Semiconductor device

Abstract

To suppress an oscillation phenomenon occurring when a plurality of switching elements are operated simultaneously.SOLUTION: A semiconductor device includes: a first switching element 61A including a first gate electrode G1; a second switching element 62A including a second gate electrode G2 and being connected in parallel to the first switching element; a first gate interconnect 40; a first gate connection member 71A connecting the first gate electrode G1 to the first gate interconnect 40; and a second gate connection member 72A connecting the second gate electrode G2 to the first gate interconnect 40. The first gate interconnect 40 includes a first interconnect portion 41 and a second interconnect portion 42 which extend in a Y direction, and a joint portion 45 joining the first interconnect portion 41 and the second interconnect portion 42. The first gate connection member 71A is connected to a part of the first interconnect portion 41 distant from the joint portion 45 in the Y direction. The second gate connection member 72A is connected to a part of the second interconnect portion 42 distant from the joint portion 45 in the Y direction.SELECTED DRAWING: Figure 7

Description

[Technical Field]

[0001] The present disclosure relates to semiconductor devices. [Background technology]

[0002] Patent Document 1 discloses a power module in which a half-bridge circuit is formed by a plurality of first switching elements and a plurality of second switching elements. The plurality of first switching elements are connected in parallel with each other. The plurality of second switching elements are connected in parallel with each other. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Publication No. 2022-79670

[0004] [overview] It is desirable to suppress the oscillation phenomenon that occurs when a plurality of switching elements connected in parallel are operated simultaneously.

[0005] A semiconductor device according to one aspect of the present disclosure includes: a first switching element including a first gate electrode; a second switching element including a second gate electrode, spaced apart from the first switching element in a first direction and connected in parallel to the first switching element; a gate wiring arranged between the first switching element and the second switching element in the first direction; a first gate connecting member connecting the first gate electrode and the gate wiring; and a second gate connecting member connecting the second gate electrode and the gate wiring, wherein the gate wiring is a gate electrode of the first switching element. The semiconductor device includes a first wiring portion extending in a second direction intersecting the first direction in a planar view seen from the thickness direction, a second wiring portion arranged closer to the second switching element in the first direction relative to the first wiring portion and extending in the second direction in the planar view, and a connecting portion connecting the first wiring portion and the second wiring portion, wherein the first gate connecting member is connected to a position of the first wiring portion spaced apart from the connecting portion in the second direction, and the second gate connecting member is connected to a position of the second wiring portion spaced apart from the connecting portion in the second direction. [Brief explanation of the drawings]

[0006] [Figure 1] FIG. 1 is a schematic perspective view of an exemplary semiconductor device according to the first embodiment. [Figure 2] FIG. 2 is a schematic plan view of the inside of the semiconductor device of FIG. [Figure 3] FIG. 3 is a schematic cross-sectional view of the semiconductor device taken along line F3-F3 in FIG. [Figure 4] FIG. 4 is a schematic cross-sectional view of the semiconductor device taken along line F4-F4 in FIG. [Figure 5] FIG. 5 is a schematic cross-sectional view of the semiconductor device taken along line F5-F5 in FIG. [Figure 6] FIG. 6 is a schematic cross-sectional view of the semiconductor device taken along line F6-F6 in FIG. [Figure 7] FIG. 7 is a schematic plan view showing an enlarged portion of FIG. [Figure 8]FIG. 8 is a schematic plan view showing another enlarged portion of FIG. [Figure 9] FIG. 9 is a schematic plan view showing an enlarged view of the first gate wiring in FIG. [Figure 10] FIG. 10 is a schematic circuit diagram of an exemplary semiconductor device according to the first embodiment. [Figure 11] FIG. 11 is a schematic plan view of the interior of an exemplary semiconductor device according to the second embodiment. [Figure 12] FIG. 12 is a schematic plan view showing an enlarged portion of FIG. [Figure 13] FIG. 13 is a schematic plan view showing another enlarged portion of FIG. [Figure 14] FIG. 14 is a schematic plan view of the interior of an exemplary semiconductor device according to the third embodiment. [Figure 15] FIG. 15 is a schematic plan view showing an enlarged portion of FIG. [Figure 16] FIG. 16 is a schematic plan view of the interior of an exemplary semiconductor device according to the fourth embodiment. [Figure 17] FIG. 17 is a schematic cross-sectional view of the semiconductor device taken along line F17-F17 in FIG. [Figure 18] FIG. 18 is a schematic circuit diagram of an inverter device including a semiconductor device. [Figure 19] FIG. 19 is a schematic plan view showing an enlarged view of the first gate wiring and its periphery in the semiconductor device of the modified example. [Figure 20] FIG. 20 is a schematic plan view showing an enlarged view of the first gate wiring and its periphery in the semiconductor device of the modified example. [Figure 21] FIG. 21 is a schematic plan view showing an enlarged view of the first gate wiring and its periphery in a semiconductor device according to a modified example. [Figure 22] FIG. 22 is a schematic plan view showing an enlarged view of the first gate wiring and its periphery in the semiconductor device of the modified example. [Figure 23] FIG. 23 is a schematic plan view showing an enlarged view of the first gate wiring and its periphery in the semiconductor device of the modified example.

[0007] [Detailed explanation] Hereinafter, several embodiments of semiconductor devices according to the present disclosure will be described with reference to the accompanying drawings. Note that for simplicity and clarity of description, components shown in the drawings are not necessarily drawn to scale. Also, hatching lines may be omitted in cross-sectional views to facilitate understanding. The accompanying drawings merely illustrate embodiments of the present disclosure and should not be considered to limit the present disclosure.

[0008] The following detailed description includes devices, systems, and methods embodying exemplary embodiments of the present disclosure. This detailed description is merely illustrative in nature and is not intended to limit the embodiments of the present disclosure or the application and uses of such embodiments.

[0009] The phrase "at least one" used in this disclosure means "one or more" of the desired options. As an example, the phrase "at least one" used in this disclosure means "only one option" or "both of two options" when the number of options is two. As another example, the phrase "at least one" used in this disclosure means "only one option" or "any combination of two or more options" when the number of options is three or more.

[0010] As used in this disclosure, "the dimensions (depth, width, length) of A are equal to the dimensions (depth, width, length) of B" or "the dimensions (depth, width, length) of A and the dimensions (depth, width, length) of B are equal to each other" also includes a relationship in which the difference between the dimensions (depth, width, length) of A and the dimensions (depth, width, length) of B is, for example, within 10% of the dimensions (depth, width, length) of A.

[0011] First Embodiment [Configuration of semiconductor device] The configuration of a semiconductor device 10 according to a first embodiment will be described with reference to FIGS. 1 to 9. FIG. 1 schematically illustrates a perspective view of the semiconductor device 10. FIG. 2 schematically illustrates the internal planar structure of the semiconductor device 10. FIG. 3 schematically illustrates a cross-sectional structure of the semiconductor device 10 taken along line F3-F3 in FIG. 2. FIG. 4 schematically illustrates a cross-sectional structure of the semiconductor device 10 taken along line F4-F4 in FIG. 2. FIG. 5 schematically illustrates a cross-sectional structure of the semiconductor device 10 taken along line F5-F5 in FIG. 2. FIG. 6 schematically illustrates a cross-sectional structure of the semiconductor device 10 taken along line F6-F6 in FIG. 2. FIG. 7 schematically illustrates an enlarged planar structure of a portion of FIG. 2. FIG. 8 schematically illustrates an enlarged planar structure of a portion of FIG. 2 different from that of FIG. 7. FIG. 9 schematically illustrates a planar structure of a first gate wiring 40, which will be described later.

[0012] (Appearance of semiconductor device) 1, the semiconductor device 10 includes a package body 100, and a first power supply terminal 11, a second power supply terminal 12, an output terminal 13, a first gate terminal 14, and a second gate terminal 15, which protrude from the package body 100. Here, both the first gate terminal 14 and the second gate terminal 15 are examples of "gate terminals."

[0013] The package body 100 is made of an insulating material. An example of the insulating material is a resin material such as epoxy resin. The package body 100 has, for example, a rectangular flat plate shape with the Z direction as its thickness direction. Hereinafter, the view of the semiconductor device 10 from the Z direction will be referred to as a "planar view." Furthermore, directions perpendicular to the Z direction will be referred to as the "X direction" and the "Y direction." Here, the X direction is an example of a "first direction," and the Y direction is an example of a "second direction."

[0014] The package body 100 has a rectangular shape with the Y direction as the longitudinal direction and the X direction as the lateral direction in a plan view. The package body 100 includes a first surface 101, a second surface 102 opposite the first surface 101, and first to fourth side surfaces 103 to 106 as four side surfaces connecting the first surface 101 and the second surface 102. Both the first surface 101 and the second surface 102 are formed by planes that are orthogonal to the Z direction, for example. The first side surface 103 and the second side surface 104 form both end surfaces of the package body 100 in the X direction. The third side surface 105 and the fourth side surface 106 form both end surfaces of the package body 100 in the Y direction.

[0015] The first power supply terminal 11 and the second power supply terminal 12 protrude from a third side surface 105 of the package body 100. The output terminal 13 protrudes from a fourth side surface 106 of the package body 100. In other words, the first power supply terminal 11 and the second power supply terminal 12 protrude from opposite sides of the package body 100, and the output terminal 13 protrude from opposite sides of the package body 100. The first power supply terminal 11 and the second power supply terminal 12 are arranged side by side in the X direction in a plan view. Each of the first power supply terminal 11, the second power supply terminal 12, and the output terminal 13 has a rectangular plate shape in a plan view. Both the first gate terminal 14 and the second gate terminal 15 protrude from the first surface 101. The first gate terminal 14 and the second gate terminal 15 are pin-shaped extending in the Z direction.

[0016] Each of the first power supply terminal 11, the second power supply terminal 12, the output terminal 13, the first gate terminal 14, and the second gate terminal 15 is made of a conductive material. Examples of conductive materials include aluminum (Al) and copper (Cu). The conductive material making up the first gate terminal 14 and the second gate terminal 15 may be the same as or different from the conductive material making up the first power supply terminal 11, the second power supply terminal 12, and the output terminal 13. In one example, the first gate terminal 14 and the second gate terminal 15 are made of a material containing Al, and the first power supply terminal 11, the second power supply terminal 12, and the output terminal 13 are made of a material containing Cu. The conductive material is not limited to Al and Cu and may be any material.

[0017] (Internal structure of semiconductor device) As shown in FIG. 2, the semiconductor device 10 includes an insulating substrate 20, a plurality of switching elements 60U and 60L mounted on the insulating substrate 20, first to fourth gate connecting members 71A-74A, 71B-74B, first source connecting members 81A, 81B, and second source connecting members 82A, 82B. The semiconductor device 10 configures an inverter circuit by connecting the switching element 60U and the switching element 60L in series. The switching element 60U configures an upper arm, and the switching element 60L configures a lower arm. Therefore, the switching element 60U is an example of an "upper arm switching element," and the switching element 60L is an example of a "lower arm switching element."

[0018] The insulating substrate 20 has a rectangular flat plate shape with its thickness direction in the Z direction. In the example shown in Fig. 2, the insulating substrate 20 has a rectangular shape with its longitudinal direction in the Y direction and its lateral direction in the X direction in a plan view. The insulating substrate 20 is made of ceramics such as silicon nitride (Si3N4) or alumina (Al2O3).

[0019] Insulating substrate 20 includes first substrate surface 21, second substrate surface 22 opposite first substrate surface 21, and first to fourth substrate side surfaces 23 to 26 as four substrate side surfaces connecting first substrate surface 21 and second substrate surface 22. First substrate side surface 23 and second substrate side surface 24 constitute both end surfaces of insulating substrate 20 in the X direction. Third substrate side surface 25 and fourth substrate side surface 26 constitute both end surfaces of insulating substrate 20 in the Y direction.

[0020] As shown in FIG. 3, a heat sink 27 is bonded to the second substrate surface 22 of the insulating substrate 20. The heat sink 27 is exposed from the second surface 102 of the package body 100. The heat sink 27 is made of a material containing, for example, Cu and Al. In one example, the heat sink 27 is made of a material containing Cu. The heat sink 27 has a rectangular flat plate shape with the thickness direction aligned in the Z direction. The heat sink 27 has a rectangular shape that is slightly smaller than the insulating substrate 20 in plan view. In the example shown in FIG. 3, the thickness of the heat sink 27 is thicker than the thickness of the insulating substrate 20. The thickness of the heat sink 27 can be changed as desired depending on the heat dissipation performance.

[0021] As shown in FIGS. 2 to 4, the semiconductor device 10 includes first to third power supply wirings 31 to 33, a first gate wiring 40, and a second gate wiring 50 provided on a first substrate surface 21 of an insulating substrate 20. The first to third power supply wirings 31 to 33, the first gate wiring 40, and the second gate wiring 50 are made of a material containing, for example, Al and Cu. In one example, the first to third power supply wirings 31 to 33, the first gate wiring 40, and the second gate wiring 50 are made of a material containing Cu. Here, both the first gate wiring 40 and the second gate wiring 50 are examples of "gate wirings."

[0022] As shown in FIG. 2, the first power supply wiring 31 is a wiring that is electrically connected to the first power supply terminal 11. The first power supply wiring 31 is arranged on the first substrate surface 21 closer to the third substrate side surface 25 in a plan view. The first power supply wiring 31 includes a terminal connection portion 31A to which the first power supply terminal 11 is connected, and an element mounting portion 31B on which a plurality of switching elements 60U are mounted. In the example shown in FIG. 2, the terminal connection portion 31A and the element mounting portion 31B are integrated. Here, since a plurality of switching elements 60U are mounted on the first power supply wiring 31, the first power supply wiring 31 is an example of an "upper arm power supply wiring."

[0023] The terminal connection portion 31A and the element mounting portion 31B are aligned in the Y direction. In a plan view, the terminal connection portion 31A is disposed on the first substrate surface 21 closer to the second substrate side surface 24 and the third substrate side surface 25. In a plan view, the element mounting portion 31B is disposed closer to the fourth substrate side surface 26 than the terminal connection portion 31A. The element mounting portion 31B includes a recess 31C that opens toward the fourth substrate side surface 26. In one example, the recess 31C has a rectangular recessed shape in a plan view. The element mounting portion 31B includes a first mounting portion 31D and a second mounting portion 31E provided on both sides of the recess 31C in the X direction. The first mounting portion 31D and the second mounting portion 31E each extend in the Y direction. Here, the recess 31C is an example of a "first recess."

[0024] The second power supply wiring 32 is a wiring electrically connected to the second power supply terminal 12. The second power supply wiring 32 includes a terminal connection portion 32A to which the second power supply terminal 12 is connected, and an element connection portion 32B to which the multiple switching elements 60L are electrically connected. In the example shown in Fig. 2, the terminal connection portion 32A and the element connection portion 32B are integrated.

[0025] The terminal connection portion 32A is arranged alongside the terminal connection portion 31A of the first power supply wiring 31 in the X direction in a plan view. The terminal connection portion 32A is arranged closer to the first substrate side surface 23 than the terminal connection portion 31A. The terminal connection portion 32A and the terminal connection portion 31A are located at different positions in the Z direction. The terminal connection portion 31A is arranged at a position spaced apart from the first substrate surface 21 in the Z direction. The terminal connection portion 31A is in contact with the first substrate surface 21.

[0026] The element connection portion 32B includes a first connection portion 32C and a second connection portion 32D that are spaced apart from each other in the X direction, and a linking portion 32E that links the first connection portion 32C and the second connection portion 32D. Each of the first connection portion 32C, the second connection portion 32D, and the linking portion 32E is in contact with the first substrate surface 21. Each of the first connection portion 32C and the second connection portion 32D is strip-shaped and extends in the Y direction in a plan view.

[0027] The first connection portion 32C and the second connection portion 32D are spaced apart from each other in the X direction. Each of the first connection portion 32C and the second connection portion 32D has a strip shape extending in the Y direction in a plan view. Each of the first connection portion 32C and the second connection portion 32D extends from the coupling portion 32E to the same position in the Y direction as a third switching element 63B and a fourth switching element 64B, which will be described later.

[0028] The first connection portion 32C is arranged closer to the first substrate side surface 23 than the terminal connection portion 32A. The first connection portion 32C is arranged so as to be adjacent to the first mounting portion 31D of the first power supply wiring 31 in the X direction. The first connection portion 32C is arranged closer to the first substrate side surface 23 than the first mounting portion 31D.

[0029] The second connection portion 32D is arranged closer to the second substrate side surface 24 than the terminal connection portion 32A. The second connection portion 32D is arranged closer to the second substrate side surface 24 than the terminal connection portion 31A. The second connection portion 32D is arranged so as to be adjacent to the second mounting portion 31E of the first power supply wiring 31 in the X direction. The second connection portion 32D is arranged closer to the second substrate side surface 24 than the second mounting portion 31E.

[0030] The connecting portion 32E has a strip shape extending in the X direction. The connecting portion 32E is connected to the end portions of the first connecting portion 32C and the second connecting portion 32D that are closer to the third substrate side surface 25. The connecting portion 32E is arranged closer to the third substrate side surface 25 than the element mounting portion 31B of the first power supply wiring 31. The connecting portion 32E includes a portion that overlaps with the terminal connecting portion 31A of the first power supply wiring 31 in a plan view. The connecting portion 32E is arranged closer to the first substrate surface 21 than the terminal connecting portion 31A in the Z direction and is spaced apart from the terminal connecting portion 31A. In other words, the terminal connecting portion 31A is provided so as to be spaced apart from the first substrate surface 21 in the Z direction. The connecting portion 32E is connected to the terminal connecting portion 32A.

[0031] The third power supply wiring 33 is a wiring electrically connected to the output terminal 13. The third power supply wiring 33 is arranged on the first substrate surface 21 closer to the fourth substrate side surface 26 in a plan view. The third power supply wiring 33 includes a terminal connection portion 33A to which the output terminal 13 is connected, an element mounting portion 33B on which multiple switching elements 60L are mounted, and an element connection portion 33C electrically connected to multiple switching elements 60U. In the example shown in FIG. 2, the terminal connection portion 33A, the element mounting portion 33B, and the element connection portion 33C are integrated. Here, since multiple switching elements 60L are mounted on the third power supply wiring 33, the third power supply wiring 33 is an example of a "power supply wiring for the lower arm." Furthermore, the element connection portion 33C is an example of a "connection portion."

[0032] The terminal connection portion 33A, the element mounting portion 33B, and the element connection portion 33C are arranged side by side in the Y direction. The terminal connection portion 33A is arranged closer to the fourth substrate side surface 26 than the element mounting portion 33B and the element connection portion 33C. The terminal connection portion 33A is arranged at the end of the first substrate surface 21 closer to the fourth substrate side surface 26 and in the center in the X direction.

[0033] The element mounting portion 33B is disposed closer to the fourth substrate side surface 26 than the element connecting portion 33C. Therefore, it can be said that the element mounting portion 33B is disposed between the terminal connecting portion 33A and the element connecting portion 33C in the Y direction. The element mounting portion 33B is disposed closer to the fourth substrate side surface 26 than the element mounting portion 31B of the first power supply wiring 31. The element mounting portion 33B is disposed between the first connecting portion 32C and the second connecting portion 32D of the second power supply wiring 32 in the X direction.

[0034] The element mounting portion 33B includes an opening 33D provided in the center in the X direction. The opening 33D extends in the Y direction in a plan view. The element mounting portion 33B includes a first mounting portion 33E and a second mounting portion 33F provided on both sides of the opening 33D in the X direction. The first mounting portion 33E is located closer to the first substrate side surface 23 than the opening 33D. The second mounting portion 33F is located closer to the second substrate side surface 24 than the opening 33D. The first mounting portion 33E is located adjacent to the first connection portion 32C of the second power supply wiring 32 in the X direction. The second mounting portion 33F is located adjacent to the second connection portion 32D of the second power supply wiring 32 in the X direction.

[0035] The element connection portion 33C is disposed in the recess 31C of the element mounting portion 31B of the first power supply wiring 31 in a plan view. The element connection portion 33C extends in the Y direction. The element connection portion 33C includes a recess 33G that opens toward the third substrate side surface 25 in a plan view. The element connection portion 33C includes a first connection portion 33H and a second connection portion 33J that form the recess 33G and are disposed apart from each other in the X direction. The first connection portion 33H is disposed closer to the first substrate side surface 23 than the second connection portion 33J. The first connection portion 33H is disposed closer to the second substrate side surface 24 than the first mounting portion 31D of the first power supply wiring 31. The second connection portion 33J is disposed closer to the first substrate side surface 23 than the second mounting portion 31E of the first power supply wiring 31. Both the first connection portion 33H and the second connection portion 33J are strip-shaped and extend in the Y direction in a plan view. Here, the recess 33G is an example of a "second recess."

[0036] The first gate wiring 40 is a wiring that is electrically connected to the first gate terminal 14. The first gate wiring 40 is arranged in the recess 31C of the first power supply wiring 31 in a plan view. The first gate wiring 40 is arranged in the recess 33G of the element connection portion 33C of the third power supply wiring 33 in a plan view. That is, the first gate wiring 40 is arranged in a region surrounded by the recesses 31C and 33G in a plan view. The first connection portion 33H and the second connection portion 33J are arranged dispersedly on both sides of the first gate wiring 40 in the X direction.

[0037] The second gate wiring 50 is a wiring that is electrically connected to the second gate terminal 15. In plan view, the second gate wiring 50 is disposed within the opening 33D of the third power supply wiring 33. The detailed configurations of the first gate wiring 40 and the second gate wiring 50 will be described later.

[0038] The multiple switching elements 60U are switching elements mounted on the first power supply wiring 31. The multiple switching elements 60U include a first switching element 61A, a second switching element 62A, a third switching element 63A, and a fourth switching element 64A. The first to fourth switching elements 61A to 64A include, for example, MISFETs (Metal Insulation Semiconductor Field Effect Transistors) provided on a silicon (Si) substrate, a silicon carbide (SiC) substrate, or a wide-gap semiconductor substrate. In one example, the first to fourth switching elements 61A to 64A are the same switching elements. In one example, the first to fourth switching elements 61A to 64A are configured as vertical transistors. The first to fourth switching elements 61A to 64A have a rectangular flat plate shape with the Z direction as the thickness direction. Therefore, a plan view is, for example, a view from the thickness direction of the first switching element 61A. 2, each of the first to fourth switching elements 61A to 64A is square in plan view. The shapes of the first to fourth switching elements 61A to 64A in plan view can be changed as desired. For example, the shapes of the first to fourth switching elements 61A to 64A in plan view may be rectangular with the Y direction as the longitudinal direction and the X direction as the lateral direction.

[0039] 2, 3, and 7, the first switching element 61A is mounted on a first mounting portion 31D of the first power supply wiring 31. More specifically, the first switching element 61A is joined to the first mounting portion 31D by a conductive bonding material SD.

[0040] The first switching element 61A includes a first surface 61S and a first back surface 61R opposite to the first surface 61S. The first switching element 61A includes a first gate electrode G1 and a first source electrode S1 provided on the first surface 61S, and a first drain electrode D1 provided on the first back surface 61R. The first back surface 61R of the first switching element 61A is joined to the first mounting portion 31D by a conductive bonding material SD. Therefore, the first drain electrode D1 of the first switching element 61A is electrically connected to the first mounting portion 31D (first power supply wiring 31). Here, the first surface 61S is an example of a "first element surface."

[0041] The first gate electrode G1 is provided at the center of the first surface 61S in the X direction and at an end portion in the Y direction. In the example shown in FIG. 2, the first switching element 61A is arranged in an orientation such that the first gate electrode G1 is located at an end portion of the first surface 61S closer to the third substrate side surface 25. The position of the first gate electrode G1 can be changed as desired. In one example, the first gate electrode G1 may be provided at any of the four corner portions of the first surface 61S.

[0042] The first gate electrode G1 is electrically connected to the first gate wiring 40 by a first gate connection member 71A. The first gate connection member 71A is, for example, a bonding wire. The first gate connection member 71A is made of a conductive material such as Al, Cu, or gold (Au).

[0043] The second switching element 62A is mounted on the second mounting portion 31E of the first power supply wiring 31. More specifically, the second switching element 62A is joined to the second mounting portion 31E with a conductive bonding material SD. In the example shown in Fig. 2, the first switching element 61A and the second switching element 62A are arranged at the same position in the Y direction and spaced apart from each other in the X direction.

[0044] The second switching element 62A includes a second surface 62S and a second back surface 62R opposite to the second surface 62S. The second switching element 62A includes a second gate electrode G2 and a second source electrode S2 provided on the second surface 62S, and a second drain electrode D2 provided on the second back surface 62R. Here, the second surface 62S is an example of a "second element surface."

