatus according to an embodiment. [Figure 2] FIG. 2 is a perspective view (2) showing the substrate processing apparatus according to the embodiment. [Figure 3] 1 is a vertical cross-sectional view showing a substrate processing apparatus according to an embodiment. [Figure 4] 1 is a horizontal cross-sectional view (1) showing a substrate processing apparatus according to an embodiment. [Figure 5] FIG. 2 is a horizontal cross-sectional view (2) showing the substrate processing apparatus according to the embodiment. [Figure 6] FIG. 2 is a diagram illustrating an example of an exhaust duct. DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, non-limiting exemplary embodiments of the present disclosure will be described with reference to the accompanying drawings. In all the accompanying drawings, the same or corresponding reference numerals are used to designate the same or corresponding members or components, and redundant descriptions will be omitted.

[0009] (Substrate processing equipment) A substrate processing apparatus 1 according to an embodiment will be described with reference to FIGS. 1 to 5. FIG. 1 is a perspective view showing the substrate processing apparatus 1 according to an embodiment, as viewed obliquely from above. FIG. 2 is a perspective view showing the substrate processing apparatus 1 according to an embodiment, as viewed obliquely from below. FIG. 3 is a vertical cross-sectional view showing the substrate processing apparatus 1 according to an embodiment. FIG. 4 is a horizontal cross-sectional view showing the substrate processing apparatus 1 according to an embodiment, as viewed along the line IV-IV in FIG. 3. FIG. 5 is a horizontal cross-sectional view showing the substrate processing apparatus 1 according to an embodiment, as viewed along the line VV in FIG. 3.

[0010] The substrate processing apparatus 1 is a batch-type apparatus that performs various processes collectively on a plurality of substrates W. The various processes include, for example, a film formation process for forming a film on the substrate W by atomic layer deposition (ALD) or chemical vapor deposition (CVD). The various processes may also include an etching process for removing a film formed on the substrate W.

[0011] The substrate processing apparatus 1 includes a reaction tube 10, a gas introduction section 20, a vacuum pipe 30, an exhaust duct 40, a housing 50, a heating section 60, a pressure reduction section 70, a pressure increase section 80, and an apparatus housing 90. The housing 50, the heating section 60, the pressure reduction section 70, the pressure increase section 80, and the apparatus housing 90 are not shown in FIGS. 1 and 2. The reaction tube 10, the vacuum pipe 30, and the exhaust duct 40 are joined together by, for example, welding, and are integrally configured. The reaction tube 10, the vacuum pipe 30, and the exhaust duct 40 are made of, for example, quartz.

[0012] The reaction tube 10 has a cylindrical shape with a ceiling and an open lower end. An inlet opening 10a and an exhaust opening 10b are provided on the outer wall of the reaction tube 10.

[0013] The inlet openings 10a penetrate the outer wall of the reaction tube 10. The inlet openings 10a are provided at positions in the circumferential direction of the reaction tube 10 where gas inlet ducts 211 to 218, which will be described later, are attached. A plurality of inlet openings 10a are provided at each position in the circumferential direction of the reaction tube 10 along the vertical direction from near the upper end to near the lower end of the reaction tube 10. In this case, it is easy to uniformly supply gas into the reaction tube 10 in a range from the upper end to the lower end.

[0014] The exhaust opening 10b penetrates the outer wall of the reaction tube 10. The exhaust opening 10b is provided at a position different from the inlet opening 10a in the circumferential direction of the reaction tube 10. The exhaust opening 10b is provided at a position in the circumferential direction of the reaction tube 10 where the exhaust duct 40 is attached. The exhaust opening 10b is a rectangular opening extending vertically from near the upper end to near the lower end of the reaction tube 10. In this case, it is easy to uniformly exhaust air from the upper end to the lower end of the reaction tube 10.

