Image sensor

The image sensor design addresses photodiode degradation by separating and blocking electron transfer between photodiodes, enhancing performance and reducing noise through physical separation and switching mechanisms.

JP2025129053APending Publication Date: 2025-09-03SAMSUNG ELECTRONICS CO LTD
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Patent Information

Application Number
JP2025025701
Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
Priority Date
2024-02-22
Filing Date
2025-02-20
Publication Date
2025-09-03

AI Technical Summary

Technical Problem

Existing image sensors with split photodiodes suffer from photodiode deterioration due to electron saturation, where the first-saturating photodiode affects adjacent photodiodes, leading to degradation.

Method used

The image sensor design includes physically separated regions with a switch that blocks electron transfer between photodiodes, using impurity regions and deep trench isolation to prevent electron movement from saturated photodiodes to adjacent ones.

Benefits of technology

Prevents degradation of adjacent photodiodes by blocking electron transfer, reducing noise and maintaining photodiode performance across varying light conditions.

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Abstract

To provide an image sensor including a pixel to prevent the deterioration of an adjacent photodiode due to saturation of a photodiode.SOLUTION: At least one pixel of an image sensor including a plurality of pixels includes a first region including a first photodiode, a second region including a second photodiode that is smaller than the first photodiode, and a third region that sections between the first region and the second region physically. The third region is configured to include a switch that blocks the transfer of electrons, which are emitted from a first floating diffusion node of the first region, to a second floating diffusion node of the second region.SELECTED DRAWING: Figure 2
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Citation Information

Patent Citations

  • Image sensor and electronic device including the same

    JP2024012182A