Stretchable semiconductor device

Abstract

To provide a stretchable semiconductor device that reduces the impact of stretching on semiconductor elements and enables stabilization of their operation.SOLUTION: It has a stretchable resin substrate 2 capable of stretching and contracting, a semiconductor element 3 placed on top of the stretchable resin substrate 2, and wiring layers 10a, 10b, 11a, 11b provided on the surface side facing the semiconductor element 3 on the stretchable resin substrate 2, capable of elastic deformation, the semiconductor element 3 has connection terminals 8a, 8b, 9a, 9b provided on the surface facing the stretchable resin substrate 2, and the wiring layers 10a, 10b, 11a, 11b are electrically connected to the connection terminals 8a, 8b, 9a, 9b.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present invention relates to a semiconductor device having elasticity. [Background technology]

[0002] For example, there are semiconductor devices with stretchability (see, for example, Patent Documents 1 and 2 below). Such stretchable semiconductor devices are necessary for driving electronic devices such as organic electroluminescence (EL) displays that can be deformed into three-dimensional shapes such as spherical or free-form surfaces, and pressure-sensitive sensors.

[0003] Specifically, Patent Document 1 below discloses a stretchable semiconductor element comprising a flexible substrate having a support surface and a semiconductor structure having a curved inner surface, at least a portion of the curved inner surface being bonded to the support surface of the flexible substrate.

[0004] Furthermore, Patent Document 2 below discloses a stretchable device in which one or more semiconductor elements are formed on a resin substrate, and the semiconductor elements are covered with an inner sealing layer, and one or more semiconductor-mounted substrates are embedded in an elastic resin film made of an elastomer, and a conductive circuit connected to the semiconductor elements is formed in the elastic resin film, and the periphery of the semiconductor-mounted substrate is covered with an outer sealing layer. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Application Laid-Open No. 2007-281406 [Patent Document 2] Japanese Patent Application Laid-Open No. 2015-149364 Summary of the Invention [Problem to be solved by the invention]

[0006] In the above-described stretchable semiconductor device, a semiconductor element such as a thin film transistor (TFT) is formed on a stretchable substrate. However, in conventional semiconductor devices, when the substrate is stretched, peeling easily occurs between the substrate (stretchable portion) and the semiconductor element (non-stretchable portion), which can cause instability in the characteristics of the semiconductor element.

[0007] Furthermore, when the substrate is expanded or contracted, it becomes difficult to maintain electrical connection between the wiring on the expanding or contracting substrate side and the electrodes on the semiconductor element side, which may result in disconnection.

[0008] The present invention has been proposed in consideration of the above-mentioned conventional circumstances, and aims to provide a semiconductor device having elasticity that reduces the impact of expansion and contraction on semiconductor elements and enables stabilization of the operation of the semiconductor elements. [Means for solving the problem]

[0009] In order to achieve the above object, the present invention provides the following means. [1] A stretchable resin substrate that can be stretched freely; a semiconductor element disposed on the stretchable resin substrate; a wiring layer provided in a stretchable manner on a surface of the stretchable resin substrate facing the semiconductor element, The wiring layer is electrically connected to the semiconductor element. [2] The semiconductor element has a connection terminal provided on a surface opposite to a surface facing the stretchable resin substrate, The stretchable semiconductor device according to [1], wherein the wiring layer is electrically connected to the connection terminal. [3] The semiconductor element has a connection terminal provided on a surface facing the stretchable resin substrate, The stretchable semiconductor device according to [1], wherein the wiring layer is electrically connected to the connection terminal. [4] The stretchable semiconductor device according to [1], characterized in that it comprises a protective layer arranged to cover the semiconductor element on the surface of the stretchable resin substrate facing the semiconductor element. [5] The stretchable semiconductor device according to [1], characterized in that it comprises a first stretchable resin layer arranged to cover the surface of the stretchable resin substrate facing the semiconductor element. [6] The stretchable semiconductor device according to [5], characterized in that it comprises a second stretchable resin layer arranged to cover the surface of the stretchable resin substrate opposite to the surface facing the semiconductor element. [7] The stretchable semiconductor device according to [1], wherein the wiring layer is formed from a fluid metal material in which metal particles are dispersed in a liquid metal. [8] The stretchable semiconductor device according to [1], wherein the wiring layer is disposed in a state where it is embedded in the stretchable resin substrate. [9] The semiconductor device having stretchability according to [1], characterized in that the wiring layer is arranged in a state covered with a stretchable layer arranged on the stretchable resin substrate.

