Electronic appliance

Abstract

To provide an electronic appliance with the high security level.SOLUTION: An electronic appliance includes a control unit, a storage unit, and a display unit. The display unit has a function of displaying a first icon, and a function of acquiring first fingerprint information in a display region of the first icon. The storage unit has a function of keeping second fingerprint information. The control unit has a function of checking the first fingerprint information and the second fingerprint information, a function of executing a first process related to the first icon when the first fingerprint information and the second fingerprint information match, and a function of executing a second process when the first fingerprint information and the second fingerprint information do not match.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] FIELD OF THE INVENTION An aspect of the present invention relates to an electronic device, an authentication method, a display device, and a program.

[0002] One embodiment of the present invention is not limited to the above technical field, and examples of the technical field of one embodiment of the present invention include semiconductor devices, display devices, light-emitting devices, power storage devices, memory devices, electronic devices, lighting devices, input devices (e.g., touch sensors), input / output devices (e.g., touch panels), driving methods thereof, and manufacturing methods thereof. [Background technology]

[0003] In recent years, information terminal devices such as smartphones and other mobile phones, tablet information terminals, and notebook PCs (personal computers) have become widespread. These information terminal devices often contain personal information, and various authentication technologies have been developed to prevent unauthorized use.

[0004] For example, Patent Document 1 discloses an electronic device that includes a fingerprint sensor in a push button switch section. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] US Patent Application Publication No. 2014 / 0056493 Summary of the Invention [Problem to be solved by the invention]

[0006] An object of one embodiment of the present invention is to provide an electronic device with high security, to provide an electronic device that can suitably prevent unauthorized use, or to provide a novel electronic device.

[0007] Note that the description of these problems does not preclude the existence of other problems. One embodiment of the present invention does not necessarily have to solve all of these problems. Problems other than these can be extracted from the description in the specification, drawings, and claims. [Means for solving the problem]

[0008] One aspect of the present invention is a program for causing an electronic device having a display unit having a function of acquiring fingerprint information and a function of displaying a first icon, a control unit, and a memory unit to execute the following steps: acquiring first fingerprint information in a display area of ​​the first icon on the display unit; comparing the first fingerprint information with second fingerprint information held in the memory unit by the control unit; executing a first process associated with the first icon by the control unit if the first fingerprint information and the second fingerprint information match; and executing a second process by the control unit if the first fingerprint information and the second fingerprint information do not match.

[0009] The display unit preferably has a function of detecting a touch action. The program is preferably a program for causing the electronic device to execute a step of detecting a touch action in a display area of ​​the first icon.

[0010] Preferably, the display unit has a function of displaying a second icon. The program may further cause the electronic device to execute the following steps: acquiring third fingerprint information in a display area of ​​the second icon on the display unit; comparing, in the control unit, the third fingerprint information with fourth fingerprint information stored in the storage unit; executing, in the control unit, a third process associated with the second icon if the third fingerprint information and the fourth fingerprint information match; and executing, in the control unit, the fourth process if the third fingerprint information and the fourth fingerprint information do not match. Alternatively, the program may further cause the electronic device to execute the following steps: detecting a touch operation in the display area of ​​the second icon; and executing, in the control unit, the third process associated with the second icon.

[0011] One aspect of the present invention is a program for causing an electronic device having a display unit having a function of acquiring fingerprint information and a function of displaying a first icon, a control unit, and a memory unit to execute the following steps: acquiring multiple pieces of first fingerprint information in a display area of ​​the first icon on the display unit; comparing, in the control unit, each of the multiple pieces of first fingerprint information with multiple pieces of second fingerprint information held in the memory unit; executing, in the control unit, a first process associated with the first icon if each piece of first fingerprint information matches any of the multiple pieces of second fingerprint information; and executing, in the control unit, a second process if at least one piece of first fingerprint information does not match any of the multiple pieces of second fingerprint information.

[0012] The display unit preferably has a function of detecting a touch action. The program is preferably a program for causing the electronic device to execute a step of detecting a touch action in a display area of ​​the first icon.

[0013] One aspect of the present invention is a non-transitory computer-readable recording medium on which any of the above programs is recorded.

[0014] One embodiment of the present invention is an electronic device including a control unit, a storage unit, and a display unit. The display unit has a function of displaying a first icon and a function of acquiring first fingerprint information in a display area of ​​the first icon. The storage unit has a function of retaining second fingerprint information. The control unit has a function of comparing the first fingerprint information with the second fingerprint information, a function of executing a first process associated with the first icon if the first fingerprint information and the second fingerprint information match, and a function of executing a second process if the first fingerprint information and the second fingerprint information do not match.

[0015] In the electronic device, it is preferable that the display unit further has a function of detecting a touch action in the display area of ​​the first icon.

[0016] In the above electronic device, it is preferable that the display unit further has a function of displaying a second icon and a function of acquiring third fingerprint information in the display area of ​​the second icon, the memory unit has a function of retaining fourth fingerprint information, and the control unit has a function of comparing the third fingerprint information with the fourth fingerprint information, a function of executing a third process associated with the second icon if the third fingerprint information and the fourth fingerprint information match, and a function of executing a fourth process if the third fingerprint information and the fourth fingerprint information do not match.

[0017] Alternatively, in the above electronic device, it is preferable that the display unit further has a function of displaying a second icon and a function of detecting a touch action in the display area of ​​the second icon, and the control unit has a function of executing a third process associated with the second icon when the display unit detects a touch action on the second icon.

[0018] One aspect of the present invention is an electronic device including a control unit, a storage unit, and a display unit. The display unit has a function of displaying a first icon and a function of acquiring a plurality of pieces of first fingerprint information in a display area of ​​the first icon. The storage unit has a function of retaining a plurality of pieces of second fingerprint information. The control unit has a function of comparing each piece of first fingerprint information with the plurality of pieces of second fingerprint information, a function of executing a first process associated with the first icon when each piece of first fingerprint information matches any of the plurality of pieces of second fingerprint information, and a function of executing a second process when at least one piece of first fingerprint information does not match any of the plurality of pieces of second fingerprint information.

[0019] In each of the above-described programs and electronic devices, the second process is preferably a process in which information associated with the first icon is locked.

[0020] Alternatively, in each of the above programs and electronic devices, it is preferable that the first processing is processing in which information associated with a first icon is displayed on the display unit, and the second processing is processing in which information different from the information associated with the first icon is displayed on the display unit. [Effects of the Invention]

[0021] According to one embodiment of the present invention, it is possible to provide an electronic device with a high level of security, an electronic device capable of suitably preventing unauthorized use, or a novel electronic device.

[0022] Note that the description of these effects does not preclude the existence of other effects. One embodiment of the present invention does not necessarily have all of these effects. Effects other than these can be extracted from the description in the specification, drawings, and claims. [Brief explanation of the drawings]

[0023] [Figure 1] FIG. 1 is a block diagram of an electronic device according to one embodiment of the present invention. [Figure 2]FIG. 2 is a flowchart illustrating the operation of an electronic device according to one embodiment of the present invention. [Figure 3] 3A to 3C are diagrams illustrating an example of the configuration of an electronic device according to one embodiment of the present invention and an example of an operation method thereof. [Figure 4] 4A to 4C illustrate examples of the configuration of an electronic device of one embodiment of the present invention and examples of an operation method thereof. [Figure 5] 5A to 5C are diagrams illustrating an example of the configuration of an electronic device according to one embodiment of the present invention and an example of an operation method thereof. [Figure 6] 6A to 6C illustrate examples of the configuration of an electronic device according to one embodiment of the present invention and examples of an operation method thereof. [Figure 7] 7A to 7E illustrate examples of the configuration of an electronic device of one embodiment of the present invention and examples of an operation method thereof. [Figure 8] FIG. 8 illustrates a configuration example of an electronic device according to one embodiment of the present invention. [Figure 9] FIG. 9 is a block diagram of an electronic device according to one embodiment of the present invention. [Figure 10] Figures 10A to 10D and 10F are cross-sectional views showing an example of a display device, Figures 10E and 10G are diagrams showing examples of images captured by the display device, and Figures 10H and 10J to 10L are top views showing examples of pixels. [Figure 11] 11A to 11G are top views showing examples of pixels. [Figure 12] 12A and 12B are cross-sectional views showing an example of a display device. [Figure 13] 13A and 13B are cross-sectional views showing an example of a display device. [Figure 14] 14A to 14C are cross-sectional views showing an example of a display device. [Figure 15] Fig. 15A is a cross-sectional view showing an example of a display device, and Fig. 15B and Fig. 15C are diagrams showing an example of an upper surface layout of a resin layer. [Figure 16] FIG. 16 is a perspective view showing an example of a display device. [Figure 17] FIG. 17 is a cross-sectional view showing an example of a display device. [Figure 18] FIG. 18 is a cross-sectional view showing an example of a display device. [Figure 19] 19A is a cross-sectional view illustrating an example of a display device, and FIG 19B is a cross-sectional view illustrating an example of a transistor. [Figure 20] 20A and 20B are circuit diagrams showing examples of pixel circuits. [Figure 21] 21A and 21B are diagrams showing an example of an electronic device. [Figure 22] 22A to 22D are diagrams showing examples of electronic devices. [Figure 23] 23A to 23F are diagrams showing examples of electronic devices. DETAILED DESCRIPTION OF THE INVENTION

[0024] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it will be readily understood by those skilled in the art that various changes can be made in form and detail without departing from the spirit and scope of the present invention. Therefore, the present invention should not be interpreted as being limited to the description of the embodiments shown below.

[0025] In the configuration of the invention described below, the same parts or parts having similar functions are denoted by the same reference numerals in different drawings, and repeated explanations thereof will be omitted. In addition, when referring to similar functions, the same hatch pattern may be used and no particular reference numeral may be assigned.

[0026] Furthermore, for ease of understanding, the position, size, range, etc. of each component shown in the drawings may not represent the actual position, size, range, etc. Therefore, the disclosed invention is not necessarily limited to the position, size, range, etc. disclosed in the drawings.

[0027] It should be noted that the terms "film" and "layer" can be interchangeable depending on the circumstances. For example, the term "conductive layer" can be changed to the term "conductive film." Or, for example, the term "insulating film" can be changed to the term "insulating layer."

[0028] (Embodiment 1) In this embodiment, an electronic device and an operation method of the electronic device according to one embodiment of the present invention will be described.

[0029] In the drawings attached to this specification, the components are classified by function and shown as block diagrams that are independent of each other. However, in reality, it is difficult to completely separate the components by function, and one component may be involved in multiple functions, or one function may be realized by multiple components.

[0030] An electronic device according to one embodiment of the present invention has a function of displaying an icon on a display unit, a function of acquiring fingerprint information in a display area of ​​the icon, and a function of performing user authentication processing using the fingerprint information. For example, when a user accesses high-security information, the fingerprint information can be acquired in a display area of ​​an icon associated with the information, and the authentication processing can be performed. Therefore, even if a third party unlocks the electronic device or logs into various systems in an unauthorized manner, access to the high-security information can be prevented. Furthermore, unauthorized execution of processes requiring high security, such as purchase settlement, email transmission, and file deletion, can also be prevented.

[0031] Furthermore, for example, in the case of an electronic device that requires a password to access information associated with an icon, if the password is illegally obtained, there is a risk that a malicious user may misuse the information associated with the icon. Furthermore, by requiring a password, there is a risk that the malicious user may realize that the information associated with the icon is important. Furthermore, in the case of an electronic device that displays a message indicating that fingerprint authentication failed when a user touches an icon and fingerprint authentication fails, there is a risk that the user may realize that user authentication processing has been performed and that the information associated with the icon is important. Note that, in this specification, "touching an icon" refers to touching the display area of ​​the icon on the display unit.

[0032] In an electronic device according to one embodiment of the present invention, fingerprint authentication is required when a user accesses information associated with an icon, thereby preventing malicious users from accessing the information. Furthermore, in an electronic device according to one embodiment of the present invention, fingerprint authentication is required when a user accesses information associated with an icon, and different information is displayed depending on whether the authentication is successful. Therefore, it is possible to make it difficult for a user to notice that user authentication processing has been performed and that the information associated with the icon is important.

[0033] Furthermore, the electronic device according to one embodiment of the present invention may require fingerprint authentication from multiple people when accessing information associated with an icon, thereby ensuring higher security than electronic devices that require only one fingerprint or a password.

[0034] Below, specific configuration examples of the electronic device of one embodiment of the present invention will be described with reference to the drawings.

[0035] [Example of electronic device configuration] 1 is a block diagram of an electronic device 10 of one embodiment of the present invention. The electronic device 10 includes a control unit 11, a storage unit 12, and a display unit 13. The electronic device 10 can be used as an information terminal device, for example.

[0036] The display unit 13 has the functions of displaying an image, detecting a touch operation, and acquiring fingerprint information. That is, the display unit 13 has the functions of outputting position information of a finger that touches the screen to the control unit 11, and capturing an image of the fingerprint of the finger and outputting the image information as fingerprint information to the control unit. For example, the display unit 13 can be a display device described in detail in the second embodiment. The touch operation includes contact and may also include proximity. The touch operation can also be referred to as an input operation by touch, or touch input.

[0037] It is preferable that touch operations can be detected and fingerprint information can be obtained anywhere on the display unit 13.

[0038] The display unit 13 preferably has a function of detecting multiple touch operations and a function of acquiring fingerprint information of multiple fingers.

[0039] The storage unit 12 has a function of storing pre-registered fingerprint information of a user, and can output the fingerprint information to the control unit 11 in response to a request from the control unit 11.

[0040] The storage unit 12 preferably stores fingerprint information for all fingers that the user uses to operate the screen. For example, it can store fingerprint information for two fingers, one for the index finger of the user's right hand and one for the index finger of the user's left hand. In addition, it is preferable that it can store fingerprint information for one or more of the middle finger, ring finger, little finger, and thumb. It may also store fingerprint information for multiple users.

[0041] The control unit 11 has a function of comparing fingerprint information input from the display unit 13 with pre-registered fingerprint information (this may also be referred to as a fingerprint authentication function). Furthermore, the control unit 11 can execute a process depending on whether the fingerprint authentication is successful or not. If the control unit 11 determines that the fingerprint information matches, the control unit 11 executes a first process associated with the touched icon. Examples of the first process include opening a file or folder, launching software or an application, deleting data, making a purchase, sending an email, and the like. The control unit 11 can also display information on the display unit 13 based on these processes. For example, the control unit 11 displays first information associated with the touched icon on the display unit 13. On the other hand, if the control unit 11 determines that the two pieces of fingerprint information do not match, the control unit 11 executes a second process different from the first process associated with the icon. Examples of the second process include locking information or a system, displaying a message indicating that authentication has failed (an error message), opening a file or folder different from that used in the first process, launching software or an application different from that used in the first process, protecting data, and canceling a purchase process or email transmission. The control unit 11 can further display information on the display unit 13 based on these processes. For example, the control unit 11 locks first information associated with an icon, or displays second information different from the first information associated with the icon.

[0042] The fingerprint authentication method executed by the control unit 11 may be, for example, a template matching method or a pattern matching method, which compares two images and evaluates their similarity. For example, if the similarity value is equal to or greater than a predetermined value, it can be determined that the two pieces of fingerprint information match. Alternatively, the fingerprint authentication process may be performed by inference using machine learning. In this case, it is particularly preferable to perform inference using a neural network.

[0043] Furthermore, the control unit 11 can function as, for example, a central processing unit (CPU). The control unit 11 performs various data processing and program control by interpreting and executing instructions from various programs using a processor. The programs that can be executed by the processor may be stored in a memory area of ​​the processor or may be stored in the storage unit 12.

[0044] [Example of operation of electronic device 10] The following describes an example of the operation of the electronic device 10. Fig. 2 is a flowchart relating to the operation of the electronic device 10. The flowchart shown in Fig. 2 has steps S1 to S5.

[0045] First, in step S1, the display unit 13 detects a touch action. If the display unit 13 detects a touch action on an icon for which fingerprint authentication is performed (YES), the process proceeds to step S2. If the touch action on the icon is not performed (NO), the process waits until a touch action is performed (the process proceeds to step S1 again).

[0046] In step S2, fingerprint information is acquired in the icon display area on the display unit 13.

[0047] In step S3, the control unit 11 compares the fingerprint information acquired in step S2 with pre-registered fingerprint information. If the authentication is successful (if the control unit 11 determines that the two pieces of fingerprint information match) (YES), the process proceeds to step S4. If the authentication is unsuccessful (if the control unit 11 determines that the two pieces of fingerprint information do not match) (NO), the process proceeds to step S5.

[0048] In step S4, control unit 11 executes a process (first process) associated with the icon touched by the user and displayed on display unit 13. Examples of the process associated with the icon displayed on display unit 13 include a process for displaying information associated with the icon.

[0049] In step S5, control unit 11 executes a process (second process) different from the process associated with the icon touched by the user and displayed on display unit 13. Examples of the second process include a process of locking information associated with the icon, a process of displaying second information different from the information associated with the icon, etc.

[0050] This concludes the description of the flowchart shown in FIG.

[0051] Note that the processing method, operation method, operating method, display method, etc. executed by the electronic device of one embodiment of the present invention can be written as, for example, a program. For example, a program describing the processing method, operation method, operating method, display method, etc. executed by the electronic device 10 exemplified above can be stored in a non-transitory computer-readable recording medium (also simply referred to as a recording medium or a storage medium) and can be read and executed by an arithmetic device, etc., possessed by the control unit 11 of the electronic device 10. In other words, a program for causing hardware to execute the operating method, etc. exemplified above, and a non-transitory computer-readable recording medium storing the program are one embodiment of the present invention.

[0052] Examples of non-transitory computer-readable recording media that can be used include hard disk drives (HDDs), solid state drives (SSDs), flash memories, Blu-ray discs, and DVDs.

[0053] [Specific example] Specific examples of electronic devices according to embodiments of the present invention will be described below.

[0054] 3A schematically shows electronic device 30 and finger 21. Electronic device 30 has a display unit 31. Electronic device 30 is, for example, a portable information terminal device that functions as a smartphone. Finger 21 is touching icon 32 displayed on display unit 31. At this time, fingerprint authentication of finger 21 is performed.

[0055] 3B shows a fingerprint 22 acquired from finger 21 and fingerprint information 23 pre-registered in electronic device 30. In this case, fingerprint 22 matches fingerprint information 23, so a process (first process) associated with icon 32 touched by finger 21 is executed.

[0056] 3C shows fingerprint 22X acquired from finger 21 and fingerprint information 23 pre-registered in electronic device 30. In this case, fingerprint 22X does not match fingerprint information 23, so a second process different from the process associated with icon 32 touched by finger 21 is executed.

[0057] 4A shows a state in which finger 21 is touching icon 32 displayed on electronic device 30. At this time, fingerprint 22X of finger 21 does not match fingerprint information 23 previously registered in electronic device 30, so the second process is executed (FIG. 4B). Here, an example is shown in which information associated with icon 32 is locked. At this time, information 33 (Information Locked) indicating that the information associated with icon 32 has been locked may be displayed on display unit 31, as shown in FIG. 4C.

