Semiconductor device, display, imaging apparatus, and electronic apparatus

Abstract

To provide a semiconductor device that, even when electrodes of a wiring board are crimped shifted to terminals of an element substrate, can reduce the conduction failure between the element substrate and the wiring board.SOLUTION: A semiconductor device comprises: a first substrate; a function element that is arranged on a principal surface of the first substrate; terminals that are electrically connected with the function element and arranged on a second substrate different from the first substrate; an insulating part that covers ends of the terminals; and a conductive film that is arranged on the terminals and the insulating part and contains conductive particles. On a cross section perpendicular to the principal surface of the first substrate, the insulating part has an upside and lateral sides inclined with respect to the upside, and the width of the upside is smaller than the diameter of the conductive particles.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present invention relates to a semiconductor device connected to a wiring board. [Background technology]

[0002] A semiconductor device that captures or displays an image has an element substrate on which elements and external connection terminals are arranged, and the element substrate is connected to a wiring substrate for connecting to an external circuit. The wiring substrate (e.g., a flexible printed circuit board (hereinafter, FPC)) is joined to the external connection terminals of the element substrate via an anisotropic conductive film (ACF).

[0003] In recent years, in order to miniaturize semiconductor devices, there has been a demand for a smaller pitch between external connection terminals in order to narrow the area of ​​the external connection terminals. As the pitch between the external connection terminals becomes narrower, there is a problem in that bonding defects are more likely to occur due to misalignment between the external connection terminals of the element substrate and the wiring substrate.

[0004] Patent Document 1 discloses that an insulating portion is provided between external connection terminals on the element substrate side, and serves as a guide member to prevent misalignment of the wiring of the FPC. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Application Laid-Open No. 2015-232660 Summary of the Invention [Problem to be solved by the invention]

[0006] However, in order to use the insulating portion between the external connection terminals as a guide member, it is necessary to align the wiring substrate and the element substrate so that the electrodes of the wiring substrate are securely placed on the external connection terminals of the element substrate. Therefore, it is necessary to design the external connection terminals to be wider in consideration of the alignment margin, which results in the problem of making it difficult to narrow the pitch between the external connection terminals.

[0007] The present invention has been made in consideration of the above-mentioned problems, and its purpose is to provide a semiconductor device that can reduce poor conductivity between an element substrate and a wiring substrate even when an electrode of a wiring substrate is misaligned and crimped relative to a terminal of the element substrate. [Means for solving the problem]

[0008] The semiconductor device of the present invention comprises a first substrate, a functional element arranged on a main surface of the first substrate, a terminal electrically connected to the functional element and connected to an electrode arranged on a second substrate different from the first substrate, an insulating portion covering an end of the terminal, and a conductive film arranged on the terminal and the insulating portion and containing conductive particles, wherein in a cross section perpendicular to the main surface of the first substrate, the insulating portion has an upper edge and a side edge inclined relative to the upper edge, and the width of the upper edge is smaller than the diameter of the conductive particles. [Effects of the Invention]

[0009] According to the present invention, even when the electrodes of the wiring board are pressure-bonded out of alignment with the terminals of the element substrate, it is possible to reduce poor electrical continuity between the element substrate and the wiring board. [Brief explanation of the drawings]

[0010] [Figure 1] 1 is a schematic diagram illustrating a semiconductor device according to an embodiment of the present invention; [Figure 2] FIG. 2 is a cross-sectional view of a junction region in the semiconductor device of the embodiment; [Figure 3] FIG. 2 is a cross-sectional view of a junction region in the semiconductor device of the embodiment; [Figure 4] 3A and 3B are cross-sectional views illustrating a bonding region in an ACF compression bonding step in a semiconductor device according to an embodiment. [Figure 5] FIG. 2 is a cross-sectional view illustrating a junction region of the organic EL display device according to the embodiment. [Figure 6] 1A to 1C are diagrams illustrating a method for manufacturing an organic EL display device. [Figure 7]10 is a cross-sectional schematic view of a bonding region when an inter-terminal insulating layer is formed by an etch-back method. [Figure 8] FIG. 2 is a cross-sectional view illustrating a pixel of a light-emitting device according to an embodiment. [Figure 9] FIG. 1 is a schematic diagram illustrating a display device according to an embodiment. [Figure 10] 1 is a schematic diagram illustrating an imaging device and an electronic device according to an embodiment. [Figure 11] FIG. 1 is a schematic diagram illustrating a display device according to an embodiment. [Figure 12] 1 is a schematic diagram of a lighting device and a moving object according to an embodiment; [Figure 13] FIG. 1 is a schematic diagram showing a wearable device according to an embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0011] Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. Note that the following embodiments do not limit the scope of the invention claimed. Although multiple features are described in the embodiments, not all of these multiple features are necessarily essential to the invention, and multiple features may be combined arbitrarily. Furthermore, in the accompanying drawings, the same reference numerals are used to designate the same or similar components, and redundant explanations will be omitted.

[0012] FIG. 1(a) is a top view of a semiconductor device according to one embodiment of the present invention, and FIG. 1(b) is a cross-sectional view taken along line XX' in FIG. 1(a).

[0013] As shown in FIG. 1(a), the semiconductor device 500 includes an element substrate 100, a wiring substrate 300, and an anisotropic conductive film 200. The element substrate 100 includes an effective area AA on its main surface where a functional element 40 is provided, and a peripheral area PA located around the effective area AA. The peripheral area PA is further provided with a bonding area MA with the wiring substrate 300, and the anisotropic conductive film 200 is provided in the bonding area MA. The peripheral area PA may include a non-effective pixel area (not shown) where non-effective pixels are provided. The non-effective pixels are dummy pixels, reference pixels, test pixels, etc. that do not function as effective pixels.

[0014] As shown in FIG. 1(b), the element substrate 100 includes a substrate SUB, and of the front and back surfaces of the element substrate 100, the surface on which the transistors 10 are provided is referred to as the main surface 101. The transistors 10 are provided on the substrate SUB, and an insulating layer 20 is provided on the transistors 10. A wiring layer 30 and terminals 30P are provided inside the insulating layer 20. Openings are provided in the insulating layer 20 above the multiple terminals 30P, exposing the external connection terminals 30P to the outside. A functional element 40 is provided on the insulating layer 20 in the effective area AA of the element substrate 100. If the semiconductor device 500 is a display device, the functional element 40 is a display element. The display element is an EL element in an ELD (electroluminescence display) or a reflective element in a DMD (digital mirror device). If the semiconductor device 500 is an imaging device, the functional element 40 is a photoelectric conversion element.

[0015] A passivation layer PV is provided on the functional element 40 to prevent moisture from diffusing into the functional element 40. An inter-terminal insulating portion 50 is provided between each terminal 30P on the insulating layer 20 in the bonding region MA. The passivation layer PV may be formed up to the bonding region MA and serve as the inter-terminal insulating portion 50. An anisotropic conductive film (ACF) 200 containing conductive particles 220 (see FIG. 2) is provided on the terminals 30P and the inter-terminal insulating portion 50, and the wiring substrate 300 is bonded via the anisotropic conductive film 200 (hereinafter referred to as ACF compression bonding). Although not shown, if the functional element 40 is a display element, a lens layer may be provided on the functional element 40 to efficiently extract light emitted from the display element. If the functional element 40 is an organic EL element that emits white light, a color filter layer may be provided separately on the functional element 40. The inter-terminal insulating portion 50 may be formed in the same layer as the lens layer and color filter layer. Alternatively, a structure may be used in which a transparent substrate such as glass is attached to the functional element 40 with an adhesive without providing the passivation layer PV.

