Adhesive tape

Abstract

To provide an adhesive tape capable of properly suppressing the generation of static electricity in a substrate or a component when picking up the substrate or the component in a state of being pushed up from the side of the adhesive tape after the adhesive tape, to which the substrate or the component is attached, is extended radially.SOLUTION: An adhesive tape 100 includes a substrate 4 and an adhesive layer 2, with at least one type of the substrate and components temporarily fixed when the adhesive tape is used. The substrate 4 includes a resin material and a conductive material; forcibly charges the adhesive tape 100 in a TD direction to 5000 [V] under a condition of 23°C and 50%RH, where the time required for attenuation of the band voltage to 5 [V] is X [seconds]; and forcibly charges the adhesive tape 100 in the TD direction to 5000 [V] with the adhesive tape 100 extended in the TD direction by 50%, where the time required for attenuation of the band voltage to 5 [V] is Y [seconds]; and a relationship of Y-X<1.0 second is satisfied.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present invention relates to an adhesive tape used for temporarily fixing at least one of a substrate and a component. [Background technology]

[0002] In response to the recent trend toward more sophisticated electronic devices and the expansion of mobile applications, there is a growing demand for higher density and integration of semiconductor devices, and IC packages are becoming larger in capacity and higher in density.

[0003] For example, a method for manufacturing these semiconductor devices involves first applying adhesive tape to a semiconductor substrate (semiconductor wafer) as a substrate, and then dicing the semiconductor substrate in the thickness direction using a dicing saw while fixing the periphery of the semiconductor substrate with a wafer ring. This results in the semiconductor substrate being cut into individual semiconductor elements (semiconductor chips). Next, an expanding process is performed in which the adhesive tape is stretched radially using the wafer ring to form gaps between adjacent semiconductor elements. This is followed by a pick-up process in which the singulated semiconductor elements are picked up while being pushed up with a needle. The picked-up semiconductor elements are then transferred to a mounting process in which they are mounted on a metal lead frame or substrate (e.g., a tape substrate, an organic hard substrate, etc.). In the mounting process, the picked-up semiconductor elements are adhered to the lead frame or substrate via, for example, an underfill material, and then the semiconductor elements are encapsulated on the lead frame or substrate with an encapsulant to produce a semiconductor device.

[0004] In recent years, various studies have been conducted on adhesive tapes (dicing tapes) used in the manufacture of such semiconductor devices (see, for example, Patent Document 1).

[0005] This adhesive tape generally has a substrate (film substrate) and an adhesive layer formed on the substrate, and the semiconductor substrate is fixed by the adhesive layer. With an adhesive tape having such a configuration, as in the semiconductor device manufacturing method described above, after the dicing step of dicing the semiconductor substrate, an expanding step of radially stretching the adhesive tape is performed, thereby forming gaps between adjacent semiconductor elements, and then a pick-up step of picking up the semiconductor elements is performed. That is, in the pick-up step after the dicing and expanding steps, while forming gaps between adjacent semiconductor elements, the semiconductor elements are pushed up using needles, and while maintaining this state, the semiconductor elements are picked up by suction using a vacuum collet or air tweezers, for example.

[0006] Here, when adhesive tape is applied to the semiconductor wafer in the dicing process described above, when the semiconductor wafer is cut using a dicing saw, and when the semiconductor elements are picked up in the pick-up process, static electricity is generated in the semiconductor elements, and the discharge of this static electricity in the semiconductor elements causes damage to the semiconductor elements, resulting in a problem of deterioration in the characteristics of the semiconductor elements.

[0007] In order to solve this problem, that is, to prevent the generation of static electricity in semiconductor elements, an adhesive tape has been proposed that has an antistatic film provided on a substrate (see, for example, Patent Document 2).

[0008] However, in this case, there is a problem that the antistatic function is impaired due to breakage of the antistatic film when the adhesive tape is radially stretched in the expanding step, and there is also a concern that this problem will impair the effect of preventing or suppressing the generation of static electricity in semiconductor elements.

[0009] Furthermore, such problems are not limited to cases where semiconductor elements as components are obtained by cutting a semiconductor substrate (semiconductor wafer) as a substrate in the thickness direction, but also occur in cases where various substrates such as glass substrates, ceramic substrates, resin material substrates, and metal material substrates are cut (divided) in the thickness direction, and then the diced components are obtained by picking up the diced components while the adhesive tape is stretched radially. [Prior art documents] [Patent documents]

[0010] [Patent Document 1] Japanese Patent Application Laid-Open No. 2009-245989 [Patent Document 2] Japanese Patent Application Laid-Open No. 2012-248607 Summary of the Invention [Problem to be solved by the invention]

[0011] The present invention aims to provide an adhesive tape that can accurately prevent or suppress the generation of static electricity on a substrate or component when picking up the substrate or component attached to the adhesive tape by stretching the adhesive tape radially and then pushing up the substrate or component from the adhesive tape side, thereby enabling the pickup to be carried out. [Means for solving the problem]

[0012] These objects can be achieved by the present invention as set forth in (1) to (12) below. (1) An adhesive tape comprising a substrate and an adhesive layer laminated on one side of the substrate, the adhesive layer containing a base resin having adhesive properties as a main material, and used for temporarily fixing at least one of a substrate and a component, the substrate includes a resin material and a conductive material, Under the conditions of 23°C and 50% RH, the adhesive tape is forcibly charged to 5000 [V] in the TD direction, and then the time it takes for the charged voltage to decay to 5 [V] is defined as X [seconds]. When the adhesive tape is stretched 50% in the TD direction, the adhesive tape is forcibly charged to 5000 [V] in the TD direction, and the time it takes for the charged voltage to decay to 5 [V] is defined as Y [seconds]. An adhesive tape characterized by satisfying YX < 1.0 seconds. (2) The pressure-sensitive adhesive tape according to (1), wherein the time X [seconds] is 1.0 seconds or less.

[0013] (3) The adhesive tape according to (1) or (2) above, wherein when the adhesive tape is stretched 100% in the TD direction and then forcibly charged to 5000 [V] in the TD direction, and the time taken for the charged voltage to decay to 5 [V] is defined as Z1 [seconds], the time Z1 [seconds] is 5.0 seconds or less.

[0014] (4) The adhesive tape according to any one of (1) to (3) above, wherein when the adhesive tape is stretched by 250% in the TD direction and then forcibly charged to 5000 [V] in the TD direction, and the time taken for the charged voltage to decay to 5 [V] is defined as Z2 [seconds], the time Z2 [seconds] is 5.0 seconds or less.

[0015] (5) The adhesive tape according to any one of (1) to (4) above, wherein the conductive material is at least one of a conductive polymer, a permanently antistatic polymer (IDP), a metal oxide material, and a carbon material.

[0016] (6) The adhesive tape according to any one of (1) to (5), wherein the resin material is an ester polymer, a styrene polymer, an olefin polymer, a carbonate polymer, or a copolymer containing at least one of these polymers.

[0017] (7) The adhesive tape according to any one of (1) to (6) above, wherein the base resin is an acrylic resin.

[0018] (8) The adhesive tape according to any one of (1) to (7) above, wherein the content of the conductive material in the substrate is 5.0% by weight or more and 45.0% by weight or less.

[0019] (9) The adhesive tape according to any one of (1) to (7) above, wherein the adhesive layer further contains a curable resin that hardens when energy is applied, and the adhesive strength of the adhesive layer to at least one of the substrate and the component temporarily fixed on the adhesive layer decreases when energy is applied.

[0020] (10) The adhesive tape according to any one of (1) to (9) above, wherein the substrate has a thickness of 30 μm or more and 200 μm or less.

[0021] (11) The adhesive tape according to any one of (1) to (10) above, wherein the adhesive layer has a thickness of 5 μm or more and 100 μm or less.

[0022] (12) The adhesive tape according to any one of (1) to (11) above, which is used when the adhesive tape is used to form a plurality of components by cutting the substrate, with the substrate fixed on the adhesive layer, so as to reach partway in the thickness direction of the base material, thereby dividing the substrate, and then, while stretching the adhesive tape in the planar direction, pushing up the components from the base material side and pulling them out from the opposite side of the base material, thereby detaching the components from the adhesive layer. [Effects of the Invention]

[0023] According to the present invention, in an adhesive tape comprising a substrate and an adhesive layer laminated on one side of the substrate, the substrate of the adhesive tape contains a resin material and a conductive material, and satisfies the relationship YX < 1.0 second, where X [seconds] is the time it takes for the charged voltage to decay to 5 [V] after forcibly charging the adhesive tape to 5000 [V] in the TD direction under conditions of 23°C and 50% RH, and Y [seconds] is the time it takes for the charged voltage to decay to 5 [V] after forcibly charging the adhesive tape to 5000 [V] in the TD direction while stretching the adhesive tape 50% in the TD direction. Therefore, when the adhesive tape with a substrate or component attached thereto is radially stretched and then the substrate or component is picked up while being pushed up from the adhesive tape side, the pickup can be performed while accurately preventing or suppressing the generation of static electricity on the substrate or component. Therefore, when picking up a semiconductor element as a component, it is possible to appropriately suppress or prevent the semiconductor element from being damaged due to static electricity being discharged in the semiconductor element, which would result in a deterioration in the characteristics of the semiconductor element. [Brief explanation of the drawings]

[0024] [Figure 1] 1 is a longitudinal sectional view showing an example of a semiconductor device manufactured using the pressure-sensitive adhesive tape of the present invention. [Figure 2] FIG. 2 is a vertical cross-sectional view illustrating a method for manufacturing the semiconductor device shown in FIG. 1 using the pressure-sensitive adhesive tape of the present invention. [Figure 3] FIG. 2 is a vertical cross-sectional view illustrating a method for manufacturing the semiconductor device shown in FIG. 1 using the pressure-sensitive adhesive tape of the present invention. [Figure 4] FIG. 3 is an enlarged cross-sectional view of the area around the needle located in the area [A] surrounded by the dotted line in FIG. 2. [Figure 5] 1 is a longitudinal cross-sectional view showing an embodiment of a pressure-sensitive adhesive tape. [Figure 6] 6 is a vertical cross-sectional view illustrating a method for producing the pressure-sensitive adhesive tape shown in FIG. 5. FIG. DETAILED DESCRIPTION OF THE INVENTION

[0025] The pressure-sensitive adhesive tape of the present invention will be described in detail below. First, before describing the pressure-sensitive adhesive tape of the present invention, a semiconductor device manufactured using the pressure-sensitive adhesive tape of the present invention will be described.

