Semiconductor substrate and method for manufacturing radiation detection panel

Abstract

To provide a semiconductor substrate that has excellent quality and high manufacturing yield, and a method for manufacturing a radiation detection panel.SOLUTION: A semiconductor substrate comprises a base material 2a, a plurality of scan lines G, a plurality of signal lines U, a plurality of pixels PX, a plurality of first inner pads (2d2), a plurality of second inner pads (2d1), peripheral wiring WL, a plurality of first bidirectional diodes BD1, a plurality of second bidirectional diodes BD2, and a voltage adjustment pad cd. Each of the first bidirectional diodes BD1 is electrically connected between corresponding one or more signal lines U and the peripheral wiring WL. Each of the second bidirectional diodes BD2 is electrically connected between corresponding one or more scan lines G and the peripheral wiring WL. The voltage adjustment pad cd is electrically connected to the peripheral wiring WL.SELECTED DRAWING: Figure 8

Description

[Technical Field]

[0001] SUMMARY OF THE INVENTION An embodiment of the present invention relates to a method for manufacturing a semiconductor substrate and a radiation detection panel. [Background technology]

[0002] Known examples of radiation detectors include X-ray detectors (flat panel X-ray detectors). Radiation detectors are classified into direct conversion type radiation detectors and indirect conversion type radiation detectors depending on the method used to convert radiation into an electrical signal. Direct conversion type radiation detectors convert the electric charge generated in a semiconductor by the energy provided by the radiation into an electrical signal by collecting it from electrodes provided at the edge of the semiconductor. Indirect conversion type radiation detectors convert incident radiation into light using a scintillator layer, and then convert the light from the scintillator layer into an electric charge within the semiconductor.

[0003] An indirect conversion type radiation detector includes, for example, a conversion substrate having a photoelectric conversion unit that converts light into signal charges and a thin-film transistor that switches between accumulating and releasing the signal charges, and a scintillator layer that is provided on the conversion substrate and converts radiation into fluorescence. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Laid-Open No. 2014-165777 Summary of the Invention [Problem to be solved by the invention]

[0005] The present embodiment provides a method for manufacturing a semiconductor substrate and a radiation detection panel that are excellent in quality and have a high manufacturing yield. [Means for solving the problem]

[0006] The semiconductor substrate according to one embodiment includes: a substrate positioned in an effective area, a frame-shaped first ineffective area surrounding the effective area, and a frame-shaped second ineffective area surrounding the first ineffective area; a plurality of scanning lines disposed above the substrate and extending through the active area; a plurality of signal lines provided above the substrate, extending through the effective area and intersecting the plurality of scanning lines; a plurality of pixels provided above the substrate and positioned in the effective region, each of the pixels having a switching element electrically connected to a corresponding one of the plurality of scanning lines and a corresponding one of the plurality of signal lines, and a pixel electrode electrically connected to the switching element; a plurality of first internal pads provided above the base, located in the first non-effective region, and electrically connected to the plurality of signal lines in a one-to-one relationship; a plurality of second internal pads provided above the base, located in the first non-effective area, and electrically connected to the plurality of scan lines in a one-to-one relationship; peripheral wiring provided above the base material, positioned in the second non-effective region, and electrically connected to the plurality of signal lines and the plurality of scanning lines; a plurality of first bidirectional diodes provided above the base material and positioned in the second non-effective region, each of the first bidirectional diodes being electrically connected between one or more corresponding signal lines among the plurality of signal lines and the peripheral wiring; a plurality of second bidirectional diodes provided above the base material and positioned in the second non-effective region, each of the second bidirectional diodes being electrically connected between one or more corresponding scanning lines among the plurality of scanning lines and the peripheral wiring; a voltage adjustment pad provided above the base material, positioned in the second non-effective area, and electrically connected to the peripheral wiring;

[0007] Further, a method for manufacturing a radiation detection panel according to an embodiment includes the steps of: a substrate located in an effective area, a frame-shaped first non-effective area surrounding the effective area, and a frame-shaped second non-effective area surrounding the first non-effective area; a plurality of scanning lines provided above the substrate and extending through the effective area; a plurality of signal lines provided above the substrate and extending through the effective area and intersecting the plurality of scanning lines; a plurality of pixels provided above the substrate and located in the effective area, each pixel having a switching element electrically connected to a corresponding one of the plurality of scanning lines and a corresponding one of the plurality of signal lines, and a pixel electrode electrically connected to the switching element; a plurality of first internal pads provided above the substrate, located in the first non-effective area, and electrically connected to the plurality of signal lines in a one-to-one relationship; a plurality of second internal pads arranged in the second non-effective area, peripheral wiring arranged above the base, located in the second non-effective area, and electrically connected to the plurality of signal lines and the plurality of scanning lines; a plurality of first bidirectional diodes arranged above the base, located in the second non-effective area, each of the first bidirectional diodes electrically connected between a corresponding one or more of the plurality of signal lines and the peripheral wiring; a plurality of second bidirectional diodes arranged above the base, located in the second non-effective area, each of the second bidirectional diodes electrically connected between a corresponding one or more of the plurality of scanning lines and the peripheral wiring; and a voltage adjustment pad arranged above the base, located in the second non-effective area, and electrically connected to the peripheral wiring; During the first read period, adjusting a voltage value applied to the voltage adjustment pad to bring the plurality of first bidirectional diodes and the plurality of second bidirectional diodes into a conductive state; sequentially applying a first scan signal to h scan lines among the plurality of scan lines via h second internal pads among the plurality of second internal pads; reading out a plurality of first data signals from the plurality of first internal pads each time the first scan signal is applied to each of the h scan lines; A state of the semiconductor substrate is determined based on the plurality of first data signals.

[0008] Further, a method for manufacturing a radiation detection panel according to an embodiment includes the steps of: a substrate located in an effective area, a frame-shaped first non-effective area surrounding the effective area, and a frame-shaped second non-effective area surrounding the first non-effective area; a plurality of scanning lines provided above the substrate and extending through the effective area; a plurality of signal lines provided above the substrate and extending through the effective area and intersecting the plurality of scanning lines; a plurality of pixels provided above the substrate and located in the effective area, each pixel having a switching element electrically connected to a corresponding one of the plurality of scanning lines and a corresponding one of the plurality of signal lines, and a pixel electrode electrically connected to the switching element; a plurality of first internal pads provided above the substrate, located in the first non-effective area, and electrically connected to the plurality of signal lines in a one-to-one relationship; a plurality of second internal pads provided above the substrate, located in the first non-effective area, and electrically connected to the plurality of scanning lines in a one-to-one relationship; a semiconductor substrate including: peripheral wiring electrically connected to the substrate; a plurality of first bidirectional diodes provided above the substrate and located in the second non-effective area, where each of the first bidirectional diodes is electrically connected between one or more corresponding signal lines of the plurality of signal lines and the peripheral wiring; a plurality of second bidirectional diodes provided above the substrate and located in the second non-effective area, where each of the second bidirectional diodes is electrically connected between one or more corresponding scan lines of the plurality of scan lines and the peripheral wiring; a voltage adjustment pad provided above the substrate, located in the second non-effective area, and electrically connected to the peripheral wiring; a plurality of first external pads provided above the substrate, located in the second non-effective area, and electrically connected to the plurality of signal lines in a one-to-one relationship; and a plurality of second external pads provided above the substrate, located in the second non-effective area, and electrically connected to the plurality of scan lines in a one-to-one relationship; During the first read period, adjusting a voltage value applied to the voltage adjustment pad to bring the plurality of first bidirectional diodes and the plurality of second bidirectional diodes into a conductive state; sequentially applying first scan signals to h scan lines among the plurality of scan lines via h second external pads among the plurality of second external pads; reading out a plurality of first data signals from the plurality of first external pads each time the first scan signal is applied to each of the h scan lines; A state of the semiconductor substrate is determined based on the plurality of first data signals. [Brief explanation of the drawings]

[0009] [Figure 1] FIG. 1 is a cross-sectional view showing an X-ray detector according to the first embodiment. [Figure 2] FIG. 2 is a perspective view showing a support substrate, an X-ray detection panel, a circuit board, a plurality of FPCs, and an image transmission unit of the X-ray detector. [Figure 3] FIG. 3 is an enlarged cross-sectional view showing a part of the X-ray detection panel. [Figure 4] FIG. 4 is a circuit diagram showing the X-ray detection panel, the circuit board, and a plurality of FPCs. [Figure 5] FIG. 5 is a plan view showing the X-ray detection panel, and is a diagram for explaining the positional relationship between the effective area and the scintillator layer. [Figure 6] FIG. 6 is a cross-sectional view showing the X-ray detection panel of FIG. 5 taken along line VI-VI, and also showing an FPC. [Figure 7] FIG. 7 is a circuit diagram showing the conversion board, circuit board, image transmission unit, and power supply of the X-ray detector. [Figure 8] FIG. 8 is a diagram for explaining the method for manufacturing the X-ray detection panel according to the first embodiment, and is a circuit diagram showing a conversion substrate having an effective area, a first non-effective area, and a second non-effective area. [Figure 9] Figure 9 is a diagram following Figure 8 for explaining the manufacturing method of the X-ray detection panel according to the first embodiment, and shows a state in which multiple IC flexible substrates are overlaid on multiple pads of the conversion substrate. [Figure 10]FIG. 10 is a cross-sectional view showing the conversion board and IC flexible board of FIG. 9 taken along line XX, illustrating a state in which bumps of the IC flexible board are brought into contact with pads of the conversion board. [Figure 11] Figure 11 is a diagram following Figures 9 and 10 for explaining the manufacturing method of the X-ray detection panel according to the first embodiment, and shows the state in which, after a scintillator layer, a light-reflecting layer, and a moisture-proof cover are formed on the conversion substrate, bumps on an IC flexible substrate are abutted against the pads of the conversion substrate. [Figure 12] FIG. 12 is a diagram for explaining a manufacturing method of an X-ray detection panel according to Modification 1 of the first embodiment, and is a circuit diagram showing a conversion substrate having an effective area, a first non-effective area, and a second non-effective area. [Figure 13] FIG. 13 is a diagram for explaining a method for manufacturing an X-ray detection panel according to Modification 2 of the first embodiment, and is a circuit diagram showing a conversion substrate having an effective area, a first non-effective area, and a second non-effective area. [Figure 14] FIG. 14 is a diagram following FIG. 13 for explaining the manufacturing method of the X-ray detection panel according to the second modified example, and shows a state in which a plurality of IC flexible substrates are superimposed on a plurality of pads of the conversion substrate. [Figure 15] 15 is a cross-sectional view showing the conversion substrate and IC flexible substrate of FIG. 14 along line XV-XV, illustrating a state in which bumps of the IC flexible substrate are brought into contact with pads of the conversion substrate. [Figure 16] FIG. 16 is a diagram for explaining a method for manufacturing an X-ray detection panel according to Modification 3 of the first embodiment, and is a circuit diagram showing a conversion substrate having an effective area, a first non-effective area, and a second non-effective area. [Figure 17] FIG. 17 is a diagram for explaining a method for manufacturing an X-ray detection panel according to the fourth modification of the first embodiment, and is a circuit diagram showing a conversion substrate having an effective area, a first non-effective area, and a second non-effective area. [Figure 18] FIG. 18 is a circuit diagram showing a part of the conversion board of the X-ray detector according to the second embodiment. [Figure 19] FIG. 19 is an enlarged cross-sectional view of a part of the conversion board shown in FIG. DETAILED DESCRIPTION OF THE INVENTION