[0016] Fig. 2(a) is a schematic cross-sectional view showing only the bonding area MA of the semiconductor device of this embodiment in an enlarged scale, and Fig. 2(b) is a schematic cross-sectional view showing the shape immediately before ACF compression bonding.

[0017] As shown in FIG. 2(a), an insulating layer 20 is provided on a substrate SUB, and terminals 30P are provided within the insulating layer 20. Inter-terminal insulating portions 50 are provided between each terminal 30P, and the inter-terminal insulating portions 50 cover the insulating layer 20 and the outer ends of each terminal 30P. By forming a highly moisture-proof inorganic film (an inorganic film with low moisture permeability) as the inter-terminal insulating portion 50 on the insulating layer 20 between the terminals, moisture-induced deterioration of functional elements 40 such as semiconductor elements and organic EL display elements can be suppressed. Alternatively, by forming a resin film with a low elastic modulus as the inter-terminal insulating portion 50 on the insulating layer 20 between the terminals, damage to the insulating layer 20 by conductive particles 220 contained in the anisotropic conductive film 200 during ACF compression bonding can be suppressed. The anisotropic conductive film 200 is composed of a resin portion 210 containing conductive particles 220 dispersed therein. The wiring substrate 300 is composed of a base substrate 310 and electrodes 320. The terminals 30P of the element substrate 100 and the electrodes 320 of the wiring substrate 300 face each other in a one-to-one relationship and are electrically connected via the conductive particles 220.

[0018] Next, the shape of the inter-terminal insulating portion 50, which is a characteristic portion of this embodiment, will be described using Fig. 2(b). Fig. 2(b) is a cross-sectional view of the wiring substrate 300 immediately before ACF bonding. As shown in Fig. 2(b), the inter-terminal insulating portion 50 has a substantially trapezoidal cross section with a top surface 50T and an inclined side surface 50S.

[0019] Here, in a cross section of the inter-terminal insulating portion 50 taken along the direction in which the multiple terminals 30P are arranged, the width of the upper surface (upper edge) 50T of the inter-terminal insulating portion 50 is defined as W, the width of the lower edge of the inter-terminal insulating portion 50 that contacts the insulating layer 20 and the outer ends of the terminals 30P is defined as S, the width of the inclined side surface (side edge) is defined as X, and the height from the surface of the terminals 30P to the upper surface 50T of the inter-terminal insulating portion 50 is defined as H. Also, the angle between the normal to the upper surface 50T and the inclined side surface 50S is defined as θ. Also, the width of the terminals 30P exposed from the inter-terminal insulating portion 50 is defined as L, and the diameter of the conductive particles 220 is defined as R.

[0020] The inter-terminal pitch P, which is the distance between adjacent terminals, can be expressed as L + S. The inter-terminal pitch P is, for example, 30 μm or less. The height H from the surface of the terminal 30P to the upper surface 50T of the inter-terminal insulating portion 50 is preferably smaller than the diameter R of the conductive particles 220. If the height H is larger than the diameter R of the conductive particles 220, misalignment may occur and cause a portion of the electrode 320 of the wiring substrate 300 to overlap (overlap) with the inter-terminal insulating portion 50 during thermocompression bonding. When the electrode 320 abuts against the upper surface 50T of the inter-terminal insulating portion 50, the electrode cannot descend any further once it abuts against the upper surface 50T of the inter-terminal insulating portion 50. As a result, the electrode 320 no longer abuts against the conductive particles 220 on the terminal 30P, resulting in poor electrical continuity. By making the height H from the surface of the terminal 30P to the upper surface 50T of the inter-terminal insulating portion 50 smaller than the diameter R of the conductive particles, stable electrical continuity can be obtained even if a portion of the electrode 320 of the wiring substrate 300 overlaps the inter-terminal insulating portion 50 due to misalignment.

[0021] Furthermore, the inter-terminal insulating portion 50 of this embodiment is characterized in that the width W of the upper surface 50T is smaller than the diameter R of the conductive particle 320. The effect of making the width W of the upper surface 50T of the inter-terminal insulating portion 50 smaller than the diameter R of the conductive particle 220 will be described later.

[0022] The width L of the terminals 30P exposed from the inter-terminal insulating portion 50 is, for example, 16 μm. The width S of the lower side of the inter-terminal insulating portion 50 is, for example, 6 μm, and therefore the inter-terminal pitch P is 22 μm. If the diameter R of the conductive particles 220 is, for example, 4 μm, the width W of the upper surface 50T of the inter-terminal insulating portion 50 may be smaller than 4 μm, for example, 3 μm. As already explained, the height H from the surface of the terminals 30P to the upper surface 50T of the inter-terminal insulating portion 50 is also preferably smaller than the diameter R of the conductive particles 220, for example, 2 μm. Furthermore, the angle θ between the normal to the upper surface 50T of the inter-terminal insulating portion 50 and the inclined side surface portion 50S is, for example, 60°.

[0023] If the width W of the upper surface 50T of the inter-terminal insulating portion 50 satisfies being smaller than the diameter R of the conductive particles 220, the inter-terminal insulating portion 50 may be not only a substantially trapezoidal shape as shown in Fig. 2(b), but also a semi-circular shape as shown in Fig. 3(a) or a triangular shape as shown in Fig. 3(b). Furthermore, it may also be a polygonal shape having a plurality of inclined side surfaces (50S1, 50S2) as shown in Fig. 3(c).

[0024] Even in the case of a semi-circular shape as shown in Fig. 3(a), it is preferable that the height H from the surface of the terminal 30P to the upper surface 50T of the inter-terminal insulating portion 50 is smaller than the diameter R of the conductive particles 220. Also, in the case of a semi-circular shape and a triangular shape as shown in Fig. 3(a) and Fig. 3(b), the width W of the upper surface of the inter-terminal insulating portion 50 approaches 0 infinitely, satisfying the relationship of W < R in this embodiment. The inter-terminal insulating portion 50 may be an elliptical shape, and the width at the top of the ellipse may be made smaller than R.

[0025] In the case of a polygonal shape having a plurality of inclined portions as shown in Fig. 3(c), the inclined portion contacting the terminal 30P is designated as 50S1, and the inclined portion connected to the inclined portion 50S1 is designated as 50S2. In this case, it is preferable that the height H1 from the surface of the terminal 30P to the connection point between the inclined portion 50S1 and the inclined portion 50S2 is smaller than the diameter R of the conductive particles 220. Even in the case of a polygonal shape having a plurality of inclined portions, it is more preferable that the height H from the surface of the terminal 30P to the upper surface of the inter-terminal insulating portion 50 is smaller than the diameter R of the conductive particles 220. At least the height H1 from the surface of the terminal 30P to the connection point between the inclined portion 50S1 and the inclined portion 50S2 is made smaller than the diameter R of the conductive particles 220. Thereby, even if a part of the electrode 320 of the wiring board 300 overlaps with the inclined portion 50S1 of the inter-terminal insulating portion 50 due to alignment deviation, contact between the electrode 320 and the inclined portion 50S1 is suppressed, and stable conduction can be achieved. When the diameter R of the conductive particles 220 is, for example, 4 μm, the height H1 from the surface of the terminal 30P to the connection point between the inclined portion 50S1 and the inclined portion 50S2 is, for example, 3 μm. The inter-terminal insulating portion 50 may be an asymmetric substantially trapezoidal shape or a triangular shape in which the inclination angles of the left and right inclined side surfaces 50S are different.

