Plasma processing system and plasma processing apparatus

Abstract

To suppress variation in a processing characteristic of plasma processing.SOLUTION: A plasma processing system includes a chamber, a substrate support part, an upper member, a support member, a temperature adjustment part, a temperature control part, and a correction part. Inside the chamber, plasma is generated. The substrate support part is provided in the chamber to support a substrate. The upper member is provided at the upper part in the chamber so as to face the substrate support part and has a plurality of gas holes formed for discharging gas. The support member supports the upper member. The temperature adjustment part adjusts a temperature of the support member. The temperature control part controls the temperature adjustment part so that the temperature of the support member becomes a set temperature. The correction part corrects the set temperature so that a temperature rise of the upper member caused by consumption of the upper member becomes smaller.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present disclosure relates to a plasma processing system and a plasma processing apparatus. [Background technology]

[0002] Patent Document 1 listed below discloses a plasma processing apparatus for performing plasma processing on a substrate to be processed using plasma of a processing gas, the plasma processing apparatus comprising: a processing vessel for accommodating the substrate to be processed and capable of evacuating the interior; a lower electrode disposed within the processing vessel and functioning as a mounting table for the substrate to be processed; an upper electrode disposed within the processing vessel opposite the lower electrode and having a removable electrode plate for discharging a shower of processing gas into the processing vessel; a gas supply unit including a gas pipe for supplying the processing gas to the upper electrode; a plasma generating high frequency power application unit for applying high frequency power for plasma generation to at least one of the upper electrode or the lower electrode; a pressure gauge for detecting pressure within the gas pipe; and a control unit for determining a degree of wear of the electrode plate based on the pressure value detected by the pressure gauge, calculating a fluctuation in processing rate due to wear of the electrode plate, and adjusting processing conditions to eliminate this fluctuation in processing rate. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2012-129356 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a technique for suppressing fluctuations in processing characteristics of plasma processing. [Means for solving the problem]

[0005] A plasma processing system according to one aspect of the present disclosure includes a chamber, a substrate support, an upper member, the support member, a temperature adjustment unit, a temperature control unit, and a correction unit. The chamber generates plasma inside. The substrate support is provided within the chamber and supports a substrate. The upper member is provided at an upper portion of the chamber opposite the substrate support and has a plurality of gas holes formed therein for discharging gas. The support member supports the upper member. The temperature adjustment unit adjusts the temperature of the support member. The temperature control unit controls the temperature adjustment unit so that the support member reaches a set temperature. The correction unit corrects the set temperature so that a temperature rise in the upper member due to wear of the upper member is reduced. [Effects of the Invention]

[0006] According to the present disclosure, fluctuations in processing characteristics of plasma processing can be suppressed. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a diagram illustrating an example of the configuration of a capacitively coupled plasma processing apparatus. [Figure 2] FIG. 2 is a diagram illustrating a flow of controlling the temperature of the main body according to the embodiment. [Figure 3A] FIG. 3A is a diagram showing an example of a set temperature according to a comparative example. [Figure 3B] FIG. 3B is a diagram showing an example of a temperature change of the upper top plate according to the comparative example. [Figure 4] FIG. 4 is a diagram showing an example of temperature change of the upper top plate according to the comparative example. [Figure 5A] FIG. 5A is a diagram illustrating an example of the behavior of radicals in plasma due to differences in the temperature of the upper top plate. [Figure 5B] FIG. 5B is a diagram illustrating an example of the behavior of radicals in plasma due to differences in the temperature of the upper top plate. [Figure 6A] FIG. 6A is a diagram illustrating an example of the processing result of the plasma processing depending on the temperature of the upper top plate. [Figure 6B]FIG. 6B is a diagram illustrating an example of the processing result of the plasma processing depending on the temperature of the upper top plate. [Figure 7] FIG. 7 is a diagram illustrating an example of the composition ratio of the components of the film to be formed. [Figure 8] FIG. 8 is a flowchart showing an example of the flow of the temperature control process according to the embodiment. [Figure 9A] FIG. 9A is a diagram showing an example of a set temperature according to the embodiment. [Figure 9B] FIG. 9B is a diagram showing an example of a change in temperature of the upper tabletop according to the embodiment. [Figure 10A] FIG. 10A is a diagram showing another example of the set temperature according to the embodiment. [Figure 10B] FIG. 10B is a diagram showing another example of a temperature change of the upper tabletop according to the embodiment. [Figure 11] FIG. 11 is a diagram showing an example of a temperature change of the upper table according to the embodiment. [Figure 12] FIG. 12 is a diagram illustrating another example of the configuration of the plasma processing system according to the embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, embodiments of a plasma processing system and a plasma processing apparatus will be described in detail with reference to the accompanying drawings. However, the disclosed plasma processing system and plasma processing apparatus are not limited to the following embodiments.

[0009] Conventionally, plasma processing apparatuses have been known that perform plasma processing such as plasma etching on substrates such as semiconductor wafers (hereinafter also referred to as "wafers"). The plasma processing apparatus has a chamber, a substrate support, and an upper electrode. The substrate support is provided within the chamber and supports the substrate. The substrate support includes a lower electrode. The upper electrode is provided above the substrate support. The upper electrode is configured to be able to introduce processing gas into the chamber. For example, the upper electrode is configured to include an electrode plate having a plurality of gas holes and a support that supports the electrode plate. The support is capable of adjusting the temperature.

[0010] During plasma processing, the plasma processing apparatus discharges processing gas from each gas hole in the electrode plate while adjusting the temperature of the support of the upper electrode to a predetermined temperature, generates plasma in the chamber, and performs plasma processing on the substrate.

[0011] In a plasma processing apparatus, the electrode plate of the upper electrode wears out as plasma processing is repeated, and the temperature of the electrode plate rises accordingly. When the temperature of the electrode plate rises, the processing characteristics of the plasma processing apparatus fluctuate.

[0012] Therefore, a technology for suppressing fluctuations in processing characteristics of plasma processing is desired.

[0013] (Embodiment) [Device configuration] An example of a plasma processing system and a plasma processing apparatus according to the present disclosure will be described.

[0014] An example of the configuration of a plasma processing system will be described below: Fig. 1 is a diagram illustrating an example of the configuration of a capacitively coupled plasma processing apparatus.

[0015] The plasma processing system includes a capacitively coupled plasma processing device 1 and a controller 2. The capacitively coupled plasma processing device 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. The plasma processing device 1 also includes a substrate support 11 and a gas inlet. The gas inlet is configured to introduce at least one process gas into the plasma processing chamber 10. The gas inlet includes a showerhead 13. The substrate support 11 is disposed within the plasma processing chamber 10. The showerhead 13 is disposed above the substrate support 11. In one embodiment, the showerhead 13 forms at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the showerhead 13, a sidewall 10a of the plasma processing chamber 10, and the substrate support 11. The plasma processing chamber 10 has at least one gas inlet for supplying at least one process gas to the plasma processing space 10s and at least one gas outlet for exhausting gas from the plasma processing space 10s. The plasma processing chamber 10 is grounded. The showerhead 13 and the substrate support 11 are electrically isolated from the plasma processing chamber 10 enclosure.

