Semiconductor device

Abstract

To provide a semiconductor device which can prevent a sealing resin from being peeled from a passivation film.SOLUTION: Semiconductor devices (100, 200 and 300) include a semiconductor element (20) having a passivation film (23) on a surface (20a), a resin projection (30) arranged on the passivation film, and a sealing resin (40) coating the semiconductor element and the resin projection.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present disclosure relates to semiconductor devices. [Background technology]

[0002] For example, Japanese Patent Application Laid-Open No. 2023-85909 (Patent Document 1) describes a semiconductor device. The semiconductor device described in Patent Document 1 has a substrate, a semiconductor element, and a sealing resin. The semiconductor element has a front surface and a back surface, and is disposed on the substrate so that the back surface faces the substrate. The semiconductor element has a light receiving portion. The sealing resin is disposed on the substrate so as to cover the semiconductor element. The sealing resin is a transparent resin. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2023-85909 A [Summary] A semiconductor element usually has a passivation film on its surface. Therefore, the passivation film and the encapsulating resin come into contact with each other on the surface of the semiconductor element. However, the adhesion strength at the interface between the passivation film and the encapsulating resin is insufficient, and the encapsulating resin may peel off from the surface of the semiconductor element as the encapsulating resin absorbs moisture or deforms.

[0004] The semiconductor device of the present disclosure includes a semiconductor element having a passivation film on its surface, a resin protrusion disposed on the passivation film, and a sealing resin that covers the semiconductor element and the resin protrusion. [Brief explanation of the drawings]

[0005] [Figure 1] FIG. 1 is a plan view of a semiconductor device 100. [Figure 2] FIG. 2 is a cross-sectional view of the semiconductor device 100 taken along line II-II in FIG. [Figure 3] 1 is a manufacturing process diagram of the semiconductor device 100. FIG. [Figure 4] FIG. 10 is a cross-sectional view illustrating a resin protrusion forming step S2. [Figure 5] FIG. 10 is a cross-sectional view illustrating a semiconductor element mounting step S3. [Figure 6] FIG. 2 is a plan view of the semiconductor device 200. [Figure 7] FIG. 7 is a cross-sectional view of the semiconductor device 200 taken along line VII-VII in FIG. [Figure 8] FIG. 2 is a plan view of the semiconductor device 300. [Figure 9] 9 is a cross-sectional view of the semiconductor device 300 taken along line IX-IX in FIG. 6.

[0006] [Detailed explanation] The details of the embodiments of the present disclosure will be described with reference to the drawings. In the following drawings, the same or corresponding parts are designated by the same reference numerals, and redundant descriptions will not be repeated.

[0007] (First embodiment) The semiconductor device according to the first embodiment will be described below. The semiconductor device according to the first embodiment is designated as semiconductor device 100.

[0008] <Configuration of semiconductor device 100> The configuration of the semiconductor device 100 will be described below.

[0009] Fig. 1 is a plan view of a semiconductor device 100. In Fig. 1, the resin of the sealing resin 40 is omitted. Fig. 2 is a cross-sectional view of the semiconductor device 100 taken along line II-II in Fig. 1. As shown in Figs. 1 and 2, the semiconductor device 100 has a substrate 10, a semiconductor element 20, a resin protrusion 30, and the sealing resin 40.

[0010] The substrate 10 includes, for example, a base material 11, a conductive pattern 12, and a conductive pattern 13.

[0011] The substrate 11 has a main surface 11a and a main surface 11b. The main surface 11b is the surface opposite to the main surface 11a. The main surfaces 11a and 11b are end surfaces of the substrate 11 in the thickness direction. The constituent material of the substrate 11 is an electrically insulating material. A specific example of the constituent material of the substrate 11 is glass epoxy. However, the constituent material of the substrate 11 is not limited to this.

[0012] The conductor pattern 12 is disposed on the main surface 11a. The conductor constituting the conductor pattern 12 is, for example, copper or a copper alloy. The conductor pattern 12 has pads 12a. The conductor pattern 13 is disposed on the main surface 11b. The conductor constituting the conductor pattern 13 is, for example, copper or a copper alloy. Although not shown, the conductor pattern 13 is electrically connected to the conductor pattern 12 by, for example, a conductor layer disposed on the inner wall surface of a through hole formed in the substrate 11. The conductor pattern 13 has terminals 13a for connection to the outside of the semiconductor device 100.