[0045] A second back surface 62R of the second switching element 62A is joined to the second mounting portion 31E with a conductive bonding material SD. Therefore, the second drain electrode D2 of the second switching element 62A is electrically connected to the second mounting portion 31E (first power supply wiring 31). Because the first switching element 61A is mounted on the first mounting portion 31D and the second switching element 62A is mounted on the second mounting portion 31E, it can be said that the first gate wiring 40 is disposed between the first switching element 61A and the second switching element 62A in the X direction.

[0046] The second gate electrode G2 is provided at the center of the second surface 62S in the X direction and at an end portion in the Y direction. In the example shown in Fig. 2, the second switching element 62A is arranged in an orientation such that the second gate electrode G2 is located at an end portion of the second surface 62S closer to the third substrate side surface 25. The position of the second gate electrode G2 can be changed as desired. In one example, the second gate electrode G2 may be provided at any of the four corner portions of the second surface 62S.

[0047] The second gate electrode G2 is electrically connected to the first gate wiring 40 by a second gate connection member 72A. The second gate connection member 72A is, for example, a bonding wire. The second gate connection member 72A is made of a conductive material such as Al, Cu, or Au.

[0048] The first source electrode S1 of the first switching element 61A and the second source electrode S2 of the second switching element 62A are electrically connected to the third power supply wiring 33 by a first source connection member 81A. The first source connection member 81A can be considered a wire that connects the first source electrode S1, the second source electrode S2, and the third power supply wiring 33. The first source connection member 81A extends in the X direction in a plan view. More specifically, the first source connection member 81A can be divided into first to third portions in the X direction. The first portion is a portion of the first source connection member 81A that connects the first source electrode S1 and the first connection portion 33H of the third power supply wiring 33. The second portion is a portion that connects the first connection portion 33H and the second connection portion 33J of the third power supply wiring 33. The second portion straddles the first gate wiring 40. The third portion is a portion that connects the second connection portion 33J and the second source electrode S2. The first source connecting member 81A is, for example, a bonding wire. In one example, the wire diameter of the first source connecting member 81A is larger than the wire diameter of the first gate connecting member 71A and the wire diameter of the second gate connecting member 72A. The first source connecting member 81A is made of a conductive material such as Al, Cu, or Au.

[0049] As shown in FIGS. 2, 4, and 7, the third switching element 63A is mounted on the first mounting portion 31D. More specifically, the third switching element 63A is bonded to the first mounting portion 31D with a conductive bonding material SD. Therefore, the third switching element 63A is disposed closer to the first switching element 61A with respect to the first gate wiring 40 in the X direction. The third switching element 63A is disposed closer to the fourth substrate side surface 26 than the first switching element 61A on the first mounting portion 31D. The third switching element 63A is disposed at a position overlapping the first switching element 61A when viewed from the Y direction. In the example shown in FIG. 2, the third switching element 63A is disposed at the same position in the X direction as the first switching element 61A.

[0050] The third switching element 63A includes a third surface 63S and a third back surface 63R opposite to the third surface 63S. The third switching element 63A includes a third gate electrode G3 and a third source electrode S3 provided on the third surface 63S, and a third drain electrode D3 provided on the third back surface 63R. The third back surface 63R of the third switching element 63A is joined to the first mounting portion 31D by a conductive bonding material SD. Therefore, the third drain electrode D3 of the third switching element 63A is electrically connected to the first mounting portion 31D (first power supply wiring 31).

[0051] The third gate electrode G3 is provided at the center of the third surface 63S in the X direction and at an end portion in the Y direction. In the example shown in Fig. 2, the third switching element 63A is arranged in an orientation such that the third gate electrode G3 is located at an end portion of the third surface 63S closer to the fourth substrate side surface 26. The position of the third gate electrode G3 can be changed as desired. In one example, the third gate electrode G3 may be provided at any of the four corner portions of the third surface 63S.

[0052] The third gate electrode G3 is electrically connected to the first gate wiring 40 by a third gate connection member 73A. The third gate connection member 73A is, for example, a bonding wire. The third gate connection member 73A is made of a conductive material such as Al, Cu, or Au.

[0053] The fourth switching element 64A is mounted on the second mounting portion 31E. More specifically, the fourth switching element 64A is bonded to the second mounting portion 31E with a conductive bonding material SD. Therefore, the fourth switching element 64A is disposed closer to the second switching element 62A with respect to the first gate wiring 40 in the X direction. The fourth switching element 64A is disposed closer to the fourth substrate side surface 26 than the second switching element 62A on the second mounting portion 31E. The fourth switching element 64A is disposed at a position overlapping the second switching element 62A when viewed from the Y direction. In the example shown in FIG. 2, the fourth switching element 64A is disposed at the same position as the second switching element 62A in the X direction. In the example shown in FIG. 2, the third switching element 63A and the fourth switching element 64A are arranged at the same position as each other in the Y direction and spaced apart from each other in the X direction.

[0054] The fourth switching element 64A includes a fourth surface 64S and a fourth back surface 64R opposite to the fourth surface 64S. The fourth switching element 64A includes a fourth gate electrode G4 and a fourth source electrode S4 provided on the fourth surface 64S, and a fourth drain electrode D4 provided on the fourth back surface 64R. The fourth back surface 64R of the fourth switching element 64A is joined to the second mounting portion 31E with a conductive bonding material SD. Therefore, the fourth drain electrode D4 of the fourth switching element 64A is electrically connected to the second mounting portion 31E (first power supply wiring 31).

[0055] The fourth gate electrode G4 is provided at the center of the fourth surface 64S in the X direction and at an end portion in the Y direction. In the example shown in FIG. 2, the fourth switching element 64A is arranged in an orientation such that the fourth gate electrode G4 is located at an end portion of the fourth surface 64S closer to the fourth substrate side surface 26. The position of the fourth gate electrode G4 can be changed as desired. In one example, the fourth gate electrode G4 may be provided at any of the four corner portions of the fourth surface 64S.

[0056] The fourth gate electrode G4 is electrically connected to the first gate wiring 40 by a fourth gate connection member 74A. The fourth gate connection member 74A is, for example, a bonding wire. The fourth gate connection member 74A is made of a conductive material such as Al, Cu, or Au.

[0057] The third source electrode S3 of the third switching element 63A and the fourth source electrode S4 of the fourth switching element 64A are electrically connected to the third power supply wiring 33 by the second source connection member 82A. The second source connection member 82A can be considered a wire that connects the third source electrode S3, the fourth source electrode S4, and the third power supply wiring 33. The second source connection member 82A extends in the X direction in a plan view. More specifically, the second source connection member 82A can be divided into first to third portions in the X direction. The first portion is a portion of the second source connection member 82A that connects the third source electrode S3 and the first connection portion 33H of the third power supply wiring 33. The second portion is a portion that connects the first connection portion 33H and the second connection portion 33J of the third power supply wiring 33. The second portion straddles the first gate wiring 40. The third portion is a portion that connects the second connection portion 33J and the fourth source electrode S4. The second source connecting member 82A is, for example, a bonding wire. In one example, the wire diameter of the second source connecting member 82A is larger than the wire diameter of the third gate connecting member 73A and the wire diameter of the fourth gate connecting member 74A. The second source connecting member 82A is made of a conductive material such as Al, Cu, or Au.

[0058] The wire diameter and number of the first source connecting members 81A and the second source connecting members 82A can be changed as desired. In one example, a plurality of first source connecting members 81A and a plurality of second source connecting members 82A may be provided. In this case, the number of first source connecting members 81A and the number of second source connecting members 82A may be the same.

[0059] As shown in FIG. 2, the multiple switching elements 60L are switching elements mounted on the third power supply wiring 33. The multiple switching elements 60L can be considered to be switching elements that configure the lower arm of the inverter circuit. The multiple switching elements 60L include a first switching element 61B, a second switching element 62B, a third switching element 63B, and a fourth switching element 64B. The first to fourth switching elements 61B to 64B include, for example, MISFETs provided on a Si substrate, a SiC substrate, or a wide-gap semiconductor substrate. In one example, the first to fourth switching elements 61B to 64B are the same as each other. In one example, the first to fourth switching elements 61B to 64B are configured as vertical transistors. In the example shown in FIG. 2, the first to fourth switching elements 61B to 64B have the same configuration and size as the first to fourth switching elements 61A to 64A. For this reason, the first to fourth switching elements 61B to 64B are denoted by the same reference numerals as the first to fourth switching elements 61A to 64A, and detailed description thereof will be omitted. Here, the first switching element 61B is an example of a "fifth switching element," and the second switching element 62B is an example of a "sixth switching element." The first gate electrode G1 of the first switching element 61B is an example of a "fifth gate electrode," and the second gate electrode G2 of the second switching element 62B is an example of a "sixth gate electrode."

[0060] The second switching element 62A is connected in parallel with the first switching element 61A. The third switching element 63A is connected in parallel with the first switching element 61A and the second switching element 62A. The fourth switching element 64A is connected in parallel with the first switching element 61A, the second switching element 62A, and the third switching element 63A. The second switching element 62B is connected in parallel with the first switching element 61B. The third switching element 63B is connected in parallel with the first switching element 61B and the second switching element 62B. The fourth switching element 64B is connected in parallel with the first switching element 61B, the second switching element 62B, and the third switching element 63B.

[0061] 2, 5, and 8, the first switching element 61B is disposed closer to the fourth substrate side surface 26 than the third switching element 63A. The first switching element 61B is mounted on a first mounting portion 33E of the third power supply wiring 33. More specifically, the first switching element 61B is joined to the first mounting portion 33E by a conductive bonding material SD. As a result, the first drain electrode D1 of the first switching element 61B is electrically connected to the first mounting portion 33E (the third power supply wiring 33).

[0062] The first switching element 61B is disposed at a position overlapping with the third switching element 63A when viewed from the Y direction. In the example shown in Fig. 2, the first switching element 61B is disposed at a position partially overlapping with the third switching element 63A when viewed from the Y direction. The first switching element 61B is disposed shifted toward the second substrate side surface 24 relative to the third switching element 63A in the X direction. In the example shown in Fig. 2, the first switching element 61B is disposed in an orientation such that the first gate electrode G1 is located at an end of the first surface 61S closer to the third substrate side surface 25.

[0063] The first gate electrode G1 is electrically connected to the second gate wiring 50 by a first gate connection member 71B. The first gate connection member 71B is, for example, a bonding wire. The first gate connection member 71B is made of a conductive material such as Al, Cu, or Au.

[0064] The second switching element 62B is disposed closer to the fourth substrate side surface 26 than the fourth switching element 64A. The second switching element 62B is mounted on the second mounting portion 33F of the third power supply wiring 33. More specifically, the second switching element 62B is joined to the second mounting portion 33F by a conductive bonding material SD. As a result, the second drain electrode D2 of the second switching element 62B is electrically connected to the second mounting portion 33F (third power supply wiring 33).

[0065] The second switching element 62B is disposed at a position overlapping with the fourth switching element 64A when viewed from the Y direction. In the example shown in FIG. 2, the second switching element 62B is disposed at a position partially overlapping with the fourth switching element 64A when viewed from the Y direction. The second switching element 62B is disposed shifted in the X direction toward the first substrate side surface 23 relative to the fourth switching element 64A. In this manner, the distance in the X direction between the first switching element 61B and the second switching element 62B is shorter than the distance in the X direction between the third switching element 63A and the fourth switching element 64A. In the example shown in FIG. 2, the second switching element 62B is disposed in an orientation such that the second gate electrode G2 is located at an end of the second surface 62S closer to the third substrate side surface 25.

[0066] The second gate electrode G2 is electrically connected to the second gate wiring 50 by a second gate connection member 72B. The second gate connection member 72B is, for example, a bonding wire. The second gate connection member 72B is made of a conductive material such as Al, Cu, or Au.

[0067] The first source electrode S1 of the first switching element 61B and the second source electrode S2 of the second switching element 62B are electrically connected to the second power supply wiring 32 by a first source connection member 81B. The first source connection member 81B can be considered a wire that connects the first source electrode S1, the second source electrode S2, and the second power supply wiring 32. The first source connection member 81B extends in the X direction in a plan view. The first source connection member 81B can be divided into first to third portions in the X direction. The first portion is a portion of the first source connection member 81B that connects the first source electrode S1 and the first connection portion 32C of the second power supply wiring 32. The second portion is a portion that connects the first source electrode S1 and the second source electrode S2. The second portion straddles the second gate wiring 50. The third portion is a portion that connects the second source electrode S2 and the second connection portion 32D of the second power supply wiring 32. The first source connecting member 81B is, for example, a bonding wire. In one example, the wire diameter of the first source connecting member 81B is larger than the wire diameter of the first gate connecting member 71B and the wire diameter of the second gate connecting member 72B. The first source connecting member 81B is made of a conductive material such as Al, Cu, or Au.

[0068] 2, 6, and 8, the third switching element 63B is mounted on the first mounting portion 33E. More specifically, the third switching element 63B is bonded to the first mounting portion 33E with a conductive bonding material SD. Because the third back surface 63R of the third switching element 63B is bonded to the first mounting portion 33E with the conductive bonding material SD, the third drain electrode D3 of the third switching element 63B is electrically connected to the first mounting portion 33E (third power supply wiring 33).

[0069] The third switching element 63B is arranged closer to the fourth substrate side surface 26 than the first switching element 61B on the first mounting portion 33E. The third switching element 63B is arranged at a position overlapping with the first switching element 61B when viewed from the Y direction. In the example shown in FIG. 2, the third switching element 63B is arranged at the same position in the X direction as the first switching element 61B. In the example shown in FIG. 2, the third switching element 63B is arranged such that the third gate electrode G3 is located at an end of the third surface 63S closer to the third substrate side surface 25.

[0070] The third gate electrode G3 is electrically connected to the second gate wiring 50 by a third gate connection member 73B. The third gate connection member 73B is, for example, a bonding wire. The third gate connection member 73B is made of a conductive material such as Al, Cu, or Au.

[0071] The fourth switching element 64B is mounted on the second mounting portion 33F. More specifically, the fourth switching element 64B is bonded to the second mounting portion 33F with a conductive bonding material SD. Because the fourth back surface 64R of the fourth switching element 64B is bonded to the second mounting portion 33F with the conductive bonding material SD, the fourth drain electrode D4 of the fourth switching element 64B is electrically connected to the second mounting portion 33F (third power supply wiring 33).

[0072] The fourth switching element 64B is arranged on the second mounting portion 33F closer to the fourth substrate side surface 26 than the second switching element 62B. The fourth switching element 64B is arranged at a position overlapping with the second switching element 62B when viewed from the Y direction. In the example shown in FIG. 2, the fourth switching element 64B is arranged at the same position in the X direction as the second switching element 62B. In the example shown in FIG. 2, the fourth switching element 64B is arranged such that the fourth gate electrode G4 is located at the end of the fourth surface 64S closer to the third substrate side surface 25.

[0073] The fourth gate electrode G4 is electrically connected to the second gate wiring 50 by a fourth gate connection member 74B. The fourth gate connection member 74B is, for example, a bonding wire. The fourth gate connection member 74B is made of a conductive material such as Al, Cu, or Au.

[0074] The third source electrode S3 of the third switching element 63B and the fourth source electrode S4 of the fourth switching element 64B are electrically connected to the second power supply wiring 32 by the second source connection member 82B. The second source connection member 82B can be considered a wire that connects the third source electrode S3, the fourth source electrode S4, and the second power supply wiring 32. The second source connection member 82B extends in the X direction in a plan view. The second source connection member 82B can be divided into first to third portions in the X direction. The first portion is a portion of the second source connection member 82B that connects the third source electrode S3 and the first connection portion 32C of the second power supply wiring 32. The second portion is a portion that connects the third source electrode S3 and the fourth source electrode S4. The second portion straddles the second gate wiring 50. The third portion is a portion that connects the fourth source electrode S4 and the second connection portion 32D of the second power supply wiring 32. The second source connecting member 82B is, for example, a bonding wire. In one example, the wire diameter of the second source connecting member 82B is larger than the wire diameter of the third gate connecting member 73B and the wire diameter of the fourth gate connecting member 74B. The second source connecting member 82B is made of a conductive material such as Al, Cu, or Au.

[0075] (Gate wiring) The detailed configuration of the first gate wiring 40 and the second gate wiring 50 will be described with reference to FIGS.

[0076] 7, the first gate wiring 40 includes a first wiring portion 41, a second wiring portion 42, a third wiring portion 43, a fourth wiring portion 44, and a connecting portion 45. In the example shown in FIG. 7, the first wiring portion 41, the second wiring portion 42, the third wiring portion 43, the fourth wiring portion 44, and the connecting portion 45 are integrated.

[0077] The first wiring portion 41 and the second wiring portion 42 are spaced apart from each other in the X direction. The connecting portion 45 connects the first wiring portion 41 and the second wiring portion 42. Both the first wiring portion 41 and the second wiring portion 42 extend in the Y direction in a plan view. In the example shown in FIG. 7 , both the first wiring portion 41 and the second wiring portion 42 extend in the Y direction from the connecting portion 45. In one example, the length LY1 of the first wiring portion 41 in the Y direction is equal to the length LY2 of the second wiring portion 42 in the Y direction. In one example, the width W1 of the first wiring portion 41 and the width W2 of the second wiring portion 42 are equal to each other. In one example, the width W1 of the first wiring portion 41 and the width W2 of the second wiring portion 42 are smaller than the width W5 of the first connection portion 33H of the third power supply wiring 33. In one example, the width W1 of the first wiring portion 41 and the width W2 of the second wiring portion 42 are both smaller than the width of the connecting portion 45 (the dimension of the connecting portion 45 in the X direction).

[0078] Both the length LY1 in the Y direction of the first wiring portion 41 and the length LY2 in the Y direction of the second wiring portion 42 are longer than the distance DX1 in the X direction between the first wiring portion 41 and the second wiring portion 42. The length LY1 in the Y direction of the first wiring portion 41 is longer than the length SY1 in the Y direction of the first switching element 61A. Both the length LY2 in the Y direction of the second wiring portion 42 are longer than the length SY2 in the Y direction of the second switching element 62A.

[0079] Each of the first wiring portion 41 and the second wiring portion 42 includes a portion disposed between the first switching element 61A and the second switching element 62A in the X direction. The first wiring portion 41 is disposed closer to the first switching element 61A than the second wiring portion 42. The second wiring portion 42 is disposed closer to the second switching element 62A than the first wiring portion 41.

[0080] The first wiring portion 41 includes a tip portion 41A spaced apart from the connecting portion 45 in the Y direction. The tip portion 41A of the first wiring portion 41 is provided at one of both ends of the first wiring portion 41 in the Y direction, closer to the third substrate side surface 25. The second wiring portion 42 includes a tip portion 42A spaced apart from the connecting portion 45 in the Y direction. The tip portion 42A of the second wiring portion 42 is provided at one of both ends of the second wiring portion 42 in the Y direction, closer to the third substrate side surface 25. The tip portion 41A of the first wiring portion 41 and the tip portion 42A of the second wiring portion 42 are arranged at the same position in the Y direction. The tip portion 41A of the first wiring portion 41 and the tip portion 42A of the second wiring portion 42 are arranged at the same position in the Y direction as the first gate electrode G1 of the first switching element 61A and the second gate electrode G2 of the second switching element 62A in a plan view. Both the tip portion 41A of the first wiring portion 41 and the tip portion 42A of the second wiring portion 42 are arranged in a recess 31F provided in the bottom of the recess 31C of the element mounting portion 31B of the first power supply wiring 31 in a plan view.

[0081] Here, as shown in FIG. 7 , the tip end 41A of the first wiring portion 41 has a width larger than the width W1 of the first wiring portion 41. In other words, the width W1 of the first wiring portion 41 indicates the width of a portion of the first wiring portion 41 different from the tip end 41A. Therefore, it can be said that the width of the tip end 41A of the first wiring portion 41 is larger than the width W1 of a portion of the first wiring portion 41 closer to the connecting portion 45 than the tip end 41A. Furthermore, the tip end 42A of the second wiring portion 42 has a width larger than the width W2 of the second wiring portion 42. In other words, the width W2 of the second wiring portion 42 indicates the width of a portion of the second wiring portion 42 different from the tip end 42A. Therefore, it can be said that the width of the tip end 42A of the second wiring portion 42 is larger than the width W2 of a portion of the second wiring portion 42 closer to the connecting portion 45 than the tip end 42A of the second wiring portion 42. The tip 41A of the first wiring portion 41 is provided so that its width increases from a portion of the first wiring portion 41 having width W1 toward the first switching element 61A. The tip 42A of the second wiring portion 42 is provided so that its width increases from a portion of the second wiring portion 42 having width W2 toward the second switching element 62A.

[0082] The first gate connecting member 71A is connected to the tip portion 41A of the first wiring portion 41. The second gate connecting member 72A is connected to the tip portion 42A of the second wiring portion 42. Therefore, both the first gate connecting member 71A and the second gate connecting member 72A extend in the X direction in a plan view.

[0083] The third wiring portion 43 and the fourth wiring portion 44 are spaced apart from each other in the X direction. The connecting portion 45 connects the third wiring portion 43 and the fourth wiring portion 44. Both the third wiring portion 43 and the fourth wiring portion 44 extend in the Y direction in a plan view. In the example shown in FIG. 7, both the third wiring portion 43 and the fourth wiring portion 44 extend from the connecting portion 45 in the Y direction. The third wiring portion 43 and the fourth wiring portion 44 are spaced apart from the first wiring portion 41 and the second wiring portion 42 in the Y direction. Therefore, the connecting portion 45 is located between the first wiring portion 41 and the third wiring portion 43 in the Y direction and between the second wiring portion 42 and the fourth wiring portion 44 in the Y direction. The third wiring portion 43 and the fourth wiring portion 44 are located closer to the fourth substrate side surface 26 (see FIG. 2) than the first wiring portion 41 and the second wiring portion 42.

[0084] In one example, the length LY3 of the third wiring portion 43 in the Y direction is equal to the length LY4 of the fourth wiring portion 44 in the Y direction. In one example, the width W3 of the third wiring portion 43 and the width W4 of the fourth wiring portion 44 are equal to each other. In one example, the width W3 of the third wiring portion 43 and the width W4 of the fourth wiring portion 44 are smaller than the width W5 of the first connection portion 33H of the third power supply wiring 33. In one example, both the width W3 of the third wiring portion 43 and the width W4 of the fourth wiring portion 44 are smaller than the width of the coupling portion 45.

[0085] In one example, the length LY3 in the Y direction of the third wiring portion 43 is equal to the length LY1 in the Y direction of the first wiring portion 41. The length LY4 in the Y direction of the fourth wiring portion 44 is equal to the length LY2 in the Y direction of the second wiring portion 42. In the example shown in FIG. 7, the lengths LY1 to LY4 in the Y direction of the first to fourth wiring portions 41 to 44 are equal to one another.

[0086] Both the length LY3 in the Y direction of the third wiring portion 43 and the length LY4 in the Y direction of the fourth wiring portion 44 are longer than the distance DX2 between the third wiring portion 43 and the fourth wiring portion 44 in the X direction. This distance DX2 is equal to the distance DX1 between the first wiring portion 41 and the second wiring portion 42 in the X direction. The length LY3 in the Y direction of the third wiring portion 43 is longer than the length SY3 in the Y direction of the third switching element 63A. Both the length LY4 in the Y direction of the fourth wiring portion 44 is longer than the length SY4 in the Y direction of the fourth switching element 64A. Note that in the example shown in FIG. 7, the first to fourth switching elements 61A to 64A are equal in size, and therefore the lengths SY1 to SY4 are equal to each other. The width W3 of the third wiring portion 43 is equal to the width W1 of the first wiring portion 41. The width W4 of the fourth wiring portion 44 is equal to the width W2 of the second wiring portion 42. Therefore, the widths W1 to W4 of the first to fourth wiring portions 41 to 44 are equal to one another.

[0087] Each of the third wiring portion 43 and the fourth wiring portion 44 includes a portion disposed between the third switching element 63A and the fourth switching element 64A in the X direction. The third wiring portion 43 is disposed closer to the third switching element 63A than the fourth wiring portion 44. The fourth wiring portion 44 is disposed closer to the fourth switching element 64A than the third wiring portion 43.

[0088] The third wiring portion 43 includes a tip portion 43A spaced apart from the connecting portion 45 in the Y direction. The tip portion 43A of the third wiring portion 43 is provided at one of both ends of the third wiring portion 43 in the Y direction, closer to the fourth substrate side surface 26. The fourth wiring portion 44 includes a tip portion 44A spaced apart from the connecting portion 45 in the Y direction. The tip portion 44A of the fourth wiring portion 44 is provided at one of both ends of the fourth wiring portion 44 in the Y direction, closer to the fourth substrate side surface 26 (see FIG. 2). The tip portion 43A of the third wiring portion 43 and the tip portion 44A of the fourth wiring portion 44 are arranged at the same position in the Y direction. The tip portion 43A of the third wiring portion 43 and the tip portion 44A of the fourth wiring portion 44 are arranged at the same position in the Y direction as the third gate electrode G3 of the third switching element 63A and the fourth gate electrode G4 of the fourth switching element 64A in a plan view.