[0016] The substrate support 11 includes a main body 111 and a ring assembly 112. The main body 111 has a central region 111a for supporting a substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in a plan view. The substrate W is disposed on the central region 111a of the main body 111, and the ring assembly 112 is disposed on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111. Therefore, the central region 111a is also called a substrate support surface for supporting the substrate W, and the annular region 111b is also called a ring support surface for supporting the ring assembly 112.

[0017] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive member. The conductive member of the base 1110 can function as a lower electrode. The electrostatic chuck 1111 is disposed on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic electrode 1111b disposed within the ceramic member 1111a. The ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has an annular region 111b. Note that the annular region 111b may also be provided by another member surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member. In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the electrostatic chuck 1111 and the annular insulating member. Furthermore, at least one RF / DC electrode coupled to an RF (Radio Frequency) power supply 31 and / or a DC (Direct Current) power supply 32 (described later) may be disposed within the ceramic member 1111a. In this case, the at least one RF / DC electrode functions as a lower electrode. When a bias RF signal and / or a DC signal (described later) is supplied to the at least one RF / DC electrode, the RF / DC electrode is also called a bias electrode. Note that the conductive member of the base 1110 and the at least one RF / DC electrode may function as multiple lower electrodes. Alternatively, the electrostatic electrode 1111b may function as the lower electrode. Therefore, the substrate support 11 includes at least one lower electrode.

[0018] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one cover ring. The edge rings are formed of a conductive or insulating material, and the cover rings are formed of an insulating material.

[0019] The substrate support 11 may also include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow passage 1110a, or a combination thereof. A heat transfer fluid such as brine or a gas flows through the flow passage 1110a. In one embodiment, the flow passage 1110a is formed in the base 1110, and one or more heaters are disposed in the ceramic member 1111a of the electrostatic chuck 1111. The substrate support 11 may also include a heat transfer gas supply configured to supply a heat transfer gas to a gap between the backside of the substrate W and the central region 111a.

[0020] The showerhead 13 is provided on the ceiling wall of the plasma processing chamber 10. The showerhead 13 is supported on the upper part of the plasma processing chamber 10 via an insulating member 19. The showerhead 13 is configured to introduce at least one processing gas from a gas supply unit 20 into the plasma processing space 10s. The showerhead 13 has an upper ceiling plate 14 that serves as an electrode plate, and a main body 15.

[0021] The upper top plate 14 is disposed on the plasma processing space 10s side and forms a surface facing the substrate support part 11. The upper top plate 14 is preferably made of a low-resistance conductor or semiconductor that generates little Joule heat. Examples of suitable materials for the upper top plate 14 include silicon and SiC. In this embodiment, the upper top plate 14 corresponds to the upper member of the present disclosure.

[0022] The main body 15 is disposed on the rear side of the upper top plate 14, opposite the surface facing the upper top plate 14, and supports the upper top plate 14. The main body 15 is made of a conductive material, for example, aluminum whose surface is anodized. In this embodiment, the main body 15 corresponds to the support member of the present disclosure.

[0023] A gas diffusion chamber 15b is formed inside the main body 15. A plurality of gas holes 15a are formed in the bottom of the main body 15 so as to be located below the gas diffusion chamber 15b. The upper top plate 14 is provided with a plurality of gas holes 14a that penetrate the upper top plate 14 in the thickness direction so as to overlap with the gas holes 15a. With this configuration, the process gas supplied to the gas diffusion chamber 15b is dispersed in a shower-like manner and supplied into the plasma processing chamber 10 through the gas holes 15a and 14a.

[0024] The main body 15 is formed with a gas supply port 15c for introducing a processing gas into the gas diffusion chamber 15b. One end of a gas pipe 16 is connected to the gas supply port 15c. The other end of the gas pipe 16 is connected to a gas supply unit 20. The gas supply unit 20 supplies various processing gases used in plasma processing to the gas supply port 13a via the gas pipe 16. A pressure gauge 17 is provided on the gas pipe 16. The pressure gauge 17 detects the gas pressure in the gas pipe 16. The processing gas supplied to the gas supply port 13a is introduced into the plasma processing space 10s via the gas diffusion chamber 13b, the gas holes 15a, and the gas holes 14a. In addition to the showerhead 13, the gas introduction unit may include one or more side gas injectors (SGIs) attached to one or more openings formed in the sidewall 10a.

[0025] The main body 15 is configured so that its temperature can be changed. For example, a flow path 15d is formed inside the main body 15. A heater 15e is provided on the upper surface of the main body 15. A heat transfer fluid such as brine or gas flows through the flow path 1110a. The temperature of the main body 15 can be controlled by controlling the temperature of the heat transfer fluid flowing through the flow path 15d and the temperature of the heater 15e.

[0026] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from a corresponding gas source 21 to the gas line 16 via a corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply unit 20 may include one or more flow modulation devices to modulate or pulse the flow rate of the at least one process gas.

[0027] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This generates a plasma from at least one process gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of a plasma generating unit configured to generate a plasma from one or more process gases in the plasma processing chamber 10. In addition, by supplying a bias RF signal to the at least one lower electrode, a bias potential is generated on the substrate W, thereby attracting ion components in the formed plasma to the substrate W.

[0028] In one embodiment, the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0029] The second RF generating unit 31b is coupled to at least one lower electrode via at least one impedance matching circuit and configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generating unit 31b may be configured to generate multiple bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0030] The power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generator 32a and a second DC generator 32b. In one embodiment, the first DC generator 32a is connected to at least one lower electrode and configured to generate a first DC signal. The generated first bias DC signal is applied to the at least one lower electrode. In one embodiment, the second DC generator 32b is connected to at least one upper electrode and configured to generate a second DC signal. The generated second DC signal is applied to the at least one upper electrode.

[0031] In various embodiments, at least one of the first and second DC signals may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses may have a rectangular, trapezoidal, triangular, or combination thereof pulse waveform. In one embodiment, a waveform generator for generating a sequence of voltage pulses from the DC signal is connected between the first DC generator 32a and at least one lower electrode. Thus, the first DC generator 32a and the waveform generator constitute a voltage pulse generator. When the second DC generator 32b and the waveform generator constitute a voltage pulse generator, the voltage pulse generator is connected to at least one upper electrode. The voltage pulses may have either positive or negative polarity. Furthermore, the sequence of voltage pulses may include one or more positive voltage pulses and one or more negative voltage pulses within one period. The first and second DC generating units 32a and 32b may be provided in addition to the RF power supply 31, or the first DC generating unit 32a may be provided instead of the second RF generating unit 31b.