[0058] In Fig. 5A, the fingerprint 22 acquired from the finger 21 touching the icon 32 matches the pre-registered fingerprint information 23, so the first process is executed (Fig. 5B). Here, an example is shown in which information associated with the icon 32 is displayed. As shown in Fig. 5C, the first information 35 (File A) is displayed on the display unit 31.

[0059] 6A and 6B, the fingerprint 22X acquired from the finger 21 that touched the icon 32 does not match the pre-registered fingerprint information 23. Therefore, the second process is executed. FIG. 6C shows an example in which the second information 36 (File B) is displayed.

[0060] As shown in Fig. 4C, if the second process indicates that the information has been locked, the user may realize that user authentication processing has been performed and that the information associated with the icon is important. In Fig. 6C, File B, which is different from File A, which is the first information 35, is displayed as second information 36. This makes it difficult for the user to realize that user authentication processing has been performed and that the information associated with the icon is important.

[0061] FIG. 7 shows an example in which authentication of multiple fingerprints is required to execute a process associated with icon 32. First, as shown in FIG. 7A, fingerprint authentication is initiated when finger 21 touches icon 32. Fingerprint 22 is acquired from finger 21, and if it is determined that fingerprint 22 matches pre-registered fingerprint information 23 (see FIG. 7D), the process proceeds to a step in which the next fingerprint is authenticated. Next, as shown in FIG. 7B, fingerprint authentication is performed when finger 24 touches icon 32. If it is determined that fingerprint 25 acquired from finger 24 matches pre-registered fingerprint information 26 (see FIG. 7E), the process associated with icon 32 is executed. As shown in FIG. 7C, information 34 (Access Accepted) indicating that fingerprint authentication was successful may be displayed on display unit 31.

[0062] After obtaining fingerprint 22 from finger 21 and fingerprint 25 from finger 24, fingerprint 22 may be compared with fingerprint information 23 and fingerprint 25 may be compared with fingerprint information 26. Alternatively, after obtaining fingerprint 22 from finger 21, obtaining fingerprint 25 and comparing fingerprint 22 with fingerprint information 23 may be performed in parallel.

[0063] FIG. 8 shows another example where authentication of multiple fingerprints is required to perform the process associated with icon 32.

[0064] The electronic device 40 shown in FIG. 8 functions as a notebook personal computer.

[0065] The electronic device 40 has a display unit 41, an input unit 42, a plurality of input keys 43, a housing 44, a housing 45, a hinge unit 46, etc. The display unit 41 is provided in the housing 44. The input unit 42 and the input keys 43 are provided in the housing 45. The housings 44 and 45 are connected by the hinge unit 46.

[0066] 8, finger 21 and finger 24 are touching icon 32 displayed on display unit 41. Display unit 41 has a function of capturing images of the fingerprints of the multiple fingers touching icon 32 and outputting the image information as fingerprint information to a control unit (not shown). Therefore, the control unit can recognize that both finger 21 and finger 24 are touching icon 32 and can perform fingerprint authentication of finger 21 and finger 24. Then, if fingerprint authentication of finger 21 and finger 24 is successful, a process associated with icon 32 is executed.

[0067] Note that the fingerprint information to be authenticated may differ depending on the icon. For example, when a finger having a first fingerprint touches a first icon, a process associated with the first icon is executed. On the other hand, when a finger having a fingerprint other than the first fingerprint touches the first icon, the process associated with the first icon is not executed. When a finger having a second fingerprint touches a second icon, the process associated with the second icon is executed. On the other hand, when a finger having a fingerprint other than the second fingerprint touches the second icon, the process associated with the second icon is not executed. This makes it possible, for example, to appropriately create a file that can only be opened with user A's fingerprint, a folder that can only be opened with user B's fingerprint, etc., in an electronic device shared by multiple people.

[0068] Furthermore, among the icons displayed on the electronic device, there may be one or more icons that undergo fingerprint authentication. For example, fingerprint authentication may be performed on an icon associated with information or processing with a high security level, and fingerprint authentication may not be performed on an icon associated with information or processing with a relatively low security level. When an icon that does not undergo fingerprint authentication is touched, the processing associated with that icon is executed regardless of the fingerprint of the touching finger.

[0069] [Variations] Although the above example shows that display unit 13 has a function of detecting a touch operation, the present invention is not limited to this. As shown in FIG. 9, electronic device 10A may have detection unit 14 having a function of detecting a touch operation in addition to display unit 13.

[0070] The display unit 13 has a function of displaying an image and a function of acquiring fingerprint information. Specifically, the display unit 13 has a function of displaying an icon and acquiring fingerprint information in the display area of ​​the icon. The detection unit 14 has a function of detecting a touch operation. A capacitance type touch sensor or the like can be used as the detection unit 14.

[0071] This embodiment mode can be combined with other embodiment modes as appropriate. In addition, in this specification, when a plurality of configuration examples are shown in one embodiment mode, the configuration examples can be combined as appropriate.

[0072] (Embodiment 2) In this embodiment, a display device according to one embodiment of the present invention will be described with reference to FIGS.

[0073] The display device of this embodiment can be suitably used for the display portion of the electronic devices described in Embodiment 1.

[0074] A display portion of a display device according to one embodiment of the present invention has a function of displaying an image using a light-emitting element (also referred to as a light-emitting device), and further has one or both of an imaging function and a sensing function.

[0075] A display device of one embodiment of the present invention includes a light-receiving element (also referred to as a light-receiving device) and a light-emitting element. Alternatively, a display device of one embodiment of the present invention includes a light-receiving and light-emitting element (also referred to as a light-emitting and receiving device) and a light-emitting element.

[0076] First, a display device having a light receiving element and a light emitting element will be described.

[0077] A display device according to one embodiment of the present invention includes a light-receiving element and a light-emitting element in a display portion. In the display device according to one embodiment of the present invention, the light-emitting elements are arranged in a matrix in the display portion, and an image can be displayed on the display portion. The light-receiving elements are arranged in a matrix in the display portion, and the display portion has one or both of an imaging function and a sensing function. The display portion can be used as an image sensor or a touch sensor. That is, by detecting light in the display portion, an image can be captured or a touch operation of an object (such as a finger or a pen) can be detected. Furthermore, in the display device according to one embodiment of the present invention, the light-emitting element can be used as a light source for the sensor. Therefore, a light-receiving portion and a light source are not required separately from the display device, and the number of components in an electronic device can be reduced.

[0078] In the display device of one embodiment of the present invention, when light emitted from a light-emitting element included in a display portion is reflected (or scattered) by an object, the light-receiving element can detect the reflected light (or scattered light); therefore, imaging and detection of touch operations are possible even in a dark place.

[0079] A display device according to one embodiment of the present invention has a function of displaying an image using a light-emitting element, that is, the light-emitting element functions as a display element (also referred to as a display device).

[0080] As the light-emitting element, it is preferable to use an EL element (also called an EL device) such as an OLED (Organic Light Emitting Diode) or a QLED (Quantum-dot Light Emitting Diode). Examples of light-emitting materials that EL elements have include fluorescent materials, phosphorescent materials, inorganic compounds (such as quantum dot materials), and materials that exhibit thermally activated delayed fluorescence (thermally activated delayed fluorescence (TADF) materials). Alternatively, LEDs such as micro LEDs (Light Emitting Diodes) can be used as the light-emitting element.

[0081] A display device according to one embodiment of the present invention has a function of detecting light using a light-receiving element.

[0082] When the light receiving element is used as an image sensor, the display device can capture an image using the light receiving element. For example, the display device of the present embodiment can be used as a scanner.

[0083] For example, an image sensor can be used to acquire data related to biometric information such as fingerprints and palm prints. That is, a biometric authentication sensor can be built into the display device. By building a biometric authentication sensor into the display device, the number of components in the electronic device can be reduced compared to when a biometric authentication sensor is provided separately from the display device, and the electronic device can be made smaller and lighter.

[0084] Furthermore, when the light receiving element is used as a touch sensor, the display device can detect a touch action of an object using the light receiving element.

[0085] The light receiving element can be, for example, a pn-type or pin-type photodiode. The light receiving element functions as a photoelectric conversion element (also called a photoelectric conversion device) that detects light incident on the light receiving element and generates electric charge. The amount of electric charge generated by the light receiving element is determined based on the amount of light incident on the light receiving element.

[0086] In particular, it is preferable to use an organic photodiode having a layer containing an organic compound as the light-receiving element. Organic photodiodes can be easily made thin, lightweight, and large in area, and have a high degree of freedom in shape and design, making them applicable to a variety of display devices.

[0087] In one embodiment of the present invention, an organic EL element (also referred to as an organic EL device) is used as a light-emitting element, and an organic photodiode is used as a light-receiving element. The organic EL element and the organic photodiode can be formed on the same substrate. Therefore, the organic photodiode can be built into a display device using the organic EL element.

[0088] Separately fabricating all the layers that make up an organic EL element and an organic photodiode requires an extremely large number of film-forming processes. However, since organic photodiodes have many layers that can be configured in common with organic EL elements, the number of film-forming processes can be reduced by forming the layers that can be configured in common at the same time.

[0089] For example, one of the pair of electrodes (common electrode) can be a layer common to the light-receiving element and the light-emitting element. It is also preferable that at least one of the hole injection layer, hole transport layer, electron transport layer, and electron injection layer be a layer common to the light-receiving element and the light-emitting element. Furthermore, the light-receiving element and the light-emitting element can have the same configuration, except that the light-receiving element has an active layer and the light-emitting element has an emitting layer. That is, a light-receiving element can be fabricated simply by replacing the emitting layer of the light-emitting element with an active layer. By having a common layer between the light-receiving element and the light-emitting element, the number of film formations and the number of masks can be reduced, thereby reducing the manufacturing process and manufacturing costs of the display device. Furthermore, a display device having a light-receiving element can be fabricated using existing display device manufacturing equipment and manufacturing methods.

[0090] Note that the layer shared by the light-receiving element and the light-emitting element may have different functions in the light-emitting element and the light-receiving element. In this specification, components are named based on their functions in the light-emitting element. For example, a hole injection layer functions as a hole injection layer in the light-emitting element and functions as a hole transport layer in the light-receiving element. Similarly, an electron injection layer functions as an electron injection layer in the light-emitting element and functions as an electron transport layer in the light-receiving element. Furthermore, the layer shared by the light-receiving element and the light-emitting element may have the same function in the light-emitting element and the light-receiving element. The hole transport layer functions as a hole transport layer in both the light-emitting element and the light-receiving element, and the electron transport layer functions as an electron transport layer in both the light-emitting element and the light-receiving element.

[0091] Next, a display device having light emitting and receiving elements and a light emitting element will be described.

[0092] In a display device according to one embodiment of the present invention, a subpixel that exhibits one of the colors has a light-emitting / receiving element instead of a light-emitting element, and a subpixel that exhibits the other color has a light-emitting element. The light-emitting / receiving element has both a function of emitting light (light-emitting function) and a function of receiving light (light-receiving function). For example, when a pixel has three subpixels, namely, a red subpixel, a green subpixel, and a blue subpixel, at least one subpixel has a light-emitting / receiving element, and the other subpixels have light-emitting elements. Therefore, the display portion of the display device according to one embodiment of the present invention has a function of displaying an image using both the light-emitting / receiving element and the light-emitting element.

[0093] Since the light-receiving / light-emitting element serves as both a light-emitting element and a light-receiving element, a pixel can be given a light-receiving function without increasing the number of subpixels included in the pixel. This allows one or both of an imaging function and a sensing function to be added to the display portion of the display device while maintaining the aperture ratio of the pixel (aperture ratio of each subpixel) and the resolution of the display device. Therefore, the display device of one embodiment of the present invention can have a higher aperture ratio of the pixel and can easily achieve higher resolution than a display device in which a subpixel having a light-receiving element is provided separately from a subpixel having a light-emitting element.

[0094] In a display device according to one embodiment of the present invention, light-emitting and receiving elements and light-emitting elements are arranged in a matrix in a display portion, and an image can be displayed on the display portion. The display portion can be used as an image sensor or a touch sensor. In the display device according to one embodiment of the present invention, the light-emitting elements can be used as a light source for the sensor. Therefore, a light-receiving portion and a light source do not need to be provided separately from the display device, and the number of components in an electronic device can be reduced.

[0095] In the display device of one embodiment of the present invention, when light emitted from a light-emitting element included in a display portion is reflected (or scattered) by an object, the light-receiving and light-emitting element can detect the reflected light (or scattered light). This makes it possible to capture images or detect touch operations even in dark places.

[0096] Light-emitting and receiving elements can be fabricated by combining an organic EL element and an organic photodiode. For example, light-emitting and receiving elements can be fabricated by adding the active layer of an organic photodiode to the layered structure of an organic EL element. Furthermore, light-emitting and receiving elements fabricated by combining an organic EL element and an organic photodiode can suppress an increase in the number of film-forming steps by forming layers that can be configured in common with the organic EL element in a single step.

[0097] For example, one of the pair of electrodes (common electrode) can be a layer common to the light-emitting and receiving elements and the light-emitting element. It is also preferable that at least one of the hole injection layer, hole transport layer, electron transport layer, and electron injection layer be a layer common to the light-emitting and receiving elements and the light-emitting element. Furthermore, the light-emitting and receiving elements and the light-emitting element can have the same configuration, except for the presence or absence of an active layer of the light-receiving element. In other words, the light-emitting and receiving elements can be fabricated simply by adding the active layer of the light-receiving element to the light-emitting element. Having a common layer between the light-emitting and receiving elements and the light-emitting element in this way can reduce the number of film formations and masks, thereby reducing the manufacturing process and manufacturing costs of the display device. Furthermore, a display device having a light-emitting and receiving element can be fabricated using existing display device manufacturing equipment and manufacturing methods.

[0098] The layers of the light-emitting / receiving element may have different functions when the light-emitting / receiving element functions as a light-receiving element and when it functions as a light-emitting element. In this specification, components are named based on their functions when the light-emitting / receiving element functions as a light-emitting element. For example, the hole injection layer functions as a hole injection layer when the light-emitting / receiving element functions as a light-emitting element, and functions as a hole transport layer when the light-emitting / receiving element functions as a light-receiving element. Similarly, the electron injection layer functions as an electron injection layer when the light-emitting / receiving element functions as a light-emitting element, and functions as an electron transport layer when the light-emitting / receiving element functions as a light-receiving element. Furthermore, the layers of the light-emitting / receiving element may have the same functions when the light-emitting / receiving element functions as a light-receiving element and when it functions as a light-emitting element. The hole transport layer functions as a hole transport layer when the light-emitting / receiving element functions as both a light-emitting element and a light-receiving element, and the electron transport layer functions as an electron transport layer when the light-emitting / receiving element functions as both a light-emitting element and a light-receiving element.

[0099] The display device of this embodiment mode has a function of displaying an image using a light-emitting element and a light-emitting / light-emitting element. That is, the light-emitting element and the light-emitting / light-emitting element function as display elements.

[0100] The display device of this embodiment has a function of detecting light using a light receiving and emitting element, which can detect light having a shorter wavelength than light emitted by the light receiving and emitting element itself.

[0101] When the light emitting / receiving elements are used in an image sensor, the display device of this embodiment can capture an image using the light emitting / receiving elements. For example, the display device of this embodiment can be used as a scanner.

[0102] Furthermore, when the light emitting and receiving elements are used as a touch sensor, the display device of this embodiment can detect a touch action of an object using the light emitting and receiving elements.

[0103] The light emitting / receiving element functions as a photoelectric conversion element that detects light incident on the light emitting / receiving element and generates electric charges. The amount of electric charges generated by the light emitting / receiving element is determined based on the amount of light incident on the light emitting / receiving element.

[0104] The light emitting / receiving element can be fabricated by adding an active layer of a light receiving element to the above-described light emitting element configuration.

[0105] The light emitting / receiving element may have, for example, a pn-type or pin-type photodiode structure.

[0106] In particular, it is preferable to use an organic photodiode active layer having a layer containing an organic compound as the light-receiving / light-emitting element. Organic photodiodes can be easily made thin, lightweight, and large in area, and have a high degree of freedom in shape and design, making them applicable to a variety of display devices.

[0107] The display device of one embodiment of the present invention will be described in more detail below with reference to the drawings.

[0108] [Display device] 10A to 10D and 10F each show a cross-sectional view of a display device according to one embodiment of the present invention.

[0109] A display device 200A shown in FIG. 10A includes, between a substrate 201 and a substrate 209, a layer 203 having a light receiving element, a functional layer 205, and a layer 207 having a light emitting element.

[0110] The display device 200A is configured such that red (R), green (G), and blue (B) light is emitted from a layer 207 having light-emitting elements.

[0111] The light receiving elements included in the layer 203 having light receiving elements can detect light incident from outside the display device 200A.

[0112] A display device 200B shown in FIG. 10B includes, between a substrate 201 and a substrate 209, a layer 204 having light emitting / receiving elements, a functional layer 205, and a layer 207 having light emitting elements.

[0113] The display device 200B has a configuration in which green (G) light and blue (B) light are emitted from the layer 207 having the light-emitting elements, and red (R) light is emitted from the layer 204 having the light-emitting and light-emitting elements. Note that in the display device of one embodiment of the present invention, the color of light emitted from the layer 204 having the light-emitting and light-emitting elements is not limited to red. Furthermore, the color of light emitted from the layer 207 having the light-emitting elements is not limited to a combination of green and blue.

[0114] The light emitting / receiving elements included in the layer 204 having the light emitting / receiving elements can detect light incident from outside the display device 200B. The light emitting / receiving elements can detect, for example, one or both of green (G) light and blue (B) light.

[0115] The functional layer 205 has a circuit for driving the light receiving element or the light emitting / receiving element, and a circuit for driving the light emitting element. The functional layer 205 may be provided with switches, transistors, capacitors, resistors, wiring, terminals, etc. Note that when the light emitting element and the light receiving element are driven by a passive matrix method, a configuration without switches or transistors may be used.

[0116] The display device of one embodiment of the present invention may have a function of detecting an object, such as a finger, touching the display device (a function as a touch panel). For example, as shown in FIG. 10C , light emitted by a light-emitting element in the layer 207 having light-emitting elements is reflected by a finger 202 touching the display device 200A, and the light-receiving element in the layer 203 having light-receiving elements detects the reflected light. This makes it possible to detect that the finger 202 has touched the display device 200A. In addition, in the display device 200B, light emitted by a light-emitting element in the layer 207 having light-emitting elements is reflected by a finger touching the display device 200B, and the reflected light can be detected by a light-receiving / light-emitting element in the layer 204 having light-receiving / light-emitting elements. Note that, although a case where light emitted from a light-emitting element is reflected by an object will be described below as an example, light may also be scattered by the object.

[0117] The display device according to one embodiment of the present invention may have a function of detecting or capturing an image of an object that is close to (not in contact with) the display device, as shown in FIG. 10D.

