Multi-zone lamp heating and temperature monitoring in epitaxy processing chamber

Abstract

To provide an epitaxial deposition chamber that improves a temperature control within an epitaxial processing chamber.SOLUTION: An epitaxial chamber 100 has a chamber body assembly 106. The chamber body assembly includes a lower window 120 and an upper window 122, and the chamber body assembly, the lower window, and the upper window surround an interior space 110. A susceptor assembly 124 is disposed within the interior space. The epitaxial chamber also has a plurality of temperature control elements 199. A plurality of temperature control elements include an upper lamp module 102, a lower lamp module 104, an upper heater 158, a lower heater 152, and a heated gas passage 136.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] FIELD OF THE DISCLOSURE Embodiments of the present disclosure generally relate to apparatus and methods for fabricating semiconductor substrates. More specifically, the apparatus disclosed herein relates to an epitaxial deposition chamber having multiple temperature control elements. [Background technology]

[0002] Semiconductor substrates are processed for a variety of applications, including the fabrication of integrated and microdevices. One such processing equipment is an epitaxial processing chamber. During processing, the substrate is placed on a susceptor within the epitaxial processing chamber. The susceptor is supported by a support shaft that is rotatable about a central axis. Precise control of heat sources, such as multiple heat lamps positioned above and below the substrate, allows the substrate to be heated within very tight tolerances. The temperature of the substrate can affect the uniformity of the material deposited on the substrate.

[0003] The ability to accurately control substrate temperature in an epitaxial processing chamber has a significant impact on throughput and production yield. Conventional epitaxial processing chambers have struggled to meet the increasing demand for improved production yields and faster throughput while meeting the temperature control standards required for the manufacture of next-generation devices.

[0004] Therefore, there is a need for improved temperature control within epitaxial processing chambers. Summary of the Invention

[0005] The present disclosure generally relates to a processing chamber for processing semiconductor substrates having multiple temperature control elements. In one example, an epitaxial chamber has a chamber body assembly. The chamber body assembly includes a lower window and an upper window, and the chamber body assembly, the lower window, and the upper window surround an interior space. A susceptor assembly is disposed within the interior space. The epitaxial chamber also has multiple temperature control elements. The multiple temperature control elements include two or more temperature control elements selected from the group consisting of an upper lamp module, a lower lamp module, an upper heater, a lower heater, or a heating gas passage.

[0006] So that the above-described features of the present disclosure can be understood in detail, a more particular description of the present disclosure, briefly summarized above, can be had by reference to embodiments, some of which are illustrated in the accompanying drawings. It should be noted, however, that the accompanying drawings illustrate only exemplary embodiments and, therefore, should not be considered as limiting the scope of the present disclosure, as other equally effective embodiments may also be permitted. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a schematic diagram of a processing chamber according to an embodiment of the present disclosure. [Figure 2A] FIG. 1 is a schematic bottom view of an upper lamp assembly according to an embodiment of the present disclosure. [Figure 2B] 2B is a schematic plan view of the upper lamp module of FIG. 2A according to an embodiment of the present disclosure. [Figure 2C] 2C is a schematic cross-sectional view of the upper lamp module of FIG. 2A taken along section line 2C-2C, according to an embodiment of the present disclosure. [Figure 3A] FIG. 2 is a schematic bottom view of a lower lamp module according to an embodiment of the present disclosure. [Figure 3B] FIG. 3B is a schematic plan view of the lower lamp module of FIG. 3A according to an embodiment of the present disclosure. [Figure 3C]3C is a schematic cross-sectional view of an upper lamp module taken along section line 3C-3C of FIG. 3A, according to an embodiment of the present disclosure. [Figure 4A] 1A and 1B are schematic cross-sectional views of an upper heater and a lower heater according to an embodiment of the present disclosure. [Figure 4B] FIG. 4B is a schematic isometric view of the heater shown in FIG. 4A according to an embodiment of the present disclosure. [Figure 5A] FIG. 10 is a schematic cross-sectional view of another embodiment of a lower heater in accordance with an embodiment of the present disclosure. [Figure 5B] 5B is a schematic isometric view illustrating an additional example of the lower heater 152 of FIG. 5A. FIG. [Figure 6A] FIG. 1 is a schematic diagram of an optical filter according to one embodiment. [Figure 6B] 10 is a schematic diagram of an optical filter according to another embodiment. [Figure 7A] FIG. 1 is a schematic diagram of a dome heater. [Figure 7B] 2 is a schematic cross-sectional view of a heating gas passage in an upper lamp module. FIG. DETAILED DESCRIPTION OF THE INVENTION

[0008] For ease of understanding, where possible, the same reference numerals have been used to designate identical elements that are common to multiple figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation.

[0009] The present disclosure generally relates to an apparatus for semiconductor processing having multiple temperature control elements. More specifically, the apparatus disclosed herein relates to a processing chamber and components thereof. The processing chamber is configured as a thermal deposition chamber, such as an epitaxial deposition chamber. The processing chamber has less expensive components than conventional chambers, thereby reducing the cost of replacing portions of the processing chamber after they wear out or when an improved design is implemented for a portion of the chamber body. The disclosed processing chamber overcomes conventional challenges, including improving uniform thermal control in the processing chamber, which results in better throughput and increased process yield.

[0010] Also disclosed herein are processing chamber components that enable improved temperature control. The components that enable improved temperature control include an upper lamp module, a lower lamp module, and one or more heating elements. Each of the above temperature control-improving processing chamber components can be utilized individually or in conjunction with one or more other temperature control-improving chamber components to control the temperature of the processing chamber during processing of substrates by epitaxial deposition, which can have a substantial beneficial impact on the quality of the epitaxially deposited film and processing throughput.

[0011] 1 is a schematic diagram of an epitaxial chamber 100 according to an embodiment of the present disclosure. The epitaxial chamber 100 is an epitaxial deposition chamber that can be used as part of a cluster tool (not shown). The epitaxial chamber 100 is utilized to deposit an epitaxial film on a substrate, such as substrate 150.

[0012] The epitaxial chamber 100 includes a plurality of temperature control elements 199, a chamber body assembly 106, a susceptor assembly 124, a lower window 120, and an upper window 122. The upper window 122, the chamber body assembly 106, and the lower window 120 surround an interior space 110 of the epitaxial chamber 100. The plurality of temperature control elements 199 include a lamp module 101, an upper heater 158, a lower heater 152, and a heating gas passage 136. Each of the plurality of temperature control elements 199 can be utilized individually or in conjunction with one or more of the other plurality of temperature control elements 199 to control the temperature of the epitaxial chamber 100 during processing of the substrate 150. The lamp module 101 includes an upper lamp module 102 and a lower lamp module 104.

[0013] A susceptor assembly 124 is disposed within the interior space 110 and is configured to support a substrate 150 on a substrate support surface 151. The susceptor assembly 124 is disposed between the upper lamp module 102 and the lower lamp module 104. A lower window 120 is disposed between the susceptor assembly 124 and the lower lamp module 104. An upper window 122 is disposed between the susceptor assembly 124 and the upper lamp module 102.

[0014] The upper lamp module 102 is disposed above the susceptor assembly 124 and is configured to heat a substrate, such as a substrate 150, disposed on the susceptor assembly 124. The upper lamp module 102 includes an upper module body 126 and a plurality of lamp openings 128 disposed therethrough. Each of the plurality of lamp openings 128 includes a lamp base 129, or socket, in which one lamp 130 is disposed. The orientation of the lamp 130 is generally defined by an imaginary line extending along the filament of the lamp 130 to the tip of the lamp 130. For example, a lamp 130 placed horizontally on a surface has the imaginary line aligned with the filament and parallel to the surface. The orientation of the lamp 130 is also perpendicular to a chamber centerline 'A', which extends vertically through the center of the upper lamp module. Each of the lamps 130 is coupled to one of the lamp bases 129. Each of the lamp bases 129 supports one of the lamps 130 and electrically connects each lamp 130 to a power source (not shown). Each of the lamps 129 is fixed within the opening 128.

