Vapor deposition apparatus and method for manufacturing light-emitting device

Abstract

To provide a technology that is advantageous for vapor deposition using a mask.SOLUTION: A vapor deposition apparatus includes: an electrostatic chuck table 109 including a holding surface 191 for holding a deposition substrate 108; and an abutment part 110 for causing a mask 101 to abut on the deposition substrate 108, where the holding surface 191 has a curved concave surface of which center is recessed.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a vapor deposition apparatus and a method for manufacturing a light-emitting device. [Background technology]

[0002] Light-emitting devices including light-emitting elements using organic electroluminescence (EL) elements are known. Patent Document 1 discloses the formation of an organic material on a substrate to be deposited by vapor deposition using a vapor deposition device. In order to manufacture high-definition light-emitting devices, it is necessary to closely attach the mask to the substrate to be deposited during vapor deposition using a mask, or to make the gap between the substrate and the mask uniform. Patent Document 1 discloses the use of a magnetic plate to attract the mask along the substrate to be deposited, thereby bending the mask and the substrate to the magnetic plate side and bringing the mask into close contact with the substrate to be deposited. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2007-119893 Summary of the Invention [Problem to be solved by the invention]

[0004] To increase the resolution of light-emitting devices, it is necessary to make the mask thinner. In the configuration shown in Patent Document 1, if the mask is made thinner, the force with which the mask bends the substrate to be vapor-deposited weakens, and there is a possibility that the mask will not adhere closely to the substrate to be vapor-deposited, resulting in gaps. Furthermore, if the mask bends significantly due to its thinness, there is a possibility that the mask itself will be damaged.

[0005] An object of the present invention is to provide a technique that is advantageous for vapor deposition using a mask. [Means for solving the problem]

[0006] In view of the above-described problems, one aspect of the present invention relates to a vapor deposition apparatus including an electrostatic chuck table having a holding surface for holding a substrate to be vapor deposited, and a contact portion for contacting a mask with the substrate to be vapor deposited, wherein the holding surface has a curved, concave surface with a recess in the center. [Effects of the Invention]

[0007] According to the present disclosure, it is possible to provide a technique that is advantageous for vapor deposition using a mask. [Brief explanation of the drawings]

[0008] [Figure 1] FIG. 1 is a diagram showing an example of the configuration of a vapor deposition apparatus according to an embodiment of the present invention. [Figure 2] FIG. 2 is a diagram showing an example of the configuration of a mask used in the vapor deposition apparatus of FIG. 1. [Figure 3] 2 is a diagram showing the relationship between a mask and a substrate to be vapor-deposited in the vapor deposition apparatus of FIG. 1. [Figure 4] FIG. 10 is a diagram showing a configuration example of a vapor deposition apparatus of a comparative example. [Figure 5] FIG. 10 is a diagram showing the relationship between a mask and a substrate to be vapor-deposited in a vapor deposition apparatus of a comparative example. [Figure 6] 2A to 2C are diagrams showing a method for manufacturing a mask used in the vapor deposition apparatus of FIG. 1. [Figure 7] 2A to 2C are diagrams showing a method for manufacturing a mask used in the vapor deposition apparatus of FIG. 1. [Figure 8] FIG. 1 is a diagram showing an example of the configuration of a vapor deposition apparatus according to an embodiment of the present invention. [Figure 9] FIG. 9 is a diagram showing an example of the configuration of a mask used in the vapor deposition apparatus of FIG. 8. [Figure 10] FIG. 10 is a diagram showing a configuration example of a vapor deposition apparatus of a comparative example. [Figure 11] 1A to 1C are diagrams illustrating an example of a vapor deposition apparatus according to an embodiment of the present invention. [Figure 12] 1A to 1C are diagrams illustrating an example of a vapor deposition apparatus according to an embodiment of the present invention. [Figure 13] FIG. 2 is a cross-sectional view showing an example of the configuration of a pixel of a light-emitting device manufactured using the vapor deposition apparatus of the present embodiment. [Figure 14] FIG. 14 is a diagram showing an example of an image forming apparatus using the light emitting device of FIG. [Figure 15] FIG. 14 is a diagram showing an example of a display device using the light-emitting device of FIG. [Figure 16] FIG. 14 is a diagram showing an example of a photoelectric conversion device using the light-emitting device of FIG. [Figure 17] 14A to 14C are diagrams illustrating examples of electronic devices using the light-emitting device in FIG. 13. [Figure 18] FIG. 14 is a diagram showing an example of a display device using the light-emitting device of FIG. [Figure 19] FIG. 14 is a diagram showing an example of a lighting device using the light-emitting device of FIG. [Figure 20] 14 is a diagram showing an example of a moving object using the light emitting device of FIG. 13. [Figure 21] FIG. 14 is a diagram showing an example of a wearable device using the light-emitting device of FIG. DETAILED DESCRIPTION OF THE INVENTION

[0009] Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. Note that the following embodiments do not limit the scope of the invention claimed. Although multiple features are described in the embodiments, not all of these multiple features are necessarily essential to the invention, and multiple features may be combined arbitrarily. Furthermore, in the accompanying drawings, the same reference numerals are used to designate the same or similar components, and redundant explanations will be omitted.

[0010] A vapor deposition apparatus according to an embodiment of the present disclosure will be described with reference to FIGS. 1 to 12. FIG. 1 illustrates an example of vapor deposition on a substrate 108 to be deposited using a vapor deposition apparatus 100 according to the present embodiment. Vapor deposition using the vapor deposition apparatus 100 is used, for example, to manufacture a light-emitting device in which a plurality of pixels, each of which includes an organic layer including a light-emitting layer, are arranged on a substrate. The light-emitting device is, for example, an organic electroluminescence (EL) light-emitting device. Here, the substrate of the light-emitting device may correspond to the substrate 108 to be deposited. Vapor deposition is used to form organic layers including light-emitting layers. For example, in a full-color organic EL light-emitting device, to form fine light-emitting elements of each color (e.g., red, green, and blue) with high precision, it is necessary to precisely align a high-resolution mask 101 (also referred to as a vapor deposition mask) on the substrate (substrate 108 to be deposited). Furthermore, it is necessary to closely contact the substrate 108 to be deposited, or to uniformly space the gap between the substrate 108 to be deposited and the mask 101.

[0011] Therefore, the deposition apparatus 100 of this embodiment is equipped with an electrostatic chuck table 109 having a holding surface 191 for holding the deposition target substrate 108, and a contact portion 110 for bringing the mask 101 into contact with the deposition target substrate 108. This allows the deposition apparatus 100 to perform deposition with the mask 101 facing the deposition target substrate 108. Here, the holding surface 191 for holding the deposition target substrate 108 of the electrostatic chuck table 109 included in the deposition apparatus 100 of this embodiment has a curved surface with a concave shape that is recessed in the center.

[0012] As shown in FIG. 1, the substrate 108 to be deposited is held by an electrostatic chuck table 109 with the deposition surface facing downward. A holding surface 191 of the electrostatic chuck table 109 that holds the substrate 108 to be deposited has an arc shape in a cross section intersecting the holding surface 191. Furthermore, as will be described later, when the outer shapes of the holding surface 191 and the mask 101 are circular, the holding surface 191 may be a part of a sphere. In this case, the entire holding surface 191 of the electrostatic chuck table 109 that holds the substrate 108 to be deposited may be a part of a sphere. The holding surface 191 (arc shape or spherical surface) has a concave shape with a radius of curvature R, as shown in FIG. 1. The specific radius of curvature will be described later.

[0013] The substrate 108 faces the mask 101 in a concave shape following the shape of the holding surface 191. A magnet is arranged on the side of the electrostatic chuck table 109 opposite the substrate 108 to serve as a contact portion 110 for contacting the mask 101 with the substrate 108. A magnetic layer 106 is arranged on the mask 101. Therefore, it can be said that the contact portion 110 includes a magnet that attracts the magnetic layer 106 in a direction toward the holding surface 191.

[0014] An end of the mask 101 is held by a mask holder 113 made of, for example, a magnetic material. A fine movement mechanism 130 is connected to the mask holder 113, and the mask 101 can be aligned with the deposition target substrate 108 by the fine movement mechanism 130. The mask 101 is attracted together with the mask holder 113 by the magnetic force of a magnet (contact portion 110) and comes into contact with the deposition target substrate 108. At this time, the mask 101 faces and contacts the deposition target substrate 108 with a convex shape that follows the concave shape of the deposition target substrate 108.

[0015] Next, a mask 101 used in the vapor deposition apparatus 100 of this embodiment will be described. FIG. 2(a) is a schematic plan view of the mask 101. FIG. 2(b) is a schematic view showing a cross section taken along line A-A' in FIG. 2(a). The mask 101 has a region (hereinafter referred to as a membrane region 102) in which a plurality of openings 104 are arranged. During vapor deposition, the vapor deposition material passes from the vapor deposition source through the openings 104 and reaches the substrate 108 to be vapor-deposited. To perform vapor deposition with high precision and accuracy, the membrane region 102 needs to be as thin as possible. Furthermore, the mask 101 has regions (hereinafter referred to as beam regions 103) that are thicker than the membrane region 102 and are arranged in a lattice pattern (grid pattern), thereby ensuring strength relative to the thin membrane region 102. For example, as shown in FIGS. 2(a) and 2(b), a plurality of membrane regions 102 are arranged, and the beam regions 103 are arranged between adjacent membrane regions 102 among the plurality of membrane regions 102.

[0016] The beam region 103 has recesses 105 formed as lattice-shaped grooves. A magnetic layer 106 having a thickness greater than the depth of the recesses 105 is embedded in the recesses 105. The mask 101 also includes a contact layer 107 that is disposed to cover the magnetic layer 106 and that contacts the substrate 108 during deposition. The contact layer 107 has a lower hardness than the magnetic layer 106.

[0017] Next, the state in which the mask 101 abuts against the substrate 108 to be deposited will be described with reference to Fig. 3. The openings 104 of the mask 101 and the deposition area 111 of the substrate 108 to be deposited are aligned using a fine movement mechanism 130 connected to the mask holder 113. The magnetic layer 106 of the abutting layer 107 of the mask 101 is attracted to a magnet functioning as an abutting portion 110 arranged on the back surface of the electrostatic chuck table 109, and the abutting layer 107 abuts against the substrate 108 to be deposited. In addition, the magnetic layer 106, which is thicker than the depth of the recess 105 provided in the beam region 103, and the contact layer 107 also act as spacers to prevent the membrane region 102 of the mask 101 from directly contacting the deposition substrate 108.