[0089] 7, the tip 43A of the third wiring portion 43 has a width greater than the width W3 of the third wiring portion 43. In other words, the width W3 of the third wiring portion 43 indicates the width of a portion of the third wiring portion 43 different from the tip 43A. Therefore, it can be said that the width of the tip 43A of the third wiring portion 43 is greater than the width W3 of a portion of the third wiring portion 43 closer to the connecting portion 45 than the tip 43A of the third wiring portion 43. Furthermore, the tip 44A of the fourth wiring portion 44 has a width greater than the width W4 of the fourth wiring portion 44. In other words, the width W4 of the fourth wiring portion 44 indicates the width of a portion of the fourth wiring portion 44 different from the tip 44A. Therefore, it can be said that the width of the tip 44A of the fourth wiring portion 44 is greater than the width W4 of a portion of the fourth wiring portion 44 closer to the connecting portion 45 than the tip 44A of the fourth wiring portion 44. The tip 43A of the third wiring portion 43 is provided so that its width increases from a portion of the third wiring portion 43 having width W3 toward the third switching element 63A. The tip 44A of the fourth wiring portion 44 is provided so that its width increases from a portion of the fourth wiring portion 44 having width W4 toward the fourth switching element 64A.

[0090] The third gate connecting member 73A is connected to the tip portion 43A of the third wiring portion 43. The fourth gate connecting member 74A is connected to the tip portion 44A of the fourth wiring portion 44. Therefore, both the third gate connecting member 73A and the fourth gate connecting member 74A extend in the X direction in a plan view.

[0091] The connecting portion 45 connects the first wiring portion 41 and the second wiring portion 42. It can be said that the first wiring portion 41 and the second wiring portion 42 extend from the connecting portion 45 toward the fourth substrate side surface 26. In addition, the connecting portion 45 connects the third wiring portion 43 and the fourth wiring portion 44. It can be said that the third wiring portion 43 and the fourth wiring portion 44 extend from the connecting portion 45 toward the third substrate side surface 25. The first gate terminal 14 is connected to the connecting portion 45. The first gate terminal 14 is disposed, for example, at the center of the connecting portion 45 in the X direction and the center of the connecting portion 45 in the Y direction.

[0092] 7, the first wiring portion 41 and the third wiring portion 43 are located at the same position in the X direction. The second wiring portion 42 and the fourth wiring portion 44 are located at the same position in the X direction. The first wiring portion 41 and the third wiring portion 43 are located closer to the center of the connecting portion 45 in the X direction than the end of the connecting portion 45 closer to the first substrate side surface 23. The second wiring portion 42 and the fourth wiring portion 44 are located closer to the center of the connecting portion 45 in the X direction than the end of the connecting portion 45 closer to the second substrate side surface 24. The distance between the first wiring portion 41 and the center of the first gate terminal 14 in the X direction, the distance between the third wiring portion 43 and the center of the first gate terminal 14 in the X direction, the distance between the second wiring portion 42 and the center of the first gate terminal 14 in the X direction, and the distance between the fourth wiring portion 44 and the center of the first gate terminal 14 in the X direction are all equal.

[0093] 7, the length LY1 in the Y direction of the first wiring portion 41 is longer than the distance GE1 in the X direction between the first gate electrode G1 of the first switching element 61A and the tip end 41A of the first wiring portion 41. The length LY1 in the Y direction of the first wiring portion 41 is longer than the length of the first gate connecting member 71A in a plan view (the length in the direction in which the first gate connecting member 71A extends).

[0094] The length LY2 in the Y direction of the second wiring portion 42 is longer than the distance GE2 in the X direction between the second gate electrode G2 of the second switching element 62A and the tip end 42A of the second wiring portion 42. The length LY2 in the Y direction of the second wiring portion 42 is longer than the length of the second gate connecting member 72A in a plan view (the length in the direction in which the second gate connecting member 72A extends).

[0095] The length LY3 in the Y direction of the third wiring portion 43 is longer than the distance GE3 in the X direction between the third gate electrode G3 of the third switching element 63A and the tip end 43A of the third wiring portion 43. The length LY3 in the Y direction of the third wiring portion 43 is longer than the length of the third gate connecting member 73A in a plan view (the length in the direction in which the third gate connecting member 73A extends).

[0096] The length LY4 in the Y direction of the fourth wiring portion 44 is longer than the distance GE4 in the X direction between the fourth gate electrode G4 of the fourth switching element 64A and the tip end 44A of the fourth wiring portion 44. The length LY4 in the Y direction of the fourth wiring portion 44 is longer than the length of the fourth gate connecting member 74A in a plan view (the length in the direction in which the fourth gate connecting member 74A extends). Here, in the example shown in FIG. 7, the distances GE1 to GE4 are equal to one another. Furthermore, the lengths of the first to fourth gate connecting members 71A to 74A are equal to one another.

[0097] Due to such an arrangement of the first to fourth wiring portions 41 to 44 and the first gate terminal 14, the distance between the first wiring portion 41 and the first gate terminal 14, the distance between the second wiring portion 42 and the first gate terminal 14, the distance between the third wiring portion 43 and the first gate terminal 14, and the distance between the fourth wiring portion 44 and the first gate terminal 14 are all equal in plan view. That is, in plan view, the length of the current path between the first gate electrode G1 of the first switching element 61A and the first gate terminal 14, the length of the current path between the second gate electrode G2 of the second switching element 62A and the first gate terminal 14, the length of the current path between the third gate electrode G3 of the third switching element 63A and the first gate terminal 14, and the length of the current path between the fourth gate electrode G4 of the fourth switching element 64A and the first gate terminal 14 are all equal.

[0098] 7, the sum of the length LY1 in the Y direction of the first wiring unit 41, the length of the first gate connecting member 71A in a plan view (the length in the direction in which the first gate connecting member 71A extends), the length of the second gate connecting member 72A in a plan view (the length in the direction in which the second gate connecting member 72A extends), and the length LY2 in the Y direction of the second wiring unit 42 is greater than the first inter-gate distance GD1, which is the distance between the first gate electrode G1 of the first switching element 61A and the second gate electrode G2 of the second switching element 62A in a plan view. In other words, the length of the current path between the first gate electrode G1 and the second gate electrode G2 in a plan view is longer than the first inter-gate distance GD1.

[0099] Furthermore, the sum of the length LY3 in the Y direction of the third wiring portion 43, the length of the third gate connecting member 73A in a plan view (the length in the direction in which the third gate connecting member 73A extends), the length of the fourth gate connecting member 74A in a plan view (the length in the direction in which the fourth gate connecting member 74A extends), and the length LY4 in the Y direction of the fourth wiring portion 44 is greater than the second inter-gate distance GD2, which is the distance between the third gate electrode G3 of the third switching element 63A and the fourth gate electrode G4 of the fourth switching element 64A in a plan view. In other words, the length of the current path between the third gate electrode G3 and the fourth gate electrode G4 in a plan view is longer than the second inter-gate distance GD2.

[0100] Furthermore, the sum of the Y-direction length LY1 of the first wiring portion 41, the length of the first gate connecting member 71A in plan view, the Y-direction length of the coupling portion 45, the Y-direction length LY3 of the third wiring portion 43, and the length of the third gate connecting member 73A in plan view (the length in the direction in which the third gate connecting member 73A extends) is greater than the third inter-gate distance GD3, which is the distance between the first gate electrode G1 of the first switching element 61A and the third gate electrode G3 of the third switching element 63A in plan view. In other words, the length of the current path between the first gate electrode G1 and the third gate electrode G3 in plan view is longer than the third inter-gate distance GD3.

[0101] Furthermore, the sum of the length LY2 in the Y direction of the second wiring portion 42, the length of the second gate connecting member 72A in a plan view, the length of the coupling portion 45 in the Y direction, the length LY4 of the fourth wiring portion 44 in the Y direction, and the length of the fourth gate connecting member 74A in a plan view (the length in the direction in which the fourth gate connecting member 74A extends) is greater than the fourth inter-gate distance GD4, which is the distance between the second gate electrode G2 of the second switching element 62A and the fourth gate electrode G4 of the fourth switching element 64A in a plan view. In other words, the length of the current path between the second gate electrode G2 and the fourth gate electrode G4 in a plan view is longer than the fourth inter-gate distance GD4.

[0102] 7, the third inter-gate distance GD3 and the fourth inter-gate distance GD4 are equal to each other. The third inter-gate distance GD3 and the fourth inter-gate distance GD4 are greater than the first inter-gate distance GD1 and the second inter-gate distance GD2. Note that the first to fourth inter-gate distances GD1 to GD4 can be changed as desired in accordance with changes in the arrangement positions of the first to fourth switching elements 61A to 64A.

[0103] As shown in FIG. 9, the first gate line 40 includes a plurality of side surfaces. The first wiring portion 41 of the first gate wiring 40 includes a first side surface FA1, a second side surface FA2, and a third side surface FA3. The first side surface FA1 and the second side surface FA2 extend in the Y direction. The first side surface FA1 and the second side surface FA2 are spaced apart from each other in the X direction. The first side surface FA1 and the second side surface FA2 are connected to the connecting portion 45. The third side surface FA3 extends in the X direction. The third side surface FA3 forms the tip surface of the tip portion 41A of the first wiring portion 41. In the example shown in FIG. 9, the length of the first side surface FA1 in the Y direction is longer than the length of the second side surface FA2 in the Y direction. The first side surface FA1 is connected to the third side surface FA3.

[0104] The first wiring portion 41 includes a fourth side surface FA4 and a fifth side surface FA5 that form the tip portion 41A. The fourth side surface FA4 is connected to the second side surface FA2 and extends in the X direction. The fifth side surface FA5 connects the fourth side surface FA4 and the third side surface FA3. The fifth side surface FA5 extends in the Y direction.

[0105] The second wiring part 42 includes a first side surface FB1, a second side surface FB2, a third side surface FB3, a fourth side surface FB4, and a fifth side surface FB5. The first to fifth side surfaces FB1 to FB5 have the same configuration as the first to fifth side surfaces FA1 to FA5 of the first wiring part 41.

[0106] The third wiring part 43 includes a first side surface FC1, a second side surface FC2, a third side surface FC3, a fourth side surface FC4, and a fifth side surface FC5. The first to fifth side surfaces FC1 to FC5 have the same configuration as the first to fifth side surfaces FA1 to FA5 of the first wiring part 41.

[0107] The fourth wiring part 44 includes a first side surface FD1, a second side surface FD2, a third side surface FD3, a fourth side surface FD4, and a fifth side surface FD5. The first to fifth side surfaces FD1 to FD5 have the same configuration as the first to fifth side surfaces FA1 to FA5 of the first wiring part 41.

[0108] The connecting portion 45 includes a first connecting side surface FP1 and a second connecting side surface FP2. The first connecting side surface FP1 is a side surface that connects the first wiring portion 41 and the second wiring portion 42. More specifically, the first connecting side surface FP1 connects the first side surface FA1 of the first wiring portion 41 and the first side surface FB1 of the second wiring portion 42. The second connecting side surface FP2 is a side surface that connects the third wiring portion 43 and the fourth wiring portion 44. More specifically, the second connecting side surface FP2 connects the first side surface FC1 of the third wiring portion 43 and the first side surface FD1 of the fourth wiring portion 44. Both the first connecting side surface FP1 and the second connecting side surface FP2 extend in the X direction.

[0109] As shown in FIG. 8, the second gate wiring 50 includes a first wiring portion 51, a second wiring portion 52, a third wiring portion 53, a fourth wiring portion 54, and a connecting portion 55, similar to the first gate wiring 40. The second gate wiring 50 has the same shape as the first gate wiring 40. Therefore, the lengths and widths of the first to fourth wiring portions 51 to 54 are the same as the lengths LY1 to LY4 and widths W1 to W4 of the first to fourth wiring portions 41 to 44 (see FIG. 7 for both). In FIG. 8, the lengths of the first to fourth wiring portions 51 to 54 are indicated by lengths LY1 to LY4, similar to the first to fourth wiring portions 41 to 44. The widths of the first to fourth wiring portions 51 to 54 are indicated by widths W1 to W4, similar to the first to fourth wiring portions 41 to 44. Although not indicated by reference numerals in FIG. 8, the second gate wiring 50 includes multiple side surfaces, similar to the first gate wiring 40.

[0110] Furthermore, the distance between the first wiring portion 51 and the second wiring portion 52 in the X direction is equal to the distance DX1 between the first wiring portion 41 and the second wiring portion 42 in the X direction. Therefore, in FIG. 8, the distance between the first wiring portion 51 and the second wiring portion 52 in the X direction is indicated by the distance DX1. The distance between the third wiring portion 53 and the fourth wiring portion 54 in the X direction is equal to the distance DX2 between the third wiring portion 43 and the fourth wiring portion 44 in the X direction. Therefore, in FIG. 8, the distance between the third wiring portion 53 and the fourth wiring portion 54 in the X direction is indicated by the distance DX2.

[0111] The sizes of the first to fourth switching elements 61B to 64B are the same as those of the first to fourth switching elements 61A to 64A. For this reason, in Fig. 8, the lengths in the Y direction of the first to fourth switching elements 61B to 64B are indicated by lengths SY1 to SY4, similar to those of the first to fourth switching elements 61A to 64A. The relationship between the lengths LY1 to LY4 in the Y direction of the first to fourth wiring portions 51 to 54 and the lengths SY1 to SY4 of the first to fourth switching elements 61B to 64B is the same as the relationship between the lengths LY1 to LY4 in the Y direction of the first to fourth wiring portions 41 to 44 and the lengths SY1 to SY4 of the first to fourth switching elements 61A to 64A.

[0112] The first gate connecting member 71B connects the first gate electrode G1 of the first switching element 61B to the tip portion 51A of the first wiring portion 51. The second gate connecting member 72B connects the second gate electrode G2 of the second switching element 62B to the tip portion 52A of the second wiring portion 52. The third gate connecting member 73B connects the third gate electrode G3 of the third switching element 63B to the tip portion 53A of the third wiring portion 53. The fourth gate connecting member 74B connects the fourth gate electrode G4 of the fourth switching element 64B to the tip portion 54A of the fourth wiring portion 54.

[0113] 8, the arrangement of the first to fourth wiring portions 51 to 54 and the second gate terminal 15 is the same as the arrangement of the first to fourth wiring portions 41 to 44 and the first gate terminal 14 shown in FIG. 7. Therefore, in a plan view, the distance between the first wiring portion 51 and the second gate terminal 15, the distance between the second wiring portion 52 and the second gate terminal 15, the distance between the third wiring portion 53 and the second gate terminal 15, and the distance between the fourth wiring portion 54 and the second gate terminal 15 are all equal. That is, in a plan view, the length of the current path between the first gate electrode G1 and the second gate terminal 15 of the first switching element 61B, the length of the current path between the second gate electrode G2 and the second gate terminal 15 of the second switching element 62B, the length of the current path between the third gate electrode G3 and the second gate terminal 15 of the third switching element 63B, and the length of the current path between the fourth gate electrode G4 and the second gate terminal 15 of the fourth switching element 64B are all equal.

[0114] The lengths LY1 to LY4 of the first to fourth wiring portions 41 to 44, 51 to 54 and the widths W1 to W4 of the first to fourth wiring portions 41 to 44, 51 to 54 can be changed arbitrarily. At least one of the lengths LY1 to LY4 of the first to fourth wiring portions 41 to 44 may be different from the others. At least one of the lengths LY1 to LY4 of the first to fourth wiring portions 51 to 54 may be different from the others. At least one of the widths W1 to W4 of the first to fourth wiring portions 41 to 44 may be different from the others. At least one of the widths W1 to W4 of the first to fourth wiring portions 51 to 54 may be different from the others.

[0115] The length LY1 of the first wiring portion 41 may be equal to or less than the distance GE1 in the X direction between the first gate electrode G1 of the first switching element 61A and the tip 41A of the first wiring portion 41. The length LY2 of the second wiring portion 42 may be equal to or less than the distance GE2 in the X direction between the second gate electrode G2 of the second switching element 62A and the tip 42A of the second wiring portion 42. The length LY3 of the third wiring portion 43 may be equal to or less than the distance GE3 in the X direction between the third gate electrode G3 of the third switching element 63A and the tip 43A of the third wiring portion 43. The length LY4 of the fourth wiring portion 44 may be equal to or less than the distance GE4 in the X direction between the fourth gate electrode G4 of the fourth switching element 64A and the tip 44A of the fourth wiring portion 44.

[0116] The length LY1 of the first wiring portion 51 may be equal to or less than the distance GE1 in the X direction between the first gate electrode G1 of the first switching element 61B and the tip end 51A of the first wiring portion 51. The length LY2 of the second wiring portion 52 may be equal to or less than the distance GE2 in the X direction between the second gate electrode G2 of the second switching element 62B and the tip end 52A of the second wiring portion 52. The length LY3 of the third wiring portion 53 may be equal to or less than the distance GE3 in the X direction between the third gate electrode G3 of the third switching element 63B and the tip end 53A of the third wiring portion 53. The length LY4 of the fourth wiring portion 54 may be equal to or less than the distance GE4 in the X direction between the fourth gate electrode G4 of the fourth switching element 64B and the tip end 54A of the fourth wiring portion 54.

[0117] [Circuit configuration of semiconductor device] The circuit configuration of the semiconductor device 10 will be described with reference to FIG. 10, a plurality of switching elements 60U and a plurality of switching elements 60L are connected in series to form an inverter circuit. The first to fourth switching elements 61A to 64A of the plurality of switching elements 60U are connected in parallel. That is, the first to fourth drain electrodes D1 to D4 of the first to fourth switching elements 61A to 64A are electrically connected to each other, and the first to fourth source electrodes S1 to S4 of the first to fourth switching elements 61A to 64A are electrically connected to each other. In addition, the first to fourth switching elements 61B to 64B of the plurality of switching elements 60L are also connected in parallel.

[0118] The first to fourth drain electrodes D1 to D4 of the first to fourth switching elements 61A to 64A are electrically connected to a first power supply terminal 11. The first to fourth source electrodes S1 to S4 of the first to fourth switching elements 61B to 64B are electrically connected to a second power supply terminal 12. The first to fourth source electrodes S1 to S4 of the first to fourth switching elements 61A to 64A and the first to fourth drain electrodes D1 to D4 of the first to fourth switching elements 61B to 64B are electrically connected to each other and to an output terminal 13.

[0119] The first to fourth gate electrodes G1 to G4 of the first to fourth switching elements 61A to 64A are electrically connected to each other and to the first gate terminal 14. The first to fourth gate electrodes G1 to G4 of the first to fourth switching elements 61B to 64B are electrically connected to each other and to the second gate terminal 15.

[0120] In the semiconductor device 10, the first to fourth switching elements 61A to 64A and the first to fourth switching elements 61B to 64B are driven complementarily in response to gate signals supplied to the first gate terminal 14 and the second gate terminal 15 from a gate driver (not shown).

[0121] [Operation of the embodiment] The operation of the semiconductor device 10 of the first embodiment will be described. For example, when multiple switching elements 60U connected in parallel are repeatedly turned on and off simultaneously, an oscillation phenomenon in which the gate-source voltage Vgs oscillates when the multiple switching elements 60U are turned off may occur due to the gate stray inductance of the current path (second power supply wiring 32) in the semiconductor device 10. One method for reducing this oscillation phenomenon is to increase the gate stray inductance between the multiple switching elements 60U.

[0122] Therefore, in the semiconductor device 10 of the first embodiment, the length of the current path between the first to fourth gate electrodes G1 to G4 is increased in order to increase the gate stray inductance between the first to fourth switching elements 61A to 64A and the first to fourth gate electrodes G1 to G4 in the multiple switching elements 60U. Specifically, the first gate wiring 40 includes first to fourth wiring portions 41 to 44 extending in the Y direction and a coupling portion 45 coupling the first to fourth wiring portions 41 to 44. The first to fourth gate connecting members 71A to 74A individually connect the first to fourth gate electrodes G1 to G4 of the first to fourth switching elements 61A to 64A to the tip portions 41A to 44A of the first to fourth wiring portions 41 to 44. As a result, for example, the current path between the first gate electrode G1 and the second gate electrode G2 is composed of the first gate connection member 71A, the first wiring portion 41, the linking portion 45, the second wiring portion 42, and the second gate connection member 72A. Therefore, compared to a configuration in which the first gate electrode G1 and the second gate electrode G2 are directly connected by a gate connection member extending in the X direction in a plan view, the length of the current path between the first gate electrode G1 and the second gate electrode G2 can be increased. This increases the gate floating inductance between the first gate electrode G1 of the first switching element 61A and the second gate electrode G2 of the second switching element 62A. Similarly, the current path between the third gate electrode G3 of the third switching element 63A and the fourth gate electrode G4 of the fourth switching element 64A can also be increased, thereby increasing the gate floating inductance of the current path.

[0123] [Effects of the embodiment] According to the semiconductor device 10 of the first embodiment, the following effects can be obtained. (1-1) The semiconductor device 10 includes a first switching element 61A including a first gate electrode G1, a second switching element 62A including a second gate electrode G2, arranged spaced apart from the first switching element 61A in the X direction and connected in parallel to the first switching element 61A, a first gate wiring 40 arranged between the first switching element 61A and the second switching element 62A in the X direction, a first gate connecting member 71A connecting the first gate electrode G1 to the first gate wiring 40, and a second gate connecting member 72A connecting the second gate electrode G2 to the first gate wiring 40. The first gate wiring 40 includes a first wiring portion 41 extending in the Y direction in a plan view, a second wiring portion 42 arranged spaced apart from the first wiring portion 41 closer to the second switching element 62A in the X direction and extending in the Y direction in a plan view, and a connecting portion 45 connecting the first wiring portion 41 and the second wiring portion 42. The first gate connecting member 71A is connected to the first wiring portion 41 at a position spaced apart from the coupling portion 45 in the Y direction. The second gate connecting member 72A is connected to the second wiring portion 42 at a position spaced apart from the coupling portion 45 in the Y direction.

[0124] This configuration makes it possible to lengthen the current path between the first gate electrode G1 and the second gate electrode G2, thereby increasing the gate stray inductance and suppressing the occurrence of oscillation when the first switching element 61A and the second switching element 62A are simultaneously turned on and off.

[0125] (1-2) The first gate connection member 71A is connected to the tip 41A of the first wiring portion 41 that is separated from the coupling portion 45 in the Y direction. The second gate connection member 72A is connected to the tip 42A of the second wiring portion 42 that is separated from the coupling portion 45 in the Y direction.

[0126] This configuration can further lengthen the current path between the first gate electrode G1 and the second gate electrode G2, thereby further increasing the gate stray inductance and further suppressing the occurrence of oscillation.

[0127] (1-3) Both the length LY1 of the first wiring portion 41 in the Y direction and the length LY2 of the second wiring portion 42 in the Y direction are longer than the distance DX1 between the first wiring portion 41 and the second wiring portion 42 in the X direction.

[0128] This configuration makes it possible to lengthen the current path between the first gate electrode G1 and the second gate electrode G2 while suppressing an increase in size in the X direction of the semiconductor device 10. As a result, it is possible to suppress an increase in size of the semiconductor device 10 and also to suppress the occurrence of oscillation.

[0129] (1-4) The length LY1 in the Y direction of the first wiring portion 41 is longer than the length SY1 in the Y direction of the first switching element 61A. The length LY2 in the Y direction of the second wiring portion 42 is longer than the length SY2 in the Y direction of the second switching element 62A.

[0130] With this configuration, the current path between the first gate electrode G1 and the second gate electrode G2 can be made longer than when the length LY1 in the Y direction of the first wiring portion 41 is equal to or less than the length SY1 in the Y direction of the first switching element 61A and the length LY2 in the Y direction of the second wiring portion 42 is equal to or less than the length SY2 in the Y direction of the second switching element 62A. This increases the gate stray inductance, making it possible to suppress the occurrence of oscillation when the first switching element 61A and the second switching element 62A are turned on and off simultaneously.

[0131] (1-5) The sum of the Y-direction length LY1 of the first wiring portion 41, the length of the first gate connecting member 71A in a planar view, the Y-direction length LY2 of the second wiring portion 42, and the length of the second gate connecting member 72A in a planar view is greater than the first gate-to-gate distance GD1, which is the distance between the first gate electrode G1 and the second gate electrode G2 in a planar view.

[0132] With this configuration, the current path between the first gate electrode G1 and the second gate electrode G2 can be made longer than with a configuration in which the first gate electrode G1 and the second gate electrode G2 are directly connected by, for example, the first gate connecting member 71A, which increases the gate stray inductance and suppresses the occurrence of oscillation when the first switching element 61A and the second switching element 62A are simultaneously turned on and off.