[10] An insulating layer is provided on the surface of the stretchable resin substrate facing the semiconductor element, The stretchable semiconductor device according to [1], wherein the wiring layer is disposed in a state embedded in the insulating layer.

[11] The stretchable resin substrate has adhesiveness, The stretchable semiconductor device according to [1], wherein the semiconductor element is attached to the stretchable resin substrate by the adhesive force of the stretchable resin substrate.

[12] An adhesive layer is provided on the surface of the stretchable resin substrate facing the semiconductor element, The semiconductor device having elasticity according to [1], characterized in that the semiconductor element is attached to the elastic resin substrate via the adhesive layer.

[13] A plurality of the semiconductor elements are arranged side by side within the surface of the stretchable resin substrate, The stretchable semiconductor device according to [1], wherein the wiring layer is stretchable between adjacent ones of the plurality of semiconductor elements. [Effects of the Invention]

[0010] As described above, according to the present invention, it is possible to provide a semiconductor device having elasticity that reduces the effect of expansion and contraction on a semiconductor element and enables stabilization of the operation of the semiconductor element. [Brief explanation of the drawings]

[0011] [Figure 1] 1 is a plan view showing a configuration of a semiconductor device according to a first embodiment of the present invention. [Figure 2] 2 is an enlarged plan view of a main part of the semiconductor device in the enclosed area A shown in FIG. [Figure 3] 3 is an enlarged cross-sectional view of a main part of the semiconductor device taken along line BB shown in FIG. 2. [Figure 4] 3 is an enlarged cross-sectional view of a main part of the semiconductor device taken along line CC shown in FIG. 2. [Figure 5] 2 is an enlarged cross-sectional view of a main part of the semiconductor device taken along line DD shown in FIG. 1. [Figure 6] 1. FIG. 4 is an enlarged plan view showing the configuration of a semiconductor device according to a second embodiment of the present invention, illustrating a main part of the semiconductor device corresponding to the enclosed part A shown in FIG. [Figure 7] 7 is an enlarged cross-sectional view of a main part of the semiconductor device taken along line EE shown in FIG. 6. [Figure 8] 7 is an enlarged cross-sectional view of a main part of the semiconductor device taken along line FF shown in FIG. 6. [Figure 9] 3A and 3B are cross-sectional views illustrating cross-sectional shapes of a first wiring layer and a second wiring layer. [Figure 10] 4A and 4B are cross-sectional views illustrating cross-sectional shapes of a first wiring layer and a second wiring layer embedded in a first trench and a second trench, respectively. DETAILED DESCRIPTION OF THE INVENTION

[0012] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In the drawings used in the following description, characteristic portions may be enlarged for convenience in order to make the features easier to understand, and the dimensional ratios of each component may not be the same as in reality. Furthermore, the materials, dimensions, etc. exemplified in the following description are merely examples, and the present invention is not necessarily limited to them, and can be implemented with appropriate changes within the scope of the present invention.

[0013] In the drawings shown below, an XYZ Cartesian coordinate system is set, with the X-axis direction being a first direction X within the plane of the semiconductor device, the Y-axis direction being a second direction Y perpendicular to the first direction X within the plane of the semiconductor device, and the Z-axis direction being a third direction Z perpendicular to the plane of the semiconductor device.

[0014] (First embodiment) First, as a first embodiment of the present invention, the configuration of a semiconductor device 1A having elasticity shown in, for example, FIGS. 1 to 5 will be described.

[0015] FIG. 1 is a plan view showing the configuration of semiconductor device 1A. FIG. 2 is an enlarged plan view of a main part of semiconductor device 1A in an enclosed area A shown in FIG. 1. FIG. 3 is an enlarged cross-sectional view of a main part of semiconductor device 1A taken along line BB shown in FIG. 2. FIG. 4 is an enlarged cross-sectional view of a main part of semiconductor device 1A taken along line CC shown in FIG. 2. FIG. 5 is an enlarged cross-sectional view of a main part of semiconductor device 1A taken along line DD shown in FIG. 1.

[0016] As shown in Figures 1 to 4, the semiconductor device 1A of this embodiment comprises a stretchable resin substrate 2 that is flexible, a plurality of semiconductor elements 3 arranged in a line on the surface of the stretchable resin substrate 2, a plurality of protective layers 4 arranged to cover each of the plurality of semiconductor elements 3, a first stretchable resin layer 5 arranged to cover the side of the stretchable resin substrate 2 that faces the semiconductor elements 3, and a second stretchable resin layer 6 arranged to cover the side of the stretchable resin substrate 2 opposite the side that faces the semiconductor elements 3.