[0015] The opening at the bottom of the reaction tube 10 is airtightly closed by a lid (not shown). The lid is made of a metal such as stainless steel. A substrate holder 11 (FIG. 3) is housed inside the reaction tube 10. The substrate holder 11 holds a plurality of substrates W (FIG. 6) arranged in multiple stages in a horizontal position in the vertical direction. The number of substrates W is not limited, but may be, for example, 25 to 200. The substrates W are not shown in FIG. 3. The substrate holder 11 is made of, for example, quartz.

[0016] The gas introduction section 20 has gas introduction ducts 211 to 218, nozzles 221 to 228, gas introduction pipes 231 to 238, and on-off valves 241 to 248. In Fig. 3, gas introduction pipes 231 to 235 and on-off valves 241 to 245 are shown.

[0017] The gas introduction ducts 211-218 are provided along the circumferential direction of the reaction tube 10. The gas introduction ducts 211-218 are provided at intervals from each other in the circumferential direction of the reaction tube 10. In this case, the thermal influence from adjacent gas introduction ducts 211-218 can be reduced. This suppresses a temperature drop in the gas introduction ducts 211-218 and the generation of particles. The gas introduction ducts 211-218 are provided radially at intervals from each other in the circumferential direction of the reaction tube 10. In this case, as shown by the arrows in FIG. 5, gases such as source gas, reactive gas, etching gas, and purge gas can be supplied into the reaction tube 10 from multiple positions (multiple directions) in the circumferential direction of the reaction tube 10. This makes it easy to adjust the in-plane shape of the film formation or etching. For example, by adjusting the gas supply position and the gas supply amount, the residence time and gas concentration distribution of the gas supplied to the surface of the substrate W can be adjusted. Therefore, it is easier to control the in-plane shape of film formation and etching than with a unidirectional gas flow. Gas introduction ducts 211 to 218 are provided in this order, for example, counterclockwise from exhaust opening 10b.

[0018] The gas introduction ducts 211-218 are attached to the outer wall of the reaction tube 10. In this case, the distance from the gas introduction ducts 211-218 to the substrate is shortened. This reduces unnecessary thermal decomposition of gas. Furthermore, when the gas introduction ducts 211-218 are attached to the outer wall of the reaction tube 10, it is not necessary to dispose the nozzles 221-228 inside the reaction tube 10. This reduces the space between the outer peripheral edge of the substrate W and the inner wall of the reaction tube 10, thereby reducing the gas flow into this space. As a result, the efficiency of gas supply between vertically adjacent substrates W is improved. Furthermore, when the gas introduction ducts 211-218 are attached to the outer wall of the reaction tube 10, it is not necessary to protrude the side wall of the reaction tube 10 radially outward to form nozzle chambers for accommodating the nozzles 221-228. The gas introduction ducts 211-218 are, for example, integrally formed with the reaction tube 10. The gas introduction ducts 211 to 218 are made of, for example, quartz.

[0019] The gas introduction ducts 211-218 have a tubular shape with a closed lower end and an open upper end. The upper ends of the gas introduction ducts 211-218 extend above the upper surface of the reaction tube 10 and penetrate the casing 50. In this case, the upper space of the casing 50 can be used as a space for installing the gas introduction pipes 231-238 and the on-off valves 241-248. Therefore, the piping distance from the on-off valves 241-248 to the reaction tube 10 can be shortened. In addition, the shape of the gas introduction pipes 231-238 can be simplified. Gas holes 211a-218a (FIG. 5) are provided in the gas introduction ducts 211-218 at positions facing the reaction tube 10.

[0020] Each of the gas holes 211a-218a has a rectangular shape extending vertically from near the upper end to near the lower end of the reaction tube 10. Each of the gas holes 211a-218a extends, for example, from above the uppermost inlet opening 10a to below the lowermost inlet opening 10a. The gas flowing inside the gas inlet ducts 211-218 is discharged into the reaction tube 10 from the gas holes 211a-218a.

