Electromagnetic compound lens and charged particle optical system comprising such lens

Abstract

To provide an electromagnetic compound lens.SOLUTION: An electromagnetic compound lens may be configured to focus a charged particle beam. The compound lens may include an electrostatic lens provided on a secondary optical axis and a magnetic lens also provided on the secondary optical axis. The magnetic lens may include a permanent magnet. A charged particle optical system may include a beam separator configured to separate a plurality of beamlets of a primary charged particle beam generated by a source along a primary optical axis from secondary beams of secondary charged particles. The system may include a secondary imaging system configured to focus the secondary beams onto a detector along the secondary optical axis. The secondary imaging system may include the compound lens.SELECTED DRAWING: Figure 4A

Description

[Technical Field]

[0001] (CROSS-REFERENCE TO RELATED APPLICATIONS)

[0001] This application claims priority to U.S. Application No. 62 / 768,799, filed November 16, 2018, which is incorporated herein by reference in its entirety.

[0002] FIELD OF THE INVENTION

[0002] Embodiments provided herein relate to charged particle optical systems applicable to charged particle instruments that use one or more charged particle beams, such as electron microscope instruments that utilize one or more electron beams. [Background technology]

[0003]

[0003] In the integrated circuit (IC) manufacturing process, circuit components can be inspected to ensure they are manufactured according to design and are free of defects. Pattern defects, unwanted particles (residues), etc. can appear on wafers or masks during manufacturing, which can reduce yield. For example, unwanted particles can become a problem in patterns with smaller critical feature dimensions that are employed to meet increasingly advanced IC chip performance requirements.

[0004]

[0004] Charged particle (e.g., electron) beam microscopes, such as scanning electron microscopes (SEMs) and transmission electron microscopes (TEMs), are capable of sub-nanometer resolution and serve as viable tools for inspecting IC components with sub-100 nanometer feature sizes. In an SEM tool, a relatively high-energy primary electron beam is decelerated to impinge on a sample at a relatively low incident energy and focused to form a probe spot thereon. This focused probe spot of primary electrons generates secondary electrons from the surface. By scanning the probe spot over the sample surface and collecting the secondary electrons, a pattern inspection tool can obtain an image of the sample surface.

[0005]

[0005] Optical elements such as lenses and deflectors in single-beam or multi-beam inspection tools can introduce dispersion or aberrations into the beams used in inspection. For example, a primary electron beam may be generated along the optical axis, with a detector located off-axis for collecting secondary electrons. In inspection systems including multiple primary beams or multiple secondary beams, a beam separator can be used to separate the secondary electron beams from the primary beam and direct the secondary electron beams toward the off-axis detector. The beam separator may include a magnetic deflector used to electromagnetically deflect electrons, which can introduce dispersion into the beam passing through the beam separator. Furthermore, lenses can introduce aberrations that are affected by their size, structure, operating conditions, and placement within the optical system. Dispersion and aberrations, among other effects, can reduce the resolution for reconstructing an image of the inspected sample surface. Summary of the Invention

[0006]

[0006] Embodiments of the present disclosure may provide an electromagnetic compound lens. The compound lens may include an electrostatic lens and a magnetic lens. The magnetic lens may include a permanent magnet. The focusing power of the compound lens can be changed by varying the focusing power of the electrostatic lens. Embodiments of the present disclosure may provide a charged particle optical system. The system may include a beam separator configured to separate multiple beamlets of a primary charged particle beam generated by a source and traveling along a primary optical axis from multiple secondary charged particle beams generated from a sample by the multiple beamlets. The secondary charged particle beam may travel along a secondary optical axis after passing through the beam separator. The system may include a secondary imaging system configured to focus the secondary charged particle beam along the secondary optical axis onto multiple detection elements of a detector. The secondary imaging system may include a zoom lens. The zoom lens may be located near the beam separator and include the electromagnetic compound lens. The compound lens may be the first lens in the zoom lens from the entrance side of the secondary imaging system when counted from the beam separator.

[0007]

[0007] Illustrative benefits and advantages of the present invention will become apparent from the following description taken in conjunction with the accompanying drawings, in which specific embodiments of the invention are shown, by way of example, by way of illustration. [Brief explanation of the drawings]

[0008] [Figure 1A] FIG. 1 is a schematic diagram illustrating an exemplary electron beam inspection (EBI) system according to an embodiment of the present disclosure. [Figure 1B]

[0009] 1B illustrates an exemplary electron beam tool that may be part of the electron beam inspection system of FIG. 1A. [Figure 1C]

[0010] 1 illustrates an exemplary secondary imaging system according to an embodiment of the present disclosure. [Figure 2A]

[0011] 1 illustrates an exemplary configuration of an electromagnetic compound lens that may be part of a secondary imaging system according to an embodiment of the present disclosure. [Figure 2B]

[0011] An exemplary configuration of an electromagnetic compound lens that may be part of a secondary imaging system according to an embodiment of the present disclosure is shown. [Figure 2C]

[0011] An exemplary configuration of an electromagnetic compound lens that may be part of a secondary imaging system according to an embodiment of the present disclosure is shown. [Figure 3A]

[0012] 10 illustrates another exemplary configuration of an electromagnetic compound lens, according to an embodiment of the present disclosure. [Figure 3B]

[0012] Another exemplary configuration of an electromagnetic compound lens is shown, according to an embodiment of the present disclosure. [Figure 4A]

[0013] 1 illustrates an exemplary configuration of lenses that may be used in a secondary imaging system of an EBI system, according to an embodiment of the present disclosure. [Figure 4B]

[0014] 10A-10C illustrate other exemplary configurations of lenses and field shield tubes that may be used in the primary projection system and secondary imaging system, respectively, of an EBI system, according to embodiments of the present disclosure. [Figure 4C] 10 illustrates another exemplary configuration of lenses and field shield tubes that may be used in the primary projection system and secondary imaging system, respectively, of an EBI system according to an embodiment of the present disclosure. [Figure 5]

[0015] 1 is a flowchart illustrating an exemplary method for constructing an electromagnetic compound lens, according to an embodiment of the present disclosure. [Figure 6]

[0016] 1 is a flowchart illustrating an exemplary method of configuring a charged particle beam device, according to an embodiment of the present disclosure. DETAILED DESCRIPTION OF THE INVENTION

[0009]

[0019] Reference will now be made in detail to exemplary embodiments, examples of which are illustrated in the accompanying drawings. The following description refers to the accompanying drawings in which identical numbers in different drawings represent identical or similar elements unless otherwise indicated. The implementations described in the following description of exemplary embodiments do not represent all implementations in accordance with the present invention. These implementations are merely examples of systems, apparatus, and methods in accordance with aspects related to the present invention as recited in the appended claims. Relative dimensions of elements in the drawings may be exaggerated for clarity.

[0010]

[0020] Increasing the computing power of electronic devices while shrinking their physical size can be achieved by significantly increasing the packing density of circuit components such as transistors, capacitors, and diodes on IC chips. For example, in a smartphone, an IC chip (the size of a thumbnail) can contain over two billion transistors, each one thousandth the size of a human hair. Not surprisingly, semiconductor IC manufacturing is a complex process involving hundreds of individual steps. An error in even one step can dramatically affect the functionality of the final product. Even a single "killer defect" can cause device failure. The goal of a manufacturing process is to improve the overall yield of the process. For example, for a 50-step process to achieve a 75% yield, each individual step must have a yield greater than 99.4%. If the individual step yield is 95%, the overall process yield drops to 7%.

[0011]

[0021] Ensuring the ability to detect defects with high accuracy and resolution while maintaining high throughput (e.g., defined as the number of wafers processed per hour) is becoming increasingly important. High process yields and high wafer throughput can be affected by the presence of defects, especially when operator intervention is involved. Therefore, the detection and identification of micro- and nano-sized defects by inspection tools (e.g., SEM) is crucial to maintaining high yields and low costs.

[0012]

[0022] Inspection tools using charged particle beams can achieve high resolution and high throughput. In some inspection tools used to inspect samples, a primary beam can be generated from a charged particle source. For example, as shown in FIG. 1B, a primary beam 102 generated from a source 101 travels along a primary optical axis 100_1, and one or more beamlets (e.g., 102_1, 102_2, and 102_3) of the primary beam 102 impinge on a sample 1. One or more secondary beams of secondary charged particles can then be generated from the one or more beamlets, which can travel in opposite directions along the primary optical axis. Finally, the one or more secondary beams of secondary charged particles can reach a detector, such as an electron detection device 140M, where an imaging signal of the sample is generated.

[0013]

[0023] To prevent detection of the secondary beams from interfering with one or more beamlets, the detector can be located away from the primary optical axis, such as along optical axis 150_1. Accordingly, a beam separator, such as element 160, can be provided on the primary optical axis to redirect one or more secondary beams toward the detector. Thus, one or more beamlets may reach the sample after passing through the beam separator without being redirected, and one or more secondary beams may reach the detector after being redirected while passing through the beam separator.

[0014]

[0024] Although a beam separator can selectively redirect a beam, one effect of using a beam separator is the potential for dispersion of the beam passing through it. Dispersion can have a negative effect on the beam size and associated imaging quality. Because a beam separator can affect both the beamlets of the primary beam and the secondary beams with dispersion, which increases with the separation angle between the primary and secondary beams, the beam separator's operating parameters can be set to reduce the separation angle. As an example, in FIG. 1B , the beam separator 160 can be operated to deflect secondary beams, such as secondary electron beam 102_1se, by a small angle α toward the electron detection device 140M while not deflecting the beamlets (102_1, 102_2, 102_3). The angle α is the separation angle. However, this can limit the space available within the inspection tool for arranging electron-optical elements, such as a secondary imaging system used to project the secondary beams onto a detector. According to an embodiment of the present application, some elements of the inspection tool, such as lens 151-11A shown in FIG. 4A, can be provided within the limited space between the primary optical axis 100_1 and the secondary optical axis 150_1.

