Light-emitting device

Abstract

To provide an active matrix type display device with a simple circuit structure, in which threshold correction is possible.SOLUTION: In a circuit illustrated in Fig.1, pulses are input to a first gate signal line 101 and a second gate signal line 102 in accordance with a timing chart in Fig.3, so that transistors in the circuit are turned on and off. As a result, a potential difference between a third node N3 and a second node N2 is determined only by a potential VData of a data line 103 and a potential V2 of a second wire 105 without depending on a threshold of a fourth transistor 112, therefore, intended current can be supplied to a display element 107.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to an active matrix display device. In particular, a display device having diode characteristics The present invention relates to an active matrix display device using a display element having diode characteristics. The elements include, for example, organic EL (electroluminescence) diodes and light-emitting diodes. These include, but are not limited to, diode characteristics or It exhibits characteristics similar to those of a diode, and accordingly, the amount of light emitted, transmittance, reflectance, color tone, and saturation The term "display element" is used hereinafter to refer to an element whose optical characteristics change as a result of changes such as the above. [Background technology]

[0002] A typical example of an electro-optical element having diode characteristics is an organic EL element. EL elements are formed in a matrix on a substrate, and each is controlled by a transistor to display an image. Active matrix organic EL display devices that display the above are known.

[0003] The transistors used in active matrix organic EL displays have a limited temperature range. Because of the need to form large areas within the range, amorphous silicon, polysilicon, and oxide are used for the semiconductor layer. Compound semiconductors and the like are used (see, for example, Patent Documents 1 to 3).

[0004] Transistors using such semiconductor materials generally have large variations in threshold voltage. In an EL display device, the degree of light emission is controlled by the current value flowing through the organic EL element, and gradation is obtained. In an active matrix organic EL display device, the current flowing through the organic EL element is controlled by a The current is controlled by a transistor, but the current value also depends on the threshold value of the transistor. If the threshold value of the display varies, the current flowing through the organic EL element will also vary, resulting in an uneven display. become.

[0005] In order to prevent display defects caused by such variations in threshold voltage, There is known a technique for correcting the threshold value using the above method (see Patent Documents 2 and 3). Patent Document 2 and Patent Document 3 describe only N-channel transistors and only P-channel transistors. Only N-channel transistors or a combination of N-channel and P-channel transistors , an example of configuring a threshold correction circuit is shown. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] U.S. Patent No. 7,674,650 [Patent Document 2] U.S. Patent No. 6,229,506 [Patent Document 3] U.S. Patent No. 7,429,985 Summary of the Invention [Problem to be solved by the invention]

[0007] By the way, depending on the semiconductor materials available, practical P-channel transistors can be obtained. On the other hand, there are some that do not produce N-channel transistors. Due to the manufacturing method and structural issues of the display element, the transistor is connected to the positive electrode of the display element. Conversely, it is sometimes required that the transistor be connected to the negative electrode of the display element. This sometimes happens.

[0008] For example, only N-channel transistors can be used, and the transistors are If connection to the positive electrode is required, the method described in Patent Document 2 can be adopted. In such a case, for example, a circuit such as that shown in FIG. 39 of Patent Document 3 may be used. It was necessary to use it.

[0009] The circuit disclosed in Patent Document 3 is shown in FIG. 2. FIG. 2 shows one dot (a pixel constituting a display device). the smallest unit of a pixel, usually consisting of multiple primary color dots) The first gate signal line 201, the second gate signal line 202, the third gate signal line 203, A fourth gate signal line 204, a fifth gate signal line 205, a data line 206, a first wiring 207, In addition to the nine wirings, namely the second wiring 208 and the third wiring 209 (which are formed on the element), The light emitting element 210, the capacitor 211, the first transistor 212, the second transistor 213, 13, the third transistor 214, the fourth transistor 215, the fifth transistor 216, A dotted line using seven transistors: a sixth transistor 217, a seventh transistor 218, and a It is.

[0010] Needless to say, an increase in the number of wirings and elements is undesirable because it reduces the manufacturing yield. An object of one embodiment of the present invention is to propose a simpler circuit configuration. An object of one embodiment of the present invention is to propose a method for driving the above circuit.

[0011] The description of these problems does not preclude the existence of other problems. It is not necessary for an embodiment to solve all of these problems. Problems other than these may be solved by the description. The above is self-evident from the description, drawings, claims, etc. From the above descriptions, it is possible to extract other issues. [Means for solving the problem]

[0012] The following describes a configuration that can solve the above problems. In this specification, a transistor is defined as a gate, a drain, and a source. The element has at least three terminals, including a drain (drain terminal) and a gate. , drain region or drain electrode) and source (source terminal, source region or source electrode) The electrode has a channel region between the two electrodes, and current flows through the drain, the channel region, and the source. It is possible to stream

[0013] Here, the source and drain vary depending on the structure or operating conditions of the transistor. Therefore, it is difficult to determine which is the source or the drain. The part that functions as a source and the part that functions as a drain are not called source or drain. One of the source and the drain is referred to as a first electrode, and the other of the source and the drain is referred to as a second electrode. It may be written as "pole."

[0014] In addition, for two-terminal elements such as capacitors and diodes, one electrode is called the first electrode. In this case, in a capacitor or diode, Even if there is a distinction between positive and negative electrodes, it does not indicate which is the first electrode. However, if it is necessary to specify the positive and negative poles due to the nature of the circuit, they will be stated separately. This sometimes happens.

[0015] In this specification, terms such as "first," "second," and "third" refer to various elements, members, regions, It is used to describe a layer or area separately from others. Thus, the first, second, third, etc. Any term does not limit the number of elements, members, regions, layers, areas, etc. For example, "first" can be replaced with "second" or "third", etc.

[0016] In this specification, when it is explicitly stated that X and Y are connected, X When X and Y are electrically connected, when X and Y are functionally connected, and when X and Y are This includes the case where X and Y are directly connected. For example, a device, an element, a circuit, a wiring, an electrode, a terminal, a conductive film, a layer, etc. Therefore, the present invention is not limited to predetermined connection relationships, for example, connection relationships shown in drawings or text, and may be applied to any connection relationship shown in drawings or text. This also includes connections other than those shown in the text.

[0017] An example of an electrical connection between X and Y is The elements to be considered (e.g., switches, transistors, capacitance elements, inductors, resistance elements, One or more electrodes (e.g., diodes) can be connected between X and Y.

[0018] When explicitly stating that X and Y are electrically connected, it means that X and Y are electrically When X and Y are directly connected (i.e., when another element or circuit is placed between X and Y), X and Y are functionally connected (i.e., there is no other connection between X and Y) and When X and Y are connected functionally via a circuit) and when X and Y are connected directly ( In other words, X and Y are connected without any other element or circuit between them. In other words, when it is explicitly stated that something is electrically connected, it should simply be is the same as if it were expressly stated only that it is

[0019] In this specification, active elements (such as transistors) and passive elements (such as capacitors) are referred to as For all terminals possessed by devices such as a power supply, a person skilled in the art can easily identify the terminals without specifying the destinations to which they are connected. In particular, when the terminals are connected to multiple destinations, If possible, there is no need to limit the connection of the terminal to a specific location. , and to specify the connection destinations of only some of the terminals of active elements, passive elements, etc. This may constitute an embodiment of the invention.