[0013] The semiconductor element 20 is, for example, an LSI (Large Scale Integrated Circuit) having an optical sensor. However, the semiconductor element 20 is not limited to this. The semiconductor element 20 may be a light-emitting element such as an LED (Light Emitting Diode) or a laser diode. The semiconductor element 20 may be an element that does not have a light-emitting portion or a light-receiving portion. The semiconductor element 20 has a main surface 20a and a main surface 20b. The main surface 20b is the surface opposite to the main surface 20a. The main surface 20a and the main surface 20b are end surfaces in the thickness direction of the semiconductor element 20. The semiconductor element 20 is disposed on the substrate 10 so that the main surface 20b faces the main surface 11a.

[0014] The semiconductor element 20 has a semiconductor substrate 21, a wiring layer 22, and a passivation film 23. The semiconductor substrate 21 is made of, for example, single-crystal silicon. The semiconductor substrate 21 has a main surface 21a and a main surface 21b. The main surface 21b is the surface opposite to the main surface 21a and forms the main surface 20b. The main surface 21a and the main surface 21b are end surfaces in the thickness direction of the semiconductor substrate 21. A light-receiving portion 21c is formed on the main surface 21a. The light-receiving portion 21c is, for example, a photodiode.

[0015] Although not shown, in addition to the light receiving portion 21c, a source region, a drain region, and a well region are formed on the main surface 21a. The semiconductor element 20 also has a gate insulating film disposed on the main surface 21a between the source region and the drain region, and a gate electrode disposed on the gate insulating film, and the source region, drain region, well region, gate insulating film, and gate electrode form a transistor. The semiconductor element 20 also has a circuit configured with such transistors, such as a readout circuit for the light receiving portion 21c.

[0016] The wiring layer 22 is disposed on the main surface 21a. The wiring layer 22 has a plurality of interlayer insulating films and a plurality of wirings. The plurality of interlayer insulating films are stacked on the main surface 21a. One wiring is disposed on one interlayer insulating film and is covered by another interlayer insulating film. However, the wiring on the top layer is not covered by an interlayer insulating film. Two adjacent wirings in the thickness direction of the wiring layer 22, with an interlayer insulating film therebetween, are electrically connected by a via plug embedded in the interlayer insulating film. The wiring on the bottom layer is electrically connected to the transistor via a contact plug embedded in the interlayer insulating film on the bottom layer. The interlayer insulating film is made of, for example, silicon oxide, and the wiring is made of, for example, copper or a copper alloy. The via plug and the contact plug are made of, for example, tungsten.

[0017] The passivation film 23 is disposed on the wiring layer 22. That is, the passivation film 23 is on the surface (main surface 20a) of the semiconductor element 20. Although not shown, an opening is formed in the passivation film 23, and a pad of the wiring on the top layer is exposed from the opening. Although not shown, this pad is electrically connected to the conductor pattern 12 (pad 12a) by, for example, wire bonding. The constituent material of the passivation film 23 is, for example, silicon nitride, silicon oxide, etc.

[0018] The semiconductor element 20 may further include an optical filter 24. The optical filter 24 is made of, for example, an inorganic material. The optical filter 24 is disposed on the passivation film 23 so as to overlap with the light receiving portion 21c in a plan view (when viewed along the normal direction of the main surface 20a).

[0019] The resin protrusions 30 are disposed on the passivation film 23. For example, the resin protrusions 30 are disposed on a portion of the passivation film 23 that is located outside the optical filter 24 in a planar view. From another perspective, the resin protrusions 30 are disposed directly above the passivation film 23 and are not disposed on the optical filter 24. There may be, for example, a plurality of resin protrusions 30. The plurality of resin protrusions 30 extend linearly in a planar view and are arranged at intervals in a direction perpendicular to the extension direction. However, the arrangement of the resin protrusions 30 is not limited to this. For example, the plurality of resin protrusions 30 may be arranged in a dot pattern in a planar view.

[0020] The width of the resin protrusion 30 is defined as width W. It is preferable that width W becomes smaller as it approaches the passivation film 23. From another perspective, it is preferable that the resin protrusion 30 has an inverse tapered shape. The resin protrusion 30 is formed of, for example, photoresist. The inverse tapered shape of the resin protrusion 30 can be formed by selecting the type of photoresist. However, the constituent material of the resin protrusion 30 is not limited to this.