[0015]

[0025] The secondary beam passes through various lenses on its way to the detector. For example, as shown in FIG. 1B , the secondary beam passes through a secondary imaging system 150, which may include one or more lenses. These lenses can introduce aberrations into the secondary beam passing through them. Some methods for reducing lens aberrations include increasing the size of the lens, using a “positive mode” in the case of electrostatic lenses, or using magnetic lenses. However, increasing the size of the lens or using magnetic lenses requires a large amount of space available within the inspection tool to accommodate the lens. Additionally, the positive mode requires high voltages, which can increase the risk of arcing, especially in tight spaces where electrodes with large voltage differences may be close to each other.

[0016]

[0026] Thus, there are conflicting objectives in an inspection tool: minimizing the effects of dispersion while minimizing aberrations. Because both dispersion and aberrations can degrade imaging quality, it is desirable to reduce dispersion and aberrations simultaneously. Furthermore, because deleterious effects such as dispersion and aberrations can propagate throughout an optical system, it is desirable to reduce such effects as early as possible in the optical system of an inspection tool.

[0017]

[0027] Additionally, some lenses in optical systems may use electromagnets. An electromagnet is a type of magnet that includes a coil and a magnetic yoke covering the coil. A magnetic field is generated by passing a current through the coil, and the magnetic yoke amplifies the magnetic field and directs it so that it leaks through the non-magnetic gap between the two pole pieces of the yoke. When used to focus a beam, magnetic fields typically produce smaller aberrations than comparable electrostatic fields. Therefore, lenses that generate magnetic fields, or a combination of magnetic and electrostatic fields, can be beneficial for applications in inspection tools. If a lens is required to be adjustable to accommodate a wide variety of focusing conditions, it is necessary to be able to change either or both the magnetic and electrostatic fields. Generating a magnetic field using an electromagnet requires a power source that continuously provides power to the electromagnet's coil to maintain the magnetic field, which can result in a bulky and complex design.

[0018]

[0028] Furthermore, the coils of an electromagnet generate heat, which can have a negative effect on the stability of the magnetic lens and the associated imaging quality. Some aspects of the present application may use permanent magnets, which can avoid some of the problems associated with electromagnets. For example, compared to electromagnets, permanent magnets occupy less space, may generate less heat, and do not require connections to a driver. Therefore, permanent magnets may be suitable for placement in high-voltage environments.

[0019]

[0029] Some embodiments of the present disclosure can reduce or eliminate the effects of dispersion and aberrations in an inspection tool. For example, a beam separator can be configured to deflect secondary beams by a small amount, providing an electromagnetic compound lens where available space is limited. The compound lens can include a magnetic portion and an electrostatic portion. The magnetic portion can include a permanent magnet. The focusing force of the compound lens can be provided in part by the magnetic portion and in part by the electrostatic portion. An adjustable portion of the focusing force can be provided by the electrostatic portion. The magnetic portion can be useful for reducing aberrations, while the adjustability can be achieved by the electrostatic portion. The electrostatic portion can be operated in a positive mode, which can also be useful for reducing aberrations. This can improve the imaging resolution of the inspection tool.

[0020]

[0030] Without limiting the scope of the present disclosure, the descriptions and drawings of the embodiments may typically refer to the use of electron beams. However, the embodiments are not intended to limit the invention to a particular charged particle. For example, the systems and methods for beam formation are applicable to photons, x-rays, ions, and the like. Furthermore, the term "beam" may refer to, among other things, a primary electron beam, a primary electron beamlet, or a secondary electron beam.

[0021]

[0031] As used herein, unless expressly stated otherwise, the term "or" includes all possible combinations unless impracticable. For example, if a component is described as including A or B, the component may include A or B, or A and B, unless expressly stated otherwise or impracticable. As a second example, if a component is described as including A, B, or C, the component may include A or B or C, or A and B, or A and C, or B and C, or A, B, and C, unless expressly stated otherwise or impracticable.

[0022]

[0032] Reference is now made to Figure 1A, which illustrates an exemplary electron beam inspection (EBI) system 10 according to an embodiment of the present disclosure. As shown in Figure 1A, the EBI system 10 includes a main chamber 11, a load / lock chamber 20, an electron beam tool 100, and an equipment front end module (EFEM) 30. The electron beam tool 100 is disposed within the main chamber 11.

[0023]

[0033] The EFEM 30 includes a first loading port 30a and a second loading port 30b. The EFEM 30 may also include one or more additional loading ports. The first loading port 30a and the second loading port 30b may, for example, receive a wafer FOUP (front opening unified pod) containing a wafer to be inspected (e.g., a semiconductor wafer or a wafer made of one or more other materials) or a sample (wafers and samples may be collectively referred to herein as "wafers"). One or more robotic arms (not shown) within the EFEM 30 may transfer the wafer to the load / lock chamber 20.

[0024]

[0034] The load / lock chamber 20 is connected to a load / lock vacuum pumping system (not shown), which removes gas molecules from the load / lock chamber 20 to achieve a first pressure below atmospheric pressure. After the first pressure is reached, one or more robot arms (not shown) can transfer the wafer from the load / lock chamber 20 to the main chamber 11. The main chamber 11 is connected to a main chamber vacuum pumping system (not shown), which removes gas molecules from the main chamber 11 to achieve a second pressure below the first pressure. After the second pressure is reached, the wafer is inspected by the electron beam tool 100. The electron beam tool 100 can be a single-beam system or a multi-beam system. A controller 19 is electronically connected to the electron beam tool 100. While the controller 19 is shown in FIG. 1A outside of the structure including the main chamber 11, the load / lock chamber 20, and the EFEM 30, it will be appreciated that the controller 19 may be part of this structure.

[0025]

[0035] It should be noted that while this disclosure provides an example in which the main chamber 11 houses an electron beam inspection tool, aspects of the disclosure in its broadest sense are not limited to chambers housing electron beam inspection systems. It will be appreciated that the principles discussed herein can also be applied to other tools that operate under a second pressure.

[0026]

[0036] FIG. 1B illustrates an exemplary electron beam tool 100A that may be part of the EBI system of FIG. 1A. The electron beam tool 100A (also referred to herein as “apparatus 100A”) includes an electron source 101, a gun aperture plate 171, a condenser lens 110, a source conversion unit 120, a primary projection system 130, a secondary imaging system 150, and an electron detection device 140M. The primary projection system 130 may include an objective lens 131. A sample 1 having a surface 7 may be provided on a movable stage (not shown). The electron detection device 140M may include multiple detection elements 140_1, 140_2, and 140_3. A beam separator 160 and a deflection scanning unit 132 may be disposed within the primary projection system 130.

[0027]

[0037] The electron source 101, the gun aperture plate 171, the condenser lens 110, the source conversion unit 120, the beam separator 160, the deflection scanning unit 132, and the primary projection system 130 may be aligned with a primary optical axis 100_1 of the apparatus 100A. The secondary imaging system 150 and the electron detection device 140M may be aligned with a secondary optical axis 150_1 of the apparatus 100A.

[0028]

[0038] The electron source 101 may include a cathode (not shown) and an extractor or anode (not shown). In operation, the electron source 101 is configured to emit primary electrons from the cathode, which are extracted or accelerated by the extractor or anode to form a primary electron beam 102 that forms a primary beam crossover (virtual or real) 101s. The primary electron beam 102 can be visualized as being emitted from the primary beam crossover 101s.

[0029]

[0039] The source conversion unit 120 may include an image-forming element array (not shown in FIG. 1B) and a beam-limiting aperture array (not shown in FIG. 1B). The image-forming element array may include a plurality of micro-deflectors or micro-lenses that can affect the plurality of primary beamlets 102_1, 102_2, 102_3 of the primary electron beam 102 and form a plurality of parallel images (virtual or real) of the primary beam crossover 101s, one for each of the primary beamlets 102_1, 102_2, 102_3. The beam-limiting aperture array may be configured to limit the diameter of each of the primary beamlets 102_1, 102_2, and 102_3. Although FIG. 1B shows three primary beamlets 102_1, 102_2, and 102_3 as an example, it will be appreciated that the source conversion unit 120 may be configured to form any number of primary beamlets. For example, the source conversion unit 120 can be configured to form a 3x3 array of primary beamlets. The source conversion unit 120 can further include an aberration compensator array configured to compensate for aberrations of the probe spots 102_1S, 102_2S, and 102_3S. In some embodiments, the aberration compensator array can include a field curvature compensator array having microlenses configured to compensate for field curvature aberrations of the probe spots 102_1S, 102_2S, and 102_3S, respectively. In some embodiments, the aberration compensator array can include an astigmatism compensator array having micro-stigmators configured to compensate for astigmatism of the probe spots 102_1S, 102_2S, and 102_3S, respectively. In some embodiments, the imaging element array, the field curvature compensator array, and the astigmatism compensator array can each include multiple layers of micro-deflectors, micro-lenses, and micro-astigmators. Examples of multi-layer arrays are further described in US Patent Application No. 62 / 567,134, which is incorporated herein in its entirety.

[0030]

[0040] The condenser lens 110 is configured to focus the primary electron beam 102. The condenser lens 110 can be further configured to adjust the current of the primary beamlets 102_1, 102_2, and 102_3 downstream of the source conversion unit 120 by varying the focusing power of the condenser lens 110. This allows the focusing state of the beamlets 102_1, 102_2, and 102_3 to be changed by the condenser lens 110. Alternatively, this current change can be performed by changing the radial size of the beam-limiting aperture in the beam-limiting aperture array corresponding to each primary beamlet. Therefore, the beamlet current can be different at different positions along the beamlet path. The beamlet current can be adjusted so that the beamlet current on the sample surface (e.g., probe spot current) is set to a desired amount.

[0031]

[0041] The condenser lens 110 may be a movable condenser lens, which can be configured so that the position of its first principal surface is movable. The movable condenser lens can be configured to be magnetic, electrostatic, or electromagnetic (e.g., compound). Movable condenser lenses are further described in U.S. Patent No. 9,922,799 and U.S. Patent Application Publication No. 2017 / 0025243, both of which are incorporated herein by reference in their entireties. In some embodiments, the condenser lens may be an anti-rotation lens, which can keep the rotation angle of an off-axis beamlet constant while varying the beamlet current. In some embodiments, the condenser lens 110 may be a movable anti-rotation condenser lens, which includes an anti-rotation lens having a movable first principal surface. Anti-rotation or movable anti-rotation condenser lenses are further described in International Publication WO 2018 / 122176, which is incorporated herein by reference in its entirety.