[0020] In this specification and the like, if at least the connection destination of a certain circuit is specified, it is understood by those skilled in the art. It may be possible for a person skilled in the art to identify an invention. A person skilled in the art may be able to identify an invention by at least specifying its function.

[0021] Therefore, even if the function of a circuit is not specified, if the connection destination is specified, it can be considered as an invention. The invention is disclosed as an embodiment and can be implemented as an embodiment of the invention. Regarding a certain circuit, even if the connection destination is not specified, specifying the function is considered as one aspect of the invention. and can constitute one aspect of the invention.

[0022] In this specification, etc., anything explicitly stated as singular shall be referred to as singular. However, it is not limited to this, and it is also possible to have multiple. However, if something is explicitly stated as plural, it is preferable to use plural. However, it is not limited to this and may be singular.

[0023] In this specification, pixels may be arranged (distributed) in a matrix. Here, the pixels being arranged (arranged) in a matrix means that they are arranged vertically or horizontally. When the pixels are arranged in a straight line or in a jagged line, Therefore, for example, full color display using three color elements (e.g., RGB) If you do this, when the dots of the three color elements are arranged in stripes, they will be arranged in deltas. This includes cases where the image is arranged in a mosaic pattern, a Bayer pattern, or a mosaic pattern. The size of the display area may differ for each dot of the color element. This makes it possible to reduce power consumption or extend the life of the display element.

[0024] One aspect of the present invention is a gate electrode including a first gate signal line, a second gate signal line, a data line, and a first transistor. and the second transistor, the third transistor, the fourth transistor, the fifth transistor, and the sixth transistor The display element includes a transistor, a capacitor, and a display element. The gate of the first transistor is connected to a first gate signal. a first electrode of the first transistor is connected to the data line; a second electrode of the first transistor is connected to the data line; The second electrode is connected to the second electrode of the fourth transistor and the first electrode of the fifth transistor. The gate of the second transistor is connected to the first gate signal line, and the first electrode of the second transistor is The second electrode of the third transistor is connected to the first electrode of the fourth transistor, and the second transistor The second electrode of the fourth transistor is connected to the gate of the fourth transistor and the first electrode of the capacitor. The gate of the fourth transistor is connected to the second gate signal line, and the second electrode of the fourth transistor is connected to the fifth gate signal line. The gate of the fifth transistor is connected to the second gate signal line, and the gate of the fifth transistor is connected to the first electrode of the fifth transistor. The second electrode of the transistor is connected to the first electrode of the display element, the second electrode of the capacitor, and the sixth transistor. The gate of the sixth transistor is connected to the first gate signal line. It is an active matrix display device having a pixel circuit.

[0025] The number of transistors is not limited to six, and may be seven or more. The number of capacitors and display elements is not limited to one each, and there may be two or more of either. However, there may be two or more of each. Those formed in parallel are considered to be one capacitor and one display element.

[0026] Here, the first to sixth transistors are all of the same conductivity type. If the first to sixth transistors are N-channel transistors, the first electrode of the display element is a positive electrode. The first electrode is a negative electrode, and the second electrode is a negative electrode. In this case, the first electrode of the display element is a negative electrode and the second electrode is a positive electrode.

[0027] If the first to sixth transistors are N-channel transistors, the third transistor The potential of the first electrode of the sixth transistor is equal to the potential of the second electrode of the sixth transistor and the potential of the second electrode of the display element. If the first to sixth transistors are P-channel transistors, the potential of the third transistor is higher than the potential of the first transistor. The potential of the first electrode of the transistor is the potential of the second electrode of the sixth transistor and the potential of the display element The potential of the second electrode is lower than that of the first electrode.

[0028] When the first to sixth transistors are N-channel transistors, the sixth transistor The potential of the second electrode of the display element may be lower than or equal to the potential of the negative electrode of the display element. The potential of the second electrode of the sixth transistor may be higher than the potential of the negative electrode of the display element. It is preferable that the potential difference between the second electrode of the display element and the negative electrode of the display element is smaller than the threshold value of the display element. It's nice.

[0029] Furthermore, the absolute value of the difference between the potential of the first electrode of the third transistor and the potential of the second electrode of the display element is , and is preferably five times or more the absolute value of the threshold voltage of the fourth transistor.

[0030] In addition, in one embodiment of the present invention, in the above circuit, a pulse input to the second gate signal line is and an active element having a period overlapping with a pulse input to the first gate signal line. This is a driving method for a matrix display device.

[0031] In addition, one embodiment of the present invention is a display element, a capacitor, a data line, and a first gate signal line. a plurality of transistors (transistors) whose gates are connected to the second gate signal line and the first gate signal line; A plurality of transistors (transistors A) whose gates are connected to the second gate signal line. A first electrode of one of the transistors A and B is connected to a second electrode of one of the transistors B. The electrodes are connected, and the gate is connected to the second electrode of one of the transistors A and the first electrode of the capacitor. Next, the other first electrode of transistor B and the other second electrode of transistor A are connected to the second electrode of transistor B. An active matrix having a circuit having a transistor (transistor C) connected to It is a type display device.

[0032] Here, the other first electrode of the transistor A may be connected to the data line. The other second electrodes of transistors A to B may be connected to the first electrodes of the display elements. All of the transistors C may be of the N-channel type. The potential may be higher than the potential of the second electrode of the display element.

[0033] In one embodiment of the present invention, in the above circuit, either the transistor A or the transistor B is The first period is when both transistors are on, and the second period is when transistor A is on and transistor B is off. a third period in which both transistor A and transistor B are off; and a fourth period during which transistor A is off and transistor B is on. This is a method for driving a Trick type display device.

[0034] Here, the first period is followed by the second period, the second period is followed by the third period, and the third period is followed by the fourth period. Preferably, the fourth period is followed by the first period. The setting may be made so that the [Effects of the Invention]

[0035] With the above configuration, the number of wirings and elements (transistors) required for a pixel (or dot) is For example, compared to the example in Figure 2, the number of gate signal lines has been reduced from three to two. Since pulses must be input to the gate signal lines, a drive circuit for this is also required. However, if the number of gate signal lines is reduced, the drive circuit for it is also unnecessary, and the power consumption is reduced accordingly. This reduces power consumption and also reduces the number of wirings, which is advantageous for increasing the degree of integration.

[0036] In particular, wiring other than data lines that require potential fluctuation (i.e., wiring connected to the gate of a transistor) The number of wirings (connecting to the wiring) is five in FIG. 2, but can be reduced to two in the present invention. Fluctuations lead to increased power consumption, so reducing the wiring that requires potential fluctuations can reduce power consumption. It can be reduced.