[0026] <Semiconductor device> Figure 1 is a longitudinal cross-sectional view showing an example of a semiconductor device manufactured using the pressure-sensitive adhesive tape of the present invention. In the following description, the upper side in Figure 1 will be referred to as "top" and the lower side as "bottom." In addition, in each drawing referred to in this specification, dimensions in the left-right direction and / or thickness direction are exaggerated and differ significantly from the actual dimensions.

[0027] The semiconductor device 10 shown in Figure 1 has a semiconductor chip (semiconductor element) 20, an interposer (substrate) 30 that supports the semiconductor chip 20, a plurality of conductive bumps (terminals) 70, and a molded portion (sealing portion) 17 that seals the semiconductor chip 20.

[0028] The interposer 30 is an insulating substrate and is made of various resin materials such as polyimide, epoxy, cyanate, bismaleimide triazine (BT resin), etc. The planar shape of the interposer 30 is usually a quadrangle such as a square or rectangle.

[0029] On the upper surface (one surface) of the interposer 30, terminals 41 made of a conductive metal material such as copper are provided in a predetermined shape.

[0030] Furthermore, a plurality of vias (through holes) (not shown) are formed in the interposer 30 so as to penetrate through the interposer 30 in the thickness direction.

[0031] Each bump 70 has one end (upper end) electrically connected to a part of the terminal 41 through a respective via, and the other end (lower end) protrudes from the lower surface (other surface) of the interposer 30.

[0032] The portion of the bump 70 that protrudes from the interposer 30 is substantially spherical (ball-shaped).

[0033] The bumps 70 are mainly made of a brazing material such as solder, silver brazing, copper brazing, or phosphorus copper brazing.

[0034] Furthermore, terminals 41 are formed on the interposer 30. Terminals 21 of the semiconductor chip 20 are electrically connected to the terminals 41 via connecting portions 81.

[0035] In this embodiment, as shown in FIG. 1, the terminals 21 are configured to protrude from the surface formed on the semiconductor chip 20, and the terminals 41 are also configured to protrude from the interposer 30.

[0036] The gap between the semiconductor chip 20 and the interposer 30 is filled with an underfill material made of various resin materials, and the hardened underfill material forms a sealing layer 80. This sealing layer 80 has the function of improving the bonding strength between the semiconductor chip 20 and the interposer 30 and the function of preventing the intrusion of foreign matter, moisture, etc. into the gap.

[0037] Furthermore, on the upper side of the interposer 30, a molded portion 17 formed to cover the semiconductor chip 20 and the interposer 30 is made of a hardened semiconductor sealing material (sealant), thereby sealing the semiconductor chip 20 within the semiconductor device 10 and preventing the intrusion of foreign matter, moisture, etc. into the semiconductor chip 20.

[0038] 1, the semiconductor chip 20 (semiconductor element) has a semiconductor chip body 23 (semiconductor element body) and terminals 21 protruding from the lower surface of the semiconductor chip body 23. A circuit (not shown) is built into the upper surface of the semiconductor chip body 23, and the semiconductor chip body 23 is mainly made of a semiconductor material such as Si, SiC, GaN, or Ga2O3.

[0039] The semiconductor device 10 and the semiconductor chip 20 having such a configuration are manufactured as follows by, for example, a method for manufacturing a semiconductor device using an adhesive tape.

[0040] <Method of manufacturing semiconductor device> 2 and 3 are longitudinal cross-sectional views illustrating a method for manufacturing the semiconductor device shown in FIG. 1 using the adhesive tape of the present invention, and FIG. 4 is an enlarged cross-sectional view of the periphery of a needle located in the area [A] surrounded by a dotted line in FIG. 2. In the following description, the upper side in FIGS. 2 to 4 will be referred to as "upper" and the lower side will be referred to as "lower." In addition, in each of the drawings referred to in this specification, the dimensions in the left-right direction and / or thickness direction are exaggerated and differ significantly from the actual dimensions.

[0041] [1A] First, prepare an adhesive tape 100 composed of a laminate having a base material 4 and an adhesive layer 2 laminated on the upper surface of the base material 4. As shown in FIG. 2(a), place a semiconductor substrate 7 (semiconductor wafer) on the adhesive layer 2 in the center 122 of the tape, and lightly press down to laminate (temporarily fix) the semiconductor substrate 7 (attachment process).

[0042] A plurality of circuit groups are formed on the upper surface of the semiconductor substrate 7, and terminals 21 are formed on the lower surface. When the semiconductor substrate 7 is divided into individual pieces, the circuit groups and terminals 21 are also divided, and a plurality of semiconductor chips 20 (semiconductor chip main body portions 23) are obtained. The semiconductor substrate 7 is placed on the adhesive layer 2 so that the upper surface on which the circuits are formed, i.e., the uneven surface on which the unevenness is formed, is in contact with the adhesive layer 2.

[0043] [2A] Next, as shown in FIG. 2(b), the adhesive tape 100 on which the semiconductor substrate 7 is laminated is placed on a dicer table 200.

[0044] [3A] Next, the outer peripheral portion 121 of the adhesive layer 2 is fixed with a wafer ring 9, and then a dicing saw (blade) (not shown) is used to cut (diced) the semiconductor substrate 7 as a substrate into individual pieces. This results in semiconductor chips 20 as components on the adhesive tape 100 (singulation step; see FIG. 2(c)).

[0045] At this time, the adhesive tape 100 has a buffering effect and prevents cracks, chips, etc. from occurring when the semiconductor substrate 7 is cut.

[0046] 2(c), the cutting of the semiconductor substrate 7 with the blade is carried out so as to reach partway through the thickness direction of the base material 4. This ensures that the semiconductor substrate 7 is divided into individual pieces, and the obtained semiconductor chips 20 (components) are temporarily fixed.

[0047] At this time, cutting water is supplied to the semiconductor substrate 7 while cutting the semiconductor substrate 7 in order to prevent the scattering of dust generated when cutting the semiconductor substrate 7 and to prevent the semiconductor substrate 7 from being unnecessarily heated.

[0048] [4A] Next, the adhesive tape 100 with the semiconductor substrate 7 attached is transferred from a dicing device (not shown) to a pickup device (not shown). Then, with the outer periphery 121 of the adhesive layer 2 fixed to the wafer ring 9, the center portion 310 of the table 300 is pushed upward toward the outer periphery 320. This stretches the adhesive tape 100 radially, forming gaps between the semiconductor chips 20 (components) (expanding step; see FIG. 2(d)).

[0049] In the expanding step, an adhesive tape 100 is used. The adhesive tape 100 includes a substrate 4 containing a resin material and a conductive material, and an adhesive layer 2 containing an adhesive base resin as a main material. The substrate 4 satisfies the relationship YX < 1.0 second, where X [seconds] is the time it takes for the charged voltage to decay to 5 [V] after the adhesive tape 100 is forcibly charged to 5000 [V] in the TD direction under conditions of 23°C and 50% RH and the adhesive tape 100 is stretched 50% in the TD direction and the adhesive tape 100 is forcibly charged to 5000 [V] in the TD direction under conditions of 23°C and 50% RH and the time it takes for the charged voltage to decay to 5 [V] after the adhesive tape 100 is forcibly charged to 5000 [V] in the TD direction under conditions of 23°C and 50% RH.

[0050] By using such adhesive tape 100, it is possible to reliably prevent or suppress the generation of static electricity in the semiconductor chips 20 when, in the expanding step, the adhesive tape 100 to which the diced semiconductor chips 20 are attached is radially stretched, and then, in the picking up step, the diced semiconductor chips 20 are picked up by pushing up with the needles 430. This makes it possible to reliably suppress or prevent the characteristics of the semiconductor chips 20 from deteriorating.

[0051] Thereafter, energy is applied to the adhesive layer 2 to reduce its adhesive strength to the semiconductor chip 20. The application of energy to the adhesive layer 2 may be carried out before the expanding step. Furthermore, if individual division is not performed, energy may be applied before the dicing step to reduce the adhesive strength of the adhesive layer 2 to the semiconductor substrate 7.

[0052] [5A] Next, the semiconductor chip 20 is picked up on the stage 400 by a vacuum collet or air tweezers (pick-up step; see FIG. 2(e)).

[0053] In the pick-up process, for example, the needle 430 (not shown in FIG. 2) is moved from a state in which it is housed in the ejector head 410 as shown in FIG. 4(a) to a state in which it is protruded from the ejector head 410 as shown in FIG. 4(b). That is, the needle 430 is protruded in the thickness direction. As a result, the semiconductor chip 20 attached to the adhesive tape 100 is pushed up. This causes the semiconductor chip 20 to be peeled off from the adhesive tape 100. Thereafter, the semiconductor chip 20 is picked up by suction using a vacuum collet or air tweezers, as shown in FIG. 4(c).

[0054] By performing the above steps [1A] to [5A], the semiconductor chip 20 is obtained. That is, with the semiconductor substrate 7 fixed on the adhesive layer 2 of the adhesive tape 100, the adhesive tape 100 is cut from the semiconductor substrate 7 to reach partway in the thickness direction of the base material 4, thereby dividing the semiconductor substrate 7 into individual pieces, thereby forming a plurality of semiconductor chips 20. Thereafter, after forming gaps between the semiconductor chips 20, the adhesive tape 100 is further stretched in the planar direction while pushing up the semiconductor chips 20 from the base material 4 side, and then pulled out from the opposite side of the base material 4, whereby the semiconductor chips 20 are separated from the adhesive layer 2.

[0055] [6A] Next, the picked-up semiconductor chip 20 is transferred from the vacuum collet or air tweezers to a mounting probe or the like and turned upside down. Thereafter, as shown in FIG. 3(a), the semiconductor chip 20 is placed on the interposer 30. At this time, the terminals 21 of the semiconductor chip 20 and the terminals 41 of the interposer 30 face each other via the solder bumps 85.

[0056] [7A] Next, heating is performed as shown in FIG. 3(b). This melts the solder bumps 85. As a result, connection portions 81 that connect the terminals 21 and 41 are obtained. Then, the terminals 21 and 41 are electrically connected via the connection portions 81 (mounting step; see FIG. 3(c)).

