Semiconductor device

Abstract

To provide a semiconductor device capable of connecting a wider variety of connection members while reducing the size of a first switching element.SOLUTION: A semiconductor device A1 includes a first switching element 21 disposed on a z1 side in a thickness direction z and including a first electrode 212 where main current flows, and a first main connection member 51 and a first sub-connection member 61 connected to the first electrode 212. The first main connection member 51 mainly contains a first main metal. The first sub-connection member 61 mainly contains a first sub-metal. The first main metal and the first sub-metal are different from each other.SELECTED DRAWING: Figure 14

Description

[Technical Field]

[0001] The present disclosure relates to semiconductor devices. [Background technology]

[0002] Semiconductor devices including semiconductor elements such as switching elements are widely known. Patent Document 1 discloses an example of a conventional semiconductor device. The semiconductor device disclosed in this document includes a plurality of first switching elements, a plurality of second switching elements, a first power supply terminal, and a second power supply terminal. The second power supply terminal has a first strip-shaped portion, a plurality of second strip-shaped portions, and an external connection portion. The plurality of second strip-shaped portions and the plurality of second switching elements are individually connected by a plurality of second conductive wires. Furthermore, a plurality of first conductive wires are individually connected to the plurality of first switching elements. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Re-tabled publication 2019 / 098368 Summary of the Invention [Problem to be solved by the invention]

[0004] In addition to the wires for passing the current to be switched, wires for performing various functions may be connected to the first switching element or the second switching element. If new electrodes were provided to connect these wires and other connecting members, it would hinder the miniaturization of the first switching element and the second switching element.

[0005] The present disclosure has been made in light of the above circumstances, and an object of the present disclosure is to provide a semiconductor device that allows a greater variety of connecting members to be connected while miniaturizing the first switching element. [Means for solving the problem]

[0006] The semiconductor device provided by the present disclosure comprises a first switching element arranged on a first side in the thickness direction and having a first electrode through which a main current flows, and a first main connection member and a first sub-connection member connected to the first electrode, wherein the first main connection member has a first main metal as its main component, and the first sub-connection member has a first sub-metal as its main component, and the first main metal and the first sub-metal are different from each other. [Effects of the Invention]

[0007] According to the present disclosure, it is possible to provide a semiconductor device that allows the first switching element to be miniaturized while allowing a wider variety of connecting members to be connected.

[0008] Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings. [Brief explanation of the drawings]

[0009] [Figure 1] FIG. 1 is a plan view showing a semiconductor device according to a first embodiment of the present disclosure. [Figure 2] FIG. 2 is a bottom view showing the semiconductor device according to the first embodiment of the present disclosure. [Figure 3] FIG. 3 is a side view showing the semiconductor device according to the first embodiment of the present disclosure. [Figure 4] FIG. 4 is a cross-sectional view taken along line IV-IV in FIG. [Figure 5] FIG. 5 is a cross-sectional view taken along line VV in FIG. [Figure 6] FIG. 6 is a cross-sectional view taken along line VI-VI in FIG. [Figure 7] FIG. 7 is a cross-sectional view taken along line VII-VII in FIG. [Figure 8] FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. [Figure 9] FIG. 9 is a cross-sectional view taken along line IX-IX in FIG. [Figure 10] FIG. 10 is a cross-sectional view taken along line XX in FIG. [Figure 11] FIG. 11 is a cross-sectional view taken along line XI-XI in FIG. [Figure 12] FIG. 12 is a plan view of a main part showing the semiconductor device according to the first embodiment of the present disclosure. [Figure 13] FIG. 13 is a plan view of a main part showing the semiconductor device according to the first embodiment of the present disclosure. [Figure 14] FIG. 14 is an enlarged plan view of a main part showing the semiconductor device according to the first embodiment of the present disclosure. [Figure 15] FIG. 15 is an enlarged plan view of a main part showing the semiconductor device according to the first embodiment of the present disclosure. [Figure 16] FIG. 16 is a plan view showing a semiconductor device according to the second embodiment of the present disclosure. [Figure 17] FIG. 17 is a plan view of a main part showing a semiconductor device according to a second embodiment of the present disclosure. [Figure 18] FIG. 18 is a plan view of a main part showing a semiconductor device according to a second embodiment of the present disclosure. [Figure 19] FIG. 19 is an enlarged plan view of a main part showing a semiconductor device according to a second embodiment of the present disclosure. [Figure 20] FIG. 20 is an enlarged plan view of a main part showing a semiconductor device according to a second embodiment of the present disclosure. [Figure 21] FIG. 21 is a plan view showing a first modified example of the semiconductor device according to the second embodiment of the present disclosure. [Figure 22] FIG. 22 is a plan view of a main part showing a first modified example of the semiconductor device according to the second embodiment of the present disclosure. [Figure 23] FIG. 23 is a plan view of a main part showing a first modified example of the semiconductor device according to the second embodiment of the present disclosure. [Figure 24] FIG. 24 is an enlarged plan view of a main part showing a first modified example of the semiconductor device according to the second embodiment of the present disclosure. [Figure 25] FIG. 25 is an enlarged plan view of a main part showing a first modified example of the semiconductor device according to the second embodiment of the present disclosure. [Figure 26] FIG. 26 is a plan view showing a semiconductor device according to a third embodiment of the present disclosure. [Figure 27] FIG. 27 is a plan view of a main part showing a semiconductor device according to a third embodiment of the present disclosure. [Figure 28] FIG. 28 is a plan view of a main part showing a semiconductor device according to a third embodiment of the present disclosure. [Figure 29] FIG. 29 is an enlarged plan view of a main part showing a semiconductor device according to a third embodiment of the present disclosure. [Figure 30] FIG. 30 is an enlarged plan view of a main part showing a semiconductor device according to a third embodiment of the present disclosure. [Figure 31] FIG. 31 is an enlarged plan view of a main part showing a first modified example of the semiconductor device according to the third embodiment of the present disclosure. [Figure 32] FIG. 32 is an enlarged plan view of a main part showing a first modified example of the semiconductor device according to the third embodiment of the present disclosure. [Figure 33] FIG. 33 is an enlarged plan view of a main part showing a second modified example of the semiconductor device according to the third embodiment of the present disclosure. [Figure 34] FIG. 34 is an enlarged plan view of a main part showing a second modified example of the semiconductor device according to the third embodiment of the present disclosure. [Figure 35] FIG. 35 is an enlarged plan view of a main part showing a third modified example of the semiconductor device according to the third embodiment of the present disclosure. [Figure 36] FIG. 36 is an enlarged plan view of a main part showing a third modified example of the semiconductor device according to the third embodiment of the present disclosure. [Figure 37] FIG. 37 is an enlarged plan view of a main part showing a semiconductor device according to a fourth embodiment of the present disclosure. [Figure 38] FIG. 38 is an enlarged plan view of a main part showing a semiconductor device according to a fourth embodiment of the present disclosure. [Figure 39] FIG. 39 is an enlarged plan view of a main part showing a first modified example of the semiconductor device according to the fourth embodiment of the present disclosure. [Figure 40] FIG. 40 is an enlarged plan view of a main part showing a first modified example of the semiconductor device according to the fourth embodiment of the present disclosure. [Figure 41] FIG. 41 is an enlarged plan view of a main part showing a semiconductor device according to a fifth embodiment of the present disclosure. [Figure 42] FIG. 42 is an enlarged plan view of a main part showing a semiconductor device according to a fifth embodiment of the present disclosure. [Figure 43] FIG. 43 is an enlarged plan view of a main part showing a semiconductor device according to a sixth embodiment of the present disclosure. [Figure 44] FIG. 44 is an enlarged plan view of a main part showing a semiconductor device according to a sixth embodiment of the present disclosure. [Figure 45] FIG. 45 is an enlarged plan view of a main part showing a first modified example of the semiconductor device according to the sixth embodiment of the present disclosure. [Figure 46] FIG. 46 is an enlarged plan view of a main part showing a first modified example of the semiconductor device according to the sixth embodiment of the present disclosure. [Figure 47] FIG. 47 is a plan view showing a semiconductor device according to the seventh embodiment of the present disclosure. [Figure 48] FIG. 48 is a plan view of a main part showing a semiconductor device according to a seventh embodiment of the present disclosure. [Figure 49] FIG. 49 is a plan view of a main part showing a semiconductor device according to a seventh embodiment of the present disclosure. [Figure 50] FIG. 50 is an enlarged plan view of a main part showing a semiconductor device according to a seventh embodiment of the present disclosure. [Figure 51] FIG. 51 is an enlarged plan view of a main part showing a semiconductor device according to a seventh embodiment of the present disclosure. [Figure 52] FIG. 52 is an enlarged perspective view of a main part of a semiconductor device according to a seventh embodiment of the present disclosure. [Figure 53] FIG. 53 is a plan view showing a first modified example of the semiconductor device according to the seventh embodiment of the present disclosure. [Figure 54] FIG. 54 is a plan view of a main part showing a first modified example of the semiconductor device according to the seventh embodiment of the present disclosure. [Figure 55] FIG. 55 is a plan view of a main part showing a first modified example of the semiconductor device according to the seventh embodiment of the present disclosure. [Figure 56] FIG. 56 is an enlarged plan view of a main part showing a first modified example of the semiconductor device according to the seventh embodiment of the present disclosure. [Figure 57]FIG. 57 is an enlarged plan view of a main part showing a first modified example of the semiconductor device according to the seventh embodiment of the present disclosure. [Figure 58] FIG. 58 is an enlarged perspective view of a main part showing a first modified example of the semiconductor device according to the seventh embodiment of the present disclosure. [Figure 59] FIG. 59 is a plan view of a main part showing a semiconductor device according to the eighth embodiment of the present disclosure. [Figure 60] FIG. 60 is a plan view of a main part showing a semiconductor device according to the eighth embodiment of the present disclosure. DETAILED DESCRIPTION OF THE INVENTION

[0010] Preferred embodiments of the present disclosure will now be described in detail with reference to the drawings.

[0011] The terms "first," "second," "third," etc. in this disclosure are used for identification purposes only and are not intended to impose any ranking on their objects.

[0012] In this disclosure, unless otherwise specified, the terms "a certain object A is formed on an object B" and "a certain object A is formed on an object B" include "a certain object A is formed directly on an object B" and "a certain object A is formed on an object B with another object interposed between the objects A and B." Similarly, the terms "a certain object A is disposed on an object B" and "a certain object A is disposed on an object B" include "a certain object A is disposed directly on an object B" and "a certain object A is disposed on an object B with another object interposed between the objects A and B," unless otherwise specified. Similarly, the term "a certain object A is located on an object B" includes "a certain object A is located on an object B in contact with the object B" and "a certain object A is located on an object B with another object interposed between the objects A and B," unless otherwise specified. Furthermore, unless otherwise specified, the phrase "an object A overlaps an object B when viewed in a certain direction" includes "an object A overlaps the entire object B" and "an object A overlaps a part of an object B." Furthermore, in this disclosure, "a surface A faces (one side or the other side of) direction B" is not limited to the case where the angle of surface A with respect to direction B is 90°, but also includes the case where surface A is tilted with respect to direction B.