[0037] Even with this simplified configuration, the threshold voltage of the transistor is the same as in the conventional example. In addition, it is possible to correct variations in the display characteristics that deteriorate over time as the display is used. In elements (e.g., organic EL elements and light-emitting diodes), the deterioration can be compensated for. can. [Brief explanation of the drawings]

[0038] [Figure 1] 1A and 1B illustrate examples of circuits in a display device of one embodiment of the present invention. [Figure 2] FIG. 1 is a diagram illustrating an example of a circuit of a conventional display device. [Figure 3] 1A to 1C illustrate an example of a method for driving a display device according to one embodiment of the present invention. [Figure 4] 1A to 1C illustrate an example of a method for driving a display device according to one embodiment of the present invention. [Figure 5] 1A and 1B are top views illustrating examples of display devices according to embodiments of the present invention. [Figure 6] 1A to 1C are cross-sectional process diagrams illustrating an example of a manufacturing process of a display device according to one embodiment of the present invention. [Figure 7] 1A to 1C are cross-sectional process diagrams illustrating an example of a manufacturing process of a display device according to one embodiment of the present invention. [Figure 8] 1A to 1C are diagrams illustrating electronic devices using display devices. DETAILED DESCRIPTION OF THE INVENTION

[0039] Hereinafter, embodiments will be described with reference to the drawings. It is possible to carry out the invention in various forms and in various ways without departing from the spirit and scope of the invention. It will be readily apparent to those skilled in the art that various modifications may be made to the design and details of the present invention. The present invention should not be construed as being limited to the following description of the embodiments.

[0040] In addition, in the drawings, the size, layer thickness, or area may be exaggerated for clarity. Therefore, it is not necessarily limited to that scale.

[0041] The diagrams are merely diagrams showing ideal examples, and are not limited to the shapes or values ​​shown in the diagrams. For example, variations in shape due to manufacturing technology, variations in shape due to errors, and noise Variations in signals, voltages, or currents due to timing differences, or variations in signals, voltages, Alternatively, it is possible to include variations in current.

[0042] Furthermore, when technical terms are used to describe a particular embodiment or example, However, one aspect of the invention should not be interpreted as being limited by technical terms. .

[0043] In addition, terms not defined in this specification (including scientific and technical terms such as technical terms or academic terms) The terms "common" and "commonly used" can be used in the same sense as those commonly understood by a person skilled in the art. The words defined in dictionaries, etc. shall be interpreted in a way that is consistent with the background of the relevant technology. It is preferable that this be done.

[0044] Note that the content (or even a part of the content) described in one embodiment may be used in conjunction with that embodiment. Other content (or even part of content) described in the above, and / or one or more other implementations The content (or part of the content) described in the form of You can do things like:

[0045] When referring to items made of the same material or formed at the same time, the same symbols are used. However, when it is necessary to distinguish between them, the symbols "_1" and "_ For example, if multiple first layer wirings 303 are made of the same material, If they are configured, they shall be individually labeled "303_1", "303_2", etc. When the first layer wiring is referred to collectively in the specification, it is referred to as "first layer wiring 303." However, when one of them needs to be distinguished from the others, it is called "first layer wiring 303_1." It is sometimes written as u.

[0046] (Embodiment 1) FIG. 1A illustrates an example of a circuit of a display device of this embodiment mode. The first gate signal line 101 and the second gate signal line 102 are used as one dot of the display device. The wiring 102, the data wiring 103, the first wiring 104, the second wiring 105, and the third wiring 106 are The potentials of the first wiring 104, the second wiring 105, and the third wiring 106 are respectively It is preferable that the second wiring 105 and the third wiring 106 are kept constant. The potential may be designed and set to be

[0047] Also, a display element 107, a capacitor 108, a first transistor 109, and a second transistor 110, a third transistor 111, a fourth transistor 112, and a fifth transistor 113 and a sixth transistor 114.

[0048] The gate of the first transistor 109 is connected to the first gate signal line 101. The first electrode of the first transistor 109 is connected to the data line 103, and the second electrode of the first transistor 109 is connected to the data line 103. 4 connected to the second electrode of the transistor 112 and the first electrode of the fifth transistor 113.

[0049] The gate of the second transistor 110 is connected to the first gate signal line 101. The first electrode of the transistor 110 is connected to the second electrode of the third transistor 111 and the second electrode of the fourth transistor 112. 2, and the second electrode of the second transistor 110 is connected to the first electrode of the fourth transistor 112. The gate is connected to the first electrode of the capacitor 108 .

[0050] The gate of the third transistor 111 is connected to the second gate signal line 102, and the gate of the fourth transistor The second electrode of the fifth transistor 112 is connected to the first electrode of the fifth transistor 113. The gate of the fifth transistor 113 is connected to the second gate signal line 102, and the second electrode of the fifth transistor 114 is connected to the front The first electrode of the display element 107, the second electrode of the capacitor 108, and the sixth transistor 114 The gate of the sixth transistor 114 is connected to the first gate signal line 101. do.

[0051] Furthermore, the first electrode of the third transistor 111 is connected to the first wiring 104, and the sixth transistor The second electrode of the capacitor 114 is connected to the second wiring 105, and the second electrode of the display element 107 is connected to the third wiring 106. The first wiring 104, the second wiring 105, and the third wiring 106 are kept at a constant potential. It is sufficient to set it as follows.

[0052] The second electrode of the first transistor 109, the second electrode of the fourth transistor 112, and the fifth transistor The intersection of the first electrodes of the fifth transistor 113 is referred to as a first node N1, and the intersection of the second electrodes of the fifth transistor 113 is referred to as a first node N2. The intersection of the first electrode of the sixth transistor 114 and the first electrode of the display element 107 is called a second node. N2, the second electrode of the second transistor 110 and the gate of the fourth transistor 112, and the capacitor The intersection of the first electrodes of the capacitor 108 is called a third node N3.

[0053] Here, all the transistors are N-channel type. The first electrode is a positive electrode, and the second electrode is a negative electrode. The potential difference is required to be higher than the potential of the third wiring 105 and the third wiring 106. However, the larger the potential difference, the greater the variation in the threshold voltage of the transistors, for reasons that will be explained later. It is possible to compensate for deterioration of the display element.

[0054] The potential difference is determined by the display performance of the display element 107. If the threshold value of the capacitor 112 is +1V, the potential difference between the first wiring 104 and the third wiring 106 is The potential of the first wiring 104 is set to V1 or more, preferably 10 V or more. The potential of the second wiring 105 is V2, and the potential of the third wiring 106 is V3. For example, the potential V1 can be set to +10V, potential V2 to 0V, and potential V3 to 0V.

[0055] To drive the circuit shown in FIG. 1A, video data is input to the data line 103, and 3 is input to the first gate signal line 101 and the second gate signal line 102. Here, V H is the potential at which the transistor turns on, V L is the power that is turned off This will be ranked 1st.

[0056] As shown in FIG. 3, one frame is a period in which the potential of the first gate signal line 101 and the potential of the second gate signal line 102 are changed. The potential of wire 102 is V H and a period a during which the potential of the first gate signal line 101 is V H The second The potential of the gate signal line 102 is V L and the potential of the first gate signal line 101 and the potential of the second gate signal line 102 are The potential of the gate signal lines 102 is V L and the potential of the first gate signal line 101 is V L The potential of the second gate signal line 102 is V H It consists of four periods, period d, where

[0057] Note that when the potential of the first gate signal line 101 is V H and the period τ1 of the second gate signal line 102. The potential is V L The period τ2 may be different, but if it is designed to be the same, the circuit This is preferable because it simplifies the calculation. On the other hand, the same pulse can be inverted and output to the first gate signal line 101. is outputted to the second gate signal line 102 by passing through a delay circuit.