[0118] The display device according to one embodiment of the present invention may have a function of detecting a fingerprint of a finger 202. Fig. 10E shows an image captured by the display device according to one embodiment of the present invention. In Fig. 10E, the outline of the finger 202 is indicated by a dashed line within an imaging range 263, and the outline of the contact portion 261 is indicated by a dashed line. Within the contact portion 261, a high-contrast image of the fingerprint 262 can be captured due to differences in the amount of light incident on the light receiving element (or light receiving / emitting element).

[0119] The display device of one embodiment of the present invention can also function as a pen tablet. Figure 10F shows a state in which the tip of a stylus 208 is in contact with a substrate 209 and is slid in the direction of the dashed arrow.

[0120] As shown in Figure 10F, scattered light scattered between the tip of stylus 208 and the contact surface of substrate 209 is incident on a light receiving element (or light receiving / emitting element) located at the part overlapping with the contact surface, thereby enabling the position of the tip of stylus 208 to be detected with high accuracy.

[0121] 10G shows an example of a trajectory 266 of the stylus 208 detected by the display device of one embodiment of the present invention. The display device of one embodiment of the present invention can detect the position of a detectable object such as the stylus 208 with high positional accuracy, and therefore can perform high-resolution drawing in a drawing application or the like. Furthermore, unlike the case where a capacitive touch sensor or an electromagnetic induction touch pen is used, the display device can detect the position of even a highly insulating detectable object. Therefore, the material of the tip of the stylus 208 is not limited, and various writing implements (for example, a brush, a glass pen, a feather pen, etc.) can be used.

[0122] [Pixels] A display device according to one embodiment of the present invention includes a plurality of pixels arranged in a matrix, each of which includes a plurality of sub-pixels, each of which includes one light-emitting element, one light-receiving element, or one light-receiving element.

[0123] Each of the plurality of pixels has one or more of a sub-pixel having a light-emitting element, a sub-pixel having a light-receiving element, and a sub-pixel having a light-receiving / light-emitting element.

[0124] For example, a pixel has a plurality of sub-pixels (for example, three or four) that have a light-emitting element, and one sub-pixel that has a light-receiving element.

[0125] The light receiving element may be provided in all pixels or in some pixels. Also, one pixel may have multiple light receiving elements. Also, one light receiving element may be provided across multiple pixels. The resolution of the light receiving element and the resolution of the light emitting element may be different from each other.

[0126] When a pixel has three subpixels each having a light-emitting element, the three subpixels may be subpixels of three colors, R, G, and B, or subpixels of three colors, yellow (Y), cyan (C), and magenta (M), etc. When a pixel has four subpixels each having a light-emitting element, the four subpixels may be subpixels of four colors, R, G, B, and white (W), or subpixels of four colors, R, G, B, and Y, etc.

[0127] 10H, 10J, 10K, and 10L show examples of a pixel having a plurality of subpixels each having a light-emitting element and one subpixel each having a light-receiving element. Note that the arrangement of the subpixels shown in this embodiment is not limited to the order shown in the drawings. For example, the positions of the subpixel (B) and the subpixel (G) may be reversed.

[0128] Each of the pixels shown in Figures 10H, 10J, and 10K has a sub-pixel (PD) with a light-receiving function, a sub-pixel (R) that emits red light, a sub-pixel (G) that emits green light, and a sub-pixel (B) that emits blue light.

[0129] The pixel shown in Fig. 10H has a matrix arrangement, and the pixel shown in Fig. 10J has a stripe arrangement. Fig. 10K shows an example in which a subpixel (R) that emits red light, a subpixel (G) that emits green light, and a subpixel (B) that emits blue light are arranged in a single horizontal column, with a subpixel (PD) having a light-receiving function arranged below them. That is, in Fig. 10K, the subpixels (R), (G), and (B) are arranged in the same row, but in a different row from the subpixel (PD).

[0130] The pixel shown in FIG. 10L has the same configuration as the pixel shown in FIG. 10K, but also has a subpixel (X) that emits light other than R, G, and B. Examples of light other than R, G, and B include white (W), yellow (Y), cyan (C), magenta (M), and infrared light (IR). When the subpixel (X) emits infrared light, the subpixel (PD) having a light-receiving function preferably has a function to detect infrared light. The subpixel (PD) having a light-receiving function may have a function to detect both visible light and infrared light. The wavelength of light detected by the light-receiving element can be determined depending on the application of the sensor.

[0131] Alternatively, for example, a pixel has a plurality of sub-pixels each having a light-emitting element, and one sub-pixel each having a light-receiving or light-emitting element.

[0132] A display device having light-receiving and light-emitting elements does not require changing the pixel arrangement to incorporate a light-receiving function into the pixel, so it is possible to add an imaging function and / or a sensing function to the display section without reducing the aperture ratio and definition.

[0133] The light emitting / receiving elements may be provided in all pixels or in some pixels, and one pixel may have a plurality of light emitting / receiving elements.

[0134] 11A to 11D show an example of a pixel having a plurality of sub-pixels each having a light-emitting element and one sub-pixel each having a light-receiving or light-emitting element.

[0135] 11A is a stripe array pixel having a subpixel (R·PD) that emits red light and has a light-receiving function, a subpixel (G) that emits green light, and a subpixel (B) that emits blue light. In a display device in which a pixel is made up of three subpixels, R, G, and B, by replacing the light-emitting element used in the R subpixel with a light-receiving / light-emitting element, a display device in which the pixel has a light-receiving function can be fabricated.

[0136] The pixel shown in FIG. 11B has a subpixel (R·PD) that emits red light and has a light-receiving function, a subpixel (G) that emits green light, and a subpixel (B) that emits blue light. The subpixel (R·PD) is arranged in a different column from the subpixels (G) and (B). The subpixels (G) and (B) are arranged alternately in the same column, with one being arranged in an odd-numbered row and the other being arranged in an even-numbered row. Note that the subpixel arranged in a column different from the subpixels of other colors is not limited to red (R) and may be green (G) or blue (B).

[0137] 11C is arranged in a matrix and has a subpixel (R·PD) that emits red light and has a light-receiving function, a subpixel (G) that emits green light, a subpixel (B) that emits blue light, and a subpixel (X) that emits light other than R, G, and B. Even in a display device in which a pixel is composed of four subpixels, R, G, B, and X, it is possible to fabricate a display device in which the pixel has a light-receiving function by replacing the light-emitting element used in the R subpixel with a light-receiving / light-emitting element.

[0138] FIG. 11D shows two pixels, each consisting of three subpixels surrounded by dotted lines. The pixel shown in FIG. 11D has a subpixel (R·PD) that emits red light and has a light-receiving function, a subpixel (G) that emits green light, and a subpixel (B) that emits blue light. In the left pixel shown in FIG. 11D, the subpixel (G) is arranged in the same row as the subpixel (R·PD), and the subpixel (B) is arranged in the same column as the subpixel (R·PD). In the right pixel shown in FIG. 11D, the subpixel (G) is arranged in the same row as the subpixel (R·PD), and the subpixel (B) is arranged in the same column as the subpixel (G). In the pixel layout shown in FIG. 11D, the subpixels (R·PD), subpixels (G), and subpixels (B) are arranged repeatedly in both odd and even rows, and in each column, subpixels of different colors are arranged in the odd and even rows.

[0139] Fig. 11E shows four pixels in a Pentile arrangement, with two adjacent pixels having subpixels that emit two different colors of light. The shapes of the subpixels shown in Fig. 11E represent the top surface shapes of the light-emitting or light-receiving elements of the subpixels. Fig. 11F shows a modified example of the pixel arrangement shown in Fig. 11E.

[0140] The upper left pixel and the lower right pixel shown in Fig. 11E have a subpixel (R·PD) that emits red light and has a light-receiving function, and a subpixel (G) that emits green light. The lower left pixel and the upper right pixel shown in Fig. 11E have a subpixel (G) that emits green light and a subpixel (B) that emits blue light.

[0141] The upper left pixel and the lower right pixel shown in Figure 11F have a sub-pixel (R·PD) that emits red light and has a light-receiving function, and a sub-pixel (G) that emits green light. The lower left pixel and the upper right pixel shown in Figure 11F have a sub-pixel (R·PD) that emits red light and has a light-receiving function, and a sub-pixel (B) that emits blue light.

[0142] In FIG. 11E, each pixel is provided with a sub-pixel (G) that emits green light. On the other hand, in FIG. 11F, each pixel is provided with a sub-pixel (R·PD) that emits red light and has a light-receiving function. Because each pixel is provided with a sub-pixel that has a light-receiving function, the configuration shown in FIG. 11F can capture images with higher resolution than the configuration shown in FIG. 11E. This can improve the accuracy of biometric authentication, for example.

[0143] Furthermore, the top surface shapes of the light-emitting element and light-receiving / light-emitting element are not particularly limited and may be circular, elliptical, polygonal, polygonal with rounded corners, etc. Fig. 11E shows an example of a circular top surface shape of the light-emitting element of the sub-pixel (G), and Fig. 11F shows an example of a square top surface shape. The top surface shapes of the light-emitting element and light-receiving / light-emitting element for each color may be different from each other, or may be the same for some or all of the colors.

[0144] The aperture ratios of the subpixels of each color may be different from each other, or may be the same for some or all of the colors. For example, the aperture ratio of the subpixels (subpixel (G) in FIG. 11E and subpixel (R·PD) in FIG. 11F) provided in each pixel may be smaller than the aperture ratios of the subpixels of other colors.

[0145] Fig. 11G is a modified example of the pixel array shown in Fig. 11F. Specifically, the configuration in Fig. 11G is obtained by rotating the configuration in Fig. 11F by 45°. In Fig. 11F, it has been described that one pixel is made up of two subpixels, but as shown in Fig. 11G, it can also be considered that one pixel is made up of four subpixels.

[0146] In FIG. 11G, the explanation will be given assuming that one pixel is composed of four subpixels surrounded by dotted lines. One pixel has two subpixels (R·PD), one subpixel (G), and one subpixel (B). In this way, one pixel has multiple subpixels with light-receiving functions, allowing for high-resolution imaging. This can improve the accuracy of biometric authentication. For example, the imaging resolution can be set to the root double of the display resolution.

[0147] A display device to which the configuration shown in Figure 11F or 11G is applied has p (p is an integer of 2 or more) first light-emitting elements, q (q is an integer of 2 or more) second light-emitting elements, and r (r is an integer greater than p and greater than q) light-receiving and light-emitting elements. p and r satisfy r = 2p. Furthermore, p, q, and r satisfy r = p + q. One of the first light-emitting elements and the second light-emitting element emits green light, and the other emits blue light. The light-receiving and light-emitting element emits red light and has a light-receiving function.

[0148] For example, when detecting a touch operation using a light-emitting / receiving element, it is preferable that the light emitted from the light source is less visible to the user. Because blue light is less visible than green light, it is preferable that a light-emitting element that emits blue light be used as the light source. Therefore, it is preferable that the light-emitting / receiving element has a function of receiving blue light.

[0149] As described above, pixels with various arrangements can be applied to the display device of this embodiment mode.

[0150] [Device Structure] Next, detailed structures of a light-emitting element, a light-receiving element, and a light-emitting and light-emitting element that can be used in the display device of one embodiment of the present invention will be described.

[0151] The display device of one embodiment of the present invention may be any of a top emission type that emits light in a direction opposite to a substrate on which a light-emitting element is formed, a bottom emission type that emits light toward a substrate on which a light-emitting element is formed, and a dual emission type that emits light to both sides.

[0152] In this embodiment, a top-emission display device will be described as an example.

[0153] In this specification, unless otherwise specified, even when describing a configuration having a plurality of elements (light-emitting elements, light-emitting layers, etc.), when describing matters common to each element, the alphabet will be omitted. For example, when describing matters common to light-emitting layer 283R and light-emitting layer 283G, etc., they may be referred to as light-emitting layer 283.

[0154] A display device 280A shown in FIG. 12A has a light receiving element 270PD, a light emitting element 270R that emits red (R) light, a light emitting element 270G that emits green (G) light, and a light emitting element 270B that emits blue (B) light.

[0155] Each light-emitting element has a pixel electrode 271, a hole injection layer 281, a hole transport layer 282, a light-emitting layer, an electron transport layer 284, an electron injection layer 285, and a common electrode 275 stacked in this order. Light-emitting element 270R has a light-emitting layer 283R, light-emitting element 270G has a light-emitting layer 283G, and light-emitting element 270B has a light-emitting layer 283B. Light-emitting layer 283R contains a light-emitting material that emits red light, light-emitting layer 283G contains a light-emitting material that emits green light, and light-emitting layer 283B contains a light-emitting material that emits blue light.

[0156] The light emitting element is an electroluminescent element that emits light toward the common electrode 275 when a voltage is applied between the pixel electrode 271 and the common electrode 275 .

[0157] The light receiving element 270PD has a pixel electrode 271, a hole injection layer 281, a hole transport layer 282, an active layer 273, an electron transport layer 284, an electron injection layer 285, and a common electrode 275 stacked in this order.

[0158] The light receiving element 270PD is a photoelectric conversion element that receives light incident from outside the display device 280A and converts it into an electrical signal.

[0159] In this embodiment, in both the light-emitting element and the light-receiving element, the pixel electrode 271 functions as an anode, and the common electrode 275 functions as a cathode. In other words, by applying a reverse bias between the pixel electrode 271 and the common electrode 275 and driving the light-receiving element, the light incident on the light-receiving element can be detected, an electric charge can be generated, and the electric charge can be extracted as a current.

[0160] In the display device of this embodiment, an organic compound is used for the active layer 273 of the light-receiving element 270PD. The layers of the light-receiving element 270PD other than the active layer 273 can be configured in common with the light-emitting element. Therefore, by simply adding a step of forming the active layer 273 to the manufacturing process of the light-emitting element, the light-receiving element 270PD can be formed in parallel with the formation of the light-emitting element. Furthermore, the light-emitting element and the light-receiving element 270PD can be formed on the same substrate. Therefore, the light-receiving element 270PD can be incorporated into the display device without significantly increasing the number of manufacturing steps.

[0161] The display device 280A shows an example in which the light receiving element 270PD and the light emitting element have a common configuration, except that the active layer 273 of the light receiving element 270PD and the light emitting layer 283 of the light emitting element are fabricated separately. However, the configuration of the light receiving element 270PD and the light emitting element is not limited to this. The light receiving element 270PD and the light emitting element may have layers fabricated separately from each other, in addition to the active layer 273 and the light emitting layer 283. It is preferable that the light receiving element 270PD and the light emitting element have one or more layers used in common (common layers). This allows the light receiving element 270PD to be incorporated into the display device without significantly increasing the number of manufacturing steps.

[0162] A conductive film that transmits visible light is used for the electrode from which light is extracted, between the pixel electrode 271 and the common electrode 275. It is preferable to use a conductive film that reflects visible light for the electrode from which light is not extracted.

[0163] The light-emitting element included in the display device of this embodiment preferably has a micro-optical resonator (microcavity) structure. Therefore, one of a pair of electrodes included in the light-emitting element preferably has an electrode that is transparent and reflective to visible light (semi-transmissive / semi-reflective electrode), and the other preferably has an electrode that is reflective to visible light (reflective electrode). When the light-emitting element has a microcavity structure, light emitted from the light-emitting layer can be resonated between both electrodes, thereby intensifying the light emitted from the light-emitting element.

[0164] The semi-transmitting / semi-reflective electrode can have a laminated structure of a reflective electrode and an electrode that is transparent to visible light (also called a transparent electrode).

[0165] The light transmittance of the transparent electrode is 40% or more. For example, it is preferable to use an electrode with a visible light (light with a wavelength of 400 nm or more and less than 750 nm) transmittance of 40% or more for the light emitting element. The visible light reflectance of the semi-transmissive / semi-reflective electrode is 10% or more and 95% or less, preferably 30% or more and 80% or less. The visible light reflectance of the reflective electrode is 40% or more and 100% or less, preferably 70% or more and 100% or less. In addition, the resistivity of these electrodes is 1×10 -2 When the light-emitting element emits near-infrared light (light with a wavelength of 750 nm or more and 1300 nm or less), the transmittance or reflectance of these electrodes for near-infrared light preferably satisfies the above-mentioned numerical range, similar to the transmittance or reflectance for visible light.

[0166] The light-emitting element has at least the light-emitting layer 283. The light-emitting element may further have, in addition to the light-emitting layer 283, a layer containing a substance having a high hole-injecting property, a substance having a high hole-transporting property, a hole-blocking material, a substance having a high electron-transporting property, a substance having a high electron-injecting property, a bipolar substance (a substance having a high electron-transporting property and a high hole-transporting property), or the like.

[0167] For example, the light-emitting element and the light-receiving element may have one or more layers of the hole injection layer, hole transport layer, electron transport layer, and electron injection layer in common, or the light-emitting element and the light-receiving element may have one or more layers of the hole injection layer, hole transport layer, electron transport layer, and electron injection layer formed differently from each other.

[0168] The hole injection layer is a layer that injects holes from the anode into the hole transport layer and contains a material with high hole injection properties, such as an aromatic amine compound or a composite material containing a hole transport material and an acceptor material (electron acceptor material).

[0169] In a light-emitting element, the hole transport layer is a layer that transports holes injected from the anode by the hole injection layer to the light-emitting layer. In a light-receiving element, the hole transport layer is a layer that transports holes generated in the active layer based on incident light to the anode. The hole transport layer is a layer that contains a hole transport material. Examples of the hole transport material include 10 -6 cm 2 A material having a hole mobility of 1 / Vs or more is preferred. Note that other materials can also be used as long as they have a higher hole transporting property than electron transporting property. As the hole transporting material, a material having a high hole transporting property, such as a π-electron-rich heteroaromatic compound (e.g., a carbazole derivative, a thiophene derivative, a furan derivative, etc.) or an aromatic amine (a compound having an aromatic amine skeleton), is preferred.

[0170] In a light-emitting element, the electron transport layer is a layer that transports electrons injected from the cathode by the electron injection layer to the light-emitting layer. In a light-receiving element, the electron transport layer is a layer that transports electrons generated in the active layer based on incident light to the cathode. The electron transport layer is a layer that contains an electron transporting material. The electron transporting material is a material having a 1×10 -6 cm 2A substance having an electron mobility of 1 / Vs or more is preferred. Note that other substances can also be used as long as they have a higher electron transporting property than holes. Examples of electron-transporting materials that can be used include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, and metal complexes having a thiazole skeleton, as well as oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives having a quinoline ligand, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, and π-electron-deficient heteroaromatic compounds including nitrogen-containing heteroaromatic compounds.

[0171] The electron injection layer is a layer that injects electrons from the cathode to the electron transport layer and contains a material with high electron injection properties. Examples of the material with high electron injection properties include alkali metals, alkaline earth metals, and compounds thereof. Examples of the material with high electron injection properties include a composite material containing an electron transport material and a donor material (electron donor material).

[0172] The light-emitting layer 283 is a layer containing a light-emitting substance. The light-emitting layer 283 can have one or more types of light-emitting substances. As the light-emitting substance, a substance that emits light of a color such as blue, purple, blue-purple, green, yellow-green, yellow, orange, or red is appropriately used. Furthermore, as the light-emitting substance, a substance that emits near-infrared light can also be used.