[0133] (1-6) The semiconductor device 10 includes a first gate terminal 14 electrically connected to the connecting portion 45. Both the first wiring portion 41 and the second wiring portion 42 extend in the Y direction from the connecting portion 45. The length LY1 of the first wiring portion 41 in the Y direction is equal to the length LY2 of the second wiring portion 42 in the Y direction.

[0134] This configuration reduces the variation in the length of the current path between the first gate terminal 14 and the first gate electrode G1 and the length of the current path between the first gate terminal 14 and the second gate electrode G2, thereby reducing the difference in the on / off timing when the first switching element 61A and the second switching element 62A are turned on and off based on the gate signal supplied to the first gate terminal 14.

[0135] (1-7) The semiconductor device 10 includes: a third switching element 63A that includes a third gate electrode G3 and is located at a position spaced apart from the first switching element 61A in the Y direction, arranged closer to the first switching element 61A in the X direction relative to the first gate wiring 40, and connected in parallel to the first switching element 61A and the second switching element 62A; a fourth switching element 64A that includes a fourth gate electrode G4 and is located at a position spaced apart from the second switching element 62A in the Y direction, arranged closer to the second switching element 62A in the X direction relative to the first gate wiring 40, and connected in parallel to the first switching element 61A, the second switching element 62A, and the third switching element 63A; a third gate connecting member 73A that connects the third gate electrode G3 to the first gate wiring 40; and a fourth gate connecting member 74A that connects the fourth gate electrode G4 to the first gate wiring 40. The first gate wiring 40 includes a third wiring portion 43 extending in the Y direction and spaced apart from the first wiring portion 41 in the Y direction, and a fourth wiring portion 44 extending in the Y direction and spaced apart from the second wiring portion 42 in the Y direction. The connecting portion 45 is disposed between the first wiring portion 41 and the third wiring portion 43 in the Y direction and between the second wiring portion 42 and the fourth wiring portion 44 in the Y direction, and connects the first wiring portion 41, the second wiring portion 42, the third wiring portion 43, and the fourth wiring portion 44. The third gate connecting member 73A is connected to the third wiring portion 43 at a position spaced apart from the connecting portion 45 in the Y direction. The fourth gate connecting member 74A is connected to the fourth wiring portion 44 at a position spaced apart from the connecting portion 45 in the Y direction.

[0136] This configuration makes it possible to lengthen the current path between the third gate electrode G3 and the fourth gate electrode G4, thereby increasing the gate stray inductance and suppressing the occurrence of oscillation when the third switching element 63A and the fourth switching element 64A are simultaneously turned on and off.

[0137] (1-8) The third gate connection member 73A is connected to the tip 43A of the third wiring portion 43 that is separated from the coupling portion 45 in the Y direction. The fourth gate connection member 74A is connected to the tip 44A of the fourth wiring portion 44 that is separated from the coupling portion 45 in the Y direction.

[0138] According to this configuration, the current path between the third gate electrode G3 and the fourth gate electrode G4 can be made longer, which further increases the gate stray inductance, thereby further suppressing the occurrence of oscillation.

[0139] (1-9) The length LY3 of the third wiring portion 43 in the Y direction and the length LY4 of the fourth wiring portion 44 in the Y direction are both longer than the distance DX2 between the third wiring portion 43 and the fourth wiring portion 44 in the X direction.

[0140] This configuration makes it possible to lengthen the current path between the third gate electrode G3 and the fourth gate electrode G4 while suppressing an increase in size in the X direction of the semiconductor device 10. As a result, it is possible to suppress an increase in size of the semiconductor device 10 and also to suppress the occurrence of oscillation.

[0141] (1-10) The length LY3 in the Y direction of the third wiring portion 43 is longer than the length SY3 in the Y direction of the third switching element 63A. The length LY4 in the Y direction of the fourth wiring portion 44 is longer than the length SY4 in the Y direction of the fourth switching element 64A.

[0142] With this configuration, the current path between the third gate electrode G3 and the fourth gate electrode G4 can be made longer than when the length LY3 in the Y direction of the third wiring portion 43 is equal to or less than the length SY3 in the Y direction of the third switching element 63A and the length LY4 in the Y direction of the fourth wiring portion 44 is equal to or less than the length SY4 in the Y direction of the fourth switching element 64A. This increases the gate stray inductance, making it possible to suppress the occurrence of oscillation when the third switching element 63A and the fourth switching element 64A are turned on and off simultaneously.

[0143] (1-11) The sum of the Y-direction length LY3 of the third wiring portion 43, the length of the third gate connecting member 73A in a planar view, the Y-direction length LY4 of the fourth wiring portion 44, and the length of the fourth gate connecting member 74A in a planar view is greater than the second gate-to-gate distance GD2, which is the distance between the third gate electrode G3 and the fourth gate electrode G4 in a planar view.

[0144] With this configuration, the current path between the third gate electrode G3 and the fourth gate electrode G4 can be made longer than with a configuration in which the third gate electrode G3 and the fourth gate electrode G4 are directly connected by, for example, the third gate connecting member 73A, which increases the gate stray inductance and suppresses the occurrence of oscillation when the third switching element 63A and the fourth switching element 64A are simultaneously turned on and off.

[0145] (1-12) The semiconductor device 10 includes a first gate terminal 14 electrically connected to the coupling portion 45. The length LY3 of the third wiring portion 43 in the Y direction is equal to the length LY4 of the fourth wiring portion 44 in the Y direction.

[0146] This configuration makes it possible to reduce or equalize the difference in length between the current path between the first gate terminal 14 and the third gate electrode G3 and the current path between the first gate terminal 14 and the fourth gate electrode G4, thereby reducing the difference in on / off timing when the third switching element 63A and the fourth switching element 64A are turned on and off based on the gate signal supplied to the first gate terminal 14.

[0147] (1-13) The semiconductor device 10 includes a first gate terminal 14 electrically connected to the coupling portion 45. The length LY3 in the Y direction of the third wiring portion 43 is equal to the length LY1 in the Y direction of the first wiring portion 41. The length LY4 in the Y direction of the fourth wiring portion 44 is equal to the length LY2 in the Y direction of the second wiring portion 42.

[0148] This configuration reduces variations in the length of the current path between the first gate terminal 14 and the first gate electrode G1, the length of the current path between the first gate terminal 14 and the second gate electrode G2, the length of the current path between the first gate terminal 14 and the third gate electrode G3, and the length of the current path between the first gate terminal 14 and the fourth gate electrode G4. This reduces the difference in the timing of on / off switching when the first to fourth switching elements 61A to 64A are turned on and off based on the gate signal supplied to the first gate terminal 14.

[0149] (1-14) The second gate-to-gate distance GD2, which is the distance between the third gate electrode G3 of the third switching element 63A and the fourth gate electrode G4 of the fourth switching element 64A, is equal to the first gate-to-gate distance GD1, which is the distance between the first gate electrode G1 of the first switching element 61A and the second gate electrode G2 of the second switching element 62A in a planar view.

[0150] This configuration can further reduce the variations in the length of the current path between the first gate terminal 14 and the first gate electrode G1, the length of the current path between the first gate terminal 14 and the second gate electrode G2, the length of the current path between the first gate terminal 14 and the third gate electrode G3, and the length of the current path between the first gate terminal 14 and the fourth gate electrode G4.

[0151] (1-15) The sum of the Y-direction length LY1 of the first wiring portion 41, the length of the first gate connection member 71A in a planar view, the Y-direction length of the connecting portion 45, the Y-direction length LY3 of the third wiring portion 43, and the length of the third gate connection member 73A in a planar view is greater than the third gate-to-gate distance GD3, which is the distance between the first gate electrode G1 and the third gate electrode G3 in a planar view.

[0152] With this configuration, the current path between the first gate electrode G1 and the third gate electrode G3 can be made longer than with a configuration in which the first gate electrode G1 and the third gate electrode G3 are directly connected by, for example, the third gate connecting member 73A, which increases the gate stray inductance and suppresses the occurrence of oscillation when the first switching element 61A and the third switching element 63A are simultaneously turned on and off.

[0153] (1-16) The sum of the Y-direction length LY2 of the second wiring portion 42, the length of the second gate connecting member 72A in a planar view, the Y-direction length of the connecting portion 45, the Y-direction length LY4 of the fourth wiring portion 44, and the length of the fourth gate connecting member 74A in a planar view is greater than the fourth gate-to-gate distance GD4, which is the distance between the second gate electrode G2 and the fourth gate electrode G4 in a planar view.

[0154] With this configuration, the current path between the second gate electrode G2 and the fourth gate electrode G4 can be made longer than in a configuration in which the second gate electrode G2 and the fourth gate electrode G4 are directly connected by, for example, the fourth gate connecting member 74A, which increases the gate stray inductance and suppresses the occurrence of oscillation when the second switching element 62A and the fourth switching element 64A are simultaneously turned on and off.

[0155] (1-17) The widths W1 and W2 of the first wiring portion 41 and the second wiring portion 42 are smaller than the width of the connecting portion 45, respectively. According to this configuration, the electrical resistance in the first wiring portion 41 and the second wiring portion 42 can be increased, thereby suppressing the occurrence of an oscillation phenomenon when the first switching element 61A and the second switching element 62A are simultaneously turned on and off.

[0156] (1-18) The width W1 of the first wiring portion 41, the width W2 of the second wiring portion 42, the width W3 of the third wiring portion 43, and the width W4 of the fourth wiring portion 44 are each smaller than the width of the connecting portion 45. According to this configuration, the electrical resistance of the first to fourth wiring portions 41 to 44 can be increased, and therefore, the occurrence of an oscillation phenomenon when the first to fourth switching elements 61A to 64A are simultaneously turned on and off can be suppressed.

[0157] (1-19) The width of the tip 41A of the first wiring portion 41 is larger than the width W1 of a portion of the first wiring portion 41 closer to the connecting portion 45 than the tip 41A. The width of the tip 42A of the second wiring portion 42 is larger than the width W2 of a portion of the second wiring portion 42 closer to the connecting portion 45 than the tip 42A.

[0158] According to this configuration, the first gate connecting member 71A can be easily connected to the tip portion 41A of the first wiring portion 41. The second gate connecting member 72A can be easily connected to the tip portion A of the second wiring portion .

[0159] (1-20) The width of the tip 43A of the third wiring portion 43 is larger than the width W3 of a portion of the third wiring portion 43 closer to the connecting portion 45 than the tip 43A. The width of the tip 44A of the fourth wiring portion 44 is larger than the width W4 of a portion of the fourth wiring portion 44 closer to the connecting portion 45 than the tip 44A.

[0160] According to this configuration, the third gate connecting member 73A can be easily connected to the tip portion 43A of the third wiring portion 43. The fourth gate connecting member 74A can be easily connected to the tip portion 44A of the fourth wiring portion 44.

[0161] Second Embodiment A semiconductor device 10 of the second embodiment will be described with reference to Figures 11 to 13. The semiconductor device 10 of the second embodiment differs from the semiconductor device 10 of the first embodiment mainly in the configuration of the power supply wiring and the connection between the power supply wiring and the multiple switching elements 60U, 60L. In the following, components common to the first embodiment are denoted by the same reference numerals, and descriptions thereof will be omitted.

[0162] Fig. 11 is a schematic diagram showing the internal planar structure of a semiconductor device 10 according to the second embodiment. Fig. 12 is a schematic diagram showing an enlarged planar structure of a portion of Fig. 11. Fig. 13 is a schematic diagram showing an enlarged planar structure of a portion of Fig. 11 different from that of Fig. 12. Note that the first power supply terminal 11, the second power supply terminal 12, and the output terminal 13 are omitted from Fig. 11.

[0163] 11, the semiconductor device 10 of the second embodiment includes first to fourth power supply wirings 110, 120, 130, and 140 instead of the first to third power supply wirings 31 to 33 (see FIG. 2). The first to fourth power supply wirings 110, 120, 130, and 140 are made of, for example, the same conductive material as the first to third power supply wirings 31 to 33.

[0164] The first power supply wiring 110 is a wiring electrically connected to the first power supply terminal 11 in FIG. 1. The first power supply wiring 110 can also be said to be a wiring on which a plurality of switching elements 60U are mounted. The first power supply wiring 110 includes terminal connecting portions 111 and 112, a first element mounting portion 113, a second element mounting portion 114, a first connecting portion 115, a second connecting portion 116, and a third connecting portion 117. In the example shown in FIG. 10, the terminal connecting portions 111 and 112, the first element mounting portion 113, the second element mounting portion 114, the first connecting portion 115, the second connecting portion 116, and the third connecting portion 117 are integrated.

[0165] The terminal connection portions 111 and 112 are arranged at the end of the first substrate surface 21 of the insulating substrate 20 closer to the third substrate side surface 25. The terminal connection portions 111 and 112 are arranged at the same position in the Y direction and spaced apart from each other in the X direction. The terminal connection portion 111 is arranged at the end closer to the first substrate side surface 23 of both end portions of the first substrate surface 21 in the X direction. The terminal connection portion 112 is arranged at the end closer to the second substrate side surface 24 of both end portions of the first substrate surface 21 in the X direction.

[0166] The first element mounting portion 113 and the second element mounting portion 114 are arranged closer to the fourth substrate side surface 26 than the center of the first substrate surface 21 in the Y direction. The first element mounting portion 113 and the second element mounting portion 114 are arranged at the same position in the Y direction and spaced apart from each other in the X direction. The first element mounting portion 113 is arranged closer to the first substrate side surface 23 than the center of the first substrate surface 21 in the X direction. The second element mounting portion 114 is arranged closer to the second substrate side surface 24 than the center of the first substrate surface 21 in the X direction. Each of the first element mounting portion 113 and the second element mounting portion 114 is rectangular in shape with the Y direction as the longitudinal direction and the X direction as the lateral direction in a plan view.

[0167] The first connecting portion 115 connects the terminal connection portion 111 and the first element mounting portion 113. The first connecting portion 115 is L-shaped in a plan view. The first connecting portion 115 is disposed closer to the fourth substrate side surface 26 than the terminal connection portion 111 and closer to the first substrate side surface 23 than the first element mounting portion 113. The first connecting portion 115 includes a first portion extending in the Y direction from the terminal connection portion 111 toward the fourth substrate side surface 26 and a second portion extending in the X direction from the first portion toward the second substrate side surface 24. The first portion is provided at a position adjacent to the first substrate side surface 23 in the X direction in a plan view. The second portion is connected to one of both ends of the first element mounting portion 113 in the Y direction that is closer to the third substrate side surface 25.

[0168] The second connecting portion 116 connects the terminal connection portion 112 and the second element mounting portion 114. The second connecting portion 116 is L-shaped in a plan view. The second connecting portion 116 is disposed closer to the fourth substrate side surface 26 than the terminal connection portion 112 and closer to the second substrate side surface 24 than the second element mounting portion 114. The second connecting portion 116 includes a first portion extending in the Y direction from the terminal connection portion 112 toward the fourth substrate side surface 26 and a second portion extending in the X direction from the first portion toward the first substrate side surface 23. The first portion is disposed adjacent to the second substrate side surface 24 in the X direction in a plan view. The second portion is connected to one of the two Y-direction end portions of the second element mounting portion 114 that is closer to the third substrate side surface 25.

[0169] The third connecting portion 117 connects the first element mounting portion 113 and the second element mounting portion 114. The third connecting portion 117 connects the end of the first element mounting portion 113 closer to the third substrate side surface 25 to the end of the second element mounting portion 114 closer to the third substrate side surface 25. The third connecting portion 117 is disposed between the first element mounting portion 113 and the second element mounting portion 114. The third connecting portion 117 extends in the X direction.

[0170] The second power supply wiring 120 is a wiring electrically connected to the second power supply terminal 12 in Fig. 1. The second power supply wiring 120 includes a terminal connection portion 121, a first end connection portion 122, a second end connection portion 123, a central connection portion 124, a first connection portion 125, and a second connection portion 126. In the example shown in Fig. 10, the terminal connection portion 121, the first end connection portion 122, the second end connection portion 123, the central connection portion 124, the first connection portion 125, and the second connection portion 126 are integrated.

[0171] The terminal connection portion 121 is disposed at an end portion of the first substrate surface 21 closer to the third substrate side surface 25. The terminal connection portion 121 is disposed between the terminal connection portion 111 and the terminal connection portion 112 of the first power supply wiring 110 in the X direction.

[0172] The first end connection portion 122, the second end connection portion 123, and the central connection portion 124 are each arranged closer to the fourth substrate side surface 26 than the terminal connection portion 121. The first end connection portion 122, the second end connection portion 123, and the central connection portion 124 are arranged at the same position in the Y direction and spaced apart from each other in the X direction. The first end connection portion 122 is arranged closer to the first substrate side surface 23 than the terminal connection portion 121. The second end connection portion 123 is arranged closer to the second substrate side surface 24 than the terminal connection portion 121. The central connection portion 124 is arranged at a position overlapping with the terminal connection portion 121 when viewed from the Y direction. The first end connection portion 122 and the second end connection portion 123 are each strip-shaped extending in the Y direction. The central connection portion 124 is rectangular with the Y direction as the longitudinal direction and the X direction as the lateral direction.

[0173] The first connecting portion 125 connects the terminal connecting portion 121, the first end connecting portion 122, and the central connecting portion 124. The first connecting portion 125 extends in the X direction. The first connecting portion 125, the first end connecting portion 122, and the central connecting portion 124 form a first recess 127 that opens toward the fourth substrate side surface 26.

[0174] The second connecting portion 126 connects the terminal connecting portion 121, the second end connecting portion 123, and the central connecting portion 124. The second connecting portion 126 extends in the X direction. The second connecting portion 126, the second end connecting portion 123, and the central connecting portion 124 form a second recess 128 that opens toward the fourth substrate side surface 26.

[0175] The central connection portion 124 includes an opening 129 provided in the center in the X direction. The opening 129 has a strip shape extending in the Y direction in a plan view. The second gate wiring 50 is disposed within the opening 129.

[0176] The third power supply wiring 130 and the fourth power supply wiring 140 are wirings that electrically connect the output terminal 13 in FIG. 1 and the multiple switching elements 60L. The third power supply wiring 130 is a wiring on which the multiple switching elements 60L are mounted. The fourth power supply wiring 140 is a wiring to which the output terminal 13 is connected. The third power supply wiring 130 and the fourth power supply wiring 140 are arranged apart from each other in the Y direction, but are electrically connected to each other.

[0177] The third power supply wiring 130 is arranged closer to the third substrate side surface 25 than the fourth power supply wiring 140. The third power supply wiring 130 is arranged closer to the third substrate side surface 25 than the first element mounting portion 113 and the second element mounting portion 114 of the first power supply wiring 110. The third power supply wiring 130 includes a first element mounting portion 131, a second element mounting portion 132, and a connecting portion 133. In the example shown in FIG. 11 , the first element mounting portion 131, the second element mounting portion 132, and the connecting portion 133 are integrated.

[0178] The first element mounting portion 131 and the second element mounting portion 132 are portions on which a plurality of switching elements 60L are mounted. The first element mounting portion 131 and the second element mounting portion 132 are arranged at the same position in the Y direction and spaced apart from each other in the X direction. The first element mounting portion 131 is arranged in a first recess 127 of the second power supply wiring 120 in a plan view. The second element mounting portion 132 is arranged in a second recess 128 of the second power supply wiring 120 in a plan view. Each of the first element mounting portion 131 and the second element mounting portion 132 has a rectangular shape with the Y direction as the longitudinal direction and the X direction as the lateral direction in a plan view.

[0179] The first element mounting portion 131 is disposed at the same position in the X direction as the first element mounting portion 113 of the first power supply wiring 110. The second element mounting portion 132 is disposed at the same position in the X direction as the second element mounting portion 114 of the first power supply wiring 110.

[0180] A first connection portion 134 extending toward the first substrate side surface 23 is provided at an end of the first element mounting portion 131 closer to the fourth substrate side surface 26. A second connection portion 135 extending toward the second substrate side surface 24 is provided at an end of the second element mounting portion 132 closer to the fourth substrate side surface 26.

[0181] The connecting portion 133 is disposed between the first element mounting portion 131 and the second element mounting portion 132 in the X direction. The connecting portion 133 extends in the X direction. The connecting portion 133 connects the first element mounting portion 131 and the second element mounting portion 132. In the example shown in FIG. 11 , the connecting portion 133 connects an end of the first element mounting portion 131 closer to the fourth substrate side surface 26 and an end of the second element mounting portion 132 closer to the fourth substrate side surface 26. The connecting portion 133 is disposed closer to the fourth substrate side surface 26 than the central connection portion 124 of the second power supply wiring 120.

[0182] The first element mounting portion 131, the second element mounting portion 132, and the connecting portion 133 form a recess 136 that opens toward the third substrate side surface 25. The central connection portion 124 of the second power supply wiring 120 is disposed within the recess 136 in a plan view.

[0183] The fourth power supply wiring 140 is disposed closer to the fourth substrate side surface 26 than the first to third coupling portions 115 to 117 of the first power supply wiring 110. The fourth power supply wiring 140 includes a terminal connection portion 141, a first end connection portion 142, a second end connection portion 143, and a central connection portion 144. In the example shown in FIG. 11, the terminal connection portion 141, the first end connection portion 142, the second end connection portion 143, and the central connection portion 124 are integrated.

[0184] 1 is connected to the terminal connection portion 141. The terminal connection portion 141 is disposed at an end portion of the first substrate surface 21 that is closer to the fourth substrate side surface 26. In the example shown in FIG. 11, the width (dimension in the X direction) of the terminal connection portion 141 is larger than the width (dimension in the X direction) of the terminal connection portions 111, 112 of the first power supply wiring 110.

[0185] The first end connection portion 142, the second end connection portion 143, and the central connection portion 144 are each arranged closer to the third substrate-side surface 25 than the terminal connection portion 141. The first end connection portion 142, the second end connection portion 143, and the central connection portion 144 are arranged at the same position in the Y direction and spaced apart from each other in the X direction. The first end connection portion 142 is arranged closer to the first substrate-side surface 23 than the first element mounting portion 113 of the first power supply wiring 110. The second end connection portion 143 is arranged closer to the second substrate-side surface 24 than the second element mounting portion 114 of the first power supply wiring 110. The central connection portion 144 is arranged between the first element mounting portion 113 and the second element mounting portion 114 in the X direction. The first end connection portion 142 and the second end connection portion 143 are each strip-shaped extending in the Y direction in a plan view. The central connection portion 144 has a rectangular shape with its longitudinal direction in the Y direction and its lateral direction in the X direction in plan view.

[0186] The terminal connection portion 141, the first end connection portion 142, and the central connection portion 144 form a first recess 145 that opens toward the third substrate side surface 25. The first element mounting portion 113 is disposed within the first recess 145.

[0187] The terminal connection portion 141, the second end connection portion 143, and the central connection portion 144 form a second recess 146 that opens toward the third substrate side surface 25. The second element mounting portion 114 is disposed within the second recess 146.

[0188] The central connection portion 144 includes an opening 147 provided in the center in the X direction. The opening 147 has a strip shape extending in the Y direction in a plan view. The first gate wiring 40 is disposed within the opening 147.

[0189] The third power supply wiring 130 and the fourth power supply wiring 140 are electrically connected by first to third wiring connecting members 151 to 153. The first wiring connecting member 151 connects the first connection portion 134 of the third power supply wiring 130 and the first end connection portion 142 of the fourth power supply wiring 140. The first wiring connecting member 151 is provided so as to straddle the first coupling portion 115 of the first power supply wiring 110. The second wiring connecting member 152 connects the second connection portion 135 of the third power supply wiring 130 and the second end connection portion 143 of the fourth power supply wiring 140. The second wiring connecting member 152 is provided so as to straddle the second coupling portion 116 of the first power supply wiring 110. The third wiring connecting member 153 connects the coupling portion 133 of the third power supply wiring 130 and the central connection portion 144 of the fourth power supply wiring 140. The third wiring connection member 153 is provided so as to straddle the third coupling portion 117 of the first power supply wiring 110.

[0190] Of the multiple switching elements 60U, a first switching element 61A and a third switching element 63A are mounted on the first element mounting portion 113 of the first power supply wiring 110. Similar to the first embodiment, both the first switching element 61A and the third switching element 63A are bonded to the first element mounting portion 113 with a conductive bonding material (not shown). As a result, both the first drain electrode D1 (see FIG. 3) of the first switching element 61A and the third drain electrode D3 (see FIG. 4) of the third switching element 63A are electrically connected to the first element mounting portion 113 (first power supply wiring 110). In the example shown in FIG. 11, the first switching element 61A and the third switching element 63A are disposed at the same position in the X direction and spaced apart from each other in the Y direction. The first switching element 61A is disposed closer to the third substrate side surface 25 than the third switching element 63A.