[0010] Hereinafter, embodiments and modifications of the present invention will be described with reference to the drawings. (First embodiment) First, the configuration of an X-ray detector 1 according to the first embodiment will be described. Fig. 1 is a cross-sectional view showing the X-ray detector 1 according to the first embodiment. The X-ray detector 1 is an X-ray image detector, and is an X-ray planar detector that uses an X-ray detection panel. The X-ray detector 1 of the first embodiment is an indirect conversion type X-ray detector.

[0011] 1, the X-ray detector 1 includes an X-ray detection module 10, a support substrate 12, spacers 9a, 9b, 9c, and 9d, a housing 51, an entrance window 52, ​​etc. The X-ray detection module 10 includes an X-ray detection panel PNL, a circuit board 11, an FPC (flexible printed circuit board) 2e1, etc. The X-ray detection panel PNL is located between the support substrate 12 and the entrance window 52. The X-ray detection panel PNL includes a moisture-proof cover 7 facing the entrance window 52.

[0012] The entrance window 52 is attached to the opening of the housing 51. The entrance window 52 allows X-rays to pass through. Therefore, the X-rays pass through the entrance window 52 and enter the X-ray detection panel PNL. The entrance window 52 is formed in a plate shape and has the function of protecting the inside of the housing 51. It is desirable that the entrance window 52 be formed thin and made of a material with low X-ray absorption rate. This makes it possible to reduce scattering of X-rays and attenuation of the X-ray amount that occur at the entrance window 52. As a result, a thin and lightweight X-ray detector 1 can be realized. The X-ray detection module 10, the support substrate 12, etc. are housed inside a space surrounded by a housing 51 and an entrance window 52.

[0013] The X-ray detection panel PNL is made by laminating thin members, and is therefore light and has low mechanical strength. For this reason, the X-ray detection panel PNL is fixed to one flat surface of the support substrate 12 via an adhesive sheet. The support substrate 12 is formed into a plate shape from, for example, an aluminum alloy, and has the strength required to stably hold the X-ray detection panel PNL. This makes it possible to prevent damage to the X-ray detection panel PNL when external vibrations or impacts are applied to the X-ray detector 1.

[0014] A circuit board 11 is fixed to the other surface of the support board 12 via spacers 9a and 9b. By using the spacers 9a and 9b, an electrical insulation distance can be maintained between the support board 12, which is mainly made of metal, and the circuit board 11. The circuit board 11 is fixed to the inner surface of the housing 51 via spacers 9c and 9d. By using the spacers 9c and 9d, an electrical insulation distance can be maintained between the housing 51, which is mainly made of metal, and the circuit board 11. The housing 51 supports the support board 12 and the like via the circuit board 11 and the spacers 9a, 9b, 9c, and 9d.

[0015] A connector corresponding to the FPC 2e1 is mounted on the circuit board 11, and the FPC 2e1 is electrically connected to the circuit board 11 via the connector. A thermocompression bonding method using an ACF (anisotropic conductive film) is used to connect the FPC 2e1 and the X-ray detection panel PNL. This method ensures electrical connection between the multiple fine pads of the X-ray detection panel PNL and the multiple fine pads of the FPC 2e1, and physically fixes the FPC 2e1 to the X-ray detection panel PNL. The pads of the X-ray detection panel PNL will be described later.

[0016] As described above, the circuit board 11 is electrically connected to the X-ray detection panel PNL via the connector, the FPC 2e1, etc. The circuit board 11 electrically drives the X-ray detection panel PNL and electrically processes output signals from the X-ray detection panel PNL.

[0017] Fig. 2 is a perspective view showing the support substrate 12, X-ray detection panel PNL, circuit board 11, multiple FPCs 2e1 and 2e2, and image transmission unit 4 of the X-ray detector 1 according to the first embodiment. Note that Fig. 2 does not show all components of the X-ray detector 1. Some components of the X-ray detector 1, such as a bonded body described below, are omitted from Fig. 2. With regard to the conversion substrate 2, an effective area (effective area DA described below), which is the detection area, is shown, but a non-detection area (non-effective area NDA described below) is not shown.

[0018] 2, the X-ray detection panel PNL includes a conversion substrate 2, a scintillator layer 5, etc. The conversion substrate 2 functions as a semiconductor substrate and includes a base material 2a, a plurality of scanning lines (or gate lines) G, a plurality of signal lines (or data lines) U, a plurality of thin-film transistors 13a as a plurality of switching elements, a plurality of thin-film photodiodes 15a as a plurality of conversion elements, etc. Note that the numbers, arrangements, etc. of the scanning lines G, signal lines U, thin-film transistors 13a, thin-film photodiodes 15a, and FPCs 2e1, 2e2 are not limited to the example in FIG.

[0019] The plurality of scanning lines G are provided above the base material 2a, extend in a row direction X as a first direction, and are arranged at predetermined intervals in a column direction Y intersecting the first direction. The plurality of signal lines U are provided above the base material 2a, extend in the column direction Y as a second direction, intersect with the plurality of scanning lines G, and are arranged at predetermined intervals in the row direction X.

[0020] A plurality of pixels PX are provided on the upper side of one surface of the base material 2a. The plurality of pixels PX are provided in a rectangular region defined by scanning lines G and signal lines U. One pixel PX corresponds to one pixel of an X-ray image. The plurality of pixels PX are arranged in a matrix in the row direction X and column direction Y. From the above, the conversion substrate 2 is an array substrate.

[0021] Each pixel PX has a thin-film photodiode 15a, a thin-film transistor 13a, etc. Hereinafter, the thin-film photodiode 15a will be referred to as a TFD 15a, and the thin-film transistor 13a will be referred to as a TFT 13a. The TFT 13a is provided above the substrate 2a and is electrically connected to a corresponding one of the multiple scanning lines G and a corresponding one of the multiple signal lines U. The TFD 15a is provided above the substrate 2a and is electrically connected to the TFT 13a.

[0022] The scanning lines G are electrically connected to the circuit board 11 via the FPC 2e1. The circuit board 11 applies scanning signals S1 to the scanning lines G via the FPC 2e1. The signal lines U are electrically connected to the circuit board 11 via the FPC 2e2. An image data signal S2 (charges accumulated in the TFD 15a) converted by the TFD 15a and a scintillator layer 5 (described later) is transmitted to the circuit board 11 via the TFT 13a, the signal lines U, and the FPC 2e2.

[0023] The X-ray detector 1 includes an image transmission unit 4. The image transmission unit 4 is connected to a circuit board 11 via wiring 4a. The image transmission unit 4 may be incorporated into the circuit board 11. The image transmission unit 4 generates an X-ray image based on image data signals that have been converted into digital signals by a plurality of analog-to-digital converters (not shown). The generated X-ray image data is output from the image transmission unit 4 to an external device.

[0024] Fig. 3 is an enlarged cross-sectional view showing a portion of the X-ray detection panel PNL according to the first embodiment. As shown in Fig. 3, the conversion substrate 2 has a base material 2a, a plurality of pixels PX, and insulating layers 21, 22, 23, 24, and 25. The plurality of pixels PX are arranged above the base material 2a and located in an effective area DA that is effective for detecting radiation (e.g., X-rays). Each pixel PX includes a first conversion unit 2b including a TFT 13a, a conductive layer CL as a pixel electrode, and a TFD 15a.

[0025] The TFT 13a has a gate electrode GE, a semiconductor layer SC, a source electrode SE, and a drain electrode DE. The TFD 15a is composed of a thin-film photodiode.

[0026] The substrate 2a has a plate-like shape and is made of an insulating material. Examples of the insulating material include glass such as alkali-free glass. In the first embodiment, the substrate 2a is made of glass, but it may be made of an organic insulating material such as resin. The planar shape of the substrate 2a is, for example, a rectangle. The thickness of the substrate 2a is, for example, 0.5 to 0.7 mm. The insulating layer 21 is provided on the substrate 2a.

[0027] A gate electrode GE is formed on the insulating layer 21. The gate electrode GE is electrically connected to the scanning line G. An insulating layer 22 is provided on the insulating layer 21 and the gate electrode GE. A semiconductor layer SC is provided on the insulating layer 22 and faces the gate electrode GE. The semiconductor layer SC is formed of a semiconductor material such as amorphous silicon as an amorphous semiconductor or polycrystalline silicon as a polycrystalline semiconductor.

[0028] A source electrode SE and a drain electrode DE are provided on the insulating layer 22 and the semiconductor layer SC. The gate electrode GE, the source electrode SE, the drain electrode DE, the scanning line G, and the signal line U are formed using a low-resistance metal such as aluminum or chromium.

[0029] The source electrode SE is electrically connected to the source region of the semiconductor layer SC. The source electrode SE is also electrically connected to the signal line U. The drain electrode DE is electrically connected to the drain region of the semiconductor layer SC.

