Semiconductor device and method of manufacturing semiconductor device

Abstract

To provide technique capable of preventing mold resin from flowing in between a die pad and an insulation sheet in a molding process.SOLUTION: A semiconductor device comprises: a die pad 1a having a top surface and a reverse surface; a power chip 7 joined to the top surface of the die pad 1a; an insulation sheet 2 joined to the reverse surface of the die pad 1a; a terminal 1c connected to the die pad 1a and extending horizontally; an arm 9 which is connected to the die pad 1a and located above the top surface, and can be pressed with a pin 10 provided in an upper mold; and molding resin 8 which seals the die pad 1a, the arm 9, the power chip 7, and the insulation sheet 2 such that the surface of the insulation sheet 2 on the opposite side from the surface on the side of the die pad 1a is exposed. The molding resin 8 has a hollow 8a, into which the pin 10 can be inserted, at a position where it overlaps the arm 9 in top view.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present disclosure relates to a semiconductor device and a method for manufacturing the semiconductor device. [Background technology]

[0002] Conventionally, in a molding device, which is a type of semiconductor manufacturing equipment, molding resin is injected during the molding process to perform the sealing work. If there is a gap between the underside of the die pad and the contact surface of the lower mold that constitutes the lower part of the molding die during the molding process, the molding resin will seep in through the gap, causing a problem of resin burrs on the underside of the die pad.

[0003] To solve this problem, for example, Patent Document 1 describes a method of preventing molding resin from flowing into the sealing prohibited area located in the center of the back surface of the die pad by providing a protrusion on the outer periphery of the back surface of the die pad. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Laid-Open No. 2018-56310 Summary of the Invention [Problem to be solved by the invention]

[0005] However, when the technology described in Patent Document 1 is employed in a method for manufacturing a semiconductor device having a structure in which an insulating sheet is bonded to the underside of a die pad, there is a problem in that the molding resin flows between the die pad and the insulating sheet depending on the molding resin injection conditions.

[0006] Therefore, an object of the present disclosure is to provide a technique capable of preventing molding resin from flowing between the die pad and the insulating sheet during the molding process. [Means for solving the problem]

[0007] The semiconductor device according to the present disclosure is a semiconductor device molded in a molding die consisting of an upper mold and a lower mold, and includes: a die pad having a first main surface and a second main surface opposite the first main surface; a semiconductor element bonded to the first main surface of the die pad; an insulating sheet bonded to the second main surface of the die pad; a terminal connected to the die pad and extending laterally; a die pad pressing portion connected to the die pad, located above the first main surface, and capable of being pressed by a pin provided in the upper mold; and a molding resin that seals the die pad, the die pad pressing portion, the semiconductor element, and the insulating sheet so that the surface of the insulating sheet opposite to the surface facing the die pad is exposed, and the molding resin has a recess into which the pin can be inserted at a position that overlaps with the die pad pressing portion when viewed from above. [Effects of the Invention]

[0008] According to the present disclosure, during the molding process, the die pad can be pressed toward the insulating sheet by pressing the die pad pressing portion with a pin provided in the upper mold, thereby improving the adhesion between the die pad and the insulating sheet, and preventing the molding resin from flowing between the die pad and the insulating sheet during the molding process. [Brief explanation of the drawings]

[0009] [Figure 1] 1 is a cross-sectional view of a semiconductor device according to a first embodiment. [Figure 2] FIG. 2 is a top view of the lead frame before the molding step in the first embodiment. [Figure 3] FIG. 2 is a perspective view of a lead frame before a molding process in the first embodiment. [Figure 4] FIG. 10 is a top view of a lead frame before a molding process in a modification of the first embodiment. [Figure 5] FIG. 10 is a perspective view of a lead frame before a molding process in a modification of the first embodiment. [Figure 6]3 is a flowchart showing a method for manufacturing the semiconductor device according to the first embodiment. [Figure 7] FIG. 11 is a top view of a lead frame before a molding process in the second embodiment. [Figure 8] FIG. 11 is a perspective view of a lead frame before a molding process in the second embodiment. [Figure 9] 10 is a flowchart showing a method for manufacturing a semiconductor device according to a second embodiment. [Figure 10] FIG. 11 is a top view of a lead frame before a molding process in the third embodiment. [Figure 11] FIG. 11 is a perspective view of a lead frame before a molding process in the third embodiment. [Figure 12] 10 is a flowchart showing a method for manufacturing a semiconductor device according to a third embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0010] <First Embodiment> The first embodiment will be described below with reference to the drawings. FIG. 1 is a cross-sectional view of a semiconductor device according to the first embodiment. FIG. 2 is a top view of a lead frame 1 before a molding process in the first embodiment. FIG. 3 is a perspective view of the lead frame 1 before a molding process in the first embodiment. Note that FIG. 3 shows only a die pad 1a and its surroundings. This also applies to the subsequent perspective views.