[0173] Examples of light-emitting materials include fluorescent materials, phosphorescent materials, TADF materials, and quantum dot materials.

[0174] Examples of fluorescent materials include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, and naphthalene derivatives.

[0175] Examples of phosphorescent materials include organometallic complexes (particularly iridium complexes) having a 4H-triazole skeleton, a 1H-triazole skeleton, an imidazole skeleton, a pyrimidine skeleton, a pyrazine skeleton, or a pyridine skeleton; organometallic complexes (particularly iridium complexes) having a phenylpyridine derivative having an electron-withdrawing group as a ligand; platinum complexes; and rare earth metal complexes.

[0176] The light-emitting layer 283 may contain one or more organic compounds (host materials, assist materials, etc.) in addition to a light-emitting substance (guest material). As the one or more organic compounds, one or both of a hole-transporting material and an electron-transporting material can be used. Furthermore, as the one or more organic compounds, a bipolar material or a TADF material can be used.

[0177] The light-emitting layer 283 preferably includes, for example, a phosphorescent material and a hole-transporting material and an electron-transporting material that are a combination that easily forms an exciplex. This structure allows efficient emission using Exciplex-Triplet Energy Transfer (ExTET), which is energy transfer from an exciplex to a light-emitting substance (phosphorescent material). By selecting a combination that forms an exciplex that emits light that overlaps with the wavelength of the lowest-energy absorption band of the light-emitting substance, the energy transfer becomes smooth and light emission can be achieved efficiently. This structure simultaneously enables high efficiency, low-voltage operation, and long life of the light-emitting element.

[0178] As a combination of materials that form an exciplex, it is preferable that the HOMO level (highest occupied molecular orbital level) of the hole-transporting material is equal to or higher than the HOMO level of the electron-transporting material. It is also preferable that the LUMO level (lowest unoccupied molecular orbital level) of the hole-transporting material is equal to or higher than the LUMO level of the electron-transporting material. The LUMO level and HOMO level of the material can be derived from the electrochemical properties (reduction potential and oxidation potential) of the material measured by cyclic voltammetry (CV).

[0179] The formation of exciplexes can be confirmed, for example, by comparing the emission spectra of the hole-transporting material, the electron-transporting material, and the mixed film of these materials and observing the phenomenon that the emission spectrum of the mixed film is shifted to longer wavelengths than the emission spectra of each material (or has a new peak at longer wavelengths). Alternatively, it can be confirmed by comparing the transient photoluminescence (PL) of the hole-transporting material, the transient PL of the electron-transporting material, and the mixed film of these materials and observing differences in transient response, such as the transient PL lifetime of the mixed film having a longer-lived component or a larger proportion of delayed components than the transient PL lifetimes of the individual materials. The above-mentioned transient PL can also be interpreted as transient electroluminescence (EL). In other words, the formation of exciplexes can also be confirmed by comparing the transient EL of the hole-transporting material, the transient EL of the electron-transporting material, and the mixed film of these materials and observing differences in transient response.

[0180] The active layer 273 includes a semiconductor. Examples of the semiconductor include inorganic semiconductors such as silicon and organic semiconductors including organic compounds. In this embodiment, an example in which an organic semiconductor is used as the semiconductor included in the active layer 273 is shown. By using an organic semiconductor, the light-emitting layer 283 and the active layer 273 can be formed by the same method (for example, vacuum deposition), which is preferable because it allows the use of a common manufacturing device.

[0181] The active layer 273 has an n-type semiconductor material, such as fullerene (e.g., C 60 , C 70Examples of electron-accepting organic semiconductor materials include fullerene derivatives and other fullerenes. Fullerenes have a soccer ball-like shape, which is energetically stable. Fullerenes have deep (low) HOMO and LUMO levels. Because fullerenes have a deep LUMO level, they have extremely high electron-accepting (acceptor) properties. Normally, when the π-electron conjugation (resonance) spreads on a plane, as in benzene, the electron-donating (donor) properties increase, but fullerenes have a spherical shape, so they have high electron-accepting properties despite the large spread of π-electrons. High electron-accepting properties allow charge separation to occur quickly and efficiently, making them useful as light-receiving elements. C 60 , C 70 Both have a wide absorption band in the visible light region, especially C 70 is C 60 It is preferred because it has a larger π-electron conjugated system and a wide absorption band in the long wavelength region compared to the above.

[0182] Furthermore, examples of n-type semiconductor materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, naphthalene derivatives, anthracene derivatives, coumarin derivatives, rhodamine derivatives, triazine derivatives, and quinone derivatives.

[0183] Examples of the p-type semiconductor material of the active layer 273 include electron-donating organic semiconductor materials such as copper(II) phthalocyanine (CuPc), tetraphenyldibenzoperiflanthene (DBP), zinc phthalocyanine (ZnPc), tin phthalocyanine (SnPc), and quinacridone.

[0184] Examples of p-type semiconductor materials include carbazole derivatives, thiophene derivatives, furan derivatives, compounds having an aromatic amine skeleton, etc. Examples of p-type semiconductor materials include naphthalene derivatives, anthracene derivatives, pyrene derivatives, triphenylene derivatives, fluorene derivatives, pyrrole derivatives, benzofuran derivatives, benzothiophene derivatives, indole derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, indolocarbazole derivatives, porphyrin derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, quinacridone derivatives, polyphenylenevinylene derivatives, polyparaphenylene derivatives, polyfluorene derivatives, polyvinylcarbazole derivatives, polythiophene derivatives, etc.

[0185] The HOMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the HOMO level of the electron-accepting organic semiconductor material, and the LUMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the LUMO level of the electron-accepting organic semiconductor material.

[0186] It is preferable to use a spherical fullerene as the electron-accepting organic semiconductor material and a planar organic semiconductor material as the electron-donating organic semiconductor material. Molecules with similar shapes tend to aggregate together, and when molecules of the same type aggregate, the energy levels of their molecular orbitals become close, which can improve carrier transport properties.

[0187] For example, the active layer 273 is preferably formed by co-evaporating an n-type semiconductor and a p-type semiconductor.

[0188] The light-emitting element and the light-receiving element can be made of either a low-molecular-weight compound or a high-molecular-weight compound, and may contain an inorganic compound. The layers constituting the light-emitting element and the light-receiving element can be formed by a method such as vapor deposition (including vacuum vapor deposition), a transfer method, a printing method, an inkjet method, or a coating method.

[0189] Display device 280B shown in FIG. 12B differs from display device 280A in that light receiving element 270PD and light emitting element 270R have the same configuration.

[0190] The light receiving element 270PD and the light emitting element 270R have the active layer 273 and the light emitting layer 283R in common.

[0191] Here, it is preferable that light receiving element 270PD has a common configuration with a light emitting element that emits light of a longer wavelength than the light to be detected. For example, light receiving element 270PD configured to detect blue light can have the same configuration as one or both of light emitting element 270R and light emitting element 270G. For example, light receiving element 270PD configured to detect green light can have the same configuration as light emitting element 270R.

[0192] By using a common configuration for the light receiving element 270PD and the light emitting element 270R, the number of film formation steps and the number of masks can be reduced compared to a configuration in which the light receiving element 270PD and the light emitting element 270R have separate layers, thereby reducing the manufacturing steps and manufacturing costs of the display device.

[0193] Furthermore, by using a common configuration for the light receiving element 270PD and the light emitting element 270R, the margin for misalignment can be narrowed compared to a configuration in which the light receiving element 270PD and the light emitting element 270R have separate layers. This allows for an increased pixel aperture ratio, improving the light extraction efficiency of the display device. This also extends the life of the light emitting element. Furthermore, the display device can display high brightness. Furthermore, it also allows for higher resolution display devices.

[0194] Light-emitting layer 283R includes a light-emitting material that emits red light. Active layer 273 includes an organic compound that absorbs light with a wavelength shorter than red (for example, one or both of green light and blue light). Active layer 273 preferably includes an organic compound that does not easily absorb red light and absorbs light with a wavelength shorter than red. This allows red light to be extracted efficiently from light-emitting element 270R, and light-receiving element 270PD to detect light with a wavelength shorter than red with high accuracy.

[0195] Furthermore, in the display device 280B, an example is shown in which the light emitting element 270R and the light receiving element 270PD have the same configuration, but the light emitting element 270R and the light receiving element 270PD may have optical adjustment layers of different thicknesses.

[0196] The display device 280C shown in Figures 13A and 13B has a light-receiving / light-emitting element 270R·PD that emits red (R) light and has a light-receiving function, a light-emitting element 270G that emits green (G) light, and a light-emitting element 270B that emits blue (B) light.

[0197] Each light-emitting element has a pixel electrode 271, a hole injection layer 281, a hole transport layer 282, a light-emitting layer, an electron transport layer 284, an electron injection layer 285, and a common electrode 275 stacked in this order. Light-emitting element 270G has a light-emitting layer 283G, and light-emitting element 270B has a light-emitting layer 283B. Light-emitting layer 283G contains a light-emitting material that emits green light, and light-emitting layer 283B contains a light-emitting material that emits blue light.

[0198] The light emitting / receiving elements 270R and PD have a pixel electrode 271, a hole injection layer 281, a hole transport layer 282, an active layer 273, a light emitting layer 283R, an electron transport layer 284, an electron injection layer 285, and a common electrode 275 laminated in this order.

[0199] The light receiving and emitting elements 270R and 270PD of the display device 280C have the same configuration as the light emitting element 270R and the light receiving element 270PD of the display device 280B. The light emitting elements 270G and 270B of the display device 280C also have the same configuration as the light emitting elements 270G and 270B of the display device 280B.

[0200] 13A shows a case where the light emitting / receiving elements 270R and PD function as light emitting elements. In FIG. 13A, an example is shown in which the light emitting element 270B emits blue light, the light emitting element 270G emits green light, and the light emitting / receiving elements 270R and PD emit red light.

[0201] Fig. 13B shows a case where the light receiving / emitting elements 270R·PD function as light receiving elements. Fig. 13B shows an example in which the light receiving / emitting elements 270R·PD detect blue light emitted by the light emitting element 270B and green light emitted by the light emitting element 270G.

[0202] The light emitting element 270B, the light emitting element 270G, and the light emitting and receiving elements 270R and PD each have a pixel electrode 271 and a common electrode 275. In this embodiment, a case will be described in which the pixel electrode 271 functions as an anode and the common electrode 275 functions as a cathode.

[0203] In this embodiment, similarly to the light-emitting element, the pixel electrode 271 also functions as an anode in the light-emitting element 270R·PD, and the common electrode 275 functions as a cathode. In other words, by applying a reverse bias between the pixel electrode 271 and the common electrode 275 and driving the light-receiving / light-emitting element 270R·PD, the light that is incident on the light-receiving / light-emitting element 270R·PD can be detected, an electric charge can be generated, and the electric charge can be extracted as a current.

[0204] 13A and 13B can be said to have a configuration in which an active layer 273 is added to a light-emitting element. In other words, by simply adding a process for forming the active layer 273 to the manufacturing process of the light-emitting element, the light-emitting / receiving element 270R / PD can be formed in parallel with the formation of the light-emitting element. Furthermore, the light-emitting element and the light-emitting / receiving element can be formed on the same substrate. Therefore, it is possible to provide the display unit with either or both of an imaging function and a sensing function without significantly increasing the number of manufacturing processes.

[0205] 13A and 13B show an example in which the active layer 273 is provided on the hole transport layer 282, and the light emitting layer 283R is provided on the active layer 273. The light emitting layer 283R may be provided on the hole transport layer 282, and the active layer 273 may be provided on the light emitting layer 283R.

[0206] 13A and 13B, the active layer 273 and the light-emitting layer 283R may be in contact with each other. Alternatively, a buffer layer may be sandwiched between the active layer 273 and the light-emitting layer 283R. The buffer layer may be at least one layer selected from a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, a hole blocking layer, an electron blocking layer, and the like.

[0207] By providing a buffer layer between the active layer 273 and the light-emitting layer 283R, it is possible to suppress the transfer of excitation energy from the light-emitting layer 283R to the active layer 273. In addition, the buffer layer can also be used to adjust the optical path length (cavity length) of the microcavity structure. Therefore, a light-emitting / receiving element having a buffer layer between the active layer 273 and the light-emitting layer 283R can obtain high light-emitting efficiency.

[0208] Furthermore, the light emitting / receiving element may not have at least one layer selected from the hole injection layer 281, the hole transport layer 282, the electron transport layer 284, and the electron injection layer 285. The light emitting / receiving element may also have other functional layers such as a hole blocking layer and an electron blocking layer.

[0209] Furthermore, the light emitting / receiving element may have a layer that serves as both the light emitting layer and the active layer, instead of having the active layer 273 and the light emitting layer 283R. The layer that serves as both the light emitting layer and the active layer may be, for example, a layer containing three materials: an n-type semiconductor that can be used for the active layer 273, a p-type semiconductor that can be used for the active layer 273, and a light emitting substance that can be used for the light emitting layer 283R.

[0210] It is preferable that the lowest energy absorption band in the absorption spectrum of the mixed material of n-type and p-type semiconductors does not overlap with the maximum peak in the emission spectrum (PL spectrum) of the luminescent substance, and it is more preferable that they are sufficiently separated from each other.

[0211] In the light emitting / receiving element, a conductive film that transmits visible light is used for the electrode on the light extraction side, and a conductive film that reflects visible light is preferably used for the electrode on the non-light extraction side.

[0212] The functions and materials of the layers constituting the light emitting / receiving element are similar to those of the layers constituting the light emitting element and the light receiving element, and therefore detailed description thereof will be omitted.

[0213] Below, a detailed structure of a display device according to one embodiment of the present invention will be described with reference to FIGS.

[0214] [Display device 100A] FIG. 14A shows a cross-sectional view of the display device 100A.

[0215] The display device 100A includes a light receiving element 110 and a light emitting element 190.

[0216] The light-emitting element 190 has a pixel electrode 191, a buffer layer 192, a light-emitting layer 193, a buffer layer 194, and a common electrode 115 stacked in this order. The buffer layer 192 can have one or both of a hole injection layer and a hole transport layer. The light-emitting layer 193 contains an organic compound. The buffer layer 194 can have one or both of an electron injection layer and an electron transport layer. The light-emitting element 190 has a function of emitting visible light 121. Note that the display device 100A may further have a light-emitting element having a function of emitting infrared light.

[0217] The light receiving element 110 has a pixel electrode 191, a buffer layer 182, an active layer 183, a buffer layer 184, and a common electrode 115 stacked in this order. The buffer layer 182 may have a hole transport layer. The active layer 183 includes an organic compound. The buffer layer 184 may have an electron transport layer. The light receiving element 110 has a function of detecting visible light. The light receiving element 110 may also have a function of detecting infrared light.

[0218] In the present embodiment, it is assumed that the pixel electrode 191 functions as an anode and the common electrode 115 functions as a cathode in both the light-emitting element 190 and the light-receiving element 110. In other words, by driving the light-receiving element 110 by applying a reverse bias between the pixel electrode 191 and the common electrode 115, the display device 100A can detect light incident on the light-receiving element 110, generate electric charges, and extract them as a current.

[0219] The pixel electrode 191, the buffer layer 182, the active layer 183, the light-emitting layer 193, the buffer layer 184, the buffer layer 194, and the common electrode 115 may each have a single layer structure or a multilayer structure.

[0220] The pixel electrodes 191 are located on the insulating layer 214. Each pixel electrode 191 can be formed using the same material and in the same process. The ends of the pixel electrodes 191 are covered with a partition wall 216. Two adjacent pixel electrodes 191 are electrically insulated (or electrically separated) from each other by the partition wall 216.

[0221] An organic insulating film is suitable for the partition wall 216. Materials that can be used for the organic insulating film include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimideamide resin, siloxane resin, benzocyclobutene resin, phenol resin, and precursors of these resins. The partition wall 216 is a layer that transmits visible light. Instead of the partition wall 216, a partition wall that blocks visible light may be provided.

[0222] The common electrode 115 is a layer that is used in common by the light receiving element 110 and the light emitting element 190 .

[0223] The materials and film thicknesses of the pair of electrodes of the light receiving element 110 and the light emitting element 190 can be made the same, which leads to a reduction in manufacturing costs and simplification of the manufacturing process of the display device.

[0224] The display device 100A has a light receiving element 110, a light emitting element 190, a transistor 131, a transistor 132, and the like between a pair of substrates (substrate 151 and substrate 152).

[0225] In the light-receiving element 110, the buffer layer 182, active layer 183, and buffer layer 184, which are respectively located between the pixel electrode 191 and the common electrode 115, can also be referred to as organic layers (layers containing an organic compound). The pixel electrode 191 preferably has a function of reflecting visible light. The common electrode 115 has a function of transmitting visible light. Note that, when the light-receiving element 110 is configured to detect infrared light, the common electrode 115 has a function of transmitting infrared light. Furthermore, the pixel electrode 191 preferably has a function of reflecting infrared light.

[0226] The light receiving element 110 has a function of detecting light. Specifically, the light receiving element 110 is a photoelectric conversion element that receives light 122 incident from outside the display device 100A and converts the received light into an electrical signal. The light 122 can also be said to be light emitted by the light emitting element 190 and reflected by an object. The light 122 may also be incident on the light receiving element 110 via a lens or the like provided in the display device 100A.

[0227] In the light-emitting element 190, the buffer layer 192, the light-emitting layer 193, and the buffer layer 194, which are respectively located between the pixel electrode 191 and the common electrode 115, can also be collectively referred to as an EL layer. The EL layer has at least the light-emitting layer 193. As described above, the pixel electrode 191 preferably has a function of reflecting visible light. Furthermore, the common electrode 115 has a function of transmitting visible light. Note that, when the display device 100A is configured to have a light-emitting element that emits infrared light, the common electrode 115 has a function of transmitting infrared light. Furthermore, the pixel electrode 191 preferably has a function of reflecting infrared light.

[0228] It is preferable that a micro-optical resonator (microcavity) structure be applied to the light-emitting element included in the display device of this embodiment mode.

[0229] The buffer layer 192 or the buffer layer 194 may function as an optical adjustment layer. By varying the thickness of the buffer layer 192 or the buffer layer 194, it is possible to enhance and extract light of a specific color in each light-emitting element.

[0230] The light-emitting element 190 has a function of emitting visible light. Specifically, the light-emitting element 190 is an electroluminescent element that emits light toward the substrate 152 by applying a voltage between the pixel electrode 191 and the common electrode 115 (see visible light 121).

[0231] The pixel electrode 191 of the light-receiving element 110 is electrically connected to the source or drain of the transistor 131 through an opening provided in the insulating layer 214 .

[0232] A pixel electrode 191 of the light-emitting element 190 is electrically connected to the source or drain of the transistor 132 through an opening provided in the insulating layer 214 .

[0233] The transistor 131 and the transistor 132 are adjacent to each other on the same layer (substrate 151 in FIG. 14A).

[0234] At least a part of the circuit electrically connected to the light receiving element 110 is preferably formed using the same material and in the same process as the circuit electrically connected to the light emitting element 190. This allows the display device to be thinner and the manufacturing process to be simplified compared to when the two circuits are formed separately.