[0030] The insulating layer 23 is provided on the insulating layer 22, the semiconductor layer SC, the source electrode SE, and the drain electrode DE. The conductive layer CL is formed above the insulating layer 23 and is electrically connected to the drain electrode DE of the TFT 13a. The TFD 15a is formed on the conductive layer CL and is electrically connected to the conductive layer CL. The TFD 15a is formed through a film formation process and a patterning process using a dry etching method.

[0031] The insulating layer 24 is disposed on the insulating layer 23, the conductive layer CL, and the TFD 15a. The bias line BL1 is disposed on the insulating layer 24 and is connected to the TFD 15a through a contact hole formed in the insulating layer 24. The insulating layer 25 is disposed on the insulating layer 24 and the bias line BL1.

[0032] The insulating layers 21, 22, 23, 24, and 25 are made of insulating materials such as inorganic insulating materials and organic insulating materials. Examples of inorganic insulating materials include oxide insulating materials, nitride insulating materials, and oxynitride insulating materials. Examples of organic insulating materials include resins.

[0033] The scintillator layer 5 is provided on the conversion substrate 2 (multiple TFDs 15a). The scintillator layer 5 is located at least in the active area DA and covers the upper parts of the multiple TFDs 15a. The scintillator layer 5 is configured to convert incident X-rays (radiation) into visible light (fluorescence).

[0034] The TFD 15a converts visible light incident from the scintillator layer 5 side into electric charges whose magnitude corresponds to the intensity of the visible light. The converted electric charges are stored in the TFD 15a. One of the TFDs 15a electrically connected to the conductive layer CL and a portion of the scintillator layer 5 overlapping the TFD 15a constitute the first conversion unit 2b. The first conversion unit 2b is electrically connected to the conductive layer CL and is located in the area overlapping the conductive layer CL, and is configured to convert incident X-rays into an image data signal S2.

[0035] The TFT 13a can switch between charging and discharging the TFD 15a. If the self-capacitance of the TFD 15a is insufficient, the conversion substrate 2 may further include a capacitor (storage capacitor) to store the charge converted by the TFD 15a.

[0036] The scintillator layer 5 is made of thallium-activated cesium iodide (CsI:Tl). When the scintillator layer 5 is formed using a vacuum deposition method, the scintillator layer 5 is made up of an aggregate of a plurality of columnar crystals. The thickness of the scintillator layer 5 is, for example, 600 μm. At the outermost surface of the scintillator layer 5, the thickness of the columnar crystals of the scintillator layer 5 is 8 to 12 μm.

[0037] The material forming the scintillator layer 5 is not limited to CsI:Tl, but may also be formed of thallium-activated sodium iodide (NaI:Tl), sodium-activated cesium iodide (CsI:Na), europium-activated cesium bromide (CsBr:Eu), sodium iodide (NaI), or the like.

[0038] When forming the scintillator layer 5 using the vacuum deposition method, a mask with an opening is used. In this case, the scintillator layer 5 is formed in the area facing the opening on the conversion substrate 2. The scintillator material deposited by deposition is also deposited on the surface of the mask. The scintillator material is also deposited near the opening of the mask, and crystals grow so as to gradually extend into the opening. When the crystals extend from the mask into the opening, deposition of the scintillator material onto the conversion substrate 2 near the opening is suppressed. Therefore, as shown in Figure 2, the thickness of the scintillator layer 5 near the periphery gradually decreases outward.

[0039] Alternatively, the scintillator layer 5 may have a plurality of scintillator sections arranged in a matrix, each having a rectangular prism shape, and provided in a one-to-one correspondence with the first conversion section 2b. When forming such a scintillator layer 5, a scintillator material obtained by mixing gadolinium oxysulfide (Gd2O2S) phosphor particles with a binder is applied to the conversion substrate 2, and the scintillator material is baked and hardened. Then, dicing is performed using a dicer or the like to form lattice-shaped grooves in the scintillator material. In the above case, air or an inert gas such as nitrogen (N2) for preventing oxidation is sealed between the plurality of scintillator sections. Alternatively, the space between the plurality of scintillator sections may be set to a space reduced in pressure below atmospheric pressure.

[0040] In this embodiment, the X-ray detection panel PNL further includes a light-reflecting layer 6. The light-reflecting layer 6 is provided on the scintillator layer 5. In other words, the light-reflecting layer 6 is provided on the X-ray incident side of the scintillator layer 5. The light-reflecting layer 6 is located at least in the effective area DA and covers the upper surface of the scintillator layer 5. The light-reflecting layer 6 is provided to improve the light (fluorescence) utilization efficiency and sensitivity characteristics. That is, the light-reflecting layer 6 reflects light generated in the scintillator layer 5 and traveling in the direction opposite to the side where the TFD 15a is provided, so that the light is directed toward the TFD 15a. However, the light-reflecting layer 6 is not necessarily required and may be provided depending on the sensitivity characteristics required of the X-ray detection panel PNL.

[0041] For example, a coating material made of a mixture of light-scattering particles such as titanium oxide (TiO2), a resin, and a solvent can be applied onto the scintillator layer 5, and then the coating material can be dried to form the light-reflecting layer 6.

[0042] The structure of the light-reflecting layer 6 and the manufacturing method of the light-reflecting layer 6 are not limited to the above examples and can be modified in various ways. For example, the light-reflecting layer 6 may be formed by depositing a layer made of a metal with high light reflectivity, such as a silver alloy or aluminum, on the scintillator layer 5. Alternatively, the light-reflecting layer 6 may be formed by providing, on the scintillator layer 5, a sheet whose surface includes a metal layer with high light reflectivity, such as a silver alloy or aluminum, or a resin sheet containing light-scattering particles.

[0043] A moisture-proof cover (moisture-proof sheet) 7 covers the scintillator layer 5 and the light-reflecting layer 6. The moisture-proof cover 7 is provided to prevent the properties of the light-reflecting layer 6 and the scintillator layer 5 from deteriorating due to moisture contained in the air. The moisture-proof cover 7 completely covers the exposed portion of the scintillator layer 5. A gap may be provided between the moisture-proof cover 7 and the light-reflecting layer 6, etc., or the moisture-proof cover 7 may be in contact with the light-reflecting layer 6, etc.

[0044] The moisture-proof cover 7 is formed of a sheet containing a metal. Examples of the metal include aluminum-containing metals, copper-containing metals, magnesium-containing metals, tungsten-containing metals, stainless steel, and Kovar. When the moisture-proof cover 7 contains a metal, the moisture-proof cover 7 can prevent or significantly reduce moisture penetration.

[0045] FIG. 4 is a circuit diagram showing the X-ray detection panel PNL, the circuit board 11, and the plurality of FPCs 2e1 and 2e2 according to the first embodiment. 2 to 4, the circuit board 11 is provided with a drive circuit 11a and a detection circuit 11b. These circuits can be provided on a single board, or can be provided separately on multiple boards. The other ends of the multiple wires provided on the FPC 2e1 are electrically connected to the drive circuit 11a, respectively. The other ends of the multiple wires provided on the FPC 2e2 are electrically connected to the detection circuit 11b, respectively.

[0046] The driving circuit 11a is electrically connected to the plurality of scanning lines G via the FPC 2e1 and can sequentially scan the plurality of scanning lines G. The driving circuit 11a switches the TFT 13a between an on state and an off state. The driving circuit 11a has a plurality of gate drivers 11aa and a row selection circuit 11ab. A scanning signal S1 is input to the row selection circuit 11ab from an image processing unit (not shown) or the like provided outside the X-ray detector 1. The row selection circuit 11ab inputs the scanning signal S1 to the corresponding gate driver 11aa in accordance with the scanning direction of the X-ray image. The gate driver 11aa inputs the scanning signal S1 to the corresponding scanning line G.

[0047] For example, the driver circuit 11a sequentially inputs a scanning signal S1 to multiple scanning lines G via the FPC 2e1. The scanning signal S1 input to the scanning line G turns the TFT 13a on or off, and when the TFT 13a is turned on, the charge (image data signal S2) from the TFD 15a is output to the FPC 2e2.

[0048] The detection circuit 11b is electrically connected to the multiple signal lines U and can detect image data signals S2 generated by the multiple pixels PX. The detection circuit 11b includes multiple integrating amplifiers 11ba, multiple selection circuits 11bb, and multiple AD converters (Analog-to-Digital Converters) 11bc. Each integrating amplifier 11ba is electrically connected to one signal line U. The integrating amplifier 11ba sequentially receives image data signals S2 from the multiple first conversion units 2b. The integrating amplifier 11ba then integrates the current flowing within a certain time period and outputs a voltage corresponding to the integrated value to the selection circuit 11bb. In this manner, the value (amount of charge) of the current flowing through the signal line U within a predetermined time period can be converted into a voltage value. That is, the integrating amplifier 11ba converts image data information corresponding to the intensity distribution of fluorescence generated in the scintillator layer 5 into potential information.

[0049] The selection circuit 11bb selects the integrating amplifier 11ba to perform reading and sequentially reads out the image data signals S2 converted into potential information. The AD converter 11bc sequentially converts the read-out image data signals S2 into digital signals. The digital image data signals S2 are input to an image processing unit via wiring. The image processing unit creates an X-ray image based on the digital image data signals S2. The image processing unit can also be integrated with the circuit board 11.

[0050] Fig. 5 is a plan view showing the X-ray detection panel PNL according to the first embodiment, and is a diagram for explaining the positional relationship between the effective area DA and the scintillator layer 5. In Fig. 5, the scintillator layer 5 is shaded diagonally upward to the right, and the bonded body 8 is shaded diagonally downward to the right. Fig. 6 is a cross-sectional view showing the X-ray detection panel PNL of Fig. 5 taken along line VI-VI, and also showing the FPC 2e1.

[0051] 5 and 6, the conversion substrate 2 has an effective area DA and a frame-shaped first non-effective area NDA1 surrounding the effective area DA. The base material 2a is located in the effective area DA and the first non-effective area NDA1.