[0011] As shown in FIG. 1, the semiconductor device includes a die pad 1a, a power chip 7 as a semiconductor element, a control IC (Integrated Circuit) 5, an insulating sheet 2, a terminal 1c, an arm 9 as a die pad pressing portion, a wire 6, and a molded resin 8.

[0012] 1 to 3, the die pad 1a has an upper surface (first main surface) and a lower surface (second main surface) opposite the upper surface. The terminal 1c is connected to the die pad 1a via a step 1b and extends in the lateral direction. The die pad 1a, the step 1b, and the terminal 1c are included in the lead frame 1.

[0013] As shown in FIG. 1, the power chip 7 is bonded to the upper surface of the die pad 1a via a bonding material 4. The power chip 7 is, for example, an insulated gate bipolar transistor (IGBT), a metal oxide semiconductor field effect transistor (MOSFET), or a reverse-conducting IGBT (RC-IGBT) in which an IGBT and a freewheeling diode are formed on a single semiconductor substrate. The control IC 5 is an element for controlling the power chip 7, and is bonded to the upper surface of the terminal 1c via the bonding material 4. Note that the control IC 5 is not shown in FIGS. 2 and 3. This also applies to the subsequent top views and perspective views.

[0014] One end of the wire 6 is connected to the control IC 5, and the other end is connected to an electrode pad on the power chip 7. Another wire 6 connects the electrode pad on the power chip 7 to the terminal 1c. Yet another wire 6 connects the control IC 5 to the terminal 1c.

[0015] The insulating sheet 2 is composed of an insulating layer 2b and a heat sink 2a provided on the lower surface of the insulating layer 2b, and is bonded to the lower surface of the die pad 1a.

[0016] Next, we will explain the arm 9, which is a feature of the semiconductor device according to the first embodiment. The semiconductor device is molded in a molding die (not shown) consisting of an upper die and a lower die. In order to ensure the dielectric strength of the semiconductor device, it is necessary to apply the pressure of the molding resin 8 injected into the molding die to the insulating sheet 2 via the underside of the die pad 1a. The arm 9 is used for this purpose, and when the lead frame 1 is clamped between the upper and lower dies during the molding process, the arm 9 is pressed downward by a pin 10 mounted on the upper die, thereby tightly adhering the die pad 1a to the insulating sheet 2.

[0017] 1 to 3, arm 9 is connected to die pad 1a and extends upward from the upper surface of die pad 1a so as to be located above the upper surface of die pad 1a. The upper end of arm 9 is bent horizontally and can be pressed down by pin 10 provided in the upper mold. By pressing down the upper end of arm 9 with pin 10 during the molding process, die pad 1a can be pressed down towards insulating sheet 2.

[0018] The molded resin 8 seals the die pad 1a, arm 9, power chip 7, control IC 5, and insulating sheet 2 so that the surface of the insulating sheet 2 opposite to the surface facing the die pad 1a, i.e., the bottom surface, is exposed. The molded resin 8 has a recess 8a into which the pin 10 can be inserted at a position overlapping with the arm 9 in a top view. Because the pin 10 protrudes downward during the molding process, a recess 8a having the same shape as the pin 10 is formed after the molding process. The upper end of the arm 9 is exposed from the molded resin 8 through the recess 8a.

[0019] The arm 9 may be provided integrally with the die pad 1a, or may be joined to the die pad 1a with a joining material such as solder. Although the recess 8a has been described as being large enough to expose the upper end of the arm 9, the depth of the recess 8a is not limited to this. For example, the recess 8a may be deep enough so that the arm 9 is not exposed. The depth of the recess 8a can be adjusted by the timing at which the pin 10 is pulled out while the mold resin 8 is hardening.