[0235] Preferably, the light receiving element 110 and the light emitting element 190 are each covered with a protective layer 116. In Fig. 14A, the protective layer 116 is provided on and in contact with the common electrode 115. By providing the protective layer 116, it is possible to prevent impurities such as water from entering the light receiving element 110 and the light emitting element 190, thereby improving the reliability of the light receiving element 110 and the light emitting element 190. In addition, the protective layer 116 and the substrate 152 are bonded together by an adhesive layer 142.

[0236] A light-shielding layer 158 is provided on the surface of the substrate 152 facing the substrate 151. The light-shielding layer 158 has openings at positions overlapping the light-emitting element 190 and the light-receiving element 110.

[0237] Here, the light receiving element 110 detects light emitted by the light emitting element 190 and reflected by the object. However, there is a case where the light emitted by the light emitting element 190 is reflected within the display device 100A and is incident on the light receiving element 110 without passing through the object. The light blocking layer 158 can suppress the influence of such stray light. For example, if the light blocking layer 158 is not provided, the light 123 emitted by the light emitting element 190 may be reflected by the substrate 152, and the reflected light 124 may be incident on the light receiving element 110. By providing the light blocking layer 158, it is possible to prevent the reflected light 124 from being incident on the light receiving element 110. This reduces noise and improves the sensitivity of the sensor using the light receiving element 110.

[0238] The light-shielding layer 158 can be made of a material that blocks light emitted from the light-emitting elements. The light-shielding layer 158 preferably absorbs visible light. For example, the light-shielding layer 158 can be made of a black matrix using a metal material or a resin material containing a pigment (such as carbon black) or a dye. The light-shielding layer 158 may have a laminated structure of red, green, and blue color filters.

[0239] [Display device 100B] 14B and 14C are cross-sectional views of the display device 100B. In the following description of the display device, the description of the same configuration as the display device described above may be omitted.

[0240] The display device 100B includes a light emitting element 190B, a light emitting element 190G, and light emitting and receiving elements 190R and 190PD.

[0241] The light emitting element 190B has a pixel electrode 191, a buffer layer 192B, a light emitting layer 193B, a buffer layer 194B, and a common electrode 115 stacked in this order. The light emitting element 190B has a function of emitting blue light 121B.

[0242] The light emitting element 190G has, stacked in this order, a pixel electrode 191, a buffer layer 192G, a light emitting layer 193G, a buffer layer 194G, and a common electrode 115. The light emitting element 190G has a function of emitting green light 121G.

[0243] The light emitting / receiving elements 190R·PD have a pixel electrode 191, a buffer layer 192R, an active layer 183, a light emitting layer 193R, a buffer layer 194R, and a common electrode 115 stacked in this order. The light emitting / receiving elements 190R·PD have a function of emitting red light 121R and a function of detecting light 122.

[0244] 14B shows a case where the light emitting / receiving elements 190R and PD function as light emitting elements. In FIG. 14B, an example is shown in which the light emitting element 190B emits blue light, the light emitting element 190G emits green light, and the light emitting / receiving elements 190R and PD emit red light.

[0245] Fig. 14C shows a case where the light receiving / emitting elements 190R·PD function as light receiving elements, and Fig. 14C shows an example in which the light receiving / emitting elements 190R·PD detect blue light emitted by the light emitting element 190B and green light emitted by the light emitting element 190G.

[0246] The display device 100B has light emitting and receiving elements 190R and PD, a light emitting element 190G, a light emitting element 190B, a transistor 132, and the like between a pair of substrates (substrate 151 and substrate 152).

[0247] The pixel electrode 191 is located on the insulating layer 214. Two adjacent pixel electrodes 191 are electrically insulated from each other by a partition wall 216. The pixel electrode 191 is electrically connected to the source or drain of the transistor 132 through an opening provided in the insulating layer 214.

[0248] The light emitting / receiving element and the light emitting element are preferably covered with a protective layer 116. In addition, the protective layer 116 and the substrate 152 are bonded together by an adhesive layer 142. A light blocking layer 158 is provided on the surface of the substrate 152 facing the substrate 151.

[0249] [Display device 100C] FIG. 15A shows a cross-sectional view of the display device 100C.

[0250] The display device 100C includes a light receiving element 110 and a light emitting element 190.

[0251] The light-emitting element 190 has a pixel electrode 191, a common layer 112, a light-emitting layer 193, a common layer 114, and a common electrode 115, in this order. The common layer 112 can have one or both of a hole injection layer and a hole transport layer. The light-emitting layer 193 contains an organic compound. The common layer 114 can have one or both of an electron injection layer and an electron transport layer. The light-emitting element 190 has a function of emitting visible light. Note that the display device 100C may further have a light-emitting element having a function of emitting infrared light.

[0252] The light receiving element 110 has a pixel electrode 191, a common layer 112, an active layer 183, a common layer 114, and a common electrode 115 stacked in this order. The active layer 183 contains an organic compound. The light receiving element 110 has a function of detecting visible light. The light receiving element 110 may also have a function of detecting infrared light.

[0253] The pixel electrode 191, the common layer 112, the active layer 183, the light-emitting layer 193, the common layer 114, and the common electrode 115 may each have a single-layer structure or a laminated structure.

[0254] The pixel electrode 191 is located on the insulating layer 214. Two adjacent pixel electrodes 191 are electrically insulated from each other by a partition wall 216. The pixel electrode 191 is electrically connected to the source or drain of the transistor 132 through an opening provided in the insulating layer 214.

[0255] The common layer 112, the common layer 114, and the common electrode 115 are layers that are used in common between the light receiving element 110 and the light emitting element 190. By making at least some of the layers that constitute the light receiving element 110 and the light emitting element 190 have a common structure, the manufacturing process of the display device can be reduced, which is preferable.

[0256] The display device 100C includes a light receiving element 110, a light emitting element 190, a transistor 131, a transistor 132, and the like between a pair of substrates (substrate 151 and substrate 152).

[0257] The light receiving element 110 and the light emitting element 190 are preferably covered with a protective layer 116. The protective layer 116 and the substrate 152 are bonded together by an adhesive layer 142.

[0258] A resin layer 159 is provided on the surface of the substrate 152 facing the substrate 151. The resin layer 159 is provided at a position overlapping the light emitting element 190, but is not provided at a position overlapping the light receiving element 110.

[0259] 15B, the resin layer 159 can be configured to be provided at a position overlapping the light-emitting element 190 and to have an opening 159p at a position overlapping the light-receiving element 110. Alternatively, the resin layer 159 can be configured to be provided in an island shape at a position overlapping the light-emitting element 190 and not at a position overlapping the light-receiving element 110, as shown in FIG.

[0260] A light-shielding layer 158 is provided on the surface of the substrate 152 facing the substrate 151 and on the surface of the resin layer 159 facing the substrate 151. The light-shielding layer 158 has openings at positions overlapping the light-emitting element 190 and the light-receiving element 110.

[0261] Here, the light receiving element 110 detects light emitted by the light emitting element 190 and reflected by the object. However, there are cases where the light emitted by the light emitting element 190 is reflected within the display device 100C and incident on the light receiving element 110 without passing through the object. The light blocking layer 158 absorbs such stray light and can reduce the stray light incident on the light receiving element 110. For example, the light blocking layer 158 can absorb stray light 123a that passes through the resin layer 159 and is reflected by the surface of the substrate 152 facing the substrate 151. The light blocking layer 158 can also absorb stray light 123b before it reaches the resin layer 159. This can reduce the stray light incident on the light receiving element 110. This can reduce noise and increase the sensitivity of a sensor using the light receiving element 110. In particular, it is preferable that the light blocking layer 158 is located close to the light emitting element 190, as this can further reduce stray light. Furthermore, if the light-shielding layer 158 is located close to the light-emitting element 190, the viewing angle dependency of the display can be suppressed, which is also preferable from the viewpoint of improving the display quality.

[0262] Furthermore, by providing the light-shielding layer 158, it is possible to control the range in which the light receiving element 110 detects light. If the light-shielding layer 158 is located away from the light receiving element 110, the imaging range becomes narrower, and the imaging resolution can be increased.

[0263] When the resin layer 159 has an opening, the light-shielding layer 158 preferably covers at least a part of the opening and at least a part of the side surface of the resin layer 159 exposed at the opening.

[0264] When the resin layer 159 is provided in an island shape, the light-shielding layer 158 preferably covers at least a part of the side surface of the resin layer 159 .

[0265] In this way, since the light-shielding layer 158 is provided along the shape of the resin layer 159, the distance from the light-shielding layer 158 to the light-emitting element 190 (specifically, the light-emitting region of the light-emitting element 190) is shorter than the distance from the light-shielding layer 158 to the light-receiving element 110 (specifically, the light-receiving region of the light-receiving element 110). This makes it possible to reduce sensor noise, increase imaging resolution, and suppress viewing angle dependency of the display. Therefore, it is possible to improve both the display quality and imaging quality of the display device.

[0266] The resin layer 159 is a layer that transmits light emitted from the light-emitting element 190. Examples of materials for the resin layer 159 include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimideamide resin, siloxane resin, benzocyclobutene-based resin, phenolic resin, and precursors of these resins. The structure provided between the substrate 152 and the light-shielding layer 158 is not limited to a resin layer, and an inorganic insulating film or the like may also be used. The thicker the structure, the greater the difference between the distance from the light-shielding layer to the light-receiving element and the distance from the light-shielding layer to the light-emitting element. Organic insulating films such as resins are easy to form thick, so they are suitable for the structure.

[0267] To compare the distance from the light-shielding layer 158 to the light-receiving element 110 with the distance from the light-shielding layer 158 to the light-emitting element 190, for example, the shortest distance L1 from the end of the light-shielding layer 158 on the light-receiving element 110 side to the common electrode 115 and the shortest distance L2 from the end of the light-shielding layer 158 on the light-emitting element 190 side to the common electrode 115 can be used. When the shortest distance L2 is shorter than the shortest distance L1, stray light from the light-emitting element 190 can be suppressed and the sensitivity of the sensor using the light-receiving element 110 can be increased. In addition, the viewing angle dependency of the display can be suppressed. When the shortest distance L1 is longer than the shortest distance L2, the imaging range of the light-receiving element 110 can be narrowed and the imaging resolution can be increased.

[0268] In addition, by configuring the adhesive layer 142 so that the portion that overlaps the light receiving element 110 is thicker than the portion that overlaps the light emitting element 190, a difference can be created between the distance from the light blocking layer 158 to the light receiving element 110 and the distance from the light blocking layer 158 to the light emitting element 190.

[0269] Below, a more detailed configuration of a display device according to one embodiment of the present invention will be described with reference to FIGS.

[0270] [Display device 100D] FIG. 16 shows a perspective view of the display device 100D, and FIG. 17 shows a cross-sectional view of the display device 100D.

[0271] The display device 100D has a configuration in which a substrate 152 and a substrate 151 are bonded together. In Fig. 16, the substrate 152 is indicated by a dashed line.

[0272] The display device 100D has a display unit 162, a circuit 164, wiring 165, etc. Fig. 16 shows an example in which an IC 173 and an FPC 172 are mounted on the display device 100D. Therefore, the configuration shown in Fig. 16 can also be said to be a display module having the display device 100D, an IC (integrated circuit), and an FPC (flexible printed circuit).

[0273] The circuit 164 can be, for example, a scanning line driver circuit.

[0274] The wiring 165 has a function of supplying signals and power to the display unit 162 and the circuit 164. The signals and power are input to the wiring 165 from the outside via the FPC 172 or from the IC 173.

[0275] 16 shows an example in which an IC 173 is provided on a substrate 151 by a COG (Chip On Glass) method or a COF (Chip On Film) method. The IC 173 may be, for example, an IC having a scanning line driver circuit or a signal line driver circuit. The display device 100D and the display module may be configured without an IC. Alternatively, the IC may be mounted on an FPC by a COF method or the like.

[0276] Figure 17 shows an example of a cross section of the display device 100D shown in Figure 16, with a portion of the area including the FPC 172, a portion of the area including the circuit 164, a portion of the area including the display unit 162, and a portion of the area including the end portion cut away.

[0277] A display device 100D shown in FIG. 17 includes, between a substrate 151 and a substrate 152, a transistor 241, a transistor 245, a transistor 246, a transistor 247, a light emitting element 190B, a light emitting element 190G, and light emitting and receiving elements 190R and PD.

[0278] The substrate 152 and the protective layer 116 are bonded together by an adhesive layer 142. A solid sealing structure, a hollow sealing structure, or the like can be applied to seal the light emitting element 190B, the light emitting element 190G, and the light emitting / receiving element 190R / PD. In Fig. 17, the space surrounded by the substrate 152, the adhesive layer 142, and the insulating layer 214 is sealed by the adhesive layer 142, and a solid sealing structure is applied.

[0279] The light-emitting element 190B has a layered structure in which a pixel electrode 191, a common layer 112, a light-emitting layer 193B, a common layer 114, and a common electrode 115 are layered in this order from the insulating layer 214 side. The pixel electrode 191 is connected to a conductive layer 222b of a transistor 247 through an opening provided in the insulating layer 214. The transistor 247 has a function of controlling driving of the light-emitting element 190B. An end of the pixel electrode 191 is covered with a partition wall 216. The pixel electrode 191 contains a material that reflects visible light, and the common electrode 115 contains a material that transmits visible light.

[0280] The light-emitting element 190G has a layered structure in which a pixel electrode 191, a common layer 112, a light-emitting layer 193G, a common layer 114, and a common electrode 115 are layered in this order from the insulating layer 214 side. The pixel electrode 191 is connected to a conductive layer 222b of the transistor 246 through an opening provided in the insulating layer 214. The transistor 246 has a function of controlling driving of the light-emitting element 190G.

[0281] The light emitting / receiving elements 190R and PD have a layered structure in which a pixel electrode 191, a common layer 112, an active layer 183, a light emitting layer 193R, a common layer 114, and a common electrode 115 are layered in this order from the insulating layer 214 side. The pixel electrode 191 is electrically connected to a conductive layer 222b of the transistor 245 through an opening provided in the insulating layer 214. The transistor 245 has a function of controlling the driving of the light emitting / receiving elements 190R and PD.

[0282] Light emitted from light emitting element 190B, light emitting element 190G, and light receiving / emitting elements 190R and PD is emitted toward substrate 152. Light is incident on light receiving / emitting elements 190R and PD via substrate 152 and adhesive layer 142. It is preferable to use a material that is highly transparent to visible light for substrate 152 and adhesive layer 142.

[0283] The pixel electrodes 191 of the light-emitting element 190B, the light-emitting element 190G, and the light-receiving / light-emitting elements 190R and PD can be manufactured using the same material and the same process. The common layer 112, the common layer 114, and the common electrode 115 are commonly used by the light-emitting element 190B, the light-emitting element 190G, and the light-receiving / light-emitting elements 190R and PD. The light-receiving / light-emitting element 190R and PD has a configuration in which an active layer 183 is added to the configuration of a light-emitting element that emits red light. Furthermore, the light-emitting element 190B, the light-emitting element 190G, and the light-receiving / light-emitting elements 190R and PD can all have a common configuration except for the configuration of the active layer 183 and the light-emitting layers 193 of each color. This makes it possible to add a light-receiving function to the display unit 162 of the display device 100D without significantly increasing the number of manufacturing processes.

[0284] A light-shielding layer 158 is provided on the surface of substrate 152 facing substrate 151. The light-shielding layer 158 has openings at positions overlapping with light-emitting element 190B, light-emitting element 190G, and light-receiving / light-emitting element 190R·PD. By providing the light-shielding layer 158, the range in which light is detected by light-receiving / light-emitting element 190R·PD can be controlled. As described above, it is preferable to control the light incident on the light-receiving / light-emitting element by adjusting the position of the opening in the light-shielding layer provided at a position overlapping with light-receiving / light-emitting element 190R·PD. Furthermore, by providing the light-shielding layer 158, it is possible to prevent light from being directly incident on light-receiving / light-emitting element 190R·PD from the light-emitting element 190 without passing through an object. Therefore, a sensor with low noise and high sensitivity can be realized.

[0285] The transistor 241, the transistor 245, the transistor 246, and the transistor 247 are all formed over a substrate 151. These transistors can be manufactured using the same material and through the same process.

[0286] An insulating layer 211, an insulating layer 213, an insulating layer 215, and an insulating layer 214 are provided over the substrate 151 in this order. A part of the insulating layer 211 functions as a gate insulating layer for each transistor. A part of the insulating layer 213 functions as a gate insulating layer for each transistor. The insulating layer 215 is provided to cover the transistor. The insulating layer 214 is provided to cover the transistor and functions as a planarization layer. Note that the number of gate insulating layers and the number of insulating layers covering the transistors are not limited, and each may be a single layer or two or more layers.

[0287] It is preferable that at least one insulating layer covering the transistor is made of a material that is resistant to the diffusion of impurities such as water and hydrogen. This allows the insulating layer to function as a barrier layer. With this structure, it is possible to effectively prevent impurities from diffusing into the transistor from the outside, thereby improving the reliability of the display device.

[0288] The insulating layer 211, the insulating layer 213, and the insulating layer 215 are preferably formed using an inorganic insulating film. Examples of the inorganic insulating film that can be used include a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon nitride oxide film, an aluminum oxide film, and an aluminum nitride film. A hafnium oxide film, a hafnium oxynitride film, a hafnium nitride oxide film, an yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, and a neodymium oxide film may also be used. Two or more of the above insulating films may be stacked. A base film may be provided between the substrate 151 and the transistor. The above inorganic insulating film may also be used for the base film.

[0289] Here, organic insulating films often have lower barrier properties than inorganic insulating films. Therefore, it is preferable that the organic insulating film has an opening near the edge of the display device 100D. This can prevent impurities from entering from the edge of the display device 100D through the organic insulating film. Alternatively, the organic insulating film may be formed so that the edge of the organic insulating film is located inside the edge of the display device 100D, so that the organic insulating film is not exposed at the edge of the display device 100D.

[0290] An organic insulating film is suitable for the insulating layer 214, which functions as a planarizing layer. Materials that can be used for the organic insulating film include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimideamide resin, siloxane resin, benzocyclobutene resin, phenol resin, and precursors of these resins.

[0291] By providing a protective layer 116 that covers the light-emitting element 190B, the light-emitting element 190G, and the light-receiving / light-emitting element 190R / PD, it is possible to prevent impurities such as water from entering the light-emitting element 190B, the light-emitting element 190G, and the light-receiving / light-emitting element 190R / PD, thereby improving the reliability of the light-emitting element 190B, the light-emitting element 190G, and the light-receiving / light-emitting element 190R / PD.

[0292] 17, an opening is formed in the insulating layer 214. This makes it possible to prevent impurities from entering the display unit 162 from the outside through the insulating layer 214, even when an organic insulating film is used for the insulating layer 214. This makes it possible to improve the reliability of the display device 100D.