[0017] In the semiconductor device 1A of this embodiment, as an example of the semiconductor element 3, a configuration is illustrated in which light-emitting diode (LED) elements (hereinafter referred to as "LED elements 3" as necessary) are arranged in a matrix in a first direction X and a second direction Y that intersect each other (orthogonal in this embodiment) within the plane of the elastic resin substrate 2.

[0018] The stretchable resin substrate 2 is a film substrate containing an acrylic adhesive composition having adhesive properties, and among these, it is preferable to use an acrylic resin which has excellent transparency, weather resistance, and heat resistance, and has excellent conformability to uneven surfaces and excellent adhesive strength and holding power for curved surfaces.

[0019] For example, the stretchable resin substrate 2 can be made of an adhesive acrylic polymer containing 50% by mass or more of a monomer having an acryloyl group and a methacryloyl group as an adhesive acrylic adhesive composition. The stretchable resin substrate 2 may also be made of a tackifying resin, such as a rosin-based tackifying resin, a terpene-based tackifying resin, or an epoxy-based tackifying resin. The resin material constituting the film substrate of the stretchable resin substrate 2 is a resin with a tensile elongation of 100% or more, such as an acrylic resin, a silicone resin, or a styrene-butadiene resin. The thickness of the stretchable resin substrate 2 is preferably 0.005 to 1.5 mm, and more preferably 0.05 to 1 mm.

[0020] The adhesive strength of the stretchable resin substrate 2 is, for example, preferably 5 N / 20 mm or more, more preferably 7 N / 20 mm or more, in terms of 180° peel adhesive strength measured in accordance with "JIS Z 0237." The high adhesive strength of the stretchable resin substrate 2 is a necessary element for preventing peeling from the LED element 3 and for integrating it, and there is no particular upper limit to the adhesive strength.

[0021] In order to improve the life span and durability of the stretchable resin substrate 2, it is preferable that the stretchable resin substrate 2 has the ability to return to its original shape after being stretched. Specifically, the recovery rate after being stretched 100% is preferably 70% or more, and more preferably 85% or more. If the recovery rate is low, it becomes difficult to obtain durability. It is known that the recovery rate can be adjusted by the degree of crosslinking and average molecular weight of the acrylic polymer, and adjustment is possible by this method.

[0022] Moreover, it is preferable that the LED element 3 is attached to the stretchable resin substrate 2 via an adhesive layer 7. The adhesive layer 7 is a layer for improving adhesion between the stretchable resin substrate 2, which is the stretchable portion, and the LED element 3, which is the non-stretchable portion, and is formed on the surface of the LED element 3 facing the stretchable resin substrate 2.

[0023] The adhesive layer 7 is made of, for example, a silicon oxide (SiO2) film or a silicon nitride (SiN x The adhesive layer 7 preferably has a thickness of 5 to 200 nm, more preferably 10 to 20 nm.

[0024] The LED element 3 has a pair of first connection terminals 8a, 8b and a pair of second connection terminals 9a, 9b provided on the surface (upper surface) opposite to the surface (lower surface) facing the stretchable resin substrate 2. The first connection terminals 8a, 8b and the second connection terminals 9a, 9b may be made of a metal such as titanium (Ti), chromium (Cr), aluminum (Al), molybdenum (Mo), gold (Au), silver (Ag), copper (Cu), or an alloy thereof, or a conductive film formed by laminating two or more of these metals.

[0025] The pair of first connection terminals 8a, 8b are arranged at the center of the side edges located on both sides in the first direction X on the top surface of the LED element 3. The pair of second connection terminals 9a, 9b are arranged at the center of the side edges located on both sides in the second direction Y on the top surface of the LED element 3.

[0026] A pair of first wiring layers 10a, 10b and a pair of second wiring layers 11a, 11b, each having elasticity, are provided on one surface (upper surface) of the elastic resin substrate 2. The first wiring layers 10a, 10b and the second wiring layers 11a, 11b are formed of, for example, a fluid metal material in which metal particles are dispersed in a liquid metal.

[0027] The liquid metal can be, for example, a eutectic alloy containing gallium (Ga) and indium (In), or a eutectic alloy containing Ga, In, and tin (Sn).The melting point can be changed by adjusting the amount of In and Sn added to Ga as the main component.

[0028] Metal particles can be, for example, nickel (Ni), Au, Ag, Cu, or Si. The liquid metals mentioned above have very strong atomic forces, resulting in high surface energy and very poor wettability. Therefore, adding the above-mentioned metal particles can improve wettability.