[0057] [8A] Next, an underfill material (sealing material) made of various resin materials is filled into the gap formed between the semiconductor chip 20 and the interposer 30. Thereafter, the underfill material is cured to form a sealing layer 80 made of the cured underfill material (sealing layer forming process; see FIG. 3(d)).

[0058] [9A] Next, a molded portion 17 (sealing portion) that covers the semiconductor chip 20 is formed on the upper side of the interposer 30. In addition, bumps 70 that are electrically connected to the terminals 41 through vias (not shown) that penetrate the interposer 30 are arranged on the lower side of the interposer 30 (see FIG. 3(e)).

[0059] To seal with the molded portion 17, for example, a mold having an internal space corresponding to the shape of the molded portion 17 to be formed is prepared, and a powdered semiconductor encapsulation material is filled into the internal space. Then, in this state, the semiconductor encapsulation material is heated to harden, thereby obtaining the molded portion 17. The semiconductor device 10 is obtained by the method for manufacturing a semiconductor device having the steps described above.

[0060] An adhesive tape 100 used in the manufacturing method of such a semiconductor device 10 will be described below.

[0061] <Adhesive tape> Fig. 5 is a longitudinal sectional view showing an embodiment of the pressure-sensitive adhesive tape of the present invention. In the following description, the upper side in Fig. 5 will be referred to as "top" and the lower side as "bottom."

[0062] The pressure-sensitive adhesive tape 100 is constituted by a laminate including a substrate 4 containing a resin material and a conductive material, and a pressure-sensitive adhesive layer 2 laminated on one surface of the substrate 4. The pressure-sensitive adhesive tape 100 is forcibly charged to 5000 [V] in the TD direction under conditions of 23°C and 50% RH, and the time taken for the charged voltage to subsequently decay to 5 [V] is defined as X [seconds]. Furthermore, the pressure-sensitive adhesive tape 100 is forcibly charged to 5000 [V] in the TD direction under conditions of 23°C and 50% RH while being stretched 50% in the TD direction, and the time taken for the charged voltage to subsequently decay to 5 [V] is defined as Y [seconds]. The pressure-sensitive adhesive tape 100 satisfies the relationship YX < 1.0 second.

[0063] Here, in the pick-up step, when the individual semiconductor chips 20 are picked up by pushing them up with the needles 430, it is necessary to accurately prevent or suppress the generation of static electricity in the semiconductor chips 20.

[0064] Based on the study by the present inventors regarding the required characteristics of the pressure-sensitive adhesive tape 100, the base material 4 of the pressure-sensitive adhesive tape 100 contains a resin material and a conductive material, as described above. The pressure-sensitive adhesive tape 100 is forcibly charged to 5000 V in the TD direction under conditions of 23° C. and 50% RH. The time taken for the charged voltage to subsequently decay to 5 V is defined as X seconds. Furthermore, the pressure-sensitive adhesive tape 100 is forcibly charged to 5000 V in the TD direction under conditions of 23° C. and 50% RH. The pressure-sensitive adhesive tape 100 is stretched 50% in the TD direction under conditions of 23° C. and 50% RH. When this time taken for the charged voltage to subsequently decay to 5 V is defined as Y seconds, the pressure-sensitive adhesive tape 100 satisfies the relationship YX<1.0 second.

[0065] The forced charging of the pressure-sensitive adhesive tape 100 in the TD direction and the subsequent charging voltage are measured using a charge decay data analyzer ("STATIC DECAY METER MODEL 406C" manufactured by Electro-Tech Systems, Inc.) under conditions of 23°C and 50% RH. More specifically, the charge decay data analyzer is set so that a voltage is applied in the TD direction to the surface of the substrate 4 of the pressure-sensitive adhesive tape 100 opposite the adhesive layer 2, and then the pressure-sensitive adhesive tape 100 is forcedly charged to 5000 [V], and the time it takes for the charging voltage to decay to 5 [V] is measured.

[0066] After such forced charging in the TD direction, the decay time for the charged voltage to decay to 5 [V] is compared between the pressure-sensitive adhesive tape 100 in an unstretched state (stretch rate 0%) and the pressure-sensitive adhesive tape 100 in a state stretched 50% in the TD direction (stretch rate 50%). When the decay time measured for the former is X [seconds] and the decay time measured for the latter is Y [seconds], the pressure-sensitive adhesive tape 100 satisfies the relational expression (YX) of the difference between these values, which is less than 1.0 second.

[0067] What this relationship means is that even if the adhesive tape 100 to which the individual semiconductor chips 20 are attached is stretched radially during the expanding process, the change in the tendency of the adhesive tape 100 to become charged is small.

[0068] Therefore, even if static electricity is unintentionally generated in the semiconductor chip 20 when the individual semiconductor chip 20 is picked up by being pushed up by the needle 430 in the pick-up process, this static electricity can be quickly dissipated. This makes it possible to suppress damage to the semiconductor chip 20 caused by the discharge of static electricity, and to accurately suppress or prevent the characteristics of the semiconductor chip 20 from deteriorating.

[0069] By repeating the steps [5A] to [9A], multiple semiconductor devices 10 can be obtained from one semiconductor substrate 7. At this time, the repetition of steps [5A] to [9A] may be stopped temporarily while several semiconductor chips 20 remain on the adhesive tape 100, and then steps [5A] to [9A] may be started again. At this time, if the stop time is long, the adhesive tape 100 to which the semiconductor chips 20 are attached may be removed (peeled off) from the dicer table. Even in such cases, the generation of static electricity on the semiconductor chips 20 can be appropriately suppressed or prevented.

[0070] A stretch rate of 50% refers to a state in which the adhesive tape 100 is stretched to 1.5 times its initial length, and a stretch rate of 100%, which will be described later, refers to a state in which the adhesive tape 100 is stretched to twice its initial length.

[0071] The stretch ratios of 50% and 100% are set as values ​​that can sufficiently cover the range in which the adhesive tape 100 is stretched in the expanding step, even when the stretch ratio is increased from the perspective of pickup efficiency or other reasons. Specifically, when the semiconductor chips 20 are miniaturized, the number of cut lines increases, and therefore a higher stretch ratio is required to maintain the chip spacing. In light of this background, the adhesive tape 100 is likely to maintain its antistatic performance and can suppress the occurrence of problems caused by static electricity, even when subjected to an expanding step with a high stretch ratio.

[0072] The substrate 4 and adhesive layer 2 of this adhesive tape 100 (dicing tape) will be described in detail below.

[0073] <Base material 4> The substrate 4 contains a resin material as a main material and a conductive material, and has the function of supporting the adhesive layer 2 provided on the substrate 4. Furthermore, in the adhesive tape 100 including the substrate 4, the types of resin material and conductive material are selected, and the contents thereof, etc. are set, so as to satisfy the relationship YX < 1.0 second, as described above.

[0074] The resin material is not particularly limited, but examples thereof include polyethylenes such as low-density polyethylene, linear polyethylene, medium-density polyethylene, high-density polyethylene, and very low-density polyethylene; polypropylenes such as random copolymer polypropylene, block copolymer polypropylene, and homopolypropylene; polyolefin resins (olefin polymers) such as polyvinyl chloride, polybutene, polybutadiene, and polymethylpentene; ionomers such as ethylene-vinyl acetate copolymers, zinc ion crosslinkers, and sodium ion crosslinkers; olefins such as ethylene-(meth)acrylic acid copolymers, ethylene-(meth)acrylic acid ester (random, alternating) copolymers, ethylene-propylene copolymers, ethylene-butene copolymers, and ethylene-hexene copolymers. Examples of suitable thermoplastic resins include olefin-based thermoplastic elastomers (olefin-based polymers), such as styrene-based copolymers, polyester-based resins (ester polymers) such as polyethylene terephthalate, polyethylene naphthalate, polybutylene terephthalate, and polybutylene naphthalate, polyurethanes, polyimides, polyamides, polyether ketones such as polyether ether ketone, polyethersulfones, polystyrenes, fluororesins, silicone resins, cellulose-based resins, styrene-based thermoplastic elastomers (styrene-based polymers), olefin-based thermoplastic elastomers (olefin-based polymers) such as polypropylene-based thermoplastic elastomers, acrylic resins, polyester-based thermoplastic elastomers, polyvinyl isoprene, and polycarbonates (carbonate-based polymers), as well as mixtures of these thermoplastic resins. Among these, ester-based polymers, styrene-based polymers, olefin-based polymers, carbonate-based polymers, and copolymers containing at least one of these polymers are preferred.

[0075] These resin materials can transmit energy rays such as light (visible light, near-infrared light, ultraviolet light), X-rays, and electron beams, and therefore can be preferably used in the expanding process when energy rays are irradiated onto the adhesive layer 2 from the substrate 4 side by passing through the substrate 4.

[0076] In particular, it is preferable to use an elastomer alone, a mixture of polypropylene and an elastomer, or a mixture of polyethylene and an elastomer as the resin material, which makes it relatively easy to satisfy the relationship YX < 1.0 seconds.

[0077] Among the above-mentioned styrene-based thermoplastic elastomers, olefin-based thermoplastic elastomers, and polyester-based thermoplastic elastomers, styrene-based thermoplastic elastomers, which are block copolymers consisting of polystyrene segments and vinyl polyisoprene segments, are particularly preferred as the elastomer, as this makes it easier to satisfy the relationship YX < 1.0 seconds.

[0078] The substrate 4 also contains a conductive material dispersed in the resin material contained as the main material. This allows the conductive material to function as an antistatic agent. As a result, an adhesive tape 100 is obtained that satisfies the relationship YX < 1.0 second.

[0079] The conductive material is not particularly limited, but examples thereof include conductive polymers, surfactants, permanently antistatic polymers (IDPs), metal materials, metal oxide materials, and carbon-based materials (carbon materials), and one or more of these may be used in combination.

[0080] Examples of conductive polymers include polythiophene, polyaniline, polypyrrole, polyacetylene, PEDOT (poly-ethylenedioxythiophene), PEDOT / PSS, poly(p-phenylene), polyfluorene, polycarbazole, polysilane, and derivatives thereof, and one or more of these can be used in combination.