[0026] As shown in FIG. 4, the shape of the inter-terminal insulating portion 50 can be varied within the bonding region MA (the inter-terminal insulating portion 50 can have a variety of shapes). FIG. 4(a) is a schematic cross-sectional view of the region between the terminals located near the center of the bonding region MA, and FIG. 4(b) is a schematic cross-sectional view of the region between the terminals located near the edge of the bonding region MA. Near the center of the bonding region MA, the inter-terminal insulating portion 50 has a regular trapezoidal shape as shown in FIG. 4(a). On the other hand, near the edge of the bonding region MA, the inter-terminal insulating portion 50 is asymmetrical as shown in FIG. 4(b). Specifically, the width Xc of the inclined side surface portion 50SC near the center of the bonding region MA is wider than the width Xe of the inclined side surface portion 50SE near the edge of the bonding region MA, forming an asymmetric trapezoidal shape.

[0027] During the ACF bonding process, the wiring substrate 300 and the element substrate 100 thermally expand from the center of the bonding region MA toward the edges, resulting in a greater amount of thermal expansion of the wiring substrate 300 at the edges of the bonding region MA than at the center. Near the center of the bonding region MA, the amount of thermal expansion of the wiring substrate 300 is small, resulting in the electrode 320 of the wiring substrate 300 being positioned at the center of the terminal 30P, as shown in FIG. 4(a). In contrast, near the edges of the bonding region MA, the amount of thermal expansion of the wiring substrate 300 is large, resulting in the electrode 320 of the wiring substrate 300 being shifted from the center of the terminal 30P and overlapping the inter-terminal insulating portion 50, as shown in FIG. 4(b). Therefore, near the edges of the bonding region MA, the width Xc of the inclined side surface portion 50SC near the center of the bonding region MA is wider than the width Xe of the inclined side surface portion 50SE near the edges of the bonding region MA. This reduces poor electrical continuity due to misalignment caused by thermal expansion of the wiring substrate 300. When the shape of the inter-terminal insulating portion 50 is to be semicircular, elliptical, or asymmetrical trapezoidal, an etch-back method as described below can be used.

[0028] Next, the effect of making the width W of the upper surface of the inter-terminal insulating portion 50 smaller than the diameter R of the conductive particles will be described with reference to Fig. 5. Fig. 5 is a schematic cross-sectional view showing, in time sequence, the cross section of the bonding region in the process of ACF bonding the wiring substrate 300 to the element substrate 100. The figure shows a so-called misaligned state in which the electrode 320 of the wiring substrate 300 overlaps the inter-terminal insulating portion 50.

[0029] 5(a) shows a state in which the element substrate 100 and the wiring substrate 300 are temporarily attached via the anisotropic conductive film 200, i.e., a so-called temporary pressure-bonded state. Temporary pressure-bonding is typically performed at a low temperature of about 60 to 90° C. In this state, the gap between the terminal 30P and the electrode 320 of the wiring substrate 300 is larger than the diameter R of the conductive particle 220, and therefore the terminal 30P and the electrode 320 are not yet electrically connected.

[0030] FIG. 5(b) shows the compression heater HT gradually descending while in contact with the base substrate 310 of the wiring substrate 300. When heat and a load are applied to the resin portion 210 via the base substrate 310 of the wiring substrate 300, the resin portion 210 softens and becomes fluid due to the heat, and the conductive particles 220 are pushed by the electrodes 320 and move inside the resin portion 210. FIG. 5(b) shows the force vector V acting on the conductive particles 220. The conductive particles 220 are pushed by the electrodes 320 and move along the inclined side surfaces 50S of the inter-terminal insulating portion 50, eventually coming into contact with the terminals 30P as shown in FIG. 5(c), and are in contact with both the terminals 30P and the electrodes 320. While maintaining this state, the resin portion 210 is completely hardened by the heat from the compression heater HT, and the conductive particles 220 are fixed in contact with both the terminals 30P and the electrodes 320.

[0031] As the width W of the upper surface 50T of the inter-terminal insulating portion 50 increases, the conductive particles 220 become more likely to be trapped between the upper surface 50T of the inter-terminal insulating portion 50 and the electrode 320. When the conductive particles 220 are sandwiched between the upper surface 50T of the inter-terminal insulating portion 50 and the electrode 320, the gap between the terminal 30P and the electrode 320 becomes larger than the diameter R of the conductive particles 220. As a result, the conductive particles 220 cannot contact both the terminal 30P and the electrode 320, resulting in poor electrical continuity. The width W of the upper surface 50T of the inter-terminal insulating portion 50 is preferably smaller than the diameter R of the conductive particles 220, and more preferably equal to or smaller than half the diameter R of the conductive particles 220. By making the width W of the upper surface 50T of the inter-terminal insulating portion 50 smaller than the diameter R of the conductive particles, the probability of the conductive particles 220 being trapped on the upper surface 50T of the inter-terminal insulating portion 50 is reduced, thereby reducing poor electrical continuity.

[0032] Furthermore, the angle θ between the normal to the upper surface 50T of the inter-terminal insulating portion 50 and the inclined portion is preferably 30° or more and 70° or less. If θ is less than 30°, the width of the inclined side surface 50S of the inter-terminal insulating portion 50 becomes narrow, thereby reducing the effect of this embodiment. Conversely, if θ is greater than 70°, the conductive particles 220 become less likely to move along the inclined side surface 50S of the inter-terminal insulating portion 50, thereby reducing the effect of this embodiment. In addition, the width of the inclined side surface 50S becomes wider, resulting in a larger inter-terminal pitch. For these reasons, θ is preferably 30° or more and 70° or less. As described above, this embodiment can reduce poor conduction between the element substrate 100 and the wiring substrate 300 even when misalignment occurs between the substrates.

[0033] A manufacturing method of an organic EL display device 700, which is an example of the semiconductor device of this embodiment, will be described with reference to FIG. 6. As shown in FIG. 6, the organic EL display device 700 includes a substrate SUB. The substrate SUB may be made of, for example, silicon. A semiconductor element 10, such as a transistor, is provided on a main surface 101, which is the surface of the substrate SUB. An insulating layer 20 is provided on the semiconductor element 10 and the main surface 101 of the substrate SUB. Silicon oxide, silicon nitride, silicon carbide, or the like is used for the insulating layer 20. Contact plugs (not shown) electrically connected to the semiconductor element 10 are disposed in the insulating layer 20. A conductive material, such as tungsten, is embedded in the contact plugs. A wiring layer 30 electrically connected to the semiconductor element 10 via the contact plugs is provided within the insulating layer 20. A metal material, such as aluminum or copper, is used for the wiring layer 30, and a barrier metal, such as Ti, Ta, TiN, or TaN, may be provided at the interface between the insulating layer and the wiring structure to suppress metal diffusion into the insulating layer.

[0034] In the peripheral circuit region PA of the element substrate 100, terminals 30P for connection to an external power supply and ground wiring 30C are provided in the same layer as the wiring layer 30, but the insulating layer 20 is removed above the terminals 30P to expose the terminal surfaces. Also, the ground wiring 30C is opened to connect to the counter electrode 44 constituting the organic EL element, as will be described later.