[0032] The exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure regulating valve regulates the pressure in the plasma processing space 10s. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0033] The controller 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform the various processes described herein. The controller 2 may be configured to control each element of the plasma processing apparatus 1 to perform the various processes described herein. In one embodiment, part or all of the controller 2 may be included in the plasma processing apparatus 1. The controller 2 may include a processor 2a1, a memory 2a2, and a communication interface 2a3. The controller 2 is implemented, for example, by a computer 2a. The memory 2a2 stores programs and various data. For example, the memory 2a2 stores a control program for controlling the plasma processing. The memory 2a2 also stores a recipe that stores processing condition data for the plasma processing. The recipe includes the set temperature of the main body 15 as a processing condition for the plasma processing. The processor 2a1 reads and executes the control program from the memory 2a2 and controls each element of the plasma processing apparatus 1 based on the recipe stored in the memory 2a2. The program and various data may be stored in the memory 2a2 in advance or may be obtained via a medium when needed. The acquired programs and various data are stored in the memory unit 2a2 and are read from the memory unit 2a2 and executed by the processing unit 2a1. The medium may be various storage media readable by the computer 2a, or a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The memory unit 2a2 may include a RAM (Random Access Memory), a ROM (Read Only Memory), an HDD (Hard Disk Drive), an SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a LAN (Local Area Network).

[0034] The plasma processing apparatus 1 performs plasma processing on the substrate W under the control of the control unit 2. The control unit 2 controls the temperature of the main body unit 15 during the plasma processing.

[0035] Next, a flow of controlling the temperature of the main body 15 according to the embodiment will be described. Fig. 2 is a diagram illustrating a flow of controlling the temperature of the main body 15 according to the embodiment. Fig. 2 shows a cross-sectional view illustrating an example of a schematic configuration of the shower head 13 described above.

[0036] The plasma processing apparatus 1 includes a chiller unit 50, a heater power supply 51, and a temperature controller 52.

[0037] The chiller unit 50 is connected to both ends of the flow path 15d of the main body 15 via pipes 53. The chiller unit 50 stores a refrigerant such as brine, and supplies the stored refrigerant to one of the pipes 53. The refrigerant supplied from the chiller unit 50 is supplied to the flow path 15d via one of the pipes 53, flows from one end of the flow path 15d to the other end, and returns to the chiller unit 50 via the other pipe 53. The chiller unit 50 is configured to be able to change the temperature of the stored refrigerant.

[0038] The heater power supply 51 is connected to the heater 15e of the main body 15. The heater power supply 51 supplies power to the heater 15e. The heater 15e generates heat in response to the power supplied from the heater power supply 51. In this embodiment, the heater 15e, the chiller unit 50, and the heater power supply 51 correspond to the supply unit of the present disclosure. Also, in this embodiment, the chiller unit 50 corresponds to the circulation unit of the present disclosure.

[0039] The main body 15 is also provided with a temperature sensor 54. The temperature sensor 54 detects the temperature of the main body 15. In this embodiment, the temperature sensor 54 corresponds to the detection unit of the present disclosure.

[0040] The temperature controller 52 is connected to a chiller unit 50, a heater power supply 51, and a temperature sensor 54. A set temperature is set in the temperature controller 52 by the processing unit 2a1. The temperature controller 52 controls the heater power supply 51 and the chiller unit 50 so that the main body 15 is at the set temperature. For example, the temperature controller 52 controls the chiller unit 50 to circulate a refrigerant at a predetermined temperature from the chiller unit 50 through the flow path 15d of the main body 15. The predetermined temperature may be lower than the set temperature and within the operating temperature range of the refrigerant. The predetermined temperature may be a constant temperature or may be changed depending on the set temperature. The temperature controller 52 then controls the heater power supply 51 to control the power supplied to the heater 15e so that the temperature of the main body 15 detected by the temperature sensor 54 is at the set temperature. In this embodiment, the temperature controller 52 corresponds to the temperature control unit of the present disclosure.

[0041] (Plasma processing operation) Next, a brief description will be given of the operation of the plasma processing apparatus 1 when performing plasma processing on the substrate W. The following describes the operation when performing plasma etching on the substrate W as the plasma processing.

[0042] Processing unit 2a1 controls exhaust system 40 to evacuate the inside of plasma processing chamber 10 to a predetermined vacuum level. When performing plasma processing, processing unit 2a1 reads the set temperature of main body 15 from the recipe stored in memory unit 2a2 and sets the read set temperature in temperature controller 52. Temperature controller 52 controls heater power supply 51 and chiller unit 50 so that the temperature of main body 15 detected by temperature sensor 54 becomes the set temperature.

[0043] The processing unit 2a1 controls the gas supply unit 20 to introduce a processing gas for etching into the plasma processing space 10s from the gas supply unit 20. The processing unit 2a1 controls the power supply 30 to supply power from the power supply 30 in conjunction with the introduction of the processing gas to generate plasma in the plasma processing chamber 10, and etch the substrate W.

[0044] In the plasma processing apparatus 1, the upper top plate 14 is worn out by repeated plasma processing, and the temperature of the upper top plate 14 rises accordingly.

[0045] As a comparative example, an example of temperature change of the upper top plate 14 when the set temperature is constant will be described. FIG. 3A is a diagram showing an example of the set temperature according to the comparative example. The vertical axis of FIG. 3A represents the set temperature of the main body 15. The horizontal axis represents the cumulative time (RFH (RF hours)) during which plasma processing is performed in the plasma processing apparatus 1 by supplying at least one RF signal from the RF power supply 31. The plasma processing apparatus 1 periodically performs internal maintenance by opening the plasma processing chamber 10 to the atmosphere. This maintenance includes cleaning the plasma processing chamber 10 and replacing consumable parts as necessary. The vertical axis of FIG. 3A indicates the maintenance cycles as "1st Cycle" and "2nd Cycle." In FIG. 3A, the set temperature of the temperature controller 52 is set to a constant temperature Ta.

[0046] FIG. 3B is a diagram showing an example of temperature change of the upper top plate 14 according to a comparative example. The vertical axis of FIG. 3B is the temperature of the upper top plate 14. The horizontal axis is the cumulative time (RFH) over which plasma processing has been performed. FIG. 3B shows the temperature change of the upper top plate 14 when the set temperature of the main body 15 is that shown in FIG. 3A. As shown in FIG. 3B, the upper top plate 14 wears more as the cumulative time (RFH) over which plasma processing has been performed increases, and when the set temperature is kept constant at temperature Ta, the temperature rises.

[0047] FIG. 4 is a diagram showing an example of temperature changes of the upper top plate 14 according to a comparative example. FIG. 4 shows temperature changes of the upper top plate 14 during one plasma processing cycle, which is divided into steps 1 to 4. The vertical axis of FIG. 4 represents the temperature of the upper top plate 14. The horizontal axis represents the elapsed time during one plasma processing cycle. FIG. 4 shows temperature changes of the upper top plate 14 during plasma processing, when the set temperature is Ta, for an unused upper top plate 14 (New CEL) and an upper top plate 14 (Used CEL) that has been used for one maintenance cycle. As shown in FIG. 4, the unused upper top plate 14 (New CEL) and the used upper top plate 14 (Used CEL) have different temperatures during some of the steps 1 to 4, and the temperature of the used upper top plate 14 is higher.