[0032]

[0042] The objective lens 131, as shown in the illustrated embodiment, can be configured to focus the beamlets 102_1, 102_2, and 102_3 onto the sample 1 for inspection, forming three probe spots 102_1S, 102_2S, and 102_3S on the surface 7. The gun aperture plate 171 is configured to block ambient electrons of the primary electron beam 102 during operation to reduce Coulomb effect, which can increase the size of each of the probe spots 102_1S, 102_2S, and 102_3S of the primary beamlets 102_1, 102_2, and 102_3, thereby degrading inspection resolution.

[0033]

[0043] The beam separator 160 may be, for example, a Wien filter including an electrostatic deflector that generates an electrostatic dipole field E1 and a magnetic dipole field B1. The beam separator 160 may use the Lorentz force to affect electrons passing therethrough. The beam separator 160 may be activated to generate the electrostatic dipole field E1 and the magnetic dipole field B1. During operation, the beam separator 160 may be configured to apply an electrostatic force to individual electrons of the primary beamlets 102_1, 102_2, and 102_3 via the electrostatic dipole field E1. The electrostatic force may be equal in magnitude but opposite in direction to the magnetic force applied to individual electrons by the magnetic dipole field B1 of the beam separator 160. The primary beamlets 102_1, 102_2, and 102_3 may pass substantially straight through the beam separator 160.

[0034]

[0044] The deflection scan unit 132 is configured, during operation, to deflect the primary beamlets 102_1, 102_2, and 102_3 to scan the probe spots 102_1S, 102_2S, and 102_3S over respective scan areas within the section of the surface 7. In response to the sample 1 being illuminated at the probe spots 102_1S, 102_2S, and 102_3S by the primary beamlets 102_1, 102_2, and 102_3, secondary electrons are emitted from the sample 1, forming three secondary electron beams 102_1se, 102_2se, and 102_3se that are emitted from the sample 1 during operation. Each of the secondary electron beams 102_1se, 102_2se, and 102_3se typically contains electrons having various energies, including secondary electrons (e.g., having electron energies ≦50 eV) and backscattered electrons (e.g., having electron energies between 50 eV and the incident energies of the primary beamlets 102_1, 102_2, and 102_3).

[0035]

[0045] The beam separator 160 is configured to deflect the secondary electron beams 102_1se, 102_2se, and 102_3se towards the secondary imaging system 150. The secondary imaging system 150 then focuses the secondary electron beams 102_1se, 102_2se, and 102_3se onto the detection elements 140_1, 140_2, and 140_3 of the electron detection device 140M. The detection elements 140_1, 140_2, and 140_3 are arranged to detect the corresponding secondary electron beams 102_1se, 102_2se, and 102_3se and generate corresponding signals. These signals can be sent to a signal processing unit (not shown), for example, to construct an image of a corresponding scan area of ​​the sample 1.

[0036]

[0046] The beam separator 160 can be configured to deflect the secondary electron beam by an angle α toward the secondary imaging system 150. The angle α can be defined as the angle between the primary optical axis 100_1 and the secondary optical axis 150_1. The angle α can represent the separation angle between the primary electron beamlet and the corresponding secondary electron beamlet on the optical axis. In some embodiments, the angle α can be set in the range of 5 to 25 degrees.

[0037]

[0047] As discussed above, the beam separator 160 may be a deflection device including a magnetic deflector such as a Wien filter. The deflection device may deflect electrons passing through it. The direction and angle of deflection of the electrons may depend on the direction of movement and energy (which may be represented, for example, by velocity) of the electrons. Primary electrons may travel toward the sample 1, while secondary electrons may originate from the surface 7 of the sample 1 and travel away from the sample 1. This allows primary electrons traveling in a different direction from the secondary or backscattered electrons to be distinguished from the secondary or backscattered electrons. Thus, the primary beamlets 102_1, 102_2, and 102_3 may pass substantially straight through the beam separator 160, while the secondary electron beams 102_1se, 102_2se, and 102_3se are deflected, for example, by an angle α, away from the optical axis 100_1.

[0038]

[0048] However, the primary beamlets 102_1, 102_2, and 102_3 themselves may contain electrons of different energy levels. Therefore, dispersion may occur in each of the primary beamlets 102_1, 102_2, and 102_3. The dispersion may affect the primary beamlets 102_1, 102_2, and 102_3 to form a probe spot on the sample 1 that deviates from the desired shape or is enlarged. As a result, the dispersion may cause the probe spot to be, for example, elliptical or enlarged. The dispersion caused by the beam separator 160 may reduce imaging resolution.

[0039]

[0049] Furthermore, dispersion can affect the secondary electron beams 102_1se, 102_2se, and 102_3se to form larger spots on the electron detection device 140M. Dispersion can reduce secondary electron collection efficiency and contribute to crosstalk.

[0040]

[0050] In Figure 1B, the paths of the beamlets within the primary projection system 130 may be merely schematic. For example, the dotted line representation of the beamlets traveling linearly through the beam deflector 160, the deflection scanning unit 132, and the objective lens 131 as shown in Figure 1B may indicate a correspondence between the beamlets entering and exiting an electronic optical element or system such as the primary projection system 130. That is, the trajectories of the beamlets may differ from those shown in the primary projection system 130 of Figure 1B. The relative positions of the beamlets may vary depending on the configuration and mode of operation of the electronic optical elements.

[0041]

[0051] The separation angle α can be set based on various criteria. In some embodiments, the separation angle α can be set to minimize the effects of dispersion. For example, the separation angle α can be selected to be as small as possible. The beam separator 160 can be configured to deflect the secondary beamlets by as little as possible so that the magnitudes of the electrostatic dipole field E1 and the magnetic dipole field B1 generated by the beam separator 160 are minimized. To minimize the effects of dispersion, it can be effective to reduce the magnitudes of E1 and B1.

[0042]

[0052] However, reducing the separation angle α may limit the available space between the primary optical axis 100_1 and the secondary optical axis 150_1. Space limitations impose packaging constraints on the secondary imaging system 150. Such constraints may limit the flexibility in the size and position of elements in the secondary imaging system 150, such as lenses.

[0043]

[0053] 1C shows an exemplary configuration of detection systems 100A-D that may form part of apparatus 100A. Detection systems 100A-D may include a secondary imaging system 150 and an electronic detection device 140M. Secondary imaging system 150 may include a zoom lens 151, a projection lens 152, and an anti-scan deflection unit 157, all of which may be aligned with a secondary optical axis 150_1. Detection elements 140_1, 140_2, and 140_3 of electronic detection device 140 may be positioned on a detection plane SP3. Zoom lens 151, projection lens 152, and objective lens 131 may together project an image of sample surface 7 onto detection plane SP3. These elements can focus the secondary electron beams 102_1se, 102_2se, and 102_3se to form secondary electron spots on the detection elements 140_1, 140_2, and 140_3, respectively, when the deflection scanning unit 132 is off. The anti-scan deflection unit 157 can be configured to keep the secondary electron spots within the corresponding detection elements when the deflection scanning unit 132 scans the beamlets 102_1, 102_2, and 102_3 over each region.

[0044]

[0054] The total imaging magnification from the surface 7 of the sample 1 to the detection plane SP3 can be determined based on the pitch of the probe spots on the detection elements (e.g., the pitch between the secondary electron spots on the detection elements 140_1, 140_2, and 140_3) and the pitch of the probe spots on the sample 1 (e.g., the pitch between the probe spots 102_1S, 102_2S, and 102_3S).

[0045]

[0055] By imaging each probe spot on the sample surface 7 onto one detector element, correspondence between multiple probe spots and multiple detector elements can be ensured. In some embodiments, the probe spot pitch on the sample 1 may vary for different inspection applications, and the magnification may change accordingly.

[0046]

[0056] The zoom lens 151 may include two lenses 151_11 and 151_12. The lenses 151_11 and 151_12 may be electrostatic lenses. The image plane of the zoom lens 151 may be configured to be at a transfer plane SP2. A field lens may be provided at the transfer plane SP2. In some embodiments, the position of the transfer plane SP2 may be different for different modes, such as a low-energy secondary electron detection mode and a backscattered electron detection mode.

[0047]

[0057] The projection lens 152 may include an electrostatic lens 152_11 and a magnetic lens 152_12. The image plane of the projection lens 152 may be configured to be at the detection plane SP3. A first imaging magnification level from the sample surface 7 to the transfer plane SP2 may be realized by the objective lens 131 and the zoom lens 151. A second imaging magnification level from the transfer plane SP2 to the detection plane SP3 may be realized by the projection lens 152. The total imaging magnification from the sample surface 7 to the detection plane SP3 may be equal to the product of the first imaging magnification level and the second imaging magnification level. In some embodiments, the second imaging magnification level may be configured to be greater than the first imaging magnification level. Setting the second level greater than the first level may be advantageous in some imaging modes, such as a slow secondary electron detection mode.

[0048]

[0058] The zoom lens 151 can perform a zoom function. By adjusting the focusing power of the lenses 151_11 and 151_12, the first imaging magnification level can be varied to achieve a desired total imaging magnification. The projection lens 152 can perform an anti-rotation function. By adjusting the magnetic field of the magnetic lens 152_12 and the focusing power of the electrostatic lens 152_11, the total image rotation and the second imaging magnification level at the detection plane SP3 can be set to remain constant. The anti-scan deflection unit 157 can perform an anti-scan function. By synchronously deflecting the secondary electron beam using the deflection scan unit 132, the displacement of the secondary electron spot on the detection plane SP3 can be substantially canceled. As a result, the correspondence between multiple probe spots and multiple detection elements can be maintained.