[0191] Of the multiple switching elements 60U, a second switching element 62A and a fourth switching element 64A are mounted on the second element mounting portion 114 of the first power supply wiring 110. Similar to the first embodiment, both the second switching element 62A and the fourth switching element 64A are bonded to the second element mounting portion 114 with a conductive bonding material (not shown). This electrically connects the second drain electrode D2 (see FIG. 3) of the second switching element 62A and the fourth drain electrode D4 (see FIG. 4) of the fourth switching element 64A to the second element mounting portion 114 (first power supply wiring 110). In the example shown in FIG. 11, the second switching element 62A and the fourth switching element 64A are positioned at the same position in the X direction and spaced apart from each other in the Y direction. The second switching element 62A is positioned closer to the third substrate side surface 25 than the fourth switching element 64A.

[0192] The first source connecting member 81A connects the fourth power supply wiring 140, the first source electrode S1 of the first switching element 61A, and the second source electrode S2 of the second switching element 62A. More specifically, the first source connecting member 81A can be divided into first to fifth portions. The first portion connects the first source electrode S1 of the first switching element 61A to the first end connection portion 142 of the fourth power supply wiring 140. The second portion connects the first source electrode S1 to the central connection portion 144 of the fourth power supply wiring 140. The third portion is connected to both sides of the central connection portion 144 in the X direction of the opening 147 so as to straddle the opening 147 of the central connection portion 144, in other words, so as to straddle the first gate wiring 40. The fourth portion connects the central connection portion 144 to the second source electrode S2 of the second switching element 62A. The fifth portion connects the second source electrode S2 to the second end connection portion 143.

[0193] The second source connection member 82A connects the fourth power supply wiring 140, the third source electrode S3 of the third switching element 63A, and the fourth source electrode S4 of the fourth switching element 64A. The connection between the fourth power supply wiring 140, the third source electrode S3, and the fourth source electrode S4 by the second source connection member 82A is similar to the connection between the fourth power supply wiring 140, the first source electrode S1, and the second source electrode S2 by the first source connection member 81A.

[0194] As shown in FIG. 12, the configuration of the first gate wiring 40, the positional relationship between the first to fourth gate electrodes G1 to G4 of the first to fourth switching elements 61A to 64A and the first gate wiring 40, and the connection between the first to fourth gate electrodes G1 to G4 and the first gate wiring 40 by the first to fourth gate connecting members 71A to 74A are the same as those in the first embodiment.

[0195] As shown in FIG. 11, a first switching element 61B and a third switching element 63B of the multiple switching elements 60L are mounted on a first element mounting portion 131 of the third power supply wiring 130. Both the first switching element 61B and the third switching element 63B are bonded to the first element mounting portion 131 with a conductive bonding material (not shown), as in the first embodiment. As a result, both the first drain electrode D1 (see FIG. 5) of the first switching element 61B and the third drain electrode D3 (see FIG. 6) of the third switching element 63B are electrically connected to the first element mounting portion 131 (the third power supply wiring 130). In the example shown in FIG. 11, the first switching element 61B and the third switching element 63B are disposed at the same position in the X direction and spaced apart from each other in the Y direction. The first switching element 61B is disposed closer to the third substrate side surface 25 than the third switching element 63B.

[0196] Of the multiple switching elements 60L, a second switching element 62B and a fourth switching element 64B are mounted on the second element mounting portion 132 of the third power supply wiring 130. Similar to the first embodiment, both the second switching element 62B and the fourth switching element 64B are bonded to the second element mounting portion 132 with a conductive bonding material (not shown). This electrically connects the second drain electrode D2 (see FIG. 5) of the second switching element 62B and the fourth drain electrode D4 (see FIG. 6) of the fourth switching element 64B to the second element mounting portion 132 (the third power supply wiring 130). In the example shown in FIG. 11, the second switching element 62B and the fourth switching element 64B are positioned at the same position in the X direction and spaced apart from each other in the Y direction. The second switching element 62B is positioned closer to the third substrate side surface 25 than the fourth switching element 64B.

[0197] The first source connecting member 81B connects the second power supply wiring 120, the first source electrode S1 of the first switching element 61B, and the second source electrode S2 of the second switching element 62B. More specifically, the first source connecting member 81B can be divided into first to fifth portions. The first portion connects the first source electrode S1 of the first switching element 61B to the first end connection portion 122 of the second power supply wiring 120. The second portion connects the first source electrode S1 to the central connection portion 124 of the second power supply wiring 120. The third portion is connected to both sides of the central connection portion 124 in the X direction of the opening 129 so as to straddle the opening 129 of the central connection portion 124, in other words, so as to straddle the second gate wiring 50. The fourth portion connects the central connection portion 124 to the second source electrode S2 of the second switching element 62B. The fifth portion connects the second source electrode S2 to the second end connection portion 123.

[0198] The second source connection member 82B connects the second power supply wiring 120, the third source electrode S3 of the third switching element 63B, and the fourth source electrode S4 of the fourth switching element 64B. The connection between the second power supply wiring 120, the third source electrode S3, and the fourth source electrode S4 by the second source connection member 82B is similar to the connection between the second power supply wiring 120, the first source electrode S1, and the second source electrode S2 by the first source connection member 81B.

[0199] 13, the configuration of the second gate wiring 50, the positional relationship between the first to fourth gate electrodes G1 to G4 of the first to fourth switching elements 61B to 64B and the second gate wiring 50, and the connection between the first to fourth gate electrodes G1 to G4 and the second gate wiring 50 by the first to fourth gate connecting members 71B to 74B are the same as those in the first embodiment. Note that the second embodiment can achieve the same effects as the first embodiment.

[0200] <Third embodiment> A semiconductor device 10 of the third embodiment will be described with reference to Figures 14 and 15. The semiconductor device 10 of the third embodiment differs from the semiconductor device 10 of the first embodiment mainly in the number of switching elements 60U, 60L. In the following, components common to the first embodiment are denoted by the same reference numerals, and descriptions thereof will be omitted.

[0201] Fig. 14 is a schematic diagram showing the internal planar structure of the semiconductor device 10 of the third embodiment. Fig. 15 is a schematic diagram showing an enlarged planar structure of a portion of Fig. 14. For convenience, Fig. 14 omits the first power supply terminal 11, the second power supply terminal 12, the output terminal 13, and the package body 100.

[0202] 14, in the third embodiment, the multiple switching elements 60U include multiple first switching elements 61A, multiple second switching elements 62A, multiple third switching elements 63A, and multiple fourth switching elements 64A. As the number of multiple switching elements 60U increases compared to the first embodiment, the configuration of the first power supply wiring 31 differs. Specifically, the width (dimension in the X direction) of the first mounting portion 31D of the first power supply wiring 31 and the width (dimension in the X direction) of the second mounting portion 31E are larger than those of the first embodiment.

[0203] The multiple first switching elements 61A are arranged on the first mounting portion 31D at the same positions in the Y direction and spaced apart from each other in the X direction. The multiple third switching elements 63A are arranged on the first mounting portion 31D at the same positions in the Y direction and spaced apart from each other in the X direction. The multiple first switching elements 61A and the multiple third switching elements 63A are arranged in a matrix on the first mounting portion 31D.

[0204] The second switching elements 62A are arranged on the second mounting portion 31E at the same positions in the Y direction and spaced apart in the X direction. The fourth switching elements 64A are arranged on the second mounting portion 31E at the same positions in the Y direction and spaced apart in the X direction. The second switching elements 62A and the fourth switching elements 64A are arranged in a matrix on the second mounting portion 31E.

[0205] The first source connection member 81A connects the first source electrodes S1 of the multiple first switching elements 61A, the third power supply wiring 33, and the second source electrodes S2 of the multiple second switching elements 62A. The first source connection member 81A of the third embodiment differs from the first source connection member 81A of the first embodiment in that it further includes a portion that connects the first source electrodes S1 of the first switching elements 61A adjacent to each other in the X direction and a portion that connects the second source electrodes S2 of the second switching elements 62A adjacent to each other in the X direction.

[0206] The second source connection member 82A connects the third source electrodes S3 of the multiple third switching elements 63A, the third power supply wiring 33, and the fourth source electrodes S4 of the multiple fourth switching elements 64A. The second source connection member 82A of the third embodiment differs from the second source connection member 82A of the first embodiment in that it further includes a portion that connects the third source electrodes S3 of the third switching elements 63A adjacent to each other in the X direction and a portion that connects the fourth source electrodes S4 of the fourth switching elements 64A adjacent to each other in the X direction.

[0207] 15 , the first gate connecting member 71A of the third embodiment differs from the first gate connecting member 71A of the first embodiment in that it further includes a portion connecting the first gate electrodes G1 of the plurality of first switching elements 61A to each other. The second gate connecting member 72A of the third embodiment differs from the second gate connecting member 72A of the first embodiment in that it further includes a portion connecting the second gate electrodes G2 of the plurality of second switching elements 62A to each other. The third gate connecting member 73A of the third embodiment differs from the third gate connecting member 73A of the first embodiment in that it further includes a portion connecting the third gate electrodes G3 of the plurality of third switching elements 63A to each other. The fourth gate connecting member 74A of the third embodiment differs from the fourth gate connecting member 74A of the first embodiment in that it further includes a portion connecting the fourth gate electrodes G4 of the plurality of fourth switching elements 64A to each other.

[0208] 14, the multiple switching elements 60L include multiple first switching elements 61B, multiple second switching elements 62B, multiple third switching elements 63B, and multiple fourth switching elements 64B. As the number of multiple switching elements 60L increases compared to the first embodiment, the configuration of the third power supply wiring 33 differs. Specifically, the width (dimension in the X direction) of the first mounting portion 33E of the third power supply wiring 33 and the width (dimension in the X direction) of the second mounting portion 33F are larger than those of the first embodiment.

[0209] The multiple first switching elements 61B are arranged on the first mounting portion 33E at the same positions in the Y direction and spaced apart in the X direction. The multiple third switching elements 63B are arranged on the first mounting portion 33E at the same positions in the Y direction and spaced apart in the X direction. The multiple first switching elements 61B and the multiple third switching elements 63B are arranged in a matrix on the first mounting portion 33E.

[0210] The second switching elements 62B are arranged on the second mounting portion 33F at the same positions in the Y direction and spaced apart in the X direction. The fourth switching elements 64B are arranged on the second mounting portion 33F at the same positions in the Y direction and spaced apart in the X direction. The second switching elements 62B and the fourth switching elements 64B are arranged in a matrix on the second mounting portion 33F.

[0211] The first source connection member 81B connects the first source electrodes S1 of the multiple first switching elements 61B, the second power supply wiring 32, and the second source electrodes S2 of the multiple second switching elements 62B. The first source connection member 81B of the third embodiment differs from the first source connection member 81B of the first embodiment in that it further includes a portion that connects the first source electrodes S1 of the first switching elements 61B adjacent in the X direction to each other and a portion that connects the second source electrodes S2 of the second switching elements 62B adjacent in the X direction to each other.

[0212] The second source connection member 82B connects the third source electrodes S3 of the multiple third switching elements 63B, the second power supply wiring 32, and the fourth source electrodes S4 of the multiple fourth switching elements 64B. The second source connection member 82B of the third embodiment differs from the second source connection member 82B of the first embodiment in that it further includes a portion that connects the third source electrodes S3 of the third switching elements 63B adjacent to each other in the X direction and a portion that connects the fourth source electrodes S4 of the fourth switching elements 64B adjacent to each other in the X direction.

[0213] The first gate connecting member 71B of the third embodiment differs from the first gate connecting member 71B of the first embodiment in that it further includes a portion connecting the first gate electrodes G1 of the plurality of first switching elements 61B to each other. The second gate connecting member 72B of the third embodiment differs from the second gate connecting member 72B of the first embodiment in that it further includes a portion connecting the second gate electrodes G2 of the plurality of second switching elements 62B to each other. The third gate connecting member 73B of the third embodiment differs from the third gate connecting member 73B of the first embodiment in that it further includes a portion connecting the third gate electrodes G3 of the plurality of third switching elements 63B to each other. The fourth gate connecting member 74B of the third embodiment differs from the fourth gate connecting member 74B of the first embodiment in that it further includes a portion connecting the fourth gate electrodes G4 of the plurality of fourth switching elements 64B to each other. Note that the third embodiment provides the same effects as the first embodiment.

[0214] <Fourth embodiment> A semiconductor device 10 of the fourth embodiment will be described with reference to Figures 16 and 17. The semiconductor device 10 of the fourth embodiment differs from the semiconductor device 10 of the first embodiment mainly in the electrical connection structure of the multiple switching elements 60U, 60L. In the following, components common to the first embodiment are denoted by the same reference numerals, and descriptions thereof will be omitted.

[0215] Fig. 16 is a schematic diagram showing the internal planar structure of the semiconductor device 10 of the fourth embodiment. Fig. 17 is a schematic diagram showing the cross-sectional structure of the semiconductor device 10 taken along line F17-F17 in Fig. 16.

[0216] 16 and 17, the semiconductor device 10 includes a first substrate 160 and a second substrate 170 instead of the insulating substrate 20 (see FIG. 3). The first substrate 160 and the second substrate 170 are disposed facing each other and spaced apart in the Z direction. A plurality of switching elements 60U, 60L are mounted on the first substrate 160.

[0217] First substrate 160 has a rectangular flat plate shape with the thickness direction in the Z direction. In the example shown in FIG. 16, first substrate 160 has a rectangular shape with the longitudinal direction in the X direction and the lateral direction in the Y direction in a plan view. First substrate 160 includes first substrate surface 161, second substrate surface 162 opposite first substrate surface 161, and first to fourth substrate side surfaces 163 to 166 as four substrate side surfaces connecting first substrate surface 161 and second substrate surface 162. First substrate side surface 163 and second substrate side surface 164 constitute both end surfaces of first substrate 160 in the X direction. Third substrate side surface 165 and fourth substrate side surface 166 constitute both end surfaces of first substrate 160 in the Y direction.

[0218] The first substrate surface 161 is provided with first to seventh power supply wirings 181 to 187, a first signal wiring 188, and a second signal wiring 189. The second substrate surface 162 is provided with a heat sink 167, as in the first embodiment. Here, the heat sink 167 is an example of a "first heat sink." The first power supply wiring 181 is an example of a "first element mounting wiring." The second power supply wiring 182 is an example of a "second element mounting wiring."

[0219] The first power supply wiring 181 is arranged on the first substrate surface 161 closer to the first substrate side surface 163 in a plan view. The first power supply wiring 181 is a wiring on which a plurality of switching elements 60U (first to fourth switching elements 61A to 64A in the example of FIG. 16) are mounted. As in the first embodiment, each of the first to fourth switching elements 61A to 64A is joined to the first power supply wiring 181 by a conductive bonding material SD. As a result, the first to fourth drain electrodes D1 to D4 of the first to fourth switching elements 61A to 64A are electrically connected to the first power supply wiring 181.

[0220] The first power supply wiring 181 includes an element mounting portion 181A and a terminal connecting portion 181B. In one example, the element mounting portion 181A and the terminal connecting portion 181B are integrated. The element mounting portion 181A is a portion on which the first to fourth switching elements 61A to 64A are mounted. An opening 181C is provided in the element mounting portion 181A. In plan view, the first gate wiring 40 is arranged within the opening 181C. The arrangement of the first gate wiring 40 and the first to fourth switching elements 61A to 64A and the connection between the first to fourth gate electrodes G1 to G4 and the first gate wiring 40 are the same as in the first embodiment.

[0221] The terminal connection portion 181B is disposed closer to the third substrate side surface 165 than the element mounting portion 181A. A recessed portion 181D is provided between the terminal connection portion 181B and the element mounting portion 181A. The recessed portion 181D opens toward the first substrate side surface 163. The first power supply terminal 11 and the first drain detection terminal 16 are connected to the terminal connection portion 181B. As a result, both the first power supply terminal 11 and the first drain detection terminal 16 are electrically connected to the first to fourth drain electrodes D1 to D4 of the first to fourth switching elements 61A to 64A. The first power supply terminal 11 and the first drain detection terminal 16 are disposed at the same position as each other in the Y direction and spaced apart from each other in the X direction. The first drain detection terminal 16 is disposed closer to the first substrate side surface 163 than the first power supply terminal 11. The first drain detection terminal 16 has a strip shape extending in the Y direction in a plan view.

[0222] The second power supply wiring 182 is arranged in the recessed portion 181D of the first power supply wiring 181. The third power supply wiring 183 is arranged closer to the first substrate side surface 163 and the third substrate side surface 165 than the second power supply wiring 182 and spaced apart from the second power supply wiring 182. The second power supply wiring 182 and the third power supply wiring 183 are connected by a wire 199A. This electrically connects the second power supply wiring 182 and the third power supply wiring 183. The first source detection terminal 18 is connected to the third power supply wiring 183. The first source detection terminal 18 has a strip shape extending in the Y direction in a plan view.

[0223] The first signal wiring 188 is provided so as to surround a portion of the first power supply wiring 181 from the first substrate side surface 163 and the third substrate side surface 165 in a plan view. The first signal wiring 188 includes first to third patterns. The first pattern is arranged between the first power supply wiring 181 and the first substrate side surface 163 in the X direction in a plan view. The first pattern extends in the Y direction. The first pattern is electrically connected to the first gate wiring 40 by a wire 199B. In other words, the first signal wiring 188 is electrically connected to the first gate wiring 40. The second pattern extends in the X direction from the first pattern toward the second power supply wiring 182. The second pattern is arranged closer to the third substrate side surface 165 than the element mounting portion 181A of the first power supply wiring 181. The third pattern extends in the Y direction from the second pattern toward the third substrate side surface 165. The third pattern extends across the X direction between the second power supply wiring 182 and the third power supply wiring 183. The third pattern is connected to the first gate terminal 14. Unlike the first embodiment, the first gate terminal 14 has a strip shape extending in the Y direction in plan view.

[0224] The fourth power supply wiring 184 is arranged on the first substrate surface 161 closer to the second substrate side surface 164 in a plan view. The fourth power supply wiring 184 is adjacent to the first power supply wiring 181 in the X direction. The fourth power supply wiring 184 is a wiring on which a plurality of switching elements 60L (first to fourth switching elements 61B to 64B in the example of FIG. 16) are mounted. As in the first embodiment, each of the first to fourth switching elements 61B to 64B is joined to the fourth power supply wiring 184 by a conductive bonding material SD. As a result, the first to fourth drain electrodes D1 to D4 of the first to fourth switching elements 61B to 64B are electrically connected to the fourth power supply wiring 184.

[0225] The fourth power supply wiring 184 includes an element mounting portion 184A and a connection portion 184B. In one example, the element mounting portion 184A and the connection portion 184B are integrated. The element mounting portion 184A is a portion on which the first to fourth switching elements 61B to 64B are mounted. An opening 184C is provided in the element mounting portion 184A. In plan view, the second gate wiring 50 is arranged within the opening 184C. The arrangement of the second gate wiring 50 and the first to fourth switching elements 61B to 64B and the connection between the first to fourth gate electrodes G1 to G4 and the second gate wiring 50 are the same as in the first embodiment.

[0226] The connection portion 184B is disposed closer to the fourth substrate side surface 166 than the element mounting portion 184A. A recessed portion 184D is provided between the connection portion 184B and the element mounting portion 184A. The recessed portion 184D opens toward the second substrate side surface 164. The output terminal 13 and the second drain detection terminal 17 are connected to the connection portion 184B. As a result, both the output terminal 13 and the second drain detection terminal 17 are electrically connected to the first to fourth drain electrodes D1 to D4 of the first to fourth switching elements 61B to 64B. The output terminal 13 and the second drain detection terminal 17 are disposed at the same position as each other in the Y direction and spaced apart from each other in the X direction. The second drain detection terminal 17 is disposed closer to the second substrate side surface 164 than the output terminal 13. The second drain detection terminal 17 has a strip shape extending in the Y direction in a plan view.

[0227] The connection portion 184B extends closer to the first substrate side surface 163 than the element mounting portion 184A. The connection portion 184B includes an extension portion 184E that extends in the X direction between the first power supply wiring 181 and the fourth substrate side surface 166 in the Y direction.

[0228] A fifth power supply wiring 185 is arranged in the recessed portion 184D of the fourth power supply wiring 184. The sixth power supply wiring 186 is arranged closer to the second substrate side surface 164 and the fourth substrate side surface 166 than the fifth power supply wiring 185 and spaced apart from the fifth power supply wiring 185. The fifth power supply wiring 185 and the sixth power supply wiring 186 are connected by a wire 199C. This electrically connects the fifth power supply wiring 185 and the sixth power supply wiring 186. A second source detection terminal 19 is connected to the sixth power supply wiring 186. The second source detection terminal 19 has a strip shape extending in the Y direction in a plan view.

[0229] The second signal wiring 189 is provided so as to surround a portion of the fourth power supply wiring 184 from the second substrate side surface 164 and the fourth substrate side surface 166 in plan view. The second signal wiring 189 includes first to third patterns. The first pattern is arranged between the fourth power supply wiring 184 and the second substrate side surface 164 in the X direction in plan view. The first pattern extends in the Y direction. The first pattern is electrically connected to the second gate wiring 50 by a wire 199D. In other words, the second signal wiring 189 is electrically connected to the second gate wiring 50. The second pattern extends in the X direction from the first pattern toward the fifth power supply wiring 185. The second pattern is arranged closer to the fourth substrate side surface 166 than the element mounting portion 184A of the fourth power supply wiring 184. The third pattern extends in the Y direction from the second pattern toward the fourth substrate side surface 166. The third pattern extends across the X direction between the fifth power supply wiring 185 and the sixth power supply wiring 186. The third pattern is connected to the second gate terminal 15. Unlike the first embodiment, the second gate terminal 15 has a strip shape extending in the Y direction in plan view.

[0230] The seventh power supply wiring 187 is arranged closer to the second substrate side surface 164 than the first power supply wiring 181 and closer to the third substrate side surface 165 than the fourth power supply wiring 184. The seventh power supply wiring 187 is arranged in a position adjacent to the terminal connection portion 181B of the first power supply wiring 181 in the X direction. The seventh power supply wiring 187 has a rectangular shape with the X direction as the longitudinal direction and the Y direction as the lateral direction in a plan view. A second power supply terminal 12 is connected to the seventh power supply wiring 187. The second power supply terminal 12 is arranged closer to the terminal connection portion 181B than the center of the seventh power supply wiring 187 in the X direction.

[0231] Second substrate 170 includes first substrate surface 171 and second substrate surface 172 opposite first substrate surface 171. First power supply wiring 191 and second power supply wiring 192 are provided on first substrate surface 171. Second substrate surface 172 is provided with heat sink 173. Here, heat sink 173 is an example of a "second heat sink."

[0232] The first power supply wiring 191 is a wiring electrically connected to the first to fourth source electrodes S1 to S4 of the first to fourth switching elements 61A to 64A. The first power supply wiring 191 faces the first power supply wiring 181, the second power supply wiring 182, and the extension portion 184E of the fourth power supply wiring 184 in the Z direction.

[0233] A first source connection member 193 is connected to each of the first to fourth source electrodes S1 to S4 of the first to fourth switching elements 61A to 64A. The first source connection member 193 is a pillar made of a conductive material such as Al or Cu. In the example shown in FIG. 16, the pillar has a rectangular shape in a plan view. The first source connection member 193 is connected to a first power supply wiring 191. This electrically connects the first to fourth source electrodes S1 to S4 and the first power supply wiring 191.

[0234] A first wiring connection member 195 is connected to the second power supply wiring 182. The first wiring connection member 195 is a pillar made of a conductive material such as Al or Cu. In the example shown in FIG. 16, the pillar has a rectangular shape in a plan view. The first wiring connection member 195 is disposed closer to the second substrate side surface 164 than the wire 199A. The first wiring connection member 195 is electrically connected to the first power supply wiring 191. As a result, the second power supply wiring 182 is electrically connected to the first to fourth source electrodes S1 to S4 of the first to fourth switching elements 61A to 64A.

[0235] A second wiring connection member 196 is connected to the extension portion 184E of the fourth power supply wiring 184. The second wiring connection member 196 is a pillar made of a conductive material such as Al or Cu. In the example shown in FIG. 16, the pillar has a rectangular shape with the X direction as the longitudinal direction and the Y direction as the lateral direction in a plan view. The second wiring connection member 196 is disposed at the same position as the first gate wiring 40 in the X direction. The second wiring connection member 196 is connected to the first power supply wiring 191. As a result, the fourth power supply wiring 184 is electrically connected to the first to fourth source electrodes S1 to S4 of the first to fourth switching elements 61A to 64A. Therefore, the first to fourth source electrodes S1 to S4 of the first to fourth switching elements 61A to 64A are electrically connected to the first to fourth drain electrodes D1 to D4 of the first to fourth switching elements 61B to 64B.