[0058] The operation state of the transistor in each period will be described below with reference to FIG. Figure 4(B) shows the period a, Figure 4(B) shows the period b, Figure 4(C) shows the period c, and Figure 4(D) shows the period The transistor symbol indicates the state of the transistor in the on state. A circle is overlapped, and an x ​​is overlapped for a transistor in an off state.

[0059] During the period a, all the transistors connected to the first gate signal line 101 and the second gate signal line 102 transistors (first transistor 109, second transistor 110, third transistor 111, The fifth transistor 113 and the sixth transistor 114 are turned on. The potential of the gate and the potential of the first electrode of the transistor 112 are approximately equal to V1, and the potential of the second electrode (the The potential of the node N1) is V Data is almost equal to the former At this time, the first electrode of the capacitor (third node N3 ) is approximately equal to V1, and the potential of the second electrode (second node N2) of the capacitor is V2. Almost equal.

[0060] As described above, a potential is applied between the first electrode and the second electrode of the fourth transistor 112 in the ON state. A potential difference occurs between the first electrode and the second electrode of the fifth transistor 113, which is also in the on state. As a result, the fourth transistor 112 and the fifth transistor 113 consume power. Therefore, it is preferable that the period a is as short as possible, and is set to 100 ns to 500 ns. It would be good to do so.

[0061] During the period b, the potential of the second gate signal line 102 is V L Therefore, the third traffic The fifth transistor 111 and the fifth transistor 113 are turned off. At the beginning of period b, the potential is the same as that of period a. The sixth transistor 110 and the sixth transistor 114 are on. Therefore, the potential of the first node N1 is , the potential of the data V Data In addition, the potential of the second node N2 becomes V2.

[0062] The fourth transistor 112 is on and the potential V Data is lower than the potential V1, A charge is transferred from the third node N3 to the first node N1 through the first electrode of the fourth transistor 112. As a result, the potential of the third node N3 decreases. The potential drop at the node N3 occurs when the potential at the third node N3 drops to (V Data +V th ) until That is, the potential difference between the first electrode and the second electrode of the capacitor 108 is (V Data +V th -V2).

[0063] During the period c, the potential of the first gate signal line 101 is also V L Therefore, the first traffic The second transistor 109, the second transistor 110, and the sixth transistor 114 are also turned off. The potentials of the first node N1, the second node N2, and the third node N3 are almost the same as those in period b. It doesn't change.

[0064] During the period d, the potential of the second gate signal line 102 is V H Therefore, the third traffic The fifth transistor 111 and the fifth transistor 113 are turned on. Since the potential of N2 is V2, the fifth transistor 113 is turned on. The potential of the second electrode of the transistor 112 also becomes V2. As a result, the potential of the first electrode of the fourth transistor 112 becomes V1.

[0065] At this time, the potential of the gate of the fourth transistor 112 is (V Data +V th ) and The first electrode has a higher potential than the second electrode. The potential difference between the two electrodes (V Data +V th -V2) is the potential difference between the first and second electrodes The current I flowing between the first and second electrodes is smaller than (V1-V2) and is in the saturated region. According to the drain current formula:

[0066] That is, the potential difference between the gate and source (in this case, the second electrode) minus the threshold voltage. In this case, the second electrode of the fourth transistor 112 corresponds to the source.

[0067] I∝{(V Data +V th -V2)-V th} 2 =(V Data -V2) 2 (Formula 1 )

[0068] As is clear from equation 1, the current I does not depend on the threshold value of the fourth transistor 112.

[0069] As the current flows and charge accumulates at the second node N2, the potential at the second node N2 rises. However, the increase in the potential of the second node N2 is reduced by the capacitive coupling via the capacitor 108 as follows: Since the potential of the third node N3 rises, the potential of the third node N3 and the potential of the second node N2 The difference between these two remains unchanged. That is, the current I remains constant regardless of the potential of the second node N2.

[0070] As the potential of the second node N2 increases, the display element 107 becomes more likely to pass a current. When the potential of the node N2 reaches a certain value, the current flowing through the display element 107 and the current I are balanced. That is, the potential of the second node N2 is constant. The display state (emission amount, transmittance, reflectance, color tone, saturation, etc.) changes depending on the As is clear from Equation 1, the data V Data This is determined by the potential of the This makes it possible to correct variations in the threshold voltage of the transistor.

[0071] As is clear from Equation 1, in order for the current I to be constant, the potential of the third node N3 must be When the potential of the third node N3 fluctuates, the current I For example, if the turn-off characteristics of the second transistor 110 are insufficient, During this period, the potential of the third node N3 rises.

[0072] As the potential of the third node N3 rises, the current I also increases. It can appear as pixel or dot defects, but can also be seen across the entire display. If it is excessive, it may cause display defects such as flickering. It is preferable that the off characteristics of MOSFET are sufficient (i.e., the off current is sufficiently low).

[0073] (Embodiment 2) In this embodiment mode, one mode of a display device of the present invention will be described with reference to FIGS. In this embodiment, a display device using organic EL elements as light-emitting elements will be described. A light-emitting layer is formed on the active matrix circuit, and light is emitted above the active matrix circuit. A top-emission display device that displays by irradiating light will now be described.

[0074] 5A to 5C show wiring and contact holes used to fabricate one dot of a display device. The layout of the wiring, semiconductor layers, etc. is shown. Note that various insulating films, etc. are not shown. The dotted rectangle represents one dot.

[0075] FIG. 5A shows the first layer wiring 303, the semiconductor layer 305, and the wiring from the first layer wiring to the upper wiring. The position of the first contact hole 306 is shown. Of these, the first layer wiring 303_1 is shown in FIG. ) is a wiring corresponding to the second wiring 105. In addition, the first layer wiring 303_2 is a wiring corresponding to the second wiring 105 of FIG. The first layer wiring 303_4 becomes a part of the first gate signal line 101. This becomes a part of the gate signal line 102. Also, a part of the first layer wiring 303_3 is The other first layer wiring 303 becomes a part of the first electrode of the capacitor 108. These serve as the gates of the first transistor 109 to the sixth transistor 114 .

[0076] In addition, the semiconductor layer 305_1, the semiconductor layer 305_2, the semiconductor layer 305_3, and the semiconductor layer 305 The semiconductor layer 305_4, the semiconductor layer 305_5, and the semiconductor layer 305_6 are the first transistors in FIG. transistor 109, second transistor 110, third transistor 111, fourth transistor 1 12, the fifth transistor 113, and the sixth transistor 114.

[0077] FIG. 5B shows the second layer wiring 307 and the second contact hole 31 connected to the wiring above it. 0 position. Of these, the second layer wiring 307_1 becomes the data line 103 in FIG. 1(A). Also, a part of the second layer wiring 307_6 is a part of the second electrode of the capacitor 108 in FIG. The other second layer wirings 307 are connected to the first transistor 109 to the sixth transistor 106 in FIG. This serves as the first electrode or the second electrode of the transistor 114 .

[0078] FIG. 5C shows a third contact hole 311 connected to the first electrode of the display element. 1(A) and 14. Of these, the third layer wiring 311_1 corresponds to the first gate signal line 1 in FIG. 01, the third layer wiring 311_4 becomes part of the second gate signal line 102, and the third layer wiring 311_5 becomes part of the second gate signal line 102. The layer wiring 311_5 becomes a part of the first wiring 104.