[0052] The scintillator layer 5 is located at least in the active area DA. The conversion substrate 2 further has a plurality of pads 2d1 and a plurality of pads 2d2. The pad 2d2 functions as a first internal pad, is provided above the substrate 2a, and is located in the first non-active area NDA1. The pad 2d1 functions as a second internal pad, is provided above the substrate 2a, and is located in the first non-active area NDA1. In this embodiment, the plurality of pads 2d1 are arranged along the left side of the substrate 2a, and the plurality of pads 2d2 are arranged along the bottom side of the substrate 2a. Note that FIG. 5 shows the plurality of pads schematically, and the number, shape, size, position, and pitch of the plurality of pads are not limited to the example shown in FIG. 5.

[0053] One scanning line G extends through the active area DA and the first non-active area NDA1 and is electrically connected to one of the pads 2d1. One signal line U extends through the active area DA and the first non-active area NDA1 and is electrically connected to one of the pads 2d2. In other words, the pads 2d1 are electrically connected to the scanning lines G in a one-to-one relationship, and the pads 2d2 are electrically connected to the signal lines U in a one-to-one relationship.

[0054] One pad 2d1 is electrically connected to one of the multiple wirings provided on the FPC 2e1, and one pad 2d2 is electrically connected to one of the multiple wirings provided on the FPC 2e2 (Figure 2).

[0055] The X-ray detection panel PNL further includes an assembly 8. The assembly 8 is provided around the scintillator layer 5 and is located inside the pads 2d1 and the pads 2d2. The assembly 8 has a frame shape and extends continuously around the scintillator layer 5. The assembly 8 is joined to the conversion substrate 2 (for example, the insulating layer 25).

[0056] The moisture-proof cover 7 is provided on the conversion substrate 2, the scintillator layer 5, and the light-reflecting layer 6. The moisture-proof cover 7 is located in the effective area DA and the first non-effective area NDA1. In the plan view shown in FIG. 5, the moisture-proof cover 7 completely covers the scintillator layer 5. As shown in FIG. 6, the portion of the scintillator layer 5 that is not covered by the conversion substrate 2 and the assembly 8 is completely covered by the moisture-proof cover 7. The moisture-proof cover 7 is bonded to the assembly 8. The moisture-proof cover 7, together with the conversion substrate 2 and the assembly 8, seals the scintillator layer 5 and the light-reflecting layer 6.

[0057] For example, if the moisture-proof cover 7 and the assembly 8 are joined in an environment where the pressure is reduced below atmospheric pressure, the moisture-proof cover 7 can be brought into contact with the light-reflecting layer 6 and the like. Generally, the scintillator layer 5 has voids that account for approximately 10 to 40% of its volume. If the moisture-proof cover 7 and the assembly 8 are joined in an environment where the pressure is reduced below atmospheric pressure, damage to the moisture-proof cover 7 can be suppressed even when the X-ray detector 1 is transported by aircraft or the like. For the above reasons, it is preferable that the pressure in the space defined by the assembly 8 and the moisture-proof cover 7 be lower than atmospheric pressure.

[0058] The bonding body 8 is located between the conversion substrate 2 and the moisture-proof cover 7 and is made of a thermoplastic resin. By heating the vicinity of the periphery of the moisture-proof cover 7, the bonding body 8 bonds the conversion substrate 2 and the moisture-proof cover 7 together. The FPC 2e1 is fixed to the conversion substrate 2 (X-ray detection panel PNL) by a connecting material AD, and is electrically connected to the pad 2d1. The connecting material AD is made of ACF.

[0059] FIG. 7 is a circuit diagram showing the conversion board 2, the circuit board 11, the image transmission unit 4, and the power supply PS1 of the X-ray detector 1 according to the first embodiment. As shown in Fig. 7, pixels PX are arranged in a matrix with a row direction X and a column direction Y. For example, pixels PX are effective for detecting radiation (e.g., X-rays). Each pixel PX includes a TFT 13a, a TFD 15a, etc. In the figure, the capacitor represents the self-capacitance of the TFD 15a.

[0060] Each TFD 15a is electrically connected to one corresponding TFT 13a among the plurality of TFTs 13a. Each TFD 15a is also electrically connected to a bias line BL1. More specifically, the anode of each TFD 15a is electrically connected to the bias line BL1, and the cathode is electrically connected to one corresponding TFT 13a. The bias line BL1 is electrically connected to a power supply PS1.

[0061] The image transmission unit 4 has an offset correction processing unit 31, an offset correction table 32, a gain correction processing unit 33, a gain correction table 34, a defect correction processing unit 35, and a defect correction table 36. The offset correction table 32, the gain correction table 34, and the defect correction table 36 are stored in a memory unit inside the image transmission unit 4.

[0062] The offset correction processing unit 31 is connected to the detection circuit 11b and can refer to an offset correction table 32. The gain correction processing unit 33 is connected to the offset correction processing unit 31 and can refer to a gain correction table 34. The defect correction processing unit 35 is connected to the gain correction processing unit 33 and can refer to a defect correction table 36.

[0063] The image data signal S2 output from the detection circuit 11b is subjected to image processing by an offset correction processing unit 31 to remove dark current components of the pixels PX inside the X-ray detection panel PNL and offset components of the integral amplifier 11ba. A gain correction processing unit 33 performs image processing to remove sensitivity differences between the pixels PX and amplification factor differences of the integral amplifier 11ba. A defect correction processing unit 35 performs defect correction processing to remove pixel data of defective pixels. By performing these image processing operations, an X-ray image can be displayed on the image display device.

[0064] For the offset correction processing unit 31, gain correction processing unit 33, and defect correction processing unit 35, an offset correction table 32, a gain correction table 34, and a defect correction table 36 that store parameters used in calculations are prepared in the image transmission unit 4. The offset correction processing unit 31, gain correction processing unit 33, and defect correction processing unit 35 perform their respective correction processes in accordance with the contents of each table. The X-ray detector 1 according to the first embodiment is configured as described above.

[0065] Next, a method for manufacturing the X-ray detection panel PNL according to the first embodiment will be described. Fig. 8 is a diagram for explaining the method for manufacturing the X-ray detection panel PNL according to the first embodiment, and is a circuit diagram showing the conversion substrate 2 having an effective area DA, a first non-effective area NDA1, and a second non-effective area NDA2.

[0066] Fig. 9 is a diagram following Fig. 8 for explaining the manufacturing method of the X-ray detection panel PNL according to the first embodiment, and shows a state in which a plurality of IC flexible substrates 60, 70 are superimposed on a plurality of pads 2d1, 2d2 of the conversion substrate 2. Bidirectional diodes and the like are not shown in Fig. 9. Fig. 10 is a cross-sectional view showing the conversion substrate 2 and the IC flexible substrate 60 of Fig. 9 along line XX, and shows a state in which the bumps 61 of the IC flexible substrate 60 are brought into contact with the pads 2d1 of the conversion substrate 2. Figure 11 is a diagram following Figures 9 and 10 for explaining the manufacturing method of the X-ray detection panel PNL according to the first embodiment, and shows the state in which, after the scintillator layer 5, the light reflecting layer 6, and the moisture-proof cover 7 are formed on the conversion substrate 2, the bumps 61 of the IC flexible substrate 60 are abutted against the pads 2d1 of the conversion substrate 2.

[0067] 8, when manufacturing the X-ray detection panel PNL is started, first, a conversion substrate 2 shown in Fig. 8 is prepared. The conversion substrate 2 includes a base material 2a, a plurality of scanning lines G, a plurality of signal lines U, a plurality of pixels PX, a plurality of pads 2d2, a plurality of pads 2d1, peripheral wiring WL, a plurality of first bidirectional diodes BD1, a plurality of second bidirectional diodes BD2, and a voltage adjustment pad cd.

[0068] The base material 2a is located not only in the effective area DA and the first non-effective area NDA1 but also in the second non-effective area NDA2. The second non-effective area NDA2 is a frame-shaped area surrounding the first non-effective area NDA1. The second non-effective area NDA2 has a first extending area A2a, a second extending area A2b, a third extending area A2c, and a fourth extending area A2d. The first extending area A2a extends in the row direction X, which is the direction in which the multiple scanning lines G extend. The second extending area A2b extends in the column direction Y, which is the direction in which the multiple signal lines U extend. The third extending area A2c extends in the row direction X and, together with the first extending area A2a, sandwiches the effective area DA in the column direction Y. The fourth extending area A2d extends in the column direction Y and, together with the second extending area A2b, sandwiches the effective area DA in the row direction X.

[0069] Each pixel PX has a TFT 13a, a conductive layer (pixel electrode) CL, and a TFD 15a which is a photoelectric conversion element (FIG. 3). The peripheral wiring WL is provided above the base material 2a, located in the second non-effective area NDA2, and electrically connected to the plurality of signal lines U and the plurality of scanning lines G. The peripheral wiring WL is formed using a low-resistance metal, similar to the scanning lines G and signal lines U. The peripheral wiring WL has an L-shape and is located in the first extension region A2a and the second extension region A2b. However, the peripheral wiring WL may also be located in the third extension region A2c, the fourth extension region A2d, or both the third extension region A2c and the fourth extension region A2d.

[0070] The first bidirectional diodes BD1 and the second bidirectional diodes BD2 are provided above the substrate 2a and located in a second non-active area NDA2. In the first embodiment, the first bidirectional diodes BD1 are located in the first extension area A2a, and the second bidirectional diodes BD2 are located in the second extension area A2b.

[0071] Each of the first bidirectional diodes BD1 is electrically connected between one or more corresponding signal lines U among the plurality of signal lines U and the peripheral wiring WL. Each of the second bidirectional diodes BD2 is electrically connected between one or more corresponding scan lines G among the plurality of scan lines G and the peripheral wiring WL. In the first embodiment, the plurality of first bidirectional diodes BD1 are electrically connected to the plurality of signal lines U in a one-to-one relationship, and the plurality of second bidirectional diodes BD2 are electrically connected to the plurality of scan lines G in a one-to-one relationship.

[0072] The first bidirectional diode BD1 and the second bidirectional diode BD2 are formed using diode-connected TFTs and can be formed of the same material at the same time as the TFT 13a is formed.