[0293] In a region 228 near the edge of the display device 100D, it is preferable that the insulating layer 215 and the protective layer 116 contact each other through the opening in the insulating layer 214. In particular, it is preferable that the inorganic insulating film of the insulating layer 215 and the inorganic insulating film of the protective layer 116 contact each other. This makes it possible to prevent impurities from entering the display unit 162 from the outside through the organic insulating film. This can therefore improve the reliability of the display device 100D.

[0294] The protective layer 116 may have a single layer or a laminated structure. For example, the protective layer 116 may have a laminated structure of an organic insulating film and an inorganic insulating film. In this case, it is preferable that the end of the inorganic insulating film extends further outward than the end of the organic insulating film.

[0295] The transistor 241, the transistor 245, the transistor 246, and the transistor 247 each include a conductive layer 221 functioning as a gate, an insulating layer 211 functioning as a gate insulating layer, conductive layers 222a and 222b functioning as a source and a drain, a semiconductor layer 231, an insulating layer 213 functioning as a gate insulating layer, and a conductive layer 223 functioning as a gate. Here, the same hatching pattern is applied to multiple layers obtained by processing the same conductive film. The insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231. The insulating layer 213 is located between the conductive layer 223 and the semiconductor layer 231.

[0296] The structure of the transistor included in the display device of this embodiment is not particularly limited. For example, a planar transistor, a staggered transistor, an inverted staggered transistor, or the like can be used. Furthermore, either a top-gate transistor or a bottom-gate transistor structure may be used. Alternatively, gates may be provided above and below a semiconductor layer in which a channel is formed.

[0297] The transistors 241, 245, 246, and 247 each have a structure in which a semiconductor layer in which a channel is formed is sandwiched between two gates. The two gates may be connected and supplied with the same signal to drive the transistor. Alternatively, the threshold voltage of the transistor may be controlled by applying a potential for controlling the threshold voltage to one of the two gates and a potential for driving the other.

[0298] The crystallinity of a semiconductor material used for a transistor is not particularly limited, and any of an amorphous semiconductor and a crystalline semiconductor (a microcrystalline semiconductor, a polycrystalline semiconductor, a single crystal semiconductor, or a semiconductor having a crystalline region in part) may be used. The use of a crystalline semiconductor is preferable because it can suppress deterioration of transistor characteristics.

[0299] The semiconductor layer of the transistor preferably contains a metal oxide (also referred to as an oxide semiconductor). Alternatively, the semiconductor layer of the transistor may contain silicon. Examples of silicon include amorphous silicon and crystalline silicon (such as low-temperature polysilicon and single-crystal silicon).

[0300] The semiconductor layer preferably contains, for example, indium, M (wherein M is one or more elements selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium), and zinc. In particular, M is preferably one or more elements selected from aluminum, gallium, yttrium, and tin.

[0301] In particular, it is preferable to use an oxide containing indium (In), gallium (Ga), and zinc (Zn) (also referred to as IGZO) as the semiconductor layer.

[0302] When the semiconductor layer is an In-M-Zn oxide, the atomic ratio of In in the In-M-Zn oxide is preferably equal to or greater than the atomic ratio of M. Examples of atomic ratios of metal elements in such In-M-Zn oxides include compositions in which In:M:Zn=1:1:1 or thereabouts, In:M:Zn=1:1:1.2 or thereabouts, In:M:Zn=2:1:3 or thereabouts, In:M:Zn=3:1:2 or thereabouts, In:M:Zn=4:2:3 or thereabouts, In:M:Zn=4:2:4.1 or thereabouts, In:M:Zn=5:1:3 or thereabouts, In:M:Zn=5:1:6 or thereabouts, In:M:Zn=5:1:7 or thereabouts, In:M:Zn=5:1:8 or thereabouts, In:M:Zn=6:1:6 or thereabouts, and In:M:Zn=5:2:5 or thereabouts, etc. Note that "nearby compositions" includes a range of ±30% of the desired atomic ratio.

[0303] For example, when describing a composition with an atomic ratio of In:Ga:Zn=4:2:3 or thereabout, this includes a case where, when the atomic ratio of In is 4, the atomic ratio of Ga is 1 to 3 and the atomic ratio of Zn is 2 to 4. Furthermore, when describing a composition with an atomic ratio of In:Ga:Zn=5:1:6 or thereabout, this includes a case where, when the atomic ratio of In is 5, the atomic ratio of Ga is greater than 0.1 and less than 2 and the atomic ratio of Zn is greater than 5 and less than 7. Furthermore, when describing a composition with an atomic ratio of In:Ga:Zn=1:1:1 or thereabout, this includes a case where, when the atomic ratio of In is 1, the atomic ratio of Ga is greater than 0.1 and less than 2 and the atomic ratio of Zn is greater than 0.1 and less than 2.

[0304] The transistors included in the circuit 164 may have the same structure as or different from the transistors included in the display portion 162. The transistors included in the circuit 164 may all have the same structure or may have two or more types of structures. Similarly, the transistors included in the display portion 162 may all have the same structure or may have two or more types of structures.

[0305] A connection portion 244 is provided in an area of ​​the substrate 151 where the substrate 152 does not overlap. In the connection portion 244, the wiring 165 is electrically connected to the FPC 172 via the conductive layer 166 and the connection layer 242. The conductive layer 166, which is obtained by processing the same conductive film as the pixel electrode 191, is exposed on the upper surface of the connection portion 244. This allows the connection portion 244 and the FPC 172 to be electrically connected via the connection layer 242.

[0306] Various optical members can be disposed on the outside of the substrate 152. Examples of optical members include a polarizing plate, a retardation plate, a light diffusion layer (such as a diffusion film), an anti-reflection layer, and a light collecting film. In addition, an anti-static film that suppresses the adhesion of dust, a water-repellent film that makes it difficult for dirt to adhere, a hard coat film that suppresses scratches caused by use, an impact absorbing layer, etc. may be disposed on the outside of the substrate 152.

[0307] The substrate 151 and the substrate 152 can each be made of glass, quartz, ceramic, sapphire, resin, etc. Using a flexible material for the substrate 151 and the substrate 152 can increase the flexibility of the display device.

[0308] The adhesive layer can be made of various curable adhesives, such as photo-curable adhesives (e.g., ultraviolet curable), reactive curable adhesives, thermosetting adhesives, and anaerobic adhesives. Examples of such adhesives include epoxy resin, acrylic resin, silicone resin, phenolic resin, polyimide resin, imide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) resin, and EVA (ethylene vinyl acetate) resin. Materials with low moisture permeability, such as epoxy resin, are particularly preferred. Two-component resins may also be used. Adhesive sheets, etc., may also be used.

[0309] The connection layer may be made of an anisotropic conductive film (ACF), an anisotropic conductive paste (ACP), or the like.

[0310] The above descriptions can be referred to for the configurations and materials of the light emitting elements 190G and 190B and the light emitting and receiving elements 190R and PD.

[0311] Materials that can be used for conductive layers such as the gate, source, and drain of a transistor, as well as various wirings and electrodes that constitute a display device include metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten, and alloys containing these metals as main components, etc. Films containing these materials can be used as a single layer or a stacked layer structure.

[0312] Examples of light-transmitting conductive materials include conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, and zinc oxide containing gallium, or graphene. Alternatively, metal materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium, and alloy materials containing these metal materials, can be used. Alternatively, nitrides of these metal materials (e.g., titanium nitride) can be used. When using metal materials or alloy materials (or their nitrides), it is preferable to thin them thin enough to have light-transmitting properties. A stacked film of the above materials can also be used as the conductive layer. For example, a stacked film of an alloy of silver and magnesium and indium tin oxide is preferable because it can increase conductivity. These can also be used as conductive layers such as various wirings and electrodes constituting a display device, and conductive layers (conductive layers functioning as pixel electrodes or common electrodes) of light-emitting elements and light-receiving elements (or light-emitting / receiving elements).

[0313] Examples of insulating materials that can be used for each insulating layer include resins such as acrylic resin and epoxy resin, and inorganic insulating materials such as silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, and aluminum oxide.

[0314] [Display device 100E] 18 and 19A show cross-sectional views of the display device 100E. The perspective view of the display device 100E is similar to that of the display device 100D (FIG. 13). FIG. 18 shows an example of a cross section of the display device 100E when a portion of a region including the FPC 172, a portion of the circuit 164, and a portion of the display unit 162 are cut away. FIG. 19A shows an example of a cross section of the display device 100E when a portion of the display unit 162 is cut away. FIG. 18 shows an example of a cross section of the display unit 162 when a region including the light receiving element 110 and the light emitting element 190R that emits red light is cut away. FIG. 19A shows an example of a cross section of the display unit 162 when a region including the light emitting element 190G that emits green light and the light emitting element 190B that emits blue light is cut away.

[0315] 18 and 19A includes, between a substrate 153 and a substrate 154, a transistor 243, a transistor 248, a transistor 249, a transistor 240, a light-emitting element 190R, a light-emitting element 190G, a light-emitting element 190B, a light-receiving element 110, and the like.

[0316] The resin layer 159 and the common electrode 115 are bonded together via an adhesive layer 142, and a solid sealing structure is applied to the display device 100E.

[0317] Substrate 153 and insulating layer 212 are bonded together by adhesive layer 155. Substrate 154 and insulating layer 157 are bonded together by adhesive layer 156.

[0318] The display device 100E is manufactured by first bonding a first fabrication substrate provided with an insulating layer 212, transistors, a light-receiving element 110, light-emitting elements, and the like to a second fabrication substrate provided with an insulating layer 157, a resin layer 159, a light-shielding layer 158, and the like with an adhesive layer 142. The first fabrication substrate is then peeled off, and a substrate 153 is attached to the exposed surface. The second fabrication substrate is then peeled off, and a substrate 154 is attached to the exposed surface. Thus, the components formed on the first fabrication substrate and the second fabrication substrate are transferred to the substrates 153 and 154. The substrates 153 and 154 are preferably flexible. This enhances the flexibility of the display device 100E.

[0319] The insulating layer 212 and the insulating layer 157 can be formed using the inorganic insulating film that can be used for the insulating layer 211, the insulating layer 213, and the insulating layer 215, respectively.

[0320] The light-emitting element 190R has a layered structure in which a pixel electrode 191, a common layer 112, a light-emitting layer 193R, a common layer 114, and a common electrode 115 are layered in this order from the insulating layer 214b side. The pixel electrode 191 is connected to a conductive layer 169 through an opening provided in the insulating layer 214b. The conductive layer 169 is connected to a conductive layer 222b of the transistor 248 through an opening provided in the insulating layer 214a. The conductive layer 222b is connected to a low-resistance region 231n through an opening provided in the insulating layer 215. In other words, the pixel electrode 191 is electrically connected to the transistor 248. The transistor 248 has a function of controlling driving of the light-emitting element 190R.

[0321] Similarly, the light-emitting element 190G has a layered structure in which a pixel electrode 191, a common layer 112, a light-emitting layer 193G, a common layer 114, and a common electrode 115 are layered in this order from the insulating layer 214b side. The pixel electrode 191 is electrically connected to the low-resistance region 231n of the transistor 249 via the conductive layer 169 and the conductive layer 222b of the transistor 249. That is, the pixel electrode 191 is electrically connected to the transistor 249. The transistor 249 has a function of controlling the driving of the light-emitting element 190G.

[0322] The light-emitting element 190B has a layered structure in which a pixel electrode 191, a common layer 112, a light-emitting layer 193B, a common layer 114, and a common electrode 115 are layered in this order from the insulating layer 214b side. The pixel electrode 191 is electrically connected to the low-resistance region 231n of the transistor 240 via the conductive layer 169 and the conductive layer 222b of the transistor 240. That is, the pixel electrode 191 is electrically connected to the transistor 240. The transistor 240 has a function of controlling driving of the light-emitting element 190B.

[0323] The light receiving element 110 has a layered structure in which a pixel electrode 191, a common layer 112, an active layer 183, a common layer 114, and a common electrode 115 are layered in this order from the insulating layer 214b side.

[0324] The edge of the pixel electrode 191 is covered with a partition wall 216. The pixel electrode 191 includes a material that reflects visible light, and the common electrode 115 includes a material that transmits visible light.

[0325] Light emitted from light emitting elements 190R, 190G, and 190B is emitted toward substrate 154. Light is incident on light receiving element 110 via substrate 154 and adhesive layer 142. For substrate 154, it is preferable to use a material that is highly transparent to visible light.

[0326] Each pixel electrode 191 can be manufactured using the same material and the same process. The common layer 112, the common layer 114, and the common electrode 115 are used in common by the light receiving element 110 and the light emitting elements 190R, 190G, and 190B. The light receiving element 110 and the light emitting elements of each color can have the same configuration except for the configuration of the active layer 183 and the light emitting layer. This allows the light receiving element 110 to be built into the display device 100E without significantly increasing the number of manufacturing processes.

[0327] A resin layer 159 and a light-shielding layer 158 are provided on the surface of the insulating layer 157 facing the substrate 153. The resin layer 159 is provided at a position overlapping the light-emitting elements 190R, 190G, and 190B, but not at a position overlapping the light-receiving element 110. The light-shielding layer 158 is provided to cover the surface of the insulating layer 157 facing the substrate 153, the side surface of the resin layer 159, and the surface of the resin layer 159 facing the substrate 153. The light-shielding layer 158 has openings at a position overlapping the light-receiving element 110 and at positions overlapping each of the light-emitting elements 190R, 190G, and 190B. The provision of the light-shielding layer 158 allows the range in which the light-receiving element 110 detects light to be controlled. Furthermore, the provision of the light-shielding layer 158 prevents light from being directly incident on the light-receiving element 110 from the light-emitting elements 190R, 190G, and 190B without passing through an object. This allows for a sensor with low noise and high sensitivity to be realized. By providing the resin layer 159, the distance from the light-shielding layer 158 to the light-emitting element of each color is shorter than the distance from the light-shielding layer 158 to the light-receiving element 110. This makes it possible to reduce sensor noise and suppress the viewing angle dependency of the display. Therefore, it is possible to improve both the display quality and the imaging quality.

[0328] 18, the partition wall 216 has an opening between the light receiving element 110 and the light emitting element 190R. A light-shielding layer 219a is provided to fill the opening. The light-shielding layer 219a is located between the light receiving element 110 and the light emitting element 190R. The light-shielding layer 219a absorbs light emitted by the light emitting element 190R. This makes it possible to suppress stray light entering the light receiving element 110.

[0329] The spacers 219b are provided on the partition walls 216 and are positioned between the light-emitting elements 190G and 190B. The upper surfaces of the spacers 219b are preferably closer to the light-shielding layer 158 than the upper surface of the light-shielding layer 219a. For example, the sum of the height (thickness) of the partition walls 216 and the height (thickness) of the spacers 219b is preferably greater than the height (thickness) of the light-shielding layer 219a. This makes it easier to fill with the adhesive layer 142. As shown in FIG. 19A , the light-shielding layer 158 may be in contact with the common electrode 115 (or a protective layer) in the overlapping portion between the spacers 219b and the light-shielding layer 158.

[0330] A connection portion 244 is provided in an area of ​​the substrate 153 where the substrate 154 does not overlap. In the connection portion 244, the wiring 165 is electrically connected to the FPC 172 via the conductive layer 167, the conductive layer 166, and the connection layer 242. The conductive layer 167 can be obtained by processing the same conductive film as the conductive layer 169. On the upper surface of the connection portion 244, the conductive layer 166, which is obtained by processing the same conductive film as the pixel electrode 191, is exposed. This allows the connection portion 244 and the FPC 172 to be electrically connected via the connection layer 242.

[0331] The transistor 243, the transistor 248, the transistor 249, and the transistor 240 each include a conductive layer 221 functioning as a gate, an insulating layer 211 functioning as a gate insulating layer, a semiconductor layer including a channel formation region 231i and a pair of low-resistance regions 231n, a conductive layer 222a connected to one of the pair of low-resistance regions 231n, a conductive layer 222b connected to the other of the pair of low-resistance regions 231n, an insulating layer 225 functioning as a gate insulating layer, a conductive layer 223 functioning as a gate, and an insulating layer 215 covering the conductive layer 223. The insulating layer 211 is located between the conductive layer 221 and the channel formation region 231i. The insulating layer 225 is located between the conductive layer 223 and the channel formation region 231i.

[0332] The conductive layer 222a and the conductive layer 222b are each connected to the low-resistance region 231n through an opening provided in the insulating layer 215. One of the conductive layer 222a and the conductive layer 222b functions as a source, and the other functions as a drain.

[0333] 18 and 19A, the insulating layer 225 overlaps with the channel formation region 231i of the semiconductor layer 231 but does not overlap with the low-resistance region 231n. For example, the structure shown in FIGS. 18 and 19A can be manufactured by processing the insulating layer 225 using the conductive layer 223 as a mask. In FIGS. 18 and 19A, the insulating layer 215 is provided to cover the insulating layer 225 and the conductive layer 223, and the conductive layer 222a and the conductive layer 222b are connected to the low-resistance region 231n through openings in the insulating layer 215. Furthermore, an insulating layer covering the transistor may be provided on the conductive layer 222a and the conductive layer 222b.

[0334] 19B shows an example in which the insulating layer 225 covers the top surface and side surfaces of the semiconductor layer. The conductive layer 222a and the conductive layer 222b are connected to the low-resistance region 231n through openings provided in the insulating layer 225 and the insulating layer 215, respectively.

[0335] As described above, in the display device of one embodiment of the present invention, the difference in distance between the two light-emitting elements and the light-receiving element (or light-receiving / light-emitting element) is different from the difference in distance between the two light-emitting elements and the opening of the light-shielding layer that overlaps with the light-receiving element (or light-receiving / light-emitting element). With this configuration, the light-receiving element or the light-receiving / light-emitting element can receive more light from one of the two light-emitting elements than from the other. Therefore, for example, in the display device of one embodiment of the present invention, more light from the light-emitting element used as a light source can be incident on the light-receiving element or the light-receiving / light-emitting element.

[0336] [Pixel circuit example] A display device according to one embodiment of the present invention includes, in a display portion, a first pixel circuit having a light-receiving element and a second pixel circuit having a light-emitting element, and the first pixel circuit and the second pixel circuit are arranged in a matrix.

[0337] FIG. 20A shows an example of a first pixel circuit having a light receiving element, and FIG. 20B shows an example of a second pixel circuit having a light emitting element.

[0338] 20A includes a light receiving element PD, a transistor M1, a transistor M2, a transistor M3, a transistor M4, and a capacitor C1. Here, an example is shown in which a photodiode is used as the light receiving element PD.

[0339] The cathode of the light-receiving element PD is electrically connected to the wiring V1, and the anode is electrically connected to one of the source and drain of the transistor M1. The gate of the transistor M1 is electrically connected to the wiring TX, and the other of the source and drain is electrically connected to one electrode of the capacitor C1, one of the source and drain of the transistor M2, and the gate of the transistor M3. The gate of the transistor M2 is electrically connected to the wiring RES, and the other of the source and drain is electrically connected to the wiring V2. The source and drain of the transistor M3 is electrically connected to the wiring V3, and the other of the source and drain is electrically connected to one of the source and drain of the transistor M4. The gate of the transistor M4 is electrically connected to the wiring SE, and the other of the source and drain is electrically connected to the wiring OUT1.