[0021] The gas inlet duct 211 is provided at an angle less than 90° counterclockwise from the exhaust duct 40 in the circumferential direction of the reaction tube 10. The gas inlet duct 212 is provided at an angle position 90° counterclockwise from the exhaust duct 40 in the circumferential direction of the reaction tube 10. The gas inlet ducts 213 and 214 are provided at an angle greater than 90° and less than 180° counterclockwise from the exhaust duct 40. The gas inlet duct 215 is provided at an angle position 180° counterclockwise from the exhaust duct 40 in the circumferential direction of the reaction tube 10. That is, the gas inlet duct 215 is provided at a position opposite to the exhaust duct 40. The gas inlet ducts 216 and 217 are provided at an angle greater than 180° and less than 270° counterclockwise from the exhaust duct 40. The gas introduction duct 218 is provided at an angular position of 270° counterclockwise from the exhaust duct 40. In other words, the gas introduction duct 218 is provided at a position opposite the gas introduction duct 212.

[0022] The nozzles 221-228 are detachably inserted into the gas introduction ducts 211-218. In this case, the shape of the nozzles 221-228 can be changed depending on the type of processing, and the optimal nozzles 221-228 can be used depending on the type of processing. The inner surfaces of the gas introduction ducts 211-218 have a shape that follows the outer surfaces of the nozzles 221-228, for example, and a gap is provided between the inner surfaces of the gas introduction ducts 211-218 and the outer surfaces of the nozzles 221-228. In this case, the volume of the space between the gas introduction ducts 211-218 and the nozzles 221-228 can be reduced. This prevents gas from accumulating in the space, improving the efficiency of gas supply to the substrate W. Furthermore, the surface area in contact with the gas is reduced, which prevents particle generation in the space. This makes cleaning the space easier. In a cross section perpendicular to the longitudinal direction of the nozzles 221 to 228, the inner surfaces of the gas introduction ducts 211 to 218 are, for example, circular, and the outer surfaces of the nozzles 221 to 228 are, for example, circular. In a cross section perpendicular to the longitudinal direction of the nozzles 221 to 228, the inner surfaces of the gas introduction ducts 211 to 218 may be elliptical, and the outer surfaces of the nozzles 221 to 228 may be elliptical.

[0023] The nozzles 221 to 228 are provided with gas discharge holes (not shown). The gas discharge holes are provided, for example, in the portions of the pipe walls of the nozzles 221 to 228 that are inserted into the gas introduction ducts 211 to 218. The upper ends of the nozzles 221 to 228 are connected to gas sources (not shown) via corresponding gas introduction pipes 231 to 238. Gas from the gas sources is introduced into the nozzles 221 to 228 from the upper ends thereof, and is discharged into the reaction tube 10 through the gas discharge holes, gas holes 211a to 218a, and introduction opening 10a. The nozzles 221 to 228 are not shown in FIGS. 2 to 5.

[0024] The nozzles 221-228 do not necessarily have to be provided. In this case, the upper ends of the gas introduction ducts 211-218 are connected to the gas sources via the corresponding gas introduction pipes 231-238. Gas from the gas sources is introduced into the gas introduction ducts 211-218 from the upper ends thereof and discharged into the reaction tube 10 via the gas holes 211a-218a. For example, when a gas that is easily thermally decomposed, such as hexachlorodisilane (HCD) gas or dichlorosilane (DCS) gas, is used, the nozzles 221-228 do not necessarily have to be provided.

[0025] The gas introduction pipes 231-238 are provided in the upper space of the housing 50. One end of the gas introduction pipes 231-238 is connected to the corresponding gas introduction ducts 211-218 or the corresponding nozzles 221-228, and the other end passes through the apparatus housing 90 and extends to the outside of the apparatus housing 90. The gas introduction pipes 231-238 are provided with on-off valves 241-248. The gas introduction pipes 231-238 may be provided with a flow rate controller such as a mass flow controller.