[0013] 1 to 15 illustrate a semiconductor device according to a first embodiment of the present disclosure. The semiconductor device A1 of this embodiment includes a first conductive layer 1A, a second conductive layer 1B, a support member 10A, a support member 10B, a plurality of first switching elements 21, a plurality of second switching elements 22, a first main conductive member 31, a second main conductive member 32, a third main conductive member 33, a plurality of sub-conductive members 41 to 48, a plurality of first main connecting members 51, a plurality of second main connecting members 52, a plurality of sub-connecting members 61 to 68, and a sealing resin 7. The semiconductor device A1 converts, for example, a DC power supply voltage applied to a first main terminal 311 and a third main terminal 331 (described below) into AC power using the plurality of first switching elements 21 and the plurality of second switching elements 22. The converted AC power is input to a power supply target, such as a motor, through a second main terminal 321 (described below). The semiconductor device A1 constitutes part of a power conversion circuit, such as an inverter. The applications and specific configurations of the semiconductor device according to the present invention are not limited in any way.

[0014] FIG. 1 is a plan view showing the semiconductor device A1. FIG. 2 is a bottom view showing the semiconductor device A1. FIG. 3 is a side view showing the semiconductor device A1. FIG. 4 is a cross-sectional view taken along line IV-IV in FIG. 1. FIG. 5 is a cross-sectional view taken along line VV in FIG. 1. FIG. 6 is a cross-sectional view taken along line VI-VI in FIG. 1. FIG. 7 is a cross-sectional view taken along line VII-VII in FIG. 1. FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. 1. FIG. 9 is a cross-sectional view taken along line IX-IX in FIG. 1. FIG. 10 is a cross-sectional view taken along line XX in FIG. 1. FIG. 11 is a cross-sectional view taken along line XI-XI in FIG. 1. FIG. 12 is a plan view showing a main part of the semiconductor device A1. FIG. 13 is a plan view showing a main part of the semiconductor device A1. FIG. 14 is an enlarged plan view showing a main part of the semiconductor device A1. FIG. 15 is an enlarged plan view showing a main part of the semiconductor device A1.

[0015] In these figures, the thickness direction z corresponds to the thickness direction in the present disclosure. A first side in the thickness direction z is referred to as the z1 side, and a second side opposite the first side in the z direction is referred to as the z2 side. The first direction x corresponds to the first direction in the present disclosure. The first side in the first direction x is referred to as the x1 side, and a second side opposite the x1 side is referred to as the x2 side. The second direction y corresponds to the second direction in the present disclosure. The first side in the second direction y is referred to as the y1 side, and a second side opposite the y1 side is referred to as the y2 side. In FIG. 1, the sealing resin 7 is shown by an imaginary line. Furthermore, in FIGS. 12 to 15, the sealing resin 7 is omitted.

[0016] The first conductive layer 1A is disposed on the x1 side in the first direction x. The first conductive layer 1A has a first main surface 11A. The first main surface 11A faces the z1 side in the thickness direction z. In the illustrated example, the first main surface 11A is a flat surface. The first conductive layer 1A is made of a conductive material, and contains, for example, Cu (copper).

[0017] The first main conductive member 31 includes a first main terminal 311 and a first pillow member 319. As shown in FIGS. 1, 2, and 6, the first main terminal 311 protrudes toward the x1 side in the first direction x and has a portion exposed from the sealing resin 7. The first main terminal 311 is disposed at a position shifted toward the x1 side in the first direction x with respect to the first conductive layer 1A. The first main terminal 311 is also disposed at a position shifted toward the y1 side in the second direction y with respect to the first conductive layer 1A. The first main terminal 311 is disposed on the z1 side in the thickness direction z with respect to the first main surface 11A and is spaced apart from the first conductive layer 1A. The first main terminal 311 overlaps the first main surface 11A when viewed in the thickness direction z. The first main terminal 311 contains Cu (copper). A first mounting hole 3111 is provided in the first main terminal 311. The first mounting hole 3111 penetrates the first main terminal 311 in the thickness direction z.

[0018] 1 and 6, the first pillow material 319 is interposed between the first conductive layer 1A and the first main terminal 311. The composition of the first pillow material 319 includes, for example, Cu (copper). The first pillow material 319 is conductively joined to the first main surface 11A of the first conductive layer 1A and the first main terminal 311. The method of conductive joining is not particularly limited, and a method using a conductive joining material such as solder, a method such as welding, or the like may be appropriately adopted.

[0019] In this embodiment, as shown in FIGS. 1, 2, and 4 to 9, the first conductive layer 1A is supported by a support member 10A. The support member 10A is located on the opposite side of the first conductive layer 1A from the first main surface 11A. The specific configuration of the support member 10A is not limited in any way, and in this embodiment, the support member 10A is made of a DBC (Direct Bonded Copper) substrate. The support member 10A includes an insulating layer 101, a support layer 102, and a heat dissipation layer 103. The support member 10A is covered with a sealing resin 7 except for a portion of the heat dissipation layer 103.

[0020] The insulating layer 101 includes a portion located between the support layer 102 and the heat dissipation layer 103 in the thickness direction z. The insulating layer 101 is made of a material with high thermal conductivity. The insulating layer 101 is made of ceramics containing aluminum nitride (AlN), for example. The thickness of the insulating layer 101 is thinner than the thickness of the first conductive layer 1A.

[0021] The support layer 102 is located between the insulating layer 101 and the first conductive layer 1A in the thickness direction z. The composition of the support layer 102 includes copper (Cu). As viewed in the thickness direction z, the support layer 102 is surrounded by the periphery of the insulating layer 101. The support layer 102 is joined to the first conductive layer 1A via, for example, solder.

[0022] The heat dissipation layer 103 is located on the opposite side of the insulating layer 101 from the support layer 102 in the thickness direction z. A portion of the heat dissipation layer 103 is exposed from the sealing resin 7. When the semiconductor device A1 is in use, for example, a heat sink (not shown) is bonded to the heat dissipation layer 103. The heat dissipation layer 103 contains copper. When viewed in the thickness direction z, the heat dissipation layer 103 is surrounded by the periphery of the insulating layer 101.

[0023] The second conductive layer 1B is disposed on the x2 side of the first conductive layer 1A in the first direction x. The second conductive layer 1B has a second main surface 11B. The second main surface 11B faces the z1 side in the thickness direction z. In the illustrated example, the second main surface 11B is a flat surface. The second conductive layer 1B is made of a conductive material, and contains, for example, Cu (copper).

[0024] The second main conductive member 32 includes a second main terminal 321 and a second pillow member 329. As shown in FIGS. 1 to 6 , the second main terminal 321 protrudes toward the x2 side in the first direction x and has a portion exposed from the sealing resin 7. The second main terminal 321 is disposed at a position shifted toward the x2 side in the first direction x with respect to the second conductive layer 1B. The center position of the second main terminal 321 in the second direction y substantially coincides with the center position of the second conductive layer 1B in the second direction y. The second main terminal 321 is disposed on the z1 side in the thickness direction z with respect to the second main surface 11B and is spaced apart from the second conductive layer 1B. The second main terminal 321 overlaps the second main surface 11B when viewed in the thickness direction z. The second main terminal 321 contains Cu (copper). A second mounting hole 3211 is provided in the second main terminal 321. The second mounting hole 3211 penetrates the second main terminal 321 in the thickness direction z.

[0025] As shown in Fig. 1 and Figs. 4 to 6, the second pillow member 329 is interposed between the second conductive layer 1B and the second main terminal 321. The composition of the second pillow member 329 includes Cu (copper). The second pillow member 329 is conductively joined to the second main surface 11B of the second conductive layer 1B and the second main terminal 321. The method of conductive joining is not particularly limited, and a method using a conductive joining material such as solder, a method such as welding, or the like may be appropriately adopted.

[0026] In this embodiment, as shown in Figures 1, 2, 4 to 6, 10, and 11, second conductive layer 1B is supported by support member 10B. Support member 10B is located on the opposite side of second conductive layer 1B from second main surface 11B. There are no specific limitations on the specific configuration of support member 10A, and in this embodiment, it has the same configuration as support member 10A, so description thereof will be omitted.

[0027] As shown in FIGS. 1 and 4 to 7, the multiple first switching elements 21 are bonded to the first main surface 11A of the first conductive layer 1A. All of the multiple first switching elements 21 are the same element. The multiple first switching elements 21 are, for example, MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors). Alternatively, the multiple first switching elements 21 may be field-effect transistors including MISFETs (Metal-Insulator-Semiconductor Field-Effect Transistors) or bipolar transistors such as IGBTs (Insulated Gate Bipolar Transistors). In the description of the semiconductor device A1, the multiple first switching elements 21 are n-channel MOSFETs with a vertical structure. The multiple first switching elements 21 include a compound semiconductor substrate. The compound semiconductor substrate contains silicon carbide (SiC). The multiple first switching elements 21 are arranged along the second direction y.

[0028] As shown in FIGS. 1, 5, 6, 12 and 14, the first switching element 21 has a second electrode 211, a first electrode 212, a third electrode 213 and a fourth electrode 214.

[0029] The second electrode 211 faces the first main surface 11A of the first conductive layer 1A. A current corresponding to the power before being converted by the first switching elements 21 flows through the second electrode 211. In other words, the second electrode 211 corresponds to the drain electrode of the first switching elements 21. The second electrode 211 is conductively bonded to the first main surface 11A via a conductive bonding layer 29. Therefore, the second electrodes 211 of the multiple first switching elements 21 are electrically connected to the first main conductive member 31. The conductive bonding layer 29 is, for example, solder. Alternatively, the conductive bonding layer 29 may be a sintered metal containing silver or the like.

[0030] The first electrode 212 is located on the z1 side in the thickness direction z, opposite to the second electrode 211. A current corresponding to the power converted by the first switching element 21 flows through the first electrode 212. In other words, the first electrode 212 corresponds to the source electrode of the first switching element 21.

[0031] The third electrode 213 is located on the same side (z1 side) as the first electrode 212 in the thickness direction z. The third electrode 213 is located on the y1 side in the second direction y with respect to the first electrode 212 as viewed in the thickness direction z. A gate voltage for driving the first switching element 21 is applied to the third electrode 213. In other words, the third electrode 213 is a gate electrode of the first switching element 21. As shown in FIG. 14 , the area of ​​the third electrode 213 is smaller than the area of ​​the first electrode 212 as viewed in the thickness direction z.