[0018] In the deposition apparatus 100 of this embodiment, the holding surface 191 of the electrostatic chuck table 109 and the deposition target substrate 108 are concavely curved with a curvature radius R. Therefore, the mask 101 that contacts the deposition target substrate 108 necessarily has a convex shape with respect to the deposition target substrate 108. The convex shape of the mask 101 applies tension to the membrane regions 102, making them less likely to bend. In other words, each membrane region 102 is kept flat. In other words, because the holding surface 191 of the electrostatic chuck table 109 is a concavely curved surface with a curvature radius R, the distance between the membrane regions 102 of the mask 101 and the deposition target substrate 108 is kept uniform.

[0019] Here, because the radius of curvature R of the holding surface 191 is large relative to the size of the membrane region 102, the description will be given assuming that the distance between the center and outer edge of the membrane region 102 and the substrate 108 to be deposited is approximately constant. Microscopically, the distance between the surface of the substrate 108 to be deposited, which is curved following the curve of the holding surface 191, and the flat membrane region 102 may vary between the center and outer edge of the membrane region 102. However, as in the comparative example described below, irregular bending of the membrane region 102 is suppressed, so even if the distance varies between the center and outer edge of the membrane region 102, it may be easy to control the deposition to form a uniform film.

[0020] Consider a comparative example of a vapor deposition apparatus 100' in which the holding surface 191' of the electrostatic chuck table 109' is flat, as shown in FIG. 4 . In the comparative example of the vapor deposition apparatus 100', when the mask 101 contacts the substrate 108, the mask 101 is substantially flat relative to the substrate 108 held by the flat holding surface 191'. However, in this case, the mask 101 is not completely flat and has a high degree of waviness. As a result, tension is not applied to the membrane region 102, and not only does the mask 101 bend, but the bending direction also varies depending on the location. As a result, as shown in FIG. 5 , the distance between the membrane region 102 of the mask 101 and the substrate 108 varies, making it difficult to form a uniform vapor deposition film on the deposition area 111 with good alignment accuracy.

[0021] On the other hand, in this embodiment, the mask 101 bends to form a convex shape relative to the deposition target substrate 108. As a result, tension is applied to the membrane region 102, and the distance between the membrane region 102 and the deposition target substrate 108 is kept uniform. Therefore, the deposition apparatus 100 shown in this embodiment makes it possible to form a uniform deposition film on the deposition target area 111 with high alignment accuracy.

[0022] Next, the membrane region 102 and the beam region 103 of the mask 101 used in the deposition apparatus 100 of this embodiment will be further described. As described above, the membrane region 102 needs to be maintained in a flat state. Therefore, the membrane region 102 may be made of a non-magnetic material with a volume magnetic susceptibility of 1 or less, which is unlikely to deform due to the magnetic field from the magnet that functions as the contact portion 110 for contacting the contact layer 107 of the mask 101 with the deposition substrate 108. The material constituting the membrane region 102 may also be made of a material that is unlikely to deform. For example, the membrane region 102 may be selected from highly rigid materials with a Young's modulus of 50 GPa or more. Furthermore, the membrane region may be made of a material with a Young's modulus exceeding 100 GPa. The membrane region 102 may also have a film configuration that exerts tensile stress as a whole. The tensile stress applied to the membrane region 102 makes it easier for the membrane region 102 to maintain a flat state. Furthermore, since the openings 104 need to be formed with high accuracy and precision, the material forming the membrane region 102 can be selected from materials that can be processed with high accuracy and precision.

[0023] The beam region 103 may be a region that determines the rigidity and weight of the entire mask 101. Therefore, it may be made of a material that has the same rigidity as the membrane region 102 but is lighter in specific gravity. Furthermore, if the beam region 103 is made of a material that has a small linear expansion coefficient or is similar to that of the deposition substrate 108, it is possible to suppress misalignment between the mask 101 and the deposition substrate 108 due to heat generation during deposition.

[0024] The magnetic layer 106 may be made of a material that is easily attracted by the magnet (contact portion 110). Therefore, a material having a volume magnetic susceptibility of 10 or more may be selected for the magnetic layer 106. Furthermore, a material having a volume magnetic susceptibility of 100 or more may be selected for the magnetic layer 106. Specifically, iron, nickel, cobalt, and alloys thereof may be selected for the magnetic layer 106. Here, the above-mentioned values ​​of the volume magnetic susceptibility are values ​​in the SI system of units.

[0025] The abutting layer 107 is the part of the mask 101 that directly abuts against the substrate 108. Therefore, the abutting layer 107 is required not to damage the substrate 108. Therefore, a material that is less hard than the material that constitutes the base material of the mask 101 and the magnetic layer 106 can be selected as the material that constitutes the abutting layer.

[0026] Next, the deposition target substrate 108 used in the deposition apparatus 100 of this embodiment will be described. The deposition target substrate 108 may be a silicon wafer, a glass substrate, or the like. The holding surface 191 of the electrostatic chuck table 109 of the deposition apparatus 100 of this embodiment is a concave curved surface with respect to the deposition target substrate 108. Therefore, the deposition target substrate 108 may be bent in a convex shape with respect to the holding surface 191 so that it can be easily held on the holding surface 191. The deposition target substrate 108 may be bent by forming a film that imparts compressive stress to one of the two main surfaces of the deposition target substrate 108, the main surface that is held by the electrostatic chuck table 109. Alternatively, the deposition target substrate 108 may be bent by forming a film that imparts tensile stress to one of the two main surfaces of the deposition target substrate 108, the main surface that faces the deposition target area 111.

[0027] Next, the electrostatic chuck table 109 will be described. The electrostatic chuck table 109 is generally made of a ceramic material with an outer diameter approximately the same as that of the deposition target substrate 108, and an internal electrode is formed inside the ceramic. By applying a voltage to the internal electrode, a Coulomb force or a Johnsen-Rahbek force is generated between the electrostatic chuck table 109 and the deposition target substrate 108, thereby holding the deposition target substrate 108. In this embodiment, the holding surface 191 of the electrostatic chuck table 109 is machined to have a concave curved surface with a curvature radius R. Therefore, the distance between the center of the holding surface 191 and the deposition target substrate 108 tends to be large. Therefore, a Johnsen-Rahbek force type electrostatic chuck with a high suction force may be selected as the electrostatic chuck table 109.

[0028] Furthermore, the electrostatic chuck table 109 may be configured so that the force per unit area for attracting the deposition target substrate 108 is greater at the center of the holding surface 191 than at the outer edge. For example, an internal electrode may be configured to be disposed inside the ceramic so that a higher voltage can be applied to the center of the holding surface 191. Also, the ceramic material and its arrangement may be adjusted so that, for example, the conductivity of the ceramic in the center of the holding surface 191 is higher than that of the ceramic in the outer edge.

[0029] In the deposition apparatus 100 of this embodiment, the reason why the holding surface 191 of the electrostatic chuck table 109 has a concave curved surface is that, as described above, the mask 101 is formed into a convex shape conforming to the radius of curvature R, and tension is applied to the membrane region 102. Here, when forming the mask 101 into a convex shape, the radius of curvature R needs to be controlled with high precision. This is because, if the radius of curvature R is too large, sufficient tension may not be applied to the membrane region 102 of the mask 101. On the other hand, if the radius of curvature R is too small, excessive stress may be applied to the mask 101 (for example, the membrane region 102), which may cause breakage, plastic deformation, or the like.

[0030] On the other hand, the convex shape of the mask 101 during deposition is uniquely determined by the radius of curvature R of the holding surface 191. Because the holding surface 191 is made of a highly rigid ceramic material, the radius of curvature R of the holding surface 191 is always kept constant regardless of whether the deposition target substrate 108 is being held or the mask 101 is in contact with it. In other words, the electrostatic chuck table 109 of the deposition apparatus 100 of this embodiment can always control the convex shape of the mask 101 to be constant, and can apply sufficient tension to the membrane region 102 without causing breakage or plastic deformation.

[0031] The magnet functioning as the abutment portion 110 is a member for attracting the mask 101 and the mask holder 113 toward the electrostatic chuck table 109 and the substrate 108 to be deposited. The magnet (abutment portion 110) is connected to, for example, a vertical movement mechanism in FIG. 1 that intersects with the holding surface 191. This allows the magnet (abutment portion 110) to move toward or away from the electrostatic chuck table 109. With the mask 101 and the mask holder 113 in proximity to the substrate 108 to be deposited, the magnet functioning as the abutment portion 110 is brought close to (for example, into contact with) the electrostatic chuck table 109. As a result, the mask holder 113 and the mask 101 are attracted toward the substrate 108 to be deposited by the magnetic force of the magnet (abutment portion 110), and the mask 101 comes into contact with the substrate 108 to be deposited.

[0032] The mask holder 113 not only fixes the mask 101 but also receives magnetic force from the magnet (contact portion 110) to reliably contact the outer edge of the mask 101 with the outer edge of the deposition substrate 108. For this reason, the mask holder 113 may be made of a material with a volume magnetic susceptibility of 100 or more. Specifically, iron, nickel, cobalt, and alloys thereof can be selected for the mask holder 113. In addition, a fine movement mechanism 130 can be connected to the mask holder 113 so that the mask 101 and the deposition substrate 108 can be aligned.

[0033] The vapor deposition apparatus 100 of this embodiment configured as described above can bring the mask 101 into uniform contact with the deposition substrate 108 without destroying the mask 101. In other words, organic electronic devices such as light-emitting devices manufactured using the vapor deposition apparatus 100 of this embodiment can be manufactured with high precision and with improved reliability.

[0034] Next, examples of this embodiment will be described. First, an example of a method for manufacturing the mask 101 will be described with reference to Figures 6(a) to 6(d) and Figures 7(a) to 7(c).

[0035] A silicon-on-insulator (SOI) substrate containing silicon was used as the base material of the mask 101. In this example, the device layer 114 of the SOI substrate 120 was the main constituent material of the membrane region 102. Therefore, the film thickness of the device layer 114 of the SOI substrate 120 was set to be thicker than that of the box layer 115. The device layer 114 is a layer of single-crystal silicon, which has a high Young's modulus, a low specific gravity, and is easy to microfabricate, making it suitable as a constituent material of the membrane region 102. The Young's modulus and indentation hardness of the device layer 114 were measured using a nanoindentation method and were found to be 135 GPa and 11.3 GPa, respectively. The thickness of the device layer 114 was set to 3.0 μm.

[0036] First, as shown in FIG. 6( a), a silicon nitride film was formed as a stress adjustment layer 117 on the surface of the device layer 114 of the SOI substrate 120. Silicon nitride can be formed, for example, by plasma CVD. The stress adjustment layer 117 makes it possible to impart tensile stress to the device layer 114 (and the box layer 115), which serves as the base material of the mask 101. As a result, when vapor deposition is performed in the vapor deposition apparatus 100 using the completed mask 101, the membrane region 102 is more likely to remain flat. In this example, the film stress imparted by the stress adjustment layer 117 to the device layer 114 (and the box layer 115) is a tensile stress of 150 MPa. The Young's modulus of the stress adjustment layer 117 was 140 GPa, and the indentation hardness was 7.5 GPa.

