Substrate processing apparatus, substrate processing method, and article manufacturing method

Abstract

To provide a technique advantageous for preventing an organic solvent from being attached to a substrate again and obtaining an organic electronic material with higher quality.SOLUTION: A substrate processing apparatus drying a film applied to a substrate comprises: a first pressure reduction unit that can reduce the pressure inside a chamber to a first pressure; a second pressure reduction unit that can reduce the pressure inside the chamber to a pressure lower than the first pressure; and a desorption promotion unit that supplies a gas for promoting desorption of a solvent of the film to the chamber, the pressure inside of which is reduced to a second pressure lower than the first pressure.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The disclosed technology relates to a substrate processing apparatus, a substrate processing method, and a method for manufacturing an article using the substrate processing apparatus, which dry a substrate coated with a liquid material under reduced pressure in order to obtain a solid organic electronic material. [Background technology]

[0002] Organic light-emitting diodes (OLEDs), which utilize the light emitted by electronic materials called organic electroluminescence (EL), have traditionally been used in displays because of their superior response speed, viewing angle, and contrast ratio compared to liquid crystal displays.

[0003] Organic light-emitting diodes have a structure in which multiple organic EL layers are stacked between an anode and a cathode. For example, from the anode side, the following layers are stacked: a hole injection layer, a hole transport layer, an emitting layer, an electron transport layer, and an electron injection layer. In recent years, a method for forming these organic EL layers has been adopted, in which an ink made by dissolving an organic EL material in an organic solvent is used to directly print pixel patterns using inkjet printing without using a mask. This method allows for a significant reduction in the amount of organic EL material used compared to vapor deposition methods, in which the material is sprayed over the entire substrate, contributing to lower product costs.

[0004] Since the ink applied by the inkjet method contains a large amount of organic solvent, a process is used in which the organic solvent is dried and removed under reduced pressure using a vacuum chamber.

[0005] In this drying process, if undried organic solvent remains in the film or if solvent remaining in the atmosphere re-adheres, there is a concern that it may affect the formation of the next layer to be applied. Therefore, a high vacuum is used, for example, at a pressure of 1×10 -4 It is desirable to reduce the pressure in the vacuum chamber to 100 Pa, remove as much of the organic solvent as possible from the film, and prevent the organic solvent from remaining in the vacuum chamber.

[0006] Patent Document 1 discloses a vacuum device in which a high vacuum line connected to a turbo molecular pump or the like and capable of evacuating to a high vacuum, and a roughing line connected to a dry pump or the like and capable of evacuating to a low vacuum are separately connected to a vacuum chamber. [Prior art documents] [Patent documents]

[0007] [Patent Document 1] Japanese Patent Application Laid-Open No. 2001-81559 Summary of the Invention [Problem to be solved by the invention]

[0008] However, even when vacuum drying is performed using a vacuum chamber as disclosed in Patent Document 1, when a high vacuum line is used to reduce the pressure to a high vacuum, traces of organic solvent remain on the walls of the vacuum chamber and in the atmosphere within the vacuum chamber, which can result in a decrease in the degree of vacuum in the vacuum chamber compared to when the substrate is not processed. In other words, the organic solvent atmosphere remaining in the vacuum chamber re-adheres to the organic EL layer to be coated next, preventing sufficient drying and potentially affecting quality.

[0009] The disclosed technology has been developed based on the above-mentioned problems, and aims to provide an advantageous technology for preventing organic solvents from re-adhering to a substrate and obtaining higher quality organic electronic materials. [Means for solving the problem]

[0010] A substrate processing apparatus according to one aspect of the disclosed technology is a substrate processing apparatus that dries a film coated on a substrate, the substrate processing apparatus comprising: a first pressure reducing unit capable of reducing the pressure inside the chamber to a first pressure; a second pressure reducing unit capable of reducing the pressure inside the chamber to a pressure lower than the first pressure; and a desorption promoter that supplies a gas that promotes desorption of the solvent from the film to the chamber that has been depressurized to a second pressure that is lower than the first pressure. [Effects of the Invention]

[0011] The disclosed technology can provide an advantageous technology for preventing the organic solvent from re-adhering to the substrate and obtaining a higher quality organic electronic material.

[0012] By reducing the amount of organic solvent remaining in the vacuum chamber, it is possible to prevent a decrease in the degree of vacuum even when the substrate drying process is repeated, which also improves variation between substrates when drying multiple substrates. [Brief explanation of the drawings]

[0013] [Figure 1] FIG. 1 is a diagram illustrating an example of the arrangement of a substrate processing apparatus according to an embodiment. [Figure 2] 5A to 5C are diagrams showing a flow of a substrate processing method in the substrate processing apparatus according to the embodiment. [Figure 3] 3 is a diagram showing an example of the transition of pressure control in the substrate processing method of FIG. 2. [Figure 4] FIG. 2 is a diagram illustrating an example of the configuration of a substrate processing apparatus having a gas heating unit. [Figure 5] FIG. 10 is a diagram illustrating a first modified example of the substrate processing apparatus according to the embodiment. [Figure 6] FIG. 10 is a diagram illustrating a second configuration example of the substrate processing apparatus according to the embodiment. [Figure 7] 10 is a flowchart showing a substrate processing method in the substrate processing apparatus according to the second modification. DETAILED DESCRIPTION OF THE INVENTION

[0014] Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. Note that the following embodiments do not limit the scope of the invention claimed. Although multiple features are described in the embodiments, not all of these multiple features are necessarily essential to the invention, and multiple features may be combined arbitrarily. Furthermore, in the accompanying drawings, the same reference numerals are used to designate the same or similar components, and redundant explanations will be omitted.