[0079] Wiring layers, semiconductor layers, contact holes, etc., having the shapes shown in FIGS. 5(A) to 5(C) are stacked. By doing so, a circuit for use in a display device can be fabricated. A method for manufacturing the display device will be described below. FIGS. 6 and 7 are cross-sectional views of the manufacturing process. corresponds to the cross section of the dashed line AB in FIGS. 5(A) to 5(C).

[0080] A base insulating layer 302 is formed on a first substrate 301 having an insulating surface. After forming the resist pattern, a first photolithography process is performed to form a resist mask and etch the resist pattern. Unnecessary portions are removed by etching to form the first layer wiring 303. As shown in FIG. When the first layer wiring 303 is etched so that the end portion thereof has a tapered shape, the laminated film This is preferable because it improves the coating property.

[0081] There is no particular limitation on the substrate that can be used for the first substrate 301, but at least it should be The first substrate 301 is required to have heat resistance sufficient to withstand heat treatment. However, the present invention is not limited to this and various substrates such as transparent, opaque, insulating and conductive substrates can be used. In particular, in this embodiment, the light used for display is emitted from the first substrate. The substrate does not need to be transparent because the light is irradiated from the opposite direction. Metallic materials may also be used.

[0082] When a glass substrate is used as the first substrate, if the temperature of the subsequent heat treatment is high, the strain point The glass substrate is preferably made of a material having a temperature of 730°C or higher. Glass materials such as vitreous glass, aluminoborosilicate glass, and barium borosilicate glass are used. In addition, by containing more barium oxide (BaO) than boric acid, Therefore, glass substrates containing more BaO than B2O3 are used. It is preferable to use

[0083] Instead of the glass substrate, an insulating substrate such as a ceramic substrate, a quartz substrate, or a sapphire substrate may be used. Alternatively, a substrate made of an insulating material may be used. Alternatively, a substrate made of crystallized glass or the like may be used.

[0084] The insulating base layer 302 has a function of preventing the diffusion of impurity elements from the first substrate 301. In addition, if the first substrate 301 is conductive, it also functions to maintain the insulation of the circuit. The insulating layer 302 is selected from a silicon nitride film, a silicon oxide film, a silicon nitride oxide film, and a silicon oxynitride film. The insulating film may be formed by a laminate structure of one or more films.

[0085] The material of the first layer wiring 303 is Mo, Ti, Cr, Ta, W, Al, Cu, Pt, Pd, etc. Forming a single layer or multilayer using metal materials or alloy materials whose main components are metal materials For example, by stacking indium nitride or molybdenum oxide, which have high work functions, on top of Ti, The structure can be as follows.

[0086] Next, a gate insulator 304 is formed on the first layer wiring 303. The gate insulator 304 is A silicon oxide layer, a silicon nitride layer, a silicon oxynitride layer, etc. are formed by using a plasma CVD method or a sputtering method. A silicon nitride oxide layer, a silicon nitride oxide layer, or an aluminum oxide layer can be formed as a single layer or a stacked layer. For example, SiH4 and N2O are used as film-forming gases and the film is oxidized by plasma CVD. A silicon nitride film may be formed.

[0087] Next, a semiconductor layer is formed and an island-shaped semiconductor layer 305 is formed by a second photolithography process. The semiconductor layer 305 may be formed using a silicon semiconductor or an oxide semiconductor. Silicon semiconductors include single crystal silicon and polycrystalline silicon, and As the compound semiconductor, an In-Ga-Zn oxide or the like can be used appropriately.

[0088] Here, for example, In-Ga-Zn oxide is a material containing In, Ga, and Zn as its main components. The ratio of In, Ga, and Zn is not important. Metal elements other than a and Zn may be included.

[0089] For example, the semiconductor layer 305 is made of an oxide semiconductor such as an In-Ga-Zn oxide. By using a semiconductor layer with a low off-state current, the leakage current of the transistor can be reduced, and in particular, It is preferable to maintain the potential of the third node N3 of 1(A) constant in order to improve the display quality.

[0090] The oxide semiconductor is not limited to In-Ga-Zn oxides, but may be at least indium ( In particular, it is preferable to use a material containing In and Zn. In addition, in order to reduce variations in the electrical characteristics of transistors using the oxide semiconductor, It is preferable to have gallium (Ga) in addition to these as a stabilizer. It is also preferable to have tin (Sn) as a stabilizer. It is preferable that hafnium (Hf) is used as the stabilizer. It is preferable to have aluminum (Al).

[0091] Other stabilizers include lanthanides such as lanthanum (La) and cerium ( Ce), praseodymium (Pr), neodymium (Nd), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), hol Mium (Ho), Erbium (Er), Thulium (Tm), Ytterbium (Yb), Ru It may contain one or more of tetraethion (Te) and tetraethion (Tb).

[0092] For example, other oxide semiconductors include indium oxide, tin oxide, zinc oxide, and binary gold oxide. In-Zn oxides, Sn-Ga-Zn oxides, and Al-Ga-Zn oxides are oxides of metals. Oxides, Sn-Al-Zn oxides, Sn-Zn oxides, Al-Zn oxides, Zn- Mg-based oxides, Sn-Mg-based oxides, In-Mg-based oxides, In-Ga-based oxides, ternary oxides Metal oxides such as In-Al-Zn oxides, In-Sn-Zn oxides, and In-Hf -Zn-based oxide, In-La-Zn-based oxide, In-Ce-Zn-based oxide, In-Pr- Zn-based oxides, In-Nd-Zn-based oxides, In-Sm-Zn-based oxides, In-Sm-Z n-based oxides, In-Eu-Zn-based oxides, In-Gd-Zn-based oxides, In-Tb-Zn oxides, In-Dy-Zn oxides, In-Ho-Zn oxides, In-Er-Zn oxides Oxides, In-Tm-Zn oxides, In-Yb-Zn oxides, In-Lu-Zn ​​oxides oxides of quaternary metals, such as In-Sn-Ga-Zn oxides and In-Hf-Ga- Zn-based oxides, In-Al-Ga-Zn-based oxides, In-Sn-Al-Zn-based oxides, I n-Sn-Hf-Zn oxide and In-Hf-Al-Zn oxide can be used .

[0093] For example, In:Ga:Zn=1:1:1 (=1 / 3:1 / 3:1 / 3) or In:G In-Ga-Zn oxide with an atomic ratio of a:Zn=2:2:1 (=2 / 5:2 / 5:1 / 5) Alternatively, In:Sn:Zn=1: 1:1(=1 / 3:1 / 3:1 / 3), In:Sn:Zn=2:1:3(=1 / 3:1 / 6:1 / 2) or In:Sn:Zn=2:1:5(=1 / 4:1 / 8:5 / 8) It is preferable to use an In-Sn-Zn oxide with a molecular ratio or an oxide with a composition close to that.

[0094] However, it is not limited to these, and the required semiconductor characteristics (mobility, threshold, variation, etc.) In addition, in order to obtain the required semiconductor characteristics, Carrier concentration, impurity concentration, defect density, atomic ratio of metal elements to oxygen, interatomic bond length, density It is preferable to make the following appropriate.

[0095] For example, high mobility can be obtained relatively easily with In-Sn-Zn oxides. Therefore, in In-Ga-Zn oxides, the mobility can be increased by increasing the defect density in the bulk. It is possible.