[0048] In the plasma processing apparatus 1, when the temperature of the upper top plate 14 rises, the processing characteristics of the plasma processing on the substrate W fluctuate.

[0049] For example, in the manufacture of 3D-NAND memories, plasma processing such as plasma etching of holes is performed. During this plasma processing, the composition ratio of radicals that reach the holes changes depending on the temperature of the upper top plate 14 in the plasma processing apparatus 1.

[0050] 5A and 5B are diagrams illustrating an example of the behavior of radicals in plasma due to differences in the temperature of the upper top plate 14. FIG. 5A illustrates a case where, for example, an upper top plate 14 that has been used for one maintenance cycle is used, and the upper top plate 14 is at a relatively high temperature. FIG. 5B illustrates a case where, for example, an unused upper top plate 14 is used, and the upper top plate 14 is at a relatively low temperature. FIGS. 5A and 5B schematically illustrate plasma generated in the plasma processing chamber 10. The plasma contains high-molecular-weight carbon and low-molecular-weight polymers. In FIGS. 5A and 5B, high-molecular-weight carbon is represented as "CxFy," and low-molecular-weight polymers are represented as "CF" and "CF2." The low-molecular-weight polymers function as etchants and protective films.

[0051] As shown in FIG. 5A, when the upper top plate 14 is at a high temperature, high molecular weight carbon (CxFy) and low molecular weight polymers (CF, CF2) reach the substrate W.

[0052] 5B, when the upper top plate 14 is at a low temperature, the high molecular weight carbon (CxFy) is attracted to the upper top plate 14. The low molecular weight polymers (CF, CF2) reach the substrate W.

[0053] 6A and 6B are diagrams illustrating an example of the processing result of plasma processing depending on the temperature of the upper top plate 14. FIGS. 6A and 6B show a substrate W. The substrate W has an etching target film 61 and a mask 62 stacked in this order on an underlayer 60. The underlayer 60 is a stop layer that suppresses etching of the underlying layer. The underlayer 60 is made of a metal film such as a tungsten film. A hole 63 is formed in the etching target film 61 and the mask 62. In FIGS. 6A and 6B, a protective film 64 made of a low-molecular polymer is formed at the bottom of the hole 63 by plasma processing.

[0054] 6A shows the results of plasma processing when the upper top plate 14 is at a high temperature, as shown in FIG. 5A. As shown in FIG. 6A, when the upper top plate 14 is at a high temperature, high molecular weight carbon adheres to the mask 62, narrowing the opening of the hole 63. As a result, only a thin protective film 64 can be formed at the bottom of the hole 63 because there is little low molecular weight polymer that penetrates into the hole 63.

[0055] 6B shows the results of plasma processing when the upper top plate 14 is at a low temperature, as shown in FIG. 5B. As shown in FIG. 6B, when the upper top plate 14 is at a low temperature, the high molecular weight carbon is attracted toward the upper top plate 14, so that the holes 63 remain open. As a result, many low molecular weight polymers can enter the holes 63, so that a thick protective film 64 can be formed at the bottom of the holes 63.

[0056] FIG. 7 is a diagram illustrating an example of the composition ratio of a film to be formed. FIG. 7 shows the composition ratio of the protective film 64 formed when the temperature of the upper top plate 14 is high (High Temp) and when the temperature of the upper top plate 14 is low (Low Temp). The high temperature is, for example, the temperature during plasma processing of an upper top plate 14 that has been used for one maintenance cycle. The low temperature is, for example, the temperature during plasma processing of an unused upper top plate 14. In FIG. 7, the composition ratio of high molecular weight carbon is represented as "C-CFy," and the composition ratios of low molecular weight polymers "CF," "CF2," and "CF3" are also shown. As shown in FIG. 7, when the upper top plate 14 is at a high temperature, the composition ratio of high molecular weight carbon is higher and the composition ratios of low molecular weight polymers (CF, CF2, CF3) are lower than when the upper top plate 14 is at a low temperature.

[0057] In this way, the composition ratio of the radicals that reach the holes 63 changes depending on the temperature of the upper top plate 14. As a result, the processing characteristics of the plasma processing on the substrate W fluctuate.

[0058] 6A and 6B, when the upper top plate 14 is at a low temperature, the protective film 64 can be formed thick, and therefore etching of the underlying layer can be suppressed even if the base film 60 of the substrate W is thin. On the other hand, when the upper top plate 14 is at a high temperature, etching of the underlying layer cannot be suppressed unless the base film 60 of the substrate W is formed thick.

[0059] Returning to Fig. 2, the control unit 2 according to the embodiment corrects the set temperature in accordance with wear and tear on the upper top plate 14 so that the temperature rise of the upper top plate 14 is reduced.

[0060] As the upper top plate 14 wears, it becomes thinner and the diameter of each gas hole 14a increases, which increases the gas conductance of the shower head 13. The pressure in the gas pipe 16 decreases.

[0061] The plasma processing apparatus 1 detects a value that changes in response to wear of the upper top plate 14. In this embodiment, the pressure in the gas pipe 16 is detected by the pressure gauge 17 as the value that changes in response to wear of the upper top plate 14.

[0062] The memory unit 2a2 stores a set temperature correction value that reduces a temperature rise of the upper top plate 14 due to wear of the upper top plate 14, corresponding to a value that changes in accordance with wear of the upper top plate 14. For example, the memory unit 2a2 stores a set temperature correction value that reduces a temperature rise of the upper top plate 14 due to wear of the upper top plate 14, corresponding to the pressure of the gas piping 16 during plasma processing. For example, the memory unit 2a2 stores correction value data that stores a set temperature correction value for each pressure of the gas piping 16 during plasma processing. The correction value is obtained by prior experiments, simulations, etc. using the plasma processing apparatus 1.

[0063] The processing unit 2a1 detects the pressure in the gas pipe 16 using the pressure gauge 17. The processing unit 2a1 refers to the memory unit 2a2 and identifies a correction value corresponding to the pressure in the gas pipe 16 detected by the pressure gauge 17. For example, the processing unit 2a1 refers to correction value data in the memory unit 2a2 and identifies a correction value corresponding to the pressure in the gas pipe 16. The processing unit 2a1 corrects the set temperature based on the identified correction value. For example, the processing unit 2a1 performs a correction to lower the set temperature of the temperature controller 52 by the identified correction value. For example, the processing unit 2a1 corrects the set temperature so that the temperature of the upper top plate 14 is constant during each period in which plasma processing is performed on the substrate W. Alternatively, the processing unit 2a1 corrects the set temperature to a constant temperature for each predetermined period. The predetermined period may be determined in any manner. For example, the predetermined period may be the period of a maintenance cycle in which maintenance is performed on the inside of the plasma processing chamber 10. In this embodiment, the processing unit 2a1 corresponds to the correction unit of the present disclosure.