[0015] 1 is a schematic cross-sectional view showing the configuration of a substrate processing apparatus according to this embodiment. The substrate processing apparatus SPA can be configured to process a substrate 2 (hereinafter also referred to as a workpiece) on which a film has been applied. More specifically, the substrate processing apparatus SPA can be configured to perform a drying process for drying the film applied to the substrate 2.

[0016] The film applied to the substrate 2 may be, for example, a film composed of a solution containing a solute and a solvent for forming an organic film of an organic electronic material (organic EL element). The solvent may have a property that evaporation is promoted in a reduced pressure environment lower than atmospheric pressure. The organic film may be, for example, any of the hole injection layer, hole transport layer, light-emitting layer, electron transport layer, and electron injection layer of the organic EL element. The production of an organic EL element may include a process of forming each organic film, such as the hole injection layer, hole transport layer, light-emitting layer, electron transport layer, and electron injection layer, on the substrate. The film may be applied by a coating device that applies a film onto the substrate 2 before the substrate 2 is transported to the substrate processing apparatus SPA.

[0017] The substrate processing apparatus SPA may include a chamber 1. The chamber 1 is a member that defines an internal space SP1 that is separated from an external space. The chamber 1 is a member that surrounds the internal space SP1. Hereinafter, the internal space SP1 whose outer edge is defined by the chamber 1 will also be referred to as the internal space SP1 of the chamber 1. In this embodiment, the space on the side where the substrate 2 is placed will be referred to as the "inside," and the space on the side where the substrate 2 is not placed will be referred to as the "outside."

[0018] The chamber 10 may include a gate valve 12. A substrate 2 to be subjected to a drying process may be transferred from an external space to the internal space SP1 through the gate valve 12. The substrate 2 transferred into the internal space SP1 via the gate valve 12 is placed on a substrate holder 11 (stage) disposed in the internal space SP1. The substrate holder 11 functions as a substrate holder that holds the substrate 2 transferred into the internal space SP1. Furthermore, the substrate 2 that has undergone the drying process may be transferred from the internal space SP1 to the external space through the gate valve 12.

[0019] The substrate processing apparatus SPA may further include a pressure reduction unit that reduces the pressure in the internal space SP1 of the chamber 10. The pressure reduction unit includes, for example, a vacuum valve 3 connected to a dry pump 4 through an exhaust pipe 15, and a round gate valve 5 connected to a turbomolecular pump (TMP) 6, independently of the vacuum valve 3, in order to exhaust and remove a solvent from a film (an organic film of an organic EL element) coated on the substrate 2. In the following description, the vacuum valve 3 and the dry pump 4 are also referred to as a first pressure reduction unit (3, 4), and the round gate valve 5 and the turbomolecular pump (TMP) 6 are also referred to as a second pressure reduction unit (5, 6). The first pressure reduction unit (3, 4) and the second pressure reduction unit (5, 6) are also collectively referred to as pressure reduction units (3-6).

[0020] The vacuum valve 3 used in the first decompression section (3, 4) may be, for example, a vacuum exhaust line opening / closing mechanism such as a bellows valve, a diaphragm valve, etc. Furthermore, since the coating process is usually carried out at atmospheric pressure, the pump used in the first decompression section (3, 4) may be, for example, an exhaust mechanism capable of decompressing from atmospheric pressure, such as a roots pump, a diaphragm pump, or a screw pump.

[0021] As a valve used in the second decompression part (5, 6), a round gate valve with a wide opening can be applied to ensure conductance in a high vacuum. As a pump used in the second decompression part (5, 6), for example, a pump for decompressing the internal space SP1 of the chamber 1 to a pressure of 1×10 -4As a pump capable of reducing the pressure to below Pa, for example, a cryopump, a titanium sublimation pump, or the like can be used.

[0022] The substrate processing apparatus SPA may further include a pressure measuring unit 13 (pressure gauge) that measures the pressure in the internal space SP1 of the chamber 10. The pressure measuring unit 13 can measure the high vacuum pressure in the internal space SP1 of the chamber 10 from the atmospheric pressure in the external space. The pressure measuring unit 13 measures the pressure in the internal space SP1 and outputs an electrical signal indicating the measurement result to the control unit 8.

[0023] The substrate processing apparatus SPA may further include a desorption promoter 7 for desorbing organic solvents adhering to the wall surfaces of the chamber 1 or remaining in the internal space SP1 of the chamber 1. The desorption promoter 7 includes a gas supply unit 71, a purification unit 72, and a valve 73. The components of the desorption promoter 7 are connected by piping 75. The gas supply unit 71 includes a cylinder (not shown) that stores a gas that promotes desorption of the organic solvent, and a mass flow controller (not shown) that can control the supply flow rate and supply pressure of the gas. The mass flow controller supplies the gas with a controlled supply flow rate and supply pressure based on a control command from the control unit 8 (described later). In this embodiment, the gas that promotes desorption of the organic solvent may be any gas with a low concentration of moisture and organic solvent that does not condense and adhere to the wall surfaces of the chamber 1. For example, in addition to an inert gas such as nitrogen (N), oxygen (O), or ozone (O), which has oxidizing properties, may be used. In this embodiment, these gases that promote desorption of the organic solvent are collectively referred to simply as "gas."