[0029] For example, by mixing 1 to 20 mass % of Ni particles with an average particle size of 1 to 50 μm into a liquid metal containing gallium (Ga) and indium (In), a paste is formed, which makes it possible to form the first wiring layers 10a, 10b and the second wiring layers 11a, 11b by printing.

[0030] The pair of first wiring layers 10a, 10b are provided extending in the first direction X so as to electrically connect adjacent ones of the plurality of LED elements 3 in the first direction X. In other words, the pair of first wiring layers 10a, 10b are shared between adjacent ones of the plurality of LED elements 3 in the first direction X.

[0031] On the other hand, the pair of second wiring layers 11a, 11b are provided extending in the second direction Y so as to electrically connect the plurality of LED elements 3 that are adjacent in the second direction Y. In other words, the pair of second wiring layers 11a, 11b are shared between the plurality of LED elements 3 that are adjacent in the second direction Y.

[0032] One end side of the pair of first wiring layers 10a, 10b is disposed to extend above the LED element 3 and is electrically connected to the pair of first connection terminals 8a, 8b. That is, the surface of each of the first wiring layers 10a, 10b facing the first connection terminals 8a, 8b is in contact with each of the first connection terminals 8a, 8b.

[0033] On the other hand, one end side of the pair of second wiring layers 11a, 11b is arranged to extend above the LED element 3 and is electrically connected to the second connection terminals 9a, 9b. That is, the surfaces of the second wiring layers 11a, 11b facing the second connection terminals 9a, 9b are in contact with the second connection terminals 9a, 9b.

[0034] Furthermore, as shown in Figure 1, of the multiple first wiring layers 10a, 10b lined up in the second direction Y, the ends of each first wiring layer 10a extending from one side in the first direction X toward the side end of the stretchable resin substrate 2 are gathered together in the central portion along the edge portion of the stretchable resin substrate 2 and then electrically connected to the first non-stretchable wiring substrate 12.

[0035] On the other hand, of the multiple second wiring layers 11a, 11b arranged in the first direction X, the ends of each second wiring layer 11b extending from one side in the second direction Y toward the side end of the stretchable resin substrate 2 gather together in the central portion along the edge portion of the stretchable resin substrate 2 and then are electrically connected to the second non-stretchable wiring substrate 13.

[0036] The first non-stretchable wiring board 12 and the second non-stretchable wiring board 13 are film substrates made of flexible resin (plastic), and can be attached to one surface (top surface) of the stretchable resin substrate 2 due to the adhesive strength of the stretchable resin substrate 2 described above.

[0037] For example, polyimide (PI), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polycarbonate (PC), nanocellulose, etc. can be used for the first and second non-stretchable wiring boards 12, 13. Among these, it is preferable to use PI, which has excellent heat resistance and chemical resistance against thermal baking and chemical treatment required when forming semiconductor elements, etc. Furthermore, the thickness of the first and second non-stretchable wiring boards 12, 13 is preferably 10 to 1000 μm, more preferably 50 to 500 μm, and even more preferably 100 to 200 μm.

[0038] The first non-stretchable wiring board 12 and the second non-stretchable wiring board 13 are arranged in a peripheral region E that surrounds the periphery of the plurality of LED elements 3. In this embodiment, they are arranged in the central portion of this peripheral region E along each edge portion on the surface of the stretchable resin substrate 2.

[0039] The ends of each first wiring layer 10a extended to the peripheral region E are disposed so as to extend onto the first non-stretchable wiring board 12, and are electrically connected to the respective upper wiring layers 12a disposed side by side on the surface of the first non-stretchable wiring board 12. Similarly, the ends of each second wiring layer 11b extended to the peripheral region E are disposed so as to extend onto the second non-stretchable wiring board 13, and are electrically connected to the respective upper wiring layers 13a disposed side by side on the surface of the second non-stretchable wiring board 13.

[0040] 1 and 5, a first flexible wiring board (hereinafter referred to as "first FPC") 14a for external connection is electrically connected to the first non-stretchable wiring board 12 via an anisotropic conductive film (hereinafter referred to as "ACF") 15. Similarly, a second flexible wiring board (hereinafter referred to as "second FPC") 14b for external connection is electrically connected to the second non-stretchable wiring board 13 via an ACF 15 on the outer side of the side end of the stretchable resin substrate 2, as shown in FIG.