[0035] An organic EL element 40 is provided on the insulating layer 20 in the effective pixel area AA. The organic EL element 40 has at least a pixel electrode 42 electrically connected to the wiring layer 30 via a through-hole, an organic light-emitting layer 43, and a counter electrode 44. The pixel electrodes 42 are separated for each pixel by separators 41 provided on the insulating layer 20. Covering the ends of the pixel electrodes 42 with the separators 41 prevents short circuits between the pixel electrodes 42 and the counter electrode 44. To facilitate the injection and transport of holes from the pixel electrodes 42, a hole injection layer and a hole transport layer are preferably formed between the pixel electrodes 42 and the organic light-emitting layer. Furthermore, to facilitate the injection and transport of electrons from the counter electrode 44, an electron transport layer and an electron injection layer are preferably formed between the pixel electrodes 42 and the organic light-emitting layer. In this example, a layered structure of pixel electrode 42 / hole injection layer / hole transport layer / organic light-emitting layer / electron transport layer / electron injection layer / counter electrode 44 is used.

[0036] The counter electrode 44 is an electrode common to all pixels, extends to the peripheral circuit area PA, and is connected to the aforementioned ground wiring 30C. The connection between the ground wiring 30C and the counter electrode 44 is generally called the cathode contact. The organic light-emitting layer 43 and the counter electrode 44 are formed over the entire effective pixel area by vapor deposition or sputtering using a metal mask, but a gap occurs between the metal mask and the substrate, causing wraparound beyond the metal mask opening. Because the wraparound of the organic light-emitting layer is 0.2 mm or more, it is preferable to position the cathode contact at least 0.2 mm outside the edge of the effective pixel area.

[0037] Thereafter, a passivation layer PV is formed over the entire main surface 101 of the substrate SUB to suppress moisture penetration into the organic EL elements 40. The passivation layer PV can be an inorganic insulating film such as silicon nitride, silicon oxynitride, or aluminum oxide. In this embodiment, silicon nitride is formed to a thickness of 2 μm as the passivation layer PV. The passivation layer PV formed on the terminals 30P is then etched away using a photolithography process to expose the terminals 30P. In other words, in this embodiment, the passivation layer PV (sealing film) for protecting the organic EL elements 40 from moisture also serves as the inter-terminal insulating portion 50. By continuously forming the passivation layer PV and the inter-terminal insulating portion 50 in the same layer, the inter-terminal insulating portion 50 can be formed without increasing the number of processes.

[0038] As described above, the inter-terminal insulating portion 50 has a top surface 50T and an inclined side surface 50S. Any etching method, such as wet etching using a chemical solution or chemical dry etching, can be used to form the inclined side surface 50S of the inter-terminal insulating portion 50. In this embodiment, the inclined side surface 50S is formed by dry etching silicon nitride as the inter-terminal insulating portion 50 using CHF / O / Ar gas. Adding O gas causes the resist to recede in the width direction during dry etching, resulting in a side surface shape inclined at any angle.

[0039] 7, the cross-sectional shape of the resist mask RM is made semicircular, and the semicircular shape of the resist mask is transferred by dry etching, a so-called etch-back method, thereby making it possible to form the inter-terminal insulating portion 50 in a semicircular shape. When the resist mask RM is made to have an asymmetric trapezoidal shape or a polygonal shape having multiple inclined portions, it may be formed by using the etch-back method in the same manner.

[0040] A lens structure (not shown) for increasing light extraction efficiency may be separately provided on the passivation layer PV, and the semicircular inter-terminal insulating portion 50 may be formed in the same process as the lens structure.

[0041] Next, an ACF bonding process is performed in which the wiring substrate 300 is pressure-bonded to the element substrate 100 via the anisotropic conductive film 200. In this embodiment, a flexible printed circuit (FPC) is used as the wiring substrate 300. The anisotropic conductive film 200 is an anisotropic conductive tape in which conductive particles 220 with a diameter of 4 μm are dispersed in epoxy resin. The anisotropic conductive tape is attached to the electrode surface of the FPC (300), and alignment marks formed on the FPC (300) and the element substrate 100 are used to align them using images from a CCD camera or the like. After that, the FPC (300) is pre-pressed to the element substrate 100. The temperature for pre-pressing is 60°C. Next, the resin of the anisotropic conductive film 200 is completely cured by performing final pressure bonding at 180°C for 20 seconds, completing the ACF bonding.

[0042] Although it depends on the pressure bonding device, the accuracy of alignment using an image is about 6 μm. In addition to the accuracy of image alignment, misalignment occurs due to the difference in the amount of thermal expansion between the element substrate 100 and the wiring substrate 300 during the actual pressure bonding. In general, polyimide resin is used as the base material for the FPC used as the wiring substrate 300, and the thermal expansion coefficient of silicon in the element substrate 100 (3 to 4 × 10 -6 Low expansion FPCs with a thermal expansion coefficient close to 1 / °C are also available commercially.

[0043] For example, when calculating the amount of thermal expansion for a substrate with a width of 20 mm, the difference in the thermal expansion coefficient between silicon and polyimide is only 0.7 x 10 -6 Even if a low-expansion FPC with a thermal expansion coefficient of 3.7 × 10 / °C is used, there will be a difference of 2 μm in the amount of thermal expansion. Also, even if the thermal expansion coefficients of the element substrate 100 and FPC (300) are the same, the temperature of the FPC, which the compression heater comes into direct contact with, and the element substrate, which it comes into indirect contact with, is different, so the amount of thermal expansion will also differ depending on the temperature difference between the substrates. Silicon and polyimide with a width of 20 mm both have the same thermal expansion coefficient of 3.7 × 10 -6 Even if the temperature distribution is 200°C / °F, if the temperature of the FPC (polyimide) is 200°C, the temperature of the anisotropic conductive film is 180°C, and the temperature of the element substrate (silicon) is 160°C, there will be a difference of approximately 3 μm in the amount of thermal expansion for a similar substrate width of 20 mm.

[0044] Therefore, when considering both image alignment accuracy and thermal expansion deviations, a total deviation of approximately 10 μm must be assumed. In this embodiment, the width L of the exposed terminals 30P is 20 μm, and the inter-terminal insulating portion 50 is trapezoidal, with an upper side 50T width W of 2 μm, a lower side width S of 8 μm, an inter-terminal pitch L+S of 28 μm, and inclined side portions 50S each having a width of 3 μm. The FPC electrode width is 8 μm. In this case, if the center of the terminals of the element substrate 100 and the center of the electrodes of the FPC (300) are misaligned by 6 μm or more on one side, the electrodes of the FPC (300) will overlap the inter-terminal insulating portion 50.

[0045] If the center of the terminal 30P of the element substrate 100 and the center of the electrode 320 of the FPC are misaligned by 10 μm on one side due to factors such as image alignment accuracy and differences in thermal expansion, the electrode 320 of the FPC will overlap the inter-terminal insulating portion 50 by 4 μm. However, in this embodiment, the width of the inclined side surface 50S is 3 μm, and the electrode 320 and the upper surface of the inter-terminal insulating portion 50 overlap by only 1 μm, so the probability that a conductive particle 220 with a diameter of 4 μm will be captured between the electrode 320 and the upper surface 50T of the inter-terminal insulating portion 50 is extremely low. Furthermore, the conductive particles 220 present between the 3 μm-wide inclined side surface 50S and the electrode 320 will move along the inclined surface onto the terminal portion 30P, making it less likely to cause poor conductivity.

[0046] As described above, by configuring the inter-terminal insulating portion 50 as described above, it is possible to reduce poor electrical continuity when the electrodes 320 of the wiring substrate 300 are misaligned and crimped relative to the terminal portions 30P of the element substrate 100. In other words, it is no longer necessary to design the terminal width 30P to be wide in consideration of alignment accuracy and margins for misalignment due to differences in thermal expansion, and it is possible to narrow the terminal width and the inter-terminal pitch. As a result, it is possible to miniaturize the semiconductor device.