[0015] The upper lamp module 102 further includes a heating gas passage 136 and a pyrometer passage 138. The heating gas passage 136 is fluidly coupled to the heating gas source 132. The heating gas passage 136 extends from the top to the bottom of the upper module body 126. The heating gas passage 136 is configured to allow heated gas, such as heated air or heated inert gas, to flow from the heating gas source 132 to the top surface of the upper window 122 to convectively heat the upper window 122. Heating the upper window 122 ensures that much of the energy of the lamps 130 is directed toward the substrate 150 rather than toward heating the upper window 122.

[0016] The heated gas passage will be further described with reference to FIGS. 7A and 7B. FIG. 7A is a schematic diagram of a dome heater 750. FIG. 7B is a schematic cross-sectional view of the heated gas passage 136 in the upper lamp module 102. The heated gas passage 136 has an inlet 736. Heated gas is supplied via the heated gas passage 136 to an upper plenum 180 defined between the upper lamp module 102 and the upper window 122. The heated gas passage 136 may be disposed in the center of the upper lamp module 102. The heated gas passage 136 may have a conical shape. Alternatively, the heated gas passage 136 may have a frustoconical shape to promote outward flow into the upper plenum 180. Alternatively, the heated gas passage 136 may have more than one radially arranged passage, as shown by alternative heated gas passage 730. The alternative heated gas passage 730 includes a first passage 782, a second passage 784, and a third passage 186 for evenly distributing the heated gas. In this manner, better temperature uniformity can be maintained at the upper window 122, which advantageously reduces fluctuations in processing temperature.

[0017] A dome heater 750 is connected to the inlet 736 of the gas passage 136. The dome heater 750 may be an electric resistance heater, a ceramic heater, a radiant heater, or other suitable heater and includes a fan for generating and moving hot air. The dome heater 750 can generate an air outlet temperature of approximately 1,652°F into the gas passage 136. The dome heater 750 can have a heated airflow of a minimum of approximately 4 CFM to a maximum of approximately 16 CFM. The dome heater 750 is connected to a controller 752. Using feedback from the sensors, the controller 752 can regulate the heat from the dome heater 750 to maintain the temperature of the upper lamp module 102 and the upper window 122. For example, the controller 752 can control the heater and / or fan of the dome heater 750 to provide hot air in response to the temperature of the upper lamp module being below a threshold. Conversely, the controller 752 may control the heater and / or fan of the dome heater 750 to reduce or stop the supply of hot air in response to the temperature of the upper lamp module being above a threshold.

[0018] Dome heater 750 advantageously heats upper window 122 to clean it from parasitic deposition, which can form a coating that can adversely affect lamp heating of the substrate. However, it should be understood that dome heater 750 and gas passage 136 can also be implemented for lower window 120. It is envisioned that lower window 122 can utilize similar apparatus and methods for heating as previously disclosed.

[0019] 1 , a heated gas exhaust passage 142 is also disposed through the upper module body 126. The heated gas exhaust passage 142 is coupled to a heated exhaust pump 140. The heated exhaust pump 140 removes gases from the upper plenum 180 through the heated gas exhaust passage 142. The heated exhaust pump 140 also functions as an exhaust pump for the processing space. In some embodiments, the heated gas exhaust passage 142 may be a groove or channel formed along the edge of the upper module body 126, or may be formed through a separate chamber component in fluid communication with the upper plenum 180.

[0020] A pyrometer passage 138 is disposed through the upper module body 126 to allow a pyrometer 134, such as a scanning pyrometer, to measure the temperature of the substrate 150. The pyrometer 134 may also be used to measure the temperature of the chamber walls, liners, etc. The pyrometer 134 is disposed on the upper module body 126 adjacent to the pyrometer passage 138. The pyrometer passage 138 extends from the top surface of the upper module body 126 to the bottom surface of the upper module body 126 near the upper window 122.

[0021] The lower lamp module 104 is disposed below the susceptor assembly 124 and is configured to heat the bottom surface of the substrate 150 when the substrate is placed on the susceptor assembly 124. The lower lamp module 104 includes a lower module body 182. A plurality of lamp openings 186 are disposed through the lower module body 182. A lamp 188 is disposed within each of the plurality of lamp openings 186. Each lamp 188 is coupled to a lamp base 184. Each lamp base 184 supports a corresponding one of the lamps 188 and electrically connects each lamp 188 to a power supply (not shown). The orientation of the lamps 188 is generally perpendicular to the vertical centerline of the epitaxial chamber 100. For example, the orientation of the lamps 188 is generally defined by an imaginary line extending through the filament to the tip of the lamp 188. The lamps 188 may be disposed in a generally perpendicular orientation with respect to the substrate 150.

[0022] The lower lamp module 104 further includes a susceptor shaft passage 195 and a pyrometer passage 192. The susceptor shaft passage 195 is disposed through the center of the lower module body 182. A support shaft is disposed through the susceptor shaft passage 195 and is coupled to the susceptor 124. The susceptor shaft passage 195 is configured to allow the support shaft of the susceptor 124 to pass through the lower module body 182.

[0023] A pyrometer passage 192 is disposed through the lower module body 182 to enable a pyrometer 190, such as a scanning pyrometer, to measure the temperature of the bottom surface of the substrate 150 or the bottom surface of the substrate support. The pyrometer 190 is disposed beneath the lower module body 182 adjacent to and aligned with the pyrometer passage 192. The pyrometer passage 192 is disposed from the bottom surface of the lower module body 182 to the top surface of the lower module body 182 near the lower window 120.

[0024] The chamber body assembly 106 includes an injection ring 116 and a base ring 114. The injection ring 116 is disposed on the base ring 114. The injection ring 116 has one or more gas injectors 108 disposed therethrough. The base ring 114 includes a substrate transfer passage 162, one or more upper chamber exhaust passages, and a lower chamber exhaust passage 164. The substrate transfer passage 162 is disposed through the base ring 114 opposite the one or more upper chamber exhaust passages and the lower chamber exhaust passage 164. Each of the one or more upper chamber exhaust passages is disposed through the base ring 114 and is coupled to an exhaust module. The lower chamber exhaust passage 164 also is disposed through the base ring 114.

[0025] The upper chamber 111 is the portion of the interior space 110 where the substrate 150 is processed and where process gases are injected via the gas injectors 108. The lower chamber 113 is the portion of the interior space 110 where the substrate 150 is loaded onto the susceptor assembly 124. The upper chamber 111 can be described as the space above the susceptor support surface 151 of the susceptor assembly 124 while the susceptor assembly 124 is in the processing position. The lower chamber 113 is the space below the susceptor support surface 151 of the susceptor assembly 124 while the susceptor assembly 124 is in the processing position. The processing position (not shown) is where the substrate 150 is positioned on or above the horizontal reference plane 125. The horizontal reference plane 125 is the plane where the injection ring 116 and the base ring 114 contact each other. The horizontal reference plane 125 is perpendicular to the vertical centerline of the epitaxial chamber 100 .

[0026] The one or more upper and lower chamber exhaust passages 164 are coupled to one or more exhaust pumps (not shown). The one or more exhaust pumps are configured to remove exhaust gases from the interior volume 110 via the one or more upper and lower chamber exhaust passages 164. In some embodiments, each of the upper and lower chamber exhaust passages 164 is coupled to a single exhaust pump using multiple conduits. In other embodiments, the upper and lower chamber exhaust passages are coupled to a different exhaust pump than the lower chamber exhaust passage 164.