[0064] The temperature controller 52 controls the heater power supply 51 and the chiller unit 50 so that the temperature of the main body 15 detected by the temperature sensor 54 becomes the corrected set temperature.

[0065] This reduces the temperature of the main body 15 in the shower head 13, thereby minimizing the temperature rise caused by wear of the upper top plate 14. In this way, the plasma processing apparatus 1 according to the embodiment can minimize the temperature rise caused by wear of the upper top plate 14, thereby minimizing fluctuations in the processing characteristics of the plasma processing.

[0066] (Temperature control process flow) Next, a specific example of the flow of the temperature control process for controlling the temperature of the main body part 15 will be described. FIG. 8 is a flowchart showing an example of the flow of the temperature control process according to the embodiment. The temperature control process according to the embodiment is executed by the processing part 2a1 at a predetermined timing during plasma processing. The predetermined timing may be any timing when the pressure of the gas flowing through the gas piping 16 has stabilized after the start of plasma processing. The predetermined timing may be, for example, several seconds to several tens of seconds after the start of plasma processing.

[0067] In step S100, the recipe for the plasma processing currently being performed stored in storage unit 2a2 is referenced, and the set temperature of main body unit 15 for the plasma processing currently being performed is read out.

[0068] In step S101, the pressure in the gas pipe 16 is detected by the pressure gauge 17.

[0069] In step S102, the correction value corresponding to the pressure in the gas pipe 16 detected by the pressure gauge 17 is identified by referring to the storage unit 2a2.

[0070] In step S103, the read set temperature of the main body 15 is corrected based on the specified correction value. For example, in step S103, the set temperature is corrected to be lowered by the specified correction value.

[0071] In step S104, the corrected set temperature is set in the temperature controller 52, and the process ends. As a result, the temperature controller 52 controls the heater power supply 51 and the chiller unit 50 so that the temperature of the main body 15 detected by the temperature sensor 54 becomes the corrected set temperature.

[0072] An example of a temperature change of the upper top plate 14 due to a temperature control process according to the embodiment will be described. FIG. 9A is a diagram showing an example of a set temperature according to the embodiment. The vertical axis of FIG. 9A is the set temperature of the main body unit 15. The horizontal axis is the cumulative time (RFH) during which plasma processing has been performed. The vertical axis of FIG. 9A indicates cycles for which maintenance is performed as "1st Cycle" and "2nd Cycle." FIG. 9A shows a case in which the set temperature is corrected so that the temperature of the upper top plate 14 is constant during each period during which the processing unit 2a1 performs plasma processing on a substrate W. In FIG. 9A, by correcting the set temperature for each plasma processing, the set temperature of the temperature controller 52 gradually decreases from temperature Ta to temperature Tb as the cumulative time increases.

[0073] 9B is a diagram showing an example of temperature change of the upper top plate 14 according to the embodiment. The vertical axis of FIG. 9B is the temperature of the upper top plate 14. The horizontal axis is the cumulative time (RFH) for which plasma processing has been performed. FIG. 9B shows the temperature change of the upper top plate 14 when the set temperature of the main body 15 is the same as that shown in FIG. 9A. As shown in FIG. 9B, the upper top plate 14 is able to suppress a rise in temperature due to wear of the upper top plate 14, even when the cumulative time for which plasma processing has been performed is long.

[0074] Another example of the temperature change of the upper top plate 14 due to the temperature control process according to the embodiment will be described. FIG. 10A is a diagram showing another example of the set temperature according to the embodiment. The vertical axis of FIG. 10A is the set temperature of the main body unit 15. The horizontal axis is the cumulative time (RFH) during which plasma processing has been performed. The vertical axis of FIG. 10A indicates the cycle in which maintenance is performed as "1st Cycle" and "2nd Cycle." FIG. 10A shows a case in which the processing unit 2a1 corrects the set temperature for each maintenance cycle and maintains the corrected set temperature until the next maintenance cycle. In FIG. 10A, the set temperature of the temperature controller 52 is corrected from temperature Ta to temperature Tc at the timing of the 1st Cycle.

[0075] FIG. 10B is a diagram showing another example of the temperature change of the upper top plate 14 according to the embodiment. The vertical axis of FIG. 10B represents the temperature of the upper top plate 14. The horizontal axis represents the cumulative time (RFH) during which plasma processing is performed. FIG. 10B shows the temperature change of the upper top plate 14 when the set temperature of the main body 15 is that shown in FIG. 10A. As shown in FIG. 10B, the temperature of the upper top plate 14 increases due to wear of the upper top plate 14 until the first cycle. However, by correcting the set temperature at the timing of the first cycle, the temperature of the upper top plate 14 at the start of the second cycle returns to the temperature at the start of the first cycle, and the temperature increase due to wear of the upper top plate 14 is suppressed.

[0076] FIG. 11 is a diagram showing an example of temperature changes of the upper top plate 14 according to the embodiment. FIG. 11 shows temperature changes of the upper top plate 14 during one plasma processing cycle divided into steps 1-4. The vertical axis of FIG. 11 represents the temperature of the upper top plate 14. The horizontal axis represents the elapsed time during one plasma processing cycle. FIG. 11 shows temperature changes of the upper top plate 14 during plasma processing when the set temperature is Ta for an unused upper top plate 14 (New CEL) and the set temperature is Tc for an upper top plate 14 (Used CEL) that has been used for one maintenance cycle. For the unused upper top plate 14 (New CEL), the temperature changes of the upper top plate 14 during plasma processing immediately after the upper top plate 14 is attached are shown. For the used upper top plate 14 (Used CEL), the temperature changes of the upper top plate 14 during plasma processing immediately after the first cycle of maintenance is performed are shown. As shown in Figure 11, the temperatures of the unused upper top plate 14 (New CEL) and the used upper top plate 14 (Used CEL) are close to each other in steps 1-4, which prevents the temperature rise due to wear of the used upper top plate 14.

[0077] In this way, the plasma processing apparatus 1 according to the embodiment can suppress fluctuations in the processing characteristics of the plasma processing because it can suppress temperature increases due to wear of the upper top plate 14. Furthermore, the plasma processing apparatus 1 according to the embodiment can suppress fluctuations in the processing characteristics of the plasma processing even for the upper top plate 14 that has been used for plasma processing for a long cumulative time, so it can extend the replacement period of the upper top plate 14.

[0078] In the above embodiment, the control unit 2 and the temperature controller 52 are separate units. However, this is not limiting. The control unit 2 may function as the temperature controller 52. In this case, the control unit 2 corresponds to the temperature control unit and correction unit of the present disclosure.