[0340] A constant potential is supplied to the wiring V1, wiring V2, and wiring V3. When the light-receiving element PD is driven with a reverse bias, a potential lower than the potential of the wiring V1 is supplied to the wiring V2. The transistor M2 is controlled by a signal supplied to the wiring RES and has the function of resetting the potential of the node connected to the gate of the transistor M3 to the potential supplied to the wiring V2. The transistor M1 is controlled by a signal supplied to the wiring TX and has the function of controlling the timing at which the potential of the node changes depending on the current flowing through the light-receiving element PD. The transistor M3 functions as an amplifying transistor that outputs according to the potential of the node. The transistor M4 is controlled by a signal supplied to the wiring SE and functions as a selection transistor that reads the output according to the potential of the node to an external circuit connected to the wiring OUT1.

[0341] 20B includes a light-emitting element EL, transistors M5, M6, and M7, and a capacitor C2. Here, an example is shown in which a light-emitting diode is used as the light-emitting element EL. In particular, it is preferable to use an organic EL element as the light-emitting element EL.

[0342] The transistor M5 has a gate electrically connected to the wiring VG, one of its source and drain electrically connected to the wiring VS, and the other of its source and drain electrically connected to one electrode of the capacitor C2 and the gate of the transistor M6. One of the source and drain of the transistor M6 is electrically connected to the wiring V4, and the other is electrically connected to the anode of the light-emitting element EL and one of the source and drain of the transistor M7. The transistor M7 has a gate electrically connected to the wiring MS, and the other of its source and drain electrically connected to the wiring OUT2. The cathode of the light-emitting element EL is electrically connected to the wiring V5.

[0343] A constant potential is supplied to the wiring V4 and the wiring V5. The anode side of the light-emitting element EL can be set to a high potential, and the cathode side can be set to a lower potential than the anode side. The transistor M5 is controlled by a signal supplied to the wiring VG and functions as a selection transistor for controlling the selection state of the pixel circuit PIX2. The transistor M6 also functions as a drive transistor that controls the current flowing through the light-emitting element EL depending on the potential supplied to its gate. When the transistor M5 is in a conductive state, the potential supplied to the wiring VS is supplied to the gate of the transistor M6, and the light emission brightness of the light-emitting element EL can be controlled depending on the potential. The transistor M7 is controlled by a signal supplied to the wiring MS and has the function of outputting the potential between the transistor M6 and the light-emitting element EL to the outside via the wiring OUT2.

[0344] The wiring V1 to which the cathode of the light receiving element PD is electrically connected and the wiring V5 to which the cathode of the light emitting element EL is electrically connected can be in the same layer and at the same potential.

[0345] In the display device of one embodiment of the present invention, it is preferable that all of the transistors included in the pixel circuits PIX1 and PIX2 be transistors having a metal oxide (also referred to as an oxide semiconductor) in a semiconductor layer in which a channel is formed (hereinafter also referred to as an OS transistor). The OS transistor has an extremely small off-state current and can hold charge accumulated in a capacitor connected in series with the transistor for a long period of time. Furthermore, the use of an OS transistor can reduce the power consumption of the display device.

[0346] Alternatively, in a display device according to one embodiment of the present invention, it is preferable that all of the transistors included in the pixel circuits PIX1 and PIX2 be transistors having silicon in a semiconductor layer in which a channel is formed (hereinafter also referred to as Si transistors). Examples of silicon include single crystal silicon, polycrystalline silicon, and amorphous silicon. In particular, it is preferable to use a transistor having low-temperature polysilicon (LTPS) in a semiconductor layer (hereinafter also referred to as an LTPS transistor). LTPS transistors have high field-effect mobility and can operate at high speed.

[0347] Furthermore, by using Si transistors such as LTPS transistors, it becomes easier to build various circuits consisting of CMOS circuits on the same substrate as the display unit, which simplifies the external circuits mounted on the display device and reduces component and mounting costs.

[0348] Alternatively, in the display device of one embodiment of the present invention, the pixel circuit PIX1 preferably includes two types of transistors. Specifically, the pixel circuit PIX1 preferably includes an OS transistor and an LTPS transistor. By changing the material of the semiconductor layer depending on the function required of the transistor, the quality of the pixel circuit PIX1 can be improved, and the accuracy of sensing and imaging can be increased. In this case, the pixel circuit PIX2 may include either an OS transistor or an LTPS transistor, or both.

[0349] Furthermore, even when two types of transistors (for example, OS transistors and LTPS transistors) are used in a pixel, the use of LTPS transistors makes it easy to integrate various circuits, which are made up of CMOS circuits, on the same substrate as the display unit. This simplifies the external circuits mounted on the display device, reducing component and mounting costs.

[0350] A transistor using a metal oxide, which has a wider band gap and a lower carrier density than silicon, can achieve an extremely small off-state current. Therefore, the small off-state current allows the charge stored in the capacitor connected in series with the transistor to be retained for a long period of time. Therefore, it is preferable to use OS transistors for the transistors M1, M2, and M5 connected in series with the capacitor C1 or C2.

[0351] It is also preferable to use a Si transistor for the transistor M3, which allows the image data to be read out at high speed.

[0352] A display device having a display unit including a first pixel circuit having a light-receiving element and a second pixel circuit having a light-emitting element can be driven in any of an image display mode, an imaging mode, and a simultaneous image display and imaging mode. In the image display mode, for example, a full-color image can be displayed using the light-emitting element. In the imaging mode, for example, an image to be captured (e.g., a single color such as green or blue) can be displayed using the light-emitting element, and the image can be captured using the light-receiving element. In the imaging mode, for example, fingerprint authentication can be performed. In the simultaneous image display and imaging mode, for example, some pixels can display an image to be captured using the light-emitting element and capture the image using the light-receiving element, and the remaining pixels can display a full-color image using the light-emitting element.

[0353] 20A and 20B, the transistors are shown as n-channel transistors, but p-channel transistors can also be used. The transistors are not limited to single-gate transistors and may further have a back gate.

[0354] It is preferable to provide one or more layers having transistors and / or capacitors at positions overlapping the light receiving element PD or the light emitting element EL, which reduces the effective area occupied by each pixel circuit and enables the realization of a high-resolution display unit.

[0355] This embodiment mode can be combined with other embodiment modes as appropriate.

[0356] (Embodiment 3) In this embodiment, a metal oxide (also referred to as an oxide semiconductor) that can be used for the OS transistor described in the above embodiment will be described.

[0357] The metal oxide preferably contains at least indium or zinc. It is particularly preferable that it contains indium and zinc. It is also preferable that it contains aluminum, gallium, yttrium, tin, or the like in addition to these. It may also contain one or more elements selected from boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, cobalt, and the like.

[0358] Furthermore, metal oxides can be formed by a sputtering method, a chemical vapor deposition (CVD) method such as a metal organic chemical vapor deposition (MOCVD) method, or an atomic layer deposition (ALD) method.

[0359] <Classification of crystal structures> Examples of the crystalline structure of oxide semiconductors include amorphous (including completely amorphous), c-axis-aligned crystalline (CAAC), nanocrystalline (nc), cloud-aligned composite (CAC), single crystal, and polycrystal.

[0360] The crystalline structure of a film or substrate can be evaluated using X-ray diffraction (XRD) spectra. For example, it can be evaluated using XRD spectra obtained by GIXD (Grazing-Incidence XRD) measurements. The GIXD method is also called the thin film method or the Seemann-Bohlin method.

[0361] For example, for a quartz glass substrate, the peak shape of the XRD spectrum is nearly symmetrical. On the other hand, for an IGZO film with a crystalline structure, the peak shape of the XRD spectrum is asymmetrical. The asymmetrical peak shape of the XRD spectrum clearly indicates the presence of crystals in the film or substrate. In other words, if the peak shape of the XRD spectrum is not symmetrical, the film or substrate cannot be said to be in an amorphous state.

[0362] The crystalline structure of a film or substrate can also be evaluated by the diffraction pattern (also called the nanobeam electron diffraction pattern) observed using nanobeam electron diffraction (NBED). For example, a halo is observed in the diffraction pattern of a quartz glass substrate, confirming that the quartz glass is in an amorphous state. Furthermore, a spot-like pattern is observed in the diffraction pattern of an IGZO film deposited at room temperature, rather than a halo. For this reason, it is estimated that an IGZO film deposited at room temperature is neither crystalline nor amorphous, but is in an intermediate state, and it cannot be concluded that it is in an amorphous state.

[0363] <<Structure of oxide semiconductor>> Note that oxide semiconductors may be classified differently from the above when focusing on their structures. For example, oxide semiconductors are divided into single-crystal oxide semiconductors and other non-single-crystal oxide semiconductors. Examples of non-single-crystal oxide semiconductors include the above-mentioned CAAC-OS and nc-OS. Non-single-crystal oxide semiconductors include polycrystalline oxide semiconductors, amorphous-like oxide semiconductors (a-like OSs), amorphous oxide semiconductors, and the like.

[0364] Here, the above-mentioned CAAC-OS, nc-OS, and a-like OS will be described in detail.

[0365] [CAAC-OS] CAAC-OS is an oxide semiconductor having multiple crystalline regions, each with its c-axis aligned in a specific direction. The specific direction can be the thickness direction of the CAAC-OS film, the normal direction to the surface on which the CAAC-OS film is formed, or the normal direction to the surface of the CAAC-OS film. A crystalline region is a region with periodic atomic arrangement. If the atomic arrangement is considered as a lattice arrangement, a crystalline region can also be a region with a uniform lattice arrangement. Furthermore, CAAC-OS has a region where multiple crystalline regions are connected in the ab-plane direction, and the region may have distortion. Note that distortion refers to a location where the lattice arrangement changes between a region with a uniform lattice arrangement and a region with a different uniform lattice arrangement in the region where multiple crystalline regions are connected. In other words, CAAC-OS is an oxide semiconductor with a c-axis aligned but no clear orientation in the ab-plane direction.

[0366] Each of the multiple crystalline regions is composed of one or more minute crystals (crystals with a maximum diameter of less than 10 nm). When a crystalline region is composed of one minute crystal, the maximum diameter of the crystalline region is less than 10 nm. When a crystalline region is composed of many minute crystals, the size of the crystalline region may be several tens of nm.

[0367] In an In-M-Zn oxide (wherein M is one or more elements selected from aluminum, gallium, yttrium, tin, titanium, etc.), the CAAC-OS tends to have a layered crystal structure (also referred to as a layered structure) in which a layer containing indium (In) and oxygen (hereinafter referred to as an In layer) and a layer containing M, zinc (Zn), and oxygen (hereinafter referred to as an (M, Zn) layer) are stacked. Note that indium and the element M are mutually substituted. Therefore, the (M, Zn) layer may contain indium. The In layer may contain M. The In layer may contain Zn. The layered structure is observed as a lattice image in a high-resolution transmission electron microscope (TEM) image, for example.

[0368] When the CAAC-OS film is subjected to structural analysis using, for example, an XRD apparatus, a peak indicating c-axis orientation is detected at or near 2θ=31° in out-of-plane XRD measurement using θ / 2θ scan. Note that the position of the peak indicating c-axis orientation (2θ value) may vary depending on the type and composition of the metallic elements constituting the CAAC-OS.

[0369] For example, in the electron diffraction pattern of a CAAC-OS film, multiple bright spots are observed, and the spots are observed at positions that are point-symmetric with respect to the spot of the incident electron beam that has passed through the sample (also called the direct spot).

[0370] When the crystalline region is observed from the specific direction, the lattice arrangement within the crystalline region is basically a hexagonal lattice, but the unit cell is not necessarily a regular hexagon and may be non-regular hexagonal. Furthermore, the distortion may have a pentagonal, heptagonal, or other lattice arrangement. In the CAAC-OS, no clear grain boundaries are observed even near the distortion. This indicates that the formation of grain boundaries is suppressed by the distortion of the lattice arrangement. This is thought to be because the CAAC-OS can tolerate distortion due to the lack of close-packed oxygen atom arrangement in the ab-plane direction and the change in interatomic bond distance caused by metal atom substitution.

[0371] A crystal structure with clear grain boundaries is called polycrystalline. Grain boundaries act as recombination centers, trapping carriers and potentially causing a decrease in the on-state current and field-effect mobility of a transistor. Therefore, CAAC-OS, which lacks clear grain boundaries, is one of the crystalline oxides with a crystal structure suitable for use in the semiconductor layer of a transistor. Zn is preferred for use in CAAC-OS. For example, In-Zn oxide and In-Ga-Zn oxide are suitable because they can suppress the generation of grain boundaries more effectively than In oxide.

[0372] CAAC-OS is an oxide semiconductor with high crystallinity and no clear grain boundaries. Therefore, it can be said that the CAAC-OS is less susceptible to a decrease in electron mobility due to grain boundaries. Furthermore, since the crystallinity of an oxide semiconductor can be reduced by the inclusion of impurities or the generation of defects, the CAAC-OS can also be said to be an oxide semiconductor with few impurities and defects (such as oxygen vacancies). Therefore, oxide semiconductors with CAAC-OS have stable physical properties. Therefore, oxide semiconductors with CAAC-OS are heat-resistant and highly reliable. Furthermore, the CAAC-OS is stable even under high temperatures (so-called thermal budget) during the manufacturing process. Therefore, using a CAAC-OS for an OS transistor can increase the flexibility of the manufacturing process.

[0373] [nc-OS] The nc-OS has periodic atomic arrangement in a microscopic region (e.g., a region of 1 nm to 10 nm, particularly a region of 1 nm to 3 nm). In other words, the nc-OS has microcrystalline structures. The size of the microcrystalline structures is, for example, 1 nm to 10 nm, particularly 1 nm to 3 nm, and therefore these microcrystalline structures are also called nanocrystalline structures. Furthermore, the nc-OS exhibits no regularity in the crystal orientation between different nanocrystalline structures. Therefore, the entire film lacks orientation. Therefore, depending on the analytical method, the nc-OS may be indistinguishable from an a-like OS or an amorphous oxide semiconductor. For example, when a structural analysis of an nc-OS film is performed using an XRD apparatus, no peaks indicating crystallinity are detected in out-of-plane XRD measurements using θ / 2θ scanning. Furthermore, when an nc-OS film is subjected to electron diffraction (also known as selected-area electron diffraction) using an electron beam with a probe diameter larger than that of nanocrystalline structures (e.g., 50 nm or larger), a halo-like diffraction pattern is observed. On the other hand, when electron diffraction (also called nanobeam electron diffraction) is performed on an nc-OS film using an electron beam with a probe diameter close to or smaller than the size of the nanocrystals (for example, 1 nm to 30 nm), an electron diffraction pattern can be obtained in which multiple spots are observed within a ring-shaped region centered on the direct spot.

[0374] [a-like OS] The a-like OS is an oxide semiconductor having a structure between the nc-OS and the amorphous oxide semiconductor. The a-like OS has a pore or low-density region. That is, the a-like OS has lower crystallinity than the nc-OS and CAAC-OS. Furthermore, the a-like OS has a higher hydrogen concentration in the film than the nc-OS and CAAC-OS.

[0375] <<Oxide semiconductor structure>> Next, the above-mentioned CAC-OS will be described in detail, which relates to the material composition.

[0376] [CAC-OS] CAC-OS is a material structure in which elements constituting a metal oxide are unevenly distributed in a size range of 0.5 nm to 10 nm, preferably 1 nm to 3 nm, or a similar size range. Hereinafter, a metal oxide in which one or more metal elements are unevenly distributed and the regions containing the metal elements are mixed in a size range of 0.5 nm to 10 nm, preferably 1 nm to 3 nm, or a similar size range, is also referred to as a mosaic or patch state.

[0377] Furthermore, CAC-OS has a mosaic structure in which the material is separated into first and second regions, and the first regions are distributed throughout the film (hereinafter also referred to as a cloud structure). That is, CAC-OS is a composite metal oxide having a structure in which the first and second regions are mixed.

[0378] Here, the atomic ratios of In, Ga, and Zn to the metal elements constituting the CAC-OS in the In-Ga-Zn oxide are denoted as [In], [Ga], and [Zn], respectively. For example, in the CAC-OS in the In-Ga-Zn oxide, the first region is a region where [In] is larger than [In] in the composition of the CAC-OS film. The second region is a region where [Ga] is larger than [Ga] in the composition of the CAC-OS film. Alternatively, for example, the first region is a region where [In] is larger than [In] in the second region and [Ga] is smaller than [Ga] in the second region. The second region is a region where [Ga] is larger than [Ga] in the first region and [In] is smaller than [In] in the first region.

[0379] Specifically, the first region is a region whose main component is indium oxide, indium zinc oxide, or the like. The second region is a region whose main component is gallium oxide, gallium zinc oxide, or the like. In other words, the first region can be rephrased as a region whose main component is In. The second region can be rephrased as a region whose main component is Ga.

[0380] It should be noted that there are cases where a clear boundary between the first region and the second region cannot be observed.

[0381] In addition, CAC-OS in In-Ga-Zn oxide refers to a material structure containing In, Ga, Zn, and O, in which some regions primarily composed of Ga and other regions primarily composed of In are randomly arranged in a mosaic pattern. Therefore, it is presumed that CAC-OS has a structure in which metal elements are distributed nonuniformly.

[0382] The CAC-OS can be formed, for example, by a sputtering method without heating the substrate. When the CAC-OS is formed by a sputtering method, one or more of an inert gas (typically argon), oxygen gas, and nitrogen gas may be used as the deposition gas. The lower the flow rate ratio of oxygen gas to the total flow rate of deposition gas during deposition, the better. For example, the flow rate ratio of oxygen gas to the total flow rate of deposition gas during deposition is preferably 0% or more and less than 30%, and more preferably 0% or more and 10% or less.

[0383] Furthermore, for example, in the case of CAC-OS in an In-Ga-Zn oxide, EDX mapping obtained using EDX (Energy Dispersive X-ray spectroscopy) confirms that the CAC-OS has a structure in which a region containing In as a main component (first region) and a region containing Ga as a main component (second region) are unevenly distributed and mixed.

[0384] Here, the first region has higher conductivity than the second region. That is, the flow of carriers through the first region causes the metal oxide to exhibit conductivity. Therefore, the first region is distributed in a cloud-like manner in the metal oxide, thereby achieving a high field-effect mobility (μ).

[0385] On the other hand, the second region has higher insulating properties than the first region. That is, the second region is distributed in the metal oxide, thereby suppressing leakage current.

[0386] Therefore, when CAC-OS is used in a transistor, the conductivity due to the first region and the insulating property due to the second region act complementarily, thereby providing the CAC-OS with a switching function (the ability to turn on / off). In other words, CAC-OS has a conductive function in part of the material and an insulating function in part of the material, and the material as a whole functions as a semiconductor. By separating the conductive function from the insulating function, both functions can be maximized. Therefore, by using CAC-OS in a transistor, a high on-current (I on ), high field-effect mobility (μ), and good switching behavior can be achieved.