[0032] The fourth electrode 214 is located on the same side (z1 side) as the first electrode 212 in the thickness direction z. As viewed in the thickness direction z, the fourth electrode 214 is located on the y1 side in the second direction y with respect to the first electrode 212. In the illustrated example, two fourth electrodes 214 are arranged on both sides of the third electrode 213 in the first direction x. The fourth electrode 214 is electrically connected to the first electrode 212 in the first switching element 21 and is a so-called source sense electrode. As shown in FIG. 14, the area of ​​the fourth electrode 214 is smaller than the area of ​​the first electrode 212 as viewed in the thickness direction z. The multiple second switching elements 22 are bonded to the second main surface 11B of the second conductive layer 1B as shown in FIGS. 1, 4 to 6, 13, and 15. The multiple second switching elements 22 are the same elements as the multiple first switching elements 21. Therefore, the multiple second switching elements 22 are n-channel MOSFETs with a vertical structure. Alternatively, the second switching elements 22 may be field-effect transistors such as MISFETs (Metal-Insulator-Semiconductor Field-Effect Transistors) or bipolar transistors such as IGBTs (Insulated Gate Bipolar Transistors). In the description of the semiconductor device A1, the second switching elements 22 are n-channel MOSFETs with a vertical structure. The second switching elements 22 include a compound semiconductor substrate. The compound semiconductor substrate contains silicon carbide (SiC). The second switching elements 22 are arranged along the second direction y.

[0033] The plurality of second switching elements 22 each have a sixth electrode 221 , a fifth electrode 222 , a seventh electrode 223 and an eighth electrode 224 .

[0034] The sixth electrode 221 faces the second main surface 11B of the second conductive layer 1B. A current corresponding to the power before being converted by the second switching element 22 flows through the sixth electrode 221. That is, the sixth electrode 221 corresponds to the drain electrode of the second switching element 22. The sixth electrode 221 is conductively bonded to the second main surface 11B via the conductive bonding layer 29. Therefore, the sixth electrodes 221 of the multiple second switching elements 22 are electrically connected to the second main conductive member 32.

[0035] The fifth electrode 222 is located on one side in the thickness direction z opposite to the sixth electrode 221. A current corresponding to the power converted by the second switching element 22 flows through the fifth electrode 222. In other words, the fifth electrode 222 corresponds to the source electrode of the second switching element 22.

[0036] The seventh electrode 223 is located on the same side (z1 side) as the fifth electrode 222 in the thickness direction z. The seventh electrode 223 is located on the y2 side in the second direction y with respect to the fifth electrode 222 as viewed in the thickness direction z. A gate voltage for driving the second switching element 22 is applied to the seventh electrode 223. That is, the seventh electrode 223 is a gate electrode of the second switching element 22. As shown in FIG. 15 , the area of ​​the seventh electrode 223 is smaller than the area of ​​the fifth electrode 222 as viewed in the thickness direction z.

[0037] The eighth electrode 224 is located on the same side (z1 side) as the fifth electrode 222 in the thickness direction z. The eighth electrode 224 is located on the y2 side in the second direction y with respect to the fifth electrode 222 as viewed in the thickness direction z. In the illustrated example, two eighth electrodes 224 are arranged on both sides of the seventh electrode 223 in the first direction x. The eighth electrode 224 is electrically connected to the fifth electrode 222 in the second switching element 22 and is a so-called source sense electrode. As shown in FIG. 15 , the area of ​​the eighth electrode 224 is smaller than the area of ​​the fifth electrode 222 as viewed in the thickness direction z. 1, 2, 4 to 7, and 12, the third main conductive member 33 includes an extending portion 332 and a third main terminal 331. The third main conductive member 33 is made of a conductive material, and includes, for example, Cu (copper).

[0038] The third main terminal 331 has a portion that protrudes from the sealing resin 7 toward the x1 side in the first direction x. The third main terminal 331 is located on the y2 side in the second direction y with respect to the first main terminal 311. The third main terminal 331 is located at a position shifted toward the x1 side in the first direction x with respect to the second conductive layer 1B. The third main terminal 331 is located on the z1 side in the thickness direction z with respect to the first main surface 11A, and is spaced apart from the first conductive layer 1A. The third main terminal 331 overlaps the first main surface 11A when viewed in the thickness direction z. A third mounting hole 3311 is provided in the third main terminal 331. The third mounting hole 3311 penetrates the third main terminal 331 in the thickness direction z.

[0039] The extending portion 332 extends from the third main terminal 331 to the x2 side in the first direction x, and is covered with the sealing resin 7. The extending portion 332 of this embodiment includes a first portion 3321, a second portion 3322, and a third portion 3323.

[0040] In the illustrated example, as shown in FIGS. 4 and 5, the distance z1 of the first portion 3321 from the first main surface 11A in the thickness direction z is smaller than the distance z0 from the first main surface 11A to the third main terminal 331 in the thickness direction z. The magnitude of the distance z1 is, for example, 0.1 mm or more. As shown in FIGS. 1, 2, and 4 to 7, the first portion 3321 is located between the plurality of first switching elements 21 and the plurality of second switching elements 22 in the first direction x. As shown in FIG. 5, in the illustrated example, the distance z1 is larger than the distance z2 from the first main surface 11A to one end of the first switching element 21 in the thickness direction z. For example, the distance z2 is about 0.5 mm, while the distance z1 is about 0.8 mm to 1.2 mm.

[0041] The shape of the first portion 3321 is not limited in any way, and in this embodiment, it has a shape extending in the second direction y, for example, a flat band shape. In the example shown, the first portion 3321 overlaps the first main surface 11A (first conductive layer 1A) when viewed in the thickness direction z. In addition, in the example shown, the x2-side edge of the first portion 3321 in the first direction x is located closer to the x1-side edge in the first direction x than the x2-side edge of the first main surface 11A in the first direction x.

[0042] The second portion 3322 is connected to the third main terminal 331. The second portion 3322 extends from the third main terminal 331 along the first direction x toward the x2 side in the first direction x. The shape of the second portion 3322 is not particularly limited, and may be, for example, a flat strip shape. The distance from the first main surface 11A to the second portion 3322 in the thickness direction z is the same as the distance z0. The second portion 3322 is located on the y2 side in the second direction y with respect to the multiple first switching elements 21.

[0043] The third portion 3323 is interposed between the first portion 3321 and the second portion 3322. Due to the inclusion of the third portion 3323, the extending portion 332 has a bent shape when viewed in the second direction y. In the illustrated example, the third portion 3323 is part of the x1-side edge of the first portion 3321 in the first direction x, and is connected to a portion closer to the y2-side end in the second direction y.

[0044] The sub-conductive members 41-48 are electrically connected to either the first switching elements 21 or the second switching elements 22. As shown in FIGS. 1-7, 12, and 13, the sub-conductive members 41-48 of this embodiment extend in the second direction y when viewed in the thickness direction z, and are arranged in the first direction x. The sub-conductive members 41-48 are made of a conductive material, such as copper (Cu). In the following description, the sub-conductive members 41-48 are classified as a first sub-conductive member 41, a second sub-conductive member 42, a third sub-conductive member 43, a fourth sub-conductive member 44, a fifth sub-conductive member 45, a sixth sub-conductive member 46, a seventh sub-conductive member 47, and an eighth sub-conductive member 48.

[0045] The first sub-conductive member 41 is electrically connected to the first electrode 212 of the first switching element 21. The first sub-conductive member 41 is disposed on the x1 side of the x2-side edge of the first conductive layer 1A in the first direction x. The first sub-conductive member 41 has a first sub-terminal portion 411 and a first sub-wiring portion 412. The first sub-terminal portion 411 protrudes from the sealing resin 7 and, in the illustrated example, extends to the z1 side in the thickness direction z. The first sub-wiring portion 412 is covered by the sealing resin 7. The shape and size of the first sub-wiring portion 412 are not limited in any way. In the illustrated example, the first sub-wiring portion 412 is located on the y1 side in the second direction y with respect to the first conductive layer 1A and the support member 10A.

[0046] The second sub-conductive member 42 is electrically connected to the first electrode 212 of the first switching element 21. The second sub-conductive member 42 is disposed on the x1 side in the first direction x with respect to the first sub-conductive member 41. The second sub-conductive member 42 has a second sub-terminal portion 421 and a second sub-wiring portion 422. The second sub-terminal portion 421 protrudes from the sealing resin 7 and, in the illustrated example, extends to the z1 side in the thickness direction z. The second sub-wiring portion 422 is covered with the sealing resin 7. The shape and size of the second sub-wiring portion 422 are not limited in any way. In the illustrated example, the second sub-wiring portion 422 is located on the y1 side in the second direction y with respect to the first conductive layer 1A and the support member 10A.

[0047] The third sub-conductive member 43 is electrically connected to the third electrode 213 of the first switching element 21. The third sub-conductive member 43 is disposed between the first sub-conductive member 41 and the second sub-conductive member 42 in the first direction x. The third sub-conductive member 43 has a third sub-terminal portion 431 and a third sub-wiring portion 432. The third sub-terminal portion 431 protrudes from the sealing resin 7 and, in the illustrated example, extends to the z1 side in the thickness direction z. The third sub-wiring portion 432 is covered by the sealing resin 7. The shape and size of the third sub-wiring portion 432 are not limited in any way. In the illustrated example, the third sub-wiring portion 432 overlaps the first conductive layer 1A when viewed in the thickness direction z. The third sub-wiring portion 432 has a portion facing the x1 side in the first direction x with respect to the multiple first switching elements 21.

[0048] The fourth sub-conductive member 44 is electrically connected to the fourth electrode 214 of the first switching element 21. The fourth sub-conductive member 44 is disposed between the first sub-conductive member 41 and the second sub-conductive member 42 in the first direction x. The fourth sub-conductive member 44 is also disposed between the second sub-conductive member 42 and the third sub-conductive member 43 in the first direction x. The fourth sub-conductive member 44 has a fourth sub-terminal portion 441 and a fourth sub-wiring portion 442. The fourth sub-terminal portion 441 protrudes from the sealing resin 7 and, in the illustrated example, extends toward the z1 side in the thickness direction z. The fourth sub-wiring portion 442 is covered by the sealing resin 7. The shape and size of the fourth sub-wiring portion 442 are not limited in any way. In the illustrated example, the fourth sub-wiring portion 442 overlaps the first conductive layer 1A when viewed in the thickness direction z. The fourth sub-wiring portion 442 has a portion facing the plurality of first switching elements 21 on the x1 side in the first direction x.

[0049] The fifth sub-conductive member 45 is electrically connected to the fifth electrode 222 of the second switching element 22. The fifth sub-conductive member 45 is disposed on the x2 side of the x1-side edge of the second conductive layer 1B in the first direction x. The fifth sub-conductive member 45 has a fifth sub-terminal portion 451 and a fifth sub-wiring portion 452. The fifth sub-terminal portion 451 protrudes from the sealing resin 7 and, in the illustrated example, extends to the z1 side in the thickness direction z. The fifth sub-wiring portion 452 is covered by the sealing resin 7. The shape and size of the fifth sub-wiring portion 452 are not limited in any way. In the illustrated example, the fifth sub-wiring portion 452 is located on the y1 side in the second direction y with respect to the second conductive layer 1B and the support member 10B.

[0050] The sixth sub-conductive member 46 is electrically connected to the fifth electrode 222 of the second switching element 22. The sixth sub-conductive member 46 is disposed on the x2 side in the first direction x with respect to the fifth sub-conductive member 45. The sixth sub-conductive member 46 has a sixth sub-terminal portion 461 and a sixth sub-wiring portion 462. The sixth sub-terminal portion 461 protrudes from the sealing resin 7 and, in the illustrated example, extends to the z1 side in the thickness direction z. The sixth sub-wiring portion 462 is covered by the sealing resin 7. The shape and size of the sixth sub-wiring portion 462 are not limited in any way. In the illustrated example, the sixth sub-wiring portion 462 is located on the y1 side in the second direction y with respect to the second conductive layer 1B and the support member 10B.