[0027] A substrate transfer passage 162 passes through the base ring 114. The substrate transfer passage 162 is configured to allow a substrate to pass therethrough from a transfer chamber of a cluster tool (not shown). A flange 168 is attached to one end of the base ring 114 to allow the epitaxial chamber 100 to be attached to a cluster tool (not shown). The substrate transfer passage 162 passes through the flange 168.

[0028] An upper cooling ring 118 and a lower cooling ring 112 are disposed on opposite sides of the chamber body assembly 106. The upper cooling ring 118 is disposed above the injection ring 116 and is configured to cool the injection ring 116. The lower cooling ring 112 is disposed below the base ring 114 and is configured to cool the base ring 114. The upper cooling ring 118 has coolant passages 146 disposed therein. The coolant circulating through the coolant passages 146 may include water, oil, or other suitable heat transfer fluid. The lower cooling ring 112 has coolant passages 148 disposed therein. The coolant circulating through the coolant passages 148 is similar to the coolant circulating through the coolant passages 146 of the upper cooling ring 118. In some embodiments, the upper cooling ring 118 and the lower cooling ring 112 help secure the injection ring 116 and the base ring 114 within the epitaxial chamber 100. The upper cooling ring 118 may partially support the upper lamp module 102 , and the lower cooling ring 112 may partially support the base ring 114 and the injection ring 116 .

[0029] Using the upper cooling ring 118 and the lower cooling ring 112, the temperature is engineered to cool the O-ring or vacuum seal area to below 250° C. This extends the life of the O-ring to maintain a good vacuum seal and reduces maintenance downtime.

[0030] The gas injectors 108 of the injection ring 116 are positioned through openings formed through the injection ring 116. In the example shown in FIG. 1 , multiple gas injectors 108 are positioned through the injection ring 116. Each gas injector 108 is configured to supply process gas to the interior space 110 through one or more gas outlets 178. For ease of discussion, only one gas injector 108 is shown in FIG. 1 . The gas injector 108 is shown as being positioned at an acute angle with respect to the horizontal plane, with the one or more gas outlets 178 pointing downward toward the susceptor 124 and substrate 150 below the gas injector 108. Each of the gas injectors 108 is fluidly coupled to one or more process gas sources, such as a first process gas source 174 or a second process gas source 176. In some embodiments, only the first process gas source 174 is utilized. In some embodiments where both a first process gas source 174 and a second process gas source 176 are utilized, there are two gas outlets 178 within each gas injector 108. The two gas outlets 178 are formed within a single gas injector 108 and are arranged in a stacked configuration such that the gases can only mix after they exit the gas injector 108 through the gas outlets 178 and enter the interior space 110.

[0031] The upper window 122 is disposed between the injection ring 116 and the upper lamp module 102. The upper window 122 is an optically transparent window that allows radiant energy generated by the upper lamp module 102 to pass therethrough. In some embodiments, the upper window 122 is formed from quartz or a glass material. The upper window 122 is dome-shaped and, in some embodiments, is also referred to as an upper dome. The outer edge of the upper window 122 forms a peripheral support 172. The peripheral support 172 is thicker than the central portion of the upper window 122. The peripheral support 172 is disposed above the injection ring 116. The peripheral support 172 is connected to the central portion of the upper window 122 and is formed from the optically transparent material of the central portion of the upper window 122.

[0032] The lower window 120 is disposed between the base ring 114 and the lower lamp module 104. The lower window 120 is an optically transparent window that allows radiant energy generated by the lower lamp module 104 to pass through it. In some embodiments, the lower window 120 is formed from a quartz or glass material. The lower window 120 is dome-shaped and, in some embodiments, is also referred to as a lower dome. The outer edge of the lower window 120 forms a peripheral support 170. The peripheral support 170 is thicker than a central portion of the lower window 120. The peripheral support 170 is connected to the central portion of the lower window 120 and is formed from the same optically transparent material.

[0033] Various liners and heaters are disposed inside the chamber body assembly 106 and in the interior space 110. As shown in FIG. 1 , an upper liner 156 and a lower liner 154 are disposed within the chamber body assembly 106. The upper liner 156 is disposed above the lower liner 154 and inside the inject ring 116. The lower liner 154 is disposed inside the base ring 114. The upper liner 156 and the lower liner 154 are bonded together while in the processing space. The upper liner 156 and the lower liner 154 shield the inner surfaces of the inject ring 116 and the base ring 114 from process gases in the processing space. The upper liner 156 and the lower liner 154 also serve to reduce heat transfer from the processing space to the inject ring 116 and the base ring 114. Reduced heat transfer improves uniform heating of the substrate 150, enabling more uniform deposition on the substrate 150 during processing.

[0034] The lower chamber exhaust passage 164 is disposed across from the substrate transfer passage 162 and connects the lower chamber exhaust passage 164 to an exhaust pump. The exhaust pump can also be coupled to and in fluid communication with the two upper chamber exhaust passage openings.

[0035] The lower liner 154 is located inside the opening of the base ring 114. The lower liner 154 is ring-shaped and has a lower liner body. The lower liner 154 is configured to separate the inner surface of the base ring 114 from the interior space 110. The upper liner 156 protects the inner surface of the base ring 114 from the process gas in the interior space 110 and further protects the interior space 110 from particles or other contaminants emitted by the base ring 114 and the lower heater 152.

[0036] An upper heater 158 and a lower heater 152 are also disposed within the interior space 110 in the chamber body assembly 106. The upper heater 158 is disposed between the upper liner 156 and the inject ring 116, and the lower heater 152 is disposed between the lower liner 154 and the base ring 114. Both the upper heater 158 and the lower heater 152 are disposed inside the chamber body assembly 106, allowing for more uniform heating of the substrate 150 while it is within the epitaxial chamber 100. The upper heater 158 and the lower heater 152 reduce heat loss to the walls of the chamber body assembly 106 by heating the walls, preventing the walls from acting as a heat sink during processing. Thus, the upper heater 158 and the lower heater 152 create a more uniform temperature distribution around the surfaces that define the interior space 110. Each of upper liner 156, lower liner 154, upper heater 158, and lower heater 152 is coupled to a flange 160 disposed within interior space 110. Flange 160 is a horizontal surface secured, e.g., clamped, between a portion of inject ring 116 and base ring 114 to enable securement of each of upper liner 156, lower liner 154, upper heater 158, and lower heater 152. In the embodiments described herein, upper heater 158 may include any suitable heater, such as a lamp, an infrared heater, a heat transfer fluid conduit, or a resistive heating element, among other types of heaters. Upper heater 158 is further shaped to receive openings that extend through inject ring 116 and base ring 114. Similarly, lower heater 152 may be configured similarly to upper heater 158. Lower heater 152 is further shaped to receive openings that extend through inject ring 116 and base ring 114.

[0037] The susceptor assembly 124 is disposed within the interior space 110 and configured to support the substrate 150 during processing. The susceptor assembly 124 includes a planar upper surface for supporting the substrate 150 and a shaft extending through a portion of the lower window 120 and the lower lamp module 104. The susceptor assembly 124 is coupled to a translation assembly 194 by the shaft. The translation assembly 194 includes a rotation assembly 196 and a lift assembly 198. The rotation assembly 196 is configured to rotate the susceptor assembly 124 about a central axis A, and the lift assembly 198 is configured to translate the susceptor assembly 124 linearly within the interior space 110 along the central axis A. The central axis A is also the vertical centerline of the epitaxial chamber 100.