[0047] (Comparative Example) An organic EL display device with a larger upper surface width of the inter-terminal insulating portion 50 was fabricated and compared with the above embodiment. The exposed terminal width L was 20 μm, the inter-terminal insulating portion had an upper edge width W of 7 μm, a lower edge width S of 8 μm, and an inter-terminal pitch L+S of 28 μm. The inclined surfaces were trapezoidal with widths of 0.5 μm on each side, the FPC electrode width was 8 μm, and the conductive particles had a diameter of 4 μm. Other than the shape of the inter-terminal insulating portion 50, the organic EL display device had the same structure and manufacturing method as the above embodiment.

[0048] For the element substrates of the embodiment and the comparative example, 10 organic EL display devices were fabricated using ACF bonding with intentional misalignment of 5 μm, 7 μm, and 9 μm when aligning the FPC to the element substrate, and the number of occurrences of electrical continuity defects was compared. The results are shown in Table 1.

[0049] [Table 1]

[0050] As shown in Table 1, in the comparative example, a conduction failure occurred when the misalignment amount was 7 μm or more, whereas in the configuration of this embodiment, no conduction failure occurred even when the misalignment amount was 9 μm. Therefore, it was confirmed that by using the configuration of the above embodiment, conduction failure can be suppressed when the misalignment amount between the wiring substrate 300 and the element substrate 100 becomes large.

[0051] [Configuration of organic light-emitting element] Next, an organic light-emitting element to which the configuration of this embodiment is applied will be described. The organic light-emitting element is configured by forming an insulating layer, a first electrode, an organic compound layer, and a second electrode on a substrate. A protective layer, a color filter, a microlens, etc. may be provided on the cathode. When a color filter is provided, a planarizing layer may be provided between the protective layer. The planarizing layer can be made of acrylic resin, etc. The same applies when a planarizing layer is provided between the color filter and the microlens.

[0052] [substrate] Examples of the substrate include quartz, glass, a silicon wafer, a resin, and a metal. Furthermore, the substrate may be provided with a switching element such as a transistor and wiring, and an insulating layer thereon. Any material can be used for the insulating layer, as long as it allows for the formation of a contact hole so that wiring can be formed between the first electrode and the insulating layer, and ensures insulation from wiring that is not connected. For example, resins such as polyimide, silicon oxide, silicon nitride, etc. can be used.

[0053] [electrode] A pair of electrodes can be used. The pair of electrodes may be an anode and a cathode. When an electric field is applied in the direction in which the organic light-emitting element emits light, the electrode with a higher potential is the anode, and the other is the cathode. It can also be said that the electrode that supplies holes to the light-emitting layer is the anode, and the electrode that supplies electrons is the cathode.

[0054] The anode material should have as high a work function as possible. Examples include simple metals such as gold, platinum, silver, copper, nickel, palladium, cobalt, selenium, vanadium, and tungsten, mixtures containing these metals, alloys of these metals, and metal oxides such as tin oxide, zinc oxide, indium oxide, indium tin oxide (ITO), and zinc indium oxide. Conductive polymers such as polyaniline, polypyrrole, and polythiophene can also be used.

[0055] These electrode materials may be used alone or in combination of two or more. The anode may be composed of one layer or multiple layers.

[0056] When used as a reflective electrode, for example, chromium, aluminum, silver, titanium, tungsten, molybdenum, or alloys or laminates thereof can be used. The above materials can also function as a reflective film without functioning as an electrode. When used as a transparent electrode, transparent conductive oxide layers such as indium tin oxide (ITO) and indium zinc oxide can be used, but are not limited to these. Photolithography techniques can be used to form the electrode.

[0057] On the other hand, materials with a low work function are preferred for the cathode. Examples include alkali metals such as lithium, alkaline earth metals such as calcium, and metals such as aluminum, titanium, manganese, silver, lead, and chromium, as well as mixtures containing these metals. Alternatively, alloys combining these metals can be used. For example, magnesium-silver, aluminum-lithium, aluminum-magnesium, silver-copper, and zinc-silver can be used. Metal oxides such as indium tin oxide (ITO) can also be used. These electrode materials can be used alone or in combination. The cathode can have either a single-layer or multi-layer structure. Among these, silver is preferred, and a silver alloy is even more preferred to reduce silver aggregation. The alloy ratio is not critical as long as silver aggregation can be reduced. For example, the silver:other metal ratio can be 1:1, 3:1, or the like.

[0058] The cathode may be a top-emission element using an oxide conductive layer such as ITO, or a bottom-emission element using a reflective electrode such as aluminum (Al), and is not particularly limited. The method for forming the cathode is not particularly limited, but DC and AC sputtering methods are more preferred because they provide good film coverage and make it easier to reduce resistance.

[0059] [Organic compound layer] The organic compound layer may be formed as a single layer or as multiple layers. When multiple layers are included, they may be called hole injection layer, hole transport layer, electron blocking layer, light-emitting layer, hole blocking layer, electron transport layer, or electron injection layer depending on their functions. The organic compound layer is mainly composed of organic compounds but may also contain inorganic atoms or inorganic compounds. For example, the organic compound layer may contain copper, lithium, magnesium, aluminum, iridium, platinum, molybdenum, zinc, or the like. The organic compound layer may be disposed between the first electrode and the second electrode, or may be disposed in contact with the first electrode and the second electrode.

[0060] [Protective layer] A protective layer may be provided on the cathode. For example, by adhering glass with a moisture absorbent on the cathode, the intrusion of water and other contaminants into the organic compound layer can be reduced, thereby reducing the occurrence of display defects. In another embodiment, a passivation film such as silicon nitride may be provided on the cathode to reduce the intrusion of water and other contaminants into the organic compound layer. For example, after forming the cathode, the cathode may be transferred to another chamber without breaking the vacuum, and a 2 μm-thick silicon nitride film may be formed by CVD to serve as a protective layer. A protective layer may be provided using atomic layer deposition (ALD) after the CVD film formation. The material of the film formed by ALD is not limited, and may be silicon nitride, silicon oxide, aluminum oxide, or the like. Silicon nitride may be further formed on the film formed by ALD by CVD. The film formed by ALD may have a thickness smaller than that of the film formed by CVD. Specifically, the thickness may be 50% or less, or even 10% or less.

[0061] [Color Filter] A color filter may be provided on the protective layer. For example, a color filter taking into consideration the size of the organic light-emitting element may be provided on a separate substrate and then bonded to the substrate on which the organic light-emitting element is provided, or a color filter may be patterned on the protective layer described above using photolithography technology. The color filter may be made of a polymer.

[0062] [Planarization layer] A planarization layer may be provided between the color filter and the protective layer. The planarization layer is provided for the purpose of reducing the unevenness of the underlying layer. It may also be called a material resin layer without limiting its purpose. The planarization layer may be composed of an organic compound, and may be either a low molecular weight or a high molecular weight, but a high molecular weight is preferred.

[0063] The planarizing layer may be provided above or below the color filter, and may be made of the same or different materials, such as polyvinyl carbazole resin, polycarbonate resin, polyester resin, ABS resin, acrylic resin, polyimide resin, phenol resin, epoxy resin, silicone resin, and urea resin.