[0081] Examples of polythiophene or derivatives thereof include polythiophene, poly(3,4)-ethylenedioxythiophene, and poly(3-thiophene-β-ethanesulfonic acid).

[0082] Examples of polyaniline or its derivatives include polyaniline, polymethylaniline, and polymethoxyaniline.

[0083] Examples of polypyrrole or its derivatives include polypyrrole, poly 3-methylpyrrole, poly 3-octylpyrrole, and the like.

[0084] Examples of surfactants include anionic surfactants, cationic surfactants, nonionic surfactants, and amphoteric surfactants.

[0085] Examples of permanently antistatic polymers (IDPs) include various IDPs such as polyester amides, polyether ester polyolefins, polyether ester amides, and polyurethanes.

[0086] Examples of metal materials include gold, silver, copper or silver-coated copper, nickel, etc. Powders of these metal materials (metal powders) are also preferably used.

[0087] Examples of metal oxide materials include indium tin oxide (ITO), indium oxide (IO), antimony tin oxide (ATO), indium zinc oxide (IZO), tin oxide (SnO), etc. Powders of these metal oxide materials (metal oxide powders) are also preferably used.

[0088] Examples of carbon-based materials (carbon materials) include carbon black, carbon nanotubes such as single-walled carbon nanotubes and multi-walled carbon nanotubes, carbon nanofibers, CN nanotubes, CN nanofibers, BCN nanotubes, BCN nanofibers, and graphene.

[0089] Among these, the conductive material is preferably at least one of conductive polymers, permanently antistatic polymers (IDPs), metal oxide materials, and carbonaceous materials, which have low temperature dependency of resistivity, and therefore can reduce the amount of change in resistance value even when the substrate 4 is heated, for example.

[0090] The content of the conductive material in the substrate 4 varies slightly depending on the type of conductive material, but is preferably 5.0% by weight to 45.0% by weight, more preferably 5.0% by weight to 30% by weight, and even more preferably 10% by weight to 20% by weight, which makes it easy to achieve an adhesive tape 100 that satisfies the relationship YX < 1.0 second.

[0091] The substrate 4 may contain a softener such as mineral oil, a filler such as calcium carbonate, silica, talc, mica, or clay, an antioxidant, a light stabilizer, a lubricant, a dispersant, a neutralizer, a colorant, or the like.

[0092] The content of the resin material in the substrate 4 is preferably 50% by weight or more and 95% by weight or less, and more preferably 65% ​​by weight or more and 90% by weight or less, which makes it easy to realize an adhesive tape 100 that satisfies the relationship YX < 1.0 second.

[0093] The thickness of the base material 4 is not particularly limited, but is preferably 30 μm or more and 200 μm or less, and more preferably 40 μm or more and 150 μm or less. When the thickness of the base material 4 is within this range, the workability of dicing the semiconductor substrate 7 in the dicing step can be improved. Also, it is possible to easily realize an adhesive tape 100 that satisfies the relationship YX < 1.0 second. Furthermore, it is possible to more reliably prevent breakage of the base material 4 when expanding and picking up the semiconductor chip 20.

[0094] The surface roughness Ra of the substrate 4 is, for example, preferably 0.2 μm or more and 2.0 μm or less, and more preferably 0.5 μm or more and 1.5 μm or less. When the surface roughness Ra of the substrate 4 is within this range, the adhesion between the substrate 4 and the adhesive layer 2 is improved. When the adhesive tape 100 to which the singulated semiconductor chips 20 are attached is radially stretched in the expanding step, and when the semiconductor chips 20 are picked up in a state where they are pushed up by the needles 430 in the pick-up step, peeling between the substrate 4 and the adhesive layer 2 can be appropriately suppressed or prevented. The surface roughness Ra is the arithmetic mean roughness Ra specified in JIS B 0601:2013. The arithmetic mean roughness Ra can be measured using a stylus-type surface roughness tester or the like specified in JIS B 0633:2001.

[0095] In addition, it is preferable that the surface of the substrate 4 has exposed functional groups, such as hydroxyl groups and amino groups, that are reactive with the constituent materials contained in the adhesive layer 2. This makes it possible to more reliably suppress or prevent the peeling between the substrate 4 and the adhesive layer 2.

[0096] Furthermore, the substrate 4 is preferably one in which the conductive material is uniformly dispersed, but the conductive material may be unevenly distributed on the adhesive layer 2 side or the opposite side of the substrate 4. Furthermore, when the conductive material is unevenly distributed in the substrate 4, the substrate 4 may be a single layer body in which the content of the conductive material varies in the thickness direction, or a laminate body formed by laminating multiple layers with different contents of the conductive material. Furthermore, when the substrate 4 is configured as a laminate body (multilayer body), at least one of the type of resin material and the type of conductive material may be different in each layer.

[0097] <Adhesive layer 2> The adhesive layer 2 adheres to and supports the semiconductor substrate 7 in the dicing step, and when hardened by the application of energy, has adhesiveness to such an extent that the semiconductor chip 20 can be picked up in the pick-up step.

[0098] The adhesive layer 2 is made of a resin composition containing (1) a base resin having adhesive properties and (2) a curable resin that cures the adhesive layer 2 as main materials.

[0099] Each component contained in this resin composition will be described in detail below. (1) Base resin The base resin has adhesiveness and provides the adhesive layer 2 with adhesiveness to the semiconductor substrate 7 .

[0100] Examples of the base resin include known adhesive layer components such as acrylic resins (adhesives), silicone resins (adhesives), polyester resins (adhesives), polyvinyl acetate resins (adhesives), polyvinyl ether resins (adhesives), styrene elastomer resins (adhesives), polyisoprene resins (adhesives), polyisobutylene resins (adhesives), and urethane resins (adhesives). Of these, acrylic resins are preferred. Acrylic resins are preferred as the base resin because they have excellent heat resistance and are relatively easy and inexpensive to obtain.

[0101] The acrylic resin is a resin whose base polymer is a polymer (homopolymer or copolymer) whose main monomer component is (meth)acrylic acid ester.

[0102] The (meth)acrylic acid ester is not particularly limited, but examples thereof include methyl (meth)acrylate, ethyl (meth)acrylate, propyl (meth)acrylate, isopropyl (meth)acrylate, butyl (meth)acrylate, isobutyl (meth)acrylate, s-butyl (meth)acrylate, t-butyl (meth)acrylate, pentyl (meth)acrylate, hexyl (meth)acrylate, heptyl (meth)acrylate, octyl (meth)acrylate, isooctyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, nonyl (meth)acrylate, isononyl (meth)acrylate, and decyl (meth)acrylate. Examples of suitable acrylates include alkyl (meth)acrylates such as methyl (meth)acrylate, isodecyl (meth)acrylate, undecyl (meth)acrylate, dodecyl (meth)acrylate, tridecyl (meth)acrylate, tetradecyl (meth)acrylate, pentadecyl (meth)acrylate, hexadecyl (meth)acrylate, heptadecyl (meth)acrylate, and octadecyl (meth)acrylate; cycloalkyl (meth)acrylates such as cyclohexyl (meth)acrylate; and aryl (meth)acrylates such as phenyl (meth)acrylate. These acrylates may be used alone or in combination. Among these, alkyl (meth)acrylates such as methyl (meth)acrylate, ethyl (meth)acrylate, butyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, and octyl (meth)acrylate are preferred. Alkyl (meth)acrylates are particularly heat-resistant and can be obtained relatively easily and inexpensively.

[0103] In this specification, the term "(meth)acrylic acid ester" is used to include both acrylic acid ester and methacrylic acid ester.

[0104] The acrylic resin may contain a copolymerizable monomer as a monomer component constituting the polymer, if necessary, for the purpose of improving properties such as cohesive strength and heat resistance.

[0105] The copolymerizable monomer is not particularly limited, and examples thereof include hydroxyl group-containing monomers such as 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, and 6-hydroxyhexyl (meth)acrylate; epoxy group-containing monomers such as glycidyl (meth)acrylate; carboxyl group-containing monomers such as (meth)acrylic acid, itaconic acid, maleic acid, fumaric acid, crotonic acid, and isocrotonic acid; acid anhydride group-containing monomers such as maleic anhydride and itaconic anhydride; amide monomers such as (meth)acrylamide, N,N-dimethyl(meth)acrylamide, N-butyl(meth)acrylamide, N-methylol(meth)acrylamide, N-methylolpropane(meth)acrylamide, N-methoxymethyl(meth)acrylamide, and N-butoxymethyl(meth)acrylamide; amino group-containing monomers such as aminoethyl (meth)acrylate, N,N-dimethylaminoethyl (meth)acrylate, and t-butylaminoethyl (meth)acrylate; p) Examples of suitable monomers include cyano group-containing monomers such as acrylonitrile, olefin-based monomers such as ethylene, propylene, isoprene, butadiene, and isobutylene, styrene-based monomers such as styrene, α-methylstyrene, and vinyltoluene, vinyl ester-based monomers such as vinyl acetate and vinyl propionate, vinyl ether-based monomers such as methyl vinyl ether and ethyl vinyl ether, halogen atom-containing monomers such as vinyl chloride and vinylidene chloride, alkoxy group-containing monomers such as methoxyethyl (meth)acrylate and ethoxyethyl (meth)acrylate, and monomers having a nitrogen atom-containing ring such as N-vinyl-2-pyrrolidone, N-methylvinylpyrrolidone, N-vinylpyridine, N-vinylpiperidone, N-vinylpyrimidine, N-vinylpiperazine, N-vinylpyrazine, N-vinylpyrrole, N-vinylimidazole, N-vinyloxazole, N-vinylmorpholine, N-vinylcaprolactam, and N-(meth)acryloylmorpholine. These may be used alone or in combination of two or more.

[0106] The content of the copolymerizable monomer is preferably 40% by weight or less, and more preferably 10% by weight or less, of all the monomer components constituting the acrylic resin.

[0107] The structure derived from the copolymerizable monomer may be contained at the terminal of the main chain of the polymer constituting the acrylic resin, may be contained in the main chain, or may be contained both at the terminal of the main chain and in the main chain.

[0108] The copolymerizable monomer may be a polyfunctional monomer for the purpose of crosslinking between polymers.