[0079] In the above embodiment, the temperature control process is performed in the processing unit 2a1 of the control unit 2. However, this is not limiting. The temperature of the main body 15 may be controlled by another device connected to the plasma processing apparatus 1. FIG. 12 is a diagram illustrating another configuration example of a plasma processing system according to an embodiment. The control unit 2 is connected to a computer 70 via a network N so as to be able to communicate with each other. The network N may be any type of communication network, such as a LAN or a Virtual Private Network (VPN), whether wired or wireless. The computer 70 may be, for example, a computer of an administrator managing the plasma processing apparatus 1 or a server computer managing multiple plasma processing apparatuses 1. The computer 70 includes a processing unit 70a, a memory unit 70b, and a communication interface 70c. The processing unit 70a may be a CPU. The memory unit 70b may include RAM, ROM, HDD, SSD, or a combination thereof. The communication interface 70c communicates with the control unit 2 via the network N. The processing unit 70a of the computer 70 may perform a temperature control process to correct the set temperature of the temperature controller 52. For example, the memory unit 70b stores a set temperature correction value that reduces a temperature rise of the upper top plate 14 due to wear of the upper top plate 14, corresponding to a value that changes in accordance with wear of the upper top plate 14. For example, the memory unit 70b stores a set temperature correction value that reduces a temperature rise of the upper top plate 14 due to wear of the upper top plate 14, corresponding to the pressure of the gas piping 16 during plasma processing. The processing unit 70a acquires the pressure of the gas piping 16 detected by the pressure gauge 17 via the control unit 2. The processing unit 70a performs a temperature control process and corrects the set temperature of the temperature controller 52 via the control unit 2. In this case, too, the plasma processing system according to the embodiment can reduce a temperature rise due to wear of the upper top plate 14, thereby suppressing fluctuations in the processing characteristics of the plasma processing.

[0080] In the above embodiment, the set temperature is corrected even when the value detected by the temperature sensor 54 changes slightly. However, this is not limiting. The processing unit 2a1 may correct the set temperature when the change in the value detected by the temperature sensor 54 exceeds a predetermined threshold.

[0081] In the above embodiment, the case where wear of the upper top plate 14 is detected from a change in the pressure of the gas in the gas pipe 16 has been described as an example. However, this is not limited to this. The plasma processing apparatus 1 may detect a value that changes in response to wear of the upper top plate 14 in addition to the pressure of the gas in the gas pipe 16, and correct the set temperature according to the detected value.

[0082] For example, as the upper top plate 14 of the shower head 13 wears and becomes thinner, the thermal resistance decreases, increasing the heat input from the plasma. For example, the temperature controller 52 controls the power supplied to the heater 15e to maintain the set temperature while circulating a constant-temperature coolant from the chiller unit 50 through the flow path 15d. In this case, when the upper top plate 14 wears and the heat input from the plasma to the shower head 13 increases, the temperature controller 52 reduces the power supplied to the heater 15e to reduce the heat generation amount of the heater 15e. In other words, as the upper top plate 14 wears, the power supplied to the heater 15e decreases. Therefore, the plasma processing apparatus 1 according to the embodiment may detect wear of the upper top plate 14 from changes in the power supplied to the heater 15e. For example, a detection unit for detecting the power supplied to the heater 15e is provided on the heater power supply 51 or on the wiring connecting the heater power supply 51 and the heater 15e. The memory unit 2a2 stores a correction value for the set temperature corresponding to the power supplied to the heater 15e. The processing unit 2a1 refers to the storage unit 2a2 to identify a correction value corresponding to the power supplied to the heater 15e detected by the detection unit, and corrects the set temperature based on the identified correction value. In this case, the plasma processing system according to the embodiment can also minimize the increase in temperature due to wear of the upper top plate 14, thereby suppressing fluctuations in the processing characteristics of the plasma processing.

[0083] Furthermore, for example, since the upper top plate 14 is worn during plasma processing, the longer the cumulative time of plasma processing, the greater the wear, and there is a correlation between the cumulative time and the degree of wear. Therefore, the plasma processing apparatus 1 according to this embodiment may detect wear of the upper top plate 14 from the cumulative time during which plasma processing has been performed. For example, the processing unit 2a1 measures the cumulative time during which plasma processing has been performed since the upper top plate 14 was replaced with an unworn upper top plate 14, such as an unused upper top plate 14, and corrects the set temperature downward according to the cumulative time. For example, the memory unit 2a2 stores a correction value for the set temperature corresponding to the cumulative time. When the upper top plate 14 of the shower head 13 is replaced with an unworn upper top plate 14 during maintenance, the processing unit 2a1 measures the cumulative time during which plasma processing has been performed since the replacement with the unworn upper top plate 14. The processing unit 2a1 refers to the memory unit 2a2 to identify a correction value corresponding to the cumulative time and corrects the set temperature based on the identified correction value. In this case as well, the plasma processing system according to the embodiment can suppress the temperature rise due to wear of the upper top plate 14 to a small extent, and therefore can suppress fluctuations in the processing characteristics of the plasma processing.

[0084] The above embodiment describes an example in which a temperature control process is performed at a predetermined timing during plasma processing. However, this is not limited to this. For example, processing unit 2a1 flows gas from gas supply unit 20 into gas pipe 16 at a predetermined flow rate and detects the pressure in gas pipe 16 using pressure gauge 17 at a timing separate from the plasma processing. Processing unit 2a1 then references memory unit 2a2 to identify a correction value corresponding to the pressure in gas pipe 16 detected by pressure gauge 17. Processing unit 2a1 may correct the set temperature during plasma processing based on the most recently identified correction value. For example, processing unit 2a1 periodically identifies a correction value at a timing separate from the plasma processing, and corrects the set temperature during plasma processing based on the most recently identified correction value. In this case, the plasma processing system according to the embodiment can minimize temperature increases due to wear on upper top plate 14, thereby suppressing fluctuations in the processing characteristics of the plasma processing.

[0085] In the above embodiment, the case where the heater power supply 51 supplies power to the heater 15e while circulating the coolant from the chiller unit 50 through the flow path 15d, causing the heater 15e to generate heat and adjust the temperature of the main body 15 has been described as an example. However, this is not limited to this. The plasma processing apparatus 1 may be configured to adjust the temperature of the main body 15 using either the coolant or the heater 15e. For example, the temperature controller 52 may adjust the temperature of the coolant in the chiller unit 50 so that the main body 15 reaches a set temperature.