[0073] Each signal line U is electrically connected to the peripheral wiring WL via a corresponding one of the pads 2d2 and a corresponding one of the first bidirectional diodes BD1, in that order. Each scanning line G is electrically connected to the peripheral wiring WL via a corresponding one of the pads 2d1 and a corresponding one of the second bidirectional diodes BD2, in that order. The peripheral wiring WL, the plurality of first bidirectional diodes BD1, and the plurality of second bidirectional diodes BD2 form a circuit called an OSR (Outer Short Ring).

[0074] The voltage adjustment pad cd is provided above the substrate 2a, located in the second non-active area NDA2, and electrically connected to the peripheral wiring WL. The conduction state of the multiple first bidirectional diodes BD1 and the multiple second bidirectional diodes BD2 can be controlled by adjusting the voltage applied to the voltage adjustment pad cd. For example, applying a voltage of +20 V to the voltage adjustment pad cd can switch the first bidirectional diode BD1 and the second bidirectional diode BD2 into a conductive state (ON state). Applying a voltage of −5 V to the voltage adjustment pad cd can switch the first bidirectional diode BD1 and the second bidirectional diode BD2 into a non-conductive state (OFF state).

[0075] 9 and 10, after preparing the conversion substrate 2 configured as described above, a plurality of IC flexible substrates 60 are placed on a plurality of pads 2d1 of the conversion substrate 2, and a plurality of bumps 61 of the IC flexible substrate 60 are brought into one-to-one contact with the plurality of pads 2d1. Furthermore, a plurality of IC flexible substrates 70 are placed on a plurality of pads 2d2 of the conversion substrate 2, and a plurality of bumps (not shown) of the IC flexible substrate 70 are brought into one-to-one contact with the plurality of pads 2d2. Furthermore, probe needles 91 of a prober 90 are pierced into voltage adjustment pads cd.

[0076] Although the example in which bumps are brought into contact with the pads 2d1 and 2d2 and a probe needle is inserted into the voltage adjustment pad cd has been shown, it is also possible to insert a probe needle into the pads 2d1 and 2d2 or to bring a bump into contact with the voltage adjustment pad cd. It is not necessary to bring all the bumps 61 into contact with all the pads 2d1. In this case, the pads 2d1 to which the bumps 61 are to be brought into contact may be changed in a time-division manner.

[0077] A scan signal S1 is applied to the pads 2d1, a plurality of data signals are read from the pads 2d2, and the voltage applied from the probe needles 91 to the voltage adjustment pads cd is adjusted to bring the plurality of first bidirectional diodes BD1 and the plurality of second bidirectional diodes BD2 into a non-conductive state during periods other than the determination period for determining the state of the conversion substrate 2. Since the first bidirectional diode BD1 and the second bidirectional diode BD2 can be set to an electrically insulated state (high resistance state), the pixels PX, scan lines G, and signal lines U can be protected from unwanted static electricity that may be input from the second non-active area NDA2 side of the conversion substrate 2.

[0078] Subsequently, during a first readout period, the voltage value applied to the voltage adjustment pad cd via the probe needle 91 is adjusted to bring the plurality of first bidirectional diodes BD1 and the plurality of second bidirectional diodes BD2 into a conductive state, the drive circuit 81a sequentially applies a first scanning signal to h scanning lines G out of the plurality of scanning lines G via h pads 2d1 out of the plurality of pads 2d1, and the detection circuit 81b reads out a plurality of first data signals from the plurality of pads 2d2 each time the first scanning signal is applied to each of the h scanning lines G. In one horizontal scanning period of the first readout period, the first scanning signal is applied (the potential changes) to only one scanning line G, and the multiple TFTs 13a electrically connected to this one scanning line G are turned on.

[0079] This allows the state of the conversion substrate 2 to be determined based on the plurality of first data signals. For example, if the above test is performed without irradiating the TFDs 15a in the effective area DA of the conversion substrate 2 with visible light, it is possible to determine whether a black (low gradation value) first data signal was successfully read. To determine the state of the conversion substrate 2, a histogram of the gradation values ​​of the first data signals is created. For example, pixels PX that output first data signals with gradation values ​​that are 5σ or more away from the average gradation value can be determined as defective pixels, and pixels PX that output first data signals with gradation values ​​that are less than 5σ away from the average gradation value can be determined as normal pixels.

[0080] To determine the state of the conversion substrate 2 before forming the scintillator layer 5, the effective area DA of the conversion substrate 2 may be irradiated with visible light. In this case, during the first accumulation period before the first readout period, the voltage applied to the voltage adjustment pad cd via the probe needle 91 is adjusted to bring the first bidirectional diodes BD1 and the second bidirectional diodes BD2 into a conductive state, and visible light is irradiated onto the effective area DA of the conversion substrate 2 to accumulate charge in the TFD 15a. In this case, it can be determined whether the first data signal of white (predetermined gradation value) was successfully read out during the first readout period. As described above, providing the first accumulation period in which visible light is irradiated allows for more precise inspection of the conversion substrate 2. Here, h is an integer equal to or greater than 2. In the first readout period, the first scanning signal may be applied sequentially to two or more scanning lines G, or the first scanning signal may be applied sequentially to all scanning lines G. If the first scanning signal is not applied sequentially to all scanning lines G in the first readout period, the operation in the first accumulation period and the operation in the first readout period can be repeated to apply the first scanning signal to all scanning lines G in multiple first readout periods. During the period after the determination period, the voltage value applied from the probe needle 91 to the voltage adjustment pad cd can be adjusted, and the multiple first bidirectional diodes BD1 and the multiple second bidirectional diodes BD2 can be set to a non-conductive state, as described above.

[0081] 11, when the state of the conversion substrate 2 is determined to be normal based on the plurality of first data signals read out from all pads 2d2 by sequentially applying a first scanning signal to all scanning lines G, the plurality of IC flexible substrates 60, 70 are removed from the conversion substrate 2, and a scintillator layer 5 is formed on the active area DA of the conversion substrate 2. Next, a moisture-proof cover 7 is bonded to the first non-active area NDA1 of the conversion substrate 2 with an adhesive 8, and the scintillator layer 5 and light-reflecting layer 6 are covered by the conversion substrate 2, the moisture-proof cover 7, and the adhesive 8.

[0082] Thereafter, a plurality of IC flexible substrates 60 are placed on the plurality of pads 2d1 of the conversion substrate 2, and a plurality of bumps 61 of the IC flexible substrate 60 are brought into one-to-one contact with the plurality of pads 2d1. Furthermore, a plurality of IC flexible substrates 70 are placed on the plurality of pads 2d2 of the conversion substrate 2, and a plurality of bumps (not shown) of the IC flexible substrate 70 are brought into one-to-one contact with the plurality of pads 2d2. Furthermore, probe needles 91 of a prober 90 are pierced into voltage adjustment pads cd.

[0083] Subsequently, during the second accumulation period, the voltage applied to the voltage adjustment pad cd via the probe needle 91 is adjusted to bring the first bidirectional diodes BD1 and the second bidirectional diodes BD2 into a conductive state, and the scintillator layer 5 is irradiated with X-rays (radiation), causing charges to accumulate in the TFD 15a.

[0084] Then, in a second readout period after the second accumulation period, the voltage value applied to the voltage adjustment pad cd via the probe needle 91 is adjusted to bring the plurality of first bidirectional diodes BD1 and the plurality of second bidirectional diodes BD2 into a conductive state, the drive circuit 81a sequentially applies a second scanning signal to i scanning lines G out of the plurality of scanning lines G via i pads 2d1 out of the plurality of pads 2d1, and the detection circuit 81b reads out a plurality of second data signals from the plurality of pads 2d2 each time the second scanning signal is applied to each of the i scanning lines G. Here, i is an integer equal to or greater than 2. In the second readout period, the second scanning signal may be applied sequentially to two or more scanning lines G, or the second scanning signal may be applied sequentially to all scanning lines G. If the second scanning signal is not applied sequentially to all scanning lines G in the second readout period, the operation in the second accumulation period and the operation in the second readout period can be repeated to apply the second scanning signal to all scanning lines G in multiple second readout periods.

[0085] This makes it possible to determine the states of the conversion substrate 2 and the scintillator layer 5 based on the plurality of second data signals. Then, it is possible to determine whether each pixel PX after the scintillator layer 5 is formed is a normal pixel or a defective pixel.

[0086] During the period after the determination period, which includes the second accumulation period and the second readout period, the voltage value applied from the probe needle 91 to the voltage adjustment pad cd can be adjusted, and the multiple first bidirectional diodes BD1 and the multiple second bidirectional diodes BD2 can be set to a non-conductive state, as described above.

[0087] 8, when the state of the conversion substrate 2 is determined to be normal based on a plurality of second data signals read out from all pads 2d2 by sequentially applying second scanning signals to all scanning lines G, the second non-effective area NDA2 of the conversion substrate 2 is removed. For example, the second non-effective area NDA2 of the conversion substrate 2 can be removed by drawing a scribe line at the boundary between the first non-effective area NDA1 and the second non-effective area NDA2. This makes it possible to form an X-ray detection panel (radiation detection panel) PNL that includes the conversion substrate 2 having the effective area DA and the first non-effective area NDA1, the scintillator layer 5, and the moisture-proof cover 7.

[0088] According to the method for manufacturing the X-ray detector 1 and the X-ray detection panel PNL according to the first embodiment configured as described above, the conversion substrate 2 as a semiconductor substrate includes the base material 2a located in the effective area DA, the first non-effective area NDA1, and the second non-effective area NDA2, a plurality of scanning lines G, a plurality of signal lines U, a plurality of pixels PX, a plurality of pads 2d2, a plurality of pads 2d1, peripheral wiring WL, a plurality of first bidirectional diodes BD1, a plurality of second bidirectional diodes BD2, and a voltage adjustment pad cd.

[0089] By providing the peripheral wiring WL, the pixels PX and the like can be protected from unwanted static electricity that may be input from the outside. For example, it is possible to prevent a large current from flowing through a specific pixel PX. This allows the conversion substrate 2 to be obtained with a high manufacturing yield.