[0041] When connecting the first and second FPCs 14a, 14b, the first and second FPCs 14a, 14b are thermocompression bonded while pressing the connection terminals of the first and second non-stretchable wiring boards 12, 13 via the ACF 15. This bonds the first and second FPCs 14a, 14b at the pressure-bonded portions of the ACF 15, and electrically connects the upper wiring layers 12a, 13a of the first and second non-stretchable wiring boards 12, 13 to the connection terminals of the first and second FPCs 14a, 14b via the ACF 15.

[0042] The protective layer 4 covers each of the plurality of LED elements 3 arranged on the elastic resin substrate 2, thereby suppressing distortion of the LED elements 3 and stabilizing the characteristics of the LED elements 3.

[0043] The protective layer 4 can be made of an organic film such as an epoxy resin, an olefin resin, an acrylic resin, or a polyimide resin. Among these, it is preferable to use a photoreactive epoxy resin, which can be made into a thick film of 1 μm or more and can be patterned by light. Specifically, a negative photoresist material such as SU-8 can be used. The thickness of the protective layer 4 is preferably 0.1 to 5 μm, and more preferably 1 to 2 μm.

[0044] The first stretchable resin layer 5 is provided so as to cover the entire surface of one surface (upper surface) of the stretchable resin substrate 2. On the other hand, the second stretchable resin layer 6 is provided so as to cover the entire surface of the other surface (lower surface) of the stretchable resin substrate 2.

[0045] The first stretchable resin layer 5 and the second stretchable resin layer 6 are formed by bonding or laminating on the surface of the stretchable resin substrate 2 stretchable resin substrates made of the same or different stretchable resin material as the stretchable resin substrate 2, such as rubber or elastomer.

[0046] As a result, in the semiconductor device 1A of this embodiment, the stretchable resin substrate 2 and the first and second stretchable resin layers 5 and 6 can be stretched and contracted together.

[0047] In addition, in the semiconductor device 1A of this embodiment, the LED element 3, the first wiring layers 10a, 10b and the second wiring layers 11a, 11b provided on one surface (top surface) of the elastic resin substrate 2 are arranged in a state embedded in the first elastic resin layer 5.

[0048] In the semiconductor device 1A of this embodiment having the above-described configuration, the stretchable resin substrate 2 is stretchable together with the first and second stretchable resin layers 5 and 6 between adjacent ones of the plurality of LED elements 3.

[0049] Furthermore, in the semiconductor device 1A of this embodiment, a plurality of LED elements 3, which form the non-stretchable portion, are sandwiched and held between the stretchable resin substrate 2, which form the stretchable portion, and the first stretchable resin layer 5. Furthermore, each LED element 3 is covered with a protective layer 4, which forms the non-stretchable portion.

[0050] This makes it possible to reduce the influence of expansion and contraction of the stretchable resin substrate 2 on the LED element 3 when the stretchable resin substrate 2 is expanded and contracted in the first direction X and the second direction Y.

[0051] 2, in the semiconductor device 1A of this embodiment, the first wiring layers 10a and 10b are provided so as to be stretchable in accordance with the expansion and contraction in the first direction X of the above-mentioned stretchable resin substrate 2. On the other hand, in the semiconductor device 1A of this embodiment, the second wiring layers 11a and 11b are provided so as to be stretchable in accordance with the expansion and contraction in the second direction Y of the above-mentioned stretchable resin substrate 2, as shown in FIG.

[0052] Furthermore, in the semiconductor device 1A of this embodiment, the first wiring layers 10a and 10b and the second wiring layers 11a and 11b are arranged in a state where they are covered with the first elastic resin layer 5.

[0053] This allows the first and second wiring layers 10a, 10b, 11a, and 11b, which have fluidity, to maintain their shapes while expanding and contracting (changing their shape) in accordance with the expansion and contraction of the elastic resin substrate 2 in the first direction X and the second direction Y without breaking, making it possible to prevent short circuits and the like caused by scattering of the fluid metal material, etc.

[0054] Therefore, in the semiconductor device 1A of this embodiment, even when the stretchable resin substrate 2 is stretched in the first direction X and the second direction Y, it is possible to maintain the electrical connection between each of the first connection terminals 8a, 8b and each of the first wiring layers 10a, 10b, and the electrical connection between each of the second connection terminals 9a, 9b and each of the second wiring layers 11a, 11b.

[0055] As described above, in the semiconductor device 1A of this embodiment, it is possible to reduce the influence of expansion and contraction of the stretchable resin substrate 2 on the LED element 3, and to stabilize the operation of the LED element 3.

[0056] (Second embodiment) Next, a semiconductor device 1B shown in, for example, FIGS. 6 to 8 will be described as a second embodiment of the present invention.