[0024] The purifier 72 removes impurities such as moisture (H2O), oxygen (O2), and hydrocarbons from the gas supplied from the gas supply unit 71 and allows the gas from which the impurities have been removed to pass. By passing the gas through the purifier 72, the concentration of impurities contained in the gas is reduced, thereby increasing the purity of the gas. In this embodiment, the gas whose impurity concentration has been reduced by the purifier 72 is also referred to as an ultra-high purity gas (purified gas). The valve 73 is a valve for introducing the gas whose impurity concentration has been reduced by the purifier 72 (purified gas) into the internal space SP1 of the chamber 1. The opening and closing of the valve 73 is controlled by the controller 8, and when the valve 73 is opened, the gas whose impurity concentration has been reduced by the purifier 72 is introduced into the internal space SP1 of the chamber 1.

[0025] In the present embodiment, a configuration using the purification unit 72 to remove impurities from the gas supplied from the gas supply unit 71 has been described as an example. However, the present invention is not limited to this example, and a gas heating unit 74 (gas heater) capable of heating the gas can also be used instead of the purification unit 72. FIG. 4 is a diagram showing a configuration example in which the gas heating unit 74 (gas heater) is provided instead of the purification unit 72 in the configuration of the desorption promotion unit 7 in FIG. 1. The gas heating unit 74 heats the gas supplied from the gas supply unit 71 to volatilize impurities from the gas and output a highly pure gas (heated gas). Controlled by the control unit 8, the valve 73 opens, causing the impurities to be volatilized by heating with the gas heating unit 74, and the heated gas with a reduced impurity concentration is introduced into the internal space SP1 of the chamber 1.

[0026] The control unit 8 has one or more processors and a memory, and the processor executes a program stored in the memory to control various processes in the substrate processing apparatus SPA. Each process by the control unit 8 may be realized by dedicated hardware or by a combination of hardware and software.

[0027] The control unit 8 controls various components of the substrate processing apparatus SPA. For example, the control unit 8 can control the pressure reduction units (3 to 6) and the desorption promotion unit 7 based on the pressure of the internal space SP1 measured by the pressure measurement unit 13. The control unit 8 may control the first pressure reduction units (3, 4), the second pressure reduction units (5, 6), and the desorption promotion unit 7 based on the pressure of the internal space SP1 measured by the pressure measurement unit 13 to adjust the pressure inside the chamber 10 to a predetermined target pressure. The control unit 8 may operate the first pressure reduction units (3, 4) and the desorption promotion unit 7 to supply gas to the chamber 1 while the pressure reduction by the second pressure reduction units (5, 6) is stopped (the round gate valve 5 is closed).

[0028] Alternatively, the control unit 8 may stop the pressure reduction by the first pressure reduction unit (3, 4) (close the vacuum valve 3) and further stop the operation of the desorption promotion unit 7, and then operate the second pressure reduction unit (5, 6) to reduce the pressure inside the chamber 1.

[0029] Alternatively, the control unit 8 can control the operation of the desorption promotion unit 7 (gas supply unit 71, purification unit 72, gas heating unit 74, and valve 73) based on the pressure of the internal space SP1 measured by the pressure measurement unit 13, and control the supply of gas for desorbing the organic solvent remaining in the internal space SP1.

[0030] To perform high-quality drying using the substrate processing apparatus SPA, the vacuum valve 3 is opened, and the dry pump 4 is operated to remove most of the organic solvent from the internal space SP1 of the vacuum chamber 1 and the substrate 2, and then the vacuum valve 3 is closed to prevent the organic solvent from flowing back.

[0031] To further dry the substrate 2 in the internal space SP1, the round gate valve 5 is opened and the pressure in the internal space SP1 is further reduced by operating the turbomolecular pump 6. A high vacuum equivalent to the ultimate pressure when there is no substrate 2 in the internal space SP1 (for example, 3×10 -4Even if the target ultimate pressure is to reduce the pressure to around 100 Pa, if organic solvent adheres to the wall surfaces of the chamber 1, the target ultimate pressure may not be reached. Therefore, the control unit 8 controls the desorption promoter 7 to open the valve 73, and a gas with a reduced impurity concentration (ultra-high purity gas) is introduced from the valve 73 into the internal space SP1, thereby desorbing the organic solvent adhered to the wall surfaces of the chamber 1, etc.

[0032] Subsequently, the turbo molecular pump 6 is operated to evacuate the internal space SP1 through the round gate valve 5. By evacuating the internal space SP1 to a high vacuum, it is possible to prevent the residual organic solvent vapor from adhering again to the substrate 2, thereby enabling high-quality drying.

[0033] Fig. 2 is a flowchart showing the flow of a substrate processing method using the substrate processing apparatus SPA according to the embodiment, and Fig. 3 is a diagram showing an example of the progression of pressure control of the internal space SP1 in the substrate processing method of Fig. 2. Here, the pressure in the internal space SP1 of the chamber 1 shown in Fig. 3 is an example, and the technology disclosed in this embodiment is not limited to this example.

[0034] 2 can be controlled by the control unit 8. In step S101, the substrate 2 coated with an organic electronic material containing an organic solvent is loaded into the internal space SP1 of the chamber 1, and the substrate 2 is placed on the substrate holder 11 arranged in the internal space SP1.