[0090] However, by providing the peripheral wiring WL, the peripheral wiring WL is electrically connected to the scanning lines G and the signal lines U, so there is a risk that the scanning lines G and the signal lines U may be adversely affected by disturbance noise from the peripheral wiring WL. For example, even if a pixel PX outputs a first data signal having a gradation value that is less than 5σ from the average gradation value, if the first data signal is adversely affected by external noise and the detection circuit 81b detects a first data signal having a gradation value that is more than 5σ away from the average value, the detection circuit 81b may mistakenly determine that a pixel PX that is actually normal is a defective pixel. Alternatively, even if pixel PX outputs a first data signal having a gradation value that is 5σ or more away from the average gradation value, if external noise adversely affects the first data signal and detection circuit 81b detects a first data signal having a gradation value that is less than 5σ from the average value, there is a risk that detection circuit 81b will mistakenly determine that a pixel PX that is actually defective is a normal pixel.

[0091] Therefore, in the first embodiment, the conversion substrate 2 is provided with a voltage adjustment pad cd. By adjusting the voltage value applied to the voltage adjustment pad cd and bringing the first bidirectional diodes BD1 and the second bidirectional diodes BD2 into a non-conductive state (electrically insulated state), the peripheral wiring WL can maintain its function of protecting the pixels PX and the like.

[0092] Furthermore, during a determination period in which a scan signal is applied to the pads 2d1 and a plurality of data signals are read from the pads 2d2, the voltage applied to the voltage adjustment pad cd can be adjusted to bring the plurality of first bidirectional diodes BD1 and the plurality of second bidirectional diodes BD2 into a conductive state. By setting the first bidirectional diode BD1 and the second bidirectional diode BD2 into a conductive state only during the determination period, it is possible to reduce the adverse effects of disturbance noise on the scan lines G and the signal lines U. This improves the detection accuracy and enables highly reliable determination of whether the plurality of pixels PX are normal or defective, thereby providing a high-quality conversion substrate 2 and a high-quality X-ray detection panel PNL.

[0093] Even after the scintillator layer 5 is formed on the conversion substrate 2, the states of the conversion substrate 2 and the scintillator layer 5 can be determined based on the plurality of second data signals. As described above, in the first embodiment, a method for manufacturing the conversion substrate 2 and the X-ray detection panel PNL that is excellent in quality and has a high manufacturing yield can be obtained.

[0094] (Modification 1 of the first embodiment) Next, a description will be given of the configuration of the X-ray detector 1 according to Modification 1 of the first embodiment. The X-ray detector 1 is configured similarly to the first embodiment, except for the configuration described in Modification 1. Fig. 12 is a diagram for explaining a method for manufacturing the X-ray detection panel PNL according to Modification 1, and is a circuit diagram showing a conversion substrate having an effective area DA, a first non-effective area NDA1, and a second non-effective area NDA2.

[0095] 12, when starting to manufacture the X-ray detection panel PNL, the conversion substrate 2 of Fig. 12 may be prepared. The first bidirectional diode BD1 is located in the third extension region A2c opposite the pad 2d2, and the second bidirectional diode BD2 is located in the fourth extension region A2d opposite the pad 2d1. The peripheral wiring WL is located in the third extension region A2c and the fourth extension region A2d.

[0096] The pad 2d2 is electrically connected to the peripheral wiring WL via the signal line U and the first bidirectional diode BD1 in this order. The pad 2d1 is electrically connected to the peripheral wiring WL via the scanning line G and the second bidirectional diode BD2 in this order. As in the first modification, the first bidirectional diode BD1 may be connected to the signal line U without the pad 2d2, and the second bidirectional diode BD2 may be connected to the scanning line G without the pad 2d1. In this first modification, the same effects as those of the first embodiment can be obtained.

[0097] (Modification 2 of the first embodiment) Next, a description will be given of the configuration of the X-ray detector 1 according to Modification 2 of the first embodiment. The X-ray detector 1 has the same configuration as that of the first embodiment, except for the configuration described in Modification 2. Fig. 13 is a diagram for explaining a method for manufacturing the X-ray detection panel PNL according to Modification 2, and is a circuit diagram showing a conversion substrate having an effective area DA, a first non-effective area NDA1, and a second non-effective area NDA2.

[0098] Fig. 14 is a diagram illustrating the manufacturing method of the X-ray detection panel PNL according to the present modified example 2, following Fig. 13, and shows a state in which a plurality of IC flexible substrates 60, 70 are superimposed on a plurality of pads 2d3, 2d4 of the conversion substrate 2. Fig. 15 is a cross-sectional view showing the conversion substrate 2 and the IC flexible substrate 60 of Fig. 14 along line XV-XV, and shows a state in which the bumps 61 of the IC flexible substrate 60 are abutted against the pads 2d3 of the conversion substrate 2.

[0099] As shown in Fig. 13, when starting the manufacture of the X-ray detection panel PNL, the conversion substrate 2 of Fig. 13 may be prepared. The conversion substrate 2 further has a plurality of pads 2d3 and a plurality of pads 2d4. The pad 2d4 functions as a first external pad, is provided above the base material 2a, and is located in the second non-active area NDA2. The pad 2d3 functions as a second external pad, is provided above the base material 2a, and is located in the second non-active area NDA2. The plurality of pads 2d3 are electrically connected to a plurality of scanning lines G in a one-to-one relationship, and the plurality of pads 2d4 are electrically connected to a plurality of signal lines U in a one-to-one relationship.

[0100] In this second modification, the pads 2d3 are located in the second extension region A2b and are arranged along the left side of the base material 2a, and the pads 2d4 are located in the first extension region A2a and are arranged along the bottom side of the base material 2a. The scanning line G is electrically connected to the peripheral wiring WL via the pad 2d1, the pad 2d3, and the second bidirectional diode BD2 in this order. The signal line U is electrically connected to the peripheral wiring WL via the pad 2d2, the pad 2d4, and the first bidirectional diode BD1 in this order. In the manufacturing process of the X-ray detection panel PNL, the pads 2d3 and 2d4 can be used as testing pads.

[0101] 14 and 15, after preparing the conversion substrate 2 configured as described above, a plurality of IC flexible substrates 60 are placed on a plurality of pads 2d3 of the conversion substrate 2, and a plurality of bumps 61 of the IC flexible substrate 60 are brought into one-to-one contact with the plurality of pads 2d3. Furthermore, a plurality of IC flexible substrates 70 are placed on a plurality of pads 2d4 of the conversion substrate 2, and a plurality of bumps (not shown) of the IC flexible substrate 70 are brought into one-to-one contact with the plurality of pads 2d4. Furthermore, probe needles 91 of a prober 90 are pierced into voltage adjustment pads cd.

[0102] Although the example in which bumps are brought into contact with the pads 2d3 and 2d4 and a probe needle is inserted into the voltage adjustment pad cd has been shown, it is also possible to insert a probe needle into the pads 2d3 and 2d4 or to bring a bump into contact with the voltage adjustment pad cd. It is not necessary to bring all the bumps 61 into contact with all the pads 2d3. In this case, the pads 2d3 to which the bumps 61 are to be brought into contact may be changed in a time-division manner.

[0103] The scanning signal S1 is applied to the pads 2d3, the data signals are read from the pads 2d4, and the voltage applied from the probe needle 91 to the voltage adjustment pad cd is adjusted to bring the first bidirectional diodes BD1 and the second bidirectional diodes BD2 into a non-conductive state (electrically insulated state) during periods other than the determination period for determining the state of the conversion substrate 2. The pixels PX, the scanning lines G, and the signal lines U can be protected from unwanted static electricity that may be input from the second non-active area NDA2 of the conversion substrate 2.

[0104] Subsequently, during a first readout period, the voltage value applied to the voltage adjustment pad cd via the probe needle 91 is adjusted to bring the plurality of first bidirectional diodes BD1 and the plurality of second bidirectional diodes BD2 into a conductive state, the drive circuit 81a sequentially applies a first scanning signal to h scanning lines G out of the plurality of scanning lines G via h pads 2d3 out of the plurality of pads 2d3, and the detection circuit 81b reads out a plurality of first data signals from the plurality of pads 2d4 each time the first scanning signal is applied to each of the h scanning lines G.

[0105] This makes it possible to determine the state of the conversion substrate 2 based on the plurality of first data signals. As described above, in the manufacturing process of the X-ray detection panel PNL, the state of the conversion substrate 2 can be determined even if the pads 2d3 and 2d4 are used instead of the pads 2d1 and 2d2. In the second modification, the same effects as those of the first embodiment can be obtained.

[0106] (Modification 3 of the first embodiment) Next, a description will be given of the configuration of the X-ray detector 1 according to Modification 3 of the first embodiment. The X-ray detector 1 has the same configuration as that of the first embodiment, except for the configuration described in Modification 3. Fig. 16 is a diagram for explaining a method for manufacturing the X-ray detection panel PNL according to Modification 3, and is a circuit diagram showing a conversion substrate having an effective area DA, a first non-effective area NDA1, and a second non-effective area NDA2.

[0107] As shown in Fig. 16, when starting the manufacture of the X-ray detection panel PNL, the conversion substrate 2 of Fig. 16 may be prepared. Bidirectional diodes may be connected to both ends of the wiring. Specifically, the conversion substrate 2 further includes a plurality of third bidirectional diodes BD3 and a plurality of fourth bidirectional diodes BD4. The plurality of third bidirectional diodes BD3 and the plurality of fourth bidirectional diodes BD4 are provided above the base material 2a and located in the second non-effective area NDA2.

[0108] Each of the third bidirectional diodes BD3 is located in the third extension region A2c and is electrically connected between one or more corresponding signal lines U of the plurality of signal lines U and the peripheral wiring WL. Each of the fourth bidirectional diodes BD4 is located in the fourth extension region A2d and is electrically connected between one or more corresponding scanning lines G of the plurality of scanning lines G and the peripheral wiring WL. In the present third modification, the plurality of third bidirectional diodes BD3 are electrically connected to the plurality of signal lines U in a one-to-one relationship, and the plurality of fourth bidirectional diodes BD4 are electrically connected to the plurality of scanning lines G in a one-to-one relationship.

[0109] Each signal line U is electrically connected between a corresponding one of the plurality of first bidirectional diodes BD1 and a corresponding one of the plurality of third bidirectional diodes BD3. Each scanning line G is electrically connected between a corresponding one of the plurality of second bidirectional diodes BD2 and a corresponding one of the plurality of fourth bidirectional diodes BD4.