[0096] For example, when the atomic ratio of In, Ga, and Zn is In:Ga:Zn=a:b:c(a+b+ c=1), the atomic ratio of the oxide is In:Ga:Zn=A:B:C (A+B+C=1) The oxides are in the neighborhood of r if a, b, and c are (a―A) 2 +(b-B) 2 +(c-C) 2 ≦r 2 The value of r can be set to, for example, 0.05. The same applies to other oxides. is.

[0097] The oxide semiconductor may be single-crystal or non-single-crystal. In the latter case, it may be amorphous or polycrystalline. In addition, it may be a structure containing a crystalline portion in an amorphous state or a non-amorphous state. That's fine too.

[0098] Amorphous oxide semiconductors can be easily flattened, This can reduce interface scattering when fabricating a transistor, and can be achieved relatively easily and with relatively high efficiency. High mobility can be obtained.

[0099] In addition, in a crystalline oxide semiconductor, defects in the bulk can be further reduced, and the surface By improving the flatness of the oxide semiconductor, it is possible to obtain a mobility higher than that of an oxide semiconductor in an amorphous state. In order to improve the flatness of the surface, it is preferable to form an oxide semiconductor on a flat surface. Specifically, the average surface roughness (Ra) is 1 nm or less, preferably 0.3 nm or less, and more preferably It is preferable to form it on the surface of 0.1 nm or less.

[0100] After forming the semiconductor layer 305, a part of the gate insulator 304 is subjected to a third photolithography process. As a result, a first contact hole 306 is formed that reaches the first layer wiring. The method for forming the filter 306 may be selected appropriately from dry etching, wet etching, etc. The cross section up to this point is shown in Figure 6(A).

[0101] Next, a conductive film is formed over the gate insulator 304 and the semiconductor layer 305, and a fourth photolithography is performed. The second layer wiring 307 is formed by a photolithography process. For example, a metal film containing an element selected from Al, Cr, Cu, Ta, Ti, Mo, and W. or a metal nitride film containing the above-mentioned elements (titanium nitride film, molybdenum nitride film, nitride A tungsten oxide film or the like can be used.

[0102] In addition, Ti, Mo, W, etc. may be applied to either or both of the upper and lower sides of the metal film such as Al or Cu. High-melting-point metal films or their metal nitride films (titanium nitride film, molybdenum nitride film, titanium nitride film, Alternatively, a laminated structure of a fluorine film and a fluorine film may be used.

[0103] The second layer wiring 307 may be made of a conductive metal oxide. Examples include indium oxide, tin oxide, zinc oxide, In-Sn oxide (ITO, etc.), In- Zn-based oxide or these metal oxide materials containing silicon oxide can be used. This can be done.

[0104] Next, a first interlayer insulator 308 and a second layer wiring 307 are formed on the semiconductor layer 305 and the second layer wiring 307. The first interlayer insulator 309 is formed. The first interlayer insulator 308 may be a silicon oxide film or an oxynitride film. An inorganic insulating film such as a silicon film can be used as the second interlayer insulator 309. It is preferable to select an insulating film having a planarizing function in order to reduce the surface irregularities caused by the transistor. For example, inorganic materials such as SOG (spin-on glass), polyimide, acrylic, Organic materials such as benzocyclobutene can be used. The second interlayer insulator 309 may be formed by laminating a plurality of insulating films.

[0105] Next, the first interlayer insulator 308 and the second interlayer insulator 309 are formed by a fifth photolithography process. A second contact hole 310 is formed in the object 309, reaching the second layer wiring 307. The method for forming the contact hole 310 is selected appropriately from dry etching, wet etching, etc. The state up to this point is shown in Figure 6(B).

[0106] Next, a conductive film is formed on the second interlayer insulator, and the third layer is formed by a sixth photolithography process. The wiring 311 is formed. The conductive film used for the third layer wiring 311 is the same as that used for the second layer wiring 307. It can be selected from the materials used, but materials with particularly low resistivity are preferable, such as Cu or its alloys. It is recommended to use

[0107] Next, a third interlayer insulator 312 and a fourth interlayer insulator 313 are formed on the third layer wiring 311. The third interlayer insulator 312 and the fourth interlayer insulator 313 are formed between the first interlayer insulator 308 and the second interlayer insulator 309. It can be formed of a material that can be used for the insulator 309 .

[0108] Next, the third interlayer insulator 312 and the fourth interlayer insulator 313 are formed by a seventh photolithography process. A third contact hole 314 is formed in the object 313, reaching the third layer wiring 311. The method for forming the contact hole 314 is selected appropriately from dry etching, wet etching, etc. The state up to this point is shown in Figure 6(C).

[0109] Next, a conductive film is formed on the fourth interlayer insulator 313, and an eighth photolithography process is performed. The reflective electrode layer 315 is formed on the first electrode of the display element 107 shown in FIG. The reflective electrode layer 315 corresponds to the first electrode. It is preferable to use a material that efficiently reflects light emitted by the light emitting layer 317 formed on the substrate.

[0110] The reflective electrode layer 315 may have a laminated structure. For example, a gold layer may be formed on the side in contact with the light-emitting layer 317. A thin conductive film made of metal oxide or titanium is formed on one side, and a highly reflective metal film (aluminum) is formed on the other side. Aluminum, an alloy containing aluminum, or silver can be used. By using this structure, the light-emitting layer 317 and the metal film (aluminum, aluminum) with high reflectivity can be This can suppress the formation of an insulating film between the material and the electrode (such as an alloy containing silver or silver). It is suitable.

[0111] Next, the partition wall 316 is formed on the reflective electrode layer 315. The partition wall 316 is made of an organic insulating material. In particular, the reflective electrode layer 315 is formed using a photosensitive resin material. An opening is formed on the top, and the sidewall of the opening becomes an inclined surface formed with a continuous curvature. It is preferable to form it as follows.

[0112] Next, a reflective electrode layer 315 is formed on the partition wall 316, a light-emitting layer 317 is formed on the light-emitting layer 317, and a transparent electrode layer 318 is formed on the light-emitting layer 317. The light-emitting layer 317 may be composed of a single layer or a plurality of layers. In this embodiment, however, the light emitted by the light emitting layer 317 is It is preferable that the light is white and has peaks in the red, green, and blue wavelength regions.

[0113] In this embodiment, an organic EL material is used for the light emitting layer 317, so the light emitting layer 317 is a true It is preferable to form the light-emitting layer 317 by vacuum evaporation. Since it is difficult to pattern the film formed on the substrate by photolithography, The light-emitting layer 317 and the transparent electrode layer 318 are uniformly formed on the first substrate. 318 corresponds to the second electrode of the display element 107 in FIG.

[0114] Through the above steps, a transistor for controlling the driving of the light-emitting element and a light-emitting layer 317 are formed. The state up to this point is shown in Figure 7(A).

[0115] Next, a light-shielding film 320, a color filter 321, and an overcoat film 322 were formed. The method for manufacturing the second substrate 319 is as follows. The second substrate 319 must be transparent. However, other conditions are more lenient than those for the first substrate 301, and materials with poor heat resistance can also be used. .

[0116] First, an opaque film is formed on the second substrate 319, and a photolithography process is performed to form an opaque film. The light-shielding film 320 prevents color mixing and light leakage between pixels. The light-shielding film 320 may not be provided. The light-shielding film 320 may be made of titanium, quartz, or the like. Metal films with low reflectivity, such as ROM, or organic resin films impregnated with black pigments or black dyes, etc. can be used.