[0038] 2A is a schematic bottom view of an upper lamp assembly 102 according to an embodiment of the present disclosure. The upper module body 126 of the upper lamp module 102 further includes a bottom surface 202, a top surface 214 (FIG. 2B), and support ridges 204 disposed around the outer edge of the bottom surface 202. The support ridges 204 contact a portion of the upper window 122 (shown in FIG. 1) to support the upper module body 126 while providing separation between the remainder of the bottom surface 202 and the upper window 122. The support ridges 204 disposed on the outside of the bottom surface 202 distribute the weight of the upper module body 126 around a portion of the peripheral support 172 or chamber body assembly 106, instead of being supported only by a central portion of the upper window 122. Distributing the weight reduces the likelihood of the upper window 122 breaking. An upper plenum 180, formed by separating the upper window 122 from the upper module body 126, allows the upper window 122 to be heated or cooled using gas flowing through the upper plenum 180. Gas may be supplied to the upper plenum 180 from a gas source, such as the heated gas source 132. The bottom surface 202 is curved and shaped similarly to the central portion of the upper window 122. The bottom surface 202 is concave.

[0039] Each lamp opening 128 includes an inner wall 206. Each inner wall 206 forms a circular or elliptical opening in the bottom surface 202. The inner walls 206 are configured to reflect radiant energy, focusing the radiant energy of the lamps 130 (shown in FIG. 1 ) and enabling a controlled energy distribution of the radiant energy across the substrate 150. In embodiments described herein, each inner wall 206 is curved such that the inner wall 206 forms a portion of an ellipse. In other embodiments, the inner walls 206 are vertical. The inner walls 206 have a reflectivity greater than about 90%, e.g., greater than about 98%, for wavelengths between about 700 nm and about 15,000 nm, e.g., between about 700 nm and about 1,000 nm or between about 1,000 nm and about 15,000 nm. The inner walls 206 may have a reflective coating, such as a coating of gold, polished aluminum, or another polished material with high reflectivity at infrared wavelengths. In some embodiments, the upper module body 126 is formed of a reflective material, such as aluminum or steel. In some embodiments, the upper module body 126 is formed of a first material, such as aluminum or steel, and plated with a second material. The second material can be copper, nickel, brass, bronze, silver, gold, aluminum, or any one of their alloys. The second material can be polished to enhance reflectivity. In some embodiments, the bottom surface 202 is also reflective. The bottom surface 202 can have a reflectivity greater than about 90%, for example, greater than about 98%, for wavelengths between about 700 nm and about 15,000 nm, for example, between about 700 nm and about 1,000 nm or between about 1,000 nm and about 15,000 nm. The bottom surface 202 is made of the same material as the inner wall 206 or is coated with the same material as the inner wall 206.

[0040] The inner walls 206 extend vertically through the upper module body 126, such that the inner walls 206 extend from the bottom surface 202 toward the top surface 214. The generally vertical orientation of the inner walls 206, and therefore the lamp openings 128, allows for a more focused distribution of radiant energy on the substrate. The generally vertical orientation of the lamp openings 128 further reduces radiant energy absorbed by the upper module body 126. The inner walls 206 form a portion of a sphere. Each of the lamp openings 128 includes a central axis that coincides with the central axis A about which the inner walls 206 are formed. The central axes through each lamp opening 128 have a common intersection below the bottom surface 202 of the upper lamp module 102, such that each lamp opening 128 faces inward toward the central axis A.

[0041] As shown, the pyrometer passage 138 is a slit disposed through the upper module body 126. The pyrometer passage 138 has a first length L1 at the bottom surface 202 and a second length L2 at the top surface 214 (FIG. 2B). The first length L1 is longer than the second length L2. The first length L1 is longer than the second length L2, reducing the opening at the top surface 214 but allowing a scanning pyrometer, such as pyrometer 134, to fully scan the top surface of the substrate 150. A heating gas passage 136 is disposed through the center of the upper module body 126.

[0042] 2B is a schematic plan view of the upper lamp module 102 of FIG. 2A. As shown in FIG. 2B, each of the plurality of lamp openings 128 further includes a lamp base support 212 and a bulb opening 210 disposed through the lamp base support 212. The bulb opening 210 connects the lamp base support 212 to the reflective inner wall 206. The lamp base support 212 is a stepped surface disposed around the bulb opening 210. Each lamp base support 212 includes a central bore 211 and an arc-shaped recess 213 surrounding the central bore. The lamp base support 212 is configured to support the lamp base 129. The bulb opening 210 is a circular opening disposed through a bottom surface 215 of the lamp base support 212. The bulb opening 210 is sized to allow the bulb of the lamp 130 to pass therethrough.

[0043] The top surface 214 of the upper lamp module 102 includes a ridge 216. The ridge 216 is slightly raised relative to the outer portion of the top surface 214. The ridge 216 increases the structural strength of the upper lamp module 102 and reduces deflection of the upper lamp module 102 when supporting lamps 130 and measurement tools such as pyrometers 134.

[0044] FIG. 2C is a schematic cross-sectional view of the upper lamp module 102 of FIGS. 2A-2B taken along section line 2C-2C. A central axis A extends through the top and bottom surfaces of the upper module body 102. The upper module body 126 is centered about the central axis A. Each of the reflective inner walls 206 is configured to reflect light from the bulb around a lamp opening 128 and direct the light toward the substrate 150 (shown in FIG. 1) through an opening 217 formed by the inner wall 206. The opening 217 of the lamp opening 128 is located where the inner wall 206 intersects with the bottom surface 202. The inner wall 206 and the opening 217 of each lamp opening 128 surround a lamp opening axis E. The lamp opening axis E is a centerline through the lamp opening 128 and is disposed at an angle φ with respect to the central axis A. The angle φ is less than about 45 degrees, for example, less than about 30 degrees, e.g., less than about 20 degrees. Each of the lamp openings 128 includes a similar lamp opening axis E and is disposed at an angle φ relative to the central axis A. Not all lamp opening axes E have the same angle φ, but are angled within the range of angle φ discussed above.

[0045] The centerlines 272 of the lamp openings 128 may be oriented at an angle 262 with respect to a horizontal line 260 drawn perpendicular to the side surface 252 of the upper lamp module 102. The centerlines 272 of the lamp openings 128 may be oriented at an angle 269 with respect to a centerline 299 of the upper lamp module 102. The centerlines 272 of each lamp opening 128 may be radially aligned such that the centerlines 272 of each lamp opening 128 intersect with the centerline 299 of the upper lamp module 102. Note that the intersection of the centerlines 272 is well below the substrate support surface 151. The centerlines 272 of the lamp openings 128 may be disposed at an angle 269 with respect to the bottom surface 202 of the upper lamp module 102. The bottom surface 202 may be curved such that the angle 269 of the centerlines 272 is perpendicular to the tangent to the bottom surface 202 at the intersection of the centerlines 272 and the bottom surface 202. It should be understood that the various descriptions above regarding the orientation angle 262 of each lamp opening 128 may be slightly modified to meet the requirements of the description. For example, the lamp openings 128 may be arranged in two or three concentric rings, with the angles 262 of the lamp openings 128 in the outer ring being different from the angles 262 of the lamp openings 128 in the inner ring. In comparing the angles 262 involving the lamp openings 128, the lamp openings 128 in the outer ring may have shallower angles, i.e., smaller angles 262, than the lamp openings 128 in the inner ring.