[0110] The peripheral wiring WL has a frame shape and is located in the first extension region A2a, the second extension region A2b, the third extension region A2c, and the fourth extension region A2d, and extends continuously, thereby further protecting the pixels PX, the scanning lines G, and the signal lines U from unwanted static electricity that may be input from the second non-effective area NDA2 of the conversion substrate 2. In the third modification, the same effects as those of the first embodiment can be obtained.

[0111] (Fourth modification of the first embodiment) Next, a description will be given of the configuration of the X-ray detector 1 according to Modification 4 of the first embodiment. The X-ray detector 1 is configured similarly to the first embodiment, except for the configuration described in Modification 4. Fig. 17 is a diagram for explaining a method for manufacturing the X-ray detection panel PNL according to Modification 4, and is a circuit diagram showing a conversion substrate having an effective area DA, a first non-effective area NDA1, and a second non-effective area NDA2.

[0112] As shown in Fig. 17, when starting the manufacture of the X-ray detection panel PNL, the conversion substrate 2 of Fig. 17 may be prepared. The bidirectional diodes and the wirings do not have to be electrically connected one-to-one. For example, the first bidirectional diode BD1 is electrically connected to two signal lines U, and the second bidirectional diode BD2 is electrically connected to two scanning lines G. However, the first bidirectional diode BD1 may be electrically connected to three or more signal lines U, and the second bidirectional diode BD2 may be electrically connected to three or more scan lines G. In the fourth modification, the same effects as those of the first embodiment can be obtained.

[0113] (Second embodiment) Next, the configuration of an X-ray detector 1 according to a second embodiment will be described. The X-ray detector 1 has the same configuration as the X-ray detector 1 of the first embodiment described above, except for the configuration described in this second embodiment. The X-ray detector 1 of the second embodiment is a direct conversion type X-ray detector. The method for manufacturing the conversion substrate 2 and the X-ray detection panel PNL according to the first embodiment described above is also applicable to the method for manufacturing the conversion substrate 2 and the X-ray detection panel PNL of the direct conversion type X-ray detector 1. FIG. 18 is a circuit diagram showing a part of the conversion substrate 2 of the X-ray detector 1 according to the second embodiment. FIG. 19 is an enlarged cross-sectional view showing a part of the conversion substrate 2 shown in FIG. 18.

[0114] 18 and 19, the X-ray detector 1 does not include a TFD 15a, a scintillator layer 5, a light-reflecting layer 6, a moisture-proof cover 7, or a power supply PS1. The X-ray detector 1 further includes an X-ray conversion layer 26, which is a radiation conversion layer, a plurality of capacitors 17, a bias electrode layer 27, a power supply PS3, an insulating layer 28, and an X-ray grid 29 as an X-ray shielding portion (radiation shielding portion).

[0115] Each capacitor 17 is electrically connected to one of a plurality of conductive layers (pixel electrodes) CL. The capacitor 17 has a lower electrode 17a formed on the substrate 2a and an upper electrode 17b formed on the insulating layer 14 and facing the lower electrode 17a. The upper electrode 17b is electrically connected to the drain electrode DE of the TFT 13a. An insulating layer 18 is formed on the insulating layer 14, the semiconductor layer SC, the upper electrode 17b, the source electrode SE, and the drain electrode DE. The conductive layer CL is formed on the insulating layer 18 and is electrically connected to the drain electrode DE.

[0116] The X-ray conversion layer 26 is in contact with the plurality of conductive layers CL of the plurality of pixels PX, and can convert incident X-rays into charges of a magnitude corresponding to the intensity of the X-rays. The bias electrode layer 27 is formed on the X-ray conversion layer 26. The bias electrode layer 27 is formed so as to be able to apply a predetermined bias voltage to the X-ray conversion layer 26. The insulating layer 28 is formed on the bias electrode layer 27. The X-ray grid 29 is formed on the insulating layer 28. The X-ray grid 29 overlaps between the conductive layers CL. Therefore, the X-ray grid 29 has the function of blocking X-rays incident from pixels PX adjacent to the pixel PX, and can suppress a decrease in resolution characteristics due to scattered X-rays.

[0117] The power supply PS3 is electrically connected to the bias electrode layer 27. In each pixel PX, the first conversion unit 2b is a portion of the X-ray conversion layer 26 that overlaps with the conductive layer CL. The direct conversion type X-ray detector 1 is configured as described above.

[0118] Next, an X-ray imaging method using the X-ray detector 1 will be described. X-rays are irradiated onto the X-ray conversion layer 26 of the conversion substrate 2 by passing through the subject, etc. As a result, charges 26a generated in the X-ray conversion layer 26 move to the conductive layer CL of any pixel PX due to an electric field oriented by the bias voltage applied to the bias electrode layer 27. Note that in FIG. 19, electrons e are shown moving toward the bias electrode layer 27, and holes h are shown moving toward the conductive layer CL. The charges 26a that have moved to the conductive layer CL are stored in the capacitor 17 via the drain electrode DE of the TFT 13a.

[0119] Next, a scanning signal S1 for switching the TFT 13a between an ON state and an OFF state is input to the scanning line G. Here, the scanning signal S1 is output from the above-mentioned drive circuit 11a. When the TFT 13a is turned ON by the scanning signal S1, the charge accumulated in the capacitor 17 of each pixel PX is output to the signal line U as an image data signal S2, which is a charge signal, and the image data signal S2 is transmitted to the detection circuit 11b and the image transmission unit 4.

[0120] In the second embodiment, the same effects as in the first embodiment can be obtained. In the second embodiment, a method for manufacturing the conversion substrate 2 and the X-ray detection panel PNL that is excellent in quality and has a high manufacturing yield can be obtained.

[0121] Although several embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be embodied in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included within the scope and spirit of the invention, and are also included in the scope of the invention and its equivalents as defined in the claims.

[0122] For example, the above-described technology is not limited to application to the conversion substrate 2, the X-ray detection panel PNL, the X-ray detection module 10, and the X-ray detector 1, but can be applied to various semiconductor substrates, various radiation detection panels such as other X-ray detection panels, various radiation detection modules such as other X-ray detection modules, and various radiation detectors such as other X-ray detectors. The radiation detector may include a radiation detection panel that detects radiation instead of the X-ray detection panel PNL. [Explanation of symbols]

[0123] 1...X-ray detector, 10...X-ray detection module, PNL...X-ray detection panel, 2...conversion board, 2a...substrate, 5...scintillator layer, 7...moisture-proof cover, 8...junction, 11...circuit board, 11a...drive circuit, 11b...detection circuit, 13a...TFT, 15a...TFD, 17...capacitor, 26...X-ray conversion layer, 27...bias electrode layer, BL1...bias line, CL...conductive layer, G...scanning line, U...signal line, PX...pixel, 2d1, 2d2, 2d3, 2d4...pad, cd...voltage adjustment pad, BD1...first bidirectional diode, BD2...second bidirectional diode, BD3...third bidirectional diode, BD4...fourth bidirectional diode, WL...peripheral wiring, 60, 70...IC flexible substrate, 61...bump, 81a...drive circuit, 81b...detection circuit, 90...prober, 91...probe needle, S1...scanning signal, S2...image data signal, DA...effective area (detection area), NDA1...first non-effective area, NDA2...second non-effective area, A2a...first extension area, A2b...second extension area, A2c...third extension area, A2d...fourth extension area, X...row direction, Y...column direction.

Claims

1. a substrate positioned in an effective area, a frame-shaped first ineffective area surrounding the effective area, and a frame-shaped second ineffective area surrounding the first ineffective area; a plurality of scanning lines disposed above the substrate and extending through the active area; a plurality of signal lines provided above the substrate, extending through the effective area and intersecting the plurality of scanning lines; a plurality of pixels provided above the substrate and positioned in the effective region, each of the pixels having a switching element electrically connected to a corresponding one of the plurality of scanning lines and a corresponding one of the plurality of signal lines, and a pixel electrode electrically connected to the switching element; a plurality of first internal pads provided above the substrate, located in the first non-effective region, and electrically connected to the plurality of signal lines in a one-to-one relationship; a plurality of second internal pads provided above the substrate, positioned in the first non-effective area, and electrically connected to the plurality of scan lines in a one-to-one relationship; peripheral wiring provided above the base material, positioned in the second non-effective region, and electrically connected to the plurality of signal lines and the plurality of scanning lines; a plurality of first bidirectional diodes provided above the base material and positioned in the second non-effective region, each of the first bidirectional diodes being electrically connected between one or more corresponding signal lines among the plurality of signal lines and the peripheral wiring; a plurality of second bidirectional diodes provided above the base material and positioned in the second non-effective region, each of the second bidirectional diodes being electrically connected between a corresponding one or more of the plurality of scanning lines and the peripheral wiring; a voltage adjustment pad provided above the base material, located in the second non-effective area, and electrically connected to the peripheral wiring; Semiconductor substrate.

2. each of the signal lines is electrically connected to the peripheral wiring via a corresponding one of the plurality of first internal pads and a corresponding one of the plurality of first bidirectional diodes, in this order; each of the scanning lines is electrically connected to the peripheral wiring via a corresponding one of the plurality of second internal pads and a corresponding one of the plurality of second bidirectional diodes, in this order; The semiconductor substrate according to claim 1 .

3. a plurality of first external pads provided above the substrate, located in the second inactive area, and electrically connected to the plurality of signal lines in a one-to-one relationship; a plurality of second external pads provided above the base, located in the second inactive area, and electrically connected to the plurality of scan lines in a one-to-one relationship; The semiconductor substrate according to claim 1 .

4. the second non-effective area has a first extending area extending in a first direction in which the plurality of scanning lines extend, and a second extending area extending in a second direction in which the plurality of signal lines extend, the plurality of first bidirectional diodes are located in the first extension region; the plurality of second bidirectional diodes are located in the second extension region; the peripheral wiring is located in the first extension region and the second extension region; The semiconductor substrate according to claim 1 .