[0026] The on-off valves 241 to 248 are provided in the upper space of the casing 50. The on-off valves 241 to 248 are provided midway along the corresponding gas introduction pipes 231 to 238. The on-off valves 241 to 248 are attached to, for example, the inner wall of the apparatus casing 90. The on-off valves 241 to 248 are valves that switch the flow of gas on and off.

[0027] The vacuum pipe 30 has a cylindrical shape with a ceiling and an open lower end. The vacuum pipe 30 is installed at a distance from the reaction tube 10. An opening 30a (FIG. 5) is provided on the outer wall of the vacuum pipe 30 at the same position as the exhaust duct 40 in the circumferential direction of the vacuum pipe 30. The opening 30a is a rectangular opening extending vertically from near the upper end of the vacuum pipe 30 to near the lower end. The vertical length of the opening 30a may be the same as the vertical length of the exhaust opening 10b. The axis of the vacuum pipe 30 may be parallel to the axis of the reaction tube 10. The lower end of the vacuum pipe 30 is connected to an exhaust device (not shown) such as a vacuum pump via a piping (not shown). The flow path cross-sectional area of ​​the vacuum pipe 30 may be equal to or greater than the flow path cross-sectional area of ​​the exhaust duct 40. In this case, the exhaust flow velocity in the vertical direction becomes uniform, and a uniform laminar flow is formed in the vertical direction. This improves the inter-surface uniformity of film formation and etching.

[0028] The exhaust duct 40 connects the reaction tube 10 and the vacuum pipe 30. The exhaust duct 40 connects the inside of the reaction tube 10 with the inside of the vacuum pipe 30. One end of the exhaust duct 40 is connected to the outer wall of the reaction tube 10 so as to cover the exhaust opening 10b, and the other end is connected to the outer wall of the vacuum pipe 30 so as to cover the opening 30a. In this case, the length X (FIG. 4) occupied by the exhaust duct 40 in the circumferential direction of the reaction tube 10 can be shortened compared to the case where the vacuum pipe 30 is directly connected to the reaction tube 10 without providing the exhaust duct 40. Therefore, the length in the circumferential direction of the reaction tube 10 over which the gas introduction ducts 211-218 can be attached becomes longer. This allows the number of gas introduction ducts 211-218 to be provided on the outer wall of the reaction tube 10 to be increased. The exhaust duct 40 may be divided into multiple parts in the vertical direction. In this case, the gas flow from the inside of the reaction tube 10 toward the vacuum pipe 30 is rectified. Therefore, the uniformity of the gas flow at different positions in the vertical direction inside the reaction tube 10 is improved.

[0029] The housing 50 accommodates the reaction tube 10, the gas inlet 20, the vacuum pipe 30, the exhaust duct 40, and the heating unit 60. Since the housing 50 accommodates the heating unit 60 including a heater, it is also called a heater shell. The housing 50 has a bottom 51, a top 52, and a side 53. The bottom 51 supports the reaction tube 10 and the vacuum pipe 30. The top 52 is provided above the upper surface of the reaction tube 10 and the upper surface of the vacuum pipe 30. The top 52 covers the upper surface of the reaction tube 10 and the upper surface of the vacuum pipe 30. The side 53 is provided around the reaction tube 10, the gas inlet 20, the vacuum pipe 30, and the exhaust duct 40. The side 53 covers the periphery of the reaction tube 10, the gas inlet 20, the vacuum pipe 30, and the exhaust duct 40. The lower end of the side 53 is connected to the bottom 51, and the upper end is connected to the top 52. The bottom portion 51, the top portion 52, and the side portion 53 are, for example, separate bodies. Alternatively, the bottom portion 51, the top portion 52, and the side portion 53 may be integrally formed.

[0030] The heating unit 60 is provided inside the housing 50. The heating unit 60 includes a first side heater 61, a second side heater 62, a third side heater 63, a first ceiling heater 64, a second ceiling heater 65, and a lower heater 66. The first side heater 61, the second side heater 62, the third side heater 63, the first ceiling heater 64, the second ceiling heater 65, and the lower heater 66 are, for example, carbon wire heaters. In this case, the temperature of the substrate W accommodated inside the reaction tube 10 can be rapidly increased or decreased.