[0049]

[0059] Exemplary operations of the detection systems 100A-D may include the following: For example, the objective lens 131 may focus the secondary electron beams 102_1se, 102_2se, and 102_3se generated from the probe spots 102_1S, 102_2S, and 102_3S, respectively, to form first secondary electron images of the three probe spots on the image plane SP1_se. The image plane SP1_se is below the zoom lens 151 and may move with changes in the operating conditions of the objective lens 131. The beam separator 160 may deflect the secondary electron beams 102_1se, 102_2se, and 102_3se so that these beams are incident on the secondary imaging system 150 along the secondary optical axis 150_1. The zoom lens 151 can then focus the secondary electron beams 102_1se, 102_2se, and 102_3se to form a second secondary electron image of the three probe spots on the transmission plane SP2, and the projection lens 152 can then focus the secondary electron beams 102_1se, 102_2se, and 102_3se to form a third secondary electron image of the three probe spots on the detection plane SP3.

[0050]

[0060] The zoom lens 151, including the first zoom lens 151_11 and the second zoom lens 151_12, can be adjusted to achieve a desired imaging magnification between the sample 1 and the detection plane SP3 when the imaging conditions of the objective lens 131 and the multiple beamlets of the primary electron beam change. For example, the first zoom lens 151_11 and the second zoom lens 151_12 can be adjusted so that the pitch of the secondary electron beams 102_1se, 102_2se, and 102_3se matches the pitch of the detector elements 140_1, 140_2, and 140_3. The projection lens 152, including the magnetic lens 152_12 and the electrostatic lens 152_11, can be adjusted so that the orientations of the secondary electron beams 102_1se, 102_2se, and 102_3se match the orientations of the detector elements 140_1, 140_2, and 140_3 when the imaging conditions change. The anti-scan deflection unit 157 can be operated to keep the secondary electron beams 102_1se, 102_2se, and 102_3se within the detection elements 140_1, 140_2, and 140_3 while the deflection scan unit 132 scans the beamlets 102_1, 102_2, and 102_3 over each region on the sample 1.

[0051]

[0061] As discussed above, the beam separator 160 can be configured to deflect the secondary beamlets by a small angle α, e.g., to minimize the effects of dispersion. The angle α can be set, for example, between 5 and 25 degrees. A small separation angle α can limit the space available for the secondary imaging system 150 and the primary projection system 130. The elements closest to the beam separator 160, such as the first lens 151_11 of the zoom lens 151, can be most affected by these space constraints. Furthermore, as these two systems become more complex, e.g., by using more beamlets and detection elements, the space constraints can become even more severe. While it is possible to miniaturize the lenses in the two systems, this can result in degraded imaging quality. For example, the larger the inner diameter of a lens, the smaller the aberrations introduced by the lens. At the same time, the closer the lens is located to the beam separator 160, the smaller the aberrations introduced by the lens. It is desirable to minimize aberrations occurring in the secondary imaging system 150 because they can reduce secondary electron collection efficiency and contribute to crosstalk. However, due to packaging constraints, it is difficult to place lenses with large inner diameters close to the beam separator 160. Therefore, from the perspective of minimizing aberrations occurring in the secondary imaging system 150, it is desirable to set the separation angle α as large as possible so that more space is available to accommodate the lenses. Thus, there is a trade-off between minimizing the effects of dispersion from the beam separator 160 and minimizing aberrations from the secondary imaging system 150. As a result, the separation angle α can be selected to balance the requirements of primary electron image resolution, secondary electron detection efficiency, and crosstalk. Electrostatic lenses typically occupy less space than comparable magnetic lenses, but they also generate more aberrations than magnetic lenses. Therefore, in some embodiments, an electromagnetic compound lens is provided as the first lens of a zoom lens in the secondary imaging system, such as lens 151_11 of zoom lens 151 in FIG. 1C .Since the electromagnetic compound lens can be made more compact than a conventional magnetic lens with a coil, it allows for increased flexibility to use a first lens with low aberrations when a small separation angle α is set, thereby achieving an inspection tool with reduced dispersion effects and reduced aberrations.

[0052]

[0062] For example, due to space limitations within the secondary imaging system 150, the lenses of the zoom lens may typically be electrostatic lenses. As an example, the electrostatic lens may include two end electrodes and one or more internal electrodes and function as an Einzel lens. In an Einzel lens, the end electrodes on the beam entrance side and the beam exit side are set to the same potential, and the one or more internal electrodes may be biased positively (i.e., positive mode), negatively (i.e., negative mode), or negatively and positively (i.e., a combination mode in which two or more internal electrodes may be used) relative to the end electrodes. To ensure that the secondary imaging system 150 operates at ground potential, the end electrodes of the Einzel lens may be set to ground potential.

[0053]

[0063] In general, magnetic lenses can produce smaller aberrations than electrostatic lenses. However, conventional magnetic lenses with adjustable focusing power include coil windings and are therefore bulky. Conventional magnetic lenses may not be ideal in situations with packaging constraints. Therefore, the secondary imaging system 150 can use an Einzel lens, for example, in the zoom lens 151.

[0054]

[0064] The Einzel lens can be operated in a positive mode, a negative mode, or a combination mode in the secondary imaging system 150. The absolute voltage in the positive mode is higher than in the other modes. While using a higher voltage can be advantageous to reduce the effects of aberrations, doing so can introduce the risk of arcing. For example, if the conductive electrodes in the secondary imaging system 150 are placed close to each other due to packaging constraints, there may be many arcing paths, and high voltages must be avoided for electrical safety. Therefore, it may be desirable to operate the Einzel lens in a negative mode.

[0055]

[0065] In some embodiments of the present disclosure, one lens in a zoom lens can be an electromagnetic compound lens that includes a magnetic lens and an electrostatic lens. The magnetic lens of the compound lens can include a permanent magnet. The magnetic lens of the compound lens can provide a portion of the total focusing power of the compound lens, and the electrostatic lens constitutes the remaining portion of the total focusing power. The electrostatic lens of the compound lens can be operated in a positive mode that uses a lower voltage than a pure Einzel lens. According to some embodiments, aberrations in a zoom lens using an electromagnetic compound lens can be reduced compared to a typical zoom lens in which all lenses are electrostatic.

[0056]

[0066] Reference is now made to FIG. 2A , which illustrates an exemplary configuration of an electromagnetic compound lens 210A according to an embodiment of the present disclosure. The compound lens of FIG. 2A may form part of the secondary imaging system 150. For example, the compound lens 210A may be provided as the first lens 151_11 of the zoom lens 151 of the secondary imaging system 150 of FIG. 1C . Thus, the compound lens 210A may be disposed between the beam separator 160 and the projection lens 152. The compound lens 210A may be aligned with an axis 210_1. In some embodiments, the axis 210_1 may be the axis 150_1, e.g., when the compound lens 210A is provided as the first lens 151_11. The compound lens 210A may be rotationally symmetric about the axis 210_1.

[0057]

[0067] The compound lens 210A may include a permanent magnet 211, a first pole piece 212, a second pole piece 213, a first electrode 215, and a second electrode 216. The magnet 211 may be provided around an axis 210_1 between the first pole piece 212 and the second pole piece 213 along the axis 210_1. The first and second pole pieces 212, 213 may be provided along the axis 210_1 between the first electrode 215 and the second electrode 216. The components 211, 212, 213, 215, and 216 may have an annular shape. Compared to coils, permanent magnets occupy less space, may generate less heat, and do not require connections to a driver. Therefore, permanent magnets may be suitable for placement in high-voltage environments.

[0058]

[0068] The magnet 211 may have a magnetization direction in a longitudinal direction that may be parallel to the axis 210_1. The first pole piece 212 and the second pole piece 213 may be formed from a conductive magnetic material. In some embodiments, one or both of the first and second pole pieces 212 and 213 may be in direct contact with the magnet 211. A magnetic circuit may be formed by the magnet 211, the first pole piece 212, and the second pole piece 213. The pole pieces 212 and 213 may be provided to shape and direct the magnetic field generated by the magnet 211. The pole pieces 212 and 213 may be provided separately so as not to physically contact each other.

[0059]

[0069] The first and second pole pieces 212, 213 may form a non-magnetic gap G1. The gap G1 may be formed radially inward of the magnet 211 so as to direct the magnetic field generated by the magnet 211 toward the axis 210_1. The gap G1 may extend to an annular region around the axis 210_1. The extended annular region formed by the gap G1 may have an outer diameter that is smaller than the inner diameter of the magnet 211. The gap G1 may be free space, or it may be partially or completely filled with a material that has little or no effect on the magnetic field, i.e., a magnetic permeability close to or equal to 1.

[0060]

[0070] The compound lens 210A includes a magnetic lens that can be formed by a magnet 211, a first magnetic pole piece 212, and a second magnetic pole piece 213. The excitation of the magnetic lens is provided by the magnet 211. A magnetic field 210-mf can appear through the gap G1. FIG. 2A shows the magnetic field lines of the magnetic field 210-mf. The magnetic field can leak through the gap G1 between the first and second magnetic pole pieces 212 and 213 to an area around the axis 210_1. Therefore, electrons traveling within the compound lens 210A can be affected by the magnetic field of the magnetic lens. When one or both of the first and second magnetic pole pieces 212 and 213 are spaced apart from the magnet 211, the first and second magnetic pole pieces 212 and 213 can have a stronger magnetic coupling at the portion spaced apart from the magnet 211 than at the gap G1. Therefore, the magnetic field can preferentially leak through the gap G1. In some embodiments, the first and second pole pieces 212, 213 may have different diameters. For example, the first pole piece 212 may have a different inner diameter than the second pole piece 213.

[0061]

[0071] The compound lens 210A includes an electrostatic lens that can be formed by first and second pole pieces 212, 213, a first electrode 215, and a second electrode 216. The first and second electrodes 215, 216 can form end electrodes. The first and second electrodes 215, 216 can be formed from a conductive material. A voltage can be applied to the components 212, 213, 215, and 216. When two of the components 212, 213, 215, and 216 are set to different potentials, an electrostatic field can be generated. For example, in FIG. 2A , the first electrode 215 can be set to a different potential than the first pole piece 212, thereby forming an electric field between them. Similarly, the second electrode 216 can be set to a different potential than the second pole piece 213. The potentials of the first and second pole pieces 212, 213 can be the same. The potentials of the first and second electrodes 215, 216 can also be the same (as in an Einzel lens). Figure 2A shows the equipotential lines of the electric field 210-ef. The compound lens 210A can be configured to be symmetric about the cross-sectional axis 210_1, for example in the region of the gap G1.