[0035] In step S102, the control unit 8 controls and opens the vacuum valve 3, and the dry pump 4 reduces the pressure in the internal space SP1 of the chamber 1 to a first pressure (e.g., 10 Pa), thereby drying the organic solvent on the substrate 2 and removing most of the organic solvent from the substrate 2.

[0036] In step S103, the pressure in the internal space SP1 is measured by the pressure measurement unit 13, and the pressure measurement unit 13 outputs the measurement result to the control unit 8. In step S104, the control unit 8 determines whether the pressure has been reduced to the first pressure (10 Pa), and if it is determined that the pressure has not been reduced to the first pressure (S104-NO), the process returns to S102 and the same process is repeated. On the other hand, if it is determined in step S104 that the pressure in the internal space SP1 has been reduced to the first pressure (S104-YES), the process proceeds to step S105.

[0037] In step S105, the control unit 8 controls the vacuum valve 3 to close it, controls the round gate valve 5 to open it, and controls the turbo molecular pump 6 to pump the internal space SP1 of the chamber 1 to a second pressure (for example, 5×10 -3 The pressure is reduced to 100 Pa.

[0038] In step S106, the pressure in the internal space SP1 is measured by the pressure measuring unit 13, and the pressure measuring unit 13 outputs the measurement result to the control unit 8.

[0039] In step S107, the control unit 8 controls the second pressure (5×10 -3 If it is determined that the pressure in the internal space SP1 has not been reduced to the second pressure (S107-NO), the process returns to S105 and the same process is repeated. On the other hand, if it is determined in step S107 that the pressure in the internal space SP1 has been reduced to the second pressure (S107-YES), the process proceeds to step S108.

[0040] By continuing to evacuate the chamber 1 through the processes of steps S105 to S107, the organic solvent is gradually exhausted. However, as the organic solvent adhering to the wall surface of the chamber 1 volatilizes, the degree of vacuum in the internal space SP1 decreases, and the target pressure (for example, 3×10 -4 Pa) may not be reached.

[0041] Therefore, in step S108, the control unit 8 performs the first desorption process at a second pressure (5×10 -3In step S108, the control unit 8 controls the desorption promoter 7 to introduce an ultra-high purity gas (a highly purified gas with reduced impurities) into the internal space SP1 in order to exhaust and remove the organic solvent remaining in the internal space SP1. The control unit 8 also controls the round gate valve 5 to close it and the vacuum valve 3 to open it, thereby bringing the internal space SP1 of the chamber 1 into a pressure state of a third pressure (for example, 10 kPa). This pressure state is a state in which a large amount of ultra-high purity gas (purified gas) is introduced into the internal space SP1 from the desorption promoter 7, and is a pressure state higher than the first pressure and the second pressure.

[0042] As a second desorption process following the first desorption process, the control unit 8 operates the first pressure reduction unit (3, 4) and the desorption promotion unit 7 to supply gas (purified gas) to the chamber 1 until the pressure inside the chamber 1 reaches a third pressure that is lower than the external pressure (atmospheric pressure) of the chamber 1 and higher than the first pressure (10 Pa).

[0043] In step S109, the pressure state of the internal space SP1 is measured by the pressure measuring unit 13, which measures the pressure of the internal space SP1 and outputs an electric signal indicating the measurement result to the control unit 8. The control unit 8 can monitor the pressure of the internal space SP1 based on the measurement result of the pressure measuring unit 13.

[0044] The control unit 8 determines whether the pressure state of the internal space SP1 has reached a third pressure (10 kPa). If the control unit 8 determines that the pressure state of the internal space SP1 has not reached the third pressure (S109-NO), the control unit 8 returns the process to step S108 and controls the desorption promotion unit 7 to continue the process of introducing the ultra-high purity gas (purified gas) into the internal space SP1. On the other hand, if the control unit 8 determines in the determination of step S109 that the pressure state of the internal space SP1 has reached the third pressure (S109-YES), the control unit 8 proceeds to step S110.

[0045] In step S110, as a third desorption process following the second desorption process, after the third pressure (10 kPa) is reached, the control unit 8 stops the decompression by the first decompression unit (3, 4) and the operation of the desorption promotion unit 7, and operates the second decompression unit (5, 6) to decompress the inside of the chamber 1 to a second pressure (5×10 -3 A fourth pressure (e.g., 8 × 10 Pa) lower than -4 The pressure in the internal space SP1 is reduced to the third pressure (10 kPa). When a predetermined time (for example, T1) has elapsed after the pressure in the internal space SP1 reaches the third pressure (10 kPa), the control unit 8 controls the desorption promoter 7 to stop the supply of the ultra-high purity gas (purified gas). The control unit 8 also controls the vacuum valve 3 to close it, the round gate valve 5 to open it, and the turbo molecular pump 6 to reduce the internal space SP1 of the chamber 1 to the second pressure (5×10 -3 A fourth pressure (e.g., 8 x 10 Pa) is lower than the -4 The pressure is reduced to 100 Pa.

[0046] In step S111, the pressure state of the internal space SP1 is measured by the pressure measuring unit 13, which measures the pressure of the internal space SP1 and outputs an electric signal indicating the measurement result to the control unit 8. The control unit 8 can monitor the pressure of the internal space SP1 based on the measurement result of the pressure measuring unit 13.