[0057] 6 is a plan view showing the configuration of semiconductor device 1B, enlarging a main portion of semiconductor device 1B corresponding to boxed portion A shown in FIG. 1. FIG. 7 is a cross-sectional view showing an enlargement of a main portion of semiconductor device 1B taken along line EE shown in FIG. 6. FIG. 8 is a cross-sectional view showing an enlargement of a main portion of semiconductor device 1B taken along line FF shown in FIG. 6. In the following description, the same parts as those in semiconductor device 1A will not be described and will be denoted by the same reference numerals in the drawings.

[0058] As shown in Figures 6, 7 and 8, the semiconductor device 1B of this embodiment differs from the semiconductor device 1A in the configuration of electrically connecting the first connection terminals 8a, 8b and the first wiring layers 10a, 10b, and the configuration of electrically connecting the second connection terminals 9a, 9b and the second wiring layers 11a, 11b.

[0059] Specifically, the pair of first connection terminals 8a, 8b and the pair of second connection terminals 9a, 9b are provided on the surface (lower surface) of each LED element 3 facing the stretchable resin substrate 2. That is, the pair of first connection terminals 8a, 8b are arranged in the center portions of the side edges located on both sides in the first direction X on the lower surface of the LED element 3. The pair of second connection terminals 9a, 9b are arranged in the center portions of the side edges located on both sides in the second direction Y on the lower surface of the LED element 3.

[0060] The pair of first wiring layers 10a, 10b are disposed in a state of being embedded in a pair of first grooves 16a, 16b formed with a substantially rectangular cross section in the stretchable resin substrate 2. Specifically, each of the first wiring layers 10a, 10b can be formed by filling each of the first grooves 16a, 16b with the above-mentioned fluid metal material using a dispenser or the like.

[0061] By being embedded in the first trenches 16a and 16b, the first wiring layers 10a and 10b can maintain their shapes in accordance with the shapes of the first trenches 16a and 16b while retaining fluidity.

[0062] The pair of first wiring layers 10a, 10b face the pair of first connection terminals 8a, 8b and are electrically connected to the pair of first connection terminals 8a, 8b. That is, the surfaces of each of the first wiring layers 10a, 10b facing the first connection terminals 8a, 8b are in contact with the first connection terminals 8a, 8b.

[0063] The pair of second wiring layers 11a, 11b are disposed in a state of being embedded in a pair of second grooves 17a, 17b formed with a substantially rectangular cross section in the stretchable resin substrate 2. Specifically, each of the second wiring layers 11a, 11b can be formed by filling the above-mentioned fluid metal material into each of the second grooves 17a, 17b using a dispenser or the like.

[0064] By being embedded in the second trenches 17a and 17b, the second wiring layers 11a and 11b can maintain their shapes in accordance with the shapes of the second trenches 17a and 17b while retaining fluidity.

[0065] The pair of second wiring layers 11a, 11b face the pair of second connection terminals 9a, 9b and are electrically connected to the pair of second connection terminals 9a, 9b. That is, the surfaces of the second wiring layers 11a, 11b facing the second connection terminals 9a, 9b are in contact with the second connection terminals 9a, 9b.

[0066] Other than that, the semiconductor device 1B of this embodiment has basically the same configuration as the semiconductor device 1A.

[0067] In the semiconductor device 1B of this embodiment having the above-described configuration, the stretchable resin substrate 2 is stretchable together with the first and second stretchable resin layers 5 and 6 between adjacent ones of the plurality of LED elements 3.

[0068] Furthermore, in the semiconductor device 1B of this embodiment, a plurality of LED elements 3, which form the non-stretchable portion, are sandwiched and held between the stretchable resin substrate 2, which form the stretchable portion, and the first stretchable resin layer 5. Furthermore, each LED element 3 is covered with a protective layer 4, which forms the non-stretchable portion.

[0069] This makes it possible to reduce the influence of expansion and contraction of the stretchable resin substrate 2 on the LED element 3 when the stretchable resin substrate 2 is expanded and contracted in the first direction X and the second direction Y.

[0070] 7, in the semiconductor device 1A of this embodiment, the first wiring layers 10a and 10b are provided to be stretchable in accordance with the expansion and contraction in the first direction X of the above-mentioned stretchable resin substrate 2. On the other hand, in the semiconductor device 1A of this embodiment, as shown in FIG. 8, the second wiring layers 11a and 11b are provided to be stretchable in accordance with the expansion and contraction in the second direction Y of the above-mentioned stretchable resin substrate 2.