[0387] Furthermore, a transistor using CAC-OS has high reliability, making it ideal for various semiconductor devices such as display devices.

[0388] Oxide semiconductors have a variety of structures, each with different characteristics. The oxide semiconductor of one embodiment of the present invention may include two or more of an amorphous oxide semiconductor, a polycrystalline oxide semiconductor, an a-like OS, a CAC-OS, an nc-OS, and a CAAC-OS.

[0389] <Transistors containing oxide semiconductors> Next, a case where the oxide semiconductor is used in a transistor will be described.

[0390] By using the oxide semiconductor for a transistor, a transistor with high field-effect mobility and high reliability can be realized.

[0391] For the transistor, an oxide semiconductor with a low carrier concentration is preferably used. For example, the carrier concentration of the oxide semiconductor is 1×10 17 cm -3 Less than 1 × 10 15 cm -3 or less, more preferably 1 × 10 13 cm -3 Less than or equal to 1×10 11 cm -3 or less, more preferably 1 × 10 10 cm -3 Less than 1 x 10 -9 cm -3 That is all. Note that in order to reduce the carrier concentration of an oxide semiconductor film, the impurity concentration in the oxide semiconductor film may be reduced to reduce the density of defect states. In this specification and the like, a semiconductor having a low impurity concentration and a low density of defect states is referred to as a highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor. Note that an oxide semiconductor having a low carrier concentration may also be referred to as a highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor.

[0392] Furthermore, a highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor film has a low density of defect states, and therefore the density of trap states may also be low.

[0393] Furthermore, charges trapped in the trap states of an oxide semiconductor take a long time to dissipate and may behave like fixed charges. Therefore, a transistor in which a channel formation region is formed in an oxide semiconductor with a high density of trap states may have unstable electrical characteristics.

[0394] Therefore, in order to stabilize the electrical characteristics of a transistor, it is effective to reduce the impurity concentration in the oxide semiconductor. Furthermore, in order to reduce the impurity concentration in the oxide semiconductor, it is preferable to also reduce the impurity concentration in the adjacent film. Examples of impurities include hydrogen, nitrogen, alkali metals, alkaline earth metals, iron, nickel, and silicon.

[0395] <Impurities> Here, the influence of each impurity in an oxide semiconductor will be described.

[0396] When an oxide semiconductor contains silicon or carbon, which is one of the Group 14 elements, defect levels are formed in the oxide semiconductor. Therefore, the concentrations of silicon or carbon in the oxide semiconductor and those near the interface with the oxide semiconductor (concentrations obtained by secondary ion mass spectrometry (SIMS)) are calculated as follows: 18 atoms / cm 3 Less than or equal to 2 x 10 17 atoms / cm 3 The following applies.

[0397] Furthermore, when an oxide semiconductor contains an alkali metal or alkaline earth metal, defect levels may be formed and carriers may be generated. Therefore, a transistor using an oxide semiconductor containing an alkali metal or alkaline earth metal is likely to have normally-on characteristics. Therefore, when the concentration of the alkali metal or alkaline earth metal in the oxide semiconductor obtained by SIMS is 1×10 18 atoms / cm 3 Less than or equal to 2 x 10 16 atoms / cm 3 Do the following:

[0398] Furthermore, when nitrogen is contained in an oxide semiconductor, electrons serving as carriers are generated, the carrier concentration increases, and the semiconductor is likely to become n-type. As a result, a transistor using an oxide semiconductor containing nitrogen as a semiconductor tends to have normally-on characteristics. Alternatively, when nitrogen is contained in an oxide semiconductor, trap states may be formed. As a result, the electrical characteristics of the transistor may become unstable. For this reason, the nitrogen concentration in the oxide semiconductor obtained by SIMS is set to 5×10 19 atoms / cm 3 Less than 5 x 10 18 atoms / cm 3 Less than or equal to 1×10 18 atoms / cm 3Less than 5 × 10, more preferably 17 atoms / cm 3 Do the following:

[0399] Furthermore, hydrogen contained in an oxide semiconductor may react with oxygen bonded to a metal atom to form water, which may form an oxygen vacancy. When hydrogen enters the oxygen vacancy, electrons serving as carriers may be generated. Furthermore, some of the hydrogen may bond with oxygen bonded to a metal atom to generate electrons serving as carriers. Therefore, a transistor using an oxide semiconductor containing hydrogen is likely to have normally-on characteristics. For this reason, it is preferable to reduce the amount of hydrogen in the oxide semiconductor as much as possible. Specifically, the hydrogen concentration in an oxide semiconductor measured by SIMS is 1×10 20 atoms / cm 3 Less than 1 x 10 19 atoms / cm 3 less than 5 × 10 18 atoms / cm 3 less than 1×10 18 atoms / cm 3 Make it less than.

[0400] When an oxide semiconductor with sufficiently reduced impurities is used for a channel formation region of a transistor, stable electrical characteristics can be obtained.

[0401] This embodiment mode can be combined with other embodiment modes as appropriate.

[0402] (Fourth embodiment) In this embodiment, electronic devices of one embodiment of the present invention will be described with reference to FIGS.

[0403] An electronic device according to one embodiment of the present invention can capture an image with a display portion and detect a touch operation, thereby improving the functionality, convenience, and the like of the electronic device.

[0404] Examples of electronic devices according to one embodiment of the present invention include electronic devices with relatively large screens, such as television sets, desktop or notebook personal computers, computer monitors, digital signage, and large game machines such as pachinko machines, as well as digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, personal digital assistants, and sound reproduction devices.

[0405] An electronic device according to one embodiment of the present invention may have a sensor (including a function for measuring force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared rays).

[0406] The electronic device of one embodiment of the present invention can have various functions, such as a function to display various information (still images, videos, text images, etc.) on a display portion, a touch panel function, a function to display a calendar, date, time, etc., a function to execute various software (programs), a wireless communication function, a function to read programs or data recorded on a recording medium, etc.

[0407] Electronic device 6500 shown in FIG. 21A is a portable information terminal that can be used as a smartphone.

[0408] The electronic device 6500 includes a housing 6501, a display portion 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, and a light source 6508. The display portion 6502 has a touch panel function.

[0409] The display device described in Embodiment 2 can be applied to the display portion 6502.

[0410] FIG. 21B is a schematic cross-sectional view including the end of the housing 6501 on the microphone 6506 side.

[0411] A light-transmitting protective member 6510 is provided on the display surface side of the housing 6501, and a display panel 6511, optical members 6512, a touch sensor panel 6513, a printed circuit board 6517, a battery 6518, etc. are arranged in the space surrounded by the housing 6501 and the protective member 6510.

[0412] A display panel 6511, an optical member 6512, and a touch sensor panel 6513 are fixed to the protective member 6510 by adhesive layers (not shown).

[0413] In an area outside the display unit 6502, a part of the display panel 6511 is folded back, and an FPC 6515 is connected to the folded back part. An IC 6516 is mounted on the FPC 6515. The FPC 6515 is connected to a terminal provided on a printed circuit board 6517.

[0414] The flexible display of one embodiment of the present invention can be applied to the display panel 6511. Therefore, an extremely lightweight electronic device can be realized. In addition, since the display panel 6511 is extremely thin, a large-capacity battery 6518 can be mounted thereon while keeping the thickness of the electronic device small. Furthermore, by folding back a part of the display panel 6511 and arranging a connection portion with the FPC 6515 on the back side of the pixel portion, an electronic device with a narrow frame can be realized.

[0415] When the display device described in Embodiment 2 is used for the display panel 6511, an image can be captured in the display portion 6502. For example, a fingerprint can be captured on the display panel 6511 for fingerprint authentication.

[0416] The display portion 6502 further includes a touch sensor panel 6513, which allows the display portion 6502 to have a touch panel function. The touch sensor panel 6513 can be of any of various types, such as a capacitive type, a resistive type, a surface acoustic wave type, an infrared type, an optical type, or a pressure-sensitive type. Alternatively, the display panel 6511 may function as a touch sensor, in which case the touch sensor panel 6513 is not necessarily provided.

[0417] 22A shows an example of a television device. A television device 7100 has a display unit 7000 built into a housing 7101. Here, the housing 7101 is supported by a stand 7103.

[0418] The display device described in Embodiment 2 can be applied to the display portion 7000.

[0419] 22A can be operated using an operation switch provided on the housing 7101 or a separate remote control 7111. Alternatively, a touch sensor may be provided in the display unit 7000, and the television 7100 may be operated by touching the display unit 7000 with a finger or the like. The remote control 7111 may have a display unit that displays information output from the remote control 7111. Using the operation keys or touch panel provided on the remote control 7111, the channel and volume can be controlled, and the video displayed on the display unit 7000 can be operated.

[0420] The television device 7100 is configured to include a receiver, a modem, and the like. The receiver can receive general television broadcasts. In addition, by connecting to a wired or wireless communication network via the modem, it is possible to perform one-way (from sender to receiver) or two-way (between sender and receiver, or between receivers, etc.) information communication.

[0421] 22B shows an example of a laptop personal computer 7200. The laptop personal computer 7200 includes a housing 7211, a keyboard 7212, a pointing device 7213, and an external connection port 7214. The housing 7211 includes a display portion 7000.

[0422] The display device described in Embodiment 2 can be applied to the display portion 7000.

[0423] 22C and 22D show an example of digital signage.

[0424] 22C includes a housing 7301, a display unit 7000, and a speaker 7303. The digital signage 7300 may further include an LED lamp, operation keys (including a power switch or an operation switch), a connection terminal, various sensors, a microphone, and the like.

[0425] 22D shows a digital signage 7400 attached to a cylindrical pillar 7401. The digital signage 7400 has a display unit 7000 provided along the curved surface of the pillar 7401.

[0426] The larger the display unit 7000, the more information can be provided at one time. Also, the larger the display unit 7000, the more easily it will attract people's attention, which can increase the advertising effectiveness of, for example, advertisements.

[0427] Applying a touch panel to the display unit 7000 is preferable because it not only displays images or videos on the display unit 7000 but also allows the user to intuitively operate it. Furthermore, when used to provide information such as route information or traffic information, intuitive operation can improve usability.

[0428] 22C and 22D, it is preferable that digital signage 7300 or digital signage 7400 can wirelessly link with information terminal 7311 or information terminal 7411, such as a smartphone carried by a user. For example, advertising information displayed on display unit 7000 can be displayed on the screen of information terminal 7311 or information terminal 7411. Furthermore, by operating information terminal 7311 or information terminal 7411, the display on display unit 7000 can be switched.

[0429] 22C and 22D, the display device described in Embodiment 2 can be applied to the display portion of the information terminal 7311 or the information terminal 7411.

[0430] Furthermore, it is also possible to run a game on the digital signage 7300 or the digital signage 7400 using the screen of the information terminal 7311 or the information terminal 7411 as an operation means (controller), thereby allowing an unspecified number of users to simultaneously participate in and enjoy the game.

[0431] The electronic device shown in Figures 23A to 23F has a housing 9000, a display unit 9001, a speaker 9003, operation keys 9005 (including a power switch or an operation switch), a connection terminal 9006, a sensor 9007 (including the function of measuring force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor or infrared rays), a microphone 9008, etc.

[0432] The electronic devices shown in Figures 23A to 23F have various functions. For example, they may have a function to display various information (still images, videos, text images, etc.) on a display unit, a touch panel function, a function to display a calendar, date, or time, a function to control processing using various software (programs), a wireless communication function, a function to read and process programs or data recorded on a recording medium, etc. Note that the functions of the electronic devices are not limited to these, and they may have various other functions. The electronic devices may have multiple display units. Furthermore, the electronic devices may be provided with a camera or the like, and may have a function to capture still images or videos and store them on a recording medium (external or built-in to the camera), a function to display the captured images on the display unit, etc.

[0433] The electronic devices shown in FIGS. 23A to 23F will be described in detail below.

[0434] FIG. 23A is a perspective view showing a mobile information terminal 9101. The mobile information terminal 9101 can be used as, for example, a smartphone. The mobile information terminal 9101 may be provided with a speaker 9003, a connection terminal 9006, a sensor 9007, and the like. The mobile information terminal 9101 can display text and image information on multiple surfaces thereof. FIG. 23A shows an example in which three icons 9050 are displayed. Information 9051, indicated by a dashed rectangle, can also be displayed on another surface of the display unit 9001. Examples of the information 9051 include notifications of incoming emails, SNS messages, phone calls, etc., the title of the email or SNS message, the sender's name, the date and time, the remaining battery level, and the strength of antenna reception. Alternatively, the icon 9050 or the like may be displayed in the position where the information 9051 is displayed.

[0435] 23B is a perspective view showing mobile information terminal 9102. Mobile information terminal 9102 has a function of displaying information on three or more sides of display unit 9001. Here, an example is shown in which information 9052, information 9053, and information 9054 are displayed on different sides. For example, while carrying mobile information terminal 9102 in a breast pocket of clothes, the user can check information 9053 displayed in a position that can be observed from above mobile information terminal 9102. The user can check the display without taking mobile information terminal 9102 out of their pocket and decide, for example, whether to answer a call.

[0436] FIG. 23C is a perspective view showing a wristwatch-type mobile information terminal 9200. The mobile information terminal 9200 can be used as, for example, a smart watch. The display surface of the display unit 9001 is curved, and display can be performed along the curved display surface. The mobile information terminal 9200 can also perform hands-free calling by communicating with, for example, a headset capable of wireless communication. The mobile information terminal 9200 can also perform data transmission and reception with another information terminal and charge itself via a connection terminal 9006. Note that charging may be performed by wireless power supply.

[0437] 23D to 23F are perspective views showing a foldable mobile information terminal 9201. FIG. 23D shows the mobile information terminal 9201 in an unfolded state, FIG. 23F shows it in a folded state, and FIG. 23E is a perspective view showing a state in the process of changing from one of FIG. 23D and FIG. 23F to the other. The mobile information terminal 9201 is highly portable when folded, and has a seamless, wide display area when unfolded, providing excellent viewability of the display. The display unit 9001 of the mobile information terminal 9201 is supported by three housings 9000 connected by hinges 9055. For example, the display unit 9001 can be bent with a curvature radius of 0.1 mm or more and 150 mm or less.

[0438] This embodiment mode can be combined with other embodiment modes as appropriate. [Explanation of symbols]

[0439] EL: light-emitting element, MS: wiring, PD: light-receiving element, RES: wiring, SE: wiring, TX: wiring, VG: wiring, VS: wiring, 10A: electronic device, 10: electronic device, 11: control unit, 12: memory unit, 13: display unit, 14: detection unit, 21: finger, 22X: fingerprint, 22: fingerprint, 23: fingerprint information, 24: finger, 25: fingerprint, 26: fingerprint information, 30: electronic device, 31: display unit, 32: icon, 33: information, 34: information, 35: first information, 36: second information, 40: electronic device, 41: display unit, 42: input unit, 43: input key, 44: housing, 45: housing, 46: hinge unit, 100A : display device, 100B: display device, 100C: display device, 100D: display device, 100E: display device, 110: light receiving element, 112: common layer, 114: common layer, 115: common electrode, 116: protective layer, 121B: light, 121G: light, 121R: light, 121: visible light, 122: light, 123a: stray light, 123b: stray light, 123: light, 124: reflected light, 131: transistor, 132: transistor, 142: adhesive layer, 151: substrate, 152: substrate, 153: substrate, 154: substrate, 155: adhesive layer, 156: adhesive layer, 157: insulating layer, 158: light-shielding layer, 159p: opening , 159: resin layer, 162: display section, 164: circuit, 165: wiring, 166: conductive layer, 167: conductive layer, 169: conductive layer, 172: FPC, 173: IC, 182: buffer layer, 183: active layer, 184: buffer layer, 190B: light-emitting element, 190G: light-emitting element, 190R: light-emitting element, 190: light-emitting element, 191: pixel electrode, 192B: buffer layer, 192G: buffer layer, 192R: buffer layer, 192: buffer layer, 193B: light-emitting layer, 193G: light-emitting layer, 193R: light-emitting layer, 193: light-emitting layer, 194B: buffer layer, 194G: buffer layer, 194R : buffer layer, 194: buffer layer, 200A: display device, 200B: display device, 201: substrate, 202: finger, 203: layer having light receiving elements, 204: layer having light emitting / receiving elements, 205: functional layer, 207: layer having light emitting elements, 208: stylus, 209: substrate, 211: insulating layer, 212: insulating layer, 213: insulating layer, 214a: insulating layer, 214b: insulating layer, 214: insulating layer, 215: insulating layer, 216: partition wall, 219a: light shielding layer, 219b: spacer, 221: conductive layer, 222a: conductive layer, 222b: conductive layer, 223: conductive layer, 225: insulating layer, 228: region,231i: channel formation region, 231n: low resistance region, 231: semiconductor layer, 240: transistor, 241: transistor, 242: connection layer, 243: transistor, 244: connection portion, 245: transistor, 246: transistor, 247: transistor, 248: transistor, 249: transistor, 252: transistor, 261: contact portion, 262: fingerprint, 266: locus, 270B: light-emitting element, 270G: light-emitting element, 270PD: light-receiving element, 270R: light-emitting element, 271: pixel electrode , 273: active layer, 275: common electrode, 280A: display device, 280B: display device, 280C: display device, 281: hole injection layer, 282: hole transport layer, 283B: light emitting layer, 283G: light emitting layer, 283R: light emitting layer, 283: light emitting layer, 284: electron transport layer, 285: electron injection layer, 6500: electronic device, 6501: housing, 6502: display unit, 6503: power button, 6504: button, 6505: speaker, 6506: microphone, 6507: camera, 6508: light source, 6510: protective member, 6511 : Display panel, 6512: Optical component, 6513: Touch sensor panel, 6515: FPC, 6516: IC, 6517: Printed circuit board, 6518: Battery, 7000: Display unit, 7100: Television device, 7101: Housing, 7103: Stand, 7111: Remote control device, 7200: Notebook personal computer, 7211: Housing, 7212: Keyboard, 7213: Pointing device, 7214: External connection port, 7300: Digital signage, 7301: Housing, 73 03: Speaker, 7311: Information terminal, 7400: Digital signage, 7401: Pillar, 7411: Information terminal, 9000: Housing, 9001: Display, 9003: Speaker, 9005: Operation keys, 9006: Connection terminal, 9007: Sensor, 9008: Microphone, 9050: Icon, 9051: Information, 9052: Information, 9053: Information, 9054: Information, 9055: Hinge, 9101: Portable information terminal, 9102: Portable information terminal, 9200: Portable information terminal, 9201: Portable information terminal,

Claims

[Claim 1] An electronic device having a control unit, a storage unit, and a display unit, the display unit has a function of displaying a first icon and a function of acquiring first fingerprint information in a display area of ​​the first icon; the storage unit has a function of storing second fingerprint information, The control unit a function of matching the first fingerprint information with the second fingerprint information; a function of executing a first process associated with the first icon when the first fingerprint information and the second fingerprint information match; and a function of executing a second process when the first fingerprint information and the second fingerprint information do not match.

Images