[0062]

[0072] In some embodiments, the first pole piece 212 and the second pole piece 213 may be electrically connected to each other, such that the first pole piece 212 and the second pole piece 213 may form a single electrode, and a single voltage may be applied to the first pole piece 212 and the second pole piece 213.

[0063]

[0073] The focusing power of compound lens 210A can be adjustable. For example, the electric field of the electrostatic lens composed of components 212, 213, 215, and 216 can be adjusted by varying the voltage on the electrodes of the electrostatic lens. Since magnet 211 is a permanent magnet and its magnetization can be fixed, the magnetic field generated by the magnetic lens can remain fixed. The focusing power of the compound lens can depend on both the magnetic and electric fields. Thus, when the magnetic field is fixed, the focusing power adjustment function can be provided by the electrostatic portion of the compound lens.

[0064]

[0074] The compound lens 210A can include an electrostatic lens and a magnetic lens, and can be adjustable by adjusting the voltages applied to the first electrode 215, the second electrode 216, and the central electrode, which can include the first pole piece 212 or the second pole piece 213.

[0065]

[0075] FIG. 2B illustrates another exemplary configuration of a compound lens 210B according to an embodiment of the present disclosure. The compound lens 210B may be similar to the compound lens 210A discussed above with respect to FIG. 2A, with the following exemplary differences: The compound lens 210B may include a gap Ga between the magnet 211 and the first pole piece 212 and a gap Gb between the magnet 211 and the second pole piece 213, each along the axis 210_1. The first and second pole pieces 212, 213 may have stronger magnetic coupling at the gaps Ga and Gb than at the gap G1. The first and second pole pieces 212, 213 may have different shapes. The first pole piece 212 may have a smaller inner diameter than the second pole piece 213. Additionally, the compound lens 210B may also include an electrode 214 disposed within the gap G1.

[0066]

[0076] The first and second pole pieces 212, 213 can be shaped to form a gap G1 at various positions along the axis 210_1. As shown in FIG. 2B, the gap G1 can be formed at one end of the magnet 211 in the axial direction. The gap G1 can be formed near one end of the magnet 211. For example, the gap G1 can be closer to one end of the magnet 211 than the opposite end of the magnet 211 in the direction of the axis 210_1. The gap G1 can be positioned to be on the electron entrance side of the electron beam. For example, the compound lens 210B can be positioned in the secondary imaging system so that secondary electrons of the secondary beam enter from the right end in the view shown in FIG. 2B. The axis 210_1 can be collinear with the secondary optical axis 150_1 (see FIG. 1C). Electrons can enter the compound lens 210B through an opening in the first pole piece 212. Therefore, the electrons can be affected by a magnetic field emerging from the gap G1 immediately after entering the compound lens 210B. Positioning the gap G1 near the end of the compound lens 210B where the electrons enter can ensure that the magnetic field affects the electrons early and reduce aberrations in the compound lens 201B.

[0067]

[0077] The electrode 214 can be provided to partially or completely cover the gap G1. In some embodiments, the electrode 214 is provided completely within the gap G1 and does not extend outside the gap G1. The electrode 214 can be formed of a non-magnetic material. The electrode 214 can be formed of a material that has little or no effect on the magnetic field generated by the magnet 211 so as not to interfere with the magnetic field. To avoid charging the magnet 211, the electrode 214 can completely block the gap G1. This prevents electrons traveling through the compound lens 210B, for example, along the axis 210_1, from colliding with the magnet 211. This prevents charge from accumulating on the magnet 211, thereby preventing charge from changing the electrostatic properties of the electrostatic lens of the compound lens 210B and, as a result, maintaining a stable focusing force of the electrostatic lens. Furthermore, the geometry of the components 211, 212, and 213 can be configured to reduce the likelihood of electrons reaching the magnet 211. For example, the ring-shaped thickness of magnet 211 can be smaller than that of first and second pole pieces 212, 213. In some embodiments, the inner diameter of magnet 211 can be larger than that of first and second pole pieces 212, 213. The inner diameter of magnet 211 may be significantly larger than that of first and second pole pieces 212, 213. Gap G1 can be smaller than the difference in radial size between magnet 211 and first pole piece 212 (the radial direction is perpendicular to axis 210_1), or smaller than the difference in radial size between magnet 211 and second pole piece 213. Such a configuration can reduce the likelihood that electrons traveling within compound lens 210B will reach magnet 211.

[0068]

[0078] The compound lens 210B can include an electrostatic lens and a magnetic lens. The magnetic lens of the compound lens 210B can be formed by components 211, 212, and 213. The magnetic field generated by the components 211, 212, and 213 can leak through the gap G1 and affect electrons traveling along the axis 210_1. The electrostatic lens of the compound lens 210B can be formed by components 212, 213, 214, 215, and 216. A third electrode can be provided for the electrostatic lens of the compound lens 210B, along with the first electrode 215 and the second electrode 216. The third electrode can include the electrode 214. The electrode 214 can be in direct contact with one or both of the first and second pole pieces 212 and 213. In some embodiments, the electrostatic lens and the magnetic lens of the compound lens 210B can be formed using common components. For example, first pole piece 212 and second pole piece 213 may be components of both the electrostatic lens of compound lens 210B and the magnetic lens of compound lens 210B. In other embodiments, the electrostatic lens and magnetic lens components may be mutually exclusive, for example, as discussed below.

[0069]

[0079] In some embodiments, the electrode 214 can have the same or a different inner diameter than the first pole piece 212 or the second pole piece 213. For example, as shown in FIG. 2B , the electrode 214 has an inner diameter D1 that is larger than the inner diameter D2 of the first pole piece 212. Furthermore, the electrode 214 can be positioned such that a gap is formed between the first pole piece 212 and the electrode 214, or between the second pole piece 213 and the electrode 214.

[0070]

[0080] 2C illustrates another exemplary configuration of a compound lens 210C according to an embodiment of the present disclosure. The compound lens 210C may be similar to the compound lens 210A and the compound lens 210B discussed above, with the following exemplary differences: The compound lens 210C may include an electrode 214 disposed inside a gap G1. The compound lens 210C may include a gap Gc between the electrode 214 and the first pole piece 212 and a gap Gd between the electrode 214 and the second pole piece 213, each along the axis 210_1. The electrode 214 may have a larger inner diameter than each of the first and second pole pieces 212 and 213. The compound lens 210C may be configured to reduce the likelihood of electrons colliding with the magnet 211.

[0071]

[0081] Reference is now made to FIG. 3A , which illustrates an exemplary configuration of a compound lens 220A according to an embodiment of the present disclosure. The compound lens 220A may include an electrode 214 covering the first and second pole pieces 212, 213. The electrode 214 may cover the inner surfaces of the first and second pole pieces 212, 213 that face the axis 210_1. The electrode 214 may extend along the axis 210_1 from the end of the first pole piece 212 to the end of the second pole piece 213. The electrode 214 may cover substantially all of the inner surfaces of the first and second pole pieces 212, 213 that face the axis 210_1.

[0072]

[0082] In the compound lens 220A, the first pole piece 212 and the second pole piece 213 can be made of a magnetically conductive and non-conductive material. The material of one or both of the first and second pole pieces 212, 213 can be an electrical insulator. The electrode 214 can be made of a non-magnetic material.

[0073]

[0083] The compound lens 220A can include an electrostatic lens and a magnetic lens. The magnetic lens of the compound lens 220A can be formed by components 211, 212, and 213. The magnetic field generated by the components 211, 212, and 213 can leak through the gap G1 and affect electrons traveling along the axis 210_1. The electrostatic lens of the compound lens 220A can be formed by components 214, 215, and 216. The electrode 214 can be in direct contact with one or both of the first and second pole pieces 212 and 213. In some embodiments, a gap can be provided between the electrode 214 and the first and second pole pieces 212 and 213. For example, the electrode 214 can be radially spaced apart from the first and second pole pieces 212 and 213. An electric field can be generated in the compound lens 220A by setting two of the components 214, 215, and 216 to different potentials.

[0074]

[0084] Compound lens 220A can allow for increased design flexibility. For example, an electric field can be generated by electrically conductive components, such as electrode 214, first electrode 215, and second electrode 216. First and second pole pieces 212, 213 do not need to be made of conductive materials to form an electrostatic lens, allowing for increased flexibility in the selection of materials for constructing compound lens 220A.

[0075]

[0085] FIG. 3B illustrates another exemplary configuration of a compound lens 220B according to an embodiment of the present disclosure. The compound lens 220B may be similar to the compound lens 220A discussed above with respect to FIG. 3A, with the following exemplary differences: The compound lens 220B may include an electrode 214 having a shape that substantially covers the first pole piece 212, the second pole piece 213, and the magnet 211. The electrode 214 may surround the first pole piece 212, the second pole piece 213, and the magnet 211. The electrode 214 may have a shape that substantially includes a U-shaped ring. For example, the electrode 214 may include a U-shaped cross-section that is rotationally symmetric about the axis 210_1. The electrode 214 may include a portion that covers the first and second pole pieces 212, 213 longitudinally, i.e., along the axis 210_1, and a portion that covers the first and second pole pieces 212, 213 radially. The electrode 214 can cover the inner surfaces of the first and second pole pieces 212, 213 facing the axis 210_1. The electrode 214 can extend along the axis 210_1 from the end of the first pole piece 212 to the end of the second pole piece 213. The electrode 214 can also cover the end faces of the first and second pole pieces 212, 213. The electrode 214 can cover three sides of the outer periphery of the first pole piece 212, the second pole piece 213, and the magnet 211. For example, the electrode 214 can cover the axially inner and radial end sides of the group of components 211, 212, and 213. In some embodiments, the electrode 214 can also cover another side of the outer periphery of the first pole piece 212, the second pole piece 213, and the magnet 211, such as the axially outer side. The electrode 214 may completely surround the first pole piece 212 , the second pole piece 213 , and the magnet 211 .

[0076]

[0086] In some embodiments, the electrode 214 can provide a gap between the electrode 214 and the component it covers. The electrode 214 can be in direct contact with one or both of the first and second pole pieces 212, 213. For example, the electrode 214 can be separated from the first pole piece 212 in a direction along the axis 210_1 by a gap Ge and contact the second pole piece 213.