[0047] The control unit 8 determines whether the pressure state of the internal space SP1 is a fourth pressure (8×10 -4 If the control unit 8 determines that the pressure state of the internal space SP1 has not reached the fourth pressure (S111-NO), the control unit 8 returns the process to step S110 and continues depressurizing the internal space SP1 of the chamber 1 by the turbomolecular pump 6. On the other hand, if the control unit 8 determines in the determination of step S111 that the pressure state of the internal space SP1 has reached the fourth pressure (S111-YES), the control unit 8 proceeds to step S112.

[0048] In step S112, the pressure state of the internal space SP1 is measured by the pressure measuring unit 13, and the control unit 8 monitors the pressure of the internal space SP1 based on the measurement result of the pressure measuring unit 13. The control unit 8 determines whether or not the fourth pressure (8×10) is reached within a predetermined time (for example, T2) from the start of supply of the ultra-high purity gas (purified gas) by the desorption promoting unit 7 (YES in S107, S108). -4 A target pressure (e.g., 3 x 10 Pa) lower than -4 The control unit 8 determines whether the target pressure (3×10 Pa) has been reached within a predetermined time (T2) from the start of supply of the purified gas. -4 If it is determined that the temperature has not reached Pa (S112-NO), the process returns to step S108, and the same process is repeated. Steps S108 to S112 constitute one cycle, and the processes of steps S108 to S112 are performed again.

[0049] If the pressure is not reduced to a target pressure lower than the fourth pressure within a predetermined time from the start of supply of the gas (purified gas), the control unit 8 controls the first decompression unit (3, 4), the second decompression unit (5, 6), and the desorption promotion unit 7 to perform repeated processes of the first desorption process, the second desorption process, and the third desorption process.

[0050] By performing the processes of steps S108 to S112 again, the organic solvent in the internal space SP1 is exhausted and the degree of vacuum in the internal space SP1 can be increased. For example, -4 This allows the pressure to be reduced to a high vacuum of 100 Pa, enabling a high-quality drying process with little residual organic solvent. The number of times the process is repeated may be set in advance, but the number of times the process cycle of steps S108 to S112 is repeated may also be increased as long as productivity is not impaired.

[0051] On the other hand, if it is determined in step S112 that the target pressure has been reached within the predetermined time (T2) since the start of supply of purified gas (S112-YES), the control unit 8 advances the process to step S113.

[0052] In step S113, the control unit 8 may control the round gate valve 5 to open it, and continue the operation of the turbo molecular pump 6 to maintain the evacuation state.

[0053] Thereafter, in step S114, the control unit 8 purges the chamber 1 to return it to atmospheric pressure and introduces an inert gas into the chamber 1. Then, the substrate 2 held by the substrate holder 11 is unloaded into the space outside the chamber 1.

[0054] According to this embodiment, it is possible to provide an advantageous technique for preventing the organic solvent from re-adhering to the substrate and obtaining a higher quality organic electronic material.

[0055] By reducing the amount of organic solvent remaining in the vacuum chamber, it is possible to prevent a decrease in the degree of vacuum even when the substrate drying process is repeated, which also improves variation between substrates when drying multiple substrates.

[0056] (Variation 1) Fig. 5 is a schematic cross-sectional view showing the configuration of the substrate processing apparatus SPA of Modification 1. The basic configuration of the substrate processing apparatus SPA is the same as that of the substrate processing apparatus SPA described in Fig. 1, except that the substrate processing apparatus SPA of Modification 1 (Fig. 5) differs in that the desorption promotion unit 7 has a gas heating unit 74 (gas heater) connected between the purification unit 72 and the valve 73. The flow of the substrate processing method using the substrate processing apparatus of Modification 1 is the same as the process described in Fig. 2.

[0057] In the substrate processing apparatus SPA of the first modification, the purification unit 72 removes impurities such as moisture (H2O), oxygen (O2), and hydrocarbons from the gas supplied from the gas supply unit 71 and passes the gas from which the impurities have been removed. The gas (purified gas) from which the concentration of impurities has been reduced by the purification unit 72 is supplied to the gas heating unit 74.

[0058] The gas heating unit 74 heats the gas (purified gas) from which impurities have been removed by the purifying unit 72, thereby volatilizing the impurities contained in the purified gas and outputting a highly pure gas (heated gas) with a further reduced impurity concentration. The valve 73 is opened under the control of the control unit 8, and the impurities are volatilized by heating in the gas heating unit 74, and the gas (heated gas) with a further reduced impurity concentration is introduced into the internal space SP1 of the chamber 1. According to the configuration of the first modified example, the purifying unit 72 and the gas heating unit 74 have different mechanisms for promoting desorption of organic solvents. Using both units makes it possible to introduce a gas with a higher purity into the internal space SP1 of the chamber 1, thereby improving the desorption promotion effect.

[0059] (Variation 2) Fig. 6 is a schematic cross-sectional view showing the configuration of the substrate processing apparatus SPA of Modification 2. The basic configuration of the substrate processing apparatus SPA is the same as that of the substrate processing apparatus SPA described in Fig. 1, but the substrate processing apparatus SPA of Modification 2 (Fig. 6) differs in that the desorption promotion unit 7 has a gas heating unit 74, a switching valve 76 (switching unit), a heating gas supply pipe 77, and a purification gas supply pipe 78 connected between the purification unit 72 and the valve 73. Here, the heating gas supply pipe 77 and the purification gas supply pipe 78 are pipes branched into two from the pipe 75.