[0020] Next, the position of the arms 9 relative to the die pad 1a will be described. As shown in Figures 2 and 3, two arms 9 are provided, and the two arms 9 are located on diagonal lines of the die pad 1a when viewed from above. One of the two arms 9 is located between the power chip 7 and the terminal 1c when viewed from above. By positioning the two arms 9 on diagonal lines of the die pad 1a when viewed from above, the entire surface of the die pad 1a can be pressed.

[0021] Although the two arms 9 are provided at the upper left and lower right of the die pad 1a in FIGS. 2 and 3, they may be provided at the upper right and lower left.

[0022] Next, a modification of the first embodiment will be described. Fig. 4 is a top view of the lead frame 1 before the molding process in the modification of the first embodiment. Fig. 5 is a perspective view of the lead frame 1 before the molding process in the modification of the first embodiment.

[0023] 4 and 5, the arm 9 is located on the side of the die pad 1a opposite to the side to which the terminal 1c is connected in top view. More specifically, the arm 9 is located in the center of the side of the die pad 1a opposite to the side to which the terminal 1c is connected in top view. This configuration makes it possible to press the die pad 1a over the entire surface and to reduce the number of arms 9 and pins 10 compared to the cases of FIGS. 2 and 3.

[0024] Next, a method for manufacturing the semiconductor device according to the first embodiment will be described with reference to Figures 1 to 3 and 6. Figure 6 is a flowchart showing the method for manufacturing the semiconductor device according to the first embodiment.

[0025] First, in a preparation step, a lead frame 1 is prepared (step S1). Next, in a first lead frame processing step, the lead frame 1 is pressed using a molding die consisting of an upper die and a lower die to form a die pad 1a, a frame portion 1d surrounding the die pad 1a, and arms 9 (step S2). In a bonding step, a power chip 7 is bonded to the upper surface of the die pad 1a, and an insulating sheet 2 is bonded to the lower surface of the die pad 1a (step S3). A control IC 5 is also bonded to the terminal 1c.

[0026] Next, in the molding process, with the upper end of the arm 9 pressed by a pin 10 provided in the upper mold, the die pad 1a, arm 9, power chip 7, control IC 5, and insulating sheet 2 are sealed with molding resin 8 so that the underside of the insulating sheet 2 is exposed (step S4).

[0027] Finally, although not shown, excess portions of the lead frame 1 are cut off by press working, thereby completing the semiconductor device shown in FIG.

[0028] As described above, in the first embodiment, the semiconductor device includes die pad 1a having an upper surface and a lower surface, power chip 7 bonded to the upper surface of die pad 1a, insulating sheet 2 bonded to the lower surface of die pad 1a, terminal 1c connected to die pad 1a and extending laterally, arm 9 connected to die pad 1a and positioned above the upper surface, and capable of being pressed by pin 10 provided in an upper mold, and molded resin 8 that seals die pad 1a, arm 9, power chip 7, and insulating sheet 2 so that the surface of insulating sheet 2 opposite to the surface facing die pad 1a is exposed. Molded resin 8 has recess 8a into which pin 10 can be inserted at a position overlapping arm 9 in a top view.

[0029] Therefore, by pressing the arm 9 with the pin 10 provided in the upper mold during the molding process, the die pad 1a can be pressed toward the insulating sheet 2. This improves the adhesion between the die pad 1a and the insulating sheet 2, making it possible to prevent the molding resin 8 from flowing between the die pad 1a and the insulating sheet 2 during the molding process. This is expected to improve the yield and quality of the semiconductor device.

[0030] The semiconductor device also has two arms 9, which are positioned diagonally across the die pad 1a when viewed from above. This allows the die pad 1a to be pressed over its entire surface, improving adhesion between the die pad 1a and the insulating sheet 2 over the entire surface.

[0031] 2 and 3, the arms 9 are located on the side of the die pad 1a opposite to the side to which the terminals 1c are connected. This allows the die pad 1a to be held down over its entire surface, and the number of arms 9 and pins 10 can be reduced compared to the cases of FIGS.

[0032] <Embodiment 2> Next, a semiconductor device according to a second embodiment will be described. Fig. 7 is a top view of the lead frame 1 before the molding process in the second embodiment. Fig. 8 is a perspective view of the lead frame 1 before the molding process in the second embodiment. In the second embodiment, the same components as those described in the first embodiment are designated by the same reference numerals, and the description thereof will be omitted.