[0021] The sealing resin 40 is disposed on the substrate 10 so as to cover the semiconductor element 20 and the resin protrusion 30. The sealing resin 40 is made of, for example, a transparent resin. The transparent resin is a resin material that transmits light that can be received by the light-receiving portion 21c. The sealing resin 40 is preferably composed solely of a resin material. From another perspective, the sealing resin 40 preferably does not contain a filler, particularly a carbon filler. The adhesion strength between the resin protrusion 30 and the passivation film 23 is preferably higher than the adhesion strength between the sealing resin 40 and the passivation film 23. This adhesion strength is measured, for example, by forming a layer made of the material of the resin protrusion 30 or the material of the sealing resin 40 on a test piece made of the material of the passivation film 23, and then peeling the layer from the test piece.

[0022] <Method of Manufacturing the Semiconductor Device 100> A method for manufacturing the semiconductor device 100 will be described below.

[0023] 3 is a manufacturing process diagram of the semiconductor device 100. As shown in FIG. 3, the manufacturing method of the semiconductor device 100 includes a preparation step S1, a resin protrusion forming step S2, a semiconductor element mounting step S3, and a resin sealing step S4. The resin protrusion forming step S2 is performed after the preparation step S1. The semiconductor element mounting step S3 is performed after the resin protrusion forming step S2. The resin sealing step S4 is performed after the semiconductor element mounting step S3.

[0024] In the preparation step S1, the semiconductor element 20 is prepared. The semiconductor element 20 is formed according to a conventionally known method. In the semiconductor element 20 prepared in the preparation step S1, the resin protrusions 30 are not formed on the passivation film 23.

[0025] 4 is a cross-sectional view illustrating the resin protrusion forming step S2. As shown in FIG. 4, in the resin protrusion forming step S2, the resin protrusion 30 is formed on the passivation film 23. In the resin protrusion forming step S2, first, photoresist is applied onto the passivation film 23. Second, the applied photoresist is exposed to light and developed. As a result, the resin protrusion 30 is formed on the passivation film 23.

[0026] 5 is a cross-sectional view illustrating the semiconductor element mounting step S3. In the semiconductor element mounting step S3, as shown in FIG. 5, the semiconductor element 20 is mounted on the substrate 10. The semiconductor element 20 is mounted on the substrate 10 using, for example, an adhesive. At this time, wire bonding is also performed to connect the pads of the semiconductor element 20 to the pads 12a.

[0027] In the resin sealing process S4, sealing resin 40 is formed on the substrate 10, thereby sealing the semiconductor element 20 and the resin protrusions 30 with the sealing resin 40. The sealing resin 40 is formed by, for example, a transfer molding method. The method for forming the sealing resin 40 is not limited to this, and the semiconductor element 20 and the resin protrusions 30 may be sealed by, for example, potting the sealing resin 40. In this way, the structure of the semiconductor device 100 shown in FIGS. 1 and 2 is formed.

[0028] <Effects of the semiconductor device 100> The effects of the semiconductor device 100 will be described below.

[0029] Generally, when a semiconductor element has a light-receiving portion or is a light-emitting element such as an LED or laser diode, a transparent resin, particularly a resin material that does not contain carbon filler, must be used as the encapsulating resin. When such a resin material is used as the encapsulating resin, the encapsulating resin becomes highly hygroscopic and prone to deformation. Furthermore, a passivation film is formed on the surface of the semiconductor element, but the adhesion strength between the passivation film, which is made of an inorganic material, and the encapsulating resin tends to be lower than the adhesion strength at the interface where the resin materials contact each other. Therefore, there is a risk that the encapsulating resin will peel off from the passivation film.

[0030] In the semiconductor device 100, the semiconductor element 20 may have a light-receiving portion 21c or may be a light-emitting element, and therefore the sealing resin 40 may be formed of a transparent resin or a resin that does not contain carbon filler. However, in the semiconductor device 100, the resin protrusion 30 is formed on the passivation film 23. Since both the resin protrusion 30 and the sealing resin 40 are made of a resin material, the adhesion between the resin protrusion 30 and the sealing resin 40 is higher than the adhesion between the sealing resin 40 and the passivation film 23. Therefore, in the semiconductor device 100, the resin protrusion 30 is formed on the passivation film 23, making the sealing resin 40 less likely to peel off from the passivation film 23.