[0236] The second power supply wiring 192 is a wiring electrically connected to the first to fourth source electrodes S1 to S4 of the first to fourth switching elements 61B to 64B. The second power supply wiring 192 faces the fourth power supply wiring 184, the fifth power supply wiring 185, and the seventh power supply wiring 187 in the Z direction.

[0237] A second source connection member 194 is connected to each of the first to fourth source electrodes S1 to S4 of the first to fourth switching elements 61B to 64B. The second source connection member 194 is a pillar made of a conductive material such as Al or Cu. In the example shown in FIG. 16, the pillar has a rectangular shape in a plan view. The second source connection member 194 is connected to a second power supply wiring 192. This electrically connects the first to fourth source electrodes S1 to S4 of the first to fourth switching elements 61B to 64B to the second power supply wiring 192.

[0238] A third wiring connection member 197 is connected to the fifth power supply wiring 185. The third wiring connection member 197 uses a pillar made of a conductive material such as Al or Cu. In the example shown in FIG. 16, the pillar has a rectangular shape in a plan view. The third wiring connection member 197 is arranged closer to the first substrate side surface 163 than the wire 199B. The third wiring connection member 197 is electrically connected to the second power supply wiring 192. As a result, the fifth power supply wiring 185 is electrically connected to the first to fourth source electrodes S1 to S4 of the first to fourth switching elements 61B to 64B.

[0239] A fourth wiring connection member 198 is connected to the seventh power supply wiring 187. The fourth wiring connection member 198 uses a pillar made of a conductive material such as Al or Cu. In the example shown in FIG. 16, the pillar has a rectangular shape with its longitudinal direction in the X direction and its lateral direction in the Y direction in a plan view. The fourth wiring connection member 198 is disposed at the same position as the second gate wiring 50 in the X direction. The fourth wiring connection member 198 is disposed closer to the fourth power supply wiring 184 than the second power supply terminal 12 in the Y direction. The fourth wiring connection member 198 is connected to the second power supply wiring 192. As a result, the seventh power supply wiring 187 is electrically connected to the first to fourth source electrodes S1 to S4 of the first to fourth switching elements 61B to 64B. These first to fourth source electrodes S1 to S4 are electrically connected to the second power supply terminal 12.

[0240] [Effects of the fourth embodiment] According to the semiconductor device 10 of the fourth embodiment, the following effects can be obtained. (4-1) The semiconductor device 10 includes a first substrate 160 including first to fourth switching elements 61B to 64B connected in series with the first to fourth switching elements 61A to 64A and connected in parallel with each other, a first substrate surface 161, and a second substrate surface 162 opposite to the first substrate surface 161, a first power supply wiring 181 provided on the first substrate surface 161 of the first substrate 160 and on which the first to fourth switching elements 61A to 64A are mounted, a fourth power supply wiring 184 provided on the first substrate surface 161 of the first substrate 160 and on which the first to fourth switching elements 61B to 64B are mounted, a first substrate surface 171, and a second substrate surface 172 opposite to the first substrate surface 171, and is spaced apart from the first substrate 160 in the Z direction. the first to fourth switching elements 61A to 64B in the Z direction; a first power supply wiring 191 provided on a first substrate surface 171 of the second substrate 170 and arranged to face the first to fourth switching elements 61A to 64A in the Z direction; a second power supply wiring 192 provided on the first substrate surface 171 of the second substrate 170 and arranged to face the first to fourth switching elements 61B to 64B in the Z direction; a first source connecting member 193 that individually connects the first to fourth source electrodes S1 to S4 of the first to fourth switching elements 61A to 64A to the first power supply wiring 191; and a second source connecting member 194 that individually connects the first to fourth source electrodes S1 to S4 of the first to fourth switching elements 61B to 64B to the second power supply wiring 192.

[0241] According to this configuration, the first power supply wiring 191 electrically connected to the first to fourth source electrodes S1 to S4 of the first to fourth switching elements 61A to 64A and the second power supply wiring 192 electrically connected to the first to fourth source electrodes S1 to S4 of the first to fourth switching elements 61B to 64B are arranged at a position different from the first substrate surface 161 of the first substrate 160 in the Z direction. Therefore, compared to a configuration in which the first power supply wiring 191 and the second power supply wiring 192 are provided on the first substrate surface 161 of the first substrate 160, the first substrate 160 can be made smaller in the X and Y directions. Therefore, the semiconductor device 10 can be made smaller in the X and Y directions.

[0242] (4-2) Each of the first source connecting member 193 and the second source connecting member 194 is formed of a pillar. Compared to a configuration in which the first to fourth source electrodes S1 to S4 of the first to fourth switching elements 61A to 64A are connected to the first power supply wiring 191 by wires, this configuration can reduce the inductance of the current path between the first to fourth source electrodes S1 to S4 of the first to fourth switching elements 61A to 64A and the first power supply wiring 191. Compared to a configuration in which the first to fourth source electrodes S1 to S4 of the first to fourth switching elements 61B to 64B are connected to the second power supply wiring 192 by wires, this configuration can reduce the inductance of the current path between the first to fourth source electrodes S1 to S4 of the first to fourth switching elements 61B to 64B and the second power supply wiring 192.

[0243] In addition, because the first power supply wiring 191 and the second power supply wiring 192 are provided on the first substrate surface 171 of the second substrate 170, a large space can be secured for providing the first power supply wiring 191 and the second power supply wiring 192. This improves the degree of freedom in designing the first power supply wiring 191 and the second power supply wiring 192.

[0244] (4-3) The semiconductor device 10 includes a heat sink 167 provided on the second substrate surface 162 of the first substrate 160 and a heat sink 173 provided on the second substrate surface 172 of the second substrate 170. With this configuration, heat generated in the first to fourth switching elements 61A to 64A, 61B to 64B is easily transferred to the heat sinks 167, 173. Then, the heat is dissipated to the outside of the semiconductor device 10 by the heat sinks 167, 173. Therefore, the cooling performance of the semiconductor device 10 can be improved.

[0245] <Application examples of semiconductor devices> The semiconductor device 10 according to each embodiment may be configured as an inverter unit that drives any one of the U, V, and W phases in a three-phase drive motor 250 (see FIG. 18) having, for example, a U, V, and W phase. Therefore, by providing three semiconductor devices 10 corresponding to the U, V, and W phases, an inverter device 200 for driving the three-phase drive motor 250 can be configured.

[0246] FIG. 18 shows an example of the circuit configuration of the inverter device 200. As shown in FIG. 18, the inverter device 200 includes a U-phase inverter circuit 210, a V-phase inverter circuit 220, and a W-phase inverter circuit 230.

[0247] The U-phase inverter circuit 210 includes switching elements 211 and 212 connected in series. The V-phase inverter circuit 220 includes switching elements 221 and 222 connected in series. The W-phase inverter circuit 230 includes switching elements 231 and 232 connected in series. In the example shown in FIG. 16 , the U-phase inverter circuit 210, the V-phase inverter circuit 220, and the W-phase inverter circuit 230 are each configured using a semiconductor device 10. Here, the semiconductor device 10 that configures the U-phase inverter circuit 210 is referred to as a "first semiconductor device 10A," the semiconductor device 10 that configures the V-phase inverter circuit 220 is referred to as a "second semiconductor device 10B," and the semiconductor device 10 that configures the W-phase inverter circuit 230 is referred to as a "third semiconductor device 10C."

[0248] The switching elements 211 of the U-phase inverter circuit 210 are composed of a plurality of switching elements 60U of the first semiconductor device 10A, and the switching elements 212 of the U-phase inverter circuit 210 are composed of a plurality of switching elements 60L of the first semiconductor device 10A. Furthermore, the switching elements 221 of the V-phase inverter circuit 220 are composed of a plurality of switching elements 60U of the second semiconductor device 10B, and the switching elements 222 of the V-phase inverter circuit 220 are composed of a plurality of switching elements 60L of the second semiconductor device 10B. Furthermore, the switching elements 231 of the W-phase inverter circuit 230 are composed of a plurality of switching elements 60U of the third semiconductor device 10C, and the switching elements 232 of the W-phase inverter circuit 230 are composed of a plurality of switching elements 60L of the third semiconductor device 10C.

[0249] In the inverter device 200, a DC power supply 240 is electrically connected between the first power supply terminal 11 and the second power supply terminal 12 of each of the first semiconductor device 10A, the second semiconductor device 10B, and the third semiconductor device 10C. A three-phase drive motor 250 is electrically connected to the output terminals 13 of the first to third semiconductor devices 10A to 10C. A DC voltage of, for example, 500 V or more and 2000 V or less is applied between the first power supply terminal 11 and the second power supply terminal 12, with the second power supply terminal 12 serving as a reference potential.

[0250] In the inverter device 200, the on / off of the multiple switching elements 60U, 60L of the first to third semiconductor devices 10A to 10C is controlled based on a predetermined energization method. Examples of the energization method include sine wave driving and square wave driving. In the case of sine wave driving, the motor efficiency of the three-phase drive motor 250 can be improved. In the case of square wave driving, the switching loss in the first to third semiconductor devices 10A to 10C can be reduced.

[0251] <Example of change> The above-described embodiments can be modified as follows: Furthermore, the above-described embodiments and the following modifications can be combined with each other within the scope of technical compatibility.

[0252] In the first embodiment, the shapes of the tip portions 41A to 44A of the first to fourth wiring portions 41 to 44 can be changed as desired. For example, the tip portion 41A of the first wiring portion 41 may extend in the X direction toward the second switching element 62A. For example, the tip portion 42A of the second wiring portion 42 may extend in the X direction toward the first switching element 61A. For example, the tip portion 43A of the third wiring portion 43 may extend in the X direction toward the fourth switching element 64A. For example, the tip portion 44A of the fourth wiring portion 44 may extend in the X direction toward the third switching element 63A.

[0253] In the first embodiment, the positional relationship in the Y direction between the first gate electrode G1 of the first switching element 61A and the first wiring portion 41 of the first gate wiring 40 can be arbitrarily changed. For example, the first gate electrode G1 may be located closer to the connecting portion 45 than the tip end 41A of the first wiring portion 41 in the Y direction. For example, the first gate electrode G1 may be located closer to the tip end 41A than the center of the first wiring portion 41 in the Y direction. The positional relationship in the Y direction between the second gate electrode G2 of the second switching element 62A and the second wiring portion 42 of the first gate wiring 40, the positional relationship in the Y direction between the third gate electrode G3 of the third switching element 63A and the third wiring portion 43 of the first gate wiring 40, and the positional relationship in the Y direction between the fourth gate electrode G4 of the fourth switching element 64A and the fourth wiring portion 44 of the first gate wiring 40 can also be arbitrarily changed. For example, the second gate electrode G2 may be located closer to the tip end 42A than the center of the second wiring portion 42 in the Y direction. For example, the third gate electrode G3 may be arranged closer to the tip end 43A than the center in the Y direction of the third wiring portion 43. For example, the fourth gate electrode G4 may be arranged closer to the tip end 44A than the center in the Y direction of the fourth wiring portion 44.

[0254] In the third embodiment, the connection manner between the first gate electrodes G1 of the plurality of first switching elements 61A and the first wiring portion 41, the connection manner between the second gate electrodes G2 of the plurality of second switching elements 62A and the second wiring portion 42, the connection manner between the third gate electrodes G3 of the plurality of third switching elements 63A and the third wiring portion 43, and the connection manner between the fourth gate electrodes G4 of the plurality of fourth switching elements 64A and the fourth wiring portion 44 can each be changed arbitrarily.

[0255] 19, the semiconductor device 10 may include a plurality of first gate connection members 71A corresponding to the plurality of first switching elements 61A, a plurality of second gate connection members 72A corresponding to the plurality of second switching elements 62A, a plurality of third gate connection members 73A corresponding to the plurality of third switching elements 63A, and a plurality of fourth gate connection members 74A corresponding to the plurality of fourth switching elements 64A. In the example shown in FIG. 19, the plurality of first gate connection members 71A are individually connected to the plurality of first gate electrodes G1. The plurality of first gate connection members 71A are all connected to the tip portion 41A of the first wiring portion 41. The plurality of second gate connection members 72A are individually connected to the plurality of second gate electrodes G2. The plurality of second gate connection members 72A are all connected to the tip portion 42A of the second wiring portion 42. The plurality of third gate connection members 73A are individually connected to the plurality of third gate electrodes G3. The plurality of third gate connection members 73A are all connected to the tip portion 43A of the third wiring portion 43. The plurality of fourth gate connection members 74A are individually connected to the plurality of fourth gate electrodes G4. The plurality of fourth gate connection members 74A are all connected to the tip portion 44A of the fourth wiring portion 44. Due to this connection mode, the lengths of the plurality of first gate connection members 71A are different from one another. The lengths of the plurality of second gate connection members 72A are different from one another. The lengths of the plurality of third gate connection members 73A are different from one another. The lengths of the plurality of fourth gate connection members 74A are different from one another.

[0256] Although not shown, the semiconductor device 10 may also include a plurality of first gate connecting members 71B corresponding to the plurality of first switching elements 61B, a plurality of second gate connecting members 72B corresponding to the plurality of second switching elements 62B, a plurality of third gate connecting members 73B corresponding to the plurality of third switching elements 63B, and a plurality of fourth gate connecting members 74B corresponding to the plurality of fourth switching elements 64B. The connection between these may be similar to the connection shown in FIG. 19, for example.

[0257] In each embodiment, the configuration of the first gate wiring 40 and the second gate wiring 50 can be changed as desired. For example, as shown in FIG. 20, the first to fourth wiring portions 41 to 44 of the first gate wiring 40 may extend in the Y direction from the connecting portion 45 toward the fourth substrate side surface 26 (see FIG. 2). The first to fourth wiring portions 41 to 44 are spaced apart from one another in the X direction. The third wiring portion 43 and the fourth wiring portion 44 are located between the first wiring portion 41 and the second wiring portion 42. The first wiring portion 41 is located closer to the multiple first switching elements 61A. The second wiring portion 42 is located closer to the multiple second switching elements 62A. The third wiring portion 43 is adjacent to the first wiring portion 41 in the X direction. The fourth wiring portion 44 is adjacent to the second wiring portion 42 in the X direction. The Y-direction length of the third wiring portion 43 and the Y-direction length of the fourth wiring portion 44 are longer than the Y-direction length of the first wiring portion 41 and the Y-direction length of the second wiring portion 42. Therefore, the tip portion 43A of the third wiring portion 43 and the tip portion 44A of the fourth wiring portion 44 are disposed closer to the bottom surface of the recess 33G in the third power supply wiring 33 than the tip portion 41A of the first wiring portion 41 and the tip portion 42A of the second wiring portion 42. Here, the bottom surface of the recess 33G is the bottom surface when viewed from the opening of the recess 33G, and is defined by the side surfaces that form the recess 33G in the element connection portion 33C of the third power supply wiring 33.

[0258] The multiple first switching elements 61A are arranged at the same position in the Y direction and spaced apart from one another in the X direction. The multiple third switching elements 63A are arranged at the same position in the Y direction and spaced apart from one another in the X direction. The multiple third switching elements 63A are arranged closer to the fourth substrate side surface 26 than the multiple first switching elements 61A and adjacent to the multiple first switching elements 61A in the Y direction.

[0259] The multiple first switching elements 61A are arranged in an orientation such that the first gate electrode G1 is located on the side away from the first wiring portion 41 in the X direction. The multiple third switching elements 63A are arranged in an orientation such that the third gate electrode G3 is located on the side away from the third wiring portion 43 in the X direction. In this way, the multiple first switching elements 61A and the multiple third switching elements 63A are arranged in the same orientation.

[0260] The second switching elements 62A are arranged in an orientation such that the second gate electrodes G2 are positioned on the side away from the second wiring portion 42 in the X direction. The fourth switching elements 64A are arranged in an orientation such that the fourth gate electrodes G4 are positioned on the side away from the fourth wiring portion 44 in the X direction. In this manner, the second switching elements 62A and the fourth switching elements 64A are arranged in the same orientation as each other. Furthermore, the second switching elements 62A and the fourth switching elements 64A are arranged in an opposite orientation in the X direction to the first switching elements 61A and the third switching elements 63A.

[0261] The first gate connecting member 71A connects the first gate electrodes G1 of the multiple first switching elements 61A to each other and the tip portion 41A of the first wiring portion 41. The second gate connecting member 72A connects the second gate electrodes G2 of the multiple second switching elements 62A to each other and the tip portion 42A of the second wiring portion 42. The third gate connecting member 73A connects the third gate electrodes G3 of the multiple third switching elements 63A to each other and the tip portion 43A of the third wiring portion 43. The fourth gate connecting member 74A connects the fourth gate electrodes G4 of the multiple fourth switching elements 64A to each other and the tip portion 44A of the fourth wiring portion 44.

[0262] The coupling portion 45 is arranged to be shifted in the Y direction with respect to the first to fourth switching elements 61A to 64A. In the example shown in Fig. 20, the coupling portion 45 is arranged closer to the recess 31F with respect to the first to fourth switching elements 61A to 64A. The Y direction length of the first to fourth wiring portions 41 to 44 can be increased by the amount that the coupling portion 45 is separated from the first to fourth switching elements 61A to 64A in the Y direction.

[0263] According to this configuration, the distance between the first gate electrode G1 and the first wiring portion 41 in the X direction and the distance between the second gate electrode G2 and the second wiring portion 42 in the X direction are increased, thereby making it possible to lengthen the current path between the first gate electrode G1 and the second gate electrode G2. Furthermore, the distance between the third gate electrode G3 and the third wiring portion 43 in the X direction and the distance between the fourth gate electrode G4 and the fourth wiring portion 44 in the X direction are increased, making it possible to lengthen the current path between the third gate electrode G3 and the fourth gate electrode G4. This increases the gate stray inductance, thereby making it possible to suppress the occurrence of oscillation.

[0264] The connection between the plurality of first gate electrodes G1 and the first wiring portion 41, the connection between the plurality of second gate electrodes G2 and the second wiring portion 42, the connection between the plurality of third gate electrodes G3 and the third wiring portion 43, and the connection between the plurality of fourth gate electrodes G4 and the fourth wiring portion 44 can be changed as desired. FIG. 21 shows an example in which these connection modes are changed. As shown in FIG. 21, the semiconductor device 10 may include a plurality of first gate connection members 71A corresponding to the plurality of first switching elements 61A, a plurality of second gate connection members 72A corresponding to the plurality of second switching elements 62A, a plurality of third gate connection members 73A corresponding to the plurality of third switching elements 63A, and a plurality of fourth gate connection members 74A corresponding to the plurality of fourth switching elements 64A. In the example shown in FIG. 21, the plurality of first gate connection members 71A are individually connected to the plurality of first gate electrodes G1. The plurality of first gate connection members 71A are all connected to the tip portion 41A of the first wiring portion 41. The plurality of second gate connection members 72A are individually connected to the plurality of second gate electrodes G2. The plurality of second gate connection members 72A are all connected to the tip portion 42A of the second wiring portion 42. The plurality of third gate connection members 73A are individually connected to the plurality of third gate electrodes G3. The plurality of third gate connection members 73A are all connected to the tip portion 43A of the third wiring portion 43. The plurality of fourth gate connection members 74A are individually connected to the plurality of fourth gate electrodes G4. The plurality of fourth gate connection members 74A are all connected to the tip portion 44A of the fourth wiring portion 44. Due to this connection mode, the lengths of the plurality of first gate connection members 71A are different from one another. The lengths of the plurality of second gate connection members 72A are different from one another. The lengths of the plurality of third gate connection members 73A are different from one another. The lengths of the plurality of fourth gate connection members 74A are different from one another.

[0265] 20 and 21 can also be applied to, for example, the multiple switching elements 60L and the second gate wiring 50. This makes it possible to similarly suppress the occurrence of oscillation in the multiple switching elements 60L and the second gate wiring 50.

[0266] 22, the first gate wiring 40 may include a configuration surrounding a plurality of first switching elements 61A and a plurality of third switching elements 63A, and a configuration surrounding a plurality of second switching elements 62A and a plurality of fourth switching elements 64A. More specifically, the first wiring portion 41 and the second wiring portion 42 extend in the Y direction from the connecting portion 45 toward the bottom surface of the recess 33G of the third power supply wiring 33. The first wiring portion 41 and the second wiring portion 42 are spaced apart from each other in the X direction. The first wiring portion 41 includes a connecting portion 41B provided between the connecting portion 45 and the tip portion 41A in the Y direction. In the example shown in FIG. 22, the connecting portion 41B is provided closer to the tip portion 41A than the connecting portion 45 in the Y direction. The second wiring portion 42 includes a connecting portion 42B provided between the connecting portion 45 and the tip portion 42A in the Y direction. 22, the connection portion 42B is provided closer to the tip portion 42A in the Y direction than the coupling portion 45. In one example, the connection portion 42B is provided at the same position as the connection portion 41B of the first wiring portion 41 in the Y direction.

[0267] The multiple first switching elements 61A are arranged at the same position in the X direction and spaced apart from each other in the Y direction. Each first switching element 61A is arranged on the opposite side of the first wiring portion 41 from the second wiring portion 42 in the X direction. Each first switching element 61A is arranged such that its first gate electrode G1 is located on the opposite side of the first wiring portion 41 in the X direction from the first wiring portion 41. One of the multiple first switching elements 61A is arranged such that its first gate electrode G1 is located at the same position as the tip portion 41A of the first wiring portion 41 in the Y direction. The first gate electrode G1 of the one first switching element 61A and the tip portion 41A of the first wiring portion 41 are electrically connected by one first gate connecting member 71A. Another first switching element 61A is arranged such that its first gate electrode G1 is located at the same position as the connection portion 41B of the first wiring portion 41 in the Y direction. The first gate electrode G1 of the other first switching element 61A and the connection portion 41B of the first wiring portion 41 are electrically connected by another first gate connection member 71A.

[0268] The multiple second switching elements 62A are arranged at the same position in the X direction and spaced apart from each other in the Y direction. Each second switching element 62A is arranged on the opposite side of the first wiring portion 41 with respect to the second wiring portion 42 in the X direction. In one example, the multiple second switching elements 62A are arranged at the same position as the multiple first switching elements 61A in the Y direction. Each second switching element 62A is arranged such that its second gate electrode G2 is located on the opposite side of the second wiring portion 42 in the X direction. One of the multiple second switching elements 62A is arranged such that its second gate electrode G2 is located at the same position as the tip portion 42A of the second wiring portion 42 in the Y direction. The second gate electrode G2 of the single second switching element 62A and the tip portion 42A of the second wiring portion 42 are electrically connected by one second gate connecting member 72A. Another second switching element 62A is disposed so that the second gate electrode G2 is at the same position in the Y direction as the connection portion 42B of the second wiring portion 42. The second gate electrode G2 of the other second switching element 62A and the connection portion 42B of the second wiring portion 42 are electrically connected by another second gate connection member 72A.

[0269] The multiple third switching elements 63A are arranged at the same positions in the X direction and spaced apart from each other in the Y direction. The multiple third switching elements 63A are arranged at the same positions in the Y direction as the multiple first switching elements 61A. The multiple third switching elements 63A are arranged on the opposite side of the multiple first switching elements 61A from the first wiring portion 41 and at positions adjacent to the multiple first switching elements 61A in the X direction.

[0270] The multiple fourth switching elements 64A are arranged at the same positions in the X direction and spaced apart from each other in the Y direction. The multiple fourth switching elements 64A are arranged at the same positions in the Y direction as the multiple second switching elements 62A. The multiple fourth switching elements 64A are arranged on the opposite side of the multiple second switching elements 62A from the second wiring portion 42 and at positions adjacent to the multiple second switching elements 62A in the X direction.

[0271] The third wiring portion 43 is provided to surround the plurality of first switching elements 61A and the plurality of third switching elements 63A from the third substrate side surface 25 side and the first substrate side surface 23 side. The third wiring portion 43 includes a connecting portion 43P extending in the X direction from the connecting portion 45 toward the first substrate side surface 23, and a first gate connection portion 43Q extending in the Y direction from the connecting portion 43P toward the fourth substrate side surface 26.

[0272] The linking portion 43P is disposed closer to the third substrate side surface 25 than the plurality of first switching elements 61A and the plurality of third switching elements 63A. The first gate connection portion 43Q is disposed on the opposite side of the first wiring portion 41 from the plurality of first switching elements 61A and the plurality of third switching elements 63A in the X direction. The first gate connection portion 43Q includes a tip portion 43A and a connection portion 43B. The tip portion 43A is configured as an end portion of the first gate connection portion 43Q that is closer to the fourth substrate side surface 26. The connection portion 43B is provided closer to the tip portion 43A than the linking portion 43P is to the first gate connection portion 43Q.