[0077]

[0087] In some embodiments, a compound lens can be used as a lens in a zoom lens. The zoom lens can have an adjustable focusing power to appropriately control the electrons traveling therethrough. For example, a zoom lens can be used to reduce crosstalk between multiple detector elements. In such cases, the zoom lens can be configured to prevent secondary electron beam spots from overlapping or impinging on adjacent detector elements of the detection device. The zoom lens can be configured to make the spot size of each secondary electron beam smaller than the corresponding electron detector element. Furthermore, the zoom lens can be configured to compensate for variations in focusing effects in the objective lens 131. Lenses such as compound lenses 210A, 210B, 210C, 220A, and 220B can be configured to be adjustable by adjustable electrostatic lenses to meet various imaging requirements.

[0078]

[0088] Reference is now made to FIG. 4A , which illustrates an exemplary configuration of a first lens 151-11A in a secondary imaging system of an electron beam tool, according to an embodiment of the present disclosure. The first lens 151-11A may include an electromagnetic compound lens as discussed above with reference to FIGS. 2A-2C and 3A-3B. The first lens 151-11A may be applied as part of the zoom lens 151 of the secondary imaging system 150 discussed above with reference to FIG. 1C. The first lens 151-11A may be configured to focus secondary electron beams 102_1se, 102_2se, and 102_3se that are deflected away from the primary optical axis 100_1 and travel along the secondary optical axis 150_1.

[0079]

[0089] 4A , the first lens 151-11A includes a permanent magnet 211, a first pole piece 212, a second pole piece 213, an electrode 214, a first end shielding electrode 217, and a second end shielding electrode 218. The components 211, 212, 213, 214, 217, and 218 can be aligned with the secondary optical axis 150_1. The first end shielding electrode 217 can include a portion 217a that covers the magnet 211 from the outside and magnetically shields the magnet 211. This prevents the magnetic field generated by the magnet 211 from leaking onto the primary optical axis 100_1.

[0080]

[0090] The first and second pole pieces 212, 213 may be formed from an electrically conductive magnetic material. In some embodiments, the first and second pole pieces 212, 213 may be electrically insulators. The electrode 214 may be formed from an electrically conductive non-magnetic material. The first and second end shield electrodes 217, 218 may be formed from an electrically conductive and magnetically conductive material.

[0081]

[0091] The first lens 151-11A may include a magnetic lens 151-11m that may be formed by a magnet 211, a first pole piece 212, and a second pole piece 213. The excitation of the magnetic lens 151-11m is provided by the magnet 211. A magnetic field may emerge through a gap between the first and second pole pieces 212, 213. An electrode 214 may be provided in this gap to protect the magnet 211 from being charged by an incident secondary electrode.

[0082]

[0092] The first lens 151-11A may include an electrostatic lens 151-11e that may be formed by the first and second pole pieces 212, 213, the electrode 214, the first end shield electrode 217, and the second end shield electrode 218. In some embodiments, the electrostatic lens 151-11e may be formed only by the electrode 214, the first end shield electrode 217, and the second end shield electrode 218. The first and second end shield electrodes 217, 218 may be set to a first potential V1, and the first pole piece 212, the second pole piece 213, and the electrode 214 may be set to a second potential V2 that is different from V1. This may generate an electrostatic field.

[0083]

[0093] The focusing power of the first lens 151-11A may be adjustable. In some embodiments, the focusing power may be configured to be adjusted by varying the second potential V2. The first and second end shielding electrodes 217, 218 may be in direct contact with each other and electrically connected. In some embodiments, the first and second end shielding electrodes 217, 218 may be spaced apart and electrically isolated from each other. The first end shielding electrode 217 may be controlled by a voltage independent of the second end shielding electrode 218.

[0084]

[0094] The first lens 151-11A can be used as the first lens of the zoom lens when counting from the side where the secondary beam enters the zoom lens. The focusing power of the first lens 151-11A can be configured to be adjusted within a range, for example, in response to changes in the imaging conditions of the objective lens 131 and the incident energy of the primary electron beamlets. The first lens 151-11A can include a magnetic lens 151-11m and an electrostatic lens 151-11e that can be configured to satisfy this range. Substantially all or part of a basic portion of this range can be realized by the magnetic lens 151-11m. The remaining portion of this range can be realized by the electrostatic lens 151-11e.

[0085]

[0095] The electrostatic lens 151-11e can be configured to provide a variable focusing force by the electric field generated therein. The electrostatic lens 151-11e functions as an Einzel lens and can be operated in a positive mode, a negative mode, or a combination mode. In the positive mode, the first and second end shielding electrodes 217, 218 can be set to the same potential (e.g., V1), and the inner electrode can be set to a higher potential (e.g., V2, where V2 > V1). The inner electrode of the electrostatic lens 151-11e can include, for example, the first pole piece 212, the second pole piece 213, and the electrode 214, or can include only the electrode 214. In the negative or combination mode, the first and second end shielding electrodes 217, 218 can be set to the same potential (V1) that is higher than the potential of the inner electrode (V2). To achieve equal focusing force on the beam, the absolute value of V2 - V1 in the positive mode is greater than in the negative mode.

[0086]

[0096] As an example, in the positive mode, to achieve the desired focusing power, the inner electrodes 212, 213, and 214 may need to be biased 40 kV relative to the end electrodes 217 and 218, i.e., the absolute value of V2-V1 is 40 kV. In the negative mode, to achieve the desired focusing power, the inner electrodes may need to be biased -20 kV relative to the end electrodes 217 and 218, i.e., the absolute value of V2-V1 is 20 kV.

[0087]

[0097] Operating an electrostatic lens in a positive mode can reduce aberrations. However, positive mode operation requires the application of a relatively high voltage, which can result in an unacceptably high risk of arcing when components are placed in a compact space. An electromagnetic compound lens, in which a fixed portion of the focusing power is provided by a magnetic lens and a variable portion of the focusing power is provided by an electrostatic lens, can enable positive mode operation while reducing the overall applied voltage. For example, with respect to the example described above, a compound lens can be provided that includes a magnetic lens that provides a portion of the focusing power that focuses the beam. This allows for the use of lower voltage values ​​to operate the electrostatic lens portion of the compound lens. Thus, for example, a voltage less than 40 kV can be used.

[0088]

[0098] In some embodiments, the first and second end shielding electrodes 217, 218 may be set to ground potential such that V1 = 0. Setting V1 = 0 may be advantageous for improved electrical safety and reduced complexity of insulation requirements. The electrode 214 may be set to a potential V2 higher than V1 (positive mode). Setting V2 higher than V1 may be advantageous for reducing aberrations.

[0089]

[0099] As discussed above, the first lens 151-11A may be a compound lens including a magnetic lens 151-11m and an electrostatic lens 151-11e. The magnetic field generated by the magnetic lens 151-11m may be represented as B151. The electric field generated by the electrostatic lens 151-11e may be represented as E151. The focusing power of the first lens 151-11A may depend on the electric field strength E151 and the magnetic field B151.

[0090]

[0100] The centers of the electric and magnetic fields may coincide. In some embodiments, the centers of distribution of fields B151 and E151 may be at different locations. For example, the magnetic permeability of the first pole piece 212 and the second pole piece 213 may be different.

[0091]

[0101] In some embodiments, the first and second end shielding electrodes 217, 218 can form a magnetic shield. The first and second end shielding electrodes 217, 218 can be configured to prevent the magnetic field generated by the magnet 211 from leaking into the area around the primary optical axis 100_1. Electromagnetic shielding can be provided around the first lens 151-11A to prevent stray magnetic fields generated from the first lens 151-11A from disrupting the trajectories of the primary beamlets 102_1, 102_2, and 102_3 traveling along the primary optical axis 100_1. In some embodiments, a magnetic shielding tube or a magnetic and electric shielding tube can be provided and centered about the primary optical axis 100_1, similar to the shielding tube 219 in FIGS. 4B and 4C .

[0092]

[0102] FIG. 4B illustrates another exemplary configuration of a first lens 151-11B in a secondary imaging system of an electron beam tool according to an embodiment of the present disclosure. The first lens 151-11B may be similar to the first lens 151-11A discussed above with respect to FIG. 4A, with the following exemplary differences: The first lens 151-11B may include a first electrode 215 and a second electrode 216. The first electrode 215 and the second electrode 216 may be formed in the shape of an annular disk including a central aperture and may be made of a conductive material. The first lens 151-11B includes an electrostatic lens that may be formed by the first electrode 215, the second electrode 216, and the electrode 214. The first and second electrodes 215, 216 may form end electrodes.

[0093]

[0103] A shielding tube 219 may be provided around the primary optical axis 100_1 of the electron beam tool. The shielding tube 219 may prevent stray magnetic fields generated from the first lens 151-11B from disturbing the trajectories of the primary beamlets 102_1, 102_2, and 102_3 traveling along the primary optical axis 100_1. The shielding tube 219 may be a magnetic shielding tube that prevents magnetic fields from penetrating from its exterior to its interior.

[0094]

[0104] 4C illustrates another exemplary configuration of a first lens 151-11C in a secondary imaging system of an electron beam tool according to an embodiment of the present disclosure. The first lens 151-11C may be similar to the first lens 151-11A and the first lens 151-11B discussed above, with the following exemplary differences: The first lens 151-11C may include first and second end shielding electrodes 217, 218 and a shielding tube 219. All of the first and second end shielding electrodes 217, 218 and the shielding tube 219, or only the shielding tube 219, may form a magnetic shield to prevent stray magnetic fields from perturbing the trajectories of the primary beamlets 102_1, 102_2, and 102_3 traveling along the primary optical axis 100_1.

[0095]

[0105] The sizes and shapes of the various components in the apparatus 100A of FIG. 1B can be configured to be implemented within a constrained space. For example, the first end shielding electrode 217 can be formed conically. An electrode with a conical end can be advantageously located in the area between the primary optical axis 100_1 and the secondary optical axis 150_1. In the secondary imaging system 150 of FIG. 1C, the zoom lens 151 can be the first electronic optical element provided after the beam separator 160 along the path toward the electronic detection device 140M. Therefore, the space constraints for the zoom lens 151 can be the most stringent.