[0046] Each opening 217 has a first diameter D1 at the bottom surface 202. The first diameter D1 is approximately 10 mm to approximately 50 mm, for example, approximately 20 mm to approximately 40 mm. The first diameter D1 is selected to control the distribution of radiant energy and the focal position of the radiant energy exiting each of the plurality of lamp openings 128. Each bulb opening 210 has a second diameter D2. A lamp opening axis E similarly passes through the center of the bulb opening 210 such that the openings 217 and the bulb openings 210 are concentric around the lamp opening axis E. The second diameter D2 is approximately 5 mm to approximately 40 mm, for example, approximately 10 mm to approximately 30 mm. The second diameter D2 is large enough to allow one of the lamps 130 to pass therethrough, but small enough to reduce heat loss through the bulb opening 210. In some embodiments, the ratio of the first diameter D1 to the second diameter D2 is about 2:1 to about 5:4, such as about 2:1 to about 4:3, e.g., about 2:1 to about 3:2. The ratio of the first diameter D1 to the second diameter D2 is configured to provide a desired energy distribution at a substrate disposed below the upper module body 126. In some embodiments, the maximum bulb diameter of each lamp 130 is less than 1 mm smaller than the second diameter D2.

[0047] The lamp openings 128 are arranged in distinct zones. As shown here, the lamp openings 128 are arranged in three zones. Each of the three zones may be approximately pie-shaped, with each zone forming a sector of a circle. In an example where the zones are arranged as sectors of a circle, each sector may cover approximately 120 degrees of the upper lamp module 102. Alternatively, the three zones may be arranged concentrically. In yet another example, the zones may be arranged in a spiral. Each zone includes a distinct group of lamp openings 128.

[0048] Each zone includes approximately 5-10 lamp openings 128, for example, approximately 6-8 lamp openings 128. Each zone is positioned to heat a different portion of the substrate. Each zone of the plurality of lamp openings 128 includes a subset of inner lamp openings 128 and a subset of outer lamp openings 128. Within each subset of inner lamp openings 128, there are multiple lamp openings 128. The lamp openings 128 within each subset of inner lamp openings 128 are spaced apart by a small distance. This small distance is smaller than the distance from one of the lamp openings 128 within the inner subset to any of the lamp openings 128 within a second subset of inner lamp openings 128 within an adjacent zone. The lamp openings 128 within the subset of outer lamp openings 128 are uniformly spaced apart on the upper lamp module 102. Each lamp opening 128 in a subset of outer lamp openings 128 is an equal distance from an adjacent lamp opening 128 in a second outer subset as the next lamp opening 128 in the same outer subset.

[0049] Other arrangements of the lamp openings 128 are also contemplated. One alternative arrangement of the lamp openings 128 may include arranging the lamp openings 128 in multiple concentric rings, such as two or three concentric rings, or arranging the lamp openings 128 in other configurations where the lamp openings 128 are evenly distributed throughout the upper lamp module 102.

[0050] The general orientation of the lamps 130 may be determined by the shape and arrangement of each lamp opening 128. The general orientation of the lamps 130 in each lamp opening 128 may be at an angle 261 from the central axis A. The angle 261 may result in a perpendicular orientation of the lamps 130 with respect to the substrate support surface 151 of the susceptor assembly 124. The angle 261 with respect to the substrate support surface 151 may be approximately ±60 degrees with respect to the central axis A, for example, approximately ±45 degrees with respect to the central axis A, for example, approximately ±20 degrees with respect to the central axis A. In some examples, the bottom surface 202 may be parabolically curved, and each lamp 130 may be oriented perpendicular to the bottom surface 202. In yet other examples, each lamp 130 in each first zone is at a first angle, and each lamp 130 in each second zone is oriented at a second angle, where the first angle is not equal to the second angle. It is further envisioned that in such a zone arrangement, lamps 130 in zones further from the central axis A are at a greater angle than lamps 130 in zones closer to the central axis A.

[0051] 3A is a schematic top view of the lower lamp module 104. The lower module body 182 of the lower lamp module 104 further includes a top surface 302, a bottom surface 314 (shown in FIG. 3B), and a support ridge 304 disposed around the outer edge of the top surface 302. The support ridge 304 is a ring disposed around the top surface 302 of the lower module body 182 and extending outward from the lower module body 182. The support ridge 304 is configured to contact a portion of the lower window 120 (shown in FIG. 1 ), thereby isolating the top surface 302 of the lower module body 182 from the lower window 120 while providing separation between the remainder of the bottom surface 202 and the lower window 120. The support ridge 304 allows the lower module body 182 to contact only a portion of the peripheral support 170 or the chamber body assembly 106, rather than a central portion of the lower window 120. This reduces the likelihood of the lower window 120 breaking and forms the lower plenum 181. The upper surface 202 has a shape similar to the central portion of the lower window 120. In the embodiment described herein, the upper surface 202 is concave.

[0052] Each of the lamp openings 186 includes an interior wall 306. Each interior wall 306 is similar to the interior wall 206 of the upper lamp module 102. The interior walls 306 of the lamp openings 186 are configured to reflect radiant energy to enable focusing of the radiant energy from the lamps 188 (shown in FIG. 1 ) and to enable controlled energy distribution across the substrate 150. Each of the interior walls 306 forms a circular or elliptical opening to the lamp opening 186 in the upper surface 302.

[0053] The inner wall 306 extends vertically through the lower module body 182 such that the inner wall 306 extends from the top surface 302 toward the bottom surface 314. The vertical orientation of the inner wall 306, and therefore the lamp openings 186, allows for a more focused distribution of radiant energy on the substrate. The vertical orientation of the lamp openings 186 further reduces the radiant energy absorbed by the lower module body 182.

[0054] In some embodiments, the lower module body 182 is formed from a first material, such as aluminum or steel, and plated with a second material. The second material can be copper, brass, bronze, silver, gold, aluminum, or any one of these alloys. In some embodiments, the lower module body 182 does not include a coating of the second material and is instead a single material. The lower module body 182 can have a polished upper surface 302. In some embodiments, the upper surface 302 is also reflective. The upper surface 302 can have a reflectivity greater than about 90%, for example, greater than about 98%, for wavelengths between about 700 nm and about 15,000 nm, for example, between about 700 nm and about 1,000 nm or between about 1,000 nm and about 15,000 nm. The upper surface 302 is made of the same material as the inner wall 306 or is coated with the same material as the inner wall 306.

[0055] As shown, pyrometer passage 192 is a slit disposed through lower module body 182. Pyrometer passage 192 has a third length L3 at top surface 302 and a fourth length L4 at bottom surface 314 (FIG. 3B). Third length L3 is longer than fourth length L4. Third length L3 is longer than fourth length L4, reducing the opening at bottom surface 314 while still allowing a scanning pyrometer, such as pyrometer 190, to fully scan the bottom surface of substrate 150 or the bottom surface of a susceptor.

[0056] 1 , a susceptor shaft passage 195 is disposed through the center of the lower module body 182. The susceptor shaft passage 195 is disposed between the top surface 302 and the bottom surface 314 of the lower module body 182 and connects the top surface 302 and the bottom surface 314 of the lower module body 182. A portion of the susceptor shaft passage 195 adjacent the top surface 302 includes a curved surface 208. The curved surface 208 is configured to follow the shape of the lower window 120 as the lower window 120 curves through the susceptor shaft passage 195. The curved surface 208 connects the bottom surface 314 to the inner surface of the susceptor shaft passage 195.

[0057] FIG. 3B is a schematic plan view of the lower lamp module 104 of FIG. 3A according to an embodiment of the present disclosure. As shown in FIG. 3B, each of the plurality of lamp openings 186 further includes a lamp base support 312 and a bulb opening 310 disposed through the lamp base support 312. The bulb opening 310 connects the lamp base support 312 to the inner wall 306. The lamp base support 312 is a stepped surface disposed around the bulb opening 310. Each lamp base support 312 includes a central bore 311 and an arc-shaped recess 313 surrounding the central bore. The lamp base support 312 is configured to support and / or couple to the lamp base 184. The bulb opening 310 is a circular opening disposed through the top surface of the lamp base support 312. The bulb opening 310 is sized to allow the bulb of the lamp 188 to pass therethrough.