[0060] The heated gas supply pipe 77 is a pipe for supplying the heated gas output from the gas heating unit 74 to the chamber 1. The purified gas supply pipe 78 is a pipe for supplying the purified gas output from the purification unit 72 to the chamber 1, bypassing the gas heating unit 74.

[0061] The switching valve 76 (switching unit) is a valve that can be opened and closed under the control of the control unit 8, and opening and closing the valve can switch between the heating gas supply pipe 77 and the purification gas supply pipe 78. Also, Fig. 7 is a diagram showing the flow of a substrate processing method using the substrate processing apparatus SPA of the second modification.

[0062] When the switching valve 76 is opened under the control of the control unit 8, the gas (purified gas) in which the concentration of impurities contained in the gas has been reduced by the purifier 72 is supplied to the gas heater 74.

[0063] The gas heating unit 74 heats the gas (purified gas) from which impurities have been removed by the purification unit 72, thereby volatilizing the impurities contained in the purified gas from the gas (purified gas) and outputting a highly pure gas (heated gas) with a further reduced impurity concentration. When the valve 73 is opened under the control of the control unit 8, the impurities are volatilized by heating in the gas heating unit 74, and the gas (heated gas) with a further reduced impurity concentration is introduced into the internal space SP1 of the chamber 1.

[0064] On the other hand, when the switching valve 76 is closed under the control of the control unit 8, the gas from which impurities have been removed by the purifier 72 (purified gas) is supplied to the valve 73, bypassing the gas heater 74. When the valve 73 is opened under the control of the control unit 8, the gas (purified gas) from which the concentration of impurities contained in the gas has been reduced by the purifier 72 is introduced into the internal space SP1 of the chamber 1.

[0065] The opening and closing of the switching valve 76 under the control of the control unit 8 may be switched based on the pressure state of the internal space SP1 of the chamber 1. For example, in the process of FIG. 7, when the process cycle of steps S108 to S112 is not repeated (S112-YES), the control unit 8 controls to close the switching valve 76, bypassing the gas heating unit 74 and supplying the gas (purified gas) whose impurity concentration has been reduced by the purifying unit 72 to the valve 73.

[0066] Then, when the process cycle of steps S108 to S112 is repeated, that is, when the target pressure (3×10 -4 If it is determined that the temperature has not reached Pa (S112-NO), the process may proceed to step S115 shown in FIG.

[0067] In step S115, the control unit 8 controls the switching valve 76 to open, and the gas (purified gas) in which the concentration of impurities has been reduced by the purifier 72 is supplied to the gas heater 74.

[0068] The gas heating unit 74 heats the gas (purified gas) from which impurities have been removed by the purifying unit 72, thereby volatilizing the impurities contained in the purified gas and outputting a gas (heated gas) with even higher purity. The valve 73 is opened under the control of the control unit 8, whereby the impurities are volatilized by heating in the gas heating unit 74, and the gas (heated gas) with an even lower impurity concentration is introduced into the internal space SP1 of the chamber 1. After the process of step S115, the process returns to step S108, and the process cycle of steps S108 to S112 is repeated. According to the second modification, it is possible to switch between the heated gas and the purified gas as the gas supplied to the chamber 1 based on the pressure state of the internal space SP1 of the chamber 1. The purifying unit 72 and the gas heating unit 74 have different mechanisms for promoting desorption of organic solvents. Using both units allows for the introduction of a gas with even higher purity into the internal space SP1 of the chamber 1, thereby improving the desorption promotion effect.

[0069] (Embodiment of manufacturing method of article) The method for manufacturing an article (electronic device) according to the embodiment can be applied to manufacturing an article such as an organic light-emitting diode (OLED) panel using an inkjet printing device, a slit coater, etc. The method for manufacturing an article according to the embodiment includes a step (coating step) of obtaining a coated substrate by arranging or coating a solution film on a substrate by a coating method using an inkjet printing device, a slit coater, etc.

[0070] The method also includes a step (drying step) of drying the solution film on the coated substrate using the substrate processing apparatus SPA to obtain a dried substrate on which a dry film has been formed. Furthermore, this manufacturing method also includes other well-known steps (baking, cooling, dehumidification, dry cleaning, electrode formation, sealing film formation, etc.). The method for manufacturing an article of this embodiment is advantageous over conventional methods in at least one of the performance, quality, productivity, and production cost of the article.