[0031] A plurality of first side heaters 61 are provided around the reaction tube 10. The plurality of first side heaters 61 are radially arranged at intervals in the circumferential direction of the reaction tube 10. Each first side heater 61 is provided at a position different from the exhaust duct 40 in the circumferential direction of the reaction tube 10. Each first side heater 61 may be divided into a plurality of heaters in the vertical direction. In this case, the temperature in the vertical direction can be independently adjusted by independently controlling the divided first side heaters 61. The first side heater 61 heats the substrate W accommodated inside the reaction tube 10 from the outside of the reaction tube 10 by thermal radiation, as indicated by the solid arrows in FIG. 4 .

[0032] The second side heater 62 is provided at a position different from that of the first side heater 61 in the circumferential direction of the reaction tube 10. The second side heater 62 is provided at a position different from that of the plurality of gas inlet ducts 211-218 in the circumferential direction of the reaction tube 10. The second side heater 62 is provided at a position including the same position as that of the exhaust duct 40 in the circumferential direction of the reaction tube 10. Since the exhaust duct 40 is provided around the reaction tube 10 at the same position as the exhaust duct 40 in the circumferential direction of the reaction tube 10, the second side heater 62 cannot be provided there. Therefore, the second side heater 62 is provided around the vacuum pipe 30. That is, the second side heater 62 is provided at a position farther from the center C1 of the reaction tube 10 than the first side heater 61. For example, the second side heater 62 is disposed on an imaginary half line L extending from the center C1 of the reaction tube 10 through the center C3 of the vacuum pipe 30 in a plan view. The second side heater 62 may be divided into multiple parts in the vertical direction. In this case, the temperature in the vertical direction can be independently adjusted by independently controlling the multiple divided second side heaters 62. As shown by the dashed arrows in FIG. 4, the second side heater 62 heats the vacuum pipe 30 and the exhaust duct 40 by thermal radiation and also heats the substrate W accommodated inside the reaction tube 10. As a result, the substrate W accommodated inside the reaction tube 10 is heated from all directions around the reaction tube 10 by the first side heater 61 and the second side heater 62. This improves the temperature uniformity within the substrate surface.

[0033] A plurality of third side heaters 63 are provided around the vacuum pipe 30. The plurality of third side heaters 63 are provided at intervals in the circumferential direction of the vacuum pipe 30. Each third side heater 63 is provided at a different position from the second side heater 62 in the circumferential direction of the vacuum pipe 30. Each third side heater 63 is provided so as not to include on the imaginary half line L in a plan view. Each third side heater 63 may be divided into multiple parts in the vertical direction. In this case, by independently controlling the multiple divided third side heaters 63, the temperature in the vertical direction can be independently adjusted. The third side heater 63 heats the vacuum pipe 30 as indicated by the dashed arrow in FIG. 4.

[0034] The first ceiling heater 64 is provided between the upper surface of the reaction tube 10 and the ceiling part 52 of the housing 50. The first ceiling heater 64 heats the substrate W accommodated inside the reaction tube 10 from above the reaction tube 10 by thermal radiation. The number of first ceiling heaters 64 may be one or two or more.

[0035] The second ceiling heater 65 is provided between the upper surface of the vacuum pipe 30 and the top part 52 of the housing 50. The second ceiling heater 65 heats the vacuum pipe 30 from above the vacuum pipe 30 by thermal radiation. The number of second ceiling heaters 65 may be one, or two or more.

[0036] A plurality of lower heaters 66 are provided around the lower part of the reaction tube 10. The plurality of lower heaters 66 are provided radially at intervals in the circumferential direction of the reaction tube 10. The lower heaters 66 are provided below the substrate holder 11. The lower heaters 66 heat the lower part of the reaction tube 10 by thermal radiation and suppress heat radiation from the opening at the lower end of the reaction tube 10.