[0064] [Microlens] The light-emitting device may have an optical component such as a microlens on its light-emitting side. The microlens may be made of acrylic resin, epoxy resin, or the like. The microlens may be used to increase the amount of light extracted from the light-emitting device and to control the direction of the extracted light. The microlens may have a hemispherical shape. When the microlens has a hemispherical shape, among the tangents to the hemisphere, there is a tangent that is parallel to the insulating layer, and the point of contact between this tangent and the hemisphere is the vertex of the microlens. The vertex of the microlens can be determined in the same way in any cross-sectional view. In other words, among the tangents to the semicircle of the microlens in the cross-sectional view, there is a tangent that is parallel to the insulating layer, and the point of contact between this tangent and the semicircle is the vertex of the microlens.

[0065] It is also possible to define the midpoint of a microlens. In the cross section of the microlens, a line segment is imagined from the point where an arc shape ends to the point where another arc shape ends, and the midpoint of this line segment can be called the midpoint of the microlens. The cross section for determining the vertex and midpoint may be a cross section perpendicular to the insulating layer.

[0066] [Counter substrate] An opposing substrate may be provided on the planarization layer. The opposing substrate is called an opposing substrate because it is provided at a position corresponding to the aforementioned substrate. The constituent material of the opposing substrate may be the same as that of the aforementioned substrate. When the aforementioned substrate is defined as a first substrate, the opposing substrate may be a second substrate.

[0067] [Organic layer] The organic compound layers (hole injection layer, hole transport layer, electron blocking layer, light emitting layer, hole blocking layer, electron transport layer, electron injection layer, etc.) constituting the organic light emitting device according to one embodiment of the present invention are formed by the method shown below.

[0068] The organic compound layer constituting the organic light-emitting device according to one embodiment of the present invention can be formed by dry processes such as vacuum deposition, ionization deposition, sputtering, plasma, etc. Alternatively to the dry process, a wet process can be used in which the compound is dissolved in an appropriate solvent and a layer is formed by a known coating method (for example, spin coating, dipping, casting, LB method, inkjet method, etc.).

[0069] Here, when a layer is formed by a vacuum deposition method or a solution coating method, crystallization is unlikely to occur and the layer has excellent stability over time. When a film is formed by a coating method, the film can be formed by combining with an appropriate binder resin.

[0070] Examples of the binder resin include, but are not limited to, polyvinylcarbazole resin, polycarbonate resin, polyester resin, ABS resin, acrylic resin, polyimide resin, phenol resin, epoxy resin, silicone resin, and urea resin.

[0071] These binder resins may be used singly or in combination as homopolymers or copolymers, and may further contain known additives such as plasticizers, antioxidants, and ultraviolet absorbers, if necessary.

[0072] [Pixel circuit] The light-emitting device may have a pixel circuit connected to the light-emitting element. The pixel circuit may be an active matrix type that controls the emission of the first light-emitting element and the second light-emitting element independently. The active matrix type circuit may be voltage-programmed or current-programmed. The drive circuit has a pixel circuit for each pixel. The pixel circuit may have a light-emitting element, a transistor that controls the emission brightness of the light-emitting element, a transistor that controls the emission timing, a capacitor that holds the gate voltage of the transistor that controls the emission brightness, and a transistor for connecting to GND without going through the light-emitting element.

[0073] The light-emitting device has a display region and a peripheral region arranged around the display region. The display region has pixel circuits, and the peripheral region has a display control circuit. The mobility of a transistor constituting the pixel circuit may be lower than the mobility of a transistor constituting the display control circuit.

[0074] The slope of the current-voltage characteristics of the transistors that make up the pixel circuit may be smaller than the slope of the current-voltage characteristics of the transistors that make up the display control circuit. The slope of the current-voltage characteristics can be measured using the so-called Vg-Ig characteristics.

[0075] The transistors that make up the pixel circuit are transistors connected to light-emitting elements such as the first light-emitting element.

[0076] The magnitude of the drive current may be determined according to the size of the light-emitting area. Specifically, when the first light-emitting element and the second light-emitting element are caused to emit light with the same luminance, the current value passed through the first light-emitting element may be smaller than the current value passed through the second light-emitting element. This is because the required current may be small due to the small light-emitting area.

[0077] [Pixels] The light emitting device has a plurality of pixels, each of which has sub-pixels that emit different colors, and each of which may emit, for example, RGB colors.

[0078] The pixel emits light from an area called the pixel aperture. This area is the same as the first area. The pixel aperture may be 15 μm or less, or 5 μm or more. More specifically, it may be 11 μm, 9.5 μm, 7.4 μm, 6.4 μm, etc.

[0079] The distance between the subpixels may be 10 μm or less, and specifically may be 8 μm, 7.4 μm, or 6.4 μm.

[0080] The pixels may be arranged in a known manner in a plan view. For example, they may be in a stripe arrangement, a delta arrangement, a pentile arrangement, or a Bayer arrangement. The shape of the subpixels in a plan view may be any known shape. For example, they may be rectangular, quadrilaterals such as diamonds, or hexagons. Of course, a shape that is close to a rectangle, rather than an exact shape, is included in the rectangle. The shape of the subpixels and the pixel arrangement may be used in combination.

[0081] [Use of the organic light-emitting device according to one embodiment of the present invention] The organic light-emitting device according to one embodiment of the present invention can be used as a component of a display device or a lighting device, and can also be used as an exposure light source for an electrophotographic image forming device, a backlight for a liquid crystal display device, a light-emitting device having a white light source and a color filter, etc.

[0082] The display device may be an image information processing device that has an image input unit that inputs image information from an area CCD, a linear CCD, a memory card, etc., has an information processing unit that processes the input information, and displays the input image on the display unit.

[0083] The display unit of the imaging device or inkjet printer may have a touch panel function. The driving method of this touch panel function may be an infrared method, a capacitance method, a resistive film method, or an electromagnetic induction method, and is not particularly limited. The display device may also be used in the display unit of a multifunction printer.

[0084] Next, the display device according to this embodiment will be described with reference to the drawings.

[0085] 8 is a cross-sectional view showing an example of a display device having an organic light-emitting element and a transistor connected to the organic light-emitting element. The transistor is an example of an active element. The transistor may be a thin-film transistor (TFT).

[0086] FIG. 8(a) shows an example of a pixel, which is a component of the display device according to this embodiment. The pixel has sub-pixels 10. The sub-pixels are divided into 10R, 10G, and 10B based on their light emission. The emitted colors may be distinguished by the wavelength of light emitted from the light-emitting layer, or the light emitted from the sub-pixels may be selectively transmitted or color-converted using a color filter or the like. Each sub-pixel has a reflective electrode 2, which serves as a first electrode, on an interlayer insulating layer 1, an insulating layer 3 covering the edge of the reflective electrode 2, an organic compound layer 4 covering the first electrode and the insulating layer, a transparent electrode 5, a protective layer 6, and a color filter 7.

[0087] A transistor and a capacitor element may be disposed below or inside the interlayer insulating layer 1. The transistor and the first electrode may be electrically connected via a contact hole or the like (not shown).

[0088] The insulating layer 3 is also called a bank or pixel separation film. It covers the edges of the first electrode and surrounds the first electrode. The part where the insulating layer is not provided contacts the organic compound layer 4 and becomes the light-emitting region.

[0089] The organic compound layer 4 includes a hole injection layer 41 , a hole transport layer 42 , a first light-emitting layer 43 , a second light-emitting layer 44 , and an electron transport layer 45 .

[0090] The second electrode 5 may be a transparent electrode, a reflective electrode, or a semi-transparent electrode.

[0091] The protective layer 6 reduces the penetration of moisture into the organic compound layer. Although the protective layer is illustrated as a single layer, it may be a multi-layer structure. Each layer may be an inorganic compound layer and an organic compound layer.