[0071] (Summary of the embodiment) [Item 1] A substrate processing apparatus that dries a film coated on a substrate, a first pressure reducing unit capable of reducing the pressure inside the chamber to a first pressure; a second pressure reducing unit capable of reducing the pressure inside the chamber to a pressure lower than the first pressure; a desorption promoter that supplies a gas that promotes desorption of the solvent from the film to the chamber that has been depressurized to a second pressure that is lower than the first pressure; A substrate processing apparatus comprising: [Item 2] The apparatus further includes a control unit that controls the first pressure reducing unit, the second pressure reducing unit, and the desorption promoting unit based on the pressure measured by a measuring unit that measures the pressure inside the chamber. 2. The substrate processing apparatus according to item 1, [Item 3] The substrate processing apparatus according to Item 2, wherein the control unit operates the first decompression unit and the desorption promotion unit while the decompression by the second decompression unit is stopped, to supply the gas to the chamber. [Item 4] The substrate processing apparatus according to Item 2 or 3, characterized in that the control unit operates the second decompression unit while stopping the first decompression unit and the desorption promotion unit, thereby reducing the pressure inside the chamber. [Item 5] The control unit performs the first desorption process by: In a state where the pressure is reduced to the second pressure, the pressure reduction by the second pressure reduction unit is stopped, 3. The substrate processing apparatus according to item 2, wherein the first pressure reducing unit and the desorption promoting unit are operated to supply the gas to the chamber. [Item 6] The control unit performs, as a second desorption process after the first desorption process, The first pressure reducing unit and the desorption promoting unit are operated to supply the gas to the chamber until the inside of the chamber reaches a third pressure that is lower than the pressure outside the chamber and higher than the first pressure. 6. The substrate processing apparatus according to item 5, [Item 7] The control unit performs a third desorption process after the second desorption process, After the third pressure is reached, the decompression by the first decompression unit and the operation of the desorption promotion unit are stopped, 7. The substrate processing apparatus according to item 6, wherein the second decompression unit is operated to decompress the inside of the chamber to a fourth pressure lower than the second pressure. [Item 8] The control unit determines whether the pressure of the gas is not reduced to a target pressure that is lower than the fourth pressure within a predetermined time from the start of supply of the gas. 8. The substrate processing apparatus according to item 7, wherein the first decompression unit, the second decompression unit, and the desorption promotion unit are controlled so as to repeatedly perform the first desorption process, the second desorption process, and the third desorption process. [Item 9] The detachment promoter is a supply unit that supplies the gas that promotes desorption of the solvent; a purification unit that removes impurities contained in the gas supplied from the supply unit and outputs purified gas in which the concentration of the impurities is reduced, 3. The substrate processing apparatus according to item 2, wherein the control unit controls the desorption promoter unit to supply the purification gas to the chamber. [Item 10] The detachment promoter is a supply unit that supplies a gas that promotes desorption of the solvent; a heating unit that heats the gas supplied from the supply unit to volatilize impurities from the gas and output heated gas in which the concentration of the impurities has been reduced, 3. The substrate processing apparatus according to item 2, wherein the control unit controls the desorption promoter to supply the heated gas to the chamber. [Item 11] The detachment promoter is a supply unit that supplies a gas that promotes desorption of the solvent; a purification unit that removes impurities contained in the gas supplied from the supply unit and outputs purified gas having a reduced concentration of the impurities; a heating unit that heats the purified gas to volatilize impurities contained in the purified gas and outputs a heated gas in which the concentration of the impurities is further reduced compared to the purified gas, 3. The substrate processing apparatus according to item 2, wherein the control unit controls the desorption promoter to supply the heated gas to the chamber. [Item 12] The detachment promoter is a supply unit that supplies a gas that promotes desorption of the solvent; a purification unit that removes impurities contained in the gas supplied from the supply unit and outputs purified gas having a reduced concentration of the impurities; a heating unit that heats the purified gas to volatilize impurities contained in the purified gas and outputs a heated gas having a concentration of the impurities further reduced compared to the purified gas; a heating gas supply pipe for supplying the heating gas to the chamber; a purification gas supply pipe that supplies the purification gas to the chamber while bypassing the heating unit; a switching unit that switches between the heating gas supply pipe and the purified gas supply pipe based on the control of the control unit; 9. The substrate processing apparatus according to item 8, comprising: [Item 13] The substrate processing apparatus described in Item 12, characterized in that when the repeating process is not performed, the control unit controls the switching unit to supply the purification gas from the purification gas supply pipe to the chamber. [Item 14] The substrate processing apparatus described in Item 12, characterized in that when the repeated processing is performed, the control unit controls the switching unit to supply the heated gas from the heated gas supply pipe to the chamber. [Item 15] The substrate processing apparatus according to any one of Items 9 to 14, wherein the gas supplied by the supply unit includes an inert gas, oxygen, or ozone. [Item 16] A substrate processing method for a substrate processing apparatus that dries a film coated on a substrate, comprising: a first depressurization step in which the inside of the chamber can be depressurized to a first pressure by a first depressurization unit; a second depressurization step of depressurizing the inside of the chamber to a pressure lower than the first pressure by a second depressurization unit; a desorption promotion step in which a desorption promotion unit supplies a gas that promotes desorption of the solvent from the film to the chamber, which has been depressurized to a second pressure lower than the first pressure; A substrate processing method comprising: [Item 17] A method for manufacturing an article, comprising a step of drying a film coated on a substrate using the substrate processing apparatus according to any one of items 1 to 15.

[0072] The invention is not limited to the above-described embodiments, and various changes and modifications can be made without departing from the spirit and scope of the invention. Accordingly, the following claims are appended to apprise the public of the scope of the invention. [Explanation of symbols]

[0073] 1: Vacuum chamber, 2: Substrate, 3: Vacuum valve, 4: Dry pump, 5: Round gate valve (gate valve), 6: Turbo molecular pump, 7: Desorption promoting unit, 8: Control unit, 11: Substrate holding unit (stage), 12: Gate valve, 13: Pressure measurement unit, 71: Gas supply unit, 72: Purification section, 73: Valve, 74: Gas heating section, 75: Piping, 76: Switching valve, 77: Heating gas supply pipe, 78: Purified gas supply pipe

Claims

1. A substrate processing apparatus that dries a film coated on a substrate, a first pressure reducing unit capable of reducing the pressure inside the chamber to a first pressure; a second pressure reducing unit capable of reducing the pressure inside the chamber to a pressure lower than the first pressure; a desorption promoter that supplies a gas that promotes desorption of the solvent from the film to the chamber that has been depressurized to a second pressure that is lower than the first pressure; A substrate processing apparatus comprising:

2. a control unit that controls the first pressure reducing unit, the second pressure reducing unit, and the desorption promoting unit based on the pressure measured by a measuring unit that measures the pressure inside the chamber. The substrate processing apparatus according to claim 1 .