[0033] 7 and 8, in the second embodiment, a bridge 11 is provided instead of the arm 9. The bridge 11 connects the die pad 1a to the frame portion 1d so that the die pad 1a does not float when the molding resin 8 is injected in the molding process. Specifically, the bridge 11 connects the die pad 1a adjacent to the frame portion 1d among the multiple die pads 1a to the frame portion 1d.

[0034] The die pad 1a is positioned in the injection direction of the molding resin 8 relative to the frame portion 1d. In other words, the die pad 1a is positioned below the frame portion 1d. Therefore, the bridge 11 connecting the die pad 1a and the frame portion 1d has a step. When the molding resin 8 is injected in the molding process, the bridge 11 prevents the die pad 1a from floating, so that the molding pressure is appropriately applied to the insulating sheet 2.

[0035] Next, a method for manufacturing a semiconductor device according to the second embodiment will be described with reference to Figures 7 to 9. Figure 9 is a flowchart showing the method for manufacturing a semiconductor device according to the second embodiment.

[0036] First, in a preparation step, a lead frame 1 is prepared (step S11). Next, in a first lead frame processing step, the lead frame 1 is pressed using a molding die consisting of an upper die and a lower die to form a die pad 1a, a frame portion 1d located above the upper surface of the die pad 1a and surrounding the die pad 1a, and a bridge 11 having a step that connects the die pad 1a and the frame portion 1d (step S12). In a bonding step, a power chip 7 is bonded to the upper surface of the die pad 1a, and an insulating sheet 2 is bonded to the lower surface of the die pad 1a (step S13). A control IC 5 is also bonded to the terminal 1c.

[0037] Next, in a molding process, the die pad 1a, bridge 11, power chip 7, control IC 5 (see FIG. 1), and insulating sheet 2 are sealed with molding resin 8 so that the lower surface of insulating sheet 2 is exposed (step S14).

[0038] Finally, in the second lead frame processing step, the excess portion of the lead frame 1 including the bridge 11 is cut off by press processing (step S15), thereby completing the semiconductor device.

[0039] As described above, in the second embodiment, the bridge 11 prevents the die pad 1a from floating when the molding resin 8 is injected in the molding process, and therefore the molding pressure is appropriately applied to the insulating sheet 2. This improves the adhesion between the die pad 1a and the insulating sheet 2, and prevents the molding resin 8 from flowing between the die pad 1a and the insulating sheet 2 during the molding process. This is expected to improve the yield and quality of the semiconductor device.

[0040] <Third Embodiment> Next, a semiconductor device according to a third embodiment will be described. Fig. 10 is a top view of the lead frame 1 before the molding process in the third embodiment. Fig. 11 is a perspective view of the lead frame 1 before the molding process in the third embodiment. In the third embodiment, the same components as those described in the first and second embodiments are designated by the same reference numerals, and the description thereof will be omitted.

[0041] As shown in FIGS. 10 and 11, in the third embodiment, a bridge 11 is provided in addition to an arm 9. The bridge 11 connects the die pad 1a, among the plurality of die pads 1a, that is adjacent to the frame portion 1d to the frame portion 1d. The arm 9 is provided on the die pad 1a, among the plurality of die pads 1a, that is not provided with the bridge 11. In other words, the arm 9 is provided on the die pad 1a, among the plurality of die pads 1a, that is not adjacent to the frame portion 1d. Furthermore, two arms 9 are provided on each die pad 1a.

[0042] As in the first embodiment, two arms 9 may be positioned diagonally across the die pad 1a when viewed from above, or one arm 9 may be positioned on the opposite side of the die pad 1a from the side to which the terminal 1c is connected when viewed from above.

[0043] Next, a method for manufacturing a semiconductor device according to the third embodiment will be described with reference to Figures 10 to 12. Figure 12 is a flowchart showing the method for manufacturing a semiconductor device according to the third embodiment.

[0044] First, in a preparation step, a lead frame 1 is prepared (step S21). Next, in a first lead frame processing step, the lead frame 1 is pressed using a molding die consisting of an upper die and a lower die to form a die pad 1a, a frame portion 1d located above the upper surface of the die pad 1a and surrounding the die pad 1a, an arm 9 connected to the die pad 1a and located above the upper surface of the die pad 1a, and a bridge 11 connecting the die pad 1a and the frame portion 1d and having a step (step S22). In a bonding step, a power chip 7 is bonded to the upper surface of the die pad 1a, and an insulating sheet 2 is bonded to the lower surface of the die pad 1a (step S23). A control IC 5 is also bonded to the terminal 1c.