[0051] The seventh sub-conductive member 47 is electrically connected to the seventh electrode 223 of the second switching element 22. The seventh sub-conductive member 47 is disposed between the fifth sub-conductive member 45 and the sixth sub-conductive member 46 in the first direction x. The seventh sub-conductive member 47 has a seventh sub-terminal portion 471 and a seventh sub-wiring portion 472. The seventh sub-terminal portion 471 protrudes from the sealing resin 7 and, in the illustrated example, extends to the z1 side in the thickness direction z. The seventh sub-wiring portion 472 is covered by the sealing resin 7. The shape and size of the seventh sub-wiring portion 472 are not limited in any way. In the illustrated example, the seventh sub-wiring portion 472 overlaps the second conductive layer 1B when viewed in the thickness direction z. The seventh sub-wiring portion 472 has a portion facing the x2 side in the first direction x with respect to the multiple second switching elements 22.

[0052] The eighth sub-conductive member 48 is electrically connected to the eighth electrode 224 of the second switching element 22. The eighth sub-conductive member 48 is disposed between the fifth sub-conductive member 45 and the sixth sub-conductive member 46 in the first direction x. The eighth sub-conductive member 48 is also disposed between the sixth sub-conductive member 46 and the seventh sub-conductive member 47 in the first direction x. The eighth sub-conductive member 48 has an eighth sub-terminal portion 481 and an eighth sub-wiring portion 482. The eighth sub-terminal portion 481 protrudes from the sealing resin 7 and, in the illustrated example, extends toward the z1 side in the thickness direction z. The eighth sub-wiring portion 482 is covered by the sealing resin 7. The shape and size of the eighth sub-wiring portion 482 are not limited in any way. In the illustrated example, the eighth sub-wiring portion 482 overlaps the second conductive layer 1B when viewed in the thickness direction z. The eighth sub-wiring portion 482 has a portion facing the plurality of second switching elements 22 on the x2 side in the first direction x.

[0053] As shown in FIGS. 1, 5, 12, 13, and 14, the multiple first main connection members 51 individually connect the multiple first switching elements 21 and the second conductive layer 1B. The first main connection members 51 are connected to the first electrodes 212 of the first switching elements 21 and the second main surface 11B of the second conductive layer 1B. The specific configuration of the first main connection members 51 is not limited, and they may be wires, ribbons, or plate materials containing a first main metal as a main component. Examples of the first main metal include copper (Cu), aluminum (Al), and alloys thereof. In this example, the first main metal of the first main connection members 51 is copper (Cu). The thickness of the first main connection members 51 is not limited, and the width in the thickness direction z is, for example, approximately 400 μm. The number of the multiple first main connection members 51 is not limited in any way, and in the example shown, two first main connection members 51 are connected to the first electrode 212 of one first switching element 21.

[0054] The first main connection member 51 has a connection portion 511, a connection portion 512, and a loop portion 510. The connection portion 511 is a portion connected to the first electrode 212. In the illustrated example, the connection portions 511 of two first main connection members 51 are aligned in the first direction x on one first electrode 212. The connection portion 512 is a portion connected to the second principal surface 11B of the second conductive layer 1B. In the illustrated example, the connection portions 512 of two first main connection members 51 connected to one first electrode 212 are aligned in the first direction x. The loop portion 510 is connected to the connection portions 511 and 512 and has a curved shape that is convex toward the z1 side in the thickness direction z. As shown in FIG. 5 , in this embodiment, the loop portion 510 straddles the first portion 3321 of the extension portion 332 of the third main conductive member 33.

[0055] As shown in FIGS. 1, 4, 6, 12, 13, and 15, the multiple second main connection members 52 individually connect the multiple second switching elements 22 and the third main conductive member 33. The second main connection members 52 are connected to the fifth electrodes 222 of the second switching elements 22 and the first portions 3321 of the extension portions 332 of the third main conductive member 33. The specific configuration of the multiple second main connection members 52 is not limited, and they may be wires, ribbons, or plate materials primarily composed of a second main metal. Examples of the second main metal include copper (Cu), aluminum (Al), and alloys thereof. In this example, the second main metal of the second main connection members 52 is copper (Cu). The thickness of the second main connection members 52 is not limited, and the width in the thickness direction z is, for example, approximately 400 μm. The number of the multiple second main connection members 52 is not limited in any way, and in the example shown, two second main connection members 52 are connected to the fifth electrode 222 of one second switching element 22.

[0056] The second main connection member 52 has a connection portion 521, a connection portion 522, and a loop portion 520. The connection portion 521 is a portion connected to the fifth electrode 222. In the illustrated example, the connection portions 521 of two second main connection members 52 are aligned in the first direction x on one fifth electrode 222. The connection portion 522 is a portion connected to the first portion 3321 of the extension portion 332 of the third main conductive member 33. In the illustrated example, the connection portions 522 of two second main connection members 52 connected to one fifth electrode 222 are aligned in the first direction x. The loop portion 520 is connected to the connection portion 521 and the connection portion 522, and has a curved shape that is convex toward the z1 side in the thickness direction z.

[0057] The plurality of sub-connection members 61 to 68 are electrically connected to either the plurality of first switching elements 21 or the plurality of second switching elements 22. In the following description, the plurality of sub-connection members 61 to 68 are classified into a first sub-connection member 61, a second sub-connection member 62, a third sub-connection member 63, a fourth sub-connection member 64, a fifth sub-connection member 65, a sixth sub-connection member 66, a seventh sub-connection member 67, and an eighth sub-connection member 68.

[0058] As shown in FIGS. 1, 12, and 14, the first sub-connecting member 61 electrically connects the first switching element 21 and the first sub-conductive member 41. In the illustrated example, the first sub-connecting member 61 is connected to the first electrode 212 of the first switching element 21 located closest to the y1 side in the second direction y among the multiple first switching elements 21 and the first sub-wiring portion 412 of the first sub-conductive member 41. The specific configuration of the first sub-connecting member 61 is not limited, and it may be a wire, ribbon, or the like containing a first sub-metal as a main component. The first sub-metal is a metal different from the first main metal, and includes, for example, Cu (copper), Al (aluminum), Ni (nickel), or alloys thereof. In this example, the first sub-metal of the first sub-connecting member 61 is Cu (copper). The thickness of the first sub-connecting member 61 is not limited, and for example, the width in the thickness direction z is approximately 150 μm. The thickness of the first auxiliary connection member 61 is smaller than the thickness of the first main connection member 51.

[0059] The first sub-connecting member 61 has a connecting portion 611 and a loop portion 610. The connecting portion 611 is a portion connected to the first electrode 212 of the first switching element 21. In the example shown, the connecting portion 611 is disposed on the y1 side of the two connecting portions 511 in the second direction y on the first electrode 212. The loop portion 610 is a portion that is connected to the connecting portion 611 and extends to the first sub-wiring portion 412. The loop portion 610 has a curved shape that is convex toward the z1 side in the thickness direction z.

[0060] As shown in FIGS. 1, 12, and 14, the second sub-connecting member 62 electrically connects the first switching element 21 and the second sub-conductive member 42. In the illustrated example, the second sub-connecting member 62 is connected to the first electrode 212 of the first switching element 21 located closest to the y1 side in the second direction y and the second sub-wiring portion 422 of the second sub-conductive member 42. The specific configuration of the second sub-connecting member 62 is not limited, and it may be a wire, ribbon, or the like containing a second sub-metal as its main component. The second sub-metal is a metal different from the first main metal, and includes, for example, copper (Cu), aluminum (Al), nickel (Ni), and alloys thereof. In this example, the second sub-metal of the second sub-connecting member 62 is constantan, which is an example of an alloy of copper (Cu) and nickel (Ni). The thickness of the second sub-connecting member 62 is not limited, and for example, the width in the thickness direction z is approximately 150 μm. The thickness of the second auxiliary connection member 62 is thinner than the thickness of the first main connection member 51. The first auxiliary connection member 61 and the second auxiliary connection member 62 have different thermoelectric powers and are used, for example, as a thermocouple.

[0061] The second sub-connection member 62 has a connection portion 621 and a loop portion 620. The connection portion 621 is a portion connected to the first electrode 212 of the first switching element 21. In the example shown, the connection portion 621 is arranged on the x1 side in the first direction x with respect to the two connection portions 511 on the first electrode 212. The connection portion 621 is also located between the two connection portions 511 in the second direction y. The loop portion 620 is a portion that is connected to the connection portion 621 and extends to the second sub-wiring portion 422. The loop portion 620 has a curved shape that is convex toward the z1 side in the thickness direction z.

[0062] As shown in FIGS. 1, 12, and 14, the third sub-connecting member 63 electrically connects the first switching elements 21 and the third sub-conductive members 43. In the illustrated example, the third sub-connecting members 63 are connected to the third electrodes 213 of the first switching elements 21 and the third sub-wiring portions 432 of the third sub-conductive members 43. The specific configuration of the third sub-connecting members 63 is not limited, and may be a wire, ribbon, or the like containing a third sub-metal as a main component. Examples of the third sub-metal include Cu (copper), Al (aluminum), Ni (nickel), and alloys thereof. In this example, the third sub-metal of the third sub-connecting member 63 is Al (aluminum). The thickness of the third sub-connecting member 63 is not limited, and the width in the thickness direction z is, for example, approximately 150 μm.

[0063] As shown in FIGS. 1, 12, and 14, the fourth sub-connecting member 64 electrically connects the first switching elements 21 and the fourth sub-conductive members 44. In the illustrated example, the plurality of fourth sub-connecting members 64 are connected to the fourth electrodes 214 of the plurality of first switching elements 21 and the fourth sub-wiring portions 442 of the fourth sub-conductive members 44. The specific configuration of the fourth sub-connecting member 64 is not limited, and it may be a wire, ribbon, or the like containing a fourth sub-metal as a main component. Examples of the fourth sub-metal include Cu (copper), Al (aluminum), Ni (nickel), and alloys thereof. In this example, the fourth sub-metal of the fourth sub-connecting member 64 is Cu (copper). The thickness of the fourth sub-connecting member 64 is not limited, and for example, the width in the thickness direction z is approximately 150 μm.

[0064] As shown in FIGS. 1, 13, and 15, the fifth sub-connecting member 65 electrically connects the second switching element 22 and the fifth sub-conductive member 45. In the illustrated example, the fifth sub-connecting member 65 is connected to the fifth electrode 222 of the second switching element 22 located closest to the y1 side in the second direction y and the fifth sub-wiring portion 452 of the fifth sub-conductive member 45. The specific configuration of the fifth sub-connecting member 65 is not limited, and it may be a wire, ribbon, or the like containing a fifth sub-metal as its main component. The fifth sub-metal is a metal different from the second main metal, and includes, for example, copper (Cu), aluminum (Al), nickel (Ni), or alloys thereof. In this example, the fifth sub-metal of the fifth sub-connecting member 65 is copper (Cu). The thickness of the fifth sub-connecting member 65 is not limited, and for example, the width in the thickness direction z is approximately 150 μm. The thickness of the fifth auxiliary connection member 65 is smaller than the thickness of the second main connection member 52.