[0117] Next, a color filter 321 is formed on the second substrate 319 and the light-shielding film 320. The color filter 321 is a colored layer that transmits light in a specific wavelength band. For example, A red (R) color filter that transmits light in the long wavelength band, and a green (R) color filter that transmits light in the green wavelength band. (G) color filter, and blue (B) color filter that transmits light in the blue wavelength range. Each color filter can be formed by using known materials and by printing, inkjet printing, etc. The desired positions are then formed by a jet method, an etching method using photolithography technology, etc. Form.

[0118] Although the method using three colors of RGB has been described here, the present invention is not limited to this. It may be configured using four colors, GB and Y (yellow), or may be configured using five or more colors.

[0119] Next, an overcoat film 322 is formed on the light-shielding film 320 and the color filter 321. The overcoat film 322 is preferably made of an organic resin film such as acrylic or polyimide. The overcoat film 322 prevents impurities contained in the color filter 321 from being absorbed. It is possible to prevent the components from diffusing to the light-emitting layer 317 side. The insulating film 2 may have a laminated structure of an organic resin film and an inorganic insulating film. Silicon, silicon oxide, etc. can be used. It doesn't have to be done.

[0120] Through the above steps, the light-shielding film 320, the color filter 321, and the overcoat film 322 are formed. Then, the first substrate 301 and the second substrate 319 are formed. The two are aligned and bonded together to form a display device.

[0121] There is no particular limitation on the bonding of the first substrate 301 and the second substrate 319. The first substrate 301 and the second substrate 302 can be bonded to each other by using a light-transmitting adhesive or the like. A sealed space 323 is formed between the first and second electrodes 19. The space 323 is not particularly limited, and may be a light-transmitting space. It is sufficient that the temperature is stable and that outside air does not enter.

[0122] However, it is preferable that the space 323 be filled with a light-transmitting material whose refractive index is higher than that of air. When the refractive index is small, the oblique light emitted from the light emitting layer 317 enters the space 323. This causes further refraction, and in some cases light may escape from adjacent pixels. As the material 323, for example, a material having a high refractive index that allows the first substrate 301 and the second substrate 319 to be bonded together is used. A thick translucent adhesive can be used.

[0123] Inert gases such as nitrogen and argon can also be used. A desiccant or the like may be dispersed in the container. The state up to this point is shown in Figure 7(B).

[0124] The display device shown in FIG. 7B emits light from the light-emitting layer 317 toward the second substrate 319, i.e., The display device has a top emission structure. The white light emitted from the LED is separated into different colors by the color filter 321.

[0125] A top-emitting device that combines such a white light-emitting element with a color filter is The display device with a white + CF + TE structure (hereinafter referred to as white + CF + TE structure) and the display device with a color-coded method The resulting light-emitting element has a top-emission structure (hereinafter referred to as "color-separated + TE structure") for display devices. The separate coloring method involves applying RGB materials to each pixel using a vapor deposition method or similar. This is a method of painting in different colors.

[0126] First, for colorization, in the case of a white + CF + TE structure, a color filter is used to Therefore, a color filter is required. In this case, color filters are not required because each pixel is colored by deposition or other methods. However, in the white + CF + TE structure, a color filter is required, but In the +TE structure, a metal mask is required to paint different colors. It is possible to paint different colors using inkjet or other methods without using a mask, but There are still many technical challenges.

[0127] If a metal mask is used, the evaporation material will also be evaporated onto the metal mask. However, there are also issues such as poor material usage efficiency and high costs. If the light emitting element comes into contact with the substrate, it may be destroyed, or scratches or particles may be generated due to the contact. The yield will decrease.

[0128] Next, for pixel size, in the color-by-color + TE structure, it is necessary to color each pixel differently. Therefore, it is necessary to provide an area between pixels for color separation. This results in a significant reduction in the aperture ratio. In the case of the CF+TE structure, there is no need to provide an area between pixels for different colors, so one pixel The size of the pixel can be increased, and the aperture ratio can be improved accordingly.

[0129] Furthermore, when enlarging a display device, the manufacturing technology for the display device becomes an essential element. In the case of a separate + TE structure, a metal mask is required for separate painting, and a large-sized metal It is difficult because the mask technology and production facilities are not yet established. Even if the mask technology and production facilities are established, the evaporation material will be evaporated onto the metal mask. On the other hand, in the case of the white + CT + TE structure, This is advantageous because it does not require a mask and can be manufactured using conventional production equipment.

[0130] Furthermore, the manufacturing equipment for display devices is an important factor in the productivity of display devices. For example, When the light emitting element has a multi-layered structure, the device for manufacturing the display device is in-line or It is preferable to form a plurality of deposition sources on a substrate at once or successively as a multi-chamber. In the case of the color-by-color + TE structure, it is necessary to color each pixel differently, so the desired position To form the mask at the correct position, it is necessary to change the metal mask. Therefore, it is difficult to make the manufacturing equipment inline or multi-chamber. On the other hand, in the case of a white + CF + TE structure, there is no need to use a metal mask, so it can be inlined. Alternatively, it is easy to configure the manufacturing equipment to have multiple chambers.

[0131] (Embodiment 3) In this embodiment mode, the components of an electronic device manufactured using the display device described in the above embodiment mode will be described. An example will be described with reference to FIG.

[0132] An example of an electronic device to which the present invention can be applied is a television device (television or television set). (also called television receivers), computer monitors, digital cameras, digital video Cameras, digital photo frames, mobile phones, portable game consoles, personal digital assistants, audio players These include video game devices, gaming machines (pachinko machines, slot machines, etc.), and game cabinets. A specific example of an electronic device is shown in FIG.

[0133] FIG. 8A shows a table 400 having a display unit. The table 400 has a housing 4 The display portion 403 is incorporated in the display device 401. The image display device 403 can be used to display an image. In addition, the housing 401 is supported by four legs 402. The housing 401 has a power cord 405 for supplying power.

[0134] The display unit 403 has a touch input function, and the table 400 is displayed on the display unit 403. By touching the displayed display button 404 with a finger or the like, it is possible to operate the screen or input information. In addition, the screen of the display unit 403 can be vertically fixed to the floor by a hinge provided on the housing 401. It can also be set upright and used as a television set. If you install a large screen television, the free space will be narrow, but it is possible to install it on a table. If the display unit is built in, the space in the room can be used more effectively.

[0135] By using the display device having the spacers having the light-shielding property shown in the above embodiment, Since color bleeding and color shift are unlikely to occur in the display unit 403, This allows the display unit 403 to have higher display quality than conventional ones. The pair of substrates are held together by the spacer, making it extremely resistant to external forces such as shock and distortion. Since it is strong, it can be suitably used as the table shown in FIG. 8(A).

[0136] 8B shows a television device 410. The television device 410 has a housing A display portion 412 is incorporated in the display device 411. can be used for the display unit 412, and the display unit 412 can display images. It is possible. In this example, the housing 411 is supported by a stand 413. do.