[0273] The multiple third switching elements 63A are arranged such that their third gate electrodes G3 are oriented opposite to the first gate connection portion 43Q in the X direction. One of the multiple third switching elements 63A is arranged such that its third gate electrode G3 is located at the same position as the tip portion 43A of the first gate connection portion 43Q in the Y direction. The third gate electrode G3 of the single third switching element 63A and the tip portion 43A of the first gate connection portion 43Q are electrically connected by a single third gate connection member 73A. Another single third switching element 63A is arranged such that its third gate electrode G3 is located at the same position as the connection portion 43B of the first gate connection portion 43Q in the Y direction. The third gate electrode G3 of the other single third switching element 63A and the connection portion 43B of the first gate connection portion 43Q are electrically connected by a single third gate connection member 73A.

[0274] The fourth wiring portion 44 is provided to surround the plurality of second switching elements 62A and the plurality of fourth switching elements 64A from the third substrate side surface 25 side and the second substrate side surface 24 side. The fourth wiring portion 44 includes a coupling portion 44P extending in the X direction from the coupling portion 45 toward the second substrate side surface 24, and a second gate connection portion 44Q extending in the Y direction from the coupling portion 44P toward the fourth substrate side surface 26.

[0275] The coupling portion 44P is disposed closer to the third substrate side surface 25 than the plurality of second switching elements 62A and the plurality of fourth switching elements 64A. The second gate connection portion 44Q is disposed on the opposite side of the second wiring portion 42 in the X direction than the plurality of second switching elements 62A and the plurality of fourth switching elements 64A. The second gate connection portion 44Q includes a tip portion 44A and a connection portion 44B. The tip portion 44A is configured as an end portion of the second gate connection portion 44Q that is closer to the fourth substrate side surface 26. The connection portion 44B is provided closer to the tip portion 44A than the coupling portion 44P is to the second gate connection portion 44Q.

[0276] The multiple fourth switching elements 64A are arranged such that their fourth gate electrodes G4 are oriented opposite the second gate connection portion 44Q in the X direction. One of the multiple fourth switching elements 64A is arranged such that its fourth gate electrode G4 is located at the same position as the tip portion 44A of the second gate connection portion 44Q in the Y direction. The fourth gate electrode G4 of the single fourth switching element 64A and the tip portion 44A of the second gate connection portion 44Q are electrically connected by a single fourth gate connection member 74A. Another single fourth switching element 64A is arranged such that its fourth gate electrode G4 is located at the same position as the connection portion 44B of the second gate connection portion 44Q in the Y direction. The fourth gate electrode G4 of the other single fourth switching element 64A and the connection portion 44B of the second gate connection portion 44Q are electrically connected by a single third gate connection member 73A.

[0277] The coupling portion 45 is arranged offset in the Y direction with respect to the first to fourth switching elements 61A to 64A. In the example shown in FIG. 22, the coupling portion 45 is arranged closer to the recess 31F with respect to the first to fourth switching elements 61A to 64A. The Y-direction length of the first wiring portion 41, the Y-direction length of the second wiring portion 42, the Y-direction length of the first gate connection portion 43Q of the third wiring portion 43, and the Y-direction length of the second gate connection portion 44Q of the fourth wiring portion 44 can each be increased by the amount of the coupling portion 45 being separated in the Y direction from the first to fourth switching elements 61A to 64A. Note that the multiple switching elements 60L and the second gate wiring 50 may also be similarly changed.

[0278] In each embodiment, the connection position between the first gate connecting member 71A and the first wiring portion 41 of the first gate wiring 40 can be changed as desired. The first gate connecting member 71A may be connected to a portion of the first wiring portion 41 that is closer to the coupling portion 45 than the tip portion 41A. Note that the connection positions between the second gate connecting members 72A-74A and the second-fourth wiring portions 42-44 can also be changed as desired. Similarly, the connection positions between the first-fourth gate connecting members 71B-74B and the first-fourth wiring portions 51-54 of the second gate wiring 50 can also be changed as desired.

[0279] In the first gate wiring 40 of each embodiment, the positional relationship between the first wiring portion 41 and the third wiring portion 43 in the X direction can be changed arbitrarily. For example, the third wiring portion 43 may be disposed at a different position from the first wiring portion 41 in the X direction. The positional relationship between the second wiring portion 42 and the fourth wiring portion 44 in the X direction can be changed arbitrarily. For example, the fourth wiring portion 44 may be disposed at a different position from the second wiring portion 42 in the X direction. The first to fourth wiring portions 51 to 54 of the second gate wiring 50 can be changed in the same way.

[0280] In each embodiment, the third wiring portion 43 and the fourth wiring portion 44 may be omitted from the first gate wiring 40. In this case, the third switching element 63A and the fourth switching element 64A may be omitted from the multiple switching elements 60U. Fig. 23 shows a planar structure of a portion of the semiconductor device 10 in which the third wiring portion 43, the fourth wiring portion 44, the third switching element 63A, and the fourth switching element 64A are omitted.

[0281] As shown in FIG. 23 , the first gate wiring 40 includes a connecting portion 45 and a first wiring portion 41 and a second wiring portion 42 extending from the connecting portion 45 in the Y direction. The first wiring portion 41 and the second wiring portion 42 are disposed at the same position in the Y direction and spaced apart from each other in the X direction. The first switching element 61A is disposed on the opposite side of the first wiring portion 41 from the second wiring portion 42 in the X direction. The second switching element 62A is disposed on the opposite side of the second wiring portion 42 from the first wiring portion 41 in the X direction. It can be said that the second wiring portion 42 is disposed closer to the second switching element 62A in the X direction than the first wiring portion 41. The first gate connecting member 71A is connected to the tip portion 41A of the first wiring portion 41. The second gate connecting member 72A is connected to the tip portion 42A of the second wiring portion 42. This configuration achieves the same effects as the first embodiment. Note that the second gate wiring 50 can also be modified in a similar manner.

[0282] In each embodiment, the first to fourth gate connection members 71A to 74A, 71B to 74B are not limited to bonding wires and can be changed as desired. For example, the first to fourth gate connection members 71A to 74A, 71B to 74B may be formed by combining vias and wiring layers.

[0283] In each embodiment, the first source connection members 81A, 81B and the second source connection members 82A, 82B are not limited to bonding wires and can be changed as desired. For example, the first source connection members 81A, 81B and the second source connection members 82A, 82B may be formed of clips.

[0284] In each embodiment, the positional relationship between the first wiring portion 41 and the third wiring portion 43 in the X direction and the positional relationship between the second wiring portion 42 and the fourth wiring portion 44 in the X direction can be changed as desired. In one example, the first wiring portion 41 may be positioned offset from the third wiring portion 43 in the X direction. In another example, the second wiring portion 42 may be positioned offset from the fourth wiring portion 44 in the X direction.

[0285] In each embodiment, the positional relationship in the Y direction between the first gate electrode G1 and the first wiring portion 41 of the first switching element 61A can be changed arbitrarily. For example, the first gate electrode G1 may be located between the center of the first wiring portion 41 and the tip end 41A in the Y direction. The positional relationship in the Y direction between the second gate electrode G2 and the second wiring portion 42 of the second switching element 62A, the positional relationship in the Y direction between the third gate electrode G3 and the third wiring portion 43 of the third switching element 63A, and the positional relationship in the Y direction between the fourth gate electrode G4 and the fourth wiring portion 44 of the fourth switching element 64A can also be changed in a similar manner. The positional relationship in the Y direction between the first to fourth gate electrodes G1 to G4 of the first to fourth switching elements 61B to 64B and the first to fourth wiring portions 51 to 54 of the second gate wiring 50 can also be changed in a similar manner.

[0286] In each embodiment, the relationship between the widths of the tip portions 41A-44A of the first to fourth wiring portions 41-44 of the first gate wiring 40 and the widths W1-W4 of the portions of the first to fourth wiring portions 41-44 that are different from the tip portions 41A-44A can be changed as desired. In one example, the widths of the tip portions 41A-44A of the first to fourth wiring portions 41-44 of the first gate wiring 40 and the widths W1-W4 of the portions of the first to fourth wiring portions 41-44 that are different from the tip portions 41A-44A may be equal to each other.

[0287] In each embodiment, the extending direction of the first to fourth wiring portions 41 to 44 of the first gate wiring 40 in a plan view is not limited to a direction perpendicular to the X direction (Y direction). The extending direction of the first to fourth wiring portions 41 to 44 in a plan view may be any direction intersecting with the X direction. Similarly, the extending direction of the first to fourth wiring portions 51 to 54 of the second gate wiring 50 may be any direction intersecting with the X direction in a plan view.

[0288] One or more of the various examples described in the present disclosure may be combined to the extent that they are not technically inconsistent. The term "on" as used in this disclosure includes the meanings of "on" and "above" unless the context clearly indicates otherwise. Thus, for example, the expression "a first element is disposed on a second element" means that in some embodiments, the first element may be disposed directly on the second element in contact with the second element, while in other embodiments, the first element may be disposed above the second element without contacting the second element. In other words, the term "on" does not exclude a structure in which another element is formed between the first element and the second element.

[0289] The Z direction used in this disclosure does not necessarily have to be the vertical direction, nor does it have to completely coincide with the vertical direction. Therefore, various structures according to this disclosure are not limited to the "up" and "down" of the Z direction described in this disclosure being "up" and "down" of the vertical direction. For example, the X direction may be the vertical direction, or the Y direction may be the vertical direction.

[0290] <Additional Notes> The technical ideas that can be understood from the present disclosure are described below. Note that, for the purpose of aiding understanding and not intending to be limiting, the components described in the appendices are given the reference numerals of the corresponding components in the above embodiment. The reference numerals are shown as examples to aid understanding, and the components described in each appendix should not be limited to the components indicated by the reference numerals.

[0291] [Appendix 1] a first switching element (61A) including a first gate electrode (G1); a second switching element (62A) including a second gate electrode (G2), spaced apart from the first switching element (61A) in the first direction (X), and connected in parallel with the first switching element (61A); a gate wiring (40) disposed between the first switching element (61A) and the second switching element (62A) in the first direction (X); a first gate connection member (71A) that connects the first gate electrode (G1) and the gate wiring (40); a second gate connection member (72A) that connects the second gate electrode (G2) and the gate wiring (40); Including, The gate wiring (40) a first wiring portion (41) extending in a second direction (Y) intersecting the first direction (X) in a plan view seen from a thickness direction (Z) of the first switching element (61A); a second wiring portion (42) that is disposed closer to the second switching element (62A) in the first direction (X) than the first wiring portion (41) and that extends in the second direction (Y) in the plan view; a connecting portion (45) that connects the first wiring portion (41) and the second wiring portion (42); Including, the first gate connection member (71A) is connected to the first wiring portion (41) at a position spaced apart from the coupling portion (45) in the second direction (Y); The second gate connection member (72A) is connected to the second wiring portion (42) at a position spaced apart from the coupling portion (45) in the second direction (Y). A semiconductor device (10).

[0292] [Appendix 2] the first gate connection member (71A) is connected to a tip end (41A) of the first wiring portion (41) that is spaced apart from the coupling portion (45) in the second direction (X); The second gate connection member (72A) is connected to a tip portion (42A) of the second wiring portion (42) that is spaced apart from the coupling portion (45) in the second direction (Y). 2. The semiconductor device according to claim 1.

[0293] [Appendix 3] Both the length (LY1) of the first wiring portion (41) in the second direction (Y) and the length (LY2) of the second wiring portion (42) in the second direction (Y) are longer than the distance (DX1) between the first wiring portion (41) and the second wiring portion (42) in the first direction (X). 3. The semiconductor device according to claim 1 or 2.

[0294] [Appendix 4] a length (LY1) of the first wiring portion (41) in the second direction (Y) is longer than a length (SY1) of the first switching element (61A) in the second direction (Y); The length (LY2) of the second wiring portion (42) in the second direction (Y) is longer than the length (SY2) of the second switching element (62A) in the second direction (Y). 4. The semiconductor device according to any one of claims 1 to 3.

[0295] [Appendix 5] The sum of the length (LY1) of the first wiring portion (41) in the second direction (Y), the length of the first gate connection member (71A) in the plan view, the length (LY2) of the second wiring portion (42) in the second direction (Y), and the length of the second gate connection member (72A) in the plan view is greater than a first gate-to-gate distance (GD1) that is the distance between the first gate electrode (G1) and the second gate electrode (G2) in the plan view. 5. The semiconductor device according to any one of claims 1 to 4.

[0296] [Appendix 6] the first gate electrode (G1) is disposed closer to a tip end (41A) of the first wiring portion (41) that is spaced apart from the connecting portion (45) in the second direction (Y) than to a center of the first wiring portion (41) in the second direction (Y), The second gate electrode (G2) is disposed closer to a tip portion (42A) of the second wiring portion (42) that is spaced apart from the connecting portion (45) in the second direction (Y) than to a center of the second wiring portion (42) in the second direction (Y). 6. The semiconductor device according to any one of claims 1 to 5.

[0297] [Appendix 7] The length (LY1) of the first wiring portion (41) in the second direction (Y) is equal to the length (LY2) of the second wiring portion (42) in the second direction (Y). 7. The semiconductor device according to any one of claims 1 to 6.

[0298] [Appendix 8] a gate terminal (14) electrically connected to the connecting portion (45); Both the first wiring portion (41) and the second wiring portion (42) extend from the connecting portion (45) in the second direction (Y). 8. The semiconductor device according to claim 7.

[0299] [Appendix 9] a third switching element (63A) including a third gate electrode (G3), disposed at a position spaced apart from the first switching element (61A) in the second direction (Y) and closer to the first switching element (61A) with respect to the gate wiring (40) in the first direction (X), and connected in parallel with the first switching element (61A) and the second switching element (62A); a fourth switching element (64A) including a fourth gate electrode (G4), arranged at a position spaced apart from the second switching element (62A) in the second direction (Y) and closer to the second switching element (62A) with respect to the gate wiring (40) in the first direction (X), and connected in parallel with the first switching element (61A), the second switching element (62A), and the third switching element (63A); a third gate connection member (73A) that connects the third gate electrode (G3) and the gate wiring (40); a fourth gate connection member (74A) that connects the fourth gate electrode (G4) and the gate wiring (40); Including, The gate wiring (40) a third wiring portion (43) extending in the second direction (Y) at a position spaced apart from the first wiring portion (41) in the second direction (Y); a fourth wiring portion (44) extending in the second direction (Y) at a position spaced apart from the second wiring portion (42) in the second direction (Y); Including, the connecting portion (45) is disposed between the first wiring portion (41) and the third wiring portion (43) in the second direction (Y) and between the second wiring portion (42) and the fourth wiring portion (44) in the second direction (Y), and connects the first wiring portion (41), the second wiring portion (42), the third wiring portion (43), and the fourth wiring portion (44); the third gate connection member (73A) is connected to the third wiring portion (43) at a position spaced apart from the coupling portion (45) in the second direction (Y), The fourth gate connection member (74A) is connected to the fourth wiring portion (44) at a position spaced apart from the coupling portion (45) in the second direction (Y). 9. The semiconductor device according to any one of appendices 1 to 8.

[0300] [Appendix 10] the third gate connection member (73A) is connected to a tip end portion (43A) of the third wiring portion (43) that is spaced apart from the coupling portion (45) in the second direction (Y), The fourth gate connection member (74A) is connected to a tip portion (44A) of the fourth wiring portion (44) that is spaced apart from the coupling portion (45) in the second direction (Y). 10. The semiconductor device according to claim 9.

[0301] [Appendix 11] Both the length (LY3) of the third wiring portion (43) in the second direction (Y) and the length (LY4) of the fourth wiring portion (44) in the second direction (Y) are longer than the distance (DX2) between the third wiring portion (43) and the fourth wiring portion (44) in the first direction (X). 11. The semiconductor device according to claim 9 or 10.

[0302] [Appendix 12] a length (LY3) in the second direction (Y) of the third wiring portion (43) is longer than a length (SY3) in the second direction (Y) of the third switching element (63A); The length (LY4) of the fourth wiring portion (44) in the second direction (Y) is longer than the length (SY4) of the fourth switching element (64A) in the second direction (Y). 12. The semiconductor device according to any one of claims 9 to 11.

[0303] [Appendix 13] the third gate electrode (G3) is disposed closer to a tip end (45A) of the third wiring portion (43) that is spaced apart from the connecting portion (45) in the second direction (Y) than to a center of the third wiring portion (43) in the second direction (Y), The fourth gate electrode (G4) is disposed closer to a tip portion (45A) of the fourth wiring portion (44) that is spaced apart from the connecting portion (45) in the second direction (Y) than to a center of the fourth wiring portion (44) in the second direction (Y). 13. The semiconductor device according to any one of claims 9 to 12.

[0304] [Appendix 14] The sum of the length (LY3) of the third wiring portion (43) in the second direction (Y), the length of the third gate connection member (73A) in the plan view, the length (LY4) of the fourth wiring portion (44) in the second direction (Y), and the length of the fourth gate connection member (74A) in the plan view is greater than a second gate distance (GD2) that is the distance between the third gate electrode (G3) and the fourth gate electrode (G4) in the plan view. 14. The semiconductor device according to any one of claims 9 to 13.

[0305] [Appendix 15] The second gate distance (GD2) is equal to the first gate distance (GD1) which is the distance between the first gate electrode (G1) and the second gate electrode (G2) in the plan view. 15. The semiconductor device according to claim 14.

[0306] [Appendix 16] a gate terminal (14) electrically connected to the connecting portion (45); The length (LY3) of the third wiring portion (43) in the second direction (Y) is equal to the length (LY4) of the fourth wiring portion (44) in the second direction (Y). 16. The semiconductor device according to any one of claims 9 to 15.

[0307] [Appendix 17] a gate terminal (14) electrically connected to the connecting portion (45); a length (LY3) of the third wiring portion (43) in the second direction (Y) is equal to a length (LY1) of the first wiring portion (41) in the second direction (Y); The length (LY4) of the fourth wiring portion (44) in the second direction (Y) is equal to the length (LY2) of the second wiring portion (42) in the second direction (Y). 17. The semiconductor device according to any one of claims 9 to 16.

[0308] [Appendix 18] a third switching element (63A) including a third gate electrode (G3), disposed at a position spaced apart from the first switching element (61A) in the second direction (Y) and closer to the first switching element (61A) with respect to the gate wiring (40) in the first direction (X), and connected in parallel with the first switching element (61A) and the second switching element (62A); a fourth switching element (64A) including a fourth gate electrode (G4), arranged at a position spaced apart from the second switching element (62A) in the second direction (Y) and closer to the second switching element (62A) with respect to the gate wiring (40) in the first direction (X), and connected in parallel with the first switching element (61A), the second switching element (62A), and the third switching element (63A); a third gate connection member (73A) that connects the third gate electrode (G3) and the gate wiring (40); a fourth gate connection member (74A) that connects the fourth gate electrode (G4) and the gate wiring (40); Including, The gate wiring (40) a third wiring portion (43) that is located at the same position as the first wiring portion (41) in the second direction (Y) and at a position separated from the first wiring portion (41) in the first direction (X), and that extends in the second direction (Y); a fourth wiring portion (44) that is located at the same position as the second wiring portion (42) in the second direction (Y) and at a position separated from the second wiring portion (42) in the first direction (X), and that extends in the second direction (Y); Including, the connecting portion (45) connects the first wiring portion (41), the second wiring portion (42), the third wiring portion (43), and the fourth wiring portion (44); the third gate connection member (73A) is connected to the third wiring portion (43) at a position spaced apart from the coupling portion (45) in the second direction (Y), The fourth gate connection member (74A) is connected to the fourth wiring portion (44) at a position spaced apart from the coupling portion (45) in the second direction (Y). 9. The semiconductor device according to any one of appendices 1 to 8.

[0309] [Appendix 19] the third wiring portion (43) and the fourth wiring portion (44) are disposed between the first wiring portion (41) and the second wiring portion (42) in the first direction (X); The lengths (LY3, LY4) of both the third wiring portion (43) and the fourth wiring portion (44) in the second direction (Y) are longer than the lengths (LY1, LY2) of both the first wiring portion (41) and the second wiring portion (42) in the second direction (Y). 19. The semiconductor device according to claim 18.

[0310] [Appendix 20] a third switching element (63A) including a third gate electrode (G3), disposed at a position spaced apart from the first switching element (61A) in the second direction (Y) and closer to the first switching element (61A) with respect to the gate wiring (40) in the first direction (X), and connected in parallel with the first switching element (61A) and the second switching element (62A); a fourth switching element (64A) including a fourth gate electrode (G4), arranged at a position spaced apart from the second switching element (62A) in the second direction (Y) and closer to the second switching element (62A) with respect to the gate wiring (40) in the first direction (X), and connected in parallel with the first switching element (61A), the second switching element (62A), and the third switching element (63A); a third gate connection member (73A) that connects the third gate electrode (G3) and the gate wiring (40); a fourth gate connection member (74A) that connects the fourth gate electrode (G4) and the gate wiring (40); Including, the gate wiring (40) includes a third wiring portion (43) and a fourth wiring portion (44) connected to the connecting portion (45); the third wiring portion (43) includes a first gate connection portion (43Q) arranged on the opposite side of the first wiring portion (41) with respect to both the first switching element (61A) and the third switching element (63A) in the first direction (X); the fourth wiring portion (44) includes a second gate connection portion (44Q) arranged on the opposite side of the second wiring portion (42) with respect to both the second switching element (62A) and the fourth switching element (64A) in the first direction (X), the third gate connecting member (73A) is connected to the first gate connecting portion (43Q), The fourth gate connecting member (74A) is connected to the second gate connecting portion (44Q). 9. The semiconductor device according to any one of appendices 1 to 8.

[0311] [Appendix 21] a plurality of the first switching elements (61A) and a plurality of the second switching elements (62A) are provided; The first switching elements (61A) are arranged adjacent to each other in the first direction (X), The second switching elements (62A) are arranged adjacent to each other in the first direction (X), the first gate connection member (71A) connects the first gate electrodes (G1) of the plurality of first switching elements (61A) and is connected to the first wiring portion (41) at a position spaced apart from the coupling portion (45) in the second direction (Y); The second gate connection member (72A) connects the second gate electrodes (G2) of the plurality of second switching elements (62A) and is connected to the second wiring portion (42) at a position spaced apart from the coupling portion (45) in the second direction (Y). 9. The semiconductor device according to any one of appendices 1 to 8.

[0312] [Appendix 22] a plurality of the first switching elements (61A) and a plurality of the second switching elements (62A) are provided; The first switching elements (61A) are arranged adjacent to each other in the first direction (X), The second switching elements (62A) are arranged adjacent to each other in the first direction (X), a plurality of the first gate connecting members (71A) are provided corresponding to the plurality of first switching elements (61A); a plurality of second gate connecting members (72A) are provided corresponding to the plurality of second switching elements (62A); the plurality of first gate connection members (71A) are individually connected to the first gate electrodes (G1) of the plurality of first switching elements (61A), and are connected to the first wiring portion (41) at positions spaced apart from the coupling portion (45) in the second direction (Y); The second gate connection members (72A) are individually connected to the second gate electrodes (G2) of the second switching elements (62A), and are connected to the second wiring portion (42) at positions spaced apart from the coupling portion (45) in the second direction (Y). 9. The semiconductor device according to any one of appendices 1 to 8.

[0313] [Appendix 23] a plurality of third switching elements (63A) each including a third gate electrode (G3), each of which is disposed at a position spaced apart from the first switching element (61A) in the second direction (Y) and closer to the first switching element (61A) with respect to the gate wiring (40) in the first direction (X), and which is connected in parallel with the plurality of first switching elements (61A) and the plurality of second switching elements (62A); a plurality of fourth switching elements (64A) including a fourth gate electrode (G4), arranged at a position spaced apart from the second switching element (62A) in the second direction (Y) and closer to the second switching element (62A) with respect to the gate wiring (40) in the first direction (X), and connected in parallel with the plurality of first switching elements (61A), the plurality of second switching elements (62A), and the plurality of third switching elements (63A); Including, The third switching elements (63A) are arranged adjacent to each other in the first direction (X), The fourth switching elements (64A) are arranged adjacent to each other in the first direction (X), The gate wiring (40) a third wiring portion (43) extending in the second direction (Y) at a position spaced apart from the first wiring portion (41) in the second direction (Y); a fourth wiring portion (44) extending in the second direction (Y) at a position spaced apart from the second wiring portion (42) in the second direction (Y); Including, the connecting portion (45) is disposed between the first wiring portion (41) and the third wiring portion (43) in the second direction (Y) and between the second wiring portion (42) and the fourth wiring portion (44) in the second direction (Y), and connects the first wiring portion (41), the second wiring portion (42), the third wiring portion (43), and the fourth wiring portion (44); a third gate connection member (73A) that connects the third gate electrodes (G3) of the plurality of third switching elements (63A) and is connected to the third wiring portion (43) at a position spaced apart from the coupling portion (45) in the second direction (Y); a fourth gate connection member (74A) that connects the fourth gate electrodes (G4) of the plurality of fourth switching elements (64A) and is connected to the fourth wiring portion (44) at a position spaced apart from the coupling portion (45) in the second direction (Y); Contains 22. The semiconductor device according to claim 21.