[0065] The fifth sub-connection member 65 has a connection portion 651 and a loop portion 650. The connection portion 651 is a portion connected to the fifth electrode 222 of the second switching element 22. In the example shown, the connection portion 651 is disposed on the y1 side of the two connection portions 521 in the second direction y on the fifth electrode 222. The loop portion 650 is a portion that is connected to the connection portion 651 and extends to the fifth sub-wiring portion 452. The loop portion 650 has a curved shape that is convex toward the z1 side in the thickness direction z.

[0066] As shown in FIGS. 1, 13, and 15, the sixth sub-connecting member 66 electrically connects the second switching element 22 and the sixth sub-conductive member 46. In the illustrated example, the sixth sub-connecting member 66 is connected to the fifth electrode 222 of the second switching element 22 located closest to the y1 side in the second direction y and the sixth sub-wiring portion 462 of the sixth sub-conductive member 46. The specific configuration of the sixth sub-connecting member 66 is not limited, and it may be a wire, ribbon, or the like containing a sixth sub-metal as its main component. The sixth sub-metal is a metal different from the second main metal, and includes, for example, copper (Cu), aluminum (Al), nickel (Ni), and alloys thereof. In this example, the sixth sub-metal of the sixth sub-connecting member 66 is constantan, which is an example of an alloy of copper (Cu) and nickel (Ni). The thickness of the sixth sub-connecting member 66 is not limited, and for example, the width in the thickness direction z is approximately 150 μm. The thickness of the sixth sub-connection member 66 is thinner than the thickness of the second main connection member 52. The fifth sub-connection member 65 and the sixth sub-connection member 66 have different thermoelectric powers and are used, for example, as a thermocouple.

[0067] The sixth sub-connection member 66 has a connection portion 661 and a loop portion 660. The connection portion 661 is a portion connected to the fifth electrode 222 of the second switching element 22. In the example shown, the connection portion 661 is disposed on the x2 side of the two connection portions 521 in the first direction x on the fifth electrode 222. The connection portion 661 is also located between the two connection portions 521 in the second direction y. The loop portion 660 is a portion that is connected to the connection portion 661 and extends to the sixth sub-wiring portion 462. The loop portion 660 has a curved shape that is convex toward the z1 side in the thickness direction z.

[0068] As shown in FIGS. 1, 13, and 15, the seventh sub-connecting member 67 electrically connects the second switching elements 22 and the seventh sub-conductive member 47. In the illustrated example, the seventh sub-connecting members 67 are connected to the seventh electrodes 223 of the second switching elements 22 and the seventh sub-wiring portions 472 of the seventh sub-conductive members 47. The specific configuration of the seventh sub-connecting member 67 is not limited, and it may be a wire, ribbon, or the like containing a seventh sub-metal as its main component. Examples of the seventh sub-metal include Cu (copper), Al (aluminum), Ni (nickel), and alloys thereof. In this example, the seventh sub-connecting member 67 is Al (aluminum). The thickness of the seventh sub-connecting member 67 is not limited, and the width in the thickness direction z is, for example, approximately 150 μm.

[0069] As shown in FIGS. 1, 13, and 15, the eighth sub-connecting member 68 electrically connects the second switching elements 22 and the eighth sub-conductive member 48. In the illustrated example, the eighth sub-connecting members 68 are connected to the eighth electrodes 224 of the second switching elements 22 and the eighth sub-wiring portions 482 of the eighth sub-conductive members 48. The specific configuration of the eighth sub-connecting members 68 is not limited, and may be a wire, ribbon, or the like containing an eighth sub-metal as a main component. Examples of the eighth sub-metal include Cu (copper), Al (aluminum), Ni (nickel), and alloys thereof. In this example, the eighth sub-metal of the eighth sub-connecting member 68 is Cu (copper). The thickness of the eighth sub-connecting member 68 is not limited, and the width in the thickness direction z is, for example, approximately 150 μm.

[0070] As shown in FIGS. 1 to 11 , the sealing resin 7 covers the first conductive layer 1A, the second conductive layer 1B, the first switching elements 21, the second switching elements 22, the first main connecting members 51, the second main connecting members 52, and the sub-connecting members 61 to 68. The sealing resin 7 also covers portions of the first main conductive member 31, the second main conductive member 32, and the third main conductive member 33, portions of the sub-conductive members 41 to 48, and portions of the support member 10A and the support member 10B. The sealing resin 7 is electrically insulating. The sealing resin 7 is made of a material containing, for example, black epoxy resin. The sealing resin 7 has a top surface 71, a bottom surface 72, a first side surface 73, a second side surface 74, a third side surface 75, and a fourth side surface 76.

[0071] The top surface 71 faces the z1 side in the thickness direction z, and the bottom surface 72 faces the z2 side in the thickness direction z.

[0072] The first side surface 73 faces the x1 side in the first direction x. The first main terminal 311 and the third main terminal 331 protrude from the first side surface 73. The second side surface 74 faces the x2 side in the first direction x. The second main terminal 321 protrudes from the second side surface 74.

[0073] The third side surface 75 faces the y1 side in the second direction y. The fourth side surface 76 faces the y2 side in the second direction y. A plurality of secondary conductive members 41 to 48 protrude from the third side surface 75.

[0074] Next, the operation of the semiconductor device A1 will be described.

[0075] 14 , a first main connection member 51 and a first sub-connection member 61 are connected to a first electrode 212 of a first switching element 21. The first main metal, which is the main component of the first main connection member 51, and the first sub-metal, which is the main component of the first sub-connection member 61, are different from each other. By connecting such connection members having different main components to the same first electrode 212, it is possible to prevent the first switching element 21 from becoming larger than, for example, when separate electrodes for connecting the first main connection member 51 and the first sub-connection member 61 are provided in the first switching element 21. Therefore, it is possible to connect a wider variety of connection members while miniaturizing the first switching element 21.

[0076] In addition, a second sub-connecting member 62 is connected to the first electrode 212. The second sub-metal, which is the main component of the second sub-connecting member 62, is different from the first main metal. Furthermore, the second sub-metal is further different from the first sub-metal. Such a configuration is preferable for reducing the size of the first switching element 21 while enabling the connection of a wider variety of connecting members.

[0077] 15 , the second main connection member 52 and the fifth sub-connection member 65 are connected to the fifth electrode 222 of the second switching element 22. The second main metal, which is the main component of the second main connection member 52, and the fifth sub-metal, which is the main component of the fifth sub-connection member 65, are different from each other. By connecting such connection members having different main components to the same fifth electrode 222, it is possible to prevent the second switching element 22 from becoming larger, compared to, for example, when separate electrodes for connecting the second main connection member 52 and the fifth sub-connection member 65 are provided in the second switching element 22. Therefore, it is possible to connect a wider variety of connection members while miniaturizing the second switching element 22.

[0078] Furthermore, a sixth sub-connecting member 66 is connected to the fifth electrode 222. The sixth sub-metal, which is the main component of the sixth sub-connecting member 66, is different from the second main metal. Furthermore, the sixth sub-metal is further different from the fifth sub-metal. Such a configuration is preferable for reducing the size of the second switching element 22 while enabling the connection of a wider variety of connecting members.

[0079] 14, the connection portion 611 is disposed on the y1 side in the second direction y relative to the connection portion 511. On the other hand, the connection portion 621 is disposed on the x1 side in the first direction x relative to the connection portion 511. This allows the connection portion 611 and the connection portion 621 to be spaced apart from each other, thereby suppressing mutual interference.

[0080] 15, connecting portion 651 is disposed on the y1 side in the second direction y relative to connecting portion 521. On the other hand, connecting portion 661 is disposed on the x2 side in the first direction x relative to connecting portion 521. This allows connecting portion 651 and connecting portion 661 to be spaced apart from each other, thereby suppressing mutual interference.

[0081] As shown in FIGS. 4 to 6 , the first portion 3321 is located between the plurality of first switching elements 21 and the plurality of second switching elements 22 in the thickness direction z. Furthermore, the distance z1 from the first main surface 11A to the first portion 3321 in the thickness direction z is smaller than the distance z0 from the first main surface 11A to the third main terminal 331 in the thickness direction z. This makes it possible to reduce the distance from the first main surface 11A in the thickness direction z of the first main connection member 51, which straddles the first portion 3321 on one side in the thickness direction z, while avoiding contact or short-circuiting between the first main connection member 51 and the first portion 3321. This allows the semiconductor device A1 to operate properly and be miniaturized.

[0082] 16 to 60 show other embodiments of the present disclosure. In these figures, elements that are the same as or similar to those in the above-described embodiment are given the same reference numerals. Furthermore, the configurations of the various parts in each of the modified examples and embodiments can be combined with each other as appropriate within the scope of not causing technical contradictions.

[0083] 16 to 20 show a semiconductor device according to a second embodiment of the present disclosure. A semiconductor device A2 of this embodiment includes a plurality of third main connection members 53 and a plurality of fourth main connection members .

[0084] The third main connection members 53 are connected to the first electrodes 212 of adjacent first switching elements 21. The specific configuration of the third main connection members 53 is not limited, and they may be wires, ribbons, or plate materials whose main component is a third main metal. Examples of the third main metal include copper (Cu), aluminum (Al), and alloys thereof. The third main metal of the third main connection members 53 in this example is copper (Cu). The thickness of the third main connection members 53 is not limited, and for example, the width in the thickness direction z is approximately 400 μm. The thickness of the third main connection members 53 is greater than the thicknesses of the first sub-connection members 61 and the second sub-connection members 62. The number of the third main connection members 53 is not limited, and in the example shown, the first electrodes 212 of adjacent first switching elements 21 are connected by two third main connection members 53.

[0085] The third main connection member 53 has two connection portions 531 and a loop portion 530. The connection portion 531 is a portion connected to the first electrode 212. In the example shown, the connection portions 531 of the two third main connection members 53 are lined up in the first direction x on the y1 side or y2 side in the second direction y of one first electrode 212. The loop portion 530 is connected to the two connection portions 531 and has a curved shape that is convex toward the z1 side in the thickness direction z.

[0086] 19 shows the first switching element 21 that is located closest to the y1 side in the second direction y among the multiple first switching elements 21. In the first electrode 212 of this first switching element 21, the two connection portions 531 are arranged on the y2 side in the second direction y with respect to the connection portions 611 and the connection portion 621. The two connection portions 531 are also arranged on the x1 side in the first direction x and the y2 side in the second direction y with respect to the two connection portions 511.