[0071] Furthermore, in the semiconductor device 1A of this embodiment, the above-mentioned first wiring layers 10a, 10b are arranged in a state where they are embedded in the first groove portions 16a, 16b, and the second wiring layers 11a, 11b are arranged in a state where they are embedded in the second groove portions 17a, 17b.

[0072] This allows the first and second wiring layers 10a, 10b, 11a, and 11b, which have fluidity, to maintain their shapes while expanding and contracting (changing their shape) in accordance with the expansion and contraction of the elastic resin substrate 2 in the first direction X and the second direction Y without breaking, making it possible to prevent short circuits and the like caused by scattering of the fluid metal material, etc.

[0073] Therefore, in the semiconductor device 1B of this embodiment, even when the stretchable resin substrate 2 is stretched in the first direction X and the second direction Y, it is possible to maintain the electrical connection between each of the first connection terminals 8a, 8b and each of the first wiring layers 10a, 10b, and the electrical connection between each of the second connection terminals 9a, 9b and each of the second wiring layers 11a, 11b.

[0074] As described above, in the semiconductor device 1B of this embodiment, it is possible to reduce the influence of the expansion and contraction of the stretchable resin substrate 2 on the LED element 3, and to stabilize the operation of the LED element 3.

[0075] The present invention is not necessarily limited to the above-described embodiment, and various modifications can be made without departing from the spirit of the present invention.

[0076] The cross-sectional shapes of the first and second wiring layers 10a, 10b, 11a, and 11b can be changed as appropriate, and can be, for example, the cross-sectional shapes shown in Figures 9(A) to 9(C). Specifically, on the surface of the stretchable resin substrate 2, the cross-sectional shape is not limited to the substantially rectangular shape shown in Figure 9(A), but may also be the substantially arcuate cross-sectional shape shown in Figure 9(B) or the substantially trapezoidal cross-sectional shape shown in Figure 9(C).

[0077] The cross-sectional shapes of the wiring layers 10a, 10b, 11a, and 11b embedded in the first and second trenches 16a, 16b, 17a, and 17b can also be changed as appropriate, and can be, for example, cross-sectional shapes such as those shown in Figures 10(A) to 10(E). Specifically, the wiring layers 10a, 10b, 11a, and 11b are not limited to those embedded in the first and second trenches 16a, 16b, 17a, and 17b having a substantially rectangular cross section as shown in Figure 10(A), but may also have an arc cross section as shown in Figure 10(B), a substantially triangular cross section as shown in Figure 10(C), a substantially inverted trapezoid cross section as shown in Figure 10(D), or a substantially trapezoid cross section as shown in Figure 10(E).

[0078] Furthermore, although the semiconductor devices 1A and 1B are configured to include the first and second elastic resin layers 5 and 6 described above, it is also possible to omit the first elastic resin layer 5 or the second elastic resin layer 6.

[0079] When the first elastic resin layer 5 is omitted, the first and second wiring layers 10a, 10b, 11a, and 11b may be configured to be arranged in a state where they are covered with an elastic layer (not shown) arranged on the elastic resin substrate 2. The elastic layer can be made of an elastic resin material such as rubber or elastomer that is the same as or different from the elastic resin substrate 2, and can be arranged on the elastic resin substrate 2 so as to cover the first and second wiring layers 10a, 10b, 11a, and 11b.

[0080] Furthermore, the stretchable resin substrate 2 is not necessarily limited to the one having the adhesive property described above, and may be one without adhesive property. In this case, the LED element 3 may be attached to the stretchable resin substrate 2 via the adhesive layer 7.

[0081] Furthermore, the first and second wiring layers 10a, 10b, 11a, 11b may be configured not only to be arranged in a state where they are embedded in the first and second groove portions 16a, 16b, 17a, 17b formed in the above-mentioned stretchable resin substrate 2, but also to be arranged in a state where they are embedded in an insulating layer (not shown) formed on the stretchable resin substrate 2.

[0082] The first and second wiring layers 10a, 10b, 11a, and 11b are not limited to those using the fluid metal material described above, and may be made of, for example, a conductive elastic material obtained by dispersing a conductive filler in an elastic elastomer to provide conductivity. Furthermore, the first and second wiring layers 10a, 10b, 11a, and 11b may be made of a stretchable conductive layer, such as a metal wiring made of gold or the like that is bent in an accordion-like shape.

[0083] As the elastomer, for example, silicone rubber, fluororubber, styrene-butadiene rubber, butadiene rubber (BR), butyl rubber, ethylene-propylene copolymer, nitrile rubber (NBR), chloroprene rubber (CR), chlorosulfonated polyethylene, urethane rubber, acrylic rubber, epichlorohydrin rubber, etc. can be used to impart flexibility.