[0086] The above describes the embodiment. As described above, the plasma processing system according to the embodiment includes a plasma processing chamber 10, a substrate support 11, an upper top plate 14 (upper member), and a main body 15 (support member). The plasma processing system according to the embodiment also includes a temperature adjustment unit (heater 15e, chiller unit 50, and heater power supply 51), a temperature controller 52 (temperature control unit), and a processing unit 2a1 (correction unit). Plasma is generated inside the plasma processing chamber 10. The substrate support 11 is provided within the plasma processing chamber 10 and supports a substrate W. The upper top plate 14 is provided at the top of the plasma processing chamber 10 opposite the substrate support 11 and has multiple gas holes 14a for discharging gas. The main body 15 supports the upper top plate 14. The temperature adjustment unit adjusts the temperature of the main body 15. The temperature controller 52 controls the temperature adjustment unit so that the main body 15 is at a set temperature. Processor 2a1 corrects the set temperature to reduce the temperature rise of upper top plate 14 due to wear of upper top plate 14. This allows the plasma processing system according to the embodiment to suppress fluctuations in the processing characteristics of the plasma processing.

[0087] The plasma processing system according to the embodiment further includes a detection unit and a memory unit 2a2. The detection unit detects a value that changes in response to wear of the upper top plate 14. The memory unit 2a2 stores a set temperature correction value corresponding to the value, which reduces the temperature rise of the upper top plate 14 due to wear of the upper top plate 14. The processing unit 2a1 identifies the correction value corresponding to the value detected by the detection unit by referring to the memory unit 2a2, and corrects the set temperature based on the identified correction value. This allows the plasma processing system according to the embodiment to suppress fluctuations in the processing characteristics of the plasma processing.

[0088] Furthermore, gas is supplied to upper top plate 14 via gas piping 16. A detection unit (pressure gauge 17) detects the pressure of the gas in gas piping 16. Memory unit 2a2 stores a correction value for the set temperature corresponding to the pressure. Processing unit 2a1 refers to memory unit 2a2 to identify a correction value corresponding to the pressure detected by the detection unit, and corrects the set temperature based on the identified correction value. As a result, the plasma processing system according to the embodiment can detect wear of upper top plate 14 from changes in the pressure of gas in gas piping 16 and can minimize temperature increases due to wear of upper top plate 14, thereby suppressing fluctuations in processing characteristics of plasma processing.

[0089] Furthermore, main body 15 has flow path 15d formed therein. The temperature adjustment unit includes chiller unit 50 (circulation unit). Chiller unit 50 is capable of changing the temperature of a coolant and circulates the coolant through flow path 15d. Temperature controller 52 adjusts the temperature of the coolant in chiller unit 50 so that main body 15 reaches a set temperature. As a result, the plasma processing system according to the embodiment can control the temperature of main body 15 to a set temperature by adjusting the temperature of the coolant circulated through flow path 15d.

[0090] The temperature adjustment unit also includes a heater 15e. The heater 15e is provided in the main body 15 and generates heat in response to the power supplied thereto. The temperature controller 52 controls the power supplied to the heater 15e so that the set temperature is reached while circulating a constant-temperature coolant from the chiller unit 50 through the flow path 15d. The detection unit detects the power supplied to the heater 15e. The memory unit 2a2 stores a correction value for the set temperature corresponding to the power supplied to the heater 15e. The processing unit 2a1 identifies a correction value corresponding to the power supplied to the heater 15e detected by the detection unit by referring to the memory unit 2a2, and corrects the set temperature based on the identified correction value. As a result, the plasma processing system according to the embodiment can detect wear of the upper top plate 14 from changes in the power supplied to the heater 15e and minimize temperature increases due to wear of the upper top plate 14, thereby suppressing fluctuations in the processing characteristics of the plasma processing.

[0091] Furthermore, processor 2a1 corrects the set temperature when a change in the value detected by the detector exceeds a predetermined threshold. This allows the plasma processing system according to the embodiment to correct the set temperature when a change in the detected value exceeds the threshold, thereby controlling minute changes in the set temperature of main body 15.

[0092] Furthermore, the processing unit 2a1 corrects the set temperature so that the temperature of the upper top plate 14 is constant during each period in which plasma processing is performed on the substrate W. This allows the plasma processing system according to the embodiment to suppress fluctuations in the processing characteristics of the plasma processing during each period in which plasma processing is performed.

[0093] Furthermore, the processing unit 2a1 periodically corrects the set temperature to a constant temperature for the predetermined period, thereby enabling the plasma processing system according to the embodiment to periodically correct the set temperature and suppress fluctuations in the processing characteristics of the plasma processing.

[0094] The predetermined period is a maintenance cycle in which the plasma processing chamber 10 is opened and periodic maintenance is performed on the inside of the plasma processing chamber 10. This allows the plasma processing system according to the embodiment to correct the set temperature for each maintenance cycle, thereby suppressing fluctuations in the processing characteristics of the plasma processing.

[0095] Furthermore, processing unit 2a1 measures the cumulative time during which plasma processing has been performed since replacement with an unconsumed upper top plate 14, and corrects the set temperature to a lower value in accordance with the cumulative time. This allows the plasma processing system according to the embodiment to minimize the increase in temperature due to wear of upper top plate 14, thereby suppressing fluctuations in processing characteristics of plasma processing.

[0096] It should be noted that the disclosed embodiments are illustrative in all respects and should not be considered limiting. Indeed, the above-described embodiments may be embodied in various forms. Furthermore, the above-described embodiments may be omitted, substituted, or modified in various forms without departing from the scope and spirit of the appended claims.

[0097] In the above embodiment, the plasma processing on the substrate W is described as being performed by plasma etching or the like, but is not limited to this. The plasma processing may be any processing using plasma. For example, the plasma processing may be a film formation processing, a modification processing, an ashing processing, or an annealing processing.

[0098] Furthermore, the following supplementary notes are disclosed regarding the above-described embodiment.

[0099] (Appendix 1) a chamber in which a plasma is generated; a substrate support provided in the chamber and configured to support a substrate; an upper member provided in an upper portion of the chamber opposite the substrate support member, the upper member having a plurality of gas holes formed therein for discharging gas; a support member for supporting the upper member; a temperature adjusting unit that adjusts the temperature of the support member; a temperature control unit that controls the temperature adjustment unit so that the support member reaches a set temperature; a correction unit that corrects the set temperature so that a temperature rise of the upper member due to wear of the upper member is reduced; A plasma processing system comprising:

[0100] (Appendix 2) a detection unit that detects a value that changes in response to wear of the upper member; a storage unit that stores a correction value of the set temperature corresponding to the value, the correction value reducing a temperature rise of the upper member due to wear of the upper member; The correction unit refers to the storage unit, identifies the correction value corresponding to the value detected by the detection unit, and corrects the set temperature based on the identified correction value. 2. The plasma processing system of claim 1.

[0101] (Appendix 3) The upper member is supplied with the gas through a gas pipe, the detection unit detects the pressure of the gas in the gas pipe, the storage unit stores a correction value of the set temperature corresponding to the pressure; The correction unit refers to the storage unit to identify the correction value corresponding to the pressure detected by the detection unit, and corrects the set temperature based on the identified correction value. 3. The plasma processing system of claim 2.

[0102] (Appendix 4) The support member has a flow path formed therein, the temperature adjustment unit is capable of changing the temperature of the coolant and includes a circulation unit that circulates the coolant through the flow path; The temperature control unit adjusts the temperature of the refrigerant in the circulation unit so that the support member reaches a set temperature. 3. The plasma processing system of claim 2.