[0058] FIG. 3C is a schematic cross-sectional view of the lower lamp module 104 of FIG. 3A taken along plane 3C-3C. As shown in FIG. 3C, the lower module body 182 is disposed about a central axis B. In some embodiments, the inner wall 306 and the upper surface 302 intersect to form an opening 317. The opening 317 has a first diameter D1. In some embodiments, the opening 317 is elliptical or oval. In these embodiments, the first diameter D1 is the length of the major axis of the opening 317. The first diameter D1 is similar to the first diameter D1 described with reference to the upper module body 126. Each of the bulb openings 310 has a second diameter D2. The second diameter D2 is similar to the second diameter D2 described with reference to the upper module body 126. In some embodiments, the maximum bulb diameter of each lamp 188 is less than 1 mm smaller than the second diameter D2.

[0059] Each of the reflective interior walls 306 is configured to reflect light from the bulb around the lamp opening 186 and direct the light toward the substrate 150 ( FIG. 1 ) through an opening 317 formed by the interior wall 306. The opening 317 is located where the interior wall 306 intersects with the top surface 302. The walls of the interior wall 306 and the opening 317 of one of the lamp openings 186 surround a lamp opening axis F. The lamp opening axis F is a centerline through the lamp opening 186. The lamp opening axis F in turn passes through the center of the bulb opening 310 such that the opening 317 and the bulb opening 310 are concentric about the lamp opening axis F.

[0060] The lamp openings 186 in the lower lamp module 104 are arranged in zones. The zones may be configured similarly to those described above with respect to the upper lamp module 102. As shown here, the lamp openings 186 are arranged in two concentric zones. Each zone includes a ring of lamp openings 186 arranged on a common diameter around the centerline of the susceptor shaft passage 195, which is also the centerline of the epitaxial chamber 100. Each ring of lamp openings 186 includes at least three lamp openings 186. In the embodiment described herein, the inner zone includes a ring having 8 to 16 lamp openings 186, e.g., 10 to 14 lamp openings 186. The outer zone includes a ring having 12 to 20 lamp openings 186, e.g., 14 to 18 lamp openings. Herein, the outer zone includes more lamp openings 186 than the inner zone.

[0061] The orientation of the lamps 188 may be determined relative to a central axis A. The central axis A extends through the top surface 302 and the bottom surface 314 of the lower lamp module 104. The upper module body 126 is disposed about the central axis A. The orientation of the lamps 188 may be parallel to the central axis A. Alternatively, the orientation of the lamps 188 may be described as perpendicular to the bottom surface 314 of the lower lamp module 104. In some examples, the orientation of the lamps 188 may be at an angle greater than 0 degrees relative to the central axis A, such as approximately ±60 degrees relative to the central axis A, such as approximately ±45 degrees relative to the central axis A, or approximately ±20 degrees relative to the central axis A. In one example, the orientation of the lamps 188 is 0 degrees relative to the central axis A. In another example, each lamp 188 in each first zone is at a first angle that is different from the second angle of each lamp 188 in each second zone.

[0062] 4A is a schematic cross-sectional view of an upper heater 158 and a lower heater 152 according to a first embodiment of the present disclosure. The lower heater 152 is coupled to a flange 160. The upper heater 158 is disposed on the flange 160. The lower heater 152 is spaced from the lower liner 154 and the base ring 114 by the flange 160. In one example, the lower heater 152 is not in contact with one or more of the lower liner 154 and the base ring 114. Thus, the lower heater 152 heats the space between the lower liner 154 and the base ring 114, and specifically heats the base ring 114. This arrangement advantageously allows the lower heater 152 to be replaced or repaired independently of the lower liner 154 and the base ring 114.

[0063] The lower heater 152 can include one or more heating elements. In one example, the heating elements are resistive heating elements 402. Other types of heaters are also contemplated. The lower heater 152 reduces heat loss to the walls of the epitaxial chamber 100 by preventing the walls from becoming a heat sink during processing. In particular, the lower heater 152 is configured to compensate for heat loss from the interior space 110 to the base ring 114. Compensating for heat lost in the base ring 114 can more easily maintain the temperature of the interior space 110 at a desired temperature.

[0064] The lower heater 152 includes a substrate passage opening 404 disposed through the resistive heating element 402. The substrate passage opening 404 is configured to align with the substrate transfer passage 162. The substrate passage opening 404 is sized to allow a substrate, such as the substrate 150 shown in FIG. 1, to pass therethrough. The width W8 of the substrate passage opening 404 is between about 305 mm and about 350 mm, for example, between about 305 mm and about 315 mm (FIG. 4B).

[0065] In one example, the resistive heating element 402 is ring-shaped. Within the ring shape, the resistive heating element 402 is arranged in a serpentine configuration, such that the resistive heating element 402 includes multiple turns and bends. The resistive heating element 402 includes vertical portions 411 arranged parallel to one another and horizontal portions 412 arranged parallel to one another. The vertical portions 411 have a height 491. Each of the vertical portions 411 has one end connected to an adjacent vertical portion 411 by one of the horizontal portions 412 and another opposite end connected to an adjacent vertical portion 411 by another of the horizontal portions 412. Current from a power source (not shown) flows through the coil of the resistive heating element 402, i.e., the serpentine resistive heating element, resistively heating the resistive heating element 402.

[0066] In one example, the resistive heating element 402 is a carbon-based material, which results in a coil material with a resistivity of about 500 μΩ·cm to about 1500 μΩ·cm, such as about 750 μΩ·cm to about 1250 μΩ·cm. In some embodiments, the resistive heating element 402 is formed of a graphite material. Other materials for forming the resistive heating element 402 include paralytic graphite and silicon carbide. Paralytic graphite and silicon carbide may include alternative resistivity ranges. A gap 408 is formed between each adjacent vertical portion 411. The gap 408 allows for thermal expansion of the resistive heating element 402 and may also allow purge gas or other gases to pass therethrough. The gap 408 may be larger along the side of the resistive heating element 402 facing the substrate passage opening 404 to allow waste gases, such as exhaust gases, to pass therethrough. Alternatively, an opening or discontinuity in the resistive heating element 402 is located near the lower chamber exhaust passage 164. The exhaust gases pass through a gap 408 and into the lower chamber exhaust passage 164 (FIG. 1).

[0067] The resistive heating element 402 has a curved or hollow cylindrical shape and is disposed between the lower liner 154 and an inner wall 404 of the base ring 114. The resistive heating element 402 forms at least a partial ring. In some examples, the resistive heating element 402 completely or partially surrounds the interior space 110 and the lower liner 154. Each coil 406 of the resistive heating element 402 includes two vertical portions 411 joined by a horizontal portion 412 at a first distal end of each vertical portion 411 and one half of the horizontal portion 412 joined to the opposite distal end of each vertical portion 411. Multiple coils 406 are disposed within the resistive heating element 402.

[0068] The upper heater 158 is disposed between the inner circumferential surface of the inject ring 116 and the outer circumferential surface of the upper liner 156. In one example, the upper heater 158 is in contact with the inject ring 116 but is spaced apart from the upper liner 156. In another example, the upper heater 158 is spaced apart from both the upper liner 156 and the inject ring 116. The upper heater 158 may be formed from resistive heating elements 402 similar to those of the lower heater 152. For example, the upper heater 158 is disposed in a serpentine configuration. The upper heater 158 includes vertical portions having a height 492. The vertical portions are arranged parallel to one another. In one example, all of the vertical portions have the same height 492. The upper heater 158 further includes horizontal portions having a width 426. The upper heater 158 further includes horizontal portions arranged parallel to one another. In one example, all of the horizontal portions have the same width 426. However, it should be understood that the widths 462 of the horizontal portions do not all have to be the same. Each of the vertical portions has one end connected to an adjacent vertical portion by one of the horizontal portions and another opposite end connected to the adjacent vertical portion by another of the horizontal portions, forming a serpentine arrangement of heating elements 402.