[0137] The television device 410 can be operated using an operation switch provided on the housing 411 or a separate remote control. This can be done by the operation device 414. The operation keys 41 provided on the remote control operation device 414 6, the channel and volume can be operated, and the image displayed on the display unit 412 can be The image can be operated by the remote control 414. A display unit 415 for displaying information output from the

[0138] The television device 410 shown in FIG. 8(B) includes a receiver, a modem, etc. The television device 410 can receive general television broadcasts using a receiver, and further One-way communication by connecting to a wired or wireless communication network via a modem (sender to receiver) or bidirectional (between sender and receiver, or between receivers) It is also possible to carry out information communication.

[0139] By using the display device having the spacers having the light-shielding property shown in the above embodiment, Since color bleeding and color shift are unlikely to occur in the display device, the display device can be used as a display device for a television set. By using the display unit 412, it is possible to provide a television device with higher display quality than conventional devices. can.

[0140] FIG. 8C shows a personal computer 420, which includes a housing 421, a housing 422, a display unit 4, and a 23, keyboard 424, external connection port 425, pointing device 426, etc. The computer displays a display device manufactured using one embodiment of the present invention on the display portion 423. It is produced by using

[0141] Furthermore, by using the display device provided with the spacers having the light-shielding properties shown in the above embodiment, Since the display is less likely to have color bleeding or color shift, By using it for the display unit 423, it is possible to provide a display unit with higher display quality than conventional ones. do.

[0142] FIG. 8D shows an example of a mobile phone. A mobile phone 430 is assembled in a housing 431. In addition to the built-in display 432, there are a power button 433, an external connection port 434, and a speaker 435. , a microphone 436, and an operation button 437. The mobile phone 430 is an embodiment of the present invention. The display device manufactured using the embodiment is used for the display portion 432 .

[0143] The mobile phone 430 shown in FIG. 8(D) allows users to input information by touching the display unit 432 with a finger or the like. You can perform operations such as typing, making calls, or composing emails.

[0144] The screen of the display unit 432 has three main modes. The first is a display mode that mainly displays images. The first mode is a display mode, and the second mode is an input mode that mainly inputs information such as characters. It is a mixture of two modes: mode and input mode.

[0145] For example, when making a call or creating an email, the display unit 432 is used mainly for inputting characters. In this input mode, you can input the characters displayed on the screen. It is preferable to display a keyboard or number buttons on most of the screen of the display unit 432. stomach.

[0146] In addition, the mobile phone 430 may include a sensor for detecting tilt, such as a gyro or an acceleration sensor. By providing a detection device for detecting the orientation of the mobile phone 430 (portrait or landscape), The screen display on the display unit 432 can be automatically switched.

[0147] The screen mode can be switched by touching the display unit 432 or by operating the operation button on the housing 431. 437. Also, depending on the type of image displayed on the display unit 432, For example, if the image signal to be displayed on the display unit is video data, If it is text data, the mode is switched to input mode.

[0148] In the input mode, the signal detected by the optical sensor of the display unit 432 is detected. If there is no input by touch operation of 432 for a certain period of time, the screen mode will change from input mode to The display mode may be switched to the display mode.

[0149] The display unit 432 can also function as an image sensor. By touching the palm or fingers to the 432 and capturing images of palm prints, fingerprints, etc., identity authentication can be performed. In addition, the display unit may be equipped with a backlight that emits near-infrared light or a sensor that emits near-infrared light. By using a scanning light source, it is also possible to capture images of finger veins, palm veins, etc.

[0150] By using the display device having the spacers having the light-shielding property shown in the above embodiment, Since color bleeding and color shift are unlikely to occur in the display device, the display device is used as the display unit 4 of a mobile phone. By using 32, it is possible to produce mobile phones with higher display quality than conventional ones. In addition, the pair of substrates are held together by a light-shielding spacer, so they are not subject to shock or distortion. Since it is extremely resistant to any external force, it can be suitably used as a mobile phone as shown in FIG. 8(D). do.

[0151] As described above, the configurations, methods, etc. shown in this embodiment may be applied to the configurations, methods, etc. shown in other embodiments. They can be used in any suitable combination. [Explanation of symbols]

[0152] 101 First gate signal line 102 Second gate signal line 103 Data Line 104 1st wiring 105 2nd wiring 106 3rd wiring 107 Display element 108 Capacitor 109 First Transistor 110 Second transistor 111 Third transistor 112 4th transistor 113 5th Transistor 114 6th Transistor 201 First gate signal line 202 Second gate signal line 203 3rd gate signal line 204 4th gate signal line 205 5th gate signal line 206 Data Line 207 1st wiring 208 2nd wiring 209 3rd wiring 210 Light-emitting element 211 Capacitor 212 First transistor 213 Second transistor 214 Third Transistor 215 4th transistor 216 5th transistor 217 6th Transistor 218 7th Transistor 301 First board 302 Undercoat insulation layer 303 1st layer wiring 304 Gate insulator 305 Semiconductor layer 306 Contact Hole No. 1 307 2nd layer wiring 308 First interlayer insulator 309 Second interlayer insulator 310 Second Contact Hole 311 3rd layer wiring 312 Third interlayer insulator 313 Fourth interlayer insulator 314 3rd Contact Hole 315 Reflective electrode layer 316 Bulkhead 317 Light-emitting layer 318 Transparent electrode layer 319 Second board 320 Light-shielding film 321 Color Filter 322 Overcoat film 323 Space 400 tables 401 Case 402 Legs 403 Display section 404 View Button 405 power cord 410 Television Equipment 411 Case 412 Display section 413 Stand 414 Remote Controlled Device 415 Display section 416 Operation Key 420 Personal Computer 421 Case 422 Case 423 Display section 424 keyboard 425 external connection port 426 Pointing Device 430 Mobile Phones 431 Case 432 Display section 433 Power Button 434 external connection port 435 Speaker 436 Mike 437 Operation Button N1 First node N2 Second node N3 Third node

Claims

1. A first wiring to which video data is supplied; a first gate signal line having a region extending in a first direction and intersecting the first wiring; a second gate signal line having a region extending in the first direction; a second wiring having a region extending in the first direction; A light-emitting element; a first transistor having a function of controlling a current flowing from the second wiring to the light-emitting element in accordance with the video data, a first conductive film having a function as the second wiring, a second conductive film having a function as the first gate signal line, and a third conductive film having a function as the second gate signal line each have a region in contact with an upper surface of a first insulating film; a fourth conductive film having a function as a gate electrode of the first transistor has a region in contact with an upper surface of a second insulating film having a region disposed below the first insulating film, and does not overlap with the second conductive film and the third conductive film in a plan view; the fifth conductive film having a function as the first wiring has a region in contact with an upper surface of a third insulating film different from the first insulating film; Light-emitting device.

2. In claim 1, the second wiring, the first gate signal line, and the second gate signal line have regions extending in the same direction; Light-emitting device.

3. In claim 1 or claim 2, a second transistor in the pixel; the first gate signal line is electrically connected to a gate electrode of the second transistor; a sixth conductive film having a function as a gate electrode of the second transistor has a region in contact with an upper surface of the second insulating film; Light-emitting device.

4. In any one of claims 1 to 3, a third transistor in the pixel; the second gate signal line is electrically connected to a gate electrode of the third transistor; a seventh conductive film having a function as a gate electrode of the third transistor has a region in contact with an upper surface of the second insulating film; Light-emitting device.

Images