[0109] Examples of polyfunctional monomers include 1,6-hexanediol (meth)acrylate, (poly)ethylene glycol di(meth)acrylate, (poly)propylene glycol di(meth)acrylate, neopentyl glycol di(meth)acrylate, pentaerythritol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, dipentaerythritol hexa(meth)acrylate, glycerin di(meth)acrylate, epoxy (meth)acrylate, polyester (meth)acrylate, urethane (meth)acrylate, divinylbenzene, butyl di(meth)acrylate, and hexyl di(meth)acrylate, and these can be used alone or in combination of two or more.

[0110] Ethylene-vinyl acetate copolymers and vinyl acetate polymers can also be used as copolymerizable monomers.

[0111] Such acrylic resins (polymers) are produced by polymerizing a single monomer component or a mixture of two or more monomer components, and polymerization methods such as solution polymerization, emulsion polymerization, bulk polymerization, and suspension polymerization are used to polymerize these monomer components.

[0112] From the viewpoint of preventing contamination of the semiconductor substrate 7 and the like during the dicing process, it is preferable that the acrylic resin has a low content of low-molecular-weight substances. Specifically, the weight-average molecular weight of the acrylic resin is set to preferably 300,000 or more and 5,000,000 or less, more preferably 400,000 or more and 4,000,000 or less, and even more preferably 500,000 or more and 1,500,000 or less. Note that if the weight-average molecular weight of the acrylic resin is less than the lower limit, depending on the type of monomer component, the contamination prevention properties for the semiconductor substrate 7 may be reduced, and adhesive residue may be left when the semiconductor chip 20 is peeled off. Note that the weight-average molecular weight is calculated as a standard polystyrene equivalent by gel permeation chromatography (GPC).

[0113] The acrylic resin preferably has a functional group (reactive functional group) that is reactive with a crosslinking agent or a photopolymerization initiator, such as a hydroxyl group or a carboxyl group (especially a hydroxyl group). This allows the crosslinking agent or the photopolymerization initiator to be linked to the acrylic resin, which is a polymer component. This effectively suppresses or prevents the crosslinking agent or the photopolymerization initiator from leaking from the adhesive layer 2. As a result, the adhesive strength of the adhesive layer 2 can be reliably reduced by applying energy to the adhesive layer 2.

[0114] (2) Curing resin The curable resin has a curing property such that it is cured by, for example, irradiation with energy rays. When the base resin is incorporated into the crosslinked structure of the curable resin by this curing, the adhesive strength of the adhesive layer 2 decreases.

[0115] As the curable resin, for example, a low molecular weight compound having at least two polymerizable carbon-carbon double bonds as functional groups in the molecule, which are capable of three-dimensional crosslinking by irradiation with energy rays such as ultraviolet rays or electron beams, is used. Specific examples include trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, tetramethylolmethane tetra(meth)acrylate, tetraethylene glycol di(meth)acrylate, 1,6-hexanediol di(meth)acrylate, neopentyl glycol di(meth)acrylate, dipentaerythritol hexa(meth)acrylate, dipentaerythritol monohydroxypenta(meth)acrylate, and the like. acrylate, 1,4-butylene glycol di(meth)acrylate, polyethylene glycol di(meth)acrylate, esters of (meth)acrylic acid with polyhydric alcohols such as glycerin di(meth)acrylate, ester acrylate oligomers, cyanurate compounds having a carbon-carbon double bond-containing group such as 2-propenyl-di-3-butenyl cyanurate, tris(2-acryloxyethyl)isocyanurate, tris(2-methacryloxyethyl)isocyanurate, 2-hydroxyethyl Examples of suitable compounds include isocyanurate compounds having a carbon-carbon double bond-containing group, such as bis(2-acryloxyethyl)isocyanurate, bis(2-acryloxyethyl)2-[(5-acryloxyhexyl)oxy]ethyl isocyanurate, tris(1,3-diacryloxy-2-propyl-oxycarbonylamino-n-hexyl)isocyanurate, tris(1-acryloxyethyl-3-methacryloxy-2-propyl-oxycarbonylamino-n-hexyl)isocyanurate, and tris(4-acryloxy-n-butyl)isocyanurate; commercially available oligoester acrylates; aromatic and aliphatic urethane acrylates; and bisphenol A-based epoxy acrylates. These compounds may be used alone or in combination. Among these, at least one of esters of (meth)acrylic acid and polyhydric alcohols, urethane acrylates, and bisphenol A-based epoxy acrylates is preferred.This allows the hardenable resin to be hardened more reliably by applying energy, that is, by irradiating it with energy rays.

[0116] The resin composition may contain two or more curable resins having different weight-average molecular weights. By using two or more curable resins in combination, the degree of crosslinking of the resin due to energy ray irradiation can be easily controlled.

[0117] When the resin composition contains a first curable resin and a second curable resin having a higher weight-average molecular weight, the weight-average molecular weight of the first curable resin is preferably about 100 to 1,000, and more preferably about 200 to 500. The weight-average molecular weight of the second curable resin is preferably about 1,000 to 30,000, more preferably about 1,000 to 10,000, and even more preferably about 2,000 to 5,000. Furthermore, the number of functional groups of the first curable resin is preferably 1 to 5, and the number of functional groups of the second curable resin is preferably 6 or more. By satisfying this relationship, the above-mentioned effects can be more significantly exhibited.

[0118] The curable resin is preferably blended in an amount of 30 to 200 parts by weight, more preferably 50 to 140 parts by weight, per 100 parts by weight of the base resin, thereby obtaining an adhesive layer 2 that can reliably exhibit the functions of the curable resin and the base resin.

[0119] In addition, when a double bond-introduced acrylic resin, i.e., an acrylic resin having a carbon-carbon double bond in a side chain, in the main chain, or at the end of the main chain, is used as the acrylic resin, the addition of a curable resin to the resin composition may be omitted. The double bond-introduced acrylic resin can impart curability to the adhesive layer 2 without a curable resin due to the function of the carbon-carbon double bond.

[0120] (3) Photopolymerization initiator The resin composition may contain a photopolymerization initiator that facilitates initiation of polymerization of the curable resin.

[0121] Examples of the photopolymerization initiator include 2,2-dimethoxy-1,2-diphenylethan-1-one, 1-[4-(2-hydroxyethoxy)-phenyl]-2-hydroxy-2-methyl-1-propan-1-one, 2-hydroxy-1-{4-[4-(2-hydroxy-2-methyl-propionyl)-benzyl]phenyl}-2-methyl-propan-1-one, benzyl diphenyl sulfide, tetramethylthiuram monosulfide, 4-(2-hydroxyethoxy)phenyl(2-hydroxy-2-propyl) ketone, α-hydroxy-α,α'- Dimethylacetophenone, 2-methyl-2-hydroxypropiophenone, 1-hydroxycyclohexyl phenyl ketone, Michler's ketone, acetophenone, methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 2-methyl-1-[4-(methylthio)-phenyl]-2-morpholinopropane-1, benzoin methyl ether, benzoin ethyl ether, benzoin propyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzyl, benzoin, Dibenzyl, α-hydroxycyclohexyl phenyl ketone, benzil dimethyl ketal, 2-hydroxymethylphenylpropane, 2-naphthalenesulfonyl chloride, 1-phenone-1,1-propanedione-2-(o-ethoxycarbonyl)oxime, benzophenone, benzoylbenzoic acid, 4,4'-dimethylaminobenzophenone, 4,4'-diethylaminobenzophenone, 4,4'-dichlorobenzophenone, 3,3'-dimethyl-4-methoxybenzophenone, o-acryloxybenzophenone, p-acryloxybenzophenone Benzophenone-4-carboxylic acid esters of acrylates such as benzophenone, o-methacryloxybenzophenone, p-methacryloxybenzophenone, p-(meth)acryloxyethoxybenzophenone, 1,4-butanediol mono(meth)acrylate, 1,2-ethanediol mono(meth)acrylate, 1,8-octanediol mono(meth)acrylate, thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, 2,4-dichlorothioxanthone, 2,Examples include 4-diethylthioxanthone, 2,4-diisopropylthioxanthone, azobisisobutyronitrile, β-chloroanthraquinone, camphorquinone, halogenated ketones, acylphosphinoxides, acylphosphonates, polyvinylbenzophenone, chlorothioxanthone, dodecylthioxanthone, dimethylthioxanthone, diethylthioxanthone, 2-ethylanthraquinone, t-butylanthraquinone, and 2,4,5-triarylimidazole dimers, and these can be used alone or in combination of two or more.

[0122] The photopolymerization initiator is preferably blended in a ratio of 0.1 to 50 parts by weight, more preferably 0.5 to 10 parts by weight, per 100 parts by weight of the base resin, thereby obtaining an adhesive layer 2 that can reliably exhibit the functions of the photopolymerization initiator.

[0123] (4) Crosslinking agent The resin composition may contain a crosslinking agent, which can impart appropriate hardness to the adhesive layer 2.

[0124] The crosslinking agent is not particularly limited, but examples thereof include isocyanate-based crosslinking agents, epoxy-based crosslinking agents, urea resin-based crosslinking agents, methylol-based crosslinking agents, chelate-based crosslinking agents, aziridine-based crosslinking agents, melamine-based crosslinking agents, polyvalent metal chelate-based crosslinking agents, acid anhydride-based crosslinking agents, polyamine-based crosslinking agents, carboxyl group-containing polymer-based crosslinking agents, etc. Among these, isocyanate-based crosslinking agents are preferred.

[0125] The isocyanate-based crosslinking agent is not particularly limited, but examples thereof include polyisocyanate compounds of polyvalent isocyanates, trimers of polyisocyanate compounds, trimers of isocyanate-terminated compounds obtained by reacting a polyisocyanate compound with a polyol compound, and blocked polyisocyanate compounds in which isocyanate-terminated urethane prepolymers are blocked with phenol, oximes, or the like.

[0126] Examples of polyisocyanates include 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 1,3-xylylene diisocyanate, 1,4-xylylene diisocyanate, diphenylmethane-4,4'-diisocyanate, diphenylmethane-2,4'-diisocyanate, 3-methyldiphenylmethane diisocyanate, hexamethylene diisocyanate, isophorone diisocyanate, dicyclohexylmethane-4,4'-diisocyanate, dicyclohexylmethane-2,4'-diisocyanate, 4,4'-diphenylether diisocyanate, 4,4'-[2,2-bis(4-phenoxyphenyl)propane]diisocyanate, and 2,2,4-trimethyl-hexamethylene diisocyanate. These may be used alone or in combination of two or more. Among these, at least one polyisocyanate selected from the group consisting of 2,4-tolylene diisocyanate, diphenylmethane-4,4'-diisocyanate, and hexamethylene diisocyanate is preferred.