[0037] The pressure reducing unit 70 reduces the pressure inside the housing 50. The pressure reducing unit 70 includes a pipe 71, a safety valve 72, an on-off valve 73, and a vacuum pump 74.

[0038] The pipe 71 is connected to a port 53a provided on the side portion 53 of the housing 50. The pipe 71 passes through the side portion 53 and the device housing 90 and extends to the outside of the device housing 90. The pipe 71 is provided with a safety valve 72, an on-off valve 73, and a vacuum pump 74, in this order from the housing 50 side. The safety valve 72, the on-off valve 73, and the vacuum pump 74 are provided, for example, outside the device housing 90. The safety valve 72, the on-off valve 73, and the vacuum pump 74 may also be provided outside the housing 50 and inside the device housing 90.

[0039] When the pressure inside the housing 50 exceeds a set pressure, the safety valve 72 changes from a closed state to an open state, thereby maintaining the pressure inside the housing 50 at or below the set pressure.

[0040] The on-off valve 73 is a valve that switches the flow of gas on and off.

[0041] The vacuum pump 74 reduces the pressure inside the housing 50 through the piping 71 .

[0042] When the on-off valve 73 is opened, the vacuum pump 74 depressurizes the interior of the housing 50. When the interior of the housing 50 is depressurized, heat transfer due to convection is suppressed. This suppresses heat transfer to the outside of the housing 50, allowing the space above the housing 50 to be used as a space for installing the on-off valves 241-248. Furthermore, since a heat insulating material is not required, the distance between the reaction tube 10 and the housing 50 can be reduced. This shortens the distance from the on-off valves 241-248 to the substrate, improving gas controllability. Furthermore, when the side heaters (the first side heater 61, the second side heater 62, and the third side heater 63) are divided into multiple heaters in the vertical direction, there is no influence of convection inside the housing 50, and the heaters are less likely to be affected by other heaters in the vertical direction. This improves temperature controllability between the surfaces (vertical direction). This makes it easy to selectively heat only the lower part of the reaction tube 10, selectively heat only the center of the reaction tube 10, or selectively heat only the upper part of the reaction tube 10.

[0043] The pressure increasing unit 80 returns the reduced pressure inside the housing 50 to atmospheric pressure. The pressure increasing unit 80 includes a pipe 81, a gas source 82, a flow rate controller 83, and an on-off valve 84.

[0044] The pipe 81 is connected to a port 53b provided on the side part 53 of the housing 50. The pipe 81 extends through the side part 53 and the device housing 90 to the outside of the device housing 90. A gas source 82, a flow rate controller 83, and an on-off valve 84 are provided on the pipe 81 in this order from the upstream side to the downstream side in the gas flow direction. The gas source 82, the flow rate controller 83, and the on-off valve 84 are provided, for example, outside the device housing 90. The gas source 82, the flow rate controller 83, and the on-off valve 84 may be provided outside the housing 50 and inside the device housing 90.

[0045] The gas source 82 is, for example, a source of inert gas. The inert gas is, for example, nitrogen gas. The inert gas may also be argon gas.

[0046] The flow rate controller 83 controls the flow rate of the gas flowing through the pipe 81. The flow rate controller 83 is, for example, a mass flow controller.

[0047] The on-off valve 84 is a valve that switches the flow of gas on and off.

[0048] When the on-off valve 84 is opened, the flow rate of the gas from the gas source 82 is controlled by the flow rate controller 83, and the gas with the controlled flow rate is supplied to the inside of the housing 50. As a result, the pressure inside the housing 50, which has been reduced, returns to atmospheric pressure.

[0049] The device housing 90 surrounds the housing 50. The device housing 90 covers the entire housing 50. The device housing 90 supports the bottom 51 of the housing 50.