[0092] The color filters 7 are divided into 7R, 7G, and 7B depending on their colors. The color filters may be formed on a planarization film (not shown). A resin protective layer (not shown) may be provided on the color filters. The color filters may be formed on a protective layer 6. Alternatively, the color filters may be provided on an opposing substrate such as a glass substrate and then bonded thereto.

[0093] The display device 100 in FIG. 8(b) includes an organic light-emitting element 26 and a TFT 18 as an example of a transistor. A substrate 11 made of glass, silicon, or the like is provided with an insulating layer 12 on top of it. An active element 18 such as a TFT is disposed on the insulating layer, and a gate electrode 13, a gate insulating film 14, and a semiconductor layer 15 of the active element are disposed on top of it. The TFT 18 also includes the semiconductor layer 15, a drain electrode 16, and a source electrode 17. An insulating film 19 is disposed on top of the TFT 18. An anode 21 constituting the organic light-emitting element 26 and the source electrode 17 are connected via a contact hole 20 provided in the insulating film.

[0094] The electrical connection between the electrodes (anode, cathode) included in the organic light-emitting element 26 and the electrodes (source electrode, drain electrode) included in the TFT is not limited to the embodiment shown in Fig. 8(b). In other words, it is sufficient that either the anode or the cathode is electrically connected to either the TFT source electrode or the drain electrode. TFT stands for thin film transistor.

[0095] 8(b), the organic compound layer 22 is illustrated as a single layer, but may be a multi-layer organic compound layer 22. A first protective layer 24 and a second protective layer 25 are provided on the cathode 23 to reduce deterioration of the organic light-emitting element.

[0096] In the display device 100 of FIG. 8(b), transistors are used as switching elements, but other switching elements may be used instead.

[0097] The transistors used in the display device 100 of Fig. 8(b) are not limited to transistors using single-crystal silicon wafers, but may also be thin-film transistors having an active layer on an insulating surface of a substrate. Examples of active layers include non-single-crystal silicon such as single-crystal silicon, amorphous silicon, and microcrystalline silicon, and non-single-crystal oxide semiconductors such as indium zinc oxide and indium gallium zinc oxide. Thin-film transistors are also called TFT elements.

[0098] The transistors included in the display device 100 of Fig. 8(b) may be formed within a substrate such as a Si substrate. Here, "formed within a substrate" means that the substrate itself, such as a Si substrate, is processed to form the transistors. In other words, having a transistor within a substrate can be seen as the substrate and the transistor being formed integrally.

[0099] The organic light-emitting element according to this embodiment has its emission brightness controlled by a TFT, which is an example of a switching element. By providing multiple organic light-emitting elements on a surface, an image can be displayed based on the emission brightness of each element. Note that the switching element according to this embodiment is not limited to a TFT, and may be a transistor formed from low-temperature polysilicon or an active matrix driver formed on a substrate such as a Si substrate. "On the substrate" can also be referred to as "inside the substrate." Whether to provide a transistor in the substrate or to use a TFT is determined by the size of the display unit. For example, for a display size of about 0.5 inches, it is preferable to provide the organic light-emitting element on a Si substrate.

[0100] 9 is a schematic diagram illustrating an example of a display device according to this embodiment. The display device 1000 may include a touch panel 1003, a display panel 1005, a frame 1006, a circuit board 1007, and a battery 1008 between an upper cover 1001 and a lower cover 1009. The touch panel 1003 and the display panel 1005 are connected by flexible printed circuits FPCs 1002 and 1004. Transistors are printed on the circuit board 1007. The battery 1008 may not be provided if the display device is not a portable device, and may be provided in a different position even if the display device is a portable device.

[0101] The display device according to this embodiment may have color filters having red, green, and blue colors, which may be arranged in a delta arrangement.

[0102] The display device according to the present embodiment may be used as a display unit of a mobile terminal. In this case, the display device may have both a display function and an operation function. Examples of the mobile terminal include a mobile phone such as a smartphone, a tablet, and a head-mounted display.

[0103] The display device according to this embodiment may be used as a display unit of an imaging device having an optical unit with a plurality of lenses and an imaging element that receives light that has passed through the optical unit. The imaging device may have a display unit that displays information acquired by the imaging element. The display unit may be a display unit exposed to the outside of the imaging device or a display unit disposed within a viewfinder. The imaging device may be a digital camera or a digital video camera.

[0104] 10(a) is a schematic diagram showing an example of an imaging device according to this embodiment. The imaging device 1100 may have a viewfinder 1101, a rear display 1102, an operation unit 1103, and a housing 1104. The viewfinder 1101 may have a display device according to this embodiment. In this case, the display device may display not only an image to be captured, but also environmental information, imaging instructions, and the like. The environmental information may include the intensity of external light, the direction of external light, the speed at which the subject is moving, the possibility that the subject will be blocked by an obstruction, and the like.

[0105] Since the optimum timing for capturing an image is very short, it is better to display information as soon as possible. Therefore, it is preferable to use a display device using the organic light-emitting element of the present invention. This is because the organic light-emitting element has a fast response speed. A display device using an organic light-emitting element can be used more preferably than a liquid crystal display device, which requires a high display speed.

[0106] The imaging device 1100 has an optical section (not shown). The optical section has multiple lenses, which form an image on an imaging element housed in a housing 1104. The focus of the multiple lenses can be adjusted by adjusting their relative positions. This operation can also be performed automatically. The imaging device may also be called a photoelectric conversion device. Instead of sequentially capturing images, the photoelectric conversion device can include an imaging method that detects the difference from the previous image, or a method of cutting out an image from a constantly recorded image, etc.

[0107] FIG. 10(b) is a schematic diagram showing an example of an electronic device according to this embodiment. The electronic device 1200 has a display unit 1201, an operation unit 1202, and a housing 1203. The housing 1203 may have a circuit, a printed circuit board having the circuit, a battery, and a communication unit. The operation unit 1202 may be a button or a touch panel type reaction unit. The operation unit may be a biometric recognition unit that recognizes a fingerprint to unlock the device, etc. An electronic device having a communication unit can also be called a communication device. The electronic device may further have a camera function by including a lens and an image sensor. An image captured by the camera function is displayed on the display unit. Examples of the electronic device include a smartphone and a laptop computer.

[0108] 11A and 11B are schematic diagrams illustrating an example of a display device according to this embodiment. Fig. 11A shows a display device such as a television monitor or a PC monitor. The display device 1300 has a frame 1301 and a display unit 1302. The light-emitting device according to this embodiment may be used in the display unit 1302.

[0109] It has a frame 1301 and a base 1303 that supports a display unit 1302. The base 1303 is not limited to the form shown in Fig. 11(a). The bottom side of the frame 1301 may also serve as the base.

[0110] The frame 1301 and the display unit 1302 may be curved. The radius of curvature may be 5000 mm or more and 6000 mm or less.

[0111] FIG. 11(b) is a schematic diagram illustrating another example of a display device according to this embodiment. The display device 1310 in FIG. 11(b) has a foldable display surface. The display device 1310 has a first display unit 1311, a second display unit 1312, a housing 1313, and a bending point 1314. The first display unit 1311 and the second display unit 1312 may include a light-emitting device according to this embodiment. The first display unit 1311 and the second display unit 1312 may be a single, seamless display unit. The first display unit 1311 and the second display unit 1312 can be separated by the bending point. The first display unit 1311 and the second display unit 1312 may display different images, or the first and second display units may display a single image.