[0037] After forming the stress adjustment layer 117, the recess 105 and the opening 104 were patterned using photolithography or various etching methods, as shown in Fig. 6(b). For example, Reactive Ion Etching (RIE) using a reactive gas was used to etch not only the stress adjustment layer 117 and the device layer 114, but also parts of the box layer 115 and the handle layer 116.

[0038] Next, a seed layer was formed in the recess 105, and a nickel-based magnetic layer 106 was formed by electroplating to a thickness of 1.0 μm greater than the recess 105. The nickel-based magnetic layer 106 had an indentation hardness of 6.1 GPa. After the magnetic layer 106 was formed, electroless eutectoid plating of nickel and PTFE was performed on the magnetic layer 106 to form the abutment layer 107, as shown in FIG. 6(c). The abutment layer 107 had a thickness of 1.0 μm and an indentation hardness of 2.6 GPa. In this example, a nickel-PTFE eutectoid was used for the abutment layer 107. However, this is not a limitation, and any material having a hardness lower than that of the base material of the mask 101 and the magnetic layer 106 may be used. For example, the abutment layer 107 may be made of parylene resin, polyimide resin, acrylic resin, or the like.

[0039] After the formation of the contact layer 107, a resist was sprayed by air spraying to cover the entire surface of the SOI substrate 120 on the side of the device layer 114, thereby forming a protective layer 118. Furthermore, as shown in FIG. 6(d), a conductive tape 119 was attached to cover the protective layer 118.

[0040] Next, the SOI substrate 120 with the conductive tape 119 attached was processed on the side of the handle layer 116. First, as shown in Fig. 7(a), a resist pattern 121 was formed on the surface of the handle layer 116 by photolithography or the like in an area of ​​the mask 101 that would become the beam area 103. An opening in the resist pattern 121 would become the membrane area 102.

[0041] After the resist pattern 121 was formed, as shown in Fig. 7(b), the handle layer 116 was etched down to the box layer 115. The handle layer 116 was etched using the Bosch method.

[0042] Next, the conductive tape 119 was peeled off from the SOI substrate 120, and the resist pattern 121 and the protective layer 118 were stripped off with an organic solvent, thereby obtaining the mask 101 shown in FIG.

[0043] The mask 101 according to the example of this embodiment obtained in this manner is processed using a silicon process, and therefore can be made highly precise. On the other hand, the membrane region 102 is mainly composed of a thin single-crystal silicon film of 3.0 μm. Therefore, although it has high rigidity, it is prone to bending by 3.0 μm or more in the convex or concave direction, and is particularly prone to cracking in the crystal direction.

[0044] Next, using the obtained deposition mask 101, deposition was attempted on a silicon wafer, which was a deposition target substrate 108. In this experiment, the radius of curvature R of the holding surface 191 of the electrostatic chuck table 109 was changed from 15 m to 700 m, and a comparison was made. The comparison results are shown in FIG.

[0045] First, an evaluation was conducted to determine whether the holding surface 191 of the electrostatic chuck table 109, which has a concave curved surface, can hold a deposition target substrate 108 using a silicon wafer. As a result, there were cases where the electrostatic chuck f, whose holding surface 191 had a curvature radius of less than 25 m, was unable to hold a silicon wafer. For this reason, in FIG. 11, the wafer holding ability of the electrostatic chuck f is marked with "△". On the other hand, the electrostatic chucks a to e, whose holding surfaces 191 of the electrostatic chuck table 109 had a curvature radius R of 25 m or more and 700 m or less, were able to hold a silicon wafer.

[0046] Next, it was evaluated whether or not the deflection of the membrane region 102 was eliminated when the mask 101 was in contact with the silicon wafer, which was the deposition substrate 108. A laser displacement meter was used to evaluate the deflection.

[0047] The mask 101 was scanned in the diameter direction with a laser displacement meter to obtain the profile of the membrane region 102. If the profile of the membrane region 102 could be fitted to the radius of curvature R of the holding surface 191 of the electrostatic chuck table 109 within a range of ±1 μm, it was deemed to have passed. In FIG. 11, a pass is indicated by a "◯". If the profile of the membrane region 102 could not be fitted, it was deemed to have failed. In FIG. 11, a fail is indicated by an "X".

[0048] As a result, in the electrostatic chuck a with a radius of curvature R exceeding 500 m, the deflection of the membrane region 102 of the mask 101 was not eliminated. On the other hand, in the electrostatic chucks b to f with a radius of curvature R of 500 m or less, it was confirmed that the deflection of the membrane region 102 of the mask 101 was eliminated. However, in the electrostatic chuck f with a radius of curvature less than 25 m, damage to the membrane region 102 occurred, which is thought to be caused by stress generated when the mask 101 is deformed into a convex shape when it is brought into contact with the silicon wafer.

[0049] Next, electrostatic chucks b, c, d, and e, each having a radius of curvature R in the range of 25 to 500 m, were used to perform deposition on the silicon wafer using the mask 101. As a result, it was confirmed that a deposited film having a desired profile was formed at a desired position. Therefore, it was found that in the deposition apparatus 100 of this embodiment, when the holding surface 191 of the electrostatic chuck table 109 has a radius of curvature R of 25 m or more and 500 m or less, a deposited film can be formed with high definition and high accuracy.

[0050] In the above-described embodiment, a silicon wafer was used as the deposition substrate 108. An SOI substrate 120 was used as the base material of the mask 101. Therefore, the mask 101 and the holding surface 191 may each have a circular outer shape. Here, the circular outer shape of the holding surface 191 means that the holding surface 191 is circular in a plan view of the holding surface 191. As shown in FIG. 2( a), the mask 101 may have a circular surface on which the openings 104 through which the deposition material passes are arranged. In this case, the holding surface 191 may be part of a cylinder whose cross section has the same arc shape along one direction. Furthermore, for example, when the mask 101 and the holding surface 191 have circular outer shapes, the holding surface 191 may be part of a sphere.

[0051] Although an example has been given in which an SOI substrate 120 is used as the base material of the mask 101, the present invention is not limited to this. For example, as described above, other materials may be used as long as the membrane region 102 of the mask 101 is made of a non-magnetic material with a volume magnetic susceptibility of 1 or less. For example, a glass substrate such as quartz or a ceramic substrate may be used as the base material of the mask 101. Furthermore, the deposition substrate 108 is not limited to a silicon wafer, and for example, a glass substrate such as quartz or a ceramic substrate may be used as the deposition substrate 108.

[0052] In the above-described embodiment and example, the magnetic layer 106 is provided on the mask 101, and a magnet is provided as the contact portion 110. However, this is not limiting. For example, the contact portion 110 may be a jig that presses one of the two main surfaces of the mask 101 opposite the main surface facing the deposition substrate 108, and the mask 101 may not have the magnetic layer 106. In this case, the jig may, for example, press the beam region 103 of the mask 101 toward the deposition substrate 108, and an opening may be provided at a position corresponding to the membrane region 102 of the mask 101 to allow the deposition material to pass through. Furthermore, the portion of the jig that presses the mask 101 may have a shape corresponding to the concave curved surface of the holding surface 191 of the electrostatic chuck table 109. For example, the portion of the jig that presses the mask 101 may have a convex curved surface toward the mask 101. As a result, the jig functioning as the abutting portion 110 can abut the abutting layer 107 of the beam region 103 of the mask 101 against the deposition substrate 108, and can apply the above-mentioned tension to the membrane region 102.

[0053] Next, a modified example of the above-described vapor deposition apparatus 100 will be described with reference to Figures 8, 9(a), and 9(b). In the configuration shown in Figures 8, 9(a), and 9(b), the mask 101 is different from that of the above-described embodiment. The following description will focus on configurations that are different from the above-described embodiment, and descriptions of configurations that may be the same will be omitted as appropriate.

[0054] 8 is a diagram illustrating a mechanism for contacting the mask 101 with the deposition substrate 108 in this embodiment. Unlike the above-described configuration in which silicon (SOI substrate 120) is used as the base material, the mask 101 in this embodiment is made of a magnetic material. Therefore, the entire surface of the mask 101 is brought into contact with the deposition substrate 108 by magnetic force from a magnet functioning as the contact portion 110. Here, in FIG. 8, similarly to FIG. 1, details such as the opening 104 of the mask 101 are omitted, but the configurations of the deposition apparatus and the mask 101 can be similar to those shown in FIG. 3.

[0055] Next, the mask 101 used in this embodiment will be described. Fig. 9(a) is a schematic plan view of the mask 101 in this embodiment. Fig. 9(b) is a schematic view showing a cross section taken along line A-A' in Fig. 9(a).

[0056] The mask 101 has a region 142 with a plurality of openings 104. During deposition, the deposition material passes from the deposition source through the openings 104 and reaches the deposition target substrate 108. The mask 101 also has a grid-like region 143 where no openings 104 are arranged. In this embodiment, the region 142 where the openings 104 are arranged and the region 143 where no openings 104 are arranged have the same thickness. As described above, in order to perform deposition with high precision and high definition, the region 142 needs to be as thin as possible. That is, in the configuration shown in FIGS. 9( a) and 9(b), the thickness of the mask 101 itself needs to be as thin as possible. For this reason, the mask 101 of this embodiment is formed in the form of a thin sheet as a whole.

[0057] When performing deposition, the edge of the mask 101 is fixed by a mask holder 113. In this embodiment, both the mask 101 and the mask holder 113 may be made of a magnetic material. Therefore, the mask 101 and the mask holder 113 may be integrally formed. Specific examples of the magnetic material used for the mask 101 and the mask holder 113 include iron, nickel, cobalt, and alloys thereof.

[0058] In the deposition apparatus 100 of this embodiment, as described above, the holding surface 191 of the electrostatic chuck table 109 and the deposition target substrate 108 conforming to the holding surface 191 are concave curved surfaces with a radius of curvature R. Therefore, the mask 101 that comes into contact with the deposition target substrate 108 necessarily has a convex shape with respect to the deposition target substrate 108. The convex shape of the mask 101 applies tension to the entire mask 101, making it less likely for the mask 101 to bend. In other words, the concave shape of the holding surface 191 of the electrostatic chuck table 109 with a radius of curvature R makes it easier for the mask 101 and the deposition target substrate 108 to come into complete contact with each other.

[0059] Here, as shown in FIGS. 10( a) and 10(b), consider a vapor deposition apparatus 100′ of a comparative example in which the holding surface 191′ of the electrostatic chuck table 109′ is flat. The mask 101 of this embodiment is in the form of a thin sheet, and therefore is prone to bending due to its own weight. Therefore, as shown in FIG. 10(a), when the magnet (contact portion 110) is in contact with or separated from the electrostatic chuck table 109, the mask 101 is bent into a concave shape relative to the deposition target substrate 108. Thereafter, when the magnet approaches (contacts) the electrostatic chuck table 109, a magnetic force is applied to the mask 101 and the mask holder 113, causing the mask 101 to contact the deposition target substrate 108.