[0314] [Appendix 24] a plurality of third switching elements (63A) each including a third gate electrode (G3), each of which is disposed at a position spaced apart from the first switching element (61A) in the second direction (Y) and closer to the first switching element (61A) with respect to the gate wiring (40) in the first direction (X), and which is connected in parallel with the plurality of first switching elements (61A) and the plurality of second switching elements (62A); a plurality of fourth switching elements (64A) including a fourth gate electrode (G4), arranged at a position spaced apart from the second switching element (62A) in the second direction (Y) and closer to the second switching element (62A) with respect to the gate wiring (40) in the first direction (X), and connected in parallel with the plurality of first switching elements (61A), the plurality of second switching elements (62A), and the plurality of third switching elements (63A); Including, The third switching elements (63A) are arranged adjacent to each other in the first direction (X), The fourth switching elements (64A) are arranged adjacent to each other in the first direction (X), The gate wiring (40) a third wiring portion (43) extending in the second direction (Y) at a position spaced apart from the first wiring portion (41) in the second direction (Y); a fourth wiring portion (44) extending in the second direction (Y) at a position spaced apart from the second wiring portion (42) in the second direction (Y); Including, the connecting portion (45) is disposed between the first wiring portion (41) and the third wiring portion (43) in the second direction (Y) and between the second wiring portion (42) and the fourth wiring portion (44) in the second direction (Y), and connects the first wiring portion (41), the second wiring portion (42), the third wiring portion (43), and the fourth wiring portion (44); a plurality of third gate connection members (73A) that individually connect the third gate electrodes (G3) of the plurality of third switching elements (63A) and are connected to the third wiring portion (43) at positions spaced apart from the coupling portion (45) in the second direction (Y); a plurality of fourth gate connection members (74A) that individually connect the fourth gate electrodes (G4) of the plurality of fourth switching elements (64A) and are connected to the fourth wiring portion (44) at positions spaced apart from the coupling portion (45) in the second direction (Y); Contains 23. The semiconductor device according to claim 22.

[0315] [Appendix 25] The widths (W1, W2) of the first wiring portion (41) and the second wiring portion (42) are smaller than the width of the connecting portion (45). 9. The semiconductor device according to any one of appendices 1 to 8.

[0316] [Appendix 26] The widths (W1, W2, W3, W4) of the first wiring portion (41), the second wiring portion (42), the third wiring portion (43), and the fourth wiring portion (44) are each smaller than the width of the connecting portion (45). 21. The semiconductor device according to any one of claims 9 to 20.

[0317] [Appendix 27] an upper arm switching element (60U) and a lower arm switching element (60L) connected in series with each other; an upper arm power supply wiring (31) on which the upper arm switching element (60U) is mounted; a lower arm power supply wiring (33) disposed apart from the upper arm power supply wiring (31) and having the lower arm switching element (60L) mounted thereon; Including, the upper arm switching element (60U) includes the first switching element (61A) and the second switching element (62A), the lower arm switching element (60L) includes a fifth switching element (61B) and a sixth switching element (62B); The gate wiring is a first gate wiring (40) electrically connected to the first gate electrode (G1) of the first switching element (61A) and the second gate electrode (G2) of the second switching element (62A); a second gate wiring (50) electrically connected to a fifth gate electrode (G1) of the fifth switching element (61B) and a sixth gate electrode (G2) of the sixth switching element (62B); Contains 9. The semiconductor device according to any one of appendices 1 to 8.

[0318] [Appendix 28] the upper arm power supply wiring (31) and the lower arm power supply wiring (33) are arranged to be aligned in the second direction (Y); the upper arm power supply wiring (31) includes a first recess (31C) that opens toward the lower arm power supply wiring (33), The lower arm power supply wiring (33) is an element mounting portion (33B) on which the fifth switching element (61B) and the sixth switching element (62B) are mounted; a connecting portion (33C) extending in the second direction (Y) from the element mounting portion (33B) and disposed within the first recess (31C); Including, the connecting portion (33C) includes a second recess (33G) that opens on the opposite side to the first recess (31C) in the second direction (Y), the first gate wiring (40) is disposed in an opening formed by the first recess (31C) and the second recess (33G); The second gate wiring (50) is disposed in an opening (33D) of the element mounting portion (33B) provided between the fifth switching element (61B) and the sixth switching element (62B) in the first direction (X). 28. The semiconductor device according to claim 27.

[0319] [Appendix 29] the first switching element (61A) includes a first element surface (61S) on which the first gate electrode (G1) is provided, and a first source electrode (S1) provided on the first element surface (61S), the second switching element (62A) includes a second element surface (62S) on which the second gate electrode (G2) is provided, and a second source electrode (S2) provided on the second element surface (62S), a first power supply wiring (31) on which the first switching element (61A) and the second switching element (62A) are mounted; a second power supply wiring (32) disposed apart from the first power supply wiring (31) and electrically connected to the first source electrode (S1) and the second source electrode (S2); Including, A part of the second power supply wiring (32) is disposed between the first power supply wiring (31) and the gate wiring (40) in the first direction (X). 9. The semiconductor device according to any one of appendices 1 to 8.

[0320] [Appendix 30] The sum of the length (LY1) of the first wiring portion (41) in the second direction (Y), the length of the first gate connection member (71A) in the plan view, the length of the coupling portion (45) in the second direction (Y), the length (LY3) of the third wiring portion (43) in the second direction (Y), and the length of the third gate connection member (73A) in the plan view is greater than a third inter-gate distance (GD3) that is the distance between the first gate electrode (G1) and the third gate electrode (G3) in the plan view. 18. The semiconductor device according to any one of claims 9 to 17.

[0321] [Appendix 31] The sum of the length (LY2) of the second wiring portion (42) in the second direction (Y), the length of the second gate connection member (72A) in the plan view, the length of the coupling portion (45) in the second direction (Y), the length (LY4) of the fourth wiring portion (44) in the second direction (Y), and the length of the fourth gate connection member (74A) in the plan view is greater than a fourth gate-to-gate distance (GD4) that is the distance between the second gate electrode (G2) and the fourth gate electrode (G4) in the plan view. 18. The semiconductor device according to any one of claims 9 to 17.

[0322] [Appendix 32] The width of the tip end portion (41A) of the first wiring portion (41) is larger than the width of a portion of the first wiring portion (41) closer to the connecting portion (45) than the tip end portion (41A), The width of the tip end (42A) of the second wiring portion (42) is larger than the width of a portion of the second wiring portion (42) closer to the connecting portion than the tip end (42A). 3. The semiconductor device according to claim 2.

[0323] [Appendix 33] The width of the tip end portion (41A) of the first wiring portion (41) is larger than the width of a portion of the first wiring portion (41) closer to the connecting portion (45) than the tip end portion (41A), the width of the tip end portion (42A) of the second wiring portion (42) is larger than the width of a portion of the second wiring portion (42) closer to the connecting portion (45) than the tip end portion (42A); the width of the tip end portion (43A) of the third wiring portion (43) is larger than the width of a portion of the third wiring portion (43) closer to the connecting portion (45) than the tip end portion (43A); The width of the tip end (44A) of the fourth wiring portion (44) is larger than the width of a portion of the fourth wiring portion (44) closer to the connecting portion (45) than the tip end (44A). 11. The semiconductor device according to claim 10.

[0324] [Appendix 34] each of the first wiring portion (41) and the second wiring portion (42) includes a first side surface (FA1, FB1) and a second side surface (FA2, FA2) extending in the second direction (Y), and a third side surface (FA3, FB3) extending in the first direction (X); The connecting portion (45) includes a connecting side surface (FP1) that connects the first wiring portion (41) and the second wiring portion (42). 18. The semiconductor device according to any one of claims 1 to 17.

[0325] [Appendix 35] Each of the first wiring portion (41), the second wiring portion (42), the third wiring portion (43), and the fourth wiring portion (44) includes first side surfaces (FA1, FB1, FC1, FD1) and second side surfaces (FA2, FB2, FC2, FD2) extending in the second direction (Y), and third side surfaces (FA3, FB3, FC3, FD3) extending in the first direction (X), The connecting portion (45) is a first connecting side surface (FP1) connecting the first wiring portion (41) and the second wiring portion (42); a second connecting side surface (FP2) connecting the third wiring portion (43) and the fourth wiring portion (44); Contains 18. The semiconductor device according to any one of claims 9 to 17.

[0326] [Appendix 36] a fifth switching element (61B) and a sixth switching element (62B) connected in series with the first switching element (61A) and the second switching element (62A) and connected in parallel with each other; a first substrate (160) including a first substrate surface (161) and a second substrate surface (162) opposite to the first substrate surface (161); a first element mounting wiring (181) provided on the first substrate surface (161) of the first substrate (160), on which the first switching element (61A) and the second switching element (62A) are mounted; a second element mounting wiring (182) provided on the first substrate surface (161) of the first substrate (160), on which the fifth switching element (61B) and the sixth switching element (62B) are mounted; a second substrate (170) including a first substrate surface (171) and a second substrate surface (712) opposite to the first substrate surface (171), the second substrate (170) being disposed opposite the first substrate (160) while being spaced apart from the first substrate (160) in the thickness direction (Z) of the first substrate (160); a first power supply wiring (191) provided on the first substrate surface (171) of the second substrate (170) and arranged to face the first switching element (61A) and the second switching element (62A) in the thickness direction (Z); a second power supply wiring (192) provided on the first substrate surface (171) of the second substrate (170) and arranged to face the fifth switching element (61B) and the sixth switching element (62B) in the thickness direction (Z); a first source connection member (193) that individually connects the source electrodes (S1, S2) of the first switching element (61A) and the second switching element (62A) to the first power supply wiring (191); a second source connection member (194) that individually connects the source electrodes (S1, S2) of the fifth switching element (61B) and the sixth switching element (62B) to the second power supply wiring (192); Contains 9. The semiconductor device according to any one of appendices 1 to 8.

[0327] [Appendix 37] Both the first source connection member (193) and the second source connection member (194) are pillars. 37. The semiconductor device according to claim 36.

[0328] [Appendix 38] a first heat sink (167) provided on the second substrate surface (162) of the first substrate (160); a second heat sink (173) provided on the second substrate surface (172) of the second substrate (170); Contains 38. The semiconductor device according to claim 36 or 37.

[0329] [Appendix 39] An inverter device (200) including a first semiconductor device (10A) constituting a U-phase inverter circuit (210), a second semiconductor device (10B) constituting a V-phase inverter circuit (220), and a third semiconductor device (10C) constituting a W-phase inverter circuit (230), Each of the first semiconductor device (10A), the second semiconductor device (10B), and the third semiconductor device (10C) is configured by the semiconductor device (10) described in any one of Supplementary Notes 1 to 38. An inverter device (200).

[0330] The above description is merely illustrative. Those skilled in the art will recognize that many more possible combinations and permutations are possible other than the components and methods (manufacturing processes) listed for the purpose of illustrating the technology of the present disclosure. The present disclosure is intended to embrace all alternatives, modifications, and variations that fall within the scope of the present disclosure, including the claims. [Explanation of symbols]

[0331] 10...Semiconductor device 10A to 10C: First to third semiconductor devices 11…1st power supply terminal 12…Second power supply terminal 13...Output terminal 14...First gate terminal 15...Second gate terminal 16...First drain detection terminal 17...Second drain detection terminal 18...First source detection terminal 19...Second source detection terminal 20...Insulating substrate 21...First board surface 22...Second board surface 23~26...1st~4th board side 27...Heat sink 31...1st power supply wiring 31A...Terminal connection part 31B...Element mounting section 31C...recess 31D...First mounting section 31E…Second loading section 31F…recess 32…Second power supply wiring 32A...Terminal connection part 32B...Element connection part 32C...First connection part 32D...Second connection part 32E…Connection part 33…Third power supply wiring 33A...Terminal connection part 33B...Element mounting section 33C...Element connection part 33D...Opening 33E…First mounting section 33F…Second mounting section 33G...recess 33H...First connection part 33J...Second connection part 40...First gate wiring 41...1st wiring section 41A...Tip 41B...Connection 42…Second wiring section 42A...tip 42B...Connection 43...Third wiring section 43A…Tip 43B...Connection 43P…Connection part 43Q...First gate connection 44…4th wiring section 44A...tip 44B...Connection 44P...Connection part 44Q...Second gate connection 45...Connection part 50...Second gate wiring 51...1st wiring section 51A...Tip 52...Second wiring section 52A...Tip 53...Third wiring section 53A...Tip 54…4th wiring section 54A...Tip 55...Connection part 60U...Switching element 60L...Switching element 61A, 61B...First switching element 62A, 62B... Second switching element 63A, 63B...Third switching element 64A, 64B...Fourth switching element 61S~64S…1st~4th surface 61R~64R…1st~4th back side 71A, 71B...first gate connecting member (first connecting member) 72A, 72B...Second gate connecting members (second connecting members) 73A, 73B...Third gate connecting member (third connecting member) 74A, 74B...Fourth gate connecting member (fourth connecting member) 81A, 81B...First source connection members 82A, 82B...Second source connection members 100...Package body 101...Side 1 102…Second side 103~106...1st~4th side 110...1st power supply wiring 111, 112...Terminal connection part 113...First element mounting section 114...Second element mounting section 115…1st connection part 116...Second connection part 117…Third connection part 120…Second power supply wiring 121...Terminal connection part 122...First end connection part 123...Second end connection part 124...Central connection 125...1st connection part 126…Second connection part 127...First recess 128...Second recess 129...Opening 130...Third power supply wiring 131...First element mounting section 132...Second element mounting section 133...Connection part 134...First connection part 135...Second connection part 136...recess 140…4th power supply wiring 141...Terminal connection part 142...First end connection portion 143...Second end connection part 144...Central connection 145...First recess 146...Second recess 147...Opening 151 to 153...First to third wiring connection members 160...First board 161...First board surface 162...Second board surface 163~166...1st~4th board side 167...Heat sink 170...Second board 171...First board surface 172...Second board surface 173...Heat sink 181~187...1st~7th power supply wiring 181A...Element mounting section 181B...Terminal connection part 181C…Opening 181D...recess 184A...Element mounting section 184B...Connection 184C…Opening 184D...recess 184E…Extension part 188...First signal wiring 189...Second signal wiring 191...1st power supply wiring 192…Second power supply wiring 193...first source connection member 194...second source connection member 195...First wiring connection member 196...Second wiring connection member 197...Third wiring connection member 198...Fourth wiring connection member 199A~199D...Wire 200...Inverter device 210...U-phase inverter circuit 211, 212...Switching elements 220...V-phase inverter circuit 221, 222...Switching elements 230...W-phase inverter circuit 231, 232...Switching elements 240…DC power supply 250...Three-phase drive motor G1 to G4: First to fourth gate electrodes S1 to S4: First to fourth source electrodes D1 to D4: First to fourth drain electrodes SD: Conductive adhesive FA1, FB1, FC1, FD1...first side FA2, FB2, FC2, FD2...Second side FA3,FB3,FC3,FD3...Third side FA4,FB4,FC4,FD4...Fourth side FA5,FB5,FC5,FD5...5th side FP1...1st connection side FP2…Second connection side DX1: Distance between the first and second wiring sections in the X direction DX2: Distance between the third and fourth wiring sections in the X direction GD1: First gate distance GD2: Second gate distance GD3: Third gate distance GD4: Distance between 4th gates GE1: distance in the X direction between the first gate electrode and the tip of the first wiring portion GE2: distance in the X direction between the second gate electrode and the tip of the second wiring portion GE3: distance in the X direction between the third gate electrode and the tip of the third wiring portion GE4: distance in the X direction between the fourth gate electrode and the tip of the fourth wiring portion LY1: Length of the first wiring section in the Y direction LY2: Length of the second wiring section in the Y direction LY3: Length of the third wiring section in the Y direction LY4: Length of the fourth wiring section in the Y direction SY1: Length of the first switching element SY2: Length of the second switching element SY3: Length of the third switching element SY4: Length of the fourth switching element W1: Width of the first wiring section W2: Width of the second wiring section W3: Width of the third wiring section W4: Width of the fourth wiring section W5: Width of the first connection part of the third power supply wiring

Claims

1. a first switching element including a first gate electrode; a second switching element including a second gate electrode, spaced apart from the first switching element in a first direction and connected in parallel with the first switching element; a gate wiring disposed between the first switching element and the second switching element in the first direction; a first gate connection member that connects the first gate electrode and the gate wiring; a second gate connection member that connects the second gate electrode and the gate wiring; Including, The gate wiring is a first wiring portion extending in a second direction intersecting the first direction in a plan view seen from a thickness direction of the first switching element; a second wiring portion that is disposed closer to the second switching element in the first direction than the first wiring portion and extends in the second direction in the plan view; a connecting portion that connects the first wiring portion and the second wiring portion; Including, the first gate connection member is connected to the first wiring portion at a position spaced apart from the coupling portion in the second direction, The second gate connection member is connected to the second wiring portion at a position spaced apart from the coupling portion in the second direction. Semiconductor device.

2. the first gate connection member is connected to a tip end portion of the first wiring portion that is spaced apart from the coupling portion in the second direction, The second gate connection member is connected to a tip end of the second wiring portion that is spaced apart from the coupling portion in the second direction. The semiconductor device according to claim 1 .

3. Both the length of the first wiring portion in the second direction and the length of the second wiring portion in the second direction are longer than the distance between the first wiring portion and the second wiring portion in the first direction. The semiconductor device according to claim 1 .

4. a length of the first wiring portion in the second direction is longer than a length of the first switching element in the second direction; The length of the second wiring portion in the second direction is longer than the length of the second switching element in the second direction. The semiconductor device according to claim 1 .

5. The sum of the length of the first wiring portion in the second direction, the length of the first gate connecting member in the plan view, the length of the second wiring portion in the second direction, and the length of the second gate connecting member in the plan view is greater than a first inter-gate distance which is a distance between the first gate electrode and the second gate electrode in the plan view. The semiconductor device according to claim 1 .

6. the first gate electrode is disposed closer to a tip end portion of the first wiring portion that is spaced apart from the coupling portion in the second direction than a center of the first wiring portion in the second direction, The second gate electrode is disposed closer to a tip end portion of the second wiring portion that is spaced apart from the coupling portion in the second direction than to a center of the second wiring portion in the second direction. The semiconductor device according to claim 1 .

7. The length of the first wiring portion in the second direction is equal to the length of the second wiring portion in the second direction. The semiconductor device according to claim 1 .

8. a gate terminal electrically connected to the connection portion; Both the first wiring portion and the second wiring portion extend in the second direction from the connecting portion. The semiconductor device according to claim 7 .

9. a third switching element including a third gate electrode, the third switching element being disposed at a position spaced apart from the first switching element in the second direction, closer to the first switching element with respect to the gate wiring in the first direction, and connected in parallel with the first switching element and the second switching element; a fourth switching element including a fourth gate electrode, the fourth switching element being disposed at a position spaced apart from the second switching element in the second direction and closer to the second switching element with respect to the gate wiring in the first direction, and connected in parallel with the first switching element, the second switching element, and the third switching element; a third gate connection member that connects the third gate electrode and the gate wiring; a fourth gate connection member that connects the fourth gate electrode and the gate wiring; Including, The gate wiring is a third wiring portion that is located at a position separated from the first wiring portion in the second direction and extends in the second direction; a fourth wiring portion that is located at a position separated from the second wiring portion in the second direction and extends in the second direction; Including, the coupling portion is disposed between the first wiring portion and the third wiring portion in the second direction and between the second wiring portion and the fourth wiring portion in the second direction, and connects the first wiring portion, the second wiring portion, the third wiring portion, and the fourth wiring portion; the third gate connection member is connected to the third wiring portion at a position spaced apart from the coupling portion in the second direction, The fourth gate connection member is connected to the fourth wiring portion at a position spaced apart from the coupling portion in the second direction. The semiconductor device according to claim 1 .

10. the third gate connection member is connected to a tip end portion of the third wiring portion that is spaced apart from the coupling portion in the second direction, The fourth gate connection member is connected to a tip end portion of the fourth wiring portion that is spaced apart from the coupling portion in the second direction. The semiconductor device according to claim 9 .

11. The length of the third wiring portion in the second direction and the length of the fourth wiring portion in the second direction are both longer than the distance between the third wiring portion and the fourth wiring portion in the first direction. The semiconductor device according to claim 9 .

12. a length of the third wiring portion in the second direction is longer than a length of the third switching element in the second direction; The length of the fourth wiring portion in the second direction is longer than the length of the fourth switching element in the second direction. The semiconductor device according to claim 9 .

13. the third gate electrode is disposed closer to a tip end portion of the third wiring portion that is spaced apart from the coupling portion in the second direction than a center of the third wiring portion in the second direction, The fourth gate electrode is disposed closer to a tip end portion of the fourth wiring portion that is spaced apart from the coupling portion in the second direction than to a center of the fourth wiring portion in the second direction. The semiconductor device according to claim 9 .

14. The sum of the length of the third wiring portion in the second direction, the length of the third gate connection member in the plan view, the length of the fourth wiring portion in the second direction, and the length of the fourth gate connection member in the plan view is greater than a second inter-gate distance which is a distance between the third gate electrode and the fourth gate electrode in the plan view. The semiconductor device according to claim 9 .

15. The second inter-gate distance is equal to the first inter-gate distance, which is the distance between the first gate electrode and the second gate electrode in the plan view. The semiconductor device according to claim 14.

16. a gate terminal electrically connected to the connection portion; The length of the third wiring portion in the second direction is equal to the length of the fourth wiring portion in the second direction. The semiconductor device according to claim 9 .

17. a gate terminal electrically connected to the connection portion; a length of the third wiring portion in the second direction is equal to a length of the first wiring portion in the second direction; The length of the fourth wiring portion in the second direction is equal to the length of the second wiring portion in the second direction. The semiconductor device according to any one of claims 9 to 16.

18. a third switching element including a third gate electrode, the third switching element being disposed at a position spaced apart from the first switching element in the second direction, closer to the first switching element with respect to the gate wiring in the first direction, and connected in parallel with the first switching element and the second switching element; a fourth switching element including a fourth gate electrode, the fourth switching element being disposed at a position spaced apart from the second switching element in the second direction and closer to the second switching element with respect to the gate wiring in the first direction, and connected in parallel with the first switching element, the second switching element, and the third switching element; a third gate connection member that connects the third gate electrode and the gate wiring; a fourth gate connection member that connects the fourth gate electrode and the gate wiring; Including, The gate wiring is a third wiring portion that is located at the same position as the first wiring portion in the second direction and is spaced apart from the first wiring portion in the first direction, and that extends in the second direction; a fourth wiring portion that is located at the same position as the second wiring portion in the second direction and at a position separated from the second wiring portion in the first direction, and that extends in the second direction; Including, the coupling portion connects the first wiring portion, the second wiring portion, the third wiring portion, and the fourth wiring portion, the third gate connection member is connected to the third wiring portion at a position spaced apart from the coupling portion in the second direction, The fourth gate connection member is connected to the fourth wiring portion at a position spaced apart from the coupling portion in the second direction. The semiconductor device according to any one of claims 1 to 8.

19. the third wiring portion and the fourth wiring portion are disposed between the first wiring portion and the second wiring portion in the first direction, The lengths of both the third wiring portion and the fourth wiring portion in the second direction are longer than the lengths of both the first wiring portion and the second wiring portion in the second direction.

19. The semiconductor device according to claim 18.

20. a third switching element including a third gate electrode, the third switching element being disposed at a position spaced apart from the first switching element in the second direction, closer to the first switching element with respect to the gate wiring in the first direction, and connected in parallel with the first switching element and the second switching element; a fourth switching element including a fourth gate electrode, the fourth switching element being disposed at a position spaced apart from the second switching element in the second direction and closer to the second switching element with respect to the gate wiring in the first direction, and connected in parallel with the first switching element, the second switching element, and the third switching element; a third gate connection member that connects the third gate electrode and the gate wiring; a fourth gate connection member that connects the fourth gate electrode and the gate wiring; Including, the gate wiring includes a third wiring portion and a fourth wiring portion connected to the connecting portion, the third wiring portion includes a first gate connection portion that is arranged on an opposite side of the first wiring portion with respect to both the first switching element and the third switching element in the second direction, the fourth wiring portion includes a second gate connection portion that is arranged on an opposite side of the second wiring portion with respect to both the second switching element and the fourth switching element in the second direction, the third gate connection member is connected to the first gate connection portion, The fourth gate connection member is connected to the second gate connection portion. The semiconductor device according to any one of claims 1 to 8.

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