[0096]

[0106] The zoom lens 151 may be provided in the space between the beam separator 160 and the electronic detection device 140M. In some embodiments, the zoom lens 151 may be provided immediately downstream of the beam separator 160. The zoom lens 151 may be provided without any intervening elements between the beam separator 160 and the zoom lens 151 in the path from the beam separator 160 to the electronic detection device 140M along the secondary optical axis 150_1.

[0097]

[0107] When the separation angle α is small (see FIG. 1B ), the space between the primary optical axis 100_1 and the secondary optical axis 150_1 is limited. However, it may be desirable to place the lens as close as possible to the beam separator 160. For example, the secondary beams originating from the sample 1 and directed toward the electron detection device 140M may be divergent. Reducing the distance between the beam separator 160 and the zoom lens 151 of the secondary imaging system 150 reduces the size of the secondary beams at the zoom lens 151, thereby reducing aberrations in the zoom lens 151 and preventing the beam spots on the detection elements 140_1, 140_2, and 140_3 from expanding. Furthermore, because aberrations and other effects that have a detrimental effect on imaging quality can propagate and expand through the optical system, it may be desirable to use a lens with low aberrations as the first lens in the secondary imaging system 150.

[0098]

[0108] Permanent magnets, such as magnet 211, avoid the cost and complexity associated with traditional coil windings that require current to be applied. Permanent magnets can save power and avoid heating issues. Permanent magnets can be smaller than equivalent electromagnets that provide the same magnetic field strength. Permanent magnets can have high magnetic field stability and low magnetic field noise. Materials for permanent magnets can include rare earth metals, such as neodymium.

[0099]

[0109] In some embodiments, a method for constructing an electromagnetic compound lens using an optical axis can be provided. FIG. 5 is a flowchart illustrating an exemplary method 500 for constructing an electromagnetic compound lens according to an embodiment of the present disclosure. In step 510, an electromagnetic compound lens can be provided, such as compound lens 210A of FIG. 2A. The compound lens can be provided in an electron beam tool, such as apparatus 100A of FIG. 1B, which can be part of an EBI system, such as 10 of FIG. 1A. In some embodiments, the compound lens can be provided as a lens of a zoom lens in a secondary imaging system of the electron beam tool. For example, the compound lens can be provided as first lens 151_11 of zoom lens 151 in secondary imaging system 150 of FIG. 1C, such as first lens 151-11A of FIG. 4A.

[0100]

[0110] In step 520, a magnetic lens of the compound lens may be formed. For example, step 520 may include forming magnetic lens 151-11m of compound lens 151-11A in FIG. 4A . The magnetic lens may be formed by an annular permanent magnet about the optical axis of the compound lens. In some embodiments, step 520 may further include providing a first magnetic pole piece and a second magnetic pole piece to sandwich the permanent magnet along the optical axis. For example, magnetic lens 151-11m may be formed by first magnetic pole piece 212, second magnetic pole piece 213, and permanent magnet 211.

[0101]

[0111] In step 530, the magnetic field created by the magnetic lens can be directed toward the optical axis. For example, as in Figure 4A, a gap can be provided between the first pole piece 212 and the second pole piece 213 (which can shape and direct the magnetic field initially generated by the magnet 211), and the magnetic field generated by the magnet 211 can be directed through this gap toward the secondary optical axis 150_1.

[0102]

[0112] In step 540, an electrostatic lens of the compound lens can be formed. For example, step 540 can include forming electrostatic lens 151-11e of compound lens 151-11A in FIG. 4A . The electrostatic lens can be formed by two end electrodes and one internal electrode. The two end electrodes can sandwich the internal electrode in the direction of the optical axis of the compound lens. The internal electrode can be formed by a pole piece or a separate electrode. As an example, electrostatic lens 151-11e of compound lens 151-11A can be formed by first end shielding electrode 217, second end shielding electrode 218, and an internal electrode formed by first and second pole pieces 212, 213, and electrode 214.

[0103]

[0113] In step 550, the electrostatic field created by the electrostatic lens can be directed toward the optical axis of the compound lens. For example, by setting the first and second end shielding electrodes 217, 218 to one potential and the inner electrode to another, different potential, the electrostatic field of the electrostatic lens 151-11e can be generated along the optical axis of the compound lens 151-11A between the first and second end shielding electrodes 217, 218.

[0104]

[0114] In step 560, the electron beam traveling through the compound lens can be focused. Focusing the beam can include adjusting the focusing power of the compound lens to focus the beam on a surface. For example, as in FIG. 1C , the zoom lens 151 of the secondary imaging system 150, which can include a compound lens, can be adjusted according to the imaging conditions of the objective lens 131 and the incident energies of the primary electron beamlets 102_1, 102_2, and 102_3 to focus the secondary electron beams 102_1se, 102_2se, and 102_3se on the image plane SP2.

[0105]

[0115] In step 570, the focusing power of the compound lens can be changed. Step 570 can include adjusting the focusing power of the compound lens based on changes in imaging conditions. For example, the compound lens 151-11A of the secondary imaging system 150 of FIG. 4A can be adjusted depending on the imaging conditions of the objective lens 131 and the incident energies of the primary electron beamlets 102_1, 102_2, and 102_3.

[0106]

[0116] 6 is a flowchart illustrating an exemplary method 600 for configuring a charged particle beam device, according to an embodiment of the present disclosure. Method 600 can be performed, for example, by the controller 19 of the EBI system 10, such as that shown in FIG. 1A. The controller 19 can be programmed to implement one or more blocks of method 600. For example, the controller 19 can instruct modules of the charged particle beam device to generate a charged particle beam and perform other functions.

[0107]

[0117] In step 610, a charged particle beam may be generated by a charged particle source. For example, as in FIG. 1B , the electron source 101 may be controlled to emit a primary electron beam 102 formed along a primary optical axis 100_1. Step 610 may include generating a plurality of beamlets from the charged particle beam. For example, the source conversion unit 120 may form a 3×3 array of primary beamlets including primary beamlets 102_1, 102_2, and 102_3 from the primary electron beam 102.

[0108]

[0118] In step 620, the primary beamlets can be directed toward the sample to generate secondary electrons. For example, in FIG. 1B, primary beamlets 102_1, 102_2, and 102_3 can travel along primary optical axis 100_1 and be focused to form probe spots 102_1S, 102_2S, and 102_3S at surface 7 of sample 1.

[0109]

[0119] In step 630, secondary charged particles may be generated from the sample by the primary beamlets to form secondary charged particle beams. For example, in FIG. 1B , secondary electron beams 102_1se, 102_2se, and 102_3se may be generated and emitted from the sample 1 in response to illumination by primary beamlets 102_1, 102_2, and 102_3, traveling in opposite directions along the primary optical axis 100_1.

[0110]

[0120] In step 640, the secondary charged particle beam can be separated from the primary beamlets. For example, in FIG. 1B, the secondary electron beams 102_1se, 102_2se, and 102_3se can be separated from the primary beamlets 102_1, 102_2, and 102_3 by the beam separator 160. As discussed above, the beam separator 160 can be a deflection device including a magnetic deflector such as a Wien filter. The deflection device can deflect the charged particles passing through it. The deflection direction and deflection angle of the electrons can depend on the direction of movement and energy (which can be represented by, for example, velocity) of the charged particles. Therefore, primary charged particles moving in a different direction from the secondary charged particles can be distinguished from the secondary charged particles. 1B, the primary beamlets 102_1, 102_2, and 102_3 may pass substantially straight through the beam separator 160, while the secondary electron beams 102_1se, 102_2se, and 102_3se are deflected away from the optical axis 100_1. The secondary electron beams 102_1se, 102_2se, and 102_3se may be directed to travel along the secondary optical axis 150_1.

[0111]

[0121] In step 650, the secondary charged particle beam can be focused and detected. For example, in FIG. 1B , the secondary electron beam can be focused by a secondary imaging system 150 and detected by an electron detection device 140M. Depending on the imaging conditions of the objective lens 131 and the incident energies of the primary electron beamlets 102_1, 102_2, and 102_3, a zoom lens 151 of the secondary imaging system 150, which can include a compound lens, can be adjusted to focus the secondary electron beams 102_1se, 102_2se, and 102_3se onto the electron detection device 140M.

[0112]

[0122] In step 660, an image of the sample can be constructed. For example, the detection elements 140_1, 140_2, and 140_3 can detect the corresponding secondary electron beams 102_1se, 102_2se, and 102_3se and generate corresponding signals. These signals can be sent to a signal processing unit to construct an image of the corresponding scan area of ​​the sample 1.

[0113]