[0060] At this time, the mask holder 113, which has the largest volume of magnetic material, receives the most magnetic force, so the edge of the mask 101 first contacts the substrate 108. Almost simultaneously with the edge of the mask 101 contacting the substrate 108, the center of the mask 101, which displaces most easily, contacts the substrate 108. Therefore, the regions of the mask 101 other than the edge and center are sequentially contacted with the substrate 108, while the positions of the edge and center are fixed. As a result, gaps are likely to occur between the substrate 108 and the mask 101, as shown in FIG. 10(b). When deposition is performed in the state shown in FIG. 10(b), the distance between the mask 101 and the substrate 108 varies, making it difficult to form a uniform film on the substrate 108 with accurate alignment.

[0061] On the other hand, in this embodiment, the holding surface 191 of the electrostatic chuck table 109 is concave with respect to the mask 101, and the distance between the mask 101 and the substrate 108 increases toward the center. Therefore, when the substrate 108 and the mask 101 come into contact with each other, the center of the mask 101 is less likely to come into contact with the substrate 108 first. In other words, the mask 101 comes into contact with the substrate 108 in order while tension is applied from the edge of the mask 101 toward the center. As a result, the mask 101 and the substrate 108 can be brought into complete contact with each other without any gaps, and a uniform film can be formed on the substrate 108 with high alignment accuracy.

[0062] Next, an example of this embodiment using a magnetic material for the mask 101 will be described. The base material of the mask 101 was invar. The mask 101 was manufactured by electroforming, and the thickness of the invar was 10 μm. Next, using the obtained deposition mask 101, deposition was attempted on a silicon wafer, which was a deposition target substrate 108. At this time, the same electrostatic chucks a to f as in the above-mentioned example were used, and a similar comparison was made. The comparison results are shown in FIG. 12.

[0063] The evaluation of the retention of the silicon wafer, which is the deposition substrate 108, was the same as in the above-described example. Next, a laser displacement meter was used to evaluate whether the mask 101 was in contact with the silicon wafer, which is the deposition substrate 108. The laser displacement meter was scanned over the entire surface of the mask 101 that was in contact with the silicon wafer, and the profile of the mask 101 was obtained. If the planar profile of the mask 101 was fitted to the radius of curvature R of the holding surface 191 of the electrostatic chuck table 109 within a range of ±1 μm, it was judged to have passed. In Figure 12, a pass is indicated by "◯". If the planar profile of the mask 101 was not fitted, it was judged to have failed. In Figure 12, a fail is indicated by "X".

[0064] As a result, when electrostatic chuck a, whose radius of curvature exceeded 500 m, was used, a portion of the mask 101 did not abut against the silicon wafer, which was the deposition substrate 108. On the other hand, when electrostatic chucks b to f, whose radius of curvature was 500 m or less, were used, it was confirmed that the entire surface of the mask 101 abutted against the silicon wafer. Furthermore, no damage to the mask 101 was observed in any of electrostatic chucks a to f. However, when deposition was performed on the silicon wafer, which was the deposition substrate 108, using electrostatic chuck f, whose radius of curvature was less than 25 m, a deviation in the deposition position was confirmed. This deviation in the deposition position was presumed to be due to plastic deformation of the mask 101 of this example caused by stress generated when the mask 101 was deformed into a convex shape. On the other hand, when deposition was performed using electrostatic chucks b, c, d, and e, whose radius of curvature R was in the range of 25 to 500 m, it was confirmed that a deposition film with a desired profile was deposited at the desired position. Therefore, in this embodiment as well, it was found that a highly precise and accurate vapor deposition film can be formed by making the holding surface 191 of the electrostatic chuck table 109 have a curvature radius R of 25 m or more and 500 m or less.

[0065] Here, a light-emitting device including pixels (light-emitting elements) including organic layers such as a light-emitting layer formed using the vapor deposition apparatus 100 and mask 101 of this embodiment will be described. Application examples of such a light-emitting device in an image forming apparatus, a display device, a photoelectric conversion device, an electronic device, a lighting device, a mobile object, and a wearable device will be described with reference to FIGS. 13(a) and 13(b) to 21(a) and 21(b). The pixels (hereinafter sometimes referred to as light-emitting elements, sub-pixels, etc.) arranged in the light-emitting device will be described as including organic light-emitting elements (OLEDs), such as organic EL elements using an organic light-emitting material. Details of each component arranged in the pixel of the light-emitting device will be first described, and then application examples will be described.

[0066] An organic light-emitting device according to one embodiment of the present invention has a first electrode, a second electrode, and an organic compound layer disposed between these electrodes. One of the first electrode and the second electrode is an anode and the other is a cathode. In the organic light-emitting device of this embodiment, the organic compound layer may be a single layer or a laminate consisting of multiple layers, as long as it has an emitting layer. If the organic compound layer is a laminate consisting of multiple layers, the organic compound layer may include, in addition to the emitting layer, a hole injection layer, a hole transport layer, an electron blocking layer, a hole / exciton blocking layer, an electron transport layer, an electron injection layer, etc. The emitting layer may also be a single layer or a laminate consisting of multiple layers. If the emitting layer is a multi-layer, a charge generation layer may be disposed between the emitting layers. The charge generation layer may be composed of a compound having a lower LUMO than the hole transport layer, and the LUMO of the charge generation layer may be lower than the HOMO of the hole transport layer. Here, the molecular orbital energy of the organic compound layer may be the molecular orbital energy of the organic compound having the largest weight ratio in the organic compound layer.

[0067] Here, the closer the HOMO and LUMO are to the vacuum level, the higher they are described as being. The LUMO of the charge generation layer being lower than the HOMO of the hole transport layer means that the LUMO of the charge generation layer is closer to the vacuum level than the HOMO of the hole transport layer.

[0068] In this specification, the HOMO and LUMO can be calculated using molecular orbital calculations. The molecular orbital calculations are performed using density functional theory (DFT) or the like, with the functional being B3LYP and the basis set being 6-31G. *It is also the case that the range of graphical designs is Gaussian09(Gaussian09). ,RevisionC.01,MJFrisch,GWTrucks,HBSchlegel,GEScus area, MARobb, JRCheeseman, G. Scalmani, V. Barone, B. Mennucci, G. Petersson, H. Nakatsuji, M. Caricato, X. Li, HPHr atchian, AFIzmaylov, J. Bloino, G. Zheng, JLSonnenberg, M. Hada, M. Ehara, K. Toyota, R. Fukuda, J. Hasegawa, M. Ish ida,T.Nakajima,Y.Honda,O.Kitao,H.Nakai,T.Vreven,JAMontgomery,Jr.,JEPeralta,F.Ogliaro,M.Bearpark,JJH eyd, E. Brothers, KNKudin, VNStaroverov, T. Keith, R. Kobayashi, J. Normand, K. Raghavachari, A. Rendell, JCBuran t,SSIyengar,J.Tomasi,M.Cossi,N.Rega,JMMillam,M.Klene,JEKnox,JBCross,V.Bakken,C.Adamo,J.Jaramillo,R. Gomperts,REStratmann,O.Yazyev,AJAustin,R.Cammi,C.Pomelli,JWOchterski,RLMartin,K.Morokuma,VGZakrzews ki,GAVoth,P.Salvador,JJDannenberg,S.Dapprich,ADDaniels,O.Farkas,JBForesman,JVOrtiz,JCioslowski,and DJFox,Gaussian,Inc.,Wallingford CT,2010.)

[0069] The HOMO and LUMO in this specification can be calculated using the ionization potential and band gap. The HOMO can be estimated by measuring the ionization potential. The ionization potential can be measured by dissolving the compound to be measured in a solvent such as toluene and using a measuring device such as an AC-3. The band gap can be measured by dissolving the compound to be measured in a solvent such as toluene and irradiating it with excitation light. The band gap can be measured by measuring the absorption edge of the excitation light. Alternatively, the compound to be measured can be deposited on a substrate such as glass and irradiated with excitation light on the deposited film. The band gap can be measured by measuring the absorption edge of the absorption spectrum where the deposited film absorbs the excitation light.

[0070] The LUMO can be calculated using the band gap and ionization potential: subtracting the ionization potential from the band gap gives the LUMO.

[0071] The LUMO can also be estimated from the reduction potential. For example, the one-electron reduction potential can be estimated using CV (cyclic volmetry) measurements. CV measurements are performed, for example, in a 0.1 M tetrabutylammonium perchlorate solution in DMF, with an Ag / Ag reference electrode. + The LUMO can be estimated by adding -4.8 eV, the difference between the reduction potential of the compound and that of ferrocene, to the reduction potential of the compound obtained.

[0072] When the organic compound according to this embodiment is included in the light-emitting layer, the light-emitting layer may be composed solely of the organic compound according to this embodiment, or may be composed of the organometallic complex according to this embodiment and other compounds. When the light-emitting layer is composed of the organometallic complex according to this embodiment and other compounds, the organic compound according to this embodiment may be used as a host or a guest in the light-emitting layer. It may also be used as an assist material that can be included in the light-emitting layer. Here, the host is the compound with the largest mass ratio among the compounds that constitute the light-emitting layer. The guest is the compound that is smaller in mass ratio than the host among the compounds that constitute the light-emitting layer and is responsible for the primary emission of light. The assist material is the compound that is smaller in mass ratio than the host among the compounds that constitute the light-emitting layer and assists the guest in emitting light. The assist material is also called a second host. The host material can also be called the first compound, and the assist material can also be called the second compound.

[0073] When the organic compound according to one embodiment of the present invention is used as a guest in the light-emitting layer, the concentration of the guest may be 0.01% by mass or more and 20% by mass or less, or even 0.1% by mass or more and 10% by mass or less, based on the total mass of the light-emitting layer. The guest is also called a dopant.

[0074] The organometallic complex according to this embodiment can be used as a constituent material of an organic compound layer other than the light-emitting layer that constitutes the organic light-emitting device of this embodiment. Specifically, it may be used as a constituent material of an electron transport layer, an electron injection layer, a hole transport layer, a hole injection layer, a hole blocking layer, etc. In this case, the emission color of the organic light-emitting device is not limited to red. More specifically, it may emit white light or an intermediate color.

[0075] If necessary, conventionally known low-molecular-weight and high-molecular-weight hole-injecting or hole-transporting compounds, host compounds, light-emitting compounds, electron-injecting or electron-transporting compounds, etc. may be used together. Examples of these compounds are listed below.