[0127] The crosslinking agent is preferably blended in a ratio of 0.01 to 30 parts by weight, and more preferably 0.1 to 20 parts by weight, per 100 parts by weight of the base resin, thereby obtaining an adhesive layer 2 that can reliably exhibit the functions of the crosslinking agent.

[0128] (5) Plasticizers The resin composition may contain a plasticizer, which can improve the flexibility of the adhesive layer 2 when the adhesive strength of the adhesive layer 2 is reduced by the application of energy.

[0129] The plasticizer is not particularly limited, but examples thereof include phthalate ester plasticizers such as DOP (dioctyl phthalate), DBP (dibutyl phthalate), DIBP (diisobutyl phthalate), and DHP (diheptyl phthalate), aliphatic dibasic acid ester plasticizers such as DOA (di-2-ethylhexyl adipate), DIDA (diisodecyl adipate), and DOS (di-2-ethylhexyl sebacate), aromatic carboxylic acid ester plasticizers such as ethylene glycol benzoates, trimellitic acid ester plasticizers such as TOTM (trioctyl trimellitate), and adipate ester plasticizers, and these can be used alone or in combination of two or more.

[0130] The plasticizer is preferably blended in a ratio of 0.1 to 5.0 parts by weight, more preferably 0.5 to 3.0 parts by weight, per 100 parts by weight of the base resin, which can reliably improve the flexibility of the adhesive layer 2.

[0131] (6) Other ingredients The resin composition constituting the adhesive layer 2 may contain at least one of other components such as a conductive material, a tackifier, an antioxidant, an adhesion adjuster, a filler, a colorant, a flame retardant, a softener, an antioxidant, a surfactant, etc.

[0132] The conductive material is not particularly limited as long as it has conductivity, but the same conductive materials as those described above as the conductive material contained in the base material 4 can be used.

[0133] Adding a conductive material to the adhesive layer 2 can also impart an antistatic function to the adhesive layer 2. This effectively suppresses or prevents static electricity from being generated on the semiconductor chip 20 during the dicing process and the pick-up process.

[0134] The tackifier is not particularly limited, but examples thereof include rosin resins, terpene resins, coumarone resins, phenolic resins, aliphatic petroleum resins, aromatic petroleum resins, and aliphatic-aromatic copolymer petroleum resins, and one or more of these may be used in combination.

[0135] By appropriately selecting the type and content of each of the above components, an adhesive layer 2 is obtained that adheres to and supports the semiconductor substrate 7 during the dicing process, and when energy is applied and the adhesive layer hardens, has enough adhesiveness to allow the semiconductor chip 20 to be picked up during the pick-up process.

[0136] The thickness of the adhesive layer 2 is not particularly limited, but is preferably 5 μm to 100 μm, more preferably 5 μm to 50 μm. By setting the thickness of the adhesive layer 2 within this range, an adhesive layer 2 having sufficient adhesion to the semiconductor substrate 7 in the dicing step and sufficient releasability in the pick-up step can be obtained.

[0137] The adhesive layer 2 may be a laminate (multilayer body) formed by laminating a plurality of layers made of different resin compositions.

[0138] Furthermore, the resin composition may be one in which the addition of a curable resin is omitted. That is, the adhesive layer 2 may be one whose adhesive strength does not decrease even when energy is applied.

[0139] As described above, the adhesive tape 100 (dicing tape) having the above-described substrate 4 and adhesive layer 2 is forcibly charged to 5000 [V] in the TD direction under conditions of 23°C and 50% RH, and the time required for the charged voltage to decay to 5 [V] is defined as X [seconds]. Furthermore, when the adhesive tape 100 is stretched 50% in the TD direction under conditions of 23°C and 50% RH, the adhesive tape 100 is forcibly charged to 5000 [V] in the TD direction under conditions of 23°C and 50% RH, and the time required for the charged voltage to decay to 5 [V] is defined as Y [seconds]. It is sufficient for the adhesive tape 100 to satisfy the relationship YX < 1.0 second, but it is preferable for YX < 0.5 second, and it is more preferable for it to satisfy the relationship 0.05 second < YX < 0.3 second. As a result, when the adhesive tape 100 to which the singulated semiconductor chips 20 are attached is radially stretched in the expanding step, it can be said that the amount of change in the tendency of the adhesive tape 100 to become electrified due to the stretching of the adhesive tape 100 is set to be smaller. Therefore, when the singulated semiconductor chips 20 are picked up in a state where they are pushed up by the needles 430 in the pick-up step after the expanding step, the generation of static electricity in the semiconductor chips 20 can be more accurately prevented or suppressed, and the semiconductor chips 20 can be picked up.

[0140] Furthermore, the time period X is preferably 1.0 second or less, and more preferably 0.1 second or more and 0.5 second or less. This means that the adhesive tape 100 is set to be less susceptible to static electricity before the adhesive tape 100 with the individual semiconductor chips 20 attached thereto is radially stretched in the expanding step. This makes it possible to accurately suppress or prevent static electricity from being generated in the semiconductor chips 20 when the semiconductor substrate 7 is cut in the dicing step.

[0141] Furthermore, the time Y is preferably 2.0 seconds or less, and more preferably 0.1 to 0.8 seconds. This means that the adhesive tape 100 is set to be less susceptible to static electricity after the adhesive tape 100 with the individual semiconductor chips 20 attached thereto is radially stretched in the expanding step. Therefore, it is possible to appropriately suppress or prevent static electricity from being generated in the semiconductor chips 20 when the semiconductor chips 20 are picked up in the pick-up step.

[0142] Furthermore, under conditions of 23°C and 50% RH, when the pressure-sensitive adhesive tape 100 is stretched 100% in the TD direction, the pressure-sensitive adhesive tape 100 is forcibly charged to 5000 [V] in the TD direction, and the time taken for the charged voltage to decay to 5 [V] is defined as Z1 [seconds]. This time Z1 [seconds] is preferably 5.0 seconds or less, more preferably 3.0 seconds or less. Furthermore, under conditions of 23°C and 50% RH, when the pressure-sensitive adhesive tape 100 is stretched 250% in the TD direction, the pressure-sensitive adhesive tape 100 is forcibly charged to 5000 [V] in the TD direction, and the time taken for the charged voltage to decay to 5 [V] is defined as Z2 [seconds]. This time Z2 [seconds] is preferably 5.0 seconds or less, more preferably 4.0 seconds or less. As a result, when the adhesive tape 100 to which the singulated semiconductor chips 20 are attached is stretched radially in the expanding step, it can be said that the degree to which the adhesive tape 100 is susceptible to charging due to the stretching of the adhesive tape 100 is reliably set small without changing with the degree of stretching. Therefore, after the expanding step, when the singulated semiconductor chips 20 are picked up in a state where they are pushed up by the needles 430 in the pick-up step, it is possible to pick up the semiconductor chips 20 while more reliably preventing or suppressing the generation of static electricity in the semiconductor chips 20.

[0143] Such an adhesive tape 100 satisfies the requirement that the relational expression (YX) is less than 0.5 seconds, and thus, in a state where a slice of a silicon wafer having a thickness of 0.2 mm and a length of 4 to 6 inches is fixed on the adhesive layer 2 of the adhesive tape 100, the slice is cut so as to reach partway through the thickness direction of the substrate 4, and the slice is divided into individual pieces, forming a plurality of individual pieces each 6 mm in length and width, and then the adhesive layer 2 is exposed to ultraviolet irradiance of 55 W / cm 2 , UV irradiation amount: 200mj / cm 2 After irradiating ultraviolet light under the above conditions, the adhesive tape 100 is stretched 8 mm in the planar direction, and the individual pieces are pushed up 0.4 mm from the substrate 4 side with four pins, each with a tip curvature radius of 100 μm and spaced 4 mm apart, and then pulled out from the opposite side of the substrate 4. Of the 50 individual pieces, the number of pieces showing discharge marks is preferably 3 or less, more preferably 1 or less. This series of evaluations is performed without using an ionizer in order to perform the evaluation under more severe conditions. This allows the individual pieces to be picked up in a state in which static electricity generation in the individual pieces, i.e., the semiconductor chips 20, is more accurately prevented or suppressed.

[0144] Next, the adhesive tape 100 having the above-mentioned configuration can be manufactured, for example, as follows.

[0145] <Adhesive tape manufacturing method> Fig. 6 is a vertical cross-sectional view for explaining a method for producing the adhesive tape shown in Fig. 5. In the following explanation, the upper side in Fig. 6 will be referred to as "top" and the lower side as "bottom".

[0146] [1B] First, a substrate 4 is prepared (see FIG. 6(a)). The method for producing the substrate 4 is not particularly limited, and examples thereof include common molding methods such as extrusion molding methods such as a calendar method, an inflation extrusion method, and a T-die extrusion method, and a wet casting method. When the substrate 4 is formed as a laminate, molding methods such as a co-extrusion method and a dry lamination method are used as the method for producing the substrate 4 having such a configuration.

[0147] The substrate 4 can be used without stretching, or may be subjected to uniaxial or biaxial stretching treatment as required.

[0148] Before forming the base material 4 into a sheet, the raw materials are kneaded using various kneading machines or the like. In this case, the kneading temperature is preferably above 200°C, more preferably 210°C or higher, and even more preferably 220°C or higher. This allows the raw materials to be kneaded more uniformly, and the antistatic agent to be more uniformly dispersed in the base material 4. As a result, a pressure-sensitive adhesive tape 100 that satisfies the above-mentioned relational expression can be easily produced.

[0149] The upper limit of the kneading temperature is set appropriately depending on the raw materials, but is preferably 350° C. or less, and more preferably 300° C. or less, which can prevent the raw materials from being denatured by heat.

[0150] Furthermore, the kneading time at the above kneading temperature is preferably 3 minutes or more, and more preferably 4 minutes or more. This allows the raw materials to be kneaded more uniformly, and the antistatic agent to be more uniformly dispersed in the base material 4, although this depends on the kneading temperature. As a result, the pressure-sensitive adhesive tape 100 that satisfies the above-mentioned relational expression can be easily manufactured.