[0045] Next, in the molding process, with the upper end of the arm 9 held down by a pin 10 provided in the upper mold, the die pad 1a, arm 9, bridge 11, power chip 7, control IC 5 (see Figure 1), and insulating sheet 2 are sealed with molding resin 8 so that the underside of the insulating sheet 2 is exposed (step S24).

[0046] Finally, in the second lead frame processing step, the excess portion of the lead frame 1 including the bridge 11 is cut off by press processing (step S25), thereby completing the semiconductor device.

[0047] As described above, in the third embodiment, the pin 10 provided in the upper mold holds down the arm 9 during the molding process, and the bridge 11 prevents the die pad 1a from floating, so that the adhesion between the die pad 1a and the insulating sheet 2 is further improved compared to the first and second embodiments, and the flow of the molding resin 8 between the die pad 1a and the insulating sheet 2 during the molding process can be further prevented. Therefore, the yield and quality of the semiconductor device can be improved compared to the first and second embodiments.

[0048] It should be noted that the embodiments can be freely combined, and each embodiment can be modified or omitted as appropriate.

[0049] Various aspects of the present disclosure are summarized below as appendices.

[0050] (Appendix 1) A semiconductor device molded in a mold die consisting of an upper die and a lower die, a die pad having a first main surface and a second main surface opposite to the first main surface; a semiconductor element bonded to the first main surface of the die pad; an insulating sheet bonded to the second main surface of the die pad; a terminal connected to the die pad and extending laterally; a die pad pressing portion connected to the die pad, located above the first main surface, and capable of being pressed by a pin provided in the upper die; a mold resin that seals the die pad, the die pad pressing portion, the semiconductor element, and the insulating sheet so that a surface of the insulating sheet opposite to a surface on the die pad side is exposed; The molding resin has a recess into which the pin can be inserted at a position that overlaps with the die pad pressing portion in a top view.

[0051] (Appendix 2) The die pad pressing portion includes two of the die pad pressing portions, 2. The semiconductor device according to claim 1, wherein the two die pad pressing portions are positioned on a diagonal line of the die pad when viewed from above.

[0052] (Appendix 3) 2. The semiconductor device according to claim 1, wherein the die pad pressing portion is located on the opposite side of the die pad from the side to which the terminal is connected in a top view.

[0053] (Appendix 4) a preparation step of preparing a lead frame; a lead frame first processing step in which the lead frame is pressed using a molding die consisting of an upper die and a lower die to form a die pad having a first main surface and a second main surface opposite to the first main surface, a frame portion surrounding the die pad, and a die pad pressing portion connected to the die pad and located above the first main surface of the die pad; a bonding step of bonding a semiconductor element to the first main surface of the die pad and bonding an insulating sheet to the second main surface of the die pad; a molding process of sealing the die pad, the die pad pressing portion, the semiconductor element, and the insulating sheet with a molding resin in a state in which the die pad pressing portion is pressed by a pin provided in the upper mold, so that a surface of the insulating sheet opposite to the surface on the die pad side is exposed; A method for manufacturing a semiconductor device comprising:

[0054] (Appendix 5) a preparation step of preparing a lead frame; a lead frame first processing step in which the lead frame is press-processed using a molding die consisting of an upper die and a lower die to form a die pad having a first main surface and a second main surface opposite to the first main surface, a frame portion located above the first main surface of the die pad and surrounding the die pad, and a bridge having a step and connecting the die pad and the frame portion; a bonding step of bonding a semiconductor element to the first main surface of the die pad and bonding an insulating sheet to the second main surface of the die pad; a molding step of sealing the die pad, the bridge, the semiconductor element, and the insulating sheet with a molding resin so that a surface of the insulating sheet opposite to the surface on the die pad side is exposed; a second lead frame processing step of cutting the bridge by the press processing; A method for manufacturing a semiconductor device comprising:

[0055] (Appendix 6) a preparation step of preparing a lead frame; a lead frame first processing step in which the lead frame is press-processed using a molding die consisting of an upper die and a lower die to form a die pad having a first main surface and a second main surface opposite to the first main surface, a frame portion located above the first main surface of the die pad and surrounding the die pad, a die pad pressing portion connected to the die pad and located above the first main surface of the die pad, and a bridge having a step that connects the die pad and the frame portion; a bonding step of bonding a semiconductor element to the first main surface of the die pad and bonding an insulating sheet to the second main surface of the die pad; a molding process of sealing the die pad, the die pad pressing portion, the bridge, the semiconductor element, and the insulating sheet with a molding resin in a state in which the die pad pressing portion is pressed by a pin provided in the upper mold, so that a surface of the insulating sheet opposite to the surface on the die pad side is exposed; a second lead frame processing step of cutting the bridge by the press processing; A method for manufacturing a semiconductor device comprising: [Explanation of symbols]

[0056] 1 lead frame, 1a die pad, 1c terminal, 1d frame portion, 2 insulating sheet, 7 power chip, 8 molding resin, 8a recess, 9 arm, 10 pin, 11 bridge.

Claims

1. A semiconductor device molded in a mold die consisting of an upper die and a lower die, a die pad having a first main surface and a second main surface opposite to the first main surface; a semiconductor element bonded to the first main surface of the die pad; an insulating sheet bonded to the second main surface of the die pad; a terminal connected to the die pad and extending laterally; a die pad pressing portion connected to the die pad, located above the first main surface, and capable of being pressed by a pin provided in the upper die; a mold resin that seals the die pad, the die pad pressing portion, the semiconductor element, and the insulating sheet so that a surface of the insulating sheet opposite to a surface on the die pad side is exposed; The molding resin has a recess into which the pin can be inserted at a position that overlaps with the die pad pressing portion in a top view.

2. two die pad pressing portions; 2. The semiconductor device according to claim 1, wherein the two die pad pressing portions are positioned on a diagonal line of the die pad when viewed from above.

3. 2. The semiconductor device according to claim 1, wherein the die pad pressing portion is located on the side of the die pad opposite to the side to which the terminals are connected, as viewed from above.

4. a preparation step of preparing a lead frame; a lead frame first processing step in which the lead frame is pressed using a molding die consisting of an upper die and a lower die to form a die pad having a first main surface and a second main surface opposite to the first main surface, a frame portion surrounding the die pad, and a die pad pressing portion connected to the die pad and located above the first main surface of the die pad; a bonding step of bonding a semiconductor element to the first main surface of the die pad and bonding an insulating sheet to the second main surface of the die pad; a molding process of sealing the die pad, the die pad pressing portion, the semiconductor element, and the insulating sheet with a molding resin in a state in which the die pad pressing portion is pressed by a pin provided in the upper mold, so that a surface of the insulating sheet opposite to the surface on the die pad side is exposed; A method for manufacturing a semiconductor device comprising:

5. a preparation step of preparing a lead frame; a lead frame first processing step in which the lead frame is press-processed using a molding die consisting of an upper die and a lower die to form a die pad having a first main surface and a second main surface opposite to the first main surface, a frame portion located above the first main surface of the die pad and surrounding the die pad, and a bridge having a step connecting the die pad and the frame portion; a bonding step of bonding a semiconductor element to the first main surface of the die pad and bonding an insulating sheet to the second main surface of the die pad; a molding step of sealing the die pad, the bridge, the semiconductor element, and the insulating sheet with a molding resin so that a surface of the insulating sheet opposite to the surface on the die pad side is exposed; a second lead frame processing step of cutting the bridge by the press processing; A method for manufacturing a semiconductor device comprising:

6. a preparation step of preparing a lead frame; a lead frame first processing step in which the lead frame is press-processed using a molding die consisting of an upper die and a lower die to form a die pad having a first main surface and a second main surface opposite to the first main surface, a frame portion located above the first main surface of the die pad and surrounding the die pad, a die pad pressing portion connected to the die pad and located above the first main surface of the die pad, and a bridge having a step connecting the die pad and the frame portion; a bonding step of bonding a semiconductor element to the first main surface of the die pad and bonding an insulating sheet to the second main surface of the die pad; a molding process of sealing the die pad, the die pad pressing portion, the bridge, the semiconductor element, and the insulating sheet with a molding resin in a state in which the die pad pressing portion is pressed by a pin provided in the upper mold, so that a surface of the insulating sheet opposite to the surface on the die pad side is exposed; a second lead frame processing step of cutting the bridge by the press processing; A method for manufacturing a semiconductor device comprising:

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