[0076] Suitable hole injection and transport materials are those with high hole mobility that facilitates hole injection from the anode and transports the injected holes to the light-emitting layer. Furthermore, materials with high glass transition temperatures are suitable to reduce film quality degradation, such as crystallization, in organic light-emitting devices. Examples of low-molecular-weight and high-molecular-weight materials with hole injection and transport properties include triarylamine derivatives, arylcarbazole derivatives, phenylenediamine derivatives, stilbene derivatives, phthalocyanine derivatives, porphyrin derivatives, poly(vinylcarbazole), poly(thiophene), and other conductive polymers. Furthermore, the above-mentioned hole injection and transport materials are also suitable for use in electron blocking layers. Specific examples of compounds that can be used as hole injection and transport materials are listed below, but are not limited to these.

[0077] [ka]

[0078] Among the hole transport materials listed above, HT16 to HT18 can reduce the driving voltage when used in a layer in contact with the anode. HT16 is widely used in organic light-emitting devices. HT2, HT3, HT4, HT5, HT6, HT10, and HT12 may be used in an organic compound layer adjacent to HT16. Furthermore, multiple materials may be used in one organic compound layer.

[0079] Examples of luminescent materials that are mainly involved in luminescence function include fused ring compounds (e.g., fluorene derivatives, naphthalene derivatives, pyrene derivatives, perylene derivatives, tetracene derivatives, anthracene derivatives, rubrene, etc.), quinacridone derivatives, coumarin derivatives, stilbene derivatives, organoaluminum complexes such as tris(8-quinolinolato)aluminum, iridium complexes, platinum complexes, rhenium complexes, copper complexes, europium complexes, ruthenium complexes, and polymer derivatives such as poly(phenylenevinylene) derivatives, poly(fluorene) derivatives, and poly(phenylene) derivatives.

[0080] Specific examples of compounds that can be used as light-emitting materials are shown below, but the present invention is not limited to these.

[0081] [ka]

[0082] [ka]

[0083] When the light-emitting material is a hydrocarbon compound, it is suitable because it can reduce the decrease in light-emitting efficiency due to exciplex formation and the decrease in color purity due to the change in the emission spectrum of the light-emitting material due to exciplex formation.

[0084] Hydrocarbon compounds are compounds composed only of carbon and hydrogen, and among the above-mentioned exemplary compounds, BD7, BD8, GD5 to GD9, and RD1 are mentioned.

[0085] When the light-emitting material is a fused polycyclic ring containing a five-membered ring, it is suitable because it has a high ionization potential, is resistant to oxidation, and forms a device with a long durability and life. Among the above-mentioned exemplary compounds, BD7, BD8, GD5 to GD9, and RD1 are examples.

[0086] Examples of the light-emitting layer host or light-emitting assist material contained in the light-emitting layer include aromatic hydrocarbon compounds or derivatives thereof, as well as carbazole derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, organoaluminum complexes such as tris(8-quinolinolato)aluminum, and organic beryllium complexes.

[0087] Specific examples of compounds that can be used as the light-emitting layer host or light-emitting assist material contained in the light-emitting layer are shown below, but the present invention is not limited to these.

[0088] [ka]

[0089] The host material may be a hydrocarbon compound. A hydrocarbon compound is a compound composed only of carbon and hydrogen, and examples of the above-mentioned compounds include EM1 to EM12 and EM16 to EM27. From the viewpoint of stability, host materials that do not have a carbon-heteroatom bond in the single bond connecting the aryl group units in their structure, such as F3 in Compound 1, are more suitable.

[0090] The electron transporting material can be arbitrarily selected from those capable of transporting electrons injected from the cathode to the light-emitting layer, and is selected taking into consideration the balance with the hole mobility of the hole transporting material, etc. Examples of materials having electron transport properties include oxadiazole derivatives, oxazole derivatives, pyrazine derivatives, triazole derivatives, triazine derivatives, quinoline derivatives, quinoxaline derivatives, phenanthroline derivatives, organoaluminum complexes, and fused ring compounds (e.g., fluorene derivatives, naphthalene derivatives, chrysene derivatives, anthracene derivatives, etc.). Furthermore, the above electron transporting materials are also suitable for use in hole-blocking layers.

[0091] Specific examples of compounds that can be used as electron transporting materials are shown below, but the present invention is not limited to these.

[0092] [ka]

[0093] The electron injection material can be selected from those that allow easy electron injection from the cathode, taking into consideration the balance with hole injection properties. Organic compounds include n-type dopants and reducing dopants. Examples include compounds containing alkali metals such as lithium fluoride, lithium complexes such as lithium quinolinol, benzimidazolidene derivatives, imidazolidene derivatives, fulvalene derivatives, and acridine derivatives.

[0094] It can also be used in combination with the above electron transporting material.

[0095] Structure of organic light-emitting element The organic light-emitting element is provided by forming an insulating layer, a first electrode, an organic compound layer, and a second electrode on a substrate. A protective layer, a color filter, a microlens, etc. may be provided on the cathode. When a color filter is provided, a planarizing layer may be provided between the protective layer and the color filter. The planarizing layer may be made of an acrylic resin, etc. The same applies when a planarizing layer is provided between the color filter and the microlens.

[0096] substrate Examples of the substrate include quartz, glass, silicon wafer, resin, and metal. The substrate may also include switching elements such as transistors and wiring patterns, with an insulating layer provided thereon. The insulating layer may be made of any material as long as it allows contact holes to be formed so that wiring patterns can be formed between the first electrode and the substrate, and insulation from unconnected wiring patterns is ensured. For example, the insulating layer may be made of a resin such as polyimide, silicon oxide, silicon nitride, or the like.

[0097] electrode A pair of electrodes can be used as the electrodes. The pair of electrodes may be an anode and a cathode. When an electric field is applied in the direction in which the organic light-emitting element emits light, the electrode with a higher potential is the anode, and the other is the cathode. It can also be said that the electrode that supplies holes to the light-emitting layer is the anode, and the electrode that supplies electrons is the cathode.

[0098] The anode may be made of a material with a high work function. For example, simple metals such as gold, platinum, silver, copper, nickel, palladium, cobalt, selenium, vanadium, and tungsten, mixtures containing these metals, alloys of these metals, and metal oxides such as tin oxide, zinc oxide, indium oxide, indium tin oxide (ITO), and zinc indium oxide can be used. Conductive polymers such as polyaniline, polypyrrole, and polythiophene can also be used as the anode.

[0099] These electrode materials may be used alone or in combination of two or more. The anode may be composed of one layer or multiple layers.

[0100] When the electrode is used as a reflective electrode, for example, chromium, aluminum, silver, titanium, tungsten, molybdenum, or alloys thereof, or laminates thereof can be used. The above materials can also function as a reflective film without functioning as an electrode. Furthermore, when a transparent electrode is used as the electrode, a transparent conductive oxide layer such as indium tin oxide (ITO) or indium zinc oxide can be used, but is not limited to these. Photolithography technology can be used to form the electrode.

[0101] On the other hand, a material with a low work function may be selected as the cathode material. Examples include simple metals such as alkali metals (e.g., lithium), alkaline earth metals (e.g., calcium), aluminum, titanium, manganese, silver, lead, and chromium, as well as mixtures containing these metals. Alternatively, alloys combining these simple metals may be used. For example, magnesium-silver, aluminum-lithium, aluminum-magnesium, silver-copper, and zinc-silver may be used. Metal oxides such as indium tin oxide (ITO) may also be used. These electrode materials may be used alone or in combination. The cathode may have a single-layer or multi-layer structure. Silver may be used as the cathode, and a silver alloy may be used to reduce silver aggregation. The alloy ratio is not important as long as silver aggregation is reduced. For example, the silver:other metal ratio may be 1:1 or 3:1.

[0102] The cathode may be a top-emission element using an oxide conductive layer such as ITO, or a bottom-emission element using a reflective electrode such as aluminum (Al), and is not particularly limited. The method for forming the cathode is not particularly limited, but using a DC or AC sputtering method, for example, can provide good coverage of the formed film and reduce the resistance of the cathode.

[0103] Pixel isolation layer The pixel separation layer may be formed of silicon oxides such as silicon nitride (SiN), silicon oxynitride (SiON), or silicon oxide (SiO) formed using a chemical vapor deposition (CVD) method. To increase the in-plane resistance of the organic compound layer, the thickness of the organic compound layer, particularly the hole transport layer, may be thinned on the sidewalls of the pixel separation layer. Specifically, the thickness of the organic compound layer on the sidewalls can be thinned by increasing the taper angle of the sidewalls of the pixel separation layer or the thickness of the pixel separation layer, thereby increasing vignetting during deposition.

[0104] On the other hand, the sidewall taper angle and film thickness of the pixel separation layer can be adjusted to the extent that voids are not formed in the protective layer formed thereon. By preventing voids from being formed in the protective layer, the occurrence of defects in the protective layer can be reduced. Since the occurrence of defects in the protective layer is reduced, deterioration of reliability such as the occurrence of dark spots and poor conduction of the second electrode can be reduced.

[0105] According to this embodiment, charge leakage to adjacent pixels can be effectively suppressed even if the taper angle of the sidewall of the pixel separation layer is not steep. As a result of this study, it was found that charge leakage can be sufficiently reduced if the taper angle is between 60 degrees and 90 degrees. The thickness of the pixel separation layer may be between 10 nm and 150 nm. Similar effects can also be achieved even if the pixel separation layer is composed only of pixel electrodes without a pixel separation layer. However, in this case, short circuits in organic light-emitting elements can be reduced by making the thickness of the pixel electrode less than half that of the organic layer or by making the edge of the pixel electrode forward tapered at less than 60 degrees.

[0106] Furthermore, even when the first electrode is a cathode and the second electrode is an anode, a wide color gamut and low-voltage operation are possible by forming an electron transport material and a charge transport layer, and an emitting layer on the charge transport layer.

[0107] organic compound layer The organic compound layer may be formed as a single layer or as multiple layers. When multiple layers are present, they may be called hole injection layers, hole transport layers, electron blocking layers, light-emitting layers, hole blocking layers, electron transport layers, electron injection layers, etc., depending on their functions. The organic compound layer is primarily composed of organic compounds but may also contain inorganic atoms or compounds. The organic compound layer may contain, for example, copper, lithium, magnesium, aluminum, iridium, platinum, molybdenum, zinc, etc. The organic compound layer may be disposed between the first electrode and the second electrode, or may be disposed in contact with the first electrode and the second electrode. When multiple light-emitting layers are present, a charge generation section may be disposed between the first and second light-emitting layers. The charge generation section may contain an organic compound having a lowest unoccupied molecular orbital energy (LUMO) of -5.0 eV or less. The same applies when a charge generation section is disposed between the second and third light-emitting layers.