[0069] In one example, the height 491 of the vertical portion 411 of the lower heater 152 is greater than the height 492 of the upper heater 158. However, it should be understood that the respective heights 491, 492 of the lower heater 152 and upper heater 158 are determined by chamber components.

[0070] FIG. 4B is a schematic plan isometric cross-sectional view of the heaters 152, 158 shown in FIG. 4A . The upper heater 158 and the lower heater 152 are shown partially assembled with the base ring 114 and the inject ring 116. The upper liner 156 or the lower liner 154 are not shown in this partial assembly. The curvature of the upper heater 158 and the lower heater 152 forms an opening 410 disposed within the interior space 110 of the epitaxial chamber 100. A flange 160 is connected to the upper end of the lower heater 152 and extends radially outward from the lower heater 152. The flange 160 may be configured to connect to or fit within a groove or recess in the base body 114 of the inject ring 116. In some embodiments, the flange 160 may extend between the base body 114 and the inject ring 116. The flange 160 has a flat ring shape.

[0071] The resistive heating element 402 of the lower heater 152 is electrically connected to a first electrical connection 406a (shown in FIG. 4A ) and a second electrical connection 452. The first electrical connection 406a and the second electrical connection 452 are configured to be connected to a power source. The first electrical connection 406a and the second electrical connection 406b provide power to the resistive heating element 402 of the lower heater 152, thereby controlling the temperature of the lower heater 152. Similarly, the resistive heating element 402 of the upper heater 158 is electrically connected to a first electrical connection 451A and a second electrical connection 451B. The first electrical connection 451A and the second electrical connection 451B are configured to be connected to a power source. The first electrical connection 451A and the second electrical connection 451B provide power to the resistive heating element 402 of the upper heater 158, thereby controlling the temperature of the upper heater 158.

[0072] FIG. 5A is a schematic cross-sectional view of a lower heater 152 according to a second embodiment 500 of the present disclosure. FIG. 5B is a schematic isometric view illustrating an additional example of the lower heater 152 of FIG. 5A. The heating element of the lower heater 152 can be formed from a tube 510. In one example, the tube 510 is a lamp, i.e., a light bulb, molded into a tube to control the ambient temperature. The tube 510 can be made of quartz or other high-temperature resistant transparent material. A filament, such as tungsten, is disposed within the tube 510. The filament heats up and generates radiant heating in a manner similar to the lamps used in the upper and lower lamp modules. The lower heater 152 can be one or more curved lamps that radiate heat to the chamber walls and / or chamber liner. In another example, the tube 510 has a temperature-controlling fluid flowing through it to control the ambient temperature.

[0073] The tube 510 of the lower heater 152 can have a first connection 551 and a second connection 552. The first connection 551 and the second connection 552 can be electrical, allowing power to be supplied to the tube to control the temperature of the lower heater 152. For example, power supplied to the first connection 551 and the second connection 552 can heat a tungsten filament within the tube 510. In one example, the lower heater 152 is a single continuous quartz tube 550 with a tungsten filament. It should be understood that the lower heater 152 can utilize other methods for radiating heat. For example, the lower heater 152 can be a carbon-based resistance coil or a fluid.

[0074] In other examples, the lower heater 152 can be formed from more than one heating element, or tube 510, as shown in FIG. 5B. The lower heating element 152 can be formed from multiple tubes, or can be formed such that there are more than one first connection 551 and more than one second connection 552. For example, the first connection 551 and second connection 552 of the first tube 550 can be different from the third and fourth connections of the second tube. In such examples, each tube 550 of the lower heater 152 can be individually and independently controlled.

[0075] In yet another example, lower heater 152 may be formed from three or more separate tubes 510. Lower heater 152 may include a first tube 570 having a first inlet connector 571 and a first outlet connector 572, a second tube 580 having a second inlet connector 581 and a second outlet connector 582, and a third tube 590 having a third inlet connector 591 and a third outlet connector 592. The flow of power through each of first tube 570, second tube 580, and third tube 590 may be individually controlled, advantageously allowing for better control of local temperatures along various regions of inject ring 116 for better process control and uniformity.

[0076] In the above example, the tube 510 can have a crossover 542 or a kink to neutralize the effects of thermal expansion of the tube 510 while ensuring that the temperature output of the tube 510 remains constant as the temperature of the fluid flowing inside the tube 510. For example, as shown in the second tube 580, the filament enters the first upper section 521 through the second inlet 581, passes through a 90-degree bend 524, and returns along the second lower section 522. The filament disposed within the tube 510 along the second lower section 522 enters the crossover 542 and then enters the third upper section 553, where a 90-degree bend 525 directs the filament back along the fourth lower section 554 to connect to the second outlet connector 582 of the second tube 580. The serpentine path of the second tube 580 compensates for thermal expansion to prevent binding or breakage of the tube 510 while distributing heat more evenly and allowing for easy installation of the lower heater 152. In some locations, as shown by the third tube 590 positioned around the slot for substrate transfer, the heating tube 510 has only an upper portion 501 and a lower portion 502 connected by a 90 degree bend 503. However, it should be understood that in cases where the thermal expansion of the tube 510 is negligible, such as when the size of the tube 510 is small relative to its location, for simplicity's sake, a tube 510 that does not incorporate the crossover 542 may be utilized entirely.

[0077] Advantageously, the lower heater 152 constructed from the tube 510 allows the lower heater 152 to be easily integrated into the heating system of the epitaxial chamber 100 .

[0078] 6A and 6B show two examples of optical filters 600 for the pyrometer passages 138 / 192. The optical filters 600 can be used in the upper dome 102 or the lower dome 104 to cover each pyrometer passage 138 / 192. The optical filters 600 filter and select infrared frequencies from the lamps 130 to improve pyrometer readings.

[0079] An IR pyrometer is used to measure the temperature of the substrate within the epitaxy chamber 100. Typically, a single wavelength (or “color”) is selected, and the pyrometer monitors IR radiation from the substrate and converts it to temperature using Planck’s law (with knowledge of the target’s optical properties). The monitored wavelength is selected so that it is not blocked by the upper window 122 or the lower window 120. For example, quartz windows (120, 122) filter out wavelengths above 4 μm, so the wavelengths detected by the pyrometer are below this 4 μm limit. Lower wavelengths provide higher resolution in terms of IR signal detection, but lower wavelengths also mean a weaker signal-to-noise ratio. Another complication in measuring temperature within the epitaxy processing chamber (temperatures of ∼1200°C) is that the signal received by the IR detector is a complex signal from both the target of interest and radiation from the heating filament (in the lamp heating system). Thus, an optical filter 600 is disclosed in the form of a sleeve or slab of quartz with the appropriate OH content that filters out a specific wavelength (e.g., 2.7 um) peak from the spectrum. The selected wavelength can be used for pyrometer detection with minimal noise from the lamp 130 emissions. In an alternative embodiment, the lamp bulb filter 600 could be made of a quartz material with tailored OH content (e.g., low OH, low Fe impurity quartz, ~5 mm thick to completely block unwanted emissions). In one example, low OH content quartz is used to filter out 2.7 um to allow for better IR detection of heat within the chamber.