[0151] The upper limit of the kneading time is preferably 20 minutes or less, more preferably 10 minutes or less, which can prevent the raw materials from being denatured by heat, although this depends on the kneading temperature.

[0152] As the kneader, for example, a screw kneading extruder or the like is preferably used, and a twin-screw kneading extruder is more preferably used, which allows the raw materials to be kneaded more uniformly.

[0153] The rotation speed of the screw in the screw-type kneading extruder is not particularly limited, but is preferably 5 rpm or more and 100 rpm or less, more preferably 10 rpm or more and 90 rpm or less, and even more preferably 20 rpm or more and 80 rpm or less. This optimizes the shear rate of the raw materials by the screw, allowing the raw materials to be particularly uniformly kneaded. As a result, the uniform dispersion of the antistatic agent in the substrate 4 can be particularly improved, and even when the stretching ratio is as high as 50% or more, a pressure-sensitive adhesive tape 100 that satisfies the above-mentioned relationship can be easily produced.

[0154] [2B] Next, an adhesive layer 2 is formed on the upper surface of the substrate 4 (see FIG. 6(b)). The surface (upper surface) of the substrate 4 may be subjected to a surface treatment such as corona treatment, chromic acid treatment, matte treatment, ozone exposure treatment, flame exposure treatment, high-voltage shock exposure treatment, ionizing radiation treatment, primer treatment, or anchor coat treatment in order to improve adhesion between the substrate 4 and the adhesive layer 2.

[0155] The adhesive layer 2 can also be obtained by applying or spraying onto the substrate 4 a liquid material in the form of a varnish, which is made by dissolving the resin composition that is the constituent material of the adhesive layer 2 in a solvent, and then evaporating the solvent.

[0156] The solvent is not particularly limited, but examples thereof include methyl ethyl ketone, acetone, toluene, ethyl acetate, dimethyl formaldehyde, etc., and one or more of these can be used in combination.

[0157] Furthermore, the liquid material can be applied or sprayed onto the substrate 4 using methods such as die coating, curtain die coating, gravure coating, comma coating, bar coating, and lip coating.

[0158] [3B] Next, a portion of the adhesive layer 2 formed on the base material 4 is removed so as to separate the central side and the outer periphery of the adhesive layer 2. Specifically, a portion of the adhesive layer 2 is removed in a circular shape so as to leave the base material 4. This separates the adhesive layer 2 into a central portion 122 and an outer periphery 121 (see FIG. 6(c)).

[0159] An example of a method for removing a portion of the adhesive layer 2 in a circular shape is to punch out a portion surrounding the area to be removed, and then remove the adhesive layer 2 located in the punched-out area.

[0160] The region to be removed can be punched out using, for example, a method using a roll-shaped mold or a method using a press mold. Among these, the method using a roll-shaped mold, which allows continuous production of the pressure-sensitive adhesive tape 100, is preferred.

[0161] The shape of the punched-out portion of the adhesive layer 2 may be any shape as long as it allows the outer periphery 121 of the adhesive layer 2 to be fixed to the wafer ring. Specifically, in addition to a circular shape, it may be an elliptical shape, an oval shape such as a bale shape, a rectangular shape, a polygonal shape such as a pentagon, or the like.

[0162] [4B] Next, the separator 1 is laminated on the adhesive layer 2 formed on the substrate 4. This results in an adhesive tape 100 in which the adhesive layer 2 is covered with the separator 1 (see FIG. 6(d)).

[0163] The method for laminating the separator 1 on the adhesive layer 2 is not particularly limited, and examples thereof include a lamination method using a roll and a lamination method using a press. Among these, the lamination method using a roll is preferred from the viewpoint of productivity, which allows for continuous production.

[0164] The separator 1 is not particularly limited, but examples thereof include a polypropylene film, a polyethylene film, and a polyethylene terephthalate film.

[0165] The surface of the separator 1 may be subjected to a release treatment. Examples of the release treatment include coating with a release agent, forming fine irregularities, etc. Examples of the release agent include silicone-based, alkyd-based, and fluorine-based agents.

[0166] In the method for manufacturing a semiconductor device using the adhesive tape 100 described above, the adhesive tape 100 from which the separator 1 has been peeled off is used.

[0167] Furthermore, when peeling the separator 1 from the adhesive layer 2 covered with the separator 1, it is preferable to peel the separator 1 at an angle of 90° or more and 180° or less with respect to the surface of the adhesive layer 2. This can prevent peeling from occurring at any place other than the interface between the adhesive layer 2 and the separator 1.

[0168] Although the pressure-sensitive adhesive tape of the present invention has been described above, the present invention is not limited thereto.

[0169] For example, any component capable of exerting the same function may be added to each layer of the pressure-sensitive adhesive tape of the present invention. Furthermore, the substrate may have an antistatic layer provided on the surface opposite to the pressure-sensitive adhesive layer.

[0170] Furthermore, the configuration of each layer provided in the pressure-sensitive adhesive tape may be replaced with any other layer that can exert the same function, or any other layer may be added.

[0171] Furthermore, in a semiconductor device formed using an adhesive tape, the molded portion may be omitted.

[0172] The adhesive tape may also be used to process substrates other than semiconductor substrates, such as glass substrates such as soda-lime glass, borosilicate glass, and quartz glass, ceramic substrates such as alumina, silicon nitride, and titanium oxide, resin material substrates such as acrylic, polycarbonate, and rubber, and metal material substrates. [Example]

[0173] Next, specific examples of the present invention will be described. However, the present invention is not limited to the descriptions in these examples.

[0174] 1. Raw material preparation First, the raw materials used in the production of the pressure-sensitive adhesive tapes of each Example and Comparative Example are shown below.

[0175] (Polyolefin resin 1) As polyolefin resin 1, polypropylene (homo PP, manufactured by Sumitomo Chemical Co., Ltd., "FS2011DG-2", MFR2.0) was prepared.

[0176] (Elastomer 1) As elastomer 1, a hydrogenated styrene-based thermoplastic elastomer (SEBS, manufactured by Asahi Kasei Chemicals Corporation, "H1062", styrene content 18% by weight) was prepared.

[0177] (Conductive Material 1) A polyether-based antistatic agent (Pelectron PVL, manufactured by Sanyo Chemical Industries, Ltd.) was prepared as the conductive material 1. The conductive material 1 is a material containing a polyolefin / polyether copolymer as a main component.

[0178] (Conductive Materials 2) As the conductive material 2, a polyether-based antistatic agent (manufactured by Sanyo Chemical Industries, Ltd., "Pelectron AS") was prepared. The conductive material 2 is a material whose main component is a polyamide / polyether copolymer.

[0179] (Conductive Materials 3) Polythiophene (Arakawa Chemical Industries, Ltd., "Aracoat AS625") was prepared as the conductive material 3. In addition to the conductive material, AS625 contains an acrylic resin as a polymer binder.

[0180] (Base Resin 1) As the base resin 1, an acrylic copolymer was prepared by mixing at least two of butyl acrylate, butyl methacrylate, 2-ethylhexyl acrylate, acrylic acid, 2-hydroxyethyl acrylate, N,N-dimethylacrylamide, and vinyl acetate, and subjecting the mixture to solution polymerization in a toluene solvent by a conventional method.

[0181] The glass transition temperature and weight average molecular weight of base resin (acrylic copolymer) 1 were as shown below. Base resin 1 (glass transition temperature: -14°C, weight average molecular weight: 500,000)

[0182] (curable resin 1) As the curable resin 1, dipentaerythritol hexaacrylate (manufactured by Daicel Allnex Corporation, product number: DPHA), which is an esterification product of (meth)acrylic acid and polyhydric alcohol, was prepared.

[0183] (Crosslinker 1) As a crosslinking agent 1, polyisocyanate (manufactured by Tosoh Corporation, product number: Coronate L) was prepared.

[0184] (Photopolymerization initiator 1) As a photopolymerization initiator 1, benzyl dimethyl ketal (manufactured by Tokyo Chemical Industry Co., Ltd.) was prepared.

[0185] 2. Preparation of Adhesive Tape [Example 1] A resin composition containing polyolefin resin 1 (50.0 wt%), elastomer 1 (30.0 wt%), and antistatic agent 1 (20.0 wt%) was extruded using an extruder to produce a 150.0 μm thick substrate 4. The kneading temperature for substrate 4 was 230°C, the kneading time was 5 minutes, and the screw rotation speed in the kneader was 50 rpm.

[0186] Next, a liquid material containing a resin composition containing base resin 1 (100.0 parts by weight), curable resin 1 (100.0 parts by weight), crosslinker 1 (5.0 parts by weight), and photopolymerization initiator 1 (5.0 parts by weight) was prepared. This liquid material was bar-coated onto substrate 4 so that the thickness of adhesive layer 2 after drying would be 10.0 μm, and then dried at 80° C. for 1 minute to form adhesive layer 2 on the upper surface (one side) of substrate 4, thereby obtaining adhesive tape 100 of Example 1.

[0187] [Examples 2 to 6, Comparative Examples 1 to 4] The adhesive tapes of Examples 2 to 6 and Comparative Examples 1 to 4 were produced in the same manner as in Example 1, except that the constituent materials contained in the resin composition used to form the substrate 4 and the constituent materials contained in the resin composition used to form the adhesive layer 2 were those shown in Table 1, and the contents of the constituent materials were changed as shown in Table 1 to form the substrate 4 and adhesive layer 2 with the thicknesses shown in Table 1. The kneading temperature, kneading time, and screw rotation speed for the substrate 4 are also shown in Table 1.

[0188] Furthermore, for the conductive material 3 of Comparative Example 1, the material was bar coated on the surface of the substrate 4 opposite the adhesive layer 2 so that the thickness of the antistatic layer after drying would be 0.3 μm, and then dried at 80°C for 10 minutes to form an antistatic layer on the other surface of the substrate 4.

[0189] Furthermore, for the conductive material 3 of Comparative Example 2, the material was bar-coated on the surface of the substrate 4 opposite the adhesive layer 2 so that the thickness of the antistatic layer after drying would be 0.5 μm, and then dried at 80°C for 10 minutes to form an antistatic layer on the other surface of the substrate 4.