[0108] protective layer A protective layer may be provided on the cathode. For example, by adhering glass with a moisture absorbent on the cathode, the penetration of moisture and other contaminants into the organic compound layer can be reduced, thereby reducing the occurrence of display defects. In another embodiment, a passivation layer such as silicon nitride may be provided on the cathode to reduce the penetration of moisture and other contaminants into the organic compound layer. For example, after forming the cathode, the cathode may be transferred to another chamber without breaking the vacuum, and a 2 μm-thick silicon nitride may be formed by CVD to serve as a protective layer. After forming the protective layer by CVD, a protective layer may be formed by atomic layer deposition (ALD). The material of the protective layer formed by ALD is not limited, and may be silicon nitride, silicon oxide, aluminum oxide, or the like. Silicon nitride may be further formed by CVD on the protective layer formed by ALD. The protective layer formed by ALD may have a thickness smaller than that of the protective layer formed by CVD. Specifically, the thickness of the protective layer formed by ALD may be 50% or less, or even 10% or less, of the protective layer formed by CVD.

[0109] Color filters A color filter may be provided on the protective layer. For example, a color filter taking into consideration the size of the organic light-emitting element may be provided on another substrate, and the substrate on which the color filter is formed may be bonded to the substrate on which the organic light-emitting element is provided. Alternatively, for example, a color filter may be patterned on the above-mentioned protective layer using photolithography technology. The color filter may be made of a polymer.

[0110] flattening layer A planarization layer may be disposed between the color filter and the protective layer. The planarization layer is provided for the purpose of reducing the unevenness of the layers below the planarization layer. It may also be called a material resin layer without limiting the purpose. The planarization layer may be composed of an organic compound, and may be a low molecular weight or a high molecular weight. In consideration of reducing the unevenness, a high molecular weight organic compound may be used for the planarization layer.

[0111] The planarization layers may be provided above and below the color filter. In this case, the constituent materials of the planarization layers may be the same or different. Specific examples of the material for the planarization layer include polyvinyl carbazole resin, polycarbonate resin, polyester resin, ABS resin, acrylic resin, polyimide resin, phenol resin, epoxy resin, silicone resin, and urea resin.

[0112] Microlenses The organic light-emitting device may have an optical component such as a microlens on its light-emitting side. The microlens may be made of acrylic resin, epoxy resin, or the like. The microlens may be intended to increase the amount of light extracted from the organic light-emitting device or to control the direction of the extracted light. The microlens may have a hemispherical shape. When the microlens has a hemispherical shape, among the tangents to the hemisphere, there is a tangent that is parallel to the insulating layer, and the point of contact between this tangent and the hemisphere is the vertex of the microlens. The vertex of the microlens can be determined in the same way in any cross-sectional view. In other words, among the tangents to the semicircle of the microlens in the cross-sectional view, there is a tangent that is parallel to the insulating layer, and the point of contact between this tangent and the semicircle is the vertex of the microlens.

[0113] It is also possible to define the midpoint of a microlens. In the cross section of the microlens, a line segment is imagined from the point where an arc shape ends to the point where another arc shape ends, and the midpoint of this line segment can be called the midpoint of the microlens. The cross section for determining the vertex and midpoint may be a cross section perpendicular to the insulating layer.

[0114] The microlens has a first surface having a convex portion and a second surface opposite the first surface. The second surface can be disposed closer to the functional layer (light-emitting layer) than the first surface. To achieve this configuration, it is necessary to form the microlens on the light-emitting device. If the functional layer is an organic layer, high-temperature processes can be avoided in the microlens manufacturing process. Furthermore, if the second surface is disposed closer to the functional layer than the first surface, the glass transition temperatures of the organic compounds constituting the organic layer may all be 100°C or higher, and are preferably, for example, 130°C or higher.

[0115] Counter substrate An opposing substrate may be disposed on the planarization layer. The opposing substrate is called an opposing substrate because it is provided at a position corresponding to the aforementioned substrate. The opposing substrate may be made of the same material as the aforementioned substrate. When the aforementioned substrate is defined as a first substrate, the opposing substrate may be a second substrate.

[0116] organic layer The organic compound layers (hole injection layer, hole transport layer, electron blocking layer, light-emitting layer, hole blocking layer, electron transport layer, electron injection layer, etc.) constituting the organic light-emitting element according to an embodiment of the present disclosure may be formed by the following method.

[0117] The organic compound layer constituting the organic light-emitting device according to the embodiment of the present disclosure can be formed by dry processes such as vacuum deposition, ionization deposition, sputtering, plasma, etc. Alternatively to the dry process, a wet process can be used in which the compound is dissolved in an appropriate solvent and a layer is formed by a known coating method (e.g., spin coating, dipping, casting, LB method, inkjet method, etc.).

[0118] Here, when a layer is formed by a vacuum deposition method or a solution coating method, crystallization is unlikely to occur and the layer has excellent stability over time. When a film is formed by a coating method, the film can be formed by combining the film with an appropriate binder resin.

[0119] Examples of the binder resin include, but are not limited to, polyvinylcarbazole resin, polycarbonate resin, polyester resin, ABS resin, acrylic resin, polyimide resin, phenol resin, epoxy resin, silicone resin, and urea resin.

[0120] These binder resins may be used singly or in combination as homopolymers or copolymers, and may further contain known additives such as plasticizers, antioxidants, and ultraviolet absorbers, as needed.

[0121] Pixel circuit The light-emitting device may have a pixel circuit connected to the light-emitting element. The pixel circuit may be an active matrix type that controls the emission of the first light-emitting element and the second light-emitting element independently. The active matrix type circuit may be voltage-programmed or current-programmed. The drive circuit has a pixel circuit for each pixel. The pixel circuit may have a light-emitting element, a transistor that controls the emission brightness of the light-emitting element, a transistor that controls the emission timing, a capacitor that holds the gate voltage of the transistor that controls the emission brightness, and a transistor for connecting to GND without going through the light-emitting element.

[0122] The light-emitting device has a display region and a peripheral region arranged around the display region. The display region has pixel circuits, and the peripheral region has a display control circuit. The mobility of a transistor constituting the pixel circuit may be lower than the mobility of a transistor constituting the display control circuit.

[0123] The slope of the current-voltage characteristics of the transistors that make up the pixel circuit may be smaller than the slope of the current-voltage characteristics of the transistors that make up the display control circuit. The slope of the current-voltage characteristics can be measured using the so-called Vg-Ig characteristics.

[0124] The transistors that make up the pixel circuit are transistors connected to the light-emitting elements, such as the first light-emitting element.

[0125] pixel An organic light emitting device has a plurality of pixels, each of which has sub-pixels that emit different colors, for example, RGB colors.

[0126] A pixel has an area called a pixel aperture that emits light. The pixel aperture may be 15 μm or less, or 5 μm or more. More specifically, it may be 11 μm, 9.5 μm, 7.4 μm, 6.4 μm, etc.

[0127] The spacing between the subpixels may be 10 μm or less, and specifically may be 8 μm, 7.4 μm, or 6.4 μm.

[0128] The pixels may be arranged in a known manner in a plan view. For example, they may be in a stripe arrangement, a delta arrangement, a pentile arrangement, or a Bayer arrangement. The shape of the subpixels in a plan view may be any known shape. For example, they may be rectangular, quadrilaterals such as diamonds, or hexagons. Of course, a shape that is close to a rectangle, rather than an exact shape, is included in the rectangle. The shape of the subpixels and the pixel arrangement may be used in combination.

[0129] Uses of the organic light-emitting device according to embodiments of the present disclosure The organic light-emitting device according to the embodiment of the present disclosure can be used as a component of a display device or a lighting device, and can also be used as an exposure light source for an electrophotographic image forming device, a backlight for a liquid crystal display device, or a light-emitting device having a white light source and a color filter.

[0130] The display device may be an image information processing device that has an image input unit that inputs image information from an area CCD, linear CCD, memory card, etc., has an information processing unit that processes the input information, and displays the input image on the display unit.

[0131] The display unit of the imaging device or inkjet printer may have a touch panel function. The driving method of this touch panel function may be an infrared method, a capacitance method, a resistive film method, or an electromagnetic induction method, and is not particularly limited. The display device may also be used in the display unit of a multifunction printer.

[0132] Next, further explanation will be given with reference to the drawings. Fig. 13(a) shows an example of a pixel arranged in a light-emitting device. The pixel has sub-pixels 810 (light-emitting elements). The sub-pixels are divided into 810R, 810G, and 810B based on their light emission. The emitted colors may be distinguished by the wavelength of light emitted from the light-emitting layer, or the light emitted from the sub-pixels may be selectively transmitted or color-converted using a color filter or the like. Each sub-pixel has a reflective electrode 802 as a first electrode on an interlayer insulating layer 801, an insulating layer 803 covering the edge of the reflective electrode 802, an organic compound layer 804 covering the first electrode and the insulating layer, a transparent electrode 805 as a second electrode, a protective layer 806, and a color filter 807.

[0133] A transistor and a capacitor may be disposed below or inside the interlayer insulating layer 801. The transistor and the first electrode may be electrically connected via a contact hole (not shown) or the like.

[0134] The insulating layer 803 may also be called a bank or a pixel separation film. The insulating layer 803 covers the edges of the first electrodes and is disposed to surround the first electrodes. The portions of the first electrodes not covered by the insulating layer 803 come into contact with the organic compound layer 804 and become light-emitting regions.

[0135] The organic compound layer 804 includes a hole injection layer 841 , a hole transport layer 842 , a first light-emitting layer 843 , a second light-emitting layer 844 , and an electron transport layer 845 .

[0136] The second electrode may be a transparent electrode, a reflective electrode, or a semi-transparent electrode.

[0137] The protective layer 806 reduces the penetration of moisture into the organic compound layer. Although the protective layer is illustrated as a single layer, it may be a multi-layer structure. Each layer may be an inorganic compound layer and an organic compound layer.

[0138] The color filters 807 are divided into 807R, 807G, and 807B depending on their colors. The color filters may be formed on a planarization film (not shown). A resin protective layer (not shown) may be disposed on the color filters. The color filters may be formed on a protective layer 806. The color filters may be provided on an opposing substrate such as a glass substrate and then bonded thereto.

[0139] The display device 800 (light-emitting device) in FIG. 13(b) includes an organic light-emitting element 826 and a TFT 818 as an example of a transistor. A substrate 811 made of glass, silicon, or the like is provided with an insulating layer 812 on top of it. An active element such as the TFT 818 is disposed on the insulating layer, and a gate electrode 813, a gate insulating film 814, and a semiconductor layer 815 of the active element are disposed on top of the insulating layer. The TFT 818 also includes the semiconductor layer 815, a drain electrode 816, and a source electrode 817. An insulating film 819 is provided on top of the TFT 818. An anode 821 constituting the organic light-emitting element 826 and the source electrode 817 are connected via a contact hole 820 provided in the insulating film.