[0080] The pyrometer passage 138 has an opening 626, a sidewall 628, and a top wall 638. The top wall 638 may be conical in shape and have a central opening 630. The opening 630 is configured to allow the pyrometer 130 to extend through the top wall 638 and into the pyrometer passage 138.

[0081] In one example, the optical filter 600 has a cup-shaped lens and is coupled to the top wall 638 of the pyrometer passage 138. The optical filter 600 can be screwed onto the top wall 638. Alternatively, the optical filter 600 can have a tang that is secured to an opening formed in the top wall 638. However, it should be understood that any suitable manner of attachment of the optical filter 600 to the top wall 638 is acceptable as long as the optical filter 600 is capable of filtering out unwanted IR wavelengths.

[0082] In another example, the optical filter 600 has a flat shape and is coupled to a sidewall 628 of the pyrometer passage 138. The optical filter 600 can be fixed to the sidewall 628. Alternatively, the optical filter 600 can have a protrusion that engages, for example, a quarter turn, with a feature extending from the sidewall 628. However, it should be understood that any suitable technique for coupling the optical filter 600 to the sidewall 628 can be utilized.

[0083] Advantageously, the optical filter 600 allows for more accurate detection of the temperature inside the epitaxial chamber 100 by filtering the lamp radiation to improve the signal-to-noise ratio when monitoring the temperature. The optical filter 600 reduces interference from irrelevant wavelengths for better IR detection of the temperature inside the epitaxial chamber 100. The various temperature control elements 199 disclosed above allow for decoupling of temperature control from surrounding chamber components, thereby enabling faster and more reliable temperature control. The temperature control elements 199 thus provide an improved method for managing and maintaining the temperature profile of the substrate within concentric zones, resulting in improved film quality, increased throughput, and reduced maintenance and cleaning.

[0084] The components described herein enable better uniformity and deposition control within a processing chamber such as epitaxial chamber 100. Although shown together within one epitaxial chamber 100, the components described herein can be utilized separately in existing or alternative deposition processing chambers.

[0085] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the present disclosure may be devised without departing from the basic scope thereof, the scope of which is defined by the following claims.

Claims

1. 1. An epitaxial chamber comprising: a chamber body and assembly; A lower window; An upper window; Equipped with a chamber body assembly comprising: the lower window and the upper window enclose an interior space; the epitaxial chamber further comprising: a susceptor assembly disposed within the interior space; a plurality of temperature control elements; Equipped with The plurality of temperature control elements include an upper lamp module, the upper lamp module comprising: an upper module body including a top surface and a bottom surface; central axis, a plurality of lamp openings arranged from the bottom surface toward the top surface; wherein the plurality of lamp openings include: a lamp base support; and a bulb opening in the bottom surface, each lamp opening configured to orient a bulb at an angle greater than 0 degrees relative to the central axis; an epitaxial chamber including:

2. an upper liner disposed within the interior space and adjacent the injection ring; a lower liner disposed within the interior space and adjacent to a base ring; The epitaxial chamber of claim 1 further comprising:

3. The epitaxial chamber of claim 2 , wherein the plurality of temperature control elements further comprises a lower heater disposed between the lower liner and the base ring.

4. The plurality of temperature control elements further include a lower lamp module, the lower lamp module comprising: a lower module body including a top surface and a bottom surface; central axis, a plurality of lamp openings arranged from the bottom surface toward the top surface; wherein the plurality of lamp openings include: a lamp base support; and a bulb opening in the bottom surface, each lamp opening configured to orient a bulb at an angle between greater than 0 degrees relative to the central axis and 45 degrees from the central axis. The epitaxial chamber of claim 1 , comprising:

5. 10. The epitaxial chamber of claim 1, wherein the plurality of lamp openings are arranged in three different zones, each zone containing between 5 and 10 lamp openings.

6. a heating gas passage disposed within the upper lamp module; a dome heater connected to the heated gas passage and configured to supply heated air into a plenum defined between the upper lamp module and the upper window; The epitaxial chamber of claim 1 further comprising:

7. the chamber body assembly Base ring and an injection ring disposed above the base ring; an upper heater disposed between an inner peripheral surface of the injection ring and an outer peripheral surface of the upper liner; a lower heater disposed between the lower liner and the base ring; The epitaxial chamber of claim 6 further comprising:

8. 1. A lamp module for an epitaxial processing chamber, comprising: a module body including a top surface and a bottom surface; A central axis and a plurality of lamp openings disposed from the bottom surface toward the top surface; wherein the plurality of lamp openings include: a bulb opening, each lamp opening configured to orient a bulb at an angle greater than 0 degrees and less than or equal to about 45 degrees from the central axis; A lamp module for an epitaxial processing chamber, comprising:

9. 9. The epitaxial processing chamber of claim 8, wherein the plurality of lamp openings are arranged in three different zones, each zone containing between 5 and 10 lamp openings.

10. 10. The epitaxial processing chamber of claim 9, wherein the reflective interior walls include a reflective coating having high reflectivity for infrared wavelengths.

11. 10. The epitaxial processing chamber of claim 9, wherein the bottom surface is curved and each bulb is oriented perpendicular to the bottom surface.

12. 10. The epitaxial processing chamber of claim 9, wherein each bulb in each first zone is oriented at a first angle and each lamp in each second zone is oriented at a second angle, the first angle not equal to the second angle.

13. The upper lamp module a heating gas passageway extending through the upper lamp module from the top surface to the bottom surface; a pyrometer passage, wherein the pyrometer passage comprises: bottom opening, Side walls, and a top wall having a second opening The epitaxial processing chamber of claim 10 comprising:

14. The epitaxial processing chamber of claim 15 further comprising an optical filter.

15. The epitaxial processing chamber of claim 16 , wherein the optical filter is coupled to the top wall.

16. 1. An epitaxial chamber comprising: a chamber body assembly having a ring shape; a lower window disposed below the chamber body assembly and coupled to the chamber body assembly; an upper window disposed above and coupled to the chamber body assembly; Equipped with a chamber body assembly comprising: the lower window and the upper window enclose an interior space; the epitaxial chamber further comprising: a susceptor assembly disposed within the interior space; a plurality of temperature control elements; the plurality of temperature control elements include an upper lamp module, the upper lamp module comprising: a module body including a top surface and a bottom surface; central axis, a pyrometer passageway having an optical filter; and A plurality of lamp openings disposed from the bottom surface toward the top surface and arranged within three distinct thermal zones. wherein the plurality of lamp openings include: a lamp base support; and a bulb opening, each lamp opening configured to orient a bulb at an angle greater than 0 degrees from the central axis; Including, the epitaxial chamber further comprising: an upper liner disposed within the interior space and adjacent the injection ring; a lower liner disposed within the interior space and adjacent to a base ring; a lower lamp module having two distinct thermal zones; An upper heater; a lower heater disposed between the lower liner and the base ring; Dome heater and a heating gas passage disposed through the upper lamp module; An epitaxial chamber comprising:

17. a plenum formed between the upper lamp modules, the plenum fluidly coupled to the heated gas passage, and the dome heater supplying heated air into the plenum through the heated gas passage; 17. The epitaxial processing chamber of claim 16, further comprising:

18. 17. The epitaxial processing chamber of claim 16, wherein the optical filter is coupled to a top wall, the optical filter configured to filter out noise of extraneous wavelengths from the pyrometer.

19. 17. The epitaxial processing chamber of claim 16, wherein the bottom surface is curved and each bulb is oriented perpendicular to the bottom surface.

20. 17. The epitaxial processing chamber of claim 16, wherein each bulb in each first zone is oriented at a first angle and each lamp in each second zone is oriented at a second angle, the first angle not equal to the second angle.

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