[0190] [Example 7] The adhesive tape of Example 7 was produced in the same manner as in Example 1, except that the substrate 4 was formed as follows.

[0191] Specifically, polyolefin resin 1 (60.0 wt%) and elastomer 1 (40.0 wt%) were kneaded in a twin-screw kneader to prepare kneaded product 1, and polyolefin resin 1 (50.0 wt%), elastomer 1 (30.0 wt%), and antistatic agent 1 (20.0 wt%) were kneaded in a twin-screw kneader to prepare kneaded product 2. These kneaded products 1 and 2 were then extruded into a film using a co-extruder to produce substrate 4, which was a laminate consisting of a 50.0 μm-thick first layer derived from kneaded product 1 and a 50.0 μm-thick second layer derived from kneaded product 2. The kneading temperature, kneading time, and screw rotation speed for both kneaded product 1 and kneaded product 2 were adjusted as shown in Table 1. In the next step, adhesive layer 2 was formed on substrate 4, but only on the first layer side of the first and second layers.

[0192] [Example 8] An adhesive tape of Example 8 was produced in the same manner as in Example 7, except that the second layer of the substrate 4 was formed to have the thickness shown in Table 1.

[0193] 3. Evaluation The resulting pressure-sensitive adhesive tapes of each of the Examples and Comparative Examples were evaluated by the following methods.

[0194] 3-1. Measurement of the decay time of the charged voltage after forcibly charging the substrate 4 <1A> First, for each of the pressure-sensitive adhesive tapes 100 of the Examples and Comparative Examples, test pieces measuring 60 mm wide x 150 mm long were prepared. Under conditions of 23°C and 50% RH, a charge decay data analyzer ("STATIC DECAY METER MODEL 406C" manufactured by electro-tech systems, inc.) was set so that a voltage was applied in the TD direction to the surface of the substrate 4 of each of the test pieces opposite the adhesive layer 2. The pressure-sensitive adhesive tape 100 was then forcibly charged to 5000 [V], and the time it took for the charged voltage to decay to 5 [V] was measured as the decay time X [seconds] in an unstretched state (stretch ratio 0%).

[0195] <2A> Next, for each of the pressure-sensitive adhesive tapes 100 of the Examples and Comparative Examples, a test piece measuring 60 mm in width and 150 mm in length was prepared. With a chuck distance of 100 mm, the initial pressure-sensitive adhesive tape 100 (test piece) was stretched 50% from its initial length along the TD at a stretching rate of 50 mm / min under conditions of 23°C and 50% RH. In this state, the pressure-sensitive adhesive tape 100 was forcibly charged to 5,000 [V] using the same charge decay data analyzer as described above. Thereafter, the time taken for the charged voltage to decay to 5 [V] was measured as the decay time Y [seconds] when the tape was stretched 50% (stretching ratio 50%).

[0196] <3A> Next, for each of the pressure-sensitive adhesive tapes 100 of the Examples and Comparative Examples, a test piece measuring 60 mm wide x 150 mm long was prepared. With a chuck distance of 100 mm, the initial pressure-sensitive adhesive tape 100 (test piece) was stretched to 100% along the TD from its initial length at a stretching rate of 50 mm / min under conditions of 23°C and 50% RH. In this state, the pressure-sensitive adhesive tape 100 was forcibly charged to 5,000 [V] using the same charge decay data analyzer as described above. Thereafter, the time taken for the charged voltage to decay to 5 [V] was measured and defined as the decay time Z1 [seconds] when the tape was stretched to 100% (stretching ratio 100%).

[0197] <4A> Next, for each of the pressure-sensitive adhesive tapes 100 of the Examples and Comparative Examples, a test piece measuring 60 mm in width and 150 mm in length was prepared. With a chuck distance of 100 mm, the initial pressure-sensitive adhesive tape 100 (test piece) was stretched along the TD by 250% from its initial length at a stretching rate of 50 mm / min under conditions of 23°C and 50% RH. In this state, the pressure-sensitive adhesive tape 100 was forcibly charged to 5,000 [V] using the same charge decay data analyzer as above. Thereafter, the time taken for the charged voltage to decay to 5 [V] was measured as the decay time Z2 [seconds] when the tape was stretched by 250% (stretching ratio 250%).

[0198] <5A> Furthermore, based on the measured decay times X and Y, the magnitude of the relational expression (YX) was determined.

[0199] 3-2. Evaluation of discharge marks observed on singulated objects <1B> A piece of silicon wafer (manufactured by SUMCO Corporation) with a thickness of 0.2 mm and a length of 4 inches was fixed on the adhesive layer 2 of the adhesive tape 100, and the piece was cut so as to reach partway through the thickness direction of the substrate 4, and the piece was divided into individual pieces, thereby forming multiple silicon chips (divided pieces) with a length and width of 6 mm. Thereafter, the adhesive layer 2 was exposed to ultraviolet light with an irradiance of 55 W / cm 2 , UV irradiation amount: 200mj / cm 2 The adhesive layer 2 was cured by applying energy by irradiating it with ultraviolet light under the conditions of (a).

[0200] <2B> Next, while the adhesive tape 100 was stretched 8 mm in the planar direction, the individual pieces were pushed up 0.4 mm from the substrate 4 side using four pins with a tip curvature radius of 100 μm and spaced 4 mm apart, and the silicon chips were picked up by suction using a vacuum collet.

[0201] By going through the above-described steps <1B> and <2B>, picking up of 50 silicon chips was repeatedly carried out for each of the pressure-sensitive adhesive tapes 100 of the Examples and Comparative Examples.

[0202] Then, for the adhesive tape 100 of each example and each comparative example, the silicon chips obtained were visually inspected for the presence or absence of discharge marks on the silicon chips, and evaluated according to the following criteria.

[0203] (Evaluation criteria) ◎: No discharge traces were observed for 50 or 49 silicon chips ○: No discharge traces were observed for 48 or 47 silicon chips △: No discharge traces were observed for 40 or more but less than 47 silicon chips ×: No discharge traces were observed for less than 40 silicon chips The evaluation results obtained as described above are shown in Table 1.

[0204] [Table 1]

[0205] As shown in Table 1, the adhesive tape 100 of each embodiment satisfies the relationship YX < 1.0 seconds, which means that the amount of change in the tendency of the adhesive tape 100 to become charged due to stretching the adhesive tape 100 is set to be small.As a result, when picking up a silicon chip, the generation of static electricity in the silicon chip is suppressed, and the formation of discharge marks on the silicon chip is suppressed.

[0206] In contrast, the adhesive tapes of each comparative example did not satisfy the relationship YX < 1.0 seconds, and as a result, the amount of change in the ease with which the adhesive tape 100 becomes charged due to the stretching of the adhesive tape 100 increased, so that when the silicon chip was picked up, static electricity was generated in the silicon chip, and as a result, discharge marks were observed on the silicon chip. [Explanation of symbols]

[0207] 1 Separator 2 Adhesive layer 4 Base material 7. Semiconductor substrate 9 Wafer ring 10 Semiconductor devices 17 Mold section 20 Semiconductor chips 21 terminals 23 Semiconductor chip body 30 Interposer 41 terminals 70 Bump 80 Sealing layer 81 Connection 85 Solder bumps 100 adhesive tape 121 Outer periphery 122 Center 200 Dicer Table 300 tables 310 Center 320 Outer periphery 400 stages 410 Ejector Head 430 Needle

Claims

1. An adhesive tape comprising a substrate and an adhesive layer containing an adhesive base resin as a main material and laminated on one surface of the substrate, the adhesive tape being used for temporarily fixing at least one of a substrate and a component, the substrate includes a resin material and a conductive material, Under the conditions of 23°C and 50% RH, the adhesive tape is forcibly charged to 5000 [V] in the TD direction, and the time required for the charged voltage to decay to 5 [V] is defined as X [seconds]. When the adhesive tape is stretched 50% in the TD direction, the adhesive tape is forcibly charged to 5000 [V] in the TD direction, and the time it takes for the charged voltage to decay to 5 [V] is defined as Y [seconds], An adhesive tape characterized by satisfying Y-X < 1.0 seconds.

2. The adhesive tape according to claim 1 , wherein the time X [seconds] is 1.0 seconds or less.

3. 3. The adhesive tape according to claim 2, wherein the adhesive tape is stretched 100% in the TD direction, and the adhesive tape is forcibly charged to 5000 V in the TD direction, and the time required for the charged voltage to decay to 5 V is defined as Z1 seconds, and the time Z1 seconds is 5.0 seconds or less.

4. 4. The adhesive tape according to claim 3, wherein the adhesive tape is stretched 250% in the TD direction, and the adhesive tape is forcibly charged to 5000 V in the TD direction, and the time Z2 [seconds] is 5.0 seconds or less when the time it takes for the charged voltage to decay to 5 V thereafter is defined as Z2 [seconds].

5. 2. The adhesive tape according to claim 1, wherein the conductive material is at least one of a conductive polymer, a permanently antistatic polymer (IDP), a metal oxide material, and a carbon material.

6. 6. The pressure-sensitive adhesive tape according to claim 5, wherein the resin material is an ester polymer, a styrene polymer, an olefin polymer, a carbonate polymer, or a copolymer containing at least one of these polymers.

7. The adhesive tape according to claim 1 , wherein the base resin is an acrylic resin.

8. The pressure-sensitive adhesive tape according to claim 1 , wherein the content of the conductive material in the substrate is 5.0% by weight or more and 45.0% by weight or less.

9. The adhesive tape according to claim 7, wherein the adhesive layer further contains a curable resin that is cured by the application of energy, and the application of energy reduces the adhesive strength of the adhesive layer to at least one of the substrate and the component temporarily fixed on the adhesive layer.

10. The adhesive tape according to claim 1, wherein the substrate has a thickness of 30 μm or more and 200 μm or less.

11. The adhesive tape according to claim 10, wherein the adhesive layer has a thickness of 5 μm or more and 100 μm or less.

12. 2. The adhesive tape according to claim 1, which is used when the substrate is fixed on the adhesive layer, the adhesive tape is cut from the substrate to reach partway in the thickness direction of the base material to separate the substrate into individual pieces to form the plurality of components, and then the adhesive tape is stretched in the planar direction while the components are pushed up from the base material side and pulled out from the opposite side of the base material, thereby detaching the components from the adhesive layer.

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