[0031] In particular, when the material constituting the resin protrusion 30 is photoresist, it is easier to ensure adhesive strength with the passivation film 23 compared to the sealing resin 40, to which it is difficult to add other materials in order to ensure transparency. Furthermore, when the material constituting the resin protrusion 30 is photoresist, the resin protrusion 30 can be formed in an inverted tapered shape by appropriately selecting the material. Furthermore, when the resin protrusion 30 is in an inverted tapered shape, the sealing resin 40 has an anchor effect (the effect of making it difficult for the sealing resin 40 to come off the resin protrusion 30), which makes it easier to prevent peeling of the sealing resin 40.

[0032] (Second embodiment) A semiconductor device according to the second embodiment will be described. The semiconductor device according to the second embodiment is designated as semiconductor device 200. Here, differences from semiconductor device 100 will be mainly described, and overlapping descriptions will not be repeated.

[0033] <Configuration of the semiconductor device 200> The configuration of the semiconductor device 200 will be described below.

[0034] Fig. 6 is a plan view of the semiconductor device 200. Fig. 7 is a cross-sectional view of the semiconductor device 200 taken along line VII-VII in Fig. 6. As shown in Figs. 6 and 7, the semiconductor device 200 includes a substrate 10, a semiconductor element 20, a resin protrusion 30, and a sealing resin 40. In this respect, the configuration of the semiconductor device 200 is common to the configuration of the semiconductor device 100.

[0035] In the semiconductor device 200, the resin protrusion 30 is disposed on the optical filter 24 (on the passivation film 23 with the optical filter 24 interposed therebetween). More specifically, in the semiconductor device 200, the optical filter 24 has a portion that is located outside the light receiving portion 21c in a planar view. Also, in the semiconductor device 200, the resin protrusion 30 is disposed on a portion of the optical filter 24 that is located outside the light receiving portion 21c in a planar view. In these respects, the configuration of the semiconductor device 200 differs from the configuration of the semiconductor device 100.

[0036] <Effects of the semiconductor device 200> The effects of the semiconductor device 200 will be described below.

[0037] Because the optical filter 24 is made of an inorganic material, peeling of the sealing resin 40 is a concern not only at the interface with the passivation film 23 but also at the interface with the optical filter 24. In the semiconductor device 200, the resin protrusion 30 is disposed on the optical filter 24, and therefore peeling of the sealing resin 40 at the interface with the optical filter 24 can be suppressed due to the adhesion between the resin protrusion 30 and the sealing resin 40 and the difficulty of the sealing resin 40 coming off the resin protrusion 30.

[0038] (Third embodiment) A semiconductor device according to a third embodiment will be described. The semiconductor device according to the third embodiment is designated as semiconductor device 300. Here, differences from semiconductor device 100 will be mainly described, and overlapping descriptions will not be repeated.

[0039] <Configuration of Semiconductor Device 300> The configuration of the semiconductor device 300 will be described below.

[0040] Fig. 8 is a plan view of the semiconductor device 300. Fig. 9 is a cross-sectional view of the semiconductor device 300 taken along line IX-IX in Fig. 6. As shown in Figs. 6 and 7, the semiconductor device 300 includes a substrate 10, a semiconductor element 20, a resin protrusion 30, and a sealing resin 40. In this respect, the configuration of the semiconductor device 300 is common to the configuration of the semiconductor device 100.

[0041] In the semiconductor device 300, the resin protrusion 30 is disposed straddling the optical filter 24 and the passivation film 23. In the semiconductor device 300, for example, the resin protrusion 30 is disposed straddling the outer periphery of the optical filter 24 and the portion of the passivation film 23 surrounding the optical filter 24 in a plan view. Note that in the semiconductor device 300, the resin protrusion 30 may be formed in a ring shape along the outer periphery of the optical filter 24 in a plan view. In these respects, the configuration of the semiconductor device 300 differs from the configuration of the semiconductor device 100.

[0042] <Effects of the semiconductor device 300> The effects of the semiconductor device 300 will be described below.

[0043] As described above, because the optical filter 24 is made of an inorganic material, peeling of the sealing resin 40 is a concern not only at the interface with the passivation film 23, but also at the interface with the optical filter 24. In the semiconductor device 300, the resin protrusion 30 is disposed across the optical filter 24 and the passivation film 23, and therefore, due to the adhesion between the resin protrusion 30 and the sealing resin 40 and the difficulty of the sealing resin 40 coming off the resin protrusion 30, peeling of the sealing resin 40 at the interface with the optical filter 24 and the interface with the passivation film 23 can be suppressed.

[0044] (Addendum) Each of the above embodiments includes the following configurations.