[0103] (Appendix 5) the temperature adjustment unit includes a heater that is provided on the support member and generates heat in response to supplied power, the temperature control unit controls the power supplied to the heater so as to achieve the set temperature while circulating the refrigerant at a constant temperature from the circulation unit through the flow path; the detection unit detects the power supplied to the heater; the storage unit stores a correction value of the set temperature corresponding to the power supplied to the heater; The correction unit refers to the storage unit, identifies the correction value corresponding to the power supplied to the heater detected by the detection unit, and corrects the set temperature based on the identified correction value. 5. The plasma processing system of claim 4.

[0104] (Appendix 6) The correction unit corrects the set temperature when a change in the value detected by the detection unit exceeds a predetermined threshold. 6. A plasma processing system according to any one of claims 2 to 5.

[0105] (Appendix 7) The correction unit corrects the set temperature so that the temperature of the upper member is constant during each period in which plasma processing is performed on the substrate. 7. A plasma processing system according to any one of claims 1 to 6.

[0106] (Appendix 8) The correction unit corrects the set temperature to a constant temperature for each predetermined period. 7. A plasma processing system according to any one of claims 1 to 6.

[0107] (Appendix 9) The predetermined period is the period of a maintenance cycle in which the chamber is opened and maintenance is performed periodically on the inside of the chamber. 9. The plasma processing system of claim 8.

[0108] (Appendix 10) The correction unit measures a cumulative time during which plasma processing has been performed since the upper member was replaced with an unconsumed one, and corrects the set temperature to a lower value in accordance with the cumulative time. 2. The plasma processing system of claim 1.

[0109] (Appendix 11) a chamber in which a plasma is generated; a substrate support provided in the chamber and configured to support a substrate; an upper member provided in an upper portion of the chamber opposite the substrate support member, the upper member having a plurality of gas holes formed therein for discharging gas; a support member for supporting the upper member; a temperature adjusting unit that adjusts the temperature of the support member; a temperature control unit that controls the temperature adjustment unit so that the support member reaches a set temperature; a correction unit that corrects the set temperature so that a temperature rise of the upper member due to wear of the upper member is reduced; A plasma processing apparatus comprising: [Explanation of symbols]

[0110] 1. Plasma processing equipment 2. Control section 2a, 70 Computer 2a1, 70a Processing section 2a2, 70b storage section 2a3, 70c communication interface 10 Plasma Processing Chamber 11 Substrate support 13. Shower head 14 Top plate 14a, 15a gas holes 15 Main body 15b Gas diffusion chamber 15c Gas supply port 15d, 1110a flow channel 15e Heater 16 Gas piping 19 Insulating materials 20 Gas supply unit 21 Gas Source 22 Flow Controller 30 power supply 31 RF power supply 31a First RF generation unit 31b Second RF generation unit 32 DC power supply 32a First DC generation unit 32b Second DC generation unit 40 Exhaust system 50 Chiller Unit 51 Heater power supply 52 Temperature Controller 53 Piping 54 Temperature Sensor 60 Base film 61 Etching target film 62 Mask 63 holes 64 Protective film 111 Main body 111a Central area 111b Annular Region 112 Ring Assembly 1110 Foundation 1111 Electrostatic chuck 1111a Ceramic components 1111b Electrostatic electrode N Network W substrate

Claims

1. a chamber in which a plasma is generated; a substrate support provided in the chamber and configured to support a substrate; an upper member provided in an upper portion of the chamber opposite the substrate support member, the upper member having a plurality of gas holes formed therein for discharging gas; a support member for supporting the upper member; a temperature adjusting unit that adjusts the temperature of the support member; a temperature control unit that controls the temperature adjustment unit so that the support member reaches a set temperature; a correction unit that corrects the set temperature so that a temperature rise of the upper member due to wear of the upper member is reduced; A plasma processing system comprising:

2. a detection unit that detects a value that changes in response to wear of the upper member; a storage unit that stores a correction value of the set temperature corresponding to the value, the correction value reducing a temperature rise of the upper member due to wear of the upper member; The correction unit refers to the storage unit, identifies the correction value corresponding to the value detected by the detection unit, and corrects the set temperature based on the identified correction value.

10. The plasma processing system of claim 1.

3. The upper member is supplied with the gas through a gas pipe, the detection unit detects the pressure of the gas in the gas pipe, the storage unit stores a correction value of the set temperature corresponding to the pressure; The correction unit refers to the storage unit to identify the correction value corresponding to the pressure detected by the detection unit, and corrects the set temperature based on the identified correction value.

3. The plasma processing system of claim 2.

4. The support member has a flow path formed therein, the temperature adjustment unit is capable of changing the temperature of the coolant and includes a circulation unit that circulates the coolant through the flow path; The temperature control unit adjusts the temperature of the refrigerant in the circulation unit so that the support member reaches a set temperature.

3. The plasma processing system of claim 2.

5. the temperature adjustment unit includes a heater that is provided on the support member and generates heat in response to supplied power, the temperature control unit controls the power supplied to the heater so as to achieve the set temperature while circulating the refrigerant at a constant temperature from the circulation unit through the flow path; the detection unit detects the power supplied to the heater; the storage unit stores a correction value of the set temperature corresponding to the power supplied to the heater; The correction unit refers to the storage unit, identifies the correction value corresponding to the power supplied to the heater detected by the detection unit, and corrects the set temperature based on the identified correction value.

5. The plasma processing system of claim 4.

6. The correction unit corrects the set temperature when a change in the value detected by the detection unit exceeds a predetermined threshold.

3. The plasma processing system of claim 2.

7. The correction unit corrects the set temperature so that the temperature of the upper member is constant during each period in which plasma processing is performed on the substrate.

10. The plasma processing system of claim 1.

8. The correction unit corrects the set temperature to a constant temperature for each predetermined period.

10. The plasma processing system of claim 1.

9. The predetermined period is the period of a maintenance cycle in which the chamber is opened and maintenance is performed periodically on the inside of the chamber.

9. The plasma processing system of claim 8.

10. The correction unit measures a cumulative time during which plasma processing has been performed since the upper member was replaced with an unconsumed one, and corrects the set temperature to a lower value in accordance with the cumulative time.

10. The plasma processing system of claim 1.

11. a chamber in which a plasma is generated; a substrate support provided in the chamber and configured to support a substrate; an upper member provided in an upper portion of the chamber opposite the substrate support member, the upper member having a plurality of gas holes formed therein for discharging gas; a support member for supporting the upper member; a temperature adjusting unit that adjusts the temperature of the support member; a temperature control unit that controls the temperature adjustment unit so that the support member reaches a set temperature; a correction unit that corrects the set temperature so that a temperature rise of the upper member due to wear of the upper member is reduced; A plasma processing apparatus comprising:

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