[0140] The electrical connection between the electrodes (anode, cathode) included in the organic light-emitting element 826 and the electrodes (source electrode, drain electrode) included in the TFT is not limited to the embodiment shown in Figure 13(b). In other words, it is sufficient that either the anode or the cathode is electrically connected to either the TFT source electrode or the drain electrode. TFT stands for thin film transistor.

[0141] 13(b), the organic compound layer is illustrated as a single layer, but the organic compound layer 822 may be a multi-layer structure. A first protective layer 824 and a second protective layer 825 are provided on the cathode 823 to reduce deterioration of the organic light-emitting element.

[0142] In the display device 800 of FIG. 13(b), a transistor is used as the switching element, but other switching elements may be used instead.

[0143] Also, the transistor used in the display device 800 of FIG. 13(b) is not limited to a transistor using a single crystal silicon wafer, and may also be a thin film transistor having an active layer on an insulating surface of a substrate. Examples of the active layer include non-single crystal silicon such as single crystal silicon, amorphous silicon, and microcrystalline silicon, and non-single crystal oxide semiconductors such as indium zinc oxide and indium gallium zinc oxide. Note that a thin film transistor is also called a TFT element.

[0144] The transistor included in the display device 800 of FIG. 13(b) may be formed in a substrate such as a silicon substrate. Here, forming in the substrate means manufacturing a transistor by processing the substrate itself such as a silicon substrate. That is, having a transistor in the substrate can also be regarded as the substrate and the transistor being integrally formed.

[0145] The organic light emitting element according to the present embodiment has its emission luminance controlled by a TFT, which is an example of a switching element, and an image can be displayed according to the respective emission luminance by providing a plurality of organic light emitting elements in a plane. Here, the switching element according to the present embodiment is not limited to a TFT, and may be a transistor formed of low temperature polysilicon or an active matrix driver formed on a substrate such as a silicon substrate. Forming on the substrate can also mean forming in the substrate. Whether to provide a transistor in the substrate or use a TFT is selected according to the size of the display portion. For example, if the size is about 0.5 inches, an organic light emitting element may be provided on a silicon substrate.

[0146] 14(a) to 14(c) are schematic diagrams showing an example of an image forming apparatus using a light emitting device. An image forming apparatus 926 shown in Fig. 14(a) includes a photosensitive member 927, an exposure light source 928, a developing unit 931, a charging unit 930, a transfer unit 932, a transport unit 933 (a transport roller in the configuration of Fig. 14(a)), and a fixing unit 935.

[0147] Light 929 is emitted from an exposure light source 928, and an electrostatic latent image is formed on the surface of the photoconductor 927. A light emitting device can be used as this exposure light source 928. A developing unit 931 contains toner or the like as a developer and can function as a developing device that applies the developer to the exposed photoconductor 927. A charging unit 930 charges the photoconductor 927. A transfer unit 932 transfers the developed image to a recording medium 934. A transport unit 933 transports the recording medium 934. The recording medium 934 can be, for example, paper or film. A fixing unit 935 fixes the image formed on the recording medium.

[0148] 14(b) and 14(c) are schematic diagrams showing an exposure light source 928 in which a plurality of light-emitting units 936 are arranged along the longitudinal direction of a long substrate. A light-emitting device can be applied to the light-emitting units 936. That is, a plurality of pixels (light-emitting elements) are arranged along the longitudinal direction of the substrate. A direction 937 is parallel to the axis of the photosensitive member 927. This column direction is the same as the axial direction of the photosensitive member 927 when it rotates. This direction 937 can also be called the long axis direction of the photosensitive member 927.

[0149] FIG. 14(b) shows a configuration in which the light-emitting units 936 are arranged along the longitudinal direction of the photoconductor 927. FIG. 14(c) shows a modified configuration of the arrangement of the light-emitting units 936 shown in FIG. 14(b), in which the light-emitting units 936 are arranged alternately in the column direction in the first and second columns. The light-emitting units 936 are arranged at different positions in the row direction in the first and second columns. In the first column, multiple light-emitting units 936 are arranged at intervals, and in the second column, light-emitting units 936 are arranged at positions corresponding to the gaps between the light-emitting units 936 in the first column. Multiple light-emitting units 936 are also arranged at intervals in the row direction. The arrangement of the light-emitting units 936 shown in FIG. 14(c) can be described as, for example, a grid-like arrangement, a houndstooth arrangement, or a checkerboard pattern.

[0150] FIG. 15 is a schematic diagram illustrating an example of a display device using a light-emitting device. The display device 1000 may include a touch panel 1003, a display panel 1005, a frame 1006, a circuit board 1007, and a battery 1008 between an upper cover 1001 and a lower cover 1009. Flexible printed circuits FPCs 1002 and 1004 are connected to the touch panel 1003 and the display panel 1005. A control circuit including a logic circuit configured with transistors and the like is disposed on the circuit board 1007. The battery 1008 may not be disposed if the display device 1000 is not a portable device, and even if it is a portable device, it does not need to be disposed in this position. A light-emitting device can be applied to the display panel 1005. Pixels (light-emitting elements) disposed in the light-emitting device functioning as the display panel 1005 are connected to and operate with a control circuit disposed on the circuit board 1007.

[0151] The display device 1000 shown in FIG. 15 may be used as a display unit of a photoelectric conversion device (which may also be called an imaging device) that has an optical unit with multiple lenses and an imaging element that receives light that has passed through the optical unit and photoelectrically converts it into an electrical signal. The photoelectric conversion device may have a display unit that displays information acquired by the imaging element. The display unit may be a display unit exposed to the outside of the photoelectric conversion device or a display unit located within a viewfinder. The photoelectric conversion device may be a digital camera or a digital video camera.

[0152] FIG. 16 is a schematic diagram illustrating an example of a photoelectric conversion device using the light-emitting device of this embodiment. The photoelectric conversion device 1100 may include a viewfinder 1101, a rear display 1102, an operation unit 1103, and a housing 1104. The photoelectric conversion device 1100 may also be called an imaging device. A light-emitting device can be applied to the viewfinder 1101 or the rear display 1102, which are display units. In this case, the light-emitting device may display not only an image to be captured, but also environmental information, imaging instructions, and the like. The environmental information may include the intensity of external light, the direction of external light, the moving speed of the subject, the possibility that the subject will be blocked by an obstruction, and the like.

[0153] Since the timing suitable for capturing an image is often very short, it is better to display information as soon as possible. Therefore, a light-emitting device in which pixels (light-emitting elements) including light-emitting elements using organic light-emitting materials such as organic EL elements are arranged may be used in the viewfinder 1101 and the rear display 1102. This is because organic light-emitting materials have a fast response speed. Light-emitting devices using organic light-emitting materials are more suitable than liquid crystal display devices for these devices, which require high display speed.

[0154] The photoelectric conversion device 1100 has an optical section (not shown). The optical section has multiple lenses, which form an image on a photoelectric conversion element (not shown) housed in a housing 1104 that receives light that has passed through the optical section. The focus of the multiple lenses can be adjusted by adjusting their relative positions. This operation can also be performed automatically.

[0155] The light-emitting device may be applied to a display unit of an electronic device. In this case, the light-emitting device may have both a display function and an operation function. Examples of the portable terminal include a mobile phone such as a smartphone, a tablet, and a head-mounted display.

[0156] FIG. 17 is a schematic diagram showing an example of an electronic device using the light-emitting device of this embodiment. The electronic device 1200 has a display unit 1201, an operation unit 1202, and a housing 1203. The housing 1203 may have a circuit, a printed circuit board having the circuit, a battery, and a communication unit. The operation unit 1202 may be a button or a touch panel type reaction unit. The operation unit 1202 may be a biometric recognition unit that recognizes a fingerprint to perform unlocking, etc. A portable device having a communication unit can also be called a communication device. A light-emitting device can be applied to the display unit 1201.

[0157] 18(a) and 18(b) are schematic diagrams illustrating an example of a display device using a light-emitting device. FIG. 18(a) illustrates a display device such as a television monitor or a PC monitor. The display device 1300 has a frame 1301 and a display unit 1302. A light-emitting device can be applied to the display unit 1302. The display device 1300 may have a base 1303 that supports the frame 1301 and the display unit 1302. The base 1303 is not limited to the form shown in FIG. 18(a). For example, the bottom edge of the frame 1301 may also serve as the base 1303. The frame 1301 and the display unit 1302 may be curved. The radius of curvature may be 5000 mm or more and 6000 mm or less.

[0158] FIG. 18(b) is a schematic diagram showing another example of a display device using a light-emitting device. The display device 1310 in FIG. 18(b) is configured to be bendable and is a so-called foldable display device. The display device 1310 has a first display unit 1311, a second display unit 1312, a housing 1313, and a bending point 1314. A light-emitting device can be applied to the first display unit 1311 and the second display unit 1312. The first display unit 1311 and the second display unit 1312 may be a single display unit without any joints. The first display unit 1311 and the second display unit 1312 can be separated by the bending point. The first display unit 1311 and the second display unit 1312 may display different images, or the first display unit and the second display unit may display a single image.

[0159] FIG. 19 is a schematic diagram showing an example of a lighting device using a light-emitting device. The lighting device 1400 may include a housing 1401, a light source 1402, a circuit board 1403, an optical film 1404, and a light diffusion unit 1405. A light-emitting device can be applied to the light source 1402. The optical film 1404 may be a filter that improves the color rendering of the light source. The light diffusion unit 1405 can effectively diffuse light from the light source, such as for lighting, and deliver the light over a wide area. If necessary, a cover may be provided on the outermost part. The lighting device 1400 may include both the optical film 1404 and the light diffusion unit 1405, or only one of them.

[0160] The lighting device 1400 is, for example, a device that illuminates a room. The lighting device 1400 may emit white, daylight white, or any other color from blue to red. It may have a dimming circuit that adjusts the light intensity. The lighting device 1400 may have a power supply circuit connected to a light-emitting device that functions as the light source 1402. The power supply circuit is a circuit that converts AC voltage into DC voltage. White has a color temperature of 4200K, and daylight white has a color temperature of 5000K. The lighting device 1400 may also have a color filter. The lighting device 1400 may also have a heat sink. The heat sink dissipates heat from within the device to the outside, and examples of the heat sink include metal with a high specific heat, liquid silicon, etc.

[0161] FIG. 20 is a schematic diagram of an automobile having a tail lamp, which is an example of a vehicle lamp using a light-emitting device. The automobile 1500 has a tail lamp 1501, and may be configured to turn on the tail lamp 1501 when braking or the like is performed. The light-emitting device may be used as a head lamp as a vehicle lamp. An automobile is an example of a mobile body, and the mobile body may be a ship, a drone, an aircraft, a railroad vehicle, an industrial robot, or the like. The mobile body may have a body and a lamp attached thereto. The lamp may indicate the current location of the body.