[0045] <Appendix 1> a semiconductor element having a passivation film on its surface; a resin protrusion disposed on the passivation film; A semiconductor device comprising: a sealing resin that covers the semiconductor element and the resin protrusion.

[0046] <Appendix 2> 2. The semiconductor device according to claim 1, wherein the resin protrusion is formed of photoresist.

[0047] <Appendix 3> 3. The semiconductor device according to claim 2, wherein the width of the resin protrusion decreases as it approaches the passivation film.

[0048] <Appendix 4> 3. The semiconductor device according to claim 2, wherein the adhesive strength between the resin protrusion and the passivation film is greater than the adhesive strength between the sealing resin and the passivation film.

[0049] <Appendix 5> further comprising an optical filter; the semiconductor element has a light receiving portion, 2. The semiconductor device according to claim 1, wherein the optical filter is arranged on the passivation film so as to overlap the light receiving portion in a planar view.

[0050] <Appendix 6> 6. The semiconductor device according to claim 5, wherein the optical filter is made of an inorganic material.

[0051] <Appendix 7> 6. The semiconductor device according to claim 5, wherein the resin protrusion is disposed on a portion of the passivation film that is outside the optical filter in a plan view.

[0052] <Appendix 8> the optical filter has a portion located outside the light receiving portion in a plan view, 6. The semiconductor device according to claim 5, wherein the resin protrusion is arranged on a portion of the optical filter that is located outside the light receiving portion in a plan view.

[0053] <Appendix 9> 6. The semiconductor device according to claim 5, wherein the resin protrusion is arranged across the outer peripheral edge of the optical filter in a planar view and the portion of the passivation film surrounding the optical filter in a planar view.

[0054] <Appendix 10> 10. The semiconductor device according to claim 1, wherein the sealing resin is a transparent resin.

[0055] <Appendix 11> 11. The semiconductor device according to claim 10, wherein the sealing resin is made of only a resin material.

[0056] Although the embodiments of the present disclosure have been described above, the above-described embodiments can be modified in various ways. Furthermore, the scope of the present invention is not limited to the above-described embodiments. The scope of the present invention is defined by the claims, and is intended to include all modifications within the meaning and scope of the claims. [Explanation of symbols]

[0057] 10 substrate, 11 base material, 11a main surface, 11b main surface, 12 conductor pattern, 12a pad, 13 conductor pattern, 13a terminal, 20 semiconductor element, 20a, 20b main surfaces, 21 semiconductor substrate, 21a, 21b main surfaces, 21c light receiving portion, 22 wiring layer, 23 passivation film, 24 optical filter, 30 resin protrusion, 40 sealing resin, 100, 200, 300 semiconductor device, S1 preparation process, S2 resin protrusion formation process, S3 semiconductor element mounting process, S4 resin sealing process, W width.

Claims

1. a semiconductor element having a passivation film on its surface; a resin protrusion disposed on the passivation film; A semiconductor device comprising: a sealing resin that covers the semiconductor element and the resin protrusion.

2. 2. The semiconductor device according to claim 1, wherein said resin protrusion is formed of photoresist.

3. 3. The semiconductor device according to claim 2, wherein the width of said resin protrusion decreases as it approaches said passivation film.

4. 3. The semiconductor device according to claim 2, wherein the adhesive strength between said resin protrusion and said passivation film is greater than the adhesive strength between said sealing resin and said passivation film.

5. further comprising an optical filter; the semiconductor element has a light receiving portion, The semiconductor device according to claim 1 , wherein the optical filter is disposed on the passivation film so as to overlap the light receiving portion in a plan view.

6. 6. The semiconductor device according to claim 5, wherein said optical filter is made of an inorganic material.

7. The semiconductor device according to claim 5 , wherein the resin protrusion is disposed on a portion of the passivation film that is located outside the optical filter in a plan view.

8. the optical filter has a portion located outside the light receiving portion in a plan view, The semiconductor device according to claim 5 , wherein the resin protrusion is disposed on a portion of the optical filter that is located outside the light receiving portion in a plan view.

9. 6. The semiconductor device according to claim 5, wherein the resin protrusion is disposed across an outer peripheral edge of the optical filter in a plan view and a portion of the passivation film surrounding the optical filter in a plan view.

10. The semiconductor device according to claim 1 , wherein the sealing resin is a transparent resin.

11. The semiconductor device according to claim 10 , wherein the sealing resin is made of only a resin material.

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