[0087] The plurality of fourth main connection members 54 are connected to the fifth electrodes 222 of adjacent second switching elements 22. The specific configuration of the fourth main connection members 54 is not limited in any way, and they may be wires, ribbons, or plate materials whose main component is a fourth main metal. Examples of the fourth main metal include Cu (copper), Al (aluminum), and alloys thereof. In this example, the fourth main metal of the fourth main connection members 54 is Cu (copper). The thickness of the fourth main connection members 54 is not limited in any way, and for example, the width as viewed in the thickness direction z is approximately 400 μm. The thickness of the fourth main connection members 54 is greater than the thicknesses of the sixth sub-connection members 66 and the seventh sub-connection members 67. The number of the plurality of fourth main connection members 54 is not limited in any way, and in the example shown, the fifth electrodes 222 of adjacent second switching elements 22 are connected by two fourth main connection members 54.

[0088] The fourth main connection member 54 has two connection portions 541 and a loop portion 540. The connection portion 541 is a portion connected to the fifth electrode 222. In the example shown, the connection portions 541 of the two fourth main connection members 54 are lined up in the first direction x on the y1 side or y2 side in the second direction y of one fifth electrode 222. The loop portion 540 is connected to the two connection portions 541 and has a curved shape that is convex toward the z1 side in the thickness direction z.

[0089] 20 shows the second switching element 22 that is located closest to the y1 side in the second direction y among the multiple second switching elements 22. In the fifth electrode 222 of this second switching element 22, the two connection portions 541 are arranged on the y2 side in the second direction y with respect to the connection portions 651 and the connection portion 661. The two connection portions 541 are also arranged on the x2 side in the first direction x and the y2 side in the second direction y with respect to the two connection portions 521.

[0090] This embodiment also enables the connection of a wider variety of connecting members while miniaturizing the first switching element 21. Furthermore, according to this embodiment, the first electrodes 212 of adjacent first switching elements 21 are conductively connected to each other by the third main connecting member 53. This makes it possible to suppress unevenness in current among the plurality of first switching elements 21. Furthermore, the fifth electrodes 222 of adjacent second switching elements 22 are conductively connected to each other by the fourth main connecting member 54. This makes it possible to suppress unevenness in current among the plurality of second switching elements 22.

[0091] 21 to 25 show a first modified example of the semiconductor device according to the second embodiment of the present disclosure. In this modified example, the semiconductor device A21 has first main connection member 51, second main connection member 52, third main connection member 53, and fourth main connection member 54 configured differently from the examples described above.

[0092] The thicknesses of the first main connection member 51, the second main connection member 52, the third main connection member 53, and the fourth main connection member 54 of this modified example are greater than the thicknesses of the second main connection member 52, the third main connection member 53, and the fourth main connection member 54 of the above example. There are no limitations on the thicknesses of the second main connection member 52, the third main connection member 53, and the fourth main connection member 54 of this modified example, and for example, the width as viewed in the thickness direction z is at most about 2.0 mm.

[0093] In the present embodiment, one first main connection member 51 is connected to the first electrode 212 of one first switching element 21. Furthermore, one second main connection member 52 is connected to the fifth electrode 222 of one second switching element 22. Furthermore, the first electrodes 212 of adjacent first switching elements 21 are electrically connected by one third main connection member 53. Furthermore, the fifth electrodes 222 of adjacent second switching elements 22 are electrically connected by one fourth main connection member 54.

[0094] This modification also makes it possible to connect a wider variety of connecting members while miniaturizing the first switching element 21. Furthermore, as can be understood from this modification, the specific configurations, such as the thicknesses of the first main connecting member 51, the second main connecting member 52, the third main connecting member 53, and the fourth main connecting member 54, are not limited in any way.

[0095] 26 to 30 show a semiconductor device according to a third embodiment of the present disclosure. The semiconductor device A3 of this embodiment differs from the above-described embodiments in the configurations of the plurality of first sub-connection members 61, the plurality of second sub-connection members 62, the plurality of fifth sub-connection members 65, and the plurality of sixth sub-connection members 66.

[0096] In the present embodiment, a plurality of first sub-connecting members 61 and a plurality of second sub-connecting members 62 are individually connected to the first electrodes 212 of the plurality of first switching elements 21. More specifically, the first electrodes 212 of each first switching element 21 and the first sub-wiring portions 412 of the first sub-conductive members 41 are individually conductively connected by the first sub-connecting members 61. Furthermore, the first electrodes 212 of each first switching element 21 and the second sub-wiring portions 422 of the second sub-conductive members 42 are individually conductively connected by the second sub-connecting members 62. As shown in FIG. 29 , in this example, the connecting portions 611 and the connecting portions 621 are aligned in the second direction y in the first electrodes 212 of each first switching element 21.

[0097] A plurality of fifth sub-connecting members 65 and a plurality of sixth sub-connecting members 66 are individually connected to the fifth electrode 222 of the second switching element 22. More specifically, the fifth electrode 222 of each second switching element 22 and the fifth sub-wiring portion 452 of the fifth sub-conductive member 45 are individually conductively connected by the fifth sub-connecting member 65. Furthermore, the fifth electrode 222 of each second switching element 22 and the sixth sub-wiring portion 462 of the sixth sub-conductive member 46 are individually conductively connected by the sixth sub-connecting member 66. As shown in FIG. 30 , in this example, the connecting portion 651 and the connecting portion 661 are aligned in the second direction y on the fifth electrode 222 of each second switching element 22.

[0098] This embodiment also enables the connection of a wider variety of connecting members while miniaturizing the first switching elements 21. Furthermore, according to this embodiment, the first electrodes 212 of the multiple first switching elements 21 are connected to the first sub-connecting members 61 and the second sub-connecting members 62, respectively. This makes it possible to monitor the average temperature status of the multiple first switching elements 21 using the first sub-terminal portion 411 and the first sub-wiring portion 412. Furthermore, the fifth electrodes 222 of the multiple second switching elements 22 are connected to the fifth sub-connecting members 65 and the sixth sub-connecting members 66, respectively. This makes it possible to monitor the average temperature status of the multiple second switching elements 22 using the fifth sub-terminal portion 451 and the sixth sub-terminal portion 461.

[0099] 31 and 32 show a first modified example of the semiconductor device according to the third embodiment of the present disclosure. In the semiconductor device A31 of this modified example, the arrangement of the connection portion 611, the connection portion 621, the connection portion 641, and the connection portion 651 is different from that of the above-described example.

[0100] 31, in this modification, the connection portion 611 and the connection portion 621 are aligned in the first direction x at the first electrode 212 of each first switching element 21. Furthermore, the connection portion 651 and the connection portion 661 are aligned in the first direction x at the fifth electrode 222 of each second switching element 22.

[0101] This modification also enables connection of a wider variety of connecting members while reducing the size of the first switching element 21. Furthermore, as can be understood from this modification, the arrangement of the connecting portion 611, the connecting portion 621, the connecting portion 651, and the connecting portion 661 is not limited in any way.

[0102] 33 and 34 show a second modified example of the semiconductor device according to the third embodiment of the present disclosure. In the semiconductor device A32 of this modified example, the arrangement of the connection portion 611, the connection portion 621, the connection portion 641, and the connection portion 651 is different from that of the above-described example.

[0103] 33, in this modification, connecting portion 611 is arranged on the y1 side in the second direction y with respect to connecting portion 511. Also, connecting portion 611 is arranged on the x2 side in the first direction x with respect to connecting portion 531, which is located on the y1 side in the second direction y. Connecting portion 621 is arranged on the x1 side in the first direction x with respect to connecting portion 511.

[0104] 34, in this modification, connecting portion 651 is arranged on the y1 side in the second direction y with respect to connecting portion 521. Also, connecting portion 651 is arranged on the x1 side in the first direction x with respect to connecting portion 541, which is located on the y1 side in the second direction y. Connecting portion 661 is arranged on the x2 side in the first direction x with respect to connecting portion 521.

[0105] This modification also enables connection of a wider variety of connecting members while miniaturizing the first switching element 21. Furthermore, as can be seen from this modification, there are no limitations on the arrangement of the connecting portion 611, the connecting portion 621, the connecting portion 651, and the connecting portion 661. The arrangement of the connecting portion 611 and the connecting portion 651 in this modification is preferable for avoiding interference with the connecting portion 621 and the connecting portion 661.

[0106] 35 and 36 show a third modified example of the semiconductor device according to the third embodiment of the present disclosure. In this modified example, semiconductor device A33 differs from the above-described example in the positional relationship between first main connection member 51 and third main connection member 53 and the positional relationship between second main connection member 52 and fourth main connection member 54.

[0107] 35, in this modification, the first main connection member 51 overlaps with the third main connection member 53 on the first electrode 212 of the first switching element 21 as viewed in the thickness direction z. More specifically, the loop portion 510 of the first main connection member 51 overlaps with the connection portion 531 of the third main connection member 53 as viewed in the thickness direction z. The loop portion 510 is located on the z1 side of the connection portion 531 in the thickness direction z.

[0108] 36 , in this modification, the second main connection member 52 overlaps with the fourth main connection member 54 on the fifth electrode 222 of the second switching element 22 as viewed in the thickness direction z. More specifically, the loop portion 520 of the second main connection member 52 overlaps with the connection portion 541 of the fourth main connection member 54 as viewed in the thickness direction z. The loop portion 520 is located on the z1 side of the connection portion 541 in the thickness direction z.

[0109] This modification also enables the connection of a wider variety of connecting members while miniaturizing the first switching element 21. Furthermore, as can be seen from this modification, there are no limitations on the positional relationship between the first main connection member 51 and the third main connection member 53 and the positional relationship between the second main connection member 52 and the fourth main connection member 54. According to this modification, as shown in FIG. 35 , the connecting portion 531 can be disposed on the x2 side in the first direction x, and the connecting portion 511 of the first main connection member 51 can be appropriately positioned. Furthermore, as shown in FIG. 36 , the connecting portion 541 can be disposed on the x1 side in the first direction x, and the connecting portion 521 of the second main connection member 52 can be appropriately positioned.

[0110] 37 and 38 show a fourth modified example of the semiconductor device according to the fourth embodiment of the present disclosure. In the semiconductor device A4 of this embodiment, the configurations of the first main connection member 51, the second main connection member 52, the third main connection member 53, and the fourth main connection member 54 are different from those of the above-described examples.

[0111] 37 , in this embodiment, the first main connection member 51 is formed integrally with the third main connection member 53. In this embodiment, the connection portion 511 of the first main connection member 51 and the connection portion 531 of the third main connection member 53 are shared by each other. Of the two third main connection members 53 arranged side by side in the first direction x, the third main connection member 53 located on the x2 side is formed integrally with the first main connection member 51. The third main connection member 53 located on the x1 side in the first direction x is formed separately from the first main connection member 51.

[0112] 38 , in this embodiment, the second main connection member 52 is formed integrally with the fourth main connection member 54. In this embodiment, the connection portion 521 of the second main connection member 52 and the connection portion 541 of the fourth main connection member 54 are shared by each other. Of the two fourth main connection members 54 lined up in the first direction x, the fourth main connection member 54 located on the x1 side is formed integrally with the second main connection member 52. The fourth main connection member 54 located on the x2 side in the first direction x is formed separately from the second main connection member 52.