[0123] The embodiments can be further described using the following clauses. 1. An electromagnetic compound lens, an electrostatic lens provided on the optical axis of the compound lens; a magnetic lens provided on the axis, the magnetic lens including an annular permanent magnet about the optical axis; An electromagnetic compound lens comprising: 2. The compound lens of clause 1, further comprising a first magnetic pole piece and a second magnetic pole piece, the permanent magnet being located between the first magnetic pole piece and the second magnetic pole piece along the optical axis, and an annular gap being formed between the first magnetic pole piece and the second magnetic pole piece such that the magnetic field initially generated by the permanent magnet is directed to leak through the gap toward the optical axis. 3. The compound lens of claim 2, wherein the gap is formed radially inward of the permanent magnet. 3. A compound lens according to clause 2 or clause 3, wherein the gap is formed near one end of the permanent magnet along the optical axis. 4. A compound lens according to any one of clauses 2 to 4, wherein the first pole piece and the second pole piece are in direct contact with the permanent magnet. 5. The compound lens of any one of clauses 2 to 5, wherein the inner diameter of the first pole piece is different from the inner diameter of the second pole piece. 6. A compound lens according to any one of clauses 2 to 6, wherein the electrostatic lens comprises a first electrode and a second electrode, and the first pole piece and the second pole piece are located between the first electrode and the second electrode along the optical axis. 7. A compound lens according to any one of clauses 2 to 6, wherein the first pole piece is a first electrode of an electrostatic lens and the second pole piece is a second electrode of an electrostatic lens. 7. The compound lens of clause 7 or clause 8, wherein the electrostatic lens further comprises a third electrode located between the first and second electrodes along the optical axis. 8. A compound lens according to clause 9, wherein a third electrode is provided within the gap. 9. A compound lens according to clause 10, wherein the third electrode is provided entirely within the gap. 10. A compound lens according to clause 9 or clause 10, wherein the third pole has an inner diameter that is smaller than the inner diameter of the first pole piece and the inner diameter of the second pole piece. 11. A compound lens according to any one of clauses 9, 10 and 12, wherein the third electrode covers the inner surfaces of the first pole piece and the second pole piece facing the optical axis. 12. A compound lens according to any one of clauses 9, 10, 12 and 13, wherein the third electrode extends along the optical axis from the end of the first pole piece to the end of the second pole piece. 13. A compound lens according to any one of clauses 9, 10 and 12-14, wherein a third electrode surrounds the first pole piece, the second pole piece and the magnet. 14. A beam separator provided on the first optical axis, configured to separate a plurality of beamlets of a primary charged particle beam generated by the source from a plurality of secondary charged particle beams emitted from the sample in response to illumination by the beamlets, the secondary charged particle beams traveling along a second optical axis after passing through the beam separator; a secondary imaging system configured to focus the secondary charged particle beam along a second optical axis onto a detector; the secondary imaging system includes an electromagnetic compound lens including an electrostatic lens provided on a second optical axis and a magnetic lens provided on the second optical axis and including an annular permanent magnet; Charged particle optical system. 15. A compound lens according to clause 16, wherein the compound lens is part of a zoom lens in a secondary imaging system. 16. The system of clause 16 or clause 17, wherein the compound lens further includes a first magnetic pole piece and a second magnetic pole piece sandwiching a permanent magnet along the second optical axis, wherein a gap is formed between the first magnetic pole piece and the second magnetic pole piece such that the magnetic field initially generated by the permanent magnet leaks through the gap toward the second optical axis. 17. The system of clause 18, wherein the gap is formed near one end of the permanent magnet along the second optical axis. 18. The system of clause 18 or 19, wherein the first pole piece and the second pole piece are in direct contact with the permanent magnet. 19. The system of any one of clauses 18 to 20, wherein the inner diameter of the first pole piece is different from the inner diameter of the second pole piece. 20. A system described in any one of clauses 18 to 21, wherein the electrostatic lens includes a first electrode, a second electrode, and a third electrode, the third electrode being between the first electrode and the second electrode along the second optical axis. 21. The system of clause 22, wherein the third electrode includes a first pole piece and a second pole piece. 22. The system of clause 22 or clause 23, wherein the first electrode and the second electrode form a magnetic shield around the magnetic lens. 23. A system described in any one of clauses 22 to 24, wherein a first voltage is applied to the first electrode and the second electrode, and a second voltage is applied to the third electrode, the second voltage being higher than the first voltage. 24. A system according to any one of clauses 16 to 25, further comprising a magnetic shielding tube surrounding the first optical axis to prevent the magnetic field of the magnetic lens from leaking towards the first optical axis. 25. A system according to any one of clauses 16 to 26, wherein the compound lens is provided immediately downstream of the beam separator. 26. A method for constructing an electromagnetic compound lens using an optical axis, comprising: forming a magnetic lens with a permanent magnet; directing the magnetic field of the magnetic lens toward the optical axis using two magnetic pole pieces; forming an electrostatic lens by two end electrodes surrounding two magnetic pole pieces along the optical axis; A method comprising: 27. The method according to clause 28, wherein the two pole pieces are electrodes of an electrostatic lens. 28. The method of clause 29, further comprising providing an inner electrode between the two end electrodes. 29. The method of clause 30, wherein the inner electrode covers the inner surfaces of the two pole pieces. 30. The method of any one of clauses 28 to 31, further comprising varying the focusing power of the compound lens by varying the electrostatic field of the electrostatic lens. 31. A method for configuring a charged particle beam device, comprising: Separating the primary charged particle beam and the secondary charged particle beam; focusing the secondary charged particle beam with an electromagnetic compound lens including a permanent magnet; magnetically shielding the magnetic field of the permanent magnet from affecting the primary charged particle beam; A method comprising: 34. The method of clause 33, further comprising varying the focusing power of the electromagnetic compound lens by varying the electrostatic field of the electromagnetic compound lens.

[0114]

[0124] In some embodiments, a controller can be provided to control the charged particle beam system. For example, FIG. 1A shows a controller 19 connected to the EBI system 10. The controller can instruct components of the charged particle beam system to perform various functions, such as controlling the charged particle source to generate the charged particle beam, controlling deflectors to scan the charged particle beam over a sample, and controlling drivers to apply voltages to lenses. The controller can also perform various post-processing functions, such as image acquisition, image segmentation, image processing, contour generation, and overlaying indicators on acquired images. The controller can include storage, which can be a storage medium such as a hard disk, cloud storage, random access memory (RAM), or other type of computer-readable memory. The storage can be used to save raw scanned image data as original images or to save post-processed images. The controller can communicate with cloud storage. A non-transitory computer-readable medium can be provided that stores instructions for a processor of the controller 19 to perform beam forming, lens control, or other functions and methods according to the present disclosure. Common forms of non-transitory media include, for example, floppy disks, flexible disks, hard disks, solid state drives, magnetic tape or any other magnetic data storage medium, CD-ROMs, any other optical data storage medium, any physical medium with a pattern of holes, RAM, PROMs, and EPROMs, FLASH-EPROMs or any other flash memory, NVRAM, cache, registers, any other memory chip or cartridge, and any network of these.

[0115]

[0125] The block diagrams in the figures illustrate the architecture, functionality, and operation of possible implementations of systems, methods, and computer hardware or software products according to various exemplary embodiments of the present disclosure. In this regard, each block in the schematic diagrams may represent a specific mathematical or logical operation that can be implemented using hardware, such as electronic circuits. The blocks may also represent modules, segments, or portions of code, including one or more executable instructions for implementing the specified logical function(s). It will be understood that in some alternative embodiments, the functions depicted in the blocks may occur in a different order than depicted in the figures. For example, two blocks shown in succession may be executed or performed substantially simultaneously, or the two blocks may be executed in the reverse order, depending on the functionality involved. Also, some blocks may be omitted. For example, if the apparatus 100 is a single-beam apparatus, in some embodiments, it may not be necessary to generate multiple beamlets, as in step 610. Furthermore, if only one imaging condition is used, it may not be necessary to change the focusing power of the compound lens, and therefore step 570 may be omitted. Furthermore, steps such as compensating for astigmatism or otherwise may be added to various portions. It will also be understood that each block of the block diagram, and combinations of blocks, can be implemented by special purpose hardware-based systems that perform the specified functions or operations, or by combinations of special purpose hardware and computer instructions.

[0116]

[0126] While the present invention has been described in connection with several exemplary embodiments, it will be understood that other variations and modifications are possible without departing from the spirit and scope of the present invention as hereinafter claimed. For example, while an electromagnetic compound lens has been discussed with respect to its application as a first lens in a secondary imaging system, the electromagnetic compound lens may also be applied as other lenses in a charged particle optical system. A compound lens may be used to focus a primary electron beam, a secondary beam, or other beams. Furthermore, one or more lenses or other electronic optical elements may be added at various locations to the particular configurations of the exemplary charged particle optical systems discussed herein. Electronic optical elements may be provided, for example, for magnification, zooming, and image rotation prevention.

Claims

1. 1. An electromagnetic compound lens, comprising: an electrostatic lens provided on the optical axis of the compound lens; a magnetic lens provided on the axis and including an annular permanent magnet about the optical axis; An electromagnetic compound lens comprising:

2. further comprising a first pole piece and a second pole piece; 2. The compound lens of claim 1, wherein the permanent magnet is located between the first pole piece and the second pole piece along the optical axis, and an annular gap is formed between the first pole piece and the second pole piece such that a magnetic field initially generated by the permanent magnet is directed to leak through the gap toward the optical axis.

3. The compound lens of claim 2 , wherein the gap is formed radially inward of the permanent magnet.

4. The compound lens of claim 2 , wherein the gap is formed near one end of the permanent magnet along the optical axis.

5. The compound lens of claim 2 , wherein the first pole piece and the second pole piece are in direct contact with the permanent magnet.

6. The compound lens of claim 2 wherein the inner diameter of the first pole piece is different from the inner diameter of the second pole piece.

7. the electrostatic lens includes a first electrode and a second electrode; The compound lens of claim 2 , wherein the first pole piece and the second pole piece are located along the optical axis between the first electrode and the second electrode.

8. the first pole piece is a first electrode of the electrostatic lens; The compound lens of claim 2 wherein the second pole piece is a second electrode of the electrostatic lens.

9. The compound lens of claim 7 , wherein the electrostatic lens further comprises a third electrode located between the first and second electrodes along the optical axis.

10. The compound lens of claim 9 , wherein the third electrode is provided in the gap.

11. The compound lens of claim 10 , wherein the third electrode is provided entirely within the gap.

12. 10. The compound lens of claim 9, wherein the third electrode has an inner diameter that is smaller than the inner diameters of the first pole piece and the second pole piece.

13. 10. The compound lens of claim 9, wherein the third electrode covers the inner surfaces of the first pole piece and the second pole piece facing the optical axis.

14. a beam separator provided on a first optical axis, the beam separator configured to separate a plurality of beamlets of a primary charged particle beam generated by a source from a plurality of secondary charged particle beams emitted from a sample in response to illumination by said beamlets, the secondary charged particle beams traveling along a second optical axis after passing through said beam separator; a secondary imaging system configured to focus the secondary charged particle beam along the second optical axis onto a detector; the secondary imaging system includes an electromagnetic compound lens having an electrostatic lens provided on the second optical axis and a magnetic lens provided on the second optical axis and including an annular permanent magnet; Charged particle optical system.

15. 1. A method for constructing an electromagnetic compound lens using an optical axis, comprising: forming a magnetic lens with a permanent magnet; directing the magnetic field of the magnetic lens toward the optical axis using two magnetic pole pieces; forming an electrostatic lens with two end electrodes surrounding the two pole pieces along the optical axis; A method comprising:

Images