[0050] As described above, in the substrate processing apparatus 1 according to this embodiment, the gas introduction ducts 211-218 are attached to the outer wall of the reaction tube 10 and extend above the upper surface of the reaction tube 10 to penetrate the housing 50. This improves the efficiency of gas supply between the substrates W while suppressing unnecessary thermal decomposition of the gas. Furthermore, since gas can be supplied from multiple positions (multiple directions) in the circumferential direction of the reaction tube 10, the in-plane shape of the film formation or etching can be easily adjusted.

[0051] (exhaust duct) An example of exhaust duct 40 will be described with reference to Fig. 6. Fig. 6 is a diagram showing an example of exhaust duct 40. The left diagram in Fig. 6 shows a cross section taken along line VI-VI in Fig. 4, and the right diagram in Fig. 6 shows substrate holder 11.

[0052] The exhaust duct 40 has a plurality of divided flow paths 411 to 425. The plurality of divided flow paths 411 to 425 are provided at intervals along the vertical direction.

[0053] The divided flow path 411 is provided in a height region above the top plate 11a of the substrate holder 11. The divided flow path 411 mainly exhausts gas that flows along the upper surface of the top plate 11a. The divided flow paths 412 to 425 are provided in a height region below the top plate 11a of the substrate holder 11 and above the bottom plate 11b of the substrate holder 11 (hereinafter referred to as the "substrate holding region"). The divided flow paths 412 to 425 mainly exhaust gas that flows along the surface of the substrate W held by the substrate holder 11.

[0054] The divided flow paths 413 to 423 have, for example, the same flow path cross-sectional area, which makes it easier to improve the uniformity of the exhaust amount in the vertical direction in the substrate holding area.

[0055] The cross-sectional area of ​​the divided flow path 411 is smaller than that of each of the divided flow paths 413 to 423, for example. In this case, the amount of gas flowing along the upper surface of the top plate 11a can be reduced, and the amount of gas flowing into the substrate holding region can be increased. Therefore, the gas introduced into the reaction tube 10 from the gas inlet 20 can be used efficiently. The cross-sectional area of ​​the divided flow path 412 may be larger than that of each of the divided flow paths 413 to 423. The cross-sectional areas of the divided flow paths 424 and 425 may be smaller than that of each of the divided flow paths 413 to 423.

[0056] The embodiments disclosed herein should be considered to be illustrative in all respects and not restrictive, and the above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims. [Explanation of symbols]

[0057] 1. Substrate processing equipment 10 Reaction tube 20 Gas inlet 30 Vacuum piping 40 Exhaust duct 50 cabinets 211~218 Gas introduction duct

Claims

1. A reaction tube; a gas inlet for introducing a gas into the reaction tube; a gas exhaust unit that exhausts gas introduced into the reaction tube; a housing that accommodates the reaction tube, the gas inlet, and the gas exhaust unit; Equipped with the gas inlet part has a gas inlet duct attached to an outer wall of the reaction tube, the gas introduction duct extends above an upper surface of the reaction tube and penetrates the housing. Substrate processing equipment.

2. the gas introduction duct is provided in plurality along the circumferential direction of the reaction tube; The substrate processing apparatus according to claim 1 .

3. the plurality of gas introduction ducts are provided spaced apart from each other in the circumferential direction of the reaction tube. The substrate processing apparatus according to claim 2 .

4. the gas introduction part has a nozzle that is detachably inserted into the gas introduction duct, the nozzle introduces a gas into the reaction tube; The substrate processing apparatus according to claim 1 .

5. an inner surface of the gas introduction duct has a shape that follows the outer surface of the nozzle; A gap is provided between the inner surface of the gas introduction duct and the outer surface of the nozzle. The substrate processing apparatus according to claim 4 .

6. an apparatus housing surrounding the housing; The gas introduction part is a gas introduction pipe connected to the gas introduction duct; an on-off valve provided in the gas introduction pipe; and The on-off valve is attached to the device housing. The substrate processing apparatus according to claim 5 .

Images