[0113] This embodiment also enables the connection of a wider variety of connecting members while miniaturizing the first switching element 21. Furthermore, as can be seen from this embodiment, the first main connecting member 51, the second main connecting member 52, the third main connecting member 53, and the fourth main connecting member 54 may be formed separately from one another, or may be integrally formed with one another. As shown in FIG. 37 , the first main connecting member 51 and the third main connecting member 53 share the connecting portion 511 and the connecting portion 531, thereby reducing the area required for arranging the connecting portion 511 and the connecting portion 531 in the first electrode 212. Furthermore, as shown in FIG. 38 , the second main connecting member 52 and the fourth main connecting member 54 share the connecting portion 521 and the connecting portion 541, thereby reducing the area required for arranging the connecting portion 521 and the connecting portion 541 in the fifth electrode 222.

[0114] 39 and 40 show a first modified example of the semiconductor device according to the fourth embodiment of the present disclosure. As shown in FIG. 39, in a semiconductor device A41 of this modified example, four first main connection members 51 are connected to one first electrode 212. These first main connection members 51 are formed integrally with a third main connection member 53. Furthermore, as shown in FIG. 40, four second main connection members 52 are connected to one fifth electrode 222. These second main connection members 52 are formed integrally with a fourth main connection member 54.

[0115] This modification also enables connection of a wider variety of connecting members while miniaturizing the first switching element 21. Furthermore, as shown in Fig. 39, four connecting portions 511 and four connecting portions 531 are shared by one first electrode 212, thereby reducing the area for arranging the connecting portions 511 and the connecting portions 531. Furthermore, as shown in Fig. 40, four connecting portions 531 and four connecting portions 541 are shared by one first electrode 222, thereby reducing the area for arranging the connecting portions 531 and the connecting portions 541.

[0116] 41 and 42 show a semiconductor device according to a fifth embodiment of the present disclosure. The semiconductor device A5 of this embodiment differs from the above-described embodiments in the arrangement of the second sub-connection member 62 and the sixth sub-connection member 66.

[0117] 41 , the second sub-connection member 62 is connected to the fourth electrode 214. That is, of the two fourth electrodes 214 that the first switching element 21 has, the fourth electrode 214 located on the y1 side in the second direction y is connected to the second sub-connection member 62, and the fourth electrode 214 located on the y2 side is connected to the fourth sub-connection member 64. Both of the two fourth electrodes 214 are connected to the first electrode 212 within the first switching element 21.

[0118] 42, the sixth sub-connection member 66 is connected to the eighth electrode 224. That is, of the two eighth electrodes 224 that the second switching element 22 has, the eighth electrode 224 located on the y1 side in the second direction y is connected to the sixth sub-connection member 66, and the eighth electrode 224 located on the y2 side is connected to the eighth sub-connection member 68. Both of the two eighth electrodes 224 are connected to the fifth electrode 222 within the second switching element 22.

[0119] This embodiment also makes it possible to connect a wider variety of connecting members while miniaturizing the first switching element 21. Furthermore, by connecting the second sub-connecting member 62 to the fourth electrode 214, it is possible to suppress interference at the first electrode 212. Furthermore, by connecting the fourth sub-connecting member 64 to the eighth electrode 224, it is possible to suppress interference at the fifth electrode 222.

[0120] 43 and 44 show a semiconductor device according to a sixth embodiment of the present disclosure. A semiconductor device A6 of this embodiment differs from the above-described embodiments in the shapes of a first electrode 212 and a fifth electrode 222.

[0121] 43, the first electrode 212 of this embodiment has a rectangular shape with a portion recessed toward the x2 side in the first direction x. The first electrode 212 has a shape that has portions located on three sides (the x2 side in the first direction x and both sides in the second direction y) of the third electrode 213. The first sub-connection member 61, the second sub-connection member 62, and the fourth sub-connection member 64 are connected to the first electrode 212.

[0122] 44, the fifth electrode 222 of this embodiment has a rectangular shape with a portion recessed toward the x1 side in the first direction x. The fifth electrode 222 has a shape that has portions located on three sides (the x1 side in the first direction x and both sides in the second direction y) of the seventh electrode 223. The fifth sub-connecting member 65, the sixth sub-connecting member 66, and the eighth sub-connecting member 68 are connected to the fifth electrode 222.

[0123] This embodiment also makes it possible to connect a wider variety of connecting members while miniaturizing the first switching element 21. Furthermore, since the first electrode 212 and the fifth electrode 222 have the shapes of this embodiment, it is possible to connect a wider variety of connecting members while suppressing interference.

[0124] 45 and 46 show a first modified example of the semiconductor device according to the sixth embodiment of the present disclosure. In a semiconductor device A61 of this modified example, as shown in Fig. 45, a connection portion 611 and a connection portion 621 are arranged side by side in the second direction y. The connection portion 611 and the connection portion 621 are arranged on the y1 side in the second direction y with respect to the third electrode 213.

[0125] 46, the connection portion 651 and the connection portion 661 are arranged side by side in the second direction y. The connection portion 651 and the connection portion 661 are arranged on the y1 side of the seventh electrode 223 in the second direction y.

[0126] This modification also enables connection of a wider variety of connecting members while miniaturizing the first switching element 21. Furthermore, this modification allows the plurality of connecting portions 511 and 531 to be arranged farther apart from the connecting portions 611 and 621, as shown in Fig. 45. Furthermore, as shown in Fig. 46, the plurality of connecting portions 521 and 541 to be arranged farther apart from the connecting portions 651 and 661.

[0127] 47 to 52 show a semiconductor device according to a seventh embodiment of the present disclosure. In a semiconductor device A7 of this embodiment, a plurality of third main connection members 53 are integrally formed. In addition, a plurality of fourth main connection members 54 are integrally formed.

[0128] 48 and 50, the third main connection members 53 arranged in the second direction y are integrally formed by sharing a connecting portion 531. As shown in Fig. 48, in each first electrode 212, the connecting portion 531 is all disposed on the y2 side in the second direction y.

[0129] 49 and 51, the multiple fourth main connection members 54 aligned in the second direction y are integrally formed by sharing a connecting portion 541. As shown in Fig. 49, in each fifth electrode 222, the connecting portion 541 is all disposed on the y2 side in the second direction y.

[0130] 50 and 52, the loop portion 530 of the third main connecting member 53 overlaps with the first sub-connecting member 61 and the second sub-connecting member 62 when viewed in the thickness direction z. More specifically, the loop portion 530 overlaps with the connecting portion 611 and the connecting portion 621 when viewed in the thickness direction z. The loop portion 530 is located on the z1 side in the thickness direction z relative to the connecting portion 611 and the connecting portion 621. The loop portion 530 may also overlap with the loop portion 610 and the loop portion 620 when viewed in the thickness direction z. In this case, the loop portion 530 is located on the z1 side in the thickness direction z relative to the loop portion 610 and the loop portion 620.

[0131] 51 , the loop portion 540 of the fourth main connecting member 54 overlaps with the fifth sub-connecting member 65 and the sixth sub-connecting member 66 when viewed in the thickness direction z. More specifically, the loop portion 540 overlaps with the connecting portion 651 and the connecting portion 661 when viewed in the thickness direction z. The loop portion 540 is located on the z1 side in the thickness direction z of the connecting portions 651 and 661. The loop portion 540 may also overlap with the loop portions 650 and 660 when viewed in the thickness direction z. In this case, the loop portion 540 is located on the z1 side in the thickness direction z of the loop portions 650 and 660.

[0132] This embodiment also makes it possible to connect a wider variety of connecting members while miniaturizing the first switching element 21. Furthermore, by integrally forming the multiple third main connecting members 53, it is possible to reduce the area in the first electrode 212 for arranging the connecting portion 531. By integrally forming the multiple fourth main connecting members 54, it is possible to reduce the area in the fifth electrode 222 for arranging the connecting portion 541.

[0133] 48, in each first electrode 212, the connection portions 531 are all disposed on the y2 side in the second direction y, which makes the lengths in the second direction y of the loop portions 530 of the multiple third main connection members 53 more uniform. This makes it possible to suppress variations in electrical resistance between the first electrodes 212 of adjacent first switching elements 21.

[0134] 49, in each fifth electrode 222, the connection portions 541 are all disposed on the y2 side in the second direction y, which makes the lengths in the second direction y of the loop portions 540 of the multiple fourth main connection members 54 more uniform. This makes it possible to suppress variations in electrical resistance between the fifth electrodes 222 of adjacent second switching elements 22.

[0135] 53 to 58 show a first modified example of the semiconductor device according to the seventh embodiment of the present disclosure. In a semiconductor device A71 of this modified example, the thicknesses of the first main connection member 51, the second main connection member 52, the third main connection member 53, and the fourth main connection member 54 are greater than the thicknesses of the second main connection member 52, the third main connection member 53, and the fourth main connection member 54 of the semiconductor device A7 described above. The thicknesses of the second main connection member 52, the third main connection member 53, and the fourth main connection member 54 of this modified example are not limited in any way, and for example, the width as viewed in the thickness direction z is approximately 2.0 mm at most.

[0136] This modification also makes it possible to connect a wider variety of connecting members while miniaturizing the first switching element 21. Furthermore, as can be understood from this modification, the specific configurations, such as the thicknesses of the first main connecting member 51, the second main connecting member 52, the third main connecting member 53, and the fourth main connecting member 54, are not limited in any way.

[0137] 59 and 60 show a semiconductor device according to an eighth embodiment of the present disclosure. The semiconductor device A8 of this embodiment includes four first sub-conductive members 41, four second sub-conductive members 42, four fifth sub-conductive members 45, and four sixth sub-conductive members 46.

[0138] 59, four first sub-connecting members 61 are individually connected to four first sub-conductive members 41. Furthermore, four second sub-connecting members 62 are individually connected to four second sub-conductive members 42.

[0139] 60, four fifth sub-connecting members 65 are individually connected to the four fifth sub-conductive members 45. Furthermore, four sixth sub-connecting members 66 are individually connected to the four sixth sub-conductive members 46.

[0140] This embodiment also enables connection of a wider variety of connecting members while miniaturizing the first switching element 21. Furthermore, according to this modification, by individually using four first sub-terminal portions 411 and four second sub-terminal portions 421, it is possible to individually monitor the temperature conditions of the four first switching elements 21. Furthermore, by individually using four fifth sub-terminal portions 451 and four sixth sub-terminal portions 461, it is possible to individually monitor the temperature conditions of the four second switching elements 22.

[0141] The semiconductor device according to the present disclosure is not limited to the above-described embodiment, and the specific configuration of each part of the semiconductor device according to the present disclosure can be freely modified in various ways.