5. a plurality of third bidirectional diodes provided above the base material and positioned in the second non-effective region, each of the third bidirectional diodes being electrically connected between a corresponding one or more of the plurality of signal lines and the peripheral wiring; a plurality of fourth bidirectional diodes provided above the base material and positioned in the second non-effective region, each of the fourth bidirectional diodes being electrically connected between a corresponding one or more of the plurality of scanning lines and the peripheral wiring; each of the signal lines is electrically connected between a corresponding one of the plurality of first bidirectional diodes and a corresponding one of the plurality of third bidirectional diodes; each of the scanning lines is electrically connected between a corresponding one of the plurality of second bidirectional diodes and a corresponding one of the plurality of fourth bidirectional diodes; The semiconductor substrate according to claim 1 .

6. the second non-effective area includes a first extending area extending in a first direction which is a direction in which the plurality of scanning lines extend, a second extending area extending in a second direction which is a direction in which the plurality of signal lines extend, a third extending area extending in the first direction and sandwiching the effective area in the second direction together with the first extending area, and a fourth extending area extending in the second direction and sandwiching the effective area in the first direction together with the second extending area, the plurality of first bidirectional diodes are located in the first extension region; the plurality of second bidirectional diodes are located in the second extension region; the plurality of third bidirectional diodes are located in the third extension region; the plurality of fourth bidirectional diodes are located in the fourth extension region; the peripheral wiring is located in the first extension region, the second extension region, the third extension region, and the fourth extension region; The semiconductor substrate according to claim 5 .

7. a substrate located in an effective area, a frame-shaped first non-effective area surrounding the effective area, and a frame-shaped second non-effective area surrounding the first non-effective area; a plurality of scanning lines provided above the substrate and extending through the effective area; a plurality of signal lines provided above the substrate and extending through the effective area and intersecting the plurality of scanning lines; a plurality of pixels provided above the substrate and located in the effective area, each pixel having a switching element electrically connected to a corresponding one of the plurality of scanning lines and a corresponding one of the plurality of signal lines, and a pixel electrode electrically connected to the switching element; a plurality of first internal pads provided above the substrate, located in the first non-effective area, and electrically connected to the plurality of signal lines in a one-to-one relationship; a plurality of second internal pads disposed above the substrate in the second non-effective area, peripheral wiring disposed above the substrate, located in the second non-effective area, and electrically connected to the plurality of signal lines and the plurality of scanning lines; a plurality of first bidirectional diodes disposed above the substrate and located in the second non-effective area, each of the first bidirectional diodes electrically connected between a corresponding one or more of the plurality of signal lines and the peripheral wiring; a plurality of second bidirectional diodes disposed above the substrate and located in the second non-effective area, each of the second bidirectional diodes electrically connected between a corresponding one or more of the plurality of scanning lines and the peripheral wiring; and a voltage adjustment pad disposed above the substrate, located in the second non-effective area, and electrically connected to the peripheral wiring; In the first read period, adjusting a voltage value applied to the voltage adjustment pad to bring the plurality of first bidirectional diodes and the plurality of second bidirectional diodes into a conductive state; sequentially applying a first scanning signal to h scanning lines among the plurality of scanning lines via h second internal pads among the plurality of second internal pads; reading out a plurality of first data signals from the plurality of first internal pads each time the first scan signal is applied to each of the h scan lines; determining a state of the semiconductor substrate based on the plurality of first data signals; A method for manufacturing a radiation detection panel.

8. When preparing the semiconductor substrate, each of the pixels further includes a photoelectric conversion element electrically connected to the pixel electrode, which converts incident visible light into an electric charge having a magnitude corresponding to the intensity of the visible light; During a first accumulation period prior to the first readout period, adjusting a voltage value applied to the voltage adjustment pad to bring the plurality of first bidirectional diodes and the plurality of second bidirectional diodes into a conductive state; irradiating the effective area of ​​the semiconductor substrate with visible light to accumulate charges in the photoelectric conversion elements; The method for manufacturing the radiation detection panel according to claim 7 .

9. If the state of the semiconductor substrate is determined to be normal based on a plurality of first data signals read from all first internal pads by sequentially applying the first scan signal to all scan lines, forming a scintillator layer on the effective area of ​​the semiconductor substrate, the scintillator layer converting incident radiation into visible light; Next, a moisture-proof cover is bonded to the first ineffective region of the semiconductor substrate with a bonded body, and the semiconductor substrate, the moisture-proof cover, and the bonded body cover the scintillator layer; Subsequently, in the second accumulation period, adjusting a voltage value applied to the voltage adjustment pad to bring the plurality of first bidirectional diodes and the plurality of second bidirectional diodes into a conductive state; irradiating the scintillator layer with radiation to accumulate charges in the photoelectric conversion elements; In a second readout period after the second accumulation period, adjusting a voltage value applied to the voltage adjustment pad to bring the plurality of first bidirectional diodes and the plurality of second bidirectional diodes into a conductive state; sequentially applying second scanning signals to the i scanning lines among the plurality of scanning lines via the i second internal pads among the plurality of second internal pads; reading out a plurality of second data signals from the plurality of first internal pads each time the second scan signal is applied to each of the i scan lines; determining a state of the semiconductor substrate and the scintillator layer based on the plurality of second data signals; The method for manufacturing the radiation detection panel according to claim 8 .

10. applying the second scanning signal to all scanning lines in sequence and determining that the state of the semiconductor substrate is normal based on a plurality of second data signals read out from all first internal pads, removing the second non-effective region of the semiconductor substrate to form a radiation detection panel including the semiconductor substrate, the scintillator layer, and the moisture-proof cover. The method for manufacturing the radiation detection panel according to claim 9 .

11. During a period other than a determination period in which a scanning signal is applied to the second internal pads, a plurality of data signals are read from the first internal pads, and a state of the semiconductor substrate is determined, adjusting a voltage value applied to the voltage adjustment pad to bring the plurality of first bidirectional diodes and the plurality of second bidirectional diodes into a non-conductive state; The method for manufacturing the radiation detection panel according to claim 7 .

12. a substrate located in an effective area, a frame-shaped first non-effective area surrounding the effective area, and a frame-shaped second non-effective area surrounding the first non-effective area; a plurality of scanning lines provided above the substrate and extending through the effective area; a plurality of signal lines provided above the substrate and extending through the effective area and intersecting the plurality of scanning lines; a plurality of pixels provided above the substrate and located in the effective area, each pixel having a switching element electrically connected to a corresponding one of the plurality of scanning lines and a corresponding one of the plurality of signal lines, and a pixel electrode electrically connected to the switching element; a plurality of first internal pads provided above the substrate, located in the first non-effective area, and electrically connected to the plurality of signal lines in a one-to-one relationship; a plurality of second internal pads provided above the substrate, located in the first non-effective area, and electrically connected to the plurality of scanning lines in a one-to-one relationship; a plurality of second bidirectional diodes provided above the substrate and located in the second non-effective area, each of the second bidirectional diodes being electrically connected between a corresponding one or more of the plurality of scanning lines and the peripheral wiring; a voltage adjustment pad provided above the substrate, located in the second non-effective area, and electrically connected to the peripheral wiring; a plurality of first external pads provided above the substrate, located in the second non-effective area, and electrically connected to the plurality of signal lines in a one-to-one relationship; and a plurality of second external pads provided above the substrate, located in the second non-effective area, and electrically connected to the plurality of scanning lines in a one-to-one relationship; In the first read period, adjusting a voltage value applied to the voltage adjustment pad to bring the plurality of first bidirectional diodes and the plurality of second bidirectional diodes into a conductive state; sequentially applying first scan signals to h scan lines among the plurality of scan lines via h second external pads among the plurality of second external pads; reading out a plurality of first data signals from the plurality of first external pads each time the first scan signal is applied to each of the h scan lines; determining a state of the semiconductor substrate based on the plurality of first data signals; A method for manufacturing a radiation detection panel.

13. When preparing the semiconductor substrate, each of the pixels further includes a photoelectric conversion element electrically connected to the pixel electrode, which converts incident visible light into an electric charge having a magnitude corresponding to the intensity of the visible light; During a first accumulation period prior to the first readout period, adjusting a voltage value applied to the voltage adjustment pad to bring the plurality of first bidirectional diodes and the plurality of second bidirectional diodes into a conductive state; irradiating the effective area of ​​the semiconductor substrate with visible light to accumulate charges in the photoelectric conversion elements; The method for manufacturing the radiation detection panel according to claim 12 .

14. If the state of the semiconductor substrate is determined to be normal based on a plurality of first data signals read out from all first external pads by sequentially applying the first scan signal to all scan lines, forming a scintillator layer on the effective area of ​​the semiconductor substrate, the scintillator layer converting incident radiation into visible light; Next, a moisture-proof cover is bonded to the first ineffective region of the semiconductor substrate with a bonded body, and the semiconductor substrate, the moisture-proof cover, and the bonded body cover the scintillator layer; Subsequently, in the second accumulation period, adjusting a voltage value applied to the voltage adjustment pad to bring the plurality of first bidirectional diodes and the plurality of second bidirectional diodes into a conductive state; irradiating the scintillator layer with radiation to accumulate charges in the photoelectric conversion elements; In a second readout period after the second accumulation period, adjusting a voltage value applied to the voltage adjustment pad to bring the plurality of first bidirectional diodes and the plurality of second bidirectional diodes into a conductive state; sequentially applying second scan signals to the i scan lines among the plurality of scan lines via the i second external pads among the plurality of second external pads; reading out a plurality of second data signals from the plurality of first external pads each time the second scan signal is applied to each of the i scan lines; determining a state of the semiconductor substrate and the scintillator layer based on the plurality of second data signals; The method for manufacturing the radiation detection panel according to claim 13 .

15. applying the second scanning signal to all scanning lines in sequence and determining that the state of the semiconductor substrate is normal based on a plurality of second data signals read out from all first external pads, removing the second non-effective region of the semiconductor substrate to form a radiation detection panel including the semiconductor substrate, the scintillator layer, and the moisture-proof cover. The method for manufacturing the radiation detection panel according to claim 14 .

16. During a period other than a determination period in which a scan signal is applied to the second external pads, a plurality of data signals are read from the first external pads, and a state of the semiconductor substrate is determined, adjusting a voltage value applied to the voltage adjustment pad to bring the plurality of first bidirectional diodes and the plurality of second bidirectional diodes into a non-conductive state; The method for manufacturing the radiation detection panel according to claim 12 .

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