3. 3. The substrate processing apparatus according to claim 2, wherein the control unit operates the first decompression unit and the desorption promotion unit to supply the gas to the chamber while the decompression by the second decompression unit is stopped.

4. 3. The substrate processing apparatus according to claim 2, wherein the control unit operates the second decompression unit to decompress the inside of the chamber while stopping the first decompression unit and the desorption promotion unit.

5. As a first desorption process, the control unit In a state where the pressure is reduced to the second pressure, the decompression by the second decompression unit is stopped, 3. The substrate processing apparatus according to claim 2, wherein the gas is supplied to the chamber by operating the first pressure reducing unit and the desorption promoting unit.

6. The control unit performs, as a second desorption process after the first desorption process, The first pressure reducing unit and the desorption promoting unit are operated to supply the gas to the chamber until the inside of the chamber reaches a third pressure that is lower than the pressure outside the chamber and higher than the first pressure. The substrate processing apparatus according to claim 5 .

7. The control unit, as a third desorption process after the second desorption process, After the third pressure is reached, the decompression by the first decompression unit and the operation of the desorption promotion unit are stopped, 7. The substrate processing apparatus according to claim 6, wherein the second pressure reducing unit is operated to reduce the pressure inside the chamber to a fourth pressure lower than the second pressure.

8. the control unit determines whether the pressure of the gas is not reduced to a target pressure that is lower than the fourth pressure within a predetermined time from the start of supply of the gas, 8. The substrate processing apparatus according to claim 7, wherein the first decompression unit, the second decompression unit, and the desorption promotion unit are controlled so as to repeatedly perform the first desorption process, the second desorption process, and the third desorption process.

9. The detachment promoting part is a supply unit that supplies the gas that promotes desorption of the solvent; a purification unit that removes impurities contained in the gas supplied from the supply unit and outputs purified gas in which the concentration of the impurities is reduced, 3. The substrate processing apparatus according to claim 2, wherein the control unit controls the desorption promoter unit to supply the purification gas to the chamber.

10. The detachment promoting part is a supply unit that supplies a gas that promotes desorption of the solvent; a heating unit that heats the gas supplied from the supply unit to volatilize impurities from the gas and output heated gas in which the concentration of the impurities has been reduced, 3. The substrate processing apparatus according to claim 2, wherein the control unit controls the desorption promoter unit to supply the heated gas to the chamber.

11. The detachment promoting part is a supply unit that supplies a gas that promotes desorption of the solvent; a purification unit that removes impurities contained in the gas supplied from the supply unit and outputs purified gas having a reduced concentration of the impurities; a heating unit that heats the purified gas to volatilize impurities contained in the purified gas and outputs a heated gas in which the concentration of the impurities is further reduced compared to the purified gas, 3. The substrate processing apparatus according to claim 2, wherein the control unit controls the desorption promoter unit to supply the heated gas to the chamber.

12. The detachment promoting part is a supply unit that supplies a gas that promotes desorption of the solvent; a purification unit that removes impurities contained in the gas supplied from the supply unit and outputs purified gas having a reduced concentration of the impurities; a heating unit that heats the purified gas to volatilize impurities contained in the purified gas and outputs a heated gas having a concentration of the impurities further reduced compared to the purified gas; a heating gas supply pipe for supplying the heating gas to the chamber; a purification gas supply pipe that supplies the purification gas to the chamber while bypassing the heating unit; a switching unit that switches between the heating gas supply pipe and the purified gas supply pipe based on the control of the control unit; 9. The substrate processing apparatus according to claim 8, further comprising:

13. 13. The substrate processing apparatus according to claim 12, wherein, when the repetitive processing is not performed, the control unit controls the switching unit to supply the purification gas from the purification gas supply pipe to the chamber.

14. 13. The substrate processing apparatus according to claim 12, wherein, in the case of performing the repeated processing, the control unit controls the switching unit to supply the heating gas from the heating gas supply pipe to the chamber.

15. 10. The substrate processing apparatus according to claim 9, wherein the gas supplied by the supply unit includes an inert gas, oxygen, or ozone.

16. A substrate processing method for a substrate processing apparatus that dries a film coated on a substrate, comprising: a first depressurization step in which the inside of the chamber can be depressurized to a first pressure by a first depressurization unit; a second depressurization step of depressurizing the inside of the chamber to a pressure lower than the first pressure by a second depressurization unit; a desorption promotion step in which a desorption promotion unit supplies a gas that promotes desorption of the solvent from the film to the chamber, which has been depressurized to a second pressure lower than the first pressure; A substrate processing method comprising:

17. A method for manufacturing an article, comprising the step of drying a film coated on a substrate using the substrate processing apparatus according to claim 1 .

Images