[0142] Appendix 1. a first switching element disposed on a first side in the thickness direction and having a first electrode through which a main current flows; a first main connection member and a first sub-connection member connected to the first electrode; the first main connection member is composed mainly of a first main metal, The first secondary connection member is mainly composed of a first secondary metal, The semiconductor device, wherein the first main metal and the first sub-metal are different from each other. Appendix 2. 2. The semiconductor device according to claim 1, wherein a cross-sectional area of ​​the first main connection member is larger than a cross-sectional area of ​​the first sub-connection member. Appendix 3. Further, a second sub-connection member connected to the first electrode is provided. The second secondary connection member is mainly composed of a second secondary metal, 3. The semiconductor device of claim 1, wherein the second sub-metal is different from the first main metal and the first sub-metal. Appendix 4. 4. The semiconductor device according to claim 3, wherein a cross-sectional area of ​​the first main connection member is larger than a cross-sectional area of ​​the second sub-connection member. Appendix 5. the first switching element further includes a second electrode disposed on a second side in the thickness direction and through which a main current flows, and a third electrode and a fourth electrode disposed on the first side in the thickness direction, a third sub-connecting member connected to the third electrode and containing a third sub-metal as a main component; The semiconductor device according to claim 3 or 4, further comprising a fourth sub-connecting member connected to the fourth electrode and containing a fourth sub-metal as a main component. Appendix 6. 6. The semiconductor device according to claim 5, wherein the first electrode is larger than the third electrode and the fourth electrode when viewed in the thickness direction. Appendix 7. a first conductive layer having a first main surface facing the first side in the thickness direction and disposed on a first side in a first direction perpendicular to the thickness direction; a second conductive layer having a second main surface facing the first side in the thickness direction and disposed on a second side in the first direction; a first secondary conductive member and a second secondary conductive member, the second electrode of the first switching element is conductively joined to the first main surface of the first conductive layer, the first main connection member is connected to the second main surface of the second conductive layer, the first sub-connection member is connected to the first sub-conductive member, 7. The semiconductor device according to claim 5, wherein the second sub-connection member is connected to the second sub-conductive member. Appendix 8. Further comprising a third sub-conductive member and a fourth sub-conductive member; the third sub-connection member is connected to the third sub-conductive member, 8. The semiconductor device according to claim 7, wherein the fourth sub-connection member is connected to the fourth sub-conductive member. Appendix 9. 9. The semiconductor device according to claim 8, comprising a plurality of the first switching elements arranged in a second direction perpendicular to the thickness direction and the first direction. Appendix 10. a plurality of second switching elements each having a fifth electrode disposed on the first side in the thickness direction and a sixth electrode disposed on the second side, the second switching elements being arranged in the second direction; a plurality of second main connection members individually connected to the fifth electrode and the first main surface of the first conductive layer; A fifth secondary conductive member; a fifth sub-connecting member connected to the fifth electrode and the fifth sub-conductive member and containing a fifth sub-metal as a main component; the second main connection member is mainly composed of a second main metal, 10. The semiconductor device of claim 9, wherein the second main metal and the fifth sub-metal are different from each other. Appendix 11. A sixth sub-conductive member; a sixth sub-connecting member connected to the sixth electrode and the sixth sub-conductive member and containing a sixth sub-metal as a main component; 11. The semiconductor device of claim 10, wherein the sixth minor metal is different from the second major metal and the fifth minor metal. Appendix 12. a first main conductive member conductively joined to the first main surface of the first conductive layer; a second main conductive member conductively joined to the second main surface of the second conductive layer; a third main conductive member, 12. The semiconductor device according to claim 11, wherein the second main connection member is connected to the third main conductive member. Appendix 13. each of the second switching elements has a seventh electrode and an eighth electrode arranged on the first side in the thickness direction; a seventh sub-conductive member and an eighth sub-conductive member; a seventh sub-connecting member connected to the seventh electrode and the seventh sub-conductive member and containing a seventh sub-metal as a main component; 13. The semiconductor device according to claim 12, further comprising an eighth sub-connecting member connected to the eighth electrode and the eighth sub-conductive member and containing an eighth sub-metal as a main component. Appendix 14. 14. The semiconductor device according to claim 13, further comprising a third main connection member connected to the first electrodes of adjacent first switching elements. Appendix 15. 15. The semiconductor device according to claim 14, wherein the third main connection member is integrally formed with the first main connection member. Appendix 16. 16. The semiconductor device according to claim 14, further comprising a fourth main connection member connected to the fifth electrode of an adjacent second switching element. Appendix 17. 17. The semiconductor device according to claim 16, wherein the fourth main connection member is integrally formed with the second main connection member. [Explanation of symbols]

[0143] A1,A2,A21,A3,A31,A32,A33,A4,A41,A5,A6,A61,A7,A71,A8: Semiconductor device 1A: First conductive layer 1B: Second conductive layer 7: Sealing resin 10A: Support member 10B: Support member 11A: 1st main surface 11B: 2nd main surface 21: First switching element 22: Second switching element 29: Conductive bonding layer 31: First main conductive member 32: Second main conductive member 33: Third main conductive member 41: First auxiliary conductive member 42: Second auxiliary conductive member 43: Third auxiliary conductive member 44: Fourth auxiliary conductive member 45: Fifth auxiliary conductive member 46: Sixth auxiliary conductive member 47: Seventh auxiliary conductive member 48: Eighth auxiliary conductive member 51: First main connecting member 52: Second main connecting member 53: Third main connecting member 54: Fourth main connecting member 61: First auxiliary connecting member 62: Second auxiliary connecting member 63: Third auxiliary connecting member 64: Fourth auxiliary connecting member 65: Fifth auxiliary connecting member 66: Sixth auxiliary connecting member 67: Seventh auxiliary connecting member 68: Eighth auxiliary connecting member 71:Top surface 72: Bottom 73 :1st side 74:Second side 75:Third side 76: 4th side 101: Insulating layer 102:Support layer 103: Heat dissipation layer 211: 2nd electrode 212: 1st electrode 213:Third electrode 214: 4th electrode 221: 6th electrode 222: 5th electrode 223: 7th electrode 224: 8th electrode 311: 1st main terminal 319: 1st pillow material 321: 2nd main terminal 329:Second pillow material 331: 3rd main terminal 332: Extension part 411: 1st sub-terminal section 412: 1st sub wiring section 421: 2nd sub-terminal section 422: 2nd sub wiring section 431: 3rd sub-terminal section 432: 3rd sub wiring section 441: 4th sub-terminal section 442: 4th sub wiring section 451: 5th sub-terminal section 452: 5th sub wiring section 461: 6th sub-terminal section 462: 6th sub wiring section 471: 7th sub-terminal section 472: 7th sub wiring section 481: 8th sub-terminal section 482: 8th sub wiring section 510: Loop section 511: Connection 512: Connection 520: Loop section 521: Connection 522: Connection 530: Loop section 531: Connection 540: Loop section 541: Connection 610: Loop section 611: Connection part 620: Loop section 621: Connection part 641: Connection 650: Loop section 651: Connection 660: Loop section 661: Connection part 3111: First mounting hole 3211: Second mounting hole 3311: Third mounting hole 3321 :Part 1 3322 :Part 2 3323 :Part 3 x :1st direction y: second direction z: thickness direction z0,z1,z2: distance

Claims

1. a first switching element disposed on a first side in the thickness direction and having a first electrode through which a main current flows; a first main connection member and a first sub-connection member connected to the first electrode; the first main connection member is composed mainly of a first main metal, The first sub-connecting member is mainly composed of a first sub-metal, The semiconductor device, wherein the first main metal and the first sub-metal are different from each other.

2. 2. The semiconductor device according to claim 1, wherein a cross-sectional area of ​​said first main connection member is larger than a cross-sectional area of ​​said first sub-connection member.

3. Further, a second sub-connection member is provided connected to the first electrode, The second sub-connecting member is mainly composed of a second sub-metal, The semiconductor device according to claim 1 , wherein the second sub-metal is different from the first main metal and the first sub-metal.

4. 4. The semiconductor device according to claim 3, wherein a cross-sectional area of ​​said first main connection member is larger than a cross-sectional area of ​​said second sub-connection member.

5. the first switching element further includes a second electrode disposed on a second side in the thickness direction and through which a main current flows, and a third electrode and a fourth electrode disposed on the first side in the thickness direction, a third sub-connecting member connected to the third electrode and containing a third sub-metal as a main component; The semiconductor device according to claim 3 , further comprising: a fourth sub-connecting member connected to said fourth electrode and containing a fourth sub-metal as a main component.

6. The semiconductor device according to claim 5 , wherein the first electrode is larger than the third electrode and the fourth electrode when viewed in the thickness direction.

7. a first conductive layer having a first main surface facing the first side in the thickness direction and disposed on a first side in a first direction perpendicular to the thickness direction; a second conductive layer having a second main surface facing the first side in the thickness direction and disposed on a second side in the first direction; a first secondary conductive member and a second secondary conductive member, the second electrode of the first switching element is conductively joined to the first main surface of the first conductive layer, the first main connection member is connected to the second main surface of the second conductive layer, the first sub-connection member is connected to the first sub-conductive member, The semiconductor device according to claim 5 , wherein the second sub-connecting member is connected to the second sub-conductive member.

8. Further comprising a third sub-conductive member and a fourth sub-conductive member, the third sub-connection member is connected to the third sub-conductive member, The semiconductor device according to claim 7 , wherein the fourth sub-connecting member is connected to the fourth sub-conductive member.

9. The semiconductor device according to claim 8 , further comprising a plurality of said first switching elements arranged in said thickness direction and a second direction perpendicular to said first direction.

10. a plurality of second switching elements each having a fifth electrode disposed on the first side in the thickness direction and a sixth electrode disposed on the second side, the second switching elements being arranged in the second direction; a plurality of second main connection members individually connected to the fifth electrode and the first main surface of the first conductive layer; A fifth sub-conductive member; a fifth sub-connecting member connected to the fifth electrode and the fifth sub-conductive member and containing a fifth sub-metal as a main component; the second main connection member is mainly composed of a second main metal, The semiconductor device according to claim 9 , wherein the second main metal and the fifth minor metal are different from each other.

11. A sixth sub-conductive member; a sixth sub-connecting member connected to the sixth electrode and the sixth sub-conductive member and containing a sixth sub-metal as a main component; The semiconductor device of claim 10 , wherein the sixth minor metal is different from the second major metal and the fifth minor metal.

12. a first main conductive member conductively joined to the first main surface of the first conductive layer; a second main conductive member conductively joined to the second main surface of the second conductive layer; a third main conductive member, The semiconductor device according to claim 11 , wherein the second main connecting member is connected to the third main conductive member.

13. each of the second switching elements has a seventh electrode and an eighth electrode arranged on the first side in the thickness direction; a seventh sub-conductive member and an eighth sub-conductive member; a seventh sub-connecting member connected to the seventh electrode and the seventh sub-conductive member and containing a seventh sub-metal as a main component; 13. The semiconductor device according to claim 12, further comprising: an eighth sub-connecting member connected to said eighth electrode and said eighth sub-conductive member, said eighth sub-connecting member being mainly composed of an eighth sub-metal.

14. The semiconductor device according to claim 13 , further comprising a third main connection member connected to said first electrodes of adjacent said first switching elements.

15. 15. The semiconductor device according to claim 14, wherein said third main connection member is formed integrally with said first main connection member.

16. The semiconductor device according to claim 14 , further comprising a fourth main connection member connected to said fifth electrode of said second switching element adjacent to said second switching element.

17. 17. The semiconductor device according to claim 16, wherein said fourth main connection member is formed integrally with said second main connection member.

Images