[0084] Examples of conductive fillers that can be used include carbon nanotubes, metal nanowires, metal nanoparticles, metal nanoflakes, etc. In order to prevent loss of conductivity during expansion and contraction, it is preferable to use wire- or flake-shaped fillers, which can form a network structure during expansion and maintain a conductive path.

[0085] Furthermore, the semiconductor devices 1A and 1B of this embodiment are configured to include LED elements 3 as the semiconductor elements described above, but by arranging TFTs or the like on the stretchable resin substrate 2 and each LED element 3 forming one pixel device, it is possible to realize a stretchable display that can be stretched and contracted, and to form a display that can be deformed into a three-dimensional shape such as a spherical surface or a free-form surface. When configuring a pixel device, it is also possible to use light-emitting elements such as organic electroluminescence (EL) elements instead of the LED elements 3 described above.

[0086] Furthermore, the semiconductor device to which the present invention is applied is not necessarily limited to a configuration having the above-mentioned light-emitting element, and it is also possible to use an electronic device having semiconductor elements such as a light-receiving element, a strain sensor, or a pressure sensor. [Explanation of symbols]

[0087] DESCRIPTION OF SYMBOLS 1A, 1B... Semiconductor device 2... Stretchable resin substrate 3... Semiconductor element (LED element) 4... Protective layer 5... First stretchable resin layer 6... Second stretchable resin layer 7... Adhesion layer 8a, 8b... First connection terminal 9a, 9b... Second connection terminal 10a, 10b... First wiring layer 11a, 11b... Second wiring layer 12... First non-stretchable wiring board 13... Second non-stretchable wiring board 14a... First flexible wiring board (FPC) 14b... Second flexible wiring board (FPC) 15... Anisotropic conductive film (ACF) 16a, 16b... First groove portion 17a, 17b... Second groove portion E... Peripheral area

Claims

1. A stretchable resin substrate that can be stretched freely; a semiconductor element disposed on the stretchable resin substrate; a wiring layer provided in a stretchable manner on a surface of the stretchable resin substrate facing the semiconductor element, The wiring layer is electrically connected to the semiconductor element.

2. the semiconductor element has a connection terminal provided on a surface opposite to a surface facing the stretchable resin substrate, The stretchable semiconductor device according to claim 1 , wherein the wiring layer is electrically connected to the connection terminal.

3. the semiconductor element has a connection terminal provided on a surface facing the stretchable resin substrate, The stretchable semiconductor device according to claim 1 , wherein the wiring layer is electrically connected to the connection terminal.

4. 2. The stretchable semiconductor device according to claim 1, further comprising a protective layer disposed on the surface of the stretchable resin substrate facing the semiconductor element so as to cover the semiconductor element.

5. 2. The stretchable semiconductor device according to claim 1, further comprising a first stretchable resin layer disposed so as to cover the surface of the stretchable resin substrate facing the semiconductor element.

6. The stretchable semiconductor device according to claim 5, characterized in that it comprises a second stretchable resin layer arranged to cover the surface of the stretchable resin substrate opposite to the surface facing the semiconductor element.

7. 2. The stretchable semiconductor device according to claim 1, wherein the wiring layer is formed from a fluid metal material in which metal particles are dispersed in a liquid metal.

8. 2. The stretchable semiconductor device according to claim 1, wherein the wiring layer is disposed in a state of being embedded in the stretchable resin substrate.

9. 2. The stretchable semiconductor device according to claim 1, wherein the wiring layer is disposed in a state of being covered with a stretchable layer disposed on the stretchable resin substrate.

10. an insulating layer provided on a surface of the stretchable resin substrate facing the semiconductor element; 2. The stretchable semiconductor device according to claim 1, wherein the wiring layer is disposed in a state where it is embedded in the insulating layer.

11. The stretchable resin substrate has adhesiveness, 2. The stretchable semiconductor device according to claim 1, wherein the semiconductor element is attached to the stretchable resin substrate by the adhesive force of the stretchable resin substrate.

12. an adhesive layer provided on a surface of the stretchable resin substrate facing the semiconductor element; 2. The semiconductor device having elasticity according to claim 1, wherein the semiconductor element is attached to the elastic resin substrate via the adhesive layer.

13. a plurality of the semiconductor elements are arranged side by side within the surface of the stretchable resin substrate; 2. The semiconductor device having elasticity according to claim 1, wherein the wiring layer is elastically stretchable between adjacent ones of the plurality of semiconductor elements.

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