[0162] A light emitting device can be applied to tail lamp 1501. Tail lamp 1501 may have a protective member that protects the light emitting device functioning as tail lamp 1501. The protective member may be made of any material as long as it has a certain degree of strength and is transparent, but may be made of polycarbonate or the like. The protective member may also be made by mixing polycarbonate with a furandicarboxylic acid derivative, an acrylonitrile derivative, or the like.

[0163] The automobile 1500 may have a body 1503 and a window 1502 attached to the body. The window may be a window for checking the front and rear of the automobile, or may be a transparent display such as a head-up display. A light-emitting device may be used in the transparent display. In this case, the constituent materials of the electrodes and the like of the light-emitting device are made of transparent materials.

[0164] 21(a) and 21(b), further application examples of the light-emitting device will be described. The light-emitting device can be applied to systems that can be worn as wearable devices, such as smart glasses, head-mounted displays (HMDs), and smart contact lenses. An image capturing and displaying device used in such application examples has an image capturing device capable of photoelectrically converting visible light and a light-emitting device capable of emitting visible light.

[0165] 21(a) illustrates glasses 1600 (smart glasses) according to one application example. An imaging device 1602 such as a CMOS sensor or SPAD is provided on the front side of a lens 1601 of the glasses 1600. In addition, a light emitting device is provided on the back side of the lens 1601.

[0166] The glasses 1600 further include a control device 1603. The control device 1603 functions as a power source that supplies power to the image capture device 1602 and the light emitting device. The control device 1603 also controls the operations of the image capture device 1602 and the light emitting device. The lens 1601 is formed with an optical system for focusing light onto the image capture device 1602.

[0167] FIG. 21(b) illustrates glasses 1610 (smart glasses) according to one application example. The glasses 1610 include a control device 1612, which is equipped with an imaging device and a light-emitting device equivalent to the imaging device 1602. A lens 1611 includes an optical system for projecting light emitted from the imaging device and the light-emitting device within the control device 1612, and an image is projected onto the lens 1611. The control device 1612 functions as a power source for supplying power to the imaging device and the light-emitting device and controls the operation of the imaging device and the light-emitting device. The control device 1612 may also include a gaze detection unit for detecting the gaze of the wearer. Infrared light may be used for gaze detection. The infrared light-emitting unit emits infrared light toward the eyeball of a user gazing at a displayed image. An imaging unit with a light-receiving element detects the reflected light of the emitted infrared light from the eyeball, thereby obtaining an image of the eyeball. A reduction unit for reducing light from the infrared light-emitting unit to the display unit in a planar view reduces degradation of image quality.

[0168] The gaze of the user relative to the displayed image is detected from an image of the eyeball obtained by capturing infrared light. Any known method can be used for gaze detection using the image of the eyeball. As an example, a gaze detection method based on the Purkinje image formed by reflection of irradiated light on the cornea can be used.

[0169] More specifically, gaze detection processing is performed based on the pupil-corneal reflex method, which calculates a gaze vector representing the direction (rotation angle) of the eyeball based on the pupil image and Purkinje image included in the captured image of the eyeball, thereby detecting the user's gaze.

[0170] The light-emitting device may have an imaging device with a light-receiving element and control the display image based on user line-of-sight information from the imaging device. Specifically, the light-emitting device determines a first field of view area where the user gazes and a second field of view area other than the first field of view area based on the line-of-sight information. The first field of view area and the second field of view area may be determined by a control device of the light-emitting device, or may be determined by an external control device and received. In the display area of ​​the light-emitting device, the display resolution of the first field of view area may be controlled to be higher than the display resolution of the second field of view area. In other words, the resolution of the second field of view area may be lower than that of the first field of view area.

[0171] The display area includes a first display area and a second display area different from the first display area, and a high-priority area is determined from the first display area and the second display area based on line-of-sight information. The first display area and the second display area may be determined by a control device of the light-emitting device, or may be determined by an external control device and received. The resolution of the high-priority area may be controlled to be higher than the resolution of areas other than the high-priority area. In other words, the resolution of an area with a relatively low priority may be lowered.

[0172] Note that AI may be used to determine the first field of view area and areas with high priority. The AI ​​may be a model configured to estimate the angle of gaze and the distance to an object in the line of sight from the image of the eyeball, using as training data an image of the eyeball and the direction in which the eyeball in the image was actually looking. The AI ​​program may be included in the light-emitting device, the imaging device, or an external device. If included in an external device, it is transmitted to the light-emitting device via communication.

[0173] When display control is performed based on visual recognition detection, the smart glasses can be applied to smart glasses that further include an imaging device for capturing images of the outside world. The smart glasses can display captured outside information in real time.

[0174] The disclosure of the present specification includes the following vapor deposition apparatus and method for manufacturing a light-emitting device.

[0175] (Item 1) an electrostatic chuck table having a holding surface for holding a substrate to be deposited; a contact portion for contacting the mask with the substrate; The vapor deposition apparatus is characterized in that the holding surface has a curved surface with a concave shape that is recessed in the center.

[0176] (Item 2) 2. The vapor deposition device according to item 1, wherein the holding surface has an arc shape in a cross section taken along a direction intersecting the holding surface.

[0177] (Item 3) 3. The deposition apparatus according to item 1 or 2, wherein the holding surface is a part of a spherical surface.

[0178] (Item 4) 4. The vapor deposition apparatus according to any one of items 1 to 3, wherein the holding surface has a radius of curvature of 25 m or more and 500 m or less.

[0179] (Item 5) 5. The vapor deposition device according to any one of items 1 to 4, wherein the holding surface is circular in a plan view of the holding surface.

[0180] (Item 6) 6. The deposition apparatus according to any one of items 1 to 5, wherein the force per unit area of ​​the electrostatic chuck table that attracts the deposition target substrate is greater at the center of the holding surface than at the outer edge.

[0181] (Item 7) 7. The vapor deposition device according to any one of items 1 to 6, wherein the mask includes a plurality of first regions having a first thickness and having a plurality of openings arranged therein, and a second region having a second thickness greater than the first thickness and arranged between adjacent first regions among the plurality of first regions.

[0182] (Item 8) 8. The vapor deposition device according to item 7, wherein the second regions are arranged in a grid pattern.

[0183] (Item 9) the mask has a magnetic layer disposed in the second region; Item 9. The deposition apparatus according to item 7 or 8, wherein the contact portion has a magnet that attracts the magnetic layer in a direction toward the holding surface.

[0184] (Item 10) the mask includes an abutment layer disposed so as to cover the magnetic layer; Item 10. The deposition apparatus according to item 9, wherein the contact layer has a lower hardness than the magnetic layer.

[0185] (Item 11) 11. The vapor deposition device according to any one of items 7 to 10, wherein the first region is made of a material having a volume magnetic susceptibility of 1 or less.

[0186] (Item 12) 12. The deposition apparatus according to any one of items 1 to 11, wherein the mask contains silicon as a base material.

[0187] (Item 13) Item 13. The deposition apparatus according to item 12, wherein the mask includes a stress adjustment layer for applying tensile stress to the substrate.

[0188] (Item 14) the mask is made of a magnetic material; 9. The vapor deposition device according to any one of items 1 to 8, wherein the contact portion has a magnet that attracts the mask in a direction toward the holding surface.

[0189] (Item 15) 15. The vapor deposition apparatus according to any one of items 1 to 14, wherein the mask has a circular outer shape.

[0190] (Item 16) A method for manufacturing a light-emitting device in which a plurality of pixels, each of which has an organic layer including a light-emitting layer, are arranged on a substrate, comprising: holding the substrate on a holding surface of an electrostatic chuck table; a step of placing a mask opposite the substrate and bringing the mask into contact with the substrate; depositing the organic layer onto the substrate through the mask; Including, The manufacturing method is characterized in that the holding surface has a curved surface with a concave shape that is recessed in the center.

[0191] The invention is not limited to the above-described embodiments, and various changes and modifications can be made without departing from the spirit and scope of the invention. Accordingly, the following claims are appended to apprise the public of the scope of the invention. [Explanation of symbols]

[0192] 100: deposition device, 101: mask, 108: deposition substrate, 109: electrostatic chuck table, 110: contact portion, 191: holding surface

Claims

1. an electrostatic chuck table having a holding surface for holding a substrate to be deposited; a contact portion for contacting the mask with the substrate; The vapor deposition apparatus is characterized in that the holding surface has a curved surface with a concave shape that is recessed in the center.

2. The vapor deposition device according to claim 1 , wherein the holding surface has an arc shape in a cross section taken along a direction intersecting the holding surface.

3. The vapor deposition apparatus according to claim 1 , wherein the holding surface is a part of a spherical surface.

4. 2. The deposition apparatus according to claim 1, wherein the holding surface has a radius of curvature of 25 m or more and 500 m or less.

5. The vapor deposition device according to claim 1 , wherein the holding surface has a circular shape in a plan view of the holding surface.

6. 2. The deposition apparatus according to claim 1, wherein the force per unit area of ​​the electrostatic chuck table that attracts the deposition target substrate is greater at the center of the holding surface than at the outer edge.

7. 2. The deposition apparatus according to claim 1, wherein the mask includes a plurality of first regions having a first thickness and having a plurality of openings arranged therein, and a second region having a second thickness greater than the first thickness and arranged between adjacent first regions among the plurality of first regions.

8. The vapor deposition apparatus according to claim 7 , wherein the second regions are arranged in a lattice pattern.

9. the mask has a magnetic layer disposed in the second region; The deposition apparatus according to claim 7 , wherein the contact portion has a magnet that attracts the magnetic layer in a direction toward the holding surface.

10. the mask includes an abutment layer disposed so as to cover the magnetic layer; The deposition apparatus according to claim 9 , wherein the contact layer has a hardness lower than that of the magnetic layer.

11. 8. The deposition apparatus according to claim 7, wherein the first region is made of a material having a volume magnetic susceptibility of 1 or less.

12. The deposition apparatus according to claim 1 , wherein the mask includes silicon as a base material.

13. The deposition apparatus according to claim 12 , wherein the mask includes a stress adjustment layer for applying tensile stress to the substrate.

14. the mask is made of a magnetic material; The deposition apparatus according to claim 1 , wherein the contact portion has a magnet that attracts the mask in a direction toward the holding surface.

15. 2. The deposition apparatus according to claim 1, wherein the mask has a circular outer shape.

16. A method for manufacturing a light-emitting device in which a plurality of pixels, each of which has an organic layer including a light-emitting layer, are arranged on a substrate, comprising: holding the substrate on a holding surface of an electrostatic chuck table; a step of placing a mask opposite the substrate and bringing the mask into contact with the substrate; depositing the organic layer onto the substrate through the mask; Including, The manufacturing method is characterized in that the holding surface has a curved surface with a concave shape that is recessed in the center.

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