[0112] FIG. 12(a) is a schematic diagram showing an example of a lighting device according to this embodiment. The lighting device 1400 may include a housing 1401, a light source 1402, a circuit board 1403, an optical film 1404, and a light diffusion unit 1405. The light source may include an organic light-emitting element according to this embodiment. The optical filter may be a filter that improves the color rendering of the light source. The light diffusion unit can effectively diffuse light from the light source, such as for illumination, and deliver the light over a wide area. The optical filter and the light diffusion unit may be provided on the light output side of the lighting. If necessary, a cover may be provided on the outermost part.

[0113] The lighting device is, for example, a device for illuminating a room. The lighting device may emit white, daylight white, or any other color from blue to red. It may have a dimming circuit for dimming these colors. The lighting device may have the organic light-emitting element of the present invention and a power supply circuit connected thereto. The power supply circuit is a circuit for converting AC voltage to DC voltage. Furthermore, white has a color temperature of 4200K, and daylight white has a color temperature of 5000K. The lighting device may have a color filter.

[0114] The lighting device according to this embodiment may also include a heat dissipation unit, which dissipates heat from within the device to the outside, and may be made of a material such as a metal with a high specific heat capacity or liquid silicon.

[0115] 12(b) is a schematic diagram of an automobile, which is an example of a moving body according to this embodiment. The automobile has tail lamps, which are an example of lighting fixtures. The automobile 1500 has tail lamps 1501, and may be configured to turn on the tail lamps when braking or the like is performed.

[0116] A tail lamp 1501 may include an organic light-emitting element according to this embodiment. The tail lamp may include a protective member for protecting the organic EL element. The protective member may be made of any material as long as it has a certain degree of strength and is transparent, but it is preferably made of polycarbonate or the like. Polycarbonate may be mixed with a furandicarboxylic acid derivative, an acrylonitrile derivative, or the like.

[0117] An automobile 1500 may have a body 1503 and a window 1502 attached thereto. The window may be a transparent display as long as it is not a window for checking the front and rear of the automobile. The transparent display may have an organic light-emitting element according to this embodiment. In this case, constituent materials of the electrodes and the like of the organic light-emitting element are made of transparent materials.

[0118] The moving body according to this embodiment may be a ship, an aircraft, a drone, or the like. The moving body may have a body and a lighting device provided on the body. The lighting device may emit light to indicate the position of the body. The lighting device has the organic light-emitting element according to this embodiment.

[0119] 13 is a schematic diagram of an eyeglass-type display device, which is an example of a wearable device to which a light-emitting device according to an embodiment of the present invention is applied. The display device can be applied to systems that can be worn as a wearable device, such as smart glasses, HMDs (head-mounted displays), and smart contact lenses. An image capturing and displaying device used in such an application example may include an image capturing device capable of photoelectrically converting visible light and a displaying device capable of emitting visible light.

[0120] 13(a) illustrates glasses 1600 (smart glasses) according to one application example. An imaging device 1602 such as a CMOS sensor or SPAD is provided on the front side of a lens 1601 of the glasses 1600. Furthermore, a display device according to any of the above-described embodiments is provided on the back side of the lens 1601.

[0121] The glasses 1600 further include a control device 1603. The control device 1603 functions as a power source that supplies power to the image capture device 1602 and the display device according to each embodiment. The control device 1603 also controls the operations of the image capture device 1602 and the display device. The lens 1601 is formed with an optical system for focusing light onto the image capture device 1602.

[0122] FIG. 13(b) illustrates glasses 1610 (smart glasses) according to one application example. The glasses 1610 include a control device 1612, which is equipped with an imaging device equivalent to the imaging device 1602 and a display device. A lens 1611 includes an optical system for projecting light emitted from the imaging device and the display device within the control device 1612, and an image is projected onto the lens 1611. The control device 1612 functions as a power source for supplying power to the imaging device and the display device and controls the operation of the imaging device and the display device. The control device may also include a gaze detection unit for detecting the wearer's gaze. Infrared light may be used for gaze detection. The infrared light emitter emits infrared light toward the eyeball of a user gazing at a displayed image. An imaging unit with a light receiving element detects the reflected light of the emitted infrared light from the eyeball, thereby obtaining an image of the eyeball. A reduction unit for reducing light from the infrared light emitter to the display unit in a planar view reduces degradation of image quality.

[0123] The gaze of the user relative to the displayed image is detected from an image of the eyeball obtained by capturing infrared light. Any known method can be used for gaze detection using an image of the eyeball. One example is a gaze detection method based on the Purkinje image formed by reflection of irradiated light on the cornea.

[0124] More specifically, gaze detection processing is performed based on the pupil-corneal reflex method, which calculates a gaze vector representing the direction (rotation angle) of the eyeball based on the pupil image and Purkinje image included in the captured image of the eyeball, thereby detecting the user's gaze.

[0125] A display device according to an embodiment of the present invention may have an imaging device having a light receiving element, and may control the image displayed on the display device based on information about the user's line of sight from the imaging device.

[0126] Specifically, the display device determines a first field of view area where the user gazes and a second field of view area other than the first field of view area based on the line-of-sight information. The first field of view area and the second field of view area may be determined by a control device of the display device, or may be determined by an external control device and received. In the display area of ​​the display device, the display resolution of the first field of view area may be controlled to be higher than the display resolution of the second field of view area. In other words, the resolution of the second field of view area may be lower than that of the first field of view area.

[0127] The display area includes a first display area and a second display area different from the first display area, and a high-priority area is determined from the first display area and the second display area based on line-of-sight information. The first field of view area and the second field of view area may be determined by a control device of the display device, or may be determined by an external control device and received. The resolution of the high-priority area may be controlled to be higher than the resolution of areas other than the high-priority area. In other words, the resolution of an area with a relatively low priority may be lowered.

[0128] Note that AI may be used to determine the first field of view area and areas with high priority. The AI ​​may be a model configured to estimate the angle of gaze and the distance to an object in the line of sight from an image of the eyeball, using as training data an image of the eyeball and the direction in which the eyeball in the image was actually looking. The AI ​​program may be included in the display device, the imaging device, or an external device. If included in an external device, it is transmitted to the display device via communication.

[0129] When display control is performed based on visual recognition detection, the smart glasses can be preferably applied to smart glasses that further include an imaging device for capturing images of the outside world. The smart glasses can display captured external information in real time.

[0130] Each term in this specification is used merely for the purpose of describing the present invention, and may include its equivalent, and the present invention is not limited to the strict meaning of the term.

[0131] The above-described embodiments are merely examples of specific embodiments for carrying out the present invention, and the technical scope of the present invention should not be construed as being limited by these embodiments. In other words, the present invention can be embodied in various forms without departing from its technical concept or main features. [Explanation of symbols]

[0132] 10: transistor, 20: insulating layer, 30: wiring layer, 30P: terminal, 40: functional element, 50: inter-terminal insulating portion, 100: element substrate, 200: anisotropic conductive film, 210: resin portion, 220: conductive particles, 300: wiring substrate, 310: base material, 320: electrode, 500: semiconductor device

Claims

[Claim 1] a first substrate; and a functional element disposed on a main surface of the first substrate; a terminal electrically connected to the functional element and connected to an electrode disposed on a second substrate different from the first substrate; an insulating portion covering an end of the terminal; a conductive film that is disposed on the terminal and the insulating portion and contains conductive particles; A semiconductor device characterized in that, in a cross section perpendicular to the main surface of the first substrate, the insulating portion has an upper edge and a side edge inclined relative to the upper edge, and the width of the upper edge is smaller than the diameter of the conductive particles.

Images